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Sample records for higher doping concentration

  1. Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Baojiang [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Tian Chungui; Wang Lei; Sun Li; Chen Chen; Nong Xiaozhen [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Qiao Yingjie, E-mail: qiaoyingjie@hrbeu.edu.cn [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Fu Honggang, E-mail: fuhg@vip.sina.com [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China)

    2012-02-01

    In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 Degree-Sign C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

  2. Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

    Science.gov (United States)

    Jiang, Baojiang; Tian, Chungui; Wang, Lei; Sun, Li; Chen, Chen; Nong, Xiaozhen; Qiao, Yingjie; Fu, Honggang

    2012-02-01

    In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 °C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

  3. Concentration quenching in Nd-doped glasses

    International Nuclear Information System (INIS)

    Stokowski, S.E.; Cook, L.; Mueller, H.; Weber, M.J.

    1984-01-01

    Fluorescence from trivalent Nd in solids is unfortunately quenched by interactions between Nd ions. Thus, laser materials with high Nd concentrations have reduced efficiencies because of this self-quenching, also known as concentration quenching. Nd self-quenching in different crystals and glasses varies considerably. We are therefore investigating this effect in a large number of materials in an effort to: (1) find those materials with long Nd fluorescent lifetimes at high Nd concentrations; and (2) elucidate the basic mechanisms of quenching and how the material structure controls its magnitude. We have concentrated on Nd-doped glasses because they provide a rich variety of structures, albeit complicated by Nd site inhomogeneities, and are easily and quickly made

  4. Effect of iron doping concentration on magnetic properties of ZnO nanoparticles

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.; Layek, Samar; Verma, H.C.

    2009-01-01

    The ZnO:Fe nanoparticles of mean size 3-10 nm were synthesized at room temperature by simple co-precipitation method. The crystallite structure, morphology and size estimation were performed by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM). The wurtzite structure of ZnO gradually degrades with the increasing Fe doping concentration. The magnetic behavior of the nanoparticles of ZnO with varying Fe doping concentration was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong ferromagnetic behavior, however at higher doping percentage of Fe, the ferromagnetic behavior was suppressed and paramagnetic nature was observed. The enhanced antiferromagnetic interaction between neighboring Fe-Fe ions suppressed the ferromagnetism at higher doping concentrations of Fe. Room-temperature Moessbauer spectroscopy investigation showed Fe 3+ nature of the iron atom in ZnO matrix.

  5. Concentration effect of Ca2+ co-doping on Eu3+ doped YPO4 host nanoparticles

    International Nuclear Information System (INIS)

    Yaiphaba, N.; Phaomei, G.; Singh, N.R.

    2013-01-01

    YPO 4 doped Eu nanoparticles have been synthesized by ethylene glycol route at low temperature of 120 ℃. The host is co-doped with different concentration of Ca 2+ (Ca 2+ =0, 2, 3, 10 at.%). The samples were characterized by X-ray powder diffraction (XRD) and photoluminescence spectroscopy. XRD results show that the samples have only single tetragonal structure. Fig. 1 shows the expanded region of (hkl = 200) peak of all the samples in the range 25 to 27 ℃ in 2θ on the same day. The (200) peak position is shifted to higher 2θ from 25.8℃ to 26.2℃ when the concentration of Ca +2 increases upto 10 at.%. The crystallite size also decreases from 32 nm to 20 nm with increase in the concentration of Ca 2+ indicating decrease in the crystallinity of the prepared samples. Photoluminescence excitation spectra results show that the phosphor can be efficiently excited by ultra violet light from 250 to 400 nm including three peaks at 230, 255, and 394 nm. Emission spectra of Ca x Eu 0.05 Y 0.95-x PO 4 (x=0, 0.01, 0.03, 0.10) at 230 nm excitation shows that the intensity of the peak increases upto 1 atom % of Ca (x=0.01) and then decreases due to concentration quenching. These nanoparticles are found to be re-dispersible in water and ethanol and are incorporated into polyvinyl alcohol film homogeneously. This film showed bright red emission. (author)

  6. Effects of Zn doping concentration on resistive switching ...

    Indian Academy of Sciences (India)

    conduction mechanism at low resistance state varies with Zn doping concentration. The dominant .... shows the evolution of RHRS and RLRS in 1000 cycles under a reading voltage of 2 V ... 0.5 exhibited poor fatigue properties. As shown in ...

  7. Effect of nickel doping concentration on structural and magnetic properties of ultrafine diluted magnetic semiconductor ZnO nanoparticles

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    The ZnO:Ni 2+ nanoparticles of mean size 2-12 nm were synthesized at room temperature by the simple co-precipitation method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The wurtzite structure of ZnO gradually degrades with the increasing Ni doping concentration and an additional NiO-associated diffraction peak was observed above 15% of Ni 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Ni 2+ doping concentration was investigated using a vibrating sample magnetometer (VSM). Initially, these nanoparticles showed strong ferromagnetic behavior, however, at higher doping percentage of Ni 2+ , the ferromagnetic behavior was suppressed and paramagnetic nature was observed. The enhanced antiferromagnetic interaction between neighboring Ni-Ni ions suppressed the ferromagnetism at higher doping concentrations of Ni 2+ .

  8. Zero-reabsorption doped-nanocrystal luminescent solar concentrators.

    Science.gov (United States)

    Erickson, Christian S; Bradshaw, Liam R; McDowall, Stephen; Gilbertson, John D; Gamelin, Daniel R; Patrick, David L

    2014-04-22

    Optical concentration can lower the cost of solar energy conversion by reducing photovoltaic cell area and increasing photovoltaic efficiency. Luminescent solar concentrators offer an attractive approach to combined spectral and spatial concentration of both specular and diffuse light without tracking, but they have been plagued by luminophore self-absorption losses when employed on practical size scales. Here, we introduce doped semiconductor nanocrystals as a new class of phosphors for use in luminescent solar concentrators. In proof-of-concept experiments, visibly transparent, ultraviolet-selective luminescent solar concentrators have been prepared using colloidal Mn(2+)-doped ZnSe nanocrystals that show no luminescence reabsorption. Optical quantum efficiencies of 37% are measured, yielding a maximum projected energy concentration of ∼6× and flux gain for a-Si photovoltaics of 15.6 in the large-area limit, for the first time bounded not by luminophore self-absorption but by the transparency of the waveguide itself. Future directions in the use of colloidal doped nanocrystals as robust, processable spectrum-shifting phosphors for luminescent solar concentration on the large scales required for practical application of this technology are discussed.

  9. Cast Stone Formulation At Higher Sodium Concentrations

    International Nuclear Information System (INIS)

    Fox, K. M.; Edwards, T. A.; Roberts, K. B.

    2013-01-01

    concentration in the salt solution reduced the time to peak heat flow, and reducing the amount of slag in the premix increased the time to peak heat flow. These observations may help to describe some of the cured properties of the samples, in particular the differences in compressive strength observed after 28 and 90 days of curing. Samples were cured for at least 28 days at ambient temperature in the laboratory prior to cured properties analyses. The low activity waste form for disposal at the Hanford Site is required to have a compressive strength of at least 500 psi. After 28 days of curing, several of the test mixes had mean compressive strengths that were below the 500 psi requirement. Higher sodium concentrations and higher water to premix ratios led to reduced compressive strength. Higher fly ash concentrations decreased the compressive strength after 28 days of curing. This may be explained in that the cementitious phases matured more quickly in the mixes with higher concentrations of slag, as evidenced by the data for the time to peak heat generation. All of the test mixes exhibited higher mean compressive strengths after 90 days of curing, with only one composition having a mean compressive strength of less than 500 psi. Leach indices were determined for the test mixes for contaminants of interest. The leaching performance of the mixes evaluated in this study was not particularly sensitive to the factors used in the experimental design. This may be beneficial in demonstrating that the performance of the waste form is robust with respect to changes in the mix composition. The results of this study demonstrate the potential to achieve significantly higher waste loadings in Cast Stone and other low temperature, cementitious waste forms. Additional work is needed to elucidate the hydration mechanisms occurring in Cast Stone formulated with highly concentrated salt solutions since these reactions are responsible for determining the performance of the cured waste form. The

  10. Cast Stone Formulation At Higher Sodium Concentrations

    International Nuclear Information System (INIS)

    Fox, K. M.; Roberts, K. A.; Edwards, T. B.

    2014-01-01

    concentration in the salt solution reduced the time to peak heat flow, and reducing the amount of slag in the premix increased the time to peak heat flow. These observations may help to describe some of the cured properties of the samples, in particular the differences in compressive strength observed after 28 and 90 days of curing. Samples were cured for at least 28 days at ambient temperature in the laboratory prior to cured properties analyses. The low activity waste form for disposal at the Hanford Site is required to have a compressive strength of at least 500 psi. After 28 days of curing, several of the test mixes had mean compressive strengths that were below the 500 psi requirement. Higher sodium concentrations and higher water to premix ratios led to reduced compressive strength. Higher fly ash concentrations decreased the compressive strength after 28 days of curing. This may be explained in that the cementitious phases matured more quickly in the mixes with higher concentrations of slag, as evidenced by the data for the time to peak heat generation. All of the test mixes exhibited higher mean compressive strengths after 90 days of curing, with only one composition having a mean compressive strength of less than 500 psi. Leachability indices were determined for the test mixes for contaminants of interest. The leaching performance of the mixes evaluated in this study was not particularly sensitive to the factors used in the experimental design. This may be beneficial in demonstrating that the performance of the waste form is robust with respect to changes in the mix composition. The results of this study demonstrate the potential to achieve significantly higher waste loadings in Cast Stone and other low temperature, cementitious waste forms. Additional work is needed to elucidate the hydration mechanisms occurring in Cast Stone formulated with highly concentrated salt solutions since these reactions are responsible for determining the performance of the cured waste

  11. Cast Stone Formulation At Higher Sodium Concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Fox, K. M. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Roberts, K. A. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Edwards, T. B. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2014-02-28

    concentration in the salt solution reduced the time to peak heat flow, and reducing the amount of slag in the premix increased the time to peak heat flow. These observations may help to describe some of the cured properties of the samples, in particular the differences in compressive strength observed after 28 and 90 days of curing. Samples were cured for at least 28 days at ambient temperature in the laboratory prior to cured properties analyses. The low activity waste form for disposal at the Hanford Site is required to have a compressive strength of at least 500 psi. After 28 days of curing, several of the test mixes had mean compressive strengths that were below the 500 psi requirement. Higher sodium concentrations and higher water to premix ratios led to reduced compressive strength. Higher fly ash concentrations decreased the compressive strength after 28 days of curing. This may be explained in that the cementitious phases matured more quickly in the mixes with higher concentrations of slag, as evidenced by the data for the time to peak heat generation. All of the test mixes exhibited higher mean compressive strengths after 90 days of curing, with only one composition having a mean compressive strength of less than 500 psi. Leachability indices were determined for the test mixes for contaminants of interest. The leaching performance of the mixes evaluated in this study was not particularly sensitive to the factors used in the experimental design. This may be beneficial in demonstrating that the performance of the waste form is robust with respect to changes in the mix composition. The results of this study demonstrate the potential to achieve significantly higher waste loadings in Cast Stone and other low temperature, cementitious waste forms. Additional work is needed to elucidate the hydration mechanisms occurring in Cast Stone formulated with highly concentrated salt solutions since these reactions are responsible for determining the performance of the cured waste

  12. Cast Stone Formulation At Higher Sodium Concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Fox, K. M.; Edwards, T. A.; Roberts, K. B.

    2013-10-02

    concentration in the salt solution reduced the time to peak heat flow, and reducing the amount of slag in the premix increased the time to peak heat flow. These observations may help to describe some of the cured properties of the samples, in particular the differences in compressive strength observed after 28 and 90 days of curing. Samples were cured for at least 28 days at ambient temperature in the laboratory prior to cured properties analyses. The low activity waste form for disposal at the Hanford Site is required to have a compressive strength of at least 500 psi. After 28 days of curing, several of the test mixes had mean compressive strengths that were below the 500 psi requirement. Higher sodium concentrations and higher water to premix ratios led to reduced compressive strength. Higher fly ash concentrations decreased the compressive strength after 28 days of curing. This may be explained in that the cementitious phases matured more quickly in the mixes with higher concentrations of slag, as evidenced by the data for the time to peak heat generation. All of the test mixes exhibited higher mean compressive strengths after 90 days of curing, with only one composition having a mean compressive strength of less than 500 psi. Leach indices were determined for the test mixes for contaminants of interest. The leaching performance of the mixes evaluated in this study was not particularly sensitive to the factors used in the experimental design. This may be beneficial in demonstrating that the performance of the waste form is robust with respect to changes in the mix composition. The results of this study demonstrate the potential to achieve significantly higher waste loadings in Cast Stone and other low temperature, cementitious waste forms. Additional work is needed to elucidate the hydration mechanisms occurring in Cast Stone formulated with highly concentrated salt solutions since these reactions are responsible for determining the performance of the cured waste form. The

  13. Cast Stone Formulation At Higher Sodium Concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Fox, K. M.; Roberts, K. A.; Edwards, T. B.

    2013-09-17

    concentration in the salt solution reduced the time to peak heat flow, and reducing the amount of slag in the premix increased the time to peak heat flow. These observations may help to describe some of the cured properties of the samples, in particular the differences in compressive strength observed after 28 and 90 days of curing. Samples were cured for at least 28 days at ambient temperature in the laboratory prior to cured properties analyses. The low activity waste form for disposal at the Hanford Site is required to have a compressive strength of at least 500 psi. After 28 days of curing, several of the test mixes had mean compressive strengths that were below the 500 psi requirement. Higher sodium concentrations and higher water to premix ratios led to reduced compressive strength. Higher fly ash concentrations decreased the compressive strength after 28 days of curing. This may be explained in that the cementitious phases matured more quickly in the mixes with higher concentrations of slag, as evidenced by the data for the time to peak heat generation. All of the test mixes exhibited higher mean compressive strengths after 90 days of curing, with only one composition having a mean compressive strength of less than 500 psi. Leach indices were determined for the test mixes for contaminants of interest. The leaching performance of the mixes evaluated in this study was not particularly sensitive to the factors used in the experimental design. This may be beneficial in demonstrating that the performance of the waste form is robust with respect to changes in the mix composition. The results of this study demonstrate the potential to achieve significantly higher waste loadings in Cast Stone and other low temperature, cementitious waste forms. Additional work is needed to elucidate the hydration mechanisms occurring in Cast Stone formulated with highly concentrated salt solutions since these reactions are responsible for determining the performance of the cured waste form. The

  14. Trace element concentrations in higher fungi

    International Nuclear Information System (INIS)

    Byrne, A.R.; Ravnik, V.; Kosta, L.

    1976-01-01

    The concentrations of ten trace elements, As, Br, Cd, Cu, Hg, I, Mn, Se, Zn and V, have been determined in up to 27 species of higher fungi from several sites in Slovenia, Yugoslavia. Analyses were based on destructive neutron activation techniques. Data are presented and compared with the concentrations found in soils. Previously values were non-existent or scanty for these elements, so that the data represent typical levels for basidiomycetes. In addition to confirming high levels of mercury in many species, the survey also found that cadmium is accumulated to a surprising extent by most fungi, the average value being 5 ppm. Among other accumulations found was bromine by the genus Amanita, and selenium by edible Boletus. Correlation analysis between all pairs of trace elements gave values for r of from 0.75 to 0.43 for 7 pairs (Cu and Hg, 0.75; Se and As, 0.69). As well as these features of biochemical interest, the values found and the pattern of accumulation suggest potential uses of fungi in environmental studies

  15. Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2013-11-07

    Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10{sup 21} and 2.2 × 10{sup 21} cm{sup −3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y = 0.035 varies approximately as T{sup −3/2} above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K.

  16. Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

    International Nuclear Information System (INIS)

    Chen, Xi; Salta, Daniel; Zhang, Libin; Weathers, Annie; Zhou, Jianshi; Goodenough, John B.; Shi, Li

    2013-01-01

    Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10 21 and 2.2 × 10 21  cm −3 measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 with y = 0.035 varies approximately as T −3/2 above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K

  17. Influence of Ag doping concentration on structural and optical properties of CdS thin film

    International Nuclear Information System (INIS)

    Kumar, Pragati; Saxena, Nupur; Gupta, Vinay; Agarwal, Avinash

    2015-01-01

    This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag 2 O or Ag 2 S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration

  18. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    International Nuclear Information System (INIS)

    Nasir, M. F.; Zainol, M. N.; Hannas, M.; Mamat, M. H.; Rusop, Mohamad; Rahman, S. A.

    2016-01-01

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10"3 Ωcm"−"1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  19. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-07-06

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  20. Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

    Directory of Open Access Journals (Sweden)

    Manjula N.

    2015-12-01

    Full Text Available Thin films of manganese-doped cadmium oxide (CdO:Mn with different Mn-doping levels (0, 1, 2, 3 and 4 at.% were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1 preferential orientation. Mn-doping causes a slight shift of the (1 1 1 diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

  1. Influence of nitrogen-doping concentration on the electronic structure of CuAlO{sub 2} by first-principles studies

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei-wei, E-mail: zmliuwwliu@126.com; Chen, Hong-xia; Liu, Cheng-lin; Wang, Rong

    2017-02-05

    Effect of N doping concentration on the electronic structure of N-doped CuAlO{sub 2} was investigated by density functional theory based on generalized-gradient approximation plus orbital potential. Lattice parameters a and c both increase with increasing N-doping concentration. Formation energies increase with increasing N doping concentration and all N-doped CuAlO{sub 2} were structurally stable. The calculated band gaps for N-doped CuAlO{sub 2} narrowed compared to pure CuAlO{sub 2}, which was attributed to the stronger hybridization between Cu-3d and N-2p states and the downward shift of Cu-3p states in conduction bands. The higher the N-doping concentration is, the narrower the band gap. N-doped CuAlO{sub 2} shows a typical p-type semiconductor. The band structure changed from indirect to direct after N doping which will benefit the application of the CuAlO{sub 2} materials in optoelectronic and electronic devices. - Highlights: • Electronic structures of CuAlO{sub 2} with different N content were investigated. • The higher the N-doping concentration is, the narrower the band gap. • All the CuAlO{sub 2} with different N content were structurally stable. • The N-doped CuAlO{sub 2} shows a typical p-type semiconductor characteristic.

  2. Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Almeida, E.C. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil)]. E-mail: erica@las.inpe.br; Diniz, A.V. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Trava-Airoldi, V.J. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Ferreira, N.G. [CTA-Divisao de Materiais, Sao Jose dos Campos, SP 12228-904 (Brazil)

    2005-08-01

    Doped diamond films have been deposited on carbon fibers (felt) obtained from polyacrylonitrile at different levels of boron doping. For a successful coating of the fibers, an ultrasonic pretreatment in a bath of diamond powder dissolved in hexane was required. Films were grown on both sample sides, simultaneously, by hot filament-assisted chemical vapour deposition technique at 750 deg. C from a 0.5% H{sub 2}/CH{sub 4} mixture at a total pressure of 6.5 x 10{sup 3} Pa. Boron was obtained from H{sub 2} forced to pass through a bubbler containing B{sub 2}O{sub 3} dissolved in methanol. The doping level studied corresponds to films with acceptor concentrations in the range of 6.5 x 10{sup 18} to 1.5 x 10{sup 21} cm{sup -} {sup 3}, obtained from Mott-Schottky plots. Scanning electron microscopy analyses evidenced fibers totally covered with high quality polycrystalline boron-doped diamond film, also confirmed by Raman spectroscopy spectra. Diamond electrodes grown on carbon fibers demonstrated similar electrochemical behavior obtained from films on Si substrate, for ferri/ferrocyanide redox couple as a function of boron content. The boron content influences electrochemical surface area. A lower boron concentration provides a higher growth rate that results in a higher surface area.

  3. The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT).

    Science.gov (United States)

    Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen

    2016-11-22

    The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La 3+ donor-doped, Fe 3+ acceptor-doped and La 3+ /Fe 3+ -co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

  4. The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT

    Directory of Open Access Journals (Sweden)

    Christoph Slouka

    2016-11-01

    Full Text Available The different properties of acceptor-doped (hard and donor-doped (soft lead zirconate titanate (PZT ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La3+ donor-doped, Fe3+ acceptor-doped and La3+/Fe3+-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

  5. Influence of Ag doping concentration on structural and optical properties of CdS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Pragati, E-mail: pkumar.phy@gmail.com [Department of Physics, Bareilly College, Bareilly, 243 005, Uttar Pradesh (India); Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007 (India); Saxena, Nupur; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007 (India); Agarwal, Avinash [Department of Physics, Bareilly College, Bareilly, 243 005, Uttar Pradesh (India)

    2015-05-15

    This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag{sub 2}O or Ag{sub 2}S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration.

  6. The doping concentration and physical properties measurement of silicon water using tera hertz wave

    International Nuclear Information System (INIS)

    Park, Sung Hyeon; Oh, Gyung Hwan; Kim, Hak Sung

    2017-01-01

    In this study, a tera hertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of 30° were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from 10"1"4 to 10"1"8 in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer

  7. The doping concentration and physical properties measurement of silicon water using tera hertz wave

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sung Hyeon; Oh, Gyung Hwan; Kim, Hak Sung [Dept. of Mechanical Convergence Engineering, Hanyang University, Seoul(Korea, Republic of)

    2017-02-15

    In this study, a tera hertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of 30° were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from 10{sup 14} to 10{sup 18} in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer.

  8. Effect of ZDDP concentration on the thermal film formation on steel, hydrogenated non-doped and Si-doped DLC

    Energy Technology Data Exchange (ETDEWEB)

    Akbari, S. [Laboratory for Tribology and Interface Nanotechnology, University of Ljubljana, Ljubljana (Slovenia); Kovač, J. [Jozef Stefan Institute, Jamova 19, 1000 Ljubljana (Slovenia); Kalin, M., E-mail: mitjan.kalin@tint.fs.uni-lj.si [Laboratory for Tribology and Interface Nanotechnology, University of Ljubljana, Ljubljana (Slovenia)

    2016-10-15

    Highlights: • The effect of the ZDDP concentrations onto the steel, H-DLC and Si-DLC surfaces is investigated. • ZDDP film structure on the DLC coatings is different from steel. • Different concentrations of ZDDP do not affect the final chemical structure of the ZDDP film on any of the studied surfaces. • The thickness of the thermal film is linear with the concentration for a given surface. • The reactivity of the ZDDP film is higher on the steel surface than on the DLC coatings. - Abstract: This work focuses on the ZDDP concentration (1, 5 and 20 wt%) to form a ZDDP film on surfaces during static thermal tests at 150 °C. Silicon-doped and hydrogenated DLC coatings, as well as steel as reference, were studied using Attenuated Total Reflection-Fourier Transform Infrared (ATR-FTIR) spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The results show that, on the three surfaces, the structure of the ZDDP thermal film consists of identical groups of pyrophosphate and zinc oxide, while the sulphuric groups are dissimilar. On the steel surface, the sulphuric part consists of a mixture of organic sulphide and sulphohydryl groups, but on H-DLC and Si-DLC only organic sulphide groups are found; there are no sulphohydryl groups. Moreover, both ATR-FTIR and XPS show that different concentrations of ZDDP do not affect the final chemical structure of the ZDDP thermal film on any of the studied surfaces. In addition, the XPS results show that the thickness of the thermal film is linear with the concentration for the whole range from 1 to 20 wt%, supporting also its uniform chemical structure. These thicknesses further show that the reactivity of the ZDDP film is higher on the steel surface than on the DLC coatings.

  9. The effect of DCJTB doping concentration in PVK on the chromatic coordinate of electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, F J; Xu, Z; Zhao, S L; Wang, L W; Yuan, G C [Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education (China); Zhao, D W [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)], E-mail: fjzhang@bjtu.edu.cn

    2008-05-15

    The dominant mechanism of electroluminescence (EL) from 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) doped in poly-(N-vinyl-carbazole) (PVK) system was demonstrated to be a charge carrier trapped by DCJTB molecular rather than Foerster energy transfer from PVK to DCJTB. The chromatically coordinate EL emission of PVK:DCJTB changes from (0.41, 0.31) to (0.67, 0.31) with an increase in DCJTB doping concentration. The emission peak in DCJTB shows red-shift and the shoulder emission peak at 656 nm becomes stronger as the doping concentration increases. The effect of DCJTB doping concentration on EL spectra is attributed to strong dipole-dipole interaction between the DCJTB molecule with an increase in doping concentration.

  10. Effect of CSA Concentration on the Ammonia Sensing Properties of CSA-Doped PA6/PANI Composite Nanofibers

    Directory of Open Access Journals (Sweden)

    Zengyuan Pang

    2014-11-01

    Full Text Available Camphor sulfonic acid (CSA-doped polyamide 6/polyaniline (PA6/PANI composite nanofibers were fabricated using in situ polymerization of aniline under different CSA concentrations (0.02, 0.04, 0.06, 0.08 and 0.10 M with electrospun PA6 nanofibers as templates. The structural, morphological and ammonia sensing properties of the prepared composite nanofibers were studied using scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FT-IR, four-point probe techniques, X-ray diffraction (XRD and a home-made gas sensing test system. All the results indicated that the CSA concentration had a great influence on the sensing properties of CSA-doped PA6/PANI composite nanofibers. The composite nanofibers doped with 0.02 M CSA showed the best ammonia sensing properties, with a significant sensitivity toward ammonia (NH3 at room temperature, superior to that of the composite nanofibers doped with 0.04–0.10 mol/L CSA. It was found that for high concentrations of CSA, the number of PANI–H+ reacted with NH3 would not make up a high proportion of all PANI–H+ within certain limits. As a result, within a certain range even though higher CSA-doped PA6/PANI nanofibers had better conductivity, their ammonia sensing performance would degrade.

  11. Effect of ZDDP concentration on the thermal film formation on steel, hydrogenated non-doped and Si-doped DLC

    Science.gov (United States)

    Akbari, S.; Kovač, J.; Kalin, M.

    2016-10-01

    This work focuses on the ZDDP concentration (1, 5 and 20 wt%) to form a ZDDP film on surfaces during static thermal tests at 150 °C. Silicon-doped and hydrogenated DLC coatings, as well as steel as reference, were studied using Attenuated Total Reflection-Fourier Transform Infrared (ATR-FTIR) spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The results show that, on the three surfaces, the structure of the ZDDP thermal film consists of identical groups of pyrophosphate and zinc oxide, while the sulphuric groups are dissimilar. On the steel surface, the sulphuric part consists of a mixture of organic sulphide and sulphohydryl groups, but on H-DLC and Si-DLC only organic sulphide groups are found; there are no sulphohydryl groups. Moreover, both ATR-FTIR and XPS show that different concentrations of ZDDP do not affect the final chemical structure of the ZDDP thermal film on any of the studied surfaces. In addition, the XPS results show that the thickness of the thermal film is linear with the concentration for the whole range from 1 to 20 wt%, supporting also its uniform chemical structure. These thicknesses further show that the reactivity of the ZDDP film is higher on the steel surface than on the DLC coatings.

  12. Concentration depolarization of luminescence of Eu3+-doped glasses

    International Nuclear Information System (INIS)

    Bodunov, E.N.; Lebedev, V.P.; Malyshev, V.A.; Przheuskij, A.K.

    1989-01-01

    Experimental study of concentrational depolarization luminescence (CDL) of phosphate and germanate glasses, containing Eu 3+ ions, has been carried out. On the basis of three-body self-consistent approximation the theory of CDL is conceived, which takes into account Eu-Eu interaction of higher multipolarities. By comparing the theory with the experiment energy transfer radii for Eu-Eu dipole-dipole, dipole-quadrupole and quadrupole-quadrupole interactions are determined. The attempt to discriminate Eu-Eu interaction types in the studied range of Eu 3+ ion concentration change has failed owing to law accuracy of luminescence emittance anisotropy measurement

  13. Solution-processed organic thermoelectric materials exhibiting doping-concentration-dependent polarity.

    Science.gov (United States)

    Hwang, Sunbin; Potscavage, William J; Yang, Yu Seok; Park, In Seob; Matsushima, Toshinori; Adachi, Chihaya

    2016-10-26

    Recent progress in conducting polymer-based organic thermoelectric generators (OTEGs) has resulted in high performance due to high Seebeck coefficient, high electrical conductivity (σ), and low thermal conductivity obtained by chemically controlling the materials's redox levels. In addition to improving the properties of individual OTEGs to obtain high performance, the development of solution processes for the fabrication of OTEG modules is necessary to realize large thermoelectric voltage and low-cost mass production. However, the scarcity of good candidates for soluble organic n-type materials limits the use of π-leg module structures consisting of complementary elements of p- and n-type materials because of unbalanced transport coefficients that lead to power losses. In particular, the extremely low σ of n-type materials compared with that of p-type materials is a serious challenge. In this study, poly(pyridinium phenylene) (P(PymPh)) was tested as an n-type semiconductor in solution-processed OTEGs, and the carrier density was controlled by a solution-based chemical doping process using the dopant sodium naphthalenide, a well-known reductant. The electronic structures and doping mechanism of P(PymPh) were explored based on the changes in UV-Vis-IR absorption, ultraviolet photoelectron, and X-ray photoelectron spectra. By controlling the dopant concentration, we demonstrate a maximum n-type power factor of 0.81 μW m -1 K -2 with high σ, and at higher doping concentrations, a switch from n-type to p-type TE operation. This is one of the first cases of a switch in polarity just by increasing the concentration of the reductant and may open a new route for simplified fabrication of complementary organic layers.

  14. The dependence of Raman scattering on Mg concentration in Mg-doped GaN grown by MBE

    International Nuclear Information System (INIS)

    Flynn, Chris; Lee, William

    2014-01-01

    Magnesium-doped GaN (GaN:Mg) films having Mg concentrations in the range 5 × 10 18 –5 × 10 20 cm −3 were fabricated by molecular beam epitaxy. Raman spectroscopy was employed to study the effects of Mg incorporation on the positions of the E 2 and A 1 (LO) lines identifiable in the Raman spectra. For Mg concentrations in excess of 2 × 10 19 cm −3 , increases in the Mg concentration shift both lines to higher wave numbers. The shifts of the Raman lines reveal a trend towards compressive stress induced by incorporation of Mg into the GaN films. The observed correlation between the Mg concentration and the Raman line positions establish Raman spectroscopy as a useful tool for optimizing growth of Mg-doped GaN. (papers)

  15. Suppression of concentration quenching of Er-related luminescence in Er-doped GaN

    International Nuclear Information System (INIS)

    Chen Shaoqiang; Tomita, Shigeo; Kudo, Hiroshi; Akimoto, Katsuhiro; Dierre, Benjamin; Lee, Woong; Sekiguchi, Takashi

    2010-01-01

    Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN.

  16. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  17. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-05

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  18. Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning

    Science.gov (United States)

    Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong

    2014-07-01

    The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.

  19. Optimum Er concentration for in situ doped GaN visible and infrared luminescence

    International Nuclear Information System (INIS)

    Lee, D. S.; Heikenfeld, J.; Steckl, A. J.; Hommerich, U.; Seo, J. T.; Braud, A.; Zavada, J.

    2001-01-01

    GaN thin films have been doped with varying Er concentrations (0.01--10 at.%) during molecular-beam-epitaxy growth. As expected, the visible and infrared (IR) emissions, from photoluminescence (PL) and electroluminescence (EL), are a strong function of Er concentration. We report on the determination of an optimum Er doping level for PL and EL intensity. Secondary ion mass spectroscopy and Rutherford backscattering measurements showed that the Er concentration in GaN increased exponentially with Er cell temperature. PL and EL intensity of green emission at 537 and 558 nm, due to Er 4f--4f inner shell transitions, exhibited a maximum at ∼1 at.% Er. IR PL intensity at 1.54 μm, due to another Er transition, revealed the same maximum for ∼1 at.% Er concentration. PL lifetime measurements at 537 nm showed that samples with Er concentration <1 at.% had a lifetime of ∼5 μs. For Er concentration ≥1 at.%, the lifetime decreased rapidly to values below 1 μs. This concentration quenching is believed to be due to a combination of Er cross relaxation and energy transfer to GaN defects, eventually followed by precipitation. This conclusion is supported by x-ray diffraction measurements. As a result, we have determined that the optimum Er doping concentration into GaN is ∼1 at.%. Copyright 2001 American Institute of Physics

  20. Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Dhananjay K., E-mail: dhananjay@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Fateixa, Sara [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Hortigüela, María J. [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Vidyasagar, Reddithota [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Otero-Irurueta, Gonzalo [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Nogueira, Helena I.S. [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Singh, Manoj Kumar [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Kholkin, Andrei, E-mail: kholkin@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2017-05-15

    Tuning the band-gap of graphene is a current need for real device applications. Copper (Cu) as a substrate plays a crucial role in graphene deposition. Here we report the fabrication of in-situ nitrogen (N) doped graphene via chemical vapor deposition (CVD) technique and the effect of Cu substrate thickness on the growth mechanism. The ratio of intensities of G and D peaks was used to evaluate the defect concentration based on local activation model associated with the distortion of the crystal lattice due to incorporation of nitrogen atoms into graphene lattice. The results suggest that Cu substrate of 20 µm in thickness exhibits higher defect density (1.86×10{sup 12} cm{sup −2}) as compared to both 10 and 25 µm thick substrates (1.23×10{sup 12} cm{sup −2} and 3.09×10{sup 11} cm{sup −2}, respectively). Furthermore, High Resolution -X-ray Photoelectron Spectroscopy (HR-XPS) precisely affirms ~0.4 at% of nitrogen intercalations in graphene. Our results show that the substitutional type of nitrogen doping dominates over the pyridinic configuration. In addition, X-ray diffraction (XRD) shows all the XRD peaks associated with carbon. However, the peak at ~24° is suppressed by the substrate peaks (Cu). These results suggest that nitrogen atoms can be efficiently incorporated into the graphene using thinner copper substrates, rather than the standard 25 µm ones. This is important for tailoring the properties by graphene required for microelectronic applications.

  1. Effect of dye-doped concentration on the charge carrier recombination in molecularly doped organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Chen Jiangshan; Ma Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Changchun 130022 (China)

    2006-05-21

    The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6- (1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant in tris(8-hydroxyquinoline) aluminium (Alq{sub 3}) on the charge carrier recombination was studied by transient electroluminescence (EL). The electron-hole recombination coefficient ({gamma}) was determined from the long-time component of the temporal decay of the EL intensity after a rectangular voltage pulse was turned off. It was found that the coefficient monotonically decreased with an increase in the DCJTB-doping concentration. The monotonic decrease is attributed to concentration quenching on the excitons and coincided well with the reduction of the EL efficiency.

  2. Enhanced optical and electrical properties of Y-doped ZnO nanoparticles having different Y concentrations

    Science.gov (United States)

    Üzar, Neslihan

    2018-04-01

    In this study, undoped ZnO and yttrium (Y)-doped ZnO (YZO) nanoparticles having different Y dopant concentrations (Zn1- x Y x O; x = 0.005, 0.01, 0.015, 0.02) were successfully synthesized by sol-gel dip-coating method. Structural characterizations of the obtained samples were examined with scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analyses. SEM analysis shows that the synthesized nanoparticles are mostly dot-like structures. The sizes of nanostructures decrease with increasing Y-doping concentration up to 2 mol % Y and XRD results show that all of samples have wurtzite hexagonal structure of ZnO with (002) c-plane orientation. According to EDS results pure YZO samples are obtained. Optical transmittances of all samples were investigated in the range of 350-750 nm at room temperature. The average optical transmittances of YZO samples in the visible region are approximately over 90%, but the transmittance starts to decrease for Zn0.98Y0.02O sample. Also, it was observed that the optical transmittances of Y-doped samples are higher than that of undoped ZnO. The electrical properties of YZO samples were obtained by resistance measurements at room temperature. The resistivity of samples was found to be 2.25 × 10-3, 1.43 × 10-3, 7.8 × 10-3, and 1.3 × 10-3 Ω-cm for Zn0.995Y0.005O, Zn0.99Y0.01O, Zn0.985Y0.015O and Zn0.98Y0.02O, respectively. All these results show that surface, structural, electrical and optical properties of ZnO samples can be improved with doping Y up to 2 mol % concentrations.

  3. The effects of Tb 3+ doping concentration on luminescence ...

    Indian Academy of Sciences (India)

    BaF2 phosphor; crystal structure; luminescence properties; X-ray diffraction; concentration quenching. 1. Introduction ... reported that the particle size, shape, crystallinity, etc., sig- nificantly ... Figure 3 shows the excitation and emission spectra of sam- ple with 4 ... gies obtained earlier.9,10 The ground term of the Tb3+ ion is.

  4. Dependence of the up-conversion emission of Li+ co-doped Y2O3:Er3+ films with dopant concentration

    International Nuclear Information System (INIS)

    Meza-Rocha, A.N.; Huerta, E.F.; Caldiño, U.; Carmona-Téllez, S.; Bettinelli, M.; Speghini, A.; Pelli, S.; Righini, G.C.

    2015-01-01

    The effect of dopant concentration on the up-conversion emission, and in particular on the Er 3+ related green and red emissions of spray pyrolysis deposited films of Y 2 O 3 :Er 3+ co-doped with Li + , is reported. Er 3+ concentrations in the films in the range of 1.1–5.6 at% (1.5–14 at% Er 3+ in the spraying solution) were studied, as well as the effect of co-doping them with Li + . Large concentrations of Er 3+ favor the red emission, especially for contents higher than 10 at% in the spraying solution. Li + co-doping improves the green and red emissions up to 365 and 171 times, respectively, depending on the Er 3+ and Li + concentrations. - Highlights: Up-converting Y 2 O 3 :Er 3+ and Y 2 O 3 :Er 3+ , Li + films were deposited by spray pyrolysis. The effect of Li + co-doping on the green and red UC Er 3+ emission is reported. Li + co-doping improves the green and red emission up to 365 and 171 times

  5. Diffusion of ion-implanted B in high concentration P- and As-doped silicon

    International Nuclear Information System (INIS)

    Fair, R.B.; Pappas, P.N.

    1975-01-01

    The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As was studied by correlating numerical profile calculations with profiles determined by secondary-ion mass spectrometry (SIMS). Retarded B diffusion is observed in both As- and P-doped Si, consistent with the effect of the local Fermi-level position in the Si band gap on B diffusivity, D/sub B/. It is shown that D/sub B/ is linearly dependent on the free hole concentration, p, over the range 0.1 less than p/n/sub ie/ less than 30, where n/sub ie/ is the effective intrinsic electron concentration. This result does not depend on the way in which the background dopant has been introduced (implantation predeposition or doped-oxide source), nor the type of dopant used (P or As). (U.S.)

  6. Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.

    2018-01-01

    In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.

  7. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

    Science.gov (United States)

    Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

    2015-12-01

    The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

  8. Concentration and wavelength dependent frequency downshifting photoluminescence from a Tb3+ doped yttria nano-phosphor: A photochromic phosphor

    Science.gov (United States)

    Yadav, Ram Sagar; Rai, Shyam Bahadur

    2018-03-01

    In this article, the Tb3+ doped Y2O3 nano-phosphor has been synthesized through solution combustion method. The structural measurements of the nano-phosphor have been carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques, which reveal nano-crystalline nature. The Fourier transform infrared (FTIR) measurements reveal the presence of different molecular species in the nano-phosphor. The UV-Vis-NIR absorption spectrum of the nano-phosphor shows large number of bands due to charge transfer band (CTB) and 4f-4f electronic transitions of Tb3+ ion. The Tb3+ doped Y2O3 nano-phosphor emits intense green downshifting photoluminescence centered at 543 nm due to 5D4 → 7F5 transition on excitation with 350 nm. The emission intensity of the nano-phosphor is optimized at 1.0 mol% concentration of Tb3+ ion. When the as-synthesized nano-phosphor is annealed at higher temperature the emission intensity of the nano-phosphor enhances upto 5 times. The enhancement in the emission intensity is due to an increase in crystallinity of the nano-phosphor, reduction in surface defects and optical quenching centers. The CIE diagram reveals that the Tb3+ doped nano-phosphor samples show the photochromic nature (color tunability) with a change in the concentration of Tb3+ ion and excitation wavelength. The lifetime measurement indicates an increase in the lifetime for the annealed sample. Thus, the Tb3+ doped Y2O3 nano-phosphor may be used in photochromic displays and photonic devices.

  9. Higher milk fat content is associated with higher 25-hydroxyvitamin D concentration in early childhood.

    Science.gov (United States)

    Vanderhout, Shelley M; Birken, Catherine S; Parkin, Patricia C; Lebovic, Gerald; Chen, Yang; O'Connor, Deborah L; Maguire, Jonathon L

    2016-05-01

    Current guidelines for cow's milk consumption in children older than age 2 years suggest 1% or 2% milk to reduce the risk of obesity. Given that milk is the main dietary source of vitamin D for North American children and that vitamin D is fat soluble, we hypothesized 25-hydroxyvitamin D (25(OH)D) concentration to be positively associated with the fat content of milk. The objective was to determine the relationship between the fat content of milk consumed and the serum 25(OH)D concentration; our secondary objective was to explore the role that the volume of milk consumed played in this relationship. We completed a cross-sectional study of children aged 12-72 months in the TARGetKids! research network. Multivariable linear regression was used to test the association between milk fat content and child 25(OH)D, adjusted for clinically relevant covariates. The interaction between volume of milk and fat content was examined. Two thousand eight hundred fifty-seven children were included in the analysis. The fat content of milk was positively associated with 25(OH)D (p = 0.03), and the interaction between the volume of milk consumed and the milk fat content was statistically significant (p = 0.005). Children who drank 1% milk needed 2.46 cups (95% confidence interval (CI) 2.38-2.54) of milk to have a 25(OH)D concentration similar to that of children who drank 1 cup of homogenized milk (3.25% fat). Children who consumed 1% milk had 2.05 (95% CI 1.73-2.42) times higher odds of having a 25(OH)D concentration <50 nmol/L compared with children who consumed homogenized milk. In conclusion, recommendations for children to drink lower-fat milk (1% or 2%) may compromise serum 25(OH)D levels and may require study to ensure optimal childhood health.

  10. Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Turgut, Güven; Koçyiğit, Adem; Sönmez, Erdal

    2015-01-01

    The Pr and Ta separately doped FTO (10 at.% F incorporated SnO 2 ) films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO (FTO) films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction (XRD) measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has (200) preferential orientation, but this orientation changes to (211) direction with Pr and Ta doping ratio increasing. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible (UV-Vis) spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications. (paper)

  11. Effects of Mn, Cu doping concentration to the properties of magnetic nanoparticles and arsenic adsorption capacity in wastewater

    International Nuclear Information System (INIS)

    Thi, Tran Minh; Trang, Nguyen Thi Huyen; Van Anh, Nguyen Thi

    2015-01-01

    Highlights: • Investigation the decrease of saturate magnetic moment of Fe 3 O 4 over time. • Substitution of Mn, Cu ions into Fe position to create stable properties of materials. • Investigate the surface and mesopore structure of nanoparticles. • The arsenic adsorption capacity of Cu doped Fe 3 O 4 nanomaterials is higher than of Fe 3 O 4 and Mn doped Fe 3 O 4 nanomaterials. - Abstract: The research results of Fe 3 O 4 and Mn, Cu doped Fe 3 O 4 nanomaterials synthesized by a chemical method for As(III) wastewater treatment are presented in this paper. The X-ray diffraction patterns and transmission electron microscopy images showed that samples had the cubic spinel structure with the grain sizes were varied from 9.4 nm to 18.1 nm. The results of vibrating sample magnetometer measurements at room temperature showed that saturation magnetic moments of Fe 1−x Cu x Fe 2 O 4 and Fe 1−x Mn x Fe 2 O 4 samples decreased from 65.9 emu/g to 53.2 emu/g and 65.9 emu/g to 61.5 emu/g, respectively, with the increase of Cu, Mn concentrations from 0.0 to 0.15. The nitrogen adsorption–desorption isotherm of a typical Fe 3 O 4 sample at 77 K was studied in order to investigate the surface and porous structure of nanoparticles by BET method. The specific surface area of Fe 3 O 4 magnetic nanoparticles was calculated about of 100.2 m 2 /g. The pore size distribution of about 15–20 nm calculated by the BJH (Barrett, Joyner, and Halendar) method at a relative pressure P/P 0 of about 1. Although the saturation magnetic moments of samples decreased when the increase of doping concentration, but the arsenic adsorption capacity of Cu doped Fe 3 O 4 nanoparticles is better than that of Fe 3 O 4 and Mn doped Fe 3 O 4 nanoparticles in a solution with pH = 7. In the solution with a pH > 14, the arsenic adsorption of magnetic nanoparticles is insignificant

  12. Dopant concentration dependent magnetism of Cu-doped TiO{sub 2} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Anitha, B.; Khadar, M. Abdul, E-mail: mabdulkhadar@rediffmail.com [University of Kerala, Centre for Nanoscience and Nanotechnology (India)

    2016-06-15

    Undoped and Cu-doped nanocrystals of TiO{sub 2} having the size range of 8–11 nm were synthesized by peroxide gel method. XRD analysis using Rietveld refinement confirmed anatase phase with a small percentage of rutile content for undoped TiO{sub 2} nanocrystals while a pure anatase phase with preferential growth along [004] direction was observed for nanocrystals of Cu-doped TiO{sub 2}. Variation in the intensity ratios of the XRD peaks of the doped samples compared to that of the undoped sample offered an evidence for the substitutional incorporation of Cu ions in the TiO{sub 2} lattice. The preferential growth of the nanocrystals along the [004] direction was verified using HRTEM analysis. Cu doping extended the optical absorption edge of TiO{sub 2} nanocrystals to the visible spectral region and caused a blue shift and broadening of the E{sub g} (1) Raman active mode of anatase TiO{sub 2}. Undoped TiO{sub 2} sample showed a weak ferromagnetism superimposed on a diamagnetic background while Cu-doped TiO{sub 2} samples exhibited a weak ferromagnetism in the low-field region with a paramagnetic component in the high-field region. The magnetic moment exhibited by the doped samples is interpreted as the resultant of a weak ferromagnetic moment in the low-field region arising from the presence of defects near the surface of TiO{sub 2} nanoparticles or from the interaction of the substituted Cu ions with the oxygen vacancies, and the paramagnetic contribution from the increased Cu dopant concentration near the surface of the particles arising from self-purification mechanism.

  13. Impact of concentration and Si doping on the properties and phase transformation behavior of nanocrystalline alumina prepared via solvothermal synthesis

    International Nuclear Information System (INIS)

    Mekasuwandumrong, Okorn; Tantichuwet, Panutin; Chaisuk, Choowong; Praserthdam, Piyasan

    2008-01-01

    Solvothermal reaction of 20 g aluminum isopropoxide (AIP) in mineral oil at 300 deg. C for 2 h gave χ-alumina showing high thermal stability while the reaction with higher amounts of starting AIP (30 and 40 g) contributed contamination of pseudoboehmite. The χ-alumina thus obtained directly transformed into α-alumina completely at approximately 1400 deg. C bypassing the other transition alumina phases whereas some part of the contaminated product transformed to γ-alumina through θ-alumina and finally α-alumina. When silicon was doped in the alumina matrix (5, 10, 20 and 50 at.%) using tetraethylorthosilicate as the silicon (Si) precursor, χ-alumina was still observed without any contaminations at low concentration doping (5-20 at.%). Amorphous structure was obtained by doping 50 at.% Si. The phase transformation temperature was shifted to the high temperature after loading the Si. The α-phase transformation did not go to completion even after calcinations at 1500 deg. C. This could be due to the incorporation of Si atom in alumina lattice forming SiO 2 -Al 2 O 3 solid solution

  14. Scintillation characteristic of In, Ga-doped ZnO thin films with different dopant concentrations

    International Nuclear Information System (INIS)

    Fujimoto, Yutaka; Yanagida, Takayuki; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira; Sekiwa, Hideyuki

    2011-01-01

    The present study describes the first detailed evaluation of the rise and the decay time of scintillation phenomenon in In 3+ - and Ga 3+ -doped ZnO thin films with different dopant concentrations. In 3+ -(25, 55, and 141 ppm) and Ga 3+ -(33, 67, 333, and 1374 ppm) doped ZnO films were grown by the Liquid Phase Epitaxy (LPE) method. The characterization was performed using the pulse X-ray equipped streak camera system. Both the rise and the decay times were shortened considerably with increasing content of In 3+ and Ga 3+ in the films. However, the scintillation light yield under 241 Am α-ray excitation reduced when concentration of In 3+ and Ga 3+ in the ZnO films was high. (author)

  15. Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers

    NARCIS (Netherlands)

    George, S.D.; Dilna, S.; Prasanth, R.; Radhakrishnan, P.; Vallabhan, C.P.G.; Nampoori, V.P.N.

    2003-01-01

    We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho's theory of the PA effect. The

  16. Polymeric Luminescent Compositions Doped with Beta-Diketonates Boron Difluoride as Material for Luminescent Solar Concentrator

    Science.gov (United States)

    Khrebtov, A. A.; Fedorenko, E. V.; Reutov, V. A.

    2017-11-01

    In this paper we investigated polymeric luminescent compositions based on polystyrene doped with beta diketonates boron difluoride. Transparent films with effective absorption in the ultraviolet and blue regions of the spectrum were obtained. Polymeric luminescent compositions based on the mixture of dyes allow expanding the absorption region and increase the radiation shift. A luminescent solar concentrator consisting of a glass plate coated with such film can be used for photovoltaic window application.

  17. Intra-individual variability in the urine concentrations of inhaled salmeterol in male subjects with reference to doping analysis – impact of urine specific gravity correction

    DEFF Research Database (Denmark)

    Hostrup, Morten; Kalsen, Anders; Hemmersbach, Peter

    2012-01-01

    and a-hydroxysalmeterol during visits one and two were 12.6 and 21.8%, respectively. The intra-individual variability of salmeterol and a-hydroxysalmeterol in the urine concentrations were significantly higher when uncorrected for USG with 43.0 and 43.7% versus 20.4% (p...Since 2010, the World Anti-Doping Agency (WADA) has introduced urinary thresholds for some beta2-agonists. In doping analysis urine samples of beta2-agonists are not corrected for the Urine Specific Gravity (USG) by the WADA laboratories. Several studies have observed high differences in the urine...

  18. Higher Fe{sup 2+}/total Fe ratio in iron doped phosphate glass melted by microwave heating

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Ashis K., E-mail: ashis@cgcri.res.in [CSIR-Central Glass and Ceramic Research Institute, 196 Raja S.C. Mullick Road, Kolkata 700032 (India); Sinha, Prasanta K. [CSIR-Central Glass and Ceramic Research Institute, 196 Raja S.C. Mullick Road, Kolkata 700032 (India); Das, Dipankar [UGC-DAE Consortium for Scientific Research, Kolkata 700098 (India); Guha, Chandan [Department of Chemical Engineering, Jadavpur University, Kolkata 700032 (India); Sen, Ranjan [CSIR-Central Glass and Ceramic Research Institute, 196 Raja S.C. Mullick Road, Kolkata 700032 (India)

    2015-03-15

    Highlights: • Iron doped phosphate glasses prepared using microwave heating and conventional heating under air and reducing atmosphere. • Presence of iron predominantly in the ferrous oxidation state in all the glasses. • Significant concentrations of iron in the ferrous oxidation state on both octahedral and tetrahedral sites in all the glasses. • Ratio of Fe{sup 2+} with total iron is found higher in microwave prepared glasses in comparison to conventional prepared glasses. - Abstract: Iron doped phosphate glasses containing P{sub 2}O{sub 5}–MgO–ZnO–B{sub 2}O{sub 3}–Al{sub 2}O{sub 3} were melted using conventional resistance heating and microwave heating in air and under reducing atmosphere. All the glasses were characterised by UV–Vis–NIR spectroscopy, Mössbauer spectroscopy, thermogravimetric analysis and wet colorimetry analysis. Mössbauer spectroscopy revealed presence of iron predominantly in the ferrous oxidation state on two different sites in all the glasses. The intensity of the ferrous absorption peaks in UV–Vis–NIR spectrum was found to be more in glasses prepared using microwave radiation compared to the glasses prepared in a resistance heating furnace. Thermogravimetric analysis showed increasing weight gain on heating under oxygen atmosphere for glass corroborating higher ratio of FeO/(FeO + Fe{sub 2}O{sub 3}) in glass melted by direct microwave heating. Wet chemical analysis also substantiated the finding of higher ratio Fe{sup +2}/ΣFe in microwave melted glasses. It was found that iron redox ratio was highest in the glasses prepared in a microwave furnace under reducing atmosphere.

  19. Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

    Science.gov (United States)

    Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

    2018-01-01

    Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

  20. Influence of Sc doping concentration on electronic structure and optical properties of ZnO

    International Nuclear Information System (INIS)

    Wu Yuxi; Zhang Hao; Han Long; Qu Licheng; Gu Shulin; Li Teng

    2011-01-01

    In this paper, we adopt the density functional theory (DFT) plane wave pseudopotential method to study the crystal structure, electronic structure and optical property for the different concentrations of Sc doped ZnO system. We optimize the structure of Sc and get the basis of numerical simulation. The results show that with the adoption of Sc, the lattice constants of the system increase gradually, the energy of the system becomes larger, the Fermi level enters into the conduction band, the system shows Metallic gradually and the band gap becomes wider. On the other hand, certain changes of the optical properties of doped ZnO have taken place, i. e., a new absorption peak happens in ZnO absorption spectrum and the blue shift of absorption edge with the new peak occurs in the imagery part of dielectric function. (authors)

  1. Electrochemical oxidation of biological pretreated and membrane separated landfill leachate concentrates on boron doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Bo, E-mail: 357436235@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Long, HangYu, E-mail: 55686385@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Xie, Youneng, E-mail: 1187272844@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Wang, Yijia, E-mail: 503630433@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China)

    2016-07-30

    Highlights: • High quality boron-doped diamond film electrodes were synthesized on Nb substrates. • Electrochemical oxidation on boron-doped diamond anode is an effective method for treating landfill leachate concentrates. • Optimal operating conditions for electrochemical oxidation of landfill leachate concentrates is determined. • 87.5% COD removal and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment. - Abstract: In the present study, the high quality boron-doped diamond (BDD) electrodes with excellent electrochemical properties were deposited on niobium (Nb) substrates by hot filament chemical vapor deposition (HFCVD) method. The electrochemical oxidation of landfill leachate concentrates from disc tube reverse osmosis (DTRO) process over a BDD anode was investigated. The effects of varying operating parameters, such as current density, initial pH, flow velocity and cathode material on degradation efficiency were also evaluated following changes in chemical oxygen demand (COD) and ammonium nitrogen (NH{sub 3}−N). The instantaneous current efficiency (ICE) was used to appraise different operating conditions. As a result, the best conditions obtained were as follows, current density 50 mA cm{sup −2}, pH 5.16, flow velocity 6 L h{sup −1}. Under these conditions, 87.5% COD and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment, with specific energy consumption of 223.2 kWh m{sup −3}. In short, these results indicated that the electrochemical oxidation with BDD/Nb anode is an effective method for the treatment of landfill leachate concentrates.

  2. Influence of Y doping concentration on the properties of nanostructured MxZn1-xO (M=Y) thin film deposited by nebulizer spray pyrolysis technique

    Science.gov (United States)

    Mariappan, R.; Ponnuswamy, V.; Chandra Bose, A.; Suresh, R.; Ragavendar, M.

    2014-09-01

    Yttrium doped Zinc Oxide (YxZn1-xO) thin films deposited at a substrate temperature 400 °C. The effect of substrate temperature on the structural, surface morphology, compositional, optical and electrical properties of YxZn1-xO thin films was studied. X-ray diffraction studies show that all films are polycrystalline in nature with hexagonal crystal structure having highly textured (002) plane parallel to the surface of the substrate. The structural parameters, such as lattice constants (a and c), crystallite size (D), dislocation density (δ), microstrain (σ) and texture coefficient were calculated for different yttrium doping concentrations (x). High resolution scanning electron microscopy measurements reveal that the surface morphology of the films change from platelet like grains to hexagonal structure with grain size increase due to the yttrium doping. Energy dispersive spectroscopy confirms the presence of Y, Zn and O elements in the films prepared. Optical studies showed that all samples have a strong optical transmittance higher than 70% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the Y doping concentration increased. This result shows that the band gap is slightly decreased from 3.10 to 2.05 eV with increase of the yttrium doping concentrations (up to 7.5%) and then slightly increased. Room temperature PL measurements were done and the band-to-band emission energies of films were determined and reported. The complex impedance of the 10%Y doped ZnO film shows two distinguished semicircles and the diameter of the arcs got decreased in diameter as the temperature increases from 70 to 175 °C.

  3. Effect of Mo and Ti doping concentration on the structural and optical properties of ZnS nanoparticles

    Science.gov (United States)

    Naz, Hina; Ali, Rai Nauman; Zhu, Xingqun; Xiang, Bin

    2018-06-01

    In this paper, we report the effect of single phase Mo and Ti doping concentration on the structural and optical properties of the ZnS nanoparticles. The structural and optical properties of the as-synthesized samples have been examined by x-ray diffraction, transmission electron microscopy (TEM), UV-visible near infrared absorption spectroscopy and x-ray photoelectron spectroscopy. TEM characterizations reveal a variation in the doped ZnS nanoparticle size distribution by utilizing different dopants of Mo and Ti. In absorption spectra, a clear red shift of 14 nm is observed with increasing Mo concentration as compared to pure ZnS nanoparticles, while by increasing Ti doping concentration, blue shift of 14 nm is obtained. Moreover, it demonstrates that the value of energy band gap decreases from 4.03 eV to 3.89 eV in case of Mo doping. However, the value of energy band gap have shown a remarkable increase from 4.11 eV to 4.27 eV with increasing Ti doping concentration. Our results provide a new pathway to understand the effect of Mo and Ti doping concentrations on the structural and optical properties of ZnS nanoparticles as it could be the key to tune the properties for future optoelectronic devices.

  4. Quantification of urinary AICAR concentrations as a matter of doping controls.

    Science.gov (United States)

    Thomas, Andreas; Beuck, Simon; Eickhoff, Jens Christian; Guddat, Sven; Krug, Oliver; Kamber, Matthias; Schänzer, Wilhelm; Thevis, Mario

    2010-04-01

    Influencing the endurance in elite sports is one of the key points in modern sports science. Recently, a new class of prohibited substances reached in the focus of doping control laboratories and their misuse was classified as gene doping. The adenosine monophosphate activated protein kinase activator 5-amino-4-imidazolecarboxyamide ribonucleoside (AICAR) was found to significantly enhance the endurance even in sedentary mice after treatment. Due to endogenous production of AICAR in healthy humans, considerable amounts were present in the circulation and, thus, were excreted into urine. Considering these facts, the present study was initiated to fix reference values of renally cleared AICAR in elite athletes. Therefore a quantitative analytical method by means of isotope-dilution liquid chromatography (analytical column: C6-phenyl) coupled to tandem mass spectrometry, after a sample preparation consisting of a gentle dilution of native urine, was developed. Doping control samples of 499 athletes were analysed, and AICAR concentrations in urine were determined. The mean AICAR value for all samples was 2,186 ng/mL with a standard deviation of 1,655 ng/mL. Concentrations were found to differ depending on gender, type of sport and type of sample collection (in competition/out of competition). The method was fully validated for quantitative purposes considering the parameters linearity, inter- (12%, 7% and 10%) and intraday precision (14%, 9% and 12%) at low, mid and high concentration, robustness, accuracy (approx. 100%), limit of quantification (100 ng/mL), stability and ion suppression effects, employing an in-house synthesised (13)C(5)-labelled AICAR as internal standard.

