Extended x-ray absorption fine structure in Ga1-xMnxN/SiC films with high Mn content

Science.gov (United States)

Sancho-Juan, O.; Martínez-Criado, O.; Cantarero, A.; Garro, N.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.; Ploog, K.

2011-05-01

In this study, the local atomic structure of highly homogeneous Ga1-xMnxN alloy films (0.03Ga K-edge extended x-ray absorption fine structure measurements. From the curve fitting, the structural parameters corresponding to the first two atomic shells surrounding both Ga and Mn atoms are reported. In the Ga1-xMnxN films, grown by molecular beam epitaxy, the Mn atoms are in tetrahedral configuration, independent of the Mn concentration; that is, they are in a substitutional site, MnGa, in the wurtzite structure. A small increase in the interatomic distances has been found with increasing Mn content. The Debye-Waller factor does not show a significant trend as Mn content increases, which suggests the presence of short-range disorder in the GaN lattice. Ab initio calculations of the structural parameter for two different Mn concentrations are consistent with the experimental results.

Growth, yield and quality responses to gibberellic acid (GA 3 ) of ...

African Journals Online (AJOL)

With regard to fruit quality, the application of GA3 at 50 mg/L increased total soluble solids (TSS), total sugar, total biomass and total flavonoids content in the fruits by 112, 97, 45 and 92% compared with the control treatment. In addition, anthocyanin content, total phenol and antioxidant activity was higher in GA3 treated ...

A MAS NMR and DRIFT study of the Ga species in Ga/H-ZSM5 catalysts and their effect on propane ammoxidation

Energy Technology Data Exchange (ETDEWEB)

Pal, P. [Indian Inst. of Petroleum, Dehradun (India). Catalysis Division; Quartararo, J. [Liverpool Univ., Liverpool (United Kingdom). Leverhulme Centre for Innovative Catalysis, Dept. of Chemistry; Abd Hamid, S.B. [Malaya Univ., Postgraduate School, Bangunan (Malaysia); Derouane, E.G. [Algarve Univ., Faro (Portugal). Faculdade de Ciencias e Tecnologia; Vedrine, J.C. [Laboratoire de Physico-Chimie des Surface, Paris (France). Faculdade de Ciencias e Tecnologia; Magusin, P.C.M.M.; Anderson, B.G. [Eindhoven Univ. of Technology, Eindhoven (Netherlands). Schuit Institute of Catalysis

2005-07-01

This paper presents the results of a study that sought information about the nature and environment of the gallium (Ga) species in Ga/H-ZSM5 zeolites following H{sub 2}-O{sub 2} redox treatments applied during their activation by use of magic-angle spinning (MAS) {sup 71}Ga, {sup 27}Al, and {sup 29}Si NMR spectroscopy (Ga coordination) complemented by diffuse reflectance FT IR (DRIFT) spectroscopy (Bronsted acidity). This information was then correlated with their catalytic behavior for the ammoxidation of propane. Ga species were observed in several environments: octahedrally coordinated gallium in small Ga{sub 2}O{sub 3} particles at the external surface of the zeolite crystals; octahedrally coordinated gallium in GaO(OH) or related species; and tetrahedrally coordinated gallium in cationic-exchange positions inside the zeolite. Redox (H{sub 2}-O{sub 2}) cycles promote the migration of gallium from the GaO(OH) or Ga{sub 2}O{sub 3} species at the external surface of the zeolite crystals to cationic-exchange sites within the zeolite channels. It was concluded that the redox treatment had a beneficial effect on its catalytic performance for the ammoxidation of propane, which occurs via a bifunctional mechanism. The main product was acetonitrile at high gallium and aluminium contents. It was suggested that higher yields in acrylonitrile could be obtained through Ga-modified zeolites with a higher gallium and lower aluminium content. 22 refs., 1 tab., 6 figs.

Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge

International Nuclear Information System (INIS)

Terasako, Tomoaki; Nomoto, Junichi; Makino, Hisao; Yamamoto, Naoki; Shirakata, Sho; Yamamoto, Tetsuya

2015-01-01

Structural properties of highly c-axis oriented polycrystalline Ga-doped ZnO (GZO) films prepared by ion-plating with a DC arc discharge were studied in terms of the oxygen gas flow rate (F O2 ) introduced into the chamber during the deposition process and the Ga 2 O 3 content in the GZO sintered pellet. The X-ray diffraction (XRD) measurements revealed that the GZO films have the residual compressive stress along the a-axis direction (in-plane) and the tensile stress along the c-axis direction (out-of-plane). The increase in F O2 or the increase in Ga 2 O 3 content was effective for relaxing the in-plane compressive stress induced by the so-called atomic peening effect. The positive correlation between the carrier concentration (n) and the primitive cell volume (V) would be due to the incorporation of Ga atoms substituting Zn sites (Ga Zn s) together with the generation of n-type intrinsic defects or complex defects. - Highlights: • Films of Ga-doped ZnO (GZO) films were deposited by ion-plating with a DC arc discharge. • Structural properties of GZO films were examined by X-ray diffraction measurements. • GZO films had the residual compressive stress along the a-axis direction. • There was the correlation between the carrier concentration and the cell volume.

Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge

Energy Technology Data Exchange (ETDEWEB)

Terasako, Tomoaki, E-mail: terasako.tomoaki.mz@ehime-u.ac.jp [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Nomoto, Junichi; Makino, Hisao; Yamamoto, Naoki [Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan); Shirakata, Sho [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Yamamoto, Tetsuya [Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan)

2015-12-01

Structural properties of highly c-axis oriented polycrystalline Ga-doped ZnO (GZO) films prepared by ion-plating with a DC arc discharge were studied in terms of the oxygen gas flow rate (F{sub O2}) introduced into the chamber during the deposition process and the Ga{sub 2}O{sub 3} content in the GZO sintered pellet. The X-ray diffraction (XRD) measurements revealed that the GZO films have the residual compressive stress along the a-axis direction (in-plane) and the tensile stress along the c-axis direction (out-of-plane). The increase in F{sub O2} or the increase in Ga{sub 2}O{sub 3} content was effective for relaxing the in-plane compressive stress induced by the so-called atomic peening effect. The positive correlation between the carrier concentration (n) and the primitive cell volume (V) would be due to the incorporation of Ga atoms substituting Zn sites (Ga{sub Zn}s) together with the generation of n-type intrinsic defects or complex defects. - Highlights: • Films of Ga-doped ZnO (GZO) films were deposited by ion-plating with a DC arc discharge. • Structural properties of GZO films were examined by X-ray diffraction measurements. • GZO films had the residual compressive stress along the a-axis direction. • There was the correlation between the carrier concentration and the cell volume.

Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

Science.gov (United States)

Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

2016-12-01

InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

Teores de cátions dos vinhos da Serra Gaúcha Cation content of wines from the Serra Gaúcha region

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Luiz Antenor Rizzon

2008-09-01

Full Text Available Os cátions representam uma parte das cinzas e podem contribuir para caracterizar os vinhos de diferentes regiões vitícolas. O objetivo do presente trabalho foi determinar a concentração dos principais cátions de vinhos da Serra Gaúcha, RS, visando a sua caracterização. Foram analisados 600 vinhos de mesa e 380 vinhos finos, ambos distribuídos nas categorias tinto, rosado e branco. As análises de K+, Na+, Li+ e Rb+ foram feitas por emissão de chama, enquanto que as de Ca++, Mg++, Mn++, Fe++, Cu++ e Zn++ por absorção atômica. Os dados foram submetidos à análise de variância, ao teste de Tukey e à Análise de Componentes Principais (ACP. A análise de variância não mostrou diferenças significativas nas concentrações de Na+, Cu++ e Zn++ nos diferentes tipos de vinhos da Serra Gaúcha; os vinhos de mesa apresentaram maior concentração de Mn++ em relação aos finos; os de mesa e os rosados finos apresentaram concentração mais elevada de Fe++; enquanto que os tintos finos apresentaram concentrações mais elevadas de K+ e Rb+. A ACP permitiu diferenciar os vinhos em relação à cor - tinto, rosado e branco - e ao tipo - fino e de mesa.Cations represent an important part of the ash content and they can contribute to characterize wines from different viticultural regions. The purpose of this work was to determine the concentration of the main cations in the wines of the Serra Gaúcha region in Brazil. Six hundred table wines, primarily from American/hybrid varieties, and 380 wines elaborated with Vitis vinifera varieties, both including red, rosé and white wines, were analyzed. The analyses of K+, Na+, Li+ and Rb+ were performed by flame emission, while Ca++, Mg++, Mn++, Fe++, Cu++ and Zn++ analyses were performed by atomic absorption. Data were submitted to analysis of variance and the Tukey test and to Principal Component Analysis (PCA. Results showed that there was no significant difference in the concentration of Na

Highly Sensitive ZnO(Ga, In for Sub-ppm Level NO2 Detection: Effect of Indium Content

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Natalia Vorobyeva

2017-06-01

Full Text Available Nanocrystalline ZnO, ZnO(Ga, and ZnO(Ga, In samples with different indium contents were prepared by wet-chemical method and characterized in detail by ICP-MS and XRD methods. Gas sensing properties toward NO2 were studied at 150–450 °C by DC conductance measurements. The optimal temperature for gas sensing experiments was determined. The dependence of the ZnO(Ga, In sensor signal to NO2 at 250 °C correlates with the change of conductivity of the samples. The introduction of indium into the system leads to an increase in the values of the sensor signal in the temperature range T < 250 °C. The investigation of the local sample conductivity by scanning spreading resistance microscopy demonstrates that, at high indium content, the sensor properties are determined by the In–Ga–Zn–O layer that forms on the ZnO surface.

Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

Science.gov (United States)

Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

2017-11-01

In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

Tuning high frequency magnetic properties and damping of FeGa, FeGaN and FeGaB thin films

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Derang Cao

2017-11-01

Full Text Available A series of FeGa, FeGaN and FeGaB films with varied oblique angles were deposited by sputtering method on silicon substrates, respectively. The microstructure, soft magnetism, microwave properties, and damping factor for the films were investigated. The FeGa films showed a poor high frequency magnetic property due to the large stress itself. The grain size of FeGa films was reduced by the additional N element, while the structure of FeGa films was changed from the polycrystalline to amorphous phase by the involved B element. As a result, N content can effectively improve the magnetic softness of FeGa film, but their high frequency magnetic properties were still poor both when the N2/Ar flow rate ratio is 2% and 5% during the deposition. The additional B content significantly led to the excellent magnetic softness and the self-biased ferromagnetic resonance frequency of 1.83 GHz for FeGaB film. The dampings of FeGa films were adjusted by the additional N and B contents from 0.218 to 0.139 and 0.023, respectively. The combination of these properties for FeGa films are helpful for the development of magnetostrictive microwave devices.

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

International Nuclear Information System (INIS)

Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

2014-01-01

Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

Controlled optical properties via chemical composition tuning in molybdenum-incorporated β-Ga2O3 nanocrystalline films

Science.gov (United States)

Battu, Anil K.; Manandhar, S.; Shutthanandan, V.; Ramana, C. V.

2017-09-01

An approach is presented to design refractory-metal incorporated Ga2O3-based materials with controlled structural and optical properties. The molybdenum (Mo)-content in Ga2O3 was varied from 0 to 11 at% in the sputter-deposited Ga-Mo-O films. Molybdenum was found to significantly affect the structure and optical properties. While low Mo-content (≤4 at%) results in the formation of single-phase (β-Ga2O3), higher Mo-content results in amorphization. Chemically-induced band gap variability (Eg ∼ 1 eV) coupled with structure-modification indicates the electronic-structure changes in Ga-Mo-O. The linear relationship between chemical-composition and optical properties suggests that tailoring the optical-quality and performance of Ga-Mo-O films is possible by tuning the Mo-content.

Analysis of the effect of gallium content on the magnetomechanical behavior of single-crystal FeGa alloys using an energy-based model

International Nuclear Information System (INIS)

Atulasimha, Jayasimha; Flatau, Alison B; Cullen, James R

2008-01-01

The magnetomechanical behavior of single-crystal iron–gallium alloys with varying gallium content was found to be strongly dependent on the Ga content (Atulasimha 2006 PhD Thesis). An energy-based model (Atulasimha 2006 PhD Thesis, Armstrong and William 1997 J. Appl. Phys. 81 2321) is employed to simulate the strikingly different actuation behavior (λ–H and B–H curves under different compressive stresses) and validated against experimental data for 19, 24.7 and 29 at.% Ga, [100] oriented, slow-cooled single-crystal FeGa alloys. The effect of gallium content on the model parameters, specifically the cubic magnetocrystalline anisotropy constants and the Armstrong-smoothing factor Ω, their physical significance and ultimately their effect on the magnetomechanical behavior are analyzed and explained

Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs

Energy Technology Data Exchange (ETDEWEB)

Timm, R.

2007-12-14

In this work, cross-sectional scanning tunneling microscopy and spectroscopy are used for the first time to study the shape, size, strain, chemical composition, and electronic properties of capped GaSb/GaAs QDs at the atomic scale. By evaluating such structural results on a variety of nanostructures built using different epitaxy methods and growth conditions, details on the underlying QD formation processes can be revealed. A cross-over from flat quantum wells (QWs) to optically active QDs can be observed in samples grown by metalorganic chemical vapor deposition (MOCVD) with increasing amount of GaSb, including self-assembled Sb accumulations within a still two-dimensional layer and tiny three-dimensional GaSb islands probably acting as precursor structures. The QWs consist of significantly intermixed material with stoichiometries of maximally 50% GaSb, additionally exhibiting small gaps filled with GaAs. A higher GaSb content up to nearly pure material is found in the QDs, being characterized by small sizes of up to 8 nm baselength and about 2 nm height. In spite of the intermixing, all nanostructures have rather abrupt interfaces, and no significant Sb segregation in growth direction is observed. This changes completely when molecular beam epitaxy (MBE) is used as growth method, in which case individual Sb atoms are found to be distributed over several nm above the nanostructures. Massive group-V atomic exchange processes are causing this strong inter-mixing and Sb segregation during GaAs overgrowth. In combination with the large strain inherent to GaSb/GaAs QDs, this segregation upon overgrowth is assumed to be the reason for a unique structural phenomenon: All MBE-grown QDs, independent of the amount of deposited GaSb, exhibit a ring structure, consisting of a ring body of high GaSb content and a more or less extended central gap filled with GaAs. These rings have formed in a self-assembled way even when the initial GaSb layer was overgrown considerably fast

Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction

Science.gov (United States)

Wang, Yibo; Liu, Yan; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

2017-06-01

We investigate GaAsBi/GaAsN system for the design of type-II staggered hetero tunneling field-effect transistor (hetero-TFET). Strain-symmetrized GaAsBi/GaAsN with effective lattice match to GaAs exhibits a type-II band lineup, and the effective bandgap EG,eff at interface is significantly reduced with the incorporation of Bi and N elements. The band-to-band tunneling (BTBT) rate and drive current of GaAsBi/GaAsN hetero-TFETs are boosted due to the utilizing of the type-II staggered tunneling junction with the reduced EG,eff. Numerical simulation shows that the drive current and subthreshold swing (SS) characteristics of GaAsBi/GaAsN hetero-TFETs are remarkably improved by increasing Bi and N compositions. The dilute content GaAs0.85Bi0.15/GaAs0.92N0.08 staggered hetero-nTFET achieves 7.8 and 550 times higher ION compared to InAs and In0.53Ga0.47As homo-TFETs, respectively, at the supply voltage of 0.3 V. GaAsBi/GaAsN heterostructure is a potential candidate for high performance TFET.

Influence of strain on the growth of thick InGaN layers

International Nuclear Information System (INIS)

Stellmach, J.; Leyer, M.; Pristovsek, M.; Kneissl, M.

2008-01-01

The growth of high quality InGaN alloys is critical for a number of various optoelectronic device applications like LEDs and laser diodes. Nevertheless, the exact growth mechanisms of InGaN with high indium content is still not fully understood. In the present study the growth of thick InGaN layers was systematically investigated. InGaN films with thicknesses between ∝35 nm and ∝200 nm were grown on GaN templates with metal-organic vapour phase epitaxy (MOVPE). The group III partial pressures of 1.1 Pa for TMGa, 0.45 Pa for TMIn and the V/III-ratio of 1600 were kept constant. The growth temperature was varied between 750 C and 800 C. The growth of InGaN layer was characterized by in-situ spectroscopic ellipsometry (SE). Up to temperatures of 790 C structural analysis by XRD showed two strained layers with different indium content. The formation of the layer structure was investigated by varying the growth times at 770 C. In the first 500 s (35 nm) a rough (rms=9 nm) and pseudomorphically strained InGaN layer with low indium content (4%) is formed. Between 500 s and 1000 s this strained layer becomes smoother (rms=3.4 nm). For thicknesses beyond the In content increases (8% at 84 nm) and reaches 11% at 200 nm. We propose that the transition from a first layer with a low indium content to a second layer with an higher indium content is due to a gradual release of strain

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

International Nuclear Information System (INIS)

Dinh, Duc V.; Zubialevich, V. Z.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Alam, S. N.; Parbrook, P. J.; Caliebe, M.; Scholtz, F.

2014-01-01

InGaN layers were grown simultaneously on (112 ¯ 2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750 °C), the indium content ( ¯ 2) and (0001) InGaN layers was similar. However, for temperatures less than 750 °C, the indium content of the (112 ¯ 2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112 ¯ 2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112 ¯ 2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112 ¯ 2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

Meningiomas: A Comparative Study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for Molecular Imaging in Mice

Science.gov (United States)

Soto-Montenegro, María Luisa; Peña-Zalbidea, Santiago; Mateos-Pérez, Jose María; Oteo, Marta; Romero, Eduardo; Morcillo, Miguel Ángel; Desco, Manuel

2014-01-01

Purpose The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three 68Ga-DOTA-labeled somatostatin analogues (68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE) using PET/CT in a murine model with subcutaneous meningioma xenografts. Methods The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN). 68Ga-DOTATOC, 68Ga-DOTANOC, and 68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L) and tumor-to-muscle (T/M) SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt) was determined. Results Hepatic SUVmax and Vt were significantly higher with 68Ga-DOTANOC than with 68Ga-DOTATOC and 68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between 68Ga-DOTATATE and 68Ga-DOTATOC, both of which had a higher fraction than 68Ga-DOTANOC. The T/M SUV ratio was significantly higher with 68Ga-DOTATATE than with 68Ga-DOTATOC and 68Ga-DOTANOC. The Vt for tumor was higher with 68Ga-DOTATATE than with 68Ga-DOTANOC and relatively similar to that of 68Ga-DOTATOC. Conclusions This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with 68Ga-DOTATATE and 68Ga-DOTATOC, uptake was higher with 68Ga-DOTATATE in the tumor than with 68Ga-DOTANOC and 68Ga-DOTATOC, suggesting a higher diagnostic value of 68Ga-DOTATATE for detecting meningiomas. PMID:25369268

Meningiomas: a comparative study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for molecular imaging in mice.

Directory of Open Access Journals (Sweden)

María Luisa Soto-Montenegro

Full Text Available The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three (68Ga-DOTA-labeled somatostatin analogues ((68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE using PET/CT in a murine model with subcutaneous meningioma xenografts.The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN. (68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L and tumor-to-muscle (T/M SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt was determined.Hepatic SUVmax and Vt were significantly higher with (68Ga-DOTANOC than with (68Ga-DOTATOC and (68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between (68Ga-DOTATATE and (68Ga-DOTATOC, both of which had a higher fraction than (68Ga-DOTANOC. The T/M SUV ratio was significantly higher with (68Ga-DOTATATE than with (68Ga-DOTATOC and (68Ga-DOTANOC. The Vt for tumor was higher with (68Ga-DOTATATE than with (68Ga-DOTANOC and relatively similar to that of (68Ga-DOTATOC.This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with (68Ga-DOTATATE and (68Ga-DOTATOC, uptake was higher with (68Ga-DOTATATE in the tumor than with (68Ga-DOTANOC and (68Ga-DOTATOC, suggesting a higher diagnostic value of (68Ga-DOTATATE for detecting meningiomas.

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong; Oehler, Fabrice; Kappers, Menno J.; Oliver, Rachel A., E-mail: rao28@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2015-08-24

A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

International Nuclear Information System (INIS)

Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong; Oehler, Fabrice; Kappers, Menno J.; Oliver, Rachel A.

2015-01-01

A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness

Nanomaterial disordering in AlGaN/GaN UV LED structures

International Nuclear Information System (INIS)

Shabunina, E I; Levinshtein, M E; Kulagina, M M; Petrov, V N; Ratnikov, V V; Smirnova, I N; Troshkov, S I; Shmidt, N M; Kurin, S Yu; Makarov, Yu N; Chernyakov, A E; Usikov, A S; Helava, H

2015-01-01

Multifractal analysis was applied to characterize quantitatively nanostructural disordering in HVPE-grown AlGaN/GaN UV LED structures. A higher level of leakage currents shunting the active region of LEDs by an extended defect system is correlated with higher values of multifractal parameters (MFs). As a result, the concentration of injected carriers participating in radiative recombination in the active region is reduced. MFs and the conductivity of quasi-ohmic shunts localized in an extended defect system are higher in AlGaN/GaN structures than in InGaN/GaN structures. It is one of the reasons behind the low external quantum efficiency of AlGaN/GaN UV LEDs. (paper)

Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

International Nuclear Information System (INIS)

Cao, Ruyue; Zhang, Zhaofu; Wang, Changhong; Li, Haobo; Dong, Hong; Liu, Hui; Wang, Weichao; Xie, Xinjian

2015-01-01

Understanding of GaN interfacing with GaAs is crucial for GaN to be an effective interfacial layer between high-k oxides and III-V materials with the application in high-mobility metal-oxide-semiconductor field effect transistor (MOSFET) devices. Utilizing first principles calculations, here, we investigate the structural and electronic properties of the GaN/GaAs interface with respect to the interfacial nitrogen contents. The decrease of interfacial N contents leads to more Ga dangling bonds and As-As dimers. At the N-rich limit, the interface with N concentration of 87.5% shows the most stability. Furthermore, a strong band offsets dependence on the interfacial N concentration is also observed. The valance band offset of N7 with hybrid functional calculation is 0.51 eV. The electronic structure analysis shows that significant interface states exist in all the GaN/GaAs models with various N contents, which originate from the interfacial dangling bonds and some unsaturated Ga and N atoms. These large amounts of gap states result in Fermi level pinning and essentially degrade the device performance

Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN

International Nuclear Information System (INIS)

Zainal, N.; Novikov, S.V.; Akimov, A.V.; Staddon, C.R.; Foxon, C.T.; Kent, A.J.

2012-01-01

The dependence of the hexagonal fraction with thickness in MBE-grown bulk cubic (c-) GaN epilayer is presented in this paper. A number of c-GaN epilayers with different thicknesses were characterized via PL and XRD measurements. From the PL spectra, the signal due to h-GaN inclusions increases as the thickness of the c-GaN increases. On the contrary, in the XRD diffractogram, c-GaN shows a dominant signal at all thicknesses, and only a weak peak at ∼35° is observed in the diffractogram, implying the existence of a small amount of h-GaN in the c-GaN layer. The best quality of c-GaN is observed in the first 10 μm of GaN on the top of GaAs substrate. Even though the hexagonal content increases with the thickness, the average content remains below 20% in c-GaN layers up to 50 μm thick. The surface morphology of thick c-GaN is also presented.

Lattice vibrations study of Ga1-xInxAsySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy

International Nuclear Information System (INIS)

Olvera-Herandez, J; Olvera-Cervantes, J; Rojas-Lopez, M; Navarro-Contreras, H; Vidal, M A; Anda, F de

2006-01-01

Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga 1-x In x As y Sb 1-y alloys with low (In, As) contents (0.03 0 C. High Resolution X-Ray Diffraction results showed profiles associated with a quaternary layer lattice matched to the GaSb substrate as obtained from the (004) reflection. The experimental diffractograms were simulated to estimate alloy composition, thickness and lattice mismatch of the layer. Raman scattering results show phonon frequencies associated to the TO and LO GaAs-like modes as well as GaSb + InAs-like mode, which are characteristic of this quaternary alloy. The As content dependence of the phonon frequency measured in this alloy for low (In, As) contents agree well with the modified Random-Element Isodisplacement (REI) model and also with other available experimental reports. This method can also be used to estimate alloy compositions for this kind of quaternary alloys

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.

Science.gov (United States)

Zhang, Feng; Ikeda, Masao; Zhang, Shu-Ming; Liu, Jian-Ping; Tian, Ai-Qin; Wen, Peng-Yan; Cheng, Yang; Yang, Hui

2016-12-01

The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

Energy Technology Data Exchange (ETDEWEB)

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

DC electrodeposition of NiGa alloy nanowires in AAO template

Energy Technology Data Exchange (ETDEWEB)

Maleki, K. [Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Iran, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Sanjabi, S., E-mail: sanjabi@modares.ac.ir [Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Iran, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Alemipour, Z. [Department of Physics, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

2015-12-01

NiGa alloy nanowires were electrodeposited from an acidic sulfate bath into nanoporous anodized alumina oxide (AAO). This template was fabricated by two-step anodizing. The effects of bath composition and current density were explored on the Ga content of electrodeposited nanowires. The Ga content in the deposits was increased by increasing both Ga in the bath composition and electrodepositing current density. The NiGa alloy nanowires were synthesized for Ga content up to 2–4% without significant improving the magnetic properties. Above this threshold Ga clusters were formed and decreased the magnetic properties of the nanowires. For Ga content of the alloy above 30%, the wires were too short and incomplete. X-ray diffraction patterns reveal that the significant increase of Ga content in the nanowires, changes the FCC crystal structure of Ni to an amorphous phase. It also causes a sizeable increase in the Ga cluster size; these both lead to a significant reduction in the coercivity and the magnetization respectively. - Highlights: • NiGa alloy nanowires were electrodeposited from acidic sulphate baths into nanoporous anodized alumina oxide (AAO) template. • The Ga content was increased by increasing the Ga in the bath composition and electrodeposition current density. • The magnetic parameters such as coercivity and magnetization were not changed for the alloy nanowire with Ga content less than 4%.

Engineering Potato Starch with a Higher Phosphate Content.

Directory of Open Access Journals (Sweden)

Xuan Xu

Full Text Available Phosphate esters are responsible for valuable and unique functionalities of starch for industrial applications. Also in the cell phosphate esters play a role in starch metabolism, which so far has not been well characterized in storage starch. Laforin, a human enzyme composed of a carbohydrate-binding module and a dual-specificity phosphatase domain, is involved in the dephosphorylation of glycogen. To modify phosphate content and better understand starch (dephosphorylation in storage starch, laforin was engineered and introduced into potato (cultivar Kardal. Interestingly, expression of an (engineered laforin in potato resulted in significantly higher phosphate content of starch, and this result was confirmed in amylose-free potato genetic background (amf. Modified starches exhibited altered granule morphology and size compared to the control. About 20-30% of the transgenic lines of each series showed red-staining granules upon incubation with iodine, and contained higher phosphate content than the blue-stained starch granules. Moreover, low amylose content and altered gelatinization properties were observed in these red-stained starches. Principle component and correlation analysis disclosed a complex correlation between starch composition and starch physico-chemical properties. Ultimately, the expression level of endogenous genes involved in starch metabolism was analysed, revealing a compensatory response to the decrease of phosphate content in potato starch. This study provides a new perspective for engineering starch phosphate content in planta by making use of the compensatory mechanism in the plant itself.

Luminescence dynamics in AlGaN with AlN content of 20%

KAUST Repository

Soltani, Sonia; Bouzidi, Mouhamed; Touré , Alhousseynou; Gerhard, Marina; Halidou, Ibrahim; Chine, Zied; El Jani, Belgacem; Shakfa, Mohammad Khaled

2016-01-01

Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

Luminescence dynamics in AlGaN with AlN content of 20%

KAUST Repository

Soltani, Sonia

2016-12-15

Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

Physics, MOVPE growth and investigation of m-plane GaN films and InGaN/GaN quantum wells on γ-LiAlO2 substrates

International Nuclear Information System (INIS)

Mauder, Christof

2011-01-01

excitation levels. For higher indium contents, the peaks become broader and weaker and exhibit a slight wavelength shift at higher intensities. Indium accumulation near defects or surface pits is seen as most likely origin. Higher indium contents on a nm scale are also blamed for the lower degree of polarization of emission compared to literature reports on nonpolar MQW. Indium clusters change the spatial distribution of holes within the valence subbands and therefore affect the recombination properties. LED based on (1-100) InGaN/GaN MQW were successfully fabricated. Although the light output is still significantly lower compared to devices based on layers deposited along the (0001) orientation, the strong blue emission at a forward voltage of only 4.1 V appears already quite promising. Main challenges for further improvement are the optimization of the upper p-type contact layer and the MQW layer stack.

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

Science.gov (United States)

Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A.

2013-09-01

We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ˜ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ˜ 0.6. Surprisingly, the InxGa1-xN film with x ˜ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (˜400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

Two-dimensional electron and hole gases in GaN/AlGaN heterostructures; Zweidimensionale Elektronen- und Loechergase in GaN/AlGaN-Heterostrukturen

Energy Technology Data Exchange (ETDEWEB)

Link, A.

2004-12-01

The aim of this PhD thesis is to investigate the electronic properties of electron and hole gases in GaN/AlGaN heterostructures. Particularly, a deeper and broadened understanding of scattering mechanisms and transport properties is in the focus of this work. The main experimental techniques used for this purpose are the study of Shubnikov-de Haas (SdH) effect and Hall measurements at low temperatures. By means of these magnetotransport measurements, a series of GaN/AlGaN heterostructures with different Al content of the AlGaN barrier were investigated. Since the sheet carrier density of the 2DEG in these semiconductor structures is strongly dependent on the Al content (n{sub s}=2 x 10{sup 12}-10{sup 13} cm{sup -2}), the variation of transport parameters was determined as a function of sheet carrier concentration. First, from the temperature dependence of the SdH oscillations the effective transport mass was calculated. A Hall bar structure with an additional gate contact was used as an alternative to tune the carrier density of a 2DEG system independent of varying structural parametes such as Al content. Thus, the scattering mechanisms were investigated in the carrier density region between 3 x 10{sup 12} and 9.5 x 10{sup 12} cm{sup -2}. The transport properties of subband electrons were studied for a 2DEG system with two occupied subbands. (orig.)

Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

International Nuclear Information System (INIS)

Lee, Hyun-Jun; Song, Pung-Keun

2014-01-01

Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

Improvement of Orange II Photobleaching by Moderate Ga3+ Doping of Titania and Detrimental Effect of Structural Disorder on Ga Overloading

Directory of Open Access Journals (Sweden)

Václav Štengl

2014-01-01

Full Text Available Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III nitrate with urea. Incorporation of Ga3+ into the anatase lattice has a clear positive effect on the photocatalytic activity under UV and Vis light irradiation up to a certain extent of Ga. Ga3+ doping decreased the size of the crystallites, increased surface area, and affected texture of the samples. Higher amount of gallium leads to the formation of a nondiffractive phase, probably photocatalytically inactive. The titania sample with 2.18 wt.% Ge3+ had the highest activity during the photocatalysed degradation in the UV and visible light regions; the total bleaching of dye Orange II was achieved within 29 minutes. Ga concentration larger than 5% (up to 15% significantly inhibited the growth of the anatase crystal domains which formed the nondiffractive phase content and led to remarkable worsening of the photobleaching efficiency.

Damp Heat Treatment of Cu(In,GaSe2 Solar Cells with Different Sodium Content

Directory of Open Access Journals (Sweden)

Felix Daume

2013-11-01

Full Text Available Long term stability is crucial to maturing any photovoltaic technology. We have studied the influence of sodium, which plays a key role in optimizing the performance of Cu(In,GaSe2 (CIGSe solar cells, on the long-term stability of flexible CIGSe solar cells on polyimide foil. The standardized procedure of damp heat exposure (85% relative humidity at 85 °C was used to simulate aging of the unencapsulated cells in multiple time steps while they were characterized by current-voltage analysis, capacitance-voltage profiling, as well as electroluminescence imaging. By comparing the aging process to cells that were exposed to heat only, it could be confirmed that moisture plays the key role in the degradation process. We found that cells with higher sodium content suffer from a more pronounced degradation. Furthermore, the experimental results indicate the superposition of an enhancing and a deteriorating mechanism during the aging process. We propose an explanation based on the corrosion of the planar contacts of the solar cell.

Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Liu, Wei [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhao, De Gang, E-mail: dgzhao@red.semi.ac.cn; Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

2015-11-15

The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed.

Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

International Nuclear Information System (INIS)

Liu, Wei; Zhao, De Gang; Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei; Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui

2015-01-01

The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed

Investigation of localization effect in GaN-rich InGaN alloys and ...

Indian Academy of Sciences (India)

Abstract. The temperature-dependent PL properties of GaN-rich InxGa1−xN alloys is investigated and S-shaped temperature dependence is observed in all InGaN samples. It is found that the origin of localization effect in samples. A and B are different from that in sample C. For samples A and B, In content fluctuations ...

Physics, MOVPE growth and investigation of m-plane GaN films and InGaN/GaN quantum wells on {gamma}-LiAlO{sub 2} substrates

Energy Technology Data Exchange (ETDEWEB)

Mauder, Christof

2011-12-20

fractions below 16% show strong, blue emission with excellent wavelength stability at increased excitation levels. For higher indium contents, the peaks become broader and weaker and exhibit a slight wavelength shift at higher intensities. Indium accumulation near defects or surface pits is seen as most likely origin. Higher indium contents on a nm scale are also blamed for the lower degree of polarization of emission compared to literature reports on nonpolar MQW. Indium clusters change the spatial distribution of holes within the valence subbands and therefore affect the recombination properties. LED based on (1-100) InGaN/GaN MQW were successfully fabricated. Although the light output is still significantly lower compared to devices based on layers deposited along the (0001) orientation, the strong blue emission at a forward voltage of only 4.1 V appears already quite promising. Main challenges for further improvement are the optimization of the upper p-type contact layer and the MQW layer stack.

Investigation on the surface characterization of Ga-faced GaN after chemical-mechanical polishing

Energy Technology Data Exchange (ETDEWEB)

Gong, Hua [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zhou, Yan; Shi, Xiaolei; Zou, Chunli; Zhang, Suman [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

2015-05-30

Highlights: • Tiny-sized nanoparticles were introduced in GaN CMP to realize a good surface. • The relationship between surface characterization and abrasive size was conducted. • An atomic step-terrace structure was achieved on GaN surface after CMP. • Pt/C catalyst nanoparticles were used in GaN CMP to get a higher MRR. - Abstract: The relationship between the surface characterization after chemical mechanical polishing (CMP) and the size of the silica (SiO{sub 2}) abrasive used for CMP of gallium nitride (GaN) substrates was investigated in detail. Atomic force microscope was used for measuring the surface morphology, pit feature, pit depth distribution, and atomic step-terrace structure. With the decrease of SiO{sub 2} abrasive size, the pit depth reduced and the atomic step-terrace structure became more whole with smaller damage area, resulting in smaller roughness. For tiny-sized SiO{sub 2} abrasive, an almost complete atomic step-terrace structure with 0.0523 nm roughness was achieved. On the other hand, in order to acquire higher removal, Pt/C nanoparticle was employed as a catalyst in CMP slurry. The result indicates that when Pt/C catalyst content was reached to 1.0 ppm, material removal rate was increased by 47.69% compared to that by none of the catalyst, and besides, the pit depth reduced and the surface atomic step-terrace structure was not destroyed. The Pt/C nanoparticle is proved to be the promising catalyst to the surface preparation of super-hard and inert materials with high efficiency and good surface.

Structural Analysis of InxGa1−xN/GaN MQWs by Different Experimental Methods

International Nuclear Information System (INIS)

Ding Bin-Beng; Pan Feng; Fa Tao; Cheng Feng-Feng; Yao Shu-De; Feng Zhe-Chuan

2011-01-01

Structural properties of In x Ga 1−x N/GaN multi-quantum wells (MQWs) grown on sapphire by metal organic chemical vapor deposition are investigated by synchrotron radiation x-ray diffraction (SRXRD), Rutherford backscattering/channelling (RBS/C) and high-resolution transmission electron microscopy. The sample consists of eight periods of In x Ga 1−x N/GaN wells of 2.1 nm thickness and 8.5 nm thickness of GaN barrier, and the results are very close, which verifies the accuracy of the three methods. The indium content in In x Ga 1−x N/GaN MQWs by SRXRD and RBS/C is estimated, and results are in general the same. By RBS/C random spectra, the indium atomic lattice substitution rate is 94.0%, indicating that almost all indium atoms in In x Ga 1−x N/GaN MQWs are at substitution, that the indium distribution of each layer in In x Ga 1−x N/GaN MQWs is very homogeneous and that the In x Ga 1−x N/GaN MQWs have a very good crystalline quality. It is not accurate to estimate indium content in In x Ga 1−x N/GaN MQWs by photoluminescence (PL) spectra, because the result from the PL experimental method is very different from the results by the SRXRD and RBS/C experimental methods. (cross-disciplinary physics and related areas of science and technology)

Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

Science.gov (United States)

Grady, R.; Bayram, C.

2017-07-01

In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga(1-X)N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga(1-X)N/GaN heterojunction is formed through intentional δ-doping part of the Al X Ga(1-X)N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga(1-X)N barrier; δ-doping location (within the Al X Ga(1-X)N barrier), δ-doped Al X Ga(1-X)N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga(1-X)N barrier results in a normally-off behavior whereas Al X Ga(1-X)N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology.

Origins of efficient green light emission in phase-separated InGaN quantum wells

International Nuclear Information System (INIS)

Lai, Y-L; Liu, C-P; Lin, Y-H; Hsueh, T-H; Lin, R-M; Lyu, D-Y; Peng, Z-X; Lin, T-Y

2006-01-01

Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516 nm) and the InGaN matrix (450 nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511 meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341 meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission

Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhengyuan; Shen, Xiyang; Xiong, Huan; Li, Qingfei; Kang, Junyong; Fang, Zhilai [Xiamen University, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen (China); Lin, Feng; Yang, Bilan; Lin, Shilin [San' an Optoelectronics Co., Ltd, Xiamen (China); Shen, Wenzhong [Shanghai Jiao Tong University, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai (China); Zhang, Tong-Yi [Shanghai University, Shanghai University Materials Genome Institute and Shanghai Materials Genome Institute, Shanghai (China)

2016-02-15

Interface modification of high indium content InGaN/GaN quantum wells was carried out by Mg pretreatment of the GaN barrier surface. The indium in the Mg-pretreated InGaN layer was homogeneously distributed, making the interfaces abrupt. The improved interface quality greatly enhanced light emission capacity. The cathodoluminescence intensity of the Mg-pretreated InGaN/GaN quantum wells was correspondingly much stronger than those of the InGaN/GaN quantum wells without Mg pretreatment. (orig.)

