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Sample records for higher ga content

  1. A new wire fabrication processing using high Ga content Cu-Ga compound in V3Ga compound superconducting wire

    International Nuclear Information System (INIS)

    Hishinuma, Yoshimitsu; Nishimura, Arata; Kikuchi, Akihiro; Iijima, Yasuo; Takeuchi, Takao

    2007-01-01

    A superconducting magnet system is also one of the important components in an advanced magnetic confinement fusion reactor. Then it is required to have a higher magnetic field property to confine and maintain steady-sate burning deuterium (D)-tritium (T) fusion plasma in the large interspace during the long term operation. Burning plasma is sure to generate 14 MeV fusion neutrons during deuterium-tritium reaction, and fusion neutrons will be streamed and penetrated to superconducting magnet through large ports with damping neutron energy. Therefore, it is necessary to consider carefully not only superconducting property but also neutron irradiation property in superconducting materials for use in a future fusion reactor, and a 'low activation and high field superconducting magnet' will be required to realize the fusion power plant beyond International Thermonuclear Experimental Reactor (ITER). V-based superconducting material has a much shorter decay time of induced radioactivity compared with the Nb-based materials. We thought that the V 3 Ga compound was one of the most promising materials for the 'low activation and higher field superconductors' for an advanced fusion reactor. However, the present critical current density (J c ) property of V 3 Ga compound wire is insufficient for apply to fusion magnet applications. We investigated a new route PIT process using a high Ga content Cu-Ga compound in order to improve the superconducting property of the V 3 Ga compound wire. (author)

  2. Photoluminescence study of the nitrogen content effect on GaAs/GaAs1-xNx/GaAs/AlGaAs: (Si) quantum well

    International Nuclear Information System (INIS)

    Hamdouni, A.; Bousbih, F.; Ben bouzid, S.; Aloulou, S.; Harmand, J.C.; Chtourou, R.

    2008-01-01

    We study the effect of nitrogen content in modulation-doped GaAs/GaAs 1-x N x /GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs 1-x N x /GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model

  3. Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

    DEFF Research Database (Denmark)

    Sadowski, Janusz; Domagala, Jaroslaw Z.; Mathieu, Roland

    2011-01-01

    °C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1% and 2%, grown by molecular beam epitaxy at 270°C. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400°C for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn......,Ga)As nanocrystals, with similar diameters of 7-10 nm, are observed to coexist in layers with an initial Mn content of 0.5% and 2% after higher-temperature annealing. Measurements of magnetization relaxation in the time span 0.1-10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals......X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate-temperature (400°C) and high-temperature (560°C and 630...

  4. Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

    International Nuclear Information System (INIS)

    Vickers, M.E.; Kappers, M.J.; Smeeton, T.M.; Thrush, E.J.; Barnard, J.S.; Humphreys, C.J.

    2003-01-01

    We have determined the indium content and the layer thicknesses in an InGaN epilayer and InGaN/GaN quantum well structures by high-resolution x-ray diffraction (XRD) using the (002) reflection. The thickness of the total repeat (an InGaN well plus a GaN barrier) in the superlattice is easily determined from the spacing between the satellite peaks in an omega/2theta scan. Measurement of the individual thickness of InGaN and GaN layers and the indium content is less straightforward, since for multilayer structures the peak positions are influenced by both the indium content and the thickness ratio of the GaN to the InGaN layer. Thus, several different models may give reasonable fits to data collected over a limited range (about 1 deg. omega/2theta either side of the (002)) showing only lower-order (-3 to +3) satellite peaks. Whenever possible, we have collected data over a wide range (about 4 deg. omega/2theta) and determined the thickness ratio by examination of the relative intensities of weak higher-order satellite peaks (-7 to +5). An alternative but less sensitive method is to use relative intensities from x-ray reflectivity measurements to give the thickness ratio. Once the thickness of both the InGaN and GaN layers has been established, the InGaN composition can be determined from the peak positions. If the quality of the samples is poor, because of inhomogeneities or wide diffuse interfaces, there are insufficient data to characterize the structures. There is good agreement between the composition of the epilayer as determined by XRD and secondary ion mass spectroscopy and good agreement between x-ray and electron microscopy results for the quantum well structures. We find no variation from Vegard's rule for In contents less than 0.20. This article shows that structural parameters of high-quality InGaN/GaN superlattices with 10 and 5 repeats can be determined reliably by x-ray techniques: The InGaN and GaN thicknesses to ±1 Aa and the In content to ±0.01

  5. Luminescence investigation of Cu(In,Ga)Se{sub 2}solar cells with different Ga-contents grown in a three-stage-process on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wendt, Kristin; Mueller, Mathias; Hempel, Thomas; Bertram, Frank; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz-Zentrum Berlin for Materials and Energy (Germany)

    2011-07-01

    A fundamental advantage of Cu(In,Ga)Se{sub 2} (CIGS) alloys as absorber materials in thin-film solar cells is their direct band gap energies which can be varied between 1.04 eV (CuInSe{sub 2}) and 1.68 eV (CuGaSe{sub 2}). Photoluminescence (PL) spectra of complete CIGS solar cells with a systematic variation of the Ga-content in the absorber layer will be presented. The CIGS cells investigated were grown on a Mo back contact sputtered on soda lime glass and have a Ga-concentration ranging over the entire range from CuInSe{sub 2} to CuGaSe{sub 2}. Samples with Ga-contents between 100 % and 33 % show two broad luminescence bands. In contrast, CuInSe{sub 2} exhibits only one broad luminescence band. Each band is composed of two or three different transitions. Varying excitation density over four orders of magnitude results for samples with Ga-content of 0 % and 33 % in a blueshift of the main peak with increasing excitation density. For higher Ga-concentrations, first a blue- and then a redshift of the dominating peak with increasing excitation density is visible. The temperature dependence of the PL spectra is investigated going from 4 K to 300 K.

  6. Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

    OpenAIRE

    Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

    2008-01-01

    The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

  7. Investigation of new approaches for InGaN growth with high indium content for CPV application

    Energy Technology Data Exchange (ETDEWEB)

    Arif, Muhammad; Salvestrini, Jean Paul, E-mail: salvestr@metz.supelec.fr [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Université de Lorraine & CentraleSupelec, LMOPS, EA4423, 57070 Metz (France); Sundaram, Suresh; Streque, Jérémy; Gmili, Youssef El [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Puybaret, Renaud; Voss, Paul L. [Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Belahsene, Sofiane; Ramdane, Abderahim; Martinez, Anthony; Patriarche, Gilles [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Fix, Thomas; Slaoui, Abdelillah [CNRS, ICUBE - Université de Strasbourg (France); Ougazzaden, Abdallah [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France)

    2015-09-28

    We propose to use two new approaches that may overcome the issues of phase separation and high dislocation density in InGaN-based PIN solar cells. The first approach consists in the growth of a thick multi-layered InGaN/GaN absorber. The periodical insertion of the thin GaN interlayers should absorb the In excess and relieve compressive strain. The InGaN layers need to be thin enough to remain fully strained and without phase separation. The second approach consists in the growth of InGaN nano-structures for the achievement of high In content thick InGaN layers. It allows the elimination of the preexisting dislocations in the underlying template. It also allows strain relaxation of InGaN layers without any dislocations, leading to higher In incorporation and reduced piezo-electric effect. The two approaches lead to structural, morphological, and luminescence properties that are significantly improved when compared to those of thick InGaN layers. Corresponding full PIN structures have been realized by growing a p-type GaN layer on the top the half PIN structures. External quantum efficiency, electro-luminescence, and photo-current characterizations have been carried out on the different structures and reveal an enhancement of the performances of the InGaN PIN PV cells when the thick InGaN layer is replaced by either InGaN/GaN multi-layered or InGaN nanorod layer.

  8. Dependence of Strain Distribution on In Content in InGaN/GaN Quantum Wires and Spherical Quantum Dots

    Science.gov (United States)

    Sharma, Akant Sagar; Dhar, S.

    2018-02-01

    The distribution of strain, developed in zero-dimensional quantum spherical dots and one-dimensional cylindrical quantum wires of an InGaN/GaN system is calculated as functions of radius of the structure and indium mole fraction. The strain shows strong dependence on indium mole fraction at small distances from the center. The strain associated with both the structures is found to decrease exponentially with the increase in dot or cylinder radius and increases linearly with indium content.

  9. Induction of mutants with higher protein content in soy bean

    International Nuclear Information System (INIS)

    Hiraiwa, S.; Tanaka, S.; Nakamura, S.

    1976-01-01

    Two experiments were carried out to examine the effects of ionizing radiation on protein content of soy beans and to estimate the potential value of ionizing radiation in soy bean breeding. In the first experiment seeds of three cultivars were acutely irradiated by gamma ray doses of 8 krad and 16 krad. Seeds of M 3 plants were analysed for protein content by the Biuret method. Selection within each variety was made to isolate plants having about 2% higher protein content than the control populations. In the second experiment growing plants of a soy bean cultivar were irradiated with 2.9 krad and 6.1 krad, from germination to maturation, in a 60 Co gamma field. Seeds on individual lines in M 5 , M 6 and M 7 plants were determined for their protein contents by the Kjeldahl method and the upper 10% of the treated lines were selected for progeny testing. From the results of the analysis of variance for each trait, significant differences were observed between the control variety and selected lines for all the traits. Six out of 19 lines showed significant increases in both 100 seed weight and protein content, and four lines promising. The mean protein content of selected lines increased 0.68% compared with the control variety. Genetic gain expected from selection for high protein content was therefore considered at about 1%; however, the likelihood of a large increase in protein content would greatly increase if large populations derived from irradiated seeds were observed

  10. Engineering Potato Starch with a Higher Phosphate Content.

    Directory of Open Access Journals (Sweden)

    Xuan Xu

    Full Text Available Phosphate esters are responsible for valuable and unique functionalities of starch for industrial applications. Also in the cell phosphate esters play a role in starch metabolism, which so far has not been well characterized in storage starch. Laforin, a human enzyme composed of a carbohydrate-binding module and a dual-specificity phosphatase domain, is involved in the dephosphorylation of glycogen. To modify phosphate content and better understand starch (dephosphorylation in storage starch, laforin was engineered and introduced into potato (cultivar Kardal. Interestingly, expression of an (engineered laforin in potato resulted in significantly higher phosphate content of starch, and this result was confirmed in amylose-free potato genetic background (amf. Modified starches exhibited altered granule morphology and size compared to the control. About 20-30% of the transgenic lines of each series showed red-staining granules upon incubation with iodine, and contained higher phosphate content than the blue-stained starch granules. Moreover, low amylose content and altered gelatinization properties were observed in these red-stained starches. Principle component and correlation analysis disclosed a complex correlation between starch composition and starch physico-chemical properties. Ultimately, the expression level of endogenous genes involved in starch metabolism was analysed, revealing a compensatory response to the decrease of phosphate content in potato starch. This study provides a new perspective for engineering starch phosphate content in planta by making use of the compensatory mechanism in the plant itself.

  11. Doping of GaN{sub 1-x}As{sub x} with high As content

    Energy Technology Data Exchange (ETDEWEB)

    Levander, A.X.; Novikov, S.V.; Liliental-Weber, Z.; dos Reis, R.; Dubon, O.D.; Wu, J.; Foxon, C.T.; Yu, K.M.; Walukiewicz, W.

    2011-09-22

    Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.

  12. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    OpenAIRE

    Xiao Wang; Wei Wang; Jingli Wang; Hao Wu; Chang Liu

    2017-01-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgG...

  13. Radiative recombination mechanism of carriers in InGaN/AlInGaN multiple quantum wells with varying aluminum content

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tong [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Jiao, Shujie, E-mail: shujiejiao@gmail.com [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Key Laboratory for Photonic and Electric Bandgap Materials, Ministry of Education, Harbin Normal University, Harbin 150001 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Dongbo [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Gao, Shiyong, E-mail: gaoshiyong@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yang, Tianpeng [EpiTop Optoelectronic Co., Ltd., Pingxiang 337000 (China); Liang, Hongwei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024 (China); Zhao, Liancheng [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-02-05

    Highlights: • Structural and optical properties of In GaN/Al{sub x}In{sub y}Ga{sub 1−x−y}N MQWs were investigated. • The existence of In-rich clusters has been verified by Raman spectra. • The degree of localization effect increase with increasing Al content in barriers. • The origin of the deep localized states could be assigned to the larger QCSE. • Recombination mechanism of carriers with increasing temperature has been proposed. - Abstract: The structural and optical properties of In{sub 0.20}Ga{sub 0.80}N/Al{sub x}In{sub y}Ga{sub 1−x−y}N multiple quantum wells samples with varying Al content in barrier layers grown on sapphire substrates by metalorganic chemical vapor deposition have been investigated by means of high-resolution X-ray diffraction, Raman scattering measurements and temperature-dependent photoluminescence. Raman measurements verified the existence of In-rich clusters in ternary and quaternary layers. At 10 K and 300 K, the PL spectrum of each sample is dominated by a sharp emission peak arising from In{sub 0.20}Ga{sub 0.80}N well layers. The anomalous temperature-dependent S-shaped behaviors of emission energies have been observed, indicating the presence of localized states induced by the potential fluctuations in the quantum wells due to the inhomogeneous distribution of In-rich clusters. The degree of the localization effect and the transition temperatures between different temperature regions can be enhanced by increasing Al content in barrier layers. The improvement of the localized states emission has been observed at the lower energy side of band gap emission of quantum wells with increasing Al content. The origin of the deep localized states could be attributed to the larger quantum-confined Stark effect in the quantum wells with higher Al content. The recombination mechanism of carriers between band edge and localized states was proposed for interpreting of the emission characteristics.

  14. Higher milk fat content is associated with higher 25-hydroxyvitamin D concentration in early childhood.

    Science.gov (United States)

    Vanderhout, Shelley M; Birken, Catherine S; Parkin, Patricia C; Lebovic, Gerald; Chen, Yang; O'Connor, Deborah L; Maguire, Jonathon L

    2016-05-01

    Current guidelines for cow's milk consumption in children older than age 2 years suggest 1% or 2% milk to reduce the risk of obesity. Given that milk is the main dietary source of vitamin D for North American children and that vitamin D is fat soluble, we hypothesized 25-hydroxyvitamin D (25(OH)D) concentration to be positively associated with the fat content of milk. The objective was to determine the relationship between the fat content of milk consumed and the serum 25(OH)D concentration; our secondary objective was to explore the role that the volume of milk consumed played in this relationship. We completed a cross-sectional study of children aged 12-72 months in the TARGetKids! research network. Multivariable linear regression was used to test the association between milk fat content and child 25(OH)D, adjusted for clinically relevant covariates. The interaction between volume of milk and fat content was examined. Two thousand eight hundred fifty-seven children were included in the analysis. The fat content of milk was positively associated with 25(OH)D (p = 0.03), and the interaction between the volume of milk consumed and the milk fat content was statistically significant (p = 0.005). Children who drank 1% milk needed 2.46 cups (95% confidence interval (CI) 2.38-2.54) of milk to have a 25(OH)D concentration similar to that of children who drank 1 cup of homogenized milk (3.25% fat). Children who consumed 1% milk had 2.05 (95% CI 1.73-2.42) times higher odds of having a 25(OH)D concentration <50 nmol/L compared with children who consumed homogenized milk. In conclusion, recommendations for children to drink lower-fat milk (1% or 2%) may compromise serum 25(OH)D levels and may require study to ensure optimal childhood health.

  15. Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells

    International Nuclear Information System (INIS)

    Lai, Wang; Jia-Xing, Wang; Wei, Zhao; Xiang, Zou; Yi, Luo

    2010-01-01

    Blue In 0.2 Ga 0.8 N multiple quantum wells (MQWs) with In x Ga 1–x N (x = 0.01–0.04) barriers are grown by metal organic vapour phase epitaxy. The internal quantum efficiencies (IQEs) of these MQWs are studied in a way of temperature-dependent photoluminescence spectra. Furthermore, a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres (NRCs). It is found that by adopting the InGaN barrier beneath the lowest well, it is possible to reduce the strain hence the NRCs in InGaN MQWs. By optimizing the thickness and the indium content of the InGaN barriers, the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs. On the other hand, the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously. In addition, the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation. (condensed matter: structure, thermal and mechanical properties)

  16. Damp Heat Treatment of Cu(In,GaSe2 Solar Cells with Different Sodium Content

    Directory of Open Access Journals (Sweden)

    Felix Daume

    2013-11-01

    Full Text Available Long term stability is crucial to maturing any photovoltaic technology. We have studied the influence of sodium, which plays a key role in optimizing the performance of Cu(In,GaSe2 (CIGSe solar cells, on the long-term stability of flexible CIGSe solar cells on polyimide foil. The standardized procedure of damp heat exposure (85% relative humidity at 85 °C was used to simulate aging of the unencapsulated cells in multiple time steps while they were characterized by current-voltage analysis, capacitance-voltage profiling, as well as electroluminescence imaging. By comparing the aging process to cells that were exposed to heat only, it could be confirmed that moisture plays the key role in the degradation process. We found that cells with higher sodium content suffer from a more pronounced degradation. Furthermore, the experimental results indicate the superposition of an enhancing and a deteriorating mechanism during the aging process. We propose an explanation based on the corrosion of the planar contacts of the solar cell.

  17. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    Science.gov (United States)

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  18. Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

    Science.gov (United States)

    Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

    2016-12-01

    InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

  19. Should Contentment Be a Key Aim in Higher Education?

    Science.gov (United States)

    Gibbs, Paul

    2017-01-01

    Higher education institutions are major concentrations of political, social, economic, intellectual and communicative resources. They reach freely across populations and cultures and connect to government, professions, industry and the arts. The neoliberal logic of markets has entered the realm of (higher) education. This leads to discourse on the…

  20. Should contentment be a key aim in higher education?

    OpenAIRE

    Gibbs, Paul

    2016-01-01

    Higher education institutions are major concentrations of political, social, economic, intellectual and communicative resources. They reach freely across populations and cultures, and connect to government, professions, industry and the arts. The neo-liberal logic of markets has entered the realm of (higher) education. Marketing functions centre on the creation, codification and transmission of knowledge, and the certification of graduates and the nature of education are commercialised, both ...

  1. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia; Bouzidi, Mouhamed; Touré , Alhousseynou; Gerhard, Marina; Halidou, Ibrahim; Chine, Zied; El Jani, Belgacem; Shakfa, Mohammad Khaled

    2016-01-01

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  2. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia

    2016-12-15

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  3. Rht18 Semidwarfism in Wheat Is Due to Increased GA 2-oxidaseA9 Expression and Reduced GA Content

    Czech Academy of Sciences Publication Activity Database

    Ford, B. A.; Foo, E.; Sharwood, R.; Karafiátová, Miroslava; Vrána, Jan; MacMillan, C.; Nichols, D. S.; Steuernagel, B.; Uauy, C.; Doležel, Jaroslav; Chandler, M.; Spielmeyer, W.

    2018-01-01

    Roč. 177, č. 1 (2018), s. 168-180 ISSN 0032-0889 R&D Projects: GA MŠk(CZ) LO1204; GA ČR GBP501/12/G090 Institutional support: RVO:61389030 Keywords : green-revolution * gibberellin biosynthesis * ectopic expression * common wheat * gene * rice * barley * mutant * chromosomes Subject RIV: EB - Genetics ; Molecular Biology OBOR OECD: Genetics and heredity (medical genetics to be 3) Impact factor: 6.456, year: 2016

  4. Teores de cátions dos vinhos da Serra Gaúcha Cation content of wines from the Serra Gaúcha region

    Directory of Open Access Journals (Sweden)

    Luiz Antenor Rizzon

    2008-09-01

    Full Text Available Os cátions representam uma parte das cinzas e podem contribuir para caracterizar os vinhos de diferentes regiões vitícolas. O objetivo do presente trabalho foi determinar a concentração dos principais cátions de vinhos da Serra Gaúcha, RS, visando a sua caracterização. Foram analisados 600 vinhos de mesa e 380 vinhos finos, ambos distribuídos nas categorias tinto, rosado e branco. As análises de K+, Na+, Li+ e Rb+ foram feitas por emissão de chama, enquanto que as de Ca++, Mg++, Mn++, Fe++, Cu++ e Zn++ por absorção atômica. Os dados foram submetidos à análise de variância, ao teste de Tukey e à Análise de Componentes Principais (ACP. A análise de variância não mostrou diferenças significativas nas concentrações de Na+, Cu++ e Zn++ nos diferentes tipos de vinhos da Serra Gaúcha; os vinhos de mesa apresentaram maior concentração de Mn++ em relação aos finos; os de mesa e os rosados finos apresentaram concentração mais elevada de Fe++; enquanto que os tintos finos apresentaram concentrações mais elevadas de K+ e Rb+. A ACP permitiu diferenciar os vinhos em relação à cor - tinto, rosado e branco - e ao tipo - fino e de mesa.Cations represent an important part of the ash content and they can contribute to characterize wines from different viticultural regions. The purpose of this work was to determine the concentration of the main cations in the wines of the Serra Gaúcha region in Brazil. Six hundred table wines, primarily from American/hybrid varieties, and 380 wines elaborated with Vitis vinifera varieties, both including red, rosé and white wines, were analyzed. The analyses of K+, Na+, Li+ and Rb+ were performed by flame emission, while Ca++, Mg++, Mn++, Fe++, Cu++ and Zn++ analyses were performed by atomic absorption. Data were submitted to analysis of variance and the Tukey test and to Principal Component Analysis (PCA. Results showed that there was no significant difference in the concentration of Na

  5. Determination of indium content of GaAs/(In,Ga)As/(GaAs) core-shell(-shell) nanowires by x-ray diffraction and nano x-ray fluorescence

    Science.gov (United States)

    Al Hassan, Ali; Lewis, R. B.; Küpers, H.; Lin, W.-H.; Bahrami, D.; Krause, T.; Salomon, D.; Tahraoui, A.; Hanke, M.; Geelhaar, L.; Pietsch, U.

    2018-01-01

    We present two complementary approaches to investigate the In content in GaAs/(In,Ga)As/(GaAs) core-shell-(shell) nanowire (NW) heterostructures using synchrotron radiation. The key advantage of our methodology is that NWs are characterized in their as-grown configuration, i.e., perpendicularly standing on a substrate. First, we determine the mean In content of the (In,Ga)As shell by high-resolution x-ray diffraction (XRD) from NW ensembles. In particular, we disentangle the influence of In content and shell thickness on XRD by measuring and analyzing two reflections with diffraction vector parallel and perpendicular to the growth axis, respectively. Second, we study the In distribution within individual NWs by nano x-ray fluorescence. Both the NW (111) basal plane, that is parallel to the surface of the substrate, and the {10-1} sidewall plane were scanned with an incident nanobeam of 50 nm width. We investigate three samples with different nominal In content of the (In,Ga)As shell. In all samples, the average In content of the shell determined by XRD is in good agreement with the nominal value. For a nominal In content of 15%, the In distribution is fairly uniform between all six sidewall facets. In contrast, in NWs with nominally 25% In content, different sidewall facets of the same NW exhibit different In contents. This effect is attributed to shadowing during growth by molecular beam epitaxy. At the same time, along the NW axis the In distribution is still fairly homogeneous. In NWs with 60% nominal In content and no outer GaAs shell, the In content varies significantly both between different sidewall facets and along the NW axis. This fluctuation is explained by the formation of (In,Ga)As mounds that grow simultaneously with a thinner (In,Ga)As shell. The methodology presented here may be applied also to other core-shell NWs with a ternary shell and paves the way to correlating NW structure with functional properties that depend on the as-grown configuration

  6. Highly Sensitive ZnO(Ga, In for Sub-ppm Level NO2 Detection: Effect of Indium Content

    Directory of Open Access Journals (Sweden)

    Natalia Vorobyeva

    2017-06-01

    Full Text Available Nanocrystalline ZnO, ZnO(Ga, and ZnO(Ga, In samples with different indium contents were prepared by wet-chemical method and characterized in detail by ICP-MS and XRD methods. Gas sensing properties toward NO2 were studied at 150–450 °C by DC conductance measurements. The optimal temperature for gas sensing experiments was determined. The dependence of the ZnO(Ga, In sensor signal to NO2 at 250 °C correlates with the change of conductivity of the samples. The introduction of indium into the system leads to an increase in the values of the sensor signal in the temperature range T < 250 °C. The investigation of the local sample conductivity by scanning spreading resistance microscopy demonstrates that, at high indium content, the sensor properties are determined by the In–Ga–Zn–O layer that forms on the ZnO surface.

  7. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

    International Nuclear Information System (INIS)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

    2014-01-01

    Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

  8. Elder Abuse and Neglect Content in Higher Education Programs on Aging.

    Science.gov (United States)

    Stein, Karen F.

    This study sought to: (1) investigate the degree to which course content on elder abuse and neglect is a part of higher education curriculums in aging; (2) determine which specific elder abuse and neglect course content is included in required and elective coursework; and (3) describe the attitudes of instructors toward including elder abuse and…

  9. The -29G/A FSH receptor gene polymorphism is associated with higher FSH and LH levels in normozoospermic men.

    Science.gov (United States)

    Tamburino, L; La Vignera, S; Tomaselli, V; Condorelli, R A; Cannarella, R; Mongioì, L M; Calogero, A E

    2017-10-01

    The functional role of the FSHR promoter -29G/A polymorphism (rs1394205) in men is not clear. Some studies failed to find a relationship between the FSHR -29G/A and follicle-stimulating hormone (FSH) levels and did not associate the SNP with male infertility. Only one study showed that the FSHR -29 SNP modulates serum FSH levels in Baltic young male cohort. Because the SNP -29G/A has to be shown to have a strong effect on in vitro transcription activity of the FSHR promoter and the activation of FSHR is necessary for a normal FSH function, this study was undertaken to assess whether the FSHR -29G/A SNP modulates the gonadal endocrine function in men. A total of 200 men with alteration of conventional sperm parameters or normozoospermia (according to the parameters WHO 2010), were genotyped by TaqMan Assay. Hormone levels were measured by immunoassay, and sperm analysis was performed according to the World Health Organization criteria. A significant gradient of increasing FSH levels across the FSHR -29G/A genotypes was observed (p men (n = 110), those with FSHR -29A-allele carriers (GA + AA and AA) had higher serum FSH (p men with the GG genotype. The carrier status of rs1394205 genotypes did not affect the other endocrine parameters neither in men with altered sperm parameters nor in normozoospermic men. The FSHR -29G/A polymorphism modulates FSH and, for the first time, LH serum levels and BMI in normozoospermic men. These findings underline the importance to pay close attention to the studies of genetic variations associated with clinical-endocrine parameters.

  10. Defect chalcopyrite Cu(In{sub 1-x}Ga{sub x}){sub 3}Se{sub 5} (0Ga-content Cu(In,Ga) Se{sub 2}-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Contreras, M.A.; Wiesner, H.; Niles, D.; Ramanathan, K.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} (0Ga{sub x}Se{sub 2} absorber materials is presented. Considering the chalcopyrite/defect chalcopyrite junction model, the authors postulate that the traditionally poor device performance of uniform high-Ga-content absorbers (x>0.3) is due to a relatively inferior character - both structural and electrical - at the very chalcopyrite/defect chalcopyrite interface. They demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.

  11. Content

    DEFF Research Database (Denmark)

    Keiding, Tina Bering

    secondary levels. In subject matter didactics, the question of content is more developed, but it is still mostly confined to teaching on lower levels. As for higher education didactics, discussions on selection of content are almost non-existent on the programmatic level. Nevertheless, teachers are forced...... curriculum, in higher education, and to generate analytical categories and criteria for selection of content, which can be used for systematic didactical reflection. The larger project also concerns reflection on and clarification of the concept of content, including the relation between content at the level......Aim, content and methods are fundamental categories of both theoretical and practical general didactics. A quick glance in recent pedagogical literature on higher education, however, reveals a strong preoccupation with methods, i.e. how teaching should be organized socially (Biggs & Tang, 2007...

  12. Engaging adolescents with LD in higher order thinking about history concepts using integrated content enhancement routines.

    Science.gov (United States)

    Bulgren, Janis; Deshler, Donald D; Lenz, B Keith

    2007-01-01

    The understanding and use of historical concepts specified in national history standards pose many challenges to students. These challenges include both the acquisition of content knowledge and the use of that knowledge in ways that require higher order thinking. All students, including adolescents with learning disabilities (LD), are expected to understand and use concepts of history to pass high-stakes assessments and to participate meaningfully in a democratic society. This article describes Content Enhancement Routines (CERs) to illustrate instructional planning, teaching, and assessing for higher order thinking with examples from an American history unit. Research on the individual components of Content Enhancement Routines will be illustrated with data from 1 of the routines. The potential use of integrated sets of materials and procedures across grade levels and content areas will be discussed.

  13. LEAN-GREEN MANUFACTURING: COLLABORATIVE CONTENT AND LANGUAGE INTEGRATED LEARNING IN HIGHER EDUCATION AND ENGINEERING COURSES

    Directory of Open Access Journals (Sweden)

    MARCELO RUDOLFO CALVETE GASPAR

    2017-09-01

    Full Text Available Lean and Green manufacturing processes aim at achieving lower material and labour costs, while reducing impacts on the environment, and promoting sustainability as a whole. This paper reports on a pilot experiment with higher education and engineering students, exploring the full potential of a collaborative approach on courses integrating the Portuguese Polytechnic of Castelo Branco engineering studies curricula, while simultaneously improving their proficiency in English. Content and Language Integrated Learning (CLIL has become a key area of curricular innovation since it is known for improving both language and content teacher and student motivation. In this context, instructional design for CLIL entailed tandem work of content (engineering and language (English teacher to design learning sequences and strategies. This allowed students to improve not only their language skills in English but also their knowledge in the specific engineering domain content on green and lean manufacturing processes.

  14. Exploring the Content of Instrumental Lessons and Gender Relations in Australian Higher Education

    Science.gov (United States)

    Zhukov, Katie

    2008-01-01

    This observational study analysed the lesson content of 24 instrumental lessons (piano, strings and winds) using a gender-balanced sample (equal numbers of male/female teachers and students) from five Australian higher education institutions to ascertain the priorities of topics in advanced applied music lessons in the Western Classical tradition.…

  15. Synthesis of high Al content AlxGa1−xN ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

    International Nuclear Information System (INIS)

    Cai, Hua; You, Qinghu; Hu, Zhigao; Guo, Shuang; Yang, Xu; Sun, Jian; Xu, Ning; Wu, Jiada

    2014-01-01

    Highlights: • Al x Ga 1−x N films were synthesized by co-ablation of an Al target and a GaAs target. • Nitrogen plasma was used to assist the synthesis of Al x Ga 1−x N ternary films. • The Al x Ga 1−x N films are slightly rich in N with an Al content above 0.6. • The Al x Ga 1−x N films are hexagonal wurtzite in crystal structure. • The Al x Ga 1−x N films have an absorption edge of 260 nm and a band gap of 4.7 eV. - Abstract: We present the synthesis of Al x Ga 1−x N ternary films by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in the environment of nitrogen plasma which provides nitrogen for the films and assists the formation of nitride films. Field emission scanning electron microscopy exposes the smooth surface appearance and dense film structure. X-ray diffraction, Fourier-transform infrared spectroscopy and Raman scattering spectroscopy reveal the hexagonal wurtzite structure. Optical characterization shows high optical transmittance with an absorption edge of about 260 nm and a band gap of 4.7 eV. Compositional analysis gives the Al content of about 0.6. The structure and optical properties of the Al x Ga 1−x N films are compared with those of binary GaN and AlN films synthesized by ablating GaAs or Al target with the same nitrogen plasma assistance

  16. A Content Analysis of General Chemistry Laboratory Manuals for Evidence of Higher-Order Cognitive Tasks

    Science.gov (United States)

    Domin, Daniel S.

    1999-01-01

    The science laboratory instructional environment is ideal for fostering the development of problem-solving, manipulative, and higher-order thinking skills: the skills needed by today's learner to compete in an ever increasing technology-based society. This paper reports the results of a content analysis of ten general chemistry laboratory manuals. Three experiments from each manual were examined for evidence of higher-order cognitive activities. Analysis was based upon the six major cognitive categories of Bloom's Taxonomy of Educational Objectives: knowledge, comprehension, application, analysis, synthesis, and evaluation. The results of this study show that the overwhelming majority of general chemistry laboratory manuals provide tasks that require the use of only the lower-order cognitive skills: knowledge, comprehension, and application. Two of the laboratory manuals were disparate in having activities that utilized higher-order cognition. I describe the instructional strategies used within these manuals to foster higher-order cognitive development.

  17. Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

    Science.gov (United States)

    Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A.

    2013-09-01

    We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ˜ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ˜ 0.6. Surprisingly, the InxGa1-xN film with x ˜ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (˜400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

  18. Soybean seeds expressing feedback-insensitive cystathionine γ-synthase exhibit a higher content of methionine.

    Science.gov (United States)

    Song, Shikui; Hou, Wensheng; Godo, Itamar; Wu, Cunxiang; Yu, Yang; Matityahu, Ifat; Hacham, Yael; Sun, Shi; Han, Tianfu; Amir, Rachel

    2013-04-01

    Soybean seeds provide an excellent source of protein for human and livestock nutrition. However, their nutritional quality is hampered by a low concentration of the essential sulfur amino acid, methionine (Met). In order to study factors that regulate Met synthesis in soybean seeds, this study used the Met-insensitive form of Arabidopsis cystathionine γ-synthase (AtD-CGS), which is the first committed enzyme of Met biosynthesis. This gene was expressed under the control of a seed-specific promoter, legumin B4, and used to transform the soybean cultivar Zigongdongdou (ZD). In three transgenic lines that exhibited the highest expression level of AtD-CGS, the level of soluble Met increased significantly in developing green seeds (3.8-7-fold). These seeds also showed high levels of other amino acids. This phenomenon was more prominent in two transgenic lines, ZD24 and ZD91. The total Met content, which including Met incorporated into proteins, significantly increased in the mature dry seeds of these two transgenic lines by 1.8- and 2.3-fold, respectively. This elevation was accompanied by a higher content of other protein-incorporated amino acids, which led to significantly higher total protein content in the seeds of these two lines. However, in a third transgenic line, ZD01, the level of total Met and the level of other amino acids did not increase significantly in the mature dry seeds. This line also showed no significant change in protein levels. This suggests a positive connection between high Met content and the synthesis of other amino acids that enable the synthesis of more seed proteins.

  19. Structural and electrical properties of co-evaporated Cu(In,Ga)Se{sub 2} thin films with varied Cu contents

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Young; Kim, Girim; Kim, Jongwan; Park, Jae Hwan; Lim, Donggun, E-mail: dglim@ut.ac.kr

    2013-11-01

    Cu(In,Ga)Se{sub 2} (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 × 10{sup 16} cm{sup −3}. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. - Highlights: • Improvement of technique to form Cu(In,Ga)Se{sub 2} (CIGS) film by co-evaporation method • Cu/(In + Ga) ratio to improve the efficiency for CIGS thin film solar cell • Cu content effects have been analyzed. • Optimum condition of CIGS layer as an absorber of thin film solar cells.

  20. Evaluation of consequence due to higher hydrazine content in partitioning stream of PUREX process

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, K. Suresh [Bhabha Atomic Research Centre, Mumbai (India). Special Nuclear Recycle Facility

    2016-07-01

    Hydrazine nitrate is being used as a stabilizer for U(IV) as well as Pu(III) during partitioning of Pu in PUREX process by scavenging the nitrous acid present along with nitric acid. As hydrazine hydrate as well as its salts have been successfully used for scrubbing of degradation products of TBP to aqueous phase, experiments were conducted to evaluate the consequence of hydrazine content during Pu partitioning. It was observed that higher amount of hydrazine nitrate along with uranous nitrate in the partitioning stream of PUREX process leads to build up of DBP in aqueous phase and resulted in precipitation of Pu.

  1. Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge

    International Nuclear Information System (INIS)

    Terasako, Tomoaki; Nomoto, Junichi; Makino, Hisao; Yamamoto, Naoki; Shirakata, Sho; Yamamoto, Tetsuya

    2015-01-01

    Structural properties of highly c-axis oriented polycrystalline Ga-doped ZnO (GZO) films prepared by ion-plating with a DC arc discharge were studied in terms of the oxygen gas flow rate (F O2 ) introduced into the chamber during the deposition process and the Ga 2 O 3 content in the GZO sintered pellet. The X-ray diffraction (XRD) measurements revealed that the GZO films have the residual compressive stress along the a-axis direction (in-plane) and the tensile stress along the c-axis direction (out-of-plane). The increase in F O2 or the increase in Ga 2 O 3 content was effective for relaxing the in-plane compressive stress induced by the so-called atomic peening effect. The positive correlation between the carrier concentration (n) and the primitive cell volume (V) would be due to the incorporation of Ga atoms substituting Zn sites (Ga Zn s) together with the generation of n-type intrinsic defects or complex defects. - Highlights: • Films of Ga-doped ZnO (GZO) films were deposited by ion-plating with a DC arc discharge. • Structural properties of GZO films were examined by X-ray diffraction measurements. • GZO films had the residual compressive stress along the a-axis direction. • There was the correlation between the carrier concentration and the cell volume.

  2. Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge

    Energy Technology Data Exchange (ETDEWEB)

    Terasako, Tomoaki, E-mail: terasako.tomoaki.mz@ehime-u.ac.jp [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Nomoto, Junichi; Makino, Hisao; Yamamoto, Naoki [Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan); Shirakata, Sho [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Yamamoto, Tetsuya [Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan)

    2015-12-01

    Structural properties of highly c-axis oriented polycrystalline Ga-doped ZnO (GZO) films prepared by ion-plating with a DC arc discharge were studied in terms of the oxygen gas flow rate (F{sub O2}) introduced into the chamber during the deposition process and the Ga{sub 2}O{sub 3} content in the GZO sintered pellet. The X-ray diffraction (XRD) measurements revealed that the GZO films have the residual compressive stress along the a-axis direction (in-plane) and the tensile stress along the c-axis direction (out-of-plane). The increase in F{sub O2} or the increase in Ga{sub 2}O{sub 3} content was effective for relaxing the in-plane compressive stress induced by the so-called atomic peening effect. The positive correlation between the carrier concentration (n) and the primitive cell volume (V) would be due to the incorporation of Ga atoms substituting Zn sites (Ga{sub Zn}s) together with the generation of n-type intrinsic defects or complex defects. - Highlights: • Films of Ga-doped ZnO (GZO) films were deposited by ion-plating with a DC arc discharge. • Structural properties of GZO films were examined by X-ray diffraction measurements. • GZO films had the residual compressive stress along the a-axis direction. • There was the correlation between the carrier concentration and the cell volume.

  3. Making User-Generated Content Communities Work in Higher Education - The Importance of Setting Incentives

    Science.gov (United States)

    Vom Brocke, Jan; White, Cynthia; Walker, Ute; Vom Brocke, Christina

    The concept of User-Generated Content (UGC) offers impressive potential for innovative learning and teaching scenarios in higher education. Examples like Wikipedia and Facebook illustrate the enormous effects of multiple users world-wide contributing to a pool of shared resources, such as videos and pictures and also lexicographical descriptions. Apart from single examples, however, the systematic use of these virtual technologies in higher education still needs further exploration. Only few examples display the successful application of UGC Communities at university scenarios. We argue that a major reason for this can be seen in the fact that the organizational dimension of setting up UGC Communities has widely been neglected so far. In particular, we indicate the need for incentive setting to actively involve students and achieve specific pedagogical objectives. We base our study on organizational theories and derive strategies for incentive setting that have been applied in a practical e-Learning scenario involving students from Germany and New Zealand.

  4. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    International Nuclear Information System (INIS)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva

    2012-01-01

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Developing Accounting Information System Course Content for Iraqi Higher Education Institution: An Instrument Design

    Directory of Open Access Journals (Sweden)

    Naseem Yousif Hanna Lallo

    2013-07-01

    Full Text Available In ensuring that competent graduates are produced in the universities, the course used embedding knowledge in the students, mindsets needs to be effective. However, the unusual circumstances that happened in Iraq were affected on a universities course. The revolution in information technology (IT affects most of our activations. As a result, it is important to consider the impact of IT on accounting careers. Developing accenting information system course content can generate an accountant who is armed with the knowledge and skills before entering accounting job. Also the development process required instructors have characteristics that make the integrating process of IT knowledge components in AIS course content more smoothly. Iraq is the country facing many difficulties that makes its higher education institutions (HEIs suffered from un updated learning environment and technological backwardness. This causes a low level of accounting graduates’ knowledge and in turn leads to led to consider the Iraqi accountant incapable of working with international organizations and companies or conducting was it professionally. The aim of this paper is to explain the role of IT knowledge elements in developing AIS course content in Iraqi HEIs with considering the moderate effect of the instructors’ characteristics. Furthermore, this paper discusses the development and validation of the quantitative instrument (questionnaire for IT knowledge elements in Iraqi HEIs. Moreover, the reliability of the constructs is also discussed.

  7. Co-conversion of Ethane and Methanol into Higher Hydrocarbons over Ga/H-ZSM-5, Mo/H-ZSM-5 and Ga-Mo/H-ZSM-5

    DEFF Research Database (Denmark)

    Mentzel, Uffe Vie; Rovik, Anne; Christensen, Claus H.

    2009-01-01

    Ethane and methanol are converted simultaneously over Ga/H-ZSM-5, Mo/H-ZSM-5 and Ga-Mo/H-ZSM-5 to produce light olefins and aromatics. The presence of methanol in the reactant stream is intended to facilitate activation of ethane following literature reports on co-conversion of methane and methan...... and in the carbonaceous compounds deposited on the catalysts. This indicates that both reactants take part in the formation of the hydrocarbon pool, which is the origin of all products....

  8. Analysis of the effect of gallium content on the magnetomechanical behavior of single-crystal FeGa alloys using an energy-based model

    International Nuclear Information System (INIS)

    Atulasimha, Jayasimha; Flatau, Alison B; Cullen, James R

    2008-01-01

    The magnetomechanical behavior of single-crystal iron–gallium alloys with varying gallium content was found to be strongly dependent on the Ga content (Atulasimha 2006 PhD Thesis). An energy-based model (Atulasimha 2006 PhD Thesis, Armstrong and William 1997 J. Appl. Phys. 81 2321) is employed to simulate the strikingly different actuation behavior (λ–H and B–H curves under different compressive stresses) and validated against experimental data for 19, 24.7 and 29 at.% Ga, [100] oriented, slow-cooled single-crystal FeGa alloys. The effect of gallium content on the model parameters, specifically the cubic magnetocrystalline anisotropy constants and the Armstrong-smoothing factor Ω, their physical significance and ultimately their effect on the magnetomechanical behavior are analyzed and explained

  9. Extended x-ray absorption fine structure in Ga1-xMnxN/SiC films with high Mn content

    Science.gov (United States)

    Sancho-Juan, O.; Martínez-Criado, O.; Cantarero, A.; Garro, N.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.; Ploog, K.

    2011-05-01

    In this study, the local atomic structure of highly homogeneous Ga1-xMnxN alloy films (0.03Ga K-edge extended x-ray absorption fine structure measurements. From the curve fitting, the structural parameters corresponding to the first two atomic shells surrounding both Ga and Mn atoms are reported. In the Ga1-xMnxN films, grown by molecular beam epitaxy, the Mn atoms are in tetrahedral configuration, independent of the Mn concentration; that is, they are in a substitutional site, MnGa, in the wurtzite structure. A small increase in the interatomic distances has been found with increasing Mn content. The Debye-Waller factor does not show a significant trend as Mn content increases, which suggests the presence of short-range disorder in the GaN lattice. Ab initio calculations of the structural parameter for two different Mn concentrations are consistent with the experimental results.

  10. Indian girls have higher bone mineral content per unit of lean body than boys through puberty.

    Science.gov (United States)

    Khadilkar, Anuradha V; Sanwalka, Neha; Mughal, M Zulf; Chiplonkar, Shashi; Khadilkar, Vaman

    2018-05-01

    Our aim is to describe changes in the muscle-bone unit assessed as a ratio of bone mineral content (BMC) to lean body mass (LBM) through puberty at total body and various skeletal sites in Indian boys and girls. A cross-sectional study was conducted (888 children, 480 boys, aged 5-17 years) in Pune, India. Pubertal staging was assessed. BMC, LBM and fat percentage at the arms, legs, android, gynoid and total body (less the head) were assessed by dual energy X-ray absorptiometry. The amount of BMC per unit LBM (BMC/LBM) was computed. Changes in mean BMC/LBM at 5 Tanner (pubertal) stages after adjustment for age and fat percentage were calculated. In boys, adjusted BMC/LBM was significantly higher with successive Tanner stages [legs (TS-II vs TS-I), android (TS-III vs TS-II, TS-IV vs TS-III) and gynoid region (TS-III vs TS-II and TS-II vs TS-I) (p LBM was significantly higher with successive Tanner stages at total body, legs and gynoid (TS-III vs TS-II; TS-II vs TS-I; TS-V vs TS-IV), arms (TS-I to TS-V) and android regions (TS-V vs TS-IV) (p LBM than girls at earlier Tanner stages (TS-I to TS-III), whereas girls had significantly higher adjusted BMC/LBM than boys at later Tanner stages (TS-IV, TS-V) (p LBM with successive pubertal stages. Girls had higher BMC/LBM than boys which may possibly act as a reservoir for later demands of pregnancy and lactation.

  11. Brazilian savanna fruits contain higher bioactive compounds content and higher antioxidant activity relative to the conventional red delicious apple.

    Directory of Open Access Journals (Sweden)

    Egle Machado de Almeida Siqueira

    Full Text Available The bioactive compounds content and the antioxidant activity (AA of twelve fruits native to the Cerrado were compared with the Red Delicious apple by means of the antiradical efficiency (using the 2,2-diphenyl-1-picrylhydrazil assay/DPPH, ferric reducing antioxidant power (FRAP and the β-carotene/linoleic system. The antiradical efficiency (AE and the kinetic parameters (Efficient concentration/EC50 and time needed to reach the steady state to EC50 concentration/TEC50 of the DPPH curve were also evaluated for comparison with the Trolox equivalent (TE values. A strong, significant and positive correlation was observed between the TE and AE values, whereas a weak and negative correlation was observed between TE and EC50, suggesting that the values of AE and TE are more useful for the determination of antiradical activity in fruits than the widely used EC50. The total phenolic content found in the fruits corresponded positively to their antioxidant activity. The high content of bioactive compounds (flavanols, anthocyanins or vitamin C relative to the apple values found in araticum, cagaita, cajuzinho, jurubeba, lobeira, magaba and tucum corresponded to the high antioxidant activity of these fruits. Flavanols and anthocyanins may be the main bioactive components in these Cerrado fruits. The daily consumption of at least seven of the twelve Cerrado fruits studied, particularly, araticum, cagaita, lobeira and tucum, may confer protection against oxidative stress, and thus, they may prevent chronic diseases and premature aging. The findings of this study should stimulate demand, consumption and cultivation of Cerrado fruits and result in sustainable development of the region where this biome dominates.

  12. Pedagogical Content Knowledge (PCK): Exploring its Usefulness for Science Lecturers in Higher Education

    Science.gov (United States)

    Fraser, Sharon P.

    2016-02-01

    In the past 30 years, pedagogical content knowledge (PCK) frameworks have become important constructs in educational research undertaken in the school education system and a focus for research for curriculum and teacher education researchers. As regards science, PCK research has been plentiful, but thus far, the concept of PCK (significantly enhanced since its proposal) has only been validated in the school context (Kindergarten to Grade 12). Within this environment, however, it has proven to be a very useful construct for understanding teacher practice and contributing to the improvement of teacher education courses. Knowledge about whether PCK is useful as a conceptual framework for science lecturers (teachers) working in higher education is as yet unknown and represents a gap in the research literature; the research outlined here is a first step in exploring its usefulness in this context. This paper provides an analysis of data obtained from semi-structured interviews conducted with nine Australian science university lecturers from various disciplines and levels of seniority and experience of tertiary teaching, as well as an academic developer skilled in facilitating science academics' understanding of pedagogy in higher education. The research aimed to investigate the extent to which one version of a school-based science PCK framework resonated with the pedagogical thinking of university science lecturers and the ways in which it could influence their teaching practice.

  13. Effect of Thiamine, Ascorbic acid and Gibberellic acid (GA3 on Growth Characteristics, Pigment Content and Reduced Sugars of Petunia

    Directory of Open Access Journals (Sweden)

    moslem salehi

    2017-02-01

    Full Text Available Introduction: Bedding plants, especially petunia is important element for urban landscaping and attracted the attention of landscapers. This is due to some properties such as growth habit and color. The petunia (Petunia hybrida L. belongs to Solanaceae family that has annual and perennial varieties. This plant is originally from Argentina, Brazil and Uruguay. Some plant growth regulators such as gibberellic acid (GA3 and vitamins including thiamine and ascorbic acid affect plant growth and development and may extend flowering period. Vitamin C affects cell division and cell growth in plants and is effective on the feeding cycle activity in higher plants and it has an important role in electron transport system. The concentrations of 50 and 100 ppm of vitamin C and thiamine can increase the plant height, leaf number, leaf area, fresh and dry weight, and chemical compounds of the Syngonium plant. The application of 100 mg/l of GA3 significantly increased plant height and the number of leaves of gladiolus. Material and methods: The experiment was arranged in a factorial based on a completely randomized design with five replications. In this research, growth characteristics (lateral branch number, flower number, flower diameter, stem diameter, root length, and lateral branch length and biochemical characteristics (chlorophyll a, chlorophyll b, total chlorophyll, carotenoids, and reducing sugar were measured. After seeding and transplanting the seedling at 6 leaf stage, plants sprayed at 4 various growth stages with following treatments: 1-\tControl 2-\tVitamin C(100 mg/l 3-\tThiamin (100 mg/l 4-\tGibberellic acid (100 mg/l 5-\tVitamin C and Thiamin (The concentration of both 100 mg/l 6-\tVitamin C and Gibberellic acid (The concentration of both 100 mg/l 7-\tThiamin and Gibberellic acid (The concentration of both 100 mg/l 8-\tVitamin C, Thiamin and Gibberellic acid (The concentration of three 100 mg/l Data obtained from the measured parameters

  14. The association of personal semantic memory to identity representations: insight into higher-order networks of autobiographical contents.

    Science.gov (United States)

    Grilli, Matthew D

    2017-11-01

    Identity representations are higher-order knowledge structures that organise autobiographical memories on the basis of personality and role-based themes of one's self-concept. In two experiments, the extent to which different types of personal semantic content are reflected in these higher-order networks of memories was investigated. Healthy, young adult participants generated identity representations that varied in remoteness of formation and verbally reflected on these themes in an open-ended narrative task. The narrative responses were scored for retrieval of episodic, experience-near personal semantic and experience-far (i.e., abstract) personal semantic contents. Results revealed that to reflect on remotely formed identity representations, experience-far personal semantic contents were retrieved more than experience-near personal semantic contents. In contrast, to reflect on recently formed identity representations, experience-near personal semantic contents were retrieved more than experience-far personal semantic contents. Although episodic memory contents were retrieved less than both personal semantic content types to reflect on remotely formed identity representations, this content type was retrieved at a similar frequency as experience-far personal semantic content to reflect on recently formed identity representations. These findings indicate that the association of personal semantic content to identity representations is robust and related to time since acquisition of these knowledge structures.