  5. Growth and laser action of Yb: YVO4 crystals with low Yb doping concentration

    Science.gov (United States)

    Zhong, Degao; Teng, Bing; Li, Jianhong; Zhang, Shiming; Zhang, Bingtao; Wang, Chao; Tian, Xueping; Liu, Junhai

    2012-11-01

    Yb: YVO4 single crystals with low doping concentrations of Yb3+ less than 0.3 at% were grown using the Czochralski method. The polarized absorption spectra were measured at room temperature. Strong anisotropy exists in the absorption spectra, resulting in almost entirely different features for π-polarization and σ-polarization. The laser emission spectrum and relationship curve between the output power and absorbed pump power (Pabs) were measured. The continuous-wave laser action of Yb: YVO4 single crystal in a range of 1020.4-1026.3 nm was realized by using a high-power diode laser as the pump source.

  6. Dopant concentration and thermoluminescence (TL) properties of tailor-made Ge-doped SiO2 fibres

    International Nuclear Information System (INIS)

    Zahaimi, Nurul Arina; Ooi Abdullah, Mohd Haris Ridzuan; Zin, Hafiz; Abdul Rahman, Ahmad Lutfi; Hashim, Suhairul; Saripan, Mohd Iqbal; Paul, Mukul Chandra; Bradley, D.A.; Abdul Rahman, Ahmad Taufek

    2014-01-01

    Study focuses on characterisation of diverse concentrations of Ge-doped SiO 2 fibre as a potential thermoluminescence (TL) system for radiotherapy dosimetry. Irradiations were made using a linear accelerator providing 6 MV and 10 MV photon beams. Investigation has been done on various doped core diameter Ge-doped SiO 2 glass fibres such as commercial telecommunication fibres of 8 µm and 9 µm (CorActive High Tech, Canada), tailor-made fibres of 23 and 50 µm produced by the Central Glass and Ceramic Research Institute Kolkata, and tailor-made fibres of 11 µm produced by the University of Malaya Photonics Research Centre. The fibres have been characterised for TL sensitivity, reproducibility, dose- and energy-dependence. The area under the TL glow curve increases with increasing core diameter. For repeat irradiations at a fixed dose the dosimeter produces a flat response better than 4% (1SD) of the mean of the TL distribution. Minimal TL signal fading was found, less than 0.5% per day post irradiation. Linearity of TL has been observed with a correlation coefficient (r 2 ) of better than 0.980 (at 95% confidence level). For particular dopant concentrations, the least square fits show the change in TL yield, in counts per second per unit mass, obtained from 50 µm core diameter fibres irradiated at 6 MV of photon to be 8 times greater than that of 8 µm core diameter fibre. With respect to energy response, the TL yield at 10 MV decreases by∼5% compared to that at 6 MV, primarily due to the lower mass energy absorption coefficient at higher photon energy. These early results indicate that selectively screened fibres can be developed into a promising TL system, offering high spatial resolution capability and, with this, verification of complex radiotherapy dose distributions. - Highlights: • We examined the TL glow curve intensity for various diameter sizes of germanium doped silica glass fibre. • TL sensitivity increased with the increase of fibre core

  7. Comparative study of thermal lensing in low-doped Nd:YVO4 and Nd:GdVO4 of equal doping concentration

    CSIR Research Space (South Africa)

    Strauss

    2009-06-01

    Full Text Available stream_source_info Strauss_2009.pdf.txt stream_content_type text/plain stream_size 4705 Content-Encoding UTF-8 stream_name Strauss_2009.pdf.txt Content-Type text/plain; charset=UTF-8 Comparative Study of Thermal Lensing... in Low-doped Nd:YVO4 and Nd:GdVO4 of Equal Doping Concentration H. J. Strauss1,2, C. Bollig1, H. M. von Bergmann2 and M. J. D. Esser1 1. National Laser Centre, Council for Scientific and Industrial Research, PO Box 395, Pretoria 0001, South Africa 2...

  8. Photoluminescence of highly compensated GaAs doped with high concentration of Ge

    Science.gov (United States)

    Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

    1999-12-01

    We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

  9. Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

    Directory of Open Access Journals (Sweden)

    K. Usharani

    2015-06-01

    Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

  10. Influence of the dopant concentration on structural, optical and photovoltaic properties of Cu-doped ZnS nanocrystals based bulk heterojunction hybrid solar cells

    Science.gov (United States)

    Jabeen, Uzma; Adhikari, Tham; Shah, Syed Mujtaba; Pathak, Dinesh; Wagner, Tomas; Nunzi, Jean-Michel

    2017-06-01

    Zinc sulphide (ZnS) and Cu-doped ZnS nanoparticles were synthesized by the wet chemical method. The nanoparticles were characterized by UV-visible, fluorescence, fourier transform infra-red (FTIR) spectrometry, X-ray diffraction (XRD), X-ray photoelectron spectrometry (XPS), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM). Scanning electron microscopy supplemented with EDAX was employed to observe the morphology and chemical composition of the un-doped and doped samples. A significant blue shift of the absorption band with respect to the un-doped zinc sulphide was sighted by increasing the Cu concentration in the doped sample with decreasing the size of nanoparticles. Consequently, the band gap was tuned from 3.13 to 3.49 eV due to quantum confinement. The green emission arises from the recombination between the shallow donor level (sulfur vacancy) and the t2 level of Cu2+. However, the fluorescence emission spectrum of the undoped ZnS nanoparticles was deconvoluted into two bands, which are centered at 419 and 468 nm. XRD analysis showed that the nanomaterials were in cubic crystalline state. XRD peaks show that there were no massive crystalline distortions in the crystal lattice when the Cu concentration (0.05-0.1 M) was increased in the ZnS lattice. However, in the case of Cu-doped samples (0.15-0.2 M), the XRD pattern showed an additional peak at 37° due to incomplete substitution occurring during the experimental reaction step. A comparative study of surfaces of undoped and Cu-doped ZnS nanoparticles were investigated using X-ray photoelectron spectroscopy (XPS). The synthesized nanomaterial in combination with poly(3-hexylthiophene) (P3HT) was used in the fabrication of solar cells. The devices with ZnS nanoparticles showed an efficiency of 0.31%. The overall power conversion efficiency of the solar cells at 0.1 M Cu content in doped ZnS nanoparticles was found to be 1.6 times higher than the

  11. Fabrication, Characterization, and Antimicrobial Activity, Evaluation of Low Silver Concentrations in Silver-Doped Hydroxyapatite Nanoparticles

    Directory of Open Access Journals (Sweden)

    A. Costescu

    2013-01-01

    Full Text Available The aim of this study was the evaluation of (Ca10-xAgx(PO46(OH2 nanoparticles (Ag:HAp-NPs for their antibacterial and antifungal activity. Resistance to antimicrobial agents by pathogenic bacteria has emerged in the recent years as a major public health problem worldwide. In this paper, we report a comparison of the antimicrobial activity of low concentrations silver-doped hydroxyapatite nanoparticles. The silver-doped nanocrystalline hydroxyapatite powder was synthesized at 100°C in deionised water. The as-prepared Ag:Hap nanoparticles were characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, FT-IR, and FT-Raman spectroscopy. X-ray diffraction (XRD studies demonstrate that powders obtained by coprecipitation at 100°C exhibit the apatite characteristics with good crystal structure, without any new phase or impurities found. FT-IR and FT-Raman spectroscopy revealed the presence of the various vibrational modes corresponding to phosphates and hydroxyl groups and the absence of any band characteristic to silver. The specific microbiological assays demonstrated that Ag:HAp-NPs exhibited antimicrobial features, but interacted differently with the Gram-positive, Gram-negative bacterial and fungal tested strains.

  12. Determination of Al concentration in Al doped ZnO using Auger spectra excited by Mo X-rays

    International Nuclear Information System (INIS)

    Toth, J.; Koever, L.; Cserny, I.; Varga, D.

    2006-01-01

    Complete text of publication follows. A good conductor with excellent transparency is of crucial importance for the window layer of CIGS solar cells. Al doped ZnO is a good candidate for this purpose, its conductivity depends on the concentration and chemical state of the Al dopant atoms. It was demonstrated that the non-conventional XPS using Mo X-rays for excitation is a very sensitive tool for the detection of Al, P, Si [1, 2, 3]. The present paper compares the experimental ratios for Zn/Al photoinduced peak intensity ratios obtained using both Al and Mo X-ray excitations. The Mo excited Zn/Al intensity ratios can be determined with higher selectivity and sensitivity than the Zn/Al intensity ratios excited by Al X-rays. The experiments were performed with a hemispherical deflector electron spectrometer [4]. The chemical state of the Al was identified to be close to that in Al 2 O 3 . The atomic concentrations were determined using a calibration curve based on ZnO/Al samples with known composition of Al. The energy dependent efficiency of the electron spectrometer was determined comparing REELS spectra of Cu specimen to standard spectra measured by K. Goto (Nagoya Institute of Technology, Japan). For evaluation of the Al atomic concentrations from the measured photoelectron intensities the photoionisation cross-sections of Band et al [5] and the IMFP data of S. Tanuma et al [6] and C.J. Powell and A. Jablonski [7] were used. (author)

  13. Effect of Co doping concentration on structural properties and optical parameters of Co-doped ZnO thin films by sol-gel dip-coating method.

    Science.gov (United States)

    Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young

    2014-11-01

    The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.

  14. type doping in the channel of graphene nanoribbon

    Indian Academy of Sciences (India)

    type doping in the channel is better with smaller supply voltage compared to higher supply voltage. On increasing the n -type doping concentration, we obtained better on-current and output characteristics in comparison with undoped and p ...

  15. Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Xue Zhang

    2017-07-01

    Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

  16. Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique

    Directory of Open Access Journals (Sweden)

    Mohd Sabri Mohd Ghazali

    2011-09-01

    Full Text Available Thin and transparent films of doped cadmium sulfide (CdS were obtained on commercial glass substrates by Chemical Bath Deposition (CBD technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.

  17. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    International Nuclear Information System (INIS)

    Kim, Byunggu; Leem, Jae-Young

    2017-01-01

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  18. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Byunggu; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

    2017-01-15

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  19. Effect of annealing and impurity concentration on the TL characteristics of nanocrystalline Mn-doped CaF2

    International Nuclear Information System (INIS)

    Sahare, P.D.; Singh, Manveer; Kumar, Pratik

    2015-01-01

    Nanocrystalline samples of Mn-doped CaF 2 were synthesized by chemical coprecipitation method. The impurity concentration was varied in the range of 0.5–4.0 mol%. The structure of the synthesized material was confirmed using powder XRD analysis. TEM images of the nanoparticles show their size occurring mostly in the range of 35–40 nm, with clusters of some impurity phases formed on annealing of the material at higher temperatures. Detailed studies on TL showed that the structures of glow curves depend on Mn concentrations and annealing temperatures. Optimization of the concentration and annealing temperature showed that the sample (doped with 3.0 mol% and annealed at 673 K) has almost a single dosimetric glow peak appearing at around 492 K. EPR and PL spectra were further studied to understand the reasons for changes in the glow curve structures. All detailed studies on TL, PL and EPR showed that the changes in glow curve structures are caused not only by the stress connected with the difference in ionic radii of host Ca 2+ and the guest impurity Mn 3+ /Mn 2+ , but are also governed by other reasons, like diffusion of atmospheric oxygen and formation of impurity aggregates, such as, MnO 2 , Mn 3 O 4 , etc. This is true not only for nanocrystalline CaF 2 :Mn but could also be so for the bulk CaF 2 :Mn (TLD-400) and would thus help in understanding complex glow curve structure, high fading and the loss of reusability on annealing beyond 673 K. - Highlights: • Nanocrystalline material CaF 2 :Mn is prepared by simple coprecipitation method. • The material is studied by XRD, TEM, ESR, TL and PL techniques. • High impurity concentrations give rise to clusters causing material instability. • Changes in ESR and PL and glow curve structures are studied and explained. • Better characteristics than the bulk make the nanophosphor useful for dosimetry

  20. N-doped Sb2Te phase change materials for higher data retention

    International Nuclear Information System (INIS)

    Zhu Min; Wu Liangcai; Rao Feng; Song Zhitang; Li Xuelai; Peng Cheng; Zhou Xilin; Ren Kun; Yao Dongning; Feng Songlin

    2011-01-01

    Highlights: → Crystallization temperatures of the N-doped Sb 2 Te films increase remarkably. → The E a of N-doped Sb 2 Te films increase first, and then decrease. → The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN1 films. → The power consumption of PCRAM test cell based on Sb 2 TeN1 film is low. - Abstract: Crystallization temperatures of the Sb 2 Te films increase remarkably from 139.4 deg. C to 223.0 deg. C as the N 2 flow rates increasing from 0 sccm to 1.5 sccm. Electrical conduction activation energies for amorphous and crystalline states increase by doping nitrogen. A small amount of nitrogen atoms can locate at interstitial sites in the hexagonal structure, generating a strain field, and improving the thermal stability of amorphous state. The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN 1 films. Doping excessively high nitrogen in Sb 2 Te film will form nitride and make Te separate out. As a result, the activation energy for crystallization decreases instead, accompanying with the deterioration of thermal stability. The power consumption of PCRAM test cell based on Sb 2 TeN 1 film is ten times lower than that of PCRAM device using Ge 2 Sb 2 Te 5 films.

  1. Effect of oxygen vacancy and dopant concentration on the magnetic properties of high spin Co2+ doped TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Choudhury, B.; Choudhury, A.; Maidul Islam, A.K.M.; Alagarsamy, P.; Mukherjee, M.

    2011-01-01

    Co doped TiO 2 nanoparticles have been synthesized by a simple sol-gel route taking 7.5, 9.5 and 10.5 mol% of cobalt concentration. Formation of nanoparticles is confirmed by XRD and TEM. Increase in d-spacing occurs for (0 0 4) and (2 0 0) peak with increase in impurity content. Valence states of Co and its presence in the doped material is confirmed by XPS and EDX. The entire vacuum annealed samples show weak ferromagnetism. Increased magnetization is found for 9.5 mol% but this value again decreases for 10.5 mol% due to antiferromagnetic interactions. A blocking temperature of 37.9 K is obtained, which shows shifting to high temperature as the dopant concentration is increased. The air annealed sample shows only paramagnetic behavior. Temperature dependent magnetic measurements for the air annealed sample shows antiferromagnetic behavior with a Curie-Weiss temperature of -16 K. Here we report that oxygen vacancy and cobalt aggregates are a key factor for inducing ferromagnetism-superparamagnetism in the vacuum annealed sample. Appearance of negative Curie-Weiss temperature reveals the presence of antiferromagnetic Co 3 O 4 , which is the oxidation result of metallic Co or cobalt clusters present on the host TiO 2 . - Research highlights: → Oxygen vacancy induces ferromagnetism in cobalt doped anatase TiO2 nanoparticles. → On air annealing the sample loses ferromagnetism giving rise to paramagnetism. → Saturation magnetization decreases at higher doping concentration. → Blocking of magnetic moment occurs due to the presence of cobalt clusters.

  2. Effect of CTAB concentration on synthesis of nickel doped manganese oxide nanoparticles

    Science.gov (United States)

    Shobana, R.; Saravanakumar, B.; Ravi, G.; Yuvakkumar, R.

    2018-05-01

    In this work the effect of concentration of cetyltrimethylammonium bromide (CTAB) in the synthesis of Nickel doped Manganese oxide (Ni-MnO2) nanoparticles have been carried out by adopting the sol-gel process. The synthesized products were characterized by XRD, Infra- Red (FTIR) and SEM analysis. The XRD confirms the formation of Ni-MnO2 nanoparticles illustrate peak at 31.4° with lattice plane (-231). The IR spectra correspond to the peak at 592 and 846 cm-1 attributed to the characteristics peak for Ni-MnO2 nanoparticles. The SEM images for all three Ni-MnO2 nanoparticles for different concentration of CTAB allows us to assess the formation route of nano tentacles from 10 mM, 30 mM and 50 mM. The configured nano tentacles of Ni-MnO2 nanoparticles presumably leads to more significantly change its properties, particularly in its electrochemical properties show the ways to be suitable candidates for supercapacitor, battery, photo catalytic and fuel cell applications.

  3. Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

    International Nuclear Information System (INIS)

    Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

    2006-01-01

    The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

  4. Concentration dependent luminescence quenching of Er{sup 3+}-doped zinc boro-tellurite glass

    Energy Technology Data Exchange (ETDEWEB)

    Said Mahraz, Zahra Ashur; Sahar, M.R., E-mail: mrahim057@gmail.com; Ghoshal, S.K.; Reza Dousti, M.

    2013-12-15

    Understanding the mechanism of luminescence quenching in rare earth doped tellurite glass is an important issue. The Er{sup 3+}-doped boro-tellurite glasses with compositions 30B{sub 2}O{sub 3}+10ZnO+(60−x)TeO{sub 2}+xEr{sub 2}O{sub 3} (where x=0, 0.5, 1, 1.5 and 2 mol%) were prepared by melt quenching method. Structural and optical properties of the proposed glasses were characterized using XRD, FTIR, density, UV–vis-IR absorption and PL spectroscopy. The amorphous nature of these glasses was confirmed by XRD technique. The IR-spectrum reveals five absorption bands assigned to different B–O and Te–O vibrational groups. UV–vis-IR absorption spectrum exhibits seven absorption bands at 6553, 10,244, 12,547, 15,360, 19,230, 20,661 and 22,522 cm{sup −1} corresponding to {sup 4}I{sub 13/2}, {sup 4}I{sub 11/2}, {sup 4}I{sub 9/2}, {sup 4}F{sub 9/2}, {sup 2}H{sub 11/2}, {sup 4}F{sub 7/2} and {sup 4}F{sub 3/2} excited states of Er{sup 3+} ion respectively. The optical band gap energy (E{sub opt}) corresponding to the direct and indirect allowed transitions decreased, while the Urbach energy and cut-off wavelengths are increased by the introduction of Er{sup 3+} ions. The refractive index, density and phonon cut-off edge of the samples are increased and the molar volume decreased with the further addition of dopants. The Judd–Ofelt parameter (Ω{sub 2}) decreased from 5.73 to 3.13×10{sup −20} cm{sup 2} with the increase of erbium ions concentration from 0.5 to 2 mol%. The PL spectra show green emissions for the transition from {sup 2}H{sub 11/2} and {sup 4}S{sub 3/2} excited states to {sup 4}I{sub 15/2} ground state, which show strong quenching due to the addition of Er{sup 3+} ions. -- Highlights: • Er{sup 3+}-doped zinc boro-tellurite glass has been synthesized by melt quench method. • Spectroscopic properties dependent concentration is analyzed by different techniques. • Judd–Ofelt intensity parameter (Ω{sub 2}) decreased by increase in erbium

  5. Synthesis of nano-TiO2 photocatalysts with tunable Fe doping concentration from Ti-bearing tailings

    Science.gov (United States)

    Sui, Yulei; Liu, Qingxia; Jiang, Tao; Guo, Yufeng

    2018-01-01

    In this work, highly pure nano-TiO2 photocatalysts with varying Fe doping concentration were successfully synthesized from low-cost Ti-bearing tailings by an acidolysis-hydrothermal route. The effects of H2SO4 concentration, leaching temperature, acid/tailings ratio and leaching time on the recovery of TiO2 from the tailings were investigated. Synthesized samples were characterized by XRD, TEM, EDS, XPS, and UV-vis spectroscopy. The results showed that the material prepared is characteristic anatase with the average size of 20 nm and the Fe doping concentration in the synthesized nano-TiO2 is tunable. The photocatalytic activity of synthesized nano-TiO2 photocatalyst was also evaluated by the photodegradation of Rhodamine B under visible light and UV light irradiation. Our study demonstrates a low-cost approach to synthesize highly efficient and visible light responsive catalysts.

  6. Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-03-01

    The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

  7. Gain investigation of Perylene-Red-doped PMMA for stimulated luminescent solar concentrators.

    Science.gov (United States)

    Kaysir, Md Rejvi; Fleming, Simon; Argyros, Alexander

    2018-04-01

    Luminescent solar concentrators (LSCs) utilizing stimulated emission by a seed laser are a promising approach to overcome the limitations of conventional LSCs, with a significant reduction of the photovoltaic material. In our previous work, we demonstrated the principle of a stimulated LSC (s-LSC) and correspondingly developed a model for quantifying the output power of such a system, taking into account different important physical parameters. The model suggested Perylene Red (PR) dye as a potential candidate for s-LSCs. Here, we experimentally investigate the gain of PR-doped polymethyl methacrylate (PMMA) required for s-LSCs using a single pump wavelength (instead of the solar spectrum) as a proof of principle. The results found from the experiment are well matched with the previously developed numerical model except for gain saturation, which occurs at a comparatively small seed laser signal power. To investigate the gain saturation, two approaches were taken: investigating (i) spectral hole burning and (ii) triplet state absorption. Experimental investigation of spectral hole burning with PR dyes showed a small effect on the gain saturation. We developed a general state model considering triplet state absorption of the PR dyes for the second approach. The state model suggests that the PR dyes suffer from significant triplet state absorption loss, which obstructs the normal operation of the PR-based s-LSC system.

  8. Improvement in mechanical properties of high concentration particle doped thermoset composites

    International Nuclear Information System (INIS)

    Ahmed, N.

    2009-01-01

    The paper relates to high concentration particle doped composites based on thermosetting polymer systems in which the sequential addition of particles of certain size distribution is followed by curing and casting of the slurry to form a thermoset composite. Conventionally, at a threshold of beyond 90% of particles by weight of the polymer using triglyceride, the mechanical properties of the composite exhibit a sharp decline. The present research mitigates this behavior by incorporating a unique combination of cross-linking agents in the base polymer to impart exceptional mechanical properties to the composite. More specifically, the base polymer consists of butadiene, with triglyceride as cross-linking agent together with hydroxy-alkane as the chain extension precursors, when tune to the appropriate level of hard segment ratio in the polymer. An added advantage according to the present work resides in the analytical nature of butadiene pre-polymer as opposed to natural product; traditional composites based on natural sources are hampered by their inconsistent chemical composition and poor shelf life in the fabricated composite. The thermoset composite according the present research exhibits superior tensile strength (200-300 psi) properties using particle loading as high as 92% by weight of the fabricated composite as measured on a Tinius Olsen machine. Dynamic Mechanical Testing reveals interesting combination of storage and loss moduli in the fabricated specimens as a function of optimizing the thermal response of the viscoelastic composite to imposed vibration loading. (author)

  9. Investigation of microstructure, electrical and photoluminescence behaviour of Ni-doped Zn0.96Mn0.04O nanoparticles: Effect of Ni concentration

    Science.gov (United States)

    Rajakarthikeyan, R. K.; Muthukumaran, S.

    2017-07-01

    ZnO, Zn0.96Mn0.04O and Ni-doped Zn0.96Mn0.04O nanoparticles with different Ni concentrations (0%, 2% and 4%) have been synthesized successfully by sol-gel method. The effects of Ni doping on the structural and optical properties were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectroscopy. The XRD pattern confirmed the existence of single phase wurtzite-like hexagonal structure throughout the Ni concentrations without any additional phases. The substitution of Ni created the lattice distortion due to the disparity of ionic radius between Zn and Ni which reduced the crystallite size. The microscopic images showed that the size of ZnO nanoparticles reduced by Ni-doping while the shape remains almost spherical/hexagonal type. The electrical conductivity found to be maximum at Ni = 2% due to the availability of more charge carriers generated by Ni. The decrease of electrical conductivity at higher doping (Ni = 4%) is due to the fact that the generation of more defects. The enhanced band gap from 3.73 eV (Ni = 0%) to 3.79 eV (Ni = 4%) by the addition of Ni explained by Burstein-Moss effect. The change in infra-red (IR) intensity and full width at half maximum (FWHM) corresponding to the frequency around defect states were caused by the difference in the bond lengths that occurs when Ni ion replaces Zn ion. The observed blue band emission from 474 nm to 481 nm is due to a radiative transition of an electron from the deep donar level of Zni to an acceptor level of neutral VZn and the origin of green band may be due to oxygen vacancies and intrinsic defects. The tuning of the band gap and the visible emission bands by Ni doping concluded that Ni-doped Zn0.96Mn0.04O is suitable for various nano-photo-electronics applications.

  10. Nutrient concentrations in a Littorella uniflora community at higher CO2 concentrations and reduced light intensities

    DEFF Research Database (Denmark)

    Andersen, T.; Pedersen, O.; Andersen, F. Ø.

    2005-01-01

    laboratory experiments with isoetid vegetation (Littorella uniflora) where water column CO2 and light could be manipulated in order to test whether (i) light and CO2 availability affect nutrient concentrations in isoetid vegetation, and (ii) if changes in light and CO2 climate affect fluxes of inorganic...... nitrogen (N) and phosphorus (P) from sediment to water column, which potentially could result in increased growth of epiphytic algae. 3. The results showed that the standing stocks of phosphorus and nitrogen in the L. uniflora vegetation were significantly influenced by CO2 concentration and light...... intensity. Both standing stocks of P and N were significantly higher in the mesocosm treatments with high CO2 concentration than in those at low CO2 concentration. Similarly, standing stocks of P and N enhanced with increasing light intensity. 4. Measurements of nutrient fluxes both in the field...

  11. Effect of the concentration of magnetic grains on the linear-optical-absorption coefficient of ferrofluid-doped lyotropic mesophases: deviation from the Beer-Lambert law.

    Science.gov (United States)

    Cuppo, F L S; Gómez, S L; Figueiredo Neto, A M

    2004-04-01

    In this paper is reported a systematic experimental study of the linear-optical-absorption coefficient of ferrofluid-doped isotropic lyotropic mixtures as a function of the magnetic-grains concentration. The linear optical absorption of ferrolyomesophases increases in a nonlinear manner with the concentration of magnetic grains, deviating from the usual Beer-Lambert law. This behavior is associated to the presence of correlated micelles in the mixture which favors the formation of small-scale aggregates of magnetic grains (dimers), which have a higher absorption coefficient with respect to that of isolated grains. We propose that the indirect heating of the micelles via the ferrofluid grains (hyperthermia) could account for this nonlinear increase of the linear-optical-absorption coefficient as a function of the grains concentration.

  12. Differences in energy expenditures and growth dilution explain higher PCB concentrations in male summer flounder

    Science.gov (United States)

    Madenjian, Charles P.; Jensen, Olaf P.; Rediske, Richard R.; O'Keefe, James P.; Vastano, Anthony R.; Pothoven, Steven A.

    2016-01-01

    Comparison of polychlorinated biphenyl (PCB) concentrations between the sexes of mature fish may reveal important behavioral and physiological differences between the sexes. We determined whole-fish PCB concentrations in 23 female summer flounder Paralichthys dentatus and 27 male summer flounder from New Jersey coastal waters. To investigate the potential for differences in diet or habitat utilization between the sexes, carbon and nitrogen stable isotope ratios were also determined. In 5 of the 23 female summer flounder, PCB concentrations in the somatic tissue and ovaries were determined. In addition, we used bioenergetics modeling to assess the contribution of the growth dilution effect to the observed difference in PCB concentrations between the sexes. Whole-fish PCB concentrations for females and males averaged 87 and 124 ng/g, respectively; thus males were 43% higher in PCB concentration compared with females. Carbon and nitrogen stable isotope ratios did not significantly differ between the sexes, suggesting that diet composition and habitat utilization did not vary between the sexes. Based on PCB determinations in the somatic tissue and ovaries, we predicted that PCB concentration of females would increase by 0.6%, on average, immediately after spawning due to release of eggs. Thus, the change in PCB concentration due to release of eggs did not explain the higher PCB concentrations observed in males. Bioenergetics modeling results indicated that the growth dilution effect could account for males being 19% higher in PCB concentration compared with females. Thus, the bulk of the observed difference in PCB concentrations between the sexes was not explained by growth dilution. We concluded that a higher rate of energy expenditure in males, stemming from greater activity and a greater resting metabolic rate, was most likely the primary driver for the observed difference in PCB concentrations between the sexes.

  13. Differences in Energy Expenditures and Growth Dilution Explain Higher PCB Concentrations in Male Summer Flounder.

    Directory of Open Access Journals (Sweden)

    Charles P Madenjian

    Full Text Available Comparison of polychlorinated biphenyl (PCB concentrations between the sexes of mature fish may reveal important behavioral and physiological differences between the sexes. We determined whole-fish PCB concentrations in 23 female summer flounder Paralichthys dentatus and 27 male summer flounder from New Jersey coastal waters. To investigate the potential for differences in diet or habitat utilization between the sexes, carbon and nitrogen stable isotope ratios were also determined. In 5 of the 23 female summer flounder, PCB concentrations in the somatic tissue and ovaries were determined. In addition, we used bioenergetics modeling to assess the contribution of the growth dilution effect to the observed difference in PCB concentrations between the sexes. Whole-fish PCB concentrations for females and males averaged 87 and 124 ng/g, respectively; thus males were 43% higher in PCB concentration compared with females. Carbon and nitrogen stable isotope ratios did not significantly differ between the sexes, suggesting that diet composition and habitat utilization did not vary between the sexes. Based on PCB determinations in the somatic tissue and ovaries, we predicted that PCB concentration of females would increase by 0.6%, on average, immediately after spawning due to release of eggs. Thus, the change in PCB concentration due to release of eggs did not explain the higher PCB concentrations observed in males. Bioenergetics modeling results indicated that the growth dilution effect could account for males being 19% higher in PCB concentration compared with females. Thus, the bulk of the observed difference in PCB concentrations between the sexes was not explained by growth dilution. We concluded that a higher rate of energy expenditure in males, stemming from greater activity and a greater resting metabolic rate, was most likely the primary driver for the observed difference in PCB concentrations between the sexes.

  14. Conventional electron paramagnetic resonance of Mn2+ in synthetic hydroxyapatite at different concentrations of the doped manganese

    Science.gov (United States)

    Murzakhanov, F.; Mamin, G.; Voloshin, A.; Klimashina, E.; Putlyaev, V.; Doronin, V.; Bakhteev, S.; Yusupov, R.; Gafurov, M.; Orlinskii, S.

    2018-05-01

    Powders of synthetic hydroxyapatite doped with Mn2+ ions in concentrations from 0.05 till 5 wt. % were investigated by conventional electron paramagnetic resonance (EPR). The parameters of the spin-Hamiltonian are derived. Partially resolved hyperfine structure in the magnetic fields corresponding to g ≈ 4.3 and g ≈ 9.4 is observed. The narrowing of the central peak with concentration is reported. A possibility to use the linewidth and intensity of the central peak for concentration measurements are discussed. The results could be used for the identification and qualification of Mn2+ in oil, mining and ore formations.

  15. Concentration quenching of Eu{sup 2+} doped Ca{sub 2}BO{sub 3}Cl

    Energy Technology Data Exchange (ETDEWEB)

    Seed Ahmed, H.A.A. [Department of Physics, University of the Free State, Bloemfontein, ZA 9300 (South Africa); Department of Physics, University of Khartoum, Khartoum (Sudan); Swart, H.C. [Department of Physics, University of the Free State, Bloemfontein, ZA 9300 (South Africa); Bergman, Peber [Department of Physics, Chemistry and Biology, Linköping University, Linköping (Sweden); Kroon, R.E., E-mail: KroonRE@Uufs.ac.za [Department of Physics, University of the Free State, Bloemfontein, ZA 9300 (South Africa)

    2016-03-15

    Highlights: • Ca{sub 2}BO{sub 3}Cl doped with Eu{sup 2+} prepared by solid state reaction. • Concentration quenching studied by intensity and lifetime measurements. • Accurate determination of the critical transfer distance. • Interaction mechanism verified to be dipole–dipole interactions. - Abstract: With the aim of determining the concentration quenching mechanism of Eu{sup 2+} doped Ca{sub 2}BO{sub 3}Cl, a series of phosphors with a varied Eu{sup 2+} concentration (Ca{sub 2−x}BO{sub 3}Cl:xEu{sup 2+}) was synthesized by the solid state reaction method. The phase structure was determined by X-ray diffraction. Photoluminescence (PL) measurements showed broad excitation and emission signatures of the allowed f–d transition of Eu{sup 2+} ions. The PL emission intensity was found to be increased by increasing the concentration of Eu{sup 2+} ions up to x = 0.03 and then decreased as a result of the concentration quenching effect. The lifetime of the emission from the Eu{sup 2+} ions was measured and the decrease in the lifetime with increasing Eu{sup 2+} concentration confirmed that non-radiative energy transfer occurred between Eu{sup 2+} ions. From the luminescence data, the value of the critical transfer distance was calculated as 1.5 nm and the corresponding concentration quenching mechanism was verified to be a dipole–dipole interaction.

  16. Luminescence study on Eu3+ doped Y2O3 nanoparticles: particle size, concentration and core-shell formation effects

    International Nuclear Information System (INIS)

    Singh, L Robindro; Ningthoujam, R S; Sudarsan, V; Srivastava, Iti; Singh, S Dorendrajit; Dey, G K; Kulshreshtha, S K

    2008-01-01

    Nanoparticles of Eu 3+ doped Y 2 O 3 (core) and Eu 3+ doped Y 2 O 3 covered with Y 2 O 3 shell (core-shell) are prepared by urea hydrolysis for 3 h in ethylene glycol medium at a relatively low temperature of 140 deg. C, followed by heating at 500 and 900 deg. C. Particle sizes determined from x-ray diffraction and transmission electron microscopic studies are 11 and 18 nm for 500 and 900 deg. C heated samples respectively. Based on the luminescence studies of 500 and 900 deg. C heated samples, it is confirmed that there is no particle size effect on the peak positions of Eu 3+ emission, and optimum luminescence intensity is observed from the nanoparticles with a Eu 3+ concentration of 4-5 at.%. A luminescence study establishes that the Eu 3+ environment in amorphous Y (OH) 3 is different from that in crystalline Y 2 O 3 . For a fixed concentration of Eu 3+ doping, there is a reduction in Eu 3+ emission intensity for core-shell nanoparticles compared to that of core nanoparticles, and this has been attributed to the concentration dilution effect. Energy transfer from the host to Eu 3+ increases with increase of crystallinity

  17. Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

    Science.gov (United States)

    Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

    2018-04-01

    The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

  18. Anatase phase stability and doping concentration dependent refractivity in codoped transparent conducting TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, T L [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Furubayashi, Y [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hirose, Y [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hitosugi, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Shimada, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hasegawa, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

    2007-10-07

    Nb{sub 0.06}Sn{sub x}Ti{sub 0.94-x}O{sub 2} (x {<=} 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of {lambda} = 500 nm is estimated to be 12.4% for Nb{sub 0.06}Sn{sub 0.3} Ti{sub 0.64}O{sub 2} thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO{sub 2}. Low resistivity on the order of 10{sup -4} {omega} cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb{sub 0.06}Sn{sub x} Ti{sub 0.94-x}O{sub 2} thin films (x {<=} 0.2). Optical and transport analyses demonstrate that doping Sn into Nb{sub 0.06} Ti{sub 0.94}O{sub 2} can reduce the refractivity while maintaining low resistivity and high transparency.

  19. Anatase phase stability and doping concentration dependent refractivity in codoped transparent conducting TiO2 films

    International Nuclear Information System (INIS)

    Chen, T L; Furubayashi, Y; Hirose, Y; Hitosugi, T; Shimada, T; Hasegawa, T

    2007-01-01

    Nb 0.06 Sn x Ti 0.94-x O 2 (x ≤ 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of λ = 500 nm is estimated to be 12.4% for Nb 0.06 Sn 0.3 Ti 0.64 O 2 thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO 2 . Low resistivity on the order of 10 -4 Ω cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb 0.06 Sn x Ti 0.94-x O 2 thin films (x ≤ 0.2). Optical and transport analyses demonstrate that doping Sn into Nb 0.06 Ti 0.94 O 2 can reduce the refractivity while maintaining low resistivity and high transparency

  20. Green light emission in aluminum oxide powders doped with different terbium concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Mariscal B, L; Falcony, C. [IPN, Centro de Investigacion y de Estudios Avanzados, 07360 Ciudad de Mexico (Mexico); Carmona T, S.; Murrieta, H.; Sanchez A, M. A. [UNAM, Instituto de Fisica, 04510 Ciudad de Mexico (Mexico); Vazquez A, R. [IPN, Escuela Superior de Computo, 07738 Ciudad de Mexico (Mexico); Garcia R, C. M., E-mail: mariscal2005@gmail.com [UNAM, Facultad de Ciencias, 04510 Ciudad de Mexico (Mexico)

    2016-11-01

    Different emission intensities presented in aluminum oxide phosphors corresponding to different concentrations of doping performed with terbium are analyzed. The phosphors were synthesized by the evaporation technique and were characterized by photo and cathodoluminescence, X-ray diffraction and EDS techniques for different incorporation percentages of terbium as dopant; they show characteristic transitions in 494, 543, 587 and 622 nm, corresponding to {sup 5}D{sub 4} → {sup 7}F{sub 6}, {sup 5}D{sub 4} → {sup 7}F{sub 5}, {sup 5}D{sub 4} → {sup 7}F{sub 4} and {sup 5}D{sub 4} → {sup 7}F{sub 3}, respectively when they are excited with λ{sub exc} = 380 nm wavelength at room temperature. The results of X-ray diffraction show the presence of α-Al{sub 2}O{sub 3} phases with peaks located at 2θ = 25.78, 35.34, 37.96, 43.56, 45.8, 52.74, 57.7, 61.5, 66.74, 68.44, 77.12 and 80.94, and the δ-Al{sub 2}O-3 phase 2θ = 32.82, 45.8, 61.36 and 66.74. These compounds were heat treated for two hours at 1100 degrees Celsius. EDS analyzes indicate that these compounds have close to 60% oxygen around of 40% aluminum in the presence of terbium as dopant which indicates a stoichiometry close to the expected one for alumina. (Author)

  1. Room temperature synthesis of Mn{sup 2+} doped ZnS d-dots and observation of tunable dual emission: Effects of doping concentration, temperature, and ultraviolet light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kole, A. K.; Kumbhakar, P. [Nanoscience Laboratory, Department of Physics, National Institute of Technology, Durgapur 713209, West Bengal (India); Tiwary, C. S. [Department of Materials Engineering, Indian Institute of Science (IISc.), Bangalore 560012 (India)

    2013-03-21

    Mn{sup 2+} doped (0-50.0 molar %) ZnS d-dots have been synthesized in water medium by using an environment friendly low cost chemical technique. Tunable dual emission in UV and yellow-orange regions is achieved by tailoring the Mn{sup 2+} doping concentration in the host ZnS nanocrystal. The optimum doping concentration for achieving efficient photoluminescence (PL) emission is determined to be {approx}1.10 (at. %) corresponding to 40.0 (molar %) of Mn{sup 2+} doping concentration used during synthesis. The mechanism of charge transfer from the host to the dopant leading to the intensity modulated tunable (594-610 nm) yellow-orange PL emission is straightforwardly understood as no capping agent is used. The temperature dependent PL emission measurements are carried out, viz., in 1.10 at. % Mn{sup 2+} doped sample and the experimental results are explained by using a theoretical PL emission model. It is found that the ratio of non-radiative to radiative recombination rates is temperature dependent and this phenomenon has not been reported, so far, in Mn{sup 2+} doped ZnS system. The colour tuning of the emitted light from the samples are evident from the calculated chromaticity coordinates. UV light irradiation for 150 min in 40.0 (molar %) Mn{sup 2+} doped sample shows an enhancement of 33% in PL emission intensity.

  2. Control of oxygen vacancies and Ce+3 concentrations in doped ceria nanoparticles via the selection of lanthanide element

    International Nuclear Information System (INIS)

    Shehata, N.; Meehan, K.; Hudait, M.; Jain, N.

    2012-01-01

    The effect of lanthanides that have positive association energies with oxygen vacancies, such as samarium and neodymium, and the elements with negative association energies, such as holmium and erbium, on ionization state of cerium and, consequentially, the oxygen vacancy concentration in doped ceria nanoparticles are investigated in this article. Structural and optical characterizations of the doped and undoped ceria nanoparticles, synthesized using chemical precipitation, are carried out using transmission electron microscopy, X-ray diffractometry, optical absorption spectroscopy, and fluorescence spectroscopy. It is deduced that the negative association energy dopants decrease the conversion of Ce +4 into Ce +3 and, hence, scavenge the oxygen vacancies, evidenced by the observed increase in the allowed direct bandgap, decrease in the integrated fluorescence intensity, and increased the size of doped nanoparticles. The opposite trends are obtained when the positive association dopants are used. It is concluded that the determining factor as to whether a lanthanide dopant in ceria acts as a generator or scavenger of oxygen vacancies in ceria nanoparticles is the sign of the association energy between the element and the oxygen vacancies. The ability to tailor the ionization state of cerium and the oxygen vacancy concentration in ceria has applications in a broad range of fields, which include catalysis, biomedicine, electronics, and environmental sensing.

  3. Thermal lens study of thermo-optical properties and concentration quenching of Er3+-doped lead pyrophosphate based glasses

    Energy Technology Data Exchange (ETDEWEB)

    Santos, C. C. [Universidade Federal do Ceara, Ceara, Brazil; Rocha, U. [Grupo de Fotônica e Fluidos Complexos, Instituto de Física, Brazil; Guedes, Ilde [Universidade Federal do Ceara, Ceara, Brazil; Vermelho, M. V. D. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil; Boatner, Lynn A [ORNL; Jacinto, C. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil

    2012-01-01

    In this work, we have used the thermal lens technique combined with conventional spectroscopy to characterize the thermo-optical properties of Er3+-doped lead pyrophosphate-based glasses. More precisely, we have investigated and quantified experimentally the fluorescence quantum efficiencies of the Er3+ levels, and we describe the role of concentration quenching effects. The fluorescence quantum efficiency of the 4I13/2 level is very high when compared to other phosphate glasses, while that of the green-coupled levels is very small. Other important photonic materials parameters, such as the thermal diffusivity and temperature coefficient of the optical path length change, were obtained and compared with those of other glass systems. The cumulative results obtained here for the Er-doped lead pyrophosphate glass show that this material is a good candidate for photonic applications with a characteristic Er3+ infrared emission around 1550 nm.

  4. Defect-induced luminescence in sol-gel silica samples doped with Co(II) at different concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Sandoval, S. [Centro de Investigacion y Estudios Avanzados, Queretaro, Apdo. Postal 1-798, Queretaro, Qro. 76001 (Mexico); Estevez, M. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico); Pacheco, S. [Instituto Mexicano del Petroleo, Av. 100 metros (Mexico); Vargas, S. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico); Rodriguez, R. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico)], E-mail: rogelior@servidor.unam.mx

    2007-12-20

    The defect-induced luminescence properties of silica samples prepared by the sol-gel method and doped with Co(II) are reported. Silica monoliths doped with different concentrations of Co(II) were laser irradiated (He-Ne 632.8 nm) producing fluorescence. However, this fluorescence is exponentially reduced with the irradiation time, to practically disappear. The rate the fluorescence decays can be well modeled with a double exponential function of the irradiation time, containing two different relaxation times; a baseline is also required to take into account some residual fluorescence. The characteristic times involved in this luminescence quenching process are in the range of seconds. This luminescence suppression can be associated to the local heating produced by the laser irradiation when focused in a small area (2 {mu}m in diameter) on the sample. This heating process reduces physical (grain boundaries, surface states) and chemical (oxygen vacancies produced by the dopant) defects in the sample.

  5. POSSIBLE RAMIFICATIONS OF HIGHER MERCURY CONCENTRATIONS IN FILLET TISSUE OF SKINNIER FISH

    Science.gov (United States)

    Mercury concentrations were found to be statistically higher in the fillet tissue of the skinnier individuals of a fish species (striped bass) that was experiencing starvation when collected from Lake Mead, which is located on the Arizona-Nevada border. This is considered a conse...

  6. Concentration and behavior of radiocesium in higher basidiomycetes in some Kanto and the Koshin districts, Japan

    International Nuclear Information System (INIS)

    Sugiyama, Hideo; Iwashima, Kiyoshi; Shibata, Hisashi.

    1990-01-01

    Concentration of 137 Cs, 134 Cs and potassium were measured in several higher fungi and in substrates, soils, woods and litters in some Kanto and the Koshin districts, Japan, following the Chernobyl accident during October to November 1989. 137 Cs concentrations in fungi were in the range of 0.7-101 Bq kg -1 · fresh. Maximum 137 Cs level in them was observed in Boletopsis leucomelas (Pers.: Fr.) Fayod. Significantly higher levels of concentration ratios of 137 Cs in fungi to substrates (e.g.; 137 Cs concentration · fresh in fungus/ 137 Cs concentration · dry in soil), 10 -1 to 10 x 10 -1 , were found nearly 10 to 1000 times as much as leaf vegetables, root crops and potatoes to substrates. It was confirmed that levels of concentration ratios of potassium were similar to those of 137 Cs. In all fungi, 134 Cs which released from the Chernobyl accident and is not present in nuclear weapons fallout was not detected. (author)

  7. Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

    Energy Technology Data Exchange (ETDEWEB)

    Gürbüz, Osman, E-mail: osgurbuz@yildiz.edu.tr; Okutan, Mustafa

    2016-11-30

    Highlights: • Magnetic material of Cr and semiconductor material of ZnO were grown by the magnetron sputtering co-sputter technique. • Perfect single crystalline structures were grown. • DC and AC conductivity with dielectric properties as a function of frequency (f = 5Hz–13 MHz) at room temperature were measured and compared. • Cr doped ZnO can be used in microwave, sensor and optoelectronic devices as the electrical conductivity increases while dielectric constant decreases with the Cr content. - Abstract: An undoped zinc oxide (ZnO) and different concentrations of chromium (Cr) doped ZnO Cr{sub x}ZnO{sub 1−x} (x = 3.74, 5.67, 8.10, 11.88, and 15.96) thin films were prepared using a magnetron sputtering technique at room temperature. These films were characterized by X-ray diffraction (XRD), High resolution scanning electron microscope (HR-SEM), and Energy dispersive X-ray spectrometry (EDS). XRD patterns of all the films showed that the films possess crystalline structure with preferred orientation along the (100) crystal plane. The average crystallite size obtained was found to be between 95 and 83 nm which was beneficial in high intensity recording peak. Both crystal quality and crystallite sizes decrease with increasing Cr concentration. The crystal and grain sizes of the all film were investigated using SEM analysis. The surface morphology that is grain size changes with increase Cr concentration and small grains coalesce together to form larger grains for the Cr{sub 11.88}ZnO and Cr{sub 15.96}ZnO samples. Impedance spectroscopy studies were carried out in the frequencies ranging from 5 Hz to 13 MHz at room temperature. The undoped ZnO film had the highest dielectric value, while dielectric values of other films decreased as doping concentrations increased. Besides, the dielectric constants decreased whereas the loss tangents increased with increasing Cr content. This was considered to be related to the reduction of grain size as Cr content in Zn

  8. Wideband and flat-gain amplifier based on high concentration erbium-doped fibres in parallel double-pass configuration

    International Nuclear Information System (INIS)

    Hamida, B A; Cheng, X S; Harun, S W; Naji, A W; Arof, H; Al-Khateeb, W; Khan, S; Ahmad, H

    2012-01-01

    A wideband and flat gain erbium-doped fibre amplifier (EDFA) is demonstrated using a hybrid gain medium of a zirconiabased erbium-doped fibre (Zr-EDF) and a high concentration erbium-doped fibre (EDF). The amplifier has two stages comprising a 2-m-long ZEDF and 9-m-long EDF optimised for C- and L-band operations, respectively, in a double-pass parallel configuration. A chirp fibre Bragg grating (CFBG) is used in both stages to ensure double propagation of the signal and thus to increase the attainable gain in both C- and L-band regions. At an input signal power of 0 dBm, a flat gain of 15 dB is achieved with a gain variation of less than 0.5 dB within a wide wavelength range from 1530 to 1605 nm. The corresponding noise figure varies from 6.2 to 10.8 dB within this wavelength region.

  9. Evaluation of surface energy state distribution and bulk defect concentration in DSSC photoanodes based on Sn, Fe, and Cu doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Ekanayake, Piyaisiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research -A*STAR, 3 Research Link, 117602 (Singapore); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Locked Bag 4, Maroochydore DC, Queensland, 4558 (Australia); Hobley, Jonathan [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Chellappan, Vijila [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Gorelik, Sergey; Subramanian, Gomathy Sandhya [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Lim, Chee Ming [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam)

    2015-10-01

    Graphical abstract: - Highlights: • The structural, optical and optoelectronic properties of 1 mol.% Fe, Sn and Cu doped TiO{sub 2} have been compared. • Transient lifetimes for pure TiO{sub 2} and Sn doped TiO{sub 2} were considerably shorter than Fe and Cu doped TiO{sub 2}. • A good correlation between the bulk defects and transient decay for the doped TiO{sub 2} powders was observed. • Photon to current conversion efficiency of DSSC based on the metal doped TiO{sub 2} were in order Sn-TiO{sub 2} > Cu-TiO{sub 2} > Pure >> Fe-TiO{sub 2}. • DSSC based on Fe doped photoanodes is limited by a high concentration of surface free holes observed at 433 nm. - Abstract: Electron transfer dynamics in the oxide layers of the working electrodes in both dye-sensitized solar cells and photocatalysts greatly influences their performance. A proper understanding of the distribution of surface and bulk energy states on/in these oxide layers can provide insights into the associated electron transfer processes. Metal ions like Iron (Fe), Copper (Cu) and Tin (Sn) doped onto TiO{sub 2} have shown enhanced photoactivity in these processes. In this work, the structural, optical and transient properties of Fe, Cu and Sn doped TiO{sub 2} nanocrystalline powders have been investigated and compared using EDX, Raman spectroscopy, X-ray Photoelectron spectroscopy (XPS), and Transient Absorption spectroscopy (TAS). Surface free energy states distributions were probed using Electrochemical Impedance spectroscopy (EIS) on Dye Sensitized Solar Cells (DSSC) based on the doped TiO{sub 2} photoanodes. Raman and XPS Ti2p{sub 3/2} peak shifts and broadening showed that the concentration of defects were in the order: Cu doped TiO{sub 2} > Fe doped TiO{sub 2} > Sn doped TiO{sub 2} > pure TiO{sub 2}. Nanosecond laser flash photolysis of Fe and Cu doped TiO{sub 2} indicated slower transient decay kinetics than that of Sn doped TiO{sub 2} or pure TiO{sub 2}. A broad absorption peak and fast

  10. Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

    Science.gov (United States)

    Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.

    2017-06-01

    Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

  11. Flurbiprofen concentration in soft tissues is higher after topical application than after oral administration

    Science.gov (United States)

    Kai, Shuken; Kondo, Eiji; Kawaguchi, Yasuyuki; Kitamura, Nobuto; Yasuda, Kazunori

    2013-01-01

    Aim To compare tissue concentrations of flurbiprofen resulting from topical application and oral administration according to the regulatory approved dosing guidelines. Method Sixteen patients were included in this study. Each patient was randomly assigned to the topical application or oral administration group. In each group, a pair of tapes or a tablet, containing a total of 40 mg flurbiprofen, was administered twice at 16 and 2 h before the surgery. Results The flurbiprofen concentration in the fat, tendon, muscle and periosteum tissues was significantly higher (P flurbiprofen to the human body, particularly to soft tissues near the body surface. PMID:22822928

  12. Growth and scintillation properties of Pr doped YAP with different Pr concentrations

    International Nuclear Information System (INIS)

    Yanagida, Takayuki; Kamada, Kei; Fujimoto, Yutaka; Sugiyama, Makoto; Furuya, Yuki; Yamaji, Akihiro; Yokota, Yuui; Yoshikawa, Akira

    2010-01-01

    Pr 3+ 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micro-pulling down (μ-PD) method. Pr 3+ 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The μ-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under 137 Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400±2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr 3+ 5d-4f transition.

  13. Growth and scintillation properties of Pr doped YAP with different Pr concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Yanagida, Takayuki, E-mail: t_yanagi@tagen.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kamada, Kei; Fujimoto, Yutaka; Sugiyama, Makoto; Furuya, Yuki [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yamaji, Akihiro [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yokota, Yuui [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

    2010-11-21

    Pr{sup 3+} 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micro-pulling down ({mu}-PD) method. Pr{sup 3+} 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The {mu}-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under {sup 137}Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400{+-}2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr{sup 3+} 5d-4f transition.

  14. Cocaine use is associated with a higher prevalence of elevated ST2 concentrations.

    Science.gov (United States)

    van Wijk, Xander M R; Vittinghoff, Eric; Wu, Alan H B; Lynch, Kara L; Riley, Elise D

    2017-09-01

    Cocaine is a well-known risk factor for acute cardiac events, but the effects in users outside of acute events are less clear. We investigated a possible association between cocaine use and the concentration of a novel biomarker for cardiac stress and heart failure, ST2. A case-control study was conducted to compare ST2 concentrations by the presence of cocaine in patients presenting for care, but not cardiac care, at an urban safety net hospital. In samples taken from 100 cocaine-positive and 100 cocaine-negative patients, the presence of cocaine was associated with ST2 concentrations>35ng/mL. Serum concentrations of benzoylecgonine, a major cocaine metabolite, were significantly correlated with ST2 concentrations. Cocaine use is associated with subclinical cardiac stress and damage outside of acute cardiac events. This information could add to better stratification of cocaine users with elevated ST2 concentrations who may be at higher risk for developing heart failure and other cardiac complications. Copyright © 2017 The Canadian Society of Clinical Chemists. Published by Elsevier Inc. All rights reserved.

  15. Serum vitamin E concentrations among highly functioning hip fracture patients are higher than in nonfracture controls.

    Science.gov (United States)

    D'Adamo, Christopher R; Shardell, Michelle D; Hicks, Gregory E; Orwig, Denise L; Hochberg, Marc C; Semba, Richard D; Yu-Yahiro, Janet A; Ferrucci, Luigi; Magaziner, Jay S; Miller, Ram R

    2011-03-01

    fracture patients demonstrated higher vitamin E concentrations. Thus, the relatively high degree of function among this cohort of hip fracture patients may explain their higher-than-expected vitamin E concentrations. Copyright © 2011 Elsevier Inc. All rights reserved.

  16. Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

    International Nuclear Information System (INIS)

    Richter, Armin; Benick, Jan; Kimmerle, Achim; Hermle, Martin; Glunz, Stefan W.

    2014-01-01

    Thin layers of Al 2 O 3 are well known for the excellent passivation of p-type c-Si surfaces including highly doped p + emitters, due to a high density of fixed negative charges. Recent results indicate that Al 2 O 3 can also provide a good passivation of certain phosphorus-diffused n + c-Si surfaces. In this work, we studied the recombination at Al 2 O 3 passivated n + surfaces theoretically with device simulations and experimentally for Al 2 O 3 deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal due to depletion or weak inversion of the charge carriers at the c-Si/Al 2 O 3 interface. This pronounced maximum was also observed experimentally for n + surfaces passivated either with Al 2 O 3 single layers or stacks of Al 2 O 3 capped by SiN x , when activated with a low temperature anneal (425 °C). In contrast, for Al 2 O 3 /SiN x stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n + diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al 2 O 3 /SiN x stacks can provide not only excellent passivation on p + surfaces but also on n + surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments

  17. Effect of doping of OH- and CN- on the liberation of I2 molecules in KI by gamma-irradiation, impurity concentration effect

    International Nuclear Information System (INIS)

    Shirke, A.K.; Pode, R.B.; Deshmukh, B.T.

    1996-01-01

    Photodecomposition of pure and doped KI powder (KI:KOH; KI:KCN; Impurity concentration, 100, 300, 500, 700 and 1000 ppm) to produce free I 2 molecules during gamma irradiation is studied with the help of absorption and IR measurements. Large number of I 2 molecules are formed in pure KI as compared to the doped samples. Hydroxide impurity increases the rate of liberation of I 2 molecules whereas the cyanide impurity decreases the rate of liberation of I 2 molecules. (Author)

  18. Electron transport investigation of layered MoO3 oxides doped with different concentrations of Nb2O5 oxide

    International Nuclear Information System (INIS)

    Al-Khawaja, S.; Kasem, M.

    2008-07-01

    The dc and ac electric conductivity has been studied for numerous samples of molybdenum oxide MoO 3 doped with niobium oxide Nb 2 O 5 elaborated via the solid state reactions. By means of the electric resistivity and dielectricity curves obtained as a function of temperature, and according to the dopant concentration, the behaviour of these compounds has been allocated. Most of the investigated samples, which are insulating at room temperature, have been witnessed to exhibit simultaneously two different electric comportments; metallic and semiconducting within the range of low and high temperatures respectively, designated by a critical temperature related to the nature of the material. Both of these behaviours are attributed electronically to ionic conduction mechanism, occurring in the solid material formed upon doping with Nb 2 O 5 , which is utterly diffused into the layered structure of MoO 3 particularly for x≥40% concentrations and accompanied by relaxation in the dielectric function between 5 Hz and 13 M Hz.(Authors)

  19. Luminescence study of Eu3+ doped GdVO4 nanoparticles: Concentration, particle size, and core/shell effects

    Science.gov (United States)

    Singh, N. Shanta; Ningthoujam, R. S.; Devi, L. Romila; Yaiphaba, N.; Sudarsan, V.; Singh, S. Dorendrajit; Vatsa, R. K.; Tewari, R.

    2008-11-01

    Nanoparticles of GdVO4 doped with Eu3+ and core/shell of GdVO4:Eu3+/GdVO4 are prepared by urea hydrolysis method using ethylene glycol as capping agent as well as reaction medium at 130 °C. Unit cell volume increases when GdVO4 is doped with Eu3+ indicating the substitution of Gd3+ lattice sites by Eu3+. From luminescence study, it is confirmed that there is no particle size effect on emission positions of Eu3+. Optimum luminescence intensity is found to be in 5-10 at. % Eu3+. Above these concentrations, luminescence intensity decreases due to concentration quenching effect. There is an enhancement in luminescence intensity of core/shell nanoparticles. This has been attributed to the reduction in surface inhomogenities of Eu3+ surroundings by bonding to GdVO4 shell. The lifetime for D50 level increases with annealing and core/shell formation.

  20. Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

    Science.gov (United States)

    Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.

  1. Mechanical properties of pure and doped InP single crystals under concentrated loading

    International Nuclear Information System (INIS)

    Boyarskaya, Yu.S.; Grabko, D.Z.; Medinskaya, M.I.; Palistrant, N.A.