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

Directory of Open Access Journals (Sweden)

Nigamananda Samal

2010-02-01

Full Text Available An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW on GaAs by molecular beam epitaxy (MBE are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM of ~60 meV in room temperature (RT photoluminescence (PL indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

Efficient photodecomposition of herbicide imazapyr over mesoporous Ga2O3-TiO2 nanocomposites.

Science.gov (United States)

Ismail, Adel A; Abdelfattah, Ibrahim; Faisal, M; Helal, Ahmed

2018-01-15

The unabated release of herbicide imazapyr into the soil and groundwater led to crop destruction and several pollution-related concerns. In this contribution, heterogeneous photocatalytic technique was employed utilizing mesoporous Ga 2 O 3 -TiO 2 nanocomposites for degrading imazapyr herbicide as a model pollutant molecule. Mesoporous Ga 2 O 3 -TiO 2 nanocomposites with varied Ga 2 O 3 contents (0-5wt%) were synthesized through sol-gel process. XRD and Raman spectra exhibited extremely crystalline anatase TiO 2 phase at low Ga 2 O 3 content which gradually reduced with the increase of Ga 2 O 3 content. TEM images display uniform TiO 2 particles (10±2nm) with mesoporous structure. The mesoporous TiO 2 exhibits large surface areas of 167m 2 g -1 , diminished to 108m 2 g -1 upon 5% Ga 2 O 3 incorporation, with tunable mesopore diameter in the range of 3-9nm. The photocatalytic efficiency of synthesized Ga 2 O 3 -TiO 2 nanocomposites was assessed by degrading imazapyr herbicide and comparing with commercial photocatalyst UV-100 and mesoporous Ga 2 O 3 under UV illumination. 0.1% Ga 2 O 3 -TiO 2 nanocomposite is considered the optimum photocatalyst, which degrades 98% of imazapyr herbicide within 180min. Also, the photodegradation rate of imazapyr using 0.1% Ga 2 O 3 -TiO 2 nanocomposite is nearly 10 and 3-fold higher than that of mesoporous Ga 2 O 3 and UV-100, respectively. The high photonic efficiency and long-term stability of the mesoporous Ga 2 O 3 -TiO 2 nanocomposites are ascribed to its stronger oxidative capability in comparison with either mesoporous TiO 2 , Ga 2 O 3 or commercial UV-100. Copyright © 2017 Elsevier B.V. All rights reserved.

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

International Nuclear Information System (INIS)

Chakraborty, Apurba; Biswas, Dhrubes

2015-01-01

Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN is to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10 12  eV −1  cm −2 in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10 10  eV −1  cm −2 and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V

Some physical properties of GaX (X=P, As and Sb) semiconductor compounds using higher-order perturbation theory

International Nuclear Information System (INIS)

Jivani, A.R.; Trivedi, H.J.; Gajjar, P.N.; Jani, A.R.

2005-01-01

Recently proposed model potential for describing the electron-ion interaction is employed to calculate total energy, energy band gap at Jones-zone face at X, equation of state and bulk modulus of GaP, GaAs and GaSb compounds using higher-order perturbation theory. The covalent correction term corresponding to third- and fourth-order perturbation energy terms are used to take account of covalent bonding effect in such semiconductors. The significant value of the covalent bonding term shows the essentiality of higher-order correction for zincblende-type crystals. We have employed five different screening functions along with the latest screening function proposed by Sarkar et al. in the present work. The numerical results for the total energy, energy band gap at Jones-zone face and bulk modulus of these compounds are in good agreement with the experimental data and found better than other such theoretical findings. The pressure and bulk modulus at different volumes are obtained by using such higher-order perturbation theory with the application of our model potential. The pressure obtained by this method is compared with pressure obtained by equations proposed by Murnarghan and Vinet et al. The present study also shows that the incorporation of different screening functions generates distinct effects

Defect Structure of High-Temperature-Grown GaMnSb/GaSb

International Nuclear Information System (INIS)

Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

2010-01-01

GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

Indium (In) Effects to The Efficiency Performance of Ga1-XInxP/GaAs Based Solar Cell Using Silvaco Software Modelling & Simulation

Science.gov (United States)

Norizan, M. N.; Zahari, S. M.; Mohamad, I. S.; Osman, R. A. M.; Shahimin, M. M.; Murad, S. A. Z.

2017-06-01

Ga1-xInxP composition has been applied to the top cell of multi-junction GaInP/GaAs based solar cell and currently have achieving a conversion efficiency of more than 46%, however its capability is unclear. We performed an analysis using Silvaco simulation method to evaluate the effect of In and the substitution was made to the Ga1-xInxP for the range of x from 0 to 1. We found that the highest efficiency recorded was 17.66% when the composition of Indium was x=1. The efficiency has been increasing about 11.71% from x=0 to x=1 In content. As the composition of In raised, the value of efficiency and short circuit current density, Jsc also become higher (13.60 mA/cm2) by having a greater photon absorption in a wider band gap energy. In addition to that, Voc, Pmax, Vmax, Imax and fill factor was measured to be 2.15 V, 2.44 mW/cm2, 2.0 V, 1.22 mA/cm2 and 83.34 respectively. In conclusion, this study confirms that the existence of In in Ga1-xInxP improves the solar cell efficiency by gaining a higher energy gap and producing more electrons for best achievement in multilayer solar cell applications.

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Directory of Open Access Journals (Sweden)

Chee-Keong Tan

2015-01-01

Full Text Available Density functional theory (DFT calculations with the local density approximation (LDA functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

Source of Gallium-67 in gastrointestinal contents: concise communication

International Nuclear Information System (INIS)

Chen, D.C.; Scheffel, U.; Camargo, E.E.; Tsan, M.F.

1980-01-01

The sources of Ga-67 in gastrointestinal (GI) contents, and factors affecting its secretion were studied in rats. To prevent loss of fecal Ga-67, the anus was sutured before intravenous injection of Ga-67 citrate. Secretion of Ga-67 into the contents of the GI tract was rapid, 3, 6, and 9% of the injected dose were secreted at 1, 6, and 24 hr after injection, respectively. In contrast, Ga-67 concentration in the GI tissues remained relatively constant throughout this period. Analysis of Ga-67 contents of various parts of the GI tract revealed that small intestine is its major source, contributing 60% while the bile contributes 20%, large intestine 10%, esophagus and stomach 10%. Feeding had no effect on the Ga-67 secretion into GI contents. In contrast, the serum unbound iron-binding capacity (UIBC) played an important role in the GI secretion of Ga-67; reducing the serum UIBC reduced the Ga-67 secretion into GI contents

AlGaInP quantum dots for optoelectronic applications in the visible spectral range; AlGaInP-Quantenpunkte fuer optoelektronische Anwendungen im sichtbaren Spektralbereich

Energy Technology Data Exchange (ETDEWEB)

Gerhard, Sven

2013-01-10

The scope of this work is the fabrication and characterization of AlGaInP quantum dots on GaP an GaAs substrates. Based on such quantum dots, semiconductor lasers have been realized, emitting between 660 nm and 730 nm at room temperature. The examination of broad-area lasers processed on these structures suggests that active layers of larger quantum dots with higher aluminium contents lead to lasers with better performance at similar emission wavelength. Additionally, quantum dots grown on GaP substrates have been characterized, that were embedded in AlGaP barriers. Since these barriers exhibit an indirect bandgap, a non-trivial band alignment within these structures is expected. In this work, numerical 3D-simulations are employed to calculate the band alignment including strain and internal fields. Also, ground state wavefunctions of charge carriers have been determined. A thorough comparison between theory and experiment connects the measured emission wavelength and luminescence intensities with calculated transition energies and wavefunction overlaps.

Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

International Nuclear Information System (INIS)

Grady, R; Bayram, C

2017-01-01

In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga (1−X) N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga (1−X) N/GaN heterojunction is formed through intentional δ -doping part of the Al X Ga (1−X) N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga (1−X) N barrier; δ -doping location (within the Al X Ga (1−X) N barrier), δ-doped Al X Ga (1−X) N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga (1−X) N barrier results in a normally-off behavior whereas Al X Ga (1−X) N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology. (paper)

Expansion of the capabilities of the GA-4 legal weight truck spent fuel shipping cask

International Nuclear Information System (INIS)

Zimmer, A.; Razvi, J.; Johnson, L.; Welch, B.; Lancaster, D.

2004-01-01

General Atomics (GA) has developed the Model GA-4 Legal Weight Truck Spent Fuel Cask, a high capacity cask for the transport of four PWR spent fuel assemblies, and obtained a Certificate of Compliance (CoC No. 9226) in 1998 from the US Nuclear Regulatory Commission (NRC). The currently authorized contents in this CoC however, are much more limiting than the actual capability of the GA-4 cask to transport spent PWR fuel assemblies. The purpose of this paper is to show how the authorized contents can be significantly expanded by additional analyses without any changes to the physical design of the package. Using burnup credit per ISG-8 Rev. 2, the authorized contents can be significantly expanded by increasing the maximum enrichment as the burnup increases. Use of burnup credit eliminates much of the criticality imposed limits on authorized package contents, but shielding still limits the use of the cask for the higher burnup, short cooled fuel. By downloading to two assemblies and using shielding inserts, even the high burnup fuel with reasonable cooling times can be transported

Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

Energy Technology Data Exchange (ETDEWEB)

Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

2015-02-15

Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

Thermodynamics of the (Sm{sub 2}Fe{sub 17-x}Ga{sub x}+H{sub 2}) system

Energy Technology Data Exchange (ETDEWEB)

Kubis, M.; Handstein, A.; Gebel, B.; Gutfleisch, O.; Mueller, K.H.; Schultz, L. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe

2000-08-10

Sm{sub 2}Fe{sub 17-x}Ga{sub x} samples (with x=0, 0.5, 1, and 2) were disproportionated into SmH{sub 2} and {alpha}-(Fe,Ga) by heating the samples in 4 MPa hydrogen up to 650 C. It was possible to disproportionate even the more stable compounds with a higher Ga content under these conditions. The recombination into the original 2:17 phase was carried out by annealing in low hydrogen pressures of 2.5, 12 and 60 kPa. The values of the hydride formation enthalpy, {delta}H, and of the change of entropy, {delta}S, for the Sm{sub 2}Fe{sub 17-x}Ga{sub x} compounds were obtained by using the Van't Hoff relation. It was found that the negative {delta}H increases monotonically from 141 to 229 kJ/mol H{sub 2} and the negative {delta}S increases monotonically from 112 to 258 J/Kmol H{sub 2} for x=0 to x=2, respectively. These results show that the higher stability for the compounds with increasing Ga content is mainly attributed to the increasing negative change of entropy -{delta}S and not, as expected before, to a decrease of -{delta}H. (orig.)

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Directory of Open Access Journals (Sweden)

James (Zi-Jian Ju

2016-04-01

Full Text Available The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga < 0.2 yields a more than 10-fold reduction in thermal conductivity (κ without deteriorating electrical conductivity (σ, while the Seebeck coefficient (S increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga = 0.1 with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K, and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.

Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

2007-01-01

Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

Science.gov (United States)

Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan; Bresnahan, Rich C.

2015-10-01

Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 1016 to 3.8 × 1019 cm-3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1-2 × 1015 cm-3. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the dramatically enhanced growth rates demonstrate

Lattice vibrations study of Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} quaternary alloys with low (In, As) content grown by liquid phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Olvera-Herandez, J [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Olvera-Cervantes, J [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Rojas-Lopez, M [Centro de Investigacion en BiotecnologIa Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72160 (Mexico); Navarro-Contreras, H [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico); Vidal, M A [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico); Anda, F de [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico)

2006-01-01

Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} alloys with low (In, As) contents (0.03 GaSb substrates at 540{sup 0}C. High Resolution X-Ray Diffraction results showed profiles associated with a quaternary layer lattice matched to the GaSb substrate as obtained from the (004) reflection. The experimental diffractograms were simulated to estimate alloy composition, thickness and lattice mismatch of the layer. Raman scattering results show phonon frequencies associated to the TO and LO GaAs-like modes as well as GaSb + InAs-like mode, which are characteristic of this quaternary alloy. The As content dependence of the phonon frequency measured in this alloy for low (In, As) contents agree well with the modified Random-Element Isodisplacement (REI) model and also with other available experimental reports. This method can also be used to estimate alloy compositions for this kind of quaternary alloys.

Effect of thermal oxidation treatment on pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Wang, Lei; Bu, Yuyu [Institute of Science and Technology, Tokushima University, Tokushima 770-8506 (Japan); Li, Liuan, E-mail: liliuan@mail.sysu.edu.cn [School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275 (China); Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Science and Technology, Tokushima University, Tokushima 770-8506 (Japan)

2017-07-31

Highlights: • AlGaN/GaN ISFETs were fabricated and evaluated with thermal oxidation treatment. • Sensitivity was improved to 57.7 mV/pH after 700 °C treatment. • Sensitivity became poor after 800 °C treatment. • The pure α-Al{sub 2}O{sub 3} crystal phase generated on the surface of the 700 °C treatment sample. • Ga{sub 2}O{sub 3} phase content in the metal oxide layer increased after 800 °C treatment. - Abstract: In this article, AlGaN/GaN heterostructure ion-sensitive field-effect transistors (ISFETs) were prepared and evaluated by thermal oxidation treatment on the AlGaN surface. The ISFETs were fabricated on the AlGaN/GaN heterostructure and then thermally oxidized with dry oxygen in 600, 700, and 800 °C, respectively. It indicates that the performance of the AlGaN/GaN heterostructure ISFETs, such as noise and sensitivity, has been improved owing to the thermal oxidation treatment process at different temperatures. The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results indicate that after thermal oxidation treatment at different temperatures, hydroxide who possesses high surface state density will transfer to oxide owing to the higher chemical stability of the latter. Moreover, a crystalline α-Al{sub 2}O{sub 3} phase generated at 700 °C can not only provide a relatively smooth surface, but also improve the sensitivity to 57.7 mV/pH for the AlGaN/GaN heterostructure ISFETs, which is very close to the Nernstian limit.

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

Science.gov (United States)

Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

2017-08-17

Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Science.gov (United States)

Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

2018-05-01

The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

International Nuclear Information System (INIS)

Hammersley, Simon; Dawson, Phil; Kappers, Menno J.; Massabuau, Fabien C.P.; Sahonta, Suman-Lata; Oliver, Rachel A.; Humphreys, Colin J.

2016-01-01

In this paper we report on the impact that the quantum well growth temperature has on the internal quantum efficiency and carrier recombination dynamics of two sets of InGaN/GaN multiple quantum well samples, designed to emit at 460 and 530 nm, in which the indium content of the quantum wells within each sample set was maintained. Measurements of the internal quantum efficiency of each sample set showed a systematic variation, with quantum wells grown at a higher temperature exhibiting higher internal quantum efficiency and this variation was preserved at all excitation power densities. By investigating the carrier dynamics at both 10 K and 300 K we were able to attribute this change in internal quantum efficiency to a decrease in the non-radiative recombination rate as the QW growth temperature was increased which we attribute to a decrease in incorporation of the point defects. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fruit development, pigmentation and biochemical properties of wax apple as affected by localized Application of GA3 under field conditions

Directory of Open Access Journals (Sweden)

Mohammad Moneruzzaman Khandaker

2013-02-01

Full Text Available This study investigated the effects of gibberellin (GA3 on the fruit development, pigmentation and biochemical properties of wax apple. The wax apple trees were rubbing treated with 0, 20, 50 and 100 mgGA3/l under field conditions. The localized application (rubbing of 50 mg GA3/l significantly increased the fruit set, fruit length and diameter, color development, weight and yieldcompared to the control. In addition, GA3 treatments significantly reduced the fruit drop. With regard to the fruit quality, 50 mg/l GA3 treatment increased the juice content, K+, TSS, total sugar and sugar acid ratio of wax apple fruits. In addition, higher vitamin C, phenol, flavonoid, anthocyanin, carotene content, PAL and antioxidant activities were recorded in the treated fruits. There was a positive correlation between the peel colour and TSS content and between the PAL activity and anthocyanin formation in the GA3-treated fruit. It was concluded that rubbing with 50 mg/L GA3 at inflorescence developing point of phloem once a week from the tiny inflorescence bud until the flower opening resulted in better yield and quality of wax apple fruits and could be an effective technique to safe the environment from excessive spray.

High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

International Nuclear Information System (INIS)

Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

2015-01-01

A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm 2 /(V·s) at sheet charge density of 8.4 × 10 12  cm −2 . Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices

Metallurgical processing and properties of multifilamentary V3Ga composite wires

International Nuclear Information System (INIS)

Howe, D.G.; Weinman, L.S.

1976-01-01

Multifilamentary composite wires of V - 6.1 at. percent Ga filaments in a Cu-17.5 at. percent Ga matrix were fabricated. High purity V and Ga were arc melted and cast to form an alloy rod. High purity Cu and Ga were induction melted and also cast as an alloy rod. The alloy rods were reduced in diameter by swaging. The larger diameter Cu - Ga matrix rod was drilled with 19 holes which terminated within the matrix-rod. The holes served as receptacles for 19 V-Ga rods which were inserted into the matrix. The composite assembly was evacuated under high vacuum and sealed by an electron beam weld. The composite was then reduced in diameter through swaging and wire drawing to 0.032-in. dia wire. V 3 Ga layers at the filament/matrix interface were formed through an isothermal solid-state reaction. Growth rates for V 3 Ga are strongly influenced by alloy composition and formation temperature, with more rapid growth occurring in composite wires with higher Ga contents. Improved critical current densities (J/sub c/) resulted from lower formation temperatures, J/sub c/ values of over 1 x 10 6 A/cm 2 in a transverse magnetic field of 100 kG were obtained in the multifilamentary composite wire. 9 figs

Elder Abuse and Neglect Content in Higher Education Programs on Aging.

Science.gov (United States)

Stein, Karen F.

This study sought to: (1) investigate the degree to which course content on elder abuse and neglect is a part of higher education curriculums in aging; (2) determine which specific elder abuse and neglect course content is included in required and elective coursework; and (3) describe the attitudes of instructors toward including elder abuse and…

High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing

International Nuclear Information System (INIS)

Wang Dongfang; Wei Ke; Yuan Tingting; Liu Xinyu

2010-01-01

This paper describes the performance of AlGaN/GaN HEMTs with 2.4 μm source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 μm source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

International Nuclear Information System (INIS)

Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

2014-01-01

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Resonant photoemission at the Ga 3p photothreshold in In xGa1-xN

International Nuclear Information System (INIS)

Colakerol, L.; Glans, P.-A.; Plucinski, L.; Zhang, Y.; Smith, K.E.; Zakharov, A.A.; Nyholm, R.; Cabalu, J.; Moustakas, T.D.

2006-01-01

Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film In x Ga 1-x N alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d 8 state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of In x Ga 1-x N thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases

Numerical analysis of In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS heterojunction solar cells

International Nuclear Information System (INIS)

Lin, Shuo; Li, Xirong; Pan, Huaqing; Chen, Huanting; Li, Xiuyan; Li, Yan; Zhou, Jinrong

2016-01-01

Highlights: • In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS solar cells are studied by numerical analysis. • Performances of In_xGa_1_−_xN/SnS solar cells enhanced with decreasing In content. • The electron barrier leads to the degraded efficiency of Al_xGa_1_−_xN/SnS solar cells. • GaN/SnS solar cell exhibits the highest efficiency 26.34%. - Abstract: In this work the photovoltaic properties of In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS heterojunction solar cells are studied by numerical analysis. The photovoltaic performances of In_xGa_1_−_xN/SnS solar cells are enhanced with the decreasing In content and the GaN/SnS solar cell exhibits the highest efficiency. The efficiencies of GaN/SnS solar cell improve with the increased SnS thickness and the reduced GaN thickness. For the Al_xGa_1_−_xN/SnS solar cells, there is electron barrier in the Al_xGa_1_−_xN/SnS interface. The electron barrier becomes larger with increasing Al content and lead to the degraded efficiency of Al_xGa_1_−_xN/SnS solar cells. The simulation contributes to designing and fabricating SnS solar cells.

Performance analysis of high efficiency InxGa1-xN/GaN intermediate band quantum dot solar cells

Science.gov (United States)

Chowdhury, Injamam Ul Islam; Sarker, Jith; Shifat, A. S. M. Zadid; Shuvro, Rezoan A.; Mitul, Abu Farzan

2018-06-01

In this subsistent fifth generation era, InxGa1-xN/GaN based materials have played an imperious role and become promising contestant in the modernistic fabrication technology because of some of their noteworthy attributes. On our way of illustrating the performance, the structure of InxGa1-xN/GaN quantum dot (QD) intermediate band solar cell (IBSC) is investigated by solving the Schrödinger equation in light of the Kronig-Penney model. In comparison with p-n homojunction and heterojunction solar cells, InxGa1-xN/GaN IBQD solar cell manifests larger power conversion efficiency (PCE). PCE strongly depends on position and width of the intermediate bands (IB). Position of IBs can be controlled by tuning the size of QDs and the Indium content of InxGa1-xN whereas, width of IB can be controlled by tuning the interdot distance. PCE can also be controlled by tuning the position of fermi energy bands as well as changing the doping concentration. In this work, maximum conversion efficiency is found approximately 63.2% for a certain QD size, interdot distance, Indium content and doping concentration.

Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

Energy Technology Data Exchange (ETDEWEB)

Robert, C., E-mail: cedric.robert@insa.rennes.fr [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Thanh, T. Nguyen; Létoublon, A.; Perrin, M.; Cornet, C.; Levallois, C.; Jancu, J.M.; Even, J. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France); Balocchi, A.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse (France); Durand, O.; Le Corre, A. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France)

2013-08-31

AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments. - Highlights: ► An active zone is proposed for a pseudomorphic laser structure on Si. ► Cladding layers are proposed for a pseudomorphic laser structure on Si. ► The AlGaP alloy is studied by X-ray diffraction and spectroscopic ellipsometry. ► InGaAs/GaP quantum dots are studied by scanning tunnelling microscopy. ► InGaAs/GaP quantum dots are studied by time-resolved photoluminescence.

Growth of self-assembled (Ga)InAs/GaAs quantum dots and realization of high quality microcavities for experiments in the field of strong exciton photon coupling; Selbstorganisiertes Wachstum von (Ga)InAs/GaAs-Quantenpunkten und Entwicklung von Mikroresonatoren hoechster Guete fuer Experimente zur starken Exziton-Photon-Kopplung

Energy Technology Data Exchange (ETDEWEB)

Loeffler, Andreas

2008-11-05

At the beginning, we improved the three dimensional optical confinement of the micropillars. The quality factor of the pillars could be increased by the use of higher reflectivity mirrors and a matched V/III ratio for the different epitaxial layers. Hence, a record quality factor of about 90000 was achieved for an active micropillar with 26 (30) mirror pairs in the top (bottom) DBR and a diameter of 4 {mu}m. In parallel to this, we made studies on the growth of self-assembled GaInAs quantum dots on GaAs substrates. Here, the nucleation of three dimensional islands as well as their optical properties were object of the investigation. The morphological properties of the dots were analyzed by transmission and scanning electron microscopy, and the optical properties were investigated by photoluminescence and photoreflectance measurements. The optical and particularly the morphological properties of the self-assembled GaInAs quantum dots were essentially improved. Due to a low strain nucleation layer with an indium content of 30 %, the dot density could be reduced to 6-9 x 10{sup 9} cm{sup -2} and their geometric dimensions were increased to typical lengths between 50 and 100 nm and widths of about 30 nm. The lattice mismatch between the quantum dots and the surrounding matrix is decreased due to the reduced indium content. The minimized strain during the dot growth leads to an enhanced migration length of the deposited atoms on the surface. Finally, the obtained findings of the MBE growth of microcavities, their fabrication and the self-assembled island growth of GaInAs on GaAs were used for the realization of further samples. Low strain GaInAs quantum dots were embedded into the microresonators. These structures allowed for the first time the observation of strong coupling between light and matter in a semiconductor. In case of the low strain quantum dots with enlarged dimensions in the strong coupling regime, a vacuum Rabi-splitting of about 140 {mu}eV between the

Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer

Directory of Open Access Journals (Sweden)

T. F. Gundogdu

2014-01-01

Full Text Available We studied a high indium content (0.8 InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer.

Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

Energy Technology Data Exchange (ETDEWEB)

Tsutsui, Kazuhiro; Matsubayashi, Daisuke; Ishihara, Noritaka; Takasu, Takako; Matsuda, Shinpei; Yamazaki, Shunpei [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi-shi 243-0036, Kanagawa (Japan)

2015-12-28

The electron mobility of In-Ga-Zn-oxide (IGZO) is known to be enhanced by higher In content. We theoretically investigated the mobility-enhancement mechanism by proposing an In-Ga-Zn-disorder scattering model for an In-rich crystalline IGZO (In{sub 1+x}Ga{sub 1−x}O{sub 3}(ZnO){sub m} (0 < x < 1, m > 0)) thin film. The obtained theoretical mobility was found to be in agreement with experimental Hall mobility for a crystalline In{sub 1.5}Ga{sub 0.5}O{sub 3}(ZnO) (or In{sub 3}GaZn{sub 2}O{sub 8}) thin film. The mechanism specific to In-rich crystalline IGZO thin films is based on three types of Coulomb scattering potentials that originate from effective valence differences. In this study, the In-Ga-Zn-disorder scattering model indicates that the effective valence of the In{sup 3+} ions in In-rich crystalline IGZO thin films significantly affects their electron mobility.

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)

2012-01-15

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

International Nuclear Information System (INIS)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva

2012-01-01

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Investigation of GaN LED with Be-implanted Mg-doped GaN layer

International Nuclear Information System (INIS)

Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

2004-01-01

We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVD

International Nuclear Information System (INIS)

Lu, D.; Florescu, D.I.; Lee, D.S.; Ramer, J.C.; Parekh, A.; Merai, V.; Li, S.; Begarney, M.J.; Armour, E.A.; Gardner, J.J.

2005-01-01

Nonuniform indium distribution within InGaN/GaN single quantum well (SQW) structures with nanoscale islands grown by metalorganic chemical vapor deposition (MOCVD) have been characterized by advanced characterization techniques. Robinson backscattered electron (BSE) measurements show cluster-like BSE contrast of high brightness regions, which are not centered at small dark pits in a SQW structure of spiral growth mode. By comparing with the secondary electron (SE) images, the bright cluster areas from the BSE images were found to have higher indium content compared to the surrounding dark areas. Temperature dependant photoluminescence (PL) measurement shows typical ''S-shape'' curve, which shows good correlation with nonuniform indium distribution from BSE measurement. Optical evaluation of the samples show increased PL slope efficiency of the spiral mode SQW, which can be attributed to the presence of Indium inhomogeneities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comparison of 68Ga-OPS202 (68Ga-NODAGA-JR11) and 68Ga-DOTATOC (68Ga-Edotreotide) PET/CT in Patients with Gastroenteropancreatic Neuroendocrine Tumors: Evaluation of Sensitivity in a Prospective Phase II Imaging Study.

Science.gov (United States)

Nicolas, Guillaume P; Schreiter, Nils; Kaul, Felix; Uiters, John; Bouterfa, Hakim; Kaufmann, Jens; Erlanger, Tobias E; Cathomas, Richard; Christ, Emanuel; Fani, Melpomeni; Wild, Damian

2017-11-30

Radiolabeled somatostatin receptor (sst) agonists are integral to the diagnosis of gastroenteropancreatic neuroendocrine tumors (GEP-NETs), but detection rates, especially of liver metastases, remain disappointing even with PET/CT. 68 Ga-OPS202 ( 68 Ga-NODAGA-JR11), a novel radiolabeled sst antagonist with a high affinity for sst 2 , has the potential to perform better than sst agonists. Here we present the results of the Phase II component of a Phase I/II study, which evaluated the sensitivity of 68 Ga-OPS202 PET/CT compared with the reference compound, 68 Ga-DOTATOC (sst agonist). Methods: Patients received a single intravenous administration of 68 Ga-DOTATOC (15 µg peptide) and 68 Ga-OPS202 (15 µg peptide at visit 1; 50 µg peptide at visit 2) with an activity of 150 MBq. Whole-body PET/CT acquisitions were performed 1 h post injection on the same calibrated PET/CT scanner. Diagnostic efficacy measures were compared against contrast medium-enhanced CT or MRI as gold standard. Two independent blinded experts read the scans and both outcomes were combined for analysis. Results: Twelve consecutive patients with G1 or G2 GEP-NETs took part in this prospective study. Image contrast for matched malignant liver lesions was significantly higher for 68 Ga-OPS202 scans than for the 68 Ga-DOTATOC scan: median of the mean [interquartile] tumor-to-normal-liver SUV max ratios for 15 µg and 50 µg 68 Ga-OPS202 (5.3 [2.9 - 5.7] and 4.3 [3.4 - 6.3], respectively) were significantly higher than for 68 Ga-DOTATOC (1.9 [1.4 - 2.9]; P = 0.004 and P = 0.008, respectively). The higher tumor-to-background ratio of 68 Ga-OPS202 resulted not only in a higher detection rate of liver metastases, but also in a significantly higher lesion-based overall sensitivity with the antagonist than with 68 Ga-DOTATOC PET/CT: 94% and 88% for 50 µg and 15 µg 68 Ga-OPS202 and 59% for 15 µg 68 Ga-DOTATOC, respectively (pPET/CT and 68 Ga DOTATOC PET/CT were similar (approximately 98%). There were no

Strain-dependent magnetic anisotropy in GaMnAs on InGaAs templates

Energy Technology Data Exchange (ETDEWEB)

Daeubler, Joachim; Glunk, Michael; Schwaiger, Stephan; Dreher, Lukas; Schoch, Wladimir; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

2008-07-01

We have systematically studied the influence of strain on the magnetic anisotropy of GaMnAs by means of HRXRD reciprocal space mapping and angle-dependent magnetotransport. For this purpose, a series of GaMnAs layers with Mn contents of {proportional_to}5% was grown by low-temperature MBE on relaxed InGaAs/GaAs templates with different In concentrations, enabling us to vary the strain in the GaMnAs layers continuously from tensile to compressive, including the unstrained state. Considering both, as-grown and annealed samples, the anisotropy parameter describing the uniaxial out-of-plane magnetic anisotropy has been found to vary linearly with hole density and strain. As a consequence, the out-of-plane direction gradually undergoes a transition from a magnetic hard axis to a magnetic easy axis from compressive to tensile strain.

Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

Science.gov (United States)

Netzel, C.; Knauer, A.; Weyers, M.

2012-12-01

We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ = 320-350 nm) by temperature dependent photoluminescence. Low indium content in AlInGaN structures causes a significant intensity increase by change of the polarization of the emitted light. Polarization changes from E ⊥ c to E ‖ c with increasing aluminum content. It switches back to E ⊥ c with the incorporation of indium. The polarization degree decreases with temperature. This temperature dependence can corrupt internal quantum efficiency determination by temperature dependent photoluminescence.

Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar (10\\bar{1}1) core-shell triangular nanostripe GaN/InGaN LEDs

Science.gov (United States)

Okur, Serdal; Rishinaramangalam, Ashwin K.; Mishkat-Ul-Masabih, Saadat; Nami, Mohsen; Liu, Sheng; Brener, Igal; Brueck, Steven R. J.; Feezell, Daniel F.

2018-06-01

We investigate the spectrally resolved internal quantum efficiency (IQE) and carrier dynamics in semipolar (10\\bar{1}1) core–shell triangular nanostripe light-emitting diodes (TLEDs) using temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) at various excitation energy densities. Using electroluminescence, photoluminescence, and cathodoluminescence measurements, we verify the origins of the broad emission spectra from the nanostructures and confirm that localized regions of high-indium-content InGaN exist along the apex of the nanostructures. Spectrally resolved IQE measurements are then performed, with the spectra integrated from 400–450 nm and 450–500 nm to obtain the IQE of the QWs mainly near the sidewalls and apex of the TLEDs, respectively. TDPL and TRPL are used to decouple the radiative and non-radiative carrier lifetimes for different regions of the emission spectra. We observe that the IQE is higher for the spectral region between 450 nm and 500 nm compared to the IQE between 400 and 450 nm. This result is in contrast to the typical observation that the IQE of planar GaN-based LEDs is lower for longer wavelengths (i.e., higher indium contents). We also observe a longer non-radiative recombination lifetime for the longer wavelength portion of the spectrum. Several explanations are proposed for the improved IQE and longer non-radiative lifetime observed near the apex of the nanostructures. The results show that nanostructures may be leveraged to design more efficient green LEDs, potentially addressing a long-standing challenge in GaN-based materials.

Growth initiation processes for GaAs and AlGaAs in CBE

International Nuclear Information System (INIS)

Hill, D.

2002-01-01

The aim of this work was to investigate the nature of the transient period found in reflectance anisotropy (RA) measurements of high III:V BEP ratio growth of gallium arsenide (GaAs) and aluminium gallium arsenide (AIGaAs) by chemical beam epitaxy (CBE). Growth at substrate temperatures between 510-610 deg C with arsine (AsH 3 ) thermally cracked to As 2 , triethylgallium (TEGa), trimethylgallium (TMGa), trimethylaminealane (TMAA) and diethylmethylaminealane (DEMAA) at high III:V BEP ratios reveals that the transition from 'pre-growth' to 'in-growth' reconstructions is not as straightforward as that for lower III:V BEP ratio growth. Instead of the reconstruction changing directly to the usual 2x4 'in-growth' reconstruction over 1-2 seconds it passes through several other transient reconstructions over a period of up to and greater than 60s, firstly the Ga rich 4x2 then several other 2x4 As-stable reconstructions. It has been shown that at the III:V BEP ratios and substrate temperatures used in this work growth is taking place in a transitional area of the phase diagram for 'in-growth' reconstructions. At higher III:V BEP ratio growth the transition is believed to be direct, from the 'pre-growth' reconstruction to a 4x2 Ga-rich 'in-growth' reconstruction. The surfaces grown with any of the precursors are initially saturated with Ga and then as the As coverage gradually increases the reconstructions change until enough As is present on the surface for usual 2x4 'in-growth' reconstruction to stabilise. However unlike for TMGa, GaAs growth with TEGa proceeds by a non-self limiting growth mode and TEGa rapidly dissociates. The result of this is that TEGa decomposes on top of other TEGa molecules, or their fragments and due to the high flux rate this leads to a 'stacking-up' of Ga on the surface. The presence of excess Ga provides a rapid increase of surface reflectance and then its subsequent decay as the excess Ga is incorporated by the increasing As content of the

GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

International Nuclear Information System (INIS)

Klem, J. F.; Blum, O.; Kurtz, S. R.; Fritz, I. J.; Choquette, K. D.

2000-01-01

We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum-well structures grown by molecular-beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 μm. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb versus GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in nonideal interfaces under certain growth conditions. At low-injection currents, double-heterostructure lasers with GaAsSb/InGaAs bilayer quantum-well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities of 120 A/cm2 at 1.17 μm, and 2.1 kA/cm2 at 1.21 μm. (c) 2000 American Vacuum Society

Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by metal-organic vapor phase epitaxy.

Science.gov (United States)

Klangtakai, Pawinee; Sanorpim, Sakuntam; Onabe, Kentaro

2011-12-01

Strained GaAsN T-junction quantum wires (T-QWRs) with different N contents grown on GaAs by two steps metal-organic vapor phase epitaxy in [001] and [110] directions, namely QW1 and QW2 respectively, have been investigated by photoreflectance (PR) spectroscopy. Two GaAsN T-QWRs with different N contents were formed by T-intersection of (i) a 6.4-nm-thick GaAs0.89N0.011 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2 and (ii) a 5.0-nm-thick GaAs0.985N0.015 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2. An evidence of a one-dimensional structure at T-intersection of the two QWs on the (001) and (110) surfaces was established by PR resonances associated with extended states in all the QW and T-QWR samples. It is found that larger lateral confinement energy than 100 meV in both of [001] and [110] directions were achieved for GaAsN T-QWRs. With increasing temperature, the transition energy of GaAsN T-QWRs decreases with a faster shrinking rate compared to that of bulk GaAs. Optical quality of GaAsN T-QWRs is found to be affected by the N-induced band edge fluctuation, which is the unique characteristic of dilute III-V-nitrides.

Noise performance in AlGaN/GaN HEMTs under high drain bias

International Nuclear Information System (INIS)

Pang Lei; Pu Yan; Lin Xinyu; Wang Liang; Liu Jian

2009-01-01

The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias. (semiconductor devices)

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Bresnahan, Rich C. [Veeco Instruments, St. Paul, Minnesota 55127 (United States)

2015-10-21

Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10{sup 16} to 3.8 × 10{sup 19} cm{sup −3} were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10{sup 15} cm{sup −3}. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan; Bresnahan, Rich C.

2015-01-01

Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N 2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N 2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10 16 to 3.8 × 10 19 cm −3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10 15 cm −3 . The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the

Resonant Raman characterization of InAlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Cros, A.; Cantarero, A.; Pelekanos, N.T.; Georgakilas, A.; Pomeroy, J.; Kuball, M.

2006-01-01

InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In x Al y Ga 1-x-y N. It is shown that the addition of In to the Al y Ga 1-y N alloy diminishes considerably the vibration energy of the A 1 (LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In x Al y Ga 1-x-y N layer. The nature of this shift is discussed in relation with intrinsic and extrinsic inhomogeneities in the quaternary alloy. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Resonant Raman characterization of InAlGaN/GaN heterostructures

Energy Technology Data Exchange (ETDEWEB)

Cros, A.; Cantarero, A. [Institut de Ciencia dels Materials, Universitat de Valencia, 46071 Valencia (Spain); Pelekanos, N.T.; Georgakilas, A. [Microelectronics Research Group, FORTH/IESL and University of Crete, P.O. Box 1527, 71110 Heraklion, Crete (Greece); Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

2006-06-15

InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In{sub x}Al{sub y}Ga{sub 1-x-y}N. It is shown that the addition of In to the Al{sub y}Ga{sub 1-y}N alloy diminishes considerably the vibration energy of the A{sub 1}(LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In{sub x}Al{sub y}Ga{sub 1-x-y}N layer. The nature of this shift is discussed in relation with intrinsic and extrinsic inhomogeneities in the quaternary alloy. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Atomic Charges and Chemical Bonding in Y-Ga Compounds

Directory of Open Access Journals (Sweden)

Yuri Grin

2018-02-01

Full Text Available A negative deviation from Vegard rule for the average atomic volume versus yttrium content was found from experimental crystallographic information about the binary compounds of yttrium with gallium. Analysis of the electron density (DFT calculations employing the quantum theory of atoms in molecules revealed an increase in the atomic volumes of both Y and Ga with the increase in yttrium content. The non-linear increase is caused by the strengthening of covalent Y-Ga interactions with stronger participation of genuine penultimate shell electrons (4d electrons of yttrium in the valence region. Summing the calculated individual atomic volumes for a unit cell allows understanding of the experimental trend. With increasing yttrium content, the polarity of the Y-Ga bonding and, thus its ionicity, rises. The covalency of the atomic interactions in Y-Ga compounds is consistent with their delocalization from two-center to multi-center ones.

