III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint

Energy Technology Data Exchange (ETDEWEB)

Schnabel, Manuel; Klein, Talysa R.; Jain, Nikhil; Essig, Stephanie; Schulte-Huxel, Henning; Warren, Emily; van Hest, Maikel F. A. M.; Geisz, John; Stradins, Paul; Tamboli, Adele; Rienacker, Michael; Merkle, Agnes; Schmidt, Jan; Brendel, Rolf; Peibst, Robby

2017-07-11

Solar cells made from bulk crystalline silicon (c-Si) dominate the market, but laboratory efficiencies have stagnated because the current record efficiency of 26.3% is already very close to the theoretical limit of 29.4% for a single-junction c-Si cell. In order to substantially boost the efficiency of Si solar cells we have been developing stacked III-V/Si tandem cells, recently attaining efficiencies above 32% in four-terminal configuration. In this contribution, we use state-of-the-art III-V cells coupled with equivalent circuit simulations to compare four-terminal (4T) to three- and two-terminal (3T, 2T) operation. Equivalent circuit simulations are used to show that tandem cells can be operated just as efficiently using three terminals as with four terminals. However, care must be taken not to overestimate 3T efficiency, as the two circuits used to extract current interact, and a method is described to accurately determine this efficiency. Experimentally, a 4T GaInP/Si tandem cell utilizing an interdigitated back contact cell is shown, exhibiting a 4T efficiency of 31.5% and a 2T efficiency of 28.1%. In 3T configuration, it is used to verify the finding from simulation that 3T efficiency is overestimated when interactions between the two circuits are neglected. Considering these, a 3T efficiency approaching the 4T efficiency is found, showing that 3T operation is efficient, and an outlook on fully integrated high-efficiency 3T and 2T tandem cells is given.

Influence of powder particle injection velocity on the microstructure of Al-12Si/SiCp coatings produced by laser cladding

NARCIS (Netherlands)

Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J. Th M.

2009-01-01

The influence of powder particle injection velocity on the microstructure of coatings consisting of an Al-Si matrix reinforced with SiC particles prepared by laser cladding from mixtures of powders of Al-12 wt.% Si alloy and SiC was investigated both experimentally and by modeling. At low injection

Low-velocity Shocks Traced by Extended SiO Emission along the W43 Ridges: Witnessing the Formation of Young Massive Clusters

Science.gov (United States)

Nguyen-Lu'o'ng, Q.; Motte, F.; Carlhoff, P.; Louvet, F.; Lesaffre, P.; Schilke, P.; Hill, T.; Hennemann, M.; Gusdorf, A.; Didelon, P.; Schneider, N.; Bontemps, S.; Duarte-Cabral, A.; Menten, K. M.; Martin, P. G.; Wyrowski, F.; Bendo, G.; Roussel, H.; Bernard, J.-P.; Bronfman, L.; Henning, T.; Kramer, C.; Heitsch, F.

2013-10-01

The formation of high-mass stars is tightly linked to that of their parental clouds. Here, we focus on the high-density parts of W43, a molecular cloud undergoing an efficient event of star formation. Using a column density image derived from Herschel continuum maps, we identify two high-density filamentary clouds, called the W43-MM1 and W43-MM2 ridges. Both have gas masses of 2.1 × 104 M ⊙ and 3.5 × 104 M ⊙ above >10^{23}\\, {{cm}^{-2}} and within areas of ~6 and ~14 pc2, respectively. The W43-MM1 and W43-MM2 ridges are structures that are coherent in velocity and gravitationally bound, despite their large velocity dispersion measured by the N2H+ (1-0) lines of the W43-HERO IRAM large program. Another intriguing result is that these ridges harbor widespread (~10 pc2) bright SiO (2-1) emission, which we interpret to be the result of low-velocity shocks (models to demonstrate that a small percentage (10%) of Si atoms in low-velocity shocks, observed initially in gas phase or in grain mantles, can explain the observed SiO column density in the W43 ridges. The spatial and velocity overlaps between the ridges of high-density gas and the shocked SiO gas suggest that ridges could be forming via colliding flows driven by gravity and accompanied by low-velocity shocks. This mechanism may be the initial conditions for the formation of young massive clusters.

Association behaviour of 241Am(III) on SiO2(amorphous) and SiO2(quartz) colloids

International Nuclear Information System (INIS)

Degueldre, C.; Wernli, B.

1993-01-01

SiO 2 colloids have been identified as a potential vector for enhancing radionuclide transport in granitic groundwater and in concrete pore water. The sorption behaviour of 241 Am(III) on SiO 2 colloids was studied as a function of americium concentration pH (5-12), colloid concentration, ionic strength, temperature and SiO 2 allotropic species. The Am(III) sorption mechanism on amorphous silica is different from that on quartz. For SiO 2(amorphous) solution, the variation of log K p (ml g -1 ) with pH is linear (pH=5-9) with a slope of +1 indicating a one proton exchange mechanism. The colloid concentration (ppm) affects the sorption and log K p 3.7-0.67 log [SiO 2 ] (pH = 6). K p increases insignificantly when the ionic strength decreases. It shows no significant variation, however, with the Am concentration. On amorphous silica, the Am(III) sorption is driven by proton exchange from the silanol groups. For SiO 2 (quartz), log K p is constant over a large range of quartz concentration in suspension and the variation of log K p with pH is about linear (pH = 5-12), with a slope of 0.28, indicating a more complex exchange mechanism. Reactions taking into account the interaction of positive Am(OH) w (3-w)+ species on to the negatively charged quartz surface are suggested. (author)

III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Ringel, Steven [The Ohio State Univ., Columbus, OH (United States); Carlin, John A [The Ohio State Univ., Columbus, OH (United States); Grassman, Tyler [The Ohio State Univ., Columbus, OH (United States)

2018-04-17

This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first

Effect of load and reciprocating velocity on the transition from mild to severe wear behavior of Al-Si-SiCp composites in reciprocating conditions

International Nuclear Information System (INIS)

Rajeev, V.R.; Dwivedi, D.K.; Jain, S.C.

2010-01-01

In the present paper, the effect of normal load and reciprocating velocity on transition from mild to severe wear of A319/15%SiC p , A336/15%SiC p , and A390/15%SiC p composites have been reported. Composites were produced through liquid metal metallurgy route. Adhesive wear behavior of composites was studied under dry reciprocating conditions using indigenously developed reciprocating friction wear test rig conforming to ASTM Standard G133-05. It was found that increase in normal load increases wear rate and depending upon the reciprocating velocity and type of composites, mode of wear changes from mild oxidative to severe metallic wear was noticed. The load corresponding to the transition from mild to severe wear usually termed as transition load was found to decrease with increase in reciprocating velocity and reduction in silicon content in the alloys used for the development of Al-Si-SiC p composites. At 1 m/s reciprocating velocity, the transition load for A319/15%SiC p , A336/15%SiC p and A390/15%SiC p composites were found to be in the range of 60-90 N, 60-105 N and 60-120 N respectively. Scanning electron microscope (SEM) study of wear surface and wear debris were conducted to analyze the mode of wear and operating wear mechanism. Severe wear was characterized by massive plastic deformation and gross material removal while the mild wear was found to be associated with delamination and scoring as main wear mechanisms responsible for material loss. Wear mechanism maps for different Al-(6-18)%Si-15%SiC p composites were proposed in reciprocating contacts.

Abrupt GaP/Si hetero-interface using bistepped Si buffer

Energy Technology Data Exchange (ETDEWEB)

Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

2015-11-09

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

Abrupt GaP/Si hetero-interface using bistepped Si buffer

International Nuclear Information System (INIS)

Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

2015-01-01

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

Velocity-Resolved [Ne III] from X-Ray Irradiated Sz 102 Microjets

Science.gov (United States)

Liu, C.-F.; Shang, H.; Walter, F. M.; Herczeg, G. J.

2014-03-01

Neon emission lines are good indicators of high-excitation regions close to a young stellar system because of their high ionization potentials and large critical densities. We have discovered [Ne III] .3869 emission from the microjet of low-mass young star Sz 102. Spectroastrometric analysis of the two-dimensional [Ne III] spectral image obtained from the archival high-dispersion (R - 33,000) Very Large Telescope/UVES spectra suggests that the emission consists of two velocity components spatially separated by ~ 0.''3. The stronger redshifted component is centered at ~ +21 km s-1 with a line width of ~ 140 km s-1, and the weaker blueshifted component at ~ -90 km s-1 with a larger line width of ~ 190 km s-1. Both components have large line widths that extend across the systemic velocity, suggesting their origin from diverging streamlines of a wide-angle wind. Optical line ratio diagnostics indicate that Sz 102 drives a pair of hot (T . 2 ◊ 104 K) and ionized (ne . 2 ◊ 104 cm-3) jets. The blueshifted jet has on average ~ 50% higher temperature and electron density. We suggest that the jet is ionized by an embedded hard X-ray source close to the driving region. Freezing-in of the ionization state is consistent with the flow speed and the Ne2+ recombination timescales. We postulate that these X-rays originate from hard coronae or stellar flares; the hard (keV) X-ray photons ionize neon in the inner wind, while the soft X-rays are mostly absorbed by the accretion funnel. These postulates await validation from high-sensitivity X-ray and subarcsecond resolution optical observations.

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

Science.gov (United States)

Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M

2011-05-23

We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.