    1997-01-01

    The mechanical properties of pure and doped (Fe, Zn, Sn) InP single crystals were investigated in the temperature interval from 293 to 600 K. It was shown that impurity hardening (the microhardness increase) was more pronounced at elevated temperatures than at 293 K. This is conditioned by braking of the moving dislocations with impurities which is more observed in the the high temperature region. The obvious anisotropy of the scratch hardness was revealed at room temperature for the (001) face of crystals under investigation. This anisotropy decreased sharply in increasing the temperature from 293 to 600 K

  2. Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

    International Nuclear Information System (INIS)

    Gürbüz, Osman; Kurt, İsmail; Çalışkan, Serkan; Güner, Sadık

    2015-01-01

    Highlights: • RF magnetron sputtering technique seems to be very efficient method for fabrication of Al doped ZnO (AZO) films. • Long range single crystalline structure improves with annealing process. • Optical properties became much better after annealing process especially for the AZO films that include high Al concentration. • Much greater conductivity with increasing Al concentration and annealing process. • AZO films have potential applicability in spintronic devices. - Abstract: The pure ZnO and Al-doped ZnO (AZO) thin films (thickness: 200 nm) were prepared on both side polished silica (SiO 2 ) substrates via RF magnetron sputtering at room temperature by using 2.5 inches high-purity ZnO (99.9%) and Al (99.9%) targets. The samples were annealed at 300 °C, 400 °C and 500 °C for 45 min in N 2 ambient in quartz annealing furnace system, respectively. We investigated the effects of various Al concentrations and annealing treatment on the structural, electrical, and optical properties of films. The preferred crystallization was observed along c axis (single (0 0 2) diffraction peak) from substrate surface assigning the single crystalline Würtzite lattice for pure ZnO and AZO thin films. Although increasing Al concentration decreases the order of crystallization of as-grown films, annealing process increases the long range crystal order. The crystallite sizes vary between minimum 12.98 nm and maximum 20.79 nm for as-grown and annealed samples. The crystallite sizes decrease with increasing Al concentration but increase with increasing annealing temperature as general trend. The grain size and porosity of films change with annealing treatment. The smaller grains coalesce together to form larger grains for many films. However, a reverse behavior is seen for Al 2.23 ZnO and Al 12.30 ZnO samples. That is, Al concentration plays critical role as well as temperature on grain size. Low percent optical transmittance (T%) is observed due to higher Al

  3. Crystal growth and scintillation properties of Pr-doped oxyorthosilicate for different concentration

    Energy Technology Data Exchange (ETDEWEB)

    Totsuka, Daisuke, E-mail: totsuka@mail.tagen.tohoku.ac.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co. Ltd (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Fujimoto, Yutaka [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Pejchal, Jan [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Institute of Physics AS CR, Cukrovarnicka 10, Prague 6, 162-53 (Czech Republic); Yokota, Yuui [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

    2011-07-01

    0.05, 0.1 and 0.25 mol% Pr (with respect to Lu) doped Lu{sub 2}SiO{sub 5} (LSO) single crystals were grown by the micro-pulling down ({mu}-PD) method. The grown crystals were transparent, and a slight segregation of Pr{sup 3+} was observed both in the crystal cross-section and growth direction. Transparency in the visible wavelength range was about 80% in all the crystals. Intense absorptions related with the Pr{sup 3+} 4f-5d transitions were observed around 230 and 255 nm, and weak absorptions due to the 4f-4f transitions were detected around 450 nm. In radioluminescence spectra, the Pr{sup 3+} 5d-4f transitions were observed around 275and 310 nm, and emissions due to the 4f-4f transition were observed around 500 nm. In the pulse height analysis using {sup 137}Cs gamma-ray excitation, Pr 0.1% doped sample showed the highest light yield of 2,800 ph/MeV. In the decay time measurements using different excitation sources (photoluminescence, X- and gamma-ray), two different processes related to the 5d-4f emission peaks were found. Fast decay component corresponds to direct excitation of Pr{sup 3+} (4-6 ns) and slower component (25 ns) reflects the energy migration process from the host lattice to the emission center.

  4. Effect of concentration variation on 2.0 µm emission of Ho3+-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 oxyfluorosilicate glasses

    Science.gov (United States)

    Gelija, Devarajulu; Borelli, Deva Prasad Raju

    2018-02-01

    The concentration variation of Ho3+ ion-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 glasses has been prepared by conventional melt quenching method. The thermal stability of 1 mol % of Ho3+-doped oxyfluorosilicate glass has been calculated using the differential thermal analysis (DTA) spectra. The phenomenological Judd-Ofelt intensity parameters Ωλ ( λ = 2, 4 and 6) were calculated for all concentrations of Ho3+ ions. The luminescence spectra in visible region of Ho3+ ion-doped glasses were recorded under the excitation wavelength of 452 nm. The spectra consists of several intense emission bands (5F4, 5S2) → 5I8 (547 nm), 5F3 → 5I8 (647 nm), 5F5 → 5I7 (660 nm) and (5F4, 5S2) → 5I7 (750 nm) in the range 500-780 nm. The fluorescence emission at ˜2.0 µm (5I7 → 5I8) was observed under the excitation of 488 nm Ar-ion laser. The stimulated emission cross section for 5I7 → 5I8 transition (˜2.0 µm) varies from 8.46 to 9.52 × 10-21 cm2, as calculated by the Fuchtbauer-Ladenburg (FL) theory. However, Mc-Cumber theory was used to calculate emission cross section values about 4.24-5.75 × 10-21 cm2 for the 5I7 → 5I8 transition in all concentrations of Ho3+-doped oxyfluorosilicate glasses. Therefore, these results reveal that the 0.5 mol % of Ho3+-doped oxyfluorosilicate glasses, exhibiting higher emission cross section, has potentially been used for laser applications at ˜ 2.0 µm.

  5. Effect of concentration variation on 2.0 μm emission of Ho3+-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 oxyfluorosilicate glasses

    International Nuclear Information System (INIS)

    Gelija, Devarajulu; Borelli, Deva Prasad Raju

    2018-01-01

    The concentration variation of Ho 3+ ion-doped SiO 2 -Al 2 O 3 -Na 2 CO 3 -SrF 2 -CaF 2 glasses has been prepared by conventional melt quenching method. The thermal stability of 1 mol % of Ho 3+ -doped oxyfluorosilicate glass has been calculated using the differential thermal analysis (DTA) spectra. The phenomenological Judd-Ofelt intensity parameters Ω λ (λ = 2, 4 and 6) were calculated for all concentrations of Ho 3+ ions. The luminescence spectra in visible region of Ho 3+ ion-doped glasses were recorded under the excitation wavelength of 452 nm. The spectra consists of several intense emission bands ( 5 F 4 , 5 S 2 ) → 5 I 8 (547 nm), 5 F 3 → 5 I 8 (647 nm), 5 F 5 → 5 I 7 (660 nm) and ( 5 F 4 , 5 S 2 ) → 5 I 7 (750 nm) in the range 500-780 nm. The fluorescence emission at ∝ 2.0 μm ( 5 I 7 → 5 I 8 ) was observed under the excitation of 488 nm Ar-ion laser. The stimulated emission cross section for 5 I 7 → 5 I 8 transition (∝ 2.0 μm) varies from 8.46 to 9.52 x 10 -21 cm 2 , as calculated by the Fuchtbauer-Ladenburg (FL) theory. However, Mc-Cumber theory was used to calculate emission cross section values about 4.24-5.75 x 10 -21 cm 2 for the 5 I 7 → 5 I 8 transition in all concentrations of Ho 3+ -doped oxyfluorosilicate glasses. Therefore, these results reveal that the 0.5 mol % of Ho 3+ -doped oxyfluorosilicate glasses, exhibiting higher emission cross section, has potentially been used for laser applications at ∝ 2.0 μm. (orig.)

  6. Development of transparent conductive indium and fluorine co-doped ZnO thin films: Effect of F concentration and post-annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hadri, A. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Taibi, M. [University of Mohammed V, LPCMIN, Ecole Normale Superieure, Rabat (Morocco); Loghmarti, M.; Nassiri, C.; Slimani Tlemçani, T. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Mzerd, A., E-mail: mzerd@yahoo.fr [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco)

    2016-02-29

    In the present work ZnO, In doped ZnO and In-F co-doped ZnO (IFZO) films were synthesized on heated glass substrates (350 °C) by the chemical spray technique. The effect of fluorine concentration on the structural, morphological, optical and electrical properties was studied. It was observed from X-ray diffraction (XRD) that the films have a polycrystalline structure and the intensity of the peaks depend on the doping and co-doping concentration. No diffraction peak related to dopants in XRD patterns along with shift in peaks angles to ZnO proved that In and F ions were doped into ZnO thin films. The Raman spectra confirm the hexagonal structure of the as-deposited films, and demonstrated an enhancement of the surface phonon mode of doped and co-doped films as compared to undoped films. The as-deposited films showed an average transmittance above 70%, in the wavelength range of 400–800 nm. A minimum electrical resistivity, in the order of 5.2 × 10{sup −} {sup 2} Ω cm was obtained for the IFZO thin film with 5 at.% F doping. Moreover, the electrical properties of doped and co-doped films were enhanced after post-deposition annealing. It was found that post-annealed thin films at 350 °C showed a decrease of one order of magnitude of the resistivity values. Such a transparent and conducting thin film can be suitable for optical and electrical applications owing to their low resistivity combined with high transmittance in the visible range. - Highlights: • Conductive transparent ZnO, IZO, IFZO thin films were deposited by spray pyrolysis. • Doping and co-doping affect morphology and optoelectrical properties. • As deposited film with high fluorine content exhibited high carrier mobility (55 cm{sup 2} V{sup −} {sup 1} s{sup −} {sup 1}). • Correlation between intrinsic defects and carrier mobility was observed. • Post-annealing in Ar atmosphere improves conductivity.

  7. Photoluminescence Spectroscopy of Rhodamine 800 Aqueous Solution and Dye-Doped Polymer Thin-Film: Concentration and Solvent Effects

    Science.gov (United States)

    Le, Khai Q.; Dang, Ngo Hai

    2018-05-01

    This paper investigates solvent and concentration effects on photoluminescence (PL) or fluorescence properties of Rhodamine 800 (Rho800) dyes formed in aqueous solution and polymer thin-film. Various commonly used organic solvents including ethanol, methanol and cyclopentanol were studied at a constant dye concentration. There were small changes in the PL spectra for the different solvents in terms of PL intensity and peak wavelength. The highest PL intensity was observed for cyclopentanol and the lowest for ethanol. The longest peak wavelength was found in cyclopentanol (716 nm) and the shortest in methanol (708 nm). Dissolving the dye powder in the methanol solvent and varying the dye concentration in aqueous solution from the high concentrated solution to highly dilute states, the wavelength tunability was observed between about 700 nm in the dilute state and 730 nm at high concentration. Such a large shift may be attributed to the formation of dye aggregates. Rho800 dye-doped polyvinyl alcohol (PVA) polymer thin-film was further investigated. The PL intensity of the dye in the form of thin-film is lower than that of the aqueous solution form whereas the peak wavelength is redshifted due to the presence of PVA. This paper, to our best knowledge, reports the first study of spectroscopic properties of Rho800 dyes in various forms and provides useful guidelines for production of controllable organic luminescence sources.

  8. Concentration dependent spectroscopic properties of Dy3+ ions doped boro-phosphate glasses

    Science.gov (United States)

    Mariyappan, M.; Marimuthu, K.

    2016-05-01

    Dy3+ ions doped boro-phosphate glasses have been synthesized by melt quenching method and characterized through FTIR, absorption and luminescence spectral measurements. The presence of various stretching and bending vibrations of different borate and phosphate groups were identified from the FTIR spectra. In order to examine the electronic band structure of the studied glasses, Optical energy gap (Eopt) and Urbach energy (ΔE) values were estimated from the absorption spectra. The Judd-Ofelt (JO) intensity parameters were calculated to examine the symmetry of the ligand environment around the Dy3+ ions site. The emission spectra exhibit two intense emission bands at around 482 nm (blue) and 574 nm (yellow) corresponding to the 4F9/2→6H15/2 and 4F9/2→6H13/2 transitions respectively. The emission spectra were characterized through Commission International d'Eclairage (CIE) 1931 chromaticity diagram to explore its suitability for WLED applications.

  9. SU-F-T-239: Evaluation of Plastic Scintillator Light Output for Various Lead Doping Concentrations: Towards LET Detection

    International Nuclear Information System (INIS)

    Nusrat, H; Pang, G; Sarfehnia, A

    2016-01-01

    Purpose: This work seeks to develop a beam quality meter using multiple differently doped plastic scintillators that are thus intrinsically beam-quality dependent. Plastic scintillators spontaneously emit visible light upon irradiation; the amount of light produced is dependent on stopping power (closely related to LET) according to Birks’ law. Doping plastic scintillators can be used to tune their sensitivity to specific LET ranges. Methods: GEANT4.10.1 Monte Carlo (MC) was used to evaluate the response of various scintillator dopant combinations. MC radiation transport and scintillator light response were validated against previously published literature. Current work involves evaluating detector response experimentally; to that end, a detector prototype with interchangeable scintillator housing was constructed. Measurement set-up guides light emitted by the scintillator to a photomultiplier tube via a glass taper junction coupled to an optical fiber. The resulting signal is measured by an electrometer, and normalized to dose readout from a diode. Measurements have been done using clinical electron and orthovoltage beams. MC response (simulated scintillator light normalized to dose scored inside the scintillating volume) was evaluated for four different LET radiations for an undoped and 1%Pb doped scintillator (σ=0.85%). Simulated incident electrons included: 0.05, 0.1, 0.2, 6, 12, and 18 MeV; these energies correspond to a range of stopping power (related to LET) values ranging from 1.824 to 11.09 MeVcm"2g"−"1 (SCOL from NIST-ESTAR). Results: Initial MC results show a distinct divergence in scintillator response as LET increases. The response for undoped plastic scintillator indicated a 35.0% increase in signal when going from 18 MeV (low LET) to 0.05 MeV (high LET) while 1%-Pb doped scintillator indicated a 100.9% increase. Conclusion: After validating MC against measurement, simulations will be used to test various concentrations (2%, 4%, 6%) of different

  10. SU-F-T-239: Evaluation of Plastic Scintillator Light Output for Various Lead Doping Concentrations: Towards LET Detection

    Energy Technology Data Exchange (ETDEWEB)

    Nusrat, H [Ryerson University, Toronto, ON (Canada); Pang, G; Sarfehnia, A [Sunnybrook Health Sciences Centre, Toronto, ON (Canada)

    2016-06-15

    Purpose: This work seeks to develop a beam quality meter using multiple differently doped plastic scintillators that are thus intrinsically beam-quality dependent. Plastic scintillators spontaneously emit visible light upon irradiation; the amount of light produced is dependent on stopping power (closely related to LET) according to Birks’ law. Doping plastic scintillators can be used to tune their sensitivity to specific LET ranges. Methods: GEANT4.10.1 Monte Carlo (MC) was used to evaluate the response of various scintillator dopant combinations. MC radiation transport and scintillator light response were validated against previously published literature. Current work involves evaluating detector response experimentally; to that end, a detector prototype with interchangeable scintillator housing was constructed. Measurement set-up guides light emitted by the scintillator to a photomultiplier tube via a glass taper junction coupled to an optical fiber. The resulting signal is measured by an electrometer, and normalized to dose readout from a diode. Measurements have been done using clinical electron and orthovoltage beams. MC response (simulated scintillator light normalized to dose scored inside the scintillating volume) was evaluated for four different LET radiations for an undoped and 1%Pb doped scintillator (σ=0.85%). Simulated incident electrons included: 0.05, 0.1, 0.2, 6, 12, and 18 MeV; these energies correspond to a range of stopping power (related to LET) values ranging from 1.824 to 11.09 MeVcm{sup 2}g{sup −1} (SCOL from NIST-ESTAR). Results: Initial MC results show a distinct divergence in scintillator response as LET increases. The response for undoped plastic scintillator indicated a 35.0% increase in signal when going from 18 MeV (low LET) to 0.05 MeV (high LET) while 1%-Pb doped scintillator indicated a 100.9% increase. Conclusion: After validating MC against measurement, simulations will be used to test various concentrations (2%, 4%, 6%) of

  11. Higher aluminum concentration in Alzheimer's disease after Box-Cox data transformation.

    Science.gov (United States)

    Rusina, Robert; Matěj, Radoslav; Kašparová, Lucie; Kukal, Jaromír; Urban, Pavel

    2011-11-01

    Evidence regarding the role of mercury and aluminum in the pathogenesis of Alzheimer's disease (AD) remains controversial. The aims of our project were to investigate the content of the selected metals in brain tissue samples and the use of a specific mathematical transform to eliminate the disadvantage of a strong positive skew in the original data distribution. In this study, we used atomic absorption spectrophotometry to determine mercury and aluminum concentrations in the hippocampus and associative visual cortex of 29 neuropathologically confirmed AD and 27 age-matched controls. The Box-Cox data transformation was used for statistical evaluation. AD brains had higher mean aluminum concentrations in the hippocampus than controls (0.357 vs. 0.090 μg/g; P = 0.039) after data transformation. Results for mercury were not significant. Original data regarding microelement concentrations are heavily skewed and do not pass the normality test in general. A Box-Cox transformation can eliminate this disadvantage and allow parametric testing.

  12. Methanol-Tolerant Platinum-Palladium Catalyst Supported on Nitrogen-Doped Carbon Nanofiber for High Concentration Direct Methanol Fuel Cells.

    Science.gov (United States)

    Kim, Jiyoung; Jang, Jin-Sung; Peck, Dong-Hyun; Lee, Byungrok; Yoon, Seong-Ho; Jung, Doo-Hwan

    2016-08-15

    Pt-Pd catalyst supported on nitrogen-doped carbon nanofiber (N-CNF) was prepared and evaluated as a cathode electrode of the direct methanol fuel cell (DMFC). The N-CNF, which was directly synthesized by the catalytic chemical vapor deposition from acetonitrile at 640 °C, was verified as having a change of electrochemical surface properties such as oxygen reduction reaction (ORR) activities and the electrochemical double layer compared with common carbon black (CB). To attain the competitive oxygen reduction reaction activity with methanol tolerance, the Pt and Pd metals were supported on the CB or the N-CNF. The physical and electrochemical characteristics of the N-CNF-supported Pt-Pd catalyst were examined and compared with catalyst supported on the CB. In addition, DMFC single cells using these catalysts as the cathode electrode were applied to obtain I-V polarization curves and constant current operating performances with high-concentration methanol as the fuel. Pt-Pd catalysts had obvious ORR activity even in the presence of methanol. The higher power density was obtained at all the methanol concentrations when it applied to the membrane electrode assembly (MEA) of the DMFC. When the N-CNF is used as the catalyst support material, a better performance with high-concentration methanol is expected.

  13. Methanol-Tolerant Platinum-Palladium Catalyst Supported on Nitrogen-Doped Carbon Nanofiber for High Concentration Direct Methanol Fuel Cells

    Directory of Open Access Journals (Sweden)

    Jiyoung Kim

    2016-08-01

    Full Text Available Pt-Pd catalyst supported on nitrogen-doped carbon nanofiber (N-CNF was prepared and evaluated as a cathode electrode of the direct methanol fuel cell (DMFC. The N-CNF, which was directly synthesized by the catalytic chemical vapor deposition from acetonitrile at 640 °C, was verified as having a change of electrochemical surface properties such as oxygen reduction reaction (ORR activities and the electrochemical double layer compared with common carbon black (CB. To attain the competitive oxygen reduction reaction activity with methanol tolerance, the Pt and Pd metals were supported on the CB or the N-CNF. The physical and electrochemical characteristics of the N-CNF–supported Pt-Pd catalyst were examined and compared with catalyst supported on the CB. In addition, DMFC single cells using these catalysts as the cathode electrode were applied to obtain I-V polarization curves and constant current operating performances with high-concentration methanol as the fuel. Pt-Pd catalysts had obvious ORR activity even in the presence of methanol. The higher power density was obtained at all the methanol concentrations when it applied to the membrane electrode assembly (MEA of the DMFC. When the N-CNF is used as the catalyst support material, a better performance with high-concentration methanol is expected.

  14. The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

    International Nuclear Information System (INIS)

    Siddiqua, Poppy; O'Leary, Stephen K.

    2016-01-01

    Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the doping concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the doping concentration selection. The device consequences of these results are then explored.

  15. Advanced Mechanical Properties of a Powder Metallurgy Ti-Al-N Alloy Doped with Ultrahigh Nitrogen Concentration

    Science.gov (United States)

    Shen, J.; Chen, B.; Umeda, J.; Kondoh, K.

    2018-03-01

    Titanium and its alloys are recognized for their attractive properties. However, high-performance Ti alloys are often alloyed with rare or noble-metal elements. In the present study, Ti alloys doped with only ubiquitous elements were produced via powder metallurgy. The experimental results showed that pure Ti with 1.5 wt.% AlN incorporated exhibited excellent tensile properties, superior to similarly extruded Ti-6Al-4V. Further analysis revealed that its remarkably advanced strength could primarily be attributed to nitrogen solid-solution strengthening, accounting for nearly 80% of the strength increase of the material. In addition, despite the ultrahigh nitrogen concentration up to 0.809 wt.%, the Ti-1.5AlN sample showed elongation to failure of 10%. This result exceeds the well-known limitation for nitrogen (over 0.45 wt.%) that causes embrittlement of Ti alloys.

  16. Al-Sn doped ZnO thin film nanosensor for monitoring NO2 concentration

    Directory of Open Access Journals (Sweden)

    G.S. Hikku

    2017-07-01

    Full Text Available The metal oxide semiconductor gas sensor technology is robust and has quick response times. In this work, aluminium and tin co-doped zinc oxide (ASZO thin films were synthesized by a sol–gel dip-coating process as sensors for the greenhouse gas nitrogen dioxide (NO2. The prepared ASZO thin films were characterized using such techniques as X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM and photoluminescence (PL emission studies in order to analyze the elemental confirmation, particle size, surface roughness and optical emission properties, respectively. The XRD data reveals the hexagonal structure of ASZO and that the preferential orientation is along 2θ = 36.19°. SEM images of the ASZO thin film exhibit rod-like formations of ASZO on the substrate. The ASZO films show enhanced sensing behaviour, sensing NO2 gas even at 2 ppm at an operating temperature of 170 °C. The response and recovery times were determined to be 30 and 20 s, respectively.

  17. Concentration dependent spectroscopic properties of Dy{sup 3+} ions doped boro-phosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Mariyappan, M.; Marimuthu, K., E-mail: mari-ram2000@yahoo.com [Department of Physics, Gandhigram Rural Institute - Deemed University, Gandhigram – 624 302 (India)

    2016-05-23

    Dy{sup 3+} ions doped boro-phosphate glasses have been synthesized by melt quenching method and characterized through FTIR, absorption and luminescence spectral measurements. The presence of various stretching and bending vibrations of different borate and phosphate groups were identified from the FTIR spectra. In order to examine the electronic band structure of the studied glasses, Optical energy gap (E{sub opt}) and Urbach energy (ΔE) values were estimated from the absorption spectra. The Judd-Ofelt (JO) intensity parameters were calculated to examine the symmetry of the ligand environment around the Dy{sup 3+} ions site. The emission spectra exhibit two intense emission bands at around 482 nm (blue) and 574 nm (yellow) corresponding to the {sup 4}F{sub 9/2}→{sup 6}H{sub 15/2} and {sup 4}F{sub 9/2}→{sup 6}H{sub 13/2} transitions respectively. The emission spectra were characterized through Commission International d’Eclairage (CIE) 1931 chromaticity diagram to explore its suitability for WLED applications.

  18. Electrochemical oxidation of tramadol in low-salinity reverse osmosis concentrates using boron-doped diamond anodes.

    Science.gov (United States)

    Lütke Eversloh, Christian; Schulz, Manoj; Wagner, Manfred; Ternes, Thomas A

    2015-04-01

    The electrochemical treatment of low-salinity reverse osmosis (RO) concentrates was investigated using tramadol (100 μM) as a model substance for persistent organic contaminants. Galvanostatic degradation experiments using boron-doped diamond electrodes at different applied currents were conducted in RO concentrates as well as in ultra-pure water containing either sodium chloride or sodium sulfate. Kinetic investigations revealed a significant influence of in-situ generated active chlorine besides direct anodic oxidation. Therefore, tramadol concentrations decreased more rapidly at elevated chloride content. Nevertheless, reduction of total organic carbon (TOC) was found to be comparatively low, demonstrating that transformation rather than mineralization was taking place. Early stage product formation could be attributed to both direct and indirect processes, including demethylation, hydroxylation, dehydration, oxidative aromatic ring cleavage and halogenation reactions. The latter led to various halogenated derivatives and resulted in AOX (adsorbable organic halogens) formation in the lower mg/L-range depending on the treatment conditions. Characterisation of transformation products (TPs) was achieved via MS(n) experiments and additional NMR measurements. Based on identification and quantification of the main TPs in different matrices and on additional potentiostatic electrolysis, a transformation pathway was proposed. Copyright © 2014 Elsevier Ltd. All rights reserved.

  19. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations.

    Science.gov (United States)

    Bagastyo, Arseto Y; Batstone, Damien J; Kristiana, Ina; Escher, Beate I; Joll, Cynthia; Radjenovic, Jelena

    2014-08-30

    An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10AhL(-1), and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2mgL(-1)). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ=11mgL(-1) at 2.4AhL(-1)), which rapidly decreased to 4mgL(-1). The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25kWhgCOD(-1) and 0.34kWhgCOD(-1), respectively, yet it did not demonstrate any improvement regarding by-products formation. Copyright © 2014 Elsevier B.V. All rights reserved.

  20. Role of dopant concentration, crystal phase and particle size on microbial inactivation of Cu-doped TiO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sahu, Manoranjan; Wu Bing; Zhu Liying; Jacobson, Craig; Wang Weining; Jones, Kristen; Goyal, Yogesh; Tang, Yinjie J; Biswas, Pratim, E-mail: pbiswas@wustl.edu [Department of Energy, Environmental and Chemical Engineering, Washington University in St Louis, St Louis, MO 63130 (United States)

    2011-10-14

    The properties of Cu-doped TiO{sub 2} nanoparticles (NPs) were independently controlled in a flame aerosol reactor by varying the molar feed ratios of the precursors, and by optimizing temperature and time history in the flame. The effect of the physico-chemical properties (dopant concentration, crystal phase and particle size) of Cu-doped TiO{sub 2} nanoparticles on inactivation of Mycobacterium smegmatis (a model pathogenic bacterium) was investigated under three light conditions (complete dark, fluorescent light and UV light). The survival rate of M. smegmatis (in a minimal salt medium for 2 h) exposed to the NPs varied depending on the light irradiation conditions as well as the dopant concentrations. In dark conditions, pristine TiO{sub 2} showed insignificant microbial inactivation, but inactivation increased with increasing dopant concentration. Under fluorescent light illumination, no significant effect was observed for TiO{sub 2}. However, when TiO{sub 2} was doped with copper, inactivation increased with dopant concentration, reaching more than 90% (>3 wt% dopant). Enhanced microbial inactivation by TiO{sub 2} NPs was observed only under UV light. When TiO{sub 2} NPs were doped with copper, their inactivation potential was promoted and the UV-resistant cells were reduced by over 99%. In addition, the microbial inactivation potential of NPs was also crystal-phase-and size-dependent under all three light conditions. A lower ratio of anatase phase and smaller sizes of Cu-doped TiO{sub 2} NPs resulted in decreased bacterial survival. The increased inactivation potential of doped TiO{sub 2} NPs is possibly due to both enhanced photocatalytic reactions and leached copper ions.

  1. Evolution of the mechanical and tribological properties of DLC thin films doped with low-concentration hafnium on 316L steel

    Science.gov (United States)

    Qi, Meng; Xiao, Jianrong; Gong, Chenyang; Jiang, Aihua; Chen, Yong

    2018-01-01

    Low concentrations (stainless steel and silicon (1 0 0) substrates by magnetron sputtering to attain superior mechanical and tribological properties. Ar and CH4 were used as source gases. The microstructure, chemical composition, and morphology of the Hf-DLC thin films in various concentrations were analyzed using x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Results showed that Hf species transferred from the particulate microstructure to Hf carbide phases, and the surface roughness increased monotonically with increasing Hf concentration. Moreover, the hardness and elastic modulus exhibited high values when the doped Hf concentration was 0.42 at%. Similarly, the tribological behaviors and wear life of Hf-DLC thin films had a low friction coefficient and excellent wear resistance at 0.42 at% Hf concentration. Therefore, 0.42 at% Hf is an optimal doping concentration to improve the mechanical and tribological properties of DLC thin films. Generally, the use of low-concentration Hf doping into DLC thin films is novel, and the present results provide guidance for the selection of suitable and effective concentration to optimize Hf-DLC thin films with superior performance.

  2. The optoelectronic properties and role of Cu concentration on the structural and electrical properties of Cu doped ZnO nanoparticles

    Science.gov (United States)

    Omri, K.; Bettaibi, A.; Khirouni, K.; El Mir, L.

    2018-05-01

    In the current study, we synthesized a Cu-doped ZnO (CZO) nanoparticles material using a sol-gel method with different doping concentrations of Cu (0, 2, 3 and 4 at.%). The control of the Cu concentration on structural, electrical and optical properties of CZO nanoparticles was investigated in detail. The XRD analysis of the CZO nanoparticles reveals the formation of ZnO hexagonal wurtzite structure for all samples which confirm the incorporation of Cu2+ ions into the ZnO lattice by substitution. Furthermore, CZO nanoparticles showed a small red shift of absorption band with the incorporation of Cu from 0 to 4 at.%; i.e. a decreased band gap value from 3.34 eV to 3.27 eV with increasing of Cu doping content. The frequency dispersion of the electric conductivity were studied using the Jonscher universal power law, according to relation σ(ω) = σDC + A ωs(T). Alternative current conductivity increases with increasing Cu content in spite of the decrease the activation energy with copper loading. It was found that the conductivity reached its maximum value for critical Cu concentration of 3 at.%. The frequency relaxation phenomenon was also investigated and all results were discussed in term of the copper doping concentration.

  3. Influence of Doping Concentration on Dielectric, Optical, and Morphological Properties of PMMA Thin Films

    Directory of Open Access Journals (Sweden)

    Lyly Nyl Ismail

    2012-01-01

    Full Text Available PMMA thin films were deposited by sol gel spin coating method on ITO substrates. Toluene was used as the solvent to dissolve the PMMA powder. The PMMA concentration was varied from 30 ~ 120 mg. The dielectric properties were measured at frequency of 0 ~ 100 kHz. The dielectric permittivity was in the range of 7.3 to 7.5 which decreased as the PMMA concentration increased. The dielectric loss is in the range of 0.01 ~ –0.01. All samples show dielectric characteristics which have dielectric loss is less than 0.05. The optical properties for thin films were measured at room temperature across 200 ~ 1000 nm wavelength region. All samples are highly transparent. The energy band gaps are in the range of 3.6 eV to 3.9 eV when the PMMA concentration increased. The morphologies of the samples show that all samples are uniform and the surface roughness increased as the concentration increased. From this study, it is known that, the dielectric, optical, and morphology properties were influenced by the amount of PMMA concentration in the solution.

  4. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

    International Nuclear Information System (INIS)

    Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

    2010-01-01

    The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)

  5. Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-02-01

    Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

  6. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Mani Menaka, S., E-mail: manimenaka.phy@gmail.com [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Umadevi, G. [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Manickam, M. [SRMV College of Arts and Science, Coimbatore, 641020, Tamilnadu (India)

    2017-04-15

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T{sub s} = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  7. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations

    Energy Technology Data Exchange (ETDEWEB)

    Bagastyo, Arseto Y. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Department of Environmental Engineering, Institut Teknologi Sepuluh Nopember, Surabaya 60111 (Indonesia); Batstone, Damien J. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Kristiana, Ina [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Escher, Beate I. [National Research Centre for Environmental Toxicology (Entox), The University of Queensland, Brisbane, QLD 4108 (Australia); Joll, Cynthia [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Radjenovic, Jelena, E-mail: j.radjenovic@uq.edu.au [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia)

    2014-08-30

    Highlights: • 100% of COD and ∼70% of DOC was removed in both cell configurations. • ∼21.7 mg L{sup −1} of AOCl and ∼2.3 mg L{sup −1} of AOBr was formed regardless of the membrane use. • The TEQ was far lower than expected given the high AOCl concentrations. • The undivided cell consumed lower energy compared to the divided cell. - Abstract: An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10 Ah L{sup −1}, and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2 mg L{sup −1}). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ = 11 mg L{sup −1} at 2.4 Ah L{sup −1}), which rapidly decreased to 4 mg L{sup −1}. The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH· electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25 kWh gCOD{sup −1} and 0.34 kWh gCOD{sup −1}, respectively, yet it did not demonstrate any improvement regarding by-products formation.

  8. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Mani Menaka, S.; Umadevi, G.; Manickam, M.

    2017-01-01

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T_s = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  9. Rising atmospheric CO2 concentration may imply higher risk of Fusarium mycotoxin contamination of wheat grains.

    Science.gov (United States)

    Bencze, Szilvia; Puskás, Katalin; Vida, Gyula; Karsai, Ildikó; Balla, Krisztina; Komáromi, Judit; Veisz, Ottó

    2017-08-01

    Increasing atmospheric CO 2 concentration not only has a direct impact on plants but also affects plant-pathogen interactions. Due to economic and health-related problems, special concern was given thus in the present work to the effect of elevated CO 2 (750 μmol mol -1 ) level on the Fusarium culmorum infection and mycotoxin contamination of wheat. Despite the fact that disease severity was found to be not or little affected by elevated CO 2 in most varieties, as the spread of Fusarium increased only in one variety, spike grain number and/or grain weight decreased significantly at elevated CO 2 in all the varieties, indicating that Fusarium infection generally had a more dramatic impact on the grain yield at elevated CO 2 than at the ambient level. Likewise, grain deoxynivalenol (DON) content was usually considerably higher at elevated CO 2 than at the ambient level in the single-floret inoculation treatment, suggesting that the toxin content is not in direct relation to the level of Fusarium infection. In the whole-spike inoculation, DON production did not change, decreased or increased depending on the variety × experiment interaction. Cooler (18 °C) conditions delayed rachis penetration while 20 °C maximum temperature caused striking increases in the mycotoxin contents, resulting in extremely high DON values and also in a dramatic triggering of the grain zearalenone contamination at elevated CO 2 . The results indicate that future environmental conditions, such as rising CO 2 levels, may increase the threat of grain mycotoxin contamination.

  10. Effect of γ-irradiation on the lattice parameter and colour centre concentration in pure Ca2+, Sr2+ and Eu2+ doped KCl crystals

    International Nuclear Information System (INIS)

    Damm, J.Z.; Stepien-Damm, J.

    1980-01-01

    The changes of lattice parameter and colour centre concentration are examined in KCl crystals (both pure and Me 2+ -doped) irradiated by γ-rays at room temperature. For the pure crystals the relative volume change vs. F-centre concentration plot reveals the presence of two stages, one ascribed to the introduction of colour centre pairs (or F centres only) and other to the generation of new dislocations (or new dislocations with trapped-hole centres). In Me 2+ doped crystals the lattice expansion bears a complex character (in the initial irradiation stage a transient maximum appears). Additional anomaly appears in Eu 2+ KCl in the high-dose range where in spite of a distinct F-centre concentration drop a marked raise of the lattice parameter is observed. (author)

  11. Different valence Sn doping - A simple way to detect oxygen concentration variation of ZnO quantum dots synthesized under ultrasonic irradiation.

    Science.gov (United States)

    Yang, Weimin; Zhang, Bing; Zhang, Qitu; Wang, Lixi; Song, Bo; Wu, Fan; Wong, C P

    2017-09-01

    An ultrasonic method is employed to synthesize the Sn doped Zn 0.95 Sn 0.05 O quantum dots with green light emission. Sn 2+ and Sn 4+ ions are used to create different optical defects inside Zn 0.95 Sn 0.05 O quantum dots and the changing trend of oxygen concentration under different ultrasonic irradiation power are investigated. The photoluminescence spectra are employed to characterize the optical defects of Zn 0.95 Sn 0.05 O quantum dots. The UV-vis spectra are used to study the band gap of Zn 0.95 Sn 0.05 O quantum dots, which is influenced by their sizes. The results indicate that ultrasonic power would influence the size of Zn 0.95 Sn 0.05 O quantum dots as well as the type and quantity of defects in ZnO quantum dots. Changing trends in size of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are quite similar with each other, while the changing trends in optical defects types and concentration of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are different. The difference of the optical defects concentration changing between Sn 2+ doped Zn 0.95 Sn 0.05 O quantum dots (V O defects) and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots (O Zn and O i defects) shows that the formation process of ZnO under ultrasonic irradiation wiped oxygen out. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

    Science.gov (United States)

    Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

    2018-02-01

    Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

  13. Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhen-Long [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Ma, Wen-Hai [School of Physical Education, Henan University, Kaifeng 475004 (China); Mao, Yan-Li, E-mail: ylmao1@163.com [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China)

    2014-09-07

    In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

  14. Serum vitamin E concentrations among highly functioning hip fracture patients are higher than in nonfracture controls

    OpenAIRE

    D’Adamo, Christopher R.; Shardell, Michelle D.; Hicks, Gregory E.; Orwig, Denise L.; Hochberg, Marc C.; Semba, Richard D.; Yu-Yahiro, Janet A.; Ferrucci, Luigi; Magaziner, Jay S.; Miller, Ram R.

    2011-01-01

    Malnutrition after hip fracture is common and associated with poor outcomes and protracted recovery. Low concentrations of vitamin E have been associated with incident decline in physical function among older adults and may, therefore, be particularly important to functionally compromised patients hip fracture patients. Serum concentrations of α-tocopherol and γ-tocopherol, the 2 major forms of vitamin E, were assessed in 148 female hip fracture patients 65 years or older from the Baltimore H...

  15. Cobalt doped proangiogenic hydroxyapatite for bone tissue engineering application

    International Nuclear Information System (INIS)

    Kulanthaivel, Senthilguru; Roy, Bibhas; Agarwal, Tarun; Giri, Supratim; Pramanik, Krishna; Pal, Kunal; Ray, Sirsendu S.; Maiti, Tapas K.; Banerjee, Indranil

    2016-01-01

    ABSTRACT: The present study delineates the synthesis and characterization of cobalt doped proangiogenic–osteogenic hydroxyapatite. Hydroxyapatite samples, doped with varying concentrations of bivalent cobalt (Co"2"+) were prepared by the ammoniacal precipitation method and the extent of doping was measured by ICP–OES. The crystalline structure of the doped hydroxyapatite samples was confirmed by XRD and FTIR studies. Analysis pertaining to the effect of doped hydroxyapatite on cell cycle progression and proliferation of MG-63 cells revealed that the doping of cobalt supported the cell viability and proliferation up to a threshold limit. Furthermore, such level of doping also induced differentiation of the bone cells, which was evident from the higher expression of differentiation markers (Runx2 and Osterix) and better nodule formation (SEM study). Western blot analysis in conjugation with ELISA study confirmed that the doped HAp samples significantly increased the expression of HIF-1α and VEGF in MG-63 cells. The analysis described here confirms the proangiogenic–osteogenic properties of the cobalt doped hydroxyapatite and indicates its potential application in bone tissue engineering. - Highlights: • Cobalt (Co"+"2) doped hydroxyapatite (Co-HAp) can be prepared by the wet chemical method. • The concentration of Co"+"2 influences the physico-chemical properties of HAp. • Co-HAp was found to be biocompatible and osteogenic. • Co-HAp enhanced cellular VEGF secretion through HIF-1α stabilization. • The optimum biological performance of Co-HAp was achieved for 0.33% (w/w) Co"+"2 doping.

  16. Effect of heavy Ag doping on the physical properties of ZnO

    Science.gov (United States)

    Hou, Qingyu; Zhao, Chunwang; Jia, Xiaofang; Xu, Zhenchao

    2018-04-01

    The band structure, density of state and absorption spectrum of Zn1‑xAgxO (x = 0.02778, 0.04167) were calculated. Results indicated that a higher doping content of Ag led to a higher total energy, lower stability, higher formation energy, narrower bandgap, more significant red shift of the absorption spectrum, higher relative concentration of free hole, smaller hole effective mass, lower mobility and better conductivity. Furthermore, four types of model with the same doping content of double Ag-doped Zn1‑xAgxO (x = 0.125) but different manners of doping were established. Two types of models with different doping contents of double Ag-doped Zn1‑xAgxO (x = 0.0626, 0.0833) but the same manner of doping, were also established. Under the same doping content and different ordering occupations in Ag double doping, the doped system almost caused magnetic quenching upon the nearest neighbor -Ag-O-Ag- bonding at the direction partial to the a- or b-axis. Upon the next-nearest neighbor of -Ag-O-Zn-O-Ag- bonding at the direction partial to the c-axis, the total magnetic moment of the doped system increased, and the doped system reached a Curie temperature above the room-temperature. All these results indicated that the magnetic moments of Ag double-doped ZnO systems decreased with increased Ag doping content. Within the range of the mole number of the doping content of 0.02778-0.04167, a greater Ag doping content led to a narrower bandgap of the doped system and a more significant red shift in the absorption spectrum. The absorption spectrum of the doped ZnO system with interstitial Ag also shows a red shift.

  17. Higher prices at Canadian gas pumps: international crude oil prices or local market concentration? An empirical investigation

    International Nuclear Information System (INIS)

    Anindya Sen

    2003-01-01

    There is little consensus on whether higher retail gasoline prices in Canada are the result of international crude oil price fluctuations or local market power exercised by large vertically-integrated firms. I find that although both increasing local market concentration and higher average monthly wholesale prices are positively and significantly associated with higher retail prices, wholesale prices are more important than local market concentration. Similarly, crude oil prices are more important than the number of local wholesalers in determining wholesale prices. These results suggest that movements in gasoline prices are largely the result of input price fluctuations rather than local market structure. (author)

  18. Higher-order quasi-phase matched second harmonic generation in periodically poled MgO-doped stoichiometric LiTaO3

    International Nuclear Information System (INIS)

    Yu, Nan Ei; Kurimura, Sunao; Kitamura, Kenji

    2005-01-01

    A periodically poled device was investigated by using fourth-order quasi-phase-matched (QPM) second harmonic generation (SHG) in MgO-doped stoichiometric lithium tantalate (LiTaO 3 ). The effective nonlinear coefficient was found be 2.4 pm/V by using fourth-order QPM SHG at the fundamental wavelength of 1064 nm. For first-order QPM SHG, the effective value of d 33 could be 9.2 pm/V. Using the sensitive higher-order QPM SHG method, we investigated the relationship between the domain duty ratio and the conversion efficiency.

  19. LED and low level laser therapy association in tooth bleaching using a novel low concentration H2O2/N-doped TiO2 bleaching agent

    Science.gov (United States)

    Bezerra Dias, Hércules; Teixeira Carrera, Emanuelle; Freitas Bortolatto, Janaína; Ferrarezi de Andrade, Marcelo; Nara de Souza Rastelli, Alessandra

    2016-01-01

    Since low concentration bleaching agents containing N-doped TiO2 nanoparticles have been introduced as an alternative to conventional agents, it is important to verify their efficacy and the hypersensitivity effect in clinical practice. Six volunteer patients were evaluated for color change and hypersensitivity after bleaching using 35% H2O2 (one session of two 12 min applications) and 6% H2O2/N-doped TiO2 (one session of three 12 min applications) and after low level laser therapy application (LLLT) (780 nm, 40 mW, 10 J.cm-2, 10 s). Based on this case study, the nanobleaching agent provided better or similar aesthetic results than the conventional agent under high concentration, and its association with LLLT satisfactorily decreased the hypersensitivity. The 6% H2O2/N-doped TiO2 agent could be used instead of conventional in-office bleaching agents under high concentrations to fulfill the rising patient demand for aesthetics.

  20. Effect of doping on the electron transport in polyfluorene

    Energy Technology Data Exchange (ETDEWEB)

    Bajpai, Manisha, E-mail: mansa83@gmail.com [Soft Materials Research Laboratory, Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad, 211002 (India); Department of Physics, Banaras Hindu University, Varanasi-221005 (India); Srivastava, Ritu [Physics for Energy Harvesting Division, National Physical Laboratory (Council of Scientific and Industrial Research), Dr K. S. Krishnan Road, New Delhi 110012 (India); Dhar, Ravindra [Soft Materials Research Laboratory, Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad, 211002 (India); Tiwari, R. S. [Department of Physics, Banaras Hindu University, Varanasi-221005 (India)

    2016-05-06

    In this paper, electron transport of pure and DMC doped polyfluorne (PF) films have been studied at various doping concentrations. Pure films show space charge limited conduction with field and temperature dependent mobility. The J–V characteristics of doped PF were ohmic at low voltages due to thermally released carriers from dopant states. At higher voltages the current density increases nonlinearly due to field dependent mobility and carrier concentration thereby filling of tail states of HOMO of the host. The conductivity of doped films were analyzed using the Unified Gaussian Disorder Model (UGDM). The carrier concentration obtained from the fitting show a non-linear dependence on doping concentration which may be due to a combined effect of thermally activated carrier generation and increased carrier mobility.

  1. Structure prediction of boron-doped graphene by machine learning

    Science.gov (United States)

    M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

    2018-06-01

    Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

  2. Targeting higher ferritin concentrations with intravenous iron dextran lowers erythropoietin requirement in hemodialysis patients.

    Science.gov (United States)

    DeVita, M V; Frumkin, D; Mittal, S; Kamran, A; Fishbane, S; Michelis, M F

    2003-11-01

    Although clinical use of recombinant human erythropoietin (rHuEPO) since 1989 has improved anemia in most end-stage renal disease patients, there are still many hemodialysis patients unable to maintain an adequate hematocrit (HCT) without large doses of rHuEPO. This suggests that anemia is not solely a consequence of rHuEPO deficiency, but may be due to other factors including functional iron deficiency. Since the optimal prescription for iron replacement is not yet known, we evaluated the effect of intravenous iron dextran (IVFe) infusion on serum ferritin (SFer) concentration and rHuEPO dose. Our objective was to raise and maintain serum ferritin concentrations to 2 different levels above the National Kidney Foundation Dialysis Outcome Quality Initiative standard of 100 ng/ml to determine whether, and by what degree rHuEPO dose could be lowered. HD patients on i.v. rHuEPO with a SFer concentration > or = 70 ng/ml and an HCT of requirements.

  3. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  4. Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)

    2016-01-01

    Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

  5. Approaches to analysis of data that concentrate near higher-dimensional manifolds

    International Nuclear Information System (INIS)

    Friedman, J.H.; Tukey, J.W.; Tukey, P.A.

    1979-01-01

    The need to explore structure in high-dimensional clouds of data points that may concentrate near (possibly nonlinear) manifolds of lower dimension led to the current development of three new approaches. The first is a computer-graphic system (PRIM'79) that facilitates interactive viewing and manipulation of an ensemble of points. The other two are automatic procedures for separating a cloud into more manageable pieces. One of these (BIDEC) performs successive partitioning of the cloud by use of hyperplanes; the other (Cake Maker) explores expanding sequences of neighborhoods. Both procedures provide facilities for examining the resulting pieces and the relationships among them

  6. Copeptin, a surrogate marker for arginine vasopressin secretion, is associated with higher glucose and insulin concentrations but not higher blood pressure in obese men

    DEFF Research Database (Denmark)

    Asferg, C L; Andersen, Ulrik Bjørn; Linneberg, A

    2014-01-01

    distribution. METHODS: In 103 obese men (mean age ± standard deviation: 49.4 ± 10.2 years) and 27 normal weight control men (mean age: 51.5 ± 8.4 years), taking no medication, we measured 24-h ambulatory blood pressure, fasting blood concentrations of copeptin, lipids, glucose and insulin, and determined body...... blood pressure (r = 0.11, P = 0.29), 24-h diastolic blood pressure (r = 0.11, P = 0.28), BMI (r = 0.09, P = 0.37), total body fatness percentage (r = 0.10, P = 0.33), android fat mass percentage (r = 0.04, P = 0.66) or serum triglyceride concentrations (r = 0.04; P = 0.68). In contrast, plasma copeptin......, and is associated with abnormalities in glucose and insulin metabolism, but not with higher blood pressure or an android fat distribution in obese men....

  7. Progress and challenges of engineering a biophysical CO2-concentrating mechanism into higher plants.

    Science.gov (United States)

    Rae, Benjamin D; Long, Benedict M; Förster, Britta; Nguyen, Nghiem D; Velanis, Christos N; Atkinson, Nicky; Hee, Wei Yih; Mukherjee, Bratati; Price, G Dean; McCormick, Alistair J

    2017-06-01

    Growth and productivity in important crop plants is limited by the inefficiencies of the C3 photosynthetic pathway. Introducing CO2-concentrating mechanisms (CCMs) into C3 plants could overcome these limitations and lead to increased yields. Many unicellular microautotrophs, such as cyanobacteria and green algae, possess highly efficient biophysical CCMs that increase CO2 concentrations around the primary carboxylase enzyme, Rubisco, to enhance CO2 assimilation rates. Algal and cyanobacterial CCMs utilize distinct molecular components, but share several functional commonalities. Here we outline the recent progress and current challenges of engineering biophysical CCMs into C3 plants. We review the predicted requirements for a functional biophysical CCM based on current knowledge of cyanobacterial and algal CCMs, the molecular engineering tools and research pipelines required to translate our theoretical knowledge into practice, and the current challenges to achieving these goals. © The Author 2017. Published by Oxford University Press on behalf of the Society for Experimental Biology. All rights reserved. For permissions, please email: journals.permissions@oup.com.

  8. Higher Leptin but Not Human Milk Macronutrient Concentration Distinguishes Normal-Weight from Obese Mothers at 1-Month Postpartum.

    Science.gov (United States)

    De Luca, Arnaud; Frasquet-Darrieux, Marine; Gaud, Marie-Agnès; Christin, Patricia; Boquien, Clair-Yves; Millet, Christine; Herviou, Manon; Darmaun, Dominique; Robins, Richard J; Ingrand, Pierre; Hankard, Régis

    2016-01-01

    Exclusively breastfed infants born to obese mothers have previously been shown to gain less weight by 1-month postpartum than infants of normal-weight mothers. Our hypothesis is that human milk composition and volume may differ between obese and normal-weight mothers. To compare human milk leptin, macronutrient concentration, and volume in obese and normal-weight mothers. Mother and infant characteristics were studied as secondary aims. This cross-sectional observational study compared 50 obese mothers matched for age, parity, ethnic origin, and educational level with 50 normal-weight mothers. Leptin, macronutrient human milk concentration, and milk volume were determined at 1 month in exclusively breastfed infants. Mother characteristics and infant growth were recorded. Human milk leptin concentration was higher in obese mothers than normal-weight mothers (4.8±2.7 vs. 2.5±1.5 ng.mL-1, pobese and normal-weight mothers in protein, lipid, carbohydrate content, and volume, nor in infant weight gain. Leptin concentration was higher in the milk of obese mothers than that of normal-weight mothers, but macronutrient concentration was not. It remains to be established whether the higher leptin content impacts on infant growth beyond the 1-month of the study period.

  9. Irritable bowel syndrome is concentrated in people with higher educations in Iran: an inequality analysis

    Science.gov (United States)

    2017-01-01

    OBJECTIVES Like any other health-related disorder, irritable bowel syndrome (IBS) has a differential distribution with respect to socioeconomic factors. This study aimed to estimate and decompose educational inequalities in the prevalence of IBS. METHODS Sampling was performed using a multi-stage random cluster sampling approach. The data of 1,850 residents of Kish Island aged 15 years or older were included, and the determinants of IBS were identified using a generalized estimating equation regression model. The concentration index of educational inequality in cases of IBS was estimated and decomposed as the specific inequality index. RESULTS The prevalence of IBS in this study was 21.57% (95% confidence interval [CI], 19.69 to 23.44%). The concentration index of IBS was 0.20 (95% CI, 0.14 to 0.26). A multivariable regression model revealed that age, sex, level of education, marital status, anxiety, and poor general health were significant determinants of IBS. In the decomposition analysis, level of education (89.91%), age (−11.99%), and marital status (9.11%) were the three main contributors to IBS inequality. Anxiety and poor general health were the next two contributors to IBS inequality, and were responsible for more than 12% of the total observed inequality. CONCLUSIONS The main contributors of IBS inequality were education level, age, and marital status. Given the high percentage of anxious individuals among highly educated, young, single, and divorced people, we can conclude that all contributors to IBS inequality may be partially influenced by psychological factors. Therefore, programs that promote the development of mental health to alleviate the abovementioned inequality in this population are highly warranted. PMID:28171714

  10. Higher concentrations of branched-chain amino acids in breast milk of obese mothers.

    Science.gov (United States)

    De Luca, Arnaud; Hankard, Régis; Alexandre-Gouabau, Marie-Cécile; Ferchaud-Roucher, Véronique; Darmaun, Dominique; Boquien, Clair-Yves

    2016-01-01

    Nutrition during fetal life and early childhood is thought to play a crucial role in the risk for developing metabolic syndrome and cardiovascular diseases in the future adult and branched-chain amino acids (BCAA) intake may play a role in the development of obesity. The aim of this study was to compare the breast milk amino acid profiles of obese and normal weight (control) breast-feeding mothers. Fifty obese and 50 control breast-feeding mothers were enrolled. Age and parity were similar in both groups. Breast milk samples were collected at the end of the first month of lactation. Free amino acid (FAA) concentrations in breast milk were determined by ultra-performance liquid chromatography tandem mass spectrometry. Comparisons between groups were performed using a two-tailed paired t test. We analyzed 45 breast milk samples from each group. Body mass index was 34.3 ± 3.9 kg/m(2) in the obese group and 21.6 ± 1.4 kg/m(2) in the control group (P milk of obese mothers (95.5 ± 38.2 μM versus 79.8 ± 30.9 μM; P = 0.037), as was tyrosine concentration (13.8 ± 7.1 μM versus 10.6 ± 5.2 μM; P = 0.016). The mature breast milk of obese mothers contained 20% more BCAA and 30% more tyrosine than breast milk of control mothers. Whether altered breast milk FAA profile affects metabolic risk in the breast-fed child remains to be explored. Copyright © 2016 Elsevier Inc. All rights reserved.

  11. Enhancement of encaged electron concentration by Sr(2+) doping and improvement of Gd(3+) emission through controlling encaged anions in conductive C12A7 phosphors.

    Science.gov (United States)

    Zhang, Meng; Liu, Yuxue; Zhu, Hancheng; Yan, Duanting; Yang, Jian; Zhang, Xinyang; Liu, Chunguang; Xu, Changshan

    2016-07-28

    Conductive C12A7:0.1%Gd(3+),y%Sr(2+) powders with different Sr(2+) doping concentrations have been prepared in a H2 atmosphere by a solid state method in combination with subsequent UV-irradiation. The encaged electron concentration could be modulated through tuning Sr(2+) doping and its maximum value reaches 2.3 × 10(19) cm(-3). This is attributed to the competition between enhanced uptake and the release of the encaged anions during their formation and diffusion processes and the suppression of encaged electrons generation due to the increased encaged OH(-) anions and the decreased encaged O(2-) anions. Although there exists encaged electrons and different encaged anions (O(2-), H(-) and OH(-)) in C12A7 conductive powders prepared through the hydrogen route, a dominant local environment around Gd(3+) could be observed using electron spin resonance (ESR) detection. It can be ascribed to the stronger coupling of the encaged OH(-) to the framework of C12A7 than those of the encaged electrons, O(2-) and H(-) anions. In addition, emission of Gd(3+) ions is enhanced under UV or low voltage electron beam excitation and a new local environment around Gd(3+) ions appears through the thermal annealing in air because of the decrease of the encaged OH(-) anions and the increase of the encaged O(2-) anions. Our results suggested that Sr(2+) doping in combination with thermal annealing in air is an effective strategy for increasing the conductive performance and enhancing the emission of rare earth ions doped into C12A7 conductive phosphors for low-voltage field emission displays (FEDs).

  12. The Inflammatory Radicular Cysts Have Higher Concentration of TNF-α in Comparison to Odontogenic Keratocysts (Odontogenic Tumour

    Directory of Open Access Journals (Sweden)

    Vladimir Jurisic

    2007-01-01

    Full Text Available TNF-α is a pleiotropic cytokine that is considered as a primary modifier of inflammatory and immune reaction in response to various inflammatory diseases and tumour. We investigated levels of TNF-α in 43 radicular cysts and 15 odontogenic keratocysts, obtained from patients undergoing surgery, under local anaesthesia, and after aspiration of cystic fluid from non-ruptured cysts. TNF-α is elevated in both cysts’ fluid, but higher values were found in radicular cysts in comparison to keratocysts. The significantly higher concentration of TNF-α was associated with smaller radicular cysts, higher protein concentration, higher presence of inflammatory cells in peri cystic tissues, and the degree of vascularisation and cysts wall thickness (Mann-Whitney U-test, p<0.05. No correlation was found based on these parameters in odontogenic keratocyst, but all cysts have detectable concentrations of TNF-α. We here for the first time present that a difference in the concentration of TNF-α exists between these two cystic types.

  13. Concentrations of persistent organochlorine compounds in human milk and placenta are higher in Denmark than in Finland

    DEFF Research Database (Denmark)

    Shen, H.; Main, K.M.; Andersson, A.M.

    2008-01-01

    , oxychlordane (OXC), cis-heptachloroepoxide (c-HE) and 1,1,1-trichloro-2,2-bis(4-chlorophenyl)ethane (p,p'-DDT) were the other main organochlorines detected. Danish samples had significantly higher concentrations of p,p'-DDE, p,p'-DDT, beta-HCH, HCB, dieldrin, c-HE and OXC than did the Finnish samples. Levels...

  14. Higher Plasma Concentration of Food-Specific Antibodies in Persons with Autistic Disorder in Comparison to Their Siblings

    Science.gov (United States)

    Trajkovski, Vladimir; Petlichkovski, Aleksandar; Efinska-Mladenovska, Olivija; Trajkov, Dejan; Arsov, Todor; Strezova, Ana; Ajdinski, Ljubomir; Spiroski, Mirko

    2008-01-01

    Specific IgA, IgG, and IgE antibodies to food antigens in 35 participants with autistic disorder and 21 of their siblings in the Republic of Macedonia were examined. Statistically significant higher plasma concentration of IgA antibodies against alpha-lactalbumin, beta-lactoglobulin, casein, and gliadin were found in the children with autistic…

  15. High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

    Science.gov (United States)

    Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

    2018-05-01

    Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

  16. Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

    Science.gov (United States)

    Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

    2017-11-01

    Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

  17. Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

    Directory of Open Access Journals (Sweden)

    Abdul Halim N. Syafira

    2017-01-01

    Full Text Available Light emitting diode (LED employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW light emitting diode (LED is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED. Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW is also increases from 2.8V to 3.1V.

  18. The structural, electrical and optical properties of Mg-doped ZnO with different interstitial Mg concentration

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yonghong, E-mail: hchyh@njust.edu.cn [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Zeng, Haibo [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Du, Jifu [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Hu, Ziyu [Beijing Computational Science Research Center, Beijing 100084 (China); Zhang, Shengli [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)

    2016-10-01

    Through first principle calculations, we studied the structural, electronic and optical properties of ZnO doped by interstitial Mg. With the increase of Mg content (x), the derivations of lattice parameters from the wurtzite ZnO become more and more significant. The Mg-doped ZnO with x below 15.79% is found to be n-type semiconductor. The minimum of energy band gap and light transmittance in high energy region (7.5–25 eV) decrease while the conductivity and refractive index increase with increasing x. Further increasing x up to 20%, the Mg-doped ZnO is found to be direct-band-gap semiconductor with great structural derivation from wurtzite phase. The light transmittance increases while the refractive index decreases with the increase of x due to the change of geometry and electronic structure. So, it’s concluded that the electronic and optical properties of ZnO doped by interstitial Mg may be greatly influenced by Mg content. - Graphical abstract: The minimum of energy gap decreases while the corresponding relative number of electrons into the conduction bands increases when the interstitial Mg content x in Mg-doped ZnO increases (0 ≤ x ≤ 15.79%). - Highlights: • The energy band gap decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The conductivity increases with the increase of interstitial Mg content from 5.88% to 15.79%. • The Mg{sub x}Zn{sub 1-x}O (interstitial Mg content x= 20%) is found to be a direct-band-gap semiconductor. • The light transmittance decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The refractive index increases with the increase of interstitial Mg content from 5.88% to 15.79%.

  19. High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2–TiO2 library

    International Nuclear Information System (INIS)

    Chang, K.-S.; Lu, W.-C.; Wu, C.-Y.; Feng, H.-C.