  15. Synthesis of Higher Alcohols via Syngas on Cu/Zn/Si Catalysts. Effect of Polyethylene Glycol Content

    Science.gov (United States)

    Cui, Rong-Ji; Yan, Xing; Fan, Jin-Chuan; Huang, Wei

    2018-05-01

    Cu/Zn/Si catalysts with different polyethylene glycol (PEG) content were prepared by a complete liquid-phase method, and characterized by XRD, H2-TPR, N2-adsorption, and XPS. The influence of PEG content on the higher alcohols synthesis from syngas was investigated. The results showed that addition of PEG can influence the texture and surface properties of the catalysts, and therefore affect their activity and product distribution. With an increase in PEG content, BET surface area, Cu crystallite size and surface active ingredient content of the catalysts first increased and then decreased, the CO conversion had similar variation tendency. However, the pore volume and pore diameter of the catalyst increased, and the binding energy of the active component and the content of Cu2O decreased, which resulted in higher catalyst selectivity towards higher alcohols. The highest C2+OH selectivity in total alcohols was 60.6 wt %.

  16. Evolution of phase transformation and magnetic properties with Fe content in Ni55-x Fe x Mn20Ga25 Heusler alloys

    Science.gov (United States)

    Zhang, Yuanlei; Li, Zhe; He, Xijia; Huang, Yinsheng; Xu, Kun; Jing, Chao

    2018-02-01

    A series of Ni55-x Fe x Mn20Ga25 (0  ⩽  x  ⩽  5) Heusler alloys was prepared to investigate their phase transitions and magnetic properties. At room temperature, these alloys present various crystal structures, and the unit cell volume enlarges with increase of Fe content in both austenite and martensite. Multiple magneto-structural transformations were observed in the parent alloy (x  =  0). In the process of cooling, it undergoes martensitic transformation (MT) from L21-type paramagnetic austenite to L10-type ferromagnetic martensite, accompanying an intermartensitic transformation (IMT, 7M  →  L10). By establishing a detailed phase diagram, we found that both MT and IMT shift to lower temperature simultaneously, while the ferromagnetic (FM) transition of austenite moves to higher temperature as Fe increases. With the further increase of Fe content beyond a critical value, both the IMT and the FM transitions split off from MT, and the former follows with the transforming sequence of 7M  →  5M. Based on the experimental data, some key magnetic parameters have been obtained in this system. The calculated magnetocrystalline anisotropy constant ({{K}1} ) of martensite quickly increases as Fe increases, and then it almost reaches a saturated value (~5.5  ×  105 J m-3) for the alloys with x  >  3. However, the spontaneous magnetic moment ({μs} ) attains a peak value of about 4.2 μ B/f.u. in the alloy with x  =  4, which is not consistent with the linear increasing of effective magnetic moment ({μef f} ). Further magnetic measurements with hydrostatic pressure indicate that such a discrepancy could be ascribed to the competition between the magnetic exchange interaction and the volume change of unit cell governed by the dopant Fe content.

  17. Characteristics and properties of cladding tubes for VVER-1000 higher Uranium content fuel rods

    International Nuclear Information System (INIS)

    Peregud, M.; Markelov, A.; Novikov, V.; Gusev, A.; Konkov, V.; Pimenov, Y.; Agapitov, V.; Shtutsa, M.

    2009-01-01

    To improve the fuel cycle economics and to further increase the VVER fuel usability the work programme is under way to design novel improved fuel, fuel rods and fuel assemblies. Longer FA operation time that is needed to increase the fuel burnup and the related design developments of novel fuel assemblies resulted not only in changing types and sizes of Zirconium items and fuel assembly components but also altered the requirements placed on their technical characteristics. To use fuel rods having a larger charge of fuel, to improve their behaviour in LOCA, to reduce fuel rod damage ability during assembling the work was carried out to perfect the characteristics of both the cladding (reduced wall thickness and more rigid tolerances for geometry) and its material. To meet the more rigid requirements for the geometry dimensions of cladding tubes an improved process flow sheet has been designed and employed for their fabrication and also the finishing treatment of tube surfaces has been improved. The higher and stable properties of the cladding materials were managed through using the special purity in terms of Hafnium Zirconium (not higher than 100 ppm Hf) as a base of the E110 alloy and maintaining within the valid specifications for the alloy the optimized contents of Oxygen and Iron at the levels of (600 - 990) ppm and (250 - 700) ppm, respectively. The work was under way in 2004 - 2008 years; during this period the technology and materials science solutions were mastered that were phased-in introduced into the production of the cladding tubes for the fuels loaded into the of the Kalinin NPP Unit 1

  18. Development of assessment methods for transport and storage containers with higher content of metallic recycling material

    International Nuclear Information System (INIS)

    Zencker, U.; Qiao Linan; Droste, B.

    2004-01-01

    The mechanical behaviour of transport and storage containers made of ductile cast iron melted with higher content of metallic recycling material from decommissioning and dismantling of nuclear installations is investigated. With drop tests of cubic container-like models, the influence of different real targets on the stresses in the cask body and the fracture behaviour is examined. A test stand foundation is suggested, which can be manufactured simply and improves the reproducibility of the test results strongly. The test objects are partially equipped with artificial cracklike defects. Dynamic fracture mechanics analyses of these defects were performed by means of finite element calculations to uncover safety margins. Numerous test results show depending on the requirements that containers for final disposal can be built by means of a ductile cast iron with fracture toughness more than half under the lower bound value for the licensed material qualities yet. The application limits of the material are determined also by the opportunities of the safety assessment methods. This project supports the application of brittle fracture safe transport and storage packages for radioactive materials as recommended in App. VI of the Advisory Material for the IAEA Regulations for the Safe Transport of Radioactive Material (IAEA No. TS-G-1.1)

  19. Shape Memory Polymers Containing Higher Acrylate Content Display Increased Endothelial Cell Attachment

    Science.gov (United States)

    Govindarajan, Tina; Shandas, Robin

    2018-01-01

    Shape Memory Polymers (SMPs) are smart materials that can recall their shape upon the application of a stimulus, which makes them appealing materials for a variety of applications, especially in biomedical devices. Most prior SMP research has focused on tuning bulk properties; studying surface effects of SMPs may extend the use of these materials to blood-contacting applications, such as cardiovascular stents, where surfaces that support rapid endothelialization have been correlated to stent success. Here, we evaluate endothelial attachment onto the surfaces of a family of SMPs previously developed in our group that have shown promise for biomedical devices. Nine SMP formulations containing varying amounts of tert-Butyl acrylate (tBA) and Poly(ethylene glycol) dimethacrylate (PEGDMA) were analyzed for endothelial cell attachment. Dynamic mechanical analysis (DMA), contact angle studies, and atomic force microscopy (AFM) were used to verify bulk and surface properties of the SMPs. Human umbilical vein endothelial cell (HUVEC) attachment and viability was verified using fluorescent methods. Endothelial cells preferentially attached to SMPs with higher tBA content, which have rougher, more hydrophobic surfaces. HUVECs also displayed an increased metabolic activity on these high tBA SMPs over the course of the study. This class of SMPs may be promising candidates for next generation blood-contacting devices. PMID:29707382

  20. Development of assessment methods for transport and storage containers with higher content of metallic recycling material

    Energy Technology Data Exchange (ETDEWEB)

    Zencker, U.; Qiao Linan; Droste, B. [Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin (Germany)

    2004-07-01

    The mechanical behaviour of transport and storage containers made of ductile cast iron melted with higher content of metallic recycling material from decommissioning and dismantling of nuclear installations is investigated. With drop tests of cubic container-like models, the influence of different real targets on the stresses in the cask body and the fracture behaviour is examined. A test stand foundation is suggested, which can be manufactured simply and improves the reproducibility of the test results strongly. The test objects are partially equipped with artificial cracklike defects. Dynamic fracture mechanics analyses of these defects were performed by means of finite element calculations to uncover safety margins. Numerous test results show depending on the requirements that containers for final disposal can be built by means of a ductile cast iron with fracture toughness more than half under the lower bound value for the licensed material qualities yet. The application limits of the material are determined also by the opportunities of the safety assessment methods. This project supports the application of brittle fracture safe transport and storage packages for radioactive materials as recommended in App. VI of the Advisory Material for the IAEA Regulations for the Safe Transport of Radioactive Material (IAEA No. TS-G-1.1).

  1. Shape Memory Polymers Containing Higher Acrylate Content Display Increased Endothelial Cell Attachment

    Directory of Open Access Journals (Sweden)

    Tina Govindarajan

    2017-11-01

    Full Text Available Shape Memory Polymers (SMPs are smart materials that can recall their shape upon the application of a stimulus, which makes them appealing materials for a variety of applications, especially in biomedical devices. Most prior SMP research has focused on tuning bulk properties; studying surface effects of SMPs may extend the use of these materials to blood-contacting applications, such as cardiovascular stents, where surfaces that support rapid endothelialization have been correlated to stent success. Here, we evaluate endothelial attachment onto the surfaces of a family of SMPs previously developed in our group that have shown promise for biomedical devices. Nine SMP formulations containing varying amounts of tert-Butyl acrylate (tBA and Poly(ethylene glycol dimethacrylate (PEGDMA were analyzed for endothelial cell attachment. Dynamic mechanical analysis (DMA, contact angle studies, and atomic force microscopy (AFM were used to verify bulk and surface properties of the SMPs. Human umbilical vein endothelial cell (HUVEC attachment and viability was verified using fluorescent methods. Endothelial cells preferentially attached to SMPs with higher tBA content, which have rougher, more hydrophobic surfaces. HUVECs also displayed an increased metabolic activity on these high tBA SMPs over the course of the study. This class of SMPs may be promising candidates for next generation blood-contacting devices.

  2. Lattice vibrations study of Ga1-xInxAsySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy

    International Nuclear Information System (INIS)

    Olvera-Herandez, J; Olvera-Cervantes, J; Rojas-Lopez, M; Navarro-Contreras, H; Vidal, M A; Anda, F de

    2006-01-01

    Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga 1-x In x As y Sb 1-y alloys with low (In, As) contents (0.03 0 C. High Resolution X-Ray Diffraction results showed profiles associated with a quaternary layer lattice matched to the GaSb substrate as obtained from the (004) reflection. The experimental diffractograms were simulated to estimate alloy composition, thickness and lattice mismatch of the layer. Raman scattering results show phonon frequencies associated to the TO and LO GaAs-like modes as well as GaSb + InAs-like mode, which are characteristic of this quaternary alloy. The As content dependence of the phonon frequency measured in this alloy for low (In, As) contents agree well with the modified Random-Element Isodisplacement (REI) model and also with other available experimental reports. This method can also be used to estimate alloy compositions for this kind of quaternary alloys

  3. Ceramide content is higher in type I compared to type II fibers in obesity and type 2 diabetes mellitus

    DEFF Research Database (Denmark)

    Kristensen, Ditte Bech; Prats Gavalda, Clara; Larsen, Steen

    2012-01-01

    This study investigated fiber-type-specific muscle ceramide content in obese subjects and type 2 diabetes patients. Two substudies, one which compared type 2 diabetes patients to both lean- and obese BMI-matched subjects and the other study which compared lean body-matched post-obese, obese......, and control subjects, were performed. A fasting blood sample was obtained and plasma insulin and glucose determined. A muscle biopsy was obtained from deltoideus and vastus lateralis, and fiber-type ceramide content was determined by fluorescence immunohistochemistry. Insulin sensitivity estimated by Quicki...... index was higher in lean compared to type 2 diabetes patients and obese controls. Also in control and post-obese subjects, a higher insulin sensitivity was observed compared to obese subjects. Ceramide content was consistently higher in type I than in type II muscle fibers and higher in deltoideus than...

  4. An approach to breeding for higher protein content in bread wheat

    International Nuclear Information System (INIS)

    Jain, H.K.; Singhal, N.C.; Singh, M.P.; Austin, A.

    1975-01-01

    This study deals with the development of a suitable experimental approach for improving the protein content of seeds in bread wheat. It has been found that scoring of protein content on a per seed basis rather than as a percentage of seed weight gives better results. In the first place, the heritability of protein content increases nearly three times when scoring is done on the basis of seed number. Also, protein content scored in this way showed a significant positive correlation with seed size. Correlation between seed size and percentage of protein in the seed is negative. An important implication of these findings is that scoring of protein content on the basis of seed number should help to avoid selection of genotypes showing reduced starch synthesis and, therefore, a lower yield of grains as well as protein on a per acre basis. Also, the observations suggest that selection for larger seed size may be an important means of improving the protein content of wheat. These and other implications are discussed. (author)

  5. Some physical properties of GaX (X=P, As and Sb) semiconductor compounds using higher-order perturbation theory

    International Nuclear Information System (INIS)

    Jivani, A.R.; Trivedi, H.J.; Gajjar, P.N.; Jani, A.R.

    2005-01-01

    Recently proposed model potential for describing the electron-ion interaction is employed to calculate total energy, energy band gap at Jones-zone face at X, equation of state and bulk modulus of GaP, GaAs and GaSb compounds using higher-order perturbation theory. The covalent correction term corresponding to third- and fourth-order perturbation energy terms are used to take account of covalent bonding effect in such semiconductors. The significant value of the covalent bonding term shows the essentiality of higher-order correction for zincblende-type crystals. We have employed five different screening functions along with the latest screening function proposed by Sarkar et al. in the present work. The numerical results for the total energy, energy band gap at Jones-zone face and bulk modulus of these compounds are in good agreement with the experimental data and found better than other such theoretical findings. The pressure and bulk modulus at different volumes are obtained by using such higher-order perturbation theory with the application of our model potential. The pressure obtained by this method is compared with pressure obtained by equations proposed by Murnarghan and Vinet et al. The present study also shows that the incorporation of different screening functions generates distinct effects

  6. Pre-Service Teachers' Mathematics Content Knowledge: Implications for How Mathematics Is Taught in Higher Education

    Science.gov (United States)

    Lowrie, Tom; Jorgensen, Robyn

    2016-01-01

    This investigation explored pre-service teachers' mathematics content knowledge (MCK) and beliefs associated with mathematics education practices. An Exploratory Factor Analysis, conducted on a beliefs and attitudes questionnaire, produced three common attitude factors associated with (1) inquiry-based teaching; (2) how mathematics knowledge is…

  7. Facilitating LGBT Medical, Health and Social Care Content in Higher Education Teaching

    Science.gov (United States)

    Davy, Zowie; Amsler, Sarah; Duncombe, Karen

    2015-01-01

    Increasingly, Lesbian, Gay, Bisexual, and Transgender (LGBT) health care is becoming an important quality assurance feature of primary, secondary and tertiary healthcare in Britain. While acknowledging these very positive developments, teaching LGBT curricula content is contingent upon having educators understand the complexity of LGBT lives. The…

  8. Facilitating LGBT Medical, Health and Social Care Content in Higher Education Teaching

    Directory of Open Access Journals (Sweden)

    Zowie Davy

    2015-06-01

    Full Text Available Increasingly, Lesbian, Gay, Bisexual, and Transgender (LGBT health care is becoming an important quality assurance feature of primary, secondary and tertiary healthcare in Britain. While acknowledging these very positive developments, teaching LGBT curricula content is contingent upon having educators understand the complexity of LGBT lives. The study adopted a qualitative mixed method approach. The study investigated how and in what ways barriers and facilitators of providing LGBT medical, health and social care curricula content figure in the accreditation policies and within undergraduate and postgraduate medical and healthcare teaching. This paper illustrates opposing views about curricula inclusion. The evidence presented suggests that LGBT content teaching is often challenged at various points in its delivery. In this respect, we will focus on a number of resistances that sometimes prevents teachers from engaging with and providing the complexities of LGBT curricula content. These include the lack of collegiate, colleague and student cooperation. By investing some time on these often neglected areas of resistance, the difficulties and good practice met by educators will be explored. This focus will make visible how to support medical, health and social care students become aware and confident in tackling contemporaneous health issues for LGBT patients.

  9. Curriculum Mapping in Higher Education: A Case Study and Proposed Content Scope and Sequence Mapping Tool

    Science.gov (United States)

    Arafeh, Sousan

    2016-01-01

    Best practice in curriculum development and implementation requires that discipline-based standards or requirements embody both curricular and programme scopes and sequences. Ensuring these are present and aligned in course/programme content, activities and assessments to support student success requires formalised and systematised review and…

  10. Are Mergers a Win-Win Strategic Model? A Content Analysis of Inter-Institutional Collaboration between Higher Education Institutions

    Science.gov (United States)

    Ripoll-Soler, Carlos; de-Miguel-Molina, María

    2014-01-01

    The main goal of this paper, based on a content analysis of the literature about models of inter-institutional collaboration between higher education institutions, is to establish the characteristics that set them apart, contextualize each of these models in terms of the features of the setting in which they are implemented, and ascertain their…

  11. Submerged Cultivation of Mycelium with High Ergothioneine Content from the Culinary-Medicinal Golden Oyster Mushroom, Pleurotus citrinopileatus (Higher Basidiomycetes).

    Science.gov (United States)

    Lin, Shin-Yi; Chien, Shih-Chang; Wang, Sheng-Yang; Mau, Jeng-Leun

    2015-01-01

    The optimization of submerged culture of the culinary-medicinal golden oyster mushroom, Pleurotus citrinopileatus, was studied using a one-factor-at-a-time, two-stage stimulation and central composite rotatable design to produce mycelia with high ergothioneine content. The optimal culture conditions for mycelia harvested at day 22 were a temperature of 25°C, an inoculation ratio of 5%, 2% glucose, 0.5% yeast extract, and adjustment of the initial pH value to 10. The biomass and ergothioneine content were 8.28 g/L and 10.65 mg/g dry weight (dw), respectively. The addition of an amino acid precursor increased the ergothioneine content of mycelia; cysteine was the most effective. In addition, the results obtained from central composite rotatable design showed that the recommended combination for cysteine, histidine, and methionine was 8, 4, and 0.5 mmol/L, respectively. The predicted ergothioneine content was 13.90 mg/g dw, whereas the experimental maximal ergothioneine content was 14.57 mg/g dw. With the addition of complex precursors and under optimal culture conditions, mycelia harvested at days 16-20 had higher ergothioneine content. Accordingly, the information obtained could be used to produce mycelia with high ergothioneine content.

  12. Cytogenetic studies of marine organisms in the areas with higher contents of natural radionuclides

    International Nuclear Information System (INIS)

    Tsytsugina, V.G.; Floru, Kh.; Polikarpov, G.G.; Chalulu, K.; Gorbenko, V.P.

    2004-01-01

    Chromosome aberrations in cells of marine crustaceans and worms have been studied at sites with a high natural radioactivity level (the Black Sea coast at the mountain Karadag in the Crimea and the Ikaria Island in the Aegean Sea, an area around the hydrothermal spa) as well as at sites with the normal natural radiation level. Higher level of chromosome mutagenesis was found in cells of Melita palmata embryos and in germ and somatic cells of Lycastopsis sp. juveniles in the area around the spa. Probably, chromosome aberrations were induced by higher concentrations of natural radionuclides and their radiation in the environment

  13. Technologies for a content and language integrated approach to dropout problems in Higher Education

    NARCIS (Netherlands)

    Marjolein Simons; Dr. Hajer Maaike; Ton Koenraad; Rintse van der Werf

    2006-01-01

    This paper reports on CATS (2006-2007), a project initiated by the Research Centre ‘Teaching in Multicultural Schools’, that addresses language related dropout problems of both native and non-native speakers of Dutch in higher education. The project’s main objective is to develop a model for the

  14. The concept of structure and content of health related trainings for higher educational establishments’ students

    OpenAIRE

    Yu.A. Kopylov; L.N. Jackowska; M.D. Kudryavtsev; V.A. Kuzmin; I.A. Tolstopyatov; S. S. Iermakov

    2015-01-01

    Purpose: analysis of modern directions of physical culture education scientific and practical problems’ solution in higher educational establishment of health related orientation. Material: analysis of publications in scientific journals. Results: we have shown significance of student’s physical functioning as the basis of his motor, coordination and mental qualities’ development. Main difficulties of existing physical education practice have been cleared up. It has been found that prevailing...

  15. Structure, Content, Delivery, Service, and Outcomes: Quality e-Learning in higher education

    Directory of Open Access Journals (Sweden)

    Colla J. MacDonald

    2005-07-01

    Full Text Available This paper addresses the need for quality e-Learning experiences. We used the Demand-Driven Learning Model (MacDonald, Stodel, Farres, Breithaupt, and Gabriel, 2001 to evaluate an online Masters in Education course. Multiple data collection methods were used to understand the experiences of stakeholders in this case study: the learners, design team, and facilitators. We found that all five dimensions of the model (structure, content, delivery, service, and outcomes must work in concert to implement a quality e-Learning course. Key themes include evolving learner needs, the search for connection, becoming an able e-participant, valued interactions, social construction of content, integration of delivery partners, and mindful weighing of benefits and trade-offs. By sharing insights into what is needed to design and deliver an e-Learning experience, our findings add to the growing knowledge of online learning. Using this model to evaluate perceptions of quality by key stakeholders has led to insights and recommendations on the Demand Driven Learning Model itself which may be useful for researchers in this area and strengthen the model. Quality has been defined in terms of the design of the e-Learning experience, the contextualized experience of learners, and evidence of learning outcomes (Carr and Carr, 2000; Jung 2000; Salmon, 2000. Quality and design of e-Learning courses, however, are sometimes compromised in an “ . . . effort to simply get something up and running��� in response to pressing consumer demands (Dick, 1996, p. 59. Educators and researchers have voiced concern over the lack of rigorous evaluation studies of e-Learning programs (e.g., Arbaugh, 2000; Howell, Saba, Lindsay, and Williams, 2004; Lockyer, Patterson, and Harper, 1999; Robinson, 2001. McGorry (2003 adds, “although the number of courses being delivered via the Internet is increasing rapidly, our knowledge of what makes these courses effective learning experiences

  16. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan; Bresnahan, Rich C.

    2015-10-01

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 1016 to 3.8 × 1019 cm-3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1-2 × 1015 cm-3. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the dramatically enhanced growth rates demonstrate

  17. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Bresnahan, Rich C. [Veeco Instruments, St. Paul, Minnesota 55127 (United States)

    2015-10-21

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10{sup 16} to 3.8 × 10{sup 19} cm{sup −3} were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10{sup 15} cm{sup −3}. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be

  18. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan; Bresnahan, Rich C.

    2015-01-01

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N 2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N 2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10 16 to 3.8 × 10 19 cm −3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10 15 cm −3 . The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the

  19. Characterization of low Al content Al{sub x}Ga{sub 1-x}N epitaxial films grown by atmospheric-pressure MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Toure, A.; Halidou, I.; Benzarti, Z.; Bchetnia, A.; El Jani, B. [Faculte des Sciences, Unite de Recherche sur les Hetero-Epitaxies et Applications, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-Chimie des Materiaux, Faculte des Sciences de Monastir, Unite de Service Commun de Recherche ' ' High Resolution X-ray Diffractometer' ' , 5019 Monastir (Tunisia)

    2012-05-15

    Al{sub x}Ga{sub 1-x}N epitaxial films grown on GaN/sapphire by atmospheric-pressure metalorganic vapor phase epitaxy (AP-MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of Al{sub x}Ga{sub 1-x}N was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA + TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high-resolution X-ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half-maximum (FWHM) is observed with Al content. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Effect of Machine Geometry on Higher Harmonics Content in Air-Gap Magnetic Field of Synchronous Reluctance Machine

    Czech Academy of Sciences Publication Activity Database

    Schreier, Luděk; Chomát, Miroslav; Doležel, Ivo

    2001-01-01

    Roč. 176, č. 1500 (2001), s. 259-266 ISSN 0072-4688 R&D Projects: GA ČR GA102/01/0181 Keywords : synchronous reluctance machine * torque pulsation Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  1. Growth, yield and quality responses to gibberellic acid (GA 3 ) of ...

    African Journals Online (AJOL)

    With regard to fruit quality, the application of GA3 at 50 mg/L increased total soluble solids (TSS), total sugar, total biomass and total flavonoids content in the fruits by 112, 97, 45 and 92% compared with the control treatment. In addition, anthocyanin content, total phenol and antioxidant activity was higher in GA3 treated ...

  2. Calprotectin in serum and zonulin in serum and feces are elevated after introduction of a diet with lower carbohydrate content and higher fiber, fat and protein contents.

    Science.gov (United States)

    Ohlsson, Bodil; Roth, Bodil; Larsson, Ewa; Höglund, Peter

    2017-04-01

    Calprotectin is a marker of inflammation and zonulin is a marker of intestinal permeability. Diets with lower carbohydrate content and higher contents of fat, fiber and protein, e.g., Okinawan-based diet, are considered to reduce inflammation and intestinal permeability. The aim of the present study was to evaluate calprotectin and zonulin levels in serum and feces after intervention with an Okinawan-based Nordic diet. Thirty patients (17 women) with type 2 diabetes, mean age 57.5±8.2 years, BMI 29.9±4.1 kg/m 2 , were served the diet during 12 weeks, and were followed for another 16 weeks. Anthropometric and metabolic parameters were registered. Fasting levels of calprotectin and zonulin in serum and feces, and hormones in plasma, were measured by Luminex or ELISA before study start and after 12 and 28 weeks. Calprotectin in serum tended to be increased (P=0.074) after 12 weeks. Zonulin in serum and feces were elevated after 12 weeks (P=0.019 vs. Pvs. P=0.079). Energy percentage of protein in breakfast correlated with serum calprotectin (P=0.008) and tended to correlate with serum zonulin (P=0.059). Calprotectin in serum tended to be elevated, and zonulin in serum and feces are elevated after introduction of an Okinawan-based Nordic diet. These biomarkers correlate with energy percentage of protein.

  3. Comparison of the Content of Web Sites of Higher Education Institutions Providing for Sports Management Education: The Case of Turkish and English Universities

    Science.gov (United States)

    Katirci, Hakan

    2016-01-01

    Considering various themes, this study aims to examine the content of web sites of universities that provide sports management education in higher education level in Turkey and in England. Within this framework, the websites of the higher education institutions that provide sports management education are analyzed by using the content analysis…

  4. Variation of sulfur content in Cu(In,Ga)(S,Se){sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Knipper, Martin; Knecht, Robin; Riedel, Ingo; Parisi, Juergen [Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg (Germany)

    2011-07-01

    Chalcopyrite thin film solar cells made of the compound semiconductor Cu(In,Ga)(S,Se){sub 2} (CIGSSe) have a strong potential for achieving high efficiencies at low production costs. Volume production of CIGSSe-modules has already started to exploit their favorable attributes such as low cost processing and reasonable module efficiency. In this study we studied industrially produced CIGSSe modules obtained from rapid thermal processing (RTP) for sulfurization. In detail, we investigated the effect of sulfur offer and RTP temperature (500 C to 580 C) on the photoelectric characteristics of small-area solar cells cut from the modules. Current-voltage profiling under standard test conditions revealed a strong influence of the particular process recipe on the open circuit voltage whereas significant variations of the maximum quantum efficiency can be observed. X-ray diffraction was employed to relate these effects to the crystallographic structure of the actual CIGSSe films. Lock-in thermographic imaging was employed to link apparent film inhomogeneities and disruptions to the specific process recipe.

  5. Contents

    Directory of Open Access Journals (Sweden)

    Editor IJRED

    2012-11-01

    Full Text Available International Journal of Renewable Energy Development www.ijred.com Volume 1             Number 3            October 2012                ISSN 2252- 4940   CONTENTS OF ARTICLES page Design and Economic Analysis of a Photovoltaic System: A Case Study 65-73 C.O.C. Oko , E.O. Diemuodeke, N.F. Omunakwe, and E. Nnamdi     Development of Formaldehyde Adsorption using Modified Activated Carbon – A Review 75-80 W.D.P Rengga , M. Sudibandriyo and M. Nasikin     Process Optimization for Ethyl Ester Production in Fixed Bed Reactor Using Calcium Oxide Impregnated Palm Shell Activated Carbon (CaO/PSAC 81-86 A. Buasri , B. Ksapabutr, M. Panapoy and N. Chaiyut     Wind Resource Assessment in Abadan Airport in Iran 87-97 Mojtaba Nedaei       The Energy Processing by Power Electronics and its Impact on Power Quality 99-105 J. E. Rocha and B. W. D. C. Sanchez       First Aspect of Conventional Power System Assessment for High Wind Power Plants Penetration 107-113 A. Merzic , M. Music, and M. Rascic   Experimental Study on the Production of Karanja Oil Methyl Ester and Its Effect on Diesel Engine 115-122 N. Shrivastava,  , S.N. Varma and M. Pandey  

  6. Evolution of the structural and magnetic properties of sputtered Tb{sub x}Fe{sub 73}Ga{sub 27-x} (7 at.% ≤ x ≤ 11 at.%) thin films upon the increase of Tb content

    Energy Technology Data Exchange (ETDEWEB)

    Ranchal, R., E-mail: rociran@fis.ucm.es [Dpto. Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, Madrid 28040 (Spain); Fin, S. [Dipartimento di Fisica, Università di Ferrara, Via Saragat 1, 44122 Ferrara (Italy); Bisero, D. [CNISM and Dipartimento di Fisica, Università di Ferrara, Via Saragat 1, 44122 Ferrara (Italy)

    2016-05-15

    Tb{sub x}Fe{sub 73}Ga{sub 27-x} (7 at.% ≤ x ≤ 11 at.%) ternary alloys have been obtained by cosputtering from Tb{sub 33}Fe{sub 67} and Fe{sub 72}Ga{sub 28} targets. In contrast with other Tb–Fe–Ga compounds that consist of just one structural phase, the diffraction pattern of the Tb{sub 7}Fe{sub 73}Ga{sub 20} shows the presence of two different phases related to binary Tb–Fe and Fe–Ga alloys. This microstructure evolves as the Tb content is increased, and for a Tb of 11 at.% X-ray diffractometry only evidences the presence of a phase close to the TbFe{sub 2}. Although none of the studied samples show perpendicular magnetic anisotropy, there is a significant component of the magnetization perpendicular to the sample plane. The increase of the Tb content on the compounds from 7 at.% to 11 at.% enhances this component most probably due to the shift of the microstructure towards one similar to the TbFe{sub 2}. - Highlights: • Tb{sub x}Fe{sub 73}Ga{sub 27-x} (7 at.% ≤ x ≤ 11 at.%) thin films grown by cosputtering. • Evolution of the microstructure upon the increase of Tb. • Out of plane component of the magnetization stable up to 800 Oe.

  7. Lattice vibrations study of Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} quaternary alloys with low (In, As) content grown by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Olvera-Herandez, J [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Olvera-Cervantes, J [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Rojas-Lopez, M [Centro de Investigacion en BiotecnologIa Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72160 (Mexico); Navarro-Contreras, H [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico); Vidal, M A [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico); Anda, F de [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico)

    2006-01-01

    Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} alloys with low (In, As) contents (0.03 GaSb substrates at 540{sup 0}C. High Resolution X-Ray Diffraction results showed profiles associated with a quaternary layer lattice matched to the GaSb substrate as obtained from the (004) reflection. The experimental diffractograms were simulated to estimate alloy composition, thickness and lattice mismatch of the layer. Raman scattering results show phonon frequencies associated to the TO and LO GaAs-like modes as well as GaSb + InAs-like mode, which are characteristic of this quaternary alloy. The As content dependence of the phonon frequency measured in this alloy for low (In, As) contents agree well with the modified Random-Element Isodisplacement (REI) model and also with other available experimental reports. This method can also be used to estimate alloy compositions for this kind of quaternary alloys.

  8. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

    2017-11-01

    In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

  9. Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction

    Science.gov (United States)

    Wang, Yibo; Liu, Yan; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

    2017-06-01

    We investigate GaAsBi/GaAsN system for the design of type-II staggered hetero tunneling field-effect transistor (hetero-TFET). Strain-symmetrized GaAsBi/GaAsN with effective lattice match to GaAs exhibits a type-II band lineup, and the effective bandgap EG,eff at interface is significantly reduced with the incorporation of Bi and N elements. The band-to-band tunneling (BTBT) rate and drive current of GaAsBi/GaAsN hetero-TFETs are boosted due to the utilizing of the type-II staggered tunneling junction with the reduced EG,eff. Numerical simulation shows that the drive current and subthreshold swing (SS) characteristics of GaAsBi/GaAsN hetero-TFETs are remarkably improved by increasing Bi and N compositions. The dilute content GaAs0.85Bi0.15/GaAs0.92N0.08 staggered hetero-nTFET achieves 7.8 and 550 times higher ION compared to InAs and In0.53Ga0.47As homo-TFETs, respectively, at the supply voltage of 0.3 V. GaAsBi/GaAsN heterostructure is a potential candidate for high performance TFET.

  10. An Exploration of the Technological, Pedagogical and Content Knowledge (TPACK Framework: Utilising a Social Networking Site in Irish Higher Education

    Directory of Open Access Journals (Sweden)

    Matt Glowatz

    2015-06-01

    Full Text Available Research into the use of social media for academic purposes is growing. Much of it suggests that social networking sites (SNSs could be used as innovative tools for teaching (Duncan & Baryzck, 2013; Harris, 2012; O’Brien & Glowatz, 2013. This paper argues that research in this field has often neglected to take account of the pedagogy involved in successfully utilising a SNS for educational purposes. Koehler & Mishra (2009 have proposed the technological, pedagogical and content knowledge framework (TPACK to explore the relationship of technology to teaching in order to build the basis for further research. We explore the suitability of the TPACK framework in the context of SNSs for academic engagement, and we review its relevance to the adoption of a SNS as a teaching tool. Our investigation so far suggests that the current TPACK framework overlooks some important elements that are relevant to the adoption of SNSs. This paper outlines some of these overlooked elements and evaluates the use of the TPACK framework in the exploration of SNS usage in higher education to engage students with curriculum. Specifically, we address the key question, ‘Does the TPACK framework provide an insight into the knowledge base required to effectively deliver a module utilizing SNSs?’

  11. Higher fatty acids in Chlorella vulgaris (pyrenoidosa): Content of indivudual acids and use of the algae for the preparation of higher fatty acids - 14C(G)

    International Nuclear Information System (INIS)

    Matucha, M.

    1975-01-01

    A survey of data on the occurrence of higher fatty acids in the lipids of C h l o r e l l a v u l g a r i s (pyrenoidosa) is presented with a view to the biosynthetical preparation of fatty acids- 14 C(G). (author)

  12. Controlled optical properties via chemical composition tuning in molybdenum-incorporated β-Ga2O3 nanocrystalline films

    Science.gov (United States)

    Battu, Anil K.; Manandhar, S.; Shutthanandan, V.; Ramana, C. V.

    2017-09-01

    An approach is presented to design refractory-metal incorporated Ga2O3-based materials with controlled structural and optical properties. The molybdenum (Mo)-content in Ga2O3 was varied from 0 to 11 at% in the sputter-deposited Ga-Mo-O films. Molybdenum was found to significantly affect the structure and optical properties. While low Mo-content (≤4 at%) results in the formation of single-phase (β-Ga2O3), higher Mo-content results in amorphization. Chemically-induced band gap variability (Eg ∼ 1 eV) coupled with structure-modification indicates the electronic-structure changes in Ga-Mo-O. The linear relationship between chemical-composition and optical properties suggests that tailoring the optical-quality and performance of Ga-Mo-O films is possible by tuning the Mo-content.

  13. A MAS NMR and DRIFT study of the Ga species in Ga/H-ZSM5 catalysts and their effect on propane ammoxidation

    Energy Technology Data Exchange (ETDEWEB)

    Pal, P. [Indian Inst. of Petroleum, Dehradun (India). Catalysis Division; Quartararo, J. [Liverpool Univ., Liverpool (United Kingdom). Leverhulme Centre for Innovative Catalysis, Dept. of Chemistry; Abd Hamid, S.B. [Malaya Univ., Postgraduate School, Bangunan (Malaysia); Derouane, E.G. [Algarve Univ., Faro (Portugal). Faculdade de Ciencias e Tecnologia; Vedrine, J.C. [Laboratoire de Physico-Chimie des Surface, Paris (France). Faculdade de Ciencias e Tecnologia; Magusin, P.C.M.M.; Anderson, B.G. [Eindhoven Univ. of Technology, Eindhoven (Netherlands). Schuit Institute of Catalysis

    2005-07-01

    This paper presents the results of a study that sought information about the nature and environment of the gallium (Ga) species in Ga/H-ZSM5 zeolites following H{sub 2}-O{sub 2} redox treatments applied during their activation by use of magic-angle spinning (MAS) {sup 71}Ga, {sup 27}Al, and {sup 29}Si NMR spectroscopy (Ga coordination) complemented by diffuse reflectance FT IR (DRIFT) spectroscopy (Bronsted acidity). This information was then correlated with their catalytic behavior for the ammoxidation of propane. Ga species were observed in several environments: octahedrally coordinated gallium in small Ga{sub 2}O{sub 3} particles at the external surface of the zeolite crystals; octahedrally coordinated gallium in GaO(OH) or related species; and tetrahedrally coordinated gallium in cationic-exchange positions inside the zeolite. Redox (H{sub 2}-O{sub 2}) cycles promote the migration of gallium from the GaO(OH) or Ga{sub 2}O{sub 3} species at the external surface of the zeolite crystals to cationic-exchange sites within the zeolite channels. It was concluded that the redox treatment had a beneficial effect on its catalytic performance for the ammoxidation of propane, which occurs via a bifunctional mechanism. The main product was acetonitrile at high gallium and aluminium contents. It was suggested that higher yields in acrylonitrile could be obtained through Ga-modified zeolites with a higher gallium and lower aluminium content. 22 refs., 1 tab., 6 figs.

  14. “UKRAINIAN SACRED MUSIC” ELECTRONIC STUDU GUIDE: CONTENT, STRUCTURE, USE RECOMMENDATIONS AT A PEDAGOGICAL HIGHER EDUCATION INSTITUTION

    Directory of Open Access Journals (Sweden)

    L. Gavrilova

    2013-03-01

    Full Text Available The article presents the electronic textbook “Ukrainian Sacred Music”, created for the students of pedagogical universities – future teachers of music. We consider the content of the electronic manual, its structure, requirements for the computer, as well as the prospects for its use in the classroom on the history of Ukrainian music and self-study.

  15. Strategic Planning for Institutions of Higher Education: A Content Analysis for the Universidad Tecnica del Estado Planning System.

    Science.gov (United States)

    Karadima, Oscar

    Ten-year development plans of each of the eight campuses of the Universidad de Santiago de Chile, formerly called Universidad Tecnica del Estado, are evaluated, using content analysis. In addition to narrative descriptions, diagrams illustrate the features of each plan, which covers the period 1983-1993. Topics covered by the plans were grouped…

  16. Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

    International Nuclear Information System (INIS)

    Liu Fang; Qin Zhixin

    2016-01-01

    Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al 0.45 Ga 0.55 N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni/Au Schottky, the samples were thermal annealed in the N 2 gas at 400 °C. The reverse leakage current density of Al 0.45 Ga 0.55 N Schottky diode was reduced by 2 orders of magnitude at −10 V. The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Further capacitance–frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies. The capacitance–frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment. (paper)

  17. Submerged cultivation of mycelium with high ergothioneine content from the culinary-medicinal king oyster mushroom Pleurotus eryngii (higher Basidiomycetes) and its composition.

    Science.gov (United States)

    Liang, Chih-Hung; Huang, Ling-Yi; Ho, Kung-Jui; Lin, Shin-Yi; Mau, Jeng-Leun

    2013-01-01

    The culinary-medicinal king oyster mushroom, Pleurotus eryngii, was used to produce mycelia with high ergothioneine content using a one-factor-at-a-time method. The optimal culture conditions for mycelia harvested at day 14 were 25°C, 10% inoculation rate, 2% glucose, 0.5% yeast extract, and no adjustment to the initial pH value. With histidine or amino acid mix added, biomasses and the ergothioneine content of mycelia were higher than those of the control. The ergothioneine content of mycelia harvested at days 16-20 were higher than that of mycelia harvested at day 14. In addition, the ergothioneine content of mycelia from the fermentor (5.84-5.76 mg/g) was much higher than that of mycelia from the shaken flask (4.93-5.04 mg/g). Mycelia with high ergothioneine content showed a profile of proximate composition similar to that of regular mycelia but lost its characteristic umami taste. Overall, mycelia high in ergothioneine could be prepared by optimal culture conditions, the addition of precursors, prolonged harvest, and aeration in the fermentor.

  18. A Comparison of Higher-Order Thinking between the Common Core State Standards and the 2009 New Jersey Content Standards in High School

    Science.gov (United States)

    Sforza, Dario; Tienken, Christopher H.; Kim, Eunyoung

    2016-01-01

    The creators and supporters of the Common Core State Standards claim that the Standards require greater emphasis on higher-order thinking than previous state standards in mathematics and English language arts. We used a qualitative case study design with content analysis methods to test the claim. We compared the levels of thinking required by the…

  19. Digital immigrants teaching digital natives: A phenomenological study of higher education faculty perspectives on technology integration with English core content

    Science.gov (United States)

    Corey, Robert C.

    In the last two decades, technology use has escalated and educators grapple with its advances and integration into the classroom. Issues surrounding what constitutes a literate society, the clarion calls for educational reform emanating from US presidents to parent teacher organizations, and educators' ability to cope with advances in technology in the classroom demand attention. Therefore, the purpose of this qualitative study was to explore and understand the professional and educational experiences of six English faculty members teaching undergraduate courses at Midwest universities. Using the framework of Technological Pedagogical Content Knowledge -- TPACK (Koehler and Mishra 2008), the major focus of the study was to determine how faculty members understood what characterized the nature of teaching with technology in undergraduate classrooms. Results of this study revealed five themes showing how the participants were introduced to technology, how they assimilated it into their pedagogy, and how they integrated it into teaching practice. This study has the potential to impact the nature of illustrating the methods and techniques used by the six participants as they merge technology, pedagogy, and content knowledge and set in motion classroom practices that assist faculty at all levels to develop and teach technology skills necessary for the 21st century and to better prepare students for thinking critically about how to use digital advances.

  20. Research on the integration of teaching content of core courses in Agro-ecological environmental specialties of higher vocational colleges

    Science.gov (United States)

    Chen, Juan; Ma, Guosheng

    2018-02-01

    Curriculum is the means to cultivate higher vocational talents. On the basis of analyzing the core curriculum problems of curriculum reform and Agro-ecological environmental specialties in higher vocational colleges, this paper puts forward the optimization and integration measures of 6 core courses, including “Eco-environment Repair Technology”, “Agro-environmental Management Plan”, “Environmental Engineering Design”, “Environmental Pest Management Technology”, “Agro-chemical Pollution Control Technology”, “Agro-environmental Testing and Analysis”. It integrates the vocational qualification certificate education and professional induction certificate training items, and enhances the adaptability, skills and professionalism of professional core curriculum.

  1. High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hussein, A.SH.; Thahab, S.M.; Hassan, Z.; Chin, C.W.; Abu Hassan, H.; Ng, S.S.

    2009-01-01

    The microstructure and optical properties of Al x Ga 1-x N/GaN/AlN films on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of Al x Ga 1-x N sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the Al x Ga 1-x N has been successfully grown on Si substrate.

  2. Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

    International Nuclear Information System (INIS)

    Chakraborty, Apurba; Biswas, Dhrubes

    2015-01-01

    Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN is to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10 12  eV −1  cm −2 in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10 10  eV −1  cm −2 and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V

  3. Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Hyun-Jun; Song, Pung-Keun

    2014-01-01

    Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

  4. Higher Education Curriculum for Sustainability: Course Contents Analyses of Purchasing and Supply Management Programme of Polytechnics in Ghana

    Science.gov (United States)

    Etse, Daniel; Ingley, Coral

    2016-01-01

    Purpose: The purpose of this study is to determine the degree of attention to and the nature of sustainability issues in the curriculum of the Higher National Diploma (HND) Purchasing and Supply Management programme of Ghana. Design/Methodology/Approach: Documentary research is the approach used to analyse the curriculum document for the programme…

  5. Quality of Higher Education: Organisational or Educational? A Content Analysis of Chinese University Self-Evaluation Reports

    Science.gov (United States)

    Zou, Yihuan; Du, Xiangyun; Rasmussen, Palle

    2012-01-01

    Based on a study of Chinese university self-evaluation reports, this paper argues that higher education institutions are trying to manage the tensions between educational and organisational quality and the increasing and worldwide concerns about quality assurance. After 30 years of dramatic educational reform, China has established a nationwide…

  6. Viscosity of Industrially Important Zn-Al Alloys Part II: Alloys with Higher Contents of Al and Si

    Science.gov (United States)

    Nunes, V. M. B.; Queirós, C. S. G. P.; Lourenço, M. J. V.; Santos, F. J. V.; Nieto de Castro, C. A.

    2018-05-01

    The viscosity of Zn-Al alloys melts, with industrial interest, was measured for temperatures between 693 K and 915 K, with an oscillating cup viscometer, and estimated expanded uncertainties between 3 and 5 %, depending on the alloy. The influence of minor components, such as Si, Mg and Ce + La, on the viscosity of the alloys is discussed. An increase in the amount of Mg triggers complex melt/solidification processes while the addition of Ce and La renders alloys viscosity almost temperature independent. Furthermore, increases in Al and Si contents decrease melts viscosity and lead to an Arrhenius type behavior. This paper complements a previous study describing the viscosity of Zn-Al alloys with quasi-eutectic compositions.

  7. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

    Directory of Open Access Journals (Sweden)

    K. Collar

    2017-07-01

    Full Text Available We investigate the change of the valence band energy of GaAs1-xBix (0GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that ∼75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.

  8. Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

    Science.gov (United States)

    Moseley, Michael; Lowder, Jonathan; Billingsley, Daniel; Doolittle, W. Alan

    2010-11-01

    The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.

  9. Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

    International Nuclear Information System (INIS)

    Moseley, Michael; Lowder, Jonathan; Billingsley, Daniel; Doolittle, W. Alan

    2010-01-01

    The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.

  10. Content and Target Aspects of the Relativism Concept of National Stereotypes in the Higher School Foreign Language Teaching

    Directory of Open Access Journals (Sweden)

    N. V. Sorokina

    2013-01-01

    Full Text Available The paper deals with the innovative educational concept of teaching the foreign languages to the senior university students. The research methodology is based on M. Bennett’s model of intercultural sensitivitydevelopment necessary for the gradual transformation of ethnocentrism into ethno-relativism. The development of students’ relativistic perception of national stereotypes is perceived by the author as an important factor of both the natural cognitive mechanism and intercultural communication. The author argues that relativistic perception of national stereotypes can be achieved by fostering the intercultural world outlook, and therefore recommends incorporating a relativistic world view component in educational content structure along with the traditional components of knowledge, skills, attitudes, motives, creative activity expertise, etc.The paper emphasizes three consequent educational modules of ethnodifferentiation, ethno-integration and ethno-relativity in the proposed methodological system. The gradual fulfillment of educational goals, relatedto the above modules, can ensure the transformation of students’ perception of national stereotypes at the cognitive, affective, and behavioral levels. The proposed educational concept, approbated in the GermanLanguage Department of Zabaykalsky State University in 2010 – 2013, along with the research data prove the effectiveness of the given method, and demonstrate a substantial development of students’ intercultural competence and a decline in the ethnocentrism level.

  11. Translocation of labelled assimilates, ion uptake and nucleic acids contents in zea mays plants as influenced by application of the herbicide dual and the bioregulaators GA3 and kinetin

    International Nuclear Information System (INIS)

    Hassanein, R.AA.; Khodary, S.E.A.; Abdel-Aziz, S.M.

    2001-01-01

    Maize seedlings, grown hydroponic for one month, were undertaken o investigate the effect of dual (metolachlor), bio regulators (GA 3 and kinetin) and their interaction with dual on translocation rate of assimilates, nucleic acids content. ion uptake and the activities of protease and nitrate reductase enzymes. Dual at all concentrations decreased the rate of assimilates translocation and nucleic acids levels. Also reduction in the ability of the treated plants to absorb ions from the growth medium as well as the activities of nitrate reductase and protease enzymes were retarded upon dual application. The results also revealed that treatment with either GA 3 or kinetin in combination with dual, reversed the adverse action of the herbicide on zea mays plants

  12. Effect of lead on nucleic acid and protein contents of rice (Oryza sativa L. ) seedlings and its interaction with IAA and GA/sub 3/ in different plant systems

    Energy Technology Data Exchange (ETDEWEB)

    Maitra, P.; Mukherh, S.

    1979-09-01

    Activity of lead acetate, (CH/sub 3/COO)/sub 2/Pb, 3 H/sub 2/O, was studied in germinating rice seedlings with respect to RNA, DNA and alkali soluble protein contents. RNA, DNA and protein contents greatly reduced both in embryo and endosperm with increasing concentrations of lead and with concomitant increase in amino acid content in embryo. When IAA was supplied in combination with lead acetate, variable amounts of relief of elongation inhibition of wheat coleoptile sections were noticed. With GA/sub 3/, however, lead-induced inhibition of either lettuce (Lactuca sativa L.) hypocotyl elongation or ..cap alpha..-amylase production in rice half seeds was largely overcome.

  13. Efficient photodecomposition of herbicide imazapyr over mesoporous Ga2O3-TiO2 nanocomposites.

    Science.gov (United States)

    Ismail, Adel A; Abdelfattah, Ibrahim; Faisal, M; Helal, Ahmed

    2018-01-15

    The unabated release of herbicide imazapyr into the soil and groundwater led to crop destruction and several pollution-related concerns. In this contribution, heterogeneous photocatalytic technique was employed utilizing mesoporous Ga 2 O 3 -TiO 2 nanocomposites for degrading imazapyr herbicide as a model pollutant molecule. Mesoporous Ga 2 O 3 -TiO 2 nanocomposites with varied Ga 2 O 3 contents (0-5wt%) were synthesized through sol-gel process. XRD and Raman spectra exhibited extremely crystalline anatase TiO 2 phase at low Ga 2 O 3 content which gradually reduced with the increase of Ga 2 O 3 content. TEM images display uniform TiO 2 particles (10±2nm) with mesoporous structure. The mesoporous TiO 2 exhibits large surface areas of 167m 2 g -1 , diminished to 108m 2 g -1 upon 5% Ga 2 O 3 incorporation, with tunable mesopore diameter in the range of 3-9nm. The photocatalytic efficiency of synthesized Ga 2 O 3 -TiO 2 nanocomposites was assessed by degrading imazapyr herbicide and comparing with commercial photocatalyst UV-100 and mesoporous Ga 2 O 3 under UV illumination. 0.1% Ga 2 O 3 -TiO 2 nanocomposite is considered the optimum photocatalyst, which degrades 98% of imazapyr herbicide within 180min. Also, the photodegradation rate of imazapyr using 0.1% Ga 2 O 3 -TiO 2 nanocomposite is nearly 10 and 3-fold higher than that of mesoporous Ga 2 O 3 and UV-100, respectively. The high photonic efficiency and long-term stability of the mesoporous Ga 2 O 3 -TiO 2 nanocomposites are ascribed to its stronger oxidative capability in comparison with either mesoporous TiO 2 , Ga 2 O 3 or commercial UV-100. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. EDUCast@fccn: An example of European cooperation to implement the production of AV content in Higher Education Institutions in Portugal

    OpenAIRE

    Samuel Martins; Hugo Ribeiro; Rui Ribeiro; Nelson Dias

    2012-01-01

    The specific logistics of each Higher Education Institution (HEI) in Portugal and the specific teaching of each academic community are some of the major challenges faced by technical staff, administrative staff and educational support staff of these institutions when trying to find an appropriate solution for the provision of audiovisual content. In this sense, it was developed since 2010 an innovative partnership initiated by the Portuguese Foundation for National Scientific Computing (FCCN)...