RE-VISIT OF HST FUV OBSERVATIONS OF THE HOT-JUPITER SYSTEM HD 209458: NO Si iii DETECTION AND THE NEED FOR COS TRANSIT OBSERVATIONS

International Nuclear Information System (INIS)

Ballester, G. E.; Ben-Jaffel, L.

2015-01-01

The discovery of O i atoms and C ii ions in the upper atmosphere of HD 209458b, made with the Hubble Space Telescope Imaging Spectrograph (STIS) using the G140L grating, showed that these heavy species fill an area comparable to the planet’s Roche lobe. The derived ∼10% transit absorption depths require super-thermal processes and/or supersolar abundances. From subsequent Cosmic Origins Spectrograph (COS) observations, C ii absorption was reported with tentative velocity signatures, and absorption by Si iii ions was also claimed in disagreement with a negative STIS G140L detection. Here, we revisit the COS data set showing a severe limitation in the published results from having contrasted the in-transit spectrum against a stellar spectrum averaged from separate observations, at planetary phases 0.27, 0.72, and 0.49. We find variable stellar Si iii and C ii emissions that were significantly depressed not only during transit but also at phase 0.27 compared to phases 0.72 and 0.49. Their respective off-transit 7.5% and 3.1% flux variations are large compared to their reported 8.2 ± 1.4% and 7.8 ± 1.3% transit absorptions. Significant variations also appear in the stellar line shapes, questioning reported velocity signatures. We furthermore present archive STIS G140M transit data consistent with no Si iii absorption, with a negative result of 1.7 ± 18.7 including ∼15% variability. Silicon may still be present at lower ionization states, in parallel with the recent detection of extended magnesium, as Mg i atoms. In this frame, the firm detection of O i and C ii implying solar or supersolar abundances contradicts the recent inference of potential 20–125× subsolar metallicity for HD 209458b

RE-VISIT OF HST FUV OBSERVATIONS OF THE HOT-JUPITER SYSTEM HD 209458: NO Si iii DETECTION AND THE NEED FOR COS TRANSIT OBSERVATIONS

Energy Technology Data Exchange (ETDEWEB)

Ballester, G. E. [University of Arizona, Dept. of Planetary Sciences, Lunar and Planetary Laboratory, 1541 E University Blvd., Tucson, AZ 85721-0063 (United States); Ben-Jaffel, L., E-mail: gilda@lpl.arizona.edu, E-mail: bjaffel@iap.fr [UPMC Univ. Paris 06, UMR7095, Institut d’Astrophysique de Paris, F-75014 Paris (France)

2015-05-10

The discovery of O i atoms and C ii ions in the upper atmosphere of HD 209458b, made with the Hubble Space Telescope Imaging Spectrograph (STIS) using the G140L grating, showed that these heavy species fill an area comparable to the planet’s Roche lobe. The derived ∼10% transit absorption depths require super-thermal processes and/or supersolar abundances. From subsequent Cosmic Origins Spectrograph (COS) observations, C ii absorption was reported with tentative velocity signatures, and absorption by Si iii ions was also claimed in disagreement with a negative STIS G140L detection. Here, we revisit the COS data set showing a severe limitation in the published results from having contrasted the in-transit spectrum against a stellar spectrum averaged from separate observations, at planetary phases 0.27, 0.72, and 0.49. We find variable stellar Si iii and C ii emissions that were significantly depressed not only during transit but also at phase 0.27 compared to phases 0.72 and 0.49. Their respective off-transit 7.5% and 3.1% flux variations are large compared to their reported 8.2 ± 1.4% and 7.8 ± 1.3% transit absorptions. Significant variations also appear in the stellar line shapes, questioning reported velocity signatures. We furthermore present archive STIS G140M transit data consistent with no Si iii absorption, with a negative result of 1.7 ± 18.7 including ∼15% variability. Silicon may still be present at lower ionization states, in parallel with the recent detection of extended magnesium, as Mg i atoms. In this frame, the firm detection of O i and C ii implying solar or supersolar abundances contradicts the recent inference of potential 20–125× subsolar metallicity for HD 209458b.

Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

International Nuclear Information System (INIS)

Zhao, W.; Steidl, M.; Paszuk, A.; Brückner, S.; Dobrich, A.; Supplie, O.; Kleinschmidt, P.; Hannappel, T.

2017-01-01

Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H_2. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H_2-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H_2 ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites

International Nuclear Information System (INIS)

Ramos, L E; Degoli, Elena; Cantele, G; Ossicini, Stefano; Ninno, D; Furthmueller, J; Bechstedt, F

2007-01-01

We investigate the incorporation of group-III (B and Al), group-IV (C and Ge), and group-V (N and P) impurities in Si nanocrystallites. The structural features and electronic properties of doped Si nanocrystallites, which are faceted or spherical-like, are studied by means of an ab initio pseudopotential method including spin polarization. Jahn-Teller distortions occur in the neighborhood of the impurity sites and the bond lengths show a dependence on size and shape of the nanocrystallites. We find that the acceptor (group-III) and donor (group-V) levels become deep as the nanocrystallites become small. The energy difference between the spin-up and spin-down levels of group-III and group-V impurities decreases as the size of the Si nanocrystallite increases and tends to the value calculated for Si bulk. Doping with carbon introduces an impurity-related level in the energy gap of the Si nanocrystallites

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

Directory of Open Access Journals (Sweden)

Xianshu eLuo

2015-04-01

Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates

International Nuclear Information System (INIS)

Bietti, S; Somaschini, C; Sanguinetti, S; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

2010-01-01

We show the possibility to integrate high quality III-V quantum nanostructures tunable in shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room temperature, from two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.

TYPE Ia SNe ALONG REDSHIFT: THE R(Si II) RATIO AND THE EXPANSION VELOCITIES IN INTERMEDIATE-z SUPERNOVAE

International Nuclear Information System (INIS)

Altavilla, G.; Ruiz-Lapuente, P.; Balastegui, A.; Mendez, J.; Espana-Bonet, C.; Irwin, M.; Ellis, R. S.; McMahon, R. M.; Walton, N. A.; Folatelli, G.; Goobar, A.; Nobili, S.; Stanishev, V.; Hillebrandt, W.

2009-01-01

We present a study of intermediate-z Type Ia supernovae (SNe Ia) using empirical physical diagrams which permit the investigation of those SNe explosions. This information can be very useful to reduce systematic uncertainties of the Hubble diagram of SNe Ia up to high z. The study of the expansion velocities and the measurement of the ratio R(Si II) allow subtyping of SNe Ia as done in nearby samples. The evolution of this ratio as seen in the diagram R(Si II)-(t) together with R(Si II) max versus (B - V) 0 indicates consistency of the properties at intermediate-z compared with the nearby SNe Ia. At intermediate-z, expansion velocities of Ca II and Si II are found similar to those of the nearby sample. This is found in a sample of six SNe Ia in the range 0.033 ≤z≤ 0.329 discovered within the International Time Programme of SNe Ia for Cosmology and Physics in the spring run of 2002. 7 The program run under Omega and Lambda from Supernovae and the Physics of Supernova Explosions within the International Time Programme at the telescopes of the European Northern Observatory (ENO) at La Palma (Canary Islands, Spain). Two SNe Ia at intermediate-z were of the cool FAINT type, one being an SN1986G-like object highly reddened. The R(Si II) ratio as well as subclassification of the SNe Ia beyond templates help to place SNe Ia in their sequence of brightness and to distinguish between reddened and intrinsically red supernovae. This test can be done with very high z SNe Ia and it will help to reduce systematic uncertainties due to extinction by dust. It should allow to map the high-z sample into the nearby one.

Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

Energy Technology Data Exchange (ETDEWEB)

Zhao, W.; Steidl, M.; Paszuk, A. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Brückner, S. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany); Dobrich, A. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Supplie, O. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany); Kleinschmidt, P. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Hannappel, T., E-mail: thomas.hannappel@tu-ilmenau.de [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany)

2017-01-15

Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H{sub 2}. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H{sub 2}-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H{sub 2} ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

SPECTROSCOPIC OBSERVATIONS OF SN 2012fr: A LUMINOUS, NORMAL TYPE Ia SUPERNOVA WITH EARLY HIGH-VELOCITY FEATURES AND A LATE VELOCITY PLATEAU

International Nuclear Information System (INIS)

Childress, M. J.; Scalzo, R. A.; Sim, S. A.; Tucker, B. E.; Yuan, F.; Schmidt, B. P.; Cenko, S. B.; Filippenko, A. V.; Silverman, J. M.; Contreras, C.; Hsiao, E. Y.; Phillips, M.; Morrell, N.; Jha, S. W.; McCully, C.; Anderson, J. P.; De Jaeger, T.; Forster, F.; Benetti, S.; Bufano, F.

2013-01-01

We present 65 optical spectra of the Type Ia SN 2012fr, 33 of which were obtained before maximum light. At early times, SN 2012fr shows clear evidence of a high-velocity feature (HVF) in the Si II λ6355 line that can be cleanly decoupled from the lower velocity ''photospheric'' component. This Si II λ6355 HVF fades by phase –5; subsequently, the photospheric component exhibits a very narrow velocity width and remains at a nearly constant velocity of ∼12,000 km s –1 until at least five weeks after maximum brightness. The Ca II infrared triplet exhibits similar evidence for both a photospheric component at v ≈ 12,000 km s –1 with narrow line width and long velocity plateau, as well as an HVF beginning at v ≈ 31,000 km s –1 two weeks before maximum. SN 2012fr resides on the border between the ''shallow silicon'' and ''core-normal'' subclasses in the Branch et al. classification scheme, and on the border between normal and high-velocity Type Ia supernovae (SNe Ia) in the Wang et al. system. Though it is a clear member of the ''low velocity gradient'' group of SNe Ia and exhibits a very slow light-curve decline, it shows key dissimilarities with the overluminous SN 1991T or SN 1999aa subclasses of SNe Ia. SN 2012fr represents a well-observed SN Ia at the luminous end of the normal SN Ia distribution and a key transitional event between nominal spectroscopic subclasses of SNe Ia.

