Optical properties of thin Cu films as a function of substrate temperature

CERN Document Server

Savaloni, H

2003-01-01

Copper films (250 nm) deposited on glass substrates, at different substrate temperatures. Their optical properties were measured by ellipsometry (single wavelength of 589.3 nm) and spectrophotometry in the spectral range of 200-2600 nm. Kramers Kronig method was used for the analysis of the reflectivity curves of Cu films to obtain the optical constants of the films, while ellipsometry measurement was carried out as an independent method. The influence of substrate temperature on the microstructure of thin metallic films [Structure Zone Model ] is well established. The Effective Medium Approximation analysis was used to establish the relationship between the Structure Zone Model and Effective Medium Approximation predictions. Good agreements between Structure Zone Model as a function of substrate temperature and the values of volume fraction of voids obtained from Effective Medium Temperature analysis, are obtained; by increasing the substrate temperature the separation of the metallic grains decrease hence t...

Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films

International Nuclear Information System (INIS)

Beena, D.; Lethy, K.J.; Vinodkumar, R.; Mahadevan Pillai, V.P.; Ganesan, V.; Phase, D.M.; Sudheer, S.K.

2009-01-01

Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (T s ) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at T s ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface

Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Golshahi, S., E-mail: golshahi@iaurasht.ac.ir [Department of Physics, Rasht Branch, Islamic Azad University, Rasht (Iran, Islamic Republic of); Rozati, S.M. [Department of Physics, University of Guilan, 41335-1914 Rasht (Iran, Islamic Republic of); Botelho do Rego, A.M. [Centro de Quimica-Fisica Molecular and IN, Technical University of Lisbon, IST 1049-001 Lisboa (Portugal); Wang, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Elangovan, E.; Martins, R.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa (UNL), 2829-516 Caparica (Portugal)

2013-01-01

Highlights: Black-Right-Pointing-Pointer Hall-effect measurement introduces the optimum temperature of 450 Degree-Sign C for fabricating p-type high quality ZnO films. Black-Right-Pointing-Pointer X-ray photoelectron spectroscopy (XPS) proved the nitrogen presence at the surface of doped ZnO thin films at all substrate temperatures. Black-Right-Pointing-Pointer Films prepared at lower substrate temperature (300 Degree-Sign C and 350 Degree-Sign C) own wider band gaps. Black-Right-Pointing-Pointer Surface roughness strongly is affected by substrate temperature variations. - Abstract: The effect of substrate temperature (T{sub s}) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T{sub s} was varied from 300 Degree-Sign C to 500 Degree-Sign C, with a step of 50 Degree-Sign C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 Degree-Sign C and 500 Degree-Sign C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 0 0) crystal plane, irrespective of the variation in T{sub s}. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 Degree-Sign C is the optimal T{sub s}. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T{sub s} until 400 Degree-Sign C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T{sub s}. The optical band gap calculated from the absorption edge showed that the films deposited with T{sub s} of 300 Degree-Sign C and 350 Degree-Sign C possess higher values than those deposited at higher T{sub s}.

Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

International Nuclear Information System (INIS)

Golshahi, S.; Rozati, S.M.; Botelho do Rego, A.M.; Wang, J.; Elangovan, E.; Martins, R.; Fortunato, E.

2013-01-01

Highlights: ► Hall-effect measurement introduces the optimum temperature of 450 °C for fabricating p-type high quality ZnO films. ► X-ray photoelectron spectroscopy (XPS) proved the nitrogen presence at the surface of doped ZnO thin films at all substrate temperatures. ► Films prepared at lower substrate temperature (300 °C and 350 °C) own wider band gaps. ► Surface roughness strongly is affected by substrate temperature variations. - Abstract: The effect of substrate temperature (T s ) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T s was varied from 300 °C to 500 °C, with a step of 50 °C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 °C and 500 °C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 0 0) crystal plane, irrespective of the variation in T s . The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 °C is the optimal T s . Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T s until 400 °C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T s . The optical band gap calculated from the absorption edge showed that the films deposited with T s of 300 °C and 350 °C possess higher values than those deposited at higher T s .

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

Energy Technology Data Exchange (ETDEWEB)

Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Abdel-wahab, M.Sh [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni -Suef University, Beni-Suef (Egypt); Al-ghamdi, Attieh A. [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Dahlan, Ammar sadik [Department of architecture, faculty of environmental design, King Abdulaziz University, Jeddah (Saudi Arabia); Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Nano-Science & Semiconductor Labs, Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt)

2016-01-15

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ{sup (3)} was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

International Nuclear Information System (INIS)

Banerjee, A.N.; Ghosh, C.K.; Chattopadhyay, K.K.; Minoura, Hideki; Sarkar, Ajay K.; Akiba, Atsuya; Kamiya, Atsushi; Endo, Tamio

2006-01-01

The structural, optical and electrical properties of ZnO thin films (260 - 490 nm thick) deposited by direct-current sputtering technique, at a relatively low-substrate temperature (363 K), onto polyethylene terephthalate and glass substrates have been investigated. X-ray diffraction patterns confirm the proper phase formation of the material. Optical transmittance data show high transparency (80% to more than 98%) of the films in the visible portion of solar radiation. Slight variation in the transparency of the films is observed with a variation in the deposition time. Electrical characterizations show the room-temperature conductivity of the films deposited onto polyethylene terephthalate substrates for 4 and 5 h around 0.05 and 0.25 S cm -1 , respectively. On the other hand, for the films deposited on glass substrates, these values are 8.5 and 9.6 S cm -1 for similar variation in the deposition time. Room-temperature conductivity of the ZnO films deposited on glass substrates is at least two orders of magnitude higher than that of ZnO films deposited onto polyethylene terephthalate substrates under identical conditions. Hall-measurements show the maximum carrier concentration of the films on PET and glass substrate around 2.8 x 10 16 and 3.1 x 10 2 cm -3 , respectively. This report will provide newer applications of ZnO thin films in flexible display technology

Substrates and temperatures in the germination of Eriotheca gracilipes seeds

Directory of Open Access Journals (Sweden)

Paulo Alexandre Fernandes Rodrigues de Melo

Full Text Available ABSTRACT The Eriotheca gracilipes (K. Schum. A. Robyns is a forest specie that belongs to the Bombacaceae family and is considered an endemic specie from the Brazilian savanna. The aim of this study was to evaluate the best substrate and temperature for the vigor and germination test of E. gracilipes seeds. The experiment was carried out in a randomized design with a 4 x 7 factorial, with 28 treatments with the combination of four temperatures (20; 25; 30 and 20-30 ºC and seven substrates (coarse vermiculite, medium vermiculite, sand, Basaplant®, paper towel, on and between filter papers, with 4 repetitions of 25 seeds each. It was assessed germination, first count of germination, and germination speed index. In conclusion, for germination and vigor tests of Eriotheca gracilipes seeds it is recommended the paper roll as substrate at temperatures of 20-30, 25 or 30 ºC, and the Basaplant® and paper roll at the temperature of 30 ºC, respectively.

Molecular dynamics study of the effect of substrate temperature and Ar ion assisted deposition on the deposition of amorphous TiO_2 films

International Nuclear Information System (INIS)

Chen, Xian; Zhang, Jing; Zhao, Yu-Qing

2017-01-01

Highlights: • The surface roughness of a-TiO_2 films is decreased with the increment of the Ar ion assisted energy. • The surface roughness of a-TiO_2 films is decreased with higher substrate temperature when the substrate has an island structure. • The assisted Ar ion has power of making a flat surface and increasing the local temperature. • The assisted Ar ion will influence the growth mode with the change of surface atom mobility. • The Volmer-Weber (island) growth mode is inhibited with a high assisted Ar ion energy. - Abstract: This paper has investigated the impact of the substrate temperature and Ar ion assisted deposition on the surface structure formation mechanism and the film properties during the amorphous TiO_2 thin film deposition process with the molecular dynamics simulation method. The results show that the reduction of the surface roughness happen when the energy of Ar ions assisted is increased or the substrate temperature rises, and also the film density on surface is changed with the increasing of Ar ions energy and substrate temperature. It is also found that the Volmer-Weber (island) growth mode of films is promoted by the lower Ar ion energy and higher substrate temperature when the substrate has an island structure. The assisted Ar ion has power of making a flat surface and increasing the local temperature. Besides, it will influence the growth mode with the change of surface atom mobility. With a high assisted Ar ion energy the Volmer-Weber (island) growth mode is inhibited, which will be conducive to the formation of more smooth film surface.

Effect of substrate temperature and post annealing temperature on ZnO:Zn PLD thin film properties

Science.gov (United States)

Hasabeldaim, E.; Ntwaeaborwa, O. M.; Kroon, R. E.; Coetsee, E.; Swart, H. C.

2017-12-01

The pulsed laser deposition (PLD) substrate temperature and post-annealing temperature are effective methods to control the film optical and structural properties. The structure, morphology and optical properties of the deposited and post-annealed PLD ZnO:Zn films were studied. The films were deposited at different substrate temperatures of 50 °C, 200 °C and 400 °C. The films deposited at the substrate temperature of 50 °C and 200 °C were post-annealed in air at 400 °C and 600 °C for two hours. The films all had a highly preferential orientation with the hexagonal c-axis perpendicular to the substrate surface. The stress was found to be compressive stress with values -3.289 GPa, -4.864 GPa and -4.425 GPa for the film deposited at 50 °C, 200 °C and 400 °C, respectively. After post-annealing treatments, the stress of the films was almost completely released and stress-free films were obtained. The crystallite sizes were 19 nm, 25 nm and 39 nm, while the average particles sizes were 95 nm, 85 nm and 129 nm for the film deposited at 50 °C, 200 °C and 400 °C respectively. The crystallite sizes and particles sizes seemed to increase with the increase in the substrate temperature. Contrary to this, the change in crystallite sizes were inversely proportional to the particles size when increasing the post-annealing temperatures. Deconvoluted X-ray photoelectron spectroscopy peaks of the O1s binding energy region revealed that the films deposited at different substrate temperatures contained oxygen-related defects. Photoluminescence studies revealed that the films all emitted ultra-violet emission around 379 nm. The film deposited at 50 °C emitted a broad green emission centered at ∼524 nm. By increasing the substrate temperature up to 200 °C and 400 °C a new orange emission around 621 nm and 634 nm as well as a weak emission around 416 nm and 500 nm were observed, respectively. After post-annealing treatments, new bands over the visible region (blue, green

Temperature sensitivity of soil respiration is dependent on readily decomposable C substrate concentration

Science.gov (United States)

Larionova, A. A.; Yevdokimov, I. V.; Bykhovets, S. S.

2007-06-01

Temperature acclimation of soil organic matter (SOM) decomposition is one of the major uncertainties in predicting soil CO2 efflux by the increase in global mean temperature. A reasonable explanation for an apparent acclimation proposed by Davidson and colleagues (2006) based on Michaelis-Menten kinetics suggests that temperature sensitivity decreases when both maximal activity of respiratory enzymes (Vmax) and half- saturation constant (Ks) cancel each other upon temperature increase. We tested the hypothesis of the canceling effect by the mathematical simulation of the data obtained in the incubation experiments with forest and arable soils. Our data confirm the hypothesis and suggest that concentration of readily decomposable C substrate as glucose equivalent is an important factor controlling temperature sensitivity. The highest temperature sensitivity was observed when C substrate concentration was much lower than Ks. Increase of substrate content to the half-saturation constant resulted in temperature acclimation associated with the canceling effect. Addition of the substrate to the level providing respiration at a maximal rate Vmax leads to the acclimation of the whole microbial community as such. However, growing microbial biomass was more sensitive to the temperature alterations. This study improves our understanding of the instability of temperature sensitivity of soil respiration under field conditions, explaining this phenomenon by changes in concentration of readily decomposable C substrate. It is worth noting that this pattern works regardless of the origin of C substrate: production by SOM decomposition, release into the soil by rhizodeposition, litter fall or drying-rewetting events.

On the temperature effect of substrate and evaporation rate on condensate dispersion

International Nuclear Information System (INIS)

Orlov, Yu.F.; Belotserkovskaya, N.G.; Gustylev, V.K.

1978-01-01

On the basis of available and new experimental data an attempt has been made to generalize the results of studying the effect of the substrate temperature and evaporation rate on the dispersity of amorphous condensates of Sb 2 S 3 and on that of crystalline condensates of PbO and PbTe. The dispersity of the condensates is shown to decrease with a substrate temperature and evaporation rate. The specific surface decreases linearly with the 3-5-fold rise in the evaporation rate. A dispersity decrease is due to the temperature rise in the medium where condensation takes place. The pattern of dispersity dependence on the substrate temperature and evaporation rate does not depend on the mechanism of vapour condensation and is the same both for aerosol mechanism of the condensate formation and for vapour condensation directly on the substrate

Effect of substrate temperature on electrical and magnetic properties ...

Indian Academy of Sciences (India)

. Figure 1. The temperature dependence of resistivity for LPMO films grown at different substrate temperatures (solid and open circles are the data in zero and 1 T magnetic field). The inset shows the variation of magnetoresistance with ...

Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates

International Nuclear Information System (INIS)

ZhongZhenyang; Chen Peixuan; Jiang Zuimin; Bauer, Guenther

2008-01-01

Statistical information on GeSi islands grown on two-dimensionally pit-patterned Si substrates at different temperatures is presented. Three growth regimes on patterned substrates are identified: (i) kinetically limited growth at low growth temperatures, (ii) ordered island growth in an intermediate temperature range, and (iii) stochastic island growth within pits at high temperatures. A qualitative model based on growth kinetics is proposed to explain these phenomena. It can serve as a guidance to realize optimum growth conditions for ordered islands on patterned substrates

Metallic substrates for high temperature superconductors

Science.gov (United States)

Truchan, Thomas G.; Miller, Dean J.; Goretta, Kenneth C.; Balachandran, Uthamalingam; Foley, Robert

2002-01-01

A biaxially textured face-centered cubic metal article having grain boundaries with misorientation angles greater than about 8.degree. limited to less than about 1%. A laminate article is also disclosed having a metal substrate first rolled to at least about 95% thickness reduction followed by a first annealing at a temperature less than about 375.degree. C. Then a second rolling operation of not greater than about 6% thickness reduction is provided, followed by a second annealing at a temperature greater than about 400.degree. C. A method of forming the metal and laminate articles is also disclosed.

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

Science.gov (United States)

Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming

2012-07-11

Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

Molecular dynamics study of the effect of substrate temperature and Ar ion assisted deposition on the deposition of amorphous TiO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Chen, Xian, E-mail: mus_c@qq.com [Science and Technology on Analog Integrated Circuit Laboratory, ChongQing, 401332 (China); Zhang, Jing [Science and Technology on Analog Integrated Circuit Laboratory, ChongQing, 401332 (China); Zhao, Yu-Qing [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’AN, 710049 (China)

2017-05-15

Highlights: • The surface roughness of a-TiO{sub 2} films is decreased with the increment of the Ar ion assisted energy. • The surface roughness of a-TiO{sub 2} films is decreased with higher substrate temperature when the substrate has an island structure. • The assisted Ar ion has power of making a flat surface and increasing the local temperature. • The assisted Ar ion will influence the growth mode with the change of surface atom mobility. • The Volmer-Weber (island) growth mode is inhibited with a high assisted Ar ion energy. - Abstract: This paper has investigated the impact of the substrate temperature and Ar ion assisted deposition on the surface structure formation mechanism and the film properties during the amorphous TiO{sub 2} thin film deposition process with the molecular dynamics simulation method. The results show that the reduction of the surface roughness happen when the energy of Ar ions assisted is increased or the substrate temperature rises, and also the film density on surface is changed with the increasing of Ar ions energy and substrate temperature. It is also found that the Volmer-Weber (island) growth mode of films is promoted by the lower Ar ion energy and higher substrate temperature when the substrate has an island structure. The assisted Ar ion has power of making a flat surface and increasing the local temperature. Besides, it will influence the growth mode with the change of surface atom mobility. With a high assisted Ar ion energy the Volmer-Weber (island) growth mode is inhibited, which will be conducive to the formation of more smooth film surface.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

Science.gov (United States)

Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

2010-04-01

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

Science.gov (United States)

Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

1988-11-01

It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

Silver inkjet printing with control of surface energy and substrate temperature

International Nuclear Information System (INIS)

Lee, S-H; Shin, K-Y; Hwang, J Y; Kang, K T; Kang, H S

2008-01-01

The characteristics of silver inkjet printing were intensively investigated with control of surface energy and substrate temperature. A fluorocarbon (FC) film was spincoated on a silicon (Si) substrate to obtain a hydrophobic surface, and an ultraviolet (UV)/ozone (O 3 ) treatment was performed to control the surface wettability of the FC film surface. To characterize the surface changes, we performed measurements of the static and dynamic contact angles and calculated the surface energy by Wu's harmonic mean model. The surface energy of the FC film increased with the UV/O 3 treatment time, while the contact angles decreased. In silver inkjet printing, the hydrophobic FC film could reduce the diameter of the printed droplets. Merging of deposited droplets was observed when the substrate was kept at room temperature. Substrate heating was effective in preventing the merging phenomenon among the deposited droplets, and in reducing the width of printed lines. The merging phenomenon of deposited droplets was also prevented by increasing the UV/O 3 treatment time. Continuous silver lines in the width range of 48.04–139.21 µm were successfully achieved by inkjet printing on the UV/O 3 -treated hydrophobic FC films at substrate temperatures below 90 °C

Effect of substrate temperature on the morphology, structural and optical properties of Zn1-xCoxO thin films

International Nuclear Information System (INIS)

Yang, S.Y.; Man, B.Y.; Liu, M.; Chen, C.S.; Gao, X.G.; Wang, C.C.; Hu, B.

2011-01-01

Zn 1-x Co x O thin films with c-axis preferred orientation were deposited on sapphire (0 0 0 1) by pulsed laser deposition (PLD) technique at different substrate temperatures in an oxygen-deficient ambient. The effect of substrate temperature on the microstructure, morphology and the optical properties of the Zn 1-x Co x O thin films was studied by means of X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible-NIR spectrophotometer, fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted as substrate temperature rose. The structure of the samples was not distorted by the Co incorporating into ZnO lattice. The surface roughness of all samples decreased as substrate temperature increased. The Co concentration in the film was higher than in the target. Emission peak near band edge emission of ZnO from the PL spectra of the all samples was quenched because the dopant complexes acted as non-radiative centers. While three emission bands located at 409 nm (3.03 eV), 496 nm (2.5 eV) and 513 nm (2.4 eV) were, respectively, observed from the PL spectra of the four samples. The three emission bands were in relation to Zn interstitials, Zn vacancies and the complex of V O and Zn i (V O Zn i ). The quantity of the Zn interstitials maintained invariable basically, while the quantity of the V O Zn i slightly decreased as substrate temperature increased.

Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

Directory of Open Access Journals (Sweden)

Tetiana Slusar

2016-02-01

Full Text Available We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT of vanadium dioxide (VO2 thin films synthesized on aluminum nitride (AlN/Si (111 substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010 ‖ AlN (0001 with VO2 [101] ‖   AlN   [ 2 1 ̄ 1 ̄ 0 ] zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2 single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ∼130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications.

Influence of substrate temperature on certain physical properties ...

Indian Academy of Sciences (India)

2016-11-12

Nov 12, 2016 ... with increasing substrate temperature was explained on the basis of the Zener pinning effect. ... the inactivation of proteins as investigated by Feng et al [9] and in that .... ing 30 ml of nutrient agar medium for bacterial growth.

Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

International Nuclear Information System (INIS)

Sandstrom, R.L.; Giess, E.A.; Gallagher, W.J.; Segmueller, A.; Cooper, E.I.; Chisholm, M.F.; Gupta, A.; Shinde, S.; Laibowitz, R.B.

1988-01-01

We demonstrate that lanthanum gallate (LaGaO 3 ) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa 2 Cu 3 O/sub 7-//sub x/, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa 2 Cu 3 O/sub 7-//sub x/ films grown on LaGaO 3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K

Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1−x Snx films on Si substrate

International Nuclear Information System (INIS)

Mahmodi, H; Hashim, M R

2017-01-01

In this study, Ge 1−x Sn x alloy films are co-sputtered on Si(100) substrates using RF magnetron sputtering at different substrate temperatures. Scanning electron micrographs, atomic force microscopy (AFM), Raman spectroscopy, and x-ray photoemission spectroscopy (XPS) are conducted to investigate the effect of substrate temperature on the structural and optical properties of grown GeSn alloy films. AFM results show that RMS surface roughness of the films increases from 1.02 to 2.30 nm when raising the substrate temperature. This increase could be due to Sn surface segregation that occurs when raising the substrate temperature. Raman spectra exhibits the lowest FWHM value and highest phonon intensity for a film sputtered at 140 °C. The spectra show that decreasing the deposition temperature to 140 °C improves the crystalline quality of the alloy films and increases nanocrystalline phase formation. The results of Raman spectra and XPS confirm Ge–Sn bond formation. The optoelectronic characteristics of fabricated metal-semiconductor-metal photodetectors on sputtered samples at room temperature (RT) and 140 °C are studied in the dark and under illumination. The sample sputtered at 140 °C performs better than the RT sputtered sample. (paper)

Substrate temperature optimization for Cu(In, Ga)Se{sub 2} solar cells on flexible stainless steels

Energy Technology Data Exchange (ETDEWEB)

Liang, X.; Zhu, H.; Chen, J., E-mail: chenjingwei@126.com; Zhou, D.; Zhang, C.; Guo, Y.; Niu, X.; Li, Z.; Mai, Y., E-mail: yaohuamai@hbu.edu.cn

2016-04-15

Graphical abstract: - Highlights: • CIGS thin films are deposited on flexible SS substrates at different substrate temperatures. • CIGS thin films deposited at different T{sub S2} show different Ga/(Ga + In) ratio profiles. • All CIGS thin films show (112) and (220/204) preferred orientations with a shift to higher angles. • Conversion efficiency of 11.3% is obtained for CIGS solar cells deposited at 500 °C. - Abstract: Cu(In, Ga)Se{sub 2} (CIGS) thin films are deposited on flexible stainless steel (SS) substrates using the so called 3-stage co-evaporation process at different substrate temperatures ranging from 440 °C to 640 °C during the 2nd stage and the 3rd stage (T{sub S2}). The effects of T{sub S2} on the properties of CIGS thin films are systematically investigated. It is found by secondary ion mass spectrometry measurement that CIGS thin films deposited at different T{sub S2} show different Ga/(Ga + In) ratio (GGI) profiles along the growth direction. High T{sub S2} facilitates the grain growth and leads to larger grain size. However, high T{sub S2} worsens the spectral response of CIGS solar cells in the long wavelength range, which is partly attributed to the too much iron atom diffusion from the SS substrates into the CIGS thin films. All CIGS thin films show (112) preferred orientations with a shift to higher angle due to variation of compositions. A shoulder-like two-peak structure of (112) and (220/204) peaks appears for CIGS thin films deposited at lower T{sub S2}. Conversion efficiency of 11.3% is obtained for CIGS thin film solar cells deposited at the T{sub S2} of 500 °C.

Nickel W14 substrates for high-temperature superconductors

International Nuclear Information System (INIS)

Kolb-Telieps, Angelika; Gehrmann, Bodo

2008-01-01

High-temperature superconductivity is on the threshold of market launch. Starting from the results of a research project, ThyssenKrupp VDM has successfully developed an industrial-scale production process for nickel W14, which is used as substrate strip in superconductors destined for applications such as generators for wind turbines. The deoxidation of the melt presented a particular challenge. On the one hand, this is required in order to avoid fractures during the hot forming, on the other, the usual deoxidation elements have negative effects on the nanoscale texture and surface roughness needed for the substrate strip. (orig.)

An investigation of the adhesion of gold contacts on silicon detectors of nuclear radiation as a function of the substrate temperature

International Nuclear Information System (INIS)

Gumnerova, L.; Mikhajlov, M.

1981-01-01

The dependence of the adhesion of a thin gold film to an etched single crystal silicon substrate temperature and duration of aging is investigated. N-type silicon samples of 3Ω/m specific resistivity and 0.002 m thick are used. These samples are lapped by a series of abrasive powders with a grain diameter of 40 μm to 7 μm and etched by a 1:3:0.5 (HF:HNO 3 :CH 3 COOH) etching agent. The principal schemes of the evaporation equipment and the adhesion testing device are presented. Gold contacts are deposited at substrate temperature ranging from room temperature up to 433 K. The obtained gold films on the silicon substrates are tested and the results are given. It is seen that the adhesion of the gold film to the sample heated up to 373 K is about 50 times higher than the adhesion of the fresh unheated sample. The comparison between samples subjected to aging shows that the adhesion of heated samples is about 10 times higher and does not change essentially after ageing. Some possible explanations of this phenomena are given

Initial substrate moisture content and storage temperature affects chemical properties of bagged substrates containing controlled release fertilizer at two different temperatures

Science.gov (United States)

Bagged potting mixes can be stored for weeks or months before being used by consumers. Some bagged potting mixes are amended with controlled release fertilizers (CRF). The objective of this research was to observe how initial substrate moisture content and storage temperature affect the chemical p...

Significant effect of substrate temperature on the phase structure, optical and electrical properties of RF sputtered CIGS films

Energy Technology Data Exchange (ETDEWEB)

Yu Zhou; Yan Yong; Li Shasha; Zhang Yanxia; Yan Chuanpeng; Liu Lian; Zhang Yong [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhao Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

2013-01-01

Highlights: Black-Right-Pointing-Pointer Secondary phase exist in the RF sputtered CIGS films as it deposited at 150 Degree-Sign C and 500 Degree-Sign C. Black-Right-Pointing-Pointer CIGS films deposited beyond 350 Degree-Sign C show (1 1 2) prefer orientation. Black-Right-Pointing-Pointer E{sub g} of the CIGS films increased with the increase of substrate temperature. Black-Right-Pointing-Pointer Conductivity of the films is affected by 'variable range hopping' mechanism. - Abstract: This work studied the effect of substrate temperature on the phase structure, optical and electrical properties of the one-step radio frequency sputtered Cu(In,Ga)Se{sub 2} (CIGS) thin films. X-ray diffraction (XRD) analysis revealed that all the deposited CIGS films are chalcopyrite phase with polycrystalline structure. The films deposited beyond the substrate temperature of 350 Degree-Sign C show (1 1 2) prefer orientation. Raman spectra reveal that the 150 Degree-Sign C deposited CIGS film coexists with Cu{sub 2-x}Se phase and the 500 Degree-Sign C deposited film contains ordered defect compound (ODC) phase. With the increase of substrate temperature, energy band gap of the CIGS film increase from 0.99 to 1.27 eV. Films deposited at higher temperature exhibit larger electrical conductivity. Conductivity of the CIGS films is dominated by 'variable range hopping' mechanism. The disorder in our CIGS the films is associated with the formation of intrinsic defects such as V{sub Se} and In{sub Cu} for their low formation energy.

Effect of substrate temperature on ac conduction properties of amorphous and polycrystalline GaSe thin films

International Nuclear Information System (INIS)

Thamilselvan, M.; PremNazeer, K.; Mangalaraj, D.; Narayandass, Sa.K.; Yi, Junsin

2004-01-01

X-ray diffraction analysis of GaSe thin films used in the present investigation showed that the as-deposited and the one deposited at higher substrate temperature are in amorphous and polycrystalline state, respectively. The alternating current (ac) conduction properties of thermally evaporated films of GaSe were studied ex situ employing symmetric aluminium ohmic electrodes in the frequency range of 120-10 5 Hz at various temperature regimes. For the film deposited at elevated substrate temperature (573 K) the ac conductivity was found to increase with improvement of its crystalline structure. The ac conductivity (σ ac ) is found to be proportional to (ω s ) where s m calculated from ac conductivity measurements are compared with optical studies of our previous reported work for a-GaSe and poly-GaSe thin films. The distance between the localized centres (R), activation energy (ΔE σ ) and the number of sites per unit energy per unit volume N(E F ) at the Fermi level were evaluated for both a-GaSe and poly-GaSe thin films. Goswami and Goswami model has been invoked to explain the dependence of capacitance on frequency and temperature

Low temperature thermocompression bonding between aligned carbon nanotubes and metallized substrate

Energy Technology Data Exchange (ETDEWEB)

Chen, M X; Gan, Z Y; Liu, S [School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Song, X H, E-mail: chimish@163.com [Division of MOEMS, Wuhan National Lab for Optoelectronics, Wuhan 430074 (China)

2011-08-26

Vertically aligned carbon nanotube (VACNT) turf is proposed for use as an electrical and thermal contact material. For these applications, one route for circumventing the high temperatures required for VACNT growth using chemical vapor deposition (CVD) is used to grow firstly VACNTs on one substrate and then transfer them to other substrates. In this work, a nano thermocompression bonding technique between VACNTs and a metallized substrate is developed to allow dry mechanical transfer of the VACNTs. Unlike the diffusion bonding between two bulk materials, nano metal clusters have a high surface energy and the atoms are very active to form alloy with the contacted bulk metal material even at much lower temperatures, so nano thermocompression bonding can decrease the bonding temperature (150 deg. C) and pressure (1 MPa) and greatly shorten the bonding time from hours to 20 min. A debonding experiment shows that the bonding strength between VACNTs and the metallized layer is so high that a break is less likely to occur at the bonding interface.

Nanoparticle manipulation in the near-substrate areas of low-temperature, high-density rf plasmas

International Nuclear Information System (INIS)

Rutkevych, P.P.; Ostrikov, K.; Xu, S.

2005-01-01

Manipulation of a single nanoparticle in the near-substrate areas of high-density plasmas of low-temperature glow discharges is studied. It is shown that the nanoparticles can be efficiently manipulated by the thermophoretic force controlled by external heating of the substrate stage. Particle deposition onto or repulsion from nanostructured carbon surfaces critically depends on the values of the neutral gas temperature gradient in the near-substrate areas, which is directly measured in situ in different heating regimes by originally developed temperature gradient probe. The measured values of the near-surface temperature gradient are used in the numerical model of nanoparticle dynamics in a variable-length presheath. Specific conditions enabling the nanoparticle to overcome the repulsive potential and deposit on the substrate during the discharge operation are investigated. The results are relevant to fabrication of various nanostructured films employing structural incorporation of the plasma-grown nanoparticles, in particular, to nanoparticle deposition in the plasma-enhanced chemical-vapor deposition of carbon nanostructures in hydrocarbon-based plasmas

Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

International Nuclear Information System (INIS)

Lee, Sanghun; Cheon, Dongkeun; Kim, Won-Jeong; Ham, Moon-Ho; Lee, Woong

2012-01-01

Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were deposited on glass substrates by pulsed DC magnetron sputtering with varying sputtering power and substrate temperature while fixing the Ga concentration in the sputtering target. The application of higher sputtering power by pulsed DC magnetrons sputtering at a moderate temperature of 423 K results in increased carrier concentration and mobility which accompanied improved doping efficiency and crystalline quality. Substrate temperature was found to be the more dominant parameter in controlling the electrical properties and crystallinity, while the sputtering power played synergistic auxiliary roles. Electrical and optical properties of the GZO TCO films fulfilled requirements for transparent electrodes, despite relatively low substrate temperature (423 K) and small thickness (100 nm). In an attempt to improve the electrical properties of the GZO films by hydrogen-treatment, it was observed that the substitutional Ga plays the complex role of carrier generator as donor and carrier suppressor deactivating the oxygen vacancy simultaneously, which would complicate the property improvement by increasing doping efficiency.

Substrates and temperatures for the germination test of Chorisia glaziovii (O. Kuntze seeds

Directory of Open Access Journals (Sweden)

Roberta Sales Guedes

2011-12-01

Full Text Available The species Chorisia glaziovii O. Kuntze is native to the northeast of Brazil, belongs to Bombacaceae family and has diversified uses in folk medicine, recovery of degraded areas and upholstery industry. The present work was realizated with the objective to determine the substrate type and temperature for conduction of germination tests with C. glaziovii seeds. The experiment was carried out in the Laboratory of Analysis of Seeds (CCA - UFPB, Areia City, Northeast of Brazil, in design completely randomized with the treatments distributed in outline factorial 4 x 4 (temperatures of 25, 30, 35 and 20-30°C and substrate towel paper, among blotting paper, between sand and between vermiculite. The following parameters were analyzed: germination percentage, first count germination, germination speed index, and length of seedlings. The temperature of 35°C was shown inadequate for conduction of germination and vigor tests of seeds of C. glaziovii, independently of the used substrates. It is recommended for conduction of the germination and vigor tests of the seeds of C. glaziovii the substrate between sand or towel paper, in the temperatures of 25 and 20-30°C.

Electrochemical depositing rGO-Ti-rGO heterogeneous substrates with higher thermal conductivity and heat transfer performance compared to pure Ti.

Science.gov (United States)

Wang, Jing; Wang, Huatao; Zhang, Wenying; Yang, Xinyi; Wen, Guangwu; Wang, Yijie; Zhou, Weiwei

2017-02-17

Titanium (Ti) and its alloys are widely applied in many high strength, light weight applications, but their thermal conductivity is lower compared to that of other metals, which limits their further applications. In this paper, we demonstrated experimentally that rGO-Ti-rGO heterogeneous substrates with higher thermal conductivity, up to ∼38.8% higher than Ti, could be fabricated by electrochemical depositing rGO on their surface. The rGO layers are grown on the surface of Ti substrates, with appearance of bedclothes on the beds. The thickness of rGO layers is around 300-500 nm and around 600-1000 nm when deposited for 5 cycles and 10 cycles, respectively. According to the cooling experiment results, as-prepared Ti + rGO substrates can present excellent thermal conduction performance, and reduce the chip temperature close to 3.2 °C-13.1 °C lower than Ti alloy substrates with the heat flow density of 0.4-3.6 W cm -2 . Finally, the approach to electro-chemically deposit hundreds of nanometer rGO layers on the surface of Ti substrates can improve their thermal conductivity and heat transfer performance, which may have further application in the increasing thermal conduction of other metal-alloys, ceramics and polymers.

Influence of substrate temperature on the electronic and optical properties of Cr doped TiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Sen, Sagar; Gupta, Ratnesh, E-mail: gratnesh-ioi@yahoo.com [School of Instrumentation, Devi Ahilya University, Khandwa Road, Indore-452001 (India); Gupta, M. [UGC-DAE CSR Indore Centre, Indore 452 001 (India)

2016-05-23

We report the effects of substrate temperature on electrical and optical properties of the Cr-doped TiO{sub 2} film by pulsed laser deposition on Si(100). X-ray reflectivity pattern suggest that the single layer film have been deposited. Total thickness of 86 nm have been obtained. UV-Vis reflectance technique has been used to obtain its optical properties. From the Tauc plot, the bandgap for the film deposited at 150°C is higher compared to the film deposited at lower temperature.

Effects of the substrate temperature on the properties of CuIn5S8 thin films

International Nuclear Information System (INIS)

Gannouni, M.; Kanzari, M.

2011-01-01

Structural, optical and electrical properties of CuIn 5 S 8 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn 5 S 8 thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10 5 cm -1 at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn 5 S 8 thin film is an n-type semiconductor at 250 deg. C.

Temperature sensor realized by inkjet printing process on flexible substrate

International Nuclear Information System (INIS)

Dankoco, M.D.; Tesfay, G.Y.; Benevent, E.; Bendahan, M.

2016-01-01

Highlights: • Flexible temperature sensor was realized by inkjet printing process on Kapton substrate. • The jetting parameters were optimized to obtain evenly distributed silver coating layers and a large meander forming the sensor. • The Temperature sensor studied offers a good sensitivity, a good linearity and less than 5% hysteresis in extended measurement in the range of 20–60 °C. - Abstract: The objective of this study is to realize a printed and flexible temperature sensor to achieve surface temperature measurement of the human body. The sensor is a thermistor composed silver (Ag) deposited on a Polyimide substrate (Kapton HN). The meander was patterned by inkjet printing with a drop-on-demand Jetlab4 (Microfab Technologies Inc.). The resistance temperature coefficients have been studied in the temperature range of 20–60 °C with a range of voltage between 0 and 1 V. The stability versus time has also been measured without a sensor layer protection. The sensitive area of the sensor, silver lines width and the gap between the electrical conductors were, respectively 6.2 cm 2 , 300 μm, 60 μm. The mean temperature sensor sensitivity found was 2.23 × 10 −3 °C −1 . The results show a good linearity and less than 5% hysteresis in the extended measurement.

Substrate Integrated Waveguide (SIW)-Based Wireless Temperature Sensor for Harsh Environments.

Science.gov (United States)

Tan, Qiulin; Guo, Yanjie; Zhang, Lei; Lu, Fei; Dong, Helei; Xiong, Jijun

2018-05-03

This paper presents a new wireless sensor structure based on a substrate integrated circular waveguide (SICW) for the temperature test in harsh environments. The sensor substrate material is 99% alumina ceramic, and the SICW structure is composed of upper and lower metal plates and a series of metal cylindrical sidewall vias. A rectangular aperture antenna integrated on the surface of the SICW resonator is used for electromagnetic wave transmission between the sensor and the external antenna. The resonant frequency of the temperature sensor decreases when the temperature increases, because the relative permittivity of the alumina ceramic increases with temperature. The temperature sensor presented in this paper was tested four times at a range of 30⁻1200 °C, and a broad band coplanar waveguide (CPW)-fed antenna was used as an interrogation antenna during the test process. The resonant frequency changed from 2.371 to 2.141 GHz as the temperature varied from 30 to 1200 °C, leading to a sensitivity of 0.197 MHz/°C. The quality factor of the sensor changed from 3444.6 to 35.028 when the temperature varied from 30 to 1000 °C.

Substrate temperature dependent structural, optical and electrical properties of amorphous InGaZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Chen, X.F.; He, G., E-mail: ganghe01@issp.ac.cn; Gao, J.; Zhang, J.W.; Xiao, D.Q.; Jin, P.; Deng, B.

2015-05-25

Highlights: • Amorphous IGZO films are obtained by sputtering at various substrate temperatures. • Higher substrate temperatures lead to lower band gaps and high refractive index. • High temperature results in lower resistivity and larger charge carrier content. • Increased oxygen vacancies attributes to the reduced band gap. • Increased In content in IGZO films leads to the improved electrical properties. - Abstract: The effects of substrate temperature (T{sub s}) on the electrical and optical properties of amorphous InGaZnO thin films deposited by sputtering have been investigated. As T{sub s} increased from RT to 400 °C, all the films remained amorphous, the transmission in the visible region increased from 92.8% to 93.54%, and the band gap decreased from 3.42 eV to 3.31 eV. Based on Cauchy–Urbach model, the optical properties of all samples were analyzed by spectroscope ellipsometry (SE) and increase in refractive index has been detected with the increase in T{sub s}. Results of Hall measurement showed that substrate temperature have remarkable influence on the resistivity (ρ), carrier concentration (n), and carrier mobility (μ) of IGZO films. As T{sub s} increased from RT to 400 °C, ρ decreased from 46.6 to 0.24 Ω cm, and then increased to 1.11 Ω cm at T{sub s} of 400 °C, and n increase from 5.67 × 10{sup 15} to 7.33 × 10{sup 18} cm{sup −3}. Investigation of X-ray photoelectron spectroscopy (XPS) indicated that as T{sub s} increased, an O 1s component representing the oxygen vacancies increased in amount and that the intensity ratio of In/Ga increased but that of Zn/Ga decreased. The analysis suggests that the increase of oxygen vacancies could explain the increase in n and reduction in ρ and that the compositional change could explain the change of E{sub g}.

Low temperature synthesis of graphene on arbitrary substrates and its transport properties

Science.gov (United States)

Zhao, Rong; Akhtar, Meysam; Alruqi, Adel; Jasinski, Jacek; Sumanasekera, Gamini; Department of Physics; Astronomy, University of Louisville Collaboration; Conn CenterRenewable Energy, University of Louisville Collaboration

Here we report the direct synthesis of uniform and vertically oriented graphene films on multiple substrates including glass, Si/SiO2, and copper foil by radio-frequency plasma enhanced chemical vapor deposition (PECVD) using methane as the carbon precursor at relatively low temperatures. Raman spectra of all the samples show characteristic Raman peaks of graphene. The temperature dependence of electrical transport properties such as 4-probe resistance, thermo electrical power and hall mobility were measured for graphene grown on glass substrates at varying temperature from 500 ° C to 700 ° C. The morphological and surface characteristics were also studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). This work demonstrates the potential of low temperature and transfer-free graphene growth for future graphene-based electronic applications.

Temperature dependence of the aggregation behavior of aluminum nanoparticles on liquid substrate

International Nuclear Information System (INIS)

Pan, Qi-Fa; Cheng, Yi; Tao, Xiang-Ming; Yang, Bo; Li, Bao-Xing; Ye, Gao-Xiang

2015-01-01

Aluminum (Al) nanoparticle aggregates have been fabricated by thermal evaporation method on silicone oil surfaces at different substrate temperatures. The average diameter and height of the Al nanoparticles, namely Φ avg and H avg , are of the order of 10 1 and 10 0 nm, respectively. As the substrate temperature T s increases from 293 to 393 K, to the first order of approximation, Φ avg increases exponentially and H avg increases quickly between 333 and 373 K. By transmission electron microscopy measurement, we find that the Al nanoparticles and their aggregates exhibit amorphous structure over the whole temperature range. A simple theoretical model is established to explain the coalescence process of the nanoparticles with T s

NSSEFF Designing New Higher Temperature Superconductors

Science.gov (United States)

2017-04-13

AFRL-AFOSR-VA-TR-2017-0083 NSSEFF - DESIGINING NEW HIGHER TEMPERATURE SUPERCONDUCTORS Meigan Aronson THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF...2015 4. TITLE AND SUBTITLE NSSEFF - DESIGINING NEW HIGHER TEMPERATURE SUPERCONDUCTORS 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-10-1-0191 5c...materials, identifying the most promising candidates. 15. SUBJECT TERMS TEMPERATURE, SUPERCONDUCTOR 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

International Nuclear Information System (INIS)

Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R.; Restrepo-Parra, E.; Arango, P.J.

2010-01-01

Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T room ), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I D /I G or sp 3 /sp 2 ratio and not by the absolute sp 3 or sp 2 concentration.

Impact of temperature and substrate concentration on degradation rates of acetate, propionate and hydrogen and their links to microbial community structure.

Science.gov (United States)

Zhao, Jing; Westerholm, Maria; Qiao, Wei; Yin, Dongmin; Bi, Shaojie; Jiang, Mengmeng; Dong, Renjie

2018-05-01

The present study investigates the conversion of acetate, propionate and hydrogen consumption linked to the microbial community structure and related to temperature and substrate concentration. Biogas reactors were continuously fed with coffee powder (20 g-COD/L) or acetate (20, 40, and 60 g-COD/L) and operated for 193 days at 37 °C or 55 °C conditions. Starting HRT was 23 days which was then reduced to 7 days. The kinetics of acetate and propionate degradation and hydrogen consumption rates were measured in batch assays. At HRT 7 days, the degradation rate of propionate was higher in thermophilic batches, while acetate degradation rate was higher at mesophilic conditions. The gaseous hydrogen consumption in acetate reactors increased proportionally with temperature and substrate concentration, while the dissolved hydrogen was not affected. The relative high abundance of hydrogentrophic methanogens indicated that the methanogenesis was directed towards the syntrophic acetate oxidation pathway at high acetate concentration and high temperature. Copyright © 2018 Elsevier Ltd. All rights reserved.

Temperature dependence of the aggregation behavior of aluminum nanoparticles on liquid substrate

Energy Technology Data Exchange (ETDEWEB)

Pan, Qi-Fa; Cheng, Yi; Tao, Xiang-Ming; Yang, Bo [Zhejiang University, Department of Physics (China); Li, Bao-Xing [Hangzhou Normal University, Department of Physics (China); Ye, Gao-Xiang, E-mail: gxye@zju.edu.cn, E-mail: gxye@mail.hz.zj.cn [Zhejiang University, Department of Physics (China)

2015-03-15

Aluminum (Al) nanoparticle aggregates have been fabricated by thermal evaporation method on silicone oil surfaces at different substrate temperatures. The average diameter and height of the Al nanoparticles, namely Φ{sub avg} and H{sub avg}, are of the order of 10{sup 1} and 10{sup 0} nm, respectively. As the substrate temperature T{sub s} increases from 293 to 393 K, to the first order of approximation, Φ{sub avg} increases exponentially and H{sub avg} increases quickly between 333 and 373 K. By transmission electron microscopy measurement, we find that the Al nanoparticles and their aggregates exhibit amorphous structure over the whole temperature range. A simple theoretical model is established to explain the coalescence process of the nanoparticles with T{sub s}.