  15. Dielectric function and electro-optical properties of (Al,Ga)N/GaN-heterostructures; Dielektrische Funktion und elektrooptische Eigenschaften von (Al,Ga)N/GaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Buchheim, Carsten

    2010-04-23

    In this work extensive investigations on nitride semiconductors by optical spectroscopy are presented. The ordinary and the extraordinary component of the dielectric function of GaN in the spectral range from 1.2 to 9.8 eV is shown for the first time. It is demonstrated, that the transparent spectral range is clearly influenced by higher energetic critical points of the band structure. The optical selection rules for GaN and AlN are verified considering the actual strain state. The change of the valence band ordering of AlN in comparison to GaN is proven and the crystal field splitting is estimated for AlN. The ordinary dielectric function of AlGaN is determined for different Al contents. The data are used for developing an analytical model, which includes excitonic effects and bowings. It allows the calculation of the dielectric function for arbitrary alloy compositions. (GaN/)AlGaN/GaN heterostructures are investigated by spectroscopic ellipsometry as well as by photoreflectance and electroreflectance. The optical data yields the electric field strengths of the individual layers to determine the density of the two-dimensional carrier gases at the heterointerfaces with high accuracy. The surface potential is calculated from the combination of experiments and Schroedinger-Poisson calculations. Its dependency on the Al content is quantified. For the special case of thick cap layers the coexistence of electron and hole gases in one sample is experimentally proven for the first time. Several interband transitions between quantized states in AlN/GaN superlattices are observed by electroreflectance. The comparison to quantum mechanical calculations demonstrates the influence of strain and electrical fields (quantum confined Stark effect). For both the ratio of the thicknesses of quantum wells and barriers is crucial. From the dielectric function of the superlattices it becomes obvious, that quantum size effects are not only important for the vicinity of the bandgap, but

  16. Raman scattering analysis of Cu-poor Cu(In,Ga)Se{sub 2} cells fabricated on polyimide substrates: Effect of Na content on microstructure and phase structure

    Energy Technology Data Exchange (ETDEWEB)

    Izquierdo-Roca, V. [IN2UB/Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028, Barcelona (Spain); Caballero, R. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109, Berlin (Germany); Fontane, X. [IREC, Catalonia Institute for Energy Research, C. Josep Pla 2 B2, 08019, Barcelona (Spain); Kaufmann, C.A. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109, Berlin (Germany); Alvarez-Garcia, J. [Centre de Recerca i Investigacio de Catalunya (CRIC), Trav. de Gracia 108, 08012 Barcelona (Spain); Calvo-Barrio, L. [Lab. Analisis de Superficies, SCT, Universitat de Barcelona, Lluis Sole i Sabaris 1-3, 08028 Barcelona (Spain); Saucedo, E. [IREC, Catalonia Institute for Energy Research, C. Josep Pla 2 B2, 08019, Barcelona (Spain); Perez-Rodriguez, A., E-mail: aperezr@irec.cat [IN2UB/Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028, Barcelona (Spain); IREC, Catalonia Institute for Energy Research, C. Josep Pla 2 B2, 08019, Barcelona (Spain); Morante, J.R. [INUB/Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028, Barcelona (Spain); IREC, Catalonia Institute for Energy Research, C. Josep Pla 2 B2, 08019, Barcelona (Spain); Schock, H.W. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109, Berlin (Germany)

    2011-08-31

    This work reports the Raman scattering surface and in-depth resolved analysis of Cu-poor Cu(In,Ga)Se{sub 2} (CIGS) grown on polyimide substrates. In order to study the effect of Na on the formation and microstructure of the CIGS and the corresponding Cu-poor ordered vacancy compound (OVC) phases, a NaF precursor layer with different thicknesses was deposited on the Mo-coated substrates before growing of the samples. The Raman spectroscopy data are correlated with the analysis of the samples by Auger electron spectroscopy and scanning electron microscopy. These data corroborate the significant role of Na on the inhibition of Ga-In interdiffusion and on the formation of the MoSe{sub 2} interfacial phase at the back region of the layers. Presence of Na also leads to an enhancement in the formation of the chalcopyrite CIGS phase and a decrease in the occurrence of the dominant OVC phase at the surface region. This study confirms the strong dependence of the microstructure and phase distribution in CIGS absorber layers on the Na available during their growth.

  17. Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

    International Nuclear Information System (INIS)

    Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo

    2013-01-01

    Highlights: •2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure. •The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness. •The conditions for the disappearance of 2DHG are discussed. •Increasing buffer Al content provides better electron confinement. •Dislocation scattering is reduced in the DH-structure. -- Abstract: This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG

  18. Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Timm, R.

    2007-12-14

    In this work, cross-sectional scanning tunneling microscopy and spectroscopy are used for the first time to study the shape, size, strain, chemical composition, and electronic properties of capped GaSb/GaAs QDs at the atomic scale. By evaluating such structural results on a variety of nanostructures built using different epitaxy methods and growth conditions, details on the underlying QD formation processes can be revealed. A cross-over from flat quantum wells (QWs) to optically active QDs can be observed in samples grown by metalorganic chemical vapor deposition (MOCVD) with increasing amount of GaSb, including self-assembled Sb accumulations within a still two-dimensional layer and tiny three-dimensional GaSb islands probably acting as precursor structures. The QWs consist of significantly intermixed material with stoichiometries of maximally 50% GaSb, additionally exhibiting small gaps filled with GaAs. A higher GaSb content up to nearly pure material is found in the QDs, being characterized by small sizes of up to 8 nm baselength and about 2 nm height. In spite of the intermixing, all nanostructures have rather abrupt interfaces, and no significant Sb segregation in growth direction is observed. This changes completely when molecular beam epitaxy (MBE) is used as growth method, in which case individual Sb atoms are found to be distributed over several nm above the nanostructures. Massive group-V atomic exchange processes are causing this strong inter-mixing and Sb segregation during GaAs overgrowth. In combination with the large strain inherent to GaSb/GaAs QDs, this segregation upon overgrowth is assumed to be the reason for a unique structural phenomenon: All MBE-grown QDs, independent of the amount of deposited GaSb, exhibit a ring structure, consisting of a ring body of high GaSb content and a more or less extended central gap filled with GaAs. These rings have formed in a self-assembled way even when the initial GaSb layer was overgrown considerably fast

  19. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

    Directory of Open Access Journals (Sweden)

    Weihuang Yang

    2013-05-01

    Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

  20. An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

    International Nuclear Information System (INIS)

    Tang Yin; Cai Qing; Chen Dun-Jun; Lu Hai; Zhang Rong; Zheng You-Dou; Yang Lian-Hong; Dong Ke-Xiu

    2017-01-01

    To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al 0.3 Ga 0.7 N/Al 0.45 Ga 0.55 N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al 0.3 Ga 0.7 N which has about a six times higher hole ionization coefficient than the high-Al-content Al 0.45 Ga 0.55 N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device. (paper)

  1. Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

    International Nuclear Information System (INIS)

    Dinh, Duc V.; Zubialevich, V. Z.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Alam, S. N.; Parbrook, P. J.; Caliebe, M.; Scholtz, F.

    2014-01-01

    InGaN layers were grown simultaneously on (112 ¯ 2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750 °C), the indium content ( ¯ 2) and (0001) InGaN layers was similar. However, for temperatures less than 750 °C, the indium content of the (112 ¯ 2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112 ¯ 2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112 ¯ 2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112 ¯ 2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

  2. Preadipocyte Factor-1 Levels Are Higher in Women with Hypothalamic Amenorrhea and Are Associated with Bone Mineral Content and Bone Mineral Density through a Mechanism Independent of Leptin

    Science.gov (United States)

    Aronis, Konstantinos N.; Kilim, Holly; Chamberland, John P.; Breggia, Anne; Rosen, Clifford

    2011-01-01

    Context: Preadipocyte factor 1 (pref-1) is increased in anorexia nervosa and is associated negatively with bone mineral density (BMD). No previous studies exist on pref-1 in women with exercise-induced hypothalamic amenorrhea (HA), which similar to anorexia nervosa, is an energy-deficiency state associated with hypoleptinemia. Objective: Our objective was to evaluate whether pref-1 levels are also elevated and associated with low BMD and to assess whether leptin regulates pref-1 levels in women with HA. Design: Study 1 was a double-blinded, placebo-controlled randomized clinical trial of metreleptin administration in women with HA. Study 2 was an open-label study of metreleptin administration in low physiological, supraphysiological, and pharmacological doses in healthy women volunteers. Setting and Patients: At Beth Israel Deaconess Medical Center, 20 women with HA and leptin levels higher than 5 ng/ml and nine healthy control women participated in study 1, and five healthy women participated in study 2. Intervention: For study 1, 20 HA subjects were randomized to receive either 0.08 mg/kg metreleptin (n = 11) or placebo (n = 9). For study 2, five healthy subjects received 0.01, 0.1, and 0.3 mg/kg metreleptin in both fed and fasting conditions for 1 and 3 d, respectively. Main Outcome Measures: Circulating pref-1 and leptin levels were measured. Results: Pref-1 was significantly higher in HA subjects vs. controls (P = 0.035) and negatively associated with BMD (ρ = −0.38; P < 0.01) and bone mineral content (ρ = −0.32; P < 0.05). Metreleptin administration did not alter pref-1 levels in any study reported herein. Conclusions: Pref-1 is higher in HA subjects than controls. Metreleptin administration at low physiological, supraphysiological, and pharmacological doses does not affect pref-1 levels, suggesting that hypoleptinemia is not responsible for higher pref-1 levels and that leptin does not regulate pref-1. PMID:21795455

  3. Preadipocyte factor-1 levels are higher in women with hypothalamic amenorrhea and are associated with bone mineral content and bone mineral density through a mechanism independent of leptin.

    Science.gov (United States)

    Aronis, Konstantinos N; Kilim, Holly; Chamberland, John P; Breggia, Anne; Rosen, Clifford; Mantzoros, Christos S

    2011-10-01

    Preadipocyte factor 1 (pref-1) is increased in anorexia nervosa and is associated negatively with bone mineral density (BMD). No previous studies exist on pref-1 in women with exercise-induced hypothalamic amenorrhea (HA), which similar to anorexia nervosa, is an energy-deficiency state associated with hypoleptinemia. Our objective was to evaluate whether pref-1 levels are also elevated and associated with low BMD and to assess whether leptin regulates pref-1 levels in women with HA. Study 1 was a double-blinded, placebo-controlled randomized clinical trial of metreleptin administration in women with HA. Study 2 was an open-label study of metreleptin administration in low physiological, supraphysiological, and pharmacological doses in healthy women volunteers. At Beth Israel Deaconess Medical Center, 20 women with HA and leptin levels higher than 5 ng/ml and nine healthy control women participated in study 1, and five healthy women participated in study 2. For study 1, 20 HA subjects were randomized to receive either 0.08 mg/kg metreleptin (n = 11) or placebo (n = 9). For study 2, five healthy subjects received 0.01, 0.1, and 0.3 mg/kg metreleptin in both fed and fasting conditions for 1 and 3 d, respectively. Circulating pref-1 and leptin levels were measured. Pref-1 was significantly higher in HA subjects vs. controls (P = 0.035) and negatively associated with BMD (ρ = -0.38; P < 0.01) and bone mineral content (ρ = -0.32; P < 0.05). Metreleptin administration did not alter pref-1 levels in any study reported herein. Pref-1 is higher in HA subjects than controls. Metreleptin administration at low physiological, supraphysiological, and pharmacological doses does not affect pref-1 levels, suggesting that hypoleptinemia is not responsible for higher pref-1 levels and that leptin does not regulate pref-1.

  4. Effect of thermal oxidation treatment on pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lei; Bu, Yuyu [Institute of Science and Technology, Tokushima University, Tokushima 770-8506 (Japan); Li, Liuan, E-mail: liliuan@mail.sysu.edu.cn [School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275 (China); Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Science and Technology, Tokushima University, Tokushima 770-8506 (Japan)

    2017-07-31

    Highlights: • AlGaN/GaN ISFETs were fabricated and evaluated with thermal oxidation treatment. • Sensitivity was improved to 57.7 mV/pH after 700 °C treatment. • Sensitivity became poor after 800 °C treatment. • The pure α-Al{sub 2}O{sub 3} crystal phase generated on the surface of the 700 °C treatment sample. • Ga{sub 2}O{sub 3} phase content in the metal oxide layer increased after 800 °C treatment. - Abstract: In this article, AlGaN/GaN heterostructure ion-sensitive field-effect transistors (ISFETs) were prepared and evaluated by thermal oxidation treatment on the AlGaN surface. The ISFETs were fabricated on the AlGaN/GaN heterostructure and then thermally oxidized with dry oxygen in 600, 700, and 800 °C, respectively. It indicates that the performance of the AlGaN/GaN heterostructure ISFETs, such as noise and sensitivity, has been improved owing to the thermal oxidation treatment process at different temperatures. The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results indicate that after thermal oxidation treatment at different temperatures, hydroxide who possesses high surface state density will transfer to oxide owing to the higher chemical stability of the latter. Moreover, a crystalline α-Al{sub 2}O{sub 3} phase generated at 700 °C can not only provide a relatively smooth surface, but also improve the sensitivity to 57.7 mV/pH for the AlGaN/GaN heterostructure ISFETs, which is very close to the Nernstian limit.

  5. Higher content of C18:1 trans fatty acids in early human milk fat of Roma breast-feeding women

    Czech Academy of Sciences Publication Activity Database

    Marhol, Petr; Dlouhý, P.; Rambousková, J.; Pokorný, R.; Wiererová, O.; Hrnčířová, D.; Procházka, B.; Anděl, M.

    2007-01-01

    Roč. 51, č. 5 (2007), s. 461-467 ISSN 0250-6807 Grant - others:GA Mzd(CZ) NJ6120 Institutional research plan: CEZ:AV0Z50200510 Source of funding: V - iné verejné zdroje Keywords : trans fatty acids * roma * human milk Subject RIV: EE - Microbiology, Virology Impact factor: 1.831, year: 2007

  6. Metallurgical processing and properties of multifilamentary V3Ga composite wires

    International Nuclear Information System (INIS)

    Howe, D.G.; Weinman, L.S.

    1976-01-01

    Multifilamentary composite wires of V - 6.1 at. percent Ga filaments in a Cu-17.5 at. percent Ga matrix were fabricated. High purity V and Ga were arc melted and cast to form an alloy rod. High purity Cu and Ga were induction melted and also cast as an alloy rod. The alloy rods were reduced in diameter by swaging. The larger diameter Cu - Ga matrix rod was drilled with 19 holes which terminated within the matrix-rod. The holes served as receptacles for 19 V-Ga rods which were inserted into the matrix. The composite assembly was evacuated under high vacuum and sealed by an electron beam weld. The composite was then reduced in diameter through swaging and wire drawing to 0.032-in. dia wire. V 3 Ga layers at the filament/matrix interface were formed through an isothermal solid-state reaction. Growth rates for V 3 Ga are strongly influenced by alloy composition and formation temperature, with more rapid growth occurring in composite wires with higher Ga contents. Improved critical current densities (J/sub c/) resulted from lower formation temperatures, J/sub c/ values of over 1 x 10 6 A/cm 2 in a transverse magnetic field of 100 kG were obtained in the multifilamentary composite wire. 9 figs

  7. Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zhengyuan; Shen, Xiyang; Xiong, Huan; Li, Qingfei; Kang, Junyong; Fang, Zhilai [Xiamen University, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen (China); Lin, Feng; Yang, Bilan; Lin, Shilin [San' an Optoelectronics Co., Ltd, Xiamen (China); Shen, Wenzhong [Shanghai Jiao Tong University, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai (China); Zhang, Tong-Yi [Shanghai University, Shanghai University Materials Genome Institute and Shanghai Materials Genome Institute, Shanghai (China)

    2016-02-15

    Interface modification of high indium content InGaN/GaN quantum wells was carried out by Mg pretreatment of the GaN barrier surface. The indium in the Mg-pretreated InGaN layer was homogeneously distributed, making the interfaces abrupt. The improved interface quality greatly enhanced light emission capacity. The cathodoluminescence intensity of the Mg-pretreated InGaN/GaN quantum wells was correspondingly much stronger than those of the InGaN/GaN quantum wells without Mg pretreatment. (orig.)

  8. Percoll gradient-centrifuged capacitated mouse sperm have increased fertilizing ability and higher contents of sulfogalactosylglycerolipid and docosahexaenoic acid-containing phosphatidylcholine compared to washed capacitated mouse sperm.

    Science.gov (United States)

    Furimsky, Anna; Vuong, Ngoc; Xu, Hongbin; Kumarathasan, Premkumari; Xu, Min; Weerachatyanukul, Wattana; Bou Khalil, Maroun; Kates, Morris; Tanphaichitr, Nongnuj

    2005-03-01

    Although Percoll gradient centrifugation has been used routinely to prepare motile human sperm, its use in preparing motile mouse sperm has been limited. Here, we showed that Percoll gradient-centrifuged (PGC) capacitated mouse sperm had markedly higher fertilizing ability (sperm-zona pellucida [ZP] binding and in vitro fertilization) than washed capacitated mouse sperm. We also showed that the lipid profiles of PGC capacitated sperm and washed capacitated sperm differed significantly. The PGC sperm had much lower contents of cholesterol and phospholipids. This resulted in relative enrichment of male germ cell-specific sulfogalactosylglycerolipid (SGG), a ZP-binding ligand, in PGC capacitated sperm, and this would explain, in part, their increased ZP-binding ability compared with that of washed capacitated sperm. Analyses of phospholipid fatty acyl chains revealed that PGC capacitated sperm were enriched in phosphatidylcholine (PC) molecular species containing highly unsaturated fatty acids (HUFAs), with docosahexaenoic acid (DHA; C22: 6n-3) being the predominant HUFA (42% of total hydrocarbon chains of PC). In contrast, the level of PC-HUFAs comprising arachidonic acid (20:4n-6), docosapentaenoic acid (C22:5n-6), and DHA in washed capacitated sperm was only 27%. Having the highest unsaturation degree among all HUFAs in PC, DHA would enhance membrane fluidity to the uppermost. Therefore, membranes of PGC capacitated sperm would undergo fertilization-related fusion events at higher rates than washed capacitated sperm. These results suggested that PGC mouse sperm should be used in fertilization experiments and that SGG and DHA should be considered to be important biomarkers for sperm fertilizing ability.

  9. Muchinako, GA

    African Journals Online (AJOL)

    Muchinako, GA. Vol 28, No 2 (2013) - Articles Children living and/or working on the streets in Harare: Issues and challenges. Abstract. ISSN: 1012-1080. AJOL African Journals Online. HOW TO USE AJOL... for Researchers · for Librarians · for Authors · FAQ's · More about AJOL · AJOL's Partners · Terms and Conditions of ...

  10. Influence of strain on the growth of thick InGaN layers

    International Nuclear Information System (INIS)

    Stellmach, J.; Leyer, M.; Pristovsek, M.; Kneissl, M.

    2008-01-01

    The growth of high quality InGaN alloys is critical for a number of various optoelectronic device applications like LEDs and laser diodes. Nevertheless, the exact growth mechanisms of InGaN with high indium content is still not fully understood. In the present study the growth of thick InGaN layers was systematically investigated. InGaN films with thicknesses between ∝35 nm and ∝200 nm were grown on GaN templates with metal-organic vapour phase epitaxy (MOVPE). The group III partial pressures of 1.1 Pa for TMGa, 0.45 Pa for TMIn and the V/III-ratio of 1600 were kept constant. The growth temperature was varied between 750 C and 800 C. The growth of InGaN layer was characterized by in-situ spectroscopic ellipsometry (SE). Up to temperatures of 790 C structural analysis by XRD showed two strained layers with different indium content. The formation of the layer structure was investigated by varying the growth times at 770 C. In the first 500 s (35 nm) a rough (rms=9 nm) and pseudomorphically strained InGaN layer with low indium content (4%) is formed. Between 500 s and 1000 s this strained layer becomes smoother (rms=3.4 nm). For thicknesses beyond the In content increases (8% at 84 nm) and reaches 11% at 200 nm. We propose that the transition from a first layer with a low indium content to a second layer with an higher indium content is due to a gradual release of strain

  11. Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

    2015-02-15

    Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

  12. Implementing CLIL in Higher Education in Thailand: The Extent to Which CLIL Improves Agricultural Students' Writing Ability, Agricultural Content, and Cultural Knowledge

    Science.gov (United States)

    Chansri, Charinee; Wasanasomsithi, Punchalee

    2016-01-01

    The present study aimed to investigate the extent to which a CLIL (Content and Language Integrated Learning) course at university level in Thailand improves undergraduate Agricultural students' writing ability, agricultural content, and cultural knowledge. The study sample consisted of 27 students majoring in Agriculture at a public university in…

  13. Content Interactivity: The Effect of Higher Levels of Interactivity on Learner Performance Outcomes and Satisfaction in Web-Based Military Training

    Science.gov (United States)

    Kenyon, Peggy L.

    2012-01-01

    The effect of content interactivity on performance outcomes and satisfaction has been studied by researchers who compared the results of Web-based and computer-based learning to classroom learning. Few scholars have compared the effects of the same content produced at different levels (low and high) of interactivity and the resulting effects. The…

  14. Nanomaterial disordering in AlGaN/GaN UV LED structures

    International Nuclear Information System (INIS)

    Shabunina, E I; Levinshtein, M E; Kulagina, M M; Petrov, V N; Ratnikov, V V; Smirnova, I N; Troshkov, S I; Shmidt, N M; Kurin, S Yu; Makarov, Yu N; Chernyakov, A E; Usikov, A S; Helava, H

    2015-01-01

    Multifractal analysis was applied to characterize quantitatively nanostructural disordering in HVPE-grown AlGaN/GaN UV LED structures. A higher level of leakage currents shunting the active region of LEDs by an extended defect system is correlated with higher values of multifractal parameters (MFs). As a result, the concentration of injected carriers participating in radiative recombination in the active region is reduced. MFs and the conductivity of quasi-ohmic shunts localized in an extended defect system are higher in AlGaN/GaN structures than in InGaN/GaN structures. It is one of the reasons behind the low external quantum efficiency of AlGaN/GaN UV LEDs. (paper)

  15. Origins of efficient green light emission in phase-separated InGaN quantum wells

    International Nuclear Information System (INIS)

    Lai, Y-L; Liu, C-P; Lin, Y-H; Hsueh, T-H; Lin, R-M; Lyu, D-Y; Peng, Z-X; Lin, T-Y

    2006-01-01

    Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516 nm) and the InGaN matrix (450 nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511 meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341 meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission

  16. Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

    International Nuclear Information System (INIS)

    Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

    2014-01-01

    Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. Serum content of oleic acid is associated with higher platelet-, endothelial- and leukocyte-derived circulating microparticles in Norwegian normolipidemic elderly patients after an acute myocardial infarction

    DEFF Research Database (Denmark)

    Chiva-Blanch, G; Bratseth, V; Laake, K

    2016-01-01

    (EPA) and docosahexaenoic acid (DHA), from three different adipose tissue compartments [epicardial (EAT), pericardial (PAT) and subcutaneous (SAT)]. Furthermore, we studied the correlation between the content of EPA and DHA in these compartments and in atrial tissue (AT). METHODS We obtained AT from......OBJECTIVES The content in adipose tissue of marine n-3 polyunsaturated fatty acids (PUFAs) is a marker of long-term fish consumption and data suggest an antiarrhythmic effect of n-3 PUFAs. We investigated the correlation between adipose tissue content of the major n-3 PUFAs, eicosapentaenoic acid...... auricles, EAT above the right ventricle, PAT, and SAT below the sternum from 50 patients undergoing cardiac surgery. Samples were frozen at -80°C and the content of n-3 PUFAs determined by gas chromatography with results given in relative weight%. RESULTS EPA and DHA were significantly correlated in EAT...

  18. Fruit development, pigmentation and biochemical properties of wax apple as affected by localized Application of GA3 under field conditions

    Directory of Open Access Journals (Sweden)

    Mohammad Moneruzzaman Khandaker

    2013-02-01

    Full Text Available This study investigated the effects of gibberellin (GA3 on the fruit development, pigmentation and biochemical properties of wax apple. The wax apple trees were rubbing treated with 0, 20, 50 and 100 mgGA3/l under field conditions. The localized application (rubbing of 50 mg GA3/l significantly increased the fruit set, fruit length and diameter, color development, weight and yieldcompared to the control. In addition, GA3 treatments significantly reduced the fruit drop. With regard to the fruit quality, 50 mg/l GA3 treatment increased the juice content, K+, TSS, total sugar and sugar acid ratio of wax apple fruits. In addition, higher vitamin C, phenol, flavonoid, anthocyanin, carotene content, PAL and antioxidant activities were recorded in the treated fruits. There was a positive correlation between the peel colour and TSS content and between the PAL activity and anthocyanin formation in the GA3-treated fruit. It was concluded that rubbing with 50 mg/L GA3 at inflorescence developing point of phloem once a week from the tiny inflorescence bud until the flower opening resulted in better yield and quality of wax apple fruits and could be an effective technique to safe the environment from excessive spray.

  19. Growth initiation processes for GaAs and AlGaAs in CBE

    International Nuclear Information System (INIS)

    Hill, D.

    2002-01-01

    The aim of this work was to investigate the nature of the transient period found in reflectance anisotropy (RA) measurements of high III:V BEP ratio growth of gallium arsenide (GaAs) and aluminium gallium arsenide (AIGaAs) by chemical beam epitaxy (CBE). Growth at substrate temperatures between 510-610 deg C with arsine (AsH 3 ) thermally cracked to As 2 , triethylgallium (TEGa), trimethylgallium (TMGa), trimethylaminealane (TMAA) and diethylmethylaminealane (DEMAA) at high III:V BEP ratios reveals that the transition from 'pre-growth' to 'in-growth' reconstructions is not as straightforward as that for lower III:V BEP ratio growth. Instead of the reconstruction changing directly to the usual 2x4 'in-growth' reconstruction over 1-2 seconds it passes through several other transient reconstructions over a period of up to and greater than 60s, firstly the Ga rich 4x2 then several other 2x4 As-stable reconstructions. It has been shown that at the III:V BEP ratios and substrate temperatures used in this work growth is taking place in a transitional area of the phase diagram for 'in-growth' reconstructions. At higher III:V BEP ratio growth the transition is believed to be direct, from the 'pre-growth' reconstruction to a 4x2 Ga-rich 'in-growth' reconstruction. The surfaces grown with any of the precursors are initially saturated with Ga and then as the As coverage gradually increases the reconstructions change until enough As is present on the surface for usual 2x4 'in-growth' reconstruction to stabilise. However unlike for TMGa, GaAs growth with TEGa proceeds by a non-self limiting growth mode and TEGa rapidly dissociates. The result of this is that TEGa decomposes on top of other TEGa molecules, or their fragments and due to the high flux rate this leads to a 'stacking-up' of Ga on the surface. The presence of excess Ga provides a rapid increase of surface reflectance and then its subsequent decay as the excess Ga is incorporated by the increasing As content of the

  20. Data Science Programs in U.S. Higher Education: An Exploratory Content Analysis of Program Description, Curriculum Structure, and Course Focus

    Science.gov (United States)

    Tang, Rong; Sae-Lim, Watinee

    2016-01-01

    In this study, an exploratory content analysis of 30 randomly selected Data Science (DS) programs from eight disciplines revealed significant gaps in current DS education in the United States. The analysis centers on linguistic patterns of program descriptions, curriculum requirements, and DS course focus as pertaining to key skills and domain…

  1. Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

    2007-01-01

    Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

  2. Meningiomas: A Comparative Study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for Molecular Imaging in Mice

    Science.gov (United States)

    Soto-Montenegro, María Luisa; Peña-Zalbidea, Santiago; Mateos-Pérez, Jose María; Oteo, Marta; Romero, Eduardo; Morcillo, Miguel Ángel; Desco, Manuel

    2014-01-01

    Purpose The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three 68Ga-DOTA-labeled somatostatin analogues (68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE) using PET/CT in a murine model with subcutaneous meningioma xenografts. Methods The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN). 68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L) and tumor-to-muscle (T/M) SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt) was determined. Results Hepatic SUVmax and Vt were significantly higher with 68Ga-DOTANOC than with 68Ga-DOTATOC and 68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between 68Ga-DOTATATE and 68Ga-DOTATOC, both of which had a higher fraction than 68Ga-DOTANOC. The T/M SUV ratio was significantly higher with 68Ga-DOTATATE than with 68Ga-DOTATOC and 68Ga-DOTANOC. The Vt for tumor was higher with 68Ga-DOTATATE than with 68Ga-DOTANOC and relatively similar to that of 68Ga-DOTATOC. Conclusions This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with 68Ga-DOTATATE and 68Ga-DOTATOC, uptake was higher with 68Ga-DOTATATE in the tumor than with 68Ga-DOTANOC and 68Ga-DOTATOC, suggesting a higher diagnostic value of 68Ga-DOTATATE for detecting meningiomas. PMID:25369268

  3. Meningiomas: a comparative study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for molecular imaging in mice.

    Directory of Open Access Journals (Sweden)

    María Luisa Soto-Montenegro

    Full Text Available The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three (68Ga-DOTA-labeled somatostatin analogues ((68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE using PET/CT in a murine model with subcutaneous meningioma xenografts.The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN. (68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L and tumor-to-muscle (T/M SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt was determined.Hepatic SUVmax and Vt were significantly higher with (68Ga-DOTANOC than with (68Ga-DOTATOC and (68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between (68Ga-DOTATATE and (68Ga-DOTATOC, both of which had a higher fraction than (68Ga-DOTANOC. The T/M SUV ratio was significantly higher with (68Ga-DOTATATE than with (68Ga-DOTATOC and (68Ga-DOTANOC. The Vt for tumor was higher with (68Ga-DOTATATE than with (68Ga-DOTANOC and relatively similar to that of (68Ga-DOTATOC.This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with (68Ga-DOTATATE and (68Ga-DOTATOC, uptake was higher with (68Ga-DOTATATE in the tumor than with (68Ga-DOTANOC and (68Ga-DOTATOC, suggesting a higher diagnostic value of (68Ga-DOTATATE for detecting meningiomas.

  4. Ga2O3 doping and vacancy effect in KNN—LT lead-free piezoceramics

    Science.gov (United States)

    Tan, Zhi; Xing, Jie; Jiang, Laiming; Zhu, Jianguo; Wu, Bo

    2017-12-01

    Ga2O3 was doped into 0.95(K0.48Na0.52)NbO3—0.05LiTaO3 (KNN—LT) ceramics and its influences on the sintering behavior, phase structure and electrical properties of ceramics were studied. Firstly, SEM observation exhibits that more and more glass phase appears in ceramics with the gradual addition of Ga2O3, which determines the continuous decrease in sintering temperatures. And the addition of Ga2O3 is also found to increase the orthorhombic—tetragonal transition temperature ( T O—T) of system to a higher level. Secondly, both the density and the coercive field ( E C) of ceramics increase firstly and then decrease with increasing the Ga2O3 content, and the KNN—LT— xGa sample at x = 0.004 shows a pinched P— E hysteresis loop. Finally, the impedance characteristics of KNN—LT— xGa ceramics were investigated at different temperatures, revealing a typical vacancy related conduction mechanism. This work demonstrates that Ga2O3 is a good sintering aid for KNN-based ceramics, and the vacancy plays an important role in the sintering and electrical behaviors of ceramics.

  5. Source of Gallium-67 in gastrointestinal contents: concise communication

    International Nuclear Information System (INIS)

    Chen, D.C.; Scheffel, U.; Camargo, E.E.; Tsan, M.F.

    1980-01-01

    The sources of Ga-67 in gastrointestinal (GI) contents, and factors affecting its secretion were studied in rats. To prevent loss of fecal Ga-67, the anus was sutured before intravenous injection of Ga-67 citrate. Secretion of Ga-67 into the contents of the GI tract was rapid, 3, 6, and 9% of the injected dose were secreted at 1, 6, and 24 hr after injection, respectively. In contrast, Ga-67 concentration in the GI tissues remained relatively constant throughout this period. Analysis of Ga-67 contents of various parts of the GI tract revealed that small intestine is its major source, contributing 60% while the bile contributes 20%, large intestine 10%, esophagus and stomach 10%. Feeding had no effect on the Ga-67 secretion into GI contents. In contrast, the serum unbound iron-binding capacity (UIBC) played an important role in the GI secretion of Ga-67; reducing the serum UIBC reduced the Ga-67 secretion into GI contents

  6. Investigation of localization effect in GaN-rich InGaN alloys and ...

    Indian Academy of Sciences (India)

    Abstract. The temperature-dependent PL properties of GaN-rich InxGa1−xN alloys is investigated and S-shaped temperature dependence is observed in all InGaN samples. It is found that the origin of localization effect in samples. A and B are different from that in sample C. For samples A and B, In content fluctuations ...

  7. Study of wurtzite and zincblende GaN/InN based solar cells alloys: First-principles investigation within the improved modified Becke-Johnson potential

    KAUST Repository

    Ul Haq, Bakhtiar

    2014-09-01

    Wurtzite GaInN alloys with flexible energy gaps are pronounced for their potential applications in optoelectronics and solar cell technology. Recently the unwanted built-in fields caused by spontaneous polarization and piezoelectric effects in wurtzite (WZ) GaInN, has turned the focus towards zinc-blende (ZB) GaInN alloys. To comprehend merits and demerits of GaInN alloys in WZ and ZB structures, we performed a comparative study of the structural, electronic and optical properties of Ga1-xInxN alloys with different In concentration using first-principles methodology with density function theory with generalized gradient approximations (GGA) and modified Becke-Johnson (mBJ) potential. Investigations pertaining to total energy of GaInN for the both phases, demonstrate a marginal difference, reflecting nearly equivalent stability of the ZB-GaInN to WZ-GaInN. The larger ionic radii of indium (In), result in larger values of lattice parameters of Ga1-xInxN with higher In concentration. For In deficient Ga1-xInxN, at first, the formation enthalpies increase rapidly as the In content approaches to 45% in WZ and 47% in ZB, and then decreases with the further increase in In concentration. ZB-Ga1-xInxN alloys exhibit comparatively narrower energy gaps than WZ, and get smaller with increase in In contents. The smaller values of effective masses of free carriers, in WZ phase, than ZB phase, reflect higher carrier mobility and electrical conductivity of WZ-Ga1-xInxN. Moreover wide energy gap of WZ-Ga1-xInxN results in large values of the absorption coefficients comparatively and smaller static refractive indices compared to ZB-Ga1-xInxN. Comparable electronic and optical characteristics of the ZB-Ga1-xInxN to WZ-Ga1-xInxN endorses it a material of choice for optoelectronics and solar cell applications besides the WZ-Ga1-xInxN. © 2014 Elsevier Ltd.

  8. Study of wurtzite and zincblende GaN/InN based solar cells alloys: First-principles investigation within the improved modified Becke-Johnson potential

    KAUST Repository

    Ul Haq, Bakhtiar; Ahmed, Rashid; Shaari, Amiruddin; El Haj Hassan, Fouad; Kanoun, Mohammed; Goumri-Said, Souraya

    2014-01-01

    Wurtzite GaInN alloys with flexible energy gaps are pronounced for their potential applications in optoelectronics and solar cell technology. Recently the unwanted built-in fields caused by spontaneous polarization and piezoelectric effects in wurtzite (WZ) GaInN, has turned the focus towards zinc-blende (ZB) GaInN alloys. To comprehend merits and demerits of GaInN alloys in WZ and ZB structures, we performed a comparative study of the structural, electronic and optical properties of Ga1-xInxN alloys with different In concentration using first-principles methodology with density function theory with generalized gradient approximations (GGA) and modified Becke-Johnson (mBJ) potential. Investigations pertaining to total energy of GaInN for the both phases, demonstrate a marginal difference, reflecting nearly equivalent stability of the ZB-GaInN to WZ-GaInN. The larger ionic radii of indium (In), result in larger values of lattice parameters of Ga1-xInxN with higher In concentration. For In deficient Ga1-xInxN, at first, the formation enthalpies increase rapidly as the In content approaches to 45% in WZ and 47% in ZB, and then decreases with the further increase in In concentration. ZB-Ga1-xInxN alloys exhibit comparatively narrower energy gaps than WZ, and get smaller with increase in In contents. The smaller values of effective masses of free carriers, in WZ phase, than ZB phase, reflect higher carrier mobility and electrical conductivity of WZ-Ga1-xInxN. Moreover wide energy gap of WZ-Ga1-xInxN results in large values of the absorption coefficients comparatively and smaller static refractive indices compared to ZB-Ga1-xInxN. Comparable electronic and optical characteristics of the ZB-Ga1-xInxN to WZ-Ga1-xInxN endorses it a material of choice for optoelectronics and solar cell applications besides the WZ-Ga1-xInxN. © 2014 Elsevier Ltd.

  9. Gallium adsorption on (0001) GaN surfaces

    International Nuclear Information System (INIS)

    Adelmann, Christoph; Brault, Julien; Mula, Guido; Daudin, Bruno; Lymperakis, Liverios; Neugebauer, Joerg

    2003-01-01

    We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. Based on the experimental results we find that for substrate temperatures and Ga fluxes typically used in molecular-beam epitaxy of GaN, finite equilibrium Ga surface coverages can be obtained. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. In particular, we show that a large range of Ga fluxes exists, where 2.5±0.2 monolayers (in terms of the GaN surface site density) of Ga are adsorbed on the GaN surface. We further demonstrate that the structure of this adsorbed Ga film is in good agreement with the laterally contracted Ga bilayer model predicted to be most stable for strongly Ga-rich surfaces [Northrup et al., Phys. Rev. B 61, 9932 (2000)]. For lower Ga fluxes, a discontinuous transition to Ga monolayer equilibrium coverage is found, followed by a continuous decrease towards zero coverage; for higher Ga fluxes, Ga droplet formation is found, similar to what has been observed during Ga-rich GaN growth. The boundary fluxes limiting the region of 2.5 monolayers equilibrium Ga adsorption have been measured as a function of the GaN substrate temperature giving rise to a Ga/GaN adsorption phase diagram. The temperature dependence is discussed within an ab initio based growth model for adsorption taking into account the nucleation of Ga clusters. This model consistently explains recent contradictory results of the activation energy describing the critical Ga flux for the onset of Ga droplet formation during Ga-rich GaN growth [Heying et al., J. Appl. Phys. 88, 1855 (2000); Adelmann et al., J. Appl. Phys. 91, 9638 (2002).

  10. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

    International Nuclear Information System (INIS)

    Li Yanbo; Zhang Yang; Zhang Yuwei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping

    2012-01-01

    We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (Ga Sb ) defect.

  11. Targhee Russet: A high yielding dual purpose, long russet potato cultivar having higher protein and vitamin C content and resistance to tuber soft rot

    Science.gov (United States)

    Targhee Russet is a dark-skinned russet potato variety with tubers slightly longer than Russet Burbank. It produces higher total and marketable yields than does Russet Burbank at most of the sites it was tested in the western United States. Tuber dormancy is about 58 days shorter than Russet Burba...

  12. Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

    Science.gov (United States)

    Bhattacharya, P. K.; Dhar, S.; Berger, P.; Juang, F.-Y.

    1986-01-01

    A study has been made of the effects of adding small amounts of In (0.2-1.2 pct) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by Briones and Collins (1982) and Skromme et al. (1985).

  13. Universal Signatures of Quantum Critical Points from Finite-Size Torus Spectra: A Window into the Operator Content of Higher-Dimensional Conformal Field Theories.

    Science.gov (United States)

    Schuler, Michael; Whitsitt, Seth; Henry, Louis-Paul; Sachdev, Subir; Läuchli, Andreas M

    2016-11-18

    The low-energy spectra of many body systems on a torus, of finite size L, are well understood in magnetically ordered and gapped topological phases. However, the spectra at quantum critical points separating such phases are largely unexplored for (2+1)D systems. Using a combination of analytical and numerical techniques, we accurately calculate and analyze the low-energy torus spectrum at an Ising critical point which provides a universal fingerprint of the underlying quantum field theory, with the energy levels given by universal numbers times 1/L. We highlight the implications of a neighboring topological phase on the spectrum by studying the Ising* transition (i.e. the transition between a Z_{2} topological phase and a trivial paramagnet), in the example of the toric code in a longitudinal field, and advocate a phenomenological picture that provides qualitative insight into the operator content of the critical field theory.

  14. Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

    Science.gov (United States)

    Golovynskyi, S.; Datsenko, O.; Seravalli, L.; Kozak, O.; Trevisi, G.; Frigeri, P.; Babichuk, I. S.; Golovynska, I.; Qu, Junle

    2017-12-01

    Deep levels in metamorphic InAs/In x Ga1-x As quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/GaAs QDs investigated previously by the same techniques. We have found that for a low content of indium (x = 0.15) the trap density in the plane of self-assembled QDs is comparable or less than the one for InGaAs/GaAs QDs. However, the trap density increases with x, resulting in a rise of the defect photoresponse in PC and TSC spectra as well as a reduction of the QD PL intensity. The activation energies of the deep levels and some traps correspond to known defect complexes EL2, EL6, EL7, EL9, and EL10 inherent in GaAs, and three traps are attributed to the extended defects, located in InGaAs embedding layers. The rest of them have been found as concentrated mainly close to QDs, as their density in the deeper InGaAs buffers is much lower. This an important result for the development of light-emitting and light-sensitive devices based on metamorphic InAs QDs, as it is a strong indication that the defect density is not higher than in pseudomorphic InAs QDs.

  15. DC electrodeposition of NiGa alloy nanowires in AAO template

    Energy Technology Data Exchange (ETDEWEB)

    Maleki, K. [Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Iran, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Sanjabi, S., E-mail: sanjabi@modares.ac.ir [Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Iran, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Alemipour, Z. [Department of Physics, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

    2015-12-01

    NiGa alloy nanowires were electrodeposited from an acidic sulfate bath into nanoporous anodized alumina oxide (AAO). This template was fabricated by two-step anodizing. The effects of bath composition and current density were explored on the Ga content of electrodeposited nanowires. The Ga content in the deposits was increased by increasing both Ga in the bath composition and electrodepositing current density. The NiGa alloy nanowires were synthesized for Ga content up to 2–4% without significant improving the magnetic properties. Above this threshold Ga clusters were formed and decreased the magnetic properties of the nanowires. For Ga content of the alloy above 30%, the wires were too short and incomplete. X-ray diffraction patterns reveal that the significant increase of Ga content in the nanowires, changes the FCC crystal structure of Ni to an amorphous phase. It also causes a sizeable increase in the Ga cluster size; these both lead to a significant reduction in the coercivity and the magnetization respectively. - Highlights: • NiGa alloy nanowires were electrodeposited from acidic sulphate baths into nanoporous anodized alumina oxide (AAO) template. • The Ga content was increased by increasing the Ga in the bath composition and electrodeposition current density. • The magnetic parameters such as coercivity and magnetization were not changed for the alloy nanowire with Ga content less than 4%.

  16. Interleukins 6 and 15 Levels Are Higher in Subcutaneous Adipose Tissue, but Obesity Is Associated with Their Increased Content in Visceral Fat Depots

    Directory of Open Access Journals (Sweden)

    Marta Izabela Jonas

    2015-10-01

    Full Text Available Excess adiposity is associated with chronic inflammation, which takes part in the development of obesity-related complications. The aim of this study was to establish whether subcutaneous (SAT or visceral (VAT adipose tissue plays a major role in synthesis of pro-inflammatory cytokines. Concentrations of interleukins (IL: 1β, 6, 8 and 15 were measured at the protein level by an ELISA-based method and on the mRNA level by real-time PCR in VAT and SAT samples obtained from 49 obese (BMI > 40 kg/m2 and 16 normal-weight (BMI 20–24.9 kg/m2 controls. IL-6 and IL-15 protein concentrations were higher in SAT than in VAT for both obese (p = 0.003 and p < 0.0001, respectively and control individuals (p = 0.004 and p = 0.001, respectively, while for IL-1β this was observed only in obese subjects (p = 0.047. What characterized obese individuals was the higher expression of IL-6 and IL-15 at the protein level in VAT compared to normal-weight controls (p = 0.047 and p = 0.016, respectively. Additionally, obese individuals with metabolic syndrome had higher IL-1β levels in VAT than did obese individuals without this syndrome (p = 0.003. In conclusion, concentrations of some pro-inflammatory cytokines were higher in SAT than in VAT, but it was the increased pro-inflammatory activity of VAT that was associated with obesity and metabolic syndrome.

  17. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Science.gov (United States)

    Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

    2018-05-01

    The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

  18. Exploring the radiosynthesis and in vitro characteristics of [68 Ga]Ga-DOTA-Siglec-9.

    Science.gov (United States)

    Jensen, Svend B; Käkelä, Meeri; Jødal, Lars; Moisio, Olli; Alstrup, Aage K O; Jalkanen, Sirpa; Roivainen, Anne

    2017-07-01

    Vascular adhesion protein 1 is a leukocyte homing-associated glycoprotein, which upon inflammation rapidly translocates from intracellular sources to the endothelial cell surface. It has been discovered that the cyclic peptide residues 283-297 of sialic acid-binding IgG-like lectin 9 (Siglec-9) "CARLSLSWRGLTLCPSK" bind to vascular adhesion protein 1 and hence makes the radioactive analogues of this compound ([ 68 Ga]Ga-DOTA-Siglec-9) interesting as a noninvasive visualizing marker of inflammation. Three different approaches to the radiosynthesis of [ 68 Ga]Ga-DOTA-Siglec-9 are presented and compared with previously published methods. A simple, robust radiosynthesis of [ 68 Ga]Ga-DOTA-Siglec-9 with a yield of 62% (non decay-corrected) was identified, and it had a radiochemical purity >98% and a specific radioactivity of 35 MBq/nmol. Furthermore, the protein binding and stability of [ 68 Ga]Ga-DOTA-Siglec-9 were analyzed in vitro in mouse, rat, rabbit, pig, and human plasma and compared with in vivo pig results. The plasma in vitro protein binding of [ 68 Ga]Ga-DOTA-Siglec-9 was the lowest in the pig followed by rabbit, human, rat, and mouse. It was considerably higher in the in vivo pig experiments. The in vivo stability in pigs was lower than the in vitro stability. Despite considerable species differences, the observed characteristics of [ 68 Ga]Ga-DOTA-Siglec-9 are suitable as a positron emission tomography tracer. Copyright © 2017 John Wiley & Sons, Ltd.

  19. Strain-balanced InGaN/GaN multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1−x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1−y}N templates for x > y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1−x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1−y}N template. Growth of the In{sub y}Ga{sub 1−y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1−y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1−x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1−y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  20. Growth and characterization of Ga(As,N) and (In,Ga)(As,N)

    International Nuclear Information System (INIS)

    Mussler, G.

    2005-01-01

    This dissertation deals with the MBE growth and characterization of Ga(As,N) and (In,Ga)(As,N). The work commences with the optimization of the Ga(As,N) growth. Owing to a large miscibility gap of GaN in GaAs, the incorporation of nitrogen into GaAs causes a structural degradation that is dependent on the substrate temperature, the nitrogen concentration, and the quantum well thickness. Another problem related to the growth of Ga(As,N) are point defects that have a detrimental influence on optical properties. A thermal treatment of Ga(As,N) reduces the concentration of these point defects. This leads to a substantial improvement of optical properties. We will show that nitrogen split interstitials that incorporate into gallium and arsenic vacancies may be attributed to these point defects. A thermal treatment of Ga(As,N) at high temperatures, on the contrary, results in a creation of extended defects which are detrimental to optical properties. We show that the temperature of the thermal treatment that yields the highest photoluminescence intensity is nitrogen concentration-dependent. The growth of (In,Ga)(As,N) is similar with respect to Ga(As,N). Again, one has to face a high miscibility gap of (In,Ga)N in (In,Ga)As that results in a structural degradation. A thermal treatment of (In,Ga)(As,N) is also beneficial for improving optical properties. We show that a thermal treatment of (In,Ga)As results in an indium diffusion that is suppressed by the incorporation of nitrogen. The characterization of (In,Ga)(As,N) edge emitting lasers shows emission at wavelengths up to 1366 nm. With higher nitrogen concentrations, there is a strong increase of the threshold current density and a decrease of the output power

  1. Indium (In) Effects to The Efficiency Performance of Ga1-XInxP/GaAs Based Solar Cell Using Silvaco Software Modelling & Simulation

    Science.gov (United States)

    Norizan, M. N.; Zahari, S. M.; Mohamad, I. S.; Osman, R. A. M.; Shahimin, M. M.; Murad, S. A. Z.

    2017-06-01

    Ga1-xInxP composition has been applied to the top cell of multi-junction GaInP/GaAs based solar cell and currently have achieving a conversion efficiency of more than 46%, however its capability is unclear. We performed an analysis using Silvaco simulation method to evaluate the effect of In and the substitution was made to the Ga1-xInxP for the range of x from 0 to 1. We found that the highest efficiency recorded was 17.66% when the composition of Indium was x=1. The efficiency has been increasing about 11.71% from x=0 to x=1 In content. As the composition of In raised, the value of efficiency and short circuit current density, Jsc also become higher (13.60 mA/cm2) by having a greater photon absorption in a wider band gap energy. In addition to that, Voc, Pmax, Vmax, Imax and fill factor was measured to be 2.15 V, 2.44 mW/cm2, 2.0 V, 1.22 mA/cm2 and 83.34 respectively. In conclusion, this study confirms that the existence of In in Ga1-xInxP improves the solar cell efficiency by gaining a higher energy gap and producing more electrons for best achievement in multilayer solar cell applications.

  2. Are lower epiphytes really that better than higher plants for indicating airborne contaminants? An insight into the elemental contents of lichen thalli and tree bark by INAA

    International Nuclear Information System (INIS)

    Pacheco, A.M.G.; Freitas, M.C.

    2004-01-01

    Few dedicated attempts at comparing the monitoring performance of lower and higher plants have been carried out so far. As a contribution to such an issue, the relative magnitude of elemental signals from epiphytic lichens (Parmelia spp.) and olive tree (Olea europaea Linn.) bark, determined by INAA is studied. A representative set of 12 elements - As, Ba, Br, Ca, Cl, K, Mg, Mn, Na, Sr, V, Zn - was used for an ab initio comparison between raw data and Rb-normalized data, using distribution-free statistics. Correlation analysis shows an overall improvement in the degree of association between bark and lichen signals when proceeding from raw data to relative enrichment. Apart from Cl, no element is enriched in lichens to a higher extent than in bark. Sign tests are quite conclusive: bark factors are either statistically greater than or equal to lichens'. These findings prompt a word of caution when dealing with biological monitoring data, without accounting for soil, rock or litter inputs into the biomonitors' elemental pools. (author)

  3. Teacher training: the use of media content and technology in the process of teaching and learning in higher education - doi: 10.4025/actascieduc.v33i1.11307

    Directory of Open Access Journals (Sweden)

    Cláudia Cristina Batistela Francisco

    2011-07-01

    Full Text Available This article aims to discuss and analyze media content and use of Information and Communication Technology - ICT in teaching and learning in higher education institutions, reflecting on issues of teacher education. For that, we held a discussion in the literature that presents the difficulties faced by teachers in this new educational reality, raising questions about their training, and how they should act in a way that learning is carried with media students, with support of technologies and media

  4. Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVD

    International Nuclear Information System (INIS)

    Lu, D.; Florescu, D.I.; Lee, D.S.; Ramer, J.C.; Parekh, A.; Merai, V.; Li, S.; Begarney, M.J.; Armour, E.A.; Gardner, J.J.