Semipolar MOVPE AlGaN on (10 anti 10) m-plane sapphire; MOVPE von semipolarem AlGaN auf (10 anti 10) m-plane Saphir

Energy Technology Data Exchange (ETDEWEB)

Mehnke, Frank; Stellmach, Joachim; Frentrup, Martin; Kusch, Gunnar; Wernicke, Tim; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany)

2011-07-01

The energy gap of AlGaN varies between 3.4 eV and 6.2 eV and allows light emitting diodes (LED) in the ultraviolet spectral region. The authors studied semipolar (11 anti 22) AlGaN layers that were deposited on (10 anti 10) m-plane sapphire using MOVPE (metalorganic vapor phase epitaxy) without nucleation layer with a substrate temperature below 1100 C in H2 atmosphere. The layers are preferably (11 anti 22) oriented. The sample show a surface roughness between 15 and 2 nm. The Al content of the smoothest samples is about 60% determined by transmission experiments. Below 60% Al content a triangular morphology was observed, the opening angle increased with decreasing Al content. The absorption edge was 0.05 eV (GaN) to 0.35 eV (AlN) below the band edge of (0001) oriented AlGaN layers. Further investigations of semipolar AlGaN layers to study the applicability for UV LEDs are under preparation.

Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

International Nuclear Information System (INIS)

Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

2012-01-01

We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

Induction of mutants with higher protein content in soy bean

International Nuclear Information System (INIS)

Hiraiwa, S.; Tanaka, S.; Nakamura, S.

1976-01-01

Two experiments were carried out to examine the effects of ionizing radiation on protein content of soy beans and to estimate the potential value of ionizing radiation in soy bean breeding. In the first experiment seeds of three cultivars were acutely irradiated by gamma ray doses of 8 krad and 16 krad. Seeds of M 3 plants were analysed for protein content by the Biuret method. Selection within each variety was made to isolate plants having about 2% higher protein content than the control populations. In the second experiment growing plants of a soy bean cultivar were irradiated with 2.9 krad and 6.1 krad, from germination to maturation, in a 60 Co gamma field. Seeds on individual lines in M 5 , M 6 and M 7 plants were determined for their protein contents by the Kjeldahl method and the upper 10% of the treated lines were selected for progeny testing. From the results of the analysis of variance for each trait, significant differences were observed between the control variety and selected lines for all the traits. Six out of 19 lines showed significant increases in both 100 seed weight and protein content, and four lines promising. The mean protein content of selected lines increased 0.68% compared with the control variety. Genetic gain expected from selection for high protein content was therefore considered at about 1%; however, the likelihood of a large increase in protein content would greatly increase if large populations derived from irradiated seeds were observed

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

Science.gov (United States)

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Characterization of self-organized InGaN/GaN quantum dots by Diffraction Anomalous Fine Structure (DAFS)

International Nuclear Information System (INIS)

Piskorska, E.; Holy, V.; Siebert, M.; Schmidt, Th.; Falta, J.; Yamaguchi, T.; Hommel, D.; Renevier, H.

2006-01-01

The local chemical composition of InGaN quantum dots grown by a MBE method on GaN virtual substrates was investigated by x-ray diffraction anomalous fine-structure method. From the detailed numerical analysis of the data we were able to reconstruct the local neighborhood of Ga atoms at different positions in the dots. Using this approach, we found that the In content increases from 20% at the dot base to 40-50% at the top. (author) [pl

Wide bandgap engineering of (AlGa)2O3 films

International Nuclear Information System (INIS)

Zhang, Fabi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Arita, Makoto

2014-01-01

Bandgap tunable (AlGa) 2 O 3 films were deposited on sapphire substrates by pulsed laser deposition (PLD). The deposited films are of high transmittance as measured by spectrophotometer. The Al content in films is almost the same as that in targets. The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy is proved to be valid for determining the bandgap of (AlGa) 2 O 3 films as it is in good agreement with the bandgap values from transmittance spectra. The measured bandgap of (AlGa) 2 O 3 films increases continuously with the Al content covering the whole Al content range from about 5 to 7 eV, indicating PLD is a promising growth technology for growing bandgap tunable (AlGa) 2 O 3 films.

Overexpression of Arabidopsis thaliana gibberellic acid 20 oxidase (AtGA20ox) gene enhance the vegetative growth and fiber quality in kenaf (Hibiscus cannabinus L.) plants

Science.gov (United States)

Withanage, Samanthi Priyanka; Hossain, Md Aktar; Kumar M., Sures; Roslan, Hairul Azman B; Abdullah, Mohammad Puad; Napis, Suhaimi B.; Shukor, Nor Aini Ab.

2015-01-01

Kenaf (Hibiscus cannabinus L.; Family: Malvaceae), is multipurpose crop, one of the potential alternatives of natural fiber for biocomposite materials. Longer fiber and higher cellulose contents are required for good quality biocomposite materials. However, average length of kenaf fiber (2.6 mm in bast and 1.28 mm in whole plant) is below the critical length (4 mm) for biocomposite production. Present study describes whether fiber length and cellulose content of kenaf plants could be enhanced by increasing GA biosynthesis in plants by overexpressing Arabidopsis thaliana Gibberellic Acid 20 oxidase (AtGA20ox) gene. AtGA20ox gene with intron was overexpressed in kenaf plants under the control of double CaMV 35S promoter, followed by in planta transformation into V36 and G4 varieties of kenaf. The lines with higher levels of bioactive GA (0.3–1.52 ng g−1 fresh weight) were further characterized for their morphological and biochemical traits including vegetative and reproductive growth, fiber dimension and chemical composition. Positive impact of increased gibberellins on biochemical composition, fiber dimension and their derivative values were demonstrated in some lines of transgenic kenaf including increased cellulose content (91%), fiber length and quality but it still requires further study to confirm the critical level of this particular bioactive GA in transgenic plants. PMID:26175614

Study of wurtzite and zincblende GaN/InN based solar cells alloys: First-principles investigation within the improved modified Becke-Johnson potential

KAUST Repository

Ul Haq, Bakhtiar

2014-09-01

Wurtzite GaInN alloys with flexible energy gaps are pronounced for their potential applications in optoelectronics and solar cell technology. Recently the unwanted built-in fields caused by spontaneous polarization and piezoelectric effects in wurtzite (WZ) GaInN, has turned the focus towards zinc-blende (ZB) GaInN alloys. To comprehend merits and demerits of GaInN alloys in WZ and ZB structures, we performed a comparative study of the structural, electronic and optical properties of Ga1-xInxN alloys with different In concentration using first-principles methodology with density function theory with generalized gradient approximations (GGA) and modified Becke-Johnson (mBJ) potential. Investigations pertaining to total energy of GaInN for the both phases, demonstrate a marginal difference, reflecting nearly equivalent stability of the ZB-GaInN to WZ-GaInN. The larger ionic radii of indium (In), result in larger values of lattice parameters of Ga1-xInxN with higher In concentration. For In deficient Ga1-xInxN, at first, the formation enthalpies increase rapidly as the In content approaches to 45% in WZ and 47% in ZB, and then decreases with the further increase in In concentration. ZB-Ga1-xInxN alloys exhibit comparatively narrower energy gaps than WZ, and get smaller with increase in In contents. The smaller values of effective masses of free carriers, in WZ phase, than ZB phase, reflect higher carrier mobility and electrical conductivity of WZ-Ga1-xInxN. Moreover wide energy gap of WZ-Ga1-xInxN results in large values of the absorption coefficients comparatively and smaller static refractive indices compared to ZB-Ga1-xInxN. Comparable electronic and optical characteristics of the ZB-Ga1-xInxN to WZ-Ga1-xInxN endorses it a material of choice for optoelectronics and solar cell applications besides the WZ-Ga1-xInxN. © 2014 Elsevier Ltd.

Study of wurtzite and zincblende GaN/InN based solar cells alloys: First-principles investigation within the improved modified Becke-Johnson potential

KAUST Repository

Ul Haq, Bakhtiar; Ahmed, Rashid; Shaari, Amiruddin; El Haj Hassan, Fouad; Kanoun, Mohammed; Goumri-Said, Souraya

2014-01-01

Wurtzite GaInN alloys with flexible energy gaps are pronounced for their potential applications in optoelectronics and solar cell technology. Recently the unwanted built-in fields caused by spontaneous polarization and piezoelectric effects in wurtzite (WZ) GaInN, has turned the focus towards zinc-blende (ZB) GaInN alloys. To comprehend merits and demerits of GaInN alloys in WZ and ZB structures, we performed a comparative study of the structural, electronic and optical properties of Ga1-xInxN alloys with different In concentration using first-principles methodology with density function theory with generalized gradient approximations (GGA) and modified Becke-Johnson (mBJ) potential. Investigations pertaining to total energy of GaInN for the both phases, demonstrate a marginal difference, reflecting nearly equivalent stability of the ZB-GaInN to WZ-GaInN. The larger ionic radii of indium (In), result in larger values of lattice parameters of Ga1-xInxN with higher In concentration. For In deficient Ga1-xInxN, at first, the formation enthalpies increase rapidly as the In content approaches to 45% in WZ and 47% in ZB, and then decreases with the further increase in In concentration. ZB-Ga1-xInxN alloys exhibit comparatively narrower energy gaps than WZ, and get smaller with increase in In contents. The smaller values of effective masses of free carriers, in WZ phase, than ZB phase, reflect higher carrier mobility and electrical conductivity of WZ-Ga1-xInxN. Moreover wide energy gap of WZ-Ga1-xInxN results in large values of the absorption coefficients comparatively and smaller static refractive indices compared to ZB-Ga1-xInxN. Comparable electronic and optical characteristics of the ZB-Ga1-xInxN to WZ-Ga1-xInxN endorses it a material of choice for optoelectronics and solar cell applications besides the WZ-Ga1-xInxN. © 2014 Elsevier Ltd.

The -29G/A FSH receptor gene polymorphism is associated with higher FSH and LH levels in normozoospermic men.

Science.gov (United States)

Tamburino, L; La Vignera, S; Tomaselli, V; Condorelli, R A; Cannarella, R; Mongioì, L M; Calogero, A E

2017-10-01

The functional role of the FSHR promoter -29G/A polymorphism (rs1394205) in men is not clear. Some studies failed to find a relationship between the FSHR -29G/A and follicle-stimulating hormone (FSH) levels and did not associate the SNP with male infertility. Only one study showed that the FSHR -29 SNP modulates serum FSH levels in Baltic young male cohort. Because the SNP -29G/A has to be shown to have a strong effect on in vitro transcription activity of the FSHR promoter and the activation of FSHR is necessary for a normal FSH function, this study was undertaken to assess whether the FSHR -29G/A SNP modulates the gonadal endocrine function in men. A total of 200 men with alteration of conventional sperm parameters or normozoospermia (according to the parameters WHO 2010), were genotyped by TaqMan Assay. Hormone levels were measured by immunoassay, and sperm analysis was performed according to the World Health Organization criteria. A significant gradient of increasing FSH levels across the FSHR -29G/A genotypes was observed (p men (n = 110), those with FSHR -29A-allele carriers (GA + AA and AA) had higher serum FSH (p men with the GG genotype. The carrier status of rs1394205 genotypes did not affect the other endocrine parameters neither in men with altered sperm parameters nor in normozoospermic men. The FSHR -29G/A polymorphism modulates FSH and, for the first time, LH serum levels and BMI in normozoospermic men. These findings underline the importance to pay close attention to the studies of genetic variations associated with clinical-endocrine parameters.

Impact ionization of excitons in electric field of GaN and quantum wells of GaN/AlGaN

International Nuclear Information System (INIS)

Nel'son, D.K.; Yakobson, M.A.; Kagan, V.D.; Gil, B.; Grandjean, N.; Beaumont, B.; Massier, J.; Gibart, P.

2001-01-01

The effect of the exciton states impact ionization in the GaN exploit films and in the GaN/AlGaN structures with quantum wells is studied. The study was carried out through the optical method, based on the exciton photoluminescence quenching by applying the electric field. It is established that in the process of the electrons relaxation by energy and pulse the scattering on the admixtures prevails over the scattering on the acoustic phonons. The average length of the hot electrons free run is evaluated. The average length of the hot electrons free run in the GaN/AlGaN wells proved to be by the value order higher than in the GaN epitaxial films, which is conditioned by decrease in the probability of the electrons scattering in the two-dimensional case [ru

Carrier quenching in InGaP/GaAs double heterostructures

Energy Technology Data Exchange (ETDEWEB)

Wells, Nathan P., E-mail: nathan.p.wells@aero.org; Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T. [The Aerospace Corporation, Physical Sciences Laboratories, P.O. Box 92957, Los Angeles, California 90009 (United States); Forbes, David V.; Hubbard, Seth M. [NanoPower Research Labs, Rochester Institute of Technology, 156 Lomb Memorial Dr., Rochester, New York 14623 (United States)

2015-08-14

Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kasanaboina, Pavan Kumar [Department of Electrical and Computer Engineering, North Carolina A& T State University, Greensboro, North Carolina 27411 (United States); Ahmad, Estiak [Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA& T State University, Greensboro, North Carolina 27401 (United States); Li, Jia; Iyer, Shanthi [Department of Electrical and Computer Engineering, North Carolina A& T State University, Greensboro, North Carolina 27411 (United States); Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA& T State University, Greensboro, North Carolina 27401 (United States); Reynolds, C. Lewis; Liu, Yang [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2015-09-07

Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Dhifallah, I., E-mail: ines.dhifallah@gmail.co [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Daoudi, M.; Bardaoui, A. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Eljani, B. [Unite de recherche sur les Hetero-Epitaxie et Applications, Faculte des Sciences de Monastir (Tunisia); Ouerghi, A. [Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay 91 46a0, Marcoussis (France); Chtourou, R. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia)

2011-05-15

Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E{sub e-hh}) and electron-light-hole (E{sub e-lh}) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-{delta}-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-{delta}-doped samples, we have determined the internal electric field introduced by ionized Si-{delta}-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: {yields} Studying HEMTs structures with different silicon doping content. {yields} An increase of the electric field in the InAs layer with increasing Si content. {yields} The interband energy transitions in the HEMTs structures have been obtained from PR. {yields} Experimental and theoretical values of transitions energies were in good agreement.

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

International Nuclear Information System (INIS)

Dhifallah, I.; Daoudi, M.; Bardaoui, A.; Eljani, B.; Ouerghi, A.; Chtourou, R.

2011-01-01

Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E e-hh ) and electron-light-hole (E e-lh ) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-δ-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-δ-doped samples, we have determined the internal electric field introduced by ionized Si-δ-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: → Studying HEMTs structures with different silicon doping content. → An increase of the electric field in the InAs layer with increasing Si content. → The interband energy transitions in the HEMTs structures have been obtained from PR. → Experimental and theoretical values of transitions energies were in good agreement.

Strain-balanced InGaN/GaN multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2014-07-21

InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1−x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1−y}N templates for x > y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1−x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1−y}N template. Growth of the In{sub y}Ga{sub 1−y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1−y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1−x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1−y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

International Nuclear Information System (INIS)

Song, Erdong; Martinez, Julio A; Li, Qiming; Pan, Wei; Wang, George T; Swartzentruber, Brian

2016-01-01

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power. (paper)

GaAsP on GaP top solar cells

Science.gov (United States)

Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

1985-01-01

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

Dependence on the growth direction of the strain in AlGaSb alloys

Energy Technology Data Exchange (ETDEWEB)

Rojas-Lopez, M; Delgado-Macuil, R; Gayou, V L; Orduna-Diaz, A [CIBA-Tlaxcala, IPN, Tlaxcala, Tlax. (Mexico); Momox-Beristain, E [FC-BUAP, Puebla, Pue. (Mexico); Salazar-Hernandez, B [CIICAp-UAEM, Cuernavaca, Mor. (Mexico); Rodriguez, A G, E-mail: marlonrl@yahoo.com.m [IICO-UASLP, San Luis Potosi, S.L.P. (Mexico)

2009-05-01

High resolution x-ray diffraction profiles were obtained from Al{sub x}Ga{sub 1-x}Sb layers grown on (001) and (111) GaSb substrates. The out of plane lattice parameter, was estimated directly from the symmetrical diffractions for (001) and (111) alloys. These results show that all the layers are strained, and those grown on (001) GaSb are slightly more strained than the corresponding layers grown on (111) GaSb. This difference is explained by the dependence of the strain ratio on growth direction. The out of plane lattice parameter as a function of Al content is higher than the corresponding bulk lattice parameter of Al{sub x}Ga{sub 1-x}Sb layers obtained with Vegard's law. Also, the perpendicular and the in-plane lattice parameter expected for pseudomorphic alloys, was estimated from the strain ratios, assuming an elastic deformation and using the EDX alloy composition to interpolate the elastic constants C{sub ij}. This estimation also shows that almost all the layers are fully strained.

Ga2O3 doping and vacancy effect in KNN—LT lead-free piezoceramics

Science.gov (United States)

Tan, Zhi; Xing, Jie; Jiang, Laiming; Zhu, Jianguo; Wu, Bo

2017-12-01

Ga2O3 was doped into 0.95(K0.48Na0.52)NbO3—0.05LiTaO3 (KNN—LT) ceramics and its influences on the sintering behavior, phase structure and electrical properties of ceramics were studied. Firstly, SEM observation exhibits that more and more glass phase appears in ceramics with the gradual addition of Ga2O3, which determines the continuous decrease in sintering temperatures. And the addition of Ga2O3 is also found to increase the orthorhombic—tetragonal transition temperature ( T O—T) of system to a higher level. Secondly, both the density and the coercive field ( E C) of ceramics increase firstly and then decrease with increasing the Ga2O3 content, and the KNN—LT— xGa sample at x = 0.004 shows a pinched P— E hysteresis loop. Finally, the impedance characteristics of KNN—LT— xGa ceramics were investigated at different temperatures, revealing a typical vacancy related conduction mechanism. This work demonstrates that Ga2O3 is a good sintering aid for KNN-based ceramics, and the vacancy plays an important role in the sintering and electrical behaviors of ceramics.

Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

KAUST Repository

Al-Jabr, Ahmad; Majid, Mohammed Abdul; Shen, Chao; Ng, Tien Khee; Ooi, Boon S.

2016-01-01

We increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing

Higher milk fat content is associated with higher 25-hydroxyvitamin D concentration in early childhood.

Science.gov (United States)

Vanderhout, Shelley M; Birken, Catherine S; Parkin, Patricia C; Lebovic, Gerald; Chen, Yang; O'Connor, Deborah L; Maguire, Jonathon L

2016-05-01

Current guidelines for cow's milk consumption in children older than age 2 years suggest 1% or 2% milk to reduce the risk of obesity. Given that milk is the main dietary source of vitamin D for North American children and that vitamin D is fat soluble, we hypothesized 25-hydroxyvitamin D (25(OH)D) concentration to be positively associated with the fat content of milk. The objective was to determine the relationship between the fat content of milk consumed and the serum 25(OH)D concentration; our secondary objective was to explore the role that the volume of milk consumed played in this relationship. We completed a cross-sectional study of children aged 12-72 months in the TARGetKids! research network. Multivariable linear regression was used to test the association between milk fat content and child 25(OH)D, adjusted for clinically relevant covariates. The interaction between volume of milk and fat content was examined. Two thousand eight hundred fifty-seven children were included in the analysis. The fat content of milk was positively associated with 25(OH)D (p = 0.03), and the interaction between the volume of milk consumed and the milk fat content was statistically significant (p = 0.005). Children who drank 1% milk needed 2.46 cups (95% confidence interval (CI) 2.38-2.54) of milk to have a 25(OH)D concentration similar to that of children who drank 1 cup of homogenized milk (3.25% fat). Children who consumed 1% milk had 2.05 (95% CI 1.73-2.42) times higher odds of having a 25(OH)D concentration <50 nmol/L compared with children who consumed homogenized milk. In conclusion, recommendations for children to drink lower-fat milk (1% or 2%) may compromise serum 25(OH)D levels and may require study to ensure optimal childhood health.

Strain-engineering of GaInAsSb overgrown layers and its effects on the optical properties of InAs/GaAs quantum dots

Science.gov (United States)

Salhi, A.; Alshaibani, S.; Alaskar, Y.; Albrithen, H.; Albedri, A.; Alyamani, A.

2018-05-01

The effect of antimony incorporation in In0.11Ga0.89As overgrown layers on the optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy has been studied. The results of photoluminescence, high resolution X-ray diffraction, atomic force microscopy, power and temperature-dependent photoluminescence from 77 K to 300 K have been correlated to characterize the grown samples. The wavelength emission increases with Sb content, and it reaches ∼1367 nm and does not increase further because of Sb incorporation's saturation in the In0.11Ga0.89As layer. To redshift further the wavelength to 1432 nm, a reduction of the growth temperature of the In0.11Ga0.89As1-ySby layer from 500 °C to 440 °C was necessary. This achievement is accompanied by the transformation of the QDs distribution to 2 QDs families. The extracted activation energies suggest that the PL quenching is mainly attributed to the thermal transfer of carriers in the QDs to the higher energy levels in the defects located within the In0.11Ga0.89As1-ySby SRLs. The variation of PL FWHM with temperature was interpreted by carrier thermalization and capture among different QDs within the same QD family or between small and large QD families.

Characterization of low Al content Al{sub x}Ga{sub 1-x}N epitaxial films grown by atmospheric-pressure MOVPE

Energy Technology Data Exchange (ETDEWEB)

Toure, A.; Halidou, I.; Benzarti, Z.; Bchetnia, A.; El Jani, B. [Faculte des Sciences, Unite de Recherche sur les Hetero-Epitaxies et Applications, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-Chimie des Materiaux, Faculte des Sciences de Monastir, Unite de Service Commun de Recherche ' ' High Resolution X-ray Diffractometer' ' , 5019 Monastir (Tunisia)

2012-05-15

Al{sub x}Ga{sub 1-x}N epitaxial films grown on GaN/sapphire by atmospheric-pressure metalorganic vapor phase epitaxy (AP-MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of Al{sub x}Ga{sub 1-x}N was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA + TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high-resolution X-ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half-maximum (FWHM) is observed with Al content. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

Science.gov (United States)

Segura, J.; Garro, N.; Cantarero, A.; Miguel-Sánchez, J.; Guzmán, A.; Hierro, A.

2007-04-01

We investigate the effects of electron and hole localization in the emission of a GaInNAs/GaAs single quantum well at low temperatures. Photoluminescence measurements varying the excitation density and under magnetic fields up to 14 T have been carried out. The results indicate that electrons are strongly localized in these systems due to small fluctuations in the nitrogen content of the quaternary alloy. The low linear diamagnetic shift of the emission points out the weakness of the Coulomb correlation between electrons and holes and suggests an additional partial localization of the holes.

Hot injection synthesis of Cu(In, Ga)Se2 nanocrystals with tunable bandgap

Science.gov (United States)

Latha, M.; Aruna Devi, R.; Velumani, S.

2018-05-01

CuIn1-xGaxSe2 nanocrystals (CIGSe NCs) were synthesized with different gallium (Ga) content by the hot injection process at low reaction temperature for the first time. The Ga content [x = Ga(In + Ga)] was varied such as 0, 0.25, 0.50 and 0.75 to study their influences on the structural, morphological, compositional and optical properties of CIGSe NCs. X-ray diffraction (XRD) analysis showed the peak shift towards higher 2θ angle. The lattice parameters a and c were decreased linearly as x value increases which propitiated Vegard's law. Transmission electron microscopy (TEM) analysis revealed a decrease in the particle size from 55 to 22 nm. Ultraviolet-visible-near infrared (UV-vis-NIR) absorption spectra indicated a blue shift towards the lower wavelength and bandgap was tuned from 1.04 to 1.41eV. Apart from this, CIGSe thin films were prepared by doctor blade coating method followed by annealing under Se/Ar atmosphere. The mobility of CIGSe thin film increased whereas resistivity decreased. Moreover, the photoconductivity of CIGSe annealed thin film exhibited almost 2-fold increase under an illumination of light. We realize from these results that the synthesized CIGSe NCs with x = 0.25 is expected to have the important perspective to be efficiently exploited as an absorber layer in cost-effective thin film solar cells.

Synthesis of Higher Alcohols via Syngas on Cu/Zn/Si Catalysts. Effect of Polyethylene Glycol Content

Science.gov (United States)

Cui, Rong-Ji; Yan, Xing; Fan, Jin-Chuan; Huang, Wei

2018-05-01

Cu/Zn/Si catalysts with different polyethylene glycol (PEG) content were prepared by a complete liquid-phase method, and characterized by XRD, H2-TPR, N2-adsorption, and XPS. The influence of PEG content on the higher alcohols synthesis from syngas was investigated. The results showed that addition of PEG can influence the texture and surface properties of the catalysts, and therefore affect their activity and product distribution. With an increase in PEG content, BET surface area, Cu crystallite size and surface active ingredient content of the catalysts first increased and then decreased, the CO conversion had similar variation tendency. However, the pore volume and pore diameter of the catalyst increased, and the binding energy of the active component and the content of Cu2O decreased, which resulted in higher catalyst selectivity towards higher alcohols. The highest C2+OH selectivity in total alcohols was 60.6 wt %.

Rht18 Semidwarfism in Wheat Is Due to Increased GA 2-oxidaseA9 Expression and Reduced GA Content

Czech Academy of Sciences Publication Activity Database

Ford, B. A.; Foo, E.; Sharwood, R.; Karafiátová, Miroslava; Vrána, Jan; MacMillan, C.; Nichols, D. S.; Steuernagel, B.; Uauy, C.; Doležel, Jaroslav; Chandler, M.; Spielmeyer, W.

2018-01-01

Roč. 177, č. 1 (2018), s. 168-180 ISSN 0032-0889 R&D Projects: GA MŠk(CZ) LO1204; GA ČR GBP501/12/G090 Institutional support: RVO:61389030 Keywords : green-revolution * gibberellin biosynthesis * ectopic expression * common wheat * gene * rice * barley * mutant * chromosomes Subject RIV: EB - Genetics ; Molecular Biology OBOR OECD: Genetics and heredity (medical genetics to be 3) Impact factor: 6.456, year: 2016

Growth of self-assembled (Ga)InAs/GaAs quantum dots and realization of high quality microcavities for experiments in the field of strong exciton photon coupling

International Nuclear Information System (INIS)

Loeffler, Andreas

2008-01-01

At the beginning, we improved the three dimensional optical confinement of the micropillars. The quality factor of the pillars could be increased by the use of higher reflectivity mirrors and a matched V/III ratio for the different epitaxial layers. Hence, a record quality factor of about 90000 was achieved for an active micropillar with 26 (30) mirror pairs in the top (bottom) DBR and a diameter of 4 μm. In parallel to this, we made studies on the growth of self-assembled GaInAs quantum dots on GaAs substrates. Here, the nucleation of three dimensional islands as well as their optical properties were object of the investigation. The morphological properties of the dots were analyzed by transmission and scanning electron microscopy, and the optical properties were investigated by photoluminescence and photoreflectance measurements. The optical and particularly the morphological properties of the self-assembled GaInAs quantum dots were essentially improved. Due to a low strain nucleation layer with an indium content of 30 %, the dot density could be reduced to 6-9 x 10 9 cm -2 and their geometric dimensions were increased to typical lengths between 50 and 100 nm and widths of about 30 nm. The lattice mismatch between the quantum dots and the surrounding matrix is decreased due to the reduced indium content. The minimized strain during the dot growth leads to an enhanced migration length of the deposited atoms on the surface. Finally, the obtained findings of the MBE growth of microcavities, their fabrication and the self-assembled island growth of GaInAs on GaAs were used for the realization of further samples. Low strain GaInAs quantum dots were embedded into the microresonators. These structures allowed for the first time the observation of strong coupling between light and matter in a semiconductor. In case of the low strain quantum dots with enlarged dimensions in the strong coupling regime, a vacuum Rabi-splitting of about 140 μeV between the cavity mode and

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

International Nuclear Information System (INIS)

De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

2010-01-01

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Iron clustering in GaSe epilayers grown on GaAs(111)B

International Nuclear Information System (INIS)

Moraes, A R de; Mosca, D H; Mattoso, N; Guimaraes, J L; Klein, J J; Schreiner, W H; Souza, P E N de; Oliveira, A J A de; Vasconcellos, M A Z de; Demaille, D; Eddrief, M; Etgens, V H

2006-01-01

In this paper we report on the structural, morphological and magnetic properties of semiconducting GaSe epilayers, grown by molecular beam epitaxy, doped to different iron contents (ranging from 1 to 22 at.% Fe). Our results indicate that iron forms metallic Fe nanoparticles with diameters ranging from 1 to 20 nm embedded in the crystalline GaSe matrix. The Fe incorporation proceeds by segregation and agglomeration and induces a progressive disruption of the lamellar GaSe epilayers. The magnetization as a function of the temperature for zero-field cooling with the magnetic field parallel to the surface of the sample provides evidence of superparamagnetic behaviour of the nanoparticles. Cathodoluminescence experiments performed at room temperature reveal semiconducting behaviour even for samples with Fe concentrations as high as 20 at.%

Characterization of the structural and optical properties of CuIn{sub 1−x}Ga{sub x}Se{sub 2} QJ;thin films by X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Wu, Ya-Fen, E-mail: yfwu@mail.mcut.edu.tw [Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan (China); Hsu, Hung-Pin [Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan (China); Chen, Hung-Ing [Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan (China)

2013-10-15

The structural and optical properties of Cu-poor CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films with different gallium contents grown using the co-evaporated technique were studied. Measurements of X-ray diffraction (XRD), temperature-dependent photoluminescence (PL), and photoreflectance (PR) were performed on the samples. The emission peaks in the PL spectra and PR spectra observed around 1.0–1.2 eV are attributed to donor–acceptor pairs and defect-related luminescence. With increasing gallium content, the linewidths of the luminescence spectra for the samples become wider, which we attribute to greater statistical disordering between indium and gallium. The structural properties of the CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films are further characterized by simulation of the XRD spectra with a theoretical model. It is found that the sample with higher gallium content exhibits less uniformity of microstructure size. The X-ray diffraction line profile analysis also shows a stronger internal strain in the sample with the higher gallium content, which is consistent with its broader microstructure size distribution. The conversion efficiency of the CuIn{sub 1−x}Ga{sub x}Se{sub 2}-based solar cells is also obtained and investigated through theoretical analysis. The experimental results coincide with the inferences given by the X-ray diffraction line profile analysis. -- Highlights: • Co-evaporated CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films with different gallium contents were studied. • XRD line profiles from the samples are analyzed by a theoretical model. • Less size uniformity and higher internal strain are obtained for high gallium sample. • The efficiency of CIGS solar cells is investigated through theoretical analysis. • The inferences from XRD spectra analysis coincide with experimental measurements.

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

Energy Technology Data Exchange (ETDEWEB)

Yang, Lin' an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying; Xu, Shengrui; Hao, Yue [State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

2016-04-28

Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A and 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.

Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Energy Technology Data Exchange (ETDEWEB)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.; Haščík, Š.; Gregušová, D.; Kuzmík, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Brunner, F.; Cho, E.-M. [Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Hashizume, T. [Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 060-0814 Sapporo, Japan and JST-CREST, 102-0075 Tokyo (Japan)

2014-09-14

Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from E_C-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about E_C-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.

Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

Science.gov (United States)

Bhattacharya, P. K.; Dhar, S.; Berger, P.; Juang, F.-Y.

1986-01-01

A study has been made of the effects of adding small amounts of In (0.2-1.2 pct) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by Briones and Collins (1982) and Skromme et al. (1985).

Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Kuwahara, Takaaki [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Kuwano, Noriyuki [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Kurisu, Akihiko; Okada, Narihito; Tadatomo, Kazuyuki [Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611 (Japan)

2012-03-15

A microstructure in an InGaN/GaN layer grown at the semipolar direction was observed in detail by means of transmission electron microscopy (TEM) in order to analyze the behaviour of dislocations. A (11 anti 22) GaN layer was first deposited on a maskless r (1 anti 102)-plane patterned-substrate, and then an In{sub x} Ga{sub 1-x}N (x =0.10, 0.24) was overgrown to be about 1 {mu}m in thickness. Dislocations near the interface of InGaN/GaN are classified into several types: 1 Threading dislocations lying on (0001). 2. Misfit dislocations lying on the interface of InGaN/GaN. 3. Dislocations along [1 anti 100] at a certain distance from the interface. 4. Dislocations newly formed at the interface and developing along [11 anti 20] on (0001). 5. Partial dislocations accompanied with a stacking fault on (0001). It was found that the misfit dislocations are arrayed in pairs at the direction along [1 anti 100] on the interface of (11 anti 22). Burgers vector of the misfit dislocations was found to be B = <2 anti 1 anti 13>/3. In case of B = [ anti 1 anti 123]/3, they are edge dislocations. The densities of dislocations and stacking faults increase with the In-content in InGaN. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Assessment of spatial distribution of soil heavy metals using ANN-GA, MSLR and satellite imagery.

Science.gov (United States)

Naderi, Arman; Delavar, Mohammad Amir; Kaboudin, Babak; Askari, Mohammad Sadegh

2017-05-01

This study aims to assess and compare heavy metal distribution models developed using stepwise multiple linear regression (MSLR) and neural network-genetic algorithm model (ANN-GA) based on satellite imagery. The source identification of heavy metals was also explored using local Moran index. Soil samples (n = 300) were collected based on a grid and pH, organic matter, clay, iron oxide contents cadmium (Cd), lead (Pb) and zinc (Zn) concentrations were determined for each sample. Visible/near-infrared reflectance (VNIR) within the electromagnetic ranges of satellite imagery was applied to estimate heavy metal concentrations in the soil using MSLR and ANN-GA models. The models were evaluated and ANN-GA model demonstrated higher accuracy, and the autocorrelation results showed higher significant clusters of heavy metals around the industrial zone. The higher concentration of Cd, Pb and Zn was noted under industrial lands and irrigation farming in comparison to barren and dryland farming. Accumulation of industrial wastes in roads and streams was identified as main sources of pollution, and the concentration of soil heavy metals was reduced by increasing the distance from these sources. In comparison to MLSR, ANN-GA provided a more accurate indirect assessment of heavy metal concentrations in highly polluted soils. The clustering analysis provided reliable information about the spatial distribution of soil heavy metals and their sources.

Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

International Nuclear Information System (INIS)

Beeler, M.; Bellet-Amalric, E.; Monroy, E.; Bougerol, C.

2014-01-01

THz intersubband transitions are reported down to 160 μm within AlGaN/GaN heterostructures following a 4-layer quantum well design. In such a geometry, the compensation of the polarization-induced internal electric field is obtained through creating a gradual increase in polarization field throughout the quantum “trough” generated by three low-Al-content layers. The intersubband transitions show tunable absorption with respect to doping level as well as geometrical variations which can be regulated from 53 to 160 μm. They also exhibit tunnel-friendly designs which can be easily integrated into existing intersubband device architectures.

Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

International Nuclear Information System (INIS)

Perozek, J; Lee, H-P; Bayram, C; Krishnan, B; Paranjpe, A; Reuter, K B; Sadana, D K

2017-01-01

An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quantify the uniformity of structural, optical, and electrical properties of these AlGaN/GaN HEMT structures, scanning electron microscopy, optical microscopy, atomic-force microscopy, x-ray diffraction ( ω /2 θ scan and reciprocal space mapping) and Hall effect measurements are employed across the center, middle, and edge of the 200 mm wafer. Small thickness (<3%) and Al-content (<3%) variations in (Al)GaN layers across the wafer are recorded whereas a considerable change (28%) in the electron mobility is observed across the wafer that correlates with variations in surface roughness, defectivity, and layer stress. We attribute the higher mobility in the middle of the wafer to lower interface scattering, thanks to lower surface roughness and less edge-type dislocation density. Additionally, argon (Ar) ion implantation is used as a means for planar electrical isolation, and a seven orders of magnitude decrease in leakage current is achieved when an optimum Ar dose of 10 13 cm −2 is used. The feasibility of scaling AlGaN/GaN HEMTs on a 200 mm Si(1 1 1) platform is discussed. (paper)

Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots

Science.gov (United States)

Tile, Ngcali; Ahia, Chinedu C.; Olivier, Jaco; Botha, Johannes Reinhardt

2018-04-01

This study focuses on the growth of GaSb/GaAs quantum dots (QD) using an atmospheric pressure MOVPE system. For the best uncapped dots, the average dot height, base diameter and density are 5 nm, 45 nm and 4.5×1010 cm-2, respectively. Capping of GaSb QDs at high temperatures caused flattening and formation of thin inhomogeneous GaSb layer inside GaAs resulting in no obvious QD PL peak. Capping at low temperatures lead to the formation of dot-like features and a wetting layer (WL) with distinct PL peaks for QD and WL at 1097 nm and 983 nm respectively. Some of the dot-like features had voids. An increase in excitation power caused the QD and WL peaks to shift to higher energies. This is attributed to electrostatic band bending leading to triangular potential wells, typical of type-II alignment between GaAs and strained GaSb. Variable temperature PL measurements of the QD sample showed the decrease in the intensity of the WL peak to be faster than that of the QD peak as the temperature increased.