Tannin-immobilized mesoporous silica bead (BT-SiO2) as an effective adsorbent of Cr(III) in aqueous solutions

International Nuclear Information System (INIS)

Huang Xin; Liao Xuepin; Shi Bi

2010-01-01

This study describes a new approach for the preparation of tannin-immobilized adsorbent by using mesoporous silica bead as the supporting matrix. Bayberry tannin-immobilized mesoporous silica bead (BT-SiO 2 ) was characterized by powder X-ray diffraction to verify the crystallinity, field-emission scanning electron microscopy to observe the surface morphology, and surface area and porosity analyzer to measure the mesoporous porous structure. Subsequently, the adsorption experiments to Cr(III) were applied to evaluate the adsorption performances of BT-SiO 2 . It was found that the adsorption of Cr(III) onto BT-SiO 2 was pH-dependent, and the maximum adsorption capacity was obtained in the pH range of 5.0-5.5. The adsorption capacity was 1.30 mmol g -1 at 303 K and pH 5.5 when the initial concentration of Cr(III) was 2.0 mmol L -1 . Based on proton nuclear magnetic resonance (HNMR) analyses, the adsorption mechanism of Cr(III) on BT-SiO 2 was proved to be a chelating interaction. The adsorption kinetic data can be well described using pseudo-first-order model and the equilibrium data can be well fitted by the Langmuir isothermal model. Importantly, no bayberry tannin was leached out during the adsorption process and BT-SiO 2 can simultaneously remove coexisting metal ions from aqueous solutions. In conclusion, this study provides a new strategy for the preparation of tannin-immobilized adsorbents that are highly effective in removal of heavy metals from aqueous solutions.

Collecting the Missing Piece of the Puzzle: The Wind Temperatures of Arcturus (K2 III) and Aldeberan (K5 III)

Science.gov (United States)

Harper, Graham

2017-08-01

Unravelling the poorly understood processes that drive mass loss from red giant stars requires that we empirically constrain the intimately coupled momentum and energy balance. Hubble high spectral resolution observations of wind scattered line profiles, from neutral and singly ionized species, have provided measures of wind acceleration, turbulence, terminal speeds, and mass-loss rates. These wind properties inform us about the force-momentum balance, however, the spectra have not yielded measures of the much needed wind temperatures, which constrain the energy balance.We proposed to remedy this omission with STIS E140H observations of the Si III 1206 Ang. resonance emission line for two of the best studied red giants: Arcturus (alpha Boo: K2 III) and Aldebaran (alpha Tau: K5 III), both of which have detailed semi-empirical wind velocity models. The relative optical depths of wind scattered absorption in Si III 1206 Ang., O I 1303 Ang. triplet., C II 1335 Ang., and existing Mg II h & k and Fe II profiles give the wind temperatures through the thermally controlled ionization balance. The new temperature constraints will be used to test existing semi-empirical models by comparision with multi-frequency JVLA radio fluxes, and also to constrain the flux-tube geometry and wave energy spectrum of magnetic wave-driven winds.

Non-LTE equivalent widths for Si II, III and IV

International Nuclear Information System (INIS)

Becker, S.R.; Butler, K.

1990-01-01

Equivalent widths for a set of Si II, III and IV lines reliable for the determination of temperatures in the B star parameter range are given. They are calculated on a fine grid of LTE line blanketed model atmospheres and lie in the wavelength region from 4070 A to 5070 A

(C III lambda 1909/Si III lambda 1892) ratio as a diagnostic for planetary nebulae and symbiotic stars

International Nuclear Information System (INIS)

Feibelman, W.A.; Aller, L.H.; California Univ., Los Angeles)

1987-01-01

Suitable IUE archival material on planetary nebulae has been examined to determine the log R /F(lambda 1909 C III)/F(lambda 1892 Si III)/ as a discriminant for distinguishing planetary nebulae from symbiotic stars and related objects. The mean value of log R for 73 galactic planetaries is 1.4, while that of extragalactic planetaries appears to be slightly lower, and that for symbiotics is 0.3. The lower value of log R for symbiotics is easily understood as a consequence of their higher densities. A plot of log R versus N-epsilon indicates that 80 percent of the planetaries fall into the range of log R between 1.2 and 1.8, but some of the peculiar and bipolar nebulae fall below log R = 1.2. The corresponding N(C++)/N(Si++) ionic ratio varies over a large range. 53 references

Tannin-immobilized mesoporous silica bead (BT-SiO{sub 2}) as an effective adsorbent of Cr(III) in aqueous solutions

Energy Technology Data Exchange (ETDEWEB)

Huang Xin [Department of Biomass Chemistry and Engineering, Sichuan University, Chengdu 610065 (China); Liao Xuepin, E-mail: xpliao@scu.edu.cn [Department of Biomass Chemistry and Engineering, Sichuan University, Chengdu 610065 (China); Shi Bi [National Engineering Laboratory for Clean Technology of Leather Manufacture, Sichuan University, Chengdu 610065 (China)

2010-01-15

This study describes a new approach for the preparation of tannin-immobilized adsorbent by using mesoporous silica bead as the supporting matrix. Bayberry tannin-immobilized mesoporous silica bead (BT-SiO{sub 2}) was characterized by powder X-ray diffraction to verify the crystallinity, field-emission scanning electron microscopy to observe the surface morphology, and surface area and porosity analyzer to measure the mesoporous porous structure. Subsequently, the adsorption experiments to Cr(III) were applied to evaluate the adsorption performances of BT-SiO{sub 2}. It was found that the adsorption of Cr(III) onto BT-SiO{sub 2} was pH-dependent, and the maximum adsorption capacity was obtained in the pH range of 5.0-5.5. The adsorption capacity was 1.30 mmol g{sup -1} at 303 K and pH 5.5 when the initial concentration of Cr(III) was 2.0 mmol L{sup -1}. Based on proton nuclear magnetic resonance (HNMR) analyses, the adsorption mechanism of Cr(III) on BT-SiO{sub 2} was proved to be a chelating interaction. The adsorption kinetic data can be well described using pseudo-first-order model and the equilibrium data can be well fitted by the Langmuir isothermal model. Importantly, no bayberry tannin was leached out during the adsorption process and BT-SiO{sub 2} can simultaneously remove coexisting metal ions from aqueous solutions. In conclusion, this study provides a new strategy for the preparation of tannin-immobilized adsorbents that are highly effective in removal of heavy metals from aqueous solutions.

The SDSS-III APOGEE radial velocity survey of M dwarfs. I. Description of the survey and science goals

Energy Technology Data Exchange (ETDEWEB)

Deshpande, R.; Bender, C. F.; Mahadevan, S.; Terrien, R. C.; Schneider, D. P.; Fleming, S. W. [Center for Exoplanets and Habitable Worlds, The Pennsylvania State University, University Park, PA 16802 (United States); Blake, C. H. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104 (United States); Carlberg, J. K. [Department of Terrestrial Magnetism, Carnegie Institution of Washington, 5241 Broad Branch Road NW, Washington, DC 20015 (United States); Zasowski, G.; Hearty, F. [University of Virginia, 530 McCormick Road, Charlottesville, VA 22904 (United States); Crepp, J. [Department of Physics, University of Notre Dame, 225 Nieuwland Science Hall, Notre Dame, IN 46556 (United States); Rajpurohit, A. S.; Reylé, C. [Institut UTINAM, CNRS UMR 6213, Observatoire des Sciences de l' Univers THETA Franche-Comt é-Bourgogne, Université de Franche Comté, Observatoire de Besançon, BP 1615, F-25010 Besançon Cedex (France); Nidever, D. L. [Department of Astronomy, University of Michigan, Ann Arbor, MI 48109 (United States); Prieto, C. Allende; Hernández, J. [Instituto de Astrofísica de Canarias, E-38205 La Laguna, Tenerife (Spain); Bizyaev, D. [Apache Point Observatory, P.O. Box 59, Sunspot, NM 88349-0059 (United States); Ebelke, G. [Department of Physics and Astronomy, Texas Christian University, TCU Box 298840, Fort Worth, TX 76129 (United States); Frinchaboy, P. M. [Department of Astronomy, University of Florida, 211 Bryant Space Science Center, Gainesville, FL 32611-2055 (United States); Ge, J. [Department of Astronomy, Ohio State University, Columbus, OH 43210 (United States); and others

2013-12-01

We are carrying out a large ancillary program with the Sloan Digital Sky Survey, SDSS-III, using the fiber-fed multi-object near-infrared APOGEE spectrograph, to obtain high-resolution H-band spectra of more than 1200 M dwarfs. These observations will be used to measure spectroscopic rotational velocities, radial velocities, physical stellar parameters, and variability of the target stars. Here, we describe the target selection for this survey, as well as results from the first year of scientific observations based on spectra that will be publicly available in the SDSS-III DR10 data release. As part of this paper we present radial velocities and rotational velocities of over 200 M dwarfs, with a vsin i precision of ∼2 km s{sup –1} and a measurement floor at vsin i = 4 km s{sup –1}. This survey significantly increases the number of M dwarfs studied for rotational velocities and radial velocity variability (at ∼100-200 m s{sup –1}), and will inform and advance the target selection for planned radial velocity and photometric searches for low-mass exoplanets around M dwarfs, such as the Habitable Zone Planet Finder, CARMENES, and TESS. Multiple epochs of radial velocity observations enable us to identify short period binaries, and adaptive optics imaging of a subset of stars enables the detection of possible stellar companions at larger separations. The high-resolution APOGEE spectra, covering the entire H band, provide the opportunity to measure physical stellar parameters such as effective temperatures and metallicities for many of these stars. At the culmination of this survey, we will have obtained multi-epoch spectra and radial velocities for over 1400 stars spanning the spectral range M0-L0, providing the largest set of near-infrared M dwarf spectra at high resolution, and more than doubling the number of known spectroscopic vsin i values for M dwarfs. Furthermore, by modeling telluric lines to correct for small instrumental radial velocity shifts, we

Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

NARCIS (Netherlands)

Sammak, A.