The Effect of Substrate Temperature on the Structural Properties of Spray Pyrolysed Lead Sulphide (PbS Thin Films

Directory of Open Access Journals (Sweden)

Mohammad G. Faraj

2014-09-01

Full Text Available Lead sulphide (PbS films were prepared by the chemical spray pyrolysis technique using a solution of Lead nitrate and thiourea. PbS films were deposited (prepared on glass substrate at varied temperature (250-350 oC. Effects of substrate temperature on the structural characteristics of the films were studied. The X-ray diffraction patterns’ results reveal that the all of PbS films have a face centered cubic structure. The X-ray diffraction study showed that irrespective of substrate temperature all the films exhibits a preferred orientation along the (200 plane. The degree of preferred orientation increased with the substrate temperature. It was observed that the increase of the substrate temperature increase the diffraction peak intensity of (200 plane which resulted in increase in grain size and good crystallinity of the films.

Direct synthesis of multi-layer graphene film on various substrates by microwave plasma at low temperature

Energy Technology Data Exchange (ETDEWEB)

Park, Hyun Jae [Plasma Technology Research Center, 814-2 Osickdo-dong (SGFEZ), Gunsan, Jeollabuk-do 573-540 (Korea, Republic of); Ahn, Byung Wook; Kim, Tae Yoo; Lee, Jung Woo [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Yong Ho; Choi, Yong Sup [Plasma Technology Research Center, 814-2 Osickdo-dong (SGFEZ), Gunsan, Jeollabuk-do 573-540 (Korea, Republic of); Song, Young Il, E-mail: physein01@skku.edu [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Su Jeong, E-mail: suhsj@skku.edu [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-07-31

We introduce a possible route for vertically standing multi-layer graphene films (VMGs) on various substrates at low temperature by electron cyclone resonance microwave plasma. VMG films on various substrates, including copper sheet, glass and silicon oxide wafer, were analyzed by studying their structural, electrical, and optical properties. The density and temperature of plasma were measured using Cylindrical Langmuir probe analysis. The morphologies and microstructures of multi-layer graphene were characterized using field emission scattering electron microscope, high resolution transmission electron microscope, and Raman spectra measurement. The VMGs on different substrates at the same experimental conditions synthesized the wrinkled VMGs with different heights. In addition, the transmittance and electrical resistance were measured using ultra-violet visible near-infrared spectroscopy and 4 probe point surface resistance measurement. The VMGs on glass substrate obtained a transmittance of 68.8% and sheet resistance of 796 Ω/square, whereas the VMGs on SiO{sub 2} wafer substrate showed good sheet resistance of 395 Ω/square and 278 Ω/square. The results presented herein demonstrate a simple method of synthesizing of VMGs on various substrates at low temperature for mass production, in which the VMGs can be used in a wide range of application fields for energy storage, catalysis, and field emission due to their unique orientation. - Highlights: • We present for synthesis method of graphene at low temperature on various substrates. • We grow the graphene films at low temperature under of 432 °C. • Structural information of graphene films were studied upon Raman spectroscopy. • Inter-layer spacing of vertically standing graphene relies on synthesis time. • We measured a transmittance and a resistance for graphene films on difference substrate.

Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

Energy Technology Data Exchange (ETDEWEB)

Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia)

2010-10-01

Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T{sub room}), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 {+-} 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I{sub D}/I{sub G} or sp{sup 3}/sp{sup 2} ratio and not by the absolute sp{sup 3} or sp{sup 2} concentration.

Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass

International Nuclear Information System (INIS)

Makino, Hisao; Miyake, Aki; Yamada, Takahiro; Yamamoto, Naoki; Yamamoto, Tetsuya

2009-01-01

Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth

Effect of Annealing and Operating Substrate Temperature on Methanol Gas Sensing Properties of SnO2 Thin Films

Directory of Open Access Journals (Sweden)

Priyanka Kakoty

2017-04-01

Full Text Available SnO2 based sensing nano-material have been synthesized by simple chemical route using Stannic (IV chloride-pentahydrate (SnCl4.5H2O as precursor. The structural properties of the prepared SnO2 nano-particles annealed at different temperatures have been characterized by X-ray diffraction (XRD analysis. The XRD patterns showed pure bulk SnO2 with a tetragonal rutile structure in the nano-powders. By increasing the annealing temperatures, the size of crystals were seen to increase, the diffraction peaks were found narrower and the intensity was higher. SnO2 films prepared by spin coating the prepared nano-material solution was tested at different temperatures for methanol vapour and it showed that the film prepared from SnO2 powder annealed at 500 0C shows the higher sensitivity to methanol vapour at 150 0C substrate temperature with significantly low response and recovery time.

Effect of substrate temperature on the radiation damage from MeV Si implantation in Si

International Nuclear Information System (INIS)

Yu, X.K.; Shao Lin; Rusakova, Irene; Wang, X.M.; Ma, K.B.; Chen, H.; Liu, Jiarui; Chu, W.-K.

2006-01-01

We have investigated the radiation damage by MeV implantation of Si in Si and its evolution under thermal annealing. Si wafers were implanted with MeV Si at various substrate temperatures. Damages were characterized by Rutherford-backscattering (RBS) channeling and by transmission electron microscopy (TEM). Defect formation after post-implantation annealing is very sensitive to the substrate temperatures during implantation. When the substrate temperature was decreased to 200 K, TEM revealed two distinct bands of damage after annealing: one around the mean projected ion range and another at half the projected range. Our study indicates that the formation of defects at half range results from the solid phase epitaxy growth of initial buried amorphous layers

Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

Energy Technology Data Exchange (ETDEWEB)

Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

2012-01-31

The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

OpenAIRE

BO HE; LEI ZHAO; JING XU; HUAIZHONG XING; SHAOLIN XUE; MENG JIANG

2013-01-01

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films grea...

The effect of substrate temperature on the microstructural, electrical and optical properties of Sn-doped indium oxide thin films

Science.gov (United States)

Raoufi, Davood; Taherniya, Atefeh

2015-06-01

In this work, Sn doping In2O3 (ITO) thin films with a thickness of 200 nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures. The crystal structure of these films was studied by X-ray diffraction technique. The sheet resistance was measured by a four-point probe. Van der Pauw method was used to measure carrier density and mobility of ITO films. The optical transmittance spectra were recorded in the wavelength region of 300-800 nm. Scanning electron microscope (SEM) has been used for the surface morphology analysis. The prepared ITO films exhibited body-centered cubic (BCC) structure with preferred orientation of growth along the (2 2 2) crystalline plane. The grain size of the films increases by rising the substrate temperature. Transparency of the films, over the visible light region, is increased with increasing the substrate temperature. It is found that the electrical properties of ITO films are significantly affected by substrate temperature. The electrical resistivity decreases with increasing substrate temperature, whereas the carrier density and mobility are enhanced with an increase in substrate temperature. The evaluated values of energy band gap Eg for ITO films were increase from 3.84 eV to 3.91 eV with increasing the substrate temperatures from 200 °C to 500 °C. The SEM micrographs of the films revealed a homogeneous growth without perceptible cracks with particles which are well covered on the substrate.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

Energy Technology Data Exchange (ETDEWEB)

Lakshmanan, Saravanan; Rao, Subha Krishna [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India); Muthuvel, Manivel Raja [Defence Metallurgical Research Laboratory (DMRL), Hyderabad 500058 (India); Chandrasekaran, Gopalakrishnan [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India); Therese, Helen Annal, E-mail: helen.a@ktr.srmuniv.ac.in [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India)

2017-08-01

Highlights: • Ta/CoFeB(50 nm)/Ta thin films were deposited at various substrate temperatures (T{sub s}). • CoFeB films deposited at T{sub s} such as RT, 450 °C, 475 °C and 500 °C exhibited perpendicular coercivity. • CoFeB deposited at 475 °C displayed a higher coercivity of 315 Oe and a low M{sub s} of 169 emu/cc. • The enhanced crystallization of CoFeB at the Ta/CoFeB interface results in higher H{sub c} (⟂). - Abstract: Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (T{sub s}) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (M{sub s}) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

KAUST Repository

Stavarache, Ionel

2017-07-21

Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling of nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. It is reported here the significant progress introduced by synthesis procedure to the in-situ structuring of Ge nanocrystallites in SiO₂ thin films by heating the substrate at low temperature, 400 °C during co-deposition of Ge and SiO₂ by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO₂ photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 10¹⁴ Jones, quick response and significant conversion efficiency of 850 %. This simple preparation approach brings an important contribution to the efort of structuring Ge nanocrystallites in SiO₂ thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

Effects of the substrate temperature on the properties of CuIn{sub 5}S{sub 8} thin films

Energy Technology Data Exchange (ETDEWEB)

Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

2011-10-01

Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn{sub 5}S{sub 8} thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 5} cm{sup -1} at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 250 deg. C.

New Crystal-Growth Methods for Producing Lattice-Matched Substrates for High-Temperature Superconductors

Energy Technology Data Exchange (ETDEWEB)

Boatner, L.A.

2008-06-24

This effort addressed the technical problem of identifying and growing, on a commercial scale, suitable single-crystal substrates for the subsequent deposition of epitaxial thin films of high temperature semiconductors such as GaN/AlN. The lack of suitable lattice-matched substrate materials was one of the major problem areas in the development of semiconducting devices for use at elevated temperatures as well as practical opto-electronic devices based on Al- and GaN technology. Such lattice-matched substrates are necessary in order to reduce or eliminate high concentrations of defects and dislocations in GaN/AlN and related epitaxial thin films. This effort concentrated, in particular, on the growth of single crystals of ZnO for substrate applications and it built on previous ORNL experience in the chemical vapor transport growth of large single crystals of zinc oxide. This combined expertise in the substrate growth area was further complemented by the ability of G. Eres and his collaborators to deposit thin films of GaN on the subject substrates and the overall ORNL capability for characterizing the quality of such films. The research effort consisted of research on the growth of two candidate substrate materials in conjunction with concurrent research on the growth and characterization of GaN films, i.e. the effort combined bulk crystal growth capabilities in the area of substrate production at both ORNL and the industrial partner, Commercial Crystal Growth Laboratories (CCL), Naples, Florida, with the novel thin-film deposition techniques previously developed in the ORNL SSD.

The influence of substrate temperature and deposition pressure on pulsed laser deposited thin films of CaS:Eu{sup 2+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Nyenge, R.L. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Physics Department, Kenyatta University, P.O. Box 43844-0100, Nairobi (Kenya); Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Ntwaeaborwa, O.M., E-mail: ntwaeab@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa)

2016-01-01

The aim of this study was to investigate the influence of substrate temperature and argon deposition pressure on the structure, morphology and photoluminescence emission (PL) properties of pulsed laser deposited thin films of CaS:Eu{sup 2+}. The PL intensity improved significantly upon reaching substrate temperature of 650 °C. The (200) peak gradually became the preferred orientation. The increase in PL intensity as well as surface roughness is attributed to improved crystallinity and higher growth rates, respectively. The best PL intensity as a function of deposition pressure was obtained at an argon pressure of 80 mTorr. The initial increase and eventual drop in PL intensity as deposition pressure increases is ascribed to the changes in growth rates.

An Inverse Relationship Links Temperature and Substrate Apparent Affinity in the Ion-Coupled Cotransporters rGAT1 and KAAT1

Directory of Open Access Journals (Sweden)

Antonio Peres

2012-11-01

Full Text Available The effects of temperature on the operation of two ion-coupled cotransporters of the SLC6A family, namely rat GAT1 (SLC6A1 and KAAT1 (SLC6A19 from Manduca sexta, have been studied by electrophysiological means in Xenopus laevis oocytes expressing these proteins. The maximal transport-associated current (Imax and the apparent substrate affinity (K05 were measured. In addition to the expected increase in transport rate (Q10 = 3–6, both transporters showed greater K05 values (i.e., a decrease in apparent affinity at higher temperatures. The transport efficiency, estimated as Imax/K05, increased at negative potentials in both transporters, but did not show statistically significant differences with temperature. The observation that the apparent substrate affinity is inversely related to the transport rate suggests a kinetic regulation of this parameter. Furthermore, the present results indicate that the affinities estimated at room temperature for mammalian cotransporters may not be simply extrapolated to their physiological operating conditions.

Effect of substrate temperature on structural and optical properties of nitrogen doped SnO2 thin film

International Nuclear Information System (INIS)

Thakur, Anup; Kumar, Varinder; Kang, Se Jun; Lee, Ik-Jae; Gautam, Sanjeev; Chae, K. H.; Shin, Hyun Joon

2014-01-01

Nitrogen doped SnO 2 thin films (thickness ∼ 250 nm) were deposited at different substrate temperature by radio frequency (rf) sputtering method. Crystal structure, morphology and optical properties of these films were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS-NIR spectrophotometer, respectively. XRD measurement suggests that the film deposited at room temperature was amorphous in nature and films deposited at higher temperature were crystalline in nature. The film deposited at RT and 200 °C have transparency more than 90% in visible region but the film deposited at 400 °C has lesser transparency. Red shift was observed in the absorption edge may be due to decrease in ionicity due to the formation of the Sn-N bond

Temperature and angular dependence of substrate response in SEGR

International Nuclear Information System (INIS)

Mouret, I.; Allenspach, M.; Schrimpf, R.D.; Brews, J.R.; Galloway, K.F.

1994-01-01

This work examines the role of the substrate response in determining the temperature and angular dependence of Single-Event Gate Rupture (SEGR). Experimental data indicate that the likelihood of SEGR increases when the temperature of the device is increased or when the incident angle is made closer to normal. In this work, simulations are used to explore this influence of high temperature on SEGR and to support physical explanations for this effect. The reduced hole mobility at high temperature causes the hole concentration at the oxide-silicon interface to be greater, increasing the transient oxide field near the strike position. In addition, numerical calculations show that the transient oxide field decreases as the ion's angle of incidence is changed from normal. This decreased field suggests a lowered likelihood for SEGR, in agreement with the experimental trend

Fabrication of AlN thin films on different substrates at ambient temperature

CERN Document Server

Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

2002-01-01

Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

Science.gov (United States)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

Hydrogenated amorphous silicon solar cells fabricated at low substrate temperature 110°C on flexible PET substrate

Science.gov (United States)

Ramakrishna, M.; Kumari, Juhi; Venkanna, K.; Agarwal, Pratima

2018-05-01

In this paper, we report a-Si:H solar cells fabricated on flexible Polyethylene terephthalate (PET) and corning glass. The a-Si:H thin films were prepared at low substrate temperature (110oC) on corning 1737 glass with different rf powers. The influence of rf power on structural and optoelectronic properties of i-a-Si:H were studied. The films deposited at rf power 50W show less broadening of peak. This indicates these films are more ordered. With this optimized parameter for i-layer, solar cells fabricated on flexible PET substrate show best efficiency of 3.3% whereas on corning glass 3.82%.

Structural and photoluminescence characterization of SnO{sub 2}: F thin films deposited by advanced spray pyrolysis technique at low substrate temperature

Energy Technology Data Exchange (ETDEWEB)

Shewale, P.S. [Thin Film Physics Laboratory, Department of Electronics, Shivaji University, Kolhapur 416004 (India); Ung Sim, Kyu; Kim, Ye-bin; Kim, J.H. [Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500757 (Korea, Republic of); Moholkar, A.V. [Department of Physics, Shivaji University, Kolhapur 416004 (India); Uplane, M.D., E-mail: mdu_eln@unishivaji.ac.in [Thin Film Physics Laboratory, Department of Electronics, Shivaji University, Kolhapur 416004 (India)

2013-07-15

Fluorine doped tin oxide (FTO) thin films were deposited on glass substrates, at different substrate temperatures using advanced spray pyrolysis technique. X-ray diffraction studies showed that the crystallinity of the thin films increased with increasing substrate temperature. FESEM and AFM studies support the conclusions drawn from X-ray diffraction studies. X-ray photoelectron studies confirm oxygen deficiency in formation of the FTO nanocrystallites. The photoluminescence of the FTO films were investigated. It was found that, room temperature photoluminescence spectra are dominated by oxygen vacancies and exhibit a rich violet photoluminescence band about ∼404 nm with an extensively feeble red emission about 700 nm. The Photoluminescence intensity varies with the substrate temperature. The photoemission position is observed to be independent of substrate temperature. -- Highlights: ► Photoluminescent FTO thin films were deposited at low substrate temperatures. ► Influence of substrate temperature on the PL characteristics was studied. ► The samples are polycrystalline with a cassiterite tetragonal crystal structure. ► The room temperature UV/violet PL emission was dominated by the oxygen vacancies. ► PL efficiency is optimum at 613 K substrate temperature.

Testing the effects of temperature and humidity on printed passive UHF RFID tags on paper substrate

Science.gov (United States)

Linnea Merilampi, Sari; Virkki, Johanna; Ukkonen, Leena; Sydänheimo, Lauri

2014-05-01

This article is an interesting substrate material for environmental-friendly printable electronics. In this study, screen-printed RFID tags on paper substrate are examined. Their reliability was tested with low temperature, high temperature, slow temperature cycling, high temperature and high humidity and water dipping test. Environmental stresses affect the tag antenna impedance, losses and radiation characteristics due to their impact on the ink film and paper substrate. Low temperature, temperature cycling and high humidity did not have a radical effect on the measured parameters: threshold power, backscattered signal power or read range of the tags. However, the frequency response and the losses of the tags were slightly affected. Exposure to high temperature was found to even improve the tag performance due to the positive effect of high temperature on the ink film. The combined high humidity and high temperature had the most severe effect on the tag performance. The threshold power increased, backscattered power decreased and the read range was shortened. On the whole, the results showed that field use of these tags in high, low and changing temperature conditions and high humidity conditions is possible. Use of these tags in combined high-humidity and high-temperature conditions should be carefully considered.

Effect of the substrate temperature on the microstructure and texture of Mg90Zr10 (at.%) films deposited by sputtering

International Nuclear Information System (INIS)

Garces, Gerardo; Landais, Stephan; Adeva, Paloma

2006-01-01

The microstructure of Mg 90 Zr 10 (at.%) films obtained by sputtering onto copper substrate at three different temperatures (180, 320 and 350 deg. C) has been studied. Films exhibited an intense (0 0 0 1) basal plane fibre texture with the fibre axis parallel to the growth direction. Their microstructure consisted of columnar grains growing from the copper substrate to the free surface which is typical of the zone II of the Movchan and Demchishin zone model developed for PVD materials. Nevertheless, the microstructure of films was dependent on the substrate temperature. The grain diameter increased as the substrate temperature was increased. Moreover, the dislocation density inside the grains as well as that piled-up forming sub-grain boundaries decreased as the deposition temperature increased. Although the film growth in zone II is controlled by surface diffusion the larger surface mobility of the atoms as the substrate temperature increased led to changes in the solubility of zirconium. At low substrate temperatures all zirconium was in solid solution. However, at 350 deg. C the formation of small zirconium particles occurred at grain boundaries

Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

Science.gov (United States)

Riascos, H.; Duque, J. S.; Orozco, S.

2017-01-01

ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

KAUST Repository

Singh, Devendra

2017-08-24

Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

KAUST Repository

Singh, Devendra; Kumar, Ravi; Ganguli, Tapas; Major, Syed S

2017-01-01

Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

Substrate effects on photoluminescence and low temperature phase transition of methylammonium lead iodide hybrid perovskite thin films

Science.gov (United States)

Shojaee, S. A.; Harriman, T. A.; Han, G. S.; Lee, J.-K.; Lucca, D. A.

2017-07-01

We examine the effects of substrates on the low temperature photoluminescence (PL) spectra and phase transition in methylammonium lead iodide hybrid perovskite (CH3NH3PbI3) thin films. Structural characterization at room temperature with X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy indicated that while the chemical structure of films deposited on glass and quartz was similar, the glass substrate induced strain in the perovskite films and suppressed the grain growth. The luminescence response and phase transition of the perovskite thin films were studied by PL spectroscopy. The induced strain was found to affect both the room temperature and low temperature PL spectra of the hybrid perovskite films. In addition, it was found that the effects of the glass substrate inhibited a tetragonal to orthorhombic phase transition such that it occurred at lower temperatures.

Influence of substrate temperature on the optical and electrical properties magnetron sputtering ITO films

International Nuclear Information System (INIS)

Khripunov, G.S.; Yurchenko, G.V.

1999-01-01

Electrical and optical properties of ITO films obtained at substrate temperature from 200 degree C to 500 degree C by magnetron sputtering of target 95% In 2 O 3 - 5% SnO 2 were studied. It was shown that the ITO film obtained at the substrate temperature 300 i N have optimum combination of the optical and electrical characteristics: resistivity 2.1 centre dot 10 -4 Ω cm, transmittance in visible spectral range about 88% at the thickness film 0.61 μ, factor of quality reaches 8.2 centre dot 10 -2 Ω 1

Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

Science.gov (United States)

He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

2013-10-01

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

Science.gov (United States)

Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

2017-10-01

Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

Directory of Open Access Journals (Sweden)

Javed Iqbal

2016-10-01

Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

Top-Emission Organic Light Emitting Diode Fabrication Using High Dissipation Graphite Substrate

Directory of Open Access Journals (Sweden)

Yu-Sheng Tsai

2014-01-01

Full Text Available This study uses a synthetic graphite fiber as the heat dissipation substrate for top-emission organic light emitting diode (TEOLED to reduce the impact from joule heat. UV glue (YCD91 was spin coated onto the substrate as the insulation layer. The TEOLED structure is (glass; copper; graphite substrate/YCD91 glue/Al/Au/EHI608/TAPC/Alq3/LiF/Al/Ag. The proposed graphite fiber substrate presents better luminous performance compared with glass and copper substrate devices with luminance of 3055 cd/m2 and current efficiency of 6.11 cd/A at 50 mA/cm2. When lighting period of different substrates TEOLED, the substrate case back temperature was observed using different lighting periods. A glass substrate element operating from 5 to 25 seconds at 3000 cd/m2 luminance produced a temperature rate of 1.207°C/sec. Under 4000 cd/m2 luminance the copper and graphite substrate temperature rates were 0.125°C/sec and 0.088°C/sec. Graphite component lifetime was determined to be 1.875 times higher than the glass components and 1.125 times higher than that of copper.

Enhanced adhesion between carbon nanotubes and substrate surfaces by low-temperature annealing

International Nuclear Information System (INIS)

Jang, Chi Woong; Byun, Young Tae; Woo, Deok Ha; Lee, Seok; Jhon, Young Min

2012-01-01

We enhanced the adhesion forces between carbon nanotubes (CNTs) and the substrate surface by using a low-temperature annealing process at 180 .deg. C for 300 s to protect the CNTs throughout the processes in photolithography for fabricating CNT-based devices, especially ion and bio sensors which are always exposed to liquids. The adhesion force was tested by using the adhesion durability test of soaking the fabricated CNT field effect transistors (CNT-FETs) in de-ionized water at room temperature for 300 s, and the adsorption quantities of CNTs were analyzed by using I - V measurements on the CNT-FETs before and after each adhesion durability test. The conductance change of the CNT-FETs fabricated with the annealing process was considerably decreased by more than a factor of 10 5 compared to that without the annealing process, implying that CNTs adhere much more strongly to the substrate after the annealing process.

Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

International Nuclear Information System (INIS)

Lin, Y.C.; Li, J.Y.; Yen, W.T.

2008-01-01

Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 x 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%

Effect of substrate temperature and deposition rate on the morphology and optical properties of Ti films

Energy Technology Data Exchange (ETDEWEB)

Einollahzadeh-Samadi, M.; Dariani, R.S., E-mail: dariani@alzahra.ac.ir

2013-09-01

Titanium films are deposited on transparent fluorine-doped tin oxide (FTO) glass substrates by DC magnetron sputtering process. Influences imposed by sputtering rate and substrate temperature on surface morphology and optical properties of the deposited Ti films are investigated. We observed that all the sputtered films exhibit uniform and compact surface morphology without peeling and cracking. Morphology of the films is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD). The optical properties of the films are investigated using UV–vis spectroscopy. The morphological studies indicate that by increasing the substrate temperature from room temperature to 250 °C and/or decreasing sputtering rate from 660 Å/min to 540 Å/min the surface roughness decreased from 73.4 to 31.0 nm and the grain size increases from 50.76 nm to 163.93 nm. An important effect of the root mean square (RMS) surface roughness and grain size is modification of the films optical properties. In fact, an enhancement of refractive index n for the Ti films deposited at high substrate temperature and/or high deposition rate is observed, that is attributed to reduction of RMS roughness. This effect is attributed to increment of fractional volume which leads to an increase in density of deposited film. Thus, by controlling the sputtering conditions one can reach to the desired morphological and optical properties.

Self-assembly of gas-phase synthesized magnesium nanoparticles on room temperature substrates

International Nuclear Information System (INIS)

Venturi, F; Calizzi, M; Pasquini, L; Bals, S; Perkisas, T

2015-01-01

Magnesium nanoparticles (NPs) with initial size in the 10–50 nm range were synthesized by inert gas condensation under helium flow and deposited on room temperature substrates. The morphology and crystal structure of the NPs ensemble were investigated as a function of the deposition time by complementary electron microscopy techniques, including high resolution imaging and chemical mapping. With increasing amount of material, strong coarsening phenomena were observed at room temperature: small NPs disappeared while large faceted NPs developed, leading to a 5-fold increase of the average NPs size within a few minutes. The extent of coarsening and the final morphology depended also on the nature of the substrate. Furthermore, large single-crystal NPs were seen to arise from the self-organization of primary NPs units, providing a mechanism for crystal growth. The dynamics of the self-assembly process involves the basic steps of NPs sticking, diffusion on substrate, coordinated rotation and attachment/coalescence. Key features are the surface energy anisotropy, reflected by the faceted shape of the NPs, and the low melting point of the material. The observed phenomena have strong implications in relation to the synthesis and stability of nanostructures based on Mg or other elements with similar features. (paper)

Effect of substrate temperature on corrosion performance of nitrogen doped amorphous carbon thin films in NaCl solution

Energy Technology Data Exchange (ETDEWEB)

Khun, N.W. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, E., E-mail: MEJLiu@ntu.edu.s [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2009-07-01

Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on p-Si substrates by DC magnetron sputtering at varying substrate temperature from room temperature (RT) to 300 {sup o}C. The bonding structure, surface morphology and adhesion strength of the a-C:N films were investigated by using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch testing. The corrosion behavior of the a-C:N films was evaluated by potentiodynamic polarization test in a 0.6 M NaCl solution. The results indicated that the corrosion resistance of the films depended on the sp{sup 3}-bonded cross-link structure that was significantly affected by the substrate temperature.

Effect of substrate temperature on corrosion performance of nitrogen doped amorphous carbon thin films in NaCl solution

International Nuclear Information System (INIS)

Khun, N.W.; Liu, E.

2009-01-01

Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on p-Si substrates by DC magnetron sputtering at varying substrate temperature from room temperature (RT) to 300 o C. The bonding structure, surface morphology and adhesion strength of the a-C:N films were investigated by using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch testing. The corrosion behavior of the a-C:N films was evaluated by potentiodynamic polarization test in a 0.6 M NaCl solution. The results indicated that the corrosion resistance of the films depended on the sp 3 -bonded cross-link structure that was significantly affected by the substrate temperature.

Molecular dynamics investigation of nanoscale substrate topography and its interaction with liquids

Science.gov (United States)

Cordeiro Rodrigues, Jhonatam

Nanotechnology has been presenting successful applications in several areas. However, experimentation with nanoscale materials is costly and limited in analysis capability. This research investigates the use of molecular dynamics (MD) simulations to model and study nanomaterials and manufacturing processes. MD simulations are employed to reduce cost, optimize design, increase productivity and allow for the investigation of material interactions not yet observable through experimentation. This work investigates the interaction of water with substrates at the nanoscale. The effect of temperature, droplet impingement velocities and size, as well as substrate material, are investigated at the nanoscale. Several substrate topography designs were modeled to reveal their influence on the wettability of the substrate. Nanoscale gold and silicon substrates are more hydrophilic at higher temperatures than at room temperature. The reduction in droplet diameter increases its wettability. High impingement velocity of droplets does not influence final wettability of substrates but induces higher diffusion rates of droplets in a heated environment. Droplets deposited over a gradient of surface exposure presents spontaneous movement. The Leidenfrost effect was investigated at the nanoscale. Droplets of 4 and 10nm in diameter presented behaviors pertinent to the Leidenfrost effect at 373K, significantly lower than at micro scale and of potential impact to the field. Topographical features were manipulated using superhydrophobic coating resulting in micro whiskers. Nanoimprint lithography (NIL) was used to manufacture substrate topographies at the nanoscale. Water droplets were deposited on the substrates and their wettability was measured using droplet contact angles. Lower surface area exposure resulted in higher contact angles. The experimental relationships between surface topography and substrate wettability were used to validate the insights gained from MD simulations for

Gas phase considerations for the deposition of thin film silicon solar cells by VHF-PECVD at low substrate temperatures

NARCIS (Netherlands)

Rath, J.K.; Verkerk, A.D.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

2008-01-01

Fabrication of thin film silicon solar cells on cheap plastics or paper-like substrate requires deposition process at very low substrate temperature, typically ≤ 100 °C. In a chemical vapor deposition process, low growth temperatures lead to materials with low density, high porosity, high disorder

Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

International Nuclear Information System (INIS)

Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

2014-01-01

Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs

International Nuclear Information System (INIS)

Ney, A; Harris, J S Jr; Parkin, S S P

2006-01-01

The temperature dependence of the magnetization of a light emitting diode having a ferromagnetic contact (spin-LED) is measured from 2 to 300 K in magnetic fields from 30 to 70 kOe and it is found that it originates from the GaAs substrate. The magnetization of GaAs comprises a van Vleck-type paramagnetic contribution to the susceptibility which scales inversely with the band gap of the semiconductor. Thus, the temperature dependence of the band gap of GaAs accounts for the non-linear temperature dependent magnetic susceptibility of GaAs and thus, at large magnetic fields, for the spin-LED

Remote and direct plasma regions for low-temperature growth of carbon nanotubes on glass substrates for display applications

International Nuclear Information System (INIS)

Tabatabaei, M K; Ghafouri fard, H; Koohsorkhi, J; Khatami, S; Mohajerzadeh, S

2011-01-01

A novel method for growing carbon nanotubes (CNTs) on glass substrates is introduced in this study. A two-stage plasma was used to achieve low-temperature and vertically aligned CNTs. Ni deposited on indium tin oxide/glass substrate was used as the catalyst and hydrogen and acetylene were used as gas feeds. In this investigation a new technique was developed to grow vertically aligned CNTs at temperatures below 400 deg. C while CNT growth by plasma-enhanced chemical vapour deposition required high temperatures. Low-temperature growth of vertically aligned CNTs was suitable for the fabrication of micro-lens and self-oriented displays on glass substrates. Also, we have reported a new configuration for CNT-based display by means of controlling the refractive index of liquid crystal around the CNT by applying a proper voltage to the top and bottom array.

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

Science.gov (United States)

Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

2015-12-19

Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum

Directory of Open Access Journals (Sweden)

Marietta Seifert

2015-12-01

Full Text Available Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Effect of the substrate temperature on the microstructure and texture of Mg{sub 90}Zr{sub 10} (at.%) films deposited by sputtering

Energy Technology Data Exchange (ETDEWEB)

Garces, Gerardo [Department of Physical Metallurgy, CENIM, CSIC, Av. De Gregorio del Amo 8, 28040 Madrid (Spain)]. E-mail: ggarces@cenim.csic.es; Landais, Stephan [Office National dEtudes et de Recherches Aerospatiales, ONERA, BP72-29 Avenue de la Division Leclerc F-92322 Chatillon, Paris (France); Adeva, Paloma [Department of Physical Metallurgy, CENIM, CSIC, Av. De Gregorio del Amo 8, 28040 Madrid (Spain)

2006-11-30

The microstructure of Mg{sub 90}Zr{sub 10} (at.%) films obtained by sputtering onto copper substrate at three different temperatures (180, 320 and 350 deg. C) has been studied. Films exhibited an intense (0 0 0 1) basal plane fibre texture with the fibre axis parallel to the growth direction. Their microstructure consisted of columnar grains growing from the copper substrate to the free surface which is typical of the zone II of the Movchan and Demchishin zone model developed for PVD materials. Nevertheless, the microstructure of films was dependent on the substrate temperature. The grain diameter increased as the substrate temperature was increased. Moreover, the dislocation density inside the grains as well as that piled-up forming sub-grain boundaries decreased as the deposition temperature increased. Although the film growth in zone II is controlled by surface diffusion the larger surface mobility of the atoms as the substrate temperature increased led to changes in the solubility of zirconium. At low substrate temperatures all zirconium was in solid solution. However, at 350 deg. C the formation of small zirconium particles occurred at grain boundaries.

Effects of substrate temperature on the structure and mechanical properties of (TiVCrZrHf)N coatings

Energy Technology Data Exchange (ETDEWEB)

Liang, Shih-Chang [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Chang, Zue-Chin [Department of Mechanical Engineering, National Chin-Yi University of Technology, Taichung 411, Taiwan (China); Tsai, Du-Cheng [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Lin, Yi-Chen; Sung, Huan-Shin [Department of Mechanical Engineering, National Chin-Yi University of Technology, Taichung 411, Taiwan (China); Deng, Min-Jen [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Department of Optometry, Jen-Teh Junior College of Medicine, Nursing and Management, Miaoli County 356, Taiwan (China); Shieu, Fuh-Sheng, E-mail: fsshieu@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

2011-06-15

The present paper reports the influence of growth conditions on the characteristics of (TiVCrZrHf)N films prepared by rf reactive magnetron sputtering at various substrate temperatures. The nitrogen content is observed to decrease with increasing substrate temperature. The X-ray diffraction results indicate that all (TiVCrZrHf)N films are simple face centered cubic (FCC) structures. Initially, there is an obvious decrease followed by an increase in grain size with the increase in substrate temperature. The lower part of the microstructure has an amorphous structure. A nano grain structure (size {approx}1 nm) with a random orientation is also observed above the amorphous structure. The fully dense columnar structure with an fcc crystal phase then starts to develop. Extreme hardness of around 48 GPa is obtained in the present alloy design.

Effects of substrate temperature on the structure and mechanical properties of (TiVCrZrHf)N coatings

International Nuclear Information System (INIS)

Liang, Shih-Chang; Chang, Zue-Chin; Tsai, Du-Cheng; Lin, Yi-Chen; Sung, Huan-Shin; Deng, Min-Jen; Shieu, Fuh-Sheng

2011-01-01

The present paper reports the influence of growth conditions on the characteristics of (TiVCrZrHf)N films prepared by rf reactive magnetron sputtering at various substrate temperatures. The nitrogen content is observed to decrease with increasing substrate temperature. The X-ray diffraction results indicate that all (TiVCrZrHf)N films are simple face centered cubic (FCC) structures. Initially, there is an obvious decrease followed by an increase in grain size with the increase in substrate temperature. The lower part of the microstructure has an amorphous structure. A nano grain structure (size ∼1 nm) with a random orientation is also observed above the amorphous structure. The fully dense columnar structure with an fcc crystal phase then starts to develop. Extreme hardness of around 48 GPa is obtained in the present alloy design.

Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates

International Nuclear Information System (INIS)

Guillén, C; Herrero, J

2008-01-01

Transparent and conductive indium tin oxide (ITO) films with thickness between 0.2 and 0.7 µm were deposited by sputtering at room temperature on glass and polyethylene terephthalate (PET) substrates. All films were polycrystalline, with crystallite size increasing and lattice distortion decreasing when the film thickness was increased. Besides, transmission in the near-infrared region is found to be decreasing and carrier concentration increasing when the film thickness was increased. For the same thickness, the lattice distortion is slightly lower and the carrier concentration higher for the layers grown on PET substrates. A direct relationship between the lattice distortion and the free carrier concentration has been established, applying to the films grown on glass and plastic substrates. By adjusting ITO coating thickness, sheet resistance below 15 Ω sq −1 and average visible transmittance about 90% have been achieved by sputtering at room temperature

Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films

International Nuclear Information System (INIS)

Bacaksiz, E.; Basol, B.M.; Altunbas, M.; Novruzov, V.; Yanmaz, E.; Nezir, S.

2007-01-01

The effects of substrate temperature and post-deposition heat treatment steps on the morphology, structural, optical and electrical properties of thin film CdTe layers grown by vacuum evaporation were investigated. Scanning electron microscopy and X-ray diffraction (XRD) techniques were employed to study the structural changes. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of - 173 deg. C and - 73 deg. C. However, CdTe films produced at a substrate temperature of 27 deg. C had substantially larger grain size and clearly facetted morphology. Annealing at 200-400 deg. C in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 400 deg. C reduced faceting in all cases and initiated fusing between grains. XRD studies showed that this behavior after annealing at 400 deg. C coincided with an onset of a degree of randomization in the originally strong (111) texture of the as-grown layers. Optical band gap measurements showed sharpening of the band-edge upon annealing at 400 deg. C and a band gap value in the range of 1.46-1.49 eV. Resistivity measurements indicated that annealing at 400 deg. C in air forms a highly resistive compensated CdTe film. All results point to 400 deg. C to be a critical annealing temperature at which optical, structural and electrical properties of CdTe layers start to change

Pd thin films on flexible substrate for hydrogen sensor

Energy Technology Data Exchange (ETDEWEB)

Öztürk, Sadullah [Fatih Sultan Mehmet Vakıf University, Engineering Faculty, Istanbul (Turkey); Kılınç, Necmettin, E-mail: nkilinc@nigde.edu.tr [Nigde University, Mechatronics Engineering Department, 51245 Nigde (Turkey); Nigde University, Nanotechnology Application and Research Center, 51245 Nigde (Turkey)

2016-07-25

In this work, palladium (Pd) thin films were prepared via RF sputtering method with various thicknesses (6 nm, 20 nm and 60 nm) on both a flexible substrate and a hard substrate. Hydrogen (H{sub 2}) sensing properties of Pd films on flexible substrate have been investigated depending on temperatures (25–100 °C) and H{sub 2} concentrations (600 ppm – 10%). The effect of H{sub 2} on structural properties of the films was also studied. The films were characterized by Scanning Electron Microscopy (SEM) and X-ray diffraction. It is found that whole Pd films on hard substrate show permanent structural deformation after exposed to 10% H{sub 2} for 30 min. But, this H{sub 2} exposure does not causes any structural deformation for 6 nm Pd film on flexible substrate and 6 nm Pd film on flexible substrate shows reversible sensor response up to 10% H{sub 2} concentration without any structural deformation. On the other hand, Pd film sensors that have the thicknesses 20 nm and 60 nm on flexible substrate are irreversible for higher H{sub 2} concentration (>2%) with film deformation. The sensor response of 6 nm Pd film on flexible substrate increased with increasing H{sub 2} concentration up 4% and then saturated. The sensitivity of the film decreased with increasing operation temperature. - Highlights: • Pd thin films fabricated by RF sputtering on both flexible and hard substrates. • Structural deformation observed for films on hard substrate after exposing 10% H{sub 2}. • 6 nm Pd film on flexible substrate shows reversible sensor response up to 10% H{sub 2}. • H{sub 2} sensing properties of film on flexible substrate investigated depending on temperature and concentration. • The sensitivity of the film decreased with increasing operation temperature.

Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission

International Nuclear Information System (INIS)

Liang, Y Y; Yoon, S F; Loke, W K; Ngo, C Y; Fitzgerald, E A

2012-01-01

GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is promising to integrate the InAs/InGaAs/GaAs QDs on Si with the use of germanium-on-insulator-on-silicon (GeOI) substrates, reported results exhibit bimodal QD sizes and double emission peaks, i.e. unsatisfactory for realistic applications. In this paper, we showed that with an optimized GaAs buffer, single-peak 1.33 µm room-temperature emission can be obtained from InAs/InGaAs/GaAs QDs on GeOI substrates. (paper)

Effect of RF power and substrate temperature on physical properties of Zr0.8Sn0.2TiO4 films by RF magnetron sputtering

International Nuclear Information System (INIS)

Hsu Cheng-Shing; Huang Cheng-Liang

2001-01-01

Physical properties of rf-sputtered crystalline (Zr 0.8 Sn 0.2 )TiO 4 (ZST) thin films deposited on n-type Si(100) substrates at different rf powers and substrate temperatures have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) were found to be sensitive to deposition conditions, such as rf power from 300 W to 400 W and substrate temperature (400degC, 450degC). Highly oriented ZST (111) and (002) perpendicular to the substrate surface were identified at a rf power of 400 W and a substrate temperature of 450degC. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. The leakage current decreased with increasing rf power and substrate temperature. As rf power = 400 W and substrate temperature = 450degC, a leakage current of 7.2x10 -11 A was obtained at 1 V. (author)

Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

International Nuclear Information System (INIS)

Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

2005-01-01

The (Ba, Sr) TiO 3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO 3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO 3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO 3 film deposited at higher temperatures (upwards of 400 deg. C) shows preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO 3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO 3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO 3 film on the ruthenium electrode at low temperatures of less than 400 deg. C

Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

Science.gov (United States)

Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

2005-05-01

The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

Temperature effects on kinetic parameters and substrate affinity of Cel7A cellobiohydrolases

DEFF Research Database (Denmark)

Sørensen, Trine Holst; Cruys-Bagger, Nicolaj; Windahl, Michael Skovbo

2015-01-01

Hypocrea jecorina and thermophilic Rasamsonia emersonii and two variants of these enzymes designed to elucidate the role of the carbohydrate binding module (CBM). We consistently found that the maximal rate increased strongly with temperature, whereas the affinity for the insoluble substrate decreased...... for affinity it slows down the catalytic process. Cel7A from the thermophilic organism was moderately more activated by temperature than the mesophilic analog. This is in accord with general theories on enzyme temperature adaptation and possibly relevant information for the selection of technical cellulases....

Effect of temperature and substrate on germination of Peltophorum dubium (Sprengel Taubert seeds - doi: 10.4025/actascibiolsci.v33i1.7057 Effect of temperature and substrate on germination of Peltophorum dubium (Sprengel Taubert seeds - doi: 10.4025/actascibiolsci.v33i1.7057

Directory of Open Access Journals (Sweden)

Mácio Faria de Moura

2011-02-01

Full Text Available Peltophorum dubium (Spreng. Taub. is a species belonging to the family Fabaceae, and is known popularly as golden shower tree. Its wood has multiple uses in reforestation programs and as an ornamental tree, and is also considered an endangered species, requiring studies that assist in its preservation. The present work was conducted with the objective of determine the ideal substrate type and temperature to perform germination and vigor tests with P. dubium seeds. The experiment was carried out at the Seed Analysis Laboratory (Centro de Ciências Agrárias, Universidade Federal Paraíba, Areia, Paraíba, Brazil, in a completely randomized design. The treatments were distributed in a 4 x 6 factorial scheme; temperatures (constant temperatures of 25, 30 and 35°C; and alternate temperatures of 20-30°C and substrate (paper towel, over blotting paper, in sand, in vermiculite, Bioplant® and Plantmax® on four replications of 25 seeds. The following parameters were analyzed: germination percentage, germination speed index, first germination count, length and dry mass of seedlings. The constant temperature of 30°C and 20-30°C alternate, and the substrates into sand and paper towel can be recommended for germination and vigor tests of P. dubium seeds. The temperature of 25°C should not be used in germination and vigor tests of P. dubium seeds in any of the tested substrates.Peltophorum dubium (Spreng. Taub. is a species belonging to the family Fabaceae, and is known popularly as golden shower tree. Its wood has multiple uses in reforestation programs and as an ornamental tree, and is also considered an endangered species, requiring studies that assist in its preservation. The present work was conducted with the objective of determine the ideal substrate type and temperature to perform germination and vigor tests with P. dubium seeds. The experiment was carried out at the Seed Analysis Laboratory (Centro de Ciências Agrárias, Universidade Federal

Reduced substrate supply limits the temperature response of soil organic carbon decomposition

Science.gov (United States)

Cinzia Fissore; Christian P. Giardina; Randall K. Kolka

2013-01-01

Controls on the decomposition rate of soil organic carbon (SOC), especially the more stable fraction of SOC, remain poorly understood, with implications for confidence in efforts to model terrestrial C balance under future climate. We investigated the role of substrate supply in the temperature sensitivity of SOC decomposition in laboratory incubations of coarse-...

