WorldWideScience

Sample records for highly excited silicon

  1. High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

    Czech Academy of Sciences Publication Activity Database

    Strobel, C.; Leszczynska, B.; Merkel, U.; Kuske, J.; Fischer, D.D.; Albert, M.; Holovský, Jakub; Michard, S.

    2015-01-01

    Roč. 143, Dec (2015), 347-353 ISSN 0927-0248 R&D Projects: GA MŠk 7E12029 EU Projects: European Commission(XE) 283501 - Fast Track Institutional support: RVO:68378271 Keywords : VHF * PECVD * microcrystalline silicon * solar cell * high rate * high efficiency Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

  2. High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump–probe reflectivity measurements

    Energy Technology Data Exchange (ETDEWEB)

    He, Wei [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Yurkevich, Igor V. [Aston University, Nonlinearity and Complexity Research Group, Birmingham B4 7ET (United Kingdom); Zakar, Ammar [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Kaplan, Andrey, E-mail: a.kaplan.1@bham.ac.uk [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom)

    2015-10-01

    We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump–probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820 nm, whereas the probe wavelength spanned 770 to 810 nm. The pump fluence was fixed at 0.6 mJ/cm{sup 2}. We show that at a fixed delay time of 300 fs, the conductivity of the excited electron–hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell–Boltzmann distribution, while Fermi–Dirac statics is not suitable. This is corroborated by values retrieved from pump–probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas. - Highlights: • We study high‐frequency conductivity of excited hydrogenated nanocrystalline silicon. • Reflectance change was measured as a function of pump and probe wavelength. • Maxwell–Boltzmann transport theory was used to retrieve the conductivity. • The conductivity decreases monotonically as a function of the pump wavelength.

  3. Time-resolved spectroscopy of plasma resonances in highly excited silicon and germanium

    International Nuclear Information System (INIS)

    Huang, C.Y.; Malvezzi, A.M.; Bloembergen, N.; Kurz, H.

    1985-01-01

    The dynamics of the electron-hole plasma in silicon and germanium samples irradiated by 20 ps. 532 nm laser pulses has been investigated in the near infrared by the time-resolved picosecond optical spectroscopy. The experimental reflectivities and transmission are compared with the predictions of the thermal model for degenerate carrier distributions through the Drude formalism. Above a certain fluence, a significant deviation between measured and calculated values indicates a strong increase of the recombination rate as soon as the plasma resonances become comparable with the band gaps. These new plasmon-aided recombination channels are particularly pronounced in germanium. 15 refs., 8 figs

  4. High energy nuclear excitations

    International Nuclear Information System (INIS)

    Gogny, D.; Decharge, J.

    1983-09-01

    The main purpose of this talk is to see whether a simple description of the nuclear excitations permits one to characterize some of the high energy structures recently observed. The discussion is based on the linear response to different external fields calculated using the Random Phase Approximation. For those structure in heavy ion collisions at excitation energies above 50 MeV which cannot be explained with such a simple approach, we discuss a possible mechanism for this heavy ion scattering

  5. Excitation dependence of photoluminescence in silicon quantum dots

    International Nuclear Information System (INIS)

    Wen Xiaoming; Lap Van Dao; Hannaford, Peter; Cho, E-C; Cho, Young H; Green, Martin A

    2007-01-01

    We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron-hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron-hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide

  6. Highly excited atoms

    International Nuclear Information System (INIS)

    Kleppner, D.; Littman, M.G.; Zimmerman, M.L.

    1981-01-01

    Highly excited atoms are often called Rydberg atoms. These atoms have a wealth of exotic properties which are discussed. Of special interest, are the effects of electric and magnetic fields on Rydberg atoms. Ordinary atoms are scarcely affected by an applied electric or magnetic field; Rydberg atoms can be strongly distorted and even pulled apart by a relatively weak electric field, and they can be squeezed into unexpected shapes by a magnetic field. Studies of the structure of Rydberg atoms in electric and magnetic fields have revealed dramatic atomic phenomena that had not been observed before

  7. Synchrotron radiation excited silicon epitaxy using disilane

    International Nuclear Information System (INIS)

    Akazawa, Housei; Utsumi, Yuichi

    1995-01-01

    Synchrotron radiation (SR) excited chemical reactions provide new crystal growth methods suitable for low-temperature Si epitaxy. The growth kinetics and film properties were investigated by atomic layer epitaxy (ALE) and photochemical vapor deposition (CVD) modes using Si 2 H 6 . SR-ALE, isolating the surface growth channel mediated by photon stimulated hydrogen desorption, achieves digital growth independent of gas exposure time, SR irradiation time, and substrate temperature. On the other hand in SR-CVD, photolysis of Si 2 H 6 is predominant. In the nonirradiated region, Eley-Rideal type reaction between the photofragments and the surface deposit Si adatoms in a layer-by-layer fashion. In the irradiated region, however, multi-layer photolysis and rebounding occurs within the condensed Si 2 H 6 layer. The pertinent elementary processes were identified by using the high-resolution time-of-flight mass spectroscopy. The SR-CVD can grow a uniform and epitaxial Si film down to 200degC. The surface morphology is controlled by the surfactant effect of hydrogen atoms. (author)

  8. High energy magnetic excitations

    International Nuclear Information System (INIS)

    Endoh, Yasuo

    1988-01-01

    The report emphasizes that the current development in condensed matter physics opens a research field fit to inelastic neutron scattering experiments in the eV range which is easilly accessed by spallation neutron sources. Several important subjects adopted at thermal reactors are shown. It is desired to extend the implementation of the spectroscopic experiments for investigation of higher energy magnetic excitations. For La 2 CuO 4 , which is the mother crystal of the first high Tc materials found by Bednortz and Muller, it seems to be believed that the magnetism is well characterized by the two-dimensional Heisenberg antiferromagnetic Hamiltonian, and it is widely accepted that the magnetism is a most probable progenitor of high Tc superconductors. The unusual properties of spin correlations in this crystal have been studied extensively by standard neutron scattering techniques with steady neutrons at BNL. FeSi is not ordered magnetically but shows a very unique feature of temperature induced magnetism, which also has been studied extensively by using the thermal neutron scattering technique at BNL. In these experiments, polarized neutrons are indispensable to extract the clean magnetic components out of other components of non-magnetic scattering. (N.K.)

  9. STM-excited luminescence of porous and spark-processed silicon

    International Nuclear Information System (INIS)

    Andrienko, I.; Kuznetsov, V.; Yuan, J.; Haneman, D.

    1998-01-01

    Full text: Scanning tunneling microscopy (STM) permits highly local electronic excitation of light emission (LE) from the surface of silicon. Measuring STM LE, one can study simultaneously both the topography and the luminescence properties of areas down to nm dimensions and thus make conclusions about the luminescence mechanism of the material. We have built an STM spectroscopy system which allows measurement of spectra of visible light emitted from areas as small as 13 x 13 nm 2 (porous silicon) and 10 x 10 nm 2 (spark-processed silicon). Porous silicon shows a broad emission band centered at 630 nm, and spark-processed silicon, one at 690 nm. The STM LE spectra of spark-processed silicon obtained for the first time. We have found that visible light is emitted only from areas containing nanometer-scale structures down to around 2 nm in diameter. STM LE occurs under negative bias voltage applied to the tip, i.e. when electrons are injected into the sample. Other workers used p-type silicon for the sample preparations, but it has been found that STM LE can be induced also from n-type silicon. Furthermore, we have shown that STM LE spectra can be resolved using much lover voltages and tunneling currents: -(7-9) V and 25 - 50 nA vs -(25-50) V and 100 nA. To consider different excitation mechanisms, the STM LE measurements are compared with photoluminescence and electroluminescence spectra of similar samples. We suggest that excitation of individual quantum confinement structures has been observed

  10. High power laser exciter accelerators

    International Nuclear Information System (INIS)

    Martin, T.H.

    1975-01-01

    Recent developments in untriggered oil and water switching now permit the construction of compact, high energy density pulsed power sources for laser excitation. These accelerators, developed principally for electron beam fusion studies, appear adaptable to laser excitation and will provide electron beams of 10 13 to 10 14 W in the next several years. The accelerators proposed for e-beam fusion essentially concentrate the available power from the outside edge of a disk into the central region where the electron beam is formed. One of the main problem areas, that of power flow at the vacuum diode insulator, is greatly alleviated by the multiplicity of electron beams that are allowable for laser excitation. A proposal is made whereby the disk-shaped pulsed power sections are stacked vertically to form a series of radially flowing electron beams to excite the laser gas volume. (auth)

  11. Nonlinear behavior of photoluminescence from silicon particles under two-photon excitation

    International Nuclear Information System (INIS)

    Xu Xingsheng; Yokoyama, Shiyoshi

    2011-01-01

    Two-photon excited fluorescence (TPEF) under continuous-wave excitation from silicon particles produced by a pulsed laser is investigated. Spectra and images of TPEF from silicon particles are studied under different excitation intensities and operation modes (continuous wave or pulse). It is found that the photoluminescence depends superlinearly on the excitation intensity and that the spectral shape and peaks vary with different silicon particles. The above phenomena show the nonlinear behavior of TPEF from silicon particles, and stimulated emission is a possible process.

  12. High excitation ISM and gas

    NARCIS (Netherlands)

    Peeters, E; Martinez-Hernandez, NL; Rodriguez-Fernandez, NJ; Tielens, [No Value

    An overview is given of ISO results on regions of high excitation ISM and gas, i.e. H II regions, the Galactic Centre and Supernova Remnants. IR emission due to fine-structure lines, molecular hydrogen, silicates, polycyclic aromatic hydrocarbons and dust are summarised, their diagnostic

  13. High Excitation Gas and ISM

    Science.gov (United States)

    Peeters, E.; Martin-Hernandez, N. L.; Rodriguez-Fernandez, N. J.; Tielens, A. G. G. M.

    2004-01-01

    An overview is given of ISO results on regions of high excitation ISM and gas, i.e. HII regions, the Galactic Centre and Supernovae Remnants. IR emission due to fine-structure lines, molecular hydrogen, silicates, polycyclic aromatic hydrocarbons and dust are summarized, their diagnostic capabilities illustrated and their implications highlighted.

  14. Effect resonance radiation transfer of excitation porous silicon to I sub 2 molecules sorbed in pores

    CERN Document Server

    Zakharchenko, K V; Kuznetsov, M B; Chistyakov, A A; Karavanskij, V A

    2001-01-01

    One studies the effect of resonance radiation-free transfer of electronic excitation between silicon nanocrystals and iodine molecules sorbed in pores. The experiment procedure includes laser-induced luminescence and laser desorption mass spectrometry. One analyzes photoluminescence spectra prior to and upon iodine sorption. Excitation of iodine through the mechanism of resonance transfer is determined to result in desorption of the iodine sorbed molecules with relatively high kinetic energies (3-1 eV). One evaluated the peculiar distance of resonance transfer the approximate value of which was equal to 2 nm

  15. An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

    Science.gov (United States)

    Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

    2017-09-01

    Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

  16. Multiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond

    Science.gov (United States)

    Higbie, J. M.; Perreault, J. D.; Acosta, V. M.; Belthangady, C.; Lebel, P.; Kim, M. H.; Nguyen, K.; Demas, V.; Bajaj, V.; Santori, C.

    2017-05-01

    Silicon-vacancy color centers in nanodiamonds are promising as fluorescent labels for biological applications, with a narrow, nonbleaching emission line at 738 nm. Two-photon excitation of this fluorescence offers the possibility of low-background detection at significant tissue depth with high three-dimensional spatial resolution. We measure the two-photon fluorescence cross section of a negatively charged silicon vacancy (Si -V- ) in ion-implanted bulk diamond to be 0.74 (19 )×10-50 cm4 s /photon at an excitation wavelength of 1040 nm. Compared to the diamond nitrogen-vacancy center, the expected detection threshold of a two-photon excited Si -V center is more than an order of magnitude lower, largely due to its much narrower linewidth. We also present measurements of two- and three-photon excitation spectra, finding an increase in the two-photon cross section with decreasing wavelength, and we discuss the physical interpretation of the spectra in the context of existing models of the Si -V energy-level structure.

  17. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  18. Enhancement of deposition rate at cryogenic temperature in synchrotron radiation excited deposition of silicon film

    International Nuclear Information System (INIS)

    Nara, Yasuo; Sugita, Yoshihiro; Ito, Takashi; Kato, Hiroo; Tanaka, Ken-ichiro

    1989-01-01

    The authors have investigated the synchrotron radiation excited deposition of silicon films on the SiO 2 substrate by using SiH 4 /He mixture gas at BL-12C at Photon Factory. They used VUV light from the multilayer mirror with the center photon energy from 97 to 123eV, which effectively excites L-core electrons of silicon. Substrate temperature was widely varied from -178 degree C to 500 degree C. At -178 degree C, the deposition rate was as high as 400nm/200mAHr (normalized at the storage ring current at 200mA). As increasing the substrate temperature, the deposition rate was drastically decreased. The number of deposited silicon atoms is estimated to be 4 to 50% of incident photons, while the number of photo generated species in the gas phase within the mean free path from the surface is calculated as few as about 10 -3 of incident photons. These experimental results show that the deposition reaction is governed by the dissociation of surface adsorbates by the synchrotron radiation

  19. Plasmonic and Photonic Modes Excitation in Graphene on Silicon Photonic Crystal Membrane

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Gu, Tingyi; Hao, Yufeng

    . Being deposited on a silicon photonic crystal membrane graphene serves as a highly promising system for modern optoelectronics with rich variety of possible regimes. Depending on the relation between the photonic crystal lattice constant and wavelengths (plasmonic, photonic and free-space) we identify...... characterization. Measured data are well correlated with the numerical analysis. Combined graphene – silicon photonic crystal membranes can find applications for infrared absorbers, modulators, filters, sensors and photodetectors....... four different interaction schemes. We refer to them as metamaterial, plasmonic, photonic and diffraction grating regimes based on the principle character of light interactions with the graphene deposited on the Si photonic crystal membrane. The optimal configurations for resonant excitation of modes...

  20. Autoionizing states in highly ionized oxygen, fluorine and silicon

    International Nuclear Information System (INIS)

    Forester, J.P.; Peterson, R.S.; Griffin, P.M.; Pegg, D.J.; Haselton, H.H.; Liao, K.H.; Sellin, I.A.; Mowat, J.R.; Thoe, R.S.

    1975-01-01

    Autoionizing states in high Z 3-electron ions associated with core excited configurations of the type 1s2snl and 1s2pnl are reported. The electron decay-in-flight spectra of lithium-like oxygen, fluorine, and silicon ions are presented. Initial beam energies of 6.75-MeV oxygen and fluorine ions and 22.5-MeV silicon ions were used. Stripping and excitation were done by passing the beams through a thin carbon foil. The experimental technique is described. 4 figs, 1 table, 7 refs

  1. Scattering of highly excited atoms

    International Nuclear Information System (INIS)

    Raith, W.

    1980-01-01

    Experimental methods to excite atomic beams into Rydberg states and the first results of collision experiments with such beams are reported. For further information see hints under relevant topics. (orig.) [de

  2. Electronic band structure in porous silicon studied by photoluminescence and photoluminescence excitation spectroscopy

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Kim, Young-You

    2004-01-01

    In this research, we used photoluminescence (PL) and photoluminescence excitation (PLE) to visualize the electronic band structure in porous silicon (PS). From the combined results of the PLE measurements at various PL emission energies and the PL measurements under excitation at various PLE absorption energies, we infer that three different electronic band structures, originating from different luminescent origins, give rise to the PL spectrum. Through either thermal activation or diffusive transfer, excited carriers are moved to each of the electronic band structures.

  3. Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion

    Science.gov (United States)

    Rong, Youying; Ma, Jianhui; Chen, Lingxiao; Liu, Yan; Siyushev, Petr; Wu, Botao; Pan, Haifeng; Jelezko, Fedor; Wu, E.; Zeng, Heping

    2018-05-01

    We report a method with high time resolution to measure the excited-state lifetime of silicon vacancy centers in bulk diamond avoiding timing jitter from the single-photon detectors. Frequency upconversion of the fluorescence emitted from silicon vacancy centers was achieved from 738 nm to 436 nm via sum frequency generation with a short pump pulse. The excited-state lifetime can be obtained by measuring the intensity of upconverted light while the pump delay changes. As a probe, a pump laser with pulse duration of 11 ps provided a high temporal resolution of the measurement. The lifetime extracted from the pump–probe curve was 0.755 ns, which was comparable to the timing jitter of the single-photon detectors.

  4. Total cross section of highly excited strings

    International Nuclear Information System (INIS)

    Lizzi, F.; Senda, I.

    1990-01-01

    The unpolarized total cross section for the joining of two highly excited strings is calculated. The calculation is performed by taking the average overall states in the given excitation levels of the initial strings. We find that the total cross section grows with the energy and momentum of the initial states. (author). 8 refs, 1 fig

  5. Microstructure ion Nuclear Spectra at High Excitation

    International Nuclear Information System (INIS)

    Ericson, T.E.O.

    1969-01-01

    The statistical microstructure of highly excited systems is illustrated by the distribution and fluctuations of levels, widths and cross-sections of nuclei both for the case of sharp resonances and the continuum case. The coexistence of simple modes of excitation with statistical effects in terms of strength functions is illustrated by isobaric analogue states. The analogy is made with similar phenomena for coherent light, is solid-state physics and high-energy physics. (author)

  6. High energy excitations in itinerant ferromagnets

    International Nuclear Information System (INIS)

    Prange, R.E.

    1984-01-01

    Itinerant magnets, those whose electrons move throughout the crystal, are described by band theory. Single particle excitations offer confirmation of band theory, but their description requires important corrections. The energetics of magnetism in iron and nickel is also described in band theory but requires complex bands. Magnetism above the critical temperature and the location of the critical temperature offer discriminants between the two major models of magnetism at high temperature and can be addressed by high energy excitations

  7. Recent experiments involving highly excited atoms

    International Nuclear Information System (INIS)

    Latimer, C.J.

    1979-01-01

    Very large and fragile atoms may be produced by exciting normal atoms with light or by collisions with other atomic particles. Atoms as large as 10 -6 m are now routinely produced in the laboratory and their properties studied. In this review some of the simpler experimental methods available for the production and detection of such atoms are described including tunable dye laser-excitation and field ionization. A few recent experiments which illustrate the collision properties and the effects of electric and and magnetic fields are also described. The relevance of highly excited atoms in other areas of research including radioastronomy and isotope separation are discussed. (author)

  8. Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

    Science.gov (United States)

    Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

    2015-02-07

    Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

  9. X-ray excited optical luminescence (XEOL) and its application to porous silicon

    International Nuclear Information System (INIS)

    Hill, D.A.

    1998-09-01

    X-ray Excited Optical Luminescence (XEOL) is investigated as a local structural probe of the light-emitting sites in porous silicon. A detailed microscopic model of the XEOL process in porous silicon is proposed. A central aspect of the technique is an assessment of the spatial separation between the primary photoionisation event and subsequent optical radiative recombination. By constructing a Monte Carlo simulation of hot electron propagation in silicon using both elastic and inelastic scattering cross-sections, the mean minimum range of luminescence excitation can be calculated. This range is estimated as 546±1A for the silicon K-edge (∼ 1839eV), but is reduced to 8.9±0.1A for the silicon L 2,3 -edge (∼ 99eV). From known porous silicon properties, it is concluded that this mean minimum range is comparable to the actual range of excitation. Hence, more localised structural information may be obtained from L 2,3 -edge XEOL measurements. This important difference between the two spectra has been neglected in previous studies. Simultaneous measurements of the XEOL and total electron yield (TEY) x-ray absorption spectra (XAS) have been conducted at both the silicon K-edge and L 2,3 -edge for various porous silicon samples and related materials. Measurements have been conducted at the Si K-edge on a rapid thermally oxidised (RTO) porous silicon sample. XEOL spectra yield two distinct luminescence bands in the visible region. From multi-bunch wavelength-selective XEOL measurements, it is concluded that there are blue luminescent defective silica sites together with a red luminescent site originating from silicon-like material. The spectral time decay curve under pulsed x-ray excitation gives two distinct decay components; one fast in the range of a few nanoseconds and the other slow in the range of microseconds. Time-resolved XEOL measurements in single-bunch mode show that the fast band mirrors the blue wavelength XEOL whereas the slow band correlates with the

  10. Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

    International Nuclear Information System (INIS)

    Elgersma, O.; Borstrok, J.J.M.

    1989-01-01

    Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

  11. Effects of excitation intensity on the photocurrent response of thin film silicon solar modules

    Science.gov (United States)

    Kim, Q.; Shumka, A.; Trask, J.

    1986-01-01

    Photocurrent responses of amorphous thin film silicon solar modules at room temperature were studied at different excitation intensities using various monochromatic light sources. Photocurrent imaging techniques have been effectively used to locate rapidly, and non-destructively, failure and defect sites in the multilayer thin film device. Differences observed in the photocurrent response characteristics for two different cells in the same amorphous thin film silicon solar module suggest the possibility of the formation of dissimilarly active devices, even though the module is processed in the same fabrication process. Possible mechanisms are discussed.

  12. An FPGA-based silicon neuronal network with selectable excitability silicon neurons

    Directory of Open Access Journals (Sweden)

    Jing eLi

    2012-12-01

    Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

  13. Excitation of nanowire surface plasmons by silicon vacancy centers in nanodiamonds

    DEFF Research Database (Denmark)

    Kumar, Shailesh; Davydov, Valery A.; Agafonov, Viatcheslav N.

    2017-01-01

    Silicon vacancy (SiV) centers in diamonds have emerged as a very promising candidate for quantum emitters due to their narrow emission line resulting in their indistinguishability. While many different quantum emitters have already been used for the excitation of various propagating plasmonic modes......, the corresponding exploitation of SiV centers has remained so far uncharted territory. Here, we report on the excitation of surface plasmon modes supported by silver nanowires using SiV centers in nanodiamonds. The coupling of SiV center fluorescence to surface plasmons is observed, when a nanodiamond situated...

  14. Multipole giant resonances in highly excited nuclei

    International Nuclear Information System (INIS)

    Xia Keding; Cai Yanhuang

    1989-01-01

    The isoscalar giant surface resonance and giant dipole resonance in highly excited nuclei are discussed. Excitation energies of the giant modes in 208 Pb are calculated in a simplified model, using the concept of energy wieghted sum rule (EWSR), and the extended Thomas-Fermi approximation at the finite temperature is employed to describe the finite temperature is employed to describe the finite temperature equilibrium state. It is shown that EWSR and the energy of the resonance depend only weakly on temperature in the system. This weak dependence is analysed

  15. Two-photon excitation of porphyrin-functionalized porous silicon nanoparticles for photodynamic therapy.

    Science.gov (United States)

    Secret, Emilie; Maynadier, Marie; Gallud, Audrey; Chaix, Arnaud; Bouffard, Elise; Gary-Bobo, Magali; Marcotte, Nathalie; Mongin, Olivier; El Cheikh, Khaled; Hugues, Vincent; Auffan, Mélanie; Frochot, Céline; Morère, Alain; Maillard, Philippe; Blanchard-Desce, Mireille; Sailor, Michael J; Garcia, Marcel; Durand, Jean-Olivier; Cunin, Frédérique

    2014-12-03

    Porous silicon nanoparticles (pSiNPs) act as a sensitizer for the 2-photon excitation of a pendant porphyrin using NIR laser light, for imaging and photodynamic therapy. Mannose-functionalized pSiNPs can be vectorized to MCF-7 human breast cancer cells through a mannose receptor-mediated endocytosis mechanism to provide a 3-fold enhancement of the 2-photon PDT effect. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. High yield silicon carbide prepolymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

  17. Fluorescent porous silicon biological probes with high quantum efficiency and stability.

    Science.gov (United States)

    Tu, Chang-Ching; Chou, Ying-Nien; Hung, Hsiang-Chieh; Wu, Jingda; Jiang, Shaoyi; Lin, Lih Y

    2014-12-01

    We demonstrate porous silicon biological probes as a stable and non-toxic alternative to organic dyes or cadmium-containing quantum dots for imaging and sensing applications. The fluorescent silicon quantum dots which are embedded on the porous silicon surface are passivated with carboxyl-terminated ligands through stable Si-C covalent bonds. The porous silicon bio-probes have shown photoluminescence quantum yield around 50% under near-UV excitation, with high photochemical and thermal stability. The bio-probes can be efficiently conjugated with antibodies, which is confirmed by a standard enzyme-linked immunosorbent assay (ELISA) method.

  18. Dynamical analysis of highly excited molecular spectra

    Energy Technology Data Exchange (ETDEWEB)

    Kellman, M.E. [Univ. of Oregon, Eugene (United States)

    1993-12-01

    The goal of this program is new methods for analysis of spectra and dynamics of highly excited vibrational states of molecules. In these systems, strong mode coupling and anharmonicity give rise to complicated classical dynamics, and make the simple normal modes analysis unsatisfactory. New methods of spectral analysis, pattern recognition, and assignment are sought using techniques of nonlinear dynamics including bifurcation theory, phase space classification, and quantization of phase space structures. The emphasis is chaotic systems and systems with many degrees of freedom.

  19. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  20. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  1. High-density oxidized porous silicon

    International Nuclear Information System (INIS)

    Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

    2012-01-01

    We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

  2. High-spin excitations of atomic nuclei

    International Nuclear Information System (INIS)

    Xu Furong; National Laboratory of Heavy Ion Physics, Lanzhou; Chinese Academy of Sciences, Beijing

    2004-01-01

    The authors used the cranking shell model to investigate the high-spin motions and structures of atomic nuclei. The authors focus the collective rotations of the A∼50, 80 and 110 nuclei. The A∼50 calculations show complicated g spectroscopy, which can have significant vibration effects. The A≅80 N≅Z nuclei show rich shape coexistence with prolate and oblate rotational bands. The A≅110 nuclei near the r-process path can have well-deformed oblate shapes that become yrast and more stable with increasing rotational frequency. As another important investigation, the authors used the configuration-constrained adiabatic method to calculate the multi-quasiparticle high-K states in the A∼130, 180 and superheavy regions. The calculations show significant shape polarizations due to quasi-particle excitations for soft nuclei, which should be considered in the investigations of high-K states. The authors predicted some important high-K isomers, e.g., the 8 - isomers in the unstable nuclei of 140 Dy and 188 Pb, which have been confirmed in experiments. In superheavy nuclei, our calculations show systematic existence of high-K states. The high-K excitations can increase the productions of synthesis and the survival probabilities of superheavy nuclei. (authors)

  3. Ab initio structural and electronic properties of hydrogenated silicon nanoclusters in the ground and excited state

    International Nuclear Information System (INIS)

    Degoli, Elena; Bisi, O.; Ossicini, Stefano; Cantele, G.; Ninno, D.; Luppi, Eleonora; Magri, Rita

    2004-01-01

    Electronic and structural properties of small hydrogenated silicon nanoclusters as a function of dimension are calculated from ab initio technique. The effects induced by the creation of an electron-hole pair are discussed in detail, showing the strong interplay between the structural and optical properties of the system. The distortion induced on the structure after an electronic excitation of the cluster is analyzed together with the role of the symmetry constraint during the relaxation. We point out how the overall effect is that of significantly changing the electronic spectrum if no symmetry constraint is imposed to the system. Such distortion can account for the Stokes shift and provides a possible structural model to be linked to the four-level scheme invoked in the literature to explain recent results for the optical gain in silicon nanoclusters. Finally, formation energies for clusters with increasing dimension are calculated and their relative stability discussed

  4. Generalized rate-equation analysis of excitation exchange between silicon nanoclusters and erbium ions

    International Nuclear Information System (INIS)

    Kenyon, A. J.; Wojdak, M.; Ahmad, I.; Loh, W. H.; Oton, C. J.

    2008-01-01

    We discuss the use of rate equations to analyze the sensitization of erbium luminescence by silicon nanoclusters. In applying the general form of second-order coupled rate-equations to the Si nanocluster-erbium system, we find that the photoluminescence dynamics cannot be described using a simple rate equation model. Both rise and fall times exhibit a stretched exponential behavior, which we propose arises from a combination of a strongly distance-dependent nanocluster-erbium interaction, along with the finite size distribution and indirect band gap of the silicon nanoclusters. Furthermore, the low fraction of erbium ions that can be excited nonresonantly is a result of the small number of ions coupled to nanoclusters

  5. High damage tolerance of electrochemically lithiated silicon

    Science.gov (United States)

    Wang, Xueju; Fan, Feifei; Wang, Jiangwei; Wang, Haoran; Tao, Siyu; Yang, Avery; Liu, Yang; Beng Chew, Huck; Mao, Scott X.; Zhu, Ting; Xia, Shuman

    2015-01-01

    Mechanical degradation and resultant capacity fade in high-capacity electrode materials critically hinder their use in high-performance rechargeable batteries. Despite tremendous efforts devoted to the study of the electro–chemo–mechanical behaviours of high-capacity electrode materials, their fracture properties and mechanisms remain largely unknown. Here we report a nanomechanical study on the damage tolerance of electrochemically lithiated silicon. Our in situ transmission electron microscopy experiments reveal a striking contrast of brittle fracture in pristine silicon versus ductile tensile deformation in fully lithiated silicon. Quantitative fracture toughness measurements by nanoindentation show a rapid brittle-to-ductile transition of fracture as the lithium-to-silicon molar ratio is increased to above 1.5. Molecular dynamics simulations elucidate the mechanistic underpinnings of the brittle-to-ductile transition governed by atomic bonding and lithiation-induced toughening. Our results reveal the high damage tolerance in amorphous lithium-rich silicon alloys and have important implications for the development of durable rechargeable batteries. PMID:26400671

  6. High-efficient solar cells with porous silicon

    International Nuclear Information System (INIS)

    Migunova, A.A.

    2002-01-01

    It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

  7. Analysis of asymmetric resonance response of thermally excited silicon micro-cantilevers for mass-sensitive nanoparticle detection

    Science.gov (United States)

    Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Suryo Wasisto, Hutomo; Uhde, Erik; Peiner, Erwin

    2017-06-01

    In this paper, the asymmetric resonance frequency (f 0) responses of thermally in-plane excited silicon cantilevers for a pocket-sized, cantilever-based airborne nanoparticle detector (Cantor) are analysed. By measuring the shift of f 0 caused by the deposition of nanoparticles (NPs), the cantilevers are used as a microbalance. The cantilever sensors are low cost manufactured from silicon by bulk-micromachining techniques and contain an integrated p-type heating actuator and a sensing piezoresistive Wheatstone bridge. f 0 is tracked by a homemade phase-locked loop (PPL) for real-time measurements. To optimize the sensor performance, a new cantilever geometry was designed, fabricated and characterized by its frequency responses. The most significant characterisation parameters of our application are f 0 and the quality factor (Q), which have high influences on sensitivity and efficiency of the NP detector. Regarding the asymmetric resonance signal, a novel fitting function based on the Fano resonance replacing the conventionally used function of the simple harmonic oscillator and a method to calculate Q by its fitting parameters were developed for a quantitative evaluation. To obtain a better understanding of the resonance behaviours, we analysed the origin of the asymmetric line shapes. Therefore, we compared the frequency response of the on-chip thermal excitation with an external excitation using an in-plane piezo actuator. In correspondence to the Fano effect, we could reconstruct the measured resonance curves by coupling two signals with constant amplitude and the expected signal of the cantilever, respectively. Moreover, the phase of the measurement signal can be analysed by this method, which is important to understand the locking process of the PLL circuit. Besides the frequency analysis, experimental results and calibration measurements with different particle types are presented. Using the described analysis method, decent results to optimize a next

  8. TRANSFORMATIONS IN NANO-DIAMONDS WITH FORMATION OF NANO-POROUS SILICON CARBIDE AT HIGH PRESSURE

    Directory of Open Access Journals (Sweden)

    V. N. Kovalevsky

    2010-01-01

    Full Text Available The paper contains investigations on regularities of diamond - silicon carbide composite structure formation at impact-wave excitation. It has been determined that while squeezing a porous blank containing Si (SiC nano-diamond by explosive detonation products some processes are taking place such as diamond nano-particles consolidation, reverse diamond transition into graphite, fragments formation from silicon carbide. A method for obtaining high-porous composites with the presence of ultra-disperse diamond particles has been developed. Material with three-dimensional high-porous silicon-carbide structure has been received due to nano-diamond graphitation at impact wave transmission and plastic deformation. The paper reveals nano-diamonds inverse transformation into graphite and its subsequent interaction with the silicon accompanied by formation of silicon-carbide fragments with dimensions of up to 100 nm.

  9. Silicon as a virtual plasmonic material: Acquisition of its transient optical constants and the ultrafast surface plasmon-polariton excitation

    Energy Technology Data Exchange (ETDEWEB)

    Danilov, P. A.; Ionin, A. A.; Kudryashov, S. I., E-mail: sikudr@sci.lebedev.ru; Makarov, S. V.; Rudenko, A. A. [Lebedev Physical Institute (Russian Federation); Saltuganov, P. N. [Moscow Institute of Physics and Technology (State University) (Russian Federation); Seleznev, L. V.; Yurovskikh, V. I.; Zayarny, D. A. [Lebedev Physical Institute (Russian Federation); Apostolova, T. [Bulgarian Academy of Sciences, Institute for Nuclear Research and Nuclear Energetics (Bulgaria)

    2015-06-15

    Ultrafast intense photoexcitation of a silicon surface is complementarily studied experimentally and theoretically, with its prompt optical dielectric function obtained by means of time-resolved optical reflection microscopy and the underlying electron-hole plasma dynamics modeled numerically, using a quantum kinetic approach. The corresponding transient surface plasmon-polariton (SPP) dispersion curves of the photo-excited material were simulated as a function of the electron-hole plasma density, using the derived optical dielectric function model, and directly mapped at several laser photon energies, measuring spatial periods of the corresponding SPP-mediated surface relief nanogratings. The unusual spectral dynamics of the surface plasmon resonance, initially increasing with the increase in the electron-hole plasma density but damped at high interband absorption losses induced by the high-density electron-hole plasma through instantaneous bandgap renormalization, was envisioned through the multi-color mapping.

  10. High frequency guided wave propagation in monocrystalline silicon wafers

    Science.gov (United States)

    Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

    2017-04-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

  11. The [NeIV] Lines in High Excitation Gaseous Nebulae.

    Science.gov (United States)

    Aller, L H

    1970-04-01

    The "forbidden" lines of three times ionized neon are among the most precious indicators of electron temperature and excitation. They are also predicted to be among the strongest lines observed in the far ultraviolet spectra of high excitation nebulae.

  12. Amorphous silicon as high index photonic material

    Science.gov (United States)

    Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

    2009-05-01

    Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

  13. Highly excited strings I: Generating function

    Directory of Open Access Journals (Sweden)

    Dimitri P. Skliros

    2017-03-01

    Full Text Available This is the first of a series of detailed papers on string amplitudes with highly excited strings (HES. In the present paper we construct a generating function for string amplitudes with generic HES vertex operators using a fixed-loop momentum formalism. We generalise the proof of the chiral splitting theorem of D'Hoker and Phong to string amplitudes with arbitrary HES vertex operators (with generic KK and winding charges, polarisation tensors and oscillators in general toroidal compactifications E=RD−1,1×TDcr−D (with generic constant Kähler and complex structure target space moduli, background Kaluza–Klein (KK gauge fields and torsion. We adopt a novel approach that does not rely on a “reverse engineering” method to make explicit the loop momenta, thus avoiding a certain ambiguity pointed out in a recent paper by Sen, while also keeping the genus of the worldsheet generic. This approach will also be useful in discussions of quantum gravity and in particular in relation to black holes in string theory, non-locality and breakdown of local effective field theory, as well as in discussions of cosmic superstrings and their phenomenological relevance. We also discuss the manifestation of wave/particle (or rather wave/string duality in string theory.

  14. Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

    International Nuclear Information System (INIS)

    Gessner, T.; Irmer, K.

    1983-01-01

    A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

  15. Excitations

    International Nuclear Information System (INIS)

    Dorner, B.

    1996-01-01

    A short introduction to instrumental resolution is followed by a discussion of visibilities of phonon modes due to their eigenvectors. High precision phonon dispersion curves in GaAs are presented together with 'ab initio' calculations. Al 2 O 3 is taken as an example of selected visibility due to group theory. By careful determination of phonon intensities eigenvectors can be determined, such as in Silicon and Diamond. The investigation of magnon modes is shown for the garnet Fe 2 Ca 3 (GeO 4 ) 3 , where also a quantum gap due to zero point spin fluctuations was observed. The study of the splitting of excitons in CsFeCl 3 in an applied magnetic field demonstrates the possibilities of neutron polarisation analysis, which made it possible to observe a mode crossing. An outlook to inelastic X-ray scattering with very high energy resolution of synchrotron radiation is given with the examples of phonons in Beryllium and in water. (author) 19 figs., 36 refs

  16. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  17. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  18. Energy dependence of the ionization of highly excited atoms by collisions with excited atoms

    International Nuclear Information System (INIS)

    Shirai, T.; Nakai, Y.; Nakamura, H.

    1979-01-01

    Approximate analytical expressions are derived for the ionization cross sections in the high- and low-collision-energy limits using the improved impulse approximation based on the assumption that the electron-atom inelastic-scattering amplitude is a function only of the momentum transfer. Both cases of simultaneous excitation and de-excitation of one of the atoms are discussed. The formulas are applied to the collisions between two excited hydrogen atoms and are found very useful for estimating the cross sections in the wide range of collisions energies

  19. High surface area silicon materials: fundamentals and new technology.

    Science.gov (United States)

    Buriak, Jillian M

    2006-01-15

    Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

  20. High-performance silicon nanowire bipolar phototransistors

    Science.gov (United States)

    Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

    2016-07-01

    Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

  1. Review of high excitation energy structures in heavy ion collisions: target excitations and three body processes

    International Nuclear Information System (INIS)

    Frascaria, N.

    1987-09-01

    A review of experimental results on high excitation energy structures in heavy ion inelastic scattering is presented. The contribution to the spectra of the pick-up break-up mechanism is discussed in the light of the data obtained with light heavy ion projectiles. Recent results obtained with 40 Ar beams at various energies will show that target excitations contribute strongly to the measured cross section

  2. Compton scattering artifacts in electron excited X-ray spectra measured with a silicon drift detector.

    Science.gov (United States)

    Ritchie, Nicholas W M; Newbury, Dale E; Lindstrom, Abigail P

    2011-12-01

    Artifacts are the nemesis of trace element analysis in electron-excited energy dispersive X-ray spectrometry. Peaks that result from nonideal behavior in the detector or sample can fool even an experienced microanalyst into believing that they have trace amounts of an element that is not present. Many artifacts, such as the Si escape peak, absorption edges, and coincidence peaks, can be traced to the detector. Others, such as secondary fluorescence peaks and scatter peaks, can be traced to the sample. We have identified a new sample-dependent artifact that we attribute to Compton scattering of energetic X-rays generated in a small feature and subsequently scattered from a low atomic number matrix. It seems likely that this artifact has not previously been reported because it only occurs under specific conditions and represents a relatively small signal. However, with the advent of silicon drift detectors and their utility for trace element analysis, we anticipate that more people will observe it and possibly misidentify it. Though small, the artifact is not inconsequential. Under some conditions, it is possible to mistakenly identify the Compton scatter artifact as approximately 1% of an element that is not present.

  3. High mechanical Q-factor measurements on silicon bulk samples

    Energy Technology Data Exchange (ETDEWEB)

    Nawrodt, R; Zimmer, A; Koettig, T; Schwarz, C; Heinert, D; Hudl, M; Neubert, R; Thuerk, M; Nietzsche, S; Vodel, W; Seidel, P [Friedrich-Schiller-Universitaet, Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, A [Friedrich-Schiller-Universitaet, Institut fuer Angewandte Physik, Max-Wien-Platz 1, D-07743 Jena (Germany)], E-mail: ronny.nawrodt@uni-jena.de

    2008-07-15

    Future gravitational wave detectors will be limited by different kinds of noise. Thermal noise from the coatings and the substrate material will be a serious noise contribution within the detection band of these detectors. Cooling and the use of a high mechanical Q-factor material as a substrate material will reduce the thermal noise contribution from the substrates. Silicon is one of the most interesting materials for a third generation cryogenic detector. Due to the fact that the coefficient of thermal expansion vanishes at 18 and 125 K the thermoelastic contribution to the thermal noise will disappear. We present a systematic analysis of the mechanical Q-factor at low temperatures between 5 and 300 K on bulk silicon (100) samples which are boron doped. The thickness of the cylindrical samples is varied between 6, 12, 24, and 75mm with a constant diameter of 3 inches. For the 75mm substrate a comparison between the (100) and the (111) orientation is presented. In order to obtain the mechanical Q-factor a ring-down measurement is performed. Thus, the substrate is excited to resonant vibrations by means of an electrostatic driving plate and the subsequent ring-down is recorded using a Michelson-like interferometer. The substrate itself is suspended as a pendulum by means of a tungsten wire loop. All measurements are carried out in a special cryostat which provides a temperature stability of better than 0.1K between 5 and 300K during the experiment. The influence of the suspension on the measurements is experimentally investigated and discussed. At 5.8K a highest Q-factor of 4.5 x 10{sup 8} was achieved for the 14.9 kHz mode of a silicon (100) substrate with a diameter of 3 inches and a thickness of 12 mm.

  4. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  5. High temperature deformation of silicon steel

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Calvillo, Pablo, E-mail: pablo.rodriguez@ctm.com.es [CTM - Technologic Centre, Materials Technology Area, Manresa, Cataluna (Spain); Department of Materials Science and Metallurgical Engineering, Universidad Politecnica de Cataluna, Barcelona (Spain); Houbaert, Yvan, E-mail: Yvan.Houbaert@UGent.be [Department of Materials Science and Engineering, University of Ghent (Belgium); Petrov, Roumen, E-mail: Roumen.Petrov@ugent.be [Department of Materials Science and Engineering, University of Ghent (Belgium); Kestens, Leo, E-mail: Leo.kestens@ugent.be [Department of Materials Science and Engineering, University of Ghent (Belgium); Colas, Rafael, E-mail: rafael.colas@uanl.edu.mx [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia, Universidad Autonoma de Nuevo Leon (Mexico)

    2012-10-15

    The microstructure and texture development during high temperature plane strain compression of 2% in weight silicon steel was studied. The tests were carried out at a constant strain rate of 5 s{sup -1} with reductions of 25, 35 and 75% at temperatures varying from 800 to 1100 Degree-Sign C. The changes in microstructure and texture were studied by means of scanning electron microscopy and electron backscattered diffraction. The microstructure close to the surface of the samples was equiaxed, which is attributed to the shear caused by friction, whereas that at the centre of the specimens was made of a mixture of elongated and fine equiaxed grains, the last ones attributed to the action of dynamic recovery followed by recrystallization. It was found that the volume fraction of these equiaxed grains augmented as reduction and temperature increased; a 0.7 volume fraction was accomplished with a 75% reduction at 1100 Degree-Sign C. The texture of the equiaxed and elongated grains was found to vary with the increase of deformation and temperature, as the {gamma}-fibre tends to disappear and the {alpha}-fibre to increase towards the higher temperature range. -- Highlights: Black-Right-Pointing-Pointer The plastic deformation of a silicon containing steel is studied by plane strain compression. Black-Right-Pointing-Pointer Equiaxed and elongated grains develop in different regions of the sample due to recrystallization. Black-Right-Pointing-Pointer Texture, by EBSD, is revealed to be similar in either type of grains.