2012-01-01

Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

Physical studies of strained Si/SiGe heterostructures. From virtual substrates to nanodevices

Energy Technology Data Exchange (ETDEWEB)

Minamisawa, Renato Amaral

2011-10-21

achieving high quality, strained doped layers. The knowledge acquired was further applied in the fabrication of p-MOSFETs using strained Si/strained Si{sub 0.5}Ge{sub 0.5}/SSOI substrates and HfO{sub 2}/TiN gate stacks. Moreover, rare earth GdScO{sub 3} was integrated for the first time into MOSFETs with high mobility strained SiGe channels using a gate-first process. Transistors with channel length ranging from 65 nm to 1.5 {mu}m were fabricated and characterized. The hole mobility and effective velocity were extracted from devices with <110> and <100> channel orientations. The mobility for the <100> direction is 18% higher than for <110> direction. However, this enhancement translates in only 8% increase in effective velocity.

High-throughput screening of effective siRNAs using luciferase-linked chimeric mRNA.

Directory of Open Access Journals (Sweden)

Shen Pang

Full Text Available The use of siRNAs to knock down gene expression can potentially be an approach to treat various diseases. To avoid siRNA toxicity the less transcriptionally active H1 pol III promoter, rather than the U6 promoter, was proposed for siRNA expression. To identify highly efficacious siRNA sequences, extensive screening is required, since current computer programs may not render ideal results. Here, we used CCR5 gene silencing as a model to investigate a rapid and efficient screening approach. We constructed a chimeric luciferase-CCR5 gene for high-throughput screening of siRNA libraries. After screening approximately 900 shRNA clones, 12 siRNA sequences were identified. Sequence analysis demonstrated that most (11 of the 12 sequences of these siRNAs did not match those identified by available siRNA prediction algorithms. Significant inhibition of CCR5 in a T-lymphocyte cell line and primary T cells by these identified siRNAs was confirmed using the siRNA lentiviral vectors to infect these cells. The inhibition of CCR5 expression significantly protected cells from R5 HIV-1JRCSF infection. These results indicated that the high-throughput screening method allows efficient identification of siRNA sequences to inhibit the target genes at low levels of expression.

High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

Science.gov (United States)

Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

2018-03-01

The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

Science.gov (United States)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p

In situ observation of self-propagating high temperature syntheses of Ta5Si3, Ti5Si3 and TiB2 by proton and X-ray radiography

Science.gov (United States)

Bernert, T.; Winkler, B.; Haussühl, E.; Trouw, F.; Vogel, S. C.; Hurd, A. J.; Smilowitz, L.; Henson, B. F.; Merrill, F. E.; Morris, C. L.; Mariam, F. G.; Saunders, A.; Juarez-Arellano, E. A.

2013-08-01

Self-propagating high temperature reactions of tantalum and titanium with silicon and titanium with boron were studied using proton and X-ray radiography, small-angle neutron scattering, neutron time-of-flight, X-ray and neutron diffraction, dilatometry and video recording. We show that radiography allows the observation of the propagation of the flame front in all investigated systems and the determination of the widths of the burning zones. X-ray and neutron diffraction showed that the reaction products consisted of ≈90 wt% of the main phase and one or two secondary phases. For the reaction 5Ti + 3Si → Ti5Si3 flame front velocities of 7.1(3)-34.2(4) mm/s were determined depending on the concentration of a retardant added to the starting material, the geometry and the green density of the samples. The flame front width was determined to be 1.17(4)-1.82(8) mm and depends exponentially on the flame front velocity. Similarly, for the reaction Ti + 2B → TiB2 flame front velocities of 15(2)-26.6(4) mm/s were determined, while for a 5Ta + 3Si → Ta5Si3 reaction the flame front velocity was 7.05(4) mm/s. The micro structure of the product phase Ta5Si3 shows no texture. From SANS measurements the dependence of the specific surface of the product phase on the particle sizes of the starting materials was studied.

Auditory velocity discrimination in the horizontal plane at very high velocities.

Science.gov (United States)

Frissen, Ilja; Féron, François-Xavier; Guastavino, Catherine

2014-10-01

We determined velocity discrimination thresholds and Weber fractions for sounds revolving around the listener at very high velocities. Sounds used were a broadband white noise and two harmonic sounds with fundamental frequencies of 330 Hz and 1760 Hz. Experiment 1 used velocities ranging between 288°/s and 720°/s in an acoustically treated room and Experiment 2 used velocities between 288°/s and 576°/s in a highly reverberant hall. A third experiment addressed potential confounds in the first two experiments. The results show that people can reliably discriminate velocity at very high velocities and that both thresholds and Weber fractions decrease as velocity increases. These results violate Weber's law but are consistent with the empirical trend observed in the literature. While thresholds for the noise and 330 Hz harmonic stimulus were similar, those for the 1760 Hz harmonic stimulus were substantially higher. There were no reliable differences in velocity discrimination between the two acoustical environments, suggesting that auditory motion perception at high velocities is robust against the effects of reverberation. Copyright © 2014 Elsevier B.V. All rights reserved.

SiC/GaN Based Optically Triggered MESFET for High Power Efficiency and High Radiation Resistance Solid State Switch Application for Actuator System

Science.gov (United States)

2016-06-23

designed and nitrogen ion implantation has been performed followed by high temperature annealing . In 2016, the device electrical isolation has been...sputtering physical vapor deposition (PVD). The SiO2 layers were grown onto C-face and Si-face 4H-SiC substrates by different techniques such as wet ...forming the source and drain contact by ion implantation, (ii) the rapid thermal annealing processing, (iii) device isolation by using ion implantation

Reduction of bonding resistance of two-terminal III-V/Si tandem solar cells fabricated using smart-stack technology

Science.gov (United States)

Baba, Masaaki; Makita, Kikuo; Mizuno, Hidenori; Takato, Hidetaka; Sugaya, Takeyoshi; Yamada, Noboru

2017-12-01

This paper describes a method that remarkably reduces the bonding resistance of mechanically stacked two-terminal GaAs/Si and InGaP/Si tandem solar cells, where the top and bottom cells are bonded using a Pd nanoparticle array. A transparent conductive oxide (TCO) layer, which partially covers the surface of the Si bottom cell below the electrodes of the III-V top cell, significantly enhances the fill factor (FF) and cell conversion efficiency. The partial TCO layer reduces the bonding resistance and thus, increases the FF and efficiency of InGaP/Si by factors of 1.20 and 1.11, respectively. Eventually, the efficiency exceeds 15%. Minimizing the optical losses at the bonding interfaces of the TCO layer is important in the fabrication of high-efficiency solar cells. To help facilitate this, the optical losses in the tandem solar cells are thoroughly characterized through optical simulations and experimental verifications.

A fresnoite-structure-related mixed valent titanium(III/IV) chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl: A flux crystal growth route to Ti(III) containing oxides

Energy Technology Data Exchange (ETDEWEB)

Abeysinghe, Dileka; Smith, Mark D.; Loye, Hans-Conrad zur, E-mail: zurloye@mailbox.sc.edu

2017-06-15

Single crystals of mixed valent barium titanium(III/IV) chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09}, were grown in a high temperature molten chloride flux involving an in situ reduction step. The fresnoite structure related Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09} crystallizes in the tetragonal space group P4/mbm with lattice parameters of a=8.6717(2) Å, c=18.6492(5) Å. The title compound exhibits a 3D structure consisting of 2D layers of fused Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} groups and 2D layers of fused Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} groups that are linked via barium atoms. The in situ reduction of Ti(IV) to Ti(III) is achieved via the addition of metallic Mg to the flux to function as the reducing agent. The temperature dependence of the magnetic susceptibility shows simple paramagnetism above 100 K. There is a discontinuity in the susceptibility data below 100 K, which might be due to a structural change that takes place resulting in charge ordering. - Graphical abstract: The fresnoite structure related novel reduced barium titanium chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09}, were synthesized via flux method. An in situ reduction of Ti(IV) to Ti(III) achieved using Mg metal. The 3D structure consists 2D layers of fused Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} and 2D layers of fused Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} connected via barium atoms. Compound shows simple paramagnetism above 100 K. - Highlights: • The fresnoite related Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09} were grown via molten flux method. • The in situ reduction of Ti(IV) to Ti(III) is achieved using metallic Mg. • 2D layers of Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} and Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} connect via Ba atoms. • The magnetic susceptibility shows simple paramagnetism above 100 K.

