WorldWideScience

Sample records for higher substrate temperature

  1. Preparation and characterization of pulsed laser deposited CdTe thin films at higher FTO substrate temperature and in Ar + O{sub 2} atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Chao; Ming, Zhenxun [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Li, Bing, E-mail: libing70@126.com [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Feng, Lianghuan [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Wu, Judy [Department of Physics and Astronomy, Kansas University, Lawrence 66045 (United States)

    2013-06-20

    Highlights: • CdTe films were deposited by PLD at high substrate temperatures (400 °C, 550 °C). • CdTe films were achieved under the atmosphere (1.2 Torr) of Ar mixed with O{sub 2}. • Deposited CdTe films were cubic phase and had strong (1 0 0) preferred orientation. • Scanning electron microscope (SEM) showed an average grain size of 0.3–0.6 μm. • The ultra-thin film (CdS/PLD-CdTe) solar cell with efficiency of 6.68% was made. -- Abstract: Pulsed laser deposition (PLD) is one of the promising techniques for depositing cadmium telluride (CdTe) thin films. It has been reported that PLD CdTe thin films were almost deposited at the lower substrate temperatures (<300 °C) under vacuum conditions. However, the poor crystallinity of CdTe films prepared in this way renders them not conducive to the preparation of high-efficiency CdTe solar cells. To obtain high-efficiency solar cell devices, better crystallinity and more suitable grain size are needed, which requires the CdTe layer to be deposited by PLD at high substrate temperatures (>400 °C). In this paper, CdTe layers were deposited by PLD (KrF, λ = 248 nm, 10 Hz) at different higher substrate temperatures (T{sub s}). Excellent performance of CdTe films was achieved at higher substrate temperatures (400 °C, 550 °C) under an atmosphere of Ar mixed with O{sub 2} (1.2 Torr). X-ray diffraction analysis confirmed the formation of CdTe cubic phase with a strong (1 0 0) preferential orientation at all substrates temperatures on 60 mJ laser energy. The optical properties of CdTe were investigated, and the band gaps of CdTe films were 1.51 eV and 1.49 eV at substrate temperatures of 400 °C and 550 °C, respectively. Scanning electron microscopy (SEM) showed an average grain size of 0.3–0.6 μm. Thus, under these conditions of the atmosphere of Ar + O{sub 2} (15 Torr) and at the relatively high T{sub s} (500 °C), an thin-film (FTO/PLD-CdS (100 nm)/PLD-CdTe (∼1.5 μm)/HgTe: Cu/Ag) solar cell with an

  2. Alternative substrates for higher mushrooms mycelia cultivation

    Directory of Open Access Journals (Sweden)

    TETIANA KRUPODOROVA

    2015-12-01

    Full Text Available Cultivation of 29 species of higher mushroom mycelia on alternative substrates – wastes of Ukrainian oil-fat industry, has been investigated. The amount of mushroom mycelia obtaining on 12 investigated substrates varied significantly, from 1.0 g/L to 22.9 g/L on the 14th day of cultivation. The superficial cultivation adopted in this study allows for easy to choose appropriate medium (substrate for mycelia production. Alternative substrates (compared to glucose-peptone-yeast medium were selected for all studied species, from soybean cake – most suitable for the mycelial growth of 24 species, to walnut cake − suitable only for 2 species. The utilization of substrates has been evaluated by biological efficiency. The best index of biological efficiency varied from 19.0% to 41.6% depending on the mushroom species. It was established high biological efficiency of mycelia cultivation on substrates: wheat seed cake – Pleurotus djamor, Lyophyllum shimeji, Crinipellis schevczenkovi, Phellinus igniarius, Spongipellis litschaueri; oat seed cake – Ganoderma applanatum and G. lucidum; soybean cake – Hohenbuehelia myxotricha, Trametes versicolor, Morchella esculenta, Cordyceps sinensis, C. militaris, and Agrocybe aegerita; rape seed cake – Auriporia aurea; camelina seed cake – Fomes fomentarius. The cultivation of these species are perspective as a biotechnological process of agricultural wastes converted into mycelia, which could be used in different forms of products with therapeutic action: powder or tablets nutraceuticals or ingredients for functional foods.

  3. A compact, higher order, high temperature superconductor microstrip bandpass filter on a two-inch lanthanum aluminate substrate for personal communication service applications

    International Nuclear Information System (INIS)

    Pal, Srikanta; Stevens, Chris; Edwards, David

    2005-01-01

    A practical design methodology for a compact parallel-coupled microstrip bandpass filter structure with steep attenuation is introduced using a computer-aided full wave electromagnetic simulation based on the method of moments. The structure consists of an array of fully aligned half-wavelength spiral meander line resonators. Aimed at application in the front-end receiver of digital cellular communication service, a 12-pole high temperature superconductor filter with 2.27% fractional bandwidth at 883.0 MHz was designed. The filter is fabricated using thallium-barium-calcium-copper oxide (TBCCO) thin films on a two-inch lanthanum aluminate (LaAlO 3 ) wafer. The S-parameter measurements show a good agreement with the simulated results. At 70 K, the 12-pole filter shows less than 0.4 dB insertion loss, 0.3 dB passband ripple, better than 12 dB return loss. The out of band rejection at 3 MHz below the passband edges is more than 60.0 dB. In order to estimate the power handling capability of the filter, the third-order intermodulation distortion was measured. A sensitivity analysis for the observed frequency shift in the filter is reported. Also from this analysis an approach for using the same design in 0.5% FBW applications is discussed

  4. Metallic substrates for high temperature superconductors

    Science.gov (United States)

    Truchan, Thomas G.; Miller, Dean J.; Goretta, Kenneth C.; Balachandran, Uthamalingam; Foley, Robert

    2002-01-01

    A biaxially textured face-centered cubic metal article having grain boundaries with misorientation angles greater than about 8.degree. limited to less than about 1%. A laminate article is also disclosed having a metal substrate first rolled to at least about 95% thickness reduction followed by a first annealing at a temperature less than about 375.degree. C. Then a second rolling operation of not greater than about 6% thickness reduction is provided, followed by a second annealing at a temperature greater than about 400.degree. C. A method of forming the metal and laminate articles is also disclosed.

  5. Analyzing the LiF thin films deposited at different substrate temperatures using multifractal technique

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, R.P. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); Dwivedi, S., E-mail: suneetdwivedi@gmail.com [K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Mittal, A.K. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Kumar, Manvendra [Nanotechnology Application Centre, University of Allahabad, Allahabad, UP 211002 (India); Pandey, A.C. [K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Nanotechnology Application Centre, University of Allahabad, Allahabad, UP 211002 (India)

    2014-07-01

    The Atomic Force Microscopy technique is used to characterize the surface morphology of LiF thin films deposited at substrate temperatures 77 K, 300 K and 500 K, respectively. It is found that the surface roughness of thin film increases with substrate temperature. The multifractal nature of the LiF thin film at each substrate temperature is investigated using the backward two-dimensional multifractal detrended moving average analysis. The strength of multifractility and the non-uniformity of the height probabilities of the thin films increase as the substrate temperature increases. Both the width of the multifractal spectrum and the difference of fractal dimensions of the thin films increase sharply as the temperature reaches 500 K, indicating that the multifractility of the thin films becomes more pronounced at the higher substrate temperatures with greater cluster size. - Highlights: • Analyzing LiF thin films using multifractal detrended moving average technique • Surface roughness of LiF thin film increases with substrate temperature. • LiF thin films at each substrate temperature exhibit multifractality. • Multifractility becomes more pronounced at the higher substrate temperatures.

  6. Effect of substrate temperature on electrical and magnetic properties ...

    Indian Academy of Sciences (India)

    . Figure 1. The temperature dependence of resistivity for LPMO films grown at different substrate temperatures (solid and open circles are the data in zero and 1 T magnetic field). The inset shows the variation of magnetoresistance with ...

  7. NSSEFF Designing New Higher Temperature Superconductors

    Science.gov (United States)

    2017-04-13

    AFRL-AFOSR-VA-TR-2017-0083 NSSEFF - DESIGINING NEW HIGHER TEMPERATURE SUPERCONDUCTORS Meigan Aronson THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF...2015 4. TITLE AND SUBTITLE NSSEFF - DESIGINING NEW HIGHER TEMPERATURE SUPERCONDUCTORS 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-10-1-0191 5c...materials, identifying the most promising candidates. 15. SUBJECT TERMS TEMPERATURE, SUPERCONDUCTOR 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  8. Influence of substrate temperature on properties of MgF2 coatings

    International Nuclear Information System (INIS)

    Yu Hua; Qi Hongji; Cui Yun; Shen Yanming; Shao Jianda; Fan Zhengxiu

    2007-01-01

    Thermal boat evaporation was employed to prepare MgF 2 single-layer coatings upon both JGS1 and UBK7 substrates at different substrate temperatures. Microstructure, transmittance and residual stress of these coatings were measured by X-ray diffraction, spectrophotometer, and optical interferometer, respectively. Measurement of laser induced damage threshold (LIDT) of the samples was performed at 355 nm, 8 ns pulses. The results showed that high substrate temperature was beneficial to crystallization of the film. Above 244 deg. C, the refractive index increased gradually with the substrate temperature rising. Whereas, it was exceptional at 210 deg. C that the refractive index was higher than those deposited at 244 and 277 deg. C. The tensile residual stresses were exhibited in all MgF 2 films, but not well correlated with the substrate temperature. In addition, the stresses were comparatively smaller upon JGS1 substrates. A tendency could be seen that the LIDTs reached the highest values at about 244 deg. C, and the films upon JGS1 had higher LIDTs than those upon UBK7 substrates at the same temperature. Meanwhile, the damage morphologies showed that the laser damage of the coating resulted from an absorbing center at the film-substrate interface. The features of the damages were displayed by an absorbing center dominated model. Furthermore, the reason of the difference in LIDT values was discussed in detail

  9. Temperature and substrate on Plukenetia volubilis L. seed germination

    Directory of Open Access Journals (Sweden)

    Givanildo Z. da Silva

    Full Text Available ABSTRACT The objective of this work was to evaluate the effect of temperature and substrate on the germination of P. volubilis seeds. Seeds harvested from 25 matrix plants were submitted, in two studies, to conditions of (i sowing in rolled paper towel at the temperatures of 10, 15, 20, 25, 30, 35, 40, and 45 °C, for the evaluation of germination, first count of germination, germination speed index and mean time for germination, and (ii sowing in the substrates paper towel, sand, Bioplant®, Bioplant® and micron, superfine, fine, medium and coarse vermiculite. The same evaluations mentioned in the first study were conducted at the temperature of 30 oC, as well as plant growth. The treatment replicates were distributed in a completely randomized block design and the effects of temperature were compared by polynomial regression analysis. The substrates were compared by the Scott-Knott test at 0.05 probability level. The data show that the ideal range of temperature for the germination of P. volubilis is between 25 and 30 °C. The temperature of 20 °C is the minimum for germination and those above 35 °C are lethal to these seeds. The most favorable substrate for P. volubilis seed germination is micron or fine vermiculite.

  10. Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

    Science.gov (United States)

    Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

    2015-09-01

    The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

  11. Influence of substrate temperature on certain physical properties ...

    Indian Academy of Sciences (India)

    2016-11-12

    Nov 12, 2016 ... with increasing substrate temperature was explained on the basis of the Zener pinning effect. ... the inactivation of proteins as investigated by Feng et al [9] and in that .... ing 30 ml of nutrient agar medium for bacterial growth.

  12. Nickel W14 substrates for high-temperature superconductors

    International Nuclear Information System (INIS)

    Kolb-Telieps, Angelika; Gehrmann, Bodo

    2008-01-01

    High-temperature superconductivity is on the threshold of market launch. Starting from the results of a research project, ThyssenKrupp VDM has successfully developed an industrial-scale production process for nickel W14, which is used as substrate strip in superconductors destined for applications such as generators for wind turbines. The deoxidation of the melt presented a particular challenge. On the one hand, this is required in order to avoid fractures during the hot forming, on the other, the usual deoxidation elements have negative effects on the nanoscale texture and surface roughness needed for the substrate strip. (orig.)

  13. Effect of substrate temperature on orientation of subphthalocyanine molecule in organic photovoltaic cells

    International Nuclear Information System (INIS)

    Chou, Chi-Ta; Tang, Wei-Li; Tai, Yian; Lin, Chien-Hung; Liu, Chin-Hsin J.; Chen, Li-Chyong; Chen, Kuei-Hsien

    2012-01-01

    This study investigates the effect of substrate temperature (T s ) on the boron subphthalocyanine chloride (SubPc) thin film and its power conversion efficiency in SubPc/C 60 heterojunction photovoltaic cells. The orientations of SubPc molecules in thin films determined by X-ray diffraction is strongly correlated with the electronic properties of the organic thin films, and can be controlled by the substrate temperature during the vapor deposition. An optimal substrate temperature of 120 °C has been concluded to induced (221) molecular orientation over the (122) orientation and significantly improve the carrier transport of the SubPc thin film. A SubPc/C 60 heterojunction photovoltaic cells thus fabricated shows higher open-circuit voltage and up to 1.55% conversion efficiency has been achieved, which is attributed to preferential (221) orientation of the SubPc deposited at the elevated temperature.

  14. Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

    Science.gov (United States)

    Cheemadan, Saheer; Santhosh Kumar, M. C.

    2018-04-01

    Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

  15. Temperature sensor realized by inkjet printing process on flexible substrate

    International Nuclear Information System (INIS)

    Dankoco, M.D.; Tesfay, G.Y.; Benevent, E.; Bendahan, M.

    2016-01-01

    Highlights: • Flexible temperature sensor was realized by inkjet printing process on Kapton substrate. • The jetting parameters were optimized to obtain evenly distributed silver coating layers and a large meander forming the sensor. • The Temperature sensor studied offers a good sensitivity, a good linearity and less than 5% hysteresis in extended measurement in the range of 20–60 °C. - Abstract: The objective of this study is to realize a printed and flexible temperature sensor to achieve surface temperature measurement of the human body. The sensor is a thermistor composed silver (Ag) deposited on a Polyimide substrate (Kapton HN). The meander was patterned by inkjet printing with a drop-on-demand Jetlab4 (Microfab Technologies Inc.). The resistance temperature coefficients have been studied in the temperature range of 20–60 °C with a range of voltage between 0 and 1 V. The stability versus time has also been measured without a sensor layer protection. The sensitive area of the sensor, silver lines width and the gap between the electrical conductors were, respectively 6.2 cm 2 , 300 μm, 60 μm. The mean temperature sensor sensitivity found was 2.23 × 10 −3 °C −1 . The results show a good linearity and less than 5% hysteresis in the extended measurement.

  16. Substrates and temperatures in the germination of Eriotheca gracilipes seeds

    Directory of Open Access Journals (Sweden)

    Paulo Alexandre Fernandes Rodrigues de Melo

    Full Text Available ABSTRACT The Eriotheca gracilipes (K. Schum. A. Robyns is a forest specie that belongs to the Bombacaceae family and is considered an endemic specie from the Brazilian savanna. The aim of this study was to evaluate the best substrate and temperature for the vigor and germination test of E. gracilipes seeds. The experiment was carried out in a randomized design with a 4 x 7 factorial, with 28 treatments with the combination of four temperatures (20; 25; 30 and 20-30 ºC and seven substrates (coarse vermiculite, medium vermiculite, sand, Basaplant®, paper towel, on and between filter papers, with 4 repetitions of 25 seeds each. It was assessed germination, first count of germination, and germination speed index. In conclusion, for germination and vigor tests of Eriotheca gracilipes seeds it is recommended the paper roll as substrate at temperatures of 20-30, 25 or 30 ºC, and the Basaplant® and paper roll at the temperature of 30 ºC, respectively.

  17. Temperature and angular dependence of substrate response in SEGR

    International Nuclear Information System (INIS)

    Mouret, I.; Allenspach, M.; Schrimpf, R.D.; Brews, J.R.; Galloway, K.F.

    1994-01-01

    This work examines the role of the substrate response in determining the temperature and angular dependence of Single-Event Gate Rupture (SEGR). Experimental data indicate that the likelihood of SEGR increases when the temperature of the device is increased or when the incident angle is made closer to normal. In this work, simulations are used to explore this influence of high temperature on SEGR and to support physical explanations for this effect. The reduced hole mobility at high temperature causes the hole concentration at the oxide-silicon interface to be greater, increasing the transient oxide field near the strike position. In addition, numerical calculations show that the transient oxide field decreases as the ion's angle of incidence is changed from normal. This decreased field suggests a lowered likelihood for SEGR, in agreement with the experimental trend

  18. Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

    Science.gov (United States)

    Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

    2016-10-01

    ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

  19. Temperature distribution around thin electroconductive layers created on composite textile substrates

    Directory of Open Access Journals (Sweden)

    Korzeniewska Ewa

    2018-03-01

    Full Text Available In this paper, the authors describe the distribution of temperatures around electroconductive pathways created by a physical vacuum deposition process on flexible textile substrates used in elastic electronics and textronics. Cordura material was chosen as the substrate. Silver with 99.99% purity was used as the deposited metal. This research was based on thermographic photographs of the produced samples. Analysis of the temperature field around the electroconductive layer was carried out using Image ThermaBase EU software. The analysis of the temperature distribution highlights the software’s usefulness in determining the homogeneity of the created metal layer. Higher local temperatures and non-uniform distributions at the same time can negatively influence the work of the textronic system.

  20. Influence of substrate temperature on structural, morphological and electrical properties of PbSe film deposited by radio frequency sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Wenran, E-mail: fengwenran@bipt.edu.cn [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China); Wang, Xiaoyang [College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Chen, Fei [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China); Liu, Wan [College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Zhou, Hai; Wang, Shuo; Li, Haoran [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China)

    2015-03-02

    PbSe films were prepared by radio frequency magnetron sputtering from PbSe slices target under different substrate temperatures (from room temperature to 300 °C). The effect of substrate temperature on structural properties of PbSe thin film was investigated. The surface morphology and the crystal structure of film were determined using field emission scanning electron microscopy and X-ray diffractometry, respectively. It was found that the grain shape changed with substrate temperature. When the substrate temperature was below 250 °C, most of the crystal grains were spherical in shape. For temperatures above 250 °C, the grains transformed to triangle or prismatic ones. Meanwhile, with increasing substrate temperature, the preferential orientation of the film changed from (200) to (220). To figure out the intrinsic mechanisms for this behavior, the texture coefficient, as well as the comparison between surface energy and elastic strain energy was performed. At lower temperature, the film growth was determined by surface energy, which was replaced by strain energy at higher temperature. Therefore, the diversity of crystal structure and morphology of the films at different substrate temperatures occurred. Moreover, the electrical properties of the p-type PbSe films are also quite dependent on substrate temperature. With substrate temperature increased, the electrical resistivity decreased from 1.88 to 0.14 Ω cm, while the carrier concentration increased from 1.74 × 10{sup 18} to 4.08 × 10{sup 19} cm{sup −3} as the mobility was enhanced from 0.54 to 2.21 cm{sup 2}/Vs. - Highlights: • PbSe thin films were deposited by radio frequency magnetron sputtering. • Substrate temperature determines crystal structure of PbSe films. • Transformation behaviors of PbSe films were explained by energy calculations.

  1. Dynamics of a metal overlayer on metallic substrates: High temperature effects

    International Nuclear Information System (INIS)

    Rahman, T.S.; Black, J.E.; Tian, Zeng Ju

    1992-01-01

    We have explored the structure and the dynamics of a bimetallic system consisting of a hexagonal (almost) overlayer of Ag on a square lattice (Ni(100) and Cu(100)), as a function of the surface temperature. In each case the structure is ''nearly'' incommensurate giving rise to a low frequency Goldstone mode. Also, the overlayer atoms slosh back and forth over the substrate in a corrugated fashion. The calculated dispersion of the Ag/metal vertical mode, at room temperature, is in excellent agreement with experimental data. At higher temperatures floater atoms appear on top of the overlayer displaying a variety of cluster formations and also exchanges with the substrate atoms leading to surface disordering, interdiffusion and melting

  2. Properties of nickel films growth by radio frequency magnetron sputtering at elevated substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Muslim, Noormariah, E-mail: 14h8702@ubd.edu.bn [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Soon, Ying Woan [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Physical and Geological Sciences, Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Lim, Chee Ming; Voo, Nyuk Yoong [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam)

    2016-08-01

    Pure nickel (Ni) thin films of thicknesses of 100 nm were deposited on glass substrates by radio frequency magnetron sputtering at a power of 100 W and at various substrate temperatures i.e., room temperature, 100, 200, and 300 °C. The crystalline structure, surface topography, surface morphology, electrical resistivity, and optical properties of the deposited films were studied. The properties of the Ni films could be controlled by altering the substrate temperature. Specifically, the films featured a face-centered cubic crystalline structure with predominant (111) crystallite orientation at all the substrate temperatures employed, as observed from the X-ray diffraction analysis. Films deposited at substrate temperatures greater than 200 °C additionally displayed crystalline (200) and (220) diffraction peaks. The surface morphology analysis revealed that the grain size of the Ni thin films increased with increasing substrate temperatures employed. This increase was accompanied with a decrease in the resistivity of the Ni films. The surface roughness of the films increased with increasing substrate temperatures employed, as observed from the atomic force microscopy analysis. - Highlights: • RF magnetron sputtering is a good alternative method to deposit Ni films. • Properties of Ni films could be controlled simply by tuning substrate temperatures. • Crystallite size and surface roughness increased with substrate temperatures. • Electrical resistivity reduced with increasing substrate temperatures. • Optical properties also changed with substrate temperatures.

  3. Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films

    International Nuclear Information System (INIS)

    Beena, D.; Lethy, K.J.; Vinodkumar, R.; Mahadevan Pillai, V.P.; Ganesan, V.; Phase, D.M.; Sudheer, S.K.

    2009-01-01

    Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (T s ) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at T s ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface

  4. Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Schiaber, Ziani S.; Lisboa-Filho, Paulo N.; Silva, José H. D. da [Universidade Estadual Paulista, UNESP, Bauru, São Paulo 17033-360 (Brazil); Leite, Douglas M. G. [Universidade Federal de Itajubá, UNIFEI, Itajubá, Minas Gerais 37500-903 (Brazil); Bortoleto, José R. R. [Universidade Estadual Paulista, UNESP, Sorocaba, São Paulo 18087-180 (Brazil)

    2013-11-14

    The combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 °C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a-plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c-parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 °C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 °C, 30 W and 600 °C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering.

  5. Structure of photosystem II and substrate binding at room temperature.

    Science.gov (United States)

    Young, Iris D; Ibrahim, Mohamed; Chatterjee, Ruchira; Gul, Sheraz; Fuller, Franklin; Koroidov, Sergey; Brewster, Aaron S; Tran, Rosalie; Alonso-Mori, Roberto; Kroll, Thomas; Michels-Clark, Tara; Laksmono, Hartawan; Sierra, Raymond G; Stan, Claudiu A; Hussein, Rana; Zhang, Miao; Douthit, Lacey; Kubin, Markus; de Lichtenberg, Casper; Long Vo, Pham; Nilsson, Håkan; Cheah, Mun Hon; Shevela, Dmitriy; Saracini, Claudio; Bean, Mackenzie A; Seuffert, Ina; Sokaras, Dimosthenis; Weng, Tsu-Chien; Pastor, Ernest; Weninger, Clemens; Fransson, Thomas; Lassalle, Louise; Bräuer, Philipp; Aller, Pierre; Docker, Peter T; Andi, Babak; Orville, Allen M; Glownia, James M; Nelson, Silke; Sikorski, Marcin; Zhu, Diling; Hunter, Mark S; Lane, Thomas J; Aquila, Andy; Koglin, Jason E; Robinson, Joseph; Liang, Mengning; Boutet, Sébastien; Lyubimov, Artem Y; Uervirojnangkoorn, Monarin; Moriarty, Nigel W; Liebschner, Dorothee; Afonine, Pavel V; Waterman, David G; Evans, Gwyndaf; Wernet, Philippe; Dobbek, Holger; Weis, William I; Brunger, Axel T; Zwart, Petrus H; Adams, Paul D; Zouni, Athina; Messinger, Johannes; Bergmann, Uwe; Sauter, Nicholas K; Kern, Jan; Yachandra, Vittal K; Yano, Junko

    2016-12-15

    Light-induced oxidation of water by photosystem II (PS II) in plants, algae and cyanobacteria has generated most of the dioxygen in the atmosphere. PS II, a membrane-bound multi-subunit pigment protein complex, couples the one-electron photochemistry at the reaction centre with the four-electron redox chemistry of water oxidation at the Mn 4 CaO 5 cluster in the oxygen-evolving complex (OEC). Under illumination, the OEC cycles through five intermediate S-states (S 0 to S 4 ), in which S 1 is the dark-stable state and S 3 is the last semi-stable state before O-O bond formation and O 2 evolution. A detailed understanding of the O-O bond formation mechanism remains a challenge, and will require elucidation of both the structures of the OEC in the different S-states and the binding of the two substrate waters to the catalytic site. Here we report the use of femtosecond pulses from an X-ray free electron laser (XFEL) to obtain damage-free, room temperature structures of dark-adapted (S 1 ), two-flash illuminated (2F; S 3 -enriched), and ammonia-bound two-flash illuminated (2F-NH 3 ; S 3 -enriched) PS II. Although the recent 1.95 Å resolution structure of PS II at cryogenic temperature using an XFEL provided a damage-free view of the S 1 state, measurements at room temperature are required to study the structural landscape of proteins under functional conditions, and also for in situ advancement of the S-states. To investigate the water-binding site(s), ammonia, a water analogue, has been used as a marker, as it binds to the Mn 4 CaO 5 cluster in the S 2 and S 3 states. Since the ammonia-bound OEC is active, the ammonia-binding Mn site is not a substrate water site. This approach, together with a comparison of the native dark and 2F states, is used to discriminate between proposed O-O bond formation mechanisms.

  6. High temperature superconductivity the road to higher critical temperature

    CERN Document Server

    Uchida, Shin-ichi

    2015-01-01

    This book presents an overview of material-specific factors that influence Tc and give rise to diverse Tc values for copper oxides and iron-based high- Tc superconductors on the basis of more than 25 years of experimental data, to most of which the author has made important contributions. The book then explains why both compounds are distinct from others with similar crystal structure and whether or not one can enhance Tc, which in turn gives a hint on the unresolved pairing mechanism. This is an unprecedented new approach to the problem of high-temperature superconductivity and thus will be inspiring to both specialists and non-specialists interested in this field.   Readers will receive in-depth information on the past, present, and future of high-temperature superconductors, along with special, updated information on what the real highest Tc values are and particularly on the possibility of enhancing Tc for each member material, which is important for application. At this time, the highest Tc has not been...

  7. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

    Science.gov (United States)

    Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming

    2012-07-11

    Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

  8. Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

    International Nuclear Information System (INIS)

    Banerjee, A.N.; Ghosh, C.K.; Chattopadhyay, K.K.; Minoura, Hideki; Sarkar, Ajay K.; Akiba, Atsuya; Kamiya, Atsushi; Endo, Tamio

    2006-01-01

    The structural, optical and electrical properties of ZnO thin films (260 - 490 nm thick) deposited by direct-current sputtering technique, at a relatively low-substrate temperature (363 K), onto polyethylene terephthalate and glass substrates have been investigated. X-ray diffraction patterns confirm the proper phase formation of the material. Optical transmittance data show high transparency (80% to more than 98%) of the films in the visible portion of solar radiation. Slight variation in the transparency of the films is observed with a variation in the deposition time. Electrical characterizations show the room-temperature conductivity of the films deposited onto polyethylene terephthalate substrates for 4 and 5 h around 0.05 and 0.25 S cm -1 , respectively. On the other hand, for the films deposited on glass substrates, these values are 8.5 and 9.6 S cm -1 for similar variation in the deposition time. Room-temperature conductivity of the ZnO films deposited on glass substrates is at least two orders of magnitude higher than that of ZnO films deposited onto polyethylene terephthalate substrates under identical conditions. Hall-measurements show the maximum carrier concentration of the films on PET and glass substrate around 2.8 x 10 16 and 3.1 x 10 2 cm -3 , respectively. This report will provide newer applications of ZnO thin films in flexible display technology

  9. Optical properties of thin Cu films as a function of substrate temperature

    CERN Document Server

    Savaloni, H

    2003-01-01

    Copper films (250 nm) deposited on glass substrates, at different substrate temperatures. Their optical properties were measured by ellipsometry (single wavelength of 589.3 nm) and spectrophotometry in the spectral range of 200-2600 nm. Kramers Kronig method was used for the analysis of the reflectivity curves of Cu films to obtain the optical constants of the films, while ellipsometry measurement was carried out as an independent method. The influence of substrate temperature on the microstructure of thin metallic films [Structure Zone Model ] is well established. The Effective Medium Approximation analysis was used to establish the relationship between the Structure Zone Model and Effective Medium Approximation predictions. Good agreements between Structure Zone Model as a function of substrate temperature and the values of volume fraction of voids obtained from Effective Medium Temperature analysis, are obtained; by increasing the substrate temperature the separation of the metallic grains decrease hence t...

  10. Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates

    International Nuclear Information System (INIS)

    ZhongZhenyang; Chen Peixuan; Jiang Zuimin; Bauer, Guenther

    2008-01-01

    Statistical information on GeSi islands grown on two-dimensionally pit-patterned Si substrates at different temperatures is presented. Three growth regimes on patterned substrates are identified: (i) kinetically limited growth at low growth temperatures, (ii) ordered island growth in an intermediate temperature range, and (iii) stochastic island growth within pits at high temperatures. A qualitative model based on growth kinetics is proposed to explain these phenomena. It can serve as a guidance to realize optimum growth conditions for ordered islands on patterned substrates

  11. Growth of higher fungi on wheat straw and their impact on the digestibility of the substrate

    Energy Technology Data Exchange (ETDEWEB)

    Moyson, E.; Verachtert, H. (Catholic Univ. of Leuven (Belgium). Faculty of Agriculture)

    1991-12-01

    The influence of the growth of three higher fungi on the composition of wheat straw was investigated. Pleurotus pulmonarius, P. sajor-caju and Lentinus edodes grew very well on lignocellulosic substrates, breaking down a considerable amount of lignin. The initial lignin concentration of straw was halved after 12 weeks of fungal growth, doubling the enzymic digestibility. Together with lignin, the higher fungi consumed half of the amount of hemicellulose (i.e. 15%), leaving cellulose fairly intact, which should remain as an energy source for ruminants. (orig.).

  12. Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Abdel-wahab, M.Sh [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni -Suef University, Beni-Suef (Egypt); Al-ghamdi, Attieh A. [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Dahlan, Ammar sadik [Department of architecture, faculty of environmental design, King Abdulaziz University, Jeddah (Saudi Arabia); Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Nano-Science & Semiconductor Labs, Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt)

    2016-01-15

    The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ{sup (3)} was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

  13. Comparison study of ITO thin films deposited by sputtering at room temperature onto polymer and glass substrates

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.

    2005-01-01

    Indium tin oxide (ITO) thin films have been grown simultaneously onto glass and polymer substrates at room temperature by sputtering from ceramic target. The structure, morphology and electro-optical characteristics of the ITO/glass and ITO/polymer samples have been analyzed by X-ray diffraction, atomic force microscopy, four-point electrical measurements and spectrophotometry. In the selected experimental conditions, the polycrystalline ITO coating shows higher average grain size and higher conductivity, with similar visible transmittance, onto the polymer than onto the glass substrate

  14. Hydrogenated amorphous silicon solar cells fabricated at low substrate temperature 110°C on flexible PET substrate

    Science.gov (United States)

    Ramakrishna, M.; Kumari, Juhi; Venkanna, K.; Agarwal, Pratima

    2018-05-01

    In this paper, we report a-Si:H solar cells fabricated on flexible Polyethylene terephthalate (PET) and corning glass. The a-Si:H thin films were prepared at low substrate temperature (110oC) on corning 1737 glass with different rf powers. The influence of rf power on structural and optoelectronic properties of i-a-Si:H were studied. The films deposited at rf power 50W show less broadening of peak. This indicates these films are more ordered. With this optimized parameter for i-layer, solar cells fabricated on flexible PET substrate show best efficiency of 3.3% whereas on corning glass 3.82%.

  15. Temperature sensitivity of soil respiration is dependent on readily decomposable C substrate concentration

    Science.gov (United States)

    Larionova, A. A.; Yevdokimov, I. V.; Bykhovets, S. S.

    2007-06-01

    Temperature acclimation of soil organic matter (SOM) decomposition is one of the major uncertainties in predicting soil CO2 efflux by the increase in global mean temperature. A reasonable explanation for an apparent acclimation proposed by Davidson and colleagues (2006) based on Michaelis-Menten kinetics suggests that temperature sensitivity decreases when both maximal activity of respiratory enzymes (Vmax) and half- saturation constant (Ks) cancel each other upon temperature increase. We tested the hypothesis of the canceling effect by the mathematical simulation of the data obtained in the incubation experiments with forest and arable soils. Our data confirm the hypothesis and suggest that concentration of readily decomposable C substrate as glucose equivalent is an important factor controlling temperature sensitivity. The highest temperature sensitivity was observed when C substrate concentration was much lower than Ks. Increase of substrate content to the half-saturation constant resulted in temperature acclimation associated with the canceling effect. Addition of the substrate to the level providing respiration at a maximal rate Vmax leads to the acclimation of the whole microbial community as such. However, growing microbial biomass was more sensitive to the temperature alterations. This study improves our understanding of the instability of temperature sensitivity of soil respiration under field conditions, explaining this phenomenon by changes in concentration of readily decomposable C substrate. It is worth noting that this pattern works regardless of the origin of C substrate: production by SOM decomposition, release into the soil by rhizodeposition, litter fall or drying-rewetting events.

  16. Evaluation of the barrier capability of Zr-Si films with different substrate temperature for Cu metallization

    International Nuclear Information System (INIS)

    Wang Ying; Cao Fei; Ding Minghui; Shao Lei

    2009-01-01

    Barrier capability of Zr-Si diffusion barriers in Cu metallization has been investigated. Amorphous Zr-Si diffusion barriers were deposited on the Si substrates by RF reactive magnetron sputtering under various substrate temperatures. An increase in substrate temperature results in a slightly decreased deposition rate together with an increase in mass density. An increase in substrate temperature also results in grain growth as deduced from field emission scanning electron microscopy (FE-SEM) micrographs. X-ray diffraction (XRD) spectra and Auger electron spectroscopy (AES) depth profiles for Cu/Zr-Si(RT)/Si and Cu/Zr-Si(300 deg. C)/Si samples subjected to anneal at various temperatures show that the thermal stability was strongly correlated with the deposition temperature (consequently different density and chemical composition etc.) of the Zr-Si barrier layers. ZrSi(300 deg. C) with higher mass density make the Cu/Zr-Si(300 deg. C)/Si sample more stable. The appearance of Cu 3 Si in the Cu/Zr-Si/Si sample is attributed to the failure mechanism which may be associated with the diffusion of Cu and Si via the grain boundaries of the Zr-Si barriers.

  17. Cladonia lichens on extensive green roofs: evapotranspiration, substrate temperature, and albedo.

    Science.gov (United States)

    Heim, Amy; Lundholm, Jeremy

    2013-01-01

    Green roofs are constructed ecosystems that provide ecosystem services in urban environments. Shallow substrate green roofs subject the vegetation layer to desiccation and other environmental extremes, so researchers have evaluated a variety of stress-tolerant vegetation types for green roof applications. Lichens can be found in most terrestrial habitats.  They are able to survive extremely harsh conditions, including frequent cycles of desiccation and rehydration, nutrient-poor soil, fluctuating temperatures, and high UV intensities. Extensive green roofs (substrate depth green roofs.  In a modular green roof system, we tested the effect of Cladonia lichens on substrate temperature, water loss, and albedo compared to a substrate-only control. Overall, the Cladonia modules had significantly cooler substrate temperatures during the summer and significantly warmer temperatures during the fall.  Additionally, the Cladonia modules lost significantly less water than the substrate-only control. This implies that they may be able to benefit neighboring vascular plant species by reducing water loss and maintaining favorable substrate temperatures.

  18. Copper Metallic Substrates for High Temperature Superconducting Coated Conductors

    National Research Council Canada - National Science Library

    Yust, Nicholas A; Nekkanti, Rama; Brunke, Lyle B; Srinivasan, Raghavan; Barnes, Paul N

    2006-01-01

    .... Detailed x-ray diffraction (XRD) studies and orientation imaging microscopy (OIM) were performed to measure the in-plane alignment, out-of-plane alignment, and microtexture at various deformation levels and annealing temperatures...

  19. Influence of substrate temperature on certain physical properties

    Indian Academy of Sciences (India)

    The electrical sheet resistance ( R s h ) was found to decrease sharply with increasing ... C deposition temperature, one could expect better antibacterial efficiency ... The influence of the shape and size of AIO nanograins on the antibacterial ...

  20. On the temperature effect of substrate and evaporation rate on condensate dispersion

    International Nuclear Information System (INIS)

    Orlov, Yu.F.; Belotserkovskaya, N.G.; Gustylev, V.K.

    1978-01-01

    On the basis of available and new experimental data an attempt has been made to generalize the results of studying the effect of the substrate temperature and evaporation rate on the dispersity of amorphous condensates of Sb 2 S 3 and on that of crystalline condensates of PbO and PbTe. The dispersity of the condensates is shown to decrease with a substrate temperature and evaporation rate. The specific surface decreases linearly with the 3-5-fold rise in the evaporation rate. A dispersity decrease is due to the temperature rise in the medium where condensation takes place. The pattern of dispersity dependence on the substrate temperature and evaporation rate does not depend on the mechanism of vapour condensation and is the same both for aerosol mechanism of the condensate formation and for vapour condensation directly on the substrate

  1. Initial substrate moisture content and storage temperature affects chemical properties of bagged substrates containing controlled release fertilizer at two different temperatures

    Science.gov (United States)

    Bagged potting mixes can be stored for weeks or months before being used by consumers. Some bagged potting mixes are amended with controlled release fertilizers (CRF). The objective of this research was to observe how initial substrate moisture content and storage temperature affect the chemical p...

  2. Sputter deposited titanium disilicide at high substrate temperatures

    Science.gov (United States)

    Tanielian, M.; Blackstone, S.; Lajos, R.

    1984-08-01

    Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.

  3. Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

    Science.gov (United States)

    Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

    2010-04-01

    ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

  4. Radiolysis of Aqueous Benzene Solutions at higher temperatures

    International Nuclear Information System (INIS)

    Christensen, H.

    1964-07-01

    Aqueous solutions of benzene have been irradiated with Co γ-rays with doses of up to 2.3 Mrad in the temperature region 100 - 200 C. At 100 C a linear relationship between the phenol concentration and the absorbed dose was obtained, but at 150 C and at higher temperatures the rate of the phenol formation increased significantly after an initial constant period. With higher doses the rate decreased again, falling almost to zero at 200 C after a dose of 2.2 Mrad. The G value of phenol in the initial linear period increased from 2.8 at 100 C to 8.0 at 200 C. The reaction mechanism is discussed and reactions constituting a chain reaction are suggested. The result of the addition of iron ions and of a few inorganic oxides to the system is presented and briefly discussed

  5. Radiolysis of Aqueous Benzene Solutions at higher temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Christensen, H

    1964-07-15

    Aqueous solutions of benzene have been irradiated with Co {gamma}-rays with doses of up to 2.3 Mrad in the temperature region 100 - 200 C. At 100 C a linear relationship between the phenol concentration and the absorbed dose was obtained, but at 150 C and at higher temperatures the rate of the phenol formation increased significantly after an initial constant period. With higher doses the rate decreased again, falling almost to zero at 200 C after a dose of 2.2 Mrad. The G value of phenol in the initial linear period increased from 2.8 at 100 C to 8.0 at 200 C. The reaction mechanism is discussed and reactions constituting a chain reaction are suggested. The result of the addition of iron ions and of a few inorganic oxides to the system is presented and briefly discussed.

  6. Higher-resolution selective metallization on alumina substrate by laser direct writing and electroless plating

    Science.gov (United States)

    Lv, Ming; Liu, Jianguo; Wang, Suhuan; Ai, Jun; Zeng, Xiaoyan

    2016-03-01

    How to fabricate conductive patterns on ceramic boards with higher resolution is a challenge in the past years. The fabrication of copper patterns on alumina substrate by laser direct writing and electroless copper plating is a low cost and high efficiency method. Nevertheless, the lower resolution limits its further industrial applications in many fields. In this report, the mechanisms of laser direct writing and electroless copper plating were studied. The results indicated that as the decomposed products of precursor PdCl2 have different chemical states respectively in laser-irradiated zone (LIZ) and laser-affected zone (LAZ). This phenomenon was utilized and a special chemical cleaning method with aqua regia solution was taken to selectively remove the metallic Pd in LAZ, while kept the PdO in LIZ as the only active seeds. As a result, the resolution of subsequent copper patterns was improved significantly. This technique has a great significance to develop the microelectronics devices.

  7. Room temperature deposition of magnetite thin films on organic substrate

    International Nuclear Information System (INIS)

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  8. Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Lin, Y.C.; Li, J.Y.; Yen, W.T.

    2008-01-01

    Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 x 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%

  9. INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

    OpenAIRE

    BO HE; LEI ZHAO; JING XU; HUAIZHONG XING; SHAOLIN XUE; MENG JIANG

    2013-01-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films grea...

  10. Testing the effects of temperature and humidity on printed passive UHF RFID tags on paper substrate

    Science.gov (United States)

    Linnea Merilampi, Sari; Virkki, Johanna; Ukkonen, Leena; Sydänheimo, Lauri

    2014-05-01

    This article is an interesting substrate material for environmental-friendly printable electronics. In this study, screen-printed RFID tags on paper substrate are examined. Their reliability was tested with low temperature, high temperature, slow temperature cycling, high temperature and high humidity and water dipping test. Environmental stresses affect the tag antenna impedance, losses and radiation characteristics due to their impact on the ink film and paper substrate. Low temperature, temperature cycling and high humidity did not have a radical effect on the measured parameters: threshold power, backscattered signal power or read range of the tags. However, the frequency response and the losses of the tags were slightly affected. Exposure to high temperature was found to even improve the tag performance due to the positive effect of high temperature on the ink film. The combined high humidity and high temperature had the most severe effect on the tag performance. The threshold power increased, backscattered power decreased and the read range was shortened. On the whole, the results showed that field use of these tags in high, low and changing temperature conditions and high humidity conditions is possible. Use of these tags in combined high-humidity and high-temperature conditions should be carefully considered.

  11. Effect of substrate temperature on the morphology, structural and optical properties of Zn1-xCoxO thin films

    International Nuclear Information System (INIS)

    Yang, S.Y.; Man, B.Y.; Liu, M.; Chen, C.S.; Gao, X.G.; Wang, C.C.; Hu, B.

    2011-01-01

    Zn 1-x Co x O thin films with c-axis preferred orientation were deposited on sapphire (0 0 0 1) by pulsed laser deposition (PLD) technique at different substrate temperatures in an oxygen-deficient ambient. The effect of substrate temperature on the microstructure, morphology and the optical properties of the Zn 1-x Co x O thin films was studied by means of X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible-NIR spectrophotometer, fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted as substrate temperature rose. The structure of the samples was not distorted by the Co incorporating into ZnO lattice. The surface roughness of all samples decreased as substrate temperature increased. The Co concentration in the film was higher than in the target. Emission peak near band edge emission of ZnO from the PL spectra of the all samples was quenched because the dopant complexes acted as non-radiative centers. While three emission bands located at 409 nm (3.03 eV), 496 nm (2.5 eV) and 513 nm (2.4 eV) were, respectively, observed from the PL spectra of the four samples. The three emission bands were in relation to Zn interstitials, Zn vacancies and the complex of V O and Zn i (V O Zn i ). The quantity of the Zn interstitials maintained invariable basically, while the quantity of the V O Zn i slightly decreased as substrate temperature increased.

  12. Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schaffner, J., E-mail: jschaffner@surface.tu-darmstadt.de; Feldmeier, E.; Swirschuk, A.; Schimper, H.-J.; Klein, A.; Jaegermann, W.

    2011-08-31

    The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification.

  13. RBS investigations of high-temperature reactions on graphite substrates

    Energy Technology Data Exchange (ETDEWEB)

    Eloi, C.C. [Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry]|[Center for Applied Energy Research, University of Kentucky, Lexington, KY 40506 (United States); Robertson, J.D. [Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry]|[Center for Applied Energy Research, University of Kentucky, Lexington, KY 40506 (United States); Majidi, V. [Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry

    1995-05-01

    While graphite furnace atomic absorption spectrometry (GFAAS) is one of the most powerful techniques for ultratrace analysis of Pb, it is often plagued by matrix interferences. These interferences are minimized by the addition of matrix modifiers which stabilize the analyte signal through unknown mechanisms. Using RBS, the high temperature reactions of nitrate salts of Pb were studied on pyrolytically coated graphite with and without matrix modifiers. The addition of an ammonium phosphate modifier was found to stabilize Pb through the formation of a metal oxy-phosphorus compound. Moreover, the depth profiles demonstrated that the pyrolytically coated graphite was not impervious as previously thought. Pre-treatment of the surface with O{sub 2} is also known to cause a delay in the vaporization of Pb. While a surface effect had previously been postulated, the 3.04 MeV resonance {sup 16}O({alpha}, {alpha}){sup 16}O elastic scattering measurements show that it proceeds through the formation of surface bound lead-oxygen species as the number of oxygen atoms chemisorbed and the number of lead atoms, present on the surface prior to vaporization, are nearly equal. (orig.).

  14. Strong increase in convective precipitation in response to higher temperatures

    DEFF Research Database (Denmark)

    Berg, P.; Moseley, C.; Härter, Jan Olaf Mirko

    2013-01-01

    Precipitation changes can affect society more directly than variations in most other meteorological observables, but precipitation is difficult to characterize because of fluctuations on nearly all temporal and spatial scales. In addition, the intensity of extreme precipitation rises markedly...... at higher temperature, faster than the rate of increase in the atmosphere's water-holding capacity, termed the Clausius-Clapeyron rate. Invigoration of convective precipitation (such as thunderstorms) has been favoured over a rise in stratiform precipitation (such as large-scale frontal precipitation......) as a cause for this increase , but the relative contributions of these two types of precipitation have been difficult to disentangle. Here we combine large data sets from radar measurements and rain gauges over Germany with corresponding synoptic observations and temperature records, and separate convective...

  15. Development of solid electrolytes for water electrolysis at higher temperature

    Energy Technology Data Exchange (ETDEWEB)

    Linkous, C.A. [Florida Solar Energy Center, Cocoa, FL (United States)

    1996-10-01

    This report describes efforts in developing new solid polymer electrolytes that will enable operation of proton exchange membrane electrolyzers at higher temperatures than are currently possible. Several ionomers have been prepared from polyetheretherketone (PEEK), polyethersulfone (PES), and polyphenylquinoxaline (PPQ) by employing various sulfonation procedures. By controlling the extent of sulfonation, a range of proton conductivities could be achieved, whose upper limit actually exceeded that of commercially available perfluoralkyl sulfonates. Thermoconductimetric analysis of samples at various degrees of sulfonation showed an inverse relationship between conductivity and maximum operating temperature. This was attributed to the dual effect of adding sulfonate groups to the polymer: more acid groups produce more protons for increased conductivity, but they also increase water uptake, which mechanically weakens the membrane. This situation was exacerbated by the limited acidity of the aromatic sulfonic acids (pK{sub A} {approx} 2-3). The possibility of using partial fluorination to raise the acid dissociation constant is discussed.

  16. Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Golshahi, S.; Rozati, S.M.; Botelho do Rego, A.M.; Wang, J.; Elangovan, E.; Martins, R.; Fortunato, E.

    2013-01-01

    Highlights: ► Hall-effect measurement introduces the optimum temperature of 450 °C for fabricating p-type high quality ZnO films. ► X-ray photoelectron spectroscopy (XPS) proved the nitrogen presence at the surface of doped ZnO thin films at all substrate temperatures. ► Films prepared at lower substrate temperature (300 °C and 350 °C) own wider band gaps. ► Surface roughness strongly is affected by substrate temperature variations. - Abstract: The effect of substrate temperature (T s ) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T s was varied from 300 °C to 500 °C, with a step of 50 °C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 °C and 500 °C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 0 0) crystal plane, irrespective of the variation in T s . The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 °C is the optimal T s . Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T s until 400 °C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T s . The optical band gap calculated from the absorption edge showed that the films deposited with T s of 300 °C and 350 °C possess higher values than those deposited at higher T s .

  17. Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

    Energy Technology Data Exchange (ETDEWEB)

    Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

    2012-01-31

    The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

  18. Simulation study of temperature-dependent diffusion behaviors of Ag/Ag(001) at low substrate temperature

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Danyun; Mo, Yunjie [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 (China); Feng, Xiaofang [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou, 510275 (China); He, Yingyou [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 (China); Jiang, Shaoji, E-mail: stsjsj@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou, 510275 (China)

    2017-06-01

    Highlights: • The model of combinations of nearest-neighbor atoms of adatom was built to calculate the diffusion barrier of every configuration for Ag/Ag(001). • The complete potential energy curve of a specific diffusion path on the surface was worked out with the help of elementary diffusion behaviors. • The non-monotonic relation between the surface roughness and the substrate temperature (decreasing from 300 K to 100 K) was demonstrated. • A theoretical explanation of diffusion mechanism for the non-monotonic variation of roughness at low substrate temperature was presented. - Abstract: In this study, a model based on the First Principles calculations and Kinetic Monte Carlo simulation were established to study the growth characteristic of Ag thin film at low substrate temperature. On the basis of the interaction between the adatom and nearest-neighbor atoms, some simplifications and assumptions were made to categorize the diffusion behaviors of Ag adatoms on Ag(001). Then the barriers of all possible diffusion behaviors were calculated using the Climbing Image Nudged Elastic Band method (CI-NEB). Based on the Arrhenius formula, the morphology variation, which is attributed to the surface diffusion behaviors during the growth, was simulated with a temperature-dependent KMC model. With this model, a non-monotonic relation between the surface roughness and the substrate temperature (decreasing from 300 K to 100 K) were discovered. The analysis of the temperature dependence on diffusion behaviors presents a theoretical explanation of diffusion mechanism for the non-monotonic variation of roughness at low substrate temperature.

  19. Simulation study of temperature-dependent diffusion behaviors of Ag/Ag(001) at low substrate temperature

    International Nuclear Information System (INIS)

    Cai, Danyun; Mo, Yunjie; Feng, Xiaofang; He, Yingyou; Jiang, Shaoji

    2017-01-01

    Highlights: • The model of combinations of nearest-neighbor atoms of adatom was built to calculate the diffusion barrier of every configuration for Ag/Ag(001). • The complete potential energy curve of a specific diffusion path on the surface was worked out with the help of elementary diffusion behaviors. • The non-monotonic relation between the surface roughness and the substrate temperature (decreasing from 300 K to 100 K) was demonstrated. • A theoretical explanation of diffusion mechanism for the non-monotonic variation of roughness at low substrate temperature was presented. - Abstract: In this study, a model based on the First Principles calculations and Kinetic Monte Carlo simulation were established to study the growth characteristic of Ag thin film at low substrate temperature. On the basis of the interaction between the adatom and nearest-neighbor atoms, some simplifications and assumptions were made to categorize the diffusion behaviors of Ag adatoms on Ag(001). Then the barriers of all possible diffusion behaviors were calculated using the Climbing Image Nudged Elastic Band method (CI-NEB). Based on the Arrhenius formula, the morphology variation, which is attributed to the surface diffusion behaviors during the growth, was simulated with a temperature-dependent KMC model. With this model, a non-monotonic relation between the surface roughness and the substrate temperature (decreasing from 300 K to 100 K) were discovered. The analysis of the temperature dependence on diffusion behaviors presents a theoretical explanation of diffusion mechanism for the non-monotonic variation of roughness at low substrate temperature.

  20. Higher-resolution selective metallization on alumina substrate by laser direct writing and electroless plating

    International Nuclear Information System (INIS)

    Lv, Ming; Liu, Jianguo; Wang, Suhuan; Ai, Jun; Zeng, Xiaoyan

    2016-01-01

    Graphical abstract: - Highlights: • Mechanisms of laser direct writing and electroless plating were studied. • Active seeds in laser-irradiated zone and laser-affected zone were found to be different. • A special chemical cleaning method with aqua regia was taken. • Higher-resolution copper patterns on alumina ceramic were obtained conveniently. - Abstract: How to fabricate conductive patterns on ceramic boards with higher resolution is a challenge in the past years. The fabrication of copper patterns on alumina substrate by laser direct writing and electroless copper plating is a low cost and high efficiency method. Nevertheless, the lower resolution limits its further industrial applications in many fields. In this report, the mechanisms of laser direct writing and electroless copper plating were studied. The results indicated that as the decomposed products of precursor PdCl_2 have different chemical states respectively in laser-irradiated zone (LIZ) and laser-affected zone (LAZ). This phenomenon was utilized and a special chemical cleaning method with aqua regia solution was taken to selectively remove the metallic Pd in LAZ, while kept the PdO in LIZ as the only active seeds. As a result, the resolution of subsequent copper patterns was improved significantly. This technique has a great significance to develop the microelectronics devices.

  1. Fabrication of AlN thin films on different substrates at ambient temperature

    CERN Document Server

    Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

    2002-01-01

    Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

  2. Developing upconversion nanoparticle-based smart substrates for remote temperature sensing

    Science.gov (United States)

    Coker, Zachary; Marble, Kassie; Alkahtani, Masfer; Hemmer, Philip; Yakovlev, Vladislav V.

    2018-02-01

    Recent developments in understanding of nanomaterial behaviors and synthesis have led to their application across a wide range of commercial and scientific applications. Recent investigations span from applications in nanomedicine and the development of novel drug delivery systems to nanoelectronics and biosensors. In this study, we propose the application of a newly engineered temperature sensitive water-based bio-compatible core/shell up-conversion nanoparticle (UCNP) in the development of a smart substrate for remote temperature sensing. We developed this smart substrate by dispersing functionalized nanoparticles into a polymer solution and then spin-coating the solution onto one side of a microscope slide to form a thin film substrate layer of evenly dispersed nanoparticles. By using spin-coating to deposit the particle solution we both create a uniform surface for the substrate while simultaneously avoid undesired particle agglomeration. Through this investigation, we have determined the sensitivity and capabilities of this smart substrate and conclude that further development can lead to a greater range of applications for this type smart substrate and use in remote temperature sensing in conjunction with other microscopy and spectroscopy investigations.

  3. Influence of substrate temperature on the electronic and optical properties of Cr doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Sen, Sagar; Gupta, Ratnesh, E-mail: gratnesh-ioi@yahoo.com [School of Instrumentation, Devi Ahilya University, Khandwa Road, Indore-452001 (India); Gupta, M. [UGC-DAE CSR Indore Centre, Indore 452 001 (India)

    2016-05-23

    We report the effects of substrate temperature on electrical and optical properties of the Cr-doped TiO{sub 2} film by pulsed laser deposition on Si(100). X-ray reflectivity pattern suggest that the single layer film have been deposited. Total thickness of 86 nm have been obtained. UV-Vis reflectance technique has been used to obtain its optical properties. From the Tauc plot, the bandgap for the film deposited at 150°C is higher compared to the film deposited at lower temperature.

  4. Effect of substrate temperature and post annealing temperature on ZnO:Zn PLD thin film properties

    Science.gov (United States)

    Hasabeldaim, E.; Ntwaeaborwa, O. M.; Kroon, R. E.; Coetsee, E.; Swart, H. C.

    2017-12-01

    The pulsed laser deposition (PLD) substrate temperature and post-annealing temperature are effective methods to control the film optical and structural properties. The structure, morphology and optical properties of the deposited and post-annealed PLD ZnO:Zn films were studied. The films were deposited at different substrate temperatures of 50 °C, 200 °C and 400 °C. The films deposited at the substrate temperature of 50 °C and 200 °C were post-annealed in air at 400 °C and 600 °C for two hours. The films all had a highly preferential orientation with the hexagonal c-axis perpendicular to the substrate surface. The stress was found to be compressive stress with values -3.289 GPa, -4.864 GPa and -4.425 GPa for the film deposited at 50 °C, 200 °C and 400 °C, respectively. After post-annealing treatments, the stress of the films was almost completely released and stress-free films were obtained. The crystallite sizes were 19 nm, 25 nm and 39 nm, while the average particles sizes were 95 nm, 85 nm and 129 nm for the film deposited at 50 °C, 200 °C and 400 °C respectively. The crystallite sizes and particles sizes seemed to increase with the increase in the substrate temperature. Contrary to this, the change in crystallite sizes were inversely proportional to the particles size when increasing the post-annealing temperatures. Deconvoluted X-ray photoelectron spectroscopy peaks of the O1s binding energy region revealed that the films deposited at different substrate temperatures contained oxygen-related defects. Photoluminescence studies revealed that the films all emitted ultra-violet emission around 379 nm. The film deposited at 50 °C emitted a broad green emission centered at ∼524 nm. By increasing the substrate temperature up to 200 °C and 400 °C a new orange emission around 621 nm and 634 nm as well as a weak emission around 416 nm and 500 nm were observed, respectively. After post-annealing treatments, new bands over the visible region (blue, green

  5. Effect of substrate temperature on the radiation damage from MeV Si implantation in Si

    International Nuclear Information System (INIS)

    Yu, X.K.; Shao Lin; Rusakova, Irene; Wang, X.M.; Ma, K.B.; Chen, H.; Liu, Jiarui; Chu, W.-K.

    2006-01-01

    We have investigated the radiation damage by MeV implantation of Si in Si and its evolution under thermal annealing. Si wafers were implanted with MeV Si at various substrate temperatures. Damages were characterized by Rutherford-backscattering (RBS) channeling and by transmission electron microscopy (TEM). Defect formation after post-implantation annealing is very sensitive to the substrate temperatures during implantation. When the substrate temperature was decreased to 200 K, TEM revealed two distinct bands of damage after annealing: one around the mean projected ion range and another at half the projected range. Our study indicates that the formation of defects at half range results from the solid phase epitaxy growth of initial buried amorphous layers

  6. Effect of substrate temperatures on the optical properties of evaporated Sc2O3 thin films

    International Nuclear Information System (INIS)

    Liu Guanghui; Jin Yunxia; He Hongbo; Fan Zhengxiu

    2010-01-01

    Scandium oxide (Sc 2 O 3 ) films were deposited by electron beam evaporation with substrate temperatures varying from 50 to 350 o C. X-ray diffraction, scanning electron microscopy, spectrometer, and optical profilograph were employed to investigate the structural and optical properties of the films. The refractive index and extinction coefficient were calculated from the transmittance and reflectance spectra, and then the energy band gaps were deduced and discussed. Laser induced damage threshold of the films were also characterized. Optical and structural properties of Sc 2 O 3 films were found to be sensitive to substrate temperature.

  7. Influence of substrate temperature on the optical and electrical properties magnetron sputtering ITO films

    International Nuclear Information System (INIS)

    Khripunov, G.S.; Yurchenko, G.V.

    1999-01-01

    Electrical and optical properties of ITO films obtained at substrate temperature from 200 degree C to 500 degree C by magnetron sputtering of target 95% In 2 O 3 - 5% SnO 2 were studied. It was shown that the ITO film obtained at the substrate temperature 300 i N have optimum combination of the optical and electrical characteristics: resistivity 2.1 centre dot 10 -4 Ω cm, transmittance in visible spectral range about 88% at the thickness film 0.61 μ, factor of quality reaches 8.2 centre dot 10 -2 Ω 1

  8. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    International Nuclear Information System (INIS)

    Sandstrom, R.L.; Giess, E.A.; Gallagher, W.J.; Segmueller, A.; Cooper, E.I.; Chisholm, M.F.; Gupta, A.; Shinde, S.; Laibowitz, R.B.