Effect of substrate temperature on the optical parameters of thermally evaporated Ge-Se-Te thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Pankaj, E-mail: pks_phy@yahoo.co.i [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India); Katyal, S.C. [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India)

2009-05-01

Thin films of Ge{sub 10}Se{sub 90-x}Te{sub x} (x = 0, 10, 20, 30, 40, 50) glassy alloys were deposited at three substrate temperatures (303 K, 363 K and 423 K) using conventional thermal evaporation technique at base pressure of {approx} 10{sup -4} Pa. X-ray diffraction results show that films deposited at 303 K are of amorphous nature while films deposited at 363 K and 423 K are of polycrystalline nature. The optical parameters, refractive index and optical gap have been derived from the transmission spectra (using UV-Vis-NIR spectrophotometer) of the thin films in the spectral region 400-1500 nm. This has been observed that refractive index values remain almost constant while the optical gap is found to decrease considerably with the increase of substrate temperature. The decrease in optical gap is explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase of substrate temperature. The optical gap has also been observed to decrease with the increase of Te content.

Cladonia lichens on extensive green roofs: evapotranspiration, substrate temperature, and albedo [v1; ref status: indexed, http://f1000r.es/2ha

Directory of Open Access Journals (Sweden)

Amy Heim

2013-12-01

Full Text Available Green roofs are constructed ecosystems that provide ecosystem services in urban environments. Shallow substrate green roofs subject the vegetation layer to desiccation and other environmental extremes, so researchers have evaluated a variety of stress-tolerant vegetation types for green roof applications. Lichens can be found in most terrestrial habitats.  They are able to survive extremely harsh conditions, including frequent cycles of desiccation and rehydration, nutrient-poor soil, fluctuating temperatures, and high UV intensities. Extensive green roofs (substrate depth <20cm exhibit these harsh conditions, making lichens possible candidates for incorporation into the vegetation layer on extensive green roofs.  In a modular green roof system, we tested the effect of Cladonia lichens on substrate temperature, water loss, and albedo compared to a substrate-only control. Overall, the Cladonia modules had significantly cooler substrate temperatures during the summer and significantly warmer temperatures during the fall.  Additionally, the Cladonia modules lost significantly less water than the substrate-only control. This implies that they may be able to benefit neighboring vascular plant species by reducing water loss and maintaining favorable substrate temperatures.

Photoluminescence study of trap-state defect on TiO2 thin films at different substrate temperature via RF magnetron sputtering

Science.gov (United States)

Abdullah, S. A.; Sahdan, M. Z.; Nafarizal, N.; Saim, H.; Bakri, A. S.; Cik Rohaida, C. H.; Adriyanto, F.; Sari, Y.

2018-04-01

This paper highlights the defect levels using photoluminescence spectroscopy of TiO2 thin films. The TiO2 were deposited by Magnetron Sputtering system with 200, 300, 400, and 500 °C substrate temperature on microscope glass substrate. The PL result shows profound effect of various substrate temperatures to defect levels of oxygen vacancies and Ti3+ at titanium interstitial site. Increasing temperature would minimize the oxygen vacancy defect, however Ti3+ shows otherwise. Green region of PL consist of trapped hole for oxygen vacancy, while red region of PL is trapped electron associated to structural defect Ti3+. Green PL is dominant peak at temperature 200 °C, indicating that oxygen vacancy is the main defect at this temperature. However, PL peak shows slightly same value for others samples indicating that the temperature did not give high influence to other level of defect after 200 °C.

Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

Science.gov (United States)

Aikawa, Masaki; Onuki, Yuya; Hayasaka, Natsuki; Nishiyama, Tetsuo; Kamada, Naoki; Han, Xu; Kallarasan Periyanayagam, Gandhi; Uchida, Kazuki; Sugiyama, Hirokazu; Shimomura, Kazuhiko

2018-02-01

The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Schaffner, J., E-mail: jschaffner@surface.tu-darmstadt.de; Feldmeier, E.; Swirschuk, A.; Schimper, H.-J.; Klein, A.; Jaegermann, W.

2011-08-31

The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification.

Effect of substrate temperatures on the optical properties of evaporated Sc2O3 thin films

International Nuclear Information System (INIS)

Liu Guanghui; Jin Yunxia; He Hongbo; Fan Zhengxiu

2010-01-01

Scandium oxide (Sc 2 O 3 ) films were deposited by electron beam evaporation with substrate temperatures varying from 50 to 350 o C. X-ray diffraction, scanning electron microscopy, spectrometer, and optical profilograph were employed to investigate the structural and optical properties of the films. The refractive index and extinction coefficient were calculated from the transmittance and reflectance spectra, and then the energy band gaps were deduced and discussed. Laser induced damage threshold of the films were also characterized. Optical and structural properties of Sc 2 O 3 films were found to be sensitive to substrate temperature.

Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiNx Films at Low Substrate Temperatures

Science.gov (United States)

Heya, Akira; Niki, Toshikazu; Takano, Masahiro; Yonezawa, Yasuto; Minamikawa, Toshiharu; Muroi, Susumu; Minami, Shigehira; Izumi, Akira; Masuda, Atsushi; Umemoto, Hironobu; Matsumura, Hideki

2004-12-01

Highly moisture-resistive SiNx films on a Si substrate are obtained at substrate temperatures of 80°C by catalytic chemical vapor deposition (Cat-CVD) using a source gas with H2. Atomic hydrogen effected the selective etching of a weak-bond regions and an increase in atomic density induced by the energy of the surface reaction. It is concluded that Cat-CVD using H2 is a promising candidate for the fabrication of highly moisture-resistive SiNx films at low temperatures.

Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys

International Nuclear Information System (INIS)

Rajeswaran, G.; Kampas, F.J.; Vanier, P.E.; Sabatini, R.L.; Tafto, J.

1983-01-01

The glow-discharge decomposition of silane diluted in hydrogen using diborane as a dopant results in the deposition of p-type microcrystalline silicon films at relatively low temperatures. The conductivity of these films is critically dependent on the substrate temperature when the ratio of silane flow rate to total gas flow rate is 1%. Electron micrographs show that highly conducting films contain numerous clusters of 2.5-nm crystallites that are embedded in an amorphous medium

One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates.

Science.gov (United States)

Jiang, Shenglin; Zeng, Yike; Zhou, Wenli; Miao, Xiangshui; Yu, Yan

2016-01-14

Graphene deposited on various substrates has attracted the attention of the scientific and technical communities for use in a wide range of applications. Graphene on substrates is commonly produced by two types of methods, namely, methods that require a transfer step and transfer-free methods. Compared with methods that require a transfer step, transfer-free methods have a simpler procedure and a lower cost. Thus, transfer-free methods have considerable potential to meet the industrial and commercial demands of production methods. However, some limitations of the current transfer-free methods must be overcome, such as the high temperatures encountered during production, the relatively long manufacturing times, incompatibilities for both rigid and flexible substrates, and an inability to extend the process to other two-dimensional (2-D) atomic crystals. In this work, a room-temperature rubbing method is developed for the rapid transfer-free production of defect-free polycrystalline graphene on rigid and flexible substrates. Starting with inexpensive commercially obtained graphite powder, mono- and few-layer graphene can be fabricated directly on various substrates, with an average production time of less than one minute (from raw graphite to graphene on the substrate). Importantly, this method can be extended to other 2-D atomic crystals.

Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

Energy Technology Data Exchange (ETDEWEB)

Fedoseeva, Yu. V., E-mail: fedoseeva@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Pozdnyakov, G.A. [Khristianovich Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk 630090 (Russian Federation); Okotrub, A.V.; Kanygin, M.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nastaushev, Yu. V. [Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Vilkov, O.Y. [St. Petersburg State University, St. Petersburg 198504 (Russian Federation); Bulusheva, L.G. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

2016-11-01

Highlights: • A deposition of supersonic methane plasma flow on silicon substrate produces amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) film. • The thickness, composition, and wettability of the film depend on the substrate temperature. • A rise of the substrate temperature from 500 to 700 °C promotes the sp{sup 3}-hybridization carbon formation. - Abstract: Since amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of CO{sub x}H{sub y} films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the CO{sub x}H{sub y} films, deposited at 300 and 500 °C, were mainly composed of the sp{sup 2}-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

Differences in structure and magnetic behavior of Mn-AlN films due to substrate material

International Nuclear Information System (INIS)

Sato, Takanobu; Nakatani, Ryoichi; Endo, Yasushi; Kirino, Fumiyoshi

2009-01-01

The structure and magnetic behavior of Mn-AlN (Al 1-x Mn x N, x = 0.03, 0.04) films deposited on thermally oxidized Si (001) substrates and sapphire (0001) substrates were studied. Mn-AlN films deposited on each substrate had a wuertzite-type AlN phase with a preferentially oriented c-axis. Mn-AlN films that were deposited on Si (001) substrate exhibited paramagnetic behavior. In addition to paramagnetic behavior, weak ferromagnetic behavior with curie temperatures higher than room temperature were observed for Mn-AlN films deposited on sapphire (0001) substrates.

TiO2 Nanotubes on Transparent Substrates: Control of Film Microstructure and Photoelectrochemical Water Splitting Performance

Directory of Open Access Journals (Sweden)

Matus Zelny

2018-01-01

Full Text Available Transfer of semiconductor thin films on transparent and or flexible substrates is a highly desirable process to enable photonic, catalytic, and sensing technologies. A promising approach to fabricate nanostructured TiO2 films on transparent substrates is self-ordering by anodizing of thin metal films on fluorine-doped tin oxide (FTO. Here, we report pulsed direct current (DC magnetron sputtering for the deposition of titanium thin films on conductive glass substrates at temperatures ranging from room temperature to 450 °C. We describe in detail the influence that deposition temperature has on mechanical, adhesion and microstructural properties of titanium film, as well as on the corresponding TiO2 nanotube array obtained after anodization and annealing. Finally, we measure the photoelectrochemical water splitting activity of different TiO2 nanotube samples showing that the film deposited at 150 °C has much higher activity correlating well with the lower crystallite size and the higher degree of self-organization observed in comparison with the nanotubes obtained at different temperatures. Importantly, the film showing higher water splitting activity does not have the best adhesion on glass substrate, highlighting an important trade-off for future optimization.

Temperature measurement in low pressure plasmas. Temperaturmessungen im Niederdruckplasma

Energy Technology Data Exchange (ETDEWEB)

Rosenbauer, K.A.; Wilting, H.; Schramm, G. (Duesseldorf Univ. (Germany, F.R.). Abt. fuer Histologie und Embryologie)

1989-11-01

The present work discusses the influence of various parameters on the substrate temperature in a low pressure plasma. The measurement method chosen utilized Signotherm (Merck) temperature sensors embedded in silicon between two glass substrates. All measurements were made in a 200 G Plasma Processor from Technics Plasma GmbH. The substrate temperature is dependent on the process time, the RF power, the process gas and the position in the chamber. The substrate temperature increases with increasing process time and increasing power. Due to the location of the microwave port from the magnetron to the chamber, the substrate temperature is highest in the center of the chamber. Measurements performed in an air plasma yielded higher results than in an oxygen plasma. (orig.).

Effect of substrate temperature on thermochromic vanadium dioxide thin films sputtered from vanadium target

Science.gov (United States)

Madiba, I. G.; Kotsedi, L.; Ngom, B. D.; Khanyile, B. S.; Maaza, M.

2018-05-01

Vanadium dioxide films have been known as the most promising thermochromic thin films for smart windows which self-control the solar radiation and heat transfer for energy saving, comfort in houses and automotives. Such an attractive technological application is due to the fact that vanadium dioxide crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature Tc of about 68 °C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated with the nature of the microstructure, stoichiometry and stresses related to the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of vanadium dioxide thin films synthesized by reactive radio frequency inverted cylindrical magnetron sputtering from vanadium target. The reports results are based on X-ray diffraction, Atomic force microscopy, and UV-Visible spectrophotometer. The average crystalline grain size of VO2 increases with the substrate temperature, inducing stress related phenomena within the films.

Cladonia lichens on extensive green roofs: evapotranspiration, substrate temperature, and albedo [v2; ref status: indexed, http://f1000r.es/2v4

Directory of Open Access Journals (Sweden)

Amy Heim

2014-01-01

Full Text Available Green roofs are constructed ecosystems that provide ecosystem services in urban environments. Shallow substrate green roofs subject the vegetation layer to desiccation and other environmental extremes, so researchers have evaluated a variety of stress-tolerant vegetation types for green roof applications. Lichens can be found in most terrestrial habitats.  They are able to survive extremely harsh conditions, including frequent cycles of desiccation and rehydration, nutrient-poor soil, fluctuating temperatures, and high UV intensities. Extensive green roofs (substrate depth <20cm exhibit these harsh conditions, making lichens possible candidates for incorporation into the vegetation layer on extensive green roofs.  In a modular green roof system, we tested the effect of Cladonia lichens on substrate temperature, water loss, and albedo compared to a substrate-only control. Overall, the Cladonia modules had significantly cooler substrate temperatures during the summer and significantly warmer temperatures during the fall.  Additionally, the Cladonia modules lost significantly less water than the substrate-only control. This implies that they may be able to benefit neighboring vascular plant species by reducing water loss and maintaining favorable substrate temperatures.

Preparation of MgO Films as Buffer Layers by Laser-ablation at Various Substrate Temperatures

Institute of Scientific and Technical Information of China (English)

LI Ling; WANG Chuanbin; WANG Fang; SHEN Qiang; ZHANG Lianmeng

2011-01-01

MgO thin films were deposited on Si(100) substrates by laser ablation under various substrate temperatures (Tsub),expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from (200) to (111).The crystallinity and surface morphology was different too,depending on Tsub·At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.

Pulsed laser deposition of SiC thin films at medium substrate temperatures

International Nuclear Information System (INIS)

Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

2008-01-01

Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition

CERN Document Server

Li Peng; Mazumder, J

2003-01-01

Room temperature deposition of biaxially textured yttria-stabilized zirconia (YSZ) films on amorphous glass substrates was successfully achieved by conventional pulsed-laser deposition. The influence of the surrounding gases, their pressure and the deposition time on the structure of the films was studied. A columnar growth process was revealed based on the experimental results. The grown biaxial texture appears as a kind of substrate independence, which makes it possible to fabricate in-plane aligned YSZ films on various substrates.

F-doped SnO2 thin films grown on flexible substrates at low temperatures by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, H.; Auyeung, R.C.Y.; Pique, A.

2011-01-01

Fluorine-doped tin oxide (SnO 2 :F) films were deposited on polyethersulfone plastic substrates by pulsed laser deposition. The electrical and optical properties of the SnO 2 :F films were investigated as a function of deposition conditions such as substrate temperature and oxygen partial pressure during deposition. High quality SnO 2 :F films were achieved under an optimum oxygen pressure range (7.4-8 Pa) at relatively low growth temperatures (25-150 deg. C). As-deposited films exhibited low electrical resistivities of 1-7 mΩ-cm, high optical transmittance of 80-90% in the visible range, and optical band-gap energies of 3.87-3.96 eV. Atomic force microscopy measurements revealed a reduced root mean square surface roughness of the SnO 2 :F films compared to that of the bare substrates indicating planarization of the underlying substrate.

Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B., E-mail: galiev-galib@mail.ru [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Kitaeva, G. Kh. [Moscow State University, Faculty of Physics (Russian Federation); Klimov, E. A.; Klochkov, A. N. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Kolentsova, O. S. [National Research Nuclear University “MEPhI” (Russian Federation); Kornienko, V. V.; Kuznetsov, K. A. [Moscow State University, Faculty of Physics (Russian Federation); Maltsev, P. P.; Pushkarev, S. S. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)

2017-03-15

The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

Effects of Annealing Temperature on Properties of Ti-Ga-Doped ZnO Films Deposited on Flexible Substrates.

Science.gov (United States)

Chen, Tao-Hsing; Chen, Ting-You

2015-11-03

An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga-doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

Biochar increases plant growth and alters microbial communities via regulating the moisture and temperature of green roof substrates.

Science.gov (United States)

Chen, Haoming; Ma, Jinyi; Wei, Jiaxing; Gong, Xin; Yu, Xichen; Guo, Hui; Zhao, Yanwen

2018-09-01

Green roofs have increasingly been designed and applied to relieve environmental problems, such as water loss, air pollution as well as heat island effect. Substrate and vegetation are important components of green roofs providing ecosystem services and benefiting the urban development. Biochar made from sewage sludge could be potentially used as the substrate amendment for green roofs, however, the effects of biochar on substrate quality and plant performance in green roofs are still unclear. We evaluated the effects of adding sludge biochar (0, 5, 10, 15 and 20%, v/v) to natural soil planted with three types of plant species (ryegrass, Sedum lineare and cucumber) on soil properties, plant growth and microbial communities in both green roof and ground ecosystems. Our results showed that sludge biochar addition significantly increased substrate moisture, adjusted substrate temperature, altered microbial community structure and increased plant growth. The application rate of 10-15% sludge biochar on the green roof exerted the most significant effects on both microbial and plant biomass by 63.9-89.6% and 54.0-54.2% respectively. Path analysis showed that biochar addition had a strong effect on microbial biomass via changing the soil air-filled porosity, soil moisture and temperature, and promoted plant growth through the positive effects on microbial biomass. These results suggest that the applications of biochar at an appropriate rate can significantly alter plant growth and microbial community structure, and increase the ecological benefits of green roofs via exerting effects on the moisture, temperature and nutrients of roof substrates. Copyright © 2018 Elsevier B.V. All rights reserved.

Investigation of high temperature reactions on solid substrates with Rutherford backscattering spectrometry: interaction of palladium with selenium on heated graphite surfaces

International Nuclear Information System (INIS)

Majidi, V.; Robertson, J.D.

1991-01-01

Selenium and palladium interactions on heated pyrolytically coated graphite substrates were investigated using Rutherford backscattering spectrometry. The studies were performed using selenium alone, palladium alone, and a combination of selenium and palladium deposited on the graphite substrates. The results indicate that palladium instantaneously stabilizes selenium at ambient temperatures and prevents the diffusion of selenium into the graphite. As the substrate is heated, temperature dependent diffusion of all analytes into the graphite is observed. Furthermore, it appears that the stabilization of selenium is due to the formation of a stoichiometric compound with palladium and oxygen. This compound decomposes at a temperature between 1070 and 1770 K. (author)

Investigation of high temperature reactions on solid substrates with Rutherford backscattering spectrometry: interaction of palladium with selenium on heated graphite surfaces

Energy Technology Data Exchange (ETDEWEB)

Majidi, V.; Robertson, J.D. (Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry)

1991-01-01

Selenium and palladium interactions on heated pyrolytically coated graphite substrates were investigated using Rutherford backscattering spectrometry. The studies were performed using selenium alone, palladium alone, and a combination of selenium and palladium deposited on the graphite substrates. The results indicate that palladium instantaneously stabilizes selenium at ambient temperatures and prevents the diffusion of selenium into the graphite. As the substrate is heated, temperature dependent diffusion of all analytes into the graphite is observed. Furthermore, it appears that the stabilization of selenium is due to the formation of a stoichiometric compound with palladium and oxygen. This compound decomposes at a temperature between 1070 and 1770 K. (author).

Room temperature deposition of perpendicular magnetic anisotropic Co{sub 3}Pt thin films on glass substrate

Energy Technology Data Exchange (ETDEWEB)

Chen, Yu-Shen; Dai, Hong-Yu; Hsu, Yi-Wei [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China); Ou, Sin-Liang, E-mail: slo@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan (China); Chen, Shi-Wei [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300, Taiwan (China); Lu, Hsi-Chuan; Wang, Sea-Fue [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China); Sun, An-Cheng, E-mail: acsun@saturn.yzu.edu.tw [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China)

2017-03-01

Co{sub 3}Pt alloy thin films were deposited on the glass substrate at room temperature (RT) and 300 °C, which showed high perpendicular magnetic anisotropy (PMA) and isotropy magnetic behaviors, respectively. Co{sub 3}Pt HCP (0002) planes grew along the substrate plane for the films deposited at RT. The easy axis [0001] was consequently vertical to the substrate surface and obtained the predominant PMA. Large magnetic domains and sharp boundary also supported high PMA in RT-deposited samples. On the other hand, the PMA was significantly decreased with increasing the deposition temperature from RT to 300 °C. Hard HCP(0002) and soft A1(111) co-existed in the film and the magnetic exchanged coupling between these two phases induced isotropy magnetic behavior. In addition, the various thicknesses (t) of the RT-deposited Co{sub 3}Pt films were deposited with different base pressures prior to sputtering. The Kerr rotation loops showed high PMA and out-of-plane squareness (S{sub ⊥}) of ~0.9 were found in low base pressure chamber. Within high base pressure chamber, Co{sub 3}Pt films just show magnetic isotropy behaviors. This study provides a fabrication method for the preparation of high PMA HCP-type Co{sub 3}Pt films on the glass substrate without any underlayer at RT. The results could be the base for future development of RT-deposited magnetic alloy thin film with high PMA. - Highlights: • Fabricated high perpendicular magnetic anisotropy Co{sub 3}Pt thin film on glass substrate. • Prepared HCP Co{sub 3}Pt thin film at room temperature. • The key to enhance the PMA of the Co{sub 3}Pt films. • Thinner film is good to fabricate PMA Co{sub 3}Pt thin films.

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

Science.gov (United States)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

Science.gov (United States)

Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

2016-02-10

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

The effect of substrate texture and oxidation temperature on oxide texture development in zirconium alloys

Energy Technology Data Exchange (ETDEWEB)

Garner, A., E-mail: alistair.garner@manchester.ac.uk [Materials Performance Centre, University of Manchester, Grosvenor Street, Manchester, M17HS (United Kingdom); Frankel, P. [Materials Performance Centre, University of Manchester, Grosvenor Street, Manchester, M17HS (United Kingdom); Partezana, J. [Westinghouse Electric Company, 1332 Beulah Road, Pittsburgh, PA 15235 (United States); Preuss, M. [Materials Performance Centre, University of Manchester, Grosvenor Street, Manchester, M17HS (United Kingdom)

2017-02-15

During corrosion of zirconium alloys a highly textured oxide is formed, the degree of this preferred orientation has previously been shown to be an important factor in determining the corrosion behaviour of these alloys. Two distinct experiments were designed in order to investigate the origin of this oxide texture development on two commercial alloys. Firstly, sheet samples of Zircaloy-4 were oxidised between 500 and 800 °C in air. The resulting monoclinic oxide texture strength was observed to decrease with increasing oxidation temperature. In a second experiment, orthogonal faces of Low Tin ZIRLO{sub ™} were oxidised in 360 °C water, providing different substrate textures but identical microstructures. The substrate texture was observed to have a negligible effect on the corrosion performance whilst the major orientation of both oxide phases was found to be independent of substrate orientation. It is concluded that the main driving force for oxide texture development in single-phase zirconium alloys is the compressive stress caused by the Zr−ZrO{sub 2} transformation. - Highlights: • Substrate orientation does not significantly affect oxide texture development. • Corrosion performance is independent of substrate texture. • Monoclinic oxide texture strength decreases with increasing oxidation temperature. • The main driving force for texture development is the oxidation-induced stress.

Role of substrate and annealing temperature on the structure of ZnO and Al{sub x}Zn{sub 1−x}O thin films for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Nambala, Fred Joe [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Department of Physics, University of Zambia, PO Box 32379, Great East Road Campus, Lusaka (Zambia); Nel, Jacqueline M.; Machatine, Augusto G.J. [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Mwakikunga, Bonex W. [DST/CSIR National Centre for Nano-Structured Materials, PO Box 395, Pretoria (South Africa); Njoroge, Eric G. [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Maabong, Kelebogile [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Physics Department, University of Botswana, Private Bag 0022, Gaborone (Botswana); Das, Arran G.M. [Monash University, Private Bag X60, Roodepoort 1725 (South Africa); Diale, Mmantsae, E-mail: mmantsae.diale@up.ac.za [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa)

2016-01-01

This paper reports on the deposition of pure and 5 at% Al doped ZnO (AZO) prepared by sol–gel and applied to the substrates by spin-coating, and the role of annealing temperature on the crystallinity of these layers. It is found that both ZnO and AZO are largely amorphous when coated on glass compared to n-Si(111), as substrates. On both substrates, X-ray diffraction (XRD) shows that the crystallinity improves as annealing temperature is raised from 200 to 600 °C with better crystallinity on Si substrates. The thickness of the films on substrates was determined as 120 nm by Rutherford backscattering spectroscopy (RBS). Specular ultra-violet visible (UV–vis) gives the direct transition optical band gaps (E{sub g}) for AZO as-deposited films are 2.60 and 3.35 eV while that of 600 °C annealed films are 3.00 and 3.60 eV. The E{sub g} calculated from diffuse reflectance spectroscopy (DRS) UV–vis are more diverse in ZnO- and AZO-Si than the ZnO- and AZO-glass samples, although in both sets the E{sub g} tend to converge after annealing 600 °C. The Raman spectra of samples show multiphonon processes of higher order from the AZO and substrates. It is found that residual stresses are related to E{sub 2} Raman mode.

Laboratory Study of the Influence of Substrate Type and Temperature on the Exploratory Tunneling by Formosan Subterranean Termite

Directory of Open Access Journals (Sweden)

Bal K. Gautam

2012-06-01

Full Text Available Using two-dimensional foraging arenas, laboratory tests were conducted to investigate the effect of soil type, soil moisture level and ambient temperature on the exploratory tunneling by Coptotermes formosanus Shiraki. In choice arenas consisting of two substrate types having two moisture levels each, and conducted at a constant temperature of 22 °C, a significantly greater proportion of termites aggregated in sand than in sandy loam. Similarly, the length of excavated tunnels was also increased in sand. In a given substrate, termite aggregation or tunnel length did not differ between 5% and 15% moisture levels. In no-choice tests, where three different substrates (sand, sandy loam and silt loam were tested at two temperatures (22 °C and 28 °C, excavations were significantly greater in sand than either sandy loam or silt loam at 22 °C. Fewer primary tunnels were constructed in sandy loam than in sand and fewer branched tunnels than either in sand or silt loam. No significant difference in either tunnel length or number of primary or branched tunnels was found between these two temperatures.

The effects of beam energy and substrate temperature on the tribological properties of hard-carbon films on aluminum

International Nuclear Information System (INIS)

Wei, R.; Wilbur, P.J.; Erdemir, A.; Kustas, F.M.

1992-01-01

Hard-carbon films were applied on flat 6061-T6 aluminum substrates using a broad-beam ion source operating on methane and producing carbonaceous ions with energies that varied from 250 to 1050 eV. Films were evaluated using a reciprocating alumina ball-on-flat sliding wear tester operating in an ambient air test environment. The films facilitated substantial reductions in friction coefficients to 0.08-0.2 from 0.4-0.7 for uncoated aluminum. At a sufficiently high normal load, the films failed and friction coefficients increased to the higher range. The best film caused this critical normal load to increase from less than 0.1 N for untreated aluminum to greater than 30 N. A near-optimal beam ion energy (450 eV) was identified for good quality films. At lower energies (e.g. 250 eV) films were discontinuous, while at higher energies (e.g. 1050 eV) high sputter rates limited film growth. When an aluminum flat was held at low temperature during processing, the films were smooth and adhered well, but they became rougher and adhered poorly as the temperature was increased above approximately 300degC. (orig.)

Do circadian genes and ambient temperature affect substrate-borne signalling during Drosophila courtship?

Directory of Open Access Journals (Sweden)

Izarne Medina

2015-11-01

Full Text Available Courtship vibratory signals can be air-borne or substrate-borne. They convey distinct and species-specific information from one individual to its prospective partner. Here, we study the substrate-borne vibratory signals generated by the abdominal quivers of the Drosophila male during courtship; these vibrations travel through the ground towards courted females and coincide with female immobility. It is not known which physical parameters of the vibrations encode the information that is received by the females and induces them to pause. We examined the intervals between each vibratory pulse, a feature that was reported to carry information for animal communication. We were unable to find evidence of periodic variations in the lengths of these intervals, as has been reported for fly acoustical signals. Because it was suggested that the genes involved in the circadian clock may also regulate shorter rhythms, we search for effects of period on the interval lengths. Males that are mutant for the period gene produced vibrations with significantly altered interpulse intervals; also, treating wild type males with constant light results in similar alterations to the interpulse intervals. Our results suggest that both the clock and light/dark cycles have input into the interpulse intervals of these vibrations. We wondered if we could alter the interpulse intervals by other means, and found that ambient temperature also had a strong effect. However, behavioural analysis suggests that only extreme ambient temperatures can affect the strong correlation between female immobility and substrate-borne vibrations.

Effect of substrate preheating temperature and coating thickness on residual stress in plasma sprayed hydroxyapatite coating

International Nuclear Information System (INIS)

Tang, Dapei

2015-01-01

A thermal-mechanical coupling model was developed based on thermal-elastic- plastic theory according the special process of plasma spraying Hydroxyapatite (HA) coating upon Ti-6Al-4V substrate. On the one hand, the classical Fourier transient heat conduction equation was modified by introducing the effect item of deformation on temperature, on the other hand, the Johnson-Cook model, suitable for high temperature and high strain rate conditions, was used as constitutive equation after considering temperature softening effect, strain hardening effect and strain rate reinforcement effect. Based on the above coupling model, the residual stress field within the HA coating was simulated by using finite element method (FEM). Meanwhile, the substrate preheating temperature and coating thickness on the influence of residual stress components were calculated, respectively. The failure modes of coating were also preliminary analyzed. In addition, in order to verify the reliability of calculation, the material removal measurement technique was applied to determine the residual stress of HA coating near the interface. Some important conclusions are obtained. (paper)

Temperature dependence of critical current and transport current losses of 4 mm YBCO coated conductors manufactured using nonmagnetic substrate

Science.gov (United States)

Kvitkovic, J.; Hatwar, R.; Pamidi, S. V.; Fleshler, S.; Thieme, C.

2015-12-01

The temperature dependence of the critical current and AC losses were measured on American Superconductor Corporation's (AMSC) second generation high temperature superconducting (2G HTS) wire produced by Rolling Assisted Biaxially Textured Substrate (RABiTS) and Metal Organic Deposition (MOD) process. Wires manufactured with two types of substrates were characterized. The magnetic substrate with composition Ni5a%W exhibits a magnetic signature and has non-negligible AC losses in AC power applications. A new nonmagnetic substrate with an alloy composition Ni9a%W has been developed by AMSC to address the AC losses in 2G HTS. The data presented show that the performance of the new conductor is identical to the conductor with magnetic substrate in terms of critical current density. The data on AC losses demonstrate the absence of ferromagnetic loss component in the new conductor and significantly reduced AC losses at low to moderate values of I/Ic. The reduced losses will translate into reduced capital costs and lower operating costs of superconducting electrical devices for AC applications.

Novel low-temperature sintering ceramic substrate based on indialite/cordierite glass ceramics

Science.gov (United States)

Varghese, Jobin; Vahera, Timo; Ohsato, Hitoshi; Iwata, Makoto; Jantunen, Heli

2017-10-01

In this paper, a novel low-temperature sintering substrate for low temperature co-fired ceramic applications based on indialite/cordierite glass ceramics with Bi2O3 as a sintering aid showing low permittivity (εr) and ultralow dielectric loss (tan δ) is described. The fine powder of indialite was prepared by the crystallization of cordierite glass at 1000 °C/1 h. The optimized sintering temperature was 900 °C with 10 wt % Bi2O3 addition. The relative density achieved was 97%, and εr and tan δ were 6.10 and 0.0001 at 1 MHz, respectively. The composition also showed a moderately low temperature coefficient of relative permittivity of 118 ppm/°C at 1 MHz. The obtained linear coefficient of thermal expansion was 3.5 ppm/°C in the measured temperature range of 100 to 600 °C. The decreasing trend in dielectric loss, the low relative permittivity at 1 MHz, and the low thermal expansion of the newly developed composition make it an ideal choice for radio frequency applications.

Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

Directory of Open Access Journals (Sweden)

Samia Ahmed Nadi

2014-01-01

Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

Structure of photosystem II and substrate binding at room temperature.

Science.gov (United States)

Young, Iris D; Ibrahim, Mohamed; Chatterjee, Ruchira; Gul, Sheraz; Fuller, Franklin; Koroidov, Sergey; Brewster, Aaron S; Tran, Rosalie; Alonso-Mori, Roberto; Kroll, Thomas; Michels-Clark, Tara; Laksmono, Hartawan; Sierra, Raymond G; Stan, Claudiu A; Hussein, Rana; Zhang, Miao; Douthit, Lacey; Kubin, Markus; de Lichtenberg, Casper; Long Vo, Pham; Nilsson, Håkan; Cheah, Mun Hon; Shevela, Dmitriy; Saracini, Claudio; Bean, Mackenzie A; Seuffert, Ina; Sokaras, Dimosthenis; Weng, Tsu-Chien; Pastor, Ernest; Weninger, Clemens; Fransson, Thomas; Lassalle, Louise; Bräuer, Philipp; Aller, Pierre; Docker, Peter T; Andi, Babak; Orville, Allen M; Glownia, James M; Nelson, Silke; Sikorski, Marcin; Zhu, Diling; Hunter, Mark S; Lane, Thomas J; Aquila, Andy; Koglin, Jason E; Robinson, Joseph; Liang, Mengning; Boutet, Sébastien; Lyubimov, Artem Y; Uervirojnangkoorn, Monarin; Moriarty, Nigel W; Liebschner, Dorothee; Afonine, Pavel V; Waterman, David G; Evans, Gwyndaf; Wernet, Philippe; Dobbek, Holger; Weis, William I; Brunger, Axel T; Zwart, Petrus H; Adams, Paul D; Zouni, Athina; Messinger, Johannes; Bergmann, Uwe; Sauter, Nicholas K; Kern, Jan; Yachandra, Vittal K; Yano, Junko

2016-12-15

Light-induced oxidation of water by photosystem II (PS II) in plants, algae and cyanobacteria has generated most of the dioxygen in the atmosphere. PS II, a membrane-bound multi-subunit pigment protein complex, couples the one-electron photochemistry at the reaction centre with the four-electron redox chemistry of water oxidation at the Mn 4 CaO 5 cluster in the oxygen-evolving complex (OEC). Under illumination, the OEC cycles through five intermediate S-states (S 0 to S 4 ), in which S 1 is the dark-stable state and S 3 is the last semi-stable state before O-O bond formation and O 2 evolution. A detailed understanding of the O-O bond formation mechanism remains a challenge, and will require elucidation of both the structures of the OEC in the different S-states and the binding of the two substrate waters to the catalytic site. Here we report the use of femtosecond pulses from an X-ray free electron laser (XFEL) to obtain damage-free, room temperature structures of dark-adapted (S 1 ), two-flash illuminated (2F; S 3 -enriched), and ammonia-bound two-flash illuminated (2F-NH 3 ; S 3 -enriched) PS II. Although the recent 1.95 Å resolution structure of PS II at cryogenic temperature using an XFEL provided a damage-free view of the S 1 state, measurements at room temperature are required to study the structural landscape of proteins under functional conditions, and also for in situ advancement of the S-states. To investigate the water-binding site(s), ammonia, a water analogue, has been used as a marker, as it binds to the Mn 4 CaO 5 cluster in the S 2 and S 3 states. Since the ammonia-bound OEC is active, the ammonia-binding Mn site is not a substrate water site. This approach, together with a comparison of the native dark and 2F states, is used to discriminate between proposed O-O bond formation mechanisms.

Tungsten as a Chemically-Stable Electrode Material on Ga-Containing Piezoelectric Substrates Langasite and Catangasite for High-Temperature SAW Devices

Directory of Open Access Journals (Sweden)

Gayatri K. Rane

2016-02-01

Full Text Available Thin films of tungsten on piezoelectric substrates La3Ga5SiO14 (LGS and Ca3TaGa3Si2O14 (CTGS have been investigated as a potential new electrode material for interdigital transducers for surface acoustic wave-based sensor devices operating at high temperatures up to 800 °C under vacuum conditions. Although LGS is considered to be suitable for high-temperature applications, it undergoes chemical and structural transformation upon vacuum annealing due to diffusion of gallium and oxygen. This can alter the device properties depending on the electrode nature, the annealing temperature, and the duration of the application. Our studies present evidence for the chemical stability of W on these substrates against the diffusion of Ga/O from the substrate into the film, even upon annealing up to 800 °C under vacuum conditions using Auger electron spectroscopy and energy-dispersive X-ray spectroscopy, along with local studies using transmission electron microscopy. Additionally, the use of CTGS as a more stable substrate for such applications is indicated.

Effect of substrate temperature on the microstructural properties of titanium nitride nanowires grown by pulsed laser deposition

International Nuclear Information System (INIS)

Gbordzoe, S.; Kotoka, R.; Craven, Eric; Kumar, D.; Wu, F.; Narayan, J.

2014-01-01

The current work reports on the growth and microstructural characterization of titanium nitride (TiN) nanowires on single crystal silicon substrates using a pulsed laser deposition method. The physical and microstructural properties of the nanowires were characterized using field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The corrosion properties of the TiN nanowires compared to TiN thin film were evaluated using Direct Current potentiodynamic and electrochemical impedance spectroscopy. The nanowires corroded faster than the TiN thin film, because the nanowires have a larger surface area which makes them more reactive in a corrosive environment. It was observed from the FESEM image analyses that as the substrate temperature increases from 600 °C to 800 °C, there was an increase in both diameter (25 nm–50 nm) and length (150 nm–250 nm) of the nanowire growth. There was also an increase in spatial density with an increase of substrate temperature. The TEM results showed that the TiN nanowires grow epitaxially with the silicon substrate via domain matching epitaxy paradigm, despite a large misfit

Structural, optical and electrical characteristics of ITO thin films deposited by sputtering on different polyester substrates

International Nuclear Information System (INIS)

Guillen, C.; Herrero, J.

2008-01-01

Indium tin oxide (ITO) thin films were deposited by sputtering at room temperature on glass and different polyester substrates; namely polyarylate (PA), polycarbonate (PC) and polyethylene terephtalate (PET). The influence of the substrate on the structural, optical and electrical characteristics of the ITO layers was investigated. The sputtered films exhibited crystallization in the (2 2 2) orientation, with higher mean crystallite size and lower structural distortion onto PET than onto PA, PC or glass substrates. ITO films deposited onto PET showed also higher band gap energy, higher carrier concentration and lower resistivity than the ITO layers onto the other tested substrates. These optical and electrical characteristics have been related to the structural distortion that was found dependent on the specific polyester substrate

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Energy Technology Data Exchange (ETDEWEB)

Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

2015-07-28

Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

The influence of substrate temperature on properties of APS and VPS W coatings

Czech Academy of Sciences Publication Activity Database

Kovářík, O.; Haušild, P.; Siegl, J.; Chráska, Tomáš; Matějíček, Jiří; Pala, Zdeněk; Boulos, M.

2015-01-01

Roč. 268, April (2015), s. 7-14 ISSN 0257-8972 R&D Projects: GA ČR(CZ) GAP108/12/1872 Institutional support: RVO:61389021 Keywords : Plasma spray * Substrate temperature * W * Hardness * Coating modulus * Thermal conductivity Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 2.139, year: 2015 http://www.sciencedirect.com/science/article/pii/S0257897214006409#

Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

Science.gov (United States)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2013-09-01

Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

Dormancy overcoming, temperatures and substrates on germination of Mimosa tenuiflora Willd seeds

Directory of Open Access Journals (Sweden)

Clarisse Pereira Benedito

2017-03-01

Full Text Available Mimosa tenuiflora Willd., popularly known as jurema-preta, is an arboreal species of great importance for the brazilian Northeast due to its uses as a medicinal plant and in the restoration of degraded soils. No information is available in the Rules for Seed Analysis and the Instructions for Seed Analysis of Forest Species regarding ideal conditions for of this species. Thus, this study aimed at evaluating the influence of pre-germination treatments, in addition to verifying the germination performance at different temperatures and in different substrates. In both experiments, four replicates of 25 seeds were used for each treatment. In experiment I, seeds were submitted to the following methods for overcoming dormancy: witness - Intact seeds (T1 immersion in water at 100 °C for 1 (T2, 2 (T3, 3 (T4, 4 (T5, 5 (T6 and 6 min (T7, immersion in concentrated sulfuric acid for 1 (T8, 4 (T9, 7 (T10, 10 (T11 and 13 min (T12, scarification on sandpaper n° 80 (T13 and lopping in the region opposite the micropyle (T14. In experiment II, seed germination was evaluated in four types of substrates: between sand, paper on, paper roll and between vermiculite and at six different temperatures: 20, 25, 30, 35, 40 °C and alternating between 20 and 30 °C. Immersion in hot water for 1, 2, 3, 4, 5 and 6 min, sulfuric acid treatment for 10 and 13 min, sand paper and lopping were the most appropriate treatments to overcome seed dormancy. The seed germination of M. Tenuiflora should be carried out at 25 °C on paper roll substrate.

Data on the detail information of influence of substrate temperature on the film morphology and photovoltaic performance of non-fullerene organic solar cells.

Science.gov (United States)

Zhang, Jicheng; Xie, SuFei; Lu, Zhen; Wu, Yang; Xiao, Hongmei; Zhang, Xuejuan; Li, Guangwu; Li, Cuihong; Chen, Xuebo; Ma, Wei; Bo, Zhishan

2017-10-01

This data contains additional data related to the article "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" (Jicheng Zhang et al., In press) [1]. Data include measurement and characterization instruments and condition, detail condition to fabricate norfullerene solar cell devices, hole-only and electron-only devices. Detail condition about how to control the film morphology of devices via tuning the temperature of substrates was also displayed. More information and more convincing data about the change of film morphology for active layers fabricated from different temperature, which is attached to the research article of "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" was given.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

Science.gov (United States)

Lakshmanan, Saravanan; Rao, Subha Krishna; Muthuvel, Manivel Raja; Chandrasekaran, Gopalakrishnan; Therese, Helen Annal

2017-08-01

Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (Ts) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (Ms) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

Plastic substrates for active matrix liquid crystal display incapable of withstanding processing temperature of over 200 C and method of fabrication

Energy Technology Data Exchange (ETDEWEB)

Carey, P.G.; Smith, P.M.; Havens, J.H.; Jones, P.

1999-01-05

Bright-polarizer-free, active-matrix liquid crystal displays (AMLCDs) are formed on plastic substrates. The primary components of the display are a pixel circuit fabricated on one plastic substrate, an intervening liquid-crystal material, and a counter electrode on a second plastic substrate. The-pixel circuit contains one or more thin-film transistors (TFTs) and either a transparent or reflective pixel electrode manufactured at sufficiently low temperatures to avoid damage to the plastic substrate. Fabrication of the TFTs can be carried out at temperatures less than 100 C. The liquid crystal material is a commercially made nematic curvilinear aligned phase (NCAP) film. The counter electrode is comprised of a plastic substrate coated with a transparent conductor, such as indium-doped tin oxide (ITO). By coupling the active matrix with NCAP, a high-information content can be provided in a bright, fully plastic package. Applications include any low cost portable electronics containing flat displays where ruggedization of the display is desired. 12 figs.

Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate

International Nuclear Information System (INIS)

Rodriguez, J. B.; Cerutti, L.; Grech, P.; Tournie, E.