  6. High temperature deformation of silicon steel

    International Nuclear Information System (INIS)

    Rodríguez-Calvillo, Pablo; Houbaert, Yvan; Petrov, Roumen; Kestens, Leo; Colás, Rafael

    2012-01-01

    The microstructure and texture development during high temperature plane strain compression of 2% in weight silicon steel was studied. The tests were carried out at a constant strain rate of 5 s −1 with reductions of 25, 35 and 75% at temperatures varying from 800 to 1100 °C. The changes in microstructure and texture were studied by means of scanning electron microscopy and electron backscattered diffraction. The microstructure close to the surface of the samples was equiaxed, which is attributed to the shear caused by friction, whereas that at the centre of the specimens was made of a mixture of elongated and fine equiaxed grains, the last ones attributed to the action of dynamic recovery followed by recrystallization. It was found that the volume fraction of these equiaxed grains augmented as reduction and temperature increased; a 0.7 volume fraction was accomplished with a 75% reduction at 1100 °C. The texture of the equiaxed and elongated grains was found to vary with the increase of deformation and temperature, as the γ-fibre tends to disappear and the α-fibre to increase towards the higher temperature range. -- Highlights: ► The plastic deformation of a silicon containing steel is studied by plane strain compression. ► Equiaxed and elongated grains develop in different regions of the sample due to recrystallization. ► Texture, by EBSD, is revealed to be similar in either type of grains.

  7. Production of high specific activity silicon-32

    International Nuclear Information System (INIS)

    Phillips, D.R.; Brzezinski, M.A.

    1998-01-01

    This is the final report of a three-year, Laboratory Directed Research and Development Project (LDRD) at Los Alamos National Laboratory (LANL). There were two primary objectives for the work performed under this project. The first was to take advantage of capabilities and facilities at Los Alamos to produce the radionuclide 32 Si in unusually high specific activity. The second was to combine the radioanalytical expertise at Los Alamos with the expertise at the University of California to develop methods for the application of 32 Si in biological oceanographic research related to global climate modeling. The first objective was met by developing targetry for proton spallation production of 32 Si in KCl targets and chemistry for its recovery in very high specific activity. The second objective was met by developing a validated field-useable, radioanalytical technique, based upon gas-flow proportional counting, to measure the dynamics of silicon uptake by naturally occurring diatoms

  8. Microcapillary Features in Silicon Alloyed High-Strength Cast Iron

    Directory of Open Access Journals (Sweden)

    R.K. Hasanli

    2017-04-01

    Full Text Available Present study explores features of silicon micro capillary in alloyed high-strength cast iron with nodular graphite (ductile iron produced in metal molds. It identified the nature and mechanism of micro liquation of silicon in a ductile iron alloyed with Nickel and copper, and demonstrated significant change of structural-quality characteristics. It was concluded that the matrix of alloyed ductile iron has a heterogeneous structure with cross reinforcement and high-silicon excrement areas.

  9. Direct writing of sub-wavelength ripples on silicon using femtosecond laser at high repetition rate

    International Nuclear Information System (INIS)

    Xie, Changxin; Li, Xiaohong; Liu, Kaijun; Zhu, Min; Qiu, Rong; Zhou, Qiang

    2016-01-01

    Graphical abstract: - Highlights: • The NSRs and DSRs are obtained on silicon surface. • With increasing direct writing speed, the NSRs suddenly changes and becomes the DSRs. • We develop a Sipe–Drude interference theory by considering the thermal excitation. - Abstract: The near sub-wavelength and deep sub-wavelength ripples on monocrystalline silicon were formed in air by using linearly polarized and high repetition rate femtosecond laser pulses (f = 76 MHz, λ = 800 nm, τ = 50 fs). The effects of laser pulse energy, direct writing speed and laser polarization on silicon surface morphology are studied. When the laser pulse energy is 2 nJ/pulse and the direct writing speed varies from 10 to 25 mm/s, the near sub-wavelength ripples (NSRs) with orientation perpendicular to the laser polarization are generated. While the direct writing speed reaches 30 mm/s, the direction of the obtained deep sub-wavelength ripples (DSRs) suddenly changes and becomes parallel to the laser polarization, rarely reported so far for femtosecond laser irradiation of silicon. Meanwhile, we extend the Sipe–Drude interference theory by considering the thermal excitation, and numerically calculate the efficacy factor for silicon irradiated by femtosecond laser pulses. The revised Sipe–Drude interference theoretical results show good agreement with the periods and orientations of sub-wavelength ripples.

  10. High Detectivity Graphene-Silicon Heterojunction Photodetector.

    Science.gov (United States)

    Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

    2016-02-03

    A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Ionization of highly excited atoms by atomic particle impact

    International Nuclear Information System (INIS)

    Smirnov, B.M.

    1976-01-01

    The ionization of a highly excited atom by a collision with an atom or molecule is considered. The theory of these processes is presented and compared with experimental data. Cross sections and ionization potential are discussed. 23 refs

  12. Silicon dioxide etching process for fabrication of micro-optics employing pulse-modulated electron-beam-excited plasma

    International Nuclear Information System (INIS)

    Takeda, Keigo; Ohta, Takayuki; Ito, Masafumi; Hori, Masaru

    2006-01-01

    Silicon dioxide etching process employing a pulse-modulated electron-beam-excited plasma (EBEP) has been developed for a fabrication process of optical micro-electro-mechanical systems (MEMSs). Nonplanar dielectric materials were etched by using self-bias induced by the electron beam generating the plasma. In order to investigate the effect of pulse modulation on electron beam, plasma diagnostics were carried out in the EBEP employing C 4 F 8 gas diluted with Ar gas by using a Langmuir single probe and time resolved optical emission spectroscopy. It was found that the pulse-modulated EBEP has an excellent potential to reduce the plasma-induced thermal damage on a photoresist film on a substrate to get the uniform etching and the anisotropic SiO 2 etching in comparison with the conventional EBEP. The pulse-modulated EBEP enabled us to get the high etch rate of SiO 2 of 375 nm/min without any additional bias power supply. Furthermore, the microfabrication on the core area of optical fiber was realized. These results indicate that the pulse-modulated EBEP will be a powerful tool for the application to optical MEMS process

  13. Excitation of plasmon modes in a graphene monolayer supported on a 2D subwavelength silicon grating

    DEFF Research Database (Denmark)

    Zhu, Xiaolong; Yan, Wei; Jepsen, Peter Uhd

    2013-01-01

    Graphene is a two-dimensional (2D) carbon-based material, whose unique electronic and optical properties have attracted a great deal of research interest. Despite the fact that graphene is an atomically thin layer the optical absorption of a single layer can be as high as 2.3% (defined by the fine...... structure constant). Nevertheless, for light-matter interactions this number is imposing challenges and restrictions for graphene-based optoelectronic devices. One promising way to enhance optical absorption is to excite graphene-plasmon polaritons (GPPs) supported by graphene....

  14. High speed all-silicon optical modulator

    International Nuclear Information System (INIS)

    Marris-Morini, Delphine; Le Roux, Xavier; Pascal, Daniel; Vivien, Laurent; Cassan, Eric; Fedeli, Jean Marc; Damlencourt, Jean Francois; Bouville, David; Palomo, Jose; Laval, Suzanne

    2006-01-01

    Electrorefractive effect is experimentally demonstrated in an all-silicon optical structure. A highly doped Si P + layer is embedded in the intrinsic region of a PIN diode integrated in a SOI waveguide. Holes are confined at equilibrium around the P + layer. By applying a reverse bias to the diode, electrical field sweeps the carriers out of the active region. Free carrier concentration variations are responsible for local refractive index variations leading to an effective index variation of the waveguide optical mode and to an optical absorption variation. As a figure of merit, the product V π L π , determined from the measured effective index variation, is equal to 3.1 V cm. Furthermore, the device performances have theoretically been investigated. Estimations show that V π L π as small as 1 V cm are feasible using optimized structures. Response times lower than 2 ps are predicted, which gives the possibility to achieve very high-speed modulation. Furthermore, a temperature increases from 300 to 400 K does not change the index variation amplitude, and despite the carrier mobility reduction, response times are still lower than 2 ps

  15. Breakdown of highly excited oxygen in a DC electric field

    International Nuclear Information System (INIS)

    Vagin, N.P.; Ionin, A.A.; Klimachev, Yu.M.; Sinitsin, D.V.; Yuryshev, N.N.; Deryugin, A.A.; Kochetov, I.V.; Napartovich, A.P.

    2000-01-01

    The breakdown of oxygen in a dc electric field is studied. A high concentration of oxygen molecules in the a 1 Δ g excited state is obtained in a purely chemical reactor. A decrease in the breakdown voltage at degrees of excitation exceeding 50% is observed. The theoretical decrement in the breakdown voltage obtained by solving the Boltzmann equation is in good agreement with the experimental data

  16. Hydrophilic functionalized silicon nanoparticles produced by high energy ball milling

    Science.gov (United States)

    Hallmann, Steffen

    The mechanochemical synthesis of functionalized silicon nanoparticles using High Energy Ball Milling (HEBM) is described. This method facilitates the fragmentation of mono crystalline silicon into the nanometer regime and the simultaneous surface functionalization of the formed particles. The surface functionalization is induced by the reaction of an organic liquid, such as alkynes and alkenes with reactive silicon sites. This method can be applied to form water soluble silicon nanoparticles by lipid mediated micelle formation and the milling in organic liquids containing molecules with bi-functional groups, such as allyl alcohol. Furthermore, nanometer sized, chloroalkyl functionalized particles can be synthesized by milling the silicon precursor in the presence of an o-chloroalkyne with either alkenes or alkynes as coreactants. This process allows tuning of the concentration of the exposed, alkyl linked chloro groups, simply by varying the relative amounts of the coreactant. The silicon nanoparticles that are formed serve as the starting point for a wide variety of chemical reactions, which may be used to alter the surface properties of the functionalized nanoparticles. Finally, the use of functionalized silicon particles for the production of superhydrophobic films is described. Here HEBM proves to be an efficient method to produce functionalized silicon particles, which can be deposited to form a stable coating exhibiting superhydrophobic properties. The hydrophobicity of the silicon film can be tuned by the milling time and thus the resulting surface roughness of the films.

  17. Selective excitation of atoms or molecules to high-lying states

    International Nuclear Information System (INIS)

    Ducas, T.W.

    1978-01-01

    This specification relates to the selective excitation of atoms or molecules to high lying states and a method of separating different isotopes of the same element by selective excitation of the isotopes. (U.K.)

  18. Dinamical polarizability of highly excited hydrogen-like states

    International Nuclear Information System (INIS)

    Delone, N.B.; Krajnov, V.P.

    1982-01-01

    Analytic expressions are derived for the dynamic polarizability of highly excited hydrogen-like atomic states. It is shown that in the composite matrix element which determines the dynamic polarizability there is a strong compensation of the terms as a result of which the resulting magnitude of the dynamic polarizability is quasiclasically small compared to the individual terms of the composite matrix. It is concluded that the resonance behaviour of the dynamic polarizability of highly excited states differs significantly from the resonance behaviour of the polarizability for the ground and low-lying atomic states. The static limit and high-frequency limit of on electromagnetic field are considered

  19. El strength function at high spin and excitation energy

    International Nuclear Information System (INIS)

    Barrette, J.

    1983-04-01

    Recently giant dipole resonance-like concentration of the dipole strength function in nuclei was observed at both high excitation energies and high spins. This observation raises the possibility of obtaining new information on the shape of rapidly rotating heated nuclei. Recent experimental results on this subject are reviewed

  20. Silicon Photomultiplier Performance in High ELectric Field

    Science.gov (United States)

    Montoya, J.; Morad, J.

    2016-12-01

    Roughly 27% of the universe is thought to be composed of dark matter. The Large Underground Xenon (LUX) relies on the emission of light from xenon atoms after a collision with a dark matter particle. After a particle interaction in the detector, two things can happen: the xenon will emit light and charge. The charge (electrons), in the liquid xenon needs to be pulled into the gas section so that it can interact with gas and emit light. This allows LUX to convert a single electron into many photons. This is done by applying a high voltage across the liquid and gas regions, effectively ripping electrons out of the liquid xenon and into the gas. The current device used to detect photons is the photomultiplier tube (PMT). These devices are large and costly. In recent years, a new technology that is capable of detecting single photons has emerged, the silicon photomultiplier (SiPM). These devices are cheaper and smaller than PMTs. Their performance in a high electric fields, such as those found in LUX, are unknown. It is possible that a large electric field could introduce noise on the SiPM signal, drowning the single photon detection capability. My hypothesis is that SiPMs will not observe a significant increase is noise at an electric field of roughly 10kV/cm (an electric field within the range used in detectors like LUX). I plan to test this hypothesis by first rotating the SiPMs with no applied electric field between two metal plates roughly 2 cm apart, providing a control data set. Then using the same angles test the dark counts with the constant electric field applied. Possibly the most important aspect of LUX, is the photon detector because it's what detects the signals. Dark matter is detected in the experiment by looking at the ratio of photons to electrons emitted for a given interaction in the detector. Interactions with a low electron to photon ratio are more like to be dark matter events than those with a high electron to photon ratio. The ability to

  1. Self-Healing, High-Permittivity Silicone Dielectric Elastomer

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

    2016-01-01

    possesses high dielectric permittivity and consists of an interpenetrating polymer network of silicone elastomer and ionic silicone species that are cross-linked through proton exchange between amines and acids. The ionically cross-linked silicone provides self-healing properties after electrical breakdown...... or cuts made directly to the material due to the reassembly of the ionic bonds that are broken during damage. The dielectric elastomers presented in this paper pave the way to increased lifetimes and the ability of dielectric elastomers to survive millions of cycles in high-voltage conditions....

  2. Studies on linear, nonlinear optical and excited state dynamics of silicon nanoparticles prepared by picosecond laser ablation

    Directory of Open Access Journals (Sweden)

    Syed Hamad

    2015-12-01

    Full Text Available We report results from our studies on the fabrication and characterization of silicon (Si nanoparticles (NPs and nanostructures (NSs achieved through the ablation of Si target in four different liquids using ∼2 picosecond (ps pulses. The consequence of using different liquid media on the ablation of Si target was investigated by studying the surface morphology along with material composition of Si based NPs. The recorded mean sizes of these NPs were ∼9.5 nm, ∼37 nm, ∼45 nm and ∼42 nm obtained in acetone, water, dichloromethane (DCM and chloroform, respectively. The generated NPs were characterized by selected area electron diffraction (SAED, high resolution transmission microscopy (HRTEM, Raman spectroscopic techniques and Photoluminescence (PL studies. SAED, HRTEM and Raman spectroscopy data confirmed that the material composition was Si NPs in acetone, Si/SiO2 NPs in water, Si-C NPs in DCM and Si-C NPs in chloroform and all of them were confirmed to be polycrystalline in nature. Surface morphological information of the fabricated Si substrates was obtained using the field emission scanning electron microscopic (FESEM technique. FESEM data revealed the formation of laser induced periodic surface structures (LIPSS for the case of ablation in acetone and water while random NSs were observed for the case of ablation in DCM and chloroform. Femtosecond (fs nonlinear optical properties and excited state dynamics of these colloidal Si NPs were investigated using the Z-scan and pump-probe techniques with ∼150 fs (100 MHz and ∼70 fs (1 kHz laser pulses, respectively. The fs pump-probe data obtained at 600 nm consisted of single and double exponential decays which were tentatively assigned to electron-electron collisional relaxation (1 ps. Large third order optical nonlinearities (∼10−14 e.s.u. for these colloids have been estimated from Z-scan data at an excitation wavelength of 680 nm suggesting that the colloidal Si NPs find

  3. Studies on linear, nonlinear optical and excited state dynamics of silicon nanoparticles prepared by picosecond laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Hamad, Syed; Nageswara Rao, S. V. S.; Pathak, A. P. [School of Physics, University of Hyderabad, Hyderabad 500046, Telangana (India); Krishna Podagatlapalli, G.; Mounika, R.; Venugopal Rao, S., E-mail: soma-venu@yahoo.com, E-mail: soma-venu@uohyd.ac.in [Advanced Center of Research in High Energy Materials (ACRHEM), University of Hyderabad, Hyderabad 500046, Telangana (India)

    2015-12-15

    We report results from our studies on the fabrication and characterization of silicon (Si) nanoparticles (NPs) and nanostructures (NSs) achieved through the ablation of Si target in four different liquids using ∼2 picosecond (ps) pulses. The consequence of using different liquid media on the ablation of Si target was investigated by studying the surface morphology along with material composition of Si based NPs. The recorded mean sizes of these NPs were ∼9.5 nm, ∼37 nm, ∼45 nm and ∼42 nm obtained in acetone, water, dichloromethane (DCM) and chloroform, respectively. The generated NPs were characterized by selected area electron diffraction (SAED), high resolution transmission microscopy (HRTEM), Raman spectroscopic techniques and Photoluminescence (PL) studies. SAED, HRTEM and Raman spectroscopy data confirmed that the material composition was Si NPs in acetone, Si/SiO{sub 2} NPs in water, Si-C NPs in DCM and Si-C NPs in chloroform and all of them were confirmed to be polycrystalline in nature. Surface morphological information of the fabricated Si substrates was obtained using the field emission scanning electron microscopic (FESEM) technique. FESEM data revealed the formation of laser induced periodic surface structures (LIPSS) for the case of ablation in acetone and water while random NSs were observed for the case of ablation in DCM and chloroform. Femtosecond (fs) nonlinear optical properties and excited state dynamics of these colloidal Si NPs were investigated using the Z-scan and pump-probe techniques with ∼150 fs (100 MHz) and ∼70 fs (1 kHz) laser pulses, respectively. The fs pump-probe data obtained at 600 nm consisted of single and double exponential decays which were tentatively assigned to electron-electron collisional relaxation (<1 ps) and non-radiative transitions (>1 ps). Large third order optical nonlinearities (∼10{sup −14} e.s.u.) for these colloids have been estimated from Z-scan data at an excitation wavelength of 680 nm

  4. Ultra-high-speed Optical Signal Processing using Silicon Photonics

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

    with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

  5. Brain inspired high performance electronics on flexible silicon

    KAUST Repository

    Sevilla, Galo T.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2014-01-01

    Brain's stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components

  6. Iron solubility in highly boron-doped silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

    1998-01-01

    We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

  7. Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

    International Nuclear Information System (INIS)

    Casse, G.; Glaser, M.; Lemeilleur, F.; Ruzin, A.; Wegrzecki, M.

    1999-01-01

    The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentration (>10 17 atoms cm -3 ) cannot readily be achieved during the FZ silicon refinement. The diffusion of oxygen at elevated temperatures from a SiO 2 layer grown on both sides of a silicon wafer is a simple and effective technique to achieve high and uniform concentrations of oxygen throughout the bulk of a 300 μm thick silicon wafer

  8. Process development for high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gee, J.M.; Basore, P.A.; Buck, M.E.; Ruby, D.S.; Schubert, W.K.; Silva, B.L.; Tingley, J.W.

    1991-12-31

    Fabrication of high-efficiency silicon solar cells in an industrial environment requires a different optimization than in a laboratory environment. Strategies are presented for process development of high-efficiency silicon solar cells, with a goal of simplifying technology transfer into an industrial setting. The strategies emphasize the use of statistical experimental design for process optimization, and the use of baseline processes and cells for process monitoring and quality control. 8 refs.

  9. High frequency guided wave propagation in monocrystalline silicon wafers

    OpenAIRE

    Pizzolato, M.; Masserey, B.; Robyr, J. L.; Fromme, P.

    2017-01-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full...

  10. Functional silicone copolymers and elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

    Dielectric elastomers (DEs) are a new and promising transducer technology and are often referred to as ‘artificial muscles’, due to their ability to undergo large deformations when stimulated by electric fields. DEs consist of a soft and thin elastomeric film sandwiched between compliant electrodes......, thereby forming a capacitor [1]. Silicone elastomers are one of the most used materials for DEs due to their high efficiency, fast response times and low viscous losses. The major disadvantage of silicone elastomers is that they possess relatively low dielectric permittivity, which means that a high...... electrical field is necessary to operate the DE. The necessary electrical field can be lowered by creating silicone elastomers with higher dielectric permittivity, i.e. with a higher energy density.The aim of this work is to create new and improved silicone elastomers with high dielectric permittivity...

  11. Development of large area, high efficiency amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

    1996-02-01

    The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

  12. Complex fragment emission at low and high excitation energy

    International Nuclear Information System (INIS)

    Moretto, L.G.

    1986-08-01

    Complex fragment emission has been certified as a compound nucleus process at low energies. An extension of the measurements to heavy ion reactions up to 50 MeV/u shows that most complex fragments are emitted by highly excited compound nuclei formed in incomplete fusion reactions. 12 refs., 26 figs

  13. Strange effects of strong high-frequency excitation

    DEFF Research Database (Denmark)

    Thomsen, Jon Juel

    2003-01-01

    Three general effects of mechanical high-frequency excitation (HFE) are described: Stiffening - an apparent change in the stiffness associated with an equilibrium; Biasing - a tendency for a system to move towards a particular state which does not exist or is unstable without HFE; and Smoothening...

  14. On the nature of highly vibrationally excited states of thiophosgene

    Indian Academy of Sciences (India)

    Understanding the nature of the highly excited molecu- lar eigenstates is equivalent to deciphering the mecha- nism of intramolecular vibrational energy redistribution. (IVR) occurring in the molecule.1 However, the assign- ment of eigenstates is far from simple. The existence of and interplay of several strong anharmonic ...

  15. 77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

    KAUST Repository

    Sallam, M. O.

    2011-07-01

    Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of U-turn that causes 180 phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 and excited with 90 phase shift. Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency. © 2011 IEEE.

  16. Corrosion of silicon nitride in high temperature alkaline solutions

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

    2016-08-01

    The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

  17. Fiber Optic Excitation of Silicon Microspheres in Amorphous and Crystalline Fluids

    NARCIS (Netherlands)

    Yilmaz, H.; Murib, M.S.; Serpenguzel, A.

    2016-01-01

    This study investigates the optical resonance spectra of free-standing monolithic single crystal silicon microspheres immersed in various amorphous fluids, such as air, water, ethylene glycol, and 4-Cyano-4’-pentylbiphenyl nematic liquid crystal. For the various amorphous fluids,

  18. Density-dependent phonoriton states in highly excited semiconductors

    International Nuclear Information System (INIS)

    Nguyen Hong Quang; Nguyen Minh Khue; Nguyen Que Huong

    1995-09-01

    The dynamical aspects of the phonoriton state in highly-photoexcited semiconductors is studied theoretically. The effect of the exciton-exciton interaction and nonbosonic character of high-density excitons are taken into account. Using Green's function method and within the Random Phase Approximation it is shown that the phonoriton dispersion and damping are very sensitive to the exciton density, characterizing the excitation degree of semiconductors. (author). 18 refs, 3 figs

  19. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

    2014-10-27

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  20. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    International Nuclear Information System (INIS)

    Martini, R.; Kepa, J.; Stesmans, A.; Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I.; Poortmans, J.

    2014-01-01

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  1. High-gain bipolar detector on float-zone silicon

    Science.gov (United States)

    Han, D. J.; Batignani, G.; Del Guerra, A.; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Giorgi, M.; Forti, F.

    2003-10-01

    Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be ˜7.77×10 4/s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83 μm has been observed for the same device.

  2. High-gain bipolar detector on float-zone silicon

    International Nuclear Information System (INIS)

    Han, D.J.; Batignani, G.; Guerra, A.D.A. Del; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Giorgi, M.; Forti, F.

    2003-01-01

    Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be ∼7.77x10 4 /s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83 μm has been observed for the same device

  3. Nonlinear phenomena in the highly excited state of C60

    International Nuclear Information System (INIS)

    Byrne, H.J.; Maser, W.K.; Kaiser, M.; Akselrod, L.; Anders, J.; Ruehle, W.W.; Zhou, X.Q.; Mittelbach, A.; Roth, S.

    1993-01-01

    Under high intensity illumination, the optical and electronic properties of fullerenes are seen to undergo dramatic, nonlinear changes. The photoluminescence emission is seen to increase with approximately the third power of the input intensity above an apparent threshold intensity. Associated with this nonlinear increase is the emergence of a long lifetime emission component and a redshifting of the emission spectrum. Above the threshold intensity the photoconductive response increases with approximately the cube of the input power. In the highly excited state, the photoconductive response becomes relatively temperature independent compared to the thermally activated behaviour observed at low intensities. The characteristics of the temperature dependence are associated with a metallic-like phase in the highly excited state and therefore an optically driven insulator to metal transition is proposed as a description of the observed phenomena. (orig.)

  4. High Tc Superconducting Magnet Excited by a Semiconductor Thermoelectric Element

    Science.gov (United States)

    Kuriyama, T.; Ono, M.; Tabe, S.; Oguchi, A.; Okamura, T.

    2006-04-01

    A high Tc superconducting (HTS) magnet excited by a thermal electromotive force of a thermoelectric element is studied. This HTS magnet has the advantages of compactness, lightweight and continuous excitation in comparison with conventional HTS magnets, because this HTS magnet does not need a large external power source. In this system, a heat input into the cryogenic environment is necessary to excite the thermoelectric element for constant operation. This heat generation, however, causes a rise in temperature of an HTS coil and reduces the system performance. In this paper, a newly designed magnet system which adopted a two-stage GM cryocooler was investigated. It enabled us to control the temperature of a thermoelectric element and that of an HTS coil independently. The temperature of the HTS coil could be kept at 10-20 K at the second stage of the GM cryocooler, while the thermoelectric element could be excited at higher temperature in the range of 50-70 K at the first stage, where the performance of the thermoelectric element was higher. The experimental results on this HTS magnet are shown and the possibility of the thermoelectric element as a main power source of the HTS magnets is discussed.

  5. Excitation of high density surface plasmon polariton vortex array

    Science.gov (United States)

    Kuo, Chun-Fu; Chu, Shu-Chun

    2018-06-01

    This study proposes a method to excite surface plasmon polariton (SPP) vortex array of high spatial density on metal/air interface. A doughnut vector beam was incident at four rectangularly arranged slits to excite SPP vortex array. The doughnut vector beam used in this study has the same field intensity distribution as the regular doughnut laser mode, TEM01* mode, but a different polarization distribution. The SPP vortex array is achieved through the matching of both polarization state and phase state of the incident doughnut vector beam with the four slits. The SPP field distribution excited in this study contains stable array-distributed time-varying optical vortices. Theoretical derivation, analytical calculation and numerical simulation were used to discuss the characteristics of the induced SPP vortex array. The period of the SPP vortex array induced by the proposed method had only half SPPs wavelength. In addition, the vortex number in an excited SPP vortex array can be increased by enlarging the structure.

  6. Silicon-embedded copper nanostructure network for high energy storage

    Science.gov (United States)

    Yu, Tianyue

    2016-03-15

    Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

  7. Silicon-embedded copper nanostructure network for high energy storage

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Tianyue

    2018-01-23

    Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

  8. The giant quadrupole resonance in highly excited rotating nuclei

    International Nuclear Information System (INIS)

    Civitarese, O.; Furui, S.; Ploszajczak, M.; Faessler, A.

    1983-01-01

    The giant quadrupole resonance in highly excited, fast rotating nuclei is studied as a function of both the nuclear temperature and the nuclear angular momentum. The photo-absorption cross sections for quadrupole radiation in 156 Dy, 160 Er and 164 Er are evaluated within the linear response theory. The strength functions of the γ-ray spectrum obtained from the decay of highly excited nuclear states by deexcitation of the isoscalar quadrupole mode show a fine structure, which depends on the temperature T, the angular momentum I and the deformation of the nucleus β. The splitting of the modes associated with the signature-conserving and signature-changing components of the quadrupole field is discussed. (orig.)

  9. Super soft silicone elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Hvilsted, Søren

    2015-01-01

    Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young’s modulus and increasing the dielectric permittivity of silicone...... elastomers. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. New soft elastomer matrices with high dielectric permittivity and low Young’s modulus, with no loss of mechanical stability, were prepared by two different...... approaches using chloropropyl-functional silicone polymers. The first approach was based on synthesised chloropropyl-functional copolymers that were cross-linkable and thereby formed the basis of new silicone networks with high dielectric permittivity (e.g. a 43% increase). These networks were soft without...

  10. High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

    Science.gov (United States)

    Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

    2016-06-01

    Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. New properties of giant resonances in highly excited nuclei

    International Nuclear Information System (INIS)

    Morsch, H.P.

    1991-01-01

    Studies on the giant dipole resonance in very hot nuclei investigated in heavy ion-induced particle-γ coincidence experiments are reviewed. A signature is found in the γ-decay of excited nuceli which shows direct decay of the giant dipole resonance. This provides a new dimension in giant resonance studies and the possibility to study the dependence of giant resonance energy, width and sum rule strength on excitation energy and rotation of the system. Further, the fact that the giant resonance splits in deformed nuclei provides a unique way to get information on the shape of hot nuclei. First results are obtained on the following questions: (i)What is the nuclear shape at high temperature (T≥2 MeV)? (ii)Is there a phase transition in the nuclear shape at T∼1.7 MeV? (iii)Does motional narrowing exist in hot nuclei? (author). 19 refs., 11 figs

  12. Calculations on the vibrational level density in highly excited formaldehyde

    International Nuclear Information System (INIS)

    Rashev, Svetoslav; Moule, David C.

    2003-01-01

    The object of the present work is to develop a model that provides realistic estimates of the vibrational level density in polyatomic molecules in a given electronic state, at very high (chemically relevant) vibrational excitation energies. For S 0 formaldehyde (D 2 CO), acetylene, and a number of triatomics, the estimates using conventional spectroscopic formulas have yielded densities at the dissociation threshold, very much lower than the experimentally measured values. In the present work we have derived a general formula for the vibrational energy levels of a polyatomic molecule, which is a generalization of the conventional Dunham spectroscopic expansion. Calculations were performed on the vibrational level density in S 0 D 2 CO, H 2 C 2 , and NO 2 at excitation energies in the vicinity of the dissociation limit, using the newly derived formula. The results from the calculations are in reasonable agreement with the experimentally measured data

  13. High power electron beam accelerators for gas laser excitation

    International Nuclear Information System (INIS)

    Kelly, J.G.; Martin, T.H.; Halbleib, J.A.

    1976-06-01

    A preliminary parameter investigation has been used to determine a possible design of a high-power, relativistic electron beam, transversely excited laser. Based on considerations of present and developing pulsed power technology, broad area diode physics and projected laser requirements, an exciter is proposed consisting of a Marx generator, pulse shaping transmission lines, radially converging ring diodes and a laser chamber. The accelerator should be able to deliver approximately 20 kJ of electron energy at 1 MeV to the 10 4 cm 2 cylindrical surface of a laser chamber 1 m long and 0.3 m in diameter in 24 ns with very small azimuthal asymmetry and uniform radial deposition

  14. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women' s Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

    2014-01-27

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  15. Design of a charge sensitive preamplifier on high resistivity silicon

    International Nuclear Information System (INIS)

    Radeka, V.; Rehak, P.; Rescia, S.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Strueder, L.; Kemmer, J.

    1987-01-01

    A low noise, fast charge sensitive preamplifier was designed on high resistivity, detector grade silicon. It is built at the surface of a fully depleted region of n-type silicon. This allows the preamplifier to be placed very close to a detector anode. The preamplifier uses the classical input cascode configuration with a capacitor and a high value resistor in the feedback loop. The output stage of the preamplifier can drive a load up to 20pF. The power dissipation of the preamplifier is 13mW. The amplifying elements are ''Single Sided Gate JFETs'' developed especially for this application. Preamplifiers connected to a low capacitance anode of a drift type detector should achieve a rise time of 20ns and have an equivalent noise charge (ENC), after a suitable shaping, of less than 50 electrons. This performance translates to a position resolution better than 3μm for silicon drift detectors. 6 refs., 9 figs

  16. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    Energy Technology Data Exchange (ETDEWEB)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  17. Neutron scattering investigation of magnetic excitations at high energy transfers

    International Nuclear Information System (INIS)

    Loong, C.K.

    1984-01-01

    With the advance of pulsed spallation neutron sources, neutron scattering investigation of elementary excitations in magnetic materials can now be extended to energies up to several hundreds of MeV. We have measured, using chopper spectrometers and time-of-flight techniques, the magnetic response functions of a series of d and f transition metals and compounds over a wide range of energy and momentum transfer. In PrO 2 , UO 2 , BaPrO 3 and CeB 6 we observed crystal-field transitions between the magnetic ground state and the excited levels in the energy range from 40 to 260 MeV. In materials exhibiting spin-fluctuation or mixed-valent character such as Ce 74 Th 26 , on the other hand, no sharp crystal-field lines but a broadened quasielastic magnetic peak was observed. The line width of the quasielastic component is thought to be connected to the spin-fluctuation energy of the 4f electrons. The significance of the neutron scattering results in relation to the ground state level structure of the magnetic ions and the spin-dynamics of the f electrons is discussed. Recently, in a study of the spin-wave excitations in itinerant magnetic systems, we have extended the spin-wave measurements in ferromagnetic iron up to about 160 MeV. Neutron scattering data at high energy transfers are of particular interest because they provide direct comparison with recent theories of itinerant magnetism. 26 references, 7 figures

  18. Simple processing of high efficiency silicon solar cells

    International Nuclear Information System (INIS)

    Hamammu, I.M.; Ibrahim, K.

    2006-01-01

    Cost effective photovoltaic devices have been an area research since the development of the first solar cells, as cost is the major factor in their usage. Silicon solar cells have the biggest share in the photovoltaic market, though silicon os not the optimal material for solar cells. This work introduces a simplified approach for high efficiency silicon solar cell processing, by minimizing the processing steps and thereby reducing cost. The suggested procedure might also allow for the usage of lower quality materials compared to the one used today. The main features of the present work fall into: simplifying the diffusion process, edge shunt isolation and using acidic texturing instead of the standard alkaline processing. Solar cells of 17% efficiency have been produced using this procedure. Investigations on the possibility of improving the efficiency and using less quality material are still underway

  19. High-Tc superconducting antenna-coupled microbolometer on silicon

    Science.gov (United States)

    Rice, Joseph P.; Grossman, Erich N.; Borcherdt, L. J.; Rudman, D. A.

    1994-05-01

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Tc superconductor YBa2Cu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 X 10-6 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 microsecond(s) , a responsivity of the 1000 V/W range, and a noise-equivalent power in the 10-12 W/Hz1/2 range at 1000 Hz.

  20. High-{Tc} superconducting antenna-coupled microbolometer on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Rice, J.P.; Grossman, E.N.; Borcherdt, L.J.; Rudman, D.A. [National Inst. of Standards and Technology, Boulder, CO (United States). Cryoelectronic Metrology Group

    1994-12-31

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-{Tc} superconductor YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 {times} 10{sup {minus}6} W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 {micro}s, a responsivity in the 1,000 V/W range, and a noise-equivalent power (NEP) in the 10{sup {minus}12} W/Hz{sup 1/2} range at 1,000 Hz.

  1. Excited Atoms and Molecules in High Pressure Gas Discharges

    International Nuclear Information System (INIS)

    Vuskovic, L.; Popovic, S.

    2003-01-01

    Various types of high-pressure non-thermal discharges are increasingly drawing attention in view of many interesting applications. These, partially ionized media in non-equilibrium state, tend to generate complex effects that are difficult to interpret without a detailed knowledge of elementary processes involved. Electronically excited molecules and atoms may play an important role as intermediate states in a wide range of atomic and molecular processes, many of which are important in high-pressure discharges. They can serve also as reservoirs of energy or as sources of high energy electrons either through the energy pooling or through superelastic collisions. By presenting the analysis of current situation on the processes involving excited atoms and molecules of interest for high-pressure gas discharges, we will attempt to draw attention on the insufficiency of available data. In the same time we will show how to circumvent this situation and still be able to develop accurate models and interpretations of the observed phenomena

  2. High-field EPR spectroscopy of thermal donors in silicon

    DEFF Research Database (Denmark)

    Dirksen, R.; Rasmussen, F.B.; Gregorkiewicz, T.

    1997-01-01

    Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual...

  3. Suppressing segregation in highly phosphorus doped silicon monolayers

    NARCIS (Netherlands)

    Keizer, Joris; Kölling, Sebastian; Koenraad, Paul; Simmons, Michelle Y.

    2015-01-01

    Sharply defined dopant profiles and low resistivity are highly desired qualities in the microelectronic industry, and more recently, in the development of an all epitaxial Si:P based quantum computer. In this work, we use thin (monolayers thick) room temperature grown silicon layers, so-called

  4. Direct Electroplating on Highly Doped Patterned Silicon Wafers

    NARCIS (Netherlands)

    Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

    Nickel thin films have been electrodeposited directly on highly doped silicon wafers after removal of the native oxide layer. These substrates conduct sufficiently well to allow deposition using a periferical electrical contact on the wafer. Films 2 μm thick were deposited using a nickel sulfamate

  5. Process Characterization of Electrical Discharge Machining of Highly Doped Silicon

    Science.gov (United States)

    2012-06-01

    of mechanism is shown in Figure 2 showing the wire feed panel where the spool of 5 (DiBitonto, et...Uno High efficiency boring of monocrystalline silicon ingot by EDM RAM Si (P-type) conductivity 0.01 ohm-cm 1mm Cu pipe electrode, rotating at

  6. High power terahertz induced carrier multiplication in Silicon

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Pedersen, Pernille Klarskov; Iwaszczuk, Krzysztof

    2015-01-01

    The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons....

  7. Multiphoton excitation and high-harmonics generation in topological insulator.

    Science.gov (United States)

    Avetissian, H K; Avetissian, A K; Avchyan, B R; Mkrtchian, G F

    2018-05-10

    Multiphoton interaction of coherent electromagnetic radiation with 2D metallic carriers confined on the surface of the 3D topological insulator is considered. A microscopic theory describing the nonlinear interaction of a strong wave and metallic carriers with many-body Coulomb interaction is developed. The set of integrodifferential equations for the interband polarization and carrier occupation distribution is solved numerically. Multiphoton excitation of Fermi-Dirac sea of 2D massless carriers is considered for a THz pump wave. It is shown that in the moderately strong pump wave field along with multiphoton interband/intraband transitions the intense radiation of high harmonics takes place.

  8. Excited baryon form factors at high Q2

    International Nuclear Information System (INIS)

    Paul Stoler; Gary Adams; Abdellah Ahmidouch; Chris Armstrong; K. Assamagan; Steven Avery; K. Baker; Peter Bosted; Volker Burkert; Jim Dunne; Tom Eden; Rolf Ent; V. Frolov; David Gaskell; P. Gueye; Wendy Hinton; Cynthia Keppel; Wooyoung Kim; Michael Klusman; Doug Koltenuk; David Mack; Richard Madey; David Meekins; Ralph Minehart; Joseph Mitchell; Hamlet Mkrtchyan; James Napolitano; Gabriel Niculescu; Ioana Niculescu; Mina Nozar; John Price; Paul Stoler; Vardan Tadevosyan; Liguang Tang; Michael Witkowski; Stephen Wood

    1998-01-01

    The role of resonance electroproduction at high Q 2 is discussed in the context of exclusive reactions, as well as the alternative theoretical models which are proposed to treat exclusive reactions in the few GeV 2 /c 2 region of momentum transfer. Jefferson Lab experiment 94-014, which measured the excitation of the Delta (1232) and S 11 (1535) via the reactions p(e,e ' p)pi 0 and p(e,e ' p)eta respectively at Q 2 ∼ 2.8 and 4 GeV 2 /c 2 is described, and the state of analysis reported

  9. Multiphoton excitation and high-harmonics generation in topological insulator

    Science.gov (United States)

    Avetissian, H. K.; Avetissian, A. K.; Avchyan, B. R.; Mkrtchian, G. F.

    2018-05-01

    Multiphoton interaction of coherent electromagnetic radiation with 2D metallic carriers confined on the surface of the 3D topological insulator is considered. A microscopic theory describing the nonlinear interaction of a strong wave and metallic carriers with many-body Coulomb interaction is developed. The set of integrodifferential equations for the interband polarization and carrier occupation distribution is solved numerically. Multiphoton excitation of Fermi–Dirac sea of 2D massless carriers is considered for a THz pump wave. It is shown that in the moderately strong pump wave field along with multiphoton interband/intraband transitions the intense radiation of high harmonics takes place.

  10. Collective and single-particle states at high excitation energy

    International Nuclear Information System (INIS)

    Van den Berg, A.M.; Van der Molen, H.K.T.; Harakeh, M.N.; Akimune, H.; Daito, I.; Fujimura, H.; Fujiwara, M.; Ihara, F.; Inomata, T.

    2000-01-01

    Complete text of publication follows. Damping of high-lying single-particle states was investigated by the study of proton decay from high-lying states in 91 Nb, populated by the 90 Zr(α,t) reaction with E α = 180 MeV. In addition to decay to the ground state of 90 Zr, semi-direct decay was observed to the low-lying (2 + and 3 - ) phonon states, confirming the conclusion from other experiments that these phonon states play an important role in the damping process of the single-particle states. Furthermore, the population and decay of Isobaric Analogue States of 91 Zr, which are located at an excitation energy of about 10 - 12 MeV in 91 Nb, has been studied in the same reaction. (author)

  11. The remarkably high excitation planetary nebula GC 6537.

    Science.gov (United States)

    Aller, L H; Hung, S; Feibelman, W A

    1999-05-11

    NGC 6537 is an unusually high excitation point symmetric planetary nebula with a rich spectrum. Its kinematical structures are of special interest. We are here primarily concerned with the high resolution spectrum as revealed by the Hamilton echelle Spectrograph at Lick Observatory (resolution approximately 0.2 A) and supplemented by UV and near-UV data. These extensive data permit a determination of interstellar extinction, plasma diagnostics, and ionic concentrations. The photoionization models that have been used successfully for many planetary nebulae are not entirely satisfactory here. The plasma electron temperature of a photoionization model cannot much exceed 20,000 K, but plasma diagnostics show that regions emitting radiation of highly ionized atoms such as [NeIV] and [NeV] are much hotter, showing that shock excitation must be important, as suggested by the remarkable kinematics of this object. Hence, instead of employing a strict photoionization model, we are guided by the nebular diagnostics, which reveal how electron temperature varies with ionization potential and accommodates density effects. The predictions of the photoionization model may be useful in estimating ionization correction factor. In effect, we have estimated the chemical composition by using both photoionization and shock considerations.

  12. Decay modes of high-lying excitations in nuclei

    International Nuclear Information System (INIS)

    Gales, S.

    1993-01-01

    Inelastic, charge-exchange and transfer reactions induced by hadronic probes at intermediate energies have revealed a rich spectrum of new high-lying modes embedded in the nuclear continuum. The investigation of their decay properties is believed to be a severe test of their microscopic structure as predicted by nuclear models. In addition the degree of damping of these simple modes in the nuclear continuum can be obtained by means of the measured branching ratios to the various decay channels as compared to statistical model calculations. As illustrative examples the decay modes of high-spin single-particle states and isovector resonances are discussed. (author) 23 refs.; 14 figs

  13. Radiation hardened high efficiency silicon space solar cell

    International Nuclear Information System (INIS)

    Garboushian, V.; Yoon, S.; Turner, J.