    1988-01-01

    We demonstrate that lanthanum gallate (LaGaO 3 ) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa 2 Cu 3 O/sub 7-//sub x/, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa 2 Cu 3 O/sub 7-//sub x/ films grown on LaGaO 3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K

  9. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    Science.gov (United States)

    Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

    1988-11-01

    It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

  10. Electrochemical depositing rGO-Ti-rGO heterogeneous substrates with higher thermal conductivity and heat transfer performance compared to pure Ti.

    Science.gov (United States)

    Wang, Jing; Wang, Huatao; Zhang, Wenying; Yang, Xinyi; Wen, Guangwu; Wang, Yijie; Zhou, Weiwei

    2017-02-17

    Titanium (Ti) and its alloys are widely applied in many high strength, light weight applications, but their thermal conductivity is lower compared to that of other metals, which limits their further applications. In this paper, we demonstrated experimentally that rGO-Ti-rGO heterogeneous substrates with higher thermal conductivity, up to ∼38.8% higher than Ti, could be fabricated by electrochemical depositing rGO on their surface. The rGO layers are grown on the surface of Ti substrates, with appearance of bedclothes on the beds. The thickness of rGO layers is around 300-500 nm and around 600-1000 nm when deposited for 5 cycles and 10 cycles, respectively. According to the cooling experiment results, as-prepared Ti + rGO substrates can present excellent thermal conduction performance, and reduce the chip temperature close to 3.2 °C-13.1 °C lower than Ti alloy substrates with the heat flow density of 0.4-3.6 W cm -2 . Finally, the approach to electro-chemically deposit hundreds of nanometer rGO layers on the surface of Ti substrates can improve their thermal conductivity and heat transfer performance, which may have further application in the increasing thermal conduction of other metal-alloys, ceramics and polymers.

  11. Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass

    International Nuclear Information System (INIS)

    Makino, Hisao; Miyake, Aki; Yamada, Takahiro; Yamamoto, Naoki; Yamamoto, Tetsuya

    2009-01-01

    Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth

  12. Significant effect of substrate temperature on the phase structure, optical and electrical properties of RF sputtered CIGS films

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhou; Yan Yong; Li Shasha; Zhang Yanxia; Yan Chuanpeng; Liu Lian; Zhang Yong [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhao Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Secondary phase exist in the RF sputtered CIGS films as it deposited at 150 Degree-Sign C and 500 Degree-Sign C. Black-Right-Pointing-Pointer CIGS films deposited beyond 350 Degree-Sign C show (1 1 2) prefer orientation. Black-Right-Pointing-Pointer E{sub g} of the CIGS films increased with the increase of substrate temperature. Black-Right-Pointing-Pointer Conductivity of the films is affected by 'variable range hopping' mechanism. - Abstract: This work studied the effect of substrate temperature on the phase structure, optical and electrical properties of the one-step radio frequency sputtered Cu(In,Ga)Se{sub 2} (CIGS) thin films. X-ray diffraction (XRD) analysis revealed that all the deposited CIGS films are chalcopyrite phase with polycrystalline structure. The films deposited beyond the substrate temperature of 350 Degree-Sign C show (1 1 2) prefer orientation. Raman spectra reveal that the 150 Degree-Sign C deposited CIGS film coexists with Cu{sub 2-x}Se phase and the 500 Degree-Sign C deposited film contains ordered defect compound (ODC) phase. With the increase of substrate temperature, energy band gap of the CIGS film increase from 0.99 to 1.27 eV. Films deposited at higher temperature exhibit larger electrical conductivity. Conductivity of the CIGS films is dominated by 'variable range hopping' mechanism. The disorder in our CIGS the films is associated with the formation of intrinsic defects such as V{sub Se} and In{sub Cu} for their low formation energy.

  13. Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

    Directory of Open Access Journals (Sweden)

    Tetiana Slusar

    2016-02-01

    Full Text Available We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT of vanadium dioxide (VO2 thin films synthesized on aluminum nitride (AlN/Si (111 substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010 ‖ AlN (0001 with VO2 [101] ‖   AlN   [ 2 1 ̄ 1 ̄ 0 ] zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2 single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ∼130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications.

  14. Silver inkjet printing with control of surface energy and substrate temperature

    International Nuclear Information System (INIS)

    Lee, S-H; Shin, K-Y; Hwang, J Y; Kang, K T; Kang, H S

    2008-01-01

    The characteristics of silver inkjet printing were intensively investigated with control of surface energy and substrate temperature. A fluorocarbon (FC) film was spincoated on a silicon (Si) substrate to obtain a hydrophobic surface, and an ultraviolet (UV)/ozone (O 3 ) treatment was performed to control the surface wettability of the FC film surface. To characterize the surface changes, we performed measurements of the static and dynamic contact angles and calculated the surface energy by Wu's harmonic mean model. The surface energy of the FC film increased with the UV/O 3 treatment time, while the contact angles decreased. In silver inkjet printing, the hydrophobic FC film could reduce the diameter of the printed droplets. Merging of deposited droplets was observed when the substrate was kept at room temperature. Substrate heating was effective in preventing the merging phenomenon among the deposited droplets, and in reducing the width of printed lines. The merging phenomenon of deposited droplets was also prevented by increasing the UV/O 3 treatment time. Continuous silver lines in the width range of 48.04–139.21 µm were successfully achieved by inkjet printing on the UV/O 3 -treated hydrophobic FC films at substrate temperatures below 90 °C

  15. Carbon Dioxide Adsorption by Calcium Zirconate at Higher Temperature

    Directory of Open Access Journals (Sweden)

    K. B. Kale

    2012-12-01

    Full Text Available The CO2 adsorption by calcium zirconate was explored at pre- and post- combustion temperature condition. The several samples of the calcium zirconate were prepared by different methods such as sol-gel, solid-solid fusion, template and micro-emulsion. The samples of the calcium zirconate were characterized by measurement of surface area, alkalinity/acidity, and recording the XRD patterns and SEM images. The CO2 adsorptions by samples of the calcium zirconate were studied in the temperature range 100 to 850 oC and the CO2 adsorptions were observed in the ranges of 6.88 to 40.6 wt % at 600 0C and 8 to 16.82 wt% at in between the temperatures 200 to 300 oC. The effect of Ca/Zr mol ratio in the samples of the calcium zirconate on the CO2 adsorption and alkalinity were discussed. The adsorbed moisture by the samples of the calcium zirconate was found to be useful for the CO2 adsorption. The promoted the samples of the calcium zirconate by K+, Na+, Rb+, Cs+, Ag+ and La3+ showed the increased CO2 adsorption. The exposure time of CO2 on the samples of the calcium zirconate showed the increased CO2 adsorption. The samples of the calcium zirconate were found to be regenerable and reusable several times for the adsorption of CO2 for at the post- and pre-combustion temperature condition. Copyright © 2012 by BCREC Undip. All rights reservedReceived: 23rd June 2012, Revised: 28th August 2012, Accepted: 30th August 2012[How to Cite: K. B. Kale, R. Y. Raskar, V. H. Rane and A. G.  Gaikwad (2012. Carbon Dioxide Adsorption by Calcium Zirconate at Higher Temperature. Bulletin of Chemical Reaction Engineering & Catalysis, 7 (2: 124-136. doi:10.9767/bcrec.7.2.3686.124-136] [How to Link / DOI: http://dx.doi.org/10.9767/bcrec.7.2.3686.124-136 ] | View in 

  16. Extended Opacity Tables with Higher Temperature-Density-Frequency Resolution

    Science.gov (United States)

    Schillaci, Mark; Orban, Chris; Delahaye, Franck; Pinsonneault, Marc; Nahar, Sultana; Pradhan, Anil

    2015-05-01

    Theoretical models for plasma opacities underpin our understanding of radiation transport in many different astrophysical objects. These opacity models are also relevant to HEDP experiments such as ignition scale experiments on NIF. We present a significantly expanded set of opacity data from the widely utilized Opacity Project, and make these higher resolution data publicly available through OSU's portal with dropbox.com. This expanded data set is used to assess how accurate the interpolation of opacity data in temperature-density-frequency dimensions must be in order to adequately model the properties of most stellar types. These efforts are the beginning of a larger project to improve the theoretical opacity models in light of experimental results at the Sandia Z-pinch showing that the measured opacity of Iron disagrees strongly with all current models.

  17. Substrate temperature optimization for Cu(In, Ga)Se{sub 2} solar cells on flexible stainless steels

    Energy Technology Data Exchange (ETDEWEB)

    Liang, X.; Zhu, H.; Chen, J., E-mail: chenjingwei@126.com; Zhou, D.; Zhang, C.; Guo, Y.; Niu, X.; Li, Z.; Mai, Y., E-mail: yaohuamai@hbu.edu.cn

    2016-04-15

    Graphical abstract: - Highlights: • CIGS thin films are deposited on flexible SS substrates at different substrate temperatures. • CIGS thin films deposited at different T{sub S2} show different Ga/(Ga + In) ratio profiles. • All CIGS thin films show (112) and (220/204) preferred orientations with a shift to higher angles. • Conversion efficiency of 11.3% is obtained for CIGS solar cells deposited at 500 °C. - Abstract: Cu(In, Ga)Se{sub 2} (CIGS) thin films are deposited on flexible stainless steel (SS) substrates using the so called 3-stage co-evaporation process at different substrate temperatures ranging from 440 °C to 640 °C during the 2nd stage and the 3rd stage (T{sub S2}). The effects of T{sub S2} on the properties of CIGS thin films are systematically investigated. It is found by secondary ion mass spectrometry measurement that CIGS thin films deposited at different T{sub S2} show different Ga/(Ga + In) ratio (GGI) profiles along the growth direction. High T{sub S2} facilitates the grain growth and leads to larger grain size. However, high T{sub S2} worsens the spectral response of CIGS solar cells in the long wavelength range, which is partly attributed to the too much iron atom diffusion from the SS substrates into the CIGS thin films. All CIGS thin films show (112) preferred orientations with a shift to higher angle due to variation of compositions. A shoulder-like two-peak structure of (112) and (220/204) peaks appears for CIGS thin films deposited at lower T{sub S2}. Conversion efficiency of 11.3% is obtained for CIGS thin film solar cells deposited at the T{sub S2} of 500 °C.

  18. New Crystal-Growth Methods for Producing Lattice-Matched Substrates for High-Temperature Superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Boatner, L.A.

    2008-06-24

    This effort addressed the technical problem of identifying and growing, on a commercial scale, suitable single-crystal substrates for the subsequent deposition of epitaxial thin films of high temperature semiconductors such as GaN/AlN. The lack of suitable lattice-matched substrate materials was one of the major problem areas in the development of semiconducting devices for use at elevated temperatures as well as practical opto-electronic devices based on Al- and GaN technology. Such lattice-matched substrates are necessary in order to reduce or eliminate high concentrations of defects and dislocations in GaN/AlN and related epitaxial thin films. This effort concentrated, in particular, on the growth of single crystals of ZnO for substrate applications and it built on previous ORNL experience in the chemical vapor transport growth of large single crystals of zinc oxide. This combined expertise in the substrate growth area was further complemented by the ability of G. Eres and his collaborators to deposit thin films of GaN on the subject substrates and the overall ORNL capability for characterizing the quality of such films. The research effort consisted of research on the growth of two candidate substrate materials in conjunction with concurrent research on the growth and characterization of GaN films, i.e. the effort combined bulk crystal growth capabilities in the area of substrate production at both ORNL and the industrial partner, Commercial Crystal Growth Laboratories (CCL), Naples, Florida, with the novel thin-film deposition techniques previously developed in the ORNL SSD.

  19. Low temperature synthesis of graphene on arbitrary substrates and its transport properties

    Science.gov (United States)

    Zhao, Rong; Akhtar, Meysam; Alruqi, Adel; Jasinski, Jacek; Sumanasekera, Gamini; Department of Physics; Astronomy, University of Louisville Collaboration; Conn CenterRenewable Energy, University of Louisville Collaboration

    Here we report the direct synthesis of uniform and vertically oriented graphene films on multiple substrates including glass, Si/SiO2, and copper foil by radio-frequency plasma enhanced chemical vapor deposition (PECVD) using methane as the carbon precursor at relatively low temperatures. Raman spectra of all the samples show characteristic Raman peaks of graphene. The temperature dependence of electrical transport properties such as 4-probe resistance, thermo electrical power and hall mobility were measured for graphene grown on glass substrates at varying temperature from 500 ° C to 700 ° C. The morphological and surface characteristics were also studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). This work demonstrates the potential of low temperature and transfer-free graphene growth for future graphene-based electronic applications.

  20. Forest litter crickets prefer higher substrate moisture for oviposition: Evidence from field and lab experiments.

    Science.gov (United States)

    de Farias-Martins, Fernando; Sperber, Carlos Frankl; Albeny-Simões, Daniel; Breaux, Jennifer Ann; Fianco, Marcos; Szinwelski, Neucir

    2017-01-01

    For insects, choosing a favorable oviposition site is a type of parental care, as far as it increases the fitness of its offspring. Niche theory predicts that crickets should show a bell-shaped oviposition response to substrate moisture. However, lab experiments with mole crickets showed a linear oviposition response to substrate moisture. Studies with the house cricket Acheta domesticus also showed a linear juvenile body growth response to water availability, thus adult ovipositing females should respond positively to substrate moisture. We used a field experiment to evaluate the relationship between oviposition preference and substrate moisture in forest litter-dwelling cricket species. We also evaluated oviposition responses to substrate moisture level in Ubiquepuella telytokous, the most abundant litter cricket species in our study area, using a laboratory study. We offered cotton substrate for oviposition which varied in substrate moisture level from zero (i.e., dry) to maximum water absorption capacity. We used two complementary metrics to evaluate oviposition preference: (i) presence or absence of eggs in each sampling unit as binary response variable, and (ii) number of eggs oviposited per sampling unit as count response variable. To test for non-linear responses, we adjusted generalized additive models (GAMM) with mixed effects. We found that both cricket oviposition probability and effort (i.e., number of eggs laid) increased linearly with substrate moisture in the field experiment, and for U. telytokous in the lab experiment. We discarded any non-linear responses. Our results demonstrate the importance of substrate moisture as an ecological niche dimension for litter crickets. This work bolsters knowledge of litter cricket life history association with moisture, and suggests that litter crickets may be particularly threatened by changes in climate that favor habitat drying.

  1. Influence of the starch content and sintering temperature on the processing of porous zirconia substrates

    International Nuclear Information System (INIS)

    Albano, Maria P; Garrido, Liliana B

    2008-01-01

    Porous ceramics are used as electrodes in fuel cells, separators in batteries, filters, etc. Thin porous substrates of zirconium stabilized with yttrium oxide (ZSY) are used as anodes in solid oxide fuel cells. One way to obtain a porous band is to mix starch particles during the preparation stage of the ZSY suspension. The starch burns during the removal of the binder and leaves stable pores that are not eliminated in the subsequent sintering stage. This work used the band pouring process to produce porous bands of ZSY with porosities of 29% to 53% using starch as a transitory additive. Concentrated aqueous suspensions of ZSY were prepared with different contents of starch and of an acrylic latex binder. The influence of the fraction of starch volume and of the temperature on the sintering behavior and on the final micro structure of the bands was studied. The total porosity of the bands was higher than the fractions in volume of added starch, due to the presence of closed porosity in the matrix. The deviations compared to the porosity predicted based on the fractions in the volume of starch, were greater as the starch content increased. The percentage of open porosity in the sintered bands depended on the fraction in the volume of added starch and on the sintering temperature. When the fraction in volume of starch increased from 17.6% to 37.8% a gradual increase occurred in the opening of the porous structure. The contraction of the bands during sintering at a given temperature correlated with the density of the packing of ZSY (au)

  2. Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys

    International Nuclear Information System (INIS)

    Rajeswaran, G.; Kampas, F.J.; Vanier, P.E.; Sabatini, R.L.; Tafto, J.

    1983-01-01

    The glow-discharge decomposition of silane diluted in hydrogen using diborane as a dopant results in the deposition of p-type microcrystalline silicon films at relatively low temperatures. The conductivity of these films is critically dependent on the substrate temperature when the ratio of silane flow rate to total gas flow rate is 1%. Electron micrographs show that highly conducting films contain numerous clusters of 2.5-nm crystallites that are embedded in an amorphous medium

  3. Plasma deposition of thin film silicon at low substrate temperature and at high growth rate

    NARCIS (Netherlands)

    Verkerk, A.D.|info:eu-repo/dai/nl/304831719

    2009-01-01

    To expand the range of applications for thin film solar cells incorporating hydrogenated amorphous silicon (a-Si:H) and hydrogenated nanocrystalline silicon (nc-Si:H), the growth rate has to be increased 0.5 or less to several nm/s and the substrate temperature should be lowered to around 100 C. In

  4. Reduced substrate supply limits the temperature response of soil organic carbon decomposition

    Science.gov (United States)

    Cinzia Fissore; Christian P. Giardina; Randall K. Kolka

    2013-01-01

    Controls on the decomposition rate of soil organic carbon (SOC), especially the more stable fraction of SOC, remain poorly understood, with implications for confidence in efforts to model terrestrial C balance under future climate. We investigated the role of substrate supply in the temperature sensitivity of SOC decomposition in laboratory incubations of coarse-...

  5. Substrates and temperatures for the germination test of Chorisia glaziovii (O. Kuntze seeds

    Directory of Open Access Journals (Sweden)

    Roberta Sales Guedes

    2011-12-01

    Full Text Available The species Chorisia glaziovii O. Kuntze is native to the northeast of Brazil, belongs to Bombacaceae family and has diversified uses in folk medicine, recovery of degraded areas and upholstery industry. The present work was realizated with the objective to determine the substrate type and temperature for conduction of germination tests with C. glaziovii seeds. The experiment was carried out in the Laboratory of Analysis of Seeds (CCA - UFPB, Areia City, Northeast of Brazil, in design completely randomized with the treatments distributed in outline factorial 4 x 4 (temperatures of 25, 30, 35 and 20-30°C and substrate towel paper, among blotting paper, between sand and between vermiculite. The following parameters were analyzed: germination percentage, first count germination, germination speed index, and length of seedlings. The temperature of 35°C was shown inadequate for conduction of germination and vigor tests of seeds of C. glaziovii, independently of the used substrates. It is recommended for conduction of the germination and vigor tests of the seeds of C. glaziovii the substrate between sand or towel paper, in the temperatures of 25 and 20-30°C.

  6. Effect of substrate temperature and deposition rate on the morphology and optical properties of Ti films

    Energy Technology Data Exchange (ETDEWEB)

    Einollahzadeh-Samadi, M.; Dariani, R.S., E-mail: dariani@alzahra.ac.ir

    2013-09-01

    Titanium films are deposited on transparent fluorine-doped tin oxide (FTO) glass substrates by DC magnetron sputtering process. Influences imposed by sputtering rate and substrate temperature on surface morphology and optical properties of the deposited Ti films are investigated. We observed that all the sputtered films exhibit uniform and compact surface morphology without peeling and cracking. Morphology of the films is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD). The optical properties of the films are investigated using UV–vis spectroscopy. The morphological studies indicate that by increasing the substrate temperature from room temperature to 250 °C and/or decreasing sputtering rate from 660 Å/min to 540 Å/min the surface roughness decreased from 73.4 to 31.0 nm and the grain size increases from 50.76 nm to 163.93 nm. An important effect of the root mean square (RMS) surface roughness and grain size is modification of the films optical properties. In fact, an enhancement of refractive index n for the Ti films deposited at high substrate temperature and/or high deposition rate is observed, that is attributed to reduction of RMS roughness. This effect is attributed to increment of fractional volume which leads to an increase in density of deposited film. Thus, by controlling the sputtering conditions one can reach to the desired morphological and optical properties.

  7. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    International Nuclear Information System (INIS)

    Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R.; Restrepo-Parra, E.; Arango, P.J.

    2010-01-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T room ), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I D /I G or sp 3 /sp 2 ratio and not by the absolute sp 3 or sp 2 concentration.

  8. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    Energy Technology Data Exchange (ETDEWEB)

    Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia)

    2010-10-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T{sub room}), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 {+-} 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I{sub D}/I{sub G} or sp{sup 3}/sp{sup 2} ratio and not by the absolute sp{sup 3} or sp{sup 2} concentration.

  9. Molecular dynamics study of the effect of substrate temperature and Ar ion assisted deposition on the deposition of amorphous TiO_2 films

    International Nuclear Information System (INIS)

    Chen, Xian; Zhang, Jing; Zhao, Yu-Qing

    2017-01-01

    Highlights: • The surface roughness of a-TiO_2 films is decreased with the increment of the Ar ion assisted energy. • The surface roughness of a-TiO_2 films is decreased with higher substrate temperature when the substrate has an island structure. • The assisted Ar ion has power of making a flat surface and increasing the local temperature. • The assisted Ar ion will influence the growth mode with the change of surface atom mobility. • The Volmer-Weber (island) growth mode is inhibited with a high assisted Ar ion energy. - Abstract: This paper has investigated the impact of the substrate temperature and Ar ion assisted deposition on the surface structure formation mechanism and the film properties during the amorphous TiO_2 thin film deposition process with the molecular dynamics simulation method. The results show that the reduction of the surface roughness happen when the energy of Ar ions assisted is increased or the substrate temperature rises, and also the film density on surface is changed with the increasing of Ar ions energy and substrate temperature. It is also found that the Volmer-Weber (island) growth mode of films is promoted by the lower Ar ion energy and higher substrate temperature when the substrate has an island structure. The assisted Ar ion has power of making a flat surface and increasing the local temperature. Besides, it will influence the growth mode with the change of surface atom mobility. With a high assisted Ar ion energy the Volmer-Weber (island) growth mode is inhibited, which will be conducive to the formation of more smooth film surface.

  10. Molecular dynamics study of the effect of substrate temperature and Ar ion assisted deposition on the deposition of amorphous TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xian, E-mail: mus_c@qq.com [Science and Technology on Analog Integrated Circuit Laboratory, ChongQing, 401332 (China); Zhang, Jing [Science and Technology on Analog Integrated Circuit Laboratory, ChongQing, 401332 (China); Zhao, Yu-Qing [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’AN, 710049 (China)

    2017-05-15

    Highlights: • The surface roughness of a-TiO{sub 2} films is decreased with the increment of the Ar ion assisted energy. • The surface roughness of a-TiO{sub 2} films is decreased with higher substrate temperature when the substrate has an island structure. • The assisted Ar ion has power of making a flat surface and increasing the local temperature. • The assisted Ar ion will influence the growth mode with the change of surface atom mobility. • The Volmer-Weber (island) growth mode is inhibited with a high assisted Ar ion energy. - Abstract: This paper has investigated the impact of the substrate temperature and Ar ion assisted deposition on the surface structure formation mechanism and the film properties during the amorphous TiO{sub 2} thin film deposition process with the molecular dynamics simulation method. The results show that the reduction of the surface roughness happen when the energy of Ar ions assisted is increased or the substrate temperature rises, and also the film density on surface is changed with the increasing of Ar ions energy and substrate temperature. It is also found that the Volmer-Weber (island) growth mode of films is promoted by the lower Ar ion energy and higher substrate temperature when the substrate has an island structure. The assisted Ar ion has power of making a flat surface and increasing the local temperature. Besides, it will influence the growth mode with the change of surface atom mobility. With a high assisted Ar ion energy the Volmer-Weber (island) growth mode is inhibited, which will be conducive to the formation of more smooth film surface.

  11. Temperature dependence of the aggregation behavior of aluminum nanoparticles on liquid substrate

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Qi-Fa; Cheng, Yi; Tao, Xiang-Ming; Yang, Bo [Zhejiang University, Department of Physics (China); Li, Bao-Xing [Hangzhou Normal University, Department of Physics (China); Ye, Gao-Xiang, E-mail: gxye@zju.edu.cn, E-mail: gxye@mail.hz.zj.cn [Zhejiang University, Department of Physics (China)

    2015-03-15

    Aluminum (Al) nanoparticle aggregates have been fabricated by thermal evaporation method on silicone oil surfaces at different substrate temperatures. The average diameter and height of the Al nanoparticles, namely Φ{sub avg} and H{sub avg}, are of the order of 10{sup 1} and 10{sup 0} nm, respectively. As the substrate temperature T{sub s} increases from 293 to 393 K, to the first order of approximation, Φ{sub avg} increases exponentially and H{sub avg} increases quickly between 333 and 373 K. By transmission electron microscopy measurement, we find that the Al nanoparticles and their aggregates exhibit amorphous structure over the whole temperature range. A simple theoretical model is established to explain the coalescence process of the nanoparticles with T{sub s}.

  12. Temperature dependence of the aggregation behavior of aluminum nanoparticles on liquid substrate

    International Nuclear Information System (INIS)

    Pan, Qi-Fa; Cheng, Yi; Tao, Xiang-Ming; Yang, Bo; Li, Bao-Xing; Ye, Gao-Xiang

    2015-01-01

    Aluminum (Al) nanoparticle aggregates have been fabricated by thermal evaporation method on silicone oil surfaces at different substrate temperatures. The average diameter and height of the Al nanoparticles, namely Φ avg and H avg , are of the order of 10 1 and 10 0 nm, respectively. As the substrate temperature T s increases from 293 to 393 K, to the first order of approximation, Φ avg increases exponentially and H avg increases quickly between 333 and 373 K. By transmission electron microscopy measurement, we find that the Al nanoparticles and their aggregates exhibit amorphous structure over the whole temperature range. A simple theoretical model is established to explain the coalescence process of the nanoparticles with T s

  13. Temperature effects on kinetic parameters and substrate affinity of Cel7A cellobiohydrolases

    DEFF Research Database (Denmark)

    Sørensen, Trine Holst; Cruys-Bagger, Nicolaj; Windahl, Michael Skovbo

    2015-01-01

    Hypocrea jecorina and thermophilic Rasamsonia emersonii and two variants of these enzymes designed to elucidate the role of the carbohydrate binding module (CBM). We consistently found that the maximal rate increased strongly with temperature, whereas the affinity for the insoluble substrate decreased...... for affinity it slows down the catalytic process. Cel7A from the thermophilic organism was moderately more activated by temperature than the mesophilic analog. This is in accord with general theories on enzyme temperature adaptation and possibly relevant information for the selection of technical cellulases....

  14. Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs

    International Nuclear Information System (INIS)

    Ney, A; Harris, J S Jr; Parkin, S S P

    2006-01-01

    The temperature dependence of the magnetization of a light emitting diode having a ferromagnetic contact (spin-LED) is measured from 2 to 300 K in magnetic fields from 30 to 70 kOe and it is found that it originates from the GaAs substrate. The magnetization of GaAs comprises a van Vleck-type paramagnetic contribution to the susceptibility which scales inversely with the band gap of the semiconductor. Thus, the temperature dependence of the band gap of GaAs accounts for the non-linear temperature dependent magnetic susceptibility of GaAs and thus, at large magnetic fields, for the spin-LED

  15. Effect of substrate temperature on structural and optical properties of nitrogen doped SnO2 thin film

    International Nuclear Information System (INIS)

    Thakur, Anup; Kumar, Varinder; Kang, Se Jun; Lee, Ik-Jae; Gautam, Sanjeev; Chae, K. H.; Shin, Hyun Joon

    2014-01-01

    Nitrogen doped SnO 2 thin films (thickness ∼ 250 nm) were deposited at different substrate temperature by radio frequency (rf) sputtering method. Crystal structure, morphology and optical properties of these films were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS-NIR spectrophotometer, respectively. XRD measurement suggests that the film deposited at room temperature was amorphous in nature and films deposited at higher temperature were crystalline in nature. The film deposited at RT and 200 °C have transparency more than 90% in visible region but the film deposited at 400 °C has lesser transparency. Red shift was observed in the absorption edge may be due to decrease in ionicity due to the formation of the Sn-N bond

  16. Substrate Integrated Waveguide (SIW)-Based Wireless Temperature Sensor for Harsh Environments.

    Science.gov (United States)

    Tan, Qiulin; Guo, Yanjie; Zhang, Lei; Lu, Fei; Dong, Helei; Xiong, Jijun

    2018-05-03

    This paper presents a new wireless sensor structure based on a substrate integrated circular waveguide (SICW) for the temperature test in harsh environments. The sensor substrate material is 99% alumina ceramic, and the SICW structure is composed of upper and lower metal plates and a series of metal cylindrical sidewall vias. A rectangular aperture antenna integrated on the surface of the SICW resonator is used for electromagnetic wave transmission between the sensor and the external antenna. The resonant frequency of the temperature sensor decreases when the temperature increases, because the relative permittivity of the alumina ceramic increases with temperature. The temperature sensor presented in this paper was tested four times at a range of 30⁻1200 °C, and a broad band coplanar waveguide (CPW)-fed antenna was used as an interrogation antenna during the test process. The resonant frequency changed from 2.371 to 2.141 GHz as the temperature varied from 30 to 1200 °C, leading to a sensitivity of 0.197 MHz/°C. The quality factor of the sensor changed from 3444.6 to 35.028 when the temperature varied from 30 to 1000 °C.

  17. The effect of substrate temperature on the microstructural, electrical and optical properties of Sn-doped indium oxide thin films

    Science.gov (United States)

    Raoufi, Davood; Taherniya, Atefeh

    2015-06-01

    In this work, Sn doping In2O3 (ITO) thin films with a thickness of 200 nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures. The crystal structure of these films was studied by X-ray diffraction technique. The sheet resistance was measured by a four-point probe. Van der Pauw method was used to measure carrier density and mobility of ITO films. The optical transmittance spectra were recorded in the wavelength region of 300-800 nm. Scanning electron microscope (SEM) has been used for the surface morphology analysis. The prepared ITO films exhibited body-centered cubic (BCC) structure with preferred orientation of growth along the (2 2 2) crystalline plane. The grain size of the films increases by rising the substrate temperature. Transparency of the films, over the visible light region, is increased with increasing the substrate temperature. It is found that the electrical properties of ITO films are significantly affected by substrate temperature. The electrical resistivity decreases with increasing substrate temperature, whereas the carrier density and mobility are enhanced with an increase in substrate temperature. The evaluated values of energy band gap Eg for ITO films were increase from 3.84 eV to 3.91 eV with increasing the substrate temperatures from 200 °C to 500 °C. The SEM micrographs of the films revealed a homogeneous growth without perceptible cracks with particles which are well covered on the substrate.

  18. Effect of substrate temperature on ac conduction properties of amorphous and polycrystalline GaSe thin films

    International Nuclear Information System (INIS)

    Thamilselvan, M.; PremNazeer, K.; Mangalaraj, D.; Narayandass, Sa.K.; Yi, Junsin

    2004-01-01

    X-ray diffraction analysis of GaSe thin films used in the present investigation showed that the as-deposited and the one deposited at higher substrate temperature are in amorphous and polycrystalline state, respectively. The alternating current (ac) conduction properties of thermally evaporated films of GaSe were studied ex situ employing symmetric aluminium ohmic electrodes in the frequency range of 120-10 5 Hz at various temperature regimes. For the film deposited at elevated substrate temperature (573 K) the ac conductivity was found to increase with improvement of its crystalline structure. The ac conductivity (σ ac ) is found to be proportional to (ω s ) where s m calculated from ac conductivity measurements are compared with optical studies of our previous reported work for a-GaSe and poly-GaSe thin films. The distance between the localized centres (R), activation energy (ΔE σ ) and the number of sites per unit energy per unit volume N(E F ) at the Fermi level were evaluated for both a-GaSe and poly-GaSe thin films. Goswami and Goswami model has been invoked to explain the dependence of capacitance on frequency and temperature

  19. Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1−x Snx films on Si substrate

    International Nuclear Information System (INIS)

    Mahmodi, H; Hashim, M R

    2017-01-01

    In this study, Ge 1−x Sn x alloy films are co-sputtered on Si(100) substrates using RF magnetron sputtering at different substrate temperatures. Scanning electron micrographs, atomic force microscopy (AFM), Raman spectroscopy, and x-ray photoemission spectroscopy (XPS) are conducted to investigate the effect of substrate temperature on the structural and optical properties of grown GeSn alloy films. AFM results show that RMS surface roughness of the films increases from 1.02 to 2.30 nm when raising the substrate temperature. This increase could be due to Sn surface segregation that occurs when raising the substrate temperature. Raman spectra exhibits the lowest FWHM value and highest phonon intensity for a film sputtered at 140 °C. The spectra show that decreasing the deposition temperature to 140 °C improves the crystalline quality of the alloy films and increases nanocrystalline phase formation. The results of Raman spectra and XPS confirm Ge–Sn bond formation. The optoelectronic characteristics of fabricated metal-semiconductor-metal photodetectors on sputtered samples at room temperature (RT) and 140 °C are studied in the dark and under illumination. The sample sputtered at 140 °C performs better than the RT sputtered sample. (paper)

  20. Gas phase considerations for the deposition of thin film silicon solar cells by VHF-PECVD at low substrate temperatures

    NARCIS (Netherlands)

    Rath, J.K.; Verkerk, A.D.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

    2008-01-01

    Fabrication of thin film silicon solar cells on cheap plastics or paper-like substrate requires deposition process at very low substrate temperature, typically ≤ 100 °C. In a chemical vapor deposition process, low growth temperatures lead to materials with low density, high porosity, high disorder

  1. Enhanced adhesion between carbon nanotubes and substrate surfaces by low-temperature annealing

    International Nuclear Information System (INIS)

    Jang, Chi Woong; Byun, Young Tae; Woo, Deok Ha; Lee, Seok; Jhon, Young Min

    2012-01-01

    We enhanced the adhesion forces between carbon nanotubes (CNTs) and the substrate surface by using a low-temperature annealing process at 180 .deg. C for 300 s to protect the CNTs throughout the processes in photolithography for fabricating CNT-based devices, especially ion and bio sensors which are always exposed to liquids. The adhesion force was tested by using the adhesion durability test of soaking the fabricated CNT field effect transistors (CNT-FETs) in de-ionized water at room temperature for 300 s, and the adsorption quantities of CNTs were analyzed by using I - V measurements on the CNT-FETs before and after each adhesion durability test. The conductance change of the CNT-FETs fabricated with the annealing process was considerably decreased by more than a factor of 10 5 compared to that without the annealing process, implying that CNTs adhere much more strongly to the substrate after the annealing process.

  2. The Effect of Substrate Temperature on the Structural Properties of Spray Pyrolysed Lead Sulphide (PbS Thin Films

    Directory of Open Access Journals (Sweden)

    Mohammad G. Faraj

    2014-09-01

    Full Text Available Lead sulphide (PbS films were prepared by the chemical spray pyrolysis technique using a solution of Lead nitrate and thiourea. PbS films were deposited (prepared on glass substrate at varied temperature (250-350 oC. Effects of substrate temperature on the structural characteristics of the films were studied. The X-ray diffraction patterns’ results reveal that the all of PbS films have a face centered cubic structure. The X-ray diffraction study showed that irrespective of substrate temperature all the films exhibits a preferred orientation along the (200 plane. The degree of preferred orientation increased with the substrate temperature. It was observed that the increase of the substrate temperature increase the diffraction peak intensity of (200 plane which resulted in increase in grain size and good crystallinity of the films.

  3. Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Golshahi, S., E-mail: golshahi@iaurasht.ac.ir [Department of Physics, Rasht Branch, Islamic Azad University, Rasht (Iran, Islamic Republic of); Rozati, S.M. [Department of Physics, University of Guilan, 41335-1914 Rasht (Iran, Islamic Republic of); Botelho do Rego, A.M. [Centro de Quimica-Fisica Molecular and IN, Technical University of Lisbon, IST 1049-001 Lisboa (Portugal); Wang, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Elangovan, E.; Martins, R.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa (UNL), 2829-516 Caparica (Portugal)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Hall-effect measurement introduces the optimum temperature of 450 Degree-Sign C for fabricating p-type high quality ZnO films. Black-Right-Pointing-Pointer X-ray photoelectron spectroscopy (XPS) proved the nitrogen presence at the surface of doped ZnO thin films at all substrate temperatures. Black-Right-Pointing-Pointer Films prepared at lower substrate temperature (300 Degree-Sign C and 350 Degree-Sign C) own wider band gaps. Black-Right-Pointing-Pointer Surface roughness strongly is affected by substrate temperature variations. - Abstract: The effect of substrate temperature (T{sub s}) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T{sub s} was varied from 300 Degree-Sign C to 500 Degree-Sign C, with a step of 50 Degree-Sign C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 Degree-Sign C and 500 Degree-Sign C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 0 0) crystal plane, irrespective of the variation in T{sub s}. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 Degree-Sign C is the optimal T{sub s}. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T{sub s} until 400 Degree-Sign C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T{sub s}. The optical band gap calculated from the absorption edge showed that the films deposited with T{sub s} of 300 Degree-Sign C and 350 Degree-Sign C possess higher values than those deposited at higher T{sub s}.

  4. The influence of substrate temperature on properties of APS and VPS W coatings

    Czech Academy of Sciences Publication Activity Database

    Kovářík, O.; Haušild, P.; Siegl, J.; Chráska, Tomáš; Matějíček, Jiří; Pala, Zdeněk; Boulos, M.

    2015-01-01

    Roč. 268, April (2015), s. 7-14 ISSN 0257-8972 R&D Projects: GA ČR(CZ) GAP108/12/1872 Institutional support: RVO:61389021 Keywords : Plasma spray * Substrate temperature * W * Hardness * Coating modulus * Thermal conductivity Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 2.139, year: 2015 http://www.sciencedirect.com/science/article/pii/S0257897214006409#

  5. Low temperature thermocompression bonding between aligned carbon nanotubes and metallized substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, M X; Gan, Z Y; Liu, S [School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Song, X H, E-mail: chimish@163.com [Division of MOEMS, Wuhan National Lab for Optoelectronics, Wuhan 430074 (China)

    2011-08-26

    Vertically aligned carbon nanotube (VACNT) turf is proposed for use as an electrical and thermal contact material. For these applications, one route for circumventing the high temperatures required for VACNT growth using chemical vapor deposition (CVD) is used to grow firstly VACNTs on one substrate and then transfer them to other substrates. In this work, a nano thermocompression bonding technique between VACNTs and a metallized substrate is developed to allow dry mechanical transfer of the VACNTs. Unlike the diffusion bonding between two bulk materials, nano metal clusters have a high surface energy and the atoms are very active to form alloy with the contacted bulk metal material even at much lower temperatures, so nano thermocompression bonding can decrease the bonding temperature (150 deg. C) and pressure (1 MPa) and greatly shorten the bonding time from hours to 20 min. A debonding experiment shows that the bonding strength between VACNTs and the metallized layer is so high that a break is less likely to occur at the bonding interface.

  6. Temperature-dependent thermal conductivity of flexible yttria-stabilized zirconia substrate via 3ω technique

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Shivkant; Yarali, Milad; Mavrokefalos, Anastassios [Department of Mechanical Engineering, University of Houston, Houston, TX (United States); Shervin, Shahab [Materials Science and Engineering Program, University of Houston, Houston, TX (United States); Venkateswaran, Venkat; Olenick, Kathy; Olenick, John A. [ENrG Inc., Buffalo, NY (United States); Ryou, Jae-Hyun [Department of Mechanical Engineering, University of Houston, Houston, TX (United States); Materials Science and Engineering Program, University of Houston, Houston, TX (United States); Texas Center for Superconductivity, University of Houston (TcSUH), Houston, TX (United States)

    2017-10-15

    Thermal management in flexible electronic has proven to be challenging thereby limiting the development of flexible devices with high power densities. To truly enable the technological implementation of such devices, it is imperative to develop highly thermally conducting flexible substrates that are fully compatible with large-scale fabrication. Here, we present the thermal conductivity of state-of-the-art flexible yttria-stabilized zirconia (YSZ) substrates measured using the 3ω technique, which is already commercially manufactured via roll-to-roll technique. We observe that increasing the grain size increases the thermal conductivity of the flexible 3 mol.% YSZ, while the flexibility and transparency of the sample are hardly affected by the grain size enlargement. We exhibit thermal conductivity values of up to 4.16 Wm{sup -1}K {sup -1} that is at least 4 times higher than state-of-the-art polymeric flexible substrates. Phonon-hopping model (PHM) for granular material was used to fit the measured thermal conductivity and accurately define the thermal transport mechanism. Our results show that through grain size optimization, YSZ flexible substrates can be realized as flexible substrates, that pave new avenues for future novel application in flexible electronics through the utilization of both their ceramic structural flexibility and high heat dissipating capability. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Pulsed laser deposition of SiC thin films at medium substrate temperatures

    International Nuclear Information System (INIS)

    Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

    2008-01-01

    Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

  8. Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

    Science.gov (United States)

    Fang, F; Markwitz, A

    2009-05-01

    Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

  9. Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films

    International Nuclear Information System (INIS)

    Bacaksiz, E.; Basol, B.M.; Altunbas, M.; Novruzov, V.; Yanmaz, E.; Nezir, S.

    2007-01-01

    The effects of substrate temperature and post-deposition heat treatment steps on the morphology, structural, optical and electrical properties of thin film CdTe layers grown by vacuum evaporation were investigated. Scanning electron microscopy and X-ray diffraction (XRD) techniques were employed to study the structural changes. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of - 173 deg. C and - 73 deg. C. However, CdTe films produced at a substrate temperature of 27 deg. C had substantially larger grain size and clearly facetted morphology. Annealing at 200-400 deg. C in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 400 deg. C reduced faceting in all cases and initiated fusing between grains. XRD studies showed that this behavior after annealing at 400 deg. C coincided with an onset of a degree of randomization in the originally strong (111) texture of the as-grown layers. Optical band gap measurements showed sharpening of the band-edge upon annealing at 400 deg. C and a band gap value in the range of 1.46-1.49 eV. Resistivity measurements indicated that annealing at 400 deg. C in air forms a highly resistive compensated CdTe film. All results point to 400 deg. C to be a critical annealing temperature at which optical, structural and electrical properties of CdTe layers start to change

  10. Substrate temperature dependent structural, optical and electrical properties of amorphous InGaZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, X.F.; He, G., E-mail: ganghe01@issp.ac.cn; Gao, J.; Zhang, J.W.; Xiao, D.Q.; Jin, P.; Deng, B.

    2015-05-25

    Highlights: • Amorphous IGZO films are obtained by sputtering at various substrate temperatures. • Higher substrate temperatures lead to lower band gaps and high refractive index. • High temperature results in lower resistivity and larger charge carrier content. • Increased oxygen vacancies attributes to the reduced band gap. • Increased In content in IGZO films leads to the improved electrical properties. - Abstract: The effects of substrate temperature (T{sub s}) on the electrical and optical properties of amorphous InGaZnO thin films deposited by sputtering have been investigated. As T{sub s} increased from RT to 400 °C, all the films remained amorphous, the transmission in the visible region increased from 92.8% to 93.54%, and the band gap decreased from 3.42 eV to 3.31 eV. Based on Cauchy–Urbach model, the optical properties of all samples were analyzed by spectroscope ellipsometry (SE) and increase in refractive index has been detected with the increase in T{sub s}. Results of Hall measurement showed that substrate temperature have remarkable influence on the resistivity (ρ), carrier concentration (n), and carrier mobility (μ) of IGZO films. As T{sub s} increased from RT to 400 °C, ρ decreased from 46.6 to 0.24 Ω cm, and then increased to 1.11 Ω cm at T{sub s} of 400 °C, and n increase from 5.67 × 10{sup 15} to 7.33 × 10{sup 18} cm{sup −3}. Investigation of X-ray photoelectron spectroscopy (XPS) indicated that as T{sub s} increased, an O 1s component representing the oxygen vacancies increased in amount and that the intensity ratio of In/Ga increased but that of Zn/Ga decreased. The analysis suggests that the increase of oxygen vacancies could explain the increase in n and reduction in ρ and that the compositional change could explain the change of E{sub g}.

  11. Effect of substrate preheating temperature and coating thickness on residual stress in plasma sprayed hydroxyapatite coating

    International Nuclear Information System (INIS)

    Tang, Dapei

    2015-01-01

    A thermal-mechanical coupling model was developed based on thermal-elastic- plastic theory according the special process of plasma spraying Hydroxyapatite (HA) coating upon Ti-6Al-4V substrate. On the one hand, the classical Fourier transient heat conduction equation was modified by introducing the effect item of deformation on temperature, on the other hand, the Johnson-Cook model, suitable for high temperature and high strain rate conditions, was used as constitutive equation after considering temperature softening effect, strain hardening effect and strain rate reinforcement effect. Based on the above coupling model, the residual stress field within the HA coating was simulated by using finite element method (FEM). Meanwhile, the substrate preheating temperature and coating thickness on the influence of residual stress components were calculated, respectively. The failure modes of coating were also preliminary analyzed. In addition, in order to verify the reliability of calculation, the material removal measurement technique was applied to determine the residual stress of HA coating near the interface. Some important conclusions are obtained. (paper)

  12. Self-assembly of gas-phase synthesized magnesium nanoparticles on room temperature substrates

    International Nuclear Information System (INIS)

    Venturi, F; Calizzi, M; Pasquini, L; Bals, S; Perkisas, T

    2015-01-01

    Magnesium nanoparticles (NPs) with initial size in the 10–50 nm range were synthesized by inert gas condensation under helium flow and deposited on room temperature substrates. The morphology and crystal structure of the NPs ensemble were investigated as a function of the deposition time by complementary electron microscopy techniques, including high resolution imaging and chemical mapping. With increasing amount of material, strong coarsening phenomena were observed at room temperature: small NPs disappeared while large faceted NPs developed, leading to a 5-fold increase of the average NPs size within a few minutes. The extent of coarsening and the final morphology depended also on the nature of the substrate. Furthermore, large single-crystal NPs were seen to arise from the self-organization of primary NPs units, providing a mechanism for crystal growth. The dynamics of the self-assembly process involves the basic steps of NPs sticking, diffusion on substrate, coordinated rotation and attachment/coalescence. Key features are the surface energy anisotropy, reflected by the faceted shape of the NPs, and the low melting point of the material. The observed phenomena have strong implications in relation to the synthesis and stability of nanostructures based on Mg or other elements with similar features. (paper)

  13. Do circadian genes and ambient temperature affect substrate-borne signalling during Drosophila courtship?

    Directory of Open Access Journals (Sweden)

    Izarne Medina

    2015-11-01

    Full Text Available Courtship vibratory signals can be air-borne or substrate-borne. They convey distinct and species-specific information from one individual to its prospective partner. Here, we study the substrate-borne vibratory signals generated by the abdominal quivers of the Drosophila male during courtship; these vibrations travel through the ground towards courted females and coincide with female immobility. It is not known which physical parameters of the vibrations encode the information that is received by the females and induces them to pause. We examined the intervals between each vibratory pulse, a feature that was reported to carry information for animal communication. We were unable to find evidence of periodic variations in the lengths of these intervals, as has been reported for fly acoustical signals. Because it was suggested that the genes involved in the circadian clock may also regulate shorter rhythms, we search for effects of period on the interval lengths. Males that are mutant for the period gene produced vibrations with significantly altered interpulse intervals; also, treating wild type males with constant light results in similar alterations to the interpulse intervals. Our results suggest that both the clock and light/dark cycles have input into the interpulse intervals of these vibrations. We wondered if we could alter the interpulse intervals by other means, and found that ambient temperature also had a strong effect. However, behavioural analysis suggests that only extreme ambient temperatures can affect the strong correlation between female immobility and substrate-borne vibrations.

  14. Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

    KAUST Repository

    Stavarache, Ionel

    2017-07-21

    Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling of nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. It is reported here the significant progress introduced by synthesis procedure to the in-situ structuring of Ge nanocrystallites in SiO2 thin films by heating the substrate at low temperature, 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency of 850 %. This simple preparation approach brings an important contribution to the efort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

  15. Effect of Annealing and Operating Substrate Temperature on Methanol Gas Sensing Properties of SnO2 Thin Films

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2017-04-01

    Full Text Available SnO2 based sensing nano-material have been synthesized by simple chemical route using Stannic (IV chloride-pentahydrate (SnCl4.5H2O as precursor. The structural properties of the prepared SnO2 nano-particles annealed at different temperatures have been characterized by X-ray diffraction (XRD analysis. The XRD patterns showed pure bulk SnO2 with a tetragonal rutile structure in the nano-powders. By increasing the annealing temperatures, the size of crystals were seen to increase, the diffraction peaks were found narrower and the intensity was higher. SnO2 films prepared by spin coating the prepared nano-material solution was tested at different temperatures for methanol vapour and it showed that the film prepared from SnO2 powder annealed at 500 0C shows the higher sensitivity to methanol vapour at 150 0C substrate temperature with significantly low response and recovery time.

  16. High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

    Science.gov (United States)

    Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

    2012-06-01

    Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

  17. Temperature calibration procedure for thin film substrates for thermo-ellipsometric analysis using melting point standards

    International Nuclear Information System (INIS)

    Kappert, Emiel J.; Raaijmakers, Michiel J.T.; Ogieglo, Wojciech; Nijmeijer, Arian; Huiskes, Cindy; Benes, Nieck E.

    2015-01-01

    Highlights: • Facile temperature calibration method for thermo-ellipsometric analysis. • The melting point of thin films of indium, lead, zinc, and water can be detected by ellipsometry. • In-situ calibration of ellipsometry hot stage, without using any external equipment. • High-accuracy temperature calibration (±1.3 °C). - Abstract: Precise and accurate temperature control is pertinent to studying thermally activated processes in thin films. Here, we present a calibration method for the substrate–film interface temperature using spectroscopic ellipsometry. The method is adapted from temperature calibration methods that are well developed for thermogravimetric analysis and differential scanning calorimetry instruments, and is based on probing a transition temperature. Indium, lead, and zinc could be spread on a substrate, and the phase transition of these metals could be detected by a change in the Ψ signal of the ellipsometer. For water, the phase transition could be detected by a loss of signal intensity as a result of light scattering by the ice crystals. The combined approach allowed for construction of a linear calibration curve with an accuracy of 1.3 °C or lower over the full temperature range

  18. Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

    Science.gov (United States)

    Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

    2018-01-01

    Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

  19. Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition

    CERN Document Server

    Li Peng; Mazumder, J

    2003-01-01

    Room temperature deposition of biaxially textured yttria-stabilized zirconia (YSZ) films on amorphous glass substrates was successfully achieved by conventional pulsed-laser deposition. The influence of the surrounding gases, their pressure and the deposition time on the structure of the films was studied. A columnar growth process was revealed based on the experimental results. The grown biaxial texture appears as a kind of substrate independence, which makes it possible to fabricate in-plane aligned YSZ films on various substrates.

  20. Effect of substrate temperature on thermochromic vanadium dioxide thin films sputtered from vanadium target

    Science.gov (United States)

    Madiba, I. G.; Kotsedi, L.; Ngom, B. D.; Khanyile, B. S.; Maaza, M.

    2018-05-01

    Vanadium dioxide films have been known as the most promising thermochromic thin films for smart windows which self-control the solar radiation and heat transfer for energy saving, comfort in houses and automotives. Such an attractive technological application is due to the fact that vanadium dioxide crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature Tc of about 68 °C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated with the nature of the microstructure, stoichiometry and stresses related to the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of vanadium dioxide thin films synthesized by reactive radio frequency inverted cylindrical magnetron sputtering from vanadium target. The reports results are based on X-ray diffraction, Atomic force microscopy, and UV-Visible spectrophotometer. The average crystalline grain size of VO2 increases with the substrate temperature, inducing stress related phenomena within the films.

  1. Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

    Science.gov (United States)

    Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

    2017-10-01

    Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

  2. Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates

    International Nuclear Information System (INIS)

    Guillén, C; Herrero, J

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) films with thickness between 0.2 and 0.7 µm were deposited by sputtering at room temperature on glass and polyethylene terephthalate (PET) substrates. All films were polycrystalline, with crystallite size increasing and lattice distortion decreasing when the film thickness was increased. Besides, transmission in the near-infrared region is found to be decreasing and carrier concentration increasing when the film thickness was increased. For the same thickness, the lattice distortion is slightly lower and the carrier concentration higher for the layers grown on PET substrates. A direct relationship between the lattice distortion and the free carrier concentration has been established, applying to the films grown on glass and plastic substrates. By adjusting ITO coating thickness, sheet resistance below 15 Ω sq −1 and average visible transmittance about 90% have been achieved by sputtering at room temperature

  3. Development of low temperature RF magnetron sputtered ITO films on flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Muneshwar, T.P.; Varma, V.; Meshram, N; Soni, S.; Dusane, R.O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2010-09-15

    Indium tin oxide (ITO) is one of the important materials used as transparent conducting oxide (TCO) layer in thin film solar cells, digital displays and other similar applications. For applications involving flexible polymeric substrates, it is important that deposition of ITO is carried out at near room temperature. This requirement puts constraint on stoichiometry leading to undesired electrical and optical properties. Effect of oxygen partial pressure on ITO films deposited on flexible Kapton {sup registered} by the RF magnetron sputtering is reported in this paper. (author)

  4. The effect of substrate temperature on atomic layer deposited zinc tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Lindahl, Johan, E-mail: johan.lindahl@angstrom.uu.se; Hägglund, Carl, E-mail: carl.hagglund@angstrom.uu.se; Wätjen, J. Timo, E-mail: timo.watjen@angstrom.uu.se; Edoff, Marika, E-mail: marika.edoff@angstrom.uu.se; Törndahl, Tobias, E-mail: tobias.torndahl@angstrom.uu.se

    2015-07-01

    Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO{sub x} ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm{sup 3} in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap.

  5. The effect of substrate temperature on atomic layer deposited zinc tin oxide

    International Nuclear Information System (INIS)

    Lindahl, Johan; Hägglund, Carl; Wätjen, J. Timo; Edoff, Marika; Törndahl, Tobias

    2015-01-01

    Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO x ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm 3 in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap

  6. Effects of the substrate temperature on the properties of CuIn{sub 5}S{sub 8} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2011-10-01

    Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn{sub 5}S{sub 8} thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 5} cm{sup -1} at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 250 deg. C.

  7. Effects of the substrate temperature on the properties of CuIn5S8 thin films

    International Nuclear Information System (INIS)

    Gannouni, M.; Kanzari, M.

    2011-01-01

    Structural, optical and electrical properties of CuIn 5 S 8 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn 5 S 8 thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10 5 cm -1 at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn 5 S 8 thin film is an n-type semiconductor at 250 deg. C.

  8. Novel low-temperature sintering ceramic substrate based on indialite/cordierite glass ceramics

    Science.gov (United States)

    Varghese, Jobin; Vahera, Timo; Ohsato, Hitoshi; Iwata, Makoto; Jantunen, Heli

    2017-10-01

    In this paper, a novel low-temperature sintering substrate for low temperature co-fired ceramic applications based on indialite/cordierite glass ceramics with Bi2O3 as a sintering aid showing low permittivity (εr) and ultralow dielectric loss (tan δ) is described. The fine powder of indialite was prepared by the crystallization of cordierite glass at 1000 °C/1 h. The optimized sintering temperature was 900 °C with 10 wt % Bi2O3 addition. The relative density achieved was 97%, and εr and tan δ were 6.10 and 0.0001 at 1 MHz, respectively. The composition also showed a moderately low temperature coefficient of relative permittivity of 118 ppm/°C at 1 MHz. The obtained linear coefficient of thermal expansion was 3.5 ppm/°C in the measured temperature range of 100 to 600 °C. The decreasing trend in dielectric loss, the low relative permittivity at 1 MHz, and the low thermal expansion of the newly developed composition make it an ideal choice for radio frequency applications.

  9. Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

    Science.gov (United States)

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  10. Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

    Energy Technology Data Exchange (ETDEWEB)

    Lakshmanan, Saravanan; Rao, Subha Krishna [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India); Muthuvel, Manivel Raja [Defence Metallurgical Research Laboratory (DMRL), Hyderabad 500058 (India); Chandrasekaran, Gopalakrishnan [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India); Therese, Helen Annal, E-mail: helen.a@ktr.srmuniv.ac.in [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India)

    2017-08-01

    Highlights: • Ta/CoFeB(50 nm)/Ta thin films were deposited at various substrate temperatures (T{sub s}). • CoFeB films deposited at T{sub s} such as RT, 450 °C, 475 °C and 500 °C exhibited perpendicular coercivity. • CoFeB deposited at 475 °C displayed a higher coercivity of 315 Oe and a low M{sub s} of 169 emu/cc. • The enhanced crystallization of CoFeB at the Ta/CoFeB interface results in higher H{sub c} (⟂). - Abstract: Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (T{sub s}) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (M{sub s}) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

  11. Higher spin entanglement entropy at finite temperature with chemical potential

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Bin [Department of Physics and State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter,5 Yiheyuan Rd, Beijing 100871 (China); Center for High Energy Physics, Peking University,5 Yiheyuan Rd, Beijing 100871 (China); Beijing Center for Mathematics and Information Interdisciplinary Sciences, Beijing 100048 (China); Wu, Jie-qiang [Department of Physics and State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871 (China)

    2016-07-11

    It is generally believed that the semiclassical AdS{sub 3} higher spin gravity could be described by a two dimensional conformal field theory with W-algebra symmetry in the large central charge limit. In this paper, we study the single interval entanglement entropy on the torus in the CFT with a W{sub 3} deformation. More generally we develop the monodromy analysis to compute the two-point function of the light operators under a thermal density matrix with a W{sub 3} chemical potential to the leading order. Holographically we compute the probe action of the Wilson line in the background of the spin-3 black hole with a chemical potential. We find exact agreement.

  12. Effect of the substrate temperature on the microstructure and texture of Mg90Zr10 (at.%) films deposited by sputtering

    International Nuclear Information System (INIS)

    Garces, Gerardo; Landais, Stephan; Adeva, Paloma

    2006-01-01

    The microstructure of Mg 90 Zr 10 (at.%) films obtained by sputtering onto copper substrate at three different temperatures (180, 320 and 350 deg. C) has been studied. Films exhibited an intense (0 0 0 1) basal plane fibre texture with the fibre axis parallel to the growth direction. Their microstructure consisted of columnar grains growing from the copper substrate to the free surface which is typical of the zone II of the Movchan and Demchishin zone model developed for PVD materials. Nevertheless, the microstructure of films was dependent on the substrate temperature. The grain diameter increased as the substrate temperature was increased. Moreover, the dislocation density inside the grains as well as that piled-up forming sub-grain boundaries decreased as the deposition temperature increased. Although the film growth in zone II is controlled by surface diffusion the larger surface mobility of the atoms as the substrate temperature increased led to changes in the solubility of zirconium. At low substrate temperatures all zirconium was in solid solution. However, at 350 deg. C the formation of small zirconium particles occurred at grain boundaries

  13. Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

    Science.gov (United States)

    Lakshmanan, Saravanan; Rao, Subha Krishna; Muthuvel, Manivel Raja; Chandrasekaran, Gopalakrishnan; Therese, Helen Annal

    2017-08-01

    Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (Ts) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (Ms) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

  14. Dormancy overcoming, temperatures and substrates on germination of Mimosa tenuiflora Willd seeds

    Directory of Open Access Journals (Sweden)

    Clarisse Pereira Benedito

    2017-03-01

    Full Text Available Mimosa tenuiflora Willd., popularly known as jurema-preta, is an arboreal species of great importance for the brazilian Northeast due to its uses as a medicinal plant and in the restoration of degraded soils. No information is available in the Rules for Seed Analysis and the Instructions for Seed Analysis of Forest Species regarding ideal conditions for of this species. Thus, this study aimed at evaluating the influence of pre-germination treatments, in addition to verifying the germination performance at different temperatures and in different substrates. In both experiments, four replicates of 25 seeds were used for each treatment. In experiment I, seeds were submitted to the following methods for overcoming dormancy: witness - Intact seeds (T1 immersion in water at 100 °C for 1 (T2, 2 (T3, 3 (T4, 4 (T5, 5 (T6 and 6 min (T7, immersion in concentrated sulfuric acid for 1 (T8, 4 (T9, 7 (T10, 10 (T11 and 13 min (T12, scarification on sandpaper n° 80 (T13 and lopping in the region opposite the micropyle (T14. In experiment II, seed germination was evaluated in four types of substrates: between sand, paper on, paper roll and between vermiculite and at six different temperatures: 20, 25, 30, 35, 40 °C and alternating between 20 and 30 °C. Immersion in hot water for 1, 2, 3, 4, 5 and 6 min, sulfuric acid treatment for 10 and 13 min, sand paper and lopping were the most appropriate treatments to overcome seed dormancy. The seed germination of M. Tenuiflora should be carried out at 25 °C on paper roll substrate.