    2014-01-01

    Highlights: • Amorphous N 2 -doped HfO 2 –TiO 2 libraries were fabricated using sputtering. • Structure and quality of the dielectric and interfacial layers were investigated. • κ (54), J L < 10 −6 A/cm 2 , and equivalent oxide thickness (1 nm) were identified. - Abstract: High-throughput sputtering was used to fabricate high-quality, amorphous, thin HfO 2 –TiO 2 and N 2 -doped HfO 2 –TiO 2 (HfON–TiON) gate dielectric libraries. Electron probe energy dispersive spectroscopy was used to investigate the structures, compositions, and qualities of the dielectric and interfacial layers of these libraries to determine their electrical properties. A κ value of approximately 54, a leakage current density <10 −6 A/cm 2 , and an equivalent oxide thickness of approximately 1 nm were identified in an HfON–TiON library within a composition range of 68–80 at.% Ti. This library exhibits promise for application in highly advanced metal–oxide–semiconductor (higher-κ) gate stacks

  20. Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

    International Nuclear Information System (INIS)

    Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

    2006-01-01

    We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

  1. Serum concentration of alpha-1 antitrypsin is significantly higher in colorectal cancer patients than in healthy controls

    International Nuclear Information System (INIS)

    Pérez-Holanda, Sergio; Blanco, Ignacio; Menéndez, Manuel; Rodrigo, Luis

    2014-01-01

    The association between alpha-1 antitrypsin (AAT) deficiency and colorectal cancer (CRC) is currently controversial. The present study compares AAT serum concentrations and gene frequencies between a group of CRC patients and a control group of healthy unrelated people (HUP). 267 CRC subjects (63% males, 72 ± 10 years old) were enlisted from a Hospital Clinic setting in Asturias, Spain. The HUP group comprised 327 subjects (67% males, mean age 70 ± 7.5 years old) from the same geographical region. Outcome measures were AAT serum concentrations measured by nephelometry, and AAT phenotyping characterization by isoelectric focusing. Significantly higher serum concentrations were found among CRC (208 ± 60) than in HUP individuals (144 ± 20.5) (p = 0.0001). No differences were found in the phenotypic distribution of the Pi*S and Pi*Z allelic frequencies (p = 0.639), although the frequency of Pi*Z was higher in CRC (21%) than in HUP subjects (15%). The only statistically significant finding in this study was the markedly higher AAT serum concentrations found in CRC subjects compared with HUP controls, irrespective of whether their Pi* phenotype was normal (Pi*MM) or deficient (Pi*MS, Pi*MZ and Pi*SZ). Although there was a trend towards the more deficient Pi* phenotype the more advanced the tumor, the results were inconclusive due to the small sample size. Consequently, more powerful studies are needed to reach firmer conclusions on this matter

  2. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    Science.gov (United States)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  3. Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

    KAUST Repository

    Hong, Seung Sae; Cha, Judy J.; Kong, Desheng; Cui, Yi

    2012-01-01

    A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

  4. Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

    KAUST Repository

    Hong, Seung Sae

    2012-03-27

    A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

  5. Multi-soliton and rogue-wave solutions of the higher-order Hirota system for an erbium-doped nonlinear fiber

    Energy Technology Data Exchange (ETDEWEB)

    Zuo, Da-Wei [Beijing University of Aeronautics and Astronautics, Beijing (China). State Key Laboratory of Software Development Environment; Ministry of Education, Beijing (China). Key Laboratory of Fluid Mechanics; Shijiazhuang Tiedao University (China). Dept. of Mathematics and Physics; Gao, Yi-Tian; Sun, Yu-Hao; Feng, Yu-Jie; Xue, Long [Beijing University of Aeronautics and Astronautics, Beijing (China). State Key Laboratory of Software Development Environment; Ministry of Education, Beijing (China). Key Laboratory of Fluid Mechanics

    2014-10-15

    The nonlinear Schroedinger (NLS) equation appears in fluid mechanics, plasma physics, etc., while the Hirota equation, a higher-order NLS equation, has been introduced. In this paper, a higher-order Hirota system is investigated, which describes the wave propagation in an erbium-doped nonlinear fiber with higher-order dispersion. By virtue of the Darboux transformation and generalized Darboux transformation, multi-soliton solutions and higher-order rogue-wave solutions are derived, beyond the published first-order consideration. Wave propagation and interaction are analyzed: (i) Bell-shape solitons, bright- and dark-rogue waves are found; (ii) the two-soliton interaction is elastic, i.e., the amplitude and velocity of each soliton remain unchanged after the interaction; (iii) the coefficient in the system affects the direction of the soliton propagation, patterns of the soliton interaction, distance, and direction of the first-order rogue-wave propagation, as well as the range and direction of the second-order rogue-wave interaction.

  6. Effect of light Si doping on the properties of GaN

    International Nuclear Information System (INIS)

    Shang, Lin; Zhai, Guangmei; Jia, Zhigang; Mei, Fuhong; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

    2016-01-01

    An obvious increase in electron mobility and yellow luminescence (YL) band intensity was found in light Si doping GaN. For a series of GaN samples with different doping concentration, the dislocation density is almost the same. It is inferred that the abrupt increase in mobility and YL intensity does not originate from the change of dislocation density. The mobility behavior is attributed to the screening of scattering by dislocation and increase of ionized impurity scattering with the increase of Si doping concentration. At lower doping level, the screening of dislocation scattering is dominant, which results in the increase in carrier mobility. At higher doping level, the increase in ionized impurity scattering leads to the decrease in carrier mobility. Higher mobility causes longer diffusion length of nonequilibrium carrier. More dislocations will participate in the recombination process which induces stronger YL intensity in light Si doping GaN.

  7. Effect of Cr doping on structural and magnetic properties of ZnS nanoparticles

    International Nuclear Information System (INIS)

    Virpal,; Singh, Jasvir; Sharma, Sandeep; Singh, Ravi Chand

    2016-01-01

    The structural, optical and magnetic properties of pure and Cr doped ZnS nanoparticles were studied at room temperature. X-ray diffraction analysis confirmed the absence of any mixed phase and the cubic structure of ZnS in pure and Cr doped ZnS nanoparticles. Fourier transfer infrared spectra confirmed the Zn-S stretching bond at 664 cm"−"1 of ZnS in all prepared nanoparticles. The UV-Visible absorption spectra showed blue shift which became even more pronounced in Cr doped ZnS nanoparticles. However, at relatively higher Cr concentrations a slower red shift was shown by the doped nanoparticles. This phenomenon is attributed to sp-d exchange interaction that becomes prevalent at higher doping concentrations. Further, magnetic hysteresis measurements showed that Cr doped ZnS nanoparticles exhibited ferromagnetic behavior at room temperature.

  8. Trace metal concentrations are higher in cartilage than in bones of scaup and pochard wintering in Poland

    International Nuclear Information System (INIS)

    Kalisinska, Elzbieta; Salicki, Wieslaw; Kavetska, Katarzyna M.; Ligocki, Marek

    2007-01-01

    Bones and cartilage of two species of diving ducks: the scaup Aythya marila (n = 24) and the pochard A. ferina (n = 24) were studied. Scaup is protected in Poland where it spends only the winter, while pochard is a game bird, abundant and breeding in Poland. In winter, the two species form large flocks off the southern coast of the Baltic, particularly in the Szczecin Lagoon where they were collected for this study. The bones and cartilage (trachea) were assayed for concentrations (dry weight-based) of three essential metals: iron (Fe), copper (Cu), and zinc (Zn); concentrations of the two toxic metals: lead (Pb) and cadmium (Cd) were assayed as well. These hard tissues of the two species showed the following order of metal concentrations Zn > Fe > Pb > Cu > Cd. In scaup and pochard bones, the respective geometric mean concentrations of Zn, Fe, Pb, Cu, and Cd were 94.4 and 102.0; 20.2 and 24.7; 6.2 and 9.6; 0.19 and 0.26; 0.114 and 0.162 mg/kg. The levels of all the metals in cartilage (Zn 149.1 and 165.8; Fe 58.4 and 116.3; Pb 10.6 and 14.9; Cu 1.41 and 3.31; Cd 0.144 and 0.175 mg/kg, respectively) were higher than in the bones of A. marila and A. ferina. However, statistically significant differences were found in respect to the essential metals only (Zn, Fe, Cu). The inter-species comparisons showed the two species to differ in their cartilage concentrations of Fe, Cu, Zn, and Cd and in their bone concentrations of Pb and Cd. In each case, the pochard exhibited higher concentrations of metals. This study showed distinct differences between trace element accumulation by two heavily mineralised avian body parts: leg bones (tarsometatarsus) and cartilage (trachea). The results are in agreement with data reported by other workers who analysed trace metals in cartilaginous and bone components of the femoral head in homoiotherm vertebrates, including humans. Therefore it is important that intra- and inter-species comparisons of hard biological components be based on

  9. Higher serum concentrations of vimentin and DAKP1 are associated with aggressive breast tumour phenotypes in Ghanaian women.

    Science.gov (United States)

    Arko-Boham, Benjamin; Lomotey, Justice Tanihu; Tetteh, Emmanuel Nomo; Tagoe, Emmanuel Ayitey; Aryee, Nii Ayite; Owusu, Ewurama Ampadu; Okai, Isaac; Blay, Richard Michael; Clegg-Lamptey, Joe-Nat

    2017-01-01

    Breast cancer, the most commonly diagnosed cancer among women and leading cause of cancer-related deaths worldwide, exhibits aggressive behavior in indigenous African women evidenced by high histologic grade tumours with low hormone receptor positivity. Aggressive breast cancers grow quickly, easily metastasize and recur and often have unfavourable outcomes. The current study investigated candidate genes that may regulate tumour aggression in Ghanaian women. We hypothesize that increased expression and function of certain genes other than the widely-held view attributing breast cancer aggression in African populations to their younger population age may be responsible for the aggressive nature of tumours. Employing ELISA, we assayed for vimentin and death-associated protein kinase 1 (DAPK1) from thawed archived (stored at -80 °C) serum samples obtained from 40 clinically confirmed Ghanaian breast cancer patients and 40 apparently healthy controls. Patients' clinical records and tumour parameters matching the samples were retrieved from the database of the hospital. ANOVA was used to compare means of serum protein concentration among groups while Chi-square analysis was used for the categorical data sets with p -value ≤0.05 considered significant. Multiple logistic regression analysis was conducted to determine the association between protein concentration and tumour parameters. Of the 80 samples, 27 (33.8%) and 53 (66.2%) were from young (<35 years) and old (≥35 years), respectively. Vimentin and DAPK1 concentration were higher in patients than controls with higher levels in "young" age group than "old" age group. Vimentin concentration was highest in grade 3 tumours followed by grade 2 and 1 but that for DAPK1 was not significant. For vimentin, tumour area strongly correlated with tumour grade ( r  = 0.696, p  < 0.05) but weakly correlated with tumour stage ( r  = 0.420, p  < 0.05). Patient's age correlated with DAPK1 concentration ( r  = 0

  10. The cubic-quintic-septic complex Ginzburg-Landau equation formulation of optical pulse propagation in 3D doped Kerr media with higher-order dispersions

    Science.gov (United States)

    Djoko, Martin; Kofane, T. C.

    2018-06-01

    We investigate the propagation characteristics and stabilization of generalized-Gaussian pulse in highly nonlinear homogeneous media with higher-order dispersion terms. The optical pulse propagation has been modeled by the higher-order (3+1)-dimensional cubic-quintic-septic complex Ginzburg-Landau [(3+1)D CQS-CGL] equation. We have used the variational method to find a set of differential equations characterizing the variation of the pulse parameters in fiber optic-links. The variational equations we obtained have been integrated numerically by the means of the fourth-order Runge-Kutta (RK4) method, which also allows us to investigate the evolution of the generalized-Gaussian beam and the pulse evolution along an optical doped fiber. Then, we have solved the original nonlinear (3+1)D CQS-CGL equation with the split-step Fourier method (SSFM), and compare the results with those obtained, using the variational approach. A good agreement between analytical and numerical methods is observed. The evolution of the generalized-Gaussian beam has shown oscillatory propagation, and bell-shaped dissipative optical bullets have been obtained under certain parameter values in both anomalous and normal chromatic dispersion regimes. Using the natural control parameter of the solution as it evolves, named the total energy Q, our numerical simulations reveal the existence of 3D stable vortex dissipative light bullets, 3D stable spatiotemporal optical soliton, stationary and pulsating optical bullets, depending on the used initial input condition (symmetric or elliptic).

  11. Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Feng Yujie; Lv Jiangwei; Liu Junfeng; Gao Na; Peng Hongyan; Chen Yuqiang

    2011-01-01

    A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH 4 /H 2 /B(OCH 3 ) 3 gas mixture. A maximum growth rate of 0.65 mg cm -2 h -1 was obtained with CH 4 /H 2 /B(OCH 3 ) 3 radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH 3 ) 3 that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 10 20 cm -3 with CH 4 /H 2 /B(OCH 3 ) 3 ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/190/10 possessed the best phenol removal efficiency.

  12. Porous allograft bone scaffolds: doping with strontium.

    Directory of Open Access Journals (Sweden)

    Yantao Zhao

    Full Text Available Strontium (Sr can promote the process of bone formation. To improve bioactivity, porous allograft bone scaffolds (ABS were doped with Sr and the mechanical strength and bioactivity of the scaffolds were evaluated. Sr-doped ABS were prepared using the ion exchange method. The density and distribution of Sr in bone scaffolds were investigated by inductively coupled plasma optical emission spectrometry (ICP-OES, X-ray photoelectron spectroscopy (XPS, and energy-dispersive X-ray spectroscopy (EDS. Controlled release of strontium ions was measured and mechanical strength was evaluated by a compressive strength test. The bioactivity of Sr-doped ABS was investigated by a simulated body fluid (SBF assay, cytotoxicity testing, and an in vivo implantation experiment. The Sr molar concentration [Sr/(Sr+Ca] in ABS surpassed 5% and Sr was distributed nearly evenly. XPS analyses suggest that Sr combined with oxygen and carbonate radicals. Released Sr ions were detected in the immersion solution at higher concentration than calcium ions until day 30. The compressive strength of the Sr-doped ABS did not change significantly. The bioactivity of Sr-doped material, as measured by the in vitro SBF immersion method, was superior to that of the Sr-free freeze-dried bone and the Sr-doped material did not show cytotoxicity compared with Sr-free culture medium. The rate of bone mineral deposition for Sr-doped ABS was faster than that of the control at 4 weeks (3.28 ± 0.23 µm/day vs. 2.60 ± 0.20 µm/day; p<0.05. Sr can be evenly doped into porous ABS at relevant concentrations to create highly active bone substitutes.

  13. Synthesis and thermoluminescence behavior of ZrO2:Eu3+ with variable concentration of Eu3+ doped phosphor

    Directory of Open Access Journals (Sweden)

    Raunak Kumar Tamrakar

    2014-10-01

    Full Text Available Cubical ZrO2 phosphor doped with the europium synthesized by conventional solid state synthesis method. The prepared phosphor was characterized by X-ray diffraction (XRD technique, field emission gun scanning electron microscopy (FEGSEM and transmission electron microscopy (TEM. In this paper, we focused on the thermoluminescence glow curves and kinetic parameters, activation energy, order of kinetics, and the frequency factor of ZrO2:Eu3+ phosphor under different doses of UV irradiations at a heating rate of 6.7 °C/s. The kinetic parameters activation energy E, the order of kinetics b, and the frequency factor s of synthesized phosphor of ZrO2:Eu3+ have been calculated by using a peak shape method.

  14. [Effect of high magnesium ion concentration on the electron transport rate and proton exchange in thylakoid membranes in higher plants].

    Science.gov (United States)

    Ignat'ev, A R; Khorobrykh, S A; Ivanov, B N

    2001-01-01

    The effects of magnesium ion concentration on the rate of electron transport in isolated pea thylakoids were investigated in the pH range from 4.0 up to 8.0. In the absence of magnesium ions in the medium and in the presence of 5 mM MgCl2 in the experiments not only without added artificial acceptors but also with ferricyanide or methylviologen as an acceptor, this rate had a well-expressed maximum at pH 5.0. It was shown that, after depression to minimal values at pH 5.5-6.5, it gradually rose with increasing pH. An increase in magnesium ion concentration up to 20 mM essentially affected the electron transfer rate: it decreased somewhat at pH 4.0-5.0 but increased at higher pH values. At this magnesium ion concentration, the maximum rate was at pH 6.0-6.5 and the minimum, at pH 7.0. Subsequent rise upon increasing pH to 8.0 was expressed more sharply. The influence of high magnesium ion concentration on the rate of electron transport was not observed in the presence of gramicidin D. It was found that without uncoupler, the changes in the electron transfer rate under the influence of magnesium ions correlated to the changes in the first-order rate constant of the proton efflux from thylakoids. It is supposed that the change in the ability of thylakoids to keep protons by the action of magnesium ions is the result of electrostatic interactions of these ions with the charges on the external surface of membranes. A possible role of regulation of the electron transport rate by magnesium ions in vivo is discussed.

  15. Doping dependent room-temperature ferromagnetism and structural properties of dilute magnetic semiconductor ZnO:Cu2+ nanorods

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    Copper doped ZnO nanoparticles were synthesized by the chemical technique based on the hydrothermal method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) for different doping percentages of Cu 2+ (1-10%). TEM/SEM images showed formation of uniform nanorods, the aspect ratio of which varied with doping percentage of Cu 2+ . The wurtzite structure of ZnO gradually degrades with the increasing Cu 2+ doping concentration and an additional CuO associated diffraction peak was observed above 8% of Cu 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Cu 2+ doping concentrations was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong room-temperature ferromagnetic behavior, however at higher doping percentage of copper the ferromagnetic behavior was suppressed and paramagnetic nature was enhanced.

  16. Dependence of upconversion emission intensity on Yb3+ concentration in Er3+/Yb3+ co-doped flake shaped Y2(MoO4)3 phosphors

    International Nuclear Information System (INIS)

    Lu Weili; Cheng Lihong; Zhong Haiyang; Sun Jiashi; Wan Jing; Tian Yue; Chen Baojiu

    2010-01-01

    Yttrium molybdate phosphors with fixed Er 3+ and various Yb 3+ concentrations were synthesized via a co-precipitation method. The crystal structure and the morphology of the phosphor were characterized by means of x-ray diffraction and field-emission scanning electron microscopy. Under 980 nm excitation, red and green upconversion emissions centred at 660, 553 and 530 nm were observed. Quantitative analyses on the dependence of upconversion emission intensity on the working current of a laser diode (LD) indicated that two-photon processes are responsible for both red and green upconversion emissions in both cases of low and high Yb 3+ concentrations. The relationship between the emission intensity ratio of 2 H 11/2 → 4 I 15/2 to 4 S 3/2 → 4 I 15/2 and the working current of the LD was studied for the samples doped with low and high Yb 3+ concentrations. Finally, a set of rate equations was established based on the possible upconversion mechanism, and an empirical formula was proposed to describe the Yb 3+ concentration dependence of upconversion emission intensity; the empirical formula fits well with the experimental data.

  17. Cobalt doped proangiogenic hydroxyapatite for bone tissue engineering application.

    Science.gov (United States)

    Kulanthaivel, Senthilguru; Roy, Bibhas; Agarwal, Tarun; Giri, Supratim; Pramanik, Krishna; Pal, Kunal; Ray, Sirsendu S; Maiti, Tapas K; Banerjee, Indranil

    2016-01-01

    The present study delineates the synthesis and characterization of cobalt doped proangiogenic-osteogenic hydroxyapatite. Hydroxyapatite samples, doped with varying concentrations of bivalent cobalt (Co(2+)) were prepared by the ammoniacal precipitation method and the extent of doping was measured by ICP-OES. The crystalline structure of the doped hydroxyapatite samples was confirmed by XRD and FTIR studies. Analysis pertaining to the effect of doped hydroxyapatite on cell cycle progression and proliferation of MG-63 cells revealed that the doping of cobalt supported the cell viability and proliferation up to a threshold limit. Furthermore, such level of doping also induced differentiation of the bone cells, which was evident from the higher expression of differentiation markers (Runx2 and Osterix) and better nodule formation (SEM study). Western blot analysis in conjugation with ELISA study confirmed that the doped HAp samples significantly increased the expression of HIF-1α and VEGF in MG-63 cells. The analysis described here confirms the proangiogenic-osteogenic properties of the cobalt doped hydroxyapatite and indicates its potential application in bone tissue engineering. Copyright © 2015 Elsevier B.V. All rights reserved.

  18. Solitons and rogue waves for a higher-order nonlinear Schroedinger-Maxwell-Bloch system in an erbium-doped fiber

    International Nuclear Information System (INIS)

    Su, Chuan-Qi; Gao, Yi-Tian; Yu, Xin; Xue, Long; Aviation Univ. of Air Force, Liaoning

    2015-01-01

    Under investigation in this article is a higher-order nonlinear Schroedinger-Maxwell-Bloch (HNLS-MB) system for the optical pulse propagation in an erbium-doped fiber. Lax pair, Darboux transformation (DT), and generalised DT for the HNLS-MB system are constructed. Soliton solutions and rogue wave solutions are derived based on the DT and generalised DT, respectively. Properties of the solitons and rogue waves are graphically presented. The third-order dispersion parameter, fourth-order dispersion parameter, and frequency detuning all influence the characteristic lines and velocities of the solitons. The frequency detuning also affects the amplitudes of solitons. The separating function has no effect on the properties of the first-order rogue waves, except for the locations where the first-order rogue waves appear. The third-order dispersion parameter affects the propagation directions and shapes of the rogue waves. The frequency detuning influences the rogue-wave types of the module for the measure of polarization of resonant medium and the extant population inversion. The fourth-order dispersion parameter impacts the rogue-wave interaction range and also has an effect on the rogue-wave type of the extant population inversion. The value of separating function affects the spatial-temporal separation of constituting elementary rogue waves for the second-order and third-order rogue waves. The second-order and third-order rogue waves can exhibit the triangular and pentagon patterns under different choices of separating functions.

  19. Spectral properties and laser performances of Yb3+:LaCa4O(BO3)3 crystal with high concentration doping

    International Nuclear Information System (INIS)

    Ji, Yuexia; Cao, Jiafeng; Xu, Jinlong; You, Zhenyu; Zhu, Zhaojie; Li, Jianfu; Wang, Yan; Tu, Chaoyang

    2013-01-01

    Highlights: •Yb 3+ :LaCa 4 O(BO 3 ) 3 single crystal was grown with high concentration doping. •Laser potentiality was evaluated based on the spectral and laser parameters. •Continuous wave laser operation was realized. •An output power of 0.77 W and a slope efficiency of 15.71% at 1077 nm were obtained. •The spectra and laser properties of Yb 3+ :LaCa 4 O(BO 3 ) 3 crystal were firstly reported. -- Abstract: High concentration of 15 at.% Yb 3+ doped LaCa 4 O(BO 3 ) 3 (LaCOB) crystal was grown by Czochralski technique. The absorption cross section was conclulated to be 0.63 × 10 −20 cm 2 at 977 nm and the emission cross section to be 0.39 × 10 −20 cm 2 at 1030 nm, with the FWHM of 6.15 and 33 nm respectively. Laser potentiality was evaluated based on the gain cross section σ g , the minimum inversion fraction β min and the minimum pump intensity I min , which were calculated to be 0.18 × 10 −20 cm 2 , 0.05 and 0.47 kw/cm 2 , respectively. Continuous wave laser operation was realized with an output power of 0.77 W and a slope efficiency of 15.71%. The laser emitted around 1077 nm. The radiation trapping and continuous pump mode are contributed to the lasing wavelength for present crystal

  20. Higher Anti-CMV IgG Concentrations are Associated with Worse Neurocognitive Performance During Suppressive Antiretroviral Therapy.

    Science.gov (United States)

    Letendre, Scott; Bharti, Ajay; Perez-Valero, Ignacio; Hanson, Barbara; Franklin, Donald; Woods, Steven Paul; Gianella, Sara; de Oliveira, Michelli Faria; Heaton, Robert K; Grant, Igor; Landay, Alan L; Lurain, Nell

    2018-03-01

    To determine the association of CMV infection with neurocognitive performance in HIV+ adults. Cross-sectional, observational, exploratory study. Anti-CMV IgG concentrations in blood and CMV DNA copies in blood and cerebrospinal fluid (CSF) were measured in stored specimens of 80 HIV+ adults who were previously assessed with a standardized, comprehensive neurocognitive test battery. Thirty-eight were taking suppressive antiretroviral therapy (ART, HIV RNA ≤ 50 copies/mL) and 42 were not taking ART. A panel of 7 soluble biomarkers were also measured by immunoassay in CSF. Anti-CMV IgG concentrations ranged from 5.2 to 46.1 U/mL. CMV DNA was detected in 7 (8.8%) blood plasma but in none of the CSF specimens. Higher anti-CMV IgG levels were associated with older age (p=0.0017), lower nadir CD4+ T-cell count (pperformance overall (p=0.059). This correlation was present in those taking suppressive ART (p=0.0049) but not in those who were not taking ART (p=0.92). Worse neurocognitive performance remained associated with higher anti-CMV IgG levels after accounting for other covariates in multivariate models (Model p=0.0038). Detectable plasma CMV DNA was associated with AIDS (p=0.05) but not with neurocognitive performance. CMV may influence neurocognitive performance in HIV+ adults taking suppressive ART. Future clinical trials of anti-CMV therapy should help determine whether the observed relationships are causal.

  1. Optical and scintillation properties of Ce-doped LuLiF{sub 4} with different Ce concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Yanagida, Takayuki, E-mail: yanagida@lsse.kyutech.ac.jp [Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu, Fukuoka 808-0196 (Japan); Fujimoto, Yutaka [Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu, Fukuoka 808-0196 (Japan); Fukuda, Kentaro [Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 Japan (Japan); Chani, Valery [Tohoku Univ., 2-1-1 Katahira, Sendai 980-8577 (Japan)

    2013-11-21

    The crystals of 0.1, 0.5, and 1 mol% Ce-doped LuLiF{sub 4} (Ce:LLF) grown by the micro-pulling down (μ-PD) method were examined for their optical and scintillation properties. Ce:LLF crystals had ∼80% transparency at wavelengths longer than 300 nm. In photoluminescence spectra, they demonstrated intense emission peaks at 310 and 330 nm with the quantum yield of 60–90%. Ce{sup 3+} 5d–4f emission peaks were also detected at similar wavelengths of 310 and 330 nm in the radioluminescence spectra obtained under X-ray excitation. According to pulse height spectra recorded under γ-ray irradiation, the absolute light yield of Ce 0.1, 0.5, and 1% were 3600±400, 3000±300, and 1700±200 ph/MeV, respectively. Decay time kinetics was also inspected using a pulse X-ray equipped streak camera system. The decay time components of Ce:LLF were ∼70 ns and ∼1 μs for all the samples.

  2. Optical and scintillation properties of Ce-doped LuLiF4 with different Ce concentrations

    International Nuclear Information System (INIS)

    Yanagida, Takayuki; Fujimoto, Yutaka; Fukuda, Kentaro; Chani, Valery

    2013-01-01

    The crystals of 0.1, 0.5, and 1 mol% Ce-doped LuLiF 4 (Ce:LLF) grown by the micro-pulling down (μ-PD) method were examined for their optical and scintillation properties. Ce:LLF crystals had ∼80% transparency at wavelengths longer than 300 nm. In photoluminescence spectra, they demonstrated intense emission peaks at 310 and 330 nm with the quantum yield of 60–90%. Ce 3+ 5d–4f emission peaks were also detected at similar wavelengths of 310 and 330 nm in the radioluminescence spectra obtained under X-ray excitation. According to pulse height spectra recorded under γ-ray irradiation, the absolute light yield of Ce 0.1, 0.5, and 1% were 3600±400, 3000±300, and 1700±200 ph/MeV, respectively. Decay time kinetics was also inspected using a pulse X-ray equipped streak camera system. The decay time components of Ce:LLF were ∼70 ns and ∼1 μs for all the samples

  3. Cobalt doped proangiogenic hydroxyapatite for bone tissue engineering application

    Energy Technology Data Exchange (ETDEWEB)

    Kulanthaivel, Senthilguru [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India); Roy, Bibhas [Department of Biotechnology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Agarwal, Tarun [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India); Giri, Supratim [Department of Chemistry, National Institute of Technology, Rourkela, Odisha 769008 (India); Pramanik, Krishna; Pal, Kunal; Ray, Sirsendu S. [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India); Maiti, Tapas K. [Department of Biotechnology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Banerjee, Indranil, E-mail: indraniliit@gmail.com [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India)

    2016-01-01

    ABSTRACT: The present study delineates the synthesis and characterization of cobalt doped proangiogenic–osteogenic hydroxyapatite. Hydroxyapatite samples, doped with varying concentrations of bivalent cobalt (Co{sup 2+}) were prepared by the ammoniacal precipitation method and the extent of doping was measured by ICP–OES. The crystalline structure of the doped hydroxyapatite samples was confirmed by XRD and FTIR studies. Analysis pertaining to the effect of doped hydroxyapatite on cell cycle progression and proliferation of MG-63 cells revealed that the doping of cobalt supported the cell viability and proliferation up to a threshold limit. Furthermore, such level of doping also induced differentiation of the bone cells, which was evident from the higher expression of differentiation markers (Runx2 and Osterix) and better nodule formation (SEM study). Western blot analysis in conjugation with ELISA study confirmed that the doped HAp samples significantly increased the expression of HIF-1α and VEGF in MG-63 cells. The analysis described here confirms the proangiogenic–osteogenic properties of the cobalt doped hydroxyapatite and indicates its potential application in bone tissue engineering. - Highlights: • Cobalt (Co{sup +2}) doped hydroxyapatite (Co-HAp) can be prepared by the wet chemical method. • The concentration of Co{sup +2} influences the physico-chemical properties of HAp. • Co-HAp was found to be biocompatible and osteogenic. • Co-HAp enhanced cellular VEGF secretion through HIF-1α stabilization. • The optimum biological performance of Co-HAp was achieved for 0.33% (w/w) Co{sup +2} doping.

  4. Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo

    1995-01-01

    Structural characteristics and electrooptical properties of Sn-doped In 2 O 3 (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO 2 wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author)

  5. Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo [Tokyo Univ. (Japan). Inst. of Industrial Science

    1995-02-01

    Structural characteristics and electrooptical properties of Sn-doped In{sub 2}O{sub 3} (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO{sub 2} wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author).

  6. The influence of exercise and dehydration on the urine concentrations of salbutamol after inhaled administration of 1600 µg salbutamol as a single dose in relation to doping analysis

    DEFF Research Database (Denmark)

    Haase, Christoffer Bjerre; Backer, Vibeke; Kalsen, Anders

    2016-01-01

    The present study investigated the influence of exercise and dehydration on the urine concentrations of salbutamol after inhalation of that maximal permitted (1600 µg) on the 2015 World Anti-Doping Agency (WADA) prohibited list. Thirteen healthy males participated in the study. Urine concentrations...... of salbutamol were measured during three conditions: exercise (EX), exercise+dehydration (EXD), and rest (R). Exercise consisted of 75 min cycling at 60% of VO2max and a 20-km time-trial. Fluid intake was 2300, 270, and 1100 mL during EX, EXD, and R, respectively. Urine samples of salbutamol were collected 0.......0±0.7 ng/mL) than EX(3.8±0.8 ng/mL) and EXD(3.6±0.8 ng/mL). AUC was lower for R (14.1±2.8 ng/mL·∙h) than EX (16.9±2.9 ng/mL·∙h)(Pdehydration affect urine concentrations of salbutamol and increase the risk of Adverse Analytical Findings...

  7. Influence of Tm+3 concentration on the non-linear optical effects of the BiB3O6 : Tm3+ glass nanoparticle-doped polymer

    International Nuclear Information System (INIS)

    Majchrowski, A; Ebothe, J; Ozga, K; Kityk, I V; Reshak, A H; Lukasiewicz, T; Brik, M G

    2010-01-01

    It is shown that BiB 3 O 6 : Tm 3+ glass nanoparticles incorporated into polymethylmethacrylate (PMMA) and polycarbonate (PC) polymer matrices show good second-order susceptibilities under bicolour coherent laser treatment. It is found that only during incorporation into highly polarized PC matrices could one observe an enhancement of the second-order susceptibilities with increasing laser treated power densities. The main increase is observed for all samples at power densities equal to about 0.4 GW cm -2 . After passing this value there is a saturation of the output susceptibilities and even an abrupt decrease. The most striking feature is the achievement of second-order susceptibilities equal to about 5 pm V -1 for samples containing 4% nanoparticle (NP) content in the PC matrix. A further increase in the NP concentration to 6% leads to a decrease in susceptibility to 15%. In the case of PMMA matrices these changes do not exceed the background. The same situation is present for the pure BIBO and low-doped Tm materials. The effect is maximal for a low concentration of Tm-about 0.75%. In the case of bulk glasses the intensity dependences of the second-harmonic generation unambiguously show that the achieved maximal values of second-order susceptibilities do not exceed 3 pm V -1 for 0.5% Tm concentration.

  8. Effects of concentration of reduced graphene oxide on properties of sol–gel prepared Al-doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Ching-Tian; Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Chen, Wei-Chun

    2016-04-30

    Reduced-graphene-oxide-incorporated aluminum-doped zinc oxide (AZO:rGO) composite thin films were synthesized on glass substrates by using the sol–gel method. The effect of the rGO concentration (0–3 wt%) on structural, electrical, and optical properties of the composite film was investigated by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, and ultraviolet–visible spectrometry. All of the composite films showed a typical hexagonal wurtzite structure, and the films incorporated with 1 wt% rGO showed the highest (0 0 2) peak intensity. The sheet resistance of the films was effectively reduced by a factor of more than two as the rGO ratio increased from 0 to 1 wt%. However, the sheet resistance increased with a further increase in the rGO ratio. The optical transmittance of the composite film monotonically decreased with increasing the rGO ratio from 0 to 3 wt%. The average optical transmittance (400–700 nm) of the AZO:rGO thin film within 1 wt% rGO was above 81%. - Highlights: • Reduced-graphene-oxide-doped ZnO:Al composite films are synthesized by sol–gel. • All AZO:rGO thin films show a typical hexagonal wurtzite structure. • Sheet resistance of AZO:rGO(1 wt%) film decreases by a factor of more than two. • The average visible transmittance of the AZO:rGO(1 wt%) film was 81%.

  9. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    Science.gov (United States)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  10. EPR study of concentration dependence in Ce, Ce : La and Ce:Y doped SrF2

    NARCIS (Netherlands)

    Dankert, O.; Vainchtein, David; Datema, H.C.; den Hartog, Hendrik

    1995-01-01

    Experimental results of an EPR-study of the concentration dependence of the doubly integrated intensity and linewidth of the signals associated with tetragonal Ce3+-F--dipoles in Sr1-xCexF2+x, Sr-1-0.005-x Ce0.005LaxF2+0.005+x and Sr-1-0.005-x Ce0.005YxF2+0.005+x are presented. Both show a nonlinear

  11. Remote Molecular Doping of Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Kirmani, Ahmad R.

    2016-10-07

    In recent years colloidal quantum dot (CQD) photovoltaics have developed rapidly because of novel device architectures and robust surface passivation schemes. Achieving controlled net doping remains an important unsolved challenge for this field. Herein we present a general molecular doping platform for CQD solids employing a library of metal–organic complexes. Low effective ionization energy and high electron affinity complexes are shown to produce n- and p-doped CQD solids. We demonstrate the obvious advantage in solar cells by p-doping the CQD absorber layer. Employing photoemission spectroscopy, we identify two doping concentration regimes: lower concentrations lead to efficient doping, while higher concentrations also cause large surface dipoles creating energy barriers to carrier flow. Utilizing the lower concentration regime, we remove midgap electrons leading to 25% enhancement in the power conversion efficiency relative to undoped cells. Given the vast number of available metal–organic complexes, this approach opens new and facile routes to tuning the properties of CQDs for various applications without necessarily resorting to new ligand chemistries.

  12. Remote Molecular Doping of Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Kirmani, Ahmad R.; Kiani, Amirreza; Said, Marcel M.; Voznyy, Oleksandr; Wehbe, Nimer; Walters, Grant; Barlow, Stephen; Sargent, Edward H.; Marder, Seth R.; Amassian, Aram

    2016-01-01

    In recent years colloidal quantum dot (CQD) photovoltaics have developed rapidly because of novel device architectures and robust surface passivation schemes. Achieving controlled net doping remains an important unsolved challenge for this field. Herein we present a general molecular doping platform for CQD solids employing a library of metal–organic complexes. Low effective ionization energy and high electron affinity complexes are shown to produce n- and p-doped CQD solids. We demonstrate the obvious advantage in solar cells by p-doping the CQD absorber layer. Employing photoemission spectroscopy, we identify two doping concentration regimes: lower concentrations lead to efficient doping, while higher concentrations also cause large surface dipoles creating energy barriers to carrier flow. Utilizing the lower concentration regime, we remove midgap electrons leading to 25% enhancement in the power conversion efficiency relative to undoped cells. Given the vast number of available metal–organic complexes, this approach opens new and facile routes to tuning the properties of CQDs for various applications without necessarily resorting to new ligand chemistries.

  13. Effect of pressure and doping on lattice structure of zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zolfaghari, Mahmoud, E-mail: mzolfaghari@phys.usb.ac.ir

    2017-01-15

    The semiconductor ZnO belongs to the IIb-VI binary compound. It has a high exciton binding energy of 60 meV. The bonding in these materials is covalent with some ionic character. Induced changes on the physical properties of Mn doped ZnO samples due to different dopant concentrations and pressure were evaluated. The results obtained showed higher solubility limit for Mn doped ZnO due to pressure. The trend of XRD results for higher Mn concentration (9 at%) as pressure increases, was towards doping improvement. The XRD, SEM and UV–vis study of the samples also revealed that there were variations in the lattice parameters, nanoparticle size and bandgap energy of the doped and pressurized doped samples. Further, the directions of variation of bandgap energy values and calculated particle size, as well as SEM values of the doped samples due to pressure variation were found to be the same i.e. all of them together either increase or decrease as pressure varies. However, these variations were found to be opposite to that of lattice constants (all a and most c values) variation for both Mn dopant concentrations (3 at% and 9 at%). These physical variations of unpressurized doped samples can be attributed to the change in the polar bonding of the elemental constitutions in the lattice. While for the pressurized doped samples, the variations attributed to repulsion of lone pairs as well as change in the electronegativity of the system.

  14. High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

    2018-05-08

    Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

  15. Structural and dielectric studies on Ag doped nano ZnSnO3

    Science.gov (United States)

    Deepa, K.; Angel, S. Lilly; Rajamanickam, N.; Jayakumar, K.; Ramachandran, K.

    2018-04-01

    Undoped and Ag-doped nano Zinc Stannate (ZSO) ternary oxide were prepared by co-precipitation method. The crystallographic, morphological and optical properties of the synthesized nanoparticles were studied using X-ray diffraction (XRD) and UV-Visible spectroscopy (UV-Vis) and Scanning electron microscopy (SEM). The electrical properties of the synthesized samples were studied by dielectric measurements. Higher concentration Ag doped ZSO nanoparticles exhibit higher dielectric constant at low frequency.

  16. Investigation of structural, electronic and anisotropic elastic properties of Ru-doped WB{sub 2} compound by increased valence electron concentration

    Energy Technology Data Exchange (ETDEWEB)

    Surucu, Gokhan, E-mail: g_surucu@yahoo.com [Ahi Evran University, Department of Electric and Energy, 40100, Kirsehir (Turkey); Gazi University, Photonics Application and Research Center, 06500, Ankara (Turkey); Kaderoglu, Cagil [Ankara University, Department of Engineering Physics, 06100, Ankara (Turkey); Deligoz, Engin; Ozisik, Haci [Aksaray University, Department of Physics, 68100, Aksaray (Turkey)

    2017-03-01

    First principles density functional theory (DFT) calculations have been used to investigate the structural, anisotropic elastic and electronic properties of ruthenium doped tungsten-diboride ternary compounds (W{sub 1−x}Ru{sub x}B{sub 2}) for an increasing molar fraction of Ru atom from 0.1 to 0.9 by 0.1. Among the nine different compositions, W{sub 0.3}Ru{sub 0.7}B{sub 2} has been found as the most stable one due to the formation energy and band filling theory calculations. Moreover, the band structures and partial density of states (PDOS) have been computed for each x composition. After obtaining the elastic constants for all x compositions, the secondary results such as Bulk modulus, Young’s modulus, Poisson’s ratio, Shear modulus, and Vickers Hardness of polycrystalline aggregates have been derived and the relevant mechanical properties have been discussed. In addition, the elastic anisotropy has been visualized in detail by plotting the directional dependence of compressibility, Poisson ratio, Young’s and Shear moduli. - Highlights: • Effects of Ru substitution in WB{sub 2} using increased valence electron concentration. • Structural, electronic, mechanic and elastic properties for increasing Ru content. • Considered alloys are incompressible, brittle, stiffer and high hard materials.

  17. Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Djessas, K. [Université de Perpignan Via Domitia (UPVD), Laboratoire Procédés, Matériaux et Energie Solaire (PROMES—CNRS), TECNOSUD, Rambla de la thermodynamique, 66100 Perpignan (France); Bouchama, I., E-mail: bouchama.idris@yahoo.fr [Université de Perpignan Via Domitia (UPVD), Laboratoire Procédés, Matériaux et Energie Solaire (PROMES—CNRS), TECNOSUD, Rambla de la thermodynamique, 66100 Perpignan (France); Département d' Electronique, Faculté de Technologie, Université de Msila, 28000 (Algeria); Gauffier, J.L. [Département de Physique, INSA de Toulouse, 135 Avenue de Rangueil, 31077 Toulouse Cedex 4 (France); Ayadi, Z. Ben [Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l' Environnement (LaPhyMNE), Université de Gabès, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig, 6072 Gabès (Tunisia)

    2014-03-31

    In the present paper, high-quality In-doped ZnO (ZnO:In) thin films have been prepared by rf-magnetron sputtering on glass and p-type monocrystalline silicon substrates from an aerogel nanopowder target material. The nanoparticles with the [In]/[Zn] ratio varying between 0.01 and 0.05 were synthesized by the sol–gel method and the structural properties have been analyzed. The effect of different dopant concentrations on the electrical, optical, structural and morphological properties of the films has been investigated. The obtained ZnO:In films at room temperature are polycrystalline with a hexagonal structure and a highly preferred orientation with the c-axis perpendicular to the substrate. Scanning electron microscopy and atomic force microscopy have been applied for a morphology characterization of the films' cross-section and surface. The results revealed a typical columnar structure and very smooth surface. Films with good optical transmittance, around 85%, within the visible wavelength region, and low resistivity in the range of 10{sup −3} Ω·cm and high mobility of 4 cm{sup 2}/Vs, were produced at low substrate temperature. On the other hand, we have studied the position of the p–n junction involved in an Au/In{sub 2}O{sub 3}:SnO{sub 2}/ZnO:In(n)/c-Si(p)/Al structure by electron beam induced current. Current density–voltage characterizations in the dark and under illumination were also performed. The cell exhibits an efficiency of 6%. - Highlights: • ZnO:In thin films were prepared by rf-magnetron sputtering. • No significant changes were observed in the ZnO:In properties. • In-doped ZnO shows superior electric properties compared with pure ZnO. • Interesting photovoltaic effect observed in ITO/ZnO:In(n)/c-Si(p) heterostructure • Good quality of p–n junction in the ZnO:In(n)/c-Si(p) solar cell.

  18. Progress on erbium-doped waveguide components

    DEFF Research Database (Denmark)

    Bjarklev, Anders Overgaard; Berendt, Martin Ole; Broeng, Jes

    1997-01-01

    The recent development in erbium-doped fiber amplifiers, and fiber lasers is reviewed. Also the latest results on planar erbium-doped waveguide amplifiers and high erbium concentration characterisation methods are presented...

  19. Gaseous polycyclic aromatic hydrocarbon concentrations are higher in urban forests than adjacent open areas during summer but not in winter – Exploratory study

    International Nuclear Information System (INIS)

    Viippola, Viljami; Rantalainen, Anna-Lea; Yli-Pelkonen, Vesa; Tervo, Peatta; Setälä, Heikki

    2016-01-01

    While the potential of plants to uptake polycyclic aromatic hydrocarbons (PAHs) is widely acknowledged, empirical evidence of the effects of this process on local atmospheric PAH concentrations and human health is tenuous. We measured gaseous PAH concentrations using passive samplers in urban tree-covered areas and adjacent open, treeless areas in a near-road environment in Finland to gain information on the ability of urban vegetation to improve air quality. The ability of urban, mostly deciduous, vegetation to affect PAHs was season dependent: during summer, concentrations were significantly higher in tree-covered areas, while in the fall, concentrations in open areas exceeded those in tree-covered areas. During winter, concentrations in tree-covered areas were either lower or did not differ from those in open areas. Results of this study imply that the commonly believed notion that trees unequivocally improve air quality does not apply to PAHs studied here. - Highlights: • Urban tree-cover increases gaseous PAH concentrations during summertime. • Elevated PAH concentrations do not clearly correspond with vegetation properties. • Tree-cover attenuates seasonal PAH concentration fluctuation. - Higher ambient gaseous PAH concentrations were detected within urban tree cover as compared to open areas during summertime.

  20. Higher Serum 25-Hydroxyvitamin D Concentrations Associate with a Faster Recovery of Skeletal Muscle Strength after Muscular Injury

    Directory of Open Access Journals (Sweden)

    Lindell K. Weaver

    2013-04-01

    Full Text Available The primary purpose of this study was to identify if serum 25-hydroxyvitamin D (25(OHD concentrations predict muscular weakness after intense exercise. We hypothesized that pre-exercise serum 25(OHD concentrations inversely predict exercise-induced muscular weakness. Fourteen recreationally active adults participated in this study. Each subject had one leg randomly assigned as a control. The other leg performed an intense exercise protocol. Single-leg peak isometric force and blood 25(OHD, aspartate and alanine aminotransferases, albumin, interferon (IFN-γ, and interleukin-4 were measured prior to and following intense exercise. Following exercise, serum 25(OHD concentrations increased (p < 0.05 immediately, but within minutes, subsequently decreased (p < 0.05. Circulating albumin increases predicted (p < 0.005 serum 25(OHD increases, while IFN-γ increases predicted (p < 0.001 serum 25(OHD decreases. Muscular weakness persisted within the exercise leg (p < 0.05 and compared to the control leg (p < 0.05 after the exercise protocol. Serum 25(OHD concentrations inversely predicted (p < 0.05 muscular weakness (i.e., control leg vs. exercise leg peak isometric force immediately and days (i.e., 48-h and 72-h after exercise, suggesting the attenuation of exercise-induced muscular weakness with increasing serum 25(OHD prior to exercise. Based on these data, we conclude that pre-exercise serum 25(OHD concentrations could influence the recovery of skeletal muscle strength after an acute bout of intense exercise.

  1. Doping efficiency of single and randomly stacked bilayer graphene by iodine adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Kim, HoKwon; Renault, Olivier; Rouchon, Denis; Mariolle, Denis; Chevalier, Nicolas [Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tyurnina, Anastasia; Simonato, Jean-Pierre; Dijon, Jean [Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LITEN, Minatec Campus, F-38054 Grenoble (France)

    2014-07-07

    We report on the efficiency and thermal stability of p-doping by iodine on single and randomly stacked, weakly coupled bilayer polycrystalline graphene, as directly measured by photoelectron emission microscopy. The doping results in work function value increase of 0.4–0.5 eV, with a higher degree of iodine uptake by the bilayer (2%) as compared to the single layer (1%) suggesting iodine intercalation in the bilayer. The chemistry of iodine is identified accordingly as I{sub 3}{sup −} and I{sub 5}{sup −} poly iodide anionic complexes with slightly higher concentration of I{sub 5}{sup −} in bilayer than monolayer graphene, likely attributed to differences in doping mechanisms. Temperature dependent in-situ annealing of the doped films demonstrated that the doping remains efficient up to 200 °C.

  2. The effect of intentional potassium co-doping on the luminescent properties of Yb3+ and Tm3+ doped α-NaYF4 core and core–shell nanoparticles

    International Nuclear Information System (INIS)

    Misiak, Małgorzata; Stręk, Wiesław; Arabasz, Sebastian; Bednarkiewicz, Artur

    2016-01-01

    Simple and effective ways to circumvent limited luminescence efficiency of up-converting nanoparticles (UCNPs) are sought. One of the methods relays on distorting the crystallographic structure of host material by co-doping the nanocrystals with optically inactive co-dopants. Here we study the influence of K + doping and surface passivation on the up-converting properties of the α-NaYF 4 nanocrystals co-doped with 20% Yb 3+ and 0.1 or 2% Tm 3+ . The intentionally chosen concentrations of K + ions, which were meant to replaced sodium ions were fixed to 0, 5, 10, 20 to 30%. Potassium ions modified the spectroscopic properties of both core and core–shell NPs, but the differences were noticed between samples doped with 0.1% Tm 3+ and 2% Tm 3+ ions. Replacement of sodium by potassium ions decreased up-conversion luminescence intensity as well as shortened thulium excited states lifetimes in the samples doped with 0.1% Tm 3+ , while the opposite behavior was found in the samples co-doped with higher 2% thulium concentration. - Highlights: • We studied the influence of K + doping on luminescent properties of α-NaYF 4 :YbTm. • The 0.1 and 2% Tm doped core and core–shell samples were investigated. • K + -doping influence on UC properties was different in low and highly Tm doped NPs. • The explanations of the observed variations were proposed.

  3. A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

    Science.gov (United States)

    Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

    2018-05-01

    Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

  4. Biodegradation testing of chemicals with high Henry’s constants – separating mass and effective concentration reveals higher rate constants

    DEFF Research Database (Denmark)

    Birch, Heidi; Andersen, Henrik Rasmus; Comber, Mike

    Microextraction (HS-SPME) was applied directly on the test systems to measure substrate depletion by biodegradation relative to abiotic controls. HS-SPME was also applied to determine air to water partitioning ratios. Water phase biodegradation rate constants, kwater, were up to 72 times higher than test system...

  5. Higher blood harmane (1-methyl-9H-pyrido[3,4-b]indole) concentrations correlate with lower olfactory scores in essential tremor.

    Science.gov (United States)

    Louis, Elan D; Rios, Eileen; Pellegrino, Kathryn M; Jiang, Wendy; Factor-Litvak, Pam; Zheng, Wei

    2008-05-01

    Harmane (1-methyl-9H-pyrido[3,4-b]indole), a neurotoxin, may be an environmental risk factor for essential tremor (ET). Harmane and related chemicals are toxic to the cerebellum. Whether it is through this mechanism (cerebellar toxicity) that harmane leads to ET is unknown. Impaired olfaction may be a feature of cerebellar disease. To determine whether blood harmane concentrations correlate with olfactory test scores in patients with ET. Blood harmane concentrations were quantified using high performance liquid chromatography. Odor identification testing was performed with the University of Pennsylvania Smell Identification Test (UPSIT). In 83 ET cases, higher log blood harmane concentration was correlated with lower UPSIT score (rho=-0.46, p<0.001). 25/40 (62.5%) cases with high log blood harmane concentration (based on a median split) had low UPSIT scores (based on a median split) vs. 12/43 (27.9%) ET cases with low log blood harmane concentration (adjusted odd ratios (OR) 4.04, 95% confidence intervals (CI) 1.42-11.50, p=0.009). When compared with the low log blood harmane tertile, the odds of olfactory dysfunction were 2.64 times higher in cases in the middle tertile and 10.95 times higher in cases in the high tertile. In 69 control subjects, higher log blood harmane concentration was not correlated with lower UPSIT score (rho=0.12, p=0.32). Blood harmane concentrations were correlated with UPSIT scores in ET cases but not controls. These analyses set the stage for postmortem studies to further explore the role of harmane as a cerebellar toxin in ET.

  6. Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis

    International Nuclear Information System (INIS)

    Gokulakrishnan, V.; Parthiban, S.; Jeganathan, K.; Ramamurthi, K.

    2011-01-01

    Zirconium doped zinc oxide thin films with enhanced optical transparency were prepared on Corning 1737 glass substrates at the substrate temperature of 400 o C by spray pyrolysis method for various doping concentrations of zirconium (IV) chloride in the spray solution. The X-ray diffraction studies reveal that the films exhibit hexagonal crystal structure with polycrystalline grains oriented along (0 0 2) direction. The crystalline quality of the films is found to be deteriorating with the increase of doping concentration and acquires amorphous state for higher concentration of 8 at.% in precursor solution. The average transmittance for 5 at.% (solution) zirconium doped ZnO film is significantly increased to ∼92% in the visible region of 500-800 nm. The room temperature photoluminescence (PL) spectra of films show a band edge between 3.41 and 3.2 eV and strong blue emission at 2.8 eV irrespective of doping concentration and however intensity increases consistently with doping levels. The vacuum annealing at 400 o C reduced the resistivity of the films significantly due to the coalescence of grains and the lowest resistivity of 2 x 10 -3 Ω cm is observed for 3 at.% (solution) Zr doped ZnO films which envisages that it is a good candidate for stable TCO material.

  7. Facile synthesis of Sm-doped BiFeO{sub 3} nanoparticles for enhanced visible light photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Zijun; Chen, Da, E-mail: dchen_80@hotmail.com; Wang, Sen; Zhang, Ning; Qin, Laishun, E-mail: qinlaishun@cjlu.edu.cn; Huang, Yuexiang

    2017-06-15

    Highlights: • Effective Sm doping into BiFeO{sub 3} nanoparticles was obtained by a facile sol-gel route. • Band gap of Sm-doped BiFeO{sub 3} nanoparticles was regulated by the dopant concentration. • Sm-doped BiFeO{sub 3} nanoparticles exhibited superior photocatalytic activities. • The possible photocatalytic mechanism of Sm-doped BiFeO{sub 3} nanospheres was discussed. - Abstract: In this work, the effect of Sm doping on the structural and photocatalytic properties of BiFeO{sub 3} (BFO) was investigated. A series of Sm doped BFO nanoparticles containing different Sm dopant contents (Bi{sub (1−x)}Sm{sub x}FeO{sub 3}, x = 0.00, 0.01, 0.03, 0.05, 0.07, 0.10) were synthesized via a simple sol-gel route. It was revealed that Sm{sup 3+} ions were successfully doped into BFO nanoparticles, and the band gap value was gradually decreased when increasing Sm dopant concentration. The photocatalytic activity of Sm-doped BFO photocatalyst was significantly affected by the Sm doping content. Compared to pure BFO, the Sm-doped BFO samples exhibited much higher photocatalytic activity. The improved photocatalytic activity of Sm-doped BFO could be attributed to the enhanced visible light absorption and the efficient separation of photogenerated electrons and holes derived from Sm dopant trapping level in the Sm-doped BFO samples. In addition, the possible photocatalytic mechanism of Sm-doped BFO photocatalyst was also proposed.

  8. Neutron transmutation doped Ge bolometers

    Science.gov (United States)

    Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

    1983-01-01

    Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

  9. [Auxin synthesis by the higher fungus Lentinus edodes (Berk.) Sing in the presence of low concentrations of indole compounds].

    Science.gov (United States)

    Tsivileva, O M; Loshchinina, E A; Makarov, O E; Nikitina, V E

    2012-01-01

    The auxin formation in a submerged culture of the xylotrophic basidiomycete Lentinus edodes (Berk.) Sing (Lentinula edodes (Berk.) Pegler) (shiitake) is studied. Biologically active substances of an indole nature are identified, "the effect of small doses" of which lies in not only the stimulation of growth of the mycelium (indole-3-acetic acid, 2 x 10(-7)-2 x 10(-4) g/l), but also in the induction of tryptophan-independent paths of auxin biosynthesis. The above-mentioned path is realized in the presence of exogenous indole (1 x 10(-3)-1 x 10(-4) g/l), as well as while inducing the biosynthesis of indole-3-acetic acid by its microadditives (1 x 10(-5)-1 x 10(-8) g/l), and is accompanied by the formation of anthranilic acid (up to 1.5 mg/l). Induction of the generative development stage ofshiitake by indole derivatives is revealed. It was found that among the studied compounds only indoleacetamide at a concentration of an order of x 10(-4) g/l in the culture fluid of L. edodes had a pronounced stimulatory effect on the formation of shiitake's brown mycelial film.

  10. Supercritical temperature synthesis of fluorine-doped VO2(M) nanoparticle with improved thermochromic property

    Science.gov (United States)

    Riapanitra, Anung; Asakura, Yusuke; Cao, Wenbin; Noda, Yasuto; Yin, Shu

    2018-06-01

    Fluorine-doped VO2(M) nanoparticles have been successfully synthesized using the hydrothermal method at a supercritical temperature of 490 °C. The pristine VO2(M) has the critical phase transformation temperature of 64 °C. The morphology and homogeneity of the monoclinic structure VO2(M) were adopted by the fluorine-doped system. The obtained particle size of the samples is smaller at the higher concentration of anion doping. The best reduction of critical temperature was achieved by fluorine doping of 0.13% up to 48 °C. The thin films of the fluorine-doped VO2(M) showed pronounced thermochromic property and therefore are suitable for smart window applications.

  11. Tritium-doping enhancement of polystyrene by ultraviolet laser and hydrogen plasma irradiation for laser fusion experiments

    Energy Technology Data Exchange (ETDEWEB)

    Iwasa, Yuki, E-mail: iwasa-y@ile.osaka-u.ac.jp [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Yamanoi, Kohei; Iwano, Keisuke; Empizo, Melvin John F.; Arikawa, Yasunobu; Fujioka, Shinsuke; Sarukura, Nobuhiko; Shiraga, Hiroyuki; Takagi, Masaru; Norimatsu, Takayoshi; Azechi, Hiroshi [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Noborio, Kazuyuki; Hara, Masanori; Matsuyama, Masao [Hydrogen Isotope Research Center, Organization for Promotion of Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)

    2016-11-15

    Highlights: • Tritium-doped polystyrene films are fabricated by the Wilzbach method with UV laser and hydrogen plasma irradiation. • The 266-nm laser-irradiated, 355-nm laser-irradiated, and hydrogen plasma-irradiated polystyrene films exhibit higher PSL intensities and specific radioactivities than the non-irradiated sample. • Tritium doping by UV laser irradiation can be largely affected by the laser wavelength because of polystyrene’s absorption. • Hydrogen plasma irradiation results to a more uniform doping concentration even at low partial pressure and short irradiation time. • UV laser and plasma irradiations can be utilized to fabricate tritium-doped polystyrene shell targets for future laser fusion experiments. - Abstract: We investigate the tritium-doping enhancement of polystyrene by ultraviolet (UV) laser and hydrogen plasma irradiation. Tritium-doped polystyrene films are fabricated by the Wilzbach method with UV laser and hydrogen plasma. The 266-nm laser-irradiated, 355-nm laser-irradiated, and hydrogen plasma-irradiated polystyrene films exhibit higher PSL intensities and specific radioactivities than the non-irradiated sample. Tritium doping by UV laser irradiation can be largely affected by the laser wavelength because of polystyrene’s absorption. In addition, UV laser irradiation is more localized and concentrated at the spot of laser irradiation, while hydrogen plasma irradiation results to a more uniform doping concentration even at low partial pressure and short irradiation time. Both UV laser and plasma irradiations can nevertheless be utilized to fabricate tritium-doped polystyrene targets for future laser fusion experiments. With a high doping rate and efficiency, a 1% tritium-doped polystyrene shell target having 7.6 × 10{sup 11} Bq g{sup −1} specific radioactivity can be obtained at a short period of time thereby decreasing tritium consumption and safety management costs.

  12. Phase evaluation of YSZ upon doping with Ta"5"+, Ti"4"+ and Ca"2"+ with combined Raman and XRD analysis

    International Nuclear Information System (INIS)

    Bhattacharya, A.; Shklover, V.; Wermelinger, T.

    2012-01-01

    To improve the phase stability of 7YSZ (7 wt%-Y_2O_3-doped ZrO_2), it has been doped with larger (Ca"2"+) and smaller (Ti"4"+ or Ta"5"+) ions. Complementary Raman and XRD studies of these stabilized systems have been performed. The tetragonal symmetry of the Ta"5"+-ion-doped YSZ sample and the Ti"4"+-doped YSZ sample, and the cubic symmetry of Ca"2"+-doped YSZ have been confirmed both by means of XRD and Raman analyses. Raman scattering measurements show shifts of characteristic peaks when the YSZ is doped with Ta"5"+, Ti"4"+ and Ca"2"+ cations. The peak shift increased with increasing dopant concentration in the ZrO_2 lattice. The Ta-doped YSZ sample heat-treated below 1500 C contained some YTaO_4 phase, which was confirmed by means of XRD as well as by Raman spectroscopy. The effect of Ca"2"+ ion doping on the Raman peak shift was much higher than that of Y"3"+ ion doping. In this work it has been highlighted that Raman spectroscopy is a useful tool complementing XRD, for qualitative comparison of the doping effect on the lattice parameters of ZrO_2.