Terahertz GaAs/AlAs quantum-cascade lasers

Energy Technology Data Exchange (ETDEWEB)

Schrottke, L., E-mail: lutz@pdi-berlin.de; Lü, X.; Rozas, G.; Biermann, K.; Grahn, H. T. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany)

2016-03-07

We have realized GaAs/AlAs quantum-cascade lasers operating at 4.75 THz exhibiting more than three times higher wall plug efficiencies than GaAs/Al{sub 0.25}Ga{sub 0.75}As lasers with an almost identical design. At the same time, the threshold current density at 10 K is reduced from about 350 A/cm{sup 2} for the GaAs/Al{sub 0.25}Ga{sub 0.75}As laser to about 120 A/cm{sup 2} for the GaAs/AlAs laser. Substituting AlAs for Al{sub 0.25}Ga{sub 0.75}As barriers leads to a larger energy separation between the subbands reducing the probability for leakage currents through parasitic states and for reabsorption of the laser light. The higher barriers allow for a shift of the quasi-continuum of states to much higher energies. The use of a binary barrier material may also reduce detrimental effects due to the expected composition fluctuations in ternary alloys.

Magnetic anisotropy in GaMnAs; Magnetische Anisotropie in GaMnAs

Energy Technology Data Exchange (ETDEWEB)

Daeubler, Joachim

2009-07-02

The goal of the present work was the detailed investigation of the impact of parameters like vertical strain, hole concentration, substrate orientation and patterning on the MA in GaMnAs. At first a method is introduced enabling us to determine the MA from angle-dependent magnetotransport measurements. This method was used to analyze the impact of vertical strain {epsilon}{sub zz} on the MA in a series of GaMnAs layers with a Mn content of 5% grown on relaxed InGaAs-templates. While hole concentration and Curie temperature were found to be unaffected by vertical strain, a significant dependence of the MA on {epsilon}{sub zz} was found. The most pronounced dependence was observed for the anisotropy parameter B{sub 2} {sub perpendicular} {sub to}, representing the intrinsic contribution to the MA perpendicular to the layer plane. For this parameter a linear dependence on {epsilon}{sub zz} was found, resulting in a strain-induced transition of the magnetic easy axis with increasing strain from in-plane to out-of-plane at {epsilon}{sub zz} {approx} -0.13%. Post-growth annealing of the samples leads to an outdiffusion and/or regrouping of the highly mobile Mn interstitial donor defects, resulting in an increase in both p and T{sub C}. For the annealed samples, the transition from in-plane to out-of-plane easy axis takes place at {epsilon}{sub zz} {approx} -0.07%. From a comparison of as-grown and annealed samples, B{sub 2} {sub perpendicular} {sub to} was found to be proportional to both p and {epsilon}{sub zz}, B{sub 2} {sub perpendicular} {sub to} {proportional_to} p .{epsilon}{sub zz}. To study the influence of substrate orientation on the magnetic properties of GaMnAs, a series of GaMnAs layers with Mn contents up to 5% was grown on (001)- and (113)A-oriented GaAs substrates. The hole densities and Curie temperatures, determined from magnetotransport measurements, are drastically reduced in the (113)A layers. The differences in the magnetic properties of (113)A- and

Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

International Nuclear Information System (INIS)

Li Yanbo; Zhang Yang; Zhang Yuwei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping

2012-01-01

We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (Ga Sb ) defect.

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.

Science.gov (United States)

Liao, S Y; Lu, C C; Chang, T; Huang, C F; Cheng, C H; Chang, L B

2014-08-01

Compared to AlGaN/GaN HEMT with 0.15 μm T-gate length, the AlInN/AlN/GaN one exhibits much higher current density and transconductance of 1558 mA/mm at Vd = 2 V and 330 mS/mm, respectively. The high extrinsic ft and fmax of 82 GHz and 70 GHz are extracted from AlInN/AlN/GaN HEMT. Besides, we find that the transconductance roll-off is significant in AlGaN/GaN, but largely improved in AlInN/AlN/GaN HEMT, suggesting that the high carrier density and lattice-matched epitaxial heterostructure is important to reach both large RF output power and high operation frequency, especially for an aggressively gate length scaling.

Investigations of the Optical Properties of GaNAs Alloys by First-Principle.

Science.gov (United States)

Borovac, Damir; Tan, Chee-Keong; Tansu, Nelson

2017-12-11

We present a Density Functional Theory (DFT) analysis of the optical properties of dilute-As GaN 1-x As x alloys with arsenic (As) content ranging from 0% up to 12.5%. The real and imaginary parts of the dielectric function are investigated, and the results are compared to experimental and theoretical values for GaN. The analysis extends to present the complex refractive index and the normal-incidence reflectivity. The refractive index difference between GaN and GaNAs alloys can be engineered to be up to ~0.35 in the visible regime by inserting relatively low amounts of As-content into the GaN system. Thus, the analysis elucidates on the birefringence of the dilute-As GaNAs alloys and comparison to other experimentally characterized III-nitride systems is drawn. Our findings indicate the potential of GaNAs alloys for III-nitride based waveguide and photonic circuit design applications.

Growth and characterization of Ga(As,N) and (In,Ga)(As,N)

International Nuclear Information System (INIS)

Mussler, G.

2005-01-01

This dissertation deals with the MBE growth and characterization of Ga(As,N) and (In,Ga)(As,N). The work commences with the optimization of the Ga(As,N) growth. Owing to a large miscibility gap of GaN in GaAs, the incorporation of nitrogen into GaAs causes a structural degradation that is dependent on the substrate temperature, the nitrogen concentration, and the quantum well thickness. Another problem related to the growth of Ga(As,N) are point defects that have a detrimental influence on optical properties. A thermal treatment of Ga(As,N) reduces the concentration of these point defects. This leads to a substantial improvement of optical properties. We will show that nitrogen split interstitials that incorporate into gallium and arsenic vacancies may be attributed to these point defects. A thermal treatment of Ga(As,N) at high temperatures, on the contrary, results in a creation of extended defects which are detrimental to optical properties. We show that the temperature of the thermal treatment that yields the highest photoluminescence intensity is nitrogen concentration-dependent. The growth of (In,Ga)(As,N) is similar with respect to Ga(As,N). Again, one has to face a high miscibility gap of (In,Ga)N in (In,Ga)As that results in a structural degradation. A thermal treatment of (In,Ga)(As,N) is also beneficial for improving optical properties. We show that a thermal treatment of (In,Ga)As results in an indium diffusion that is suppressed by the incorporation of nitrogen. The characterization of (In,Ga)(As,N) edge emitting lasers shows emission at wavelengths up to 1366 nm. With higher nitrogen concentrations, there is a strong increase of the threshold current density and a decrease of the output power

P-type doping of GaN

International Nuclear Information System (INIS)

Wong, R.K.

2000-01-01

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover

P-type doping of GaN

Energy Technology Data Exchange (ETDEWEB)

Wong, Raechelle Kimberly [Univ. of California, Berkeley, CA (United States)

2000-04-01

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer

International Nuclear Information System (INIS)

Fang, Zhilai; Shen, Xiyang; Wu, Zhengyuan; Zhang, Tong-Yi

2015-01-01

Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

International Nuclear Information System (INIS)

Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

2010-01-01

A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

Science.gov (United States)

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-03-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

Energy Technology Data Exchange (ETDEWEB)

Hospodková, A.; Oswald, J.; Pangrác, J.; Kuldová, K.; Zíková, M.; Vyskočil, J.; Hulicius, E., E-mail: hulicius@fzu.cz

2016-01-01

This review paper summarizes some of results achieved during last years of our quantum dot (QD) research. We show that the QD shape (aspect ratio and elongation) significantly influences the QD photoluminescence (PL) spectrum. Magnetophotoluminescence can be used for determination of the anisotropy of QDs. While the calculated shifts in magnetic field of the energies of higher radiative transitions are found to be sensitive to the lateral elongation, the shift of the lowest transition is determined mainly by the exciton effective mass. This behavior can be used for determining both the effective mass and the elongation fairly reliably from the magnetophotoluminescence spectra displaying at least two resolved bands. Lateral shape of InAs/GaAs QDs in vertically correlated structures was also studied. We found the ways to control the QD elongation and consequently the energy difference between PL transitions by adjusting properly the spacer layer thickness. The main goal was to redshift QD PL emission towards telecommunication wavelengths of Metal Organic Vapor Phase Epitaxy prepared InAs/GaAs QDs using InGaAs or GaAsSb covering strain reducing layer (SRL). Our results proved that GaAsSb SRL improves the QD PL properties and the type I or type II band alignment can be controlled by both, GaAsSb composition and QD size. Maintaining the type I heterostructure is important for high luminescence efficiency and emission wavelength stability of QD structure. The simulation of electron structure in InAs QDs covered with GaAsSb SRL and experimental results reveal the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The type II structure of InAs/GaAs QDs covered by GaAsSb SRL with Sb content near 30% enabled us to achieve extremely long emission wavelength at 1.8 µm. The high amount of antimony in the SRL causes the preservation of QD size, and increased QD size prolongs the PL wavelength. The type II heterostructures with

Comparison of dynamic changes in endogenous hormone level, water content and water-soluble sugars in camellia oleifera of different ages

International Nuclear Information System (INIS)

Hu, J.; Shah, F.A.; Fu, S.; Wu, W.

2017-01-01

The aim of this study is to investigate and understand the dynamic changes and the possible functions of hormones, water and sugar content during the development of C. oleifera. We analyzed and compared WWC, WSS and five endogenous hormones (DHZR, ZR, GA, IAA and ABA) contents between May and August in C. oleifera plants at different ages from the same orchard. The results showed that WWC, WSS, DHZR, ZR, GA, IAA and ABA contents varied from 61.64%-74.15%, 21.24mg/g-62.44mg/g, 6.237ng/g-38.342ng/g, 6.215ng/g-16.721ng/g, 5.668ng/g-18.024ng/g, 24.753ng/g-147.507ng/g and 66.541ng/g-156.212ng/g, respectively. WWC showed a decrease-increase-decrease variation pattern, while the WSS contents demonstrated a generally increasing trend with increasing tree age. The levels of ABA in leaves sampled in August was higher than that in May, but the opposite was found for the GA and IAA levels. Tree ages were negatively correlated with ZR and GA concentration at the 1% or 5% significance level. The results of this study broaden our understanding of the interrelationships between phytohormones, WWC, and WSS content in the growth and development of C. oleifera. (author)

Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 {mu}m

Energy Technology Data Exchange (ETDEWEB)

Sharma, T.K.; Zorn, M.; Zeimer, U.; Kissel, H.; Bugge, F.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2005-09-01

Highly strained In{sub x}Ga{sub 1-x}As quantum wells (QWs) with GaAs barriers emitting around 1.2 {mu}m are grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures using conventional precursors. The effects of growth temperature, V/III ratio and growth rate on QW composition and luminescence properties are studied. The variation of indium incorporation with V/III ratio at a growth temperature of 510 C is found to be opposite to the results reported for 700 C. By an appropriate choice of the growth parameters, we could extend the room temperature photoluminescence (PL) wavelength of InGaAs/GaAs QWs up to about 1.24 {mu}m which corresponds to an average indium content of 41% in the QW. The results of the growth study were applied to broad area laser diodes emitting at 1193 nm with low threshold current densities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Unusual crystallization behavior in Ga-Sb phase change alloys

Directory of Open Access Journals (Sweden)

Magali Putero

2013-12-01

Full Text Available Combined in situ X-ray scattering techniques using synchrotron radiation were applied to investigate the crystallization behavior of Sb-rich Ga-Sb alloys. Measurements of the sheet resistance during heating indicated a reduced crystallization temperature with increased Sb content, which was confirmed by in situ X-ray diffraction. The electrical contrast increased with increasing Sb content and the resistivities in both the amorphous and crystalline phases decreased. It was found that by tuning the composition between Ga:Sb = 9:91 (in at.% and Ga:Sb = 45:55, the change in mass density upon crystallization changes from an increase in mass density which is typical for most phase change materials to a decrease in mass density. At the composition of Ga:Sb = 30:70, no mass density change is observed which should be very beneficial for phase change random access memory (PCRAM applications where a change in mass density during cycling is assumed to cause void formation and PCRAM device failure.

Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

Science.gov (United States)

Lund, Cory; Hestroffer, Karine; Hatui, Nirupam; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-11-01

Smooth relaxed N-polar InGaN films were grown by metal-organic CVD (MOCVD) on N-polar InGaN pseudosubstrates (PSs) using a novel digital approach consisting of a constant In precursor flow with the pulsed injection of H2 carrier gas. InGaN layers grown on PSs exhibited an In composition of about 50% higher than those of the layers grown on N-polar GaN templates, assuming the in-plane lattice constant of the relaxed PSs, corresponding to In0.11Ga0.89N. Additionally, the luminescence recorded from InGaN layers grown on PSs at 490 nm was twice as intense as that obtained from the layers deposited on coloaded GaN-on-sapphire templates, which emitted at 430 nm.

An A20/AN1-type zinc finger protein modulates gibberellins and abscisic acid contents and increases sensitivity to abiotic stress in rice (Oryza sativa).

Science.gov (United States)

Zhang, Ye; Lan, Hongxia; Shao, Qiaolin; Wang, Ruqin; Chen, Hui; Tang, Haijuan; Zhang, Hongsheng; Huang, Ji

2016-01-01

The plant hormones gibberellins (GA) and abscisic acid (ABA) play important roles in plant development and stress responses. Here we report a novel A20/AN1-type zinc finger protein ZFP185 involved in GA and ABA signaling in the regulation of growth and stress response. ZFP185 was constitutively expressed in various rice tissues. Overexpression of ZFP185 in rice results in a semi-dwarfism phenotype, reduced cell size, and the decrease of endogenous GA3 content. By contrast, higher GA3 content was observed in RNAi plants. The application of exogenous GA3 can fully rescue the semi-dwarfism phenotype of ZFP185 overexpressing plants, suggesting the negative role of ZFP185 in GA biosynthesis. Besides GA, overexpression of ZFP185 decreased ABA content and expression of several ABA biosynthesis-related genes. Moreover, it was found that ZFP185, unlike previously known A20/AN1-type zinc finger genes, increases sensitivity to drought, cold, and salt stresses, implying the negative role of ZFP185 in stress tolerance. ZFP185 was localized in the cytoplasm and lacked transcriptional activation potential. Our study suggests that ZFP185 regulates plant growth and stress responses by affecting GA and ABA biosynthesis in rice. © The Author 2015. Published by Oxford University Press on behalf of the Society for Experimental Biology. All rights reserved. For permissions, please email: journals.permissions@oup.com.

Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy

Science.gov (United States)

Friede, Sebastian; Tomm, Jens W.; Kühn, Sergei; Hoffmann, Veit; Wenzel, Hans

2017-02-01

Waveguide (WG) architectures of 420-nm emitting InAlGaN/GaN diode lasers are analyzed by photoluminescence (PL) and photocurrent (PC) spectroscopy using a nearfield scanning optical microscope (NSOM) for excitation and detection. The measurements with a spatial resolution of 100 nm are implemented by scanning the fiber tip along the unprepared front facets of standard devices. PL is collected by the fiber tip, whereas PCs are extracted from the contacts that are anyway present for power supply. The mechanisms of signal generation are addressed in detail. The components of the `optical active region', multiple quantum wells (MQW), WGs, and cladding layers are separately inspected. Even separate analysis of p- and n-sections of the WG become possible. Defect levels are detected in the p-part of the WG. Their presence is consistent with the doping by Mg. An increased efficiency of carrier capture into InGaN/GaN WGs compared to GaN WGs is observed. Thus, beyond the improved optical confinement, the electrical confinement is improved, as well. NSOM PL and PC at GaN based devices do not reach the clarity and spatial resolution for WG mode analysis as seen before for GaAs based devices. This is due to higher modal absorption and higher WG losses. NSOM based optical analysis turns out to be an efficient tool for analysis of single layers grown into InAlGaN/GaN diode laser structures, even if this analysis is done at a packaged ready-to-work device.

The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

International Nuclear Information System (INIS)

Moldavskaya, L. D.; Vostokov, N. V.; Gaponova, D. M.; Danil'tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Shashkin, V. I.

2008-01-01

A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 μm at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 x 10 9 cm Hz 1/2 W -1

Investigation of gallium redistribution processes during Cu(In,Ga)Se{sub 2} absorber formation from electrodeposited/annealed oxide precursor films

Energy Technology Data Exchange (ETDEWEB)

Sidali, T., E-mail: tarik.sidali@edf.fr; Duchatelet, A.; Chassaing, E.; Lincot, D.

2015-05-01

A way to prepare metallic precursors for CuIn{sub 1−x},Ga{sub x}Se{sub 2} (CIGS) solar cells has been recently introduced leading to efficiencies above 12.4%. It consists in the electrodeposition of Cu-In-Ga mixed oxides in an acidic nitrate aqueous solution followed by thermal reduction and selenization. This paper investigates, in a first part, the nucleation and growth mechanisms taking place during the co-electrodeposition of Cu-In-Ga oxide/hydroxide film. Scanning Electron Microscope observations coupled to Energy Dispersive X-ray spectrometry point out that the deposition is initiated by the formation of metallic copper nuclei. These nuclei enable the growth of Cu-In-Ga oxide film. This observation confirms that freshly deposited copper catalyzes nitrate reduction leading to an increase in the surface pH enabling the precipitation of the Cu-In-Ga hydroxides. In a second part, precursor films were elaborated with increasing Ga(NO{sub 3}){sub 3} concentration. After reduction of the films in hydrogen and selenization heat treatments, X-ray diffraction analysis shows the incorporation of Ga into the CIGS phase with increasing Ga content in the optimal composition range for photovoltaic applications (x = 0.25-0.34). Gallium composition profiles are evidenced in the films with a tendency to higher concentration near the Mo surface. Increasing annealing temperature allows a better homogenization of Ga in the film. The consequences are correlated to optoelectronic measurements (Eg and cell efficiency) with bandgap measurement and cell efficiencies (10 to 12%). - Highlights: • Electrodeposition starts with copper nucleation. • Gallium content in the precursor is tuned by Ga(III) concentration. • Increasing selenization temperature promotes Ga homogenization in CIGS.

Thermoanalytical investigation of the hydrogen absorption behaviour of Sm{sub 2}Fe{sub 17-x}Ga{sub x} at high hydrogen pressures

Energy Technology Data Exchange (ETDEWEB)

Handstein, A.; Kubis, M.; Gebel, B.; Mueller, K.-H.; Schultz, L. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe; Gutfleisch, O.; Harris, I.R. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe]|[Birmingham Univ. (United Kingdom). School of Metallurgy and Materials

1998-07-01

The complete disproportionation of Sm{sub 2}Fe{sub 17-x}Ga{sub x} during annealing in hydrogen is hindered due to an increased stability of the compounds with a higher Ga content (x {>=} 1). Therefore the HD process as the first step of HDDR (hydrogenation-disproportionation-desorption-recombination) has to be carried out at a high hydrogen pressure for x {>=} 1. The hydrogen absorption behaviour of Sm{sub 2}Fe{sub 17-x}Ga{sub x} (x = 0, 0.5, 1 and 2) was investigated by means of hydrogen differential thermal analysis (HDTA) and high pressure differential scanning calorimetry (HPDSC) at hydrogen pressures up to 70 bar. A dependency of hydrogenation and disproportionation temperatures on hydrogen pressure and Ga content was found. The comparison with other substituents (M = Al and Si) instead of M = Ga showed an increased stability of Sm{sub 2}Fe{sub 17-x}M{sub x} compounds against disproportionation by hydrogen in the sequence Al, Ga and Si. The Curie temperatures of the interstitially hydrogenated Th{sub 2}Zn{sub 17}-type materials increase with the hydrogen pressure. In order to produce coercive and thermally stable Sm{sub 2}Fe{sub 15}Ga{sub 2}C{sub y} powder by means of the HDDR process, we recombined material disproportionated at different hydrogen pressures. Preliminary results of magnetic properties of this HDDR treated and gas-carburized Sm{sub 2}Fe{sub 15}Ga{sub 2}C{sub y} are discussed. (orig.)

Evolution of the structural and magnetic properties of sputtered Tb{sub x}Fe{sub 73}Ga{sub 27-x} (7 at.% ≤ x ≤ 11 at.%) thin films upon the increase of Tb content

Energy Technology Data Exchange (ETDEWEB)

Ranchal, R., E-mail: rociran@fis.ucm.es [Dpto. Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, Madrid 28040 (Spain); Fin, S. [Dipartimento di Fisica, Università di Ferrara, Via Saragat 1, 44122 Ferrara (Italy); Bisero, D. [CNISM and Dipartimento di Fisica, Università di Ferrara, Via Saragat 1, 44122 Ferrara (Italy)

2016-05-15

Tb{sub x}Fe{sub 73}Ga{sub 27-x} (7 at.% ≤ x ≤ 11 at.%) ternary alloys have been obtained by cosputtering from Tb{sub 33}Fe{sub 67} and Fe{sub 72}Ga{sub 28} targets. In contrast with other Tb–Fe–Ga compounds that consist of just one structural phase, the diffraction pattern of the Tb{sub 7}Fe{sub 73}Ga{sub 20} shows the presence of two different phases related to binary Tb–Fe and Fe–Ga alloys. This microstructure evolves as the Tb content is increased, and for a Tb of 11 at.% X-ray diffractometry only evidences the presence of a phase close to the TbFe{sub 2}. Although none of the studied samples show perpendicular magnetic anisotropy, there is a significant component of the magnetization perpendicular to the sample plane. The increase of the Tb content on the compounds from 7 at.% to 11 at.% enhances this component most probably due to the shift of the microstructure towards one similar to the TbFe{sub 2}. - Highlights: • Tb{sub x}Fe{sub 73}Ga{sub 27-x} (7 at.% ≤ x ≤ 11 at.%) thin films grown by cosputtering. • Evolution of the microstructure upon the increase of Tb. • Out of plane component of the magnetization stable up to 800 Oe.

Elimination of trench defects and V-pits from InGaN/GaN structures

International Nuclear Information System (INIS)

Smalc-Koziorowska, Julita; Grzanka, Ewa; Czernecki, Robert; Schiavon, Dario; Leszczyński, Mike

2015-01-01

The microstructural evolution of InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor phase epitaxy was studied as a function of the growth temperature of the GaN quantum barriers (QBs). We observed the formation of basal stacking faults (BSFs) in GaN QBs grown at low temperature. The presence of BSFs terminated by stacking mismatch boundaries (SMBs) leads to the opening of the structure at the surface into a V-shaped trench loop. This trench may form above an SMB, thereby terminating the BSF, or above a junction between the SMB and a subsequent BSF. Fewer BSFs and thus fewer trench defects were observed in GaN QBs grown at temperatures higher than 830 °C. Further increase in the growth temperature of the GaN QBs led to the suppression of the threading dislocation opening into V-pits

Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

Science.gov (United States)

Kuo, Dong-Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

2015-01-01

Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential () growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm-3 and electrical mobility of 15.7 ± 4.2 cm2 V-1 s-1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/ n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.

A Comparative 68Ga-Citrate and 68Ga-Chloride PET/CT Imaging of Staphylococcus aureus Osteomyelitis in the Rat Tibia

Directory of Open Access Journals (Sweden)

Petteri Lankinen

2018-01-01

Full Text Available There may be some differences in the in vivo behavior of 68Ga-chloride and 68Ga-citrate leading to different accumulation profiles. This study compared 68Ga-citrate and 68Ga-chloride PET/CT imaging under standardized experimental models. Methods. Diffuse Staphylococcus aureus tibial osteomyelitis and uncomplicated bone healing rat models were used (n=32. Two weeks after surgery, PET/CT imaging was performed on consecutive days using 68Ga-citrate or 68Ga-chloride, and tissue accumulation was confirmed by ex vivo analysis. In addition, peripheral quantitative computed tomography and conventional radiography were performed. Osteomyelitis was verified by microbiological analysis and specimens were also processed for histomorphometry. Results. In PET/CT imaging, the SUVmax of 68Ga-chloride and 68Ga-citrate in the osteomyelitic tibias (3.6 ± 1.4 and 4.7 ± 1.5, resp. were significantly higher (P=0.0019 and P=0.0020, resp. than in the uncomplicated bone healing (2.7 ± 0.44 and 2.5 ± 0.49, resp.. In osteomyelitic tibias, the SUVmax of 68Ga-citrate was significantly higher than the uptake of 68Ga-chloride (P=0.0017. In animals with uncomplicated bone healing, no difference in the SUVmax of 68Ga-chloride or 68Ga-citrate was seen in the operated tibias. Conclusions. This study further corroborates the use of 68Ga-citrate for PET imaging of osteomyelitis.

High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods

Energy Technology Data Exchange (ETDEWEB)

Gonzalez-Posada Flores, F; Redondo-Cubero, A; Bengoechea, A; Brana, A F; Munoz, E [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM) and Dpto. IngenierIa Electronica (DIE), ETSI de Telecomunicacion, Universidad Politecnica de Madrid, E-28040 Madrid (Spain); Gago, R [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Jimenez, A [Dpto. Electronica, Escuela Politecnica Superior, Universidad de Alcala, E-28805 Alcala de Henares, Madrid (Spain); Grambole, D, E-mail: fposada@die.upm.e [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, PF 51019, D-01314 Dresden (Germany)

2009-03-07

Hydrogen (H) incorporation into AlGaN/GaN heterostructures used in high electron mobility transistors, grown by different methods, is studied by high-resolution depth profiling. Samples grown on sapphire and Si(1 1 1) substrates by molecular-beam epitaxy and metal-organic vapour phase epitaxy; involving H-free and H-containing precursors, were analysed to evaluate the eventual incorporation of H into the wafer. The amount of H was measured by means of nuclear reaction analysis (NRA) using the {sup 1}H({sup 15}N,{alpha}{gamma}){sup 12}C reaction up to a depth of {approx}110 nm into the heterostructures. Interestingly, the H profiles are similar in all the samples analysed, with an increasing H content towards the surface and a negligible H incorporation into the GaN layer (0.24 {+-} 0.08 at%) or at the AlGaN/GaN interface. Therefore, NRA shows that H uptake is not related to the growth process or technique employed and that H contamination may be due to external sources after growth. The eventual correlation between topographical defects on the AlGaN surface and the H concentration are also discussed.

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

Science.gov (United States)

Williams, Logan; Kioupakis, Emmanouil

2017-11-01

InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, high-efficiency visible LEDs with thick active regions. In this work, we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75-3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.

Engaging adolescents with LD in higher order thinking about history concepts using integrated content enhancement routines.

Science.gov (United States)

Bulgren, Janis; Deshler, Donald D; Lenz, B Keith

2007-01-01

The understanding and use of historical concepts specified in national history standards pose many challenges to students. These challenges include both the acquisition of content knowledge and the use of that knowledge in ways that require higher order thinking. All students, including adolescents with learning disabilities (LD), are expected to understand and use concepts of history to pass high-stakes assessments and to participate meaningfully in a democratic society. This article describes Content Enhancement Routines (CERs) to illustrate instructional planning, teaching, and assessing for higher order thinking with examples from an American history unit. Research on the individual components of Content Enhancement Routines will be illustrated with data from 1 of the routines. The potential use of integrated sets of materials and procedures across grade levels and content areas will be discussed.

Growth and characterization of cubic AlGaN/GaN based devices

Energy Technology Data Exchange (ETDEWEB)

Potthast, S.

2006-11-15

Cubic GaN and AlGaN layers are grown by radio frequency plasma assisted molecular beam epitaxy on freestanding 3C-SiC (001) substrates. Detailed analysis of the substrate quality reveal a direct dependence of the roughness of the 3C-SiC on the dislocation density. Additionally a strong influence of the substrate quality on the quality of cubic GaN layers is found. GaN, AlGaN and AlN buffer layers grown at different temperatures are used to improve the structural properties of the c-GaN buffer. Best values are obtained for AlN buffers deposited at T{sub Subs}=720 C. Furthermore, the growth temperature of the buffer itself is varied. Optimized results are found for T{sub Subs}=720 C grown under a Ga coverage of one monolayer. On top of the GaN buffer, AlGaN films (0Ga coverages of one monolayer and much greater than one monolayer. A linear dependence between the Al metal flux and the Al mole fraction is measured. Investigation of the growth front using reflection high energy electron diffraction as a probe, show a predominant two-dimensional growth mode. With increasing Al mole fraction, a change in the resistivity of the AlGaN layer is observed due to the gettering of oxygen by aluminum and the variation of the oxygen ionization energy as a function of the Al content. Schottky diodes are fabricated on GaN and AlGaN using nickel as contact material. A strong deviation of the current voltage characteristics from thermionic emission theory is found, measuring anormal high leakage current, caused by the presence of oxygen donors near the surface. It is investigated, that thermal annealing in air reduces the reverse current by three orders of magnitude. AlGaN/GaN are used to fabricate heterojunction field effect transistor structures. Analysis of the capacitance-voltage characteristics at T=150 K revealed clear evidence for the existence of a two-dimensional electron gas, and a sheet carrier concentration of about 1.6 x 10{sup 12}cm{sup -2} is

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Science.gov (United States)

Kyaw, Zabu; Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhen Gang; Zhang, Xue Liang; Ji, Yun; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-01-13

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.

Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Ulloa, J. M., E-mail: jmulloa@isom.upm.es; Utrilla, A. D.; Guzman, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Dpto. Ingeniería Electrónica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Reyes, D. F.; Ben, T.; González, D. [Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

2014-10-07

Changing the growth rate during the heteroepitaxial capping of InAs/GaAs quantum dots (QDs) with a 5 nm-thick GaAsSbN capping layer (CL) strongly modifies the QD structural and optical properties. A size and shape transition from taller pyramids to flatter lens-shaped QDs is observed when the CL growth rate is decreased from 1.5 to 0.5 ML/s. This indicates that the QD dissolution processes taking place during capping can be controlled to some extent by the GaAsSbN CL growth rate, with high growth rates allowing a complete preservation of the QDs. However, the dissolution processes are shown to have a leveling effect on the QD height, giving rise to a narrower size distribution for lower growth rates. Contrary to what could be expected, these effects are opposite to the strong blue-shift and improvement of the photoluminescence (PL) observed for higher growth rates. Nevertheless, the PL results can be understood in terms of the strong impact of the growth rate on the Sb and N incorporation into the CL, which results in lower Sb and N contents at higher growth rates. Besides the QD-CL band offsets and QD strain, the different CL composition alters the band alignment of the system, which can be transformed to type-II at low growth rates. These results show the key role of the alloyed CL growth parameters on the resulting QD properties and demonstrate an intricate correlation between the PL spectra and the sample morphology in complex QD-CL structures.

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Science.gov (United States)

Chèze, C.; Feix, F.; Lähnemann, J.; Flissikowski, T.; Kryśko, M.; Wolny, P.; Turski, H.; Skierbiszewski, C.; Brandt, O.

2018-01-01

Previously, we found that N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C . This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially uniform green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.

Epitaxy of (Ga,Mn)As; Epitaxie von (Ga,Mn)As

Energy Technology Data Exchange (ETDEWEB)

Utz, Martin

2012-09-14

The focus of this work lies on the enhancement of the magnetic properties of the ferromagnetic semiconductor Gallium manganese arsenide (GaMnAs), which is a basic material for the research in spintronics: It is told, how a high sample reproducibility and a strong control over the growth process can be gained by applying band edge spectroscopy and a special procedure for the material flux calibration. Also the most important methods for the electrical characterization of GaMnAs are discussed in a critical manner by showing that the anomalous Hall Effect contributes significantly to the Hall resistance even at room temperature and that Novak's method for the termination of the Curie-temperature provides correct values for layers with low defect concentration. Furthermore it is reported on the considerable enlargement of the useable parameter space of GaMnAs which was enabled by the enhanced control over the growth process: It was possible to grow layers with a very high Manganese content of 22% and Curie temperatures of 172 K and even once were produced which showed a strong magnetic moment despite an insulating behaviour at low temperatures. A last key aspect is the growth and characterization of ultra-thin GaMnAs layers, giving prospects for gating experiments or experiments on the proximity effect as these layers combine high Curie temperatures with insulating behaviour.

Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

Science.gov (United States)

Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi

2017-10-01

NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm-2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm-3 and the 2 DEG electron density recovered to 9.57 × 1012 cm-2.

Investigation of InGaN/GaN laser degradation based on luminescence properties

Energy Technology Data Exchange (ETDEWEB)

Wen, Pengyan; Zhang, Shuming, E-mail: smzhang2010@sinano.ac.cn; Liu, Jianping; Li, Deyao; Zhang, Liqun; Sun, Qian; Tian, Aiqin; Zhou, Kun; Yang, Hui [Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhou, Taofei [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China)

2016-06-07

Degradation of InGaN/GaN laser diode (LD) is investigated based on the luminescence properties. Gradual degradation of the LD is presented with the threshold current increase and the slope efficiency decrease. The cathodoluminescence and photoluminescence characterizations of the LD show a dislocation independent degradation of the active region under the ridge. Detailed studies on the temperature-dependent micro-photoluminescence and the electroluminescence indicate that the degradation of the LD is attributed to the generation of non-radiative recombination centers in the local multiple quantum well regions with lower indium content. The activation energy of the non-radiative recombination centers is about 10.2 meV.

Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets

Directory of Open Access Journals (Sweden)

Yang-Zhe Su

2018-06-01

Full Text Available Gallium nitride (GaN is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases. The zinc-blende GaN has superior electronic and optical properties over wurtzite one. In this report, GaN nanodots can be fabricated by Ga metal droplets in ultra-high vacuum and then nitridation by nitrogen plasma. The size, shape, density, and crystal structure of GaN nanodots can be characterized by transmission electron microscopy. The growth parameters, such as pre-nitridation treatment on Si surface, substrate temperature, and plasma nitridation time, affect the crystal structure of GaN nanodots. Higher thermal energy could provide the driving force for the phase transformation of GaN nanodots from zinc-blende to wurtzite structures. Metastable zinc-blende GaN nanodots can be synthesized by the surface modification of Si (111 by nitrogen plasma, i.e., the pre-nitridation treatment is done at a lower growth temperature. This is because the pre-nitridation process can provide a nitrogen-terminal surface for the following Ga droplet formation and a nitrogen-rich condition for the formation of GaN nanodots during droplet epitaxy. The pre-nitridation of Si substrates, the formation of a thin SiNx layer, could inhibit the phase transformation of GaN nanodots from zinc-blende to wurtzite phases. The pre-nitridation treatment also affects the dot size, density, and surface roughness of samples.

Exploring the radiosynthesis and in vitro characteristics of [68 Ga]Ga-DOTA-Siglec-9.

Science.gov (United States)

Jensen, Svend B; Käkelä, Meeri; Jødal, Lars; Moisio, Olli; Alstrup, Aage K O; Jalkanen, Sirpa; Roivainen, Anne

2017-07-01

Vascular adhesion protein 1 is a leukocyte homing-associated glycoprotein, which upon inflammation rapidly translocates from intracellular sources to the endothelial cell surface. It has been discovered that the cyclic peptide residues 283-297 of sialic acid-binding IgG-like lectin 9 (Siglec-9) "CARLSLSWRGLTLCPSK" bind to vascular adhesion protein 1 and hence makes the radioactive analogues of this compound ([ 68 Ga]Ga-DOTA-Siglec-9) interesting as a noninvasive visualizing marker of inflammation. Three different approaches to the radiosynthesis of [ 68 Ga]Ga-DOTA-Siglec-9 are presented and compared with previously published methods. A simple, robust radiosynthesis of [ 68 Ga]Ga-DOTA-Siglec-9 with a yield of 62% (non decay-corrected) was identified, and it had a radiochemical purity >98% and a specific radioactivity of 35 MBq/nmol. Furthermore, the protein binding and stability of [ 68 Ga]Ga-DOTA-Siglec-9 were analyzed in vitro in mouse, rat, rabbit, pig, and human plasma and compared with in vivo pig results. The plasma in vitro protein binding of [ 68 Ga]Ga-DOTA-Siglec-9 was the lowest in the pig followed by rabbit, human, rat, and mouse. It was considerably higher in the in vivo pig experiments. The in vivo stability in pigs was lower than the in vitro stability. Despite considerable species differences, the observed characteristics of [ 68 Ga]Ga-DOTA-Siglec-9 are suitable as a positron emission tomography tracer. Copyright © 2017 John Wiley & Sons, Ltd.

Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

Energy Technology Data Exchange (ETDEWEB)

Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2009-12-15

This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

International Nuclear Information System (INIS)

Wagener, Viera; Olivier, E.J.; Botha, J.R.

2009-01-01

This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

Stretched exponential profiles of photoluminescence decays related to localized states in InGaAsN/GaAs single-quantum wells

International Nuclear Information System (INIS)

Nakayama, M.; Iguchi, Y.; Nomura, K.; Hashimoto, J.; Yamada, T.; Takagishi, S.

2007-01-01

We have investigated photoluminescence (PL) dynamics related to localized states in In x Ga 1-x As 1-y N y /GaAs single-quantum wells (SQWs) with the constant In content of x=0.32 and various N contents of y=0,0.004,and0.008. In order to determine the intrinsic band-edge energy, we used photoreflectance (PR) spectroscopy that is sensitive to the optical transitions at critical points. From systematic measurements of the PL and PR spectra, it is demonstrated that the slight incorporation of nitrogen considerably disorders the band-edge states of the InGaAsN SQWs, resulting from formation of localized states, so-called band-tail states. We find that the PL-decay profile related to the localized states generally exhibits a stretched exponential behavior peculiar to a disordered system at low temperatures, which means that randomness of alloy potential fluctuations including nitrogen dominates the PL dynamics

The association of personal semantic memory to identity representations: insight into higher-order networks of autobiographical contents.

Science.gov (United States)

Grilli, Matthew D

2017-11-01

Identity representations are higher-order knowledge structures that organise autobiographical memories on the basis of personality and role-based themes of one's self-concept. In two experiments, the extent to which different types of personal semantic content are reflected in these higher-order networks of memories was investigated. Healthy, young adult participants generated identity representations that varied in remoteness of formation and verbally reflected on these themes in an open-ended narrative task. The narrative responses were scored for retrieval of episodic, experience-near personal semantic and experience-far (i.e., abstract) personal semantic contents. Results revealed that to reflect on remotely formed identity representations, experience-far personal semantic contents were retrieved more than experience-near personal semantic contents. In contrast, to reflect on recently formed identity representations, experience-near personal semantic contents were retrieved more than experience-far personal semantic contents. Although episodic memory contents were retrieved less than both personal semantic content types to reflect on remotely formed identity representations, this content type was retrieved at a similar frequency as experience-far personal semantic content to reflect on recently formed identity representations. These findings indicate that the association of personal semantic content to identity representations is robust and related to time since acquisition of these knowledge structures.

Optical and electronic properties of GaInNP alloys - a new material system for lattice matching to GaAs

International Nuclear Information System (INIS)

Buyanova, I.A.; Chen, W.M.; Tu, C.W.