  15. Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings

    Science.gov (United States)

    Vajente, G.; Birney, R.; Ananyeva, A.; Angelova, S.; Asselin, R.; Baloukas, B.; Bassiri, R.; Billingsley, G.; Fejer, M. M.; Gibson, D.; Godbout, L. J.; Gustafson, E.; Heptonstall, A.; Hough, J.; MacFoy, S.; Markosyan, A.; Martin, I. W.; Martinu, L.; Murray, P. G.; Penn, S.; Roorda, S.; Rowan, S.; Schiettekatte, F.; Shink, R.; Torrie, C.; Vine, D.; Reid, S.; Adhikari, R. X.

    2018-04-01

    Brownian thermal noise in dielectric multilayer coatings limits the sensitivity of current and future interferometric gravitational wave detectors. In this work we explore the possibility of improving the mechanical losses of tantala, often used as the high refractive index material, by depositing it on a substrate held at elevated temperature. Promising results have been previously obtained with this technique when applied to amorphous silicon. We show that depositing tantala on a hot substrate reduced the mechanical losses of the as-deposited coating, but subsequent thermal treatments had a larger impact, as they reduced the losses to levels previously reported in the literature. We also show that the reduction in mechanical loss correlates with increased medium range order in the atomic structure of the coatings using x-ray diffraction and Raman spectroscopy. Finally, a discussion is included on our results, which shows that the elevated temperature deposition of pure tantala coatings does not appear to reduce mechanical loss in a similar way to that reported in the literature for amorphous silicon; and we suggest possible future research directions.

  16. Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

    International Nuclear Information System (INIS)

    Lee, Sanghun; Cheon, Dongkeun; Kim, Won-Jeong; Ham, Moon-Ho; Lee, Woong

    2012-01-01

    Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were deposited on glass substrates by pulsed DC magnetron sputtering with varying sputtering power and substrate temperature while fixing the Ga concentration in the sputtering target. The application of higher sputtering power by pulsed DC magnetrons sputtering at a moderate temperature of 423 K results in increased carrier concentration and mobility which accompanied improved doping efficiency and crystalline quality. Substrate temperature was found to be the more dominant parameter in controlling the electrical properties and crystallinity, while the sputtering power played synergistic auxiliary roles. Electrical and optical properties of the GZO TCO films fulfilled requirements for transparent electrodes, despite relatively low substrate temperature (423 K) and small thickness (100 nm). In an attempt to improve the electrical properties of the GZO films by hydrogen-treatment, it was observed that the substitutional Ga plays the complex role of carrier generator as donor and carrier suppressor deactivating the oxygen vacancy simultaneously, which would complicate the property improvement by increasing doping efficiency.

  17. Substrate effects on photoluminescence and low temperature phase transition of methylammonium lead iodide hybrid perovskite thin films

    Science.gov (United States)

    Shojaee, S. A.; Harriman, T. A.; Han, G. S.; Lee, J.-K.; Lucca, D. A.

    2017-07-01

    We examine the effects of substrates on the low temperature photoluminescence (PL) spectra and phase transition in methylammonium lead iodide hybrid perovskite (CH3NH3PbI3) thin films. Structural characterization at room temperature with X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy indicated that while the chemical structure of films deposited on glass and quartz was similar, the glass substrate induced strain in the perovskite films and suppressed the grain growth. The luminescence response and phase transition of the perovskite thin films were studied by PL spectroscopy. The induced strain was found to affect both the room temperature and low temperature PL spectra of the hybrid perovskite films. In addition, it was found that the effects of the glass substrate inhibited a tetragonal to orthorhombic phase transition such that it occurred at lower temperatures.

  18. Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

    Science.gov (United States)

    Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

    Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

  19. Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break

    Energy Technology Data Exchange (ETDEWEB)

    Piallat, Fabien, E-mail: fabien.piallat@gmail.com [STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles (France); CEA, LETI, Campus Minatec, F-38054 Grenoble (France); LTM-CNRS, 17 rue des Martyrs, 38054 Grenoble (France); Gassilloud, Remy [CEA, LETI, Campus Minatec, F-38054 Grenoble (France); Caubet, Pierre [STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles (France); Vallée, Christophe [LTM-CNRS, 17 rue des Martyrs, 38054 Grenoble (France)

    2016-09-15

    Due to the reduction of the thickness of the layers used in the advanced technology nodes, there is a growing importance of the surface phenomena in the definition of the general properties of the materials. One of the least controlled and understood phenomenon is the oxidation of metals after deposition, at the vacuum break. In this study, the influence of the sample temperature at vacuum break on the oxidation level of TiN deposited by metalorganic chemical vapor deposition is investigated. TiN resistivity appears to be lower for samples which underwent vacuum break at high temperature. Using X-ray photoelectron spectrometry analysis, this change is correlated to the higher oxidation of the TiN layer. Moreover, angle resolved XPS analysis reveals that higher is the temperature at the vacuum break, higher is the surface oxidation of the sample. This surface oxidation is in turn limiting the diffusion of oxygen in the volume of the layer. Additionally, evolution of TiN layers resistivity was monitored in time and it shows that resistivity increases until a plateau is reached after about 10 days, with the lowest temperature at vacuum break resulting in the highest increase, i.e., the resistivity of the sample released to atmosphere at high temperature increased by a factor 1.7 whereas the resistivity of the sample cooled down under vacuum temperature increased by a factor 2.7.

  20. Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

    Science.gov (United States)

    He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

    2013-10-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

  1. Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

    Science.gov (United States)

    Riascos, H.; Duque, J. S.; Orozco, S.

    2017-01-01

    ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

  2. The effects of beam energy and substrate temperature on the tribological properties of hard-carbon films on aluminum

    International Nuclear Information System (INIS)

    Wei, R.; Wilbur, P.J.; Erdemir, A.; Kustas, F.M.

    1992-01-01

    Hard-carbon films were applied on flat 6061-T6 aluminum substrates using a broad-beam ion source operating on methane and producing carbonaceous ions with energies that varied from 250 to 1050 eV. Films were evaluated using a reciprocating alumina ball-on-flat sliding wear tester operating in an ambient air test environment. The films facilitated substantial reductions in friction coefficients to 0.08-0.2 from 0.4-0.7 for uncoated aluminum. At a sufficiently high normal load, the films failed and friction coefficients increased to the higher range. The best film caused this critical normal load to increase from less than 0.1 N for untreated aluminum to greater than 30 N. A near-optimal beam ion energy (450 eV) was identified for good quality films. At lower energies (e.g. 250 eV) films were discontinuous, while at higher energies (e.g. 1050 eV) high sputter rates limited film growth. When an aluminum flat was held at low temperature during processing, the films were smooth and adhered well, but they became rougher and adhered poorly as the temperature was increased above approximately 300degC. (orig.)

  3. Effect of substrate temperature and gas flow ratio on the nanocomposite TiAlBN coating

    Energy Technology Data Exchange (ETDEWEB)

    Rosli, Z. M., E-mail: azmr@utem.edu.my; Kwan, W. L., E-mail: kwailoon86@gmail.com; Juoi, J. M., E-mail: jariah@utem.edu.my [Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka (Malaysia)

    2016-07-19

    Nanocomposite TiAlBN (nc-TiAlBN) coatings were successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (R{sub N}), and substrate temperature (T{sub S}). All coatings were deposited on AISI 316 substrates using single Ti-Al-BN hot-pressed disc as a target. The grain size, phases, and chemical composition of the coatings were evaluated using glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). Results showed that the grains size of the deposited nc-TiAlBN coatings were in the range of 3.5 to 5.7 nm and reached a nitride saturation state as early as 15 % R{sub N}. As the nitrogen concentration decreases, boron concentration increased from 9 at.% to 16.17 at.%. and thus, increase the TiB{sub 2} phase within the coatings. The T{sub S}, however, showed no significant effect either on the crystallographic structure, grain size, or in the chemical composition of the deposited nc-TiAlBN coating.

  4. Effect of substrate temperature and gas flow ratio on the nanocomposite TiAlBN coating

    International Nuclear Information System (INIS)

    Rosli, Z. M.; Kwan, W. L.; Juoi, J. M.

    2016-01-01

    Nanocomposite TiAlBN (nc-TiAlBN) coatings were successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (R_N), and substrate temperature (T_S). All coatings were deposited on AISI 316 substrates using single Ti-Al-BN hot-pressed disc as a target. The grain size, phases, and chemical composition of the coatings were evaluated using glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). Results showed that the grains size of the deposited nc-TiAlBN coatings were in the range of 3.5 to 5.7 nm and reached a nitride saturation state as early as 15 % R_N. As the nitrogen concentration decreases, boron concentration increased from 9 at.% to 16.17 at.%. and thus, increase the TiB_2 phase within the coatings. The T_S, however, showed no significant effect either on the crystallographic structure, grain size, or in the chemical composition of the deposited nc-TiAlBN coating.

  5. Substrate temperature effects on reactively sputtered Cr2O3/n-Si heterojunctions

    International Nuclear Information System (INIS)

    Ocak, Yusuf Selim; Genisel, Mustafa Fatih; Issa, Ali Ahmed; Tombak, Ahmet; Kilicoglu, Tahsin

    2016-01-01

    To see the effects of substrate temperature on Cr 2 O 3 /n-Si heterojunctions, Cr 2 O 3 thin films were formed on n-Si and glass substrates at 40, 150 and 250 °C by radio frequency (RF) reactive sputtering technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr 2 O 3 /n-Si thin films were analyzed using UV-vis data. The band gaps of the films were compared. The electrical properties of Cr 2 O 3 /n-Si heterojunction were tested by their current voltage ( I-V ) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr 2 O 3 thin film at 250 °C gave better rectification. The characteristic electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage ( C-V ) data were compared with the one calculated from I-V measurements. (paper)

  6. Study on the paper substrate room temperature phosphorescence of theobromine, caffeine and theophylline and analytical application

    Science.gov (United States)

    Chuan, Dong; Yan-Li, Wei; Shao-Min, Shuang

    2003-05-01

    Paper substrate room temperature phosphorescence (RTP) of theobromine (TB), caffeine (CF) and theophylline (TP) were investigated. The method is based on fast speed quantitative filter paper as substrate and KI-NaAc as heavy atom perturber. Various factors affecting their RTP were discussed in detail. Under the optimum experimental conditions, the linear dynamic range, limit of detection (LOD), and relative standard deviation (R.S.D.) were 14.41˜576.54 ng per spot, 1.14 ng per spot, 4.8% for TB, 5.44˜699.08 ng per spot, 0.78 ng per spot, 1.56% for CF, 7.21˜360.34 ng per spot, 1.80 ng per spot, 3.80% for TP, respectively. The first analytical application for the determination of these compounds was developed. The recovery of standard samples added to commercial products chocolate, tea, coffee and aminophylline is in the range 92.80-106.08%. The proposed method was successfully applied to real sample analysis without separation.

  7. Direct synthesis of multi-layer graphene film on various substrates by microwave plasma at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hyun Jae [Plasma Technology Research Center, 814-2 Osickdo-dong (SGFEZ), Gunsan, Jeollabuk-do 573-540 (Korea, Republic of); Ahn, Byung Wook; Kim, Tae Yoo; Lee, Jung Woo [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Yong Ho; Choi, Yong Sup [Plasma Technology Research Center, 814-2 Osickdo-dong (SGFEZ), Gunsan, Jeollabuk-do 573-540 (Korea, Republic of); Song, Young Il, E-mail: physein01@skku.edu [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Su Jeong, E-mail: suhsj@skku.edu [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-07-31

    We introduce a possible route for vertically standing multi-layer graphene films (VMGs) on various substrates at low temperature by electron cyclone resonance microwave plasma. VMG films on various substrates, including copper sheet, glass and silicon oxide wafer, were analyzed by studying their structural, electrical, and optical properties. The density and temperature of plasma were measured using Cylindrical Langmuir probe analysis. The morphologies and microstructures of multi-layer graphene were characterized using field emission scattering electron microscope, high resolution transmission electron microscope, and Raman spectra measurement. The VMGs on different substrates at the same experimental conditions synthesized the wrinkled VMGs with different heights. In addition, the transmittance and electrical resistance were measured using ultra-violet visible near-infrared spectroscopy and 4 probe point surface resistance measurement. The VMGs on glass substrate obtained a transmittance of 68.8% and sheet resistance of 796 Ω/square, whereas the VMGs on SiO{sub 2} wafer substrate showed good sheet resistance of 395 Ω/square and 278 Ω/square. The results presented herein demonstrate a simple method of synthesizing of VMGs on various substrates at low temperature for mass production, in which the VMGs can be used in a wide range of application fields for energy storage, catalysis, and field emission due to their unique orientation. - Highlights: • We present for synthesis method of graphene at low temperature on various substrates. • We grow the graphene films at low temperature under of 432 °C. • Structural information of graphene films were studied upon Raman spectroscopy. • Inter-layer spacing of vertically standing graphene relies on synthesis time. • We measured a transmittance and a resistance for graphene films on difference substrate.

  8. Heat-transfer dynamics during cryogen spray cooling of substrate at different initial temperatures

    International Nuclear Information System (INIS)

    Jia Wangcun; Aguilar, Guillermo; Wang Guoxiang; Nelson, J Stuart

    2004-01-01

    Cryogen spray cooling (CSC) is used to minimize the risk of epidermal damage during laser dermatologic therapy. However, the dominant mechanisms of heat transfer during the transient cooling process are incompletely understood. The objective of this study is to elucidate the physics of CSC by measuring the effect of initial substrate temperature (T 0 ) on cooling dynamics. Cryogen was delivered by a straight-tube nozzle onto a skin phantom. A fast-response thermocouple was used to record the phantom temperature changes before, during and after the cryogen spray. Surface heat fluxes (q'') and heat-transfer coefficients (h) were computed using an inverse heat conduction algorithm. The maximum surface heat flux (q'' max ) was observed to increase with T 0 . The surface temperature corresponding to q'' max also increased with T 0 but the latter has no significant effect on h. It is concluded that heat transfer between the cryogen spray and skin phantom remains in the nucleate boiling region even if T 0 is 80 0 C

  9. Remote and direct plasma regions for low-temperature growth of carbon nanotubes on glass substrates for display applications

    International Nuclear Information System (INIS)

    Tabatabaei, M K; Ghafouri fard, H; Koohsorkhi, J; Khatami, S; Mohajerzadeh, S

    2011-01-01

    A novel method for growing carbon nanotubes (CNTs) on glass substrates is introduced in this study. A two-stage plasma was used to achieve low-temperature and vertically aligned CNTs. Ni deposited on indium tin oxide/glass substrate was used as the catalyst and hydrogen and acetylene were used as gas feeds. In this investigation a new technique was developed to grow vertically aligned CNTs at temperatures below 400 deg. C while CNT growth by plasma-enhanced chemical vapour deposition required high temperatures. Low-temperature growth of vertically aligned CNTs was suitable for the fabrication of micro-lens and self-oriented displays on glass substrates. Also, we have reported a new configuration for CNT-based display by means of controlling the refractive index of liquid crystal around the CNT by applying a proper voltage to the top and bottom array.

  10. Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

    International Nuclear Information System (INIS)

    Ding Xingwei; Yan Jinliang; Li Ting; Zhang Liying

    2012-01-01

    Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO 2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO 2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO 2 /ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO 2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

  11. Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

    Science.gov (United States)

    Ding, Xingwei; Yan, Jinliang; Li, Ting; Zhang, Liying

    2012-01-01

    Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO2/ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

  12. Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

    Science.gov (United States)

    Zhan, Peng; Wang, Weipeng; Xie, Zheng; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

    2012-07-01

    Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ˜0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ˜0.44 emu/g (on quartz) to ˜1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.

  13. Room-temperature deposition of diamond-like carbon field emitter on flexible substrates

    International Nuclear Information System (INIS)

    Chen, H.; Iliev, M.N.; Liu, J.R.; Ma, K.B.; Chu, W.-K.; Badi, N.; Bensaoula, A.; Svedberg, E.B.

    2006-01-01

    Room-temperature fabrication of diamond-like carbon electron field emitters on flexible polyimide substrate is reported. These thin film field emitters are made using an Ar gas cluster ion beam assisted C 6 vapor deposition method. The bond structure of the as-deposited diamond-like carbon film was studied using Raman spectroscopy. The field emission characteristics of the deposited films were also measured. Electron current densities over 15 mA/cm 2 have been recorded under an electrical field of about 65 V/μm. These diamond-like carbon field emitters are easy and inexpensive to fabricate. The results are promising for flexible field-emission fabrication without the need of complex patterning and tip shaping as compared to the Spindt-type field emitters

  14. Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

    International Nuclear Information System (INIS)

    Xiao, Yu; Gao, Fangyuan; Dong, Guobo; Guo, Tingting; Liu, Qirong; Ye, Di; Diao, Xungang

    2014-01-01

    Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Ω/square, a lowest resistivity of 3.61 × 10 −4 Ω cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (μ) and carrier concentration (n) was interpreted by a functional relation of μ ∼ n −0.127 , which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. - Highlights: • ITO thin films were grown on PET substrates by DC facing target sputtering system. • All the films were prepared at room temperature and exhibited amorphous structure. • Highly conductive and transparent ITO thin films were obtained. • The dominant ionized donor scattering mechanism was suggested

  15. Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Yu [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Gao, Fangyuan, E-mail: gaofangyuan@buaa.edu.cn [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Dong, Guobo; Guo, Tingting; Liu, Qirong [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Ye, Di [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100191 (China); Diao, Xungang [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China)

    2014-04-01

    Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Ω/square, a lowest resistivity of 3.61 × 10{sup −4} Ω cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (μ) and carrier concentration (n) was interpreted by a functional relation of μ ∼ n{sup −0.127}, which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. - Highlights: • ITO thin films were grown on PET substrates by DC facing target sputtering system. • All the films were prepared at room temperature and exhibited amorphous structure. • Highly conductive and transparent ITO thin films were obtained. • The dominant ionized donor scattering mechanism was suggested.

  16. Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission

    International Nuclear Information System (INIS)

    Liang, Y Y; Yoon, S F; Loke, W K; Ngo, C Y; Fitzgerald, E A

    2012-01-01

    GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is promising to integrate the InAs/InGaAs/GaAs QDs on Si with the use of germanium-on-insulator-on-silicon (GeOI) substrates, reported results exhibit bimodal QD sizes and double emission peaks, i.e. unsatisfactory for realistic applications. In this paper, we showed that with an optimized GaAs buffer, single-peak 1.33 µm room-temperature emission can be obtained from InAs/InGaAs/GaAs QDs on GeOI substrates. (paper)

  17. F-doped SnO2 thin films grown on flexible substrates at low temperatures by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, H.; Auyeung, R.C.Y.; Pique, A.

    2011-01-01

    Fluorine-doped tin oxide (SnO 2 :F) films were deposited on polyethersulfone plastic substrates by pulsed laser deposition. The electrical and optical properties of the SnO 2 :F films were investigated as a function of deposition conditions such as substrate temperature and oxygen partial pressure during deposition. High quality SnO 2 :F films were achieved under an optimum oxygen pressure range (7.4-8 Pa) at relatively low growth temperatures (25-150 deg. C). As-deposited films exhibited low electrical resistivities of 1-7 mΩ-cm, high optical transmittance of 80-90% in the visible range, and optical band-gap energies of 3.87-3.96 eV. Atomic force microscopy measurements revealed a reduced root mean square surface roughness of the SnO 2 :F films compared to that of the bare substrates indicating planarization of the underlying substrate.

  18. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  19. Antioxidant Potential of Lingzhi or Reishi Medicinal Mushroom, Ganoderma lucidum (Higher Basidiomycetes) Cultivated on Artocarpus heterophyllus Sawdust Substrate in India.

    Science.gov (United States)

    Rani, P; Lal, Merlin Rajesh; Maheshwari, Uma; Krishnan, Sreeram

    2015-01-01

    The artificial cultivation of Ganoderma lucidum (MTCC1039) using Artocarpus heterophyllus as sawdust substrate was optimized and free radical scavenging activities of the generated fruiting bodies were investigated. The choice of A. heterophyllus as substrate was due to its easy availability in South India. Sawdust supplemented with dextrose medium yielded better spawn hyphae and early fruiting body initiation (15 days). The biological yield obtained was 42.06 ± 2.14 g/packet and the biological efficiency was 8.41 ± 0.48%. Both aqueous and methanolic extracts of fruiting body were analyzed for radical scavenging activity. Methanolic extract showed maximum scavenging activity for 1,1-diphenyl-2-picrylhydrazyl (IC50 = 290 μg/ml) and 2,2'-azino-bis(3-ethylbenzothiazoline- 6-sulphonic acid (IC50 = 580 μg/ml), whereas aqueous extract had better scavenging for ferric reducing antioxidant power (IC50 = 5 μg/ml). Total phenolic content and total antioxidant capacity were significantly higher in methanolic extract (p < 0.01). A positive correlation existed between the phenolic content and antioxidant activity. Our results indicated that fruiting bodies of G. lucidum cultivated in sawdust medium possess antioxidant property, which can be exploited for therapeutic application.

  20. Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate

    International Nuclear Information System (INIS)

    Rodriguez, J. B.; Cerutti, L.; Grech, P.; Tournie, E.

    2009-01-01

    We report on a GaSb-based type-I laser structure grown by molecular beam epitaxy on a (001) silicon substrate. A thin AlSb nucleation layer followed by a 1 μm thick GaSb buffer layer was used to accommodate the very large lattice mismatch existing with the silicon substrate. Processed devices with mesa geometry exhibited laser operation in pulsed mode with a duty cycle up to 10% at room temperature

  1. In situ observation of carbon nanotube layer growth on microbolometers with substrates at ambient temperature

    Science.gov (United States)

    Svatoš, Vojtěch; Gablech, Imrich; Ilic, B. Robert; Pekárek, Jan; Neužil, Pavel

    2018-03-01

    Carbon nanotubes (CNTs) have near unity infrared (IR) absorption efficiency, making them extremely attractive for IR imaging devices. Since CNT growth occurs at elevated temperatures, the integration of CNTs with IR imaging devices is challenging and has not yet been achieved. Here, we show a strategy for implementing CNTs as IR absorbers using differential heating of thermally isolated microbolometer membranes in a C2H2 environment. During the process, CNTs were catalytically grown on the surface of a locally heated membrane, while the substrate was maintained at an ambient temperature. CNT growth was monitored in situ in real time using optical microscopy. During growth, we measured the intensity of light emission and the reflected light from the heated microbolometer. Our measurements of bolometer performance show that the CNT layer on the surface of the microbolometer membrane increases the IR response by a factor of (2.3 ± 0.1) (mean ± one standard deviation of the least-squares fit parameters). This work opens the door to integrating near unity IR absorption, CNT-based, IR absorbers with hybrid complementary metal-oxide-semiconductor focal plane array architectures.

  2. Effect of substrate temperature on corrosion performance of nitrogen doped amorphous carbon thin films in NaCl solution

    Energy Technology Data Exchange (ETDEWEB)

    Khun, N.W. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, E., E-mail: MEJLiu@ntu.edu.s [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2009-07-01

    Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on p-Si substrates by DC magnetron sputtering at varying substrate temperature from room temperature (RT) to 300 {sup o}C. The bonding structure, surface morphology and adhesion strength of the a-C:N films were investigated by using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch testing. The corrosion behavior of the a-C:N films was evaluated by potentiodynamic polarization test in a 0.6 M NaCl solution. The results indicated that the corrosion resistance of the films depended on the sp{sup 3}-bonded cross-link structure that was significantly affected by the substrate temperature.

  3. Effect of substrate temperature on corrosion performance of nitrogen doped amorphous carbon thin films in NaCl solution

    International Nuclear Information System (INIS)

    Khun, N.W.; Liu, E.

    2009-01-01

    Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on p-Si substrates by DC magnetron sputtering at varying substrate temperature from room temperature (RT) to 300 o C. The bonding structure, surface morphology and adhesion strength of the a-C:N films were investigated by using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch testing. The corrosion behavior of the a-C:N films was evaluated by potentiodynamic polarization test in a 0.6 M NaCl solution. The results indicated that the corrosion resistance of the films depended on the sp 3 -bonded cross-link structure that was significantly affected by the substrate temperature.

  4. Effects of substrate temperature on the structure and mechanical properties of (TiVCrZrHf)N coatings

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Shih-Chang [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Chang, Zue-Chin [Department of Mechanical Engineering, National Chin-Yi University of Technology, Taichung 411, Taiwan (China); Tsai, Du-Cheng [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Lin, Yi-Chen; Sung, Huan-Shin [Department of Mechanical Engineering, National Chin-Yi University of Technology, Taichung 411, Taiwan (China); Deng, Min-Jen [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Department of Optometry, Jen-Teh Junior College of Medicine, Nursing and Management, Miaoli County 356, Taiwan (China); Shieu, Fuh-Sheng, E-mail: fsshieu@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

    2011-06-15

    The present paper reports the influence of growth conditions on the characteristics of (TiVCrZrHf)N films prepared by rf reactive magnetron sputtering at various substrate temperatures. The nitrogen content is observed to decrease with increasing substrate temperature. The X-ray diffraction results indicate that all (TiVCrZrHf)N films are simple face centered cubic (FCC) structures. Initially, there is an obvious decrease followed by an increase in grain size with the increase in substrate temperature. The lower part of the microstructure has an amorphous structure. A nano grain structure (size {approx}1 nm) with a random orientation is also observed above the amorphous structure. The fully dense columnar structure with an fcc crystal phase then starts to develop. Extreme hardness of around 48 GPa is obtained in the present alloy design.

  5. Effects of substrate temperature on the structure and mechanical properties of (TiVCrZrHf)N coatings

    International Nuclear Information System (INIS)

    Liang, Shih-Chang; Chang, Zue-Chin; Tsai, Du-Cheng; Lin, Yi-Chen; Sung, Huan-Shin; Deng, Min-Jen; Shieu, Fuh-Sheng

    2011-01-01

    The present paper reports the influence of growth conditions on the characteristics of (TiVCrZrHf)N films prepared by rf reactive magnetron sputtering at various substrate temperatures. The nitrogen content is observed to decrease with increasing substrate temperature. The X-ray diffraction results indicate that all (TiVCrZrHf)N films are simple face centered cubic (FCC) structures. Initially, there is an obvious decrease followed by an increase in grain size with the increase in substrate temperature. The lower part of the microstructure has an amorphous structure. A nano grain structure (size ∼1 nm) with a random orientation is also observed above the amorphous structure. The fully dense columnar structure with an fcc crystal phase then starts to develop. Extreme hardness of around 48 GPa is obtained in the present alloy design.

  6. An investigation of the adhesion of gold contacts on silicon detectors of nuclear radiation as a function of the substrate temperature

    International Nuclear Information System (INIS)

    Gumnerova, L.; Mikhajlov, M.

    1981-01-01

    The dependence of the adhesion of a thin gold film to an etched single crystal silicon substrate temperature and duration of aging is investigated. N-type silicon samples of 3Ω/m specific resistivity and 0.002 m thick are used. These samples are lapped by a series of abrasive powders with a grain diameter of 40 μm to 7 μm and etched by a 1:3:0.5 (HF:HNO 3 :CH 3 COOH) etching agent. The principal schemes of the evaporation equipment and the adhesion testing device are presented. Gold contacts are deposited at substrate temperature ranging from room temperature up to 433 K. The obtained gold films on the silicon substrates are tested and the results are given. It is seen that the adhesion of the gold film to the sample heated up to 373 K is about 50 times higher than the adhesion of the fresh unheated sample. The comparison between samples subjected to aging shows that the adhesion of heated samples is about 10 times higher and does not change essentially after ageing. Some possible explanations of this phenomena are given

  7. Production characteristics of the "higher plants-soil-like substrate" system as an element of the bioregenerative life support system

    Science.gov (United States)

    Velichko, V. V.; Tikhomirov, A. A.; Ushakova, S. A.; Tikhomirova, N. A.; Shihov, V. N.; Tirranen, L. S.; Gribovskaya, I. A.

    2013-01-01

    The study addresses the possibility of long-duration operation of a higher plant conveyor, using a soil-like substrate (SLS) as the root zone. Chufa (Cyperus esculentus L.), radish (Raphanus sativus L.), and lettuce (Lactuca sativa L.) were used as study material. A chufa community consisting of 4 age groups and radish and lettuce communities consisting of 2 age groups were irrigated with a nutrient solution, which contained mineral elements extracted from the SLS. After each harvest, inedible biomass of the harvested plants and inedible biomasses of wheat and saltwort were added to the SLS. The amounts of the inedible biomasses of wheat and saltwort to be added to the SLS were determined based on the nitrogen content of the edible mass of harvested plants. CO2 concentration in the growth chamber was maintained within the range of 1100-1700 ppm. The results of the study show that higher plants can be grown quite successfully using the proposed process of plant waste utilization in the SLS. The addition of chufa inedible biomass to the SLS resulted in species-specific inhibition of growth of both cultivated crops and microorganisms in the "higher plants - SLS" system. There were certain differences between the amounts of some mineral elements removed from the SLS with the harvested edible biomass and those added to it with the inedible biomasses of wheat and saltwort.

  8. The influence of substrate temperature and deposition pressure on pulsed laser deposited thin films of CaS:Eu{sup 2+} phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Nyenge, R.L. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Physics Department, Kenyatta University, P.O. Box 43844-0100, Nairobi (Kenya); Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Ntwaeaborwa, O.M., E-mail: ntwaeab@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa)

    2016-01-01

    The aim of this study was to investigate the influence of substrate temperature and argon deposition pressure on the structure, morphology and photoluminescence emission (PL) properties of pulsed laser deposited thin films of CaS:Eu{sup 2+}. The PL intensity improved significantly upon reaching substrate temperature of 650 °C. The (200) peak gradually became the preferred orientation. The increase in PL intensity as well as surface roughness is attributed to improved crystallinity and higher growth rates, respectively. The best PL intensity as a function of deposition pressure was obtained at an argon pressure of 80 mTorr. The initial increase and eventual drop in PL intensity as deposition pressure increases is ascribed to the changes in growth rates.

  9. High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

    KAUST Repository

    Singh, Devendra

    2017-08-24

    Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

  10. High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

    KAUST Repository

    Singh, Devendra; Kumar, Ravi; Ganguli, Tapas; Major, Syed S

    2017-01-01

    Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

  11. Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiNx Films at Low Substrate Temperatures

    Science.gov (United States)

    Heya, Akira; Niki, Toshikazu; Takano, Masahiro; Yonezawa, Yasuto; Minamikawa, Toshiharu; Muroi, Susumu; Minami, Shigehira; Izumi, Akira; Masuda, Atsushi; Umemoto, Hironobu; Matsumura, Hideki

    2004-12-01

    Highly moisture-resistive SiNx films on a Si substrate are obtained at substrate temperatures of 80°C by catalytic chemical vapor deposition (Cat-CVD) using a source gas with H2. Atomic hydrogen effected the selective etching of a weak-bond regions and an increase in atomic density induced by the energy of the surface reaction. It is concluded that Cat-CVD using H2 is a promising candidate for the fabrication of highly moisture-resistive SiNx films at low temperatures.

  12. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseeva, Yu. V., E-mail: fedoseeva@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Pozdnyakov, G.A. [Khristianovich Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk 630090 (Russian Federation); Okotrub, A.V.; Kanygin, M.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nastaushev, Yu. V. [Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Vilkov, O.Y. [St. Petersburg State University, St. Petersburg 198504 (Russian Federation); Bulusheva, L.G. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

    2016-11-01

    Highlights: • A deposition of supersonic methane plasma flow on silicon substrate produces amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) film. • The thickness, composition, and wettability of the film depend on the substrate temperature. • A rise of the substrate temperature from 500 to 700 °C promotes the sp{sup 3}-hybridization carbon formation. - Abstract: Since amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of CO{sub x}H{sub y} films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the CO{sub x}H{sub y} films, deposited at 300 and 500 °C, were mainly composed of the sp{sup 2}-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  13. Photoluminescence of ZnO thin films deposited at various substrate temperatures

    International Nuclear Information System (INIS)

    Kao, Kuo-Sheng; Shih, Wei-Che; Ye, Wei-Tsuen; Cheng, Da-Long

    2016-01-01

    This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. - Highlights: • The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes. • The crystalline of ZnO affects the EHP recombination and generation. • The PL spectrum of ZnO shows Gaussian fitting distributions. • The CTD_U_V is influenced by SAW types and ZnO film characteristics.

  14. Photoluminescence of ZnO thin films deposited at various substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Kuo-Sheng [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China); Shih, Wei-Che [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Ye, Wei-Tsuen [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China); Cheng, Da-Long, E-mail: dlcheng@stu.edu.tw [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China)

    2016-04-30

    This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. - Highlights: • The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes. • The crystalline of ZnO affects the EHP recombination and generation. • The PL spectrum of ZnO shows Gaussian fitting distributions. • The CTD{sub UV} is influenced by SAW types and ZnO film characteristics.

  15. Evolution of sp2 networks with substrate temperature in amorphous carbon films: Experiment and theory

    International Nuclear Information System (INIS)

    Gago, R.; Vinnichenko, M.; Jaeger, H.U.; Maitz, M.F.; Belov, A.Yu.; Jimenez, I.; Huang, N.; Sun, H.

    2005-01-01

    The evolution of sp 2 hybrids in amorphous carbon (a-C) films deposited at different substrate temperatures was studied experimentally and theoretically. The bonding structure of a-C films prepared by filtered cathodic vacuum arc was assessed by the combination of visible Raman spectroscopy, x-ray absorption, and spectroscopic ellipsometry, while a-C structures were generated by molecular-dynamics deposition simulations with the Brenner interatomic potential to determine theoretical sp 2 site distributions. The experimental results show a transition from tetrahedral a-C (ta-C) to sp 2 -rich structures at ∼500 K. The sp 2 hybrids are mainly arranged in chains or pairs whereas graphitic structures are only promoted for sp 2 fractions above 80%. The theoretical analysis confirms the preferred pairing of isolated sp 2 sites in ta-C, the coalescence of sp 2 clusters for medium sp 2 fractions, and the pronounced formation of rings for sp 2 fractions >80%. However, the dominance of sixfold rings is not reproduced theoretically, probably related to the functional form of the interatomic potential used

  16. Effects of Annealing Temperature on Properties of Ti-Ga-Doped ZnO Films Deposited on Flexible Substrates.

    Science.gov (United States)

    Chen, Tao-Hsing; Chen, Ting-You

    2015-11-03

    An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga-doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

  17. Surface morphology of polyethylene glycol films produced by matrix-assisted pulsed laser evaporation (MAPLE): Dependence on substrate temperature

    DEFF Research Database (Denmark)

    Rodrigo, K.; Czuba, P.; Toftmann, B.

    2006-01-01

    The dependence of the surface morphology on the substrate temperature during film deposition was investigated for polyethylene glycol (PEG) films by matrix-assisted pulsed laser evaporation (MAPLE). The surface structure was studied with a combined technique of optical imaging and AFM measurements...

  18. Nanoparticle manipulation in the near-substrate areas of low-temperature, high-density rf plasmas

    International Nuclear Information System (INIS)

    Rutkevych, P.P.; Ostrikov, K.; Xu, S.

    2005-01-01

    Manipulation of a single nanoparticle in the near-substrate areas of high-density plasmas of low-temperature glow discharges is studied. It is shown that the nanoparticles can be efficiently manipulated by the thermophoretic force controlled by external heating of the substrate stage. Particle deposition onto or repulsion from nanostructured carbon surfaces critically depends on the values of the neutral gas temperature gradient in the near-substrate areas, which is directly measured in situ in different heating regimes by originally developed temperature gradient probe. The measured values of the near-surface temperature gradient are used in the numerical model of nanoparticle dynamics in a variable-length presheath. Specific conditions enabling the nanoparticle to overcome the repulsive potential and deposit on the substrate during the discharge operation are investigated. The results are relevant to fabrication of various nanostructured films employing structural incorporation of the plasma-grown nanoparticles, in particular, to nanoparticle deposition in the plasma-enhanced chemical-vapor deposition of carbon nanostructures in hydrocarbon-based plasmas

  19. Temperature dependent investigation on optically active process of higher-order bands in irradiated silicon

    International Nuclear Information System (INIS)

    Shi Yi; Nanjing Univ., JS; Wu Fengmei; Nanjing Univ., JS; Zheng Youdou; Nanjing Univ., JS; Suezawa, M.; Imai, M.; Sumino, K.

    1996-01-01

    Optically active processes of the higher-order bands (HOB) are investigated at different temperatures in fast neutron irradiated silicon using Fourier transform infrared absorption measurement. It is shown that the optically active process is nearly temperature independent below 80 K, the slow decay process remains up to a heating temperature of 180 K. The observations are analyzed in terms of the relaxation behavior of photoexcited carriers governed by fast neutron radiation induced defect clusters. (orig.)

  20. The effect of substrate texture and oxidation temperature on oxide texture development in zirconium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Garner, A., E-mail: alistair.garner@manchester.ac.uk [Materials Performance Centre, University of Manchester, Grosvenor Street, Manchester, M17HS (United Kingdom); Frankel, P. [Materials Performance Centre, University of Manchester, Grosvenor Street, Manchester, M17HS (United Kingdom); Partezana, J. [Westinghouse Electric Company, 1332 Beulah Road, Pittsburgh, PA 15235 (United States); Preuss, M. [Materials Performance Centre, University of Manchester, Grosvenor Street, Manchester, M17HS (United Kingdom)

    2017-02-15

    During corrosion of zirconium alloys a highly textured oxide is formed, the degree of this preferred orientation has previously been shown to be an important factor in determining the corrosion behaviour of these alloys. Two distinct experiments were designed in order to investigate the origin of this oxide texture development on two commercial alloys. Firstly, sheet samples of Zircaloy-4 were oxidised between 500 and 800 °C in air. The resulting monoclinic oxide texture strength was observed to decrease with increasing oxidation temperature. In a second experiment, orthogonal faces of Low Tin ZIRLO{sub ™} were oxidised in 360 °C water, providing different substrate textures but identical microstructures. The substrate texture was observed to have a negligible effect on the corrosion performance whilst the major orientation of both oxide phases was found to be independent of substrate orientation. It is concluded that the main driving force for oxide texture development in single-phase zirconium alloys is the compressive stress caused by the Zr−ZrO{sub 2} transformation. - Highlights: • Substrate orientation does not significantly affect oxide texture development. • Corrosion performance is independent of substrate texture. • Monoclinic oxide texture strength decreases with increasing oxidation temperature. • The main driving force for texture development is the oxidation-induced stress.

  1. Temperature dependence of critical current and transport current losses of 4 mm YBCO coated conductors manufactured using nonmagnetic substrate

    Science.gov (United States)

    Kvitkovic, J.; Hatwar, R.; Pamidi, S. V.; Fleshler, S.; Thieme, C.

    2015-12-01

    The temperature dependence of the critical current and AC losses were measured on American Superconductor Corporation's (AMSC) second generation high temperature superconducting (2G HTS) wire produced by Rolling Assisted Biaxially Textured Substrate (RABiTS) and Metal Organic Deposition (MOD) process. Wires manufactured with two types of substrates were characterized. The magnetic substrate with composition Ni5a%W exhibits a magnetic signature and has non-negligible AC losses in AC power applications. A new nonmagnetic substrate with an alloy composition Ni9a%W has been developed by AMSC to address the AC losses in 2G HTS. The data presented show that the performance of the new conductor is identical to the conductor with magnetic substrate in terms of critical current density. The data on AC losses demonstrate the absence of ferromagnetic loss component in the new conductor and significantly reduced AC losses at low to moderate values of I/Ic. The reduced losses will translate into reduced capital costs and lower operating costs of superconducting electrical devices for AC applications.

  2. Temperature variation of higher-order elastic constants of MgO

    Indian Academy of Sciences (India)

    series of strains using Taylor's series expansion. The coefficients of quadratic, cu- ... as thermal expansion, specific heat at higher temperature, temperature variation of ultrasonic velocity and attenuation, .... such studies have an impression that linear variation of elastic constant is true. The experimental study shows that ...

  3. Effect of substrate on excess electrical conductivity in thin superconducting lead films above the transition temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ashwini Kumar, P K

    1976-03-01

    Measurements were made on Pb films grown directly on to glass and Pb films grown on glass precoated with LiF to investigate the effect of the substrate on thermodynamic fluctuations of Cooper pairs. A change in the substrate appears to alter the strength of the pair breaking mechanism. 17 references.

  4. Biochar increases plant growth and alters microbial communities via regulating the moisture and temperature of green roof substrates.

    Science.gov (United States)

    Chen, Haoming; Ma, Jinyi; Wei, Jiaxing; Gong, Xin; Yu, Xichen; Guo, Hui; Zhao, Yanwen

    2018-09-01

    Green roofs have increasingly been designed and applied to relieve environmental problems, such as water loss, air pollution as well as heat island effect. Substrate and vegetation are important components of green roofs providing ecosystem services and benefiting the urban development. Biochar made from sewage sludge could be potentially used as the substrate amendment for green roofs, however, the effects of biochar on substrate quality and plant performance in green roofs are still unclear. We evaluated the effects of adding sludge biochar (0, 5, 10, 15 and 20%, v/v) to natural soil planted with three types of plant species (ryegrass, Sedum lineare and cucumber) on soil properties, plant growth and microbial communities in both green roof and ground ecosystems. Our results showed that sludge biochar addition significantly increased substrate moisture, adjusted substrate temperature, altered microbial community structure and increased plant growth. The application rate of 10-15% sludge biochar on the green roof exerted the most significant effects on both microbial and plant biomass by 63.9-89.6% and 54.0-54.2% respectively. Path analysis showed that biochar addition had a strong effect on microbial biomass via changing the soil air-filled porosity, soil moisture and temperature, and promoted plant growth through the positive effects on microbial biomass. These results suggest that the applications of biochar at an appropriate rate can significantly alter plant growth and microbial community structure, and increase the ecological benefits of green roofs via exerting effects on the moisture, temperature and nutrients of roof substrates. Copyright © 2018 Elsevier B.V. All rights reserved.

  5. High Momentum Particle Identification Detector The Study of Cesium Iodide Quantum Efficiency Dependency on Substrate Material, Temperature and Quartz Window

    CERN Document Server

    Wisna, Gde Bimananda M

    2014-01-01

    The Cesium Iodide (CsI) is used as a material for detecting Cherenkov radiation produced by high momentum particle in High Momentum Particle Identification Detector (HMPID) at ALICE Experiment at CERN. This work provides investigation and analysis of The Quantum Efficiency (QE) result of CsI which is deposited on five samples substrates such as copper passivated red, copper passivated yellow, aluminium, copper coated with nickel and copper coated with nickel then coated with gold. The measurement of five samples is held under temperature $60^{0}$ C and $25^{0}$ C (room temperature) and also with optical quartz window which can be adjusted to limit the wavelength range which reach the CsI. The result shows there are dependency of substrate, temperature due to enhancement effect and also quartz windows usage on QE of CsI. The results of five samples is then compared and analyzed.

  6. The Effect of Ion Energy and Substrate Temperature on Deuterium Trapping in Tungsten

    Science.gov (United States)

    Roszell, John Patrick Town

    Tungsten is a candidate plasma facing material for next generation magnetic fusion devices such as ITER and there are major operational and safety issues associated with hydrogen (tritium) retention in plasma facing components. An ion gun was used to simulate plasma-material interactions under various conditions in order to study hydrogen retention characteristics of tungsten thus enabling better predictions of hydrogen retention in ITER. Thermal Desorption Spectroscopy (TDS) was used to measure deuterium retention from ion irradiation while modelling of TDS spectra with the Tritium Migration Analysis Program (TMAP) was used to provide information about the trapping mechanisms involved in deuterium retention in tungsten. X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) were used to determine the depth resolved composition of specimens used for irradiation experiments. Carbon and oxygen atoms will be among the most common contaminants within ITER. C and O contamination in polycrystalline tungsten (PCW) specimens even at low levels (˜0.1%) was shown to reduce deuterium retention by preventing diffusion of deuterium into the bulk of the specimen. This diffusion barrier was also responsible for the inhibition of blister formation during irradiations at 500 K. These observations may provide possible mitigation techniques for problems associated with tritium retention and mechanical damage to plasma facing components caused by hydrogen implantation. Deuterium trapping in PCW and single crystal tungsten (SCW) was studied as a function of ion energy and substrate temperature. Deuterium retention was shown to decrease with decreasing ion energy below 100 eV/D+. Irradiation of tungsten specimens with 10 eV/D+ ions was shown to retain up to an order of magnitude less deuterium than irradiation with 500 eV/D+ ions. Furthermore, the retention mechanism for deuterium was shown to be consistent across the entire energy range studied (10-500 e

  7. Structural and photoluminescence characterization of SnO{sub 2}: F thin films deposited by advanced spray pyrolysis technique at low substrate temperature

    Energy Technology Data Exchange (ETDEWEB)

    Shewale, P.S. [Thin Film Physics Laboratory, Department of Electronics, Shivaji University, Kolhapur 416004 (India); Ung Sim, Kyu; Kim, Ye-bin; Kim, J.H. [Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500757 (Korea, Republic of); Moholkar, A.V. [Department of Physics, Shivaji University, Kolhapur 416004 (India); Uplane, M.D., E-mail: mdu_eln@unishivaji.ac.in [Thin Film Physics Laboratory, Department of Electronics, Shivaji University, Kolhapur 416004 (India)

    2013-07-15

    Fluorine doped tin oxide (FTO) thin films were deposited on glass substrates, at different substrate temperatures using advanced spray pyrolysis technique. X-ray diffraction studies showed that the crystallinity of the thin films increased with increasing substrate temperature. FESEM and AFM studies support the conclusions drawn from X-ray diffraction studies. X-ray photoelectron studies confirm oxygen deficiency in formation of the FTO nanocrystallites. The photoluminescence of the FTO films were investigated. It was found that, room temperature photoluminescence spectra are dominated by oxygen vacancies and exhibit a rich violet photoluminescence band about ∼404 nm with an extensively feeble red emission about 700 nm. The Photoluminescence intensity varies with the substrate temperature. The photoemission position is observed to be independent of substrate temperature. -- Highlights: ► Photoluminescent FTO thin films were deposited at low substrate temperatures. ► Influence of substrate temperature on the PL characteristics was studied. ► The samples are polycrystalline with a cassiterite tetragonal crystal structure. ► The room temperature UV/violet PL emission was dominated by the oxygen vacancies. ► PL efficiency is optimum at 613 K substrate temperature.

  8. Impact of temperature and substrate concentration on degradation rates of acetate, propionate and hydrogen and their links to microbial community structure.

    Science.gov (United States)

    Zhao, Jing; Westerholm, Maria; Qiao, Wei; Yin, Dongmin; Bi, Shaojie; Jiang, Mengmeng; Dong, Renjie

    2018-05-01

    The present study investigates the conversion of acetate, propionate and hydrogen consumption linked to the microbial community structure and related to temperature and substrate concentration. Biogas reactors were continuously fed with coffee powder (20 g-COD/L) or acetate (20, 40, and 60 g-COD/L) and operated for 193 days at 37 °C or 55 °C conditions. Starting HRT was 23 days which was then reduced to 7 days. The kinetics of acetate and propionate degradation and hydrogen consumption rates were measured in batch assays. At HRT 7 days, the degradation rate of propionate was higher in thermophilic batches, while acetate degradation rate was higher at mesophilic conditions. The gaseous hydrogen consumption in acetate reactors increased proportionally with temperature and substrate concentration, while the dissolved hydrogen was not affected. The relative high abundance of hydrogentrophic methanogens indicated that the methanogenesis was directed towards the syntrophic acetate oxidation pathway at high acetate concentration and high temperature. Copyright © 2018 Elsevier Ltd. All rights reserved.

  9. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    International Nuclear Information System (INIS)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-01-01

    The (Ba, Sr) TiO 3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO 3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO 3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO 3 film deposited at higher temperatures (upwards of 400 deg. C) shows preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO 3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO 3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO 3 film on the ruthenium electrode at low temperatures of less than 400 deg. C

  10. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    Science.gov (United States)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-05-01

    The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

  11. Preparation of MgO Films as Buffer Layers by Laser-ablation at Various Substrate Temperatures

    Institute of Scientific and Technical Information of China (English)

    LI Ling; WANG Chuanbin; WANG Fang; SHEN Qiang; ZHANG Lianmeng

    2011-01-01

    MgO thin films were deposited on Si(100) substrates by laser ablation under various substrate temperatures (Tsub),expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from (200) to (111).The crystallinity and surface morphology was different too,depending on Tsub·At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.

  12. Method and apparatus for forming high-critical-temperature superconducting layers on flat and/or elongated substrates

    Science.gov (United States)

    Ciszek, Theodore F.

    1994-01-01

    An elongated, flexible superconductive wire or strip is fabricated by pulling it through and out of a melt of metal oxide material at a rate conducive to forming a crystalline coating of superconductive metal oxide material on an elongated, flexible substrate wire or strip. A coating of crystalline superconductive material, such as Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8, is annealed to effect conductive contact between adjacent crystalline structures in the coating material, which is then cooled to room temperature. The container for the melt can accommodate continuous passage of the substrate through the melt. Also, a second pass-through container can be used to simultaneously anneal and overcoat the superconductive coating with a hot metallic material, such as silver or silver alloy. A hollow, elongated tube casting method of forming an elongated, flexible superconductive wire includes drawing the melt by differential pressure into a heated tubular substrate.

  13. The effect of substrate microstructure on high temperature oxidation of Zr alloy

    International Nuclear Information System (INIS)

    Li, H.; Lin, J.; Szpunar, J.

    2005-01-01

    'Full text:' Specimens with various substrate microstructures of Zr-2.5Nb, Zircaloy 4 and pure Zr have been oxidized at 500C in air. Oxidation kinetics is measured and the microstructures of both oxide and substrate are analyzed. The difference in oxidation kinetics among various specimens is significant. This difference is explained by the distribution of oxide grain size, grain shape and grain boundary, which are controlled by substrate grain size and β phase distribution. The previously proposed model of Zr oxidation is used to predict oxidation kinetics and oxide microstructure from substrate microstructure. Computer simulation based on the model is performed and simulation results are compared with the experimental results. (author)

  14. Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

    Directory of Open Access Journals (Sweden)

    Samia Ahmed Nadi

    2014-01-01

    Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

  15. Laboratory Study of the Influence of Substrate Type and Temperature on the Exploratory Tunneling by Formosan Subterranean Termite

    Directory of Open Access Journals (Sweden)

    Bal K. Gautam

    2012-06-01

    Full Text Available Using two-dimensional foraging arenas, laboratory tests were conducted to investigate the effect of soil type, soil moisture level and ambient temperature on the exploratory tunneling by Coptotermes formosanus Shiraki. In choice arenas consisting of two substrate types having two moisture levels each, and conducted at a constant temperature of 22 °C, a significantly greater proportion of termites aggregated in sand than in sandy loam. Similarly, the length of excavated tunnels was also increased in sand. In a given substrate, termite aggregation or tunnel length did not differ between 5% and 15% moisture levels. In no-choice tests, where three different substrates (sand, sandy loam and silt loam were tested at two temperatures (22 °C and 28 °C, excavations were significantly greater in sand than either sandy loam or silt loam at 22 °C. Fewer primary tunnels were constructed in sandy loam than in sand and fewer branched tunnels than either in sand or silt loam. No significant difference in either tunnel length or number of primary or branched tunnels was found between these two temperatures.

  16. Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

    2014-01-01

    Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

  17. An Inverse Relationship Links Temperature and Substrate Apparent Affinity in the Ion-Coupled Cotransporters rGAT1 and KAAT1

    Directory of Open Access Journals (Sweden)

    Antonio Peres

    2012-11-01

    Full Text Available The effects of temperature on the operation of two ion-coupled cotransporters of the SLC6A family, namely rat GAT1 (SLC6A1 and KAAT1 (SLC6A19 from Manduca sexta, have been studied by electrophysiological means in Xenopus laevis oocytes expressing these proteins. The maximal transport-associated current (Imax and the apparent substrate affinity (K05 were measured. In addition to the expected increase in transport rate (Q10 = 3–6, both transporters showed greater K05 values (i.e., a decrease in apparent affinity at higher temperatures. The transport efficiency, estimated as Imax/K05, increased at negative potentials in both transporters, but did not show statistically significant differences with temperature. The observation that the apparent substrate affinity is inversely related to the transport rate suggests a kinetic regulation of this parameter. Furthermore, the present results indicate that the affinities estimated at room temperature for mammalian cotransporters may not be simply extrapolated to their physiological operating conditions.

  18. Investigations on Ni-Co-Mn-Sn thin films: Effect of substrate temperature and Ar gas pressure on the martensitic transformations and exchange bias properties

    Energy Technology Data Exchange (ETDEWEB)

    Machavarapu, Ramudu, E-mail: macrams2@gmail.com; Jakob, Gerhard [Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudinger Weg 7, D-55128 Mainz (Germany)

    2015-03-15

    We report the effect of substrate temperature (T{sub S}) and Ar gas pressure (P{sub D}) on the martensitic transformations, magnetic and exchange bias (EB) properties in Heusler type Ni-Co-Mn-Sn epitaxial thin films. Martensitic transformation temperatures and EB fields at 5 K were found to increase with increasing T{sub S}. The observed maximum EB value of 320 Oe after field cooling in the film deposited at 650 {sup ∘}C is high among the values reported for Ni-Mn-Sn thin films which is attributed to the coexistence of ferromagnetic (FM) and antiferromagnetic (AF) phases in the martensitic state. In the case of P{sub D} variation, with increase in P{sub D}, martensitic transformation temperatures were increased and a sharp transformation was observed in the film deposited at 0.06 mbar. Magnetization values at 5 K were higher for increasing P{sub D}. These observations are attributed to the compositional shift. EB effect is also present in these films. Microstructural features observed using atomic force microscopy (AFM) shows a fine twinning and reduced precipitation with increase in P{sub D}, which is also confirmed from the scanning electron microscopy (SEM) images. EB effects in both series were confirmed from the training effect. Target ageing effect has been observed in the films deposited before and after ninety days of time interval. This has been confirmed both on substrate temperature and Ar gas pressure variations.

  19. Room temperature deposition of perpendicular magnetic anisotropic Co{sub 3}Pt thin films on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yu-Shen; Dai, Hong-Yu; Hsu, Yi-Wei [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China); Ou, Sin-Liang, E-mail: slo@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan (China); Chen, Shi-Wei [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300, Taiwan (China); Lu, Hsi-Chuan; Wang, Sea-Fue [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China); Sun, An-Cheng, E-mail: acsun@saturn.yzu.edu.tw [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China)

    2017-03-01

    Co{sub 3}Pt alloy thin films were deposited on the glass substrate at room temperature (RT) and 300 °C, which showed high perpendicular magnetic anisotropy (PMA) and isotropy magnetic behaviors, respectively. Co{sub 3}Pt HCP (0002) planes grew along the substrate plane for the films deposited at RT. The easy axis [0001] was consequently vertical to the substrate surface and obtained the predominant PMA. Large magnetic domains and sharp boundary also supported high PMA in RT-deposited samples. On the other hand, the PMA was significantly decreased with increasing the deposition temperature from RT to 300 °C. Hard HCP(0002) and soft A1(111) co-existed in the film and the magnetic exchanged coupling between these two phases induced isotropy magnetic behavior. In addition, the various thicknesses (t) of the RT-deposited Co{sub 3}Pt films were deposited with different base pressures prior to sputtering. The Kerr rotation loops showed high PMA and out-of-plane squareness (S{sub ⊥}) of ~0.9 were found in low base pressure chamber. Within high base pressure chamber, Co{sub 3}Pt films just show magnetic isotropy behaviors. This study provides a fabrication method for the preparation of high PMA HCP-type Co{sub 3}Pt films on the glass substrate without any underlayer at RT. The results could be the base for future development of RT-deposited magnetic alloy thin film with high PMA. - Highlights: • Fabricated high perpendicular magnetic anisotropy Co{sub 3}Pt thin film on glass substrate. • Prepared HCP Co{sub 3}Pt thin film at room temperature. • The key to enhance the PMA of the Co{sub 3}Pt films. • Thinner film is good to fabricate PMA Co{sub 3}Pt thin films.

  20. Calculating transport AC losses in stacks of high temperature superconductor coated conductors with magnetic substrates using FEM

    International Nuclear Information System (INIS)

    Ainslie, Mark D.; Flack, Tim J.; Campbell, Archie M.

    2012-01-01

    Properties of stacks of HTS coated conductors with and without a magnetic substrate. Non-magnetic substrate model is consistent with existing methods. Presence of a magnetic substrate increases the total AC loss of the stack. Differences and similarities between certain tapes within stacks are explained. Ferromagnetic loss of substrate negligible in most cases except small currents/fields. In this paper, the authors investigate the electromagnetic properties of stacks of high temperature superconductor (HTS) coated conductors with a particular focus on calculating the total transport AC loss. The cross-section of superconducting cables and coils is often modeled as a two-dimensional stack of coated conductors, and these stacks can be used to estimate the AC loss of a practical device. This paper uses a symmetric two dimensional (2D) finite element model based on the H formulation, and a detailed investigation into the effects of a magnetic substrate on the transport AC loss of a stack is presented. The number of coated conductors in each stack is varied from 1 to 150, and three types of substrate are compared: non-magnetic weakly magnetic and strongly magnetic. The non-magnetic substrate model is comparable with results from existing models for the limiting cases of a single tape (Norris) and an infinite stack (Clem). The presence of a magnetic substrate increases the total AC loss of the stack, due to an increased localized magnetic flux density, and the stronger the magnetic material, the further the flux penetrates into the stack overall. The AC loss is calculated for certain tapes within the stack, and the differences and similarities between the losses throughout the stack are explained using the magnetic flux penetration and current density distributions in those tapes. The ferromagnetic loss of the substrate itself is found to be negligible in most cases, except for small magnitudes of current. Applying these findings to practical applications, where AC

  1. Effect of substrate temperature on the microstructural properties of titanium nitride nanowires grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gbordzoe, S.; Kotoka, R.; Craven, Eric; Kumar, D.; Wu, F.; Narayan, J.