Narrow-linewidth Si/III-V lasers: A study of laser dynamics and nonlinear effects

Science.gov (United States)

Vilenchik, Yaakov Yasha

Narrow-linewidth lasers play an important role in a wide variety of applications, from sensing and spectroscopy to optical communication and on-chip clocks. Current narrow-linewidth systems are usually implemented in doped fibers and are big, expensive, and power-hungry. Semiconductor lasers compete favorably in size, cost, and power consumption, but their linewidth is historically limited to the sub-MHz regime. However, it has been recently demonstrated that a new design paradigm, in which the optical energy is stored away from the active region in a composite high-Q resonator, has the potential to dramatically improve the coherence of the laser. This work explores this design paradigm, as applied on the hybrid Si/III-V platform. It demonstrates a record sub-KHz white-noise-floor linewidth. It further shows, both theoretically and experimentally, that this strategy practically eliminates Henry's linewidth enhancement by positioning a damped relaxation resonance at frequencies as low as 70 MHz, yielding truly quantum limited devices at frequencies of interest. In addition to this empirical contribution, this work explores the limits of performance of this platform. Here, the effect of two-photon-absorption and free-carrier-absorption are analyzed, using modified rate equations and Langevin force approach. The analysis predicts that as the intra-cavity field intensity builds up in the high-Q resonator, non-linear effects cause a new domain of performance-limiting factors. Steady-state behavior, laser dynamics, and frequency noise performance are examined in the context of this unique platform, pointing at the importance of nonlinear effects. This work offers a theoretical model predicting laser performance in light of nonlinear effects, obtaining a good agreement with experimental results from fabricated high-Q Si/III-V lasers. In addition to demonstrating unprecedented semiconductor laser performance, this work establishes a first attempt to predict and demonstrate

Optical analysis of a III-V-nanowire-array-on-Si dual junction solar cell.

Science.gov (United States)

Chen, Yang; Höhn, Oliver; Tucher, Nico; Pistol, Mats-Erik; Anttu, Nicklas

2017-08-07

A tandem solar cell consisting of a III-V nanowire subcell on top of a planar Si subcell is a promising candidate for next generation photovoltaics due to the potential for high efficiency. However, for success with such applications, the geometry of the system must be optimized for absorption of sunlight. Here, we consider this absorption through optics modeling. Similarly, as for a bulk dual-junction tandem system on a silicon bottom cell, a bandgap of approximately 1.7 eV is optimum for the nanowire top cell. First, we consider a simplified system of bare, uncoated III-V nanowires on the silicon substrate and optimize the absorption in the nanowires. We find that an optimum absorption in 2000 nm long nanowires is reached for a dense array of approximately 15 nanowires per square micrometer. However, when we coat such an array with a conformal indium tin oxide (ITO) top contact layer, a substantial absorption loss occurs in the ITO. This ITO could absorb 37% of the low energy photons intended for the silicon subcell. By moving to a design with a 50 nm thick, planarized ITO top layer, we can reduce this ITO absorption to 5%. However, such a planarized design introduces additional reflection losses. We show that these reflection losses can be reduced with a 100 nm thick SiO 2 anti-reflection coating on top of the ITO layer. When we at the same time include a Si 3 N 4 layer with a thickness of 90 nm on the silicon surface between the nanowires, we can reduce the average reflection loss of the silicon cell from 17% to 4%. Finally, we show that different approximate models for the absorption in the silicon substrate can lead to a 15% variation in the estimated photocurrent density in the silicon subcell.

Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

Directory of Open Access Journals (Sweden)

Hong Yu

2009-04-01

Full Text Available In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.

MEASURING EJECTA VELOCITY IMPROVES TYPE Ia SUPERNOVA DISTANCES

International Nuclear Information System (INIS)

Foley, Ryan J.; Kasen, Daniel

2011-01-01

We use a sample of 121 spectroscopically normal Type Ia supernovae (SNe Ia) to show that their intrinsic color is correlated with their ejecta velocity, as measured from the blueshift of the Si II λ6355 feature near maximum brightness, v SiII . The SN Ia sample was originally used by Wang et al. to show that the relationship between color excess and peak magnitude, which in the absence of intrinsic color differences describes a reddening law, was different for two subsamples split by v SiII (defined as 'Normal' and 'High Velocity'). We verify this result, but find that the two subsamples have the same reddening law when extremely reddened events (E(B - V)>0.35 mag) are excluded. We also show that (1) the High-Velocity subsample is offset by ∼0.06 mag to the red from the Normal subsample in the (B max - V max )-M V plane, (2) the B max - V max cumulative distribution functions of the two subsamples have nearly identical shapes, but the High-Velocity subsample is offset by ∼0.07 mag to the red in B max - V max , and (3) the bluest High-Velocity SNe Ia are ∼0.10 mag redder than the bluest Normal SNe Ia. Together, this evidence indicates a difference in intrinsic color for the subsamples. Accounting for this intrinsic color difference reduces the scatter in Hubble residuals from 0.190 mag to 0.130 mag for SNe Ia with A V ∼ V found in large SN Ia samples. We explain the correlation between ejecta velocity and color as increased line blanketing in the High-Velocity SNe Ia, causing them to become redder. We discuss some implications of this result, and stress the importance of spectroscopy for future SN Ia cosmology surveys, with particular focus on the design of WFIRST.

Enhanced direct-gap light emission from Si-capped n+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers.

Science.gov (United States)

Higashitarumizu, Naoki; Ishikawa, Yasuhiko

2017-09-04

Enhanced direct-gap light emission is reported for Si-capped n + -Ge layers on Si after post-growth rapid cyclic annealing (RCA), and impact of non-radiative recombination (NRR) at the Ge/Si interface is discussed toward Ge/Si double heterostructure (DH) lasers. P-doped n + -Ge layer (1 × 10 19 cm -3 , 400 nm) is grown on Si by ultra-high vacuum chemical vapor deposition, followed by a growth of Si capping layer (5 nm) to form a Si/Ge/Si DH structure. Post-growth RCA to eliminate defects in Ge is performed in N 2 at temperatures between 900°C and 780°C, where the annealing time is minimized to be 5 s in each RCA cycle to prevent an out-diffusion of P dopants from the Ge surface. Direct-gap photoluminescence (PL) intensity at 1.6 µm increases with the RCA cycles up to 40, although the threading dislocation density in Ge is not reduced after 3 cycles in the present condition. The PL enhancement is ascribed to the suppression of NRR at the Ge/Si interface, where an intermixed SiGe alloy is formed. For Ge/Si DH lasers, NRR at the Ge/Si interface is found to have a significant impact on the threshold current density Jth. In order to achieve Jth on the order of 1 kA/cm 2 , similar to III-V lasers, the interface recombination velocity S is required below 10 3 cm/s in spite of S as large as 10 5 cm/s at the ordinary defect-rich Ge/Si interface.

Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

1994-01-01

High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

DEFF Research Database (Denmark)

Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

2014-01-01

Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

Energy Technology Data Exchange (ETDEWEB)

Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

2015-04-16

In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

Pastern recognition of clusters formed in 4.1(4.5)A GeV/c 22Ne(28Si) interaction with emulsion using Lobachevsky velocity space

International Nuclear Information System (INIS)

EI-Naghy, A.; AbdeI-Aziz, S.S.; Salah, M.M.

2000-01-01

The experimental data of 4.1(4.5)A GeV/c 22 Ne( 28 Si) emulsion interactions, which has been measured in the laboratory of high energy physics ( LHEP ) at Cairo University , has been utilized in this analysis. In the present paper we propose the use of Bubelev's graphical method to visualize the candidates of cluster formation in nucleus - nucleus interactions. This method is based on the Chernikov geometry formulation of relativistic kinematics in patterns in the Lobachevsky velocity space in which the motion of particles are equivalent to the Lorentz group. The analysis has shown that events which are identified as formation of clusters in 22 Ne( 28 Si) emulsion interactions are well illustrated in the Lobachevsky velocity space using the principle of likeness (closeness). The study will be extended to include other reactions and other types of particles

Evidence for mass loss at moderate to high velocity in Be stars

International Nuclear Information System (INIS)

Snow, T.P. Jr.; Marlborough, J.M.