2008-01-01

In this paper we review our recent results from optical characterization studies of GaInNP. We show that N incorporation in these alloys affects their structural and defect properties, as well as the electronic structure. The main structural changes include (i) increasing carrier localization due to strong compositional fluctuations, which is typical for all dilute nitrides, and (ii) N-induced long range ordering effects, specific for GaInNP. The observed degradation of radiative efficiency of the alloys upon increasing N content is attributed to formation of several defects acting as centres of efficient non-radiative recombination. One of the defects is identified as a complex involving a Ga interstitial atom. N incorporation is also found to change the band line up from the type I in the GaInP/GaAs structures to the type II in the GaInNP/GaAs heterojunctions with [N]>0.5%. For the range of N compositions studied ([N]≤2%), a conduction band offset at the GaInNP/GaAs interface is found to nearly linearly depend on [N] at -0.10 eV/%, whereas the valence band offset remains unaffected. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-capacity, high-strength trailer designs for the GA-4/GA-9 Casks

International Nuclear Information System (INIS)

Kissinger, J.A.; Rickard, N.D.; Taylor, C.; Zimmer, A.

1991-01-01

General Atomics (GA) is developing final designs for two dedicated legal-weight trailers to transport the GA-4 and GA-9 Spent-Fuel Casks. The basic designs for these high-capacity, high-strength trailers are essentially identical except for small modifications to account for the differences in cask geometry. We are designing both trailers to carry a 55,000 lb (24,900 kg) payload and to withstand a 2.5 g vertical design load. The GA-4 and GA-9 trailers are designed for significantly higher loads than are typical commercial semitrailers, which are designed to loads in the range of 1.7 to 2.0 g. To meet the federal gross vehicle weight limit for legal-weight trucks, GA has set a target design weight for the trailers of 9000 lb (4080 kg). This weight includes the personnel barrier, cask tiedowns, and impact limiter removal and storage system. Based on the preliminary trailer designs, the final design weight is expected to be very close to this target weight. 3 refs., 3 figs

High-capacity, high-strength trailer designs for the GA-4/GA-9 casks

International Nuclear Information System (INIS)

Rickard, N.D.; Kissinger, J.A.; Taylor, C.; Zimmer, A.

1991-01-01

General Atomics (GA) is developing final designs for two dedicated legal-weight trailers to transport the GA-4 and GA-9 Spent-Fuel Casks. The basic designs for these high-capacity, high-strength trailers are essentially identical except for small modifications to account for the differences in cask geometry. The authors are designing both trailers to carry a 55,000 lb (24,900 kg) payload and to withstand a 2.5 g vertical design load. The GA-4 and GA-9 trailers are designed for significantly higher loads than are typical commercial semitrailers, which are designed to loads in the range of 1.7 to 2.0 g. To meet the federal gross vehicle weight limit for legal-weight trucks, GA has set a target design weight for the trailers of 9000 lb (4080 kg). This weight includes the personnel barrier, cask tiedowns, and impact limiter removal and storage system. Based on the preliminary trailer designs, the final design weight will to be very close to this target weight

Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

International Nuclear Information System (INIS)

Capotondi, F.; Biasiol, G.; Ercolani, D.; Grillo, V.; Carlino, E.; Romanato, F.; Sorba, L.

2005-01-01

The relationship between structural and low-temperature transport properties is explored for In x Al 1 - x As/In x Ga 1 - x As metamorphic quantum wells with x > 0.7 grown on GaAs by molecular beam epitaxy. Different step-graded buffer layers are used to gradually adapt the in-plane lattice parameter from the GaAs towards the InGaAs value. We show that using buffer layers with a suitable maximum In content the residual compressive strain in the quantum well region can be strongly reduced. Samples with virtually no residual strain in the quantum well region show a low-temperature electron mobility up to 29 m 2 /V s while for samples with higher residual compressive strain the low-temperature mobility is reduced. Furthermore, for samples with buffers inducing a tensile strain in the quantum well region, deep grooves are observed on the surface, and in correspondence we notice a strong deterioration of the low-temperature transport properties

Influence of strain relaxation in axial {{In}}_{x}{{Ga}}_{1-x}{\\rm{N}}/{GaN} nanowire heterostructures on their electronic properties

Science.gov (United States)

Marquardt, Oliver; Krause, Thilo; Kaganer, Vladimir; Martín-Sánchez, Javier; Hanke, Michael; Brandt, Oliver

2017-05-01

We present a systematic theoretical study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial {{In}}x{{Ga}}1-x{{N}}/{GaN} nanowire (NW) heterostructures. Our simulations reveal that for a sufficiently large ratio between the thickness of the {{In}}x{{Ga}}1-x{{N}} disk and the diameter of the NW, the elastic relaxation leads to a significant reduction of the built-in electrostatic potential in comparison to a planar system of similar layer thickness and In content. In this case, the ground state transition energies approach constant values with increasing thickness of the disk and only depend on the In content, a behavior usually associated to that of a quantum well free of built-in electrostatic potentials. We show that the structures under consideration are by no means field-free, and the built-in potentials continue to play an important role even for ultrathin NWs. In particular, strain and the resulting polarization potentials induce complex confinement features of electrons and holes, which depend on the In content, shape, and dimensions of the heterostructure.

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

KAUST Repository

Alshehri, Bandar; Dogheche, Karim; Belahsene, Sofiane; Janjua, Bilal; Ramdane, Abderrahim; Patriarche, Gilles; Ng, Tien Khee; S-Ooi, Boon; Decoster, Didier; Dogheche, Elhadj

2016-01-01

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

KAUST Repository

Alshehri, Bandar

2016-06-07

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

Effect of Al substitution for Ga on the mechanical properties of directional solidified Fe-Ga alloys

Energy Technology Data Exchange (ETDEWEB)

Liu, Yangyang; Li, Jiheng; Gao, Xuexu, E-mail: gaox@skl.ustb.edu.cn

2017-02-01

Alloys of Fe{sub 82}Ga{sub 18−x}Al{sub x} (x=0, 4.5, 6, 9, 12, 13.5) were prepared by directional solidification technique and exhibited a <001> preferred orientation along the axis of alloy rods. The saturation magnetostriction value of the Fe{sub 82}Ga{sub 13.5}Al{sub 4.5} alloy was 247 ppm under no pre-stress. The tensile properties of alloys of Fe{sub 82}Ga{sub 18−x}Al{sub x} at room temperature were investigated. The results showed that tensile ductility of binary Fe-Ga alloy was significantly improved with Al addition. The fracture elongation of the Fe{sub 82}Ga{sub 18} alloy was only 1.3%, while that of the Fe{sub 82}Ga{sub 9}Al{sub 9} alloy increased up to 16.5%. Addition of Al increased the strength of grain boundary and cleavage, resulting in the enhancement of tensile ductility of the Fe-Ga-Al alloys. Analysis of deformation microstructure showed that a great number of deformation twins formed in the Fe-Ga-Al alloys, which were thought to be the source of serrated yielding in the stress-strain curves. The effect of Al content in the Fe-Ga-Al alloys on tensile ductility was also studied by the analysis of deformation twins. It indicated that the joint effect of slip and twinning was beneficial to obtain the best ductility in the Fe{sub 82}Ga{sub 9}Al{sub 9} alloy. - Highlights: • Tensile ductility of directional solidified Fe-Ga alloys was significantly improved with Al addition. • The fracture elongation of binary Fe{sub 82}Ga{sub 18} alloy was only 1.3% at room temperature. • The fracture elongation of Fe{sub 82}Ga{sub 9}Al{sub 9} alloy was 16.5% at room temperature. • A great number of deformation twins formed in the Fe-Ga-Al alloys during tensile tests at room temperature.

Investigating the electrical properties of Si donors in Al{sub x}Ga{sub 1-x}N alloys

Energy Technology Data Exchange (ETDEWEB)

James, G.R.; Leitch, A.W.R. [Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Omnes, F. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France)

2006-06-15

In this paper a study of the electrical properties of Si-doped Al{sub x}Ga{sub 1-x}N is presented. The Al{sub x}Ga{sub 1-x}N layers, grown using the metalorganic chemical vapour deposition technique, were studied using variable temperature Hall effect and persistent photoconductivity measurements. High quality conducting Al{sub x}Ga{sub 1-x}N layers were obtained for 0{<=}x{<=}0.5, with the mobility decreasing from 215 cm{sup 2}/V s (GaN) to 10 cm{sup 2}/V s (Al{sub 0.51}Ga{sub 0.49}N), at 300 K. The carrier concentration of these layers was typically between 2.5 x 10{sup 18} cm{sup -3} and 7 x 10{sup 17} cm{sup -3} at 300 K. For Al{sub x}Ga{sub 1-x}N layers with 0{<=}x{<=}0.41 the temperature dependence of the carrier concentration between 300 and 15 K could be studied, yielding the Si donor activation energy. The carrier concentrations of higher Al content samples (0.5{<=}x{<=}0.65) could not be accurately measured below 300 K, and thus the Si activation energy was obtained from the temperature dependence of the resistivity. It was found that the Si activation energy escalated with increasing Al content of the layers, and followed the trend predicted for a shallow hydrogen-like donor, up to x=0.65. Illumination of the samples at low temperature with a blue LED showed that the layers exhibit little persistent photoconductivity, further confirmation that Si remains a shallow donor in Al{sub x}Ga{sub 1-x}N. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED

KAUST Repository

Mishra, Pawan; Ng, Tien Khee; Janjua, Bilal; Shen, Chao; Eid, Jessica; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2014-01-01

We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ∼20 times higher injection levels (∼275 A/cm2) compared to a conventional step-MQWs microLED (∼14 A/cm2).

Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED

KAUST Repository

Mishra, Pawan

2014-12-01

We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ∼20 times higher injection levels (∼275 A/cm2) compared to a conventional step-MQWs microLED (∼14 A/cm2).

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

International Nuclear Information System (INIS)

López-Escalante, M.C.; Gabás, M.; García, I.; Barrigón, E.; Rey-Stolle, I.; Algora, C.; Palanco, S.; Ramos-Barrado, J.R.

2016-01-01

Graphical abstract: - Highlights: • GaAs, AlInP and GaInP epi-layers grown in a MOVPE facility. • GaAs/GaInP and GaAs/AlInP interfaces studied through the combination of angle resolved and depth profile X-ray photoelectros spectroscopies. • GaAs/GaInP interface shows no features appart from GaAs, GaInP and mixed GaInAs or GaInAsP phases. • GaAs/AlInP interface shows traces of an anomalous P environment, probably due to P-P clusters. - Abstract: GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar + sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface.

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Energy Technology Data Exchange (ETDEWEB)

López-Escalante, M.C., E-mail: mclopez@uma.es [Nanotech Unit, Laboratorio de Materiales y Superficies, Departamento de Ingeniería Química, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain); Gabás, M. [The Nanotech Unit, Depto. de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga Spain (Spain); García, I.; Barrigón, E.; Rey-Stolle, I.; Algora, C. [Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid Spain (Spain); Palanco, S.; Ramos-Barrado, J.R. [The Nanotech Unit, Depto. de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga Spain (Spain)

2016-01-01

Graphical abstract: - Highlights: • GaAs, AlInP and GaInP epi-layers grown in a MOVPE facility. • GaAs/GaInP and GaAs/AlInP interfaces studied through the combination of angle resolved and depth profile X-ray photoelectros spectroscopies. • GaAs/GaInP interface shows no features appart from GaAs, GaInP and mixed GaInAs or GaInAsP phases. • GaAs/AlInP interface shows traces of an anomalous P environment, probably due to P-P clusters. - Abstract: GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar{sup +} sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface.

Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

International Nuclear Information System (INIS)

Kirste, Lutz; Lim, Taek; Aidam, Rolf; Mueller, Stefan; Waltereit, Patrick; Ambacher, Oliver

2010-01-01

A high-resolution X-ray diffraction and X-ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al 2 O 3 and GaN/SiC templates is presented. A new AlN/GaN/AlN triple-interlayer is implemented to improve the interface properties between barrier layer and GaN buffer for a higher mobility of the polarization induced two-dimensional electron gas. Layer properties and structural parameters like concentration, interface quality, layer thickness, strain and crystalline perfection are analyzed. Best structural properties are achieved for an AlGaInN layer with AlN/GaN/AlN interlayer deposited on a GaN/4H-SiC (00.1) template. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Spin injection from epitaxial Heusler alloy thin films into InGaAs/GaAs quantum wells

DEFF Research Database (Denmark)

Damsgaard, Christian Danvad

2006-01-01

-stoichiometric crystals and crystals with site swapping defects. Significant decrease in the spin polarization has been predicted for disorder defects involving especially Co on Mn or Ga sites. From an estimate based on the calculated defect formation energies it is found that Mn on Co-sites are likely to exist...... no anisotropy is seen for near stoichiometry thin films on an ordinary GaAs surface. Typically thin films grown on GaAs show lower saturation magnetization than expected from bulk properties. The electrical characterizations have revealed resistivities around ρ = 350μΩcm at 300 K. Generally, the near...... to typically 0.02-0.1 Ωmm2 for Fe and Co contacts but two orders of magnitude higher for the Co2MnGa contacts. Point contact Andreev reflection measurements on an off-stoichiometric thin film (Co2.4Mn1.6Ga) show a spin polarization of P ≈ 50 %. Furthermore spin injection into a InGaAs/GaAs quantum well have...

Growth and characterization of InGaAs based nanowire-heterostructures

International Nuclear Information System (INIS)

Treu, Julian Pascal

2017-01-01

tunability covering the technologically relevant telecommunication wavelengths. However, given their high surface-to-volume ratio, nanowire structures are especially prone to detrimental surface states, deteriorating in particular radiative efficiencies. Probing surfacestate related Fermi level pinning via detailed photoluminescence spectroscopy, we evaluate the influence of Ga-content on band bending and dominant recombination mechanism by studying as-grown nanowires covered by native oxide in comparison with nanowires free of oxide after wet-chemical treatment. In conjunction with complementary X-ray photoelectron spectroscopy, we identify a cross-over between surface electron accumulation for In-rich InGaAs nanowires to electron depletion for a gallium content between ∼ 20-30%. For stable passivation of deteriorating surface states higher bandgap materials are applied in radial core-shell geometry. Exploiting low surface recombination velocity and existing doping proficiency of InAsP, we establish a hybrid process combining MBE grown InAs core structures surrounded by metal organic vapor deposited (MOCVD) InAsP layers. This directly induces an increase in emission intensity by up to two orders of magnitude that can be related to high interface quality, as further corroborated by detailed TEM analysis of cross-sectional lamella structures. By systematically tuning thickness and phosphorus content we tune core-emission energies via strain-induced peak shifts and elucidate detrimental effects of plastic relaxation upon too high lattice mismatch. Introducing fully latticematched InGaAs-InAlAs heterostructures, such undesired strain accumulation and accompanied defect formation can be avoided, reflected by the absence of any strain-induced spectral shifts in peak emission energy and confirmed by high-resolution X-ray reciprocal space maps (strain ε core < 0.1%). As entirely in-situ based MBE process, exposure to ambient conditions is no longer required, further enhancing

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111

Directory of Open Access Journals (Sweden)

J. Hennig

2015-07-01

Full Text Available We report on GaN based field-effect transistor (FET structures exhibiting sheet carrier densities of n = 2.9 1013 cm−2 for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally xIn = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the InxGa1−xN/GaN/AlN/Al0.87In0.13N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of ISD = 1300 mA/mm (560 mA/mm. In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

Science.gov (United States)

Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

2016-11-21

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

Science.gov (United States)

Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

2016-12-01

Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

Synthesis and properties of γ-Ga2O3-Al2O3 solid solutions

Science.gov (United States)

Afonasenko, T. N.; Leont'eva, N. N.; Talzi, V. P.; Smirnova, N. S.; Savel'eva, G. G.; Shilova, A. V.; Tsyrul'nikov, P. G.

2017-10-01

The textural and structural properties of mixed oxides Ga2O3-Al2O3, obtained via impregnating γ-Al2O3 with a solution of Ga(NO3)3 and subsequent heat treatment, are studied. According to the results from X-ray powder diffraction, gallium ions are incorporated into the structure of aluminum oxide to form a solid solution of spinel-type γ-Ga2O3-Al2O3 up to a Ga2O3 content of 50 wt % of the total weight of the sample, accompanied by a reduction in the specific surface area, volume, and average pore diameter. It is concluded that when the Ga2O3 content exceeds 50 wt %, the β-Ga2O3 phase is observed along with γ-Ga2O3-Al2O3 solid solution. 71Ga and 27Al NMR spectroscopy shows that gallium replaces aluminum atoms from the tetrahedral position to the octahedral coordination in the structure of γ-Ga2O3-Al2O3.

Simulation of I-V and C-V curves of metal/GaN/AlGaN/GaN heterostructures with trap-assisted tunnelling

International Nuclear Information System (INIS)

Racko, J.; Benko, P.; Grmanova, A.; Harmatha, L.; Breza, J.; Granzner, R.; Schwierz, F.

2013-01-01

The described trap-assisted tunnelling (TAT) model of the metal/GaN/Al_xGaN_1_-_x/GaN structure allows analyzing the effect of deep traps upon I-V and C-V characteristics. The negative charge with magnitude proportional to the molar concentration of aluminium gives rise to a barrier at the first heterojunction, which is higher than the Schottky barrier at the metal/GaN interface. On increasing the reverse bias Va the barrier at the first heterojunction is getting lower. The drop of this barrier causes an exponential increase of the reverse current. The current saturates, when the first heterojunction barrier is lower than the Schottky barrier. The effect of TAT can be observed also on varying the parameters of the band of traps. The shape of the simulated C-V curve is affected by changes in the charge on the second heterojunction. In principle it reflects the decrease of electron concentration in the quantum well on increasing the reverse bias V_a. The space charge region becomes wider and the electron concentration at the second heterojunction falls below the concentration of ionized deep trapping centres, which manifests itself as a noticeable drop in the capacitance of the metal/GaN/Al_xGaN_1_-_x/GaN structure. (authors)

Aluminium incorporation in AlxGa1-xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

International Nuclear Information System (INIS)

Redondo-Cubero, A.; Gago, R.; Gonzalez-Posada, F.; Kreissig, U.; Di Forte Poisson, M.-A.; Brana, A.F.; Munoz, E.

2008-01-01

The Al content in Al x Ga 1-x N/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1 0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis

Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate

Science.gov (United States)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, GaN-based yellow light-emitting diodes (LEDs) were homoepitaxially grown on free-standing (0001) GaN substrates by metal-organic chemical vapor deposition. X-ray diffraction (XRD), photoluminescence (PL), and electroluminescence (EL) measurements were conducted to investigate the structural, optical, and electrical properties of the yellow LED. The XRD measurement results showed that the InGaN/GaN multiple quantum wells (MQWs) in the LED structure have good periodicity because the distinct MQWs related higher order satellite peaks can be clearly observed from the profile of 2θ-ω XRD scan. The low temperature (10 K) and room temperature PL measurement results yield an internal quantum efficiency of 16% for the yellow LED. The EL spectra of the yellow LED present well Gaussian distribution with relatively low linewidth (47-55 nm), indicating the homogeneous In-content in the InGaN quantum well layers in the yellow LED structure. It is believed that this work will aid in the future development of GaN on GaN LEDs with long emission wavelength.

Investigation of Cu(In,Ga)Se{sub 2} using Monte Carlo and the cluster expansion technique

Energy Technology Data Exchange (ETDEWEB)

Ludwig, Christian D.R.; Gruhn, Thomas; Felser, Claudia [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg-University, Mainz (Germany); Windeln, Johannes [IBM Germany, Mgr. Technology Center ISC EMEA, Mainz (Germany)

2010-07-01

CIGS based solar cells are among the most promising thin-film techniques for cheap, yet efficient modules. They have been investigated for many years, but the full potential of CIGS cells has not yet been exhausted and many effects are not understood. For instance, the band gap of the absorber material Cu(In,Ga)Se{sub 2} varies with Ga content. The question why solar cells with high Ga content have low efficiencies, despite the fact that the band gap should have the optimum value, is still unanswered. We are using Monte Carlo simulations in combination with a cluster expansion to investigate the homogeneity of the In-Ga distribution as a possible cause of the low efficiency of cells with high Ga content. The cluster expansion is created by a fit to ab initio electronic structure energies. The results we found are crucial for the processing of solar cells, shed light on structural properties and give hints on how to significantly improve solar cell performance. Above the transition temperature from the separated to the mixed phase, we observe different sizes of the In and Ga domains for a given temperature. The In domains in the Ga-rich compound are smaller and less abundant than the Ga domains in the In-rich compound. This translates into the Ga-rich material being less homogeneous.

Synthesis and microstructural characterization of Sr- and Mg-substituted LaGaO3 solid electrolyte

International Nuclear Information System (INIS)

Datta, Pradyot; Majewski, Peter; Aldinger, Fritz

2007-01-01

Sr and Mg substituted LaGaO 3 is a solid electrolyte for intermediate temperature solid oxide fuel cell. Phase purity of this material is a concern for the researchers for a long time. In this contribution the secondary phases that are evolved during the synthesis of Sr and Mg doped LaGaO 3 are reported. For that purpose, a series of La 1-x Sr x Ga 1-y Mg y O 3-δ (LSGM) was prepared by solid state synthesis route. Scanning electron microscopic photographs showed secondary phases namely La 4 Ga 2 O 9 , LaSrGa 3 O 7 , LaSrGaO 4 along with the parent perovskite LSGM depending upon the amount of dopant. Amount of secondary phases was estimated from the peak positions of room temperature X-ray diffraction. It was observed that for a fixed amount of Mg dopant increasing the amount of Sr content also increased the amount of secondary phases whereas the reverse was found to be true when Sr content was fixed and Mg content was increased. This behaviour was attributed to the increase in solid solubility of Sr in presence of Mg

EFFECTS OF COLD STRATIFICATION AND GA3 ON GERMINATION OF ARBUTUS UNEDO SEEDS OF THREE PROVENANCES.

Science.gov (United States)

Pipinis, Elias; Stampoulidis, Athanasios; Milios, Elias; Kitikidou, Kyriaki; Radoglou, Kalliopi

2017-01-01

Arbutus unedo is a valuable Mediterranean shrub as an ornamental plant as well as fruit tree. Fresh fruits of A. unedo are a good source of antioxidants, of vitamins C, E and carotenoids and also are characterized by the high content of mineral elements. The effects of gibberellic acid (GA 3 ) and cold stratification (CS) on seed germination performance were investigated in A. unedo seeds collected from three provenances in the Northern part of Greece. Seeds of each provenance were soaked in solutions of GA 3 (500, 1000 or 2000 ppm) for 24 h and subsequently were subjected to CS at 3 - 5°C for 0, 1, 2, and 3 months. Non-stratified seeds of the three A. unedo provenances which were not treated with GA 3 solutions exhibited very low germination. However, seed germination was significantly improved after a one-month period of CS. Similarly, the non-stratified seeds of all three provenances became non-dormant after the treatment with 2000 ppm GA 3 and they germinated at high percentages. However, in untreated seeds with GA3, after a one-month CS period the seeds of the Pieria provenance exhibited higher germination percentage than that of Rodopi provenance seeds. Furthermore, in non-stratified seeds, the Pieria provenance seeds treated with GA3 germinated at higher percentages and more rapidly than those of the other two provenances. The results indicated that untreated seeds exhibited very low germination at 20/25°C. However, in all three provenances seed germinability was significantly improved by a one-month period of CS or treatment of seeds with 2000 ppm GA3. Furthermore, there was a considerable variability among seed provenances in response to the treatments which were applied.

Comparison of {sup 68}Ga-DOTATATE and {sup 68}Ga-DOTANOC PET/CT imaging in the same patient group with neuroendocrine tumours

Energy Technology Data Exchange (ETDEWEB)

Kabasakal, Levent [Istanbul University, Department of Nuclear Medicine, Cerrahpasa Medical Faculty, Istanbul (Turkey); Cerrahpasa Tip Fakultesi, Nukleer Tip Anabilim Dali, Aksaray, Istanbul (Turkey); Demirci, Emre; Uslu, Ilhami; Kanmaz, Bedii [Istanbul University, Department of Nuclear Medicine, Cerrahpasa Medical Faculty, Istanbul (Turkey); Ocak, Meltem; Araman, Ahmet; Ozsoy, Yildiz [Istanbul University, Department of Pharmaceutical Technology, Pharmacy Faculty, Istanbul (Turkey); Decristoforo, Clemens [Medical University of Innsbruck, Clinical Department of Nuclear Medicine, Innsbruck (Austria)

2012-08-15

Recent studies have suggested that positron emission tomography (PET) imaging with {sup 68}Ga-labelled DOTA-somatostatin analogues (SST) like octreotide and octreotate is useful in diagnosing neuroendocrine tumours (NETs) and has superior value over both CT and planar and single photon emission computed tomography (SPECT) somatostatin receptor scintigraphy (SRS). The aim of the present study was to evaluate the role of {sup 68}Ga-DOTA-1-NaI{sup 3}-octreotide ({sup 68}Ga-DOTANOC) in patients with SST receptor-expressing tumours and to compare the results of {sup 68}Ga-DOTA-D-Phe{sup 1}-Tyr{sup 3}-octreotate ({sup 68}Ga-DOTATATE) in the same patient population. Twenty SRS were included in the study. Patients' age (n = 20) ranged from 25 to 75 years (mean 55.4 {+-} 12.7 years). There were eight patients with well-differentiated neuroendocrine tumour (WDNET) grade1, eight patients with WDNET grade 2, one patient with poorly differentiated neuroendocrine carcinoma (PDNEC) grade 3 and one patient with mixed adenoneuroendocrine tumour (MANEC). All patients had two consecutive PET studies with {sup 68}Ga-DOTATATE and {sup 68}Ga-DOTANOC. All images were evaluated visually and maximum standardized uptake values (SUV{sub max}) were also calculated for quantitative evaluation. On visual evaluation both tracers produced equally excellent image quality and similar body distribution. The physiological uptake sites of pituitary and salivary glands showed higher uptake in {sup 68}Ga-DOTATATE images. Liver and spleen uptake values were evaluated as equal. Both {sup 68}Ga-DOTATATE and {sup 68}Ga-DOTANOC were negative in 6 (30 %) patients and positive in 14 (70 %) patients. In {sup 68}Ga-DOTANOC images only 116 of 130 (89 %) lesions could be defined and 14 lesions were missed because of lack of any uptake. SUV{sub max} values of lesions were significantly higher on {sup 68}Ga-DOTATATE images. Our study demonstrated that the images obtained by {sup 68}Ga-DOTATATE and {sup 68}Ga

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

Science.gov (United States)

Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

2018-05-01

We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

Efficiency Drop in Green InGaN /GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

Science.gov (United States)

Auf der Maur, Matthias; Pecchia, Alessandro; Penazzi, Gabriele; Rodrigues, Walter; Di Carlo, Aldo

2016-01-01

White light emitting diodes (LEDs) based on III-nitride InGaN /GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light conversion efficiencies, it has been recently pointed out that the full potential of solid state lighting could be exploited only by color mixing approaches without employing phosphor-based wavelength conversion. Such an approach requires direct emitting LEDs of different colors, including, in particular, the green-yellow range of the visible spectrum. This range, however, suffers from a systematic drop in efficiency, known as the "green gap," whose physical origin has not been understood completely so far. In this work, we show by atomistic simulations that a consistent part of the green gap in c -plane InGaN /GaN -based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing indium content due to random fluctuations of the indium concentration naturally present in any InGaN alloy.

(In)GaSb/AlGaSb quantum wells grown on Si substrates

International Nuclear Information System (INIS)

Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

2007-01-01

We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems. The measured ground state energy of each QW matched well with the theoretical value calculated by solving the Schroedinger equation for a finite potential QW. The temperature dependence of the PL intensity showed large activation energy (∼ 77.6 meV) from QW. The results indicated that the fabricated QW structure had a high crystalline quality, and the GaSb QW on Si for optical devices operating at temperatures higher than room temperature will be expected

Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

Science.gov (United States)

Monavarian, M.; Rashidi, A.; Aragon, A. A.; Oh, S. H.; Rishinaramangalam, A. K.; DenBaars, S. P.; Feezell, D.

2018-01-01

High-speed InGaN/GaN blue light-emitting diodes (LEDs) are needed for future gigabit-per-second visible-light communication systems. Large LED modulation bandwidths are typically achieved at high current densities, with reports close to 1 GHz bandwidth at current densities ranging from 5 to 10 kA/cm2. However, the internal quantum efficiency (IQE) of InGaN/GaN LEDs is quite low at high current densities due to the well-known efficiency droop phenomenon. Here, we show experimentally that nonpolar and semipolar orientations of GaN enable higher modulation bandwidths at low current densities where the IQE is expected to be higher and power dissipation is lower. We experimentally compare the modulation bandwidth vs. current density for LEDs on nonpolar (10 1 ¯ 0 ), semipolar (20 2 ¯ 1 ¯) , and polar (" separators="|0001 ) orientations. In agreement with wavefunction overlap considerations, the experimental results indicate a higher modulation bandwidth for the nonpolar and semipolar LEDs, especially at relatively low current densities. At 500 A/cm2, the nonpolar LED has a 3 dB bandwidth of ˜1 GHz, while the semipolar and polar LEDs exhibit bandwidths of 260 MHz and 75 MHz, respectively. A lower carrier density for a given current density is extracted from the RF measurements for the nonpolar and semipolar LEDs, consistent with the higher wavefunction overlaps in these orientations. At large current densities, the bandwidth of the polar LED approaches that of the nonpolar and semipolar LEDs due to coulomb screening of the polarization field. The results support using nonpolar and semipolar orientations to achieve high-speed LEDs at low current densities.

Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

Science.gov (United States)

Liang, Yu-Han

show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.

Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells

International Nuclear Information System (INIS)

Hsu, H P; Sitarek, P; Huang, Y S; Liu, P W; Lin, J M; Lin, H H; Tiong, K K

2006-01-01

The effects of growth interruption times combined with Sb exposure of GaAsSb/GaAs multiple quantum wells (MQWs) have been investigated by using phototransmittance (PT), contactless electroreflectance (CER) and wavelength modulated surface photovoltage spectroscopy (WMSPS). The features originated from different portions of the samples, including interband transitions of MQWs, interfaces and GaAs, are observed and identified through a detailed comparison of the obtained spectra and theoretical calculation. A red-shift of the interband transitions and a broader lineshape of the fundamental transition are observed from samples grown under Sb exposure compared to the reference sample grown without interruption. The results can be interpreted in terms of both increases in Sb content and mixing of Sb in the GaAs interface layers. An additional feature has been observed below the GaAs region in the samples with Sb treatment. The probable origin of this additional feature is discussed

Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

International Nuclear Information System (INIS)

Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A; Molina-Valdovinos, S; Melendez-Lira, M; Lopez-Lopez, M

2009-01-01

In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm -1 and 291 cm -1 , respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm -1 and 250 cm -1 are evidenced. Additional new peaks located around 650 and 690 cm -1 are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm -1 and 695.2 cm -1 , in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn) m As n localized structures.

Relationships among oil content, protein content and seed size in soybeans

Directory of Open Access Journals (Sweden)

Mario Marega Filho

2001-03-01

Full Text Available During 1995/96 and 1996/97, experiments were carried out at Londrina State University, aiming at quantifying the oil and protein contents in two groups of soybean genotypes; estimating the phenotypic, genotypic and environmental correlations existent among oil, protein content and seed size, and identifying genotypes for direct human consumption with high protein content. The evaluated characters were Weight of a Hundred Seeds (WHS, expressed in grams/100 seeds, Oil Content (OC and Protein Content (PC, expressed in %. In the experiment carried out in the field, OC ranged from 12 to 20.37 % and PC from 35.66 to 41.75% while in the experiment carried out in the greenhouse OC ranged from 12.26 to 21.79 % and PC from 32.95 to 41.56 % . The correlations between oil and protein were negative and significant. The relationship among WHS with OC and PC was low and higly affected by the time effect. Due to their high protein content and stability to oil and protein contents, there were distinction among the treatments carried out in the field (GA23 and GA20, and those carried out in the greenhouse (PI408251, Waseda, B6F4 (L-3 less, PI423909 and Tambagura.Durante 1995/96 e 1996/97, foram conduzidos experimentos na Universidade Estadual de Londrina, visando: quantificar os teores de óleo e proteína em dois grupos de genótipos de soja tipo alimento; estimar as correlações fenotípicas e genotípicas existentes entre os teores de óleo, proteína e tamanho das sementes; e, identificar genótipos para consumo humano de forma direta, com elevado teor de proteína. Foram avaliados os caracteres Peso de Cem Sementes (PCS, expresso em gramas / 100 sementes, Teor de Óleo (TO, e Teor de Proteína (TP, expressos em %. Na população conduzida a campo, a característica TO variou de 12 a 20,4 %, e TP de 35,7 a 41,8 %. A população conduzida em casa de vegetação apresentou uma variação de 12,3 a 21,8 % para TO, e de 33 a 41,6 % para TP. As correla

Exploring the Content of Instrumental Lessons and Gender Relations in Australian Higher Education

Science.gov (United States)

Zhukov, Katie

2008-01-01

This observational study analysed the lesson content of 24 instrumental lessons (piano, strings and winds) using a gender-balanced sample (equal numbers of male/female teachers and students) from five Australian higher education institutions to ascertain the priorities of topics in advanced applied music lessons in the Western Classical tradition.…

Effect of lead on nucleic acid and protein contents of rice (Oryza sativa L. ) seedlings and its interaction with IAA and GA/sub 3/ in different plant systems

Energy Technology Data Exchange (ETDEWEB)

Maitra, P.; Mukherh, S.

1979-09-01

Activity of lead acetate, (CH/sub 3/COO)/sub 2/Pb, 3 H/sub 2/O, was studied in germinating rice seedlings with respect to RNA, DNA and alkali soluble protein contents. RNA, DNA and protein contents greatly reduced both in embryo and endosperm with increasing concentrations of lead and with concomitant increase in amino acid content in embryo. When IAA was supplied in combination with lead acetate, variable amounts of relief of elongation inhibition of wheat coleoptile sections were noticed. With GA/sub 3/, however, lead-induced inhibition of either lettuce (Lactuca sativa L.) hypocotyl elongation or ..cap alpha..-amylase production in rice half seeds was largely overcome.

Optical characterization of In xGa1-xN alloys

International Nuclear Information System (INIS)

Gartner, M.; Kruse, C.; Modreanu, M.; Tausendfreund, A.; Roder, C.; Hommel, D.

2006-01-01

InGaN layers were grown by molecular beam epitaxy (MBE) either directly on (0 0 0 1) sapphire substrates or on GaN-template layers deposited by metal-organic vapor-phase epitaxy (MOVPE). We combined spectroscopic ellipsometry (SE), Raman spectroscopy (RS), photoluminescence (PL) and atomic force microscopy (AFM) measurements to investigate optical properties, microstructure, vibrational and mechanical properties of the InGaN/GaN/sapphire layers. The analysis of SE data was done using a parametric dielectric function model, established by in situ and ex situ measurements. A dielectric function database, optical band gap, the microstructure and the alloy composition of the layers were derived. The variation of the InGaN band gap with the In content (x) in the 0 g = 3.44-4.5x. The purity and the stability of the GaN and InGaN crystalline phase were investigated by RS

Relationship between binding activity of sup 67 Ga and low sulfated acid glycosaminoglycans

Energy Technology Data Exchange (ETDEWEB)

Ohkubo, Yasuhito; Tsukada, Fumitake; Kohno, Hiroyuki (Tohoku Coll. of Pharmacy, Sendai (Japan)); Kubodera, Akiko (Science Univ. of Tokyo (Japan). School of Pharmaceutical Sciences)

1989-01-01

Sulfate content of acid glycosaminoglycan (AGAG) extracted from granuloma which had been produced by turpentine oil was inversely proportional to the amount of {sub 67}Ga accumulation in the granuloma. Additionally, the lowest sulfation occurred in granuloma at a peak of inflammation when the uptake of {sub 67}Ga had reached a maximum. On the basis of electrophoretic pattern, sulfate content, and specific optical rotation, it was concluded that acid glycosaminoglycans obtained from granuloma are mainly composed of chondroitin sulfate-A, -B, and desulfated heparin, while haparan sulfate was a minor component. From in vitro assays, desulfated acid glycosaminoglycans, especially desulfated-heparin and desulfated-heparan sulfate, were found to have a high affinity to {sub 67}Ga. These results suggest that low- or de-sulfation of AGAG is related to the accumulation of {sub 67}Ga in inflammatory lesions such as granuloma. Moreover, these results suggest that {sub 67}Ga does not bind to glycosaminoglycans via sulfuric acid residues. (author).

Physiology and microbial community structure in soil at extreme water content

Czech Academy of Sciences Publication Activity Database

Uhlířová, Eva; Elhottová, Dana; Tříska, Jan; Šantrůčková, Hana

2005-01-01

Roč. 50, č. 2 (2005), s. 161-166 ISSN 0015-5632 R&D Projects: GA ČR(CZ) GA206/99/1410; GA ČR(CZ) GA526/99/P033 Institutional research plan: CEZ:AV0Z6066911 Keywords : microbial community structure * soils * extreme water content Subject RIV: EH - Ecology, Behaviour Impact factor: 0.918, year: 2005

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

International Nuclear Information System (INIS)

Ruppalt, Laura B.; Cleveland, Erin R.; Champlain, James G.; Prokes, Sharka M.; Brad Boos, J.; Park, Doewon; Bennett, Brian R.

2012-01-01

In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al 2 O 3 interfaces. Prior to atomic layer deposition of an Al 2 O 3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 °C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbO x , decreased Sb, and increased GaO x content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.

In Situ XRD Studies of ZnO/GaN Mixtures at High Pressure and High Temperature: Synthesis of Zn-Rich (Ga1-xZnx)(N1-xOx) Photocatalysts

Energy Technology Data Exchange (ETDEWEB)

Rodriguez, J.A.; Chen, H.; Wang, L.; Bai, J.; Hanson, J.C.; Warren, J.B.; Muckerman, J.T.; Fujita, E.