    2014-01-01

    The current work reports on the growth and microstructural characterization of titanium nitride (TiN) nanowires on single crystal silicon substrates using a pulsed laser deposition method. The physical and microstructural properties of the nanowires were characterized using field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The corrosion properties of the TiN nanowires compared to TiN thin film were evaluated using Direct Current potentiodynamic and electrochemical impedance spectroscopy. The nanowires corroded faster than the TiN thin film, because the nanowires have a larger surface area which makes them more reactive in a corrosive environment. It was observed from the FESEM image analyses that as the substrate temperature increases from 600 °C to 800 °C, there was an increase in both diameter (25 nm–50 nm) and length (150 nm–250 nm) of the nanowire growth. There was also an increase in spatial density with an increase of substrate temperature. The TEM results showed that the TiN nanowires grow epitaxially with the silicon substrate via domain matching epitaxy paradigm, despite a large misfit

  2. Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor.

    Science.gov (United States)

    Zhao, Yuxi; Song, Jeong-Gyu; Ryu, Gyeong Hee; Ko, Kyung Yong; Woo, Whang Je; Kim, Youngjun; Kim, Donghyun; Lim, Jun Hyung; Lee, Sunhee; Lee, Zonghoon; Park, Jusang; Kim, Hyungjun

    2018-05-08

    The efficient synthesis of two-dimensional molybdenum disulfide (2D MoS2) at low temperatures is essential for use in flexible devices. In this study, 2D MoS2 was grown directly at a low temperature of 200 °C on both hard (SiO2) and soft substrates (polyimide (PI)) using chemical vapor deposition (CVD) with Mo(CO)6 and H2S. We investigated the effect of the growth temperature and Mo concentration on the layered growth by Raman spectroscopy and microscopy. 2D MoS2 was grown by using low Mo concentration at a low temperature. Through optical microscopy, Raman spectroscopy, X-ray photoemission spectroscopy, photoluminescence, and transmission electron microscopy measurements, MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers. Furthermore, we demonstrated the realization of a 2D MoS2-based flexible gas sensor on a PI substrate without any transfer processes, with competitive sensor performance and mechanical durability at room temperature. This fabrication process has potential for burgeoning flexible and wearable nanotechnology applications.

  3. Upper lethal temperatures in three cold-tolerant insects are higher in winter than in summer.

    Science.gov (United States)

    Vu, Henry M; Duman, John G

    2017-08-01

    Upper lethal temperatures (ULTs) of cold-adapted insect species in winter have not been previously examined. We anticipated that as the lower lethal temperatures (LLTs) decreased (by 20-30°C) with the onset of winter, the ULTs would also decrease accordingly. Consequently, given the recent increases in winter freeze-thaw cycles and warmer winters due to climate change, it became of interest to determine whether ambient temperatures during thaws were approaching ULTs during the cold seasons. However, beetle Dendroides canadensis (Coleoptera: Pyrochroidae) larvae had higher 24 and 48 h ULT 50 (the temperature at which 50% mortality occurred) in winter than in summer. The 24 and 48 h ULT 50 for D. canadensis in winter were 40.9 and 38.7°C, respectively. For D. canadensis in summer, the 24 and 48 h ULT 50 were 36.7 and 36.4°C. During the transition periods of spring and autumn, the 24 h ULT 50 was 37.3 and 38.5°C, respectively. While D. canadensis in winter had a 24 h LT 50 range between LLT and ULT of 64°C, the summer range was only 41°C. Additionally, larvae of the beetle Cucujus clavipes clavipes (Coleoptera: Cucujidae) and the cranefly Tipula trivittata (Diptera: Tipulidae) also had higher ULTs in winter than in summer. This unexpected phenomenon of increased temperature survivorship at both lower and higher temperatures in the winter compared with that in the summer has not been previously documented. With the decreased high temperature tolerance as the season progresses from winter to summer, it was observed that environmental temperatures are closest to upper lethal temperatures in spring. © 2017. Published by The Company of Biologists Ltd.

  4. Effect of substrate temperature on the optical parameters of thermally evaporated Ge-Se-Te thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Pankaj, E-mail: pks_phy@yahoo.co.i [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India); Katyal, S.C. [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India)

    2009-05-01

    Thin films of Ge{sub 10}Se{sub 90-x}Te{sub x} (x = 0, 10, 20, 30, 40, 50) glassy alloys were deposited at three substrate temperatures (303 K, 363 K and 423 K) using conventional thermal evaporation technique at base pressure of {approx} 10{sup -4} Pa. X-ray diffraction results show that films deposited at 303 K are of amorphous nature while films deposited at 363 K and 423 K are of polycrystalline nature. The optical parameters, refractive index and optical gap have been derived from the transmission spectra (using UV-Vis-NIR spectrophotometer) of the thin films in the spectral region 400-1500 nm. This has been observed that refractive index values remain almost constant while the optical gap is found to decrease considerably with the increase of substrate temperature. The decrease in optical gap is explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase of substrate temperature. The optical gap has also been observed to decrease with the increase of Te content.

  5. Can air-breathing fish be adapted to higher than present temperatures?

    DEFF Research Database (Denmark)

    Bayley, Mark

    Air-breathing in fish is thought to have evolved in environments at lower than present oxygen levels and higher than present temperatures raising the question of whether extant species are adapted to recent temperature regimes or living at sub-optimal temperatures. The air-breathing Pangasionodon...... hypophthalmus inhabits the Mekong river system covering two climate zones during its life cycle and migrating more than 2000 km from hatching in northern Laos to its adult life in the southern delta region. It is a facultative air-breather with well-developed gills and air-breathing organ and an unusual...... circulatory bauplan. Here we examine the question of its optimal temperature through aspects of its cardio respiratory physiology including temperature effects on blood oxygen binding, ventilation and blood gasses, stereological measures of cardiorespiratory system, metabolic rate and growth. Comparing...

  6. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate

    International Nuclear Information System (INIS)

    Wei Meng; Wang Xiaoliang; Pan Xu; Xiao Hongling; Wang Cuimei; Zhang Minglan; Wang Zhanguo

    2011-01-01

    This paper investigated the influence of AlGaN buffer growth temperature on strain status and crystal quality of the GaN film on Si(111) sbustrates by metal organic chemical vapor deposition. It was demonstrated by the optical microscopy that AlGaN buffer gorwth temperature had a remarkable effect on compensating tensil stress in top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed crystal quality and surface morphology of the GaN epilayer could be improved through increasing AlGaN buffer growth temperature. 1μm crack-free GaN epilayer on Si (111) substrates was obtained with graded AlGaN buffer layer at optimized temperature of 1050 deg. C. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer.

  7. Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

    Science.gov (United States)

    Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

    2015-12-19

    Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

  8. Effect of RF power and substrate temperature on physical properties of Zr0.8Sn0.2TiO4 films by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hsu Cheng-Shing; Huang Cheng-Liang

    2001-01-01

    Physical properties of rf-sputtered crystalline (Zr 0.8 Sn 0.2 )TiO 4 (ZST) thin films deposited on n-type Si(100) substrates at different rf powers and substrate temperatures have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) were found to be sensitive to deposition conditions, such as rf power from 300 W to 400 W and substrate temperature (400degC, 450degC). Highly oriented ZST (111) and (002) perpendicular to the substrate surface were identified at a rf power of 400 W and a substrate temperature of 450degC. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. The leakage current decreased with increasing rf power and substrate temperature. As rf power = 400 W and substrate temperature = 450degC, a leakage current of 7.2x10 -11 A was obtained at 1 V. (author)

  9. Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum

    Directory of Open Access Journals (Sweden)

    Marietta Seifert

    2015-12-01

    Full Text Available Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

  10. Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

    Science.gov (United States)

    Polkowski, Wojciech; Sobczak, Natalia; Nowak, Rafał; Kudyba, Artur; Bruzda, Grzegorz; Polkowska, Adelajda; Homa, Marta; Turalska, Patrycja; Tangstad, Merete; Safarian, Jafar; Moosavi-Khoonsari, Elmira; Datas, Alejandro

    2017-12-01

    For a successful implementation of newly proposed silicon-based latent heat thermal energy storage systems, proper ceramic materials that could withstand a contact heating with molten silicon at temperatures much higher than its melting point need to be developed. In this regard, a non-wetting behavior and low reactivity are the main criteria determining the applicability of ceramic as a potential crucible material for long-term ultrahigh temperature contact with molten silicon. In this work, the wetting of hexagonal boron nitride (h-BN) by molten silicon was examined for the first time at temperatures up to 1750 °C. For this purpose, the sessile drop technique combined with contact heating procedure under static argon was used. The reactivity in Si/h-BN system under proposed conditions was evaluated by SEM/EDS examinations of the solidified couple. It was demonstrated that increase in temperature improves wetting, and consequently, non-wetting-to-wetting transition takes place at around 1650 °C. The contact angle of 90° ± 5° is maintained at temperatures up to 1750 °C. The results of structural characterization supported by a thermodynamic modeling indicate that the wetting behavior of the Si/h-BN couple during heating to and cooling from ultrahigh temperature of 1750 °C is mainly controlled by the substrate dissolution/reprecipitation mechanism.

  11. Temperature, Crystalline Phase and Influence of Substrate Properties in Intense Pulsed Light Sintering of Copper Sulfide Nanoparticle Thin Films.

    Science.gov (United States)

    Dexter, Michael; Gao, Zhongwei; Bansal, Shalu; Chang, Chih-Hung; Malhotra, Rajiv

    2018-02-02

    Intense Pulsed Light sintering (IPL) uses pulsed, visible light to sinter nanoparticles (NPs) into films used in functional devices. While IPL of chalcogenide NPs is demonstrated, there is limited work on prediction of crystalline phase of the film and the impact of optical properties of the substrate. Here we characterize and model the evolution of film temperature and crystalline phase during IPL of chalcogenide copper sulfide NP films on glass. Recrystallization of the film to crystalline covellite and digenite phases occurs at 126 °C and 155 °C respectively within 2-7 seconds. Post-IPL films exhibit p-type behavior, lower resistivity (~10 -3 -10 -4  Ω-cm), similar visible transmission and lower near-infrared transmission as compared to the as-deposited film. A thermal model is experimentally validated, and extended by combining it with a thermodynamic approach for crystal phase prediction and via incorporating the influence of film transmittivity and optical properties of the substrate on heating during IPL. The model is used to show the need to a-priori control IPL parameters to concurrently account for both the thermal and optical properties of the film and substrate in order to obtain a desired crystalline phase during IPL of such thin films on paper and polycarbonate substrates.

  12. Temperature calibration procedure for thin film substrates for thermo-ellipsometric analysis using melting point standards

    NARCIS (Netherlands)

    Kappert, Emiel; Raaijmakers, Michiel; Ogieglo, Wojciech; Nijmeijer, Arian; Huiskes, Cindy; Huiskes, C.; Benes, Nieck Edwin

    2015-01-01

    Precise and accurate temperature control is pertinent to studying thermally activated processes in thin films. Here, we present a calibration method for the substrate–film interface temperature using spectroscopic ellipsometry. The method is adapted from temperature calibration methods that are well

  13. Effect of substrate temperature on the structure, electrical and optical properties of Mo doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Guifeng; Zhao, Xiaoli; Zhang, Hui; Wang, He; Liu, Feifei; Zhang, Xiaoqiang [Key Lab. for New Type of Functional Materials in Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China); Gao, Jianbo [China Institute of Atomic Energy, Beijing 102413 (China); Zhao, Yanmin; Zhang, Chao [No. 18TH Research Institute, China Electronics Technology Group Corporation, Tianjin 300384 (China); Tao, Junguang, E-mail: taojunguang@163.com [Key Lab. for New Type of Functional Materials in Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

    2016-09-15

    Highlights: • MZO thin films were prepared by RF magnetron sputtering from ZnO target and DC magnetron sputtering from Mo target. • All films are polycrystalline with preferential c-axis growth. • The various properties of films fabricated at varied substrate temperature have been studied. • The valence of the Mo ions in the ZnO matrix is mixture of +5 and +6. - Abstract: Mo-doped ZnO (MZO) transparent conductive thin films were prepared on glass substrate under various substrate temperature from 50 °C to 200 °C. The microstructural, electrical and optical properties of the MZO films were investigated by X-ray diffraction (XRD), Hall effect and UV–vis spectrophotometer. Based on XRD measurements, all films are polycrystalline with preferential c-axis growth. The lowest resistivity was obtained to be 2.8 × 10{sup −3} Ω·cm. According to X-ray photoelectron spectroscopy (XPS) measurement, the valence of the Mo ions in the ZnO matrix is a mixture of +5 and +6. In addition, the transmittance of the film is ∼80% throughout the visible light region. Our results indicate that the MZO films are suitable for potential transparent optoelectronic applications.

  14. Effective temperatures and radiation spectra for a higher-dimensional Schwarzschild-de Sitter black hole

    Science.gov (United States)

    Kanti, P.; Pappas, T.

    2017-07-01

    The absence of a true thermodynamical equilibrium for an observer located in the causal area of a Schwarzschild-de Sitter spacetime has repeatedly raised the question of the correct definition of its temperature. In this work, we consider five different temperatures for a higher-dimensional Schwarzschild-de Sitter black hole: the bare T0, the normalized TBH, and three effective ones given in terms of both the black-hole and cosmological horizon temperatures. We find that these five temperatures exhibit similarities but also significant differences in their behavior as the number of extra dimensions and the value of the cosmological constant are varied. We then investigate their effect on the energy emission spectra of Hawking radiation. We demonstrate that the radiation spectra for the normalized temperature TBH—proposed by Bousso and Hawking over twenty years ago—leads to the dominant emission curve, while the other temperatures either support a significant emission rate only in a specific Λ regime or have their emission rates globally suppressed. Finally, we compute the bulk-over-brane emissivity ratio and show that the use of different temperatures may lead to different conclusions regarding the brane or bulk dominance.

  15. Quality improvement of ZnO thin layers overgrown on Si(100 substrates at room temperature by nitridation pretreatment

    Directory of Open Access Journals (Sweden)

    Peng Wang

    2012-06-01

    Full Text Available To improve the quality of ZnO thin film overgrown on Si(100 substrate at RT (room temperature, the Si(100 surface was pretreated with different methods. The influence of interface on the overgrown ZnO layers was investigated by atomic force microscopy, photoluminescence and X-ray diffraction. We found that the nitridation pretreatment could significantly improve the quality of RT ZnO thin film through two-fold effects: one was to buffer the big lattice mismatch and ease the stress resulted from heterojunction growth; the other was to balance the interface charge, block the symmetric inheritance from the cubic Si (100 substrate and thus restrain the formation of zincblende phase.

  16. Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

    2010-01-01

    The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Investigation of high temperature reactions on solid substrates with Rutherford backscattering spectrometry: interaction of palladium with selenium on heated graphite surfaces

    International Nuclear Information System (INIS)

    Majidi, V.; Robertson, J.D.

    1991-01-01

    Selenium and palladium interactions on heated pyrolytically coated graphite substrates were investigated using Rutherford backscattering spectrometry. The studies were performed using selenium alone, palladium alone, and a combination of selenium and palladium deposited on the graphite substrates. The results indicate that palladium instantaneously stabilizes selenium at ambient temperatures and prevents the diffusion of selenium into the graphite. As the substrate is heated, temperature dependent diffusion of all analytes into the graphite is observed. Furthermore, it appears that the stabilization of selenium is due to the formation of a stoichiometric compound with palladium and oxygen. This compound decomposes at a temperature between 1070 and 1770 K. (author)

  18. Investigation of high temperature reactions on solid substrates with Rutherford backscattering spectrometry: interaction of palladium with selenium on heated graphite surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Majidi, V.; Robertson, J.D. (Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry)

    1991-01-01

    Selenium and palladium interactions on heated pyrolytically coated graphite substrates were investigated using Rutherford backscattering spectrometry. The studies were performed using selenium alone, palladium alone, and a combination of selenium and palladium deposited on the graphite substrates. The results indicate that palladium instantaneously stabilizes selenium at ambient temperatures and prevents the diffusion of selenium into the graphite. As the substrate is heated, temperature dependent diffusion of all analytes into the graphite is observed. Furthermore, it appears that the stabilization of selenium is due to the formation of a stoichiometric compound with palladium and oxygen. This compound decomposes at a temperature between 1070 and 1770 K. (author).

  19. Influence of substrate temperature and silver-doping on the structural and optical properties of TiO_2 films

    International Nuclear Information System (INIS)

    Fischer, Dieter

    2016-01-01

    Evaporation of titanium together with activated oxygen is used to grow TiO_2 films and simultaneously with silver to grow Ag–TiO_2 films (5 at.% Ag) onto sapphire substrates at three different substrate temperatures: − 190, 30, and 200 °C. The obtained films were characterized by X-ray powder diffraction, Raman, X-ray photoelectron, ultraviolet–visible spectroscopy, and transmission electron microscope investigations. The properties of TiO_2 films varied with the substrate temperature. Amorphous, transparent TiO_2 films were grown at − 190 °C and opaque, polycrystalline films at 200 °C, respectively. Surprisingly, at room temperature black, amorphous TiO_2 films are obtained which transform at 350 °C into a mixture of the anatase and brookite polymorph. In the amorphous state of the TiO_2 films a predefined rutile arrangement is suggested by Raman investigations, and the contraction of the lattice constant c of anatase phases (tetragonal, space group I 4_1/amd) depending on the substrate temperature is experimentally observed. The silver-doped TiO_2 films deposited at − 190 and 30 °C contain Ag-particles with 2 nm in size inside the TiO_2 matrix, which after annealing segregate under increasing particle sizes. The silver-doping stabilizes the anatase polymorph and yields to reduced titanium species in the films especially during deposition at 30 °C. The Ag–TiO_2 films deposited at − 190 °C are transparent up to 350 °C. In the undoped as well as silver-doped TiO_2 films the rutile polymorph is directly formed at 200 °C as main phase. - Highlights: • At room temperature black, amorphous TiO_2 films are obtained. • A predefined rutile arrangement is suggested in amorphous TiO_2 films. • Annealed TiO_2 films crystallize to a mixture of the anatase and brookite polymorph. • In TiO_2 and Ag-doped TiO_2 films the rutile polymorph is directly formed at 200 °C. • Ag-doped TiO_2 films stabilize the anatase polymorph and reduced titanium

  20. Aggregation of human sperm at higher temperature is due to hyperactivation.

    Science.gov (United States)

    Keppler, E L; Chan, P J; Patton, W C; King, A

    1999-01-01

    Chemotaxis of sperm cells to chemicals and hormones, such as progesterone, helps us to understand the concept of sperm transport. Here, the hypothesis was that heat increased sperm hyperactive motility, which caused the sperm to aggregate at the higher temperature. The objectives were (1) to determine the concentration of sperm at both halves of an artificial female reproductive tract made from a hermetically sealed cryopreservation straw filled with culture medium and placed with each end at different temperatures, and (2) to analyze the motility or kinematic parameters and hyperactivation of sperm found at the different temperatures. Cryopreserved-thawed human donor sperm (N = 6) were pooled and processed through 2-layer colloid solution. Analyses of the motile sperm were carried out and the washed sperm were homogeneously mixed and pipetted into several 0.5-mL French cryopreservation straws and heat-sealed. The control substance, consisting of acid-treated sperm, was also placed in several straws. The plastic straws of sperm were placed half at 23 degrees C and half was at either 37 or 40 degrees C. After 4 h, sperm at different sections of the straws were analyzed using the Hamilton Thorn motility analyzer (HTM-C). After 4 h of incubation, the concentration of sperm was doubled at the 40 degrees C heated half of the straw when compared with the other half of the straw at 23 degrees C. There were no differences in sperm concentration in the straw kept half at 37 degrees C and half at 23 degrees C. There were significantly higher percent motility, mean average path velocity, straight line velocity, lateral head displacement, and percent hyperactivation in sperm at the 40 degrees C temperature. The aggregation of sperm at the higher temperature of 40 degrees C may be due to enhanced motility, increased sperm velocities, and a 10-fold increase in hyperactivation at that temperature. The 37 degrees C temperature was not sufficient to attract sperm. Sperm cells

  1. The higher temperature in the areola supports the natural progression of the birth to breastfeeding continuum.

    Directory of Open Access Journals (Sweden)

    Vincenzo Zanardo

    Full Text Available Numerous functional features that promote the natural progression of the birth to breastfeeding continuum are concentrated in the human female's areolar region. The aim of this study was to look more closely into the thermal characteristics of areola, which are said to regulate the local evaporation rate of odors and chemical signals that are uniquely important for the neonate's 'breast crawl'. A dermatological study of the areolae and corresponding intern breast quadrants was undertaken on the mothers of 70 consecutive, healthy, full-term breastfed infants. The study took place just after the births at the Policlinico Abano Terme, in Italy from January to February 2014. Temperature, pH and elasticity were assessed one day postpartum using the Soft Plus 5.5 (Callegari S.P.A., Parma, Italy. The mean areolar temperature was found to be significantly higher than the corresponding breast quadrant (34.60 ±1.40°C vs. 34.04 ±2.00°C, p<0.001 and the pH was also significantly higher (4.60±0.59 vs. 4.17±0.59, p<0.001. In contrast, the elasticity of the areolar was significantly lower (23.52±7.83 vs. 29.02±8.44%, p<0.003. Our findings show, for the first time, that the areolar region has a higher temperature than the surrounding breast skin, together with higher pH values and lower elasticity. We believe that the higher temperature of the areolar region may act as a thermal signal to guide the infant directly to the nipple and to the natural progression of the birth to breastfeeding continuum.

  2. Above room-temperature ferromagnetism in La1-xCaxMnO3 epitaxial thin films on SrTiO3(001) substrates

    Science.gov (United States)

    Kou, Yunfang; Wang, Hui; Miao, Tian; Wang, Yanmei; Xie, Lin; Wang, Shasha; Liu, Hao; Lin, Hanxuan; Zhu, Yinyan; Wang, Wenbin; Du, Haifeng; Pan, Xiaoqing; Wu, Ruqian; Yin, Lifeng; Shen, Jian

    The colossal magnetoresistive (CMR) manganites are popular materials for spintronics applications due to their high spin polarization. Only a couple of manganites like La1-xSrxMnO3 have a Curie temperature (Tc) that is higher than room temperature. Finding methods to raise the Tc of manganites over room temperature is useful but challenging. In this work, we use the most intensively studied La1-xCaxMnO3 (LCMO) as the prototype system to demonstrate that Tc can be greatly enhanced by carefully tuning the electronic structure using doping and strain. Specifically, we grow LCMO films on SrTiO3 (001) substrates using pulsed laser deposition. Magnetic and transport measurements indicate a great enhancement of Tc over room temperature at x =0.2 doping. Theoretical calculations indicate that the combined effects from doping and strain give rise to a new electronic structure favoring ferromagnetism in LCMO system. Furthermore, using the La0.8Ca0.2MnO3 as ferromagnetic electrodes, we achieve finite tunneling magnetoresistance (TMR) above room temperature.

  3. Synthesis and characterisation of novel low temperature ceramic and its implementation as substrate in dual segment CDRA

    Science.gov (United States)

    Kumari, Preeti; Tripathi, Pankaj; Sahu, Bhagirath; Singh, S. P.; Parkash, Om; Kumar, Devendra

    2018-02-01

    Li2O-(2-3x)MgO-(x)Al2O3-P2O5 (LMAP) (x = 0.00-0.08) ceramic system was prepared through solid state synthesis route at different sintering temperatures (800-925 °C). A small addition of Al2O3 (x = 0.02) in LMAP ceramics lowers the sintering temperature by more than 100 °C with good relative density of 94.13%. The sintered samples were characterized in terms of density, apparent porosity, water absorption, crystal structure, micro-structure and microwave dielectric properties. Silver compatibility test is also performed for its use as electrode material in low temperature co-fired ceramic (LTCC) application. To check the performance of the prepared LTCC as substrate, a microstrip-fed aperture-coupled dual segment cylindrical dielectric resonator antenna (DS-CDRA) is designed using LMAP (x = 0.02) ceramic as substrate material and Barium Strontium Titanate with 10 wt% of PbO-BaO-B2O3-SiO2 glass (BSTG) and Teflon as the components of resonating material. The simulation study of the DS-CDRA is performed using the Ansys High Frequency Structure Simulator (HFSS) software. A conductive coating of silver is used on the substrate. The simulated and measured -10 dB reflection coefficient bandwidths of 910 MHz (9.07-9.98 GHz at resonant frequency of 9.49 GHz) and 1080 MHz (8.68-9.76 GHz at resonant frequency of 9.36 GHz), respectively are achieved. The measured results of the fabricated antenna are found in good agreement with the simulation results. The prepared material can find potential applications in radar and radio navigation as well as radio astronomy and military satellite communication.

  4. Effect of sintering temperature on the morphology and mechanical properties of PTFE membranes as a base substrate for proton exchange membrane

    Directory of Open Access Journals (Sweden)

    Nor Aida Zubir

    2002-11-01

    Full Text Available This paper reports the development of PTFE membranes as the base substrates for producing proton exchange membrane by using radiation-grafting technique. An aqueous dispersion of PTFE, which includes sodium benzoate, is cast in order to form suitable membranes. The casting was done by usinga pneumatically controlled flat sheet membrane-casting machine. The membrane is then sintered to fuse the polymer particles and cooled. After cooling process, the salt crystals are leached from the membrane by dissolution in hot bath to leave a microporous structure, which is suitable for such uses as a filtration membrane or as a base substrate for radiation grafted membrane in PEMFC. The effects of sintering temperature on the membrane morphology and tensile strength were investigated at 350oC and 385oC by using scanning electron microscopy (SEM and EX 20, respectively. The pore size and total void space are significantly smaller at higher sintering temperature employed with an average pore diameter of 11.78 nm. The tensile strength and tensile strain of sintered PTFE membrane at 385oC are approximately 19.02 + 1.46 MPa and 351.04 + 23.13 %, respectively. These results were indicated at 385oC, which represents significant improvements in tensile strength and tensile strain, which are nearly twice those at 350oC.

  5. Role of substrate and annealing temperature on the structure of ZnO and Al{sub x}Zn{sub 1−x}O thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Nambala, Fred Joe [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Department of Physics, University of Zambia, PO Box 32379, Great East Road Campus, Lusaka (Zambia); Nel, Jacqueline M.; Machatine, Augusto G.J. [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Mwakikunga, Bonex W. [DST/CSIR National Centre for Nano-Structured Materials, PO Box 395, Pretoria (South Africa); Njoroge, Eric G. [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Maabong, Kelebogile [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Physics Department, University of Botswana, Private Bag 0022, Gaborone (Botswana); Das, Arran G.M. [Monash University, Private Bag X60, Roodepoort 1725 (South Africa); Diale, Mmantsae, E-mail: mmantsae.diale@up.ac.za [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa)

    2016-01-01

    This paper reports on the deposition of pure and 5 at% Al doped ZnO (AZO) prepared by sol–gel and applied to the substrates by spin-coating, and the role of annealing temperature on the crystallinity of these layers. It is found that both ZnO and AZO are largely amorphous when coated on glass compared to n-Si(111), as substrates. On both substrates, X-ray diffraction (XRD) shows that the crystallinity improves as annealing temperature is raised from 200 to 600 °C with better crystallinity on Si substrates. The thickness of the films on substrates was determined as 120 nm by Rutherford backscattering spectroscopy (RBS). Specular ultra-violet visible (UV–vis) gives the direct transition optical band gaps (E{sub g}) for AZO as-deposited films are 2.60 and 3.35 eV while that of 600 °C annealed films are 3.00 and 3.60 eV. The E{sub g} calculated from diffuse reflectance spectroscopy (DRS) UV–vis are more diverse in ZnO- and AZO-Si than the ZnO- and AZO-glass samples, although in both sets the E{sub g} tend to converge after annealing 600 °C. The Raman spectra of samples show multiphonon processes of higher order from the AZO and substrates. It is found that residual stresses are related to E{sub 2} Raman mode.

  6. Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates

    International Nuclear Information System (INIS)

    Yin Xuesong; Tang Wu; Weng Xiaolong; Deng Longjiang

    2009-01-01

    Amorphous or weakly crystalline indium tin oxide (ITO) thin film samples have been prepared on polymethylmethacrylate and polyethylene terephthalate substrates by RF-magnetron sputtering at a low substrate temperature. The surface morphological and electrical properties of the ITO layers were measured by atomic force microscopy (AFM) and a standard four-point probe measurement. The effect of surface morphology on the resistivity of ITO thin films was studied, which presented some different variations from crystalline films. Then, a simplified film system model, including the substrate, continuous ITO layer and ITO surface grain, was proposed to deal with these correlations. Based on this thin film model and the AFM images, a quadratic potential was introduced to simulate the characteristics of the ITO surface morphology, and the classical Kronig-Penney model, the semiconductor electrical theory and the modified Neugebauer-Webb model were used to expound the detailed experimental results. The modelling equation was highly in accord with the experimental variations of the resistivity on the characteristics of the surface morphology.

  7. Cladonia lichens on extensive green roofs: evapotranspiration, substrate temperature, and albedo [v2; ref status: indexed, http://f1000r.es/2v4

    Directory of Open Access Journals (Sweden)

    Amy Heim

    2014-01-01

    Full Text Available Green roofs are constructed ecosystems that provide ecosystem services in urban environments. Shallow substrate green roofs subject the vegetation layer to desiccation and other environmental extremes, so researchers have evaluated a variety of stress-tolerant vegetation types for green roof applications. Lichens can be found in most terrestrial habitats.  They are able to survive extremely harsh conditions, including frequent cycles of desiccation and rehydration, nutrient-poor soil, fluctuating temperatures, and high UV intensities. Extensive green roofs (substrate depth <20cm exhibit these harsh conditions, making lichens possible candidates for incorporation into the vegetation layer on extensive green roofs.  In a modular green roof system, we tested the effect of Cladonia lichens on substrate temperature, water loss, and albedo compared to a substrate-only control. Overall, the Cladonia modules had significantly cooler substrate temperatures during the summer and significantly warmer temperatures during the fall.  Additionally, the Cladonia modules lost significantly less water than the substrate-only control. This implies that they may be able to benefit neighboring vascular plant species by reducing water loss and maintaining favorable substrate temperatures.

  8. Cladonia lichens on extensive green roofs: evapotranspiration, substrate temperature, and albedo [v1; ref status: indexed, http://f1000r.es/2ha

    Directory of Open Access Journals (Sweden)

    Amy Heim

    2013-12-01

    Full Text Available Green roofs are constructed ecosystems that provide ecosystem services in urban environments. Shallow substrate green roofs subject the vegetation layer to desiccation and other environmental extremes, so researchers have evaluated a variety of stress-tolerant vegetation types for green roof applications. Lichens can be found in most terrestrial habitats.  They are able to survive extremely harsh conditions, including frequent cycles of desiccation and rehydration, nutrient-poor soil, fluctuating temperatures, and high UV intensities. Extensive green roofs (substrate depth <20cm exhibit these harsh conditions, making lichens possible candidates for incorporation into the vegetation layer on extensive green roofs.  In a modular green roof system, we tested the effect of Cladonia lichens on substrate temperature, water loss, and albedo compared to a substrate-only control. Overall, the Cladonia modules had significantly cooler substrate temperatures during the summer and significantly warmer temperatures during the fall.  Additionally, the Cladonia modules lost significantly less water than the substrate-only control. This implies that they may be able to benefit neighboring vascular plant species by reducing water loss and maintaining favorable substrate temperatures.

  9. Textured Copper Metallic Substrates for 2nd Generation High Temperature Superconductor Applications

    National Research Council Canada - National Science Library

    Yust, Nicholas; Nekkanti, Rama; Brunke, Lyle; Barnes, Paul

    2003-01-01

    .... Detailed x-ray diffraction (XRD) studies along with orientation imaging microscopy were performed to measure the inplane alignment, out-of-plane alignment and microtexture for different annealing temperatures...

  10. Inkjet printed paper based frequency selective surfaces and skin mounted RFID tags : the interrelation between silver nanoparticle ink, paper substrate and low temperature sintering technique

    NARCIS (Netherlands)

    Sanchez-Romaquera, V.; Wïnscher, S.; Turki, B.M.; Abbel, R.J.; Barbosa, S.; Tate, D.J.; Oyeka, D.; Batchelor, J.C.; Parker, E.A.; Schubert, U.S.; Yeates, S.G.

    2015-01-01

    Inkjet printing of functional frequency selective surfaces (FSS) and radio frequency identification (RFID) tags on commercial paper substrates using silver nanoparticle inks sintered using low temperature thermal, plasma and photonic techniques is reported. Printed and sintered FSS devices

  11. Photoluminescence study of trap-state defect on TiO2 thin films at different substrate temperature via RF magnetron sputtering

    Science.gov (United States)

    Abdullah, S. A.; Sahdan, M. Z.; Nafarizal, N.; Saim, H.; Bakri, A. S.; Cik Rohaida, C. H.; Adriyanto, F.; Sari, Y.

    2018-04-01

    This paper highlights the defect levels using photoluminescence spectroscopy of TiO2 thin films. The TiO2 were deposited by Magnetron Sputtering system with 200, 300, 400, and 500 °C substrate temperature on microscope glass substrate. The PL result shows profound effect of various substrate temperatures to defect levels of oxygen vacancies and Ti3+ at titanium interstitial site. Increasing temperature would minimize the oxygen vacancy defect, however Ti3+ shows otherwise. Green region of PL consist of trapped hole for oxygen vacancy, while red region of PL is trapped electron associated to structural defect Ti3+. Green PL is dominant peak at temperature 200 °C, indicating that oxygen vacancy is the main defect at this temperature. However, PL peak shows slightly same value for others samples indicating that the temperature did not give high influence to other level of defect after 200 °C.

  12. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  13. Heating power at the substrate, electron temperature, and electron density in 2.45 GHz low-pressure microwave plasma

    Science.gov (United States)

    Kais, A.; Lo, J.; Thérèse, L.; Guillot, Ph.

    2018-01-01

    To control the temperature during a plasma treatment, an understanding of the link between the plasma parameters and the fundamental process responsible for the heating is required. In this work, the power supplied by the plasma onto the surface of a glass substrate is measured using the calorimetric method. It has been shown that the powers deposited by ions and electrons, and their recombination at the surface are the main contributions to the heating power. Each contribution is estimated according to the theory commonly used in the literature. Using the corona balance, the Modified Boltzmann Plot (MBP) is employed to determine the electron temperature. A correlation between the power deposited by the plasma and the results of the MBP has been established. This correlation has been used to estimate the electron number density independent of the Langmuir probe in considered conditions.

  14. Observation of room temperature ferromagnetism in ZnTe:Cr films grown onto glass substrate by thermal evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Soundararajan, D; Mangalaraj, D; Nataraj, D [Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore -641 046 (India); Dorosinskii, L [National Institute of Metrology (TUBITAK -UME), P.K. 54, 41470, Gebze -Kocaeli (Turkey); Santoyo-Salazar, J, E-mail: dorosins@ume.tubitak.gov.t [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, Mexico D.F. 04510 (Mexico)

    2009-03-01

    ZnTe and ZnTe:Cr films were prepared onto glass substrates using thermal evaporation method. Structural properties of the prepared samples were analyzed using X-ray diffractometer, and the presence of ZnCrTe phase was identified along with poor crystallinity. Composition analysis was done using XPS and the Cr content in the film was found to be 0.05 atomic percent. Transmittance spectra were recorded using UV-Vis spectrophotometer. The valence state of Cr in ZnTe:Cr film is determined to be +2 using electron spin resonance (ESR) spectroscopy. Magnetic moment data as a function of magnetic field were recorded using Superconducting Quantum Interference Device (SQUID) magnetometer at temperatures 5, 77 and 300 K. The results showed minority ferromagnetic behavior even at room temperature. Magnetic domains were observed using Magnetic Force Microscopy and the average value of domain size is 3.7 nm.

  15. Yield and cold storage of Trichoderma conidia is influenced by substrate pH and storage temperature.

    Science.gov (United States)

    Steyaert, Johanna M; Chomic, Anastasia; Nieto-Jacobo, Maria; Mendoza-Mendoza, Artemio; Hay, Amanda J; Braithwaite, Mark; Stewart, Alison

    2017-05-01

    In this study we examined the influence of the ambient pH during morphogenesis on conidial yield of Trichoderma sp. "atroviride B" LU132 and T. hamatum LU593 and storage at low temperatures. The ambient pH of the growth media had a dramatic influence on the level of Trichoderma conidiation and this was dependent on the strain and growth media. On malt-extract agar, LU593 yield decreased with increasing pH (3-6), whereas yield increased with increasing pH for LU132. During solid substrate production the reverse was true for LU132 whereby yield decreased with increasing pH. The germination potential of the conidia decreased significantly over time in cold storage and the rate of decline was a factor of the strain, pH during morphogenesis, growth media, and storage temperature. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, F. [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12485 Berlin (Germany)], E-mail: fenske@hmi.de; Schulze, S.; Hietschold, M. [Technische Universitaet Chemnitz, Analytik an Festkoerperoberflaechen, Reichenhainer Str. 70, D-09107 Chemnitz (Germany); Schmidbauer, M. [Institut fuer Kristallzuechtung Berlin, Max-Born-Str.2, D-12489 Berlin (Germany)

    2008-06-02

    Using pulsed magnetron sputtering at low substrate temperature (T{sub s} = 580 {sup o}C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {l_brace}111{r_brace} planes. Besides these defects - which are typical for low-temperature epitaxy - no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed.

  17. Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

    International Nuclear Information System (INIS)

    Fenske, F.; Schulze, S.; Hietschold, M.; Schmidbauer, M.

    2008-01-01

    Using pulsed magnetron sputtering at low substrate temperature (T s = 580 o C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {111} planes. Besides these defects - which are typical for low-temperature epitaxy - no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed

  18. Temperature and substrate controls on intra-annual variation in ecosystem respiration in two subarctic vegetation types

    DEFF Research Database (Denmark)

    Grogan, Paul; Jonasson, Sven Evert

    2005-01-01

    significantly to ecosystem respiration during most phases of winter and summer in the two vegetation types. Ecosystem respiration rates through the year did not differ significantly between vegetation types despite substantial differences in biomass pools, soil depth and temperature regime. Most (76...... contributions of bulk soil organic matter and plant-associated carbon pools to ecosystem respiration is critical to predicting the response of arctic ecosystem net carbon balance to climate change. In this study, we determined the variation in ecosystem respiration rates from birch forest understory and heath......-92%) of the intra-annual variation in ecosystem respiration rates from these two common mesic subarctic ecosystems was explained using a first-order exponential equation relating respiration to substrate chemical quality and soil temperature. Removal of plants and their current year's litter significantly reduced...

  19. Effect of the substrate temperature on the microstructure and texture of Mg{sub 90}Zr{sub 10} (at.%) films deposited by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Garces, Gerardo [Department of Physical Metallurgy, CENIM, CSIC, Av. De Gregorio del Amo 8, 28040 Madrid (Spain)]. E-mail: ggarces@cenim.csic.es; Landais, Stephan [Office National dEtudes et de Recherches Aerospatiales, ONERA, BP72-29 Avenue de la Division Leclerc F-92322 Chatillon, Paris (France); Adeva, Paloma [Department of Physical Metallurgy, CENIM, CSIC, Av. De Gregorio del Amo 8, 28040 Madrid (Spain)

    2006-11-30

    The microstructure of Mg{sub 90}Zr{sub 10} (at.%) films obtained by sputtering onto copper substrate at three different temperatures (180, 320 and 350 deg. C) has been studied. Films exhibited an intense (0 0 0 1) basal plane fibre texture with the fibre axis parallel to the growth direction. Their microstructure consisted of columnar grains growing from the copper substrate to the free surface which is typical of the zone II of the Movchan and Demchishin zone model developed for PVD materials. Nevertheless, the microstructure of films was dependent on the substrate temperature. The grain diameter increased as the substrate temperature was increased. Moreover, the dislocation density inside the grains as well as that piled-up forming sub-grain boundaries decreased as the deposition temperature increased. Although the film growth in zone II is controlled by surface diffusion the larger surface mobility of the atoms as the substrate temperature increased led to changes in the solubility of zirconium. At low substrate temperatures all zirconium was in solid solution. However, at 350 deg. C the formation of small zirconium particles occurred at grain boundaries.

  20. Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

    Science.gov (United States)

    Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

    2014-01-01

    Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

  1. Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    International Nuclear Information System (INIS)

    Belmeguenai, M.; Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P.; Gabor, M. S.; Petrisor, T.; Tiusan, C.

    2014-01-01

    10 nm and 50 nm Co 2 FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T a ), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T a , while the uniaxial anisotropy field is nearly unaffected by T a within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T a . Finally, the FMR linewidth decreases when increasing T a , due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10 −3 and 1.3×10 −3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

  2. Analysis of temperature profiles and the mechanism of silicon substrate plastic deformation under epitaxial growth

    International Nuclear Information System (INIS)

    Mirkurbanov, H.A.; Sazhnev, S.V.; Timofeev, V.N.

    2004-01-01

    Full text: Thermal treatment of silicon wafers holds one of the major place in the manufacturing of semi-conductor devices. Thermal treatment includes wafer annealing, thermal oxidation, epitaxial growing etc. Quality of wafers in the high-temperature processes (900-1200 deg C) is estimated by the density of structural defects, including areas of plastic deformation, which are shown as the slip lines appearance. Such areas amount to 50-60 % of total wafer surface. The plastic deformation is caused by the thermal stresses. Experimental and theoretical researches allowed to determine thermal balance and to construct a temperature profiles throughout the plate surface. Thermal stresses are caused by temperature drop along the radius of a wafer and at the basic peripheral ring. The threshold temperature drop between center f a wafer and its peripherals (ΔT) for slip lines appearance, amounts to 15-17 deg. C. At the operating temperature of 900-1200 deg. C and ΔT>20 deg. C, the stresses reach the silicon yield point. According to the results of the researches of structure and stress profiles in a wafer, the mechanism of slip lines formation has been constructed. A source of dislocations is the rear broken layer of thickness 8-10 microns, formed after polishing. The micro-fissures with a density 10 5 -10 6 cm -2 are the sources of dislocations. Dislocations move on a surface of a wafer into a slip plane (111). On a wafer surface with orientation (111) it is possible to allocate zones where the tangential stress vector is most favorably directed with respect to a slip plane leaving on a surface, i.e. the shift stresses are maximal in the slip plane. The way to eliminate plastic deformation is to lower the temperature drop to a level of <15 deg. C and elimination of the broken layer in wafer

  3. Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

    Science.gov (United States)

    Nag, Jadupati; Ray, Nirat

    2018-05-01

    Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

  4. Strain rate effects in nuclear steels at room and higher temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Solomos, G. E-mail: george.solomos@jrc.it; Albertini, C.; Labibes, K.; Pizzinato, V.; Viaccoz, B

    2004-04-01

    An investigation of strain rate, temperature and size effects in three nuclear steels has been conducted. The materials are: ferritic steel 20MnMoNi55 (vessel head), austenitic steel X6CrNiNb1810 (upper internal structure), and ferritic steel 26NiCrMo146 (bolting). Smooth cylindrical tensile specimens of three sizes have been tested at strain rates from 0.001 to 300 s{sup -1}, at room and elevated temperatures (400-600 deg. C). Full stress-strain diagrams have been obtained, and additional parameters have been calculated based on them. The results demonstrate a clear influence of temperature, which amounts into reducing substantially mechanical strengths with respect to RT conditions. The effect of strain rate is also shown. It is observed that at RT the strain rate effect causes up shifting of the flow stress curves, whereas at the higher temperatures a mild downshifting of the flow curves is manifested. Size effect tendencies have also been observed. Some implications when assessing the pressure vessel structural integrity under severe accident conditions are considered.

  5. Possible higher order phase transition in large-N gauge theory at finite temperature

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Hiromichi

    2017-08-07

    We analyze the phase structure of SU(¥) gauge theory at finite temperature using matrix models. Our basic assumption is that the effective potential is dominated by double-trace terms for the Polyakov loops. As a function of the temperature, a background field for the Polyakov loop, and a quartic coupling, it exhibits a universal structure: in the large portion of the parameter space, there is a continuous phase transition analogous to the third-order phase transition of Gross,Witten and Wadia, but the order of phase transition can be higher than third. We show that different confining potentials give rise to drastically different behavior of the eigenvalue density and the free energy. Therefore lattice simulations at large N could probe the order of phase transition and test our results. Critical

  6. The Integrity of ACSR Full Tension Single-Stage Splice Connector at Higher Operation Temperature

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jy-An John [ORNL; Lara-Curzio, Edgar [ORNL; King Jr, Thomas J [ORNL

    2008-10-01

    Due to increases in power demand and limited investment in new infrastructure, existing overhead power transmission lines often need to operate at temperatures higher than those used for the original design criteria. This has led to the accelerated aging and degradation of splice connectors. It is manifested by the formation of hot-spots that have been revealed by infrared imaging during inspection. The implications of connector aging is two-fold: (1) significant increases in resistivity of the splice connector (i.e., less efficient transmission of electricity) and (2) significant reductions in the connector clamping strength, which could ultimately result in separation of the power transmission line at the joint. Therefore, the splice connector appears to be the weakest link in electric power transmission lines. This report presents a protocol for integrating analytical and experimental approaches to evaluate the integrity of full tension single-stage splice connector assemblies and the associated effective lifetime at high operating temperature.

  7. Considerations from the viewpoint of neoclassical transport towards higher ion temperature heliotron plasmas

    International Nuclear Information System (INIS)

    Yokoyama, M.; Matsuoka, S.; Funaba, H.; Ida, K.; Nagaoka, K.; Yoshinuma, M.; Takeiri, Y.; Kaneko, O.

    2010-01-01

    The neoclassical (NC) transport analyses have been performed to elucidate the plausible approaches towards higher ion-temperature heliotron plasmas. Avoidance of the ripple transport is the key issue, for which the neoclassical ambipolar radial electric field (E r ) can be utilized. The ion-root scenario and the electron-root scenario are expected to be effective according to the experimental situation (especially, the temperature ratio between ions and electrons). The impact of the ion mass on the neoclassical ambipolar E r is also investigated to reveal the easier realization of electron-root E r in heavier ion plasmas. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Analyzes of students’ higher-order thinking skills of heat and temperature concept

    Science.gov (United States)

    Slamet Budiarti, Indah; Suparmi, A.; Sarwanto; Harjana

    2017-11-01

    High order thinking skills refer to three highest domains of the revised Bloom Taxonomy. The aims of the research were to analyze the student’s higher-order thinking skills of heat and temperature concept. The samples were taken by purposive random sampling technique consisted of 85 high school students from 3 senior high schools in Jayapura city. The descriptive qualitative method was employed in this study. The data were collected by using tests and interviews regarding the subject matters of heat and temperature. Based on the results of data analysis, it was concluded that 68.24% of the students have a high order thinking skills in the analysis, 3.53% of the students have a high order thinking skills in evaluating, and 0% of the students have a high order thinking skills in creation.

  9. Mechanism of a-IGZO TFT device deterioration—illumination light wavelength and substrate temperature effects

    Science.gov (United States)

    Chen, Te-Chih; Kuo, Yue; Chang, Ting-Chang; Chen, Min-Chen; Chen, Hua-Mao

    2017-10-01

    Device characteristics changes in an a-IGZO thin film transistor under light illumination and at raised temperature have been investigated. Light exposure causes a large leakage current, which is more obvious with an increase in the illumination energy, power and the temperature. The increase in the leakage current is due to the trap assisted photon excitation process that generates electron-hole pairs and the mechanism is enhanced with the additional thermal energy. The leakage current comes from the source side because holes generated in the process drift to the source side and therefore lower the barrier height. The above mechanism has been further verified with experiments of drain bias induced shifts in the threshold voltage and the subthreshold slope.

  10. Martensitic Stainless Steels Low-temperature Nitriding: Dependence of Substrate Composition

    OpenAIRE

    Ferreira, Lauro Mariano; Brunatto, Silvio Francisco; Cardoso, Rodrigo Perito

    2015-01-01

    Low-temperature plasma assisted nitriding is a very promising technique to improve surface mechanical properties of stainless steels, keeping unaltered or even improving their surface corrosion resistance. During treatment, nitrogen diffuses into the steel surface, increasing its hardness and wear resistance. In the present work the nitriding process of different martensitic stainless steels was studied. As-quenched AISI 410, 410NiMo, 416 and 420 stainless steel samples were plasma nitrided a...

  11. Critical temperatures of random iron–cobalt overlayers on the fcc-Cu(001) substrate

    Czech Academy of Sciences Publication Activity Database

    Mašín, Martin; Bergqvist, L.; Kudrnovský, Josef; Kotrla, Miroslav; Drchal, Václav

    2013-01-01

    Roč. 26, č. 4 (2013), s. 809-812 ISSN 1557-1939. [International Conference on Superconductivity and Magnetism (ICSM) /3./. Istanbul, 29.04.2012-04.05.2012] R&D Projects: GA ČR GA202/09/0775 Institutional support: RVO:68378271 Keywords : Curie temperature * random overlayer * Heisenberg Hamiltonian * first principles * Monte Carlo simulations Subject RIV: BE - Theoretical Physics Impact factor: 0.930, year: 2013 http://link.springer.com/article/10.1007/s10948-012-2084-1

  12. Temperature dependent IDS–VGS characteristics of an N-channel Si tunneling field-effect transistor with a germanium source on Si(110) substrate

    International Nuclear Information System (INIS)

    Liu Yan; Yan Jing; Wang Hongjuan; Han Genquan

    2014-01-01

    We fabricated n-type Si-based TFETs with a Ge source on Si(110) substrate. The temperature dependent I DS –V GS characteristics of a TFET formed on Si(110) are investigated in the temperature range of 210 to 300 K. A study of the temperature dependence of I Leakage indicates that I Leakage is mainly dominated by the Shockley-Read-Hall (SRH) generation—recombination current of the n + drain—Si substrate junction. I ON increases monotonically with temperature, which is attributed to a reduction of the bandgap at the tunneling junction and an enhancement of band-to-band tunneling rate. The subthreshold swing S for trap assisted tunneling (TAT) current and band-to-band tunneling (BTBT) current shows the different temperature dependence. The subthreshold swing S for the TAT current degrades with temperature, while the S for BTBT current is temperature independent. (semiconductor devices)

  13. Characterization of porous stainless steel 430 for low and intermediate temperature solid oxide fuel cell substrates

    Energy Technology Data Exchange (ETDEWEB)

    Rose, L. [National Research Council of Canada, Vancouver, BC (Canada). Inst. for Fuel Cell Innovation; British Columbia Univ., Vancouver, BC (Canada). Dept. of Materials Engineering; Deces-Petit, C.; Sobolyeva, T.; Maric, R. [National Research Council of Canada, Vancouver, BC (Canada). Inst. for Fuel Cell Innovation; Troczynski, T. [British Columbia Univ., Vancouver, BC (Canada). Dept. of Materials Engineering; Kesler, O. [Toronto Univ., ON (Canada). Dept. of Mechanical and Industrial Engineering

    2009-07-01

    In order to lower the cost of solid oxide fuel cells (SOFCs), the operating temperatures could be lowered below 1073 K to allow the use of robust and comparatively inexpensive stainless steels not only for interconnects but also for SOFC support structures. To facilitate gas flow towards the reactive sites in the electrodes, the metal supports must be adequately porous. Gas flow and electrical conductivity must remain adequate during any oxidation that occurs during operation. This paper discussed a series of gas permeation and surface profilometry experiments that were conducted to determine the permeability and surface roughness of porous steels having different pore structures. The purpose of the study was to identify microstructures most suitable for use as SOFC supports. The materials were also characterized by a variety of porosity measurement methods, each yielding complementary information on the three dimensional structures. The paper described the experimental methods as well as the results and discussion of results in terms of surface profilometry, porosity analyses, pore morphology and gas permeability. It was concluded that a material with more than 20 per cent total porosity that does not close during oxidation and with a surface roughness of less than 8 micrometres appears to be a good candidate structure for intermediate temperature SOFCs. 8 refs., 8 figs.

  14. Facile fabrication of silver nanoparticles with temperature-responsive sizes as highly active SERS substrates

    Science.gov (United States)

    Wu, Jing; Fang, Jinghuai; Cheng, Mingfei; Gong, Xiao

    2016-12-01

    In our work, large-scale silver NPs (nanoparticles) are successfully synthesized on zinc foils with controllable size by regulating the temperature of the displacement reaction. Our results show that when the temperature is 70 °C, the average size of silver NPs is approximately 88 nm in diameter, and they exhibit the strongest SERS activity. The gap between nanoparticles is simultaneously regulated as near as possible, which produces abundant "hot spots" and nanogaps. Crystal violet (CV) was used as probe molecules, and the SERS signals show that the values of relative standard deviation in the intensity of the main vibration modes are less than 10%, demonstrating excellent reproducibility of the silver NPs. Furthermore, the high surface-average enhancement factor of 3.86 × 107 is achieved even when the concentration of CV is 10-7 M, which is sufficient for single-molecule detection. We believe that this low cost and rapid route would get wide applications in chemical synthesis.

  15. Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates

    Science.gov (United States)

    Bonilla, Manuel; Kolekar, Sadhu; Ma, Yujing; Diaz, Horacio Coy; Kalappattil, Vijaysankar; Das, Raja; Eggers, Tatiana; Gutierrez, Humberto R.; Phan, Manh-Huong; Batzill, Matthias

    2018-04-01

    Reduced dimensionality and interlayer coupling in van der Waals materials gives rise to fundamentally different electronic1, optical2 and many-body quantum3-5 properties in monolayers compared with the bulk. This layer-dependence permits the discovery of novel material properties in the monolayer regime. Ferromagnetic order in two-dimensional materials is a coveted property that would allow fundamental studies of spin behaviour in low dimensions and enable new spintronics applications6-8. Recent studies have shown that for the bulk-ferromagnetic layered materials CrI3 (ref. 9) and Cr2Ge2Te6 (ref. 10), ferromagnetic order is maintained down to the ultrathin limit at low temperatures. Contrary to these observations, we report the emergence of strong ferromagnetic ordering for monolayer VSe2, a material that is paramagnetic in the bulk11,12. Importantly, the ferromagnetic ordering with a large magnetic moment persists to above room temperature, making VSe2 an attractive material for van der Waals spintronics applications.

  16. Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

    Directory of Open Access Journals (Sweden)

    Skonieczny R.

    2016-09-01

    Full Text Available The cobalt phthalocyanine (CoPc thin films (300 nm thick deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing of metallophthalocyanine (α and β form from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

  17. Effects of the Substrate Temperature in AuN Thin Films by Means of X-Ray Diffraction

    Science.gov (United States)

    Devia, A.; Benavides, V.; Castillo, H. A.; Quintero, J.

    2006-12-01

    Gold is used in electronic industry like electric conductor for products such as computers, mobiles phones, etc; with the drawback that it is one of the most expensive metals in the market. Gold Nitride is a new material, having excellent physics properties like high hardness, high melting point, high electric conductivity, chemical inertia and good thermodynamic stabily among others. At the moment its study is more about electronics, optics, mechanical properties and growth of the films. AuN thin films were produced by the PAPVD (Plasma assisted Physics Vapor Deposition) method, using the pulsed arc technique in a mono-vaporizer system. These films were created with an Au target of 99% purity and deposited on stainless steel 304. It was observed that heating the substrate produces small stoichiometric changes in the film, which makes small changes in the diffraction patterns to appear, like widening in the Au orientation, since the composicional gradient is varying according to the substrate temperature. Au 4f and N1s narrow spectra were analyzed using XPS (X-Ray Photoelectron Spectroscopy), in order to observe stoichiometry in the films.

  18. Effects of the Substrate Temperature in AuN Thin Films by Means of X-Ray Diffraction

    International Nuclear Information System (INIS)

    Devia, A.; Benavides, V.; Castillo, H. A.; Quintero, J.

    2006-01-01

    Gold is used in electronic industry like electric conductor for products such as computers, mobiles phones, etc; with the drawback that it is one of the most expensive metals in the market. Gold Nitride is a new material, having excellent physics properties like high hardness, high melting point, high electric conductivity, chemical inertia and good thermodynamic stabily among others. At the moment its study is more about electronics, optics, mechanical properties and growth of the films. AuN thin films were produced by the PAPVD (Plasma assisted Physics Vapor Deposition) method, using the pulsed arc technique in a mono-vaporizer system. These films were created with an Au target of 99% purity and deposited on stainless steel 304. It was observed that heating the substrate produces small stoichiometric changes in the film, which makes small changes in the diffraction patterns to appear, like widening in the Au orientation, since the composicional gradient is varying according to the substrate temperature. Au 4f and N1s narrow spectra were analyzed using XPS (X-Ray Photoelectron Spectroscopy), in order to observe stoichiometry in the films

  19. Data on the detail information of influence of substrate temperature on the film morphology and photovoltaic performance of non-fullerene organic solar cells.

    Science.gov (United States)

    Zhang, Jicheng; Xie, SuFei; Lu, Zhen; Wu, Yang; Xiao, Hongmei; Zhang, Xuejuan; Li, Guangwu; Li, Cuihong; Chen, Xuebo; Ma, Wei; Bo, Zhishan

    2017-10-01

    This data contains additional data related to the article "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" (Jicheng Zhang et al., In press) [1]. Data include measurement and characterization instruments and condition, detail condition to fabricate norfullerene solar cell devices, hole-only and electron-only devices. Detail condition about how to control the film morphology of devices via tuning the temperature of substrates was also displayed. More information and more convincing data about the change of film morphology for active layers fabricated from different temperature, which is attached to the research article of "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" was given.

  20. Influence of substrate temperature and post annealing of CuGaO2 thin films on optical and structural properties

    International Nuclear Information System (INIS)

    Bakar, Muhammad Hafiz Abu; Li, Lam Mui; Salleh, Saafie; Alias, Afishah; Mohamad, Khairul Anuar; Sulaiman, Salina

    2015-01-01

    A transparent p-type thin film CuGaO 2 was deposited by using RF sputtering deposition method on plastic (PET) and glass substrate. The characteristics of the film is investigated. The thin film was deposited at temperature range from 50-250°C and the pressure inside the chamber is 1.0×10 −2 Torr and Argon gas was used as a working gas. The RF power is set to 100 W. The thickness of thin film is 300nm. In this experiment the transparency of the thin film is more than 70% for the visible light region. The band gap obtain is between 3.3 to 3.5 eV. The details of the results will be discussed in the conference

  1. Comparison of higher irradiance and black panel temperature UV backsheet exposures to field performance

    Science.gov (United States)

    Felder, Thomas C.; Gambogi, William J.; Phillips, Nancy; MacMaster, Steven W.; Yu, Bao-Ling; Trout, T. John

    2017-08-01

    The need for faster PV qualification tests that more accurately match field observations is leading to tests with higher acceleration levels, and validating the new tests through comparison to field data is an important step. We have tested and compared a wide panel of backsheets according to a proposed new backsheet UV exposure qualification standard from the International Electrotechnical Commission (IEC). Weathering Technical Standard IEC 62788-7-2 specifies higher irradiance and higher black panel temperature UV Xenon exposures. We tested PVF, PVDF, PET, PA and FEVEbased backsheets in glass laminates and simple backsheet coupons in UV exposure condition A3 (0.8W/sqmnm@340nm and 90° C BPT) We find mild yellowing with no mechanical loss in the original lower intensity ASTM G155 0.55 W/sqm-nm 70C BPT exposure condition. The new A3 exposures creates mechanical loss in sensitive backsheets, with no effect on known durable backsheets. Results from the new exposure are closer to field mechanical loss data.