  13. Effect of Al doping on phase formation and thermal stability of iron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Mukul, E-mail: mgupta@csr.res.in [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Pandey, Nidhi [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Ajay [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India); Horisberger, Michael [Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stahn, Jochen [Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

    2015-11-25

    In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe–N) thin films. Fe–N thin films with different concentration of Al (Al = 0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 and 100%. The structural and magnetic properties of the films were studied using x-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe–N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3 at.%, nitrogen rich non-magnetic Fe–N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe–N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2 at.% improves it marginally, whereas, for 3, 6 and 12 at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe–N and Al–N. - Highlights: • Doping effects of Al on Fe–N phase formation is studied. • Phase formation shows a non-monotonic behavior with Al doping. • Low doping levels of Al enhance and high levels retard the nitridation process. • Al doping beyond 3 at.% improve thermal stability of Fe–N films.

  14. Investigations of solution-processed charge generation unit with low concentration of small molecule doped in p-type/HAT-CN{sub 6} for tandem OLED

    Energy Technology Data Exchange (ETDEWEB)

    Talik, N.A., E-mail: azrina_talik@hotmail.com [Low Dimensional Material Research Centre (LDMRC), Physics Dept., Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Yeoh, K.H. [Low Dimensional Material Research Centre (LDMRC), Physics Dept., Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Centre for Photonics and Advanced Materials Research (CPR), Lee Kong Chian Faculty of Engineering and Science, University Tunku Abdul Rahman, 43000 Kajang, Selangor (Malaysia); Ng, C.Y.B. [Low Dimensional Material Research Centre (LDMRC), Physics Dept., Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Tan, C.Y. [Centre of Advanced Manufacturing & Material Processing (AMMP), Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Yap, B.K., E-mail: kbyap@uniten.edu.my [Centre of Microelectronic and Nano Engineering (CeMNE), College of Engineering, Universiti Tenaga Nasional, 43000 Kajang, Selangor (Malaysia)

    2016-01-15

    We investigated the charge generation and injection mechanism in solution processed charge generation unit (CGU) used in our high performance tandem organic light emitting diode (OLED) via capacitance–voltage (C–V) and current density–voltage (J–V) measurements. By doping 2 wt% of small molecule 1,1-bis-(4-bis(4-tolyl)-aminophenyl) cyclohexene (TAPC) into Poly (N-vinylcarbazole) (PVK) as p-type layer of the CGU, we obtained more than two folds improvement in the tandem device efficiency compared to single device. The performance improvement of the TAPC doped CGU could be attributed to low built-in potential, large vacuum level shift as well as high charge density for efficient charge generation. - Highlights: • Charge-generation and injection mechanism in CGU for tandem OLED is investigated. • Small molecule, TAPC doped in p-type/HAT-CN{sub 6} has been used for tandem OLED. • The improvement attributes to the lower V{sub bi} and larger ΔV{sub L} in doped layer. • Narrower W and high carrier density also contribute to efficiency improvement.

  15. Investigations of solution-processed charge generation unit with low concentration of small molecule doped in p-type/HAT-CN6 for tandem OLED

    International Nuclear Information System (INIS)

    Talik, N.A.; Yeoh, K.H.; Ng, C.Y.B.; Tan, C.Y.; Yap, B.K.

    2016-01-01

    We investigated the charge generation and injection mechanism in solution processed charge generation unit (CGU) used in our high performance tandem organic light emitting diode (OLED) via capacitance–voltage (C–V) and current density–voltage (J–V) measurements. By doping 2 wt% of small molecule 1,1-bis-(4-bis(4-tolyl)-aminophenyl) cyclohexene (TAPC) into Poly (N-vinylcarbazole) (PVK) as p-type layer of the CGU, we obtained more than two folds improvement in the tandem device efficiency compared to single device. The performance improvement of the TAPC doped CGU could be attributed to low built-in potential, large vacuum level shift as well as high charge density for efficient charge generation. - Highlights: • Charge-generation and injection mechanism in CGU for tandem OLED is investigated. • Small molecule, TAPC doped in p-type/HAT-CN 6 has been used for tandem OLED. • The improvement attributes to the lower V bi and larger ΔV L in doped layer. • Narrower W and high carrier density also contribute to efficiency improvement.

  16. Women Administered Standard Dose Imatinib for Chronic Myeloid Leukemia Have Higher Dose-Adjusted Plasma Imatinib and Norimatinib Concentrations Than Men.

    Science.gov (United States)

    Belsey, Sarah L; Ireland, Robin; Lang, Kathryn; Kizilors, Aytug; Ho, Aloysius; Mufti, Ghulam J; Bisquera, Alessandra; De Lavallade, Hugues; Flanagan, Robert J

    2017-10-01

    The standard dose of imatinib for the treatment of chronic-phase chronic myeloid leukemia (CML) is 400 mg·d. A predose plasma imatinib concentration of >1 mg·L is associated with improved clinical response. This study aimed to assess the plasma imatinib and norimatinib concentrations attained in patients with chronic myeloid leukemia administered standard doses of imatinib adjusted for dose, age, sex, body weight, and response. We evaluated data from a cohort of patients treated between 2008 and 2014 with respect to dose, age, sex, body weight, and response. The study comprised 438 samples from 93 patients (54 male, 39 female). The median imatinib dose was 400 mg·d in men and in women. The plasma imatinib concentration ranged 0.1-5.0 mg·L and was below 1 mg·L in 20% and 16% of samples from men and women, respectively. The mean dose normalized plasma imatinib and norimatinib concentrations were significantly higher in women in comparison with men. This was partially related to body weight. Mixed effects ordinal logistic regression showed no evidence of an association between sex and plasma imatinib (P = 0.13). However, there was evidence of an association between sex and plasma norimatinib, with higher norimatinib concentrations more likely in women than in men (P = 0.02). Imatinib therapeutic drug monitoring only provides information on dosage adequacy and on short-term adherence; longer-term adherence cannot be assessed. However, this analysis revealed that approximately 1 in 5 samples had a plasma imatinib concentration <1 mg·L, which was suggestive of inadequate dosage and/or poor adherence and posed a risk of treatment failure. Higher imatinib exposure in women may be a factor in the increased rate of long-term, stable, deep molecular response (undetectable breakpoint cluster-Abelson (BCR-ABL) transcript levels with a PCR sensitivity of 4.5 log, MR4.5) reported in women.

  17. Concentration and electrode material dependence of the voltammetric response of iodide on platinum, glassy carbon and boron-doped diamond in the room temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide

    International Nuclear Information System (INIS)

    Bentley, Cameron L.; Bond, Alan M.; Hollenkamp, Anthony F.; Mahon, Peter J.; Zhang, Jie

    2013-01-01

    The electro-oxidation of iodide has been investigated as a function of concentration using steady-state microelectrode voltammetry, transient cyclic voltammetry and linear-sweep semi-integral voltammetry on platinum, glassy carbon and boron-doped diamond electrodes in the room temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide. Two oxidation processes are observed on all of the investigated electrode materials, with the first being assigned to the oxidation of iodide to triiodide (confirmed by UV/visible spectroscopy) and the second being attributed to the oxidation of triiodide to iodine. Iodide oxidation is kinetically more facile on platinum compared to glassy carbon or boron-doped diamond. At elevated bulk iodide concentrations, the nucleation and growth of sparingly soluble electrogenerated iodine at the electrode surface was observed and imaged in situ using optical microscopy. The diffusion coefficient of iodide was determined to be 2.59 (±0.04) × 10 −7 cm 2 s −1 and independent of the bulk concentration of iodide. The steady-state iodide oxidation current measured at a platinum microelectrode was found to be a linear function of iodide concentration, as expected if there are no contributions from non-Stokesian mass-transport processes (electron hopping and/or Grotthuss-type exchange) under the investigated conditions

  18. Effect of yttrium chromite doping on its resistance to high-temperature salt and gas corrosions

    International Nuclear Information System (INIS)

    Oryshich, I.V.; Poryadchenko, N.E.; Rakitskij, A.N.; Bega, N.D.

    1996-01-01

    Effect of yttrium chromite doping with 2-4 group metal oxides on the corrosion resistance in the air at 1300 C during 5 hours and in sodium chloride and sulfate melts at 900 C during 20 hours is investigated. A notable increase of corrosion resistance is achieved under complex doping with zirconium and magnesium oxides in a quantity, close to solubility in yttrium oxide and solubility by aluminium oxide. Doping with calcium and strontium oxides in the quantities, dose to solubility in yttrium oxide does not produce any notable effect, and at higher concentrations it reduces the corrosion resistance in media indicated. Refs. 8, refs. 2, tabs. 1

  19. Effect of silicon, tantalum, and tungsten doping and polarization on bioactivity of hydroxyapatite

    Science.gov (United States)

    Dhal, Jharana

    dopant concentration at a particular sintering temperature. Results of this study provide further evidence for use of higher valence cations to improve biological performance of HAp ceramics and to advance our understanding on mechanism of polarization in doped samples.

  20. Mechanical niobium doping in barium titanate electroceramics

    Energy Technology Data Exchange (ETDEWEB)

    Velasco-Davalos, I.A., E-mail: ivan.velascodavalos@gmail.com [Departmento de Ingeniería Metalúrgica, Instituto Politécnico Nacional, Zacatenco, 07338 México D.F. (Mexico); INRS-EMT, 1650 Boul. Lionel-Boulet, Varennes J3X 1S2 (Canada); Ruediger, A. [INRS-EMT, 1650 Boul. Lionel-Boulet, Varennes J3X 1S2 (Canada); Cruz-Rivera, J.J. [Universidad Autónoma de San Luis Potosí, Av. Sierra Leona 550, Lomas, 78210 S.L.P. (Mexico); Gomez-Yanez, C. [Departmento de Ingeniería Metalúrgica, Instituto Politécnico Nacional, Zacatenco, 07338 México D.F. (Mexico)

    2013-12-25

    Highlights: •We demonstrate a new doping procedure by Mechanical Alloying (MA). •For small dopant concentrations, charge compensation of Nb is primarily attributed to free electrons. •At higher Nb concentrations cation vacancies prevail as compensation mechanism. -- Abstract: Niobium is a well-established donor dopant for semi-conducting BaTiO{sub 3} ceramics. The conventional procedure to dissolve Nb into BaTiO{sub 3} relies on thermal activation at high temperatures (up to 1500 °C) and even then, large dwell times are necessary due to the small diffusion coefficients of Nb{sup 5+}. In this work, we demonstrate a new doping procedure by Mechanical Alloying (MA), which has already proven its potential for the fabrication of conductive electroceramics. In a planetary mill, powders of BaTiO{sub 3} and Nb{sub 2}O{sub 5} were mixed for up to 540 min. The BaTiO{sub 3} unit cell volume increases with increasing Nb concentration. The electrical properties of conventional and mechanical alloyed samples as a function of Nb concentration are similar, however the mechanically alloyed samples shows a large conductivity that we attribute to a better homogeneity in the structure of MA-processed samples. For small dopant concentrations, charge compensation of the pentavalent Nb is primarily attributed to free electrons. At higher Nb concentrations cation vacancies prevail as compensation mechanism.

  1. Application of nanostructured Ca doped CeO2 for ultraviolet filtration

    International Nuclear Information System (INIS)

    Truffault, Laurianne; Ta, Minh-Tri; Devers, Thierry; Konstantinov, Konstantin; Harel, Valerie; Simmonard, Cyriaque; Andreazza, Caroline; Nevirkovets, Ivan P.; Pineau, Alain; Veron, Olivier; Blondeau, Jean-Philippe

    2010-01-01

    Calcium doped CeO 2 nanoparticles with doping concentrations between 0 and 50 mol% were synthesized by a co-precipitation method for ultraviolet filtration application. Below 20 mol% doping concentration, the samples were single-phase. From 30 mol%, CaCO 3 appears as a secondary phase. The calculated CeO 2 mean crystallite size was 9.3 nm for the pure and 5.7 nm for the 50 mol% Ca-doped sample. Between 250 and 330 nm, the absorbance increased for the 10, 30, and 40 mol% Ca-doped samples compared to the pure one. The band-gap was found to be 3.20 eV for the undoped, and between 3.36 and 3.51 eV for the doped samples. The blue shifts are attributed to the quantum confinement effect. X-ray photoelectron spectroscopy showed that the Ce 3+ atomic concentration in the pure sample was higher than that of the 20 mol% Ca-doped sample.

  2. The effect of p-doping on multi-state lasing in InAs/InGaAs quantum dot lasers for different cavity lengths

    Science.gov (United States)

    Korenev, V. V.; Savelyev, A. V.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu M.; Zhukov, A. E.

    2017-11-01

    The effect of modulation p-doping on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied for different levels of acceptor concentration. It is shown that in case of the short laser cavities, p-doping results in higher output power of the ground-state optical transitions of InAs/InGaAs QDs whereas in longer samples p-doping may result in the decrease of this power component. On the basis of this observation, the optimal design of laser active region and optimal doping level are discussed in details.

  3. Airplane dopes and doping

    Science.gov (United States)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  4. Scintillation properties of transparent Lu{sub 3}Al{sub 5}O{sub 12} (LuAG) ceramics doped with different concentrations of Pr{sup 3+}

    Energy Technology Data Exchange (ETDEWEB)

    Yanagida, Takayuki; Fukabori, Akihiro; Fujimoto, Yutaka; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira; Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira Aoba-ku, 980-8577 Sendai (Japan); Ikesue, Akio [World Labo, Co. Ltd., Mutsuno 2-4-1, Atsuta, 456-0023 Nagoya (Japan); Kataoka, Jun [School of Advanced Science and Engineering,Waseda University, Ohkubo 3-4-1, Shinjuku, 169-0072 Tokyo (Japan)

    2011-01-15

    Transparent ceramics of Pr-doped (0.2 mol%, 0.6 mol%, 1 mol%, and 2 mol%) Lu{sub 3}Al{sub 5}O{sub 12} (LuAG) scintillators produced by the sintering method are discussed. These materials were cut to the specimens with physical dimensions of 5 x 5 x 2 mm{sup 3}. Similar size specimens were also prepared from Czochralski grown Pr:LuAG single crystals to compare scintillation properties. Their transmittance and radio luminescence spectra were evaluated. All specimens were highly transparent in wavelength range above 300 nm, and intense Pr{sup 3+} 5d-4f emission was detected around 310 and 370 nm under excitation with X-ray. Under {sup 137}Cs {gamma}-ray is irradiation, 2 keV photo-absorption peaks were also clearly observed in each sample. The Pr 0.6 mol% doped LuAG ceramics demonstrated highest light yield achievable among the ceramics, and it was half of that observed in the single crystals. Under pulse X-ray excitation, the decay time constants became faster when Pr concentration increased, and. the fastest decay ({proportional_to}5.7 ns time constant) was noticed in the 2 mol% doped ceramic. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of β-FeSi2 by magnetron sputtering

    International Nuclear Information System (INIS)

    Xu Jiaxiong; Yao Ruohe

    2011-01-01

    Boron-doped or phosphorus-doped β-FeSi 2 thin films have been prepared on silicon substrate by magnetron sputtering. Effects of Si/Fe ratio on the boron and phosphorus doping efficiencies have been studied from the resistivities of doped β-FeSi 2 thin films and current-voltage characteristics of doped β-FeSi 2 /Si heterojunctions. The experimental results reveal that the carrier concentration and doping efficiency of boron or phosphorus dopants at the Fe-rich side are higher than that at the Si-rich side. The effect of Si/Fe ratio can be deduced from the comparison of the formation energies under two extreme conditions. At the Fe-rich limit condition, the formation energy of boron or phosphorous doping is lower than that at the Si-rich condition. Therefore, the activation of impurities is more effective at the Fe-rich side. These results demonstrate that the boron-doped and phosphorous-doped β-FeSi 2 thin films should be kept at the Fe-rich side to avoid the unexpected doping sites and low doping efficiency.

  6. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    Energy Technology Data Exchange (ETDEWEB)

    Siddiqua, Poppy; O' Leary, Stephen K., E-mail: stephen.oleary@ubc.ca [School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia V1V 1V7 (Canada)

    2016-09-07

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  7. Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

    International Nuclear Information System (INIS)

    Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie; Gu, Changzhi

    2014-01-01

    B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity

  8. A Western Diet Pattern Is Associated with Higher Concentrations of Blood and Bone Lead among Middle-Aged and Elderly Men.

    Science.gov (United States)

    Wang, Xin; Ding, Ning; Tucker, Katherine L; Weisskopf, Marc G; Sparrow, David; Hu, Howard; Park, Sung Kyun

    2017-07-01

    Background: Little is known about the effects of overall dietary pattern on lead concentration. Objective: We examined the association of overall dietary patterns, derived from a semiquantitative food frequency questionnaire, with bone and blood lead concentrations. Methods: These longitudinal analyses included mostly non-Hispanic white, middle-aged-to-elderly men from the Veterans Affairs Normative Aging Study. Long-term lead exposures were measured as tibia and patella lead concentrations by using K-shell-X-ray fluorescence. Short-term lead exposures were measured as blood lead concentrations by using graphite furnace atomic absorption spectroscopy. Dietary pattern scores were derived by using factor analysis. Linear mixed-effects models were utilized to predict blood lead concentrations among 983 men, aged 44-92 y at baseline, with a total of 3273 observations (during 1987-2008). We constructed linear regression models to determine the relations between dietary patterns and bone lead concentrations among 649 participants with an age range of 49-93 y. Results: Two major dietary patterns were identified: a prudent dietary pattern, characterized by high intakes of fruit, legumes, vegetables, whole grains, poultry, and seafood; and a Western dietary pattern, characterized by high intakes of processed meat, red meat, refined grains, high-fat dairy products, French fries, butter, and eggs. After adjusting for age, smoking status, body mass index, total energy intake, education, occupation, neighborhood-based education and income level, men in the highest tertile of the Western pattern score (compared with the lowest) had 0.91 μg/dL (95% CI: 0.41, 1.42 μg/dL) higher blood lead, 5.96 μg/g (95% CI: 1.76, 10.16 μg/g) higher patella lead, and 3.83 μg/g (95% CI: 0.97, 6.70 μg/g) higher tibia lead. No significant association was detected with the prudent dietary pattern in the adjusted model. Conclusions: These findings suggest that the Western diet is associated with

  9. Structure and functionality of bromine doped graphite.

    Science.gov (United States)

    Hamdan, Rashid; Kemper, A F; Cao, Chao; Cheng, H P

    2013-04-28

    First-principles calculations are used to study the enhanced in-plane conductivity observed experimentally in Br-doped graphite, and to study the effect of external stress on the structure and functionality of such systems. The model used in the numerical calculations is that of stage two doped graphite. The band structure near the Fermi surface of the doped systems with different bromine concentrations is compared to that of pure graphite, and the charge transfer between carbon and bromine atoms is analyzed to understand the conductivity change along different high symmetry directions. Our calculations show that, for large interlayer separation between doped graphite layers, bromine is stable in the molecular form (Br2). However, with increased compression (decreased layer-layer separation) Br2 molecules tend to dissociate. While in both forms, bromine is an electron acceptor. The charge exchange between the graphite layers and Br atoms is higher than that with Br2 molecules. Electron transfer to the Br atoms increases the number of hole carriers in the graphite sheets, resulting in an increase of conductivity.

  10. A lower degree of PBMC L1 methylation is associated with excess body weight and higher HOMA-IR in the presence of lower concentrations of plasma folate.

    Science.gov (United States)

    Piyathilake, Chandrika J; Badiga, Suguna; Alvarez, Ronald D; Partridge, Edward E; Johanning, Gary L

    2013-01-01

    Identification of associations between global DNA methylation and excess body weight (EBW) and related diseases and their modifying factors are an unmet research need that may lead to decreasing DNA methylation-associated disease risks in humans. The purpose of the current study was to evaluate the following; 1) Association between the degree of peripheral blood mononuclear cell (PBMC) L1 methylation and folate, and indicators of EBW, 2) Association between the degree of PBMC L1 methylation and folate, and insulin resistance (IR) as indicated by a higher homeostasis model assessment (HOMA-IR). The study population consisted of 470 child-bearing age women diagnosed with abnormal pap. The degree of PBMC L1 methylation was assessed by pyrosequencing. Logistic regression models specified indicators of EBW (body mass index-BMI, body fat-BF and waist circumference-WC) or HOMA-IR as dependent variables and the degree of PBMC L1 methylation and circulating concentrations of folate as the independent predictor of primary interest. Women with a lower degree of PBMC L1 methylation and lower plasma folate concentrations were significantly more likely to have higher BMI, % BF or WC (OR = 2.49, 95% CI:1.41-4.47, P = 0.002; OR = 2.49, 95% CI:1.40-4.51, P = 0.002 and OR = 1.98, 95% = 1.14-3.48 P = 0.0145, respectively) and higher HOMA-IR (OR = 1.78, 95% CI:1.02-3.13, P = 0.041). Our results demonstrated that a lower degree of PBMC L1 methylation is associated with excess body weight and higher HOMA-IR, especially in the presence of lower concentrations of plasma folate.

  11. Superconductivity in doped fullerenes

    International Nuclear Information System (INIS)

    Hebard, A.F.

    1992-01-01

    While there is not complete agreement on the microscopic mechanism of superconductivity in alkali-metal-doped C 60 , further research may well lead to the production of analogous materials that lose resistance at even higher temperatures. Carbon 60 is a fascinating and arrestingly beautiful molecule. With 12 pentagonal and 20 hexagonal faces symmetrically arrayed in a soccer-ball-like structure that belongs to the icosahedral point group, I h , its high symmetry alone invites special attention. The publication in September 1990 of a simple technique for manufacturing and concentrating macroscopic amounts of this new form of carbon announced to the scientific community that enabling technology had arrived. Macroscopic amounts of C 60 (and the higher fullerenes, such as C 70 and C 84 ) can now be made with an apparatus as simple as an arc furnace powered with an arc welding supply. Accordingly, chemists, physicists and materials scientists have joined forces in an explosion of effort to explore the properties of this unusual molecular building block. 23 refs., 6 figs

  12. Superconductivity in doped fullerenes

    International Nuclear Information System (INIS)

    Herbard, A.F.

    1996-01-01

    While there is not complete agreement on the microscopic mechanism of superconductivity in alkali-metal-doped C sup 0, further research may well lead to the production of analogous materials that lose resistance at even higher temperatures. Carbon 60 is a fascinating and arrestingly beautiful molecule. With 12 pentagonal and 20 hexagonal faces symmetrically arrayed in a soccer-ball-like structure that belongs to the icosahedral point group, I sub h, its high symmetry alone invites special attention. The publication in september 1990 of a simple technique for manufacturing and concentrating macroscopic amounts of this new form of carbon announced to the scientific community that enabling technology had arrived. Macroscopic amounts of C sub 6 sub 0 (and the higher fullerenes, such as C sub 7 sub 0 and C sub 8 sub 4) can now be made with an apparatus as simple as an arc furnace powered with an arc welding supply. Accordingly, chemists, physicists and materials scientists have joined forces in an explosion of effort to explore the properties of this unusual molecular building block. (author). 23 refs., 6 figs

  13. Higher concentrations of nanoscale zero-valent iron (nZVI) in soil induced rice chlorosis due to inhibited active iron transportation

    International Nuclear Information System (INIS)

    Wang, Jie; Fang, Zhanqiang; Cheng, Wen; Yan, Xiaomin; Tsang, Pokeung Eric; Zhao, Dongye

    2016-01-01

    In this study, the effects of concentrations 0, 100, 250, 500, 750 and 1000 mg kg"−"1 of nanoscale zero-valent iron (nZVI) on germination, seedlings growth, physiology and toxicity mechanisms were investigated. The results showed that nZVI had no effect on germination, but inhibited the rice seedlings growth in higher concentrations (>500 mg kg"−"1 nZVI). The highest suppression rate of the length of roots and shoots reached 46.9% and 57.5%, respectively. The 1000mg kg"−"1 nZVI caused the highest suppression rates for chlorophyll and carotenoids, at 91.6% and 85.2%, respectively. In addition, the activity of antioxidant enzymes was altered by the translocation of nanoparticles and changes in active iron content. Visible symptoms of iron deficiency were observed at higher concentrations, at which the active iron content decreased 61.02% in the shoots, but the active iron content not decreased in roots. Interestingly, the total and available amounts of iron in the soil were not less than those in the control. Therefore, the plants iron deficiency was not caused by (i) deficiency of available iron in the soil and (ii) restraint of the absorption that plant takes in the available iron, while induced by (ⅲ) the transport of active iron from the root to the shoot was blocked. The cortex tissues were seriously damaged by nZVI which was transported from soil to the root, these were proved by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). This current study shows that the mechanism of iron deficiency in rice seedling was due to transport of active iron from the root to the shoot blocked, which was caused by the uptake of nZVI. - Highlights: • Higher concentrations of nZVI induced iron deficiency in rice seedlings visibly. • nZVI was taken in rice seedlings and transported form root to shoot. • The pathway of active iron transport from root to shoot was inhibited. • The cortex tissues

  14. Synthesis and characterization of Sn doped TiO{sub 2} photocatalysts: Effect of Sn concentration on the textural properties and on the photocatalytic degradation of 2,4-dichlorophenoxyacetic acid

    Energy Technology Data Exchange (ETDEWEB)

    Rangel-Vázquez, I.; Del Angel, G.; Bertin, V. [Departamento de Química, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael, Atlixco No 1865, México 09340 D.F. (Mexico); González, F. [Departamento de Ingeniería de Procesos e Hidráulica, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael, Atlixco No 1865, México 09340 D.F. (Mexico); Vázquez-Zavala, A.; Arrieta, A. [Departamento de Química, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael, Atlixco No 1865, México 09340 D.F. (Mexico); Padilla, J.M. [Universidad Tecnológica del Centro de Veracruz, Área de Tecnología, Av. Universidad Carretera Federal Cuitláhuac-La Tinaja No. 350, Cuitláhuac, Veracruz 94910 (Mexico); Barrera, A. [Universidad de Guadalajara, Centro Universitario de la Ciénega, Av. Universidad, Número 1115, Col. Linda Vista, Apdo. Postal 106, Ocotlán Jal. (Mexico); Ramos-Ramirez, E. [Departamento de Química, División de Ciencias Naturales y Exactas, Campus Guanajuato de la Universidad de Guanajuato Noria Alta S/N, Col. Noria Alta, Guanajuato, Gto. C.P. 36050 (Mexico)

    2015-09-15

    Abstract: TiO{sub 2} and Sn-doped TiO{sub 2} materials were prepared by sol–gel method using titanium and tin alkoxides at different Sn concentration (0.1 mol%, 0.5 mol%, 1 mol%, 3 mol% and 5 mol%). Samples were characterized by thermo gravimetric analyzer with differential scanning calorimeter (TGA–DSC), X-ray Rietveld refinement, N{sub 2} adsorption (BET), transmission electron microscopy (TEM), UV–vis spectroscopies technology and Raman spectroscopy. Only anatase phase was observed in pure TiO{sub 2}, whereas anatase and brookite were obtained in Sn-doped TiO{sub 2} samples. Sn dopant acts as a promoter in phase transformation of TiO{sub 2}. The Rietveld refinements method was used to determine the relative weight of anatase and brookite, and crystallite size as a function of Sn concentration after calcination of samples at 673 K. It was also demonstrated the incorporation of Sn{sup 4+} into the anatase TiO{sub 2} structure. Sn{sup 4+} inhibits the growth of TiO{sub 2} crystallite size, which leads to an increase of the specific surface area of TiO{sub 2}. From XRD analysis, the solid solution limit of Sn{sup 4+} into TiO{sub 2} is 5 mol% Sn. The photocatalytic activity on Sn{sup 4+} doped TiO{sub 2} was determined for the 2,4-dichlorophenoxyacetic acid reaction. The maximum in activity was attributed to the coexistence of anatase and brookite phases in the appropriate ratio and crystallite size.

  15. Magnetic properties of Fe-doped organic-inorganic nanohybrids

    Science.gov (United States)

    Silva, N. J. O.; Amaral, V. S.; Carlos, L. D.; de Zea Bermudez, V.

    2003-05-01

    We present a magnetic study of Fe-doped diureasils (siloxane-based networks to which poly(ethylene oxide)-based chains are grafted by urea cross linkages doped with Fe(II) or Fe(III) ions. Structural studies show that the Fe(II) ions interact mainly with the organic chain, whereas the incorporation of Fe(III) leads to the formation of iron-based nanoclusters, with radius increasing from 20 to 40 Å. Fe(II)-doped samples behave as simple paramagnets, with μeff=5.32μB. Fe(III)-doped hybrids present antiferromagnetic interactions, with TN increasing with Fe(III) concentration up to 13.6 K for 6% doping. Thermal irreversibility was observed below ˜40 K and is stronger for higher concentrations. The coercive fields (HC) are of the order of 1000 Oe at 5 K. Hysteresis cycles are shifted to negative fields, revealing the presence of exchange anisotropy interactions with exchange fields (HE) of the order of 100 Oe. Both fields decrease rapidly with increasing temperature. We analyze this behavior in terms of the contribution of surface spin disorder to exchange anisotropy.

  16. Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

    Science.gov (United States)

    Kim, Dong-Hwan; Jeong, Jun-Seok; Eom, Su-Keun; Lee, Jae-Gil; Seo, Kwang-Seok; Cha, Ho-Young

    2017-11-01

    In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of 1 × 1019 cm -3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics.

  17. Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis

    Science.gov (United States)

    Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro

    2018-04-01

    The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.

  18. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    International Nuclear Information System (INIS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R.P.

    2016-01-01

    Highlights: • Cu_1_−_xCo_xS nanoparticles were synthesized via chemical co-precipitation method. • Structural, band gap, magnetization and photocatalysis studies were carried out. • All the doped samples exhibited intrinsic room temperature ferromagnetism. • Effect of magnetic properties on photocatalytic activity was analyzed. • CuS:Co nanoparticles may find applications in photocatalytic and spintronic devices. - Abstract: Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV–vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  19. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sreelekha, N.; Subramanyam, K. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Department of Physics, Raghu Engineering College, Visakhapatnam, Andrapradesh 531162 (India); Amaranatha Reddy, D. [Department of Chemistry and Chemical Institute for Functional Materials, Pusan National University, Busan 609735 (Korea, Republic of); Murali, G. [Department of BIN Fusion Technology & Department of Polymer-Nano Science and Technology, Chonbuk National University, Jeonju, Jeonbuk (Korea, Republic of); Ramu, S. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Rahul Varma, K. [Department of Mechanical Engineering, University of California, Berkeley (United States); Vijayalakshmi, R.P., E-mail: vijayaraguru@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India)

    2016-08-15

    Highlights: • Cu{sub 1−x}Co{sub x}S nanoparticles were synthesized via chemical co-precipitation method. • Structural, band gap, magnetization and photocatalysis studies were carried out. • All the doped samples exhibited intrinsic room temperature ferromagnetism. • Effect of magnetic properties on photocatalytic activity was analyzed. • CuS:Co nanoparticles may find applications in photocatalytic and spintronic devices. - Abstract: Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV–vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  20. Mixed microalgae consortia growth under higher concentration of CO2 from unfiltered coal fired flue gas: Fatty acid profiling and biodiesel production.

    Science.gov (United States)

    Aslam, Ambreen; Thomas-Hall, Skye R; Manzoor, Maleeha; Jabeen, Faiza; Iqbal, Munawar; Uz Zaman, Qamar; Schenk, Peer M; Asif Tahir, M

    2018-02-01

    Biodiesel is produced by transesterification of fatty acid methyl esters (FAME) from oleaginous microalgae feedstock. Biodiesel fuel properties were studied and compared with biodiesel standards. Qualitative analysis of FAME was done while cultivating mixed microalgae consortia under three concentrations of coal fired flue gas (1%, 3.0% and 5.5% CO 2 ). Under 1% CO 2 concentration (flue gas), the FAME content was 280.3 μg/mL, whereas the lipid content was 14.03 μg/mL/D (day). Both FAMEs and lipid contents were low at other CO 2 concentrations (3.0 and 5.5%). However, mixed consortia in the presence of phosphate buffer and flue gas (PB + FG) showed higher saturated fatty acids (SFA) (36.28%) and unsaturated fatty acids (UFA) (63.72%) versus 5.5% CO 2 concentration, which might be responsible for oxidative stability of biodiesel. Subsequently, higher cetane number (52) and low iodine value (136.3 gI 2 /100 g) biodiesel produced from mixed consortia (PB + FG) under 5.5% CO 2 along with 50 mM phosphate buffer were found in accordance with European (EN 14214) standard. Results revealed that phosphate buffer significantly enhanced the biodiesel quality, but reduced the FAME yield. This study intended to develop an integrated approach for significant improvement in biodiesel quality under surplus phosphorus by utilizing waste flue gas (as CO 2 source) using microalgae. The CO 2 sequestration from industrial flue gas not only reduced greenhouse gases, but may also ensure the sustainable and eco-benign production of biodiesel. Copyright © 2018. Published by Elsevier B.V.

  1. A short literature survey on iron and cobalt ion doped TiO2 thin films and photocatalytic activity of these films against fungi

    International Nuclear Information System (INIS)

    Tatlıdil, İlknur; Bacaksız, Emin; Buruk, Celal Kurtuluş; Breen, Chris; Sökmen, Münevver

    2012-01-01

    Highlights: ► Co or Fe doped TiO 2 thin films were prepared by sol–gel method. ► We obtained lower E g values for Fe-doped and Co-TiO 2 thin films. ► Doping greatly affected the size and shape of the TiO 2 nanoparticles. ► Photocatalytic killing effect of the doped TiO 2 thin films on C. albicans and A. niger was significantly higher than undoped TiO 2 thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe 3+ or Co 2+ ion doped TiO 2 thin films and suspensions were summarized. Additionally, a sol–gel method was used for preparation of the 2% Co or Fe doped TiO 2 thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E g value was 3.40 eV for the pure TiO 2 , 3.00 eV for the Fe-doped TiO 2 film and 3.25 eV for Co-TiO 2 thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO 2 nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO 2 thin film on Candida albicans was significantly higher than Fe doped TiO 2 thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

  2. Growth and characterization of heavily doped silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

    2011-08-15

    Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Doping of (Bi,Pb)-2223 with metal oxides

    International Nuclear Information System (INIS)

    Goehring, D.; Vogt, M.; Wischert, W.; Kemmler-Sack, S.

    1997-01-01

    The effect of doping on formation, superconductivity and pinning forces of (Bi,Pb)-2223 was studied for several dopants. They can be subdivided into promoters (Cu, Mn at low doping level of x=0.1 and Rh) and inhibitors (Mg, Al, Sn, Co, Y, Pd and high substitution levels of Mn and Ni) of the transformation of the precursor material into (Bi,Pb)-2223. According to X-ray diffraction (XRD) studies the incorporation of the dopant into the 2223 lattice is restricted to a very low doping level. Higher dopant concentrations are accompanied by a segregation of secondary phases. These segregations are not effective in the process of creating flux pinning centres. A depression of T c is observed for 2223 materials with the dopants Co, Ni and Pd. (orig.)

  4. Efficient photoelectrochemical water splitting by a doping-controlled GaN photoanode coated with NiO cocatalyst

    International Nuclear Information System (INIS)

    Kang, Jin-Ho; Kim, Soo Hee; Ebaid, Mohamed; Lee, June Key; Ryu, Sang-Wan

    2014-01-01

    Efficient photoelectrochemical (PEC) water splitting was demonstrated by a doping-controlled GaN photoanode coated with NiO cocatalyst. Highly doped n-GaN was sandwiched between undoped GaN layers to effectively collect electrons through ohmic contact. With zero external bias, the photocurrent density of the optimized doping profile was ∼3.5 times higher than that of the undoped GaN reference. However, the increased doping concentration degraded the photoanode stability, which was attributed to crystalline defects generated in the highly doped n-GaN. NiO cocatalyst improved the long-term stability of the photoanode because of GaN/NiO band alignment, enhancing hole transport into NiO and suppressing PEC corrosion mediated by hole crowding in GaN. This work established a design strategy for increasing the photocurrent as well as improving stability during water splitting with a GaN-based photoanode

  5. Tuning the morphology, stability and photocatalytic activity of TiO2 nanocrystal colloids by tungsten doping

    International Nuclear Information System (INIS)

    Xu, Haiping; Liao, Jianhua; Yuan, Shuai; Zhao, Yin; Zhang, Meihong; Wang, Zhuyi; Shi, Liyi

    2014-01-01

    Graphical abstract: - Highlights: • W 6+ -doped TiO 2 nanocrystal colloids were prepared by hydrothermal methods. • The properties of TiO 2 nanocrystal colloids can be tuned by tungsten doping. • W 6+ -doped TiO 2 nanocrystal colloids show higher stability and dispersity. • W 6+ -doped TiO 2 nanocrystal colloids show higher photocatalytic activity. - Abstract: The effects of tungsten doping on the morphology, stability and photocatalytic activity of TiO 2 nanocrystal colloids were investigated. The nanostructure, chemical state of Ti, W, O, and the properties of tungsten doped TiO 2 samples were investigated carefully by TEM, XRD, XPS, UV–vis, PL and photocatalytic degradation experiments. And the structure–activity relationship was discussed according to the analysis and measurement results. The analysis results reveal that the morphology, zeta potential and photocatalytic activity of TiO 2 nanocrystals can be easily tuned by changing the tungsten doping concentration. The tungsten doped TiO 2 colloid combines the characters of high dispersity and high photocatalytic activity

  6. Superior integrin activating capacity and higher adhesion to fibrinogen matrix in buffy coat-derived platelet concentrates (PCs) compared to PRP-PCs.

    Science.gov (United States)

    Beshkar, Pezhman; Hosseini, Ehteramolsadat; Ghasemzadeh, Mehran

    2018-02-01

    Regardless of different sources, methods or devices which are applied for preparation of therapeutic platelets, these products are generally isolated from whole blood by the sedimentation techniques which are based on PRP or buffy coat (BC) separation. As a general fact, platelet preparation and storage are also associated with some deleterious changes that known as platelet storage lesion (PSL). Although these alternations in platelet functional activity are aggravated during storage, whether technical issues within preparation can affect integrin activation and platelet adhesion to fibrinogen were investigated in this study. PRP- and BC-platelet concentrates (PCs) were subjected to flowcytometry analysis to examine the expression of platelet activation marker, P-selectin as well as active confirmation of the GPIIb/IIIa (α IIb β 3 ) on day 0, 1, 3 and 5 post-storage. Platelet adhesion to fibrinogen matrix was evaluated by fluorescence microscopy. Glucose concentration and LDH activity were also measured by colorimetric methods. The increasing P-selectin expression during storage was in a reverse correlation with PAC-1 binding (r = -0.67; p = .001). PRP-PCs showed the higher level of P-selectin expression than BC-PCs, whereas the levels of PAC-1 binding and platelet adhesion to fibrinogen matrix were significantly lower in PRP-PCs. Higher levels of active confirmation of the GPIIb/IIIa in BC-PCs were also associated with greater concentration of glucose in these products. We demonstrated the superior capacities of integrin activation and adhesion to fibrinogen for BC-PCs compared to those of PRP-PCs. These findings may provide more advantages for BC method of platelet preparation. Copyright © 2017 Elsevier Ltd. All rights reserved.

  7. The origin of current blocking in interfacial conduction in Sr-doped lanthanum gallates

    Science.gov (United States)

    Park, Hee Jung

    2018-02-01

    The grain boundary transport of lanthanum gallate has been studied with various doping concentrations, and the origins of blocking on the grain boundary are compared. La1-xSrxGaO3 samples (x = 0.005, 0.01, 0.05 and 0.1) have been prepared and their bulk (grain) and grain boundary resistances been experimentally measured as a function of temperature (T: 200-550 °C) and oxygen partial pressure (Po2) using ac-impedance measurements. In addition, Hebb-Wagner polarization measurements have been conducted to investigate the electrical conductivity of minor charge carriers in the lanthanum gallates. The grain boundary resistance in the low-doped materials (x = 0.005 and 0.01) increases with increasing Po2 while in the highly-doped materials (x = 0.05, 0.1) it hardly depended on Po2. At lower concentrations conduction is mixed and at higher concentrations is found to be predominantly ionic conductivity. The space charge model successfully describes the mixed conduction at the grain boundary at low-doping, but does not explain the predominant ionic conductivity at high-doping. The origin of blocking at high-doping is explained by the crystallographic asymmetry of the grain boundary with respect to the bulk and/or Sr-segregation.

  8. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

    Science.gov (United States)

    Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi

    2012-02-02

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh.

  9. Theoretical optimization of base doping concentration for radiation resistance of InGaP subcells of InGaP/GaAs/Ge based on minority-carrier lifetime

    International Nuclear Information System (INIS)

    Elfiky, Dalia; Yamaguchi, Masafumi; Sasaki, Takuo

    2010-01-01

    One of the fundamental objectives for research and development of space solar cells is to improve their radiation resistance. InGaP solar cells with low base carrier concentrations under low-energy proton irradiations have shown high radiation resistances. In this study, an analytical model for low-energy proton radiation damage to InGaP subcells based on a fundamental approach for radiative and nonradiative recombinations has been proposed. The radiation resistance of InGaP subcells as a function of base carrier concentration has been analyzed by using the radiative recombination lifetime and damage coefficient K for the minority-carrier lifetime of InGaP. Numerical analysis shows that an InGaP solar cell with a lower base carrier concentration is more radiation-resistant. Satisfactory agreements between analytical and experimental results have been obtained, and these results show the validity of the analytical procedure. The damage coefficients for minority-carrier diffusion length and carrier removal rate with low-energy proton irradiations have been observed to be dependent on carrier concentration through this study. As physical mechanisms behind the difference observed between the radiation-resistant properties of various base doping concentrations, two mechanisms, namely, the effect of a depletion layer as a carrier collection layer and generation of the impurity-related complex defects due to low-energy protons stopping within the active region, have been proposed. (author)

  10. Doping droops.

    Science.gov (United States)

    Chaturvedi, Aditi; Chaturvedi, Harish; Kalra, Juhi; Kalra, Sudhanshu

    2007-01-01

    Drug abuse is a major concern in the athletic world. The misconception among athletes and their coaches is that when an athlete breaks a record it is due to some "magic ingredient" and not because of training, hard work, mental attitude and championship performance. The personal motivation to win in competitive sports has been intensified by national, political, professional and economic incentives. Under this increased pressure athletes have turned to finding this "magic ingredient". Athlete turns to mechanical (exercise, massage), nutritional (vitamins, minerals), pharmacological (medicines) or gene therapies to have an edge over other players. The World Anti-Doping Agency (WADA) has already asked scientists to help find ways to prevent gene therapy from becoming the newest form of doping. The safety of the life of athletes is compromised with all forms of doping techniques, be it a side effect of a drug or a new technique of gene doping.

  11. Cyan-white-red luminescence from europium doped Al2O3-La2O3-SiO2 glasses.

    Science.gov (United States)

    Yang, Hucheng; Lakshminarayana, G; Zhou, Shifeng; Teng, Yu; Qiu, Jianrong

    2008-04-28

    Aluminum-lanthanum-silicate glasses with different Eu doping concentration have been synthesized by conventional melt-quenching method at 1680 degrees C in reductive atmosphere. Under 395nm excitation, samples with low Eu doping concentration show mainly the cyan broad emission at 460nm due to 4f(6)5d(1)-4f(7) transition of Eu(2+); and the samples with higher Eu doping concentration show mainly some narrow emissions with maximum at 616nm due to (5)D(0)-(7)F(j) (J=0, 1, 2, 3, 4) transitions of Eu(3+). Cyan-white-red tunable luminescence under 395nm excitation has been obtained by changing the Eu doping concentration.

  12. Molecular beam epitaxy of iodine-doped CdTe and (CdMg)Te

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, F.; Waag, A.; Litz, Th.; Scholl, S.; Schmitt, M.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstofforschung, Stuttgart (Germany))

    1994-08-01

    The n-type doping of CdTe and (CdMg)Te by the use of the solid dopant source material ZnI[sub 2] is reported. Doping levels as high as 7x10[sup 18] cm[sup -3] have been obtained in CdTe with carrier mobilities around 500 cm[sup 2]/V[center dot]s at room temperature. For a dopant incorporation higher than 1x10[sup 19] cm[sup -3] the free carrier concentration decreases, indicating the onset of a compensation mechanism, which is observed in the case of chlorine and bromine doping, too. Preliminary experiments show that with increasing Mg concentration the free carrier concentration decreases. Nevertheless, CdMgTe with a magnesium concentration x=0.37 (band gap 2.2 eV at room temperature) can be doped up to 2x10[sup 17] cm[sup -3]. The existence of deep donor levels in this CdTe based ternary is not supposed to be the only reason for the reduction of the free carrier concentration. For high Mg support during molecular beam epitaxial (MBE) growth of wide gap (CdMg)Te layers, the ZnI[sub 2] incorporation is reduced, leading to low doping levels, too

  13. An investigation on the In doping of ZnO thin films by spray pyrolysis

    Science.gov (United States)

    Mahesh, Devika; Kumar, M. C. Santhosh

    2018-04-01

    Indium doped zinc oxide (IGZO)thin films are gaining much interest owing to its commercial application as transparent conductive oxide thin films. In the current study thin films indium doped ZnO thin films have been deposited on glass substrates by chemical spray pyrolysis technique with an indium concentration of 1, 2.5 and 4% in Zinc source. The films show a peak shift in the X-Ray Diffraction patterns with varying indium doping concentration. The (101) peak was enhanced for the 2.5 % indium doped films and variation in grain size with the different doping levels was studied. The as-deposited films are uniform and shown high transparency (>90%) in the visible region. Average thicknesses of films are found to be 800nm, calculated using the envelope method. The film with 2.5 % of indium content was found to be highly conducting than the rest, since for the lower and higher concentrations the conductivity was possibly halted by the limit in carrier concentration and indium segregation in the grain boundaries respectively. The enhancement of mobility and carrier concentration was clearly seen in the optimum films.

  14. Band gap narrowing and fluorescence properties of nickel doped SnO2 nanoparticles

    International Nuclear Information System (INIS)

    Ahmed, Arham S.; Shafeeq, M. Muhamed; Singla, M.L.; Tabassum, Sartaj; Naqvi, Alim H.; Azam, Ameer

    2011-01-01

    Nickel-doped tin oxide nanoparticles (sub-5 nm size) with intense fluorescence emission behavior have been synthesized by sol-gel route. The structural and compositional analysis has been carried out by using XRD, TEM, FESEM and EDAX. The optical absorbance spectra indicate a band gap narrowing effect and it was found to increase with the increase in nickel concentration. The band gap narrowing at low dopant concentration ( 2 -SnO 2-x alloying effect and for higher doping it may be due to the formation of defect sub-bands below the conduction band.

  15. Band gap narrowing and fluorescence properties of nickel doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Arham S; Shafeeq, M Muhamed [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Singla, M L [Central Scientific Instruments Organization (CSIO), Council of Scientific and Industrial Research (CSIR), Materials Research and Bio-Nanotechnology Division, Sector - 30/C, Chandigarh-160030 (India); Tabassum, Sartaj [Department of Chemistry, Aligarh Muslim University, Aligarh-202002 (India); Naqvi, Alim H [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Azam, Ameer [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India)

    2011-01-15

    Nickel-doped tin oxide nanoparticles (sub-5 nm size) with intense fluorescence emission behavior have been synthesized by sol-gel route. The structural and compositional analysis has been carried out by using XRD, TEM, FESEM and EDAX. The optical absorbance spectra indicate a band gap narrowing effect and it was found to increase with the increase in nickel concentration. The band gap narrowing at low dopant concentration (<5%) can be assigned to SnO{sub 2}-SnO{sub 2-x} alloying effect and for higher doping it may be due to the formation of defect sub-bands below the conduction band.

  16. Effect of doping concentration and annealing temperature on luminescence properties of Y{sub 2}O{sub 3}:Eu{sup 3+} nanophosphor prepared by colloidal precipitation method

    Energy Technology Data Exchange (ETDEWEB)

    Siddaramana Gowd, G.; Kumar Patra, Manoj; Songara, Sandhya; Shukla, Anuj; Mathew, Manoth; Raj Vadera, Sampat [Materials Development Group, Defence Laboratory, Jodhpur (India); Kumar, Narendra, E-mail: nkjainjd@yahoo.com [Materials Development Group, Defence Laboratory, Jodhpur (India)

    2012-08-15

    Eu{sup 3+} doped Y{sub 2}O{sub 3} nanophosphors have been synthesized using the simple colloidal precipitation method. Doping of Eu{sup 3+} ions in host yttria lattice has been achieved through slow re-crystallization process under wet-chemical conditions followed by annealing at high temperatures (300-1400 Degree-Sign C). The nanophosphors were characterized by using powder X-ray diffraction (XRD), thermogravimetric analysis (TGA), atomic force microscopy (AFM) and spectrofluorometer techniques. XRD analysis reveals formation of pure cubic phase of Y{sub 2}O{sub 3} in samples annealed at 700 Degree-Sign C or above. Further, the XRD data was successfully used to retrieve the crystallite size and size distribution from powder samples using the FW((1/5)/(4/5))M method. Crystallite size (11-50 nm) extracted from XRD has been found to be consistent with AFM measurements. The PL emission spectra of nanophosphors show bright red emission at 612 nm due to hypersensitive electric dipole (ED) {sup 5}D{sub 0}-{sup 7}F{sub 2} transition of Eu{sup 3+} ions in Y{sub 2}O{sub 3} lattice. Further, photoluminescence studies indicate that optimum value of the Eu{sup 3+} to get best luminescence properties is 12 at%. Surface conjugations of these nanophosphors with water soluble dextran biomolecules have also been performed. Surface conjugated rare earth nanophosphors have great potential for bio-applications. - Highlights: Black-Right-Pointing-Pointer Surfactant and catalyst free synthesis of Eu{sup 3+} doped Y{sub 2}O{sub 3} nanophosphor showing bright red emission at 612 nm. Black-Right-Pointing-Pointer Optimization of reaction conditions and Eu{sup 3+}dopant concentration to achieve high luminescence efficiency. Black-Right-Pointing-Pointer Estimation of crystallite size and size distribution of nanophosphor from XRD data. Black-Right-Pointing-Pointer Surface conjugation of Eu{sup 3+} doped Y{sub 2}O{sub 3} nanophosphor with dextran biomolecules.

  17. Study on electrical properties of Ni-doped SrTiO3 ceramics using ...

    Indian Academy of Sciences (India)

    Unknown

    concentration of acceptor doping. Fine-grained ST cera- mics are desirable for higher GB resistivity. References. Daniels J, Hardl K H and Wernicke R 1978 Philips Tech. Rev. 38 73. Denk J, Claus J and Maier J 1997 J. Electrochem. Soc. 144 3526. Dedyk A I, Karmanenko S F, Leppavuori S and Sakharov V I. 1998 J. Phys.

  18. Effect of vanadium and yttrium doping on BSCCO superconductors

    International Nuclear Information System (INIS)

    Mohamed, S.B.; Halim, S.A.; Azhan, H.; Sidek, H.A.A; Tee, T.W.; Hassan, Z.A.

    1999-01-01

    The effect of vanadium and yttrium doping on the superconductivity is investigated. The doping was done on the calcium site ranging from x=0.00-0.10. The temperature dependence of electrical resistance and AC susceptibility measurements were made on these samples. The zero resistance for vanadium doped samples varied from 107 K (x = 0.00) to 68.5K (x = 0.10), whereas for yttrium doped samples it varied from 107 K (x = 0.00) to 54K (x 0.10). The volume fraction of the 2223 phase for both dopalit decreases witli increasing doping concentration. The nature of the temperature derivative of the resistance curves indicates the presence of a superconducting transition between grains coupled by weak links. The AC susceptibility data show enrichment of the volume fraction of the low Tc phase at higher compositions. The presence of low Tc phase (∼70 K) is visible in the susceptibility data. X-ray diffraction confirms the presence of mixed phases in the samples. (author)

  19. Neutron transmutation doping of polycrystalline silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

    1976-04-01

    Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 10 15 cm -3 . Radiation damage annealing to 800 0 C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed

  20. The growth of hydroxyapatite on alkaline treated Ti-6Al-4V soaking in higher temperature with concentrated Ca2+/HPO42- simulated body fluid

    International Nuclear Information System (INIS)

    Lin, F.-H.; Hsu, Y.-S.; Lin, S.-H.; Chen, T.-M.

    2004-01-01

    In this study, calcium and phosphorous ions in the simulated body fluid (SBF) was be increased to increase the rate of precipitation of hydroxyapatite (HA). The soaking temperature in concentrated calcium and phosphorous ion-SBF (CP-SBF) was increased to reduce the nucleation energy of the HA, which lead to an early precipitation to shorten the treatment process. When the metallic substrates treated with 10 M NaOH aqueous solution and subsequently heated at 600 deg. C, a thin sodium titanium oxide layer was formed on the surfaces as the linking layer for HA and Ti-6Al-4V alloys. After Ti-6Al-4V alloys treated with alkali solution, it would soak into a simulated body fluid with higher concentration of calcium and phosphorous ions (CP-SBF) to increase the possibility of nucleation of HA. When Ti-6Al-4V alloys treated with alkali solution, subsequently heated at 600 deg. C, and then soaked into CP-SBF at a temperature of 80 deg. C, it could form a dense and thick (50 μm) bone-like hydroxyapatite layer on the surface. The HA layer was appeared on the surface of the Ti-alloy at the first week soaking, which was greatly shorten the coating process. In the research, the characteristics of the coating layer will be analyzed by the results of X-ray diffractometer (XRD), scanning electron microscope (SEM), and Fourier transformation infrared (FT-IR)

  1. Synthesis, Characterization and Evaluation of the Cytotoxicity of Ni-Doped Zn(Se,S Quantum Dots

    Directory of Open Access Journals (Sweden)

    Melissa Cruz-Acuña

    2015-01-01

    Full Text Available Quantum dots (QDs are semiconductor nanocrystals with desirable optical properties for biological applications, such as bioimaging and drug delivery. However, the potential toxicity of these nanostructures in biological systems limits their application. The present work is focused on the synthesis, characterization, and evaluation of the toxicity of water-stable Ni-doped Zn(Se,S QDs. Also, the study of nondoped nanostructures was included for comparison purposes. Ni-doped nanostructures were produced from zinc chloride and selenide aqueous solutions in presence of 3-mercaptopropionic acid and Ni molar concentration of 0.001 M. In order to evaluate the potential cytoxicity of these doped nanostructures, human pancreatic carcinoma cells (PANC-1 were used as model. The cell viability was monitored in presence of Ni-doped Zn(Se,S QDs at concentrations ranging from 0 μg/mL to 500 μg/mL and light excited Ni-doped Zn(Se,S nanostructures were evaluated at 50 μg/mL. Results suggested that Ni-doped Zn(Se,S nanostructures were completely safe to PANC-1 when concentrations from 0 μg/mL to 500 μg/mL were used, whereas non-doped nanostructures evidenced toxicity at concentrations higher than 200 μg/mL. Also, Ni-doped Zn(Se,S QDs under light excitation do not evidence toxicity to PANC-1. These findings suggest strongly that Zn(Se,S nanostructures doped with nickel could be used in a safe manner in light-driving biological applications and drug delivery.

  2. Nanocrystal in Er3+-doped SiO2-ZrO2 Planar Waveguide with Yb3+ Sensitizer

    International Nuclear Information System (INIS)

    Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.

    2010-01-01

    Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .

  3. HOMO-LUMO analysis of multi walled carbon nanotubes doped Tetrafluoro Phthalate crystals for nonlinear optical applications

    Science.gov (United States)

    Latha, B.; Kumaresan, P.; Nithiyanantham, S.; Sampathkumar, K.

    2018-01-01

    The MWCNTs doped Tetrafluoro Phthalate (C6H2F4O4) precious stones are constantly having higher transmission rate contrasted with immaculate Tetrafluoro Phthalate crystal. The dependability of Tetrafluoro Phthalate crystal was enhanced by doping MWCNTs.The basic, synthetic, optical, mechanical and non-direct optical properties of the doped precious crystals were dissected with the portrayal concentrates, for example, powder XRD, FT-IR, UV-Visible, Hardness and SHG estimations individually. The dopants are relied upon to substitute the carbon iotas in the Tetrafluoro Phthalate grid because of their change of valency and in addition vicinity of ionic sweep. The strength and charge delocalization of the particle were additionally concentrated on by characteristic security orbital (NBO) examination. The HOMO-LUMO energies depict the charge exchange happens inside the atom. Atomic electrostatic potential has been dissected. The SHG productivity of the immaculate and colors doped TFP crystals were additionally contemplated utilizing Nd:YAG Q-exchanged laser.

  4. Dosimetric properties of dysprosium doped lithium borate glass irradiated by 6 MV photons

    International Nuclear Information System (INIS)

    Ab Rasid, A.; Wagiran, H.; Hashim, S.; Ibrahim, Z.; Ali, H.

    2015-01-01

    Undoped and dysprosium doped lithium borate glass system with empirical formula (70–x) B 2 O 3 –30 Li 2 O–(x) Dy 2 O 3 (x=0.1, 0.3, 0.5, 0.7, 1.0 mol%) were prepared using the melt-quenching technique. The dosimetric measurements were performed by irradiating the samples to 6 MV photon beam using linear accelerator (LINAC) over a dose range of 0.5–5.0 Gy. The glass series of dysprosium doped lithium borate glass produced the best thermoluminescence (TL) glow curve with the highest intensity peak from sample with 1.0 mol% Dy 2 O 3 concentration. Minimum detectable dose was detected at 2.24 mGy, good linearity of regression coefficient, high reproducibility and high sensitivity compared to the undoped glass are from 1.0 mol% dysprosium doped lithium borate glass. The results indicated that the series of dysprosium doped lithium glasses have a great potential to be considered as a thermoluminescence dosimetry (TLD). - Highlights: • TL response of undoped and dysprosium doped lithium borate glass subjected to 6 MV photons irradiation at low dose range. • TL linear response of dysprosium doped lithium borate glass. • The sensitivity of dysprosium doped lithium borate glass is approximately 93 times higher than undoped glass

  5. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    Science.gov (United States)

    Neogi, S. K.; Karmakar, R.; Misra, A. K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.

    2013-11-01

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn1-xMnxO samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol-gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV-visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO3) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ1 and τ2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. Single phase structure has been observed up to 6 at% of Mn doping. Impurity phase has been developed above 6 at% of Mn doping. Antiferromagnetic and paramagnetic interactions are present in the samples. Defect parameters show sharp fall as Mn concentration above 6 at%. The magnetic and defect properties are modified by the formation of impurity phase.

  6. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    International Nuclear Information System (INIS)

    Neogi, S.K.; Karmakar, R.; Misra, A.K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.

    2013-01-01

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn 1−x Mn x O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO 3 ) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ 1 and τ 2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase

  7. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    Energy Technology Data Exchange (ETDEWEB)

    Neogi, S.K.; Karmakar, R. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Misra, A.K. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India); Das, D. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India)

    2013-11-15

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn{sub 1−x}Mn{sub x}O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO{sub 3}) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ{sub 1} and τ{sub 2} are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase.