2010-02-04

The high-pressure, high-temperature conditions for the synthesis of Zn-rich (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions from mixtures of ZnO/GaN were explored using synchrotron-based in situ time-resolved X-ray diffraction (XRD). Following a new synthetic path, (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions with a Zn content up to 75% were prepared for the first time. The structures of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions were characterized by XRD and X-ray absorption fine structure (XAFS) analyses and were in excellent agreement with the predictions of density functional calculations. These materials adopt a wurtzite crystal structure with metal-N or metal-O bond distances in the range of 1.95-1.98 {angstrom}. Although the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions seem to be stable over the full range of compositions, no ideal solid solution formation was observed. In all cases, the lattice parameters were larger than those of ideal solid solutions. The variation of the lattice parameter c showed an upward double bowing curve, as was predicted by theoretical calculations. Also, no ideal behavior was observed in the electronic properties of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions. X-ray absorption spectra at the Zn and Ga K-edges of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) systems showed significant electronic perturbations with respect to ZnO and GaN. The synthesized (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solution with a Zn content of 50% displayed the ability to absorb visible light well above 500 nm. This material has a great potential for splitting water under visible light irradiation. The availability of (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions with a high Zn content opens the door to fully explore the application of these materials in photocatalysis.

In Situ XRD Studies of ZnO/GaN Mixtures at High Pressure and High Temperature: Synthesis of Zn-Rich (Ga1-xZnx)(N1-xOx) Photocatalysts

Energy Technology Data Exchange (ETDEWEB)

Chen, H.; Wang, L; Bai, J; Hanson, J; Warren, J; Muckerman, J; Fujita, E; Rodriguez, J

2010-01-01

The high-pressure, high-temperature conditions for the synthesis of Zn-rich (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions from mixtures of ZnO/GaN were explored using synchrotron-based in situ time-resolved X-ray diffraction (XRD). Following a new synthetic path, (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions with a Zn content up to {approx}75% were prepared for the first time. The structures of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions were characterized by XRD and X-ray absorption fine structure (XAFS) analyses and were in excellent agreement with the predictions of density functional calculations. These materials adopt a wurtzite crystal structure with metal-N or metal-O bond distances in the range of 1.95-1.98 {angstrom}. Although the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions seem to be stable over the full range of compositions, no ideal solid solution formation was observed. In all cases, the lattice parameters were larger than those of ideal solid solutions. The variation of the lattice parameter c showed an upward double bowing curve, as was predicted by theoretical calculations. Also, no ideal behavior was observed in the electronic properties of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions. X-ray absorption spectra at the Zn and Ga K-edges of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) systems showed significant electronic perturbations with respect to ZnO and GaN. The synthesized (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solution with a Zn content of 50% displayed the ability to absorb visible light well above 500 nm. This material has a great potential for splitting water under visible light irradiation. The availability of (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions with a high Zn content opens the door to fully explore the application of these materials in photocatalysis.

Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells

Science.gov (United States)

Kunrugsa, Maetee

2018-06-01

Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar cell are investigated. The solar cell is designed as a p-i-n GaAs structure where a single layer of GaAsSb QDs is introduced into the intrinsic region. The current density–voltage characteristics of QD solar cells are derived from Poisson’s equation, continuity equations, and the drift-diffusion transport equations, which are numerically solved by a finite element method. Furthermore, the transition energy of a single GaAsSb QD and its corresponding wavelength for each As mole fraction are calculated by a six-band k · p model to validate the position of the absorption edge in the external quantum efficiency curve. A GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4 provides the best power conversion efficiency. The overlap between electron and hole wave functions becomes larger as the As mole fraction increases, leading to a higher optical absorption probability which is confirmed by the enhanced photogeneration rates within and around the QDs. However, further increasing the As mole fraction results in a reduction in the efficiency because the absorption edge moves towards shorter wavelengths, lowering the short-circuit current density. The influences of the QD size and density on the efficiency are also examined. For the GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4, the efficiency can be improved to 26.2% by utilizing the optimum QD size and density. A decrease in the efficiency is observed at high QD densities, which is attributed to the increased carrier recombination and strain-modified band structures affecting the absorption edges.

Cu deficiency in multi-stage co-evaporated Cu(In,Ga)Se{sub 2} for solar cells applications: Microstructure and Ga in-depth alloying

Energy Technology Data Exchange (ETDEWEB)

Caballero, R., E-mail: raquel.caballero@helmholtz-berlin.de [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Izquierdo-Roca, V. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain); Fontane, X. [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain); Kaufmann, C.A. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Alvarez-Garcia, J. [Centre de Recerca i Investigacio de Catalunya (CRIC), Trav. de Gracia 108, 08012 Barcelona (Spain); Eicke, A. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung, Industriestrasse 6, 70565 Stuttgart (Germany); Calvo-Barrio, L. [Lab. Analisis de Superficies, SCT, Universitat de Barcelona, Lluis Sole i Sabaris 1-3, 08028 Barcelona (Spain); Perez-Rodriguez, A. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain)] [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain); Schock, H.W. [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Morante, J.R. [M-2E/XaRMAE/IN2UB, Departament d' Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona (Spain)] [IREC, Catalonia Institute for Energy Research, C. Joseph Pla 2 B2, 08019 Barcelona (Spain)

2010-05-15

The objective of this work is to study the influence of the maximum Cu content during the deposition of Cu(In,Ga)Se{sub 2} (CIGSe) by multi-stage co-evaporation on the phases present in the final film, the film structure and the electrical properties of resulting solar cell devices. The variation of the composition is controlled by the Cu content in stage 2 of the deposition process. The different phases are identified by Raman spectroscopy. The in-depth Ga gradient distribution is investigated by in-depth resolved Raman scattering and secondary neutral mass spectroscopy. The morphology of the devices is studied by scanning electron microscopy. Efficiencies of 9.2% are obtained for ordered-vacancy-compound-based cells with a Cu/(In + Ga) ratio = 0.35, showing the system's flexibility. This work supports the current growth model: a small amount of Cu excess during the absorber process is required to obtain a quality microstructure and high performance devices.

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

International Nuclear Information System (INIS)

Davies, M. J.; Hammersley, S.; Dawson, P.; Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.

2016-01-01

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

Energy Technology Data Exchange (ETDEWEB)

Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Hammersley, S.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2016-02-07

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

Does GaH5 exist?

Science.gov (United States)

Speakman, Lucas D.; Turney, Justin M.; Schaefer, Henry F.

2005-11-01

The existence or nonexistence of GaH5 has been widely discussed [N. M. Mitzel, Angew. Chem. Int. Ed. 42, 3856 (2003)]. Seven possible structures for gallium pentahydride have been systematically investigated using ab initio electronic structure theory. Structures and vibrational frequencies have been determined employing self-consistent field, coupled cluster including all single and double excitations (CCSD), and CCSD with perturbative triples levels of theory, with at least three correlation-consistent polarized-valence-(cc-pVXZ and aug-cc-pVXZ) type basis sets. The X˜A'1 state for GaH5 is predicted to be weakly bound complex 1 between gallane and molecular hydrogen, with Cs symmetry. The dissociation energy corresponding to GaH5→GaH3+H2 is predicted to be De=2.05kcalmol-1. The H-H stretching fundamental is predicted to be v =4060cm-1, compared to the tentatively assigned experimental feature of Wang and Andrews [J. Phys. Chem. A 107, 11371 (2003)] at 4087cm-1. A second Cs structure 2 with nearly equal energy is predicted to be a transition state, corresponding to a 90° rotation of the H2 bond. Thus the rotation of the hydrogen molecule is essentially free. However, hydrogen scrambling through the C2v structure 3 seems unlikely, as the activation barrier for scrambling is at least 30kcalmol-1 higher in energy than that for the dissociation of GaH5 to GaH3 and H2. Two additional structures consisting of GaH3 with a dihydrogen bond perpendicular to gallane (C3v structure 4) and an in-plane dihydrogen bond [Cs(III) structure 5] were also examined. A C3v symmetry second-order saddle point has nearly the same energy as the GaH3+H2 dissociation limit, while the Cs(III) structure 5 is a transition structure to the C3v structure. The C4v structure 6 and the D3h structure 7 are much higher in energy than GaH3+H2 by 88 and 103kcalmol-1, respectively.

High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

Energy Technology Data Exchange (ETDEWEB)

Sanz-Hervas, A.; Aguilar, M. [Madrid, Univ. (Spain). Dept. Tecnologia Electronica. E.T.S.I. Telecomunicacion; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J. [Valladolid, Real de Burgos Univ. (Spain). Dept. Teoria de la Senal u Comunicaciones e Ingegneria Telematica. E.T.S.I. Telecomunicacion; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E. [Madrid, Univ. (Spain). Dept. Ingegnieria Electronica. E.T.S.I. Telecomunicacion

1997-02-01

In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224{+-} reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies.

High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

International Nuclear Information System (INIS)

Sanz-Hervas, A.; Aguilar, M.; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J.; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E.

1997-01-01

In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224± reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

Science.gov (United States)

Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

2015-01-01

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

Ab initio-based bulk and surface thermodynamics of InGaN alloys. Investigating the effects of strain and surface polarity

Energy Technology Data Exchange (ETDEWEB)

Duff, Andrew I.; Lymperakis, Liverios; Neugebauer, Joerg [Max-Planck-Institut fuer Eisenforschung, Duesseldorf (Germany)

2015-05-15

The growth of high In content InGaN with sufficiently high crystal quality is challenging due to the differences in the GaN and InN thermodynamics. The surprisingly different thermodynamics is due to a complex competition between strain and chemistry and mediated by the different indium and gallium atomic radii as well as their different bonding enthalpies with nitrogen. In the present work, we investigate bulk and surface thermodynamics of molecular beam epitaxial (MBE) growth of In{sub x}Ga{sub 1-x}N for the technologically relevant (0001) and (000 anti 1) growth planes by means of density functional theory calculations. Our calculations confirm that coherent growth fully suppresses phase separation through spinodal decomposition. However, the biaxial strain is found to have a marginal effect on the critical temperatures for In{sub x}Ga{sub 1-x}N decomposition. Furthermore, the thermal stability of excess indium is found to be remarkably higher on N-polar surfaces than on the Ga-polar surfaces. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surface

Energy Technology Data Exchange (ETDEWEB)

Lee, Young-Bae; Naoi, Yoshiki; Sakai, Shiro [Department of Electrical and Electronic Engineering, University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506 (Japan); Takaki, Ryohei; Sato, Hisao [Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360 (Japan)

2003-11-01

We have studied a new method of increasing the extraction efficiency of a GaN-based light-emitting diode (LED) using a plasma surface treatment. In this method, prior to the evaporation of a semitransparent p-metal, the surface of a p-GaN located beneath a p-pad is selectively exposed to a nitrogen plasma in a reactive ion etching (RIE) chamber. The electrical characteristics of the plasma treated p-GaN remarkably changes its resistivity into semi-insulator without any parasitic damage. Since the LEDs with a new method have no light absorption in a p-pad region, a higher optical power can be extracted compared to a conventional LEDs without plasma selective treatment on the p-GaN surface. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin; Ng, G. I. [NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

2015-01-14

To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

International Nuclear Information System (INIS)

Ravikiran, L.; Radhakrishnan, K.; Yiding, Lin; Ng, G. I.; Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S.

2015-01-01

To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10 13  cm −2 ) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm 2 /V.s and a sheet carrier concentration (n s ) of 0.97 × 10 13  cm −2 for the DH-HEMT structure, while they are 1310 cm 2 /V.s and 1.09 × 10 13  cm −2 , respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure

Somatostatin receptor PET in neuroendocrine tumours: 68Ga-DOTA0,Tyr3-octreotide versus 68Ga-DOTA0-lanreotide

International Nuclear Information System (INIS)

Putzer, Daniel; Kroiss, Alexander; Waitz, Dietmar; Gabriel, Michael; Uprimny, Christian; Guggenberg, Elisabeth von; Decristoforo, Clemens; Warwitz, Boris; Virgolini, Irene Johanna; Traub-Weidinger, Tatjana; Widmann, Gerlig

2013-01-01

The aim of this study was to evaluate the impact of 68 Ga-labelled DOTA 0 -lanreotide ( 68 Ga-DOTA-LAN) on the diagnostic assessment of neuroendocrine tumour (NET) patients with low to moderate uptake on planar somatostatin receptor (SSTR) scintigraphy or 68 Ga-labelled DOTA 0 ,Tyr 3 -octreotide ( 68 Ga-DOTA-TOC) positron emission tomography (PET). Fifty-three patients with histologically confirmed NET and clinical signs of progressive disease, who had not qualified for peptide receptor radionuclide therapy (PRRT) on planar SSTR scintigraphy or 68 Ga-DOTA-TOC PET (n = 38) due to lack of tracer uptake, underwent 68 Ga-DOTA-LAN PET to evaluate a treatment option with 90 Y-labelled lanreotide according to the MAURITIUS trial. The included patients received 150 ± 30 MBq of each radiopharmaceutical intravenously. PET scans were acquired 60-90 min after intravenous bolus injection. Image results from both PET scans were compared head to head, focusing on the intensity of tracer uptake in terms of treatment decision. CT was used for morphologic correlation of tumour lesions. To further evaluate the binding affinities of each tracer, quantitative and qualitative values were calculated for target lesions. 68 Ga-DOTA-LAN and 68 Ga-DOTA-TOC both showed equivalent findings in 24/38 patients when fused PET/CT images were interpreted. The sensitivity, specificity and accuracy of 68 Ga-DOTA-LAN in comparison to CT were 0.63, 0.5 and 0.62 (n = 53; p 68 Ga-DOTA-TOC in comparison to CT 0.78, 0.5 and 0.76 (n = 38; p 68 Ga-DOTA-TOC showed a significantly higher maximum standardized uptake value (SUV max ) regarding the primary tumour in 25 patients (p 68 Ga-DOTA-LAN. Corresponding values of both PET scans for tumour and liver did not show any significant correlation. 68 Ga-DOTA-TOC revealed more tumour sites than 68 Ga-DOTA-LAN (106 vs 53). The tumour to background ratios for tumour and liver calculated from SUV max measurements were significantly higher for 68 Ga-DOTA-TOC than 68 Ga

Optical characterization of In xGa 1- xN alloys

Science.gov (United States)

Gartner, M.; Kruse, C.; Modreanu, M.; Tausendfreund, A.; Roder, C.; Hommel, D.

2006-10-01

InGaN layers were grown by molecular beam epitaxy (MBE) either directly on (0 0 0 1) sapphire substrates or on GaN-template layers deposited by metal-organic vapor-phase epitaxy (MOVPE). We combined spectroscopic ellipsometry (SE), Raman spectroscopy (RS), photoluminescence (PL) and atomic force microscopy (AFM) measurements to investigate optical properties, microstructure, vibrational and mechanical properties of the InGaN/GaN/sapphire layers. The analysis of SE data was done using a parametric dielectric function model, established by in situ and ex situ measurements. A dielectric function database, optical band gap, the microstructure and the alloy composition of the layers were derived. The variation of the InGaN band gap with the In content ( x) in the 0 < x ≤ 0.14 range was found to follow the linear law Eg = 3.44-4.5 x. The purity and the stability of the GaN and InGaN crystalline phase were investigated by RS.

Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate

KAUST Repository

Shen, Chao

2014-01-01

Segmented contact method was utilized to measure the gain and absorption spectra at below and above threshold for 420nm m-plane InGaN/GaN laser diode with a comparatively higher peak modal gain of 29.2 cm-1.

Generated carrier dynamics in V-pit enhanced InGaN/GaN light emitting diode

KAUST Repository

Ajia, Idris A.

2017-12-18

We investigate the effects of V-pits on the optical properties of a state-of-the art highly efficient, blue InGaN/GaN multi-quantum-well (MQW) light emitting diode (LED) with high internal quantum efficiency (IQE) of > 80%. The LED is structurally enhanced by incorporating pre-MQW InGaN strain-relief layer with low InN content and patterned sapphire substrate. For comparison, a conventional (unenhanced) InGaN/GaN MQW LED (with IQE of 46%) grown under similar conditions was subjected to the same measurements. Scanning transmission electron microscopy (STEM) reveals the absence of V-pits in the unenhanced LED, whereas in the enhanced LED, V-pits with {10-11} facets, emerging from threading dislocations (TDs) were prominent. Cathodoluminescence mapping reveals the luminescence properties near the V-pits, showing that the formation of V-pit defects can encourage the growth of defect-neutralizing barriers around TD defect states. The diminished contribution of TDs in the MQWs allows indium-rich localization sites to act as efficient recombination centers. Photoluminescence and time-resolved spectroscopy measurements suggest that the V-pits play a significant role in the generated carrier rate and droop mechanism, showing that the quantum confined Stark effect is suppressed at low generated carrier density, after which the carrier dynamics and droop are governed by the carrier overflow effect.

Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

Energy Technology Data Exchange (ETDEWEB)

Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

2011-07-01

Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

Science.gov (United States)

Golovynskyi, S.; Datsenko, O.; Seravalli, L.; Kozak, O.; Trevisi, G.; Frigeri, P.; Babichuk, I. S.; Golovynska, I.; Qu, Junle

2017-12-01

Deep levels in metamorphic InAs/In x Ga1-x As quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/GaAs QDs investigated previously by the same techniques. We have found that for a low content of indium (x = 0.15) the trap density in the plane of self-assembled QDs is comparable or less than the one for InGaAs/GaAs QDs. However, the trap density increases with x, resulting in a rise of the defect photoresponse in PC and TSC spectra as well as a reduction of the QD PL intensity. The activation energies of the deep levels and some traps correspond to known defect complexes EL2, EL6, EL7, EL9, and EL10 inherent in GaAs, and three traps are attributed to the extended defects, located in InGaAs embedding layers. The rest of them have been found as concentrated mainly close to QDs, as their density in the deeper InGaAs buffers is much lower. This an important result for the development of light-emitting and light-sensitive devices based on metamorphic InAs QDs, as it is a strong indication that the defect density is not higher than in pseudomorphic InAs QDs.

Fabrication and magnetic investigations of highly uniform CoNiGa alloy nanowires

Energy Technology Data Exchange (ETDEWEB)

Li, Wen-Jing; Khan, U.; Irfan, Muhammad [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China); Javed, K. [Department of Physics, Forman Christian College, Lahore 5400 (Pakistan); Liu, P. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China); School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021 (China); Ban, S.L. [School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021 (China); Han, X.F., E-mail: xfhan@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China)

2017-06-15

Highlights: • Highly ordered CoNiGa alloy nanowires with different compositions were fabricated by DC electrodeposition. • The magnetic properties of CoNiGa nanowires can be easily tailored by varying its components. • Magnetostatic interactions plays an important role in the magnetization reversal process. • A linear dependence of coercivity on temperature was found for Co{sub 55}Ni{sub 28}Ga{sub 17} samples. - Abstract: CoNiGa ternary alloy nanowire arrays were successfully fabricated by simple DC electrodeposition into the anodized aluminum oxide (AAO) templates. A systematic study of the potential and components of the electrolyte were conducted to obtain different components of CoNiGa nanowires. The largest Ga content in the prepared alloy nanowires was about 17%, while for Co and Ni contents which can be controlled in a wide range by adjusting the composition and pH value of the electrolyte appropriately. X-ray diffraction analysis confirmed that the as-grown CoNiGa nanowire arrays were polycrystal with fcc phase of Co where Co atoms partially substituted by Ni and Ga. Magnetization curves of samples with different composition were measured at room temperature as well as low temperature. The results showed that the components of the alloy nanowires have a great impact on its magnetic properties. For Co{sub 55}Ni{sub 28}Ga{sub 17} nanowires, the magnetization reversal mode changes from curling mode to coherent rotation as the angle increases, and the temperature dependence of coercivity can be well described by the thermal activation effect.

Shear deformation and relaxed lattice constant of (Ga,Mn)As layers on GaAs(113)A

Energy Technology Data Exchange (ETDEWEB)

Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany)

2008-07-01

The shear deformation and the relaxed lattice constant of compressively strained (Ga,Mn)As layers with Mn concentrations of up to 5%, pseudomorphically grown on GaAs(113)A and GaAs(001) substrates by low-temperature molecular-beam epitaxy, have been studied by high resolution X-ray diffraction (HRXRD) measurements. Rocking curves reveal a triclinic distortion of the (113)A layers with a shear direction towards the [001] crystallographic axis, whereas the (001) layers are tetragonally distorted along [001]. The relaxed lattice constants were derived from {omega}-2{theta} scans for the symmetric (113) and (004) Bragg reflections, taking the elastic anisotropy of the cubic system into account. The increase of the lattice constant with Mn content has been found to be smaller for the (113)A layers than for the (001) layers, presumably due to the enhanced amount of excess As in the (113)A layers.

Gallium adsorption on (0001) GaN surfaces

International Nuclear Information System (INIS)

Adelmann, Christoph; Brault, Julien; Mula, Guido; Daudin, Bruno; Lymperakis, Liverios; Neugebauer, Joerg

2003-01-01

We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. Based on the experimental results we find that for substrate temperatures and Ga fluxes typically used in molecular-beam epitaxy of GaN, finite equilibrium Ga surface coverages can be obtained. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. In particular, we show that a large range of Ga fluxes exists, where 2.5±0.2 monolayers (in terms of the GaN surface site density) of Ga are adsorbed on the GaN surface. We further demonstrate that the structure of this adsorbed Ga film is in good agreement with the laterally contracted Ga bilayer model predicted to be most stable for strongly Ga-rich surfaces [Northrup et al., Phys. Rev. B 61, 9932 (2000)]. For lower Ga fluxes, a discontinuous transition to Ga monolayer equilibrium coverage is found, followed by a continuous decrease towards zero coverage; for higher Ga fluxes, Ga droplet formation is found, similar to what has been observed during Ga-rich GaN growth. The boundary fluxes limiting the region of 2.5 monolayers equilibrium Ga adsorption have been measured as a function of the GaN substrate temperature giving rise to a Ga/GaN adsorption phase diagram. The temperature dependence is discussed within an ab initio based growth model for adsorption taking into account the nucleation of Ga clusters. This model consistently explains recent contradictory results of the activation energy describing the critical Ga flux for the onset of Ga droplet formation during Ga-rich GaN growth [Heying et al., J. Appl. Phys. 88, 1855 (2000); Adelmann et al., J. Appl. Phys. 91, 9638 (2002).

Ti on GaAs(110)

International Nuclear Information System (INIS)

McCants, C.E.; Kendelewicz, T.; Williams, M.D.; List, R.S.; Lindau, I.; Spicer, W.E.

1985-01-01

The chemical and electronic properties of the Ti:GaAs interface have been studied using soft x-ray and ultraviolet photoemission spectroscopies. The Fermi level pinning position is observed to be 0.7 eV for n-type, consistent with both the Unified Defect Model and the charge transfer effects observed by Williams et. al. The interface is quite disrupted, as evidenced by shifts in both the Ga and As 3d core levels and marked changes in their lineshapes. The Ga core level moves to higher kinetic energy and shifts to a metallic-like state with increasing Ti coverages. The As core level also shifts to higher KE; in addition, as appears to diffuse through the Ti overlayer for thin (<10 monolayers) coverage. This, in addition to a change in the intensity ratio between the As 3d/sub 5/2/ and 3d/sub 3/2/ peaks suggests the formation of a Ti-arsenide, which is predicted by bulk thermodynamics. The room temperature data imply a laminar coverage, although annealing studies suggest the possibility of cluster formation with increasing temperature (0<10 monolayers). These results are also consistent with those obtained by Waldrop et. al. for Ti:GaAs(100) interfaces

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Science.gov (United States)

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis

2015-03-01

Reduced electric field in semipolar (1122) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar (1122) GaN grown by metal-organic chemical vapor deposition on planar m-plane sapphire substrates. Indium content in the semipolar material was compared with that in polar c-plane samples grown under the same conditions simultaneously side by side on the same holder. The investigated samples incorporated dual GaN/InGaN/GaN double heterostructures with 3nm wide wells. In order to improve optical quality, both polar and semipolar templates were grown using an in-situ epitaxial lateral overgrowth (ELO) technique. Indium incorporation efficiency was derived from the comparison of PL spectra measured on the semipolar and polar structures at the highest excitation density, which allowed us to minimize the effect of quantum confined Stark effect on the emission wavelength. Our data suggests increased indium content in the semipolar material by up to 3.0%, from 15% In in c- GaN to 18% In in (1122) GaN.

Ceramide content is higher in type I compared to type II fibers in obesity and type 2 diabetes mellitus

DEFF Research Database (Denmark)

Kristensen, Ditte Bech; Prats Gavalda, Clara; Larsen, Steen

2012-01-01

This study investigated fiber-type-specific muscle ceramide content in obese subjects and type 2 diabetes patients. Two substudies, one which compared type 2 diabetes patients to both lean- and obese BMI-matched subjects and the other study which compared lean body-matched post-obese, obese......, and control subjects, were performed. A fasting blood sample was obtained and plasma insulin and glucose determined. A muscle biopsy was obtained from deltoideus and vastus lateralis, and fiber-type ceramide content was determined by fluorescence immunohistochemistry. Insulin sensitivity estimated by Quicki...... index was higher in lean compared to type 2 diabetes patients and obese controls. Also in control and post-obese subjects, a higher insulin sensitivity was observed compared to obese subjects. Ceramide content was consistently higher in type I than in type II muscle fibers and higher in deltoideus than...

Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy

International Nuclear Information System (INIS)

Gong, Z.; Niu, Z.C.; Huang, S.S.; Fang, Z.D.; Sun, B.Q.; Xia, J.B.

2005-01-01

GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time. The observed morphologic evolution of Ga droplets during annealing does not support the hypothesis that As atoms preferentially react with Ga around the periphery of the droplets, but somehow relates to a dewetting process similar to that of unstable films. Photoluminescene (PL) test results confirm the quantum-confinement effect of these GaAs nanorings. Using similar methods, we have fabricated InGaAs/GaAs lattice-mismatched rings

Luminescent properties of Y{sub 3}Al{sub 5−x}Ga{sub x}O{sub 12}:Ce crystals

Energy Technology Data Exchange (ETDEWEB)

Zorenko, Yu., E-mail: zorenko@ukw.edu.pl [Institute of Physics, Kazimierz Wielki University in Bydgoszcz, Powstańców Wielkopolskich No 2, 85-090 Bydgoszcz (Poland); Zorenko, T. [Institute of Physics, Kazimierz Wielki University in Bydgoszcz, Powstańców Wielkopolskich No 2, 85-090 Bydgoszcz (Poland); Department of Electronics, Ivan Franko National University of Lviv, Gen. Tarnavskyj str. 107, 70017 Lviv (Ukraine); Malinowski, P. [Institute of Physics, Kazimierz Wielki University in Bydgoszcz, Powstańców Wielkopolskich No 2, 85-090 Bydgoszcz (Poland); Sidletskiy, O.; Neicheva, S. [Institute for Scintillation Materials, National Academy of Sciences of Ukraine, Lenina pr. 60, 61001 Kharkiv (Ukraine)

2014-12-15

Absorption, luminescent and scintillation properties of Ce{sup 3+} doped Y{sub 3}Al{sub 5−x}Ga{sub x}O{sub 12} crystals with Ga content in the x=1–5 range were investigated in this work and compared with the properties of YAG:Ce crystals. Apart from the traditional spectral methods (absorption, cathodoluminescence and light yield measurements), the intrinsic and Ce{sup 3+} related luminescence of Y{sub 3}Al{sub 5−x}Ga{sub x}O{sub 12}:Ce solid-solution were also investigated using the luminescent spectroscopy under excitation by synchrotron radiation in the 3.7–25 eV range. We show that the optical properties Y{sub 3}Al{sub 5−x}Ga{sub x}O{sub 12}:Ce garnets monotonically change with increasing the Ga content in the x=0–3 range due to preferable localization of Ga ions in the tetrahedral position of the garnet lattice. At the highest Ga concentration (x>3) the deviation of the optical properties of Y{sub 3}Al{sub 5−x}Ga{sub x}O{sub 12}:Ce garnets is observed from the respective properties of these crystals with Ga content in the x=0–3 range due to occupation by Ga ions of the octahedral position in the garnet host. - Highlights: • Different dependence of optical properties of Y{sub 3}Al{sub 5−x}Ga{sub x}O{sub 12}:Ce crystals on Ga content in x=0–3 and 3–5 ranges. • Elimination of the luminescence of Y{sub Al} antisite defects in Y{sub 3}Al{sub 5−x}Ga{sub x}O{sub 12}:Ce crystals at x>2. • Significant improvement of the scintillation properties of Y{sub 3}Al{sub 5−x}Ga{sub x}O{sub 12}:Ce crystals at x=2 and 3 in comparison with YAG:Ce.

Transmission electron microscopy of defects and internal fields in GaN structures

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, H

2001-07-01

The main aim of this study was to understand the microstructure of GaN and InGaN/GaN and to examine electric fields around the defects, and across the quantum wells by electron holography. For this reason different types of GaN and InGaN/GaN samples have been prepared and studied. Conventional transmission electron microscopy has been used for structural study of two MBE grown GaN/GaAs samples, grown at room temperature and at 340 deg C. The structure of the samples were found to be hexagonal polycrystalline in an amorphous GaN matrix, and textured hexagonal polycrystalline material respectively. The experimental results indicate that the higher growth temperature results in a more crystalline material with a higher density of bigger grain sizes. Different types of undoped and Si doped GaN/Sapphire samples were studied, with respect to the defect structure in GaN films. GaN was found to be a highly defective material with a dislocation density of 10{sup 9}/cm{sup 2}. The majority of the dislocations are edge dislocations. It has been found that nanopipes are open core screw dislocations, and the population and size of the nanopipes is proportional to the Si doping concentration. Dislocation structures were found to depend on the Si doping level in the material, with higher Si doping giving a lower density of dislocations with a more random distribution. In addition some EELS, EDX and HRTEM have been performed on the nanopipes and dislocations in order to investigate Si segregation in the defects. In MBE grown GaN/In{sub 0.1}Ga{sub 0.9}N/GaN SQWs and MQWs, V shaped defects were found to be present in the InGaN regions, which locally reduced the width of the InGaN layers. (author)

Transmission electron microscopy of defects and internal fields in GaN structures

International Nuclear Information System (INIS)

Mokhtari, H.

2001-07-01

The main aim of this study was to understand the microstructure of GaN and InGaN/GaN and to examine electric fields around the defects, and across the quantum wells by electron holography. For this reason different types of GaN and InGaN/GaN samples have been prepared and studied. Conventional transmission electron microscopy has been used for structural study of two MBE grown GaN/GaAs samples, grown at room temperature and at 340 deg C. The structure of the samples were found to be hexagonal polycrystalline in an amorphous GaN matrix, and textured hexagonal polycrystalline material respectively. The experimental results indicate that the higher growth temperature results in a more crystalline material with a higher density of bigger grain sizes. Different types of undoped and Si doped GaN/Sapphire samples were studied, with respect to the defect structure in GaN films. GaN was found to be a highly defective material with a dislocation density of 10 9 /cm 2 . The majority of the dislocations are edge dislocations. It has been found that nanopipes are open core screw dislocations, and the population and size of the nanopipes is proportional to the Si doping concentration. Dislocation structures were found to depend on the Si doping level in the material, with higher Si doping giving a lower density of dislocations with a more random distribution. In addition some EELS, EDX and HRTEM have been performed on the nanopipes and dislocations in order to investigate Si segregation in the defects. In MBE grown GaN/In 0.1 Ga 0.9 N/GaN SQWs and MQWs, V shaped defects were found to be present in the InGaN regions, which locally reduced the width of the InGaN layers. (author)

Effect of Dy addition on mechanical and magnetic properties of Mn-rich Ni–Mn–Ga ferromagnetic shape memory alloys

International Nuclear Information System (INIS)

Gao, L.; Dong, G.F.; Gao, Z.Y.; Cai, W.

2012-01-01

Highlights: ► The Dy addition significantly improves the compressive properties of Ni–Mn–Ga alloy. ► The mechanism of the improved mechanical properties by adding Dy is discussed. ► Dy doping results in a change of the fracture type of Ni–Mn–Ga alloy. ► Curie temperature almost remained unchanged at low Dy content and then decreases. - Abstract: The effects of partial substitution of rare earth Dy for Ga on the mechanical and magnetic properties of Mn-rich Ni 50 Mn 29 Ga 21−x Dy x (0 ≤ x ≤ 5) ferromagnetic shape memory alloys were investigated in detail. The results show that an appropriate amount of Dy addition significantly improves the mechanical properties of Ni–Mn–Ga alloy. With an increase in Dy content, the compressive strength enhances rapidly at first and then becomes stable when the Dy content is more than 1 at.%. However, the compressive strain increases dramatically and reaches a maximum value with 1 at.% Dy addition. Further increase in Dy content makes the compressive strain of the alloys decrease gradually. The mechanism of the improved mechanical properties is also discussed. Moreover, Dy doping changes the fracture type from intergranular fracture of Ni–Mn–Ga alloy to transgranular cleavage fracture of Ni–Mn–Ga–Dy alloys. The Curie temperature remains almost unchanged at low Dy content and subsequently decreases.

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

Science.gov (United States)

Perl, E. E.; Kuciauskas, D.; Simon, J.; Friedman, D. J.; Steiner, M. A.

2017-12-01

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 °C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 °C, we measure VOC that is ˜50 mV higher for the GaAs solar cell and ˜60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-type GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 °C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 °C to 400 °C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4× reduction in the effective lifetime and ˜40× increase in the surface recombination velocity as the temperature is increased from 25 °C to 400 °C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 °C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.

Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems

International Nuclear Information System (INIS)

Shen, J; Cha, J J; Song, Y; Lee, M L

2014-01-01

InGaAs quantum dots (QDs) on GaP are promising for monolithic integration of optoelectronics with Si technology. To understand and improve the optical properties of InGaAs/GaP QD systems, detailed measurements of the QD atomic structure as well as the spatial distributions of each element at high resolution are crucial. This is because the QD band structure, band alignment, and optical properties are determined by the atomic structure and elemental composition. Here, we directly measure the inhomogeneous distributions of In and As in InGaAs QDs grown on GaAs and GaP substrates at the nanoscale using energy dispersive x-ray spectral mapping in a scanning transmission electron microscope. We find that the In distribution is broader on GaP than on GaAs, and as a result, the QDs appear to be In-poor using a GaP matrix. Our findings challenge some of the assumptions made for the concentrations and distributions of In within InGaAs/GaAs or InGaAs/GaP QD systems and provide detailed structural and elemental information to modify the current band structure understanding. In particular, the findings of In deficiency and inhomogeneous distribution in InGaAs/GaP QD systems help to explain photoluminescence spectral differences between InGaAs/GaAs and InGaAs/GaP QD systems. (paper)

Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

Energy Technology Data Exchange (ETDEWEB)

Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A [Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia, Sede Manizales, A.A. 127 (Colombia); Molina-Valdovinos, S; Melendez-Lira, M [Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Av. IPN No. 2508, Apartado Postal 14-740, 07000 Mexico D.F (Mexico); Lopez-Lopez, M, E-mail: aopulzaram@unal.edu.c [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Apartado Postal 1-1010, Queretaro 76000 (Mexico)

2009-05-01

In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm{sup -1} and 291 cm{sup -1}, respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm{sup -1} and 250 cm{sup -1} are evidenced. Additional new peaks located around 650 and 690 cm {sup -1} are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm{sup -1} and 695.2 cm{sup -1}, in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn){sub m}As{sub n} localized structures.

Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

KAUST Repository

Al-Jabr, Ahmad

2016-04-28

We increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing process investigated, we achieved lasing at 638 nm in conjunction with reduction in the lasing threshold current by close to 500 mA in a moderately intermixed laser. Lasing in orange color, as well as spontaneous emission in the yellow and green color regime, were also achieved by extending the annealing conditions. The significance of the current work became apparent when one considers that achieving these tunable wavelengths by increasing the Al content in quantum wells during epitaxy growth leads to severe lattice-mismatch and poor material quality. Hence, our Al "drive-in" intermixing process is a viable approach for forming Al-rich InAlGaP quantum well, which is essential for realizing efficient optoelectronic devices in the "green-yellow-orange gap". © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Toward the understanding of annealing effects on (GaIn)2O3 films

International Nuclear Information System (INIS)

Zhang, Fabi; Jan, Hideki; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Nagaoka, Takashi; Arita, Makoto; Guo, Qixin

2015-01-01

(GaIn) 2 O 3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N 2 , vacuum, Ar, O 2 ) and temperatures (700–1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O 2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn) 2 O 3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O 2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface. - Highlights: • (GaIn) 2 O 3 films have been annealed in different gas ambient and temperature. • Only oxygen ambient can crystallize (GaIn) 2 O 3 film. • Film annealed at 800 °C appears best crystal quality. • High quality films were obtained with wide indium content varying from 0.2 to 0.7

Schottky contacts to polar and nonpolar n-type GaN

Energy Technology Data Exchange (ETDEWEB)

Kim, Hogyoung [Hanbat National University, Daejeon (Korea, Republic of); Phark, Soohyon [Max-Planck-Institut fur Mikrostrukturphysik, Halle (Germany); Song, Keunman [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of); Kim, Dongwook [Ewha Woman' s University, Seoul (Korea, Republic of)

2012-01-15

Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

International Nuclear Information System (INIS)

Yang, W. C.; Wu, C. H.; Tseng, Y. T.; Chiu, S. Y.; Cheng, K. Y.

2015-01-01

The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation

GaN/AlGaN-based UV photodetectors with performances exceeding the PMTS

OpenAIRE

Tut, Turgut

2008-01-01

Ankara : The Department of Physics and the Institute of Engineering and Science of Bilkent University, 2008. Thesis (Ph.D.) -- Bilkent University, 2008. Includes bibliographical references leaves 73-80. The recent developments in high Al-content AlxGa1−xN material growth technology made it possible to fabricate high performance solar-blind photodetectors operating in the ultraviolet (UV) spectral region with improved receiver sensitivity, low noise, low dark current density,...

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

International Nuclear Information System (INIS)

Kim, Sukwon; Kim, Tae Geun

2015-01-01

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga_2O_3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10"−"3 Ω-cm"2 with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga_2O_3 targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10"−"3 Ω-cm"2 contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

High-Sensitivity GaN Microchemical Sensors

Science.gov (United States)

Son, Kyung-ah; Yang, Baohua; Liao, Anna; Moon, Jeongsun; Prokopuk, Nicholas

2009-01-01

Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

Somatostatin receptor PET in neuroendocrine tumours: 68Ga-DOTA0,Tyr3-octreotide versus 68Ga-DOTA0-lanreotide.