    2005-01-01

    Nonuniform indium distribution within InGaN/GaN single quantum well (SQW) structures with nanoscale islands grown by metalorganic chemical vapor deposition (MOCVD) have been characterized by advanced characterization techniques. Robinson backscattered electron (BSE) measurements show cluster-like BSE contrast of high brightness regions, which are not centered at small dark pits in a SQW structure of spiral growth mode. By comparing with the secondary electron (SE) images, the bright cluster areas from the BSE images were found to have higher indium content compared to the surrounding dark areas. Temperature dependant photoluminescence (PL) measurement shows typical ''S-shape'' curve, which shows good correlation with nonuniform indium distribution from BSE measurement. Optical evaluation of the samples show increased PL slope efficiency of the spiral mode SQW, which can be attributed to the presence of Indium inhomogeneities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. A HIGHER PROPORTION OF PUFA IN DIET INCREASES THE PUFA CONTENT IN RABBIT MEAT, BUT REDUCES THE OXIDATIVE STABILITY OF MEAT

    Directory of Open Access Journals (Sweden)

    Tina Trebušak

    2015-09-01

    Full Text Available The aim of our study was to determine the changes in the fatty acid composition of rabbit meat, if palm fat (99% of saturated fatty acids (SFA, as a source of fat in rabbit diet, was replaced with linseed oil (71% of polyunsaturated fatty acids (PUFA, containing 52% of α-linolenic acid (n-3 PUFA. The Ganoderma lucidum or olive leaves were added in the diet as potential antioxidant in order to protect the PUFA against oxidation. 48 SIKA rabbits were randomly divided by mass and gender in four groups: CONT- 6% palm fat, CONT+ 6% linseed oil, REISHI 6% linseed oil and 1% Ganoderma lucidum, OLIVE 6% linseed oil and 1% olive leaves. After 22 days of the experimental procedure, the samples of back muscle were taken and divided in 7 portions. One was for fatty acid determination, other six for malondialdehyde (MDA determination after different storage condition; fresh, 6 days at 4°C or 3 months at -20°C, raw or cooked (60 minutes, 85°C. Addition of linseed oil resulted in a significant higher proportion of PUFA (n-3 PUFA and monounsaturated fatty acid (MUFA and lower proportion of SFA in the back muscle, but the oxidative stability of meat was reduced, since the level of MDA was significantly higher. After cooking, the level of MDA increased in all the groups, but more in the groups with linseed oil in the diet, the addition of Ganoderma lucidum or olive leaves slightly decreased the level of MDA, but the difference was not significant.

  6. Tuning high frequency magnetic properties and damping of FeGa, FeGaN and FeGaB thin films

    Directory of Open Access Journals (Sweden)

    Derang Cao

    2017-11-01

    Full Text Available A series of FeGa, FeGaN and FeGaB films with varied oblique angles were deposited by sputtering method on silicon substrates, respectively. The microstructure, soft magnetism, microwave properties, and damping factor for the films were investigated. The FeGa films showed a poor high frequency magnetic property due to the large stress itself. The grain size of FeGa films was reduced by the additional N element, while the structure of FeGa films was changed from the polycrystalline to amorphous phase by the involved B element. As a result, N content can effectively improve the magnetic softness of FeGa film, but their high frequency magnetic properties were still poor both when the N2/Ar flow rate ratio is 2% and 5% during the deposition. The additional B content significantly led to the excellent magnetic softness and the self-biased ferromagnetic resonance frequency of 1.83 GHz for FeGaB film. The dampings of FeGa films were adjusted by the additional N and B contents from 0.218 to 0.139 and 0.023, respectively. The combination of these properties for FeGa films are helpful for the development of magnetostrictive microwave devices.

  7. Investigation of gallium redistribution processes during Cu(In,Ga)Se{sub 2} absorber formation from electrodeposited/annealed oxide precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Sidali, T., E-mail: tarik.sidali@edf.fr; Duchatelet, A.; Chassaing, E.; Lincot, D.

    2015-05-01

    A way to prepare metallic precursors for CuIn{sub 1−x},Ga{sub x}Se{sub 2} (CIGS) solar cells has been recently introduced leading to efficiencies above 12.4%. It consists in the electrodeposition of Cu-In-Ga mixed oxides in an acidic nitrate aqueous solution followed by thermal reduction and selenization. This paper investigates, in a first part, the nucleation and growth mechanisms taking place during the co-electrodeposition of Cu-In-Ga oxide/hydroxide film. Scanning Electron Microscope observations coupled to Energy Dispersive X-ray spectrometry point out that the deposition is initiated by the formation of metallic copper nuclei. These nuclei enable the growth of Cu-In-Ga oxide film. This observation confirms that freshly deposited copper catalyzes nitrate reduction leading to an increase in the surface pH enabling the precipitation of the Cu-In-Ga hydroxides. In a second part, precursor films were elaborated with increasing Ga(NO{sub 3}){sub 3} concentration. After reduction of the films in hydrogen and selenization heat treatments, X-ray diffraction analysis shows the incorporation of Ga into the CIGS phase with increasing Ga content in the optimal composition range for photovoltaic applications (x = 0.25-0.34). Gallium composition profiles are evidenced in the films with a tendency to higher concentration near the Mo surface. Increasing annealing temperature allows a better homogenization of Ga in the film. The consequences are correlated to optoelectronic measurements (Eg and cell efficiency) with bandgap measurement and cell efficiencies (10 to 12%). - Highlights: • Electrodeposition starts with copper nucleation. • Gallium content in the precursor is tuned by Ga(III) concentration. • Increasing selenization temperature promotes Ga homogenization in CIGS.

  8. Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsui, Kazuhiro; Matsubayashi, Daisuke; Ishihara, Noritaka; Takasu, Takako; Matsuda, Shinpei; Yamazaki, Shunpei [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi-shi 243-0036, Kanagawa (Japan)

    2015-12-28

    The electron mobility of In-Ga-Zn-oxide (IGZO) is known to be enhanced by higher In content. We theoretically investigated the mobility-enhancement mechanism by proposing an In-Ga-Zn-disorder scattering model for an In-rich crystalline IGZO (In{sub 1+x}Ga{sub 1−x}O{sub 3}(ZnO){sub m} (0 < x < 1, m > 0)) thin film. The obtained theoretical mobility was found to be in agreement with experimental Hall mobility for a crystalline In{sub 1.5}Ga{sub 0.5}O{sub 3}(ZnO) (or In{sub 3}GaZn{sub 2}O{sub 8}) thin film. The mechanism specific to In-rich crystalline IGZO thin films is based on three types of Coulomb scattering potentials that originate from effective valence differences. In this study, the In-Ga-Zn-disorder scattering model indicates that the effective valence of the In{sup 3+} ions in In-rich crystalline IGZO thin films significantly affects their electron mobility.

  9. Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2012-04-15

    In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

  10. Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN

    International Nuclear Information System (INIS)

    Zainal, N.; Novikov, S.V.; Akimov, A.V.; Staddon, C.R.; Foxon, C.T.; Kent, A.J.

    2012-01-01

    The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10 μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50 μm thick. The surface morphology of thick c-GaN is also presented.

  11. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    Science.gov (United States)

    Grady, R.; Bayram, C.

    2017-07-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga(1-X)N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga(1-X)N/GaN heterojunction is formed through intentional δ-doping part of the Al X Ga(1-X)N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga(1-X)N barrier; δ-doping location (within the Al X Ga(1-X)N barrier), δ-doped Al X Ga(1-X)N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga(1-X)N barrier results in a normally-off behavior whereas Al X Ga(1-X)N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology.

  12. Resonant photoemission at the Ga 3p photothreshold in In xGa1-xN

    International Nuclear Information System (INIS)

    Colakerol, L.; Glans, P.-A.; Plucinski, L.; Zhang, Y.; Smith, K.E.; Zakharov, A.A.; Nyholm, R.; Cabalu, J.; Moustakas, T.D.

    2006-01-01

    Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film In x Ga 1-x N alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d 8 state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of In x Ga 1-x N thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases

  13. Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

    International Nuclear Information System (INIS)

    López-Escalante, M.C.; Gabás, M.; García, I.; Barrigón, E.; Rey-Stolle, I.; Algora, C.; Palanco, S.; Ramos-Barrado, J.R.

    2016-01-01

    Graphical abstract: - Highlights: • GaAs, AlInP and GaInP epi-layers grown in a MOVPE facility. • GaAs/GaInP and GaAs/AlInP interfaces studied through the combination of angle resolved and depth profile X-ray photoelectros spectroscopies. • GaAs/GaInP interface shows no features appart from GaAs, GaInP and mixed GaInAs or GaInAsP phases. • GaAs/AlInP interface shows traces of an anomalous P environment, probably due to P-P clusters. - Abstract: GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar + sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface.

  14. Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

    Energy Technology Data Exchange (ETDEWEB)

    López-Escalante, M.C., E-mail: mclopez@uma.es [Nanotech Unit, Laboratorio de Materiales y Superficies, Departamento de Ingeniería Química, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain); Gabás, M. [The Nanotech Unit, Depto. de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga Spain (Spain); García, I.; Barrigón, E.; Rey-Stolle, I.; Algora, C. [Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid Spain (Spain); Palanco, S.; Ramos-Barrado, J.R. [The Nanotech Unit, Depto. de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga Spain (Spain)

    2016-01-01

    Graphical abstract: - Highlights: • GaAs, AlInP and GaInP epi-layers grown in a MOVPE facility. • GaAs/GaInP and GaAs/AlInP interfaces studied through the combination of angle resolved and depth profile X-ray photoelectros spectroscopies. • GaAs/GaInP interface shows no features appart from GaAs, GaInP and mixed GaInAs or GaInAsP phases. • GaAs/AlInP interface shows traces of an anomalous P environment, probably due to P-P clusters. - Abstract: GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar{sup +} sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface.

  15. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

    International Nuclear Information System (INIS)

    De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

    2010-01-01

    The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. An A20/AN1-type zinc finger protein modulates gibberellins and abscisic acid contents and increases sensitivity to abiotic stress in rice (Oryza sativa).

    Science.gov (United States)

    Zhang, Ye; Lan, Hongxia; Shao, Qiaolin; Wang, Ruqin; Chen, Hui; Tang, Haijuan; Zhang, Hongsheng; Huang, Ji

    2016-01-01

    The plant hormones gibberellins (GA) and abscisic acid (ABA) play important roles in plant development and stress responses. Here we report a novel A20/AN1-type zinc finger protein ZFP185 involved in GA and ABA signaling in the regulation of growth and stress response. ZFP185 was constitutively expressed in various rice tissues. Overexpression of ZFP185 in rice results in a semi-dwarfism phenotype, reduced cell size, and the decrease of endogenous GA3 content. By contrast, higher GA3 content was observed in RNAi plants. The application of exogenous GA3 can fully rescue the semi-dwarfism phenotype of ZFP185 overexpressing plants, suggesting the negative role of ZFP185 in GA biosynthesis. Besides GA, overexpression of ZFP185 decreased ABA content and expression of several ABA biosynthesis-related genes. Moreover, it was found that ZFP185, unlike previously known A20/AN1-type zinc finger genes, increases sensitivity to drought, cold, and salt stresses, implying the negative role of ZFP185 in stress tolerance. ZFP185 was localized in the cytoplasm and lacked transcriptional activation potential. Our study suggests that ZFP185 regulates plant growth and stress responses by affecting GA and ABA biosynthesis in rice. © The Author 2015. Published by Oxford University Press on behalf of the Society for Experimental Biology. All rights reserved. For permissions, please email: journals.permissions@oup.com.

  17. Ga penetration into polymers

    Czech Academy of Sciences Publication Activity Database

    Hnatowicz, Vladimír; Švorčík, V.; Efimenko, K.; Rybka, V.

    1999-01-01

    Roč. 68, - (1999), s. 357-358 ISSN 0947-8396 R&D Projects: GA ČR GA202/96/0077; GA AV ČR KSK1048601 Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.753, year: 1999

  18. First-principle natural band alignment of GaN / dilute-As GaNAs alloy

    Directory of Open Access Journals (Sweden)

    Chee-Keong Tan

    2015-01-01

    Full Text Available Density functional theory (DFT calculations with the local density approximation (LDA functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

  19. Strain-engineering of GaInAsSb overgrown layers and its effects on the optical properties of InAs/GaAs quantum dots

    Science.gov (United States)

    Salhi, A.; Alshaibani, S.; Alaskar, Y.; Albrithen, H.; Albedri, A.; Alyamani, A.

    2018-05-01

    The effect of antimony incorporation in In0.11Ga0.89As overgrown layers on the optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy has been studied. The results of photoluminescence, high resolution X-ray diffraction, atomic force microscopy, power and temperature-dependent photoluminescence from 77 K to 300 K have been correlated to characterize the grown samples. The wavelength emission increases with Sb content, and it reaches ∼1367 nm and does not increase further because of Sb incorporation's saturation in the In0.11Ga0.89As layer. To redshift further the wavelength to 1432 nm, a reduction of the growth temperature of the In0.11Ga0.89As1-ySby layer from 500 °C to 440 °C was necessary. This achievement is accompanied by the transformation of the QDs distribution to 2 QDs families. The extracted activation energies suggest that the PL quenching is mainly attributed to the thermal transfer of carriers in the QDs to the higher energy levels in the defects located within the In0.11Ga0.89As1-ySby SRLs. The variation of PL FWHM with temperature was interpreted by carrier thermalization and capture among different QDs within the same QD family or between small and large QD families.

  20. Improvement of Orange II Photobleaching by Moderate Ga3+ Doping of Titania and Detrimental Effect of Structural Disorder on Ga Overloading

    Directory of Open Access Journals (Sweden)

    Václav Štengl

    2014-01-01

    Full Text Available Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III nitrate with urea. Incorporation of Ga3+ into the anatase lattice has a clear positive effect on the photocatalytic activity under UV and Vis light irradiation up to a certain extent of Ga. Ga3+ doping decreased the size of the crystallites, increased surface area, and affected texture of the samples. Higher amount of gallium leads to the formation of a nondiffractive phase, probably photocatalytically inactive. The titania sample with 2.18 wt.% Ge3+ had the highest activity during the photocatalysed degradation in the UV and visible light regions; the total bleaching of dye Orange II was achieved within 29 minutes. Ga concentration larger than 5% (up to 15% significantly inhibited the growth of the anatase crystal domains which formed the nondiffractive phase content and led to remarkable worsening of the photobleaching efficiency.

  1. AlGaInP quantum dots for optoelectronic applications in the visible spectral range; AlGaInP-Quantenpunkte fuer optoelektronische Anwendungen im sichtbaren Spektralbereich

    Energy Technology Data Exchange (ETDEWEB)

    Gerhard, Sven

    2013-01-10

    The scope of this work is the fabrication and characterization of AlGaInP quantum dots on GaP an GaAs substrates. Based on such quantum dots, semiconductor lasers have been realized, emitting between 660 nm and 730 nm at room temperature. The examination of broad-area lasers processed on these structures suggests that active layers of larger quantum dots with higher aluminium contents lead to lasers with better performance at similar emission wavelength. Additionally, quantum dots grown on GaP substrates have been characterized, that were embedded in AlGaP barriers. Since these barriers exhibit an indirect bandgap, a non-trivial band alignment within these structures is expected. In this work, numerical 3D-simulations are employed to calculate the band alignment including strain and internal fields. Also, ground state wavefunctions of charge carriers have been determined. A thorough comparison between theory and experiment connects the measured emission wavelength and luminescence intensities with calculated transition energies and wavefunction overlaps.

  2. Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.

    Science.gov (United States)

    Zhang, Feng; Ikeda, Masao; Zhang, Shu-Ming; Liu, Jian-Ping; Tian, Ai-Qin; Wen, Peng-Yan; Cheng, Yang; Yang, Hui

    2016-12-01

    The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.

  3. Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Kuwahara, Takaaki [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Kuwano, Noriyuki [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Kurisu, Akihiko; Okada, Narihito; Tadatomo, Kazuyuki [Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611 (Japan)

    2012-03-15

    A microstructure in an InGaN/GaN layer grown at the semipolar direction was observed in detail by means of transmission electron microscopy (TEM) in order to analyze the behaviour of dislocations. A (11 anti 22) GaN layer was first deposited on a maskless r (1 anti 102)-plane patterned-substrate, and then an In{sub x} Ga{sub 1-x}N (x =0.10, 0.24) was overgrown to be about 1 {mu}m in thickness. Dislocations near the interface of InGaN/GaN are classified into several types: 1 Threading dislocations lying on (0001). 2. Misfit dislocations lying on the interface of InGaN/GaN. 3. Dislocations along [1 anti 100] at a certain distance from the interface. 4. Dislocations newly formed at the interface and developing along [11 anti 20] on (0001). 5. Partial dislocations accompanied with a stacking fault on (0001). It was found that the misfit dislocations are arrayed in pairs at the direction along [1 anti 100] on the interface of (11 anti 22). Burgers vector of the misfit dislocations was found to be B = <2 anti 1 anti 13>/3. In case of B = [ anti 1 anti 123]/3, they are edge dislocations. The densities of dislocations and stacking faults increase with the In-content in InGaN. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    International Nuclear Information System (INIS)

    Song, Erdong; Martinez, Julio A; Li, Qiming; Pan, Wei; Wang, George T; Swartzentruber, Brian

    2016-01-01

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power. (paper)

  5. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

    Science.gov (United States)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

    2016-01-08

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  6. EFFECTS OF COLD STRATIFICATION AND GA3 ON GERMINATION OF ARBUTUS UNEDO SEEDS OF THREE PROVENANCES.

    Science.gov (United States)

    Pipinis, Elias; Stampoulidis, Athanasios; Milios, Elias; Kitikidou, Kyriaki; Radoglou, Kalliopi

    2017-01-01

    Arbutus unedo is a valuable Mediterranean shrub as an ornamental plant as well as fruit tree. Fresh fruits of A. unedo are a good source of antioxidants, of vitamins C, E and carotenoids and also are characterized by the high content of mineral elements. The effects of gibberellic acid (GA 3 ) and cold stratification (CS) on seed germination performance were investigated in A. unedo seeds collected from three provenances in the Northern part of Greece. Seeds of each provenance were soaked in solutions of GA 3 (500, 1000 or 2000 ppm) for 24 h and subsequently were subjected to CS at 3 - 5°C for 0, 1, 2, and 3 months. Non-stratified seeds of the three A. unedo provenances which were not treated with GA 3 solutions exhibited very low germination. However, seed germination was significantly improved after a one-month period of CS. Similarly, the non-stratified seeds of all three provenances became non-dormant after the treatment with 2000 ppm GA 3 and they germinated at high percentages. However, in untreated seeds with GA3, after a one-month CS period the seeds of the Pieria provenance exhibited higher germination percentage than that of Rodopi provenance seeds. Furthermore, in non-stratified seeds, the Pieria provenance seeds treated with GA3 germinated at higher percentages and more rapidly than those of the other two provenances. The results indicated that untreated seeds exhibited very low germination at 20/25°C. However, in all three provenances seed germinability was significantly improved by a one-month period of CS or treatment of seeds with 2000 ppm GA3. Furthermore, there was a considerable variability among seed provenances in response to the treatments which were applied.

  7. Elimination of trench defects and V-pits from InGaN/GaN structures

    International Nuclear Information System (INIS)

    Smalc-Koziorowska, Julita; Grzanka, Ewa; Czernecki, Robert; Schiavon, Dario; Leszczyński, Mike

    2015-01-01

    The microstructural evolution of InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor phase epitaxy was studied as a function of the growth temperature of the GaN quantum barriers (QBs). We observed the formation of basal stacking faults (BSFs) in GaN QBs grown at low temperature. The presence of BSFs terminated by stacking mismatch boundaries (SMBs) leads to the opening of the structure at the surface into a V-shaped trench loop. This trench may form above an SMB, thereby terminating the BSF, or above a junction between the SMB and a subsequent BSF. Fewer BSFs and thus fewer trench defects were observed in GaN QBs grown at temperatures higher than 830 °C. Further increase in the growth temperature of the GaN QBs led to the suppression of the threading dislocation opening into V-pits

  8. Structural Analysis of InxGa1−xN/GaN MQWs by Different Experimental Methods

    International Nuclear Information System (INIS)

    Ding Bin-Beng; Pan Feng; Fa Tao; Cheng Feng-Feng; Yao Shu-De; Feng Zhe-Chuan

    2011-01-01

    Structural properties of In x Ga 1−x N/GaN multi-quantum wells (MQWs) grown on sapphire by metal organic chemical vapor deposition are investigated by synchrotron radiation x-ray diffraction (SRXRD), Rutherford backscattering/channelling (RBS/C) and high-resolution transmission electron microscopy. The sample consists of eight periods of In x Ga 1−x N/GaN wells of 2.1 nm thickness and 8.5 nm thickness of GaN barrier, and the results are very close, which verifies the accuracy of the three methods. The indium content in In x Ga 1−x N/GaN MQWs by SRXRD and RBS/C is estimated, and results are in general the same. By RBS/C random spectra, the indium atomic lattice substitution rate is 94.0%, indicating that almost all indium atoms in In x Ga 1−x N/GaN MQWs are at substitution, that the indium distribution of each layer in In x Ga 1−x N/GaN MQWs is very homogeneous and that the In x Ga 1−x N/GaN MQWs have a very good crystalline quality. It is not accurate to estimate indium content in In x Ga 1−x N/GaN MQWs by photoluminescence (PL) spectra, because the result from the PL experimental method is very different from the results by the SRXRD and RBS/C experimental methods. (cross-disciplinary physics and related areas of science and technology)

  9. Strain-dependent magnetic anisotropy in GaMnAs on InGaAs templates

    Energy Technology Data Exchange (ETDEWEB)

    Daeubler, Joachim; Glunk, Michael; Schwaiger, Stephan; Dreher, Lukas; Schoch, Wladimir; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

    2008-07-01

    We have systematically studied the influence of strain on the magnetic anisotropy of GaMnAs by means of HRXRD reciprocal space mapping and angle-dependent magnetotransport. For this purpose, a series of GaMnAs layers with Mn contents of {proportional_to}5% was grown by low-temperature MBE on relaxed InGaAs/GaAs templates with different In concentrations, enabling us to vary the strain in the GaMnAs layers continuously from tensile to compressive, including the unstrained state. Considering both, as-grown and annealed samples, the anisotropy parameter describing the uniaxial out-of-plane magnetic anisotropy has been found to vary linearly with hole density and strain. As a consequence, the out-of-plane direction gradually undergoes a transition from a magnetic hard axis to a magnetic easy axis from compressive to tensile strain.

  10. Carrier quenching in InGaP/GaAs double heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wells, Nathan P., E-mail: nathan.p.wells@aero.org; Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T. [The Aerospace Corporation, Physical Sciences Laboratories, P.O. Box 92957, Los Angeles, California 90009 (United States); Forbes, David V.; Hubbard, Seth M. [NanoPower Research Labs, Rochester Institute of Technology, 156 Lomb Memorial Dr., Rochester, New York 14623 (United States)

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  11. The Formation and Characterization of GaN Hexagonal Pyramids

    Science.gov (United States)

    Zhang, Shi-Ying; Xiu, Xiang-Qian; Lin, Zeng-Qin; Hua, Xue-Mei; Xie, Zi-Li; Zhang, Rong; Zheng, You-Dou

    2013-05-01

    GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {101¯1¯} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.

  12. Two-dimensional electron and hole gases in GaN/AlGaN heterostructures; Zweidimensionale Elektronen- und Loechergase in GaN/AlGaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Link, A.

    2004-12-01

    The aim of this PhD thesis is to investigate the electronic properties of electron and hole gases in GaN/AlGaN heterostructures. Particularly, a deeper and broadened understanding of scattering mechanisms and transport properties is in the focus of this work. The main experimental techniques used for this purpose are the study of Shubnikov-de Haas (SdH) effect and Hall measurements at low temperatures. By means of these magnetotransport measurements, a series of GaN/AlGaN heterostructures with different Al content of the AlGaN barrier were investigated. Since the sheet carrier density of the 2DEG in these semiconductor structures is strongly dependent on the Al content (n{sub s}=2 x 10{sup 12}-10{sup 13} cm{sup -2}), the variation of transport parameters was determined as a function of sheet carrier concentration. First, from the temperature dependence of the SdH oscillations the effective transport mass was calculated. A Hall bar structure with an additional gate contact was used as an alternative to tune the carrier density of a 2DEG system independent of varying structural parametes such as Al content. Thus, the scattering mechanisms were investigated in the carrier density region between 3 x 10{sup 12} and 9.5 x 10{sup 12} cm{sup -2}. The transport properties of subband electrons were studied for a 2DEG system with two occupied subbands. (orig.)

  13. Expansion of the capabilities of the GA-4 legal weight truck spent fuel shipping cask

    International Nuclear Information System (INIS)

    Zimmer, A.; Razvi, J.; Johnson, L.; Welch, B.; Lancaster, D.

    2004-01-01

    General Atomics (GA) has developed the Model GA-4 Legal Weight Truck Spent Fuel Cask, a high capacity cask for the transport of four PWR spent fuel assemblies, and obtained a Certificate of Compliance (CoC No. 9226) in 1998 from the US Nuclear Regulatory Commission (NRC). The currently authorized contents in this CoC however, are much more limiting than the actual capability of the GA-4 cask to transport spent PWR fuel assemblies. The purpose of this paper is to show how the authorized contents can be significantly expanded by additional analyses without any changes to the physical design of the package. Using burnup credit per ISG-8 Rev. 2, the authorized contents can be significantly expanded by increasing the maximum enrichment as the burnup increases. Use of burnup credit eliminates much of the criticality imposed limits on authorized package contents, but shielding still limits the use of the cask for the higher burnup, short cooled fuel. By downloading to two assemblies and using shielding inserts, even the high burnup fuel with reasonable cooling times can be transported

  14. Investigation on the surface characterization of Ga-faced GaN after chemical-mechanical polishing

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Hua [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zhou, Yan; Shi, Xiaolei; Zou, Chunli; Zhang, Suman [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

    2015-05-30

    Highlights: • Tiny-sized nanoparticles were introduced in GaN CMP to realize a good surface. • The relationship between surface characterization and abrasive size was conducted. • An atomic step-terrace structure was achieved on GaN surface after CMP. • Pt/C catalyst nanoparticles were used in GaN CMP to get a higher MRR. - Abstract: The relationship between the surface characterization after chemical mechanical polishing (CMP) and the size of the silica (SiO{sub 2}) abrasive used for CMP of gallium nitride (GaN) substrates was investigated in detail. Atomic force microscope was used for measuring the surface morphology, pit feature, pit depth distribution, and atomic step-terrace structure. With the decrease of SiO{sub 2} abrasive size, the pit depth reduced and the atomic step-terrace structure became more whole with smaller damage area, resulting in smaller roughness. For tiny-sized SiO{sub 2} abrasive, an almost complete atomic step-terrace structure with 0.0523 nm roughness was achieved. On the other hand, in order to acquire higher removal, Pt/C nanoparticle was employed as a catalyst in CMP slurry. The result indicates that when Pt/C catalyst content was reached to 1.0 ppm, material removal rate was increased by 47.69% compared to that by none of the catalyst, and besides, the pit depth reduced and the surface atomic step-terrace structure was not destroyed. The Pt/C nanoparticle is proved to be the promising catalyst to the surface preparation of super-hard and inert materials with high efficiency and good surface.

  15. Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

    International Nuclear Information System (INIS)

    Perozek, J; Lee, H-P; Bayram, C; Krishnan, B; Paranjpe, A; Reuter, K B; Sadana, D K

    2017-01-01

    An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quantify the uniformity of structural, optical, and electrical properties of these AlGaN/GaN HEMT structures, scanning electron microscopy, optical microscopy, atomic-force microscopy, x-ray diffraction ( ω /2 θ scan and reciprocal space mapping) and Hall effect measurements are employed across the center, middle, and edge of the 200 mm wafer. Small thickness (<3%) and Al-content (<3%) variations in (Al)GaN layers across the wafer are recorded whereas a considerable change (28%) in the electron mobility is observed across the wafer that correlates with variations in surface roughness, defectivity, and layer stress. We attribute the higher mobility in the middle of the wafer to lower interface scattering, thanks to lower surface roughness and less edge-type dislocation density. Additionally, argon (Ar) ion implantation is used as a means for planar electrical isolation, and a seven orders of magnitude decrease in leakage current is achieved when an optimum Ar dose of 10 13 cm −2 is used. The feasibility of scaling AlGaN/GaN HEMTs on a 200 mm Si(1 1 1) platform is discussed. (paper)

  16. Noise performance in AlGaN/GaN HEMTs under high drain bias

    International Nuclear Information System (INIS)

    Pang Lei; Pu Yan; Lin Xinyu; Wang Liang; Liu Jian

    2009-01-01

    The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias. (semiconductor devices)

  17. High content of MYHC II in vastus lateralis is accompanied by higher VO2/power output ratio during moderate intensity cycling performed both at low and at high pedalling rates.

    Science.gov (United States)

    Majerczak, J; Szkutnik, Z; Karasinski, J; Duda, K; Kolodziejski, L; Zoladz, J A

    2006-06-01

    The aim of this study was to examine the relationship between the content of various types of myosin heavy chain isoforms (MyHC) in the vastus lateralis muscle and pulmonary oxygen uptake during moderate power output incremental exercise, performed at low and at high pedalling rates. Twenty one male subjects (mean +/- SD) aged 24.1 +/- 2.8 years; body mass 72.9 +/- 7.2 kg; height 179.1 +/- 4.8 cm; BMI 22.69 +/- 1.89 kg.m(-2); VO2max 50.6 +/- 5.3 ml.kg.min(-1), participated in this study. On separate days, they performed two incremental exercise tests at 60 rev.min(-1) and at 120 rev.min(-1), until exhaustion. Gas exchange variables were measured continuously breath by breath. Blood samples were taken for measurements of plasma lactate concentration prior to the exercise test and at the end of each step of the incremental exercise. Muscle biopsies were taken from the vastus lateralis muscle, using Bergström needle, and they were analysed for the content of MyHC I and MyHC II using SDS--PAGE and two groups (n=7, each) were selected: group H with the highest content of MyHC II (60.7 % +/- 10.5 %) and group L with the lowest content of MyHC II (27.6 % +/- 6.1 %). We have found that during incremental exercise at the power output between 30-120 W, performed at 60 rev.min(-1), oxygen uptake in the group H was significantly greater than in the group L (ANCOVA, p=0.003, upward shift of the intercept in VO2/power output relationship). During cycling at the same power output but at 120 rev.min(-1), the oxygen uptake was also higher in the group H, when compared to the group L (i.e. upward shift of the intercept in VO2/power output relationship, ANCOVA, p=0.002). Moreover, the increase in pedalling rate from 60 to 120 rev.min(-1) was accompanied by a significantly higher increase of oxygen cost of cycling and by a significantly higher plasma lactate concentration in subjects from group H. We concluded that the muscle mechanical efficiency, expressed by the VO2/PO ratio

  18. Assessment of spatial distribution of soil heavy metals using ANN-GA, MSLR and satellite imagery.

    Science.gov (United States)

    Naderi, Arman; Delavar, Mohammad Amir; Kaboudin, Babak; Askari, Mohammad Sadegh

    2017-05-01

    This study aims to assess and compare heavy metal distribution models developed using stepwise multiple linear regression (MSLR) and neural network-genetic algorithm model (ANN-GA) based on satellite imagery. The source identification of heavy metals was also explored using local Moran index. Soil samples (n = 300) were collected based on a grid and pH, organic matter, clay, iron oxide contents cadmium (Cd), lead (Pb) and zinc (Zn) concentrations were determined for each sample. Visible/near-infrared reflectance (VNIR) within the electromagnetic ranges of satellite imagery was applied to estimate heavy metal concentrations in the soil using MSLR and ANN-GA models. The models were evaluated and ANN-GA model demonstrated higher accuracy, and the autocorrelation results showed higher significant clusters of heavy metals around the industrial zone. The higher concentration of Cd, Pb and Zn was noted under industrial lands and irrigation farming in comparison to barren and dryland farming. Accumulation of industrial wastes in roads and streams was identified as main sources of pollution, and the concentration of soil heavy metals was reduced by increasing the distance from these sources. In comparison to MLSR, ANN-GA provided a more accurate indirect assessment of heavy metal concentrations in highly polluted soils. The clustering analysis provided reliable information about the spatial distribution of soil heavy metals and their sources.

  19. Investigation of GaN LED with Be-implanted Mg-doped GaN layer

    International Nuclear Information System (INIS)

    Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

    2004-01-01

    We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

  20. Defect Structure of High-Temperature-Grown GaMnSb/GaSb

    International Nuclear Information System (INIS)

    Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

    2010-01-01

    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

  1. Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer

    International Nuclear Information System (INIS)

    Fang, Zhilai; Shen, Xiyang; Wu, Zhengyuan; Zhang, Tong-Yi

    2015-01-01

    Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Overexpression of Arabidopsis thaliana gibberellic acid 20 oxidase (AtGA20ox) gene enhance the vegetative growth and fiber quality in kenaf (Hibiscus cannabinus L.) plants

    Science.gov (United States)

    Withanage, Samanthi Priyanka; Hossain, Md Aktar; Kumar M., Sures; Roslan, Hairul Azman B; Abdullah, Mohammad Puad; Napis, Suhaimi B.; Shukor, Nor Aini Ab.

    2015-01-01

    Kenaf (Hibiscus cannabinus L.; Family: Malvaceae), is multipurpose crop, one of the potential alternatives of natural fiber for biocomposite materials. Longer fiber and higher cellulose contents are required for good quality biocomposite materials. However, average length of kenaf fiber (2.6 mm in bast and 1.28 mm in whole plant) is below the critical length (4 mm) for biocomposite production. Present study describes whether fiber length and cellulose content of kenaf plants could be enhanced by increasing GA biosynthesis in plants by overexpressing Arabidopsis thaliana Gibberellic Acid 20 oxidase (AtGA20ox) gene. AtGA20ox gene with intron was overexpressed in kenaf plants under the control of double CaMV 35S promoter, followed by in planta transformation into V36 and G4 varieties of kenaf. The lines with higher levels of bioactive GA (0.3–1.52 ng g−1 fresh weight) were further characterized for their morphological and biochemical traits including vegetative and reproductive growth, fiber dimension and chemical composition. Positive impact of increased gibberellins on biochemical composition, fiber dimension and their derivative values were demonstrated in some lines of transgenic kenaf including increased cellulose content (91%), fiber length and quality but it still requires further study to confirm the critical level of this particular bioactive GA in transgenic plants. PMID:26175614

  3. Physics, MOVPE growth and investigation of m-plane GaN films and InGaN/GaN quantum wells on {gamma}-LiAlO{sub 2} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mauder, Christof

    2011-12-20

    fractions below 16% show strong, blue emission with excellent wavelength stability at increased excitation levels. For higher indium contents, the peaks become broader and weaker and exhibit a slight wavelength shift at higher intensities. Indium accumulation near defects or surface pits is seen as most likely origin. Higher indium contents on a nm scale are also blamed for the lower degree of polarization of emission compared to literature reports on nonpolar MQW. Indium clusters change the spatial distribution of holes within the valence subbands and therefore affect the recombination properties. LED based on (1-100) InGaN/GaN MQW were successfully fabricated. Although the light output is still significantly lower compared to devices based on layers deposited along the (0001) orientation, the strong blue emission at a forward voltage of only 4.1 V appears already quite promising. Main challenges for further improvement are the optimization of the upper p-type contact layer and the MQW layer stack.

  4. Physics, MOVPE growth and investigation of m-plane GaN films and InGaN/GaN quantum wells on γ-LiAlO2 substrates

    International Nuclear Information System (INIS)

    Mauder, Christof

    2011-01-01

    excitation levels. For higher indium contents, the peaks become broader and weaker and exhibit a slight wavelength shift at higher intensities. Indium accumulation near defects or surface pits is seen as most likely origin. Higher indium contents on a nm scale are also blamed for the lower degree of polarization of emission compared to literature reports on nonpolar MQW. Indium clusters change the spatial distribution of holes within the valence subbands and therefore affect the recombination properties. LED based on (1-100) InGaN/GaN MQW were successfully fabricated. Although the light output is still significantly lower compared to devices based on layers deposited along the (0001) orientation, the strong blue emission at a forward voltage of only 4.1 V appears already quite promising. Main challenges for further improvement are the optimization of the upper p-type contact layer and the MQW layer stack.

  5. Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

    Energy Technology Data Exchange (ETDEWEB)

    Hospodková, A.; Oswald, J.; Pangrác, J.; Kuldová, K.; Zíková, M.; Vyskočil, J.; Hulicius, E., E-mail: hulicius@fzu.cz

    2016-01-01

    This review paper summarizes some of results achieved during last years of our quantum dot (QD) research. We show that the QD shape (aspect ratio and elongation) significantly influences the QD photoluminescence (PL) spectrum. Magnetophotoluminescence can be used for determination of the anisotropy of QDs. While the calculated shifts in magnetic field of the energies of higher radiative transitions are found to be sensitive to the lateral elongation, the shift of the lowest transition is determined mainly by the exciton effective mass. This behavior can be used for determining both the effective mass and the elongation fairly reliably from the magnetophotoluminescence spectra displaying at least two resolved bands. Lateral shape of InAs/GaAs QDs in vertically correlated structures was also studied. We found the ways to control the QD elongation and consequently the energy difference between PL transitions by adjusting properly the spacer layer thickness. The main goal was to redshift QD PL emission towards telecommunication wavelengths of Metal Organic Vapor Phase Epitaxy prepared InAs/GaAs QDs using InGaAs or GaAsSb covering strain reducing layer (SRL). Our results proved that GaAsSb SRL improves the QD PL properties and the type I or type II band alignment can be controlled by both, GaAsSb composition and QD size. Maintaining the type I heterostructure is important for high luminescence efficiency and emission wavelength stability of QD structure. The simulation of electron structure in InAs QDs covered with GaAsSb SRL and experimental results reveal the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The type II structure of InAs/GaAs QDs covered by GaAsSb SRL with Sb content near 30% enabled us to achieve extremely long emission wavelength at 1.8 µm. The high amount of antimony in the SRL causes the preservation of QD size, and increased QD size prolongs the PL wavelength. The type II heterostructures with

  6. Dependence on the growth direction of the strain in AlGaSb alloys

    Energy Technology Data Exchange (ETDEWEB)

    Rojas-Lopez, M; Delgado-Macuil, R; Gayou, V L; Orduna-Diaz, A [CIBA-Tlaxcala, IPN, Tlaxcala, Tlax. (Mexico); Momox-Beristain, E [FC-BUAP, Puebla, Pue. (Mexico); Salazar-Hernandez, B [CIICAp-UAEM, Cuernavaca, Mor. (Mexico); Rodriguez, A G, E-mail: marlonrl@yahoo.com.m [IICO-UASLP, San Luis Potosi, S.L.P. (Mexico)

    2009-05-01

    High resolution x-ray diffraction profiles were obtained from Al{sub x}Ga{sub 1-x}Sb layers grown on (001) and (111) GaSb substrates. The out of plane lattice parameter, was estimated directly from the symmetrical diffractions for (001) and (111) alloys. These results show that all the layers are strained, and those grown on (001) GaSb are slightly more strained than the corresponding layers grown on (111) GaSb. This difference is explained by the dependence of the strain ratio on growth direction. The out of plane lattice parameter as a function of Al content is higher than the corresponding bulk lattice parameter of Al{sub x}Ga{sub 1-x}Sb layers obtained with Vegard's law. Also, the perpendicular and the in-plane lattice parameter expected for pseudomorphic alloys, was estimated from the strain ratios, assuming an elastic deformation and using the EDX alloy composition to interpolate the elastic constants C{sub ij}. This estimation also shows that almost all the layers are fully strained.

  7. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.

    Science.gov (United States)

    Liao, S Y; Lu, C C; Chang, T; Huang, C F; Cheng, C H; Chang, L B

    2014-08-01

    Compared to AlGaN/GaN HEMT with 0.15 μm T-gate length, the AlInN/AlN/GaN one exhibits much higher current density and transconductance of 1558 mA/mm at Vd = 2 V and 330 mS/mm, respectively. The high extrinsic ft and fmax of 82 GHz and 70 GHz are extracted from AlInN/AlN/GaN HEMT. Besides, we find that the transconductance roll-off is significant in AlGaN/GaN, but largely improved in AlInN/AlN/GaN HEMT, suggesting that the high carrier density and lattice-matched epitaxial heterostructure is important to reach both large RF output power and high operation frequency, especially for an aggressively gate length scaling.

  8. Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

    International Nuclear Information System (INIS)

    Cao, Ruyue; Zhang, Zhaofu; Wang, Changhong; Li, Haobo; Dong, Hong; Liu, Hui; Wang, Weichao; Xie, Xinjian

    2015-01-01

    Understanding of GaN interfacing with GaAs is crucial for GaN to be an effective interfacial layer between high-k oxides and III-V materials with the application in high-mobility metal-oxide-semiconductor field effect transistor (MOSFET) devices. Utilizing first principles calculations, here, we investigate the structural and electronic properties of the GaN/GaAs interface with respect to the interfacial nitrogen contents. The decrease of interfacial N contents leads to more Ga dangling bonds and As-As dimers. At the N-rich limit, the interface with N concentration of 87.5% shows the most stability. Furthermore, a strong band offsets dependence on the interfacial N concentration is also observed. The valance band offset of N7 with hybrid functional calculation is 0.51 eV. The electronic structure analysis shows that significant interface states exist in all the GaN/GaAs models with various N contents, which originate from the interfacial dangling bonds and some unsaturated Ga and N atoms. These large amounts of gap states result in Fermi level pinning and essentially degrade the device performance

  9. Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong; Oehler, Fabrice; Kappers, Menno J.; Oliver, Rachel A., E-mail: rao28@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2015-08-24

    A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.

  10. Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

    International Nuclear Information System (INIS)

    Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong; Oehler, Fabrice; Kappers, Menno J.; Oliver, Rachel A.

    2015-01-01

    A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness

  11. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

    Directory of Open Access Journals (Sweden)

    Nigamananda Samal

    2010-02-01

    Full Text Available An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW on GaAs by molecular beam epitaxy (MBE are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM of ~60 meV in room temperature (RT photoluminescence (PL indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

  12. Hot injection synthesis of Cu(In, Ga)Se2 nanocrystals with tunable bandgap

    Science.gov (United States)

    Latha, M.; Aruna Devi, R.; Velumani, S.

    2018-05-01

    CuIn1-xGaxSe2 nanocrystals (CIGSe NCs) were synthesized with different gallium (Ga) content by the hot injection process at low reaction temperature for the first time. The Ga content [x = Ga(In + Ga)] was varied such as 0, 0.25, 0.50 and 0.75 to study their influences on the structural, morphological, compositional and optical properties of CIGSe NCs. X-ray diffraction (XRD) analysis showed the peak shift towards higher 2θ angle. The lattice parameters a and c were decreased linearly as x value increases which propitiated Vegard's law. Transmission electron microscopy (TEM) analysis revealed a decrease in the particle size from 55 to 22 nm. Ultraviolet-visible-near infrared (UV-vis-NIR) absorption spectra indicated a blue shift towards the lower wavelength and bandgap was tuned from 1.04 to 1.41eV. Apart from this, CIGSe thin films were prepared by doctor blade coating method followed by annealing under Se/Ar atmosphere. The mobility of CIGSe thin film increased whereas resistivity decreased. Moreover, the photoconductivity of CIGSe annealed thin film exhibited almost 2-fold increase under an illumination of light. We realize from these results that the synthesized CIGSe NCs with x = 0.25 is expected to have the important perspective to be efficiently exploited as an absorber layer in cost-effective thin film solar cells.

  13. Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer

    Directory of Open Access Journals (Sweden)

    T. F. Gundogdu

    2014-01-01

    Full Text Available We studied a high indium content (0.8 InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer.

  14. High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing

    International Nuclear Information System (INIS)

    Wang Dongfang; Wei Ke; Yuan Tingting; Liu Xinyu

    2010-01-01

    This paper describes the performance of AlGaN/GaN HEMTs with 2.4 μm source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 μm source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

  15. Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets

    Directory of Open Access Journals (Sweden)

    Yang-Zhe Su

    2018-06-01

    Full Text Available Gallium nitride (GaN is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases. The zinc-blende GaN has superior electronic and optical properties over wurtzite one. In this report, GaN nanodots can be fabricated by Ga metal droplets in ultra-high vacuum and then nitridation by nitrogen plasma. The size, shape, density, and crystal structure of GaN nanodots can be characterized by transmission electron microscopy. The growth parameters, such as pre-nitridation treatment on Si surface, substrate temperature, and plasma nitridation time, affect the crystal structure of GaN nanodots. Higher thermal energy could provide the driving force for the phase transformation of GaN nanodots from zinc-blende to wurtzite structures. Metastable zinc-blende GaN nanodots can be synthesized by the surface modification of Si (111 by nitrogen plasma, i.e., the pre-nitridation treatment is done at a lower growth temperature. This is because the pre-nitridation process can provide a nitrogen-terminal surface for the following Ga droplet formation and a nitrogen-rich condition for the formation of GaN nanodots during droplet epitaxy. The pre-nitridation of Si substrates, the formation of a thin SiNx layer, could inhibit the phase transformation of GaN nanodots from zinc-blende to wurtzite phases. The pre-nitridation treatment also affects the dot size, density, and surface roughness of samples.

  16. Czech Higher Education Still at the Crossroads

    Czech Academy of Sciences Publication Activity Database

    Matějů, Petr; Simonová, Natalie

    Roč.39, č. 3 (2003), s. 393-410 ISSN 0038-0288 R&D Projects: GA AV ČR(CZ) IBS7028302; GA ČR(CZ) GA403/03/0340 Institutional research plan: CEZ:AV0Z7028912 Keywords : higher education * legislation * autonomy of universities Subject RIV: AO - Sociology, Demography Impact factor: 0.063, year: 2003

  17. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    International Nuclear Information System (INIS)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

  18. Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

    Science.gov (United States)

    Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

    2017-08-17

    Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.

  19. Investigating the electrical properties of Si donors in Al{sub x}Ga{sub 1-x}N alloys

    Energy Technology Data Exchange (ETDEWEB)

    James, G.R.; Leitch, A.W.R. [Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Omnes, F. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France)

    2006-06-15

    In this paper a study of the electrical properties of Si-doped Al{sub x}Ga{sub 1-x}N is presented. The Al{sub x}Ga{sub 1-x}N layers, grown using the metalorganic chemical vapour deposition technique, were studied using variable temperature Hall effect and persistent photoconductivity measurements. High quality conducting Al{sub x}Ga{sub 1-x}N layers were obtained for 0{<=}x{<=}0.5, with the mobility decreasing from 215 cm{sup 2}/V s (GaN) to 10 cm{sup 2}/V s (Al{sub 0.51}Ga{sub 0.49}N), at 300 K. The carrier concentration of these layers was typically between 2.5 x 10{sup 18} cm{sup -3} and 7 x 10{sup 17} cm{sup -3} at 300 K. For Al{sub x}Ga{sub 1-x}N layers with 0{<=}x{<=}0.41 the temperature dependence of the carrier concentration between 300 and 15 K could be studied, yielding the Si donor activation energy. The carrier concentrations of higher Al content samples (0.5{<=}x{<=}0.65) could not be accurately measured below 300 K, and thus the Si activation energy was obtained from the temperature dependence of the resistivity. It was found that the Si activation energy escalated with increasing Al content of the layers, and followed the trend predicted for a shallow hydrogen-like donor, up to x=0.65. Illumination of the samples at low temperature with a blue LED showed that the layers exhibit little persistent photoconductivity, further confirmation that Si remains a shallow donor in Al{sub x}Ga{sub 1-x}N. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Czech Higher Education Still at the Crossroads

    Czech Academy of Sciences Publication Activity Database

    Matějů, Petr; Simonová, Natalie

    2003-01-01

    Roč. 39, č. 3 (2003), s. 393-410 ISSN 0038-0288 R&D Projects: GA ČR GA403/03/0340 Institutional research plan: CEZ:AV0Z7028912 Keywords : higher education * autonomy of universities * legislation Subject RIV: AO - Sociology, Demography Impact factor: 0.063, year: 2003

  1. Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

    International Nuclear Information System (INIS)

    Ruppalt, Laura B.; Cleveland, Erin R.; Champlain, James G.; Prokes, Sharka M.; Brad Boos, J.; Park, Doewon; Bennett, Brian R.

    2012-01-01

    In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al 2 O 3 interfaces. Prior to atomic layer deposition of an Al 2 O 3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 °C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbO x , decreased Sb, and increased GaO x content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.

  2. Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate

    Science.gov (United States)

    Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

    2018-04-01

    In this paper, GaN-based yellow light-emitting diodes (LEDs) were homoepitaxially grown on free-standing (0001) GaN substrates by metal-organic chemical vapor deposition. X-ray diffraction (XRD), photoluminescence (PL), and electroluminescence (EL) measurements were conducted to investigate the structural, optical, and electrical properties of the yellow LED. The XRD measurement results showed that the InGaN/GaN multiple quantum wells (MQWs) in the LED structure have good periodicity because the distinct MQWs related higher order satellite peaks can be clearly observed from the profile of 2θ-ω XRD scan. The low temperature (10 K) and room temperature PL measurement results yield an internal quantum efficiency of 16% for the yellow LED. The EL spectra of the yellow LED present well Gaussian distribution with relatively low linewidth (47-55 nm), indicating the homogeneous In-content in the InGaN quantum well layers in the yellow LED structure. It is believed that this work will aid in the future development of GaN on GaN LEDs with long emission wavelength.

  3. Characterization of negative bias-illumination-stress stability for transparent top-gate In-Ga-Zn-O thin-film transistors with variations in the incorporated oxygen content

    Science.gov (United States)

    Kim, Kyeong-Ah; Park, Min-Ji; Lee, Won-Ho; Yoon, Sung-Min

    2015-12-01

    We fabricated fully transparent top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) while varying the oxygen partial pressure (PO2) during IGZO sputtering deposition and characterized the negative-bias-illumination stress (NBIS) stabilities of these devices before and after a post-annealing process. When the PO2 was chosen to be 2% and the device was annealed in oxygen ambient conditions at 200 °C, the field-effect mobility in the saturation region, subthreshold swing, and on/off current ratio were obtained to be approximately 15.3 cm2 V-1 s-1, 0.14 V/dec, and 8.7 × 109, respectively. Conversely, the TFT did not show the transfer characteristics when the PO2 was chosen to be 0% and no annealing process was performed. The shifts in the turn-on voltages (ΔVon) under the NBIS conditions with red, green, and blue lights were investigated for the fabricated IGZO TFTs. The ΔVon followed the stretched-exponential relationship and was found to be closely related to the concentration of oxygen vacancies and oxygen-related defects in the IGZO channel and at the interfaces. The NBIS stabilities were improved by increasing the PO2 and performing the annealing process in oxygen ambient conditions.