    1993-01-01

    A silicon solar cell with AMO 19% Beginning of Life (BOL) efficiency is reported. The cell has demonstrated equal or better radiation resistance when compared to conventional silicon space solar cells. Conventional silicon space solar cell performance is generally ∼ 14% at BOL. The Radiation Hardened High Efficiency Silicon (RHHES) cell is thinned for high specific power (watts/kilogram). The RHHES space cell provides compatibility with automatic surface mounting technology. The cells can be easily combined to provide desired power levels and voltages. The RHHES space cell is more resistant to mechanical damage due to micrometeorites. Micro-meteorites which impinge upon conventional cells can crack the cell which, in turn, may cause string failure. The RHHES, operating in the same environment, can continue to function with a similar crack. The RHHES cell allows for very efficient thermal management which is essential for space cells generating higher specific power levels. The cell eliminates the need for electrical insulation layers which would otherwise increase the thermal resistance for conventional space panels. The RHHES cell can be applied to a space concentrator panel system without abandoning any of the attributes discussed. The power handling capability of the RHHES cell is approximately five times more than conventional space concentrator solar cells

  14. Decomposition of silicon carbide at high pressures and temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Daviau, Kierstin; Lee, Kanani K. M.

    2017-11-01

    We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60 GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.

  15. Radiance limits of ceramic phosphors under high excitation fluxes

    Science.gov (United States)

    Lenef, Alan; Kelso, John; Zheng, Yi; Tchoul, Maxim

    2013-09-01

    Ceramic phosphors, excited by high radiance pump sources, offer considerable potential for high radiance conversion. Interestingly, thermodynamic arguments suggest that the radiance of the luminescent spot can even exceed that of the incoming light source. In practice, however, thermal quenching and (non-thermal) optical saturation limit the maximum attainable radiance of the luminescent source. We present experimental data for Ce:YAG and Ce:GdYAG ceramics in which these limits have been investigated. High excitation fluxes are achieved using laser pumping. Optical pumping intensities exceeding 100W/mm2 have been shown to produce only modest efficiency depreciation at low overall pump powers because of the short Ce3+ lifetime, although additional limitations exist. When pump powers are higher, heat-transfer bottlenecks within the ceramic and heat-sink interfaces limit maximum pump intensities. We find that surface temperatures of these laser-pumped ceramics can reach well over 150°C, causing thermal-quenching losses. We also find that in some cases, the loss of quantum efficiency with increasing temperature can cause a thermal run-away effect, resulting in a rapid loss in converted light, possibly over-heating the sample or surrounding structures. While one can still obtain radiances on the order of many W/mm2/sr, temperature quenching effects ultimately limit converted light radiance. Finally, we use the diffusion-approximation radiation transport models and rate equation models to simulate some of these nonlinear optical pumping and heating effects in high-scattering ceramics.

  16. High mechanical Q-factor measurements on silicon bulk material

    Energy Technology Data Exchange (ETDEWEB)

    Schwarz, Christian; Nawrodt, Ronny; Heinert, Daniel; Schroeter, Anja; Neubert, Ralf; Thuerk, Matthias; Vodel, Wolfgang; Seidel, Paul [Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, Andreas [Institut fuer Angewandte Physik, Albert-Einstein-Strasse 15, D-07745 Jena (Germany)

    2008-07-01

    The direct observation of gravitational waves is one of the biggest challenges in science. Current detectors are limited by different kinds of noise. One of the fundamental noise sources is thermal noise arising from the optical components. One of the most promising attempts to reduce the thermal noise contribution in future detectors will be the use of high Q-factor materials at cryogenic temperatures. Silicon seems to be the most interesting material due to its excellent optical and thermal properties. We present high Q-factor measurements on bulk samples of high purity silicon in a temperature range from 5 to 300 K. The sample dimensions vary between 76.2 mm x 12..75 mm. The Q-factor exceeds 4.10{sup 8} at 6 K. The influence of the crystal orientation, doping and the sample preparation on the Q-factor is discussed.

  17. Synthetic Strategies for High Dielectric Constant Silicone Elastomers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt

    synthetic strategies were developed in this Ph.D. thesis, in order to create silicone elastomers with high dielectric constants and thereby higher energy densities. The work focused on maintaining important properties such as dielectric loss, electrical breakdown strength and elastic modulus....... The methodology therefore involved chemically grafting high dielectric constant chemical groups onto the elastomer network, as this would potentially provide a stable elastomer system upon continued activation of the material. The first synthetic strategy involved the synthesis of a new type of cross...... extender’ that allowed for chemical modifications such as Cu- AAC. This route was promising for one-pot elastomer preparation and as a high dielectric constant additive to commercial silicone systems. The second approach used the borane-catalysed Piers-Rubinsztajn reaction to form spatially well...

  18. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    International Nuclear Information System (INIS)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-01-01

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

  19. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  20. High breakdown-strength composites from liquid silicone rubbers

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Zakaria, Shamsul Bin; Yu, Liyun

    2014-01-01

    In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially...

  1. High Performance Electronics on Flexible Silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-09-01

    Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and health monitoring systems that cannot be integrated with conventional wafer based complementary metal oxide semiconductor processes. Most of the current efforts to create flexible high performance devices are based on the use of organic semiconductors. However, inherent material\\'s limitations make them unsuitable for big data processing and high speed communications. The objective of my doctoral dissertation is to develop integration processes that allow the transformation of rigid high performance electronics into flexible ones while maintaining their performance and cost. In this work, two different techniques to transform inorganic complementary metal-oxide-semiconductor electronics into flexible ones have been developed using industry compatible processes. Furthermore, these techniques were used to realize flexible discrete devices and circuits which include metal-oxide-semiconductor field-effect-transistors, the first demonstration of flexible Fin-field-effect-transistors, and metal-oxide-semiconductors-based circuits. Finally, this thesis presents a new technique to package, integrate, and interconnect flexible high performance electronics using low cost additive manufacturing techniques such as 3D printing and inkjet printing. This thesis contains in depth studies on electrical, mechanical, and thermal properties of the fabricated devices.

  2. A high-temperature silicon-on-insulator stress sensor

    International Nuclear Information System (INIS)

    Wang Zheyao; Tian Kuo; Zhou Youzheng; Pan Liyang; Liu Litian; Hu Chaohong

    2008-01-01

    A piezoresistive stress sensor is developed using silicon-on-insulator (SOI) wafers and calibrated for stress measurement for high-temperature applications. The stress sensor consists of 'silicon-island-like' piezoresistor rosettes that are etched on the SOI layer. This eliminates leakage current and enables excellent electrical insulation at high temperature. To compensate for the measurement errors caused by the misalignment of the piezoresistor rosettes with respect to the crystallographic axes, an anisotropic micromachining technique, tetramethylammonium hydroxide etching, is employed to alleviate the misalignment issue. To realize temperature-compensated stress measurement, a planar diode is fabricated as a temperature sensor to decouple the temperature information from the piezoresistors, which are sensitive to both stress and temperature. Design, fabrication and calibration of the piezoresistors are given. SOI-related characteristics such as piezoresistive coefficients and temperature coefficients as well as the influence of the buried oxide layer are discussed in detail

  3. Silicone rubber curing by high intensity infrared radiation

    International Nuclear Information System (INIS)

    Huang, T.; Tsai, J.; Cherng, C.; Chen, J.

    1994-01-01

    A high-intensity (12 kW) and compact (80 cm) infrared heating oven for fast curing (12 seconds) of tube-like silicone rubber curing studies is reported. Quality inspection by DSC and DMA and results from pilot-scale curing oven all suggest that infrared heating provides a better way of vulcanization regarding to curing time, quality, cost, and spacing over conventional hot air heating. copyright 1995 American Institute of Physics

  4. High-efficiency concentrator silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

    1990-11-01

    This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

  5. Mesoporous Silicon-Based Anodes for High Capacity, High Performance Li-ion Batteries, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, the active anode...

  6. High aspect ratio channels in glass and porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liang, H.D. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Dang, Z.Y. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Wu, J.F. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Kan, J.A. van; Qureshi, S. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Ynsa, M.D.; Torres-Costa, V. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Centro de Micro-Análisis de Materiales (CMAM), Universidad Autónoma de Madrid, Campus de Cantoblanco Edif. 22, Faraday 3, E-28049 Madrid (Spain); Maira, A. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Venkatesan, T.V. [Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Breese, M.B.H., E-mail: phymbhb@nus.edu.sg [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

    2017-03-01

    We have developed a micromachining process to produce high-aspect-ratio channels and holes in glass and porous silicon. Our process utilizes MeV proton beam irradiation of silicon using direct writing with a focused beam, followed by electrochemical etching. To increase throughput we have also developed another process for large area ion irradiation based on a radiation-resistant gold surface mask, allowing many square inches to be patterned. We present a study of the achievable channel width, depth and period and sidewall verticality for a range of channels which can be over 100 μm deep or 100 nm wide with aspect ratios up to 80. This process overcomes the difficulty of machining glass on a micro- and nanometer scale which has limited many areas of applications in different fields such as microelectronics and microfluidics.

  7. Study of highly excited high spin states via the (HI, α) reaction

    International Nuclear Information System (INIS)

    Kubono, S.

    1982-01-01

    Three subjects are discussed in this paper. 1) The mechanism of (HI, α) reactions is briefly studied. 2) Possible excitation of molecular resonance states of 12 C- 12 C in 24 Mg through the 12 C( 16 O, α) 24 Mg reaction were investigated. A precise measurement of the level widths in 24 Mg did not support the previous report that the molecular states seen in 12 C + 12 C scattering had been excited in the transfer reaction 12 C( 16 O, α) 24 Mg. 3) Highly excited states in 28 Si, which have a large parentage of 12 C- 16 O, were also studied via the 12 C( 20 Ne, α) 28 Si reaction. An angular correlation measurement revealed the lowest 8 + and 10 + states at 14.00 and 15.97 MeV, respectively, which were selectively excited in the 12 C( 20 Ne, α) reaction. These results suggest a possible new band in 28 Si. (author)

  8. Fifth Stereoactive Orbital on Silicon: Relaxation of the Lowest Singlet Excited State of Octamethyltrisilane

    Czech Academy of Sciences Publication Activity Database

    MacLeod, M. K.; Kobr, L.; Michl, Josef

    2012-01-01

    Roč. 116, č. 43 (2012), s. 10507-10517 ISSN 1089-5639 Grant - others:NSF(US) CHE0848477 Institutional support: RVO:61388963 Keywords : density-functional theory * polysilane high polymers * zeta valence quality * Gaussian-basis sets * electronic-structure Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.771, year: 2012

  9. Properties of Highly Rotationally Excited H2 in Photodissociation Regions

    Science.gov (United States)

    Cummings, Sally Jane; Wan, Yier; Stancil, Phillip C.; Yang, Benhui H.; Zhang, Ziwei

    2018-06-01

    H2 is the dominant molecular species in the vast majority of interstellar environments and it plays a crucial role as a radiative coolant. In photodissociation regions, it is one of the primary emitters in the near to mid-infrared which are due to lines originating from highly excited rotational levels. However, collisional data for rotational levels j>10 are sparse, particularly for H2-H2 collisions. Utilizing new calculations for para-H2 and ortho-H2 collisional rate coefficients with H2 for j as high as 30, we investigate the effects of the new results in standard PDR models with the spectral simulation package Cloudy. We also perform Cloudy models of the Orion Bar and use Radex to explore rotational line ratio diagnostics. The resulting dataset of H2 collisional data should find wide application to other molecular environments. This work was support by Hubble Space Telescope grant HST-AR-13899.001-A and NASA grants NNX15AI61G and NNX16AF09G.

  10. Parity dependence of the nuclear level density at high excitation

    International Nuclear Information System (INIS)

    Rao, B.V.; Agrawal, H.M.

    1995-01-01

    The basic underlying assumption ρ(l+1, J)=ρ(l, J) in the level density function ρ(U, J, π) has been checked on the basis of high quality data available on individual resonance parameters (E 0 , Γ n , J π ) for s- and p-wave neutrons in contrast to the earlier analysis where information about p-wave resonance parameters was meagre. The missing level estimator based on the partial integration over a Porter-Thomas distribution of neutron reduced widths and the Dyson-Mehta Δ 3 statistic for the level spacing have been used to ascertain that the s- and p-wave resonance level spacings D(0) and D(1) are not in error because of spurious and missing levels. The present work does not validate the tacit assumption ρ(l+1, J)=ρ(l, J) and confirms that the level density depends upon parity at high excitation. The possible implications of the parity dependence of the level density on the results of statistical model calculations of nuclear reaction cross sections as well as on pre-compound emission have been emphasized. (orig.)

  11. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

  12. Diamond and silicon pixel detectors in high radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Tsung, Jieh-Wen

    2012-10-15

    Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

  13. Brain inspired high performance electronics on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2014-06-01

    Brain\\'s stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components [1], they can perform 1016 operations per second while consuming less power than an electrical light bulb. In order to perform the same amount of computation with today\\'s most advanced computers, the output of an entire power station would be needed. In that sense, to obtain brain like computation, ultra-fast devices with ultra-low power consumption will have to be integrated in extremely reduced areas, achievable only if brain folded structure is mimicked. Therefore, to allow brain-inspired computation, flexible and transparent platform will be needed to achieve foldable structures and their integration on asymmetric surfaces. In this work, we show a new method to fabricate 3D and planar FET architectures in flexible and semitransparent silicon fabric without comprising performance and maintaining cost/yield advantage offered by silicon-based electronics.

  14. Diamond and silicon pixel detectors in high radiation environments

    International Nuclear Information System (INIS)

    Tsung, Jieh-Wen

    2012-10-01

    Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10 16 particles per cm 2 , which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10 15 particles per cm 2 .

  15. Excitation and ionization of highly charged ions by electron impact

    International Nuclear Information System (INIS)

    Sampson, D.H.

    1989-01-01

    Two approaches for very rapid calculation of atomic data for high temperature plasma modeling have been developed. The first uses hydrogenic basis states and has been developed and applied in many papers discussed in previous progress reports. Hence, it is only briefly discussed here. The second is a very rapid, yet accurate, fully relativistic approach that has been developed over the past two or three years. It is described in more detail. Recently it has been applied to large scale production of atomic data. Specifically, it has been used to calculate relativistic distorted wave collision strengths and oscillator strengths for the following: all transitions from the ground level to the n=3 and 4 excited levels in the 71 Neon-like ions with nuclear charge number Z in the range 22 ≤ Z ≤ 92; all transitions among the 2s 1/2 , 2p 1/2 and 2p 3/2 levels and from them to all nlj levels with n=3,4 and 5 in the 85 Li-like ions with 8 ≤ Z ≤ 92; all transitions among the 3s 1/2 , 3p 3/2 , 3d 3/2 and 3d 5/2 levels and from them to all nlj levels with n=4 and 5 in the 71 Na-like ions with 22 ≤ Z ≤ 92; and all transitions among 4s 1/2 , 4p 1/2 , 4p 3/2 , 4d 3/2 , 4d 5/2 , 4f 5/2 and 4f 7/2 levels and from them to all nlj levels with n=5 in the 33 Cu-like ions with 60 ≤ Z ≤ 92. Also the program has been extended to give cross-sections for excitation to specific magnetic sublevels of the target ion by an electron beam and very recently it has been extended to give relativistic distorted wave cross sections for ionization of highly charged ions by electron impact

  16. High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

    Science.gov (United States)

    Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

  17. High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

    NARCIS (Netherlands)

    Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

    2005-01-01

    The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

  18. High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

    NARCIS (Netherlands)

    Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

    2004-01-01

    The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

  19. Neutron emission probability at high excitation and isospin

    International Nuclear Information System (INIS)

    Aggarwal, Mamta

    2005-01-01

    One-neutron and two-neutron emission probability at different excitations and varying isospin have been studied. Several degrees of freedom like deformation, rotations, temperature, isospin fluctuations and shell structure are incorporated via statistical theory of hot rotating nuclei

  20. Collective, stochastic and nonequilibrium behavior of highly excited hadronic matter

    Energy Technology Data Exchange (ETDEWEB)

    Carruthers, P [Los Alamos National Lab., NM (USA). Theoretical Div.

    1984-04-23

    We discuss selected problems concerning the dynamics and stochastic behavior of highly excited matter, particularly the QCD plasma. For the latter we consider the equation of state, kinetics, quasiparticles, flow properties and possible chaos and turbulence. The promise of phase space distribution functions for covariant transport and kinetic theory is stressed. The possibility and implications of a stochastic bag are spelled out. A simplified space-time model of hadronic collisions is pursued, with applications to A-A collisions and other matters. The domain wall between hadronic and plasma phase is of potential importance: its thickness and relation to surface tension is noticed. Finally, we review the recently developed stochastic cell model of multiparticle distributions and KNO scaling. This topic leads to the notion that fractional dimensions are involved in a rather general dynamical context. We speculate that various scaling phenomena are independent of the full dynamical structure, depending only on a general stochastic framework having to do with simple maps and strange attractors. 42 refs.

  1. Collective, stochastic and nonequilibrium behavior of highly excited hadronic matter

    International Nuclear Information System (INIS)

    Carruthers, P.

    1983-01-01

    We discuss selected problems concerning the dynamic and stochasticc behavior of highly excited matter, particularly the QCD plasma. For the latter we consider the equation of state, kinetics, quasiparticles, flow properties and possible chaos and turbulence. The promise of phase space distribution functions for covariant transport and kinetic theory is stressed. The possibility and implications of a stochastic bag are spelled out. A simplified space-time model of hadronic collisions is pursued, with applications to A-A collisions and other matters. The domain wall between hadronic and plasma phase is of potential importance: its thickness and relation to surface tension are noticed. Finally we reviewed the recently developed stochastic cell model of multiparticle distributions and KNO scaling. This topic leads to the notion that fractal dimensions are involved in a rather general dynamical context. We speculate that various scaling phenomena are independent of the full dynamical structure, depending only on a general stochastic framework having to do with simple maps and strange attractors. 42 references

  2. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    Science.gov (United States)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  3. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  4. Silicon sensors for trackers at high-luminosity environment

    Energy Technology Data Exchange (ETDEWEB)

    Peltola, Timo, E-mail: timo.peltola@helsinki.fi

    2015-10-01

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

  5. High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

    International Nuclear Information System (INIS)

    McNallan, M.

    1993-01-01

    Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

  6. Effects of DC bias on magnetic performance of high grades grain-oriented silicon steels

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Guang; Cheng, Ling [Global Energy Interconnection Research Institute, State Key Laboratory of Advanced Transmission Technology,Beijing 102211 (China); Lu, Licheng [State Grid Corporation of China, Beijing 100031 (China); Yang, Fuyao; Chen, Xin [Global Energy Interconnection Research Institute, State Key Laboratory of Advanced Transmission Technology,Beijing 102211 (China); Zhu, Chengzhi [State Grid Zhejiang Electric Power Company, Hangzhou 310007 (China)

    2017-03-15

    When high voltage direct current (HVDC) transmission adopting mono-polar ground return operation mode or unbalanced bipolar operation mode, the invasion of DC current into neutral point of alternating current (AC) transformer will cause core saturation, temperature increasing, and vibration acceleration. Based on the MPG-200D soft magnetic measurement system, the influence of DC bias on magnetic performance of 0.23 mm and 0.27 mm series (P{sub 1.7}=0.70–1.05 W/kg, B{sub 8}>1.89 T) grain-oriented (GO) silicon steels under condition of AC / DC hybrid excitation were systematically realized in this paper. For the high magnetic induction GO steels (core losses are the same), greater thickness can lead to stronger ability of resisting DC bias, and the reasons for it were analyzed. Finally, the magnetostriction and A-weighted magnetostriction velocity level of GO steel under DC biased magnetization were researched. - Highlights: • Magnetic properties of 0.23 mm and 0.27 mm series (P{sub 1.7}=0.70–1.05 W/kg, B{sub 8}>1.89 T) grain-oriented (GO) silicon steels under condition of AC / DC hybrid excitation were systematically analyzed. • Influence of DC biased magnetization on core loss, magnetostriction, and A-weighted magnetostriction velocity level of GO steel were researched. • Greater thickness and relatively lower magnetic induction (B{sub 8}>1.89 T yet) of GO steel can lead to stronger ability of resisting DC bias, and the reasons for it were analyzed.

  7. Charge transfer and excitation in high-energy ion-atom collisions

    International Nuclear Information System (INIS)

    Schlachter, A.S.; Berkner, K.H.; McDonald, R.J.

    1986-11-01

    Coincidence measurements of charge transfer and simultaneous projectile electron excitation provide insight into correlated two-electron processes in energetic ion-atom collisions. Projectile excitation and electron capture can occur simultaneously in a collision of a highly charged ion with a target atom; this process is called resonant transfer and excitation (RTE). The intermediate excited state which is thus formed can subsequently decay by photon emission or by Auger-electron emission. Results are shown for RTE in both the K shell of Ca ions and the L shell of Nb ions, for simultaneous projectile electron loss and excitation, and for the effect of RTE on electron capture

  8. Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

    Czech Academy of Sciences Publication Activity Database

    Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

    2016-01-01

    Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

  9. Realistic level densities in fragment emission at high excitation energies

    International Nuclear Information System (INIS)

    Mustafa, M.G.; Blann, M.; Ignatyuk, A.V.

    1993-01-01

    Heavy fragment emission from a 44 100 Ru compound nucleus at 400 and 800 MeV of excitation is analyzed to study the influence of level density models on final yields. An approach is used in which only quasibound shell-model levels are included in calculating level densities. We also test the traditional Fermi gas model for which there is no upper energy limit to the single particle levels. We compare the influence of these two level density models in evaporation calculations of primary fragment excitations, kinetic energies and yields, and on final product yields

  10. Consideration on excitation mechanisms in a high-power two-jet plasma

    International Nuclear Information System (INIS)

    Zaksas, Natalia P.; Gerasimov, Vladimir A.

    2013-01-01

    The study of excitation mechanisms in the region before the jet confluence of a high-power two-jet plasma used for analysis of different powders has been undertaken. Distribution of excited levels of Fe atoms and ions according to the Boltzmann population was found. Measuring Fe atomic and ionic excitation temperatures showed their considerable difference (≈ 2000–2500 K). The effect of argon on line intensities of a wide range of elements was investigated by the experiment with argon covering. A negligible effect of argon covering on line intensities of atoms with ionization energy of 8 eV was revealed. This is likely to be due to Penning ionization by metastable argon followed by ion recombination with an electron and stepwise de-excitations. A more pronounced effect of argon covering was observed for ionic lines of investigated elements with total excitation energy ranging from 11 to 21 eV. Penning ionization followed by electron impact is believed to be a probable mechanism for ion excitation. The contribution of metastable argon to excitation processes results in departure from local thermodynamic equilibrium and different atomic and ionic excitation temperatures. - Highlights: • Excitation mechanisms were investigated in a high-power TJP. • Boltzmann population of excited levels of Fe atoms and ions takes place. • The considerable difference in Fe atomic and ionic excitation temperatures occurs. • Argon covering was used to study the argon effect on line intensities. • Participation of metastable argon in atom ionization was shown

  11. Development of Silicon Detectors for the High Luminosity LHC

    International Nuclear Information System (INIS)

    Eichhorn, Thomas Valentin

    2015-07-01

    The Large Hadron Collider (LHC) at CERN will be upgraded to a High Luminosity LHC in the year 2022, increasing the instantaneous luminosity by a factor of five. This will have major impacts on the experiments at the LHC, such as the Compact Muon Solenoid (CMS) experiment, and especially for their inner silicon tracking systems. Among other things, the silicon sensors used therein will be exposed to unprecedented levels of radiation damage, necessitating a replacement of the entire tracking detector. In order to maintain the excellent current performance, a new tracking detector has to be equipped with sensors of increased radiation hardness and higher granularity. The CMS experiment is undertaking an extensive R and D campaign in the search for the future silicon sensor technology baseline to be used in this upgrade. This thesis presents two methods suitable for use in this search: finite element TCAD simulations and test beam measurements. The simulations are focussed on the interstrip capacitance between sensor strips and are compared to measurements before and after the inclusion of radiation damage effects. A geometrical representation of the strip sensors used in the campaign has been found, establishing the predictive power of simulations. The test beam measurements make use of the high-precision pixel telescopes available at the DESY-II test beam facility. The performance of these telescopes has been assessed and their achievable pointing resolution has been found to be below 2 μm. Thin, epitaxial silicon is a candidate material for usage in radiation hard sensors for the future CMS tracking detector. Sample strip sensors of this material have been irradiated to fluences of up to 1.3 x 10 16 n eq /cm 2 with 800 MeV or 23 GeV protons. Test beam measurements with 5 GeV electrons have been performed to investigate the radiation hardness of epitaxial sensors using the pixel beam telescopes. The epitaxial device under test (DUT) has been integrated into the

  12. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Directory of Open Access Journals (Sweden)

    Yulong Zhang

    2018-05-01

    Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  13. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Science.gov (United States)

    Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

    2018-05-01

    High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  14. The European BOOM project :silicon photonics for high-capacity optical packet routers

    NARCIS (Netherlands)

    Stampoulidis, L.; Vyrsokinos, K.; Voigt, K.; Zimmermann, L.; Gomez-Agis, F.; Dorren, H.J.S.; Sheng, Z.; Thourhout, Van D.; Moerl, L.; Kreissl, J.; Sedighi, B.; Scheytt, J.C.; Pagano, A.; Riccardi, E.

    2010-01-01

    During the past years, monolithic integration in InP has been the driving force for the realization of integrated photonic routing systems. The advent of silicon as a basis for cost-effective integration and its potential blend with III–V material is now opening exciting opportunities for the

  15. The development of high resolution silicon x-ray microcalorimeters

    Science.gov (United States)

    Porter, F. S.; Kelley, R. L.; Kilbourne, C. A.

    2005-12-01

    Recently we have produced x-ray microcalorimeters with resolving powers approaching 2000 at 5.9 keV using a spare XRS microcalorimeter array. We attached 400 um square, 8 um thick HgTe absorbers using a variety of attachment methods to an XRS array and ran the detector array at temperatures between 40 and 60 mK. The best results were for absorbers attached using the standard XRS absorber-pixel thermal isolation scheme utilizing SU8 polymer tubes. In this scenario we achieved a resolution of 3.2 eV FWHM at 5.9 keV. Substituting a silicon spacer for the SU8 tubes also yielded sub-4eV results. In contrast, absorbers attached directly to the thermistor produced significant position dependence and thus degraded resolution. Finally, we tested standard 640um-square XRS detectors at reduced bias power at 50mK and achieved a resolution of 3.7eV, a 50% improvement over the XRS flight instrument. Implanted silicon microcalorimeters are a mature flight-qualified technology that still has a substantial phase space for future development. We will discuss these new high resolution results, the various absorber attachment schemes, planned future improvements, and, finally, their relevance to future high resolution x-ray spectrometers including Constellation-X.

  16. Silicon nanowire based high brightness, pulsed relativistic electron source

    Directory of Open Access Journals (Sweden)

    Deep Sarkar

    2017-06-01

    Full Text Available We demonstrate that silicon nanowire arrays efficiently emit relativistic electron pulses under irradiation by a high-intensity, femtosecond, and near-infrared laser (∼1018 W/cm2, 25 fs, 800 nm. The nanowire array yields fluxes and charge per bunch that are 40 times higher than those emitted by an optically flat surface, in the energy range of 0.2–0.5 MeV. The flux and charge yields for the nanowires are observed to be directional in nature unlike that for planar silicon. Particle-in-cell simulations establish that such large emission is caused by the enhancement of the local electric fields around a nanowire, which consequently leads to an enhanced absorption of laser energy. We show that the high-intensity contrast (ratio of picosecond pedestal to femtosecond peak of the laser pulse (10−9 is crucial to this large yield. We extend the notion of surface local-field enhancement, normally invoked in low-order nonlinear optical processes like second harmonic generation, optical limiting, etc., to ultrahigh laser intensities. These electron pulses, expectedly femtosecond in duration, have potential application in imaging, material modification, ultrafast dynamics, terahertz generation, and fast ion sources.

  17. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  18. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

    2013-01-01

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  19. Denuded zone in Czochralski silicon wafer with high carbon content

    International Nuclear Information System (INIS)

    Chen Jiahe; Yang Deren; Ma Xiangyang; Que Duanlin

    2006-01-01

    The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 deg. C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 deg. C. Also, the DZs above 15 μm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits

  20. Denuded zone in Czochralski silicon wafer with high carbon content

    Science.gov (United States)

    Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Que, Duanlin

    2006-12-01

    The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 °C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 °C. Also, the DZs above 15 µm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits.

  1. Study of high-j neutron excitations outside 136Xe

    Science.gov (United States)

    Talwar, R.; Kay, B. P.; Mitchell, A. J.; Adachi, S.; Entwisle, J. P.; Fujita, Y.; Gey, G.; Noji, S.; Ong, H. J.; Schiffer, J. P.; Tamii, A.

    2017-09-01

    The character of single-neutron excitations outside of N = 82 has been studied using nucleon transfer reactions in terms of the energy centroid of their strength as well as the fragmentation of this strength among the actual states of the nucleus. However, extending the systematic study of the N = 83 isotones to 137Xe has been challenging due to xenon being a gas at room temperature. Though several attempts have been made, a quantitative determination of the spectroscopic factors for the neutron 9/2- and 13/2+ excitations in 137Xe is still lacking. In the present work, we report on a study of the 136Xe(α,3He)137Xe reaction carried out at 100 MeV to probe the l = 5 , 9/2- and l = 6 , 13/2+ single-neutron excitations. The experimental technique and results will be presented discussing them in context of the evolution of these single-neutron excitations and the influence of the tensor interaction on the neutron single-particle states as the proton orbits are filling. This work has been supported by the U.S. Department of Energy, Office of Science, Office of Nuclear Physics, under Contract Number DE-AC02-06CH11357, the Australian Research Council Discovery Project 120104176, and the UK Science and Technology Facilities.

  2. Luminescence decay in condensed argon under high energy excitation

    International Nuclear Information System (INIS)

    Carvalho, M.J.; Klein, G.

    1978-01-01

    α and β particles were used to study the luminescence of condensed argon. The scintillation decay has always two components independently of the phase and the kind of the exciting particles. Decay time constants are given for solid, liquid and also gaseous argon. Changes in the relative intensity values of the two components are discussed in terms of track effects

  3. The wave buoy analogy - estimating high-frequency wave excitations

    DEFF Research Database (Denmark)

    Nielsen, Ulrik Dam

    2008-01-01

    of sea state parameters — influence of filtering. Ocean Engineering 2007;34:1797–810.], where time series of ship responses were generated from a known wave spectrum for the purpose of the inverse process — the estimation of the underlying wave excitations. Similar response generations and vice versa...

  4. Optimization of metallic microheaters for high-speed reconfigurable silicon photonics.

    Science.gov (United States)

    Atabaki, A H; Shah Hosseini, E; Eftekhar, A A; Yegnanarayanan, S; Adibi, A

    2010-08-16

    The strong thermooptic effect in silicon enables low-power and low-loss reconfiguration of large-scale silicon photonics. Thermal reconfiguration through the integration of metallic microheaters has been one of the more widely used reconfiguration techniques in silicon photonics. In this paper, structural and material optimizations are carried out through heat transport modeling to improve the reconfiguration speed of such devices, and the results are experimentally verified. Around 4 micros reconfiguration time are shown for the optimized structures. Moreover, sub-microsecond reconfiguration time is experimentally demonstrated through the pulsed excitation of the microheaters. The limitation of this pulsed excitation scheme is also discussed through an accurate system-level model developed for the microheater response.

  5. vuv fluorescence from selective high-order multiphoton excitation of N2

    International Nuclear Information System (INIS)

    Coffee, Ryan N.; Gibson, George N.

    2004-01-01

    Recent fluorescence studies suggest that ultrashort pulse laser excitation may be highly selective. Selective high-intensity laser excitation holds important consequences for the physics of multiphoton processes. To establish the extent of this selectivity, we performed a detailed comparative study of the vacuum ultraviolet fluorescence resulting from the interaction of N 2 and Ar with high-intensity infrared ultrashort laser pulses. Both N 2 and Ar reveal two classes of transitions, inner-valence ns ' l ' . From their pressure dependence, we associate each transition with either plasma or direct laser excitation. Furthermore, we qualitatively confirm such associations with the time dependence of the fluorescence signal. Remarkably, only N 2 presents evidence of direct laser excitation. This direct excitation produces ionic nitrogen fragments with inner-valence (2s) holes, two unidentified transitions, and one molecular transition, the N 2 + :X 2 Σ g + 2 Σ u + . We discuss these results in the light of a recently proposed model for multiphoton excitation

  6. Characterization of three high efficiency and blue sensitive silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Otte, Adam Nepomuk, E-mail: otte@gatech.edu; Garcia, Distefano; Nguyen, Thanh; Purushotham, Dhruv

    2017-02-21

    We report about the optical and electrical characterization of three high efficiency and blue sensitive Silicon photomultipliers from FBK, Hamamatsu, and SensL. Key features of the tested devices when operated at 90% breakdown probability are peak photon detection efficiencies between 40% and 55%, temperature dependencies of gain and PDE that are less than 1%/°C, dark rates of ∼50 kHz/mm{sup 2} at room temperature, afterpulsing of about 2%, and direct optical crosstalk between 6% and 20%. The characteristics of all three devices impressively demonstrate how the Silicon-photomultiplier technology has improved over the past ten years. It is further demonstrated how the voltage and temperature characteristics of a number of quantities can be parameterized on the basis of physical models. The models provide a deeper understanding of the device characteristics over a wide bias and temperature range. They also serve as examples how producers could provide the characteristics of their SiPMs to users. A standardized parameterization of SiPMs would enable users to find the optimal SiPM for their application and the operating point of SiPMs without having to perform measurements thus significantly reducing design and development cycles.

  7. Development of high-efficiency solar cells on silicon web

    Science.gov (United States)

    Meier, D. L.; Greggi, J.; Okeeffe, T. W.; Rai-Choudhury, P.

    1986-01-01

    Work was performed to improve web base material with a goal of obtaining solar cell efficiencies in excess of 18% (AM1). Efforts in this program are directed toward identifying carrier loss mechanisms in web silicon, eliminating or reducing these mechanisms, designing a high efficiency cell structure with the aid of numerical models, and fabricating high efficiency web solar cells. Fabrication techniques must preserve or enhance carrier lifetime in the bulk of the cell and minimize recombination of carriers at the external surfaces. Three completed cells were viewed by cross-sectional transmission electron microscopy (TEM) in order to investigate further the relation between structural defects and electrical performance of web cells. Consistent with past TEM examinations, the cell with the highest efficiency (15.0%) had no dislocations but did have 11 twin planes.

  8. Effect of high-frequency excitation on natural frequencies of spinning discs

    DEFF Research Database (Denmark)

    Hansen, Morten Hartvig

    2000-01-01

    The effect of high-frequency, non-resonant parametric excitation on the low-frequency response of spinning discs is considered. The parametric excitation is obtained through a non-constant rotation speed, where the frequency of the pulsating overlay is much higher than the lowest natural frequenc......The effect of high-frequency, non-resonant parametric excitation on the low-frequency response of spinning discs is considered. The parametric excitation is obtained through a non-constant rotation speed, where the frequency of the pulsating overlay is much higher than the lowest natural...

  9. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric...

  10. Aspects of data on the breakup of highly excited nuclei

    International Nuclear Information System (INIS)

    Warwick, A.I.; Wieman, H.H.; Gutbrod, H.H.; Ritter, H.G.; Stelzer, H.; Weik, F.; Kaufman, S.B.; Steinberg, E.P.; Wilkins, B.D.

    1983-05-01

    There is an awakening of theoretical interest in the mechanisms by which nuclear fragments (4 less than or equal to A less than or equal to 150) are produced in violent collisions of heavy ions. With this in mind we review some aspects of the available experimental data and point out some challenging features against which to test the models. The concept of evaporation is tremendously powerful when applied to pieces of nuclei of low excitation (1 or 2 MeV/u). Current interest focuses on higher excitations, at the point where the binding energy of the system vanishes. This is the transition from liquid nuclei to a gas of nucleons, and it may be that the critical phenomena that certainly exist in infinite nuclear matter will be manifest in finite nuclei under these conditions

  11. Superconductivity and charge transfer excitations in high Tc superconductors

    International Nuclear Information System (INIS)

    Balseiro, C.A.; Alascio, B.; Gagliano, E.; Rojo, A.

    1988-01-01

    We present some numerical results to show that in a simple model which includes Cu 3d and O 2p orbitals together with inter and intra atomic correlations pairing between holes can occur due to charge transfer excitations. We present also a simple approximation to derive an effective Hamiltonian containing an interaction between particles which is attractive for some values of the different microscopic parameters

  12. Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2013-07-01

    Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

  13. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  14. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  15. Luminescence of CsPbBr3 films under high-power excitation

    OpenAIRE

    高橋, 一彰; 斎藤, 忠昭; 近藤, 新一; 浅田, 拡志

    2004-01-01

    Highly excited photoluminescence of CsPbBr3 has been measured for thin films prepared by crystallization from the amorphous phase into microcrystalline/ polycrystalline states. With the increase of excitation intensity, there occurs jumping of the dominant emission band from a free-exciton band to a new band originating from exciton-exciton inelastic collision. Stimulated emission is observed for the new band at very low threshold excitation intensities of the order of 10kW/cm2.

  16. Statistical and direct decay of high-lying single-particle excitations

    International Nuclear Information System (INIS)

    Gales, S.

    1993-01-01

    Transfer reactions induced by hadronic probes at intermediate energies have revealed a rich spectrum of high-lying excitations embedded in the nuclear continuum. The investigation of their decay properties is believed to be a severe test of their microscopic structure as predicted by microscopic nuclear models. In addition the degree of damping of these simple modes in the nuclear continuum can be obtained by means of the measured particle (n,p) decay branching ratios. The neutron and proton decay studies of high-lying single-particle states in heavy nuclei are presented. (author). 13 refs., 9 figs

  17. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai [ORNL; Koyanagi, Takaaki [ORNL; Kiggans, Jim [ORNL; Cetiner, Nesrin [ORNL; McDuffee, Joel [ORNL

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  18. Porous silicon phantoms for high-resolution scintillation imaging

    Energy Technology Data Exchange (ETDEWEB)

    Di Francia, G. [Portici Research Centre, ENEA, Via Vecchio Macello, 80055 Portici, Naples (Italy); Scafe, R. [Casaccia Research Centre, ENEA, 00060 S.Maria di Galeria, Rome (Italy)]. E-mail: scafe@casaccia.enea.it; De Vincentis, G. [Department of Radiological Sciences, University of Rome ' La Sapienza' , V.le Regina Elena, 324, 00161 Rome (Italy); La Ferrara, V. [Portici Research Centre, ENEA, Via Vecchio Macello, 80055 Portici, Naples (Italy); Iurlaro, G. [Casaccia Research Centre, ENEA, 00060 S.Maria di Galeria, Rome (Italy); Nasti, I. [Portici Research Centre, ENEA, Via Vecchio Macello, 80055 Portici, Naples (Italy); Montani, L. [Casaccia Research Centre, ENEA, 00060 S.Maria di Galeria, Rome (Italy); Pellegrini, R. [Department of Experimental Medicine, University of Rome ' La Sapienza' , V.le Regina Elena, 324, 00161 Rome (Italy); Betti, M. [Department of Experimental Medicine, University of Rome ' La Sapienza' , V.le Regina Elena, 324, 00161 Rome (Italy); Martucciello, N. [Portici Research Centre, ENEA, Via Vecchio Macello, 80055 Portici, Naples (Italy); Pani, R. [Department of Experimental Medicine, University of Rome ' La Sapienza' , V.le Regina Elena, 324, 00161 Rome (Italy)

    2006-12-20

    High resolution radionuclide imaging requires phantoms with precise geometries and known activities using either Anger cameras equipped with pinhole collimators or dedicated small animal devices. Porous silicon samples, having areas of different shape and size, can be made and loaded with a radioactive material, obtaining: (a) precise radio-emitting figures corresponding to the porous areas geometry (b) a radioactivity of each figure depending on the pore's specifications, and (c) the same emission energy to be used in true exams. To this aim a sample with porous circular areas has been made and loaded with a {sup 99m}TcO{sub 4} {sup -} solution. Imaging has been obtained using both general purpose and pinhole collimators. This first sample shows some defects that are analyzed and discussed.

  19. Thermally stimulated current method applied to highly irradiated silicon diodes

    CERN Document Server

    Pintilie, I; Pintilie, I; Moll, Michael; Fretwurst, E; Lindström, G

    2002-01-01

    We propose an improved method for the analysis of Thermally Stimulated Currents (TSC) measured on highly irradiated silicon diodes. The proposed TSC formula for the evaluation of a set of TSC spectra obtained with different reverse biases leads not only to the concentration of electron and hole traps visible in the spectra but also gives an estimation for the concentration of defects which not give rise to a peak in the 30-220 K TSC temperature range (very shallow or very deep levels). The method is applied to a diode irradiated with a neutron fluence of phi sub n =1.82x10 sup 1 sup 3 n/cm sup 2.

  20. High yield silicon carbide pre-ceramic polymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Polysilanes which are substituted with (CH 3 ) 3 SiO-groups are useful for the preparation in high yields of fine grained silicon carbide ceramic materials. They consist of 0 to 60 mole % (CH 3 ) 2 Si units and 100 to 40 mole % CH 3 Si units, all Si valences not satisfied by CH 3 groups or Si atoms being directed to groups (CH 3 ) 3 SiO-, which siloxane groups amount to 23 to 61 weight % of the polysilane. They are prepared by reaction of the corresponding chloro- or bromo-methyl polysilanes with at least the stoichiometric amounts of (CH 3 ) 3 SiOSi(CH 3 ) 3 and water in the presence of a strong acid. (author)

  1. HIGH FREQUENCY INDUCTION WELDING OF HIGH SILICON STEEL TUBES

    Directory of Open Access Journals (Sweden)

    Ricardo Miranda Alé

    2012-06-01

    Full Text Available High-Si steel is a low cost alternative for the fabrication of tubular structures resistant to atmospheric corrosion. However, the literature has often pointed out that steels presenting a higher Si content and/or a lower Mn/Si ratio have higher susceptibility to defects at the weld bond line during HFIW (High Frequency Induction Welding process, which has been widely used for manufacturing small diameter tubes. In this study the effect of the HFIW conditions on the quality of steel tubes with high-Si content and low Mn/Si ratio is investigated. The quality of welded tubes was determined by flare test and the defects in the bond line were identified by SEM. It has been found that higher welding speeds, V-convergence angles and power input should be applied in welding of high-Si steel, when compared to similar strength C-Mn steel.