Science.gov (United States)

Putzer, Daniel; Kroiss, Alexander; Waitz, Dietmar; Gabriel, Michael; Traub-Weidinger, Tatjana; Uprimny, Christian; von Guggenberg, Elisabeth; Decristoforo, Clemens; Warwitz, Boris; Widmann, Gerlig; Virgolini, Irene Johanna

2013-02-01

The aim of this study was to evaluate the impact of (68)Ga-labelled DOTA(0)-lanreotide ((68)Ga-DOTA-LAN) on the diagnostic assessment of neuroendocrine tumour (NET) patients with low to moderate uptake on planar somatostatin receptor (SSTR) scintigraphy or (68)Ga-labelled DOTA(0),Tyr(3)-octreotide ((68)Ga-DOTA-TOC) positron emission tomography (PET). Fifty-three patients with histologically confirmed NET and clinical signs of progressive disease, who had not qualified for peptide receptor radionuclide therapy (PRRT) on planar SSTR scintigraphy or (68)Ga-DOTA-TOC PET (n = 38) due to lack of tracer uptake, underwent (68)Ga-DOTA-LAN PET to evaluate a treatment option with (90)Y-labelled lanreotide according to the MAURITIUS trial. The included patients received 150 ± 30 MBq of each radiopharmaceutical intravenously. PET scans were acquired 60-90 min after intravenous bolus injection. Image results from both PET scans were compared head to head, focusing on the intensity of tracer uptake in terms of treatment decision. CT was used for morphologic correlation of tumour lesions. To further evaluate the binding affinities of each tracer, quantitative and qualitative values were calculated for target lesions. (68)Ga-DOTA-LAN and (68)Ga-DOTA-TOC both showed equivalent findings in 24/38 patients when fused PET/CT images were interpreted. The sensitivity, specificity and accuracy of (68)Ga-DOTA-LAN in comparison to CT were 0.63, 0.5 and 0.62 (n = 53; p < 0.0001) and for (68)Ga-DOTA-TOC in comparison to CT 0.78, 0.5 and 0.76 (n = 38; p < 0.013), respectively. (68)Ga-DOTA-TOC showed a significantly higher maximum standardized uptake value (SUV(max)) regarding the primary tumour in 25 patients (p < 0.003) and regarding the liver in 30 patients (p < 0.009) compared to (68)Ga-DOTA-LAN. Corresponding values of both PET scans for tumour and liver did not show any significant correlation. (68)Ga-DOTA-TOC revealed more tumour sites than (68)Ga

Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction

Science.gov (United States)

Abbasian, Sobhan; Sabbaghi-Nadooshan, Reza

2018-03-01

The operation of hetero In0.49Ga0.51P-Al0.7Ga0.3As tunnel diodes has been evaluated, and an approach for optimizing the back surface field (BSF) layer of a InGaP/GaAs dual-junction (DJ) solar cell developed. The results show that the hetero In0.49Ga0.51P-Al0.7Ga0.3As tunnel diode transferred more electrons and holes and showed less recombination between the top and bottom cells with increased efficiency (η) in the InGaP/GaAs DJ solar cell. To achieve higher open-circuit voltage (V oc), GaAs semiconductor was investigated to match with Al0.52In0.48P with bandgap of 2.4 eV, and replacement of the bottom cell in the InGaP/GaAs DJ solar cell with such an Al0.52In0.48P-GaAs heterojunction increased the photogeneration in this region. In the next step, addition of a BSF layer to the top cell required two BSF layers in the bottom cell to optimize the short-circuit current (J sc) and η. The thickness and doping of the BSF layers were increased to obtain the highest η for the cell. The proposed structure was then compared with previous works. The proposed structure yielded V oc = 2.46 V, J sc = 30 mA/cm2, fill factor (FF) = 88.61%, and η = 65.51% under AM1.5 (1 sun) illumination.

Evolution of phase transformation and magnetic properties with Fe content in Ni55-x Fe x Mn20Ga25 Heusler alloys

Science.gov (United States)

Zhang, Yuanlei; Li, Zhe; He, Xijia; Huang, Yinsheng; Xu, Kun; Jing, Chao

2018-02-01

A series of Ni55-x Fe x Mn20Ga25 (0  ⩽  x  ⩽  5) Heusler alloys was prepared to investigate their phase transitions and magnetic properties. At room temperature, these alloys present various crystal structures, and the unit cell volume enlarges with increase of Fe content in both austenite and martensite. Multiple magneto-structural transformations were observed in the parent alloy (x  =  0). In the process of cooling, it undergoes martensitic transformation (MT) from L21-type paramagnetic austenite to L10-type ferromagnetic martensite, accompanying an intermartensitic transformation (IMT, 7M  →  L10). By establishing a detailed phase diagram, we found that both MT and IMT shift to lower temperature simultaneously, while the ferromagnetic (FM) transition of austenite moves to higher temperature as Fe increases. With the further increase of Fe content beyond a critical value, both the IMT and the FM transitions split off from MT, and the former follows with the transforming sequence of 7M  →  5M. Based on the experimental data, some key magnetic parameters have been obtained in this system. The calculated magnetocrystalline anisotropy constant ({{K}1} ) of martensite quickly increases as Fe increases, and then it almost reaches a saturated value (~5.5  ×  105 J m-3) for the alloys with x  >  3. However, the spontaneous magnetic moment ({μs} ) attains a peak value of about 4.2 μ B/f.u. in the alloy with x  =  4, which is not consistent with the linear increasing of effective magnetic moment ({μef f} ). Further magnetic measurements with hydrostatic pressure indicate that such a discrepancy could be ascribed to the competition between the magnetic exchange interaction and the volume change of unit cell governed by the dopant Fe content.

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

Science.gov (United States)

Chen, Ying; Emanetoglu, Nuri William; Saraf, Gaurav; Wu, Pan; Lu, Yicheng; Parekh, Aniruddh; Merai, Vinod; Udovich, Eric; Lu, Dong; Lee, Dong S; Armour, Eric A; Pophristic, Milan

2005-07-01

Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

Co-conversion of Ethane and Methanol into Higher Hydrocarbons over Ga/H-ZSM-5, Mo/H-ZSM-5 and Ga-Mo/H-ZSM-5

DEFF Research Database (Denmark)

Mentzel, Uffe Vie; Rovik, Anne; Christensen, Claus H.

2009-01-01

Ethane and methanol are converted simultaneously over Ga/H-ZSM-5, Mo/H-ZSM-5 and Ga-Mo/H-ZSM-5 to produce light olefins and aromatics. The presence of methanol in the reactant stream is intended to facilitate activation of ethane following literature reports on co-conversion of methane and methan...... and in the carbonaceous compounds deposited on the catalysts. This indicates that both reactants take part in the formation of the hydrocarbon pool, which is the origin of all products....

Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios

International Nuclear Information System (INIS)

Khan, Aurangzeb; Yamaguchi, Masafumi; Takamoto, Tatsuya

2004-01-01

A study of the performance of single-junction InGaP/GaAs and dual-junction InGaP/GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (J P ) and valley current (J V ) densities should be greater than the short-circuit current density (J sc ) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (J P ) and valley current density (J V ) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP/GaAs tandem solar cell can be enhanced even under low concentration ratios

Polarization-engineered GaN/InGaN/GaN tunnel diodes

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

2010-01-01

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Site preference and phase stability of Ti doping Ni–Mn–Ga shape memory alloys from first-principles calculations

International Nuclear Information System (INIS)

Gao, Zhiyong; Chen, Baishu; Meng, Xianglong; Cai, Wei

2013-01-01

Highlights: •Site preference and phase stability of NiMnGaTi are studied by first-principles. •The Ti atoms prefer to occupy the Ga sites in the Ni 2 MnGa austenitic phase. •The phase stability becomes worse when Ga is replaced by Ti. •The phase stability is discussed based on the densities of states. -- Abstract: The effects of Ti content on martensitic transformation and phase stability of Ni 50 Mn 25 Ga 25−x Ti x shape memory alloys were investigated from first-principles calculations based on density functional theory. The formation energy results indicate that the added Ti preferentially occupies the Ga sites in Ni 2 MnGa alloy due to the lowest formation energy. The total energy difference between austenite and martensite increases with Ti alloying, being relevant to the experimentally reported changes in martensitic transformation temperature. The phase stability of Ni 50 Mn 25 Ga 25−x Ti x austenite decreases with increasing Ti content, which results from the reduced Ni 3d–Mn 3d hybridization when Ga is replaced by Ti

Structure and optical properties of GaSe-CdSe composites driven by Cd intercalation in GaSe lamellar crystals

International Nuclear Information System (INIS)

Caraman, Iuliana; Kantser, Valeriu; Evtodiev, Igor; Untila, Dumitru; Dmitroglo, Liliana; Leontie, Liviu; Arzumanyan, Grigory

2015-01-01

A new composite material composed of GaSe and CdSe has been obtained by treatment of GaSe single-crystal lamellas in Cd vapors at temperatures of 773-853 K and intercalation of Cd interlayers. The structure and optical properties of the GaSe-CdSe composite material have been studied. The content of CdSe crystallites was found to grow with increasing treatment temperature or with increasing duration of treatment at a constant temperature. Analysis of XRD, PL, XPS, AFM, and Raman patterns has shown that the heterogeneous composite composed of micro and nanocrystallites of CdSe in GaSe can be obtained by Cd intercalation in a temperature range of 753-853 K. On the basis of Raman spectrum, the vibrational modes of the composite have been identified. The PL of these materials contains emission bands of free and bound excitons, donor-acceptor bands, and bands of recombination via impurity levels. The PL emission spectra measured at a temperature of 78 and 300 K for the composites result from the overlapping of the emission bands of the components of GaSe doped with Cd and the CdSe crystallites. (authors)

Czech Higher Education Still at the Crossroads

Czech Academy of Sciences Publication Activity Database

Matějů, Petr; Simonová, Natalie

Roč.39, č. 3 (2003), s. 393-410 ISSN 0038-0288 R&D Projects: GA AV ČR(CZ) IBS7028302; GA ČR(CZ) GA403/03/0340 Institutional research plan: CEZ:AV0Z7028912 Keywords : higher education * legislation * autonomy of universities Subject RIV: AO - Sociology, Demography Impact factor: 0.063, year: 2003

Automated synthesis, characterization and biological evaluation of [{sup 68}Ga]Ga-AMBA, and the synthesis and characterization of {sup nat}Ga-AMBA and [{sup 67}Ga]Ga-AMBA

Energy Technology Data Exchange (ETDEWEB)

Cagnolini, Aldo; Chen Jianqing; Ramos, Kimberly; Marie Skedzielewski, Tina; Lantry, Laura E.; Nunn, Adrian D.; Swenson, Rolf E. [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States); Linder, Karen E., E-mail: karen.e.linder@gmail.co [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States)

2010-12-15

Ga-AMBA (Ga-DO3A-CH{sub 2}CO-G-[4-aminobenzoyl]-QWAVGHLM-NH{sub 2}) is a bombesin-like agonist with high affinity for gastrin releasing peptide receptors (GRP-R). Syntheses for {sup nat}Ga-AMBA, [{sup 67}Ga]Ga-AMBA and [{sup 68}Ga]Ga-AMBA were developed. The preparation of HPLC-purified and Sep-Pak purified [{sup 68}Ga]Ga-AMBA were fully automated, using the built-in radiodetector of the Tracerlab FX F-N synthesizer to monitor fractionated {sup 68}Ge/{sup 68}Ga generator elution and purification. The total synthesis time, including the fractional elution of the generator, was 20 min for Sep-Pak purified material and 40 min for HPLC-purified [{sup 68}Ga]Ga-AMBA. Both [{sup 67}Ga]Ga-AMBA and [{sup 177}Lu]Lu-AMBA showed comparable high affinity for GRP-R in the human prostate cancer cell line PC-3 in vitro (k{sub D}=0.46{+-}0.07; 0.44{+-}0.08 nM), high internalization (78; 77%) and low efflux from cells at 2 h (2.4{+-}0.7; 2.9{+-}1.8%). Biodistribution results in PC-3 tumor-bearing male nude mice showed comparable uptake for [{sup 177}Lu]Lu-, [{sup 111}In]In-, [{sup 67}Ga]Ga- and [{sup 68}Ga]Ga-AMBA.

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

Science.gov (United States)

Chang, Tzu-Hsuan; Xiong, Kanglin; Park, Sung Hyun; Yuan, Ge; Ma, Zhenqiang; Han, Jung

2017-07-25

Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO 2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

Evaluation and comparison of Ga-68 DOTA-TATE and Ga-68 DOTA-NOC PET/CT imaging in well-differentiated thyroid cancer.

Science.gov (United States)

Ocak, Meltem; Demirci, Emre; Kabasakal, Levent; Aygun, Aslan; Tutar, Rumeysa O; Araman, Ahmet; Kanmaz, Bedii

2013-11-01

Somatostatin receptor (Sstr) scintigraphy with radiolabelled somatostatin analogues has been used extensively for the diagnosis and therapy of Sstr-expressing tumours. It has been shown that well-differentiated thyroid cancer (WDTC) cells have a high expression of Sstr2, Sstr3 and Sstr5. Hence, WDTC cells could be an ideal target for the evaluation of lesion uptake of Ga-68 DOTA-1-NaI3-octreotide (DOTA-NOC), which has a high affinity not only to Sstr2 but also to Sstr3 and Sstr5. The aim of the present study was to evaluate the value of Ga-68 DOTA-NOC as a target for Sstr2-expressing, Sstr3-expressing and Sstr5-expressing tumours in WDTC patients and to compare the results with those of Ga-68 DOTA-TATE in the same patient population. Thirteen patients with WDTC were included in our study: nine with papillary thyroid cancer, three with Hurthle cell carcinoma and one with follicular thyroid carcinoma. All patients had elevated serum thyroglobulin levels and negative post-therapeutic I-131 whole-body scans, which were obtained after the last radioiodine treatment. All patients had undergone two consecutive PET imaging studies with Ga-68 DOTA-D-Phe1-Tyr3-octreotate (DOTA-TATE) and Ga-68 DOTA-NOC, respectively. All images were evaluated visually, and maximum standardized uptake values were calculated. Both Ga-68 DOTA-TATE and Ga-68 DOTA-NOC PET images gave comparable results. Among the 13 patients, imaging with both Ga-68 DOTA-TATE and Ga-68 DOTA-NOC gave negative results in five (38%) patients and positive results in eight (62%) patients. A total of 45 lesions were identified on Ga-68 DOTA-TATE images and 42 on Ga-68 DOTA-NOC images; three lesions were missed. Lesion uptake was significantly higher on Ga-68 DOTA-TATE images. Maximum standardized uptake values of Ga-68 DOTA-TATE and Ga-68 DOTA-NOC were 12.9±9.1 and 6.3±4.1 (n=54, PDOTA-TATE has a higher lesion uptake even in WDTC patients and may have potential advantage over Ga-68 DOTA-NOC.

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission

International Nuclear Information System (INIS)

Liang, Y Y; Yoon, S F; Loke, W K; Ngo, C Y; Fitzgerald, E A

2012-01-01

GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is promising to integrate the InAs/InGaAs/GaAs QDs on Si with the use of germanium-on-insulator-on-silicon (GeOI) substrates, reported results exhibit bimodal QD sizes and double emission peaks, i.e. unsatisfactory for realistic applications. In this paper, we showed that with an optimized GaAs buffer, single-peak 1.33 µm room-temperature emission can be obtained from InAs/InGaAs/GaAs QDs on GeOI substrates. (paper)

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

Science.gov (United States)

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

Translocation of labelled assimilates, ion uptake and nucleic acids contents in zea mays plants as influenced by application of the herbicide dual and the bioregulaators GA3 and kinetin

International Nuclear Information System (INIS)

Hassanein, R.AA.; Khodary, S.E.A.; Abdel-Aziz, S.M.

2001-01-01

Maize seedlings, grown hydroponic for one month, were undertaken o investigate the effect of dual (metolachlor), bio regulators (GA 3 and kinetin) and their interaction with dual on translocation rate of assimilates, nucleic acids content. ion uptake and the activities of protease and nitrate reductase enzymes. Dual at all concentrations decreased the rate of assimilates translocation and nucleic acids levels. Also reduction in the ability of the treated plants to absorb ions from the growth medium as well as the activities of nitrate reductase and protease enzymes were retarded upon dual application. The results also revealed that treatment with either GA 3 or kinetin in combination with dual, reversed the adverse action of the herbicide on zea mays plants

Soybean seeds expressing feedback-insensitive cystathionine γ-synthase exhibit a higher content of methionine.

Science.gov (United States)

Song, Shikui; Hou, Wensheng; Godo, Itamar; Wu, Cunxiang; Yu, Yang; Matityahu, Ifat; Hacham, Yael; Sun, Shi; Han, Tianfu; Amir, Rachel

2013-04-01

Soybean seeds provide an excellent source of protein for human and livestock nutrition. However, their nutritional quality is hampered by a low concentration of the essential sulfur amino acid, methionine (Met). In order to study factors that regulate Met synthesis in soybean seeds, this study used the Met-insensitive form of Arabidopsis cystathionine γ-synthase (AtD-CGS), which is the first committed enzyme of Met biosynthesis. This gene was expressed under the control of a seed-specific promoter, legumin B4, and used to transform the soybean cultivar Zigongdongdou (ZD). In three transgenic lines that exhibited the highest expression level of AtD-CGS, the level of soluble Met increased significantly in developing green seeds (3.8-7-fold). These seeds also showed high levels of other amino acids. This phenomenon was more prominent in two transgenic lines, ZD24 and ZD91. The total Met content, which including Met incorporated into proteins, significantly increased in the mature dry seeds of these two transgenic lines by 1.8- and 2.3-fold, respectively. This elevation was accompanied by a higher content of other protein-incorporated amino acids, which led to significantly higher total protein content in the seeds of these two lines. However, in a third transgenic line, ZD01, the level of total Met and the level of other amino acids did not increase significantly in the mature dry seeds. This line also showed no significant change in protein levels. This suggests a positive connection between high Met content and the synthesis of other amino acids that enable the synthesis of more seed proteins.

Higher spins and matter interacting in dimension three

Czech Academy of Sciences Publication Activity Database

Kessel, P.; Lucena Gómez, Gustavo; Skvortsov, E.; Taronna, M.

2015-01-01

Roč. 2015, č. 11 (2015), s. 104 ISSN 1029-8479 R&D Projects: GA ČR(CZ) GA14-31689S Institutional support: RVO:68378271 Keywords : Higher Spin Gravity * Higher Spin Symmetry * AdS-CFT correspondence * Chern-Simons Theories Subject RIV: BD - Theory of Information Impact factor: 6.023, year: 2015

Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Koo, Sang-Mo; Kang, Min-Seok

2014-01-01

Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV th = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10 7 A/cm 2 ) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10 7 A/cm 2 ). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration

Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

Energy Technology Data Exchange (ETDEWEB)

Koo, Sang-Mo, E-mail: smkoo@kw.ac.kr; Kang, Min-Seok, E-mail: hyde0220@gmail.com

2014-10-15

Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV{sub th} = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10{sup 7} A/cm{sup 2}) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10{sup 7} A/cm{sup 2}). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration.

Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

International Nuclear Information System (INIS)

Ridgway, M.C.; Everett, S.E.; Glover, C.J.; Kluth, S.M.; Kluth, P.; Johannessen, B.; Hussain, Z.S.; Llewellyn, D.J.; Foran, G.J.; Azevedo, G. de M.

2006-01-01

We have compared the atomic-scale structure of ion irradiated GaN to that of amorphised GaP and GaAs. While continuous and homogenous amorphised layers were easily achieved in GaP and GaAs, ion irradiation of GaN yielded both structural and chemical inhomogeneities. Transmission electron microscopy revealed GaN crystallites and N 2 bubbles were interspersed within an amorphous GaN matrix. The crystallite orientation was random relative to the unirradiated epitaxial structure, suggesting their formation was irradiation-induced, while the crystallite fraction was approximately constant for all ion fluences beyond the amorphisation threshold, consistent with a balance between amorphisation and recrystallisation processes. Extended X-ray absorption fine structure measurements at the Ga K-edge showed short-range order was retained in the amorphous phase for all three binary compounds. For ion irradiated GaN, the stoichiometric imbalance due to N 2 bubble formation was not accommodated by Ga-Ga bonding in the amorphous phase or precipitation of metallic Ga but instead by a greater reduction in Ga coordination number

LEAN-GREEN MANUFACTURING: COLLABORATIVE CONTENT AND LANGUAGE INTEGRATED LEARNING IN HIGHER EDUCATION AND ENGINEERING COURSES

Directory of Open Access Journals (Sweden)

MARCELO RUDOLFO CALVETE GASPAR

2017-09-01

Full Text Available Lean and Green manufacturing processes aim at achieving lower material and labour costs, while reducing impacts on the environment, and promoting sustainability as a whole. This paper reports on a pilot experiment with higher education and engineering students, exploring the full potential of a collaborative approach on courses integrating the Portuguese Polytechnic of Castelo Branco engineering studies curricula, while simultaneously improving their proficiency in English. Content and Language Integrated Learning (CLIL has become a key area of curricular innovation since it is known for improving both language and content teacher and student motivation. In this context, instructional design for CLIL entailed tandem work of content (engineering and language (English teacher to design learning sequences and strategies. This allowed students to improve not only their language skills in English but also their knowledge in the specific engineering domain content on green and lean manufacturing processes.

Renal Localization of 67Ga Citrate in Noninfectious Nephritis

International Nuclear Information System (INIS)

Lee, Kang Wook; Jeong, Min Soo; Rhee, Sunn Kgoo; Kim, Sam Yong; Shin, Young Tai; Ro, Heung Kyu

1992-01-01

67 Ga citrate scan has been requested for detection or follow-up of inflammatory or neoplastic disease. Visualization of 67 Ga citrate in the kidneys at 48 and 72 hr post injection is usually interpreted as evidence of renal pathology. But precise mechanisms of abnormal 67 Ga uptake in kidneys were unknown. We undertook a study to determine the clinical value of 67 Ga citrate imaging of the kidneys in 68 patients with primary or secondary nephropathy confirmed by renal biopsy and 66 control patients without renal disease. Renal uptake in 48 to 72 hr images was graded as follows: Grade 0=background activity;1=faint uptake greater than background; 2=definite uptake, but less than lumbar vertebrae;3 same uptake as lumbar vertebrae, but less than liver; 4=same or higher uptake than liver. The results were as follows. 1) 42 of 68(62%) patients with noninfectious nephritis showed grade 2 or higher 67 Ga renal uptake but only 10 percent of control patients showed similar uptake. 2) In 14 patients with systemic lupus erythematosus, 8 of 9 (89%) patients with lupus nephritis exhibited marked renal uptake. 3) 36 of 41 patients (88%) with combined nephrotic syndrome showed Grade 2 or higher renal uptake. 4) Renal 67 Ga uptake was correlated with clinical severity of nephrotic syndrome determined by serum albumin level, 24 hr urine protein excretion and serum lipid levels. 5) After complete remission of nephrotic syndrome, renal uptake in all 8 patients who were initially Grade 3 or 4, decreased to Grade 1 or 0. In conclusion, we think that the mechanism of renal 67 Ga uptake in nephrotic syndrome might be related to the pathogenesis of nephrotic syndrome. In systemic lupus erythematosus, 67 Ga citrate scan is useful in predicting renal involvement.

The Formation and Characterization of GaN Hexagonal Pyramids

Science.gov (United States)

Zhang, Shi-Ying; Xiu, Xiang-Qian; Lin, Zeng-Qin; Hua, Xue-Mei; Xie, Zi-Li; Zhang, Rong; Zheng, You-Dou

2013-05-01

GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {101¯1¯} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.

Use of the AlGaAs native oxide in AlGaAs-GaAs quantum well heterostructure laser devices

International Nuclear Information System (INIS)

Ries, M.J.; Chen, E.I.; Holonyak, Chen N. Jr.

1995-01-01

At atmospheric conditions high Al Composition Al x Ga 1-x As (x ≥0.7) in Al x Ga 1-x As-GaAs heterostructures is subject to failure via hydrolyzation. In contrast, open-quotes wetclose quotes oxidation at higher temperatures (≥400 degrees C) produces stable AlGaAs native oxides that prove to be useful in quantum well heterostructure devices. The open-quotes wetclose quotes oxidation process results in the conversion of high Al composition heterostructure material into a stable low refractive index, current-blocking native oxide, which can be used to define cavities and current paths. The oxidation can be used to passivate exposed Al-bearing surfaces. Its selective, anisotropic nature is also useful for the fabrication of both planar and non-planar devices, including buried-oxide heterostructures. The III-V native oxide has been used in the fabrication of single-stripe and stripe array lasers, ring lasers, coupled-cavity lasers, buried-oxide verticle cavity lasers, deep-oxide waveguides, deep-oxide lasers, and high reliability LED's. Also, the native oxide of A1As has been demonstrated in field effect transistor operation. The use of the III-V native oxide in various device applications is described

Structure and phase stability of a Pu-0.32 wt% Ga alloy

Energy Technology Data Exchange (ETDEWEB)

Wheeler, D.W., E-mail: David.Wheeler@awe.co.uk; Ennaceur, S.M.; Matthews, M.B.; Roussel, P.; Bayer, P.D.

2016-08-01

In plutonium-gallium (Pu-Ga) alloys that have a Ga content of 0.3–0.4 wt%, their readiness to transform to α′ renders them of particular interest in efforts to understand the tenuous nature of δ phase stability. The present study is a comprehensive examination of the structure and phase stability of a cast Pu-0.32 wt% Ga alloy, the Ga content being close to the minimum amount needed to retain the δ phase to ambient temperature. The alloy was characterised in both the as-cast condition as well as following a homogenising heat treatment. The 250-h heat treatment at 450 °C was shown to achieve an apparently stable δ-Pu phase. However, the stability of the δ-Pu phase was shown to be marginal: partial transformation to α′-Pu was observed when the alloy was subjected to hydrostatic compression. Similar transformation was also apparent during metallographic preparation as well as during hardness indentation. The results provide new understanding of the nature of δ phase stability. - Highlights: • New insights into the delta phase stability of a Pu-0.32 wt% Ga alloy. • Density and DSC of as-cast alloy both show α-Pu contents of approximately 30%. • The heat-treated alloy has a largely δ-Pu structure at ambient temperature. • Heat-treated alloy susceptible to δ → α transformation during hardness indentation.

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

Science.gov (United States)

Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

2016-03-01

Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

Changes in endogenous hormone contents of pear stock ( Pyrus ...

African Journals Online (AJOL)

In this study, changes in endogenous hormone contents of pear stock seeds during cold stratification were investigated. Abscisic acid (ABA) content decreased with increase in the periods of stratification of pear stock seeds. However, gibberellic acid (GA) and indole-3-acetic acid (IAA) contents of Pyrus betulaefolia and ...

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Sukwon; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

2015-09-30

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10{sup −3} Ω-cm{sup 2} with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10{sup −3} Ω-cm{sup 2} contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

High-burnup/low-cooling-time fuel carrying capacity of the GA-4 and GA-9 spent fuel shipping casks

International Nuclear Information System (INIS)

Boshoven, J.K.; Hopf, J.E.

1994-01-01

In response to utilities' projected needs to ship higher burnup spent fuel, General Atomics (GA) has performed shielding and thermal analysis for the GA-4 and GA-9 legal weight shipping casks to determine the minimum cooling times for various burnup levels for fully loaded GA-4 and GA-9 casks and reduced payloads for the casks. Tables are provided in the paper which show the minimum cooling time for a given burnup and payload for each of the casks. The analyses show that the GA-4 and GA-9 casks can carry at least as many high-burnup and/or short-cooling-time spent fuel assemblies as present day shipping casks. In addition, the GA casks are able to carry at least twice as many assemblies as the present day shipping casks if the spent fuel burnup levels and/or cooling times are open-quotes coolerclose quotes or open-quotes as coolclose quotes as their design basis fuels. The increased shipping capacity for these more common open-quotes coolerclose quotes assemblies allows fewer shipments and therefore increases the efficiency and lowers predicted risks of the transport system

Exciton binding energy in GaAsBiN spherical quantum dot heterostructures

Science.gov (United States)

Das, Subhasis; Dhar, S.

2017-03-01

The ground state exciton binding energies (EBE) of heavy hole excitons in GaAs1-x-yBixNy - GaAs spherical quantum dots (QD) are calculated using a variational approach under 1s hydrogenic wavefunctions within the framework of effective mass approximation. Both the nitrogen and the bismuth content in the material are found to affect the binding energy, in particular for larger nitrogen content and lower dot radii. Calculations also show that the ground state exciton binding energies of heavy holes increase more at smaller dot sizes as compared to that for the light hole excitons.

Characterization study of native oxides on GaAs(100) surface by XPS

Science.gov (United States)

Feng, Liu; Zhang, Lian-dong; Liu, Hui; Gao, Xiang; Miao, Zhuang; Cheng, Hong-chang; Wang, Long; Niu, Sen

2013-08-01

In order to know more about the surface state of GaAs(100) epitaxial wafer during a storage period of two years, the XPS analysis was carried out four times on the surface, respectively polished by chemical etching, stored in desiccator for half a year, one year and two years. The results indicated that even after cleaned by proper etchant solutions, the fresh surface was slightly oxidized with Ga2O3, As2O3 and organic contaminant. The epi-wafer was always exposed to air during the storage period, so more and more oxides turned out. The mixed oxide layer comprised of C-OR, COOR, Ga2O3, As2O3 and As2O5 appeared after only half a year. In the ageing process of two years, the oxide types of gallium or arsenic did not change with stable content of Ga2O3 and remarkably fluctuating relative contents of As2O3 and As2O5. Based on the intensity ratio of Ga 3d-Ga2O3 to Ga 3d-GaAs, the thickness of oxide layer was estimated. The oxide layer generated after chemical polishing was very thin, just only 0.435nm thick, and then it grew rapidly, approximately 1.822nm after one year while almost no change any more subsequently. It was indicated that after the epi-wafer was stored for one year, because of volatile As2O3 or As2O5, there remained a large amount of Ga2O3 in oxide layer, which prevented the reactions between bulk material and oxide layer with oxygen. So native oxide layer plays a role as passive film to protect epi-wafer against the environment during a long storage period.

Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer

Science.gov (United States)

Shim, Jae-Phil; Seong, Won-Seok; Min, Jung-Hong; Kong, Duk-Jo; Seo, Dong-Ju; Kim, Hyung-jun; Lee, Dong-Seon

2016-11-01

We introduce ITO on graphene as a current-spreading layer for separated InGaN/GaN nanorod LEDs for the purpose of passivation-free and high light-extraction efficiency. Transferred graphene on InGaN/GaN nanorods effectively blocks the diffusion of ITO atoms to nanorods, facilitating the production of transparent ITO/graphene contact on parallel-nanorod LEDs, without filling the air gaps, like a bridge structure. The ITO/graphene layer sufficiently spreads current in a lateral direction, resulting in uniform and reliable light emission observed from the whole area of the top surface. Using KOH treatment, we reduce series resistance and reverse leakage current in nanorod LEDs by recovering the plasma-damaged region. We also control the size of the nanorods by varying the KOH treatment time and observe strain relaxation via blueshift in electroluminescence. As a result, bridge-structured LEDs with 8 min of KOH treatment show 15 times higher light-emitting efficiency than with 2 min of KOH treatment.

Pressure dependence of optical transitions in In0.15Ga0.85N/GaN multiple quantum wells

International Nuclear Information System (INIS)

Shan, W.; Ager, J.W. III; Walukiewicz, W.; Haller, E.E.; McCluskey, M.D.; Johnson, N.M.; Bour, D.P.

1998-01-01

The effects of hydrostatic pressure on optical transitions in In 0.15 Ga 0.85 N/GaN multiple quantum wells (MQW close-quote s) have been studied. The optical transition associated with confined electron and hole states in the MQW close-quote s was found to shift linearly to higher energy with pressure but exhibit a significantly weaker pressure dependence compared to bulklike thick epitaxial-layer samples. Similar pressure coefficients obtained by both photomodulation and photoluminescence measurements rule out the possibility of the transition involving localized states deep in the band gap. We found that the difference in the compressibility of In x Ga 1-x N and GaN induces a tensile strain in the compressively strained In x Ga 1-x N well layers, partially compensating the externally applied hydrostatic pressure. This mechanical effect is primarily responsible for the smaller pressure dependence of the optical transitions in the In x Ga 1-x N/GaN MQW close-quote s. In addition, the pressure-dependent measurements allow us to identify a spectral feature observed at an energy below the GaN band gap. We conclude that this feature is due to transitions from ionized Mg acceptor states to the conduction band in the p-type GaN cladding layer rather than a confined transition in the MQW close-quote s. copyright 1998 The American Physical Society

Moessbauer investigation of Sm{sub 2}Fe{sub 17-x}Ga{sub x} powders at different steps of the HDDR process

Energy Technology Data Exchange (ETDEWEB)

Steyaert, S.; Breton, J.-M. le; Teillet, J. [Rouen Univ. (France). Groupe de Metall. Phys.; Kubis, M.; Handstein, A.; Mueller, K.H. [Rouen Univ. (France). Groupe de Metall. Phys.]|[Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe

1998-07-01

Sm{sub 2}Fe{sub 17-x}Ga{sub x} powders (x=0,0.5,1,2) obtained at different steps of the HDDR process were analysed by Moessbauer spectrometry. For the homogenised powders, the mean hyperfine field of the Sm{sub 2}Fe{sub 17-x}Ga{sub x} contribution increases with Ga content in agreement with a lattice expansion. The anisotropy change from planar to uniaxial is confirmed in samples with x = 2. In the hydrogenated powders, the value of the mean hyperfine field of Sm{sub 2}Fe{sub 17-x}Ga{sub x}H{sub y} is greater than that of Sm{sub 2}Fe{sub 17-x}Ga{sub x} in the corresponding homogenised powders, in agreement with the presence of hydrogen in the 2:17 structure. It decreases with increasing Ga amount, suggesting that the H content in the Sm{sub 2}Fe{sub 17-x}Ga{sub x}H{sub y} phase decreases with increasing Ga content. In the disproportionated powders, the disproportionation reaction is incomplete for x {>=} 1 as the contributions of both the Sm{sub 2}Fe{sub 17-x}Ga{sub x}H{sub y} and {alpha}-Fe(Ga) phases are observed in the corresponding Moessbauer spectra. This indicates that for x {>=} 1 the hydrogen diffusion is inhibited during hydrogenation. (orig.)

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

Science.gov (United States)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

Opto-electronic characterization of polycrystalline CuInS2 and Cu(In,Ga)S2 absorber layers by photoluminescence

International Nuclear Information System (INIS)

Heidemann, Florian

2011-01-01

Photoluminescence (PL) is an established method to characterize the optoelectronic properties of solar cell absorber layers. With the help of Planck's generalized law it is in principle possible to determine the quasi-Fermi level splitting - which is the upper limit of the open circuit voltage V oc - and the absorption coefficient of a solar cell before its actual completion. For large-scale measurements (mm/cm regime) this is valid for absorber layers with lateral homogeneous properties, however it is not directly transferable to polycrystalline semiconductors due to laterally fluctuating opto-electronic and structural parameters. The lateral fluctuations in opto-electronic properties of polycrystalline Cu(In 1-ξ Ga ξ )S 2 have been analyzed (e.g. with respect to fluctuations in quasi-Fermi level splitting, optical band-gap and sub band-gap absorbance) by measuring laterally and spectrally resolved PL on the μm-scale and providing the transition towards macroscopic PL measurements on the mm-scale. To give a comprehensive characterization, surface roughness and optical properties have been studied and methods for feature extraction have been applied. On the microscopic scale variations in the quasi-Fermi level splitting Δ x,y E Fnp of about 38 meV (CuInS 2 ) and 53 meV (Cu(In,Ga)S 2 ) have been found. From local absorbance spectra extracted from PL measurements on Cu(In,Ga)S 2 fluctuations in the optical band-gap E opt with a full width at half maximum of FWHM E opt ∼80 meV could be extracted, whereas band-gap fluctuations in CuInS 2 are found to be negligible. Thus band-gap fluctuations seem to be mainly caused by a varying gallium (Ga) content. Furthermore, regions with higher E opt and with it a potential higher Ga content, show a higher quasi-Fermi level splitting. As a major limiting factor for the local quasi-Fermi level splitting E Fnp the local density of deep defects could be identified. Due to low luminescence yields of Cu(In 1-ξ Ga ξ )S 2 under

Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model

International Nuclear Information System (INIS)

Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Koehler, K.; Johs, B.

2000-01-01

Spectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, Al x Ga 1-x N (x le 0.16), and In 0.13 Ga 0.87 N were deduced. Further, the dependence of the Al x Ga 1-x N band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the Al x Ga 1-x N gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

International Nuclear Information System (INIS)

Chang, P. C.; Baca, A. G.; Li, N. Y.; Xie, X. M.; Hou, H. Q.; Armour, E.

2000-01-01

We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs DHBT has a low V ON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In 0.03 Ga 0.97 As 0.99 N 0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BV CEO ) is 10 V, consistent with the BV CEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics

GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

Science.gov (United States)

Kisan Patil, Pallavi; Luna, Esperanza; Matsuda, Teruyoshi; Yamada, Kohki; Kamiya, Keisuke; Ishikawa, Fumitaro; Shimomura, Satoshi

2017-03-01

We report a GaAs0.96Bi0.04/GaAs multiple quantum well (MQW) light emitting diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) technique. In particular, the QWs and the barriers in the intrinsic region were grown at the different temperatures of {T}{{GaAsBi}} = 350 °C and {T}{{GaAs}} = 550 ^\\circ {{C}}, respectively. Investigations of the microstructure using transmission electron microscopy (TEM) reveal homogeneous MQWs free of extended defects. Furthermore, the local determination of the Bi distribution profile across the MQWs region using TEM techniques confirm the uniform Bi distribution, while revealing a slightly chemically graded GaAs-on-GaAsBi interface due to Bi surface segregation. Despite this small broadening, we found that Bi segregation is significantly reduced (up to 18% reduction) compared to previous reports on Bi segregation in GaAsBi/GaAs MQWs. Hence, the TST procedure proves as a very efficient method to reduce Bi segregation and thus increase the quality of the layers and interfaces. These improvements positively reflect in the optical properties. Room temperature photoluminescence and electroluminescence (EL) at 1.23 μm emission wavelength are successfully demonstrated using TST MQWs containing less Bi content than in previous reports. Finally, LED fabricated using the present TST technique show current-voltage (I-V) curves with a forward voltage of 3.3 V at an injection current of 130 mA under 1.0 kA cm-2 current excitation. These results not only demonstrate that TST technique provides optical device quality GaAsBi/GaAs MQWs but highlight the relevance of TST-based growth techniques on the fabrication of future heterostructure devices based on dilute bismides.