  4. Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

    Science.gov (United States)

    Lund, Cory; Hestroffer, Karine; Hatui, Nirupam; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

    2017-11-01

    Smooth relaxed N-polar InGaN films were grown by metal-organic CVD (MOCVD) on N-polar InGaN pseudosubstrates (PSs) using a novel digital approach consisting of a constant In precursor flow with the pulsed injection of H2 carrier gas. InGaN layers grown on PSs exhibited an In composition of about 50% higher than those of the layers grown on N-polar GaN templates, assuming the in-plane lattice constant of the relaxed PSs, corresponding to In0.11Ga0.89N. Additionally, the luminescence recorded from InGaN layers grown on PSs at 490 nm was twice as intense as that obtained from the layers deposited on coloaded GaN-on-sapphire templates, which emitted at 430 nm.

  5. Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhao, De Gang, E-mail: dgzhao@red.semi.ac.cn; Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2015-11-15

    The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed.

  6. Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

    International Nuclear Information System (INIS)

    Liu, Wei; Zhao, De Gang; Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei; Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui

    2015-01-01

    The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed

  7. Atomic Charges and Chemical Bonding in Y-Ga Compounds

    Directory of Open Access Journals (Sweden)

    Yuri Grin

    2018-02-01

    Full Text Available A negative deviation from Vegard rule for the average atomic volume versus yttrium content was found from experimental crystallographic information about the binary compounds of yttrium with gallium. Analysis of the electron density (DFT calculations employing the quantum theory of atoms in molecules revealed an increase in the atomic volumes of both Y and Ga with the increase in yttrium content. The non-linear increase is caused by the strengthening of covalent Y-Ga interactions with stronger participation of genuine penultimate shell electrons (4d electrons of yttrium in the valence region. Summing the calculated individual atomic volumes for a unit cell allows understanding of the experimental trend. With increasing yttrium content, the polarity of the Y-Ga bonding and, thus its ionicity, rises. The covalency of the atomic interactions in Y-Ga compounds is consistent with their delocalization from two-center to multi-center ones.

  8. Thermodynamics of the (Sm{sub 2}Fe{sub 17-x}Ga{sub x}+H{sub 2}) system

    Energy Technology Data Exchange (ETDEWEB)

    Kubis, M.; Handstein, A.; Gebel, B.; Gutfleisch, O.; Mueller, K.H.; Schultz, L. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe

    2000-08-10

    Sm{sub 2}Fe{sub 17-x}Ga{sub x} samples (with x=0, 0.5, 1, and 2) were disproportionated into SmH{sub 2} and {alpha}-(Fe,Ga) by heating the samples in 4 MPa hydrogen up to 650 C. It was possible to disproportionate even the more stable compounds with a higher Ga content under these conditions. The recombination into the original 2:17 phase was carried out by annealing in low hydrogen pressures of 2.5, 12 and 60 kPa. The values of the hydride formation enthalpy, {delta}H, and of the change of entropy, {delta}S, for the Sm{sub 2}Fe{sub 17-x}Ga{sub x} compounds were obtained by using the Van't Hoff relation. It was found that the negative {delta}H increases monotonically from 141 to 229 kJ/mol H{sub 2} and the negative {delta}S increases monotonically from 112 to 258 J/Kmol H{sub 2} for x=0 to x=2, respectively. These results show that the higher stability for the compounds with increasing Ga content is mainly attributed to the increasing negative change of entropy -{delta}S and not, as expected before, to a decrease of -{delta}H. (orig.)

  9. Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

    Science.gov (United States)

    Liang, Yu-Han

    show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.

  10. High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

    International Nuclear Information System (INIS)

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

    2015-01-01

    A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm 2 /(V·s) at sheet charge density of 8.4 × 10 12  cm −2 . Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices

  11. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    International Nuclear Information System (INIS)

    Grady, R; Bayram, C

    2017-01-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga (1−X) N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga (1−X) N/GaN heterojunction is formed through intentional δ -doping part of the Al X Ga (1−X) N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga (1−X) N barrier; δ -doping location (within the Al X Ga (1−X) N barrier), δ-doped Al X Ga (1−X) N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga (1−X) N barrier results in a normally-off behavior whereas Al X Ga (1−X) N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology. (paper)

  12. Impact ionization of excitons in electric field of GaN and quantum wells of GaN/AlGaN

    International Nuclear Information System (INIS)

    Nel'son, D.K.; Yakobson, M.A.; Kagan, V.D.; Gil, B.; Grandjean, N.; Beaumont, B.; Massier, J.; Gibart, P.

    2001-01-01

    The effect of the exciton states impact ionization in the GaN exploit films and in the GaN/AlGaN structures with quantum wells is studied. The study was carried out through the optical method, based on the exciton photoluminescence quenching by applying the electric field. It is established that in the process of the electrons relaxation by energy and pulse the scattering on the admixtures prevails over the scattering on the acoustic phonons. The average length of the hot electrons free run is evaluated. The average length of the hot electrons free run in the GaN/AlGaN wells proved to be by the value order higher than in the GaN epitaxial films, which is conditioned by decrease in the probability of the electrons scattering in the two-dimensional case [ru

  13. Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

    Science.gov (United States)

    Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi

    2017-10-01

    NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm-2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm-3 and the 2 DEG electron density recovered to 9.57 × 1012 cm-2.

  14. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  15. 67Ga lung scan

    International Nuclear Information System (INIS)

    Niden, A.H.; Mishkin, F.S.; Khurana, M.M.L.; Pick, R.

    1977-01-01

    Twenty-three patients with clinical signs of pulmonary embolic disease and lung infiltrates were studied to determine the value of gallium citrate 67 Ga lung scan in differentiating embolic from inflammatory lung disease. In 11 patients without angiographically proved embolism, only seven had corresponding ventilation-perfusion defects compatible with inflammatory disease. In seven of these 11 patients, the 67 Ga concentration indicated inflammatory disease. In the 12 patients with angiographically proved embolic disease, six had corresponding ventilation-perfusion defects compatible with inflammatory disease. None had an accumulation of 67 Ga in the area of pulmonary infiltrate. Thus, ventilation-perfusion lung scans are of limited value when lung infiltrates are present. In contrast, the accumulation of 67 Ga in the lung indicates an inflammatory process. Gallium imaging can help select those patients with lung infiltrates who need angiography

  16. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

    Science.gov (United States)

    Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

    2017-12-01

    Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

  17. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    Science.gov (United States)

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-03-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

  18. Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells

    Science.gov (United States)

    Kunrugsa, Maetee

    2018-06-01

    Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar cell are investigated. The solar cell is designed as a p-i-n GaAs structure where a single layer of GaAsSb QDs is introduced into the intrinsic region. The current density–voltage characteristics of QD solar cells are derived from Poisson’s equation, continuity equations, and the drift-diffusion transport equations, which are numerically solved by a finite element method. Furthermore, the transition energy of a single GaAsSb QD and its corresponding wavelength for each As mole fraction are calculated by a six-band k · p model to validate the position of the absorption edge in the external quantum efficiency curve. A GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4 provides the best power conversion efficiency. The overlap between electron and hole wave functions becomes larger as the As mole fraction increases, leading to a higher optical absorption probability which is confirmed by the enhanced photogeneration rates within and around the QDs. However, further increasing the As mole fraction results in a reduction in the efficiency because the absorption edge moves towards shorter wavelengths, lowering the short-circuit current density. The influences of the QD size and density on the efficiency are also examined. For the GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4, the efficiency can be improved to 26.2% by utilizing the optimum QD size and density. A decrease in the efficiency is observed at high QD densities, which is attributed to the increased carrier recombination and strain-modified band structures affecting the absorption edges.

  19. Thermoanalytical investigation of the hydrogen absorption behaviour of Sm{sub 2}Fe{sub 17-x}Ga{sub x} at high hydrogen pressures

    Energy Technology Data Exchange (ETDEWEB)

    Handstein, A.; Kubis, M.; Gebel, B.; Mueller, K.-H.; Schultz, L. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe; Gutfleisch, O.; Harris, I.R. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe]|[Birmingham Univ. (United Kingdom). School of Metallurgy and Materials

    1998-07-01

    The complete disproportionation of Sm{sub 2}Fe{sub 17-x}Ga{sub x} during annealing in hydrogen is hindered due to an increased stability of the compounds with a higher Ga content (x {>=} 1). Therefore the HD process as the first step of HDDR (hydrogenation-disproportionation-desorption-recombination) has to be carried out at a high hydrogen pressure for x {>=} 1. The hydrogen absorption behaviour of Sm{sub 2}Fe{sub 17-x}Ga{sub x} (x = 0, 0.5, 1 and 2) was investigated by means of hydrogen differential thermal analysis (HDTA) and high pressure differential scanning calorimetry (HPDSC) at hydrogen pressures up to 70 bar. A dependency of hydrogenation and disproportionation temperatures on hydrogen pressure and Ga content was found. The comparison with other substituents (M = Al and Si) instead of M = Ga showed an increased stability of Sm{sub 2}Fe{sub 17-x}M{sub x} compounds against disproportionation by hydrogen in the sequence Al, Ga and Si. The Curie temperatures of the interstitially hydrogenated Th{sub 2}Zn{sub 17}-type materials increase with the hydrogen pressure. In order to produce coercive and thermally stable Sm{sub 2}Fe{sub 15}Ga{sub 2}C{sub y} powder by means of the HDDR process, we recombined material disproportionated at different hydrogen pressures. Preliminary results of magnetic properties of this HDDR treated and gas-carburized Sm{sub 2}Fe{sub 15}Ga{sub 2}C{sub y} are discussed. (orig.)

  20. Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin' an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying; Xu, Shengrui; Hao, Yue [State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-04-28

    Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A and 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.

  1. Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

    Directory of Open Access Journals (Sweden)

    James (Zi-Jian Ju

    2016-04-01

    Full Text Available The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga < 0.2 yields a more than 10-fold reduction in thermal conductivity (κ without deteriorating electrical conductivity (σ, while the Seebeck coefficient (S increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga = 0.1 with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K, and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.

  2. Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots

    Science.gov (United States)

    Tile, Ngcali; Ahia, Chinedu C.; Olivier, Jaco; Botha, Johannes Reinhardt

    2018-04-01

    This study focuses on the growth of GaSb/GaAs quantum dots (QD) using an atmospheric pressure MOVPE system. For the best uncapped dots, the average dot height, base diameter and density are 5 nm, 45 nm and 4.5×1010 cm-2, respectively. Capping of GaSb QDs at high temperatures caused flattening and formation of thin inhomogeneous GaSb layer inside GaAs resulting in no obvious QD PL peak. Capping at low temperatures lead to the formation of dot-like features and a wetting layer (WL) with distinct PL peaks for QD and WL at 1097 nm and 983 nm respectively. Some of the dot-like features had voids. An increase in excitation power caused the QD and WL peaks to shift to higher energies. This is attributed to electrostatic band bending leading to triangular potential wells, typical of type-II alignment between GaAs and strained GaSb. Variable temperature PL measurements of the QD sample showed the decrease in the intensity of the WL peak to be faster than that of the QD peak as the temperature increased.

  3. GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.

    Science.gov (United States)

    Ansari, Azadeh; Liu, Che-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; Ku, Pei-Cheng; Rais-Zadeh, Mina

    2015-03-17

    This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient ( d 33 ) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF₂) etch and therefore eliminating the need for backside lithography and etching.

  4. GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

    International Nuclear Information System (INIS)

    Klem, J. F.; Blum, O.; Kurtz, S. R.; Fritz, I. J.; Choquette, K. D.

    2000-01-01

    We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum-well structures grown by molecular-beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 μm. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb versus GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in nonideal interfaces under certain growth conditions. At low-injection currents, double-heterostructure lasers with GaAsSb/InGaAs bilayer quantum-well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities of 120 A/cm2 at 1.17 μm, and 2.1 kA/cm2 at 1.21 μm. (c) 2000 American Vacuum Society

  5. P-type doping of GaN

    International Nuclear Information System (INIS)

    Wong, R.K.

    2000-01-01

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover

  6. P-type doping of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Raechelle Kimberly [Univ. of California, Berkeley, CA (United States)

    2000-04-01

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

  7. Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED

    KAUST Repository

    Mishra, Pawan; Ng, Tien Khee; Janjua, Bilal; Shen, Chao; Eid, Jessica; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2014-01-01

    We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ∼20 times higher injection levels (∼275 A/cm2) compared to a conventional step-MQWs microLED (∼14 A/cm2).

  8. Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED

    KAUST Repository

    Mishra, Pawan

    2014-12-01

    We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ∼20 times higher injection levels (∼275 A/cm2) compared to a conventional step-MQWs microLED (∼14 A/cm2).

  9. Higher Education

    African Journals Online (AJOL)

    Kunle Amuwo: Higher Education Transformation: A Paradigm Shilt in South Africa? ... ty of such skills, especially at the middle management levels within the higher ... istics and virtues of differentiation and diversity. .... may be forced to close shop for lack of capacity to attract ..... necessarily lead to racial and gender equity,.

  10. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang; Li, Guoqiang

    2014-01-01

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In x Ga 1−x As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In x Ga 1−x As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In x Ga 1−x As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In x Ga 1−x As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In x Ga 1−x As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In x Ga 1−x As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates

  11. AlGaN/GaN double-channel HEMT

    International Nuclear Information System (INIS)

    Quan Si; Hao Yue; Ma Xiaohua; Zheng Pengtian; Xie Yuanbin

    2010-01-01

    The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. (semiconductor devices)

  12. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

    Energy Technology Data Exchange (ETDEWEB)

    Robert, C., E-mail: cedric.robert@insa.rennes.fr [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Thanh, T. Nguyen; Létoublon, A.; Perrin, M.; Cornet, C.; Levallois, C.; Jancu, J.M.; Even, J. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France); Balocchi, A.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse (France); Durand, O.; Le Corre, A. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France)

    2013-08-31

    AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments. - Highlights: ► An active zone is proposed for a pseudomorphic laser structure on Si. ► Cladding layers are proposed for a pseudomorphic laser structure on Si. ► The AlGaP alloy is studied by X-ray diffraction and spectroscopic ellipsometry. ► InGaAs/GaP quantum dots are studied by scanning tunnelling microscopy. ► InGaAs/GaP quantum dots are studied by time-resolved photoluminescence.

  13. Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

    International Nuclear Information System (INIS)

    Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

    2010-01-01

    A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. GaAsP on GaP top solar cells

    Science.gov (United States)

    Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

    1985-01-01

    GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

  15. Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

    International Nuclear Information System (INIS)

    Beeler, M.; Bellet-Amalric, E.; Monroy, E.; Bougerol, C.

    2014-01-01

    THz intersubband transitions are reported down to 160 μm within AlGaN/GaN heterostructures following a 4-layer quantum well design. In such a geometry, the compensation of the polarization-induced internal electric field is obtained through creating a gradual increase in polarization field throughout the quantum “trough” generated by three low-Al-content layers. The intersubband transitions show tunable absorption with respect to doping level as well as geometrical variations which can be regulated from 53 to 160 μm. They also exhibit tunnel-friendly designs which can be easily integrated into existing intersubband device architectures.

  16. Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

    Science.gov (United States)

    Segura, J.; Garro, N.; Cantarero, A.; Miguel-Sánchez, J.; Guzmán, A.; Hierro, A.

    2007-04-01

    We investigate the effects of electron and hole localization in the emission of a GaInNAs/GaAs single quantum well at low temperatures. Photoluminescence measurements varying the excitation density and under magnetic fields up to 14 T have been carried out. The results indicate that electrons are strongly localized in these systems due to small fluctuations in the nitrogen content of the quaternary alloy. The low linear diamagnetic shift of the emission points out the weakness of the Coulomb correlation between electrons and holes and suggests an additional partial localization of the holes.

  17. Higher Education

    Science.gov (United States)

    & Development (LDRD) National Security Education Center (NSEC) Office of Science Programs Richard P Databases National Security Education Center (NSEC) Center for Nonlinear Studies Engineering Institute Scholarships STEM Education Programs Teachers (K-12) Students (K-12) Higher Education Regional Education

  18. Aplicação foliar de cálcio em pessegueiro na Serra Gaúcha: avaliação do teor de nutrientes na folha, no fruto e produção Foliar application of calcium in peach in Serra Gaúcha: evaluation of content of nutrients in the leaf, fruit and yield

    Directory of Open Access Journals (Sweden)

    Gustavo Brunetto

    2008-06-01

    calcium in Peach tree in the Southern Brasil is used during productive cycle, without any information about calcium content and other nutrients in the leaves, fruits and yield. Two experiments were carried out in 2003/2004 to evaluate the effect of foliar application of different sources of calcium in its content and other nutrients in the leaf, fruit and yield of peach trees, Chimarrita cultivar, at an Haplumbrept soil in Southern Brazil, Pinto Bandeira city. The treatments in the experiment 1 were three foliar applications of calcium chloride, concentrations 0 (water, 0.5, 1.0 and 2.0%.Experiment 2 were three foliar applications of calcium nitrate, concentrations 0 (water, 0.5, 1.0 and 2.0%. A randomized block experimental design was used with three replications and three plants for treatment. Leaves were collected, oven-dried and analyzed total calcium, nitrogen, potassium and magnesium. In the maturation, fruits were collected and determined the mass, yield and total content of calcium, nitrogen, potassium and magnesium. The results showed that foliar applications of calcium in the form of chloride and nitrate in peach tree, increase calcium content in the leaves, but did not affect the content of nitrogen, potassium and magnesium in the leaves, content of calcium, nitrogen, potassium and magnesium in the fruit and yield.

  19. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Koleske, D. D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Fischer, A. J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Bryant, B. N. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Kotula, P. G. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Wierer, J. J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-01-07

    InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530–590 nm. The AlzGa1-zN (z~0.38) IL is ~1–2 nm thick, and is grown after and at the same growth temperature as the ~3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ~10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to~0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is also explored, along with implications to conventional longer wavelength emitters.

  20. Does GaH5 exist?

    Science.gov (United States)

    Speakman, Lucas D.; Turney, Justin M.; Schaefer, Henry F.

    2005-11-01

    The existence or nonexistence of GaH5 has been widely discussed [N. M. Mitzel, Angew. Chem. Int. Ed. 42, 3856 (2003)]. Seven possible structures for gallium pentahydride have been systematically investigated using ab initio electronic structure theory. Structures and vibrational frequencies have been determined employing self-consistent field, coupled cluster including all single and double excitations (CCSD), and CCSD with perturbative triples levels of theory, with at least three correlation-consistent polarized-valence-(cc-pVXZ and aug-cc-pVXZ) type basis sets. The X˜A'1 state for GaH5 is predicted to be weakly bound complex 1 between gallane and molecular hydrogen, with Cs symmetry. The dissociation energy corresponding to GaH5→GaH3+H2 is predicted to be De=2.05kcalmol-1. The H-H stretching fundamental is predicted to be v =4060cm-1, compared to the tentatively assigned experimental feature of Wang and Andrews [J. Phys. Chem. A 107, 11371 (2003)] at 4087cm-1. A second Cs structure 2 with nearly equal energy is predicted to be a transition state, corresponding to a 90° rotation of the H2 bond. Thus the rotation of the hydrogen molecule is essentially free. However, hydrogen scrambling through the C2v structure 3 seems unlikely, as the activation barrier for scrambling is at least 30kcalmol-1 higher in energy than that for the dissociation of GaH5 to GaH3 and H2. Two additional structures consisting of GaH3 with a dihydrogen bond perpendicular to gallane (C3v structure 4) and an in-plane dihydrogen bond [Cs(III) structure 5] were also examined. A C3v symmetry second-order saddle point has nearly the same energy as the GaH3+H2 dissociation limit, while the Cs(III) structure 5 is a transition structure to the C3v structure. The C4v structure 6 and the D3h structure 7 are much higher in energy than GaH3+H2 by 88 and 103kcalmol-1, respectively.

  1. Schottky contacts to polar and nonpolar n-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hogyoung [Hanbat National University, Daejeon (Korea, Republic of); Phark, Soohyon [Max-Planck-Institut fur Mikrostrukturphysik, Halle (Germany); Song, Keunman [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of); Kim, Dongwook [Ewha Woman' s University, Seoul (Korea, Republic of)

    2012-01-15

    Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

  2. Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission

    International Nuclear Information System (INIS)

    Liang, Y Y; Yoon, S F; Loke, W K; Ngo, C Y; Fitzgerald, E A

    2012-01-01

    GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is promising to integrate the InAs/InGaAs/GaAs QDs on Si with the use of germanium-on-insulator-on-silicon (GeOI) substrates, reported results exhibit bimodal QD sizes and double emission peaks, i.e. unsatisfactory for realistic applications. In this paper, we showed that with an optimized GaAs buffer, single-peak 1.33 µm room-temperature emission can be obtained from InAs/InGaAs/GaAs QDs on GeOI substrates. (paper)

  3. Performance analysis of high efficiency InxGa1-xN/GaN intermediate band quantum dot solar cells

    Science.gov (United States)

    Chowdhury, Injamam Ul Islam; Sarker, Jith; Shifat, A. S. M. Zadid; Shuvro, Rezoan A.; Mitul, Abu Farzan

    2018-06-01

    In this subsistent fifth generation era, InxGa1-xN/GaN based materials have played an imperious role and become promising contestant in the modernistic fabrication technology because of some of their noteworthy attributes. On our way of illustrating the performance, the structure of InxGa1-xN/GaN quantum dot (QD) intermediate band solar cell (IBSC) is investigated by solving the Schrödinger equation in light of the Kronig-Penney model. In comparison with p-n homojunction and heterojunction solar cells, InxGa1-xN/GaN IBQD solar cell manifests larger power conversion efficiency (PCE). PCE strongly depends on position and width of the intermediate bands (IB). Position of IBs can be controlled by tuning the size of QDs and the Indium content of InxGa1-xN whereas, width of IB can be controlled by tuning the interdot distance. PCE can also be controlled by tuning the position of fermi energy bands as well as changing the doping concentration. In this work, maximum conversion efficiency is found approximately 63.2% for a certain QD size, interdot distance, Indium content and doping concentration.

  4. Characterization of self-organized InGaN/GaN quantum dots by Diffraction Anomalous Fine Structure (DAFS)

    International Nuclear Information System (INIS)

    Piskorska, E.; Holy, V.; Siebert, M.; Schmidt, Th.; Falta, J.; Yamaguchi, T.; Hommel, D.; Renevier, H.

    2006-01-01

    The local chemical composition of InGaN quantum dots grown by a MBE method on GaN virtual substrates was investigated by x-ray diffraction anomalous fine-structure method. From the detailed numerical analysis of the data we were able to reconstruct the local neighborhood of Ga atoms at different positions in the dots. Using this approach, we found that the In content increases from 20% at the dot base to 40-50% at the top. (author) [pl

  5. Growth of self-assembled (Ga)InAs/GaAs quantum dots and realization of high quality microcavities for experiments in the field of strong exciton photon coupling; Selbstorganisiertes Wachstum von (Ga)InAs/GaAs-Quantenpunkten und Entwicklung von Mikroresonatoren hoechster Guete fuer Experimente zur starken Exziton-Photon-Kopplung

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, Andreas

    2008-11-05

    At the beginning, we improved the three dimensional optical confinement of the micropillars. The quality factor of the pillars could be increased by the use of higher reflectivity mirrors and a matched V/III ratio for the different epitaxial layers. Hence, a record quality factor of about 90000 was achieved for an active micropillar with 26 (30) mirror pairs in the top (bottom) DBR and a diameter of 4 {mu}m. In parallel to this, we made studies on the growth of self-assembled GaInAs quantum dots on GaAs substrates. Here, the nucleation of three dimensional islands as well as their optical properties were object of the investigation. The morphological properties of the dots were analyzed by transmission and scanning electron microscopy, and the optical properties were investigated by photoluminescence and photoreflectance measurements. The optical and particularly the morphological properties of the self-assembled GaInAs quantum dots were essentially improved. Due to a low strain nucleation layer with an indium content of 30 %, the dot density could be reduced to 6-9 x 10{sup 9} cm{sup -2} and their geometric dimensions were increased to typical lengths between 50 and 100 nm and widths of about 30 nm. The lattice mismatch between the quantum dots and the surrounding matrix is decreased due to the reduced indium content. The minimized strain during the dot growth leads to an enhanced migration length of the deposited atoms on the surface. Finally, the obtained findings of the MBE growth of microcavities, their fabrication and the self-assembled island growth of GaInAs on GaAs were used for the realization of further samples. Low strain GaInAs quantum dots were embedded into the microresonators. These structures allowed for the first time the observation of strong coupling between light and matter in a semiconductor. In case of the low strain quantum dots with enlarged dimensions in the strong coupling regime, a vacuum Rabi-splitting of about 140 {mu}eV between the

  6. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-15

    This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  7. Iron clustering in GaSe epilayers grown on GaAs(111)B

    International Nuclear Information System (INIS)

    Moraes, A R de; Mosca, D H; Mattoso, N; Guimaraes, J L; Klein, J J; Schreiner, W H; Souza, P E N de; Oliveira, A J A de; Vasconcellos, M A Z de; Demaille, D; Eddrief, M; Etgens, V H

    2006-01-01

    In this paper we report on the structural, morphological and magnetic properties of semiconducting GaSe epilayers, grown by molecular beam epitaxy, doped to different iron contents (ranging from 1 to 22 at.% Fe). Our results indicate that iron forms metallic Fe nanoparticles with diameters ranging from 1 to 20 nm embedded in the crystalline GaSe matrix. The Fe incorporation proceeds by segregation and agglomeration and induces a progressive disruption of the lamellar GaSe epilayers. The magnetization as a function of the temperature for zero-field cooling with the magnetic field parallel to the surface of the sample provides evidence of superparamagnetic behaviour of the nanoparticles. Cathodoluminescence experiments performed at room temperature reveal semiconducting behaviour even for samples with Fe concentrations as high as 20 at.%

  8. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    International Nuclear Information System (INIS)

    Wagener, Viera; Olivier, E.J.; Botha, J.R.

    2009-01-01

    This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  9. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

    Science.gov (United States)

    Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

    2017-07-21

    The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

  10. 2015 Lowndes County (GA) Lidar

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — TASK NAME: NOAA OCM Lidar for Lowndes County, GA with the option to Collect Lidar in Cook and Tift Counties, GA Lidar Data Acquisition and Processing Production Task...

  11. Transmission electron microscopy of defects and internal fields in GaN structures

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, H

    2001-07-01

    The main aim of this study was to understand the microstructure of GaN and InGaN/GaN and to examine electric fields around the defects, and across the quantum wells by electron holography. For this reason different types of GaN and InGaN/GaN samples have been prepared and studied. Conventional transmission electron microscopy has been used for structural study of two MBE grown GaN/GaAs samples, grown at room temperature and at 340 deg C. The structure of the samples were found to be hexagonal polycrystalline in an amorphous GaN matrix, and textured hexagonal polycrystalline material respectively. The experimental results indicate that the higher growth temperature results in a more crystalline material with a higher density of bigger grain sizes. Different types of undoped and Si doped GaN/Sapphire samples were studied, with respect to the defect structure in GaN films. GaN was found to be a highly defective material with a dislocation density of 10{sup 9}/cm{sup 2}. The majority of the dislocations are edge dislocations. It has been found that nanopipes are open core screw dislocations, and the population and size of the nanopipes is proportional to the Si doping concentration. Dislocation structures were found to depend on the Si doping level in the material, with higher Si doping giving a lower density of dislocations with a more random distribution. In addition some EELS, EDX and HRTEM have been performed on the nanopipes and dislocations in order to investigate Si segregation in the defects. In MBE grown GaN/In{sub 0.1}Ga{sub 0.9}N/GaN SQWs and MQWs, V shaped defects were found to be present in the InGaN regions, which locally reduced the width of the InGaN layers. (author)

  12. Transmission electron microscopy of defects and internal fields in GaN structures

    International Nuclear Information System (INIS)

    Mokhtari, H.

    2001-07-01

    The main aim of this study was to understand the microstructure of GaN and InGaN/GaN and to examine electric fields around the defects, and across the quantum wells by electron holography. For this reason different types of GaN and InGaN/GaN samples have been prepared and studied. Conventional transmission electron microscopy has been used for structural study of two MBE grown GaN/GaAs samples, grown at room temperature and at 340 deg C. The structure of the samples were found to be hexagonal polycrystalline in an amorphous GaN matrix, and textured hexagonal polycrystalline material respectively. The experimental results indicate that the higher growth temperature results in a more crystalline material with a higher density of bigger grain sizes. Different types of undoped and Si doped GaN/Sapphire samples were studied, with respect to the defect structure in GaN films. GaN was found to be a highly defective material with a dislocation density of 10 9 /cm 2 . The majority of the dislocations are edge dislocations. It has been found that nanopipes are open core screw dislocations, and the population and size of the nanopipes is proportional to the Si doping concentration. Dislocation structures were found to depend on the Si doping level in the material, with higher Si doping giving a lower density of dislocations with a more random distribution. In addition some EELS, EDX and HRTEM have been performed on the nanopipes and dislocations in order to investigate Si segregation in the defects. In MBE grown GaN/In 0.1 Ga 0.9 N/GaN SQWs and MQWs, V shaped defects were found to be present in the InGaN regions, which locally reduced the width of the InGaN layers. (author)

  13. Higher Education.

    Science.gov (United States)

    Hendrickson, Robert M.

    This chapter reports 1982 cases involving aspects of higher education. Interesting cases noted dealt with the federal government's authority to regulate state employees' retirement and raised the questions of whether Title IX covers employment, whether financial aid makes a college a program under Title IX, and whether sex segregated mortality…

  14. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kasanaboina, Pavan Kumar [Department of Electrical and Computer Engineering, North Carolina A& T State University, Greensboro, North Carolina 27411 (United States); Ahmad, Estiak [Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA& T State University, Greensboro, North Carolina 27401 (United States); Li, Jia; Iyer, Shanthi [Department of Electrical and Computer Engineering, North Carolina A& T State University, Greensboro, North Carolina 27411 (United States); Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA& T State University, Greensboro, North Carolina 27401 (United States); Reynolds, C. Lewis; Liu, Yang [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  15. Higher spins and matter interacting in dimension three

    Czech Academy of Sciences Publication Activity Database

    Kessel, P.; Lucena Gómez, Gustavo; Skvortsov, E.; Taronna, M.

    2015-01-01

    Roč. 2015, č. 11 (2015), s. 104 ISSN 1029-8479 R&D Projects: GA ČR(CZ) GA14-31689S Institutional support: RVO:68378271 Keywords : Higher Spin Gravity * Higher Spin Symmetry * AdS-CFT correspondence * Chern-Simons Theories Subject RIV: BD - Theory of Information Impact factor: 6.023, year: 2015

  16. Mg doping of GaN by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lieten, R R; Buchowicz, G; Dubon, O; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Borghs, G

    2011-01-01

    We present a systematic study on the influence of growth conditions on the incorporation and activation of Mg in GaN layers grown by plasma-assisted molecular beam epitaxy. We show that high quality p-type GaN layers can be obtained on GaN-on-silicon templates. The Mg incorporation and the electrical properties have been investigated as a function of growth temperature, Ga : N flux ratio and Mg : Ga flux ratio. It was found that the incorporation of Mg and the electrical properties are highly sensitive to the Ga : N flux ratio. The highest hole mobility and lowest resistivity were achieved for slightly Ga-rich conditions. In addition to an optimal Ga : N ratio, an optimum Mg : Ga flux ratio was also observed at around 1%. We observed a clear Mg flux window for p-type doping of GaN : 0.31% 17 cm -3 and a mobility of 15 cm 2 V -1 s -1 . Temperature-dependent Hall effect measurements indicate an acceptor depth in these samples of 100 meV for a hole concentration of 5.5 x 10 17 cm -3 . The corresponding Mg concentration is 5 x 10 19 cm -3 , indicating approximately 1% activation at room temperature. In addition to continuous growth of Mg-doped GaN layers we also investigated different modulated growth procedures. We show that a modulated growth procedure has only limited influence on Mg doping at a growth temperature of 800 deg. or higher. This result is thus in contrast to previously reported GaN : Mg doping at much lower growth temperatures of 500 deg. C.

  17. GaN Based Electronics And Their Applications

    Science.gov (United States)

    Ren, Fan

    2002-03-01

    The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

  18. Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar (10\\bar{1}1) core-shell triangular nanostripe GaN/InGaN LEDs

    Science.gov (United States)

    Okur, Serdal; Rishinaramangalam, Ashwin K.; Mishkat-Ul-Masabih, Saadat; Nami, Mohsen; Liu, Sheng; Brener, Igal; Brueck, Steven R. J.; Feezell, Daniel F.

    2018-06-01

    We investigate the spectrally resolved internal quantum efficiency (IQE) and carrier dynamics in semipolar (10\\bar{1}1) core–shell triangular nanostripe light-emitting diodes (TLEDs) using temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) at various excitation energy densities. Using electroluminescence, photoluminescence, and cathodoluminescence measurements, we verify the origins of the broad emission spectra from the nanostructures and confirm that localized regions of high-indium-content InGaN exist along the apex of the nanostructures. Spectrally resolved IQE measurements are then performed, with the spectra integrated from 400–450 nm and 450–500 nm to obtain the IQE of the QWs mainly near the sidewalls and apex of the TLEDs, respectively. TDPL and TRPL are used to decouple the radiative and non-radiative carrier lifetimes for different regions of the emission spectra. We observe that the IQE is higher for the spectral region between 450 nm and 500 nm compared to the IQE between 400 and 450 nm. This result is in contrast to the typical observation that the IQE of planar GaN-based LEDs is lower for longer wavelengths (i.e., higher indium contents). We also observe a longer non-radiative recombination lifetime for the longer wavelength portion of the spectrum. Several explanations are proposed for the improved IQE and longer non-radiative lifetime observed near the apex of the nanostructures. The results show that nanostructures may be leveraged to design more efficient green LEDs, potentially addressing a long-standing challenge in GaN-based materials.

  19. High-capacity, high-strength trailer designs for the GA-4/GA-9 casks

    International Nuclear Information System (INIS)

    Rickard, N.D.; Kissinger, J.A.; Taylor, C.; Zimmer, A.

    1991-01-01

    General Atomics (GA) is developing final designs for two dedicated legal-weight trailers to transport the GA-4 and GA-9 Spent-Fuel Casks. The basic designs for these high-capacity, high-strength trailers are essentially identical except for small modifications to account for the differences in cask geometry. The authors are designing both trailers to carry a 55,000 lb (24,900 kg) payload and to withstand a 2.5 g vertical design load. The GA-4 and GA-9 trailers are designed for significantly higher loads than are typical commercial semitrailers, which are designed to loads in the range of 1.7 to 2.0 g. To meet the federal gross vehicle weight limit for legal-weight trucks, GA has set a target design weight for the trailers of 9000 lb (4080 kg). This weight includes the personnel barrier, cask tiedowns, and impact limiter removal and storage system. Based on the preliminary trailer designs, the final design weight will to be very close to this target weight

  20. High-capacity, high-strength trailer designs for the GA-4/GA-9 Casks

    International Nuclear Information System (INIS)

    Kissinger, J.A.; Rickard, N.D.; Taylor, C.; Zimmer, A.

    1991-01-01

    General Atomics (GA) is developing final designs for two dedicated legal-weight trailers to transport the GA-4 and GA-9 Spent-Fuel Casks. The basic designs for these high-capacity, high-strength trailers are essentially identical except for small modifications to account for the differences in cask geometry. We are designing both trailers to carry a 55,000 lb (24,900 kg) payload and to withstand a 2.5 g vertical design load. The GA-4 and GA-9 trailers are designed for significantly higher loads than are typical commercial semitrailers, which are designed to loads in the range of 1.7 to 2.0 g. To meet the federal gross vehicle weight limit for legal-weight trucks, GA has set a target design weight for the trailers of 9000 lb (4080 kg). This weight includes the personnel barrier, cask tiedowns, and impact limiter removal and storage system. Based on the preliminary trailer designs, the final design weight is expected to be very close to this target weight. 3 refs., 3 figs

  1. Comparison of dynamic changes in endogenous hormone level, water content and water-soluble sugars in camellia oleifera of different ages

    International Nuclear Information System (INIS)

    Hu, J.; Shah, F.A.; Fu, S.; Wu, W.

    2017-01-01

    The aim of this study is to investigate and understand the dynamic changes and the possible functions of hormones, water and sugar content during the development of C. oleifera. We analyzed and compared WWC, WSS and five endogenous hormones (DHZR, ZR, GA, IAA and ABA) contents between May and August in C. oleifera plants at different ages from the same orchard. The results showed that WWC, WSS, DHZR, ZR, GA, IAA and ABA contents varied from 61.64%-74.15%, 21.24mg/g-62.44mg/g, 6.237ng/g-38.342ng/g, 6.215ng/g-16.721ng/g, 5.668ng/g-18.024ng/g, 24.753ng/g-147.507ng/g and 66.541ng/g-156.212ng/g, respectively. WWC showed a decrease-increase-decrease variation pattern, while the WSS contents demonstrated a generally increasing trend with increasing tree age. The levels of ABA in leaves sampled in August was higher than that in May, but the opposite was found for the GA and IAA levels. Tree ages were negatively correlated with ZR and GA concentration at the 1% or 5% significance level. The results of this study broaden our understanding of the interrelationships between phytohormones, WWC, and WSS content in the growth and development of C. oleifera. (author)

  2. Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

    KAUST Repository

    Al-Jabr, Ahmad; Majid, Mohammed Abdul; Shen, Chao; Ng, Tien Khee; Ooi, Boon S.

    2016-01-01

    We increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing

  3. Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction

    Science.gov (United States)

    Abbasian, Sobhan; Sabbaghi-Nadooshan, Reza

    2018-03-01

    The operation of hetero In0.49Ga0.51P-Al0.7Ga0.3As tunnel diodes has been evaluated, and an approach for optimizing the back surface field (BSF) layer of a InGaP/GaAs dual-junction (DJ) solar cell developed. The results show that the hetero In0.49Ga0.51P-Al0.7Ga0.3As tunnel diode transferred more electrons and holes and showed less recombination between the top and bottom cells with increased efficiency (η) in the InGaP/GaAs DJ solar cell. To achieve higher open-circuit voltage (V oc), GaAs semiconductor was investigated to match with Al0.52In0.48P with bandgap of 2.4 eV, and replacement of the bottom cell in the InGaP/GaAs DJ solar cell with such an Al0.52In0.48P-GaAs heterojunction increased the photogeneration in this region. In the next step, addition of a BSF layer to the top cell required two BSF layers in the bottom cell to optimize the short-circuit current (J sc) and η. The thickness and doping of the BSF layers were increased to obtain the highest η for the cell. The proposed structure was then compared with previous works. The proposed structure yielded V oc = 2.46 V, J sc = 30 mA/cm2, fill factor (FF) = 88.61%, and η = 65.51% under AM1.5 (1 sun) illumination.

  4. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  5. Resonant Raman characterization of InAlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Cros, A.; Cantarero, A.; Pelekanos, N.T.; Georgakilas, A.; Pomeroy, J.; Kuball, M.

    2006-01-01

    InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In x Al y Ga 1-x-y N. It is shown that the addition of In to the Al y Ga 1-y N alloy diminishes considerably the vibration energy of the A 1 (LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In x Al y Ga 1-x-y N layer. The nature of this shift is discussed in relation with intrinsic and extrinsic inhomogeneities in the quaternary alloy. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Resonant Raman characterization of InAlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Cros, A.; Cantarero, A. [Institut de Ciencia dels Materials, Universitat de Valencia, 46071 Valencia (Spain); Pelekanos, N.T.; Georgakilas, A. [Microelectronics Research Group, FORTH/IESL and University of Crete, P.O. Box 1527, 71110 Heraklion, Crete (Greece); Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2006-06-15

    InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In{sub x}Al{sub y}Ga{sub 1-x-y}N. It is shown that the addition of In to the Al{sub y}Ga{sub 1-y}N alloy diminishes considerably the vibration energy of the A{sub 1}(LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In{sub x}Al{sub y}Ga{sub 1-x-y}N layer. The nature of this shift is discussed in relation with intrinsic and extrinsic inhomogeneities in the quaternary alloy. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

    International Nuclear Information System (INIS)

    Moldavskaya, L. D.; Vostokov, N. V.; Gaponova, D. M.; Danil'tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Shashkin, V. I.

    2008-01-01

    A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 μm at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 x 10 9 cm Hz 1/2 W -1

  8. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

    Science.gov (United States)

    Chang, Tzu-Hsuan; Xiong, Kanglin; Park, Sung Hyun; Yuan, Ge; Ma, Zhenqiang; Han, Jung

    2017-07-25

    Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO 2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

  9. Ti on GaAs(110)

    International Nuclear Information System (INIS)

    McCants, C.E.; Kendelewicz, T.; Williams, M.D.; List, R.S.; Lindau, I.; Spicer, W.E.

    1985-01-01

    The chemical and electronic properties of the Ti:GaAs interface have been studied using soft x-ray and ultraviolet photoemission spectroscopies. The Fermi level pinning position is observed to be 0.7 eV for n-type, consistent with both the Unified Defect Model and the charge transfer effects observed by Williams et. al. The interface is quite disrupted, as evidenced by shifts in both the Ga and As 3d core levels and marked changes in their lineshapes. The Ga core level moves to higher kinetic energy and shifts to a metallic-like state with increasing Ti coverages. The As core level also shifts to higher KE; in addition, as appears to diffuse through the Ti overlayer for thin (<10 monolayers) coverage. This, in addition to a change in the intensity ratio between the As 3d/sub 5/2/ and 3d/sub 3/2/ peaks suggests the formation of a Ti-arsenide, which is predicted by bulk thermodynamics. The room temperature data imply a laminar coverage, although annealing studies suggest the possibility of cluster formation with increasing temperature (0<10 monolayers). These results are also consistent with those obtained by Waldrop et. al. for Ti:GaAs(100) interfaces

  10. Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

    Science.gov (United States)

    Chen, Ying; Emanetoglu, Nuri William; Saraf, Gaurav; Wu, Pan; Lu, Yicheng; Parekh, Aniruddh; Merai, Vinod; Udovich, Eric; Lu, Dong; Lee, Dong S; Armour, Eric A; Pophristic, Milan

    2005-07-01

    Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

  11. Growth and characterization of cubic AlGaN/GaN based devices

    Energy Technology Data Exchange (ETDEWEB)

    Potthast, S.

    2006-11-15

    Cubic GaN and AlGaN layers are grown by radio frequency plasma assisted molecular beam epitaxy on freestanding 3C-SiC (001) substrates. Detailed analysis of the substrate quality reveal a direct dependence of the roughness of the 3C-SiC on the dislocation density. Additionally a strong influence of the substrate quality on the quality of cubic GaN layers is found. GaN, AlGaN and AlN buffer layers grown at different temperatures are used to improve the structural properties of the c-GaN buffer. Best values are obtained for AlN buffers deposited at T{sub Subs}=720 C. Furthermore, the growth temperature of the buffer itself is varied. Optimized results are found for T{sub Subs}=720 C grown under a Ga coverage of one monolayer. On top of the GaN buffer, AlGaN films (0Ga coverages of one monolayer and much greater than one monolayer. A linear dependence between the Al metal flux and the Al mole fraction is measured. Investigation of the growth front using reflection high energy electron diffraction as a probe, show a predominant two-dimensional growth mode. With increasing Al mole fraction, a change in the resistivity of the AlGaN layer is observed due to the gettering of oxygen by aluminum and the variation of the oxygen ionization energy as a function of the Al content. Schottky diodes are fabricated on GaN and AlGaN using nickel as contact material. A strong deviation of the current voltage characteristics from thermionic emission theory is found, measuring anormal high leakage current, caused by the presence of oxygen donors near the surface. It is investigated, that thermal annealing in air reduces the reverse current by three orders of magnitude. AlGaN/GaN are used to fabricate heterojunction field effect transistor structures. Analysis of the capacitance-voltage characteristics at T=150 K revealed clear evidence for the existence of a two-dimensional electron gas, and a sheet carrier concentration of about 1.6 x 10{sup 12}cm{sup -2} is

  12. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111

    Directory of Open Access Journals (Sweden)

    J. Hennig

    2015-07-01

    Full Text Available We report on GaN based field-effect transistor (FET structures exhibiting sheet carrier densities of n = 2.9 1013 cm−2 for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally xIn = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the InxGa1−xN/GaN/AlN/Al0.87In0.13N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of ISD = 1300 mA/mm (560 mA/mm. In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  13. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

    Science.gov (United States)

    Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

    2016-11-21

    AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

  14. Terahertz GaAs/AlAs quantum-cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Schrottke, L., E-mail: lutz@pdi-berlin.de; Lü, X.; Rozas, G.; Biermann, K.; Grahn, H. T. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany)

    2016-03-07

    We have realized GaAs/AlAs quantum-cascade lasers operating at 4.75 THz exhibiting more than three times higher wall plug efficiencies than GaAs/Al{sub 0.25}Ga{sub 0.75}As lasers with an almost identical design. At the same time, the threshold current density at 10 K is reduced from about 350 A/cm{sup 2} for the GaAs/Al{sub 0.25}Ga{sub 0.75}As laser to about 120 A/cm{sup 2} for the GaAs/AlAs laser. Substituting AlAs for Al{sub 0.25}Ga{sub 0.75}As barriers leads to a larger energy separation between the subbands reducing the probability for leakage currents through parasitic states and for reabsorption of the laser light. The higher barriers allow for a shift of the quasi-continuum of states to much higher energies. The use of a binary barrier material may also reduce detrimental effects due to the expected composition fluctuations in ternary alloys.

  15. Salinity Inhibits Rice Seed Germination by Reducing α-Amylase Activity via Decreased Bioactive Gibberellin Content

    Directory of Open Access Journals (Sweden)

    Li Liu

    2018-03-01

    Full Text Available Seed germination plays important roles in the establishment of seedlings and their subsequent growth; however, seed germination is inhibited by salinity, and the inhibitory mechanism remains elusive. Our results indicate that NaCl treatment inhibits rice seed germination by decreasing the contents of bioactive gibberellins (GAs, such as GA1 and GA4, and that this inhibition can be rescued by exogenous bioactive GA application. To explore the mechanism of bioactive GA deficiency, the effect of NaCl on GA metabolic gene expression was investigated, revealing that expression of both GA biosynthetic genes and GA-inactivated genes was up-regulated by NaCl treatment. These results suggest that NaCl-induced bioactive GA deficiency is caused by up-regulated expression of GA-inactivated genes, and the up-regulated expression of GA biosynthetic genes might be a consequence of negative feedback regulation of the bioactive GA deficiency. Moreover, we provide evidence that NaCl-induced bioactive GA deficiency inhibits rice seed germination by decreasing α-amylase activity via down-regulation of α-amylase gene expression. Additionally, exogenous bioactive GA rescues NaCl-inhibited seed germination by enhancing α-amylase activity. Thus, NaCl treatment reduces bioactive GA content through promotion of bioactive GA inactivation, which in turn inhibits rice seed germination by decreasing α-amylase activity via down-regulation of α-amylase gene expression.

  16. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  17. Biological behaviour of some 67Ga and 64Cu chelates

    International Nuclear Information System (INIS)

    Leonovicova, T.; Angelis, B.; Cifka, J.; Cifkova, I.

    1984-01-01

    Chelates of 67 Ga and 64 Cu with iminodiacetic acid (IDA) and its two phenyl derivatives as well as with nitrilotriacetic acid (NTA) and benzylnitrilotriacetic acid (BNTA) were prepared. All the chelates were found to be negatively charged. A study of the biological distribution of these chelates in rats during time intervals of 3 to 180 min showed that the chelate of 67 Ga with IDA substituted at a phenyl by a hydrophobic substituent is excreted by the kidneys into the urine at a much higher rate than the IDA chelate of 67 Ga. The excretion of NTA and BNTA chelates of 67 Ga is the opposite. Blood clearance of 64 Cu chelates is more rapid than that of 67 Ga chelates. Chelates of 64 Cu accumulate in the liver and with the bile are slowly excreted into the intestines, urinary excretion is negligible. (author)

  18. Local Content

    CSIR Research Space (South Africa)

    Gibberd, Jeremy

    2016-10-01

    Full Text Available Local content refers to materials and products made in a country as opposed those that are imported. There is an increasing interest in the concept of local content as a means of supporting local economies and providing jobs (Belderbos & Sleuwaegen...

  19. GaN/AlGaN-based UV photodetectors with performances exceeding the PMTS

    OpenAIRE

    Tut, Turgut

    2008-01-01

    Ankara : The Department of Physics and the Institute of Engineering and Science of Bilkent University, 2008. Thesis (Ph.D.) -- Bilkent University, 2008. Includes bibliographical references leaves 73-80. The recent developments in high Al-content AlxGa1−xN material growth technology made it possible to fabricate high performance solar-blind photodetectors operating in the ultraviolet (UV) spectral region with improved receiver sensitivity, low noise, low dark current density,...

  20. Magnetic properties, microstructure and corrosion behavior of (Pr,nd)12.6Fe81.3B6.1-type sintered magnets doped with (Pr,nd)30Fe62Ga8

    Science.gov (United States)

    Ni, Junjie; Zhang, Zhenyu; Liu, Ying; Jia, Zhengfeng; Huang, Baoxu; Yin, Yibin

    2016-10-01

    NdFeB sintered magnets with (Pr,Nd)30Fe62Ga8 were prepared by a binary powder blending method and their magnetic properties, microstructure and corrosion behavior were investigated. Addition of 3 wt% (Pr,Nd)30Fe62Ga8 was found to be the most effective for improving (BH)max and iHc of the magnets. The increase in both magnetic parameters was related to the alteration in microstructure. However, in other samples the occurrence of micropore and the aggregation of intergranular phases harmed the magnetic properties. Such disadvantageous microstructure features also caused higher corrosion current density, thus decreasing the corrosion resistance of the sample with higher additive content. In addition, the Ga-containing intergranular phases that are more stable than the (Pr,Nd)-rich phase formed in the additive doped magnets, leading to better corrosion resistance of the 3 wt% additives doped sample in comparison with the contrastive sample.

  1. [The development of pollen grains and formation of pollen tubes in higher plants : I. Quantitative measurements of the DNA-content of generative and vegetative nuclei in the pollen grain and pollen tube of Petunia hybrida mutants].

