WorldWideScience

Sample records for highly photoluminescent dots

  1. Photoluminescence under high-electric field of PbS quantum dots

    Directory of Open Access Journals (Sweden)

    B. Ullrich

    2012-12-01

    Full Text Available The effect of a laterally applied electric field (≤10 kV/cm on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.

  2. Tailoring surface groups of carbon quantum dots to improve photoluminescence behaviors

    International Nuclear Information System (INIS)

    Tian, Ruixue; Hu, Shengliang; Wu, Lingling; Chang, Qing; Yang, Jinlong; Liu, Jun

    2014-01-01

    Highlights: • We develop a facile and green method to tailor surface groups. • Photoluminescence behaviors of carbon quantum dots are improved by tailoring their surface groups. • Highly luminescent efficiency is produced by amino-hydrothermal treatment of reduced carbon quantum dots. - Abstract: A facile and green method to tailor surface groups of carbon quantum dots (CQDs) is developed by hydrothermal treatment in an autoclave. The photoluminescence (PL) behaviors of CQDs depend on the types of surface groups. Highly efficient photoluminescence is obtained through amino-hydrothermal treatment of the CQDs reduced by NaBH 4 . The effects of surface groups on PL behavior are attributed to the degrees of energy band bending induced by surface groups

  3. Synthesis of blue photoluminescent WS2 quantum dots via ultrasonic cavitation

    International Nuclear Information System (INIS)

    Bayat, A.; Saievar-Iranizad, E.

    2017-01-01

    Blue photoluminescent WS 2 quantum dots (QDs) were synthesized using a simple top-down method from natural raw mineral tungsten disulfide via tip ultrasonication followed by centrifugation in a water-ethanol (0.7/0.3 ratio) as eco-friendly solvent. Cavitation process at a high power (300 W) led to the breaking of bulk WS 2 flakes to its quantum dots. The as synthesized WS 2 QDs showed blue photoluminescence upon UV excitation. The synthesized WS 2 QDs were analysed by UV–vis and photoluminescence spectrophotometry, transmission electron microscopy, atomic force microscopy and X-ray diffraction. According to the transmission electron microscopy images, the size of WS 2 QDs was obtained as 5 nm in average. - Highlights: •Large scale blue photoluminescent WS 2 quantum dots was synthesized using Ultrasonic probe (Cavitation Process). •A solution of water/ethanol (0.7/0.3) was used as eco-friendly solvent instead of unsuitable solvent such as NMP and ACN. •Edges of bulk WS 2 was increased with formation of its quantum dots. •Solution of WS 2 QDs was stable after 6 months.

  4. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  5. Synthesis of blue photoluminescent WS{sub 2} quantum dots via ultrasonic cavitation

    Energy Technology Data Exchange (ETDEWEB)

    Bayat, A.; Saievar-Iranizad, E., E-mail: saievare@modares.ac.ir

    2017-05-15

    Blue photoluminescent WS{sub 2} quantum dots (QDs) were synthesized using a simple top-down method from natural raw mineral tungsten disulfide via tip ultrasonication followed by centrifugation in a water-ethanol (0.7/0.3 ratio) as eco-friendly solvent. Cavitation process at a high power (300 W) led to the breaking of bulk WS{sub 2} flakes to its quantum dots. The as synthesized WS{sub 2} QDs showed blue photoluminescence upon UV excitation. The synthesized WS{sub 2} QDs were analysed by UV–vis and photoluminescence spectrophotometry, transmission electron microscopy, atomic force microscopy and X-ray diffraction. According to the transmission electron microscopy images, the size of WS{sub 2} QDs was obtained as 5 nm in average. - Highlights: •Large scale blue photoluminescent WS{sub 2} quantum dots was synthesized using Ultrasonic probe (Cavitation Process). •A solution of water/ethanol (0.7/0.3) was used as eco-friendly solvent instead of unsuitable solvent such as NMP and ACN. •Edges of bulk WS{sub 2} was increased with formation of its quantum dots. •Solution of WS{sub 2} QDs was stable after 6 months.

  6. Effect of shells on photoluminescence of aqueous CdTe quantum dots

    International Nuclear Information System (INIS)

    Yuan, Zhimin; Yang, Ping

    2013-01-01

    Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling

  7. Photoluminescence study of carbon dots from ginger and galangal herbs using microwave technique

    Science.gov (United States)

    Isnaeni; Rahmawati, I.; Intan, R.; Zakaria, M.

    2018-03-01

    Carbon dots are new type of fluorescent nanoparticle that can be synthesis easily from natural sources. We have synthesized carbon dots from ginger and galangal herbs using microwave technique and studied their optical properties. We synthesized colloidal carbon dots in water solvent by varying microwave processing time. UV-Vis absorbance, photoluminescence, time-resolved photoluminescence, and transmission electron microscope were utilized to study properties of carbon dots. We found that microwave processing time significantly affect optical properties of synthesized carbon dots. UV-Vis absorbance spectra and time-resolved photoluminescence results show that luminescent of carbon dots is dominated by recombination process from n-π* surface energy level. With further development, these carbon dots are potential for several applications.

  8. Temperature-dependent photoluminescence of water-soluble quantum dots for a bioprobe

    International Nuclear Information System (INIS)

    Liu Tiancai; Huang Zhenli; Wang Haiqiao; Wang Jianhao; Li Xiuqing; Zhao Yuandi; Luo Qingming

    2006-01-01

    The photoluminescence of water-soluble CdSe/ZnS core/shell quantum dots is found to be temperature-dependent: as temperature arising from 280 K to 351 K, the photoluminescence declines with emission peak shifting towards the red at a rate of ∼0.11 nm K -1 . And the studies show that the photoluminescence of water-soluble CdSe/ZnS quantum dots with core capped by a thinner ZnS shell is more sensitive to temperature than that of ones with core capped by a thicker one. That is, with 50% decrement of the quantum yield the temperature of the former need to arise from 280 K to 295 K, while the latter requires much higher temperature (315.6 K), which means that the integrality of shell coverage is a very important factor on temperature-sensitivity to for the photoluminescence of water-soluble CdSe/ZnS quantum dots. Moreover, it is found that the water-soluble CdSe quantum dots with different core sizes, whose cores are capped by thicker ZnS shells, possess almost the same sensitivity to the temperature. All of the studies about photoluminescence temperature-dependence of water-soluble CdSe/ZnS core/shell quantum dots show an indispensable proof for their applications in life science

  9. Temperature-dependent photoluminescence of water-soluble quantum dots for a bioprobe

    Energy Technology Data Exchange (ETDEWEB)

    Liu Tiancai [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Huang Zhenli [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wang Haiqiao [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wang Jianhao [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Li Xiuqing [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Zhao Yuandi [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)]. E-mail: zydi@mail.hust.edu.cn; Luo Qingming [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2006-02-10

    The photoluminescence of water-soluble CdSe/ZnS core/shell quantum dots is found to be temperature-dependent: as temperature arising from 280 K to 351 K, the photoluminescence declines with emission peak shifting towards the red at a rate of {approx}0.11 nm K{sup -1}. And the studies show that the photoluminescence of water-soluble CdSe/ZnS quantum dots with core capped by a thinner ZnS shell is more sensitive to temperature than that of ones with core capped by a thicker one. That is, with 50% decrement of the quantum yield the temperature of the former need to arise from 280 K to 295 K, while the latter requires much higher temperature (315.6 K), which means that the integrality of shell coverage is a very important factor on temperature-sensitivity to for the photoluminescence of water-soluble CdSe/ZnS quantum dots. Moreover, it is found that the water-soluble CdSe quantum dots with different core sizes, whose cores are capped by thicker ZnS shells, possess almost the same sensitivity to the temperature. All of the studies about photoluminescence temperature-dependence of water-soluble CdSe/ZnS core/shell quantum dots show an indispensable proof for their applications in life science.

  10. Comparative photoluminescence study of close-packed and colloidal InP/ZnS quantum dots

    Science.gov (United States)

    Thuy, Ung Thi Dieu; Thuy, Pham Thi; Liem, Nguyen Quang; Li, Liang; Reiss, Peter

    2010-02-01

    This letter reports on the comparative photoluminescence study of InP/ZnS quantum dots in the close-packed solid state and in colloidal solution. The steady-state photoluminescence spectrum of the close-packed InP/ZnS quantum dots peaks at a longer wavelength than that of the colloidal ones. Time-resolved photoluminescence shows that the close-packed quantum dots possess a shorter luminescence decay time and strongly increased spectral shift with the time delayed from the excitation moment in comparison with the colloidal ones. The observed behavior is discussed on the basis of energy transfer enabled by the short interparticle distance between the close-packed quantum dots.

  11. Time-resolved photoluminescence measurements of InP/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Pham Thi Thuy; Ung Thi Dieu Thuy; Tran Thi Kim Chi; Le Quang Phuong; Nguyen Quang Liem [Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Li Liang; Reiss, Peter [CEA Grenoble, DSM/INAC/SPrAM (UMR 5819 CEA-CNRS-Universite Joseph Fourier)/LEMOH, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)], E-mail: liemnq@ims.vast.ac.vn

    2009-09-01

    This paper reports the results on the time-resolved photoluminescence study of InP/ZnS core/shell quantum dots. The ZnS shell played a decisive role to passivate imperfections on the surface of InP quantum dots, consequently giving rise to a strong enhancement of the photoluminescence from the InP core. Under appropriate excitation conditions, not only the emission from the InP core but also that from the ZnS shell was observed. The emission peak in InP core quantum dots varied as a function of quantum dots size, ranging in the 600 - 700 nm region; while the ZnS shell showed emission in the blue region around 470 nm, which is interpreted as resulting from defects in ZnS.

  12. Growth and temperature dependent photoluminescence of InGaAs quantum dot chains

    International Nuclear Information System (INIS)

    Yang, Haeyeon; Kim, Dong-Jun; Colton, John S.; Park, Tyler; Meyer, David; Jones, Aaron M.; Thalman, Scott; Smith, Dallas; Clark, Ken; Brown, Steve

    2014-01-01

    Highlights: • We examine the optical properties of novel quantum dot chains. • Study shows that platelets evolve into quantum dots during heating of the InGaAs platelets encapsulated with GaAs. • Single stack of quantum dots emits light at room temperature. • Quantum dots are of high quality, confirmed by cross-section TEM images and photoluminescence. • Light emission at room temperature weakens beyond the detection limit when the quantum dots form above the critical annealing temperature. - Abstract: We report a study of growth and photoluminescence from a single stack of MBE-grown In 0.4 Ga 0.6 As quantum dot chains. The InGaAs epilayers were grown at a low temperature so that the resulting surfaces remain flat with platelets even though their thicknesses exceed the critical thickness of the conventional Stranski–Krastanov growth mode. The flat InGaAs layers were then annealed at elevated temperatures to induce the formation of quantum dot chains. A reflection high energy electron diffraction study suggests that, when the annealing temperature is at or below 480 °C, the surface of growth front remains flat during the periods of annealing and growth of a 10 nm thick GaAs capping layer. Surprisingly, transmission electron microscopy images do indicate the formation of quantum dot chains, however, so the dot-chains in those samples may form from precursory platelets during the period of temperature ramping and subsequent capping with GaAs due to intermixing of group III elements. The optical emission from the quantum dot layer demonstrates that there is a critical annealing temperature of 480–500 °C above which the properties of the low temperature growth approach are lost, as the optical properties begin to resemble those of quantum dots produced by the conventional Stranski–Krastanov technique

  13. Investigation on photoluminescence quenching of CdSe/ZnS quantum dots by organic charge transporting materials

    Directory of Open Access Journals (Sweden)

    Yuqiu Qu

    2015-12-01

    Full Text Available The effect of different organic charge transporting materials on the photoluminescence of CdSe/ZnS core/shell quantum dots has been studied by means of steady-state and time-resolved photoluminescence spectroscopy. With an increase in concentration of the organic charge transporting material in the quantum dots solutions, the photoluminescence intensity of CdSe/ZnS quantum dots was quenched greatly and the fluorescence lifetime was shortened gradually. The quenching efficiency of CdSe/ZnS core/shell quantum dots decreased with increasing the oxidation potential of organic charge transporting materials. Based on the analysis, two pathways in the photoluminescence quenching process have been defined: static quenching and dynamic quenching. The dynamic quenching is correlated with hole transporting from quantum dots to the charge transporting materials.

  14. Presence of photoluminescent carbon dots in Nescafe® original instant coffee: applications to bioimaging.

    Science.gov (United States)

    Jiang, Chengkun; Wu, Hao; Song, Xiaojie; Ma, Xiaojun; Wang, Jihui; Tan, Mingqian

    2014-09-01

    The presence of the carbon dots (C-dots) in food is a hotly debated topic and our knowledge about the presence and the use of carbon dots (C-dots) in food is still in its infancy. We report the finding of the presence of photoluminescent (PL) C-dots in commercial Nescafe instant coffee. TEM analysis reveals that the extracted C-dots have an average size of 4.4 nm. They were well-dispersed in water and strongly photoluminescent under the excitation of ultra-violet light with a quantum yield (QY) about 5.5%, which were also found to possess clear upconversion PL properties. X-ray photoelectron spectroscopy characterization demonstrates that the C-dots contain C, O and N three elements with the relative contents ca. 30.1, 62.2 and 7.8%. The X-ray diffraction (XRD) analysis indicates that the C-dots are amorphous. Fourier-transform infrared (FTIR) spectra were employed to characterize the surface groups of the C-dots. The C-dots show a pH independent behavior by varying the pH value from 2 to 11. The cytotoxicity study revealed that the C-dots did not cause any toxicity to cells at a concentration as high as 20 mg/mL. The C-dots have been directly applied in cells and fish imaging, which suggested that the C-dots present in commercial coffee may have more potential biological applications. Copyright © 2014. Published by Elsevier B.V.

  15. Dense arrays of ordered pyramidal quantum dots with narrow linewidth photoluminescence spectra

    Energy Technology Data Exchange (ETDEWEB)

    Surrente, A; Gallo, P; Felici, M; Dwir, B; Rudra, A; Kapon, E, E-mail: alessandro.surrente@epfl.c [Laboratory of Physics of Nanostructures, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2009-10-14

    Arrays of site-controlled, pyramidal InGaAs/GaAs quantum dots (QDs) grown by organo-metallic chemical vapour deposition with densities comparable to those of self-assembled QDs (5 x 10{sup 9} cm{sup -2}) are demonstrated. The QDs exhibit high quality photoluminescence spectra with inhomogeneous broadening of only 6.5 meV. The QD dipole moment was estimated through the analysis of time-resolved photoluminescence measurements. Such ordered QD arrays should be useful for applications in active nanophotonic systems such as QD lasers, modulators and switches requiring high overlap of the optical modes with the QD active region.

  16. Photoluminescence Enhancement of Silole-Capped Silicon Quantum Dots Based on Förster Resonance Energy Transfer.

    Science.gov (United States)

    Kim, Seongwoong; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae

    2015-07-01

    Photoluminescent porous silicon were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 650 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon quantum dots in porous silicon. HO-terminated red luminescent PS was obtained by an electrochemical treatment of fresh PS with the current of 150 mA for 60 seconds in water and sodium chloride. As-prepared PS was sonicated, fractured, and centrifuged in toluene solution to obtain photoluminescence silicon quantum dots. Dichlorotetraphenylsilole exhibiting an emission band at 520 nm was reacted with HO-terminated silicon quantum dots to give a silole-capped silicon quantum dots. The optical characterization of silole-derivatized silicon quantum dots was investigated by UV-vis and fluorescence spectrometer. The fluorescence emission efficiency of silole-capped silicon quantum dots was increased by about 2.5 times due to F6rster resonance energy transfer from silole moiety to silicon quantum dots.

  17. Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots

    NARCIS (Netherlands)

    Fomin, V.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Koenraad, P.M.; Wolter, J.H.

    2000-01-01

    We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes.

  18. Solvothermal tuning of photoluminescent graphene quantum dots: from preparation to photoluminescence mechanism

    Science.gov (United States)

    Qi, Bao-Ping; Zhang, Xiaoru; Shang, Bing-Bing; Xiang, Dongshan; Zhang, Shenghui

    2018-02-01

    Solvothermal synthesis was employed to tune the surface states of graphene quantum dots (GQDs). Two series of GQDs with the particle sizes from 2.6 to 4.5 nm were prepared as follows: (I) GQDs with the same size but different oxygen degrees; (II) GQDs with different core sizes but the similar surface chemistry. Both the large sizes and the high surface oxidation degrees led to the redshift photoluminescence (PL) of GQDs. Electrochemiluminescence (ECL) spectra from two series of GQDs were all in accordance with their PL spectra, respectively, which provided good evidence for the conjugated structures in GQDs responsible for PL. [Figure not available: see fulltext.

  19. Power-law photoluminescence decay in quantum dots

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2013-01-01

    Roč. 5, č. 6 (2013), s. 608-610 ISSN 2164-6627 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * indirect gap * photoluminescence * electron-phonon interaction * non-adiabatic Subject RIV: BM - Solid Matter Physics ; Magnetism; JA - Electronics ; Optoelectronics, Electrical Engineering (UMCH-V)

  20. MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

    International Nuclear Information System (INIS)

    Richter, D; Hafenbrak, R; Joens, K D; Schulz, W-M; Eichfelder, M; Rossbach, R; Jetter, M; Michler, P

    2010-01-01

    To achieve a low density of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.

  1. AgCl-doped CdSe quantum dots with near-IR photoluminescence.

    Science.gov (United States)

    Kotin, Pavel Aleksandrovich; Bubenov, Sergey Sergeevich; Mordvinova, Natalia Evgenievna; Dorofeev, Sergey Gennadievich

    2017-01-01

    We report the synthesis of colloidal CdSe quantum dots doped with a novel Ag precursor: AgCl. The addition of AgCl causes dramatic changes in the morphology of synthesized nanocrystals from spherical nanoparticles to tetrapods and finally to large ellipsoidal nanoparticles. Ellipsoidal nanoparticles possess an intensive near-IR photoluminescence ranging up to 0.9 eV (ca. 1400 nm). In this article, we explain the reasons for the formation of the ellipsoidal nanoparticles as well as the peculiarities of the process. The structure, Ag content, and optical properties of quantum dots are also investigated. The optimal conditions for maximizing both the reaction yield and IR photoluminescence quantum yield are found.

  2. Using quantum dot photoluminescence for load detection

    Science.gov (United States)

    Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-01

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  3. Using quantum dot photoluminescence for load detection

    Directory of Open Access Journals (Sweden)

    M. Moebius

    2016-08-01

    Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  4. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    Energy Technology Data Exchange (ETDEWEB)

    Ananthakumar, S. [Crystal Growth Centre, Anna University, Chennai 600025 (India); Jayabalan, J., E-mail: jjaya@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Singh, Asha; Khan, Salahuddin [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Babu, S. Moorthy [Crystal Growth Centre, Anna University, Chennai 600025 (India); Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2016-01-15

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a 'UCPL bright point' in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  5. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    International Nuclear Information System (INIS)

    Ananthakumar, S.; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Babu, S. Moorthy; Chari, Rama

    2016-01-01

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a "UCPL bright point" in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  6. Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots

    Czech Academy of Sciences Publication Activity Database

    Neudert, K.; Trojánek, F.; Kuldová, Karla; Oswald, Jiří; Hospodková, Alice; Malý, P.

    2009-01-01

    Roč. 6, č. 4 (2009), 853-856 ISSN 1862-6351 R&D Projects: GA ČR GA202/06/0718 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * photoluminescence * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism

  7. Highly photoluminescent MoO{sub x} quantum dots: Facile synthesis and application in off-on Pi sensing in lake water samples

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Sai Jin [Jiangxi Key Laboratory of Mass Spectrometry and Instrumentation, East China University of Technology (ECUT), Nanchang 330013 (China); School of Chemistry, Biology and Material Science, ECUT, Nanchang 330013 (China); Zhao, Xiao Jing; Zuo, Jun [School of Chemistry, Biology and Material Science, ECUT, Nanchang 330013 (China); Huang, Hai Qing [State Key Laboratory Breeding Base of Nuclear Resources and Environment, ECUT, Nanchang 330013 (China); Zhang, Li, E-mail: zhangli8@ncu.edu.cn [College of Chemistry, Nanchang University, Nanchang 330031 (China)

    2016-02-04

    Molybdenum oxide (MoO{sub x}) is a well-studied transition-metal semiconductor material, and has a wider band gap than MoS{sub 2} which makes it become a promising versatile probe in a variety of fields, such as gas sensor, catalysis, energy storage ect. However, few MoO{sub x} nanomaterials possessing photoluminescence have been reported until now, not to mention the application as photoluminescent probes. Herein, a one-pot method is developed for facile synthesis of highly photoluminescent MoO{sub x} quantum dots (MoO{sub x} QDs) in which commercial molybdenum disulfide powder and hydrogen peroxide (H{sub 2}O{sub 2}) are involved as the precursor and oxidant, respectively. Compared with current synthesis methods, the proposed one has the advantages of rapid, one-pot, easily prepared, environment friendly as well as strong photoluminescence. The obtained MoO{sub x} QDs is further utilized as an efficient photoluminescent probe, and a new off-on sensor has been constructed for phosphate (Pi) determination in complicated lake water samples, attributed to the fact that the binding affinity of Eu{sup 3+} ions to the oxygen atoms from Pi is much higher than that from the surface of MoO{sub x} QDs. Under the optimal conditions, a good linear relationship was found between the enhanced photoluminescence intensity and Pi concentration in the range of 0.1–160.0 μM with the detection limit of 56 nM (3σ/k). The first application of the photoluminescent MoO{sub x} nanomaterials for ion photochemical sensing will open the gate of employing MoO{sub x} nanomaterials as versatile probes in a variety of fields, such as chemi-/bio-sensor, cell imaging, biomedical and so on. - Highlights: • Though increasing effort has been devoted to MoO{sub x} nanomaterials synthesis, only a few reports mentioning its photoluminescence property are available, while even no evidence has shown its applications in chemical and biological sensing. • Herein, a one-pot method possessing the

  8. Photoluminescence of carbon dots from mesoporous silica

    Science.gov (United States)

    Nelson, D. K.; Razbirin, B. S.; Starukhin, A. N.; Eurov, D. A.; Kurdyukov, D. A.; Stovpiaga, E. Yu; Golubev, V. G.

    2016-09-01

    Photophysical properties of carbon dots were investigated under various excitation conditions and over a wide temperature region - from room to liquid helium temperatures. The carbon dots (CDs) were synthesized using mesoporous silica particles as a reactor and (3-aminopropyl)triethoxysilane (APTES) as a precursor. The photoluminescence spectra of CDs exhibit a strong dependence on the excitation wavelength and demonstrate a significant inhomogeneous broadening. Lowering sample temperature reveals the doublet structure of the spectra, which is associated with the vibronic structure of radiative transitions. The vibration energy ∼1200 cm-1 is close to the energy of Csbnd O stretching vibration. Long-lived phosphorescence of carbon dots with its decay time ∼0.2 s at T = 80 K was observed. The fluorescence and phosphorescence spectra are shown to be spectrally separated. The long-lived component of the emission was ascribed to optically forbidden triplet-singlet transitions. The value of the singlet-triplet splitting was found to be about 0.3 eV. Photo-induced polarization of the luminescence of carbon dots was revealed. The degree of the linear polarization is dependent on the wavelengths of both excitation and emitted light. The effect indicates a hidden anisotropy of optical dipole transitions in the dots and demonstrates the loss of the dipole orientation during the electron energy relaxation.

  9. Detection of CdSe quantum dot photoluminescence for security label on paper

    Energy Technology Data Exchange (ETDEWEB)

    Isnaeni,, E-mail: isnaeni@lipi.go.id; Sugiarto, Iyon Titok [Research Center for Physics, Indonesian Institute of Science, Building 442 Puspiptek Serpong, South Tangerang, Banten, Indonesia 15314 (Indonesia); Bilqis, Ratu; Suseno, Jatmiko Endro [Department of Physics, Diponegoro University, Jl. Prof. Soedarto, Tembalang, Semarang, Indonesia 50275 (Indonesia)

    2016-02-08

    CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program to reveal quantum dot pattern stamp having the word ’RAHASIA’. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.

  10. Highly photoluminescent and photostable CdSe quantum dot-nylon hybrid composites for efficient light conversion applications

    Energy Technology Data Exchange (ETDEWEB)

    Yuan Ying; Riehle, Frank-Stefan [Freiburg Materials Research Centre (FMF), University of Freiburg, Stefan-Meier-Str. 21, D-79104 Freiburg (Germany); Department of Microsystems Engineering (IMTEK), Georg Koehler Allee 103, University of Freiburg, D-79110 Freiburg (Germany); Nitschke, Roland [Life Imaging Center, Centre of Systems Biology, University of Freiburg Habsburgerstr. 49, D-79104 Freiburg (Germany); Centre for Biological Signalling Studies (BIOSS), University of Freiburg (Germany); Krueger, Michael, E-mail: michael.krueger@fmf.uni-freiburg.de [Freiburg Materials Research Centre (FMF), University of Freiburg, Stefan-Meier-Str. 21, D-79104 Freiburg (Germany); Department of Microsystems Engineering (IMTEK), Georg Koehler Allee 103, University of Freiburg, D-79110 Freiburg (Germany)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer A novel in situ synthesis approach for highly luminescent CdSe core QDs-nylon hybrid materials. Black-Right-Pointing-Pointer Potential applications for light and energy conversion are demonstrated. Black-Right-Pointing-Pointer Three dimensional structures out of this hybrid material are available. - Abstract: Highly photoluminescent hexadecylamine (HDA) capped core CdSe quantum dots (QDs) with fluorescent quantum yields (QYs) up to 60% were synthesized using a hot injection method and directly incorporated into nylon polymer. For the incorporation of crude CdSe QDs into nylon a simple reproducible and upscalable one pot approach was developed without the need of further purification steps. The photoluminescence (PL) properties of the core QDs and the resulting QD-polymer hybrid composites were investigated and compared. Red emitting hybrid materials exhibit a QY of 60% with a high potential for applications in direct light and energy conversion. The hybrid materials could be successfully utilized as LED conversion layers. By avoiding exposure to oxygen the hybrid films can be kept for a month without detecting a significant decrease in luminescence. Various three dimensional structures are easily available opening doors for further applications such as novel materials for fluorescence standard development in laser scanning microscopy (LSM).

  11. Quantum dots with indirect band gap: power-law photoluminescence decay

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2014-01-01

    Roč. 11, č. 5 (2014), s. 507-512 ISSN 1708-5284 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : photoluminescence * quantum dots * electron-phonon interaction * inter-valley deformation potential interaction * power-law decay Subject RIV: BM - Solid Matter Physics ; Magnetism

  12. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    Science.gov (United States)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Hatami, F.; Masselink, W. T.; Zhang, H.; Casalboni, M.

    2016-03-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N2) and in solvent vapours of methanol, clorophorm, acetone and water were measured. The presence of vapors of clorophorm, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed.

  13. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    International Nuclear Information System (INIS)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Casalboni, M.; Hatami, F.; Masselink, W.T.; Zhang, H.

    2016-01-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N 2 ) and in solvent vapours of methanol, chloroform, acetone and water were measured. The presence of vapors of chloroform, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed. (paper)

  14. Tuning the Photoluminescence of Graphene Quantum Dots by Photochemical Doping with Nitrogen

    Directory of Open Access Journals (Sweden)

    Xiaofen Xu

    2017-11-01

    Full Text Available Nitrogen-doped graphene quantum dots (NGQDs were synthesized by irradiating graphene quantum dots (GQDs in an NH3 atmosphere. The photoluminescence (PL properties of the GQDs and the NGQDs samples were investigated. Compared with GQDs, a clear PL blue-shift of NGQDs could be achieved by regulating the irradiating time. The NGQDs obtained by irradiation of GQDs for 70 min had a high N content of 15.34 at % and a PL blue-shift of about 47 nm. This may be due to the fact that photochemical doping of GQDs with nitrogen can significantly enhance the contents of pyridine-like nitrogen, and also effectively decrease the contents of oxygen functional groups of NGQDs, thus leading to the observed obvious PL blue-shift.

  15. Different approaches for sensing captopril based on functionalized graphene quantum dots as photoluminescent probe

    Energy Technology Data Exchange (ETDEWEB)

    Toloza, Carlos A.T.; Khan, Sarzamin; Silva, Renan L.D. [Department of Chemistry, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil); Romani, Eric C.; Freire, F.L. [Department of Physics, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil); Aucélio, Ricardo Q., E-mail: aucelior@puc-rio.br [Department of Chemistry, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil)

    2016-11-15

    The determination of captopril is proposed using graphene quantum dots produced by the pyrolysis of citric acid and glutathione (GSH-GQDs). Captopril induces both quenching and spectral red-shifting in the photoluminescence from aqueous dispersions of GSH-GQDs. By employing Fe{sup 3+} as mediator (that enables signal quenching of GSH-GQDs), the presence of captopril restored the photoluminescence of quantum dots. Under optimized experimental conditions, the signal quenching from the GSH-GQDs as function of the concentration of captopril showed a linear response range covering three orders of magnitude (10{sup −6} to 10{sup −4} mol L{sup −1}). The proposed approaches were tested by determining captopril in simulated samples and in commercial pharmaceutical formulations. The measurement of either the spectral shifting observed of the GSH-GQDs probe or the photoluminescence switch on/off using GQDs-GSH-Fe{sup 3+} resulted in satisfactory recoveries of captopril, showing the quantitative sensing potential.

  16. Power-law photoluminescence decay in indirect gap quantum dots

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Král, Karel

    2013-01-01

    Roč. 111, November (2013), s. 170-174 ISSN 0167-9317 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12186; GA MŠk LH12236; GA ČR(CZ) GAP205/10/2280 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : quantum dots * indirect gap transition * power-law photoluminescence decay Subject RIV: BM - Solid Matter Physics ; Magnetism; BE - Theoretical Physics (FZU-D) Impact factor: 1.338, year: 2013

  17. Hydrothermal synthesis of two photoluminescent nitrogen-doped graphene quantum dots emitted green and khaki luminescence

    International Nuclear Information System (INIS)

    Zhu, Xiaohua; Zuo, Xiaoxi; Hu, Ruiping; Xiao, Xin; Liang, Yong; Nan, Junmin

    2014-01-01

    A simple and effective chemical synthesis of the photoluminescent nitrogen-doped graphene quantum dots (N-GQDs) biomaterial is reported. Using the hydrothermal treatment of graphene oxide (GO) in the presence of hydrogen peroxide (H 2 O 2 ) and ammonia, the N-GQDs are synthesized through H 2 O 2 exfoliating the GO into nanocrystals with lateral dimensions and ammonia passivating the generated active surface. Then, after a dialytic separation, two water-soluble N-GQDs with average size of about 2.1 nm/6.2 nm, which emit green/khaki luminescence and exhibit excitation dependent/independent photoluminescence (PL) behaviors, are obtained. In addition, it is also demonstrated that these two N-GQDs are stable over a broad pH range and have the upconversion PL property, showing this approach provides a simple and effective method to synthesize the functional N-GQDs. - Highlights: • Nitrogen-doped graphene quantum dots (N-GQDs) are prepared by hydrothermal routine. • Two N-GQDs with different size distribution emit green/khaki photoluminescence. • Two N-GQDs exhibit excitation-dependent/independent photoluminescence behaviors

  18. Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots

    Science.gov (United States)

    Maliya; Aierken, Abuduwayiti; Li, Yudong; Zhou, Dong; Zhao, Xiaofan; Guo, Qi; Liu, Chaoming

    2018-03-01

    We investigate the effects of 1.0MeV electron beam irradiation on the photoluminescence of self-assembled InAs/GaAs quantum dots. After irradiation doses up to 1×1016e-/cm2 , photoluminescence of all samples was degraded dramatically and some additional radiation-induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low electron doses under different photo-injection condition in two samples, are also noticed. Different energy shift was observed in two samples with different Quantum Dot sizes. We attribute this remarkable phenomenon to combination of stress relaxation induced red-shift and In-Ga intermixing caused blue-shift.

  19. One-step, green, and economic synthesis of water-soluble photoluminescent carbon dots by hydrothermal treatment of wheat straw, and their bio-applications in labeling, imaging, and sensing

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Ming; Zhong, Ruibo; Gao, Haiyang; Li, Wanrong; Yun, Xiaoling; Liu, Jingran; Zhao, Xinmin; Zhao, Guofen; Zhang, Feng, E-mail: fengzhang1978@hotmail.com

    2015-11-15

    Graphical abstract: Water-soluble photoluminescent carbon dots can be synthesized simply by a green, economic and one-pot hydrothermal treatment of wheat straw with ∼20% yield, in addition to the compact size and robust photostability they are experimentally demonstrated for multiplexed applications such as sensing ions and labeling and imaging for inorganic nanostructures, cells and even nematodes. The converting biomass wastes to promising biocompatible nanomaterials could be a “one-stone-two-birds” strategy to other carbon-containing biomass waste for a highly effectively carbon recycling use and sustainable energy and environment future. - Highlights: • Photoluminescent carbon dots can be synthesized by wheat straw with about 20% yield. • Carbon dots can be used for both nonliving and living labeling, imaging, and sensing. • Carbon dots can be used as a fluorescent ink. - Abstract: The use of biomass as renewable and sustainable energy source has attracted the attention of politics and research and development (R&D) facilities around the world. Agricultural straw acts as a typical biowaste, which still needs highly effective recycling to save the biomass urgently at present. Photoluminescent carbon dots (C-dots) are novel biocompatible nanomaterials that have been proved to be produced from many carbon-abundant materials and hold great promise for the modern nanobiomedicine. In order to realize a “one-stone-two-birds” strategy, we report a green, economic, one-pot method in this article for synthesizing photoluminescent C-dots by hydrothermal treatment of wheat straw. Using X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), we show that the as-prepared C-dots are amorphous in structure and are mainly composed of carbon. Their tiny size (<2 nm), combined with the characteristic excitation-dependent relatively bright emission, and robust photostability made the C-dots a potential biocompatible nanomaterial for bio-applications. We

  20. Dewetting-Induced Photoluminescent Enhancement of Poly(lauryl methacrylate)/Quantum Dot Thin Films.

    Science.gov (United States)

    Geldmeier, Jeffrey; Rile, Lexy; Yoon, Young Jun; Jung, Jaehan; Lin, Zhiqun; Tsukruk, Vladimir V

    2017-12-19

    A new method for enhancing photoluminescence from quantum dot (QD)/polymer nanocomposite films is proposed. Poly(lauryl methacrylate) (PLMA) thin films containing embedded QDs are intentionally allowed to undergo dewetting on substrates by exposure to a nonsolvent vapor. After controlled dewetting, films exhibited typical dewetting morphologies with increased amounts of scattering that served to outcouple photoluminescence from the film and reduce internal light propagation within the film. Up to a 5-fold enhancement of the film emission was achieved depending on material factors such as the initial film thickness and QD concentration within the film. An increase in initial film thickness was shown to increase the dewetted maximum feature size and its characteristic length until a critical thickness was reached where dewetting became inhibited. A unique light exposure-based photopatterning method is also presented for the creation of high contrast emissive patterns as guided by spatially controlled dewetting.

  1. Self-assembly and photoluminescence evolution of hydrophilic and hydrophobic quantum dots in sol–gel processes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ping, E-mail: mse_yangp@ujn.edu.cn [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China); Matras-Postolek, Katarzyna [Faculty of Chemical Engineering and Technology, Cracow University of Technology, Krakow 31-155 (Poland); Song, Xueling; Zheng, Yan; Liu, Yumeng; Ding, Kun; Nie, Shijie [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China)

    2015-10-15

    Graphical abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were assembled into various morphologies including chain, hollow spheres, fibers, and ring structures through sol–gel processes. The PL properties during assembly as investigated. - Highlights: • Highly luminescent quantum dots (QDs) were synthesized from several ligands. • The evolution of PL in self-assembly via sol–gel processes was investigated. • CdTe QDs were assembled into a chain by controlling hydrolysis and condensation reactions. • Hollow spheres, fibers, and ring structures were created via CdSe/ZnS QDs in sol–gel processes. - Abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were synthesized from several ligands to investigate the PL evolution in QD self-assembly via sol–gel processes. After ligand exchange, CdTe QDs were assembled into a chain by controlling the hydrolysis and condensation reaction of 3-mercaptopropyl-trimethoxysilane. The chain was then coated with a SiO{sub 2} shell from tetraethyl orthosilicate (TEOS). Hollow spheres, fibers, and ring structures were created from CdSe/ZnS QDs via various sol–gel processes. CdTe QDs revealed red-shifted and narrowed PL spectrum after assembly compared with their initial one. In contrast, the red-shift of PL spectra of CdSe/ZnS QDs is small. By optimizing experimental conditions, SiO{sub 2} spheres with multiple CdSe/ZnS QDs were fabricated using TEOS and MPS. The QDs in these SiO{sub 2} spheres retained their initial PL properties. This result is useful for application because of their high stability and high PL efficiency of 33%.

  2. Magnetic enhancement of photoluminescence from blue-luminescent graphene quantum dots

    Science.gov (United States)

    Chen, Qi; Shi, Chentian; Zhang, Chunfeng; Pu, Songyang; Wang, Rui; Wu, Xuewei; Wang, Xiaoyong; Xue, Fei; Pan, Dengyu; Xiao, Min

    2016-02-01

    Graphene quantum-dots (GQDs) have been predicted and demonstrated with fascinating optical and magnetic properties. However, the magnetic effect on the optical properties remains experimentally unexplored. Here, we conduct a magneto-photoluminescence study on the blue-luminescence GQDs at cryogenic temperatures with magnetic field up to 10 T. When the magnetic field is applied, a remarkable enhancement of photoluminescence emission has been observed together with an insignificant change in circular polarization. The results have been well explained by the scenario of magnetic-field-controlled singlet-triplet mixing in GQDs owing to the Zeeman splitting of triplet states, which is further verified by temperature-dependent experiments. This work uncovers the pivotal role of intersystem crossing in GQDs, which is instrumental for their potential applications such as light-emitting diodes, photodynamic therapy, and spintronic devices.

  3. Temperature-dependent photoluminescence study of InP/ZnS quantum dots

    Science.gov (United States)

    Thuy Pham, Thi; Tran, Thi Kim Chi; Liem Nguyen, Quang

    2011-06-01

    This paper reports on the temperature-dependent photoluminescence of InP/ZnS quantum dots under 532 nm excitation, which is above the InP transition energy but well below that of ZnS. The overall photoluminescence spectra show two spectral components. The higher-energy one (named X) is assigned to originate from the excitonic transition; while the low-energy spectral component (named I) is normally interpreted as resulting from lattice imperfections in the crystalline structure of InP/ZnS quantum dots (QDs). Peak positions of both the X and I emissions vary similarly with increasing temperature and the same as the InP bandgap narrowing with temperature. In the temperature range from 15 to 80 K, the ratio of the integrated intensity from the X and the I emissions decreases gradually and then this ratio increases fast at temperatures higher than 80 K. This could result from a population of charge carriers in the lattice imperfection states at a temperature below 80 K to increase the I emission but then with these charge carriers being released to contribute to the X emission.

  4. Spectroscopic characteristics of carbon dots (C-dots) derived from carbon fibers and conversion to sulfur-bridged C-dots nanosheets.

    Science.gov (United States)

    Vinci, John C; Ferrer, Ivonne M; Guterry, Nathan W; Colón, Verónica M; Destino, Joel F; Bright, Frank V; Colón, Luis A

    2015-09-01

    We synthesized sub-10 nm carbon nanoparticles (CNPs) consistent with photoluminescent carbon dots (C-dots) from carbon fiber starting material. The production of different C-dots fractions was monitored over seven days. During the course of the reaction, one fraction of C-dots species with relatively high photoluminescence was short-lived, emerging during the first hour of reaction but disappearing after one day of reaction. Isolation of this species during the first hour of the reaction was crucial to obtaining higher-luminescent C-dots species. When the reaction proceeded for one week, the appearance of larger nanostructures was observed over time, with lateral dimensions approaching 200 nm. The experimental evidence suggests that these larger species are formed from small C-dot nanoparticles bridged together by sulfur-based moieties between the C-dot edge groups, as if the C-dots polymerized by cross-linking the edge groups through sulfur bridges. Their size can be tailored by controlling the reaction time. Our results highlight the variety of CNP products, from sub-10 nm C-dots to ~200 nm sulfur-containing carbon nanostructures, that can be produced over time during the oxidation reaction of the graphenic starting material. Our work provides a clear understanding of when to stop the oxidation reaction during the top-down production of C-dots to obtain highly photoluminescent species or a target average particle size.

  5. Photoluminescence of a single InAs/AlAs quantum dot

    International Nuclear Information System (INIS)

    Shamirzaev, T.S.; Zhuravlev, K.S.; Larsson, M.; Holtz, P.O.

    2008-01-01

    Micro-photoluminescence (μ-PL) of a simple InAs/AlAs quantum dot (QD) has been studied. It has been found that the μ-PL emission related to the recombination in a single QD is strongly broadened probably due to spectral diffusion. Emissions related to the recombination of biexcitons and excitons occupying excited levels of the QD are observed in μ-PL spectra at high excitation power densities. A red shift of the μ-PL emissions related to recombination of excitons in the ground and excited levels of the QD with increasing excitation power gives clear evidence for type I alignment of the InAs/AlAs QD. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Photoluminescence intermittency of semiconductor quantum dots in dielectric environments

    Energy Technology Data Exchange (ETDEWEB)

    Isaac, A.

    2006-08-11

    The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)

  7. Simple and greener synthesis of highly photoluminescence Mn{sup 2+}-doped ZnS quantum dots and its surface passivation mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yongbo; Liang, Xuhua; Ma, Xuan; Hu, Yahong [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Hu, Xiaoyun; Li, Xinghua [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Fan, Jun, E-mail: fanjun@nwu.edu.cn [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China)

    2014-10-15

    Graphical abstract: TEM and HRTEM (inset) images of the as-prepared Mn{sup 2+}-doped ZnS QDs and the passivation mechanism model of GSH-capped ZnS QDs (b). - Highlights: • Highly photoluminescent Mn{sup 2+}-doped ZnS quantum dots were synthesized by a simple synthetic method. • The effects of Mn{sup 2+} doping concentration, reaction time and temperature on PL intensity were investigated. • The mechanism of surface passivation was described. - Abstract: In this paper, we reported a simple synthetic method of highly photoluminescent (PL) and stable Mn{sup 2+}-doped ZnS quantum dots (QDs) with glutathione (GSH) as the capping molecule and focused on mechanism of the surface passivation of QDs. The Mn{sup 2+}-doped ZnS QDs that was synthesized in basic solution (pH 10) at 120 °C for 5 h exhibited blue trap-state emission around 418 nm and a strong orange-red emission at about 580 nm with an excitation wavelength of 330 nm. The optimum doping concentration is determined to be 1.5 at.%, and the present Mn{sup 2+}-doped ZnS QDs synthesized under the optimal reaction condition exhibited a quantum yield of 48%. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that the Mn{sup 2+}-doped ZnS QDs were 3–5 nm in size with a zinc blend structure. More importantly, the PL intensity and chemical stability can be improved using organic ligand modification strategies, it was found that GSH could passivate surface defects very efficiently by comparing and analyzing the results of the different organic ligands modification. The cadmium-free Mn{sup 2+}-doped ZnS QDs well-passivated with GSH as capping molecule acquired the advantages of strong PL and excellent chemical stability, which are important to QD applications.

  8. Plasmon resonance-induced photoluminescence enhancement of CdTe/Cds quantum dots thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hongyu [Nanjing University of Posts and Telecommunications, Nanjing 210003 (China); National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Wu, Yangqing; Xu, Jun; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2016-11-30

    Highlights: • CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated. • PL intensity of the quantum dots films was enhanced due to Au nanorods. • Internal quantum efficiency increased due to localized surface plasmon resonance. • The lifetimes of quantum dots films decreased after interaction with Au nano-rods. - Abstract: CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated on planar Si substrates. The optical properties of all samples were investigated and the corresponding simulations were studied. It was found that the photoluminescence intensity of the CdTe/CdS quantum dots films was enhanced about 9-fold after the incorporation of Au nano-rods, the internal quantum efficiency increased from 24.3% to 35.2% due to the localized surface plasmon resonance. The time-resolved luminescence decay curves showed that the lifetimes of CdTe/CdS quantum dots films decreased to 2.8 ns after interaction with Au nano-rods. The results of finite-difference time-domain simulation indicated that Au nano-rods induced the localization of electric field, which enhanced the PL intensity of quantum dots films in the vicinity of Au nano-rods.

  9. Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Kashtiban, R J; Bangert, U; Harvey, A J; Sherliker, B; Halsall, M P

    2010-01-01

    InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation.

  10. Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2002-01-01

    The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

  11. Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Takabayashi, K.; Kamiya, I. [Quantum Interface Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan); Sukrittanon, S. [Material Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Pan, J. L.; Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-10-27

    Self-assembled dilute nitride InNP quantum dots (QDs) in GaP matrix grown under the Stranski-Krastanov mode by gas-source molecular beam epitaxy are studied. The N-related localized states inside the InNP QDs provide a spatially direct recombination channel, in contrast to the spatially indirect channel through the strained In(N)P QDs/GaP interface states. The N incorporation into InP QDs therefore causes a blueshift and double-peak features in photoluminescence, which are not observed in other dilute nitride materials.

  12. Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

    International Nuclear Information System (INIS)

    Isnaeni,; Yulianto, Nursidik; Suliyanti, Maria Margaretha

    2016-01-01

    We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

  13. Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

    Energy Technology Data Exchange (ETDEWEB)

    Isnaeni,, E-mail: isnaeni@lipi.go.id; Yulianto, Nursidik; Suliyanti, Maria Margaretha [Research Center for Physics, Indonesian Institute of Sciences, Building 442, Kawasan Puspiptek, South Tangerang,Banten 15314 Indonesia (Indonesia)

    2016-03-11

    We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

  14. Hydrothermal green synthesis of magnetic Fe3O4-carbon dots by lemon and grape fruit extracts and as a photoluminescence sensor for detecting of E. coli bacteria.

    Science.gov (United States)

    Ahmadian-Fard-Fini, Shahla; Salavati-Niasari, Masoud; Ghanbari, Davood

    2018-10-05

    The aim of this work is preparing of a photoluminescence nanostructures for rapid detection of bacterial pathogens. Firstly, carbon dots (CDs) were synthesized by grape fruit, lemon, turmeric extracts and hydrothermal method. Then Fe 3 O 4 (magnetite) nanoparticles was achieved using these bio-compatible capping agents. Finally, magnetite-carbon dots were synthesized as a novel magnetic and photoluminescence nanocomposite. X-ray diffraction (XRD) confirms the crystallinity and phase of the products, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) investigate the morphology, shape and size of the magnetite, carbon dot and nanocomposites. Fourier transform infrared (FT-IR) spectroscopy shows the purity of the nanostructures. Ultraviolet-visible (UV-Vis) absorption and photo-luminescence (PL) spectroscopy show suitable photo-luminescence under ultraviolet irradiation. Vibrating sample magnetometer (VSM) shows super paramagnetic property of the product. Interestingly carbon dots were used as a non-toxic photoluminescence sensor for detecting of Escherichia coli (E. coli) bacteria. Results show quenching of photoluminescence of the CDs nanocomposite by increasing amount of E. coli bacteria. Copyright © 2018 Elsevier B.V. All rights reserved.

  15. Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot

    Science.gov (United States)

    Ware, M. E.; Stinaff, E. A.; Gammon, D.; Doty, M. F.; Bracker, A. S.; Gershoni, D.; Korenev, V. L.; Bădescu, Ş. C.; Lyanda-Geller, Y.; Reinecke, T. L.

    2005-10-01

    We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge-tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wave functions through asymmetric e-e and e-h exchange interactions.

  16. Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Zhitao [Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Banishev, Alexandr A.; Christensen, James; Dlott, Dana D. [School of Chemical Sciences and Fredrick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N., E-mail: naresh.thadhani@mse.gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Xiao, Pan [LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); Zhou, Min [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States)

    2016-07-28

    The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

  17. Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

    International Nuclear Information System (INIS)

    Kang, Zhitao; Banishev, Alexandr A.; Christensen, James; Dlott, Dana D.; Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N.; Xiao, Pan; Zhou, Min

    2016-01-01

    The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

  18. Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

    Energy Technology Data Exchange (ETDEWEB)

    Alejo, T. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Paulo, Pedro M.R. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Merchán, M.D. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Garcia-Fernandez, Emilio; Costa, Sílvia M.B. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Velázquez, M.M., E-mail: mvsal@usal.es [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain)

    2017-03-15

    Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

  19. Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

    International Nuclear Information System (INIS)

    Alejo, T.; Paulo, Pedro M.R.; Merchán, M.D.; Garcia-Fernandez, Emilio; Costa, Sílvia M.B.; Velázquez, M.M.

    2017-01-01

    Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

  20. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...

  1. Chemically modulated graphene quantum dot for tuning the photoluminescence as novel sensory probe

    Science.gov (United States)

    Hwang, Eunhee; Hwang, Hee Min; Shin, Yonghun; Yoon, Yeoheung; Lee, Hanleem; Yang, Junghee; Bak, Sora; Lee, Hyoyoung

    2016-12-01

    A band gap tuning of environmental-friendly graphene quantum dot (GQD) becomes a keen interest for novel applications such as photoluminescence (PL) sensor. Here, for tuning the band gap of GQD, a hexafluorohydroxypropanyl benzene (HFHPB) group acted as a receptor of a chemical warfare agent was chemically attached on the GQD via the diazonium coupling reaction of HFHPB diazonium salt, providing new HFHPB-GQD material. With a help of the electron withdrawing HFHPB group, the energy band gap of the HFHPB-GQD was widened and its PL decay life time decreased. As designed, after addition of dimethyl methyl phosphonate (DMMP), the PL intensity of HFHPB-GQD sensor sharply increased up to approximately 200% through a hydrogen bond with DMMP. The fast response and short recovery time was proven by quartz crystal microbalance (QCM) analysis. This HFHPB-GQD sensor shows highly sensitive to DMMP in comparison with GQD sensor without HFHPB and graphene. In addition, the HFHPB-GQD sensor showed high selectivity only to the phosphonate functional group among many other analytes and also stable enough for real device applications. Thus, the tuning of the band gap of the photoluminescent GQDs may open up new promising strategies for the molecular detection of target substrates.

  2. Quantification of thyroxine by the selective photoluminescence quenching of L-cysteine–ZnS quantum dots in aqueous solution containing hexadecyltrimethylammonium bromide

    International Nuclear Information System (INIS)

    Khan, Sarzamin; Carneiro, Leonardo S.A.; Romani, Eric C.; Larrudé, Dunieskys G.; Aucelio, Ricardo Q.

    2014-01-01

    The determination of L-thyroxine is proposed based on the photoluminescence quenching effect caused on the L-cysteine modified ZnS quantum dots (L-cysteine ZnS QDs) aqueous dispersion. Under optimum conditions, the analytical response followed a Stern–Volmer model and the experimental conditions were adjusted to enable a robust and reproducible photoluminescence signal. The linear response observed in the quantum dots aqueous dispersion covered the L-thyroxine concentration from the LOQ (2.0×10 −8 mol L −1 ) to 4.0×10 −6 mol L −1 . The approach was tested in the determination of L-thyroxine in pharmaceutical formulations used to treat patients with thyroid gland disorder. The percent recoveries in controlled samples were between 93.3 and 103%. Analyte fortified saliva was also evaluated as a possible sample for L-thyroxine monitoring of a patient under treatment. It was identified a static type of photoluminescence quenching caused by L-thyroxine. - Highlights: • L-cysteine ZnS QDs were used as a photoluminescent probe to detect L-thyroxine. • Intensity of probe decreases following a Stern–Volmer model. • The method can detect down ng L −1 levels of L-thyroxine in the probe dispersion. • Method was used to determinate of L-thyroxine in saliva and in pharmaceuticals. • Mechanism of interaction between L-thyroxine and quantum dots was studied

  3. Green and fast synthesis of amino-functionalized graphene quantum dots with deep blue photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Blanco, E., E-mail: eduardo.blanco@uca.es; Blanco, G.; Gonzalez-Leal, J. M.; Barrera, M. C.; Domínguez, M.; Ramirez-del-Solar, M. [University of Cádiz, Institute of Electron Microscopy and Materials (Spain)

    2015-05-15

    Graphene quantum dots (GQDs) were prepared using a top-down approach with a green microwave-assisted hydrothermal synthesis from ultrathin graphite, previously ultrasound delaminated. Results obtained by transmission electron microscopy and atomic force microscopy indicate that the so-fabricated GQDs are plates with 6 nm of average diameter, mostly single- or bi-layered. Photoluminescence characterization shows that the strongest emission occurs at 410–415 nm wavelength when the samples are excited at 310–320 nm wavelength. In addition to these down-conversion features, GQDs also exhibit up-conversion photoluminescence when excited in the range 560–800 nm wavelength, with broad emission peaks at 410–450 nm wavelength. Analysis of X-ray photoelectron spectroscopy measurements indicates a higher proportion of C–C sp{sup 2} than sp{sup 3} bonds, with the sp{sup 3} ones mainly located at the GQD surfaces. Also evidences of C–O and C–N bonds at the GQD surface have been observed. The combination of these results with Raman and ultraviolet–visible absorption experiments allows envisaging the GQDs to be composed of amino-functionalized sp{sup 2} islands with a high degree of surface oxidation. This would explain the photoluminescent properties observed in the samples under study. The combined up- and down-conversion photoluminescence processes would made these GQDs a powerful energy-transfer component in GQDs–TiO{sub 2} nanocomposite systems, which could be used in photocatalyst devices with superior performance compared to simple TiO{sub 2} systems.

  4. Quantum dot-polymer conjugates for stable luminescent displays.

    Science.gov (United States)

    Ghimire, Sushant; Sivadas, Anjaly; Yuyama, Ken-Ichi; Takano, Yuta; Francis, Raju; Biju, Vasudevanpillai

    2018-05-23

    The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices. One of the primary requirements for such real-world applications of quantum dots is their stable and uniform distribution in optically transparent matrices. In this work, we prepare transparent thin films of polymer-quantum dot conjugates, where CdSe/ZnS quantum dots are uniformly distributed at high densities in a chitosan-polystyrene copolymer (CS-g-PS) matrix. Here, quantum dots in an aqueous solution are conjugated to the copolymer by a phase transfer reaction. With the stable conjugation of quantum dots to the copolymer, we prevent undesired phase separation between the two and aggregation of quantum dots. Furthermore, the conjugate allows us to prepare transparent thin films in which quantum dots are uniformly distributed at high densities. The CS-g-PS copolymer helps us in not only preserving the photoluminescence properties of quantum dots in the film but also rendering excellent photostability to quantum dots at the ensemble and single particle levels, making the conjugate a promising material for photoluminescence-based devices.

  5. Photoluminescence properties of a novel conjugate of water-soluble CdTe quantum dots to guanine

    Energy Technology Data Exchange (ETDEWEB)

    Feng Xuejiao [North-East Normal University, Changchun 130024 (China); Shang, Qingkun, E-mail: shangqk995@nenu.edu.c [North-East Normal University, Changchun 130024 (China); Liu Hongjian [Relia Diagnostic Systems, Burlingame, CA 94010 (United States); Wang Wenlan; Wang Zhidan; Liu Junyu [North-East Normal University, Changchun 130024 (China)

    2010-04-15

    A novel conjugate of water-soluble CdTe quantum dots to a small biomolecule guanine has been obtained in aqueous phase. The photoluminescence property and the stability of the conjugate increased comparing to CdTe QDs. The interaction between CdTe QDs and guanine was studied by TEM, fluorescence microscope and photoluminescence (PL), IR, UV-Vis spectra. The effects of reflux time, pH value, ionic strength, and the ratio of CdTe QDs to guanine on the photoluminescence properties of conjugate were investigated in detail. The results show that guanine has a great influence on both the photoluminescence property and stability of thioglycolic acid-stabilized CdTe QDs. The formation of coordination and hydrogen bond between guanine molecules and CdTe including thioglycolic acid on its surface may effectively enhance the PL intensity and stability of CdTe QDs. The maximum PL intensity of the conjugate was obtained on the condition with lower ionic strength, less than 30 min reflux time, neutral pH value and 6/1 as molar ratio of guanine to CdTe.

  6. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Chao, E-mail: chaoyangscu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Feng, Guoying, E-mail: guoing_feng@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Dai, Shenyu, E-mail: 232127079@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Wang, Shutong, E-mail: wangshutong.scu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Li, Guang, E-mail: 632524844@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhang, Hua [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhou, Shouhuan, E-mail: zhoush@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); North China Research Institute of Electro-Optics, 4 Jiuxianqiao Street, Chaoyang District, Beijing 100015 (China)

    2017-08-31

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  7. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    International Nuclear Information System (INIS)

    Yang, Chao; Feng, Guoying; Dai, Shenyu; Wang, Shutong; Li, Guang; Zhang, Hua; Zhou, Shouhuan

    2017-01-01

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  8. Excitation dependence of photoluminescence in silicon quantum dots

    International Nuclear Information System (INIS)

    Wen Xiaoming; Lap Van Dao; Hannaford, Peter; Cho, E-C; Cho, Young H; Green, Martin A

    2007-01-01

    We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron-hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron-hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide

  9. Quantification of thyroxine by the selective photoluminescence quenching of L-cysteine–ZnS quantum dots in aqueous solution containing hexadecyltrimethylammonium bromide

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Sarzamin; Carneiro, Leonardo S.A. [Chemistry Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro-RJ (Brazil); Romani, Eric C.; Larrudé, Dunieskys G. [Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900, Rio de Janeiro-RJ (Brazil); Aucelio, Ricardo Q., E-mail: aucelior@puc-rio.br [Chemistry Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro-RJ (Brazil)

    2014-12-15

    The determination of L-thyroxine is proposed based on the photoluminescence quenching effect caused on the L-cysteine modified ZnS quantum dots (L-cysteine ZnS QDs) aqueous dispersion. Under optimum conditions, the analytical response followed a Stern–Volmer model and the experimental conditions were adjusted to enable a robust and reproducible photoluminescence signal. The linear response observed in the quantum dots aqueous dispersion covered the L-thyroxine concentration from the LOQ (2.0×10{sup −8} mol L{sup −1}) to 4.0×10{sup −6} mol L{sup −1}. The approach was tested in the determination of L-thyroxine in pharmaceutical formulations used to treat patients with thyroid gland disorder. The percent recoveries in controlled samples were between 93.3 and 103%. Analyte fortified saliva was also evaluated as a possible sample for L-thyroxine monitoring of a patient under treatment. It was identified a static type of photoluminescence quenching caused by L-thyroxine. - Highlights: • L-cysteine ZnS QDs were used as a photoluminescent probe to detect L-thyroxine. • Intensity of probe decreases following a Stern–Volmer model. • The method can detect down ng L{sup −1} levels of L-thyroxine in the probe dispersion. • Method was used to determinate of L-thyroxine in saliva and in pharmaceuticals. • Mechanism of interaction between L-thyroxine and quantum dots was studied.