Spin current and electrical polarization in GaN double-barrier structures

OpenAIRE

Litvinov, V. I.

2007-01-01

Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The relation between the electrical polarization and the spin orientation allows engineering a zero magnetic field spin injection manipulating the lattice-mismatch strain with an Al-content in the barriers.

The Glycated Albumin (GA) to HbA1c Ratio Reflects Shorter-Term Glycemic Control than GA: Analysis of Patients with Fulminant Type 1 Diabetes.

Science.gov (United States)

Koga, Masafumi; Inada, Shinya; Nakao, Taisei; Kawamori, Ryuzo; Kasayama, Soji

2017-01-01

Glycated albumin (GA) reflects shorter-term glycemic control than HbA1c. We have reported that HbA1c is paradoxically increased in diabetic patients whose glycemic control deteriorated before ameliorating. In this study, we analyzed paradoxical increases of glycemic control indicators after treatment in patients with fulminant type 1 diabetes (FT1D). We also investigated whether the GA/HbA1c ratio may reflect shorter-term glycemic control than GA. Five FT1D patients whose post-treatment HbA1c and GA levels were measured were enrolled. We also used a formula to estimate HbA1c and GA from the fictitious models of changes in plasma glucose in FT1D patients. In this model, the periods during which HbA1c, GA, and the GA/HbA1c ratio were higher than at the first visit were compared. In addition, the half-life for the GA/HbA1c ratio was calculated in accordance with the half-lives for HbA1c and GA (36 and 14 days, respectively). In all FT1D patients, HbA1c levels 2-4 weeks after treatment were increased, with three patients (60%) experiencing an increase of GA levels. In contrast, an increase of the GA/HbA1c ratio was observed in only one patient. In all of the different models of changes in plasma glucose in FT1D patients, the length of time during which the values were higher than at the first visit was in the order of HbA1c > GA > GA/HbA1c ratio. The half-life for the GA/HbA1c ratio was 9 days, shorter than GA. These findings suggest that the GA/HbA1c ratio reflects shorter-term glycemic control than GA. © 2016 Wiley Periodicals, Inc.

Substrate dependence of TM-polarized light emission characteristics of BAlGaN/AlN quantum wells

Science.gov (United States)

Park, Seoung-Hwan; Ahn, Doyeol

2018-06-01

To study the substrate dependence of light emission characteristics of transverse-magnetic (TM)-polarized light emitted from BAlGaN/AlN quantum wells (QWs) grown on GaN and AlN substrates were investigated theoretically. It is found that the topmost valence subband for QW structures grown on AlN substrate, is heavy hole state (HH1) while that for QW structures grown on GaN substrate is crystal-field split off light hole state (CL1), irrespective of the boron content. Since TM-polarized light emission is associated with the light hole state, the TM-polarized emission peak of BAlGaN/AlN QW structures grown on GaN substrate is expected to be much larger than that of the QW structure grown on AlN substrate. Also, both QW structures show that the spontaneous emission peak of BAlGaN/AlN QW structures would be improved with the inclusion of the boron. However, it rapidly begins to decrease when the boron content exceeds a critical value.

Optical-absorption spectra associated with shallow donor impurities in GaAs-(Ga,Al)As quantum-dots

International Nuclear Information System (INIS)

Silva Valencia, J.

1995-08-01

The binding energy of a hydrogenic donor impurity and the optical-absorption spectra associated with transitions between the n=1 valence level and the donor-impurity band were calculated for infinite barrier-well spherical GaAs-(Ga,Al)As quantum-dots of different radii, using the effective mass approximation within a variational scheme. An absorption peak associated with transitions involving impurities at the center of the well and a peak related with impurities at the edge of the dot were the main features observed for the different radii of the dots considered in the calculations. Also as a result of the higher electronic confinement in a quantum- dot, we found a much wider energy range of the absorption spectra when compared to infinite GaAs-(Ga,Al)As quantum-wells and quantum-well wires of width and diameter comparable to the diameter of the quantum dot. (author). 13 refs, 3 figs

Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells

International Nuclear Information System (INIS)

Karcher, C.; Jandieri, K.; Kunert, B.; Fritz, R.; Volz, K.; Stolz, W.; Gebhard, F.; Baranovskii, S.D.; Heimbrodt, W.

2013-01-01

The compositional dependence of the properties of metastable Ga(N,As,P) has been characterized optically by means of temperature dependent absorptive and emissive techniques. By assuming a two-scaled disorder within the alloy caused by microscopic composition fluctuations on the one hand and a fluctuation of strain fields or the well width on the other hand, Monte Carlo simulations of the carrier dynamics are in good agreement with the experimental findings. The compositional dependence further reveals an increase of disorder with decreasing nitrogen content. - Highlights: ► Temperature dependent spectral dataset of two Ga(N,As,P)/ MQWs with varying composition. ► High resolution TEM study revealing height fluctuations within the triple QWs. ► Two distinct scales of disorder corresponding to two spatial length scales. ► Almost perfect Monte-Carlo simulations of the experimental findings. ► Theoretical explanation of the discovered reduction of disorder with increasing N.

Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

International Nuclear Information System (INIS)

Babinski, Adam; Jasinski, J.; Bozek, R.; Szepielow, A.; Baranowski, J. M.

2001-01-01

The effect of postgrowth rapid thermal annealing (RTA) on GaAs proximity-capped structures with self-assembled InAs/GaAs quantum dots (QDs) is investigated using transmission electron microscopy (TEM) and photoluminescence (PL). As can be seen from the TEM images, QDs increase their lateral sizes with increasing annealing temperature (up to 700 C). QDs cannot be distinguished after RTA at temperature 800 C or higher, and substantial thickening of the wetting layer can be seen instead. The main PL peak blueshifts as a result of RTA. We propose that in the as-grown sample as well, as in samples annealed at temperatures up to 700 C, the peak is due to the QDs. After RTA at 800 C and higher the PL peak is due to a modified wetting layer. Relatively fast dissolution of QDs is explained in terms of strain-induced lateral Ga/In interdiffusion. It is proposed that such a process may be of importance in proximity-capped RTA, when no group-III vacancy formation takes place at the sample/capping interface

Optical losses in p-type layers of GaN ridge waveguides in the IR region

Science.gov (United States)

Westreich, Ohad; Katz, Moti; Atar, Gil; Paltiel, Yossi; Sicron, Noam

2017-07-01

Optical losses in c-plane (0001) GaN ridge waveguides, containing Mg-doped layers, were measured at 1064 nm, using the Fabry-Perot method. The losses increase linearly with the modal content of the p-layer, indicating that the absorption in these waveguides is dominated by p-layer absorption. The p-layer absorption is strongly anisotropic with E⊥c losses 4 times higher than E∥c. The absorption is temperature independent between 10 °C and 60 °C, supporting the possibility that it is related to Mg-bound holes.

Evaluation of 68Ga-DOTATOC PET/MRI for whole-body staging of neuroendocrine tumours in comparison with 68Ga-DOTATOC PET/CT.

Science.gov (United States)

Sawicki, Lino M; Deuschl, Cornelius; Beiderwellen, Karsten; Ruhlmann, Verena; Poeppel, Thorsten D; Heusch, Philipp; Lahner, Harald; Führer, Dagmar; Bockisch, Andreas; Herrmann, Ken; Forsting, Michael; Antoch, Gerald; Umutlu, Lale

2017-10-01

To compare the diagnostic performance of 68 Ga-DOTATOC PET/MRI and 68 Ga-DOTATOC PET/CT in the whole-body staging of patients with neuroendocrine tumours (NET). Thirty patients with histopathologically confirmed NET underwent PET/CT and PET/MRI in a single-injection protocol. PET/CT and PET/MRI scans were prospectively evaluated with regard to lesion count, localization, nature (NET/non-NET), and conspicuity (four-point scale). Histopathology and follow-up imaging served as the reference standards. The proportions of NET and non-NET lesions rated correctly were compared using McNemar's chi-squared test. The Wilcoxon test was used to assess differences in SUVmax and lesion conspicuity. The correlation between the SUVmax for the same lesions from each modality was analysed using Pearson's correlation coefficient (r). According to the reference standard, there were 197 lesions (142 NET, 55 non-NET). Lesion-based analysis showed a higher proportion of correctly rated NET lesions on PET/MRI than on PET/CT (90.8% vs. 86.7%, p = 0.031), whereas on PET/CT there was a higher proportion of correctly rated non-NET lesions (94.5% vs. 83.6%, p = 0.031). SUVmax was strongly correlated (r = 0.86; p PET/MRI (both p PET/MRI yielded a higher proportion of correctly rated NET lesions and should be regarded as a valuable alternative to 68 Ga-DOTATOC PET/CT in whole-body staging of NET patients. • 68 Ga-DOTATOC PET/MRI correctly identified more NET lesions than 68 Ga-DOTATOC PET/CT. • 68 Ga-DOTATOC PET/MRI provides better NET lesion conspicuity than 68 Ga-DOTATOC PET/CT. • SUVmax values from the two modalities are strongly correlated and do not differ significantly.

Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

International Nuclear Information System (INIS)

Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun

1999-01-01

We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps

Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

International Nuclear Information System (INIS)

He, Xiaoguang; Zhao, Degang; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

2016-01-01

The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

Energy Technology Data Exchange (ETDEWEB)

He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

2016-06-15

The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

International Nuclear Information System (INIS)

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

2010-01-01

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

Long-term trends in the total electron content

Czech Academy of Sciences Publication Activity Database

Laštovička, Jan; Urbář, Jaroslav; Kozubek, Michal

2017-01-01

Roč. 44, č. 16 (2017), s. 8186-8172 ISSN 0094-8276 R&D Projects: GA ČR(CZ) GA15-03909S Institutional support: RVO:68378289 Keywords : total electron content * long-term trend * solar control Subject RIV: DG - Athmosphere Sciences, Meteorology OBOR OECD: Climatic research Impact factor: 4.253, year: 2016 http://onlinelibrary.wiley.com/doi/10.1002/2017GL075063/full

Type II GaSb quantum ring solar cells under concentrated sunlight.

Science.gov (United States)

Tsai, Che-Pin; Hsu, Shun-Chieh; Lin, Shih-Yen; Chang, Ching-Wen; Tu, Li-Wei; Chen, Kun-Cheng; Lay, Tsong-Sheng; Lin, Chien-Chung

2014-03-10

A type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one.

Salinity Inhibits Rice Seed Germination by Reducing α-Amylase Activity via Decreased Bioactive Gibberellin Content

Directory of Open Access Journals (Sweden)

Li Liu

2018-03-01

Full Text Available Seed germination plays important roles in the establishment of seedlings and their subsequent growth; however, seed germination is inhibited by salinity, and the inhibitory mechanism remains elusive. Our results indicate that NaCl treatment inhibits rice seed germination by decreasing the contents of bioactive gibberellins (GAs, such as GA1 and GA4, and that this inhibition can be rescued by exogenous bioactive GA application. To explore the mechanism of bioactive GA deficiency, the effect of NaCl on GA metabolic gene expression was investigated, revealing that expression of both GA biosynthetic genes and GA-inactivated genes was up-regulated by NaCl treatment. These results suggest that NaCl-induced bioactive GA deficiency is caused by up-regulated expression of GA-inactivated genes, and the up-regulated expression of GA biosynthetic genes might be a consequence of negative feedback regulation of the bioactive GA deficiency. Moreover, we provide evidence that NaCl-induced bioactive GA deficiency inhibits rice seed germination by decreasing α-amylase activity via down-regulation of α-amylase gene expression. Additionally, exogenous bioactive GA rescues NaCl-inhibited seed germination by enhancing α-amylase activity. Thus, NaCl treatment reduces bioactive GA content through promotion of bioactive GA inactivation, which in turn inhibits rice seed germination by decreasing α-amylase activity via down-regulation of α-amylase gene expression.

Comparison of Ga-68 DOTA-TATE and Ga-68 DOTA-LAN PET/CT imaging in the same patient group with neuroendocrine tumours: preliminary results.

Science.gov (United States)

Demirci, Emre; Ocak, Meltem; Kabasakal, Levent; Araman, Ahmet; Ozsoy, Yildiz; Kanmaz, Bedii

2013-08-01

Ga-68-DOTA-TATE seems to be superior to that obtained by Ga-68 DOTA-LAN. With its significantly higher lesion uptake and higher ability to detect lesions, Ga-68-DOTA-TATE seems to be a better radioligand compared with Ga-68-DOTA-LAN for the diagnosis of NETs.

Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

International Nuclear Information System (INIS)

Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

2006-01-01

We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

Science.gov (United States)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Two new Np--Ga phases: α-NpGa2 and metastable m-NpGa2

International Nuclear Information System (INIS)

Giessen, B.C.; Elliott, R.O.

1976-01-01

Following an earlier study of metastable Np-rich Np--Ga alloys, rapidly quenched Np--Ga alloys with 63 to 80 at. pct. Ga were prepared and studied. Two new NpGa 2 phases, both with an AlB 2 type structure, were found: α-NpGa 2 , with a = 4.246A, c = 4.060A, c/a = 0.956, and m-NpGa 2 , with a = 4.412A, c = 3.642A, c/a = 0.825. While m-NpGa 2 was observed only in very fast quenched (splat cooled) samples and appears to be metastable, α-NpGa 2 is probably an equilibrium phase. In a splat cooled alloy with 75 at. pct. Ga, another, unidentified, metastable phase was observed. Crystal chemical discussions of atomic volumes, interatomic distances and axial ratios are given; the volume difference between the two forms of NpGa 2 is correlated with a valence change of Np

Physical properties and applications of InxGa1-xN nanowires

Science.gov (United States)

Segura-Ruiz, J.; Gómez-Gómez, M.; Garro, N.; Martínez-Criado, G.; Cantarero, A.; Denker, C.; Malindretos, J.; Rizzi, A.

2014-05-01

We have successfully grown InxGa1-xN nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. InxGa1-xN is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowires help to explain this contradictory result.

Optical and electronic properties of AlGaN/GaN heterostructures; Optische und elektronische Eigenschaften von AlGaN/GaN-Heterostrukturen

Energy Technology Data Exchange (ETDEWEB)

Winzer, Andreas T.

2008-10-28

The electronic material properties of AlGaN/GaN heterostructures were investigated. The analysis of optical spectra by complex models allowed for the first time to confirm the theoretically predicted dependence of the polarisation discontinuity (also called polarisation charge) on the Al content by reliable experiments. Furthermore, it is shown that the polarisation discontinuity is constant over the temperature range from 5 K up to room temperature. The method employed here is based on the analysis of electroreflectance (ER) spectra and exploits the specific dependence of the electric field strength within a layer on the applied electric voltage. In this work this method is consequently refined to surpass all alternative methods in accuracy. ER spectra of group-III-nitrides posses some general peculiarities: (i) In di- rect proximity to the band gap they can not be described by constant Seraphin coefficients in contrast to small gap semiconductors (e.g. GaAs). (ii) Though, the analysis of the Franz-Keldysh oscillations by Aspnes' method yields the correct values of the electric field strength as it is the case for small gap semiconductors. Optical and especially ER spectra of group-III-nitrides can only be described completely by taking into account for excitons in electric fields. For this a mo- del proposed by Blossey was applied to nitride semiconductors and implemented into a software program. By extensive numerical simulations it was found that the energetic position of the exciton main resonance as well as its spectral width depend linearly on the electric field strength. The approach presented is unique since it allows for a quantitative description of excitons in inhomogeneous electric fields. The good agreement between experiment and simulation supports the reliability of the material properties presented in this work. The operation of AlGaN/GaN heterostructures as chemical sensors was investigated by means of optical spectra too. If Pt contacted

Nitridation of porous GaAs by an ECR ammonia plasma

International Nuclear Information System (INIS)

Naddaf, M; Hullavarad, S S; Ganesan, V; Bhoraskar, S V

2006-01-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy

Nitridation of porous GaAs by an ECR ammonia plasma

Energy Technology Data Exchange (ETDEWEB)

Naddaf, M [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India); Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic); Hullavarad, S S [Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742 (United States); Ganesan, V [Inter University Consortium, Indore (India); Bhoraskar, S V [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India)

2006-02-15

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Nitridation of porous GaAs by an ECR ammonia plasma

Science.gov (United States)

Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

2006-02-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Antisites and anisotropic diffusion in GaAs and GaSb

KAUST Repository

Tahini, H. A.; Bracht, H.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlö gl, Udo

2013-01-01

The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport

Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

CERN Document Server

Shim, B R; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, S Y

1999-01-01

We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In sub x Ga sub 1 sub - sub x As layers with x<= 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing...

Modification of GaN(0001) growth kinetics by Mg doping

International Nuclear Information System (INIS)

Monroy, E.; Andreev, T.; Holliger, P.; Bellet-Amalric, E.; Shibata, T.; Tanaka, M.; Daudin, B.

2004-01-01

We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology

Higher predation risk for insect prey at low latitudes and elevations

Czech Academy of Sciences Publication Activity Database

Roslin, T.; Hardwick, B.; Novotný, Vojtěch; Petry, W. K.; Andrew, N. R.; Asmus, A.; Barrio, I. C.; Basset, Yves; Boesing, A. L.; Bonebrake, T. C.; Cameron, E. K.; Dáttilo, W.; Donoso, D. A.; Drozd, P.; Gray, C. L.; Hik, S. D.; Hill, S. J.; Hopkins, T.; Huang, S.; Koane, B.; Laird-Hopkins, B.; Laukkanen, L.; Lewis, O. T.; Milne, S.; Mwesige, I.; Nakamura, A.; Nell, C. S.; Nichols, E.; Prokurat, A.; Sam, Kateřina; Schmidt, N. M.; Slade, A.; Slade, V.; Suchánková, A.; Teder, T.; van Nouhuys, S.; Vandvik, V.; Weissflog, A.; Zhukovich, V.; Slade, E. M.

2017-01-01

Roč. 356, č. 6339 (2017), s. 742-744 ISSN 0036-8075 R&D Projects: GA ČR(CZ) GP14-32024P; GA ČR(CZ) GA14-04258S EU Projects: European Commission(XE) 669609 - Diversity6continents Institutional support: RVO:60077344 Keywords : plasticine caterpillars * arthropod predation * bird predation Subject RIV: EH - Ecology, Behaviour OBOR OECD: Ecology Impact factor: 37.205, year: 2016 http:// science . science mag.org/content/356/6339/742/tab-pdf

Electronic structure analysis of GaN films grown on r- and a-plane sapphire

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

2015-10-05

Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

International Nuclear Information System (INIS)

Huang Jie; Li Ming; Tang Chak-Wah; Lau Kei-May

2014-01-01

High-performance AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrates by metal—organic chemical-vapor deposition (MOCVD) with a selective non-planar n-type GaN source/drain (S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance (g m ) of 247 mS/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard GaN HEMT on silicon substrate, the f T and f MAX is 50% and 52% higher, respectively. (interdisciplinary physics and related areas of science and technology)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

International Nuclear Information System (INIS)

Wang, H.T.; Tan, L.S.; Chor, E.F.

2007-01-01

Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 deg. C in flowing N 2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions

Content

DEFF Research Database (Denmark)

Keiding, Tina Bering

secondary levels. In subject matter didactics, the question of content is more developed, but it is still mostly confined to teaching on lower levels. As for higher education didactics, discussions on selection of content are almost non-existent on the programmatic level. Nevertheless, teachers are forced...... curriculum, in higher education, and to generate analytical categories and criteria for selection of content, which can be used for systematic didactical reflection. The larger project also concerns reflection on and clarification of the concept of content, including the relation between content at the level......Aim, content and methods are fundamental categories of both theoretical and practical general didactics. A quick glance in recent pedagogical literature on higher education, however, reveals a strong preoccupation with methods, i.e. how teaching should be organized socially (Biggs & Tang, 2007...

In situ environmental transmission electron microscope investigation of NiGa nanoparticle synthesis

DEFF Research Database (Denmark)

Damsgaard, Christian Danvad; Duchstein, Linus Daniel Leonhard; Elkjær, Christian Fink

2011-01-01

. Both Ni and Ga edges are observed in the spectra. Quantification of Ni:Ga ratio is hampered by the presence of the Ni L1 edge. The ETEM experiments have been supported by complementary in situ X-Ray Diffraction (XRD) measurements on synthesis of Ni5Ga3 catalyst on a high surface area silica support...... prepared by wet impregnation [2]. Although the in situ XRD was performed at significantly higher H2 flow (40 Nml/min) and pressure (100 kPa) the complimentary data correlates with the main temperature dependence of phase and structure and shows formation of the Ni5Ga3 phase for temperatures higher than 300...

Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure

International Nuclear Information System (INIS)

Chen, J.Y.; Chen, B.H.; Huang, Y.S.; Chin, Y.C.; Tsai, H.S.; Lin, H.H.; Tiong, K.K.

2013-01-01

Interfacial characteristics of GaAs/GaAs 0.64 P 0.19 Sb 0.17 GaAs heterostructures and emission properties of a quaternary GaAs 0.64 P 0.19 Sb 0.17 layer were studied by excitation-power- and temperature-dependent photoluminescence (PL) measurements. The GaAs-to-GaAsPSb upper interface related emission feature and signals from GaAsPSb and GaAs were observed and characterized. The upper interface related emission peak was attributed to the radiative recombination of spatially separated electron–hole pairs and suggesting the type-II alignment at the GaAs/GaAsPSb interface. The localized excitonic emission feature of GaAsPSb revealed a blueshift due to the saturation effect of localized states and showed a fast thermal-quench with the increase of temperature. The temperature variation of the band edge emission signal of GaAsPSb was found to follow that of GaAs closely. -- Highlights: ► PL characterization of GaAs/GaAsPSb/GaAs heterostructure. ► Type-II alignment at the GaAs/GaAsPSb interface. ► Near-band-edge emission lines of GaAsPSb

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.

Science.gov (United States)

Chang, Hung-Ming; Lai, Wei-Chih; Chen, Wei-Shou; Chang, Shoou-Jinn

2015-04-06

We demonstrate indium gallium nitride/gallium nitride/aluminum nitride (AlN/GaN/InGaN) multi-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) to improve light output power. Similar to conventional UV LEDs with AlGaN/InGaN MQWs, UV LEDs with AlN/GaN/InGaN MQWs have forward voltages (V(f)'s) ranging from 3.21 V to 3.29 V at 350 mA. Each emission peak wavelength of AlN/GaN/InGaN MQW UV LEDs presents 350 mA output power greater than that of the corresponding emission peak wavelength of AlGaN/InGaN MQW UV LEDs. The light output power at 350mA of AlN/GaN/InGaN MQWs UV LEDs with 375 nm emission wavelength can reach around 26.7% light output power enhancement in magnitude compared to the AlGaN/InGaN MQWs UV LEDs with same emission wavelength. But 350mA light output power of AlN/GaN/InGaN MQWs UV LEDs with emission wavelength of 395nm could only have light output power enhancement of 2.43% in magnitude compared with the same emission wavelength AlGaN/InGaN MQWs UV LEDs. Moreover, AlN/GaN/InGaN MQWs present better InGaN thickness uniformity, well/barrier interface quality and less large size pits than AlGaN/InGaN MQWs, causing AlN/GaN/InGaN MQW UV LEDs to have less reverse leakage currents at -20 V. Furthermore, AlN/GaN/InGaN MQW UV LEDs have the 2-kV human body mode (HBM) electrostatic discharge (ESD) pass yield of 85%, which is 15% more than the 2-kV HBM ESD pass yield of AlGaN/InGaN MQW UV LEDs of 70%.

Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Chen Wanjun; Zhang Jing; Zhang Bo; Chen, Kevin Jing

2013-01-01

The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal—semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied. (semiconductor devices)

GaN Based Electronics And Their Applications

Science.gov (United States)

Ren, Fan

2002-03-01

The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

Renal Localization of {sup 67}Ga Citrate in Noninfectious Nephritis

Energy Technology Data Exchange (ETDEWEB)

Lee, Kang Wook; Jeong, Min Soo; Rhee, Sunn Kgoo; Kim, Sam Yong; Shin, Young Tai; Ro, Heung Kyu [Chungnam University College of Medicine, Deajeon (Korea, Republic of)

1992-07-15

{sup 67}Ga citrate scan has been requested for detection or follow-up of inflammatory or neoplastic disease. Visualization of {sup 67}Ga citrate in the kidneys at 48 and 72 hr post injection is usually interpreted as evidence of renal pathology. But precise mechanisms of abnormal {sup 67}Ga uptake in kidneys were unknown. We undertook a study to determine the clinical value of {sup 67}Ga citrate imaging of the kidneys in 68 patients with primary or secondary nephropathy confirmed by renal biopsy and 66 control patients without renal disease. Renal uptake in 48 to 72 hr images was graded as follows: Grade 0=background activity;1=faint uptake greater than background; 2=definite uptake, but less than lumbar vertebrae;3 same uptake as lumbar vertebrae, but less than liver; 4=same or higher uptake than liver. The results were as follows. 1) 42 of 68(62%) patients with noninfectious nephritis showed grade 2 or higher {sup 67}Ga renal uptake but only 10 percent of control patients showed similar uptake. 2) In 14 patients with systemic lupus erythematosus, 8 of 9 (89%) patients with lupus nephritis exhibited marked renal uptake. 3) 36 of 41 patients (88%) with combined nephrotic syndrome showed Grade 2 or higher renal uptake. 4) Renal {sup 67}Ga uptake was correlated with clinical severity of nephrotic syndrome determined by serum albumin level, 24 hr urine protein excretion and serum lipid levels. 5) After complete remission of nephrotic syndrome, renal uptake in all 8 patients who were initially Grade 3 or 4, decreased to Grade 1 or 0. In conclusion, we think that the mechanism of renal {sup 67}Ga uptake in nephrotic syndrome might be related to the pathogenesis of nephrotic syndrome. In systemic lupus erythematosus, {sup 67}Ga citrate scan is useful in predicting renal involvement.

Physiological Responses and Fruit Retention of Carambola Fruit (Averrhoa carambola L. Induced by 2,4-D and GA3

Directory of Open Access Journals (Sweden)

BEKTI KURNIAWATI

2009-03-01

Full Text Available One of the problems in cultivation of carambola fruit is the high of flower and fruit drop during fruit development. To understand these problems and to improve fruit retention, the content of indole-3-acetic acid (IAA and total sugar in carambola fruit and leaves were analysed in response to application of gibberellic acid (GA3 and 2,4-dichlorophenoxyacetic acid (2,4-D. The experiments used 1,5 year old of carambola plants (Averrhoa carambola L. var Dewi grown in polybag of 40 x 50 cm. GA3 with the concentration of 0, 20, 40, and 60 ppm and 2,4-D of 0, 5, 10, and 15 ppm were applied to the flower and the supporting leaves of carambola plant. The parameters analysed were number of flower drop, fruit formation, fruit retention, number of harvestable fruit per cluster, fruit weight per cluster, the content of sugar in the leaves and IAA in the fruit. The result showed that IAA content of the fruit increased in response to single as well as combination of GA3 and 2,4-D application. Sugar content of the leaves also increased in response to GA3 and 2,4-D application; however, the pattern was different with that of IAA. The best treatment to improve fruit retention was a single application of 10 ppm 2,4-D or 60 ppm GA3, and combined application of 5 ppm 2,4-D and 60 ppm GA3.

Shot noise reduction in the AlGaAs/GaAs- and InGaP/GaAs-based HBTs

Science.gov (United States)

Sakalas, Paulius; Schroeter, Michael; Zampardi, Peter; Zirath, Herbert

2003-05-01

Noise parameters of AlGaAs/GaAs and InGaP/GaAs HBTs were measured in microwave frequency range and modeled using the small-signal equivalent circuit approach. Correlated current noise sources in the base and collector currents with thermal noise in the circuit resistive elements were accounted for by the model and yielded good agreement with the measured data. This enabled an extraction of the different noise source contributions to minimum noise figure (NFmin) in AlGaAs/GaAs and InGaP/GaAs HBTs. Decomposition of the (NFmin) in to the different contributors showed that the main noise sources in investigated HBTs are correlated base and collector current shot noise. The observed minimum of NFmin versus frequency at lower collector current is explained by the reduction of the emitter/base junction shot noise component due to the spike in the emitter/base junction and associated accumulation of the quasi-thermalized electrons forming a space charge, which screens the electron transfer through the barrier. The bias (VCE) increase creates an efficient electric field in collector/base junction, capable of 'washing out' the accumulated charge. Such shot noise reduction in HBTs could be exploited in the LNA for the RF application.

Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen InxGa1−xNyAs1−y/GaAs cylindrically shaped quantum dots

International Nuclear Information System (INIS)

Duque, C.M.; Morales, A.L.; Mora-Ramos, M.E.; Duque, C.A.

2014-01-01

An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs

Temperature dependence of Raman scattering in β-(AlGa2O3 thin films

Directory of Open Access Journals (Sweden)

Xu Wang

2016-01-01

Full Text Available We report a detailed investigation on temperature-dependent Raman scattering of β-(AlGa2O3 thin films with different Al content (0-0.72 under the temperature range of 77-300 K. The temperature-dependent Raman shifts and linewidths of the phonon modes were obtained by employing Lorentz fitting. The linewidths broadening of phonon modes with the temperature can be well explained by a model involving the effects of thermal expansion, lattice-mismatch-induced strain, and decay of optical phonon into two and three phonons. It is clearly demonstrated dependence of the linewidths and decay process on the Al content in β-(AlGa2O3 thin films, which can provide an experimental basis for realization of (AlGa2O3-based optoelectronic device applications.

Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

International Nuclear Information System (INIS)

Yoshikawa, A.; Che, S. B.; Yamaguchi, W.; Saito, H.; Wang, X. Q.; Ishitani, Y.; Hwang, E. S.

2007-01-01

The authors propose and demonstrate the fabrication of InN/GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN/GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors

Optical response of confined excitons in GaInAsSb/GaSb Quantum Dots heterostructures

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Cano, R [Departamento de Fisica, Universidad Autonoma de Occidente, A.A. 2790, Cali (Colombia); Tirado-Mejia, L; Fonthal, G; Ariza-Calderon, H [Laboratorio de Optoelectronica, Universidad del Quindio, A.A. 4603 Armenia (Colombia); Porras-Montenegro, N, E-mail: rsanchez40@gmail.co [Departamento de Fisica, Universidad del Valle, A.A. 25360, Cali (Colombia)

2009-05-01

The narrow-gap Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. In these compounds grown by liquid phase epitaxy over GaSb single crystals, for x and y values in the range of 0.10 to 0.14 for both variables, the photoluminescence optical response at 12K is blue-shifted by 20 meV related to the photoreflectance response. We believe this behavior is due to possible higher electronic confinement in some places of the heterostructure, possibly formed in the interface during the growth process. In order to explain this behavior, in this work we study the exciton recombination energy in spherical Quantum Dots (QDs) on Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, using the variational procedure within the effective-mass approximation and considering an electron in a Type I band alignment formed by two semiconductors with similar parabolic conduction bands. Our results are in good agreement with recent experimental results.

Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis

Science.gov (United States)

Shirazi-HD, M.; Diaz, R. E.; Nguyen, T.; Jian, J.; Gardner, G. C.; Wang, H.; Manfra, M. J.; Malis, O.

2018-04-01

AlxGa1-xN layers with Al-composition above 0.6 (0.6 < x < 0.9) grown under metal-rich conditions by plasma-assisted molecular beam epitaxy on m-plane GaN miscut towards the -c axis are kinetically unstable. Even under excess Ga flux, the effective growth rate of AlGaN is drastically reduced, likely due to suppression of Ga-N dimer incorporation. The defect structure generated during these growth conditions is studied with energy dispersive x-ray spectroscopy scanning transmission electron microscopy as a function of Al flux. The AlGaN growth results in the formation of thin Al(Ga)N layers with Al-composition higher than expected and lower Al-composition AlGaN islands. The AlGaN islands have a flat top and are elongated along the c-axis (i.e., stripe-like shape). Possible mechanisms for the observed experimental results are discussed. Our data are consistent with a model in which Al-N dimers promote release of Ga-N dimers from the m-plane surface.

ReGaTE: Registration of Galaxy Tools in Elixir

DEFF Research Database (Denmark)

Doppelt-Azeroual, Olivia; Mareuil, Fabien; Deveaud, Eric

2017-01-01

such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date...... of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE....

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

Science.gov (United States)

Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

2014-01-01

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.

Science.gov (United States)

Ansari, Azadeh; Liu, Che-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; Ku, Pei-Cheng; Rais-Zadeh, Mina

2015-03-17

This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient ( d 33 ) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF₂) etch and therefore eliminating the need for backside lithography and etching.

Self-consistent simulation of carrier confinement characteristics in (AlyGa1−yN/AlN)SLs/GaN/(InxGa1−xN/GaN)MQW/GaN heterostructures

International Nuclear Information System (INIS)

Ding Jieqin; Wang Xiaoliang; Xiao Hongling; Wang Cuimei; Yin Haibo; Chen Hong; Feng Chun; Jiang Lijuan

2012-01-01

Highlights: ► We present calculations of carrier confinement characteristics. ► An optimization of In x Ga 1−x N/GaN multiquantum-well (MQW) was made. ► 2DEG sheet carrier density in designed heterostructure is greatly increased. ► Interface roughness and alloy disorder scattering reduced. ► Carrier mobility will be improved in designed heterostructure. - Abstract: We present calculations of carrier confinement characteristics in (Al y Ga 1−y N/AlN)SLs/GaN/(In x Ga 1−x N/GaN)MQW/GaN heterojunction structure in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schrödinger, Poisson, potential and charge balance equations. An optimization of In x Ga 1−x N/GaN multiquantum-well (MQW) was made firstly including thickness of GaN channel, InGaN, and indium composition of In x Ga 1−x N in order to increase carrier density and mobility, and the influence of pairs of AlGaN/AlN superlattices (SLs) and InGaN/GaN MQWs on structure was discussed. Theoretical calculations clearly indicate that the two-dimensional electron gas (2DEG) sheet carrier density in designed heterostructure is greatly increased due to the enhancing of carrier confinement compared to those in conventional AlGaN/GaN one at the similar Al composition. Furthermore, the calculated carrier distribution shows that carrier mobility will be improved by reducing interface roughness and alloy disorder scattering in designed heterostructure.

AlGaN/GaN double-channel HEMT

International Nuclear Information System (INIS)

Quan Si; Hao Yue; Ma Xiaohua; Zheng Pengtian; Xie Yuanbin

2010-01-01

The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. (semiconductor devices)

A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

Science.gov (United States)

Gale, R. P.; Fan, J. C. C.; Turner, G. W.; Chapman, R. L.

1984-01-01

Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

Antisites and anisotropic diffusion in GaAs and GaSb

KAUST Repository

Tahini, H. A.

2013-10-02

The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.

Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang; Li, Guoqiang

2014-01-01

High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In x Ga 1−x As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In x Ga 1−x As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In x Ga 1−x As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In x Ga 1−x As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In x Ga 1−x As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In x Ga 1−x As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates

AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ristic, J.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Calleja, E. [Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Sanchez-Paramo, J.; Calleja, J.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Jahn, U.; Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2002-12-01

This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition. The Al composition trend versus the Al flux is consistent both with the E{sub 2} phonon energy values measured by inelastic light scattering and the luminescence emission peaks position. High quality low dimensional AlGaN/GaN/AlGaN heterostructures with five GaN quantum discs, 2 and 4 nm thick, embedded into the AlGaN columns, were designed in order to study the quantum confinement effects. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Suitable conditions for xylanases activities from Bacillus sp. GA2(1 and Bacillus sp. GA1(6 and their properties for agricultural residues hydrolysis

Directory of Open Access Journals (Sweden)

Sudathip Chantorn

2016-04-01

Full Text Available Bacillus sp. GA2(1 and Bacillus sp. GA1(6 were isolated from soybean field in Khon Kaen province, Thailand. Crude enzymes from both isolates showed the activities of cellulase, xylanase, and mannanase at 37°C for 24 h. The highest xylanase activities of Bacillus sp. GA2(1 and Bacillus sp. GA1(6 were 1.58±0.25 and 0.82±0.16 U/ml, respectively. The relative xylanase activities from both strains were more than 60% at pH 5.0 to 8.0. The optimum temperature of xylanases was 50°C in both strains. The residual xylanase activities from both strains were more than 70% at 60°C for 60 min. Five agricultural wastes (AWs, namely coffee residue, soybean meal, potato peel, sugarcane bagasse, and corn cobs, were used as substrates for hydrolysis properties. The highest reducing sugar content of 101±1.32 µg/ml was obtained from soybean meal hydrolysate produced by Bacillus sp. GA2(1 xylanase.

Magnetic properties, microstructure and corrosion behavior of (Pr,nd)12.6Fe81.3B6.1-type sintered magnets doped with (Pr,nd)30Fe62Ga8

Science.gov (United States)

Ni, Junjie; Zhang, Zhenyu; Liu, Ying; Jia, Zhengfeng; Huang, Baoxu; Yin, Yibin

2016-10-01

NdFeB sintered magnets with (Pr,Nd)30Fe62Ga8 were prepared by a binary powder blending method and their magnetic properties, microstructure and corrosion behavior were investigated. Addition of 3 wt% (Pr,Nd)30Fe62Ga8 was found to be the most effective for improving (BH)max and iHc of the magnets. The increase in both magnetic parameters was related to the alteration in microstructure. However, in other samples the occurrence of micropore and the aggregation of intergranular phases harmed the magnetic properties. Such disadvantageous microstructure features also caused higher corrosion current density, thus decreasing the corrosion resistance of the sample with higher additive content. In addition, the Ga-containing intergranular phases that are more stable than the (Pr,Nd)-rich phase formed in the additive doped magnets, leading to better corrosion resistance of the 3 wt% additives doped sample in comparison with the contrastive sample.

Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

2014-08-01

GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

Science.gov (United States)

Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

2017-07-21

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Czech Higher Education Still at the Crossroads

Czech Academy of Sciences Publication Activity Database

Matějů, Petr; Simonová, Natalie

2003-01-01

Roč. 39, č. 3 (2003), s. 393-410 ISSN 0038-0288 R&D Projects: GA ČR GA403/03/0340 Institutional research plan: CEZ:AV0Z7028912 Keywords : higher education * autonomy of universities * legislation Subject RIV: AO - Sociology, Demography Impact factor: 0.063, year: 2003