2009-01-01

We report on a GaSb-based type-I laser structure grown by molecular beam epitaxy on a (001) silicon substrate. A thin AlSb nucleation layer followed by a 1 μm thick GaSb buffer layer was used to accommodate the very large lattice mismatch existing with the silicon substrate. Processed devices with mesa geometry exhibited laser operation in pulsed mode with a duty cycle up to 10% at room temperature

Effect of substrate properties and thermal annealing on the resistivity of molybdenum thin films

International Nuclear Information System (INIS)

Schmid, U.; Seidel, H.

2005-01-01

In this study, the influence of substrate properties (e.g. roughness characteristics and chemical composition) on the electrical resistivity of evaporated molybdenum thin films is investigated as a function of varying parameters, such as film thickness (25-115 nm) and post-deposition annealing with temperatures up to T PDA = 900 deg. C. A thermally oxidized silicon wafer with very low surface roughness was used as one substrate type. In contrast, a low temperature co-fired ceramics substrate with a glass encapsulant printed in thick film technology is the representative for rough surface morphology. The electrical resistivity follows the prediction of the size effect up to T PDA = 600 deg. C independent of substrate nature. On the silicon-based substrate, the thickness-independent portion of the film resistivity ρ g in the 'as deposited' state is about 29 times higher than the corresponding bulk value for a mono-crystalline sample. Thin films of this refractory metal on the SiO 2 /Si substrate exhibit an average grain size of 4.9 nm and a negative temperature coefficient of resistivity (TCR). On the glass/ceramic-based substrate, however, ρ g is half the value as compared to that obtained on the SiO 2 /Si substrate and the TCR is positive

Above room-temperature ferromagnetism in La1-xCaxMnO3 epitaxial thin films on SrTiO3(001) substrates

Science.gov (United States)

Kou, Yunfang; Wang, Hui; Miao, Tian; Wang, Yanmei; Xie, Lin; Wang, Shasha; Liu, Hao; Lin, Hanxuan; Zhu, Yinyan; Wang, Wenbin; Du, Haifeng; Pan, Xiaoqing; Wu, Ruqian; Yin, Lifeng; Shen, Jian

The colossal magnetoresistive (CMR) manganites are popular materials for spintronics applications due to their high spin polarization. Only a couple of manganites like La1-xSrxMnO3 have a Curie temperature (Tc) that is higher than room temperature. Finding methods to raise the Tc of manganites over room temperature is useful but challenging. In this work, we use the most intensively studied La1-xCaxMnO3 (LCMO) as the prototype system to demonstrate that Tc can be greatly enhanced by carefully tuning the electronic structure using doping and strain. Specifically, we grow LCMO films on SrTiO3 (001) substrates using pulsed laser deposition. Magnetic and transport measurements indicate a great enhancement of Tc over room temperature at x =0.2 doping. Theoretical calculations indicate that the combined effects from doping and strain give rise to a new electronic structure favoring ferromagnetism in LCMO system. Furthermore, using the La0.8Ca0.2MnO3 as ferromagnetic electrodes, we achieve finite tunneling magnetoresistance (TMR) above room temperature.

Influence of sulfurization temperature on Cu2ZnSnS4 absorber layer on flexible titanium substrates for thin film solar cells

Science.gov (United States)

Gokcen Buldu, Dilara; Cantas, Ayten; Turkoglu, Fulya; Gulsah Akca, Fatime; Meric, Ece; Ozdemir, Mehtap; Tarhan, Enver; Ozyuzer, Lutfi; Aygun, Gulnur

2018-02-01

In this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.

Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor.

Science.gov (United States)

Zhao, Yuxi; Song, Jeong-Gyu; Ryu, Gyeong Hee; Ko, Kyung Yong; Woo, Whang Je; Kim, Youngjun; Kim, Donghyun; Lim, Jun Hyung; Lee, Sunhee; Lee, Zonghoon; Park, Jusang; Kim, Hyungjun

2018-05-08

The efficient synthesis of two-dimensional molybdenum disulfide (2D MoS2) at low temperatures is essential for use in flexible devices. In this study, 2D MoS2 was grown directly at a low temperature of 200 °C on both hard (SiO2) and soft substrates (polyimide (PI)) using chemical vapor deposition (CVD) with Mo(CO)6 and H2S. We investigated the effect of the growth temperature and Mo concentration on the layered growth by Raman spectroscopy and microscopy. 2D MoS2 was grown by using low Mo concentration at a low temperature. Through optical microscopy, Raman spectroscopy, X-ray photoemission spectroscopy, photoluminescence, and transmission electron microscopy measurements, MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers. Furthermore, we demonstrated the realization of a 2D MoS2-based flexible gas sensor on a PI substrate without any transfer processes, with competitive sensor performance and mechanical durability at room temperature. This fabrication process has potential for burgeoning flexible and wearable nanotechnology applications.

Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

Science.gov (United States)

Polkowski, Wojciech; Sobczak, Natalia; Nowak, Rafał; Kudyba, Artur; Bruzda, Grzegorz; Polkowska, Adelajda; Homa, Marta; Turalska, Patrycja; Tangstad, Merete; Safarian, Jafar; Moosavi-Khoonsari, Elmira; Datas, Alejandro

2017-12-01

For a successful implementation of newly proposed silicon-based latent heat thermal energy storage systems, proper ceramic materials that could withstand a contact heating with molten silicon at temperatures much higher than its melting point need to be developed. In this regard, a non-wetting behavior and low reactivity are the main criteria determining the applicability of ceramic as a potential crucible material for long-term ultrahigh temperature contact with molten silicon. In this work, the wetting of hexagonal boron nitride (h-BN) by molten silicon was examined for the first time at temperatures up to 1750 °C. For this purpose, the sessile drop technique combined with contact heating procedure under static argon was used. The reactivity in Si/h-BN system under proposed conditions was evaluated by SEM/EDS examinations of the solidified couple. It was demonstrated that increase in temperature improves wetting, and consequently, non-wetting-to-wetting transition takes place at around 1650 °C. The contact angle of 90° ± 5° is maintained at temperatures up to 1750 °C. The results of structural characterization supported by a thermodynamic modeling indicate that the wetting behavior of the Si/h-BN couple during heating to and cooling from ultrahigh temperature of 1750 °C is mainly controlled by the substrate dissolution/reprecipitation mechanism.

Development of low temperature RF magnetron sputtered ITO films on flexible substrate

Energy Technology Data Exchange (ETDEWEB)

Muneshwar, T.P.; Varma, V.; Meshram, N; Soni, S.; Dusane, R.O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

2010-09-15

Indium tin oxide (ITO) is one of the important materials used as transparent conducting oxide (TCO) layer in thin film solar cells, digital displays and other similar applications. For applications involving flexible polymeric substrates, it is important that deposition of ITO is carried out at near room temperature. This requirement puts constraint on stoichiometry leading to undesired electrical and optical properties. Effect of oxygen partial pressure on ITO films deposited on flexible Kapton {sup registered} by the RF magnetron sputtering is reported in this paper. (author)

Stability of perovskite solar cells on flexible substrates

Science.gov (United States)

Tam, Ho Won; Chen, Wei; Liu, Fangzhou; He, Yanling; Leung, Tik Lun; Wang, Yushu; Wong, Man Kwong; Djurišić, Aleksandra B.; Ng, Alan Man Ching; He, Zhubing; Chan, Wai Kin; Tang, Jinyao

2018-02-01

Perovskite solar cells are emerging photovoltaic technology with potential for low cost, high efficiency devices. Currently, flexible devices efficiencies over 15% have been achieved. Flexible devices are of significant interest for achieving very low production cost via roll-to-roll processing. However, the stability of perovskite devices remains a significant challenge. Unlike glass substrate which has negligible water vapor transmission rate (WVTR), polymeric flexible film substrates suffer from high moisture permeability. As PET and PEN flexible substrates exhibit higher water permeability then glass, transparent flexible backside encapsulation should be used to maximize light harvesting in perovskite layer while WVTR should be low enough. Wide band gap materials are transparent in the visible spectral range low temperature processable and can be a moisture barrier. For flexible substrates, approaches like atomic layer deposition (ALD) and low temperature solution processing could be used for metal oxide deposition. In this work, ALD SnO2, TiO2, Al2O3 and solution processed spin-on-glass was used as the barrier layer on the polymeric side of indium tin oxide (ITO) coated PEN substrates. The UV-Vis transmission spectra of the prepared substrates were investigated. Perovskite solar cells will be fabricated and stability of the devices were encapsulated with copolymer films on the top side and tested under standard ISOS-L-1 protocol and then compared to the commercial unmodified ITO/PET or ITO/PEN substrates. In addition, devices with copolymer films laminated on both sides successfully surviving more than 300 hours upon continuous AM1.5G illumination were demonstrated.

Effect of surface area of substrates aiming the optimization of carbon nanotube production from ferrocene

International Nuclear Information System (INIS)

Osorio, A.G.; Bergmann, C.P.

2013-01-01

Highlights: ► An optimized synthesis of CNTs by ferrocene is proposed. ► The surface area of substrates influences the nucleation of CNTs. ► The higher the surface area of substrates the lower the temperature of synthesis. ► Chemical composition of substrates has no influence on the growth of CNTs. - Abstract: Ferrocene is widely used for the synthesis of carbon nanotubes due to its ability to act as catalyst and precursor of the synthesis. This paper proposes an optimization of the synthesis of carbon nanotubes from ferrocene, using a substrate with high surface area for their nucleation. Four different surface areas of silica powder were tested: 0.5, 50, 200 and 300 m 2 /g. Raman spectroscopy and microscopy were used to characterize the product obtained and X-ray diffraction and thermal analysis were also performed to evaluate the phases of the material. It was observed that the silica powder with the highest surface area allowed the synthesis of carbon nanotubes to occur at a lower temperature (600 °C), whereas substrates with a surface area lower than 50 m 2 /g will only form carbon nanotubes at temperatures higher than 750 °C. In order to evaluate the influence of chemical composition of the substrate, three different ceramic powders were analyzed: alumina, silica and zirconia. carbon black and previously synthesized carbon nanotubes were also used as substrate for the synthesis and the results showed that the chemical composition of the substrate does not play a relevant role in the synthesis of carbon nanotubes, only the surface area showed an influence.

Plasma deposition of thin film silicon at low substrate temperature and at high growth rate

NARCIS (Netherlands)

Verkerk, A.D.|info:eu-repo/dai/nl/304831719

2009-01-01

To expand the range of applications for thin film solar cells incorporating hydrogenated amorphous silicon (a-Si:H) and hydrogenated nanocrystalline silicon (nc-Si:H), the growth rate has to be increased 0.5 or less to several nm/s and the substrate temperature should be lowered to around 100 C. In

Plastic substrates for active matrix liquid crystal display incapable of withstanding processing temperature of over 200.degree. C and method of fabrication

Energy Technology Data Exchange (ETDEWEB)

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Havens, John (San Diego, CA); Jones, Phil (Marlborough, GB)

1999-01-01

Bright-polarizer-free, active-matrix liquid crystal displays (AMLCDs) are formed on plastic substrates. The primary components of the display are a pixel circuit fabricated on one plastic substrate, an intervening liquid-crystal material, and a counter electrode on a second plastic substrate. The-pixel circuit contains one or more thin-film transistors (TFTs) and either a transparent or reflective pixel electrode manufactured at sufficiently low temperatures to avoid damage to the plastic substrate. Fabrication of the TFTs can be carried out at temperatures less than 100.degree. C. The liquid crystal material is a commercially made nematic curvilinear aligned phase (NCAP) film. The counter electrode is comprised of a plastic substrate coated with a transparent conductor, such as indium-doped tin oxide (ITO). By coupling the active matrix with NCAP, a high-information content can be provided in a bright, fully plastic package. Applications include any low cost portable electronics containing flat displays where ruggedization of the display is desired.

Effects of substrate temperature on sprayed ZnO thin films optical and morphological properties in terms of Amlouk-Boubaker opto-thermal expansivity psi{sub AB}

Energy Technology Data Exchange (ETDEWEB)

Amlouk, A.; Boubaker, K. [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia); Amlouk, M., E-mail: mmbb11112000@yahoo.f [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia)

2009-08-12

In this study, ZnO thin films have been grown using spray pyrolysis technique on glass substrates under various substrate temperature (400, 420, 440, 460, 480 and 500 deg. C). The Precursors were Propan-2-ol C{sub 3}H{sub 8}O and zinc acetate zinc Zn(CH{sub 3}CO{sub 2}){sub 2} in acidified medium (acetic acid CH{sub 3}CO{sub 2}H, pH = 5). XRD analyses yielded a strong (0 0 2) X-ray diffraction line for low substrate temperatures (400-420 deg. C). This c-axis preferential orientation was not observed for substrate temperature beyond 440 deg. C. Atomic Force Microscopy (AFM) analyses monitored clusters with variable shapes (pyramidal for high temperatures and rounded concentrated ones for temperatures below 440 deg. C). Finally, the optical measurements were carried out via transmittance T(lambda) and reflectance R(lambda) spectra inside 250-2500 nm domain. Thanks to optical measurements, the conjoint optical and thermal properties were deduced using the Amlouk-Boubaker opto-thermal expansively psi{sub AB}.

Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

Science.gov (United States)

Papadimitropoulos, G; Davazoglou, D

2011-09-01

In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

Growth of higher fungi on wheat straw and their impact on the digestibility of the substrate

Energy Technology Data Exchange (ETDEWEB)

Moyson, E.; Verachtert, H. (Catholic Univ. of Leuven (Belgium). Faculty of Agriculture)

1991-12-01

The influence of the growth of three higher fungi on the composition of wheat straw was investigated. Pleurotus pulmonarius, P. sajor-caju and Lentinus edodes grew very well on lignocellulosic substrates, breaking down a considerable amount of lignin. The initial lignin concentration of straw was halved after 12 weeks of fungal growth, doubling the enzymic digestibility. Together with lignin, the higher fungi consumed half of the amount of hemicellulose (i.e. 15%), leaving cellulose fairly intact, which should remain as an energy source for ruminants. (orig.).

Effect of the substrate temperature on the physical properties of molybdenum tri-oxide thin films obtained through the spray pyrolysis technique

International Nuclear Information System (INIS)

Martínez, H.M.; Torres, J.; López Carreño, L.D.; Rodríguez-García, M.E.

2013-01-01

Polycrystalline molybdenum tri-oxide thin films were prepared using the spray pyrolysis technique; a 0.1 M solution of ammonium molybdate tetra-hydrated was used as a precursor. The samples were prepared on Corning glass substrates maintained at temperatures ranging between 423 and 673 K. The samples were characterized through micro Raman, X-ray diffraction, optical transmittance and DC electrical conductivity. The species MoO 3 (H 2 O) 2 was found in the sample prepared at a substrate temperature of 423 K. As the substrate temperature rises, the water disappears and the samples crystallize into α-MoO 3 . The optical gap diminishes as the substrate temperature rises. Two electrical transport mechanisms were found: hopping under 200 K and intrinsic conduction over 200 K. The MoO 3 films' sensitivity was analyzed for CO and H 2 O in the temperature range 160 to 360 K; the results indicate that CO and H 2 O have a reduction character. In all cases, it was found that the sensitivity to CO is lower than that to H 2 O. - Highlights: ► A low cost technique is used which produces good material. ► Thin films are prepared using ammonium molybdate tetra hydrated. ► The control of the physical properties of the samples could be done. ► A calculation method is proposed to determine the material optical properties. ► The MoO 3 thin films prepared by spray pyrolysis could be used as gas sensor.

Influence of substrate temperature and annealing on structural and optical properties of TiO{sub 2} films deposited by reactive e-beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Pjević, D., E-mail: dejanp@vinca.rs [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Marinković, T.; Savić, J.; Bundaleski, N.; Obradović, M.; Milosavljević, M. [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Kulik, M. [Frank Laboratory of Neutron Physics, JINR, Joliot-Curie St. 6, Dubna 141980, Moscow Region (Russian Federation)

2015-09-30

The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO{sub 2} thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200–400 °C heated substrates. Post-deposition annealing was done for 3 h at 500 °C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet–visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O ~ 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase–rutile mixed films were obtained, and in some cases TiO and Ti{sub 2}O{sub 3} phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO{sub 2} thin films with defined structure and optical properties. - Highlights: • TiO{sub 2} films were deposited by reactive e-beam evaporation. • Structure and properties were studied as a function of deposition temperature. • Stoichiometry of as-deposited films was Ti:O ~ 1:2, containing different Ti-O phases. • Post-deposition annealing yielded phase transformation, affecting the properties. • Refractive index increases with the substrate deposition temperature.

Investigations on Ni-Co-Mn-Sn thin films: Effect of substrate temperature and Ar gas pressure on the martensitic transformations and exchange bias properties

Energy Technology Data Exchange (ETDEWEB)

Machavarapu, Ramudu, E-mail: macrams2@gmail.com; Jakob, Gerhard [Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudinger Weg 7, D-55128 Mainz (Germany)

2015-03-15

We report the effect of substrate temperature (T{sub S}) and Ar gas pressure (P{sub D}) on the martensitic transformations, magnetic and exchange bias (EB) properties in Heusler type Ni-Co-Mn-Sn epitaxial thin films. Martensitic transformation temperatures and EB fields at 5 K were found to increase with increasing T{sub S}. The observed maximum EB value of 320 Oe after field cooling in the film deposited at 650 {sup ∘}C is high among the values reported for Ni-Mn-Sn thin films which is attributed to the coexistence of ferromagnetic (FM) and antiferromagnetic (AF) phases in the martensitic state. In the case of P{sub D} variation, with increase in P{sub D}, martensitic transformation temperatures were increased and a sharp transformation was observed in the film deposited at 0.06 mbar. Magnetization values at 5 K were higher for increasing P{sub D}. These observations are attributed to the compositional shift. EB effect is also present in these films. Microstructural features observed using atomic force microscopy (AFM) shows a fine twinning and reduced precipitation with increase in P{sub D}, which is also confirmed from the scanning electron microscopy (SEM) images. EB effects in both series were confirmed from the training effect. Target ageing effect has been observed in the films deposited before and after ninety days of time interval. This has been confirmed both on substrate temperature and Ar gas pressure variations.

Effect of substrate temperature on the structure, electrical and optical properties of Mo doped ZnO films

Energy Technology Data Exchange (ETDEWEB)

Chen, Guifeng; Zhao, Xiaoli; Zhang, Hui; Wang, He; Liu, Feifei; Zhang, Xiaoqiang [Key Lab. for New Type of Functional Materials in Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China); Gao, Jianbo [China Institute of Atomic Energy, Beijing 102413 (China); Zhao, Yanmin; Zhang, Chao [No. 18TH Research Institute, China Electronics Technology Group Corporation, Tianjin 300384 (China); Tao, Junguang, E-mail: taojunguang@163.com [Key Lab. for New Type of Functional Materials in Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

2016-09-15

Highlights: • MZO thin films were prepared by RF magnetron sputtering from ZnO target and DC magnetron sputtering from Mo target. • All films are polycrystalline with preferential c-axis growth. • The various properties of films fabricated at varied substrate temperature have been studied. • The valence of the Mo ions in the ZnO matrix is mixture of +5 and +6. - Abstract: Mo-doped ZnO (MZO) transparent conductive thin films were prepared on glass substrate under various substrate temperature from 50 °C to 200 °C. The microstructural, electrical and optical properties of the MZO films were investigated by X-ray diffraction (XRD), Hall effect and UV–vis spectrophotometer. Based on XRD measurements, all films are polycrystalline with preferential c-axis growth. The lowest resistivity was obtained to be 2.8 × 10{sup −3} Ω·cm. According to X-ray photoelectron spectroscopy (XPS) measurement, the valence of the Mo ions in the ZnO matrix is a mixture of +5 and +6. In addition, the transmittance of the film is ∼80% throughout the visible light region. Our results indicate that the MZO films are suitable for potential transparent optoelectronic applications.

Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings

Science.gov (United States)

Vajente, G.; Birney, R.; Ananyeva, A.; Angelova, S.; Asselin, R.; Baloukas, B.; Bassiri, R.; Billingsley, G.; Fejer, M. M.; Gibson, D.; Godbout, L. J.; Gustafson, E.; Heptonstall, A.; Hough, J.; MacFoy, S.; Markosyan, A.; Martin, I. W.; Martinu, L.; Murray, P. G.; Penn, S.; Roorda, S.; Rowan, S.; Schiettekatte, F.; Shink, R.; Torrie, C.; Vine, D.; Reid, S.; Adhikari, R. X.

2018-04-01

Brownian thermal noise in dielectric multilayer coatings limits the sensitivity of current and future interferometric gravitational wave detectors. In this work we explore the possibility of improving the mechanical losses of tantala, often used as the high refractive index material, by depositing it on a substrate held at elevated temperature. Promising results have been previously obtained with this technique when applied to amorphous silicon. We show that depositing tantala on a hot substrate reduced the mechanical losses of the as-deposited coating, but subsequent thermal treatments had a larger impact, as they reduced the losses to levels previously reported in the literature. We also show that the reduction in mechanical loss correlates with increased medium range order in the atomic structure of the coatings using x-ray diffraction and Raman spectroscopy. Finally, a discussion is included on our results, which shows that the elevated temperature deposition of pure tantala coatings does not appear to reduce mechanical loss in a similar way to that reported in the literature for amorphous silicon; and we suggest possible future research directions.

Radiolysis of Aqueous Benzene Solutions at higher temperatures

Energy Technology Data Exchange (ETDEWEB)

Christensen, H

1964-07-15

Aqueous solutions of benzene have been irradiated with Co {gamma}-rays with doses of up to 2.3 Mrad in the temperature region 100 - 200 C. At 100 C a linear relationship between the phenol concentration and the absorbed dose was obtained, but at 150 C and at higher temperatures the rate of the phenol formation increased significantly after an initial constant period. With higher doses the rate decreased again, falling almost to zero at 200 C after a dose of 2.2 Mrad. The G value of phenol in the initial linear period increased from 2.8 at 100 C to 8.0 at 200 C. The reaction mechanism is discussed and reactions constituting a chain reaction are suggested. The result of the addition of iron ions and of a few inorganic oxides to the system is presented and briefly discussed.

Radiolysis of Aqueous Benzene Solutions at higher temperatures

International Nuclear Information System (INIS)

Christensen, H.

1964-07-01

Aqueous solutions of benzene have been irradiated with Co γ-rays with doses of up to 2.3 Mrad in the temperature region 100 - 200 C. At 100 C a linear relationship between the phenol concentration and the absorbed dose was obtained, but at 150 C and at higher temperatures the rate of the phenol formation increased significantly after an initial constant period. With higher doses the rate decreased again, falling almost to zero at 200 C after a dose of 2.2 Mrad. The G value of phenol in the initial linear period increased from 2.8 at 100 C to 8.0 at 200 C. The reaction mechanism is discussed and reactions constituting a chain reaction are suggested. The result of the addition of iron ions and of a few inorganic oxides to the system is presented and briefly discussed

Effect of sintering temperature on the morphology and mechanical properties of PTFE membranes as a base substrate for proton exchange membrane

Directory of Open Access Journals (Sweden)

Nor Aida Zubir

2002-11-01

Full Text Available This paper reports the development of PTFE membranes as the base substrates for producing proton exchange membrane by using radiation-grafting technique. An aqueous dispersion of PTFE, which includes sodium benzoate, is cast in order to form suitable membranes. The casting was done by usinga pneumatically controlled flat sheet membrane-casting machine. The membrane is then sintered to fuse the polymer particles and cooled. After cooling process, the salt crystals are leached from the membrane by dissolution in hot bath to leave a microporous structure, which is suitable for such uses as a filtration membrane or as a base substrate for radiation grafted membrane in PEMFC. The effects of sintering temperature on the membrane morphology and tensile strength were investigated at 350oC and 385oC by using scanning electron microscopy (SEM and EX 20, respectively. The pore size and total void space are significantly smaller at higher sintering temperature employed with an average pore diameter of 11.78 nm. The tensile strength and tensile strain of sintered PTFE membrane at 385oC are approximately 19.02 + 1.46 MPa and 351.04 + 23.13 %, respectively. These results were indicated at 385oC, which represents significant improvements in tensile strength and tensile strain, which are nearly twice those at 350oC.

Temperature dependent IDS–VGS characteristics of an N-channel Si tunneling field-effect transistor with a germanium source on Si(110) substrate

International Nuclear Information System (INIS)

Liu Yan; Yan Jing; Wang Hongjuan; Han Genquan

2014-01-01

We fabricated n-type Si-based TFETs with a Ge source on Si(110) substrate. The temperature dependent I DS –V GS characteristics of a TFET formed on Si(110) are investigated in the temperature range of 210 to 300 K. A study of the temperature dependence of I Leakage indicates that I Leakage is mainly dominated by the Shockley-Read-Hall (SRH) generation—recombination current of the n + drain—Si substrate junction. I ON increases monotonically with temperature, which is attributed to a reduction of the bandgap at the tunneling junction and an enhancement of band-to-band tunneling rate. The subthreshold swing S for trap assisted tunneling (TAT) current and band-to-band tunneling (BTBT) current shows the different temperature dependence. The subthreshold swing S for the TAT current degrades with temperature, while the S for BTBT current is temperature independent. (semiconductor devices)

Growth, Structural and Optical Characterization of ZnO Nanotubes on Disposable-Flexible Paper Substrates by Low-Temperature Chemical Method

Directory of Open Access Journals (Sweden)

M. Y. Soomro

2012-01-01

Full Text Available We report the synthesis of vertically aligned ZnO nanotubes (NTs on paper substrates by low-temperature hydrothermal method. The growth of ZnO NTs on the paper substrate is discussed; further, the structural and optical properties are investigated by scanning electron microscope (SEM, transmission electron microscopy (TEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDS, and cathodoluminescence (CL, and it was found that the ZnO NTs on paper substrate fulfill the structural and optical properties of ZnO NTs grown on other conventional substrates. This will be more beneficial in future usage of ZnO NTs in different fields and applications. Particularly, this approach opens the ways in research and development for high volume manufacturing of low-cost, flexible optoelectronics devices on disposable paper substrates and can be used in the future miniaturization trends.

Temperature-dependent thermal conductivity of flexible yttria-stabilized zirconia substrate via 3ω technique

Energy Technology Data Exchange (ETDEWEB)

Singh, Shivkant; Yarali, Milad; Mavrokefalos, Anastassios [Department of Mechanical Engineering, University of Houston, Houston, TX (United States); Shervin, Shahab [Materials Science and Engineering Program, University of Houston, Houston, TX (United States); Venkateswaran, Venkat; Olenick, Kathy; Olenick, John A. [ENrG Inc., Buffalo, NY (United States); Ryou, Jae-Hyun [Department of Mechanical Engineering, University of Houston, Houston, TX (United States); Materials Science and Engineering Program, University of Houston, Houston, TX (United States); Texas Center for Superconductivity, University of Houston (TcSUH), Houston, TX (United States)

2017-10-15

Thermal management in flexible electronic has proven to be challenging thereby limiting the development of flexible devices with high power densities. To truly enable the technological implementation of such devices, it is imperative to develop highly thermally conducting flexible substrates that are fully compatible with large-scale fabrication. Here, we present the thermal conductivity of state-of-the-art flexible yttria-stabilized zirconia (YSZ) substrates measured using the 3ω technique, which is already commercially manufactured via roll-to-roll technique. We observe that increasing the grain size increases the thermal conductivity of the flexible 3 mol.% YSZ, while the flexibility and transparency of the sample are hardly affected by the grain size enlargement. We exhibit thermal conductivity values of up to 4.16 Wm{sup -1}K {sup -1} that is at least 4 times higher than state-of-the-art polymeric flexible substrates. Phonon-hopping model (PHM) for granular material was used to fit the measured thermal conductivity and accurately define the thermal transport mechanism. Our results show that through grain size optimization, YSZ flexible substrates can be realized as flexible substrates, that pave new avenues for future novel application in flexible electronics through the utilization of both their ceramic structural flexibility and high heat dissipating capability. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Heat-transfer dynamics during cryogen spray cooling of substrate at different initial temperatures

International Nuclear Information System (INIS)

Jia Wangcun; Aguilar, Guillermo; Wang Guoxiang; Nelson, J Stuart

2004-01-01

Cryogen spray cooling (CSC) is used to minimize the risk of epidermal damage during laser dermatologic therapy. However, the dominant mechanisms of heat transfer during the transient cooling process are incompletely understood. The objective of this study is to elucidate the physics of CSC by measuring the effect of initial substrate temperature (T 0 ) on cooling dynamics. Cryogen was delivered by a straight-tube nozzle onto a skin phantom. A fast-response thermocouple was used to record the phantom temperature changes before, during and after the cryogen spray. Surface heat fluxes (q'') and heat-transfer coefficients (h) were computed using an inverse heat conduction algorithm. The maximum surface heat flux (q'' max ) was observed to increase with T 0 . The surface temperature corresponding to q'' max also increased with T 0 but the latter has no significant effect on h. It is concluded that heat transfer between the cryogen spray and skin phantom remains in the nucleate boiling region even if T 0 is 80 0 C

Palladium clusters deposited on the heterogeneous substrates

Energy Technology Data Exchange (ETDEWEB)

Wang, Kun, E-mail: cqdxwk@126.com [College of Power Engineering, Chongqing University, Chongqing 400044 (China); Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education of PRC, Chongqing 400044 (China); Liu, Juanfang, E-mail: juanfang@cqu.edu.cn [College of Power Engineering, Chongqing University, Chongqing 400044 (China); Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education of PRC, Chongqing 400044 (China); Chen, Qinghua, E-mail: qhchen@cqu.edu.cn [College of Power Engineering, Chongqing University, Chongqing 400044 (China); Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education of PRC, Chongqing 400044 (China)

2016-07-15

Graphical abstract: The site-exchange between the substrate and cluster atoms can result in the formation of the surface alloys and the reconstruction of the cluster structure before the collision system approaching the thermal equilibrium. The deposited cluster adjusted the atom arrangement as possibly as to match the substrate lattice arrangement from bottom to up. The structural reconstruction is accompanied by the system potential energy minimization. - Highlights: • The deposition process can divide explicitly into three stages: adsorption, collision, relaxation. • The local melt does not emerge inside the substrate during the deposition process. • Surface alloys are formed by the site-exchange between the cluster and substrate atoms. • The cluster reconstructs the atom arrangement following as the substrate lattice arrangement from bottom to up. • The structural reconstruction ability and scope depend on the cluster size and incident energy. - Abstract: To improve the performance of the Pd composite membrane prepared by the cold spraying technology, it is extremely essential to give insights into the deposition process of the cluster and the heterogeneous deposition of the big Pd cluster at the different incident velocities on the atomic level. The deposition behavior, morphologies, energetic and interfacial configuration were examined by the molecular dynamic simulation and characterized by the cluster flattening ratio, the substrate maximum local temperature, the atom-embedded layer number and the surface-alloy formation. According to the morphology evolution, three deposition stages and the corresponding structural and energy evolution were clearly identified. The cluster deformation and penetrating depth increased with the enhancement of the incident velocity, but the increase degree also depended on the substrate hardness. The interfacial interaction between the cluster and the substrate can be improved by the higher substrate local temperature

Influence of substrate temperature and silver-doping on the structural and optical properties of TiO_2 films

International Nuclear Information System (INIS)

Fischer, Dieter

2016-01-01

Evaporation of titanium together with activated oxygen is used to grow TiO_2 films and simultaneously with silver to grow Ag–TiO_2 films (5 at.% Ag) onto sapphire substrates at three different substrate temperatures: − 190, 30, and 200 °C. The obtained films were characterized by X-ray powder diffraction, Raman, X-ray photoelectron, ultraviolet–visible spectroscopy, and transmission electron microscope investigations. The properties of TiO_2 films varied with the substrate temperature. Amorphous, transparent TiO_2 films were grown at − 190 °C and opaque, polycrystalline films at 200 °C, respectively. Surprisingly, at room temperature black, amorphous TiO_2 films are obtained which transform at 350 °C into a mixture of the anatase and brookite polymorph. In the amorphous state of the TiO_2 films a predefined rutile arrangement is suggested by Raman investigations, and the contraction of the lattice constant c of anatase phases (tetragonal, space group I 4_1/amd) depending on the substrate temperature is experimentally observed. The silver-doped TiO_2 films deposited at − 190 and 30 °C contain Ag-particles with 2 nm in size inside the TiO_2 matrix, which after annealing segregate under increasing particle sizes. The silver-doping stabilizes the anatase polymorph and yields to reduced titanium species in the films especially during deposition at 30 °C. The Ag–TiO_2 films deposited at − 190 °C are transparent up to 350 °C. In the undoped as well as silver-doped TiO_2 films the rutile polymorph is directly formed at 200 °C as main phase. - Highlights: • At room temperature black, amorphous TiO_2 films are obtained. • A predefined rutile arrangement is suggested in amorphous TiO_2 films. • Annealed TiO_2 films crystallize to a mixture of the anatase and brookite polymorph. • In TiO_2 and Ag-doped TiO_2 films the rutile polymorph is directly formed at 200 °C. • Ag-doped TiO_2 films stabilize the anatase polymorph and reduced titanium

Single-crystal-like GdNdOx thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Directory of Open Access Journals (Sweden)

Ziwei Wang

2016-06-01

Full Text Available Single-crystal-like rare earth oxide thin films on silicon (Si substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdOx (GNO film was deposited using a high-temperature sputtering process at 500°C. A Gd2O3 and Nd2O3 mixture was used as the sputtering target, in which the proportions of Gd2O3 and Nd2O3 were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Directory of Open Access Journals (Sweden)

Guangyang Lin

2016-09-01

Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

MgB2 thin films on silicon nitride substrates prepared by an in situ method

International Nuclear Information System (INIS)

Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S

2004-01-01

Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

Co thin film with metastable bcc structure formed on GaAs(111 substrate

Directory of Open Access Journals (Sweden)

Minakawa Shigeyuki

2014-07-01

Full Text Available Co thin films are prepared on GaAs(111 substrates at temperatures ranging from room temperature to 600 ºC by radio-frequency magnetron sputtering. The growth behavior and the detailed resulting film structure are investigated by in-situ reflection high-energy electron diffraction and X-ray diffraction. In early stages of film growth at temperatures lower than 200 ºC, Co crystals with metastable A2 (bcc structure are formed, where the crystal structure is stabilized through hetero-epitaxial growth. With increasing the film thickness beyond 2 nm, the metastable structure starts to transform into more stable A1 (fcc structure through atomic displacements parallel to the A2{110} close-packed planes. The crystallographic orientation relationship between the A2 and the transformed A1 crystals is A1{111} || A2{110}. When the substrate temperature is higher than 400 ºC, Ga atoms of substrate diffuse into the Co films and a Co-Ga alloy with bcc-based ordered structure of B2 is formed.

Flexible and foldable paper-substrate thermoelectric generator (teg)

KAUST Repository

Rojas, Jhonathan Prieto

2017-08-24

Flexible and foldable paper-substrate thermoelectric generators (TEGs) and methods for making the paper-substrate TEGs are disclosed. A method includes depositing a plurality of thermocouples in series on a paper substrate to create a paper-substrate TEG, wherein the plurality of thermocouples is deposited between two contact points of the paper-substrate TEG. The method may also include setting the power density and maximum achievable temperature gradient of the paper-substrate TEG by folding the paper-substrate TEG. A paper-substrate TEG apparatus may include a paper substrate and a plurality of thermocouples deposited in series on the paper substrate between two contact points of the paper-substrate TEG, wherein the power density and maximum achievable temperature gradient of the paper-substrate TEG is set by folding the paper-substrate TEG.

The effect of substrate temperature on atomic layer deposited zinc tin oxide

Energy Technology Data Exchange (ETDEWEB)

Lindahl, Johan, E-mail: johan.lindahl@angstrom.uu.se; Hägglund, Carl, E-mail: carl.hagglund@angstrom.uu.se; Wätjen, J. Timo, E-mail: timo.watjen@angstrom.uu.se; Edoff, Marika, E-mail: marika.edoff@angstrom.uu.se; Törndahl, Tobias, E-mail: tobias.torndahl@angstrom.uu.se

2015-07-01

Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO{sub x} ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm{sup 3} in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap.

The effect of substrate temperature on atomic layer deposited zinc tin oxide

International Nuclear Information System (INIS)

Lindahl, Johan; Hägglund, Carl; Wätjen, J. Timo; Edoff, Marika; Törndahl, Tobias

2015-01-01

Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO x ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm 3 in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap

Temperature variation of higher-order elastic constants of MgO

Indian Academy of Sciences (India)

series of strains using Taylor's series expansion. The coefficients of quadratic, cu- ... as thermal expansion, specific heat at higher temperature, temperature variation of ultrasonic velocity and attenuation, .... such studies have an impression that linear variation of elastic constant is true. The experimental study shows that ...

Fabrication and characterization of nickel nanowires deposited on metal substrate

International Nuclear Information System (INIS)

Rahman, I.Z.; Razeeb, K.M.; Rahman, M.A.; Kamruzzaman, Md.

2003-01-01

The present investigation is a part of ongoing systematic study of production and process development of nanometer scale arrays of magnetic wires on metal substrates. Nickel nanowires are grown in ordered anodic alumina templates using galvanostatic electrodeposition. In this paper we report on the growth of nanowires on the electrochemical cell parameters such as bath temperature, pH and time. Focused ion beam analysis revealed heterogeneous growth of nickel nanowires. X-ray diffraction spectrum showed that FCC nickel changed the preferred orientation from (2 2 0) at lower bath temperatures to (2 0 0) at higher bath temperatures. Magnetic measurement showed that coercive fields were higher for wires with smaller diameters. Magneto-impedance was measured as a function of applied magnetic field and wire diameter

Deposition characteristics of copper particles on roughened substrates through kinetic spraying

International Nuclear Information System (INIS)

Kumar, S.; Bae, Gyuyeol; Lee, Changhee

2009-01-01

In this paper, a systematic study of copper particle deposition behavior on polished and roughened surfaces (aluminum and copper) in kinetic spray process has been performed. The particle deformation behavior was simulated through finite element analysis (FEA) software ABAQUS explicit 6.7-2. The particle-substrate contact time, contact temperature and contact area upon impact have been estimated for smooth and three different roughened substrate cases. Copper powders were deposited on smooth and grit-blasted copper and aluminium substrates and characterized through scanning electron microscopy and Romulus bond strength analyzer. The results indicate that the deformation and the resultant bonding were higher for the roughened substrates than that of smooth. The characteristic factors for bonding are reported and discussed. Thus the substrate roughness appears to be beneficial for the initial deposition efficiency of the kinetic spray process.

A comparative analysis of property of lychee polyphenoloxidase using endogenous and exogenous substrates.

Science.gov (United States)

Sun, Jian; Shi, John; Zhao, Mouming; Xue, Sophia Jun; Ren, Jiaoyan; Jiang, Yueming

2008-06-01

Lychee polyphenoloxidase (PPO) was extracted and partially purified using ammonium sulphate precipitation and dialysis. The comparative analysis of PPO property was performed using its endogenous substrate (-)-epicatechin and exogenous substrate catechol. The pH optima for activity and activation temperature profiles of lychee PPO were very different when the enzyme reacted with endogenous and exogenous substrates. The addition of ethylenediaminetetraacetic acid disodium salt into the endogenous or exogenous substrate-enzyme system exhibited the same lowest inhibition of the PPO activity. However, l-cysteine was most effective in inhibiting enzymatic activity in the endogenous substrate-enzyme system while ascorbic acid was the best inhibitor in the exogenous substrate-enzyme system. Fe(2+) greatly accelerated the enzymatic reaction between endogenous substrate and PPO, but Cu(2+) exerted the same effect on the reaction between exogenous substrate and PPO. Based on the kinetic analysis, lychee PPO could strongly bind endogenous substrate but it possessed a higher catalytic efficiency to exogenous substrate. Copyright © 2007 Elsevier Ltd. All rights reserved.

Influence of the starch content and sintering temperature on the processing of porous zirconia substrates

International Nuclear Information System (INIS)

Albano, Maria P; Garrido, Liliana B

2008-01-01

Porous ceramics are used as electrodes in fuel cells, separators in batteries, filters, etc. Thin porous substrates of zirconium stabilized with yttrium oxide (ZSY) are used as anodes in solid oxide fuel cells. One way to obtain a porous band is to mix starch particles during the preparation stage of the ZSY suspension. The starch burns during the removal of the binder and leaves stable pores that are not eliminated in the subsequent sintering stage. This work used the band pouring process to produce porous bands of ZSY with porosities of 29% to 53% using starch as a transitory additive. Concentrated aqueous suspensions of ZSY were prepared with different contents of starch and of an acrylic latex binder. The influence of the fraction of starch volume and of the temperature on the sintering behavior and on the final micro structure of the bands was studied. The total porosity of the bands was higher than the fractions in volume of added starch, due to the presence of closed porosity in the matrix. The deviations compared to the porosity predicted based on the fractions in the volume of starch, were greater as the starch content increased. The percentage of open porosity in the sintered bands depended on the fraction in the volume of added starch and on the sintering temperature. When the fraction in volume of starch increased from 17.6% to 37.8% a gradual increase occurred in the opening of the porous structure. The contraction of the bands during sintering at a given temperature correlated with the density of the packing of ZSY (au)

Method and apparatus for forming high-critical-temperature superconducting layers on flat and/or elongated substrates

Science.gov (United States)

Ciszek, Theodore F.

1994-01-01

An elongated, flexible superconductive wire or strip is fabricated by pulling it through and out of a melt of metal oxide material at a rate conducive to forming a crystalline coating of superconductive metal oxide material on an elongated, flexible substrate wire or strip. A coating of crystalline superconductive material, such as Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8, is annealed to effect conductive contact between adjacent crystalline structures in the coating material, which is then cooled to room temperature. The container for the melt can accommodate continuous passage of the substrate through the melt. Also, a second pass-through container can be used to simultaneously anneal and overcoat the superconductive coating with a hot metallic material, such as silver or silver alloy. A hollow, elongated tube casting method of forming an elongated, flexible superconductive wire includes drawing the melt by differential pressure into a heated tubular substrate.

Heating of polymer substrate by discharge plasma in radiofrequency magnetron sputtering deposition

International Nuclear Information System (INIS)

Sirghi, Lucel; Popa, Gheorghe; Hatanaka, Yoshinori

2006-01-01

The substrate used for the thin film deposition in a radiofrequency magnetron sputtering deposition system is heated by the deposition plasma. This may change drastically the surface properties of the polymer substrates. Deposition of titanium dioxide thin films on polymethyl methacrylate and polycarbonate substrates resulted in buckling of the substrate surfaces. This effect was evaluated by analysis of atomic force microscopy topography images of the deposited films. The amount of energy received by the substrate surface during the film deposition was determined by a thermal probe. Then, the results of the thermal probe measurements were used to compute the surface temperature of the polymer substrate. The computation revealed that the substrate surface temperature depends on the substrate thickness, discharge power and substrate holder temperature. For the case of the TiO 2 film depositions in the radiofrequency magnetron plasma, the computation indicated substrate surface temperature values under the polymer melting temperature. Therefore, the buckling of polymer substrate surface in the deposition plasma may not be regarded as a temperature driven surface instability, but more as an effect of argon ion bombardment

Deposition of Y-Sm Oxide on Metallic Substrates for the YBCO Coated Conductor by MOCVD Method

International Nuclear Information System (INIS)

Choi, Jun Kyu; Kim, Min Woo; Jun, Byung Hyuk; Kim, Chan Joong; Lee, Hee Gyoun; Hong, Gye Won

2005-01-01

Complex single buffer composed of yttrium and samarium oxide was deposited on the metallic substrates by MOCVD (metal organic chemical vapor deposition) method using single liquid source. Two different types of the substrates with in-plane textures of about 8 - 10 degree of Ni and 3at.%W-Ni alloy were used. Y(tmhd: 2,2,6,6-tetramethyl-3,5-heptane dionate) 3 :Sm(tmhd) 3 of liquid source was adjusted to 0.4:0.6 to minimize the lattice mismatch between the complex single buffer and the YBCO. The epitaxial growth of (Y x Sm 1-x ) 2 O 3 was achieved at the temperature higher than 500 degree C in O 2 atmosphere. However, it was found that the formation of NiO accelerated with increasing deposition temperature. By supplying H 2 O vapor, this oxidation of the substrate could be suppressed throughout the deposition temperatures. We could get the epitaxial growth on pure Ni substrate without the formation of NiO. The competitive (222) and (400) growths were observed at the deposition temperatures of 650 - 750 degree C, but the (400) growth became dominant above 800 degree. The (Y x Sm 1-x ) 2 O 3 -buffered metallic substrates can be used as the buffer for YBCO coated conductor.