  2. Growth, Structural and Optical Characterization of ZnO Nanotubes on Disposable-Flexible Paper Substrates by Low-Temperature Chemical Method

    Directory of Open Access Journals (Sweden)

    M. Y. Soomro

    2012-01-01

    Full Text Available We report the synthesis of vertically aligned ZnO nanotubes (NTs on paper substrates by low-temperature hydrothermal method. The growth of ZnO NTs on the paper substrate is discussed; further, the structural and optical properties are investigated by scanning electron microscope (SEM, transmission electron microscopy (TEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDS, and cathodoluminescence (CL, and it was found that the ZnO NTs on paper substrate fulfill the structural and optical properties of ZnO NTs grown on other conventional substrates. This will be more beneficial in future usage of ZnO NTs in different fields and applications. Particularly, this approach opens the ways in research and development for high volume manufacturing of low-cost, flexible optoelectronics devices on disposable paper substrates and can be used in the future miniaturization trends.

  3. Higher acclimation temperature modulates the composition of muscle fatty acid of Tor putitora juveniles

    Directory of Open Access Journals (Sweden)

    M.S. Akhtar

    2014-08-01

    Full Text Available A 30-day acclimation trial was conducted using golden mahseer, Tor putitora juveniles to study its muscle fatty acid composition at five acclimation temperatures (AT. Ninety juveniles of T. putitora were distributed among five treatment groups (20, 23, 26, 29 and 32±0.5 °C. At the end of 30 days trial, highest percentage of monounsaturated fatty acids was found at 20 °C and lowest at 26 °C. The highest percentage of n-6 polyunsaturated fatty acid (PUFA was found at 23 °C and a decreasing trend was observed with increase in AT. However, highest percentage of n-3 PUFA was found at 32 °C and lowest at 29 °C. The maximum n-6 to n-3 ratio was observed at 23 °C and ratio decreased to a minimum at 32 °C. The results revealed that T. putitora juveniles could adapt to higher acclimation temperatures by altering its muscle fatty acid composition mainly by increasing its total saturated fatty acids especially stearic acid.

  4. Microstructure and High-temperature Wear Behavior of Hot-dipped Aluminized Coating on Different Substrate Materials

    Directory of Open Access Journals (Sweden)

    ZHOU De-qin

    2018-02-01

    Full Text Available The aluminized 45 and H13 steel were prepared via hot-dipped aluminizing and subsequently high-temperature diffusion treatment. The phase, morphology and composition of aluminized coating were characterized by XRD,SEM and EDS methods. Comparative study was performed on unlubricated sliding wear behavior of plating under different substrates on a pin-on-disc wear tester, and the wear mechanism was explored. The results show that the coating is composed of ductile phases FeAl and Fe3Al. Kikendall porosity parallel to the surface exists around the interface of the two phases; because of the carbide particles agglomeration, the bond between the coating and H13 steel is apparently inferior to that in the case of 45 steel; the aluminized 45 steel possesses an excellent wear resistance under 50-200N at 400℃, whereas mild-to-severe wear transition occurs when the temperature increases to 600℃. The wear rate of the aluminized H13 steel reaches the lowest at 400℃, then slightly increases at 600℃. The wear mechanisms of Fe-Al coating are mainly predominated by oxidative mild wear, whereas the extrusion wear prevails in the process for aluminized 45 steel at 600℃.

  5. Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

    Directory of Open Access Journals (Sweden)

    Lei Wen

    2011-01-01

    Full Text Available Abstract Catalyst-free, vertical array of InAs nanowires (NWs are grown on Si (111 substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed. PACS: 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km

  6. Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

    Science.gov (United States)

    Aikawa, Masaki; Onuki, Yuya; Hayasaka, Natsuki; Nishiyama, Tetsuo; Kamada, Naoki; Han, Xu; Kallarasan Periyanayagam, Gandhi; Uchida, Kazuki; Sugiyama, Hirokazu; Shimomura, Kazuhiko

    2018-02-01

    The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

  7. A novel low-temperature-active β-glucosidase from symbiotic Serratia sp. TN49 reveals four essential positions for substrate accommodation.

    Science.gov (United States)

    Zhou, Junpei; Zhang, Rui; Shi, Pengjun; Huang, Huoqing; Meng, Kun; Yuan, Tiezheng; Yang, Peilong; Yao, Bin

    2011-10-01

    A 2,373-bp full-length gene (bglA49) encoding a 790-residue polypeptide (BglA49) with a calculated mass of 87.8 kDa was cloned from Serratia sp. TN49, a symbiotic bacterium isolated from the gut of longhorned beetle (Batocera horsfieldi) larvae. The deduced amino acid sequence of BglA49 showed the highest identities of 80.1% with a conceptually translated protein from Pantoea sp. At-9b (EEW02556), 38.3% with the identified glycoside hydrolase (GH) family 3 β-glucosidase from Clostridium stercorarium NCBI 11754 (CAB08072), and sp. G5 (ABL09836) and Paenibacillus sp. C7 (AAX35883). The recombinant enzyme (r-BglA49) was expressed in Escherichia coli and displayed the typical characteristics of low-temperature-active enzymes, such as low temperature optimum (showing apparent optimal activity at 35°C), activity at low temperatures (retaining approximately 60% of its maximum activity at 20°C and approximately 25% at 10°C). Compared with the thermophilic GH 3 β-glucosidase, r-BglA49 had fewer hydrogen bonds and salt bridges and less proline residues. These features might relate to the increased structure flexibility and higher catalytic activity at low temperatures of r-BglA49. The molecular docking study of four GH 3 β-glucosidases revealed five conserved positions contributing to substrate accommodation, among which four positions of r-BglA49 (R192, Y228, D260, and E449) were identified to be essential based on site-directed mutagenesis analysis.

  8. Morphology and electronic transport of polycrystalline silicon films deposited by SiF sub 4 /H sub 2 at a substrate temperature of 200 deg. C

    CERN Document Server

    Hazra, S; Ray, S

    2002-01-01

    Undoped and phosphorous doped polycrystalline silicon (poly-Si) films were deposited using a SiF sub 4 /H sub 2 gas mixture at a substrate temperature of 200 deg. C by radio frequency plasma enhanced chemical vapor deposition (rf-PECVD). Fourier transform infrared (FTIR) spectroscopy and x-ray diffraction (XRD) experiments reveal that the present poly-Si films are equivalent to the poly-Si films deposited at high temperature (>600 deg. C). XRD and scanning electron microscope observations show that the crystalline quality of slightly P-doped film is better compared to that of undoped poly-Si films. Phosphorus atom concentration in the slightly P-doped poly-Si film is 5.0x10 sup 1 sup 6 atoms/cm sup 3. Association of a few phosphorous atoms in the silicon matrix enhances crystallization as eutectic-forming metals do. Dark conductivity of slightly P-doped film is 4 orders of magnitude higher, although mobility-lifetime product (eta mu tau) is 2 orders of magnitude lower than that of undoped film. The presence o...

  9. A highly sensitive solid substrate room temperature phosphorimetry for carbaryl detection based on its activating effect on NaIO4 oxidizing fluorescein.

    Science.gov (United States)

    Liu, Jiaming; Huang, Qitong; Liu, Zhen-bo; Lin, Xiaofeng; Zhang, Li-Hong; Lin, Chang-Qing; Zheng, Zhi-Yong

    2014-11-01

    Fluorescein (HFin) could emit strong and stable room temperature phosphorescence (RTP) signal on polyamide membrane (PAM) using Pb(2+) as the ion perturber. Carbaryl could activate effect on NaIO4 oxidating HFin, which caused the RTP signal of the system to quench sharply. The phosphorescence intensity (ΔI p) of activating system higher 3.3 times (119.4/36.0) than that of non-activating system, and is directly proportional to the content of carbaryl. Thus, an activating solid substrate room temperature phosphorimetry (SSRTP) for carbaryl detection has been established. This sensitive (the limit of quantification (LOQ) was 2.0 × 10(-13) g mL(-1)), selective, simple and rapid method has been applied to determine trace carbaryl in water samples with the results consisting with those obtained by fluorimetry, showing its high accuracy. The apparent activation energy (E) and rate constant (k) of this activating reaction were 20.77 kJ mol(-1) and 1.85 × 10(-4) s(-1), respectively. Meanwhile, the mechanism of activating SSRTP for carbaryl detection was also discussed using infrared spectra (IR).

  10. Photoelectrochemical properties of In{sub 2}Se{sub 3} thin films: Effect of substrate temperature

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in [Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur, M.S. 413512 (India); Salunke, S.D. [Department of Chemistry and Analytical Chemistry, Rajarshi Shahu Mahavidyalaya, Latur, M.S. 413512 (India)

    2015-08-15

    Highlights: • Photoelectrochemical properties of In{sub 2}Se{sub 3} thin films. • In{sub 2}Se{sub 3} films are of n-type with I{sub sc} and V{sub oc} of 1.05 mA/cm{sup 2} and 261 mV respectively. • Efficiency (η) and fill factor (FF) is found to be 0.71% and 0.51% respectively. • Performance of cell can motivate further studies concerning solar energy conversion. - Abstract: In{sub 2}Se{sub 3} thin films have been deposited onto fluorine doped tin oxide coated (FTO) glass substrates at various substrate temperatures by spray pyrolysis. The photoelectrochemical cell configurations were In{sub 2}Se{sub 3} thin film/1 M (NaOH + Na{sub 2}S + S)/C. From capacitance–voltage (C–V) and current–voltage (I–V) characteristics; it is concluded that In{sub 2}Se{sub 3} thin films are of n-type. The Fill factor (FF) and solar conversion efficiency (η) were calculated from photovoltaic power output characteristics. In this instance, the highest measured photocurrent density of 1.05 mA/cm{sup 2} and open circuit voltage of 261 mV is observed for film deposited at 350 °C resulting in maximum power conversion efficiency (η) and fill factor (FF) to be 0.71% and 0.51% respectively. Electrochemical impedance spectroscopy study shows that the In{sub 2}Se{sub 3} film deposited at 350 °C shows better performance in photoelectrochemical cell. The performance of indium selenide thin film observed in our work can motivate further studies concerning solar energy conversion.

  11. One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates.

    Science.gov (United States)

    Jiang, Shenglin; Zeng, Yike; Zhou, Wenli; Miao, Xiangshui; Yu, Yan

    2016-01-14

    Graphene deposited on various substrates has attracted the attention of the scientific and technical communities for use in a wide range of applications. Graphene on substrates is commonly produced by two types of methods, namely, methods that require a transfer step and transfer-free methods. Compared with methods that require a transfer step, transfer-free methods have a simpler procedure and a lower cost. Thus, transfer-free methods have considerable potential to meet the industrial and commercial demands of production methods. However, some limitations of the current transfer-free methods must be overcome, such as the high temperatures encountered during production, the relatively long manufacturing times, incompatibilities for both rigid and flexible substrates, and an inability to extend the process to other two-dimensional (2-D) atomic crystals. In this work, a room-temperature rubbing method is developed for the rapid transfer-free production of defect-free polycrystalline graphene on rigid and flexible substrates. Starting with inexpensive commercially obtained graphite powder, mono- and few-layer graphene can be fabricated directly on various substrates, with an average production time of less than one minute (from raw graphite to graphene on the substrate). Importantly, this method can be extended to other 2-D atomic crystals.

  12. Influence of substrate temperature and annealing on structural and optical properties of TiO{sub 2} films deposited by reactive e-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Pjević, D., E-mail: dejanp@vinca.rs [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Marinković, T.; Savić, J.; Bundaleski, N.; Obradović, M.; Milosavljević, M. [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Kulik, M. [Frank Laboratory of Neutron Physics, JINR, Joliot-Curie St. 6, Dubna 141980, Moscow Region (Russian Federation)

    2015-09-30

    The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO{sub 2} thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200–400 °C heated substrates. Post-deposition annealing was done for 3 h at 500 °C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet–visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O ~ 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase–rutile mixed films were obtained, and in some cases TiO and Ti{sub 2}O{sub 3} phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO{sub 2} thin films with defined structure and optical properties. - Highlights: • TiO{sub 2} films were deposited by reactive e-beam evaporation. • Structure and properties were studied as a function of deposition temperature. • Stoichiometry of as-deposited films was Ti:O ~ 1:2, containing different Ti-O phases. • Post-deposition annealing yielded phase transformation, affecting the properties. • Refractive index increases with the substrate deposition temperature.

  13. Ultra smooth NiO thin films on flexible plastic (PET) substrate at room temperature by RF magnetron sputtering and effect of oxygen partial pressure on their properties

    International Nuclear Information System (INIS)

    Nandy, S.; Goswami, S.; Chattopadhyay, K.K.

    2010-01-01

    Transparent p-type nickel oxide thin films were grown on polyethylene terephthalate (PET) and glass substrates by RF magnetron sputtering technique in argon + oxygen atmosphere with different oxygen partial pressures at room temperature. The morphology of the NiO thin films grown on PET and glass substrates was studied by atomic force microscope. The rms surface roughnesses of the films were in the range 0.63-0.65 nm. These ultra smooth nanocrystalline NiO thin films are useful for many applications. High resolution transmission electron microscopic studies revealed that the grains of NiO films on the highly flexible PET substrate were purely crystalline and spherical in shape with diameters 8-10 nm. XRD analysis also supported these results. NiO films grown on the PET substrates were found to have better crystalline quality with fewer defects than those on the glass substrates. The sheet resistances of the NiO films deposited on PET and glass substrates were not much different; having values 5.1 and 5.3 kΩ/□ and decreased to 3.05, 3.1 kΩ/□ respectively with increasing oxygen partial pressure. The thicknesses of the films on both substrates were ∼700 nm. It was also noted that further increase in oxygen partial pressure caused increase in resistivity due to formation of defects in NiO.

  14. Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors

    Science.gov (United States)

    Yang, Qizhi; Fang, Jiajia; Zhang, Guangru; Wang, Quan

    2018-03-01

    The use of two-dimensional nanostructured molybdenum disulfide (MoS2) films in field-effect transistors (FETs) in place of graphene was investigated. Monolayer MoS2 films were fabricated by chemical vapor deposition. The output and transfer curves of supported and suspended MoS2 FETs were measured. The mobility of the suspended device reached 364.2 cm2 V-1 s-1 at 150 °C. The hysteresis of the supported device in transfer curves was much larger than that of the suspended device, and it increased at higher temperatures. These results indicate that the device mobility was limited by Coulomb scattering at ambient temperature, and surface/interface phonon scattering at 150 °C, and the injection of electrons, via quantum tunneling through the Schottky barrier at the contact, was enhanced at higher temperatures and led to the increase of the hysteresis. The suspended MoS2 films show potential for application as a channel material in electronic devices, and further understanding the causes of hysteresis in a material is important for its use in technologies, such as memory devices and sensing cells.

  15. Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process

    International Nuclear Information System (INIS)

    Wang, D.; Ii, S.; Ikeda, K.; Nakashima, H.; Matsumoto, K.; Nakamae, M.; Nakashima, H.

    2006-01-01

    Crystal qualities were evaluated by photoluminescence (PL) and transmission electron microscopy (TEM) for cap-Si/SiGe/Si-on-insulater (SOI) structure, which is the typical structure for SiGe-on-insulator virtual substrate fabrication using the Ge condensation by dry oxidation. The thicknesses of cap-Si, SOI and BOX layers are 10, 70, and 140 nm, respectively. We have three kinds of wafers with SiGe thicknesses of 74, 154 and 234 nm. All of the wafers were heated from 200 deg.C to a target temperature (T t ) in the range of 820-1200 deg. C with a ramping rate of 5 deg. C/min, and maintained at T t for 10 min. The air in the furnace was a mixture of O 2 and N 2 . The PL measurements were carried out using a 325 nm UV line of a continuous-wave HeCd laser. Free exciton peaks were clearly observed for the as-grown wafers and decreased with an increase in the annealing temperature. For the selected wafers, cross-sectional and plan-view TEM measurements show clear generation and variation of dislocations at the interface of SiGe/SOI according to the T t . Defect-related PL signals were observed at around 0.82, 0.88, 0.95 and 1.0 eV, which also varied according to the T t and the SiGe thickness. They were identified to dislocation-related and stacking-fault-related defects by TEM

  16. Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

    International Nuclear Information System (INIS)

    Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

    2013-01-01

    Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

  17. Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

  18. Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

    Science.gov (United States)

    El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

    2013-09-01

    Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

  19. High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate

    KAUST Repository

    Qian, Ling-Xuan; Zhang, Hua-Fan; Lai, P. T.; Wu, Ze-Han; Liu, Xing-Zhao

    2017-01-01

    -annealing temperature must be sufficiently high to offset the rise of the dark current and thus achieve a remarkable improvement in the photodetection properties. As a result, the PD fabricated on the 1050 degrees C-annealed substrate exhibited extremely high

  20. Influence of sulfurization temperature on Cu2ZnSnS4 absorber layer on flexible titanium substrates for thin film solar cells

    Science.gov (United States)

    Gokcen Buldu, Dilara; Cantas, Ayten; Turkoglu, Fulya; Gulsah Akca, Fatime; Meric, Ece; Ozdemir, Mehtap; Tarhan, Enver; Ozyuzer, Lutfi; Aygun, Gulnur

    2018-02-01

    In this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.

  1. Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

    Science.gov (United States)

    Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

    2016-02-10

    Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

  2. Substrate Integrated Waveguide Based Phase Shifter and Phased Array in a Ferrite Low Temperature Co-fired Ceramic Package

    KAUST Repository

    Nafe, Ahmed A.

    2014-03-01

    Phased array antennas, capable of controlling the direction of their radiated beam, are demanded by many conventional as well as modern systems. Applications such as automotive collision avoidance radar, inter-satellite communication links and future man-portable satellite communication on move services require reconfigurable beam systems with stress on mobility and cost effectiveness. Microwave phase shifters are key components of phased antenna arrays. A phase shifter is a device that controls the phase of the signal passing through it. Among the technologies used to realize this device, traditional ferrite waveguide phase shifters offer the best performance. However, they are bulky and difficult to integrate with other system components. Recently, ferrite material has been introduced in Low Temperature Co-fired Ceramic (LTCC) multilayer packaging technology. This enables the integration of ferrite based components with other microwave circuitry in a compact, light-weight and mass producible package. Additionally, the recent concept of Substrate Integrated Waveguide (SIW) allowed realization of synthesized rectangular waveguide-like structures in planar and multilayer substrates. These SIW structures have been shown to maintain the merits of conventional rectangular waveguides such as low loss and high power handling capabilities while being planar and easily integrable with other components. Implementing SIW structures inside a multilayer ferrite LTCC package enables monolithic integration of phase shifters and phased arrays representing a true System on Package (SoP) solution. It is the objective of this thesis to pursue realizing efficient integrated phase shifters and phased arrays combining the above mentioned technologies, namely Ferrite LTCC and SIW. In this work, a novel SIW phase shifter in ferrite LTCC package is designed, fabricated and tested. The device is able to operate reciprocally as well as non-reciprocally. Demonstrating a measured maximum

  3. Plastic substrates for active matrix liquid crystal display incapable of withstanding processing temperature of over 200 C and method of fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Carey, P.G.; Smith, P.M.; Havens, J.H.; Jones, P.

    1999-01-05

    Bright-polarizer-free, active-matrix liquid crystal displays (AMLCDs) are formed on plastic substrates. The primary components of the display are a pixel circuit fabricated on one plastic substrate, an intervening liquid-crystal material, and a counter electrode on a second plastic substrate. The-pixel circuit contains one or more thin-film transistors (TFTs) and either a transparent or reflective pixel electrode manufactured at sufficiently low temperatures to avoid damage to the plastic substrate. Fabrication of the TFTs can be carried out at temperatures less than 100 C. The liquid crystal material is a commercially made nematic curvilinear aligned phase (NCAP) film. The counter electrode is comprised of a plastic substrate coated with a transparent conductor, such as indium-doped tin oxide (ITO). By coupling the active matrix with NCAP, a high-information content can be provided in a bright, fully plastic package. Applications include any low cost portable electronics containing flat displays where ruggedization of the display is desired. 12 figs.

  4. Plastic substrates for active matrix liquid crystal display incapable of withstanding processing temperature of over 200.degree. C and method of fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Havens, John (San Diego, CA); Jones, Phil (Marlborough, GB)

    1999-01-01

    Bright-polarizer-free, active-matrix liquid crystal displays (AMLCDs) are formed on plastic substrates. The primary components of the display are a pixel circuit fabricated on one plastic substrate, an intervening liquid-crystal material, and a counter electrode on a second plastic substrate. The-pixel circuit contains one or more thin-film transistors (TFTs) and either a transparent or reflective pixel electrode manufactured at sufficiently low temperatures to avoid damage to the plastic substrate. Fabrication of the TFTs can be carried out at temperatures less than 100.degree. C. The liquid crystal material is a commercially made nematic curvilinear aligned phase (NCAP) film. The counter electrode is comprised of a plastic substrate coated with a transparent conductor, such as indium-doped tin oxide (ITO). By coupling the active matrix with NCAP, a high-information content can be provided in a bright, fully plastic package. Applications include any low cost portable electronics containing flat displays where ruggedization of the display is desired.

  5. The interaction of C60 on Si(111 7x7 studied by Supersonic Molecular Beams: interplay between precursor kinetic energy and substrate temperature in surface activated processes.

    Directory of Open Access Journals (Sweden)

    Lucrezia eAversa

    2015-06-01

    Full Text Available Buckminsterfullerene (C60 is a molecule fully formed of carbon that can be used, owing to its electronic and mechanical properties, as clean precursor for the growth of carbon-based materials, ranging from -conjugated systems (graphenes to synthesized species, e.g. carbides such as silicon carbide (SiC. To this goal, C60 cage rupture is the main physical process that triggers material growth. Cage breaking can be obtained either thermally by heating up the substrate to high temperatures (630°C, after C60 physisorption, or kinetically by using Supersonic Molecular Beam Epitaxy (SuMBE techniques. In this work, aiming at demonstrating the growth of SiC thin films by C60 supersonic beams, we present the experimental investigation of C60 impacts on Si(111 7x7 kept at 500°C for translational kinetic energies ranging from 18 to 30 eV. The attained kinetically activated synthesis of SiC submonolayer films is probed by in-situ surface electron spectroscopies (XPS and UPS. Furthermore, in these experimental conditions the C60-Si(111 7×7 collision has been studied by computer simulations based on a tight-binding approximation to Density Functional Theory, DFT. Our theoretical and experimental findings point towards a kinetically driven growth of SiC on Si, where C60 precursor kinetic energy plays a crucial role, while temperature is relevant only after cage rupture to enhance Si and carbon reactivity. In particular, we observe a counterintuitive effect in which for low kinetic energy (below 22 eV, C60 bounces back without breaking more effectively at high temperature due to energy transfer from excited phonons. At higher kinetic energy (22 < K < 30 eV, for which cage rupture occurs, temperature enhances reactivity without playing a major role in the cage break. These results are in good agreement with ab-initio molecular dynamics simulations. SuMBE is thus a technique able to drive materials growth at low temperature regime.

  6. Clamping effect on the piezoelectric responses of screen-printed low temperature PZT/Polymer films on flexible substrates

    Science.gov (United States)

    Almusallam, A.; Yang, K.; Zhu, D.; Torah, R. N.; Komolafe, A.; Tudor, J.; Beeby, S. P.

    2015-11-01

    This paper introduces a new flexible lead zirconate titanate (PZT)/polymer composite material that can be screen-printed onto fabrics and flexible substrates, and investigates the clamping effect of these substrates on the characterization of the piezoelectric material. Experimental results showed that the optimum blend of PZT/polymer binder with a weight ratio of 12:1 provides a dielectric constant of 146. The measured value of the piezoelectric coefficient d33 was found to depend on the substrate used. Measured d33clp values of 70, 40, 36 pC N-1 were obtained from the optimum formulation printed on Polyester-cotton with an interface layer, Kapton and alumina substrates, respectively. The variation in the measured d33clp values occurs because of the effect of the mechanical boundary conditions of the substrate. The piezoelectric film is mechanically bonded to the surface of the substrate and this constrains the film in the plane of the substrate (the 1-direction). This constraint means that the perpendicular forces (applied in the 3-direction) used to measure d33 introduce a strain in the 1-direction that produces a charge of the opposite polarity to that induced by the d33 effect. This is due to the negative sign of the d31 coefficient and has the effect of reducing the measured d33 value. Theoretical and experimental investigations confirm a reduction of 13%, 50% and 55% in the estimated freestanding d33fs values (80 pC N-1) on Polyester-cotton, Kapton and alumina substrates, respectively. These results demonstrate the effect of the boundary conditions of the substrate/PZT interface on the piezoelectric response of the PZT/polymer film and in particular the reduced effect of fabric substrates due to their lowered stiffness.

  7. Can Personal Exposures to Higher Nighttime and Early Morning Temperatures Increase Blood Pressure?

    Science.gov (United States)

    Environmental temperatures are inversely related to BP; however, the effects of short-term temperature changes within a 24-hour period and measured with high accuracy at the personal level have not been described. Fifty-one nonsmoking patients living in the Detroit area had up to...

  8. Effect of higher temperature exposure on physicochemical properties of frozen buffalo meat

    Directory of Open Access Journals (Sweden)

    M. R. Vishnuraj

    2014-11-01

    Full Text Available Aim: The aim was to study the changes in various physicochemical parameters of frozen buffalo meat undergone temperature abuse at two different isothermal storage temperatures (37±1°C, 25±1°C using a simulated model. Materials and Methods: Frozen buffalo meat was evaluated after exposing to various temperature abuse conditions over selected durations for different meat quality parameters including pH, extract release volume (ERV, flourescein diacetate (FDA hydrolysis, free amino acid (FAA, total volatile basic nitrogen (TVBN and D-glucose value and compared against a control sample maintained at 4±1°C. Results: Of the various meat quality parameters evaluated pH, FDA hydrolysis, FAA content and TVBN content showed a significant (p<0.05 increase in temperature abused samples after temperature abuse and on subsequent refrigerated storage. However, ERV and D-glucose content decreased significantly (p<0.05 in temperature abused buffalo meat during the same period of study. Conclusions: The present study featured the influence of exposure temperature and duration in various physicochemical parameters and the rate of spoilage development in frozen buffalo meat after temperature abuse.

  9. Is the boundary layer of an ionic liquid equally lubricating at higher temperature?

    Science.gov (United States)

    Hjalmarsson, Nicklas; Atkin, Rob; Rutland, Mark W

    2016-04-07

    Atomic force microscopy has been used to study the effect of temperature on normal forces and friction for the room temperature ionic liquid (IL) ethylammonium nitrate (EAN), confined between mica and a silica colloid probe at 25 °C, 50 °C, and 80 °C. Force curves revealed a strong fluid dynamic influence at room temperature, which was greatly reduced at elevated temperatures due to the reduced liquid viscosity. A fluid dynamic analysis reveals that bulk viscosity is manifested at large separation but that EAN displays a nonzero slip, indicating a region of different viscosity near the surface. At high temperatures, the reduction in fluid dynamic force reveals step-like force curves, similar to those found at room temperature using much lower scan rates. The ionic liquid boundary layer remains adsorbed to the solid surface even at high temperature, which provides a mechanism for lubrication when fluid dynamic lubrication is strongly reduced. The friction data reveals a decrease in absolute friction force with increasing temperature, which is associated with increased thermal motion and reduced viscosity of the near surface layers but, consistent with the normal force data, boundary layer lubrication was unaffected. The implications for ILs as lubricants are discussed in terms of the behaviour of this well characterised system.

  10. Sensing disks for slug-type calorimeters have higher temperature stability

    Science.gov (United States)

    1967-01-01

    Graphite sensing disk for slug-type radiation calorimeters exhibits better performance at high temperatures than copper and nickel disks. The graphite is heat-soaked to stabilize its emittance and the thermocouple is protected from the graphite so repeated temperature cycling does not change its sensitivity.

  11. Tungsten as a Chemically-Stable Electrode Material on Ga-Containing Piezoelectric Substrates Langasite and Catangasite for High-Temperature SAW Devices

    Directory of Open Access Journals (Sweden)

    Gayatri K. Rane

    2016-02-01

    Full Text Available Thin films of tungsten on piezoelectric substrates La3Ga5SiO14 (LGS and Ca3TaGa3Si2O14 (CTGS have been investigated as a potential new electrode material for interdigital transducers for surface acoustic wave-based sensor devices operating at high temperatures up to 800 °C under vacuum conditions. Although LGS is considered to be suitable for high-temperature applications, it undergoes chemical and structural transformation upon vacuum annealing due to diffusion of gallium and oxygen. This can alter the device properties depending on the electrode nature, the annealing temperature, and the duration of the application. Our studies present evidence for the chemical stability of W on these substrates against the diffusion of Ga/O from the substrate into the film, even upon annealing up to 800 °C under vacuum conditions using Auger electron spectroscopy and energy-dispersive X-ray spectroscopy, along with local studies using transmission electron microscopy. Additionally, the use of CTGS as a more stable substrate for such applications is indicated.

  12. Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn; Shen, Shanshan; Xu, Jun; Wang, Jing, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn [Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2016-06-15

    Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

  13. Single-crystal-like GdNdOx thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

    Directory of Open Access Journals (Sweden)

    Ziwei Wang

    2016-06-01

    Full Text Available Single-crystal-like rare earth oxide thin films on silicon (Si substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdOx (GNO film was deposited using a high-temperature sputtering process at 500°C. A Gd2O3 and Nd2O3 mixture was used as the sputtering target, in which the proportions of Gd2O3 and Nd2O3 were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

  14. Low-temperature growth of well-aligned zinc oxide nanorod arrays on silicon substrate and their photocatalytic application

    Directory of Open Access Journals (Sweden)

    Azam A

    2014-04-01

    Full Text Available Ameer Azam,1 Saeed Salem Babkair21Center of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia; 2Center of Nanotechnology, Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi ArabiaAbstract: Well-aligned and single-crystalline zinc oxide (ZnO nanorod arrays were grown on silicon (Si substrate using a wet chemical route for the photodegradation of organic dyes. Structural analysis using X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction confirmed the formation of ZnO nanorods grown preferentially oriented in the (001 direction and with a single phase nature with a wurtzite structure. Field emission scanning electron microscopy and transmission electron microscopy micrographs showed that the length and diameter of the well-aligned rods were about ~350–400 nm and ~80–90 nm, respectively. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E2 (high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. The photodegradation of methylene blue (MB using ZnO nanorod arrays was performed under ultraviolet light irradiation. The results of photodegradation showed that ZnO nanorod arrays were capable of degrading ~80% of MB within 60 minutes of irradiation, whereas ~92% of degradation was achieved in 120 minutes. Complete degradation of MB was observed after 270 minutes of irradiation time. Owing to enhanced photocatalytic degradation efficiency and low-temperature growth method, prepared ZnO nanorod arrays may open up the possibility for the successful utilization of ZnO nanorod arrays as a future photocatalyst for environmental remediation.Keywords: ZnO, nanorods, XRD, photodegradation

  15. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  16. Is higher body temperature beneficial in ischemic stroke patients with normal admission CT angiography of the cerebral arteries?

    Science.gov (United States)

    Kvistad, Christopher Elnan; Khanevski, Andrej; Nacu, Aliona; Thomassen, Lars; Waje-Andreassen, Ulrike; Naess, Halvor

    2014-01-01

    Low body temperature is considered beneficial in ischemic stroke due to neuroprotective mechanisms, yet some studies suggest that higher temperatures may improve clot lysis and outcomes in stroke patients treated with tissue plasminogen activator (tPA). The effect of increased body temperature in stroke patients treated with tPA and with normal computed tomography angiography (CTA) on admission is unknown. We hypothesized a beneficial effect of higher body temperature in the absence of visible clots on CTA, possibly due to enhanced lysis of small, peripheral clots. Patients with ischemic stroke admitted to our Stroke Unit between February 2006 and April 2013 were prospectively registered in a database (Bergen NORSTROKE Registry). Ischemic stroke patients treated with tPA with normal CTA of the cerebral arteries were included. Outcomes were assessed by the modified Rankin Scale (mRS) after 1 week. An excellent outcome was defined as mRS=0, and a favorable outcome as mRS=0-1. A total of 172 patients were included, of which 48 (27.9%) had an admission body temperature ≥37.0°C, and 124 (72.1%) had a body temperature temperature ≥37.0°C was independently associated with excellent outcomes (odds ratio [OR]: 2.8; 95% confidence interval [CI]: 1.24-6.46; P=0.014) and favorable outcomes (OR: 2.8; 95% CI: 1.13-4.98; P=0.015) when adjusted for confounders. We found an association between higher admission body temperature and improved outcome in tPA-treated stroke patients with normal admission CTA of the cerebral arteries. This may suggest a beneficial effect of higher body temperature on clot lysis in the absence of visible clots on CTA.

  17. A shorter snowfall season associated with higher air temperatures over northern Eurasia

    International Nuclear Information System (INIS)

    Ye Hengchun; Cohen, Judah

    2013-01-01

    The temperature sensitivity of the snowfall season (start, end, duration) over northern Eurasia (the former USSR) is analyzed from synoptic records of 547 stations from 1966 to 2000. The results find significant correlations between temperature and snowfall season at approximately 56% of stations (61% for the starting date and 56% for the ending date) with a mean snowfall season duration temperature sensitivity of −6.2 days °C −1 split over the start (2.8 days) and end periods (−3.4 days). Temperature sensitivity was observed to increase with stations’ mean seasonal air temperature, with the strongest relationships at locations of around 6 °C temperature. This implies that increasing air temperature in fall and spring will delay the onset and hasten the end of snowfall events, and reduces the snowfall season length by 6.2 days for each degree of increase. This study also clarifies that the increasing trend in snowfall season length during 1936/37–1994 over northern European Russia and central Siberia revealed in an earlier study is unlikely to be associated with warming in spring and fall seasons. (letter)

  18. The Effective Lifetime of ACSR Full Tension Splice Connector Operated at Higher Temperature

    International Nuclear Information System (INIS)

    Wang, Jy-An John; Lara-Curzio, Edgar; King Jr, Thomas J.; Graziano, Joe; Chan, John; Goodwin, Tip

    2009-01-01

    This paper is to address the issues related to integrity of ACSR full tension splice connectors operated at high temperatures. A protocol of integrating analytical and experimental approaches to evaluate the integrity of a full tension single-stage splice connector (SSC) assembly during service at high operating temperature was developed. Based on the developed protocol the effective lifetime evaluation was demonstrated with ACSR Drake conductor SSC systems. The investigation indicates that thermal cycling temperature and frequency, conductor cable tension loading, and the compressive residual stress field within a SSC system have significant impact on the SSC integrity and the associated effective lifetime

  19. Analog and Power Microelectronics to Higher Radiation Levels and Lower Temperatures

    Data.gov (United States)

    National Aeronautics and Space Administration — A study was done to examine low-temperature effects and radiation damage properties of bipolar integrated circuits. Anticipated benefits: useful in missions with...

  20. Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

    Science.gov (United States)

    Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi

    2018-05-01

    We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

  1. Effect of temperature during ion sputtering on the surface segregation rate of antimony in an iron-antimony alloy at higher temperatures

    International Nuclear Information System (INIS)

    Oku, M.; Hirokawa, K.; Kimura, H.; Suzuki, S.

    1986-01-01

    The surface segregation of antimony in an iron-0.23 at% antimony alloy was studied by XPS. The segregation rate in the temperature range between 800 and 900 K depends on the temperature during sputtering with argon ion of kinetic energy of 1 keV. The sputtering at room temperature or 473 K gives higher values of the segregation rate than those at 673 K. Both cases give the activation energy of 170 kJmol -1 for the surface segregation rate. The segregation of antimony is not observed after the sample is heated at 1000 K. (author)

  2. High-temperature pretreatment of biogas substrate by using district heating to increase the biogas production; Hoegtemperaturfoerbehandling av biogassubstrat med fjaerrvaerme foer oekad biogasproduktion

    Energy Technology Data Exchange (ETDEWEB)

    Del Pilar Castillo, Maria; Ascue, Johnny [JTI, Uppsala (Sweden); Olsson, Marcus; Henriksson, Gunilla; Nordman, Roger [SP, Boraas (Sweden)

    2011-12-15

    In this study, we have shown that pre-heating sludge from a waste water treatment plant can give a higher biogas production rate. However, pretreatment showed no effect on substrate from a biogas plant at the conditions tested in this study. The study has also shown that there is potential of using district heating in the biogas industry for thermal pretreatment of sludge.

  3. Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Armstrong, A.; Poblenz, C.; Green, D.S.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

    2006-01-01

    The electrical conductivity and deep level spectrum of GaN grown by molecular beam epitaxy and codoped with carbon and silicon were investigated for substrate temperatures T s of 650 and 720 deg. C as a function relative carbon and silicon doping levels. With sufficiently high carbon doping, semi-insulating behavior was observed for films grown at both temperatures, and growth at T s =720 deg. C enhanced the carbon compensation ratio. Similar carbon-related band gap states were observed via deep level optical spectroscopy for films grown at both substrate temperatures. Due to the semi-insulating nature of the films, a lighted capacitance-voltage technique was required to determine individual deep level concentrations. Carbon-related band gap states underwent substantial redistribution between deep level and shallow acceptor configurations with change in T s . In light of a T s dependence for the preferential site of carbon incorporation, a model of semi-insulating behavior in terms of carbon impurity state incorporation mediated by substrate temperature is proposed

  4. Effect of the substrate temperature on the physical properties of molybdenum tri-oxide thin films obtained through the spray pyrolysis technique

    International Nuclear Information System (INIS)

    Martínez, H.M.; Torres, J.; López Carreño, L.D.; Rodríguez-García, M.E.

    2013-01-01

    Polycrystalline molybdenum tri-oxide thin films were prepared using the spray pyrolysis technique; a 0.1 M solution of ammonium molybdate tetra-hydrated was used as a precursor. The samples were prepared on Corning glass substrates maintained at temperatures ranging between 423 and 673 K. The samples were characterized through micro Raman, X-ray diffraction, optical transmittance and DC electrical conductivity. The species MoO 3 (H 2 O) 2 was found in the sample prepared at a substrate temperature of 423 K. As the substrate temperature rises, the water disappears and the samples crystallize into α-MoO 3 . The optical gap diminishes as the substrate temperature rises. Two electrical transport mechanisms were found: hopping under 200 K and intrinsic conduction over 200 K. The MoO 3 films' sensitivity was analyzed for CO and H 2 O in the temperature range 160 to 360 K; the results indicate that CO and H 2 O have a reduction character. In all cases, it was found that the sensitivity to CO is lower than that to H 2 O. - Highlights: ► A low cost technique is used which produces good material. ► Thin films are prepared using ammonium molybdate tetra hydrated. ► The control of the physical properties of the samples could be done. ► A calculation method is proposed to determine the material optical properties. ► The MoO 3 thin films prepared by spray pyrolysis could be used as gas sensor.

  5. Progress report on the influence of higher interpass temperatures on the integrity of austenitic stainless steel welded joints

    Energy Technology Data Exchange (ETDEWEB)

    Yarmuch, M.; Choi, L. [Alberta Research Council, Edmonton, AB (Canada); Armstrong, K.; Radu, I. [PCL Industrial Constructors Inc., Nisku, AB (Canada)

    2008-07-01

    This report discussed the progress of the Welding Productivity Group (TWPG) interpass temperature assessment project (ITAP). The project was initiated to evaluate the influence of interpass temperatures on the metallurgical, corrosive, and mechanical properties of austenitic stainless steel, carbon steel, and low-alloy pressure weldments. To date, the project has conducted experiments to determine if interpass temperatures in austenitic stainless steel weldments are higher than temperatures recommended by API requirements. Elevated interpass temperatures for various base materials have been evaluated. Preliminary metallurgical, mechanical, and laboratory corrosion data from 3 experiments with 304/304L and 316/316L stainless steel weldment test specimens has shown that no significant changes occur as a result of elevated interpass temperatures. Results from side bend specimens have demonstrated that elevated interpass temperatures produce acceptable weldment ductility. No intergranular cracking was observed during oxalic acid etch tests conducted for the 316/316L samples. Huey tests performed on the 304/304L specimens indicated that elevated interpass temperatures did not adversely affect the intergranular corrosion resistance of weldments with less than 3 weld passes. Huey tests performed on the 316 specimens showed a marked increase in corrosion rates and normalized weight losses. It was concluded that rates of attack correlate with the maximum interpass temperature and not the average weld metal ferrite number. 22 refs., 11 tabs., 12 figs.

  6. Pretreatment of lignocellulosic material with fungi capable of higher lignin degradation and lower carbohydrate degradation improves substrate acid hydrolysis and the eventual conversion to ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Kuhar, S.; Nair, L.M.; Kuhad, R.C. [Delhi Univ., New Delhi (India). Dept. of Microbiology, Lignocellulose Biotechnology Laboratory

    2008-04-15

    Lignocellulosic biomass is the most abundant energy resource in the world and is a potential source of carbon substrate for the production of ethanol via fermentation. However, the presence of lignin restricts access to holocellulose. It is necessary to break or remove the lignin in plant residues prior to their hydrolysis. Pretreatment is needed to liberate cellulose and hemicellulose from the lignins. This paper discussed a biological delignification method that avoided the use of toxic and corrosive chemicals. The in situ microbial delignification process used white rot fungi as a basidiomycetes for biological pretreatment. The study examined the capability of 4 basidiomycetes fungi, notably: (1) Phanerochaete chrysosporium; (2) Pycnoporus cinnabarinus; (3) fungal isolate RCK-1; and (4) fungal isolate RCK-3. The fungi were used to delignify wheat straw and improve hydrolysis procedures. Attempts were also made to ferment the acid hydrolysates from fungal-pretreated lignocellulosic materials. Results of the experiment showed that higher yields of ethanol were obtained using selective lignin-degrading fungi as a pretreatment method. 39 refs., 3 tabs., 4 figs.

  7. Solid-substrate fermentation of wheat grains by mycelia of indigenous species of the genus Ganoderma (higher Basidiomycetes) to enhance the antioxidant activities.

    Science.gov (United States)

    Subramaniam, Sarasvathy; Sabaratnam, Vikineswary; Kuppusamy, Umah Rani; Tan, Yee Shin

    2014-01-01

    Species of the genus Ganoderma are a cosmopolitan wood decaying white rot fungi, which has been used by the Asians for therapeutic purposes for centuries. In the present study, solid-substrate fermentation (SSF) of wheat grains (Triticum aestivum L.) was carried out with indigenous Ganoderma australe (KUM60813) and G. neo-japonicum (KUM61076) selected based on ethnomycological knowledge. G. lucidum (VITA GL) (a commercial strain) was also included in the study. Antioxidant activities of the crude ethanol and aqueous extracts of the fermented and unfermented wheat grains were investigated by ferric reducing antioxidant power (FRAP), Trolox equivalent antioxidant capacity (TEAC), diphenyl-1-picryl-hydrazyl (DPPH) free radical scavenging ability, and lipid peroxidation assay. Among the six mycelia extracts tested, the ethanol extract from wheat fermented with KUM61076 mycelia showed the most potent antioxidant activities, whereas the ethanol extract of wheat grains fermented with KUM60813 mycelia has a good potential in protecting frying oils against oxidation. Total phenolic content (TPC) in the ethanol extracts were higher than that in the aqueous extract. The wheat grains fermented with G. australe (KUM60813) and G. neo-japonicum KUM61076 have greater antioxidant potential compared to the commercially available G. lucidum (VITA GL). The antioxidant activities of the mycelia extracts had a positive correlation with their phenolic contents. Thus phenolic compounds may play a vital role in the antioxidant activities of the selected Ganoderma spp.

  8. Heat-flow and temperature control in Tian–Calvet microcalorimeters: toward higher detection limits

    International Nuclear Information System (INIS)

    Vilchiz-Bravo, L E; Pacheco-Vega, A; Handy, B E

    2010-01-01

    Strategies based on the principle of heat flow and temperature control were implemented, and experimentally tested, to increase the sensitivity of a Tian–Calvet microcalorimeter for measuring heats of adsorption. Here, both heat-flow and temperature control schemes were explored to diminish heater-induced thermal variations within the heat sink element, hence obtaining less noise in the baseline signal. PID controllers were implemented within a closed-loop system to perform the control actions in a calorimetric setup. The experimental results demonstrate that the heat flow control strategy provided a better baseline stability when compared to the temperature control. The effects on the results stemming from the type of power supply used were also investigated

  9. Influence of deposits quantity and air temperature on 137Cs accumulation by the higher mushrooms

    Directory of Open Access Journals (Sweden)

    N. E. Zarubina

    2012-12-01

    Full Text Available Researches of the influence of weather conditions (amount of precipitation, air temperature on 137Cs content’s magnitude in fruit bodies of mushrooms: Boletus edulis Bull.: Fr., Suillus luteus (L.: Fr. S.F.Gray, Xerocomus badius (Fr. Kuhn. ex Gilb., Tricholoma flavovirens (Pers.: Fr. Lund., Cantharellus cibarius Fr. at the territory of Chernobyl alienation zone and «southern trace» are performed. Correlation factors, determination factors between specific activity 137Cs at mushrooms and quantity of deposits (mm and the maximum temperature of air (0С are calculated. At calculations the decrease of the content of 137Cs in mushrooms at the expense of disintegration of this isotope has been considered. As a result of researches the authentic dependence of specific activity 137Cs in fruit bodies of the studied kinds of mushrooms from quantity of deposits and from air temperature has not been established.

  10. Influence of deposits quantity and air temperature on 137Cs accumulation by the higher mushrooms

    International Nuclear Information System (INIS)

    Zarubina, N.E.

    2012-01-01

    Researches of the influence of weather conditions (amount of precipitation, air temperature) on 137 Cs content magnitude in fruit bodies of mushrooms: Boletus edulis Bull.: Fr., Suillus luteus (L.: Fr.) S.F.Gray, Xerocomus badius (Fr.) Kuhn. ex Gilb., Tricholoma flavovirens (Pers.: Fr.) Lund., Cantharellus cibarius Fr. at the territory of Chernobyl alienation zone and 'southern trace are performed. Correlation factors, determination factors between specific activity 137 Cs at mushrooms and quantity of deposits (mm) and the maximum temperature of air ( o C) are calculated. At calculations the decrease of the content of 137 Cs in mushrooms at the expense of disintegration of this isotope has been considered. As a result of researches the authentic dependence of specific activity 137 Cs in fruit bodies of the studied kinds of mushrooms from quantity of deposits and from air temperature has not been established.

  11. Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

    Energy Technology Data Exchange (ETDEWEB)

    Das, Sayantan; Alford, T. L. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287, USA and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

    2013-06-28

    Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

  12. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B., E-mail: galiev-galib@mail.ru [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Kitaeva, G. Kh. [Moscow State University, Faculty of Physics (Russian Federation); Klimov, E. A.; Klochkov, A. N. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Kolentsova, O. S. [National Research Nuclear University “MEPhI” (Russian Federation); Kornienko, V. V.; Kuznetsov, K. A. [Moscow State University, Faculty of Physics (Russian Federation); Maltsev, P. P.; Pushkarev, S. S. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)

    2017-03-15

    The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

  13. Increased Kawasaki Disease Incidence Associated With Higher Precipitation and Lower Temperatures, Japan, 1991-2004.

    Science.gov (United States)

    Abrams, Joseph Y; Blase, Jennifer L; Belay, Ermias D; Uehara, Ritei; Maddox, Ryan A; Schonberger, Lawrence B; Nakamura, Yosikazu

    2018-06-01

    Kawasaki disease (KD) is an acute febrile vasculitis, which primarily affects children. The etiology of KD is unknown; while certain characteristics of the disease suggest an infectious origin, genetic or environmental factors may also be important. Seasonal patterns of KD incidence are well documented, but it is unclear whether these patterns are caused by changes in climate or by other unknown seasonal effects. The relationship between KD incidence and deviations from expected temperature and precipitation were analyzed using KD incidence data from Japanese nationwide epidemiologic surveys (1991-2004) and climate data from 136 weather stations of the Japan Meteorological Agency. Seven separate Poisson-distributed generalized linear regression models were run to examine the effects of temperature and precipitation on KD incidence in the same month as KD onset and the previous 1, 2, 3, 4, 5 and 6 months, controlling for geography as well as seasonal and long-term trends in KD incidence. KD incidence was negatively associated with temperature in the previous 2, 3, 4 and 5 months and positively associated with precipitation in the previous 1 and 2 months. The model that best predicted variations in KD incidence used climate data from the previous 2 months. An increase in total monthly precipitation by 100 mm was associated with increased KD incidence (rate ratio [RR] 1.012, 95% confidence interval [CI]: 1.005-1.019), and an increase of monthly mean temperature by 1°C was associated with decreased KD incidence (RR 0.984, 95% CI: 0.978-0.990). KD incidence was significantly affected by temperature and precipitation in previous months independent of other unknown seasonal factors. Climate data from the previous 2 months best predicted the variations in KD incidence. Although fairly minor, the effect of temperature and precipitation independent of season may provide additional clues to the etiology of KD.

  14. Thermodynamic Studies of the Phase Relationships of Nonstoichiometric Cerium Oxides at Higher Temperatures

    DEFF Research Database (Denmark)

    Sørensen, Ole Toft

    1976-01-01

    Partial molar thermodynamic quantities for oxygen in nonstoichiometric cerium oxides were determined by thermogravimetric analysis in CO/CO2 mixtures in the temperature range 900–1400°C. Under these conditions compositions within the range 2.00 greater-or-equal, slanted O/M greater-or-equal, slan......Partial molar thermodynamic quantities for oxygen in nonstoichiometric cerium oxides were determined by thermogravimetric analysis in CO/CO2 mixtures in the temperature range 900–1400°C. Under these conditions compositions within the range 2.00 greater-or-equal, slanted O/M greater...

  15. The Lifetime Estimate for ACSR Single-Stage Splice Connector Operating at Higher Temperatures

    International Nuclear Information System (INIS)

    Wang, Jy-An John; Graziano, Joe; Chan, John

    2011-01-01

    This paper is the continuation of Part I effort to develop a protocol of integrating analytical and experimental approaches to evaluate the integrity of a full tension single-stage splice connector (SSC) assembly during service at high operating temperature.1The Part II efforts are mainly focused on the thermal mechanical testing, thermal-cycling simulation and its impact on the effective lifetime of the SSC system. The investigation indicates that thermal cycling temperature and frequency, conductor cable tension loading, and the compressive residual stress field within a SSC system have significant impact on the SSC integrity and the associated effective lifetime.

  16. Real-time observation of growth and orientation of Sm-Ba-Cu-O phases on a Sm-211 whisker substrate by high-temperature optical microscopy

    Czech Academy of Sciences Publication Activity Database

    Sun, J.L.; Huang, Y.B.; Cheng, L.; Yao, X.; Lai, Y.J.; Jirsa, Miloš

    2009-01-01

    Roč. 9, č. 2 (2009), 898-902 ISSN 1528-7483 R&D Projects: GA ČR GA202/08/0722 Institutional research plan: CEZ:AV0Z10100520 Keywords : high-temperature optical microscopy * growth and orientation of Sm-Ba-Cu-O phases * Sm-211 whisker substrate Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.162, year: 2009

  17. Higher Temperature Thermal Barrier Coatings with the Combined Use of Yttrium Aluminum Garnet and the Solution Precursor Plasma Spray Process

    Science.gov (United States)

    Gell, Maurice; Wang, Jiwen; Kumar, Rishi; Roth, Jeffery; Jiang, Chen; Jordan, Eric H.

    2018-02-01

    Gas-turbine engines are widely used in transportation, energy and defense industries. The increasing demand for more efficient gas turbines requires higher turbine operating temperatures. For more than 40 years, yttria-stabilized zirconia (YSZ) has been the dominant thermal barrier coating (TBC) due to its outstanding material properties. However, the practical use of YSZ-based TBCs is limited to approximately 1200 °C. Developing new, higher temperature TBCs has proven challenging to satisfy the multiple property requirements of a durable TBC. In this study, an advanced TBC has been developed by using the solution precursor plasma spray (SPPS) process that generates unique engineered microstructures with the higher temperature yttrium aluminum garnet (YAG) to produce a TBC that can meet and exceed the major performance standards of state-of-the-art air plasma sprayed YSZ, including: phase stability, sintering resistance, CMAS resistance, thermal cycle durability, thermal conductivity and erosion resistance. The temperature improvement for hot section gas turbine materials (superalloys & TBCs) has been at the rate of about 50 °C per decade over the last 50 years. In contrast, SPPS YAG TBCs offer the near-term potential of a > 200 °C improvement in temperature capability.

  18. Higher Temperature Thermal Barrier Coatings with the Combined Use of Yttrium Aluminum Garnet and the Solution Precursor Plasma Spray Process

    Science.gov (United States)

    Gell, Maurice; Wang, Jiwen; Kumar, Rishi; Roth, Jeffery; Jiang, Chen; Jordan, Eric H.

    2018-04-01

    Gas-turbine engines are widely used in transportation, energy and defense industries. The increasing demand for more efficient gas turbines requires higher turbine operating temperatures. For more than 40 years, yttria-stabilized zirconia (YSZ) has been the dominant thermal barrier coating (TBC) due to its outstanding material properties. However, the practical use of YSZ-based TBCs is limited to approximately 1200 °C. Developing new, higher temperature TBCs has proven challenging to satisfy the multiple property requirements of a durable TBC. In this study, an advanced TBC has been developed by using the solution precursor plasma spray (SPPS) process that generates unique engineered microstructures with the higher temperature yttrium aluminum garnet (YAG) to produce a TBC that can meet and exceed the major performance standards of state-of-the-art air plasma sprayed YSZ, including: phase stability, sintering resistance, CMAS resistance, thermal cycle durability, thermal conductivity and erosion resistance. The temperature improvement for hot section gas turbine materials (superalloys & TBCs) has been at the rate of about 50 °C per decade over the last 50 years. In contrast, SPPS YAG TBCs offer the near-term potential of a > 200 °C improvement in temperature capability.

  19. Ion beam modification of structural and optical properties of GeO2 thin films deposited at various substrate temperatures using pulsed laser deposition

    Science.gov (United States)

    Rathore, Mahendra Singh; Vinod, Arun; Angalakurthi, Rambabu; Pathak, A. P.; Singh, Fouran; Thatikonda, Santhosh Kumar; Nelamarri, Srinivasa Rao

    2017-11-01

    High energy heavy ion irradiation-induced modification of high quality crystalline GeO2 thin films grown at different substrate temperatures ranging from 100 to 500 °C using pulsed laser deposition has been investigated. The pristine films were irradiated with 100 MeV Ag7+ ions at fixed fluence of 1 × 1013 ions/cm2. These pristine and irradiated films have been characterized using X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared and photoluminescence spectroscopy. The XRD and Raman results of pristine films confirm the formation of hexagonal structure of GeO2 films, whereas the irradiation eliminates all the peaks except major GeO2 peak of (101) plane. It is evident from the XRD results that crystallite size changes with substrate temperature and SHI irradiation. The surface morphology of films was studied by AFM. The functional group of pristine and irradiated films was investigated by IR transmission spectra. Pristine films exhibited strong photoluminescence around 342 and 470 nm due to oxygen defects and a red shift in the PL bands is observed after irradiation. Possible mechanism of tuning structural and optical properties of pristine as well as irradiated GeO2 films with substrate temperature and ion beam irradiation has been reported in detail.

  20. Dopamine mediated iron release from ferritin is enhanced at higher temperatures: Possible implications for fever-induced Parkinson's disease

    International Nuclear Information System (INIS)

    Babincova, Melania; Babinec, Peter

    2005-01-01

    A new molecular mechanism is proposed to explain the pathogenesis of fever-induced Parkinson's disease. This proposal is based on dopamine and 6-hydroxydopamine-mediated free iron release from ferritin magnetic nanoparticles, which is enhanced at higher temperatures, and which may lead to substantial peroxidation and injury of lipid biomembranes of the substantia nigra in the brain

  1. Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

    Science.gov (United States)

    Qui, Y.; Uhl, D.; Keo, S.

    2003-01-01

    Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

  2. Higher Temperature at Lower Elevation Sites Fails to Promote Acclimation or Adaptation to Heat Stress During Pollen Germination

    Directory of Open Access Journals (Sweden)

    Lluvia Flores-Rentería

    2018-04-01

    Full Text Available High temperatures associated with climate change are expected to be detrimental for aspects of plant reproduction, such as pollen viability. We hypothesized that (1 higher peak temperatures predicted with climate change would have a minimal effect on pollen viability, while high temperatures during pollen germination would negatively affect pollen viability, (2 high temperatures during pollen dispersal would facilitate acclimation to high temperatures during pollen germination, and (3 pollen from populations at sites with warmer average temperatures would be better adapted to high temperature peaks. We tested these hypotheses in Pinus edulis, a species with demonstrated sensitivity to climate change, using populations along an elevational gradient. We tested for acclimation to high temperatures by measuring pollen viability during dispersal and germination stages in pollen subjected to 30, 35, and 40°C in a factorial design. We also characterized pollen phenology and measured pollen heat tolerance using trees from nine sites along a 200 m elevational gradient that varied 4°C in temperature. We demonstrated that this gradient is biologically meaningful by evaluating variation in vegetation composition and P. edulis performance. Male reproduction was negatively affected by high temperatures, with stronger effects during pollen germination than pollen dispersal. Populations along the elevational gradient varied in pollen phenology, vegetation composition, plant water stress, nutrient availability, and plant growth. In contrast to our hypothesis, pollen viability was highest in pinyons from mid-elevation sites rather than from lower elevation sites. We found no evidence of acclimation or adaptation of pollen to high temperatures. Maximal plant performance as measured by growth did not occur at the same elevation as maximal pollen viability. These results indicate that periods of high temperature negatively affected sexual reproduction, such that

  3. Effect of Aluminum Substrate Surface Modification on Wettability and Freezing Delay of Water Droplet at Subzero Temperatures

    DEFF Research Database (Denmark)

    Rahimi, Maral; Afshari, Alireza; Thormann, Esben

    2016-01-01

    followed the trend in this theory, the differences in the extents of freezing delays were in apparent disagreement with the predictions. Concretely, a slightly hydrophilic substrate modified by (3-aminopropyl) triethoxysilane (APTES) showed longer freezing delays than both more hydrophilic and more...

  4. Acclimation to higher VPD and temperature minimized negative effects on assimilation and grain yield of wheat

    DEFF Research Database (Denmark)

    Rashid, Muhammad Adil; Andersen, Mathias Neumann; Wollenweber, Bernd

    2018-01-01

    Adapting to climate change and minimizing its negative impact on crop production requires detailed understanding of the direct and indirect effects of different climate variables (i.e. temperature, VPD). We investigated the direct (via heat stress) and indirect effects (through increased VPD....... Treatments included hot humid (HH: 36° C; 1.96 kPa VPD), hot dry (HD: 36° C; 3.92 kPa VPD) and normal (NC: 24° C; 1.49 kPa VPD). Difference between HH and HD was considered as the indirect effect of temperature through increased VPD. HD increased transpiration by 2–22% and decreased photosynthetic water......-use efficiency (WUEp) by 24–64% over HH during stress but whole-plant WUE at final harvest was not affected. HD reduced grainfilling duration (3 days), resulted in relatively lower green leaf area (GLA) after the stress and showed a tendency of lower net assimilation rate during the stress compared to HH...

  5. Pretreatment of lignocellulosic material with fungi capable of higher lignin degradation and lower carbohydrate degradation improves substrate acid hydrolysis and the eventual conversion to ethanol.