  8. Different Levels in Orexin Concentrations and Risk Factors Associated with Higher Orexin Levels: Comparison between Detoxified Opiate and Methamphetamine Addicts in 5 Chinese Cities

    Directory of Open Access Journals (Sweden)

    Haoran Zhang

    2013-01-01

    Full Text Available This study sought to explore the degree of orexin levels in Chinese opiate and methamphetamine addicts and the differences between them. The cross-sectional study was conducted among detoxified drug addicts from Mandatory Detoxification Center (MDC in five Chinese cities. Orexin levels were assayed with radioimmunoassay (RIA. Mann-Whitney U test and Kruskal-Wallis test were used to detect differences across groups, and logistic regression was used to explore the association between orexin levels and characteristics of demographic and drug abuse. Between November 2009 and January 2011, 285 opiates addicts, 112 methamphetamine addicts, and 79 healthy controls were enrolled. At drug withdrawal period, both opiate and methamphetamine addicts had lower median orexin levels than controls, and median orexin levels in opiate addicts were higher than those in methamphetamine addicts (all above P<0.05. Adjusted odds of the above median concentration of orexin were higher for injection than “chasing the dragon” (AOR = 3.1, 95% CI = 1.2–7.9. No significant factors associated with orexin levels of methamphetamine addicts were found. Development of intervention method on orexin system by different administration routes especially for injected opiate addicts at detoxification phase may be significant and was welcome.

  9. A comparative study of the magnetization in transition metal ion doped CeO2, TiO2 and SnO2 nanoparticles

    Science.gov (United States)

    Apostolov, A. T.; Apostolova, I. N.; Wesselinowa, J. M.

    2018-05-01

    Using the microscopic s-d model taking into account anharmonic spin-phonon interactions we have studied the magnetic properties of Co and Cu ion doped CeO2 and TiO2 nanoparticles and compared them with those of SnO2. By Co-doping there is a maximum in the magnetization M(x) curve for all nanoparticles observed in the most transition metal doped ones. The s-d interaction plays an important role by the decrease of M at higher dopant concentration. We have discussed the magnetization in dependence of different model parameters. By small Cu-ion doping there are some differences. In CeO2M decreases with the Cu-concentration, whereas in TiO2 and SnO2M increases. For higher Cu dopant concentrations M(X) decreases in TiO2 nanoparticles. We obtain room temperature ferromagnetism also in Zn doped CeO2, TiO2 and SnO2 nanoparticles, i.e. in non-transition metal ion doped ones. The different behavior of M in Co and Cu doped nanoparticles is due to a combination effect of multivalent metal ions, oxygen vacancies, different radius of cation dopants, connection between lattice and magnetism, as well as competition between the s-d and d-d ferromagnetic or antiferromagnetic interactions.

  10. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis

    International Nuclear Information System (INIS)

    Hartner, Sonja; Schulz, Christof; Wiggers, Hartmut; Ali, Moazzam; Winterer, Markus

    2009-01-01

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  11. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis.

    Science.gov (United States)

    Hartner, Sonja; Ali, Moazzam; Schulz, Christof; Winterer, Markus; Wiggers, Hartmut

    2009-11-04

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  12. Low Concentration Fe-Doped Alumina Catalysts Using Sol-Gel and Impregnation Methods: The Synthesis, Characterization and Catalytic Performance during the Combustion of Trichloroethylene

    Directory of Open Access Journals (Sweden)

    Carolina Solis Maldonado

    2014-03-01

    Full Text Available The role of iron in two modes of integration into alumina catalysts was studied at 0.39 wt% Fe and tested in trichloroethylene combustion. One modified alumina was synthesized using the sol-gel method with Fe added in situ during hydrolysis; another modification was performed using calcined alumina, prepared using the sol-gel method and impregnated with Fe. Several characterization techniques were used to study the level of Fe modification in the γ-Al2O3 phase formed and to correlate the catalytic properties during trichloroethylene (TCE combustion. The introduction of Fe in situ during the sol-gel process influenced the crystallite size, and three iron species were generated, namely, magnetite, maghemite and hematite. The impregnated Fe-alumina formed hematite and maghemite, which were highly dispersed on the γ-Al2O3 surface. The X-ray photoelectron spectra (XPS, FT-IR and Mössbauer spectroscopy analyses revealed how Fe interacted with the γ-Al2O3 lattice in both catalysts. The impregnated Fe-catalyst showed the best catalytic performance compared to the catalyst that was Fe-doped in situ by the sol-gel method; both had better catalytic activity than pure alumina. This difference in activity was correlated with the accessibility of the reactants to the hematite iron species on the surface. The chlorine poisoning for all three catalysts was less than 1.8%.

  13. Low Concentration Fe-Doped Alumina Catalysts Using Sol-Gel and Impregnation Methods: The Synthesis, Characterization and Catalytic Performance during the Combustion of Trichloroethylene.

    Science.gov (United States)

    Maldonado, Carolina Solis; De la Rosa, Javier Rivera; Lucio-Ortiz, Carlos J; Hernández-Ramírez, Aracely; Barraza, Felipe F Castillón; Valente, Jaime S

    2014-03-12

    The role of iron in two modes of integration into alumina catalysts was studied at 0.39 wt% Fe and tested in trichloroethylene combustion. One modified alumina was synthesized using the sol-gel method with Fe added in situ during hydrolysis; another modification was performed using calcined alumina, prepared using the sol-gel method and impregnated with Fe. Several characterization techniques were used to study the level of Fe modification in the γ-Al₂O₃ phase formed and to correlate the catalytic properties during trichloroethylene (TCE) combustion. The introduction of Fe in situ during the sol-gel process influenced the crystallite size, and three iron species were generated, namely, magnetite, maghemite and hematite. The impregnated Fe-alumina formed hematite and maghemite, which were highly dispersed on the γ-Al₂O 3 surface. The X-ray photoelectron spectra (XPS), FT-IR and Mössbauer spectroscopy analyses revealed how Fe interacted with the γ-Al₂O₃ lattice in both catalysts. The impregnated Fe-catalyst showed the best catalytic performance compared to the catalyst that was Fe-doped in situ by the sol-gel method; both had better catalytic activity than pure alumina. This difference in activity was correlated with the accessibility of the reactants to the hematite iron species on the surface. The chlorine poisoning for all three catalysts was less than 1.8%.

  14. Properties of fluorine and tin co-doped ZnO thin films deposited by sol–gel method

    International Nuclear Information System (INIS)

    Pan, Zhanchang; Zhang, Pengwei; Tian, Xinlong; Cheng, Guo; Xie, Yinghao; Zhang, Huangchu; Zeng, Xiangfu; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

    2013-01-01

    Highlights: •F and Sn co-doped ZnO thin films were synthesized by sol–gel method. •The effects of different F doping concentrations were investigated. •The co-doped nanocrystals exhibit good crystal quality. •The origin of the photoluminescence emissions was discussed. •The films showed high transmittance and low resistivity. -- Abstract: Highly transparent and conducting fluorine (F) and tin (Sn) co-doped ZnO (FTZO) thin films were deposited on glass substrates by the sol–gel processing. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) with various F doping concentrations. SEM images showed that the hexagonal ZnO crystals were well-arranged on the glass substrates and the HRTEM images indicated that the individual nanocrystals are highly oriented and exhibited a perfect lattice structure. Owing to its high carrier concentration and mobility, as well as good crystal quality, a minimum resistivity of 1 × 10 −3 Ω cm was obtained from the FTZO thin film with 3% F doping, and the average optical transmittance in the entire visible wavelength region was higher than 90%. The X-ray photoelectron spectroscopy (XPS) study confirmed the substitution of Zn 2+ by Sn ions and Room temperature photoluminescence (PL) observed for pure and FTZO thin films suggested the films exhibit a good crystallinity with a very low defect concentration

  15. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

    International Nuclear Information System (INIS)

    Tao Zhikuo; Zhang Rong; Xiu Xiangqian; Cui Xugao; Li Xin; Xie Zili; Zheng Youdou; Li Li; Zheng Rongkun; Ringer, Simon P

    2012-01-01

    We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3 N clusters are observed with Fe 3 N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn 6 N 2.58 phases are observed with Mn 6 N 2.58 (0002) parallel to GaN(0002). In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN(0002) planes. The magnetization of the Fe over-doped GaN sample is increased, which is ascribed to the participation of ferromagnetic iron and Fe 3 N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn 6 N 2.58 . (semiconductor materials)

  16. Facile microwave-assisted synthesis of Te-doped hydroxyapatite nanorods and nanosheets and their characterizations for bone cement applications

    Energy Technology Data Exchange (ETDEWEB)

    Yahia, I.S. [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Shkir, Mohd, E-mail: shkirphysics@gmail.com [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); AlFaify, S.; Ganesh, V. [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Zahran, H.Y. [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Kilany, Mona [Department of Biology, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Department of Microbiology, National Organization for Drug Control and Research (NODCAR), Cairo (Egypt)

    2017-03-01

    In this work, the authors have fabricated the nanorods and nanosheets of pure and Te-doped HAp with different Te concentrations (0.04, 0.08, 0.16, 0.24 wt%) by microwave-assisted technique at low temperature. The crystallite size, degree of crystallinity and lattice parameters are calculated. FE-SEM study confirms that the fabricated nanostructures are nanorods of diameter about 10 nm in undoped and at low concentration of Te doping. However, at and higher concentration, it becomes nanosheets of about 5 nm thickness. X-ray diffraction, FT-IR and FT-Raman studies shows that the prepared products are of HAp and Te has been successfully incorporated. From EDX the Ca/P molar ratio of the pure HAp is about 1.740, while this ratio for 0.04, 0.08, 0.16, 0.24 wt% Te doped is about 1.53, 1.678, 1.724, 1.792, respectively. Crystallite size was found to be increased with Te doping from 15 nm to 62 nm. The value of dielectric constant is found to be enhanced at higher concentrations of Te. The values of linear absorption coefficient were also determined and show that the prepared material with Te doping is more absorbable than pure and will be highly applicable in radiation detection applications. Furthermore, the antimicrobial potential of pure and Te doped HAp was examined against some Gram- negative and positive bacteria and fungi by agar disk diffusion method. The results demonstrated that the antimicrobial activity of Te doped HAp is stronger than that of pure HAp where it exhibited the highest activity against Bacillus subtilis > Candida albicans > Shigella dysenteriae. - Highlights: • The crystallinity was found to be enhanced and so the crystal size with Te doping. • The enhancement in the relative permittivity was observed at some concentrations. • The linear absorption coefficient was found to be enhanced by Te doping. • Te doped HAp may be used for radiation shielding applications in medical. • The antimicrobial activity was found to be enhanced with Te

  17. Facile microwave-assisted synthesis of Te-doped hydroxyapatite nanorods and nanosheets and their characterizations for bone cement applications

    International Nuclear Information System (INIS)

    Yahia, I.S.; Shkir, Mohd; AlFaify, S.; Ganesh, V.; Zahran, H.Y.; Kilany, Mona

    2017-01-01

    In this work, the authors have fabricated the nanorods and nanosheets of pure and Te-doped HAp with different Te concentrations (0.04, 0.08, 0.16, 0.24 wt%) by microwave-assisted technique at low temperature. The crystallite size, degree of crystallinity and lattice parameters are calculated. FE-SEM study confirms that the fabricated nanostructures are nanorods of diameter about 10 nm in undoped and at low concentration of Te doping. However, at and higher concentration, it becomes nanosheets of about 5 nm thickness. X-ray diffraction, FT-IR and FT-Raman studies shows that the prepared products are of HAp and Te has been successfully incorporated. From EDX the Ca/P molar ratio of the pure HAp is about 1.740, while this ratio for 0.04, 0.08, 0.16, 0.24 wt% Te doped is about 1.53, 1.678, 1.724, 1.792, respectively. Crystallite size was found to be increased with Te doping from 15 nm to 62 nm. The value of dielectric constant is found to be enhanced at higher concentrations of Te. The values of linear absorption coefficient were also determined and show that the prepared material with Te doping is more absorbable than pure and will be highly applicable in radiation detection applications. Furthermore, the antimicrobial potential of pure and Te doped HAp was examined against some Gram- negative and positive bacteria and fungi by agar disk diffusion method. The results demonstrated that the antimicrobial activity of Te doped HAp is stronger than that of pure HAp where it exhibited the highest activity against Bacillus subtilis > Candida albicans > Shigella dysenteriae. - Highlights: • The crystallinity was found to be enhanced and so the crystal size with Te doping. • The enhancement in the relative permittivity was observed at some concentrations. • The linear absorption coefficient was found to be enhanced by Te doping. • Te doped HAp may be used for radiation shielding applications in medical. • The antimicrobial activity was found to be enhanced with Te

  18. Impact of incoherent pumping field and Er3+ ion concentration on group velocity and index of refraction in an Er3+-doped YAG crystal

    International Nuclear Information System (INIS)

    Jafarzadeh, Hossein; Asadpour, Seyyed Hossein; Soleimani, H Rahimpour

    2015-01-01

    The effect of Er 3+ ion concentration and incoherent pumping field on the refractive index and group index in an Er 3+ : YAG crystal is investigated. It is shown that under different concentrations of Er 3+ ion in the crystal, the index of refraction and absorption can be changed and a high index of refraction is accompanied by amplification in the medium. Also, it is shown that with the switching from subluminal to superluminal, or vice versa, light propagation can be obtained by different concentrations of Er 3+ ions in the crystal. (paper)

  19. Rare-earth-doped fluorozirconate fiber lasers

    International Nuclear Information System (INIS)

    Brierly, M.C.; France, P.W.; Moore, M.W.; Davey, S.T.

    1988-01-01

    Rare-earth-doped fiber lasers fabricated using silica-based fibers are rapidly becoming an established technology. Simultaneously, in the search for lower losses to achieve longer repeaterless communications links, another fiber technology based on fluorozirconate glasses is emerging. Fluorozirconate glass systems are known to be suitable laser hosts, and the authors have already reported Nd-doped fiber lasers using this technology. Recently the authors have used a 0.5-m length of 44-μm core fluorozirconate fiber doped with 1000 ppm of Nd 3+ ions in a longitudinally pumped Fabry-Perot cavity with a 90% output coupler. They observed lasing at 1.05 μm with a threshold of 33-mW launched power at 514 nm and a slope efficiency of 16.8%. The authors attribute this improvement to the higher dopant concentration, better fiber to mirror coupling, and more optimum output coupler reflectivity. In addition the same fiber used with two high-reflector mirrors at 1.35μm produced lasing at 1.35μm with a threshold of 60-mW launched power

  20. Radiative recombination in doped indium phosphide crystals

    International Nuclear Information System (INIS)

    Negreskul, V.V.; Russu, E.V.; Radautsan, S.I.; Cheban, A.G.; AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki)

    1975-01-01

    Photoluminiscence spectra of nondoped n-InP and their change upon doping with silicon, cadmium, zinc and copper impurities were studied. The shortest wave band at 1.41 eV is connected with radiative electron transition from a shallow donor level (probably silicon) to valent zone, while the band with maximum at 1.37 - 1.39 eV is due to radiative electron transition to an acceptor level whose energy depends upon the nature and concentration of impurity implanted. The luminescence of Light-doped p-InP crystals enables to estimate the ionization energies of acceptor levels in cadmium (Esub(a)=0.043 eV) and zinc (Esub(a)=0.027 eV). Energies of acceptor levels (0.22 and 0.40 eV) due to copper impurity are determined. Intensity of edge emission in the specimens light-doped with silicon is higher than in the nondoped n-InP crystals

  1. Synergistic effect of non-covalent interaction in colloidal nematic liquid crystal doped with magnetic functionalized single-walled carbon nanotubes

    Science.gov (United States)

    Dalir, Nima; Javadian, Soheila

    2018-03-01

    Single-walled carbon nanotubes (SWCNTs), CNT@Fe3O4, and Fe3O4 nanocomposites were doped to eutectic uniaxial nematic liquid crystal (NLC's) (E5CN7) to improve physiochemical properties such as phase transition temperature, activation energy (Ea), dielectric anisotropy, and electro-optical properties. The thermal study of nematic phase shows a decrease in the nematic to isotropic phase transition temperature as CNT is doped. However, higher doping concentration of CNTs leads to the further increase in transition temperature. The anchoring effect or π-π interaction plays a key role in N-I phase transition. The functionalization of SWCNTs with Fe3O4 diminishes the CNT aggregation while the magnetic susceptibility is increased. The functionalized CNT doping to NLC's decrease significantly the phase transition temperature compared to doping of non-functionalized CNTs. Attractive interaction between guest and host molecules by magnetic and geometry effect increased the enthalpy and entropy of phase transition in the SWCNT@Fe3O4 sample compared to non-functionalized CNT doped system. Also, the Ea values are decreased as SWCNT@Fe3O4 is doped to pure E5CN7. The difference of N-I phase transition temperature was observed in Fe3O4 and CNT@Fe3O4 compared to SWCNT doped systems. Finally, dielectric anisotropy was increased in the doped system compared to pure NLC.

  2. The effect of strontium doping on structural and morphological properties of ZnO nanofilms synthesized by ultrasonic spray pyrolysis method

    Directory of Open Access Journals (Sweden)

    A. Ouhaibi

    2018-03-01

    Full Text Available Pristine and strontium doped ZnO nanometric films were successfully synthesized on heated glass substrates by the ultrasonic spray pyrolysis technique. The samples were characterized by means of X-ray diffraction (XRD, Atomic Force Microscope (AFM, UV–visible spectroscopy and photoluminescence (PL. X-ray diffraction patterns confirmed the hexagonal (wurtzite structure, where the most pronounced (002 peak indicates the preferential orientation along the c-axis perpendicular to the sample surface. The intensity of this peak was increased rapidly from the first doping of 1% and its position was shifted toward higher angles under Sr-doping effect. For the used doping range of 1–5%, the Sr-doping at 3% attracted an especial attention. At this concentration, the particular transformation in the surface morphology of doped ZnO films was observed. The surface became granular and rough by expanding the crystallites' size. From optical measurements, transmittance and PL spectra were found to be sensitive to Sr-doping, where two different behaviors were observed before and after 3% of Sr-doping. Keywords: Ultrasonic spray pyrolysis, Sr-doped ZnO, Morphology study, Optical properties

  3. Higher Urinary Heavy Metal, Phthalate, and Arsenic but Not Parabens Concentrations in People with High Blood Pressure, U.S. NHANES, 2011–2012

    Directory of Open Access Journals (Sweden)

    Ivy Shiue

    2014-06-01

    Full Text Available Link between environmental chemicals and human health has emerged but not been completely examined in risk factors. Therefore, it was aimed to study the relationships of different sets of urinary environmental chemical concentrations and risk of high blood pressure (BP in a national, population-based study. Data were retrieved from United States National Health and Nutrition Examination Surveys, 2011–2012 including demographics, BP readings, and urinary environmental chemical concentrations. Analyses included chi-square test, t-test and survey-weighted logistic regression modeling. After full adjustment (adjusting for urinary creatinine, age, sex, ethnicity, and body mass index, urinary cesium (OR 1.56, 95%CI 1.11–2.20, P = 0.014, molybden (OR 1.46, 95%CI 1.06–2.01, P = 0.023, manganese (OR 1.42, 95%CI 1.09–1.86, P = 0.012, lead (OR 1.58, 95%CI 1.28–1.96, P < 0.001, tin (OR 1.44, 95%CI 1.25–1.66, P < 0.001, antimony (OR 1.39, 95%CI 1.10–1.77, P = 0.010, and tungsten (OR 1.49, 95%CI 1.25–1.77, P < 0.001 concentrations were observed to be associated with high BP. People with higher urinary mono-2-ethyl-5-carboxypentyl phthalate (OR 1.33, 95%CI 1.00–1.62, P = 0.006, mono-n-butyl phthalate (OR 1.35, 95%CI 1.13–1.62, P = 0.002, mono-2-ethyl-5-hydroxyhexyl (OR 1.25, 95%CI 1.05–1.49, P = 0.014, mono-n-methyl phthalate (OR 1.26, 95%CI 1.07–1.48, P = 0.007, mono-2-ethyl-5-oxohexyl (OR 1.25, 95%CI 1.07–1.48, P = 0.009, and monobenzyl phthalate (OR 1.40, 95%CI 1.15–1.69, P = 0.002 tended to have high BP as well. However, there are no clear associations between environmental parabens and high BP, nor between pesticides and high BP. In addition, trimethylarsine oxide (OR 2.47, 95%CI 1.27–4.81, P = 0.011 and dimethylarsonic acid concentrations (OR 1.42, 95%CI 1.12–1.79, P = 0.006 were seen to be associated with high BP. In sum, urinary heavy metal, phthalate, and arsenic concentrations were associated with high BP, although the

  4. Distribution of caffeine levels in urine in different sports in relation to doping control before and after the removal of caffeine from the WADA doping list.

    Science.gov (United States)

    Van Thuyne, W; Delbeke, F T

    2006-09-01

    Caffeine concentrations were measured in the urine of 4633 athletes tested for doping control in the Ghent Doping Control Laboratory in 2004. Determination of these concentrations was done using an alkaline extraction with a mixture of dichloromethane and methanol (9 : 1; v/v) followed by high performance liquid chromatography and ultraviolet detection (HPLC-UV). The method was validated according to ISO 17 025 standards (International Organisation for Standardisation). Quantification was done by using a linear calibration curve in the range from 0 to 20 microg/ml. The limit of quantification (LOQ) was 0.10 microg/ml. Because the results were not normally distributed, transformation of the data was done to evaluate the difference in detected concentrations in several sports. This resulted in an overall average concentration of 1.12 +/- 2.68 microg/ml. Comparison of the most frequently tested sports in 2004 demonstrated that caffeine concentrations in samples originating from power lifters are significantly higher in comparison to urines taken in other sports. Also, a significant difference between caffeine concentrations found in cycling and concentrations found in other sports, including athletics and some ball sports, was observed. A comparison was made between results obtained in 2004 and results obtained before the removal of caffeine from the WADA (World Anti-Doping Agency) doping list indicating that average caffeine concentrations decreased after the withdrawal of caffeine from the list of prohibited substances. The overall percentage of positive samples between the two periods remained the same although the percentage of positive samples noticed in cycling increased after the removal of caffeine from the doping list.

  5. Quantitative analysis of manganese concentration in manganese-doped glasses by laser-induced breakdown spectroscopy using a nanosecond ultraviolet Nd:YAG laser

    International Nuclear Information System (INIS)

    Unnikrishnan, V.K.; Nayak, Rajesh; Kartha, V.B.; Santhosh, C.; Sonavane, M.S.; Yeotikar, R.G.; Gupta, G.P.; Suri, B.M.

    2012-01-01

    Laser-induced breakdown spectroscopy (LIBS) has been well recognized as a simple, fast and direct analytical technique for the analysis of elemental analysis of multi-element materials by a number of research groups all over the world. It is based on the focusing of a high-power pulsed laser beam with a power density > 100 MW/cm 2 onto a sample surface followed by optical emission spectroscopy of the plasma produced over the surface. During the last two decades, LIBS has attracted a lot of attention, leading to an ever increasing list of applications, both in laboratory and in industry. In this work, the quantitative analysis of manganese in manganese-doped glass samples in air at atmospheric pressure has been carried out by the LIBS system assembled and optimized in the laboratory. The plasma is generated using a nanosecond ultraviolet Nd:YAG laser with an irradiance of 1x10 9 W/cm 2 on the sample surface. The spatially integrated plasma light emission was collected and imaged on to the spectrograph slit using an optical-fibre-based collection system. An Echelle spectrograph-ICCD system (Andor Mechelle ME5000-DH734-18U-03PS150) was used to record the emission spectrum. The spectrograph with an Echelle grating covers 200-975 nm spectral range in a single shot with a good wavelength resolution (0.05 nm). The detector was gated in synchronization with the laser pulse to get maximum signal-to-background (S/B) ratio. The detector gate width of 2 μs and the detector gate delay of 2 μs were chosen for recording the plasma emission signals, discriminating the continuum radiation which is intense at initial delay time less than 300 ns and decreases at later time

  6. On compensation in Si-doped AlN

    Science.gov (United States)

    Harris, Joshua S.; Baker, Jonathon N.; Gaddy, Benjamin E.; Bryan, Isaac; Bryan, Zachary; Mirrielees, Kelsey J.; Reddy, Pramod; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.

    2018-04-01

    Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+n SiAl complexes as central to mechanistically understanding compensation in the high Si limit in AlN, while secondary impurities and vacancies tend to dominate compensation in the low Si limit. The formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content. The results were found to qualitatively reproduce the experimentally observed compensation knee. Furthermore, these calculations predict a shift in the optical emissions present in the high and low doping limits, which is confirmed with detailed photoluminescence measurements.

  7. A dynamic model for the nitrification of higher concentrated wastewaters and control by experiments; Ein dynamisches Prozessmodell fuer die Nitrifikation hoeher belasteter Abwaesser und praktische Anwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Pirsing, A. [Siemens AG, Anlagentechnik ANL A73, Karlsruhe (Germany); Wiesmann, U. [Inst. fuer Verfahrenstechnik, Technische Univ. Berlin (Germany)

    1995-07-01

    Wastewater with high ammonia concentration is produced by many industries. However, the removal of higher loaded industrial effluents still poses many questions. Dynamic modelling is helpful to understand the process of nitrification and to investigate algorithms of process control. Therefore, a dynamic model of nitrification in completely mixed reactors is proposed based on mass balances for the components ammonia, nitrite, nitrate, dissolved oxygen, carbon dioxide, pH, nitrosomonas and nitrobacter. The biological reaction rates consider oxygen limitation and substrate inhibition. The process model presented it tested by lab scale experiments using an aerated stirred tank reactor. (orig.) [Deutsch] Es wird ein mathematisches Prozessmodell fuer die Nitrifikation von Industrieabwaessern mit hoher Ammoniumkonzentration vorgestellt, das bislang vernachlaessigte Phaenomene wie z.B. Substratueberschusshemmung und Sauerstofflimitierung beruecksichtigt. Als theoretische Grundlage dienen Bilanzgleichungen fuer insgesamt acht Komponenten. Das Simulationsmodell wird durch den Vergleich mit experimentellen Ergebnissen aus einer Laborversuchsanlage auf seine Richtigkeit ueberprueft. In dem Beitrag werden auf diesem Modell basierende Anwendungsbeispiele behandelt. So werden die Moeglichkeiten der dynamischen Prozesssimulation zur Steigerung der Betriebsstabilitaet bei schwankenden Zulaufkonzentrationen und -volumenstroemen gezeigt. Darueber hinaus gelingt die Rekonstruktion der Umsatzraten r(O{sub 2}) und r(NH{sub 3}) aus der Sauerstoff- und Kohlendioxidkonzentration in der Abluft. (orig.)

  8. Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

    International Nuclear Information System (INIS)

    Rahman, Airul Azha Abd; Umar, Akrajas Ali; Salleh, Muhamad Mat; Chen, Xiaomei; Oyama, Munetaka

    2016-01-01

    The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m -1 K -2 ) and 10 μV/K (and 19.5 μW m -1 K -2 ), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50

  9. Gene doping.

    Science.gov (United States)

    Haisma, H J; de Hon, O

    2006-04-01

    Together with the rapidly increasing knowledge on genetic therapies as a promising new branch of regular medicine, the issue has arisen whether these techniques might be abused in the field of sports. Previous experiences have shown that drugs that are still in the experimental phases of research may find their way into the athletic world. Both the World Anti-Doping Agency (WADA) and the International Olympic Committee (IOC) have expressed concerns about this possibility. As a result, the method of gene doping has been included in the list of prohibited classes of substances and prohibited methods. This review addresses the possible ways in which knowledge gained in the field of genetic therapies may be misused in elite sports. Many genes are readily available which may potentially have an effect on athletic performance. The sporting world will eventually be faced with the phenomena of gene doping to improve athletic performance. A combination of developing detection methods based on gene arrays or proteomics and a clear education program on the associated risks seems to be the most promising preventive method to counteract the possible application of gene doping.

  10. Dielectric response and room temperature ferromagnetism in Cr doped anatase TiO2 nanoparticles

    Science.gov (United States)

    Naseem, Swaleha; Khan, Wasi; Khan, Shakeel; Husain, Shahid; Ahmad, Abid

    2018-02-01

    In the present work, nanocrystalline samples of Ti1-xCrxO2 (x = 0, 0.02, 0.04, 0.06 and 0.08) were synthesized in anatase phase through simple and cost effective acid modified sol gel method. The influence of Cr doping on thermal, microstructural, electrical and magnetic properties was investigated in TiO2 host matrix. The surface morphology has revealed less agglomeration and considerable reduction in particle size in case of Cr doped TiO2 as compared to undoped TiO2 nanoparticles (NPs). Energy dispersive x-ray spectroscopy (EDS), Raman and X-ray photoelectron spectroscopy (XPS) established high purity, appropriate stoichiometry and oxidation states of the compositions. The dielectric properties of the nanoparticles were altered by the doping concentration, applied frequency as well as temperature variation. The variation in dielectric constant (ε‧), dielectric loss (δ) and ac conductivity as a function of frequency and temperature at different doping concentration of Cr were interpreted in the light of Maxwell Wagner theory, space charge polarization mechanism and drift mobility of charge carriers. Both undoped and Cr doped TiO2 samples exhibit room temperature ferromagnetism (RTFM) that remarkably influenced by means of the Cr content. The significant enhancement in the magnetization was observed at 4% Cr doping. However, decrease in magnetization for higher doping signify antiferromagnetic interactions between Cr ions or superexchange mechanism. These results reveal that the oxygen vacancies play a crucial role to initiate the RTFM. Therefore, the present investigation suggests the potential applications of Cr doped TiO2 nanoparticles for spintronics application.

  11. Enhanced thermoelectric property of oxygen deficient nickel doped SnO2 for high temperature application

    Science.gov (United States)

    Paulson, Anju; Sabeer, N. A. Muhammad; Pradyumnan, P. P.

    2018-04-01

    Motivated by the detailed investigation on the thermoelectric performance of oxide materials our work concentrated on the influence of acceptor dopants and defect density in the lattice plane for the enhancement of thermoelectric power. The series of Sn1‑x Nix O2 (0.01 ≤ x ≤ 0.05) compositions were prepared by solid state reaction mechanism and found that 3 atomic percentage Ni doped SnO2 can be considered as a good candidate due to its promising electrical and transport properties. Defect lattices were introduced in the sample and the deviation from oxygen stochiometry was ensured using photoluminescence measurement. High power factor was obtained for the 3 atomic percentage nickel doped SnO2 due to the effective number of charge carrier concentration and the depletion of oxygen rich layers. Defect centered and acceptor doped SnO2 lattice opens a new door for energy harvesting at higher temperatures.

  12. Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

    International Nuclear Information System (INIS)

    Lotfi, E; Rezania, H; Arghavaninia, B; Yarmohammadi, M

    2016-01-01

    We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength. (paper)

  13. Long Distance Enhancement of Nonlinear Optical Properties Using Low Concentration of Plasmonic Nanostructures in Dye Doped Monolithic SolGel Materials (Postprint)

    Science.gov (United States)

    2016-05-31

    Incorporation of effi cient nonlinear dyes into a solid matrix at high concentration is a real challenge. This has been achieved through the sol...NIR Lambda 750 spectrometer. The nonlinear absorption measurements at 532 and 600 nm were made with the same method and on the same occasion as for

  14. Effect of structure, particle size and relative concentration of Eu3+ and Tb3+ ions on the luminescence properties of Eu3+ co-doped Y2O3:Tb nanoparticles

    International Nuclear Information System (INIS)

    Mukherjee, S; Sudarsan, V; Vatsa, R K; Tyagi, A K; Godbole, S V; Kadam, R M; Bhatta, U M

    2008-01-01

    Eu 3+ co-doped Y 2 O 3 :Tb nanoparticles were prepared by the combustion method and characterized for their structural and luminescence properties as a function of annealing temperatures and relative concentration of Eu 3+ and Tb 3+ ions. For Y 2 O 3 :Eu,Tb nanoparticles annealed at 600 and 1200 deg. C, variation in the relative intensity of excitation transitions between the 7 F 6 ground state and low spin and high spin 4f 7 5d 1 excited states of Tb 3+ is explained due to the combined effect of distortion around Y 3+ /Tb 3+ in YO 6 /TbO 6 polyhedra and the size of the nanoparticles. Increase in relative intensity of the 285 nm peak (spin-allowed transition denoted as peak B) with respect to the 310 nm peak (spin-forbidden transition denoted as peak A) with decrease of Tb 3+ concentration in the Y 2 O 3 :Eu,Tb nanoparticles heated at 1200 deg. C is explained based on two competing effects, namely energy transfer from Tb 3+ to Eu 3+ ions and quenching among the Tb 3+ ions. Back energy transfer from Tb 3+ to Eu 3+ in these nanoparticles is found to be very poor

  15. Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss

    Science.gov (United States)

    Korenev, V. V.; Savelyev, A. V.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Kulagina, M. M.; Zhukov, A. E.

    2017-09-01

    The influence of the modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied experimentally for devices having various external losses. It is shown that in the case of short cavities (high external loss), there is an increase in the lasing power component corresponding to the ground-state optical transitions of QDs as the p-doping level grows. However, in the case of long cavities (small external loss), higher dopant concentrations may have an opposite effect on the output power. Based on these observations, an optimal design of laser geometry and an optimal doping level are discussed.

  16. Upconversion luminescence, ferroelectrics and piezoelectrics of Er Doped SrBi{sub 4}Ti{sub 4}O{sub 15}

    Energy Technology Data Exchange (ETDEWEB)

    Peng Dengfeng [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China); National Institute of Advanced Industrial Science and Technology, Kyushu, 807-1 Shuku, Tosu, Saga 841-0052 (Japan); Zou Hua; Wang Xusheng; Yao Xi [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China); Xu Chaonan [National Institute of Advanced Industrial Science and Technology, Kyushu, 807-1 Shuku, Tosu, Saga 841-0052 (Japan); Lin Jian; Sun Tiantuo [School of Material Science and Engineering, Tongji University, 4800 Cao' an Highway, Shanghai 201804 (China)

    2012-12-15

    Er{sup 3+} doped SrBi{sub 4}Ti{sub 4}O{sub 15} (SBT) bismuth layered-structure ferroelectric ceramics were synthesized by the traditional solid-state method, and their upconversion photoluminescent (UC) properties were investigated as a function of Er{sup 3+} concentration and incident pump power. Green (555 nm) and red (670 nm) emission bands were obtained under 980 nm excitation at room temperature, which corresponded to the radiative transitions from {sup 4}S{sub 3/2}, and {sup 4}F{sub 9/2} to {sup 4}I{sub 15/2}, respectively. The emission color of the samples could be changed with moderating the doping concentrations. The dependence of UC intensity on pumping power indicated a two-photon emission process. Studies on dielectric properties indicated that the introduction of Er increased the ferroelectric-paraelectric phase transition temperature (Tc) of SBT, thus making this ceramic suitable for piezoelectric sensor applications at higher temperatures. Piezoelectric measurement showed that the doped SBT had a relative higher piezoelectric constant d{sub 33} compared with the non-doped ceramics. The thermal annealing behaviors of the doped sample revealed a stable piezoelectric property. The doped SBT showed bright UC emission while simultaneously having increased Tc and d{sub 33}. As a multifunctional material, Er doped SBT ferroelectric oxide showed great potential in application of sensor, future optical-electro integration and coupling devices.

  17. Doping phosphoric acid in polybenzimidazole membranes for high temperature proton exchange membrane fuel cells

    DEFF Research Database (Denmark)

    He, Ronghuan; Li, Qingfeng; Jensen, Jens Oluf

    2007-01-01

    Polybenzimidazole (PBI) membranes were doped in phosphoric acid solutions of different concentrations at room temperature. The doping chemistry was studied using the Scatchard method. The energy distribution of the acid complexation in polymer membranes is heterogeneous, that is, there are two...... different types of sites in PBI for the acid doping. The protonation constants of PBI by phosphoric acid are found to be 12.7 L mol(-1) (K-1) for acid complexing sites with higher affinity, and 0.19 L mol(-1) (K-2) for the sites with lower affinity. The dissociation constants for the complexing acid onto...... these two types of PBI sites are found to be 5.4 X 10(-4) and 3.6 X 10(-2), respectively, that is, about 10 times smaller than that of aqueous phosphoric acid in the first case but 5 times higher in the second. The proton conducting mechanism is also discussed....

  18. Pure and Sn-doped ZnO films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Holmelund, E.; Schou, Jørgen; Tougaard, S.

    2002-01-01

    A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

  19. Study of doping non-PMMA polymer fibre canes with UV photosensitive compounds

    DEFF Research Database (Denmark)

    Hassan, Hafeez Ul; Fasano, Andrea; Janting, Jakob

    2016-01-01

    and hollow-core TOPAS canes were doped with a solution of dopants in acetone/methanol and hexane/methanol, respectively. Doping time, solvent mixture concentration and doping temperature were optimised. A long and stepwise drying process was applied to the doped canes to ensure complete solvent removal...

  20. Microstructural and dielectrical characterization of Ho doped BaTiO3 ceramics

    Directory of Open Access Journals (Sweden)

    Marjanović Miloš

    2014-01-01

    Full Text Available The Ho doped BaTiO3 ceramics, with different Ho2O3 content, ranging from 0.01 to 1.0 wt % Ho, were investigated regarding their microstructural and dielectric characteristics. Doped BaTiO3 were prepared using conventional solid state reaction and sintered at 1380°C for four hours. SEM analysis of Ho/BaTiO3 doped ceramics showed that the low doped samples exhibit mainly fairly uniform and homogeneous microstructure with the grain size ranged from 20-40 μm. In the samples with the higher dopant concentration the abnormal grain growth is inhibited and the grain size ranged between 2-10 μm. Measurements of dielectric properties were carried out as a function of temperature up to 180 °C at different frequencies. The samples doped with 0.01wt % of Ho, exhibit the high value of dielectric permittivity (εr = 2160 at room temperature. A nearly flat permittivity-response was obtained in specimens with higher additive content. Using a Curie-Weiss law and modified Curie-Weiss law the Curie constant (C, Curie temperature (Tc and a critical exponent of nonlinearity (g were calculated. The Curie temperature of doped samples were ranged from 128 to 130°C. The Curie constant for all series of samples decrease with increase of dopant concentration and the lowest values were observed on samples doped with 0.01 wt % of holmium. [Projekat Ministarstva nauke Republike Srbije, br. OI 172057: Directed synthesis, structure and properties of multifunctional materials i br. TR 32026

  1. Corrosion and Wear Behaviors of Cr-Doped Diamond-Like Carbon Coatings

    Science.gov (United States)

    Viswanathan, S.; Mohan, L.; Bera, Parthasarathi; Kumar, V. Praveen; Barshilia, Harish C.; Anandan, C.

    2017-08-01

    A combination of plasma-enhanced chemical vapor deposition and magnetron sputtering techniques has been employed to deposit chromium-doped diamond-like carbon (DLC) coatings on stainless steel, silicon and glass substrates. The concentrations of Cr in the coatings are varied by changing the parameters of the bipolar pulsed power supply and the argon/acetylene gas composition. The coatings have been studied for composition, morphology, surface nature, nanohardness, corrosion resistance and wear resistance properties. The changes in I D / I G ratio with Cr concentrations have been obtained from Raman spectroscopy studies. Ratio decreases with an increase in Cr concentration, and it has been found to increase at higher Cr concentration, indicating the disorder in the coating. Carbide is formed in Cr-doped DLC coatings as observed from XPS studies. There is a decrease in sp 3/ sp 2 ratios with an increase in Cr concentration, and it increases again at higher Cr concentration. Nanohardness studies show no clear dependence of hardness on Cr concentration. DLC coatings with lower Cr contents have demonstrated better corrosion resistance with better passive behavior in 3.5% NaCl solution, and corrosion potential is observed to move toward nobler (more positive) values. A low coefficient of friction (0.15) at different loads is observed from reciprocating wear studies. Lower wear volume is found at all loads on the Cr-doped DLC coatings. Wear mechanism changes from abrasive wear on the substrate to adhesive wear on the coating.

  2. P-type doping of semipolar GaN(11 anti 22) by plasma-assisted molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Das, A.; Lahourcade, L. [Equipe Mixte CEA-CNRS, Nanophysique et Semiconducteurs, CEA-Grenoble, INAC/SP2M, Grenoble (France); Pernot, J. [Institut Neel, CNRS et Universite Joseph Fourier, Grenoble (France); Valdueza-Felip, S. [Equipe Mixte CEA-CNRS, Nanophysique et Semiconducteurs, CEA-Grenoble, INAC/SP2M, Grenoble (France); Dept. Electronica, Escuela Politecnica, Universidad de Alcala, Alcala de Henares, Madrid (Spain); Ruterana, P. [CIMAP, UMR6252, CNRS-ENSICAEN-CEA-UCBN, Caen (France); Laufer, A.; Eickhoff, M. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen (Germany); Monroy, E.

    2010-07-15

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(11-22) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(11-22). As a result, the growth widow is reduced for Mg doped layers, and we observe a certain deterioration of the surface morphology. In spite of this difficulties, homogenous Mg incorporation is achieved and layers display p -type conductivity for Mg atomic concentration higher than 7 x 10{sup 18} cm{sup -3}. Microscopy studies show no evidence of the pyramidal defects or polarity inversion domains found in Mg-doped GaN(0001). (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Facile microwave-assisted synthesis of Te-doped hydroxyapatite nanorods and nanosheets and their characterizations for bone cement applications.

    Science.gov (United States)

    Yahia, I S; Shkir, Mohd; AlFaify, S; Ganesh, V; Zahran, H Y; Kilany, Mona

    2017-03-01

    In this work, the authors have fabricated the nanorods and nanosheets of pure and Te-doped HAp with different Te concentrations (0.04, 0.08, 0.16, 0.24wt%) by microwave-assisted technique at low temperature. The crystallite size, degree of crystallinity and lattice parameters are calculated. FE-SEM study confirms that the fabricated nanostructures are nanorods of diameter about 10nm in undoped and at low concentration of Te doping. However, at and higher concentration, it becomes nanosheets of about 5nm thickness. X-ray diffraction, FT-IR and FT-Raman studies shows that the prepared products are of HAp and Te has been successfully incorporated. From EDX the Ca/P molar ratio of the pure HAp is about 1.740, while this ratio for 0.04, 0.08, 0.16, 0.24 wt% Te doped is about 1.53, 1.678, 1.724, 1.792, respectively. Crystallite size was found to be increased with Te doping from 15nm to 62nm. The value of dielectric constant is found to be enhanced at higher concentrations of Te. The values of linear absorption coefficient were also determined and show that the prepared material with Te doping is more absorbable than pure and will be highly applicable in radiation detection applications. Furthermore, the antimicrobial potential of pure and Te doped HAp was examined against some Gram- negative and positive bacteria and fungi by agar disk diffusion method. The results demonstrated that the antimicrobial activity of Te doped HAp is stronger than that of pure HAp where it exhibited the highest activity against Bacillus subtilis>Candida albicans>Shigella dysenteriae. Copyright © 2016 Elsevier B.V. All rights reserved.

  4. The effect of C60 doping on the electroluminescent performance of organic light-emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xiao Jing; Guo Dong; Hao Jingang; Zhang Yuanyuan; Gao Yinhao; Liang Chunjun

    2007-01-01

    Organic light-emitting devices (OLEDs) with the PVK hole transport layer were fabricated. The effect of C 60 doping in the hole transport PVK layer on the performance of the devices was investigated by changing the C 60 content from 0 to 3.0 wt%. The OLEDs had a structure of ITO/PEDOT:PSS/PVK:C 60 (0, 0.5, 1.0, 2.0, 3.0 wt%)/AlQ/LiF/Al. The doping led to a higher conductivity in C 60 -doped PVK layer and the hole mobility of PVK was improved from 4.5x10 -7 to 2.6x10 -6 cm 2 /Vs with the doping concentration of C 60 changing from 0 to 3.0 wt%. Moreover, the doping led to a high density of equilibrium charges carriers, which facilitated hole injection and transport. Doping of C 60 in PVK resulted in efficient hole injection and low drive voltage at high luminance

  5. Structural, optical and ferromagnetic properties of Cr doped TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Choudhury, Biswajit; Choudhury, Amarjyoti

    2013-01-01

    Graphical abstract: Doping of Cr 3+ distorts the lattice of TiO 2 , generate oxygen vacancies and create d-band states in the mid band gap of TiO 2 . Incorporation of Cr 3+ also imparts magnetism in non-magnetic TiO 2 by undergoing coupling with the neighboring oxygen vacancies. -- Highlights: • Incorporation of Cr 3+ increases the concentration of oxygen vacancies in TiO 2 nanoparticles. • Doped TiO 2 nanoparticles contain absorption peaks corresponding to d–d transition of Cr 3+ into TiO 2 . • Pure and doped TiO 2 nanoparticles contain emission peaks related to oxygen vacancies. • Pure TiO 2 shows diamagnetism while Cr doped TiO 2 shows ferromagnetism. • The ferromagnetism is due to the interaction of Cr 3+ ions via oxygen vacancies. -- Abstract: Cr doped TiO 2 nanoparticles are prepared with three different concentrations of chromium, 1.5%, 3.0% and 4.5 mol% respectively. Doping decreases the crystallinity and increases the width of the X-ray diffraction peak. The Raman active E g peak of TiO 2 nanoparticles become asymmetric and shifted to higher energy on doping of 4.5% chromium. Electron paramagnetic resonance spectra reveal the presence of Cr 3+ in the host TiO 2 matrix. The absorption spectra of Cr doped TiO 2 nanoparticles contain absorption peaks corresponding to d–d transition of Cr 3+ in octahedral coordination. Most of the visible emission peaks are due to the electrons trapped in the oxygen vacancy centers. Undoped TiO 2 nanoparticles show diamagnetism at room temperature while all chromium doped samples show ferromagnetism. The magnetization of the doped samples increases at 1.5% and 3.0% and decreases at 4.5%. The ferromagnetism arises owing to the interaction of the neighboring Cr 3+ ions via oxygen vacancies. The decrease of magnetization at the highest doping is possibly due to the antiferromagnetic interactions of Cr 3+ pairs or due to Cr 3+ -O 2− -Cr 3+ superexchange interaction in the lattice

  6. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  7. Nitrogen-Doped Three Dimensional Graphene for Electrochemical Sensing.

    Science.gov (United States)

    Yan, Jing; Chen, Ruwen; Liang, Qionglin; Li, Jinghong

    2015-07-01

    The rational assembly and doping of graphene play an crucial role in the improvement of electrochemical performance for analytical applications. Covalent assembly of graphene into ordered hierarchical structure provides an interconnected three dimensional conductive network and large specific area beneficial to electrolyte transfer on the electrode surface. Chemical doping with heteroatom is a powerful tool to intrinsically modify the electronic properties of graphene due to the increased free charge-carrier densities. By incorporating covalent assembly and nitrogen doping strategy, a novel nitrogen doped three dimensional reduced graphene oxide nanostructure (3D-N-RGO) was developed with synergetic enhancement in electrochemical behaviors. The as prepared 3D-N-RGO was further applied for catechol detection by differential pulse voltammetry. It exhibits much higher electrocatalytic activity towards catechol with increased peak current and decreased potential difference between the oxidation and reduction peaks. Owing to the improved electro-chemical properties, the response of the electrochemical sensor varies linearly with the catechol concentrations ranging from 5 µM to 100 µM with a detection limit of 2 µM (S/N = 3). This work is promising to open new possibilities in the study of novel graphene nanostructure and promote its potential electrochemical applications.

  8. Doping Attitudes and Covariates of Potential Doping Behaviour in High-Level Team-Sport Athletes; Gender Specific Analysis

    Directory of Open Access Journals (Sweden)

    Damir Sekulic, Enver Tahiraj, Milan Zvan, Natasa Zenic, Ognjen Uljevic, Blaz Lesnik

    2016-12-01

    Full Text Available Team sports are rarely studied with regard to doping behaviour and doping-related factors regardless of their global popularity. This study aimed to investigate doping factors and covariates of potential doping behaviour in high-level team-sport athletes. The subjects were 457 high-performing, national- and international-level athletes (21.9 ± 3.4 years of age; 179 females involved in volleyball (n = 77, soccer (n = 163, basketball (n = 114 and handball (n = 103. Previously validated self-administered questionnaires aimed at evidencing sport factors, doping-related factors, knowledge on sport nutrition and doping, and attitudes to performance enhancement were used. The results indicated a higher doping likelihood in male athletes, with a significant gender difference for basketball and handball. In males, a higher doping likelihood is found for athletes who had achieved better results at junior-age level, those who regularly consume dietary supplements, and who perceive their sport as being contaminated by doping. A higher sport achievement at senior-age level is protective against potential doping behaviour in males. In females, a higher likelihood of doping is evidenced in those athletes involved in binge drinking, while a lower tendency for doping is evidenced in female athletes who possess better knowledge on sport nutrition. Knowledge about doping is very low and thus education about doping is urgently needed. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in females. Future studies should consider other approaches and theories, such as theory of planned behaviour and/or social-cognitive theory, in studying the problem of doping behaviour in team-sports.

  9. High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

    2012-03-30

    Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

  10. Structural and room temperature ferromagnetic properties of Ni doped ZnO nanoparticles via low-temperature hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Kun; Liu, Changzhen, E-mail: liuchangzhen94@163.com; Chen, Rui; Fang, Xiaoxiang; Wu, Xiuling; Liu, Jie

    2016-12-01

    A series of Zn{sub 1−x}Ni{sub x}O (x=0, 1%, 3%, 5%) nanoparticles have been synthesized via a low-temperature hydrothermal method. Influence of Ni doping concentration on the structure, morphology, optical properties and magnetism of the samples was investigated by means of X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, UV–vis spectrophotometer and vibrating sample magnetometer instruments. The results show that the undoped and doped ZnO nanoparticles are both hexagonal wurtzite structures. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The images of SEM reveal that the structure of pure ZnO and Ni doped samples are nanoparticles which intended to form flakes with thickness of few nanometers, being overlain with each one to develop the network with some pores and voids. Based on the ultraviolet–visible (UV–vis) spectroscopy analysis, it indicates that the band gap energy decreases with the increasing concentration of Ni. Furthermore, The Ni doped ZnO samples didn't exhibit higher ultraviolet-light-driven photocatalytic activity compared to the undoped ZnO sample. Vibrating sample magnetometer was used for the magnetic property investigations, and the result indicates that room temperature ferromagnetism property of 3% Ni doped sample is attributed to oxygen vacancy and interaction between doped ions.

  11. Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface.

    Science.gov (United States)

    Lee, M; Arras, R; Warot-Fonrose, B; Hungria, T; Lippmaa, M; Daimon, H; Casanove, M J

    2017-11-01

    The structure of Ir-doped LaAlO 3 /SrTiO 3 (001) interfaces was investigated on the atomic scale using probe-corrected transmission electron microscopy in high-angle annular dark-field scanning mode (HAADF-STEM) and electron energy loss spectroscopy (EELS), combined with first-principles calculations. We report the evolution of the strain state experimentally measured in a 5 unit-cell thick LaAlO 3 film as a function of the Ir concentration in the topmost SrTiO 3 layer. It is shown that the LaAlO 3 layers remain fully elastically strained up to 3% of Ir doping, whereas a higher doping level seems to promote strain relaxation through enhanced cationic interdiffusion. The observed differences between the energy loss near edge structure (ELNES) of Ti-L 2,3 and O-K edges at non-doped and Ir-doped interfaces are consistent with the location of the Ir dopants at the interface, up to 3% of Ir doping. These findings, supported by the results of density functional theory (DFT) calculations, provide strong evidence that the effect of dopant concentrations on the properties of this kind of interface should not be analyzed without obtaining essential information from the fine structural and chemical analysis of the grown structures.

  12. First-principles study of structural and work function properties for nitrogen-doped single-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Shao, Xiji; Li, Detian; Cai, Jianqiu; Luo, Haijun; Dong, Changkun

    2016-01-01

    Graphical abstract: - Highlights: • Substitutional nitrogen atom doping in capped (5, 5) SWNT is investigated. • Serious defects appear from breaks of C−N bonds with N contents of above 23.3 at.%. • Work function drops after N doping and may reach 4.1 eV. - Abstract: The structural and electronic properties of the capped (5, 5) single-walled carbon nanotube (SWNT), including the structural stability, the work function, and the charge transfer performance, are investigated for the substitutional nitrogen atom doping under different concentrations by first-principles density functional theory. The geometrical structure keeps almost intact with single or two N atom doping, while C−N bonds may break up with serious defects for N concentrations of 23.3 at.% and above. The SWNT remains metallic and the work function drops after doping due to the upward shift of Fermi level, leading to the increase of the electrical conductivity. N doping enhances the oxygen reduction activity stronger than N adsorption because of higher charge transfers.

  13. Carbon Nitrogen Co-Doped P25: Parameter Study on Photodegradation of Reactive Red 4

    Directory of Open Access Journals (Sweden)

    Azami M. S.

    2016-01-01

    Full Text Available Photocatalytic degradation rate of reactive red 4 (RR4 using carbon coated nitrogen doped TiO2 (C N co-doped TiO2 in photocatalysis process is main goal on this research. The main operating the parameters such as effect of initial dye concentration, catalyst loading, aeration flow rate and initial pH on degradation of RR4 under 45 W fluorescent lamp was investigated. photocatalytic activity of RR4 dye decreased with increasing RR4 dye concentration. The optimum loading is around 0.04 g and optimum aeration rate is about 25 mL min-1 of C N co-doped TiO2. Effect of pH was conducted based on the optimum loading and conclude that the photocatalytic degradation of RR4 became faster at pH 2 - 7. For the future work, the modification of doping with others element like non-metal or metal with C N co-doped TiO2 can be enhanced toward the higher efficieny of photodegradation under visible light. Moreover, the immobilized technique can be used in future to overcome the difficulty of filtration on suspension.

  14. Improving the selective cancer killing ability of ZnO nanoparticles using Fe doping.

    Science.gov (United States)

    Thurber, Aaron; Wingett, Denise G; Rasmussen, John W; Layne, Janet; Johnson, Lydia; Tenne, Dmitri A; Zhang, Jianhui; Hanna, Charles B; Punnoose, Alex

    2012-06-01

    This work reports a new method to improve our recent demonstration of zinc oxide (ZnO) nanoparticles (NPs) selectively killing certain human cancer cells, achieved by incorporating Fe ions into the NPs. Thoroughly characterized cationic ZnO NPs (∼6 nm) doped with Fe ions (Zn(1-x )Fe (x) O, x = 0-0.15) were used in this work, applied at a concentration of 24 μg/ml. Cytotoxicity studies using flow cytometry on Jurkat leukemic cancer cells show cell viability drops from about 43% for undoped ZnO NPs to 15% for ZnO NPs doped with 7.5% Fe. However, the trend reverses and cell viability increases with higher Fe concentrations. The non-immortalized human T cells are markedly more resistant to Fe-doped ZnO NPs than cancerous T cells, confirming that Fe-doped samples still maintain selective toxicity to cancer cells. Pure iron oxide samples displayed no appreciable toxicity. Reactive oxygen species generated with NP introduction to cells increased with increasing Fe up to 7.5% and decreased for >7.5% doping.

  15. Ex situ n+ doping of GeSn alloys via non-equilibrium processing

    Science.gov (United States)

    Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

    2018-06-01

    Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

  16. Study of Polymeric Luminescent Blend (PC/PMMA) Doped with Europium Complex under Gamma-Iradiation

    International Nuclear Information System (INIS)

    Parra, D. F.

    2006-01-01

    Spectroscopic properties of blends formed by bisphenol-A polycarbonate (PC) and poly(methyl methacrylate) (PMMA) doped with europium in organic complex were studied. Polymeric luminescent blends are potential materials for many applications; however, little information has been reported concerning the stability under thermal and radiation conditions. Luminescent films were synthesized from europium thenoyltrifluoroacetonate at different concentrations doped in PC/PMMA blends. Films produced of the luminescent polymer blend were irradiated in a 60 C o source. Their luminescent properties, in the solid state, as well as, the thermal oxidative resistance after gamma irradiation was investigated. These systems were characterized by elemental analysis, thermogravimetry (TGA), differential scanning calorimetry (DSC) and infrared spectroscopy (FTIR). Based on TGA data, the thermal stability of PC/PMMA:(tta)3 system is higher than the polymer blend. The DSC results indicated that those new systems are chemically stables. The emission spectra of the Eu 3 +-tta complex doped in the PC/PMMA recorded at 298 and 77 K exhibited the characteristic bands arising from the 5 D 0 →7 F J transitions (J = 0-6). The luminescence intensity decreases with increasing of precursor concentration in the doped polymer obtained by chemical reaction. This result is different from that of samples obtained by physical method in melting doping. The blend was irradiated under ionizing radiation of 60 C o source. After irradiation of the luminescent films the physical properties of luminescence, thermal and oxidative stability were evaluated.(Fapesp and Cnpq financial support)

  17. Luminescence studies of rare earth doped dosimeters

    International Nuclear Information System (INIS)

    Karali, T.

    1999-10-01

    from the rare earth sites, with signals characteristic of the RE 3+ states. Once more, the data suggest that the rare earth ions are active both in the trapping and luminescence processes where ionic radii influence the TL peak temperature. Finally, the research has expanded to include the analysis of high resolution RL spectra of CaSO 4 and MgB 4 O 7 doped with different concentrations of rare earths. This thesis presents the preliminary results and reveals that in higher concentrations, RE ions form a cluster which reduce the luminescence emission. (author)

  18. Doping Attitudes and Covariates of Potential Doping Behaviour in High-Level Team-Sport Athletes; Gender Specific Analysis

    Science.gov (United States)

    Sekulic, Damir; Tahiraj, Enver; Zvan, Milan; Zenic, Natasa; Uljevic, Ognjen; Lesnik, Blaz

    2016-01-01

    Team sports are rarely studied with regard to doping behaviour and doping-related factors regardless of their global popularity. This study aimed to investigate doping factors and covariates of potential doping behaviour in high-level team-sport athletes. The subjects were 457 high-performing, national- and international-level athletes (21.9 ± 3.4 years of age; 179 females) involved in volleyball (n = 77), soccer (n = 163), basketball (n = 114) and handball (n = 103). Previously validated self-administered questionnaires aimed at evidencing sport factors, doping-related factors, knowledge on sport nutrition and doping, and attitudes to performance enhancement were used. The results indicated a higher doping likelihood in male athletes, with a significant gender difference for basketball and handball. In males, a higher doping likelihood is found for athletes who had achieved better results at junior-age level, those who regularly consume dietary supplements, and who perceive their sport as being contaminated by doping. A higher sport achievement at senior-age level is protective against potential doping behaviour in males. In females, a higher likelihood of doping is evidenced in those athletes involved in binge drinking, while a lower tendency for doping is evidenced in female athletes who possess better knowledge on sport nutrition. Knowledge about doping is very low and thus education about doping is urgently needed. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in females. Future studies should consider other approaches and theories, such as theory of planned behaviour and/or social-cognitive theory, in studying the problem of doping behaviour in team-sports. Key points The doping knowledge among Kosovar team-sport athletes is very low and systematic anti-doping education is urgently needed. The highest risk of doping behaviour in males is found for those athletes who had been

  19. Doping the dots: doped quantum dots for luminescent solar concentrators

    NARCIS (Netherlands)

    Eilers, J.J.

    2015-01-01

    In this thesis, synthesis methods for luminescent organically capped colloidal ZnSe QDs of different sizes, ranging from 4.0 to 7.5 nm are reported. These QDs are analyzed using TEM, absorption spectroscopy, photoluminescence measurements and temperature dependent photoluminescence decay

  20. Doping effect on the physical properties of Ca10Pt3As8(Fe2As2)5 single crystals

    Science.gov (United States)

    Pan, Jiayun; Karki, Amar; Plummer, E. W.; Jin, Rongying

    2017-12-01

    Ca10Pt3As8(Fe2As2)5 is a unique parent compound for superconductivity, which consists of both semiconducting Pt3As8 and metallic FeAs layers. We report the observation of superconductivity induced via chemical doping in either Ca site using rare-earth (RE) elements (RE  =  La, Gd) or Fe site using Pt. The interlayer distance and the normal-state physical properties of the doped system change correspondingly. The coupled changes include (1) superconducting transition temperature T c increases with increasing both doping concentration and interlayer distance, (2) our T c value is higher than previously reported maximum value for Pt doping in the Fe site, (3) both the normal-state in-plane resistivity and out-of-plane resistivity change from non-metallic to metallic behavior with increasing doping concentration and T c, and (4) the transverse in-plane magnetoresistance (MRab) changes from linear-field dependence to quadratic behavior upon increasing T c. For La-doped compound with the highest T c (~35 K), upper critical fields (Hc2ab , Hc2c ), coherence lengths (ξ ab, ξ c), and in-plane penetration depth (λ ab) are estimated. We discuss the relationship between chemical doping, interlayer distance, and physical properties in this system.