  10. Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

    Science.gov (United States)

    Dong, Yajie

    2017-02-01

    Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum

  11. Modulation of the photoluminescence in carbon dots through surface modification: from mechanism to white light-emitting diodes

    Science.gov (United States)

    Zhu, Jinyang; Shao, He; Bai, Xue; Zhai, Yue; Zhu, Yongsheng; Chen, Xu; Pan, Gencai; Dong, Biao; Xu, Lin; Zhang, Hanzhuang; Song, Hongwei

    2018-06-01

    Carbon dots (CDs) have emerged as a new type of fluorescent material because of their unique optical advantages, such as high photoluminescence quantum yields (QYs), excellent photo-stability, excitation-dependent emissions, and low toxicity. However, the photoluminescence mechanism for CDs remains unclear, which limits their further practical application. Here, CDs were synthesized via a solvothermal route from citric acid and urea. Through the oxidation and reduction treatment of pristine CDs, the origin of the photoluminescence and the involved mechanism were revealed. We found that the blue/green/red emissions originated from three diverse emitting states, i.e. the intrinsic state, and C=O- and C=N-related surface states, respectively. Based on the as-prepared CDs, a pH sensor depending on the radiometric luminescence detection was developed. Furthermore, we constructed CD/PVP (PVP, polyvinylpyrrolidone) composite films, which exhibited white light emission with photoluminescence QYs of 15.3%. The white light emission with different correlated color temperatures (CCTs), from 4807 K to 3319 K, was obtained by simply changing the amount of PVP solution. Benefiting from the white light-emitting solid-state films, single-component white light-emitting diodes were fabricated with an average color rendering index value (Ra) of 80.0, luminous efficiency of 10.2 lm W‑1, and good working stability, thus indicating a promising potential for practical lighting applications.

  12. Red-shift of the photoluminescent emission peaks of CdTe quantum dots due to the synergistic interaction with carbon quantum dot mixtures

    International Nuclear Information System (INIS)

    Pelayo, E; Zazueta, A; López-Delgado, R; Ayón, A; Saucedo, E; Ruelas, R

    2016-01-01

    We report the relatively large red-shift effect observed in down-shifting carbon quantum dots (CQDs) that is anticipated to have a positive impact on the power conversion efficiency of solar cells. Specifically, with an excitation wavelength of 390 nm, CQDs of different sizes, exhibited down-shifted emission peaks centered around 425 nm. However, a solution comprised of a mixture of CQDs of different sizes, was observed to have an emission peak red-shifted to 515 nm. The effect could arise when larger carbon quantum dots capture the photons emitted by their smaller counterparts followed by the subsequent re-emission at longer wavelengths. Furthermore, the red-shift effect was also observed in CdTe QDs when added to a solution with the aforementioned mixture of Carbon QDs. Thus, whereas a solution solely comprised of a collection of CdTe QDs of different sizes, exhibited a down-shifted photoluminescence centered around 555 nm, the peak was observed to be further red-shifted to 580 nm when combined with the solution of CQDs of different sizes. The quantum dot characterization included crystal structure analysis as well as photon absorption and photoluminescence wavelengths. Subsequently, the synthesized QDs were dispersed in a polymeric layer of poly-methyl-methacrylate (PMMA) and incorporated on functional and previously characterized solar cells, to quantify their influence in the electrical performance of the photovoltaic structures. We discuss the synthesis and characterization of the produced Carbon and CdTe QDs, as well as the observed improvement in the power conversion efficiency of the fabricated photovoltaic devices. (paper)

  13. Ratiometric photoluminescence sensing based on Ti3C2 MXene quantum dots as an intracellular pH sensor.

    Science.gov (United States)

    Chen, Xu; Sun, Xueke; Xu, Wen; Pan, Gencai; Zhou, Donglei; Zhu, Jinyang; Wang, He; Bai, Xue; Dong, Biao; Song, Hongwei

    2018-01-18

    Intracellular pH sensing is of importance and can be used as an indicator for monitoring the evolution of various diseases and the health of cells. Here, we developed a new class of surface-functionalized MXene quantum dots (QDs), Ti 3 C 2 , by the sonication cutting and hydrothermal approach and further explored their intracellular pH sensing. The functionalized Ti 3 C 2 QDs exhibit bright excitation-dependent blue photoluminescence (PL) originating from the size effect and surface defects. Meanwhile, Ti 3 C 2 QDs demonstrate a high PL response induced by the deprotonation of the surface defects. Furthermore, combining the highly pH sensitive Ti 3 C 2 QDs with the pH insensitive [Ru(dpp) 3 ]Cl 2 , we developed a ratiometric pH sensor to quantitatively monitor the intracellular pH values. These novel MXene quantum dots can serve as a promising platform for developing practical fluorescent nanosensors.

  14. Sol-Gel Chemistry for Carbon Dots.

    Science.gov (United States)

    Malfatti, Luca; Innocenzi, Plinio

    2018-03-14

    Carbon dots are an emerging class of carbon-based nanostructures produced by low-cost raw materials which exhibit a widely-tunable photoluminescence and a high quantum yield. The potential of these nanomaterials as a substitute of semiconductor quantum dots in optoelectronics and biomedicine is very high, however they need a customized chemistry to be integrated in host-guest systems or functionalized in core-shell structures. This review is focused on recent advances of the sol-gel chemistry applied to the C-dots technology. The surface modification, the fine tailoring of the chemical composition and the embedding into a complex nanostructured material are the main targets of combining sol-gel processing with C-dots chemistry. In addition, the synergistic effect of the sol-gel precursor combined with the C-dots contribute to modify the intrinsic chemo-physical properties of the dots, empowering the emission efficiency or enabling the tuning of the photoluminescence over a wide range of the visible spectrum. © 2018 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Chemical sensitivity of InP/In0.48Ga0.52P surface quantum dots studied by time-resolved photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    De Angelis, Roberta; Casalboni, Mauro; De Matteis, Fabio; Hatami, Fariba; Masselink, William T.; Zhang, Hong; Prosposito, Paolo

    2015-01-01

    InP/InGaP surface quantum dots represent an attractive material for optical chemical sensors since they show a remarkable near infra-red emission at room temperature, whose intensity increases rapidly and reversibly depending on the composition of the environmental atmosphere. We show here their emission properties by time resolved photoluminescence spectroscopy investigation. Photoluminescence transients with and without chemical solvent vapours (methanol, clorophorm, acetone and water) were fitted with a 3-exponential decay law with times of about 0.5 ns, 2 ns and 7 ns. The measurements revealed a weak effect on clorophorm, acetone and water, while the initial decay time of InP surface quantum dots increases (up to 15%) upon methanol vapour exposure, indicating that the organic molecules efficiently saturate QD non-radiative surface states. - Highlights: • InP SQDs emission depends on the presence of solvent vapours in the atmosphere. • TR photoluminescence transients were fitted with a 3-exponential decay law. • The initial decay time increases (up to 15%) upon methanol vapour exposure. • Organic molecules efficiently saturate QD non-radiative surface states.

  16. Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

    Directory of Open Access Journals (Sweden)

    Lin Chien-Hung

    2011-01-01

    Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

  17. Highly Luminescent Phase-Stable CsPbI3 Perovskite Quantum Dots Achieving Near 100% Absolute Photoluminescence Quantum Yield.

    Science.gov (United States)

    Liu, Feng; Zhang, Yaohong; Ding, Chao; Kobayashi, Syuusuke; Izuishi, Takuya; Nakazawa, Naoki; Toyoda, Taro; Ohta, Tsuyoshi; Hayase, Shuzi; Minemoto, Takashi; Yoshino, Kenji; Dai, Songyuan; Shen, Qing

    2017-10-24

    Perovskite quantum dots (QDs) as a new type of colloidal nanocrystals have gained significant attention for both fundamental research and commercial applications owing to their appealing optoelectronic properties and excellent chemical processability. For their wide range of potential applications, synthesizing colloidal QDs with high crystal quality is of crucial importance. However, like most common QD systems such as CdSe and PbS, those reported perovskite QDs still suffer from a certain density of trapping defects, giving rise to detrimental nonradiative recombination centers and thus quenching luminescence. In this paper, we show that a high room-temperature photoluminescence quantum yield of up to 100% can be obtained in CsPbI 3 perovskite QDs, signifying the achievement of almost complete elimination of the trapping defects. This is realized with our improved synthetic protocol that involves introducing organolead compound trioctylphosphine-PbI 2 (TOP-PbI 2 ) as the reactive precursor, which also leads to a significantly improved stability for the resulting CsPbI 3 QD solutions. Ultrafast kinetic analysis with time-resolved transient absorption spectroscopy evidence the negligible electron or hole-trapping pathways in our QDs, which explains such a high quantum efficiency. We expect the successful synthesis of the "ideal" perovskite QDs will exert profound influence on their applications to both QD-based light-harvesting and -emitting devices.

  18. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon; Yassitepe, Emre; Voznyy, Oleksandr; Comin, Riccardo; Walters, Grant; Gong, Xiwen; Kanjanaboos, Pongsakorn; Nogueira, Ana F.; Sargent, Edward H.

    2015-01-01

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  19. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon

    2015-11-18

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  20. Surface modification effects on defect-related photoluminescence in colloidal CdS quantum dots.

    Science.gov (United States)

    Lee, TaeGi; Shimura, Kunio; Kim, DaeGwi

    2018-05-03

    We investigated the effects of surface modification on the defect-related photoluminescence (PL) band in colloidal CdS quantum dots (QDs). A size-selective photoetching process and a surface modification technique with a Cd(OH)2 layer enabled the preparation of size-controlled CdS QDs with high PL efficiency. The Stokes shift of the defect-related PL band before and after the surface modification was ∼1.0 eV and ∼0.63 eV, respectively. This difference in the Stokes shifts suggests that the origin of the defect-related PL band was changed by the surface modification. Analysis by X-ray photoelectron spectroscopy revealed that the surface of the CdS QDs before and after the surface modification was S rich and Cd rich, respectively. These results suggest that Cd-vacancy acceptors and S-vacancy donors affect PL processes in CdS QDs before and after the surface modification, respectively.

  1. Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

    Science.gov (United States)

    Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

    2017-07-24

    We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

  2. High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method.

    Science.gov (United States)

    Yang, Weimin; Yang, Huafang; Ding, Wenhao; Zhang, Bing; Zhang, Le; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-11-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor. Copyright © 2016 Elsevier B.V. All rights reserved.

  3. Size dependent photoluminescence property of hydrothermally synthesized crystalline carbon quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, S.; Banerjee, D.; Ghorai, U.K.; Das, N.S. [School of Material Science and Nanotechnology Jadavpur University, Kolkata 700032 (India); Chattopadhyay, K.K., E-mail: kalyan_chattopadhyay@yahoo.com [School of Material Science and Nanotechnology Jadavpur University, Kolkata 700032 (India); Thin Film and NanoScience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032 (India)

    2016-10-15

    In this work, simple hydrothermal synthesis of water soluble Carbon quantum dots (CQDs) of different sizes has been reported. The effect of synthesis temperature and synthesis time on the particle size has also been shown. The structures of all the as-prepared samples were studied by field emission scanning electron microscope and high resolution transmission electron microscope. Fourier transformed infrared spectrophotometer analyzes the different bonding present in the sample whereas Raman spectrophotometer quantifies the hybridization state of the prepared samples. UV–vis spectrophotometer gives the variation of absorbance of all the samples with wavelength. Dynamic light scattering study shows the variation of particle size with deposition condition and corresponding zeta potential gives the idea about the stability of the CQD solutions. The photoluminescence (PL) properties of the as prepared CQDs were also studied in detail. It is noticed that with the increase of excitation wavelength, the PL emissions for the different samples were red shifted. The results have been explained in terms of the excitation dependent emission, variations in size of the CQD and presence of different functional groups on the surface of CQDs.

  4. Size dependent photoluminescence property of hydrothermally synthesized crystalline carbon quantum dots

    International Nuclear Information System (INIS)

    Sarkar, S.; Banerjee, D.; Ghorai, U.K.; Das, N.S.; Chattopadhyay, K.K.

    2016-01-01

    In this work, simple hydrothermal synthesis of water soluble Carbon quantum dots (CQDs) of different sizes has been reported. The effect of synthesis temperature and synthesis time on the particle size has also been shown. The structures of all the as-prepared samples were studied by field emission scanning electron microscope and high resolution transmission electron microscope. Fourier transformed infrared spectrophotometer analyzes the different bonding present in the sample whereas Raman spectrophotometer quantifies the hybridization state of the prepared samples. UV–vis spectrophotometer gives the variation of absorbance of all the samples with wavelength. Dynamic light scattering study shows the variation of particle size with deposition condition and corresponding zeta potential gives the idea about the stability of the CQD solutions. The photoluminescence (PL) properties of the as prepared CQDs were also studied in detail. It is noticed that with the increase of excitation wavelength, the PL emissions for the different samples were red shifted. The results have been explained in terms of the excitation dependent emission, variations in size of the CQD and presence of different functional groups on the surface of CQDs.

  5. Surface effects on the photoluminescence of Si quantum dots

    International Nuclear Information System (INIS)

    Wang, Chiang-Jing; Tsai, Meng-Yen; Chi, Cheng Chung; Perng, Tsong-Pyng

    2009-01-01

    Si quantum dots (SiQDs) with sizes ranging from 5 to 20 nm were fabricated by vapor condensation. They showed red photoluminescence (PL) in vacuum with the peak located at around 750 nm. After the specimen was exposed to air, the PL intensity became higher, and continued to increase during the PL test with a cycling of vacuum-air-vacuum. In pure oxygen, the PL intensity exhibited an irreversible decrease, while in nitrogen a smaller amount of reversible increase of PL intensity was observed. Furthermore, the PL intensity exhibited a remarkable enhancement if the SiQDs were treated with water. With HF treatment, the PL peak position showed a blue-shift to 680 nm, and was recovered after subsequent exposure to air. Si-O-H complexes were suggested to be responsible for this red luminescence. The irreversible decrease of PL intensity due to oxygen adsorption was speculated to be caused by the modification of chemical bonds on the surface. In the case of nitrogen adsorption, the PL change was attributed to the surface charging during adsorption.

  6. Photoluminescence of ZnS: Mn quantum dot by hydrothermal method

    Directory of Open Access Journals (Sweden)

    Yun Hu

    2018-01-01

    Full Text Available ZnS: Mn quantum dots (QDs with the average grain size from 4.2 to 7.2 nm were synthesized by a hydrothermal method. All samples were cubic zinc blende structure (β-ZnS measured using X-ray diffraction (XRD. And the main diffraction peaks of ZnS: Mn shifted slightly towards higher angle in comparison with the intrinsic ZnS because of the substitution of Mn2+ for Zn2+. Due to the small grain size (4-7 nm effect, the poor dispersion and serious reunion phenomenon for the samples were observed from transmission electron microscopy (TEM. ZnS: Mn QDs had four peaks centered at 466, 495, 522, and 554 nm, respectively, in the photoluminescence (PL spectra, in which the band at 554 nm absent in the intrinsic ZnS: Mn is attributed to the doping of Mn2+ in the lattice sites. As the concentration of Mn2+ increasing from 0% to 0.6 at%, the intensity of the PL emission also increased. But the concentration reached 0.9 at%, quenching of PL emission occurred. The peak in ZnS: Mn QDs observed at 490 cm-1 was originated from the stretching vibration of the Mn–O bonds in the Fourier transform infrared (FTIR spectra. And the small changes about this peak compared with the previous reports at 500 cm-1 can be attributed to the formation of quantum dots. This method we utilized to synthesize ZnS: Mn QDs is very simple, low cost, and applicable for other semiconductor QD materials.

  7. Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen InxGa1−xNyAs1−y/GaAs cylindrically shaped quantum dots

    International Nuclear Information System (INIS)

    Duque, C.M.; Morales, A.L.; Mora-Ramos, M.E.; Duque, C.A.

    2014-01-01

    An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs

  8. Facile synthetic method for pristine graphene quantum dots and graphene oxide quantum dots: origin of blue and green luminescence.

    Science.gov (United States)

    Liu, Fei; Jang, Min-Ho; Ha, Hyun Dong; Kim, Je-Hyung; Cho, Yong-Hoon; Seo, Tae Seok

    2013-07-19

    Pristine graphene quantum dots and graphene oxide quantum dots are synthesized by chemical exfoliation from the graphite nanoparticles with high uniformity in terms of shape (circle), size (less than 4 nm), and thickness (monolayer). The origin of the blue and green photoluminescence of GQDs and GOQDs is attributed to intrinsic and extrinsic energy states, respectively. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Combination of carbon dot and polymer dot phosphors for white light-emitting diodes.

    Science.gov (United States)

    Sun, Chun; Zhang, Yu; Sun, Kai; Reckmeier, Claas; Zhang, Tieqiang; Zhang, XiaoYu; Zhao, Jun; Wu, Changfeng; Yu, William W; Rogach, Andrey L

    2015-07-28

    We realized white light-emitting diodes with high color rendering index (85-96) and widely variable color temperatures (2805-7786 K) by combining three phosphors based on carbon dots and polymer dots, whose solid-state photoluminescence self-quenching was efficiently suppressed within a polyvinyl pyrrolidone matrix. All three phosphors exhibited dominant absorption in the UV spectral region, which ensured the weak reabsorption and no energy transfer crosstalk. The WLEDs showed excellent color stability against the increasing current because of the similar response of the tricolor phosphors to the UV light variation.

  10. Facile synthesis of S, N co-doped carbon dots and investigation of their photoluminescence properties.

    Science.gov (United States)

    Zhang, Yue; He, Junhui

    2015-08-21

    A facile one-pot approach to prepare photoluminescent carbon dots (CDs) was developed through hydrothermal treatment of cysteine and citric acid. The obtained CDs show stable and bright blue emission with a quantum yield of 54% and an average lifetime of 11.61 ns. Moreover, the two-photon induced upconversion fluorescence of the CDs was observed and demonstrated. Interestingly, both down and up conversion fluorescence of the CDs show excitation-independent emission, which is quite different from most of the previously reported CDs. Ultrafast spectroscopy was also employed here to study the photoluminescence (PL) properties of the CDs. After characterization using various spectroscopic techniques, a unique PL mechanism for the as-prepared CDs' fluorescence was proposed accordingly. In addition, the influence of various metal ions on the CD fluorescence was examined and no quenching phenomena were observed. Meanwhile, gold nanoparticles (Au NPs) were found to be good quenchers of CD fluorescence and their quenching behavior was fitted to the Stern-Volmer equation. This provides new opportunities for fluorescence sensor designs and light energy conversion applications. Finally, the as-prepared CDs were inkjet-printed to form a desirable pattern, which is useful for fluorescent patterns, and anti-counterfeiting labeling.

  11. Photoluminescence enhancement in nanocomposite thin films of CdS-ZnO

    International Nuclear Information System (INIS)

    Ayyub, Pushan; Vasa, Parinda; Taneja, Praveen; Banerjee, Rajarshi; Singh, B.P.

    2005-01-01

    We show that the photoluminescence emitted from a dense, two-component quantum dot ensemble on a thin film is significantly higher and decays much faster than that from quantum dots of either of the two pure systems (CdS and ZnO). The semiconductor nanocomposite, in which the characteristic grain size of each species was 2-3 nm, was deposited directly on Si wafers by high-pressure magnetron sputtering, and exhibits a single, relatively sharp optical absorption edge

  12. InP quantum dots embedded in GaP: Optical properties and carrier dynamics

    International Nuclear Information System (INIS)

    Hatami, F.; Masselink, W.T.; Schrottke, L.; Tomm, J.W.; Talalaev, V.; Kristukat, C.; Goni, A.R.

    2003-01-01

    The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beam epitaxy forms quantum dots for InP coverage greater than 1.8 monolayers. Strong photoluminescence from the quantum dots is observed up to room temperature at about 2 eV; photoluminescence from the two-dimensional InP wetting layer is measured at about 2.2 eV. Modeling based on the 'model-solid theory' indicates that the band alignment for the InP quantum dots is direct and type I. Furthermore, low-temperature time-resolved photoluminescence measurements indicate that the carrier lifetime in the quantum dots is about 2 ns, typical for type-I quantum dots. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP quantum dots at normal pressure with the GaP X states lying about 30 meV higher than the Γ states in the InP quantum dots, but indicate that they become type II under hydrostatic pressures of about 1.2 GPa

  13. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    International Nuclear Information System (INIS)

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  14. Photoluminescence effects of graphitic core size and surface functional groups in carbon dots: COO− induced red-shift emission

    KAUST Repository

    Hola, Katerina; Bourlinos, Athanasios B.; Kozak, Ondrej; Berka, Karel; Siskova, Karolina M.; Havrdova, Marketa; Tucek, Jiri; Safarova, Klara; Otyepka, Michal; Giannelis, Emmanuel P.; Zboril, Radek

    2014-01-01

    We present a simple molecular approach to control the lipophilic/ hydrophilic nature of photoluminescent carbon dots (CDs) based on pyrolysis of alkyl gallate precursors. Depending on the gallic acid derivative used, CDs with different alkyl groups (methyl, propyl, lauryl) on the surface can be obtained by isothermal heating at 270 C. This precursor-derived approach allows not only the control of lipophilicity but also the length of the particular alkyl chain enables the control over both the size and photoluminescence (PL) of the prepared CDs. Moreover, the alkyl chains on the CDs surface can be readily converted to carboxylate groups via a mild base hydrolysis to obtain water dispersible CDs with a record biocompatibility. The observed differences in PL properties of CDs and time-resolved PL data, including contributions from carbogenic cores and surface functional group, are rationalized and discussed in detail using time-dependent density functional theory (TD-DFT) calculations. © 2013 Elsevier Ltd. All rights reserved.

  15. Photoluminescence effects of graphitic core size and surface functional groups in carbon dots: COO− induced red-shift emission

    KAUST Repository

    Hola, Katerina

    2014-04-01

    We present a simple molecular approach to control the lipophilic/ hydrophilic nature of photoluminescent carbon dots (CDs) based on pyrolysis of alkyl gallate precursors. Depending on the gallic acid derivative used, CDs with different alkyl groups (methyl, propyl, lauryl) on the surface can be obtained by isothermal heating at 270 C. This precursor-derived approach allows not only the control of lipophilicity but also the length of the particular alkyl chain enables the control over both the size and photoluminescence (PL) of the prepared CDs. Moreover, the alkyl chains on the CDs surface can be readily converted to carboxylate groups via a mild base hydrolysis to obtain water dispersible CDs with a record biocompatibility. The observed differences in PL properties of CDs and time-resolved PL data, including contributions from carbogenic cores and surface functional group, are rationalized and discussed in detail using time-dependent density functional theory (TD-DFT) calculations. © 2013 Elsevier Ltd. All rights reserved.

  16. Nonradiative recombination in GaN quantum dots formed in the AlN matrix

    International Nuclear Information System (INIS)

    Aleksandrov, I. A.; Zhuravlev, K. S.; Mansurov, V. G.

    2009-01-01

    The mechanisms of temperature quenching of steady-state photoluminescence are studied for structures with hexagonal GaN quantum dots embedded in the AlN matrix. The structures are grown by molecular beam epitaxy. The study is conducted for structures with differently sized quantum dots, for which the peak of the photoluminescence band is in the range from 2.5 to 4.0 eV. It is found that the activation energy of thermal quenching of photoluminescence varies from 27 to 110 meV, as the quantum-dot height is decreased from 5 to 2 nm. A model is suggested to interpret the results. According to the model, the photo-luminescence signal is quenched because of the transfer of charge carriers from energy levels in the quantum dots to defect levels in the matrix.

  17. Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kawazu, T., E-mail: KAWAZU.Takuya@nims.go.jp; Noda, T.; Sakuma, Y. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)

    2016-04-15

    We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 {sup o}C and 400 {sup o}C) and carried out PL measurements. The 20 {sup o}C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences of the PL characteristics are explained by the effects of the WL.

  18. Preparation of carbon quantum dots based high photostability luminescent membranes.

    Science.gov (United States)

    Zhao, Jinxing; Liu, Cui; Li, Yunchuan; Liang, Jiyuan; Liu, Jiyan; Qian, Tonghui; Ding, Jianjun; Cao, Yuan-Cheng

    2017-06-01

    Urethane acrylate (UA) was used to prepare carbon quantum dots (C-dots) luminescent membranes and the resultants were examined with FT-IR, mechanical strength, scanning electron microscope (SEM) and quantum yields (QYs). FT-IR results showed the polyurethane acrylate (PUA) prepolymer -C = C-vibration at 1101 cm -1 disappeared but there was strong vibration at1687cm -1 which was contributed from the-C = O groups in cross-linking PUA. Mechanical strength results showed that the different quantity of C-dots loadings and UV-curing time affect the strength. SEM observations on the cross-sections of the membranes are uniform and have no structural defects, which prove that the C-dots are compatible with the water-soluble PUA resin. The C-dot loading was increased from 0 to 1 g, the maximum tensile stress was nearly 2.67 MPa, but the tensile strain was decreased from 23.4% to 15.1% and 7.2% respectively. QYs results showed that the C-dots in the membrane were stable after 120 h continuous irradiation. Therefore, the C-dots photoluminescent film is the promising material for the flexible devices in the future applications. Copyright © 2016 John Wiley & Sons, Ltd.

  19. Evidence for possible quantum dot interdiffusion induced by cap layer growth

    International Nuclear Information System (INIS)

    Jasinski, J.; Czeczott, M.; Gladysz, A.; Babinski, A.; Kozubowski, J.

    1999-01-01

    Self-organised InGaAs quantum dots were grown on (001) GaAs substrates and covered with two different types of cap layers grown at significantly different temperatures. In order to determine quantum dot emission energy and dot size distribution, photoluminescence and transmission electron microscopy studies were carried out on such samples. Simple theoretical model neglecting effect of interdiffusion allowed for correlation between quantum dot size and photoluminescence emission energy only in the case of dots covered by cap layers grown at the lower temperature. For dots covered by layers grown at the higher temperature such correlation was possible only when strong interdiffusion was assumed. (author)

  20. Spin interactions in InAs quantum dots

    Science.gov (United States)

    Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

  1. Polarized electrons, trions, and nuclei in charged quantum dots

    Science.gov (United States)

    Bracker, A. S.; Tischler, J. G.; Korenev, V. L.; Gammon, D.

    2003-07-01

    We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization of photoluminescence. Electrons and nuclei are polarized indirectly through subsequent relaxation processes. Polarized electrons are identified by the Hanle effect for exciton and trion photoluminescence, while polarized nuclei are identified through the Overhauser effect in individual charged quantum dots.

  2. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

    Science.gov (United States)

    Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming

    2012-07-11

    Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

  3. Exciton lifetime and spin dynamics in type-I In1−xAlxAs/Ga0.67Al0.33As quantum dots: Photoluminescence and pump-probe experiments

    International Nuclear Information System (INIS)

    Ben Daly, A.; Bernardot, F.; Barisien, T.; Galopin, E.; Lemaître, A.; Maaref, M.A.; Testelin, C.

    2015-01-01

    The exciton lifetime and spin relaxation have been studied in self-assembled In 1−x Al x As/Ga 0.67 Al 0.33 As quantum dots (QDs). Time-resolved photoluminescence and resonant pump-probe measurements were performed, at variable temperature and for different QD aluminium compositions. At low temperature, a long exciton-spin relaxation time has been measured, in agreement with the QD zero-dimensional confinement and the quenching of the relaxation mechanisms. The existence of a quasi-2D regime, in sample with a high QD density, has been observed. The importance of thermally-activated processes toward excited states is also evidenced, for QDs with different compositions and sizes. - Highlights: • The exciton lifetime and spin relaxation have been studied in In 1−x Al x As/Ga 0.67 Al 0.33 As quantum dot (QD). • Time-resolved photoluminescence (TRPL) and pump-probe measurements were performed, at variable temperature and for different QD aluminium compositions. • From the PL decay time, several thermal activation processes, related to 0D or 2D regime, or dependending on collective mechanisms. • The importance of thermal activated processes toward excited states is also evidenced, for QD with different compositions and sizes

  4. Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

    International Nuclear Information System (INIS)

    Li Mi-Feng; Ni Hai-Qiao; Niu Zhi-Chuan; Ding Ying; David Bajek; Liang Kong; Ana Cataluna Maria

    2014-01-01

    The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 °C, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1 × 10 −6 Torr (1 Torr = 1.33322 × 10 2 Pa), provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a ∼ 19.7-GHz repetition rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Effect of Ligand Exchange on the Photoluminescence Properties of Cu-Doped Zn-In-Se Quantum Dots

    Science.gov (United States)

    Dong, Xiaofei; Xu, Jianping; Yang, Hui; Zhang, Xiaosong; Mo, Zhaojun; Shi, Shaobo; Li, Lan; Yin, Shougen

    2018-04-01

    The surface-bound ligands of a semiconductor nanocrystal can affect its electron transition behavior. We investigate the photoluminescence (PL) properties of Cu-doped Zn-In-Se quantum dots (QDs) through the exchange of oleylamine with 6-mercaptohexanol (MCH). Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies, and mass spectrometry reveal that the short-chain MCH molecules are bound to the QD surface. The emission peaks remain unchanged after ligand exchange, and the PL quantum yield is reduced from 49% to 38%. The effects of particle size and defect type on the change in PL behavior upon ligand substitution are excluded through high-resolution transmission electron microscopy, UV-Vis absorption, and PL spectroscopies. The origin of the decreased PL intensity is associated with increased ligand density and the stronger ligand electron-donating abilities of MCH-capped QDs that induce an increase in the nonradiative transition probability. A lower PL quenching transition temperature is observed for MCH-capped QDs and is associated with increasing electron-acoustic phonon coupling due to the lower melting temperature of MCH.

  6. Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

    Science.gov (United States)

    Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

    2018-06-01

    InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

  7. Photoluminescence investigation of type-II GaSb/GaAs quantum dots grown by liquid phase epitaxy

    Science.gov (United States)

    Wang, Yang; Hu, Shuhong; Xie, Hao; Lin, Hongyu; lu, Hongbo; Wang, Chao; Sun, Yan; Dai, Ning

    2018-06-01

    GaSb quantum dots (QDs) with an areal density of ∼1 × 1010 cm-2 are successfully grown by the modified (rapid slider) liquid phase epitaxy technique. The morphology of the QDs has been investigated by scanning electron microscope (SEM) and atom force microscope (AFM). The power-dependence and temperature-dependence photoluminescence (PL) spectra have been studied. The bright room-temperature PL suggests a good luminescence quality of GaSb QDs/GaAs matrix system. The type-II alignment of the GaSb QDs/GaAs matrix system is verified by the blue-shift of the QDs peak with the increase of excitation power. From the temperature-dependence PL spectra, the activation energy of QDs is determined to be 111 meV.

  8. Dark-red-emitting CdTe0.5Se0.5/Cd0.5Zn0.5S quantum dots: Effect of chemicals on properties

    International Nuclear Information System (INIS)

    Yang, Ping; Zhang, Aiyu; Li, Xiaoyu; Liu, Ning; Zhang, Yulan; Zhang, Ruili

    2013-01-01

    CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution. - Graphical abstract: CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S quantum dots (QDs) with tunable photoluminescence, high PL efficiency, and high stability through organic synthesis, in which chemicals affected the properties of the QDs. Display Omitted - Highlights: • CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S quantum dots created via organic synthesis. • Chemicals affected the properties of the quantum dots. • The quantum dots revealed high photoluminescence efficiency and stability. • The quantum dots with tunable photoluminescence in a range from yellow to dark red. • The QDs are utilizable for various applications such as biological labeling

  9. Polymers in Carbon Dots: A Review

    Directory of Open Access Journals (Sweden)

    Yiqun Zhou

    2017-02-01

    Full Text Available Carbon dots (CDs have been widely studied since their discovery in 2004 as a green substitute of the traditional quantum dots due to their excellent photoluminescence (PL and high biocompatibility. Meanwhile, polymers have increasingly become an important component for both synthesis and modification of CDs to provide polymeric matrix and enhance their PL property. Furthermore, critical analysis of composites of CDs and polymers has not been available. Herein, in this review, we summarized the use of polymers in the synthesis and functionalization of CDs, and the applications of these CDs in various fields.

  10. Intense, stable and excitation wavelength-independent photoluminescence emission in the blue-violet region from phosphorene quantum dots

    Science.gov (United States)

    Ge, Shuaipeng; Zhang, Lisheng; Wang, Peijie; Fang, Yan

    2016-01-01

    Nanoscale phosphorene quantum dots (PQDs) with few-layer structures were fabricated by pulsed laser ablation of a bulk black phosphorus target in diethyl ether. An intense and stable photoluminescence (PL) emission of the PQDs in the blue-violet wavelength region is clearly observed for the first time, which is attributed to electronic transitions from the lowest unoccupied molecular orbital (LUMO) to the highest occupied molecular orbital (HOMO) and occupied molecular orbitals below the HOMO (H-1, H-2), respectively. Surprisingly, the PL emission peak positions of the PQDs are not red-shifted with progressively longer excitation wavelengths, which is in contrast to the cases of graphene and molybdenum disulphide quantum dots. This excitation wavelength-independence is derived from the saturated passivation on the periphery and surfaces of the PQDs by large numbers of electron-donating functional groups which cause the electron density on the PQDs to be dramatically increased and the band gap to be insensitive to the quantum size effect in the PQDs. This work suggests that PQDs with intense, stable and excitation wavelength-independent PL emission in the blue-violet region have a potential application as semiconductor-based blue-violet light irradiation sources. PMID:27265198

  11. Optical Spectroscopy Of Charged Quantum Dot Molecules

    Science.gov (United States)

    Scheibner, M.; Bracker, A. S.; Stinaff, E. A.; Doty, M. F.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2007-04-01

    Coupling between two closely spaced quantum dots is observed by means of photoluminescence spectroscopy. Hole coupling is realized by rational crystal growth and heterostructure design. We identify molecular resonances of different excitonic charge states, including the important case of a doubly charged quantum dot molecule.

  12. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

    International Nuclear Information System (INIS)

    Bietti, S; Sanguinetti, S; Somaschini, C; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

    2009-01-01

    We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

  13. Functionalization of graphene oxide nanostructures improves photoluminescence and facilitates their use as optical probes in preclinical imaging

    Science.gov (United States)

    Prabhakar, Neeraj; Näreoja, Tuomas; von Haartman, Eva; Şen Karaman, Didem; Burikov, Sergey A.; Dolenko, Tatiana A.; Deguchi, Takahiro; Mamaeva, Veronika; Hänninen, Pekka E.; Vlasov, Igor I.; Shenderova, Olga A.; Rosenholm, Jessica M.

    2015-06-01

    Recently reported photoluminescent nanographene oxides (nGOs), i.e. nanographene oxidised with a sulfuric/nitric acid mixture (SNOx method), have tuneable photoluminescence and are scalable, simple and fast to produce optical probes. This material belongs to the vast class of photoluminescent carbon nanostructures, including carbon dots, nanodiamonds (NDs), graphene quantum dots (GQDs), all of which demonstrate a variety of properties that are attractive for biomedical imaging such as low toxicity and stable photoluminescence. In this study, the nGOs were organically surface-modified with poly(ethylene glycol)-poly(ethylene imine) (PEG-PEI) copolymers tagged with folic acid as the affinity ligand for cancer cells expressing folate receptors. The functionalization enhanced both the cellular uptake and quantum efficiency of the photoluminescence as compared to non-modified nGOs. The nGOs exhibited an excitation dependent photoluminescence that facilitated their detection with a wide range of microscope configurations. The functionalized nGOs were non-toxic, they were retained in the stained cell population over a period of 8 days and they were distributed equally between daughter cells. We have evaluated their applicability in in vitro and in vivo (chicken embryo CAM) models to visualize and track migratory cancer cells. The good biocompatibility and easy detection of the functionalized nGOs suggest that they could address the limitations faced with quantum dots and organic fluorophores in long-term in vivo biomedical imaging.Recently reported photoluminescent nanographene oxides (nGOs), i.e. nanographene oxidised with a sulfuric/nitric acid mixture (SNOx method), have tuneable photoluminescence and are scalable, simple and fast to produce optical probes. This material belongs to the vast class of photoluminescent carbon nanostructures, including carbon dots, nanodiamonds (NDs), graphene quantum dots (GQDs), all of which demonstrate a variety of properties that are

  14. Properties of CdSe quantum dots coated with silica fabricated in a facile way

    International Nuclear Information System (INIS)

    Liao Yufeng; Li Wenjiang; He Sailing

    2007-01-01

    High quality quantum dots (QDs) CdSe were prepared using a novel and non-TOP method. Quantum dots of different sizes ranging from 2 to 4 nm could be obtained by removing aliquots of the reaction solution at different time intervals or by adjusting some reaction conditions. The CdSe quantum dots (core) were directly coated with silica (shell) using a microemulsion method. The design and preparation of a model QD/silica was described and characterized using transmission electron microscopy (TEM), UV-vis absorption, photoluminescence and laser confocal scanning microscopy. TEM images confirmed the well-monodispersed QDs and the silica shell around the CdSe core, respectively; laser confocal microscope images, UV-vis absorption and photoluminescence spectra clearly indicated that both the original QDs and the silica-coated QDs had good fluorescence properties. The quantum dots coated with silica shells were stable, water-soluble and less toxic (due to the silica shells), and are anticipated to be used as fluorescent probes for biosensing and imaging applications

  15. Influence of ablation wavelength and time on optical properties of laser ablated carbon dots

    Science.gov (United States)

    Isnaeni, Hanna, M. Yusrul; Pambudi, A. A.; Murdaka, F. H.

    2017-01-01

    Carbon dots, which are unique and applicable materials, have been produced using many techniques. In this work, we have fabricated carbon dots made of coconut fiber using laser ablation technique. The purpose of this work is to evaluate two ablation parameters, which are ablation wavelength and ablation time. We used pulsed laser from Nd:YAG laser with emit wavelength at 355 nm, 532 nm and 1064 nm. We varied ablation time one hour and two hours. Photoluminescence and time-resolved photoluminescence setup were used to study the optical properties of fabricated carbon dots. In general, fabricated carbon dots emit bluish green color emission upon excitation by blue laser. We found that carbon dots fabricated using 1064 nm laser produced the highest carbon dots emission among other samples. The peak wavelength of carbon dots emission is between 495 nm until 505 nm, which gives bluish green color emission. Two hours fabricated carbon dots gave four times higher emission than one hour fabricated carbon dot. More emission intensity of carbon dots means more carbon dots nanoparticles were fabricated during laser ablation process. In addition, we also measured electron dynamics of carbon dots using time-resolved photoluminescence. We found that sample with higher emission has longer electron decay time. Our finding gives optimum condition of carbon dots fabrication from coconut fiber using laser ablation technique. Moreover, fabricated carbon dots are non-toxic nanoparticles that can be applied for health, bio-tagging and medical applications.

  16. Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs cylindrically shaped quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Duque, C.M.; Morales, A.L. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Mora-Ramos, M.E. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

    2014-10-15

    An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs.

  17. Strategy for synthesizing quantum dot-layered double hydroxide nanocomposites and their enhanced photoluminescence and photostability.

    Science.gov (United States)

    Cho, Seungho; Jung, Sungwook; Jeong, Sanghwa; Bang, Jiwon; Park, Joonhyuck; Park, Youngrong; Kim, Sungjee

    2013-01-08

    Layered double hydroxide-quantum dot (LDH-QD) composites are synthesized via a room temperature LDH formation reaction in the presence of QDs. InP/ZnS (core/shell) QD, a heavy metal free QD, is used as a model constituent. Interactions between QDs (with negative zeta potentials), decorated with dihydrolipoic acids, and inherently positively charged metal hydroxide layers of LDH during the LDH formations are induced to form the LDH-QD composites. The formation of the LDH-QD composites affords significantly enhanced photoluminescence quantum yields and thermal- and photostabilities compared to their QD counterparts. In addition, the fluorescence from the solid LDH-QD composite preserved the initial optical properties of the QD colloid solution without noticeable deteriorations such as red-shift or deep trap emission. Based on their advantageous optical properties, we also demonstrate the pseudo white light emitting diode, down-converted by the LDH-QD composites.

  18. Tunable photoluminescence of CsPbBr3 perovskite quantum dots for light emitting diodes application

    Science.gov (United States)

    Chen, Weiwei; Xin, Xing; Zang, Zhigang; Tang, Xiaosheng; Li, Cunlong; Hu, Wei; Zhou, Miao; Du, Juan

    2017-11-01

    All-inorganic cesium lead halide (CsPbBr3) perovskite quantum dots (QDs), as one kind of promising materials, have attracted considerable attention in optoelectronic applications. Herein, we synthesized the colloidal CsPbBr3 QDs with tunable photoluminescence (PL) (493-531 nm) by adjusting the reaction temperatures, which revealed narrow emission bandwidths of about 25 nm. The average diameters of the QDs could be adjusted from 7.1 to 12.3 nm as the temperature increased from 100 °C to 180 °C. Moreover, the radiative lifetimes of CsPbBr3 QDs were measured to be 2 ns, and the single QD fluorescence intensity time trace results demonstrated its suppressed blinking emission. Moreover, green light emitting diodes by using CsPbBr3 QDs casted on blue LED chips were further fabricated, which provided potential applications in the field of display and lighting technology.

  19. Fast synthesize ZnO quantum dots via ultrasonic method.

    Science.gov (United States)

    Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-05-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. Near-infrared InN quantum dots on high-In composition InGaN

    Energy Technology Data Exchange (ETDEWEB)

    Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2013-04-01

    We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

  1. Photoluminescence of hybrid quantum dot systems

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2015-01-01

    Roč. 7, č. 4 (2015), 347-349 ISSN 2164-6627 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * energy transfer * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism

  2. Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates

    International Nuclear Information System (INIS)

    Brehm, Moritz; Grydlik, Martyna; Tayagaki, Takeshi; Schmidt, Oliver G; Langer, Gregor; Schäffler, Friedrich

    2015-01-01

    We investigate the optical properties of ordered Ge quantum dots (QDs) by means of micro-photoluminescence spectroscopy (PL). These were grown on pit-patterned Si(001) substrates with a wide range of pit-periods and thus inter QD-distances (425–3400 nm). By exploiting almost arbitrary inter-QD distances achievable in this way we are able to choose the number of QDs that contribute to the PL emission in a range between 70 and less than three QDs. This well-defined system allows us to clarify, by PL-investigation, several points which are important for the understanding of the formation and optical properties of ordered QDs. We directly trace and quantify the amount of Ge transferred from the surrounding wetting layer (WL) to the QDs in the pits. Moreover, by exploiting different pit-shapes, we reveal the role of strain-induced activation energy barriers that have to be overcome for charge carriers generated outside the dots. These need to diffuse between the energy minimum of the WL in and between the pits, and the one in the QDs. In addition, we demonstrate that the WL in the pits is already severely intermixed with Si before upright QDs nucleate, which further enhances intermixing of ordered QDs as compared to QDs grown on planar substrates. Furthermore, we quantitatively determine the amount of Ge transferred by surface diffusion through the border region between planar and patterned substrate. This is important for the growth of ordered islands on patterned fields of finite size. We highlight that the Ge WL-facets in the pits act as PL emission centres, similar to upright QDs. (paper)

  3. Aqueous synthesis of highly luminescent glutathione-capped Mn{sup 2+}-doped ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Kolmykov, Oleksii [Université de Lorraine, Laboratoire Réactions et Génie des Procédés (LRGP), UMR 7274, CNRS, 1 rue Grandville, BP 20451, 54001 Nancy Cedex (France); Coulon, Joël [Université de Lorraine, Laboratoire de Chimie Physique et Microbiologie pour l' Environnement (LCPME), UMR 7564, CNRS, Faculté de Pharmacie, 5 rue Albert Lebrun, 54000 Nancy (France); Lalevée, Jacques [Institut de Science des Matériaux de Mulhouse (IS2M), UMR 7361, CNRS, 15 rue Jean Starcky, 68093 Mulhouse (France); Alem, Halima; Medjahdi, Ghouti [Université de Lorraine, Institut Jean Lamour (IJL), UMR 7198, CNRS, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Schneider, Raphaël, E-mail: raphael.schneider@univ-lorraine.fr [Université de Lorraine, Laboratoire Réactions et Génie des Procédés (LRGP), UMR 7274, CNRS, 1 rue Grandville, BP 20451, 54001 Nancy Cedex (France)

    2014-11-01

    In this paper, an aqueous-based route has been developed to prepare highly luminescent glutathione (GSH)-capped Mn-doped ZnS quantum dots (QDs). The dots obtained have an average diameter of 4.3 nm and exhibit the Mn{sup 2+}-related orange luminescence with very low surface defect density. The highest photoluminescence was observed for a Mn{sup 2+} to Zn{sup 2+} molar ratio of 3%. Consecutive overcoating of the Mn:ZnS@GSH QDs by a ZnS shell was done, and the core/shell structured QDs exhibit a PL quantum yield of 23%. Transmission electron microscopy, X-ray powder diffraction, electron spin resonance, X-ray photoelectron spectroscopy, UV–visible spectroscopy and spectrofluorometry have been used to characterize the crystal structure, the doping status, and the optical properties of the doped-QDs. Our systematic investigation shows that Mn:ZnS/ZnS@GSH QDs are highly promising fluorescent labels in biological applications.

  4. Time-resolved x-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption

    International Nuclear Information System (INIS)

    Kakuda, Naoki; Yamaguchi, Koichi; Kaizu, Toshiyuki; Takahasi, Masamitu; Fujikawa, Seiji

    2010-01-01

    Self-assembly of high-density InAs quantum dots (QDs) on Sb-irradiated GaAs buffer layers was observed in-situ by a time-resolved X-ray diffraction (XRD) technique using a combination of XRD and molecular beam epitaxy. Evolution of dot height and lattice constant was analyzed during InAs QD growth and subsequent growth interruption (GI), and as a result, dislocated giant dots due to coalescence and coherent dots were separately evaluated. An Sb-irradiated GI (Sb-GI) method to be applied after InAs growth was attempted for the suppression of coalescence. Using this method, the XRD intensity of giant dots decreased, and the photoluminescence intensity of InAs QDs was enhanced. High-density InAs QDs without giant dots were produced by using the combination of the QD growth on the Sb-irradiated GaAs buffer layers and the Sb-GI. (author)

  5. Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices

    KAUST Repository

    Majid, Mohammed Abdul

    2012-12-01

    The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.

  6. Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices

    KAUST Repository

    Majid, Mohammed Abdul; Hugues, M.; Vézian, S.; Childs, D. T. D.; Hogg, R. A.

    2012-01-01

    The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.

  7. Size quantization patterns in self-assembled InAs/GaAs quantum dots

    Science.gov (United States)

    Colocci, M.; Bogani, F.; Carraresi, L.; Mattolini, R.; Bosacchi, A.; Franchi, S.; Frigeri, P.; Taddei, S.; Rosa-Clot, M.

    1997-07-01

    Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spot diameter ≈ 100 μm) results in structured photoluminescence spectra; a clear quantization of the dot sizes is deduced from the distinct luminescence bands separated in energy by an average spacing of 20-30 meV. We ascribe the individual bands of the photoluminescence spectrum after low excitation to families of dots with roughly the same diameter and heights differing by one monolayer.

  8. The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100)

    International Nuclear Information System (INIS)

    Hakkarainen, T V; Polojärvi, V; Schramm, A; Tommila, J; Guina, M

    2012-01-01

    We report on the effect of post-growth thermal annealing of [011]-, [01 1-bar ]-, and [010]-oriented quantum dot chains grown by molecular beam epitaxy on GaAs(100) substrates patterned by UV-nanoimprint lithography. We show that the quantum dot chains experience a blueshift of the photoluminescence energy, spectral narrowing, and a reduction of the intersubband energy separation during annealing. The photoluminescence blueshift is more rapid for the quantum dot chains than for self-assembled quantum dots that were used as a reference. Furthermore, we studied polarization resolved photoluminescence and observed that annealing reduces the intrinsic optical anisotropy of the quantum dot chains and the self-assembled quantum dots. (paper)

  9. Mechanofluorochromic Carbon Nanodots: Controllable Pressure-Triggered Blue- and Red-Shifted Photoluminescence.

    Science.gov (United States)

    Liu, Cui; Xiao, Guanjun; Yang, Mengli; Zou, Bo; Zhang, Zhi-Ling; Pang, Dai-Wen

    2018-02-12

    Mechanofluorochromic materials, which change their photoluminescence (PL) colors in responding to mechanical stimuli, can be used as mechanosensors, security papers, and photoelectronic devices. However, traditional mechanofluorochromic materials can only be adjusted to a monotone direction upon the external stimuli. Controllable pressure-triggered blue- and red-shifted PL is reported for C-dots. The origin of mechanofluorochromism (MFC) in C-dots is interpreted based on structure-property relationships. The carbonyl group and the π-conjugated system play key roles in the PL change of C-dots under high pressure. As the pressure increases, the enhanced π-π stacking of the π-conjugated system causes the red-shift of PL, while the conversion of carbonyl groups eventually induces a blue-shift. Together with their low toxicity, good hydrophilicity, and small size, the tunable MFC property would boost various potential applications of C-dots. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Linewidth statistics of single InGaAs quantum dot photolumincescence lines

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    2000-01-01

    We have used photoluminescence spectroscopy with high spatial and spectral resolution to measure the linewidths of single emission lines from In0.5Ga0.5As/GaAs self-assembled quantum dots. At 10 K, we find a broad, asymmetric distribution of linewidths with a maximum at 50 mu eV. The distribution......-dot luminescence lines depends only weakly on temperature up to 50 K, showing a broadening of 0.4 mu eV/K. Above 50 K, a thermally activated behavior of the linewidth is observed. This temperature dependence is consistent with the discrete energy level structure of the dots....

  11. A label-free silicon quantum dots-based photoluminescence sensor for ultrasensitive detection of pesticides.

    Science.gov (United States)

    Yi, Yinhui; Zhu, Gangbing; Liu, Chang; Huang, Yan; Zhang, Youyu; Li, Haitao; Zhao, Jiangna; Yao, Shouzhuo

    2013-12-03

    Sensitive, rapid, and simple detection methods for the screening of extensively used organophosphorus pesticides and highly toxic nerve agents are in urgent demand. A novel label-free silicon quantum dots (SiQDs)-based sensor was designed for ultrasensitive detection of pesticides. This sensing strategy involves the reaction of acetylcholine chloride (ACh) with acetylcholinesterase (AChE) to form choline that is in turn catalytically oxidized by choline oxidase (ChOx) to produce betaine and H2O2 which can quench the photoluminescence (PL) of SiQDs. Upon the addition of pesticides, the activity of AChE is inhibited, leading to the decrease of the generated H2O2, and hence the PL of SiQDs increases. By measuring the increase in SiQDs PL, the inhibition efficiency of pesticide to AChE activity was evaluated. It was found that the inhibition efficiency was linearly dependent on the logarithm of the pesticides concentration. Consequently, pesticides, such as carbaryl, parathion, diazinon, and phorate, were determined with the SiQDs PL sensing method. The lowest detectable concentrations for carbaryl, parathion, diazinon, and phorate reached 7.25 × 10(-9), 3.25 × 10(-8), 6.76 × 10(-8), and 1.9 × 10(-7) g/L, respectively, which were much lower than those previously reported. The detecting results of pesticide residues in food samples via this method agree well with those from high-performance liquid chromatography. The simple strategy reported here should be suitable for on-site pesticides detection, especially in combination with other portable platforms.

  12. Assessment of quantum dots concentrators for photovoltaic electricity production; Evaluation du potentiel de concentrateurs a quantum dots pour la production d'electricite photovoltaique. Rapport final

    Energy Technology Data Exchange (ETDEWEB)

    Schueler, A; Kostro, A; Huriet, B

    2006-07-01

    One of the most promising application of semiconductor nanostructures in the field of photovoltaics might be planar photoluminescent concentrators. Even for diffuse solar radiation, considerable concentration factors might be achieved. Such devices have originally been designed on the basis of organic dyes and might benefit from a considerably improved lifetime when replacing the organic fluorescent substances by inorganic semiconductor nanocrystals, so-called quantum dots. Quantum dot containing nanocomposite thin films are synthesized at EPFL-LESO by a low cost sol-gel process. In order to study the potential of the use of quantum dot solar concentrators in photovoltaic solar energy conversion, reliable computer simulations are needed. A tool for ray tracing simulations of quantum dot solar concentrators has been developed at EPFL-LESO on the basis of Monte-Carlo methods that are applied to polarization-dependent reflection/transmission at interfaces, photon absorption by the semiconductor nanocrystals and photoluminescent re-emission. Together with the knowledge on the optoelectronical properties of suitable photovoltaic cells, such simulations allow to predict the total efficiency of the envisaged concentrating PV systems, and to optimize pane dimensions, photoluminescent emission frequencies, and choice of PV cell types. (author)

  13. Electric Field Modulation of Semiconductor Quantum Dot Photoluminescence: Insights Into the Design of Robust Voltage-Sensitive Cellular Imaging Probes.

    Science.gov (United States)

    Rowland, Clare E; Susumu, Kimihiro; Stewart, Michael H; Oh, Eunkeu; Mäkinen, Antti J; O'Shaughnessy, Thomas J; Kushto, Gary; Wolak, Mason A; Erickson, Jeffrey S; Efros, Alexander L; Huston, Alan L; Delehanty, James B

    2015-10-14

    The intrinsic properties of quantum dots (QDs) and the growing ability to interface them controllably with living cells has far-reaching potential applications in probing cellular processes such as membrane action potential. We demonstrate that an electric field typical of those found in neuronal membranes results in suppression of the QD photoluminescence (PL) and, for the first time, that QD PL is able to track the action potential profile of a firing neuron with millisecond time resolution. This effect is shown to be connected with electric-field-driven QD ionization and consequent QD PL quenching, in contradiction with conventional wisdom that suppression of the QD PL is attributable to the quantum confined Stark effect.

  14. Core–shell quantum dots: Properties and applications

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, D., E-mail: vasudevand@rediffmail.com [Electrodics and electrocatalysis division, CSIR-CECRI, Karaikudi 630006 (India); Gaddam, Rohit Ranganathan [Amity Institute of Nanotechnology, Amity University, Noida 201301 (India); Trinchi, Adrian; Cole, Ivan [CSIRO Materials Science and Engineering, Clayton South MDC, 3169 (Australia)

    2015-07-05

    Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis.

  15. Core–shell quantum dots: Properties and applications

    International Nuclear Information System (INIS)

    Vasudevan, D.; Gaddam, Rohit Ranganathan; Trinchi, Adrian; Cole, Ivan

    2015-01-01

    Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis

  16. Dark-red-emitting CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots: Effect of chemicals on properties

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ping, E-mail: mse_yangp@ujn.edu.cn; Zhang, Aiyu; Li, Xiaoyu; Liu, Ning; Zhang, Yulan; Zhang, Ruili

    2013-08-15

    CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution. - Graphical abstract: CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots (QDs) with tunable photoluminescence, high PL efficiency, and high stability through organic synthesis, in which chemicals affected the properties of the QDs. Display Omitted - Highlights: • CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots created via organic synthesis. • Chemicals affected the properties of the quantum dots. • The quantum dots revealed high photoluminescence efficiency and stability. • The quantum dots with tunable photoluminescence in a range from yellow to dark red. • The QDs are utilizable for various applications such as biological labeling.

  17. Optical anisotropy in vertically coupled quantum dots

    DEFF Research Database (Denmark)

    Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan

    1999-01-01

    We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....

  18. Assessment of quantum dots concentrators for photovoltaic electricity production; Evaluation du potentiel de concentrateurs a quantum dots pour la production d'electricite photovoltaique. Rapport final

    Energy Technology Data Exchange (ETDEWEB)

    Schueler, A.; Kostro, A.; Huriet, B.

    2006-07-01

    One of the most promising application of semiconductor nanostructures in the field of photovoltaics might be planar photoluminescent concentrators. Even for diffuse solar radiation, considerable concentration factors might be achieved. Such devices have originally been designed on the basis of organic dyes and might benefit from a considerably improved lifetime when replacing the organic fluorescent substances by inorganic semiconductor nanocrystals, so-called quantum dots. Quantum dot containing nanocomposite thin films are synthesized at EPFL-LESO by a low cost sol-gel process. In order to study the potential of the use of quantum dot solar concentrators in photovoltaic solar energy conversion, reliable computer simulations are needed. A tool for ray tracing simulations of quantum dot solar concentrators has been developed at EPFL-LESO on the basis of Monte-Carlo methods that are applied to polarization-dependent reflection/transmission at interfaces, photon absorption by the semiconductor nanocrystals and photoluminescent re-emission. Together with the knowledge on the optoelectronical properties of suitable photovoltaic cells, such simulations allow to predict the total efficiency of the envisaged concentrating PV systems, and to optimize pane dimensions, photoluminescent emission frequencies, and choice of PV cell types. (author)

  19. Fine structure and optical pumping of spins in individual semiconductor quantum dots

    Science.gov (United States)

    Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

    2008-11-01

    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

  20. Fine structure and optical pumping of spins in individual semiconductor quantum dots

    International Nuclear Information System (INIS)

    Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L

    2008-01-01

    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

  1. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S. [Department of Electronic Science, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2014-01-28

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of

  2. Carrier dynamics in submonolayer InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Zhang, Yating; Hvam, Jørn Märcher

    2006-01-01

    Carrier dynamics of submonolayer InGaAs/GaAs quantum dots (QDs) were studied by microphotoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon...

  3. Composition-dependent photoluminescence properties of CuInS_2/ZnS core/shell quantum dots

    International Nuclear Information System (INIS)

    Hua, Jie; Du, Yuwei; Wei, Qi; Yuan, Xi; Wang, Jin; Zhao, Jialong; Li, Haibo

    2016-01-01

    CuInS_2/ZnS (CIS/ZnS) core/shell quantum dots (QDs) with various Cu/In ratios were synthesized using the hot-injection method, and their photoluminescence (PL) properties were investigated by measuring steady-state and time-resolved PL spectroscopy. The emission peak of the CIS/ZnS QDs were tuned from 680 to 580 nm by decreasing the Cu/In precursor ratio from 1/1 to 1/9. As the Cu/In ratio decreases, the PL lifetimes and PL quantum yields (QYs) of CIS/ZnS core/shell QDs increased firstly and then decreased. Two dominant radiative recombination processes were postulated to analyze composition-dependent PL properties, including the recombination from a quantized conduction band to deep defects state and donor-acceptor pair (DAP) recombination. The decrease of PL efficiency resulted from high density defects and traps, which formed at the interface between CIS core and ZnS shell due to the large off-stoichiometry composition. The PL intensity and peak energy for CIS/ZnS core/shell QDs as a function of temperature were also provided. The thermal quenching further confirmed that the PL emission of CIS/ZnS QDs did not come from the recombination of excitons but from the recombination of many kinds of intrinsic defects inside the QDs as emission centers.

  4. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  5. Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.

    Science.gov (United States)

    de Weerd, Chris; Shin, Yonghun; Marino, Emanuele; Kim, Joosung; Lee, Hyoyoung; Saeed, Saba; Gregorkiewicz, Tom

    2017-10-31

    Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other applications. Ideal materials for these applications should feature efficient radiative recombination and absorption transitions, altogether with spectral tunability over a wide range. Group IV semiconductor quantum dots can fulfill these requirements and serve as an alternative to the commonly used direct bandgap materials containing toxic and/or rare elements. Here, we present optical properties of butyl-terminated Si and Ge quantum dots and compare them to those of graphene quantum dots, finding them remarkably similar. We investigate their time-resolved photoluminescence emission as well as the photoluminescence excitation and linear absorption spectra. We contemplate that their emission characteristics indicate a (semi-) resonant activation of the emitting channel; the photoluminescence excitation shows characteristics similar to those of a molecule. The optical density is consistent with band-to-band absorption processes originating from core-related states. Hence, these observations strongly indicate a different microscopic origin for absorption and radiative recombination in the three investigated quantum dot systems.