  2. Fabrication and Characterisation of Silicon Waveguides for High-Speed Optical Signal Processing

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup

    This Ph.D. thesis treats various aspects of silicon photonics. From the limitations of silicon as a linear and nonlinear waveguide medium to its synergy with other waveguide materials. Various methods for reducing sidewall roughness and line edge roughness of silicon waveguides are attempted...... was too high for any practical applications. It is speculated that the attempt at creating a material with low density of dangling bonds was unsuccessful. Nevertheless, linear losses of 2.4dB/cm at 1550nm wavelength in the silicon waveguides remained sufficiently low that high speed nonlinear optical...

  3. High-j neutron excitations outside 136Xe

    Science.gov (United States)

    Talwar, R.; Kay, B. P.; Mitchell, A. J.; Adachi, S.; Entwisle, J. P.; Fujita, Y.; Gey, G.; Noji, S.; Ong, H. J.; Schiffer, J. P.; Tamii, A.

    2017-08-01

    The ν 0 h9 /2 and ν 0 i13 /2 strength at 137Xe, a single neutron outside the N =82 shell closure, has been determined using the 136Xe(α ,3He)137Xe reaction carried out at 100 MeV. We confirm the recent observation of the second 13 /2+ state and reassess previous data on the 9 /2- states, obtaining spectroscopic factors. These new data provide additional constraints on predictions of the same single-neutron excitations at 133Sn.

  4. Suppression effect of silicon (Si on Er3+ 1.54μm excitation in ZnO thin films

    Directory of Open Access Journals (Sweden)

    Bo Xu

    2016-08-01

    Full Text Available We have investigated the photoluminescence (PL characteristics of ZnO:Er thin films on Si (100 single crystal and SiO2-on-silicon (SiO2 substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS, X-ray diffraction (XRD and atomic force microscope (AFM were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS. Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT, PL (1.54μm intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er3+ 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er3+ was very low when compared with silicon nanocrystal (Si-NC. Both made the PL (1.54μm intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

  5. Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Bo; Lu, Fei, E-mail: lufei@sdu.edu.cn; Fan, Ranran [School of Information Science and Engineering, Shandong University, Jinan, Shandong 250100 (China); Ma, Changdong [Department of Radiation Oncology, Qilu Hospital, Shandong University, Jinan, Shandong 250100 (China)

    2016-08-15

    We have investigated the photoluminescence (PL) characteristics of ZnO:Er thin films on Si (100) single crystal and SiO{sub 2}-on-silicon (SiO{sub 2}) substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS), X-ray diffraction (XRD) and atomic force microscope (AFM) were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS). Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT), PL (1.54μm) intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si) appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er{sup 3+} 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er{sup 3+} was very low when compared with silicon nanocrystal (Si-NC). Both made the PL (1.54μm) intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

  6. Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

    2017-03-15

    Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

  7. A 1024 pad silicon detector to solve tracking ambiguities in high multiplicity events

    International Nuclear Information System (INIS)

    Simone, S.; Catanesi, M.G.; Di Bari, D.; Didonna, V.; Elia, D.; Ghidini, B.; Lenti, V.; Manzari, V.; Nappi, E.

    1996-01-01

    Silicon detectors with two-dimensional pad readout have been designed and constructed for the WA97 experiment at CERN, in order to solve ambiguities for track reconstruction in a silicon microstrip telescope. A high density fanouts has been developed on a glass support to allow the electrical contacts between the detector and the front end electronics. Silicon pad detectors have been successfully operated both during the proton-Pb and Pb-Pb runs of the WA97 experiment. (orig.)

  8. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.; Almuslem, A. S.; Gumus, Abdurrahman; Hussain, Aftab M.; Hussain, Aftab M.; Cruz, Melvin; Hussain, Muhammad Mustafa

    2016-01-01

    shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using

  9. High-performance lithium battery anodes using silicon nanowires.

    Science.gov (United States)

    Chan, Candace K; Peng, Hailin; Liu, Gao; McIlwrath, Kevin; Zhang, Xiao Feng; Huggins, Robert A; Cui, Yi

    2008-01-01

    There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

  10. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor.

    Science.gov (United States)

    Lee, Jieun; Jang, Jaeman; Choi, Bongsik; Yoon, Jinsu; Kim, Jee-Yeon; Choi, Yang-Kyu; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin

    2015-07-21

    This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5 × 10(5) times larger than that of a single SiNW sensor. In addition, we demonstrate charged polymer detection using the biosensor, with a high current change of 4.5 × 10(5) with a 500 nM concentration of poly(allylamine hydrochloride). In addition, we demonstrate a wide dynamic range can be obtained by adjusting the liquid gate voltage. We expect that this biosensor will be advantageous and practical for biosensor applications which requires lower noise, high speed, and high density.

  11. The status of silicon ribbon growth technology for high-efficiency silicon solar cells

    Science.gov (United States)

    Ciszek, T. F.

    1985-01-01

    More than a dozen methods have been applied to the growth of silicon ribbons, beginning as early as 1963. The ribbon geometry has been particularly intriguing for photovoltaic applications, because it might provide large area, damage free, nearly continuous substrates without the material loss or cost of ingot wafering. In general, the efficiency of silicon ribbon solar cells has been lower than that of ingot cells. The status of some ribbon growth techniques that have achieved laboratory efficiencies greater than 13.5% are reviewed, i.e., edge-defined, film-fed growth (EFG), edge-supported pulling (ESP), ribbon against a drop (RAD), and dendritic web growth (web).

  12. Fission of highly excited nuclei investigated in complete kinematic measurements

    International Nuclear Information System (INIS)

    Rodriguez-Sanchez, J. L.; Benlliure, J.; Taieb, J.; Avarez-Pol, H.; Audouin, L.; Ayyad, Y.; Belier, G.; Boutoux, G.; Casarejos, E.; Chatillon, A.; Cortina-Gil, D.; Gorbinet, T.; Heinz, A.; Kelic-Heil, A.; Kurz, N.; Laurent, B.; Martin, J. F.; Paradela, C.; Pellereau, E.; Pietras, B.; Prochazka, A.; Ramos, D.; Rodriguez-Tajes, C.; Rossi, D.; Simon, H.; Tassan-Got, L.; Vargas, J.; Voss, B.

    2013-01-01

    Fission is an extremely complex mechanism that requires a dynamical approach to describe the evolution of the process in terms of intrinsic and collective excitations of the nuclear constituents. In order to determine these effects a complex experimental setup was mounted at GSI, which allowed us for the first time the full identification in charge and mass of all fission fragments thanks to a magnetic separation and the use of the inverse kinematic technique. Moreover, we also measured the neutron multiplicities and the light-charged particles emitted in coincidence with fission. These complete kinematic measurements will be used to define sensitive observables to dissipative and transient effects in fission. In this manuscript we present the first results for the total fission cross sections. (authors)

  13. Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

    International Nuclear Information System (INIS)

    Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

    2011-01-01

    Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

  14. Silicon micromachining using a high-density plasma source

    International Nuclear Information System (INIS)

    McAuley, S.A.; Ashraf, H.; Atabo, L.; Chambers, A.; Hall, S.; Hopkins, J.; Nicholls, G.

    2001-01-01

    Dry etching of Si is critical in satisfying the demands of the micromachining industry. The micro-electro-mechanical systems (MEMS) community requires etches capable of high aspect ratios, vertical profiles, good feature size control and etch uniformity along with high throughput to satisfy production requirements. Surface technology systems' (STS's) high-density inductively coupled plasma (ICP) etch tool enables a wide range of applications to be realized whilst optimizing the above parameters. Components manufactured from Si using an STS ICP include accelerometers and gyroscopes for military, automotive and domestic applications. STS's advanced silicon etch (ASE TM ) has also allowed the first generation of MEMS-based optical switches and attenuators to reach the marketplace. In addition, a specialized application for fabricating the next generation photolithography exposure masks has been optimized for 200 mm diameter wafers, to depths of ∼750 μm. Where the profile is not critical, etch rates of greater than 8 μm min -1 have been realized to replace previous methods such as wet etching. This is also the case for printer applications. Specialized applications that require etching down to pyrex or oxide often result in the loss of feature size control at the interface; this is an industry wide problem. STS have developed a technique to address this. The rapid progression of the industry has led to development of the STS ICP etch tool, as well as the process. (author)

  15. Fabrication of detectors and transistors on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1988-06-01

    A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

  16. A Compact Cosmic Ray Telescope using Silicon Photomultipliers for use in High Schools

    Science.gov (United States)

    Castro, Luis; Elizondo, Leonardo; Shelor, Mark; Cervantes, Omar; Fan, Sewan; Ritt, Stefan

    2016-03-01

    Over the years, the QuarkNet and the LBL Cosmic Ray Project have helped trained thousands of high school students and teachers to explore cosmic ray physics. To get high school students in the Salinas, CA area also excited about cosmic rays, we constructed a cosmic ray telescope as a physics outreach apparatus. Our apparatus includes a pair of plastic scintillators coupled to silicon photomultipliers (SiPM) and a coincidence circuit board. We designed and constructed custom circuit boards for mounting the SiPM detectors, the high voltage power supplies and coincidence AND circuit. The AND logic signals can be used for triggering data acquisition devices including an oscilloscope, a waveform digitizer or an Arduino microcontroller. To properly route the circuit wire traces, the circuit boards were layout in Eagle and fabricated in-house using a circuit board maker from LPKF LASER, model Protomat E33. We used a Raspberry Pi computer to control a fast waveform sampler, the DRS4 to digitize the SiPM signal waveforms. The CERN PAW software package was used to analyze the amplitude and time distributions of SiPM detector signals. At this conference, we present our SiPM experimental setup, circuit board fabrication procedures and the data analysis work flow. AIP Megger's Award, Dept. of Ed. Title V Grant PO31S090007.

  17. Twin photon pairs in a high-Q silicon microresonator

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, Steven; Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Jiang, Wei C. [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States)

    2015-07-27

    We report the generation of high-purity twin photon pairs through cavity-enhanced non-degenerate four-wave mixing (FWM) in a high-Q silicon microdisk resonator. Twin photon pairs are created within the same cavity mode and are consequently expected to be identical in all degrees of freedom. The device is able to produce twin photons at telecommunication wavelengths with a pair generation rate as large as (3.96 ± 0.03) × 10{sup 5} pairs/s, within a narrow bandwidth of 0.72 GHz. A coincidence-to-accidental ratio of 660 ± 62 was measured, the highest value reported to date for twin photon pairs, at a pair generation rate of (2.47 ± 0.04) × 10{sup 4} pairs/s. Through careful engineering of the dispersion matching window, we have reduced the ratio of photons resulting from degenerate FWM to non-degenerate FWM to less than 0.15.

  18. Evaluation of a high resolution silicon PET insert module

    Energy Technology Data Exchange (ETDEWEB)

    Grkovski, Milan, E-mail: milan.grkovski@ijs.si [Jožef Stefan Institute, Ljubljana (Slovenia); Memorial Sloan Kettering Cancer Center, New York, NY (United States); Brzezinski, Karol [IFIC/CSIC, Valencia (Spain); Cindro, Vladimir [Jožef Stefan Institute, Ljubljana (Slovenia); Clinthorne, Neal H. [University of Michigan, Ann Arbor, MI (United States); Kagan, Harris [Ohio State University, Columbus, OH (United States); Lacasta, Carlos [IFIC/CSIC, Valencia (Spain); Mikuž, Marko [Jožef Stefan Institute, Ljubljana (Slovenia); Solaz, Carles [IFIC/CSIC, Valencia (Spain); Studen, Andrej [Jožef Stefan Institute, Ljubljana (Slovenia); Weilhammer, Peter [Ohio State University, Columbus, OH (United States); Žontar, Dejan [Jožef Stefan Institute, Ljubljana (Slovenia)

    2015-07-11

    Conventional PET systems can be augmented with additional detectors placed in close proximity of the region of interest. We developed a high resolution PET insert module to evaluate the added benefit of such a combination. The insert module consists of two back-to-back 1 mm thick silicon sensors, each segmented into 1040 1 mm{sup 2} pads arranged in a 40 by 26 array. A set of 16 VATAGP7.1 ASICs and a custom assembled data acquisition board were used to read out the signal from the insert module. Data were acquired in slice (2D) geometry with a Jaszczak phantom (rod diameters of 1.2–4.8 mm) filled with {sup 18}F-FDG and the images were reconstructed with ML-EM method. Both data with full and limited angular coverage from the insert module were considered and three types of coincidence events were combined. The ratio of high-resolution data that substantially improves quality of the reconstructed image for the region near the surface of the insert module was estimated to be about 4%. Results from our previous studies suggest that such ratio could be achieved at a moderate technological expense by using an equivalent of two insert modules (an effective sensor thickness of 4 mm)

  19. Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

    2010-01-01

    A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

  20. Operation of a high-purity silicon diode alpha particle detector at 1.4 K

    International Nuclear Information System (INIS)

    Martoff, C.J.; Kaczanowicz, E.; Neuhauser, B.J.; Lopez, E.; Zhang, Y.; Ziemba, F.P.

    1991-01-01

    Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm 2 by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.)

  1. Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

    KAUST Repository

    Cui, Li-Feng; Yang, Yuan; Hsu, Ching-Mei; Cui, Yi

    2009-01-01

    We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires

  2. Silicon Valley: Planet Startup : Disruptive Innovation, Passionate Entrepreneurship & High-tech Startups

    NARCIS (Netherlands)

    dr. A. Maas; Dr. P. Ester

    2016-01-01

    For decades now, Silicon Valley has been the home of the future. It's the birthplace of the world's most successful high-tech companies-including Apple, Yahoo, Google, Facebook, Twitter, and many more. So what's the secret? What is it about Silicon Valley that fosters entrepreneurship and

  3. Study of high energy ion implantation of boron and oxygen in silicon

    International Nuclear Information System (INIS)

    Thevenin, P.

    1991-06-01

    Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

  4. Development of a process for high capacity arc heater production of silicon for solar arrays

    Science.gov (United States)

    Meyer, T. N.

    1980-01-01

    A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

  5. Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

    Science.gov (United States)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

    2016-01-01

    Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

  6. International Ultraviolet Explorer satellite observations of seven high-excitation planetary nebulae.

    Science.gov (United States)

    Aller, L H; Keyes, C D

    1980-03-01

    Observations of seven high-excitation planetary nebulae secured with the International Ultraviolet Explorer (IUE) satellite were combined with extensive ground-based data to obtain electron densities, gas kinetic temperatures, and ionic concentrations. We then employed a network of theoretical model nebulae to estimate the factors by which observed ionic concentrations must be multiplied to obtain elemental abundances. Comparison with a large sample of nebulae for which extensive ground-based observations have been obtained shows nitrogen to be markedly enhanced in some of these objects. Possibly most, if not all, high-excitation nebulae evolve from stars that have higher masses than progenitors of nebulae of low-to-moderate excitation.

  7. Structure of high excited nuclear states and elastic scattering

    International Nuclear Information System (INIS)

    Zhivopistsev, F.A.; Rzhevskij, E.S.

    1979-01-01

    An approach to a unified description of nuclear reactions and nuclear structure based on the formalism of the quantum Green functions and on the ideas of the theory of finite Fermi systems has been formulated. New structural vertices are introduced, which are responsible for nucleon collectivization in an atomic nucleus and for the excitation of many-phonon, quasideuteron, quasitriton and other configurations. The vertices define both the processes of particle scattering by atomic nuclei (T matrix and optical potentials) and the nuclear structure (secular equations and wave functions). The vertices are determined from the equations with effective many-particle forces Fsub(nm)sup(c). In their turn the Fsub(nm)sup(c) forces are either determined from a comparison of theory and experiment, or calculated from the equations with more fundamental nucleon-nucleon forces in a nucleus. The effective forces Fsub(nm)sup(c) are more universal than the constants of the theory of finite Fermi-systems, which extends the boundaries of applicability of the particle-hole formalism in the description of nuclear processes. In this approach the traditional methods of description of the nuclear structure, based on particular models of hamiltonian and wave functions, acquire a natural interpretation

  8. The character of resonant charge exchange involving highly excited atoms

    International Nuclear Information System (INIS)

    Kosarim, A. V.; Smirnov, B. M.; Capitelli, M.; Laricchiuta, A.

    2012-01-01

    We study the process of resonant charge exchange involving excited helium atoms with the principal quantum number n = 5 colliding with the helium ion in the ground state in the collision energy range from thermal up to 10 eV. This information may be important for the analysis of planet atmospheres containing helium, in particular, for Jupiter’s atmosphere, but our basic interest is the transition from the quantum to classical description of this process, where, due to large cross sections, evaluations of the cross sections are possible. For the chosen process, quantum theory allows determining the cross section as a result of a tunnel electron transition, while classical theory accounts for over-barrier electron transitions. The classical theory additionally requires effective transitions between states with close energies. The analysis of these transitions for helium with n = 5 shows that electron momenta and their projections are mixed for a part of the states, while for other states, the mixing is absent. A simple criterion to separate such states is given. In addition, the main contribution to the cross section of resonant charge exchange follows from tunnel electron transitions. As a result, the quantum theory is better for calculating the cross sections of resonant charge exchange than the classical one and also allows finding the partial cross sections of resonant charge exchange, while the classical approach gives the cross section of resonant charge exchange in a simple manner with the accuracy of 20%.

  9. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  10. Study of the giant dipole resonance built on highly excited states in Sn and Dy nuclei

    International Nuclear Information System (INIS)

    Stolk, A.

    1988-01-01

    A study is presented of the giant dipole resonance built on highly excited states. The aim is to get more detailed information on the properties of the GDR and to use it as a tool for the investigation of nuclear structure at high excitation energy. The high energy γ-rays seen from the decay of excited state GDRs in heavy ion fusion reactions reflect the average properties of the states populated by the γ-emission. The measurements at different initial excitation energies of 114 Sn provide information on the nuclear level density near the particle separation energy at an average angular momentum of 10ℎ. The study of shape changes at very high spin in 152-156 Dy nuclei is presented. A theoretical model developed to describe fusion-evaporation reactions is presented. 149 refs.; 63 figs.; 13 tabs

  11. Proceedings of the 1984 workshop on high-energy excitations in condensed matter. Volume II

    International Nuclear Information System (INIS)

    Silver, R.N.

    1984-12-01

    This volume covers electronic excitations, momentum distributions, high energy photons, and a wrap-up session. Abstracts of individual items from the conference were prepared separately for the data base

  12. Acoustic properties of perforates under high level multi-tone excitation

    OpenAIRE

    Bodén, Hans

    2013-01-01

    This paper discusses the effect of high level multi-tone acoustic excitation on the acoustic properties of perforates. It is based on a large experimental study of the nonlinear properties of these types of samples without mean grazing or bias flow. Compared to previously published results the present investigation concentrates on the effect of multiple harmonics. It is known from previous studies that high level acoustic excitation at one frequency will change the acoustic impedance of perfo...

  13. Photoionization study of doubly-excited helium at ultra-high resolution

    Energy Technology Data Exchange (ETDEWEB)

    Kaindl, G.; Schulz, K.; Domke, M. [Freie Universitaet Berlin (Germany)] [and others

    1997-04-01

    Ever since the pioneering work of Madden & Codling and Cooper, Fano & Prats on doubly-excited helium in the early sixties, this system may be considered as prototypical for the study of electron-electron correlations. More detailed insight into these states could be reached only much later, when improved theoretical calculations of the optically-excited {sup 1}P{sup 0} double-excitation states became available and sufficiently high energy resolution ({delta}E=4.0 meV) was achieved. This allowed a systematic investigation of the double-excitation resonances of He up to excitation energies close to the double-ionization threshold, I{sub infinity}=79.003 eV, which stimulated renewed theoretical interest into these correlated electron states. The authors report here on striking progress in energy resolution in this grazing-incidence photon-energy range of grating monochromators and its application to hitherto unobservable states of doubly-excited He. By monitoring an extremely narrow double-excitation resonance of He, with a theoretical lifetime width of less than or equal to 5 {mu}eV, a resolution of {delta}E=1.0 meV (FWHM) at 64.1 eV could be achieved. This ultra-high spectral resolution, combined with high photon flux, allowed the investigation of new Rydberg resonances below the N=3 ionization threshold, I{sub 3}, as well as a detailed comparison with ab-initio calculations.

  14. High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

    2014-01-01

    Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

  15. Confined high-pressure chemical deposition of hydrogenated amorphous silicon.

    Science.gov (United States)

    Baril, Neil F; He, Rongrui; Day, Todd D; Sparks, Justin R; Keshavarzi, Banafsheh; Krishnamurthi, Mahesh; Borhan, Ali; Gopalan, Venkatraman; Peacock, Anna C; Healy, Noel; Sazio, Pier J A; Badding, John V

    2012-01-11

    Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells. © 2011 American Chemical Society

  16. Silicon photomultipliers. Properties and applications in a highly granular calorimeter

    International Nuclear Information System (INIS)

    Feege, Nils

    2008-12-01

    Silicon Photomultipliers (SiPMs) are novel semiconductor-based photodetectors operated in Geiger mode. Their response is not linear, and both their gain and their photon detection efficiency depend on the applied bias voltage and on temperature. The CALICE collaboration investigates several technology options for highly granular calorimeters for the future ILC. The prototype of a scintillator-steel sampling calorimeter with analogue readout for hadrons constructed at DESY and successfully operated in testbeam experiments at DESY, CERN and FNAL by this collaboration is the first large scale application for 7608 SiPMs developed by MEPhI. This thesis deals with properties of the SiPMs used in the calorimeter prototype. The effective numer of pixels of the SiPMs, which influences their saturation behaviour, is extracted from in situ measurements and compared to results obtained for the bare SiPMs. In addition, the effects of temperature and voltage changes on the parameters necessary for the calibration of the SiPMs and the detector are determined. Methods which allow for correcting or compensating these effects are evaluated. An approach to improve the absolute calibration of the temperature sensors in the prototype is described and temperature profiles are studied. Finally, a procedure to adjust the light yield of the cells of the prototype is presented. The results of the application of this procedure during the commissioning of the detector at FNAL are discussed. (orig.)

  17. Silicon photomultipliers. Properties and applications in a highly granular calorimeter

    Energy Technology Data Exchange (ETDEWEB)

    Feege, Nils

    2008-12-15

    Silicon Photomultipliers (SiPMs) are novel semiconductor-based photodetectors operated in Geiger mode. Their response is not linear, and both their gain and their photon detection efficiency depend on the applied bias voltage and on temperature. The CALICE collaboration investigates several technology options for highly granular calorimeters for the future ILC. The prototype of a scintillator-steel sampling calorimeter with analogue readout for hadrons constructed at DESY and successfully operated in testbeam experiments at DESY, CERN and FNAL by this collaboration is the first large scale application for 7608 SiPMs developed by MEPhI. This thesis deals with properties of the SiPMs used in the calorimeter prototype. The effective numer of pixels of the SiPMs, which influences their saturation behaviour, is extracted from in situ measurements and compared to results obtained for the bare SiPMs. In addition, the effects of temperature and voltage changes on the parameters necessary for the calibration of the SiPMs and the detector are determined. Methods which allow for correcting or compensating these effects are evaluated. An approach to improve the absolute calibration of the temperature sensors in the prototype is described and temperature profiles are studied. Finally, a procedure to adjust the light yield of the cells of the prototype is presented. The results of the application of this procedure during the commissioning of the detector at FNAL are discussed. (orig.)

  18. Observations of silicon carbide by high resolution transmission electron microscopy

    International Nuclear Information System (INIS)

    Smith, D.J.; Jepps, N.W.; Page, T.F.

    1978-01-01

    High resolution transmission electron microscopy techniques, principally involving direct lattice imaging, have been used as part of a study of the crystallography and phase transformation mechanics of silicon carbide polytypes. In particular, the 3C (cubic) and 6H (hexagonal) polytypes have been examined together with partially transformed structural mixtures. Although direct observation of two-dimensional atomic structures was not possible at an operating voltage of 100 kV, considerable microstructural information has been obtained by careful choice of the experimental conditions. In particular, tilted beam observations of the 0.25 nm lattice fringes have been made in the 3C polytype for two different brace 111 brace plane arrays in order to study the dimensions and coherency of finely-twinned regions together with brace 0006 brace and brace 1 0 bar1 2 brace lattice images in the 6H polytype which allow the detailed stacking operations to be resolved. Lower resolution lattice images formed with axial illumination have also been used to study the nature of the 3C → 6H transformation and results are presented showing that the transformation interface may originate with fine twinning of the 3C structure followed by growth of the resultant 6H regions. Observations have been made of the detailed stepped structure of this interface together with the stacking fault distribution in the resultant 6H material. (author)

  19. Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

    Science.gov (United States)

    Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

    2017-06-01

    N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

  20. Functionalization of 2D macroporous silicon under the high-pressure oxidation

    Science.gov (United States)

    Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

    2018-03-01

    Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

  1. Development of a Process for a High Capacity Arc Heater Production of Silicon for Solar Arrays

    Science.gov (United States)

    Reed, W. H.

    1979-01-01

    A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant (sodium) are injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection were developed. Included in this report are: test system preparation; testing; injection techniques; kinetics; reaction demonstration; conclusions; and the project status.

  2. Study on high-silicon boron-containing zeolite by thermogravimetric and IR-spectroscopy techniques

    International Nuclear Information System (INIS)

    Chukin, G.D.; Nefedov, B.K.; Surin, S.A.; Polinina, E.V.; Khusid, B.L.; Sidel'kovskaya, V.G.

    1985-01-01

    The structure identity of initial Na-forms of boron-containing and aluminosilicate high-silicon zeolites is established by thermogravimetric and IR-spectroscopy methods. The presence of boron in Na-forms of high-silicon zeolites is shown to lead to reduction of structure thermal stability. It is noted that thermal stability of the H-form of both high-silicon boron-containing and boron-free zeolites is practically equal and considerably higher than that of Na-forms

  3. Frictional characteristics of silicon graphite lubricated with water at high pressure and high temperature

    International Nuclear Information System (INIS)

    Lee, Jae Seon; Kim, Eun Hyun; Park, Jin Seok; Kim, Jong In

    2001-01-01

    Experimental frictional and wear characteristics of silicon graphite materials is studied in this paper. Those specimens are lubricated with high temperature and highly pressurized water to simulate the same operating condition for the journal bearing and the thrust bearing on the main coolant pump bearing in the newly developing nuclear reactor named SMART(System-integrated Modular Advanced ReacTor). Operating condition of the bearings is realized by the tribometer and the autoclave. Friction coefficient and wear loss are analyzed to choose the best silicon graphite material. Pin on plate test specimens are used and coned disk springs are used to control the applied force on the specimens. Wear loss and wear width are measured by a precision balance and a micrometer. The friction force is measured by the strain gauge which can be used under high temperature and high pressure. Three kinds of silicon graphite materials are examined and compared with each other, and each material shows similar but different results on frictional and wear characteristics

  4. Production of autoionizing di-excited states of barium with high angular momentum

    International Nuclear Information System (INIS)

    Roussel, F.; Breger, P.; Gounand, F.; Spiess, G.

    1988-01-01

    Autoionizing di-excited states Ba(6p 1/2 27l) with 7 ≤l≤26, have been experimentally detected. They have been produced by a method combining excitation by two lasers and l-mixing collisions between barium and xenon. Results show that a long delay between the two laser excitation steps is favourable to the production of these states. The method has proved to be very efficient (measured cross-section: σ = 3.1 . 10 -13 cm 2 ) for populating high-angular-momentum autoionizing states of barium

  5. Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

    International Nuclear Information System (INIS)

    Lagov, P B; Drenin, A S; Zinoviev, M A

    2017-01-01

    Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

  6. Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

    Science.gov (United States)

    Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

    2017-05-01

    Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

  7. Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

    KAUST Repository

    Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2017-01-01

    A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible

  8. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  9. Crystal growth for high-efficiency silicon solar cells workshop: Summary

    Science.gov (United States)

    Dumas, K. A.

    1985-01-01

    The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.

  10. High yield silicon carbide from alkylated or arylated pre-ceramic polymer

    International Nuclear Information System (INIS)

    Baney, R.H.; Gaul, J.H.

    1982-01-01

    Alkylated or arylated methylpolysilanes which exhibit ease of handling and are used to obtain silicon carbide ceramic materials in high yields contain 0 to 60 mole percent (CH 3 ) 2 Si double bond units and 40 to 100 mole percent CH 3 Si triple bond units, wherein there is also bonded to the silicon atoms other silicon atoms and additional alkyl radicals of 1 to 4 carbon atoms or phenyl. They may be prepared by reaction of a Grignard reagent RMgX, where X is halogen and R is Csub(1-4)-alkyl or phenyl, with a starting material which is a solid at 25 0 C, and is identical to the product except that the remaining bonds on the silicon atoms are attached to another silicon atom, or a chlorine or a bromine atom. Ceramics result from heating the polysilane products to 1200 0 C, optionally with fillers. (author)

  11. High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation)

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Hirori, Hideki

    2017-01-01

    Summary form only given. Metallic antenna arrays fabricated on high resistivity silicon are used to localize and enhance the incident THz field resulting in high electric field pulses with peak electric field strength reaching several MV/cm on the silicon surface near the antenna tips. In such high...... electric field strengths high density of carriers are generated in silicon through impact ionization process. The high density of generated carriers induces a change of refractive index in silicon. By measuring the change of reflectivity of tightly focused 800 nm light, the local density of free carriers...... near the antenna tips is measured. Using the NIR probing technique, we observed that the density of carriers increases by over 8 orders of magnitude in a time duration of approximately 500 fs with an incident THz pulse of peak electric field strength 700 kV/cm. This shows that a single impact...

  12. Electrical properties of as-grown and proton-irradiated high purity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł [Institute of Electronic Materials Technology, Wólczyńska 13, 301-919 Warsaw (Poland); Jensen, Leif [Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund (Denmark)

    2016-08-01

    The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE{sub 011} and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.

  13. Silicon Detector System for High Rate EXAFS Applications

    OpenAIRE

    Pullia, A.; Kraner, H. W.; Siddons, D. P.; Furenlid, L. R.; Bertuccio, G.

    1995-01-01

    A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at −35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at −35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWH...

  14. Dielectric elastomers, with very high dielectric permittivity, based on silicone and ionic interpenetrating networks

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Hvilsted, Søren

    2015-01-01

    permittivity and the Young's modulus of the elastomer. One system that potentially achieves this involves interpenetrating polymer networks (IPNs), based on commercial silicone elastomers and ionic networks from amino- and carboxylic acid-functional silicones. The applicability of these materials as DEs...... are obtained while dielectric breakdown strength and Young's modulus are not compromised. These good overall properties stem from the softening effect and very high permittivity of ionic networks – as high as ε′ = 7500 at 0.1 Hz – while the silicone elastomer part of the IPN provides mechanical integrity...

  15. Talc-silicon glass-ceramic waste forms for immobilization of high- level calcined waste

    International Nuclear Information System (INIS)

    Vinjamuri, K.

    1993-06-01

    Talc-silicon glass-ceramic waste forms are being evaluated as candidates for immobilization of the high level calcined waste stored onsite at the Idaho Chemical Processing Plant. These glass-ceramic waste forms were prepared by hot isostatically pressing a mixture of simulated nonradioactive high level calcined waste, talc, silicon and aluminum metal additives. The waste forms were characterized for density, chemical durability, and glass and crystalline phase compositions. The results indicate improved density and chemical durability as the silicon content is increased

  16. The Silicon Valley Eco System. High-energetic in many ways; Het Silicon Valley Eco Systeem: hoogenergetisch in vele opzichten

    Energy Technology Data Exchange (ETDEWEB)

    Van den Heuvel, J.

    2012-04-15

    The highly commended Silicon Valley Eco System is bubbling with energy with regard to the subjects that are focused upon, including sustainable energy, or the widely available expertise that is needed for the developments, good ideas, capital and optimism, fed by frequent examples of extraordinarily successful companies. The sheer endlessness of network opportunities joins all these elements frequently. This article addresses several noteworthy interactions in the field of sustainable energy over the last period. [Dutch] Het veel geroemde Silicon Valley eco systeem bruist van energie in de vorm van de onderwerpen waar men zich op richt, waaronder duurzame energie, of de ruim aanwezige expertise die nodig is voor de ontwikkelingen, goede ideeen, kapitaal, en optimisme, gevoed door regelmatige voorbeelden van buitensporig succesvolle bedrijven. De schier oneindige netwerkmogelijkheden brengen al deze elementen met grote regelmaat bij elkaar. In dit artikel volgen enkele vermeldenswaardige interacties op het vlak van duurzame energie uit de afgelopen periode.

  17. Stochastic evolutions and hadronization of highly excited hadronic matter

    International Nuclear Information System (INIS)

    Carruthers, P.

    1984-01-01

    Stochastic ingredients of high energy hadronic collisions are analyzed, with emphasis on multiplicity distributions. The conceptual simplicity of the k-cell negative binomial distribution is related to the evolution of probability distributions via the Fokker-Planck and related equations. The connection to underlying field theory ideas is sketched. 17 references

  18. High-Sensitivity Temperature-Independent Silicon Photonic Microfluidic Biosensors

    Science.gov (United States)

    Kim, Kangbaek

    Optical biosensors that can precisely quantify the presence of specific molecular species in real time without the need for labeling have seen increased use in the drug discovery industry and molecular biology in general. Of the many possible optical biosensors, the TM mode Si biosensor is shown to be very attractive in the sensing application because of large field amplitude on the surface and cost effective CMOS VLSI fabrication. Noise is the most fundamental factor that limits the performance of sensors in development of high-sensitivity biosensors, and noise reduction techniques require precise studies and analysis. One such example stems from thermal fluctuations. Generally SOI biosensors are vulnerable to ambient temperature fluctuations because of large thermo-optic coefficient of silicon (˜2x10 -4 RIU/K), typically requiring another reference ring and readout sequence to compensate temperature induced noise. To address this problem, we designed sensors with a novel TM-mode shallow-ridge waveguide that provides both large surface amplitude for bulk and surface sensing. With proper design, this also provides large optical confinement in the aqueous cladding that renders the device athermal using the negative thermo-optic coefficient of water (~ --1x10-4RIU/K), demonstrating cancellation of thermo-optic effects for aqueous solution operation near 300K. Additional limitations resulting from mechanical actuator fluctuations, stability of tunable lasers, and large 1/f noise of lasers and sensor electronics can limit biosensor performance. Here we also present a simple harmonic feedback readout technique that obviates the need for spectrometers and tunable lasers. This feedback technique reduces the impact of 1/f noise to enable high-sensitivity, and a DSP lock-in with 256 kHz sampling rate can provide down to micros time scale monitoring for fast transitions in biomolecular concentration with potential for small volume and low cost. In this dissertation, a novel

  19. Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

    KAUST Repository

    Abdallah, Amir

    2017-09-22

    We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell\\'s configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.

  20. Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

    KAUST Repository

    Abdallah, Amir; Daif, Ounsi El; Aï ssa, Brahim; Kivambe, Maulid; Tabet, Nouar; Seif, Johannes; Haschke, Jan; Cattin, Jean; Boccard, Mathieu; De Wolf, Stefaan; Ballif, Christophe

    2017-01-01

    We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell's configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.

  1. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2013-01-01

    (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree

  2. Improvements in numerical modelling of highly injected crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Altermatt, P.P. [University of New South Wales, Centre for Photovoltaic Engineering, 2052 Sydney (Australia); Sinton, R.A. [Sinton Consulting, 1132 Green Circle, 80303 Boulder, CO (United States); Heiser, G. [University of NSW, School of Computer Science and Engineering, 2052 Sydney (Australia)

    2001-01-01

    We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, n{sub i}=1.00x10{sup 10}cm{sup -3}, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of n{sub i} if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

  3. TEM investigation of aluminium containing precipitates in high aluminium doped silicon carbide

    International Nuclear Information System (INIS)

    Wong-Leung, J.; FitzGerald, J.D.

    2002-01-01

    Full text: Silicon carbide is a promising semiconductor material for applications in high temperature and high power devices. The successful growth of good quality epilayers in this material has enhanced its potential for device applications. As a novel semiconductor material, there is a need for studying its basic physical properties and the role of dopants in this material. In this study, silicon carbide epilayers were grown on 4H-SiC wafers of (0001) orientation with a miscut angle of 8 deg at a temperature of 1550 deg C. The epilayers contained regions of high aluminium doping well above the solubility of aluminium in silicon carbide. High temperature annealing of this material resulted in the precipitation of aluminium in the wafers. The samples were analysed by secondary ion mass spectrometry and transmission electron microscopy. Selected area diffraction studies show the presence of aluminium carbide and aluminium silicon carbide phases. Copyright (2002) Australian Society for Electron Microscopy Inc

  4. Thermophysical Properties of Molten Silicon Measured by JPL High Temperature Electrostatic Levitator

    Science.gov (United States)

    Rhim, W. K.; Ohsaka, K.

    1999-01-01

    Five thermophysical properties of molten silicon measured by the High Temperature Electrostatic Levitator (HTESL) at JPL are presented. The properties measured are the density, the constant pressure specific heat capacity, the hemispherical total emissivity, the surface tension and the viscosity.

  5. Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing

    International Nuclear Information System (INIS)

    Voelskow, Matthias; Skorupa, Wolfgang; Pezoldt, Joerg; Kups, Thomas

    2009-01-01

    High intensity light pulse irradiation of monocrystalline silicon wafers is usually accompanied by inhomogeneous surface melting. The aim of the present work is to induce homogeneous buried melting in silicon by germanium implantation and subsequent flash lamp annealing. For this purpose high dose, high energy germanium implantation has been employed to lower the melting temperature of silicon in a predetermined depth region. Subsequent flash lamp irradiation at high energy densities leads to local melting of the germanium rich buried layer, whereby the thickness of the molten layer depends on the irradiation energy density. During the cooling down epitaxial crystallization takes place resulting in a largely defect-free layer. The combination of buried melting and dopant segregation has the potential to produce unusually buried doping profiles or to create strained silicon structures.

  6. Density-dependent squeezing of excitons in highly excited semiconductors

    International Nuclear Information System (INIS)

    Nguyen Hong Quang.

    1995-07-01

    The time evolution from coherent states to squeezed states of high density excitons is studied theoretically based on the boson formalism and within the Random Phase Approximation. Both the mutual interaction between excitons and the anharmonic exciton-photon interaction due to phase-space filling of excitons are taken into account. It is shown that the exciton squeezing depends strongly on the exciton density in semiconductors and becomes smaller with increasing the latter. (author). 16 refs, 2 figs

  7. Nontrivial effects of high-frequency excitation for strongly damped mechanical systems

    DEFF Research Database (Denmark)

    Fidlin, Alexander; Thomsen, Jon Juel

    2008-01-01

    Some non-trivial effects are investigated, which can occur if strongly damped mechanical systems are subjected to strong high-frequency (HF) excitation. The main result is a theoretical prediction, supported by numerical simulation, that for such systems the (quasi-)equilibrium states can change...... that can be substantial depending on the strength of the HF excitation) for finite values of the damping. The analysis is focused on the differences between the classic results for weakly damped systems, and new effects for which the strong damping terms are responsible. The analysis is based on a slightly...... modified averaging technique, and includes an elementary example of an elliptically excited pendulum for illustration, alongside with a generalization to a broader class of strongly damped dynamical systems with HF excitation. As an application example, the nontrivial behavior of a classical optimally...

  8. Nontrivial effects of high-frequency excitation for strongly damped mechanical systems

    DEFF Research Database (Denmark)

    Fidlin, Alexander; Thomsen, Jon Juel

    Some nontrivial effects are investigated, which can occur if strongly damped mechanical systems are subjected to strong high-frequency (HF) excitation. The main result is a theoretical prediction, supported by numerical simulation, that for such systems the (quasi-)equilibrium states can change...... that can be substantial (depending on the strength of the HF excitation) for finite values of the damping. The analysis is focused on the differences between the classic results for weakly damped systems, and new effects for which the strong damping terms are responsible. The analysis is based...... on a slightly modified averaging technique, and includes an elementary example of an elliptically excited pendulum for illustration, alongside with a generalization to a broader class of strongly damped dynamical systems with HF excitation. As an application example, the nontrivial behavior of a classical...

  9. Development of Silicon Sensor Characterization System for Future High Energy Physics Experiments

    OpenAIRE

    Preeti kumari; Kavita Lalwani; Ranjeet Dalal; Geetika Jain; Ashutosh Bhardwaj; Kirti Ranjan

    2015-01-01

    The Compact Muon Solenoid (CMS) is one of the general purpose experiments at the Large Hadron Collider (LHC), CERN and has its Tracker built of all silicon strip and pixel sensors. Si sensors are expected to play extremely important role in the upgrades of the existing Tracker for future high luminosity environment and will also be used in future lepton colliders. However, properties of the silicon sensors have to be carefully understood before they can be put in the extremely high luminos...

  10. Scaling of black silicon processing time by high repetition rate femtosecond lasers

    Directory of Open Access Journals (Sweden)

    Nava Giorgio

    2013-11-01

    Full Text Available Surface texturing of silicon substrates is performed by femtosecond laser irradiation at high repetition rates. Various fabrication parameters are optimized in order to achieve very high absorptance in the visible region from the micro-structured silicon wafer as compared to the unstructured one. A 70-fold reduction of the processing time is demonstrated by increasing the laser repetition rate from 1 kHz to 200 kHz. Further scaling up to 1 MHz can be foreseen.

  11. Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

    Science.gov (United States)

    Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

    2013-10-01

    Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

  12. Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

    Science.gov (United States)

    Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

    2013-01-01

    Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10–40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage. PMID:24145684

  13. High-performance RF coil inductors on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Malba, V.; Young, D.; Ou, J.J.; Bernhardt, A.F.; Boser, B.E.

    1998-03-01

    Strong demand for wireless communication devices has motivated research directed toward monolithic integration of transceivers. The fundamental electronic component least compatible with silicon integrated circuits is the inductor, although a number of inductors are required to implement oscillators, filters and matching networks in cellular devices. Spiral inductors have been integrated into the silicon IC metallization sequence but have not performed adequately due to coupling to the silicon which results in parasitic capacitance and loss. We have, for the first time, fabricated three dimensional coil inductors on silicon which have significantly lower capacitive coupling and loss and which now exceed the requirements of potential applications. Quality factors of 30 at 1 GHz have been measured in single turn devices and Q > 16 in 2 and 4 turn devices. The reduced Q for multiturn devices appears to be related to eddy currents in outer turns generated by magnetic fields from current in neighboring turns. Higher Q values significantly in excess of 30 are anticipated using modified coil designs.

  14. Development of high efficiency solar cells on silicon web

    Science.gov (United States)

    Rohatgi, A.; Meier, D. L.; Campbell, R. B.; Schmidt, D. N.; Rai-Choudhury, P.

    1984-01-01

    Web base material is being improved with a goal toward obtaining solar cell efficiencies in excess of 18% (AM1). Carrier loss mechanisms in web silicon was investigated, techniques were developed to reduce carrier recombination in the web, and web cells were fabricated using effective surface passivation. The effect of stress on web cell performance was also investigated.

  15. High excitation rovibrational molecular analysis in warm environments

    Science.gov (United States)

    Zhang, Ziwei; Stancil, Phillip C.; Cumbee, Renata; Ferland, Gary J.