    Science.gov (United States)

    Hesemann, C U

    1971-01-01

    The DNA-content of generative and vegetative nuclei in mature pollen grains of four Petunia hybrida mutants was determined by cytophotometry. In addition the DNA-content of generative and vegetative nuclei in the pollen tube of two of these four mutants (virescens-2 n and ustulata-2 n) was cytophotometrically measured.The DNA-values found in the generative nuclei indicate that the DNA-replication continues in the mature pollen grain and comes to an end only after the migration of the nuclei into the pollen tube. These data are in disagreement with the results of DNA-measurements described for a limited number of other species which all show completion of DNA-synthesis during the maturation stage of the pollen grains.The vegetative nuclei of the four Petunia mutants studied show significant differences in the onset of the degenerative phase. Extreme variation is manifested in the ustulata-2 n mutant in which the degeneration of nuclei may reach the final stage in the maturing pollen grain. However in this mutant vegetative nuclei with an unaltered DNA-content may also be demonstrated in the pollen tube. Some of the vegetative nuclei in the pollen tube of ustulata-2 n exhibit an increased amount of DNA which could be the result of differential DNA-replication in the vegetative nuclei. The decrease of the DNA-content in a certain fraction of the vegetative nuclei in the maturing pollen grain does not agree with observations made in other species by several authors who report DNA constancy until the pollen grain is fully mature.The data obtained from the analysis of the four Petunia hybrida mutants point to an important role of the vegetative nucleus in the development of the pollen tube. The Petunia hybrida mutants may be regarded as especially favourable material for investigations concerning the function of the vegetative cell in the development of the pollen grain and pollen tube.

  2. Optical characterization of In xGa1-xN alloys

    International Nuclear Information System (INIS)

    Gartner, M.; Kruse, C.; Modreanu, M.; Tausendfreund, A.; Roder, C.; Hommel, D.

    2006-01-01

    InGaN layers were grown by molecular beam epitaxy (MBE) either directly on (0 0 0 1) sapphire substrates or on GaN-template layers deposited by metal-organic vapor-phase epitaxy (MOVPE). We combined spectroscopic ellipsometry (SE), Raman spectroscopy (RS), photoluminescence (PL) and atomic force microscopy (AFM) measurements to investigate optical properties, microstructure, vibrational and mechanical properties of the InGaN/GaN/sapphire layers. The analysis of SE data was done using a parametric dielectric function model, established by in situ and ex situ measurements. A dielectric function database, optical band gap, the microstructure and the alloy composition of the layers were derived. The variation of the InGaN band gap with the In content (x) in the 0 g = 3.44-4.5x. The purity and the stability of the GaN and InGaN crystalline phase were investigated by RS

  3. Growth and characterization of InGaAs based nanowire-heterostructures

    International Nuclear Information System (INIS)

    Treu, Julian Pascal

    2017-01-01

    tunability covering the technologically relevant telecommunication wavelengths. However, given their high surface-to-volume ratio, nanowire structures are especially prone to detrimental surface states, deteriorating in particular radiative efficiencies. Probing surfacestate related Fermi level pinning via detailed photoluminescence spectroscopy, we evaluate the influence of Ga-content on band bending and dominant recombination mechanism by studying as-grown nanowires covered by native oxide in comparison with nanowires free of oxide after wet-chemical treatment. In conjunction with complementary X-ray photoelectron spectroscopy, we identify a cross-over between surface electron accumulation for In-rich InGaAs nanowires to electron depletion for a gallium content between ∼ 20-30%. For stable passivation of deteriorating surface states higher bandgap materials are applied in radial core-shell geometry. Exploiting low surface recombination velocity and existing doping proficiency of InAsP, we establish a hybrid process combining MBE grown InAs core structures surrounded by metal organic vapor deposited (MOCVD) InAsP layers. This directly induces an increase in emission intensity by up to two orders of magnitude that can be related to high interface quality, as further corroborated by detailed TEM analysis of cross-sectional lamella structures. By systematically tuning thickness and phosphorus content we tune core-emission energies via strain-induced peak shifts and elucidate detrimental effects of plastic relaxation upon too high lattice mismatch. Introducing fully latticematched InGaAs-InAlAs heterostructures, such undesired strain accumulation and accompanied defect formation can be avoided, reflected by the absence of any strain-induced spectral shifts in peak emission energy and confirmed by high-resolution X-ray reciprocal space maps (strain ε core < 0.1%). As entirely in-situ based MBE process, exposure to ambient conditions is no longer required, further enhancing

  4. Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Tuna, Oecal

    2013-01-01

    energy of Mg in Mg-doped GaN which is about 160 meV. The effect of Mg concentration on the conductivity is investigated by growing InN and In-rich InGaN layers doped with different Mg concentrations. ECV results indicated that p-type buried layers exist in all Mg-doped InN and In-rich InGaN layers. As expected, a surface accumulation layer is observed. A strong correlation with amount of surface accumulation and In content in InGaN is obtained. It is also shown that the Mg doping concentration is critical for conductivity type. For instance, in the case of InN:Mg, p-type conductivity is obtained when the InN layers are doped with Mg concentration in the range of 2.6 x 10 20 cm -3 , whereas a higher magnesium concentration is shown to result in a completely n-type conduction. In the case of over doping, Mg atoms form complexes with N vacancies which behave as donors and therefore this result in a change in conductivity from p- to n-type.

  5. Positron annihilation study of Pd contacts on impurity-doped GaN

    International Nuclear Information System (INIS)

    Lee, Jong-Lam; Kim, Jong Kyu; Weber, Marc H.; Lynn, Kelvin G.

    2001-01-01

    Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. [copyright] 2001 American Institute of Physics

  6. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    International Nuclear Information System (INIS)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

    2010-01-01

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  7. Effect of Al substitution for Ga on the mechanical properties of directional solidified Fe-Ga alloys

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yangyang; Li, Jiheng; Gao, Xuexu, E-mail: gaox@skl.ustb.edu.cn

    2017-02-01

    Alloys of Fe{sub 82}Ga{sub 18−x}Al{sub x} (x=0, 4.5, 6, 9, 12, 13.5) were prepared by directional solidification technique and exhibited a <001> preferred orientation along the axis of alloy rods. The saturation magnetostriction value of the Fe{sub 82}Ga{sub 13.5}Al{sub 4.5} alloy was 247 ppm under no pre-stress. The tensile properties of alloys of Fe{sub 82}Ga{sub 18−x}Al{sub x} at room temperature were investigated. The results showed that tensile ductility of binary Fe-Ga alloy was significantly improved with Al addition. The fracture elongation of the Fe{sub 82}Ga{sub 18} alloy was only 1.3%, while that of the Fe{sub 82}Ga{sub 9}Al{sub 9} alloy increased up to 16.5%. Addition of Al increased the strength of grain boundary and cleavage, resulting in the enhancement of tensile ductility of the Fe-Ga-Al alloys. Analysis of deformation microstructure showed that a great number of deformation twins formed in the Fe-Ga-Al alloys, which were thought to be the source of serrated yielding in the stress-strain curves. The effect of Al content in the Fe-Ga-Al alloys on tensile ductility was also studied by the analysis of deformation twins. It indicated that the joint effect of slip and twinning was beneficial to obtain the best ductility in the Fe{sub 82}Ga{sub 9}Al{sub 9} alloy. - Highlights: • Tensile ductility of directional solidified Fe-Ga alloys was significantly improved with Al addition. • The fracture elongation of binary Fe{sub 82}Ga{sub 18} alloy was only 1.3% at room temperature. • The fracture elongation of Fe{sub 82}Ga{sub 9}Al{sub 9} alloy was 16.5% at room temperature. • A great number of deformation twins formed in the Fe-Ga-Al alloys during tensile tests at room temperature.

  8. AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

    International Nuclear Information System (INIS)

    Wang, H.T.; Tan, L.S.; Chor, E.F.

    2007-01-01

    Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 deg. C in flowing N 2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions

  9. Antisites and anisotropic diffusion in GaAs and GaSb

    KAUST Repository

    Tahini, H. A.; Bracht, H.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlö gl, Udo

    2013-01-01

    The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport

  10. Control of strain in GaN by a combination of H2 and N2 carrier gases

    International Nuclear Information System (INIS)

    Yamaguchi, Shigeo; Kariya, Michihiko; Kosaki, Masayoshi; Yukawa, Yohei; Nitta, Shugo; Amano, Hiroshi; Akasaki, Isamu

    2001-01-01

    We study the effect of a combination of N 2 and H 2 carrier gases on the residual strain and crystalline properties of GaN, and we propose its application to the improvement of crystalline quality of GaN/Al 0.17 Ga 0.83 N multiple quantum well (MQW) structures. GaN was grown with H 2 or N 2 carrier gas (H 2 - or N 2 - GaN) on an AlN low-temperature-deposited buffer layer. A (0001) sapphire substrate was used. N 2 - GaN was grown on H 2 - GaN. The total thickness was set to be 1.5 μm, and the ratio of N 2 - GaN thickness to the total thickness, x, ranged from 0 to 1. With increasing x, the tensile stress in GaN increased. Photoluminescence intensity at room temperature was much enhanced. Moreover, the crystalline quality of GaN/Al 0.17 Ga 0.83 N MQW was much higher when the MQW was grown with N 2 on H 2 - GaN than when it was grown with H 2 on H 2 - GaN. These results were due to the achievement of control of strain in GaN using a combination of N 2 - GaN and H 2 - GaN. [copyright] 2001 American Institute of Physics

  11. Simulation of I-V and C-V curves of metal/GaN/AlGaN/GaN heterostructures with trap-assisted tunnelling

    International Nuclear Information System (INIS)

    Racko, J.; Benko, P.; Grmanova, A.; Harmatha, L.; Breza, J.; Granzner, R.; Schwierz, F.

    2013-01-01

    The described trap-assisted tunnelling (TAT) model of the metal/GaN/Al_xGaN_1_-_x/GaN structure allows analyzing the effect of deep traps upon I-V and C-V characteristics. The negative charge with magnitude proportional to the molar concentration of aluminium gives rise to a barrier at the first heterojunction, which is higher than the Schottky barrier at the metal/GaN interface. On increasing the reverse bias Va the barrier at the first heterojunction is getting lower. The drop of this barrier causes an exponential increase of the reverse current. The current saturates, when the first heterojunction barrier is lower than the Schottky barrier. The effect of TAT can be observed also on varying the parameters of the band of traps. The shape of the simulated C-V curve is affected by changes in the charge on the second heterojunction. In principle it reflects the decrease of electron concentration in the quantum well on increasing the reverse bias V_a. The space charge region becomes wider and the electron concentration at the second heterojunction falls below the concentration of ionized deep trapping centres, which manifests itself as a noticeable drop in the capacitance of the metal/GaN/Al_xGaN_1_-_x/GaN structure. (authors)

  12. Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

    International Nuclear Information System (INIS)

    Capotondi, F.; Biasiol, G.; Ercolani, D.; Grillo, V.; Carlino, E.; Romanato, F.; Sorba, L.

    2005-01-01

    The relationship between structural and low-temperature transport properties is explored for In x Al 1 - x As/In x Ga 1 - x As metamorphic quantum wells with x > 0.7 grown on GaAs by molecular beam epitaxy. Different step-graded buffer layers are used to gradually adapt the in-plane lattice parameter from the GaAs towards the InGaAs value. We show that using buffer layers with a suitable maximum In content the residual compressive strain in the quantum well region can be strongly reduced. Samples with virtually no residual strain in the quantum well region show a low-temperature electron mobility up to 29 m 2 /V s while for samples with higher residual compressive strain the low-temperature mobility is reduced. Furthermore, for samples with buffers inducing a tensile strain in the quantum well region, deep grooves are observed on the surface, and in correspondence we notice a strong deterioration of the low-temperature transport properties

  13. Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

    Science.gov (United States)

    Netzel, C.; Knauer, A.; Weyers, M.

    2012-12-01

    We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ = 320-350 nm) by temperature dependent photoluminescence. Low indium content in AlInGaN structures causes a significant intensity increase by change of the polarization of the emitted light. Polarization changes from E ⊥ c to E ‖ c with increasing aluminum content. It switches back to E ⊥ c with the incorporation of indium. The polarization degree decreases with temperature. This temperature dependence can corrupt internal quantum efficiency determination by temperature dependent photoluminescence.

  14. High-burnup/low-cooling-time fuel carrying capacity of the GA-4 and GA-9 spent fuel shipping casks

    International Nuclear Information System (INIS)

    Boshoven, J.K.; Hopf, J.E.

    1994-01-01

    In response to utilities' projected needs to ship higher burnup spent fuel, General Atomics (GA) has performed shielding and thermal analysis for the GA-4 and GA-9 legal weight shipping casks to determine the minimum cooling times for various burnup levels for fully loaded GA-4 and GA-9 casks and reduced payloads for the casks. Tables are provided in the paper which show the minimum cooling time for a given burnup and payload for each of the casks. The analyses show that the GA-4 and GA-9 casks can carry at least as many high-burnup and/or short-cooling-time spent fuel assemblies as present day shipping casks. In addition, the GA casks are able to carry at least twice as many assemblies as the present day shipping casks if the spent fuel burnup levels and/or cooling times are open-quotes coolerclose quotes or open-quotes as coolclose quotes as their design basis fuels. The increased shipping capacity for these more common open-quotes coolerclose quotes assemblies allows fewer shipments and therefore increases the efficiency and lowers predicted risks of the transport system

  15. Somatostatin receptor PET in neuroendocrine tumours: 68Ga-DOTA0,Tyr3-octreotide versus 68Ga-DOTA0-lanreotide

    International Nuclear Information System (INIS)

    Putzer, Daniel; Kroiss, Alexander; Waitz, Dietmar; Gabriel, Michael; Uprimny, Christian; Guggenberg, Elisabeth von; Decristoforo, Clemens; Warwitz, Boris; Virgolini, Irene Johanna; Traub-Weidinger, Tatjana; Widmann, Gerlig

    2013-01-01

    The aim of this study was to evaluate the impact of 68 Ga-labelled DOTA 0 -lanreotide ( 68 Ga-DOTA-LAN) on the diagnostic assessment of neuroendocrine tumour (NET) patients with low to moderate uptake on planar somatostatin receptor (SSTR) scintigraphy or 68 Ga-labelled DOTA 0 ,Tyr 3 -octreotide ( 68 Ga-DOTA-TOC) positron emission tomography (PET). Fifty-three patients with histologically confirmed NET and clinical signs of progressive disease, who had not qualified for peptide receptor radionuclide therapy (PRRT) on planar SSTR scintigraphy or 68 Ga-DOTA-TOC PET (n = 38) due to lack of tracer uptake, underwent 68 Ga-DOTA-LAN PET to evaluate a treatment option with 90 Y-labelled lanreotide according to the MAURITIUS trial. The included patients received 150 ± 30 MBq of each radiopharmaceutical intravenously. PET scans were acquired 60-90 min after intravenous bolus injection. Image results from both PET scans were compared head to head, focusing on the intensity of tracer uptake in terms of treatment decision. CT was used for morphologic correlation of tumour lesions. To further evaluate the binding affinities of each tracer, quantitative and qualitative values were calculated for target lesions. 68 Ga-DOTA-LAN and 68 Ga-DOTA-TOC both showed equivalent findings in 24/38 patients when fused PET/CT images were interpreted. The sensitivity, specificity and accuracy of 68 Ga-DOTA-LAN in comparison to CT were 0.63, 0.5 and 0.62 (n = 53; p 68 Ga-DOTA-TOC in comparison to CT 0.78, 0.5 and 0.76 (n = 38; p 68 Ga-DOTA-TOC showed a significantly higher maximum standardized uptake value (SUV max ) regarding the primary tumour in 25 patients (p 68 Ga-DOTA-LAN. Corresponding values of both PET scans for tumour and liver did not show any significant correlation. 68 Ga-DOTA-TOC revealed more tumour sites than 68 Ga-DOTA-LAN (106 vs 53). The tumour to background ratios for tumour and liver calculated from SUV max measurements were significantly higher for 68 Ga-DOTA-TOC than 68 Ga

  16. Changes in endogenous hormone contents of pear stock ( Pyrus ...

    African Journals Online (AJOL)

    In this study, changes in endogenous hormone contents of pear stock seeds during cold stratification were investigated. Abscisic acid (ABA) content decreased with increase in the periods of stratification of pear stock seeds. However, gibberellic acid (GA) and indole-3-acetic acid (IAA) contents of Pyrus betulaefolia and ...

  17. (In)GaSb/AlGaSb quantum wells grown on Si substrates

    International Nuclear Information System (INIS)

    Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

    2007-01-01

    We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems. The measured ground state energy of each QW matched well with the theoretical value calculated by solving the Schroedinger equation for a finite potential QW. The temperature dependence of the PL intensity showed large activation energy (∼ 77.6 meV) from QW. The results indicated that the fabricated QW structure had a high crystalline quality, and the GaSb QW on Si for optical devices operating at temperatures higher than room temperature will be expected

  18. Ga-Bi-Te system

    International Nuclear Information System (INIS)

    Rustamov, P.G.; Seidova, N.A.; Shakhbazov, M.G.; AN Azerbajdzhanskoj SSR, Baku. Inst. Neorganicheskoj i Fizicheskoj Khimii)

    1976-01-01

    To elucidate the nature of interaction in the system Ga-Bi-Te, a study has been made of sections GaTe-Bi 2 Te 3 , Ga 2 Te 3 -Bi, GaTe-Bi and Bi 2 Te 3 -Ga. The alloys have been prepared by direct melting of the components or their alloys with subsequent homogenizin.o annealing at 400 deg C. The study has been made by the methods of differential thermal, microstructural analysis and by microhardness measurements. On the basis of literature data and data obtained a projection of the liquidus surface of the phase diagram for the system Ga-Bi-Te has been constructed. In the ternary system there are 17 curves of monovariant equilibrium dividing the liquidus into 10 fields of primary crystallization of phases, 9 points of non-variant equilibrium of which 4 points are triple eutectics and 5 points are triple peritectics

  19. Ab initio-based bulk and surface thermodynamics of InGaN alloys. Investigating the effects of strain and surface polarity

    Energy Technology Data Exchange (ETDEWEB)

    Duff, Andrew I.; Lymperakis, Liverios; Neugebauer, Joerg [Max-Planck-Institut fuer Eisenforschung, Duesseldorf (Germany)

    2015-05-15

    The growth of high In content InGaN with sufficiently high crystal quality is challenging due to the differences in the GaN and InN thermodynamics. The surprisingly different thermodynamics is due to a complex competition between strain and chemistry and mediated by the different indium and gallium atomic radii as well as their different bonding enthalpies with nitrogen. In the present work, we investigate bulk and surface thermodynamics of molecular beam epitaxial (MBE) growth of In{sub x}Ga{sub 1-x}N for the technologically relevant (0001) and (000 anti 1) growth planes by means of density functional theory calculations. Our calculations confirm that coherent growth fully suppresses phase separation through spinodal decomposition. However, the biaxial strain is found to have a marginal effect on the critical temperatures for In{sub x}Ga{sub 1-x}N decomposition. Furthermore, the thermal stability of excess indium is found to be remarkably higher on N-polar surfaces than on the Ga-polar surfaces. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

    International Nuclear Information System (INIS)

    Hammersley, Simon; Dawson, Phil; Kappers, Menno J.; Massabuau, Fabien C.P.; Sahonta, Suman-Lata; Oliver, Rachel A.; Humphreys, Colin J.

    2016-01-01

    In this paper we report on the impact that the quantum well growth temperature has on the internal quantum efficiency and carrier recombination dynamics of two sets of InGaN/GaN multiple quantum well samples, designed to emit at 460 and 530 nm, in which the indium content of the quantum wells within each sample set was maintained. Measurements of the internal quantum efficiency of each sample set showed a systematic variation, with quantum wells grown at a higher temperature exhibiting higher internal quantum efficiency and this variation was preserved at all excitation power densities. By investigating the carrier dynamics at both 10 K and 300 K we were able to attribute this change in internal quantum efficiency to a decrease in the non-radiative recombination rate as the QW growth temperature was increased which we attribute to a decrease in incorporation of the point defects. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Teton Russet: an early-maturing, dual-purpose potato cultivar having higher protein and vitamin C content, low Asparagine, and resistances to common scab and Fusarium dry rot

    Science.gov (United States)

    Teton Russet is an early-maturing, medium- russeted, potato cultivar with high merit for both fresh-pack and processing. In early harvest trials in the Pacific Northwest, Teton Russet had total yields similar to Russet Norkotah, and higher than Ranger Russet and Russet Burbank. Marketable yield of T...

  2. Optical losses in p-type layers of GaN ridge waveguides in the IR region

    Science.gov (United States)

    Westreich, Ohad; Katz, Moti; Atar, Gil; Paltiel, Yossi; Sicron, Noam

    2017-07-01

    Optical losses in c-plane (0001) GaN ridge waveguides, containing Mg-doped layers, were measured at 1064 nm, using the Fabry-Perot method. The losses increase linearly with the modal content of the p-layer, indicating that the absorption in these waveguides is dominated by p-layer absorption. The p-layer absorption is strongly anisotropic with E⊥c losses 4 times higher than E∥c. The absorption is temperature independent between 10 °C and 60 °C, supporting the possibility that it is related to Mg-bound holes.

  3. Magnetic anisotropy in GaMnAs; Magnetische Anisotropie in GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Daeubler, Joachim

    2009-07-02

    The goal of the present work was the detailed investigation of the impact of parameters like vertical strain, hole concentration, substrate orientation and patterning on the MA in GaMnAs. At first a method is introduced enabling us to determine the MA from angle-dependent magnetotransport measurements. This method was used to analyze the impact of vertical strain {epsilon}{sub zz} on the MA in a series of GaMnAs layers with a Mn content of 5% grown on relaxed InGaAs-templates. While hole concentration and Curie temperature were found to be unaffected by vertical strain, a significant dependence of the MA on {epsilon}{sub zz} was found. The most pronounced dependence was observed for the anisotropy parameter B{sub 2} {sub perpendicular} {sub to}, representing the intrinsic contribution to the MA perpendicular to the layer plane. For this parameter a linear dependence on {epsilon}{sub zz} was found, resulting in a strain-induced transition of the magnetic easy axis with increasing strain from in-plane to out-of-plane at {epsilon}{sub zz} {approx} -0.13%. Post-growth annealing of the samples leads to an outdiffusion and/or regrouping of the highly mobile Mn interstitial donor defects, resulting in an increase in both p and T{sub C}. For the annealed samples, the transition from in-plane to out-of-plane easy axis takes place at {epsilon}{sub zz} {approx} -0.07%. From a comparison of as-grown and annealed samples, B{sub 2} {sub perpendicular} {sub to} was found to be proportional to both p and {epsilon}{sub zz}, B{sub 2} {sub perpendicular} {sub to} {proportional_to} p .{epsilon}{sub zz}. To study the influence of substrate orientation on the magnetic properties of GaMnAs, a series of GaMnAs layers with Mn contents up to 5% was grown on (001)- and (113)A-oriented GaAs substrates. The hole densities and Curie temperatures, determined from magnetotransport measurements, are drastically reduced in the (113)A layers. The differences in the magnetic properties of (113)A- and

  4. Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

    International Nuclear Information System (INIS)

    Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun

    1999-01-01

    We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps

  5. Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

    International Nuclear Information System (INIS)

    Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A; Molina-Valdovinos, S; Melendez-Lira, M; Lopez-Lopez, M

    2009-01-01

    In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm -1 and 291 cm -1 , respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm -1 and 250 cm -1 are evidenced. Additional new peaks located around 650 and 690 cm -1 are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm -1 and 695.2 cm -1 , in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn) m As n localized structures.

  6. Epitaxy of (Ga,Mn)As; Epitaxie von (Ga,Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Utz, Martin

    2012-09-14

    The focus of this work lies on the enhancement of the magnetic properties of the ferromagnetic semiconductor Gallium manganese arsenide (GaMnAs), which is a basic material for the research in spintronics: It is told, how a high sample reproducibility and a strong control over the growth process can be gained by applying band edge spectroscopy and a special procedure for the material flux calibration. Also the most important methods for the electrical characterization of GaMnAs are discussed in a critical manner by showing that the anomalous Hall Effect contributes significantly to the Hall resistance even at room temperature and that Novak's method for the termination of the Curie-temperature provides correct values for layers with low defect concentration. Furthermore it is reported on the considerable enlargement of the useable parameter space of GaMnAs which was enabled by the enhanced control over the growth process: It was possible to grow layers with a very high Manganese content of 22% and Curie temperatures of 172 K and even once were produced which showed a strong magnetic moment despite an insulating behaviour at low temperatures. A last key aspect is the growth and characterization of ultra-thin GaMnAs layers, giving prospects for gating experiments or experiments on the proximity effect as these layers combine high Curie temperatures with insulating behaviour.

  7. Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

    Energy Technology Data Exchange (ETDEWEB)

    Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A [Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia, Sede Manizales, A.A. 127 (Colombia); Molina-Valdovinos, S; Melendez-Lira, M [Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Av. IPN No. 2508, Apartado Postal 14-740, 07000 Mexico D.F (Mexico); Lopez-Lopez, M, E-mail: aopulzaram@unal.edu.c [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Apartado Postal 1-1010, Queretaro 76000 (Mexico)

    2009-05-01

    In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm{sup -1} and 291 cm{sup -1}, respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm{sup -1} and 250 cm{sup -1} are evidenced. Additional new peaks located around 650 and 690 cm {sup -1} are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm{sup -1} and 695.2 cm{sup -1}, in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn){sub m}As{sub n} localized structures.

  8. AlGaN/GaN HEMT structures on ammono bulk GaN substrate

    International Nuclear Information System (INIS)

    Kruszewski, P; Prystawko, P; Krysko, M; Smalc-Koziorowska, J; Leszczynski, M; Kasalynas, I; Nowakowska-Siwinska, A; Plesiewicz, J; Dwilinski, R; Zajac, M; Kucharski, R

    2014-01-01

    The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10 4  cm −2  and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices—Schottky diodes and transistors—were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate. (paper)

  9. InGaN/GaN Nanowire LEDs and Lasers

    KAUST Repository

    Zhao, Chao; Ng, Tien Khee; Jahangir, Shafat; Frost, Thomas; Bhattacharya, Pallab; Ooi, Boon S.

    2016-01-01

    -droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light

  10. Robust AlGaN/GaN MMIC Receiver Components

    NARCIS (Netherlands)

    Heijningen, M. van; Janssen, J.P.B.; Vliet, F.E. van

    2009-01-01

    Apart from delivering very high output powers, GaN can also be used to realize robust receiver components, such as Low Noise Amplifiersand Switches. This paper presents the designand measurement results of two GaN X-band switch and LNA MMICs, designed for integration in a radar front end. The switch

  11. Physiology and microbial community structure in soil at extreme water content

    Czech Academy of Sciences Publication Activity Database

    Uhlířová, Eva; Elhottová, Dana; Tříska, Jan; Šantrůčková, Hana

    2005-01-01

    Roč. 50, č. 2 (2005), s. 161-166 ISSN 0015-5632 R&D Projects: GA ČR(CZ) GA206/99/1410; GA ČR(CZ) GA526/99/P033 Institutional research plan: CEZ:AV0Z6066911 Keywords : microbial community structure * soils * extreme water content Subject RIV: EH - Ecology, Behaviour Impact factor: 0.918, year: 2005

  12. Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Gong, Z.; Niu, Z.C.; Huang, S.S.; Fang, Z.D.; Sun, B.Q.; Xia, J.B.

    2005-01-01

    GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time. The observed morphologic evolution of Ga droplets during annealing does not support the hypothesis that As atoms preferentially react with Ga around the periphery of the droplets, but somehow relates to a dewetting process similar to that of unstable films. Photoluminescene (PL) test results confirm the quantum-confinement effect of these GaAs nanorings. Using similar methods, we have fabricated InGaAs/GaAs lattice-mismatched rings

  13. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ulloa, J. M., E-mail: jmulloa@isom.upm.es; Utrilla, A. D.; Guzman, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Dpto. Ingeniería Electrónica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Reyes, D. F.; Ben, T.; González, D. [Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

    2014-10-07

    Changing the growth rate during the heteroepitaxial capping of InAs/GaAs quantum dots (QDs) with a 5 nm-thick GaAsSbN capping layer (CL) strongly modifies the QD structural and optical properties. A size and shape transition from taller pyramids to flatter lens-shaped QDs is observed when the CL growth rate is decreased from 1.5 to 0.5 ML/s. This indicates that the QD dissolution processes taking place during capping can be controlled to some extent by the GaAsSbN CL growth rate, with high growth rates allowing a complete preservation of the QDs. However, the dissolution processes are shown to have a leveling effect on the QD height, giving rise to a narrower size distribution for lower growth rates. Contrary to what could be expected, these effects are opposite to the strong blue-shift and improvement of the photoluminescence (PL) observed for higher growth rates. Nevertheless, the PL results can be understood in terms of the strong impact of the growth rate on the Sb and N incorporation into the CL, which results in lower Sb and N contents at higher growth rates. Besides the QD-CL band offsets and QD strain, the different CL composition alters the band alignment of the system, which can be transformed to type-II at low growth rates. These results show the key role of the alloyed CL growth parameters on the resulting QD properties and demonstrate an intricate correlation between the PL spectra and the sample morphology in complex QD-CL structures.

  14. Characterization of the structural and optical properties of CuIn{sub 1−x}Ga{sub x}Se{sub 2} QJ;thin films by X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Ya-Fen, E-mail: yfwu@mail.mcut.edu.tw [Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan (China); Hsu, Hung-Pin [Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan (China); Chen, Hung-Ing [Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan (China)

    2013-10-15

    The structural and optical properties of Cu-poor CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films with different gallium contents grown using the co-evaporated technique were studied. Measurements of X-ray diffraction (XRD), temperature-dependent photoluminescence (PL), and photoreflectance (PR) were performed on the samples. The emission peaks in the PL spectra and PR spectra observed around 1.0–1.2 eV are attributed to donor–acceptor pairs and defect-related luminescence. With increasing gallium content, the linewidths of the luminescence spectra for the samples become wider, which we attribute to greater statistical disordering between indium and gallium. The structural properties of the CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films are further characterized by simulation of the XRD spectra with a theoretical model. It is found that the sample with higher gallium content exhibits less uniformity of microstructure size. The X-ray diffraction line profile analysis also shows a stronger internal strain in the sample with the higher gallium content, which is consistent with its broader microstructure size distribution. The conversion efficiency of the CuIn{sub 1−x}Ga{sub x}Se{sub 2}-based solar cells is also obtained and investigated through theoretical analysis. The experimental results coincide with the inferences given by the X-ray diffraction line profile analysis. -- Highlights: • Co-evaporated CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films with different gallium contents were studied. • XRD line profiles from the samples are analyzed by a theoretical model. • Less size uniformity and higher internal strain are obtained for high gallium sample. • The efficiency of CIGS solar cells is investigated through theoretical analysis. • The inferences from XRD spectra analysis coincide with experimental measurements.

  15. Hydrogen Adsorption on Ga2O3 Surface: A Combined Experimental and Computational Study

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Yun-xiang; Mei, Donghai; Liu, Chang-jun; Ge, Qingfeng

    2011-05-03

    In the present work, hydrogen adsorption on the Ga2O3 surfaces was investigated using Fourier transform infrared spectroscopy (FTIR) measurements and periodic density functional theory (DFT) calculations. Both the FTIR and DFT studies suggest that H2 dissociates on the Ga2O3 surfaces, producing OH and GaH species. The FTIR bands at 3730, 3700, 3630 and 3600 cm-1 are attributed to the vibration of the OH species whereas those at 2070 and 1990 cm-1 to the GaH species. The structures of the species detected in experiments are established through a comparison with the DFT calculated stretching frequencies. The O atom of the experimentally detected OH species is believed to originate from the surface O3c atom. On the other hand, the H atom that binds the coordinately unsaturated Ga atom results in the experimentally detected GaH species. Dissociation of H2 on the perfect Ga2O3 surface, with the formation of both OH and GaH species, is endothermic and has an energy barrier of 0.90 eV. In contrast, H2 dissociation on the defective Ga2O3 surface with oxygen vacancies, which mainly produces GaH species, is exothermic, with an energy barrier of 0.61 eV. Accordingly, presence of the oxygen vacancies promotes H2 dissociation and production of GaH species on the Ga2O3 surfaces. Higher temperatures are expected to favor oxygen vacancy creation on the Ga2O3 surfaces, and thereby benefit the production of GaH species. This analysis is consistent with the FTIR results that the bands assigned to GaH species become stronger at higher temperatures. Pacific Northwest National Laboratory is operated by Battelle for the US Department of Energy.

  16. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  17. Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems

    International Nuclear Information System (INIS)

    Shen, J; Cha, J J; Song, Y; Lee, M L

    2014-01-01

    InGaAs quantum dots (QDs) on GaP are promising for monolithic integration of optoelectronics with Si technology. To understand and improve the optical properties of InGaAs/GaP QD systems, detailed measurements of the QD atomic structure as well as the spatial distributions of each element at high resolution are crucial. This is because the QD band structure, band alignment, and optical properties are determined by the atomic structure and elemental composition. Here, we directly measure the inhomogeneous distributions of In and As in InGaAs QDs grown on GaAs and GaP substrates at the nanoscale using energy dispersive x-ray spectral mapping in a scanning transmission electron microscope. We find that the In distribution is broader on GaP than on GaAs, and as a result, the QDs appear to be In-poor using a GaP matrix. Our findings challenge some of the assumptions made for the concentrations and distributions of In within InGaAs/GaAs or InGaAs/GaP QD systems and provide detailed structural and elemental information to modify the current band structure understanding. In particular, the findings of In deficiency and inhomogeneous distribution in InGaAs/GaP QD systems help to explain photoluminescence spectral differences between InGaAs/GaAs and InGaAs/GaP QD systems. (paper)

  18. Nitridation of porous GaAs by an ECR ammonia plasma

    International Nuclear Information System (INIS)

    Naddaf, M; Hullavarad, S S; Ganesan, V; Bhoraskar, S V

    2006-01-01

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy

  19. Nitridation of porous GaAs by an ECR ammonia plasma

    Energy Technology Data Exchange (ETDEWEB)

    Naddaf, M [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India); Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic); Hullavarad, S S [Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742 (United States); Ganesan, V [Inter University Consortium, Indore (India); Bhoraskar, S V [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India)

    2006-02-15

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

  20. Nitridation of porous GaAs by an ECR ammonia plasma

    Science.gov (United States)

    Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

    2006-02-01

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

  1. Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy

    Science.gov (United States)

    Friede, Sebastian; Tomm, Jens W.; Kühn, Sergei; Hoffmann, Veit; Wenzel, Hans

    2017-02-01

    Waveguide (WG) architectures of 420-nm emitting InAlGaN/GaN diode lasers are analyzed by photoluminescence (PL) and photocurrent (PC) spectroscopy using a nearfield scanning optical microscope (NSOM) for excitation and detection. The measurements with a spatial resolution of 100 nm are implemented by scanning the fiber tip along the unprepared front facets of standard devices. PL is collected by the fiber tip, whereas PCs are extracted from the contacts that are anyway present for power supply. The mechanisms of signal generation are addressed in detail. The components of the `optical active region', multiple quantum wells (MQW), WGs, and cladding layers are separately inspected. Even separate analysis of p- and n-sections of the WG become possible. Defect levels are detected in the p-part of the WG. Their presence is consistent with the doping by Mg. An increased efficiency of carrier capture into InGaN/GaN WGs compared to GaN WGs is observed. Thus, beyond the improved optical confinement, the electrical confinement is improved, as well. NSOM PL and PC at GaN based devices do not reach the clarity and spatial resolution for WG mode analysis as seen before for GaAs based devices. This is due to higher modal absorption and higher WG losses. NSOM based optical analysis turns out to be an efficient tool for analysis of single layers grown into InAlGaN/GaN diode laser structures, even if this analysis is done at a packaged ready-to-work device.

  2. Investigation of the GaN-on-GaAs interface for vertical power device applications

    International Nuclear Information System (INIS)

    Möreke, Janina; Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-01-01

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  3. Investigation of the GaN-on-GaAs interface for vertical power device applications

    Energy Technology Data Exchange (ETDEWEB)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  4. Renal Localization of {sup 67}Ga Citrate in Noninfectious Nephritis

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kang Wook; Jeong, Min Soo; Rhee, Sunn Kgoo; Kim, Sam Yong; Shin, Young Tai; Ro, Heung Kyu [Chungnam University College of Medicine, Deajeon (Korea, Republic of)

    1992-07-15

    {sup 67}Ga citrate scan has been requested for detection or follow-up of inflammatory or neoplastic disease. Visualization of {sup 67}Ga citrate in the kidneys at 48 and 72 hr post injection is usually interpreted as evidence of renal pathology. But precise mechanisms of abnormal {sup 67}Ga uptake in kidneys were unknown. We undertook a study to determine the clinical value of {sup 67}Ga citrate imaging of the kidneys in 68 patients with primary or secondary nephropathy confirmed by renal biopsy and 66 control patients without renal disease. Renal uptake in 48 to 72 hr images was graded as follows: Grade 0=background activity;1=faint uptake greater than background; 2=definite uptake, but less than lumbar vertebrae;3 same uptake as lumbar vertebrae, but less than liver; 4=same or higher uptake than liver. The results were as follows. 1) 42 of 68(62%) patients with noninfectious nephritis showed grade 2 or higher {sup 67}Ga renal uptake but only 10 percent of control patients showed similar uptake. 2) In 14 patients with systemic lupus erythematosus, 8 of 9 (89%) patients with lupus nephritis exhibited marked renal uptake. 3) 36 of 41 patients (88%) with combined nephrotic syndrome showed Grade 2 or higher renal uptake. 4) Renal {sup 67}Ga uptake was correlated with clinical severity of nephrotic syndrome determined by serum albumin level, 24 hr urine protein excretion and serum lipid levels. 5) After complete remission of nephrotic syndrome, renal uptake in all 8 patients who were initially Grade 3 or 4, decreased to Grade 1 or 0. In conclusion, we think that the mechanism of renal {sup 67}Ga uptake in nephrotic syndrome might be related to the pathogenesis of nephrotic syndrome. In systemic lupus erythematosus, {sup 67}Ga citrate scan is useful in predicting renal involvement.

  5. Renal Localization of 67Ga Citrate in Noninfectious Nephritis

    International Nuclear Information System (INIS)

    Lee, Kang Wook; Jeong, Min Soo; Rhee, Sunn Kgoo; Kim, Sam Yong; Shin, Young Tai; Ro, Heung Kyu

    1992-01-01

    67 Ga citrate scan has been requested for detection or follow-up of inflammatory or neoplastic disease. Visualization of 67 Ga citrate in the kidneys at 48 and 72 hr post injection is usually interpreted as evidence of renal pathology. But precise mechanisms of abnormal 67 Ga uptake in kidneys were unknown. We undertook a study to determine the clinical value of 67 Ga citrate imaging of the kidneys in 68 patients with primary or secondary nephropathy confirmed by renal biopsy and 66 control patients without renal disease. Renal uptake in 48 to 72 hr images was graded as follows: Grade 0=background activity;1=faint uptake greater than background; 2=definite uptake, but less than lumbar vertebrae;3 same uptake as lumbar vertebrae, but less than liver; 4=same or higher uptake than liver. The results were as follows. 1) 42 of 68(62%) patients with noninfectious nephritis showed grade 2 or higher 67 Ga renal uptake but only 10 percent of control patients showed similar uptake. 2) In 14 patients with systemic lupus erythematosus, 8 of 9 (89%) patients with lupus nephritis exhibited marked renal uptake. 3) 36 of 41 patients (88%) with combined nephrotic syndrome showed Grade 2 or higher renal uptake. 4) Renal 67 Ga uptake was correlated with clinical severity of nephrotic syndrome determined by serum albumin level, 24 hr urine protein excretion and serum lipid levels. 5) After complete remission of nephrotic syndrome, renal uptake in all 8 patients who were initially Grade 3 or 4, decreased to Grade 1 or 0. In conclusion, we think that the mechanism of renal 67 Ga uptake in nephrotic syndrome might be related to the pathogenesis of nephrotic syndrome. In systemic lupus erythematosus, 67 Ga citrate scan is useful in predicting renal involvement.

  6. Shot noise reduction in the AlGaAs/GaAs- and InGaP/GaAs-based HBTs

    Science.gov (United States)

    Sakalas, Paulius; Schroeter, Michael; Zampardi, Peter; Zirath, Herbert

    2003-05-01

    Noise parameters of AlGaAs/GaAs and InGaP/GaAs HBTs were measured in microwave frequency range and modeled using the small-signal equivalent circuit approach. Correlated current noise sources in the base and collector currents with thermal noise in the circuit resistive elements were accounted for by the model and yielded good agreement with the measured data. This enabled an extraction of the different noise source contributions to minimum noise figure (NFmin) in AlGaAs/GaAs and InGaP/GaAs HBTs. Decomposition of the (NFmin) in to the different contributors showed that the main noise sources in investigated HBTs are correlated base and collector current shot noise. The observed minimum of NFmin versus frequency at lower collector current is explained by the reduction of the emitter/base junction shot noise component due to the spike in the emitter/base junction and associated accumulation of the quasi-thermalized electrons forming a space charge, which screens the electron transfer through the barrier. The bias (VCE) increase creates an efficient electric field in collector/base junction, capable of 'washing out' the accumulated charge. Such shot noise reduction in HBTs could be exploited in the LNA for the RF application.

  7. Growth of self-assembled (Ga)InAs/GaAs quantum dots and realization of high quality microcavities for experiments in the field of strong exciton photon coupling

    International Nuclear Information System (INIS)

    Loeffler, Andreas

    2008-01-01

    At the beginning, we improved the three dimensional optical confinement of the micropillars. The quality factor of the pillars could be increased by the use of higher reflectivity mirrors and a matched V/III ratio for the different epitaxial layers. Hence, a record quality factor of about 90000 was achieved for an active micropillar with 26 (30) mirror pairs in the top (bottom) DBR and a diameter of 4 μm. In parallel to this, we made studies on the growth of self-assembled GaInAs quantum dots on GaAs substrates. Here, the nucleation of three dimensional islands as well as their optical properties were object of the investigation. The morphological properties of the dots were analyzed by transmission and scanning electron microscopy, and the optical properties were investigated by photoluminescence and photoreflectance measurements. The optical and particularly the morphological properties of the self-assembled GaInAs quantum dots were essentially improved. Due to a low strain nucleation layer with an indium content of 30 %, the dot density could be reduced to 6-9 x 10 9 cm -2 and their geometric dimensions were increased to typical lengths between 50 and 100 nm and widths of about 30 nm. The lattice mismatch between the quantum dots and the surrounding matrix is decreased due to the reduced indium content. The minimized strain during the dot growth leads to an enhanced migration length of the deposited atoms on the surface. Finally, the obtained findings of the MBE growth of microcavities, their fabrication and the self-assembled island growth of GaInAs on GaAs were used for the realization of further samples. Low strain GaInAs quantum dots were embedded into the microresonators. These structures allowed for the first time the observation of strong coupling between light and matter in a semiconductor. In case of the low strain quantum dots with enlarged dimensions in the strong coupling regime, a vacuum Rabi-splitting of about 140 μeV between the cavity mode and

  8. Retention and subcellular distribution of 67Ga in normal organs

    International Nuclear Information System (INIS)

    Ando, A.; Ando, I.; Hiraki, T.

    1986-01-01

    Using normal rats, retention values and subcellular distribution of 67 Ga in each organ were investigated. At 10 min after administration of 67 Ga-citrate the retention value of 67 Ga in blood was 6.77% dose/g, and this value decreased with time. The values for skeletal muscle, lung, pancreas, adrenal, heart muscle, brain, small intestine, large intestine and spinal cord were the highest at 10 min after administration, and they decreased with time. Conversely this value in bone increased until 10 days after injection. But in the liver, kidney, and stomach, these values increased with time after administration and were highest 24 h or 48 h after injection. After that, they decreased with time. The value in spleen reached a plateau 48 h after administration, and hardly varied for 10 days. From the results of subcellular fractionation, it was deduced that lysosome plays quite an important role in the concentration of 67 Ga in small intestine, stomach, lung, kidney and pancreas; a lesser role in its concentration in heart muscle, and hardly any role in the 67 Ga accumulation in skeletal muscle. In spleen, the contents in nuclear, mitochrondrial, microsomal, and supernatant fractions all contributed to the accumulation of 67 Ga. (orig.) [de

  9. A Comparative 68Ga-Citrate and 68Ga-Chloride PET/CT Imaging of Staphylococcus aureus Osteomyelitis in the Rat Tibia

    Directory of Open Access Journals (Sweden)

    Petteri Lankinen

    2018-01-01

    Full Text Available There may be some differences in the in vivo behavior of 68Ga-chloride and 68Ga-citrate leading to different accumulation profiles. This study compared 68Ga-citrate and 68Ga-chloride PET/CT imaging under standardized experimental models. Methods. Diffuse Staphylococcus aureus tibial osteomyelitis and uncomplicated bone healing rat models were used (n=32. Two weeks after surgery, PET/CT imaging was performed on consecutive days using 68Ga-citrate or 68Ga-chloride, and tissue accumulation was confirmed by ex vivo analysis. In addition, peripheral quantitative computed tomography and conventional radiography were performed. Osteomyelitis was verified by microbiological analysis and specimens were also processed for histomorphometry. Results. In PET/CT imaging, the SUVmax of 68Ga-chloride and 68Ga-citrate in the osteomyelitic tibias (3.6 ± 1.4 and 4.7 ± 1.5, resp. were significantly higher (P=0.0019 and P=0.0020, resp. than in the uncomplicated bone healing (2.7 ± 0.44 and 2.5 ± 0.49, resp.. In osteomyelitic tibias, the SUVmax of 68Ga-citrate was significantly higher than the uptake of 68Ga-chloride (P=0.0017. In animals with uncomplicated bone healing, no difference in the SUVmax of 68Ga-chloride or 68Ga-citrate was seen in the operated tibias. Conclusions. This study further corroborates the use of 68Ga-citrate for PET imaging of osteomyelitis.

  10. Dynamic water vapor sorption on Mg(Ga3+)O mixed oxides: Analysis of the LDH thermal regeneration process

    International Nuclear Information System (INIS)

    Bedolla-Valdez, Zaira I.; Ramirez-Solis, Sergio; Prince, Julia; Lima, Enrique; Pfeiffer, Heriberto; Valente, Jaime S.

    2013-01-01

    Highlights: ► Ga-LDH regeneration process was analyzed varying the relative humidity. ► Ga-LDH rehydrates faster than aluminum content LDH materials. ► Gallium seems to favor diffusion processeses during LDH regeneration. - Abstract: The rehydration process of the calcined MgGa-layered double hydroxides (Ga-LDH) was analyzed at different temperatures and relative humidities. Results clearly showed that Ga-LDH sample presented an excellent regeneration kinetic, in comparison to the aluminum typical one. Different techniques such as X-ray diffraction, infrared spectroscopy and thermal analysis were used to elucidate the presented results

  11. Dynamic water vapor sorption on Mg(Ga{sup 3+})O mixed oxides: Analysis of the LDH thermal regeneration process

    Energy Technology Data Exchange (ETDEWEB)

    Bedolla-Valdez, Zaira I.; Ramirez-Solis, Sergio [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito exterior s/n, Cd. Universitaria, Del. Coyoacán, CP 04510, México, DF (Mexico); Prince, Julia [Instituto Mexicano del Petróleo, Eje Central 152, CP 07730, México, DF (Mexico); Lima, Enrique [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito exterior s/n, Cd. Universitaria, Del. Coyoacán, CP 04510, México, DF (Mexico); Pfeiffer, Heriberto, E-mail: pfeiffer@iim.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito exterior s/n, Cd. Universitaria, Del. Coyoacán, CP 04510, México, DF (Mexico); Valente, Jaime S. [Instituto Mexicano del Petróleo, Eje Central 152, CP 07730, México, DF (Mexico)

    2013-02-10

    Highlights: ► Ga-LDH regeneration process was analyzed varying the relative humidity. ► Ga-LDH rehydrates faster than aluminum content LDH materials. ► Gallium seems to favor diffusion processeses during LDH regeneration. - Abstract: The rehydration process of the calcined MgGa-layered double hydroxides (Ga-LDH) was analyzed at different temperatures and relative humidities. Results clearly showed that Ga-LDH sample presented an excellent regeneration kinetic, in comparison to the aluminum typical one. Different techniques such as X-ray diffraction, infrared spectroscopy and thermal analysis were used to elucidate the presented results.

  12. 高级醇和烃类化合物含量对甲醇水混溶性的影响%Impact of the Contents of Higher Alcohols and Hydrocarbon Compounds of Methanol upon the Methanol-Water Compatibility

    Institute of Scientific and Technical Information of China (English)

    牟艳春

    2012-01-01

    基于工业甲醇中高级醇、烃类化合物与水以一定比例混合后澄清度的差异,在规定的条件下,利用气相色谱法,分析了高级醇、烃类化合物含量的高低对甲醇水混溶性的影响.试验结果表明:高级醇含量增加,甲醇的水混溶性变差;烃类物质含量越高,甲醇的水混溶性越差.%Methanol is an important and widely used raw material in basic organic chemistry. A gas chromatography test was done under specified conditions to show the impact of the amount of higher alcohol and hydrocarbon compounds upon the water compatibility of methanol. The result showed that the existence of higher alcohol and hydrocarbon compounds in methanol makes it not clear, which great affected the quality of the product, besides, it affected the adjustment of the process parameters.

  13. Synthesis and properties of γ-Ga2O3-Al2O3 solid solutions

    Science.gov (United States)

    Afonasenko, T. N.; Leont'eva, N. N.; Talzi, V. P.; Smirnova, N. S.; Savel'eva, G. G.; Shilova, A. V.; Tsyrul'nikov, P. G.

    2017-10-01

    The textural and structural properties of mixed oxides Ga2O3-Al2O3, obtained via impregnating γ-Al2O3 with a solution of Ga(NO3)3 and subsequent heat treatment, are studied. According to the results from X-ray powder diffraction, gallium ions are incorporated into the structure of aluminum oxide to form a solid solution of spinel-type γ-Ga2O3-Al2O3 up to a Ga2O3 content of 50 wt % of the total weight of the sample, accompanied by a reduction in the specific surface area, volume, and average pore diameter. It is concluded that when the Ga2O3 content exceeds 50 wt %, the β-Ga2O3 phase is observed along with γ-Ga2O3-Al2O3 solid solution. 71Ga and 27Al NMR spectroscopy shows that gallium replaces aluminum atoms from the tetrahedral position to the octahedral coordination in the structure of γ-Ga2O3-Al2O3.

  14. Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by metal-organic vapor phase epitaxy.

    Science.gov (United States)

    Klangtakai, Pawinee; Sanorpim, Sakuntam; Onabe, Kentaro

    2011-12-01

    Strained GaAsN T-junction quantum wires (T-QWRs) with different N contents grown on GaAs by two steps metal-organic vapor phase epitaxy in [001] and [110] directions, namely QW1 and QW2 respectively, have been investigated by photoreflectance (PR) spectroscopy. Two GaAsN T-QWRs with different N contents were formed by T-intersection of (i) a 6.4-nm-thick GaAs0.89N0.011 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2 and (ii) a 5.0-nm-thick GaAs0.985N0.015 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2. An evidence of a one-dimensional structure at T-intersection of the two QWs on the (001) and (110) surfaces was established by PR resonances associated with extended states in all the QW and T-QWR samples. It is found that larger lateral confinement energy than 100 meV in both of [001] and [110] directions were achieved for GaAsN T-QWRs. With increasing temperature, the transition energy of GaAsN T-QWRs decreases with a faster shrinking rate compared to that of bulk GaAs. Optical quality of GaAsN T-QWRs is found to be affected by the N-induced band edge fluctuation, which is the unique characteristic of dilute III-V-nitrides.

  15. Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Oshima, Yuichi; Ahmadi, Elaheh; Kaun, Stephen; Wu, Feng; Speck, James S.