  6. Ultrafast spontaneous emission modulation of graphene quantum dots interacting with Ag nanoparticles in solution

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jianwei [Department of Physics, Shanghai University, Shanghai 200444 (China); Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); Lu, Jian, E-mail: luj@sari.ac.cn; Wang, Zhongyang, E-mail: wangzy@sari.ac.cn [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); Wang, Liang [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 200444 (China); Tian, Linfan [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210 (China); Deng, Xingxia [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Tian, Lijun [Department of Physics, Shanghai University, Shanghai 200444 (China); Pan, Dengyu [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China)

    2016-07-11

    We investigated the strong interaction between graphene quantum dots and silver nanoparticles in solution using time-resolved photoluminescence techniques. In solution, the silver nanoparticles are surrounded by graphene quantum dots and interacted with graphene quantum dots through exciton-plasmon coupling. An ultrafast spontaneous emission process (lifetime 27 ps) was observed in such a mixed solution. This ultrafast lifetime corresponds to the emission rate exceeding 35 GHz, with the purcell enhancement by a factor of ∼12. These experiment results pave the way for the realization of future high speed light sources applications.

  7. Optical Pumping of the Electronic and Nuclear Spin of Single Charge-Tunable Quantum Dots

    Science.gov (United States)

    Bracker, A. S.; Stinaff, E. A.; Gammon, D.; Ware, M. E.; Tischler, J. G.; Shabaev, A.; Efros, Al. L.; Park, D.; Gershoni, D.; Korenev, V. L.; Merkulov, I. A.

    2005-02-01

    We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.

  8. Highly Luminescent Water-Dispersible NIR-Emitting Wurtzite CuInS2/ZnS Core/Shell Colloidal Quantum Dots

    NARCIS (Netherlands)

    Xia, Chenghui; Meeldijk, Johannes D.; Gerritsen, Hans C.; De Mello Donega, Celso

    2017-01-01

    Copper indium sulfide (CIS) quantum dots (QDs) are attractive as labels for biomedical imaging, since they have large absorption coefficients across a broad spectral range, size- and composition-tunable photoluminescence from the visible to the near-infrared, and low toxicity. However, the

  9. Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Rihani, J.; Sedrine, N.B.; Sallet, V.; Oueslati, M.; Chtourou, R.

    2008-01-01

    InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 deg. C). With increasing excitation density, the ground-state transition energy is found to decrease by 8 meV, while the excited-state transition energies exhibit resonance behaviour. The redshift of the ground-state emission was related to the band-gap renomalization (BGR) effect whereas the blueshift of the excited-state emissions was assigned to the compensation between filling of fine structure states and BGR effects. Using a quasi-resonant PL measurement, we have shown that the renormalization of the band-gap had to occur in the QD barrier

  10. The synthesis of CdSe quantum dots with carboxyl group and study on their optical characteristics

    International Nuclear Information System (INIS)

    Ye, Chen; Park, Sangjoon; Kim, Jongsung

    2009-01-01

    Quantum dots are nanocrystal semiconductors which attract lots of research interests due to their peculiar optical properties. CdSe/ZnS quantum dots have been synthesized via pyrolysis of organometallic reagents. The color of the quantum dot changes from yellow-green to red as their size increases with reaction time. Photoluminescence quantum efficiency of CdSe quantum dots have been enhanced by passivating the surface of CdSe quantum dots with ZnS layers. Quantum dots are nanocrystal semiconductors which attract lots of research interests due to their peculiar optical properties. CdSe/ZnS quantum dots have been synthesized via pyrolysis of organometallic reagents. The color of the quantum dot changes from yellow-green to red as their size increases with reaction time. Photoluminescence quantum efficiency of CdSe quantum dots have been enhanced by passivating the surface of CdSe quantum dots with ZnS layers. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Polytypism and band alignment in ZnSe nanowires revealed by photoluminescence spectroscopy of embedded (Zn,Cd)Se quantum dots

    Science.gov (United States)

    Bieker, S.; Pfeuffer, R.; Kiessling, T.; Tarakina, N.; Schumacher, C.; Ossau, W.; Molenkamp, L. W.; Karczewski, G.

    2015-03-01

    We report on the optical characterization of single (Zn,Cd)Se quantum dots (QDs) embedded in vapor-liquid-solid-grown ZnSe nanowires (NWs). The temperature dependent quenching of the QD luminescence demonstrates that their electronic structure is comparable to that of self-assembled (Zn,Cd)Se QDs in ZnSe matrices. The photoluminescence excitation (PLE) spectrum of single nanowire QDs reveals the presence of both zinc blende (ZB) and wurtzite (WZ) crystal modifications of ZnSe in the NW shafts. PLE provides, therefore, a complementary technique to transmission electron microscopy imaging to reveal polytypism in ZnSe NWs. A transient quenching of the PL emission suggests a type II staggered band alignment at the ZB/WZ interface in our ZnSe NWs.

  12. Spin interactions in InAs quantum dots and molecules

    Energy Technology Data Exchange (ETDEWEB)

    Doty, M.F.; Ware, M.E.; Stinaff, E.A.; Scheibner, M.; Bracker, A.S.; Ponomarev, I.V.; Badescu, S.C.; Reinecke, T.L.; Gammon, D. [Naval Research Lab, Washington, DC 20375 (United States); Korenev, V.L. [A.F. Ioffe Physical Technical Institute, St. Petersburg 194021 (Russian Federation)

    2006-12-15

    Spin interactions between particles in quantum dots or quantum dot molecules appear as fine structure in the photoluminescence spectra. Using the understanding of exchange interactions that has been developed from single dot spectra, we analyze the spin signatures of coupled quantum dots separated by a wide barrier such that inter-dot interactions are negligible. We find that electron-hole exchange splitting is directly evident. In dots charged with an excess hole, an effective hole-hole interaction can be turned on through tunnel coupling. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Birkedal, Dan; Hvam, Jørn Märcher

    2003-01-01

    A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki-Taupin...

  14. Influence of hydrogen peroxide on the stability and optical properties of CdS quantum dots in gelatin

    Energy Technology Data Exchange (ETDEWEB)

    Klyuev, V.G.; Volykhin, D.V., E-mail: volykhin.d@ya.ru; Ivanova, A.A.

    2017-03-15

    Influence of hydrogen peroxide on the stability and optical characteristics of CdS quantum dots obtained by aqueous synthesis in gelatin is investigated. It is shown that the action of hydrogen peroxide on the CdS quantum dots reduces the average particle size, increases monodispersity of particle size distribution, and also increases the photoluminescence intensity. A model that explains the behavior of CdS quantum dots photoluminescence with a decrease of particle size as a result of treatment with hydrogen peroxide is presented.

  15. Optical pumping of electron and nuclear spin in a negatively-charged quantum dot

    Science.gov (United States)

    Bracker, Allan; Gershoni, David; Korenev, Vladimir

    2005-03-01

    We report optical pumping of electron and nuclear spins in an individual negatively-charged quantum dot. With a bias-controlled heterostructure, we inject one electron into the quantum dot. Intense laser excitation produces negative photoluminescence polarization, which is easily erased by the Hanle effect, demonstrating optical pumping of a long-lived resident electron. The electron spin lifetime is consistent with the influence of nuclear spin fluctuations. Measuring the Overhauser effect in high magnetic fields, we observe a high degree of nuclear spin polarization, which is closely correlated to electron spin pumping.

  16. Phosphorene quantum dots

    Science.gov (United States)

    Vishnoi, Pratap; Mazumder, Madhulika; Barua, Manaswee; Pati, Swapan K.; Rao, C. N. R.

    2018-05-01

    Phosphorene, a two-dimensional material, has been a subject of recent investigations. In the present study, we have prepared blue fluorescent phosphorene quantum dots (PQDs) by liquid phase exfoliation of black phosphorus in two non-polar solvents, toluene and mesitylene. The average particle sizes of PQDs decrease from 5.0 to 1.0 nm on increasing the sonicator power from 150 to 225 W. The photoluminescence spectrum of the PQDs is red-shifted in the 395-470 nm range on increasing the excitation-wavelength from 300 to 480 nm. Electron donor and acceptor molecules quench the photoluminescence, with the acceptors showing more marked effects.

  17. Reduced reabsorption and enhanced propagation induced by large Stokes shift in quantum dot-filled optical fiber

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hua; Zhang, Yu, E-mail: yuzhang@jlu.edu.cn; Lu, Min; Liu, Wenyan [Jilin University, State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering (China); Xu, Jian [The Pennsylvania State University, Department of Engineering Science and Mechanics (United States); Yu, William W., E-mail: wyu6000@gmail.com [Jilin University, State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering (China)

    2016-07-15

    With tunable emission wavelength, high photoluminescence quantum yield, and broad absorption, colloidal quantum dots are attractive for the application in optical fiber as dopants. However, most of the quantum dots have a large overlap between their absorption and photoluminescence spectra, resulting in reabsorption loss which hinders the realization of long-distance waveguides. Therefore, ZnCuInS/ZnSe/ZnS quantum dots with large Stokes shift were proposed to fabricate a liquid-core optical fiber in this work. In this work, ZnCuInS/ZnSe/ZnS QDs with an average size of 3.3 nm were synthesized and the optical properties of the QD-filled fiber were also investigated as a function of fiber length and doping concentration. Compared to the control sample filled with CdSe/CdS/ZnS quantum dots, the ZnCuInS/ZnSe/ZnS quantum dot-based waveguides showed reduced reabsorption and enhanced signal propagation, which demonstrates great potential of large Stokes-shift quantum dots in optical waveguide devices.Graphical AbstractA reduced reabsorption and enhanced propagation of ZnCuInS/ZnSe/ZnS QDs-doped liquid-core optical fiber was achieved due to the large Stokes shift.

  18. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    International Nuclear Information System (INIS)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M.; Chen, D. D.; Xu, F.

    2014-01-01

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488 nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325 nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  19. Synthetic Control of Exciton Behavior in Colloidal Quantum Dots.

    Science.gov (United States)

    Pu, Chaodan; Qin, Haiyan; Gao, Yuan; Zhou, Jianhai; Wang, Peng; Peng, Xiaogang

    2017-03-08

    Colloidal quantum dots are promising optical and optoelectronic materials for various applications, whose performance is dominated by their excited-state properties. This article illustrates synthetic control of their excited states. Description of the excited states of quantum-dot emitters can be centered around exciton. We shall discuss that, different from conventional molecular emitters, ground-state structures of quantum dots are not necessarily correlated with their excited states. Synthetic control of exciton behavior heavily relies on convenient and affordable monitoring tools. For synthetic development of ideal optical and optoelectronic emitters, the key process is decay of band-edge excitons, which renders transient photoluminescence as important monitoring tool. On the basis of extensive synthetic developments in the past 20-30 years, synthetic control of exciton behavior implies surface engineering of quantum dots, including surface cation/anion stoichiometry, organic ligands, inorganic epitaxial shells, etc. For phosphors based on quantum dots doped with transition metal ions, concentration and location of the dopant ions within a nanocrystal lattice are found to be as important as control of the surface states in order to obtain bright dopant emission with monoexponential yet tunable photoluminescence decay dynamics.

  20. The pH-dependent photoluminescence of colloidal CdSe/ZnS quantum dots with different organic coatings

    International Nuclear Information System (INIS)

    Debruyne, David; Locquet, Jean-Pierre; Van Bael, Margriet J; Deschaume, Olivier; Bartic, Carmen; Coutiño-Gonzalez, Eduardo; Hofkens, Johan

    2015-01-01

    The photoluminescence (PL) of colloidal quantum dots (QDs) is known to be sensitive to the solution pH. In this work we investigate the role played by the organic coating in determining the pH-dependent PL. We compare two types of CdSe/ZnS QDs equipped with different organic coatings, namely dihydrolipoic acid (DHLA)-capped QDs and phospholipid micelle-encapsulated QDs. Both QD types have their PL intensity quenched at acidic pH values, but they differ in terms of the reversibility of the quenching process. For DHLA-capped QDs, the quenching is nearly irreversible, with a small reversible component visible only on short time scales. For phospholipid micelle-encapsulated QDs the quenching is notably almost fully reversible. We suggest that the surface passivation by the organic ligands is reversible for the micelle-encapsulated QDs. Additionally, both coatings display pH-dependent spectral shifts. These shifts can be explained by a combination of irreversible processes, such as photo-oxidation and acid etching, and reversible charging of the QD surface, leading to the quantum-confined Stark effect (QCSE), the extent of each effect being coating-dependent. At high ionic strengths, the aggregation of QDs also leads to a spectral (red) shift, which is attributable to the QCSE and/or electronic energy transfer. (paper)

  1. Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, Kristjan; Birkedal, Dan

    2002-01-01

    We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction....

  2. Fast and Straightforward Synthesis of Luminescent Titanium(IV Dioxide Quantum Dots

    Directory of Open Access Journals (Sweden)

    Václav Štengl

    2017-01-01

    Full Text Available The nucleus of titania was prepared by reaction of solution titanium oxosulphate with hydrazine hydrate. These titania nuclei were used for titania quantum dots synthesis by a simple and fast method. The prepared titanium(IV dioxide quantum dots were characterized by measurement of X-ray powder diffraction (XRD, X-ray photoelectron spectroscopy (XPS, atomic force microscopy (AFM, high-resolution electron microscopy (HRTEM, and selected area electron diffraction (SAED. The optical properties were determined by photoluminescence (PL spectra. The prepared titanium(IV dioxide quantum dots have the narrow range of UV excitation (365–400 nm and also a close range of emission maxima (450–500 nm.

  3. Electroluminescence of colloidal ZnSe quantum dots

    International Nuclear Information System (INIS)

    Dey, S.C.; Nath, S.S.

    2011-01-01

    The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet). - Highlights: → Synthesis of ZnSe quantum dots by a green chemical route. → Characterisation: UV-vis absorption spectroscopy and transmission electron microscopy. → Analysis of UV-vis absorption spectrum and transmission electron micrographs. → Study of electro-optical properties by photoluminescence and electroluminescence. → Conclusion: ZnSe quantum dots can be used as LED with dual colour emission.

  4. High-density InAs/GaAs{sub 1−x}Sb{sub x} quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Debnath, M. C., E-mail: mdebnath@cnsi.ucla.edu [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States); California NanoSystems Institute and Electrical Engineering Department, University of California-Los Angeles (UCLA), Los Angeles, California 90095 (United States); Mishima, T. D.; Santos, M. B.; Cheng, Y.; Whiteside, V. R.; Sellers, I. R. [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States); Hossain, K. [Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); Laghumavarapu, R. B.; Liang, B. L.; Huffaker, D. L. [California NanoSystems Institute and Electrical Engineering Department, University of California-Los Angeles (UCLA), Los Angeles, California 90095 (United States)

    2016-03-21

    InAs quantum-dot structures were grown using a GaAs{sub 1−x}Sb{sub x} matrix on a GaAs(001) substrate. The use of GaAs{sub 1−x}Sb{sub x} for the buffer and cap layers effectively suppressed coalescence between dots and significantly increased the dot density. The highest density (∼3.5 × 10{sup 11}/cm{sup 2}) was obtained for a nominal 3.0 monolayer deposition of InAs with an Sb composition of x = 13–14% in the GaAs{sub 1−x}Sb{sub x} matrix. When the Sb composition was increased to 18%, the resulting large photoluminescent red shift (∼90 meV) indicated the release of compressive strain inside the quantum dots. For x > 13%, we observed a significant decrease in photoluminescence intensity and an increase in the carrier lifetime (≥4.0 ns). This is attributed to the type-II band alignment between the quantum dots and matrix material.

  5. Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingmin, E-mail: konglm@qq.com [School of Marine Science and Technology, Zhejiang Ocean University, Zhoushan 316000 (China); Sun, Wei [SEM School of Electromechanical Engineering, Weifang Engineering Vocational College, Qingzhou 262500 (China); Feng, Zhe Chuan, E-mail: zcfeng@nut.edu.tw [Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan (China); Xie, Sheng [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian [Department of Physics, Zhejiang Ocean University, Zhoushan 316000 (China); Wu, Zhengyun [Department of Physics, Xiamen University, Xiamen 361005 China (China)

    2014-07-01

    Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs. - Highlights: • InAs quantum dots (QDs) were grown on GaAs. • A thin InAlAs layer was grown on InAs QDs. • Temperature dependent photoluminescence (PL) and time-resolved PL were carried out. • Both a redshift and a double exponential decay of PL emission were generated by the InAlAs layer.

  6. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

    KAUST Repository

    Zhang, Meng

    2011-05-01

    InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

  7. Multi-Excitonic Quantum Dot Molecules

    Science.gov (United States)

    Scheibner, M.; Stinaff, E. A.; Doty, M. F.; Ware, M. E.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    With the ability to create coupled pairs of quantum dots, the next step towards the realization of semiconductor based quantum information processing devices can be taken. However, so far little knowledge has been gained on these artificial molecules. Our photoluminescence experiments on single InAs/GaAs quantum dot molecules provide the systematics of coupled quantum dots by delineating the spectroscopic features of several key charge configurations in such quantum systems, including X, X^+,X^2+, XX, XX^+ (with X being the neutral exciton). We extract general rules which determine the formation of molecular states of coupled quantum dots. These include the fact that quantum dot molecules provide the possibility to realize various spin configurations and to switch the electron hole exchange interaction on and off by shifting charges inside the molecule. This knowledge will be valuable in developing implementations for quantum information processing.

  8. Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Stobbe, Søren; Schneider, C.

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  9. Photoluminescence of colloidal CdSe nano-tetrapods and quantum dots in oxygenic and oxygen-free environments

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Lijuan [Donghua University, Applied Physics Department, Shanghai (China); Hong Kong University of Science and Technology, Physics Department and the Institute of Nano-Science and Technology, Hong Kong (China); Pang, Qi; Ge, Weikun; Wang, Jiannong [Hong Kong University of Science and Technology, Physics Department and the Institute of Nano-Science and Technology, Hong Kong (China); Yang, Shihe [Hong Kong University of Science and Technology, Chemistry Department and the Institute of Nano-Science and Technology, Hong Kong (China)

    2011-05-15

    The effects of oxygenic versus oxygen-free environments on colloidal CdSe nano-tetrapods and quantum dots (QDs) were studied using both continuous and time-resolved photoluminescence (PL) measurements. The decays of PL intensities for tetrapods and QDs in oxygen-free solution (chloroform) and in air (on silicon) can be well fitted by a bi-exponential function. Based on the emission-energy dependence of carrier lifetimes and the amplitude ratio of the fast-decay component to the slow-decay component, the fast and slow PL decays of CdSe nanocrystals are attributed to the recombination of delocalized carriers in the core states and localized carriers in the surface states, respectively. The PL intensities of CdSe nano-tetrapods and QDs were found to be five times and an order of magnitude higher in air than in vacuum, respectively, which is explained by the passivation of surface defects by the polar gas (oxygen) absorption. The lower enhancement in PL intensities of CdSe nano-tetrapods is explained by the special morphology of the tetrapods. (orig.)

  10. Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

    Science.gov (United States)

    Colocci, M.; Bogani, F.; Carraresi, L.; Mattolini, R.; Bosacchi, A.; Franchi, S.; Frigeri, P.; Rosa-Clot, M.; Taddei, S.

    1997-06-01

    Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.

  11. Uncovering the Design Principle of Amino Acid-Derived Photoluminescent Biodots with Tailor-Made Structure-Properties and Applications for Cellular Bioimaging.

    Science.gov (United States)

    Xu, Hesheng Victor; Zheng, Xin Ting; Zhao, Yanli; Tan, Yen Nee

    2018-06-01

    Natural amino acids possess side chains with different functional groups (R groups), which make them excellent precursors for programmable synthesis of biomolecule-derived nanodots (biodots) with desired properties. Herein, we report the first systematic study to uncover the material design rules of biodot synthesis from 20 natural α-amino acids via a green hydrothermal approach. The as-synthesized amino acid biodots (AA dots) are comprehensively characterized to establish a structure-property relationship between the amino acid precursors and the corresponding photoluminescent properties of AA dots. It was found that the amino acids with reactive R groups, including amine, hydroxyl, and carboxyl functional groups form unique C-O-C/C-OH and N-H bonds in the AA dots which stabilize the surface defects, giving rise to brightly luminescent AA dots. Furthermore, the AA dots were found to be amorphous and the length of the R group was observed to affect the final morphology (e.g., disclike nanostructure, nanowire, or nanomesh) of the AA dots, which in turn influence their photoluminescent properties. It is noteworthy to highlight that the hydroxyl-containing amino acids, that is, Ser and Thr, form the brightest AA dots with a quantum yield of 30.44% and 23.07%, respectively, and possess high photostability with negligible photobleaching upon continuous UV exposure for 3 h. Intriguingly, by selective mixing of Ser or Thr with another amino acid precursor, the resulting mixed AA dots could inherit unique properties such as improved photostability and significant red shift in their emission wavelength, producing enhanced green and red fluorescent intensity. Moreover, our cellular studies demonstrate that the as-synthesized AA dots display outstanding biocompatibility and excellent intracellular uptake, which are highly desirable for imaging applications. We envision that the material design rules discovered in this study will be broadly applicable for the rational

  12. Microwave Synthesis of Nearly Monodisperse Core/Multishell Quantum Dots with Cell Imaging Applications

    Directory of Open Access Journals (Sweden)

    Xu Hengyi

    2010-01-01

    Full Text Available Abstract We report in this article the microwave synthesis of relatively monodisperse, highly crystalline CdSe quantum dots (QDs overcoated with Cd0.5Zn0.5S/ZnS multishells. The as-prepared QDs exhibited narrow photoluminescence bandwidth as the consequence of homogeneous size distribution and uniform crystallinity, which was confirmed by transmission electron microscopy. A high photoluminescence quantum yield up to 80% was measured for the core/multishell nanocrystals. Finally, the resulting CdSe/Cd0.5Zn0.5S/ZnS core/multishell QDs have been successfully applied to the labeling and imaging of breast cancer cells (SK-BR3.

  13. Air-Stable Surface-Passivated Perovskite Quantum Dots for Ultra-Robust, Single- and Two-Photon-Induced Amplified Spontaneous Emission

    KAUST Repository

    Pan, Jun; Sarmah, Smritakshi P.; Banavoth, Murali; Dursun, Ibrahim; Peng, Wei; Parida, Manas R.; Liu, Jiakai; Sinatra, Lutfan; AlYami, Noktan; Zhao, Chao; Alarousu, Erkki; Ng, Tien Khee; Ooi, Boon S.; Bakr, Osman; Mohammed, Omar F.

    2015-01-01

    We demonstrate ultra-air- and photostable CsPbBr3 quantum dots (QDs) by using an inorganic–organic hybrid ion pair as the capping ligand. This passivation approach to perovskite QDs yields high photoluminescence quantum yield with unprecedented

  14. Second-harmonic imaging of semiconductor quantum dots

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld

    2000-01-01

    Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...

  15. Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Schneider, C.; Stobbe, Søren

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  16. Polarized emission from CsPbX3 perovskite quantum dots

    Science.gov (United States)

    Wang, Dan; Wu, Dan; Dong, Di; Chen, Wei; Hao, Junjie; Qin, Jing; Xu, Bing; Wang, Kai; Sun, Xiaowei

    2016-06-01

    Compared to organic/inorganic hybrid perovskites, full inorganic perovskite quantum dots (QDs) exhibit higher stability. In this study, full inorganic CsPbX3 (X = Br, I and mixed halide systems Br/I) perovskite QDs have been synthesized and interestingly, these QDs showed highly polarized photoluminescence which is systematically studied for the first time. Furthermore, the polarization of CsPbI3 was as high as 0.36 in hexane and 0.40 as a film. The CsPbX3 perovskite QDs with high polarization properties indicate that they possess great potential for application in new generation displays with wide colour gamut and low power consumption.Compared to organic/inorganic hybrid perovskites, full inorganic perovskite quantum dots (QDs) exhibit higher stability. In this study, full inorganic CsPbX3 (X = Br, I and mixed halide systems Br/I) perovskite QDs have been synthesized and interestingly, these QDs showed highly polarized photoluminescence which is systematically studied for the first time. Furthermore, the polarization of CsPbI3 was as high as 0.36 in hexane and 0.40 as a film. The CsPbX3 perovskite QDs with high polarization properties indicate that they possess great potential for application in new generation displays with wide colour gamut and low power consumption. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01915c

  17. Spin storage in quantum dot ensembles and single quantum dots

    International Nuclear Information System (INIS)

    Heiss, Dominik

    2009-01-01

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with

  18. Spin storage in quantum dot ensembles and single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Dominik

    2009-10-15

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

  19. A job for quantum dots: use of a smartphone and 3D-printed accessory for all-in-one excitation and imaging of photoluminescence.

    Science.gov (United States)

    Petryayeva, Eleonora; Algar, W Russ

    2016-04-01

    Point-of-care (POC) diagnostic technologies are needed to improve global health and smartphones are a prospective platform for these technologies. While many fluorescence or photoluminescence-based smartphone assays have been reported in the literature, common shortcomings are the requirement of an excitation light source external to the smartphone and complicated integration of that excitation source with the smartphone. Here, we show that the photographic flash associated with the smartphone camera can be utilized to enable all-in-one excitation and imaging of photoluminescence (PL), thus eliminating the need for an excitation light source external to the smartphone. A simple and low-cost 3D-printed accessory was designed to create a dark environment and direct excitation light from the smartphone flash onto a sample. Multiple colors and compositions of semiconductor quantum dot (QD) were evaluated as photoluminescent materials for all-in-one smartphone excitation and imaging of PL, and these were compared with fluorescein and R-phycoerythrin (R-PE), which are widely utilized molecular and protein materials for fluorescence-based bioanalysis. The QDs were found to exhibit much better brightness and have the best potential for two-color detection. A model protein binding assay with a sub-microgram per milliliter detection limit and a Förster resonance energy transfer (FRET) assay for proteolytic activity were demonstrated, including imaging with serum as a sample matrix. In addition, FRET within tandem conjugates of a QD donor and fluorescent dye acceptor enabled smartphone detection of dye fluorescence that was otherwise unobservable without the QD to enhance its brightness. The ideal properties of photoluminescent materials for all-in-one smartphone excitation and imaging are discussed in the context of several different materials, where QDs appear to be the best overall material for this application.

  20. Photoluminescence spectral study of single cadmium selenide/zinc sulfide colloidal nanocrystals in poly(methyl methacrylate) and quantum dots molecules

    Science.gov (United States)

    Shen, Yaoming

    Quantum dots (QDs)and Nano-crystals (NCs) have been studies for decades. Because of the nanoscale quantum confinement, delta shape like energy density states and narrowband emitters properties, they hold great promise for numerous optoelectronics and photonics applications. They could be used for tunable lasers, white LED, Nano-OLED, non-volatile memory and solar cells. They are also the most promising candidates for the quantum computing. The benefits for NCs over QDs is that NCs can be incorporated into a variety of polymers as well as thin films of bulk semiconductors. These exceptional flexibility and structural control distinguish NCs from the more traditional QD structures fabricated using epitaxial growth techniques. In my research of work, I studied the photoluminescence (PL) and absorption character of ensemble NCs incorporated in Polymethyl methacrylate (PMMA). To understand the behavior of the NCs in PMMA, it is important to measure a singe NC to avoid the inhomogenous broading of many NCs. So I particularly studied the behavior of a single NC in PMMA matrix. A microphotoluminescence setup to optically isolate a single nanocrystal is used. Random spectral shift and blinking behavior (on and off) are found. Addition to that, two color spectral shifting, is a major phenomena found in the system. Other interesting results such as PL intensity changes (decreasing or increasing with time) and quenching effect are observed and explained too. From the correlation function, we can distinguish the phonon replicas. The energy of these phonons can be calculated very accurately from the experiment result. The Huang-Rhys factors can be estimated too. Self-assembled semiconductor quantum dots (QDs), from highly strained-layer heteroepitaxy in the Stranski-Krastanow (S-K) growth mode, have been intensively studied because of the delta-function-like density of states, which is significant for optoelectronic applications. Spontaneous formation of semiconductor quantum-dot

  1. Utilizing a CdTe quantum dots-enzyme hybrid system for the determination of both phenolic compounds and hydrogen peroxide.

    Science.gov (United States)

    Yuan, Jipei; Guo, Weiwei; Wang, Erkang

    2008-02-15

    In this paper, we attempt to construct a simple and sensitive detection method for both phenolic compounds and hydrogen peroxide, with the successful combination of the unique property of quantum dots and the specificity of enzymatic reactions. In the presence of H2O2 and horseradish peroxidase, phenolic compounds can quench quantum dots' photoluminescence efficiently, and the extent of quenching is severalfold to more than 100-fold increase. Quinone intermediates produced from the enzymatic catalyzed oxidation of phenolic compounds were believed to play the main role in the photoluminescence quenching. Using a quantum dots-enzyme system, the detection limits for phenolic compounds and hydrogen peroxide were detected to be approximately 10(-7) mol L(-1). The coupling of efficient quenching of quantum dot photoluminescence by quinone and the effective enzymatic reactions make this a simple and sensitive method for phenolic compound detection and great potential in the development of H2O2 biosensors for various analytes.

  2. Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix

    Science.gov (United States)

    Kung, Patrick; Harris, Nicholas; Shen, Gang; Wilbert, David S.; Baughman, William; Balci, Soner; Dawahre, Nabil; Butler, Lee; Rivera, Elmer; Nikles, David; Kim, Seongsin M.

    2012-01-01

    Quantum dot (QD) functionalized nanowire arrays are attractive structures for low cost high efficiency solar cells. QDs have the potential for higher quantum efficiency, increased stability and lifetime compared to traditional dyes, as well as the potential for multiple electron generation per photon. Nanowire array scaffolds constitute efficient, low resistance electron transport pathways which minimize the hopping mechanism in the charge transport process of quantum dot solar cells. However, the use of liquid electrolytes as a hole transport medium within such scaffold device structures have led to significant degradation of the QDs. In this work, we first present the synthesis uniform single crystalline ZnO nanowire arrays and their functionalization with InP/ZnS core-shell quantum dots. The structures are characterized using electron microscopy, optical absorption, photoluminescence and Raman spectroscopy. Complementing photoluminescence, transmission electron microanalysis is used to reveal the successful QD attachment process and the atomistic interface between the ZnO and the QD. Energy dispersive spectroscopy reveals the co-localized presence of indium, phosphorus, and sulphur, suggestive of the core-shell nature of the QDs. The functionalized nanowire arrays are subsequently embedded in a poly-3(hexylthiophene) hole transport matrix with a high degree of polymer infiltration to complete the device structure prior to measurement.

  3. Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

    International Nuclear Information System (INIS)

    Ha, Neul; Kuroda, Takashi; Liu, Xiangming; Mano, Takaaki; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki; Castellano, Andrea; Sanguinetti, Stefano

    2014-01-01

    We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C 3v symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks

  4. Synthesis and Characterization of Mercaptoacetic Acid Capped Cadmium Sulphide Quantum Dots.

    Science.gov (United States)

    Wageh, S; Maize, Mai; Donia, A M; Al-Ghamdi, Ahmed A; Umar, Ahmad

    2015-12-01

    This paper reports the facile synthesis and detailed characterization of mercaptoacetic acid capped cadmium sulphide (CdS) quantum dots using various cadmium precursors. The mercaptoacetic acid capped CdS quantum dots were prepared by facile and simple wet chemical method and characterized by several techniques such as energy dispersive spectroscopy (EDS), X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, UV-vis. spectroscopy, photoluminescence spectroscopy, high-resolution transmission microscopy (HRTEM) and thremogravimetric analysis. The EDS studies revealed that the prepared quantum dots possess higher atomic percentage of sulfur compared to cadmium due to the coordination of thiolate to the quantum dots surfaces. The X-ray and absorption analyses exhibited that the size of quantum dots prepared by cadmium acetate is larger than the quantum dots prepared by cadmium chloride and cadmium nitrate. The increase in size can be attributed to the low stability constant of cadmium acetate in comparison with cadmium chloride and cadmium nitrate. The FTIR and thermogravimetric analysis showed that the nature of capping molecule on the surface of quantum dots are different depending on the cadmium precursors which affect the emission from CdS quantum dots. Photoemission spectroscopy revealed that the emission of quantum dots prepared by cadmium acetate has high intensity band edge emission along with low intensity trapping state emission. However the CdS quantum dots prepared by cadmium chloride and cadmium nitrate produced only trapping state emissions.

  5. GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

    NARCIS (Netherlands)

    Ulloa Herrero, J.M.; Gargallo-Caballero, R.; Bozkurt, M.; Moral, del M.; Guzman, A.; Koenraad, P.M.; Hierro, A.

    2010-01-01

    The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum dots (QDs) are shown to be strongly correlated with structural changes. The observed redshift of the photoluminescence emission is shown to follow two different regimes. In the first regime, with Sb concentrations up

  6. Theory of Spin States of Quantum Dot Molecules

    Science.gov (United States)

    Ponomarev, I. V.; Reinecke, T. L.; Scheibner, M.; Stinaff, E. A.; Bracker, A. S.; Doty, M. F.; Gammon, D.; Korenev, V. L.

    2007-04-01

    The photoluminescence spectrum of an asymmetric pair of coupled InAs quantum dots in an applied electric field shows a rich pattern of level anticrossings, crossings and fine structure that can be understood as a superposition of charge and spin configurations. We present a theoretical model that provides a description of the energy positions and intensities of the optical transitions in exciton, biexciton and charged exciton states of coupled quantum dots molecules.

  7. Polarization spectroscopy of positive and negative trions in an InAs quantum dot

    Science.gov (United States)

    Ware, Morgan E.; Bracker, Allan S.; Stinaff, Eric; Gammon, Daniel; Gershoni, David; Korenev, Vladimir L.

    2005-02-01

    Using polarization-sensitive photoluminescence and photoluminescence excitation spectroscopy, we study single InAs/GaAs self-assembled quantum dots. The dots were embedded in an n-type, Schottky diode structure allowing for control of the charge state. We present here the exciton, singly charged exciton (positive and negative trions), and the twice negatively charged exciton. For non-resonant excitation below the wetting layer, we observed a large degree of polarization memory from the radiative recombination of both the positive and negative trions. In excitation spectra, through the p-shell, we have found several sharp resonances in the emission from the s-shell recombination of the dot in all charged states. Some of these excitation resonances exhibit strong coulomb shifts upon addition of charges into the quantum dot. One particular resonance of the negatively charged trion was found to exhibit a fine structure doublet under circular polarization. This observation is explained in terms of resonant absorption into the triplet states of the negative trion.

  8. Quantum Dots and Their Multimodal Applications: A Review

    Directory of Open Access Journals (Sweden)

    Paul H. Holloway

    2010-03-01

    Full Text Available Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence or electric field (electroluminescence. In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

  9. Ligand-assisted fabrication, structure, and luminescence properties of Fe:ZnSe quantum dots

    International Nuclear Information System (INIS)

    Xie, Ruishi; Zhang, Xingquan; Liu, Haifeng

    2014-01-01

    Highlights: • A green route is developed for synthesis of water-soluble and fluorescent Fe:ZnSe quantum dots. • Tunable luminescence intensity can be realized with different ligand-to-Zn molar ratios. • The obtained quantum dots are in the so-called “quantum confinement regime”. -- Abstract: Here, we report a synthetic route for highly emissive Fe:ZnSe quantum dots in aqueous media using the mercaptoacetic acid ligand as stabilizing agent. The structural, morphological, componential, and optical properties of the resulting quantum dots were explored by the X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence and UV–visible absorption spectroscopies. The average crystallite size was calculated to be about ca., 4.0 nm using the Scherrer equation, which correlates well with the value obtained from the transmission electron microscopy analysis. The obtained water-soluble Fe:ZnSe quantum dots in the so-called “quantum confinement regime” are spherical shaped, possess the cubic sphalerite crystal structure, and exhibit tunable luminescence properties. The presence of mercaptoacetic acid on the surface of Fe:ZnSe quantum dots was confirmed by the Fourier transform infrared spectroscopy measurements. As the ligand/Zn molar ratio increases from 1.3 to 2.8, there is little shift in the absorption peak of the Fe:ZnSe sample, indicating that the particle size of the obtained quantum dots is not changed during the synthetic process. The photoluminescence quantum yield of the as-prepared water-soluble Fe:ZnSe quantum dots can be up to 39%. The molar ratio of ligand-to-Zn plays a crucial role in determining the final luminescence properties of the resulting quantum dots, and the maximum PL intensity appears as the ligand-to-Zn molar ratio is 2.2. In addition, the underlying mechanism for

  10. Ligand-assisted fabrication, structure, and luminescence properties of Fe:ZnSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Ruishi, E-mail: rxie@foxmail.com; Zhang, Xingquan; Liu, Haifeng

    2014-03-15

    Highlights: • A green route is developed for synthesis of water-soluble and fluorescent Fe:ZnSe quantum dots. • Tunable luminescence intensity can be realized with different ligand-to-Zn molar ratios. • The obtained quantum dots are in the so-called “quantum confinement regime”. -- Abstract: Here, we report a synthetic route for highly emissive Fe:ZnSe quantum dots in aqueous media using the mercaptoacetic acid ligand as stabilizing agent. The structural, morphological, componential, and optical properties of the resulting quantum dots were explored by the X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence and UV–visible absorption spectroscopies. The average crystallite size was calculated to be about ca., 4.0 nm using the Scherrer equation, which correlates well with the value obtained from the transmission electron microscopy analysis. The obtained water-soluble Fe:ZnSe quantum dots in the so-called “quantum confinement regime” are spherical shaped, possess the cubic sphalerite crystal structure, and exhibit tunable luminescence properties. The presence of mercaptoacetic acid on the surface of Fe:ZnSe quantum dots was confirmed by the Fourier transform infrared spectroscopy measurements. As the ligand/Zn molar ratio increases from 1.3 to 2.8, there is little shift in the absorption peak of the Fe:ZnSe sample, indicating that the particle size of the obtained quantum dots is not changed during the synthetic process. The photoluminescence quantum yield of the as-prepared water-soluble Fe:ZnSe quantum dots can be up to 39%. The molar ratio of ligand-to-Zn plays a crucial role in determining the final luminescence properties of the resulting quantum dots, and the maximum PL intensity appears as the ligand-to-Zn molar ratio is 2.2. In addition, the underlying mechanism for

  11. Colloidal quantum dot photovoltaics: The effect of polydispersity

    KAUST Repository

    Zhitomirsky, David; Kramer, Illan J.; Labelle, André J.; Fischer, Armin H.; Debnath, Ratan K.; Pan, Jun; Bakr, Osman; Sargent, E. H.

    2012-01-01

    , the dependence of both open-circuit voltage and photoluminescence behavior on the density of small-bandgap (large-diameter) quantum dot inclusions. The model requires inclusion of trap states to explain the experimental data quantitatively. We then explore using

  12. Temporal evolution of multi-carrier complexes in single GaN/AlGaN quantum dots

    International Nuclear Information System (INIS)

    Surowiecka, K.; Wysmolek, A.; Stepniewski, R.; Bozek, R.; Pakula, K.; Baranowski, J.M.

    2005-01-01

    Micro photoluminescence of low-density GaN/Al x Ga 1-x N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the micro photoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify objects, which are affected by photo-induced electric field fluctuations. Relations between emission lines participating in the spectrum are discussed. (author)

  13. UV and air stability of high-efficiency photoluminescent silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jihua, E-mail: yangj@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liptak, Richard [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Ave, Terre Haute, IN 47803 (United States); Rowe, David; Wu, Jeslin [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Casey, James; Witker, David [Dow Corning Corporation, 2200 W. Salzburg Road, Midland, MI 48686 (United States); Campbell, Stephen A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Kortshagen, Uwe, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States)

    2014-12-30

    The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

  14. Soy flour-derived carbon dots: facile preparation, fluorescence enhancement, and sensitive Fe{sup 3+} detection

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Liyang; Xu, Qian [China University of Petroleum, State Key Laboratory of Heavy Oil Processing (China); Zheng, Xing [Bei Jing Sinen En-Tech Co., Ltd (China); Zhang, Weina; Zheng, Jingtang, E-mail: jtzheng03@163.com; Wu, Mingbo, E-mail: wumb@upc.edu.cn; Wu, Wenting, E-mail: wuwt@upc.edu.cn [China University of Petroleum, State Key Laboratory of Heavy Oil Processing (China)

    2016-08-15

    Soy flour-derived carbon quantum dots (C-dots) were successfully synthesized via a facile one-step hydrothermal approach. The as-prepared C-dots exhibit an average diameter of 2.5 nm and the crystalline lattices are consistent with graphitic carbons. Meanwhile, they show strong photoluminescence (quantum yield is 7.85 %), good water solubility, and high photostability. Importantly, structural defects of the C-dots were designed to obtain controllable fluorescence, which was achieved by changing the contents of N defects and O defects of C-dots. Our results indicate that N defects can more effectively enhance the fluorescence emission than O defects. As the preparation temperature increases, the N defects are fine-tuned by substituting for partial O defects, reducing nonradiative recombination and enhancing fluorescence intensity, which is further confirmed by surface passivation. Due to its fine photostability, high sensitivity, and good selectivity for Fe{sup 3+}, the as-prepared C-dots were used as fluorescence probes for detection of ferric ion. The detection limitation comes to 0.021 µM.

  15. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  16. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    International Nuclear Information System (INIS)

    Shimomura, K.; Kamiya, I.

    2015-01-01

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers

  17. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    Energy Technology Data Exchange (ETDEWEB)

    Shimomura, K., E-mail: sd12502@toyota-ti.ac.jp; Kamiya, I., E-mail: kamiya@toyota-ti.ac.jp [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

    2015-02-23

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers.

  18. Electrochemical tuning of optical properties of graphitic quantum dots

    International Nuclear Information System (INIS)

    Ge, Juan; Li, Yan; Zhang, Bo-Ping; Ma, Ning; Wang, Jun; Pu, Chang; Xiang, Ying-Chang

    2015-01-01

    Graphitic quantum dots (GQDs), as a new class of quantum dots, possess unique properties. Among the various reported approaches for their fabrication, electrochemical method possesses numerous advantages compared with others. In particular, the formation process of the GQDs could be precisely controlled by this method through adjusting the electrochemical parameters and environment. In this study, GQDs with multi-color fluorescence (FL) were obtained by this method through tuning only the applied potential window of cycling voltammetry. The luminescence mechanism of those GQDs was discussed and explained by the ultraviolet (UV)–visible, photoluminescence (PL), and photoluminescence excitation (PLE) spectra. The influence of the applied potential window on the PL properties of GQDs and the relationship between the degree of surface oxidation and PL properties were also investigated. - Highlights: • We produced the graphite quantum dots (GQDs) by an electrochemical method. • We changed the applied potentials of cycling voltammetry (CV). • Varying of applied potentials changed surface oxygen-containing groups of GQDs. • Higher surface oxidation degree resulted in the red-shift of PL spectra

  19. The mechanism of the photoluminescence changes in bio-conjugated CdSe/ZnS quantum dots

    Science.gov (United States)

    Borkovska, L.; Korsunska, N.; Stara, T.; Kolomys, O.; Strelchuk, V.; Rachkov, O.; Kryshtab, T.

    2013-09-01

    The change of the photoluminescence (PL) and optical characteristics in non-conjugated and conjugated with S6K2 antibody CdSe/ZnS core/shell quantum dots (QDs) during storage in air has been studied by the conventional PL, micro-PL and micro-Raman techniques. The QDs dried on a crystalline Si substrate were kept in the darkness and under illumination. In the PL spectra, the storage resulted in a blue shift of PL peak position, in the increasing of the full width at a half maximum (FWHM) of the PL band and in the decreasing of the PL intensity. In the Raman spectra, the shift of the CdSe LO peak position to the low frequency region and the increasing of its FWHM were observed. The transformations in the PL and optical characteristics correlate with each other and are found to be the largest in bio-conjugated QDs stored under illumination. The increase of the light intensity accelerated the changes occurred during storage. An oxidation of the QD core, which decreases the QD size, is supposed to be responsible for observed transformations. The bio-conjugation is assumed to promote QD oxidation that results in different PL peak position in stored non-conjugated and bio-conjugated QDs. The mechanism of the effect is discussed.

  20. Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin

    Science.gov (United States)

    2011-01-01

    Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633

  1. Green biosynthesis of biocompatible CdSe quantum dots in living Escherichia coli cells

    International Nuclear Information System (INIS)

    Yan, Zhengyu; Qian, Jing; Su, Yilong; Ai, Xiaoxia; Wu, Shengmei; Gu, Yueqing

    2014-01-01

    A green and efficient biosynthesis method to prepare fluorescence-tunable biocompatible cadmium selenide quantum dots using Escherichia coli cells as biological matrix was proposed. Decisive factors in biosynthesis of cadmium selenide quantum dots in a designed route in Escherichia coli cells were elaborately investigated, including the influence of the biological matrix growth stage, the working concentration of inorganic reactants, and the co-incubation duration of inorganic metals to biomatrix. Ultraviolet-visible, photoluminescence, and inverted fluorescence microscope analysis confirmed the unique optical properties of the biosynthesized cadmium selenide quantum dots. The size distribution of the nanocrystals extracted from cells and the location of nanocrystals foci in vivo were also detected seriously by transmission electron microscopy. A surface protein capping layer outside the nanocrystals was confirmed by Fourier transform infrared spectroscopy measurements, which were supposed to contribute to reducing cytotoxicity and maintain a high viability of cells when incubating with quantum dots at concentrations as high as 2 μM. Cell morphology observation indicated an effective labeling of living cells by the biosynthesized quantum dots after a 48 h co-incubation. The present work demonstrated an economical and environmentally friendly approach to fabricating highly fluorescent quantum dots which were expected to be an excellent fluorescent dye for broad bio-imaging and labeling. (papers)

  2. Polyaniline/carbon nanotube/CdS quantum dot composites with enhanced optical and electrical properties

    Science.gov (United States)

    Goswami, Mrinmoy; Ghosh, Ranajit; Maruyama, Takahiro; Meikap, Ajit Kumar

    2016-02-01

    A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been developed via in-situ polymerization of aniline monomer in the presence of dispersed CdS quantum dots (size: 2.7-4.8 nm) and multi-walled carbon nanotubes (CNT), which exhibits enhanced optical and electrical properties. The existences of 1st order, 2nd order, and 3rd order longitudinal optical phonon modes, strongly indicate the high quality of synthesized CdS quantum dots. The occurrence of red shift of free exciton energy in photoluminescence is due to size dependent quantum confinement effect of CdS. The conductivity of the composites (for example PANI/CNT/CdS (2 wt.% CdS)) is increased by about 7 of magnitude compared to that of pure PANI indicating a charge transfer between CNT and polymer via CdS quantum dots. This advanced material has a great potential for high-performance of electro-optical applications.

  3. Highly luminescent S,N co-doped carbon quantum dots-sensitized chemiluminescence on luminol-H2 O2 system for the determination of ranitidine.

    Science.gov (United States)

    Chen, Jianqiu; Shu, Juan; Chen, Jiao; Cao, Zhiran; Xiao, An; Yan, Zhengyu

    2017-05-01

    S,N co-doped carbon quantum dots (N,S-CQDs) with super high quantum yield (79%) were prepared by the hydrothermal method and characterized by transmission electron microscopy, photoluminescence, UV-Vis spectroscopy and Fourier transformed infrared spectroscopy. N,S-CQDs can enhance the chemiluminescence intensity of a luminol-H 2 O 2 system. The possible mechanism of the luminol-H 2 O 2 -(N,S-CQDs) was illustrated by using chemiluminescence, photoluminescence and ultraviolet analysis. Ranitidine can quench the chemiluminescence intensity of a luminol-H 2 O 2 -N,S-CQDs system. So, a novel flow-injection chemiluminescence method was designed to determine ranitidine within a linear range of 0.5-50 μg ml -1 and a detection limit of 0.12 μg ml -1 . The method shows promising application prospects. Copyright © 2016 John Wiley & Sons, Ltd.

  4. Photoluminescence of double core/shell infrared (CdSeTe)/ZnS quantum dots conjugated to Pseudo rabies virus antibodies

    Science.gov (United States)

    Torchynska, T. V.; Casas Espinola, J. L.; Jaramillo Gómez, J. A.; Douda, J.; Gazarian, K.

    2013-06-01

    Double core CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) have been studied by photoluminescence (PL) and Raman scattering methods in the non-conjugated state and after the conjugation to the Pseudo rabies virus (PRV) antibodies. The transformation of PL spectra, stimulated by the electric charge of antibodies, has been detected for the bioconjugated QDs. Raman scattering spectra are investigated with the aim to reveal the CdSeTe core compositions. The double core QD energy diagrams were designed that help to analyze the PL spectra and their transformation at the bioconjugation. It is revealed that the interface in double core QDs has the type II quantum well character that permits to explain the near IR optical transition (1.60 eV) in the double core QDs. It is shown that the essential transformation of PL spectra is useful for the study of QD bioconjugation with specific antibodies and can be a powerful technique in early medical diagnostics.

  5. Four-wave mixing in InAlGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Birkedal, Dan; Hvam, Jørn Märcher

    2001-01-01

    broadening strongly reduce the interaction with the electromagnetic field. Until now, four-wave mixing (FWM) in III-V quantum dots has only been reported in optical amplifiers at room temperature, where the interaction length is increased by waveguiding in the quantum dot plane. We have carried out...... degenerate FWM experiments in a slab geometry on a sample containing 10 layers of MBE-grown In0.5Al0.04Ga0.46As quantum dots (QDs) with 50-nm Al0.08Ga0.92As barriers. Ground state photoluminescence emission was measured....

  6. Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors.

    Science.gov (United States)

    Cho, Kyung-Sang; Heo, Keun; Baik, Chan-Wook; Choi, Jun Young; Jeong, Heejeong; Hwang, Sungwoo; Lee, Sang Yeol

    2017-10-10

    We report color-selective photodetection from intermediate, monolayered, quantum dots buried in between amorphous-oxide semiconductors. The proposed active channel in phototransistors is a hybrid configuration of oxide-quantum dot-oxide layers, where the gate-tunable electrical property of silicon-doped, indium-zinc-oxide layers is incorporated with the color-selective properties of quantum dots. A remarkably high detectivity (8.1 × 10 13 Jones) is obtained, along with three major findings: fast charge separation in monolayered quantum dots; efficient charge transport through high-mobility oxide layers (20 cm 2  V -1  s -1 ); and gate-tunable drain-current modulation. Particularly, the fast charge separation rate of 3.3 ns -1 measured with time-resolved photoluminescence is attributed to the intermediate quantum dots buried in oxide layers. These results facilitate the realization of efficient color-selective detection exhibiting a photoconductive gain of 10 7 , obtained using a room-temperature deposition of oxide layers and a solution process of quantum dots. This work offers promising opportunities in emerging applications for color detection with sensitivity, transparency, and flexibility.The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors and demonstrate color-detecting logic gates.

  7. Optical pumping and negative luminescence polarization in charged GaAs quantum dots

    Science.gov (United States)

    Shabaev, Andrew; Stinaff, Eric A.; Bracker, Allan S.; Gammon, Daniel; Efros, Alexander L.; Korenev, Vladimir L.; Merkulov, Igor

    2009-01-01

    Optical pumping of electron spins and negative photoluminescence polarization are observed when interface quantum dots in a GaAs quantum well are excited nonresonantly by circularly polarized light. Both observations can be explained by the formation of long-lived dark excitons through hole spin relaxation in the GaAs quantum well prior to exciton capture. In this model, optical pumping of resident electron spins is caused by capture of dark excitons and recombination in charged quantum dots. Negative polarization results from accumulation of dark excitons in the quantum well and is enhanced by optical pumping. The dark exciton model describes the experimental results very well, including intensity and bias dependence of the photoluminescence polarization and the Hanle effect.

  8. One pot synthesis of highly luminescent polyethylene glycol anchored carbon dots functionalized with a nuclear localization signal peptide for cell nucleus imaging.

    Science.gov (United States)

    Yang, Lei; Jiang, Weihua; Qiu, Lipeng; Jiang, Xuewei; Zuo, Daiying; Wang, Dongkai; Yang, Li

    2015-04-14

    Strong blue fluorescent polyethylene glycol (PEG) anchored carbon nitride dots (CDs@PEG) with a high quantum yield (QY) of 75.8% have been synthesized by a one step hydrothermal treatment. CDs with a diameter of ca. 6 nm are well dispersed in water and present a graphite-like structure. Photoluminescence (PL) studies reveal that CDs display excitation-dependent behavior and are stable under various test conditions. Based on the as-prepared CDs, we designed novel cell nucleus targeting imaging carbon dots functionalized with a nuclear localization signal (NLS) peptide. The favourable biocompatibilities of CDs and NLS modified CDs (NLS-CDs) are confirmed by in vitro cytotoxicity assays. Importantly, intracellular localization experiments in MCF7 and A549 cells demonstrate that NLS-CDs could be internalized in the nucleus and show blue light, which indicates that CDs may serve as cell nucleus imaging probes.

  9. Aqueous synthesis of high bright Ag{sub 2}Se−ZnSe quantum dots with tunable near-infrared emission

    Energy Technology Data Exchange (ETDEWEB)

    Che, Dongchen; Ding, Di [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Wang, Hongzhi, E-mail: wanghz@dhu.edu.cn [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Zhang, Qinghong [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Li, Yaogang, E-mail: yaogang_li@dhu.edu.cn [Engineering Research Center of Advanced Glass Manufacturing Technology, Ministry of Education, Donghua University, Shanghai 201602 (China)

    2016-09-05

    Efficient aqueous synthetic methods for near-infrared quantum dots as bioimaging agents are urgently required. In this work, a simple and fast synthesis of highly luminescent, near-infrared Ag{sub 2}Se quantum dots (QDs) in aqueous media is reported. The method avoids high temperature, pressure and organic solvents to directly generate water-dispersible Ag{sub 2}Se QDs. The photoluminescence emission of Ag{sub 2}Se QDs ranges from 835 to 940 nm by different Ag:Se molar ratio. Using the ZnSe as a shell, the quantum yield reaches up to 42%. The Ag{sub 2}Se−ZnSe QDs with high quantum yield, near-infrared and low cytotoxic could be used as good cell labels, showing great potential applications in bio-imaging. - Highlights: • Ag{sub 2}Se−ZnSe nanocrystals are prepared directly in aqueous media at low temperature. • Ag{sub 2}Se−ZnSe nanocrystals show excellent water solubility and colloidal stability. • Ag{sub 2}Se nanocrystals exhibit tunable near-infrared emission with ultrasmall size. • Ag{sub 2}Se−ZnSe nanocrystals show high quantum yield with low cytotoxicity. • Ag{sub 2}Se−ZnSe nanocrystals are stable over a month at room temperature in the air.

  10. Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Gauthier, J.-P.; Almosni, S.; Léger, Y.; Perrin, M.; Even, J.; Cornet, C., E-mail: charles.cornet@insa-rennes.fr; Durand, O. [UMR FOTON, CNRS, INSA-Rennes, F-35708 Rennes (France); Robert, C. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Balocchi, A.; Carrère, H.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, F-31077 Toulouse (France)

    2014-12-15

    We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.

  11. Proposed Quenching of Phonon-Induced Processes in Photoexcited Quantum Dots due to Electron-Hole Asymmetries

    DEFF Research Database (Denmark)

    Nysteen, Anders; Nielsen, Per Kær; Mørk, Jesper

    2013-01-01

    by photoluminescence excitation spectroscopy of a single quantum dot. We also investigate the implications for cavity QED, i.e., a coupled quantum dot-cavity system, and demonstrate that the phonon scattering may be strongly quenched. The quenching is explained by a balancing between the deformation potential...

  12. Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

    Directory of Open Access Journals (Sweden)

    Heyn Ch

    2009-01-01

    Full Text Available Abstract Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.

  13. Investigation of self-organized quantum dots in InGaN alloys for photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Jinshe; Wang, Mingyue [Chongqing Normal Univ. (China). Dept. of Physics

    2008-07-01

    The self-organized quantum dots in InGaN alloys grown by metal organic chemical vapor deposition for photovoltaic devices were investigated using photoluminescence spectra, x-ray diffraction and atomic force microscopy measurements. The AFM view of the alloy shows the island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. By analysis of the PL, it has been found that the narrow 493nm emission peak with 490nm and 487nm shoulder peaks was originated from InGaN self-organized quantum dots, which provide a candidate for realizing high efficiencies photovoltaic devices. (orig.)

  14. Integrated smartphone imaging of quantum dot photoluminescence and Förster resonance energy transfer

    Science.gov (United States)

    Petryayeva, Eleonora; Algar, W. Russ

    2015-06-01

    Smartphones and other mobile devices are emerging as promising analytical platforms for point-of-care diagnostics, particularly when combined with nanotechnology. For example, we have shown that the optical properties of semiconductor quantum dots (QDs) are well suited to photoluminescence (PL) detection with a smartphone camera. However, this previous work has utilized an external excitation source for interrogation of QD PL. In this proceeding, we demonstrate that the white-light LED photographic flashes built into smartphones can be optically filtered to yield blue light suitable for excitation of QD PL. Measurements were made by recording video with filtered flash illumination and averaging the frames of the video to obtain images with good signal-to-background ratios. These images permitted detection of green-emitting and red-emitting QDs at levels comparable to those possible with excitation using an external long-wave UV lamp. The optical properties of QDs proved to be uniquely suited to smartphone PL imaging, exhibiting emission that was 1-2 orders magnitude brighter than that of common fluorescent dyes under the same conditions. Excitation with the smartphone flash was also suitable for imaging of FRET between green-emitting QD donors and Alexa Fluor 555 (A555) fluorescent dye acceptors. No significant difference in FRET imaging capability was observed between excitation with the smartphone flash and a long-wave UV lamp. Although the smartphone flash did have some disadvantages compared to an external UV lamp, these disadvantages are potentially offset by the benefit of having excitation and detection integrated into the smartphone.

  15. High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging.

    Science.gov (United States)

    Peng, Mingzeng; Li, Zhou; Liu, Caihong; Zheng, Qiang; Shi, Xieqing; Song, Ming; Zhang, Yang; Du, Shiyu; Zhai, Junyi; Wang, Zhong Lin

    2015-03-24

    A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.

  16. Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

    Science.gov (United States)

    Jeannin, Mathieu; Cremel, Thibault; Häyrynen, Teppo; Gregersen, Niels; Bellet-Amalric, Edith; Nogues, Gilles; Kheng, Kuntheak

    2017-11-01

    Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach to fabricate a photonic fiberlike structure around such nanowire quantum dots by depositing an oxide shell using atomic-layer deposition. Simulations suggest that the intensity collected in our NA =0.6 microscope objective can be increased by a factor 7 with respect to the bare nanowire case. Combining microphotoluminescence, decay time measurements, and numerical simulations, we obtain a fourfold increase in the collected photoluminescence from the quantum dot. We show that this improvement is due to an increase of the quantum-dot emission rate and a redirection of the emitted light. Our ex situ fabrication technique allows a precise and reproducible fabrication on a large scale. Its improved extraction efficiency is compared to state-of-the-art top-down devices.