    Science.gov (United States)

    Kuhar, Sarika; Nair, Lavanya M; Kuhad, Ramesh Chander

    2008-04-01

    Phanerochaete chrysosporium, Pycnoporus cinnabarinus,and fungal isolates RCK-1 and RCK-3 were tested for their lignin degradation abilities when grown on wheat straw (WS) and Prosopis juliflora (PJ) under solid-state cultivation conditions. Fungal isolate RCK-1 degraded more lignin in WS (12.26% and 22.64%) and PJ (19.30% and 21.97%) and less holocellulose in WS (6.27% and 9.39%) and PJ (3.01% and 4.58%) after 10 and 20 days, respectively, than other fungi tested. Phanerochaete chrysosporium caused higher substrate mass loss and degraded more of holocellulosic content (WS: 55.67%; PJ: 48.89%) than lignin (WS: 18.89%; PJ: 20.20%) after 20 days. The fungal pretreatment of WS and PJ with a high-lignin-degrading and low-holocellulose-degrading fungus (fungal isolate RCK-1) for 10 days resulted in (i) reduction in acid load for hydrolysis of structural polysaccharides (from 3.5% to 2.5% in WS and from 4.5% to 2.5% in PJ), (ii) an increase in the release of fermentable sugars (from 30.27 to 40.82 g L(-1) in WS and from 18.18 to 26.00 g L(-1) in PJ), and (iii) a reduction in fermentation inhibitors (total phenolics) in acid hydrolysate of WS (from 1.31 to 0.63 g L(-1)) and PJ (from 2.05 to 0.80 g L(-1)). Ethanol yield and volumetric productivity from RCK-1-treated WS (0.48 g g(-1) and 0.54 g L(-1) h(-1), respectively) and PJ (0.46 g g(-1) and 0.33 g L(-1) h(-1), respectively) were higher than untreated WS (0.36 g g(-1) and 0.30 g L(-1) h(-1), respectively) and untreated PJ (0.42 g g(-1) and 0.21 g L(-1) h(-1), respectively).

  6. The growth of hydroxyapatite on alkaline treated Ti-6Al-4V soaking in higher temperature with concentrated Ca2+/HPO42- simulated body fluid

    International Nuclear Information System (INIS)

    Lin, F.-H.; Hsu, Y.-S.; Lin, S.-H.; Chen, T.-M.

    2004-01-01

    In this study, calcium and phosphorous ions in the simulated body fluid (SBF) was be increased to increase the rate of precipitation of hydroxyapatite (HA). The soaking temperature in concentrated calcium and phosphorous ion-SBF (CP-SBF) was increased to reduce the nucleation energy of the HA, which lead to an early precipitation to shorten the treatment process. When the metallic substrates treated with 10 M NaOH aqueous solution and subsequently heated at 600 deg. C, a thin sodium titanium oxide layer was formed on the surfaces as the linking layer for HA and Ti-6Al-4V alloys. After Ti-6Al-4V alloys treated with alkali solution, it would soak into a simulated body fluid with higher concentration of calcium and phosphorous ions (CP-SBF) to increase the possibility of nucleation of HA. When Ti-6Al-4V alloys treated with alkali solution, subsequently heated at 600 deg. C, and then soaked into CP-SBF at a temperature of 80 deg. C, it could form a dense and thick (50 μm) bone-like hydroxyapatite layer on the surface. The HA layer was appeared on the surface of the Ti-alloy at the first week soaking, which was greatly shorten the coating process. In the research, the characteristics of the coating layer will be analyzed by the results of X-ray diffractometer (XRD), scanning electron microscope (SEM), and Fourier transformation infrared (FT-IR)

  7. Effect of the substrate surface topology and temperature on the structural properties of ZnO layers obtained by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria)

    2010-04-01

    In this work thin ZnO layers were grown by metal-organic PECVD (RF 13.56 MHz) on Si wafers. Zn acetylacetonate was used as a precursor and oxygen as oxidant. A system for dosed injection of the precursor and oxidant into the plasma reactor was developed. The influence of the substrate surface topology and temperature on the structural properties of the deposited layers was studied. ZnO and graphite powder dispersions were used to modify the silicon wafers before starting the deposition process of the layers. Some of the ZnO layers were deposited on the back, unpolished, side of Si wafers. Depositions at 400 {sup 0}C were performed to examine the effect of the substrate temperatures on the layer growth. The film structure was examined by XRD and SEM. The results show that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along the c-axis direction perpendicular to the substrate surfaces. ZnO layers deposited on thin ZnO seed films and clean Si surface exhibit well-developed grain structures and more c-axis preferred phase with better crystal quality than that of the layers deposited on graphite seed layer or rough, unpolished Si wafer.

  8. Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

    Science.gov (United States)

    Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

    2018-07-01

    We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

  9. Communal nesting under climate change: fitness consequences of higher incubation temperatures for a nocturnal lizard.

    Science.gov (United States)

    Dayananda, Buddhi; Gray, Sarah; Pike, David; Webb, Jonathan K

    2016-07-01

    Communal nesting lizards may be vulnerable to climate warming, particularly if air temperatures regulate nest temperatures. In southeastern Australia, velvet geckos Oedura lesueurii lay eggs communally inside rock crevices. We investigated whether increases in air temperatures could elevate nest temperatures, and if so, how this could influence hatching phenotypes, survival, and population dynamics. In natural nests, maximum daily air temperature influenced mean and maximum daily nest temperatures, implying that nest temperatures will increase under climate warming. To determine whether hotter nests influence hatchling phenotypes, we incubated eggs under two fluctuating temperature regimes to mimic current 'cold' nests (mean = 23.2 °C, range 10-33 °C) and future 'hot' nests (27.0 °C, 14-37 °C). 'Hot' incubation temperatures produced smaller hatchlings than did cold temperature incubation. We released individually marked hatchlings into the wild in 2014 and 2015, and monitored their survival over 10 months. In 2014 and 2015, hot-incubated hatchlings had higher annual mortality (99%, 97%) than cold-incubated (11%, 58%) or wild-born hatchlings (78%, 22%). To determine future trajectories of velvet gecko populations under climate warming, we ran population viability analyses in Vortex and varied annual rates of hatchling mortality within the range 78- 96%. Hatchling mortality strongly influenced the probability of extinction and the mean time to extinction. When hatchling mortality was >86%, populations had a higher probability of extinction (PE: range 0.52- 1.0) with mean times to extinction of 18-44 years. Whether future changes in hatchling survival translate into reduced population viability will depend on the ability of females to modify their nest-site choices. Over the period 1992-2015, females used the same communal nests annually, suggesting that there may be little plasticity in maternal nest-site selection. The impacts of climate change may

  10. Drought and Cooler Temperatures Are Associated with Higher Nest Survival in Mountain Plovers

    Directory of Open Access Journals (Sweden)

    Victoria J. Dreitz

    2012-06-01

    Full Text Available Native grasslands have been altered to a greater extent than any other biome in North America. The habitats and resources needed to support breeding performance of grassland birds endemic to prairie ecosystems are currently threatened by land management practices and impending climate change. Climate models for the Great Plains prairie region predict a future of hotter and drier summers with strong multiyear droughts and more frequent and severe precipitation events. We examined how fluctuations in weather conditions in eastern Colorado influenced nest survival of an avian species that has experienced recent population declines, the Mountain Plover (Charadrius montanus. Nest survival averaged 27.2% over a 7-yr period (n = 936 nests and declined as the breeding season progressed. Nest survival was favored by dry conditions and cooler temperatures. Projected changes in regional precipitation patterns will likely influence nest survival, with positive influences of predicted declines in summer rainfall yet negative effects of more intense rain events. The interplay of climate change and land use practices within prairie ecosystems may result in Mountain Plovers shifting their distribution, changing local abundance, and adjusting fecundity to adapt to their changing environment.

  11. Study of higher order cumulant expansion of U(1) lattice gauge model at finite temperature

    International Nuclear Information System (INIS)

    Zheng Xite; Lei Chunhong; Li Yuliang; Chen Hong

    1993-01-01

    The order parameter, Polyakov line , of the U(1) gauge model on N σ 3 x N τ (N τ = 1) lattice by using the cumulant expansion is calculated to the 5-th order. The emphasis is put on the behaviour of the cumulant expansion in the intermediate coupling region. The necessity of higher order expansion is clarified from the connection between the cumulant expansion and the correlation length. The variational parameter in the n-th order calculation is determined by the requirement that corrections of the n-th order expansion to the zeroth order expansion finish. The agreement with the Monte Carlo simulation is obtained not only in the weak and strong coupling regions, but also in the intermediate coupling region except in the very vicinity of the phase transition point

  12. Comprehensive analysis of an Antarctic bacterial community with the adaptability of growth at higher temperatures than those in Antarctica.

    Science.gov (United States)

    Hosoi-Tanabe, Shoko; Zhang, Hongyan; Zhu, Daochen; Nagata, Shinichi; Ban, Syuhei; Imura, Satoshi

    2010-06-01

    To investigate the adaptability to higher temperatures of Antarctic microorganisms persisting in low temperature conditions for a long time, Antarctic lake samples were incubated in several selection media at 25 degrees C and 30 degrees C. The microorganisms did not grow at 30 degrees C; however, some of them grew at 25 degrees C, indicating that the bacteria in Antarctic have the ability to grow at a wide range of temperatures. Total DNA was extracted from these microorganisms and amplified using the bacteria-universal primers. The amplified fragments were cloned, and randomly selected 48 clones were sequenced. The sequenced clones showed high similarity to the alpha-subdivision of the Proteobacteria with specific affinity to the genus Agrobacterium, Caulobacter and Brevundimonas, the ss-subdivision of Proteobacteria with specific affinity to the genus Cupriavidus, and Bacillus of the phylum Firmicutes. These results showed the presence of universal genera, suggesting that the bacteria in the Antarctic lake were not specific to this environment.

  13. Use resources of human exometabolites of different oxidation levels for higher plants cultivation on the soil-like substrate as applied to closed ecosystems

    Science.gov (United States)

    Tikhomirov, Alexander A.; Kudenko, Yurii; Ushakova, Sofya; Tirranen, Lyalya; Gribovskaya, Illiada; Gros, Jean-Bernard; Lasseur, Christophe

    The technology of ‘wet incineration' of human exometabolites and inedible plants biomass by means of H2 O2 in alternating electromagnetic field to increase a closure of mass exchange processes in bioregenerative life support systems (BLSS) was developed at the Institute of Biophysics of the Siberian Branch of Russian Academy of Sciences (Krasnoyarsk, Russia). Human exometabolites mineralized can be used in a nutrient solution for plants cultivation in the BLSS phototrophic link. The objective of the given work appears to be the study of use resources of human exometabolites of different oxidation levels processed by the abovementioned method for higher plants cultivation on the soil-like substrate (SLS). The mineralized human wastes were tested for the purpose of their sterility. Then the effect of human exometabolites of different oxidation levels both on wheat productivity and on the SLS microflora composition was examined. The SLS extract with a definite amount of human mineralized wastes was used as an irrigation solution. The conducted experiments demonstrated that the H2 O2 decreasing to 1 ml on 1 g of feces and to 0.25 ml on 1 ml of urine had not affected the sterility of mineralized human wastes. Wheat cultivation on the SLS with the addition in an irrigation solution of mineralized human wastes in the amount simulating 1/6 of a daily human diet showed the absence of basic dependence of plants productivity on oxidation level of human exometabolites. Yet the analysis of the microflora composition of the irrigation solutions demonstrated its dependence on the oxidation level of the exometabolites introduced. The amount of yeast-like fungi increased in 20 times in the solutions containing less oxidized exometabolites in comparison with the variant in which the human wastes were subjected to a full-scale oxidation. Besides, the solutions with less oxidized exometabolites displayed a bigger content of plant pathogenic bacteria and denitrifies. Consequently the

  14. A comparative study of glycerol and sorbitol as co-substrates in methanol-induced cultures of Pichia pastoris: temperature effect and scale-up simulation.

    Science.gov (United States)

    Berrios, Julio; Flores, María-Olga; Díaz-Barrera, Alvaro; Altamirano, Claudia; Martínez, Irene; Cabrera, Zaida

    2017-03-01

    The production of recombinant proteins by Pichia pastoris under AOX1 promoter is usually performed using methanol together with either glycerol or sorbitol as co-substrate. Although both co-substrates have been widely used, comparative studies are scarce. In addition, these comparisons have been performed at different specific growth rate (µ) that it is well known that has an important effect on productivity. Thus, the effect of using these co-substrates on the production of Rhyzopus oryzae lipase (ROL) by P. pastoris was compared in continuous cultures growing at the same µ at either 22 or 30 °C. Results show that using glycerol as co-substrate led to higher volumetric productivities, and lower specific and volumetric methanol consumption rates. Scale-up simulation with 10-10,000 L bioreactor sizes indicated that glycerol produced the highest volumetric productivity of ROL with lower aeration requirements. Therefore, glycerol rises as a better option than sorbitol in ROL production.

  15. High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate

    KAUST Repository

    Qian, Ling-Xuan

    2017-09-20

    Recently, monoclinic Ga2O3 (beta-Ga2O3) photodetectors (PDs) have been extensively studied for various commercial and military applications due to the merits of intrinsic solar rejection, high gain, and great compactness. In this work, c-plane sapphire substrates were annealed under different temperatures in a vacuum furnace prior to the molecular beam epitaxy (MBE) of beta-Ga2O3 thin film, which yielded a smoother surface and even a terraceand- step-like morphology on the substrate, resulting in improved crystallinity of the epitaxial film. Accordingly, both the dark and photo currents of beta-Ga2O3 metal-semiconductor-metal (MSM) PDs were increased by the enhanced carrier mobility (mu) of the more crystalline film. However, the substrate-annealing temperature must be sufficiently high to offset the rise of the dark current and thus achieve a remarkable improvement in the photodetection properties. As a result, the PD fabricated on the 1050 degrees C-annealed substrate exhibited extremely high sensitivity, for example, high responsivity (R) of 54.9 A/ W and large specific detectivity (D*) of 3.71 x 10(14) Jones. Both parameters were increased by one order of magnitude because of the combined effects of the dramatic increase in mu and the effective reduction in defect-related recombination centers. Nevertheless, the latter also prolonged the recovery time of the PD. These findings suggest another way to develop beta-Ga2O3 PD with extremely high sensitivity. (C) 2017 Optical Society of America

  16. A dye-decolorizing peroxidase from Bacillus subtilis exhibiting substrate-dependent optimum temperature for dyes and β-ether lignin dimer

    Science.gov (United States)

    Min, Kyoungseon; Gong, Gyeongtaek; Woo, Han Min; Kim, Yunje; Um, Youngsoon

    2015-01-01

    In the biorefinery using lignocellulosic biomass as feedstock, pretreatment to breakdown or loosen lignin is important step and various approaches have been conducted. For biological pretreatment, we screened Bacillus subtilis KCTC2023 as a potential lignin-degrading bacterium based on veratryl alcohol (VA) oxidation test and the putative heme-containing dye-decolorizing peroxidase was found in the genome of B. subtilis KCTC2023. The peroxidase from B. subtilis KCTC2023 (BsDyP) was capable of oxidizing various substrates and atypically exhibits substrate-dependent optimum temperature: 30°C for dyes (Reactive Blue19 and Reactive Black5) and 50°C for high redox potential substrates (2,2′-azino-bis(3-ethylbenzothiazoline-6-sulphonic acid [ABTS], VA, and veratryl glycerol-β-guaiacyl ether [VGE]) over +1.0 V vs. normal hydrogen electrode. At 50°C, optimum temperature for high redox potential substrates, BsDyP not only showed the highest VA oxidation activity (0.13 Umg−1) among the previously reported bacterial peroxidases but also successfully achieved VGE decomposition by cleaving Cα-Cβ bond in the absence of any oxidative mediator with a specific activity of 0.086 Umg−1 and a conversion rate of 53.5%. Based on our results, BsDyP was identified as the first bacterial peroxidase capable of oxidizing high redox potential lignin-related model compounds, especially VGE, revealing a previously unknown versatility of lignin degrading biocatalyst in nature. PMID:25650125

  17. Epitaxial growth of new half-metallic ferromagnet 'zinc-blende CrAs' and the substrate temperature dependence

    International Nuclear Information System (INIS)

    Mizuguchi, Masaki; Akinaga, Hiro; Manago, Takashi; Ono, Kanta; Oshima, Masaharu; Shirai, Masafumi

    2002-01-01

    Epitaxial zinc-blende CrAs thin films were grown at two different temperatures. CrAs (2 nm) grown at 200 deg. C formed plateau-shapes, whereas CrAs (2 nm) grown at 300 deg. C formed dispersed dots. The thin film grown at 200 deg. C showed ferromagnetic behavior at room temperature, and the Curie temperature was estimated to be over 400 K

  18. Effect of temperature and substrate on germination of Peltophorum dubium (Sprengel Taubert seeds - doi: 10.4025/actascibiolsci.v33i1.7057 Effect of temperature and substrate on germination of Peltophorum dubium (Sprengel Taubert seeds - doi: 10.4025/actascibiolsci.v33i1.7057

    Directory of Open Access Journals (Sweden)

    Mácio Faria de Moura

    2011-02-01

    Full Text Available Peltophorum dubium (Spreng. Taub. is a species belonging to the family Fabaceae, and is known popularly as golden shower tree. Its wood has multiple uses in reforestation programs and as an ornamental tree, and is also considered an endangered species, requiring studies that assist in its preservation. The present work was conducted with the objective of determine the ideal substrate type and temperature to perform germination and vigor tests with P. dubium seeds. The experiment was carried out at the Seed Analysis Laboratory (Centro de Ciências Agrárias, Universidade Federal Paraíba, Areia, Paraíba, Brazil, in a completely randomized design. The treatments were distributed in a 4 x 6 factorial scheme; temperatures (constant temperatures of 25, 30 and 35°C; and alternate temperatures of 20-30°C and substrate (paper towel, over blotting paper, in sand, in vermiculite, Bioplant® and Plantmax® on four replications of 25 seeds. The following parameters were analyzed: germination percentage, germination speed index, first germination count, length and dry mass of seedlings. The constant temperature of 30°C and 20-30°C alternate, and the substrates into sand and paper towel can be recommended for germination and vigor tests of P. dubium seeds. The temperature of 25°C should not be used in germination and vigor tests of P. dubium seeds in any of the tested substrates.Peltophorum dubium (Spreng. Taub. is a species belonging to the family Fabaceae, and is known popularly as golden shower tree. Its wood has multiple uses in reforestation programs and as an ornamental tree, and is also considered an endangered species, requiring studies that assist in its preservation. The present work was conducted with the objective of determine the ideal substrate type and temperature to perform germination and vigor tests with P. dubium seeds. The experiment was carried out at the Seed Analysis Laboratory (Centro de Ciências Agrárias, Universidade Federal

  19. Pengaruh Temperatur, Massa Zink, Substrat Dan Waktu Tahan Terhadap Struktur Dan Morfologi Zno Hasil Sintesis Dengan Metode Chemical Vapour Transport (CVT

    Directory of Open Access Journals (Sweden)

    Arisela Distyawan

    2013-09-01

    Full Text Available Normal 0 false false false MicrosoftInternetExplorer4 Material Zink Oksida (ZnO telah berhasil disintesis menggunakan metode Chemical Vapour Transport dengan bahan dasar prekursor berupa serbuk Zn yang dipanaskan hingga mencapai temperatur uap dalam furnace horisontal. Adapun variasi yang diberikan dalam penelitian adalah berupa temperatur pemanasan (850, 900, dan 950oC, massa prekursor Zn (0,15, 0,25, dan 0,35g, lama waktu sputtering substrat (90 dan 180 detik, dan waktu tahan khusus untuk mengetahui initial growth ZnO (10, 20, 30, 40, 50, dan 60 menit. Pembentukan Zink Oksida (ZnO dikonfirmasi melalui data X-RD, dimana telah terbentuk material ZnO dengan struktur hexagonal wurtzite. Berdarsarkan data XRD juga diketahui ukuran kristal pada sampel sputtering 90 detik mengalami penurunan bersamaan penambahan massa Zn. Dari hasil pengamatan SEM didapatkan bahwa morfologi permukaan lapisan tipis ZnO terdiri dari berbagai macam bentuk berupa nanoparticle, nanowires, nanorods, dan nanotetrapod. Lapisan Zno paling tebal sebesar ±350 nm pada sampel 950oC-0,15g sputter 90 detik. Semakin tinggi temperatur operasi berdampak peningkatan ukuran partikel. Pengujian FTIR turut menguatkan terbentuknya lapisan tipis di permukaan substrat Alumina. Hal ini didasarkan terjadinya penyerapan vibrasi yang membentuk lekukan pada kisaran area 509 cm-1 dari masing-masing sampel.

  20. Luz, substrato e temperatura na germinação de sementes de cedro-vermelho Light, substrate and temperature in the germination of seeds of Cedrela odorata

    Directory of Open Access Journals (Sweden)

    Marco Antônio Amaral Passos

    2008-02-01

    Full Text Available O objetivo deste estudo foi avaliar o tipo de substrato, a temperatura e os regimes de luz mais adequados à germinação de sementes de Cedrela odorata L. O delineamento experimental adotado, em todos os ensaios, foi o inteiramente casualizado com quatro repetições de 25 sementes cada. As temperaturas constantes de 25 e 30ºC, a temperatura alternada de 20-30ºC e os substratos pó de coco e areia são as melhores condições para a germinação das sementes de C. odorata. A germinação das sementes da espécie estudada não se mostrou sensível aos diferentes regimes de luz aplicados.This work aimed to evaluate the kind of substrate, and temperature and light conditions more suitable for seed germination of Cedrela odorata L. The experimental design adopted in all experiments was the completely randomized design with four repetitions of twenty-five seeds each. The constant temperatures (25 and 30ºC, the alternated temperature (20-30ºC, and the coconut fiber and sand substrates are the better conditions for seed germination of C. odorata. Seed germination of the studied specie showed no sensitiveness to the different levels of light applied.

  1. Low Temperature (180°C Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Teng-Hsiang Chang

    2014-01-01

    Full Text Available This paper describes a new method to grow thin germanium (Ge epilayers (40 nm on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD process. The full width at half maximum (FWHM of the Ge (004 in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.

  2. Effects of incident cluster size, substrate temperature, and incident energy on bombardment of Ni clusters onto Cu (0 0 1) surface studied using molecular dynamics simulation

    International Nuclear Information System (INIS)

    Lin, Shiang-Jiun; Wu, Cheng-Da; Fang, Te-Hua; Chen, Guan-Hung

    2012-01-01

    The bombardment process of a Ni cluster onto a Cu (0 0 1) surface is studied using molecular dynamics (MD) simulations based on the tight-binding second-moment approximation (TB-SMA) many-body potential. The effects of incident cluster size, substrate temperature, and incident energy are evaluated in terms of molecular trajectories, kinetic energy, stress, self-diffusion coefficient, and sputtering yield. The simulation results clearly show that the penetration depth and Cu surface damage increase with increasing incident cluster size for a given incident energy per atom. The self-diffusion coefficient and the penetration depth of a cluster significantly increase with increasing substrate temperature. An incident cluster can be scattered into molecules or atoms that become embedded in the surface after incidence. When the incident energy is increased, the number of volcano-like defects and the penetration depth increase. A high sputtering yield can be obtained by increasing the incident energy at high temperature. The sputtering yield significantly increases with cluster size when the incident energy is above 5 eV/atom.

  3. All-inkjet-printed flexible electronics fabrication on a polymer substrate by low-temperature high-resolution selective laser sintering of metal nanoparticles

    International Nuclear Information System (INIS)

    Ko, Seung H; Pan Heng; Grigoropoulos, Costas P; Luscombe, Christine K; Frechet, Jean M J; Poulikakos, Dimos

    2007-01-01

    All-printed electronics is the key technology to ultra-low-cost, large-area electronics. As a critical step in this direction, we demonstrate that laser sintering of inkjet-printed metal nanoparticles enables low-temperature metal deposition as well as high-resolution patterning to overcome the resolution limitation of the current inkjet direct writing processes. To demonstrate this process combined with the implementation of air-stable carboxylate-functionalized polythiophenes, high-resolution organic transistors were fabricated in ambient pressure and room temperature without utilizing any photolithographic steps or requiring a vacuum deposition process. Local thermal control of the laser sintering process could minimize the heat-affected zone and the thermal damage to the substrate and further enhance the resolution of the process. This local nanoparticle deposition and energy coupling enable an environmentally friendly and cost-effective process as well as a low-temperature manufacturing sequence to realize large-area, flexible electronics on polymer substrates

  4. Absence of low temperature phase transitions and enhancement of ferroelectric transition temperature in highly strained BaTiO{sub 3} epitaxial films grown on MgO Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Satish; Kumar, Dhirendra; Sathe, V. G., E-mail: vasant@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001 (India); Kumar, Ravi; Sharma, T. K. [Semiconductor Physics and Devices Lab, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2015-04-07

    Recently, a large enhancement in the ferroelectric transition temperature of several oxides is reported by growing the respective thin films on appropriate substrates. This phenomenon is correlated with high residual strain in thin films often leading to large increase in the tetragonality of their crystal structure. However, such an enhancement of transition temperature is usually limited to very thin films of ∼10 nm thickness. Here, we report growth of fully strained epitaxial thin films of BaTiO{sub 3} of 400 nm thickness, which are coherently grown on MgO substrates by pulsed laser deposition technique. Conventional high resolution x-ray diffraction and also the reciprocal space map measurements confirm that the film is fully strained with in-plane tensile strain of 5.5% that dramatically increases the tetragonality to 1.05. Raman measurements reveal that the tetragonal to cubic structural phase transition is observed at 583 K, which results in an enhancement of ∼200 K. Furthermore, temperature dependent Raman studies on these films corroborate absence of all the low temperature phase transitions. Numerical calculations based on thermodynamical model predict a value of the transition temperature that is greater than 1500 °C. Our experimental results are therefore in clear deviation from the existing strain dependent phase diagrams.

  5. Germinação de sementes de urucu em diferentes temperaturas e substratos Germination of annatto seeds under different temperatures and substrates

    Directory of Open Access Journals (Sweden)

    Renata Vianna Lima

    2007-08-01

    Full Text Available Objetivou-se, neste trabalho, analisar o comportamento germinativo das sementes de urucu cultivar Casca Verde, com e sem escarificação, sob regime de diferentes temperaturas e substratos. O trabalho foi realizado no Laboratório de Tecnologia e Análise de Sementes do Centro de Ciências Agrárias da Universidade Federal do Espírito Santo (CCA-UFES. O delineamento experimental utilizado foi o inteiramente casualizado, num esquema fatorial 2x6x4 (dois tratamentos físicos nas sementes, seis substratos e quatro temperaturas, totalizando 48 tratamentos, com quatro repetições de 50 sementes. Os tratamentos físicos foram: as sementes intactas e as sementes escarificadas; os substratos foram: a areia, a vermiculita, a fibra de coco, o pó de serra, o Plantmax e o rolo de papel Germitest ; e, as temperaturas testadas foram constantes de 20, 25 e 30ºC e alternada de 20-30ºC. Os dados foram submetidos à análise de variância e as médias comparadas pelo teste de Tukey. Os resultados obtidos evidenciaram maior porcentagem de germinação das sementes de urucu, semeadas nos substratos areia, vermiculita e rolo de papel; as temperaturas de 25, 30 e 20-30ºC foram mais adequadas para testes de germinação dessas sementes.This work was carried out with the objective to verify the effect of temperature and substrate on germinative capacity of annatto seeds. This study was developed in the Laboratories of Seed Analysis of Agrarian Science Center that belongs to the Universidade Federal do Espirito Santo (CCA-UFES, located in Alegre ES, Brazil. The experimental design was 2x6x4 factorial involving: (i two treatments in the seeds, (ii six substrates, and (iii four temperatures. Four replications were realized using 50 seeds at each experimental unit. Treatments refer to intact and scarified seeds. Substrates utilized were sand, vermiculite, coconut fiber, wood fiber, Plantmax and paper roll. Temperatures employed were 20, 25, 30 and 20-30ºC. Average

  6. Yolk-sac larval development of the substrate-brooding cichlid Archocentrus nigrofasciatus in relation to temperature.

    Science.gov (United States)

    Vlahos, Nikolaos; Vasilopoulos, Michael; Mente, Eleni; Hotos, George; Katselis, George; Vidalis, Kosmas

    2015-09-01

    In order to conserve and culture the cichlid fish Archocentrus nigrofasciatus, more information about its reproductive biology and its larval behavior and morphogenesis is necessary. Currently, temperatures ranging from 21 to 27 °C are used in ornamental aquaculture hatcheries. Lower temperatures are preferred to reduce the costs of water heating, and 23 °C is usually the selected temperature. However, there is limited information on culturing protocols for ornamental species and most of the information generated on this topic remains scarce. Thus, the present study examines the morphological development of Archocentrus nigrofasciatus during the yolk-sac period up to the age of 100 h post-hatching in relation to 2 temperature regimes used in ornamental aquaculture: a temperature of 27 °C (thermal optimum) and a decreased temperature of 23 °C (thermal tolerance). The results of this study suggest that the 27 °C temperature generates intense morphological changes in yolk-sac development in a shorter period. This has advantages as it reduces the time of yolk-sac larval development, and, thus, minimizes the transition phase to exogenous feeding and maximizes the efficiency at which yolk is converted into body tissues. The present paper provides necessary information to produce freshwater ornamental fish with better practices so as to increase larval survival and capitalize on time for growth. © 2015 International Society of Zoological Sciences, Institute of Zoology/Chinese Academy of Sciences and Wiley Publishing Asia Pty Ltd.

  7. The effect of temperature, matrix alloying and substrate coatings on wettability and shear strength of Al/Al2O3 couples

    Science.gov (United States)

    Sobczak, N.; Ksiazek, M.; Radziwill, W.; Asthana, R.; Mikulowski, B.

    2004-03-01

    A fresh approach has been advanced to examine in the Al/Al2O3 system the effects of temperature, alloying of Al with Ti or Sn, and Ti and Sn coatings on the substrate, on contact angles measured using a sessile-drop test, and on interface strength measured using a modified push-off test that allows shearing of solidified droplets with less than 90 deg contact angle. In the modified test, the solidified sessile-drop samples are bisected perpendicular to the drop/Al2O3 interface at the midplane of the contact circle to obtain samples that permit bond strength measurement by stress application to the flat surface of the bisected couple. The test results show that interface strength is strongly influenced by the wetting properties; low contact angles correspond to high interface strength, which also exhibits a strong temperature dependence. An increase in the wettability test temperature led to an increase in the interface strength in the low-temperature range where contact angles were large and wettability was poor. The room-temperature shear tests conducted on thermally cycled sessile-drop test specimens revealed the effect of chemically formed interfacial oxides; a weakening of the thermally cycled Al/Al2O3 interface was caused under the following conditions: (1) slow contact heating and short contact times in the wettability test, and (2) fast contact heating and longer contact times. The addition of 6 wt pct Ti or 7 wt pct Sn to Al only marginally influenced the contact angle and interfacial shear strength. However, Al2O3 substrates having thin (<1 µm) Ti coatings yielded relatively low contact angles and high bond strength, which appears to be related to the dissolution of the coating in Al and formation of a favorable interface structure.

  8. Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

    Energy Technology Data Exchange (ETDEWEB)

    Shimomoto, Kazuma; Ueno, Kohei [Institute of Industrial Science, University of Tokyo (Japan); Kobayashi, Atsushi [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Department of Applied Chemistry, University of Tokyo (Japan); Ohta, Jitsuo [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (JST-CREST), Tokyo (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (JST-CREST), Tokyo (Japan); Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi [Mitsubishi Chemical Group, Science and Technology Research Center, Higashi-Mamiana, Ushiku-shi, Ibaraki (Japan)

    2009-05-15

    The authors have grown high-quality m -plane In{sub 0.36}Ga{sub 0.64}N (1 anti 100) films on ZnO (1 anti 100) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m-plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two-dimensional mode. X-ray diffraction measurements have revealed that the m-plane InGaN films grow without phase separation reactions at RT. The full-width at half-maximum values of the 1 anti 100 X-ray rocking curves of films with X-ray incident azimuths perpendicular to the c- and a-axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space-mapping has revealed that a 50 nm thick m-plane In{sub 0.36}Ga{sub 0.64}N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

    International Nuclear Information System (INIS)

    Shimomoto, Kazuma; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi; Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi

    2009-01-01

    The authors have grown high-quality m -plane In 0.36 Ga 0.64 N (1 anti 100) films on ZnO (1 anti 100) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m-plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two-dimensional mode. X-ray diffraction measurements have revealed that the m-plane InGaN films grow without phase separation reactions at RT. The full-width at half-maximum values of the 1 anti 100 X-ray rocking curves of films with X-ray incident azimuths perpendicular to the c- and a-axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space-mapping has revealed that a 50 nm thick m-plane In 0.36 Ga 0.64 N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

    Science.gov (United States)

    He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

    2017-02-01

    The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

  11. Role of low O 2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

    Science.gov (United States)

    Pandis, Ch.; Brilis, N.; Tsamakis, D.; Ali, H. A.; Krishnamoorthy, S.; Iliadis, A. A.

    2006-06-01

    Undoped ZnO thin films have been grown on (100) Si substrates by pulsed laser deposition. The effect of growth parameters such as temperature, O 2 partial pressure and laser fluence on the structural and electrical properties of the films has been investigated. It is shown that the well-known native n-type conductivity, attributed to the activation of hydrogenic donor states, exhibits a conversion from n-type to p-type when the O 2 partial pressure is reduced from 10 -4 to 10 -7 Torr at growth temperatures lower than 400 °C. The p-type conductivity could be attributed to the dominant role of the acceptor Zn vacancies for ZnO films grown at very low O 2 pressures.

  12. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2-Ar sputtering gas mixture

    Science.gov (United States)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; de Andrés, A.; Prieto, C.

    2015-07-01

    The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H2 in the gas mixture of H2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H2/(Ar + H2) ratio in the range of 0.3-0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, ΦTC = T10/RS, than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices.

  13. High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

    Science.gov (United States)

    Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

    2018-06-01

    The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

  14. Temperature-responsive grafted polymer brushes obtained from renewable sources with potential application as substrates for tissue engineering

    Science.gov (United States)

    Raczkowska, Joanna; Stetsyshyn, Yurij; Awsiuk, Kamil; Lekka, Małgorzata; Marzec, Monika; Harhay, Khrystyna; Ohar, Halyna; Ostapiv, Dmytro; Sharan, Mykola; Yaremchuk, Iryna; Bodnar, Yulia; Budkowski, Andrzej

    2017-06-01

    The novel temperature-responsive poly(cholesteryl methacylate) (PChMa) coatings derived from renewable sources were synthesized and characterized. Temperature induced changes in wettability were accompanied by surface roughness modifications, traced with AFM. Topographies recorded for temperatures increasing from 5 to 25 °C showed a slight but noticeable increase of calculated root mean square (RMS) roughness by a factor of 1.5, suggesting a horizontal rearrangement in the structure of PChMa coatings. Another structural reordering was observed in the 55-85 °C temperature range. The recorded topography changed noticeably from smooth at 55 °C to very structured and rough at 60 °C and returned eventually to relatively smooth at 85 °C. In addition, temperature transitions of PChMa molecules were revealed by DSC measurements. The biocompatibility of the PChMa-grafted coatings was shown for cultures of granulosa cells and a non malignant bladder cancer cell (HCV29 line) culture.

  15. Co{sub 2}FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    Energy Technology Data Exchange (ETDEWEB)

    Belmeguenai, M., E-mail: belmeguenai.mohamed@univ-paris13.fr; Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P. [LSPM (CNRS-UPR 3407), 99 avenue Jean-Baptiste Clément, Université Paris 13, 93430 Villetaneuse (France); Gabor, M. S., E-mail: mihai.gabor@phys.utcluj.ro; Petrisor, T. [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Str. Memorandumului No. 28 RO-400114 Cluj-Napoca (Romania); Tiusan, C. [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Str. Memorandumului No. 28 RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F–54506 Vandoeuvre (France)

    2014-01-28

    10 nm and 50 nm Co{sub 2}FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T{sub a}), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T{sub a}, while the uniaxial anisotropy field is nearly unaffected by T{sub a} within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T{sub a}. Finally, the FMR linewidth decreases when increasing T{sub a}, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10{sup −3} and 1.3×10{sup −3} for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

  16. Mathematical modeling of the ethanol fermentation of cashew apple juice by a flocculent yeast: the effect of initial substrate concentration and temperature.

    Science.gov (United States)

    Pinheiro, Álvaro Daniel Teles; da Silva Pereira, Andréa; Barros, Emanuel Meneses; Antonini, Sandra Regina Ceccato; Cartaxo, Samuel Jorge Marques; Rocha, Maria Valderez Ponte; Gonçalves, Luciana Rocha B

    2017-08-01

    In this work, the effect of initial sugar concentration and temperature on the production of ethanol by Saccharomyces cerevisiae CCA008, a flocculent yeast, using cashew apple juice in a 1L-bioreactor was studied. The experimental results were used to develop a kinetic model relating biomass, ethanol production and total reducing sugar consumption. Monod, Andrews, Levenspiel and Ghose and Tyagi models were investigated to represent the specific growth rate without inhibition, with inhibition by substrate and with inhibition by product, respectively. Model validation was performed using a new set of experimental data obtained at 34 °C and using 100 g L -1 of initial substrate concentration. The model proposed by Ghose and Tyagi was able to accurately describe the dynamics of ethanol production by S. cerevisiae CCA008 growing on cashew apple juice, containing an initial reducing sugar concentration ranging from 70 to 170 g L -1 and temperature, from 26 to 42 °C. The model optimization was also accomplished based on the following parameters: percentage volume of ethanol per volume of solution (%V ethanol /V solution ), efficiency and reaction productivity. The optimal operational conditions were determined using response surface graphs constructed with simulated data, reaching an efficiency and a productivity of 93.5% and 5.45 g L -1  h -1 , respectively.

  17. A study on the change in the phase transition temperature of TiSi sub 2 by adding the Zr element on different Si substrates

    CERN Document Server

    Yoon, S H

    1999-01-01

    The stabilization of C49 TiSi sub 2 at high temperature was investigated by adding Zr element to Ti-silicide both on single crystalline Si(100) and amorphous Si substrates. This stabilization of the C49 TiSi sub 2 phase, which exhibits lower surface and interface energies than those of the C54 TiSi sub 2 phase, was expected to suppress the problems of Ti-silicide, such as the phase transition and the agglomeration. Ti and Zr films of 40 nm were co-deposited on Si substrates in a dual e-beam evaporation system equipped with an ion pump and at a base pressure of approx 5x10 sup - sup 9 Torr. The amounts of Zr contents added to the Ti-silicide were 5, 10 and 20 atomic %, and the thicknesses were monitored by in-situ quartz-crystal thickness monitors. After the deposition, films were annealed by using an ex-situ vacuum furnace at temperatures between 600 .deg. C and 900 .deg. C in 100 .deg. C increments. The phase identification and the chemical compositions were investigated by X-ray diffraction (XRD) and Auger ...

  18. Impact of deposition temperature on the properties of SnS thin films grown over silicon substrate—comparative study of structural and optical properties with films grown on glass substrates

    Science.gov (United States)

    Assili, Kawther; Alouani, Khaled; Vilanova, Xavier

    2017-11-01

    Tin sulfide (SnS) thin films were chemically deposited over silicon substrate in a temperature range of 250 °C-400 °C. The effects of deposition temperature on the structural, morphological and optical properties of the films were evaluated. All films present an orthorhombic SnS structure with a preferred orientation along (040). High absorption coefficients (in the range of 105 cm-1) were found for all obtained films with an increase in α value when deposition temperature decreases. Furthermore, the effects of substrate type were investigated based on comparison between the present results and those obtained for SnS films grown under the same deposition conditions but over glass substrate. The results suggest that the formation of SnS films onto glass substrate is faster than onto silicon substrate. It is found that the substrate nature affects the orientation growth of the films and that SnS films deposited onto Si present more defects than those deposited onto glass substrate. The optical transmittance is also restricted by the substrate type, mostly below 1000 nm. The obtained results for SnS films onto silicon suggest their promising integration within optoelectronic devices.

  19. An all optical system for studying temperature induced changes in polycrystalline diamond deposited on a tungsten carbide substrate

    CSIR Research Space (South Africa)

    Masina, BN

    2010-09-01

    Full Text Available In this poster the authors discussed the ability to heat an industrial diamond sample by means of optical absorption of a CO2 laser beam, and then measure the resulting temperature on the surface of the diamond optically by means of radiometry...

  20. Microbial Sulfate Reduction in Deep-Sea Sediments at the Guaymas Basin - Hydrothermal Vent Area - Influence of Temperature and Substrates

    DEFF Research Database (Denmark)

    ELSGAARD, L.; ISAKSEN, MF; JØRGENSEN, BB

    1994-01-01

    Microbial sulfate reduction was studied by a S-35 tracer technique in sediments from the hydrothermal vent site in Guaymas Basin, Gulf of California, Mexico. In situ temperatures ranged from 2.7-degrees-C in the overlying seawater to > 120-degrees-C at 30 cm depth in the hydrothermal sediment...

  1. Influence of annealing temperature on erbium ion electroluminescence in Si : (Er,O) diodes with (111) substrate orientation

    CERN Document Server

    Sobolev, N A; Nikolaev, Y A

    2001-01-01

    A study has been made of the influence of temperature of the second annealing that promotes formation of optically and electrically active centers o the erbium ion electroluminescence at lambda approx = 1.54 mu m wavelength in (111) Si : (Er,O) diodes. Doping has been performed by implantation of erbium and oxygen ions at 2.0, 1.6 MeV and 0.28, 0.22 MeV energies and 3 x 10 sup 1 sup 4 cm sup - sup 2 and 3 x 10 sup 1 sup 5 cm sup - sup 2 doses, respectively. The room temperature electroluminescence intensity under the breakdown regime increases with increasing annealing temperature from 700 to 950 deg C. After annealing in the range of 975-1100 deg C, erbium electroluminescence under the breakdown regime is not observed due to appearance of microplasmas. The injection electroluminescence intensity at 80 K decreases with increasing temperature from 700 to 1100 deg C

  2. Differences in structure and magnetic behavior of Mn-AlN films due to substrate material

    International Nuclear Information System (INIS)

    Sato, Takanobu; Nakatani, Ryoichi; Endo, Yasushi; Kirino, Fumiyoshi

    2009-01-01

    The structure and magnetic behavior of Mn-AlN (Al 1-x Mn x N, x = 0.03, 0.04) films deposited on thermally oxidized Si (001) substrates and sapphire (0001) substrates were studied. Mn-AlN films deposited on each substrate had a wuertzite-type AlN phase with a preferentially oriented c-axis. Mn-AlN films that were deposited on Si (001) substrate exhibited paramagnetic behavior. In addition to paramagnetic behavior, weak ferromagnetic behavior with curie temperatures higher than room temperature were observed for Mn-AlN films deposited on sapphire (0001) substrates.

  3. Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

    International Nuclear Information System (INIS)

    Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

    2013-01-01

    In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

  4. The Uses of Copper and Zinc Aluminates to Capture and Convert Carbon dioxide to Syn-gas at Higher Temperature

    Directory of Open Access Journals (Sweden)

    R.Y. Raskar

    2014-03-01

    Full Text Available The uses of copper and zinc aluminates to capture and convert the CO2 to syn-gas were studied at higher temperatures. The samples of copper and zinc aluminates were prepared by solid-solid fusion method by calcining in air at 900 oC for 3 h. Those samples were characterized by acidity/alkalinity, surface area, XRD pattern, IR, SEM images and screening to capture CO2 at the different temperatures. The phases Cu2O, CuO, ZnO, CuAl2O4 and ZnAl2O4 were found to be in the samples of zinc and copper aluminates. Acidity and surface area of the samples of copper and zinc aluminates were found to be in the ranges from 0.063 to 9.37 mmol g-1 and 3.04 to 11.8 m2 g-1, respectively. The captured CO2 by the samples of copper and zinc aluminates was found to be 19.92 to 31.52 wt% for the temperature range 40 to 850 oC. The captured CO2 at 550 oC by variable Zn/Al and Cu/Al mol ratio from 0.5 to 6 of the samples of copper and zinc aluminates was found to be 12.81 to 18.04 wt%. The reduction of carbon dioxide by zinc and copper aluminates was observed. The conversion of CO2 by methane over variable mol ratio of Cu/Al and Zn/Al in copper and zinc aluminates, respectively, at 500 oC showed the production of syn-gas by using the gas hourly space velocities (GHSV 12000, 12000 and 6000 ml. h-1. g-1 of helium, CO2 and methane. The conversions of CO2 by methane over the samples of zinc and copper aluminates were studied at different mol ratios of CO2 to methane.  © 2014 BCREC UNDIP. All rights reservedReceived: 13rd May 2013; Revised: 8th November 2013; Accepted: 8th November 2013[How to Cite: Raskar, R.Y., Gaikwad, A.G. (2014. The Uses of Copper and Zinc Aluminates to Cap-ture and Convert Carbon Dioxide to Syn-gas at Higher Temperature. Bulletin of Chemical Reaction Engineering & Catalysis, 9 (1: 1-15. (doi:10.9767/bcrec.9.1.4899.1-15[Permalink/DOI: http://dx.doi.org/10.9767/bcrec.9.1.4899.1-15

  5. Use of human wastes oxidized to different degrees in cultivation of higher plants on the soil-like substrate intended for closed ecosystems

    Science.gov (United States)

    Tikhomirov, A. A.; Kudenko, Yu. A.; Ushakova, S. A.; Tirranen, L. S.; Gribovskaya, I. A.; Gros, J.-B.; Lasseur, Ch.

    2010-09-01

    To close mass exchange loops in bioregenerative life support systems more efficiently, researchers of the Institute of Biophysics SB RAS (Krasnoyarsk, Russia) have developed a procedure of wet combustion of human wastes and inedible parts of plants using H 2O 2 in alternating electromagnetic field. Human wastes pretreated in this way can be used as nutrient solutions to grow plants in the phototrophic unit of the LSS. The purpose of this study was to explore the possibilities of using human wastes oxidized to different degrees to grow plants cultivated on the soil-like substrate (SLS). The treated human wastes were analyzed to test their sterility. Then we investigated the effects produced by human wastes oxidized to different degrees on growth and development of wheat plants and on the composition of microflora in the SLS. The irrigation solution contained water, substances extracted from the substrate, and certain amounts of the mineralized human wastes. The experiments showed that the human wastes oxidized using reduced amounts of 30% H 2O 2: 1 ml/g of feces and 0.25 ml/ml of urine were still sterile. The experiments with wheat plants grown on the SLS and irrigated by the solution containing treated human wastes in the amount simulating 1/6 of the daily diet of a human showed that the degree of oxidation of human wastes did not significantly affect plant productivity. On the other hand, the composition of the microbiota of irrigation solutions was affected by the oxidation level of the added metabolites. In the solutions supplemented with partially oxidized metabolites yeast-like microscopic fungi were 20 times more abundant than in the solutions containing fully oxidized metabolites. Moreover, in the solutions containing incompletely oxidized human wastes the amounts of phytopathogenic bacteria and denitrifying microorganisms were larger. Thus, insufficiently oxidized sterile human wastes added to the irrigation solutions significantly affect the composition of

  6. Study of the oxidation effects on isothermal solidification based high temperature stable Pt/In/Au and Pt/In/Ag thick film interconnections on LTCC substrate

    International Nuclear Information System (INIS)

    Kumar, Duguta Suresh; Khanna, P. K.; Suri, Nikhil; Sharma, R. P.

    2016-01-01

    The objective of the presented paper is to determine the oxidized phase compositions of indium lead-free solders during solidification at 190 ° C under room environment with the help of X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDX). Many lead-free solders alloys available oxidizes and have poor wetting properties. The oxidation of pure indium solder foil, Au, Pt, and Ag alloys were identified and investigated, in the process of isothermal solidification based solder joints construction at room environment and humidity. Both EDX and XRD characterization techniques were performed to trace out the amount of oxide levels and variety of oxide formations at solder interface respectively. The paper also aims to report the isothermal solidification technique to provide interconnections to pads on Low temperature co-fired ceramic (LTCC) substrate. It also elaborates advantages of isothermal solidification over the other methods of interconnection. Scanning electron microscope (SEM) used to identify the oxidized spots on the surface of Pt, Ag substrates and In solder. The identified oxides were reported.

  7. Influence of indium concentration and substrate temperature on the physical characteristics of chemically sprayed ZnO:In thin films deposited from zinc pentanedionate and indium sulfate

    International Nuclear Information System (INIS)

    Castaneda, L; Morales-Saavedra, O G; Cheang-Wong, J C; Acosta, D R; Banuelos, J G; Maldonado, A; Olvera, M de la L

    2006-01-01

    Chemically sprayed indium-doped zinc oxide thin films (ZnO:In) were deposited on glass substrates starting from zinc pentanedionate and indium sulfate. The influence of both the dopant concentration in the starting solution and the substrate temperature on the transport, morphology, composition, linear and nonlinear optical (NLO) properties of the ZnO:In thin films were studied. The structure of all the ZnO:In thin films was polycrystalline, and variation in the preferential growth with the indium content in the solution was observed: from an initial (002) growth in films with low In content, switching to a predominance of (101) planes for intermediate dopant regime, and finally turning to a (100) growth for heavily doped films. The crystallite size was found to decrease with doping concentration and range from 36 to 23 nm. The film composition and the dopant concentration were determined by Rutherford backscattering spectrometry; these results showed that the films are almost stoichiometric ZnO. The optimum deposition conditions leading to conductive and transparent ZnO:In thin films were also found. In this way a resistivity of 4 x 10 -3 Ω cm and an average transmittance in the visible spectra of 85%, with a (101) preferential growth, were obtained in optimized ZnO:In thin films

  8. Effect of Solution Molarity, Substrate Temperature and Spray Time on The Structural and Optical Properties Of ZnO Thin Films Deposited By Spray Pyrolysis

    International Nuclear Information System (INIS)

    Ramadan, A.A.; Hashem, H. M.; El-Sayed, S. M.; Ashour, A.H.; Abdel-Haleem, S.M.

    2013-01-01

    Zinc oxide thin films were deposited on a glass substrate by spray pyrolysis technique using solution of zinc acetate and air as the carrier gas. Effects of solution molarity, substrate temperature and spray time on films properties were investigated. All films deposited were characterized using X-ray diffraction for structural characterization and UV-VIS transmission spectrophotometry for optical properties. According to the analytical method, the type of crystal lattice was found to be hexagonal and X-ray diffraction (XRD) patterns showed that the films deposited were polycrystalline with (002) plane as preferential orientation. The values of lattice constant, grain size, micro strain and dislocation density of all samples were calculated. In addition, Optical behaviors of film samples were analyzed by obtaining transmission spectra, in the wavelength range of 350-800 nm. The UV-VIS spectroscopy shows the high transparency of ZnO films in the UV region. An optimization of the films has been carried out to determine the best preparation conditions.

  9. Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2015-01-01

    Full Text Available Transparent conducting titanium-doped zinc oxide (TZO thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2 flow ratios (RH and substrate temperatures (TS. The optimal RH value for achieving high conducting TZO:H thin film decreased from 10% to 1% when TS increased from RT to 300°C. The lowest resistivity of 9.2×10-4 Ω-cm was obtained as TS=100°C and RH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002 direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing RH. The average visible transmittance decreased with increasing RH for the RT-deposited film, while it had not considerably changed with different RH for the 300°C-deposited films. The optical bandgap increased as RH increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that TS=100°C and RH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

  10. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Vasiliev, A. L.; Imamov, R. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation); Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Trunkin, I. N. [National Research Centre “Kurchatov Institute” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)

    2017-01-15

    The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.

  11. Temperature effects on the growth and electrical properties of Er{sub 2}O{sub 3} films on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ji, T.; Nie, T.X.; Cui, J. [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Fang, Z.B. [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Yang, X.J.; Fan, Y.L.; Zhong, Z.Y. [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Jiang, Z.M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China)

    2012-02-01

    Er{sub 2}O{sub 3} films were grown on Ge (001) substrates at different temperatures by molecular beam epitaxy using metallic Er and molecular oxygen sources with otherwise identical conditions. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the microstructures and compositions of the films. The film deposited at room temperature is found to be composed of an Er{sub 2}O{sub 3} layer and an ErGe{sub x}O{sub y} interface layer with a thickness of 5.5 nm; the film grown at 300 Degree-Sign C has a mixed structure of Er{sub 2}O{sub 3} and ErGe{sub x}O{sub y} and the thickness was found to be reduced to 2.2 nm; the film grown at 450 Degree-Sign C becomes much rougher with voids formed underneath the film, having a mixed structure of three compounds of Er{sub 2}O{sub 3}, GeO and ErGe{sub x}O{sub y}. The growth mechanisms of the films at different temperatures are suggested. Current images obtained by tunneling atomic force microscopy show that the film grown at 450 Degree-Sign C has much more leaky spots than those grown at RT and 300 Degree-Sign C, which may arise from the formation of volatile GeO in the film.

  12. Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

    Science.gov (United States)

    Wang, Li-Min; Wang, Chih-Yi; Jheng, Ciao-Ren; Wu, Syu-Jhan; Sai, Chen-Kai; Lee, Ya-Ju; Chiang, Ching-Yu; Shew, Bor-Yuan

    2016-08-01

    The crystalline structure, morphology, composition, electrical transport, and optical properties of aluminum-doped zinc oxide (AZO) films are studied for applications in transparent electronics and optoelectronic devices. AZO thin films of c-axis-oriented growth and with different thickness were deposited on PET flexible plastic substrates at room temperature by rf magnetron sputtering. A larger grain size with a decreased strain ɛ value is observed in a thicker film, while changes in composition for films with different thicknesses are insignificant. Moreover, the resistivity of film decreases with increasing thickness, and the low-temperature electrical transport properties can be described by the scenario of quantum corrections to conductivity. With the room-temperature growth conditions, the resistivity of 4.5 × 10-4 Ω cm, carrier concentration of 6.4 × 1020 cm-3, and transmittance of 80 % for the 1100-nm-thick film are obtained. In addition, the optical bandgap energy decreases with increasing film thickness, which can be attributed to the bandgap renormalization and crystallite size effects.

  13. Substrate Temperature Effect on Charge Transport Performance of ZnO Electron Transport Layer Prepared by a Facile Ultrasonic Spray Pyrolysis in Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Jiang Cheng

    2015-01-01

    Full Text Available A novel ultrasonic spray pyrolysis for high-quality ZnO films based on zinc-ammonia solution was achieved in air. To investigate the structural and optical properties as well as the performance of polymer solar cells (PSCs, ZnO films at different substrate temperatures and thicknesses were prepared. The performance of poly(3-hexylthiophene:[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PCBM based PSC was found to be improved due to the ZnO films. The crystal structure and roughness of the ZnO films fabricated at different temperatures were found to affect the performance of PSCs. The optimized power conversion efficiency was found to be maximum for PSCs with ZnO films prepared at 200°C. The growth process of these ZnO films is very simple, cost-effective, and compatible for larger-scale PSC preparation. The precursor used for spray pyrolysis is environmentally friendly and helps to achieve ZnO film preparation at a relative low temperature.

  14. Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

    International Nuclear Information System (INIS)

    Arulkumaran, S.; Liu, Z.H.; Ng, G.I.; Cheong, W.C.; Zeng, R.; Bu, J.; Wang, H.; Radhakrishnan, K.; Tan, C.L.

    2007-01-01

    The influence of temperature (- 50 deg. C to + 200 deg. C) was studied on the DC and microwave characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on high resistivity Si substrate for the first time. The AlGaN/GaN HEMTs exhibited a current-gain cut-off frequency (f T ) of 11.8 GHz and maximum frequency of oscillation (f max ) of 27.5 GHz. When compared to room temperature values, about 4% and 10% increase in f T and f max and 23% and 39.5% decrease in f T and f max were observed when measured at - 50 deg. C and 200 deg. C, respectively. The improvement of I D , g m f T , and f max at - 50 deg. C is due to the enhancement of 2DEG mobility and effective electron velocity. The anomalous drain current reduction in the I-V curves were observed at low voltage region at the temperature ≤ 10 deg. C but disappeared when the temperature reached ≥ 25 deg. C. A positive threshold voltage (V th ) shift was observed from - 50 deg. C to 200 deg. C. The positive shift of V th is due to the occurrence of trapping effects in the devices. The drain leakage current decreases with activation energies of 0.028 eV and 0.068 eV. This decrease of leakage current with the increase of temperature is due to the shallow acceptor initiated impact ionization

  15. The Influence of Tuners and Temperature on the Higher Order Mode Spectrum for 1.3 GHz SCRF Cavities

    CERN Document Server

    Ainsworth, R; Zhang, P; Grecki, M; Baboi, N; Wamsat, T; Eddy, N

    2013-01-01

    Higher Order Modes (HOMs) are of concern for superconducting cavities as they can drive instabilities and so are usually damped and monitored. With special dedicated electronics, HOMs can provide information on the position on the beam. It has been proposed that piezo tuners used to keep the cavities operating at 1.3 GHz could alter the HOM spectrum altering the calibration constants used to read out the beam position affecting long term stability of the system. Also, of interest is how the cavity reacts to the slow tuner. Detuning and the retuning the cavity may alter the HOM spectrum. This is of particular interest for future machines not planning to use dedicated HOM damping as the tuning procedure may shift the frequency of HOMs onto dangerous resonances. The effect of temperature on the HOM spectrum is also investigated. An investigation of these effects has been performed at FLASH and the results are presented.

  16. MOCVD coating deposition of yttrium stabilized zirconia as backing for high-temperature superconductors on flexible substrates

    International Nuclear Information System (INIS)

    Jakschik, F.; Berger, W.; Seifert, L.; Nowick, W.; Leonhardt, G.

    1993-01-01

    The coating of carbon fibers with YSZ by means of the presented MOCVD process showed that in the bundle at temperatures between 500 - 600 C the coating thickness drops toward the center of the bundle. Sufficient homogeneity can be achieved only when the precipitation rate is selected slow enough to prevent the bundle edge from closing, or when the bundle is spread sufficiently open. The layers are on one hand ZrO 2 with incorporated carbon and on the other hand yttrium stabilized ZrO 2 with incorporated carbon. In both cases exclusively the cubic phase of the oxide was detected. The morphology of layers revealed only slight roughness with incorporation of relatively large nodules consisting of YSZ, caused by homogeneous gas phase reactions which are to be prevented. (orig.) [de

  17. Influence of substrate temperature and post annealing of CuGaO{sub 2} thin films on optical and structural properties

    Energy Technology Data Exchange (ETDEWEB)

    Bakar, Muhammad Hafiz Abu; Li, Lam Mui; Salleh, Saafie; Alias, Afishah [Faculty of Science and Natural Resources, Universiti Malaysia Sabah, 88999, Kota Kinabalu, Sabah (Malaysia); Mohamad, Khairul Anuar; Sulaiman, Salina [Faculty of Engineering, Universiti Malaysia Sabah, 88999 Kota Kinabalu, Sabah (Malaysia)

    2015-08-28

    A transparent p-type thin film CuGaO{sub 2} was deposited by using RF sputtering deposition method on plastic (PET) and glass substrate. The characteristics of the film is investigated. The thin film was deposited at temperature range from 50-250°C and the pressure inside the chamber is 1.0×10{sup −2} Torr and Argon gas was used as a working gas. The RF power is set to 100 W. The thickness of thin film is 300nm. In this experiment the transparency of the thin film is more than 70% for the visible light region. The band gap obtain is between 3.3 to 3.5 eV. The details of the results will be discussed in the conference.