High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate

KAUST Repository

Qian, Ling-Xuan; Zhang, Hua-Fan; Lai, P. T.; Wu, Ze-Han; Liu, Xing-Zhao

2017-01-01

-annealing temperature must be sufficiently high to offset the rise of the dark current and thus achieve a remarkable improvement in the photodetection properties. As a result, the PD fabricated on the 1050 degrees C-annealed substrate exhibited extremely high

Temperature calibration procedure for thin film substrates for thermo-ellipsometric analysis using melting point standards

International Nuclear Information System (INIS)

Kappert, Emiel J.; Raaijmakers, Michiel J.T.; Ogieglo, Wojciech; Nijmeijer, Arian; Huiskes, Cindy; Benes, Nieck E.

2015-01-01

Highlights: • Facile temperature calibration method for thermo-ellipsometric analysis. • The melting point of thin films of indium, lead, zinc, and water can be detected by ellipsometry. • In-situ calibration of ellipsometry hot stage, without using any external equipment. • High-accuracy temperature calibration (±1.3 °C). - Abstract: Precise and accurate temperature control is pertinent to studying thermally activated processes in thin films. Here, we present a calibration method for the substrate–film interface temperature using spectroscopic ellipsometry. The method is adapted from temperature calibration methods that are well developed for thermogravimetric analysis and differential scanning calorimetry instruments, and is based on probing a transition temperature. Indium, lead, and zinc could be spread on a substrate, and the phase transition of these metals could be detected by a change in the Ψ signal of the ellipsometer. For water, the phase transition could be detected by a loss of signal intensity as a result of light scattering by the ice crystals. The combined approach allowed for construction of a linear calibration curve with an accuracy of 1.3 °C or lower over the full temperature range

High Momentum Particle Identification Detector The Study of Cesium Iodide Quantum Efficiency Dependency on Substrate Material, Temperature and Quartz Window

CERN Document Server

Wisna, Gde Bimananda M

2014-01-01

The Cesium Iodide (CsI) is used as a material for detecting Cherenkov radiation produced by high momentum particle in High Momentum Particle Identification Detector (HMPID) at ALICE Experiment at CERN. This work provides investigation and analysis of The Quantum Efficiency (QE) result of CsI which is deposited on five samples substrates such as copper passivated red, copper passivated yellow, aluminium, copper coated with nickel and copper coated with nickel then coated with gold. The measurement of five samples is held under temperature $60^{0}$ C and $25^{0}$ C (room temperature) and also with optical quartz window which can be adjusted to limit the wavelength range which reach the CsI. The result shows there are dependency of substrate, temperature due to enhancement effect and also quartz windows usage on QE of CsI. The results of five samples is then compared and analyzed.

Fabrication of textured Ni–9.3at.%W substrate by electropulsing intermediate annealing method

International Nuclear Information System (INIS)

Liu, Jianan; Liu, Wei; Tang, Guoyi; Zhu, Rufei

2014-01-01

Highlights: •It’s the first time that EIA is used on Ni9 W substrate production. •Compared with CIA, EIA trends to sharpen the rolling texture. •Improved cube recrystallization texture is obtained by EIA. •EIA provides a highly efficient approach for Ni9 W substrate manufacture. -- Abstract: Sharp cube texture is difficult to obtain in high W content Ni–W alloy substrates used for coated conductors. In this paper, a new method called electropulsing intermediate annealing (EIA) is adopted to optimize the rolling and recrystallization texture of Ni–9.3 at.%W substrate. It is found that, compared with conventional intermediate annealing (CIA) at the same temperature, EIA trends to increase the Copper, S and Brass components, suppress the Goss component in rolling texture. Higher cube recrystallization texture is obtained at relatively low temperature by EIA in a shorter time. The effect of EIA on texture is attributed to the enhancement of recovery process resulting from the athermal effects

Surface morphology of polyethylene glycol films produced by matrix-assisted pulsed laser evaporation (MAPLE): Dependence on substrate temperature

DEFF Research Database (Denmark)

Rodrigo, K.; Czuba, P.; Toftmann, B.

2006-01-01

The dependence of the surface morphology on the substrate temperature during film deposition was investigated for polyethylene glycol (PEG) films by matrix-assisted pulsed laser evaporation (MAPLE). The surface structure was studied with a combined technique of optical imaging and AFM measurements...

Impact of deposition temperature on the properties of SnS thin films grown over silicon substrate—comparative study of structural and optical properties with films grown on glass substrates

Science.gov (United States)

Assili, Kawther; Alouani, Khaled; Vilanova, Xavier

2017-11-01

Tin sulfide (SnS) thin films were chemically deposited over silicon substrate in a temperature range of 250 °C-400 °C. The effects of deposition temperature on the structural, morphological and optical properties of the films were evaluated. All films present an orthorhombic SnS structure with a preferred orientation along (040). High absorption coefficients (in the range of 105 cm-1) were found for all obtained films with an increase in α value when deposition temperature decreases. Furthermore, the effects of substrate type were investigated based on comparison between the present results and those obtained for SnS films grown under the same deposition conditions but over glass substrate. The results suggest that the formation of SnS films onto glass substrate is faster than onto silicon substrate. It is found that the substrate nature affects the orientation growth of the films and that SnS films deposited onto Si present more defects than those deposited onto glass substrate. The optical transmittance is also restricted by the substrate type, mostly below 1000 nm. The obtained results for SnS films onto silicon suggest their promising integration within optoelectronic devices.

Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Armstrong, A.; Poblenz, C.; Green, D.S.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

2006-01-01

The electrical conductivity and deep level spectrum of GaN grown by molecular beam epitaxy and codoped with carbon and silicon were investigated for substrate temperatures T s of 650 and 720 deg. C as a function relative carbon and silicon doping levels. With sufficiently high carbon doping, semi-insulating behavior was observed for films grown at both temperatures, and growth at T s =720 deg. C enhanced the carbon compensation ratio. Similar carbon-related band gap states were observed via deep level optical spectroscopy for films grown at both substrate temperatures. Due to the semi-insulating nature of the films, a lighted capacitance-voltage technique was required to determine individual deep level concentrations. Carbon-related band gap states underwent substantial redistribution between deep level and shallow acceptor configurations with change in T s . In light of a T s dependence for the preferential site of carbon incorporation, a model of semi-insulating behavior in terms of carbon impurity state incorporation mediated by substrate temperature is proposed

Absence of low temperature phase transitions and enhancement of ferroelectric transition temperature in highly strained BaTiO{sub 3} epitaxial films grown on MgO Substrates

Energy Technology Data Exchange (ETDEWEB)

Kumar, Satish; Kumar, Dhirendra; Sathe, V. G., E-mail: vasant@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001 (India); Kumar, Ravi; Sharma, T. K. [Semiconductor Physics and Devices Lab, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2015-04-07

Recently, a large enhancement in the ferroelectric transition temperature of several oxides is reported by growing the respective thin films on appropriate substrates. This phenomenon is correlated with high residual strain in thin films often leading to large increase in the tetragonality of their crystal structure. However, such an enhancement of transition temperature is usually limited to very thin films of ∼10 nm thickness. Here, we report growth of fully strained epitaxial thin films of BaTiO{sub 3} of 400 nm thickness, which are coherently grown on MgO substrates by pulsed laser deposition technique. Conventional high resolution x-ray diffraction and also the reciprocal space map measurements confirm that the film is fully strained with in-plane tensile strain of 5.5% that dramatically increases the tetragonality to 1.05. Raman measurements reveal that the tetragonal to cubic structural phase transition is observed at 583 K, which results in an enhancement of ∼200 K. Furthermore, temperature dependent Raman studies on these films corroborate absence of all the low temperature phase transitions. Numerical calculations based on thermodynamical model predict a value of the transition temperature that is greater than 1500 °C. Our experimental results are therefore in clear deviation from the existing strain dependent phase diagrams.

Calculating transport AC losses in stacks of high temperature superconductor coated conductors with magnetic substrates using FEM

International Nuclear Information System (INIS)

Ainslie, Mark D.; Flack, Tim J.; Campbell, Archie M.

2012-01-01

Properties of stacks of HTS coated conductors with and without a magnetic substrate. Non-magnetic substrate model is consistent with existing methods. Presence of a magnetic substrate increases the total AC loss of the stack. Differences and similarities between certain tapes within stacks are explained. Ferromagnetic loss of substrate negligible in most cases except small currents/fields. In this paper, the authors investigate the electromagnetic properties of stacks of high temperature superconductor (HTS) coated conductors with a particular focus on calculating the total transport AC loss. The cross-section of superconducting cables and coils is often modeled as a two-dimensional stack of coated conductors, and these stacks can be used to estimate the AC loss of a practical device. This paper uses a symmetric two dimensional (2D) finite element model based on the H formulation, and a detailed investigation into the effects of a magnetic substrate on the transport AC loss of a stack is presented. The number of coated conductors in each stack is varied from 1 to 150, and three types of substrate are compared: non-magnetic weakly magnetic and strongly magnetic. The non-magnetic substrate model is comparable with results from existing models for the limiting cases of a single tape (Norris) and an infinite stack (Clem). The presence of a magnetic substrate increases the total AC loss of the stack, due to an increased localized magnetic flux density, and the stronger the magnetic material, the further the flux penetrates into the stack overall. The AC loss is calculated for certain tapes within the stack, and the differences and similarities between the losses throughout the stack are explained using the magnetic flux penetration and current density distributions in those tapes. The ferromagnetic loss of the substrate itself is found to be negligible in most cases, except for small magnitudes of current. Applying these findings to practical applications, where AC

High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

Science.gov (United States)

Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

2012-06-01

Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

Aggregation of human sperm at higher temperature is due to hyperactivation.

Science.gov (United States)

Keppler, E L; Chan, P J; Patton, W C; King, A

1999-01-01

Chemotaxis of sperm cells to chemicals and hormones, such as progesterone, helps us to understand the concept of sperm transport. Here, the hypothesis was that heat increased sperm hyperactive motility, which caused the sperm to aggregate at the higher temperature. The objectives were (1) to determine the concentration of sperm at both halves of an artificial female reproductive tract made from a hermetically sealed cryopreservation straw filled with culture medium and placed with each end at different temperatures, and (2) to analyze the motility or kinematic parameters and hyperactivation of sperm found at the different temperatures. Cryopreserved-thawed human donor sperm (N = 6) were pooled and processed through 2-layer colloid solution. Analyses of the motile sperm were carried out and the washed sperm were homogeneously mixed and pipetted into several 0.5-mL French cryopreservation straws and heat-sealed. The control substance, consisting of acid-treated sperm, was also placed in several straws. The plastic straws of sperm were placed half at 23 degrees C and half was at either 37 or 40 degrees C. After 4 h, sperm at different sections of the straws were analyzed using the Hamilton Thorn motility analyzer (HTM-C). After 4 h of incubation, the concentration of sperm was doubled at the 40 degrees C heated half of the straw when compared with the other half of the straw at 23 degrees C. There were no differences in sperm concentration in the straw kept half at 37 degrees C and half at 23 degrees C. There were significantly higher percent motility, mean average path velocity, straight line velocity, lateral head displacement, and percent hyperactivation in sperm at the 40 degrees C temperature. The aggregation of sperm at the higher temperature of 40 degrees C may be due to enhanced motility, increased sperm velocities, and a 10-fold increase in hyperactivation at that temperature. The 37 degrees C temperature was not sufficient to attract sperm. Sperm cells

High density microelectronics package using low temperature cofirable ceramics

International Nuclear Information System (INIS)

Fu, S.-L.; Hsi, C.-S.; Chen, L.-S.; Lin, W. K.

1997-01-01

Low Temperature Cofired Ceramics (LTCC) is a relative new thick film process and has many engineering and manufacturing advantages over both the sequential thick film process and high temperature cofired ceramic modules. Because of low firing temperature, low sheet resistance metal conductors, commercial thick film resistors, and thick film capacitors can be buried in or printed on the substrates. A 3-D multilayer ceramic substrate can be prepared via laminating and co-firing process. The packing density of the LTCC substrates can be increased by this 3-D packing technology. At Kaohsiung Polytechnic Institute (KPI), a LTCC substrate system has been developed for high density packaging applications, which had buried surface capacitors and resistors. The developed cordierite-glass ceramic substrate, which has similar thermal expansion as silicon chip, is a promising material for microelectronic packaging. When the substrates were sintered at temperatures between 850-900 degree centigrade, a relative density higher than 96 % can be obtained. The substrate had a dielectric constant between 5.5 and 6.5. Ruthenium-based resistor pastes were used for resistors purposes. The resistors fabricated in/on the LTCC substrates were strongly depended on the microstructures developed in the resistor films. Surface resistors were laser trimmed in order to obtain specific values for the resistors. Material with composition Pb(Fe 2/3 W 1/3 ) x (Fe l/2 Nb l/2 ) y Ti 2 O 3 was used as dielectric material of the capacitor in the substrate. The material can be sintered at temperatures between 850-930 degree centigrade, and has dielectric constant as high as 26000. After cofiring, good adhesion between dielectric and substrate layers was obtained. Combing the buried resistors and capacitors together with the lamination of LTCC layer, a 3-dimensional multilayered ceramic package was fabricated. (author)

High density microelectronics package using low temperature cofirable ceramics

Energy Technology Data Exchange (ETDEWEB)

Fu, S -L; Hsi, C -S; Chen, L -S; Lin, W K [Kaoshiung Polytechnic Institute Ta-Hsu, Kaoshiung (China)

1998-12-31

Low Temperature Cofired Ceramics (LTCC) is a relative new thick film process and has many engineering and manufacturing advantages over both the sequential thick film process and high temperature cofired ceramic modules. Because of low firing temperature, low sheet resistance metal conductors, commercial thick film resistors, and thick film capacitors can be buried in or printed on the substrates. A 3-D multilayer ceramic substrate can be prepared via laminating and co-firing process. The packing density of the LTCC substrates can be increased by this 3-D packing technology. At Kaohsiung Polytechnic Institute (KPI), a LTCC substrate system has been developed for high density packaging applications, which had buried surface capacitors and resistors. The developed cordierite-glass ceramic substrate, which has similar thermal expansion as silicon chip, is a promising material for microelectronic packaging. When the substrates were sintered at temperatures between 850-900 degree centigrade, a relative density higher than 96 % can be obtained. The substrate had a dielectric constant between 5.5 and 6.5. Ruthenium-based resistor pastes were used for resistors purposes. The resistors fabricated in/on the LTCC substrates were strongly depended on the microstructures developed in the resistor films. Surface resistors were laser trimmed in order to obtain specific values for the resistors. Material with composition Pb(Fe{sub 2/3}W{sub 1/3}){sub x}(Fe{sub l/2}Nb{sub l/2}){sub y}Ti{sub 2}O{sub 3} was used as dielectric material of the capacitor in the substrate. The material can be sintered at temperatures between 850-930 degree centigrade, and has dielectric constant as high as 26000. After cofiring, good adhesion between dielectric and substrate layers was obtained. Combing the buried resistors and capacitors together with the lamination of LTCC layer, a 3-dimensional multilayered ceramic package was fabricated. (author)

High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate

KAUST Repository

Qian, Ling-Xuan

2017-09-20

Recently, monoclinic Ga2O3 (beta-Ga2O3) photodetectors (PDs) have been extensively studied for various commercial and military applications due to the merits of intrinsic solar rejection, high gain, and great compactness. In this work, c-plane sapphire substrates were annealed under different temperatures in a vacuum furnace prior to the molecular beam epitaxy (MBE) of beta-Ga2O3 thin film, which yielded a smoother surface and even a terraceand- step-like morphology on the substrate, resulting in improved crystallinity of the epitaxial film. Accordingly, both the dark and photo currents of beta-Ga2O3 metal-semiconductor-metal (MSM) PDs were increased by the enhanced carrier mobility (mu) of the more crystalline film. However, the substrate-annealing temperature must be sufficiently high to offset the rise of the dark current and thus achieve a remarkable improvement in the photodetection properties. As a result, the PD fabricated on the 1050 degrees C-annealed substrate exhibited extremely high sensitivity, for example, high responsivity (R) of 54.9 A/ W and large specific detectivity (D*) of 3.71 x 10(14) Jones. Both parameters were increased by one order of magnitude because of the combined effects of the dramatic increase in mu and the effective reduction in defect-related recombination centers. Nevertheless, the latter also prolonged the recovery time of the PD. These findings suggest another way to develop beta-Ga2O3 PD with extremely high sensitivity. (C) 2017 Optical Society of America

Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

Science.gov (United States)

Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

2014-01-01

Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

Directory of Open Access Journals (Sweden)

Frigeri C

2010-01-01

Full Text Available Abstract We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 107 to 109 cm−2. The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III–V quantum nanostructures directly on silicon substrate.

Synthesis and characterisation of novel low temperature ceramic and its implementation as substrate in dual segment CDRA

Science.gov (United States)

Kumari, Preeti; Tripathi, Pankaj; Sahu, Bhagirath; Singh, S. P.; Parkash, Om; Kumar, Devendra

2018-02-01

Li2O-(2-3x)MgO-(x)Al2O3-P2O5 (LMAP) (x = 0.00-0.08) ceramic system was prepared through solid state synthesis route at different sintering temperatures (800-925 °C). A small addition of Al2O3 (x = 0.02) in LMAP ceramics lowers the sintering temperature by more than 100 °C with good relative density of 94.13%. The sintered samples were characterized in terms of density, apparent porosity, water absorption, crystal structure, micro-structure and microwave dielectric properties. Silver compatibility test is also performed for its use as electrode material in low temperature co-fired ceramic (LTCC) application. To check the performance of the prepared LTCC as substrate, a microstrip-fed aperture-coupled dual segment cylindrical dielectric resonator antenna (DS-CDRA) is designed using LMAP (x = 0.02) ceramic as substrate material and Barium Strontium Titanate with 10 wt% of PbO-BaO-B2O3-SiO2 glass (BSTG) and Teflon as the components of resonating material. The simulation study of the DS-CDRA is performed using the Ansys High Frequency Structure Simulator (HFSS) software. A conductive coating of silver is used on the substrate. The simulated and measured -10 dB reflection coefficient bandwidths of 910 MHz (9.07-9.98 GHz at resonant frequency of 9.49 GHz) and 1080 MHz (8.68-9.76 GHz at resonant frequency of 9.36 GHz), respectively are achieved. The measured results of the fabricated antenna are found in good agreement with the simulation results. The prepared material can find potential applications in radar and radio navigation as well as radio astronomy and military satellite communication.

A dye-decolorizing peroxidase from Bacillus subtilis exhibiting substrate-dependent optimum temperature for dyes and β-ether lignin dimer

Science.gov (United States)

Min, Kyoungseon; Gong, Gyeongtaek; Woo, Han Min; Kim, Yunje; Um, Youngsoon

2015-01-01

In the biorefinery using lignocellulosic biomass as feedstock, pretreatment to breakdown or loosen lignin is important step and various approaches have been conducted. For biological pretreatment, we screened Bacillus subtilis KCTC2023 as a potential lignin-degrading bacterium based on veratryl alcohol (VA) oxidation test and the putative heme-containing dye-decolorizing peroxidase was found in the genome of B. subtilis KCTC2023. The peroxidase from B. subtilis KCTC2023 (BsDyP) was capable of oxidizing various substrates and atypically exhibits substrate-dependent optimum temperature: 30°C for dyes (Reactive Blue19 and Reactive Black5) and 50°C for high redox potential substrates (2,2′-azino-bis(3-ethylbenzothiazoline-6-sulphonic acid [ABTS], VA, and veratryl glycerol-β-guaiacyl ether [VGE]) over +1.0 V vs. normal hydrogen electrode. At 50°C, optimum temperature for high redox potential substrates, BsDyP not only showed the highest VA oxidation activity (0.13 Umg−1) among the previously reported bacterial peroxidases but also successfully achieved VGE decomposition by cleaving Cα-Cβ bond in the absence of any oxidative mediator with a specific activity of 0.086 Umg−1 and a conversion rate of 53.5%. Based on our results, BsDyP was identified as the first bacterial peroxidase capable of oxidizing high redox potential lignin-related model compounds, especially VGE, revealing a previously unknown versatility of lignin degrading biocatalyst in nature. PMID:25650125

Ag films deposited on Si and Ti: How the film-substrate interaction influences the nanoscale film morphology

Science.gov (United States)

Ruffino, F.; Torrisi, V.

2017-11-01

Submicron-thick Ag films were sputter deposited, at room temperature, on Si, covered by the native SiO2 layer, and on Ti, covered by the native TiO2 layer, under normal and oblique deposition angle. The aim of this work was to study the morphological differences in the grown Ag films on the two substrates when fixed all the other deposition parameters. In fact, the surface diffusivity of the Ag adatoms is different on the two substrates (higher on the SiO2 surface) due to the different Ag-SiO2 and Ag-TiO2 atomic interactions. So, the effect of the adatoms surface diffusivity, as determined by the adatoms-substrate interaction, on the final film morphology was analyzed. To this end, microscopic analyses were used to study the morphology of the grown Ag films. Even if the homologous temperature prescribes that the Ag film grows on both substrates in the zone I described by the structure zone model some significant differences are observed on the basis of the supporting substrate. In the normal incidence condition, on the SiO2/Si surface a dense close-packed Ag film exhibiting a smooth surface is obtained, while on the TiO2/Ti surface a more columnar film morphology is formed. In the oblique incidence condition the columnar morphology for the Ag film occurs both on SiO2/Si and TiO2/Ti but a higher porous columnar film is obtained on TiO2/Ti due to the lower Ag diffusivity. These results indicate that the adatoms diffusivity on the substrate as determined by the adatom-surface interaction (in addition to the substrate temperature) strongly determines the final film nanostructure.

LOW TEMPERATURE CATHODE SUPPORTED ELECTROLYTES

Energy Technology Data Exchange (ETDEWEB)

Harlan U. Anderson

2000-03-31

This project has three main goals: Thin Films Studies, Preparation of Graded Porous Substrates and Basic Electrical Characterization and Testing of Planar Single Cells. During this time period substantial progress has been made in developing low temperature deposition techniques to produce dense, nanocrystalline yttrium-stabilized zirconia films on both dense oxide and polymer substrates. Progress has been made in the preparation and characterization of thin electrolytes and porous LSM substrates. Both of these tasks are essentially on or ahead of schedule. In our proposal, we suggested that the ZrO{sub 2}/Sc system needed to be considered as a candidate as a thin electrolyte. This was because microcrystalline ZrO{sub 2}/Sc has a significantly higher ionic conductivity than YSZ, particularly at the lower temperatures. As a result, some 0.5 micron thick film of ZrO{sub 2}/16% Sc on an alumina substrate (grain size 20nm) was prepared and the electrical conductivity measured as a function of temperature and oxygen activity. The Sc doped ZrO{sub 2} certainly has a higher conductivity that either 20nm or 2400nm YSZ, however, electronic conductivity dominates the conductivity for oxygen activities below 10{sup -15}. Whereas for YSZ, electronic conductivity is not a problem until the oxygen activity decreases below 10{sup -25}. These initial results show that the ionic conductivity of 20nm YSZ and 20nm ZrO{sub 2}/16% Sc are essentially the same and the enhanced conductivity which is observed for Sc doping in microcrystalline specimens is not observed for the same composition when it is nanocrystalline. In addition they show that the electronic conductivity of Sc doped ZrO{sub 2} is at least two orders of magnitude higher than that observed for YSZ. The conclusion one reaches is that for 0.5 to 1 micron thick nanocrystalline films, Sc doping of ZrO{sub 2} has no benefits compared to YSZ. As a result, electrolyte films of ZrO{sub 2}/Sc should not be considered as candidates

Assessment of water droplet evaporation mechanisms on hydrophobic and superhydrophobic substrates.

Science.gov (United States)

Pan, Zhenhai; Dash, Susmita; Weibel, Justin A; Garimella, Suresh V

2013-12-23

Evaporation rates are predicted and important transport mechanisms identified for evaporation of water droplets on hydrophobic (contact angle ~110°) and superhydrophobic (contact angle ~160°) substrates. Analytical models for droplet evaporation in the literature are usually simplified to include only vapor diffusion in the gas domain, and the system is assumed to be isothermal. In the comprehensive model developed in this study, evaporative cooling of the interface is accounted for, and vapor concentration is coupled to local temperature at the interface. Conjugate heat and mass transfer are solved in the solid substrate, liquid droplet, and surrounding gas. Buoyancy-driven convective flows in the droplet and vapor domains are also simulated. The influences of evaporative cooling and convection on the evaporation characteristics are determined quantitatively. The liquid-vapor interface temperature drop induced by evaporative cooling suppresses evaporation, while gas-phase natural convection acts to enhance evaporation. While the effects of these competing transport mechanisms are observed to counterbalance for evaporation on a hydrophobic surface, the stronger influence of evaporative cooling on a superhydrophobic surface accounts for an overprediction of experimental evaporation rates by ~20% with vapor diffusion-based models. The local evaporation fluxes along the liquid-vapor interface for both hydrophobic and superhydrophobic substrates are investigated. The highest local evaporation flux occurs at the three-phase contact line region due to proximity to the higher temperature substrate, rather than at the relatively colder droplet top; vapor diffusion-based models predict the opposite. The numerically calculated evaporation rates agree with experimental results to within 2% for superhydrophobic substrates and 3% for hydrophobic substrates. The large deviations between past analytical models and the experimental data are therefore reconciled with the

The effect of substrate temperature upon the compositions of Mg and Se in Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Nishio, M.; Ito, R.; Tanaka, K.; Urata, K.; Nakamura, Y.; Tanaka, T. [Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Saito, K.; Guo, Q.X. [Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)

2014-07-15

The growth of Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layers was performed on (100) ZnTe substrate by metalorganic vapour phase epitaxy using dimethylzinc, bis-methylcyclopentadienyl-magnesium, diethyltelluride and diethylselenide. The effects of substrate temperature upon the compositions of Mg and Se have been investigated. The Mg composition in Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer is significantly enhanced at low substrate temperature. Although the Se composition decreases with decreasing the substrate temperature, Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer with a relatively high Se composition of 0.3 is obtainable at a low substrate temperature as low as 380 C. For all the layers, a two-mode behaviour with ZnTe- and MgTe-like longitudinal optical phonon modes is confirmed by Raman scattering. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

Energy Technology Data Exchange (ETDEWEB)

Das, Sayantan; Alford, T. L. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287, USA and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

2013-06-28

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

Substrate temperature effects on reactively sputtered Cr2O3/n-Si heterojunctions

International Nuclear Information System (INIS)

Ocak, Yusuf Selim; Genisel, Mustafa Fatih; Issa, Ali Ahmed; Tombak, Ahmet; Kilicoglu, Tahsin

2016-01-01

To see the effects of substrate temperature on Cr 2 O 3 /n-Si heterojunctions, Cr 2 O 3 thin films were formed on n-Si and glass substrates at 40, 150 and 250 °C by radio frequency (RF) reactive sputtering technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr 2 O 3 /n-Si thin films were analyzed using UV-vis data. The band gaps of the films were compared. The electrical properties of Cr 2 O 3 /n-Si heterojunction were tested by their current voltage ( I-V ) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr 2 O 3 thin film at 250 °C gave better rectification. The characteristic electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage ( C-V ) data were compared with the one calculated from I-V measurements. (paper)

Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

Science.gov (United States)

Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD

Science.gov (United States)

Zhao, Yun; Guo, Yanzhao; Lin, Liangzhen; Zheng, Yuting; Hei, Lifu; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Li, Chengming

2018-06-01

Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of diamonds grown on the different seed substrates was compared. Fluorescence characteristics showed that the sectors of the HPHT seed substrates were obviously partitioned. Raman and absorption spectra showed that the CVD seed substrate produced higher-quality crystals with fewer nitrogen impurities. X-ray topography showed that the HPHT seed substrate had obvious growth sector boundaries, inclusions, dislocations, and stacking faults. The polarization characteristics of HPHT seed substrate were obvious, and the stress distribution was not uniform. When etching HPHT and CVD seed substrates using the same parameters, the etching morphology and extent of different growth sectors of the two substrates differed. Although extended defects were inevitably formed at the interface and propagated in the CVD layer, the dislocation density of a 1 mm-thick CVD layer grown on a CVD seed substrate was only half that of a 1 mm-thick CVD layer grown on an HPHT seed substrate. Therefore, the use of CVD seed substrate enabled the growth of a relatively higher-quality CVD single-crystal diamond.

Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Energy Technology Data Exchange (ETDEWEB)

Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn; Shen, Shanshan; Xu, Jun; Wang, Jing, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn [Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

2016-06-15

Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

Substrate-enhanced superconductivity in Li-decorated graphene

KAUST Repository

Kaloni, Thaneshwor P.

2013-11-01

We investigate the role of the substrate for the strength of the electron-phonon coupling in Li-decorated graphene. We find that the interaction with a h-BN substrate leads to a significant enhancement from to , which corresponds to a 25% increase of the transition temperature from to . The superconducting gaps amount to 1.56 meV (suspended) and 1.98 meV (supported). These findings open up a new route to enhanced superconducting transition temperatures in graphene-based materials by substrate engineering. © 2013 EPLA.

Room-temperature deposition of diamond-like carbon field emitter on flexible substrates

International Nuclear Information System (INIS)

Chen, H.; Iliev, M.N.; Liu, J.R.; Ma, K.B.; Chu, W.-K.; Badi, N.; Bensaoula, A.; Svedberg, E.B.

2006-01-01

Room-temperature fabrication of diamond-like carbon electron field emitters on flexible polyimide substrate is reported. These thin film field emitters are made using an Ar gas cluster ion beam assisted C 6 vapor deposition method. The bond structure of the as-deposited diamond-like carbon film was studied using Raman spectroscopy. The field emission characteristics of the deposited films were also measured. Electron current densities over 15 mA/cm 2 have been recorded under an electrical field of about 65 V/μm. These diamond-like carbon field emitters are easy and inexpensive to fabricate. The results are promising for flexible field-emission fabrication without the need of complex patterning and tip shaping as compared to the Spindt-type field emitters

Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate

International Nuclear Information System (INIS)

Wei Meng; Wang Xiaoliang; Pan Xu; Xiao Hongling; Wang Cuimei; Zhang Minglan; Wang Zhanguo

2011-01-01

This paper investigated the influence of AlGaN buffer growth temperature on strain status and crystal quality of the GaN film on Si(111) sbustrates by metal organic chemical vapor deposition. It was demonstrated by the optical microscopy that AlGaN buffer gorwth temperature had a remarkable effect on compensating tensil stress in top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed crystal quality and surface morphology of the GaN epilayer could be improved through increasing AlGaN buffer growth temperature. 1μm crack-free GaN epilayer on Si (111) substrates was obtained with graded AlGaN buffer layer at optimized temperature of 1050 deg. C. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer.

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

2010-01-01

The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Low Temperature (180°C Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Teng-Hsiang Chang

2014-01-01

Full Text Available This paper describes a new method to grow thin germanium (Ge epilayers (40 nm on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD process. The full width at half maximum (FWHM of the Ge (004 in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.

All-inkjet-printed flexible electronics fabrication on a polymer substrate by low-temperature high-resolution selective laser sintering of metal nanoparticles

International Nuclear Information System (INIS)

Ko, Seung H; Pan Heng; Grigoropoulos, Costas P; Luscombe, Christine K; Frechet, Jean M J; Poulikakos, Dimos

2007-01-01

All-printed electronics is the key technology to ultra-low-cost, large-area electronics. As a critical step in this direction, we demonstrate that laser sintering of inkjet-printed metal nanoparticles enables low-temperature metal deposition as well as high-resolution patterning to overcome the resolution limitation of the current inkjet direct writing processes. To demonstrate this process combined with the implementation of air-stable carboxylate-functionalized polythiophenes, high-resolution organic transistors were fabricated in ambient pressure and room temperature without utilizing any photolithographic steps or requiring a vacuum deposition process. Local thermal control of the laser sintering process could minimize the heat-affected zone and the thermal damage to the substrate and further enhance the resolution of the process. This local nanoparticle deposition and energy coupling enable an environmentally friendly and cost-effective process as well as a low-temperature manufacturing sequence to realize large-area, flexible electronics on polymer substrates

Properties of ZrN films as substrate masks in liquid phase epitaxial lateral overgrowth of compound semiconductors

International Nuclear Information System (INIS)

Dobosz, D.; Zytkiewicz, Z.R.; Jakiela, R.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.; Piotrowski, T.T.; Barcz, A.

2005-01-01

The usefulness of ZrN films as masks for epitaxial lateral overgrowth of GaAs and GaSb by liquid phase epitaxy is studied. It was observed that during the growth process ZrN masks are mechanically stable, they adhere strongly to the substrate and do not show any signs of degradation even at the growth temperature as high as 750 C. Moreover, perfect selectivity of GaAs and GaSb epitaxy was obtained on ZrN masked substrates ensuring the growth wide and thin layers. To study the influence of growth conditions on electrical resistivity of the mask, ZrN films deposited on GaAs substrates were annealed in various atmospheres. It was found that at temperatures higher than about 580 C the ZrN masks become highly resistive when heat-treated in hydrogen flow employed during growth. Usually, LPE growth temperature for GaAs is higher. Thus, ELO growth of GaAs by LPE becomes more difficult, though still possible, if ZrN masks are to be applied as buried electrical contacts. For GaSb ELO layers however, typical LPE growth temperature is about 480 C. This allows us to grow high quality GaSb ELO layers by LPE still preserving high electrical conductivity of ZrN mask. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism

Science.gov (United States)

Ren, Lizhu; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

2014-03-01

Three types of manganese oxide films were grown on MgAl2O4 (001) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) under different growth rates and substrate temperatures. The structural characteristics and chemical compositions of the films were investigated by using in-situ reflection high-energy electron diffraction (RHEED), ex-situ X-ray diffraction, Raman, and X-ray photoelectron spectra (XPS). At a lower substrate temperature (730 K), the epitaxial film tends to form mixed phases with a coexistence of Mn3O4 and Mn5O8 in order to relieve the mismatch-strain. However, at a higher substrate temperature (750 K), all of the films crystallize into Mn3O4; the critical thickness of the film grown under a lower growth rate (7 Å/min) is much larger than that under a high growth rate (10 Å/min). When the film reaches a certain critical thickness, the surface will become fairly rough, and another oriented phase Mn3O4 would crystallize on such a surface.

Adhesive bonding and brazing of nanocrystalline diamond foil onto different substrate materials

Science.gov (United States)

Lodes, Matthias A.; Sailer, Stefan; Rosiwal, Stefan M.; Singer, Robert F.

2013-10-01

Diamond coatings are used in heavily stressed industrial applications to reduce friction and wear. Hot-filament chemical vapour deposition (HFCVD) is the favourable coating method, as it allows a coating of large surface areas with high homogeneity. Due to the high temperatures occurring in this CVD-process, the selection of substrate materials is limited. With the desire to coat light materials, steels and polymers a new approach has been developed. First, by using temperature-stable templates in the HFCVD and stripping off the diamond layer afterwards, a flexible, up to 150 μm thick and free standing nanocrystalline diamond foil (NCDF) can be produced. Afterwards, these NCDF can be applied on technical components through bonding and brazing, allowing any material as substrate. This two-step process offers the possibility to join a diamond layer on any desired surface. With a modified scratch test and Rockwell indentation testing the adhesion strength of NCDF on aluminium and steel is analysed. The results show that sufficient adhesion strength is reached both on steel and aluminium. The thermal stress in the substrates is very low and if failure occurs, cracks grow undercritically. Adhesion strength is even higher for the brazed samples, but here crack growth is critical, delaminating the diamond layer to some extent. In comparison to a sample directly coated with diamond, using a high-temperature CVD interlayer, the brazed as well as the adhesively bonded samples show very good performance, proving their competitiveness. A high support of the bonding layer could be identified as crucial, though in some cases a lower stiffness of the latter might be acceptable considering the possibility to completely avoid thermal stresses which occur during joining at higher temperatures.

Design of a cylindrical LED substrate without radiator

Science.gov (United States)

Tang, Fan; Guo, Zhenning

2017-12-01

To reduce the weight and production costs of light-emitting diode (LED) lamps, we applied the principle of the chimney effect to design a cylindrical LED substrate without a radiator. We built a 3D model by using Solidworks software and applied the flow simulation plug-in to conduct model simulation, thereby optimizing the heat source distribution and substrate thickness. The results indicate that the design achieved optimal cooling with a substrate with an upper extension length of 35 mm, a lower extension length of 8 mm, and a thickness of 1 mm. For a substrate of those dimensions, the highest LED chip temperature was 64.78 °C, the weight of the substrate was 35.09 g, and R jb = 7.00 K/W. If the substrate is powered at 8, 10, and 12 W, its temperature meets LED safety requirements. In physical tests, the highest temperature for a physical 8 W cylindrical LED substrate was 66 °C, which differed by only 1.22 °C from the simulation results, verifying the validity of the simulation. The designed cylindrical LED substrate can be used in high-power LED lamps that do not require radiators. This design is not only excellent for heat dissipation, but also for its low weight, low cost, and simplicity of manufacture.

Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

Science.gov (United States)

Fang, F; Markwitz, A

2009-05-01

Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

Quality improvement of ZnO thin layers overgrown on Si(100 substrates at room temperature by nitridation pretreatment

Directory of Open Access Journals (Sweden)

Peng Wang

2012-06-01

Full Text Available To improve the quality of ZnO thin film overgrown on Si(100 substrate at RT (room temperature, the Si(100 surface was pretreated with different methods. The influence of interface on the overgrown ZnO layers was investigated by atomic force microscopy, photoluminescence and X-ray diffraction. We found that the nitridation pretreatment could significantly improve the quality of RT ZnO thin film through two-fold effects: one was to buffer the big lattice mismatch and ease the stress resulted from heterojunction growth; the other was to balance the interface charge, block the symmetric inheritance from the cubic Si (100 substrate and thus restrain the formation of zincblende phase.

Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

Science.gov (United States)

Zhan, Peng; Wang, Weipeng; Xie, Zheng; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-07-01

Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ˜0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ˜0.44 emu/g (on quartz) to ˜1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.

CrAlN coatings deposited by cathodic arc evaporation at different substrate bias

International Nuclear Information System (INIS)

Romero, J.; Gomez, M.A.; Esteve, J.; Montala, F.; Carreras, L.; Grifol, M.; Lousa, A.

2006-01-01

CrAlN is a good candidate as an alternative to conventional CrN coatings especially for high temperature oxidation-resistance applications. Different CrAlN coatings were deposited on hardened steel substrates by cathodic arc evaporation (CAE) from chromium-aluminum targets in a reactive nitrogen atmosphere at negative substrate bias between - 50 and - 400 V. The negative substrate bias has important effects on the deposition growth rate and crystalline structure. All our coatings presented hardness higher than conventional CrN coatings. The friction coefficient against alumina and tungsten carbide balls was around 0.6. The sliding wear coefficient of the CrAlN coatings was very low while an important wear was observed in the balls before a measurable wear were produced in the coatings. This effect was more pronounced as the negative substrate bias was increased

Effect of substrate interface on the magnetism of supported iron nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Balan, A. [Swiss Light Source, Paul Scherrer Institut (PSI), Villigen CH-5232 (Switzerland); Fraile Rodríguez, A. [Departament de Física Fonamental and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, E-08028 Barcelona (Spain); Vaz, C.A.F.; Kleibert, A.; Nolting, F. [Swiss Light Source, Paul Scherrer Institut (PSI), Villigen CH-5232 (Switzerland)

2015-12-15

In situ X-ray photo-emission electron microscopy is used to investigate the magnetic properties of iron nanoparticles deposited on different single crystalline substrates, including Si(001), Cu(001), W(110), and NiO(001). We find that, in our room temperature experiments, Fe nanoparticles deposited on Si(001) and Cu(001) show both superparamagnetic and magnetically stable (blocked) ferromagnetic states, while Fe nanoparticles deposited on W(110) and NiO(001) show only superparamagnetic behaviour. The dependence of the magnetic behaviour of the Fe nanoparticles on the contact surface is ascribed to the different interfacial bonding energies, higher for W and NiO, and to a possible relaxation of point defects within the core of the nanoparticles on these substrates, that have been suggested to stabilise the ferromagnetic state at room temperature when deposited on more inert surfaces such as Si and Cu. - Highlights: • In situ X-ray photo-emission electron microscopy study on iron nanoparticles. • Magnetically blocked particles are found on Si(001) and Cu(001). • Superparamagnetic particles are found on W(110) and Ni0(001). • The substrate dependent behavior is ascribed to the different bonding energies.

Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

Science.gov (United States)

Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi

2018-05-01

We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

A novel low-temperature-active β-glucosidase from symbiotic Serratia sp. TN49 reveals four essential positions for substrate accommodation.

Science.gov (United States)

Zhou, Junpei; Zhang, Rui; Shi, Pengjun; Huang, Huoqing; Meng, Kun; Yuan, Tiezheng; Yang, Peilong; Yao, Bin

2011-10-01

A 2,373-bp full-length gene (bglA49) encoding a 790-residue polypeptide (BglA49) with a calculated mass of 87.8 kDa was cloned from Serratia sp. TN49, a symbiotic bacterium isolated from the gut of longhorned beetle (Batocera horsfieldi) larvae. The deduced amino acid sequence of BglA49 showed the highest identities of 80.1% with a conceptually translated protein from Pantoea sp. At-9b (EEW02556), 38.3% with the identified glycoside hydrolase (GH) family 3 β-glucosidase from Clostridium stercorarium NCBI 11754 (CAB08072), and sp. G5 (ABL09836) and Paenibacillus sp. C7 (AAX35883). The recombinant enzyme (r-BglA49) was expressed in Escherichia coli and displayed the typical characteristics of low-temperature-active enzymes, such as low temperature optimum (showing apparent optimal activity at 35°C), activity at low temperatures (retaining approximately 60% of its maximum activity at 20°C and approximately 25% at 10°C). Compared with the thermophilic GH 3 β-glucosidase, r-BglA49 had fewer hydrogen bonds and salt bridges and less proline residues. These features might relate to the increased structure flexibility and higher catalytic activity at low temperatures of r-BglA49. The molecular docking study of four GH 3 β-glucosidases revealed five conserved positions contributing to substrate accommodation, among which four positions of r-BglA49 (R192, Y228, D260, and E449) were identified to be essential based on site-directed mutagenesis analysis.

Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

International Nuclear Information System (INIS)

Belmeguenai, M.; Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P.; Gabor, M. S.; Petrisor, T.; Tiusan, C.

2014-01-01

10 nm and 50 nm Co 2 FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T a ), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T a , while the uniaxial anisotropy field is nearly unaffected by T a within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T a . Finally, the FMR linewidth decreases when increasing T a , due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10 −3 and 1.3×10 −3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Science.gov (United States)

Jameel, D. A.; Aziz, M.; Felix, J. F.; Al Saqri, N.; Taylor, D.; Albalawi, H.; Alghamdi, H.; Al Mashary, F.; Henini, M.

2016-11-01

This article reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. In addition, the inhomogeneity of the interface between various GaAs substrates and SPAN is investigated in terms of barrier height and ideality factor by performing I-V measurements at different temperatures (20-420 K). The I-V results indicate that the value of the rectification ratio (IF/IR) at 0.5 V is higher for SPAN/(311)B GaAs samples than for SPAN/(100) GaAs and SPAN/(311)A GaAs samples. Moreover, the barrier height decreases and the ideality factor increases with decreasing temperature for all three heterostructure devices. The high value of mean barrier Φbarb of SPAN/(311)B (calculated from the plots of Φb 0 as a function of 1/2kT) confirms that the GaAs substrate orientation results in an increase of barrier homogeneities. Furthermore, the C-V characteristics were obtained at room temperature. The C-V measurements showed that the carrier distributions at the interface and away from the interface in high index (311) GaAs orientations are more uniform and have better barrier homogeneity than those grown on the conventional (100) GaAs substrates.