1976-01-01

Ultraviolet spectra of intermediate resolution have been obtained with Copernicus of 12 objects classified as Be or shell stars, and 19 additional early B dwarfs. Some of these spectra show marked asymmetries in certain resonance lines, especially the Si iv doublet at 1400 A, indicating the presence in some cases of outflowing material with maximum velocities of nearly 1000 km s -1 . Direct evidence for mass loss at these velocities is seen for the first time in dwarf stars as late as B1.5; the only objects later than B0.5 which show this effect are Be or shell stars. Among the stars considered there is a correlation between the presence of mass-loss effects and projected rotational velocity, suggesting that the ultraviolet flux from B1-B2 dwarfs is sufficient to drive high-velocity stellar winds only if rotation effects reduce the effective gravity near the equator. The mass loss rate for one of the most active Be stars, 59 Cyg, is crudely estimated to be 10 -10 --10 -9 M/sub sun/ yr -1 . The data are suggestive that the extended atmospheres associated with Be star phenomena may be formed by mass ejection

Experimental and Numerical Studies on Self-Propagating High-Temperature Synthesis of Ta5Si3 Intermetallics

Directory of Open Access Journals (Sweden)

Chun-Liang Yeh

2015-09-01

Full Text Available Formation of Ta5Si3 by self-propagating high-temperature synthesis (SHS from elemental powder compacts of Ta:Si = 5:3 was experimentally and numerically studied. Experimental evidence showed that the increase of either sample density or preheating temperature led to the increase of combustion wave velocity and reaction temperature. The apparent activation energy, Ea ≈ 108 kJ/mol, was determined for the synthesis reaction. Based upon numerical simulation, the Arrhenius factor of the rate function, K0 = 2.5 × 107 s−1, was obtained for the 5Ta + 3Si combustion system. In addition, the influence of sample density on combustion wave kinetics was correlated with the effective thermal conductivity (keff of the powder compact. By adopting 0.005 ≤ keff/kbulk ≤ 0.016 in the computation model, the calculated combustion velocity and temperature were in good agreement with experimental data of the samples with compaction densities between 35% and 45% theoretical maximum density (TMD.

Surface passivation technology for III-V semiconductor nanoelectronics

International Nuclear Information System (INIS)

Hasegawa, Hideki; Akazawa, Masamichi

2008-01-01

The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

International Nuclear Information System (INIS)

Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

2014-01-01

A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers

Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2014-01-01

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN x ) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH 3 molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN x /P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN x passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN x films. The outstanding results obtained imply that SiN x /P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

International Nuclear Information System (INIS)

Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

2016-01-01

It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

High-velocity frictional properties of gabbro

Science.gov (United States)

Tsutsumi, Akito; Shimamoto, Toshihiko

High-velocity friction experiments have been performed on a pair of hollow-cylindrical specimens of gabbro initially at room temperature, at slip rates from 7.5 mm/s to 1.8 m/s, with total circumferential displacements of 125 to 174 m, and at normal stresses to 5 MPa, using a rotary-shear high-speed friction testing machine. Steady-state friction increases slightly with increasing slip rate at slip rates to about 100 mm/s (velocity strengthening) and it decreases markedly with increasing slip rate at higher velocities (velocity weakening). Steady-state friction in the velocity weakening regime is lower for the non-melting case than the frictional melting case, due perhaps to severe thermal fracturing. A very large peak friction is always recognized upon the initiation of visible frictional melting, presumably owing to the welding of fault surfaces upon the solidification of melt patches. Frictional properties thus change dramatically with increasing displacement at high velocities, and such a non-linear effect must be incorporated into the analysis of earthquake initiation processes.

Southern high-velocity stars

International Nuclear Information System (INIS)

Augensen, H.J.; Buscombe, W.

1978-01-01

Using the model of the Galaxy presented by Eggen, Lynden-Bell and Sandage (1962), plane galactic orbits have been calculated for 800 southern high-velocity stars which possess parallax, proper motion, and radial velocity data. The stars with trigonometric parallaxes were selected from Buscombe and Morris (1958), supplemented by more recent spectroscopic data. Photometric parallaxes from infrared color indices were used for bright red giants studied by Eggen (1970), and for red dwarfs for which Rodgers and Eggen (1974) determined radial velocities. A color-color diagram based on published values of (U-B) and (B-V) for most of these stars is shown. (Auth.)

Controlling the size of InAs quantum dots on Si1-xGex/Si(0 0 1) by metalorganic vapor-phase epitaxy

International Nuclear Information System (INIS)

Kawaguchi, Kenichi; Ebe, Hiroji; Ekawa, Mitsuru; Sugama, Akio; Arakawa, Yasuhiko

2009-01-01

The formation of III-V InAs quantum dots (QDs) on group-IV Si 1-x Ge x /Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increase in the V/III ratio and AsH 3 preflow during the cooling process was found to suppress the formation of giant QDs. It was considered that replacing the H-stabilized SiGe surface with the As-stabilized surface was necessary for increasing the QD nucleation. The size and density of InAs QDs on SiGe were controllable as well as that on III-V semiconductor buffer layers, and InAs QDs with a density as high as 5 x 10 10 cm -2 were obtained.

Integral Field Spectroscopy of Markarian 273: Mapping High-Velocity Gas Flows and an Off-Nucleus Seyfert 2 Nebula.

Science.gov (United States)

Colina; Arribas; Borne

1999-12-10

Integral field optical spectroscopy with the INTEGRAL fiber-based system is used to map the extended ionized regions and gas flows in Mrk 273, one of the closest ultraluminous infrared galaxies. The Hbeta and [O iii] lambda5007 maps show the presence of two distinct regions separated by 4&arcsec; (3.1 kpc) along position angle (P.A.) 240 degrees. The northeastern region coincides with the optical nucleus of the galaxy and shows the spectral characteristics of LINERs. The southwestern region is dominated by [O iii] emission and is classified as a Seyfert 2. Therefore, in the optical, Mrk 273 is an ultraluminous infrared galaxy with a LINER nucleus and an extended off-nucleus Seyfert 2 nebula. The kinematics of the [O iii] ionized gas shows (1) the presence of highly disturbed gas in the regions around the LINER nucleus, (2) a high-velocity gas flow with a peak-to-peak amplitude of 2.4x103 km s-1, and (3) quiescent gas in the outer regions (at 3 kpc). We hypothesize that the high-velocity flow is the starburst-driven superwind generated in an optically obscured nuclear starburst and that the quiescent gas is directly ionized by a nuclear source, similar to the ionization cones typically seen in Seyfert galaxies.

Evidence for mass loss at moderate to high velocity in Be stars

Science.gov (United States)

Snow, T. P., Jr.; Marlborough, J. M.

1976-01-01

Ultraviolet spectra of intermediate resolution have been obtained with Copernicus for 12 objects classified as Be or shell stars and for 19 additional early B dwarfs. Some of these spectra show marked asymmetries in certain resonance lines, especially the Si IV doublet at 1400 A, indicating the presence in some cases of outflowing material with maximum velocities of nearly 1000 km/s. Direct evidence for mass loss at these velocities is seen for the first time in dwarf stars as late as B1.5; the only objects later than B0.5 which show this effect are Be or shell stars. Among the stars considered, there is a correlation between the presence of mass-loss effects and projected rotational velocity, suggesting that the ultraviolet flux from B1-B2 dwarfs is sufficient to drive high-velocity stellar winds only if rotational effects reduce the effective gravity near the equator. The mass-loss rate for one of the most active Be stars, 59 Cyg, is crudely estimated to be one billionth or one ten-billionth of a solar mass per year. The data suggest that the extended atmospheres associated with Be-star phenomena may be formed by mass ejection.

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

Science.gov (United States)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

Indication of the Hanle Effect by Comparing the Scattering Polarization Observed by CLASP in the Ly α and Si iii 120.65 nm Lines

Energy Technology Data Exchange (ETDEWEB)

Ishikawa, R.; Kubo, M.; Kano, R.; Narukage, N.; Bando, T.; Katsukawa, Y.; Giono, G.; Suematsu, Y.; Hara, H. [National Astronomical Observatory of Japan, National Institutes of Natural Science, 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Bueno, J. Trujillo [Instituto de Astrofísica de Canarias, E-38205 La Laguna, Tenerife (Spain); Uitenbroek, H. [National Solar Observatory, 3665 Discovery Drive, Boulder, CO 80303 (United States); Tsuneta, S.; Ishikawa, S.; Shimizu, T.; Sakao, T. [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo, Sagamihara, Kanagawa 252-5210 (Japan); Goto, M. [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki, Gifu 509-5292 (Japan); Winebarger, A.; Kobayashi, K. [NASA Marshall Space Flight Center, ZP 13, Huntsville, AL 35812 (United States); Cirtain, J. [University of Virginia, Department of Astronomy, 530 McCormick Road, Charlottesville, VA 22904 (United States); Champey, P. [University of Alabama in Huntsville, 301 Sparkman Drive, Huntsville, AL 35899 (United States); and others

2017-05-20

The Chromospheric Lyman-Alpha Spectro-Polarimeter is a sounding rocket experiment that has provided the first successful measurement of the linear polarization produced by scattering processes in the hydrogen Ly α line (121.57 nm) radiation of the solar disk. In this paper, we report that the Si iii line at 120.65 nm also shows scattering polarization and we compare the scattering polarization signals observed in the Ly α and Si iii lines in order to search for observational signatures of the Hanle effect. We focus on four selected bright structures and investigate how the U / I spatial variations vary between the Ly α wing, the Ly α core, and the Si iii line as a function of the total unsigned photospheric magnetic flux estimated from Solar Dynamics Observatory /Helioseismic and Magnetic Imager observations. In an internetwork region, the Ly α core shows an antisymmetric spatial variation across the selected bright structure, but it does not show it in other more magnetized regions. In the Si iii line, the spatial variation of U / I deviates from the above-mentioned antisymmetric shape as the total unsigned photospheric magnetic flux increases. A plausible explanation of this difference is the operation of the Hanle effect. We argue that diagnostic techniques based on the scattering polarization observed simultaneously in two spectral lines with very different sensitivities to the Hanle effect, like Ly α and Si iii, are of great potential interest for exploring the magnetism of the upper solar chromosphere and transition region.

Comparative Study of Catalytic Oxidation of Ethanol to Acetaldehyde Using Fe(III Dispersed on Sb2O5 Grafted on SiO2 and on Untreated SiO2 Surfaces

Directory of Open Access Journals (Sweden)

Benvenutti Edilson V.