    2017-06-01

    Inspired by advances in infrared observation (e.g., Spitzer, Herschel and ALMA), we investigate rovibrational emission CO and SiO in warm astrophysical environments. With recent innovation in collisional rate coefficients and rescaling methods, we are able to construct more comprehensive collisional data with high rovibrational states (vibration up to v=5 and rotation up to J=40) and multiple colliders (H2, H and He). These comprehensive data sets are used in spectral simulations with the radiative transfer codes RADEX and Cloudy. We obtained line ratio diagnostic plots and line spectra for both near- and far-infrared emission lines over a broad range of density and temperature for the case of a uniform medium. Considering the importance of both molecules in probing conditions and activities of UV-irradiated interstellar gas, we model rovibrational emission in photodissociation region (PDR) and AGB star envelopes (such as VY Canis Majoris, IK Tau and IRC +10216) with Cloudy. Rotational diagrams, energy distribution diagrams, and spectra are produced to examine relative state abundances, line emission intensity, and other properties. With these diverse models, we expect to have a better understanding of PDRs and expand our scope in the chemical architecture and evolution of AGB stars and other UV-irradiated regions. The soon to be launched James Webb Space Telescope (JWST) will provide high resolution observations at near- to mid-infrared wavelengths, which opens a new window to study molecular vibrational emission calling for more detailed chemical modeling and comprehensive laboratory astrophysics data on more molecules. This work was partially supported by NASA grants NNX12AF42G and NNX15AI61G. We thank Benhui Yang, Kyle Walker, Robert Forrey, and N. Balakrishnan for collaborating on the collisional data adopted in the current work.

  16. Excitation of plasma waves by nonlinear currents induced by a high-frequency electromagnetic pulse

    Energy Technology Data Exchange (ETDEWEB)

    Grishkov, V. E.; Uryupin, S. A., E-mail: uryupin@sci.lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2017-03-15

    Excitation of plasma waves by nonlinear currents induced by a high-frequency electromagnetic pulse is analyzed within the kinetic approach. It is shown that the most efficient source of plasma waves is the nonlinear current arising due to the gradient of the energy density of the high-frequency field. Generation of plasma waves by the drag current is usually less efficient but not negligibly small at relatively high frequencies of electron–ion collisions. The influence of electron collisions on the excitation of plasma waves by pulses of different duration is described quantitatively.

  17. Piezoelectric self sensing actuators for high voltage excitation

    International Nuclear Information System (INIS)

    Grasso, E; Totaro, N; Janocha, H; Naso, D

    2013-01-01

    Self sensing techniques allow the use of a piezoelectric transducer simultaneously as an actuator and as a sensor. Such techniques are based on knowledge of the transducer behaviour and on measurements of electrical quantities, in particular voltage and charge. Past research work has mainly considered the linear behaviour of piezoelectric transducers, consequently restricting the operating driving voltages to low values. In this work a new self sensing technique is proposed which is able to perform self sensing reconstruction both at low and at high driving voltages. This technique, in fact, makes use of a hysteretic model to describe the nonlinear piezoelectric capacitance necessary for self sensing reconstruction. The capacitance can be measured and identified at the antiresonances of a vibrating structure with a good approximation. After providing a mathematical background to deal with the main aspects of self sensing, this technique is compared theoretically and experimentally to a typical linear one by using an aluminum plate with one bonded self sensing transducer and a positive position feedback (PPF) controller to verify the performance in self sensing based vibration control. (paper)

  18. Ultra-high-speed wavelength conversion in a silicon photonic chip

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Galili, Michael

    2011-01-01

    We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...

  19. Relaxation of the Shallow Acceptor Center Magnetic Moment in a Highly Doped Silicon

    CERN Document Server

    Mamedov, T N; Herlach, D; Gorelkin, V N; Gritsaj, K I; Duginov, V N; Kormann, O; Major, J V; Stoikov, A V; Zimmermann, U

    2001-01-01

    Results on the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium, boron and phosphorus impurities are presented. The measurements were carried out in a magnetic field of 0.1 T transverse to the direction of the muon spin in the temperature range 4.2-300 K. It is found that in a silicon sample with a high concentration of germanium impurity (9\\cdot 10^{19} cm^{-3}), as in the samples of n- and p-type silicon with impurity concentrations up to \\sim 10^{17} cm^{-3}, the relaxation rate \

  20. Silicon carbide production by Self-Propagating High Temperature (SHS) technique

    International Nuclear Information System (INIS)

    Lima, Eduardo de Souza; Schneider, Pedro Luiz; Mattoso, Irani Guedes; Costa, Carlos Roberto Correia da; Louro, Luis Henrique Leme

    1997-01-01

    Samples of silicon carbide (SiC) were synthesized from a mixture of silicon and carbon powders, using the Self-Propagating High Temperature Synthesis (SHS) technique. Three mixtures were tried, using silicon particles of the same average size but carbon particles of different average sizes. The method tried is characterized by an ignition temperature of 1450 deg C and the short duration of the synthesis ( 2-3 min). The samples were characterized by X-ray diffraction and scattering electron microscopy. (author)

  1. The structure of nuclear states at low, intermediate and high excitation energies

    International Nuclear Information System (INIS)

    Soloviev, V.G.

    1976-01-01

    It is shown that within the model based on the quasiparticle-phonon interaction one can obtain the description of few-quasiparticle components of nuclear states at low, intermediate and high excitation energies. For the low-lying states the energy of each level is calculated. The few-quasiparticle components at intermediate and high excitation energies are represented to be averaged in certain energy intervals and their characteri stics are given as the corresponding strength functions. The fragmentation of single-particle states in deformed nuclei is studied. It is shown that in the distribution of the single-particle strength alongside with a large maximum there appear local maxima and the distribution itself has a long tail. The dependence of neutron strength functions on the excitation energy is investigated for the transfer reaction of the type (d,p) and (d,t). The s,- p,- and d-wave neutron strength functions are calculated at the neutron binding energy Bn. A satisfactory agreement with experiment is obtained. The energies and Elambda-strength functions for giant multipole resonances in deformed nuclei are calculated. The energies of giant quadrupole and octupole resonances are calculated. Their widths and fine structure are being studied. It is stated that to study the structure of highly excited states it is necessary to find the values of many-quasiparticle components of the wave functions. The ways of experimental determination of these components based on the study of γ-transitions between highly excited states are discussed

  2. Silicon detectors for x and gamma-ray with high radiation resistance

    International Nuclear Information System (INIS)

    Cimpoca, Valerica; Popescu, Ion V.; Ruscu, Radu

    2001-01-01

    Silicon detectors are widely used in X and gamma-ray spectroscopy for direct detection or coupled with scintillators in high energy nuclear physics (modern collider experiments are representative), medicine and industrial applications. In X and gamma dosimetry, a low detection limit (under 6 KeV) with silicon detectors becomes available. Work at the room temperature is now possible due to the silicon processing evolution, which assures low reverse current and high life time of carriers. For several years, modern semiconductor detectors have been the primary choice for the measurement of nuclear radiation in various scientific fields. Nowadays the recently developed high resolution silicon detectors found their way in medical applications. As a consequence many efforts have been devoted to the development of high sensitivity and radiation hardened X and gamma-ray detectors for the energy range of 5 - 150 keV. The paper presents some results concerning the technology and behaviour of X and Gamma ray silicon detectors used in physics research, industrial and medical radiography. The electrical characteristics of these detectors, their modification after exposure to radiation and the results of spectroscopic X and Gamma-ray measurements are discussed. The results indicated that the proposed detectors enables the development of reliable silicon detectors to be used in controlling the low and high radiation levels encountered in a lot of application

  3. Fabrication of novel AFM probe with high-aspect-ratio ultra-sharp three-face silicon nitride tips

    NARCIS (Netherlands)

    Vermeer, Rolf; Berenschot, Johan W.; Sarajlic, Edin; Tas, Niels Roelof; Jansen, Henricus V.

    In this paper we present the wafer-scale fabrication of molded AFM probes with high aspect ratio ultra-sharp three-plane silicon nitride tips. Using $\\langle$111$\\rangle$ silicon wafers a dedicated process is developed to fabricate molds in the silicon wafer that have a flat triangular bottom

  4. Evolution of arsenic in high fluence plasma immersion ion implanted silicon : Behavior of the as-implanted surface

    NARCIS (Netherlands)

    Vishwanath, V.; Demenev, E.; Giubertoni, D.; Vanzetti, L.; Koh, A. L.; Steinhauser, G.; Pepponi, G.; Bersani, M.; Meirer, F.; Foad, M. A.

    2015-01-01

    High fluence (>1015 ions/cm2) low-energy (3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon

  5. X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

    International Nuclear Information System (INIS)

    Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

    1998-01-01

    We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

  6. Ultra-high resolution spectroscopy of the He doubly excited states

    International Nuclear Information System (INIS)

    Bozek, J.D.; Schlachter, A.S.; Kaindl, G.; Schulz, K.

    1995-11-01

    Photoionization spectra of the doubly-excited states of He were measured using beamline 9.0.1 at the Advanced Light Source. The beamline utilizes a 4.5 m long 8 cm period undulator as its source together with a spherical grating monochromator to provide an extremely bright source of photons in the range of 20 - 300 eV. A resolving power (E/ΔE) of 64,000 was obtained from the 1 MeV FWEM (2p,3d) doubly excited state resonance of He at 64.12 eV. The high brightness of the source and the very high quality optical elements of the beamline were all essential for achieving such a high resolution. The beamline components and operation are described and spectra of the double excitation resonances of He presented

  7. Systematic observation of tunneling field-ionization in highly excited Rb Rydberg atoms

    International Nuclear Information System (INIS)

    Kishimoto, Y.; Tada, M.; Kominato, K.; Shibata, M.; Yamada, S.; Haseyama, T.; Ogawa, I.; Funahashi, H.; Yamamoto, K.; Matsuki, S.

    2002-01-01

    Pulsed field ionization of high-n (90≤n≤150) manifold states in Rb Rydberg atoms has been investigated in high slew-rate regime. Two peaks in the field ionization spectra were systematically observed for the investigated n region, where the field values at the lower peak do not almost depend on the excitation energy in the manifold, while those at the higher peak increase with increasing excitation energy. The fraction of the higher peak component to the total ionization signals increases with increasing n, exceeding 80% at n=147. Characteristic behavior of the peak component and the comparison with theoretical predictions indicate that the higher peak component is due to the tunneling process. The obtained results show that the tunneling process plays increasingly the dominant role at such highly excited nonhydrogenic Rydberg atoms

  8. Kinetics of highly vibrationally excited O2(X) molecules in inductively-coupled oxygen plasmas

    Science.gov (United States)

    Annušová, Adriana; Marinov, Daniil; Booth, Jean-Paul; Sirse, Nishant; Lino da Silva, Mário; Lopez, Bruno; Guerra, Vasco

    2018-04-01

    The high degree of vibrational excitation of O2 ground state molecules recently observed in inductively coupled plasma discharges is investigated experimentally in more detail and interpreted using a detailed self-consistent 0D global kinetic model for oxygen plasmas. Additional experimental results are presented and used to validate the model. The vibrational kinetics considers vibrational levels up to v = 41 and accounts for electron impact excitation and de-excitation (e-V), vibration-to-translation relaxation (V-T) in collisions with O2 molecules and O atoms, vibration-to-vibration energy exchanges (V-V), excitation of electronically excited states, dissociative electron attachment, and electron impact dissociation. Measurements were performed at pressures of 10–80 mTorr (1.33 and 10.67 Pa) and radio frequency (13.56 MHz) powers up to 500 W. The simulation results are compared with the absolute densities in each O2 vibrational level obtained by high sensitivity absorption spectroscopy measurements of the Schumann–Runge bands for O2(X, v = 4–18), O(3 P) atom density measurements by two-photon absorption laser induced fluorescence (TALIF) calibrated against Xe, and laser photodetachment measurements of the O‑ negative ions. The highly excited O2(X, v) distribution exhibits a shape similar to a Treanor-Gordiets distribution, but its origin lies in electron impact e-V collisions and not in V-V up-pumping, in contrast to what happens in all other molecular gases known to date. The relaxation of vibrational quanta is mainly due to V-T energy-transfer collisions with O atoms and to electron impact dissociation of vibrationally excited molecules, e+O2(X, v)→O(3P)+O(3P).

  9. Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2008-08-15

    The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

  10. Porous silicon structures with high surface area/specific pore size

    Science.gov (United States)

    Northrup, M.A.; Yu, C.M.; Raley, N.F.

    1999-03-16

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gases in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters. 9 figs.

  11. High temperature mechanical performance of a hot isostatically pressed silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

    1996-01-01

    Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

  12. Impurity effects in silicon for high efficiency solar cells

    Science.gov (United States)

    Hopkins, R. H.; Rohatgi, A.

    1986-01-01

    Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.

  13. Silicon Detector System for High Rate EXAFS Applications.

    Science.gov (United States)

    Pullia, A; Kraner, H W; Siddons, D P; Furenlid, L R; Bertuccio, G

    1995-08-01

    A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

  14. High resolution silicon detectors for colliding beam physics

    International Nuclear Information System (INIS)

    Amendolia, S.R.; Bedeschi, F.; Bertolucci, E.; Bettoni, D.; Bosisio, L.; Bottigli, U.; Bradaschia, C.; Dell'Orso, M.; Fidecaro, F.; Foa, L.; Focardi, E.; Giannetti, P.; Giorgi, M.A.; Marrocchesi, P.S.; Menzione, A.; Raso, G.; Ristori, L.; Scribano, A.; Stefanini, A.; Tenchini, R.; Tonelli, G.; Triggiani, G.

    1984-01-01

    Resolution and linearity of the position measurement of Pisa multi-electrode silicon detectors are presented. The detectors are operated in slightly underdepleted mode and take advantage of their intrinsic resistivity for resistive charge partition between adjacent strips. 22 μm resolution is achieved with readout lines spaced 300 μm. Possible applications in colliding beam experiments for the detection of secondary vertices are discussed. (orig.)

  15. High Power Broadband Multispectral Source on a Hybrid Silicon Chip

    Science.gov (United States)

    2017-03-14

    optical bandwidth of the erbium-doped- fiber -amplifier with densely-spaced frequency channels. To extend the spectral capacity of the Si-on-insulator...associated with non-uniform undercut at the taper tip across the chip after wet etching the active region. Figure 14. Normalized optical emission...Hutchinson, J., Shin, J.-H., Fish, G., and Fang, A., “Integrated silicon photonic laser sources for telecom and datacom,” in [National Fiber Optic

  16. MOSFET-based high voltage short pulse generator for ultrasonic transducer excitation

    Science.gov (United States)

    Hidayat, Darmawan; Setianto, Syafei, Nendi Suhendi; Wibawa, Bambang Mukti

    2018-02-01

    This paper presents the generation of a high-voltage short pulse for the excitation of high frequency ultrasonic transducers. This is highly required in the purpose of various ultrasonic-based evaluations, particularly when high resolution measurement is necessary. A high voltage (+760 V) DC voltage source was pulsated by an ultrafast switching MOSFET which was driven by a pulse generator circuit consisting of an astable multivibrator, a one-shot multivibrator with Schmitt trigger input and a high current MOSFET driver. The generated pulses excited a 200-kHz and a 1-MHz ultrasonic transducers and tested in the transmission mode propagation to evaluate the performances of the generated pulse. The test results showed the generator were able to produce negative spike pulses up to -760 V voltage with the shortest time-width of 107.1 nanosecond. The transmission-received ultrasonic waves show frequency oscillation at 200 and 961 kHz and their amplitudes varied with the voltage of excitation pulse. These results conclude that the developed pulse generator is applicable to excite transducer for the generation of high frequency ultrasonic waves.

  17. Operation of a high-purity silicon diode alpha particle detector at 1. 4 K

    Energy Technology Data Exchange (ETDEWEB)

    Martoff, C.J.; Kaczanowicz, E. (Temple Univ., Philadelphia, PA (USA)); Neuhauser, B.J.; Lopez, E.; Zhang, Y. (San Francisco State Univ., CA (USA)); Ziemba, F.P. (Quantrad Corp. (USA))

    1991-03-01

    Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm{sup 2} by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.).

  18. Active Control of High-Speed Free Jets Using High-Frequency Excitation

    Science.gov (United States)

    Upadhyay, Puja

    Control of aerodynamic noise generated by high-performance jet engines continues to remain a serious problem for the aviation community. Intense low frequency noise produced by large-scale coherent structures is known to dominate acoustic radiation in the aft angles. A tremendous amount of research effort has been dedicated towards the investigation of many passive and active flow control strategies to attenuate jet noise, while keeping performance penalties to a minimum. Unsteady excitation, an active control technique, seeks to modify acoustic sources in the jet by leveraging the naturally-occurring flow instabilities in the shear layer. While excitation at a lower range of frequencies that scale with the dynamics of large-scale structures, has been attempted by a number of studies, effects at higher excitation frequencies remain severely unexplored. One of the major limitations stems from the lack of appropriate flow control devices that have sufficient dynamic response and/or control authority to be useful in turbulent flows, especially at higher speeds. To this end, the current study seeks to fulfill two main objectives. First, the design and characterization of two high-frequency fluidic actuators (25 and 60 kHz) are undertaken, where the target frequencies are guided by the dynamics of high-speed free jets. Second, the influence of high-frequency forcing on the aeroacoustics of high-speed jets is explored in some detail by implementing the nominally 25 kHz actuator on a Mach 0.9 (Re D = 5 x 105) free jet flow field. Subsequently, these findings are directly compared to the results of steady microjet injection experiments performed in the same rig and to prior jet noise control studies, where available. Finally, limited acoustic measurements were also performed by implementing the nominally 25 kHz actuators on jets at higher Mach numbers, including shock containing jets, and elevated temperatures. Using lumped element modeling as an initial guide, the current

  19. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  20. Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

    Directory of Open Access Journals (Sweden)

    Mohamed Sabry Mohamed

    2017-03-01

    Full Text Available We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG and third harmonic generation (THG in suspended gallium nitride slab photonic crystal (PhC cavities on silicon, under continuous-wave resonant excitation. Optimized two-dimensional PhC cavities with augmented far-field coupling have been characterized with quality factors as high as 4.4 × 104, approaching the computed theoretical values. The strong enhancement in light confinement has enabled efficient SHG, achieving a normalized conversion efficiency of 2.4 × 10−3 W−1, as well as simultaneous THG. SHG emission power of up to 0.74 nW has been detected without saturation. The results herein validate the suitability of gallium nitride for integrated nonlinear optical processing.

  1. Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

    International Nuclear Information System (INIS)

    Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Braeuer, G.; Repmann, T.

    2008-01-01

    Silicon thin-film solar cells based on microcrystalline silicon (μc-Si:H) were prepared in a 30 x 30 cm 2 plasma-enhanced chemical vapor deposition reactor using 13.56 or 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH * and H β emission indicated strong drifts in the process conditions particularly at low total gas flows. By actively controlling the SiH 4 gas flow, the observed process drifts were successfully suppressed resulting in a more homogeneous i-layer crystallinity along the growth direction. In a deposition regime with efficient usage of the process gas, the μc-Si:H solar cell efficiency was enhanced from 7.9 % up to 8.8 % by applying process control

  2. Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

    International Nuclear Information System (INIS)

    Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

    2004-01-01

    Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

  3. Synthesis of high-quality mesoporous silicon particles for enhanced lithium storage performance

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chundong, E-mail: apcdwang@hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Ren, Jianguo [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Chen, Hao [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Yi [School of Chemical Engineering and Pharmacy, Wuhan Institute of Technology, Wuhan, 430073 (China); Ostrikov, Kostya [School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane 4000, QLD (Australia); Manufacturing Flagship, CSIRO, P. O. Box 218, Lindfield, NSW 2070 (Australia); Zhang, Wenjun [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China)

    2016-04-15

    Silicon has been considered as one of the most promising anode materials for high-capacity lithium-ion batteries (LIBs) due to its ultrahigh theoretical capacity, abundance, and environmentally benign nature. Nonetheless, the severe break during the prolonged cycling results in poor electrochemical performance, which hinders its practical application. Herein, we report the synthesis of novel mesoporous silicon particles with a facile template method by using a magnesiothermic reduction for LIBs. The obtained silicon nanoparticles are highly porous with densely porous cavities (20–40 nm) on the wall, of which it presents good crystallization. Electrochemical measurements showed that the mesoporous silicon nanoparticles delivered a high reversible specific capacity of 910 mA h g{sup −1} at a high current density of 1200 mA g{sup −1} over 50 cycles. The specific capacity at such high current density is still over twofold than that of commercial graphite anode, suggesting that the nanoporous Si architectures is suitable for high-performance Si-based anodes for lithium ion batteries in terms of capacity, cycle life, and rate capacity. - Highlights: • Silica nanotubes were prepared with a facile template method. • Novel mesoporous silicon particles were obtained by magnesiothermic reduction. • High-Performance LIBs were achieved by using mesoporous Si particle Electrodes.

  4. Silicon nanowire structures as high-sensitive pH-sensors

    International Nuclear Information System (INIS)

    Belostotskaya, S O; Chuyko, O V; Kuznetsov, A E; Kuznetsov, E V; Rybachek, E N

    2012-01-01

    Sensitive elements for pH-sensors created on silicon nanostructures were researched. Silicon nanostructures have been used as ion-sensitive field effect transistor (ISFET) for the measurement of solution pH. Silicon nanostructures have been fabricated by 'top-down' approach and have been studied as pH sensitive elements. Nanowires have the higher sensitivity. It was shown, that sensitive element, which is made of 'one-dimensional' silicon nanostructure have bigger pH-sensitivity as compared with 'two-dimensional' structure. Integrated element formed from two p- and n-type nanowire ISFET ('inverter') can be used as high sensitivity sensor for local relative change [H+] concentration in very small volume.

  5. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    International Nuclear Information System (INIS)

    Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

    2010-01-01

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  6. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2010-02-15

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  7. High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

    Science.gov (United States)

    Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

    2018-02-01

    In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

  8. Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

    Science.gov (United States)

    Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

    2014-10-28

    Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

  9. High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates

    Science.gov (United States)

    Gu, Xiaodan; Liu, Zuwei; Gunkel, Ilja; Olynick, Deirdre; Russell, Thomas; University of Massachusetts Amherst Collaboration; Oxford Instrument Collaboration; Lawrence Berkeley National Lab Collaboration

    2013-03-01

    High-aspect-ratio sub-15 nm silicon trenches are fabricated directly from plasma etching of a block copolymer (BCP) mask. Polystyrene-b-poly(2-vinyl pyridine) (PS-b-P2VP) 40k-b-18k was spin coated and solvent annealed to form cylindrical structures parallel to the silicon substrate. The BCP thin film was reconstructed by immersion in ethanol and then subjected to an oxygen and argon reactive ion etching to fabricate the polymer mask. A low temperature ion coupled plasma with sulfur hexafluoride and oxygen was used to pattern transfer block copolymer structure to silicon with high selectivity (8:1) and fidelity. The silicon pattern was characterized by scanning electron microscopy and grazing incidence x-ray scattering. We also demonstrated fabrication of silicon nano-holes using polystyrene-b-polyethylene oxide (PS-b-PEO) using same methodology described above for PS-b-P2VP. Finally, we show such silicon nano-strucutre serves as excellent nano-imprint master template to pattern various functional materials like poly 3-hexylthiophene (P3HT).

  10. Modification of Light Emission in Si-Rich Silicon Nitride Films Versus Stoichiometry and Excitation Light Energy

    Science.gov (United States)

    Torchynska, T.; Khomenkova, L.; Slaoui, A.

    2018-04-01

    Si-rich SiN x films with different stoichiometry were grown on Si substrate by plasma-enhanced chemical vapor deposition. The Si content was varied by changing the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. Conventional furnace annealing at 1100°C for 30 min was applied to produce the Si quantum dots (QDs) in the SiN x films. Spectroscopic ellipsometry was used to determine the refractive index of the SiN x films that allowed estimating the film's stoichiometry. Fourier transform infrared spectroscopy has been also used to confirm the stoichiometry and microstructure. Photoluminescence (PL) spectra of Si-rich SiN x films are complex. A non-monotonous variation of the different PL peaks versus Si excess contents testifies to the competition of different radiative channels. The analysis of PL spectra, measured at the different excitation light energies and variable temperatures, has revealed that the PL bands with the peaks within the range 2.1-3.0 eV are related to the carrier recombination via radiative native defects in the SiN x host. Simultaneously, the PL bands with the peaks at 1.5-2.0 eV are caused by the exciton recombination in the Si QDs of different sizes. The way to control the SiN x emission is discussed.

  11. Metallurgical structures in a high uranium-silicon alloy

    International Nuclear Information System (INIS)

    Wyatt, B.S.; Berthiaume, L.C.; Conversi, J.L.

    1968-10-01

    The effects of fabrication and heat treatment variables on the structure of a uranium -- 3.96 wt% silicon alloy have been studied using optical microscopy, quantitative metallography and hardness determinations. It has been shown that an optimum temperature exists below the peritectoid temperature where the maximum amount of transformation to U 3 Si occurs in a given period of time. The time required to fully transform an as-cast alloy at this optimum temperature is affected by the size of the primary U 3 Si 2 dendrites. With a U 3 Si 2 particle size of <12 μm complete transformation can be achieved in four hours. (author)

  12. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor

    Science.gov (United States)

    2015-07-21

    Hybrid Biosensor Jieun Lee1,2, Jaeman Jang1, Bongsik Choi1, Jinsu Yoon1, Jee-Yeon Kim3, Yang-Kyu Choi3, Dong Myong Kim1, Dae Hwan Kim1 & Sung-Jin Choi1...This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response...of field-effect-transistor (FET)-based biosensors . The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential

  13. Direct excitation of a high frequency wave by a low frequency wave in a plasma

    International Nuclear Information System (INIS)

    Tanaka, Takayasu

    1993-01-01

    A new mechanism is presented of an excitation of a high frequency wave by a low frequency wave in a plasma. This mechanism works when the low frequency wave varies in time in a manner deviated from a usual periodic motion with a constant amplitude. The conversion rate is usually not large but the conversion is done without time delay after the variation of the low frequency wave. The Manley Rowe relation in the usual sense does not hold in this mechanism. This mechanism can excite also waves with same or lower frequencies. (author)

  14. Neutron emission in fission of highly excited californium nuclei (E*=76 MeV)

    International Nuclear Information System (INIS)

    Blinov, M.V.; Bordyug, V.M.; Kozulin, Eh.M.; Mozhaev, A.N.; Levitovich, M.; Muzychka, Yu.A.; Penionzhkevich, Yu.Eh.; Pustyl'nik, B.I.

    1990-01-01

    The differential cross sections for neutron production in the fission of highly excited californium nuclei formed in the 238 U+ 12 C (105 MeV) reaction have been measured. From the analysis of the experimental data is follows that the number of pre-fission neutrons substantially exceeds the value obtained in the framework of the standard statistical model. The saddle-to-scission time of the excited nucleus is estimated on the basis of the neutron multiplicity. The dependences of the neutron number and neutron average energies upon the fragment mass are determined

  15. Is neutron evaporation from highly excited nuclei a poisson random process

    International Nuclear Information System (INIS)

    Simbel, M.H.

    1982-01-01

    It is suggested that neutron emission from highly excited nuclei follows a Poisson random process. The continuous variable of the process is the excitation energy excess over the binding energy of the emitted neutrons and the discrete variable is the number of emitted neutrons. Cross sections for (HI,xn) reactions are analyzed using a formula containing a Poisson distribution function. The post- and pre-equilibrium components of the cross section are treated separately. The agreement between the predictions of this formula and the experimental results is very good. (orig.)

  16. Collision dynamics of methyl radicals and highly vibrationally excited molecules using crossed molecular beams

    International Nuclear Information System (INIS)

    Chu, P.M.Y.

    1991-10-01

    The vibrational to translational (V→T) energy transfer in collisions between large highly vibrationally excited polyatomics and rare gases was investigated by time-of-flight techniques. Two different methods, UV excitation followed by intemal conversion and infrared multiphoton excitation (IRMPE), were used to form vibrationally excited molecular beams of hexafluorobenzene and sulfur hexafluoride, respectively. The product translational energy was found to be independent of the vibrational excitation. These results indicate that the probability distribution function for V→T energy transfer is peaked at zero. The collisional relaxation of large polyatomic molecules with rare gases most likely occurs through a rotationally mediated process. Photodissociation of nitrobenzene in a molecular beam was studied at 266 nm. Two primary dissociation channels were identified including simple bond rupture to produce nitrogen dioxide and phenyl radical and isomerization to form nitric oxide and phenoxy radical. The time-of-flight spectra indicate that simple bond rupture and isomerization occurs via two different mechanisms. Secondary dissociation of the phenoxy radicals to carbon monoxide and cyclopentadienyl radicals was observed as well as secondary photodissociation of phenyl radical to give H atom and benzyne. A supersonic methyl radical beam source is developed. The beam source configuration and conditions were optimized for CH 3 production from the thermal decomposition of azomethane. Elastic scattering of methyl radical and neon was used to differentiate between the methyl radicals and the residual azomethane in the molecular beam

  17. Surface boiling - an obvious but like no other decay mode of highly excited atomic nuclei

    International Nuclear Information System (INIS)

    Toke, J.

    2012-01-01

    Essentials of a generalized compound nucleus model are introduced based on a concept of an open microcanonical ensemble which considers explicitly the role of the diffuse surface domain and of the thermal expansion of nuclear systems in the quest for maximum entropy. This obvious generalization offers a unique and universal thermodynamic framework for understanding the changes in the gross behavior of excited nuclear systems with increasing excitation energy and, specifically, the competition between different statistical decay modes, including classical evaporation and binary fission, but also the Coulomb fragmentation of excited systems into multiple fragments - the famed multifragmentation. Importantly, the formalism offers a natural explanation, in terms of boiling or spinodal vaporization, for the experimentally observed appearance of limiting excitation energy that can be thermalized by an exited nuclear system and the associated limiting temperature. It is shown that it is the thermal expansion that leads to volume boiling in an infinite matter and surface boiling in finite nuclei. The latter constitutes an important and universal, but hitherto unappreciated decay mode of highly excited nuclei, a mode here named surface spinodal vaporization. It is also shown that in iso-asymmetric systems, thermal expansion leads to what constitutes distillation - a decay mode here named distillative spinodal vaporization

  18. Dispersive excitations in the high-temperature superconductor La2-xSrxCuO4

    DEFF Research Database (Denmark)

    Christensen, N.B.; McMorrow, D.F.; Rønnow, H.M.

    2004-01-01

    High-resolution neutron scattering experiments on optimally doped La(2-x)Sr(x)CuO(4) (x=0.16) reveal that the magnetic excitations are dispersive. The dispersion is the same as in YBa(2)Cu(3)O(6.85), and is quantitatively related to that observed with charge sensitive probes. The associated veloc...

  19. Interqubit coupling mediated by a high-excitation-energy quantum object

    NARCIS (Netherlands)

    Ashhab, S.; Niskanen, A.O.; Harrabi, K.; Nakamura, Y.; Picot, T.; De Groot, P.C.; Harmans, C.J.P.M.; Mooij, J.E.; Nori, F.

    2008-01-01

    We consider a system composed of two qubits and a high excitation energy quantum object used to mediate coupling between the qubits. We treat the entire system quantum mechanically and analyze the properties of the eigenvalues and eigenstates of the total Hamiltonian. After reproducing well known

  20. On the Zeeman Effect in highly excited atoms: 2. Three-dimensional case

    International Nuclear Information System (INIS)

    Baseia, B.; Medeiros e Silva Filho, J.

    1984-01-01

    A previous result, found in two-dimensional hydrogen-atoms, is extended to the three-dimensional case. A mapping of a four-dimensional space R 4 onto R 3 , that establishes an equivalence between Coulomb and harmonic potentials, is used to show that the exact solution of the Zeeman effect in highly excited atoms, cannot be reached. (Author) [pt

  1. The temperature dependence of giant resonances in high-excited nucleus

    International Nuclear Information System (INIS)

    Li Ming; Song Hongqiu

    1991-01-01

    The Hartree-Fock equation and the linear response theory in finite temperature are used to calculate the positions and transition strenghths of the giant resonances of high-excited nucleus Pb 208 . The result shows a downward shift and a broadening of the giant resonance energies as temperatrue increases

  2. Enhanced Electron Attachment to Highly-Excited Molecules and Its Applications in Pulsed Plasmas

    International Nuclear Information System (INIS)

    Ding, W.X.; Ma, C.Y.; McCorkle, D.L.; Pinnaduwage, L.A.

    1999-01-01

    Studies conducted over the past several years have shown that electron attachment to highly-excited states of molecules have extremely large cross sections. We will discuss the implications of this for pulsed discharges used for H - generation, material processing, and plasma remediation

  3. Implications of electron attachment to highly-excited states in pulsed-power discharges

    International Nuclear Information System (INIS)

    Pinnaduwage, L.A.; Univ. of Tennessee, Knoxville, TN

    1997-01-01

    The author points out the possible implications of electron attachment to highly-excited states of molecules in two pulsed power technologies. One involves the pulsed H 2 discharges used for the generation of H ion beams for magnetic fusion energy and particle accelerators. The other is the power modulated plasma discharges used for material processing

  4. Carbon K-shell excitation in small molecules by high-resolution electron impact

    International Nuclear Information System (INIS)

    Tronc, M.; King, G.C.; Read, F.H.

    1979-01-01

    The excitation of 1s carbon electrons has been observed in C0, CH 4 , CF4, C0 2 , COS, C 2 H 2 and C 2 H 4 by means of the electron energy-loss technique with high resolution (70 meV in the 300 eV excitation energy range) and at an incident electron energy of 1.5 keV. The energies, widths and vibrational structures of excited states corresponding to the promotion of 1s carbon electrons to unoccupied valence and Rydberg orbitals have been obtained. The validity of the equivalent-core model, and the role of resonances caused by potential barriers, are discussed. (author)

  5. Low energy nuclear spin excitations in Ho metal investigated by high resolution neutron spectroscopy.

    Science.gov (United States)

    Chatterji, Tapan; Jalarvo, Niina

    2013-04-17

    We have investigated the low energy excitations in metallic Ho by high resolution neutron spectroscopy. We found at T = 3 K clear inelastic peaks in the energy loss and energy gain sides, along with the central elastic peak. The energy of this low energy excitation, which is 26.59 ± 0.02 μeV at T = 3 K, decreased continuously and became zero at TN ≈ 130 K. By fitting the data in the temperature range 100-127.5 K with a power law we obtained the power-law exponent β = 0.37 ± 0.02, which agrees with the expected value β = 0.367 for a three-dimensional Heisenberg model. Thus the energy of the low energy excitations can be associated with the order parameter.

  6. Beam-foil lifetimes of highly ionized silicon

    International Nuclear Information System (INIS)

    Traebert, E.; Heckmann, P.H.; Buttlar, H. v.

    1977-01-01

    Electronically excited states of Si ions are created by passing a 20 MeV Si 5+ beam through a thin carbon foil. The EUV-radiation (lambda = 13-61 nm) emitted by the beam is analyzed using a grazing-incidence spectrometer. From the decay curves, lifetimes of 24 low lying levels in Si VIII to Si XII and of the 4f and 5g levels of Si XI and Si XII are derived. Cascades from doubly excited states turn out to be an important contribution to the radiation observed. The lifetime values of this work are compared to theoretical data mainly of Wiese, Sinanoglu and Dankwort/Trefftz. Most experimental values agree with at least one of the theoretical values. The decay time 560 ps of the 2s2p 3 3 D 0 3 state of Si IX is clearly longer than the theoretical prediction (highest value 455 ps by Sinanoglu). (orig.) [de

  7. Metallurgy of high-silicon steel parts produced using Selective Laser Melting

    International Nuclear Information System (INIS)

    Garibaldi, Michele; Ashcroft, Ian; Simonelli, Marco; Hague, Richard

    2016-01-01

    The metallurgy of high-silicon steel (6.9%wt.Si) processed using Selective Laser Melting (SLM) is presented for the first time in this study. High-silicon steel has great potential as a soft magnetic alloy, but its employment has been limited due to its poor workability. The effect of SLM-processing on the metallurgy of the alloy is investigated in this work using microscopy, X-Ray Diffraction (XRD) and Electron Backscatter Diffraction (EBSD). XRD analysis suggests that the SLM high-silicon steel is a single ferritic phase (solid solution), with no sign of phase ordering. This is expected to have beneficial effects on the material properties, since ordering has been shown to make silicon steels more brittle and electrically conductive. For near-fully dense samples, columnar grains with a high aspect ratio and oriented along the build direction are found. Most importantly, a <001> fibre-texture along the build direction can be changed into a cube-texture when the qualitative shape of the melt-pool is altered (from shallow to deep) by increasing the energy input of the scanning laser. This feature could potentially open the path to the manufacture of three-dimensional grain-oriented high-silicon steels for electromechanical applications.

  8. A High-Voltage SOI CMOS Exciter Chip for a Programmable Fluidic Processor System.

    Science.gov (United States)

    Current, K W; Yuk, K; McConaghy, C; Gascoyne, P R C; Schwartz, J A; Vykoukal, J V; Andrews, C

    2007-06-01

    A high-voltage (HV) integrated circuit has been demonstrated to transport fluidic droplet samples on programmable paths across the array of driving electrodes on its hydrophobically coated surface. This exciter chip is the engine for dielectrophoresis (DEP)-based micro-fluidic lab-on-a-chip systems, creating field excitations that inject and move fluidic droplets onto and about the manipulation surface. The architecture of this chip is expandable to arrays of N X N identical HV electrode driver circuits and electrodes. The exciter chip is programmable in several senses. The routes of multiple droplets may be set arbitrarily within the bounds of the electrode array. The electrode excitation waveform voltage amplitude, phase, and frequency may be adjusted based on the system configuration and the signal required to manipulate a particular fluid droplet composition. The voltage amplitude of the electrode excitation waveform can be set from the minimum logic level up to the maximum limit of the breakdown voltage of the fabrication technology. The frequency of the electrode excitation waveform can also be set independently of its voltage, up to a maximum depending upon the type of droplets that must be driven. The exciter chip can be coated and its oxide surface used as the droplet manipulation surface or it can be used with a top-mounted, enclosed fluidic chamber consisting of a variety of materials. The HV capability of the exciter chip allows the generated DEP forces to penetrate into the enclosed chamber region and an adjustable voltage amplitude can accommodate a variety of chamber floor thicknesses. This demonstration exciter chip has a 32 x 32 array of nominally 100 V electrode drivers that are individually programmable at each time point in the procedure to either of two phases: 0deg and 180deg with respect to the reference clock. For this demonstration chip, while operating the electrodes with a 100-V peak-to-peak periodic waveform, the maximum HV electrode

  9. High precision silicon piezo resistive SMART pressure sensor

    International Nuclear Information System (INIS)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure 'module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the 'in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures

  10. High precision silicon piezo resistive SMART pressure sensor

    Science.gov (United States)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure `module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the `in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures.

  11. High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

    Science.gov (United States)

    Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

    2014-01-01

    A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

  12. Application of Excitation from Multiple Locations on a Simplified High-Lift System

    Science.gov (United States)

    Melton, LaTunia Pack; Yao, Chung-Sheng; Seifert, Avi

    2004-01-01

    A series of active flow control experiments were recently conducted on a simplified high-lift system. The purpose of the experiments was to explore the prospects of eliminating all but simply hinged leading and trailing edge flaps, while controlling separation on the supercritical airfoil using multiple periodic excitation slots. Excitation was provided by three. independently controlled, self-contained, piezoelectric actuators. Low frequency excitation was generated through amplitude modulation of the high frequency carrier wave, the actuators' resonant frequencies. It was demonstrated, for the first time, that pulsed modulated signal from two neighboring slots interact favorably to increase lift. Phase sensitivity at the low frequency was measured, even though the excitation was synthesized from the high-frequency carrier wave. The measurements were performed at low Reynolds numbers and included mean and unsteady surface pressures, surface hot-films, wake pressures and particle image velocimetry. A modest (6%) increase in maximum lift (compared to the optimal baseline) was obtained due t o the activation of two of the three actuators.

  13. Analysis of heating effect on the process of high deposition rate microcrystalline silicon

    International Nuclear Information System (INIS)

    Xiao-Dan, Zhang; He, Zhang; Chang-Chun, Wei; Jian, Sun; Guo-Fu, Hou; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

    2010-01-01

    A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated

  14. A high volume cost efficient production macrostructuring process. [for silicon solar cell surface treatment

    Science.gov (United States)

    Chitre, S. R.

    1978-01-01

    The paper presents an experimentally developed surface macro-structuring process suitable for high volume production of silicon solar cells. The process lends itself easily to automation for high throughput to meet low-cost solar array goals. The tetrahedron structure observed is 0.5 - 12 micron high. The surface has minimal pitting with virtually no or very few undeveloped areas across the surface. This process has been developed for (100) oriented as cut silicon. Chemi-etched, hydrophobic and lapped surfaces were successfully texturized. A cost analysis as per Samics is presented.

  15. High quality silicon-based substrates for microwave and millimeter wave passive circuits

    Science.gov (United States)

    Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

    2017-09-01

    Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

  16. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    Science.gov (United States)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  17. Exciter switch

    Science.gov (United States)

    Mcpeak, W. L.

    1975-01-01

    A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

  18. Study of ultra-high gradient wakefield excitation by intense ultrashort laser pulses in plasma

    International Nuclear Information System (INIS)

    Kotaki, Hideyuki

    2002-12-01

    We investigate a mechanism of nonlinear phenomena in laser-plasma interaction, a laser wakefield excited by intense laser pulses, and the possibility of generating an intense bright electron source by an intense laser pulse. We need to understand and further employ some of these phenomena for our purposes. We measure self-focusing, filamentation, and the anomalous blueshift of the laser pulse. The ionization of gas with the self-focusing causes a broad continuous spectrum with blueshift. The normal blueshift depends on the laser intensity and the plasma density. We, however, have found different phenomenon. The laser spectrum shifts to fixed wavelength independent of the laser power and gas pressure above some critical power. We call the phenomenon 'anomalous blueshift'. The results are explained by the formation of filaments. An intense laser pulse can excite a laser wakefield in plasma. The coherent wakefield excited by 2 TW, 50 fs laser pulses in a gas-jet plasma around 10 18 cm -3 is measured with a time-resolved frequency domain interferometer (FDI). The density distribution of the helium gas is measured with a time-resolved Mach-Zehnder interferometer to search for the optimum laser focus position and timing in the gas-jet. The results show an accelerating wakefield excitation of 20 GeV/m with good coherency, which is useful for ultrahigh gradient particle acceleration in a compact system. This is the first time-resolved measurement of laser wakefield excitation in a gas-jet plasma. The experimental results are compared with a Particle-in-Cell (PIC) simulation. The pump-probe interferometer system of FDI and the anomalous blueshift will be modified to the optical injection system as a relativistic electron beam injector. In 1D PIC simulation we obtain the results of high quality intense electron beam acceleration. These results illuminate the possibility of a high energy and a high quality electron beam acceleration. (author)

  19. Ultra-High Capacity Silicon Photonic Interconnects through Spatial Multiplexing

    Science.gov (United States)

    Chen, Christine P.