Can air-breathing fish be adapted to higher than present temperatures?

DEFF Research Database (Denmark)

Bayley, Mark

Air-breathing in fish is thought to have evolved in environments at lower than present oxygen levels and higher than present temperatures raising the question of whether extant species are adapted to recent temperature regimes or living at sub-optimal temperatures. The air-breathing Pangasionodon...... hypophthalmus inhabits the Mekong river system covering two climate zones during its life cycle and migrating more than 2000 km from hatching in northern Laos to its adult life in the southern delta region. It is a facultative air-breather with well-developed gills and air-breathing organ and an unusual...... circulatory bauplan. Here we examine the question of its optimal temperature through aspects of its cardio respiratory physiology including temperature effects on blood oxygen binding, ventilation and blood gasses, stereological measures of cardiorespiratory system, metabolic rate and growth. Comparing...

Poly-crystallinity of indium-tin-oxide films improved by using simultaneous ion beam and heat treatment of the plastic substrate

International Nuclear Information System (INIS)

Son, Phil Kook; Kim, Tae Hyung; Choi, Suk Won; Gwag, Jin Seog

2012-01-01

The combined treatment effects of an ion beam with directionality and heat of a low temperature on a plastic substrate was investigated as a method to increase the electrical conductivity of indium tinoxide (ITO) films deposited on plastic substrate surfaces at low temperatures. Polyethylene terephthalate (PET) surface treatment by using an ion beam at low temperature (120 .deg. C), which can be applied to plastic substrates, improves the conductivity of ITO films. X-ray diffraction indicates that ITO films deposited on PET surfaces treated simultaneously by using an ion beam and heat of a low temperature have an almost polycrystalline structure even though they have small amorphous party on. As a supplementary measurement, the contact angle showed that the polycrystalline structure was due to a self-assembly effect at the PET surfaces. Consequently, the electrical conductivity of an ITO film deposited by using the proposed technique is three times higher than that of an ITO film treated only with heat of low temperature due to the improved polycrystalline structure.

Poly-crystallinity of indium-tin-oxide films improved by using simultaneous ion beam and heat treatment of the plastic substrate

Science.gov (United States)

Son, Phil Kook; Kim, Taehyung; Choi, Suk-Won; Gwag, Jin Seog

2012-08-01

The combined treatment effects of an ion beam with directionality and heat of a low temperature on a plastic substrate was investigated as a method to increase the electrical conductivity of indiumtin-oxide (ITO) films deposited on plastic substrate surfaces at low temperatures. Polyethylene terephthalate (PET) surface treatment by using an ion beam at low temperature (120 °C), which can be applied to plastic substrates, improves the conductivity of ITO films. X-ray diffraction indicates that ITO films deposited on PET surfaces treated simultaneously by using an ion beam and heat of a low temperature have an almost polycrystalline structure even though they have small amorphous party on. As a supplementary measurement, the contact angle showed that the polycrystalline structure was due to a self-assembly effect at the PET surfaces. Consequently, the electrical conductivity of an ITO film deposited by using the proposed technique is three times higher than that of an ITO film treated only with heat of low temperature due to the improved polycrystalline structure.

Ion beam modification of structural and optical properties of GeO2 thin films deposited at various substrate temperatures using pulsed laser deposition

Science.gov (United States)

Rathore, Mahendra Singh; Vinod, Arun; Angalakurthi, Rambabu; Pathak, A. P.; Singh, Fouran; Thatikonda, Santhosh Kumar; Nelamarri, Srinivasa Rao

2017-11-01

High energy heavy ion irradiation-induced modification of high quality crystalline GeO2 thin films grown at different substrate temperatures ranging from 100 to 500 °C using pulsed laser deposition has been investigated. The pristine films were irradiated with 100 MeV Ag7+ ions at fixed fluence of 1 × 1013 ions/cm2. These pristine and irradiated films have been characterized using X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared and photoluminescence spectroscopy. The XRD and Raman results of pristine films confirm the formation of hexagonal structure of GeO2 films, whereas the irradiation eliminates all the peaks except major GeO2 peak of (101) plane. It is evident from the XRD results that crystallite size changes with substrate temperature and SHI irradiation. The surface morphology of films was studied by AFM. The functional group of pristine and irradiated films was investigated by IR transmission spectra. Pristine films exhibited strong photoluminescence around 342 and 470 nm due to oxygen defects and a red shift in the PL bands is observed after irradiation. Possible mechanism of tuning structural and optical properties of pristine as well as irradiated GeO2 films with substrate temperature and ion beam irradiation has been reported in detail.

Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

Energy Technology Data Exchange (ETDEWEB)

Shimomoto, Kazuma; Ueno, Kohei [Institute of Industrial Science, University of Tokyo (Japan); Kobayashi, Atsushi [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Department of Applied Chemistry, University of Tokyo (Japan); Ohta, Jitsuo [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (JST-CREST), Tokyo (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (JST-CREST), Tokyo (Japan); Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi [Mitsubishi Chemical Group, Science and Technology Research Center, Higashi-Mamiana, Ushiku-shi, Ibaraki (Japan)

2009-05-15

The authors have grown high-quality m -plane In{sub 0.36}Ga{sub 0.64}N (1 anti 100) films on ZnO (1 anti 100) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m-plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two-dimensional mode. X-ray diffraction measurements have revealed that the m-plane InGaN films grow without phase separation reactions at RT. The full-width at half-maximum values of the 1 anti 100 X-ray rocking curves of films with X-ray incident azimuths perpendicular to the c- and a-axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space-mapping has revealed that a 50 nm thick m-plane In{sub 0.36}Ga{sub 0.64}N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

International Nuclear Information System (INIS)

Shimomoto, Kazuma; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi; Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi

2009-01-01

The authors have grown high-quality m -plane In 0.36 Ga 0.64 N (1 anti 100) films on ZnO (1 anti 100) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m-plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two-dimensional mode. X-ray diffraction measurements have revealed that the m-plane InGaN films grow without phase separation reactions at RT. The full-width at half-maximum values of the 1 anti 100 X-ray rocking curves of films with X-ray incident azimuths perpendicular to the c- and a-axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space-mapping has revealed that a 50 nm thick m-plane In 0.36 Ga 0.64 N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of substrate temperature and gas flow ratio on the nanocomposite TiAlBN coating

Energy Technology Data Exchange (ETDEWEB)

Rosli, Z. M., E-mail: azmr@utem.edu.my; Kwan, W. L., E-mail: kwailoon86@gmail.com; Juoi, J. M., E-mail: jariah@utem.edu.my [Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka (Malaysia)

2016-07-19

Nanocomposite TiAlBN (nc-TiAlBN) coatings were successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (R{sub N}), and substrate temperature (T{sub S}). All coatings were deposited on AISI 316 substrates using single Ti-Al-BN hot-pressed disc as a target. The grain size, phases, and chemical composition of the coatings were evaluated using glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). Results showed that the grains size of the deposited nc-TiAlBN coatings were in the range of 3.5 to 5.7 nm and reached a nitride saturation state as early as 15 % R{sub N}. As the nitrogen concentration decreases, boron concentration increased from 9 at.% to 16.17 at.%. and thus, increase the TiB{sub 2} phase within the coatings. The T{sub S}, however, showed no significant effect either on the crystallographic structure, grain size, or in the chemical composition of the deposited nc-TiAlBN coating.

Effect of substrate temperature and gas flow ratio on the nanocomposite TiAlBN coating

International Nuclear Information System (INIS)

Rosli, Z. M.; Kwan, W. L.; Juoi, J. M.

2016-01-01

Nanocomposite TiAlBN (nc-TiAlBN) coatings were successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (R_N), and substrate temperature (T_S). All coatings were deposited on AISI 316 substrates using single Ti-Al-BN hot-pressed disc as a target. The grain size, phases, and chemical composition of the coatings were evaluated using glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). Results showed that the grains size of the deposited nc-TiAlBN coatings were in the range of 3.5 to 5.7 nm and reached a nitride saturation state as early as 15 % R_N. As the nitrogen concentration decreases, boron concentration increased from 9 at.% to 16.17 at.%. and thus, increase the TiB_2 phase within the coatings. The T_S, however, showed no significant effect either on the crystallographic structure, grain size, or in the chemical composition of the deposited nc-TiAlBN coating.

Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y. [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

2015-04-16

In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

Science.gov (United States)

Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.

2011-05-01

Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

Precise micropatterning of silver nanoparticles on plastic substrates

International Nuclear Information System (INIS)

Ammosova, Lena; Jiang, Yu; Suvanto, Mika; Pakkanen, Tapani A.

2017-01-01

Highlights: • Silver ink has been deposited on plastic substrate and silver nanoparticles have been produced. • 3D control allows both ink superimposing and deposition on complicated surfaces. • Polyol method ensures the formation of metallic mircopatterns with high uniformity. • Substrate wettability, ink volume, and sintering temperature influences deposited patterns. - Abstract: Conventional fabrication methods to obtain metal patterns on polymer substrates are restricted by high operating temperature and complex preparation steps. The present study demonstrates a simple yet versatile method for preparation of silver nanoparticle micropatterns on polymer substrates with various surface geometry. With the microworking robot technique, we were able not only to directly structure the surface, but also precisely deposit silver nanoparticle ink on the desired surface location with the minimum usage of ink material. The prepared silver nanoparticle ink, containing silver cations and polyethylene glycol (PEG) as a reducing agent, yields silver nanoparticle micropatterns on plastic substrates at low sintering temperature without any contamination. The influence of the ink behaviour was studied, such as substrate wettability, ink volume, and sintering temperature. The ultraviolet visible (UV–vis), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) measurements revealed the formation of micropatterns with uniformly distributed silver nanoparticles. The prepared patterns are expected to have a broad range of applications in optics, medicine, and sensor devices owing to the unique properties of silver. Furthermore, the deposition of a chemical compound, which is different from the substrate material, not only adds a fourth dimension to the prestructured three-dimensional (3D) surfaces, but also opens new application areas to the conventional surface structures.

Precise micropatterning of silver nanoparticles on plastic substrates

Energy Technology Data Exchange (ETDEWEB)

Ammosova, Lena; Jiang, Yu; Suvanto, Mika; Pakkanen, Tapani A., E-mail: tapani.pakkanen@uef.fi

2017-04-15

Highlights: • Silver ink has been deposited on plastic substrate and silver nanoparticles have been produced. • 3D control allows both ink superimposing and deposition on complicated surfaces. • Polyol method ensures the formation of metallic mircopatterns with high uniformity. • Substrate wettability, ink volume, and sintering temperature influences deposited patterns. - Abstract: Conventional fabrication methods to obtain metal patterns on polymer substrates are restricted by high operating temperature and complex preparation steps. The present study demonstrates a simple yet versatile method for preparation of silver nanoparticle micropatterns on polymer substrates with various surface geometry. With the microworking robot technique, we were able not only to directly structure the surface, but also precisely deposit silver nanoparticle ink on the desired surface location with the minimum usage of ink material. The prepared silver nanoparticle ink, containing silver cations and polyethylene glycol (PEG) as a reducing agent, yields silver nanoparticle micropatterns on plastic substrates at low sintering temperature without any contamination. The influence of the ink behaviour was studied, such as substrate wettability, ink volume, and sintering temperature. The ultraviolet visible (UV–vis), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) measurements revealed the formation of micropatterns with uniformly distributed silver nanoparticles. The prepared patterns are expected to have a broad range of applications in optics, medicine, and sensor devices owing to the unique properties of silver. Furthermore, the deposition of a chemical compound, which is different from the substrate material, not only adds a fourth dimension to the prestructured three-dimensional (3D) surfaces, but also opens new application areas to the conventional surface structures.

Study on the paper substrate room temperature phosphorescence of theobromine, caffeine and theophylline and analytical application

Science.gov (United States)

Chuan, Dong; Yan-Li, Wei; Shao-Min, Shuang

2003-05-01

Paper substrate room temperature phosphorescence (RTP) of theobromine (TB), caffeine (CF) and theophylline (TP) were investigated. The method is based on fast speed quantitative filter paper as substrate and KI-NaAc as heavy atom perturber. Various factors affecting their RTP were discussed in detail. Under the optimum experimental conditions, the linear dynamic range, limit of detection (LOD), and relative standard deviation (R.S.D.) were 14.41˜576.54 ng per spot, 1.14 ng per spot, 4.8% for TB, 5.44˜699.08 ng per spot, 0.78 ng per spot, 1.56% for CF, 7.21˜360.34 ng per spot, 1.80 ng per spot, 3.80% for TP, respectively. The first analytical application for the determination of these compounds was developed. The recovery of standard samples added to commercial products chocolate, tea, coffee and aminophylline is in the range 92.80-106.08%. The proposed method was successfully applied to real sample analysis without separation.

Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates

International Nuclear Information System (INIS)

Yin Xuesong; Tang Wu; Weng Xiaolong; Deng Longjiang

2009-01-01

Amorphous or weakly crystalline indium tin oxide (ITO) thin film samples have been prepared on polymethylmethacrylate and polyethylene terephthalate substrates by RF-magnetron sputtering at a low substrate temperature. The surface morphological and electrical properties of the ITO layers were measured by atomic force microscopy (AFM) and a standard four-point probe measurement. The effect of surface morphology on the resistivity of ITO thin films was studied, which presented some different variations from crystalline films. Then, a simplified film system model, including the substrate, continuous ITO layer and ITO surface grain, was proposed to deal with these correlations. Based on this thin film model and the AFM images, a quadratic potential was introduced to simulate the characteristics of the ITO surface morphology, and the classical Kronig-Penney model, the semiconductor electrical theory and the modified Neugebauer-Webb model were used to expound the detailed experimental results. The modelling equation was highly in accord with the experimental variations of the resistivity on the characteristics of the surface morphology.

Reliability testing of wire-bond at high temperature storage: Abstract for HITEN 2007, The International Conference on High Temperature Electronics, 17-19 September 2007 in Oxford, United Kingdom

OpenAIRE

Schelle, B.; Arik, B.; Klieber, R.; Trieu, H.-K.

2007-01-01

In integrated circuits chips are connected to the substrate with an electrical bonding. Generally Au bondwires are used on Al chip-pads with a Ni substrate; - denoted as an Al/Au/Ni system. The system can be used up to 150°C. At higher temperatures up to 250°C the system fails due to intermetallic phase growth also known as 'purple pest'. In this talk we present an alternative to the Au/Au/Au system for high temperature assembly, as a gold metallization on the chip side is expensive and not c...

Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break

Energy Technology Data Exchange (ETDEWEB)

Piallat, Fabien, E-mail: fabien.piallat@gmail.com [STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles (France); CEA, LETI, Campus Minatec, F-38054 Grenoble (France); LTM-CNRS, 17 rue des Martyrs, 38054 Grenoble (France); Gassilloud, Remy [CEA, LETI, Campus Minatec, F-38054 Grenoble (France); Caubet, Pierre [STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles (France); Vallée, Christophe [LTM-CNRS, 17 rue des Martyrs, 38054 Grenoble (France)

2016-09-15

Due to the reduction of the thickness of the layers used in the advanced technology nodes, there is a growing importance of the surface phenomena in the definition of the general properties of the materials. One of the least controlled and understood phenomenon is the oxidation of metals after deposition, at the vacuum break. In this study, the influence of the sample temperature at vacuum break on the oxidation level of TiN deposited by metalorganic chemical vapor deposition is investigated. TiN resistivity appears to be lower for samples which underwent vacuum break at high temperature. Using X-ray photoelectron spectrometry analysis, this change is correlated to the higher oxidation of the TiN layer. Moreover, angle resolved XPS analysis reveals that higher is the temperature at the vacuum break, higher is the surface oxidation of the sample. This surface oxidation is in turn limiting the diffusion of oxygen in the volume of the layer. Additionally, evolution of TiN layers resistivity was monitored in time and it shows that resistivity increases until a plateau is reached after about 10 days, with the lowest temperature at vacuum break resulting in the highest increase, i.e., the resistivity of the sample released to atmosphere at high temperature increased by a factor 1.7 whereas the resistivity of the sample cooled down under vacuum temperature increased by a factor 2.7.

Forest litter crickets prefer higher substrate moisture for oviposition: Evidence from field and lab experiments.

Science.gov (United States)

de Farias-Martins, Fernando; Sperber, Carlos Frankl; Albeny-Simões, Daniel; Breaux, Jennifer Ann; Fianco, Marcos; Szinwelski, Neucir

2017-01-01

For insects, choosing a favorable oviposition site is a type of parental care, as far as it increases the fitness of its offspring. Niche theory predicts that crickets should show a bell-shaped oviposition response to substrate moisture. However, lab experiments with mole crickets showed a linear oviposition response to substrate moisture. Studies with the house cricket Acheta domesticus also showed a linear juvenile body growth response to water availability, thus adult ovipositing females should respond positively to substrate moisture. We used a field experiment to evaluate the relationship between oviposition preference and substrate moisture in forest litter-dwelling cricket species. We also evaluated oviposition responses to substrate moisture level in Ubiquepuella telytokous, the most abundant litter cricket species in our study area, using a laboratory study. We offered cotton substrate for oviposition which varied in substrate moisture level from zero (i.e., dry) to maximum water absorption capacity. We used two complementary metrics to evaluate oviposition preference: (i) presence or absence of eggs in each sampling unit as binary response variable, and (ii) number of eggs oviposited per sampling unit as count response variable. To test for non-linear responses, we adjusted generalized additive models (GAMM) with mixed effects. We found that both cricket oviposition probability and effort (i.e., number of eggs laid) increased linearly with substrate moisture in the field experiment, and for U. telytokous in the lab experiment. We discarded any non-linear responses. Our results demonstrate the importance of substrate moisture as an ecological niche dimension for litter crickets. This work bolsters knowledge of litter cricket life history association with moisture, and suggests that litter crickets may be particularly threatened by changes in climate that favor habitat drying.

Temperature and substrate controls on intra-annual variation in ecosystem respiration in two subarctic vegetation types

DEFF Research Database (Denmark)

Grogan, Paul; Jonasson, Sven Evert

2005-01-01

significantly to ecosystem respiration during most phases of winter and summer in the two vegetation types. Ecosystem respiration rates through the year did not differ significantly between vegetation types despite substantial differences in biomass pools, soil depth and temperature regime. Most (76...... contributions of bulk soil organic matter and plant-associated carbon pools to ecosystem respiration is critical to predicting the response of arctic ecosystem net carbon balance to climate change. In this study, we determined the variation in ecosystem respiration rates from birch forest understory and heath......-92%) of the intra-annual variation in ecosystem respiration rates from these two common mesic subarctic ecosystems was explained using a first-order exponential equation relating respiration to substrate chemical quality and soil temperature. Removal of plants and their current year's litter significantly reduced...

Substrate independent approach for synthesis of graphene platelet networks

Science.gov (United States)

Shashurin, A.; Fang, X.; Zemlyanov, D.; Keidar, M.

2017-06-01

Graphene platelet networks (GPNs) comprised of randomly oriented graphene flakes two to three atomic layers thick are synthesized using a novel plasma-based approach. The approach uses a substrate capable of withstanding synthesis temperatures around 800 °C, but is fully independent of the substrate material. The synthesis occurs directly on the substrate surface without the necessity of any additional steps. GPNs were synthesized on various substrate materials including silicon (Si), thermally oxidized Si (SiO2), molybdenum (Mo), nickel (Ni) and copper (Cu), nickel-chromium (NiCr) alloy and alumina ceramics (Al2O3). The mismatch between the atomic structures of sp2 honeycomb carbon networks and the substrate material is fully eliminated shortly after the synthesis initiation, namely when about 100 nm thick deposits are formed on the substrate. GPN structures synthesized on a substrate at a temperature of about 800 °C are significantly more porous in comparison to the much denser packed amorphous carbon deposits synthesized at lower temperatures. The method proposed here can potentially revolutionize the area of electrochemical energy storage by offering a single-step direct approach for the manufacture of graphene-based electrodes for non-Faradaic supercapacitors. Mass production can be achieved using this method if a roll-to-roll system is utilized.

Properties of rapidly solidified Fe-Cr-Al ribbons for the use as automotive exhaust gas catalyst substrates

International Nuclear Information System (INIS)

Emmerich, K.

1993-01-01

Metallic honeycomb structures are used as catalyst substrates in automotive exhaust gas systems. This application requires an outstanding corrosion resistance at elevated temperatures of the substrate material. Technical improvements can be achieved by the use of rapid solidification technology for the production of the Fe-Cr-Al ribbons since the Al content can be substantially increased from about 5% Al in the conventionally rolled material to about 12% Al in the rapid solidified ribbon. As a result the lifetime of the ribbon in a higher-temperature corrosion environment is drastically increased. In addition the scale/metal adherance is improved. The impediment of recrystallization in the rapidly solidified ribbons prevents an embrittlement even in carbonizing atmospheres. (orig.)

A highly sensitive solid substrate room temperature phosphorimetry for carbaryl detection based on its activating effect on NaIO4 oxidizing fluorescein.

Science.gov (United States)

Liu, Jiaming; Huang, Qitong; Liu, Zhen-bo; Lin, Xiaofeng; Zhang, Li-Hong; Lin, Chang-Qing; Zheng, Zhi-Yong

2014-11-01

Fluorescein (HFin) could emit strong and stable room temperature phosphorescence (RTP) signal on polyamide membrane (PAM) using Pb(2+) as the ion perturber. Carbaryl could activate effect on NaIO4 oxidating HFin, which caused the RTP signal of the system to quench sharply. The phosphorescence intensity (ΔI p) of activating system higher 3.3 times (119.4/36.0) than that of non-activating system, and is directly proportional to the content of carbaryl. Thus, an activating solid substrate room temperature phosphorimetry (SSRTP) for carbaryl detection has been established. This sensitive (the limit of quantification (LOQ) was 2.0 × 10(-13) g mL(-1)), selective, simple and rapid method has been applied to determine trace carbaryl in water samples with the results consisting with those obtained by fluorimetry, showing its high accuracy. The apparent activation energy (E) and rate constant (k) of this activating reaction were 20.77 kJ mol(-1) and 1.85 × 10(-4) s(-1), respectively. Meanwhile, the mechanism of activating SSRTP for carbaryl detection was also discussed using infrared spectra (IR).

(In)GaSb/AlGaSb quantum wells grown on Si substrates

International Nuclear Information System (INIS)

Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

2007-01-01

We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems. The measured ground state energy of each QW matched well with the theoretical value calculated by solving the Schroedinger equation for a finite potential QW. The temperature dependence of the PL intensity showed large activation energy (∼ 77.6 meV) from QW. The results indicated that the fabricated QW structure had a high crystalline quality, and the GaSb QW on Si for optical devices operating at temperatures higher than room temperature will be expected

Phonon scattering in graphene over substrate steps

International Nuclear Information System (INIS)

Sevinçli, H.; Brandbyge, M.

2014-01-01

We calculate the effect on phonon transport of substrate-induced bends in graphene. We consider bending induced by an abrupt kink in the substrate, and provide results for different step-heights and substrate interaction strengths. We find that individual substrate steps reduce thermal conductance in the range between 5% and 47%. We also consider the transmission across linear kinks formed by adsorption of atomic hydrogen at the bends and find that individual kinks suppress thermal conduction substantially, especially at high temperatures. Our analysis show that substrate irregularities can be detrimental for thermal conduction even for small step heights.

Co{sub 2}FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

Energy Technology Data Exchange (ETDEWEB)

Belmeguenai, M., E-mail: belmeguenai.mohamed@univ-paris13.fr; Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P. [LSPM (CNRS-UPR 3407), 99 avenue Jean-Baptiste Clément, Université Paris 13, 93430 Villetaneuse (France); Gabor, M. S., E-mail: mihai.gabor@phys.utcluj.ro; Petrisor, T. [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Str. Memorandumului No. 28 RO-400114 Cluj-Napoca (Romania); Tiusan, C. [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Str. Memorandumului No. 28 RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F–54506 Vandoeuvre (France)

2014-01-28

10 nm and 50 nm Co{sub 2}FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T{sub a}), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T{sub a}, while the uniaxial anisotropy field is nearly unaffected by T{sub a} within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T{sub a}. Finally, the FMR linewidth decreases when increasing T{sub a}, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10{sup −3} and 1.3×10{sup −3} for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

The effect of substrate microstructure on high temperature oxidation of Zr alloy

International Nuclear Information System (INIS)

Li, H.; Lin, J.; Szpunar, J.

2005-01-01

'Full text:' Specimens with various substrate microstructures of Zr-2.5Nb, Zircaloy 4 and pure Zr have been oxidized at 500C in air. Oxidation kinetics is measured and the microstructures of both oxide and substrate are analyzed. The difference in oxidation kinetics among various specimens is significant. This difference is explained by the distribution of oxide grain size, grain shape and grain boundary, which are controlled by substrate grain size and β phase distribution. The previously proposed model of Zr oxidation is used to predict oxidation kinetics and oxide microstructure from substrate microstructure. Computer simulation based on the model is performed and simulation results are compared with the experimental results. (author)

Temperature, Crystalline Phase and Influence of Substrate Properties in Intense Pulsed Light Sintering of Copper Sulfide Nanoparticle Thin Films.

Science.gov (United States)

Dexter, Michael; Gao, Zhongwei; Bansal, Shalu; Chang, Chih-Hung; Malhotra, Rajiv

2018-02-02

Intense Pulsed Light sintering (IPL) uses pulsed, visible light to sinter nanoparticles (NPs) into films used in functional devices. While IPL of chalcogenide NPs is demonstrated, there is limited work on prediction of crystalline phase of the film and the impact of optical properties of the substrate. Here we characterize and model the evolution of film temperature and crystalline phase during IPL of chalcogenide copper sulfide NP films on glass. Recrystallization of the film to crystalline covellite and digenite phases occurs at 126 °C and 155 °C respectively within 2-7 seconds. Post-IPL films exhibit p-type behavior, lower resistivity (~10 -3 -10 -4  Ω-cm), similar visible transmission and lower near-infrared transmission as compared to the as-deposited film. A thermal model is experimentally validated, and extended by combining it with a thermodynamic approach for crystal phase prediction and via incorporating the influence of film transmittivity and optical properties of the substrate on heating during IPL. The model is used to show the need to a-priori control IPL parameters to concurrently account for both the thermal and optical properties of the film and substrate in order to obtain a desired crystalline phase during IPL of such thin films on paper and polycarbonate substrates.

Thermal oxidation of seeds for the hydrothermal growth of WO3 nanorods on ITO glass substrate

International Nuclear Information System (INIS)

Ng, Chai Yan; Abdul Razak, Khairunisak; Lockman, Zainovia

2015-01-01

This work reports a simple seed formation method for the hydrothermal growth of tungsten oxide (WO 3 ) nanorods. A WO 3 seed layer was prepared by thermal oxidation, where a W-sputtered substrate was heated and oxidized in a furnace. Oxidation temperatures and periods were varied at 400–550 °C and 5–60 min, respectively, to determine an appropriate seed layer for nanorod growth. Thermal oxidation at 500 °C for 15 min was found to produce a seed layer with sufficient crystallinity and good adhesion to the substrate. These properties prevented the seed from peeling off during the hydrothermal process, thereby allowing nanorod growth on the seed. The nanorod film showed better electrochromic behavior (higher current density of − 1.11 and + 0.65 mA cm −2 ) than compact film (lower current density of − 0.54 and + 0.28 mA cm −2 ). - Highlights: • A simple seed formation method (thermal oxidation) on sputtered W film is reported. • Crystalline seed with good adhesion to substrate is required for nanorod growth. • The appropriate temperature and period for seed formation were 500 °C and 15 min. • WO 3 nanorods exhibited higher electrochromic current density than WO 3 compact film.

Ion implantation methods for semiconductor substrates

International Nuclear Information System (INIS)

Matsushita, T.; Mamine, T.; Hayashi, H.; Nishiyama, K.

1980-01-01

A method of ion implantation for controlling the life time of minority carriers in a semiconductor substrate and hence to reduce the temperature dependency of the life time, comprises implanting iron ions into an N type semiconductor substrate with a dosage of 10 10 to 10 15 ions cm -2 , and then heat-treating the implanted substrate at 850 0 to 1250 0 C. The method is applicable to the production of diodes, transistors, Si controlled rectifiers and gate controlled switching devices. (author)

Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

Science.gov (United States)

Qui, Y.; Uhl, D.; Keo, S.

2003-01-01

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

A liquid aluminum corrosion resistance surface on steel substrate

International Nuclear Information System (INIS)

Wang Deqing; Shi Ziyuan; Zou Longjiang

2003-01-01

The process of hot dipping pure aluminum on a steel substrate followed by oxidation was studied to form a surface layer of aluminum oxide resistant to the corrosion of aluminum melt. The thickness of the pure aluminum layer on the steel substrate is reduced with the increase in temperature and time in initial aluminizing, and the thickness of the aluminum layer does not increase with time at given temperature when identical temperature and complete wetting occur between liquid aluminum and the substrate surface. The thickness of the Fe-Al intermetallic layer on the steel base is increased with increasing bath temperature and time. Based on the experimental data and the mathematics model developed by the study, a maximum exists in the thickness of the Fe-Al intermetallic at certain dipping temperature. X-ray diffraction (XRD) and energy dispersive X-ray (EDX) analysis reveals that the top portion of the steel substrate is composed of a thin layer of α-Al 2 O 3 , followed by a thinner layer of FeAl 3 , and then a much thicker one of Fe 2 Al 5 on the steel base side. In addition, there is a carbon enrichment zone in diffusion front. The aluminum oxide surface formed on the steel substrate is in perfect condition after corrosion test in liquid aluminum at 750 deg. C for 240 h, showing extremely good resistance to aluminum melt corrosion

Thermal Effect of Ceramic Substrate on Heat Distribution in Thermoelectric Generators

DEFF Research Database (Denmark)

Kolaei, Alireza Rezania; Rosendahl, Lasse

2012-01-01

in the heat sink, a parallel microchannel heat sink is applied to a real TEG. The focus of this study is a discussion of the temperature difference variation between the cold/hot sides of the TEG legs versus the variation of the thermal conductivity of the ceramic substrate and the thickness of the substrate...... that the temperature difference is affected remarkably by the pressure drops in the heat sink, the thermal conductivity of the ceramic substrate, and the thickness of the substrate on the hot side....

Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

Science.gov (United States)

Akazawa, Housei; Ueno, Yuko

2014-10-01

We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

Higher-resolution selective metallization on alumina substrate by laser direct writing and electroless plating

International Nuclear Information System (INIS)

Lv, Ming; Liu, Jianguo; Wang, Suhuan; Ai, Jun; Zeng, Xiaoyan

2016-01-01

Graphical abstract: - Highlights: • Mechanisms of laser direct writing and electroless plating were studied. • Active seeds in laser-irradiated zone and laser-affected zone were found to be different. • A special chemical cleaning method with aqua regia was taken. • Higher-resolution copper patterns on alumina ceramic were obtained conveniently. - Abstract: How to fabricate conductive patterns on ceramic boards with higher resolution is a challenge in the past years. The fabrication of copper patterns on alumina substrate by laser direct writing and electroless copper plating is a low cost and high efficiency method. Nevertheless, the lower resolution limits its further industrial applications in many fields. In this report, the mechanisms of laser direct writing and electroless copper plating were studied. The results indicated that as the decomposed products of precursor PdCl_2 have different chemical states respectively in laser-irradiated zone (LIZ) and laser-affected zone (LAZ). This phenomenon was utilized and a special chemical cleaning method with aqua regia solution was taken to selectively remove the metallic Pd in LAZ, while kept the PdO in LIZ as the only active seeds. As a result, the resolution of subsequent copper patterns was improved significantly. This technique has a great significance to develop the microelectronics devices.

Kinetic Modeling of Corn Fermentation with S. cerevisiae Using a Variable Temperature Strategy

Directory of Open Access Journals (Sweden)

Augusto C. M. Souza

2018-04-01

Full Text Available While fermentation is usually done at a fixed temperature, in this study, the effect of having a controlled variable temperature was analyzed. A nonlinear system was used to model batch ethanol fermentation, using corn as substrate and the yeast Saccharomyces cerevisiae, at five different fixed and controlled variable temperatures. The lower temperatures presented higher ethanol yields but took a longer time to reach equilibrium. Higher temperatures had higher initial growth rates, but the decay of yeast cells was faster compared to the lower temperatures. However, in a controlled variable temperature model, the temperature decreased with time with the initial value of 40 ∘ C. When analyzing a time window of 60 h, the ethanol production increased 20% compared to the batch with the highest temperature; however, the yield was still 12% lower compared to the 20 ∘ C batch. When the 24 h’ simulation was analyzed, the controlled model had a higher ethanol concentration compared to both fixed temperature batches.

Kinetic Modeling of Corn Fermentation with S. cerevisiae Using a Variable Temperature Strategy.

Science.gov (United States)

Souza, Augusto C M; Mousaviraad, Mohammad; Mapoka, Kenneth O M; Rosentrater, Kurt A

2018-04-24

While fermentation is usually done at a fixed temperature, in this study, the effect of having a controlled variable temperature was analyzed. A nonlinear system was used to model batch ethanol fermentation, using corn as substrate and the yeast Saccharomyces cerevisiae , at five different fixed and controlled variable temperatures. The lower temperatures presented higher ethanol yields but took a longer time to reach equilibrium. Higher temperatures had higher initial growth rates, but the decay of yeast cells was faster compared to the lower temperatures. However, in a controlled variable temperature model, the temperature decreased with time with the initial value of 40 ∘ C. When analyzing a time window of 60 h, the ethanol production increased 20% compared to the batch with the highest temperature; however, the yield was still 12% lower compared to the 20 ∘ C batch. When the 24 h’ simulation was analyzed, the controlled model had a higher ethanol concentration compared to both fixed temperature batches.

EVAPORATIVE DROPLETS IN ONE-COMPONENT FLUIDS DRIVEN BY THERMAL GRADIENTS ON SOLID SUBSTRATES

KAUST Repository

Xu, Xinpeng; Qian, Tiezheng

2013-01-01

A continuum hydrodynamic model is presented for one-component liquid-gas flows on nonisothermal solid substrates. Numerical simulations are carried out for evaporative droplets moving on substrates with thermal gradients. For droplets in one-component fluids on heated/cooled substrates, the free liquid-gas interfaces are nearly isothermal. Consequently, a thermal singularity occurs at the contact line while the Marangoni effect due to interfacial temperature variation is suppressed. Through evaporation/condensation near the contact line, the thermal singularity makes the contact angle increase with the increasing substrate temperature. Due to this effect, droplets will move toward the cold end on substrates with thermal gradients. The droplet migration velocity is found to be proportional to the change of substrate temperature across the droplet. It follows that for two droplets of different sizes on a substrate with temperature gradient, the larger droplet moves faster and will catch up with the smaller droplet ahead. As soon as they touch, they coalesce rapidly into an even larger droplet that will move even faster. © 2013 World Scientific Publishing Company.

EVAPORATIVE DROPLETS IN ONE-COMPONENT FLUIDS DRIVEN BY THERMAL GRADIENTS ON SOLID SUBSTRATES

KAUST Repository

Xu, Xinpeng

2013-03-20

A continuum hydrodynamic model is presented for one-component liquid-gas flows on nonisothermal solid substrates. Numerical simulations are carried out for evaporative droplets moving on substrates with thermal gradients. For droplets in one-component fluids on heated/cooled substrates, the free liquid-gas interfaces are nearly isothermal. Consequently, a thermal singularity occurs at the contact line while the Marangoni effect due to interfacial temperature variation is suppressed. Through evaporation/condensation near the contact line, the thermal singularity makes the contact angle increase with the increasing substrate temperature. Due to this effect, droplets will move toward the cold end on substrates with thermal gradients. The droplet migration velocity is found to be proportional to the change of substrate temperature across the droplet. It follows that for two droplets of different sizes on a substrate with temperature gradient, the larger droplet moves faster and will catch up with the smaller droplet ahead. As soon as they touch, they coalesce rapidly into an even larger droplet that will move even faster. © 2013 World Scientific Publishing Company.

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

International Nuclear Information System (INIS)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

2012-01-01

Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Directory of Open Access Journals (Sweden)

Skonieczny R.

2016-09-01

Full Text Available The cobalt phthalocyanine (CoPc thin films (300 nm thick deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing of metallophthalocyanine (α and β form from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

Adhesion of rhodium films on metallic substrates

International Nuclear Information System (INIS)

Marot, L.; Covarel, G.; Tuilier, M.-H.; Steiner, R.; Oelhafen, P.

2008-01-01

Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength

Adhesion of rhodium films on metallic substrates

Energy Technology Data Exchange (ETDEWEB)

Marot, L. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)], E-mail: laurent.marot@unibas.ch; Covarel, G.; Tuilier, M.-H. [Laboratoire Mecanique, Materiaux et Procedes de Fabrication, Pole STIC-SPI-Math 61 rue Albert Camus, Universite de Haute-Alsace, F-68093 - Mulhouse Cedex (France); Steiner, R.; Oelhafen, P. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

2008-09-01

Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength.

Diamond film growth with modification properties of adhesion between substrate and diamond film

Directory of Open Access Journals (Sweden)

Setasuwon P.

2004-03-01

Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

Internal friction study of microplasticity of aluminum thin films on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Nishio, Y.; Tanahashi, K.; Asano, S. [Nagoya Institute of Technology, Nagoya (Japan)

1995-12-01

Internal friction in aluminum thin films 0.2 to 2.0 {mu}m thick on silicon substrates has been investigated between 180 and 360 K as a function of strain amplitude by means of a free-decay method of flexural vibration. According to the constitutive equation, the internal friction in the film alone can be evaluated separately from the data on the film/substrate composite. The amplitude-dependent part of internal friction in aluminum films is found in the strain range approximately two orders of magnitude higher than that for bulk aluminum. On the basis of the microplasticity theory, the amplitude-dependent internal friction can be converted into the plastic strain as a function of the effective stress on dislocation motion. The mechanical responses thus obtained for aluminum films show that the plastic strain of the order of 10-9 in creases nonlinearly with increasing stress. These curves tend to shift to a higher stress with decreasing film thickness and also with decreasing temperature, both indicating a suppression of the microplastic deformation. At all temperatures examined, the microflow stress at a constant level of the plastic strain varies inversely with the film thickness, which qualitatively agrees with the variation in macroscopic yield stress. 36 refs., 7 figs.

Towards an Integrated QR Code Biosensor: Light-Driven Sample Acquisition and Bacterial Cellulose Paper Substrate.

Science.gov (United States)

Yuan, Mingquan; Jiang, Qisheng; Liu, Keng-Ku; Singamaneni, Srikanth; Chakrabartty, Shantanu

2018-06-01

This paper addresses two key challenges toward an integrated forward error-correcting biosensor based on our previously reported self-assembled quick-response (QR) code. The first challenge involves the choice of the paper substrate for printing and self-assembling the QR code. We have compared four different substrates that includes regular printing paper, Whatman filter paper, nitrocellulose membrane and lab synthesized bacterial cellulose. We report that out of the four substrates bacterial cellulose outperforms the others in terms of probe (gold nanorods) and ink retention capability. The second challenge involves remote activation of the analyte sampling and the QR code self-assembly process. In this paper, we use light as a trigger signal and a graphite layer as a light-absorbing material. The resulting change in temperature due to infrared absorption leads to a temperature gradient that then exerts a diffusive force driving the analyte toward the regions of self-assembly. The working principle has been verified in this paper using assembled biosensor prototypes where we demonstrate higher sample flow rate due to light induced thermal gradients.

Quality improvement of organic thin films deposited on vibrating substrates

Energy Technology Data Exchange (ETDEWEB)

Paredes, Y.A.; Caldas, P.G.; Prioli, R.; Cremona, M., E-mail: cremona@fis.puc-rio.br

2011-12-30

Most of the Organic Light-Emitting Diodes (OLEDs) have a multilayered structure composed of functional organic layers sandwiched between two electrodes. Thin films of small molecules are generally deposited by thermal evaporation onto glass or other rigid or flexible substrates. The interface state between two organic layers in OLED device depends on the surface morphology of the layers and affects deeply the OLED performance. The morphology of organic thin films depends mostly on substrate temperature and deposition rate. Generally, the control of the substrate temperature allows improving the quality of the deposited films. For organic compounds substrate temperature cannot be increased too much due to their poor thermal stability. However, studies in inorganic thin films indicate that it is possible to modify the morphology of a film by using substrate vibration without increasing the substrate temperature. In this work, the effect of the resonance vibration of glass and silicon substrates during thermal deposition in high vacuum environment of tris(8-quinolinolate)aluminum(III) (Alq{sub 3}) and N,N Prime -Bis(naphthalene-2-yl)-N,N Prime -bis(phenyl)-benzidine ({beta}-NPB) organic thin films with different deposition rates was investigated. The vibration used was in the range of hundreds of Hz and the substrates were kept at room temperature during the process. The nucleation and subsequent growth of the organic films on the substrates have been studied by atomic force microscopy technique. For Alq{sub 3} and {beta}-NPB films grown with 0.1 nm/s as deposition rate and using a frequency of 100 Hz with oscillation amplitude of some micrometers, the results indicate a reduction of cluster density and a roughness decreasing. Moreover, OLEDs fabricated with organic films deposited under these conditions improved their power efficiency, driven at 4 mA/cm{sup 2}, passing from 0.11 lm/W to 0.24 lm/W with an increase in their luminance of about 352 cd/m{sup 2

Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

International Nuclear Information System (INIS)

Xiao, Yu; Gao, Fangyuan; Dong, Guobo; Guo, Tingting; Liu, Qirong; Ye, Di; Diao, Xungang

2014-01-01

Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Ω/square, a lowest resistivity of 3.61 × 10 −4 Ω cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (μ) and carrier concentration (n) was interpreted by a functional relation of μ ∼ n −0.127 , which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. - Highlights: • ITO thin films were grown on PET substrates by DC facing target sputtering system. • All the films were prepared at room temperature and exhibited amorphous structure. • Highly conductive and transparent ITO thin films were obtained. • The dominant ionized donor scattering mechanism was suggested

Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

Energy Technology Data Exchange (ETDEWEB)

Xiao, Yu [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Gao, Fangyuan, E-mail: gaofangyuan@buaa.edu.cn [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Dong, Guobo; Guo, Tingting; Liu, Qirong [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Ye, Di [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100191 (China); Diao, Xungang [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China)

2014-04-01

Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Ω/square, a lowest resistivity of 3.61 × 10{sup −4} Ω cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (μ) and carrier concentration (n) was interpreted by a functional relation of μ ∼ n{sup −0.127}, which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. - Highlights: • ITO thin films were grown on PET substrates by DC facing target sputtering system. • All the films were prepared at room temperature and exhibited amorphous structure. • Highly conductive and transparent ITO thin films were obtained. • The dominant ionized donor scattering mechanism was suggested.

Thermal oxidation of seeds for the hydrothermal growth of WO{sub 3} nanorods on ITO glass substrate

Energy Technology Data Exchange (ETDEWEB)

Ng, Chai Yan [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia); Department of Mechanical and Material Engineering, Lee Kong Chian Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Jalan Sungai Long, Bandar Sungai Long, Cheras, 43000 Kajang, Selangor (Malaysia); Abdul Razak, Khairunisak, E-mail: khairunisak@usm.my [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia); NanoBiotechnology Research and Innovation (NanoBRI), Institute for Research in Molecular Medicine (INFORMM), Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lockman, Zainovia, E-mail: zainovia@usm.my [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia)

2015-11-30

This work reports a simple seed formation method for the hydrothermal growth of tungsten oxide (WO{sub 3}) nanorods. A WO{sub 3} seed layer was prepared by thermal oxidation, where a W-sputtered substrate was heated and oxidized in a furnace. Oxidation temperatures and periods were varied at 400–550 °C and 5–60 min, respectively, to determine an appropriate seed layer for nanorod growth. Thermal oxidation at 500 °C for 15 min was found to produce a seed layer with sufficient crystallinity and good adhesion to the substrate. These properties prevented the seed from peeling off during the hydrothermal process, thereby allowing nanorod growth on the seed. The nanorod film showed better electrochromic behavior (higher current density of − 1.11 and + 0.65 mA cm{sup −2}) than compact film (lower current density of − 0.54 and + 0.28 mA cm{sup −2}). - Highlights: • A simple seed formation method (thermal oxidation) on sputtered W film is reported. • Crystalline seed with good adhesion to substrate is required for nanorod growth. • The appropriate temperature and period for seed formation were 500 °C and 15 min. • WO{sub 3} nanorods exhibited higher electrochromic current density than WO{sub 3} compact film.