  1. Effect of MnO doping on the structure, microstructure and electrical properties of the (K,Na,Li)(Nb,Ta,Sb)O3 lead-free piezoceramics

    International Nuclear Information System (INIS)

    Rubio-Marcos, F.; Marchet, P.; Vendrell, X.; Romero, J.J.; Remondiere, F.; Mestres, L.; Fernandez, J.F.

    2011-01-01

    Highlights: · MnO doping effects on structure and properties of (K,Na,Li)(Nb,Ta,Sb)O 3 piezoceramics. · The structure changes towards an orthorhombic symmetry for higher MnO concentrations. · High doping levels induce a tetragonal tungsten-bronze secondary phase. · Mn 2+ doping modifies the phase transition temperature and the piezoelectric properties. · Manganese doping increases the mechanical quality factor Q m . - Abstract: Mn 2+ -doped (K,Na,Li)(Nb,Ta,Sb)O 3 lead-free piezoelectric ceramics have been prepared by a conventional sintering technique. The effects of Mn 2+ doping on the phase structure, microstructure and ferro-piezoelectric properties of the ceramics have been evaluated. MnO doping modifies the (K,Na,Li)(Nb,Ta,Sb)O 3 structure, giving rise to the appearance of a TTB-like secondary phase and to changes on the orthorhombic to tetragonal phase transition temperature. The modification of this temperature induces a reduction of the piezoelectric constants, which is accompanied by an increase on the mechanical quality factor. Mn 2+ ions incorporate into the perovskite structure in different off ways depending on their concentration.

  2. Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β-Ga2O3 thin films

    Science.gov (United States)

    Guo, Daoyou; Qin, Xinyuan; Lv, Ming; Shi, Haoze; Su, Yuanli; Yao, Guosheng; Wang, Shunli; Li, Chaorong; Li, Peigang; Tang, Weihua

    2017-11-01

    Highly (201) oriented Zn-doped β-Ga2O3 thin films with different dopant concentrations were grown on (0001) sapphire substrates by radio frequency magnetron sputtering. With the increase of Zn dopant concentration, the crystal lattice expands, the energy band gap shrinks, and the oxygen vacancy concentration decreases. Both the metal semiconductor metal (MSM) structure photodetectors based on the pure and Zn-doped β-Ga2O3 thin films exhibit solar blind UV photoelectric property. Compared to the pure β-Ga2O3 photodetector, the Zn-doped one exhibits a lower dark current, a higher photo/dark current ratio, a faster photoresponse speed, which can be attributed to the decreases of oxygen vacancy concentration.[Figure not available: see fulltext.

  3. Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

    2008-01-01

    Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

  4. Improvement in the properties of Ag-doped YBa2Cu3O7-x grain boundary Josephson junctions

    International Nuclear Information System (INIS)

    Bolanos, G.; Baca, E.; Osorio, J.; Prieto, P.

    2000-01-01

    Ag-doped YBa 2 Cu 3 O 7-x (YBCO) thin films using 5 to 20 wt% Ag-doped YBCO targets have been grown by a DC sputtering technique on SrTiO 3 bicrystals. Critical currents of 4 to 5 x 10 6 A/cm 2 at 77 K were measured in YBCO films doped with 5 wt% Ag which has been found to be higher than the value of 1 x 10 6 A/cm 2 measured in undoped samples. The normal resistivity decreases by a doping of 5 wt% Ag and increases for higher Ag concentrations. The critical temperature, T c , of the Ag-YBCO films remained unchanged at 92 K as in the undoped YBCO samples. An I c R n product of 170 μV at 77 K was found in grain boundary Josephson junctions (GBJJs) with 5 wt% Ag, compared with the value of 100 μV measured in undoped samples at the same temperature. Current-voltage characteristics were measured in GBJJs, showing Shapiro steps under microwave radiation and Fraunhofer patterns with an external magnetic field. The improvement in the normal and superconducting properties of Ag-doped YBCO films has been interpreted using the De Genes model to establish that YBCO containing metallic Ag addition shows a superconductor-normal metal-superconductor (S-N-S) behavior, thereby the Ag-doping enhances the weak link behavior and is, therefore, appropriate for electronic applications. (orig.)

  5. Microwave absorption properties of gold nanoparticle doped polymers

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Ouattara, Lassana; Ingrosso, Chiara

    2011-01-01

    This paper presents a method for characterizing microwave absorption properties of gold nanoparticle doped polymers. The method is based on on-wafer measurements at the frequencies from 0.5GHz to 20GHz. The on-wafer measurement method makes it possible to characterize electromagnetic (EM) property...... of small volume samples. The epoxy based SU8 polymer and SU8 doped with gold nanoparticles are chosen as the samples under test. Two types of microwave test devices are designed for exciting the samples through electrical coupling and magnetic coupling, respectively. Measurement results demonstrate...... that the nanocomposites absorb a certain amount of microwave energy due to gold nanoparticles. Higher nanoparticle concentration results in more significant absorption effect....

  6. Microwave absorption properties of gold nanoparticle doped polymers

    Science.gov (United States)

    Jiang, C.; Ouattara, L.; Ingrosso, C.; Curri, M. L.; Krozer, V.; Boisen, A.; Jakobsen, M. H.; Johansen, T. K.

    2011-03-01

    This paper presents a method for characterizing microwave absorption properties of gold nanoparticle doped polymers. The method is based on on-wafer measurements at the frequencies from 0.5 GHz to 20 GHz. The on-wafer measurement method makes it possible to characterize electromagnetic (EM) property of small volume samples. The epoxy based SU8 polymer and SU8 doped with gold nanoparticles are chosen as the samples under test. Two types of microwave test devices are designed for exciting the samples through electrical coupling and magnetic coupling, respectively. Measurement results demonstrate that the nanocomposites absorb a certain amount of microwave energy due to gold nanoparticles. Higher nanoparticle concentration results in more significant absorption effect.

  7. Disorder-induced enhancement of conductance in doped nanowires

    Institute of Scientific and Technical Information of China (English)

    Xu Ning; Wang Bao-Lin; Sun Hou-Qian; Kong Fan-Jie

    2010-01-01

    A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires.The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.

  8. Negative effects of crystalline-SiC doping on the critical current density in Ti-sheathed MgB2(SiC)y superconducting wires

    International Nuclear Information System (INIS)

    Liang, G; Fang, H; Luo, Z P; Hoyt, C; Yen, F; Guchhait, S; Lv, B; Markert, J T

    2007-01-01

    Ti-sheathed MgB 2 wires doped with nanosize crystalline-SiC up to a concentration of 15 wt% SiC have been fabricated, and the effects of the SiC doping on the critical current density (J c ) and other superconducting properties studied. In contrast with the previously reported results that nano-SiC doping with a doping range below 16 wt% usually enhances J c , particularly at higher fields, our measurements show that SiC doping decreases J c over almost the whole field range from 0 to 7.3 T at all temperatures. Furthermore, it is found that the degradation of J c becomes stronger at higher SiC doping levels, which is also in sharp contrast with the reported results that J c is usually optimized at doping levels near 10 wt% SiC. Our results indicate that these negative effects on J c could be attributed to the absence of significant effective pinning centres (mainly Mg 2 Si) due to the high chemical stability of the crystalline-SiC particles

  9. Electroluminescence properties of organic light-emitting diodes with a red dye doped into Alq{sub 3} : rubrene mixed host

    Energy Technology Data Exchange (ETDEWEB)

    Kang, H. Y. [Inha University, Incheon (Korea, Republic of); Lee, C. H. [Seoul National University, Seoul (Korea, Republic of)

    2004-09-15

    We have studied the electroluminescence (EL) properties of devices with a red fluorescent dye, 4-(dicyanomethylene)-2-t-butyl-6- (1,1,7,7-tetramethyl-julolidyl-9-enyl)--4H-py ran (DCJTB), doped into a mixed matrix of tris-(8-hydroxyquinoline)aluminum (Alq{sub 3}) and rubrene. The devices doped with DCJTB in the Alq{sub 3}:rubrene mixed host show an efficient red emission from DCJTB with negligible EL emission from both Alq{sub 3} and rubrene. The QE increases with increasing rubrene concentration and reaches a maximum of about 3.6 % for a DCJTB doping concentration of about 5 % in the Alq3:rubrene mixed (50:50 % ratio by weight) host, and then decreases at higher rubrene concentration, due to the concentration quenching effect. At a given bias voltage, the current density increases with increasing rubrene doping concentration, but it decreases with increasing DCJTB doping concentration. The results imply that the injected electrons and holes can transport via hopping through the energy levels of rubrene molecules while DCJTB acts as traps.

  10. Effect of Ga doping and point defect on magnetism of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Qingyu [College of Science, Inner Mongolia University of Technology, 010051 Hohhot (China); Zhao, Chunwang, E-mail: cwzhao@shmtu.edu.cn [College of Arts and Sciences, Shanghai Maritime University, 201306 Shanghai (China); Jia, Xiaofang; Qu, Lingfeng [College of Science, Inner Mongolia University of Technology, 010051 Hohhot (China)

    2017-02-01

    The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.

  11. Concentrations of higher dicarboxylic acids C5–C13 in fresh snow samples collected at the High Alpine Research Station Jungfraujoch during CLACE 5 and 6

    Directory of Open Access Journals (Sweden)

    K. Sieg

    2009-03-01

    Full Text Available Samples of freshly fallen snow were collected at the high alpine research station Jungfraujoch (Switzerland in February and March 2006 and 2007, during the Cloud and Aerosol Characterization Experiments (CLACE 5 and 6. In this study a new technique has been developed and demonstrated for the measurement of organic acids in fresh snow. The melted snow samples were subjected to solid phase extraction and resulting solutions analysed for organic acids by HPLC-MS-TOF using negative electrospray ionization. A series of linear dicarboxylic acids from C5 to C13 and phthalic acid, were identified and quantified. In several samples the biogenic acid pinonic acid was also observed. In fresh snow the median concentration of the most abundant acid, adipic acid, was 0.69 μg L−1 in 2006 and 0.70 μg L−1 in 2007. Glutaric acid was the second most abundant dicarboxylic acid found with median values of 0.46 μg L−1 in 2006 and 0.61 μg L−1 in 2007, while the aromatic acid phthalic acid showed a median concentration of 0.34 μg L−1 in 2006 and 0.45 μg L−1 in 2007. The concentrations in the samples from various snowfall events varied significantly, and were found to be dependent on the back trajectory of the air mass arriving at Jungfraujoch. Air masses of marine origin showed the lowest concentrations of acids whereas the highest concentrations were measured when the air mass was strongly influenced by boundary layer air.

  12. Low iron stores are related to higher blood concentrations of manganese, cobalt and cadmium in non-smoking, Norwegian women in the HUNT 2 study

    Energy Technology Data Exchange (ETDEWEB)

    Margrete Meltzer, Helle, E-mail: helle.margrete.meltzer@fhi.no [Division of Environmental Medicine, Department of Food Safety and Nutrition, Norwegian Institute of Public Health, PO Box 4404 Nydalen, N-0403 Oslo (Norway); Lise Brantsaeter, Anne [Division of Environmental Medicine, Department of Food Safety and Nutrition, Norwegian Institute of Public Health, PO Box 4404 Nydalen, N-0403 Oslo (Norway); Borch-Iohnsen, Berit [Institute of Basic Medical Sciences, Department of Nutrition, University of Oslo, PO Box 1046 Blindern, N-0316 Oslo (Norway); Ellingsen, Dag G. [National Institute of Occupational Health, PO Box 8149 Dep, N-0033 Oslo (Norway); Alexander, Jan [Division of Environmental Medicine, Department of Food Safety and Nutrition, Norwegian Institute of Public Health, PO Box 4404 Nydalen, N-0403 Oslo (Norway); Thomassen, Yngvar [National Institute of Occupational Health, PO Box 8149 Dep, N-0033 Oslo (Norway); Stigum, Hein [Division of Epidemiology, Department of Chronic Diseases, Norwegian Institute of Public Health, PO Box 4404 Nydalen, N-0403 Oslo (Norway); Ydersbond, Trond A. [Statistics Norway, P.Box 8131 Dep, N-0033 Oslo (Norway)

    2010-07-15

    Low iron (Fe) stores may influence absorption or transport of divalent metals in blood. To obtain more knowledge about such associations, the divalent metal ions cadmium (Cd), manganese (Mn), cobalt (Co), copper (Cu), zinc (Zn) and lead (Pb) and parameters of Fe metabolism (serum ferritin, haemoglobin (Hb) and transferrin) were investigated in 448 healthy, menstruating non-smoking women, age 20-55 years (mean 38 years), participating in the Norwegian HUNT 2 study. The study population was stratified for serum ferritin: 257 were iron-depleted (serum ferritin <12 {mu}g/L) and 84 had iron deficiency anaemia (serum ferritin <12 {mu}g/L and Hb<120 g/L). The low ferritin group had increased blood concentrations of Mn, Co and Cd but normal concentrations of Cu, Zn and Pb. In multiple regression models, ferritin emerged as the main determinant of Mn, Co and Cd (p<0.001), while no significant associations with Cu, Zn and Pb were found. Adjusted r{sup 2} for the models were 0.28, 0.48 and 0.34, respectively. Strong positive associations between blood concentrations of Mn, Co and Cd were observed, also when controlled for their common association with ferritin. Apart from these associations, the models showed no significant interactions between the six divalent metals studied. Very mild anaemia (110{<=}Hb<120 g/L) did not seem to have any effect independent of low ferritin. Approximately 26% of the women with iron deficiency anaemia had high concentrations of all of Mn, Co and Cd as opposed to 2.3% of iron-replete subjects. The results confirm that low serum ferritin may have an impact on body kinetics of certain divalent metal ions, but not all. Only a fraction of women with low iron status exhibited an increased blood concentration of divalent metals, providing indication of complexities in the body's handling of these metals.

  13. Doping and thrombosis in sports.

    Science.gov (United States)

    Lippi, Giuseppe; Banfi, Giuseppe

    2011-11-01

    Historically, humans have long sought to enhance their "athletic" performance to increase body weight, aggressiveness, mental concentration and physical strength, contextually reducing fatigue, pain, and improving recovery. Although regular training is the mainstay for achieving these targets, the ancillary use of ergogenic aids has become commonplace in all sports. The demarcation between ergogenic aids and doping substances or practices is continuously challenging and mostly based on perceptions regarding the corruption of the fairness of competition and the potential side effects or adverse events arising from the use of otherwise unnecessary ergogenic substances. A kaleidoscope of side effects has been associated with the use of doping agents, including behavioral, skeletal, endocrinologic, metabolic, hemodynamic, and cardiovascular imbalances. Among the various doping substances, the most striking association with thrombotic complications has been reported for androgenic anabolic steroids (i.e., cardiomyopathy, fatal and nonfatal arrhythmias, myocardial infarction [MI], intracardiac thrombosis, stroke, venous thromboembolism [VTE], limb arterial thrombosis, branch retinal vein occlusion, cerebral venous sinus thrombosis) and blood boosting (i.e., VTE and MI, especially for epoetin and analogs). The potential thrombotic complication arising from misuse of other doping agents such as the administration of cortisol, growth hormone, prolactin, cocaine, and platelet-derived preparations is instead speculative or anecdotal at best. The present article provides an overview on the epidemiological association as well as the underlying biochemical and biological mechanisms linking the practice of doping in sports with the development of thrombosis. © Thieme Medical Publishers.

  14. Positron annihilation study of Pd contacts on impurity-doped GaN

    International Nuclear Information System (INIS)

    Lee, Jong-Lam; Kim, Jong Kyu; Weber, Marc H.; Lynn, Kelvin G.

    2001-01-01

    Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. [copyright] 2001 American Institute of Physics

  15. Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

    Science.gov (United States)

    Duffy, Ray; Ricchio, Alessio; Murphy, Ruaidhrí; Maxwell, Graeme; Murphy, Richard; Piaszenski, Guido; Petkov, Nikolay; Hydes, Alan; O'Connell, Dan; Lyons, Colin; Kennedy, Noel; Sheehan, Brendan; Schmidt, Michael; Crupi, Felice; Holmes, Justin D.; Hurley, Paul K.; Connolly, James; Hatem, Chris; Long, Brenda

    2018-03-01

    The advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Limitations in ADP P monolayer doping with a SiO2 cap are due to the difficulties in dopant incorporation, as it is based on in-diffusion, and P atoms must overcome a potential barrier on the Si surface.

  16. Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

    KAUST Repository

    Mansour, Ahmed

    2017-05-23

    Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

  17. Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

    KAUST Repository

    Mansour, Ahmed; Kirmani, Ahmad R.; Barlow, Stephen; Marder, Seth R.; Amassian, Aram

    2017-01-01

    Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

  18. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  19. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  20. Cow allergen (Bos d2) and endotoxin concentrations are higher in the settled dust of homes proximate to industrial-scale dairy operations.

    Science.gov (United States)

    Williams, D' Ann L; McCormack, Meredith C; Matsui, Elizabeth C; Diette, Gregory B; McKenzie, Shawn E; Geyh, Alison S; Breysse, Patrick N

    2016-01-01

    Airborne contaminants produced by industrial agricultural facilities contain chemical and biological compounds that can impact the health of residents living in close proximity. Settled dust can be a reservoir for these contaminants and can influence long-term exposures. In this study, we sampled the indoor- and outdoor-settled dust from 40 homes that varied in proximity to industrial-scale dairies (ISD; industrial-scale dairy, a term used in this paper to describe a large dairy farm and adjacent waste sprayfields, concentrated animal feeding operation or animal feeding operation, that uses industrial processes) in the Yakima Valley, Washington. We analyzed settled dust samples for cow allergen (Bos d2, a cow allergen associated with dander, hair, sweat and urine, it is a member of the lipocalin family of allergens associated with mammals), mouse allergen (Mus m1; major mouse allergen, a mouse urinary allergen, in the lipocalin family), dust mite allergens (Der p1 (Dermatophagoides pteronissinus 1) and Der f1 (Dermatophagoides farinae 1)), and endotoxin (a component of the cell walls of gram negative bacteria, lipopolysaccharide, which can be found in air and dust and can produce a strong inflammatory response). A concentration gradient was observed for Bos d2 and endotoxin measured in outdoor-settled dust samples based on proximity to ISD. Indoor-settled dust concentrations of Bos d2 and endotoxin were also highest in proximal homes. While the associated health effects of exposure to cow allergen in settled dust is unknown, endotoxin at concentrations observed in these proximal homes (100 EU/mg) has been associated with increased negative respiratory health effects. These findings document that biological contaminants emitted from ISDs are elevated in indoor- and outdoor-settled dust samples at homes close to these facilities and extend to as much as three miles (4.8 km) away.

  1. Electronegativity and doping in semiconductors

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2012-01-01

    Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

  2. Electronegativity and doping in semiconductors

    KAUST Repository

    Schwingenschlögl, Udo

    2012-08-23

    Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

  3. Activation of PKA in cell requires higher concentration of cAMP than in vitro: implications for compartmentalization of cAMP signalling.

    Science.gov (United States)

    Koschinski, Andreas; Zaccolo, Manuela

    2017-10-26

    cAMP is a ubiquitous second messenger responsible for the cellular effects of multiple hormones and neurotransmitters via activation of its main effector, protein kinase A (PKA). Multiple studies have shown that the basal concentration of cAMP in several cell types is about 1 μM. This value is well above the reported concentration of cAMP required to half-maximally activate PKA, which measures in the 100-300 nM range. Several hypotheses have been suggested to explain this apparent discrepancy including inaccurate measurements of intracellular free cAMP, inaccurate measurement of the apparent activation constant of PKA or shielding of PKA from bulk cytosolic cAMP via localization of the enzyme to microdomains with lower basal cAMP concentration. However, direct experimental evidence in support of any of these models is limited and a firm conclusion is missing. In this study we use multiple FRET-based reporters for the detection of cAMP and PKA activity in intact cells and we establish that the sensitivity of PKA to cAMP is almost twenty times lower when measured in cell than when measured in vitro. Our findings have important implications for the understanding of compartmentalized cAMP signalling.

  4. Low iron stores are related to higher blood concentrations of manganese, cobalt and cadmium in non-smoking, Norwegian women in the HUNT 2 study

    International Nuclear Information System (INIS)

    Margrete Meltzer, Helle; Lise Brantsaeter, Anne; Borch-Iohnsen, Berit; Ellingsen, Dag G.; Alexander, Jan; Thomassen, Yngvar; Stigum, Hein; Ydersbond, Trond A.

    2010-01-01

    Low iron (Fe) stores may influence absorption or transport of divalent metals in blood. To obtain more knowledge about such associations, the divalent metal ions cadmium (Cd), manganese (Mn), cobalt (Co), copper (Cu), zinc (Zn) and lead (Pb) and parameters of Fe metabolism (serum ferritin, haemoglobin (Hb) and transferrin) were investigated in 448 healthy, menstruating non-smoking women, age 20-55 years (mean 38 years), participating in the Norwegian HUNT 2 study. The study population was stratified for serum ferritin: 257 were iron-depleted (serum ferritin 2 for the models were 0.28, 0.48 and 0.34, respectively. Strong positive associations between blood concentrations of Mn, Co and Cd were observed, also when controlled for their common association with ferritin. Apart from these associations, the models showed no significant interactions between the six divalent metals studied. Very mild anaemia (110≤Hb<120 g/L) did not seem to have any effect independent of low ferritin. Approximately 26% of the women with iron deficiency anaemia had high concentrations of all of Mn, Co and Cd as opposed to 2.3% of iron-replete subjects. The results confirm that low serum ferritin may have an impact on body kinetics of certain divalent metal ions, but not all. Only a fraction of women with low iron status exhibited an increased blood concentration of divalent metals, providing indication of complexities in the body's handling of these metals.

  5. The EVEREST Doping Profile Module. Version 4

    International Nuclear Information System (INIS)

    Ashby, J.; Fowler, R.; Greenough, C.

    1998-01-01

    In this report we describe the EVEREST Doping Module which forms part of the EVEREST suite of programs. The doping module is responsible for generating a neutral file which gives the acceptor and donor densities at each node the device mesh. The neutral file also contains details of the functions used to generate the doping as mesh refinement in the solver requires this. Commands allow the definition of background doping, regions of uniform doping, non-uniform doping relating to windows found in the Geometry neutral file and a user-programmable FORTRAN subroutine which computes doping concentrations as a function of position. The EVEREST suite is one of the products of the ESPRIT project EVEREST (ESPRIT 962E-17, Three-Dimensional Algorithms for a Robust and Efficient Semiconductor Simulator with Parameter Extraction). EVEREST was a four-year project supported by the European Community under the European Strategic Program for Research in Information Technology (ESPRIT) which is investigating suitable algorithms for the analysis of semiconductor devices in three dimensions, and developing software implementing the most effective of those algorithms. The original authors of the Doping Module were G.A. Duffett and M.S. Towers of University College, Swansea. (author)

  6. Cobalt-doped nanohydroxyapatite: synthesis, characterization, antimicrobial and hemolytic studies

    Energy Technology Data Exchange (ETDEWEB)

    Tank, Kashmira P., E-mail: kashmira_physics@yahoo.co.in [Saurashtra University, Crystal Growth Laboratory, Physics Department (India); Chudasama, Kiran S.; Thaker, Vrinda S. [Saurashtra University, Bioscience Department (India); Joshi, Mihir J., E-mail: mshilp24@rediffmail.com [Saurashtra University, Crystal Growth Laboratory, Physics Department (India)

    2013-05-15

    Hydroxyapatite (Ca{sub 10}(PO{sub 4}){sub 6}(OH){sub 2}; HAP) is a major mineral component of the calcified tissues, and it has various applications in medicine and dentistry. In the present investigation, cobalt-doped hydroxyapatite (Co-HAP) nanoparticles were synthesized by surfactant-mediated approach and characterized by different techniques. The EDAX was carried out to estimate the amount of doping in Co-HAP. The transmission electron microscopy result suggested the transformation of morphology from needle shaped to spherical type on increasing the doping concentration. The powder XRD study indicated the formation of a new phase of brushite for higher concentration of cobalt. The average particle size and strain were calculated using Williamson-Hall analysis. The average particle size was found to be 30-60 nm. The FTIR study confirmed the presence of various functional groups in the samples. The antimicrobial activity was evaluated against four organisms Pseudomonas aeruginosa and Shigella flexneri as Gram negative as well as Micrococcus luteus and Staphylococcus aureus as Gram positive. The hemolytic test result suggested that all samples were non-hemolytic. The photoluminescence study was carried out to identify its possible applicability as a fluorescent probe.

  7. Cobalt-doped nanohydroxyapatite: synthesis, characterization, antimicrobial and hemolytic studies

    International Nuclear Information System (INIS)

    Tank, Kashmira P.; Chudasama, Kiran S.; Thaker, Vrinda S.; Joshi, Mihir J.

    2013-01-01

    Hydroxyapatite (Ca 10 (PO 4 ) 6 (OH) 2 ; HAP) is a major mineral component of the calcified tissues, and it has various applications in medicine and dentistry. In the present investigation, cobalt-doped hydroxyapatite (Co-HAP) nanoparticles were synthesized by surfactant-mediated approach and characterized by different techniques. The EDAX was carried out to estimate the amount of doping in Co-HAP. The transmission electron microscopy result suggested the transformation of morphology from needle shaped to spherical type on increasing the doping concentration. The powder XRD study indicated the formation of a new phase of brushite for higher concentration of cobalt. The average particle size and strain were calculated using Williamson–Hall analysis. The average particle size was found to be 30–60 nm. The FTIR study confirmed the presence of various functional groups in the samples. The antimicrobial activity was evaluated against four organisms Pseudomonas aeruginosa and Shigella flexneri as Gram negative as well as Micrococcus luteus and Staphylococcus aureus as Gram positive. The hemolytic test result suggested that all samples were non-hemolytic. The photoluminescence study was carried out to identify its possible applicability as a fluorescent probe.

  8. Higher Concentrations of BCAAs and 3-HIB Are Associated with Insulin Resistance in the Transition from Gestational Diabetes to Type 2 Diabetes

    Directory of Open Access Journals (Sweden)

    Ulrika Andersson-Hall

    2018-01-01

    Full Text Available Aim. Determine the metabolic profile and identify risk factors of women transitioning from gestational diabetes mellitus (GDM to type 2 diabetes mellitus (T2DM. Methods. 237 women diagnosed with GDM underwent an oral glucose tolerance test (OGTT, anthropometrics assessment, and completed lifestyle questionnaires six years after pregnancy. Blood was analysed for clinical variables (e.g., insulin, glucose, HbA1c, adiponectin, leptin, and lipid levels and NMR metabolomics. Based on the OGTT, women were divided into three groups: normal glucose tolerance (NGT, impaired glucose tolerance (IGT, and T2DM. Results. Six years after GDM, 19% of subjects had T2DM and 19% IGT. After BMI adjustment, the IGT group had lower HDL, higher leptin, and higher free fatty acid (FFA levels, and the T2DM group higher triglyceride, FFA, and C-reactive protein levels than the NGT group. IGT and T2DM groups reported lower physical activity. NMR measurements revealed that levels of branched-chain amino acids (BCAAs and the valine metabolite 3-hydroxyisobyturate were higher in T2DM and IGT groups and correlated with measures of insulin resistance and lipid metabolism. Conclusion. In addition to well-known clinical risk factors, BCAAs and 3-hydroxyisobyturate are potential markers to be evaluated as predictors of metabolic risk after pregnancy complicated by GDM.

  9. Scanning spreading resistance microscopy of shallow doping profiles in silicon

    International Nuclear Information System (INIS)

    Suchodolskis, A.; Hallen, A.; Gran, J.; Hansen, T.-E.; Karlsson, U.O.

    2006-01-01

    We demonstrate the application of scanning spreading resistance microscopy (SSRM) for characterization of shallow highly-conductive layers formed by boron implantation of lowly doped n-type silicon substrate followed by a post-implantation annealing. The electrically active dopant concentration versus depth was obtained from a cross-section of freshly cleaved samples where the Si-surface could be clearly distinguished by depositing a SiO 2 -layer before cleavage. To quantify free carrier concentration we calibrated our data against samples with implanted/annealed boron profiles established by secondary ion mass spectrometry (SIMS). A good fit of SSRM and SIMS data is possible for free carrier concentrations lower than 10 20 cm -3 , but for higher concentrations there is a discrepancy indicating an incomplete activation of the boron

  10. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  11. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

  12. The effect of doping on thermoelectric performance of p-type SnSe: Promising thermoelectric material

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Niraj Kumar; Bathula, Sivaiah; Gahtori, Bhasker [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Tyagi, Kriti [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Acdemy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (NPL) Campus, New Delhi (India); Haranath, D. [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

    2016-05-25

    Tin selenide (SnSe) based thermoelectric materials are being explored for making inexpensive and efficient thermoelectric devices with improved thermoelectric efficiency. As both Sn and Se are earth abundant and relatively inexpensive and these alloys do not involve toxic materials, such as lead and expensive tellurium. Hence, in the present study, we have synthesized SnSe doped with 2 at% of aluminium (Al), lead (Pb), indium (In) and copper (Cu) individually, which is not reported in literature. Out of these, Cu doped SnSe resulted in enhancement of figure-of-merit (zT) of ∼0.7 ± 0.02 at 773 K, synthesized employing conventional fusion method followed by spark plasma sintering. This enhancement in zT is ∼16% over the existing state-of-the-art value for p-type SnSe alloy doped with expensive Ag. This enhancement in ZT is primarily due to the presence of Cu{sub 2}Se second phase associated with intrinsic nanostructure formation of SnSe. This enhancement has been corroborated with the microstructural characterization using field emission scanning electron microscopy and X-ray diffraction studies. Also, Cu doped SnSe exhibited a higher value of carrier concentration in comparison to other samples doped with Al, Pb and In. Further, the compatibility factor of Cu doped SnSe alloys exhibited value of 1.62 V{sup −1} at 773 K and it is suitable to segment with most of the novel TE materials for obtaining the higher thermoelectric efficiencies. - Highlights: • Tin selenide (SnSe) doped with non-toxic and inexpensive dopants. • Synthesized highly dense SnSe employing Spark plasma sintering. • Enhanced thermoelectric compatibility factor of SnSe. • Enhanced thermoelectric performance of SnSe doped with Copper.

  13. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  14. Highly doped layer for tunnel junctions in solar cells

    Science.gov (United States)

    Fetzer, Christopher M.

    2017-08-01

    A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

  15. Polyurethane doped with low-concentration erbium

    NARCIS (Netherlands)

    Ciobanu, C.; Stoica, E.; Cascaval, C.N.; Rosu, D.; Rosu, L.; State, M.; Emandi, A.; Nemes, I.; Petrescu, F.

    2007-01-01

    ABSTRACT: Polyurethane (PU) with lactate structures inits conformation can be used as a biological and biodegradablepolymer. Polyurethane lactate (PUL) was dopedwith small quantities of an erbium (Er3þ) complex, whichhindered the N¼N group. 2,20-Dihydroxyazobenzene wasused as a ligand for the Er3þ

  16. Thermoelectric properties of Cu/Ag doped type-III Ba24Ge100 clathrates

    Science.gov (United States)

    Fu, Jiefei; Su, Xianli; Yan, Yonggao; Liu, Wei; Zhang, Zhengkai; She, Xiaoyu; Uher, Ctirad; Tang, Xinfeng

    2017-09-01

    Type-III Ba24Ge100 clathrates possess low thermal conductivity and high electrical conductivity at room temperature and, as such, have a great potential as thermoelectric materials for power generation. However, the Seebeck coefficient is very low due to the intrinsically high carrier concentration. In this paper, a series of Ba24CuxGe100-x and Ba24AgyGe100-y specimens were prepared by vacuum melting combined with the subsequent spark plasma sintering (SPS) process. Doping Cu or Ag on the Ge site not only suppresses the concentration of electrons but it also decreases the thermal conductivity. In addition, the carrier mobility and the Seebeck coefficient increase due to the decrease in the carrier concentration. Thus, the power factor is greatly improved, leading to an improvement in the dimensionless figure of merit ZT. Cu-doped Ba24Cu6Ge94 reaches the maximum ZT value of about 0.17 at 873 K, while Ag-doped Ba24Ag6Ge94 attains the dimensionless figure of merit ZT of 0.31 at 873 K, more than 2 times higher value compared to un-doped Ba24Ge100.

  17. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

    Science.gov (United States)

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

  18. Current Status of Doping in Japan Based on Japan Anti-Doping Disciplinary Panels of the Japan Anti-Doping Agency (JADA): A Suggestion on Anti-Doping Activities by Pharmacists in Japan.

    Science.gov (United States)

    Imanishi, Takashi; Kawabata, Takayoshi; Takayama, Akira

    2017-01-01

    In 2009, the Japan Anti-Doping Agency (JADA) established the "Sports Pharmacist Accreditation Program" to prevent doping in sports. Since then, anti-doping activities in Japan have been attracting attention. In this study, we investigated research about the current status of doping from 2007 to 2014 in Japan to make anti-doping activities more concrete, and we also discussed future anti-doping activities by pharmacists. In Japan, bodybuilding was the sporting event with the highest number and rate of doping from 2007 to 2014. Many of the positive doping cases were detected for class S1 (anabolic agents), S5 (diuretics and masking agents), and S6 (stimulants). Within class S1, supplements were the main cause of positive doping. Within class S5, medicines prescribed by medical doctors were the main cause of positive doping. Within class S6, non-prescription medicines (e.g., OTC) were the main cause of positive doping. When we looked at the global statistics on doping, many of the positive doping cases were detected for class S1. On comparing the Japanese statistics with the global statistics, the rate of positive doping caused by class S1 was significantly lower, but that caused by classes S5 and S6 was significantly higher in Japan than in the world. In conclusion, pharmacists in Japan should pay attention to class S1, S5, and S6 prohibited substances and to the sport events of bodybuilding. Based on this study, sports pharmacists as well as common pharmacists should suggest new anti-doping activities to prevent doping in the future.

  19. A Moessbauer study of doped magnetite

    International Nuclear Information System (INIS)

    Nistor, C.I.; Boekema, C.; Woude, F. van der; Sawatzky, G.A.

    1975-01-01

    Doped magnetite was investigated by means of the Moessbauer effect to ascertain the behaviour of conduction electrons in magnetite. The Moessbauer spectrum of Fe 3 O 4 recorded at room temperature consisted of two patterns: one corresponding to the Fe 3+ (A) ions and another corresponding to the Fe(B) ions. The first A and B lines of the room temperature Moessbauer spectra of Msub(0.1)Fesub(2.9)O 4 with M = Li, Ni and Sn are presented. The B site lines of the spectra were asymmetrically broadened and showed a certain structure whereas the A site lines were narrow. In the Moessbauer spectrum of Lisub(0.2)Fesub(2.8)O 4 recorded at 407 0 C even separate lines between the A and B patterns were observed. It was found that the symmetry and line broadening were only slightly temperature dependent and were still present at higher temperatures. The application of a charge oscillation model was found to be valid only for lower impurity concentrations. The Moessbauer study of doped magnetite revealed the occurrence of spin and charge density oscillations in the B sublattice. (Z.S.)

  20. Raman scattering and band-gap variations of Al-doped ZnO nanoparticles synthesized by a chemical colloid process

    International Nuclear Information System (INIS)

    Lo, Shih-Shou; Huang, Dison; Tu, Chun Hsiang; Hou, Chia-Hung; Chen, Chii-Chang

    2009-01-01

    This study synthesizes Al-doped ZnO (AZO) nanoparticles using a chemical colloid process. Raman scattering analysis shows that Al doping increases the lattice defects and induces Raman vibration modes of 651 cm -1 . The Raman shift of the active mode E 2 (high) of AZO nanoparticles shows the presence and increase in the stress in nanoparticles when the Al dopant concentration increases. Room-temperature photoluminescence (RT-PL) spectra of synthesized AZO nanoparticles exhibit strong UV emissions near the band edges. The RT-PL peak shifts to a higher photon energy region as the Al concentration increases, indicating a broadening of the band gap.

  1. Neutron transmutation doping of gallium arsenide

    International Nuclear Information System (INIS)

    Alexiev, D.

    1987-12-01

    Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm 3 per cm 2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated

  2. EPR in non-doped irradiated polyacetylene

    International Nuclear Information System (INIS)

    Hola, O.; Stasko, A.; Foeldesova, M.

    1993-01-01

    The influence of γ-irradiation on the paramagnetic properties of non-doped polyacetylene at low and high radiation doses has been studied and summarized. The dependence of the EPR spectra on the radiation dose in irradiated polyacetylene has been measured. No essential changes of the spin mobility as a consequence of irradiation were observed. The measurements of spin concentration confirm the high resistivity of non-doped polyacetylene to radiation. (author) 9 refs

  3. Blood haemoglobin concentrations are higher in smokers and heavy alcohol consumers than in non-smokers and abstainers-should we adjust the reference range?

    DEFF Research Database (Denmark)

    Milman, N.; Pedersen, Agnes N.

    2009-01-01

    The blood haemoglobin concentration is one of the most frequently used laboratory parameters in clinical practice. There is evidence that haemoglobin levels are influenced by tobacco smoking. The objective of this study was to evaluate the impact of smoking and alcohol consumption on haemoglobin.......001) and women (r = 0.08, p = 0.05). In non-smokers, alcohol consumption > 14 drinks/week and more than seven drinks/week for men and women, respectively, increased mean haemoglobin by 1.3% in men and by average 1.9% in women compared with those consuming a parts per thousand currency sign14 and less than...... small changes in haemoglobin do not justify the use of separate reference ranges in smokers and alcohol consumers....

  4. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor deposition ► Deposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  5. Improved optical properties and detectivity of an uncooled silicon carbide mid-wave infrared optical detector with increased dopant concentration

    International Nuclear Information System (INIS)

    Lim, Geunsik; Kar, Aravinda; Manzur, Tariq

    2012-01-01

    An n-type 4H-SiC substrate is doped with gallium using a laser doping technique and its optical response is investigated at the mid-wave infrared (MWIR) wavelength 4.21 μm as a function of the dopant concentration. The dopant creates a p-type energy level of 0.3 eV, which is the energy of a photon corresponding to the MWIR wavelength 4.21 μm. Therefore, Ga-doped SiC can be used as an uncooled MWIR detector because an optical signal was obtained at this wavelength when the sample was at room temperature. The energy level of the Ga dopant in the substrate was confirmed by optical absorption spectroscopy. Secondary ion mass spectroscopy (SIMS) of the doped samples revealed an enhancement in the solid solubility of Ga in the substrate when doping is carried out by increasing the number of laser scans. A higher dopant concentration increases the number of holes in the dopant energy level, enabling photoexcitation of more electrons from the valence band by the incident MWIR photons. The detector performance improves as the dopant concentration increases from 1.15 × 10 19 to 6.25 × 10 20 cm −3 . The detectivity of the optical photodetector is found to be 1.07 × 10 10 cm Hz 1/2 W −1 for the case of doping with four laser passes. (paper)

  6. Poor fluorinated graphene sheets carboxymethylcellulose polymer composite mode locker for erbium doped fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Mou, Chengbo, E-mail: mouc1@aston.ac.uk, E-mail: a.rozhin@aston.ac.uk; Turitsyn, Sergei; Rozhin, Aleksey, E-mail: mouc1@aston.ac.uk, E-mail: a.rozhin@aston.ac.uk [Aston Institute of Photonic Technologies, Aston University, Aston Triangle, Birmingham B4 7ET (United Kingdom); Arif, Raz [Aston Institute of Photonic Technologies, Aston University, Aston Triangle, Birmingham B4 7ET (United Kingdom); Physics Department, Faculty of Science, University of Sulaimani, Sulaimani, Kurdistan Region (Iraq); Lobach, Anatoly S.; Spitsina, Nataliya G. [Institute of Problems of Chemical Physics RAS, Ac. Semenov Av. 1, Chernogolovka, Moscow Region 142432 (Russian Federation); Khudyakov, Dmitry V. [Institute of Problems of Chemical Physics RAS, Ac. Semenov Av. 1, Chernogolovka, Moscow Region 142432 (Russian Federation); Physics Instrumentation Center of the Institute of General Physics A.M. Prokhorov Russian Academy of Sciences, Troitsk, Moscow Region 142190 (Russian Federation); Kazakov, Valery A. [Keldysh Center, Onezhskaya 8, Moscow 125438 (Russian Federation)

    2015-02-09

    We report poor fluorinated graphene sheets produced by thermal exfoliation embedding in carboxymethylcellulose polymer composite (GCMC) as an efficient mode locker for erbium doped fiber laser. Two GCMC mode lockers with different concentration have been fabricated. The GCMC based mode locked fiber laser shows stable soliton output pulse shaping with repetition rate of 28.5 MHz and output power of 5.5 mW was achieved with the high concentration GCMC, while a slightly higher output power of 6.9 mW was obtained using the low concentration GCMC mode locker.

  7. Some structural characteristics of gamma-irradiated pure and Li2O-doped NiO solids

    International Nuclear Information System (INIS)

    Ramadan, A.A.; Dessouki, A.M.

    1989-01-01

    The induced structural changes, due to Li 2 O-doping (2.5 mol%) and γ-irradiation (10-80 Mrad), of NiO were investigated by XRD analyses. The results obtained revealed that lithium-doping resulted in a significant increase in the internal strain and a decrease in lattice parameter. These changes were explained in terms of creation of Ni 3+ ions in the doped solids. γ-Irradiation of pure and doped solids effected a decrease in both crystallite size and microstrain upon subjecting to doses of 20 and 30 Mrad. Higher doses induced an increase in both parameters in the case of pure NiO and a further decrease in case of the doped solid. These results were attributed to splitting of the large strained crystallites and to an activated sintering of the small strained ones. γ-Irradiation effected also an increase in the lattice parameters of pure and doped solids due to removal of some excess oxygen with subsequent decrease in the concentration of Ni 3+ ions. (author)

  8. Zn doped MoO3 nanobelts and the enhanced gas sensing properties to ethanol

    Science.gov (United States)

    Yang, Shuang; Liu, Yueli; Chen, Tao; Jin, Wei; Yang, Tingqiang; Cao, Minchi; Liu, Shunshun; Zhou, Jing; Zakharova, Galina S.; Chen, Wen

    2017-01-01

    Zn doped MoO3 nanobelts with the thickness of 120-275 nm, width of 0.3-1.4 μm and length of more than 100 μm are prepared by hydrothermal reaction. The operating temperature of sensors based on Zn doped MoO3 nanobelts is 100-380 °C with a better response to low concentration of ethanol. The highest response value of sensors based on Zn doped MoO3 to 1000 ppm ethanol at 240 °C is 321, which is about 15 times higher than that of pure MoO3 nanobelts. The gas sensors based on Zn doped MoO3 nanobelts possess good selectivity to ethanol compared with methanol, ammonia, acetone and toluene, which implies that it would be a good candidate in the potential application. The improvement of gas sensing properties may be attributed to the increasing absorbed ethanol, the decreasing probability of ethoxy recombination, the promoted dehydrogenation progress at lower temperature, and the narrowed band gap by Zn doping.

  9. 乙炔提浓装置高级炔管线堵塞原因浅析%Analysis on causes of higher acetylene pipe blocking of acetylene concentration system

    Institute of Scientific and Technical Information of China (English)

    谢全兵

    2011-01-01

    Causes of higher alkyne pipe blocking of acetylene concentration system in the natural gas-based acetylene production plant were found out by analyzing higher alkyne gas component concentration variation. Corresponding measures were proposed to prevent higher alkyne polymerization in the pipe and thus prolong the equipment operation cycle.%通过对高级炔气体组分含量变化进行分析,找出天然气制乙炔装置乙炔浓缩系统高级炔管线堵塞的原因,并提出了防止高级炔气体在管线内聚合、延长装置运行周期的措施.

  10. Fabrication and photovoltaic performance of niobium doped TiO{sub 2} hierarchical microspheres with exposed {001} facets and high specific surface area

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yongqiang; Ran, Huili [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou 450001 (China); Fan, Jiajie, E-mail: fanjiajie@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou 450001 (China); Zhang, Xiaoli; Mao, Jing [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou 450001 (China); Shao, Guosheng [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, Zhengzhou University, Zhengzhou 450001 (China); Institute for Renewable Energy and Environmental Technologies, University of Bolton, Bolton BL3 5AB (United Kingdom)

    2017-07-15

    Highlights: • Nb-doped hierarchical TiO{sub 2} microsphere DSSCs show enhanced performance. • Nb{sup 5+} dopant replaces Ti{sup 4+} cation in TiO{sub 2} lattice. • Electrons transport was enhanced due to the down-shifted conduction band minimum. • Exposed (001) facets and high specific surface area allows high dye-loading. - Abstract: The niobium doped hierarchical anatase TiO{sub 2} microspheres, which are consist of a serried nano-thorns and plicate nano-ribbons with exposed {001} facets, were synthesized using hydrothermal method followed by heat treatment. The effects of niobium on the microstructures and photovoltaic performances of the dye-sensitized solar cells (DSSCs) were studied. The results revealed that Nb{sup 5+} doping replaces Ti{sup 4+} cations in TiO{sub 2} lattice, and the bandgap of the films varies with increasing Nb doping concentration because of the downshift of the conduction band minimum (CBM). The niobium-doped TiO{sub 2} DSSCs with moderate loadings show enhanced performance comparing with their pure TiO{sub 2} counterparts. Optimally, the conversion efficiency of the Nb-3.5 (Nb 3.5 mol%) DSSC is 4.99%. This is higher than that (4.39%) of pure TiO{sub 2} cells by 13.7%. This is due to the fact that the Nb-doped solar cells have increased the number of the photo-induced electrons because of their exposed (001) facets and higher specific surface area; and enhanced electrons collection and transport because of the downshifted CBM of the Nb-doped TiO{sub 2}. However, heavy Nb doping results in the decrease of the performance of the niobium-doped cells due to the excessive defects within the Nb-TiO{sub 2} samples resulting in enhanced charge recombination at defects.

  11. Effect of higher minimum inhibitory concentrations of quaternary ammonium compounds in clinical E. coli isolates on antibiotic susceptibilities and clinical outcomes.

    Science.gov (United States)

    Buffet-Bataillon, S; Branger, B; Cormier, M; Bonnaure-Mallet, M; Jolivet-Gougeon, A

    2011-10-01

    Quaternary ammonium compounds (QACs) are cationic surfactants used as preservatives and environmental disinfectants. Limited data are available regarding the effect of QACs in the clinical setting. We performed a prospective cohort study in 153 patients with Escherichia coli bacteraemia from February to September 2008 at University Hospital in Rennes. The minimum inhibitory concentrations (MICs) of antibiotics and QACs alkyldimethylbenzylammonium chloride (ADBAC) and didecyldimethylammonium chloride (DDAC) were determined by the agar dilution method. The capacity of biofilm production was assayed using the Crystal Violet method, and mutation frequencies by measuring the capacity of strains to generate resistance to rifampicin. Logistic regression analysis showed that one of the significant factors related to low MICs for ADBAC (≤16 mg/L) and DDAC (≤8 mg/L), was cotrimoxazole susceptibility (odds ratio: 3.72; 95% confidence interval: 1.22-11.24; P=0.02 and OR: 3.61; 95% CI: 1.56-7.56; PAntibiotic susceptibility to cotrimoxazole was strongly associated with susceptibility to amoxicillin and nalidixic acid (PE. coli isolates and antibiotic resistance. Copyright © 2011 The Healthcare Infection Society. Published by Elsevier Ltd. All rights reserved.

  12. Mg doping of GaN by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lieten, R R; Buchowicz, G; Dubon, O; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Borghs, G

    2011-01-01

    We present a systematic study on the influence of growth conditions on the incorporation and activation of Mg in GaN layers grown by plasma-assisted molecular beam epitaxy. We show that high quality p-type GaN layers can be obtained on GaN-on-silicon templates. The Mg incorporation and the electrical properties have been investigated as a function of growth temperature, Ga : N flux ratio and Mg : Ga flux ratio. It was found that the incorporation of Mg and the electrical properties are highly sensitive to the Ga : N flux ratio. The highest hole mobility and lowest resistivity were achieved for slightly Ga-rich conditions. In addition to an optimal Ga : N ratio, an optimum Mg : Ga flux ratio was also observed at around 1%. We observed a clear Mg flux window for p-type doping of GaN : 0.31% 17 cm -3 and a mobility of 15 cm 2 V -1 s -1 . Temperature-dependent Hall effect measurements indicate an acceptor depth in these samples of 100 meV for a hole concentration of 5.5 x 10 17 cm -3 . The corresponding Mg concentration is 5 x 10 19 cm -3 , indicating approximately 1% activation at room temperature. In addition to continuous growth of Mg-doped GaN layers we also investigated different modulated growth procedures. We show that a modulated growth procedure has only limited influence on Mg doping at a growth temperature of 800 deg. or higher. This result is thus in contrast to previously reported GaN : Mg doping at much lower growth temperatures of 500 deg. C.

  13. First-principles study on electronic structures and magnetic properties of Eu-doped phosphorene

    Science.gov (United States)

    Luan, Zhaohui; Zhao, Lei; Chang, Hao; Sun, Dan; Tan, Changlong; Huang, Yuewu

    2017-11-01

    The structural, electronic and magnetic properties of Eu-doped phosphorene with different doping concentrations were investigated by first-principles calculations for the first time. The calculations show that Eu-doped phosphorene systems are stable and have the large magnetic moments of more than 6 μB by 2.7, 6.25 and 12.5 at.% doping concentrations. The major contribution to the magnetic moment stems from the 4f states of Eu-doped atom. Meanwhile, Eu-doped atom introduces the impurity bands which can be changed by different doping concentrations. In order to determine the magnetic interaction, the different configurations for two Eu atoms doping in 3 × 3 × 1 phosphorene supercell were studied, which reveals that all of the configurations tend to form ferromagnetic. These results can provide references for inducing large magnetism of two-dimensional phosphorene, which are valuable for their applications in spintronic devices and novel semiconductor materials.

  14. Consumption of meat is associated with higher fasting glucose and insulin concentrations regardless of glucose and insulin genetic risk scores: a meta-analysis of 50,345 Caucasians12

    Science.gov (United States)

    Fretts, Amanda M; Follis, Jack L; Nettleton, Jennifer A; Lemaitre, Rozenn N; Ngwa, Julius S; Wojczynski, Mary K; Kalafati, Ioanna Panagiota; Varga, Tibor V; Frazier-Wood, Alexis C; Houston, Denise K; Lahti, Jari; Ericson, Ulrika; van den Hooven, Edith H; Mikkilä, Vera; Kiefte-de Jong, Jessica C; Mozaffarian, Dariush; Rice, Kenneth; Renström, Frida; North, Kari E; McKeown, Nicola M; Feitosa, Mary F; Kanoni, Stavroula; Smith, Caren E; Garcia, Melissa E; Tiainen, Anna-Maija; Sonestedt, Emily; Manichaikul, Ani; van Rooij, Frank JA; Dimitriou, Maria; Raitakari, Olli; Pankow, James S; Djoussé, Luc; Province, Michael A; Hu, Frank B; Lai, Chao-Qiang; Keller, Margaux F; Perälä, Mia-Maria; Rotter, Jerome I; Hofman, Albert; Graff, Misa; Kähönen, Mika; Mukamal, Kenneth; Johansson, Ingegerd; Ordovas, Jose M; Liu, Yongmei; Männistö, Satu; Uitterlinden, André G; Deloukas, Panos; Seppälä, Ilkka; Psaty, Bruce M; Cupples, L Adrienne; Borecki, Ingrid B; Franks, Paul W; Arnett, Donna K; Nalls, Mike A; Eriksson, Johan G; Orho-Melander, Marju; Franco, Oscar H; Lehtimäki, Terho; Dedoussis, George V; Meigs, James B; Siscovick, David S

    2015-01-01

    Background: Recent studies suggest that meat intake is associated with diabetes-related phenotypes. However, whether the associations of meat intake and glucose and insulin homeostasis are modified by genes related to glucose and insulin is unknown. Objective: We investigated the associations of meat intake and the interaction of meat with genotype on fasting glucose and insulin concentrations in Caucasians free of diabetes mellitus. Design: Fourteen studies that are part of the Cohorts for Heart and Aging Research in Genomic Epidemiology consortium participated in the analysis. Data were provided for up to 50,345 participants. Using linear regression within studies and a fixed-effects meta-analysis across studies, we examined 1) the associations of processed meat and unprocessed red meat intake with fasting glucose and insulin concentrations; and 2) the interactions of processed meat and unprocessed red meat with genetic risk score related to fasting glucose or insulin resistance on fasting glucose and insulin concentrations. Results: Processed meat was associated with higher fasting glucose, and unprocessed red meat was associated with both higher fasting glucose and fasting insulin concentrations after adjustment for potential confounders [not including body mass index (BMI)]. For every additional 50-g serving of processed meat per day, fasting glucose was 0.021 mmol/L (95% CI: 0.011, 0.030 mmol/L) higher. Every additional 100-g serving of unprocessed red meat per day was associated with a 0.037-mmol/L (95% CI: 0.023, 0.051-mmol/L) higher fasting glucose concentration and a 0.049–ln-pmol/L (95% CI: 0.035, 0.063–ln-pmol/L) higher fasting insulin concentration. After additional adjustment for BMI, observed associations were attenuated and no longer statistically significant. The association of processed meat and fasting insulin did not reach statistical significance after correction for multiple comparisons. Observed associations were not modified by genetic

  15. A short literature survey on iron and cobalt ion doped TiO{sub 2} thin films and photocatalytic activity of these films against fungi

    Energy Technology Data Exchange (ETDEWEB)

    Tatl Latin-Small-Letter-Dotless-I dil, Ilknur [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Bacaks Latin-Small-Letter-Dotless-I z, Emin [Department of Physics, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Buruk, Celal Kurtulus [Department of Microbiology, Faculty of Medicine, Karadeniz Technical University, 61080 Trabzon (Turkey); Breen, Chris [Materials and Engineering Research Institution, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Soekmen, Muenevver, E-mail: msokmen@ktu.edu.tr [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Co or Fe doped TiO{sub 2} thin films were prepared by sol-gel method. Black-Right-Pointing-Pointer We obtained lower E{sub g} values for Fe-doped and Co-TiO{sub 2} thin films. Black-Right-Pointing-Pointer Doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Black-Right-Pointing-Pointer Photocatalytic killing effect of the doped TiO{sub 2} thin films on C. albicans and A. niger was significantly higher than undoped TiO{sub 2} thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe{sup 3+} or Co{sup 2+} ion doped TiO{sub 2} thin films and suspensions were summarized. Additionally, a sol-gel method was used for preparation of the 2% Co or Fe doped TiO{sub 2} thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E{sub g} value was 3.40 eV for the pure TiO{sub 2}, 3.00 eV for the Fe-doped TiO{sub 2} film and 3.25 eV for Co-TiO{sub 2} thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO{sub 2} thin film on Candida albicans was significantly higher than Fe doped TiO{sub 2} thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

  16. Consequence of doping mediated strain and the activation energy on the structural and optical properties of ZnO:Cr nanoparticles

    International Nuclear Information System (INIS)

    Bhargava, Richa; Sharma, Prashant K.; Kumar, Sanjeev; Pandey, Avinash C.; Kumar, Naresh

    2010-01-01

    We report on the sol-gel synthesis of Zn 1-x Cr x O (x=0.0, 0.05, 0.10, 0.15 and 0.20) nanoparticles. These nanoparticles were characterized by using thermogravimetry/differential scanning calorimetry (TG/DSC), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman and Photoluminescence (PL). Electronegativity of Cr ions (Cr 3+ ) reduces the final decomposition temperature by 40 o C and activation energy of the reaction when Cr is doped into ZnO. Doping of higher Cr concentration (x≥0.10) into ZnO shows formation of secondary spinel (ZnCr 2 O 4 ) phase along with the hexagonal (ZnO) and is revealed by XRD. Formation of secondary phase changes the activation energy of the reaction and thus the strain in ZnO lattice. In Raman spectra, additional Raman modes have been observed for Zn 1-x Cr x O nanoparticles, which can be assigned to the modes generated due to Cr doping. The Cr doping into ZnO is also supported by PL, in which vacancies are formed with Cr ion incorporation and emission band shifts towards higher wavelength. - Graphical abstract: Cr-doped ZnO nanostructures were synthesized by sol-gel. XRD (a) revealed secondary phase of ZnCr 2 O 4 with increase in Cr concentration. The Cr concentration also changes activation energy of the reaction (b).

  17. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  18. Unraveling the mechanism of molecular doping in organic semiconductors.

    Science.gov (United States)

    Mityashin, Alexander; Olivier, Yoann; Van Regemorter, Tanguy; Rolin, Cedric; Verlaak, Stijn; Martinelli, Nicolas G; Beljonne, David; Cornil, Jérôme; Genoe, Jan; Heremans, Paul

    2012-03-22

    The mechanism by which molecular dopants donate free charge carriers to the host organic semiconductor is investigated and is found to be quite different from the one in inorganic semiconductors. In organics, a strong correlation between the doping concentration and its charge donation efficiency is demonstrated. Moreover, there is a threshold doping level below which doping simply has no electrical effect. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. The soluble receptor for vitamin B12 uptake (sCD320) increases during pregnancy and occurs in higher concentration in urine than in serum

    DEFF Research Database (Denmark)

    Abuyaman, Omar; Andreasen, Birgitte H; Kronborg, Camilla

    2013-01-01

    BACKGROUND: Cellular uptake of vitamin B12 (B12) demands binding of the vitamin to transcobalamin (TC) and recognition of TC-B12 (holoTC) by the receptor CD320, a receptor expressed in high quantities on human placenta. We have identified a soluble form of CD320 (sCD320) in serum and here we...... gestational weeks 17-41. sCD320, holoTC, total TC and complex formation between holoTC and sCD320 were measured by in-house ELISA methods, while creatinine was measured on the automatic platform Cobas 6000. Size exclusion chromatography was performed on a Superdex 200 column. RESULTS: Median (range) of serum...... was around two fold higher than in serum. Urinary sCD320/creatinine ratio correlated with serum sCD320 and reached a peak median level of 53 (30-101) pmol/mmol creatinine (week 35). sCD320 present in serum and urine showed the same elution pattern upon size exclusion chromatography. CONCLUSION: We report...

  20. Substrate and Mg doping effects in GaAs nanowires

    Directory of Open Access Journals (Sweden)

    Perumal Kannappan

    2017-10-01

    Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

  1. Synthesis and photocatalytic activity of ytterbium-doped titania/diatomite composite photocatalysts

    International Nuclear Information System (INIS)

    Tang, Wenjian; Qiu, Kehui; Zhang, Peicong; Yuan, Xiqiang

    2016-01-01

    Graphical abstract: - Highlights: • Yb-doped TiO_2/diatomite composite photocatalysts were prepared by a sol-gel method. • Yb-doped TiO_2/diatomite photocatalysts show much higher photocatalytic activity. • The higher photodegradation rate is due to the effect of diatomite and Yb doping. - Abstract: Ytterbium-doped titanium dioxide (Yb-TiO_2)/diatomite composite materials with different Yb concentrations were prepared by sol–gel method. The phase structure, morphology, and chemical composition of the as-prepared composites were well characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), and ultraviolet–visible (UV–vis) diffuse reflection spectroscopy. The XRD and Raman spectroscopy analysis indicated that the TiO_2 existed in the form of pure anatase in the composites. The SEM images exhibited the well deposition and dispersion of TiO_2 nanoparticles with little agglomeration on the surfaces of diatoms. The UV–vis diffuse reflection spectra showed that the band gap of TiO_2 could be narrowed by the introduction of Yb species, which was further affected by doping concentration of Yb. The photocatalytic activity of synthesized samples was investigated by the degradation of methylene blue (MB) under UV light irradiation. It was observed that the photocatalytic degradation followed a pseudo-first-order kinetics according to the Langmuir–Hinshelwood model. Compared to TiO_2 and TiO_2/diatomite, the Yb-TiO_2/diatomite composites exhibited higher photocatalytic activity toward degradation of MB using UV light irradiation.