1998-01-01

Full Text Available Fe(III was supported on Sb(V oxide grafted on the silica gel surface and directly on the silica gel surface using ion-exchange and impregnation processes producing Fe/Sb/SiO2 and Fe/SiO2, respectively. The catalytic conversion of ethanol to acetaldehyde was much more efficient using Fe/Sb/SiO2 than Fe/SiO2 as catalyst. This higher efficiency of the former catalyst takes into account two aspects: a the new phase FeSbO4 formed when Fe/Sb/SiO2 is heat treated and, b it is higher dispersion on the matrix.

High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

KAUST Repository

Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

2015-01-01

Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

Metallographic assessment of Al-12Si high-pressure die casting escalator steps.

Science.gov (United States)

Vander Voort, George Frederic; Suárez-Peña, Beatriz; Asensio-Lozano, Juan

2014-10-01

A microstructural characterization study was performed on high-pressure die cast specimens extracted from escalator steps manufactured from an Al-12 wt.% Si alloy designed for structural applications. Black and white, color light optical imaging and scanning electron microscopy techniques were used to conduct the microstructural analysis. Most regions in the samples studied contained globular-rosette primary α-Al grains surrounded by an Al-Si eutectic aggregate, while primary dendritic α-Al grains were present in the surface layer. This dendritic microstructure was observed in the regions where the melt did not impinge directly on the die surface during cavity filling. Consequently, microstructures in the surface layer were nonuniform. Utilizing physical metallurgy principles, these results were analyzed in terms of the applied pressure and filling velocity during high-pressure die casting. The effects of these parameters on solidification at different locations of the casting are discussed.

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

2016-10-12

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

Three-Dimensional Hetero-Integration of Faceted GaN on Si Pillars for Efficient Light Energy Conversion Devices.

Science.gov (United States)

Kim, Dong Rip; Lee, Chi Hwan; Cho, In Sun; Jang, Hanmin; Jeon, Min Soo; Zheng, Xiaolin

2017-07-25

An important pathway for cost-effective light energy conversion devices, such as solar cells and light emitting diodes, is to integrate III-V (e.g., GaN) materials on Si substrates. Such integration first necessitates growth of high crystalline III-V materials on Si, which has been the focus of many studies. However, the integration also requires that the final III-V/Si structure has a high light energy conversion efficiency. To accomplish these twin goals, we use single-crystalline microsized Si pillars as a seed layer to first grow faceted Si structures, which are then used for the heteroepitaxial growth of faceted GaN films. These faceted GaN films on Si have high crystallinity, and their threading dislocation density is similar to that of GaN grown on sapphire. In addition, the final faceted GaN/Si structure has great light absorption and extraction characteristics, leading to improved performance for GaN-on-Si light energy conversion devices.

Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

International Nuclear Information System (INIS)

Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

2013-01-01

Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

KAUST Repository

Wang, Hsin Ping

2015-05-13

Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

Microstructural optimization of high temperature SiC/SiC composites by nite process

International Nuclear Information System (INIS)

Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

2007-01-01

Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

Microstructural optimization of high temperature SiC/SiC composites by nite process

Energy Technology Data Exchange (ETDEWEB)

Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

2007-07-01

Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

Phase Stability and Thermal Conductivity of Composite Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

Science.gov (United States)

Benkel, Samantha; Zhu, Dongming

2011-01-01

Advanced environmental barrier coatings are being developed to protect SiC/SiC ceramic matrix composites in harsh combustion environments. The current coating development emphasis has been placed on the significantly improved cyclic durability and combustion environment stability in high-heat-flux and high velocity gas turbine engine environments. Environmental barrier coating systems based on hafnia (HfO2) and ytterbium silicate, HfO2-Si nano-composite bond coat systems have been processed and their stability and thermal conductivity behavior have been evaluated in simulated turbine environments. The incorporation of Silicon Carbide Nanotubes (SiCNT) into high stability (HfO2) and/or HfO2-silicon composite bond coats, along with ZrO2, HfO2 and rare earth silicate composite top coat systems, showed promise as excellent environmental barriers to protect the SiC/SiC ceramic matrix composites.

Luminescence and circularly polarized luminescence of macrocyclic Eu(III) and Tb(III) complexes embedded in xerogel and sol-gel SiO2 glasses

International Nuclear Information System (INIS)

Morita, M.; Rau, D.; Kai, T.

2002-01-01

Luminescence, time-resolved luminescence, circularly polarized luminescence (CPL) and decay profiles of Ln(III)(15-crownether-5) (Ln=Ce, Sm, Eu, Tb) and Tb(III)-(R),(S)-cyclen derivative complexes doped in xerogel and sol-gel silica glasses are measured at temperatures down to 10 K to characterize luminescence properties and the electronic structure in the excited states. Luminescence spectral profiles and calculation of crystal field parameters (B 0 (2) ,B 2 (2) ) in the 5 D 0 → 7 F J (J=1,2) transition give evidence of the fact that the pentagonal and planar structure of Eu(III) (15-crownether-5) does hold in xerogel and sol-gel glasses prepared at temperatures below 100 deg. C. As annealing temperatures are increased from 80 deg. C to 750 deg. C, Eu(III) complexes in sol-gel glasses are found to decompose gradually to SiO 2 :Eu 3+ . Tb(III)-(R) and (S)-cyclen derivative complexes in xerogel reveal at room temperature and 10 K sharp CPL spectra with luminescence dissymmetry factors g lum =-0.1 and 0.1, respectively. These complexes doped in sol-gel glasses represent luminescence characteristics of rare earth ions encapsulated in the nano-porous host

Anomalously high yield of doubly charged Si ions sputtered from cleaned Si surface by keV neutral Ar impact

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.; Morita, K. E-mail: k-morita@mail.nucl.nagoya-u.ac.jp; Dhole, S.D.; Ishikawa, D

2001-08-01

The energy spectra of positively charged and neutral species ejected from the Si(1 1 1) surfaces by keV Ar impact have been measured by means of a combined technique of the time-of-flight (TOF) analysis with the multi-photon resonance ionization spectroscopy (MPRIS). It is shown that positively charged species of Si{sup +}, Si{sup 2+} and SiO{sup +} are ejected from the as-cleaned 7x7 surface by 11 keV Ar impact. It is also shown that Ar sputter cleaning of the as-cleaned 7x7 surface for 14 min at the flux of 2x10{sup 13}/cm{sup 2}s removes completely the oxygen impurity and the yields of Si{sup 2+} is comparable to that of Si{sup +}. Moreover, the ionization probability of Si atoms sputtered is shown to be expressed as an exponential function of the inverse of their velocity. The production mechanism for the doubly charged Si ion is discussed based on the L-shell ionization of Si atoms due to quasi-molecule formation in the collisions of the surface atoms with energetic recoils and subsequent Auger decay of the L-shell vacancy to doubly ionized Si ions.

High Velocity Gas Gun

Science.gov (United States)

1988-01-01

A video tape related to orbital debris research is presented. The video tape covers the process of loading a High Velocity Gas Gun and firing it into a mounted metal plate. The process is then repeated in slow motion.

Comparison between Si/SiO_2 and InP/Al_2O_3 based MOSFETs

International Nuclear Information System (INIS)

Akbari Tochaei, A.; Arabshahi, H.; Benam, M. R.; Vatan-Khahan, A.; Abedininia, M.

2016-01-01

Electron transport properties of InP-based MOSFET as a new channel material with Al_2O_3 as a high-k dielectric oxide layer in comparison with Si-based MOSFET are studied by the ensemble Monte Carlo simulation method in which the conduction band valleys in InP are based on three valley models with consideration of quantum effects (effective potential approach). I_d–V_d characteristics for Si-based MOSFET are in good agreement with theoretical and experimental results. Our results show that I_d of InP-based MOSFET is about 2 times that of Si-based MOSFET. We simulated the diagrams of longitudinal and transverse electric fields, conduction band edge, average electron velocity, and average electron energy for Si-based MOSFET and compared the results with those for InP-based MOSFET. Our results, as was expected, show that the transverse electric field, the conduction band edge, the electron velocity, and the electron energy in a channel in the InP-based MOSFET are greater than those for Si-based MOSFET. But the longitudinal electric field behaves differently at different points of the channel.

Sound velocities of the 23 Å phase at high pressure and implications for seismic velocities in subducted slabs

Science.gov (United States)

Cai, N.; Chen, T.; Qi, X.; Inoue, T.; Li, B.

2017-12-01

Dense hydrous phases are believed to play an important role in transporting water back into the deep interior of the Earth. Recently, a new Al-bearing hydrous Mg-silicate, named the 23 Å phase (ideal composition Mg12Al2Si4O16(OH)14), was reported (Cai et al., 2015), which could be a very important hydrous phase in subducting slabs. Here for the first time we report the measurements of the compressional and shear wave velocities of the 23 Å phase under applied pressures up to 14 GPa and room temperature, using a bulk sample with a grain size of less than 20 μm and density of 2.947 g/cm3. The acoustic measurements were conducted in a 1000-ton uniaxial split-cylinder multi-anvil apparatus using ultrasonic interferometry techniques (Li et al., 1996). The pressures were determined in situ by using an alumina buffer rod as the pressure marker (Wang et al., 2015). A dual-mode piezoelectric transducer enabled us to measure P and S wave travel times simultaneously, which in turn allowed a precise determination of the sound velocities and elastic bulk and shear moduli at high pressures. A fit to the acoustic data using finite strain analysis combined with a Hashin-Shtrikman (HS) bounds calculation yields: Ks0 = 113.3 GPa, G0 = 42.8 GPa, and K' = 3.8, G' = 1.9 for the bulk and shear moduli and their pressure derivatives. The velocities (especially for S wave) of this 23 Å phase (ambient Vp = 7.53 km/s, Vs = 3.72 km/s) are lower than those of phase A, olivine, pyrope, etc., while the Vp/Vs ratio (from 2.02 to 1.94, decreasing with increasing pressure) is quite high. These results suggest that a hydrous assemblage containing 23 Å phase should be distinguishable from a dry one at high pressure and temperature conditions relevant to Al-bearing subducted slabs.