Yield and cold storage of Trichoderma conidia is influenced by substrate pH and storage temperature.

Science.gov (United States)

Steyaert, Johanna M; Chomic, Anastasia; Nieto-Jacobo, Maria; Mendoza-Mendoza, Artemio; Hay, Amanda J; Braithwaite, Mark; Stewart, Alison

2017-05-01

In this study we examined the influence of the ambient pH during morphogenesis on conidial yield of Trichoderma sp. "atroviride B" LU132 and T. hamatum LU593 and storage at low temperatures. The ambient pH of the growth media had a dramatic influence on the level of Trichoderma conidiation and this was dependent on the strain and growth media. On malt-extract agar, LU593 yield decreased with increasing pH (3-6), whereas yield increased with increasing pH for LU132. During solid substrate production the reverse was true for LU132 whereby yield decreased with increasing pH. The germination potential of the conidia decreased significantly over time in cold storage and the rate of decline was a factor of the strain, pH during morphogenesis, growth media, and storage temperature. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

Science.gov (United States)

Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

2017-03-01

Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

Temperature dependent lattice constant of InSb above room temperature

Science.gov (United States)

Breivik, Magnus; Nilsen, Tron Arne; Fimland, Bjørn-Ove

2013-10-01

Using temperature dependent X-ray diffraction on two InSb single crystalline substrates, the bulk lattice constant of InSb was determined between 32 and 325 °C. A polynomial function was fitted to the data: a(T)=6.4791+3.28×10-5×T+1.02×10-8×T2 Å (T in °C), which gives slightly higher values than previously published (which go up to 62 °C). From the fit, the thermal expansion of InSb was calculated to be α(T)=5.062×10-6+3.15×10-9×T K-1 (T in °C). We found that the thermal expansion coefficient is higher than previously published values above 100 °C (more than 10% higher at 325 °C).

Pengaruh Temperatur, Massa Zink, Substrat Dan Waktu Tahan Terhadap Struktur Dan Morfologi Zno Hasil Sintesis Dengan Metode Chemical Vapour Transport (CVT

Directory of Open Access Journals (Sweden)

Arisela Distyawan

2013-09-01

Full Text Available Normal 0 false false false MicrosoftInternetExplorer4 Material Zink Oksida (ZnO telah berhasil disintesis menggunakan metode Chemical Vapour Transport dengan bahan dasar prekursor berupa serbuk Zn yang dipanaskan hingga mencapai temperatur uap dalam furnace horisontal. Adapun variasi yang diberikan dalam penelitian adalah berupa temperatur pemanasan (850, 900, dan 950oC, massa prekursor Zn (0,15, 0,25, dan 0,35g, lama waktu sputtering substrat (90 dan 180 detik, dan waktu tahan khusus untuk mengetahui initial growth ZnO (10, 20, 30, 40, 50, dan 60 menit. Pembentukan Zink Oksida (ZnO dikonfirmasi melalui data X-RD, dimana telah terbentuk material ZnO dengan struktur hexagonal wurtzite. Berdarsarkan data XRD juga diketahui ukuran kristal pada sampel sputtering 90 detik mengalami penurunan bersamaan penambahan massa Zn. Dari hasil pengamatan SEM didapatkan bahwa morfologi permukaan lapisan tipis ZnO terdiri dari berbagai macam bentuk berupa nanoparticle, nanowires, nanorods, dan nanotetrapod. Lapisan Zno paling tebal sebesar ±350 nm pada sampel 950oC-0,15g sputter 90 detik. Semakin tinggi temperatur operasi berdampak peningkatan ukuran partikel. Pengujian FTIR turut menguatkan terbentuknya lapisan tipis di permukaan substrat Alumina. Hal ini didasarkan terjadinya penyerapan vibrasi yang membentuk lekukan pada kisaran area 509 cm-1 dari masing-masing sampel.

Thermal plasma fabricated lithium niobate-tantalate films on sapphire substrate

International Nuclear Information System (INIS)

Kulinich, S.A.; Yoshida, T.; Yamamoto, H.; Terashima, K.

2003-01-01

We report the deposition of LiNb 1-x Ta x O 3 (0≤x≤1) films on (001) sapphire substrates in soft vacuum using a radio frequency thermal plasma. The growth rate, crystallinity, c-axis orientation, and surface roughness were examined as functions of substrate temperature, precursor feed rate, and substrate surface condition. The film Nb/Ta ratio was well controlled by using an appropriate uniform mixture of lithium-niobium and lithium-tantalum alkoxide solutions. The epitaxy and crystallinity of the films were much improved when the film growth rate was raised from 20 to 180-380 nm/min, where the films with the (006) rocking curve full width at half maximum values as low as 0.12 deg. -0.2 deg. could be produced. The film roughness could be reduced by using a liquid precursor with higher metal concentrations, achieving the root-mean-square value on the order of 5 nm. The refractive indices of the films are in good correspondence with their composition and crystallinity

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Naderi, N., E-mail: naderi.phd@gmail.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Hashim, M.R. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2013-03-05

Highlights: ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical properties of samples. ► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples. ► The effect of annealing temperature on electrical performance of devices was studied. ► The efficiency of photodetectors was enhanced by annealing at elevated temperatures. -- Abstract: A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

International Nuclear Information System (INIS)

Naderi, N.; Hashim, M.R.

2013-01-01

Highlights: ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical properties of samples. ► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples. ► The effect of annealing temperature on electrical performance of devices was studied. ► The efficiency of photodetectors was enhanced by annealing at elevated temperatures. -- Abstract: A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated

Morphology and electronic transport of polycrystalline silicon films deposited by SiF sub 4 /H sub 2 at a substrate temperature of 200 deg. C

CERN Document Server

Hazra, S; Ray, S

2002-01-01

Undoped and phosphorous doped polycrystalline silicon (poly-Si) films were deposited using a SiF sub 4 /H sub 2 gas mixture at a substrate temperature of 200 deg. C by radio frequency plasma enhanced chemical vapor deposition (rf-PECVD). Fourier transform infrared (FTIR) spectroscopy and x-ray diffraction (XRD) experiments reveal that the present poly-Si films are equivalent to the poly-Si films deposited at high temperature (>600 deg. C). XRD and scanning electron microscope observations show that the crystalline quality of slightly P-doped film is better compared to that of undoped poly-Si films. Phosphorus atom concentration in the slightly P-doped poly-Si film is 5.0x10 sup 1 sup 6 atoms/cm sup 3. Association of a few phosphorous atoms in the silicon matrix enhances crystallization as eutectic-forming metals do. Dark conductivity of slightly P-doped film is 4 orders of magnitude higher, although mobility-lifetime product (eta mu tau) is 2 orders of magnitude lower than that of undoped film. The presence o...

Effect of the Substrate on Phonon Properties of Graphene Estimated by Raman Spectroscopy

Science.gov (United States)

Tivanov, M. S.; Kolesov, E. A.; Korolik, O. V.; Saad, A. M.; Komissarov, I. V.

2018-01-01

Low-temperature Raman studies of supported graphene are presented. A linear temperature dependence of 2D peak linewidths was observed with the coefficients of 0.036 and 0.033 cm^{-1}/K for graphene on copper and glass substrates, respectively, while G peak linewidths remained unchanged throughout the whole temperature range. The different values observed for graphene on glass and copper substrates were explained in terms of the substrate effect on phonon-phonon and electron-phonon interaction properties of the material. The results of the present study can be used to consider substrate effects on phonon transport in graphene for nanoelectronic device engineering.

Development and Comparison of the Substrate Scope of Pd-Catalysts for the Aerobic Oxidation of Alcohols

Science.gov (United States)

Schultz, Mitchell J.; Hamilton, Steven S.; Jensen, David R.; Sigman, Matthew S.

2009-01-01

Three catalysts for aerobic oxidation of alcohols are discussed and the effectiveness of each is evaluated for allylic, benzylic, aliphatic, and functionalized alcohols. Additionally, chiral nonracemic substrates as well as chemoselective and diastereoselective oxidations are investigated. In this study, the most convenient system for the Pd-catalyzed aerobic oxidation of alcohols is Pd(OAc)2 in combination with triethylamine. This system functions effectively for the majority of alcohols tested and uses mild conditions (3 to 5 mol % of catalyst, room temperature). Pd(IiPr)(OAc)2(H2O) (1) also successfully oxidizes the majority of alcohols evaluated. This system has the advantage of significantly lowering catalyst loadings but requires higher temperatures (0.1 to 1 mol % of catalyst, 60 °C). A new catalyst is also disclosed, Pd(IiPr)(OPiv)2 (2). This catalyst operates under very mild conditions (1 mol %, room temperature, and air as the O2 source) but with a more limited substrate scope. PMID:15844968

Proposed cryogenic Q-factor measurement of mirror substrates

Energy Technology Data Exchange (ETDEWEB)

Nietzsche, Sandor; Zimmer, Anja; Vodel, Wolfgang; Thuerk, Matthias; Schmidl, Frank; Seidel, Paul [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Helmholtzweg 5, 07743 Jena (Germany)

2004-03-07

The thermal noise of optical components (e.g., end mirrors, beam splitters) is one of the limiting factors of the sensitivity of most of the present interferometric gravitational wave detectors, and it will be limiting in the advanced detectors now being designed. This thermal noise occurs mainly in the optical substrates and their mirror coatings. One possible method for minimizing thermal noise is cooling to cryogenic temperatures, maximizing the mechanical Q and maximizing the eigenfrequencies of the substrate. A new cryogenic apparatus for investigations of the temperature dependency of the Q-factor of several substrate materials down to 4.2 K is proposed. Possible methods of mode excitation and ring down measurement are discussed.

Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

Energy Technology Data Exchange (ETDEWEB)

Ortiz F E; Mishurnyi V; Gorbatchev A; De Anda F [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karacorum 1470, Col. Lomas 4a Sec., CP 78210San Luis PotosI (Mexico); Prutskij T, E-mail: fcoe_ov@prodigy.net.mx, E-mail: andre@cactus.iico.uaslp.mx [BUAP, Instituto de Ciencias, Apartado Postal 207, 72000, Puebla (Mexico)

2011-01-01

In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

A carbon nanotube-based transparent conductive substrate for flexible ZnO dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Du, Juan; Bittner, Florian [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Hecht, David S.; Ladous, Corinne [Unidym, 1244 Reamwood Avenue, Sunnyvale, CA (United States); Ellinger, Jan [Tesa SE, Quickbornstr. 24, 20253 Hamburg (Germany); Oekermann, Torsten, E-mail: torstensan@t-online.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Wark, Michael, E-mail: michael.wark@techem.ruhr-uni-bochum.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Laboratory of Industrial Chemistry, Ruhr University Bochum, Universitaetsstr. 150, 44801 Bochum (Germany)

2013-03-01

A transparent carbon nanotube (CNT)-coated polyethylenterephthalat film was used as conducting substrate for the photoanode of a flexible ZnO-based dye-sensitized solar cell (DSSC). The porous ZnO films were fabricated by an electrochemical deposition method at low temperature. Electrochemical impedance spectroscopy revealed that the CNT/ZnO interface adds to the overall impedance of the cell, leading to a higher series resistance compared to DSSCs based on substrates employing a transparent conducting oxide. Nevertheless, an overall conversion efficiency of 2.5% was obtained with porous ZnO films electrodeposited on the CNT substrate for 60 min. Thicker films led to an increased loss by recombination, which could not be compensated by faster electron transport due to the decrease of the light intensity inside the ZnO film with increasing distance from the back contact. - Highlights: ► ZnO was electrochemically deposited on carbon nanotube (CNT) coated polymer. ► Highly porous ZnO was obtained at temperatures not exceeding 70 °C. ► The porous ZnO was tested as photoanode in dye-sensitized solar cells. ► Conversion efficiency of 2.5% was found on the high resistance CNT substrates. ► Barriers formed at the CNT–ZnO interface are determined by impedance spectroscopy.

A carbon nanotube-based transparent conductive substrate for flexible ZnO dye-sensitized solar cells

International Nuclear Information System (INIS)

Du, Juan; Bittner, Florian; Hecht, David S.; Ladous, Corinne; Ellinger, Jan; Oekermann, Torsten; Wark, Michael

2013-01-01

A transparent carbon nanotube (CNT)-coated polyethylenterephthalat film was used as conducting substrate for the photoanode of a flexible ZnO-based dye-sensitized solar cell (DSSC). The porous ZnO films were fabricated by an electrochemical deposition method at low temperature. Electrochemical impedance spectroscopy revealed that the CNT/ZnO interface adds to the overall impedance of the cell, leading to a higher series resistance compared to DSSCs based on substrates employing a transparent conducting oxide. Nevertheless, an overall conversion efficiency of 2.5% was obtained with porous ZnO films electrodeposited on the CNT substrate for 60 min. Thicker films led to an increased loss by recombination, which could not be compensated by faster electron transport due to the decrease of the light intensity inside the ZnO film with increasing distance from the back contact. - Highlights: ► ZnO was electrochemically deposited on carbon nanotube (CNT) coated polymer. ► Highly porous ZnO was obtained at temperatures not exceeding 70 °C. ► The porous ZnO was tested as photoanode in dye-sensitized solar cells. ► Conversion efficiency of 2.5% was found on the high resistance CNT substrates. ► Barriers formed at the CNT–ZnO interface are determined by impedance spectroscopy

Evolution of film temperature during magnetron sputtering

International Nuclear Information System (INIS)

Shaginyan, L.R.; Han, J.G.; Shaginyan, V.R.; Musil, J.

2006-01-01

We report on the results of measurements of the temperature T F surf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The T F surf and substrate temperature (T s ) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the T F surf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the T s after stopping the deposition. At the same time, the T s either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the T s remains several times lower than the T F surf . The T F surf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of deg. C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature T F surf of HTSL is several times higher than the T s . Variations in the T F surf fairly correlate with structure changes of Cr films along thickness investigated in detail previously

Effect of substrate crystallographic orientation of garnet-ferrite film properties

International Nuclear Information System (INIS)

Burym, Yu.A.; Dubinko, S.V.; Mitsaj, Yu.N.; Borovitskaya, L.N.; Prokopov, A.P.

1992-01-01

Samples of garnet-ferrite films with a composition (YbGdPrBi) 3 (FeAlGa) 5 O 12 grown under identical conditions on variously oriented substrates, have been studied. The substrate orientation was changed in such a way that the vector of the substrate normal was in the [110] plane between the [111] and [112] directions. We have found that the substrate misorientation leads to an inclined position of the easy magnetization axis (EMA) and a reduction of the film growth rate. The change of the film physical properties (Faraday rotation, Curie temperature, magnetization) indicates the film composition variation with the substrate orientation change. The temperature dependence of the EMA slope angle in the studied samples is determined by the magnetoelastic contribution to the anisotropy constants. (author)

Higher-resolution selective metallization on alumina substrate by laser direct writing and electroless plating

Science.gov (United States)

Lv, Ming; Liu, Jianguo; Wang, Suhuan; Ai, Jun; Zeng, Xiaoyan

2016-03-01

How to fabricate conductive patterns on ceramic boards with higher resolution is a challenge in the past years. The fabrication of copper patterns on alumina substrate by laser direct writing and electroless copper plating is a low cost and high efficiency method. Nevertheless, the lower resolution limits its further industrial applications in many fields. In this report, the mechanisms of laser direct writing and electroless copper plating were studied. The results indicated that as the decomposed products of precursor PdCl2 have different chemical states respectively in laser-irradiated zone (LIZ) and laser-affected zone (LAZ). This phenomenon was utilized and a special chemical cleaning method with aqua regia solution was taken to selectively remove the metallic Pd in LAZ, while kept the PdO in LIZ as the only active seeds. As a result, the resolution of subsequent copper patterns was improved significantly. This technique has a great significance to develop the microelectronics devices.

Strong increase in convective precipitation in response to higher temperatures

DEFF Research Database (Denmark)

Berg, P.; Moseley, C.; Härter, Jan Olaf Mirko

2013-01-01

Precipitation changes can affect society more directly than variations in most other meteorological observables, but precipitation is difficult to characterize because of fluctuations on nearly all temporal and spatial scales. In addition, the intensity of extreme precipitation rises markedly...... at higher temperature, faster than the rate of increase in the atmosphere's water-holding capacity, termed the Clausius-Clapeyron rate. Invigoration of convective precipitation (such as thunderstorms) has been favoured over a rise in stratiform precipitation (such as large-scale frontal precipitation......) as a cause for this increase , but the relative contributions of these two types of precipitation have been difficult to disentangle. Here we combine large data sets from radar measurements and rain gauges over Germany with corresponding synoptic observations and temperature records, and separate convective...

Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

Energy Technology Data Exchange (ETDEWEB)

Fenske, F. [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12485 Berlin (Germany)], E-mail: fenske@hmi.de; Schulze, S.; Hietschold, M. [Technische Universitaet Chemnitz, Analytik an Festkoerperoberflaechen, Reichenhainer Str. 70, D-09107 Chemnitz (Germany); Schmidbauer, M. [Institut fuer Kristallzuechtung Berlin, Max-Born-Str.2, D-12489 Berlin (Germany)

2008-06-02

Using pulsed magnetron sputtering at low substrate temperature (T{sub s} = 580 {sup o}C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {l_brace}111{r_brace} planes. Besides these defects - which are typical for low-temperature epitaxy - no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed.

Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

International Nuclear Information System (INIS)

Fenske, F.; Schulze, S.; Hietschold, M.; Schmidbauer, M.

2008-01-01

Using pulsed magnetron sputtering at low substrate temperature (T s = 580 o C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {111} planes. Besides these defects - which are typical for low-temperature epitaxy - no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed

Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

International Nuclear Information System (INIS)

Ding Xingwei; Yan Jinliang; Li Ting; Zhang Liying

2012-01-01

Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO 2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO 2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO 2 /ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO 2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

Science.gov (United States)

Ding, Xingwei; Yan, Jinliang; Li, Ting; Zhang, Liying

2012-01-01

Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO2/ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

Dielectric coatings on metal substrates

International Nuclear Information System (INIS)

Glaros, S.S.; Baker, P.; Milam, D.

1976-01-01

Large aperture, beryllium substrate-based mirrors have been used to focus high intensity pulsed laser beams. Finished surfaces have high reflectivity, low wavefront distortion, and high laser damage thresholds. This paper describes the development of a series of metallic coatings, surface finishing techniques, and dielectric overcoatings to meet specified performance requirements. Beryllium substrates were coated with copper, diamond-machined to within 5 micro-inches to final contour, nickel plated, and abrasively figured to final contour. Bond strengths for several bonding processes are presented. Dielectric overcoatings were deposited on finished multimetallic substrates to increase both reflectivity and the damage thresholds. Coatings were deposited using both high and low temperature processes which induce varying stresses in the finished coating substrate system. Data are presented to show the evolution of wavefront distortion, reflectivity, and damage thresholds throughout the many steps involved in fabrication

Effects of the Substrate Temperature in AuN Thin Films by Means of X-Ray Diffraction

Science.gov (United States)

Devia, A.; Benavides, V.; Castillo, H. A.; Quintero, J.

2006-12-01

Gold is used in electronic industry like electric conductor for products such as computers, mobiles phones, etc; with the drawback that it is one of the most expensive metals in the market. Gold Nitride is a new material, having excellent physics properties like high hardness, high melting point, high electric conductivity, chemical inertia and good thermodynamic stabily among others. At the moment its study is more about electronics, optics, mechanical properties and growth of the films. AuN thin films were produced by the PAPVD (Plasma assisted Physics Vapor Deposition) method, using the pulsed arc technique in a mono-vaporizer system. These films were created with an Au target of 99% purity and deposited on stainless steel 304. It was observed that heating the substrate produces small stoichiometric changes in the film, which makes small changes in the diffraction patterns to appear, like widening in the Au orientation, since the composicional gradient is varying according to the substrate temperature. Au 4f and N1s narrow spectra were analyzed using XPS (X-Ray Photoelectron Spectroscopy), in order to observe stoichiometry in the films.

Effects of the Substrate Temperature in AuN Thin Films by Means of X-Ray Diffraction

International Nuclear Information System (INIS)

Devia, A.; Benavides, V.; Castillo, H. A.; Quintero, J.

2006-01-01

Gold is used in electronic industry like electric conductor for products such as computers, mobiles phones, etc; with the drawback that it is one of the most expensive metals in the market. Gold Nitride is a new material, having excellent physics properties like high hardness, high melting point, high electric conductivity, chemical inertia and good thermodynamic stabily among others. At the moment its study is more about electronics, optics, mechanical properties and growth of the films. AuN thin films were produced by the PAPVD (Plasma assisted Physics Vapor Deposition) method, using the pulsed arc technique in a mono-vaporizer system. These films were created with an Au target of 99% purity and deposited on stainless steel 304. It was observed that heating the substrate produces small stoichiometric changes in the film, which makes small changes in the diffraction patterns to appear, like widening in the Au orientation, since the composicional gradient is varying according to the substrate temperature. Au 4f and N1s narrow spectra were analyzed using XPS (X-Ray Photoelectron Spectroscopy), in order to observe stoichiometry in the films

Effect of the substrate surface topology and temperature on the structural properties of ZnO layers obtained by plasma enhanced chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria)

2010-04-01

In this work thin ZnO layers were grown by metal-organic PECVD (RF 13.56 MHz) on Si wafers. Zn acetylacetonate was used as a precursor and oxygen as oxidant. A system for dosed injection of the precursor and oxidant into the plasma reactor was developed. The influence of the substrate surface topology and temperature on the structural properties of the deposited layers was studied. ZnO and graphite powder dispersions were used to modify the silicon wafers before starting the deposition process of the layers. Some of the ZnO layers were deposited on the back, unpolished, side of Si wafers. Depositions at 400 {sup 0}C were performed to examine the effect of the substrate temperatures on the layer growth. The film structure was examined by XRD and SEM. The results show that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along the c-axis direction perpendicular to the substrate surfaces. ZnO layers deposited on thin ZnO seed films and clean Si surface exhibit well-developed grain structures and more c-axis preferred phase with better crystal quality than that of the layers deposited on graphite seed layer or rough, unpolished Si wafer.

Germinação de sementes de urucu em diferentes temperaturas e substratos Germination of annatto seeds under different temperatures and substrates

Directory of Open Access Journals (Sweden)

Renata Vianna Lima

2007-08-01

Full Text Available Objetivou-se, neste trabalho, analisar o comportamento germinativo das sementes de urucu cultivar Casca Verde, com e sem escarificação, sob regime de diferentes temperaturas e substratos. O trabalho foi realizado no Laboratório de Tecnologia e Análise de Sementes do Centro de Ciências Agrárias da Universidade Federal do Espírito Santo (CCA-UFES. O delineamento experimental utilizado foi o inteiramente casualizado, num esquema fatorial 2x6x4 (dois tratamentos físicos nas sementes, seis substratos e quatro temperaturas, totalizando 48 tratamentos, com quatro repetições de 50 sementes. Os tratamentos físicos foram: as sementes intactas e as sementes escarificadas; os substratos foram: a areia, a vermiculita, a fibra de coco, o pó de serra, o Plantmax e o rolo de papel Germitest ; e, as temperaturas testadas foram constantes de 20, 25 e 30ºC e alternada de 20-30ºC. Os dados foram submetidos à análise de variância e as médias comparadas pelo teste de Tukey. Os resultados obtidos evidenciaram maior porcentagem de germinação das sementes de urucu, semeadas nos substratos areia, vermiculita e rolo de papel; as temperaturas de 25, 30 e 20-30ºC foram mais adequadas para testes de germinação dessas sementes.This work was carried out with the objective to verify the effect of temperature and substrate on germinative capacity of annatto seeds. This study was developed in the Laboratories of Seed Analysis of Agrarian Science Center that belongs to the Universidade Federal do Espirito Santo (CCA-UFES, located in Alegre ES, Brazil. The experimental design was 2x6x4 factorial involving: (i two treatments in the seeds, (ii six substrates, and (iii four temperatures. Four replications were realized using 50 seeds at each experimental unit. Treatments refer to intact and scarified seeds. Substrates utilized were sand, vermiculite, coconut fiber, wood fiber, Plantmax and paper roll. Temperatures employed were 20, 25, 30 and 20-30ºC. Average

High quality silicon-based substrates for microwave and millimeter wave passive circuits

Science.gov (United States)

Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

2017-09-01

Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

Radio frequency plasma nitriding of aluminium at higher power levels

International Nuclear Information System (INIS)

Gredelj, Sabina; Kumar, Sunil; Gerson, Andrea R.; Cavallaro, Giuseppe P.

2006-01-01

Nitriding of aluminium 2011 using a radio frequency plasma at higher power levels (500 and 700 W) and lower substrate temperature (500 deg. C) resulted in higher AlN/Al 2 O 3 ratios than obtained at 100 W and 575 deg. C. AlN/Al 2 O 3 ratios derived from X-ray photoelectron spectroscopic analysis (and corroborated by heavy ion elastic recoil time of flight spectrometry) for treatments preformed at 100 (575 deg. C), 500 (500 deg. C) and 700 W (500 deg. C) were 1.0, 1.5 and 3.3, respectively. Scanning electron microscopy revealed that plasma nitrided surfaces obtained at higher power levels exhibited much finer nodular morphology than obtained at 100 W

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Directory of Open Access Journals (Sweden)

Huijie Li

2016-10-01

Full Text Available Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

Strain rate effects in nuclear steels at room and higher temperatures

Energy Technology Data Exchange (ETDEWEB)

Solomos, G. E-mail: george.solomos@jrc.it; Albertini, C.; Labibes, K.; Pizzinato, V.; Viaccoz, B

2004-04-01

An investigation of strain rate, temperature and size effects in three nuclear steels has been conducted. The materials are: ferritic steel 20MnMoNi55 (vessel head), austenitic steel X6CrNiNb1810 (upper internal structure), and ferritic steel 26NiCrMo146 (bolting). Smooth cylindrical tensile specimens of three sizes have been tested at strain rates from 0.001 to 300 s{sup -1}, at room and elevated temperatures (400-600 deg. C). Full stress-strain diagrams have been obtained, and additional parameters have been calculated based on them. The results demonstrate a clear influence of temperature, which amounts into reducing substantially mechanical strengths with respect to RT conditions. The effect of strain rate is also shown. It is observed that at RT the strain rate effect causes up shifting of the flow stress curves, whereas at the higher temperatures a mild downshifting of the flow curves is manifested. Size effect tendencies have also been observed. Some implications when assessing the pressure vessel structural integrity under severe accident conditions are considered.

Liquid crystal displays with plastic substrates

Science.gov (United States)

Lueder, Ernst H.

1998-04-01

Plastic substrates for the cells of displays exhibit only 1/6 of the weight of glass substrates; they are virtually unbreakable; their flexibility allows the designer to give them a shape suppressing reflections, to realize a display board on a curved surface or meeting the requirements for an appealing styling; displays with plastics are thinner which provides a wider viewing angle. These features render them attractive for displays in portable systems such as mobile phones, pagers, smart cards, personal digital assistants (PDAs) and portable computers. Reflective displays are especially attractive as they don't need a back light. The most important requirements are the protection of plastics against gas permeation and chemical agents, the prevention of layers on plastics to crack or peel off when the plastic is bent and the development of low temperature thin film processes because the plastics, as a rule, only tolerate temperatures below 150 degrees Celsius. Bistable reflective FLC- and PSCT-displays with plastic substrates will be introduced. Special sputtered SiO2-orientation layers preserve the displayed information even if pressure or torsion is applied. MIM-addressed PDLC-displays require additional Al- or Ti-layers which provide the necessary ductility. Sputtered or PECVD-generated TFTs can be fabricated on plastics at temperatures below 150 degrees Celsius.

Upper lethal temperatures in three cold-tolerant insects are higher in winter than in summer.

Science.gov (United States)

Vu, Henry M; Duman, John G

2017-08-01

Upper lethal temperatures (ULTs) of cold-adapted insect species in winter have not been previously examined. We anticipated that as the lower lethal temperatures (LLTs) decreased (by 20-30°C) with the onset of winter, the ULTs would also decrease accordingly. Consequently, given the recent increases in winter freeze-thaw cycles and warmer winters due to climate change, it became of interest to determine whether ambient temperatures during thaws were approaching ULTs during the cold seasons. However, beetle Dendroides canadensis (Coleoptera: Pyrochroidae) larvae had higher 24 and 48 h ULT 50 (the temperature at which 50% mortality occurred) in winter than in summer. The 24 and 48 h ULT 50 for D. canadensis in winter were 40.9 and 38.7°C, respectively. For D. canadensis in summer, the 24 and 48 h ULT 50 were 36.7 and 36.4°C. During the transition periods of spring and autumn, the 24 h ULT 50 was 37.3 and 38.5°C, respectively. While D. canadensis in winter had a 24 h LT 50 range between LLT and ULT of 64°C, the summer range was only 41°C. Additionally, larvae of the beetle Cucujus clavipes clavipes (Coleoptera: Cucujidae) and the cranefly Tipula trivittata (Diptera: Tipulidae) also had higher ULTs in winter than in summer. This unexpected phenomenon of increased temperature survivorship at both lower and higher temperatures in the winter compared with that in the summer has not been previously documented. With the decreased high temperature tolerance as the season progresses from winter to summer, it was observed that environmental temperatures are closest to upper lethal temperatures in spring. © 2017. Published by The Company of Biologists Ltd.

Effects of Soil Temperature and Moisture on Soil Respiration on the Tibetan Plateau.

Science.gov (United States)

Bao, Xiaoying; Zhu, Xiaoxue; Chang, Xiaofeng; Wang, Shiping; Xu, Burenbayin; Luo, Caiyun; Zhang, Zhenhua; Wang, Qi; Rui, Yichao; Cui, Xiaoying

2016-01-01

Understanding of effects of soil temperature and soil moisture on soil respiration (Rs) under future warming is critical to reduce uncertainty in predictions of feedbacks to atmospheric CO2 concentrations from grassland soil carbon. Intact cores with roots taken from a full factorial, 5-year alpine meadow warming and grazing experiment in the field were incubated at three different temperatures (i.e. 5, 15 and 25°C) with two soil moistures (i.e. 30 and 60% water holding capacity (WHC)) in our study. Another experiment of glucose-induced respiration (GIR) with 4 h of incubation was conducted to determine substrate limitation. Our results showed that high temperature increased Rs and low soil moisture limited the response of Rs to temperature only at high incubation temperature (i.e. 25°C). Temperature sensitivity (Q10) did not significantly decrease over the incubation period, suggesting that substrate depletion did not limit Rs. Meanwhile, the carbon availability index (CAI) was higher at 5°C compared with 15 and 25°C incubation, but GIR increased with increasing temperature. Therefore, our findings suggest that warming-induced decrease in Rs in the field over time may result from a decrease in soil moisture rather than from soil substrate depletion, because warming increased root biomass in the alpine meadow.

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

KAUST Repository

Sarath Kumar, S. R.

2011-10-24

Lattice dynamics, low-temperature electrical transport, and high-temperature thermoelectric properties of (In, Yb)-doped CoSb3thin films on different substrates are reported. Pulsed laser deposition under optimized conditions yielded single-phase polycrystalline skutterudite films. Raman spectroscopy studies suggested that In and Yb dopants occupy the cage sites in the skutterudite lattice. Low-temperature electrical transport studies revealed the n-type semiconducting nature of the films with extrinsic and intrinsic conduction mechanisms, in sharp contrast to the degenerate nature reported for identical bulk samples. Calculations yielded a direct bandgap close to 50 meV with no evidence of an indirect gap. The carrier concentration of the films was identical to that reported for the bulk and increased with temperature beyond 250 K. The higher resistivity exhibited is attributed to the enhanced grain boundary scattering in films with a high concentration of grains. The maximum power factor of ∼0.68 W m−1 K−1 obtained at 660 K for the film on glass is found to be nearly four times smaller compared to that reported for the bulk. The observed difference in the power factors of the films on different substrates is explained on the basis of the diffusion of oxygen from the substrates and the formation of highly conducting CoSb2 phase upon the oxidation of CoSb3.

Growth and BZO-doping of the nanostructured YBCO thin films on buffered metal substrates

DEFF Research Database (Denmark)

Huhtinen, H.; Irjala, M.; Paturi, P.

2010-01-01

The growth of the nanostructured YBa2Cu3O6+x (YBCO) films is investigated for the first time on biaxially textured NiW substrates used in coated conductor technology. The optimization process of superconducting layers is made in wide magnetic field and temperature range in order to understand...... the vortex pinning structure and mechanism in our films prepared from nanostructured material. Structural analysis shows that growth mechanism in YBCO films grown on NiW is completely different when compared to YBCO on STO. Films on NiW are much rougher, there is huge in-plane variation of YBCO crystals...... and moreover out-of-plane long range lattice ordering is greatly reduced. Magnetic measurements demonstrate that jc in films grown on NiW is higher in high magnetic fields and low temperatures. This effect is connected to the amount of pinning centres observed in films on metal substrates which are effective...

Temperature dependent investigation on optically active process of higher-order bands in irradiated silicon

International Nuclear Information System (INIS)

Shi Yi; Nanjing Univ., JS; Wu Fengmei; Nanjing Univ., JS; Zheng Youdou; Nanjing Univ., JS; Suezawa, M.; Imai, M.; Sumino, K.

1996-01-01

Optically active processes of the higher-order bands (HOB) are investigated at different temperatures in fast neutron irradiated silicon using Fourier transform infrared absorption measurement. It is shown that the optically active process is nearly temperature independent below 80 K, the slow decay process remains up to a heating temperature of 180 K. The observations are analyzed in terms of the relaxation behavior of photoexcited carriers governed by fast neutron radiation induced defect clusters. (orig.)

Bioceramic coating of hydroxyapatite on titanium substrate with Nd-YAG laser

International Nuclear Information System (INIS)

Cheng, Gary J.; Pirzada, Daniel; Cai, M.; Mohanty, Pravansu; Bandyopadhyay, Amit

2005-01-01

The ability to bond to bone tissue is a unique property of bioactive ceramics. Hydroxyapatite (HAp) is one of the potential bioceramics candidates due to its superior bio-compatibility. Significant effort has been devoted to coat HAp ceramics on metallic substrates. Most of these processes, such as ion-beam sputter coating, thermal spraying, and flame spraying, are high temperature line of sight processes, which suffer from undesirable phase formation and weak metal/HAP bonding strength. This paper presents a unique process to coat HAp powders on titanium substrates at low temperature and enhance the coating/substrate interface by laser surface engineering. Nd-YAG laser transmits HAp powders and the laser power is absorbed by titanium substrate to produce a thin layer of molten region. During coating process, HAp powders are kept at low temperature before they are entrapped in metallic layer. Scanning electron microscope (SEM) was used to investigate the microstructure of coating; the chemical composition of the coating is determined by energy dispersive spectrometry (EDS). Mechanical properties of the interface between coating and Ti substrate were investigated by nanoindentation

Effects of substrate preheating during direct energy deposition on microstructure, hardness, tensile strength, and notch toughness

Science.gov (United States)

Baek, Gyeong Yun; Lee, Ki Yong; Park, Sang Hu; Shim, Do Sik

2017-11-01

This study examined the effects of substrate preheating for the hardfacing of cold-press dies using the high-speed tool steel AISI M4. The preheating of the substrate is a widely used technique for reducing the degree of thermal deformation and preventing crack formation. We investigated the changes in the metallurgical and mechanical properties of the high-speed tool steel M4 deposited on an AISI D2 substrate with changes in the substrate preheating temperature. Five preheating temperatures (100-500 °C; interval of 100 °C) were selected, and the changes in the temperature of the substrate during deposition were observed. As the preheating temperature of the substrate was increased, the temperature gradient between the melting layer and the substrate decreased; this prevented the formation of internal cracks, owing to thermal stress relief. Field-emission scanning electron microscopy showed that a dendritic structure was formed at the interface between the deposited layer and the substrate while a cellular microstructure was formed in the deposited layer. As the preheating temperature was increased, the sizes of the cells and precipitated carbides also increased. Furthermore, the hardness increased slightly while the strength and toughness decreased. Moreover, the tensile and impact properties deteriorated rapidly at excessively high preheating temperatures (greater than 500 °C). The results of this study can be used as preheating criteria for achieving the desired mechanical properties during the hardfacing of dies and molds.

Interface between Sn-Sb-Cu solder and copper substrate

Energy Technology Data Exchange (ETDEWEB)

Sebo, P., E-mail: Pavel.Sebo@savba.sk [Institute of Materials and Machine Mechanics, Slovak Academy of Sciences, Racianska 75, 831 02 Bratislava 3 (Slovakia); Svec, P. [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 845 11 Bratislava 45 (Slovakia); Faculty of Materials Science and Technology, Slovak University of Technology, J. Bottu 25, 917 24 Trnava (Slovakia); Janickovic, D.; Illekova, E. [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 845 11 Bratislava 45 (Slovakia); Plevachuk, Yu. [Ivan Franko National University, Department of Metal Physics, 79005 Lviv (Ukraine)

2011-07-15

Highlights: {yields} New lead-free solder materials based on Sn-Sb-Cu were designed and prepared. {yields} Melting and solidification temperatures of the solders have been determined. {yields} Cu-substrate/solder interaction has been analyzed and quantified. {yields} Phases formed at the solder-substrate interface have been identified. {yields} Composition and soldering atmospheres were correlated with joint strength. - Abstract: Influence of antimony and copper in Sn-Sb-Cu solder on the melting and solidification temperatures and on the microstructure of the interface between the solder and copper substrate after wetting the substrate at 623 K for 1800 s were studied. Microstructure of the interface between the solder and copper substrates in Cu-solder-Cu joints prepared at the same temperature for 1800 s was observed and shear strength of the joints was measured. Influence of the atmosphere - air with the flux and deoxidising N{sub 2} + 10H{sub 2} gas - was taken into account. Thermal stability and microstructure were studied by differential scanning calorimetry (DSC), light microscopy, scanning electron microscopy (SEM) with energy-dispersive spectrometry (EDS) and X-ray diffraction (XRD). Melting and solidification temperatures of the solders were determined. An interfacial transition zone was formed by diffusion reaction between solid copper and liquid solder. At the interface Cu{sub 3}Sn and Cu{sub 6}Sn{sub 5} phases arise. Cu{sub 3}Sn is adjacent to the Cu substrate and its thickness decreases with increasing the amount of copper in solder. Scallop Cu{sub 6}Sn{sub 5} phase is formed also inside the solder drop. The solid solution Sn(Sb) and SbSn phase compose the interior of the solder drop. Shear strength of the joints measured by push-off method decreases with increasing Sb concentration. Copper in the solder shows even bigger negative effect on the strength.

Formation of boride layers on steel substrates

International Nuclear Information System (INIS)

Stergioudis, G.

2006-01-01

Boronizing coatings were prepared by means of pack cementation technique. It was found that using the appropriate substrate and controlling parameters of the boribing process such as boron activity of the mixture, temperature and time of treatment, it is possible to obtain a structure predominantly consisting of the Fe 2 B phase. In the present study low alloy ferritic steels were chosen as substrates. Changing the boron carbide concentration in the mixture and the temperature and time of boronizing process the conditions of the boronizing were altered. As a result the formation of the Fe 2 B phase is enhanced. Characterization of the as-borided steels is discussed based on X-ray diffraction and Curie temperature measurements. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A comparative wear study of sputtered ZrN coatings on Si and titanium modified stainless steel substrates

International Nuclear Information System (INIS)

Singh, Akash; Kuppusami, P.; Thirumurugesan, R.; Mohandas, E.; Geetha, M.; Kamaraj, V.; Kumar, Niranjan

2010-01-01

In the present work wear behaviour of ZrN films grown by a pulsed direct current magnetron sputtering method is reported. The films were grown on silicon (100) and titanium modified stainless steel (alloy-D9) substrates by reactive sputtering in a mixture of argon and nitrogen gases. The structural parameters, preferred orientation and crystallite size as a function of substrate temperatures in the range 300-873 K were studied using X-Ray Diffraction. Deposition parameters have been found to influence the growth rate, crystalline structure and surface roughness, which affect the tribological behaviour of the films. A comparative wear study was performed on these substrates with steel and ceramic balls to evaluate the frictional properties of films. The best tribological performance was found for the sample grown with low flow rates of nitrogen (≤ 2 SCCM) at 873K. The coefficient of friction was found to be lower for the films deposited at higher temperature using steel and ceramic balls. This behaviour was correlated with microstructure and deformation behaviour of coatings. (author)

Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

International Nuclear Information System (INIS)

Li Yanbo; Zhang Yang; Zhang Yuwei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping

2012-01-01

We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (Ga Sb ) defect.

Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE

Science.gov (United States)

Nishio, Mitsuhiro; Saito, Katsuhiko; Urata, Kensuke; Okamoto, Yasuhiro; Tanaka, Daichi; Araki, Yasuhiro; Abiru, Masakatsu; Mori, Eiichiro; Tanaka, Tooru; Guo, Qixin

2015-03-01

The growth of undoped and phosphorus (P)-doped Zn1-xMgxSeyTe1-y layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy was carried out. The compositions of Mg and Se, surface morphology, roughness and Raman property were characterized as a function of substrate temperature. Not only the compositions of Mg and Se but also the crystal quality of undoped Zn1-xMgxSeyTe1-y layer strongly depended upon the substrate temperature. Furthermore, the growth of Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe substrate was achieved independent of the transport rate of trisdimethylaminophosphorus. Undoped Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe led to improvement of surface roughness. On the other hand, P doping brought about deterioration of crystalline quality.

Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

International Nuclear Information System (INIS)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-01-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100 deg. C, 1300 deg. C and 1500 deg. C for about 20 hours using heating and cooling rates of 2 deg. C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

Science.gov (United States)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-03-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

Effect of process temperature on structure, microstructure, residual stresses and soft magnetic properties of sputtered Fe{sub 70}Co{sub 30} thin films

Energy Technology Data Exchange (ETDEWEB)

Inamdar, Swaleha; Ramudu, M.; Raja, M. Manivel, E-mail: mraja@dmrl.drdo.in; Kamat, S.V.

2016-11-15

The effect of substrate and post-annealing temperatures on the structure, microstructure, residual stresses and soft magnetic properties of Fe{sub 70}Co{sub 30} thin films was systematically investigated. Microstructural studies reveal that the films are continuous and undergo changes in shape of grain from plate like to spherical resulting in an increase in grain size with the increase in substrate temperature, whereas the post-annealed films show small pores and no significant grain growth till 500 °C. Coercivity (H{sub c}) was found decreasing with both the substrate and post-annealing temperatures; however, the best H{sub c} value of 26 Oe was obtained for the films deposited at substrate temperature of 500 °C. The post-annealed films exhibited relatively higher H{sub c} values. A good combination of high saturation magnetization 4πM{sub s} of ~23.2 kG and low coercivity H{sub c} of 26–65 Oe was obtained for the films deposited at substrate temperature of 450–500 °C. Residual stress analysis on films with different substrate temperatures shows the presence of tensile stress. The decrease in tensile stress is attributed to the relaxation of thermal stresses in the films. - Highlights: • The properties of Fe{sub 70}Co{sub 30} thin films with substrate and post-annealing temperatures are studied. • Good combination of M{sub s} and H{sub c} were observed in the films with different substrate temperatures. • Coercivity decrease is attributed to the increased grain size and smaller residual stresses.