    2018-01-01

    We investigated the homoepitaxial growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy. The growth rate of β-Ga2O3 increased with increasing Ga-flux, reaching a clear plateau of 56 nm h-1, and then decreased at higher Ga-flux. The growth rate decreased from 56 to 42 nm h-1 when the substrate temperature was increased from 750 °C to 800 °C. The growth rate was negative (net etching) when only Ga-flux was supplied. The etching rate proportionally increased with increasing the Ga-flux, reaching 84 nm h-1. The etching was enhanced at higher temperatures. It was found that Ga-etching of (001) β-Ga2O3 substrates prior to the homoepitaxial growth markedly improved the surface roughness of the film.

  16. Investigation of InGaN/GaN laser degradation based on luminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Pengyan; Zhang, Shuming, E-mail: smzhang2010@sinano.ac.cn; Liu, Jianping; Li, Deyao; Zhang, Liqun; Sun, Qian; Tian, Aiqin; Zhou, Kun; Yang, Hui [Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhou, Taofei [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China)

    2016-06-07

    Degradation of InGaN/GaN laser diode (LD) is investigated based on the luminescence properties. Gradual degradation of the LD is presented with the threshold current increase and the slope efficiency decrease. The cathodoluminescence and photoluminescence characterizations of the LD show a dislocation independent degradation of the active region under the ridge. Detailed studies on the temperature-dependent micro-photoluminescence and the electroluminescence indicate that the degradation of the LD is attributed to the generation of non-radiative recombination centers in the local multiple quantum well regions with lower indium content. The activation energy of the non-radiative recombination centers is about 10.2 meV.

  17. Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells

    International Nuclear Information System (INIS)

    Karcher, C.; Jandieri, K.; Kunert, B.; Fritz, R.; Volz, K.; Stolz, W.; Gebhard, F.; Baranovskii, S.D.; Heimbrodt, W.

    2013-01-01

    The compositional dependence of the properties of metastable Ga(N,As,P) has been characterized optically by means of temperature dependent absorptive and emissive techniques. By assuming a two-scaled disorder within the alloy caused by microscopic composition fluctuations on the one hand and a fluctuation of strain fields or the well width on the other hand, Monte Carlo simulations of the carrier dynamics are in good agreement with the experimental findings. The compositional dependence further reveals an increase of disorder with decreasing nitrogen content. - Highlights: ► Temperature dependent spectral dataset of two Ga(N,As,P)/ MQWs with varying composition. ► High resolution TEM study revealing height fluctuations within the triple QWs. ► Two distinct scales of disorder corresponding to two spatial length scales. ► Almost perfect Monte-Carlo simulations of the experimental findings. ► Theoretical explanation of the discovered reduction of disorder with increasing N.

  18. Spin injection from epitaxial Heusler alloy thin films into InGaAs/GaAs quantum wells

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad

    2006-01-01

    -stoichiometric crystals and crystals with site swapping defects. Significant decrease in the spin polarization has been predicted for disorder defects involving especially Co on Mn or Ga sites. From an estimate based on the calculated defect formation energies it is found that Mn on Co-sites are likely to exist...... no anisotropy is seen for near stoichiometry thin films on an ordinary GaAs surface. Typically thin films grown on GaAs show lower saturation magnetization than expected from bulk properties. The electrical characterizations have revealed resistivities around ρ = 350μΩcm at 300 K. Generally, the near...... to typically 0.02-0.1 Ωmm2 for Fe and Co contacts but two orders of magnitude higher for the Co2MnGa contacts. Point contact Andreev reflection measurements on an off-stoichiometric thin film (Co2.4Mn1.6Ga) show a spin polarization of P ≈ 50 %. Furthermore spin injection into a InGaAs/GaAs quantum well have...

  19. High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Posada Flores, F; Redondo-Cubero, A; Bengoechea, A; Brana, A F; Munoz, E [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM) and Dpto. IngenierIa Electronica (DIE), ETSI de Telecomunicacion, Universidad Politecnica de Madrid, E-28040 Madrid (Spain); Gago, R [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Jimenez, A [Dpto. Electronica, Escuela Politecnica Superior, Universidad de Alcala, E-28805 Alcala de Henares, Madrid (Spain); Grambole, D, E-mail: fposada@die.upm.e [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, PF 51019, D-01314 Dresden (Germany)

    2009-03-07

    Hydrogen (H) incorporation into AlGaN/GaN heterostructures used in high electron mobility transistors, grown by different methods, is studied by high-resolution depth profiling. Samples grown on sapphire and Si(1 1 1) substrates by molecular-beam epitaxy and metal-organic vapour phase epitaxy; involving H-free and H-containing precursors, were analysed to evaluate the eventual incorporation of H into the wafer. The amount of H was measured by means of nuclear reaction analysis (NRA) using the {sup 1}H({sup 15}N,{alpha}{gamma}){sup 12}C reaction up to a depth of {approx}110 nm into the heterostructures. Interestingly, the H profiles are similar in all the samples analysed, with an increasing H content towards the surface and a negligible H incorporation into the GaN layer (0.24 {+-} 0.08 at%) or at the AlGaN/GaN interface. Therefore, NRA shows that H uptake is not related to the growth process or technique employed and that H contamination may be due to external sources after growth. The eventual correlation between topographical defects on the AlGaN surface and the H concentration are also discussed.

  20. Electrical compensation by Ga vacancies in Ga2O3

    OpenAIRE

    Korhonen, Esa; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-01-01

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is n...

  1. Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

    Science.gov (United States)

    Chèze, C.; Feix, F.; Lähnemann, J.; Flissikowski, T.; Kryśko, M.; Wolny, P.; Turski, H.; Skierbiszewski, C.; Brandt, O.

    2018-01-01

    Previously, we found that N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C . This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially uniform green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.

  2. Optical and electronic properties of GaInNP alloys - a new material system for lattice matching to GaAs

    International Nuclear Information System (INIS)

    Buyanova, I.A.; Chen, W.M.; Tu, C.W.

    2008-01-01

    In this paper we review our recent results from optical characterization studies of GaInNP. We show that N incorporation in these alloys affects their structural and defect properties, as well as the electronic structure. The main structural changes include (i) increasing carrier localization due to strong compositional fluctuations, which is typical for all dilute nitrides, and (ii) N-induced long range ordering effects, specific for GaInNP. The observed degradation of radiative efficiency of the alloys upon increasing N content is attributed to formation of several defects acting as centres of efficient non-radiative recombination. One of the defects is identified as a complex involving a Ga interstitial atom. N incorporation is also found to change the band line up from the type I in the GaInP/GaAs structures to the type II in the GaInNP/GaAs heterojunctions with [N]>0.5%. For the range of N compositions studied ([N]≤2%), a conduction band offset at the GaInNP/GaAs interface is found to nearly linearly depend on [N] at -0.10 eV/%, whereas the valence band offset remains unaffected. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

    Science.gov (United States)

    Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

    2014-01-13

    N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

  4. Advertising Content

    OpenAIRE

    Simon P. Anderson; Régis Renault

    2002-01-01

    Empirical evidence suggests that most advertisements contain little direct informa- tion. Many do not mention prices. We analyze a firm'ss choice of advertising content and the information disclosed to consumers. A firm advertises only product informa- tion, price information, or both; and prefers to convey only limited product information if possible. Extending the "persuasion" game, we show that quality information takes precedence over price information and horizontal product information.T...

  5. ReGaTE: Registration of Galaxy Tools in Elixir

    DEFF Research Database (Denmark)

    Doppelt-Azeroual, Olivia; Mareuil, Fabien; Deveaud, Eric

    2017-01-01

    such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date...... of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE....

  6. Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate

    KAUST Repository

    Shen, Chao

    2014-01-01

    Segmented contact method was utilized to measure the gain and absorption spectra at below and above threshold for 420nm m-plane InGaN/GaN laser diode with a comparatively higher peak modal gain of 29.2 cm-1.

  7. Numerical analysis of In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS heterojunction solar cells

    International Nuclear Information System (INIS)

    Lin, Shuo; Li, Xirong; Pan, Huaqing; Chen, Huanting; Li, Xiuyan; Li, Yan; Zhou, Jinrong

    2016-01-01

    Highlights: • In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS solar cells are studied by numerical analysis. • Performances of In_xGa_1_−_xN/SnS solar cells enhanced with decreasing In content. • The electron barrier leads to the degraded efficiency of Al_xGa_1_−_xN/SnS solar cells. • GaN/SnS solar cell exhibits the highest efficiency 26.34%. - Abstract: In this work the photovoltaic properties of In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS heterojunction solar cells are studied by numerical analysis. The photovoltaic performances of In_xGa_1_−_xN/SnS solar cells are enhanced with the decreasing In content and the GaN/SnS solar cell exhibits the highest efficiency. The efficiencies of GaN/SnS solar cell improve with the increased SnS thickness and the reduced GaN thickness. For the Al_xGa_1_−_xN/SnS solar cells, there is electron barrier in the Al_xGa_1_−_xN/SnS interface. The electron barrier becomes larger with increasing Al content and lead to the degraded efficiency of Al_xGa_1_−_xN/SnS solar cells. The simulation contributes to designing and fabricating SnS solar cells.

  8. Epitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Saengkaew, Phannee

    2010-07-08

    {proportional_to}700 and {proportional_to}840 arcsec, respectively. The good optical qualities of Al{sub 0.1}Ga{sub 0.9}N and Al{sub 0.65}Ga{sub 0.35}N are presented with a low yellow luminescence and narrow nearbandgap emissions at 330 and 240 nm, respectively as determined by cathodoluminescence (CL) measurements. The maximum electron concentration of 2.6 x 10{sup 18} cm{sup -3} in n-type Al{sub 0.1}Ga{sub 0.9}N:Si layers and a hole concentration of 2.4 x 10{sup 17} cm{sup -3} of Mg-doped GaN/Al{sub 0.1}Ga{sub 0.9}N superlattices are achievable. These high-quality Al{sub x}Ga{sub 1-x}N materials with good optical and electrical properties are the main factors to accomplish AlGaN-based UV-LEDs on Si(111) substrates. It is demonstrated that it is also a promising approach to achieve deep UV-LEDs on Si substrates with a higher Al content layers. (orig.)

  9. In vitro corrosion properties and cytocompatibility of Fe-Ga alloys as potential biodegradable metallic materials

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Henan; Zheng, Yang; Liu, Jinghua; Jiang, Chengbao; Li, Yan, E-mail: liyan@buaa.edu.cn

    2017-02-01

    The in vitro biodegradable properties and cytocompatibility of Fe-Ga alloys including Fe{sub 81}Ga{sub 19}, (Fe{sub 81}Ga{sub 19}){sub 98}B{sub 2} and (Fe{sub 81}Ga{sub 19}){sub 99.5}(TaC){sub 0.5}, and pure Fe were investigated for biomedical applications. The microstructure of the alloys was characterized using X-ray diffraction spectroscopy and optical microscopy. The results showed that A2 and D0{sub 3} phases were detected for the three types of Fe-Ga alloys, and additional Fe{sub 2}B and TaC phases were found in the (Fe{sub 81}Ga{sub 19}){sub 98}B{sub 2} and (Fe{sub 81}Ga{sub 19}){sub 99.5}(TaC){sub 0.5} alloys, respectively. The corrosion rates of the Fe-Ga alloys were higher than that of pure Fe, as demonstrated by both potentiodynamic polarization measurements and immersion tests in simulated body fluid. The alloying element Ga lowered the corrosion potential of the Fe matrix and made it more susceptible to corrosion. Severe pitting corrosion developed on the surface of the Fe{sub 81}Ga{sub 19} alloy after the addition of ternary B or TaC due to the multi-phase microstructures. The MC3T3-E1 cells exhibited good adhesion and proliferation behavior on the surfaces of the Fe-Ga alloys after culture for 4 h and 24 h. - Highlights: • Fe-Ga alloys showed a higher degradation rate than pure Fe. • Fe-Ga alloys exhibited good cytocompatibility for the MC3T3-E1 cells. • The MC3T3-E1 cells were tolerable to the corrosion products of Fe-Ga alloys.

  10. Czech Higher Education Still at the Crossroads

    Czech Academy of Sciences Publication Activity Database

    Matějů, Petr; Simonová, Natalie

    -, - (2005), s. 1-15 R&D Projects: GA AV ČR(CZ) IBS7028302 Institutional research plan: CEZ:AV0Z70280505 Keywords : czech higher education * autonomy of universities Subject RIV: AO - Sociology, Demography http://www.cee-socialscience.net/archive/interdisciplinary/czech/article1.html

  11. Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor

    International Nuclear Information System (INIS)

    Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Isemura, Masashi

    2015-01-01

    In this study, we performed growth of GaN layers using Ga 2 O vapor synthesized from Ga and H 2 O vapor. In this process, we employed H 2 O vapor instead of HCl gas in hydride vapor phase epitaxy (HVPE) to synthesize Ga source gas. In the synthesis reaction of Ga 2 O, a Ga 2 O 3 whisker formed and covered Ga, which impeded the synthesis reaction of Ga 2 O. The formation of the Ga 2 O 3 whisker was suppressed in H 2 ambient at high temperatures. Then, we adopted this process to supply a group III precursor and obtained an epitaxial layer. X-ray diffraction (XRD) measurement revealed that the epitaxial layer was single-crystalline GaN. Growth rate increased linearly with Ga 2 O partial pressure and reached 104 µm/h. (author)

  12. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    International Nuclear Information System (INIS)

    He, Xiaoguang; Zhao, Degang; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-01-01

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  13. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-06-15

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  14. Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis

    Science.gov (United States)

    Shirazi-HD, M.; Diaz, R. E.; Nguyen, T.; Jian, J.; Gardner, G. C.; Wang, H.; Manfra, M. J.; Malis, O.

    2018-04-01

    AlxGa1-xN layers with Al-composition above 0.6 (0.6 < x < 0.9) grown under metal-rich conditions by plasma-assisted molecular beam epitaxy on m-plane GaN miscut towards the -c axis are kinetically unstable. Even under excess Ga flux, the effective growth rate of AlGaN is drastically reduced, likely due to suppression of Ga-N dimer incorporation. The defect structure generated during these growth conditions is studied with energy dispersive x-ray spectroscopy scanning transmission electron microscopy as a function of Al flux. The AlGaN growth results in the formation of thin Al(Ga)N layers with Al-composition higher than expected and lower Al-composition AlGaN islands. The AlGaN islands have a flat top and are elongated along the c-axis (i.e., stripe-like shape). Possible mechanisms for the observed experimental results are discussed. Our data are consistent with a model in which Al-N dimers promote release of Ga-N dimers from the m-plane surface.

  15. Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

    International Nuclear Information System (INIS)

    Kirste, Lutz; Lim, Taek; Aidam, Rolf; Mueller, Stefan; Waltereit, Patrick; Ambacher, Oliver

    2010-01-01

    A high-resolution X-ray diffraction and X-ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al 2 O 3 and GaN/SiC templates is presented. A new AlN/GaN/AlN triple-interlayer is implemented to improve the interface properties between barrier layer and GaN buffer for a higher mobility of the polarization induced two-dimensional electron gas. Layer properties and structural parameters like concentration, interface quality, layer thickness, strain and crystalline perfection are analyzed. Best structural properties are achieved for an AlGaInN layer with AlN/GaN/AlN interlayer deposited on a GaN/4H-SiC (00.1) template. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  16. Assessment of Ga2O3 technology

    Science.gov (United States)

    2016-09-15

    this article has given the emerging technology of GaN a valuable push in term of encouragement to stay with it while the painful technology development...Ga2O3 α-Ga2O3 β-Ga2O3 β-Ga2O3 β-Ga2O3 poly - Ga2O3 β-Ga2O3 Epi-layer Growth Method MBE (ozone) MBE (ozone) MBE (ozone) Mist-CVD MBE (ozone... pains to treat the wafer surface with BCl3 RIE to create charges at the interface. The gate contact was also barely a Schottky contact evidenced by

  17. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  18. Radiosensitivity of higher plants

    International Nuclear Information System (INIS)

    Feng Zhijie

    1992-11-01

    The general views on radiosensitivity of higher plants have been introduced from published references. The radiosensitivity varies with species, varieties and organs or tissues. The main factors of determining the radiosensitivity in different species are nucleus volume, chromosome volume, DNA content and endogenous compounds. The self-repair ability of DNA damage and chemical group of biological molecules, such as -SH thiohydroxy of proteins, are main factors to determine the radiosensitivity in different varieties. The moisture, oxygen, temperature radiosensitizer and protector are important external factors for radiosensitivity. Both the multiple target model and Chadwick-Leenhouts model are ideal mathematical models for describing the radiosensitivity of higher plants and the latter has more clear significance in biology

  19. Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

    Science.gov (United States)

    Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

    2015-01-01

    We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

  20. High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surface

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Young-Bae; Naoi, Yoshiki; Sakai, Shiro [Department of Electrical and Electronic Engineering, University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506 (Japan); Takaki, Ryohei; Sato, Hisao [Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360 (Japan)

    2003-11-01

    We have studied a new method of increasing the extraction efficiency of a GaN-based light-emitting diode (LED) using a plasma surface treatment. In this method, prior to the evaporation of a semitransparent p-metal, the surface of a p-GaN located beneath a p-pad is selectively exposed to a nitrogen plasma in a reactive ion etching (RIE) chamber. The electrical characteristics of the plasma treated p-GaN remarkably changes its resistivity into semi-insulator without any parasitic damage. Since the LEDs with a new method have no light absorption in a p-pad region, a higher optical power can be extracted compared to a conventional LEDs without plasma selective treatment on the p-GaN surface. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Optical-absorption spectra associated with shallow donor impurities in GaAs-(Ga,Al)As quantum-dots

    International Nuclear Information System (INIS)

    Silva Valencia, J.

    1995-08-01

    The binding energy of a hydrogenic donor impurity and the optical-absorption spectra associated with transitions between the n=1 valence level and the donor-impurity band were calculated for infinite barrier-well spherical GaAs-(Ga,Al)As quantum-dots of different radii, using the effective mass approximation within a variational scheme. An absorption peak associated with transitions involving impurities at the center of the well and a peak related with impurities at the edge of the dot were the main features observed for the different radii of the dots considered in the calculations. Also as a result of the higher electronic confinement in a quantum- dot, we found a much wider energy range of the absorption spectra when compared to infinite GaAs-(Ga,Al)As quantum-wells and quantum-well wires of width and diameter comparable to the diameter of the quantum dot. (author). 13 refs, 3 figs

  2. Antisites and anisotropic diffusion in GaAs and GaSb

    KAUST Repository

    Tahini, H. A.

    2013-10-02

    The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.

  3. Wide bandgap engineering of (AlGa)2O3 films

    International Nuclear Information System (INIS)

    Zhang, Fabi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Arita, Makoto

    2014-01-01

    Bandgap tunable (AlGa) 2 O 3 films were deposited on sapphire substrates by pulsed laser deposition (PLD). The deposited films are of high transmittance as measured by spectrophotometer. The Al content in films is almost the same as that in targets. The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy is proved to be valid for determining the bandgap of (AlGa) 2 O 3 films as it is in good agreement with the bandgap values from transmittance spectra. The measured bandgap of (AlGa) 2 O 3 films increases continuously with the Al content covering the whole Al content range from about 5 to 7 eV, indicating PLD is a promising growth technology for growing bandgap tunable (AlGa) 2 O 3 films.

  4. GA microwave window development

    International Nuclear Information System (INIS)

    Moeller, C.P.; Kasugai, A.; Sakamoto, K.; Takahashi, K.

    1994-10-01

    The GA prototype distributed window was tested in a 32 mm diam. waveguide system at a power density suitable for a MW gyrotron, using the JAERI/Toshiba 110 GHz long pulse internal converter gyrotron in the JAERI test stand. The presence of the untilted distributed window had no adverse effect on the gyrotron operation. A pulse length of 10 times the calculated thermal equilibrium time (1/e time) of 30 msec was reached, and the window passed at least 750 pulses greater than 30 msec and 343 pulses greater than 60 msec. Beyond 100 msec, the window calorimetry reached steady state, allowing the window dissipation to be measured in a single pulse. The measured loss of 4.0% agrees both with the estimated loss, on which the stress calculations are based, and with the attenuation measured at low power in the HE 11 mode. After the end of the tests, the window was examined; no evidence of arcing air coating was found in the part of the window directly illuminated by the microwaves, although there was discoloration in a recess containing an optical diagnostic which outgassed, causing a local discharge to occur in that recess. Finally, there was no failure of the metal-sapphire joints during a total operating time of 50 seconds consisting of pulses longer than 30 msec

  5. Optical and electronic properties of AlGaN/GaN heterostructures; Optische und elektronische Eigenschaften von AlGaN/GaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Winzer, Andreas T.

    2008-10-28

    The electronic material properties of AlGaN/GaN heterostructures were investigated. The analysis of optical spectra by complex models allowed for the first time to confirm the theoretically predicted dependence of the polarisation discontinuity (also called polarisation charge) on the Al content by reliable experiments. Furthermore, it is shown that the polarisation discontinuity is constant over the temperature range from 5 K up to room temperature. The method employed here is based on the analysis of electroreflectance (ER) spectra and exploits the specific dependence of the electric field strength within a layer on the applied electric voltage. In this work this method is consequently refined to surpass all alternative methods in accuracy. ER spectra of group-III-nitrides posses some general peculiarities: (i) In di- rect proximity to the band gap they can not be described by constant Seraphin coefficients in contrast to small gap semiconductors (e.g. GaAs). (ii) Though, the analysis of the Franz-Keldysh oscillations by Aspnes' method yields the correct values of the electric field strength as it is the case for small gap semiconductors. Optical and especially ER spectra of group-III-nitrides can only be described completely by taking into account for excitons in electric fields. For this a mo- del proposed by Blossey was applied to nitride semiconductors and implemented into a software program. By extensive numerical simulations it was found that the energetic position of the exciton main resonance as well as its spectral width depend linearly on the electric field strength. The approach presented is unique since it allows for a quantitative description of excitons in inhomogeneous electric fields. The good agreement between experiment and simulation supports the reliability of the material properties presented in this work. The operation of AlGaN/GaN heterostructures as chemical sensors was investigated by means of optical spectra too. If Pt contacted

  6. In vitro corrosion properties and cytocompatibility of Fe-Ga alloys as potential biodegradable metallic materials.

    Science.gov (United States)

    Wang, Henan; Zheng, Yang; Liu, Jinghua; Jiang, Chengbao; Li, Yan

    2017-02-01

    The in vitro biodegradable properties and cytocompatibility of Fe-Ga alloys including Fe 81 Ga 19 , (Fe 81 Ga 19 ) 98 B 2 and (Fe 81 Ga 19 ) 99.5 (TaC) 0.5 , and pure Fe were investigated for biomedical applications. The microstructure of the alloys was characterized using X-ray diffraction spectroscopy and optical microscopy. The results showed that A2 and D0 3 phases were detected for the three types of Fe-Ga alloys, and additional Fe 2 B and TaC phases were found in the (Fe 81 Ga 19 ) 98 B 2 and (Fe 81 Ga 19 ) 99.5 (TaC) 0.5 alloys, respectively. The corrosion rates of the Fe-Ga alloys were higher than that of pure Fe, as demonstrated by both potentiodynamic polarization measurements and immersion tests in simulated body fluid. The alloying element Ga lowered the corrosion potential of the Fe matrix and made it more susceptible to corrosion. Severe pitting corrosion developed on the surface of the Fe 81 Ga 19 alloy after the addition of ternary B or TaC due to the multi-phase microstructures. The MC3T3-E1 cells exhibited good adhesion and proliferation behavior on the surfaces of the Fe-Ga alloys after culture for 4h and 24h. Copyright © 2016 Elsevier B.V. All rights reserved.

  7. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Koo, Sang-Mo; Kang, Min-Seok

    2014-01-01

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV th = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10 7 A/cm 2 ) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10 7 A/cm 2 ). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration

  8. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Sang-Mo, E-mail: smkoo@kw.ac.kr; Kang, Min-Seok, E-mail: hyde0220@gmail.com

    2014-10-15

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV{sub th} = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10{sup 7} A/cm{sup 2}) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10{sup 7} A/cm{sup 2}). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration.

  9. Optical response of confined excitons in GaInAsSb/GaSb Quantum Dots heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Cano, R [Departamento de Fisica, Universidad Autonoma de Occidente, A.A. 2790, Cali (Colombia); Tirado-Mejia, L; Fonthal, G; Ariza-Calderon, H [Laboratorio de Optoelectronica, Universidad del Quindio, A.A. 4603 Armenia (Colombia); Porras-Montenegro, N, E-mail: rsanchez40@gmail.co [Departamento de Fisica, Universidad del Valle, A.A. 25360, Cali (Colombia)

    2009-05-01

    The narrow-gap Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. In these compounds grown by liquid phase epitaxy over GaSb single crystals, for x and y values in the range of 0.10 to 0.14 for both variables, the photoluminescence optical response at 12K is blue-shifted by 20 meV related to the photoreflectance response. We believe this behavior is due to possible higher electronic confinement in some places of the heterostructure, possibly formed in the interface during the growth process. In order to explain this behavior, in this work we study the exciton recombination energy in spherical Quantum Dots (QDs) on Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, using the variational procedure within the effective-mass approximation and considering an electron in a Type I band alignment formed by two semiconductors with similar parabolic conduction bands. Our results are in good agreement with recent experimental results.

  10. Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

    KAUST Repository

    Alshehri, Bandar

    2016-06-07

    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

  11. Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells

    International Nuclear Information System (INIS)

    Hsu, H P; Sitarek, P; Huang, Y S; Liu, P W; Lin, J M; Lin, H H; Tiong, K K

    2006-01-01

    The effects of growth interruption times combined with Sb exposure of GaAsSb/GaAs multiple quantum wells (MQWs) have been investigated by using phototransmittance (PT), contactless electroreflectance (CER) and wavelength modulated surface photovoltage spectroscopy (WMSPS). The features originated from different portions of the samples, including interband transitions of MQWs, interfaces and GaAs, are observed and identified through a detailed comparison of the obtained spectra and theoretical calculation. A red-shift of the interband transitions and a broader lineshape of the fundamental transition are observed from samples grown under Sb exposure compared to the reference sample grown without interruption. The results can be interpreted in terms of both increases in Sb content and mixing of Sb in the GaAs interface layers. An additional feature has been observed below the GaAs region in the samples with Sb treatment. The probable origin of this additional feature is discussed

  12. Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

    KAUST Repository

    Alshehri, Bandar; Dogheche, Karim; Belahsene, Sofiane; Janjua, Bilal; Ramdane, Abderrahim; Patriarche, Gilles; Ng, Tien Khee; S-Ooi, Boon; Decoster, Didier; Dogheche, Elhadj

    2016-01-01

    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

  13. Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

    International Nuclear Information System (INIS)

    Yang, W. C.; Wu, C. H.; Tseng, Y. T.; Chiu, S. Y.; Cheng, K. Y.

    2015-01-01

    The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation

  14. BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

    Science.gov (United States)

    Williams, Logan; Kioupakis, Emmanouil

    2017-11-01

    InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, high-efficiency visible LEDs with thick active regions. In this work, we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75-3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.

  15. The Glycated Albumin (GA) to HbA1c Ratio Reflects Shorter-Term Glycemic Control than GA: Analysis of Patients with Fulminant Type 1 Diabetes.

    Science.gov (United States)

    Koga, Masafumi; Inada, Shinya; Nakao, Taisei; Kawamori, Ryuzo; Kasayama, Soji

    2017-01-01

    Glycated albumin (GA) reflects shorter-term glycemic control than HbA1c. We have reported that HbA1c is paradoxically increased in diabetic patients whose glycemic control deteriorated before ameliorating. In this study, we analyzed paradoxical increases of glycemic control indicators after treatment in patients with fulminant type 1 diabetes (FT1D). We also investigated whether the GA/HbA1c ratio may reflect shorter-term glycemic control than GA. Five FT1D patients whose post-treatment HbA1c and GA levels were measured were enrolled. We also used a formula to estimate HbA1c and GA from the fictitious models of changes in plasma glucose in FT1D patients. In this model, the periods during which HbA1c, GA, and the GA/HbA1c ratio were higher than at the first visit were compared. In addition, the half-life for the GA/HbA1c ratio was calculated in accordance with the half-lives for HbA1c and GA (36 and 14 days, respectively). In all FT1D patients, HbA1c levels 2-4 weeks after treatment were increased, with three patients (60%) experiencing an increase of GA levels. In contrast, an increase of the GA/HbA1c ratio was observed in only one patient. In all of the different models of changes in plasma glucose in FT1D patients, the length of time during which the values were higher than at the first visit was in the order of HbA1c > GA > GA/HbA1c ratio. The half-life for the GA/HbA1c ratio was 9 days, shorter than GA. These findings suggest that the GA/HbA1c ratio reflects shorter-term glycemic control than GA. © 2016 Wiley Periodicals, Inc.

  16. Comparison of Ga-68 DOTA-TATE and Ga-68 DOTA-LAN PET/CT imaging in the same patient group with neuroendocrine tumours: preliminary results.

    Science.gov (United States)

    Demirci, Emre; Ocak, Meltem; Kabasakal, Levent; Araman, Ahmet; Ozsoy, Yildiz; Kanmaz, Bedii

    2013-08-01

    Ga-68-DOTA-TATE seems to be superior to that obtained by Ga-68 DOTA-LAN. With its significantly higher lesion uptake and higher ability to detect lesions, Ga-68-DOTA-TATE seems to be a better radioligand compared with Ga-68-DOTA-LAN for the diagnosis of NETs.

  17. Fabrication of a Cu(InGaSe2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

    Directory of Open Access Journals (Sweden)

    Chun-Yao Hsu

    2013-01-01

    Full Text Available Cu(InGaSe2 (CIGS thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA, by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2 plane. A Cu-poor precursor with a Cu/( ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ratio of 1.15 exhibits an inappropriate second phase ( in the absorber. However, the precursor with a Cu/( ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.

  18. The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy

    KAUST Repository

    Ng, Tien Khee

    2014-03-08

    We report on the properties and growth kinetics of defect-free, photoluminescence (PL) efficient mushroom-like nanowires (MNWs) in the form of ~30nm thick hexagonal-shaped InGaN-nanodisk on GaN nanowires, coexisting with the conventional rod-like InGaN-on-GaN nanowires (RNWs) on (111)-silicon-substrate. When characterized using confocal microscopy (CFM) with 458nm laser excitation, while measuring spontaneous-emission at fixed detection wavelengths, the spatial intensity map evolved from having uniform pixelated emission, to having only an emission ring, and then a round emission spot. This corresponds to the PL emission with increasing indium composition; starting from emission mainly from the RNW, and then the 540 nm emission from one MNWs ensemble, followed by the 590 nm emission from a different MNW ensemble, respectively. These hexagonal-shaped InGaN-nano-disks ensembles were obtained during molecular-beam-epitaxy (MBE) growth. On the other hand, the regular rod-like InGaN-on-GaN nanowires (RNWs) were emitting at a shorter peak wavelength of 490 nm. While the formation of InGaN rod-like nanowire is well-understood, the formation of the hexagonal-shaped InGaN-nanodisk-on-GaN-nanowire requires further investigation. It was postulated to arise from the highly sensitive growth kinetics during plasma-assisted MBE of InGaN at low temperature, i.e. when the substrate temperature was reduced from 800 °C (GaN growth) to <600 °C (InGaN growth), during which sparsely populated metal-droplet formation prevails and further accumulated more indium adatoms due to a higher cohesive bond between metallic molecules. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  19. Ga2O3単結晶の育成と特性評価

    OpenAIRE

    龍見, 雅美; Tatsumi, Masami; 川田, 真聖; Kawada, Masahiro; 織田, 隆大; Oda, Takahiro

    2011-01-01

    β-Ga2O3 single crystal is promising for the substrate of GaN LED. The single crystals were grown by using Floating Zone method. Doping of Si revealed possibilities of suppressing the cracking along cleavage plane and reducing the electrical resistivity, which were essential to the practical use. EL device by using Cr-dopedβ-Ga2O3 showed the electro luminescence at the wave length of around 690 nm under higher than 80 voltage.

  20. /sup 67/Ga lung scan

    Energy Technology Data Exchange (ETDEWEB)

    Niden, A.H.; Mishkin, F.S.; Khurana, M.M.L.; Pick, R.

    1977-03-21

    Twenty-three patients with clinical signs of pulmonary embolic disease and lung infiltrates were studied to determine the value of gallium citrate /sup 67/Ga lung scan in differentiating embolic from inflammatory lung disease. In 11 patients without angiographically proved embolism, only seven had corresponding ventilation-perfusion defects compatible with inflammatory disease. In seven of these 11 patients, the /sup 67/Ga concentration indicated inflammatory disease. In the 12 patients with angiographically proved embolic disease, six had corresponding ventilation-perfusion defects compatible with inflammatory disease. None had an accumulation of /sup 67/Ga in the area of pulmonary infiltrate. Thus, ventilation-perfusion lung scans are of limited value when lung infiltrates are present. In contrast, the accumulation of /sup 67/Ga in the lung indicates an inflammatory process. Gallium imaging can help select those patients with lung infiltrates who need angiography.

  1. The effect of synthetic method and annealing temperature on metal site preference in Al(1-x)Ga(x)FeO3.

    Science.gov (United States)

    Walker, James D S; Grosvenor, Andrew P

    2013-08-05

    Magnetoelectric materials couple both magnetic and electronic properties, making them attractive for use in multifunctional devices. The magnetoelectric AFeO3 compounds (Pna2(1); A = Al, Ga) have received attention as the properties of the system depend on composition as well as the synthetic method used. Al(1-x)Ga(x)FeO3. (0 ≤ x ≤ 1) was synthesized by the sol-gel and coprecipitation methods and studied by X-ray absorption near-edge spectroscopy (XANES). Al L(2,3-), Ga K-, and Fe K-edge XANES spectra were collected to examine how the average metal coordination number (CN) changes with the synthetic method. Al and Fe were found to prefer octahedral sites, while Ga prefers the tetrahedral site. It was found that composition played a larger role in determining site occupancies than synthetic method. Samples made by the sol-gel or ceramic methods (reported previously; Walker, J. D. S.; Grosvenor, A. P. J. Solid State Chem. 2013, 197, 147-153) showed smaller spectral changes than samples made via the coprecipitation method. This is attributed to greater ion mobility in samples synthesized via coprecipitation as the reactants do not have a long-range polymeric or oxide network during synthesis like samples synthesized via the sol-gel or ceramic method. Increasing annealing temperature increases the average coordination number of Al, and to a lesser extent Ga, while the average coordination number of Fe decreases. This study indicates that greater disorder is observed when the Al(1-x)Ga(x)FeO3. compounds have high Al content, and when annealed at higher temperatures.

  2. Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Laukkanen, P., E-mail: pekka.laukkanen@utu.fi [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Punkkinen, M.P.J., E-mail: marko.punkkinen@utu.fi [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Lahti, A. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Puustinen, J. [Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland); Tuominen, M. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Hilska, J. [Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland); Mäkelä, J.; Dahl, J.; Yasir, M. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Kuzmin, M. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation (Russian Federation); Osiecki, J.R.; Schulte, K. [The MAX IV laboratory, P. O. Box 118, Lund University, SE-221 00 Lund (Sweden); Guina, M. [Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland); Kokko, K. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)

    2017-02-28

    Highlights: • XPS is used to study bulk-like properties of GaAsBi crystals. • Surface effects are removed from XPS signal by an epitaxial AlAs cap film. • Local variation of Bi composition is found. • The result is consistent with photoluminescence and theoretical results. • Ga vacancies and Bi crystallites are suggested to be dominating defects. - Abstract: Epitaxial Bi-containing III–V crystals (III-V{sub 1-x}Bi{sub x}) have attracted increasing interest due to their potential in infrared applications. Atomic-scale characterization and engineering of bulk-like III-V{sub 1-x}Bi{sub x} properties (e.g., Bi incorporation and defect formation) are challenging but relevant to develop applications. Toward that target, we report here that the traditional surface-science measurement of photoelectron spectroscopy (PES) is a potential, non-destructive method to be combined in the studies of bulk-like properties, when surface effects are properly removed. We have investigated epitaxial GaAs{sub 1-x}Bi{sub x} films, capped by epitaxial AlAs layers, with high-resolution photoelectron spectroscopy. The Bi5d core-level spectra of GaAs{sub 1-x}Bi{sub x} together with ab-initio calculations give direct evidence of variation of Bi bonding environment in the lattice sites. The result agrees with photoluminescence (PL) measurement which shows that the studied GaAs{sub 1-x}Bi{sub x} films include local areas with higher Bi content, which contribute to PL but do not readily appear in x-ray diffraction (XRD). The measured and calculated Bi core-level shifts show also that Ga vacancies and Bi clusters are dominant defects.

  3. Shear deformation and relaxed lattice constant of (Ga,Mn)As layers on GaAs(113)A

    Energy Technology Data Exchange (ETDEWEB)

    Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany)

    2008-07-01

    The shear deformation and the relaxed lattice constant of compressively strained (Ga,Mn)As layers with Mn concentrations of up to 5%, pseudomorphically grown on GaAs(113)A and GaAs(001) substrates by low-temperature molecular-beam epitaxy, have been studied by high resolution X-ray diffraction (HRXRD) measurements. Rocking curves reveal a triclinic distortion of the (113)A layers with a shear direction towards the [001] crystallographic axis, whereas the (001) layers are tetragonally distorted along [001]. The relaxed lattice constants were derived from {omega}-2{theta} scans for the symmetric (113) and (004) Bragg reflections, taking the elastic anisotropy of the cubic system into account. The increase of the lattice constant with Mn content has been found to be smaller for the (113)A layers than for the (001) layers, presumably due to the enhanced amount of excess As in the (113)A layers.

  4. High-Sensitivity GaN Microchemical Sensors

    Science.gov (United States)

    Son, Kyung-ah; Yang, Baohua; Liao, Anna; Moon, Jeongsun; Prokopuk, Nicholas

    2009-01-01

    Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

  5. Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

    Science.gov (United States)

    Wang, Dong-Sheng; Zhang, Ke-Xiong; Liang, Hong-Wei; Song, Shi-Wei; Yang, De-Chao; Shen, Ren-Sheng; Liu, Yang; Xia, Xiao-Chuan; Luo, Ying-Min; Du, Guo-Tong

    2014-02-01

    Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-GaN micro-rods are formed above the interface of p-AlGaN/p-GaN due to the rapid growth rate of p-GaN in the vertical direction. The p-GaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electroluminescence intensities of the 372 nm UV LED lamps with p-GaN micro rods are 88% higher than those of the flat surface LED samples.

  6. Efficient photoelectrochemical water splitting by a doping-controlled GaN photoanode coated with NiO cocatalyst

    International Nuclear Information System (INIS)

    Kang, Jin-Ho; Kim, Soo Hee; Ebaid, Mohamed; Lee, June Key; Ryu, Sang-Wan

    2014-01-01

    Efficient photoelectrochemical (PEC) water splitting was demonstrated by a doping-controlled GaN photoanode coated with NiO cocatalyst. Highly doped n-GaN was sandwiched between undoped GaN layers to effectively collect electrons through ohmic contact. With zero external bias, the photocurrent density of the optimized doping profile was ∼3.5 times higher than that of the undoped GaN reference. However, the increased doping concentration degraded the photoanode stability, which was attributed to crystalline defects generated in the highly doped n-GaN. NiO cocatalyst improved the long-term stability of the photoanode because of GaN/NiO band alignment, enhancing hole transport into NiO and suppressing PEC corrosion mediated by hole crowding in GaN. This work established a design strategy for increasing the photocurrent as well as improving stability during water splitting with a GaN-based photoanode

  7. First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

    Science.gov (United States)

    Sekiguchi, K.; Shirakawa, H.; Yamamoto, Y.; Araidai, M.; Kangawa, Y.; Kakimoto, K.; Shiraishi, K.

    2017-06-01

    We analyzed the decomposition mechanisms of trimethylgallium (TMG) used for the gallium source of GaN fabrication based on first-principles calculations and thermodynamic analysis. We considered two conditions. One condition is under the total pressure of 1 atm and the other one is under metal organic vapor phase epitaxy (MOVPE) growth of GaN. Our calculated results show that H2 is indispensable for TMG decomposition under both conditions. In GaN MOVPE, TMG with H2 spontaneously decomposes into Ga(CH3) and Ga(CH3) decomposes into Ga atom gas when temperature is higher than 440 K. From these calculations, we confirmed that TMG surely becomes Ga atom gas near the GaN substrate surfaces.

  8. Water Content of Lunar Alkali Fedlspar

    Science.gov (United States)

    Mills, R. D.; Simon, J. I.; Wang, J.; Alexander, C. M. O'D.; Hauri, E. H.

    2016-01-01

    Detection of indigenous hydrogen in a diversity of lunar materials, including volcanic glass, melt inclusions, apatite, and plagioclase suggests water may have played a role in the chemical differentiation of the Moon. Spectroscopic data from the Moon indicate a positive correlation between water and Th. Modeling of lunar magma ocean crystallization predicts a similar chemical differentiation with the highest levels of water in the K- and Th-rich melt residuum of the magma ocean (i.e. urKREEP). Until now, the only sample-based estimates of water content of KREEP-rich magmas come from measurements of OH, F, and Cl in lunar apatites, which suggest a water concentration of alkali feldspar, a common mineral in K-enriched rocks, can have approx. 20 ppm of water, which implies magmatic water contents of approx. 1 wt % in the high-silica magmas. This estimate is 2 to 3 orders of magnitude higher than that estimated from apatite in similar rocks. However, the Cl and F contents of apatite in chemically similar rocks suggest that these melts also had high Cl/F ratios, which leads to spuriously low water estimates from the apatite. We can only estimate the minimum water content of urKREEP (+ bulk Moon) from our alkali feldspar data because of the unknown amount of degassing that led to the formation of the granites. Assuming a reasonable 10 to 100 times enrichment of water from urKREEP into the granites produces an estimate of 100-1000 ppm of water for the urKREEP reservoir. Using the modeling of and the 100-1000 ppm of water in urKREEP suggests a minimum bulk silicate Moon water content between 2 and 20 ppm. However, hydrogen loss was likely very significant in the evolution of the lunar mantle. Conclusions: Lunar granites crystallized between 4.3-3.8 Ga from relatively wet melts that degassed upon crystallization. The formation of these granites likely removed significant amounts of water from some mantle source regions, e.g. later mare basalts predicting derivation from a

  9. Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

    Science.gov (United States)

    Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

    2016-03-01

    Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

  10. Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

    Science.gov (United States)

    Takatsu, J.; Fuji, R.; Tatebayashi, J.; Timmerman, D.; Lesage, A.; Gregorkiewicz, T.; Fujiwara, Y.

    2018-04-01

    We report on the growth and optical properties of Tm-doped AlGaN layers by organometallic vapor phase epitaxy (OMVPE). The morphological and optical properties of Tm-doped GaN (GaN:Tm) and Tm-doped AlGaN (AlGaN:Tm) were investigated by Nomarski differential interference contrast microscopy and photoluminescence (PL) characterization. Nomarski images reveal an increase of surface roughness upon doping Tm into both GaN and AlGaN layers. The PL characterization of GaN:Tm shows emission in the near-infrared range originating from intra-4f shell transitions of Tm3+ ions. In contrast, AlGaN:Tm also exhibits blue light emission from Tm3+ ions. In that case, the wider band gap of the AlGaN host allows energy transfer to higher states of the Tm3+ ions. With time-resolved PL measurements, we could distinguish three types of luminescent sites of Tm3+ in the AlGaN:Tm layer, having different decay times. Our results confirm that Tm ions can be doped into GaN and AlGaN by OMVPE, and show potential for the fabrication of novel high-color-purity blue light emitting diodes.

  11. Unusual crystallization behavior in Ga-Sb phase change alloys

    Directory of Open Access Journals (Sweden)

    Magali Putero

    2013-12-01

    Full Text Available Combined in situ X-ray scattering techniques using synchrotron radiation were applied to investigate the crystallization behavior of Sb-rich Ga-Sb alloys. Measurements of the sheet resistance during heating indicated a reduced crystallization temperature with increased Sb content, which was confirmed by in situ X-ray diffraction. The electrical contrast increased with increasing Sb content and the resistivities in both the amorphous and crystalline phases decreased. It was found that by tuning the composition between Ga:Sb = 9:91 (in at.% and Ga:Sb = 45:55, the change in mass density upon crystallization changes from an increase in mass density which is typical for most phase change materials to a decrease in mass density. At the composition of Ga:Sb = 30:70, no mass density change is observed which should be very beneficial for phase change random access memory (PCRAM applications where a change in mass density during cycling is assumed to cause void formation and PCRAM device failure.

  12. Comparison of {sup 68}Ga-DOTATATE and {sup 68}Ga-DOTANOC PET/CT imaging in the same patient group with neuroendocrine tumours

    Energy Technology Data Exchange (ETDEWEB)

    Kabasakal, Levent [Istanbul University, Department of Nuclear Medicine, Cerrahpasa Medical Faculty, Istanbul (Turkey); Cerrahpasa Tip Fakultesi, Nukleer Tip Anabilim Dali, Aksaray, Istanbul (Turkey); Demirci, Emre; Uslu, Ilhami; Kanmaz, Bedii [Istanbul University, Department of Nuclear Medicine, Cerrahpasa Medical Faculty, Istanbul (Turkey); Ocak, Meltem; Araman, Ahmet; Ozsoy, Yildiz [Istanbul University, Department of Pharmaceutical Technology, Pharmacy Faculty, Istanbul (Turkey); Decristoforo, Clemens [Medical University of Innsbruck, Clinical Department of Nuclear Medicine, Innsbruck (Austria)

    2012-08-15

    Recent studies have suggested that positron emission tomography (PET) imaging with {sup 68}Ga-labelled DOTA-somatostatin analogues (SST) like octreotide and octreotate is useful in diagnosing neuroendocrine tumours (NETs) and has superior value over both CT and planar and single photon emission computed tomography (SPECT) somatostatin receptor scintigraphy (SRS). The aim of the present study was to evaluate the role of {sup 68}Ga-DOTA-1-NaI{sup 3}-octreotide ({sup 68}Ga-DOTANOC) in patients with SST receptor-expressing tumours and to compare the results of {sup 68}Ga-DOTA-D-Phe{sup 1}-Tyr{sup 3}-octreotate ({sup 68}Ga-DOTATATE) in the same patient population. Twenty SRS were included in the study. Patients' age (n = 20) ranged from 25 to 75 years (mean 55.4 {+-} 12.7 years). There were eight patients with well-differentiated neuroendocrine tumour (WDNET) grade1, eight patients with WDNET grade 2, one patient with poorly differentiated neuroendocrine carcinoma (PDNEC) grade 3 and one patient with mixed adenoneuroendocrine tumour (MANEC). All patients had two consecutive PET studies with {sup 68}Ga-DOTATATE and {sup 68}Ga-DOTANOC. All images were evaluated visually and maximum standardized uptake values (SUV{sub max}) were also calculated for quantitative evaluation. On visual evaluation both tracers produced equally excellent image quality and similar body distribution. The physiological uptake sites of pituitary and salivary glands showed higher uptake in {sup 68}Ga-DOTATATE images. Liver and spleen uptake values were evaluated as equal. Both {sup 68}Ga-DOTATATE and {sup 68}Ga-DOTANOC were negative in 6 (30 %) patients and positive in 14 (70 %) patients. In {sup 68}Ga-DOTANOC images only 116 of 130 (89 %) lesions could be defined and 14 lesions were missed because of lack of any uptake. SUV{sub max} values of lesions were significantly higher on {sup 68}Ga-DOTATATE images. Our study demonstrated that the images obtained by {sup 68}Ga-DOTATATE and {sup 68}Ga

  13. Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate

    International Nuclear Information System (INIS)

    Ni, Yiqiang; Zhou, Deqiu; Chen, Zijun; Zheng, Yue; He, Zhiyuan; Yang, Fan; Yao, Yao; Zhou, Guilin; Shen, Zhen; Zhong, Jian; Zhang, Baijun; Liu, Yang; Wu, Zhisheng

    2015-01-01

    The influence of different C-doping locations in a GaN/Si structure with a GaN/AlN superlattice (SL) buffer on the material and electrical properties of GaN/Si was studied. The introduction of C doping can remarkably degrade the crystal quality of the buffer. C-doping of a top GaN buffer can introduce compressive stress into the top GaN due to the size effect, while C-doping in a SL buffer can impair the compressive stress provided from the SL buffer to the top GaN. It is found that introducing high-density carbon into the whole buffer can result in a more strain-balanced GaN/Si system with small deterioration of the 2DEG channel. Furthermore, the whole buffer C-doping method is an effective and easy way to achieve a thin buffer with low leakage current and high breakdown voltage (266 V@1 nA mm −1 ; 698 V@10 μA mm −1 ; 912 V@1 mA mm −1 ). By using the whole-buffer C-doping method, a 2.5 μm-thick AlGaN/GaN HFET with a breakdown voltage higher than 900 V was achieved, and the breakdown voltage per unit buffer thickness can reach 181 V μm −1 . (paper)

  14. Pressure dependence of optical transitions in In0.15Ga0.85N/GaN multiple quantum wells

    International Nuclear Information System (INIS)

    Shan, W.; Ager, J.W. III; Walukiewicz, W.; Haller, E.E.; McCluskey, M.D.; Johnson, N.M.; Bour, D.P.

    1998-01-01

    The effects of hydrostatic pressure on optical transitions in In 0.15 Ga 0.85 N/GaN multiple quantum wells (MQW close-quote s) have been studied. The optical transition associated with confined electron and hole states in the MQW close-quote s was found to shift linearly to higher energy with pressure but exhibit a significantly weaker pressure dependence compared to bulklike thick epitaxial-layer samples. Similar pressure coefficients obtained by both photomodulation and photoluminescence measurements rule out the possibility of the transition involving localized states deep in the band gap. We found that the difference in the compressibility of In x Ga 1-x N and GaN induces a tensile strain in the compressively strained In x Ga 1-x N well layers, partially compensating the externally applied hydrostatic pressure. This mechanical effect is primarily responsible for the smaller pressure dependence of the optical transitions in the In x Ga 1-x N/GaN MQW close-quote s. In addition, the pressure-dependent measurements allow us to identify a spectral feature observed at an energy below the GaN band gap. We conclude that this feature is due to transitions from ionized Mg acceptor states to the conduction band in the p-type GaN cladding layer rather than a confined transition in the MQW close-quote s. copyright 1998 The American Physical Society

  15. Compositional analysis of silicon nitride films on Si and GaAs by backscattering spectrometry and nuclear resonance reaction analysis

    International Nuclear Information System (INIS)

    Kumar, Sanjiv; Raju, V.S.