  18. Studies on e-beam deposited transparent conductive films of In/sub 2/O/sub 3/ - Sn at moderate substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Agnihotry, S.A.; Saini, K.K.; Saxena, T.K.; Nagpal, K.C.; Chandra, S.

    1985-10-01

    An electron beam evaporation method is used to prepare In/sub 2/O/sub 3/ films with and without Sn doping. It is shown that highly transparent and conducting films can be prepared at substrate temperature as low as 200 C. The characteristic feature of such films is their high carrier density and high infrared reflectivity. The lowest resistivity is found to be 0.00024 ohm cm with a carrier concentration of 8 x 10 to the 20th per cu cm and mobility of about 30 per cm/V s at the doping level of 4 mol percent SnO/sub 2/. These polycrystalline films show a highly preferred orientation. On the basis of Hall measurements and structural data, sources of scattering in these films are suggested. 29 references.

  19. Effect of annealing temperature on the electrical transport properties of CaRuO3-δ thin films directly deposited on the Si substrate

    International Nuclear Information System (INIS)

    Paik, Hanjong; Kim, Youngha; No, Kwangsoo; Cann, David P.; Yoon, DongJoo; Kim, ByungIl; Kim, Yangsoo

    2007-01-01

    We investigate the effect of annealing temperature on the preferentially (110)-oriented CaRuO 3-δ (CRO) thin films directly prepared on Si(100) substrate by rf magnetron sputtering. Crystalline quality and electrical transport properties of the CRO thin films were modified by post-annealing treatment. It was obvious that 700 C post-annealing brought about excellent metallic characteristics with the elevation of carrier concentration and mobility. From this result, we suggested that enhanced (110) orientation, and the ratio of chemical composition Ru 4+ /Ca 2+ ion were responsible for the transport properties of CRO thin film. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. The influence of substrate temperature and spraying distance on the properties of plasma sprayed tungsten and steel coatings deposited in a shrouding chamber

    Czech Academy of Sciences Publication Activity Database

    Matějíček, Jiří; Vilémová, Monika; Nevrlá, Barbara; Kocmanová, Lenka; Veverka, Jakub; Halasová, Martina; Hadraba, Hynek

    2017-01-01

    Roč. 318, May (2017), s. 217-223 ISSN 0257-8972. [International Meeting on Thermal Spraying (RIPT)/7./. Limoges, 09.12.2015-11.12.2015] R&D Projects: GA ČR GB14-36566G EU Projects: European Commission(XE) 633053 - EUROfusion Institutional support: RVO:61389021 ; RVO:68081723 Keywords : Tungsten * Steel * Atmospheric plasma spraying * Shrouding * Substrate temperature * Fusion reactor materials * Plasma facing components Subject RIV: JK - Corrosion ; Surface Treatment of Materials; JK - Corrosion ; Surface Treatment of Materials (UFM-A) OBOR OECD: Coating and films; Coating and films (UFM-A) Impact factor: 2.589, year: 2016 http://www.sciencedirect.com/science/ article /pii/S0257897216310520

  1. Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

    International Nuclear Information System (INIS)

    Raypah, Muna E.; Devarajan, Mutharasu; Sulaiman, Fauziah

    2017-01-01

    The relationship between the photometric, electric, and thermal parameters of light-emitting diodes (LEDs) is important for optimizing the LED illumination design. Indium gallium aluminium phosphide (InGaAlP)-based thin-film surface-mounted device (SMD) LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum (Al) packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster (thermal transient tester) and TeraLED (thermal and radiometric characterization of power LEDs) systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency. (paper)

  2. Flip-chip integration of Si bare dies on polymeric substrates at low temperature using ICA vias made in dry film photoresist

    Science.gov (United States)

    Vásquez Quintero, Andrés; Briand, Danick; de Rooij, Nico F.

    2015-04-01

    In this paper, a low temperature flip-chip integration technique for Si bare dies is demonstrated on flexible PET substrates with screen-printed circuits. The proposed technique is based on patterned blind vias in dry film photoresist (DP) filled with isotropic conductive adhesive (ICA). The DP material serves to define the vias, to confine the ICA paste (80 µm-wide and potentially 25 µm-wide vias), as an adhesion layer to improve the mechanical robustness of the assembly, and to protect additional circuitry on the substrate. The technique is demonstrated using gold-bumped daisy chain chips (DCCs), with electrical vias resistances in the order to hundreds of milliohms, and peel/shear adhesion strengths of 0.7 N mm-1 and 3.2 MPa, respectively, (i.e. at 1.2 MPa of bonding pressure). Finally, the mechanical robustness to bending forces was optimized through flexural mechanics models by placing the neutral plane at the DCC/DP adhesive interface. The optimization was performed by reducing the Si thickness from 400 to 37 µm, and resulted in highly robust integrated assemblies withstanding 10 000 cycles of dynamic bending at 40 mm of radius, with relative changes in vias resistance lower than 20%. In addition, the electrical vias resistance and adhesion strengths were compared to samples integrated with anisotropic conductive adhesives (ACAs). Besides the low temperature and high integration resolution, the proposed method is compatible with large area fabrication and multilayer architectures on foil.

  3. Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE

    Science.gov (United States)

    Nishio, Mitsuhiro; Saito, Katsuhiko; Urata, Kensuke; Okamoto, Yasuhiro; Tanaka, Daichi; Araki, Yasuhiro; Abiru, Masakatsu; Mori, Eiichiro; Tanaka, Tooru; Guo, Qixin

    2015-03-01

    The growth of undoped and phosphorus (P)-doped Zn1-xMgxSeyTe1-y layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy was carried out. The compositions of Mg and Se, surface morphology, roughness and Raman property were characterized as a function of substrate temperature. Not only the compositions of Mg and Se but also the crystal quality of undoped Zn1-xMgxSeyTe1-y layer strongly depended upon the substrate temperature. Furthermore, the growth of Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe substrate was achieved independent of the transport rate of trisdimethylaminophosphorus. Undoped Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe led to improvement of surface roughness. On the other hand, P doping brought about deterioration of crystalline quality.

  4. Pd thin films on flexible substrate for hydrogen sensor

    Energy Technology Data Exchange (ETDEWEB)

    Öztürk, Sadullah [Fatih Sultan Mehmet Vakıf University, Engineering Faculty, Istanbul (Turkey); Kılınç, Necmettin, E-mail: nkilinc@nigde.edu.tr [Nigde University, Mechatronics Engineering Department, 51245 Nigde (Turkey); Nigde University, Nanotechnology Application and Research Center, 51245 Nigde (Turkey)

    2016-07-25

    In this work, palladium (Pd) thin films were prepared via RF sputtering method with various thicknesses (6 nm, 20 nm and 60 nm) on both a flexible substrate and a hard substrate. Hydrogen (H{sub 2}) sensing properties of Pd films on flexible substrate have been investigated depending on temperatures (25–100 °C) and H{sub 2} concentrations (600 ppm – 10%). The effect of H{sub 2} on structural properties of the films was also studied. The films were characterized by Scanning Electron Microscopy (SEM) and X-ray diffraction. It is found that whole Pd films on hard substrate show permanent structural deformation after exposed to 10% H{sub 2} for 30 min. But, this H{sub 2} exposure does not causes any structural deformation for 6 nm Pd film on flexible substrate and 6 nm Pd film on flexible substrate shows reversible sensor response up to 10% H{sub 2} concentration without any structural deformation. On the other hand, Pd film sensors that have the thicknesses 20 nm and 60 nm on flexible substrate are irreversible for higher H{sub 2} concentration (>2%) with film deformation. The sensor response of 6 nm Pd film on flexible substrate increased with increasing H{sub 2} concentration up 4% and then saturated. The sensitivity of the film decreased with increasing operation temperature. - Highlights: • Pd thin films fabricated by RF sputtering on both flexible and hard substrates. • Structural deformation observed for films on hard substrate after exposing 10% H{sub 2}. • 6 nm Pd film on flexible substrate shows reversible sensor response up to 10% H{sub 2}. • H{sub 2} sensing properties of film on flexible substrate investigated depending on temperature and concentration. • The sensitivity of the film decreased with increasing operation temperature.

  5. Experiments on the contact angle of n-propanol on differently prepared silver substrates at various temperatures and implications for the properties of silver nanoparticles

    Science.gov (United States)

    Pinterich, T.; Winkler, P. M.; Vrtala, A. E.; Wagner, P. E.

    2011-08-01

    In this paper we present the results of contact angle measurements between n-propanol and silver substrates in the temperature range from -10 °C to 30 °C. The interest in a potential temperature dependence of contact angles originates from recent experiments by S. Schobesberger et al. (Schobesberger S., Strange temperature dependence observed for heterogeneous nucleation of n-propanol vapor on NaCl particles. Master's thesis, University of Vienna, 2008; Schobesberger S. et al., Experiments on the temperature dependence of heterogeneous nucleation on NaCl and Ag particles. In preparation.) investigating the temperature dependence for heterogeneous nucleation of n-propanol vapour on NaCl and on silver particles. We determined dynamic advancing θ a and receding θ r angles on variously prepared silver probes. The Dynamic Wilhelmy method (Wilhelmy L., Über die Abhängigkeit der Capillaritäts-Constanten des Alkohols von Substanz und Gestalt des benetzten festen Körpers. Ann. Phys. Chem., 199:177-217, 1863) was applied using a Krüss K12 Tensiometer, with a refrigerated double-walled glass top. With respect to its potential influence on heterogeneous nucleation mainly the advancing angle is of interest. The uniform probe geometry required was achieved by accurate cutting and by multiple polishing stages up to the accomplishment of a 0.04 μm grain size. The original probes consist of 925 sterling silver including a 7.5% copper content. Additional coating with silver pro Analysi (p.A.) was applied making use of pure silver powder evaporation process via Physical Vapour Deposition (PVD). Results show that a surface contamination by copper cannot be neglected for the specification of contact angles. It turned out that additional PVD coatings not only change the values of θa but also their temperature dependence. With increasing the number of coatings of a plate the contact angle decreases and its temperature dependence inverts. Since the contact angle hysteresis

  6. The effects of temperature and pH on the kinetics of reactions between catalase and its suicide substrate hydrogen peroxide.

    Science.gov (United States)

    Ghadermarzi, M; Moosavi-Movahedi, A A

    1997-12-01

    Variation of initial (intact) activity (ai), inactivation rate constant (ki) and the partition ratio (r) of bovine liver catalase in the reaction with its suicide substrate, hydrogen peroxide, were determined in workable ranges of temperature (17-42 degrees C) or pH (5-10.5), using the data of progress curves. The changes of temperature had a slight effect on ai, giving a Q10 of 1.15 for the enzymatic breakdown of H2O2, corresponding to an improved value for its activation energy of 8.8 +/- l kJ.mol-1. In contrast, the ki was greatly increased by elevation of temperature, giving a Q10 of 2.1 for the suicide inactivation reaction of catalase. Consequently, a significant decrease of r was observed by increasing of temperature. In pH studies, decreasing of pH from 7.0 to 5.0 led to reduction of ai whereas the ki value was not effected significantly, possibly due to the parallel changes in affinities to free catalase and compound I for H2O2. Reduction of ki and alpha i were observed at pH > 9.5, where reversible dissociation of tetrameric enzyme into catalytically inactive subunits is possible. The r had a maximum value at pH around 7.5, similar to that of catalase activity. The effect of ionic strength on the above kinetic parameters was studied. There was not an observable influence when the ammonium sulfate concentration was below l M.

  7. Effects of vacuum ultraviolet photons, ion energy and substrate temperature on line width roughness and RMS surface roughness of patterned 193 nm photoresist

    International Nuclear Information System (INIS)

    Titus, M J; Graves, D B; Yamaguchi, Y; Hudson, E A

    2011-01-01

    We present a comparison of patterned 193 nm photoresist (PR) line width roughness (LWR) of samples processed in a well characterized argon (Ar) inductively coupled plasma (ICP) system to RMS surface roughness and bulk chemical modification of blanket 193 nm PR samples used as control samples. In the ICP system, patterned and blanket PR samples are irradiated with Ar vacuum ultraviolet photons (VUV) and Ar ions while sample temperature, photon flux, ion flux and ion energy are controlled and measured. The resulting chemical modifications to bulk 193 nm PR (blanket) and surface roughness are analysed with Fourier transform infrared spectroscopy and atomic force microscopy (AFM). LWR of patterned samples are measured with scanning electron microscopy and blanket portions of the patterned PRs are measured with AFM. We demonstrate that with no RF-bias applied to the substrate the LWR of 193 nm PR tends to smooth and correlates with the smoothing of the RMS surface roughness. However, both LWR and RMS surface roughness increases with simultaneous high-energy (≥70 eV) ion bombardment and VUV-irradiation and is a function of exposure time. Both high- and low-frequency LWR correlate well with the RMS surface roughness of the patterned and blanket 193 nm PR samples. LWR, however, does not increase with temperatures ranging from 20 to 80 deg. C, in contrast to the RMS surface roughness which increases monotonically with temperature. It is unclear why LWR remains independent of temperature over this range. However, the fact that blanket roughness and LWR on patterned samples, both scale similarly with VUV fluence and ion energy suggests a similar mechanism is responsible for both types of surface morphology modifications.

  8. Effects of vacuum ultraviolet photons, ion energy and substrate temperature on line width roughness and RMS surface roughness of patterned 193 nm photoresist

    Energy Technology Data Exchange (ETDEWEB)

    Titus, M J; Graves, D B [Department of Chemical Engineering, University of California, Berkeley, CA 94720 (United States); Yamaguchi, Y; Hudson, E A, E-mail: graves@berkeley.edu [Lam Research Corporation, 4400 Cushing Parkway, Freemont, CA 94538 (United States)

    2011-03-02

    We present a comparison of patterned 193 nm photoresist (PR) line width roughness (LWR) of samples processed in a well characterized argon (Ar) inductively coupled plasma (ICP) system to RMS surface roughness and bulk chemical modification of blanket 193 nm PR samples used as control samples. In the ICP system, patterned and blanket PR samples are irradiated with Ar vacuum ultraviolet photons (VUV) and Ar ions while sample temperature, photon flux, ion flux and ion energy are controlled and measured. The resulting chemical modifications to bulk 193 nm PR (blanket) and surface roughness are analysed with Fourier transform infrared spectroscopy and atomic force microscopy (AFM). LWR of patterned samples are measured with scanning electron microscopy and blanket portions of the patterned PRs are measured with AFM. We demonstrate that with no RF-bias applied to the substrate the LWR of 193 nm PR tends to smooth and correlates with the smoothing of the RMS surface roughness. However, both LWR and RMS surface roughness increases with simultaneous high-energy ({>=}70 eV) ion bombardment and VUV-irradiation and is a function of exposure time. Both high- and low-frequency LWR correlate well with the RMS surface roughness of the patterned and blanket 193 nm PR samples. LWR, however, does not increase with temperatures ranging from 20 to 80 deg. C, in contrast to the RMS surface roughness which increases monotonically with temperature. It is unclear why LWR remains independent of temperature over this range. However, the fact that blanket roughness and LWR on patterned samples, both scale similarly with VUV fluence and ion energy suggests a similar mechanism is responsible for both types of surface morphology modifications.

  9. Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Zhiwei; Walker, Amy V., E-mail: amy.walker@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, RL10, 800 W. Campbell Rd., Richardson, Texas 75080 (United States)

    2015-09-15

    The room temperature atomic layerlike deposition (ALLD) of ZnS on functionalized self-assembled monolayers (SAMs) was investigated, using diethyl zinc (DEZ) and in situ generated H{sub 2}S as reactants. Depositions on SAMs with three different terminal groups, –CH{sub 3,} –OH, and –COOH, were studied. It was found that the reaction of DEZ with the SAM terminal group is critical in determining the film growth rate. Little or no deposition is observed on –CH{sub 3} terminated SAMs because DEZ does not react with the methyl terminal group. ZnS does deposit on both –OH and –COOH terminated SAMs, but the grow rate on –COOH terminated SAMs is ∼10% lower per cycle than on –OH terminated SAMs. DEZ reacts with the hydroxyl group on –OH terminated SAMs, while on –COOH terminated SAMs it reacts with both the hydroxyl and carbonyl bonds of the terminal groups. The carbonyl reaction is found to lead to the formation of ketones rather than deposition of ZnS, lowering the growth rate on –COOH terminated SAMs. SIMS spectra show that both –OH and –COOH terminated SAMs are covered by the deposited ZnS layer after five ALLD cycles. In contrast to ZnO ALLD where the composition of the film differs for the first few layers on –COOH and –OH terminated SAMs, the deposited film composition is the same for both –COOH and –OH terminated SAMs. The deposited film is found to be Zn-rich, suggesting that the reaction of H{sub 2}S with the Zn-surface adduct may be incomplete.

  10. Effect of Ag doping on the structural, electrical and optical properties of ZnO grown by MOCVD at different substrate temperatures

    Science.gov (United States)

    Ievtushenko, A.; Karpyna, V.; Eriksson, J.; Tsiaoussis, I.; Shtepliuk, I.; Lashkarev, G.; Yakimova, R.; Khranovskyy, V.

    2018-05-01

    ZnO films and nanostructures were deposited on Si substrates by MOCVD using single source solid state zinc acetylacetonate (Zn(AA)) precursor. Doping by silver was realized in-situ via adding 1 and 10 wt. % of Ag acetylacetonate (Ag(AA)) to zinc precursor. Influence of Ag on the microstructure, electrical and optical properties of ZnO at temperature range 220-550 °C was studied by scanning, transmission electron and Kelvin probe force microscopy, photoluminescence and four-point probe electrical measurements. Ag doping affects the ZnO microstructure via changing the nucleation mode into heterogeneous and thus transforming the polycrystalline films into a matrix of highly c-axis textured hexagonally faceted nanorods. Increase of the work function value from 4.45 to 4.75 eV was observed with Ag content increase, which is attributed to Ag behaviour as a donor impurity. It was observed, that near-band edge emission of ZnO NS was enhanced with Ag doping as a result of quenching deep-level emission. Upon high doping of ZnO by Ag it tends to promote the formation of basal plane stacking faults defect, as it was observed by HR TEM and PL study in the case of 10 wt.% of Ag. Based on the results obtained, it is suggested that NS deposition at lower temperatures (220-300 °C) is more favorable for p-type doping of ZnO.

  11. Nanocrystalline transparent SnO{sub 2}-ZnO films fabricated at lower substrate temperature using a low-cost and simplified spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K.; Sakthivel, B.; Philominathan, P. [P. G. and Research Department of Physics, AVVM. Sri Pushpam College, Poondi, Thanjavur, Tamilnadu 613503 (India)

    2010-03-15

    Nanocrystalline and transparent conducting SnO{sub 2}- ZnO films were fabricated by employing an inexpensive, simplified spray technique using a perfume atomizer at relatively low substrate temperature (360{+-}5 C) compared with conventional spray method. The structural studies reveal that the SnO{sub 2}-ZnO films are polycrystalline in nature with preferential orientation along the (101) plane. The dislocation density is very low (1.48 x 10{sup 15}lines/m{sup 2}), indicating the good crystallinity of the films. The crystallite size of the films was found to be in the range of 26-34 nm. The optical transmittance in the visible range and the optical band gap are 85% and 3.6 eV respectively. The sheet resistance increases from 8.74 k{omega}/{open_square} to 32.4 k{omega}/{open_square} as the zinc concentration increases from 0 to 40 at.%. The films were found to have desirable figure of merit (1.63 x 10{sup -2} ({omega}/{open_square}){sup -1}), low temperature coefficient of resistance (-1.191/K) and good thermal stability. This simplified spray technique may be considered as a promising alternative to conventional spray for the massive production of economic SnO{sub 2} - ZnO films for solar cells, sensors and opto-electronic applications. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Comparative seed germination traits in alpine and subalpine grasslands: higher elevations are associated with warmer germination temperatures.

    Science.gov (United States)

    Fernández-Pascual, E; Jiménez-Alfaro, B; Bueno, Á

    2017-01-01

    Seed germination traits in alpine grasslands are poorly understood, despite the sensitivity of these communities to climate change. We hypothesise that germination traits predict species occurrence along the alpine-subalpine elevation gradient. Phylogenetic comparative analyses were performed using fresh seeds of 22 species from alpine and subalpine grasslands (1600-2400 m) of the Cantabrian Mountains, Spain (43° N, 5° W). Laboratory experiments were conducted to characterise germinability, optimum germination temperature and effect of cold and warm stratification on dormancy breaking. Variability in these traits was reduced by phylogenetic principal component analysis (phyl.PCA). Phylogenetic generalised least squares regression (PGLS) was used to fit a model in which species average elevation was predicted from their position on the PCA axes. Most subalpine species germinated in snow-like conditions, whereas most alpine species needed accumulation of warm temperatures. Phylogenetic signal was low. PCA1 ordered species according to overall germinability, whilst PCA2 ordered them according to preference for warm or cold germination. PCA2 significantly predicted species occurrence in the alpine-subalpine gradient, as higher elevation species tended to have warmer germination preferences. Our results show that germination traits in high-mountain grasslands are closely linked to the alpine-subalpine gradient. Alpine species, especially those from stripped and wind-edge communities, prefer warmer germination niches, suggesting that summer emergence prevents frost damage during seedling establishment. In contrast, alpine snowfield and subalpine grassland plants have cold germination niches, indicating that winter emergence may occur under snow to avoid drought stress. © 2016 German Botanical Society and The Royal Botanical Society of the Netherlands.

  13. The effect of substrate temperature upon the compositions of Mg and Se in Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Nishio, M.; Ito, R.; Tanaka, K.; Urata, K.; Nakamura, Y.; Tanaka, T. [Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Saito, K.; Guo, Q.X. [Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)

    2014-07-15

    The growth of Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layers was performed on (100) ZnTe substrate by metalorganic vapour phase epitaxy using dimethylzinc, bis-methylcyclopentadienyl-magnesium, diethyltelluride and diethylselenide. The effects of substrate temperature upon the compositions of Mg and Se have been investigated. The Mg composition in Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer is significantly enhanced at low substrate temperature. Although the Se composition decreases with decreasing the substrate temperature, Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer with a relatively high Se composition of 0.3 is obtainable at a low substrate temperature as low as 380 C. For all the layers, a two-mode behaviour with ZnTe- and MgTe-like longitudinal optical phonon modes is confirmed by Raman scattering. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. High-temperature Josephson transition, formed in epitaxial step from CeO2 in the process of growth on a sapphire substrate

    International Nuclear Information System (INIS)

    Kotelyanskij, I.M.; Mashtakov, A.D.; Mozhaev, P.B.; Ovsyannikov, G.A.; Dukaev, Yu.M.

    1995-01-01

    Results on production and investigation into Josephson without applying the substrate surface ion etching, are presented for the first time. This method of stage formation allows one to obtain a practically defectless surface of lateral face and substrate. Besides, it allows one to form a stage of material, different from the substrate material

  15. Influence of deposition substrate temperature on the morphology and molecular orientation of chloroaluminum phthalocyanine films as well the performance of organic photovoltaic cells

    International Nuclear Information System (INIS)

    Zheng, Yan-Qiong; Zhang, Jing; Yang, Fang; Wei, Bin; Zhang, Jianhua; Wang, Zixing; Komino, Takeshi; Adachi, Chihaya; Pu, Wenhong; Yang, Changzhu

    2015-01-01

    The dependence of the morphology of neat chloroaluminum phthalocyanine (ClAlPc) films on substrate temperature (T_s_u_b) during deposition is investigated by variable angle spectroscopic ellipsometry (VASE), x-ray diffraction (XRD), and atomic force microscopy (AFM) to obtain detailed information about the molecular orientation, phase separation, and crystallinity. AFM images indicate that both grain size and root mean square (RMS) roughness noticeably increase with T_s_u_b both in neat and blend films. Increasing T_s_u_b from room temperature to 420 K increases the horizontal orientation of the ClAlPc molecules with an increase of the mean molecular tilt angle from 60.13° (300 K) to 65.86° (420 K). The UV–vis absorption band of the corresponding films increases and the peak wavelength slightly red shifts with the T_s_u_b increase. XRD patterns show a clear diffraction peak at T_s_u_b over 390 K, implying the π-stacking of interconnected ClAlPc molecules at high T_s_u_b. Planar and bulk heterojunction (BHJ) photovoltaic cells containing pristine ClAlPc films and ClAlPc:C_6_0 blend films fabricated at T_s_u_b of 390 K show increases in the power conversion efficiency (η_P_C_E) of 28% (η_P_C_E = 3.12%) and 36% (η_P_C_E = 3.58%), respectively, relative to devices as-deposited at room temperature. The maximum short circuit current in BHJs is obtained at 390 K in the T_s_u_b range from 300 K to 450 K. (paper)

  16. GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

    Science.gov (United States)

    Kisan Patil, Pallavi; Luna, Esperanza; Matsuda, Teruyoshi; Yamada, Kohki; Kamiya, Keisuke; Ishikawa, Fumitaro; Shimomura, Satoshi

    2017-03-01

    We report a GaAs0.96Bi0.04/GaAs multiple quantum well (MQW) light emitting diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) technique. In particular, the QWs and the barriers in the intrinsic region were grown at the different temperatures of {T}{{GaAsBi}} = 350 °C and {T}{{GaAs}} = 550 ^\\circ {{C}}, respectively. Investigations of the microstructure using transmission electron microscopy (TEM) reveal homogeneous MQWs free of extended defects. Furthermore, the local determination of the Bi distribution profile across the MQWs region using TEM techniques confirm the uniform Bi distribution, while revealing a slightly chemically graded GaAs-on-GaAsBi interface due to Bi surface segregation. Despite this small broadening, we found that Bi segregation is significantly reduced (up to 18% reduction) compared to previous reports on Bi segregation in GaAsBi/GaAs MQWs. Hence, the TST procedure proves as a very efficient method to reduce Bi segregation and thus increase the quality of the layers and interfaces. These improvements positively reflect in the optical properties. Room temperature photoluminescence and electroluminescence (EL) at 1.23 μm emission wavelength are successfully demonstrated using TST MQWs containing less Bi content than in previous reports. Finally, LED fabricated using the present TST technique show current-voltage (I-V) curves with a forward voltage of 3.3 V at an injection current of 130 mA under 1.0 kA cm-2 current excitation. These results not only demonstrate that TST technique provides optical device quality GaAsBi/GaAs MQWs but highlight the relevance of TST-based growth techniques on the fabrication of future heterostructure devices based on dilute bismides.

  17. Effects of high temperature treatment on microstructure and mechanical properties of laser-clad NiCrBSi/WC coatings on titanium alloy substrate

    International Nuclear Information System (INIS)

    Li, Guang Jie; Li, Jun; Luo, Xing

    2014-01-01

    Laser-clad composite coatings on the Ti6Al4V substrate were heat-treated at 700, 800, and 900 °C for 1 h. The effects of post-heat treatment on the microstructure, microhardness, and fracture toughness of the coatings were investigated by scanning electron microscopy, X-ray diffractometry, energy dispersive spectroscopy, and optical microscopy. The wear resistance of the coatings was evaluated under dry reciprocating sliding friction at room temperature. The coatings mainly comprised some coarse gray blocky (W,Ti)C particles accompanied by the fine white WC particles, a large number of black TiC cellular/dendrites, and the matrix composed of NiTi and Ni 3 Ti; some unknown rich Ni- and Ti-rich particles with sizes ranging from 10 nm to 50 nm were precipitated and uniformly distributed in the Ni 3 Ti phase to form a thin granular layer after heat treatment at 700 °C. The granular layer spread from the edge toward the center of the Ni 3 Ti phase with increasing temperature. A large number of fine equiaxed Cr 23 C 6 particles with 0.2–0.5 μm sizes were observed around the edges of the NiTi supersaturated solid solution when the temperature was further increased to 900 °C. The microhardness and fracture toughness of the coatings were improved with increased temperature due to the dispersion-strengthening effect of the precipitates. Dominant wear mechanisms for all the coatings included abrasive and delamination wear. The post-heat treatment not only reduced wear volume and friction coefficient, but also decreased cracking susceptibility during sliding friction. Comparatively speaking, the heat-treated coating at 900 °C presented the most excellent wear resistance. - Highlights: • TiC + WC reinforced intermetallic compound matrix composite coatings were produced. • The formation mechanism of the reinforcements was analyzed. • Two precipitates were generated at elevated temperature. • Cracking susceptibility and microhardness of the coatings were improved

  18. Effects of substrate temperature on sprayed ZnO thin films optical and morphological properties in terms of Amlouk-Boubaker opto-thermal expansivity psi{sub AB}

    Energy Technology Data Exchange (ETDEWEB)

    Amlouk, A.; Boubaker, K. [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia); Amlouk, M., E-mail: mmbb11112000@yahoo.f [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia)

    2009-08-12

    In this study, ZnO thin films have been grown using spray pyrolysis technique on glass substrates under various substrate temperature (400, 420, 440, 460, 480 and 500 deg. C). The Precursors were Propan-2-ol C{sub 3}H{sub 8}O and zinc acetate zinc Zn(CH{sub 3}CO{sub 2}){sub 2} in acidified medium (acetic acid CH{sub 3}CO{sub 2}H, pH = 5). XRD analyses yielded a strong (0 0 2) X-ray diffraction line for low substrate temperatures (400-420 deg. C). This c-axis preferential orientation was not observed for substrate temperature beyond 440 deg. C. Atomic Force Microscopy (AFM) analyses monitored clusters with variable shapes (pyramidal for high temperatures and rounded concentrated ones for temperatures below 440 deg. C). Finally, the optical measurements were carried out via transmittance T(lambda) and reflectance R(lambda) spectra inside 250-2500 nm domain. Thanks to optical measurements, the conjoint optical and thermal properties were deduced using the Amlouk-Boubaker opto-thermal expansively psi{sub AB}.

  19. New methods to the determination of acid-base constants of solid substrates (oxides and carbon fibres) and of the transition temperatures of polymers adsorbed on oxides

    International Nuclear Information System (INIS)

    Hamieh, Tayssir

    2000-01-01

    Full text.Inverse gas chromatography technique at infinite dilution was used to calculate the acidic and basic surface characteristics of some solid substrates like oxides: Mono gal, MgO, ZnO, SiO 2 and Al 2 O 3 , four different carbon fibres and polymers as PMMA at various tacticities. We determined the specific interactions between them and model organic molecules and showed the amphoteric feature of such solids. We proved that the usual relation giving the specific enthalpy of adsorption (ΔH s P) of a polar molecule adsorbed on a solid: (-ΔH s P) = (K A DN + K D AN) was not correct for oxides and carbon fibres. We proposed a new relashionship by adding a third parameter K reflecting the amphoteric character of the solid according to: (-ΔH s P) = K A .DN + K D .AN - K. AN.DN. On the other hand, we used the inverse gas chromatography (IGC) at infinite dilution to determine the glass transition temperatures and other transitions of the systems PMMA/SiO 2 and PMMA/Al 2 O 3 , at various covered surface fractions and for various tacticities of the polymer (atactic, isotactic and syndiotactic). The maxima of the dispersive component of the surface energy γ s d of our two systems, obtained by IGC at infinite dilution, indicated clearly the presence of transition temperatures (glass or local transitions). The study of the chemical physical properties of PMMA/SiO 2 and PMMA/Al 2 O 3 , revealed an important difference in the acidic and basic behaviour, in Lewis terms, of oxide covered by various concentrations of PMMA. This study also highlighted an important effect of the tacticity of the polymer on the acidic basic character of PMMA adsorbed on oxides

  20. Room temperature trapping of stibine and bismuthine onto quartz substrates coated with nanostructured palladium for total reflection X-ray fluorescence analysis

    Energy Technology Data Exchange (ETDEWEB)

    Romero, Vanesa; Costas-Mora, Isabel; Lavilla, Isela; Bendicho, Carlos, E-mail: bendicho@uvigo.es

    2015-05-01

    In this work, a novel method for determining Sb and Bi based on the trapping of their covalent hydrides onto quartz reflectors coated with immobilized palladium nanoparticles (Pd NPs) followed by total reflection X-ray fluorescence (TXRF) analysis is proposed. Pd NPs were synthesized by chemical reduction of the metal precursor using a mixture of water:ethanol as mild reducing agent. Silanization using 3-mercaptopropyltrimethoxysilane (MPTMS) was performed for the immobilization of Pd NPs onto the quartz substrates. Volatile hydrides (stibine and bismuthine) generated by means of a continuous flow system were flushed onto the immobilized Pd NPs and retained by catalytic decomposition. As a result of the high catalytic activity of the nanostructured film, trapping can be performed at ambient temperature with good efficiency. Limits of detection (LODs) were 2.3 and 0.70 μg L{sup −1} for Sb and Bi, respectively. Enrichment factors of 534 and 192 were obtained for Sb and Bi, respectively. The new method was applied for the analysis of several matrices (milk, soil, sediment, cutaneous powder). Recoveries were in the range of 98.4–101% for both elements with a relative standard deviation of 2.5% (N = 5). - Highlights: • A novel method for trapping covalent hydrides of antimony and bismuth is proposed. • Emphasis is placed on the application of Pd nanoparticles as trapping surface. • The nanostructured surface provides high catalytic activity at ambient temperature. • Analysis by total reflection X-ray fluorescence is performed. • Determination of Bi and Sb in different matrices is carried out.

  1. (110)-Textured Ca-doped BiFeO_3 film on refined Pt(111) electrode layer on glass substrate at reduced temperature

    International Nuclear Information System (INIS)

    Chang, H.W.; Shen, C.Y.; Yuan, F.T.; Tien, S.H.; Lin, S.Y.; Chen, W.A.; Wang, C.R.; Tu, C.S.; Jen, S.U.

    2016-01-01

    Multiferroic and photovoltaic properties of polycrystalline Bi_0_._8_5Ca_0_._1_5FeO_3 (BCFO) film on refined Pt(111) electrode buffered glass substrate have been studied. Optimized Pt(111) electrode layer having large grain size and smooth morphology enables the development of highly (110)-textured BCFO film at a temperature as low as 450 °C. The prepared BCFO film has dense microstructure, fine grain size, and smooth surface morphology. Good ferroelectric properties with the remanent polarization (2P_r) of 108 μC/cm"2 and electrical coercive field of 405 kV/cm are achieved. Improved ferromagnetic properties with magnetization of 9.2 emu/cm"3 and coercivity of 1250 Oe are also attained. Significant PV properties with open-circuit photovoltage of 0.49 V and the short-circuit photocurrent of 67.4 μA/cm"2 at illumination intensity of 228 mW/cm"2 are observed, which are comparable to BCFO ceramics or BFO epitaxial films. - Highlights: • BCFO polycrystalline film with (110) texture is formed on Pt(111) electrode. • Pt(111) underlayer induces BCFO(110) film with fine grain and flat surface. • Good multiferroic and photovoltaic properties are achieved simultaneously. • Improved multiferroic and photovoltaic properties makes BCFO film a multifunctional material for advanced applications.

  2. Optical and Structural Properties of Multi-wall-carbon-nanotube-modified ZnO Synthesized at Varying Substrate Temperatures for Highly Efficient Light Sensing Devices

    Directory of Open Access Journals (Sweden)

    Valentine Saasa

    2015-12-01

    Full Text Available Structural, optical and light detection properties on carbon-nanotube-modified ZnO thin films grown at various temperatures from room to 1173 K are investigated. The optical band gap values calculated from reflectivity data show a hump at a critical temperature range of 873-1073 K. Similar trends in surface roughness as well as crystallite size of the films are observed. These changes have been attributed to structural change from wurzite hexagonal to cubic carbon modified ZnO as also validated by x-ray diffraction, RBS and PIXE of these layers. UV and visible light detection properties show similar trends. It is demonstrated that the present films can sense both UV and visible light to a maximum response efficiency of 66 % which is much higher than the last reported efficiency 10 %. This high response is given predominantly by cubic crystallite rather than the wurzite hexagonal composites.

  3. Low temperature solid oxide fuel cells with proton-conducting Y:BaZrO{sub 3} electrolyte on porous anodic aluminum oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Seungbum [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Mechanical and Aerospace Engineering, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of); Su, Pei-Chen [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of); Cha, Suk Won, E-mail: swcha@snu.ac.kr [School of Mechanical and Aerospace Engineering, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of)

    2013-10-01

    This paper presents the architecture of a nano thin-film yttrium-doped barium zirconate (BYZ) solid-oxide fuel cell that uses nanoporous anodic aluminum oxide (AAO) as a supporting and gas-permeable substrate. The anode was fabricated by sputtering 300 nm platinum thin film that partially covered the AAO surface pores, followed by an additional conformal platinum coating to tune the pore size by atomic layer deposition. Two different nano-porous anode structures with a pore size of 10 nm or 50 nm were deposited. Proton-conducting BYZ ceramic electrolyte with increasing thicknesses of 300, 600, and 900 nm was deposited on top of the platinum anode by pulsed laser deposition, followed by a 200 nm layer of porous Pt sputtered on BYZ electrolyte as a cathode. The open circuit voltage (OCV) of the fuel cells was characterized at 250 °C with 1:1 volumetric stoichiometry of a methanol/water vapor mixture as the fuel. The OCVs were 0.17 V with a 900 nm-thick BYZ electrolyte on 50 nm pores and 0.3 V with a 600 nm-thick BYZ electrolyte on 10 nm pores, respectively, but it increased to 0.8 V for a 900 nm-thick BYZ electrolyte on 10 nm pores, indicating that increasing the film thickness and decreasing a surface pore size help to reduce the number of electrolyte pinholes and the gas leakage through the electrolyte. A maximum power density of 5.6 mW/cm{sup 2} at 250 °C was obtained from the fuel cell with 900 nm of BYZ electrolyte using methanol vapor as a fuel. - Highlights: • A low temperature ceramic fuel cell on nano-porous substrate was demonstrated. • A thin-film yttrium doped barium zirconate (BYZ) was deposited as an electrolyte. • An open circuit voltage (OCV) was measured to verify the BYZ film quality. • An OCV increased by increasing BYZ film thickness and decreasing pore size of anode. • The current–voltage performance was measured using vaporized methanol fuel at 250 °C.

  4. Zno Micro/Nanostructures Grown on Sapphire Substrates Using Low-Temperature Vapor-Trapped Thermal Chemical Vapor Deposition: Structural and Optical Properties

    Directory of Open Access Journals (Sweden)

    Po-Sheng Hu

    2017-12-01

    Full Text Available In this research, the Zn(C5H7O22·xH2O-based growth of ZnO micro/nanostructures in a low temperature, vapor-trapped chemical vapor deposition system was attempted to optimize structural and optical properties for potential biomedical applications. By trapping in-flow gas molecules and Zinc vapor inside a chamber tube by partially obstructing a chamber outlet, a high pressure condition can be achieved, and this experimental setup has the advantages of ease of synthesis, being a low temperature process, and cost effectiveness. Empirically, the growth process proceeded under a chamber condition of an atmospheric pressure of 730 torr, a controlled volume flow rate of input gas, N2/O2, of 500/500 Standard Cubic Centimeters per Minute (SCCM, and a designated oven temperature of 500 °C. Specifically, the dependence of structural and optical properties of the structures on growth duration and spatially dependent temperature were investigated utilizing scanning electron microscopy, X-ray diffraction (XRD, photoluminescence (PL, and ultraviolet-visible transmission spectroscopy. The experimental results indicate that the grown thin film observed with hexagonal structures and higher structural uniformity enables more prominent structural and optical signatures. XRD spectra present the dominant peaks along crystal planes of (002 and (101 as the main direction of crystallization. In addition, while the structures excited with laser wavelength of 325 nm emit a signature radiation around 380 nm, an ultraviolet lamp with a wavelength of 254 nm revealed distinctive photoluminescence peaks at 363.96 nm and 403.52 nm, elucidating different degrees of structural correlation as functions of growth duration and the spatial gradient of temperature. Transmittance spectra of the structures illustrate typical variation in the wavelength range of 200 nm to 400 nm, and its structural correlation is less significant when compared with PL.

  5. Offshore Substrate

    Data.gov (United States)

    California Natural Resource Agency — This shapefile displays the distribution of substrate types from Pt. Arena to Pt. Sal in central/northern California. Originally this data consisted of seven paper...

  6. Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd x Hg1- x Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

    Science.gov (United States)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretskii, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.

    2017-06-01

    In a temperature range of 9-200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on CdxHg1-xTe (x = 0.22-0.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product RSCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product RSCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate.

  7. Palladium clusters deposited on the heterogeneous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Kun, E-mail: cqdxwk@126.com [College of Power Engineering, Chongqing University, Chongqing 400044 (China); Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education of PRC, Chongqing 400044 (China); Liu, Juanfang, E-mail: juanfang@cqu.edu.cn [College of Power Engineering, Chongqing University, Chongqing 400044 (China); Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education of PRC, Chongqing 400044 (China); Chen, Qinghua, E-mail: qhchen@cqu.edu.cn [College of Power Engineering, Chongqing University, Chongqing 400044 (China); Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education of PRC, Chongqing 400044 (China)

    2016-07-15

    Graphical abstract: The site-exchange between the substrate and cluster atoms can result in the formation of the surface alloys and the reconstruction of the cluster structure before the collision system approaching the thermal equilibrium. The deposited cluster adjusted the atom arrangement as possibly as to match the substrate lattice arrangement from bottom to up. The structural reconstruction is accompanied by the system potential energy minimization. - Highlights: • The deposition process can divide explicitly into three stages: adsorption, collision, relaxation. • The local melt does not emerge inside the substrate during the deposition process. • Surface alloys are formed by the site-exchange between the cluster and substrate atoms. • The cluster reconstructs the atom arrangement following as the substrate lattice arrangement from bottom to up. • The structural reconstruction ability and scope depend on the cluster size and incident energy. - Abstract: To improve the performance of the Pd composite membrane prepared by the cold spraying technology, it is extremely essential to give insights into the deposition process of the cluster and the heterogeneous deposition of the big Pd cluster at the different incident velocities on the atomic level. The deposition behavior, morphologies, energetic and interfacial configuration were examined by the molecular dynamic simulation and characterized by the cluster flattening ratio, the substrate maximum local temperature, the atom-embedded layer number and the surface-alloy formation. According to the morphology evolution, three deposition stages and the corresponding structural and energy evolution were clearly identified. The cluster deformation and penetrating depth increased with the enhancement of the incident velocity, but the increase degree also depended on the substrate hardness. The interfacial interaction between the cluster and the substrate can be improved by the higher substrate local temperature

  8. Determination of DNA by solid substrate room temperature phosphorescence enhancing method based on the Morin.SiO2 luminescent nanoparticles-Pd system as a phosphorescence probe

    International Nuclear Information System (INIS)

    Liu Jiaming; Yang Tianlong; Gao Fei; Hu Lixiang; He Hangxia; Liu Qinying; Liu Zhenbo; Huang Xiaomei; Zhu Guohui

    2006-01-01

    Sodium carbonate (Na 2 SiO 3 ) as the precursor, was mixed with Morin organic dye to synthesize silicon dioxide luminescent nanoparticles containing Morin (Morin.SiO 2 ) by sol-gel method. The particle sizes of SiO 2 .nH 2 O and Morin.SiO 2 were both 50 nm, measured with TEM (transmission electron microscope). Morin.SiO 2 modified by HS-CH 2 COOH could be dissolved by water. In the HMTA (hexamethylenetetramine)-HCl buffer solution, Pd 2+ could coordinate with Morin in Morin.SiO 2 to form complex Pd 2+ -Morin.SiO 2 , which could emit phosphorescence on polyamide membrane. And DNA (deoxyribonucleic acid) could cause a sharp enhancement of the room temperature phosphorescence (RTP) intensity of complex Pd 2+ -Morin.SiO 2 . Thus a new method of solid substrate room temperature phosphorescence (SS-RTP) enhancing for the determination of DNA was established based on the Morin.SiO 2 luminescent nanoparticles-Pd system as a phosphorescence probe. The ΔIp is directly proportional to the content of DNA in the range of 4.00-1000.0 fg spot -1 (corresponding concentration: 0.010-2.50 ng ml -1 ). The regression equation of working curve was ΔIp = 21.13 + 0.2076m DNA (fg spot -1 ) (r = 0.9990) and the detection limit was 0.61 fg spot -1 (corresponding concentration: 1.5 pg ml -1 ). This method had a wide linear range, high sensitivity, convenience, rapidity and only a little sample was needed. Samples containing 0.10 and 25.0 ng ml -1 DNA were measured repeatedly for 11 times and RSDs were 3.2 and 4.1% (n = 11), respectively, which indicated that the method had a good repeatability. Disturbance of common ions, such as Mg 2+ , K + , and Ca 2+ , was small, and there was no disturbance in the presence of protein and RNA. This method has been applied to the determination of DNA in nectar successfully

  9. Thermal decomposition of expanded polystyrene in a pebble bed reactor to get higher liquid fraction yield at low temperatures

    International Nuclear Information System (INIS)

    Chauhan, R.S.; Gopinath, S.; Razdan, P.; Delattre, C.; Nirmala, G.S.; Natarajan, R.

    2008-01-01

    Expanded polystyrene is one of the polymers produced in large quantities due to its versatile application in different fields. This polymer is one of the most intractable components in municipal solid waste. Disposal of polymeric material by pyrolysis or catalytic cracking yields valuable hydrocarbon fuels or monomers. Literature reports different types of reactors and arrangements that have uniform temperatures during pyrolysis and catalytic cracking. The present study focuses on reducing the temperature to maximize the quantity of styrene monomer in the liquid product. A bench scale reactor has been developed to recover the styrene monomer and other valuable chemicals. Experiments were carried under partial oxidation and vacuum conditions in the temperature range of 300-500 deg. C. In the pyrolysis optimization studies, the best atmospheric condition was determined to be vacuum, the pyrolysis temperature should be 500 deg. C, yield of liquid product obtained was 91.7% and yield of styrene obtained was 85.5%. In the characterization studies, distillation and IR spectroscopy experiments were carried out. The remaining of the liquid product comprises of benzene, ethyl benzene, and styrene dimers and trimers

  10. Thermodynamic Studies at Higher Temperatures of the Phase Relationships of Substoichiometric Plutonium and Uranium/Plutonium Oxides

    DEFF Research Database (Denmark)

    Sørensen, Ole Toft

    1976-01-01

    Partial molar thermodynamic quantities for oxygen in non-stoichiometric Pu and U/Pu oxides were determined by thermogravimetric measurements in CO/CO2 mixtures in the temperature range 900-1450°C. A detailed analysis of the thermodynamic data obtained, as well as data previously published...

  11. On the behavior of water at subfreezing temperatures in a protein crystal: evidence of higher mobility than in bulk water.

    Science.gov (United States)

    Wang, Dongqi; Böckmann, Anja; Dolenc, Jožica; Meier, Beat H; van Gunsteren, Wilfred F

    2013-10-03

    NMR experiments have shown that water molecules in the crystal of the protein Crh are still mobile at temperatures well below 273 K. In order to investigate this water anomaly, a molecular dynamics (MD) simulation study of crystalline Crh was carried out to determine the mobility of water in this crystal. The simulations were carried out at three temperatures, 150, 200, and 291 K. Simulations of bulk water at these temperatures were also done to obtain the properties of the simple point charge (SPC) water model used at these temperatures and to allow a comparison of the properties of water in the Crh crystal with those of bulk water at the same temperatures. According to the simulations, water is immobilized at 150 K both in crystal and in bulk water. As expected, at 291 K it diffuses and rotates more slowly in the protein crystal than in bulk water. However, at 200 K, the translational and rotational mobility of the water molecules is larger in the crystal than in bulk water. The enhancement of water mobility in the crystal at 200 K was further investigated by MD simulations in which the backbone or all protein atoms were positionally restrained, and in which additionally the electrostatic protein-water interactions were removed. Of these changes in the environment of the water molecules, rigidifying the protein backbones slightly enhanced water diffusion, while it slowed down rotation. In contrast, removal of electrostatic protein-water interactions did not change water diffusion but enhanced rotational motion significantly. Further investigations are required to delineate particular features of the protein crystal that induce the anomalous behavior of water at 200 K.

  12. Substrate temperature study in the crystallinity of BaTiO{sub 3} thin films; Estudio de la temperatura de crecimiento sobre la cristalinidad en peliculas delgadas de BaTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Marquez-Herrera, Alfredo [Coordinacion Academica Region Altiplano (COARA), Universidad Autonoma de San Luis Potosi, San Luis Potosi (Mexico)]. E-mail: amarquez@mixteco.utm.mx; Hernandez-Rodriguez, Eric Noe; Zapata-Torres, Martin Guadalupe [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Instituto Politecnico Nacional (Mexico)]. E-mails: noehmx@hotmail.com; mzapatat@ipn.mx; Cruz-Jauregui, Maria de la Paz [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico (Mexico)]. E-mail: mcruz@cnyn.unam.mx; Melendez-Lira, Miguel angel [Centro de Investigacion y de Estudios Avanzados, Instituto Politecnico Nacional (Mexico)]. E-mail: mlira@fis.cinvestav.mx

    2013-07-15

    Ferroelectric thin films of BaTiO{sub 3} (BTO) were grown on quartz and nichrome substrates using a BaTiO{sub 3} target by RF-Sputtering technique. It was studied the effect of the substrate temperature in the crystallization of the material. These samples were compared with films deposited at room temperature and heat treated out of the growth Chamber. Their crystallinity were studied by X-ray diffraction. Additionally, the optical characterizations were carried out by UV-Vis spectrophotometer. The growth of thin films with substrate temperature allows the obtaining of crystalline materials at temperatures below those reported by other authors. [Spanish] Peliculas delgadas Ferroelectricas de BaTiO{sub 3} (BTO) se depositaron a partir de un blanco de BaTiO{sub 3} mediante la tecnica de RF-Sputtering (erosion catodica por radio frecuencia) sobre substratos de nicromel y cuarzo. Se estudio el efecto de la temperatura de sustrato in-situ en la cristalinidad del material durante su deposito. Estas muestras fueron comparadas con peliculas depositadas a temperatura ambiente y tratadas termicamente posterior al deposito fuera de la camara de crecimiento. El estudio de la cristalinidad fue realizado mediante la tecnica de difraccion de rayos-X. Adicionalmente, se llevaron a cabo caracterizaciones opticas mediante un espectrofotometro UV-Vis. El crecimiento de peliculas delgadas con temperatura de sustrato permite la obtencion de materiales cristalinos a temperaturas por debajo de las reportadas por otros autores.

  13. Preparation of SrCoOx thin films on LaAlO3 substrate and their reversible redox process at moderate temperatures

    Science.gov (United States)

    Hao, L.; Zhang, Z. F.; Xie, X. N.; Wang, H. R.; Yu, Q. X.; Zhu, H.

    2015-10-01

    Using magnetron sputtering and annealing techniques, we have prepared SrCoOx films on LaAlO3 and SrTiO3 substrates. Distinctly different structures of the films have been found on the two substrates. It is suggested that positive lattice mismatch between film and substrate promotes SrCoO2.5 films with an orthorhombic structure grown on SrTiO3 substrate, whereas negative lattice mismatch from LaAlO3 substrate is in favor of increasing the valence state of Co and thus the growth of oxygen-rich SrCoOx with a tetragonal structure. In addition to the structural characterization, magnetic and electrical measurements confirm that the oxygen content x is between 2.75 and 2.88 for the latter. Reversibility of the topotactic phase transformation between SrCoO2.5 and the oxygen-rich SrCoOx films has also been studied by changing the oxygen pressure during annealing process. Even in the presence of a negative lattice mismatch, the results reveal that the tetragonal SrCoOx films on LaAlO3 substrate retain high oxygen mobility identified before in cubic SrCoOx films.

  14. A protocol for storage and long-distance shipment of Mediterranean fruit fly (Diptera: Tephritidae) eggs. II. Assessment of the optimal temperature and the substrate for male-only production

    International Nuclear Information System (INIS)

    Maman, E.; Caceres, C.

    2007-01-01

    The present study has been conducted to assess the effect and interaction of various storage substrates and conditions on eggs of the Mediterranean fruit fly (medfly) Ceratitis capitata (Wiedemann). Tests were carried out with the genetic sexing strain VIENNA 8/D53, a strain that carries a temperature sensitive lethal (tsl) mutation that allows the selective killing of female zygotes. This study identifies strategies to enhance the storage and transport conditions through assessment of effect on egg, pupal and adult survival in order to facilitate the establishment of satellite mass rearing facilities for the production of male medflies. Eggs were immersed in two different substrates and stored at different temperatures and for different time periods. Findings from this study suggest that egg storage periods, and to some extent, the storage substrates have significant effects on pupal and adult survival. For 72-h storage periods, the eggs preserved in agar solution at 10 deg. C produced the most pupae. There was an inverse relationship between the concentration of dissolved oxygen in the substrate during storage and the quality and survival of the stored/transported eggs. Apparently low levels of dissolved oxygen reduce metabolic rates, allowing the storage period to be prolonged. (author) [es

  15. Top-Emission Organic Light Emitting Diode Fabrication Using High Dissipation Graphite Substrate

    Directory of Open Access Journals (Sweden)

    Yu-Sheng Tsai

    2014-01-01

    Full Text Available This study uses a synthetic graphite fiber as the heat dissipation substrate for top-emission organic light emitting diode (TEOLED to reduce the impact from joule heat. UV glue (YCD91 was spin coated onto the substrate as the insulation layer. The TEOLED structure is (glass; copper; graphite substrate/YCD91 glue/Al/Au/EHI608/TAPC/Alq3/LiF/Al/Ag. The proposed graphite fiber substrate presents better luminous performance compared with glass and copper substrate devices with luminance of 3055 cd/m2 and current efficiency of 6.11 cd/A at 50 mA/cm2. When lighting period of different substrates TEOLED, the substrate case back temperature was observed using different lighting periods. A glass substrate element operating from 5 to 25 seconds at 3000 cd/m2 luminance produced a temperature rate of 1.207°C/sec. Under 4000 cd/m2 luminance the copper and graphite substrate temperature rates were 0.125°C/sec and 0.088°C/sec. Graphite component lifetime was determined to be 1.875 times higher than the glass components and 1.125 times higher than that of copper.

  16. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

    DEFF Research Database (Denmark)

    Zubov, F.; Semenova, Elizaveta; Kulkova, Irina

    2017-01-01

    We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a b......We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution...

  17. Cooperation between catalytic and DNA binding domains enhances thermostability and supports DNA synthesis at higher temperatures by thermostable DNA polymerases.

    Science.gov (United States)

    Pavlov, Andrey R; Pavlova, Nadejda V; Kozyavkin, Sergei A; Slesarev, Alexei I

    2012-03-13

    We have previously introduced a general kinetic approach for comparative study of processivity, thermostability, and resistance to inhibitors of DNA polymerases [Pavlov, A. R., et al. (2002) Proc. Natl. Acad. Sci. U.S.A.99, 13510-13515]. The proposed method was successfully applied to characterize hybrid DNA polymerases created by fusing catalytic DNA polymerase domains with various sequence-nonspecific DNA binding domains. Here we use the developed kinetic analysis to assess basic parameters of DNA elongation by DNA polymerases and to further study the interdomain interactions in both previously constructed and new chimeric DNA polymerases. We show that connecting helix-hairpin-helix (HhH) domains to catalytic polymerase domains can increase thermostability, not only of DNA polymerases from extremely thermophilic species but also of the enzyme from a faculatative thermophilic bacterium Bacillus stearothermophilus. We also demonstrate that addition of Topo V HhH domains extends efficient DNA synthesis by chimerical polymerases up to 105 °C by maintaining processivity of DNA synthesis at high temperatures. We found that reversible high-temperature structural transitions in DNA polymerases decrease the rates of binding of these enzymes to the templates. Furthermore, activation energies and pre-exponential factors of the Arrhenius equation suggest that the mechanism of electrostatic enhancement of diffusion-controlled association plays a minor role in binding of templates to DNA polymerases.

  18. An investigation of the insertion of the cations H{sup +}, Na{sup +}, K{sup +} on the electrochromic properties of the thermally evaporated WO{sub 3} thin films grown at different substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Patel, K.J. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Panchal, C.J., E-mail: cjpanchal_msu@yahoo.com [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Desai, M.S. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Mehta, P.K. [Physics Department, Faculty of Science, M.S. University of Baroda, Vadodara 390002, Gujarat (India)

    2010-11-01

    The phenomenon of electrochromism in tungsten trioxide (WO{sub 3}) thin films has recently attained considerable interest due to their enormous applications in inorganic thin film electrochromic devices. We have investigated the compositional, optical, and electrochromic properties of the WO{sub 3} thin films grown at different substrate temperatures by the thermal evaporation of WO{sub 3} powder. The thin films were characterized using X-ray diffraction (XRD), X-ray photo-emission spectroscopy (XPS), and electrochemical techniques. The XPS analysis suggested that the oxygen to tungsten (O/W) ratio decreases, i.e., the oxygen deficiency increases, on increasing the substrate temperature up to 500 deg. C. The electrochemical analysis provided a comparative study of the coloration efficiency (CE) of the WO{sub 3} thin films intercalated with three different ions viz. H{sup +}, Na{sup +}, and K{sup +}. The effect of the variation of the substrate temperature on the CE and the switching time have also been investigated for the WO{sub 3} thin films intercalated with H{sup +} ions; the thin films deposited at RT and intercalated with H{sup +} ions are found to possess adequate electrochromic properties viz. CE and switching time from device point of view.

  19. Higher Storage Temperature Causes Greater Salmonella enterica Serovar Typhimurium Internal Penetration of Artificially Contaminated, Commercially Available, Washed Free Range Eggs.

    Science.gov (United States)

    Whiley, Alice; Fallowfield, Howard; Ross, Kirstin; McEvoy, Vanessa; Whiley, Harriet

    2016-07-01

    Foodborne salmonellosis is a major public health concern, with contaminated eggs identified as a significant source of infection. In Australia, the most prevalent cause of salmonellosis from eggs is Salmonella enterica subsp. enterica serovar Typhimurium. This study explored the effect of temperature after 1, 7, 14, 21, and 28 days of storage on commercially available washed free range eggs, artificially contaminated with Salmonella Typhimurium on the external surface. At each time point, the external surface of the egg, the crushed eggshell, and the internal egg yolk and albumen were analyzed for Salmonella. After 28 days of storage, 25% of eggs stored at 4°C, 50% of eggs stored at 14°C, and 100% of eggs stored at 23 and 35°C were internally contaminated with Salmonella. After 1 day of storage, more than 50% of all eggs had Salmonella present in the crushed shell after the external surface had been disinfected with ethanol. This is the first study to demonstrate that refrigeration reduced the potential for Salmonella Typhimurium to penetrate the eggshell membrane and internally contaminate table eggs commercially available in Australia. It also suggests that the processes of cracking eggs may be a source of cross-contamination within the kitchen.