Reel-to-reel substrate tape polishing system

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, Venkat; Gardner, Michael T.; Judd, Raymond D.; Weloth, Martin; Qiao, Yunfei

2005-06-21

Disclosed is a reel-to-reel single-pass mechanical polishing system (100) suitable for polishing long lengths of metal substrate tape (124) used in the manufacture of high-temperature superconductor (HTS) coated tape, including multiple instantiations of a polishing station (114) in combination with a subsequent rinsing station (116) arranged along the axis of the metal substrate tape (124) that is translating between a payout spool (110a) and a take-up spool (110b). The metal substrate tape obtains a surface smoothness that is suitable for the subsequent deposition of a buffer layer.

Titanium disilicide formation by sputtering of titanium on heated silicon substrate

Science.gov (United States)

Tanielian, M.; Blackstone, S.

1984-09-01

We have sputter deposited titanium on bare silicon substrates at elevated temperatures. We find that at a substrate temperature of about 515 °C titanium silicide is formed due to the reaction of the titanium with the Si. The resistivity of the silicide is about 15 μΩ cm and it is not etchable in a selective titanium etch. This process can have applications in low-temperature, metal-oxide-semiconductor self-aligned silicide formation for very large scale integrated

The effect of temperature, matrix alloying and substrate coatings on wettability and shear strength of Al/Al2O3 couples

Science.gov (United States)

Sobczak, N.; Ksiazek, M.; Radziwill, W.; Asthana, R.; Mikulowski, B.

2004-03-01

A fresh approach has been advanced to examine in the Al/Al2O3 system the effects of temperature, alloying of Al with Ti or Sn, and Ti and Sn coatings on the substrate, on contact angles measured using a sessile-drop test, and on interface strength measured using a modified push-off test that allows shearing of solidified droplets with less than 90 deg contact angle. In the modified test, the solidified sessile-drop samples are bisected perpendicular to the drop/Al2O3 interface at the midplane of the contact circle to obtain samples that permit bond strength measurement by stress application to the flat surface of the bisected couple. The test results show that interface strength is strongly influenced by the wetting properties; low contact angles correspond to high interface strength, which also exhibits a strong temperature dependence. An increase in the wettability test temperature led to an increase in the interface strength in the low-temperature range where contact angles were large and wettability was poor. The room-temperature shear tests conducted on thermally cycled sessile-drop test specimens revealed the effect of chemically formed interfacial oxides; a weakening of the thermally cycled Al/Al2O3 interface was caused under the following conditions: (1) slow contact heating and short contact times in the wettability test, and (2) fast contact heating and longer contact times. The addition of 6 wt pct Ti or 7 wt pct Sn to Al only marginally influenced the contact angle and interfacial shear strength. However, Al2O3 substrates having thin (<1 µm) Ti coatings yielded relatively low contact angles and high bond strength, which appears to be related to the dissolution of the coating in Al and formation of a favorable interface structure.

Development of optimized nanogap plasmonic substrate for improved SERS enhancement

Directory of Open Access Journals (Sweden)

Jayakumar Perumal

2017-05-01

Full Text Available SERS enhancement factor (EF of planar substrates depends on the size and shape of the fine nanostructure forming a defect free, well-arranged matrix. Nano-lithographic process is considered to be the most advanced methods employed for the fabrication SERS substrates. Nanostructured plasmonic substrates with nanogap (NG pattern often results in stable, efficient and reproducible SERS enhancement. For such substrates, NG and their diagonal length (DL need to be optimized. Theoretically smaller NGs (∼30-40 nm or smaller results in higher SERS enhancement. However, fabrication of NG substrates below such limit is a challenge even for the most advanced lithography process. In this context, herein, we report the optimization of fabrication process, where higher SERS enhancement can be realized from larger NGs substrates by optimizing their DL of nanostructures between the NGs. Based on simulation we could demonstrate that, by optimizing the DL, SERS enhancement from larger NG substrate such as 60 and 80 nm could be comparable to that of smaller (40nm NG substrates. We envision that this concept will open up new regime in the nanofabrication of practically feasible NG based plasmonic substrates with higher SERS enhancement. Initial results of our experiments are in close agreement with our simulated study.

Dimer and String Formation during Low Temperature Silicon Deposition on Si(100)

DEFF Research Database (Denmark)

Smith, A. P.; Jonsson, Hannes

1996-01-01

We present theoretical results based on density functional theory and kinetic Monte Carlo simulations of silicon deposition and address observations made in recently reported low temperature scanning tunneling microscopy studies. A mechanism is presented which explains dimer formation on top...... of the substrate's dimer rows at 160 K and up to room temperature, while between-row dimers and longer strings of adatoms (''diluted dimer rows'') form at higher temperature. A crossover occurs at around room temperature between two different mechanisms for adatom diffusion in our model....

Hot Films on Ceramic Substrates for Measuring Skin Friction

Science.gov (United States)

Noffz, Greg; Leiser, Daniel; Bartlett, Jim; Lavine, Adrienne

2003-01-01

Hot-film sensors, consisting of a metallic film on an electrically nonconductive substrate, have been used to measure skin friction as far back as 1931. A hot film is maintained at an elevated temperature relative to the local flow by passing an electrical current through it. The power required to maintain the specified temperature depends on the rate at which heat is transferred to the flow. The heat transfer rate correlates to the velocity gradient at the surface, and hence, with skin friction. The hot-film skin friction measurement method is most thoroughly developed for steady-state conditions, but additional issues arise under transient conditions. Fabricating hot-film substrates using low-thermal-conductivity ceramics can offer advantages over traditional quartz or polyester-film substrates. First, a low conductivity substrate increases the fraction of heat convected away by the fluid, thus increasing sensitivity to changes in flow conditions. Furthermore, the two-part, composite nature of the substrate allows the installation of thermocouple junctions just below the hot film, which can provide an estimate of the conduction heat loss.

Carbon Dioxide Adsorption by Calcium Zirconate at Higher Temperature

Directory of Open Access Journals (Sweden)

K. B. Kale

2012-12-01

Full Text Available The CO2 adsorption by calcium zirconate was explored at pre- and post- combustion temperature condition. The several samples of the calcium zirconate were prepared by different methods such as sol-gel, solid-solid fusion, template and micro-emulsion. The samples of the calcium zirconate were characterized by measurement of surface area, alkalinity/acidity, and recording the XRD patterns and SEM images. The CO2 adsorptions by samples of the calcium zirconate were studied in the temperature range 100 to 850 oC and the CO2 adsorptions were observed in the ranges of 6.88 to 40.6 wt % at 600 0C and 8 to 16.82 wt% at in between the temperatures 200 to 300 oC. The effect of Ca/Zr mol ratio in the samples of the calcium zirconate on the CO2 adsorption and alkalinity were discussed. The adsorbed moisture by the samples of the calcium zirconate was found to be useful for the CO2 adsorption. The promoted the samples of the calcium zirconate by K+, Na+, Rb+, Cs+, Ag+ and La3+ showed the increased CO2 adsorption. The exposure time of CO2 on the samples of the calcium zirconate showed the increased CO2 adsorption. The samples of the calcium zirconate were found to be regenerable and reusable several times for the adsorption of CO2 for at the post- and pre-combustion temperature condition. Copyright © 2012 by BCREC Undip. All rights reservedReceived: 23rd June 2012, Revised: 28th August 2012, Accepted: 30th August 2012[How to Cite: K. B. Kale, R. Y. Raskar, V. H. Rane and A. G.  Gaikwad (2012. Carbon Dioxide Adsorption by Calcium Zirconate at Higher Temperature. Bulletin of Chemical Reaction Engineering & Catalysis, 7 (2: 124-136. doi:10.9767/bcrec.7.2.3686.124-136] [How to Link / DOI: http://dx.doi.org/10.9767/bcrec.7.2.3686.124-136 ] | View in 

Cryogenic Q-factor measurement of optical substrate materials

Energy Technology Data Exchange (ETDEWEB)

Nietzsche, S; Nawrodt, R; Zimmer, A; Thuerk, M; Vodel, W; Seidel, P [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Helmholtzweg 5, 07743 Jena (Germany)

2006-03-02

Upcoming generations of interferometric gravitational wave detectors are likely to be operated at cryogenic temperatures because one of the sensitivity limiting factors of the present generation is the thermal noise of optical components (e.g. end mirrors, cavity couplers, beam splitters). The main contributions to this noise are due to the substrate, the optical coating, and the suspension. The thermal noise can be reduced by cooling to cryogenic temperatures. In addition the overall mechanical quality factor should preferable increase at low temperatures. The experimental details of a new cryogenic apparatus for investigations of the temperature dependency of the Q-factor of several substrate materials in the range of 5 to 300 K are presented. To perform a ring down recording an electrostatic mode excitation of the samples and an interferometric read-out of the amplitude of the vibrations was used.

Inkjet printed paper based frequency selective surfaces and skin mounted RFID tags : the interrelation between silver nanoparticle ink, paper substrate and low temperature sintering technique

NARCIS (Netherlands)

Sanchez-Romaquera, V.; Wïnscher, S.; Turki, B.M.; Abbel, R.J.; Barbosa, S.; Tate, D.J.; Oyeka, D.; Batchelor, J.C.; Parker, E.A.; Schubert, U.S.; Yeates, S.G.

2015-01-01

Inkjet printing of functional frequency selective surfaces (FSS) and radio frequency identification (RFID) tags on commercial paper substrates using silver nanoparticle inks sintered using low temperature thermal, plasma and photonic techniques is reported. Printed and sintered FSS devices

In situ observation of carbon nanotube layer growth on microbolometers with substrates at ambient temperature

Science.gov (United States)

Svatoš, Vojtěch; Gablech, Imrich; Ilic, B. Robert; Pekárek, Jan; Neužil, Pavel

2018-03-01

Carbon nanotubes (CNTs) have near unity infrared (IR) absorption efficiency, making them extremely attractive for IR imaging devices. Since CNT growth occurs at elevated temperatures, the integration of CNTs with IR imaging devices is challenging and has not yet been achieved. Here, we show a strategy for implementing CNTs as IR absorbers using differential heating of thermally isolated microbolometer membranes in a C2H2 environment. During the process, CNTs were catalytically grown on the surface of a locally heated membrane, while the substrate was maintained at an ambient temperature. CNT growth was monitored in situ in real time using optical microscopy. During growth, we measured the intensity of light emission and the reflected light from the heated microbolometer. Our measurements of bolometer performance show that the CNT layer on the surface of the microbolometer membrane increases the IR response by a factor of (2.3 ± 0.1) (mean ± one standard deviation of the least-squares fit parameters). This work opens the door to integrating near unity IR absorption, CNT-based, IR absorbers with hybrid complementary metal-oxide-semiconductor focal plane array architectures.

Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques

International Nuclear Information System (INIS)

Doerner, M.F.; Gardner, D.S.; Nix, W.D.

1986-01-01

Substrate curvature and submicron indentation measurements have been used recently to study plastic deformation in thin films on substrates. In the present work both of these techniques have been employed to study the strength of aluminum and tungsten thin films on silicon substrates. In the case of aluminum films on silicon substrates, the film strength is found to increase with decreasing thickness. Grain size variations with film thickness do not account for the variations in strength. Wafer curvature measurements give strengths higher than those predicted from hardness measurements suggesting the substrate plays a role in strengthening the film. The observed strengthening effect with decreased thickness may be due to image forces on dislocations in the film due to the elastically stiffer silicon substrate. For sputtered tungsten films, where the substrate is less stiff than the film, the film strength decreases with decreasing film thickness

Sonochemically synthesized Ag nanoparticles as a SERS active substrate and effect of surfactant

Energy Technology Data Exchange (ETDEWEB)

Dar, Nitzan, E-mail: n58987012@mail.ncku.edu.tw [Department of Material Science and Engineering, National Cheng Kung University, Tainan 70101 Taiwan (China); Chen, Kuang-Yu [Department of Material Science and Engineering, National Cheng Kung University, Tainan 70101 Taiwan (China); Nien, Yung-Tang, E-mail: ytnien@nfu.edu.tw [Department of Materials Science and Engineering, National Formosa University, Huwei, Yunlin 63201, Taiwan (China); Perkas, Nina [Institute of nanotechnology and advanced materials, Department of Chemistry, Bar-Ilan University, Ramat-Gan 5290002 (Israel); Gedanken, Aharon, E-mail: Aharon.Gedanken@biu.ac.il [Institute of nanotechnology and advanced materials, Department of Chemistry, Bar-Ilan University, Ramat-Gan 5290002 (Israel); Chen, In-Gann, E-mail: ingann@mail.ncku.edu.tw [Department of Material Science and Engineering, National Cheng Kung University, Tainan 70101 Taiwan (China)

2015-03-15

Highlights: • Solid state Ag SERS active substrates were sonochemically synthesized. • High intensity SERS spectra of both crystal violet and rhodamine 6G were observed. • We discovered that PVP aided synthesized substrates showed higher SERS intensity. - Abstract: Surface enhanced Raman scattering (SERS) enables the detection of substances at low concentrations using silver or gold nanostructure. The SERS technique has many applications, such as environmental detection and biosensing. Sonochemistry is an excellent and cheap deposition technique for coating substrates in a form of nanostructure at ambient temperature. It can also be utilized to prepare large SERS substrates. Here, we used the advantages of sonochemistry to deposit solid SERS substrates immobilized on GaN nanostructure. Morphology was studied by scanning electron microscopy. The elemental composition and the spatial distribution were examined by energy dispersive X-ray spectroscopy. The crystal structure and atomic presence was confirmed by X-ray diffraction. SERS substrates were examined with the analytes crystal violet (10{sup −5} M) and rhodamine 6G (10{sup −6} M), they showed prominent characteristic peaks. We discovered that the SERS intensity of poly-vinyl-pyrrolidinone aided sonochemical deposition of Ag nanoparticles was increased. The reason for the effect is morphological changes of the Ag nanoparticles. Smaller nanoparticles were fabricated, which increase their SERS intensity.

Heating power at the substrate, electron temperature, and electron density in 2.45 GHz low-pressure microwave plasma

Science.gov (United States)

Kais, A.; Lo, J.; Thérèse, L.; Guillot, Ph.

2018-01-01

To control the temperature during a plasma treatment, an understanding of the link between the plasma parameters and the fundamental process responsible for the heating is required. In this work, the power supplied by the plasma onto the surface of a glass substrate is measured using the calorimetric method. It has been shown that the powers deposited by ions and electrons, and their recombination at the surface are the main contributions to the heating power. Each contribution is estimated according to the theory commonly used in the literature. Using the corona balance, the Modified Boltzmann Plot (MBP) is employed to determine the electron temperature. A correlation between the power deposited by the plasma and the results of the MBP has been established. This correlation has been used to estimate the electron number density independent of the Langmuir probe in considered conditions.

Effect of substrate temperature on the optical, structural and morphological properties of In{sub 2}Se{sub 3} thin films grown by a two-step process

Energy Technology Data Exchange (ETDEWEB)

Clavijo, J; Gordillo, G [Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia); Romero, E, E-mail: jiclavijop@unal.edu.c, E-mail: erromerom@unal.edu.c, E-mail: ggordillog@unal.edu.c

2009-05-01

Polycrystalline gamma - In{sub 2}Se{sub 3} thin films with adequate properties to use them as buffer layer in solar cells, were grown on corning glass substrates using a novel procedure which includes the formation of the alpha- In{sub 2}Se{sub 3} phase in a first step followed by thermal annealing in Se ambient to activate the formation of the gamma- In{sub 2}Se{sub 3} phase. X-ray diffraction (XRD) measurements revealed that the substrate temperature strongly affects the phase in which the indium selenide films grow; at substrate temperatures of around 300{sup 0}C the indium selenide grow in the alpha-In{sub 2}Se{sub 3} phase, whereas the samples deposited at temperatures between 300 and 550{sup 0}C grow with a mixture of the alpha-In{sub 2}Se{sub 3} and gamma-In{sub 2}Se{sub 3} phases. The alpha-In{sub 2}Se{sub 3} samples change into the gamma-In{sub 2}Se{sub 3} phase when subjected to heat treatment around 550{sup 0}C in Se ambient. Spectrophotometric measurements also revealed that the phase in which the indium selenide films grow, significantly affects the optical gap Eg. Eg values of 1.47 eV and 2.11 eV were determined for the alpha-In{sub 2}Se{sub 3} and gamma-In{sub 2}Se{sub 3} films respectively, indicating that this gamma-In{sub 2}Se{sub 3} compound has better properties to perform as buffer layer in thin film solar cells. The effect of substrate temperature on the structural, optical and morphological properties was investigated using XRD, spectral transmittance and atomic force microscope (AFM) measurements. Theoretical simulation of the XRD pattern carried out with the help of the PowderCell package, allowed us to identify the phases associated to the X-Ray reflections, with a good degree of confidence.

Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

International Nuclear Information System (INIS)

Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

2013-01-01

In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

Molecular beam epitaxy of CdSe epilayers and quantum wells on ZnTe substrate

International Nuclear Information System (INIS)

Park, Y.M.; Andre, R.; Kasprzak, J.; Dang, Le Si; Bellet-Amalric, E.

2007-01-01

We have grown zinc-blende cadmium selenide (CdSe) epilayers on ZnTe-(0 0 1) substrate by molecular beam epitaxy (MBE). By controlling the substrate temperature and beam-equivalent pressure (BEP) ratio, of Se to Cd, we determined the most suitable growth condition based on reflection high-energy electron diffraction (RHEED) pattern. At a substrate temperature of 280 deg. C and a BEP ratio of 3.6, the RHEED pattern showed a V-like feature, indicating a rough surface with facets. As the substrate temperature was increased to 360 deg. C at the same BEP ratio, a V-like RHEED pattern moved to a clear streaky pattern. Moreover when the BEP ratio was increased to 4.8 at 360 deg. C of substrate temperature, a clear (2 x 1) reconstruction of the CdSe layer was observed. A CdSe/CdMgSe single quantum well structure was also grown on ZnTe-(0 0 1) substrate by MBE. The RHEED pattern showed a clear (2 x 1) surface reconstruction during the growth. By photoluminescence measurement, a good optical property of the structure was obtained

System and process for aluminization of metal-containing substrates

Science.gov (United States)

Chou, Yeong-Shyung; Stevenson, Jeffry W

2015-11-03

A system and method are detailed for aluminizing surfaces of metallic substrates, parts, and components with a protective alumina layer in-situ. Aluminum (Al) foil sandwiched between the metallic components and a refractory material when heated in an oxidizing gas under a compression load at a selected temperature forms the protective alumina coating on the surface of the metallic components. The alumina coating minimizes evaporation of volatile metals from the metallic substrates, parts, and components in assembled devices during operation at high temperature that can degrade performance.

System and process for aluminization of metal-containing substrates

Energy Technology Data Exchange (ETDEWEB)

Chou, Yeong-Shyung; Stevenson, Jeffry W.

2017-12-12

A system and method are detailed for aluminizing surfaces of metallic substrates, parts, and components with a protective alumina layer in-situ. Aluminum (Al) foil sandwiched between the metallic components and a refractory material when heated in an oxidizing gas under a compression load at a selected temperature forms the protective alumina coating on the surface of the metallic components. The alumina coating minimizes evaporation of volatile metals from the metallic substrates, parts, and components in assembled devices that can degrade performance during operation at high temperature.

Wettability of eutectic NaLiCO3 salt on magnesium oxide substrates at 778 K

Science.gov (United States)

Li, Chuan; Li, Qi; Cao, Hui; Leng, Guanghui; Li, Yongliang; Wang, Li; Zheng, Lifang; Ding, Yulong

2018-06-01

We investigated the wetting behavior of a eutectic carbonate salt of NaLiCO3 on MgO substrates at an elevated temperature of 778 K by measuring contact angle with a sessile drop method. Both sintered and non-sintered MgO were prepared and used as the substrates. The sintered substrates were obtained by sintering compacted MgO powders at 500-1300 °C. For comparison purposes, a single crystal MgO substrate was also used in the work. The different sintering temperatures provided MgO substrates with different structures, allowing their effects on salt penetration and hence wettability and surface energy to be investigated. A scanning electron microscope equipped with energy dispersive spectrometry and an atomic force microscope were used to observe the morphology and structures of the MgO substrates as well as the salt penetration. The results showed a good wettability of the carbonate salt on both the sintered and non-sintered MgO substrates and the wettability depended strongly on the structure of the substrates. The non-sintered MgO substrate has a loose surface particle packing with large pores and crevices, leading to significant salt infiltration, and the corresponding contact angle was measured to be ∼25°. The contact angle of the salt on the sintered MgO substrates increased with an increase in the sintering temperature of the MgO substrate, and the contact angle of the salt on the single crystal substrate was the highest at ∼40°. The effect of the sintering temperature for making the MgO substrate could be linked to the surface energy, and the linkage is validated by the AFM measurements of the adhesion forces of the MgO substrates.

Microcrystalline silicon growth by low laser energy crystallization on a plastic substrate

International Nuclear Information System (INIS)

Kim, D. Y.; Seo, C. K.; Shim, M. S.; Kim, C. H.; Yi, J.

2004-01-01

We are reporting the crystallization of amorphous silicon (a-Si) using a XeCl excimer laser treatment. Although polycarbonate (PC) plastic substrates are very weak at high temperatures of more than 150 .deg. C, they are very useful for applications to microelectronics because of light weight, high transmittance, and flexibility. In order to crystallize a-Si films on plastic substrates, we suggest that a CeO 2 seed layer will be very helpful at a low laser energy density. The seed layer is deposited at room temperature by rf using magnetron sputtering. A seed layer deposition method will be also presented in detail in this article. We compare a-Si crytallization without a seed layer with one with a seed layer deposited between the a-Si and the plastic substrate. The a-Si was deposited on the plastic substrate by using inductively coupled plasma Chemical-Vapor Deposition (ICPCVD) at the room temperature. In this paper, we will present the crystallization properties of a-Si with and without a CeO 2 seed layer on the plastic substrate.

FEM thermal and stress analysis of bonded GaN-on-diamond substrate

Science.gov (United States)

Zhai, Wenbo; Zhang, Jingwen; Chen, Xudong; Bu, Renan; Wang, Hongxing; Hou, Xun

2017-09-01

A three-dimensional thermal and stress analysis of bonded GaN on diamond substrate is investigated using finite element method. The transition layer thickness, thermal conductivity of transition layer, diamond substrate thickness and the area ratio of diamond and GaN are considered and treated appropriately in the numerical simulation. The maximum channel temperature of GaN is set as a constant value and its corresponding heat power densities under different conditions are calculated to evaluate the influences that the diamond substrate and transition layer have on GaN. The results indicate the existence of transition layer will result in a decrease in the heat power density and the thickness and area of diamond substrate have certain impact on the magnitude of channel temperature and stress distribution. Channel temperature reduces with increasing diamond thickness but with a decreasing trend. The stress is reduced by increasing diamond thickness and the area ratio of diamond and GaN. The study of mechanical and thermal properties of bonded GaN on diamond substrate is useful for optimal designs of efficient heat spreader for GaN HEMT.

SOI MESFETs on high-resistivity, trap-rich substrates

Science.gov (United States)

Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor J.

2018-04-01

The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

2012-01-01

ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process

KAUST Repository

Sliz, Rafal

2012-06-01

Microcrystalline silicon (mc-Si) lms deposited using a Plasma Enhanced Chemical Vapour Deposition (PECVD) process constitute an important material for manufacturing low-cost, large-area thin-lm devices, such as solar cells or thin-lm transistors. Although the deposition of electronic-grade mc-Si using the PECVD process is now well established, the high substrate temperature required (~400°C) does not lend itself to electronic devices with exible form factors fabricated on low-cost plastic substrates. In this study, we rst investigated an intrinsic mc-Si layer deposited at plastic-compatible substrate temperatures (~150°C) by characterising the properties of the lm and then evaluated its applicability to p-i-n solar cells though device characterisation. When the performance of the solar cell was correlated with lm properties, it was found that, although it compared unfavourably with mc-Si deposited at higher temperatures, it remained a very promising option. Nonetheless, further development is required to increase the overall eciency of mc-Si exible solar cells.

Nanowire surface fastener fabrication on flexible substrate

Science.gov (United States)

Toku, Yuhki; Uchida, Keita; Morita, Yasuyuki; Ju, Yang

2018-07-01

The market for wearable devices has increased considerably in recent years. In response to this demand, flexible electronic circuit technology has become more important. The conventional bonding technology in electronic assembly depends on high-temperature processes such as reflow soldering, which result in undesired thermal damages and residual stress at a bonding interface. In addition, it exhibits poor compatibility with bendable or stretchable device applications. Therefore, there is an urgent requirement to attach electronic parts on printed circuit boards with good mechanical and electrical properties at room temperature. Nanowire surface fasteners (NSFs) are candidates for resolving these problems. This paper describes the fabrication of an NSF on a flexible substrate, which can be used for room temperature conductive bonding. The template method is used for preparing high-density nanowire arrays. A Cu thin film is layered on the template as the flexible substrate. After etching the template, a Cu NSF is obtained on the Cu film substrate. In addition, the electrical and mechanical properties of the Cu NSF are studied under various fabrication conditions. The Cu NSF exhibits high shear adhesion strength (∼234 N cm‑2) and low contact resistivity (2.2 × 10‑4 Ω cm2).

Concentration of radiocesium in cultivated mushrooms and substrates

International Nuclear Information System (INIS)

Miyake, Sadaaki; Higasa, Mamoru; Urabe, Ken-ichi; Haraguchi, Masato; Omura, Toshitaka

2008-01-01

Concentrations of 134 Cs, 137 Cs and 40 K in mushrooms cultivated in Saitama prefecture and those substrates were measured by gamma-ray spectrometry. In all mushrooms and substrates, 134 Cs was not detected. Concentrations of 137 Cs in mushrooms were in the range of 0.012 - 2.1 Bq/kg·fresh, and those in substrates were in the range of 0.080 - 1.8 Bq/kg·dry. Concentrations of 137 Cs in mushrooms varied widely with mushroom species, and the average concentration of 137 Cs in Lentinus edodes (Shiitake) was over 30 times higher than that in Pleurotus ostreatus (Hiratake). Mushroom-to-substrate concentration ratios of 137 Cs (fresh/dry) were 0.11-0.53. They were higher than the reported transfer factors for common agricultural plants. (author)

Development of solid electrolytes for water electrolysis at higher temperature

Energy Technology Data Exchange (ETDEWEB)

Linkous, C.A. [Florida Solar Energy Center, Cocoa, FL (United States)

1996-10-01

This report describes efforts in developing new solid polymer electrolytes that will enable operation of proton exchange membrane electrolyzers at higher temperatures than are currently possible. Several ionomers have been prepared from polyetheretherketone (PEEK), polyethersulfone (PES), and polyphenylquinoxaline (PPQ) by employing various sulfonation procedures. By controlling the extent of sulfonation, a range of proton conductivities could be achieved, whose upper limit actually exceeded that of commercially available perfluoralkyl sulfonates. Thermoconductimetric analysis of samples at various degrees of sulfonation showed an inverse relationship between conductivity and maximum operating temperature. This was attributed to the dual effect of adding sulfonate groups to the polymer: more acid groups produce more protons for increased conductivity, but they also increase water uptake, which mechanically weakens the membrane. This situation was exacerbated by the limited acidity of the aromatic sulfonic acids (pK{sub A} {approx} 2-3). The possibility of using partial fluorination to raise the acid dissociation constant is discussed.

A comparative study of glycerol and sorbitol as co-substrates in methanol-induced cultures of Pichia pastoris: temperature effect and scale-up simulation.

Science.gov (United States)

Berrios, Julio; Flores, María-Olga; Díaz-Barrera, Alvaro; Altamirano, Claudia; Martínez, Irene; Cabrera, Zaida

2017-03-01

The production of recombinant proteins by Pichia pastoris under AOX1 promoter is usually performed using methanol together with either glycerol or sorbitol as co-substrate. Although both co-substrates have been widely used, comparative studies are scarce. In addition, these comparisons have been performed at different specific growth rate (µ) that it is well known that has an important effect on productivity. Thus, the effect of using these co-substrates on the production of Rhyzopus oryzae lipase (ROL) by P. pastoris was compared in continuous cultures growing at the same µ at either 22 or 30 °C. Results show that using glycerol as co-substrate led to higher volumetric productivities, and lower specific and volumetric methanol consumption rates. Scale-up simulation with 10-10,000 L bioreactor sizes indicated that glycerol produced the highest volumetric productivity of ROL with lower aeration requirements. Therefore, glycerol rises as a better option than sorbitol in ROL production.

High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Finzel, A.; Gerlach, J.W., E-mail: juergen.gerlach@iom-leipzig.de; Lorbeer, J.; Frost, F.; Rauschenbach, B.

2014-10-30

Highlights: • Irradiation of gallium nitride films with hyperthermal nitrogen ions. • Surface roughening at elevated sample temperatures was observed. • No thermal decomposition of gallium nitride films during irradiation. • Asymmetric surface diffusion processes cause local roughening. - Abstract: Wurtzitic GaN films deposited on 6H-SiC(0001) substrates by ion-beam assisted molecular-beam epitaxy were irradiated with hyperthermal nitrogen ions with different fluences at different substrate temperatures. In situ observations with reflection high energy electron diffraction showed that during the irradiation process the surface structure of the GaN films changed from two dimensional to three dimensional at elevated temperatures, but not at room temperature. Atomic force microscopy revealed an enhancement of nanometric holes and canyons upon the ion irradiation at higher temperatures. The roughness of the irradiated and heated GaN films was clearly increased by the ion irradiation in accordance with x-ray reflectivity measurements. A sole thermal decomposition of the films at the chosen temperatures could be excluded. The results are discussed taking into account temperature dependent sputtering and surface uphill adatom diffusion as a function of temperature.

Observation of room temperature ferromagnetism in ZnTe:Cr films grown onto glass substrate by thermal evaporation method

Energy Technology Data Exchange (ETDEWEB)

Soundararajan, D; Mangalaraj, D; Nataraj, D [Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore -641 046 (India); Dorosinskii, L [National Institute of Metrology (TUBITAK -UME), P.K. 54, 41470, Gebze -Kocaeli (Turkey); Santoyo-Salazar, J, E-mail: dorosins@ume.tubitak.gov.t [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, Mexico D.F. 04510 (Mexico)

2009-03-01

ZnTe and ZnTe:Cr films were prepared onto glass substrates using thermal evaporation method. Structural properties of the prepared samples were analyzed using X-ray diffractometer, and the presence of ZnCrTe phase was identified along with poor crystallinity. Composition analysis was done using XPS and the Cr content in the film was found to be 0.05 atomic percent. Transmittance spectra were recorded using UV-Vis spectrophotometer. The valence state of Cr in ZnTe:Cr film is determined to be +2 using electron spin resonance (ESR) spectroscopy. Magnetic moment data as a function of magnetic field were recorded using Superconducting Quantum Interference Device (SQUID) magnetometer at temperatures 5, 77 and 300 K. The results showed minority ferromagnetic behavior even at room temperature. Magnetic domains were observed using Magnetic Force Microscopy and the average value of domain size is 3.7 nm.

A protocol for storage and long-distance shipment of Mediterranean fruit fly (Diptera: Tephritidae) eggs. II. Assessment of the optimal temperature and the substrate for male-only production

International Nuclear Information System (INIS)

Maman, E.; Caceres, C.

2007-01-01

The present study has been conducted to assess the effect and interaction of various storage substrates and conditions on eggs of the Mediterranean fruit fly (medfly) Ceratitis capitata (Wiedemann). Tests were carried out with the genetic sexing strain VIENNA 8/D53, a strain that carries a temperature sensitive lethal (tsl) mutation that allows the selective killing of female zygotes. This study identifies strategies to enhance the storage and transport conditions through assessment of effect on egg, pupal and adult survival in order to facilitate the establishment of satellite mass rearing facilities for the production of male medflies. Eggs were immersed in two different substrates and stored at different temperatures and for different time periods. Findings from this study suggest that egg storage periods, and to some extent, the storage substrates have significant effects on pupal and adult survival. For 72-h storage periods, the eggs preserved in agar solution at 10 deg. C produced the most pupae. There was an inverse relationship between the concentration of dissolved oxygen in the substrate during storage and the quality and survival of the stored/transported eggs. Apparently low levels of dissolved oxygen reduce metabolic rates, allowing the storage period to be prolonged. (author) [es

Effects of incident cluster size, substrate temperature, and incident energy on bombardment of Ni clusters onto Cu (0 0 1) surface studied using molecular dynamics simulation

International Nuclear Information System (INIS)

Lin, Shiang-Jiun; Wu, Cheng-Da; Fang, Te-Hua; Chen, Guan-Hung

2012-01-01

The bombardment process of a Ni cluster onto a Cu (0 0 1) surface is studied using molecular dynamics (MD) simulations based on the tight-binding second-moment approximation (TB-SMA) many-body potential. The effects of incident cluster size, substrate temperature, and incident energy are evaluated in terms of molecular trajectories, kinetic energy, stress, self-diffusion coefficient, and sputtering yield. The simulation results clearly show that the penetration depth and Cu surface damage increase with increasing incident cluster size for a given incident energy per atom. The self-diffusion coefficient and the penetration depth of a cluster significantly increase with increasing substrate temperature. An incident cluster can be scattered into molecules or atoms that become embedded in the surface after incidence. When the incident energy is increased, the number of volcano-like defects and the penetration depth increase. A high sputtering yield can be obtained by increasing the incident energy at high temperature. The sputtering yield significantly increases with cluster size when the incident energy is above 5 eV/atom.

Development of 1 m HTS conductor using YBCO on textured metal substrate

International Nuclear Information System (INIS)

Yagi, M.; Sakamoto, H.; Mukoyama, S.; Yamamoto, K.; Amemiya, N.; Nagaya, S.; Kashima, N.; Shiohara, Y.

2009-01-01

We fabricated 1 m high temperature superconducting conductor (HTS conductor) using YBa 2 Cu 3 O 7-x coated conductors (YBCO tapes) on textured metal substrates, which are expected to be lower in cost than YBCO tapes using ion-beam assisted deposition. Those substrate and intermediate layers were manufactured by Furukawa Electric, and YBCO and a protective layer were applied to the intermediate layer by Chubu Electric Power. Before fabricating the conductor, a 0.1 mm thick copper tape was soldered to the YBCO tape, and 10 mm wide YBCO tape was divided into three strips by a YAG laser. To have sufficient current capacity for 1 kA, a two-layer conductor was fabricated, and its critical current (I c ) was 1976 A, but the magnetic properties of the textured metal substrates affected the increase in AC loss. In a low current region, the AC loss in this conductor was much higher than the Norris strip model, but approached the Norris strip model in the high current region because the magnetization was almost saturated. Low AC loss of 0.144 W/m at 1 kA rms was achieved even though the conductor had a small outer diameter of 20 mm and was composed of YBCO tapes with magnetic substrates.

EXAMINATION OF THE OXIDATION PROTECTION OF ZINC COATINGS FORMED ON COPPER ALLOYS AND STEEL SUBSTRATES

International Nuclear Information System (INIS)

Papazoglou, M.; Chaliampalias, D.; Vourlias, G.; Pavlidou, E.; Stergioudis, G.; Skolianos, S.

2010-01-01

The exposure of metallic components at aggressive high temperature environments, usually limit their usage at similar application because they suffer from severe oxidation attack. Copper alloys are used in a wide range of high-quality indoor and outdoor applications, statue parts, art hardware, high strength and high thermal conductivity applications. On the other hand, steel is commonly used as mechanical part of industrial set outs or in the construction sector due to its high mechanical properties. The aim of the present work is the examination of the oxidation resistance of pack cementation zinc coatings deposited on copper, leaded brass and steel substrates at elevated temperature conditions. Furthermore, an effort made to make a long-term evaluation of the coated samples durability. The oxidation results showed that bare substrates appear to have undergone severe damage comparing with the coated ones. Furthermore, the mass gain of the uncoated samples was higher than this of the zinc covered ones. Particularly zinc coated brass was found to be more resistant to oxidation conditions in which it was exposed as it has the lower mass gain as compared to the bare substrates and zinc coated copper. Zinc coated steel was also proved to be more resistive than the uncoated steel.

Temperature adaptation of bacterial communities in experimentally warmed forest soils.

Science.gov (United States)

Rousk, Johannes; Frey, Serita D; Bååth, Erland

2012-10-01

A detailed understanding of the influence of temperature on soil microbial activity is critical to predict future atmospheric CO 2 concentrations and feedbacks to anthropogenic warming. We investigated soils exposed to 3-4 years of continuous 5 °C-warming in a field experiment in a temperate forest. We found that an index for the temperature adaptation of the microbial community, T min for bacterial growth, increased by 0.19 °C per 1 °C rise in temperature, showing a community shift towards one adapted to higher temperature with a higher temperature sensitivity (Q 10(5-15 °C) increased by 0.08 units per 1 °C). Using continuously measured temperature data from the field experiment we modelled in situ bacterial growth. Assuming that warming did not affect resource availability, bacterial growth was modelled to become 60% higher in warmed compared to the control plots, with the effect of temperature adaptation of the community only having a small effect on overall bacterial growth (bacterial growth, most likely due to substrate depletion because of the initially higher growth in warmed plots. When this was factored in, the result was similar rates of modelled in situ bacterial growth in warmed and control plots after 3 years, despite the temperature difference. We conclude that although temperature adaptation for bacterial growth to higher temperatures was detectable, its influence on annual bacterial growth was minor, and overshadowed by the direct temperature effect on growth rates. © 2012 Blackwell Publishing Ltd.

Optimal Substrate Preheating Model for Thermal Spray Deposition of Thermosets onto Polymer Matrix Composites

Science.gov (United States)

Ivosevic, M.; Knight, R.; Kalidindi, S. R.; Palmese, G. R.; Tsurikov, A.; Sutter, J. K.

2003-01-01

High velocity oxy-fuel (HVOF) sprayed, functionally graded polyimide/WC-Co composite coatings on polymer matrix composites (PMC's) are being investigated for applications in turbine engine technologies. This requires that the polyimide, used as the matrix material, be fully crosslinked during deposition in order to maximize its engineering properties. The rapid heating and cooling nature of the HVOF spray process and the high heat flux through the coating into the substrate typically do not allow sufficient time at temperature for curing of the thermoset. It was hypothesized that external substrate preheating might enhance the deposition behavior and curing reaction during the thermal spraying of polyimide thermosets. A simple analytical process model for the deposition of thermosetting polyimide onto polymer matrix composites by HVOF thermal spray technology has been developed. The model incorporates various heat transfer mechanisms and enables surface temperature profiles of the coating to be simulated, primarily as a function of substrate preheating temperature. Four cases were modeled: (i) no substrate preheating; (ii) substrates electrically preheated from the rear; (iii) substrates preheated by hot air from the front face; and (iv) substrates electrically preheated from the rear and by hot air from the front.

Thermal and Microstructure Characterization of Zn-Al-Si Alloys and Chemical Reaction with Cu Substrate During Spreading

Science.gov (United States)

Berent, Katarzyna; Pstruś, Janusz; Gancarz, Tomasz

2016-08-01

The problems associated with the corrosion of aluminum connections, the low mechanical properties of Al/Cu connections, and the introduction of EU directives have forced the potential of new materials to be investigated. Alloys based on eutectic Zn-Al are proposed, because they have a higher melting temperature (381 °C), good corrosion resistance, and high mechanical strength. The Zn-Al-Si cast alloys were characterized using differential scanning calorimetry (DSC) measurements, which were performed to determine the melting temperatures of the alloys. Thermal linear expansion and electrical resistivity measurements were performed at temperature ranges of -50 to 250 °C and 25 to 300 °C, respectively. The addition of Si to eutectic Zn-Al alloys not only limits the growth of phases at the interface of liquid solder and Cu substrate but also raises the mechanical properties of the solder. Spreading test on Cu substrate using eutectic Zn-Al alloys with 0.5, 1.0, 3.0, and 5.0 wt.% of Si was studied using the sessile drop method in the presence of QJ201 flux. Spreading tests were performed with contact times of 1, 8, 15, 30, and 60 min, and at temperatures of 475, 500, 525, and 550 °C. After cleaning the flux residue from solidified samples, the spreadability of Zn-Al-Si on Cu was determined. Selected, solidified solder/substrate couples were cross-sectioned, and the interfacial microstructures were studied using scanning electron microscopy and energy dispersive x-ray spectroscopy. The growth of the intermetallic phase layer was studied at the solder/substrate interface, and the activation energy of growth of Cu5Zn8, CuZn4, and CuZn phases were determined.

Effect of temperature during ion sputtering on the surface segregation rate of antimony in an iron-antimony alloy at higher temperatures

International Nuclear Information System (INIS)

Oku, M.; Hirokawa, K.; Kimura, H.; Suzuki, S.

1986-01-01

The surface segregation of antimony in an iron-0.23 at% antimony alloy was studied by XPS. The segregation rate in the temperature range between 800 and 900 K depends on the temperature during sputtering with argon ion of kinetic energy of 1 keV. The sputtering at room temperature or 473 K gives higher values of the segregation rate than those at 673 K. Both cases give the activation energy of 170 kJmol -1 for the surface segregation rate. The segregation of antimony is not observed after the sample is heated at 1000 K. (author)

Microstructure and High-temperature Wear Behavior of Hot-dipped Aluminized Coating on Different Substrate Materials

Directory of Open Access Journals (Sweden)

ZHOU De-qin

2018-02-01

Full Text Available The aluminized 45 and H13 steel were prepared via hot-dipped aluminizing and subsequently high-temperature diffusion treatment. The phase, morphology and composition of aluminized coating were characterized by XRD,SEM and EDS methods. Comparative study was performed on unlubricated sliding wear behavior of plating under different substrates on a pin-on-disc wear tester, and the wear mechanism was explored. The results show that the coating is composed of ductile phases FeAl and Fe3Al. Kikendall porosity parallel to the surface exists around the interface of the two phases; because of the carbide particles agglomeration, the bond between the coating and H13 steel is apparently inferior to that in the case of 45 steel; the aluminized 45 steel possesses an excellent wear resistance under 50-200N at 400℃, whereas mild-to-severe wear transition occurs when the temperature increases to 600℃. The wear rate of the aluminized H13 steel reaches the lowest at 400℃, then slightly increases at 600℃. The wear mechanisms of Fe-Al coating are mainly predominated by oxidative mild wear, whereas the extrusion wear prevails in the process for aluminized 45 steel at 600℃.

Temperature-driven adaptation of the bacterial community in peat measured by using thymidine and leucine incorporation.

Science.gov (United States)

Ranneklev, S B; Bååth, E

2001-03-01

The temperature-driven adaptation of the bacterial community in peat was studied, by altering temperature to simulate self-heating and a subsequent return to mesophilic conditions. The technique used consisted of extracting the bacterial community from peat using homogenization-centrifugation and measuring the rates of thymidine (TdR) or leucine (Leu) incorporation by the extracted bacterial community at different temperatures. Increasing the peat incubation temperature from 25 degrees C to 35, 45, or 55 degrees C resulted in a selection of bacterial communities whose optimum temperatures for activity correlated to the peat incubation temperatures. Although TdR and Leu incorporations were significantly correlated, the Leu/TdR incorporation ratios were affected by temperature. Higher Leu/TdR incorporation ratios were found at higher temperatures of incubation of the extracted bacterial community. Higher Leu/TdR incorporation ratios were also found for bacteria in peat samples incubated at higher temperatures. The reappearance of the mesophilic community and disappearance of the thermophilic community when the incubation temperature of the peat was shifted down were monitored by measuring TdR incorporation at 55 degrees C (thermophilic activity) and 25 degrees C (mesophilic activity). Shifting the peat incubation temperature from 55 to 25 degrees C resulted in a recovery of the mesophilic activity, with a subsequent disappearance of the thermophilic activity. The availability of substrate for bacterial growth varied over time and among different peat samples. To avoid confounding effects of substrate availability, a temperature adaptation index was calculated. This index consisted of the log(10) ratio of TdR incorporation at 55 and 25 degrees C. The temperature index decreased linearly with time, indicating that no thermophilic activity would be detected by the TdR technique 1 month after the temperature downshift. There were no differences between the slopes of the