  17. Cultivating Fluorescent Flowers with Highly Luminescent Carbon Dots Fabricated by a Double Passivation Method.

    Science.gov (United States)

    Han, Shuai; Chang, Tao; Zhao, Haiping; Du, Huanhuan; Liu, Shan; Wu, Baoshuang; Qin, Shenjun

    2017-07-07

    In this work, we present the fabrication of highly luminescent carbon dots (CDs) by a double passivation method with the assistance of Ca(OH)₂. In the reaction process, Ca 2+ protects the active functional groups from overconsumption during dehydration and carbonization, and the electron-withdrawing groups on the CD surface are converted to electron-donating groups by the hydroxyl ions. As a result, the fluorescence quantum yield of the CDs was found to increase with increasing Ca(OH)₂ content in the reaction process. A blue-shift optical spectrum of the CDs was also found with increasing Ca(OH)₂ content, which could be attributed to the increasing of the energy gaps for the CDs. The highly photoluminescent CDs obtained (quantum yield: 86%) were used to cultivate fluorescent carnations by a water culture method, while the results of fluorescence microscopy analysis indicated that the CDs had entered the plant tissue structure.

  18. Extracellular biosynthesis of CdTe quantum dots by the fungus Fusarium oxysporum and their anti-bacterial activity

    Science.gov (United States)

    Syed, Asad; Ahmad, Absar

    2013-04-01

    The growing demand for semiconductor [quantum dots (Q-dots)] nanoparticles has fuelled significant research in developing strategies for their synthesis and characterization. They are extensively investigated by the chemical route; on the other hand, use of microbial sources for biosynthesis witnessed the highly stable, water dispersible nanoparticles formation. Here we report, for the first time, an efficient fungal-mediated synthesis of highly fluorescent CdTe quantum dots at ambient conditions by the fungus Fusarium oxysporum when reacted with a mixture of CdCl2 and TeCl4. Characterization of these biosynthesized nanoparticles was carried out by different techniques such as Ultraviolet-visible (UV-Vis) spectroscopy, Photoluminescence (PL), X-ray Diffraction (XRD), X-ray Photoelectron spectroscopy (XPS), Transmission Electron Microscopy (TEM) and Fourier Transformed Infrared Spectroscopy (FTIR) analysis. CdTe nanoparticles shows antibacterial activity against Gram positive and Gram negative bacteria. The fungal based fabrication provides an economical, green chemistry approach for production of highly fluorescent CdTe quantum dots.

  19. Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

    International Nuclear Information System (INIS)

    Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

    2003-01-01

    The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

  20. Transformation of photoluminescence spectra at the bioconjugation of core-shell CdSe/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Macotela, L.G.V.; Douda, J. [UPIITA - Instituto Politecnico Nacional, Mexico (Mexico); Torchynska, T.V. [ESFM- Instituto Politecnico Nacional, Mexico (Mexico); Sierra, R.P. [CINVESTAV del IPN, Mexico (Mexico); Shcherbyna, L. [V. Lashkarev Institute of Semiconductor Physics at NASU, Kiev (Ukraine)

    2010-04-15

    The photoluminescence (PL) of nonconjugated and bioconjugated core-shell CdSe/ZnS quantum dots (QDs) has been discussed in this paper. Commercial CdSe/ZnS QDs with the size of 3.6-4.0 nm covered by polymer with emission at 560-565 nm (2.19-2.22 eV) have been used. The QD bioconjugation is performed with the mouse anti PSA (Prostate-Specific Antigen) antibody (mab). PL spectra of nonconjugated QDs are characterized by a superposition of PL bands related to exciton emission in the CdSe core (2.19-2.22 eV) and to hot electron-hole emission via surface states (2.37, 2.73 and 3.06 eV) at the CdSe/ZnS or ZnS/polymer interfaces. The PL spectrum of bioconjugated QDs has changed dramatically, with essential decreasing of the hot electron-hole recombination flow via interface states. This effect is explained on the base of re-charging of QD interface states at the bioconjugation. It is shown that the CdSe/ZnS QDs with interface states are very promising for the study of bioconjugation effects to antibodies (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Engineering iodine-doped carbon dots as dual-modal probes for fluorescence and X-ray CT imaging.

    Science.gov (United States)

    Zhang, Miaomiao; Ju, Huixiang; Zhang, Li; Sun, Mingzhong; Zhou, Zhongwei; Dai, Zhenyu; Zhang, Lirong; Gong, Aihua; Wu, Chaoyao; Du, Fengyi

    2015-01-01

    X-ray computed tomography (CT) is the most commonly used imaging technique for noninvasive diagnosis of disease. In order to improve tissue specificity and prevent adverse effects, we report the design and synthesis of iodine-doped carbon dots (I-doped CDs) as efficient CT contrast agents and fluorescence probe by a facile bottom-up hydrothermal carbonization process. The as-prepared I-doped CDs are monodispersed spherical nanoparticles (a diameter of ~2.7 nm) with favorable dispersibility and colloidal stability in water. The aqueous solution of I-doped CDs showed wavelength-dependent excitation and stable photoluminescence similar to traditional carbon quantum dots. Importantly, I-doped CDs displayed superior X-ray attenuation properties in vitro and excellent biocompatibility. After intravenous injection, I-doped CDs were distributed throughout the body and excreted by renal clearance. These findings validated that I-doped CDs with high X-ray attenuation potency and favorable photoluminescence show great promise for biomedical research and disease diagnosis.

  2. Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires

    International Nuclear Information System (INIS)

    Ruiz-Castillo, M.; Segura, A.; Sans, J.A.; Martinez-Pastor, J.; Fuster, D.; Gonzalez, Y.; Gonzalez, L.

    2007-01-01

    This paper investigates the electronic structure of self-assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de-convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock-salt phase (7 GPa). (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Ligand removal and photo-activation of CsPbBr3 quantum dots for enhanced optoelectronic devices.

    Science.gov (United States)

    Moyen, Eric; Kanwat, Anil; Cho, Sinyoung; Jun, Haeyeon; Aad, Roy; Jang, Jin

    2018-05-10

    Perovskite quantum dots have recently emerged as a promising light source for optoelectronic applications. However, integrating them into devices while preserving their outstanding optical properties remains challenging. Due to their ionic nature, perovskite quantum dots are extremely sensitive and degrade on applying the simplest processes. To maintain their colloidal stability, they are surrounded by organic ligands; these prevent efficient charge carrier injection in devices and have to be removed. Here we report on a simple method, where a moderate thermal process followed by exposure to UV in air can efficiently remove ligands and increase the photo-luminescence of the room temperature synthesized perovskite quantum dot thin films. Annealing is accompanied by a red shift of the emission wavelength, usually attributed to the coalescence and irreversible degradation of the quantum dots. We show that it is actually related to the relaxation of the quantum dots upon the ligand removal, without the creation of non-radiative recombining defects. The quantum dot surface, as devoid of ligands, is subsequently photo-oxidized and smoothened upon exposure to UV in air, which drastically enhances their photo-luminescence. This adequate combination of treatments improves by more than an order of magnitude the performances of perovskite quantum dot light emitting diodes.

  4. The influence of bio-conjugation on photoluminescence of CdSe/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, Tetyana V. [ESFM Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional, México, D.F. 07738 (Mexico); Vorobiev, Yuri V. [Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV) Querétaro, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, 76230 Querétaro (Mexico); Makhniy, Victor P. [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi (Ukraine); Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico)

    2014-11-15

    We report a considerable blue shift in the luminescence spectra of CdSe/ZnS quantum dots conjugated to anti-interleukin-10 antibodies. This phenomenon can be explained theoretically by accounting for bio-conjugation as a process causing electrostatic interaction between a quantum dot and an antibody, which reduces effective volume of the dot core. To solve the Schrödinger equation for an exciton confined in the quantum dot, we use mirror boundary conditions that were successfully tested for different geometries of quantum wells.

  5. Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

    International Nuclear Information System (INIS)

    Taboada, A. G.; Alonso-Alvarez, D.; Alen, B.; Rivera, A.; Ripalda, J. M.; Llorens, J. M.; Martin-Sanchez, J.; Gonzalez, Y.; Sanchez, A. M.; Beltran, A. M.; Molina, S. I.; Bozkurt, M.; Ulloa, J. M.; Koenraad, P. M.; Garcia, J. M.

    2010-01-01

    We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

  6. Luminescent passive-oxidized silicon quantum dots as biological staining labels and their cytotoxicity effects at high concentration

    International Nuclear Information System (INIS)

    Fujioka, Kouki; Manabe, Noriyoshi; Hanada, Sanshiro; Hoshino, Akiyoshi; Yamamoto, Kenji; Hiruoka, Masaki; Sato, Keisuke; Hirakuri, Kenji; Miyasaka, Ryosuke; Tilley, Richard D; Manome, Yoshinobu

    2008-01-01

    Semiconductor quantum dots (QDs) hold some advantages over conventional organic fluorescent dyes. Due to these advantages, they are becoming increasingly popular in the field of bioimaging. However, recent work suggests that cadmium based QDs affect cellular activity. As a substitute for cadmium based QDs, we have developed photoluminescent stable silicon quantum dots (Si-QDs) with a passive-oxidation technique. Si-QDs (size: 6.5 ± 1.5 nm) emit green light, and they have been used as biological labels for living cell imaging. In order to determine the minimum concentration for cytotoxicity, we investigated the response of HeLa cells. We have shown that the toxicity of Si-QDs was not observed at 112 μg ml -1 and that Si-QDs were less toxic than CdSe-QDs at high concentration in mitochondrial assays and with lactate dehydrogenase (LDH) assays. Especially under UV exposure, Si-QDs were more than ten times safer than CdSe-QDs. We suggest that one mechanism for the cytotoxicity is that Si-QDs can generate oxygen radicals and these radicals are associated with membrane damages. This work has demonstrated the suitability of Si-QDs for bioimaging in lower concentration, and their cytotoxicity and one toxicity mechanism at high concentration

  7. Determination of anisotropic dipole moments in self-assembled quantum dots using Rabi oscillations

    OpenAIRE

    Muller, A.; Wang, Q. Q.; Bianucci, P.; Xue, Q. K.; Shih, C. K.

    2004-01-01

    By investigating the polarization-dependent Rabi oscillations using photoluminescence spectroscopy, we determined the respective transition dipole moments of the two excited excitonic states |Ex> and |Ey> of a single self-assembled quantum dot that are nondegenerate due to shape anisotropy. We find that the ratio of the two dipole moments is close to the physical elongation ratio of the quantum dot.

  8. Preparation and characterization of water-soluble ZnSe:Cu/ZnS core/shell quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lei; Cao, Lixin, E-mail: caolixin@ouc.edu.cn; Su, Ge; Liu, Wei; Xia, Chenghui; Zhou, Huajian

    2013-09-01

    The synthesis and luminescent properties of water-soluble ZnSe:Cu/ZnS core/shell quantum dots (QDs) with different shell thickness are reported in this paper. X-ray powder diffraction (XRD) studies present that the ZnSe:Cu/ZnS core/shell QDs with different shell thickness have a cubic zinc-blende structure. The tests of transmission electron microscope (TEM) pictures exhibit that the QDs obtained are spherical-shaped particles and the average grain size increased from 2.7 to 3.8 nm with the growth of ZnS shell. The emission peak position of QDs has a small redshift from 461 to 475 nm with the growth of ZnS shell within the blue spectral window. The photoluminescence (PL) emission intensity and stability of the ZnSe:Cu core d-dots are both enhanced by coating ZnS shell on the surface of core d-dots. The largest PL intensity of the core/shell QDs is almost 3 times larger than that of Cu doped ZnSe quantum dots (ZnSe:Cu d-dots). The redshift of core/shell QDs compared with the core QDs are observed in both the absorption and the photoluminescence excitation spectra.

  9. InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2003-01-01

    -dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour......Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum...

  10. Polyaniline/carbon nanotube/CdS quantum dot composites with enhanced optical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Goswami, Mrinmoy [Department of Physics, National Institute of Technology, Durgapur, 713209 (India); Ghosh, Ranajit, E-mail: ghosh.ranajit@gmail.com [CSIR-Central Mechanical Engineering Research Institute, Durgapur, 713209 (India); Maruyama, Takahiro [Department of Applied Chemistry, Meijo University, Nagoya, 4688502 (Japan); Meikap, Ajit Kumar [Department of Physics, National Institute of Technology, Durgapur, 713209 (India)

    2016-02-28

    Graphical abstract: - Highlights: • A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been synthesized via in-situ polymerization of aniline monomer. • A degree of increase in conductivity. • Size-dependent optical properties of CdS quantum dots have been observed. - Abstract: A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been developed via in-situ polymerization of aniline monomer in the presence of dispersed CdS quantum dots (size: 2.7–4.8 nm) and multi-walled carbon nanotubes (CNT), which exhibits enhanced optical and electrical properties. The existences of 1st order, 2nd order, and 3rd order longitudinal optical phonon modes, strongly indicate the high quality of synthesized CdS quantum dots. The occurrence of red shift of free exciton energy in photoluminescence is due to size dependent quantum confinement effect of CdS. The conductivity of the composites (for example PANI/CNT/CdS (2 wt.% CdS)) is increased by about 7 of magnitude compared to that of pure PANI indicating a charge transfer between CNT and polymer via CdS quantum dots. This advanced material has a great potential for high-performance of electro-optical applications.

  11. Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grown on GaAs substrate

    International Nuclear Information System (INIS)

    Motyka, M.; Kudrawiec, R.; Misiewicz, J.; Pucicki, D.; Tlaczala, M.; Fischer, M.; Marquardt, B.; Forchel, A.

    2007-01-01

    InAs quantum dots (QDs) with GaInNAs barriers grown on (001) GaAs substrate by molecular beam epitaxy have been studied by contactless electroreflectance (CER) and photoluminescence (PL) spectroscopies. It has been observed that the overgrowth of self-organized InAs QDs with GaInNAs layers effectively tunes the QD emission to the 1.3 μm spectral region. In case of PL spectra only one peak related to QD emission has been observed. In the case of CER spectra, in addition to a CER feature corresponding to the QD ground state, a rich spectrum of CER resonances related to optical transitions in InAs/GaInNAs/GaAs QW has been observed. It has been concluded that the application of GaInNAs instead InGaAs leads to better control of emission wavelength from InAs QDs since strains in GaInNAs can be tuned from compressive to tensile. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. The effect of temperature and dot size on the spectral properties of colloidal InP/ZnS core-shell quantum dots.

    Science.gov (United States)

    Narayanaswamy, Arun; Feiner, L F; Meijerink, A; van der Zaag, P J

    2009-09-22

    Visual color changes between 300 and 510 K were observed in the photoluminescence (PL) of colloidal InP/ZnS core-shell nanocrystals. A subsequent study of PL spectra in the range 2-510 K and fitting the temperature dependent line shift and line width to theoretical models show that the dominant (dephasing) interaction is due to scattering by acoustic phonons of about 23 meV. Low temperature photoluminescence excitation measurements show that the excitonic band gap depends approximately inversely linearly on the quantum dot size d, which is distinctly weaker than the dependence predicted by current theories.

  13. Use of CdS quantum dot-functionalized cellulose nanocrystal films for anti-counterfeiting applications

    Science.gov (United States)

    Chen, L.; Lai, C.; Marchewka, R.; Berry, R. M.; Tam, K. C.

    2016-07-01

    Structural colors and photoluminescence have been widely used for anti-counterfeiting and security applications. We report for the first time the use of CdS quantum dot (QD)-functionalized cellulose nanocrystals (CNCs) as building blocks to fabricate nanothin films via layer-by-layer (LBL) self-assembly for anti-counterfeiting applications. Both negatively- and positively-charged CNC/QD nanohybrids with a high colloidal stability and a narrow particle size distribution were prepared. The controllable LBL coating process was characterized by scanning electron microscopy and ellipsometry. The rigid structure of CNCs leads to nanoporous structured films on poly(ethylene terephthalate) (PET) substrates with high transmittance (above 70%) over the entire range of visible light and also resulted in increased hydrophilicity (contact angles of ~40 degrees). Nanothin films on PET substrates showed good flexibility and enhanced stability in both water and ethanol. The modified PET films with structural colors from thin-film interference and photoluminescence from QDs can be used in anti-counterfeiting applications.Structural colors and photoluminescence have been widely used for anti-counterfeiting and security applications. We report for the first time the use of CdS quantum dot (QD)-functionalized cellulose nanocrystals (CNCs) as building blocks to fabricate nanothin films via layer-by-layer (LBL) self-assembly for anti-counterfeiting applications. Both negatively- and positively-charged CNC/QD nanohybrids with a high colloidal stability and a narrow particle size distribution were prepared. The controllable LBL coating process was characterized by scanning electron microscopy and ellipsometry. The rigid structure of CNCs leads to nanoporous structured films on poly(ethylene terephthalate) (PET) substrates with high transmittance (above 70%) over the entire range of visible light and also resulted in increased hydrophilicity (contact angles of ~40 degrees). Nanothin films

  14. Electronic properties of excited states in single InAs quantum dots

    International Nuclear Information System (INIS)

    Warming, Till

    2009-01-01

    The application of quantum-mechanical effects in semiconductor nanostructures enables the realization of novel opto-electronic devices. Examples are given by single-photon emitters and emitters of entangled photon pairs, both being essential for quantum cryptography, or for qubit systems as needed for quantum computing. InAs/GaAs quantum dots are one of the most promising candidates for such applications. A detailed knowledge of the electronic properties of quantum dots is a prerequisite for this development. The aim of this work is an experimental access to the detailed electronic structure of the excited states in single InAs/GaAs quantum dots including few-particle effects and in particular exchange interaction. The experimental approach is micro photoluminescence excitation spectroscopy (μPLE). One of the main difficulties using μPLE to probe single QDs is the unambiguous assignment of the observed resonances in the spectrum to specific transitions. By comparing micro photoluminescence (μPL) and μPLE spectra, the identification of the main resonances becomes possible. The key is given by the fine structure of the hot trion. Excitation spectroscopy on single charged QDs enables for the first time the complete observation of a non-trivial fine structure of an excitonic complex in a QD, the hot trion. Modelling based on eight-band k.p theory in combination with a configuration interaction scheme is in excellent agreement. Therewith the simulation also enables realistic predictions on the fine structure of the ground-state exciton which is of large importance for single quantum dot devices. Theory concludes from the observed transitions that the structural symmetry of the QDs is broken. Micro photoluminescence excitation spectroscopy combined with resonantly excited micro photoluminescence enables an optical access to the single particle states of the hole without the influence of few-particle coulomb interactions. Based on this knowledge the exciton binding

  15. Brightly Luminescent and Color-Tunable Colloidal CH3NH3PbX3 (X = Br, I, Cl) Quantum Dots: Potential Alternatives for Display Technology.

    Science.gov (United States)

    Zhang, Feng; Zhong, Haizheng; Chen, Cheng; Wu, Xian-gang; Hu, Xiangmin; Huang, Hailong; Han, Junbo; Zou, Bingsuo; Dong, Yuping

    2015-04-28

    Organometal halide perovskites are inexpensive materials with desirable characteristics of color-tunable and narrow-band emissions for lighting and display technology, but they suffer from low photoluminescence quantum yields at low excitation fluencies. Here we developed a ligand-assisted reprecipitation strategy to fabricate brightly luminescent and color-tunable colloidal CH3NH3PbX3 (X = Br, I, Cl) quantum dots with absolute quantum yield up to 70% at room temperature and low excitation fluencies. To illustrate the photoluminescence enhancements in these quantum dots, we conducted comprehensive composition and surface characterizations and determined the time- and temperature-dependent photoluminescence spectra. Comparisons between small-sized CH3NH3PbBr3 quantum dots (average diameter 3.3 nm) and corresponding micrometer-sized bulk particles (2-8 μm) suggest that the intense increased photoluminescence quantum yield originates from the increase of exciton binding energy due to size reduction as well as proper chemical passivations of the Br-rich surface. We further demonstrated wide-color gamut white-light-emitting diodes using green emissive CH3NH3PbBr3 quantum dots and red emissive K2SiF6:Mn(4+) as color converters, providing enhanced color quality for display technology. Moreover, colloidal CH3NH3PbX3 quantum dots are expected to exhibit interesting nanoscale excitonic properties and also have other potential applications in lasers, electroluminescence devices, and optical sensors.

  16. Ultra-sensitive and selective Hg{sup 2+} detection based on fluorescent carbon dots

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ruihua; Li, Haitao; Kong, Weiqian; Liu, Juan [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123 (China); Liu, Yang, E-mail: yangl@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123 (China); Tong, Cuiyan, E-mail: tongcy959@nenu.edu.cn [Chemisty Department, Northeast Normal University, Changchun 130024 (China); Zhang, Xing [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123 (China); Kang, Zhenhui, E-mail: zhkang@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123 (China)

    2013-07-15

    Graphical abstract: Fluorescent carbon dots were efficiently synthesized by one-step sodium hydroxide-assisted reflux method from PEG and demonstrated to show high selectivity toward Hg2+ ions detection. - Highlights: • FCDs were synthesized by one-step sodium hydroxide-assisted reflux method from PEG. • The FCDs emit blue photoluminescence and have upconversion fluorescent property. • The FCDs show ultra-sensitive detective ability for Hg{sup 2+} ions. - Abstract: Fluorescent carbon dots (FCDs) were efficiently synthesized by one-step sodium hydroxide-assisted reflux method from poly(ethylene glycol) (PEG). The obtained FCDs exhibit excellent water-solubility and high stability. Under the UV irradiation, the FCDs could emit bright blue photoluminescence, and also they were found to show excellent up-conversion fluorescence. It was further demonstrated that such FCDs can serve as effective fluorescent sensing platform for Hg{sup 2+} ions detection with ultra-sensitivity and selectivity. The sensing system achieved a limit of detection as low as 1 fM, which is much lower than all the previous reported sensing systems for Hg{sup 2+} ions detection. This FCDs sensing system has been successfully applied for the analysis of Hg{sup 2+} ions in water samples from river, lake, and tap water, showing good practical feasibility.

  17. Shape, strain, and ordering of lateral InAs quantum dot molecules

    International Nuclear Information System (INIS)

    Krause, B.; Metzger, T.H.; Rastelli, A.; Songmuang, R.; Kiravittaya, S.; Schmidt, O. G.

    2005-01-01

    The results of an x-ray study on freestanding, self-assembled InAs/GaAs quantum dots grown by molecular beam epitaxy are presented. The studied samples cover the range from statistically distributed single quantum dots to quantum dot bimolecules, and finally to quantum dot quadmolecules. The x-ray diffraction data of the single quantum dots and the bimolecules, obtained in grazing incidence geometry, have been analyzed using the isostrain model. An extended version of the isostrain model has been developed, including the lateral arrangement of the quantum dots within a quantum dot molecule and the superposition of the scattering from different parts of the dots. This model has been applied to the scattering maps of all three samples. Quantitative information about the positions of the dots, the shape, and the lattice parameter distribution of their crystalline core has been obtained. For the single dot and the bimolecule, a strong similarity of the shape and lattice parameter distribution has been found, in agreement with the similarity of their photoluminescence spectra

  18. Spontaneous emission of quantum dots in disordered photonic crystal waveguides

    DEFF Research Database (Denmark)

    Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

    2010-01-01

    We report on the enhancement of the spontaneous emission rate of single semiconductor quantum dots embedded in a photonic crystal waveguide with engineered disorder. Random high-Q cavities, that are signature of Anderson localization, are measured in photoluminescence experiments and appear...... in the slow light regime of the waveguide mode. Time resolved experiments show a 15-fold enhancement of the spontaneous emission rate, with coupling efficiencies of single photons into Anderson localized cavity modes of 94%. These results show that the performances of Anderson-localized cavities...

  19. Influence of the quantum dot geometry on p -shell transitions in differently charged quantum dots

    Science.gov (United States)

    Holtkemper, M.; Reiter, D. E.; Kuhn, T.

    2018-02-01

    Absorption spectra of neutral, negatively, and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p -shell transitions, including the influence of nearby nominally dark states. Based on the envelope function approximation, we treat the four-band Luttinger theory as well as the direct and short-range exchange Coulomb interactions within a configuration interaction approach. The quantum dot confinement is approximated by an anisotropic harmonic potential. We present a detailed investigation of state mixing and correlations mediated by the individual interactions. Differences and similarities between the differently charged quantum dots are highlighted. Especially large differences between negatively and positively charged quantum dots become evident. We present a visualization of energetic shifts and state mixtures due to changes in size, in-plane asymmetry, and aspect ratio. Thereby we provide a better understanding of the experimentally hard to access question of quantum dot geometry effects. Our findings show a method to determine the in-plane asymmetry from photoluminescence excitation spectra. Furthermore, we supply basic knowledge for tailoring the strength of certain state mixtures or the energetic order of particular excited states via changes of the shape of the quantum dot. Such knowledge builds the basis to find the optimal QD geometry for possible applications and experiments using excited states.

  20. Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

    Science.gov (United States)

    Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

    2015-02-07

    Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

  1. Composition-dependent trap distributions in CdSe and InP quantum dots probed using photoluminescence blinking dynamics.

    Science.gov (United States)

    Chung, Heejae; Cho, Kyung-Sang; Koh, Weon-Kyu; Kim, Dongho; Kim, Jiwon

    2016-07-21

    Although Group II-VI quantum dots (QDs) have attracted much attention due to their wide range of applications in QD-based devices, the presence of toxic ions in II-VI QDs raises environmental concerns. To fulfill the demands of nontoxic QDs, synthetic routes for III-V QDs have been developed. However, only a few comparative analyses on optical properties of III-V QDs have been performed. In this study, the composition-related energetic trap distributions have been explored by using three different types of core/multishell QDs: CdSe-CdS (CdSe/CdS/ZnS), InP-ZnSe (InP/ZnSe/ZnS), and InP-GaP (InP/GaP/ZnS). It was shown that CdSe-CdS QDs have much larger trap densities than InP-shell QDs at higher energy states (at least 1Eg (band gap energy) above the lowest conduction band edge) based on probability density plots and Auger ionization efficiencies which are determined by analyses of photoluminescence blinking dynamics. This result suggests that the composition of encapsulated QDs is closely associated with the charge trapping processes, and also provides an insight into the development of more environmentally friendly QD-based devices.

  2. The spectral analysis and threshold limits of quasi-supercontinuum self-assembled quantum dot interband lasers

    KAUST Repository

    Tan, Cheeloon

    2009-09-01

    This paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening. The experimental and theoretical agreement of a room temperature (293 K) broadband laser emission confirms the presence of multiple-state lasing actions in highly inhomogeneous dot ensembles. The corresponding full-width half-maximum of the photoluminescence is 76 meV as opposed to those wideband lasing coverage at only low temperature (∼60 K) from typical quantum dot lasers. A newly proposed change of homogeneous broadening with injection that occurs only in highly inhomogeneous quantum dot system is critical to account for the continuous wideband lasing but not the conventional ideas of carrier dynamics in semiconductor lasers. In addition, the analysis of threshold conditions reveals that broadband lasing only occurs when the energy spacing between quantized energy states is comparable to the inhomogeneous broadening of quantum-dot nanostructures. The study is important in providing a picture of this novel device and realization of broad lasing coverage for diverse applications, especially in the research field of short-pulse generation and ultra-fast phenomena in semiconductor quantum-dot laser. © 2009 IEEE.

  3. Morphological and luminescent characteristics of GaN dots deposited on AlN by alternate supply of TMG and NH3

    International Nuclear Information System (INIS)

    Tsai, Y.-L.; Gong, J.-R.; Lin, T.-Y.; Lin, H.-Y.; Chen, Yang-Fang; Lin, K.-M.

    2006-01-01

    GaN dots were deposited on AlN underlayers by alternate supply of trimethylgallium (TMG) and ammonia (NH 3 ) in an inductively heated quartz reactor operated at atmospheric pressure. Various growth parameters including deposition temperature, TMG admittance and pulse time between TMG and NH 3 exposures were proposed to investigate the influence of growth parameters on the size distribution of GaN dots. It appears that GaN dots with uniform size distribution can be achieved under certain growth conditions. Based on the study of atomic force microscopy (AFM), high deposition temperature was found to be in favor of forming large GaN dots with small dot density. Decrement of TMG flow rate or reduction in the number of growth cycle tends to enable the formation of GaN dots with small dot sizes. The results of room temperature (RT) cathodoluminescence (CL) measurements of the GaN dots exhibit an emission peak at 3.735 eV. A remarkable blue shift of GaN dot emission was observed by reduced temperature photoluminescence (PL) measurements

  4. Binding Quantum Dots to Silk Biomaterials for Optical Sensing

    Directory of Open Access Journals (Sweden)

    Disi Lu

    2015-01-01

    Full Text Available Quantum dots (QDs, have great potential for fabricating optical sensing devices and imaging biomaterial degradation in vivo. In the present study, 2-mercaptoethylamine- (MEA- and mercaptopropionic acid- (MPA- capped CdTe-QDs were physically incorporated in silk films that contained a high content (>30% of crystalline beta-sheet structure. The beta-sheets were induced by the addition of glycerol, water annealing, glycerol/annealing, or treatment with methanol. Incorporation of QDs did not influence the formation of beta-sheets. When the films were extracted with water, most QDs remained associated with the silk, based on the retention of photoluminescence in the silk films and negligible photoluminescence in the extracts. Compared to the solution state, photoluminescence intensity significantly decreased for MEA-QDs but not for MPA-QDs in the silk films, while the emission maximum blue shifted (≈4 nm slightly for both. Further film digestion using protease XIV, alpha-chymotrypsin, and the combination of the two proteases suggested that QDs may be bound to the silk beta-sheet regions but not the amorphous regions. QDs photoluminescence in silk films was quenched when the concentration of hydrogen peroxide (H2O2 was above 0.2-0.3 mM, indicating the QDs-incorporated silk films can be used to report oxidation potential in solution.

  5. Spectroscopy of Charged Quantum Dot Molecules

    Science.gov (United States)

    Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.; Korenev, V. L.

    2006-03-01

    Spins of single charges in quantum dots are attractive for many quantum information and spintronic proposals. Scalable quantum information applications require the ability to entangle and operate on multiple spins in coupled quantum dots (CQDs). To further the understanding of these systems, we present detailed spectroscopic studies of InAs CQDs with control of the discrete electron or hole charging of the system. The optical spectrum reveals a pattern of energy anticrossings and crossings in the photoluminescence as a function of applied electric field. These features can be understood as a superposition of charge and spin configurations of the two dots and represent clear signatures of quantum mechanical coupling. The molecular resonance leading to these anticrossings is achieved at different electric fields for the optically excited (trion) states and the ground (hole) states allowing for the possibility of using the excited states for optically induced coupling of the qubits.

  6. Group-III vacancy induced InxGa1-xAs quantum dot interdiffusion

    International Nuclear Information System (INIS)

    Djie, H. S.; Wang, D.-N.; Ooi, B. S.; Hwang, J. C. M.; Gunawan, O.

    2006-01-01

    The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs/GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy H m for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs/AlGaAs quantum-well materials confirming the role of SiO 2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots

  7. Morphological and luminescent characteristics of GaN dots deposited on AlN by alternate supply of TMG and NH{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Y.-L. [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Gong, J.-R. [Institute of Opto-Mechatronics, National Chung Cheng University, Chiayi 621, Taiwan (China); Lin, T.-Y. [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan (China); Lin, H.-Y. [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Chen, Yang-Fang [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Lin, K.-M. [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China)

    2006-03-15

    GaN dots were deposited on AlN underlayers by alternate supply of trimethylgallium (TMG) and ammonia (NH{sub 3}) in an inductively heated quartz reactor operated at atmospheric pressure. Various growth parameters including deposition temperature, TMG admittance and pulse time between TMG and NH{sub 3} exposures were proposed to investigate the influence of growth parameters on the size distribution of GaN dots. It appears that GaN dots with uniform size distribution can be achieved under certain growth conditions. Based on the study of atomic force microscopy (AFM), high deposition temperature was found to be in favor of forming large GaN dots with small dot density. Decrement of TMG flow rate or reduction in the number of growth cycle tends to enable the formation of GaN dots with small dot sizes. The results of room temperature (RT) cathodoluminescence (CL) measurements of the GaN dots exhibit an emission peak at 3.735 eV. A remarkable blue shift of GaN dot emission was observed by reduced temperature photoluminescence (PL) measurements.

  8. Modification of g-C{sub 3}N{sub 4} nanosheets by carbon quantum dots for highly efficient photocatalytic generation of hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kui; Su, Feng-Yun; Zhang, Wei-De, E-mail: zhangwd@scut.edu.cn

    2016-07-01

    Graphical abstract: Carbon quantum dots-modified graphitic carbon nitride nanosheets (CNNS/CQDs) catalysts with high and stable activity for photocatalytic generation of hydrogen through water splitting were successfully constructed. - Highlights: • Composite photocatalysts based on g-C{sub 3}N{sub 4} nanosheets and CQDs were prepared. • High visible light photocatalytic activity for H{sub 2} evolution. • Effective separation and transfer of charge carriers. - Abstract: Carbon quantum dots (CQDs) were deposited onto graphite-like carbon nitride nanosheets (CNNS) to form CNNS/CQDs composites. The prepared CNNS/CQDs composites exhibit much higher photocatalytic activity under visible light irradiation than pure CNNS do. The CNNS/CQDs-7 sample displays the highest photocatalytic performance, with H{sub 2} production rate of 116.1 μmol h{sup −1}, which is three times of that over pure CNNS (37.8 μmol h{sup −1}). Photoluminescence spectroscopy and photoelectrochemical (PEC) analysis reveal that the CQDs are favorable for trapping electrons and promoting the separation of photogenerated electron-hole pairs in CNNS. A possible photocatalytic mechanism of the enhanced photocatalytic performance for H{sub 2} generation over CNNS/CQDs will be proposed in this paper.

  9. High quantum yield graphene quantum dots decorated TiO_2 nanotubes for enhancing photocatalytic activity

    International Nuclear Information System (INIS)

    Qu, Ailan; Xie, Haolong; Xu, Xinmei; Zhang, Yangyu; Wen, Shengwu; Cui, Yifan

    2016-01-01

    Highlights: • High concentration yellow GQDs and TiO_2 nanotubes were achieved by a simple and green method. • High quantum yield GQDs enhanced the photodegradation capacity of TiO_2 nanotube. • The catalytic performance of GQDs/TiO_2 depends on the GQDs loading. • The improved photocatalytic activity of GQDs/TiO_2 was attributed to three aspects. - Abstract: Graphene quantum dots (GQDs) with high quantum yield (about 23.6% at an excitation wavelength of 320 nm) and GQDs/TiO_2 nanotubes (GQDs/TiO_2 NTs) composites were achieved by a simple hydrothermal method at low temperature. Photoluminescence characterization showed that the GQDs exhibited the down-conversion PL features at excitation from 300 to 420 nm and up-conversion photoluminescence in the range of 600–800 nm. The photocatalytic activity of prepared GQDs/TiO_2 NTs composites on the degradation of methyl orange (MO) was significantly enhanced compared with that of pure TiO_2 nanotubes (TiO_2 NTs). For the composites coupling with 1.5%, 2.5% and 3.5% GQDs, the degradation of MO after 20 min irradiation under UV–vis light irradiation (λ = 380–780 nm) were 80.52%, 94.64% and 51.91%, respectively, which are much higher than that of pure TiO_2 NTs (35.41%). It was inferred from the results of characterization that the improved photocatalytic activity of the GQDs/TiO_2 NTs composites was attributed to the synergetic effect of up-conversion properties of the GQDs, enhanced visible light absorption and efficient separation of photogenerated electron-holes of the GQDs/TiO_2 composite.

  10. Directly deposited quantum dot solids using a colloidally stable nanoparticle ink

    KAUST Repository

    Fischer, Armin H.; Rollny, Lisa R.; Pan, Jun; Carey, Graham H.; Thon, Susanna; Hoogland, Sjoerd H.; Voznyy, Oleksandr; Zhitomirsky, David; Kim, Jinyoung; Bakr, Osman; Sargent, E. H.

    2013-01-01

    We develop a photovoltaic colloidal quantum dot ink that allows for lossless, single-step coating of large areas in a manufacturing-compatible process. Our materials strategy involves a solution-phase ligand exchange to transport compatible linkers that yield 1-thioglycerol-capped PbS quantum dots in dimethyl sulfoxide with a photoluminescence quantum yield of 24%. A proof-of-principle solar cell made from the ink exhibits 2.1% power conversion efficiency. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Directly deposited quantum dot solids using a colloidally stable nanoparticle ink

    KAUST Repository

    Fischer, Armin H.

    2013-08-12

    We develop a photovoltaic colloidal quantum dot ink that allows for lossless, single-step coating of large areas in a manufacturing-compatible process. Our materials strategy involves a solution-phase ligand exchange to transport compatible linkers that yield 1-thioglycerol-capped PbS quantum dots in dimethyl sulfoxide with a photoluminescence quantum yield of 24%. A proof-of-principle solar cell made from the ink exhibits 2.1% power conversion efficiency. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Site control technique for quantum dots using electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

    2014-05-15

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  13. Site control technique for quantum dots using electron beam induced deposition

    International Nuclear Information System (INIS)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-01-01

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement

  14. Novel and high-performance asymmetric micro-supercapacitors based on graphene quantum dots and polyaniline nanofibers

    Science.gov (United States)

    Liu, Wenwen; Yan, Xingbin; Chen, Jiangtao; Feng, Yaqiang; Xue, Qunji

    2013-06-01

    In comparison with graphene sheets, graphene quantum dots (GQDs) exhibit novel chemical/physical properties including nanometer-size, abundant edge defects, good electrical conductivity, high mobility, chemical inertia, stable photoluminescence and better surface grafting, making them promising for fabricating various novel devices. In the present work, an asymmetric micro-supercapacitor, using GQDs as negative active material and polyaniline (PANI) nanofibers as positive active material, is built for the first time by a simple and controllable two-step electro-deposition on interdigital finger gold electrodes. Electrochemical measurements reveal that the as-made GQDs//PANI asymmetric micro-supercapacitor has a more excellent rate capability (up to 1000 V s-1) than previously reported electrode materials, as well as faster power response capability (with a very short relaxation time constant of 115.9 μs) and better cycling stability after 1500 cycles in aqueous electrolyte. On this basis, an all-solid-state GQDs//PANI asymmetric micro-supercapacitor is fabricated using H3PO4-polyvinyl alcohol gel as electrolyte, which also exhibits desirable electrochemical capacitive performances. These encouraging results presented here may open up new insight into GQDs with highly promising applications in high-performance energy-storage devices, and further expand the potential applications of GQDs beyond the energy-oriented application of GQDs discussed above.In comparison with graphene sheets, graphene quantum dots (GQDs) exhibit novel chemical/physical properties including nanometer-size, abundant edge defects, good electrical conductivity, high mobility, chemical inertia, stable photoluminescence and better surface grafting, making them promising for fabricating various novel devices. In the present work, an asymmetric micro-supercapacitor, using GQDs as negative active material and polyaniline (PANI) nanofibers as positive active material, is built for the first time by a

  15. Tuning Single Quantum Dot Emission with a Micromirror.

    Science.gov (United States)

    Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

    2018-02-14

    The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

  16. Organic-inorganic hybrid carbon dots for cell imaging

    Science.gov (United States)

    Liu, Huan; Zhang, Hongwen; Li, Jiayu; Tang, Yuying; Cao, Yu; Jiang, Yan

    2018-04-01

    In this paper, nitrogen-doped carbon dots (CDs) had been synthesized directly by one-step ultrasonic treatment under mild conditions. During the functionalization process, Octa-aminopropyl polyhedral oligomeric silsesquioxane hydrochloride salt (OA-POSS) was used as stabilizing and passivation agent, which lead to self-assembling of CDs in aqueous medium solution. OA-POSS was obtained via hydrolytic condensation of γ-aminopropyl triethoxy silane (APTES). The average size of CDs prepared was approximately 3.3 nm with distribution between 2.5 nm and 4.5 nm. The prepared organic-inorganic hybrid carbon dots have several characteristics such as photoluminescence emission wavelength, efficient cellular uptake, and good biocompatibility. The results indicate that OA-POSS can maintain the fluorescence properties of the carbon dots effectively, and reduced cytotoxicity provides the possibility for biomedical applications. More than 89% of the Hela cells were viable when incubated with 2 mg ml‑1 or lesser organic-inorganic hybrid carbon dots. Thus, it provides a potential for multicolor imaging with HeLa cells.

  17. Green Synthesis of Fluorescent Carbon Dots for Selective Detection of Tartrazine in Food Samples.

    Science.gov (United States)

    Xu, Hua; Yang, Xiupei; Li, Gu; Zhao, Chuan; Liao, Xiangjun

    2015-08-05

    A simple, economical, and green method for the preparation of water-soluble, high-fluorescent carbon quantum dots (C-dots) has been developed via hydrothermal process using aloe as a carbon source. The synthesized C-dots were characterized by atomic force microscope (AFM), transmission electron microscopy (TEM), fluorescence spectrophotometer, UV-vis absorption spectra as well as Fourier transform infrared spectroscopy (FTIR). The results reveal that the as-prepared C-dots were spherical shape with an average diameter of 5 nm and emit bright yellow photoluminescence (PL) with a quantum yield of approximately 10.37%. The surface of the C-dots was rich in hydroxyl groups and presented various merits including high fluorescent quantum yield, excellent photostability, low toxicity and satisfactory solubility. Additionally, we found that one of the widely used synthetic food colorants, tartrazine, could result in a strong fluorescence quenching of the C-dots through a static quenching process. The decrease of fluorescence intensity made it possible to determine tartrazine in the linear range extending from 0.25 to 32.50 μM, This observation was further successfully applied for the determination of tartrazine in food samples collected from local markets, suggesting its great potential toward food routine analysis. Results from our study may shed light on the production of fluorescent and biocompatible nanocarbons due to our simple and environmental benign strategy to synthesize C-dots in which aloe was used as a carbon source.

  18. Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

    Energy Technology Data Exchange (ETDEWEB)

    Reid, Benjamin P. L., E-mail: benjamin.reid@physics.ox.ac.uk; Chan, Christopher C. S.; Taylor, Robert A. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kocher, Claudius [Department of Physics, University of Konstanz, Konstanz 78457 (Germany); Zhu, Tongtong; Oehler, Fabrice; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2015-04-27

    Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.

  19. Localized surface plasmon resonance enhanced photoluminescence of CdSe QDs in PMMA matrix on silver colloids with different shapes

    International Nuclear Information System (INIS)

    Lu Liu; Xu Xiaoliang; Shi Chaoshu; Ming Hai

    2010-01-01

    Localized surface plasmon resonance (LSPR) enhanced photoluminescences (PL) from CdSe quantum dots (QDs) on worm-like or quasi-spherical silver colloids have been investigated. The shape of silver colloid film is controlled by annealing temperature (200 o C∼350 o C). Strong PL enhancements of CdSe QDs on both as-grown and annealed silver colloid films are observed. The results show that the PL enhancement factor of CdSe QDs on worm-like silver colloid film reaches as high as 15-fold. Moreover, the enhancement factor is 5 times larger than that obtained from the quasi-spherical silver colloids. The superiority of worm-like silver nanostructure on LSPR enhanced photoluminescence is attributed to its larger size, hot spots and multiple dipole resonance modes coupling, which are induced by aggregation effect.

  20. Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

    International Nuclear Information System (INIS)

    Ramírez-Porras, A.; García, O.; Vargas, C.; Corrales, A.; Solís, J.D.

    2015-01-01

    Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models

  1. Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

    Energy Technology Data Exchange (ETDEWEB)

    Ramírez-Porras, A., E-mail: aramirez@fisica.ucr.ac.cr [Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); García, O. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Vargas, C. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Corrales, A. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Solís, J.D. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica)

    2015-08-30

    Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.

  2. Synthesis and Adsorption Study of BSA Surface Imprinted Polymer on CdS Quantum Dots

    Science.gov (United States)

    Tang, Ping-ping; Cai, Ji-bao; Su, Qing-de

    2010-04-01

    A new bovine serum albumin (BSA) surface imprinting method was developed by the incorporation of quantum dots (QDs) into molecularly imprinted polymers (MIP), which can offer shape selectivity. Preparation and adsorption conditions were optimized. Physical appearance of the QDs and QDs-MIP particles was illustrated by scanning electron microscope images. Photoluminescence emission of CdS was quenched when rebinding of the template. The quenching of photoluminescence emissions is presumably due to the fluorescence resonance energy transfer between quantum dots and BSA template molecules. The adsorption is compiled with Langmuir isotherm, and chemical adsorption is the rate-controlling step. The maximum adsorption capacity could reach 226.0 mg/g, which is 142.4 mg/g larger than that of undoped BSA MIP. This study demonstrates the validity of QDs coupled with MIP technology for analyzing BSA.

  3. A novel fluorescent retrograde neural tracer: cholera toxin B conjugated carbon dots

    Science.gov (United States)

    Zhou, Nan; Hao, Zeyu; Zhao, Xiaohuan; Maharjan, Suraj; Zhu, Shoujun; Song, Yubin; Yang, Bai; Lu, Laijin

    2015-09-01

    The retrograde neuroanatomical tracing method is a key technique to study the complex interconnections of the nervous system. Traditional tracers have several drawbacks, including time-consuming immunohistochemical or immunofluorescent staining procedures, rapid fluorescence quenching and low fluorescence intensity. Carbon dots (CDs) have been widely used as a fluorescent bio-probe due to their ultrasmall size, excellent optical properties, chemical stability, biocompatibility and low toxicity. Herein, we develop a novel fluorescent neural tracer: cholera toxin B-carbon dot conjugates (CTB-CDs). It can be taken up and retrogradely transported by neurons in the peripheral nervous system of rats. Our results show that CTB-CDs possess high photoluminescence intensity, good optical stability, a long shelf-life and non-toxicity. Tracing with CTB-CDs is a direct and more economical way of performing retrograde labelling experiments. Therefore, CTB-CDs are reliable fluorescent retrograde tracers.The retrograde neuroanatomical tracing method is a key technique to study the complex interconnections of the nervous system. Traditional tracers have several drawbacks, including time-consuming immunohistochemical or immunofluorescent staining procedures, rapid fluorescence quenching and low fluorescence intensity. Carbon dots (CDs) have been widely used as a fluorescent bio-probe due to their ultrasmall size, excellent optical properties, chemical stability, biocompatibility and low toxicity. Herein, we develop a novel fluorescent neural tracer: cholera toxin B-carbon dot conjugates (CTB-CDs). It can be taken up and retrogradely transported by neurons in the peripheral nervous system of rats. Our results show that CTB-CDs possess high photoluminescence intensity, good optical stability, a long shelf-life and non-toxicity. Tracing with CTB-CDs is a direct and more economical way of performing retrograde labelling experiments. Therefore, CTB-CDs are reliable fluorescent retrograde

  4. Determination of anisotropic dipole moments in self-assembled quantum dots using Rabi oscillations

    Science.gov (United States)

    Muller, Andreas; Wang, Qu-Quan; Bianucci, Pablo; Xue, Qi-Kun; Shih, Chih-Kang

    2004-03-01

    By investigating the polarization-dependent Rabi oscillations using photoluminescence spectroscopy, we determined the respective transition dipole moments of the two excited excitonic states |Ex> and |Ey> of a single self-assembled quantum dot that are nondegenerate due to shape anisotropy. We find that the ratio of the two dipole moments is close to the physical elongation ratio of the quantum dot. We also measured the ground state radiative lifetimes of several quantum dots. The dipole moments calculated from the latter are in reasonable agreement with the dipole moments determined from the periodicity of the Rabi oscillations.

  5. Dynamic Dipole-Dipole Interactions between Excitons in Quantum Dots of Different Sizes

    DEFF Research Database (Denmark)

    Matsueda, Hideaki; Leosson, Kristjan; Xu, Zhangcheng

    2005-01-01

    Micro-photoluminescence spectra of GaAs/AlGaAs coupled quantum dots (QDs) are given, and proposed to be analyzed by our resonance dynamic dipole-dipole interaction (RDDDI) model, based on parity inheritance and exchange of virtual photons among QDs of different sizes....

  6. Graphene Oxide Quantum Dots Exfoliated From Carbon Fibers by Microwave Irradiation: Two Photoluminescence Centers and Self-Assembly Behavior.

    Science.gov (United States)

    Yuan, Jian-Min; Zhao, Rui; Wu, Zhen-Jun; Li, Wei; Yang, Xin-Guo

    2018-04-17

    Graphene oxide quantum dots (GOQDs) attract great attention for their unique properties and promising application potential. The difficulty in the formation of a confined structure, and the numerous and diverse oxygen-containing functional groups results in a low emission yield to GOQDs. Here, GOQDs with a size of about 5 nm, exfoliated from carbon fibers by microwave irradiation, are detected and analyzed. The exfoliated GOQDs are deeply oxidized and induce large numbers of epoxy groups and ether bonds, but only a small amount of carbonyl groups and hydroxyl groups. The subdomains of sp 2 clusters, involving epoxy groups and ether bonds, are responsible for the two strong photoluminescence emissions of GOQDs under different excitation wavelengths. Moreover, GOQDs tend to self-assemble at the edges of their planes to form self-assembly films (SAFs) with the evaporation of water. SAFs can further assemble into different 3D patterns with unique microstructures such as sponge bulk, sponge ball, microsheet, sisal, and schistose coral, which are what applications such as supercapacitors, cells, catalysts, and electrochemical sensors need. This method for preparation of GOQDs is easy, quick, and environmentally friendly, and this work may open up new research interests about GOQDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. InAs(Sb) quantum dots grown on GaAs by MBE

    International Nuclear Information System (INIS)

    Sallet, V.; Patriarche, G.; Mauguin, O.; Largeau, L.; Travers, L.

    2006-01-01

    The MBE growth of InAs(Sb)/GaAs quantum dots is investigated. Photoluminescence shows a slight red-shift of the emission wavelength from 1.15 to 1.24 μm (InAs 0.95 Sb 0.05 dots). Attempts to incorporate higher concentrations of antimony lead to a poor optical quality and, occasionally, to a blue-shift. Trans-mission electron microscopy observations are discussed considering the surfactant effect of antimony. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 mu m

    DEFF Research Database (Denmark)

    Fiore, A.; Borri, Paola; Langbein, Wolfgang

    2000-01-01

    We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time...

  9. Synthesis and Properties of Water-Soluble Blue-Emitting Mn-Alloyed CdTe Quantum Dots

    Science.gov (United States)

    Tynkevych, Olena; Karavan, Volodymyr; Vorona, Igor; Filonenko, Svitlana; Khalavka, Yuriy

    2018-05-01

    In this work, we prepared CdTe quantum dots, and series of Cd1-xMnxTe-alloyed quantum dots with narrow size distribution by an ion-exchange reaction in water solution. We found that the photoluminescence peaks are shifted to higher energies with the increasing Mn2+ content. So far, this is the first report of blue-emitting CdTe-based quantum dots. By means of cyclic voltammetry, we detected features of electrochemical activity of manganese energy levels formed inside the Cd1-xMnxTe-alloyed quantum dot band gap. This allowed us to estimate their energy position. We also demonstrate paramagnetic behavior for Cd1-xMnxTe-alloyed quantum dots which confirmed the successful ion-exchange reaction.

  10. Synthesis and Properties of Water-Soluble Blue-Emitting Mn-Alloyed CdTe Quantum Dots.

    Science.gov (United States)

    Tynkevych, Olena; Karavan, Volodymyr; Vorona, Igor; Filonenko, Svitlana; Khalavka, Yuriy

    2018-05-02

    In this work, we prepared CdTe quantum dots, and series of Cd 1-x Mn x Te-alloyed quantum dots with narrow size distribution by an ion-exchange reaction in water solution. We found that the photoluminescence peaks are shifted to higher energies with the increasing Mn 2+ content. So far, this is the first report of blue-emitting CdTe-based quantum dots. By means of cyclic voltammetry, we detected features of electrochemical activity of manganese energy levels formed inside the Cd 1-x Mn x Te-alloyed quantum dot band gap. This allowed us to estimate their energy position. We also demonstrate paramagnetic behavior for Cd 1-x Mn x Te-alloyed quantum dots which confirmed the successful ion-exchange reaction.

  11. Double Super-Exchange in Silicon Quantum Dots Connected by Short-Bridged Networks

    Science.gov (United States)

    Li, Huashan; Wu, Zhigang; Lusk, Mark

    2013-03-01

    Silicon quantum dots (QDs) with diameters in the range of 1-2 nm are attractive for photovoltaic applications. They absorb photons more readily, transport excitons with greater efficiency, and show greater promise in multiple-exciton generation and hot carrier collection paradigms. However, their high excitonic binding energy makes it difficult to dissociate excitons into separate charge carriers. One possible remedy is to create dot assemblies in which a second material creates a Type-II heterojunction with the dot so that exciton dissociation occurs locally. This talk will focus on such a Type-II heterojunction paradigm in which QDs are connected via covalently bonded, short-bridge molecules. For such interpenetrating networks of dots and molecules, our first principles computational investigation shows that it is possible to rapidly and efficiently separate electrons to QDs and holes to bridge units. The bridge network serves as an efficient mediator of electron superexchange between QDs while the dots themselves play the complimentary role of efficient hole superexchange mediators. Dissociation, photoluminescence and carrier transport rates will be presented for bridge networks of silicon QDs that exhibit such double superexchange. This material is based upon work supported by the Renewable Energy Materials Research Science and Engineering Center (REMRSEC) under Grant No. DMR-0820518 and Golden Energy Computing Organization (GECO).

  12. Photoluminescence characteristics of InAs quantum dots grown by STM/MBE site-control technique

    Energy Technology Data Exchange (ETDEWEB)

    Nishikawa, S.; Kohmoto, S.; Nakamura, H.; Ishikawa, T.; Asakawa, K.; Wada, O. [Femtosecond Technology Research Association, Tsukuba, Ibaraki (Japan). FESTA Lab.

    2001-03-08

    This paper describes micro-photoluminescence (PL) analysis of site-controlled QDs (SCQDs) grown using a novel in-situ MBE growth technique in which sites of self-assembled InAs QDs are controlled by forming nanometer deposits using a scanning tunneling microscope (STM) probe. We found from the temperature dependence of PL that the carrier collection at QDs at low temperature is limited by carrier diffusion in the wetting layer. The analysis of PL data considering this effect has indicated that individual QDs grown have high crystalline quality in spite of the addition of an artificial STM process during growth. (orig.)

  13. Quantum Electrodynamics with Semiconductor Quantum Dots Coupled to Anderson‐localized Random Cavities

    DEFF Research Database (Denmark)

    Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

    2011-01-01

    of the spontaneous emission decay rate by up to a factor 15 and an efficiency of channeling single photons into Anderson-localized modes reaching values as high as 94%. These results prove that disordered photonic media provide an efficient platform for quantum electrodynamics, offering a novel route to quantum......We demonstrate that the spontaneous emission decay rate of semiconductor quantum dots can be strongly modified by the coupling to disorder-induced Anderson-localized photonic modes. We experimentally measure, by means of time-resolved photoluminescence spectroscopy, the enhancement...

  14. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Kalyuzhnyy, N. A.; Nadtochiy, A. M.; Maximov, M. V. [St. Petersburg Academic University (Russian Federation); Rouvimov, S. S. [University of Notre Dame (United States); Zhukov, A. E. [St. Petersburg Academic University (Russian Federation)

    2017-03-15

    The deposition of In{sub x}Ga{sub 1–x}As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In{sub x}Ga{sub 1–x}As thicknesses and compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.

  15. Low temperature synthesis of silicon quantum dots with plasma chemistry control in dual frequency non-thermal plasmas.

    Science.gov (United States)

    Sahu, Bibhuti Bhusan; Yin, Yongyi; Han, Jeon Geon; Shiratani, Masaharu

    2016-06-21

    The advanced materials process by non-thermal plasmas with a high plasma density allows the synthesis of small-to-big sized Si quantum dots by combining low-temperature deposition with superior crystalline quality in the background of an amorphous hydrogenated silicon nitride matrix. Here, we make quantum dot thin films in a reactive mixture of ammonia/silane/hydrogen utilizing dual-frequency capacitively coupled plasmas with high atomic hydrogen and nitrogen radical densities. Systematic data analysis using different film and plasma characterization tools reveals that the quantum dots with different sizes exhibit size dependent film properties, which are sensitively dependent on plasma characteristics. These films exhibit intense photoluminescence in the visible range with violet to orange colors and with narrow to broad widths (∼0.3-0.9 eV). The observed luminescence behavior can come from the quantum confinement effect, quasi-direct band-to-band recombination, and variation of atomic hydrogen and nitrogen radicals in the film growth network. The high luminescence yields in the visible range of the spectrum and size-tunable low-temperature synthesis with plasma and radical control make these quantum dot films good candidates for light emitting applications.

  16. Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels

    Energy Technology Data Exchange (ETDEWEB)

    Ban, Keun-Yong [Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer and Energy Engineering; Kim, Yeongho [Korea Research Inst. of Chemistry Technology (KRICT), Daejeon (Korea, Republic of). Division of Metrology for Future Technology; Kuciauskas, Darius [National Renewable Energy Lab. (NREL), Golden, CO (United States); Bremner, Stephen P. [Univ. of New South Wales, Sydney, NSW (Australia). School of Photovoltaic and Renewable Energy Engineering; Honsberg, Christiana B. [Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer and Energy Engineering

    2016-11-10

    The optical properties of InAs quantum dots (QDs) embedded in a GaAsSb matrix with different delta (d)-doping levels of 0, 2, 4, and 6 electrons per dot (e-/dot), incorporated to control the occupation of QD electronic states, are studied by photoluminescence (PL) spectroscopy. The time-resolved PL data taken at 10 K reveal that the increase of δ-doping density from 2 to 6 e-/dot decreases the recombination lifetime of carriers at ground states of the QDs from 996 ± 36 to 792 ± 19 ps, respectively. Furthermore, the carrier lifetime of the sample with 4 e-/dot is found to increase at a slower rate than that of the undoped sample as temperature increases above 70 K. An Arrhenius plot of the temperature dependent PL intensity indicates that the thermal activation energy of electrons in the QDs, required for carrier escape from the dot ground state to continuum state, is increased when the d-doping density is high enough (>4 e-/dot). These results are attributed to the enhanced Coulomb interaction of electrons provided by the d-doping, leading to reduced thermal quenching of the PL.