  20. Effect of substrate temperature in the structural, optical and ferroelectric properties of thin films of BaTiO{sub 3} deposited by RF sputtering; Efecto de la temperatura de substrato en las propiedades estructurales, opticas y ferroelectricas de peliculas delgadas de BaTiO{sub 3} depositadas por RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marquez H, A. [Universidad Autonoma de San Luis Potosi, Coordinacion Academica Region Altiplano, Carretera a Cedral Km. 5 -600, Matehuala, 78800 San Luis Potosi (Mexico); Hernandez R, E.; Zapata T, M. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Calz. Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Calzadilla A, O. [Universidad de la Habana, Facultad de Fisica-IMRE, San Lazaro y L. Municipio Plaza de la Revolucion, La Habana (Cuba); Melendez L, M. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07000 Mexico D. F. (Mexico)

    2012-07-01

    Thin films of Barium Titanate (BaTiO{sub 3}) were grown on nichrome and quartz substrates, using a BaTiO{sub 3} target, by RF sputtering technique. We varied the substrate temperature in order to study its effect on the structural, optical and ferroelectric properties of the samples. The results of the X-ray diffraction showed tetragonal structure with increases of the crystallinity as increases the substrate temperature. Furthermore, it observed by ultraviolet-visible spectroscopy that the band gap decreased as the substrate temperature increases showing abrupt sharp decrease at 494.8{sup o} C. The ferroelectric properties of the films showed a dependence with substrate temperature, the best ferroelectric answer was obtained at 494.8{sup o} C. (Author)

  1. Growth of wurtzite CdTe nanowires on fluorine-doped tin oxide glass substrates and room-temperature bandgap parameter determination

    Science.gov (United States)

    Choi, Seon Bin; Song, Man Suk; Kim, Yong

    2018-04-01

    The growth of CdTe nanowires, catalyzed by Sn, was achieved on fluorine-doped tin oxide glass by physical vapor transport. CdTe nanowires grew along the 〈0001〉 direction, with a very rare and phase-pure wurtzite structure, at 290 °C. CdTe nanowires grew under Te-limited conditions by forming SnTe nanostructures in the catalysts and the wurtzite structure was energetically favored. By polarization-dependent and power-dependent micro-photoluminescence measurements of individual nanowires, heavy and light hole-related transitions could be differentiated, and the fundamental bandgap of wurtzite CdTe at room temperature was determined to be 1.562 eV, which was 52 meV higher than that of zinc-blende CdTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands was estimated to be 43 meV.

  2. Pyrolysis of Lantana camara and Mimosa pigra: Influences of temperature, other process parameters and incondensable gas evolution on char yield and higher heating value.

    Science.gov (United States)

    Mundike, Jhonnah; Collard, François-Xavier; Görgens, Johann F

    2017-11-01

    Pyrolysis of invasive non-indigenous plants, Lantana camara (LC) and Mimosa pigra (MP) was conducted at milligram-scale for optimisation of temperature, heating rate and hold time on char yield and higher heating value (HHV). The impact of scaling-up to gram-scale was also studied, with chromatography used to correlate gas composition with HHV evolution. Statistically significant effects of temperature on char yield and HHV were obtained, while heating rate and hold time effects were insignificant. Milligram-scale maximised HHVs were 30.03MJkg -1 (525°C) and 31.01MJkg -1 (580°C) for LC and MP, respectively. Higher char yields and HHVs for MP were attributed to increased lignin content. Scaling-up promoted secondary char formation thereby increasing HHVs, 30.82MJkg -1 for LC and 31.61MJkg -1 for MP. Incondensable gas analysis showed that temperature increase beyond preferred values caused dehydrogenation that decreased HHV. Similarly, CO evolution profile explained differences in optimal HHV temperatures. Copyright © 2017 Elsevier Ltd. All rights reserved.

  3. Structural, optical and electrical characteristics of ITO thin films deposited by sputtering on different polyester substrates

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.

    2008-01-01

    Indium tin oxide (ITO) thin films were deposited by sputtering at room temperature on glass and different polyester substrates; namely polyarylate (PA), polycarbonate (PC) and polyethylene terephtalate (PET). The influence of the substrate on the structural, optical and electrical characteristics of the ITO layers was investigated. The sputtered films exhibited crystallization in the (2 2 2) orientation, with higher mean crystallite size and lower structural distortion onto PET than onto PA, PC or glass substrates. ITO films deposited onto PET showed also higher band gap energy, higher carrier concentration and lower resistivity than the ITO layers onto the other tested substrates. These optical and electrical characteristics have been related to the structural distortion that was found dependent on the specific polyester substrate

  4. Increased vapor pressure deficit due to higher temperature leads to greater transpiration and faster mortality during drought for tree seedlings common to the forest-grassland ecotone.

    Science.gov (United States)

    Will, Rodney E; Wilson, Stuart M; Zou, Chris B; Hennessey, Thomas C

    2013-10-01

    Tree species growing along the forest-grassland ecotone are near the moisture limit of their range. Small increases in temperature can increase vapor pressure deficit (VPD) which may increase tree water use and potentially hasten mortality during severe drought. We tested a 40% increase in VPD due to an increase in growing temperature from 30 to 33°C (constant dewpoint 21°C) on seedlings of 10 tree species common to the forest-grassland ecotone in the southern Great Plains, USA. Measurement at 33 vs 30°C during reciprocal leaf gas exchange measurements, that is, measurement of all seedlings at both growing temperatures, increased transpiration for seedlings grown at 30°C by 40% and 20% for seedlings grown at 33°C. Higher initial transpiration of seedlings in the 33°C growing temperature treatment resulted in more negative xylem water potentials and fewer days until transpiration decreased after watering was withheld. The seedlings grown at 33°C died 13% (average 2 d) sooner than seedlings grown at 30°C during terminal drought. If temperature and severity of droughts increase in the future, the forest-grassland ecotone could shift because low seedling survival rate may not sufficiently support forest regeneration and migration. © 2013 The Authors. New Phytologist © 2013 New Phytologist Trust.

  5. Determination of trace alkaline phosphatase by affinity adsorption solid substrate room temperature phosphorimetry based on wheat germ agglutinin labeled with 8-quinolineboronic acid phosphorescent molecular switch and prediction of diseases

    Science.gov (United States)

    Liu, Jia-Ming; Gao, Hui; Li, Fei-Ming; Shi, Xiu-Mei; Lin, Chang-Qing; Lin, Li-Ping; Wang, Xin-Xing; Li, Zhi-Ming

    2010-09-01

    The 8-quinolineboronic acid phosphorescent molecular switch (abbreviated as PMS-8-QBA. Thereinto, 8-QBA is 8-quinolineboronic acid, and PMS is phosphorescent molecular switch) was found for the first time. PMS-8-QBA, which was in the "off" state, could only emit weak room temperature phosphorescence (RTP) on the acetyl cellulose membrane (ACM). However, PMS-8-QBA turned "on" automatically for its changed structure, causing that the RTP of 8-QBA in the system increased, after PMS-8-QBA-WGA (WGA is wheat germ agglutinin) was formed by reaction between -OH of PMS-8-QBA and -COOH of WGA. More interesting is that the -NH 2 of PMS-8-QBA-WGA could react with the -COOH of alkaline phosphatase (AP) to form the affinity adsorption (AA) product WGA-AP-WGA-8-QBA-PMS (containing -NH-CO- bond), which caused RTP of the system to greatly increase. Thus, affinity adsorption solid substrate room temperature phosphorimetry using PMS-8-QBA as labelling reagent (PMS-8-QBA-AA-SSRTP) for the determination of trace AP was established. The method had many advantages, such as high sensitivity (the detection limit (LD) was 2.5 zg spot -1. For sample volume of 0.40 μl spot -1, corresponding concentration was 6.2 × 10 -18 g ml -1), good selectivity (the allowed concentration of coexisting material was higher, when the relative error was ±5%), high accuracy (applied to detection of AP content in serum samples, the result was coincided with those obtained by enzyme-linked immunoassay), which was suitable for the detection of trace AP content in serum samples and the forecast of human diseases. Meanwhile, the mechanism of PMS-8-QBA-AASSRTP was discussed. The new field of analytical application and clinic diagnosis technique of molecule switch are exploited, based on the phosphorescence characteristic of PMS-8-QBA, the AA reaction between WGA and AP, as well as the relation between AP content and human diseases. The research results promote the development and interpenetrate among molecule

  6. Influence of annealing temperature on the nanostructure TiO2-SnO2 prepared by electron gun method on the glass substrate and the aluminum/glass

    Directory of Open Access Journals (Sweden)

    N Beigmohammadi

    2013-09-01

    Full Text Available  TiO2-SnO2 thin films were coated on glass and Al / glass substrates by electron gun method. In coating process, the vacuum was 1.5×10-5 torr. Then, films were annealed at 450, 500 and 550 ˚ C. The crystallographic structure and film morphology were investigated by means of XRD and SEM. The electrical (I-V and optical properties were studied by the two point props system and UV/Vis/NIR spectrophotometer. The results showed the films under 550 ˚ C were crystalline. The thickness and grain size were 350 and 50 nm respectively. The electrical conductivity in the sample with Al / glass substrate under 550 ˚ C was better than the other samples. When temperature increased, the energy gap decreased from 4.05 to 4.03 eV for direct cases.

  7. Temperature and thickness dependence of the grain boundary scattering in the Ni–Si silicide films formed on silicon substrate at 500 °C by RTA

    International Nuclear Information System (INIS)

    Utlu, G.; Artunç, N.; Selvi, S.

    2012-01-01

    Highlights: ► It is a systematic study of various thicknesses (18–290 nm) of Ni–Si silicide films. ► The temperature-dependent resistivity measurements of the films are studied. ► Resistivity variation of the films with temperature exhibits an unusual behavior. ► Parallel-resistor formula is reduced to Matthiessen's rule in this study. ► Reflection coefficients have been found in a wide temperature and thickness range. - Abstract: The temperature-dependent resistivity measurements of Ni–Si silicide films with 18–290 nm thicknesses are studied as a function of temperature and film thickness over the temperature range of 100–900 K. The most striking behavior is that the variation of the resistivity of the films with temperature exhibits an unusual behavior. The total resistivity of the Ni–Si silicide films in this work increases linearly with temperature up to a T m temperature, thereafter decreases rapidly and finally reaches zero. Our analyses have shown that in the temperature range of 100 to T m (K), parallel-resistor formula reduces to Matthiessen's rule and θ D Debye temperature becomes independent of the temperature for the given thickness range, whereas at high temperatures (above T m ) it increases slightly with thickness. θ D Debye temperature have been found to be about 400–430 K for the films. We have also shown that for temperature range of 100 to T m (K), linear variation of the resistivity of the silicide films with temperature has been caused from both grain-boundary scattering and electron–phonon scattering. That is why, resistivity data could have been analyzed in terms of the Mayadas–Schatzkes (M–S) model successfully. Theoretical and experimental values of reflection coefficients have been calculated by analyzing resistivity data using M–S model. According to our analysis, R increases with decreasing film thickness for a given temperature, while it is almost constant for the thickness range of 200–67 nm and 47

  8. Temperature measurement in low pressure plasmas. Temperaturmessungen im Niederdruckplasma

    Energy Technology Data Exchange (ETDEWEB)

    Rosenbauer, K.A.; Wilting, H.; Schramm, G. (Duesseldorf Univ. (Germany, F.R.). Abt. fuer Histologie und Embryologie)

    1989-11-01

    The present work discusses the influence of various parameters on the substrate temperature in a low pressure plasma. The measurement method chosen utilized Signotherm (Merck) temperature sensors embedded in silicon between two glass substrates. All measurements were made in a 200 G Plasma Processor from Technics Plasma GmbH. The substrate temperature is dependent on the process time, the RF power, the process gas and the position in the chamber. The substrate temperature increases with increasing process time and increasing power. Due to the location of the microwave port from the magnetron to the chamber, the substrate temperature is highest in the center of the chamber. Measurements performed in an air plasma yielded higher results than in an oxygen plasma. (orig.).

  9. Flexible and foldable paper-substrate thermoelectric generator (teg)

    KAUST Repository

    Rojas, Jhonathan Prieto

    2017-08-24

    Flexible and foldable paper-substrate thermoelectric generators (TEGs) and methods for making the paper-substrate TEGs are disclosed. A method includes depositing a plurality of thermocouples in series on a paper substrate to create a paper-substrate TEG, wherein the plurality of thermocouples is deposited between two contact points of the paper-substrate TEG. The method may also include setting the power density and maximum achievable temperature gradient of the paper-substrate TEG by folding the paper-substrate TEG. A paper-substrate TEG apparatus may include a paper substrate and a plurality of thermocouples deposited in series on the paper substrate between two contact points of the paper-substrate TEG, wherein the power density and maximum achievable temperature gradient of the paper-substrate TEG is set by folding the paper-substrate TEG.

  10. A Pilot Study Examining Physical and Social Warmth: Higher (Non-Febrile) Oral Temperature Is Associated with Greater Feelings of Social Connection.

    Science.gov (United States)

    Inagaki, Tristen K; Irwin, Michael R; Moieni, Mona; Jevtic, Ivana; Eisenberger, Naomi I

    2016-01-01

    An emerging literature suggests that experiences of physical warmth contribute to social warmth-the experience of feeling connected to others. Thus, thermoregulatory systems, which help maintain our relatively warm internal body temperatures, may also support feelings of social connection. However, the association between internal body temperature and feelings of connection has not been examined. Furthermore, the origins of the link between physical and social warmth, via learning during early experiences with a caregiver or via innate, co-evolved mechanisms, remain unclear. The current study examined the relationship between oral temperature and feelings of social connection as well as whether early caregiver experiences moderated this relationship. Extending the existing literature, higher oral temperature readings were associated with greater feelings of social connection. Moreover, early caregiver experiences did not moderate this association, suggesting that the physical-social warmth overlap may not be altered by early social experience. Results provide additional support for the link between experiences of physical warmth and social warmth and add to existing theories that highlight social connection as a basic need on its own.

  11. Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

    Science.gov (United States)

    Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

    2016-05-01

    We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

  12. Germinação de sementes de jenipapo: temperatura, substrato e morfologia do desenvolvimento pós-seminal Seed germination of Genipa americana l. - rubiaceae: temperature, substrate and post-seminal development

    Directory of Open Access Journals (Sweden)

    ANTÔNIO CARLOS SILVA DE ANDRADE

    2000-03-01

    Full Text Available O presente trabalho teve como objetivos definir o tipo de substrato e a temperatura mais adequados à germinação de sementes de jenipapo (Genipa americana L., conhecer a morfologia das sementes e seu desenvolvimento pós-seminal, caracterizando as plântulas normais, o tipo de germinação e os padrões de anormalidade. Para tanto, realizou-se um experimento colocando-se as sementes sobre os seguintes substratos: papel, vermiculita e solo, nas temperaturas constantes de 20°C, 25°C, 30°C, e 35°C e alternada de 20°C-30°C. O delineamento estatístico empregado foi o inteiramente casualizado (5 x 3, com quatro repetições de 50 sementes. Foram analisados os parâmetros germinação normal (% e velocidade de germinação. Os melhores resultados foram obtidos nas temperaturas constantes de 25°C, 30°C e 35°C, e nos substratos vermiculita e solo.This study aimed to define the best substrate and temperature for germination of genipap (Genipa americana L. - Rubiaceae seeds, and to describe the morphology of its seeds, post-seminal development, normal and abnormal seedlings. The experiment was designed according to a 5 x 3 factorial with constant temperatures of 20°C, 25°C, 30°C and 35°C and alternated 20°C-30°C in filter paper, vermiculite and soil substrates. The following parameters were analyzed: normal percentage germination and speed of germination. The 25°C, 30°C and 35°C temperatures and vermiculite and soil substrates were the best conditions for seed germination.

  13. Effect of substrate temperature on the optical, structural and morphological properties of In{sub 2}Se{sub 3} thin films grown by a two-step process

    Energy Technology Data Exchange (ETDEWEB)

    Clavijo, J; Gordillo, G [Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia); Romero, E, E-mail: jiclavijop@unal.edu.c, E-mail: erromerom@unal.edu.c, E-mail: ggordillog@unal.edu.c

    2009-05-01

    Polycrystalline gamma - In{sub 2}Se{sub 3} thin films with adequate properties to use them as buffer layer in solar cells, were grown on corning glass substrates using a novel procedure which includes the formation of the alpha- In{sub 2}Se{sub 3} phase in a first step followed by thermal annealing in Se ambient to activate the formation of the gamma- In{sub 2}Se{sub 3} phase. X-ray diffraction (XRD) measurements revealed that the substrate temperature strongly affects the phase in which the indium selenide films grow; at substrate temperatures of around 300{sup 0}C the indium selenide grow in the alpha-In{sub 2}Se{sub 3} phase, whereas the samples deposited at temperatures between 300 and 550{sup 0}C grow with a mixture of the alpha-In{sub 2}Se{sub 3} and gamma-In{sub 2}Se{sub 3} phases. The alpha-In{sub 2}Se{sub 3} samples change into the gamma-In{sub 2}Se{sub 3} phase when subjected to heat treatment around 550{sup 0}C in Se ambient. Spectrophotometric measurements also revealed that the phase in which the indium selenide films grow, significantly affects the optical gap Eg. Eg values of 1.47 eV and 2.11 eV were determined for the alpha-In{sub 2}Se{sub 3} and gamma-In{sub 2}Se{sub 3} films respectively, indicating that this gamma-In{sub 2}Se{sub 3} compound has better properties to perform as buffer layer in thin film solar cells. The effect of substrate temperature on the structural, optical and morphological properties was investigated using XRD, spectral transmittance and atomic force microscope (AFM) measurements. Theoretical simulation of the XRD pattern carried out with the help of the PowderCell package, allowed us to identify the phases associated to the X-Ray reflections, with a good degree of confidence.

  14. Effect of substrate properties and thermal annealing on the resistivity of molybdenum thin films

    International Nuclear Information System (INIS)

    Schmid, U.; Seidel, H.

    2005-01-01

    In this study, the influence of substrate properties (e.g. roughness characteristics and chemical composition) on the electrical resistivity of evaporated molybdenum thin films is investigated as a function of varying parameters, such as film thickness (25-115 nm) and post-deposition annealing with temperatures up to T PDA = 900 deg. C. A thermally oxidized silicon wafer with very low surface roughness was used as one substrate type. In contrast, a low temperature co-fired ceramics substrate with a glass encapsulant printed in thick film technology is the representative for rough surface morphology. The electrical resistivity follows the prediction of the size effect up to T PDA = 600 deg. C independent of substrate nature. On the silicon-based substrate, the thickness-independent portion of the film resistivity ρ g in the 'as deposited' state is about 29 times higher than the corresponding bulk value for a mono-crystalline sample. Thin films of this refractory metal on the SiO 2 /Si substrate exhibit an average grain size of 4.9 nm and a negative temperature coefficient of resistivity (TCR). On the glass/ceramic-based substrate, however, ρ g is half the value as compared to that obtained on the SiO 2 /Si substrate and the TCR is positive

  15. A NEW NETWORK FOR HIGHER-TEMPERATURE GAS-PHASE CHEMISTRY. I. A PRELIMINARY STUDY OF ACCRETION DISKS IN ACTIVE GALACTIC NUCLEI

    International Nuclear Information System (INIS)

    Harada, Nanase; Herbst, Eric; Wakelam, Valentine

    2010-01-01

    We present a new interstellar chemical gas-phase reaction network for time-dependent kinetics that can be used for modeling high-temperature sources up to ∼800 K. This network contains an extended set of reactions based on the Ohio State University (OSU) gas-phase chemical network. The additional reactions include processes with significant activation energies, reverse reactions, proton exchange reactions, charge exchange reactions, and collisional dissociation. Rate coefficients already in the OSU network are modified for H 2 formation on grains, ion-neutral dipole reactions, and some radiative association reactions. The abundance of H 2 O is enhanced at high temperature by hydrogenation of atomic O. Much of the elemental oxygen is in the form of water at T ≥ 300 K, leading to effective carbon-rich conditions, which can efficiently produce carbon-chain species such as C 2 H 2 . At higher temperatures, HCN and NH 3 are also produced much more efficiently. We have applied the extended network to a simplified model of the accretion disk of an active galactic nucleus.

  16. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B.; Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Buriakov, A. M.; Bilyk, V. R.; Mishina, E. D. [Moscow Technological University “MIREA” (Russian Federation); Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Vasil’evskii, I. S. [National Research Nuclear University “MEPhI” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)

    2017-04-15

    The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

  17. Study of Ni2-Mn-Ga phase formation by magnetron sputtering film deposition at low temperature onto Si substrates and LaNiO3/Pb(Ti,Zr)O3 buffer

    International Nuclear Information System (INIS)

    Figueiras, F.; Rauwel, E.; Amaral, V. S.; Vyshatko, N.; Kholkin, A. L.; Soyer, C.; Remiens, D.; Shvartsman, V. V.; Borisov, P.; Kleemann, W.

    2010-01-01

    Film deposition of Ni 2 MnGa phaselike alloy by radio frequency (rf) magnetron sputtering was performed onto bare Si(100) substrates and LaNiO 3 /Pb(Ti,Zr)O 3 (LNO/PZT) ferroelectric buffer layer near room temperature. The prepared samples were characterized using conventional x-ray diffraction (XRD), superconducting quantum interference device, and electron dispersive x-ray spectroscopy from scanning electron microscope observations. The optimized films deposited under high rf power and low argon pressure present good surface quality and highly textured phase crystallization. The positioning distance between the substrate and the target-holder axis has some limited effect on the film's composition due to the specific diffusion behavior of each element in the sputtering plasma. Extended four pole high resolution XRD analysis allowed one to discriminate the intended Ni-Mn-Ga tetragonal martensitic phase induced by the (100) LNO/PZT oriented buffer. This low temperature process appears to be very promising, allowing separate control of the functional layer's properties, while trying to achieve high electromagnetoelastic coupling.

  18. Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD

    Science.gov (United States)

    Zhao, Yun; Guo, Yanzhao; Lin, Liangzhen; Zheng, Yuting; Hei, Lifu; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Li, Chengming

    2018-06-01

    Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of diamonds grown on the different seed substrates was compared. Fluorescence characteristics showed that the sectors of the HPHT seed substrates were obviously partitioned. Raman and absorption spectra showed that the CVD seed substrate produced higher-quality crystals with fewer nitrogen impurities. X-ray topography showed that the HPHT seed substrate had obvious growth sector boundaries, inclusions, dislocations, and stacking faults. The polarization characteristics of HPHT seed substrate were obvious, and the stress distribution was not uniform. When etching HPHT and CVD seed substrates using the same parameters, the etching morphology and extent of different growth sectors of the two substrates differed. Although extended defects were inevitably formed at the interface and propagated in the CVD layer, the dislocation density of a 1 mm-thick CVD layer grown on a CVD seed substrate was only half that of a 1 mm-thick CVD layer grown on an HPHT seed substrate. Therefore, the use of CVD seed substrate enabled the growth of a relatively higher-quality CVD single-crystal diamond.

  19. Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

    NARCIS (Netherlands)

    Verkerk, A.D.; de Jong, M.M.; Rath, J.K.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

    2009-01-01

    In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by

  20. A comparative analysis of property of lychee polyphenoloxidase using endogenous and exogenous substrates.

    Science.gov (United States)

    Sun, Jian; Shi, John; Zhao, Mouming; Xue, Sophia Jun; Ren, Jiaoyan; Jiang, Yueming

    2008-06-01

    Lychee polyphenoloxidase (PPO) was extracted and partially purified using ammonium sulphate precipitation and dialysis. The comparative analysis of PPO property was performed using its endogenous substrate (-)-epicatechin and exogenous substrate catechol. The pH optima for activity and activation temperature profiles of lychee PPO were very different when the enzyme reacted with endogenous and exogenous substrates. The addition of ethylenediaminetetraacetic acid disodium salt into the endogenous or exogenous substrate-enzyme system exhibited the same lowest inhibition of the PPO activity. However, l-cysteine was most effective in inhibiting enzymatic activity in the endogenous substrate-enzyme system while ascorbic acid was the best inhibitor in the exogenous substrate-enzyme system. Fe(2+) greatly accelerated the enzymatic reaction between endogenous substrate and PPO, but Cu(2+) exerted the same effect on the reaction between exogenous substrate and PPO. Based on the kinetic analysis, lychee PPO could strongly bind endogenous substrate but it possessed a higher catalytic efficiency to exogenous substrate. Copyright © 2007 Elsevier Ltd. All rights reserved.

  1. Superconducting materials at temperature higher than liquid nitrogen of the YBaCuO type. Materiaux supraconducteurs jusqu'a des temperatures superieures a celles de l'azote liquide, appartenant au systeme Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, R; Gegnier, P; Truchot, P

    1990-02-09

    The invention concerns new superconducting materials with the formula Zr{sub x} Hf{sub y} Ti{sub z} Y{sub 1-x-y-z} Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} where 0temperature higher than liquid nitrogen and can be used as wire, solid parts, thin or thick layers.

  2. Molecular dynamics investigation of nanoscale substrate topography and its interaction with liquids

    Science.gov (United States)

    Cordeiro Rodrigues, Jhonatam

    Nanotechnology has been presenting successful applications in several areas. However, experimentation with nanoscale materials is costly and limited in analysis capability. This research investigates the use of molecular dynamics (MD) simulations to model and study nanomaterials and manufacturing processes. MD simulations are employed to reduce cost, optimize design, increase productivity and allow for the investigation of material interactions not yet observable through experimentation. This work investigates the interaction of water with substrates at the nanoscale. The effect of temperature, droplet impingement velocities and size, as well as substrate material, are investigated at the nanoscale. Several substrate topography designs were modeled to reveal their influence on the wettability of the substrate. Nanoscale gold and silicon substrates are more hydrophilic at higher temperatures than at room temperature. The reduction in droplet diameter increases its wettability. High impingement velocity of droplets does not influence final wettability of substrates but induces higher diffusion rates of droplets in a heated environment. Droplets deposited over a gradient of surface exposure presents spontaneous movement. The Leidenfrost effect was investigated at the nanoscale. Droplets of 4 and 10nm in diameter presented behaviors pertinent to the Leidenfrost effect at 373K, significantly lower than at micro scale and of potential impact to the field. Topographical features were manipulated using superhydrophobic coating resulting in micro whiskers. Nanoimprint lithography (NIL) was used to manufacture substrate topographies at the nanoscale. Water droplets were deposited on the substrates and their wettability was measured using droplet contact angles. Lower surface area exposure resulted in higher contact angles. The experimental relationships between surface topography and substrate wettability were used to validate the insights gained from MD simulations for

  3. Effect of temperature and substrate on germination of Peltophorum dubium (Sprengel Taubert seeds = Efeito da temperatura e do substrato na germinação de sementes de Peltophorum dubium (Sprengel Taubert

    Directory of Open Access Journals (Sweden)

    Edna Ursulino Alves

    2011-01-01

    Full Text Available Peltophorum dubium (Spreng. Taub. is a species belonging to the family Fabaceae, and is known popularly as golden shower tree. Its wood has multiple uses in reforestation programs and as an ornamental tree, and is also considered an endangered species, requiring studies that assist in its preservation. The present work was conducted with the objective of determine the ideal substrate type and temperature to perform germination and vigor tests with P. dubium seeds. The experiment was carried out at the Seed Analysis Laboratory (Centro de Ciências Agrárias, Universidade Federal Paraíba, Areia, Paraíba, Brazil, in a completely randomized design. The treatments were distributed in a 4 x 6 factorial scheme; temperatures (constant temperatures of 25, 30 and 35°C; and alternate temperatures of 20- 30°C and substrate (paper towel, over blotting paper, in sand, in vermiculite, Bioplant® and Plantmax® on four replications of 25 seeds. The following parameters were analyzed: germination percentage, germination speed index, first germination count, length and dry mass of seedlings. The constant temperature of 30°C and 20-30°C alternate, and the substrates into sand and paper towel can be recommended for germination and vigor tests of P. dubium seeds. The temperature of 25°C should not be used in germination and vigortests of P. dubium seeds in any of the tested substrates.Peltophorum dubium (Spreng Taub. é uma espécie pertencente à família Fabaceae, conhecida popularmente como canafístula. A espécie pode serutilizada como ornamental e sua madeira tem múltiplos usos em programas de reflorestamento, é também considerada uma espécie em extinção, fazendo-se necessários estudos que auxiliem em sua preservação. Este trabalho teve como objetivo recomendar o substrato e a temperatura ideais para condução de testes de germinação e vigor para sementes desta espécie. O experimento foi realizado no Laboratório de Análise de Sementes

  4. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cariou, R., E-mail: romain.cariou@polytechnique.edu [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); III-V lab a joint laboratory between Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA-LETI, route de Nozay, 91460, Marcoussis, France. (France); Ruggeri, R. [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); CNR-IMM, strada VIII n°5, zona industriale, 95121, Catania (Italy); Tan, X.; Nassar, J.; Roca i Cabarrocas, P. [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); Mannino, Giovanni [CNR-IMM, strada VIII n°5, zona industriale, 95121, Catania (Italy)

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  5. Phonon scattering in graphene over substrate steps

    International Nuclear Information System (INIS)

    Sevinçli, H.; Brandbyge, M.

    2014-01-01

    We calculate the effect on phonon transport of substrate-induced bends in graphene. We consider bending induced by an abrupt kink in the substrate, and provide results for different step-heights and substrate interaction strengths. We find that individual substrate steps reduce thermal conductance in the range between 5% and 47%. We also consider the transmission across linear kinks formed by adsorption of atomic hydrogen at the bends and find that individual kinks suppress thermal conduction substantially, especially at high temperatures. Our analysis show that substrate irregularities can be detrimental for thermal conduction even for small step heights.

  6. Dielectric coatings on metal substrates

    International Nuclear Information System (INIS)

    Glaros, S.S.; Baker, P.; Milam, D.

    1976-01-01

    Large aperture, beryllium substrate-based mirrors have been used to focus high intensity pulsed laser beams. Finished surfaces have high reflectivity, low wavefront distortion, and high laser damage thresholds. This paper describes the development of a series of metallic coatings, surface finishing techniques, and dielectric overcoatings to meet specified performance requirements. Beryllium substrates were coated with copper, diamond-machined to within 5 micro-inches to final contour, nickel plated, and abrasively figured to final contour. Bond strengths for several bonding processes are presented. Dielectric overcoatings were deposited on finished multimetallic substrates to increase both reflectivity and the damage thresholds. Coatings were deposited using both high and low temperature processes which induce varying stresses in the finished coating substrate system. Data are presented to show the evolution of wavefront distortion, reflectivity, and damage thresholds throughout the many steps involved in fabrication

  7. Power electronics substrate for direct substrate cooling

    Science.gov (United States)

    Le, Khiet [Mission Viejo, CA; Ward, Terence G [Redondo Beach, CA; Mann, Brooks S [Redondo Beach, CA; Yankoski, Edward P [Corona, CA; Smith, Gregory S [Woodland Hills, CA

    2012-05-01

    Systems and apparatus are provided for power electronics substrates adapted for direct substrate cooling. A power electronics substrate comprises a first surface configured to have electrical circuitry disposed thereon, a second surface, and a plurality of physical features on the second surface. The physical features are configured to promote a turbulent boundary layer in a coolant impinged upon the second surface.

  8. Influence of calcination temperature on the morphology and energy storage properties of cobalt oxide nanostructures directly grown over carbon cloth substrates

    KAUST Repository

    Baby, Rakhi Raghavan

    2013-09-23

    Nanostructured and mesoporous cobalt oxide (Co3O4) nanowire in flower-like arrangements have been directly grown over flexible carbon cloth collectors using solvothermal synthesis for supercapacitor applications. Changes in the morphology and porosity of the nanowire assemblies have been induced by manipulating the calcination temperature (200–300 °C) of the one-dimensional (1-D) structures, resulting in significant impact on their surface area and pseudocapacitive properties. As the calcination temperature increases from 200 to 250 °C, the flower morphology gradually modifies to the point where the electrolyte could access almost all the nanowires over the entire sample volume, resulting in an increase in specific capacitance from 334 to 605 Fg−1, depending on the nanowire electrode morphology. The 300 °C calcination results in the breakdown of the mesoporous morphology and decreases the efficiency of electrolyte diffusion, resulting in a drop in pseudocapacitance after 300 °C. A peak energy density of 44 Wh kg−1 has been obtained at a power density of 20 kW kg−1 for the 250 °C calcined sample.

  9. Influence of calcination temperature on the morphology and energy storage properties of cobalt oxide nanostructures directly grown over carbon cloth substrates

    KAUST Repository

    Baby, Rakhi Raghavan; Chen, Wei; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    Nanostructured and mesoporous cobalt oxide (Co3O4) nanowire in flower-like arrangements have been directly grown over flexible carbon cloth collectors using solvothermal synthesis for supercapacitor applications. Changes in the morphology and porosity of the nanowire assemblies have been induced by manipulating the calcination temperature (200–300 °C) of the one-dimensional (1-D) structures, resulting in significant impact on their surface area and pseudocapacitive properties. As the calcination temperature increases from 200 to 250 °C, the flower morphology gradually modifies to the point where the electrolyte could access almost all the nanowires over the entire sample volume, resulting in an increase in specific capacitance from 334 to 605 Fg−1, depending on the nanowire electrode morphology. The 300 °C calcination results in the breakdown of the mesoporous morphology and decreases the efficiency of electrolyte diffusion, resulting in a drop in pseudocapacitance after 300 °C. A peak energy density of 44 Wh kg−1 has been obtained at a power density of 20 kW kg−1 for the 250 °C calcined sample.

  10. In-situ fabrication of MoSi{sub 2}/SiC–Mo{sub 2}C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo{sub 2}C barrier layer at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jun [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Gong, Qianming, E-mail: gongqianming@mail.tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Shao, Yang; Zhuang, Daming [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Liang, Ji [Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China)

    2014-07-01

    MoSi{sub 2}/SiC–Mo{sub 2}C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo{sub 2}C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi{sub 2}/SiC layer on the upper part of Mo{sub 2}C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), backscattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo{sub 2}C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi{sub 2}/SiC composite layer.

  11. In-situ fabrication of MoSi2/SiC–Mo2C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo2C barrier layer at high temperature

    International Nuclear Information System (INIS)

    Liu, Jun; Gong, Qianming; Shao, Yang; Zhuang, Daming; Liang, Ji

    2014-01-01

    MoSi 2 /SiC–Mo 2 C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo 2 C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi 2 /SiC layer on the upper part of Mo 2 C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), backscattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo 2 C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi 2 /SiC composite layer.

  12. Stability of perovskite solar cells on flexible substrates

    Science.gov (United States)

    Tam, Ho Won; Chen, Wei; Liu, Fangzhou; He, Yanling; Leung, Tik Lun; Wang, Yushu; Wong, Man Kwong; Djurišić, Aleksandra B.; Ng, Alan Man Ching; He, Zhubing; Chan, Wai Kin; Tang, Jinyao

    2018-02-01

    Perovskite solar cells are emerging photovoltaic technology with potential for low cost, high efficiency devices. Currently, flexible devices efficiencies over 15% have been achieved. Flexible devices are of significant interest for achieving very low production cost via roll-to-roll processing. However, the stability of perovskite devices remains a significant challenge. Unlike glass substrate which has negligible water vapor transmission rate (WVTR), polymeric flexible film substrates suffer from high moisture permeability. As PET and PEN flexible substrates exhibit higher water permeability then glass, transparent flexible backside encapsulation should be used to maximize light harvesting in perovskite layer while WVTR should be low enough. Wide band gap materials are transparent in the visible spectral range low temperature processable and can be a moisture barrier. For flexible substrates, approaches like atomic layer deposition (ALD) and low temperature solution processing could be used for metal oxide deposition. In this work, ALD SnO2, TiO2, Al2O3 and solution processed spin-on-glass was used as the barrier layer on the polymeric side of indium tin oxide (ITO) coated PEN substrates. The UV-Vis transmission spectra of the prepared substrates were investigated. Perovskite solar cells will be fabricated and stability of the devices were encapsulated with copolymer films on the top side and tested under standard ISOS-L-1 protocol and then compared to the commercial unmodified ITO/PET or ITO/PEN substrates. In addition, devices with copolymer films laminated on both sides successfully surviving more than 300 hours upon continuous AM1.5G illumination were demonstrated.

  13. Deposition characteristics of copper particles on roughened substrates through kinetic spraying

    International Nuclear Information System (INIS)

    Kumar, S.; Bae, Gyuyeol; Lee, Changhee

    2009-01-01

    In this paper, a systematic study of copper particle deposition behavior on polished and roughened surfaces (aluminum and copper) in kinetic spray process has been performed. The particle deformation behavior was simulated through finite element analysis (FEA) software ABAQUS explicit 6.7-2. The particle-substrate contact time, contact temperature and contact area upon impact have been estimated for smooth and three different roughened substrate cases. Copper powders were deposited on smooth and grit-blasted copper and aluminium substrates and characterized through scanning electron microscopy and Romulus bond strength analyzer. The results indicate that the deformation and the resultant bonding were higher for the roughened substrates than that of smooth. The characteristic factors for bonding are reported and discussed. Thus the substrate roughness appears to be beneficial for the initial deposition efficiency of the kinetic spray process.

  14. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture

    International Nuclear Information System (INIS)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; Andrés, A. de; Prieto, C.

    2015-01-01

    Highlights: • ITO deposition on glass and PET at room temperature by using H. • High transparency and low resistance is obtained by tuning the H. • The figure of merit for ITO films on PET becomes maximal for thickness near 100 nm. - Abstract: The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H 2 in the gas mixture of H 2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H 2 /(Ar + H 2 ) ratio in the range of 0.3–0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, Φ TC = T 10 /R S , than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices

  15. Self-limiting growth of ZnO films on (0 0 0 1) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide

    International Nuclear Information System (INIS)

    Lin, Yen-Ting; Chung, Ping-Han; Lai, Hung-Wei; Su, Hsin-Lun; Lyu, Dong-Yuan; Yen, Kuo-Yi; Lin, Tai-Yuan; Kung, Chung-Yuan; Gong, Jyh-Rong

    2009-01-01

    Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N 2 O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 deg. C in a range of DEZn flow rates from 5.7 to 8.7 μmol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 deg. C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N 2 O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N 2 O precursors.

  16. Temperatura, luz e substrato para germinação de sementes de Pau-Brasil (Caesalpinia echinata Lam., Leguminosae - Caesalpinioideae Temperature, light and substrate for germination of seeds of Brazilwood (Caesalpinia echinata Lam., Leguminosae - Caesalpinioideae

    Directory of Open Access Journals (Sweden)

    Juliana Iura de Oliveira Mello

    2007-08-01

    Full Text Available Programas de preservação de Caesalpinia echinata, espécie considerada em risco de extinção, incluem a conservação ex situ, que poderia ser ainda mais intensificada pelo armazenamento, no longo prazo, de suas sementes. Embora já se tenha desenvolvido tecnologia suficiente para preservar a germinabilidade dessas sementes por até dois anos, ainda são insuficientes as informações acerca das condições adequadas para a germinação, mormente as referentes a temperatura, luz e substrato. Este trabalho visou avaliar os efeitos de temperaturas constantes de 10 a 45 °C em presença ou ausência de luz e o tipo (papel, areia e vermiculita e umidade do substrato sobre a germinação das sementes de pau-brasil. Concluiu-se que a semeadura deve ser realizada em rolo de papel, umedecido na relação 1:2,5 a 1:3,0 (substrato:água, em massa, e na temperatura de 25 °C, sem necessidade de luz.Preservation of the Brazilian endangered tree Caesalpinia echinata Lam. include the ex situ conservation that could be enhanced by the long term storage of its seeds. In despite of having enough technology to preserve brazilwood seed viability for at least two years, there is scarce information on the optimal conditions for germination, mainly concerning temperature, light and substrate. This research aimed to study the effects of the constant temperatures (10 to 45°C, the presence or absence of light and the moisture content of three substrates (paper, sand and vermiculite on the germination of C. echinata seeds. The results suggested that these seeds should be sowed on paper roll moistened at the ratio 1:2.5 or 1:3.0 (substrate:water, w/w at 25°C, no need for light.

  17. Real-time synchrotoron radiation X-ray diffraction and abnormal temperature dependence of photoluminescence from erbium silicates on SiO2/Si substrates

    Directory of Open Access Journals (Sweden)

    H. Omi

    2012-03-01

    Full Text Available The erbium silicate formation processes during annealing in Ar gas were monitored by synchrotron radiation grazing incidence X-ray diffraction (GIXD in real time and the optical properties of the silicates were investigated by photoluminescence measurements in spectral and time-resolved domains. The GIXD measurements show that erbium silicates and erbium oxide are formed by interface reactions between silicon oxide and erbium oxides deposited on silicon oxide by reactive sputtering in Ar gas and O2/Ar mixture gas ambiences. The erbium silicates are formed above 1060 °C in Ar gas ambience and above 1010 °C in O2/Ar gas ambience, and erbium silicides are dominantly formed above 1250 °C. The I15/2-I13/2 Er3+ photoluminescence from the erbium oxide and erbium silicate exhibits abnormal temperature dependence, which can be explained by the phonon-assisted resonant absorption of the 532-nm excitation photons into the 2H11/2 levels of Er3+ ions of the erbium compounds.

  18. The Influence of Prior Modes of Growth, Temperature, Medium, and Substrate Surface on Biofilm Formation by Antibiotic-Resistant Campylobacter jejuni.

    Science.gov (United States)

    Teh, Amy Huei Teen; Lee, Sui Mae; Dykes, Gary A

    2016-12-01

    Campylobacter jejuni is one of the most common causes of bacterial gastrointestinal food-borne infection worldwide. It has been suggested that biofilm formation may play a role in survival of these bacteria in the environment. In this study, the influence of prior modes of growth (planktonic or sessile), temperatures (37 and 42 °C), and nutrient conditions (nutrient broth and Mueller-Hinton broth) on biofilm formation by eight C. jejuni strains with different antibiotic resistance profiles was examined. The ability of these strains to form biofilm on different abiotic surfaces (stainless steel, glass, and polystyrene) as well as factors potentially associated with biofilm formation (bacterial surface hydrophobicity, auto-aggregation, and initial attachment) was also determined. The results showed that cells grown as sessile culture generally have a greater ability to form biofilm (P Biofilm was also greater (P biofilm formation in a strain-dependent manner. The strains were able to attach and form biofilms on different abiotic surfaces, but none of them demonstrated strong, complex, or structured biofilm formation. There were no clear trends between the bacterial surface hydrophobicity, auto-aggregation, attachment, and biofilm formation by the strains. This finding suggests that environmental factors did affect biofilm formation by C. jejuni, and they are more likely to persist in the environment in the form of mixed-species rather than monospecies biofilms.

  19. L-tyrosine immobilized on multiwalled carbon nanotubes: a new substrate for thallium separation and speciation using stabilized temperature platform furnace-electrothermal atomic absorption spectrometry.

    Science.gov (United States)

    Pacheco, Pablo H; Gil, Raúl A; Smichowski, Patricia; Polla, Griselda; Martinez, Luis D

    2009-12-10

    An approach for the separation and determination of inorganic thallium species is described. A new sorbent, L-tyrosine-carbon nanotubes (L-tyr-CNTs), was used and applied to the analysis of tap water samples. At pH 5.0, L-tyr was selective only towards Tl(III), while total thallium was determined directly by stabilized temperature platform furnace-electrothermal atomic absorption spectrometry (STPF-ETAAS). The Tl(III) specie, which was retained by L-tyrosine, was quantitatively eluted from the column with 10% of nitric acid. An on-line breakthrough curve was used to determine the column capacity, which resulted to be 9.00 micromol of Tl(III) g(-1) of L-tyr-CNTs with a molar ratio of 0.14 (moles of Tl bound to moles of L-tyr at pH 5). Transient peak areas revealed that Tl stripping from the column occurred instantaneously. Effects of sample flow rate, concentration and flow rate of the eluent, and interfering ions on the recovery of the analyte were systematically investigated. The detection limit for the determination of total thallium (3sigma) by STPF-ETAAS was 150 ng L(-1). The detection limit (3sigma) for Tl(III) employing the separation system was 3 ng L(-1), with an enrichment factor of 40. The precision of the method expressed as the relative standard deviation (RSD) resulted to be 3.4%. The proposed method was applied to the speciation and determination of inorganic thallium in tap water samples. The found concentrations were in the range of 0.88-0.91 microg L(-1) of Tl(III), and 3.69-3.91 microg L(-1) of total thallium.

  20. L-Tyrosine immobilized on multiwalled carbon nanotubes: A new substrate for thallium separation and speciation using stabilized temperature platform furnace-electrothermal atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Pacheco, Pablo H.; Gil, Raul A.; Smichowski, Patricia; Polla, Griselda; Martinez, Luis D.

    2009-01-01

    An approach for the separation and determination of inorganic thallium species is described. A new sorbent, L-tyrosine-carbon nanotubes (L-tyr-CNTs), was used and applied to the analysis of tap water samples. At pH 5.0, L-tyr was selective only towards Tl(III), while total thallium was determined directly by stabilized temperature platform furnace-electrothermal atomic absorption spectrometry (STPF-ETAAS). The Tl(III) specie, which was retained by L-tyrosine, was quantitatively eluted from the column with 10% of nitric acid. An on-line breakthrough curve was used to determine the column capacity, which resulted to be 9.00 μmol of Tl(III) g -1 of L-tyr-CNTs with a molar ratio of 0.14 (moles of Tl bound to moles of L-tyr at pH 5). Transient peak areas revealed that Tl stripping from the column occurred instantaneously. Effects of sample flow rate, concentration and flow rate of the eluent, and interfering ions on the recovery of the analyte were systematically investigated. The detection limit for the determination of total thallium (3σ) by STPF-ETAAS was 150 ng L -1 . The detection limit (3σ) for Tl(III) employing the separation system was 3 ng L -1 , with an enrichment factor of 40. The precision of the method expressed as the relative standard deviation (RSD) resulted to be 3.4%. The proposed method was applied to the speciation and determination of inorganic thallium in tap water samples. The found concentrations were in the range of 0.88-0.91 μg L -1 of Tl(III), and 3.69-3.91 μg L -1 of total thallium.

  1. Solid substrate fermentation

    Energy Technology Data Exchange (ETDEWEB)

    Tengerdy, R P

    1985-04-01

    Solid Substrate Fermentation (SSF) describes the microbiological tranformation of biological materials in their natural state, in contrast with liquid or submerged fermentations which are carried out in dilute solutions or slurries. The most important industrial microorganisms used in SSF are filamentous fungi and the critical factors in their growth are the control of the moisture level and the temperature. Traditionally, most SSFs are conducted in shallow trays (so that heat build up is avoided) and stacked in a moist chamber, however, the modern SSF should be able to mix large amounts of substrate for a uniform fermentation, maximum automization scale-up of the process, continuous operation and fermentation control and a promising new design is the Helical screw fermenter. At the present time SSF is used in the production of foods (e.g. mushrooms and oriental foods) in municipal, agricultural and industrial solid waste disposal and in the production of enzymes and speciality chemicals but it does not seem likely that it will replace prevalent liquid fermentation technologies. 29 references.

  2. Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

    Science.gov (United States)

    Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

    2009-02-01

    Ba0.7Sr0.3TiO3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 °C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (˜0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.

  3. Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

    International Nuclear Information System (INIS)

    Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

    2009-01-01

    Ba 0.7 Sr 0.3 TiO 3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 deg. C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (∼0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness

  4. Validation of chromatographic methods two to determine the composition of biogas and the concentration of volatile fatty acids generated in an anaerobic biodigester at different temperatures and compositions of substrate

    International Nuclear Information System (INIS)

    Jimenez Godinez, Ivannia

    2014-01-01

    Two methods of gas chromatography were validated: one to determine the concentration of volatile fatty acids and other for the proportion of CH 4 and CO 2 in biogas. Validations have characterized the production of biogas of biodigesters operated to 50 degrees celsius and 35 degrees celsius, and with three different substrate compositions: 100% manure, 90% manure - 10% food waste and 80% manure - 20% food waste. The results were analyzed statistically to verify if they present a normal distribution. The data obtained have been without normal distribution, so non-parametric statistics were applied and variance analysis tests of two factors for data without normal distribution: the Friedman test and Kruskal and Wallis, to determine if there were significant differences between the biogas produced in different operating conditions of the biodigesters. The results obtained have indicated without significant difference existing between the composition of biogas obtained for the six operating conditions. The results have been statistically without significant differences between treatments used and have checked that the variability of the results obtained for the biodigesters operated to 35 degrees celsius was higher than for those operated to 50 degrees celsius. In addition, the average percentage results of methane from biogesters operated to 50 degrees celsius have been greater and very constants. The stability of biodigesters has concluded that the highest percentages of food waste present in its composition have yielded with a higher productivity of biogas. The results have recommended the adoption as operating conditions, developed to 50 degrees celsius and a substrate composition of 80% manure and 20% food waste. (author) [es

  5. A study of reduction of patient's radiation exposure by using the new ortho screen film systems (4). A study of the possibility of higher developing temperature by observation of chest phantom radiographs

    International Nuclear Information System (INIS)

    Yagi, Hirofumi; Fukui, Toshihito; Yasutomo, Motokatsu; Takashima, Koosuke; Kuroda, Tokue; Nishitani, Hiromu.

    1995-01-01

    Recently, some new ortho screen-film systems (Konica EX system, Fuji AD system and Kodak IEF system) are being developed. The granulalities of these systems have been greatly improved and gross fogs are lower than those of traditional ortho screen-film systems. Even if the radiographs with the new ortho screen-film are processed at higher temperature than with the old ortho system such as Lanex Medium/TMC-RA (Eastman Kodak), the deterioration in the image quality is negligible. Furthermore, the speed of the screen-film systems increases as the developing temperature rises. Therefore, there may be the potential to reduce patients' radiation exposure without greatly decreasing the image quality. At that time, the problem arises how to determine the appropriate developing temperature. The limit of developing temperature for the new ortho system was determined as the temperature for getting the same gross fog in old ortho-system. In this report, phantom radiographs were made at various developing temperatures and the comments about the higher limit of the developing temperature were solicited from medical doctors who evaluated them. Consequently, it has been confirmed there are sufficient image quality in the radiographs which were developed at the higher developing temperature than at the temperature used in many faculties now. (author)

  6. High quality silicon-based substrates for microwave and millimeter wave passive circuits

    Science.gov (United States)

    Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

    2017-09-01

    Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

  7. Fabrication and characterization of nickel nanowires deposited on metal substrate

    International Nuclear Information System (INIS)

    Rahman, I.Z.; Razeeb, K.M.; Rahman, M.A.; Kamruzzaman, Md.

    2003-01-01

    The present investigation is a part of ongoing systematic study of production and process development of nanometer scale arrays of magnetic wires on metal substrates. Nickel nanowires are grown in ordered anodic alumina templates using galvanostatic electrodeposition. In this paper we report on the growth of nanowires on the electrochemical cell parameters such as bath temperature, pH and time. Focused ion beam analysis revealed heterogeneous growth of nickel nanowires. X-ray diffraction spectrum showed that FCC nickel changed the preferred orientation from (2 2 0) at lower bath temperatures to (2 0 0) at higher bath temperatures. Magnetic measurement showed that coercive fields were higher for wires with smaller diameters. Magneto-impedance was measured as a function of applied magnetic field and wire diameter

  8. Adhesion of rhodium films on metallic substrates

    International Nuclear Information System (INIS)

    Marot, L.; Covarel, G.; Tuilier, M.-H.; Steiner, R.; Oelhafen, P.

    2008-01-01

    Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength

  9. Adhesion of rhodium films on metallic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marot, L. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)], E-mail: laurent.marot@unibas.ch; Covarel, G.; Tuilier, M.-H. [Laboratoire Mecanique, Materiaux et Procedes de Fabrication, Pole STIC-SPI-Math 61 rue Albert Camus, Universite de Haute-Alsace, F-68093 - Mulhouse Cedex (France); Steiner, R.; Oelhafen, P. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

    2008-09-01

    Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength.

  10. Effect of surface area of substrates aiming the optimization of carbon nanotube production from ferrocene

    International Nuclear Information System (INIS)

    Osorio, A.G.; Bergmann, C.P.

    2013-01-01

    Highlights: ► An optimized synthesis of CNTs by ferrocene is proposed. ► The surface area of substrates influences the nucleation of CNTs. ► The higher the surface area of substrates the lower the temperature of synthesis. ► Chemical composition of substrates has no influence on the growth of CNTs. - Abstract: Ferrocene is widely used for the synthesis of carbon nanotubes due to its ability to act as catalyst and precursor of the synthesis. This paper proposes an optimization of the synthesis of carbon nanotubes from ferrocene, using a substrate with high surface area for their nucleation. Four different surface areas of silica powder were tested: 0.5, 50, 200 and 300 m 2 /g. Raman spectroscopy and microscopy were used to characterize the product obtained and X-ray diffraction and thermal analysis were also performed to evaluate the phases of the material. It was observed that the silica powder with the highest surface area allowed the synthesis of carbon nanotubes to occur at a lower temperature (600 °C), whereas substrates with a surface area lower than 50 m 2 /g will only form carbon nanotubes at temperatures higher than 750 °C. In order to evaluate the influence of chemical composition of the substrate, three different ceramic powders were analyzed: alumina, silica and zirconia. carbon black and previously synthesized carbon nanotubes were also used as substrate for the synthesis and the results showed that the chemical composition of the substrate does not play a relevant role in the synthesis of carbon nanotubes, only the surface area showed an influence.

  11. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y. [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2015-04-16

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  12. Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation

    Directory of Open Access Journals (Sweden)

    Pranab Biswas

    2014-05-01

    Full Text Available The diffusion behavior of arsenic (As and gallium (Ga atoms from semi-insulating GaAs (SI-GaAs into ZnO films upon post-growth annealing vis-à-vis the resulting charge compensation was investigated with the help of x-ray photoelectron spectroscopy (XPS and secondary ion mass spectroscopy. The films, annealed at 600 ºC and 700 ºC showed p-type conductivity with a hole concentration of 1.1 × 1018 cm−3 and 2.8 × 1019 cm−3 respectively, whereas those annealed at 800 ºC showed n-type conductivity with a carrier concentration of 6.5 × 1016 cm−3. It is observed that at lower temperatures, large fraction of As atoms diffused from the SI-GaAs substrates into ZnO and formed acceptor related complex, (AsZn–2VZn, by substituting Zn atoms (AsZn and thereby creating two zinc vacancies (VZn. Thus as-grown ZnO which was supposed to be n-type due to nonstoichiometric nature showed p-type behavior. On further increasing the annealing temperature to 800 ºC, Ga atoms diffused more than As atoms and substitute Zn atoms thereby forming shallow donor complex, GaZn. Electrons from donor levels then compensate the p-type carriers and the material reverts back to n-type. Thus the conversion of carrier type took place due to charge compensation between the donors and acceptors in ZnO and this compensation is the possible origin of anomalous conduction in wide band gap materials.

  13. Determination of trace selenium by solid substrate-room temperature phosphorescence enhancing method based on potassium chlorate oxidizing phenyl hydrazine-1,2-dihydroxynaphthalene-3,6-disulfonic acid system

    Science.gov (United States)

    Liu, Jia-Ming; Cui, Xiao-Jie; Li, Lai-Ming; Fu, Geng-Min; Lin, Shao-Xian; Yang, Min-Lan; Xu, Mei-Ying; Wu, Zhi-Qun

    2007-04-01

    A new method for the determination of trace selenium based on solid substrate-room temperature phosphorimetry (SS-RTP) has been established. This method was based on the fact that in HCl-KCl buffer solution, potassium chlorate could oxidize phenyl hydrazine to form chloridize diazo-ion after being heated at 100 °C for 20 min, and then the diazo-ion reacted with 1,2-dihydroxynaphthalene-3,6-disulfonic acid to form red azo-compound which could emit strong room temperature phosphorescence (RTP) signal on filter paper. Selenium could catalyze potassium chlorate oxidizing the reaction between phenyl hydrazine and 1,2-dihydroxynaphthalene-3,6-disulfonic acid, which caused the sharp enhancement of SS-RTP. Under the optimum condition, the relationship between the phosphorescence emission intensity (Δ Ip) and the content of selenium obeyed Beer's law when the concentration of selenium is within the range of 1.60-320 fg spot -1 (or 0.0040-0.80 ng ml -1 with a sample volume of 0.4 μl). The regression equation of working curve can be expressed as Δ Ip = 13.12 + 0.4839 CSe(IV) (fg spot -1) ( n = 6), with correlation coefficient r = 0.9991 and a detection limit of 0.28 fg spot -1 (corresponding to a concentration range of 7.0 × 10 -13 g ml -1 Se(IV), n = 11). After 11-fold measurement, R.S.D. were 2.8 and 3.5% for the samples containing 0.0040 and 0.80 ng ml -1 of Se(IV), respectively. This accurate and sensitive method with good repeatability has been successfully applied to the determination of trace selenium in Chinese wolfberry and egg yolk with satisfactory results. The mechanism of the enhancement of phosphorescence was also discussed.

  14. CrAlN coatings deposited by cathodic arc evaporation at different substrate bias

    International Nuclear Information System (INIS)

    Romero, J.; Gomez, M.A.; Esteve, J.; Montala, F.; Carreras, L.; Grifol, M.; Lousa, A.

    2006-01-01

    CrAlN is a good candidate as an alternative to conventional CrN coatings especially for high temperature oxidation-resistance applications. Different CrAlN coatings were deposited on hardened steel substrates by cathodic arc evaporation (CAE) from chromium-aluminum targets in a reactive nitrogen atmosphere at negative substrate bias between - 50 and - 400 V. The negative substrate bias has important effects on the deposition growth rate and crystalline structure. All our coatings presented hardness higher than conventional CrN coatings. The friction coefficient against alumina and tungsten carbide balls was around 0.6. The sliding wear coefficient of the CrAlN coatings was very low while an important wear was observed in the balls before a measurable wear were produced in the coatings. This effect was more pronounced as the negative substrate bias was increased

  15. Germinação e vigor de sementes de Sapindus saponaria L. submetidas a tratamentos pré-germinativos, temperaturas e substratos Germination and vigor of Sapindus saponaria L. seeds submitted pre-germinative treatments, temperatures and substrates

    Directory of Open Access Journals (Sweden)

    Lucicléia Mendes de Oliveira

    2012-04-01

    Full Text Available Sapindus saponaria L. é uma árvore de grande porte distribuída especialmente na região Amazônica, sendo de grande importância para o reflorestamento de áreas degradadas, na construção civil e confecção de brinquedos. O objetivo dessa pesquisa foi testar tratamentos pré-germinativos para superar a dormência e avaliar o efeito da temperatura e do substrato na germinação das sementes de S. saponaria. O experimento foi conduzido em ambiente protegido e no Laboratório de Análise de Sementes (LAS da Universidade Federal da Paraíba. Dois ensaios foram desenvolvidos, sendo no primeiro testados os seguintes tratamentos: imersão das sementes em ácido sulfúrico (H2SO4 por 0, 15, 30, 45 e 60 minutos, analisando-se as variáveis: emergência e índice de velocidade de emergência, comprimento e massa seca de plântulas. No segundo ensaio foi avaliado o efeito das temperaturas (25, 20-30, 30 e 35°C e substratos (areia, vermiculita e pó-de-coco na germinação e no vigor das sementes. Pelos resultados constata-se que a imersão das sementes de S. saponaria em ácido sulfúrico por 60 minutos é suficiente para superar a dormência acelerando e uniformizando a emergência das plântulas. A melhor condição para executar o teste de germinação é empregando temperatura constante de 30°C ou alternada de 20-30°C em substrato vermiculita ou apenas 30°C combinado com o substrato areia.Sapindus saponaria L. is a large tree distributed especially in the Amazon region is of great importance for the reforestation of degraded areas, construction and manufacture of toys. The aim of this study was to test pre-germination treatments to overcome dormancy and to evaluate the effect of temperature and substrate on seed germination of S. saponaria. The experiment was conducted in a protected ambient and the Seed Analysis Laboratory (SAL, Universidade Federal da Paraíba. Two tests were developed, and tested first in the following treatments: seeds

  16. High density microelectronics package using low temperature cofirable ceramics