  2. Synthesis and photocatalytic activity of ytterbium-doped titania/diatomite composite photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Wenjian; Qiu, Kehui; Zhang, Peicong; Yuan, Xiqiang

    2016-01-30

    Graphical abstract: - Highlights: • Yb-doped TiO{sub 2}/diatomite composite photocatalysts were prepared by a sol-gel method. • Yb-doped TiO{sub 2}/diatomite photocatalysts show much higher photocatalytic activity. • The higher photodegradation rate is due to the effect of diatomite and Yb doping. - Abstract: Ytterbium-doped titanium dioxide (Yb-TiO{sub 2})/diatomite composite materials with different Yb concentrations were prepared by sol–gel method. The phase structure, morphology, and chemical composition of the as-prepared composites were well characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), and ultraviolet–visible (UV–vis) diffuse reflection spectroscopy. The XRD and Raman spectroscopy analysis indicated that the TiO{sub 2} existed in the form of pure anatase in the composites. The SEM images exhibited the well deposition and dispersion of TiO{sub 2} nanoparticles with little agglomeration on the surfaces of diatoms. The UV–vis diffuse reflection spectra showed that the band gap of TiO{sub 2} could be narrowed by the introduction of Yb species, which was further affected by doping concentration of Yb. The photocatalytic activity of synthesized samples was investigated by the degradation of methylene blue (MB) under UV light irradiation. It was observed that the photocatalytic degradation followed a pseudo-first-order kinetics according to the Langmuir–Hinshelwood model. Compared to TiO{sub 2} and TiO{sub 2}/diatomite, the Yb-TiO{sub 2}/diatomite composites exhibited higher photocatalytic activity toward degradation of MB using UV light irradiation.

  3. Er –Al2O3 nanoparticles doping of borosilicate glass

    Indian Academy of Sciences (India)

    Administrator

    for determining the optical properties.2 While in homoge- ... of RE-doped single crystals (higher absorption/emission ... nanoparticles doping on the thermal, optical, structural ... The density of the bulk glass materials was measured.

  4. Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

    KAUST Repository

    Ohkawa, Kazuhiro

    2017-10-24

    GaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.

  5. Structural, optical and magnetic properties of Cr doped SnO2 nanoparticles stabilized with polyethylene glycol

    International Nuclear Information System (INIS)

    Subramanyam, K.; Sreelekha, N.; Murali, G.; Reddy, D. Amaranatha; Vijayalakshmi, R.P.

    2014-01-01

    Pure and Cr (1, 3, 5 and 7 at%) doped SnO 2 nanoparticles were synthesized in aqueous solution by a simple chemical co-precipitation method using polyethylene glycol (PEG) as a stabilizing agent. The effect of Cr doping on the structural, optical and magnetic properties of SnO 2 nanoparticles was investigated. EDAX spectra confirmed the presence of Sn, O and Cr in near stoichiometry. XRD patterns revealed that particles of all samples were crystallized in single phase rutile type tetragonal crystal structure (P4 2 /mnm) of SnO 2 . The peak positions with Cr concentration shifted to higher 2θ values. Lattice parameters were also decreased with increasing Cr concentration. TEM studies indicated that the particle size is in the range of 8–10 nm. The optical absorption studies indicated that the absorption edge shifted towards lower wavelengths with inclusion of Cr content. FTIR spectrum displays various bands that are due to fundamental overtones of PEG and O–Sn–O entities. Further it revealed that the undoped and as well as Cr doped SnO 2 nanoparticles were capped by PEG. Magnetization measurements at room temperature revealed that all the doped samples were ferromagnetic in nature. Well defined strong room temperature ferromagnetic hysteresis loop was observed for 1% Cr doped SnO 2 nanoparticles

  6. Structural, optical and magnetic properties of Cr doped SnO{sub 2} nanoparticles stabilized with polyethylene glycol

    Energy Technology Data Exchange (ETDEWEB)

    Subramanyam, K.; Sreelekha, N. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Murali, G. [Department of BIN Fusion Technology and Department of Polymer-Nano Science and Technology, Chonbuk National University, Jeonju, Jeonbuk (Korea, Republic of); Reddy, D. Amaranatha [Department of Chemistry and Chemical Institute for Functional Materials, Pusan National University, Busan 609-735 (Korea, Republic of); Vijayalakshmi, R.P., E-mail: vijayaraguru@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India)

    2014-12-01

    Pure and Cr (1, 3, 5 and 7 at%) doped SnO{sub 2} nanoparticles were synthesized in aqueous solution by a simple chemical co-precipitation method using polyethylene glycol (PEG) as a stabilizing agent. The effect of Cr doping on the structural, optical and magnetic properties of SnO{sub 2} nanoparticles was investigated. EDAX spectra confirmed the presence of Sn, O and Cr in near stoichiometry. XRD patterns revealed that particles of all samples were crystallized in single phase rutile type tetragonal crystal structure (P4{sub 2}/mnm) of SnO{sub 2}. The peak positions with Cr concentration shifted to higher 2θ values. Lattice parameters were also decreased with increasing Cr concentration. TEM studies indicated that the particle size is in the range of 8–10 nm. The optical absorption studies indicated that the absorption edge shifted towards lower wavelengths with inclusion of Cr content. FTIR spectrum displays various bands that are due to fundamental overtones of PEG and O–Sn–O entities. Further it revealed that the undoped and as well as Cr doped SnO{sub 2} nanoparticles were capped by PEG. Magnetization measurements at room temperature revealed that all the doped samples were ferromagnetic in nature. Well defined strong room temperature ferromagnetic hysteresis loop was observed for 1% Cr doped SnO{sub 2} nanoparticles.

  7. Annealed Ce{sup 3+}-doped ZnO flower-like morphology synthesized by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Koao, Lehlohonolo F., E-mail: koaolf@ufs.ac.za [Department of Physics, University of the Free State (Qwa Qwa campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Dejene, Francis B.; Tsega, Moges [Department of Physics, University of the Free State (Qwa Qwa campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Swart, Hendrik C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein 9300 (South Africa)

    2016-01-01

    We have successfully synthesized ZnO:xmol% Ce{sup 3+} (0≤x≤10 mol%) doped nanopowders via the chemical bath deposition method (CBD) technique at low temperature (80 °C) and annealed in air at 700 °C. The X-ray diffraction patterns showed that all the undoped and Ce-doped ZnO nanopowders have a hexagonal wurtzite polycrystalline structure with an average crystallite size of about 46 nm. Weak diffraction peaks related mainly to cerium oxide were also detected at higher concentrations of Ce{sup 3+} (x=5–10 mol%). The scanning electron microscopy study revealed that the nanopowder samples were assembled in flower-shaped undoped ZnO and pyramid-shaped Ce{sup 3+}-doped ZnO nanostructures. The UV–vis spectra showed that the absorption edges shifted slightly to the longer wavelengths with the increase in the Ce{sup 3+} ions concentration. Moreover, the photoluminescence (PL) results showed a relative weak visible emission for the Ce{sup 3+}-doped ZnO nanoparticles compared to the undoped ZnO. The effects of Ce{sup 3+}-doping on the structure and PL of ZnO nanopowders are discussed in detail.

  8. Effect of MnO doping on the structure, microstructure and electrical properties of the (K,Na,Li)(Nb,Ta,Sb)O{sub 3} lead-free piezoceramics

    Energy Technology Data Exchange (ETDEWEB)

    Rubio-Marcos, F., E-mail: fernando.rubio-marcos@unilim.fr [Laboratoire de Science des Procedes Ceramiques et de Traitements de Surface, UMR 6638 CNRS, Universite de Limoges, Centre Europeen de la Ceramique, 12, rue Atlantis, 87068 Limoges Cedex (France); Marchet, P. [Laboratoire de Science des Procedes Ceramiques et de Traitements de Surface, UMR 6638 CNRS, Universite de Limoges, Centre Europeen de la Ceramique, 12, rue Atlantis, 87068 Limoges Cedex (France); Vendrell, X. [Grup de Quimica de l' Estat Solid, Departament de Quimica Inorganica, Universitat de Barcelona, 08028 Barcelona (Spain); Romero, J.J. [Electroceramic Department, Instituto de Ceramica y Vidrio, CSIC, Kelsen 5, 28049 Madrid (Spain); Remondiere, F. [Laboratoire de Science des Procedes Ceramiques et de Traitements de Surface, UMR 6638 CNRS, Universite de Limoges, Centre Europeen de la Ceramique, 12, rue Atlantis, 87068 Limoges Cedex (France); Mestres, L. [Grup de Quimica de l' Estat Solid, Departament de Quimica Inorganica, Universitat de Barcelona, 08028 Barcelona (Spain); Fernandez, J.F. [Electroceramic Department, Instituto de Ceramica y Vidrio, CSIC, Kelsen 5, 28049 Madrid (Spain)

    2011-09-01

    Highlights: {center_dot} MnO doping effects on structure and properties of (K,Na,Li)(Nb,Ta,Sb)O{sub 3} piezoceramics. {center_dot} The structure changes towards an orthorhombic symmetry for higher MnO concentrations. {center_dot} High doping levels induce a tetragonal tungsten-bronze secondary phase. {center_dot} Mn{sup 2+} doping modifies the phase transition temperature and the piezoelectric properties. {center_dot} Manganese doping increases the mechanical quality factor Q{sub m}. - Abstract: Mn{sup 2+}-doped (K,Na,Li)(Nb,Ta,Sb)O{sub 3} lead-free piezoelectric ceramics have been prepared by a conventional sintering technique. The effects of Mn{sup 2+} doping on the phase structure, microstructure and ferro-piezoelectric properties of the ceramics have been evaluated. MnO doping modifies the (K,Na,Li)(Nb,Ta,Sb)O{sub 3} structure, giving rise to the appearance of a TTB-like secondary phase and to changes on the orthorhombic to tetragonal phase transition temperature. The modification of this temperature induces a reduction of the piezoelectric constants, which is accompanied by an increase on the mechanical quality factor. Mn{sup 2+} ions incorporate into the perovskite structure in different off ways depending on their concentration.

  9. Synthesis of Antimony Doped Amorphous Carbon Films

    Science.gov (United States)

    Okuyama, H.; Takashima, M.; Akasaka, H.; Ohtake, N.

    2013-06-01

    We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

  10. Synthesis of Antimony Doped Amorphous Carbon Films

    International Nuclear Information System (INIS)

    Okuyama, H; Takashima, M; Akasaka, H; Ohtake, N

    2013-01-01

    We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp 2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

  11. Photocatalytic degradation of phenol by iodine doped tin oxide nanoparticles under UV and sunlight irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hamdi, Abdullah M.; Sillanpää, Mika [Laboratory of Green Chemistry, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Dutta, Joydeep, E-mail: dutta@squ.edu.om [Chair in Nanotechnology, Water Research Center, Sultan Qaboos University, P.O. Box 17, 123 Al-Khoudh (Oman)

    2015-01-05

    Highlights: • A sol–gel method used to synthesize tin oxide nanoparticles. • Nanoparticles of tin oxide doped with different iodine concentrations. • Degradation studies carried up with UV–vis, TOC, HPLC and GC instruments. • 1% iodine doped tin dioxide showed maximum photodegradation efficiency. - Abstract: Iodine doped tin oxide (SnO{sub 2}:I) nanoparticles were prepared by sol–gel synthesis and their photocatalytic activities with phenol as a test contaminant were studied. In the presence of the catalysts, phenol degradation under direct sunlight was comparable to what was achieved under laboratory conditions. Photocatalytic oxidation reactions were studied by varying the catalyst loading, light intensity, illumination time, pH of the reactant and phenol concentration. Upon UV irradiation in the presence of SnO{sub 2}:I nanoparticles, phenol degrades very rapidly within 30 min, forming carboxylic acid which turns the solution acidic. Phenol degradation rate with 1% iodine doped SnO{sub 2} nanoparticles is at least an order of magnitude higher compared to the degradation achieved through undoped SnO{sub 2} nanoparticles under similar illumination conditions.

  12. Photocatalytic degradation of phenol by iodine doped tin oxide nanoparticles under UV and sunlight irradiation

    International Nuclear Information System (INIS)

    Al-Hamdi, Abdullah M.; Sillanpää, Mika; Dutta, Joydeep

    2015-01-01

    Highlights: • A sol–gel method used to synthesize tin oxide nanoparticles. • Nanoparticles of tin oxide doped with different iodine concentrations. • Degradation studies carried up with UV–vis, TOC, HPLC and GC instruments. • 1% iodine doped tin dioxide showed maximum photodegradation efficiency. - Abstract: Iodine doped tin oxide (SnO 2 :I) nanoparticles were prepared by sol–gel synthesis and their photocatalytic activities with phenol as a test contaminant were studied. In the presence of the catalysts, phenol degradation under direct sunlight was comparable to what was achieved under laboratory conditions. Photocatalytic oxidation reactions were studied by varying the catalyst loading, light intensity, illumination time, pH of the reactant and phenol concentration. Upon UV irradiation in the presence of SnO 2 :I nanoparticles, phenol degrades very rapidly within 30 min, forming carboxylic acid which turns the solution acidic. Phenol degradation rate with 1% iodine doped SnO 2 nanoparticles is at least an order of magnitude higher compared to the degradation achieved through undoped SnO 2 nanoparticles under similar illumination conditions

  13. Rare earth oxide doping in oxide cathodes

    International Nuclear Information System (INIS)

    Engelsen, Daniel den; Gaertner, Georg

    2006-01-01

    The effect on life performance and poisoning with O 2 by doping oxide cathodes with rare earth oxides and pseudo rare earth oxides, notably yttria, is qualitatively explained in terms of electrolysis of BaO during emission of electrons. Doped cathodes show less electrolysis and consume therefore less Ba during life: consequently, doped cathodes have a better life performance. However, the lower Ba-production makes doped cathodes more sensitive to oxygen poisoning. The experimentally found relation between conductivity and yttria concentration was the motive to propose a new model for the crystal imperfections in BaO. In this new imperfection model most Y 3+ -ions will combine with barium vacancies, therefore, the increase of the conductivity is modest and also the effect on the position of the Fermi level is modest. By assuming a combination of bulk and surface conductivity, the agreement between experiment and theory can be improved further

  14. Structure and thermoelectric property of Te doped paracostibite CoSb1-xTexS compounds

    Science.gov (United States)

    You, Yonghui; Su, Xianli; Liu, Wei; Yan, Yonggao; Fu, Jiefei; Cheng, Xin; Zhang, Cheng; Tang, Xinfeng

    2018-06-01

    Paracostibite (CoSbS), a newly developed thermoelectric material, has aroused lots of interest due to its highly earth abundant and inexpensive constituent elements and potential application for thermoelectric power generation in the intermediate temperature range. Herein, a series of CoSb1-xTexS (x = 0-0.09) compounds were prepared by vacuum melting and annealing followed by SPS processing, and the effects of Te doping on the structure and thermoelectric properties were systematically investigated. Doping Te on the Sb site increases the carrier concentration up to 7.24 × 1020 cm-3 for CoSb0.93Te0.07S compound which is several orders of magnitude higher than that of un-doped CoSbS, and enhances the power factor. The maximum power factor of 14.07 μW cm-1 K-2 is attained at 900 K. Concomitantly, doping with Te on the Sb site leads to effective scattering of heat carrying phonon, accompanying with a strong suppression of the thermal conductivity with the increase of Te content, resulting in an increase of the ZT. A maximum ZT of 0.43 at 900 K is attained for CoSb0.93Te0.07S compound, which is 139% higher than that of un-doped CoSbS compound.

  15. Two dimensional tunable photonic crystals and n doped semiconductor materials

    International Nuclear Information System (INIS)

    Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

    2015-01-01

    In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

  16. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    International Nuclear Information System (INIS)

    Frigerio, J; Ballabio, A; Isella, G; Gallacher, K; Millar, R; Paul, D; Gilberti, V; Baldassarre, L; Ortolani, M; Milazzo, R; Napolitani, E; Maiolo, L; Minotti, A; Pecora, A; Bottegoni, F; Biagioni, P

    2017-01-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  10 19 cm −3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  10 20 cm −3 . Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved. (paper)

  17. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    Science.gov (United States)

    Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

    2017-11-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

  18. The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrov, D.; Shieh, H.-P.D

    2004-03-15

    Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks.

  19. Silicon doped InP as an alternative plasmonic material for mid-infrared

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

    2016-01-01

    Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

  20. Secondary ion mass spectrometry analysis of In-doped p-type GaN films

    International Nuclear Information System (INIS)

    Chiou, C.Y.; Wang, C.C.; Ling, Y.C.; Chiang, C.I.

    2003-01-01

    SIMS was used to investigate the isoelectronic In-doped p-type GaN films. The growth rate of the p-type GaN film decreased with increasing Mg and In doping. The Mg saturation in GaN was 3.55x10 19 atoms/cm 3 . The role of In as surfactant was evaluated by varying In concentrations and it was observed that the surface appeared smooth with increasing In incorporation. The Mg solubility in p-type GaN improved to 0.0025% molar ratio of the GaN with In incorporation. The In concentration results observed in neutron activation analysis (NAA) were found to be higher by a factor of 2.88 than that observed in SIMS and can be attributed to the difference in sensitivity of the two techniques. Good linearity in the results was observed from both techniques

  1. Thermoluminescence properties of undoped and nitrogen-doped CVD diamond exposed to gamma radiation

    International Nuclear Information System (INIS)

    Barboza-Flores, M.; Gastelum, S.; Cruz-Zaragoza, E.; Melendrez, R.; Chernov, V.; Pedroza-Montero, M.; Favalli, A.

    2008-01-01

    It is known that the thermoluminescence (TL) performance of CVD diamond depends on the impurity concentration and doping materials introduced during growing. We report on the TL properties of undoped and 750 ppm nitrogen-doped CVD diamond grown on (0 0 1) silicon substrate. The samples were exposed to gamma radiation from a Gammacell 200 Nordion irradiator in the 10-500 Gy dose range at 627 mGy/min dose rate. The nitrogen-doped CVD diamond sample exhibited a TL glow curve peaked around 537 K and a small shoulder about 411 K and a linear dose behavior in the 10-60 Gy dose range. In contrast, the undoped specimen showed a 591 K peaked TL glow curve and linear dose response for 10-100 Gy doses. However, both samples displayed a non-linear dose response for doses higher than 100 Gy. The doping effects seem to cause a higher TL efficiency, which may be attributed to the differences in the diamond bonding and amorphous carbon on the CVD samples as well as to the presence of nitrogen. In addition, the nitrogen content may produce some structural and morphological surface effects, which may account for the distinctive TL features and dose response of the diamond samples

  2. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    Science.gov (United States)

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-08-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

  3. Advances in highly doped upconversion nanoparticles.

    Science.gov (United States)

    Wen, Shihui; Zhou, Jiajia; Zheng, Kezhi; Bednarkiewicz, Artur; Liu, Xiaogang; Jin, Dayong

    2018-06-20

    Lanthanide-doped upconversion nanoparticles (UCNPs) are capable of converting near-infra-red excitation into visible and ultraviolet emission. Their unique optical properties have advanced a broad range of applications, such as fluorescent microscopy, deep-tissue bioimaging, nanomedicine, optogenetics, security labelling and volumetric display. However, the constraint of concentration quenching on upconversion luminescence has hampered the nanoscience community to develop bright UCNPs with a large number of dopants. This review surveys recent advances in developing highly doped UCNPs, highlights the strategies that bypass the concentration quenching effect, and discusses new optical properties as well as emerging applications enabled by these nanoparticles.

  4. Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei

    2015-01-01

    Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....

  5. Highly effective catalytic peroxymonosulfate activation on N-doped mesoporous carbon for o-phenylphenol degradation.

    Science.gov (United States)

    Hou, Jifei; Yang, Shasha; Wan, Haiqin; Fu, Heyun; Qu, Xiaolei; Xu, Zhaoyi; Zheng, Shourong

    2018-04-01

    As a broad-spectrum preservative, toxic o-phenylphenol (OPP) was frequently detected in aquatic environments. In this study, N-doped mesoporous carbon was prepared by a hard template method using different nitrogen precursors and carbonization temperatures (i.e., 700, 850 and 1000 °C), and was used to activate peroxymonosulfate (PMS) for OPP degradation. For comparison, mesoporous carbon (CMK-3) was also prepared. Characterization results showed that the N-doped mesoporous carbon samples prepared under different conditions were perfect replica of their template. In comparison with ethylenediamine (EDA) and dicyandiamide (DCDA) as the precursors, N-doped mesoporous carbon prepared using EDA and carbon tetrachloride as the precursors displayed a higher catalytic activity for OPP degradation. Increasing carbonization temperature of N-doped mesoporous carbon led to decreased N content and increased graphitic N content at the expense of pyridinic and pyrrolic N. Electron paramagnetic resonance (EPR) analysis showed that PMS activation on N-doped mesoporous carbon resulted in highly active species and singlet oxygen, and catalytic PMS activation for OPP degradation followed a combined radical and nonradical reaction mechanism. Increasing PMS concentration enhanced OPP degradation, while OPP degradation rate was independent on initial OPP concentration. Furthermore, the dependency of OPP degradation on PMS concentration followed the Langmuir-Hinshelwood model, reflecting that the activation of adsorbed PMS was the rate controlling step. Based on the analysis by time-of-flight mass spectrometry, the degradation pathway of OPP was proposed. Copyright © 2018 Elsevier Ltd. All rights reserved.

  6. Nanoparticles doped film sensing based on terahertz metamaterials

    Science.gov (United States)

    Liu, Weimin; Fan, Fei; Chang, Shengjiang; Hou, Jiaqing; Chen, Meng; Wang, Xianghui; Bai, Jinjun

    2017-12-01

    A nanoparticles concentration sensor based on doped film and terahertz (THz) metamaterial has been proposed. By coating the nanoparticles doped polyvinyl alcohol (PVA) film on the surface of THz metamaterial, the effects of nanoparticle concentration on the metamaterial resonances are investigated through experiments and numerical simulations. Results show that resonant frequency of the metamaterial linearly decreases with the increment of doping concentration. Furthermore, numerical simulations illustrate that the redshift of resonance results from the changes of refractive index of the doped film. The concentration sensitivity of this sensor is 3.12 GHz/0.1%, and the refractive index sensitivity reaches 53.33 GHz/RIU. This work provides a non-contact, nondestructive and sensitive method for the detection of nanoparticles concentration and brings out a new application on THz film metamaterial sensing.

  7. Doping enhanced barrier lowering in graphene-silicon junctions

    Science.gov (United States)

    Zhang, Xintong; Zhang, Lining; Chan, Mansun

    2016-06-01

    Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

  8. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Kumar, A.; Voevodin, A.A.; Paul, R.; Altfeder, I.; Zemlyanov, D.; Zakharov, D.N.; Fisher, T.S.

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface

  9. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A., E-mail: kumar50@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, A.A. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Paul, R. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Altfeder, I. [Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Zemlyanov, D.; Zakharov, D.N. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Fisher, T.S., E-mail: tsfisher@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States)

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface.

  10. Doping dependence of magnetic and transport properties in single crystalline Co-doped BaFe2As2

    International Nuclear Information System (INIS)

    Nakajima, Yasuyuki; Taen, Toshihiro; Tamegai, Tsuyoshi

    2010-01-01

    We report the doping dependence of transport and magnetic properties in Co-doped BaFe 2 As 2 . With increasing Co concentration x, structural and magnetic transitions are suppressed and superconductivity emerges in the range of 0.3 c at low temperatures and low fields obtained from bulk magnetization is reasonably large and the doping dependence shows a maximum at x∼0.07 similar to T c . The values of J c at low temperatures reach about 1x10 6 A/cm 2 around the optimally doped region, which is potentially attractive for technological applications.

  11. Electrical properties of lightly Ga-doped ZnO nanowires

    Science.gov (United States)

    Alagha, S.; Heedt, S.; Vakulov, D.; Mohammadbeigi, F.; Senthil Kumar, E.; Schäpers, Th; Isheim, D.; Watkins, S. P.; Kavanagh, K. L.

    2017-12-01

    We investigated the growth, crystal structure, elemental composition and electrical transport characteristics of ZnO nanowires, a promising candidate for optoelectronic applications in the UV-range. Nominally-undoped and Ga-doped ZnO nanowires were grown by metal-organic chemical vapor deposition. Photoluminescence measurements confirmed the incorporation of Ga via donor-bound exciton emission. With atom-probe tomography we estimated an upper limit of the Ga impurity concentration ({10}18 {{cm}}-3). We studied the electrical transport characteristics of these nanowires with a W-nanoprobe technique inside a scanning electron microscope and with lithographically-defined contacts allowing back-gated measurements. An increase in apparent resistivity by two orders of magnitude with decreasing radius was measured with both techniques with a much larger distribution width for the nanoprobe method. A drop in the effective carrier concentration and mobility was found with decreasing radius which can be attributed to carrier depletion and enhanced scattering due to surface states. Little evidence of a change in resistivity was observed with Ga doping, which indicates that the concentration of native or background dopants is higher than the Ga doping concentration.

  12. High yield and facile microwave-assisted synthesis of conductive H_2SO_4 doped polyanilines

    International Nuclear Information System (INIS)

    Gizdavic-Nikolaidis, Marija R.; Jevremovic, Milutin M.; Milenkovic, Maja; Allison, Morgan C.; Stanisavljev, Dragomir R.; Bowmaker, Graham A.; Zujovic, Zoran D.

    2016-01-01

    The microwave-assisted synthesis of polyaniline (PANI) was performed using ammonium persulphate (APS) as oxidizing agent in 0.5 M–2.5 M concentration range of aqueous sulphuric acid (H_2SO_4) at 93 W applied microwave power of 10 min duration. The microwave (MW) synthesized PANIs had 3 times higher yield in comparison to PANI samples prepared using a classical method, CS (0 W MW power) at the same temperature for 10 min synthesis duration period. Fourier Transform Infrared (FTIR) and UV–Vis spectroscopies confirmed the formation of PANI structure in all products. The influence of H_2SO_4 acid dopant on the spin concentration of MW and CS H_2SO_4 doped PANI samples were examined by EPR spectroscopy, while the morphological characteristics were investigated by using scanning electron microscopy (SEM). XRD results showed amorphous phases in both MW and CS H_2SO_4 doped PANI samples. Conductivity measurements revealed ∼1.5 times higher conductivity values for MW H_2SO_4 doped PANI samples in comparison with PANI samples prepared by the CS method under same condition. The influence of sulfate anion in comparison to chloride anion as a dopant on morphological, dopant levels and conductivity properties of MW PANI samples were also investigated. - Highlights: • Nanoporous microwave synthesized doped polyanilines as chemical sensor material. • Morphology and physical properties of polyanilines depend on acid concentration. • Spin concentration is determined by the nature of the polyaniline synthesis.

  13. Mechanism of luminescent emission in BaY2F8 scintillators doped with rare earths

    International Nuclear Information System (INIS)

    Santos, Ana Carolina de Mello

    2013-01-01

    In this work samples of Barium Yttrium Fluoride (BaY 2 F 8 -BaYF) doped with different concentrations of Tb 3+ , Er 3+ , Tm 3+ e Nd 3+ ions were characterized, aiming their application in radiation detection devices using their scintillating properties. Two types of samples were produced, polycrystalline samples, obtained via solid state reaction and single crystals, obtained via the floating zone melting method. The radioluminescence measurements (RL) revealed that the samples doped with 2.0 or 3.0 % Tb showed RL intensity at 545 nm two times higher than samples of CsI:Tl, although the total scintillation yield was smaller when compared to this commercial scintillator. Thermoluminescence (TL) results showed that all doped samples exhibited the same peak at 123°C, which is characteristic of the matrix (BaY 2 F 2 ). Comparison of the areas under the TL and RL curves for Tb 3+ and Nd 3+ doped BaYF revealed that the trapping centers are competing with the scintillation of the samples. However, this was not true for the Er 3+ and Tm 3+ doped samples and it was found that the scintillation yield is independent of the trap concentration up to a certain concentration limit. From this point on, the scintillation yields started increasing as the trap concentration increased. The radiation damage defects in BaYF:Tb 3+ were studied via optical absorption (OA) and correlated with TL, showing that trapping centers are connected to the color centers. All samples exhibited different luminescence decay processes with time constants ranging from microseconds, for the fast processes, milliseconds, for the intermediate ones, and phosphorescent processes with decay time on the order of seconds. For the Nd 3+ doped samples, very fast decay process was also found with time constants of about 60ns and that is an indication that this material can be used in fast detection systems, although its scintillation efficiency was weak. The combined results obtained with these techniques together

  14. On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

    International Nuclear Information System (INIS)

    Vimalkumar, T.V.; Poornima, N.; Jinesh, K.B.; Kartha, C. Sudha; Vijayakumar, K.P.

    2011-01-01

    In this paper we present studies on ZnO thin films (prepared using Chemical Spray pyrolysis (CSP) technique) doped in two different ways; in one set, 'single doping' using indium was done while in the second set, 'co-doping' using indium and fluorine was adopted. In the former case, effect of in-situ as well as ex-situ doping using In was analyzed. Structural (XRD studies), electrical (I-V measurements) and optical characterizations (through absorption, transmission and photoluminescence studies) of the films were done. XRD analysis showed that, for spray-deposited ZnO films, ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, while in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes; however for higher percentage of in-situ doping, orientation of grains changed from (0 0 2) plane to (1 0 1) plane. The co-doped films had (0 0 2) and (1 0 1) planes. Lowest resistivity (2 x 10 -3 Ω cm) was achieved for the films, doped with 1% Indium through in-situ method. Photoluminescence (PL) emissions of ex-situ doped and co-doped samples had two peaks; one was the 'near band edge' emission (NBE) and the other was the 'blue-green' emission. But interestingly the PL emission of in-situ doped samples exhibited only the 'near band edge' emission. Optical band gap of the films increased with doping percentage, in all cases of doping.

  15. Paramagnetic behavior of Co doped TiO{sub 2} nanocrystals controlled by self-purification mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Anitha, B. [Centre for Nanoscience and Nanotechnology, University of Kerala, Kariavattom, Thiruvananthapuram 695 581 (India); Khadar, M. Abdul, E-mail: mabdulkhadar@rediffmail.com [Centre for Nanoscience and Nanotechnology, University of Kerala, Kariavattom, Thiruvananthapuram 695 581 (India); Banerjee, Alok [UGC-DAE Consortium for Scientific Research (CSR), Khandwa Road, Indore 452 001 (India)

    2016-07-15

    Doping in nanocrystals is a challenging process because of the self- purification mechanism which tends to segregate out the dopants resulting in a greater dopant concentration near the surface than at the interior of nanocrystals. In the present work nanocrystals of TiO{sub 2} doped with different atom % of Co were synthesized by peroxide gel method. XRD analysis confirmed the tetragonal anatase structure and HRTEM images showed the rod-like morphology of the samples. Raman modes of anatase phase of TiO{sub 2} along with weak intensity peaks of Co{sub 3}O{sub 4} for higher Co dopant concentrations were observed for the samples. EPR measurements revealed the presence of cobalt in +2 oxidation state in the TiO{sub 2} matrix. SQUID measurements indicated paramagnetic behavior of the Co doped TiO{sub 2} nanocrystals. The paramagnetic behavior is attributed to an increased concentration of Co{sup 2+} ions and an increased presence of Co{sub 3}O{sub 4} phase near the surface of the TiO{sub 2} nanocrystals due to self-purification mechanism. - Graphical abstract: Variation of the intensity ratios of XRD peaks as a function of atomic ratio of Co. Inset: variation of structure factor for (101) reflection as a function of atomic ratio of Co. Display Omitted - Highlights: • Co doped TiO{sub 2} nanocrystals were synthesized by peroxide gel method. • HRTEM images showed Co doped TiO{sub 2} nanocrystals to be rod-like. • EPR spectra showed +2 oxidation states for Co in the samples. • Co doped TiO{sub 2} nanocrystals showed paramagnetic behavior.

  16. Comparative study of (N, Fe) doped TiO{sub 2} photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Larumbe, S., E-mail: silvia.larumbe@unavarra.es [Departamento Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Monge, M. [Departamento de Química, Universidad de la Rioja, Centro de Investigación en Síntesis Química (CISQ), Complejo Científico Tecnológico, 26006 Logroño (Spain); Gómez-Polo, C. [Departamento Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain)

    2015-02-01

    Highlights: • Fe, N doped TiO{sub 2} nanoparticles were synthesized by sol–gel. • The nitrogen content controlled the mean size of nanoparticles and afterwards the modification of cell parameters with respect the undoped sample. • Both doping elements induced the increase of the anatase-rutile transition temperature. • A red-shift is observed in the absorption spectra with the introduction of both elements. • An improvement of photocatalytic activity is observed with the introduction of nitrogen under UV and Visible light. However for higher concentrations a decrease in kinetic constants was observed as consequence of the oxygen vacancies acting as recombination centers. On the contrary, a deterioration of photocatalytic efficiency is found for the Fe doped samples. • A correlation between magnetic behavior and photocatalytic activity was found. - Abstract: The effect of N and Fe doping on the structural, optical, photocatalytic and magnetic properties of TiO{sub 2} nanoparticles is analyzed. Undoped, N and Fe doped TiO{sub 2} nanoparticles were synthesized by sol–gel method. Titanium tetraisopropoxide (TTIP) was used as the alkoxyde precursor and iron (III) nitrate and urea were the employed precursors to obtain Fe and N doped TiO{sub 2} nanoparticles, respectively. Differential Scanning Calorimetry (DSC) and Thermogravimetrical Analysis (TGA) enabled the analysis of the thermal decomposition process and the final calcination temperature. X-Ray Diffraction patterns of the calcined nanoparticles displayed a monophasic anatase structure in all the samples with mean crystallite diameter around 4–6 nm. The introduction of Fe or N induced a red-shift in the absorption spectra. Such a red-shift is characterized by a decrease in the band-gap energy and the occurrence of an absorption (Urbach) tail in the visible region. Finally, the photocatalytic efficiency was evaluated under UV and Visible light, obtaining an improvement of the kinetic constants in

  17. Epidemiological analysis of doping offences in the professional tennis circuit

    Directory of Open Access Journals (Sweden)

    Maquirriain Javier

    2010-12-01

    Full Text Available Abstract Introduction Tennis is a professional sport under a strict anti-doping control. However, since the first violation of the code, the positive cases have not been statistically studied. The objective of this study was to analyze doping offences in the international professional tennis circuit. Methods All offences to the Doping Code committed by tennis players during 2003-2009 were collected from the ITF official webpage, registered and analyzed. Results An average of 1905.7 (±174.5 samples was obtained per year. Fifty-two doping offences were reported and the overall incidence of positive doping samples accounted for 0.38% and 7.4 (±4.1 cases/year. Male players showed higher incidence doping offences than females (p = 0.0004. The incidence in wheelchair players was higher than in non-handicapped subjects (p = 0.0001 Banned substance distribution showed: stimulants 32.69%, cannabis 23.07%; anabolic 11.53%, diuretics and masking agents 11.53, β2-agonists 9.61%; corticosteroids 3.84%, others 3.84%. The overall incidence of 'social drugs' (cocaine, cannabis was 36.53%. All EPO and blood samples were normal, while the incidence of 'out-of-competition' offences was 0.12%. The lower incidence of doping was found in Grand Slams tournaments. Conclusions The incidence of positive doping samples among professional tennis players is quite low supporting the assumption that there is no evidence of systematic doping in Tennis. "Social drugs" misuse constitutes the main problem of doping in tennis. Male and wheelchair tennis players showed higher risk of infringing the doping code than their females and non-handicapped counterparts. Findings of this study should help to determine the direction of the ongoing strategy in the fight against doping in Tennis.

  18. Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

    2015-02-15

    Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

  19. Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoyer, Karoline L.; Hubmann, Andreas H.; Klein, Andreas [Surface Science Division, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

    2017-02-15

    Ge-doped In{sub 2}O{sub 3} thin films prepared by magnetron sputtering are studied using photoelectron spectroscopy and Hall effect measurements. Carrier conductivities of up to 8.35 x 10{sup 3} S cm{sup -1} and carrier mobilities of up to 57 cm{sup 2} V{sup -1}s{sup -1} are observed. The surface Ge concentration is enhanced by a factor of 2-3 compared to the concentration in the interior of the films. The surface Ge concentration increases with more oxidizing deposition conditions, in opposite to what has been reported for Sn-doped In{sub 2}O{sub 3}. Ge-doped In{sub 2}O{sub 3} films exhibit higher work functions as compared to Sn-doped films, in particular at oxidizing conditions. This is attributed to the formation of a GeO{sub 2} surface phase. While segregation of Sn reduces the carrier mobility due to grain boundary scattering, Ge segregation does not show such an effect. The differences are attributed to the different oxidation states of the segregated dopants, in agreement with the observed dependence of segregation on oxygen activity. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Radiation effect of doping and bias conditions on NPN bipolar junction transistors

    International Nuclear Information System (INIS)

    Xi Shanbin; Wang Yiyuan; Xu Fayue; Zhou Dong; Li Ming; Wang Fei; Wang Zhikuan; Yang Yonghui; Lu Wu

    2011-01-01

    In this paper,we investigate 60 Co γ-ray irradiation effects and annealing behaviors of NPN bipolar junction transistors of the same manufacturing technology but different doping concentrations. The transistors of different doping concentrations differ in responses of the radiation effect. More degradation was observed with the transistors of low concentration-doped NPN transistors than the high concentration-doped NPN transistors. The results also demonstrate that reverse-biased transistors are more sensitive to radiation than the forward-biased ones. Mechanisms of the radiation responses are analyzed. (authors)

  1. Higher intake of vitamin B-6 and dairy products and lower intake of green and oolong tea are independently associated with lower serum homocysteine concentration in young Japanese women.

    Science.gov (United States)

    Murakami, Kentaro; Sasaki, Satoshi; Uenishi, Kazuhiro

    2013-08-01

    Little is known about the relation of modifiable dietary factors to circulating homocysteine concentrations, particularly in young adults and non-Western populations. We investigated the hypothesis that intakes of nutrients and foods are associated with serum homocysteine concentration in a group of young Japanese women. This cross-sectional study included 1050 female Japanese dietetic students aged 18 to 22 years. Dietary intake was assessed using a validated, self-administered, comprehensive diet history questionnaire. Fasting blood samples were collected, and serum homocysteine concentrations were measured. Adjustment was made for survey year, region, municipality level, current smoking, current alcohol drinking, dietary supplement use, physical activity, body mass index, energy intake, and intakes of other nutrients or foods. After adjustment for nondietary confounding factors, intakes of all B vitamins (folate, vitamin B-6, vitamin B-12, and riboflavin) were inversely associated with homocysteine concentration. However, only vitamin B-6 remained significant after further adjustment for other B vitamins. Marine-origin n-3 polyunsaturated fatty acid intake showed an inverse association, but this was not independent of intakes of B vitamins. For foods, pulses, fish and shellfish, and vegetables were independently and inversely associated with homocysteine concentration, but these associations disappeared after adjustment for intakes of other foods. Conversely, an inverse association for dairy products and a positive association for green and oolong tea remained even after adjustment for other foods. To conclude, in a group of young Japanese women, higher intake of vitamin B-6 and dairy products and lower intake of green and oolong tea were independently associated with lower serum homocysteine concentration. Copyright © 2013 Elsevier Inc. All rights reserved.

  2. Synthesis, characterization and photocatalytic activity of porous manganese oxide doped titania for toluene decomposition

    International Nuclear Information System (INIS)

    Jothiramalingam, R.; Wang, M.K.

    2007-01-01

    The present study describes the photocatalytic degradation of toluene in gas phase on different porous manganese oxide doped titanium dioxide. As synthesized birnessite and cryptomelane type porous manganese oxide were doped with titania and tested for photocatalytic decomposition of toluene in gas phase. The effects of the inlet concentration of toluene, flow rate (retention time) were examined and the relative humidity was maintained constantly. Thermal and textural characterization of manganese oxide doped titania materials were characterized by X-ray diffraction (XRD), thermogravemetry (TG), BET and TEM-EDAX studies. The aim of the present study is to synthesize the porous manganese oxide doped titania and to study its photocatalytic activity for toluene degradation in gas phase. Cryptomelane doped titania catalyst prepared in water medium [K-OMS-2 (W)] is shown the good toluene degradation with lower catalysts loading compared to commercial bulk titania in annular type photo reactor. The higher photocatalytic activity due to various factors such as catalyst preparation method, experimental conditions, catalyst loading, surface area, etc. In the present study manganese oxide OMS doped titania materials prepared by both aqueous and non-aqueous medium, aqueous medium prepared catalyst shows the good efficiency due to the presence of OH bonded groups on the surface of catalyst. The linear forms of different kinetic equations were applied to the adsorption data and their goodness of fit was evaluated based on the R 2 and standard error. The goodness to the linear fit was observed for Elovich model with high R 2 (≥0.9477) value

  3. Synthesis and photoluminescence of Cr-, Ni-, Co-, and Ti-doped ZnSe nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Huy, Bui The [Anastro Laboratory, Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Nhatrang Institute of Technology and Research Application, 2 Hungvuong, Nhatrang (Viet Nam); Seo, Min-Ho; Kumar, Avvaru Praveen [Anastro Laboratory, Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Jeong, Hyuk [Department of Chemistry, Sookmyung Women’s University, Seoul 140-742 (Korea, Republic of); Lee, Yong-Ill, E-mail: yilee@changwon.ac.kr [Anastro Laboratory, Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of)

    2014-03-05

    Highlights: • The chain length, structure of surfactants operated the size nanoparticles. • Ni{sup 2+}, Co{sup 2+}, Cr{sup 3+}, and Ti{sup 3+} did not create any new centers in the structure of ZnSe. • Doping may have influenced the nanoparticles size because of the Zn replacement. • The TM ions change in ligand field caused the influence on fluorescence intensity. -- Abstract: We developed a facile strategy to synthesize transition metal (TM; Ni, Cr, Co, and Ti)-doped ZnSe nanoparticles (NPs) in aqueous media using a chemical co-precipitation method. Co-precipitation was performed in the presence of one of four different surfactants, namely mercaptoacetic acid (MAA), 3-mercaptopropionic acid (MPA), thioglycerol (TGC), or (3-mercaptopropyl) trimethoxysilane (MPTMS). Surface morphology, chemical, and crystalline properties of the TM-doped ZnSe NPs were studied by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Optical features were characterized by UV–visible and photoluminescence spectroscopies. The influence of various experimental parameters, including the amount of TM and the ratio of precursors, as well as different types of surfactants on the photoluminescence properties of TM-doped ZnSe NPs was investigated systematically. TM-doped ZnSe NPs were excited in the UV region and exhibited photoluminescence in the visible region. Intensity was affected by the concentration of the TM. The results showed that MPA had a stronger influence on photoluminescence than MAA, TGC, and MPTMS. The photoluminescence intensity of TM-doped ZnSe NPs was 30% higher than that of undoped ZnSe NPs.

  4. Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

    Energy Technology Data Exchange (ETDEWEB)

    Sima, M., E-mail: msima@infim.ro [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Mihut, L. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Vasile, E. [University “Politehnica”of Bucharest, Faculty of Applied Chemistry and Material Science, Department of Oxide Materials and Nanomaterials, No. 1-7 Gh. Polizu Street, 011061 Bucharest (Romania); Sima, Ma.; Logofatu, C. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania)

    2015-09-01

    Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn{sup 2+} ions into the Zn{sup 2+} site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn{sup 2+} ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A{sub 1} (LO) vibrational modes, from 482 and 567 cm{sup −1} to 532 and 580 cm{sup −1}, respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm{sup −1} spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm{sup −1} confirms the insertion of Mn{sup 2+} ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn{sup 2+} ions into Zn{sup 2+} site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm{sup −1} at high Mn concentration • Compensation of the oxygen vacancy at higher

  5. Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

    International Nuclear Information System (INIS)

    Sima, M.; Mihut, L.; Vasile, E.; Sima, Ma.; Logofatu, C.

    2015-01-01

    Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn 2+ ions into the Zn 2+ site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn 2+ ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A 1 (LO) vibrational modes, from 482 and 567 cm −1 to 532 and 580 cm −1 , respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm −1 spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm −1 confirms the insertion of Mn 2+ ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn 2+ ions into Zn 2+ site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm −1 at high Mn concentration • Compensation of the oxygen vacancy at higher Mn concentration in ZnO lattice

  6. Measurements of Neuronal Soma Size and Estimated Peptide Concentrations in Addition to Cell Abundance Offer a Higher Resolution of Seasonal and Reproductive Influences of GnRH-I and GnIH in European Starlings.

    Science.gov (United States)

    Amorin, Nelson; Calisi, Rebecca M

    2015-08-01

    Hypothalamic neuropeptides involved in vertebrate reproduction, gonadotropin releasing hormone (GnRH-I) and gonadotropin-inhibitory hormone (GnIH), can vary in the abundance of immunoreactive cells as a function of the reproductive status and nest box occupation of European starlings (Sturnus vulgaris). While using the abundance of cells as an indicator of the activity of neurohormones is informative, incorporating information on cell size (readily observed using immunohistochemistry) can offer a more detailed understanding of environmentally-mediated changes in hormonal dynamics. In this study, we tested the hypothesis that the size of cells' somas and the estimated concentration of peptides in cells immunoreactive (ir) for GnRH-I and GnIH would vary throughout the breeding season and as a function of nest-box status (resident or not). In the absence of a direct assay of protein, we estimated an index of the concentration of hypothalamic peptides via the relative optical density (i.e., the difference between the mean optical density and the optical density of background staining). In support of our hypothesis, we found that GnRH-I- and GnIH-ir soma size and peptide concentration changed both in males and females throughout the breeding season. Somas were largest and estimated peptide concentration was highest mid-season when compared with earlier in the season or to the non-breeding period. For nest-box residents, GnIH-ir soma size and peptide concentration were higher during the middle of the breeding season than earlier in the breeding season, although residence in the nest box was not related to GnRH-I-ir variables. Our results confirm that previously reported changes in cell abundance mimic changes we see in GnRH-I and GnIH-ir soma size and our proxy for peptide concentration. However, investigating changes in the soma of GnRH-I-ir cells revealed a peak in size during the middle of the breeding season, a change not evident when solely examining data on the

  7. Comparative assessment of image quality for coronary CT angiography with iobitridol and two contrast agents with higher iodine concentrations: iopromide and iomeprol. A multicentre randomized double-blind trial

    Energy Technology Data Exchange (ETDEWEB)

    Achenbach, Stephan [Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Department of Cardiology, Erlangen (Germany); Paul, Jean-Francois [Centre Chirurgical Marie Lannelongue, Department of Radiology, Le Plessis Robinson (France); Laurent, Francois [University of Bordeaux, Centre de Recherche Cardio-Thoracique de Bordeaux, U1045, Bordeaux (France); CHU de Bordeaux, Service d' Imagerie Thoracique et Cardiovasculaire, Pessac (France); Becker, Hans-Christoph [University Hospital Grosshadern, Department of Clinical Radiology, Munich (Germany); Rengo, Marco [Sapienza - University of Rome, ICOT Hospital, Department of Radiological Sciences, Oncology and Pathology, Latina (Italy); Caudron, Jerome [University Hospital of Rouen, Department of Radiology, Rouen (France); Leschka, Sebastian [Saint Gallen Hospital, Department of Radiology, Saint Gallen (Switzerland); Vignaux, Olivier [Cochin Hospital, Department of Radiology, Paris (France); Knobloch, Gesine [La Charite, Department of Radiology, Berlin (Germany); Benea, Giorgio [Ospedale del Delta, Ferrara (Italy); Schlosser, Thomas [Elisabeth-Krankenhaus Hospital, Essen (Germany); Andreu, Jordi [Hospital Vall d' Hebron, Barcelona (Spain); Cabeza, Beatriz [Hospital Clinico San Carlos, Madrid (Spain); Jacquier, Alexis [La Timone Adult Hospital, Department of Radiology, Marseille (France); Souto, Miguel [Complejo Hospitalario Universitario, Santiago de Compostela (Spain); Revel, Didier [Louis Pradel Hospital, Department of Radiology, Lyon (France); Qanadli, Salah Dine [University of Lausanne, Department of Radiology, Lausanne (Switzerland); Cademartiri, Filippo [Giovanni XXIII Hospital, Department of Radiology, Monastier di Treviso (Italy); Collaboration: X-ACT Study Group

    2017-02-15

    To demonstrate non-inferiority of iobitridol 350 for coronary CT angiography (CTA) compared to higher iodine content contrast media regarding rate of patients evaluable for the presence of coronary artery stenoses. In this multicentre trial, 452 patients were randomized to receive iobitridol 350, iopromide 370 or iomeprol 400 and underwent coronary CTA using CT systems with 64-detector rows or more. Two core lab readers assessed 18 coronary segments per patient regarding image quality (score 0 = non diagnostic to 4 = excellent quality), vascular attenuation, signal and contrast to noise ratio (SNR, CNR). Patients were considered evaluable if no segment had a score of 0. Per-patient, the rate of fully evaluable CT scans was 92.1, 95.4 and 94.6 % for iobitridol, iopromide and iomeprol, respectively. Non-inferiority of iobitridol over the best comparator was demonstrated with a 95 % CI of the difference of [-8.8 to 2.1], with a pre-specified non-inferiority margin of -10 %. Although average attenuation increased with higher iodine concentrations, average SNR and CNR did not differ between groups. With current CT technology, iobitridol 350 mg iodine/ml is not inferior to contrast media with higher iodine concentrations in terms of image quality for coronary stenosis assessment. (orig.)

  8. Optical properties of tellurium-doped InxGa1-xAsySb1-y epitaxial layers studied by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Diaz-Reyes, J; Cardona-Bedoya, J A; Gomez-Herrera, M L; Herrera-Perez, J L; Riech, I; Mendoza-Alvarez, J G

    2003-01-01

    Controlled doping of quaternary alloys of In x Ga 1-x As y Sb 1-y with tellurium is fundamental to obtain the n-type layers needed for the development of optoelectronic devices based on p-n heterojunctions. InGaAsSb epitaxial layers were grown by liquid phase epitaxy and Te doping was obtained by incorporating small Sb 3 Te 2 pellets in the growth melt. The tellurium doping levels were in the range 10 16 -10 17 cm -3 . We have used low-temperature photoluminescence (PL) spectroscopy to study the influence of the Te donor levels on the radiative transitions shown in the PL spectra. The PL measurements were done by exciting the samples with the 448 nm line of an Ar ion laser with varying excitation powers in the range from 10 to 200 mW. For the low-doped sample the PL spectrum showed a narrow exciton-related peak centred at around 610 meV with a full width at half maximum (FWHM) of about 7 meV which is evidence of the good crystalline quality of the layers. For higher Te doping, the PL spectra show the presence of band-to-band and donor-to-acceptor transitions which overlap as the Te concentration increases. The peak of the PL band shifts to higher energies as Te doping increases due to a band-filling effect as the Fermi level enters into the conduction band. From the peak energy of the PL spectra, and using a model that includes the band-filling and band-shrinkage effects due to the carriers, we have estimated the effective carrier concentration due to doping with Te in the epilayers

  9. The Prevalence and Covariates of Potential Doping Behavior in Kickboxing; Analysis Among High-Level Athletes

    Directory of Open Access Journals (Sweden)

    Sekulic Damir

    2017-10-01

    Full Text Available The official reports on doping behavior in kickboxing are alarming, but there have been no empirical studies that examined this problem directly. The aim of this study was to investigate the prevalence, gender differences and covariates of potential-doping-behavior, in kickboxing athletes. A total of 130 high-level kickboxing athletes (92 males, 21.37 ± 4.83 years of age, 8.39 ± 5.73 years of training experience; 38 women, 20.31 ± 2.94 years of age; 9.84 ± 4.74 years of training experience completed questionnaires to study covariates and potential-doping behavior. The covariates were: sport factors (i.e. experience, success, doping-related factors (i.e. opinion about penalties for doping users, number of doping testing, potential-doping-behavior, etc., sociodemographic variables, task- and ego-motivation, knowledge on sports nutrition, and knowledge on doping. Gender-based differences were established by independent t-tests, and the Mann-Whitney test. Multinomial logistic regression analyses were performed to define the relationships between covariates and a tendency toward potential-doping behavior (positive tendency – neutral – negative tendency. The potential-doping behavior was higher in those athletes who perceived kickboxing as doping contaminated sport. The more experienced kickboxers were associated with positive intention toward potential-doping behavior. Positive intention toward potential-doping behavior was lower in those who had better knowledge on sports nutrition. The task- and ego-motivation were not associated to potential-doping behavior. Because of the high potential-doping-behavior (less than 50% of athletes showed a negative tendency toward doping, and similar prevalence of potential-doping behavior between genders, this study highlights the necessity of a systematic anti-doping campaign in kickboxing. Future studies should investigate motivational variables as being potentially related to doping behavior in younger

  10. The Prevalence and Covariates of Potential Doping Behavior in Kickboxing; Analysis among High-Level Athletes

    Science.gov (United States)

    Sekulic, Damir; Zenic, Natasa; Versic, Sime; Maric, Dora; Gabrilo, Goran; Jelicic, Mario

    2017-01-01

    Abstract The official reports on doping behavior in kickboxing are alarming, but there have been no empirical studies that examined this problem directly. The aim of this study was to investigate the prevalence, gender differences and covariates of potential-doping-behavior, in kickboxing athletes. A total of 130 high-level kickboxing athletes (92 males, 21.37 ± 4.83 years of age, 8.39 ± 5.73 years of training experience; 38 women, 20.31 ± 2.94 years of age; 9.84 ± 4.74 years of training experience) completed questionnaires to study covariates and potential-doping behavior. The covariates were: sport factors (i.e. experience, success), doping-related factors (i.e. opinion about penalties for doping users, number of doping testing, potential-doping-behavior, etc.), sociodemographic variables, task- and ego-motivation, knowledge on sports nutrition, and knowledge on doping. Gender-based differences were established by independent t-tests, and the Mann-Whitney test. Multinomial logistic regression analyses were performed to define the relationships between covariates and a tendency toward potential-doping behavior (positive tendency – neutral – negative tendency). The potential-doping behavior was higher in those athletes who perceived kickboxing as doping contaminated sport. The more experienced kickboxers were associated with positive intention toward potential-doping behavior. Positive intention toward potential-doping behavior was lower in those who had better knowledge on sports nutrition. The task- and ego-motivation were not associated to potential-doping behavior. Because of the high potential-doping-behavior (less than 50% of athletes showed a negative tendency toward doping), and similar prevalence of potential-doping behavior between genders, this study highlights the necessity of a systematic anti-doping campaign in kickboxing. Future studies should investigate motivational variables as being potentially related to doping behavior in younger

  11. Solvothermal syntheses of Bi and Zn co-doped TiO_2 with enhanced electron-hole separation and efficient photodegradation of gaseous toluene under visible-light

    International Nuclear Information System (INIS)

    Li, Juan-Juan; Cai, Song-Cai; Xu, Zhen; Chen, Xi; Chen, Jin; Jia, Hong-Peng; Chen, Jing

    2017-01-01

    Highlights: • Bi-Zn co-doped TiO_2 catalysts were prepared by solvothermal route. • The incorporation of Bi doping into the TiO_2 generates intermediate energy levels. • Bi and Zn doping showed the enhanced absorption in visible-light region. • Zn dopant acts as a mediator of interfacial charge transfer. • TiBi_1_._9_%Zn_1_%O_2 exhibited high photocatalytic degradation for toluene. - Abstract: This study investigated the effects of Bi doped and Bi-Zn co-doped TiO_2 on photodegradation of gaseous toluene. The doped TiO_2 with various concentration of metal was prepared using the solvothermal route and characterized by SEM, XRD, Raman, BET, DRS, XPS, PL and EPR. Their photocatalytic activities under visible-light irradiation were drastically influenced by the dopant content. The results showed that moderate metal doping levels were obviously beneficial for the toluene degradation, while high doping levels suppressed the photocatalytic activity. The photocatalytic degradation of toluene over TiBi_1_._9_%O_2 and TiBi_1_._9_%Zn_1_%O_2 can reach to 51% and 93%, respectively, which are much higher than 25% of TiO_2. Bi doping into TiO_2 lattice generates new intermediate energy level of Bi below the CB edge of TiO_2. The electron excitation from the VB to Bi orbitals results in the decreased band gap, extended absorption of visible-light and thus enhances its photocatalytic efficiency. Zn doping not only further enhances the absorption in this visible-light region, but also Zn dopant exists as the form of ZnO crystallites located on the interfaces of TiO_2 agglomerates and acts as a mediator of interfacial charge transfer to suppress the electron-hole recombination. These synergistic effects are responsible for the enhanced photocatalytic performance.

  12. Doping control in sport

    DEFF Research Database (Denmark)

    Overbye, Marie Birch

    2016-01-01

    Doping testing is a key component enforced by anti-doping authorities to detect and deter doping in sport. Policy is developed to protect athletes' right to participate in doping-free sport; and testing is a key tool to secure this right. Accordingly, athletes' responses to anti-doping efforts...... are important. This article explores how the International Standards for Testing, which face different interpretations and challenges when policy is implemented, are perceived by elite athletes. Particularly, this article aims to investigate how elite athletes perceive the functioning of the testing system (i.......e., the efforts of stakeholders involved in testing) in their own sport both nationally and worldwide. Moreover, it seeks to identify whether specific factors such as previous experience of testing and perceived proximity of doping have an impact on athletes' perceptions of the testing system. The study comprises...

  13. FLUX PINNING EFFECTS IN Ag-DOPED YBCO (123 SUPERCONDUCTOR

    Directory of Open Access Journals (Sweden)

    Madelen Pérez

    2010-07-01

    Full Text Available Polycrystalline samples of Ag+-doped YBCO (123 (YBa2 (Cu1-xAgx3O7-δwith 0≤x≤0.3 were produced by solid state reaction method. The Ag- doped YBCO samples showed higher critical current densities (Jc with a Jc maximum for samples doped with x=0.05. This behavior can be assigned to an increase of pinning forces. The irreversibility temperature (Tirr, also increased in doped samples as a function of Ag content, with the highest temperature for the sample doped with x=0.05, wich correlates well with the observed Jc increasing. However, samples doped with x>0.05 displayed a decreasing of electrical properties (less Tirr, less Jc, etc. atributed to an excess of Ag in the grain boundaries which, reduces the grain sizes and increases the number of weak- links.

  14. The Anti-Doping Movement.

    Science.gov (United States)

    Willick, Stuart E; Miller, Geoffrey D; Eichner, Daniel

    2016-03-01

    Historical reports of doping in sports date as far back as the ancient Greek Olympic Games. The anti-doping community considers doping in sports to be cheating and a violation of the spirit of sport. During the past century, there has been an increasing awareness of the extent of doping in sports and the health risks of doping. In response, the anti-doping movement has endeavored to educate athletes and others about the health risks of doping and promote a level playing field. Doping control is now undertaken in most countries around the world and at most elite sports competitions. As athletes have found new ways to dope, however, the anti-doping community has endeavored to strengthen its educational and deterrence efforts. It is incumbent upon sports medicine professionals to understand the health risks of doping and all doping control processes. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

  15. Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

    KAUST Repository

    Maller, Robert

    2016-05-24

    The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.

  16. Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

    KAUST Repository

    Maller, Robert; Porte, Yoann; Alshareef, Husam N.; McLachlan, Martyn

    2016-01-01

    The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.

  17. Optical Study of Electron-Doped