  17. CdZnTe quantum dots study: energy and phase relaxation process

    International Nuclear Information System (INIS)

    Viale, Yannick

    2004-01-01

    We present a study of the electron-hole pair energy and phase relaxation processes in a CdTe/ZnTe heterostructure, in which quantum dots are embedded. CdZnTe quantum wells with a high Zinc concentration, separated by ZnTe barriers, contain islands with a high cadmium concentration. In photoluminescence excitation spectroscopy experiments, we evidence two types of electron hole pair relaxation processes. After being excited in the CdZnTe quantum well, the pairs relax their energy by emitting a cascade of longitudinal optical phonons until they are trapped in the quantum dots. Before their radiative recombination follows an intra-dot relaxation, which is attributed to a lattice polarization mechanism of the quantum dots. It is related to the coupling between the electronic and the vibrational states. Both relaxation mechanisms are reinforced by the strong polar character of the chemical bond in II-VI compounds. Time resolved measurements of transmission variations in a pump-probe configuration allowed us to investigate the population dynamics of the electron-hole pairs during the relaxation process. We observe a relaxation time of about 2 ps for the longitudinal phonon emission cascade in the quantum well before a saturation of the quantum dot transition. We also measured an intra-box relaxation time of 25 ps. The comparison of various cascades allows us to estimate the emission time of a longitudinal optical phonon in the quantum well to be about 100 fs. In four waves mixing experiments, we observe oscillations that we attribute to quantum beats between excitonic and bi-excitonic transitions. The dephasing times that we measure as function of the density of photons shows that excitons are strongly localized in the quantum dots. The excitonic dephasing time is much shorter than the radiative lifetime and is thus controlled by the intra-dot relaxation time. (author) [fr

  18. Formation of self assembled PbTe quantum dots in CdTe on Si(111)

    Science.gov (United States)

    Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

    2010-01-01

    We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

  19. Synthesis of colloidal SnSe quantum dots by electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li Zhen; Peng Liwei; Fang Yaoguo; Chen Zhiwen [Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800 (China); Pan Dengyu [Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 201800 (China); Wu Minghong, E-mail: mhwu@staff.shu.edu.cn [Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800 (China)

    2011-12-15

    Water-soluble orthorhombic colloidal SnSe quantum dots with an average diameter of 4 nm were successfully prepared by a novel irradiation route using an electronic accelerator as a radiation source and hexadecyl trimethyl ammonium bromide (CTAB) as a surfactant. The quantum dots exhibit a large direct bandgap of 3.89 eV, greatly blue shifted compared with that of bulk SnSe (1.0 eV) due to the quantum confinement effect. The quantum dots show blue photoluminescence at {approx}420 nm. The influence of CTAB on the growth of the quantum dots was investigated and a possible reaction/growth mechanism was proposed. - Highlights: > A rapid, facile and green strategy is developed to synthesize SnSe QDs. > The raw materials are green and easily obtained. > The surfactant CTAB plays an important role in the formation of SnSe quantum dots. > The obtained SnSe QDs is well-dispersed with the average size of around 4 nm.

  20. Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

    DEFF Research Database (Denmark)

    Xu, Zhang-Cheng; Zhang, Ya-Ting; Hvam, Jørn Märcher

    2009-01-01

    The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which...

  1. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  2. Highly Fluorescent Ribonuclease-A-Encapsulated Lead Sulfide Quantum Dots for Ultrasensitive Fluorescence in Vivo Imaging in the Second Near-Infrared Window

    OpenAIRE

    Kong, Yifei; Chen, Jun; Fang, Hongwei; Heath, George; Wo, Yan; Wang, Weili; Li, Yunxia; Guo, Yuan; Evans, Stephen D.; Chen, Shiyi; Zhou, Dejian

    2016-01-01

    Ribonuclease-A (RNase-A) encapsulated PbS quantum dots (RNase-A@PbS Qdots) which emit in the second near-infrared biological window (NIR-II, ca. 1000?1400 nm) are rapidly synthesized under microwave heating. Photoluminescence (PL) spectra of the Qdots can be tuned across the entire NIR-II range by simply controlling synthesis temperature. The size and morphology of the Qdots are examined by transmission electron microscopy (TEM), atomic force microscopy (AFM), and dynamic light scattering (DL...

  3. Photo-stability of CsPbBr3 perovskite quantum dots for optoelectronic application

    NARCIS (Netherlands)

    Chen, Junsheng; Liu, Dongzhou; Al-Marri, Mohammed J.; Nuuttila, Lauri; Lehtivuori, Heli; Zheng, Kaibo

    Due to their superior photoluminescence (PL) quantum yield (QY) and tunable optical band gap, all-inorganic CsPbBr3 perovskite quantum dots (QDs) have attracted intensive attention for the application in solar cells, light emitting diodes (LED), photodetectors and laser devices. In this scenario,

  4. Complex logic functions implemented with quantum dot bionanophotonic circuits.

    Science.gov (United States)

    Claussen, Jonathan C; Hildebrandt, Niko; Susumu, Kimihiro; Ancona, Mario G; Medintz, Igor L

    2014-03-26

    We combine quantum dots (QDs) with long-lifetime terbium complexes (Tb), a near-IR Alexa Fluor dye (A647), and self-assembling peptides to demonstrate combinatorial and sequential bionanophotonic logic devices that function by time-gated Förster resonance energy transfer (FRET). Upon excitation, the Tb-QD-A647 FRET-complex produces time-dependent photoluminescent signatures from multi-FRET pathways enabled by the capacitor-like behavior of the Tb. The unique photoluminescent signatures are manipulated by ratiometrically varying dye/Tb inputs and collection time. Fluorescent output is converted into Boolean logic states to create complex arithmetic circuits including the half-adder/half-subtractor, 2:1 multiplexer/1:2 demultiplexer, and a 3-digit, 16-combination keypad lock.

  5. Strain release in metastable CdSe/CdS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Ke; Beane, Gary; Kelley, David F., E-mail: dfkelley@ucmerced.edu

    2016-06-01

    Highlights: • We have synthesized CdSe/CdS core/shell quantum dots in the “stable” and “metastable” regimes. • Annealing of metastable particles causes lattice strain release, producing hole-trapping defects. • Electron microscopy imaging is relatively insensitive to defects that result in rapid radiationless decay. - Abstract: It has recently been shown (J. Phys. Chem. Lett., 2015, 6, 1559) that high quantum yields (QYs) in zincblende CdSe/CdS quantum dots can be achieved when the lattice strain energy density is in the stable (0–0.59 eV/nm{sup 2}) or metastable (0.59–0.85 eV/nm{sup 2}) regime. Annealing of metastable particles causes a dramatic reduction in the observed QY and a red shift of the absorbance and photoluminescence. In this work we demonstrate that the decline in QY upon annealing is due to the formation of hole traps. These traps, while dramatically affecting the observed QY, produce no significant changes in either morphology or crystallinity as determined by high resolution transmission electron microscopy (HRTEM).

  6. Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

    Science.gov (United States)

    Reshchikov, M. A.; Willyard, A. G.; Behrends, A.; Bakin, A.; Waag, A.

    2011-10-01

    We report on the fabrication of GaN co-doped with silicon and zinc by metalorganic vapor phase epitaxy and a detailed study of photoluminescence in this material. We observe an exceptionally high absolute internal quantum efficiency of blue photoluminescence in GaN:Zn,Si. The value of 0.93±0.04 has been obtained from several approaches based on rate equations.

  7. Combination of a Sample Pretreatment Microfluidic Device with a Photoluminescent Graphene Oxide Quantum Dot Sensor for Trace Lead Detection.

    Science.gov (United States)

    Park, Minsu; Ha, Hyun Dong; Kim, Yong Tae; Jung, Jae Hwan; Kim, Shin-Hyun; Kim, Do Hyun; Seo, Tae Seok

    2015-11-03

    A novel trace lead ion (Pb(2+)) detection platform by combining a microfluidic sample pretreatment device with a DNA aptamer linked photoluminescent graphene oxide quantum dot (GOQD) sensor was proposed. The multilayered microdevice included a microchamber which was packed with cation exchange resins for preconcentrating metal ions. The sample loading and recovery were automatically actuated by a peristaltic polydimethylsiloxane micropump with a flow rate of 84 μL/min. Effects of the micropump actuation time, metal ion concentration, pH, and the volumes of the sample and eluent on the metal ion capture and preconcentration efficiency were investigated on a chip. The Pb(2+) samples whose concentrations ranged from 0.48 nM to 1.2 μM were successfully recovered with a preconcentration factor value between 4 and 5. Then, the preconcentrated metal ions were quantitatively analyzed with a DNA aptamer modified GOQD. The DNA aptamer on the GOQD specifically captured the target Pb(2+) which can induce electron transfer from GOQD to Pb(2+) upon UV irradiation, thereby resulting in the fluorescence quenching of the GOQD. The disturbing effect of foreign anions on the Pb(2+) detection and the spiked Pb(2+) real samples were also analyzed. The proposed GOQD metal ion sensor exhibited highly sensitive Pb(2+) detection with a detection limit of 0.64 nM and a dynamic range from 1 to 1000 nM. The on-chip preconcentration of the trace metal ions from a large-volume sample followed by the metal ion detection by the fluorescent GOQD sensor can provide an advanced platform for on-site water pollution screening.

  8. Trap elimination and reduction of size dispersion due to aging in CdS x Se1- x quantum dots

    Science.gov (United States)

    Verma, Abhishek; Nagpal, Swati; Pandey, Praveen K.; Bhatnagar, P. K.; Mathur, P. C.

    2007-12-01

    Quantum Dots of CdS x Se1- x embedded in borosilicate glass matrix have been grown using Double-Step annealing method. Optical characterization of the quantum dots has been done through the combinative analysis of optical absorption and photoluminescence spectroscopy at room temperature. Decreasing trend of photoluminescence intensity with aging has been observed and is attributed to trap elimination. The changes in particle size, size distribution, number of quantum dots, volume fraction, trap related phenomenon and Gibbs free energy of quantum dots, has been explained on the basis of the diffusion-controlled growth process, which continues with passage of time. For a typical case, it was found that after 24 months of aging, the average radii increased from 3.05 to 3.12 nm with the increase in number of quantum dots by 190% and the size-dispersion decreased from 10.8% to 9.9%. For this sample, the initial size range of the quantum dots was 2.85 to 3.18 nm. After that no significant change was found in these parameters for the next 12 months. This shows that the system attains almost a stable nature after 24 months of aging. It was also observed that the size-dispersion in quantum dots reduces with the increase in annealing duration, but at the cost of quantum confinement effect. Therefore, a trade off optimization has to be done between the size-dispersion and the quantum confinement.

  9. Photoluminescence investigation of ZnO quantum dots surface modified with silane coupling agent as a capping agent

    Energy Technology Data Exchange (ETDEWEB)

    Moghaddam, E., E-mail: e.moghaddam@merc.ac.ir; Youzbashi, A.A; Kazemzadeh, A.; Eshraghi, M.J.

    2015-12-15

    This report presents the luminescence measurement results of surface modified zinc oxide quantum dots (ZnO QDs) performed with different concentrations of 3-aminopropyltriethoxysilane (APTES) as a capping agent. Surface modification was performed by an in situ procedure on the surface of ZnO QDs in a sol gel solution route. The modified samples were characterized by various analytical techniques such as XRD, TEM, FT-IR, and UV–vis spectroscopy. Surface modification efficiency was experimentally investigated by variation of the photoluminescence) PL (emission intensities observed by changing the capping agent concentration. In order to investigate the effectiveness of the capping agent on the stability of the QDs, The PL spectra of the surface modified ZnO QDs were compared with that of unmodified ZnO QDs. Molecular layer of this type and similar silane based molecules with a variety of surface terminations that have the same molecular attachment schemes should enable interface engineering in optimizing the chemical selectivity of ZnO biosensors or electrical and optical properties of ZnO-polymer hybrid films. - Highlights: • Surface modification of ZnO QDs resulted in the small- size QDs (around 2 nm). • Surface modification resulted in the enhancement of the UV emission upon quenching the visible emission. • Surface modification efficiency was decreased with reduction of the QD size • Intensified stability of the surface modified ZnO QDs was obtained from surface modification.

  10. A novel one-pot room-temperature synthesis route to produce very small photoluminescent silicon nanocrystals

    Science.gov (United States)

    Douglas-Gallardo, Oscar A.; Burgos-Paci, Maxi A.; Mendoza-Cruz, Rubén; Putnam, Karl G.; Josefina Arellano-Jiménez, M.; José-Yacamán, Miguel; Mariscal, Marcelo M.; Macagno, Vicente A.; Sánchez, Cristián G.; Pérez, Manuel A.

    2018-03-01

    A novel strategy to synthesize photoluminescent silicon nanocrystals (SiNCs) from a reaction between tetraethylorthosilicate (TEOS) and trimethyl-hexadecyl-ammonium borohydride (CTABH4) in organic solvent is presented. The formation reaction occurs spontaneously at room temperature in homogeneous phase. The produced silicon nanocrystals are characterized by using their photoluminescent properties and via HRTEM. In addition, theoretical calculations of the optical absorption spectrum of silicon quantum dots in vacuum with different sizes and surface moieties were performed in order to compare with the experimental findings. The new chemical reaction is simple and can be implemented to produce silicon nanocrystal with regular laboratory materials by performing easy and safe procedures. [Figure not available: see fulltext.

  11. The electronic properties of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Barker, J.A.

    2000-10-01

    This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state

  12. High quantum yield graphene quantum dots decorated TiO{sub 2} nanotubes for enhancing photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Qu, Ailan, E-mail: qal67@163.com; Xie, Haolong; Xu, Xinmei; Zhang, Yangyu; Wen, Shengwu; Cui, Yifan

    2016-07-01

    Highlights: • High concentration yellow GQDs and TiO{sub 2} nanotubes were achieved by a simple and green method. • High quantum yield GQDs enhanced the photodegradation capacity of TiO{sub 2} nanotube. • The catalytic performance of GQDs/TiO{sub 2} depends on the GQDs loading. • The improved photocatalytic activity of GQDs/TiO{sub 2} was attributed to three aspects. - Abstract: Graphene quantum dots (GQDs) with high quantum yield (about 23.6% at an excitation wavelength of 320 nm) and GQDs/TiO{sub 2} nanotubes (GQDs/TiO{sub 2} NTs) composites were achieved by a simple hydrothermal method at low temperature. Photoluminescence characterization showed that the GQDs exhibited the down-conversion PL features at excitation from 300 to 420 nm and up-conversion photoluminescence in the range of 600–800 nm. The photocatalytic activity of prepared GQDs/TiO{sub 2} NTs composites on the degradation of methyl orange (MO) was significantly enhanced compared with that of pure TiO{sub 2} nanotubes (TiO{sub 2} NTs). For the composites coupling with 1.5%, 2.5% and 3.5% GQDs, the degradation of MO after 20 min irradiation under UV–vis light irradiation (λ = 380–780 nm) were 80.52%, 94.64% and 51.91%, respectively, which are much higher than that of pure TiO{sub 2} NTs (35.41%). It was inferred from the results of characterization that the improved photocatalytic activity of the GQDs/TiO{sub 2} NTs composites was attributed to the synergetic effect of up-conversion properties of the GQDs, enhanced visible light absorption and efficient separation of photogenerated electron-holes of the GQDs/TiO{sub 2} composite.

  13. Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

    Energy Technology Data Exchange (ETDEWEB)

    Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

    2011-03-15

    The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Formation Mechanism of Carbogenic Nanoparticles with Dual Photoluminescence Emission

    KAUST Repository

    Krysmann, Marta J.

    2012-01-18

    We present a systematic investigation of the formation mechanism of carbogenic nanoparticles (CNPs), otherwise referred to as C-dots, by following the pyrolysis of citric acid (CA)-ethanolamine (EA) precursor at different temperatures. Pyrolysis at 180 °C leads to a CNP molecular precursor with a strongly intense photoluminescence (PL) spectrum and high quantum yield formed by dehydration of CA-EA. At higher temperatures (230 °C) a carbogenic core starts forming and the PL is due to the presence of both molecular fluorophores and the carbogenic core. CNPs that exhibit mostly or exclusively PL arising from carbogenic cores are obtained at even higher temperatures (300 and 400 °C, respectively). Since the molecular fluorophores predominate at low pyrolysis temperatures while the carbogenic core starts forming at higher temperatures, the PL behavior of CNPs strongly depends on the conditions used for their synthesis. © 2011 American Chemical Society.

  15. Plasmon-Enhanced Photoluminescence of an Amorphous Silicon Quantum Dot Light-Emitting Device by Localized Surface Plasmon Polaritons in Ag/SiOx:a-Si QDs/Ag Sandwich Nanostructures

    Directory of Open Access Journals (Sweden)

    Tsung-Han Tsai

    2015-01-01

    Full Text Available We investigated experimentally the plasmon-enhanced photoluminescence of the amorphous silicon quantum dots (a-Si QDs light-emitting devices (LEDs with the Ag/SiOx:a-Si QDs/Ag sandwich nanostructures, through the coupling between the a-Si QDs and localized surface plasmons polaritons (LSPPs mode, by tuning a one-dimensional (1D Ag grating on the top. The coupling of surface plasmons at the top and bottom Ag/SiOx:a-Si QDs interfaces resulted in the localized surface plasmon polaritons (LSPPs confined underneath the Ag lines, which exhibit the Fabry-Pérot resonance. From the Raman spectrum, it proves the existence of a-Si QDs embedded in Si-rich SiOx film (SiOx:a-Si QDs at a low annealing temperature (300°C to prevent the possible diffusion of Ag atoms from Ag film. The photoluminescence (PL spectra of a-Si QDs can be precisely tuned by a 1D Ag grating with different pitches and Ag line widths were investigated. An optimized Ag grating structure, with 500 nm pitch and 125 nm Ag line width, was found to achieve up to 4.8-fold PL enhancement at 526 nm and 2.46-fold PL integrated intensity compared to the a-Si QDs LEDs without Ag grating structure, due to the strong a-Si QDs-LSPPs coupling.

  16. Reduced graphene oxide-germanium quantum dot nanocomposite: electronic, optical and magnetic properties

    Science.gov (United States)

    Amollo, Tabitha A.; Mola, Genene T.; Nyamori, Vincent O.

    2017-12-01

    Graphene provides numerous possibilities for structural modification and functionalization of its carbon backbone. Localized magnetic moments can, as well, be induced in graphene by the formation of structural defects which include vacancies, edges, and adatoms. In this work, graphene was functionalized using germanium atoms, we report the effect of the Ge ad atoms on the structural, electrical, optical and magnetic properties of graphene. Reduced graphene oxide (rGO)-germanium quantum dot nanocomposites of high crystalline quality were synthesized by the microwave-assisted solvothermal reaction. Highly crystalline spherical shaped germanium quantum dots, of diameter ranging between 1.6-9.0 nm, are anchored on the basal planes of rGO. The nanocomposites exhibit high electrical conductivity with a sheet resistance of up to 16 Ω sq-1. The electrical conductivity is observed to increase with the increase in Ge content in the nanocomposites. High defect-induced magnetization is attained in the composites via germanium adatoms. The evolution of the magnetic moments in the nanocomposites and the coercivity showed marked dependence on the Ge quantum dots size and concentration. Quantum confinement effects is evidenced in the UV-vis absorbance spectra and photoluminescence emission spectra of the nanocomposites which show marked size-dependence. The composites manifest strong absorption in the UV region, strong luminescence in the near UV region, and a moderate luminescence in the visible region.

  17. Highly Efficient Spontaneous Emission from Self-Assembled Quantum Dots

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Lund-Hansen, Toke; Hvam, Jørn Märcher

    2006-01-01

    We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency.......We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency....

  18. Effect of water chemistry on the aggregation and photoluminescence behavior of carbon dots.

    Science.gov (United States)

    Bayati, Mohamed; Dai, Jingjing; Zambrana, Austin; Rees, Chloe; Fidalgo de Cortalezzi, Maria

    2018-03-01

    Carbon dots are rapidly emerging carbon-based nanomaterials that, due to their growing applications, will inevitable find their way to natural waters; however, their environmental fate is mostly unknown. Carbon dots with different surface functionality were fabricated and characterized by TEM and FT-IR. Their surface charge, given by the zeta potential, and their hydrodynamic diameter in suspension were investigated under a variety of environmentally relevant conditions. The effect of ionic strength was studied in the presence of monovalent (NaCl) and divalent (CaCl 2 ) cations, for pH levels from 3 to 11; humic acid was used as a model for dissolved natural organic matter. Total potential energies of interactions were modeled by classical DLVO theory. The experimental results showed that water chemistry altered the surface charge of the nanomaterials, but their hydrodynamic size could not be correlated to those changes. Evidence of specific interactions was found for the amino functionalized particles in most cases, as well as the plain carbon dots in the presence of Ca 2+ and humic acid. Nanoparticles remained largely stable in suspension, with some exception at the highest ionic strength considered. DLVO theory did not adequately capture the aggregation behavior of the system. Moreover, cation and/or humic acid adsorption negatively affected the emission intensity of the particles, suggesting limitations to their use in natural water sensing applications. The particular stability shown by the carbon dots results in exposure to organisms in the water column and the possibility of contamination transported to significant distances from their source. Copyright © 2017. Published by Elsevier B.V.

  19. Tuning the Emission Energy of Chemically Doped Graphene Quantum Dots

    Directory of Open Access Journals (Sweden)

    Noor-Ul-Ain

    2016-11-01

    Full Text Available Tuning the emission energy of graphene quantum dots (GQDs and understanding the reason of tunability is essential for the GOD function in optoelectronic devices. Besides material-based challenges, the way to realize chemical doping and band gap tuning also pose a serious challenge. In this study, we tuned the emission energy of GQDs by substitutional doping using chlorine, nitrogen, boron, sodium, and potassium dopants in solution form. Photoluminescence data obtained from (Cl- and N-doped GQDs and (B-, Na-, and K-doped GQDs, respectively exhibited red- and blue-shift with respect to the photoluminescence of the undoped GQDs. X-ray photoemission spectroscopy (XPS revealed that oxygen functional groups were attached to GQDs. We qualitatively correlate red-shift of the photoluminescence with the oxygen functional groups using literature references which demonstrates that more oxygen containing groups leads to the formation of more defect states and is the reason of observed red-shift of luminescence in GQDs. Further on, time resolved photoluminescence measurements of Cl- and N-GQDs demonstrated that Cl substitution in GQDs has effective role in radiative transition whereas in N-GQDs leads to photoluminescence (PL quenching with non-radiative transition to ground state. Presumably oxidation or reduction processes cause a change of effective size and the bandgap.

  20. Tellurium quantum dots: Preparation and optical properties

    Science.gov (United States)

    Lu, Chaoyu; Li, Xueming; Tang, Libin; Lai, Sin Ki; Rogée, Lukas; Teng, Kar Seng; Qian, Fuli; Zhou, Liangliang; Lau, Shu Ping

    2017-08-01

    Herein, we report an effective and simple method for producing Tellurium Quantum dots (TeQDs), zero-dimensional nanomaterials with great prospects for biomedical applications. Their preparation is based on the ultrasonic exfoliation of Te powder dispersed in 1-methyl-2-pyrrolidone. Sonication causes the van der Waals forces between the structural hexagons of Te to break so that the relatively coarse powder breaks down into nanoscale particles. The TeQDs have an average size of about 4 nm. UV-Vis absorption spectra of the TeQDs showed an absorption peak at 288 nm. Photoluminescence excitation (PLE) and photoluminescence (PL) are used to study the optical properties of TeQDs. Both the PLE and PL peaks revealed a linear relationship against the emission and excitation energies, respectively. TeQDs have important potential applications in biological imaging and catalysis as well as optoelectronics.

  1. Hydrostatic pressure effects on the state density and optical transitions in quantum dots

    International Nuclear Information System (INIS)

    Galindez-Ramirez, G; Perez-Merchancano, S T; Paredes Gutierrez, H; Gonzalez, J D

    2010-01-01

    Using the effective mass approximation and variational method we have computed the effects of hydrostatic pressure on the absorption and photoluminescence spectra in spherical quantum dot GaAs-(Ga, Al) As, considering a finite confinement potential of this particular work we show the optical transitions in quantum of various sizes in the presence of hydrogenic impurities and hydrostatic pressure effects. Our first result describes the spectrum of optical absorption of 500 A QD for different values of hydrostatic pressure P = 0, 20 and 40 Kbar. The absorption peaks are sensitive to the displacement of the impurity center to the edge of the quantum dot and even more when the hydrostatic pressure changes in both cases showing that to the extent that these two effects are stronger quantum dots respond more efficiently. Also this result can be seen in the study of the photoluminescence spectrum as in the case of acceptor impurities consider them more efficiently capture carriers or electrons that pass from the conduction band to the valence band. Density states with randomly distributed impurity show that the additional peaks in the curves of the density of impurity states appear due to the presence of the additional hydrostatic pressure effects.

  2. InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

    Science.gov (United States)

    Teubert, J.; Koslowski, S.; Lippert, S.; Schäfer, M.; Wallys, J.; Dimitrakopulos, G.; Kehagias, Th.; Komninou, Ph.; Das, A.; Monroy, E.; Eickhoff, M.

    2013-08-01

    We investigated the electric-field dependence of the photoluminescence-emission properties of InGaN/GaN quantum dot multilayers in contact with an electrolyte. Controlled variations of the surface potential were achieved by the application of external electric fields using the electrolytic Schottky contact and by variation of the solution's pH value. Prior to characterization, a selective electrochemical passivation process was required to suppress leakage currents. The quantum dot luminescence is strongly affected by surface potential variations, i.e., it increases exponentially with cathodic bias and acidic pH values. The results cannot be explained by a modification of intra-dot polarization induced electric fields via the quantum confined Stark effect but are attributed to the suppression/enhancement of non-radiative recombination processes, i.e., mainly hole transfer into the electrolyte. The results establish a link between the photoluminescence intensity and the magnitude of electric fields at the semiconductor/electrolyte interface.

  3. Synthesis of Aqueous CdTe/CdS/ZnS Core/shell/shell Quantum Dots by a Chemical Aerosol Flow Method

    Directory of Open Access Journals (Sweden)

    Chen Dong

    2009-01-01

    Full Text Available Abstract This work described a continuous method to synthesize CdTe/CdS/ZnS core/shell/shell quantum dots. In an integrated system by flawlessly combining the chemical aerosol flow system working at high temperature (200–300°C to generate CdTe/CdS intermediate products and an additional heat-up setup at relatively low temperature to overcoat the ZnS shells, the CdTe/CdS/ZnS multishell structures were realized. The as-synthesized CdTe/CdS/ZnS core/shell/shell quantum dots are characterized by photoluminescence spectra, X-ray diffraction (XRD, energy-dispersive X-ray spectra (EDS, transmission electron microscopy (TEM, and high-resolution transmission electron microscopy (HRTEM. Fluorescence and XRD results confirm that the obtained quantum dots have a core/shell/shell structure. It shows the highest quantum yield above 45% when compared to the rhodamine 6G. The core/shell/shell QDs were more stable via the oxidation experiment by H2O2.

  4. Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation

    Directory of Open Access Journals (Sweden)

    Sajid Hussain

    2016-03-01

    Full Text Available Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. However, the single-dot occupancy per hole is often made difficult by the fact that lithographically-defined holes are generally much larger than the dots, thus providing several nucleation sites per hole. In addition, deposition of a thin GaAs buffer before the dots tends to further widen the holes in the [110] direction. We have explored a method of native surface oxide removal by using indium beams, which effectively prevents hole elongation along [110] and greatly helps single-dot occupancy per hole. Furthermore, as compared to Ga-assisted deoxidation, In-assisted deoxidation is efficient in completely removing surface contaminants, and any excess In can be easily re-desorbed thermally, thus leaving a clean, smooth GaAs surface. Low temperature photoluminescence showed that inhomogeneous broadening is substantially reduced for QDs grown on In-deoxidized patterns, with respect to planar self-assembled dots.

  5. Hydrothermal synthesis of highly luminescent blue-emitting ZnSe(S) quantum dots exhibiting low toxicity

    Energy Technology Data Exchange (ETDEWEB)

    Mirnajafizadeh, Fatemeh; Ramsey, Deborah; McAlpine, Shelli [School of Chemistry, University of New South Wales, Sydney, NSW 2052 (Australia); Wang, Fan; Reece, Peter [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Stride, John Arron, E-mail: j.stride@unsw.edu.au [School of Chemistry, University of New South Wales, Sydney, NSW 2052 (Australia); Bragg Institute, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia)

    2016-07-01

    Highly luminescent quantum dots (QDs) that emit in the visible spectrum are of interest to a number of imaging technologies, not least that of biological samples. One issue that hinders the application of luminescent markers in biology is the potential toxicity of the fluorophore. Here we show that hydrothermally synthesized ZnSe(S) QDs have low cytotoxicity to both human colorectal carcinoma cells (HCT-116) and human skin fibroblast cells (WS1). The QDs exhibited a high degree of crystallinity, with a strong blue photoluminescence at up to 29% quantum yield relative to 4′,6-diamidino-2-phenylindole (DAPI) without post-synthetic UV-irradiation. Confocal microscopy images obtained of HCT-116 cells after incubation with the QDs highlighted the stability of the particles in cell media. Cytotoxicity studies showed that both HCT-116 and WS1 cells retain 100% viability after treatment with the QDs at concentrations up to 0.5 g/L, which makes them of potential use in biological imaging applications. - Highlights: • Highly luminescent ZnSe(S) QDs were synthesized using a simple, one-step hydrothermal method. • The as-synthesized QDs were found to be nontoxic in the presence of biological cells. • The QDs were stable in biological media with identical emission profile to that in water.

  6. Microscopic origin of the fast blue-green luminescence of chemically synthesized non-oxidized silicon quantum dots

    NARCIS (Netherlands)

    Dohnalova, K.; Fucikova, A.; Umesh, C.P.; Humpolickova, J.; Paulusse, Jos Marie Johannes; Valenta, J.; Zuilhof, H.

    2012-01-01

    The microscopic origin of the bright nanosecond blue-green photoluminescence (PL), frequently reported for synthesized organically terminated Si quantum dots (Si-QDs), has not been fully resolved, hampering potential applications of this interesting material. Here a comprehensive study of the PL

  7. Microscopic Origin of the Fast Blue-Green Luminescence from Chemically Synthesized Non-Oxidized Silicon Quantum Dots

    NARCIS (Netherlands)

    Dohnalová, K.; Gregorkiewicz, T.; Fucíková, A.; Valenta, J.; Umesh, C.; Paulusse, J.M.J.; Zuilhof, H.; Humpolícková, J.; Hof, van M.

    2012-01-01

    The microscopic origin of the bright nanosecond blue-green photoluminescence (PL), frequently reported for synthesized organically terminated Si quantum dots (Si-QDs), has not been fully resolved, hampering potential applications of this interesting material. Here a comprehensive study of the PL

  8. Photonic engineering of highly linearly polarized quantum dot emission at telecommunication wavelengths

    Science.gov (United States)

    Mrowiński, P.; Emmerling, M.; Schneider, C.; Reithmaier, J. P.; Misiewicz, J.; Höfling, S.; Sek, G.

    2018-04-01

    In this work, we discuss a method to control the polarization anisotropy of spontaneous emission from neutral excitons confined in quantum-dot-like nanostructures, namely single epitaxial InAs quantum dashes emitting at telecom wavelengths. The nanostructures are embedded inside lithographically defined, in-plane asymmetric photonic mesa structures, which generate polarization-dependent photonic confinement. First, we study the influence of the photonic confinement on the polarization anisotropy of the emission by photoluminescence spectroscopy, and we find evidence of different contributions to a degree of linear polarization (DOLP), i.e., from the quantum dash and the photonic mesa, in total giving rise to DOLP =0.85 . Then, we perform finite-difference time-domain simulations of photonic confinement, and we calculate the DOLP in a dipole approximation showing well-matched results for the established model. Furthermore, by using numerical calculations, we demonstrate several types of photonic confinements where highly linearly polarized emission with DOLP of about 0.9 is possible by controlling the position of a quantum emitter inside the photonic structure. Then, we elaborate on anisotropic quantum emitters allowing for exceeding DOLP =0.95 in an optimized case, and we discuss the ways towards efficient linearly polarized single photon source at telecom bands.

  9. Optical transition pathways in type-II Ga(As)Sb quantum dots

    International Nuclear Information System (INIS)

    Gradkowski, Kamil; Ochalski, Tomasz J.; Williams, David P.; Tatebayashi, Jun; Khoshakhlagh, Arezou; Balakrishnan, Ganesh; O'Reilly, Eoin P.; Huyet, Guillaume; Dawson, Larry R.; Huffaker, Diana L.

    2009-01-01

    We present results of room temperature photoreflectance (PR) and photoluminescence (PL) measurements of molecular-beam epitaxy (MBE)-grown GaAsSb/GaAs quantum dot structures: one with an In 0.14 Ga 0.86 As capping quantum well and one without it. PL was used to determine the structures' ground-state transition energies. This result was employed in an 8-band k.p Hamiltonian to achieve a band structure of the structures, which have different electron confinement. The dot emission energies suggest a large amount of As incorporation into the dots, which is due to enhanced adatom mixing at a higher than normal growth temperature of 510 deg. C. Our calculations indicate a dot composition of 25-50% Sb gives the best fit to experiment. This uncertainty in composition arises due to the fact that different bowing parameters of the ternary alloy could be applied in the calculations. The theoretical analysis accounts well for the main feature in the PR spectra of both samples

  10. Trap elimination and reduction of size dispersion due to aging in CdS{sub x}Se{sub 1-x} quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Abhishek [University of Delhi South Campus, Department of Electronic Science (India)], E-mail: abhiverma10@gmail.com; Nagpal, Swati [University of Delhi, Department of Physics and Electronics, Rajdhani College (India); Pandey, Praveen K.; Bhatnagar, P. K.; Mathur, P. C. [University of Delhi South Campus, Department of Electronic Science (India)

    2007-12-15

    Quantum Dots of CdS{sub x}Se{sub 1-x} embedded in borosilicate glass matrix have been grown using Double-Step annealing method. Optical characterization of the quantum dots has been done through the combinative analysis of optical absorption and photoluminescence spectroscopy at room temperature. Decreasing trend of photoluminescence intensity with aging has been observed and is attributed to trap elimination. The changes in particle size, size distribution, number of quantum dots, volume fraction, trap related phenomenon and Gibbs free energy of quantum dots, has been explained on the basis of the diffusion-controlled growth process, which continues with passage of time. For a typical case, it was found that after 24 months of aging, the average radii increased from 3.05 to 3.12 nm with the increase in number of quantum dots by 190% and the size-dispersion decreased from 10.8% to 9.9%. For this sample, the initial size range of the quantum dots was 2.85 to 3.18 nm. After that no significant change was found in these parameters for the next 12 months. This shows that the system attains almost a stable nature after 24 months of aging. It was also observed that the size-dispersion in quantum dots reduces with the increase in annealing duration, but at the cost of quantum confinement effect. Therefore, a trade off optimization has to be done between the size-dispersion and the quantum confinement.

  11. Optical properties of individual site-controlled Ge quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Grydlik, Martyna, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany); Brehm, Moritz, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Tayagaki, Takeshi [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Langer, Gregor; Schäffler, Friedrich [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany)

    2015-06-22

    We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

  12. Double Tunneling Injection Quantum Dot Lasers for High Speed Operation

    Science.gov (United States)

    2017-10-23

    Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation The views, opinions and/or findings contained in this report are those of...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6...State University Title: Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation Report Term: 0-Other Email: asryan@vt.edu Distribution

  13. Ratiometric two-photon excited photoluminescence of quantum dots triggered by near-infrared-light for real-time detection of nitric oxide release in situ

    International Nuclear Information System (INIS)

    Jin, Hui; Gui, Rijun; Sun, Jie; Wang, Yanfeng

    2016-01-01

    Probe-donor integrated nanocomposites were developed from conjugating silica-coated Mn"2"+:ZnS quantum dots (QDs) with MoS_2 QDs and photosensitive nitric oxide (NO) donors (Fe_4S_3(NO)_7"−, RBS). Under excitation with near-infrared (NIR) light at 808 nm, the Mn"2"+:ZnS@SiO_2/MoS_2-RBS nanocomposites showed the dual-emissive two-photon excited photoluminescence (TPEPL) that induced RBS photolysis to release NO in situ. NO caused TPEPL quenching of Mn"2"+:ZnS QDs, but it produced almost no impact on the TPEPL of MoS_2 QDs. Hence, the nanocomposites were developed as a novel QDs-based ratiometric TPEPL probe for real-time detection of NO release in situ. The ratiometric TPEPL intensity is nearly linear (R"2 = 0.9901) with NO concentration in the range of 0.01∼0.8 μM, which corresponds to the range of NO release time (0∼15 min). The detection limit was calculated to be approximately 4 nM of NO. Experimental results confirmed that this novel ratiometric TPEPL probe possessed high selectivity and sensitivity for the detection of NO against potential competitors, and especially showed high detection performance for NIR-light triggered NO release in tumor intracellular microenvironments. These results would promote the development of versatile probe-donor integrated systems, also providing a facile and efficient strategy to real-time detect the highly controllable drug release in situ, especially in physiological microenvironments. - Highlights: • Mn"2"+:ZnS@SiO_2/MoS_2-RBS nanocomposites were developed as a novel ratiometric two-photon excited fluorescence probe. • This probe could conduct real-time detection of nitric oxide release in situ. • High feasibility of this probe was confirmed in tumor intracellular microenvironments.

  14. Dispersion of the electron g factor anisotropy in InAs/InP self-assembled quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Belykh, V. V., E-mail: vasilii.belykh@tu-dortmund.de [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Yakovlev, D. R.; Bayer, M. [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Schindler, J. J. [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); Bree, J. van; Koenraad, P. M.; Silov, A. Yu., E-mail: A.Y.Silov@tue.nl [Department of Applied Physics and COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Averkiev, N. S. [Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

    2016-08-28

    The electron g factor in an ensemble of InAs/InP quantum dots with emission wavelengths around 1.4 μm is measured using time-resolved pump-probe Faraday rotation spectroscopy in different magnetic field orientations. Thereby, we can extend recent single dot photoluminescence measurements significantly towards lower optical transition energies through 0.86 eV. This allows us to obtain detailed insight into the dispersion of the recently discovered g factor anisotropy in these infrared emitting quantum dots. We find with decreasing transition energy over a range of 50 meV a strong enhancement of the g factor difference between magnetic field normal and along the dot growth axis, namely, from 1 to 1.7. We argue that the g factor cannot be solely determined by the confinement energy, but the dot asymmetry underlying this anisotropy therefore has to increase with increasing dot size.

  15. Hydrophobic perfluoro-silane functionalization of porous silicon photoluminescent films and particles

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, C.; Laplace, P.; Gallach-Pérez, D.; Pellacani, P.; Martín-Palma, R.J. [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Torres-Costa, V. [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Ceccone, G. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020, Ispra (Italy); Manso Silván, M., E-mail: miguel.manso@uam.es [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain)

    2016-09-01

    Highlights: • Hydrophobic functionalization of porous silicon structures. • Perfluorooctyl group binding confirmed by XPS. • Improved stability face to extreme oxidation conditions. • Perfluorooctyl functionalization compatible with photoluminescence of porous silicon particles. - Abstract: Luminescent structures based on semiconductor quantum dots (QDs) are increasingly used in biomolecular assays, cell tracking systems, and in-vivo diagnostics devices. In this work we have carried out the functionalization of porous silicon (PSi) luminescent structures by a perfluorosilane (Perfluoro-octyltriethoxysilane, PFOS) self assembly. The PFOS surface binding (traced by X-ray photoelectron spectroscopy) and photoluminescence efficiency were analyzed on flat model PSi. Maximal photoluminescence intensity was obtained from PSi layers anodized at 110 mA/cm{sup 2}. Resistance to hydroxylation was assayed in H{sub 2}O{sub 2}:ethanol solutions and evidenced by water contact angle (WCA) measurements. PFOS-functionalized PSi presented systematically higher WCA than untreated PSi. The PFOS functionalization was found to slightly improve the aging of the PSi particles in water giving rise to particles with longer luminescent life. Confirmation of PFOS binding to PSi particles was derived from FTIR spectra and the preservation of luminescence was observed by fluorescence microscopy. Such functionalization opens the possibility of promoting hydrophobic-hydrophobic interactions between biomolecules and fluorescent QD structures, which may enlarge their biomedical applications catalogue.

  16. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

    Energy Technology Data Exchange (ETDEWEB)

    Robert, C., E-mail: cedric.robert@insa.rennes.fr [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Thanh, T. Nguyen; Létoublon, A.; Perrin, M.; Cornet, C.; Levallois, C.; Jancu, J.M.; Even, J. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France); Balocchi, A.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse (France); Durand, O.; Le Corre, A. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France)

    2013-08-31

    AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments. - Highlights: ► An active zone is proposed for a pseudomorphic laser structure on Si. ► Cladding layers are proposed for a pseudomorphic laser structure on Si. ► The AlGaP alloy is studied by X-ray diffraction and spectroscopic ellipsometry. ► InGaAs/GaP quantum dots are studied by scanning tunnelling microscopy. ► InGaAs/GaP quantum dots are studied by time-resolved photoluminescence.

  17. Versatile Tri(pyrazolyl)phosphanes as Phosphorus Precursors for the Synthesis of Highly Emitting InP/ZnS Quantum Dots.

    Science.gov (United States)

    Panzer, René; Guhrenz, Chris; Haubold, Danny; Hübner, René; Gaponik, Nikolai; Eychmüller, Alexander; Weigand, Jan J

    2017-11-13

    Tri(pyrazolyl)phosphanes (5 R1,R2 ) are utilized as an alternative, cheap and low-toxic phosphorus source for the convenient synthesis of InP/ZnS quantum dots (QDs). From these precursors, remarkably long-term stable stock solutions (>6 months) of P(OLA) 3 (OLAH=oleylamine) are generated from which the respective pyrazoles are conveniently recovered. P(OLA) 3 acts simultaneously as phosphorus source and reducing agent in the synthesis of highly emitting InP/ZnS core/shell QDs. These QDs are characterized by a spectral range between 530-620 nm and photoluminescence quantum yields (PL QYs) between 51-62 %. A proof-of-concept white light-emitting diode (LED) applying the InP/ZnS QDs as a color-conversion layer was built to demonstrate their applicability and processibility. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Highly photoluminescent europium tetraphenylimidodiphosphinate ternary complexes with heteroaromatic co-ligands. Solution and solid state studies

    Energy Technology Data Exchange (ETDEWEB)

    Pietraszkiewicz, Marek, E-mail: mpietraszkiewicz@ichf.edu.pl [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw (Poland); Pietraszkiewicz, Oksana; Karpiuk, Jerzy; Majka, Alina [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw (Poland); Dutkiewicz, Grzegorz; Borowiak, Teresa [Adam Mickiewicz University, Faculty of Chemistry, Department of Crystallography, Grunwaldzka 6, 60-780 Poznań (Poland); Kaczmarek, Anna M. [L3–Luminescent Lanthanide Lab, f-element coordination chemistry, Ghent University, Department of Inorganic and Physical Chemistry, Krijgslaan 281, Building S3, 9000 Gent (Belgium); Van Deun, Rik, E-mail: rik.vandeun@ugent.be [L3–Luminescent Lanthanide Lab, f-element coordination chemistry, Ghent University, Department of Inorganic and Physical Chemistry, Krijgslaan 281, Building S3, 9000 Gent (Belgium)

    2016-02-15

    Tetraphenylimidodiphosphinate (tpip) forms neutral 3:1 complexes with lanthanide ions. These complexes can accommodate one ancillary planar heterocyclic ligand to complement their coordination sphere of Eu{sup 3+} to coordination number 8. Several co-ligands were tested to form new complexes: 1,10-phenanthroline, bathophenanthroline, 2,4,6-tris(2-pyridyl)-1,3,5-triazine, dipyrido[3,2-f:2′,3′-h]quinoxaline and 2,2′:6′,2′′-terpyridine. The addition of heterocyclic N,N-bidentate co-ligands to the coordination sphere results in a dramatic (by a factor of 45–50) luminescence enhancement of the parent Eu(tpip){sub 3}. The solid-state measurements confirmed that the ancillary ligands strongly increased the photoluminescence quantum yield (PLQY) of the investigated complexes. - Highlights: • We have disovered highly photoluminescent ternary Eu(III) complexes. • They consist of Eu(III) tetraphenylimidodiphosphinate, and planar heterocyclic ligands. • The increase in photoluminescence quantum yields in solution is enhanced up to 50 times in solution. • The solid-state photoluminescence exceeds 80% at room temperature.

  19. Highly photoluminescent europium tetraphenylimidodiphosphinate ternary complexes with heteroaromatic co-ligands. Solution and solid state studies

    International Nuclear Information System (INIS)

    Pietraszkiewicz, Marek; Pietraszkiewicz, Oksana; Karpiuk, Jerzy; Majka, Alina; Dutkiewicz, Grzegorz; Borowiak, Teresa; Kaczmarek, Anna M.; Van Deun, Rik

    2016-01-01

    Tetraphenylimidodiphosphinate (tpip) forms neutral 3:1 complexes with lanthanide ions. These complexes can accommodate one ancillary planar heterocyclic ligand to complement their coordination sphere of Eu 3+ to coordination number 8. Several co-ligands were tested to form new complexes: 1,10-phenanthroline, bathophenanthroline, 2,4,6-tris(2-pyridyl)-1,3,5-triazine, dipyrido[3,2-f:2′,3′-h]quinoxaline and 2,2′:6′,2′′-terpyridine. The addition of heterocyclic N,N-bidentate co-ligands to the coordination sphere results in a dramatic (by a factor of 45–50) luminescence enhancement of the parent Eu(tpip) 3 . The solid-state measurements confirmed that the ancillary ligands strongly increased the photoluminescence quantum yield (PLQY) of the investigated complexes. - Highlights: • We have disovered highly photoluminescent ternary Eu(III) complexes. • They consist of Eu(III) tetraphenylimidodiphosphinate, and planar heterocyclic ligands. • The increase in photoluminescence quantum yields in solution is enhanced up to 50 times in solution. • The solid-state photoluminescence exceeds 80% at room temperature.

  20. Engineering iodine-doped carbon dots as dual-modal probes for fluorescence and X-ray CT imaging

    Directory of Open Access Journals (Sweden)

    Zhang M

    2015-11-01

    Full Text Available Miaomiao Zhang,1,* Huixiang Ju,2,* Li Zhang,1,* Mingzhong Sun,2 Zhongwei Zhou,2 Zhenyu Dai,3 Lirong Zhang,1 Aihua Gong,1 Chaoyao Wu,1 Fengyi Du1 1School of Medicine, Jiangsu University, Zhenjiang, People’s Republic of China; 2Department of Clinical Laboratory, Affiliated Yancheng Hospital, School of Medicine, Southeast University, Yancheng, Jiangsu, People’s Republic of China; 3Radiology Department, Affiliated Yancheng Hospital, School of Medicine, Southeast University, Yancheng, Jiangsu, People’s Republic of China *These authors contributed equally to this work Abstract: X-ray computed tomography (CT is the most commonly used imaging technique for noninvasive diagnosis of disease. In order to improve tissue specificity and prevent adverse effects, we report the design and synthesis of iodine-doped carbon dots (I-doped CDs as efficient CT contrast agents and fluorescence probe by a facile bottom-up hydrothermal carbonization process. The as-prepared I-doped CDs are monodispersed spherical nanoparticles (a diameter of ~2.7 nm with favorable dispersibility and colloidal stability in water. The aqueous solution of I-doped CDs showed wavelength-dependent excitation and stable photoluminescence similar to traditional carbon quantum dots. Importantly, I-doped CDs displayed superior X-ray attenuation properties in vitro and excellent biocompatibility. After intravenous injection, I-doped CDs were distributed throughout the body and excreted by renal clearance. These findings validated that I-doped CDs with high X-ray attenuation potency and favorable photoluminescence show great promise for biomedical research and disease diagnosis. Keywords: carbon dots, contrast agents, iodine-doped, CT imaging

  1. Colloidal quantum dot photovoltaics: The effect of polydispersity

    KAUST Repository

    Zhitomirsky, David

    2012-02-08

    The size-effect tunability of colloidal quantum dots enables facile engineering of the bandgap at the time of nanoparticle synthesis. The dependence of effective bandgap on nanoparticle size also presents a challenge if the size dispersion, hence bandgap variability, is not well-controlled within a given quantum dot solid. The impact of this polydispersity is well-studied in luminescent devices as well as in unipolar electronic transport; however, the requirements on monodispersity have yet to be quantified in photovoltaics. Here we carry out a series of combined experimental and model-based studies aimed at clarifying, and quantifying, the importance of quantum dot monodispersity in photovoltaics. We successfully predict, using a simple model, the dependence of both open-circuit voltage and photoluminescence behavior on the density of small-bandgap (large-diameter) quantum dot inclusions. The model requires inclusion of trap states to explain the experimental data quantitatively. We then explore using this same experimentally tested model the implications of a broadened quantum dot population on device performance. We report that present-day colloidal quantum dot photovoltaic devices with typical inhomogeneous linewidths of 100-150 meV are dominated by surface traps, and it is for this reason that they see marginal benefit from reduction in polydispersity. Upon eliminating surface traps, achieving inhomogeneous broadening of 50 meV or less will lead to device performance that sees very little deleterious impact from polydispersity. © 2012 American Chemical Society.

  2. Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

    Science.gov (United States)

    Colocci, M.; Vinattieri, A.; Lippi, L.; Bogani, F.; Rosa-Clot, M.; Taddei, S.; Bosacchi, A.; Franchi, S.; Frigeri, P.

    1999-01-01

    Multilayer structures of InAs quantum dots have been studied by means of photoluminescence techniques. A strong increase of the radiative lifetime with increasing number of stacked dot layers has been observed at low temperatures. Moreover, a strong temperature dependence of the radiative lifetime, which is not present in the single layer samples, has been found in the multistacked structures. The observed effects are nicely explained as a consequence of the electronic coupling between electrons and holes induced by vertical ordering.

  3. Room temperature excitation spectroscopy of single quantum dots

    Directory of Open Access Journals (Sweden)

    Christian Blum

    2011-08-01

    Full Text Available We report a single molecule detection scheme to investigate excitation spectra of single emitters at room temperature. We demonstrate the potential of single emitter photoluminescence excitation spectroscopy by recording excitation spectra of single CdSe nanocrystals over a wide spectral range of 100 nm. The spectra exhibit emission intermittency, characteristic of single emitters. We observe large variations in the spectra close to the band edge, which represent the individual heterogeneity of the observed quantum dots. We also find specific excitation wavelengths for which the single quantum dots analyzed show an increased propensity for a transition to a long-lived dark state. We expect that the additional capability of recording excitation spectra at room temperature from single emitters will enable insights into the photophysics of emitters that so far have remained inaccessible.

  4. Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.

    Science.gov (United States)

    Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E

    2015-09-25

    Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.

  5. A simple and sensitive fluorescent sensor for methyl parathion based on L-tyrosine methyl ester functionalized carbon dots.

    Science.gov (United States)

    Hou, Juying; Dong, Jing; Zhu, Haishuang; Teng, Xue; Ai, Shiyun; Mang, Minglin

    2015-06-15

    In this paper, a simple and sensitive fluorescent sensor for methyl parathion is developed based on L-tyrosine methyl ester functionalized carbon dots (Tyr-CDs) and tyrosinase system. The carbon dots are obtained by simple hydrothermal reaction using citric acid as carbon resource and L-tyrosine methyl ester as modification reagent. The carbon dots are characterized by transmission electron microscope, high resolution transmission electron microscopy, X-ray diffraction spectrum, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. The carbon dots show strong and stable photoluminescence with a quantum yield of 3.8%. Tyrosinase can catalyze the oxidation of tyrosine methyl ester on the surface of carbon dots to corresponding quinone products, which can quench the fluorescence of carbon dots. When organophosphorus pesticides (OPs) are introduced in system, they can decrease the enzyme activity, thus decrease the fluorescence quenching rate. Methyl parathion, as a model of OPs, was detected. Experimental results show that the enzyme inhibition rate is proportional to the logarithm of the methyl parathion concentration in the range 1.0×10(-10)-1.0×10(-4) M with the detection limit (S/N=3) of 4.8×10(-11) M. This determination method shows a low detection limit, wide linear range, good selectivity and high reproducibility. This sensing system has been successfully used for the analysis of cabbage, milk and fruit juice samples. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Growth and characterization of InP/In0.48Ga0.52P quantum dots optimized for single-photon emission

    International Nuclear Information System (INIS)

    Ugur, Asli

    2012-01-01

    In this work the growth of self-assembled InP/InGaP quantum dots, as well as their optical and structural properties are presented and discussed. The QDs were grown on In 0.48 Ga 0.52 P, lattice matched to GaAs. Self-assembled InP quantum dots are grown using gas-source molecular beam epitaxy over a wide range of InP deposition rates, using an ultra-low growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/μm 2 is realized. The resulting isolated InP quantum dots are individually characterized without the need for lithographical patterning and masks on the substrate. Both excitonic and biexcitonic emissions are observed from single dots, appearing as doublets with a fine-structure splitting of 320 μeV. Hanbury Brown-Twiss correlation measurements for the excitonic emission under cw excitation show anti-bunching behavior with an autocorrelation value of g (2) (0)=0.2. This system is applicable as a single-photon source for applications such as quantum cryptography. The formation of well-ordered chains of InP quantum dots on GaAs (001) substrates by using self-organized In 0.48 Ga 0.52 P surface undulations as a template is also demonstrated. The ordering requires neither stacked layers of quantum dots nor substrate misorientation. The structures are investigated by polarization-dependent photoluminescence together with transmission electron microscopy. Luminescence from the In 0.48 Ga 0.52 P matrix is polarized in one crystallographic direction due to anisotropic strain arising from a lateral compositional modulation. The photoluminescence measurements show enhanced linear polarization in the alignment direction of quantum dots. A polarization degree of 66% is observed. The optical anisotropy is achieved with a straightforward heterostructure, requiring only a single layer of QDs.

  7. Surface processes during purification of InP quantum dots

    Directory of Open Access Journals (Sweden)

    Natalia Mordvinova

    2014-08-01

    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  8. Cadmium sulfide quantum dots stabilized by castor oil and ricinoleic acid

    Science.gov (United States)

    Kyobe, Joseph William; Mubofu, Egid Beatus; Makame, Yahya M. M.; Mlowe, Sixberth; Revaprasadu, Neerish

    2016-02-01

    Castor oil and ricinoleic acid (an isolate of castor oil) are environmentally friendly bio-based organic surfactants that have been used as capping agents to prepare nearly spherical cadmium sulfide quantum dots (QDs) at 230, 250 and 280 °C. The prepared quantum dots were characterized by Ultra violet-visible (UV-vis), Photoluminescence (PL), Transmission Electron Microscopy (TEM), High Resolution Transmission Electron Microscopy (HRTEM) and X-ray diffraction (XRD) giving an overall CdS QDs average size of 5.14±0.39 nm. The broad XRD pattern and crystal lattice fringes in the HRTEM images showed a hexagonal phase composition of the CdS QDs. The calculated/estimated average size of the prepared castor oil capped CdS QDs for various techniques were 4.64 nm (TEM), 4.65 nm (EMA), 5.35 nm (UV-vis) and 6.46 nm (XRD). For ricinoleic acid capped CdS QDs, the average sizes were 5.56 nm (TEM), 4.78 nm (EMA), 5.52 nm (UV-vis) and 8.21 nm (XRD). Optical properties of CdS QDs showed a change of band gap energy from its bulk band gap of 2.42-2.82 eV due to quantum size confinement effect for temperature range of 230-280 °C. Similarly, a blue shift was observed in the photoluminescence spectra. Scanning electron microscope (SEM) observations show that the as-synthesized CdS QDs structures are spherical in shape. Fourier transform infra-red (FTIR) studies confirms the formation of castor oil and ricinoleic acid capped CdS QDs.

  9. Excited state dynamics in In0.5Al0.04Ga0.46As/Al0.08Ga0.92As self-assembled quantum dots

    DEFF Research Database (Denmark)

    Smith, L.M.; Leosson, Kristjan; Østergaard, John Erland

    2001-01-01

    We use time-resolved photoluminescence spectroscopy to probe the relaxation of excited states in In0.5Al0.04Ga0.40As/Al0.08Ga0.92As self-assembled quantum dots. The relaxation rate of excitons confined to the quantum dots increases by nearly an order of magnitude as the energy of the states...... approaches the top of the quantum dot potential. This dramatic change in the dynamics of these states reflects the increasing complexity of the states localized near the top of the quantum dots....

  10. Electronic properties of excited states in single InAs quantum dots; Elektronische Struktur angeregter Zustaende einzelner InAs-Quantenpunkte

    Energy Technology Data Exchange (ETDEWEB)

    Warming, Till

    2009-02-20

    The application of quantum-mechanical effects in semiconductor nanostructures enables the realization of novel opto-electronic devices. Examples are given by single-photon emitters and emitters of entangled photon pairs, both being essential for quantum cryptography, or for qubit systems as needed for quantum computing. InAs/GaAs quantum dots are one of the most promising candidates for such applications. A detailed knowledge of the electronic properties of quantum dots is a prerequisite for this development. The aim of this work is an experimental access to the detailed electronic structure of the excited states in single InAs/GaAs quantum dots including few-particle effects and in particular exchange interaction. The experimental approach is micro photoluminescence excitation spectroscopy ({mu}PLE). One of the main difficulties using {mu}PLE to probe single QDs is the unambiguous assignment of the observed resonances in the spectrum to specific transitions. By comparing micro photoluminescence ({mu}PL) and {mu}PLE spectra, the identification of the main resonances becomes possible. The key is given by the fine structure of the hot trion. Excitation spectroscopy on single charged QDs enables for the first time the complete observation of a non-trivial fine structure of an excitonic complex in a QD, the hot trion. Modelling based on eight-band k.p theory in combination with a configuration interaction scheme is in excellent agreement. Therewith the simulation also enables realistic predictions on the fine structure of the ground-state exciton which is of large importance for single quantum dot devices. Theory concludes from the observed transitions that the structural symmetry of the QDs is broken. Micro photoluminescence excitation spectroscopy combined with resonantly excited micro photoluminescence enables an optical access to the single particle states of the hole without the influence of few-particle coulomb interactions. Based on this knowledge the exciton

  11. Influence of the solvent environments on the spectral features of CdSe quantum dots with and without ZnS shell

    Energy Technology Data Exchange (ETDEWEB)

    Ibnaouf, K.H., E-mail: kheo90@gmail.com [Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Physics Department, College of Science, P.O. Box 90905, Riyadh 11623 (Saudi Arabia); Prasad, Saradh; Al Salhi, M.S.; Hamdan, A. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Research Chair for Laser Diagnosis of Cancer, King Saud University (Saudi Arabia); Zaman, M.B. [CEREM, College of Engineering, King Saud University (Saudi Arabia); Advanced Medical Research Institute of Canada, Sudbury (Canada); El Mir, L. [Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Physics Department, College of Science, P.O. Box 90905, Riyadh 11623 (Saudi Arabia)

    2014-05-01

    The spectral properties of 5 nm size of bare CdSe and (CdSe)ZnS core–shell quantum dots (QDs) have been recorded and investigated under different solvent environments with different polarities and different concentrations. The results showed that the spectral profile of absorption did not change for both quantum dots in different solvents under a wide range of concentrations. On the other hand, the photoluminescence (PL) spectra of (CdSe)ZnS core–shell quantum dots in non-polar solvents showed two bands; the primary around 420 nm and the secondary around 620 nm. In contrast, the PL spectra of bare CdSe in non-polar solvents, showed a very strong band around 590 nm, with a total absence of the primary wavelength band at 420 nm. Under high polar solvent environments, bare CdSe showed a new peak around 420 nm, which was totally absent in non-polar solvent. Therefore, the solvent plays an important role in the PL spectra of bare CdSe and (CdSe)ZnS core–shell quantum dots.

  12. Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots

    International Nuclear Information System (INIS)

    Taliercio, T.; Valvin, P.; Intartaglia, R.; Guillet, T.; Lefebvre, P.; Bretagnon, T.; Gil, B.; Sallet, V.; Harmand, J.C.