    The market for higher data rate communication is driving the semiconductor industry to develop new techniques of writing at smaller scales, while continuing to scale bandwidth at low power consumption. Silicon photonic (SiPh) devices offer a potential solution to the electronic interconnect bandwidth bottleneck. SiPh leverages the technology commensurate of decades of fabrication development with the unique functionality of next-generation optical interconnects. Finer fabrication techniques have allowed for manufacturing physical characteristics of waveguide structures that can support multiple modes in a single waveguide. By refining modal characteristics in photonic waveguide structures, through mode multiplexing with the asymmetric y-junction and microring resonator, higher aggregate data bandwidth is demonstrated via various combinations of spatial multiplexing, broadening applications supported by the integrated platform. The main contributions of this dissertation are summarized as follows. Experimental demonstrations of new forms of spatial multiplexing combined together exhibit feasibility of data transmission through mode-division multiplexing (MDM), mode-division and wavelength-division multiplexing (MDM-WDM), and mode-division and polarization-division multiplexing (MDM-PDM) through a C-band, Si photonic platform. Error-free operation through mode multiplexers and demultiplexers show how data can be viably scaled on multiple modes and with existing spatial domains simultaneously. Furthermore, we explore expanding device channel support from two to three arms. Finding that a slight mismatch in the third arm can increase crosstalk contributions considerably, especially when increasing data rate, we explore a methodical way to design the asymmetric y-junction device by considering its angles and multiplexer/demultiplexer arm width. By taking into consideration device fabrication variations, we turn towards optimizing device performance post

  20. Electrothermal Behavior of High-Frequency Silicon-On-Glass Transistors

    NARCIS (Netherlands)

    Nenadovic, N.

    2004-01-01

    In this thesis, research is focused on the investigation of electrothermal effects in high-speed silicon transistors. At high current levels the power dissipation in these devices can lead to heating of both the device itself and the adjacent devices. In advanced transistors these effects are

  1. Testing hadronic interaction models using a highly granular silicon-tungsten calorimeter

    Czech Academy of Sciences Publication Activity Database

    Bilki, B.; Repond, J.; Schlereth, J.; Cvach, Jaroslav; Gallus, Petr; Havránek, Miroslav; Janata, Milan; Kvasnička, Jiří; Lednický, Richard; Marčišovský, Michal; Polák, Ivo; Popule, Jiří; Tomášek, Lukáš; Tomášek, Michal; Růžička, Pavel; Šícho, Petr; Smolík, Jan; Vrba, Václav; Zálešák, Jaroslav

    2015-01-01

    Roč. 794, Sep (2015), s. 240-254 ISSN 0168-9002 R&D Projects: GA MŠk LG14033 Institutional support: RVO:68378271 Keywords : electromagnetic silicon tungsten calorimeter * highly granular detectors * hadronic showers * data and simulations Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.200, year: 2015

  2. Formation of excited states in high-Z helium-like systems

    International Nuclear Information System (INIS)

    Fritzsche, S.; Fricke, B.; Brinzanescu, O.

    1999-12-01

    High-Z helium-like ions represent the simplest multi-electron systems for studying the interplay between electron-electron correlations, relativistic as well as quantum electrodynamical effects in strong fields. In contrast to the adjacent lithium-like ions, however, almost no experimental information is available about the excited states in the high-Z domain of the helium sequence. Here, we present a theoretical analysis of the X-ray production and decay dynamics of the excited states in helium-like uranium. Emphasize has been paid particularly to the formation of the 3 P 0 and 3 P 2 levels by using electron capture into hydrogen-like U 91+ . Both states are of interest for precise measurements on high-Z helium-like ions in the future. (orig.)

  3. The millimeter-wave spectrum of highly vibrationally excited SiO

    International Nuclear Information System (INIS)

    Mollaaghababa, R.; Gottlieb, C.A.; Vrtilek, J.M.; Thaddeus, P.

    1991-01-01

    The millimeter-wave rotational spectra of SiO in high vibrational states (v = 0-40) in its electronic ground state were measured between 228 and 347 GHz in a laboratory discharge through SiH4 and CO. On ascending the vibrational ladder, populations decline precipitously for the first few levels, with a vibrational temperature of about 1000 K; at v of roughly 3, however, they markedly flatten out, and from there to v of roughly 40 the temperature is of the order of 10,000 K. With the Dunham coefficients determined here, the rotational spectrum of highly vibrationally excited SiO can now be calculated into the far-infrared to accuracies required for radioastronomy. Possible astronomical sources of highly vibrationally excited SiO are certain stellar atmospheres, ultracompact H II regions, very young supernova ejecta, and dense interstellar shocks. 16 refs

  4. Fundamental understanding and development of low-cost, high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

    2000-05-01

    The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

  5. Radiation-hard silicon photonics for high energy physics and beyond

    CERN Multimedia

    CERN. Geneva

    2016-01-01

    Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

  6. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    DEFF Research Database (Denmark)

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

    2017-01-01

    is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

  7. Silicon Nanocrystal Synthesis in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

  8. Hierarchical columnar silicon anode structures for high energy density lithium sulfur batteries

    Science.gov (United States)

    Piwko, Markus; Kuntze, Thomas; Winkler, Sebastian; Straach, Steffen; Härtel, Paul; Althues, Holger; Kaskel, Stefan

    2017-05-01

    Silicon is a promising anode material for next generation lithium secondary batteries. To significantly increase the energy density of state of the art batteries with silicon, new concepts have to be developed and electrode structuring will become a key technology. Structuring is essential to reduce the macroscopic and microscopic electrode deformation, caused by the volume change during cycling. We report pulsed laser structuring for the generation of hierarchical columnar silicon films with outstanding high areal capacities up to 7.5 mAh cm-2 and good capacity retention. Unstructured columnar electrodes form a micron-sized block structure during the first cycle to compensate the volume expansion leading to macroscopic electrode deformation. At increased silicon loading, without additional structuring, pronounced distortion and the formation of cracks through the current collector causes cell failure. Pulsed laser ablation instead is demonstrated to avoid macroscopic electrode deformation by initial formation of the block structure. A full cell with lithiated silicon versus a carbon-sulfur cathode is assembled with only 15% overbalanced anode and low electrolyte amount (8 μl mgsulfur-1). While the capacity retention over 50 cycles is identical to a cell with high excess lithium anode, the volumetric energy density could be increased by 30%.

  9. Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Tokuda, Yutaka; Inoue, Yajiro; Usami, Akira

    1987-01-01

    Defects in high-resistivity neutron-transmutation-doped (NTD) silicon prior to annealing were studied by photo-induced current transient spectroscopy (PICTS). The thermal-neutron fluence was 9.5 x 10 17 cm -2 to give a resistivity of about 30 Ω after annealing, and the fast-neutron fluence was 9.5 x 10 16 cm -2 . Four traps with thermal emission activation energies of 0.15, 0.41. 0.47 and 0.50 eV were observed in NTD silicon. A trap with the thermal emission activation energy of 0.15 eV was considered to correspond to the divacancy. Although the clustered nature of the defects was observed, PICTS measurements suggest that the material state of high-resistivity NTD silicon is still crystalline and not amorphous. (author)

  10. A III-V nanowire channel on silicon for high-performance vertical transistors.

    Science.gov (United States)

    Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

    2012-08-09

    Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

  11. Signatures of fission dynamics in highly excited nuclei produced in 197AU(800 A MeV) on proton collisions

    International Nuclear Information System (INIS)

    Benlliure, J.; Armbruster, P.; Bernas, M.

    2001-09-01

    197 Au(800 A MeV)-on-proton collisions are used to investigate the fission dynamics at high excitation energy. The kinematic properties together with the isotopic identification of the fission fragments allow to determine the mass, charge and excitation energy of the fissioning nucleus at saddle. The comparison of these observables and the measured total fission cross section with model calculations evidences a clear hindrance of fission at high excitation energy that can be explained in terms of nuclear dissipation. Assuming a statistical evaporation for other de-excitation channels than fission, an estimated value of the transient time of fission of (3 ± 1) . 10 -21 s is obtained. (orig.)

  12. Optical excitation and electron relaxation dynamics at semiconductor surfaces: a combined approach of density functional and density matrix theory applied to the silicon (001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Buecking, N

    2007-11-05

    In this work a new theoretical formalism is introduced in order to simulate the phononinduced relaxation of a non-equilibrium distribution to equilibrium at a semiconductor surface numerically. The non-equilibrium distribution is effected by an optical excitation. The approach in this thesis is to link two conventional, but approved methods to a new, more global description: while semiconductor surfaces can be investigated accurately by density-functional theory, the dynamical processes in semiconductor heterostructures are successfully described by density matrix theory. In this work, the parameters for density-matrix theory are determined from the results of density-functional calculations. This work is organized in two parts. In Part I, the general fundamentals of the theory are elaborated, covering the fundamentals of canonical quantizations as well as the theory of density-functional and density-matrix theory in 2{sup nd} order Born approximation. While the formalism of density functional theory for structure investigation has been established for a long time and many different codes exist, the requirements for density matrix formalism concerning the geometry and the number of implemented bands exceed the usual possibilities of the existing code in this field. A special attention is therefore attributed to the development of extensions to existing formulations of this theory, where geometrical and fundamental symmetries of the structure and the equations are used. In Part II, the newly developed formalism is applied to a silicon (001)surface in a 2 x 1 reconstruction. As first step, density-functional calculations using the LDA functional are completed, from which the Kohn-Sham-wave functions and eigenvalues are used to calculate interaction matrix elements for the electron-phonon-coupling an the optical excitation. These matrix elements are determined for the optical transitions from valence to conduction bands and for electron-phonon processes inside the

  13. High Sensitivity and High Detection Specificity of Gold-Nanoparticle-Grafted Nanostructured Silicon Mass Spectrometry for Glucose Analysis.

    Science.gov (United States)

    Tsao, Chia-Wen; Yang, Zhi-Jie

    2015-10-14

    Desorption/ionization on silicon (DIOS) is a high-performance matrix-free mass spectrometry (MS) analysis method that involves using silicon nanostructures as a matrix for MS desorption/ionization. In this study, gold nanoparticles grafted onto a nanostructured silicon (AuNPs-nSi) surface were demonstrated as a DIOS-MS analysis approach with high sensitivity and high detection specificity for glucose detection. A glucose sample deposited on the AuNPs-nSi surface was directly catalyzed to negatively charged gluconic acid molecules on a single AuNPs-nSi chip for MS analysis. The AuNPs-nSi surface was fabricated using two electroless deposition steps and one electroless etching step. The effects of the electroless fabrication parameters on the glucose detection efficiency were evaluated. Practical application of AuNPs-nSi MS glucose analysis in urine samples was also demonstrated in this study.

  14. Stand-alone front-end system for high- frequency, high-frame-rate coded excitation ultrasonic imaging.

    Science.gov (United States)

    Park, Jinhyoung; Hu, Changhong; Shung, K Kirk

    2011-12-01

    A stand-alone front-end system for high-frequency coded excitation imaging was implemented to achieve a wider dynamic range. The system included an arbitrary waveform amplifier, an arbitrary waveform generator, an analog receiver, a motor position interpreter, a motor controller and power supplies. The digitized arbitrary waveforms at a sampling rate of 150 MHz could be programmed and converted to an analog signal. The pulse was subsequently amplified to excite an ultrasound transducer, and the maximum output voltage level achieved was 120 V(pp). The bandwidth of the arbitrary waveform amplifier was from 1 to 70 MHz. The noise figure of the preamplifier was less than 7.7 dB and the bandwidth was 95 MHz. Phantoms and biological tissues were imaged at a frame rate as high as 68 frames per second (fps) to evaluate the performance of the system. During the measurement, 40-MHz lithium niobate (LiNbO(3)) single-element lightweight (<;0.28 g) transducers were utilized. The wire target measure- ment showed that the -6-dB axial resolution of a chirp-coded excitation was 50 μm and lateral resolution was 120 μm. The echo signal-to-noise ratios were found to be 54 and 65 dB for the short burst and coded excitation, respectively. The contrast resolution in a sphere phantom study was estimated to be 24 dB for the chirp-coded excitation and 15 dB for the short burst modes. In an in vivo study, zebrafish and mouse hearts were imaged. Boundaries of the zebrafish heart in the image could be differentiated because of the low-noise operation of the implemented system. In mouse heart images, valves and chambers could be readily visualized with the coded excitation.

  15. Electron energy distributions and excitation rates in high-frequency argon discharges

    International Nuclear Information System (INIS)

    Ferreira, C.M.; Loureiro, J.

    1983-06-01

    The electron energy distribution functions and rate coefficients for excitation and ionisation in argon under the action of an uniform high-frequency electric field were calculated by numerically solving the homogeneous Boltzmann equation. Analytic calculations in the limiting cases ω>>νsub(c) and ω<<νsub(c), where ω is the wave angular frequency and νsub(c) is the electron-neutral collision frequency for momentum transfer, are also presented and shown to be in very good agreement with the numerical computations. The results reported here are relevant for the modelling of high-frequency discharges in argon and, in particular, for improving recent theoretical descriptions of a plasma column sustained by surface microwaves. The properties of surface wave produced plasmas make them interesting as possible substitutes for other more conventional plasma sources for such important applications as plasma chemistry laser excitation, plasma etching spectroscopic sources etc...

  16. High-resolution ion-implanted silicon detectors

    International Nuclear Information System (INIS)

    von Borany, J.; Schmidt, B.

    1985-01-01

    An account is given of the properties of silicon detectors developed at the Central Institute of Nuclear Research of the Academy of Sciences of the German Democratic Republic (Rossendorf) and made by a special planar technology using ion implantation, anodic oxidation, thermal oxidation in an oxygen atmosphere containing HCl, and annealing by pulses of 10--20 msec duration. The resolution for α particles of 5.5 MeV energy was 11.2 keV (active area A 2 ). The detectors were characterized by a low intrinsic noise (< or =5 keV), so that they could be used for spectrometry of low-energy electrons (E/sub e/< or =250 keV). In a certain range of energies (E/sub x/ = 15--60 keV) it was possible to use these detectors for spectrometry of x rays at room temperature. Examples and results of applications of detectors in radiation chemistry (investigations of backscattering of particles and nuclear reaction spectroscopy) are given. The feasibility of annealing of radiation defects in such detectors after irradiation with a large dose of charged particles is considered

  17. The population transfer of high excited states of Rydberg lithium atoms in a microwave field

    International Nuclear Information System (INIS)

    Jiang Lijuan; Zhang Xianzhou; Ma Huanqiang; Jia Guangrui; Zhang Yonghui; Xia Lihua

    2012-01-01

    Using the time-dependent multilevel approach (TDMA), the properties of high excited Rydberg lithium atom have been obtained in the microwave field. The population transfer of lithium atom are studied on numerical calculation, quantum states are controlled and manipulated by microwave field. It shows that the population can be completely transferred to the target state by changing the chirped rate and field amplitude. (authors)

  18. Simulation of statistical γ-spectra of highly excited rare earth nuclei

    International Nuclear Information System (INIS)

    Schiller, A.; Munos, G.; Guttormsen, M.; Bergholt, L.; Melby, E.; Rekstad, J.; Siem, S.; Tveter, T.S.

    1997-05-01

    The statistical γ-spectra of highly excited even-even rare earth nuclei are simulated applying appropriate level density and strength function to a given nucleus. Hindrance effects due to K-conservation are taken into account. Simulations are compared to experimental data from the 163 Dy( 3 He,α) 162 Dy and 173 Yb( 3 He,α) 172 Yb reactions. The influence of the K quantum number at higher energies is discussed. 21 refs., 7 figs., 2 tabs

  19. Recoil implantation of boron into silicon by high energy silicon ions

    Science.gov (United States)

    Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

    2001-07-01

    A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

  20. Use of Monocrystalline Silicon as Tool Material for Highly Accurate Blanking of Thin Metal Foils

    International Nuclear Information System (INIS)

    Hildering, Sven; Engel, Ulf; Merklein, Marion

    2011-01-01

    The trend towards miniaturisation of metallic mass production components combined with increased component functionality is still unbroken. Manufacturing these components by forming and blanking offers economical and ecological advantages combined with the needed accuracy. The complexity of producing tools with geometries below 50 μm by conventional manufacturing methods becomes disproportional higher. Expensive serial finishing operations are required to achieve an adequate surface roughness combined with accurate geometry details. A novel approach for producing such tools is the use of advanced etching technologies for monocrystalline silicon that are well-established in the microsystems technology. High-precision vertical geometries with a width down to 5 μm are possible. The present study shows a novel concept using this potential for the blanking of thin copper foils with monocrystallline silicon as a tool material. A self-contained machine-tool with compact outer dimensions was designed to avoid tensile stresses in the brittle silicon punch by an accurate, careful alignment of the punch, die and metal foil. A microscopic analysis of the monocrystalline silicon punch shows appropriate properties regarding flank angle, edge geometry and surface quality for the blanking process. Using a monocrystalline silicon punch with a width of 70 μm blanking experiments on as-rolled copper foils with a thickness of 20 μm demonstrate the general applicability of this material for micro production processes.

  1. Silicene Flowers: A Dual Stabilized Silicon Building Block for High-Performance Lithium Battery Anodes.

    Science.gov (United States)

    Zhang, Xinghao; Qiu, Xiongying; Kong, Debin; Zhou, Lu; Li, Zihao; Li, Xianglong; Zhi, Linjie

    2017-07-25

    Nanostructuring is a transformative way to improve the structure stability of high capacity silicon for lithium batteries. Yet, the interface instability issue remains and even propagates in the existing nanostructured silicon building blocks. Here we demonstrate an intrinsically dual stabilized silicon building block, namely silicene flowers, to simultaneously address the structure and interface stability issues. These original Si building blocks as lithium battery anodes exhibit extraordinary combined performance including high gravimetric capacity (2000 mAh g -1 at 800 mA g -1 ), high volumetric capacity (1799 mAh cm -3 ), remarkable rate capability (950 mAh g -1 at 8 A g -1 ), and excellent cycling stability (1100 mA h g -1 at 2000 mA g -1 over 600 cycles). Paired with a conventional cathode, the fabricated full cells deliver extraordinarily high specific energy and energy density (543 Wh kg ca -1 and 1257 Wh L ca -1 , respectively) based on the cathode and anode, which are 152% and 239% of their commercial counterparts using graphite anodes. Coupled with a simple, cost-effective, scalable synthesis approach, this silicon building block offers a horizon for the development of high-performance batteries.

  2. Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics.

    Science.gov (United States)

    Ghoneim, Mohamed Tarek; Hussain, Muhammad Mustafa

    2017-04-01

    A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-02-01

    A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.

  4. Powerful highly efficient KrF lamps excited by surface and barrier discharges

    International Nuclear Information System (INIS)

    Borisov, V M; Vodchits, V A; El'tsov, A V; Khristoforov, O B

    1998-01-01

    An investigation was made of the characteristics of KrF lamps with different types of excitation by surface and barrier discharges in which the dielectric material was sapphire. The conditions were determined for the attainment of an extremely high yield of the KrF* fluorescence with the internal efficiency η in ∼30 % and 22% for pulsed surface and barrier discharges, respectively. A homogeneous surface discharge was maintained without gas circulation when the pulse repetition rate was 5 x 10 4 Hz. Quasicontinuous excitation of a surface discharge at near-atmospheric pressure made it possible to reach a KrF* fluorescence power density of about 80 W cm -3 , which was close to the limit set by the kinetics of the gaseous medium. Under prolonged excitation conditions the intensity of the UV output radiation was limited by the permissible heating of the gas to a temperature above which the operating life of the gaseous mixture containing fluorine fell steeply. This was the reason for the advantage of surface over barrier discharges: the former were characterised by a high thermal conductivity of a thin (∼0.2 mm) plasma layer on the surface of the cooled dielectric, which made it possible to construct powerful highly efficient KrF and ArF lamps emitting UV radiation of up to 1 W cm -2 intensity. (laser system components)

  5. Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide

    DEFF Research Database (Denmark)

    Lin, Li; Ou, Yiyu; Aagesen, Martin

    2017-01-01

    A nano-patterning approach on silicon dioxide (SiO2) material, which could be used for the selective growth of III-V nanowires in photovoltaic applications, is demonstrated. In this process, a silicon (Si) stamp with nanopillar structures was first fabricated using electron-beam lithography (EBL....... In addition, high time efficiency can be realized by one-spot electron-beam exposure in the EBL process combined with NIL for mass production. Furthermore, the one-spot exposure enables the scalability of the nanostructures for different application requirements by tuning only the exposure dose. The size...

  6. High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

    International Nuclear Information System (INIS)

    Caër, Charles; Le Roux, Xavier; Cassan, Eric

    2013-01-01

    We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics

  7. Extraction-spectrophotometric method for silicon determination in high-purity substances. 1. Silicon determination in tellurium

    Energy Technology Data Exchange (ETDEWEB)

    Shaburova, V P; Yudelevich, I G [AN SSSR, Novosibirsk (USSR). Inst. Neorganicheskoj Khimii

    1989-01-01

    The extraction-spectrophotometric method for silicon determination in tellurium based on extraction isolation of the base by tributyl phosphate from hydrochloride solutions and with addition of HNO/sub 3/ and spectrophotometric silicon determination using malachite green is developed. The method permits to determine 2x10/sup -1/-3x10/sup -4/ % Si.

  8. Electromechanical stability of electro-active silicone filled with high permittivity particles undergoing large deformation

    International Nuclear Information System (INIS)

    Liu, Liwu; Liu, Yanju; Zhang, Zhen; Leng, Jinsong; Li, Bo

    2010-01-01

    In this paper, an expression for the permittivity of electro-active silicone undergoing large deformation with high permittivity particles filled uniformly has been proposed. Two expressions are proposed for the permittivity, one based on experimental tests and the other based on the theory of composite material. By applying the thermodynamic model incorporating linear dielectric permittivity and nonlinear hyperelastic performance, the mechanical performance and electromechanical stability of the coupling system constituted by silicone filled with PMN–PT have been studied. The results show that the critical electric field decreases, namely the stability performance of the system declines when the content of PMN–PT c(v) increases and the electrostrictive coefficients increase. The results are beneficial for us to understand deeply the influence of the filled particle on the stability performance of silicone and to guide the design and manufacture of actuators and sensors based on dielectric elastomers

  9. Challenges and solutions for high-volume testing of silicon photonics

    Science.gov (United States)

    Polster, Robert; Dai, Liang Yuan; Oikonomou, Michail; Cheng, Qixiang; Rumley, Sebastien; Bergman, Keren

    2018-02-01

    The first generation of silicon photonic products is now commercially available. While silicon photonics possesses key economic advantages over classical photonic platforms, it has yet to become a commercial success because these advantages can be fully realized only when high-volume testing of silicon photonic devices is made possible. We discuss the costs, challenges, and solutions of photonic chip testing as reported in the recent research literature. We define and propose three underlying paradigms that should be considered when creating photonic test structures: Design for Fast Coupling, Design for Minimal Taps, and Design for Parallel Testing. We underline that a coherent test methodology must be established prior to the design of test structures, and demonstrate how an optimized methodology dramatically reduces the burden when designing for test, by reducing the needed complexity of test structures.

  10. Excitation of high numbers harmonics by flows of oscillators in a periodic potential

    International Nuclear Information System (INIS)

    Buts, V.A.; Marekha, V.I.; Tolstoluzhsky, A.P.

    2005-01-01

    It is shown that the maximum of radiation spectrum of nonrelativistic oscillators, which move into a periodically inhomogeneous potential, can be in the region of high numbers harmonics. Spectrum of such oscillators radiation becomes similar to the radiation spectrum of relativistic oscillators. The equations, describing the non-linear self-consistent theory of excitations, of high numbers harmonics by ensemble of oscillators are formulated and its numerical analysis is conducted. The numerical analysis has confirmed the capability of radiation of high numbers of harmonics. Such peculiarity of radiation allows t expect of creation of nonrelativistic FEL

  11. HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

    Energy Technology Data Exchange (ETDEWEB)

    Sturm, James [Princeton Univ., NJ (United States)

    2017-12-04

    This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

  12. High temperature Hexoloy{trademark} SX silicon carbide. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Srinivasan, G.V.; Lau, S.K.; Storm, R.S. [Carborundum Co., Niagara Falls, NY (United States)

    1994-09-01

    HEXOLOY{reg_sign} SX-SiC, fabricated with Y and Al containing compounds as sintering aids, has been shown to possess significantly improved strength and toughness over HEXOLOY{reg_sign}SA-SiC. This study was undertaken to establish and benchmark the complete mechanical property database of a first generation material, followed by a process optimization task to further improve the properties. Mechanical characterization on the first generation material indicated that silicon-rich pools, presumably formed as a reaction product during sintering, controlled the strength from room temperature to 1,232 C. At 1,370 C in air, the material was failing due to a glass-phase formation at the surface. This glass-phase formation was attributed to the reaction of yttrium aluminates, which exist as a second phase in the material, with the ambient. This process was determined to be a time-dependent one that leads to slow crack growth. Fatigue experiments clearly indicated that the slow crack growth driven by the reaction occurred only at temperatures >1,300 C, above the melting point of the glass phase. Process optimization tasks conducted included the selection of the best SiC powder source, studies on mixing/milling conditions for SiC powder with the sintering aids, and a designed experiment involving a range of sintering and post-treatment conditions. The optimization study conducted on the densification variables indicated that lower sintering temperatures and higher post-treatment pressures reduce the Si-rich pool formation, thereby improving the room-temperature strength. In addition, it was also determined that furnacing configuration and atmosphere were critical in controlling the Si-rich formation.

  13. Radiation damage in silicon exposed to high-energy protons

    International Nuclear Information System (INIS)

    Davies, Gordon; Hayama, Shusaku; Murin, Leonid; Krause-Rehberg, Reinhard; Bondarenko, Vladimir; Sengupta, Asmita; Davia, Cinzia; Karpenko, Anna

    2006-01-01

    Photoluminescence, infrared absorption, positron annihilation, and deep-level transient spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 GeV/c protons in crystalline silicon. The irradiation doses and the concentrations of carbon and oxygen in the samples have been chosen to monitor the mobility of the damage products. Single vacancies (and self-interstitials) are introduced at the rate of ∼1 cm -1 , and divacancies at 0.5 cm -1 . Stable di-interstitials are formed when two self-interstitials are displaced in one damage event, and they are mobile at room temperature. In the initial stages of annealing the evolution of the point defects can be understood mainly in terms of trapping at the impurities. However, the positron signal shows that about two orders of magnitude more vacancies are produced by the protons than are detected in the point defects. Damage clusters exist, and are largely removed by annealing at 700 to 800 K, when there is an associated loss of broad band emission between 850 and 1000 meV. The well-known W center is generated by restructuring within clusters, with a range of activation energies of about 1.3 to 1.6 eV, reflecting the disordered nature of the clusters. Comparison of the formation of the X centers in oxygenated and oxygen-lean samples suggests that the J defect may be interstitial related rather than vacancy related. To a large extent, the damage and annealing behavior may be factorized into point defects (monitored by sharp-line optical spectra and DLTS) and cluster defects (monitored by positron annihilation and broadband luminescence). Taking this view to the limit, the generation rates for the point defects are as predicted by simply taking the damage generated by the Coulomb interaction of the protons and Si nuclei

  14. Performance of a silicon microstrip detector in a high radiation environment

    International Nuclear Information System (INIS)

    Mishra, C.S.; Brown, C.N.; Kapustinsky, J.; Leitch, M.J.; McGaughey, P.L.; Peng, J.C.; Sailor, W.; Holzscheiter, K.; Sadler, M.

    1990-01-01

    This paper reports on the performance of a silicon microstrip detector that has been studied in a high rate environment using electron, pion, and proton beams. The pulse height, time response, and leakage current have been studied as a function of particle fluence up to a total integrated flus of about 4 x 10 14 protons/cm 2

  15. Ultra-high efficiency, fast graphene micro-heater on silicon

    DEFF Research Database (Denmark)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn

    2017-01-01

    We demonstrate an ultra-high efficiency and fast graphene microheater on silicon photonic crystal waveguide. By taking advantage of slow-light effect, a tuning efficiency of 1.07 nm/mW and power consumption per free spectral range of 3.99 mW. A fast rise and decay times (10% to 90%) of only 750 ns...

  16. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    NARCIS (Netherlands)

    Liu, Y.|info:eu-repo/dai/nl/304831743

    2010-01-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary

  17. Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

    Science.gov (United States)

    Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

    2015-10-05

    In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

  18. Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates

    NARCIS (Netherlands)

    Evseev, S. B.; Milosavljevic, S.; Nanver, L. K.

    2017-01-01

    Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between

  19. Compact high-efficiency vortex beam emitter based on a silicon photonics micro-ring

    DEFF Research Database (Denmark)

    Li, Shimao; Ding, Yunhong; Guan, Xiaowei

    2018-01-01

    Photonic integrated devices that emit vortex beam carrying orbital angular momentum are becoming key components for multiple applications. Here we propose and demonstrate a high-efficiency vortex beam emitter based on a silicon micro-ring resonator integrated with a metal mirror. Such a compact...

  20. Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

    KAUST Repository

    Cui, Li-Feng

    2009-09-09

    We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires showed great performance as anode material. Since carbon has a much smaller capacity compared to silicon, the carbon core experiences less structural stress or damage during lithium cycling and can function as a mechanical support and an efficient electron conducting pathway. These nanowires have a high charge storage capacity of ∼2000 mAh/g and good cycling life. They also have a high Coulmbic efficiency of 90% for the first cycle and 98-99.6% for the following cycles. A full cell composed of LiCoO2 cathode and carbon-silicon core-shell nanowire anode is also demonstrated. Significantly, using these core-shell nanowires we have obtained high mass loading and an area capacity of ∼4 mAh/cm2, which is comparable to commercial battery values. © 2009 American Chemical Society.

  1. Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures

    NARCIS (Netherlands)

    de Boer, Meint J.; Gardeniers, Johannes G.E.; Jansen, Henricus V.; Gilde, M.J.; Roelofs, Gerard; Sasserath, Jay N.; Elwenspoek, Michael Curt

    This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF6/O2-based high-density plasmas at cryogenic temperatures. Procedures of how to tune the equipment for optimal results with respect to etch rate and profile control are described. Profile

  2. Signal generation in highly irradiated silicon microstrip detectors for the ATLAS experiment

    International Nuclear Information System (INIS)

    Ruggiero, Gennaro

    2003-01-01

    Silicon detectors are the most diffused tracking devices in High Energy Physics (HEP). The reason of such success can be found in the characteristics of the material together with the existing advanced technology for the fabrication of these devices. Nevertheless in many modem HEP experiments the observation of vary rare events require data taking at high luminosity with a consequent extremely intense hadron radiation field that damages the silicon and degrades the performance of these devices. In this thesis work a detailed study of the signal generation in microstrip detectors has been produced with a special care for the ATLAS semiconductor tracker geometry. This has required a development of an appropriate setup to perform measurements with Transient Current/ Charge Technique. This has allowed studying the evolution of the signal in several microstrips detector samples irradiated at fluences covering the range expected in the ATLAS Semiconductor Tracker. For a better understanding of these measurements a powerful software package that simulates the signal generation in these devices has been developed. Moreover in this thesis it has been also shown that the degradation due to radiation in silicon detectors can be strongly reduced if the data taking is done with detectors operated at 130 K. This makes low temperature operation that benefits of the recovery of the charge collection efficiency in highly irradiated silicon detectors (also known as Lazarus effect) an optimal option for future high luminosity experiments. (author)

  3. In-line high-rate evaporation of aluminum for the metallization of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mader, Christoph Paul

    2012-07-11

    This work focuses on the in-line high-rate evaporation of aluminum for contacting rear sides of silicon solar cells. The substrate temperature during the deposition process, the wafer bow after deposition, and the electrical properties of evaporated contacts are investigated. Furthermore, this work demonstrates for the first time the formation of aluminum-doped silicon regions by the in-line high-rate evaporation of aluminum without any further temperature treatment. The temperature of silicon wafers during in-line high-rate evaporation of aluminum is investigated in this work. The temperatures are found to depend on the wafer thickness W, the aluminum layer thickness d, and on the wafer emissivity {epsilon}. Two-dimensional finite-element simulations reproduce the measured peak temperatures with an accuracy of 97%. This work also investigates the wafer bow after in-line high-rate evaporation and shows that the elastic theory overestimates the wafer bow of planar Si wafers. The lower bow is explained with plastic deformation in the Al layer. Due to the plastic deformation only the first 79 K in temperature decrease result in a bow formation. Furthermore the electrical properties of evaporated point contacts are examined in this work. Parameterizations for the measured saturation currents of contacted p-type Si wafers and of contacted boron-diffused p{sup +}-type layers are presented. The contact resistivity of the deposited Al layers to silicon for various deposition processes and silicon surface concentrations are presented and the activation energy of the contact formation is determined. The measured saturation current densities and contact resistivities of the evaporated contacts are used in one-dimensional numerical Simulations and the impact on energy conversion efficiency of replacing a screen-printed rear side by an evaporated rear side is presented. For the first time the formation of aluminum-doped p{sup +}-type (Al-p{sup +}) silicon regions by the in

  4. Wobbling excitations in odd-A nuclei with high-j aligned particles

    International Nuclear Information System (INIS)

    Hamamoto, Ikuko

    2002-01-01

    Using the particle-rotor model in which one high-j quasiparticle is coupled to the core of triaxial shape, wobbling excitations are studied. The family of wobbling phonon excitations can be characterized by: (a) very similar intrinsic structure while collective rotation shows the wobbling feature; (b) strong B(E2;I→I-1) values for Δn w =1 transitions where n w expresses the number of wobbling phonons. For the Fermi level lying below the high-j shell with the most favorable triaxiality γ≅+20 deg., the wobbling phonon excitations may be more easily identified close to the yrast line, compared with the Fermi level lying around the middle of the shell with γ≅-30 deg. The spectroscopic study of the yrast states for the triaxial shape with -60 deg. <γ<0 are illustrated by taking a representative example with γ=-30 deg., in which a quantum number related with the special symmetry is introduced to help the physics understanding

  5. Highly selective population of two excited states in nonresonant two-photon absorption

    International Nuclear Information System (INIS)

    Zhang Hui; Zhang Shi-An; Sun Zhen-Rong

    2011-01-01

    A nonresonant two-photon absorption process can be manipulated by tailoring the ultra-short laser pulse. In this paper, we theoretically demonstrate a highly selective population of two excited states in the nonresonant two-photon absorption process by rationally designing a spectral phase distribution. Our results show that one excited state is maximally populated while the other state population is widely tunable from zero to the maximum value. We believe that the theoretical results may play an important role in the selective population of a more complex nonlinear process comprising nonresonant two-photon absorption, such as resonance-mediated (2+1)-three-photon absorption and (2+1)-resonant multiphoton ionization. (atomic and molecular physics)

  6. High mass-resolution electron-ion-ion coincidence measurements on core-excited organic molecules

    CERN Document Server

    Tokushima, T; Senba, Y; Yoshida, H; Hiraya, A

    2001-01-01

    Total electron-ion-ion coincidence measurements on core excited organic molecules have been carried out with high mass resolution by using multimode (reflectron/linear) time-of-flight mass analyzer. From the ion correlation spectra of core excited CH sub 3 OH and CD sub 3 OH, the reaction pathway to form H sub 3 sup + (D sub 3 sup +) is identified as the elimination of three H (D) atoms from the methyl group, not as the inter-group (-CH sub 3 and -OH) interactions. In a PEPIPICO spectrum of acetylacetone (CH sub 3 COCH sub 2 COCH sub 3) measured by using a reflectron TOF, correlations between ions up to mass number 70 with one-mass resolution was recorded.

  7. Resonance Excitation of Longitudinal High Order Modes in Project X Linac

    Energy Technology Data Exchange (ETDEWEB)

    Khabiboulline, T.N.; Sukhanov, A.AUTHOR = Awida, M.; Gonin, I.; Lunin, A.AUTHOR = Solyak, N.; Yakovlev, V.; /Fermilab

    2012-05-01

    Results of simulation of power loss due to excitation of longitudinal high order modes (HOMs) in the accelerating superconducting RF system of CW linac of Project X are presented. Beam structures corresponding to the various modes of Project X operation are considered: CW regime for 3 GeV physics program; pulsed mode for neutrino experiments; and pulsed regime, when Project X linac operates as a driver for Neutrino Factory/Muon Collider. Power loss and associated heat load due to resonance excitation of longitudinal HOMs are shown to be small in all modes of operation. Conclusion is made that HOM couplers can be removed from the design of superconducting RF cavities of Project X linac.

  8. Dynamic modification of the fragmentation of COq+ excited states generated with high-order harmonics

    International Nuclear Information System (INIS)

    Cao, W.; De, S.; Singh, K. P.; Chen, S.; Laurent, G.; Ray, D.; Ben-Itzhak, I.; Cocke, C. L.; Schoeffler, M. S.; Belkacem, A.; Osipov, T.; Rescigno, T.; Alnaser, A. S.; Bocharova, I. A.; Zherebtsov, S.; Kling, M. F.; Litvinyuk, I. V.

    2010-01-01

    The dynamic process of fragmentation of CO q+ excited states is investigated using a pump-probe approach. EUV radiation (32-48 eV) generated by high-order harmonics was used to ionize and excite CO molecules and a time-delayed infrared (IR) pulse (800 nm) was used to influence the evolution of the dissociating multichannel wave packet. Two groups of states, separable experimentally by their kinetic-energy release (KER), are populated by the EUV and lead to C + -O + fragmentation: direct double ionization of the neutral molecule and fragmentation of the cation leading to C + -O*, followed by autoionization of O*. The IR pulse was found to modify the KER of the latter group in a delay-dependent way which is explained with a model calculation.

  9. Resonance Excitation of Longitudinal High Order Modes in Project X Linac

    International Nuclear Information System (INIS)

    Gonin, I.V.; Khabiboulline, T.N.; Lunin, A.; Solyak, N.; Sukhanov, A.I.; Yakovlev, V.P.; Awida, M.H.

    2012-01-01

    Results of simulation of power loss due to excitation of longitudinal high order modes (HOMs) in the accelerating superconducting RF system of CW linac of Project X are presented. Beam structures corresponding to the various modes of Project X operation are considered: CW regime for 3 GeV physics program; pulsed mode for neutrino experiments; and pulsed regime, when Project X linac operates as a driver for Neutrino Factory/Muon Collider. Power loss and associated heat load due to resonance excitation of longitudinal HOMs are shown to be small in all modes of operation. Conclusion is made that HOM couplers can be removed from the design of superconducting RF cavities of Project X linac.

  10. Engineering in-plane silicon nanowire springs for highly stretchable electronics

    Science.gov (United States)

    Xue, Zhaoguo; Dong, Taige; Zhu, Zhimin; Zhao, Yaolong; Sun, Ying; Yu, Linwei

    2018-01-01

    Crystalline silicon (c-Si) is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional (1D) geometry, or the line-shape, of Si nanowire (SiNW) can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquid-solid (IPSLS) mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited. Project supported by the National Basic Research 973 Program (No. 2014CB921101), the National Natural Science Foundation of China (No. 61674075), the National Key Research and Development Program of China (No. 2017YFA0205003), the Jiangsu Excellent Young Scholar Program (No. BK20160020), the Scientific and Technological Support Program in Jiangsu Province (No. BE

  11. Single-crystal silicon trench etching for fabrication of highly integrated circuits

    Science.gov (United States)

    Engelhardt, Manfred

    1991-03-01

    The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

  12. Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

    KAUST Repository

    Bahabry, Rabab R.

    2018-01-02

    Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

  13. Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

    KAUST Repository

    Bahabry, Rabab R.; Kutbee, Arwa T.; Khan, Sherjeel M.; Sepulveda, Adrian C.; Wicaksono, Irmandy; Nour, Maha A.; Wehbe, Nimer; Almislem, Amani Saleh Saad; Ghoneim, Mohamed T.; Sevilla, Galo T.; Syed, Ahad; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

    2018-01-01

    Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

  14. Changes in myopia with low-Dk hydrogel and high-Dk silicone hydrogel extended wear.

    Science.gov (United States)

    Jalbert, Isabelle; Stretton, Serina; Naduvilath, Thomas; Holden, Brien; Keay, Lisa; Sweeney, Deborah

    2004-08-01

    This study compared changes in myopia between wearers of high-oxygen permeability (Dk) silicone hydrogel lenses and low-Dk hydrogel lenses after 1 year of extended wear (EW). Ninety-two adult subjects were randomly assigned to a lens type. Subjective refraction and autokeratometry were performed at baseline and at 6 and 12 months. After 6 months of EW, myopia (spherical equivalent) regressed by 0.18 +/- 0.33 D (p Dk silicone hydrogel group and progressed by -0.23 +/- 0.36 D (p Dk hydrogel group. There were no further changes after 12 months. Previous lens wear history, baseline refractive error, and age and gender did not have an impact on the change in myopia, and only 35% of the variation could be accounted for by changes in corneal curvature and lens type. Soft contact lens type significantly affects the direction of change in myopia during EW. We hypothesize that these changes are driven by pressure-related redistribution of corneal tissue in high-Dk silicone hydrogel lens wearers and by hypoxia-associated corneal thinning in low-Dk hydrogel wearers. More long-term studies are required to confirm whether the effects of high-Dk silicone hydrogel lens wear on myopia are permanent.

  15. High-performance macroporous bulk silicon anodes synthesized by template-free chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Bang, Byoung Man; Lee, Jung-In; Kim, Hyunjung; Cho, Jaephil; Park, Soojin [Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology (UNIST), Ulsan (Korea, Republic of)

    2012-07-15

    Three-dimensional porous silicon particles can be produced via the combination of a galvanic displacement reaction and a metal-assisted chemical etching process. This simple synthetic route can be applied to make high-performance anode materials, including high specific capacity, stable cycling retention, and high rate capability, in lithium-ion batteries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states

    International Nuclear Information System (INIS)

    Patrocinio, Weslley S.; Ribeiro, Mauro; Fonseca, Leonardo R.C.

    2012-01-01

    Silicon nitride, with a permittivity mid-way between SiO 2 and common high-k materials such as HfO 2 , is widely used in microelectronics as an insulating layer on top of oxides where it serves as an impurity barrier with the positive side effect of increasing the dielectric constant of the insulator when it is SiO 2 . It is also employed as charge storage in nonvolatile memory devices thanks to its high concentration of charge traps. However, in the case of memories, it is still unclear which defects are responsible for charge trapping and what is the impact of defect concentration on the structural and electronic properties of SiN x . Indeed, for the amorphous phase the band gap was measured in the range 5.1–5.5 eV, with long tails in the density of states penetrating the gap region. It is still not clear which defects are responsible for the tails. On the other hand, the K-center defects have been associated with charge trapping, though its origin is assigned to one Si back bond. To investigate the contribution of defect states to the band edge tails and band gap states, we adopted the β phase of stoichiometric silicon nitride (β-Si 3 N 4 ) as our model material and calculated its electronic properties employing ab initio DFT/LDA simulations with self-energy correction to improve the location of defect states in the SiN x band gap through the correction of the band gap underestimation typical of DFT/LDA. We considered some important defects in SiN x , as the Si anti-site and the N vacancy with H saturation, in two defect concentrations. The location of our calculated defect levels in the band gap correlates well with the available experimental data, offering a structural explanation to the measured band edge tails and charge trapping characteristics.