    2004-01-01

    This paper describes the application of proton and α-backscattering spectrometry for the determination of atomic ratio of Si to N in 1100-5000 A silicon nitride films on Si and GaAs. The conventional α-Rutherford backscattering spectrometry is suitable for the analysis of films on Si; it is rather inadequate for films on GaAs due to higher background from the substrate. It is shown that these films can be analysed by 14 N(α,α) 14 N scattering with 3.5 MeV α-particles. Proton elastic scattering with enhanced cross sections for 28 Si(p,p) 28 Si and 14 N(p,p) 14 N scatterings, is also suitable for analysing films on GaAs. However, the analysis of films on Si by this technique is difficult due to interferences between the signals of Si from the film and the substrate. In addition, the hydrogen content in films is determined by 1 H( 19 F,αγ) 16 O nuclear reaction analysis using the resonance at 6.4 MeV. The combination of backscattering spectrometry with nuclear reaction analysis provides compositional analysis of ternary Si 1-(x+y) N x H y films

  16. Investigation of Cu(In,Ga)Se{sub 2} using Monte Carlo and the cluster expansion technique

    Energy Technology Data Exchange (ETDEWEB)

    Ludwig, Christian D.R.; Gruhn, Thomas; Felser, Claudia [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg-University, Mainz (Germany); Windeln, Johannes [IBM Germany, Mgr. Technology Center ISC EMEA, Mainz (Germany)

    2010-07-01

    CIGS based solar cells are among the most promising thin-film techniques for cheap, yet efficient modules. They have been investigated for many years, but the full potential of CIGS cells has not yet been exhausted and many effects are not understood. For instance, the band gap of the absorber material Cu(In,Ga)Se{sub 2} varies with Ga content. The question why solar cells with high Ga content have low efficiencies, despite the fact that the band gap should have the optimum value, is still unanswered. We are using Monte Carlo simulations in combination with a cluster expansion to investigate the homogeneity of the In-Ga distribution as a possible cause of the low efficiency of cells with high Ga content. The cluster expansion is created by a fit to ab initio electronic structure energies. The results we found are crucial for the processing of solar cells, shed light on structural properties and give hints on how to significantly improve solar cell performance. Above the transition temperature from the separated to the mixed phase, we observe different sizes of the In and Ga domains for a given temperature. The In domains in the Ga-rich compound are smaller and less abundant than the Ga domains in the In-rich compound. This translates into the Ga-rich material being less homogeneous.

  17. Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

    Energy Technology Data Exchange (ETDEWEB)

    Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Kuzmík, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Brunner, F.; Cho, E.-M. [Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Hashizume, T. [Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 060-0814 Sapporo, Japan and JST-CREST, 102-0075 Tokyo (Japan)

    2014-09-14

    Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from EC-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about EC-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

  18. A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

    Science.gov (United States)

    Gale, R. P.; Fan, J. C. C.; Turner, G. W.; Chapman, R. L.

    1984-01-01

    Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

  19. Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, T.K.; Zorn, M.; Zeimer, U.; Kissel, H.; Bugge, F.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2005-09-01

    Highly strained In{sub x}Ga{sub 1-x}As quantum wells (QWs) with GaAs barriers emitting around 1.2 {mu}m are grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures using conventional precursors. The effects of growth temperature, V/III ratio and growth rate on QW composition and luminescence properties are studied. The variation of indium incorporation with V/III ratio at a growth temperature of 510 C is found to be opposite to the results reported for 700 C. By an appropriate choice of the growth parameters, we could extend the room temperature photoluminescence (PL) wavelength of InGaAs/GaAs QWs up to about 1.24 {mu}m which corresponds to an average indium content of 41% in the QW. The results of the growth study were applied to broad area laser diodes emitting at 1193 nm with low threshold current densities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Efficiency Drop in Green InGaN /GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

    Science.gov (United States)

    Auf der Maur, Matthias; Pecchia, Alessandro; Penazzi, Gabriele; Rodrigues, Walter; Di Carlo, Aldo

    2016-01-01

    White light emitting diodes (LEDs) based on III-nitride InGaN /GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light conversion efficiencies, it has been recently pointed out that the full potential of solid state lighting could be exploited only by color mixing approaches without employing phosphor-based wavelength conversion. Such an approach requires direct emitting LEDs of different colors, including, in particular, the green-yellow range of the visible spectrum. This range, however, suffers from a systematic drop in efficiency, known as the "green gap," whose physical origin has not been understood completely so far. In this work, we show by atomistic simulations that a consistent part of the green gap in c -plane InGaN /GaN -based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing indium content due to random fluctuations of the indium concentration naturally present in any InGaN alloy.

  1. Generated carrier dynamics in V-pit enhanced InGaN/GaN light emitting diode

    KAUST Repository

    Ajia, Idris A.

    2017-12-18

    We investigate the effects of V-pits on the optical properties of a state-of-the art highly efficient, blue InGaN/GaN multi-quantum-well (MQW) light emitting diode (LED) with high internal quantum efficiency (IQE) of > 80%. The LED is structurally enhanced by incorporating pre-MQW InGaN strain-relief layer with low InN content and patterned sapphire substrate. For comparison, a conventional (unenhanced) InGaN/GaN MQW LED (with IQE of 46%) grown under similar conditions was subjected to the same measurements. Scanning transmission electron microscopy (STEM) reveals the absence of V-pits in the unenhanced LED, whereas in the enhanced LED, V-pits with {10-11} facets, emerging from threading dislocations (TDs) were prominent. Cathodoluminescence mapping reveals the luminescence properties near the V-pits, showing that the formation of V-pit defects can encourage the growth of defect-neutralizing barriers around TD defect states. The diminished contribution of TDs in the MQWs allows indium-rich localization sites to act as efficient recombination centers. Photoluminescence and time-resolved spectroscopy measurements suggest that the V-pits play a significant role in the generated carrier rate and droop mechanism, showing that the quantum confined Stark effect is suppressed at low generated carrier density, after which the carrier dynamics and droop are governed by the carrier overflow effect.

  2. Modification of GaN(0001) growth kinetics by Mg doping

    International Nuclear Information System (INIS)

    Monroy, E.; Andreev, T.; Holliger, P.; Bellet-Amalric, E.; Shibata, T.; Tanaka, M.; Daudin, B.

    2004-01-01

    We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology

  3. Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

    Science.gov (United States)

    Perl, E. E.; Kuciauskas, D.; Simon, J.; Friedman, D. J.; Steiner, M. A.

    2017-12-01

    We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 °C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 °C, we measure VOC that is ˜50 mV higher for the GaAs solar cell and ˜60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-type GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 °C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 °C to 400 °C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4× reduction in the effective lifetime and ˜40× increase in the surface recombination velocity as the temperature is increased from 25 °C to 400 °C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 °C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.

  4. Engineering potato starch with a higher phosphate content

    NARCIS (Netherlands)

    Xu, Xuan; Huang, Xing Feng; Visser, Richard G.F.; Trindade, Luisa M.

    2017-01-01

    Phosphate esters are responsible for valuable and unique functionalities of starch for industrial applications. Also in the cell phosphate esters play a role in starch metabolism, which so far has not been well characterized in storage starch. Laforin, a human enzyme composed of a

  5. Biocompatibility of GaSb thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

    2017-07-01

    GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

  6. Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

    International Nuclear Information System (INIS)

    Ridgway, M.C.; Everett, S.E.; Glover, C.J.; Kluth, S.M.; Kluth, P.; Johannessen, B.; Hussain, Z.S.; Llewellyn, D.J.; Foran, G.J.; Azevedo, G. de M.

    2006-01-01

    We have compared the atomic-scale structure of ion irradiated GaN to that of amorphised GaP and GaAs. While continuous and homogenous amorphised layers were easily achieved in GaP and GaAs, ion irradiation of GaN yielded both structural and chemical inhomogeneities. Transmission electron microscopy revealed GaN crystallites and N 2 bubbles were interspersed within an amorphous GaN matrix. The crystallite orientation was random relative to the unirradiated epitaxial structure, suggesting their formation was irradiation-induced, while the crystallite fraction was approximately constant for all ion fluences beyond the amorphisation threshold, consistent with a balance between amorphisation and recrystallisation processes. Extended X-ray absorption fine structure measurements at the Ga K-edge showed short-range order was retained in the amorphous phase for all three binary compounds. For ion irradiated GaN, the stoichiometric imbalance due to N 2 bubble formation was not accommodated by Ga-Ga bonding in the amorphous phase or precipitation of metallic Ga but instead by a greater reduction in Ga coordination number

  7. SFC Optimization for Aero Engine Based on Hybrid GA-SQP Method

    Science.gov (United States)

    Li, Jie; Fan, Ding; Sreeram, Victor

    2013-12-01

    This study focuses on on-line specific fuel consumption (SFC) optimization of aero engines. For solving this optimization problem, a nonlinear pneumatic and thermodynamics model of the aero engine is built and a hybrid optimization technique which is formed by combining the genetic algorithm (GA) and the sequential quadratic programming (SQP) is presented. The ability of standard GA and standard SQP in solving this type of problem is investigated. It has been found that, although the SQP is fast, very little SFC reductions can be obtained. The GA is able to solve the problem well but a lot of computational time is needed. The presented hybrid GA-SQP gives a good SFC optimization effect and saves 76.6% computational time when compared to the standard GA. It has been shown that the hybrid GA-SQP is a more effective and higher real-time method for SFC on-line optimization of the aero engine.

  8. Effect of Ga doping and point defect on magnetism of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Qingyu [College of Science, Inner Mongolia University of Technology, 010051 Hohhot (China); Zhao, Chunwang, E-mail: cwzhao@shmtu.edu.cn [College of Arts and Sciences, Shanghai Maritime University, 201306 Shanghai (China); Jia, Xiaofang; Qu, Lingfeng [College of Science, Inner Mongolia University of Technology, 010051 Hohhot (China)

    2017-02-01

    The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.

  9. Cathodoluminescence studies of defects and piezoelectric fields in GaN

    International Nuclear Information System (INIS)

    Henley, S.

    2002-01-01

    200nm at low electron beam irradiation doses to 330nm after higher dose irradiation in the SEM. It is proposed that the change in the MCDL and the prolonged nature of the blue shift of the QW CL peak can be explained by the filling of trap states in the vicinity of the QW. It is suggested that these trap states take the form of fluctuations in the In content of the QW. An epitaxial laterally overgrown GaN sample (ELOG) was studied using similar techniques employed on the InGaN/GaN SQW. ELOG films are often used commercially as substrates for blue and violet GaN based LDs. The ELOG sample was shown to have a significantly reduced threading dislocation density in the overgrown regions. It was shown that the reduction in dislocation density resulted in an improved luminescence efficiency. The technique was non-ideal however, as the coalescence boundary of the ELO regions was shown to be a tilt-boundary described by the generation of threading dislocations. Some of these dislocations were observed to generate in-plane dislocation half-loops, which moved under the influence of the stress present. These dislocation half loops were shown to act as non-radiative recombination centres. (author)

  10. InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

    International Nuclear Information System (INIS)

    Kim, Sukwon; Kim, Tae Geun

    2015-01-01

    In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga_2O_3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10"−"3 Ω-cm"2 with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga_2O_3 targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10"−"3 Ω-cm"2 contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

  11. InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sukwon; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

    2015-09-30

    In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10{sup −3} Ω-cm{sup 2} with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10{sup −3} Ω-cm{sup 2} contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

  12. Evaluation and comparison of Ga-68 DOTA-TATE and Ga-68 DOTA-NOC PET/CT imaging in well-differentiated thyroid cancer.

    Science.gov (United States)

    Ocak, Meltem; Demirci, Emre; Kabasakal, Levent; Aygun, Aslan; Tutar, Rumeysa O; Araman, Ahmet; Kanmaz, Bedii

    2013-11-01

    Somatostatin receptor (Sstr) scintigraphy with radiolabelled somatostatin analogues has been used extensively for the diagnosis and therapy of Sstr-expressing tumours. It has been shown that well-differentiated thyroid cancer (WDTC) cells have a high expression of Sstr2, Sstr3 and Sstr5. Hence, WDTC cells could be an ideal target for the evaluation of lesion uptake of Ga-68 DOTA-1-NaI3-octreotide (DOTA-NOC), which has a high affinity not only to Sstr2 but also to Sstr3 and Sstr5. The aim of the present study was to evaluate the value of Ga-68 DOTA-NOC as a target for Sstr2-expressing, Sstr3-expressing and Sstr5-expressing tumours in WDTC patients and to compare the results with those of Ga-68 DOTA-TATE in the same patient population. Thirteen patients with WDTC were included in our study: nine with papillary thyroid cancer, three with Hurthle cell carcinoma and one with follicular thyroid carcinoma. All patients had elevated serum thyroglobulin levels and negative post-therapeutic I-131 whole-body scans, which were obtained after the last radioiodine treatment. All patients had undergone two consecutive PET imaging studies with Ga-68 DOTA-D-Phe1-Tyr3-octreotate (DOTA-TATE) and Ga-68 DOTA-NOC, respectively. All images were evaluated visually, and maximum standardized uptake values were calculated. Both Ga-68 DOTA-TATE and Ga-68 DOTA-NOC PET images gave comparable results. Among the 13 patients, imaging with both Ga-68 DOTA-TATE and Ga-68 DOTA-NOC gave negative results in five (38%) patients and positive results in eight (62%) patients. A total of 45 lesions were identified on Ga-68 DOTA-TATE images and 42 on Ga-68 DOTA-NOC images; three lesions were missed. Lesion uptake was significantly higher on Ga-68 DOTA-TATE images. Maximum standardized uptake values of Ga-68 DOTA-TATE and Ga-68 DOTA-NOC were 12.9±9.1 and 6.3±4.1 (n=54, PDOTA-TATE has a higher lesion uptake even in WDTC patients and may have potential advantage over Ga-68 DOTA-NOC.

  13. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

    Science.gov (United States)

    Dong, Yan; Son, Dong-Hyeok; Dai, Quan; Lee, Jun-Hyeok; Won, Chul-Ho; Kim, Jeong-Gil; Chen, Dunjun; Lee, Jung-Hee; Lu, Hai; Zhang, Rong; Zheng, Youdou

    2018-04-24

    The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al 0.83 In 0.17 N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al 0.83 In 0.17 N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

  14. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

    Directory of Open Access Journals (Sweden)

    Yan Dong

    2018-04-01

    Full Text Available The AlInN/GaN high-electron-mobility-transistor (HEMT indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al0.83In0.17N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG density and a thinner barrier layer in Al0.83In0.17N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

  15. Musts with Increased Lignan Content Through Addition of Lignan Extracts

    Czech Academy of Sciences Publication Activity Database

    Balík, J.; Híc, P.; Kulichová, J.; Novotná, P.; Tříska, Jan; Vrchotová, Naděžda; Strohalm, J.; Lefnerová, D.; Houška, M.

    2017-01-01

    Roč. 10, č. 7 (2017), s. 1367-1373 ISSN 1935-5130 R&D Projects: GA MŠk(CZ) LO1415; GA MZe QJ1210258 Institutional support: RVO:67179843 Keywords : Enrichment of must * Lignans (HMR, CONI) * Antioxidant activity * Total polyphenol content Subject RIV: GM - Food Processing OBOR OECD: Environmental sciences (social aspects to be 5.7) Impact factor: 2.576, year: 2016

  16. Long-term trends in the total electron content

    Czech Academy of Sciences Publication Activity Database

    Laštovička, Jan; Urbář, Jaroslav; Kozubek, Michal

    2017-01-01

    Roč. 44, č. 16 (2017), s. 8186-8172 ISSN 0094-8276 R&D Projects: GA ČR(CZ) GA15-03909S Institutional support: RVO:68378289 Keywords : total electron content * long-term trend * solar control Subject RIV: DG - Athmosphere Sciences, Meteorology OBOR OECD: Climatic research Impact factor: 4.253, year: 2016 http://onlinelibrary.wiley.com/doi/10.1002/2017GL075063/full

  17. Aluminium incorporation in AlxGa1-xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Gago, R.; Gonzalez-Posada, F.; Kreissig, U.; Di Forte Poisson, M.-A.; Brana, A.F.; Munoz, E.

    2008-01-01

    The Al content in Al x Ga 1-x N/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1 0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis

  18. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

    International Nuclear Information System (INIS)

    Harris, James S. Jr.; Kudrawiec, R.; Yuen, H.B.; Bank, S.R.; Bae, H.P.; Wistey, M.A.; Jackrel, D.; Pickett, E.R.; Sarmiento, T.; Goddard, L.L.; Lordi, V.; Gugov, T.

    2007-01-01

    In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2-1.6 μm range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5-1.6 μm lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 μm based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

    Energy Technology Data Exchange (ETDEWEB)

    Harris, James S. Jr.; Kudrawiec, R.; Yuen, H.B.; Bank, S.R.; Bae, H.P.; Wistey, M.A.; Jackrel, D.; Pickett, E.R.; Sarmiento, T.; Goddard, L.L.; Lordi, V.; Gugov, T. [Solid State and Photonics Laboratory, Stanford University, CIS-X 328, Via Ortega, Stanford, California 94305-4075 (United States)

    2007-08-15

    In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2-1.6 {mu}m range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5-1.6 {mu}m lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 {mu}m based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Clinical study of 67Ga labelled human fibrinogen for detection of thrombi

    International Nuclear Information System (INIS)

    Katsuura, Yutaka

    1988-01-01

    The usefulness to detect thrombi by Ga-67 labelled human fibrinogen (Ga-F) was investigated in 22 patients with various diseases who had thrombi or were suspected to have thrombi. In 5 of 9 patients with aortic aneurysm, images of thrombi were obtained by Ga-F. In 1 of 2 patients with myocardial infarction, left ventricular thrombi were detected. In 1 of 5 patients with mitral stenosis, left atrial thrombus was recognized. Of these patients, in 2 patients who have no evidence of thrombi confirmed at another methods, thrombi were detected by Ga-F. In 6 out of 8 patients with thrombi confirmed at echocardiography or computed tomography, thrombi were detected by Ga-F. In these patients, 2 patients with negative images were treated by antithromboticdrugs. In 7 patients, both Ga-F and In-111 labelled platelets (In-P) were comparatively studied simultaniuosly. No difference in the sensitivity of the detection of thrombi were recognized between two groups. The images of thrombi by both Ga-F and In-P were detected positively in 3 patients and were not found in 4 patients. However, the handling of Ga-F method was much easier than that of In-P method. In conclusion, Ga-F could be useful for the detection of thrombi in various thrombotic diseases. Fibrinogen kinetic studies using Ga-F were performed. Fibrinogen turnover rates (FTR) in the cases with positive image by Ga-F were higher than those in the cases with Ga-F negative image. (positive : 24.3 ± 9.5 mg/kg/day, negative : 19.7 ± 8.5 mg/kg/day) The results of kinetic studies by Ga-F were similar to those by 1 - 125 fibrinogen. (author)

  1. Investigation of lattice defects and compositional gradients in Cu(In,Ga)Se{sub 2} thin films for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Jens; Boit, Christian [Department of Semiconductor Devices, Berlin University of Technology, Einsteinufer 19, 10587 Berlin (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2011-07-01

    Cu(In,Ga)Se{sub 2} absorber layers used in thin-film solar cells exhibit, when grown in a multi-stage process, compositional gradients of gallium and indium, dependent on process parameters such as the Ga content. The high lateral resolution of transmission electron microscopy (TEM) imaging and energy-dispersive X-ray spectroscopy (EDX) allows the determination of lattice defects and the elemental concentrations at identical sample positions. Cross-sectional TEM samples of ZnO/CdS/Cu(In,Ga)Se{sub 2}/Mo/glass stacks were prepared with varying [Ga]/([In]+[Ga]) ratio in the absorber. The shape of the Ga distribution was measured by means of EDX and differs for the various [Ga]/([In]+[Ga]) ratios. Linear (dislocations) and planar defects (stacking faults, microtwins) were studied by means of TEM bright field and dark field images along the lengths of the Cu(In,Ga)Se{sub 2} layers. Strong Ga compositional gradients were found even within individual grains. It appears that these Ga gradients correlate with the occurrence of dislocation networks in large grains (diameter > 1 {mu}m). We assume that these dislocations compensate for lattice mismatch due to the change in composition in this area of the lattice.

  2. Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

    International Nuclear Information System (INIS)

    Wang, C.-L.; Tsai, M.-C.; Gong, J.-R.; Liao, W.-T.; Lin, P.-Y.; Yen, K.-Y.; Chang, C.-C.; Lin, H.-Y.; Hwang, S.-K.

    2007-01-01

    Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance

  3. Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Khir, Farah Liyana Muhammad, E-mail: 21001899@student.uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Myers, Matthew, E-mail: Matt.Myers@csiro.au [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); CSIRO Earth Science and Resource Engineering, Kensington, Western Australia 6151 (Australia); Podolska, Anna [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Department of Exploration Geophysics, Curtin University of Technology, 26 Dick Perry Avenue, ARRC, Kensington, Western Australia 6151 (Australia); Sanders, Tarun Maruthi [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Baker, Murray V., E-mail: murray.baker@uwa.edu.au [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Nener, Brett D., E-mail: brett.nener@uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Parish, Giacinta, E-mail: giacinta.parish@uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia)

    2014-09-30

    Highlights: • Soft X-ray was used to study the surface chemistry of GaN and AlGaN. • The surface chemistry and sensor behaviour were investigated. • The oxide of aluminum is significantly more reactive than gallium. • The Cl{sup −} ions are greater in GaN samples compared to AlGaN samples. - Abstract: Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p{sub 1/2} and Cl 2p{sub 3/2} peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials.

  4. Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

    Science.gov (United States)

    Kuo, Dong-Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

    2015-01-01

    Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential () growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm-3 and electrical mobility of 15.7 ± 4.2 cm2 V-1 s-1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/ n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.

  5. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

    Directory of Open Access Journals (Sweden)

    Chang-Ju Lee

    2017-07-01

    Full Text Available The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa−xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1−xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10−2 A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

  6. Development of high responsivity Ge:Ga photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

    1984-06-01

    Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

  7. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    International Nuclear Information System (INIS)

    Chang, P. C.; Baca, A. G.; Li, N. Y.; Xie, X. M.; Hou, H. Q.; Armour, E.

    2000-01-01

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs DHBT has a low V ON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In 0.03 Ga 0.97 As 0.99 N 0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BV CEO ) is 10 V, consistent with the BV CEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics

  8. Fabrication of p-type porous GaN on silicon and epitaxial GaN

    OpenAIRE

    Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

    2013-01-01

    Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

  9. Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems

    International Nuclear Information System (INIS)

    Hu, Y.-J.; Huang, Y.-W.; Fang, C.-H.; Wang, J.-C.; Chen, Y.-F.; Nee, T.-E.

    2010-01-01

    The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement.

  10. GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

    Science.gov (United States)

    Kisan Patil, Pallavi; Luna, Esperanza; Matsuda, Teruyoshi; Yamada, Kohki; Kamiya, Keisuke; Ishikawa, Fumitaro; Shimomura, Satoshi

    2017-03-01

    We report a GaAs0.96Bi0.04/GaAs multiple quantum well (MQW) light emitting diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) technique. In particular, the QWs and the barriers in the intrinsic region were grown at the different temperatures of {T}{{GaAsBi}} = 350 °C and {T}{{GaAs}} = 550 ^\\circ {{C}}, respectively. Investigations of the microstructure using transmission electron microscopy (TEM) reveal homogeneous MQWs free of extended defects. Furthermore, the local determination of the Bi distribution profile across the MQWs region using TEM techniques confirm the uniform Bi distribution, while revealing a slightly chemically graded GaAs-on-GaAsBi interface due to Bi surface segregation. Despite this small broadening, we found that Bi segregation is significantly reduced (up to 18% reduction) compared to previous reports on Bi segregation in GaAsBi/GaAs MQWs. Hence, the TST procedure proves as a very efficient method to reduce Bi segregation and thus increase the quality of the layers and interfaces. These improvements positively reflect in the optical properties. Room temperature photoluminescence and electroluminescence (EL) at 1.23 μm emission wavelength are successfully demonstrated using TST MQWs containing less Bi content than in previous reports. Finally, LED fabricated using the present TST technique show current-voltage (I-V) curves with a forward voltage of 3.3 V at an injection current of 130 mA under 1.0 kA cm-2 current excitation. These results not only demonstrate that TST technique provides optical device quality GaAsBi/GaAs MQWs but highlight the relevance of TST-based growth techniques on the fabrication of future heterostructure devices based on dilute bismides.

  11. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    International Nuclear Information System (INIS)

    Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-01-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  12. Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

    Science.gov (United States)

    Kim, Dong-Hwan; Jeong, Jun-Seok; Eom, Su-Keun; Lee, Jae-Gil; Seo, Kwang-Seok; Cha, Ho-Young

    2017-11-01

    In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of 1 × 1019 cm -3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics.

  13. Spin current and electrical polarization in GaN double-barrier structures

    OpenAIRE

    Litvinov, V. I.

    2007-01-01

    Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The relation between the electrical polarization and the spin orientation allows engineering a zero magnetic field spin injection manipulating the lattice-mismatch strain with an Al-content in the barriers.

  14. Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

    KAUST Repository

    Ohkawa, Kazuhiro

    2017-10-24

    GaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.

  15. Investigations of the Optical Properties of GaNAs Alloys by First-Principle.

    Science.gov (United States)

    Borovac, Damir; Tan, Chee-Keong; Tansu, Nelson

    2017-12-11

    We present a Density Functional Theory (DFT) analysis of the optical properties of dilute-As GaN 1-x As x alloys with arsenic (As) content ranging from 0% up to 12.5%. The real and imaginary parts of the dielectric function are investigated, and the results are compared to experimental and theoretical values for GaN. The analysis extends to present the complex refractive index and the normal-incidence reflectivity. The refractive index difference between GaN and GaNAs alloys can be engineered to be up to ~0.35 in the visible regime by inserting relatively low amounts of As-content into the GaN system. Thus, the analysis elucidates on the birefringence of the dilute-As GaNAs alloys and comparison to other experimentally characterized III-nitride systems is drawn. Our findings indicate the potential of GaNAs alloys for III-nitride based waveguide and photonic circuit design applications.

  16. Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Xing, Huili; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-10-19

    By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

  17. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  18. Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

    International Nuclear Information System (INIS)

    Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick; Xing, Huili; Jena, Debdeep

    2015-01-01

    By the insertion of thin In x Ga 1−x N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors

  19. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

    Science.gov (United States)

    Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

    2016-01-01

    The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively. PMID:26794268

  20. GaAs-based high temperature electrically pumped polariton laser

    Energy Technology Data Exchange (ETDEWEB)

    Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu; Frost, Thomas; Deshpande, Saniya; Das, Ayan [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

    2014-06-09

    Strong coupling effects and polariton lasing are observed at 155 K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90 A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85 meV and a blueshift of the emission wavelength by 0.89 meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

  1. Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes.

    Science.gov (United States)

    Shi, Teng; Jackson, Howard E; Smith, Leigh M; Jiang, Nian; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Zheng, Changlin; Etheridge, Joanne

    2015-03-11

    We use low-temperature photoluminescence, photoluminescence excitation, and photoluminescence imaging spectroscopy to explore the optical and electronic properties of GaAs/AlGaAs quantum well tube (QWT) heterostructured nanowires (NWs). We find that GaAs QWTs with widths >5 nm have electronic states which are delocalized and continuous along the length of the NW. As the NW QWT width decreases from 5 to 1.5 nm, only a single electron state is bound to the well, and no optical excitations to a confined excited state are present. Simultaneously, narrow emission lines (fwhm points along the length of the NW. We find that these quantum-dot-like states broaden at higher temperatures and quench at temperatures above 80 K. The lifetimes of these localized states are observed to vary from dot to dot from 160 to 400 ps. The presence of delocalized states and then localized states as the QWTs become more confined suggests both opportunities and challenges for possible incorporation into quantum-confined device structures.

  2. Asymptotic behaviour of the Weyl tensor in higher dimensions

    Czech Academy of Sciences Publication Activity Database

    Ortaggio, Marcello; Pravdová, Alena

    2014-01-01

    Roč. 90, č. 10 (2014), s. 104011 ISSN 1550-7998 R&D Projects: GA ČR GA13-10042S Institutional support: RVO:67985840 Keywords : higher-dimensional gravity * asymptotic structure * classical general relativity Subject RIV: BA - General Mathematics Impact factor: 4.643, year: 2014 http://journals.aps.org/prd/abstract/10.1103/PhysRevD.90.104011

  3. Asymptotic behaviour of the Weyl tensor in higher dimensions

    Czech Academy of Sciences Publication Activity Database

    Ortaggio, Marcello; Pravdová, Alena

    2014-01-01

    Roč. 90, č. 10 (2014), s. 104011 ISSN 1550-7998 R&D Projects: GA ČR GA13-10042S Institutional support: RVO:67985840 Keywords : higher-dimensional gravity * asymptotic structure * classical general relativity Subject RIV: BA - General Mathematics Impact factor: 4.643, year: 2014 http://journals. aps .org/prd/abstract/10.1103/PhysRevD.90.104011

  4. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

    Science.gov (United States)

    Sharma, N; Periasamy, C; Chaturvedi, N

    2018-07-01

    In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

  5. Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

    Science.gov (United States)

    Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

    2018-01-01

    Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

  6. The 2018 GaN power electronics roadmap

    Science.gov (United States)

    Amano, H.; Baines, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R.; Charles, M.; Chen, Kevin J.; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; Merlyne De Souza, Maria; Decoutere, Stefaan; Di Cioccio, L.; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Häberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Boon Lee, Kean; Li, Xu; Marcon, Denis; März, Martin; McCarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E. M. S.; Oliver, Stephen; Palacios, Tomás; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hove, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao

    2018-04-01

    Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

  7. Automated synthesis, characterization and biological evaluation of [{sup 68}Ga]Ga-AMBA, and the synthesis and characterization of {sup nat}Ga-AMBA and [{sup 67}Ga]Ga-AMBA

    Energy Technology Data Exchange (ETDEWEB)

    Cagnolini, Aldo; Chen Jianqing; Ramos, Kimberly; Marie Skedzielewski, Tina; Lantry, Laura E.; Nunn, Adrian D.; Swenson, Rolf E. [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States); Linder, Karen E., E-mail: karen.e.linder@gmail.co [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States)

    2010-12-15

    Ga-AMBA (Ga-DO3A-CH{sub 2}CO-G-[4-aminobenzoyl]-QWAVGHLM-NH{sub 2}) is a bombesin-like agonist with high affinity for gastrin releasing peptide receptors (GRP-R). Syntheses for {sup nat}Ga-AMBA, [{sup 67}Ga]Ga-AMBA and [{sup 68}Ga]Ga-AMBA were developed. The preparation of HPLC-purified and Sep-Pak purified [{sup 68}Ga]Ga-AMBA were fully automated, using the built-in radiodetector of the Tracerlab FX F-N synthesizer to monitor fractionated {sup 68}Ge/{sup 68}Ga generator elution and purification. The total synthesis time, including the fractional elution of the generator, was 20 min for Sep-Pak purified material and 40 min for HPLC-purified [{sup 68}Ga]Ga-AMBA. Both [{sup 67}Ga]Ga-AMBA and [{sup 177}Lu]Lu-AMBA showed comparable high affinity for GRP-R in the human prostate cancer cell line PC-3 in vitro (k{sub D}=0.46{+-}0.07; 0.44{+-}0.08 nM), high internalization (78; 77%) and low efflux from cells at 2 h (2.4{+-}0.7; 2.9{+-}1.8%). Biodistribution results in PC-3 tumor-bearing male nude mice showed comparable uptake for [{sup 177}Lu]Lu-, [{sup 111}In]In-, [{sup 67}Ga]Ga- and [{sup 68}Ga]Ga-AMBA.

  8. Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tuna, Oecal

    2013-07-18

    .82}N:Mg is about 80 meV, which is much lower that the activation energy of Mg in Mg-doped GaN which is about 160 meV. The effect of Mg concentration on the conductivity is investigated by growing InN and In-rich InGaN layers doped with different Mg concentrations. ECV results indicated that p-type buried layers exist in all Mg-doped InN and In-rich InGaN layers. As expected, a surface accumulation layer is observed. A strong correlation with amount of surface accumulation and In content in InGaN is obtained. It is also shown that the Mg doping concentration is critical for conductivity type. For instance, in the case of InN:Mg, p-type conductivity is obtained when the InN layers are doped with Mg concentration in the range of 2.6 x 10{sup 20} cm{sup -3}, whereas a higher magnesium concentration is shown to result in a completely n-type conduction. In the case of over doping, Mg atoms form complexes with N vacancies which behave as donors and therefore this result in a change in conductivity from p- to n-type.

  9. Tailoring Si(100) substrate surfaces for GaP growth by Ga deposition: A low-energy electron microscopy study

    Energy Technology Data Exchange (ETDEWEB)

    Rienäcker, Michael; Borkenhagen, Benjamin, E-mail: b.borkenhagen@pe.tu-clausthal.de; Lilienkamp, Gerhard; Daum, Winfried [TU Clausthal, Institut für Energieforschung und Physikalische Technologien, Leibnizstraße 4, D-38678 Clausthal-Zellerfeld (Germany)

    2015-08-07

    For GaP-on-Si(100) heteroepitaxy, currently considered as a model system for monolithic integration of III–V semiconductors on Si(100), the surface steps of Si(100) have a major impact on the quality of the GaP film. Monoatomic steps cause antiphase domains in GaP with detrimental electronic properties. A viable route is to grow the III–V epilayer on single-domain Si(100) with biatomic steps, but preferably not at the expense of reduced terrace widths introduced by miscut substrates. We have performed in situ investigations of the influence of Ga deposition on the kinetics of surface steps and terraces of Si(100) at substrate temperatures above 600 °C by low-energy electron microscopy. Starting from nearly equally distributed T{sub A} and T{sub B} terraces of a two-domain Si(100) surface, submonolayer deposition of Ga results in a transformation into a surface dominated by T{sub A} terraces and biatomic D{sub A} steps. This transformation is reversible, and Si(100) with monoatomic steps is recovered upon termination of the Ga flux. Under conditions of higher coverages (but still below 0.25 monolayer), we observe restructuring into a surface with T{sub B} dominance, similar to the findings of Hara et al. [J. Appl. Phys. 98, 083515 (2005)]. The occurrence and mutual transformations of surface structures with different terrace and step structures in a narrow range of temperatures and Ga deposition rates is discussed.

  10. Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

    International Nuclear Information System (INIS)

    Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

    2014-01-01

    Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

  11. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Science.gov (United States)

    Zhang, Yuewei; Neal, Adam; Xia, Zhanbo; Joishi, Chandan; Johnson, Jared M.; Zheng, Yuanhua; Bajaj, Sanyam; Brenner, Mark; Dorsey, Donald; Chabak, Kelson; Jessen, Gregg; Hwang, Jinwoo; Mou, Shin; Heremans, Joseph P.; Rajan, Siddharth

    2018-04-01

    In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (β-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 ± 0.015 m0 and the quantum scattering time to be 0.33 ps at 3.5 K. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the β-Ga2O3 material system.

  12. Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

    Science.gov (United States)

    Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

    2018-05-01

    We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

  13. Site preference and phase stability of Ti doping Ni–Mn–Ga shape memory alloys from first-principles calculations

    International Nuclear Information System (INIS)

    Gao, Zhiyong; Chen, Baishu; Meng, Xianglong; Cai, Wei

    2013-01-01

    Highlights: •Site preference and phase stability of NiMnGaTi are studied by first-principles. •The Ti atoms prefer to occupy the Ga sites in the Ni 2 MnGa austenitic phase. •The phase stability becomes worse when Ga is replaced by Ti. •The phase stability is discussed based on the densities of states. -- Abstract: The effects of Ti content on martensitic transformation and phase stability of Ni 50 Mn 25 Ga 25−x Ti x shape memory alloys were investigated from first-principles calculations based on density functional theory. The formation energy results indicate that the added Ti preferentially occupies the Ga sites in Ni 2 MnGa alloy due to the lowest formation energy. The total energy difference between austenite and martensite increases with Ti alloying, being relevant to the experimentally reported changes in martensitic transformation temperature. The phase stability of Ni 50 Mn 25 Ga 25−x Ti x austenite decreases with increasing Ti content, which results from the reduced Ni 3d–Mn 3d hybridization when Ga is replaced by Ti

  14. Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

    International Nuclear Information System (INIS)

    Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

    2006-01-01

    We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

  15. Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Chen Wanjun; Zhang Jing; Zhang Bo; Chen, Kevin Jing

    2013-01-01

    The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal—semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied. (semiconductor devices)

  16. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

    Science.gov (United States)

    Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

    2017-01-01

    . Densities of states in the orbital hybridization between Ga and N atoms of wurtzite GaN are much higher, indicating more electrons participate in forming Ga-N ionic bonds in the wurtzite GaN. PMID:29231902

  17. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

    Directory of Open Access Journals (Sweden)

    Hongbo Qin

    2017-12-01

    , resulting in a wider band gap. Densities of states in the orbital hybridization between Ga and N atoms of wurtzite GaN are much higher, indicating more electrons participate in forming Ga-N ionic bonds in the wurtzite GaN.

  18. Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals.

    Science.gov (United States)

    Qin, Hongbo; Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

    2017-12-12

    states in the orbital hybridization between Ga and N atoms of wurtzite GaN are much higher, indicating more electrons participate in forming Ga-N ionic bonds in the wurtzite GaN.

  19. 66Ga ground state β spectrum

    DEFF Research Database (Denmark)

    Severin, Gregory; Knutson, L. D.; Voytas, P. A.

    2014-01-01

    The ground state branch of the β decay of 66Ga is an allowed Fermi (0+ → 0+) transition with a relatively high f t value. The large f t and the isospin-forbidden nature of the transition indicates that the shape of the β spectrum of this branch may be sensitive to higher order contributions...... to the decay. Two previous measurements of the shape have revealed deviations from an allowed spectrum but disagree about whether the shape factor has a positive or negative slope. As a test of a new iron-free superconducting β spectrometer, we have measured the shape of the ground state branch of the 66Ga β...... spectrum above a positron energy of 1.9 MeV. The spectrum is consistent with an allowed shape, with the slope of the shape factor being zero to within ±3 × 10−3 per MeV. We have also determined the endpoint energy for the ground state branch to be 4.1535 ± 0.0003 (stat.) ±0.0007 (syst.) MeV, in good...

  20. Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

    Science.gov (United States)

    Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

    2018-04-01

    Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

  1. InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

    Science.gov (United States)

    Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

    1992-01-01

    This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

  2. Synthesis of uniform ZnGa2O4 nanoparticles with high photocatalytic activity

    International Nuclear Information System (INIS)

    Yuan, Yufeng; Huang, Junjian; Tu, Weixia; Huang, Simin

    2014-01-01

    Graphical abstract: - Highlights: • Uniform ZnGa 2 O 4 nanoparticles are obtained by microwave homogeneous coprecipitation. • CTAB benefits ZnGa 2 O 4 improving separation of photoinduced electrons and holes. • Microwave and calcining temperatures are optimized for the morphology of ZnGa 2 O 4 . • ZnGa 2 O 4 nanoparticles show superior photocatalysis in degradations of organic dyes. - Abstract: ZnGa 2 O 4 nanoparticles are obtained by microwave-hydrothermal method through homogeneous coprecipitation reaction using urea as precipitant with surfactant assembly. Synthetic temperature, surfactant, and calcination temperature have the obvious effect on the formation and photocatalytic activity of ZnGa 2 O 4 . ZnGa 2 O 4 nanoparticles synthesized in the optimal conditions are highly dispersed and uniform with average diameter of 16.2 nm possessing a surface area of 70 m 2 g −1 . Under ultraviolet (UV) light illumination, the ZnGa 2 O 4 nanoparticles show an efficient photocatalytic activity in liquid phase degradation of organic dyes. The decomposition rates of methyl orange and methylene blue over the present ZnGa 2 O 4 nanoparticles are higher than those of commercial P25 (Degussa Co)

  3. Electronic structure of Ni/sub 3/Al and Ni/sub 3/Ga alloys

    CERN Document Server

    Pong, W F; Chang, Y K; Tsai, M H; Hsieh, H H; Pieh, J Y; Tseng, P K; Lee, J F; Hsu, L S

    1999-01-01

    This work investigates the charge transfer and Al(Ga) p-Ni d hybridization effects in the intermetallic Ni/sub 3/Al(Ni/sub 3/Ga) alloy using the NiL/sub 3.2/- and K-edge and Al(Ga)K X-ray absorption near edge structure (XANES) measurements. We find that the intensity of white-line features at the NiL/sub 3.2/-edge in the Ni/sub 3/Al(Ni /sub 3/Ga) alloy decreased in comparison with that of pure Ni, which can be attributed to the enhancement of Ni3d states filling and the depletion of the density of Ni 3d unoccupied states in the Ni/sub 3 /Al(Ni/sub 3/Ga) alloy. Two clear features are also observed in the Ni/sub 3/Al(Ni/sub 3/Ga) XANES spectrum at the Al(Ga) K-edge, which can be assigned to the Al(Ga) unoccupied 3p (4p) states and their hybridized states with the Ni 3d/4sp states above the Fermi level in Ni/sub 3/Al(Ni/sub 3/Ga). The threshold at Al K-edge XANES for Ni/sub 3/Al clearly shifts towards higher photon energies relative to that of pure Al, indicating that Al loses charges upon forming Ni/sub 3 /Al. ...

  4. Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

    Science.gov (United States)

    Jameel, D. A.; Aziz, M.; Felix, J. F.; Al Saqri, N.; Taylor, D.; Albalawi, H.; Alghamdi, H.; Al Mashary, F.; Henini, M.

    2016-11-01

    This article reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. In addition, the inhomogeneity of the interface between various GaAs substrates and SPAN is investigated in terms of barrier height and ideality factor by performing I-V measurements at different temperatures (20-420 K). The I-V results indicate that the value of the rectification ratio (IF/IR) at 0.5 V is higher for SPAN/(311)B GaAs samples than for SPAN/(100) GaAs and SPAN/(311)A GaAs samples. Moreover, the barrier height decreases and the ideality factor increases with decreasing temperature for all three heterostructure devices. The high value of mean barrier Φbarb of SPAN/(311)B (calculated from the plots of Φb 0 as a function of 1/2kT) confirms that the GaAs substrate orientation results in an increase of barrier homogeneities. Furthermore, the C-V characteristics were obtained at room temperature. The C-V measurements showed that the carrier distributions at the interface and away from the interface in high index (311) GaAs orientations are more uniform and have better barrier homogeneity than those grown on the conventional (100) GaAs substrates.

  5. Microhardness of epitaxial layers of GaAs doped with rare earths

    International Nuclear Information System (INIS)

    Kulish, U.M.; Gamidov, Z.S.; Kuznetsova, I.Yu.; Petkeeva, L.N.; Borlikova, G.V.

    1989-01-01

    Results of the study of microhardness of GaAS layer doped by certain rare earths - Gd, Tb, Dy - are presented. The assumption is made that the higher is the value of the first potential of rare earth impurity ionization (i.e. the higher is the filling of 4f-shell), the lower is the effect of the element on electric and mechanical properties of GaAs epitaxial layers

  6. Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2002-01-01

    The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

  7. Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment

    Science.gov (United States)

    Liu, Hui; Zhang, Zongjing; Luo, Weijun

    2018-06-01

    The mechanism of reverse gate leakage current of AlGaN/GaN HEMTs with two different surface treatment methods are studied by using C-V, temperature dependent I-V and theoretical analysis. At the lower reverse bias region (VR >- 3.5 V), the dominant leakage current mechanism of the device with N2 plasma surface treatment is the Poole-Frenkel emission current (PF), and Trap-Assisted Tunneling current (TAT) is the principal leakage current of the device which treated by HCl:H2O solution. At the higher reverse bias region (VR current of the device with N2 plasma surface treatment is one order of magnitude smaller than the device which treated by HCl:H2O solution. This is due to the recovery of Ga-N bond in N2 plasma surface treatment together with the reduction of the shallow traps in post-gate annealing (PGA) process. The measured results agree well with the theoretical calculations and demonstrate N2 plasma surface treatment can reduce the reverse leakage current of the AlGaN/GaN HEMTs.

  8. Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

    International Nuclear Information System (INIS)

    Dhifallah, I.; Daoudi, M.; Bardaoui, A.; Eljani, B.; Ouerghi, A.; Chtourou, R.

    2011-01-01

    Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E e-hh ) and electron-light-hole (E e-lh ) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-δ-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-δ-doped samples, we have determined the internal electric field introduced by ionized Si-δ-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: → Studying HEMTs structures with different silicon doping content. → An increase of the electric field in the InAs layer with increasing Si content. → The interband energy transitions in the HEMTs structures have been obtained from PR. → Experimental and theoretical values of transitions energies were in good agreement.

  9. Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

    Science.gov (United States)

    Monavarian, M.; Rashidi, A.; Aragon, A. A.; Oh, S. H.; Rishinaramangalam, A. K.; DenBaars, S. P.; Feezell, D.

    2018-01-01

    High-speed InGaN/GaN blue light-emitting diodes (LEDs) are needed for future gigabit-per-second visible-light communication systems. Large LED modulation bandwidths are typically achieved at high current densities, with reports close to 1 GHz bandwidth at current densities ranging from 5 to 10 kA/cm2. However, the internal quantum efficiency (IQE) of InGaN/GaN LEDs is quite low at high current densities due to the well-known efficiency droop phenomenon. Here, we show experimentally that nonpolar and semipolar orientations of GaN enable higher modulation bandwidths at low current densities where the IQE is expected to be higher and power dissipation is lower. We experimentally compare the modulation bandwidth vs. current density for LEDs on nonpolar (10 1 ¯ 0 ), semipolar (20 2 ¯ 1 ¯) , and polar (" separators="|0001 ) orientations. In agreement with wavefunction overlap considerations, the experimental results indicate a higher modulation bandwidth for the nonpolar and semipolar LEDs, especially at relatively low current densities. At 500 A/cm2, the nonpolar LED has a 3 dB bandwidth of ˜1 GHz, while the semipolar and polar LEDs exhibit bandwidths of 260 MHz and 75 MHz, respectively. A lower carrier density for a given current density is extracted from the RF measurements for the nonpolar and semipolar LEDs, consistent with the higher wavefunction overlaps in these orientations. At large current densities, the bandwidth of the polar LED approaches that of the nonpolar and semipolar LEDs due to coulomb screening of the polarization field. The results support using nonpolar and semipolar orientations to achieve high-speed LEDs at low current densities.

  10. Benchmarking surface signals when growing GaP on Si in CVD ambients

    Energy Technology Data Exchange (ETDEWEB)

    Doescher, Henning

    2010-10-26

    The present work investigates the formation of GaP films prepared on Si(100) surfaces and their anti-phase disorder in metalorganic vapor phase epitaxy (MOVPE) ambients. GaP films grown on Si(100) substrates served as a lattice matched model system for the crucial III-V/Si(100) interface to form silicon-based quasi substrates. A variety of surface-sensitive methods was required to establish suitable silicon substrate preparation and subsequent GaP growth free of anti-phase domains (APDs) by analyzing the substrate surface, the interface and the epitaxial films resulting from the heteroepitaxial nucleation process. Thorough investigations in the MOVPE ambients and an appropriate improvement of the equipment and of the VPE preparation process of the substrates led to clean Si(100) surfaces free of oxygen and other contaminants, as was evidenced by Xray photoelectron spectroscopy. Predominantly double-layer stepped Si(100) surfaces, as a prerequisite for subsequent III-V integration, were obtained for 0.1 , 2 and 6 misorientation in [011] direction. In contrast to standard preparation in ultra-high vacuum (UHV), the double-layer steps on 0.1 and 2 samples featured dimers oriented perpendicular to the step edges, contradicting well-established results with and without hydrogen coverage obtained in UHV. This striking difference was attributed to the presence of hydrogen as a process gas in the MOVPE environment leading to a silicon surface covered by monohydrides after substrate preparation, as was determined by Fourier-transform infrared spectroscopy (FTIR), while reflectance anisotropy spectroscopy (RAS) showed the absence of hydrogen termination at higher temperatures. On these substrates, optical in situ spectroscopy was established as a method for the quantitative evaluation of the APD content in GaP heteroepitaxy. The analysis required a detailed understanding of the GaP(100) surface reconstructions, which have been described theoretically in the literature and

  11. InGaN/GaN Nanowire LEDs and Lasers

    KAUST Repository

    Zhao, Chao

    2016-01-01

    The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

  12. AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

    Science.gov (United States)

    Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

    1997-10-01

    Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

  13. Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model

    International Nuclear Information System (INIS)

    Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Koehler, K.; Johs, B.

    2000-01-01

    Spectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, Al x Ga 1-x N (x le 0.16), and In 0.13 Ga 0.87 N were deduced. Further, the dependence of the Al x Ga 1-x N band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the Al x Ga 1-x N gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure

  14. Gold free contacts to AlGaN/GaN heterostructures

    NARCIS (Netherlands)

    Hajlasz, Marcin

    2018-01-01

    Transistors and diodes based on AlGaN/GaN are suitable candidates for high-voltage and high-speed electronics due to the GaN material properties such as wide bandgap, large breakdown field, high electron saturation velocity and good thermal conductivity. When thin AlGaN layer is grown epitaxially on

  15. Gas sensing with AlGaN/GaN 2DEG channels

    NARCIS (Netherlands)

    Offermans, P.; Vitushinsky, R.; Crego-Calama, M.; Brongersma, S.H.

    2011-01-01

    AlGaN/GaN shows great promise as a generic platform for (bio-)chemical sensing because of its robustness and intrinsic sensitivity to surface charge or dipoles. Here, we employ the two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN layers grown on Si substrates for the

  16. Exploring the radiosynthesis and in vitro characteristics of [68Ga]Ga-DOTA-Siglec-9

    DEFF Research Database (Denmark)

    Jensen, Svend Borup; Käkelä, Meeri; Jødal, Lars

    2017-01-01

    (Siglec-9) "CARLSLSWRGLTLCPSK" bind to VAP-1 and hence makes the radioactive analogues of this compound ([68 Ga]Ga-DOTA-Siglec-9) interesting as a non-invasive visualizing marker of inflammation. Three different approaches to the radiosynthesis of [68 Ga]Ga-DOTA-Siglec-9 are presented and compared...

  17. Characterization of GaN/AlGaN epitaxial layers grown

    Indian Academy of Sciences (India)

    GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers ...

  18. Exciton binding energy in wurtzite InGaN/GaN quantum wells

    International Nuclear Information System (INIS)

    Park, Seoung-Hwan; Kim, Jong-Jae; Kim, Hwa-Min

    2004-01-01

    The internal field and carrier density effects on the exciton binding energies in wurtzite (WZ) InGaN/GaN quantum-well (QW) structures are investigated using the multiband effective-mass theory, and are compared with those obtained from the at-band model and with those of GaN/AlGaN QW structures. The exciton binding energy is significantly reduced with increasing sheet carrier density, suggesting that excitons are nearly bleached at densities around 10 12 cm -2 for both InGaN/GaN and GaN/AlGaN QW structures. With the inclusion of the internal field, the exciton binding energy is substantialy reduced compared to that of the at-band model in the investigated region of the wells. This can be explained by a decrease in the momentum matrix element and an increase in the inverse screening length due to the internal field. The exciton binding energy of the InGaN/GaN structure is smaller than that of the GaN/AlGaN structure because InGaN/GaN structures have a smaller momentum matrix element and a larger inverse screening length than GaN/AlGaN structures.

  19. InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Oswald, Jiří; Vyskočil, Jan; Kuldová, Karla; Šimeček, Tomislav; Hazdra, P.; Caha, O.

    2010-01-01

    Roč. 312, č. 8 (2010), 1383-1387 ISSN 0022-0248 R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.737, year: 2010

  20. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    OpenAIRE

    Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

    2014-01-01

    We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.