    2005-01-01

    We present a study of the optical properties of quantum dots based on a new family of semiconductors: III-V dilute nitrides such as (In,Ga)(N,As). Continuous wave and time resolved photoluminescence (PL) experiments allowed us to evaluate the impact of N incorporation during the growth of InAs/GaAs quantum dots. Previous work [V. Sallet et al., to be submitted to J. Cryst. Growth (2005); O. Schumann et al., J. Appl. Phys. 96, 2832 (2004)] showed that increasing the flux of N atoms into the growth chamber modifies drastically the size of the dots which leads to a bimodal growth. Two populations of dots with different sizes appear. The quantum dot PL line broadens and a second PL line appears at higher energy. Time resolved PL allows us to identify the nature of this second PL line: second population of quantum dots. A second decay time is observed which we interpret as being the consequence of the perturbation of the electronic states of the quantum dots. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging.

    Science.gov (United States)

    Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

    2015-05-07

    Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.

  14. Studies on highly luminescent AgInS{sub 2} and Ag–Zn–In–S quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Weidong, E-mail: xiangweidong001@126.com [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); College of Materials Science and Engineering, Tongji University, Shanghai 201804 (China); Xie, Cuiping; Wang, Jing; Zhong, Jiasong; Liang, Xiaojuan; Yang, Hailong; Luo, Le [College of Materials Science and Engineering, Tongji University, Shanghai 201804 (China); Chen, Zhaoping [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China)

    2014-03-05

    Highlights: • The quantum yield of the obtained ternary AgInS{sub 2} QDs was up to 62% with the emission peak of 642 nm under the excitation of 460 nm. • Colorful luminescent Ag–Zn–In–S QDs were obtained by adding Zn salts directly as well as Ag and In precursors. • The obtained highly luminescent quantum dots showed promising applications in the white light emitting diodes (W-LED). • The electroluminescence (EL) of AgInS{sub 2} QDs was observed in QD-LED device. -- Abstract: Silver indium sulfide (AIS) quantum dots (QDs) with different Ag/In molar ratios were synthesized via a hot-injection method. Intense photoluminescence (PL) originating from the donor–acceptor pair recombination were observed for all the samples and the emission peak blue-shifted from 739 to 632 nm, being similar to the behavior of the absorption onset as the Ag/In ratios decreased. The highest PL quantum yield (QY) of the obtained ternary AIS QDs was ca. 62% with an optimum ratio of Ag/In = 1/4. Compared with AIS QDs, when Zn ions were introduced, the absorption spectra of the obtained quaternary Ag–Zn–In–S QDs were blue-shifted, and their emission peaks moved to higher energies accordingly, showing a tunable emission from red to green by altering the band gap energy. In order to further study the electroluminescence (EL) as well as looking forward to the applications in the optoelectronic devices of the obtained highly luminescent nanoparticles, the colloidal AIS QDs were deposited as thin films to the sandwich-like structured QD-LED. The experimental results showed that the obtained EL device exhibited EL emission originated from QDs thin films by adjusting the turn on voltage, which is for the first time to realize EL of AIS QDs in such QD-LED.

  15. Photoluminescent enhancement of CdSe/Cd(1-x) Zn(x)S quantum dots by hexadecylamine at room temperature.

    Science.gov (United States)

    Yang, Jie; Yang, Ping

    2012-09-01

    CdSe/Cd(1-x) Zn(x)S core/shell quantum dots (QDs) were fabricated in 1-octadecene via a two step synthesis. CdSe cores were first prepared using CdO, trioctylphosphine (TOP) selenium, and stearic acid. Subsquently, a Cd(1-x) Zn(x)S shell coating was carried out using zinc acetate dihydrate, cadmium acetate dihydrate, TOPS, and hexadecylamine (HDA) starting materials in the friendly organic system under relatively low temperature. The absorption and photoluminescence (PL) spectra have a significant red shift after the coverage of Cd(1-x)Zn(x)S shell on CdSe cores. The X-ray diffraction analysis of samples confirmed the formation of core/shell structure. The PL quantum yields (QYs) of CdSe/Cd(1-x)Zn(x)S QDs were improved gradually with time at room temperature. This is ascribed to the surface passivation of HDA to the QDs during store. This phenomenon was confirmed by the Fourier transform infrared spectrum of samples. Namely, HDA does not capped on the surface of as-prepared QDs, in which a low PL QYs was observed (less than 10%). Being storing for certain time, HDA attached to the surface of the QDs, in which the PL QYs increased (up to 31%) and the full width at half maximum of PL spectra decreased. Moreover, the fluorescence decay curve of the core/shell QDs is closer to a biexponential decay profile and has a longer average PL lifetime. The variation of average PL lifetime also indicated the influence of HDA during store.

  16. Positioning of self-assembled InAs quantum dots by focused ion beam implantation

    International Nuclear Information System (INIS)

    Mehta, M.

    2007-01-01

    Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 μm was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from positioned QDs confirm their good optical quality. (orig.)

  17. pH sensitive quantum dot-anthraquinone nanoconjugates

    Science.gov (United States)

    Ruedas-Rama, Maria Jose; Hall, Elizabeth A. H.

    2014-05-01

    Semiconductor quantum dots (QDs) have been shown to be highly sensitive to electron or charge transfer processes, which may alter their optical properties. This feature can be exploited for different sensing applications. Here, we demonstrate that QD-anthraquinone conjugates can function as electron transfer-based pH nanosensors. The attachment of the anthraquinones on the surface of QDs results in the reduction of electron hole recombination, and therefore a quenching of the photoluminescence intensity. For some anthraquinone derivatives tested, the quenching mechanism is simply caused by an electron transfer process from QDs to the anthraquinone, functioning as an electron acceptor. For others, electron transfer and energy transfer (FRET) processes were found. A detailed analysis of the quenching processes for CdSe/ZnS QD of two different sizes is presented. The photoluminescence quenching phenomenon of QDs is consistent with the pH sensitive anthraquinone redox chemistry. The resultant family of pH nanosensors shows pKa ranging ˜5-8, being ideal for applications of pH determination in physiological samples like blood or serum, for intracellular pH determination, and for more acidic cellular compartments such as endosomes and lysosomes. The nanosensors showed high selectivity towards many metal cations, including the most physiologically important cations which exist at high concentration in living cells. The reversibility of the proposed systems was also demonstrated. The nanosensors were applied in the determination of pH in samples mimicking the intracellular environment. Finally, the possibility of incorporating a reference QD to achieve quantitative ratiometric measurements was investigated.

  18. Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

    Science.gov (United States)

    Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

    2000-01-01

    The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

  19. High Quantum Yield Blue Emission from Lead-Free Inorganic Antimony Halide Perovskite Colloidal Quantum Dots.

    Science.gov (United States)

    Zhang, Jian; Yang, Ying; Deng, Hui; Farooq, Umar; Yang, Xiaokun; Khan, Jahangeer; Tang, Jiang; Song, Haisheng

    2017-09-26

    Colloidal quantum dots (QDs) of lead halide perovskite have recently received great attention owing to their remarkable performances in optoelectronic applications. However, their wide applications are hindered from toxic lead element, which is not environment- and consumer-friendly. Herein, we utilized heterovalent substitution of divalent lead (Pb 2+ ) with trivalent antimony (Sb 3+ ) to synthesize stable and brightly luminescent Cs 3 Sb 2 Br 9 QDs. The lead-free, full-inorganic QDs were fabricated by a modified ligand-assisted reprecipitation strategy. A photoluminescence quantum yield (PLQY) was determined to be 46% at 410 nm, which was superior to that of other reported halide perovskite QDs. The PL enhancement mechanism was unraveled by surface composition derived quantum-well band structure and their large exciton binding energy. The Br-rich surface and the observed 530 meV exciton binding energy were proposed to guarantee the efficient radiative recombination. In addition, we can also tune the inorganic perovskite QD (Cs 3 Sb 2 X 9 ) emission wavelength from 370 to 560 nm via anion exchange reactions. The developed full-inorganic lead-free Sb-perovskite QDs with high PLQY and stable emission promise great potential for efficient emission candidates.

  20. A high-throughput homogeneous immunoassay based on Förster resonance energy transfer between quantum dots and gold nanoparticles

    International Nuclear Information System (INIS)

    Qian, Jing; Wang, Chengquan; Pan, Xiaohu; Liu, Songqin

    2013-01-01

    Graphical abstract: A Förster resonance energy transfer system by using polyclonal goat anti-CEA antibody labeled luminescent CdTe quantum dots (QDs) as donor and monoclonal goat anti-CEA antibody labeled gold nanoparticles (AuNPs) as acceptor for sensitive detection of tumor marker was proposed. Highlights: ► A homogeneous immunosensing strategy based on FRET for detection of tumor marker was proposed. ► Close of QDs and AuNPs allow the occurrence of quenching the photoluminescence of nano-bio-probes. ► Signal quenching was monitored by a self-developed image analyzer. ► The fluorometric assay format is attractive for widespread carcinoma screening and even field use. -- Abstract: A novel homogeneous immunoassay based on Förster resonance energy transfer for sensitive detection of tumor, e.g., marker with carcinoembryonic antigen (CEA), was proposed. The assay was consisted of polyclonal goat anti-CEA antibody labeled luminescent CdTe quantum dots (QDs) as donor and monoclonal goat anti-CEA antibody labeled gold nanoparticles (AuNPs) as acceptor. In presence of CEA, the bio-affinity between antigen and antibody made the QDs and AuNPs close enough, thus the photoluminescence (PL) quenching of CdTe QDs occurred. The PL properties could be transformed into the fluorometric variation, corresponding to the target antigen concentration, and could be easily monitored and analyzed with the home-made image analysis software. The fluorometric results indicated a linear detection range of 1–110 ng mL −1 for CEA, with a detection limit of 0.3 ng mL −1 . The proposed assay configuration was attractive for carcinoma screening or single sample in point-of-care testing, and even field use. In spite of the limit of available model analyte, this approach could be easily extended to detection of a wide range of biomarkers

  1. A high-throughput homogeneous immunoassay based on Förster resonance energy transfer between quantum dots and gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Jing [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); School of Chemistry and Chemical Engineering, Jiangsu University, Zhengjiang 212013 (China); Wang, Chengquan [Changzhou College of Information Technology, Changzhou 213164 (China); Pan, Xiaohu [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Liu, Songqin, E-mail: liusq@seu.edu.cn [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China)

    2013-02-06

    Graphical abstract: A Förster resonance energy transfer system by using polyclonal goat anti-CEA antibody labeled luminescent CdTe quantum dots (QDs) as donor and monoclonal goat anti-CEA antibody labeled gold nanoparticles (AuNPs) as acceptor for sensitive detection of tumor marker was proposed. Highlights: ► A homogeneous immunosensing strategy based on FRET for detection of tumor marker was proposed. ► Close of QDs and AuNPs allow the occurrence of quenching the photoluminescence of nano-bio-probes. ► Signal quenching was monitored by a self-developed image analyzer. ► The fluorometric assay format is attractive for widespread carcinoma screening and even field use. -- Abstract: A novel homogeneous immunoassay based on Förster resonance energy transfer for sensitive detection of tumor, e.g., marker with carcinoembryonic antigen (CEA), was proposed. The assay was consisted of polyclonal goat anti-CEA antibody labeled luminescent CdTe quantum dots (QDs) as donor and monoclonal goat anti-CEA antibody labeled gold nanoparticles (AuNPs) as acceptor. In presence of CEA, the bio-affinity between antigen and antibody made the QDs and AuNPs close enough, thus the photoluminescence (PL) quenching of CdTe QDs occurred. The PL properties could be transformed into the fluorometric variation, corresponding to the target antigen concentration, and could be easily monitored and analyzed with the home-made image analysis software. The fluorometric results indicated a linear detection range of 1–110 ng mL{sup −1} for CEA, with a detection limit of 0.3 ng mL{sup −1}. The proposed assay configuration was attractive for carcinoma screening or single sample in point-of-care testing, and even field use. In spite of the limit of available model analyte, this approach could be easily extended to detection of a wide range of biomarkers.

  2. Record Charge Carrier Diffusion Length in Colloidal Quantum Dot Solids via Mutual Dot-To-Dot Surface Passivation.

    Science.gov (United States)

    Carey, Graham H; Levina, Larissa; Comin, Riccardo; Voznyy, Oleksandr; Sargent, Edward H

    2015-06-03

    Through a combination of chemical and mutual dot-to-dot surface passivation, high-quality colloidal quantum dot solids are fabricated. The joint passivation techniques lead to a record diffusion length for colloidal quantum dots of 230 ± 20 nm. The technique is applied to create thick photovoltaic devices that exhibit high current density without losing fill factor. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

    International Nuclear Information System (INIS)

    Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

    2012-01-01

    Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

  4. Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Rihani, J.; Sallet, V.; Yahyaoui, N.; Harmand, J.C.; Oueslati, M.; Chtourou, R.

    2009-01-01

    Self-assembled InAs quantum dots (QDs) on GaAs(0 0 1) substrate were grown by molecular beam epitaxy (MBE) at a growth temperature of 490 deg. C. Two different families of dots were observed in the atomic force microscopy (AFM) image and ambiguously identified in the photoluminescence (PL) spectra. Temperature-dependent PL study was carried out in the 8-270 K temperature range. The integrated-PL intensity behavior of the two QDs populations was fit with the help of a rate equations model. It is found that the evolutions of the integrated-PL intensity of the two QDs population were governed by two regimes. The first one occurs in the 8-210 K temperature range and reveals an unusual enhancement of the integrated-PL intensity of the larger QDs (LQDs) class. This was attributed to the carrier supplies from the smaller QDs (SQDs) class via the tunneling process. The second one occurs in the 210-270 K temperature range and shows a common quench of the PL signals of the two QDs families, reflecting the same thermal escape mechanism of carriers

  5. InAs/GaAs quantum dot structures emitting in the 1.55 μm band

    Czech Academy of Sciences Publication Activity Database

    Hazdra, P.; Oswald, Jiří; Komarnitskyy, V.; Kuldová, Karla; Hospodková, Alice; Vyskočil, Jan; Hulicius, Eduard; Pangrác, Jiří

    2009-01-01

    Roč. 6, č. 1 (2009), 012007/1-012007/4 ISSN 1757-8981 R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * InAs * GaAs * photoluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism

  6. Growth and characterization of InP/In{sub 0.48}Ga{sub 0.52}P quantum dots optimized for single-photon emission

    Energy Technology Data Exchange (ETDEWEB)

    Ugur, Asli

    2012-08-28

    In this work the growth of self-assembled InP/InGaP quantum dots, as well as their optical and structural properties are presented and discussed. The QDs were grown on In{sub 0.48}Ga{sub 0.52}P, lattice matched to GaAs. Self-assembled InP quantum dots are grown using gas-source molecular beam epitaxy over a wide range of InP deposition rates, using an ultra-low growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/μm{sup 2} is realized. The resulting isolated InP quantum dots are individually characterized without the need for lithographical patterning and masks on the substrate. Both excitonic and biexcitonic emissions are observed from single dots, appearing as doublets with a fine-structure splitting of 320 μeV. Hanbury Brown-Twiss correlation measurements for the excitonic emission under cw excitation show anti-bunching behavior with an autocorrelation value of g{sup (2)}(0)=0.2. This system is applicable as a single-photon source for applications such as quantum cryptography. The formation of well-ordered chains of InP quantum dots on GaAs (001) substrates by using self-organized In{sub 0.48}Ga{sub 0.52}P surface undulations as a template is also demonstrated. The ordering requires neither stacked layers of quantum dots nor substrate misorientation. The structures are investigated by polarization-dependent photoluminescence together with transmission electron microscopy. Luminescence from the In{sub 0.48}Ga{sub 0.52}P matrix is polarized in one crystallographic direction due to anisotropic strain arising from a lateral compositional modulation. The photoluminescence measurements show enhanced linear polarization in the alignment direction of quantum dots. A polarization degree of 66% is observed. The optical anisotropy is achieved with a straightforward heterostructure, requiring only a single layer of QDs.

  7. A General Solid-State Synthesis of Chemically-Doped Fluorescent Graphene Quantum Dots for Bioimaging and Optoelectronic Applications

    KAUST Repository

    Ma, Chong-Bo

    2015-05-05

    Graphene quantum dots (GQDs) have attracted increasing interest because of their excellent properties such as strong photoluminescence, excellent biocompatibility and low cost. Herein, we develop a general method for the synthesis of doped and undoped GQDs, which relies on direct carbonization of organic precursors at solid state.

  8. A General Solid-State Synthesis of Chemically-Doped Fluorescent Graphene Quantum Dots for Bioimaging and Optoelectronic Applications

    KAUST Repository

    Ma, Chong-Bo; Zhu, Zhentong; Wang, Hang-Xing; Huang, Xiao; Zhang, Xiao; Qi, Xiaoying; Zhang, Haoli; Zhu, Yihan; Deng, Xia; Peng, Yong; Han, Yu; Zhang, Hua

    2015-01-01

    Graphene quantum dots (GQDs) have attracted increasing interest because of their excellent properties such as strong photoluminescence, excellent biocompatibility and low cost. Herein, we develop a general method for the synthesis of doped and undoped GQDs, which relies on direct carbonization of organic precursors at solid state.

  9. Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2003-01-01

    The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction. (C) 2002 Elsevier Science B.V. All rights ...

  10. Highly stable CsPbBr3 quantum dots coated with alkyl phosphate for white light-emitting diodes.

    Science.gov (United States)

    Xuan, Tongtong; Yang, Xianfeng; Lou, Sunqi; Huang, Junjian; Liu, Yong; Yu, Jinbo; Li, Huili; Wong, Ka-Leung; Wang, Chengxin; Wang, Jing

    2017-10-19

    Inorganic halide perovskite quantum dots (QDs) suffer from problems related to poor water stability and poor thermal stability. Here we developed a simple strategy to synthesize alkyl phosphate (TDPA) coated CsPbBr 3 QDs by using 1-tetradecylphosphonic acid both as the ligand for the CsPbBr 3 QDs and as the precursor for the formation of alkyl phosphate. These QDs not only retain a high photoluminescence quantum yield (PLQY, 68%) and narrow band emission (FHWM ∼ 22 nm) but also exhibit high stability against water and heat. The relative PL intensity of the QDs was maintained at 75% or 59% after being dispersed in water for 5 h or heated to 375 K (100 °C), respectively. Finally, white light-emitting diodes (WLEDs) with a high luminous efficiency of 63 lm W -1 and a wide color gamut (122% of NTSC) were fabricated by using green-emitting CsPbBr 3 /TDPA QDs and red-emitting K 2 SiF 6 :Mn 4+ phosphors as color converters. The luminous efficiency of the WLEDs remained at 90% after working under a relative humidity (RH) of 60% for 15 h, thereby showing promise for use as backlight devices in LCDs.

  11. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  12. Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Zíková, Markéta; Pangrác, Jiří; Oswald, Jiří; Kuldová, Karla; Vyskočil, Jan; Hulicius, Eduard

    2013-01-01

    Roč. 370, MAY (2013), s. 303-306 ISSN 0022-0248 R&D Projects: GA ČR GAP102/10/1201 Institutional research plan: CEZ:AV0Z10100521 Keywords : band alignment * photoluminescence * strain reducing layer * quantum dot * MOVPE * InAs/GaAs Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.693, year: 2013

  13. Observations of Rabi oscillations in a non-polar InGaN quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Reid, Benjamin P. L., E-mail: benjamin.reid@physics.ox.ac.uk; Chan, Christopher C. S.; Taylor, Robert A. [Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Kocher, Claudius [Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Konstanz University, Konstanz (Germany); Zhu, Tongtong; Oehler, Fabrice; Emery, Robert; Oliver, Rachel A. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-06-30

    Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.

  14. Observations of Rabi oscillations in a non-polar InGaN quantum dot

    International Nuclear Information System (INIS)

    Reid, Benjamin P. L.; Chan, Christopher C. S.; Taylor, Robert A.; Kocher, Claudius; Zhu, Tongtong; Oehler, Fabrice; Emery, Robert; Oliver, Rachel A.

    2014-01-01

    Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.

  15. Designing artificial 2D crystals with site and size controlled quantum dots.

    Science.gov (United States)

    Xie, Xuejun; Kang, Jiahao; Cao, Wei; Chu, Jae Hwan; Gong, Yongji; Ajayan, Pulickel M; Banerjee, Kaustav

    2017-08-30

    Ordered arrays of quantum dots in two-dimensional (2D) materials would make promising optical materials, but their assembly could prove challenging. Here we demonstrate a scalable, site and size controlled fabrication of quantum dots in monolayer molybdenum disulfide (MoS 2 ), and quantum dot arrays with nanometer-scale spatial density by focused electron beam irradiation induced local 2H to 1T phase change in MoS 2 . By designing the quantum dots in a 2D superlattice, we show that new energy bands form where the new band gap can be controlled by the size and pitch of the quantum dots in the superlattice. The band gap can be tuned from 1.81 eV to 1.42 eV without loss of its photoluminescence performance, which provides new directions for fabricating lasers with designed wavelengths. Our work constitutes a photoresist-free, top-down method to create large-area quantum dot arrays with nanometer-scale spatial density that allow the quantum dots to interfere with each other and create artificial crystals. This technique opens up new pathways for fabricating light emitting devices with 2D materials at desired wavelengths. This demonstration can also enable the assembly of large scale quantum information systems and open up new avenues for the design of artificial 2D materials.

  16. Photo-physical properties enhancement of bare and core-shell quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Mumin, Md Abdul, E-mail: pcharpentier@eng.uwo.ca; Akhter, Kazi Farida, E-mail: pcharpentier@eng.uwo.ca; Charpentier, Paul A., E-mail: pcharpentier@eng.uwo.ca [Chemical and Biochemical Engineering, Western University, London Ontario (Canada)

    2014-03-31

    Semiconductor nanocrystals (NCs) (also known as quantum dots, QDs) have attracted immense attention for their size-tunable optical properties that makes them impressive candidates for solar cells, light emitting devices, lasers, as well as biomedical imaging. However monodispersity, high and consistent photoluminescence, photostability, and biocompatibility are still major challenges. This work focuses on optimizing the photophysical properties and biocompatibility of QDs by forming core-shell nanostructures and their encapsulation by a carrier. Highly luminescent CdS and CdS-ZnS core-shell QDs with 5 nm sizes were synthesized using a facile approach based on pyrolysis of the single molecule precursors. After capping the CdS QDs with a thin layer of ZnS to reduce toxicity, the photoluminescence and photostability of the core-shell QDs was significantly enhanced. To make both the bare and core/shell structure QDs more resistant against photochemical reactions, a mesoporous silica layer was grown on the QDs through a reverse microemulsion technique based on hydrophobic interaction. This encapsulation enhanced the quantum yield and photostability compared to the bare QDs by providing much stronger resistance to oxidation and Oswald ripening of QDs. Encapsulation also improved biocompatibility of QDs that was evaluated with human umbilical vein endothelial cell lines (HUVEC)

  17. Unravelling the size and temperature dependence of exciton lifetimes in colloidal ZnSe quantum dots

    NARCIS (Netherlands)

    Eilers, Joren; Van Hest, Jacobine; Meijerink, A; Donega, Celso De Mello

    2014-01-01

    We report on the temperature dependence of the band-edge photoluminescence decay of organically capped colloidal ZnSe quantum dots (QDs) in the size range from 4.0 to 7.5 nm. A similar trend is observed for all investigated sizes: the decay time is short (∼5 ns) above 20 K and increases sharply

  18. Characteristics and performance of the Sunna high dose dosemeter using green photoluminescence and UV absorption readout methods

    Energy Technology Data Exchange (ETDEWEB)

    Miller, S.D.; Murphy, M.K.; Tinker, M.R.; Kovacs, A.; McLaughlin, W

    2002-07-01

    Growth in the use of ionising radiation for medical sterilisation and the potential for wide-scale international food irradiation have created the need for robust, mass-producible, inexpensive, and highly accurate radiation dosemeters. The Sunna dosemeter, lithium fluoride injection-moulded in a polyethylene matrix, can be read out using either green photoluminescence or ultraviolet (UV) absorption. The Sunna dosemeter can be mass-produced inexpensively with high precision. Both the photoluminescent and the UV absorption reader are simple and inexpensive. Both methods of analysis display negligible humidity effects, minimal dose rate dependence, acceptable post-irradiation effects, and permit measurements with a precision of nearly 1% 1s. The UV method shows negligible irradiation temperature effects from -30 deg. C to +60 deg. C. The photoluminescence method shows negligible irradiation temperature effects above room temperature for sterilisation dose levels and above. The dosimetry characteristics of these two readout methods are presented along with performance data in commercial sterilisation facilities. (author)

  19. Many-body effects in the gain spectra of highly excited quantum-dot lasers

    International Nuclear Information System (INIS)

    Schneider, H. C.; Chow, W. W.; Koch, S. W.

    2001-01-01

    Optical gain spectra are computed for quantum dots under high excitation conditions, where there is a non-negligible two-dimensional carrier density surrounding the dots. Using a screened Hartree-Fock theory to describe the influence of the Coulomb interaction, we find different self-energy shifts for the dot and quantum-well transitions. Furthermore, in contrast to the result for quantum-well and bulk systems, the peak gain at the quantum-dot transition computed including Coulomb effects is reduced from its free carrier value

  20. Emulsion Synthesis of Size-Tunable CH3NH3PbBr3 Quantum Dots: An Alternative Route toward Efficient Light-Emitting Diodes.

    Science.gov (United States)

    Huang, Hailong; Zhao, Fangchao; Liu, Lige; Zhang, Feng; Wu, Xian-gang; Shi, Lijie; Zou, Bingsuo; Pei, Qibing; Zhong, Haizheng

    2015-12-30

    We report a facile nonaqueous emulsion synthesis of colloidal halide perovskite quantum dots by controlled addition of a demulsifier into an emulsion of precursors. The size of resulting CH3NH3PbBr3 quantum dots can be tuned from 2 to 8 nm by varying the amount of demulsifier. Moreover, this emulsion synthesis also allows the purification of these quantum dots by precipitation from the colloidal solution and obtains solid-state powder which can be redissolved for thin film coating and device fabrication. The photoluminescence quantum yields of the quantum dots is generally in the range of 80-92%, and can be well-preserved after purification (∼80%). Green light-emitting diodes fabricated comprising a spin-cast layer of the colloidal CH3NH3PbBr3 quantum dots exhibited maximum current efficiency of 4.5 cd/A, power efficiency of 3.5 lm/W, and external quantum efficiency of 1.1%. This provides an alternative route toward high efficient solution-processed perovskite-based light-emitting diodes. In addition, the emulsion synthesis is versatile and can be extended for the fabrication of inorganic halide perovskite colloidal CsPbBr3 nanocrystals.

  1. Quadra-quantum Dots and Related Patterns of Quantum Dot Molecules:

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2010-10-01

    Full Text Available Abstract Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called ‘‘Droplet Epitaxy” has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390°C with a droplet growth rate of 1ML/s. Arsenic flux (7–8×10-6Torr is then exposed for InGaAs crystallization at 200°C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or , which are preferable crystallographic directions of quantum dot alignment in general.

  2. Synchronous determination of mercury (II) and copper (II) based on quantum dots-multilayer film

    International Nuclear Information System (INIS)

    Ma Qiang; Ha Enna; Yang Fengping; Su Xingguang

    2011-01-01

    Graphical abstract: We developed a sensitive sensor for synchronous detection of Hg (II) and Cu (II) based on the quenchedand recovered PL intensity of QDs-multilayer films. Solutions containing Hg (II) or Cu (II) were used to quench the fluorescence of the QDs-multilayer films firstly. Then, glutathione (GSH) was used to remove Hg (II) or Cu (II) from the QDs-multilayer films due to stronger affinity of GSH-metal ions than that of QDs metal ions. Thus, the fluorescence of QDs-multilayer films was recovered. Highlights: → QDs-multilayer films were developed for synchronous detection of Hg (II) and Cu (II). → Hg (II) and Cu (II) could quench the photoluminescence of the QDs-multilayer films. → Glutathione was used to remove metal ions and recovery photoluminescence of QDs-multilayer films. - Abstract: A sensitive sensor for mercury (II) and copper (II) synchronous detection was established via the changed photoluminescence of CdTe quantum dots (QDs) multilayer films in this work. QDs were deposited on the quartz slides to form QDs-multilayer films by electrostatic interactions with poly(dimethyldiallyl ammonium chloride) (PDDA). Hg 2+ or Cu 2+ could quench the photoluminescence of the QDs-multilayer films, and glutathione (GSH) was used to remove Hg 2+ or Cu 2+ from QDs-multilayer films due to strong affinity of GSH-metal ions, which resulted in the recovered photoluminescence of QDs-multilayer films. There are good linear relationships between the metal ions concentration and the photoluminescence intensity of QDs in the quenched and recovered process. It was found that the Stern-Volmer constants for Hg 2+ are higher than that for Cu 2+ . Based on different quenching and recovery constant between Hg 2+ and Cu 2+ , the synchronous detection of Hg 2+ and Cu 2+ can be achieved. The linear ranges of this assay were obtained from 0.005 to 0.5 μM for Hg 2+ and from 0.01 to 1 μM for Cu 2+ , respectively. And the artificial water samples were determined by this

  3. Determination of band structure parameters and the quasi-particle gap of CdSe quantum dots by cyclic voltammetry.

    Science.gov (United States)

    Inamdar, Shaukatali N; Ingole, Pravin P; Haram, Santosh K

    2008-12-01

    Band structure parameters such as the conduction band edge, the valence band edge and the quasi-particle gap of diffusing CdSe quantum dots (Q-dots) of various sizes were determined using cyclic voltammetry. These parameters are strongly dependent on the size of the Q-dots. The results obtained from voltammetric measurements are compared to spectroscopic and theoretical data. The fit obtained to the reported calculations based on the semi-empirical pseudopotential method (SEPM)-especially in the strong size-confinement region, is the best reported so far, according to our knowledge. For the smallest CdSe Q-dots, the difference between the quasi-particle gap and the optical band gap gives the electron-hole Coulombic interaction energy (J(e1,h1)). Interband states seen in the photoluminescence spectra were verified with cyclic voltammetry measurements.

  4. Ratiometric two-photon excited photoluminescence of quantum dots triggered by near-infrared-light for real-time detection of nitric oxide release in situ

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Hui [Shandong Sino-Japanese Center for Collaborative Research of Carbon Nanomaterials, Collaborative Innovation Center for Marine Biomass Fiber Materials and Textiles, College of Chemistry and Chemical Engineering, Laboratory of Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Shandong 266071 (China); Gui, Rijun, E-mail: guirijun@qdu.edu.cn [Shandong Sino-Japanese Center for Collaborative Research of Carbon Nanomaterials, Collaborative Innovation Center for Marine Biomass Fiber Materials and Textiles, College of Chemistry and Chemical Engineering, Laboratory of Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Shandong 266071 (China); Sun, Jie; Wang, Yanfeng [Institute of Materia Medica, Shandong Academy of Medical Sciences, Jinan 250062 (China)

    2016-05-30

    Probe-donor integrated nanocomposites were developed from conjugating silica-coated Mn{sup 2+}:ZnS quantum dots (QDs) with MoS{sub 2} QDs and photosensitive nitric oxide (NO) donors (Fe{sub 4}S{sub 3}(NO){sub 7}{sup −}, RBS). Under excitation with near-infrared (NIR) light at 808 nm, the Mn{sup 2+}:ZnS@SiO{sub 2}/MoS{sub 2}-RBS nanocomposites showed the dual-emissive two-photon excited photoluminescence (TPEPL) that induced RBS photolysis to release NO in situ. NO caused TPEPL quenching of Mn{sup 2+}:ZnS QDs, but it produced almost no impact on the TPEPL of MoS{sub 2} QDs. Hence, the nanocomposites were developed as a novel QDs-based ratiometric TPEPL probe for real-time detection of NO release in situ. The ratiometric TPEPL intensity is nearly linear (R{sup 2} = 0.9901) with NO concentration in the range of 0.01∼0.8 μM, which corresponds to the range of NO release time (0∼15 min). The detection limit was calculated to be approximately 4 nM of NO. Experimental results confirmed that this novel ratiometric TPEPL probe possessed high selectivity and sensitivity for the detection of NO against potential competitors, and especially showed high detection performance for NIR-light triggered NO release in tumor intracellular microenvironments. These results would promote the development of versatile probe-donor integrated systems, also providing a facile and efficient strategy to real-time detect the highly controllable drug release in situ, especially in physiological microenvironments. - Highlights: • Mn{sup 2+}:ZnS@SiO{sub 2}/MoS{sub 2}-RBS nanocomposites were developed as a novel ratiometric two-photon excited fluorescence probe. • This probe could conduct real-time detection of nitric oxide release in situ. • High feasibility of this probe was confirmed in tumor intracellular microenvironments.

  5. A novel synthesis of magnetic and photoluminescent graphene quantum dots/MFe2O4 (M = Ni, Co) nanocomposites for catalytic application

    Science.gov (United States)

    Naghshbandi, Zhwan; Arsalani, Nasser; Zakerhamidi, Mohammad Sadegh; Geckeler, Kurt E.

    2018-06-01

    In recent year, the research is focused on the nanostructured catalyst with increase physiochemical properties. Herein, Different magnetic nanocomposites of graphene quantum dots (GQD) and MFe2O4 (M = Ni, Co) with intrinsic photoluminescent and ferromagnetic properties were synthesized by a convenient co-precipitation method. The structure, morphology, and properties of these nanocomposites as well as the catalytic activity of the nanocomposites for the reduction of p-nitrophenol were investigated. The catalytic activity was found to be in the order of NiFe2O4/GQD > CoFe2O4/GQD > NiFe2O4 > CoFe2O4. The sample NiFe2O4/GQD exhibited the best catalytic activity with an apparent rate constant of 3.56 min-1 and a reduction completion time to p-aminophenol of 60 s. The catalysts can be reused by a magnetic field and display good stability, which can be recycled for six successive experiment with a conversion percentage of more than 95%. These results demonstrate that the nanocomposite NiFe2O4/GQD is an efficient catalyst for the reduction of p-nitrophenol compound. Also, the new nanocomposites have shown a significant reduction in the direct and indirect energy bandgaps when compared to pure GQD and the corresponding magnetic metal oxides.

  6. Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

    International Nuclear Information System (INIS)

    Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

    2008-01-01

    The present study compares structural and optical modifications of bare and silica (SiO 2 ) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni 12+ ion beam with fluences 10 12 to 10 13 ions/cm 2 . Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one

  7. Defect induced photoluminescence in MoS2 quantum dots and effect of Eu3+/Tb3+ co-doping towards efficient white light emission

    Science.gov (United States)

    Haldar, Dhrubaa; Ghosh, Arnab; Bose, Saptasree; Mondal, Supriya; Ghorai, Uttam Kumar; Saha, Shyamal K.

    2018-05-01

    Intensive research has been carried out on optical properties of MoS2 quantum dots for versatile applications in photo catalytic, sensing and optoelectronic devices. However, white light generation from MoS2 quantum dots particularly using doping effect is relatively unexplored. Herein we report successful synthesis of Europium (Eu)/Terbium (Tb) co-doped MoS2 quantum dots to achieve white light for potential applications in optoelectronic devices. The dopant ions are introduced into the host lattice to retain the emission colors to cover the entire range of visible light of solar spectrum. Perfect white light (CIE = 0.31, 0.33) with high intensity (quantum yield = 28.29%) is achieved in these rare earth elements co-doped quantum dot system. A new peak is observed in the NIR region which is attributed to the defects present in MoS2 quantum dots. Temperature dependent study has been carried out to understand the origin of this new peak in the NIR region. It is seen that the 'S' defects in the QDs cause the appearance of this peak which shows a blue shift at higher temperature.

  8. Photoelectronic characterization of IgG antibody molecule-quantum dot hybrid as biosensing probe

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hye-Weon; Kim, Sung-Jo; Kim, In S [School of Environmental Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Lee, Jinwook; Kim, Sungyoun, E-mail: iskim@gist.ac.kr [Center for Seawater Desalination Plant, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of)

    2010-10-22

    Quantum dot (QD)-based biomolecule hybrids have recently attracted much attention in specifically identifying and labeling target proteins. In this study, QD encapsulated with immunoglobulin antibodies, as a labeling building block in biosensors, was investigated to clarify the most efficient configuration and photoluminescence behavior. Both the biological recognition capacity and photoluminescence emitting signal of the antibody-coupled nanocrystal were validated through a photoelectrical characterization procedure. Derivation of the optimum number of antibody molecules to be packed onto the QD surface yielded the highest binding capacity for the target antigen. During formation of the bioactive layer, the intrinsic photoluminescence response of the QDs significantly decreased due to photoinduced hole transfer according to their rearranged electronic structure. The thorough study of this assembly provides a validation approach for the careful titration of biosensor probes for optimal reaction kinetics. Furthermore, it contributes to the development of an effective tool for the application and interpretation of QD-based labeling techniques.

  9. Photoelectronic characterization of IgG antibody molecule-quantum dot hybrid as biosensing probe

    International Nuclear Information System (INIS)

    Yu, Hye-Weon; Kim, Sung-Jo; Kim, In S; Lee, Jinwook; Kim, Sungyoun

    2010-01-01

    Quantum dot (QD)-based biomolecule hybrids have recently attracted much attention in specifically identifying and labeling target proteins. In this study, QD encapsulated with immunoglobulin antibodies, as a labeling building block in biosensors, was investigated to clarify the most efficient configuration and photoluminescence behavior. Both the biological recognition capacity and photoluminescence emitting signal of the antibody-coupled nanocrystal were validated through a photoelectrical characterization procedure. Derivation of the optimum number of antibody molecules to be packed onto the QD surface yielded the highest binding capacity for the target antigen. During formation of the bioactive layer, the intrinsic photoluminescence response of the QDs significantly decreased due to photoinduced hole transfer according to their rearranged electronic structure. The thorough study of this assembly provides a validation approach for the careful titration of biosensor probes for optimal reaction kinetics. Furthermore, it contributes to the development of an effective tool for the application and interpretation of QD-based labeling techniques.

  10. Quantum dots, advantages and drawbacks for lighting applications

    International Nuclear Information System (INIS)

    Schmidmayr, D.; Zehetner, J.

    2014-01-01

    At present 19% of the world-wide consumed electricity is used for lighting purposes. Compared e.g. to the well-known incandescent light bulb a modern warm white LED with a similar light quality has a 25 times higher lifetime and operates approximately ten times more efficient. One major component limiting the efficiency is the color conversion material (phosphor). Due to broad emission bandwidths of traditional phosphors energy is wasted. In order to further improve efficiency new robust fluorescent materials which allow selective, narrow band conversion are needed. In this paper we investigate the potential of quantum dots and show that they are able to increase both luminous flux and spectral coverage at the same time. Furthermore we evaluate the optical properties of quantum dot samples under thermal stress and aerial oxygen influence. Photoluminescence intensity degradation as well as a shift of the emission peak wavelength still pose a problem. (authors)

  11. Electron Spin Optical Orientation in Charged Quantum Dots

    Science.gov (United States)

    Shabaev, A.; Gershoni, D.; Korenev, V. L.

    2005-03-01

    We present a theory of nonresonant optical orientation of electron spins localized in quantum dots. This theory explains the negative circularly polarized photoluminescence of singlet trions localized in quantum dots previously observed in experiments where trion polarization changed to negative with time and where the degree of the negative polarization increased with intensity of pumping light. We have shown that this effect can be explained by the accumulation of dark excitons that occurs due to the spin blocking of the singlet trion formation - the major mechanism of dark exciton recombination. The accumulation of dark excitons results from a lack of electrons with a spin matching the exciton polarization. The electron spin lifetime is shortened by a transverse magnetic field or a temperature increase. This takes the block off the dark exciton recombination and restores the positive degree of trion polarization. The presented theory gives good agreement with experimental data.

  12. Protease-activated quantum dot probes

    International Nuclear Information System (INIS)

    Chang, Emmanuel; Miller, Jordan S.; Sun, Jiantang; Yu, William W.; Colvin, Vicki L.; Drezek, Rebekah; West, Jennifer L.

    2005-01-01

    We have developed a novel nanoparticulate luminescent probe with inherent signal amplification upon interaction with a targeted proteolytic enzyme. This construct may be useful for imaging in cancer detection and diagnosis. In this system, quantum dots (QDs) are bound to gold nanoparticles (AuNPs) via a proteolytically degradable peptide sequence to non-radiatively suppress luminescence. A 71% reduction in luminescence was achieved with conjugation of AuNPs to QDs. Release of AuNPs by peptide cleavage restores radiative QD photoluminescence. Initial studies observed a 52% rise in luminescence over 47 h of exposure to 0.2 mg/mL collagenase. These probes can be customized for targeted degradation simply by changing the sequence of the peptide linker

  13. Optimization of digital image processing to determine quantum dots' height and density from atomic force microscopy.

    Science.gov (United States)

    Ruiz, J E; Paciornik, S; Pinto, L D; Ptak, F; Pires, M P; Souza, P L

    2018-01-01

    An optimized method of digital image processing to interpret quantum dots' height measurements obtained by atomic force microscopy is presented. The method was developed by combining well-known digital image processing techniques and particle recognition algorithms. The properties of quantum dot structures strongly depend on dots' height, among other features. Determination of their height is sensitive to small variations in their digital image processing parameters, which can generate misleading results. Comparing the results obtained with two image processing techniques - a conventional method and the new method proposed herein - with the data obtained by determining the height of quantum dots one by one within a fixed area, showed that the optimized method leads to more accurate results. Moreover, the log-normal distribution, which is often used to represent natural processes, shows a better fit to the quantum dots' height histogram obtained with the proposed method. Finally, the quantum dots' height obtained were used to calculate the predicted photoluminescence peak energies which were compared with the experimental data. Again, a better match was observed when using the proposed method to evaluate the quantum dots' height. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. White light emission from organic-inorganic hererostructure devices by using CdSe quantum dots as emitting layer

    International Nuclear Information System (INIS)

    Tang Aiwei; Teng Feng; Gao Yinhao; Li Dan; Zhao Suling; Liang Chunjun; Wang Yongsheng

    2007-01-01

    In this paper, white light emission was obtained from organic-inorganic heterostructure devices by using CdSe quantum dots as emitting layer, in which CdSe quantum dots were synthesized via a colloidal chemical approach by using CdO and Se powder as precursors. Photoluminescence of CdSe quantum dots demonstrated a white emission with a full wavelength at half maximum (FWHM) of about 200 nm under ambient conditions, and the white emission could be observed in both multilayer device ITO/PEDOT:PSS/CdSe/BCP/Alq 3 /Al and single-layer device: ITO/PEDOT:PSS/CdSe/Al. The broad emission was attributed to the inhomogeneous broadening. The CIE coordinates of the multilayer device were x=0.35 and y=0.40. The white-light-emitting diodes with CdSe quantum dots as the emitting layer are potentially useful in lighting applications

  15. Quadra-Quantum Dots and Related Patterns of Quantum Dot Molecules: Basic Nanostructures for Quantum Dot Cellular Automata Application

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2010-10-01

    Full Text Available Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called 'Droplet Epitaxy' has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390'C with a droplet growth rate of 1ML/s. Arsenic flux (7'8'10-6Torr is then exposed for InGaAs crystallization at 200'C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or, which are preferable crystallographic directions of quantum dot alignment in general.

  16. Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Godefroo, S.; Maes, J.; Hayne, M.; Moshchalkov, V.V.; Henini, M.; Pulizzi, F.; Patane, A.; Eaves, L.

    2004-01-01

    We have used photoluminescence in pulsed (≤50 T) and dc (≤12 T) magnetic fields to investigate the influence of substrate orientation and growth interruption (GI) on the electronic properties of InAs/GaAs quantum dots, grown by molecular beam epitaxy at 480 deg. C. Dot formation is very efficient on the (100) substrate: electronic confinement is already strong without GI and no significant change in confinement is observed with GI. On the contrary, for the (311)B substrate strong confinement of the charges only occurs after a GI is introduced. When longer GIs are applied the dots become higher

  17. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  18. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Saharoui; Mughal, Asad Jahangir

    2015-01-01

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  19. Nonlinear Dot Plots.

    Science.gov (United States)

    Rodrigues, Nils; Weiskopf, Daniel

    2018-01-01

    Conventional dot plots use a constant dot size and are typically applied to show the frequency distribution of small data sets. Unfortunately, they are not designed for a high dynamic range of frequencies. We address this problem by introducing nonlinear dot plots. Adopting the idea of nonlinear scaling from logarithmic bar charts, our plots allow for dots of varying size so that columns with a large number of samples are reduced in height. For the construction of these diagrams, we introduce an efficient two-way sweep algorithm that leads to a dense and symmetrical layout. We compensate aliasing artifacts at high dot densities by a specifically designed low-pass filtering method. Examples of nonlinear dot plots are compared to conventional dot plots as well as linear and logarithmic histograms. Finally, we include feedback from an expert review.

  20. Nonlinear Absorptions of CdSeTe Quantum Dots under Ultrafast Laser Radiation

    Directory of Open Access Journals (Sweden)

    Zhijun Chai

    2016-01-01

    Full Text Available The oil-soluble alloyed CdSeTe quantum dots (QDs are prepared by the electrostatic method. The basic properties of synthesized CdSeTe QDs are characterized by UV-Vis absorption spectroscopy, photoluminescence spectroscopy, inductively coupled plasma mass spectrometry, and transmission electron microscope. The off-resonant nonlinear optical properties of CdSeTe QDs are studied by femtosecond Z-scan at 1 kHz (low-repetition rate and 84 MHz (high-repetition rate. Nonlinear absorption coefficients are calculated under different femtosecond laser excitations. Due to the long luminescent lifetime of CdSeTe QDs, under the conditions of high-repetition rate, for open-aperture curve, heat accumulation and bleaching of ground state are responsible for the decrease of two-photon absorption (TPA coefficient.

  1. Fluorescent porous silicon biological probes with high quantum efficiency and stability.

    Science.gov (United States)

    Tu, Chang-Ching; Chou, Ying-Nien; Hung, Hsiang-Chieh; Wu, Jingda; Jiang, Shaoyi; Lin, Lih Y

    2014-12-01

    We demonstrate porous silicon biological probes as a stable and non-toxic alternative to organic dyes or cadmium-containing quantum dots for imaging and sensing applications. The fluorescent silicon quantum dots which are embedded on the porous silicon surface are passivated with carboxyl-terminated ligands through stable Si-C covalent bonds. The porous silicon bio-probes have shown photoluminescence quantum yield around 50% under near-UV excitation, with high photochemical and thermal stability. The bio-probes can be efficiently conjugated with antibodies, which is confirmed by a standard enzyme-linked immunosorbent assay (ELISA) method.

  2. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Banavoth, Murali; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan; AlYami, Noktan; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N.; Mohammed, Omar F.; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman

    2016-01-01

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  3. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun

    2016-08-16

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  4. Nearly suppressed photoluminescence blinking of small-sized, blue-green-orange-red emitting single CdSe-based core/gradient alloy shell/shell quantum dots: correlation between truncation time and photoluminescence quantum yield.

    Science.gov (United States)

    Roy, Debjit; Mandal, Saptarshi; De, Chayan K; Kumar, Kaushalendra; Mandal, Prasun K

    2018-04-18

    CdSe-based core/gradient alloy shell/shell semiconductor quantum dots (CGASS QDs) have been shown to be optically quite superior compared to core-shell QDs. However, very little is known about CGASS QDs at the single particle level. Photoluminescence blinking dynamics of four differently emitting (blue (λem = 510), green (λem = 532), orange (λem = 591), and red (λem = 619)) single CGASS QDs having average sizes 600 nm). In this manuscript, we report nearly suppressed PL blinking behaviour of CGASS QDs with average sizes correlation between the event durations and found that residual memory exists in both the ON- and OFF-event durations. Positively correlated successive ON-ON and OFF-OFF event durations and negatively correlated (anti-correlated) ON-OFF event durations perhaps suggest the involvement of more than one type of trapping process within the blinking framework. The timescale corresponding to the additional exponential term has been assigned to hole trapping for ON-event duration statistics. Similarly, for OFF-event duration statistics, this component suggests hole detrapping. We found that the average duration of the exponential process for the ON-event durations is an order of magnitude higher than that of the OFF-event durations. This indicates that the holes are trapped for a significantly long time. When electron trapping is followed by such a hole trapping, long ON-event durations result. We have observed long ON-event durations, as high as 50 s. The competing charge tunnelling model has been used to account for the observed blinking behaviour in these CGASS QDs. Quite interestingly, the PLQY of all of these differently emitting QDs (an ensemble level property) could be correlated with the truncation time (a property at the single particle level). A respective concomitant increase-decrease of ON-OFF event truncation times with increasing PLQY is also indicative of a varying degree of suppression of the Auger recombination processes in these four

  5. Micro-Raman and micro-photoluminescence study of bio-conjugated core–shell CdSe/ZnS nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics of NASU, pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Kolomys, O.; Strelchuk, V. [V. Lashkaryov Institute of Semiconductor Physics of NASU, pr. Nauky 41, 03028 Kyiv (Ukraine); Rachkov, O. [The Institute of Molecular Biology and Genetics of NASU, Zabolotnogo Str. 150, 03680 Kyiv (Ukraine); Kryvko, A. [Instituto Politécnico Nacional – ESIME, Av. IPN, Ed. Z4, U.P.A.L.M., 07738 Mexico D.F. (Mexico)

    2014-11-15

    The micro-Raman and micro-photoluminescence spectra of non-conjugated and conjugated with antibody against S6K2 commercial CdSe/ZnS quantum dots (QDs) were investigated under different excitation wavelengths and at different temperatures. In the photoluminescence (PL) spectra, the additional PL band shifted on 0.6–0.65 eV to higher energies from the CdSe/ZnS QD exciton PL band is revealed. The relative intensity of this band is found to be several times larger in bio-conjugated QDs, than in the non-conjugated ones. The characteristics of both PL bands (the PL intensity, spectral position and half-width of the PL band) vary similarly under continuous laser light irradiation, storage of the QD samples in the atmospheric ambience as well as during the temperature change. In the Raman spectra recorded under excitation resonant with the high-energy PL band, the additional Raman peaks at about 300 cm{sup −1} and 600 cm{sup −1}, which are close to the frequency of LO and 2LO phonons of bulk CdS, are found. It is proposed that alloyed QDs with chemical composition close to CdS are responsible for the additional high-energy PL band. The possible reasons for the formation of the alloyed QDs are discussed.

  6. Non-Enzymatic-Browning-Reaction: A Versatile Route for Production of Nitrogen-Doped Carbon Dots with Tunable Multicolor Luminescent Display

    Science.gov (United States)

    Wei, Weili; Xu, Can; Wu, Li; Wang, Jiasi; Ren, Jinsong; Qu, Xiaogang

    2014-01-01

    The non-enzymatic browning, namely Maillard reaction is commonly invoked to account for abiotic chemical transformations of organic matter. Here we report a new reaction pathway via the Maillard reaction to systematically synthesize a series of nitrogen-doped carbon dots (C-dots) with superhigh quantum yield (QY) and tunable multicolor luminescent displayment. The starting materials are glucose and the serial amino acid analogues which allow systemically controlling luminescent and physicochemical properties of C-dots at will. Unexpectedly, the as-prepared C-dots possess bright photoluminescence with QY up to 69.1% which is almost the highest ever reported, favorable biocompatibility, excellent aqueous and nonaqueous dispersibility, ultrahigh photostability, and readily functionalization. We have demonstrated that they are particularly suitable for multicolor luminescent display and long-term and real-time cellular imaging. Furthermore, the methodology is readily scalable to large yield, and can provide sufficient amount of C-dots for practical demands.

  7. Optical techniques for probing the excited state dynamics of quantum dot solids

    Energy Technology Data Exchange (ETDEWEB)

    Moroz, P.; Kholmicheva, N.; Razgoniaeva, N. [Center for Photochemical Sciences, Bowling Green State University, Bowling Green, OH 43402 (United States); Department of Physics, Bowling Green State University, Bowling Green, OH 43402 (United States); Burchfield, D. [Department of Chemistry, Bowling Green State University, Bowling Green, OH 43402 (United States); Sharma, N.; Acharya, A. [Department of Physics, Bowling Green State University, Bowling Green, OH 43402 (United States); Zamkov, M., E-mail: zamkovm@bgsu.edu [Center for Photochemical Sciences, Bowling Green State University, Bowling Green, OH 43402 (United States); Department of Physics, Bowling Green State University, Bowling Green, OH 43402 (United States)

    2016-06-01

    Highlights: • Optical techniques represent a powerful tool for probing exciton diffusion in QD solids. • Exciton dissociation in QD solids is caused by charge tunneling to traps and other dots. • Exciton and free-carrier lifetimes are given by fast and slow components of PL decay. • Surface PL offers valuable information on the type and density of traps in QD solids. - Abstract: Quantum dot (QD) solids represent an important class of functional materials that holds strong promise for future applications in technology. Their optoelectronic properties are determined by energy diffusion processes, which character can often be inferred from the temporal and spectral analysis of the film’s photoluminescence (PL). Here, optical techniques based on PL lifetime, bulk quenching, and temperature-dependent PL will be discussed. These techniques complement the electrical conductivity measurements by mapping the flow of optically induced excitons through undepleted, contact-free films with an unprecedented temporal and spatial resolution. By correlating the QD solid morphology with the ensuing photoluminescence (PL) dynamics, these methods allow estimating important transport characteristics, including exciton and charge carrier diffusion lengths, the rate of interparticle energy transfer, carrier mobility, and the exciton diffusivity. The review will cover most popular PL-based strategies and summarize the key experimental findings resulting from these works.

  8. Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

    Energy Technology Data Exchange (ETDEWEB)

    Laucht, Arne; Villas-Boas, Jose M.; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

    2010-07-01

    We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nanocavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nanocavity mode. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced.

  9. Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

    Energy Technology Data Exchange (ETDEWEB)

    Villas-Boas, Jose M. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica; Laucht, Arne; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Technische Universitaet Muenchen, Garching (Germany). Walter Schottky Inst.

    2011-07-01

    Full text. We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nano cavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nano cavity mode. Photoluminescence measurements show a characteristic triple peak during the double anti crossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced

  10. A review on syntheses, properties, characterization and bioanalytical applications of fluorescent carbon dots

    International Nuclear Information System (INIS)

    Zuo, Pengli; Lu, Xiuhua; Sun, Zhigang; Guo, Yuhan; He, Hua

    2016-01-01

    Carbon dots (C-dots) are a kind of fluorescent nanoparticles that are strongly fluorescent, non-blinking, and can be easily synthesized at low cost. Their emission color can be tuned by varying the excitation wavelength. Their properties make them strong competitors to semiconductor quantum dots. Synthetic approaches for C-dots can be classified into two categories, viz. top-down and bottom-up methods. Surface passivated and functionalized C-dots can be utilized to sense pH values, metal ions and organic molecules. Owing to their low cytotoxicity, biocompatibility and impressive photostability, long-term observations become possible. C-dots also show promise as labels and for bioimaging. This review (with 142 refs.) is divided into several sections. The first covers commonly used methods for preparation of C-dots including laser ablation, arc discharge, electrochemical methods, pyrolytic processes, template based methods, microwave assisted methods, chemical oxidation methods, reverse micelle based methods, etc. The first section also covers methods for surface functionalization and passivation. We continue by discussing the spectroscopic properties and other physical and chemical properties of C-dots (fluorescence, up-conversion fluorescence, methods for enhancing photoluminescence, effects of pH value, cytotoxicity, etc.). Another section covers the characterization including TEM and XRD. Applications in biology are summarized and subdivided into in vitro imaging, in vivo imaging, chemical probe, quantitation of biomacromolecules, but also in drug delivery, photoacoustic imaging and anticancer therapy. We finally discuss current challenges and perspectives in this promising field. (author)

  11. Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, Andrea; Borri, Paola; Langbein, Wolfgang

    2000-01-01

    The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 ìm is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature....

  12. Growth and optical properties of CdTe quantum dots in ZnTe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

    2011-09-12

    We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

  13. Linearly polarized emission from an embedded quantum dot using nanowire morphology control.

    Science.gov (United States)

    Foster, Andrew P; Bradley, John P; Gardner, Kirsty; Krysa, Andrey B; Royall, Ben; Skolnick, Maurice S; Wilson, Luke R

    2015-03-11

    GaAs nanowires with elongated cross sections are formed using a catalyst-free growth technique. This is achieved by patterning elongated nanoscale openings within a silicon dioxide growth mask on a (111)B GaAs substrate. It is observed that MOVPE-grown vertical nanowires with cross section elongated in the [21̅1̅] and [1̅12] directions remain faithful to the geometry of the openings. An InGaAs quantum dot with weak radial confinement is realized within each nanowire by briefly introducing indium into the reactor during nanowire growth. Photoluminescence emission from an embedded nanowire quantum dot is strongly linearly polarized (typically >90%) with the polarization direction coincident with the axis of elongation. Linearly polarized PL emission is a result of embedding the quantum dot in an anisotropic nanowire structure that supports a single strongly confined, linearly polarized optical mode. This research provides a route to the bottom-up growth of linearly polarized single photon sources of interest for quantum information applications.

  14. Observation of single quantum dots in GaAs/AlAs micropillar cavities

    Energy Technology Data Exchange (ETDEWEB)

    Burger, Philipp; Karl, Matthias; Hu, Dongzhi; Schaadt, Daniel M.; Kalt, Heinz; Hetterich, Michael [Institut fuer Angewandte Physik, Universitaet Karlsruhe (Germany); DFG Center for Functional Nanostructures (CFN), Karlsruhe (Germany)

    2009-07-01

    In our contribution we present the fabrication steps of micropillar cavities and their optical properties. The layer structure consisting of a GaAs-based lambda-cavity sandwiched between two GaAs/AlAs distributed Bragg reflectors is grown by molecular-beam epitaxy. In(Ga)As quantum dots, emitting at around 950 nm, are embedded as optically active medium in the middle of the cavity. The pillars are milled out of this structure with a focused ion-beam. A confocal micro-photoluminescence set-up allows to measure optical cavity modes as well as single quantum dots in the pillars when using low excitation intensity. This enables us to observe a (thermal) shift of the single quantum dot peaks relative to the cavity mode. In addition, we increased the numerical aperture of the set-up (originally 0.4) with a solid immersion lens up to 0.8. Thus we are able to detect the fundamental mode of pillars with very small diameters. Furthermore, the collection efficiency increases substantially.

  15. Novel Synthesis of Slightly Fluorinated Graphene Quantum Dots with Luminescent and Paramagnetic Properties through Thermal Cutting of Fluorinated Graphene

    Science.gov (United States)

    Feng, Qian; Xiao, Wenqing; Zheng, Yongping; Lin, Yuda; Li, Jiaxin; Ye, Qingying; Huang, Zhigao

    2018-01-01

    A novel approach has been developed to synthesize slightly fluorinated graphene quantum dots (GQDs-F) through thermal cutting of highly fluorinated graphene. The fluorinated graphene with substantial structure defects is fragile and is readily attacked. The direct evaporation of abundant CFn (n = 2, 3) groups near structure defects lead to the loss of adjacent skelton C atoms, and the fluorinated graphene can be thermally cut into GQDs-F with a relatively uniform nanosize in pyrolysis at 810 K. The GQDs-F with a low F/C atomic ratio of ca. 0.03 exhibit excitation wavelength-dependent properties with multicolor photoluminescence (PL) from blue to green. At the same time, F adatoms that are most likely located at the edges of GQDs-F have a high efficiency of introducing paramagnetic centres, and GQDs-F show a strong paramagnetism because of sp3-type defects and magnetic zigzag edges. The graphene quantum dots with such multimodal capabilities should have great applied value in material science. PMID:29316730

  16. Investigation of the optical characteristics of a combination of InP/ZnS-quantum dots with MWCNTs in a PMMA matrix

    Science.gov (United States)

    Landi, G.; Henninger, M.; De Girolamo del Mauro, A.; Borriello, C.; Di Luccio, T.; Neitzert, H. C.