  17. High-field Overhauser dynamic nuclear polarization in silicon below the metal-insulator transition.

    Science.gov (United States)

    Dementyev, Anatoly E; Cory, David G; Ramanathan, Chandrasekhar

    2011-04-21

    Single crystal silicon is an excellent system to explore dynamic nuclear polarization (DNP), as it exhibits a continuum of properties from metallic to insulating as a function of doping concentration and temperature. At low doping concentrations DNP has been observed to occur via the solid effect, while at very high-doping concentrations an Overhauser mechanism is responsible. Here we report the hyperpolarization of (29)Si in n-doped silicon crystals, with doping concentrations in the range of (1-3) × 10(17) cm(-3). In this regime exchange interactions between donors become extremely important. The sign of the enhancement in our experiments and its frequency dependence suggest that the (29)Si spins are directly polarized by donor electrons via an Overhauser mechanism within exchange-coupled donor clusters. The exchange interaction between donors only needs to be larger than the silicon hyperfine interaction (typically much smaller than the donor hyperfine coupling) to enable this Overhauser mechanism. Nuclear polarization enhancement is observed for a range of donor clusters in which the exchange energy is comparable to the donor hyperfine interaction. The DNP dynamics are characterized by a single exponential time constant that depends on the microwave power, indicating that the Overhauser mechanism is a rate-limiting step. Since only about 2% of the silicon nuclei are located within 1 Bohr radius of the donor electron, nuclear spin diffusion is important in transferring the polarization to all the spins. However, the spin-diffusion time is much shorter than the Overhauser time due to the relatively weak silicon hyperfine coupling strength. In a 2.35 T magnetic field at 1.1 K, we observed a DNP enhancement of 244 ± 84 resulting in a silicon polarization of 10.4 ± 3.4% following 2 h of microwave irradiation.

  18. Microstructure and wear behavior of austempered high carbon high silicon steel

    Directory of Open Access Journals (Sweden)

    Acharya Palaksha

    2018-01-01

    Full Text Available In the present investigation, the influence of austempering temperature and time on the microstructure and dry sliding wear behavior of high silicon steel was studied. The test specimens were initially austenitised at 900°C for 30 minutes, thereafter austempered at various temperatures 280°C, 360°C and 400°C, for varying duration from 30 to 120 minutes. These samples after austempering heat treatment were subsequently air cooled to room temperature, to generate typical ausferritic microstructures and then correlated with the wear property. The test outcomes demonstrate the slight increase in specific wear rate with increase in both austempering temperature and time. Specific wear rate was found to be minimum at an austempering temperature of 280°C, that exhibits lower bainite microstructure with high hardness, on the other hand specific wear rate was found to be slightly high at increased austempering temperatures at 360°C and 400°C, due to the upper bainite structure that offered lower hardness to the matrix. The sample austempered at 280°C for 30 minutes offered superior wear resistance when compared to other austempering conditions, mainly due to the presence of fine acicular bainitic ferrite along with stabilized retained austenite and also some martensite in the microstructure.

  19. Modernization of the Control Systems of High-Frequency, Brush-Free, and Collector Exciters of Turbogenerators

    Energy Technology Data Exchange (ETDEWEB)

    Popov, E. N., E-mail: enpo@ruselmash.ru; Komkov, A. L.; Ivanov, S. L.; Timoshchenko, K. P. [JSC “Scientific and Industrial Enterprise “Rusélprom-Élektromash” (Russian Federation)

    2016-11-15

    Methods of modernizing the regulation systems of electric machinery exciters with high-frequency, brush-free, and collector exciters by means of microprocessor technology are examined. The main problems of modernization are to increase the response speed of a system and to use a system stabilizer to increase the stability of the power system.

  20. Fluorescence spectra of Rhodamine 6G for high fluence excitation laser radiation

    CERN Document Server

    Hung, J; Olaizola, A M

    2003-01-01

    Fluorescence spectral changes of Rhodamine 6G in ethanol and glycerol solutions and deposited as a film on a silica surface have been studied using a wide range of pumping field fluence at 532 nm at room temperature. Blue shift of the fluorescence spectra and fluorescence quenching of the dye molecule in solution are observed at high excitation fluence values. Such effects are not reported for the film sample. The effects are interpreted as the result of population redistribution in the solute-solvent molecular system induced by the high fluence field and the fluence dependence of the radiationless decay mechanism.

  1. Design and Implementation of Wideband Exciter for an Ultra-high Resolution Airborne SAR System

    Directory of Open Access Journals (Sweden)

    Jia Ying-xin

    2013-03-01

    Full Text Available According to an ultra-high resolution airborne SAR system with better than 0.1 m resolution, a wideband Linear Frequency Modulated (LFM pulse compression exciter with 14.8 GHz carrier and 3.2 GHz bandwidth is designed and implemented. The selection of signal generation scheme and some key technique points for wideband LFM waveform is presented in detail. Then, an acute test and analysis of the LFM signal is performed. The final airborne experiments demonstrate the validity of the LFM source which is one of the subsystems in an ultra-high resolution airborne SAR system.

  2. Rotational bands on few-particle excitations of very high spin

    International Nuclear Information System (INIS)

    Andersson, C.G.; Krumlinde, J.; Leander, G.; Szymanski, Z.

    1980-01-01

    An RPA formalism is developed to investigate the existence and properties of slow collective rotation around a non-symmetry axis, when there already exists a large angular momentum K along the symmetry axis built up by aligned single-particle spins. It is found necessary to distinguish between the collectivity and the repeatability of the rotational excitations. First the formalism is applied to bands on hihg-K isomers in the well-deformed nucleus 176 Hf, where the rotational-model picture is reproduced for intermediate K-values in agreement with experiment. At high K there is a suppression of the collectivity corresponding to the diminishing vector-coupling coefficient of the rotational model, but the repeatability actually improves. The moment of inertia is predicted to remain substantially smaller than the rigid-body value so the bands slope up steeply from the yrast line at spins where pairing effects are gone. A second application is to the initially spherical nucleus 212 Rn, which is believed to acquire an oblate deformation that increases steadily with K due to the oblate shape of the aligned orbitals. In this case the repeatable excitations come higher above the yrast line than in 176 Hf, even at comparable deformations. Some collective states may occur very close to yrast, but these are more like dressed singleparticle excitations. The main differences between the two nuclei studied is interpreted as a general consequence of their different shell structure. (author)

  3. Concluding remarks of international symposium on highly excited states in nuclear reactions

    Energy Technology Data Exchange (ETDEWEB)

    Bernstein, A. M.; Ikegami, H.; Muraoka, M. [eds.

    1980-01-01

    This is the concluding remarks in the international symposium on highly excited states in nuclear reactions. The remarks concentrate on the giant quadrupole states. In the framework of the distorted wave Born approximation (DWB), the differential cross section can be deduced. The relevant transition matrix elements are defined, and the quantities which are measured in inelastic hadron (h, h') reactions are shown. These are used to obtain both neutron and proton transition multipole matrix elements. This is equivalent to make the isospin decomposition of the electromagnetic transition matrix elements. The ratios of the transition matrix elements of neutrons and protons of the lowest 2/sup +/ states in even-even single closed shell nuclei are evaluated and compared with experimental results. For each nucleus, the consistency between various measurements is generally good. The effect of the virtual excitation of giant 2/sup +/ states into the ground and first excited states of even-even nuclei is discussed. The accuracy of (h, h') results can be tested.

  4. The excitation of plasma convection in the high-latitude ionosphere

    International Nuclear Information System (INIS)

    Lockwood, M.; Cowley, S.W.H.; Freeman, M.P.

    1990-01-01

    Recent observations of ionospheric flows by ground-based radars, in particular by the European Incoherent Scatter (EISCAT) facility using the Polar experiment, together with previous analyses of the response of geomagnetic disturbance to variations of the interplanetary magnetic field (IMF), suggest that convection in the high-latitude ionosphere should be considered to be the sum of two intrinsically time-dependent patterns, one driven by solar wind-magnetosphere coupling at the dayside magnetopause, the other by the release of energy in the geomagnetic tail (mainly by dayside and nightside reconnection, respectively). The flows driven by dayside coupling are largest on the dayside, where they usually dominate, are associated with an expanding polar cap area, and are excited and decay on ∼ 10-min time scales following southward and northward turnings of the IMF, respectively. The latter finding indicates that the production of new open flux at the dayside magnetopause excites magnetospheric and ionospheric flow only for a short interval, ∼ 10 min, such that the flow driven by this source subsequently decays on this time scale unless maintained by the production of more open flux tubes. Correspondingly, the flows excited by the release of energy in the tail, mainly during substorms, are largest on the nightside, are associated with a contracting polar cap boundary, and are excited on ∼ 1-hour time scales following a southward turn of the IMF. In general, the total ionospheric flow will be the sum of the flows produced by these two sources, such that due to their different response times to changes in the IMF, considerable variations in the flow pattern can occur for a given direction and strength ofthe IMF. Consequently, the ionospheric electric field cannot generally be regarded as arising from a simple mapping of the solar wind electric field along open flux tubes

  5. Silicon coating treatment to improve high temperature corrosion resistance of 9%Cr steels

    International Nuclear Information System (INIS)

    Hill, M.P.

    1989-01-01

    A silicon coating process is described which confers good protection on 9%Cr steels and alloys in CO 2 based atmospheres at high temperatures and pressures. The coatings are formed by decomposition of silane at temperatures above 720 K. Protective layers are typically up to 1 μm thick. The optimum coating conditions are discussed. The chemical state of the coatings has been investigated by X-ray photoelectron spectroscopy and has demonstrated the importance of avoiding silicon oxide formation during processing. Corrosion testing has been carried out for extended periods, up to 20 000 h, at temperatures between 753 and 853 K, in a simulated advanced gas cooled reactor gas at 4 MPa pressure. Benefit factors of up to 60 times have been measured for 9%Cr steels. Even higher values have been measured for 9Cr-Fe binary alloy on which a 1 μm coating was sufficient to eliminate significant oxidation over 19 000 h except at the specimen edges. The mechanism of protection is discussed. It is suggested that a silicon surface coating for protecting steels from high temperature corrosion has some advantages over adding silicon to the bulk metal. (author)

  6. Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

    KAUST Repository

    Yang, Xinbo

    2017-05-31

    Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.

  7. High Surface Area of Porous Silicon Drives Desorption of Intact Molecules

    Science.gov (United States)

    Northen, Trent R.; Woo, Hin-Koon; Northen, Michael T.; Nordström, Anders; Uritboonthail, Winnie; Turner, Kimberly L.; Siuzdak, Gary

    2007-01-01

    The surface structure of porous silicon used in desorption/ionization on porous silicon (DIOS) mass analysis is known to play a primary role in the desorption/ionization (D/I) process. In this study, mass spectrometry and scanning electron microscopy (SEM) are used to examine the correlation between intact ion generation with surface ablation, and surface morphology. The DIOS process is found to be highly laser energy dependent and correlates directly with the appearance of surface ions (Sin+ and OSiH+). A threshold laser energy for DIOS is observed (10 mJ/cm2), which supports that DIOS is driven by surface restructuring and is not a strictly thermal process. In addition, three DIOS regimes are observed which correspond to surface restructuring and melting. These results suggest that higher surface area silicon substrates may enhance DIOS performance. A recent example which fits into this mechanism is silicon nanowires surface which have a high surface energy and concomitantly requires lower laser energy for analyte desorpton. PMID:17881245

  8. Effects of a Single Session of High Intensity Interval Treadmill Training on Corticomotor Excitability following Stroke: Implications for Therapy

    Directory of Open Access Journals (Sweden)

    Sangeetha Madhavan

    2016-01-01

    Full Text Available Objective. High intensity interval treadmill training (HIITT has been gaining popularity for gait rehabilitation after stroke. In this study, we examined the changes in excitability of the lower limb motor cortical representation (M1 in chronic stroke survivors following a single session of HIITT. We also determined whether exercise-induced changes in excitability could be modulated by transcranial direct current stimulation (tDCS enhanced with a paretic ankle skill acquisition task. Methods. Eleven individuals with chronic stroke participated in two 40-minute treadmill-training sessions: HIITT alone and HITT preceded by anodal tDCS enhanced with a skill acquisition task (e-tDCS+HIITT. Transcranial magnetic stimulation (TMS was used to assess corticomotor excitability of paretic and nonparetic tibialis anterior (TA muscles. Results. HIIT alone reduced paretic TA M1 excitability in 7 of 11 participants by ≥ 10%. e-tDCS+HIITT increased paretic TA M1 excitability and decreased nonparetic TA M1 excitability. Conclusions. HIITT suppresses corticomotor excitability in some people with chronic stroke. When HIITT is preceded by tDCS in combination with a skill acquisition task, the asymmetry of between-hemisphere corticomotor excitability is reduced. Significance. This study provides preliminary data indicating that the cardiovascular benefits of HIITT may be achieved without suppressing motor excitability in some stroke survivors.

  9. Probing highly obscured, self-absorbed galaxy nuclei with vibrationally excited HCN

    Science.gov (United States)

    Aalto, S.; Martín, S.; Costagliola, F.; González-Alfonso, E.; Muller, S.; Sakamoto, K.; Fuller, G. A.; García-Burillo, S.; van der Werf, P.; Neri, R.; Spaans, M.; Combes, F.; Viti, S.; Mühle, S.; Armus, L.; Evans, A.; Sturm, E.; Cernicharo, J.; Henkel, C.; Greve, T. R.

    2015-12-01

    We present high resolution (0.̋4) IRAM PdBI and ALMA mm and submm observations of the (ultra) luminous infrared galaxies ((U)LIRGs) IRAS 17208-0014, Arp220, IC 860 and Zw049.057 that reveal intense line emission from vibrationally excited (ν2 = 1) J = 3-2 and 4-3 HCN. The emission is emerging from buried, compact (r 5 × 1013 L⊙ kpc-2. These nuclei are likely powered by accreting supermassive black holes (SMBHs) and/or hot (>200 K) extreme starbursts. Vibrational, ν2 = 1, lines of HCN are excited by intense 14 μm mid-infrared emission and are excellent probes of the dynamics, masses, and physical conditions of (U)LIRG nuclei when H2 column densities exceed 1024 cm-2. It is clear that these lines open up a new interesting avenue to gain access to the most obscured AGNs and starbursts. Vibrationally excited HCN acts as a proxy for the absorbed mid-infrared emission from the embedded nuclei, which allows for reconstruction of the intrinsic, hotter dust SED. In contrast, we show strong evidence that the ground vibrational state (ν = 0), J = 3-2and 4-3 rotational lines of HCN and HCO+ fail to probe the highly enshrouded, compact nuclear regions owing to strong self- and continuum absorption. The HCN and HCO+ line profiles are double-peaked because of the absorption and show evidence of non-circular motions - possibly in the form of in- or outflows. Detections of vibrationally excited HCN in external galaxies are so far limited to ULIRGs and early-type spiral LIRGs, and we discuss possible causes for this. We tentatively suggest that the peak of vibrationally excited HCN emission is connected to a rapid stage of nuclear growth, before the phase of strong feedback. Based on observations carried out with the IRAM Plateau de Bure and ALMA Interferometers. IRAM is supported by INSU/CNRS (France), MPG (Germany), and IGN (Spain). ALMA is a partnership of ESO (representing its member states), NSF (USA), and NINS (Japan), together with NRC (Canada) and NSC and ASIAA

  10. Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

    Science.gov (United States)

    Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

    2018-04-01

    Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

  11. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

    2011-09-16

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  12. Contribution estimate of the 2+(1.78 MeV) level excitation in silicon nucleus to the cross section of the 28Si(π, 3π)28Si * reaction

    International Nuclear Information System (INIS)

    Ermekov, N.T.; Korotkikh, V.L.; Starkov, N.I.

    1981-01-01

    For the purpose of studying the channel contribution with low-lying level excitation in silicon nucleus into the differential cross section of the reaction the π - + 28 Si→π - +π - +π + + 28 Si reaction is investigated at the bombarding 16 GeV/c pion momentum. The calculation of differential cross sections on the basis of the Glauber model with a factorizing nucleus density is performed. The found parameters of nuclear densities are tabulated. The investigated reaction differential cross sections are calculated with account of coherent production as well as the channel with 2 + (1.78 MeV) level excitation. The calculated differential cross sections values integrated by the effective mass of the produced three-pion system (0.9 GeV + , 1.78 MeV)=0.25 mb are obtained. It is shown that filling the diffraction minimum in three-pion production differential cross section for ''alive'' silicon target is due to contribution from events with the excitation of the low-lying level 2 + (1.78 MeV) [ru

  13. Design and development of fluidized bed reactor system for production of trichlorosilane as a precursor for high purity silicon

    International Nuclear Information System (INIS)

    Kumar, Rajesh; Mohan, Sadhana; Bhanja, K.; Nayak, S.; Bhattacharya, S.K.

    2009-01-01

    Trichlorosilane is widely used as precursor material for production of high purity silicon. It is mainly produced by reaction of metallurgical grade silicon with anhydrous HCl gas in a fluidized bed reactor. To develop this process on commercial scale a pilot size fluidized bed reactor system was designed and developed and successfully operated. This paper discusses the critical issues related to these activities. (author)

  14. Very high-cycle fatigue failure in micron-scale polycrystalline silicon films : Effects of environment and surface oxide thickness

    NARCIS (Netherlands)

    Alsem, D. H.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

    2007-01-01

    Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up

  15. New Nanostructured Li 2 S/Silicon Rechargeable Battery with High Specific Energy

    KAUST Repository

    Yang, Yuan

    2010-04-14

    Rechargeable lithium ion batteries are important energy storage devices; however, the specific energy of existing lithium ion batteries is still insufficient for many applications due to the limited specific charge capacity of the electrode materials. The recent development of sulfur/mesoporous carbon nanocomposite cathodes represents a particularly exciting advance, but in full battery cells, sulfur-based cathodes have to be paired with metallic lithium anodes as the lithium source, which can result in serious safety issues. Here we report a novel lithium metal-free battery consisting of a Li 2S/mesoporous carbon composite cathode and a silicon nanowire anode. This new battery yields a theoretical specific energy of 1550 Wh kg ?1, which is four times that of the theoretical specific energy of existing lithium-ion batteries based on LiCoO2 cathodes and graphite anodes (∼410 Wh kg?1). The nanostructured design of both electrodes assists in overcoming the issues associated with using sulfur compounds and silicon in lithium-ion batteries, including poor electrical conductivity, significant structural changes, and volume expansion. We have experimentally realized an initial discharge specific energy of 630 Wh kg ?1 based on the mass of the active electrode materials. © 2010 American Chemical Society.

  16. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng; Ruffo, Riccardo; Chan, Candace K.; Peng, Hailin; Cui, Yi

    2009-01-01

    fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower

  17. Research, development and pilot production of high output thin silicon solar cells

    Science.gov (United States)

    Iles, P. A.

    1976-01-01

    Work was performed to define and apply processes which could lead to high output from thin (2-8 mils) silicon solar cells. The overall problems are outlined, and two satisfactory process sequences were developed. These sequences led to good output cells in the thickness range to just below 4 mils; although the initial contract scope was reduced, one of these sequences proved capable of operating beyond a pilot line level, to yield good quality 4-6 mil cells of high output.

  18. High-resolution patterning of graphene by screen printing with a silicon stencil for highly flexible printed electronics.

    Science.gov (United States)

    Hyun, Woo Jin; Secor, Ethan B; Hersam, Mark C; Frisbie, C Daniel; Francis, Lorraine F

    2015-01-07

    High-resolution screen printing of pristine graphene is introduced for the rapid fabrication of conductive lines on flexible substrates. Well-defined silicon stencils and viscosity-controlled inks facilitate the preparation of high-quality graphene patterns as narrow as 40 μm. This strategy provides an efficient method to produce highly flexible graphene electrodes for printed electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Very high rotational excitation of CO in a cooled electric discharge through carbon monoxide

    Science.gov (United States)

    Cossart-Magos, Claudina; Cossart, Daniel

    2000-02-01

    Infrared emission from 12CO and 13CO, excited in the cathode region of a discharge tube immersed in liquid nitrogen, was recorded by Fourier-transform spectrometry at a resolution of 0.005 cm-1. The Δv=1 sequence bands recorded in the 2500-1800 cm-1 spectral interval, indicate the existence of three different rotational populations; (i) molecules in the zero-ground level with Trot≈100 K (responsible for reabsorption of part of the 1-0 emission band); (ii) molecules with Trot≈275 K (maximum intensity for Jmax'≈6 in each band, Tvib≈3000 K for v'=2-4, Tvib≈8600 K for v'=5-13); (iii) molecules with v' limited to 6, for which R-rotational lines are observed for J' values between 50 and 120 (Jmax'≈90, non-Boltzmannian population distribution). The full-width at half-maximum (FWHM) of all the observed lines is less than 0.007 cm-1. A Doppler width of 0.005 cm-1 and translational temperature Ttr≈280 K can be deduced. Such high-J levels of the CO molecule had never been observed in the laboratory. In the absorption spectrum of the Sun photosphere, the same lines present FWHM values 5-8 times larger. The best available Dunham coefficients are checked to reproduce the high-J lines wave numbers to at least 0.001 cm-1. Dissociative recombination of the dimer (CO)2+ cation, which is likely to be formed in our experimental conditions, is discussed as a possible mechanism to produce CO fragments with very high rotational excitation, while keeping vibrational excitation limited to v'=6.

  20. Enabling electrolyte compositions for columnar silicon anodes in high energy secondary batteries

    Science.gov (United States)

    Piwko, Markus; Thieme, Sören; Weller, Christine; Althues, Holger; Kaskel, Stefan

    2017-09-01

    Columnar silicon structures are proven as high performance anodes for high energy batteries paired with low (sulfur) or high (nickel-cobalt-aluminum oxide, NCA) voltage cathodes. The introduction of a fluorinated ether/sulfolane solvent mixture drastically improves the capacity retention for both battery types due to an improved solid electrolyte interface (SEI) on the surface of the silicon electrode which reduces irreversible reactions normally causing lithium loss and rapid capacity fading. For the lithium silicide/sulfur battery cycling stability is significantly improved as compared to a frequently used reference electrolyte (DME/DOL) reaching a constant coulombic efficiency (CE) as high as 98%. For the silicon/NCA battery with higher voltage, the addition of only small amounts of fluoroethylene carbonate (FEC) to the novel electrolyte leads to a stable capacity over at least 50 cycles and a CE as high as 99.9%. A high volumetric energy density close to 1000 Wh l-1 was achieved with the new electrolyte taking all inactive components of the stack into account for the estimation.

  1. The ocular response to extended wear of a high Dk silicone hydrogel contact lens.

    Science.gov (United States)

    Fonn, Desmond; MacDonald, Karen E; Richter, Doris; Pritchard, Nicola

    2002-05-01

    A four-month extended wear clinical trial was conducted to compare the ocular effects of a high Dk Balafilcon A silicone hydrogel lens and a low Dk HEMA 38.6 per cent H20 soft lens. Twenty-four subjects who were adapted to daily wear of soft lenses wore a high Dk lens in one eye and a low Dk HEMA lens in the other eye for four months on an extended wear basis after one week of daily wear. Thirteen progress evaluations were conducted using standard clinical procedures. Eighteen subjects (75 per cent) completed the study. The high Dk lens induced significantly less bulbar and limbal injection and corneal vascularisation than the low Dk HEMA lens (p Dk lens. A significant increase in myopia was found in the eyes wearing the low Dk HEMA lens (mean = 0.50 D, p Dk lens. Three subjects developed small infiltrates in the high Dk lens wearing eyes and significantly more post-lens debris was observed under the high Dk lens. Six subjects developed papillary conjunctivitis in the eye wearing silicone hydrogel lenses but only two of those were discontinued from the study. No hypoxia-related effects were observed with extended wear of the high Dk Balafilcon A silicone hydrogel lens.

  2. Characterisation and stabilisation of the surface region of a highly polished silicon crystal sphere

    International Nuclear Information System (INIS)

    Kenny, M.J.; Wielunski, L.S.

    1999-01-01

    Full text: Typically a single crystal silicon wafer has a native oxide layer a few nm thick which changes slowly with time. A number of parameters such as hydrocarbons, water vapour, storage environment can affect this layer. The thickness of the layer is also orientation dependent. In the case of a silicon sphere the situation becomes more complex, because all orientations are present and the process of polishing involves a higher pressure and also high local temperatures. A highly polished single crystal sphere 93.6 mm in diameter is being used to determine the Avogadro constant with an uncertainty of ≤ 1 x 10 -8 . This will then be used to obtain an atomic definition of the kilogram. The composition and structure of the surface oxide layer play an important role in this measurement. Firstly the density of the oxide layer is different from that of silicon. Secondly since the diameter is measured by optical interferometry, corrections must be applied for the phase change in the reflected light beam due to the surface layer. Thirdly the orientation dependence of the layer complicated the corrections to be applied. Fourthly if measurements are made over a period of time, any changes in the surface layer must be taken into account. Given the accuracy required in the determination, the surface layer is a determining factor in the final result. A number of techniques such as spectroscopic ellipsometry and ion beam analysis are being used to study the composition and structure of the surface of a silicon sphere. Cleaning techniques such as HF and low temperature ultraviolet (ozone) are being developed to produce a clean surface. The next step involves deposition of a stable and uniform surface oxide layer a few nm thick. Techniques being investigated for this include ultra violet ozone deposition at 450 deg C and plasma deposition. The paper describes work at the NML in achieving an appropriate stable surface on the silicon sphere

  3. From Coherently Excited Highly Correlated States to Incoherent Relaxation Processes in Semiconductors

    International Nuclear Information System (INIS)

    Scha''fer, W.; Lo''venich, R.; Fromer, N. A.; Chemla, D. S.

    2001-01-01

    Recent theories of highly excited semiconductors are based on two formalisms, referring to complementary experimental conditions, the real-time nonequilibrium Green's function techniques and the coherently controlled truncation of the many-particle problem. We present a novel many-particle theory containing both of these methods as limiting cases. As a first example of its application, we investigate four-particle correlations in a strong magnetic field including dephasing resulting from the growth of incoherent one-particle distribution functions. Our results are the first rigorous solution concerning formation and decay of four-particle correlations in semiconductors. They are in excellent agreement with experimental data

  4. Many-body effects in the gain spectra of highly excited quantum-dot lasers

    International Nuclear Information System (INIS)

    Schneider, H. C.; Chow, W. W.; Koch, S. W.

    2001-01-01

    Optical gain spectra are computed for quantum dots under high excitation conditions, where there is a non-negligible two-dimensional carrier density surrounding the dots. Using a screened Hartree-Fock theory to describe the influence of the Coulomb interaction, we find different self-energy shifts for the dot and quantum-well transitions. Furthermore, in contrast to the result for quantum-well and bulk systems, the peak gain at the quantum-dot transition computed including Coulomb effects is reduced from its free carrier value

  5. Studies on the substrate mediated vibrational excitation of CO/Si(100) by means of SFG spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Han, Xu; Lass, Kristian; Balgar, Thorsten; Hasselbrink, Eckart [Universitaet Duisburg-Essen, Fachbereich Chemie, 45117 Essen (Germany)

    2009-07-01

    Vibrational excitations of adsorbates play an important role in chemical reaction dynamics. In the past decade CO on solid surfaces was chosen as adequate model system for studying vibrational relaxation dynamics. Our work is focused on the energy dissipation of vibrationally excited CO adsorbed on a silicon surface by means of IR/Vis sum frequency generation (SFG) spectroscopy. Here we present studies on substrate mediated excitation of vibrational modes of CO on Si(100) induced by UV radiation. We suppose the observation of highly excited internal stretch vibrations of CO caused by hot electrons generated within the silicon substrate.

  6. Formation of hypereutectic silicon particles in hypoeutectic Al-Si alloys under the influence of high-intensity ultrasonic vibration

    Directory of Open Access Journals (Sweden)

    Xiaogang Jian

    2013-03-01

    Full Text Available The modification of eutectic silicon is of general interest since fine eutectic silicon along with fine primary aluminum grains improves mechanical properties and ductilities. In this study, high intensity ultrasonic vibration was used to modify the complex microstructure of aluminum hypoeutectic alloys. The ultrasonic vibrator was placed at the bottom of a copper mold with molten aluminum. Hypoeutectic Al-Si alloy specimens with a unique in-depth profile of microstructure distribution were obtained. Polyhedral silicon particles, which should form in a hypereutectic alloy, were obtained in a hypoeutectic Al-Si alloy near the ultrasonic radiator where the silicon concentration was higher than the eutectic composition. The formation of hypereutectic silicon near the radiator surface indicates that high-intensity ultrasonic vibration can be used to influence the phase transformation process of metals and alloys. The size and morphology of both the silicon phase and the aluminum phase varies with increasing distance from the ultrasonic probe/radiator. Silicon morphology develops into three zones. Polyhedral primary silicon particles present in zone I, within 15 mm from the ultrasonic probe/radiator. Transition from hypereutectic silicon to eutectic silicon occurs in zone II about 15 to 20 祄 from the ultrasonic probe/radiator. The bulk of the ingot is in zone III and is hypoeutectic Al-Si alloy containing fine lamellar and fibrous eutectic silicon. The grain size is about 15 to 25 祄 in zone I, 25 to 35 祄 in zone II, and 25 to 55 祄 in zone III. The morphology of the primary ?Al phase is also changed from dendritic (in untreated samples to globular. Phase evolution during the solidification process of the alloy subjected to ultrasonic vibration is described.

  7. Design considerations for highly effective fluorescence excitation and detection optical systems for molecular diagnostics

    Science.gov (United States)

    Kasper, Axel; Van Hille, Herbert; Kuk, Sola

    2018-02-01

    Modern instruments for molecular diagnostics are continuously optimized for diagnostic accuracy, versatility and throughput. The latest progress in LED technology together with tailored optics solutions allows developing highly efficient photonics engines perfectly adapted to the sample under test. Super-bright chip-on-board LED light sources are a key component for such instruments providing maximum luminous intensities in a multitude of narrow spectral bands. In particular the combination of white LEDs with other narrow band LEDs allows achieving optimum efficiency outperforming traditional Xenon light sources in terms of energy consumption, heat dissipation in the system, and switching time between spectral channels. Maximum sensitivity of the diagnostic system can only be achieved with an optimized optics system for the illumination and imaging of the sample. The illumination beam path must be designed for optimum homogeneity across the field while precisely limiting the angular distribution of the excitation light. This is a necessity for avoiding spill-over to the detection beam path and guaranteeing the efficiency of the spectral filtering. The imaging optics must combine high spatial resolution, high light collection efficiency and optimized suppression of excitation light for good signal-to-noise ratio. In order to achieve minimum cross-talk between individual wells in the sample, the optics design must also consider the generation of stray light and the formation of ghost images. We discuss what parameters and limitations have to be considered in an integrated system design approach covering the full path from the light source to the detector.

  8. Investigating the fission process at high excitation energies through proton induced reactions on 181Ta

    International Nuclear Information System (INIS)

    Ayyad, Y.; Benlliure, J.; Casajeros, E.; Alvarez Pol, H.; Paradela, C.; Perez-Loureido, D.; Tarrio, D.; Bacquias, A.; Boudard, A.; Kezzar, K.; Leray, S.; Enqvist, T.; Foehr, V.; Kelic, A.; Pleskac, R.

    2010-01-01

    In this work we have investigated the total fission cross section of 181 Ta + 1 H at FRS (Fragment Separator - GSI) at 1, 0.8, 0.5 and 0.3 GeV with a specific setup, providing high accuracy measurements of the cross section values. the comparison of our data with previous results reveals a good agreement at high energies. However the situation remains unclear at lower energies. In general, our results covering a wide range of energy, are smoother. We have also compared the results obtained in this experiment, with several calculations performed with the intra-nuclear cascade model (INCL v4.1) coupled to de-excitation code (ABLAv3p), according to two different models describing fission process at high-excitation energies: statistical model of Bohr and Wheeler and the dynamical description of the fission process. We have showed that a simple statistical description largely over-predict the measured cross-section. Only a dynamical description of the fission, involving the role of the viscosity of the nuclear matter, provides a realistic result.

  9. Soft Functional Silicone Elastomers with High Dielectric Permittivty: Simple Additives vs. Cross-Linked Synthesized Copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

    Though dielectric elastomers (DEs) have many favorable properties, the issue of high driving voltages limits the commercial viability of the technology. Improved actuation at lower voltages can be obtained by decreasing the Young’s modulus and/or decreasing the dielectric permittivity of the elas......Though dielectric elastomers (DEs) have many favorable properties, the issue of high driving voltages limits the commercial viability of the technology. Improved actuation at lower voltages can be obtained by decreasing the Young’s modulus and/or decreasing the dielectric permittivity...... of the elastomer. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE whereas addition of high permittivity fillers such as metal oxides often increases Young’s modulus such that improved actuation is not accomplished. New soft...... silicone elastomers with high dielectric permittivity were prepared through the use of chloropropyl-functional silicones. One method was through the synthesis of modular cross-linkable chloropropyl-functional copolymers that allow for a high degree of chemical freedom such that a tuneable silicone...

  10. Highly Porous Silicon Embedded in a Ceramic Matrix: A Stable High-Capacity Electrode for Li-Ion Batteries.

    Science.gov (United States)

    Vrankovic, Dragoljub; Graczyk-Zajac, Magdalena; Kalcher, Constanze; Rohrer, Jochen; Becker, Malin; Stabler, Christina; Trykowski, Grzegorz; Albe, Karsten; Riedel, Ralf

    2017-11-28

    We demonstrate a cost-effective synthesis route that provides Si-based anode materials with capacities between 2000 and 3000 mAh·g Si -1 (400 and 600 mAh·g composite -1 ), Coulombic efficiencies above 99.5%, and almost 100% capacity retention over more than 100 cycles. The Si-based composite is prepared from highly porous silicon (obtained by reduction of silica) by encapsulation in an organic carbon and polymer-derived silicon oxycarbide (C/SiOC) matrix. Molecular dynamics simulations show that the highly porous silicon morphology delivers free volume for the accommodation of strain leading to no macroscopic changes during initial Li-Si alloying. In addition, a carbon layer provides an electrical contact, whereas the SiOC matrix significantly diminishes the interface between the electrolyte and the electrode material and thus suppresses the formation of a solid-electrolyte interphase on Si. Electrochemical tests of the micrometer-sized, glass-fiber-derived silicon demonstrate the up-scaling potential of the presented approach.

  11. High energy heavy ion beam lithography in silicon

    International Nuclear Information System (INIS)

    Rout, Bibhudutta; Dymnikov, Alexander D.; Zachry, Daniel P.; Eschenazi, Elia V.; Wang, Yongqiang Q.; Greco, Richard R.; Glass, Gary A.

    2007-01-01

    As high energy ions travel through a crystalline semiconductor materials they produce damage along the path which results in resistance to some of the wet chemical etching. A series of preliminary experiments have been performed at the Louisiana Accelerator Center (LAC) to examine the feasibility of irradiating high energy (keV-MeV) ions such as protons, xenon and gold through microscale masked structures on crystalline (n-type) Si substrates followed by wet chemical etch with KOH for attaining deep micromachining in Si. The results of these experiments are reported

  12. Low cost silicon solar array project: Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon

    Science.gov (United States)

    Breneman, W. C.

    1978-01-01

    Silicon epitaxy analysis of silane produced in the Process Development Unit operating in a completely integrated mode consuming only hydrogen and metallurgical silicon resulted in film resistivities of up to 120 ohms cm N type. Preliminary kinetic studies of dichlorosilane disproportionation in the liquid phase have shown that 11.59% SiH4 is formed at equilibrium after 12 minutes contact time at 56 C. The fluid-bed reactor was operated continuously for 48 hours with a mixture of one percent silane in helium as the fluidizing gas. A high silane pyrolysis efficiency was obtained without the generation of excessive fines. Gas flow conditions near the base of the reactor were unfavorable for maintaining a bubbling bed with good heat transfer characteristics. Consequently, a porous agglomerate formed in the lower portion of the reactor. Dense coherent plating was obtained on the silicon seed particles which had remained fluidizied throughout the experiment.

  13. Wavelet based comparison of high frequency oscillations in the geodetic and fluid excitation functions of polar motion

    Science.gov (United States)

    Kosek, W.; Popinski, W.; Niedzielski, T.

    2011-10-01

    It has been already shown that short period oscillations in polar motion, with periods less than 100 days, are very chaotic and are responsible for increase in short-term prediction errors of pole coordinates data. The wavelet technique enables to compare the geodetic and fluid excitation functions in the high frequency band in many different ways, e.g. by looking at the semblance function. The waveletbased semblance filtering enables determination the common signal in both geodetic and fluid excitation time series. In this paper the considered fluid excitation functions consist of the atmospheric, oceanic and land hydrology excitation functions from ECMWF atmospheric data produced by IERS Associated Product Centre Deutsches GeoForschungsZentrum, Potsdam. The geodetic excitation functions have been computed from the combined IERS pole coordinates data.

  14. Effect of collective response on electron capture and excitation in collisions of highly charged ions with fullerenes.

    Science.gov (United States)

    Kadhane, U; Misra, D; Singh, Y P; Tribedi, Lokesh C

    2003-03-07

    Projectile deexcitation Lyman x-ray emission following electron capture and K excitation has been studied in collisions of bare and Li-like sulphur ions (of energy 110 MeV) with fullerenes (C(60)/C(70)) and different gaseous targets. The intensity ratios of different Lyman x-ray lines in collisions with fullerenes are found to be substantially lower than those for the gas targets, both for capture and excitation. This has been explained in terms of a model based on "solidlike" effect, namely, wakefield induced stark mixing of the excited states populated via electron capture or K excitation: a collective phenomenon of plasmon excitation in the fullerenes under the influence of heavy, highly charged ions.

  15. Evolution of spin excitations in a gapped antiferromagnet from the quantum to the high-temperature limit

    DEFF Research Database (Denmark)

    Kenzelmann, M.; Cowley, R.A.; Buyers, W.J.L.

    2002-01-01

    We have mapped from the quantum to the classical limit the spin excitation spectrum of the antiferromagnetic spin-1 Heisenberg chain system CsNiCl3 in its paramagnetic phase from T=5 to 200 K. Neutron scattering shows that the excitations are resonant and dispersive up to at least T=70 Ksimilar...... is in agreement with quantum Monte Carlo calculations for the spin-1 chain. xi is also consistent with the single mode approximation, suggesting that the excitations are short-lived single particle excitations. Below T=12 K where three-dimensional spin correlations are important, xi is shorter than predicted...... and the experiment is not consistent with the random phase approximation for coupled quantum chains. At T=200 K, the structure factor and second energy moment of the excitation spectrum are in excellent agreement with the high-temperature series expansion....

  16. Three exciting areas of experimental physical sciences : high temperature superconductors, metal clusters and super molecules of carbon

    International Nuclear Information System (INIS)

    Rao, C.N.

    1992-01-01

    The author has narrated his experience in carrying out research in three exciting areas of physical sciences. These areas are : high temperature superconductors, metal clusters and super molecules of carbon. (M.G.B.)

  17. Highly stressed carbon film coatings on silicon potential applications

    CERN Multimedia

    Sharda, T

    2002-01-01

    The fabrication of highly stressed and strongly adhered nanocrystalline diamond films on Si substrates is presented. A microwave plasma CVD method with controlled and continuous bias current density was used to grow the films. The stress/curvature of the films can be varied and controlled by altering the BCD. Potential applications for these films include particle physics and x-ray optics.

  18. Method for producing evaporation inhibiting coating for protection of silicon--germanium and silicon--molybdenum alloys at high temperatures in vacuum

    Science.gov (United States)

    Chao, P.J.

    1974-01-01

    A method is given for protecting Si--Ge and Si-- Mo alloys for use in thermocouples. The alloys are coated with silicon to inhibit the evaporation of the alloys at high tempenatures in a vacuum. Specific means and methods are provided. (5 fig) (Official Gazette)

  19. The effect of high level multi-tone excitation on the acoustic properties of perforates and liner samples

    OpenAIRE

    Bodén, Hans

    2012-01-01

    This paper discusses the effect of high level multi-tone acoustic excitation on the acoustic properties of perforates and liner samples. It is based on a large experimental study of the nonlinear properties of these types of samples without mean grazing or bias flow. It is known from previous studies that high level acoustic excitation at one frequency will change the acoustic impedance of perforates at other frequencies, thereby changing the boundary condition seen by the acoustic waves. Thi...

  20. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  1. Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

    Science.gov (United States)

    Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

    2018-03-27

    There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

  2. Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

    Science.gov (United States)

    Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

    2016-10-01

    The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

  3. Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

    International Nuclear Information System (INIS)

    Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

    2016-01-01

    We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

  4. Trajectory study of supercollision relaxation in highly vibrationally excited pyrazine and CO2.

    Science.gov (United States)

    Li, Ziman; Sansom, Rebecca; Bonella, Sara; Coker, David F; Mullin, Amy S

    2005-09-01

    Classical trajectory calculations were performed to simulate state-resolved energy transfer experiments of highly vibrationally excited pyrazine (E(vib) = 37,900 cm(-1)) and CO(2), which were conducted using a high-resolution transient infrared absorption spectrometer. The goal here is to use classical trajectories to simulate the supercollision energy transfer pathway wherein large amounts of energy are transferred in single collisions in order to compare with experimental results. In the trajectory calculations, Newton's laws of motion are used for the molecular motion, isolated molecules are treated as collections of harmonic oscillators, and intermolecular potentials are formed by pairwise Lennard-Jones potentials. The calculations qualitatively reproduce the observed energy partitioning in the scattered CO(2) molecules and show that the relative partitioning between bath rotation and translation is dependent on the moment of inertia of the bath molecule. The simulations show that the low-frequency modes of the vibrationally excited pyrazine contribute most to the strong collisions. The majority of collisions lead to small DeltaE values and primarily involve single encounters between the energy donor and acceptor. The large DeltaE exchanges result from both single impulsive encounters and chattering collisions that involve multiple encounters.

  5. Radiative-lifetime measurements and calculations of odd-parity highly excited levels in Ba i

    International Nuclear Information System (INIS)

    Zhang Wei; Du Shan; Palmeri, Patrick; Quinet, Pascal; Biemont, Emile; Dai Zhenwen

    2010-01-01

    Natural radiative lifetime measurements have been performed for 70 odd-parity highly excited levels of neutral barium in the energy range from 308 15.512 to 417 59.93 cm -1 by a time-resolved laser-induced fluorescence technique in a laser-produced plasma. The lifetime values measured in this paper are in the range from 11.3 to 901 ns. They are compared with the published lifetimes of four levels. Two of them are in good agreement, whereas for the other two our measurements are slightly longer than the published data. The reasons for the discrepancies are discussed. Comparisons with theoretical results of the Hartree-Fock method with relativistic corrections illustrate the difficulties associated with the use of Cowan's codes for obtaining accurate branching fractions for transitions depopulating highly excited levels along the Rydberg series of heavy neutral elements. This work will be useful to extend the set of oscillator strengths available in Ba i.

  6. Electron Impact Excitation and Dielectronic Recombination of Highly Charged Tungsten Ions

    Directory of Open Access Journals (Sweden)

    Zhongwen Wu

    2015-11-01

    Full Text Available Electron impact excitation (EIE and dielectronic recombination (DR of tungsten ions are basic atomic processes in nuclear fusion plasmas of the International Thermonuclear Experimental Reactor (ITER tokamak. Detailed investigation of such processes is essential for modeling and diagnosing future fusion experiments performed on the ITER. In the present work, we studied total and partial electron-impact excitation (EIE and DR cross-sections of highly charged tungsten ions by using the multiconfiguration Dirac–Fock method. The degrees of linear polarization of the subsequent X-ray emissions from unequally-populated magnetic sub-levels of these ions were estimated. It is found that the degrees of linear polarization of the same transition lines, but populated respectively by the EIE and DR processes, are very different, which makes diagnosis of the formation mechanism of X-ray emissions possible. In addition, with the help of the flexible atomic code on the basis of the relativistic configuration interaction method, DR rate coefficients of highly charged W37+ to W46+ ions are also studied, because of the importance in the ionization equilibrium of tungsten plasmas under running conditions of the ITER.

  7. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-12-14

    Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

  8. Highly sensitive and selective detection of dopamine using one-pot synthesized highly photoluminescent silicon nanoparticles.

    Science.gov (United States)

    Zhang, Xiaodong; Chen, Xiaokai; Kai, Siqi; Wang, Hong-Yin; Yang, Jingjing; Wu, Fu-Gen; Chen, Zhan

    2015-03-17

    A simple and highly efficient method for dopamine (DA) detection using water-soluble silicon nanoparticles (SiNPs) was reported. The SiNPs with a high quantum yield of 23.6% were synthesized by using a one-pot microwave-assisted method. The fluorescence quenching capability of a variety of molecules on the synthesized SiNPs has been tested; only DA molecules were found to be able to quench the fluorescence of these SiNPs effectively. Therefore, such a quenching effect can be used to selectively detect DA. All other molecules tested have little interference with the dopamine detection, including ascorbic acid, which commonly exists in cells and can possibly affect the dopamine detection. The ratio of the fluorescence intensity difference between the quenched and unquenched cases versus the fluorescence intensity without quenching (ΔI/I) was observed to be linearly proportional to the DA analyte concentration in the range from 0.005 to 10.0 μM, with a detection limit of 0.3 nM (S/N = 3). To the best of our knowledge, this is the lowest limit for DA detection reported so far. The mechanism of fluorescence quenching is attributed to the energy transfer from the SiNPs to the oxidized dopamine molecules through Förster resonance energy transfer. The reported method of SiNP synthesis is very simple and cheap, making the above sensitive and selective DA detection approach using SiNPs practical for many applications.

  9. High-performance silicon photonics technology for telecommunications applications.

    Science.gov (United States)

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

    2014-04-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

  10. High-performance silicon photonics technology for telecommunications applications

    International Nuclear Information System (INIS)

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Yamamoto, Tsuyoshi; Ishikawa, Yasuhiko; Wada, Kazumi

    2014-01-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. (review)

  11. High-performance silicon photonics technology for telecommunications applications

    Science.gov (United States)

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

    2014-04-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

  12. High-contrast gratings for long-wavelength laser integration on silicon

    Science.gov (United States)

    Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

    2014-02-01

    Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

  13. Silicon oxide based high capacity anode materials for lithium ion batteries

    Science.gov (United States)

    Deng, Haixia; Han, Yongbong; Masarapu, Charan; Anguchamy, Yogesh Kumar; Lopez, Herman A.; Kumar, Sujeet

    2017-03-21

    Silicon oxide based materials, including composites with various electrical conductive compositions, are formulated into desirable anodes. The anodes can be effectively combined into lithium ion batteries with high capacity cathode materials. In some formulations, supplemental lithium can be used to stabilize cycling as well as to reduce effects of first cycle irreversible capacity loss. Batteries are described with surprisingly good cycling properties with good specific capacities with respect to both cathode active weights and anode active weights.

  14. An improved PIN photodetector with integrated JFET on high-resistivity silicon

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Piemonte, Claudio; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Fazzi, Alberto; Pignatel, Giorgio U.

    2006-01-01

    We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed

  15. High-efficiency amorphous silicon solar cell on a periodic nanocone back reflector

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Ching-Mei; Cui, Yi [Department of Materials Science and Engineering, Durand Building, 496 Lomita Mall, Stanford University, Stanford, CA 94305-4034 (United States); Battaglia, Corsin; Pahud, Celine; Haug, Franz-Josef; Ballif, Christophe [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue Breguet 2, 2000 Neuchatel (Switzerland); Ruan, Zhichao; Fan, Shanhui [Department of Electrical Engineering, Stanford University (United States)

    2012-06-15

    An amorphous silicon solar cell on a periodic nanocone back reflector with a high 9.7% initial conversion efficiency is presented. The optimized back-reflector morphology provides powerful light trapping and enables excellent electrical cell performance. Up-scaling to industrial production of large-area modules should be possible using nanoimprint lithography. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A.L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Luque, J.M.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Koehler, C.; Lutz, B.; Schubert, M.B.; Werner, J.H.

    2006-01-01

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm 2 ) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3μm, a spatial-point reconstruction precision better than 10μm, deflection angles smaller than 10μrad and a transmission power in the visible and NIR higher than 70%

  17. Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

    Science.gov (United States)

    Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-12-03

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  18. MICROSTRUCTURING OF SILICON SINGLE CRYSTALS BY FIBER LASER IN HIGH-SPEED SCANNING MODE

    Directory of Open Access Journals (Sweden)

    T. A. Trifonova

    2015-11-01

    Full Text Available Subject of Study. The surface structure of the silicon wafers (substrate with a thermally grown silicon dioxide on the surface (of SiO2/Si is studied after irradiation by pulse fiber laser of ILI-1-20 type. The main requirements for exposure modes of the system are: the preservation of the integrity of the film of silicon dioxide in the process of microstructuring and the absence of interference of surrounding irradiated areas of the substrate. Method. Studies were carried out on silicon wafers KEF-4,5 oriented in the crystallographic plane (111 with the source (natural silicon dioxide (SiO2 with thickness of about 4 nm, and SiO2 with 40 nm and 150 nm thickness, grown by thermal oxidation in moist oxygen. Also, wafers KHB-10 oriented in the plane (100 with 500 nm thickness of thermal oxide were investigated. Irradiation of SiO2/Si system was produced by laser complex based on ytterbium fiber pulse laser ILI-1-20. Nominal output power of the laser was 20 W, and the laser wavelength was λ = 1062 nm. Irradiation was carried out by a focused beam spot with a diameter of 25 microns and a pulse repetition rate of 99 kHz. The samples with 150 nm and 40 nm thickness of SiO2 were irradiated at a power density equal to 1,2·102 W/cm2, and the samples of SiO2 with 500 nm thickness were irradiated at a power density equal to 2,0·102 W/cm2. Scanning was performed using a two-axis Coordinate Scanning Device based on VM2500+ drives with control via a PC with the software package "SinMarkTM." Only one scan line was used at the maximum speed of the beam equal to 8750 mm/s. Morphology control of the irradiated samples was conducted by an optical microscope ZeissA1M with high-resolution CCD array. A scanning probe microscope Nanoedicator of the NT-MDT company was used for structural measurements. Main Results. It has been shown that at a single exposure of high-frequency pulsed laser radiation on SiO2/Si system, with maintaining the integrity of the SiO2 film

  19. A novel high pressure, high temperature vessel used to conduct long-term stability measurements of silicon MEMS pressure transducers

    Science.gov (United States)

    Wisniewiski, David

    2014-03-01

    The need to quantify and to improve long-term stability of pressure transducers is a persistent requirement from the aerospace sector. Specifically, the incorporation of real-time pressure monitoring in aircraft landing gear, as exemplified in Tire Pressure Monitoring Systems (TPMS), has placed greater demand on the pressure transducer for improved performance and increased reliability which is manifested in low lifecycle cost and minimal maintenance downtime through fuel savings and increased life of the tire. Piezoresistive (PR) silicon MEMS pressure transducers are the primary choice as a transduction method for this measurement owing to their ability to be designed for the harsh environment seen in aircraft landing gear. However, these pressure transducers are only as valuable as the long-term stability they possess to ensure reliable, real-time monitoring over tens of years. The "heart" of the pressure transducer is the silicon MEMS element, and it is at this basic level where the long-term stability is established and needs to be quantified. A novel High Pressure, High Temperature (HPHT) vessel has been designed and constructed to facilitate this critical measurement of the silicon MEMS element directly through a process of mechanically "floating" the silicon MEMS element while being subjected to the extreme environments of pressure and temperature, simultaneously. Furthermore, the HPHT vessel is scalable to permit up to fifty specimens to be tested at one time to provide a statistically significant data population on which to draw reasonable conclusions on long-term stability. With the knowledge gained on the silicon MEMS element, higher level assembly to the pressure transducer envelope package can also be quantified as to the build-effects contribution to long-term stability in the same HPHT vessel due to its accommodating size. Accordingly, a HPHT vessel offering multiple levels of configurability and robustness in data measurement is presented, along

  20. High temperature study of flexible silicon-on-insulator fin field-effect transistors

    KAUST Repository

    Diab, Amer El Hajj

    2014-09-29

    We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry\\'s most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

  1. High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Shekari, L., E-mail: lsg09_phy089@student.usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer A new kind of substrate (porous silicon) was used. Black-Right-Pointing-Pointer Also this research introduces an easy and safe method to grow high quality GaN NWs. Black-Right-Pointing-Pointer This is a new growth process to decrease the cost, complexity of growth of GaN NWs. Black-Right-Pointing-Pointer It is a controllable method to synthesize GaN NWs by thermal evaporation. - Abstract: Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.

  2. Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

    Science.gov (United States)

    Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

    2017-03-20

    Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

  3. Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices

    Science.gov (United States)

    Wasisto, Hutomo Suryo; Yu, Feng; Doering, Lutz; Völlmeke, Stefan; Brand, Uwe; Bakin, Andrey; Waag, Andreas; Peiner, Erwin

    2015-05-01

    Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al2O3) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al2O3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al2O3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al2O3 wet etching and in ICP cryogenic dry etching. By using SF6/O2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60-100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

  4. Trapping induced Neff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors

    International Nuclear Information System (INIS)

    Eremin, V.; Li, Z.; Iljashenko, I.

    1994-02-01

    The trapping of both non-equilibrium electrons and holes by neutron induced deep levels in high resistivity silicon planar detectors have been observed. In the experiments Transient Current and Charge Techniques, with short laser light pulse excitation have been applied at temperature ranges of 77--300 k. Light pulse illumination of the front (p + ) and back (n + ) contacts of the detectors showed effective trapping and detrapping, especially for electrons. At temperatures lower than 150 k, the detrapping becomes non-efficient, and the additional negative charge of trapped electrons in the space charge region (SCR) of the detectors leads to dramatic transformations of the electric field due to the distortion of the effective space charge concentration N eff . The current and charge pulses transformation data can be explained in terms of extraction of electric field to the central part of the detector from the regions near both contacts. The initial field distribution may be recovered immediately by dropping reverse bias, which injects both electrons and holes into the space charge region. In the paper, the degree of the N eff distortions among various detectors irradiated by different neutron fluences are compared

  5. Novel spin excitation in the high field phase of an S=1 antiferromagnetic chain

    International Nuclear Information System (INIS)

    Hagiwara, M.; Kashiwagi, T.; Kimura, S.; Honda, Z.; Kindo, K.

    2007-01-01

    We report the results of high-field multi-frequency ESR experiment on the S=1 Heisenberg antiferromagnetic chain Ni(C 5 H 14 N 2 ) 2 N 3 (PF 6 ) for the fields up to about 55T and the frequencies up to about 2THz. We have found that excitation branches above the critical field (H c ) where the energy gap closes change into one branch around 15T which becomes close to the paramagnetic line at high fields. The branch above 15T fits well the conventional antiferromagnetic resonance mode with easy planar anisotropy. We compare the results with those in a weakly coupled antiferromagnetic dimer compound KCuCl 3 and discuss the origin of the branches observed above H c

  6. Microscopic unitary description of tidal excitations in high-energy string-brane collisions

    CERN Document Server

    D'Appollonio, Giuseppe; Russo, Rodolfo; Veneziano, Gabriele

    2013-01-01

    The eikonal operator was originally introduced to describe the effect of tidal excitations on higher-genus elastic string amplitudes at high energy. In this paper we provide a precise interpretation for this operator through the explicit tree-level calculation of generic inelastic transitions between closed strings as they scatter off a stack of parallel Dp-branes. We perform this analysis both in the light-cone gauge, using the Green-Schwarz vertex, and in the covariant formalism, using the Reggeon vertex operator. We also present a detailed discussion of the high energy behaviour of the covariant string amplitudes, showing how to take into account the energy factors that enhance the contribution of the longitudinally polarized massive states in a simple way.

  7. Shell structure effects at high excitations and many-quasiparticle configurations

    International Nuclear Information System (INIS)

    Soloviev, V.G.

    1980-01-01

    Experimental and theoretical data available on few- and many-quasiparticle components of the wave functions of complex nuclei at low, intermediate and high energies are shortly analyzed. The components are treated in the nuclear quasiparticle-phonon model. Specific features of the lowest and high-spin states, giant resonances, neutron resonances and the effects of the energy-level structure in the few-and many-particle transfer reactions are discussed. It is concluded that the most reliable nuclear properties are determined by the components, their behaviour reflecting the shell structure effects. Wich increasing excitation energy the density of levels increases exponentially and the contribution of few-quasiparticle components to the normalization of the wave functions decreases exponentially

  8. High Excitation Transfer Efficiency from Energy Relay Dyes in Dye-Sensitized Solar Cells

    KAUST Repository

    Hardin, Brian E.

    2010-08-11

    The energy relay dye, 4-(Dicyanomethylene)-2-methyl-6-(4- dimethylaminostyryl)-4H-pyran (DCM), was used with a near-infrared sensitizing dye, TT1, to increase the overall power conversion efficiency of a dye-sensitized solar cell (DSC) from 3.5% to 4.5%. The unattached DCM dyes exhibit an average excitation transfer efficiency (EÌ?TE) of 96% inside TT1-covered, mesostructured TiO2 films. Further performance increases were limited by the solubility of DCM in an acetonitrile based electrolyte. This demonstration shows that energy relay dyes can be efficiently implemented in optimized dye-sensitized solar cells, but also highlights the need to design highly soluble energy relay dyes with high molar extinction coefficients. © 2010 American Chemical Society.

  9. Excited baryon form-factors at high momentum transfer at CEBAF at higher energies

    Energy Technology Data Exchange (ETDEWEB)

    Stoler, P. [Rensselaer Polytechnic Inst., Troy, NY (United States)

    1994-04-01

    The possibilities of measuring the properties of excited nucleons at high Q{sup 2} by means of exclusive single meson production at CEBAF with an electron energy of 8 GeV is considered. The motivation is to access short range phenomena in baryon structure, and to investigate the transition from the low Q{sup 2} non-perturbative QCD regime, where constituent quark models are valid, to higher Q{sup 2} where it is believed perturbative QCD plays an increasingly important role. It is found that high quality baryon decay angular distributions can be obtained for the most prominent states up to Q{sup 2} {approximately} 12 GeV{sup 2}/c{sup 2} using a set of moderate resolution, large solid angle magnetic spectrometers.

  10. Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

    Science.gov (United States)

    Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

    2016-01-15

    The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively. Copyright © 2015 Elsevier B.V. All rights reserved.

  11. V. S. Lebedev and I. L. Beigman, Physics of Highly Excited Atoms and Ions

    Science.gov (United States)

    Mewe, R.

    1999-07-01

    This book contains a comprehensive description of the basic principles of the theoretical spectroscopy and experimental spectroscopic diagnostics of Rydberg atoms and ions, i.e., atoms in highly excited states with a very large principal quantum number (n≫1). Rydberg atoms are characterized by a number of peculiar physical properties as compared to atoms in the ground or a low excited state. They have a very small ionization potential (∝1/n2), the highly excited electron has a small orbital velocity (∝1/n), the radius (∝n2) is very large, the excited electron has a long orbital period (∝n3), and the radiation lifetime is very long (∝n3-5). At the same time the R. atom is very sensitive to perturbations from external fields in collisions with charged and neutral targets. In recent years, R. atoms have been observed in laboratory and cosmic conditions for n up to ˜1000, which means that the size amounts to about 0.1 mm, ˜106 times that of an atom in the ground state. The scope of this monograph is to familiarize the reader with today's approaches and methods for describing isolated R. atoms and ions, radiative transitions between highly excited states, and photoionization and photorecombination processes. The authors present a number of efficient methods for describing the structure and properties of R. atoms and calculating processes of collisions with neutral and charged particles as well as spectral-line broadening and shift of Rydberg atomic series in gases, cool and hot plasmas in laboratories and in astrophysical sources. Particular attention is paid to a comparison of theoretical results with available experimental data. The book contains 9 chapters. Chapter 1 gives an introduction to the basic properties of R. atoms (ions), Chapter 2 is devoted to an account of general methods describing an isolated Rydberg atom. Chapter 3 is focussed on the recent achievements in calculations of form factors and dipole matrix elements of different types of

  12. Transport coefficients in high-temperature ionized air flows with electronic excitation

    Science.gov (United States)

    Istomin, V. A.; Oblapenko, G. P.

    2018-01-01

    Transport coefficients are studied in high-temperature ionized air mixtures using the modified Chapman-Enskog method. The 11-component mixture N2/N2+/N /N+/O2/O2+/O /O+/N O /N O+/e- , taking into account the rotational and vibrational degrees of freedom of molecules and electronic degrees of freedom of both atomic and molecular species, is considered. Using the PAINeT software package, developed by the authors of the paper, in wide temperature range calculations of the thermal conductivity, thermal diffusion, diffusion, and shear viscosity coefficients for an equilibrium ionized air mixture and non-equilibrium flow conditions for mixture compositions, characteristic of those in shock tube experiments and re-entry conditions, are performed. For the equilibrium air case, the computed transport coefficients are compared to those obtained using simplified kinetic theory algorithms. It is shown that neglecting electronic excitation leads to a significant underestimation of the thermal conductivity coefficient at temperatures higher than 25 000 K. For non-equilibrium test cases, it is shown that the thermal diffusion coefficients of neutral species and the self-diffusion coefficients of all species are strongly affected by the mixture composition, while the thermal conductivity coefficient is most strongly influenced by the degree of ionization of the flow. Neglecting electronic excitation causes noticeable underestimation of the thermal conductivity coefficient at temperatures higher than 20 000 K.

  13. Excitation of high energy levels under laser exposure of suspensions of nanoparticles in liquids

    Energy Technology Data Exchange (ETDEWEB)

    Shafeev, G.A. [Wave Research Center of A.M. Prokhorov General Physics Institute, 38, Vavilov Street, 119991 Moscow (Russian Federation)], E-mail: shafeev@kapella.gpi.ru; Simakin, A.V. [Wave Research Center of A.M. Prokhorov General Physics Institute, 38, Vavilov Street, 119991 Moscow (Russian Federation); Bozon-Verduraz, F. [ITODYS, UMR CNRS 7086, Universite Paris 7-Denis Diderot, 2, place Jussieu, 75251 Paris cedex 05 (France); Robert, M. [Laboratoire d' Electrochimie Moleculaire, UMR CNRS 7591, Universite Paris 7 Denis Diderot, 2, place Jussieu, 75251 Paris cedex 05 (France)

    2007-12-15

    Laser exposure of suspensions of nanoparticles in liquids leads to excitation of high energy levels in both liquid and nanoparticle material. The emission spectrum of the colloidal solution under exposure of a suspension metallic nanoparticles in water to radiation of a Nd:YAG laser of a picosecond range of pulse duration is discussed. Excitation of nuclear energy levels and neutron release is experimentally studied on the model system of transmutation of Hg into Au that occurs under exposure of Hg nanodrops suspended in D{sub 2}O. The proposed mechanism involves: (i) emission of X-ray photons by Hg nanoparticles upon laser exposure, leading to neutron release from D{sub 2}O, (ii) initiation of Hg {yields} Au transmutation by the capture of neutrons. The effect of transmutation is more pronounced using {sup 196}Hg isotope instead of Hg of natural isotope composition. The influence of laser pulse duration on the degree of transmutation (from fs through ns range) is discussed.

  14. Investigations of the valence-shell excitations of molecular ethane by high-energy electron scattering

    Science.gov (United States)

    Xu, Wei-Qing; Xu, Long-Quan; Qi, De-Guang; Chen, Tao; Liu, Ya-Wei; Zhu, Lin-Fan

    2018-04-01

    The differential cross sections and generalized oscillator strengths for the low-lying excitations of the valence-shell 1eg orbital electron in ethane have been measured for the first time at a high incident electron energy of 1500 eV and a scattering angular range of 1.5°-10°. A weak feature, termed X here, with a band center of about 7.5 eV has been observed, which was also announced by the previous experimental and theoretical studies. The dynamic behaviors of the generalized oscillator strengths for the 3s (8.7 eV), 3s+3p (9.31 eV, 9.41 eV), and X (˜7.5 eV) transitions on the momentum transfer squared have been obtained. The integral cross sections of these transitions from their thresholds to 5000 eV have been obtained with the aid of the BE-scaling (B is the binding energy and E is the excitation energy) method. The optical oscillator strengths of the above transitions determined by extrapolating their generalized oscillator strengths to the limit of the squared momentum transfer K2 → 0 are in good agreement with the ones from the photoabsorption spectrum [J. W. Au et al., Chem. Phys. 173, 209 (1993)], which indicates that the present differential cross sections, generalized oscillator strengths, and integral cross sections can serve as benchmark data.

  15. Effects of classical resonances on the chaotic microwave ionization of highly excited hydrogen atoms

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, R V

    1987-05-01

    Experimental measurements of the microwave ionization of highly excited hydrogen atoms with principal quantum numbers ranging from n = 32 to 90 are well described by a classical treatment of the nonlinear electron dynamics. In particular, the measurements of the threshold field for the onset of significant ionization exhibits a curious dependence on the microwave frequency with distinct peaks at rational values of the scaled frequency, n/sup 3/..cap omega.. = 1, 2/3, 1/2, 2/5, 1/3, 1/4, 1/5, which is in excellent agreement with the predictions for the onset of classical chaos in a one-dimensional model of the experiment. In the classical theory this frequency dependence of the threshold fields is due to the stabilizing effect of nonlinear resonances (''islands'') in the classical phase space which is greatly enhanced when the microwave perturbation is turned on slowly (adiabatically) as in the experiments. Quantum calculations for this one-dimensional model also exhibit this stabilizing effect due to the preferential excitation of localized quasi-energy states.

  16. Fluorescence fluctuation of Rhodamine 6G dye for high repetition rate laser excitation

    International Nuclear Information System (INIS)

    Singh, Nageshwar; Patel, Hemant K.; Dixit, S.K.; Vora, H.S.

    2013-01-01

    In this paper, fluorescence from Rhodamine 6G dye for stationary and flowing liquid medium, excited by copper vapor laser, operating at 6 kHz pulse repetition frequency, was investigated. Large fluctuations in spectral width (about 5 nm) and spectral intensity in the fluorescence from stationary dye solution were observed, while fluctuations in the spectral width diminish in a flowing dye medium. However, this increases spectral intensity and slightly red shifts the fluorescence peak emission wavelength. Theoretical analysis was carried out to explain the observed results by incorporating the temperature induced refractive index, beam deflection and spectral variation in stationary dye solution. Numerical analysis of thermal load and contour of temperature in the optical pumped region inside the dye cell in stationary, 0.2 and 1.5 m/s flow velocity was also investigated to support our analysis. - Highlights: ► High repetition rate excitation generates inhomogeneity in the gain medium. ► Fluorescence of Rhodamine 6G in stationary and flowing medium was carried out. ► Fluorescence fluctuations lessen in flowing medium in contrast to stationary medium. ► Our theoretical and numerical analysis enlightens the experimented outcome trend.

  17. Microcyst response to high Dk/t silicone hydrogel contact lenses.

    Science.gov (United States)

    Keay, L; Sweeney, D F; Jalbert, I; Skotnitsky, C; Holden, B A

    2000-11-01

    To investigate the microcyst response to extended wear (EW) with high oxygen transmissible (Dk/t) silicone hydrogel lenses. Microcysts were monitored for 12 months in subjects wearing low Dk/t hydrogel lenses on a 6-night EW schedule or high Dk/t hydrogel lenses on a 30-night EW schedule. Subjects wearing low Dk/t lenses transferred to the high Dk/t EW lenses and schedule after 12 months and were monitored for a further 6 months. The mean number of microcysts did not deviate from baseline in the high Dk/t group. Microcysts in the low Dk/t group increased over 12 months, and more microcysts were observed in low Dk/t lens wearers compared with high Dk/t lens wearers after 3 months. Microcysts increased in 50% of subjects 1 week after transfer to high Dk/t lenses and returned to baseline levels seen with high Dk/t lens wear within 3 months. EW with high Dk/t silicone hydrogel lenses did not cause an increase in microcyst numbers. It is not necessary to discontinue lens wear with patients who transfer from low to high Dk/t lenses because the increase in microcysts is transitory. This result has implications for practitioners when fitting and assessing the success of high Dk/t hydrogel lenses.

  18. Effect of fabrication parameters on morphological and optical properties of highly doped p-porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zare, Maryam, E-mail: mar.zare@gmail.com [Young Researchers Club, Khomeinishahr Branch, Islamic Azad University, Khomeinishahr (Iran, Islamic Republic of); Shokrollahi, Abbas [Young Researchers Club, Khomeinishahr Branch, Islamic Azad University, Khomeinishahr (Iran, Islamic Republic of); Seraji, Faramarz E. [Optical Communication Group, Iran Telecom Research Center, Tehran (Iran, Islamic Republic of)

    2011-09-01

    Porous silicon (PS) layers were fabricated by anodization of low resistive (highly doped) p-type silicon in HF/ethanol solution, by varying current density, etching time and HF concentration. Atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) analyses were used to investigate the physical properties and reflection spectrum was used to investigate the optical behavior of PS layers in different fabrication conditions. Vertically aligned mesoporous morphology is observed in fabricated films and with HF concentration higher than 20%. The dependence of porosity, layer thickness and rms roughness of the PS layer on current density, etching time and composition of electrolyte is also observed in obtained results. Correlation between reflectivity and fabrication parameters was also explored. Thermal oxidation was performed on some mesoporous layers that resulted in changes of surface roughness, mean height and reflectivity of the layers.

  19. A radioagent method for determination of traces of phosphorus in high-purity silicon

    International Nuclear Information System (INIS)

    Chen, P.Y.; Chen, J.S.; Sun, H.J.; Yang, M.H.

    1985-01-01

    The feasibility of the determination of phosphorus at the extreme trace levels in high-purity silicon by radioreagent method is explored. After silicon dissolution with hydrofluoric and nitric acids and matrix volatilization, 12-molybdophosphoric acid is formed by the addition of the reagent, sup(99)MoOsub(4)sup(2-), in nitric acid medium and then extracted into isobutyl acetate. By plotting the phosphorus content against the radioactivity of sup(99)Mo in the organic phase, a linear relationship persisting down to 5 ng is obtained. Special effort was made to eliminate the unreacted sup(99)MoOsub(4)sup(2-) reagent and the optimal control of phosphorus blank introduced through the multistage analytical procedure in order to ensure reliable determination of phosphorus at the ppb level. (author)

  20. Significantly High Modulation Efficiency of Compact Graphene Modulator Based on Silicon Waveguide.

    Science.gov (United States)

    Shu, Haowen; Su, Zhaotang; Huang, Le; Wu, Zhennan; Wang, Xingjun; Zhang, Zhiyong; Zhou, Zhiping

    2018-01-17

    We theoretically and experimentally demonstrate a significantly large modulation efficiency of a compact graphene modulator based on a silicon waveguide using the electro refractive effect of graphene. The modulation modes of electro-absorption and electro-refractive can be switched with different applied voltages. A high extinction ratio of 25 dB is achieved in the electro-absorption modulation mode with a driving voltage range of 0 V to 1 V. For electro-refractive modulation, the driving voltage ranges from 1 V to 3 V with a 185-pm spectrum shift. The modulation efficiency of 1.29 V · mm with a 40-μm interaction length is two orders of magnitude higher than that of the first reported graphene phase modulator. The realisation of phase and intensity modulation with graphene based on a silicon waveguide heralds its potential application in optical communication and optical interconnection systems.

  1. Ultracompact high-efficiency polarising beam splitter based on silicon nanobrick arrays.

    Science.gov (United States)

    Zheng, Guoxing; Liu, Guogen; Kenney, Mitchell Guy; Li, Zile; He, Ping'an; Li, Song; Ren, Zhi; Deng, Qiling

    2016-03-21

    Since the transmission of anisotropic nano-structures is sensitive to the polarisation of an incident beam, a novel polarising beam splitter (PBS) based on silicon nanobrick arrays is proposed. With careful design of such structures, an incident beam with polarisation direction aligned with the long axis of the nanobrick is almost totally reflected (~98.5%), whilst that along the short axis is nearly totally transmitted (~94.3%). More importantly, by simply changing the width of the nanobrick we can shift the peak response wavelength from 1460 nm to 1625 nm, covering S, C and L bands of the fiber telecommunications windows. The silicon nanobrick-based PBS can find applications in many fields which require ultracompactness, high efficiency, and compatibility with semiconductor industry technologies.

  2. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

    2014-10-15

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  3. Properties of CMOS devices and circuits fabricated on high-resistivity, detector-grade silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1991-11-01

    A CMOS process that is compatible with silicon p-i-n radiation detectors has been developed and characterized. A total of twelve mask layers are used in the process. The NMOS device is formed in a retrograde well while the PMOS device is fabricated directly in the high-resistivity silicon. Isolation characteristics are similar to a standard foundary CMOS process. Circuit performance using 3 μm design rules has been evaluated. The measured propagation delay and power-delay product for a 51-stage ring oscillator was 1.5 ns and 43 fJ, respectively. Measurements on a simple cascode amplifier results in a gain-bandwidth product of 200 MHz at a bias current of 15 μA. The input-referred noise of the cascode amplifier is 20 nV/√Hz at 1 MHz

  4. High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

    International Nuclear Information System (INIS)

    Tanaka, Masaki; Higashida, Kenji

    2005-01-01

    Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals

  5. Variation of minority charge carrier lifetime in high-resistance p-type silicon under irradiation

    International Nuclear Information System (INIS)

    Basheleishvili, Z.V.; Garnyk, V.S.; Gorin, S.N.; Pagava, T.A.

    1984-01-01

    The minority carrier lifetime (tau) variation was studied in the process of p-type silicon bombardment with fast 8 MeV electrons. The irradiation and all measurements were carried out at room temperature. The tau quantity was measured by the photoconductivity attenuation method at a low injection level 20% measurement error; the resistivity was measured by the four-probe method (10% error). The resistivity and minority charge carrier lifetime tau are shown to increase with the exposure dose. It is supposed that as radiation dose increases, the rearrangement of the centres responsible for reducing the lifetime occurs and results in a tau increase in the material being irradiated, however the tau value observed in the original samples is not attained. The restoration of the minority carrier lifetime in p-type high-resistance silicon with a growing exposure dose might proceed due to reduction in the free carrier concentration

  6. PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate

    Energy Technology Data Exchange (ETDEWEB)

    Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-11-01

    The combined influence of RF-power density (RFP) and silane flow-rate ([Phi]) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane deposition efficiency, as deduced from mass spectrometry, has led to an interpretation allowing to deposit intrinsic amorphous-silicon films having an optical gap of 1.87 eV and a photoconductive ratio (ratio of ambient-temperature conductivities under 1 sun AM1 and in dark) of 6 orders of magnitude at growth rates up to 10 A/s, without any structural modification of the PECVD system used. Such results are considered of high relevance regarding industrial competitiveness. (orig.)

  7. Radiation hardness of silicon detectors - a challenge from high-energy physics

    CERN Document Server

    Lindström, G; Fretwurst, E

    1999-01-01

    An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. Problems arising from the expected hadron fluences are summarized and the use of the nonionizing energy loss for normalization of bulk damage is explained. The present knowledge on the deterioration effects caused by irradiation is described leading to an appropriate modeling. Examples are given for a correlation between the change in the macroscopic performance parameters and effects to be seen on the microscopic level by defect analysis. Finally possible ways are out-lined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering.

  8. High-silicon 238PuO2 fuel characterization study: Half module impact tests

    International Nuclear Information System (INIS)

    Reimus, M.A.H.

    1997-01-01

    The General-Purpose Heat Source (GPHS) provides power for space missions by transmitting the heat of [sup 238]Pu decay to an array of thermoelectric elements. The modular GPHS design was developed to address both survivability during launch abort and return from orbit. Previous testing conducted in support of the Galileo and Ulysses missions documented the response of GPHSs to a variety of fragment- impact, aging, atmospheric reentry, and Earth-impact conditions. The evaluations documented in this report are part of an ongoing program to determine the effect of fuel impurities on the response of the heat source to conditions baselined during the Galileo/Ulysses test program. In the first two tests in this series, encapsulated GPHS fuel pellets containing high levels of silicon were aged, loaded into GPHS module halves, and impacted against steel plates. The results show no significant differences between the response of these capsules and the behavior of relatively low-silicon fuel pellets tested previously

  9. Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation.

    Science.gov (United States)

    Chen, Charlton J; Zheng, Jiangjun; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

    2011-06-20

    We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 μm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ∼ 30 mW laser powers. Over this tuning range, the cavity Qs decreases from 3.2×10(5) to 1.2×10(5). Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

  10. Improved contact metallization for high efficiency EFG polycrystalline silicon solar cells

    International Nuclear Information System (INIS)

    Dube, C.E.; Gonsiorawski, R.C.

    1990-01-01

    Improvements in the performance of polycrystalline silicon solar cells based on a novel, laser patterned contact process are described. Small lots of cells having an average conversion efficiency of 14 + %, with several cells approaching 15%, are reported for cells of 45 cm 2 area. The high efficiency contact design is based on YAG laser patterning of the silicon nitride anti-reflection coating. The Cu metallization is done using light-induced plating, with the cell providing the driving voltage for the plating process. The Cu electrodeposits into the laser defined windows in the AR coating for reduced contact area, following which the Cu bridges on top of the Ar coating to form a continuous finger pattern. The higher cell conversion efficiency is attributed to reduced shadow loss, higher junction quality, and reduced metal-semiconductor interfacial area

  11. Some considerations on silicone oil in high-current and energy-disconnecting mechanisms

    International Nuclear Information System (INIS)

    Vogel, H.F.

    1984-03-01

    Silicone oil is considered inflammable. The dissociation products generated by an electric arc under silicone oil are known to form a highly explosive mixture with air. We calculate the arc energy required for dissociation to be 32 kJ per liter of gas mixture at standard pressure and temperature. We calculate the arc voltage gradient at a pressure of 50 atm and current density of 1 kA/mm 2 to be 0.5 kV/cm, resulting in an arc voltage of several kV, depending on the arc length. In a multikiloampere arc, the resulting arc power is likely to cause a pressure of many atmospheres in a shock wave

  12. High Temperature All Silicon-Carbide (SiC) DC Motor Drives for Venus Exploration Vehicles, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project seeks to prove the feasibility of creating high-temperature silicon-carbide (SiC) based motor drives for...

  13. A silicon-based electrochemical sensor for highly sensitive, specific, label-free and real-time DNA detection

    International Nuclear Information System (INIS)

    Guo, Yuanyuan; Su, Shao; Wei, Xinpan; Zhong, Yiling; Su, Yuanyuan; He, Yao; Huang, Qing; Fan, Chunhai

    2013-01-01

    We herein present a new kind of silicon-based electrochemical sensor using a gold nanoparticles-decorated silicon wafer (AuNPs@Si) as a high-performance electrode, which is facilely prepared via in situ AuNPs growth on a silicon wafer. Particularly significantly, the resultant electrochemical sensor is efficacious for label-free DNA detection with high sensitivity due to the unique merits of the prepared silicon-based electrode. Typically, DNA at remarkably low concentrations (1–10 fM) could be readily detected without requiring additional signal-amplification procedures, which is better than or comparable to the lowest DNA concentration ever detected via well-studied signal-amplification-assisted electrochemical sensors. Moreover, the silicon-based sensor features high specificity, allowing unambiguous discrimination of single-based mismatches. We further show that real-time DNA assembly is readily monitored via recording the intensity changes of current signals due to the robust thermal stability of the silicon-based electrode. The unprecedented advantages of the silicon-based electrochemical sensor would offer new opportunities for myriad sensing applications. (paper)

  14. High temperature dielectric function of silicon, germanium and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Leyer, Martin; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin (Germany). Institut fuer Festkoerperphysik

    2010-07-01

    In the last few years accurate values for the optical properties of silicon, germanium and GaN at high temperatures have become important as a reference for in-situ analysis, e.g. reflectometry. Precise temperature dependent dielectric measurements are necessary for the growth of GaInP/GaInAs/Ge triple-junction solar cells and the hetero epitaxy of GaN on silicon and sapphire. We performed spectroscopic ellipsometry (SE) measurements of the dielectric function of silicon, germanium and GaN between 1.5 eV and 6.5 eV in the temperature range from 300 K to 1300 K. The Samples were deoxidized chemically or by heating. High resolution SE spectra were taken every 50 K while cooling down to room temperature. The temperature dependence of the critical energies is compared to literature. Measurements for germanium showed a shift of the E{sub 2} critical point of {proportional_to}0.1 eV toward lower energies. The reason for this behavior is a non-negligible oxide layer on the samples in the literature.

  15. Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

    CERN Document Server

    Moll, Michael; Lindström, G

    2000-01-01

    We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2*10/sup 14/ to 9*10/sup 17/ cm/sup -3/ have been irradiated with fast neutrons up to a fluence of 2*10/sup 15/ cm/sup -2/. Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10601130f the initial doping concentration for [O/sub i/]=9*10/sup 17/ cm/sup -3/, while for normal detector grade material with [O/sub i/] below 5*10/sup 16/ cm /sup -3/ that value is 60-90Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentratio...

  16. Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

    Science.gov (United States)

    Beheim, Glenn M.

    2003-01-01

    The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

  17. Measurement of the drift velocities of electrons and holes in high-ohmic silicon

    International Nuclear Information System (INIS)

    Scharf, Christian

    2014-02-01

    Measurements of the drift velocities of electrons and holes as a function of the electric field and the temperature in high-ohmic silicon of crystal orientation are presented. Significant differences between our results and literature values are observed. A new parametrization of the mobility is introduced. Current transients of n-type pad diodes, generated by fast laser pulses, were investigated in order to determine the drift velocity of electrons and holes separately. Two diodes of high-ohmic silicon (1.5 kΩcm and 5.5 kΩcm) from different manufacturers were investigated as cross check. The drift velocities were determined at electric fields ranging from 5 kV/cm to 50 kV/cm at temperatures ranging from 233 K to 333 K. The mobility parameters were obtained by fitting a simulation of charge drift in silicon to the measurements. Using the convolution theorem the response function of the read-out circuit was determined with the Fourier transforms of the measurement and the simulation. The simulated transient current pulses with the new mobility parametrization are consistent with the measured ones for the temperature and electric field range investigated here. Additionally, the mobility results from the fit are consistent with the mobility determined using the simpler time-of-flight method in the field range where this method is applicable. However, our measurements show a difference of up to 14 % to the values by Canali et al. (1971). The difference to the mobility parametrization by Jacoboni et al. (1977) is up to 24 % while this parametrization is widely used for simulations of the direction due to the lack of data for silicon.

  18. Silicon solar cells with high efficiencies. Final report; Silicium-Solarzellen mit hoechsten Wirkungsgraden. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wettling, W.; Knobloch, J.; Glunz, S.W.; Henninger, V.; Kamerewerd, F.J.; Koester, B.; Leimenstoll, A.; Schaeffer, E.; Schumacher, J.; Sterk, S.; Warta, W.

    1996-06-01

    In this report the basic activities for the development of the silicon high efficiency solar cell technology are described. The project had two main goals: (i) The improvement of efficiencies using a systematic optimization of all cell parameters and technology steps and (ii) the simplification of the technology towards the possibilities of an industrial production, keeping the cell efficiency at a high level. Starting from the LBSF technology, developed at Fraunhofer ISE, the reduction of all loss mechanisms led to efficiencies up to 22.5% on FZ-silicon. Using a modification of this technology efficiencies of up to 21.7% have been reached on Cz-silicon. Even after the reduction of the number of photolithographic steps from six to three efficiencies up to 21.6% on FZ- and 19.5% on Cz-silicon have been obtained. These are best values in an international comparison. (orig.) [Deutsch] In diesem Projektbericht werden grundlegende Arbeiten zur Entwicklung der Silicium-`Highefficiency`-Solarzellentechnologie beschrieben. Das Projekt hatte zwei Hauptziele: (i) Die Erhoehung der Wirkungsgrade durch eine systematische Optimierung aller Zellparameter und aller Technologieschritte und (ii) die Vereinfachung der Technologie unter Beibehaltung sehr hoher Wirkungsgrade mit dem Ziel einer Annaeherung an die Moeglichkeiten der Industriefertigung. Ausgehend von der im Fraunhofer ISE entwickelten LBSF-Technologie gelang es durch Reduzierung aller Verlustmechanismen, Wirkungsgrade bis zu 22.5% auf FZ-Silicium zu erreichen. Nach Anpassung der Technologie wurden auf Cz-Silicium Wirkungsgrade bis 21.7% erzielt. Ein von sechs auf drei Fotomaskenschritte reduzierter Prozess erzielte immerhin noch Werte bis 21.6% auf FZ- und 19.5% auf Cz-Material. Alle dieser Werte stellen im internationalen Vergleich Spitzenleistungen dar. (orig.)

  19. Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

    Science.gov (United States)

    Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

    2015-05-01

    We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

  20. Silicon-Polymer Encapsulation of High-Level Calcine Waste for Transportation or Disposal

    International Nuclear Information System (INIS)

    Loomis, G.G.; Miller, C.M.; Giansiracusa, J.A.; Kimmel, R.; Prewett, S.V.

    2000-01-01

    This report presents the results of an experimental study investigating the potential uses for silicon-polymer encapsulation of High Level Calcine Waste currently stored within the Idaho Nuclear Technology and Engineering Center (INTEC) at the Idaho National Engineering and Environmental Laboratory (INEEL). The study investigated two different applications of silicon polymer encapsulation. One application uses silicon polymer to produce a waste form suitable for disposal at a High Level Radioactive Waste Disposal Facility directly, and the other application encapsulates the calcine material for transportation to an offsite melter for further processing. A simulated waste material from INTEC, called pilot scale calcine, which contained hazardous materials but no radioactive isotopes was used for the study, which was performed at the University of Akron under special arrangement with Orbit Technologies, the originators of the silicon polymer process called Polymer Encapsulation Technology (PET). This document first discusses the PET process, followed by a presentation of past studies involving PET applications to waste problems. Next, the results of an experimental study are presented on encapsulation of the INTEC calcine waste as it applies to transportation or disposal of calcine waste. Results relating to long-term disposal include: (1) a characterization of the pilot calcine waste; (2) Toxicity Characteristic Leaching Procedure (TCLP) testing of an optimum mixture of pilot calcine, polysiloxane and special additives; and, (3) Material Characterization Center testing MCC-1P evaluation of the optimum waste form. Results relating to transportation of the calcine material for a mixture of maximum waste loading include: compressive strength testing, 10-m drop test, melt testing, and a Department of Transportation (DOT) oxidizer test