    2013-10-01

    In the present study we investigated a combination of quantum dots with multi-walled carbon nanotubes as a possible future additive to the active layer of polymer solar cells. In this case the quantum dots should serve to enhance the long wavelength response of the solar cell, while the nanotubes enhance the charge carrier collection efficiency by favoring charge carrier separation and enhancement of the lateral conduction of the films. In order to clarify the interplay of the nanoparticles only, we deposited them into a non-conducting and transparent polymethyl-methalacrylate (PMMA) matrix. InP/ZnS quantum dots with an emission peak wavelength of 660 nm have been chosen in this study, because their addition can enhance the long wavelength response of conventional poly(3-hexylthiophene) (P3HT): phenyl-C61-butyric acid methyl ester (PCBM) bulk heterostructure polymer solar cells. In our study we kept the quantum dot concentration constant and varied the concentration of the carbon nanotubes (CNTs) in the deposited films. The characterization of the film morphology by scanning electron microscopy (SEM) imaging and of the optical properties by photoluminescence and transmittance revealed a rather complex interplay between nanotubes and quantum dots. In particular we found a strong quenching of the photoluminescence and an inhomogeneous CNT distribution for carbon nanotube concentrations exceeding 1%. The decrease in optical transmittance of the films with increasing CNT concentration is less pronounced, when quantum dots (QDs) are added. The optical transmittance in a wavelength range between 380 nm and 800 nm of the composites could be expressed empirically as a simple second order polynomial function.

  17. Synthesis of highly fluorescent hydrophobic carbon dots by hot injection method using Paraplast as precursor

    International Nuclear Information System (INIS)

    Talib, Abou; Pandey, Sunil; Thakur, Mukeshchand; Wu, Hui-Fen

    2015-01-01

    We have reported synthesis of bright blue colored hydrophobic carbon dots (hC-dots) using highly pure blend of polymers called Paraplast. We developed a hot injection method for making nearly monodispersed hC-dots with a diameter in a range: 5–30 nm as confirmed by high resolution transmission electron microscopy (HRTEM). The involvement of various functional groups was confirmed by Fourier transform infra-red (FTIR) spectroscopy. These hC-dots were incubated with breast cancer stem cells in order to check the entry as well as biological imaging. The cells were analyzed using epifluorescent microscopy. hC-dots showed concentration dependent cytotoxicity (LD 50 : 50 mg/ml) and could be used for bioimaging even at lower concentration (0.5 mg/ml). hC-dots were found to be versatile agents for peeping inside the cells which could also be used for delivery of water insoluble chemotherapeutic agents to variety of solid tumors. - Highlights: • Synthesis of hydrophobic carbon dots from polymer based Paraplast • Deep blue color under the influence of UV light • Typical optical properties used for biological imaging • Biological imaging of breast cancer stem cells revealing potential of carbon dots

  18. Synthesis of highly fluorescent hydrophobic carbon dots by hot injection method using Paraplast as precursor

    Energy Technology Data Exchange (ETDEWEB)

    Talib, Abou [Doctoral Degree Program in Marine Biotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Pandey, Sunil [Department of Chemistry, National Sun Yat-Sen University, 70, Lien-Hai Road, Kaohsiung 80424, Taiwan (China); Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70, Lien-Hai Road, Kaohsiung 80424, Taiwan (China); Thakur, Mukeshchand [Department of Chemistry, National Sun Yat-Sen University, 70, Lien-Hai Road, Kaohsiung 80424, Taiwan (China); Wu, Hui-Fen, E-mail: hui@faculty.nsysu.edu.tw [Department of Chemistry, National Sun Yat-Sen University, 70, Lien-Hai Road, Kaohsiung 80424, Taiwan (China); Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70, Lien-Hai Road, Kaohsiung 80424, Taiwan (China); Doctoral Degree Program in Marine Biotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); School of Pharmacy, College of Pharmacy, Kaohsiung Medical University, Kaohsiung 800, Taiwan (China); Institute of Medical Science and Technology, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan (China)

    2015-03-01

    We have reported synthesis of bright blue colored hydrophobic carbon dots (hC-dots) using highly pure blend of polymers called Paraplast. We developed a hot injection method for making nearly monodispersed hC-dots with a diameter in a range: 5–30 nm as confirmed by high resolution transmission electron microscopy (HRTEM). The involvement of various functional groups was confirmed by Fourier transform infra-red (FTIR) spectroscopy. These hC-dots were incubated with breast cancer stem cells in order to check the entry as well as biological imaging. The cells were analyzed using epifluorescent microscopy. hC-dots showed concentration dependent cytotoxicity (LD{sub 50}: 50 mg/ml) and could be used for bioimaging even at lower concentration (0.5 mg/ml). hC-dots were found to be versatile agents for peeping inside the cells which could also be used for delivery of water insoluble chemotherapeutic agents to variety of solid tumors. - Highlights: • Synthesis of hydrophobic carbon dots from polymer based Paraplast • Deep blue color under the influence of UV light • Typical optical properties used for biological imaging • Biological imaging of breast cancer stem cells revealing potential of carbon dots.

  19. The role of surface and deep-level defects on the emission of tin oxide quantum dots

    International Nuclear Information System (INIS)

    Kumar, Vinod; Kumar, Vijay; Som, S; Ntwaeaborwa, O M; Swart, H C; Neethling, J H; Lee, Mike

    2014-01-01

    This paper reports on the role of surface and deep-level defects on the blue emission of tin oxide quantum dots (SnO 2 QDs) synthesized by the solution-combustion method at different combustion temperatures. X-ray diffraction studies showed the formation of a single rutile SnO 2 phase with a tetragonal lattice structure. High resolution transmission electron microscopy studies revealed an increase in the average dot size from 2.2 to 3.6 nm with an increase of the combustion temperature from 350 to 550 °C. A decrease in the band gap value from 3.37 to 2.76 eV was observed with the increase in dot size due to the quantum confinement effect. The photoluminescence emission was measured for excitation at 325 nm and it showed a broad blue emission band for all the combustion temperatures studied. This was due to the creation of various oxygen and tin vacancies/defects as confirmed by x-ray photoelectron spectroscopy data. The origin of the blue emission in the SnO 2 QDs is discussed with the help of an energy band diagram. (paper)

  20. Photoluminescence of spray pyrolysis deposited ZnO nanorods

    Directory of Open Access Journals (Sweden)

    Mikli Valdek

    2011-01-01

    Full Text Available Abstract Photoluminescence of highly structured ZnO layers comprising well-shaped hexagonal rods is presented. The ZnO rods (length 500-1,000 nm, diameter 100-300 nm were grown in air onto a preheated soda-lime glass (SGL or ITO/SGL substrate by low-cost chemical spray pyrolysis method using zinc chloride precursor solutions and growth temperatures in the range of 450-550°C. We report the effect of the variation in deposition parameters (substrate type, growth temperature, spray rate, solvent type on the photoluminescence properties of the spray-deposited ZnO nanorods. A dominant near band edge (NBE emission is observed at 300 K and at 10 K. High-resolution photoluminescence measurements at 10 K reveal fine structure of the NBE band with the dominant peaks related to the bound exciton transitions. It is found that all studied technological parameters affect the excitonic photoluminescence in ZnO nanorods. PACS: 78.55.Et, 81.15.Rs, 61.46.Km

  1. Long-range energy transfer in self-assembled quantum dot-DNA cascades

    Science.gov (United States)

    Goodman, Samuel M.; Siu, Albert; Singh, Vivek; Nagpal, Prashant

    2015-11-01

    The size-dependent energy bandgaps of semiconductor nanocrystals or quantum dots (QDs) can be utilized in converting broadband incident radiation efficiently into electric current by cascade energy transfer (ET) between layers of different sized quantum dots, followed by charge dissociation and transport in the bottom layer. Self-assembling such cascade structures with angstrom-scale spatial precision is important for building realistic devices, and DNA-based QD self-assembly can provide an important alternative. Here we show long-range Dexter energy transfer in QD-DNA self-assembled single constructs and ensemble devices. Using photoluminescence, scanning tunneling spectroscopy, current-sensing AFM measurements in single QD-DNA cascade constructs, and temperature-dependent ensemble devices using TiO2 nanotubes, we show that Dexter energy transfer, likely mediated by the exciton-shelves formed in these QD-DNA self-assembled structures, can be used for efficient transport of energy across QD-DNA thin films.The size-dependent energy bandgaps of semiconductor nanocrystals or quantum dots (QDs) can be utilized in converting broadband incident radiation efficiently into electric current by cascade energy transfer (ET) between layers of different sized quantum dots, followed by charge dissociation and transport in the bottom layer. Self-assembling such cascade structures with angstrom-scale spatial precision is important for building realistic devices, and DNA-based QD self-assembly can provide an important alternative. Here we show long-range Dexter energy transfer in QD-DNA self-assembled single constructs and ensemble devices. Using photoluminescence, scanning tunneling spectroscopy, current-sensing AFM measurements in single QD-DNA cascade constructs, and temperature-dependent ensemble devices using TiO2 nanotubes, we show that Dexter energy transfer, likely mediated by the exciton-shelves formed in these QD-DNA self-assembled structures, can be used for efficient

  2. High luminescent L-cysteine capped CdTe quantum dots prepared at different reaction times

    Science.gov (United States)

    Kiprotich, Sharon; Onani, Martin O.; Dejene, Francis B.

    2018-04-01

    This paper reports a facile synthesis route of high luminescent L-cysteine capped CdTe quantum dots (QDs). The effect of reaction time on the growth mechanism, optical and physical properties of the CdTe QDs was investigated in order to find the suitability of them towards optical and medical applications. The representative high-resolution transmission microscopy (HRTEM) analysis showed that the as-obtained CdTe QDs appeared as spherical particles with excellent monodispersity. The images exhibited clear lattice fringes which are indicative of good crystallinity. The X-ray diffraction (XRD) pattern displayed polycrystalline nature of the QDs which correspond well to zinc blende phase of bulk CdTe. The crystallite sizes calculated from the Scherrer equation were less than 10 nm for different reaction times which were in close agreement with the values estimated from HRTEM. An increase in reaction time improved crystallinity of the sample as explained by highest peak intensity of the XRD supported by the photoluminescence emission spectra which showed high intensity at a longer growth time. It was observed that for prolonged growth time the emission bands were red shifted from about 517-557 nm for 5-180 min of reaction time due to increase in particle sizes. Ultraviolet and visible analysis displayed well-resolved absorption bands which were red shifted upon an increase in reaction time. There was an inverse relation between the band gap and reaction time. Optical band gap decreases from 3.98 to 2.59 eV with the increase in reaction time from 15 to 180 min.

  3. Synthesis of red fluorescent graphene quantum dot-europium complex composites as a viable bio imaging platform

    International Nuclear Information System (INIS)

    Liu, Yanting; Fan, Louzhen; Zhou, Shixin; Fan, Hong

    2016-01-01

    We have prepared graphene quantum dot-europium(III) complex composites by noncovalently connecting chelating ligands dibenzoylmethane (DBM) and 1,10-phenanthroline (Phen) with graphene quantum dots (GQDs) first, followed by coordination to Eu(III). The resulting composites are well water-soluble and display red fluorescence of high color purity. The composites were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction. Aqueous solutions of the composites under 365 nm excitation display fluorescence with a peak at 613 nm and a quantum yield as high as 15.5 %. The good water solubility and stable photoluminescence make the composites very different from other Eu(III)-based coordination complexes. The composites are cell viable and can be used to label both the cell membrane and the cytoplasm of MCF-7 cells. They are also shown to act as bioprobes for in-vivo localization of tumorous tissue. In our perception, such composites are expected to possess wide scope because of the many functionalizations that are possible with GQDs. (author)

  4. Photoluminescent carbogenic nanoparticles directly derived from crude biomass

    KAUST Repository

    Krysmann, Marta J.

    2012-01-01

    We present an environmentally benign, energy efficient and readily scalable approach to synthesize photoluminescent carbogenic nanoparticles directly from soft tissue biomass. Our approach relies on the pyrolytic decomposition of grass that gives rise to the formation of well-defined nanoparticles. The carbogenic nanoparticles can be readily surface modified, generating a series of highly selective photoluminescent materials that exhibit remarkable stability upon prolonged exposure to aggressive, high-temperature, high-salinity environment. © 2012 The Royal Society of Chemistry.

  5. Red carbon dots-based phosphors for white light-emitting diodes with color rendering index of 92.

    Science.gov (United States)

    Zhai, Yuechen; Wang, Yi; Li, Di; Zhou, Ding; Jing, Pengtao; Shen, Dezhen; Qu, Songnan

    2018-05-29

    Exploration of solid-state efficient red emissive carbon dots (CDs) phosphors is strongly desired for the development of high performance CDs-based white light-emitting diodes (WLEDs). In this work, enhanced red emissive CDs-based phosphors with photoluminescence quantum yields (PLQYs) of 25% were prepared by embedding red emissive CDs (PLQYs of 23%) into polyvinyl pyrrolidone (PVP). Because of the protection of PVP, the phosphors could preserve strong luminescence under long-term UV excitation or being mixed with conventional packaging materials. By applying the red emissive phosphors as the color conversion layer, WLEDs with high color rendering index of 92 and color coordinate of (0.33, 0.33) are fabricated. Copyright © 2018 Elsevier Inc. All rights reserved.

  6. Spin effects in InAs self-assembled quantum dots

    Directory of Open Access Journals (Sweden)

    Brasil Maria

    2011-01-01

    Full Text Available Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs in the center of a GaAs quantum well (QW. We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

  7. Color tunable hybrid light-emitting diodes based on perovskite quantum dot/conjugated polymer

    Science.gov (United States)

    Germino, José C.; Yassitepe, Emre; Freitas, Jilian N.; Santiago, Glauco M.; Bonato, Luiz Gustavo; de Morais, Andréia; Atvars, Teresa D. Z.; Nogueira, Ana F.

    2017-08-01

    Inorganic organic metal halide perovskite materials have been investigated for several technological applications, such as photovoltaic cells, lasers, photodetectors and light emitting diodes (LEDs), either in the bulk form or as colloidal nanoparticles. Recently, all inorganic Cesium Lead Halide (CsPbX3, X=Cl,Br, I) perovskite quantum dots (PQDs) were reported with high photoluminescence quantum yield with narrow emission lines in the visible wavelengths. Here, green-emitting perovskite quantum dots (PQDs) prepared by a synthetic method based on a mixture of oleylamine and oleic acid as surfactants were applied in the electroluminescent layer of hybrid LEDs in combination with two different conjugated polymers: polyvinylcarbazole (PVK) or poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). The performance of the diodes and the emission color tuning upon dispersion of different concentrations of the PQDs in the polymer matrix is discussed. The presented approach aims at the combination of the optical properties of the PQDs and their interaction with wide bandgap conjugated polymers, associated with the solution processing ability of these materials.

  8. Fluorescence Stability of Mercaptopropionic Acid Capped Cadmium Telluride Quantum Dots in Various Biochemical Buffers.

    Science.gov (United States)

    Borse, Vivek; Kashikar, Adisha; Srivastava, Rohit

    2018-04-01

    Quantum dots are the semiconductor nanocrystals having unique optical and electronic properties. Quantum dots are category of fluorescent labels utilized for biological tagging, biosensing, bioassays, bioimaging and in vivo imaging as they exhibit very small size, signal brightness, photostability, tuning of light emission range, longer photoluminescence decay time as compared to organic dyes. In this work, we have synthesized and characterized mercaptopropionic acid capped cadmium telluride quantum dots (MPA-CdTe QDs) using hydrothermal method. The study further reports fluorescence intensity stability of quantum dots suspended in different buffers of varying concentration (1-100 mM), stored at various photophysical conditions. Fluorescence intensity values were reduced with increase in buffer concentration. When the samples were stored at room temperature in ambient light condition the quantum dots suspended in different buffers lost the fluorescence intensity after day 15 (except TRIS II). Fluorescence intensity values were found stable for more than 30 days when the samples were stored in dark condition. Samples stored in refrigerator displayed modest fluorescence intensity even after 300 days of storage. Thus, storage of MPA-CdTe QDs in refrigerator may be the suitable choice to maintain its fluorescence stability for longer time for further application.

  9. Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

    Science.gov (United States)

    Chen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.

    2008-07-01

    This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at ˜1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the ˜1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs.

  10. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  11. A sol-gel method for preparing ZnO quantum dots with strong blue emission

    International Nuclear Information System (INIS)

    Chen Zhong; Li Xiaoxia; Du Guoping; Chen Nan; Suen, Andy Y.M.

    2011-01-01

    ZnO quantum dots (QDs) with strong blue emission have been successfully synthesized by sol-gel method, and their crystal structures, sizes, and photoluminescence properties were characterized by X-ray diffractometer, scanning electron microscope, and ultraviolet-visible spectroscopy. It has been found that ZnO QDs had a hexagonal wurtzite crystal structure, and their average diameter was about 16.0-32.2 nm. Both the reaction time and temperature were found to have a strong influence on the average size and photoluminescence properties of ZnO QDs. Longer reaction time and higher reaction temperature resulted in larger average size for ZnO QDs. It has been shown that at reaction temperature 60 deg. C the emission intensity for ZnO QDs increased first with reaction time before 7 h and then decreased after 7 h. For the same reaction time 7 h, ZnO QDs synthesized at 60 deg. C showed the strongest emission intensity. It was found that annealing in nitrogen, vacuum, and air all resulted in an increase of the size of ZnO QDs and a reduction in their photoluminescence. The dependence of the size and properties of ZnO QDs on the reaction parameters as well as the annealing conditions has been discussed. - Highlights: → ZnO quantum dots (QDs) with strong blue emission were prepared by sol-gel method. → ZnO QDs had a pure spectral blue with the chromaticity coordinates (0.166, 0.215). → Optimal reaction time and temperature were 7 h and 60 deg. C, respectively.

  12. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

    Science.gov (United States)

    Bru-Chevallier, C; El Akra, A; Pelloux-Gervais, D; Dumont, H; Canut, B; Chauvin, N; Regreny, P; Gendry, M; Patriarche, G; Jancu, J M; Even, J; Noe, P; Calvo, V; Salem, B

    2011-10-01

    The aim of this study is to achieve homogeneous, high density and dislocation free InGaAs quantum dots grown by molecular beam epitaxy for light emission on silicon substrates. This work is part of a project which aims at overcoming the severe limitation suffered by silicon regarding its optoelectronic applications, especially efficient light emission device. For this study, one of the key points is to overcome the expected type II InGaAs/Si interface by inserting the InGaAs quantum dots inside a thin silicon quantum well in SiO2 fabricated on a SOI substrate. Confinement effects of the Si/SiO2 quantum well are expected to heighten the indirect silicon bandgap and then give rise to a type I interface with the InGaAs quantum dots. Band structure and optical properties are modeled within the tight binding approximation: direct energy bandgap is demonstrated in SiO2/Si/InAs/Si/SiO2 heterostructures for very thin Si layers and absorption coefficient is calculated. Thinned SOI substrates are successfully prepared using successive etching process resulting in a 2 nm-thick Si layer on top of silica. Another key point to get light emission from InGaAs quantum dots is to avoid any dislocations or defects in the quantum dots. We investigate the quantum dot size distribution, density and structural quality at different V/III beam equivalent pressure ratios, different growth temperatures and as a function of the amount of deposited material. This study was performed for InGaAs quantum dots grown on Si(001) substrates. The capping of InGaAs quantum dots by a silicon epilayer is performed in order to get efficient photoluminescence emission from quantum dots. Scanning transmission electronic microscopy images are used to study the structural quality of the quantum dots. Dislocation free In50Ga50As QDs are successfully obtained on a (001) silicon substrate. The analysis of QDs capped with silicon by Rutherford Backscattering Spectrometry in a channeling geometry is also presented.

  13. Improved emission spectrum from quantum dot superluminescent light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Li, L.H.; Rossetti, M.; Fiore, A. [Institute of Photonics and Quantum Electronics, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne (Switzerland); Occhi, L.; Velez, C. [EXALOS AG, Technoparkstrasse 1, 8005 Zuerich (Switzerland)

    2006-12-15

    The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) spectrum. A broad PL spectral width up to 96 nm is achieved from a single QD layer with InAs thickness smaller than 2.4 monolayers at a growth temperature of 510 C. QD Superluminescent light emitting diodes with an ultrawide (115 nm), smooth output spectrum are obtained by incorporating this QD layer into chirped stacked structures. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Fluorescent quantum dot hydrophilization with PAMAM dendrimer

    Science.gov (United States)

    Potapkin, Dmitry V.; Geißler, Daniel; Resch-Genger, Ute; Goryacheva, Irina Yu.

    2016-05-01

    Polyamidoamine (PAMAM) dendrimers were used to produce CdSe core/multi-shell fluorescent quantum dots (QDs) which are colloidally stable in aqueous solutions. The size, charge, and optical properties of QDs functionalized with the 4th (G4) and 5th (G5) generation of PAMAM were compared with amphiphilic polymer-covered QDs and used as criteria for the evaluation of the suitability of both water solubilization methods. As revealed by dynamic and electrophoretic light scattering (DLS and ELS), the hydrodynamic sizes of the QDs varied from 30 to 65 nm depending on QD type and dendrimer generation, with all QDs displaying highly positive surface charges, i.e., zeta potentials of around +50 mV in water. PAMAM functionalization yielded stable core/multi-shell QDs with photoluminescence quantum yields ( Φ) of up to 45 %. These dendrimer-covered QDs showed a smaller decrease in their Φ upon phase transfer compared with QDs made water soluble via encapsulation with amphiphilic brush polymer bearing polyoxyethylene/polyoxypropylene chains.

  15. Fluorescent quantum dot hydrophilization with PAMAM dendrimer

    Energy Technology Data Exchange (ETDEWEB)

    Potapkin, Dmitry V., E-mail: potapkindv@gmail.com [Saratov State University, Department of General and Inorganic Chemistry, Chemistry Institute (Russian Federation); Geißler, Daniel, E-mail: daniel.geissler@bam.de; Resch-Genger, Ute, E-mail: ute.resch@bam.de [BAM - Federal Institute for Materials Research and Testing (Germany); Goryacheva, Irina Yu., E-mail: goryachevaiy@mail.ru [Saratov State University, Department of General and Inorganic Chemistry, Chemistry Institute (Russian Federation)

    2016-05-15

    Polyamidoamine (PAMAM) dendrimers were used to produce CdSe core/multi-shell fluorescent quantum dots (QDs) which are colloidally stable in aqueous solutions. The size, charge, and optical properties of QDs functionalized with the 4th (G4) and 5th (G5) generation of PAMAM were compared with amphiphilic polymer-covered QDs and used as criteria for the evaluation of the suitability of both water solubilization methods. As revealed by dynamic and electrophoretic light scattering (DLS and ELS), the hydrodynamic sizes of the QDs varied from 30 to 65 nm depending on QD type and dendrimer generation, with all QDs displaying highly positive surface charges, i.e., zeta potentials of around +50 mV in water. PAMAM functionalization yielded stable core/multi-shell QDs with photoluminescence quantum yields (Φ) of up to 45 %. These dendrimer-covered QDs showed a smaller decrease in their Φ upon phase transfer compared with QDs made water soluble via encapsulation with amphiphilic brush polymer bearing polyoxyethylene/polyoxypropylene chains.

  16. Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes

    Directory of Open Access Journals (Sweden)

    Heyn Ch

    2010-01-01

    Full Text Available Abstract We study the optical emission of single GaAs quantum dots (QDs. The QDs are fabricated by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion by local droplet etching with Al droplets. Using suitable process parameters, we create either uniform QDs in partially filled deep holes or QDs with very broad size distribution in completely filled shallow holes. Micro photoluminescence measurements of single QDs of both types establish sharp excitonic peaks. We measure a fine-structure splitting in the range of 22–40μeV and no dependence on QD size. Furthermore, we find a decrease in exciton–biexciton splitting with increasing QD size.

  17. Theoretical analysis of quantum dot amplifiers with high saturation power and low noise figure

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers.......Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers....

  18. Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities

    DEFF Research Database (Denmark)

    Reitzenstein, S.; Schneider, C.; Albert, F.

    2011-01-01

    Semiconductor quantum dots (QDs) are fascinating nanoscopic structures for photonics and future quantum information technology. However, the random position of self-organized QDs inhibits a deterministic coupling in devices relying on cavity quantum electrodynamics (cQED) effects which complicates......, e.g., the large scale fabrication of quantum light sources. As a result, large efforts focus on the growth and the device integration of site-controlled QDs. We present the growth of low density arrays of site-controlled In(Ga)As QDs where shallow etched nanoholes act as nucleation sites...... linewidth, the oscillator strength and the quantum efficiency. A stacked growth of strain coupled SCQDs forming on wet chemically etched nanoholes provide the smallest linewidth with an average value of 210 μeV. Using time resolved photoluminescence studies on samples with a varying thickness of the capping...

  19. Application of Quantum Dot nanocrystal in Luminescent solar concentrators

    Science.gov (United States)

    Bakhoda, Shokoufeh; Khalaji Assadi, Morteza; Ahmadi Kandjani, Sohrab; Kayiem, Hussain H. Al; Hussain Bhat, Aamir

    2018-03-01

    The basic design of luminescent solar concentrator is a transparent plate doped with an appropriate luminescent material (organic dyes, quantum dots), which is able to absorb sunlight (direct and diffuse), and then guides photons produced by photoluminescence to its narrow edges where they are converted by photovoltaic cells. Unfortunately, LSCs have suffered from numerous efficiency losses. Therefore, new luminescent species and novel approaches are needed for its practical application. This paper deals with investigation of nonhazardous, environmental friendly luminescent species include CuInS2/ZnS core/shell QDs. The CuInS2/ZnS QDs possess advantages of Stocks shift as large as more than 130 nm and high photoluminescence quantum yield of 80%. The paper presents the effect of large stock shift CuInS2/ZnS QDs on reducing the reabsorption losses in LSC by using experimental investigation. The LSC sheets were fabricated by dispersing CuInS2/ZnS QDs particles in a polymethylmethacrylate waveguide. A series of LSCs (dimension 4.0 cm × 3.0 cm × 0.3cm) with different CuInS2/ZnS QDs particles concentration (0.015 and 0.03 wt.%) were fabricated and their optical properties (absorptions/emissions) were characterized. The results show that the CuInS2/ZnS QDs-LSC provides a promising way for the reduction of reabsorption losses in LSCs.

  20. A robust ligand exchange approach for preparing hydrophilic, biocompatible photoluminescent quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Sujuan; Zhou, Changhua [Key Laboratory for Special Functional Materials of the Ministry of Education, Henan University, Kaifeng 475004 (China); Yuan, Hang [Life Science Division, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Shen, Huaibin [Key Laboratory for Special Functional Materials of the Ministry of Education, Henan University, Kaifeng 475004 (China); Zhao, Wenxiu [Life Science Division, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Ma, Lan, E-mail: malan@sz.tsinghua.edu.cn [Life Science Division, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Li, Lin Song, E-mail: lsli@henu.edu.cn [Key Laboratory for Special Functional Materials of the Ministry of Education, Henan University, Kaifeng 475004 (China)

    2013-08-01

    Graphical abstract: - Highlights: • Aqueous CdSe/ZnS QDs were prepared using polymaleic anhydrides as capping ligand. • Effect of reaction temperature and time were systematically studied in the synthesis process. • Water-soluble QDs exhibited a good stability in physiological relevant environment. • The aqueous QDs were applied as biological probe to detect human embryonic stem cell. - Abstract: This paper describes a robust ligand exchange approach for preparing biocompatible CdSe/ZnS quantum dots (QDs) to make bioprobe for effective cell imaging. In this method, polymaleic anhydride (PMA) ligand are first used to replace original hydrophobic ligand (oleic acid) and form a protection shell with multiple hydrophilic groups to coat and protect CdSe/ZnS QDs. The as-prepared aqueous QDs exhibit small particle size, good colloidal stability in aqueous solutions with a wide range of pH, salt concentrations and under thermal treatment, which are necessary for biological applications. The use of this new class of aqueous QDs for effective cell imaging shows strong fluorescence signal to human embryonic stem cell, which demonstrate that PMA coated QDs are fully satisfied with the requirements of preparing high quality biological probe.

  1. Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique

    Directory of Open Access Journals (Sweden)

    Sakuma Y

    2006-01-01

    Full Text Available AbstractAn atomic-force microscope assisted technique is developed to control the position and size of self-assembled semiconductor quantum dots (QDs. Presently, the site precision is as good as ± 1.5 nm and the size fluctuation is within ± 5% with the minimum controllable lateral diameter of 20 nm. With the ability of producing tightly packed and differently sized QDs, sophisticated QD arrays can be controllably fabricated for the application in quantum computing. The optical quality of such site-controlled QDs is found comparable to some conventionally self-assembled semiconductor QDs. The single dot photoluminescence of site-controlled InAs/InP QDs is studied in detail, presenting the prospect to utilize them in quantum communication as precisely controlled single photon emitters working at telecommunication bands.

  2. 3,4-Phenylenedioxythiophene (PheDOT) Based Hole-Transporting Materials for Perovskite Solar Cells.

    Science.gov (United States)

    Chen, Jian; Chen, Bai-Xue; Zhang, Fang-Shuai; Yu, Hui-Juan; Ma, Shuang; Kuang, Dai-Bin; Shao, Guang; Su, Cheng-Yong

    2016-04-05

    Two new electron-rich molecules based on 3,4-phenylenedioxythiophene (PheDOT) were synthesized and successfully adopted as hole-transporting materials (HTMs) in perovskite solar cells (PSCs). X-ray diffraction, absorption spectra, photoluminescence spectra, electrochemical properties, thermal stabilities, hole mobilities, conductivities, and photovoltaic parameters of PSCs based on these two HTMs were compared with each other. By introducing methoxy substituents into the main skeleton, the energy levels of PheDOT-core HTM were tuned to match with the perovskite, and its hole mobility was also improved (1.33×10(-4)  cm(2)  V(-1)  s(-1) , being higher than that of spiro-OMeTAD, 2.34×10(-5)  cm(2)  V(-1)  s(-1)). The PSC based on MeO-PheDOT as HTM exhibits a short-circuit current density (Jsc) of 18.31 mA cm(-2) , an open-circuit potential (Voc ) of 0.914 V, and a fill factor (FF) of 0.636, yielding an encouraging power conversion efficiency (PCE) of 10.64 % under AM 1.5G illumination. These results give some insight into how the molecular structures of HTMs affect their performances and pave the way for developing high-efficiency and low-cost HTMs for PSCs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Controlled fabrication and tunable photoluminescence properties of Mn2+ doped graphene–ZnO composite

    International Nuclear Information System (INIS)

    Luan, Xinglong; Zhang, Yihe; Tong, Wangshu; Shang, Jiwu; An, Qi; Huang, Hongwei

    2014-01-01

    Highlights: • Graphene–ZnO composites were synthesized by a mixed solvothermal method. • ZnO quantum dots are distributed uniformly on the graphene sheets. • A possible hypothesis is raised for the influence of graphene oxide on the nucleation of ZnO. • Mn 2+ doped graphene–ZnO composites were fabricated and the emission spectra can be tuned by doping. - Abstract: Graphene–ZnO composites (G–ZnO) with controlled morphology and photoluminescence property were synthesized by a mixed solvothermal method. Mixed solvent were composed by dimethyl sulfoxide and ethylene glycol. Fourier transform infrared spectroscopy, transmission electron microscopy and photoluminescence spectra were used to characterize G–ZnO. Graphene as a substrate can help the distribution and the dispersity of ZnO, and a possible model of the interaction between graphene oxide and ZnO particles is proposed. At the same time, graphene also reduce the size of ZnO particles to about 5 nm. Furthermore, Mn 2+ ions dopes G–ZnO successfully by the mixed solvothermal synthesis and the doping of Mn 2+ makes G–ZnO shift red from 465 nm to 548 nm and 554 nm in the emission spectrum. The changes of the emission spectrum by the adding of Mn 2+ make G–ZnO have tunable photoluminescence spectrum which is desirable for practical applications

  4. High resolution STEM of quantum dots and quantum wires

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima

    2013-01-01

    This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...

  5. A highly bioactive poly (amido amine)/70S30C bioactive glass hybrid with photoluminescent and antimicrobial properties for bone regeneration.

    Science.gov (United States)

    Akbari Dourbash, Fakhraddin; Alizadeh, Parvin; Nazari, Shahram; Farasat, Alireza

    2017-09-01

    The field of tissue engineering constantly calls for novel biomaterials that possess intrinsically multifunctional properties such as bioactivity, bioimaging ability and antibacterial properties. In this paper, poly (amido amine) generation 5/bioactive glass inorganic-organic hybrids have been developed through direct hybridization by 3-glycidoxypropyltrimethoxysilane (GPTMS) as coupling agent. Results indicated that the degree of covalent coupling by GPTMS and the weight percent of inorganic and organic constituents highly influence hybrids properties. It was found that nanoscale integration of inorganic and organic chains by GPTMS significantly endows hybrids with high thermal stability. Furthermore, hybrids exhibited photoluminescent ability (emission 400-600nm and 700nm) without incorporating of any organic dyes or quantum dots. In addition, hydrophilicity of our hybrids indicated good cell/material interaction. The biological apatite was formed on the surface of calcium containing hybrids when soaked in simulated body fluid (SBF) for 1week. Hybrids also showed linear biodegradation behavior in SBF that could be controlled by the degree of covalent crosslinking which was indicative of their stable biodegradation ability. High inherent antibacterial properties against Staphylococcus aureus was also observed from poly (amido amine)/silica hybrids. No adverse cytotoxicity for human gingival fibroblast cell lines (HGF) was detected after 4days. It is envisaged that our novel multifunctional hybrid system will confer intriguing potential in advancing the field of tissue engineering. Copyright © 2017 Elsevier B.V. All rights reserved.

  6. Ultrafast light matter interaction in CdSe/ZnS core-shell quantum dots

    Science.gov (United States)

    Yadav, Rajesh Kumar; Sharma, Rituraj; Mondal, Anirban; Adarsh, K. V.

    2018-04-01

    Core-shell quantum dot are imperative for carrier (electron and holes) confinement in core/shell, which provides a stage to explore the linear and nonlinear optical phenomena at the nanoscalelimit. Here we present a comprehensive study of ultrafast excitation dynamics and nonlinear optical absorption of CdSe/ZnS core shell quantum dot with the help of ultrafast spectroscopy. Pump-probe and time-resolved measurements revealed the drop of trapping at CdSe surface due to the presence of the ZnS shell, which makes more efficient photoluminescence. We have carried out femtosecond transient absorption studies of the CdSe/ZnS core-shell quantum dot by irradiation with 400 nm laser light, monitoring the transients in the visible region. The optical nonlinearity of the core-shell quantum dot studied by using the Z-scan technique with 120 fs pulses at the wavelengths of 800 nm. The value of two photon absorption coefficients (β) of core-shell QDs extracted as80cm/GW, and it shows excellent benchmark for the optical limiting onset of 2.5GW/cm2 with the low limiting differential transmittance of 0.10, that is an order of magnitude better than graphene based materials.

  7. Simple process of hybrid white quantum dot/organic light-emitting diodes by using quantum dot plate and fluorescence

    Science.gov (United States)

    Lee, Ho Won; Lee, Ki-Heon; Lee, Jae Woo; Kim, Jong-Hoon; Yang, Heesun; Kim, Young Kwan

    2015-02-01

    In this work, the simple process of hybrid quantum dot (QD)/organic light-emitting diode (OLED) was proposed to apply a white illumination light by using QD plate and organic fluorescence. Conventional blue fluorescent OLEDs were firstly fabricated and then QD plates of various concentrations, which can be controlled of UV-vis absorption and photoluminescence spectrum, were attached under glass substrate of completed blue devices. The suggested process indicates that we could fabricate the white device through very simple process without any deposition of orange or red organic emitters. Therefore, this work would be demonstrated that the potential simple process for white applications can be applied and also can be extended to additional research on light applications.

  8. Luminescent Cd{sub 1−x}Zn{sub x}S quantum dots synthesized by a nanoemulsion method, assisted by an ultrasonic probe

    Energy Technology Data Exchange (ETDEWEB)

    Rosiles-Perez, C. [Universidad de Guanajuato, Departamento de Quimica, Unidad Pueblito de Rocha, Campus Guanajuato, Cerro de la Venada s/n, Col. Pueblito de Rocha, CP 36040 Guanajuato (Mexico); Lambert, J. [CIATEC, A.C, Omega no. 201 Colonia: Industrial Delta, C.P. 37545 León, Guanajuato (Mexico); Alatorre-Ordaz, A., E-mail: alatorre@ugto.mx [Universidad de Guanajuato, Departamento de Quimica, Unidad Pueblito de Rocha, Campus Guanajuato, Cerro de la Venada s/n, Col. Pueblito de Rocha, CP 36040 Guanajuato (Mexico); Gutierrez, J.A. [Universidad de Guanajuato, Departamento de Quimica, Unidad Pueblito de Rocha, Campus Guanajuato, Cerro de la Venada s/n, Col. Pueblito de Rocha, CP 36040 Guanajuato (Mexico); López-Luke, T. [Centro de Investigaciones en Óptica, A.P. 1-948, León, Gto. 37160 (Mexico); Ramirez-Fuentes, R. [Universidad de Guanajuato, Departamento de Quimica, Unidad Pueblito de Rocha, Campus Guanajuato, Cerro de la Venada s/n, Col. Pueblito de Rocha, CP 36040 Guanajuato (Mexico); Kobayashi, T. [Department of Materials Science and Technology, Nagaoka University of Technology, Kamitomioka, Nagaoka 940-2188 (Japan)

    2017-04-15

    A series of colloidal quantum dots (QDs) of CdS, ZnS, and the ternary chalcogenide Cd{sub 1−x}Zn{sub x}S were synthesized by a nanoemulsion method, using a sonication probe as shearing power source. Quantum dots with diameters between 4 and 5 nm and cubic crystal structure were obtained and measured by HRTEM and XRD. In all cases, homogeneous solid solutions were obtained, as revealed by Vegard's Law, except with Cd{sub 0.39}Zn{sub 0.61}S. Optical properties of colloidal QDs were measured; the absorption edge is blue shifted, as the content of Zn increases, and showed a quantum confinement. Different emitted colors under UV light was observed, from dark brown with CdS to deep blue with ZnS. QDs of Cd{sub 0.39}Zn{sub 0.61}S show a white photoluminescence. Photoluminescence of the colloidal QDs is due to the combination of the direct band emissions and the trap emissions.

  9. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

    Directory of Open Access Journals (Sweden)

    Yoon SF

    2006-01-01

    Full Text Available AbstractSelf-assembled GaInNAs quantum dots (QDs were grown on GaAs (001 substrate using solid-source molecular-beam epitaxy (SSMBE equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM, photoluminescence (PL, and transmission electron microscopy (TEM measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW operation at room temperature (RT with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2 at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2, with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.

  10. Second-harmonic scanning optical microscopy of semiconductor quantum dots

    DEFF Research Database (Denmark)

    Vohnsen, B.; Bozhevolnyi, S.I.; Pedersen, K.

    2001-01-01

    Second-harmonic (SH) optical imaging of self-assembled InAlGaAs quantum dots (QD's) grown on a GaAs(0 0 1) substrate has been accomplished at room temperature by use of respectively a scanning far-field optical microscope in reflection mode and a scanning near-field optical microscope...... in transmission mode. In both cases the SH signal peaks at a pump wavelength of similar to 885 nm in correspondence to the maximum in the photoluminescence spectrum of the QD sample. SH near-field optical images exhibit spatial signal variations on a subwavelength scale that depend on the pump wavelength. We...

  11. Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations

    OpenAIRE

    Kuznetsova, M. S.; Flisinski, K.; Gerlovin, I. Ya.; Ignatiev, I. V.; Kavokin, K. V.; Verbin, S. Yu.; Yakovlev, D. R.; Reuter, D.; Wieck, A. D.; Bayer, M.

    2013-01-01

    The role of nuclear spin fluctuations in the dynamic polarization of nuclear spins by electrons is investigated in (In,Ga)As quantum dots. The photoluminescence polarization under circularly polarized optical pumping in transverse magnetic fields (Hanle effect) is studied. A weak additional magnetic field parallel to the optical axis is used to control the efficiency of nuclear spin cooling and the sign of nuclear spin temperature. The shape of the Hanle curve is drastically modified with cha...

  12. Polarized fine structure in the excitation spectrum of a negatively charged quantum dot

    OpenAIRE

    Ware, M. E.; Stinaff, E. A.; Gammon, D.; Doty, M. F.; Bracker, A. S.; Gershoni, D.; Korenev, V. L.; Badescu, S. C.; Lyanda-Geller, Y.; Reinecke, T. L.

    2005-01-01

    We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of qua...

  13. Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

    Directory of Open Access Journals (Sweden)

    Adenilson José Chiquito

    2004-09-01

    Full Text Available A systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us to obtain reliable information on the microscopic structural evolution of this system. The single layer and the multilayer quantum dots were found to respond differently to the annealing process, due to the differences in strain that occur in both systems. The diffusion activated by strain provoked the appearance of an InGaAs alloy layer in substitution to the quantum dots layers; this change occurred at the annealing temperature T = 600 ºC in the multilayer system. A single dot layer, however, was observed even after the annealing at T = 700 ºC. Moreover, the low temperature annealing was found to improve the homogeneity of the multilayer system and to decrease the electrical interlayer coupling.

  14. High-Q submicron-diameter quantum-dot microcavity pillars for cavity QED experiments

    DEFF Research Database (Denmark)

    Gregersen, Niels; Lermer, Matthias; Dunzer, Florian

    As/AlAs micropillar design where Bloch-wave engineering is employed to significally enhance the cavity mode confinement in the submicron diameter regime. We demonstrate a record-high vacuum Rabi splitting of 85 µeV of the strong coupling for pillars incorporating quantum dots with modest oscillator strength f ≈ 10....... It is well-known that light-matter interaction depends on the photonic environment, and thus proper engineering of the optical mode in microcavity systems is central to obtaining the desired functionality. In the strong coupling regime, the visibility of the Rabi splitting is described by the light...... coupling in micropillars relied on quantum dots with high oscillator strengths f > 50, our advanced design allows for the observation of strong coupling for submicron diameter quantum dot-pillars with standard f ≈ 10 oscillator strength. A quality factor of 13600 and a vacuum Rabi splitting of 85 µe...

  15. "Cloud" assemblies: quantum dots form electrostatically bound dynamic nebulae around large gold nanoparticles.

    Science.gov (United States)

    Lilly, G Daniel; Lee, Jaebeom; Kotov, Nicholas A

    2010-10-14

    Dynamic self-assembled structures of nanoparticles can be produced using predominantly electrostatic interactions. Such assemblies were made from large, positively charged Au metal nanoparticles surrounded by an electrostatically bound cloud of smaller, negatively charged CdSe/ZnS or CdTe quantum dots. At low concentrations they are topologically similar to double electric layers of ions and corona-like assemblies linked by polymer chains. They can also be compared to the topological arrangement of some planetary systems in space. The great advantages of the cloud assemblies are (1) their highly dynamic nature compared to more rigid covalently bound assemblies, (2) simplicity of preparation, and (3) exceptional versatility in components and resulting optical properties. Photoluminescence intensity enhancement originating from quantum resonance between excitons and plasmons was observed for CdSe/ZnS quantum dots, although CdTe dots displayed emission quenching. To evaluate more attentively their dynamic behavior, emission data were collected for the cloud-assemblies with different ratios of the components and ionic strengths of the media. The emission of the system passes through a maximum for 80 QDs ∶ 1 Au NP as determined by the structure of the assemblies and light absorption conditions. Ionic strength dependence of luminescence intensity contradicts the predictions based on the Gouy-Chapman theory and osmotic pressure at high ionic strengths due to formation of larger chaotic colloidally stable assemblies. "Cloud" assemblies made from different nanoscale components can be used both for elucidation of most fundamental aspects of nanoparticle interactions, as well as for practical purposes in sensing and biology.

  16. Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation

    NARCIS (Netherlands)

    Robert, C.; Cornet, C.; da Silva, K.P.; Turban, G.; Mauger, S.J.C.; Thanh, T.N.; Even, J.; Jancu, J.M.; Perrin, M.; Folliot, H.; Rohel, T.; Tricot, S.; Balocchi, A.; Barate, P.; Marie, X.; Koenraad, P.M.; Alonso, M.I.; Goni, N.; Bertru, N.; Durand, O.; Corre, Le A.

    2013-01-01

    The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a

  17. Fluorescence resonance energy transfer measured by spatial photon migration in CdSe-ZnS quantum dots colloidal systems as a function of concentration

    Energy Technology Data Exchange (ETDEWEB)

    Azevedo, G.; Monte, A. F. G.; Reis, A. F.; Messias, D. N. [Laboratório de Espectroscopia Óptica, Instituto de Física, Universidade Federal de Uberlândia, Uberlândia, MG 38400-902 (Brazil)

    2014-11-17

    The study of the spatial photon migration as a function of the concentration brings into attention the problem of the energy transfer in quantum dot embedded systems. By measuring the photon propagation and its spatial dependence, it is possible to understand the whole dynamics in a quantum dot system, and also improve their concentration dependence to maximize energy propagation due to radiative and non-radiative processes. In this work, a confocal microscope was adapted to scan the spatial distribution of photoluminescence from CdSe-ZnS core-shell quantum dots in colloidal solutions. The energy migration between the quantum dots was monitored by the direct measurement of the photon diffusion length, according to the diffusion theory. We observed that the photon migration length decreases by increasing the quantum dot concentration, this kind of behavior has been regarded as a signature of Förster resonance energy transfer in the system.

  18. Raman spectroscopy of in situ annealed InAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Luna, M.J.M. de; Somintac, A.; Estacio, E.; Salvador, A.

    2004-01-01

    Nonresonant Raman scattering measurements were performed on a three-layered sample of in situ annealed InAs/GaAs self-assembled quantum dots. The thermal annealing step was done during the growth of each GaAs spacer layer, where the substrate temperature was raised from 530 deg. C to 580 deg. C as measured by a pyrometer. Three Raman signals are clearly seen at 264 cm -1 , 268 cm -1 , and 271.5 cm -1 which can be attributed to the longitudinal optic (LO) phonons of the dots. These three different signals are attributed to different degrees of In/Ga alloying or intermixing in each dot layer as a consequence of the different thermal treatments that each layer was subjected to. The Raman signal of the wetting layer (WL) is remarkably weak and suggests erosion of the wetting layer. In contrast, Raman scattering measurements on an unannealed sample show two overlapping features at 259.5 cm -1 and 261.5 cm -1 , which are attributed to the LO phonons of the dots. The WL signal is clearly observed at 251.5 cm -1 . To support our Raman observations, the appearance of a strong higher-energy peak in photoluminescence measurements suggests that alloying did occur in the annealed sample

  19. Solvatochromism in highly luminescent environmental friendly carbon quantum dots for sensing applications: Conversion of bio-waste into bio-asset

    Science.gov (United States)

    Pramanik, A.; Biswas, S.; Kumbhakar, P.

    2018-02-01

    Recently studies on synthesis and fluorescence based sensing in biocompatible carbon quantum dots (CQDs) have become a widely spoken topic of research due to the several advantageous properties of CQDs in compared to semiconductor quantum dots. In this work, we have reported the rarely reported solvatochromism along-with a high photoluminescence (PL) quantum yield (PLQY) of 22%. Samples have been synthesized by using a simple process of hydrothermal carbonization of a naturally occurring bio-waste i.e. Aegle marmelos leaves powder. The linear absorption and PL emission characteristics of CQDs have been studied in different solvent environments to explore the origin of the observed excitation dependent PL emissions characteristics of the sample. The interesting solvatochromic PL (SPL) behavior of CQDs are observed at an excitation wavelength of 325 nm by dispersing them in different polar protic and aprotic solvents, which suggest their possible applications as a replacement of solvatochromic dye molecules for sensing applications. Different polarity functions and molecular-microscopic solvent polarity parameter (ETN) are used to calculate the change in dipole moment (Δδ) of the solute-solvent system and the origin of SPL in CQDs has been explained. The SPL behavior of CQDs has been utilized for fluorescence sensing of organic liquids (Ethanol and Tetrahydrofuran) in water. Whereas, the photo-induced electron transfer mediated quenching in PL of aqueous dispersion of CQDs has led to development of ;turn off; fluorescence Fe3 + ion sensor with a detection limit of 0.12 μM. Therefore, this work may open a new avenue of conversion of a bio-waste into a fluorescent bio-asset.

  20. Synthesis of biocompatible and highly photoluminescent nitrogen doped carbon dots from lime: Analytical applications and optimization using response surface methodology

    Energy Technology Data Exchange (ETDEWEB)

    Barati, Ali [Faculty of Chemistry, Institute for Advanced Studies in Basic Sciences, Zanjan (Iran, Islamic Republic of); Shamsipur, Mojtaba, E-mail: mshamsipur@yahoo.com [Department of Chemistry, Razi University, Kermanshah (Iran, Islamic Republic of); Arkan, Elham [Nano Drug Delivery Research Center Kermanshah University of Medical Sciences, Kermanshah (Iran, Islamic Republic of); Hosseinzadeh, Leila [Novel Drug Delivery Research Center, Faculty of Pharmacy, Kermanshah University of Medical Sciences, Kermanshah (Iran, Islamic Republic of); Abdollahi, Hamid, E-mail: abd@iasbs.ac.ir [Faculty of Chemistry, Institute for Advanced Studies in Basic Sciences, Zanjan (Iran, Islamic Republic of)

    2015-02-01

    Herein, a facile hydrothermal treatment of lime juice to prepare biocompatible nitrogen-doped carbon quantum dots (N-CQDs) in the presence of ammonium bicarbonate as a nitrogen source has been presented. The resulting N-CQDs exhibited excitation and pH independent emission behavior; with the quantum yield (QY) up to 40%, which was several times greater than the corresponding value for CQDs with no added nitrogen source. The N-CQDs were applied as a fluorescent probe for the sensitive and selective detection of Hg{sup 2+} ions with a detection limit of 14 nM. Moreover, the cellular uptake and cytotoxicity of N-CQDs at different concentration ranges from 0.0 to 0.8 mg/ml were investigated by using PC12 cells as a model system. Response surface methodology was used for optimization and systematic investigation of the main variables that influence the QY, including reaction time, reaction temperature, and ammonium bicarbonate weight. - Highlights: • High fluorescent N-doped CQDs from lime juice have been prepared. • Response surface methodology was used to optimize and model the main factors. • N-doped CQDs were used in the selective and sensitive detection of Hg(II). • The biocompatibility of prepared N-doped CQDs was conformed using PC12 cells.

  1. Immobilization of pH-sensitive CdTe Quantum Dots in a Poly(acrylate) Hydrogel for Microfluidic Applications

    Science.gov (United States)

    Franke, M.; Leubner, S.; Dubavik, A.; George, A.; Savchenko, T.; Pini, C.; Frank, P.; Melnikau, D.; Rakovich, Y.; Gaponik, N.; Eychmüller, A.; Richter, A.

    2017-04-01

    Microfluidic devices present the basis of modern life sciences and chemical information processing. To control the flow and to allow optical readout, a reliable sensor material that can be easily utilized for microfluidic systems is in demand. Here, we present a new optical readout system for pH sensing based on pH sensitive, photoluminescent glutathione capped cadmium telluride quantum dots that are covalently immobilized in a poly(acrylate) hydrogel. For an applicable pH sensing the generated hybrid material is integrated in a microfluidic sensor chip setup. The hybrid material not only allows in situ readout, but also possesses valve properties due to the swelling behavior of the poly(acrylate) hydrogel. In this work, the swelling property of the hybrid material is utilized in a microfluidic valve seat, where a valve opening process is demonstrated by a fluid flow change and in situ monitored by photoluminescence quenching. This discrete photoluminescence detection (ON/OFF) of the fluid flow change (OFF/ON) enables upcoming chemical information processing.

  2. Mapping bound plasmon propagation on a nanoscale stripe waveguide using quantum dots: influence of spacer layer thickness

    Directory of Open Access Journals (Sweden)

    Chamanei S. Perera

    2015-10-01

    Full Text Available In this paper we image the highly confined long range plasmons of a nanoscale metal stripe waveguide using quantum emitters. Plasmons were excited using a highly focused 633 nm laser beam and a specially designed grating structure to provide stronger incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides.

  3. Spectroscopy of size dependent many-particle effects in single self-assembled semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dal Savio, C.

    2006-02-20

    Single InAs quantum dots (QDs) grown with the Stranski-Krastanov method in a In{sub 0.12}Ga{sub 0.88}As quantum well embedded in GaAs and emitting in the near infrared have been optically investigated. To perform QD spectroscopy at low temperatures a very stable micro-photoluminescence ({mu}-PL) microscope set-up fully integrated in a liquid helium (LHe) cryostate has been successfully developed. The system is based on the cold finger technique and a Fourier Transform (FT) spectrometer combined with a nitrogen cooled Ge detector. Photoluminescence of the QDs was excited non resonantly with a He-Ne laser and single dot spectroscopy was carried out at temperatures below 60 K. The experimental set-up allows mapping of the optical emission by recording spectra for every point of a scan grid. This mapping mode is used to acquire optical images and to locate a particular dot for investigation. Series of measurement on a single QD were normally performed over a long time (from a few days to a week), with the need of daily adjustment in the sub-micrometer range. At low excitation power a single sharp line (E{sub x}) arising from recombination of a single exciton in the dot is observed. Varying the excitation density the spectra become more complex, with appearance of the biexciton emission line (E{sub xx}) on the lower energies side of the E{sub x} line, followed by emission from excitons occupying higher shells in the dot. Measured biexciton binding energies and power dependence are in good agreement with values reported in the literature. The temperature dependence of the optical emission was investigated. The energy shows the characteristic decrease related to the shrinking of the semiconductor band gap, while the linewidth evolution is compatible with broadening due to coupling with acoustic and optical phonons. A statistics of biexciton binding energies over a dozen of dots was acquired and the results compared with single QD spectroscopy data available in the

  4. Novel cookie-with-chocolate carbon dots displaying extremely acidophilic high luminescence

    Science.gov (United States)

    Lu, Siyu; Zhao, Xiaohuan; Zhu, Shoujun; Song, Yubin; Yang, Bai

    2014-10-01

    A fluorescent carbon dot with a cookie-with-chocolate film structure (about 5 × 5 μm2) showed a high fluorescence quantum yield (61.12%) at low pH. It was hydrothermally synthesized from l-serine and l-tryptophan. The formation mechanism of the film with carbon dots (CDs) was investigated. The film structure was formed by hydrogen bonding and π-π stacking interactions between aromatic rings. The strong blue fluorescence of the CDs increased under strong acidic conditions owing to the changes in the N-groups. These cookie-like CDs are attractive for their potential use as effective fluorescent probes for the sensitive detection of aqueous H+ and Fe3+.A fluorescent carbon dot with a cookie-with-chocolate film structure (about 5 × 5 μm2) showed a high fluorescence quantum yield (61.12%) at low pH. It was hydrothermally synthesized from l-serine and l-tryptophan. The formation mechanism of the film with carbon dots (CDs) was investigated. The film structure was formed by hydrogen bonding and π-π stacking interactions between aromatic rings. The strong blue fluorescence of the CDs increased under strong acidic conditions owing to the changes in the N-groups. These cookie-like CDs are attractive for their potential use as effective fluorescent probes for the sensitive detection of aqueous H+ and Fe3+. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr03965c

  5. Green synthesis of CuInS2/ZnS core-shell quantum dots by facile solvothermal route with enhanced optical properties

    Science.gov (United States)

    Jindal, Shikha; Giripunje, Sushama M.; Kondawar, Subhash B.; Koinkar, Pankaj

    2018-03-01

    We report an eco-friendly green synthesis of highly luminescent CuInS2/ZnS core-shell quantum dots (QDs) with average particle size ∼ 3.9 nm via solvothermal process. The present study embodies the intensification of CuInS2/ZnS QDs properties by the shell growth on the CuInS2 QDs. The as-prepared CuInS2 core and CuInS2/ZnS core-shell QDs have been characterized using a range of optical and structural techniques. By adopting a low temperature growth of CuInS2 core and high temperature growth of CuInS2/ZnS core-shell growth, the tuning of absorption and photoluminescence emission spectra were observed. Optical absorption and photoluminescence spectroscopy probe the effect of ZnS passivation on the electronic structure of the CuInS2 dots. In addition, QDs have been scrutinized using ultra violet photoelectron spectroscopy (UPS) to explore their electronic band structure. The band level positions of CuInS2 and CuInS2/ZnS QDs suffices the demand of non-toxic acceptor material for electronic devices. The variation in electronic energy levels of CuInS2 core with the coating of wide band gap ZnS shell influence the removal of trap assisted recombination on the surface of the core. QDs exhibited tunable emission from red to orange region. These studies reveal the feasibility of QDs in photovoltaic and light emitting diodes.

  6. InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band

    International Nuclear Information System (INIS)

    Wan, Yating; Li, Qiang; Geng, Yu; Shi, Bei; Lau, Kei May

    2015-01-01

    We report self-assembled InAs/GaAs quantum dots (QDs) grown on a specially engineered GaAs-on-V-grooved-Si substrate by metal-organic vapor phase epitaxy. Recessed pockets formed on V-groove patterned Si (001) substrates were used to prevent most of the hetero-interfacial stacking faults from extending into the upper QD active region. 1.3 μm room temperature emission from high-density (5.6 × 10 10  cm −2 ) QDs has been obtained, with a narrow full-width-at-half-maximum of 29 meV. Optical quality of the QDs was found to be better than those grown on conventional planar offcut Si templates, as indicated by temperature-dependent photoluminescence analysis. Results suggest great potential to integrate QD lasers on a Si complementary-metal-oxide-semiconductor compatible platform using such GaAs on Si templates

  7. Dual-Mode SERS-Fluorescence Immunoassay Using Graphene Quantum Dot Labeling on One-Dimensional Aligned Magnetoplasmonic Nanoparticles.

    Science.gov (United States)

    Zou, Fengming; Zhou, Hongjian; Tan, Tran Van; Kim, Jeonghyo; Koh, Kwangnak; Lee, Jaebeom

    2015-06-10

    A novel dual-mode immunoassay based on surface-enhanced Raman scattering (SERS) and fluorescence was designed using graphene quantum dot (GQD) labels to detect a tuberculosis (TB) antigen, CFP-10, via a newly developed sensing platform of linearly aligned magnetoplasmonic (MagPlas) nanoparticles (NPs). The GQDs were excellent bilabeling materials for simultaneous Raman scattering and photoluminescence (PL). The one-dimensional (1D) alignment of MagPlas NPs simplified the immunoassay process and enabled fast, enhanced signal transduction. With a sandwich-type immunoassay using dual-mode nanoprobes, both SERS signals and fluorescence images were recognized in a highly sensitive and selective manner with a detection limit of 0.0511 pg mL(-1).

  8. The Large-Scale Synthesis of Vinyl-Functionalized Silicon Quantum Dot and Its Application in Miniemulsion Polymerization

    Directory of Open Access Journals (Sweden)

    Xuan-Dung Mai

    2016-01-01

    Full Text Available Stable luminescence, size-tunability, and biocompatibility encourage the deployment of Cd-free NPs into diverse biological applications. Here we report one-pot synthesis of blue-emitting and polymerizable silicon quantum dots (Si QDs from which water-soluble Si QDs embedded polystyrene nanoparticles (SiQD@PS NPs were prepared using a miniemulsion polymerization approach. The hydrodynamic size of NPs was controlled by KOH to oleic acid molar ratio. Studies on the photoluminescence properties of SiQD@PS NPs in different conditions reveal that they exhibit two-photon luminescence property and high stability against pH and UV exposure. These NPs add new size regime to the Si QDs based luminescent makers for bioimaging and therapy applications.

  9. Photo-stability and time-resolved photoluminescence study of colloidal CdSe/ZnS quantum dots passivated in Al{sub 2}O{sub 3} using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Chih-Yi [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Mao, Ming-Hua, E-mail: mhmao@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-08-28

    We report photo-stability enhancement of colloidal CdSe/ZnS quantum dots (QDs) passivated in Al{sub 2}O{sub 3} thin film using the atomic layer deposition (ALD) technique. 62% of the original peak photoluminescence (PL) intensity remained after ALD. The photo-oxidation and photo-induced fluorescence enhancement effects of both the unpassivated and passivated QDs were studied under various conditions, including different excitation sources, power densities, and environment. The unpassivated QDs showed rapid PL degradation under high excitation due to strong photo-oxidation in air while the PL intensity of Al{sub 2}O{sub 3} passivated QDs was found to remain stable. Furthermore, recombination dynamics of the unpassivated and passivated QDs were investigated by time-resolved measurements. The average lifetime of the unpassivated QDs decreases with laser irradiation time due to photo-oxidation. Photo-oxidation creates surface defects which reduces the QD emission intensity and enhances the non-radiative recombination rate. From the comparison of PL decay profiles of the unpassivated and passivated QDs, photo-oxidation-induced surface defects unexpectedly also reduce the radiative recombination rate. The ALD passivation of Al{sub 2}O{sub 3} protects QDs from photo-oxidation and therefore avoids the reduction of radiative recombination rate. Our experimental results demonstrated that passivation of colloidal QDs by ALD is a promising method to well encapsulate QDs to prevent gas permeation and to enhance photo-stability, including the PL intensity and carrier lifetime in air. This is essential for the applications of colloidal QDs in light-emitting devices.

  10. Detection of DNA via the fluorescence quenching of Mn-doped ZnSe D-dots/doxorubicin/DNA ternary complexes system.

    Science.gov (United States)

    Gao, Xue; Niu, Lu; Su, Xingguang

    2012-01-01

    This manuscript reports a method for the detection of double-stranded DNA, based on Mn:ZnSe d-dots and intercalating agent doxorubicin (DOX). DOX can quench the photoluminescence (PL) of Mn:ZnSe d-dots through photoinduced electron transfer process, after binding with Mn:ZnSe d-dots. The addition of DNA can result in the formation of the Mn:ZnSe d-dots-DOX-DNA ternary complexes, the fluorescence of the Mn:ZnSe d-dots-DOX complexes would be further quenched by the addition of DNA, thus allowing the detection of DNA. The formation mechanism of the Mn:ZnSe d-dots-DOX-DNA ternary complexes was studied in detail in this paper. Under optimal conditions, the quenched fluorescence intensity of Mn:ZnSe d-dots-DOX system are perfectly described by Stern-Volmer equation with the concentration of hsDNA ranging from 0.006 μg mL(-1) to 6.4 μg mL(-1). The detection limit (S/N = 3) for hsDNA is 0.5 ng mL(-1). The proposed method was successfully applied to the detection of DNA in synthetic samples and the results were satisfactory.

  11. Structural and physical properties of InAlAs quantum dots grown on GaAs

    Science.gov (United States)

    Vasile, B. S.; Daly, A. Ben; Craciun, D.; Alexandrou, I.; Lazar, S.; Lemaître, A.; Maaref, M. A.; Iacomi, F.; Craciun, V.

    2018-04-01

    Quantum dots (QDs), which have particular physical properties due to the three dimensions confinement effect, could be used in many advanced optoelectronic applications. We investigated the properties of InAlAs/AlGaAs QDs grown by molecular beam epitaxy on GaAs/Al0.5Ga0.5As layers. The optical properties of QDs were studied by low-temperature photoluminescence (PL). Two bandgap transitions corresponding to the X-Sh and X-Ph energy structure were observed. The QDs structure was investigated using high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM). HRXRD investigations showed that the layers grew epitaxially on the substrate, with no relaxation. HRTEM investigations confirmed the epitaxial nature of the grown structures. In addition, it was revealed that the In atoms aggregated in some prismatic regions, forming areas of high In concentration, that were still in perfect registry with the substrate.

  12. Structural Control of InP/ZnS Core/Shell Quantum Dots Enables High-quality White LEDs.

    Science.gov (United States)

    Ganesh Kumar, Baskaran; Sadeghi, Sadra; Melikov, Rustamzhon; Mohammadi Aria, Mohammed; Bahmani Jalali, Houman; Ow-Yang, Cleva; Nizamoglu, Sedat

    2018-05-30

    Herein, we demonstrate that the structural and optical control of InP-based quantum dots can lead to high-performance LEDs. Zinc sulphide (ZnS) shells passivate the InP quantum dot core and increase the quantum yield in green-emitting quantum dots by 13-fold and red-emitting quantum dots by 8-fold. The optimised quantum dots are integrated in the liquid-state to eliminate aggregation induced emission quenching and we fabricated white LEDs with warm, neutral, and cool white appearance by the down-conversion mechanism. The quantum dot-functionalized white LEDs achieve luminous efficiency up to 14.7 lm/W and colour-rendering index up to 80. The structural and optical control of InP/ZnS core/shell quantum dots enable 23-fold enhancement in luminous efficiency of white LEDs compared to ones containing only QDs of InP core. © 2018 IOP Publishing Ltd.

  13. Physicochemical properties of hybrid graphene-lead sulfide quantum dots prepared by supercritical ethanol

    Science.gov (United States)

    Tavakoli, Mohammad Mahdi; Tayyebi, Ahmad; Simchi, Abdolreza; Aashuri, Hossein; Outokesh, Mohmmad; Fan, Zhiyong

    2015-01-01

    Recently, hybrid graphene-quantum dot systems have attracted increasing attention for the next-generation optoelectronic devices such as ultrafast photo-detectors and solar energy harvesting. In this paper, a novel, one-step, reproducible, and solution-processed method is introduced to prepare hybrid graphene-PbS colloids by employing supercritical ethanol. In the hybrid nanocomposite, PbS quantum dots ( 3 nm) are decorated on the reduced graphene oxide (rGO) nanosheets ( 1 nm thickness and less than 1 micron lengths). By employing X-ray photoelectron and Raman and infrared spectroscopy techniques, it is shown that the rGO nanosheets are bonded to PbS nanocrystals through carboxylic bonds. Passivation of {111} planes of PbS quantum dots with rGO nanosheets is demonstrated by employing density function theory. Quenching of the photoluminescence emission of PbS nanocrystals through coupling with graphene sheets is also shown. In order to illustrate that the developed preparation method does not impair the quantum efficiency of the PbS nanocrystals, the photovoltaic efficiency of solar cell device is reported and compared with oleic acid-capped PbS colloidal quantum dot solar cells. By employing the "Hall effect" measurement, it is shown that the carrier mobility is significantly increased (by two orders of magnitudes) in the presence of graphene nanosheets.

  14. Photoluminescence of ultra-high molecular weight polyethylene modified by fast atom bombardment

    International Nuclear Information System (INIS)

    Toth, S.; Fuele, M.; Veres, M.; Pocsik, I.; Koos, M.; Toth, A.; Ujvari, T.; Bertoti, I.

    2006-01-01

    An increase in the application potential of the ultra-high molecular weight polyethylene (UHMWPE) may be achieved by producing a hard, wear resistant carbonaceous modified surface layer on it. In this study the surface of UHMWPE samples was treated by 1 keV N, H and He fast atom bombardment (FAB) to obtain amorphous carbon surface layer which produces an enhancement of microhardness. The untreated and FAB-modified samples were investigated by photoluminescence, infrared, Raman and optical absorption spectroscopy. The FAB-treatment caused a nearly complete disappearance of the characteristic luminescence bands of UHMWPE (at 335, 351, 363 and 381 nm), the appearance of new bands at 459 and 495 nm due to the formation of new recombination levels in the FAB-treated samples. The remarkable decrease in integrated luminescence intensity indicates the appearance of new non-radiative recombination levels caused by FAB treatment. Structural modifications in FAB treated samples result in the development of structural arrangement containing sp 2 bonded carbon sites in rings or chains of different sizes and the electronic levels corresponding to these structural elements are situated in the forbidden gap in the electronic density of states which brings forth the observed changes of the photoluminescence properties

  15. Efficient intranuclear gene delivery by CdSe aqueous quantum dots electrostatically-coated with polyethyleneimine

    International Nuclear Information System (INIS)

    Au, Giang H T; Shih, Wan Y; Shih, Wei-Heng

    2015-01-01

    Quantum dots (QDs) are semiconducting nanoparticles with photoluminescence properties that do not photobleach. Due to these advantages, using QDs for non-viral gene delivery has the additional benefit of being able to track the delivery of the genes in real time as it happens. We investigate the efficacy of mercaptopropionic acid (MPA)-capped CdSe aqueous quantum dots (AQDs) electrostatically complexed with branched polyethyleneimine (PEI) both as a non-viral gene delivery vector and as a fluorescent probe for tracking the delivery of genes into nuclei. The MPA-capped CdSe AQDs that were completely synthesized in water were the model AQDs. A nominal MPA:Cd:Se = 4:3:1 was chosen for optimal photoluminescence and zeta potential. The gene delivery study was carried out in vitro using a human colon cancer cell line, HT29 (ATCC). The model gene was a plasmid DNA (pDNA) that can express red fluorescent protein (RFP). Positively charged branched PEI was employed to provide a proton buffer to the AQDs to allow for endosomal escape. It is shown that by using a PEI-AQD complex with a PEI/AQD molar ratio of 300 and a nominal pDNA/PEI-AQD ratio of 6, we can achieve 75 ± 2.6% RFP expression efficiency with cell vitality remaining at 78 ± 4% of the control. (paper)

  16. Diamond photonic crystal slab: leaky modes and modified photoluminescence emission of surface-deposited quantum dots

    Czech Academy of Sciences Publication Activity Database

    Ondič, Lukáš; Babchenko, Oleg; Varga, Marián; Kromka, Alexander; Čtyroký, Jiří; Pelant, Ivan

    2012-01-01

    Roč. 2, Dec (2012), s. 1-6 ISSN 2045-2322 R&D Projects: GA ČR(CZ) GAP108/11/0794; GA AV ČR(CZ) IAA101120804; GA AV ČR KJB100100903; GA ČR(CZ) GAP205/10/0046 Grant - others:AVČR(CZ) M100100902 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z20670512 Keywords : photonic crystal * diamond * photoluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.927, year: 2012 http://www.nature.com/srep/2012/121203/srep00914/full/srep00914.html

  17. Device Characterization of High Performance Quantum Dot Comb Laser

    KAUST Repository

    Rafi, Kazi

    2012-02-01

    The cost effective comb based laser sources are considered to be one of the prominent emitters used in optical communication (OC) and photonic integrated circuits (PIC). With the rising demand for delivering triple-play services (voice, data and video) in FTTH and FTTP-based WDM-PON networks, metropolitan area network (MAN), and short-reach rack-to-rack optical computer communications, a versatile and cost effective WDM transmitter design is required, where several DFB lasers can be replaced by a cost effective broadband comb laser to support on-chip optical signaling. Therefore, high performance quantum dot (Q.Dot) comb lasers need to satisfy several challenges before real system implementations. These challenges include a high uniform broadband gain spectrum from the active layer, small relative intensity noise with lower bit error rate (BER) and better temperature stability. Thus, such short wavelength comb lasers offering higher bandwidth can be a feasible solution to address these challenges. However, they still require thorough characterization before implementation. In this project, we briefly characterized the novel quantum dot comb laser using duty cycle based electrical injection and temperature variations where we have observed the presence of reduced thermal conductivity in the active layer. This phenomenon is responsible for the degradation of device performance. Hence, different performance trends, such as broadband emission and spectrum stability were studied with pulse and continuous electrical pumping. The tested comb laser is found to be an attractive solution for several applications but requires further experiments in order to be considered for photonic intergraded circuits and to support next generation computer-communications.

  18. CdTe quantum dots functionalized with 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide as luminescent nanoprobe for the sensitive recognition of bromide ion

    International Nuclear Information System (INIS)

    Adegoke, Oluwasesan; Hosten, Eric; McCleland, Cedric; Nyokong, Tebello

    2012-01-01

    Graphical abstract: A bromide ion-selective modified nanoprobe sensor based on 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide (4AT)-functionalized CdTe quantum dots (QDs-4AT) showed a high selectivity and sensitivity for the determination of bromide ion using fluorescence recovery. Highlights: ► Water soluble CdTe quantum dots interact with tetramethylpiperidine-N-oxide. ► Quantum dots fluorescence is quenched by the radical. ► In the presence of bromide ions the fluorescence is restored. ► The sensor is more selective to bromine ions than other common ions. - Abstract: A novel bromide ion-selective modified nanoprobe sensor based on 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide (4AT)-functionalized CdTe quantum dots (QDs-4AT) has been developed. Fluorescence quenching of the QDs by 4AT was observed. The functionalized QDs-4AT nanoprobe allowed a highly sensitive determination of bromide ion via analyte-induced change in the photoluminescence (fluorescence recovery) of the modified QDs. A detection limit of 0.6 nM of bromide ion was obtained, while the interfering effect of other inorganic cations and anions was investigated to examine the selectivity of the nanoprobe. The linear range was between 0.01 and 0.13 μM. Combined fluorescence lifetime and electron paramagnetic resonance measurements confirmed electron transfer processes between bromide ion and QDs-4AT.

  19. Fe(III)-functionalized carbon dots—Highly efficient photoluminescence redox catalyst for hydrogenations of olefins and decomposition of hydrogen peroxide

    KAUST Repository

    Bourlinos, Athanasios B.

    2017-03-21

    We present the first bottom-up approach to synthesize Fe(III)-functionalized carbon dots (CDs) from molecular precursors without the need of conventional thermal or microwave treatment and additional reagents. Specifically, sonication of xylene in the presence of anhydrous FeCl3 results in oxidative coupling of the aromatic substrate towards Fe(III)-functionalized CDs. The as-prepared CDs are spherical in shape with a size of 3–8 nm, highly dispersible in organic solvents and display wavelength-dependent photoluminescence (PL). The iron ions attached to the surface endow the CDs with superior catalytic activity for olefin hydrogenation with excellent conversion and selectivity (up to 100%). The Fe(III)-CDs are more effective in the hydrogenation of a series of electron donating or withdrawing olefin substrates compared to conventional homogeneous or heterogeneous Fe(III)-based catalysts. The as-prepared heterogeneous nanocatalyst can be used repeatedly without any loss of catalytic activity. Importantly, the stability of the new catalysts can be easily monitored by PL intensity or quantum yield measurements, which certainly opens the doors for real time monitoring in a range of applications. Additionally, to the best of our knowledge, for the first time, the oxidative property of Fe-CDs was also explored in decomposition of hydrogen peroxide in water with the first order rate constant of 0.7 × 10−2 min−1, proving the versatile catalytic properties of such hybrid systems.

  20. Fe(III)-functionalized carbon dots—Highly efficient photoluminescence redox catalyst for hydrogenations of olefins and decomposition of hydrogen peroxide

    KAUST Repository

    Bourlinos, Athanasios B.; Rathi, Anuj K.; Gawande, Manoj B.; Hola, Katerina; Goswami, Anandarup; Kalytchuk, Sergii; Karakassides, Michael A.; Kouloumpis, Antonios; Gournis, Dimitrios; Deligiannakis, Yannis; Giannelis, Emmanuel P.; Zboril, Radek

    2017-01-01

    We present the first bottom-up approach to synthesize Fe(III)-functionalized carbon dots (CDs) from molecular precursors without the need of conventional thermal or microwave treatment and additional reagents. Specifically, sonication of xylene in the presence of anhydrous FeCl3 results in oxidative coupling of the aromatic substrate towards Fe(III)-functionalized CDs. The as-prepared CDs are spherical in shape with a size of 3–8 nm, highly dispersible in organic solvents and display wavelength-dependent photoluminescence (PL). The iron ions attached to the surface endow the CDs with superior catalytic activity for olefin hydrogenation with excellent conversion and selectivity (up to 100%). The Fe(III)-CDs are more effective in the hydrogenation of a series of electron donating or withdrawing olefin substrates compared to conventional homogeneous or heterogeneous Fe(III)-based catalysts. The as-prepared heterogeneous nanocatalyst can be used repeatedly without any loss of catalytic activity. Importantly, the stability of the new catalysts can be easily monitored by PL intensity or quantum yield measurements, which certainly opens the doors for real time monitoring in a range of applications. Additionally, to the best of our knowledge, for the first time, the oxidative property of Fe-CDs was also explored in decomposition of hydrogen peroxide in water with the first order rate constant of 0.7 × 10−2 min−1, proving the versatile catalytic properties of such hybrid systems.

  1. Decoherence processes during optical manipulation of excitonic qubits in semiconductor quantum dots

    Science.gov (United States)

    Wang, Q. Q.; Muller, A.; Bianucci, P.; Rossi, E.; Xue, Q. K.; Takagahara, T.; Piermarocchi, C.; MacDonald, A. H.; Shih, C. K.

    2005-07-01

    Using photoluminescence spectroscopy, we have investigated the nature of Rabi oscillation damping during optical manipulation of excitonic qubits in self-assembled quantum dots. Rabi oscillations were recorded by varying the pulse amplitude for fixed pulse durations between 4ps and 10ps . Up to five periods are visible, making it possible to quantify the excitation dependent damping. We find that this damping is more pronounced for shorter pulse widths and show that its origin is the nonresonant excitation of carriers in the wetting layer, most likely involving bound-to-continuum and continuum-to-bound transitions.

  2. SYNTHESIS AND CHARACTERIZATION OF CdSe COLLOIDAL QUANTUM DOTS IN ORGANIC SOLVENT

    Directory of Open Access Journals (Sweden)

    Ion Geru

    2014-06-01

    Full Text Available In this paper we present experimental results on preparation and characterization of colloidal CdSe quantum dots in organic solvent. CdSe QDs were synthesized following a modified literature method. CdSe QDs were isolated by adding acetone to the cooled solution followed by centrifugation. CdSe QDs have been characterized by UV-Vis absorption and photoluminescent (PL spectroscopy. The average CdSe particles size estimated from the UV-Vis absorption spectra was found to be in the range 2.28-2.92 nm which is in good agreement with PL measurements.

  3. InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Oswald, Jiří; Vyskočil, Jan; Kuldová, Karla; Šimeček, Tomislav; Hazdra, P.; Caha, O.

    2010-01-01

    Roč. 312, č. 8 (2010), 1383-1387 ISSN 0022-0248 R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.737, year: 2010

  4. Solution processing of CuSe quantum dots: Photocatalytic activity under RhB for UV and visible-light solar irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kaviyarasu, K., E-mail: kaviyarasuloyolacollege@gmail.com [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology Laboratories, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), Materials Research Department (MSD), iThemba LABS-National Research Foundation - NRF, 1 Old Faure Road, 7129, P O Box 722, Somerset West, Western Cape Province (South Africa); Ayeshamariam, A. [Department of Physics, Khadir Mohideen College, Adirampattinam, Tamil Nadu (India); Research and Development Centre, Bharathiyar University, Coimbatore, Tamil Nadu (India); Manikandan, E. [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology Laboratories, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria (South Africa); Central Research Laboratory, Sree Balaji Medical College & Hospital, Bharath University, Chrompet, Chennai, Tamil Nadu 600044 (India); Kennedy, J. [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology Laboratories, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria (South Africa); National Isotope Centre, GNS Science, PO Box 31312, Lower Hutt 5010 (New Zealand); Ladchumananandasivam, R. [Department of Textile Engineering & Post Graduate Programme in Mechanical Engineering, Centre of Technology, Federal University of the State of Rio Grande do Norte, Campus Universitario, 59078-970 Natal, RN (Brazil); Umbelino Gomes, Uilame [Graduate Program in Materials Science and Engineering, Departamento de Fisica, Universidade Federal do Rio Grande do Norte, 59.072 Natal, RN (Brazil); Jayachandran, M. [Electrochemical Materials Science Division, CSIR-Central Electrochemical Research Institute, Council of Scientific & Industrial Research New Delhi, Karaikudi, 630 006 Tamil Nadu (India); and others

    2016-08-15

    Highlights: • Reflex method generates highly crystalline products with high purity. • Photocatalytic activities are closely related with their surface area. • The average lattice constants are a = 3.96 Å & c = 17.23 Å. • Atomic percentage of Cu and Se elements sample is 54.65 and 45.35. • Stoichiometric atomic percentage of Cu is 33.33% and Se is 66.67%. - Graphical Abstract: - Abstract: Exploit of photodegradation and photocatalytic activity of large scale synthesis of (CuSe) copper selenide semiconductor quantum dots was reported. The obtained nanocrystals were characterized by X-ray diffraction (XRD), UV-visible absorption spectroscopy (UV-vis) photoluminescence (PL) and high resolution transmission electron microscopy (HRTEM). The crystalline, nearly monodisperse with uniform size were synthesized by the reflux condensation method. This method promises a range of possibilities for the preparation of CuSe materials with enhanced properties. Experimental investigation shows the nanoscale photocatalysts with high surface area, small particle size and high crystallinity is of current interest in nanophase materials. The chemical composition of the CuSe samples and the valence states of elements were determined by X-ray photoelectron spectroscopy (XPS). We present our investigations to the shape and size of the quantum dots and are good agreement with experimental results.

  5. Graphitic Nitrogen Triggers Red Fluorescence in Carbon Dots.

    Science.gov (United States)

    Holá, Kateřina; Sudolská, Mária; Kalytchuk, Sergii; Nachtigallová, Dana; Rogach, Andrey L; Otyepka, Michal; Zbořil, Radek

    2017-12-26

    Carbon dots (CDs) are a stable and highly biocompatible fluorescent material offering great application potential in cell labeling, optical imaging, LED diodes, and optoelectronic technologies. Because their emission wavelengths provide the best tissue penetration, red-emitting CDs are of particular interest for applications in biomedical technologies. Current synthetic strategies enabling red-shifted emission include increasing the CD particle size (sp 2 domain) by a proper synthetic strategy and tuning the surface chemistry of CDs with suitable functional groups (e.g., carboxyl). Here we present an elegant route for preparing full-color CDs with well-controllable fluorescence at blue, green, yellow, or red wavelengths. The two-step procedure involves the synthesis of a full-color-emitting mixture of CDs from citric acid and urea in formamide followed by separation of the individual fluorescent fractions by column chromatography based on differences in CD charge. Red-emitting CDs, which had the most negative charge, were separated as the last fraction. The trend in the separation, surface charge, and red-shift of photoluminescence was caused by increasing amount of graphitic nitrogen in the CD structure, as was clearly proved by XPS, FT-IR, Raman spectroscopy, and DFT calculations. Importantly, graphitic nitrogen generates midgap states within the HOMO-LUMO gap of the undoped systems, resulting in significantly red-shifted light absorption that in turn gives rise to fluorescence at the low-energy end of the visible spectrum. The presented findings identify graphitic nitrogen as another crucial factor that can red-shift the CD photoluminescence.

  6. Synthesis of Nitrogen and Sulfur Co-doped Carbon Dots from Garlic for Selective Detection of Fe3+

    Science.gov (United States)

    Sun, Chun; Zhang, Yu; Wang, Peng; Yang, Yue; Wang, Yu; Xu, Jian; Wang, Yiding; Yu, William W.

    2016-02-01

    Garlic was used as a green source to synthesize carbon dots (CDs) with a systematic study of the optical and structure properties. Ethylenediamine was added into the synthesis to improve the photoluminescence quantum yield (PL QY) of the CDs. Detailed structural and composition studies demonstrated that the content of N and the formation of C-N and C=N were critical to improve the PL QY. The as-synthesized CDs exhibited excellent stability in a wide pH range and high NaCl concentrations, rendering them applicable in complicated and harsh conditions. Quenching the fluorescence of the CDs in the presence of Fe3+ ion made these CDs a luminescent probe for selective detection of Fe3+ ion.

  7. InP/ZnSe/ZnS core-multishell quantum dots for improved luminescence efficiency

    Science.gov (United States)

    Greco, Tonino; Ippen, Christian; Wedel, Armin

    2012-04-01

    Semiconductor quantum dots (QDs) exhibit unique optical properties like size-tunable emission color, narrow emission peak, and high luminescence efficiency. QDs are therefore investigated towards their application in light-emitting devices (QLEDs), solar cells, and for bio-imaging purposes. In most cases QDs made from cadmium compounds like CdS, CdSe or CdTe are studied because of their facile and reliable synthesis. However, due to the toxicity of Cd compounds and the corresponding regulation (e.g. RoHS directive in Europe) these materials are not feasible for customer applications. Indium phosphide is considered to be the most promising alternative because of the similar band gap (InP 1.35 eV, CdSe 1.73 eV). InP QDs do not yet reach the quality of CdSe QDs, especially in terms of photoluminescence quantum yield and peak width. Typically, QDs are coated with another semiconductor material of wider band gap, often ZnS, to passivate surface defects and thus improve luminescence efficiency. Concerning CdSe QDs, multishell coatings like CdSe/CdS/ZnS or CdSe/ZnSe/ZnS have been shown to be advantageous due to the improved compatibility of lattice constants. Here we present a method to improve the luminescence efficiency of InP QDs by coating a ZnSe/ZnS multishell instead of a ZnS single shell. ZnSe exhibits an intermediate lattice constant of 5.67 Å between those of InP (5.87 Å) and ZnS (5.41 Å) and thus acts as a wetting layer. As a result, InP/ZnSe/ZnS is introduced as a new core-shell quantum dot material which shows improved photoluminescence quantum yield (up to 75 %) compared to the conventional InP/ZnS system.

  8. Synthesis and characterization of graphene quantum dots and their size reduction using swift heavy ion beam

    Science.gov (United States)

    Mishra, Praveen; Bhat, Badekai Ramchandra

    2018-04-01

    Graphene quantum dots (GQDs) are nanosized fragments of graphene displaying quantum confinement effect. They have shown to be prepared from various methods which include ion beam etching of graphene. However, recently the modification of the GQDs has garnered tremendous attention owing to its suitability for various applications. Here, we have studied the effect of swift ion beam irradiation on the properties of GQDs. The ion beam treatment on the GQDs exhibited the change in observed photoluminescence of GQDs as they exhibited a blue luminescence on excitation with longwave UV (≈365 nm) due to the reduction in size and removal of the ethoxy (-C-O-C-) groups present on the quantum dots. This was confirmed by transmission electron microscopy, particle size analysis, and Fourier transform infrared spectroscopy.

  9. Surface plasmon inhibited photo-luminescence activation in CdSe/ZnS core-shell quantum dots

    Czech Academy of Sciences Publication Activity Database

    Chen, J.; Žídek, Karel; Abdellah, M.; Al-Marri, M.J.; Zheng, K.; Pullerits, T.

    2016-01-01

    Roč. 28, č. 25 (2016), č. článku 254001. ISSN 0953-8984 Institutional support: RVO:61389021 Keywords : surface plasmon * gold nanorods * quantum dots * energy transfer * photoactivation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.649, year: 2016 http://dx.doi.org/10.1088/0953-8984/28/25/254001

  10. Photoluminescence of Diamondoid Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Clay, William; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Sasagawa, Takao; Iwasa, Akio; /TIT, Nagatsuta; Liu, Zhi; /LBNL, ALS; Dahl, Jeremy E.; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Carlson, Robert M.K.; /Molecular Diamond Technologies, Chevron Technology Ventures; Kelly, Michael; Melos, Nicholas; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Shen, Zhi-Xun; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab. /SIMES, Stanford

    2012-04-03

    The photoluminescence of diamondoids in the solid state is examined. All of the diamondoids are found to photoluminesce readily with initial excitation wavelengths ranging from 233 nm to 240 nm (5.3 eV). These excitation energies are more than 1 eV lower than any previously studied saturated hydrocarbon material. The emission is found to be heavily shifted from the absorption, with emission wavelengths of roughly 295 nm (4.2 eV) in all cases. In the dissolved state, however, no uorescence is observed for excitation wavelengths as short as 200 nm. We also discuss predictions and measurements of the quantum yield. Our predictions indicate that the maximum yield may be as high as 25%. Our measurement of one species, diamantane, gives a yield of 11%, the highest ever reported for a saturated hydrocarbon, even though it was likely not at the optimal excitation wavelength.

  11. Formation and photoluminescence of "Cauliflower" silicon nanoparticles

    NARCIS (Netherlands)

    Tang, W.; Eilers, J.J.; Huis, van M.A.; Wang, D.; Schropp, R.E.I.; Vece, Di M.

    2015-01-01

    The technological advantages of silicon make silicon nanoparticles, which can be used as quantum dots in a tandem configuration, highly relevant for photovoltaics. However, producing a silicon quantum dot solar cell structure remains a challenge. Here we use a gas aggregation cluster source to

  12. Aptamer and 5-fluorouracil dual-loading Ag2S quantum dots used as a sensitive label-free probe for near-infrared photoluminescence turn-on detection of CA125 antigen.

    Science.gov (United States)

    Jin, Hui; Gui, Rijun; Gong, Jun; Huang, Wenxue

    2017-06-15

    In this article, Ag 2 S quantum dots (QDs) were prepared by a facile aqueous synthesis method, using thiourea as a new sulfur precursor. Based on electrostatic interactions, 5-fluorouracil (5-Fu) was combined with the aptamer of CA125 antigen to fabricate aptamer/5-Fu complex. The surface of as-prepared Ag 2 S QDs was modified with polyethylenimine, followed by combination with the aptamer/5-Fu complex to form Ag 2 S QDs/aptamer/5-Fu hybrids. During the combination of Ag 2 S QDs with aptamer/5-Fu complex, near-infrared (NIR) photoluminescence (PL) of QDs (peaked at 850nm) was markedly reduced under excitation at 625nm, attributed to photo-induced electron transfer from QDs to 5-Fu. However, the addition of CA125 induced obvious NIR PL recovery, which was ascribed to the strong binding affinity of CA125 with its aptamer, and the separation of aptamer/5-Fu complex from the surface of QDs. Hence, the Ag 2 S QDs/aptamer/5-Fu hybrids were developed as a novel NIR PL turn-on probe of CA125. In the concentration range of [CA125] from 0.1 to 10 6 ngmL -1 , there were a good linear relationship between NIR PL intensities of Ag 2 S QDs and Log[CA125], and a low limit of detection of 0.07ngmL -1 . Experimental results revealed the highly selective and sensitive NIR PL responses of this probe to CA125, over other potential interferences. In real human body fluids, this probe also exhibited superior analytical performance, together with high detection recoveries. Copyright © 2016 Elsevier B.V. All rights reserved.

  13. Viscoelastic wormlike micelles formed by ionic liquid-type surfactant [C16imC8]Br towards template-assisted synthesis of CdS quantum dots.

    Science.gov (United States)

    Hu, Yimin; Han, Jie; Ge, Lingling; Guo, Rong

    2018-01-31

    In this paper, viscoelastic wormlike micelles consisting of cationic liquid-type surfactant, 1-hexadecyl-3-octyl imidazolium bromide ([C 16 imC 8 ]Br), water and different additives were utilized for the synthesis of CdS quantum dots. First, the influence of different additives, such as [Cd(NH 3 ) 6 ]Cl 2 and ethanethioamid (precursors for the synthesis of CdS quantum dots), and temperature on the viscoelasticity of the [C 16 imC 8 ]Br aqueous solution was studied by dynamic and steady rheology. Furthermore, the synthesized CdS quantum dots and their photoluminescence properties were characterized by transmission electron microscopy (TEM), UV-Vis absorption spectroscopy, X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDX). In the end, the mechanism for the synthesis of CdS quantum dots in [C 16 imC 8 ]Br wormlike micelles is proposed.

  14. Fluorescent carbon quantum dot hydrogels for direct determination of silver ions.

    Science.gov (United States)

    Cayuela, A; Soriano, M L; Kennedy, S R; Steed, J W; Valcárcel, M

    2016-05-01

    The paper reports for the first time the direct determination of silver ion (Ag(+)) using luminescent Carbon Quantum Dot hydrogels (CQDGs). Carbon Quantum Dots (CQDs) with different superficial moieties (passivate-CQDs with carboxylic groups, thiol-CQDs and amine-CQDs) were used to prepare hybrid gels using a low molecular weight hydrogelator (LMWG). The use of the gels results in considerable fluorescence enhancement and also markedly influences selectivity. The most selective CQDG system for Ag(+) ion detection proved to be those containing carboxylic groups onto their surface. The selectivity towards Ag(+) ions is possibly due to its flexible coordination sphere compared with other metal ions. This fluorescent sensing platform is based on the strong Ag-O interaction which can quench the photoluminescence of passivate-CQDs (p-CQDs) through charge transfer. The limit of detection (LOD) and quantification (LOQ) of the proposed method were 0.55 and 1.83µgmL(-1), respectively, being applied in river water samples. Copyright © 2016 Elsevier B.V. All rights reserved.

  15. Exceeding Conventional Photovoltaic Efficiency Limits Using Colloidal Quantum Dots

    Science.gov (United States)

    Pach, Gregory F.

    Colloidal quantum dots (QDs) are a widely investigated field of research due to their highly tunable nature in which the optical and electronic properties of the nanocrystal can be manipulated by merely changing the nanocrystal's size. Specifically, colloidal quantum dot solar cells (QDSCs) have become a promising candidate for future generation photovoltaic technology. Quantum dots exhibit multiple exciton generation (MEG) in which multiple electron-hole pairs are generated from a single high-energy photon. This process is not observed in bulk-like semiconductors and allows for QDSCs to achieve theoretical efficiency limits above the standard single-junction Shockley-Queisser limit. However, the fast expanding field of QDSC research has lacked standardization of synthetic techniques and device design. Therefore, we sought to detail methodology for synthesizing PbS and PbSe QDs as well as photovoltaic device fabrication techniques as a fast track toward constructing high-performance solar cells. We show that these protocols lead toward consistently achieving efficiencies above 8% for PbS QDSCs. Using the same methodology for building single-junction photovoltaic devices, we incorporated PbS QDs as a bottom cell into a monolithic tandem architecture along with solution-processed CdTe nanocrystals. Modeling shows that near-peak tandem device efficiencies can be achieved across a wide range of bottom cell band gaps, and therefore the highly tunable band gap of lead-chalcogenide QDs lends well towards a bottom cell in a tandem architecture. A fully functioning monolithic tandem device is realized through the development of a ZnTe/ZnO recombination layer that appropriately combines the two subcells in series. Multiple recent reports have shown nanocrystalline heterostructures to undergo the MEG process more efficiency than several other nanostrucutres, namely lead-chalcogenide QDs. The final section of my thesis expands upon a recent publication by Zhang et. al., which

  16. Green synthesis of sulfur- and nitrogen-co-doped carbon dots using ionic liquid as a precursor and their application in Hg2+ detection

    International Nuclear Information System (INIS)

    Zhuo, Kelei; Sun, Dong; Xu, Panpan; Wang, Chunfeng; Cao, Yingying; Chen, Yujuan; Liu, Jianming

    2017-01-01

    A facile and environment-friendly method was developed to synthesize sulfur- and nitrogen-co-doped carbon dots (S/N-CDs) via one step hydrothermal treatment of 1-butyl-3-methylimidazolium 2-amino-3-mercaptopropionic acid salt ionic liquid and polyethylene glycol. It was found that the prepared S/N-CDs were nearly spherical nanoparticles. And then the size of the as-prepared S/N-CDs became smaller with the extension of reaction time, the amorphous carbon was gradually transformed into a crystal structure of carbon dots and a higher reaction temperature favors the formation of carbon dots with higher quantum yields. It was also found that sulfur atoms in the S/N-CDs change the surface structures of CDs to some extent. Higher quantum yield of the S/N-CDs should attribute to the synergistic effect of co-doped nitrogen and sulfur atoms. The S/N-CDs display stable and strong florescence, high water solubility, excitation-dependent emission behavior, particularly the up-conversion photoluminescence performance. Furthermore, the as-prepared S/N-CDs were used as a sensitive probe for Hg 2+ detection in aqueous solutions, with high selectivity and sensitivity. Particularly, the detection limit could reach as low as 0.6 nM (S/N=3).

  17. High-resolution photocurrent microscopy using near-field cathodoluminescence of quantum dots

    Directory of Open Access Journals (Sweden)

    Heayoung P. Yoon

    2013-06-01

    Full Text Available We report a fast, versatile photocurrent imaging technique to visualize the local photo response of solar energy devices and optoelectronics using near-field cathodoluminescence (CL from a homogeneous quantum dot layer. This approach is quantitatively compared with direct measurements of high-resolution Electron Beam Induced Current (EBIC using a thin film solar cell (n-CdS / p-CdTe. Qualitatively, the observed image contrast is similar, showing strong enhancement of the carrier collection efficiency at the p-n junction and near the grain boundaries. The spatial resolution of the new technique, termed Q-EBIC (EBIC using quantum dots, is determined by the absorption depth of photons. The results demonstrate a new method for high-resolution, sub-wavelength photocurrent imaging measurement relevant for a wide range of applications.

  18. Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites.

    Science.gov (United States)

    Stoddard, Ryan J; Eickemeyer, Felix T; Katahara, John K; Hillhouse, Hugh W

    2017-07-20

    High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83 Cs 0.17 Pb(I 0.66 Br 0.34 ) 3 , resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.

  19. Chemical Structure, Ensemble and Single-Particle Spectroscopy of Thick-Shell InP-ZnSe Quantum Dots.

    Science.gov (United States)

    Reid, Kemar R; McBride, James R; Freymeyer, Nathaniel J; Thal, Lucas B; Rosenthal, Sandra J

    2018-02-14

    Thick-shell (>5 nm) InP-ZnSe colloidal quantum dots (QDs) grown by a continuous-injection shell growth process are reported. The growth of a thick crystalline shell is attributed to the high temperature of the growth process and the relatively low lattice mismatch between the InP core and ZnSe shell. In addition to a narrow ensemble photoluminescence (PL) line-width (∼40 nm), ensemble and single-particle emission dynamics measurements indicate that blinking and Auger recombination are reduced in these heterostructures. More specifically, high single-dot ON-times (>95%) were obtained for the core-shell QDs, and measured ensemble biexciton lifetimes, τ 2x ∼ 540 ps, represent a 7-fold increase compared to InP-ZnS QDs. Further, high-resolution energy dispersive X-ray (EDX) chemical maps directly show for the first time significant incorporation of indium into the shell of the InP-ZnSe QDs. Examination of the atomic structure of the thick-shell QDs by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) reveals structural defects in subpopulations of particles that may mitigate PL efficiencies (∼40% in ensemble), providing insight toward further synthetic refinement. These InP-ZnSe heterostructures represent progress toward fully cadmium-free QDs with superior photophysical properties important in biological labeling and other emission-based technologies.

  20. Optical and structural properties of ensembles of colloidal Ag2S quantum dots in gelatin

    International Nuclear Information System (INIS)

    Ovchinnikov, O. V.; Smirnov, M. S.; Shapiro, B. I.; Shatskikh, T. S.; Perepelitsa, A. S.; Korolev, N. V.

    2015-01-01

    The size dependences of the absorption and luminescence spectra of ensembles of hydrophilic colloidal Ag 2 S quantum dots produced by the sol-gel method and dispersed in gelatin are analyzed. By X-ray diffraction analysis and transmission electron microscopy, the formation of core/shell nanoparticles is detected. The characteristic feature of the nanoparticles is the formation of crystalline cores, 1.5–2.0 nm in dimensions, and shells of gelatin and its complexes with the components of synthesis. The observed slight size dependence of the position of infrared photoluminescence bands (in the range 1000–1400 nm) in the ensembles of hydrophilic colloidal Ag 2 S quantum dots is explained within the context of the model of the radiative recombination of electrons localized at structural and impurity defects with free holes

  1. High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

    OpenAIRE

    Carolin M. Sutter-Fella Yanbo Li Matin Amani Joel W. Ager III Francesca M. Toma; Eli Yablonovitch Ian D. Sharp and Ali Javey

    2016-01-01

    Hybrid organic–inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low cost solution processability. Here we present a two step low pressure vapor assisted solution process to grow high quality homogeneous CH3NH3PbI3–xBrx perovskite films over the full band gap range of 1.6–2.3 eV. Photoluminescence light in versus light out charac...

  2. Synthesis of quantum dots

    Science.gov (United States)

    McDaniel, Hunter

    2017-10-17

    Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

  3. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    International Nuclear Information System (INIS)

    Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

    2010-01-01

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  4. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2010-02-15

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  5. Suppressed Blinking and Auger Recombination in Near-Infrared Type-II InP/CdS Nanocrystal Quantum Dots

    Science.gov (United States)

    Dennis, Allison M.; Mangum, Benjamin D.; Piryatinski, Andrei; Park, Young-Shin; Hannah, Daniel C.; Casson, Joanna L.; Williams, Darrick J.; Schaller, Richard D.; Htoon, Han; Hollingsworth, Jennifer A.

    2012-01-01

    Non-blinking excitonic emission from near-infrared and type-II nanocrystal quantum dots (NQDs) is reported for the first time. To realize this unusual degree of stability at the single-dot level, novel InP/CdS core/shell NQDs were synthesized for a range of shell thicknesses (~1–11 monolayers of CdS). Ensemble spectroscopy measurements (photoluminescence peak position and radiative lifetimes) and electronic structure calculations established the transition from type-I to type-II band alignment in these heterostructured NQDs. More significantly, single-NQD studies revealed clear evidence for blinking suppression that was not strongly shell-thickness dependent, while photobleaching and biexciton lifetimes trended explicitly with extent of shelling. Specifically, very long biexciton lifetimes—up to >7 ns—were obtained for the thickest-shell structures, indicating dramatic suppression of non-radiative Auger recombination. This new system demonstrates that electronic structure and shell thickness can be employed together to effect control over key single-dot and ensemble NQD photophysical properties. PMID:23030497

  6. Mn-doped near-infrared quantum dots as multimodal targeted probes for pancreatic cancer imaging

    Science.gov (United States)

    Yong, Ken-Tye

    2009-01-01

    This work presents a novel approach to producing manganese (Mn)-doped quantum dots (Mnd-QDs) emitting in the near-infrared (NIR). Surface functionalization of Mnd-QDs with lysine makes them stably disperse in aqueous media and able to conjugate with targeting molecules. The nanoparticles were structurally and compositionally characterized and maintained a high photoluminescence quantum yield and displayed paramagnetism in water. The receptor-mediated delivery of bioconjugated Mnd-QDs into pancreatic cancer cells was demonstrated using the confocal microscopy technique. Cytotoxicity of Mnd-QDs on live cells has been evaluated. The NIR-emitting characteristic of the QDs has been exploited to acquire whole animal body imaging with high contrast signals. In addition, histological and blood analysis of mice have revealed that no long-term toxic effects arise from MnD-QDs. These studies suggest multimodal Mnd-QDs have the potentials as probes for early pancreatic cancer imaging and detection.

  7. Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2016-01-01

    Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

  8. A fast bottom-up route for preparing CdS quantum dots using laser ablation in a liquid environment

    Energy Technology Data Exchange (ETDEWEB)

    Mendonça, Leonardo T.B; Azevedo, Walter M. de, E-mail: wma@ufpe.br

    2016-03-15

    In this paper bright, water-dispersible and very stable CdS quantum dots (QDs) emitting from 400 to 700 nm with a narrow size distribution were synthesized in aqueous medium using a combination of the laser ablation technique and the action of thioglycerol as a catalyst for the hydrolysis of thiosulfate and as a stabilizing agent for the nanoparticles. In this case, instead of using a conventional, highly toxic sulfur source like H{sub 2}S, the decomposition of thiosulfate catalyzed by thioglycerol is used to produce S{sup 2−} ions that interact with Cd{sup 2+} ions produced by the ablation of a Cd foil by the second order light of a pulsed Nd:YAG laser. The ejected Cd{sup 2+} ions react with S{sup 2−} to form CdS quantum dots. Spectroscopic, X-ray and TEM measurement analysis showed that 2.75 nm monodisperse CdS QDots were synthesized and exhibited bright photoluminescence in the yellow-orange region of the spectra when excited with 355 nm with a quantum yield of 3.25%.

  9. Nongeminate radiative recombination of free charges in cation-exchanged PbS quantum dot films

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, Ashley R. [National Renewable Energy Laboratory, 15013 Denver West Pkwy., Golden, CO 80401 (United States); Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309 (United States); Beard, Matthew C.; Johnson, Justin C. [National Renewable Energy Laboratory, 15013 Denver West Pkwy., Golden, CO 80401 (United States)

    2016-06-01

    Highlights: • Photoluminescence and transient absorption are used to probe PbS QD films. • Cation-exchanged PbS QDs show room-temperature PL emission. • Bimolecular recombination is shown for the first time in coupled, PbS QD films. - Abstract: Using photoluminescence (PL) spectroscopy we explore the radiative recombination pathways in PbS quantum dots (QDs) synthesized by two methods. We compare conventionally synthesized PbS from a PbO precursor to PbS synthesized using cation-exchange from CdS QDs. We show that strongly coupled films of PbS QDs from the cation-exchange luminesce with significant efficiency at room temperature. This is in stark contrast to conventional PbS QDs, which have exceedingly weak room temperature emission. Moreover, the power dependence of the emission is quadratic, indicating bimolecular radiative recombination that is reasonably competitive with trap-assisted recombination, a feature previously unreported in coupled PbS QD films. We interpret these results in terms of a greatly reduced defect concentration for cation-exchanged QDs that mitigates the influence of trap-assisted recombination. Cation-exchanged QDs have recently been employed in highly efficient and air-stable lead chalcogenide QD devices, and the reduced number of trap states inferred here may lead to improved current collection and higher open circuit voltage.

  10. Comparison of in situ ionizing radiation effects on Raman and photoluminescence intensity of high OH, low OH silica, and fluoride core fibers

    Science.gov (United States)

    Bilodeau, T. G.; Ewing, K. J.; Nau, G. M.; Aggarwal, I. D.

    1995-06-01

    An in situ study of the effects of ionizing radiation on the strength of the Raman and photoluminescence signal of high OH, low OH, and fluoride core fibers has been performed with 514.5 nm laser excitation. The fibers were irradiated with a 60Co source at a constant dose rate of 560 rads/h. The high OH fiber displayed a much slower decay of the fiber Raman intensity than the other two fibers during irradiation. The fluoride fiber exhibited the quickest decline in Raman signal with the intensity dropping by a factor of 1000 in less than 20 min. The Raman intensity of the low OH silica fiber recovered to greater than 90% of its pre-irradiation value after a post-irradiation photoanneal with 488 nm laser light. The silica fibers displayed an increase in intensity of a broad photoluminescence feature centered at 650 nm. However the fiber photoluminescence intensity remained much weaker than the Raman intensity throughout the irradiations.

  11. The effect of Pb addition on the morphology of CdSe quantum dot

    Science.gov (United States)

    Kim, Young-Kuk; Cho, Young-Sang; Chung, Kookchae; Choi, Chul-Jin

    2010-08-01

    CdSe quantum dots had been synthesized with a hot injection method. It was shown that the addition of Pb ions in the initial precursor solution changed the morphology of CdSe nanocrystals from slightly prolate ellipsoid to branched rod. Photoluminescence (PL) of the branched nanocrystals showed rapid depression of emission intensity due to the morphological development to the branched nanocrystal induced by Pb addition. Low temperature PL spectrum indicated that the surface recombination of charge carrier resulted in the large depression of emission from the branched nanocrystal.

  12. Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

    2010-01-01

    We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

  13. Highly sensitive detection of ionizing radiations by a photoluminescent uranyl organic framework

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Jian; Wang, Yaxing; Liu, Wei; Yin, Xuemiao; Chen, Lanhua; Diwu, Juan; Chai, Zhifang; Wang, Shuao [School for Radiological and interdisciplinary Sciences (RAD-X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, Soochow University, Suzhou (China); Zou, Youming [High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui (China); Albrecht-Schmitt, Thomas E. [Department of Chemistry and Biochemistry, Florida State University, Tallahassee, FL (United States); Liu, Guokui [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL (United States)

    2017-06-19

    Precise detection of low-dose X- and γ-radiations remains a challenge and is particularly important for studying biological effects under low-dose ionizing radiation, safety control in medical radiation treatment, survey of environmental radiation background, and monitoring cosmic radiations. We report here a photoluminescent uranium organic framework, whose photoluminescence intensity can be accurately correlated with the exposure dose of X- or γ-radiations. This allows for precise and instant detection of ionizing radiations down to the level of 10{sup -4} Gy, representing a significant improvement on the detection limit of approximately two orders of magnitude, compared to other chemical dosimeters reported up to now. The electron paramagnetic resonance analysis suggests that with the exposure to radiations, the carbonyl double bonds break affording oxo-radicals that can be stabilized within the conjugated uranium oxalate-carboxylate sheet. This gives rise to a substantially enhanced equatorial bonding of the uranyl(VI) ions as elucidated by the single-crystal structure of the γ-ray irradiated material, and subsequently leads to a very effective photoluminescence quenching through phonon-assisted relaxation. The quenched sample can be easily recovered by heating, enabling recycled detection for multiple runs. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. One-step preparation of long-term stable and flexible CsPbBr3 perovskite quantum dots/ethylene vinyl acetate copolymer composite films for white LEDs.

    Science.gov (United States)

    Li, Yang; Lv, Ying; Guo, Ziquan; Dong, Liubing; Zheng, Jianghui; Chai, Chufen; Chen, Nan; Lu, Yijun; Chen, Chao

    2018-04-19

    CsPbBr3 perovskite quantum dots (PQDs)/ethylene vinyl acetate (EVA) composite films were prepared via a one-step method, based on that both supersaturated recrystallization of CsPbBr3 PQDs and dissolution of EVA were realized in toluene. The prepared films display outstanding green emitting performance with high color purity of 92% and photoluminescence quantum yield of 40.5% at appropriate CsPbBr3 PQD loading. They possess long-term stable luminescent properties in the air and in water, benefiting from the effective protection of CsPbBr3 PQDs by EVA matrix. Besides, the prepared CsPbBr3 PQDs/EVA films are flexible enough to be repeatedly bent for 1000 cycles while keeping unchanged photoluminescence intensity. Optical properties of the CsPbBr3 PQDs/EVA films in white LEDs were also studied by experiments and theoretical simulation. Overall, facile preparation process, good long-term stability and high flexibility allow our green-emitting CsPbBr3 PQDs/EVA films to be applied in lighting applications and flexible displays.

  15. Electronic structure of self-organized InAs/GaAs quantum dots bounded by {136} facets

    International Nuclear Information System (INIS)

    Yang, Weidong; Lee, Hao; Johnson, Thomas J.; Sercel, Peter C.; Norman, A. G.

    2000-01-01

    Recent experiments indicate that the shape of self-organized InAs quantum dots grown on GaAs [001] is an elongated pyramid with bounding facets corresponding to a family of four {136} planes. This structure, which possesses C 2v symmetry, is quite different from square-base pyramidal or lens geometries, which have been assumed in previous electronic structure calculations for this system. In this paper, we consider theoretically the influence of the {136} shape on the electronic structure and optical properties of the quantum dots. We present a valence force-field calculation of the inhomogeneous strain and incorporate the results into an eight band k(vector sign)·p(vector sign) electronic structure calculation. The size dependence of the electronic structure is calculated and compared to experimental photoluminescence spectra. The effects of perturbations on the {136} shape are also considered. Calculations based on the {136} shape give good agreement with the observed level structure and optical polarization properties of self-organized InAs/GaAs quantum dots. (c) 2000 The American Physical Society

  16. Hybrid structures based on gold nanoparticles and semiconductor quantum dots for biosensor applications

    Directory of Open Access Journals (Sweden)

    Kurochkina M

    2018-04-01

    Full Text Available Margarita Kurochkina,1 Elena Konshina,1 Aleksandr Oseev,2 Soeren Hirsch3 1Centre of Information Optical Technologies, ITMO University, Saint Petersburg, Russia; 2Institute of Micro and Sensor Systems, Otto-von-Guericke-University Magdeburg, Magdeburg, Germany; 3Department of Engineering, University of Applied Sciences Brandenburg, Brandenburg an der Havel, Germany Background: The luminescence amplification of semiconductor quantum dots (QD in the presence of self-assembled gold nanoparticles (Au NPs is one of way for creating biosensors with highly efficient transduction. Aims: The objective of this study was to fabricate the hybrid structures based on semiconductor CdSe/ZnS QDs and Au NP arrays and to use them as biosensors of protein. Methods: In this paper, the hybrid structures based on CdSe/ZnS QDs and Au NP arrays were fabricated using spin coating processes. Au NP arrays deposited on a glass wafer were investigated by optical microscopy and absorption spectroscopy depending on numbers of spin coating layers and their baking temperature. Bovine serum albumin (BSA was used as the target protein analyte in a phosphate buffer. A confocal laser scanning microscope was used to study the luminescent properties of Au NP/QD hybrid structures and to test BSA. Results: The dimensions of Au NP aggregates increased and the space between them decreased with increasing processing temperature. At the same time, a blue shift of the plasmon resonance peak in the absorption spectra of Au NP arrays was observed. The deposition of CdSe/ZnS QDs with a core diameter of 5 nm on the surface of the Au NP arrays caused an increase in absorption and a red shift of the plasmon peak in the spectra. The exciton–plasmon enhancement of the QDs’ photoluminescence intensity has been obtained at room temperature for hybrid structures with Au NPs array pretreated at temperatures of 100°C and 150°C. It has been found that an increase in the weight content of BSA

  17. Facile synthesis of carbon dots with superior sensing ability

    Science.gov (United States)

    Jin, Lin; Li, Jingguo; Liu, Liyun; Wang, Zhenling; Zhang, Xingcai

    2018-04-01

    Carbon dots (CDs) have various applications in biomedical and environmental field, such as bio-imaging, bio-sensing and heavy metal detection. In this study, a novel class of CDs were synthesized using a one-step hydrothermal method. The fabricated CDs displayed stable photoluminescence, good water solubility, and photo stability. Moreover, the functional groups (carboxylic acid moieties and hydroxyls) on the surface of the obtained CDs enable it with superior sensing ability (e.g., very low detectable concentration for Pb2+: 5 nmol/L). With superior detection sensitivity, excellent fluorescent properties and facile fabrication method, the as-obtained CDs can find practical applications as cost-effective and sensitive chemo-sensors in water and food safety field.

  18. Economical and green synthesis of bagasse-derived fluorescent carbon dots for biomedical applications

    International Nuclear Information System (INIS)

    Du, Fengyi; Zhang, Miaomiao; Li, Xiaofeng; Jiang, Xinyi; Li, Zhang; Hua, Ye; Shao, Genbao; Jin, Jie; Shao, Qixiang; Gong, Aihua; Li, Jianan; Zhou, Ming

    2014-01-01

    Carbon quantum dots (CDs) are promising nanomaterials in biomedical, photocatalytical and photoelectronic applications. However, determining how to explore an ideal precursor for a renewable carbon resource is still an interesting challenge. Here, for the first time, we report that renewable wastes of bagasse as a new precursor were prepared for fluorescent CDs by a hydrothermal carbonization (HTC) process. The characterization results show that such bagasse-derived CDs are monodispersed, contain quasi spherical particles with a diameter of about 1.8 nm and exhibit favorable photoluminescence properties, super-high photostability and good dispersibility in water. Most importantly, bagasse-derived CDs have good biocompatibility and can be easily and quickly internalized by living cancer cells; they can also be used for multicolour biolabeling and bioimaging in cancer cells. It is suggested that bagasse-derived CDs might have potential applications in biomedical and photoelectronic fields. (paper)

  19. Stimulated emission and lasing from all-inorganic perovskite quantum dots

    Science.gov (United States)

    Sun, Handong; Wang, Yue; Li, Xiaoming; Haibo, Zeng

    We present superior optical gain and lasing properties in a new class of emerging quantum materials, the colloidal all-inorganic cesium lead halide perovskite quantum dots (IPQDs) (CsPbX3, X = Cl, Br, I). Our result has indicated that such material system show combined merits of both colloidal quantum dots and halide perovskites. Low-threshold and ultrastable stimulated emission was demonstrated under atmospheric condition. The flexibility and advantageous optical gain properties of these CsPbX3 IPQDs were manifested by demonstration of an optically pumped micro-laser. The nonlinear optical properties including the multi-photon absorption and resultant photoluminescence of the CsPbX3 nanocrystals were investigated. A large two-photon absorption cross-section of up to ~1.2×105 GM is determined from 9 nm-sized CsPbBr3 nanocrystals. Moreover, low-threshold frequency-upconverted stimulated emission by two-photon absorption was observed from the thin films of close-packed CsPbBr3 nanocrystals. We further realize the three-photon pumped stimulated emission in green spectra range from colloidal IPQD.

  20. Carrier transfer in vertically stacked quantum ring-quantum dot chains

    Energy Technology Data Exchange (ETDEWEB)

    Mazur, Yu. I., E-mail: ymazur@uark.edu; Dorogan, V. G.; Benamara, M.; Salamo, G. J. [Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Lopes-Oliveira, V.; Lopez-Richard, V.; Teodoro, M. D.; Marques, G. E. [Departamento de Fisica, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo (Brazil); Souza, L. D. de [Departamento de Fisica, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo (Brazil); Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Wu, J.; Wang, Z. M. [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu (China); Tarasov, G. G. [Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev 03028 (Ukraine); Marega, E. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13.566-590 São Carlos, São Paulo (Brazil)

    2015-04-21

    The interplay between structural properties and charge transfer in self-assembled quantum ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot (QD) superlattice template is analyzed and characterized. The QDs and QRs are vertically stacked and laterally coupled as well as aligned within each layer due to the strain field distributions that governs the ordering. The strong interdot coupling influences the carrier transfer both along as well as between chains in the ring layer and dot template structures. A qualitative contrast between different dynamic models has been developed. By combining temperature and excitation intensity effects, the tuning of the photoluminescence gain for either the QR or the QD mode is attained. The information obtained here about relaxation parameters, energy scheme, interlayer and interdot coupling resulting in creation of 1D structures is very important for the usage of such specific QR–QD systems for applied purposes such as lasing, detection, and energy-harvesting technology of future solar panels.