Centrifugally cast Zn-27Al-xMg-ySi alloys and their in situ (Mg2Si + Si)/ZA27 composites

International Nuclear Information System (INIS)

Wang Qudong; Chen Yongjun; Chen Wenzhou; Wei Yinhong; Zhai Chunquan; Ding Wenjiang

2005-01-01

Effects of composition, mold temperature, rotating rate and modification on microstructure of centrifugally cast Zn-27Al-xMg-ySi alloys have been investigated. In situ composites of Zn-27Al-6.3Mg-3.7Si and Zn-27Al-9.8Mg-5.2Si alloys were fabricated by centrifugal casting using heated permanent mold. These composites consist of three layers: inner layer segregates lots of blocky primary Mg 2 Si and a litter blocky primary Si, middle layer contains without primary Mg 2 Si and primary Si, outer layer contains primary Mg 2 Si and primary Si. The position, quantity and distribution of primary Mg 2 Si and primary Si in the composites are determined jointly by alloy composition, solidification velocity under the effect of centrifugal force and their floating velocity inward. Na salt modifier can refine grain and primary Mg 2 Si and make primary Mg 2 Si distribute more evenly and make primary Si nodular. For centrifugally cast Zn-27Al-3.2Mg-1.8Si alloy, the microstructures of inner layer, middle layer and outer layer are almost similar, single layer materials without primary Mg 2 Si and primary Si are obtained, and their grain sizes increased with the mold temperature increasing

Superconducting spoke cavities for high-velocity applications

Energy Technology Data Exchange (ETDEWEB)

Hopper, Christopher S. [Old Dominion U.; Delayen, Jean R. [Old Dominion U., JLAB

2013-10-01

To date, superconducting spoke cavities have been designed, developed, and tested for particle velocities up to {beta}{sub 0}~0.6, but there is a growing interest in possible applications of multispoke cavities for high-velocity applications. We have explored the design parameter space for low-frequency, high-velocity, double-spoke superconducting cavities in order to determine how each design parameter affects the electromagnetic properties, in particular the surface electromagnetic fields and the shunt impedance. We present detailed design for cavities operating at 325 and 352 MHz and optimized for {beta}{sub 0}~=0.82 and 1.

SIMULATIONS OF HIGH-VELOCITY CLOUDS. I. HYDRODYNAMICS AND HIGH-VELOCITY HIGH IONS

International Nuclear Information System (INIS)

Kwak, Kyujin; Henley, David B.; Shelton, Robin L.

2011-01-01

We present hydrodynamic simulations of high-velocity clouds (HVCs) traveling through the hot, tenuous medium in the Galactic halo. A suite of models was created using the FLASH hydrodynamics code, sampling various cloud sizes, densities, and velocities. In all cases, the cloud-halo interaction ablates material from the clouds. The ablated material falls behind the clouds where it mixes with the ambient medium to produce intermediate-temperature gas, some of which radiatively cools to less than 10,000 K. Using a non-equilibrium ionization algorithm, we track the ionization levels of carbon, nitrogen, and oxygen in the gas throughout the simulation period. We present observation-related predictions, including the expected H I and high ion (C IV, N V, and O VI) column densities on sightlines through the clouds as functions of evolutionary time and off-center distance. The predicted column densities overlap those observed for Complex C. The observations are best matched by clouds that have interacted with the Galactic environment for tens to hundreds of megayears. Given the large distances across which the clouds would travel during such time, our results are consistent with Complex C having an extragalactic origin. The destruction of HVCs is also of interest; the smallest cloud (initial mass ∼ 120 M sun ) lost most of its mass during the simulation period (60 Myr), while the largest cloud (initial mass ∼ 4 x 10 5 M sun ) remained largely intact, although deformed, during its simulation period (240 Myr).

Preliminary results from the oribiting solar observatory 8: Velocities in the solar chromosphere observed in the Si II lambda1816 line

International Nuclear Information System (INIS)

Chipman, E.G.; Bruner, E.C. Jr.; Shine, R.A.; Lites, B.W.; Rottman, G.J.; Athay, R.G.; White, O.R.

1976-01-01

The University of Colorado instrument on OSO-8 was used to measure repeated line profiles of the Si II lambda1816 line over quiet and active areas of approximately 20'' by 5'' during entire orbits of 60 minutes. Velocity oscillations with periods near 300 s are observed in approximately half of the time series, and periods near 180 s are sometimes observed. Periodic intensity variations are also observed at both of these periods. For both periods, the intensity leads the velocity in phase by approximately 30degree

Si-FeSi2/C nanocomposite anode materials produced by two-stage high-energy mechanical milling

Science.gov (United States)

Yang, Yun Mo; Loka, Chadrasekhar; Kim, Dong Phil; Joo, Sin Yong; Moon, Sung Whan; Choi, Yi Sik; Park, Jung Han; Lee, Kee-Sun

2017-05-01

High capacity retention Silicon-based nanocomposite anode materials have been extensively explored for use in lithium-ion rechargeable batteries. Here we report the preparation of Si-FeSi2/C nanocomposite through scalable a two-stage high-energy mechanical milling process, in which nano-scale Si-FeSi2 powders are besieged by the carbon (graphite/amorphous phase) layer; and investigation of their structure, morphology and electrochemical performance. Raman analysis revealed that the carbon layer structure comprised of graphitic and amorphous phase rather than a single amorphous phase. Anodes fabricated with the Si-FeSi2/C showed excellent electrochemical behavior such as a first discharge capacity of 1082 mAh g-1 and a high capacity retention until the 30th cycle. A remarkable coulombic efficiency of 99.5% was achieved within a few cycles. Differential capacity plots of the Si-FeSi2/C anodes revealed a stable lithium reaction with Si for lithiation/delithiation. The enhanced electrochemical properties of the Si-FeSi2/C nanocomposite are mainly attributed to the nano-size Si and stable solid electrolyte interface formation and highly conductive path driven by the carbon layer.

Film Cooled Recession of SiC/SiC Ceramic Matrix Composites: Test Development, CFD Modeling and Experimental Observations

Science.gov (United States)

Zhu, Dongming; Sakowski, Barbara A.; Fisher, Caleb

2014-01-01

SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. However, the environmental stability of Si-based ceramics in high pressure, high velocity turbine engine combustion environment is of major concern. The water vapor containing combustion gas leads to accelerated oxidation and corrosion of the SiC based ceramics due to the water vapor reactions with silica (SiO2) scales forming non-protective volatile hydroxide species, resulting in recession of the ceramic components. Although environmental barrier coatings are being developed to help protect the CMC components, there is a need to better understand the fundamental recession behavior of in more realistic cooled engine component environments.In this paper, we describe a comprehensive film cooled high pressure burner rig based testing approach, by using standardized film cooled SiCSiC disc test specimen configurations. The SiCSiC specimens were designed for implementing the burner rig testing in turbine engine relevant combustion environments, obtaining generic film cooled recession rate data under the combustion water vapor conditions, and helping developing the Computational Fluid Dynamics (CFD) film cooled models and performing model validation. Factors affecting the film cooled recession such as temperature, water vapor concentration, combustion gas velocity, and pressure are particularly investigated and modeled, and compared with impingement cooling only recession data in similar combustion flow environments. The experimental and modeling work will help predict the SiCSiC CMC recession behavior, and developing durable CMC systems in complex turbine engine operating conditions.

Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates

International Nuclear Information System (INIS)

ZhongZhenyang; Chen Peixuan; Jiang Zuimin; Bauer, Guenther

2008-01-01

Statistical information on GeSi islands grown on two-dimensionally pit-patterned Si substrates at different temperatures is presented. Three growth regimes on patterned substrates are identified: (i) kinetically limited growth at low growth temperatures, (ii) ordered island growth in an intermediate temperature range, and (iii) stochastic island growth within pits at high temperatures. A qualitative model based on growth kinetics is proposed to explain these phenomena. It can serve as a guidance to realize optimum growth conditions for ordered islands on patterned substrates

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

Science.gov (United States)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing

High-velocity runaway stars from three-body encounters

Science.gov (United States)

Gvaramadze, V. V.; Gualandris, A.; Portegies Zwart, S.

2010-01-01

We performed numerical simulations of dynamical encounters between hard, massive binaries and a very massive star (VMS; formed through runaway mergers of ordinary stars in the dense core of a young massive star cluster) to explore the hypothesis that this dynamical process could be responsible for the origin of high-velocity (≥ 200 - 400 km s-1) early or late B-type stars. We estimated the typical velocities produced in encounters between very tight massive binaries and VMSs (of mass of ≥ 200 M⊙) and found that about 3 - 4% of all encounters produce velocities ≥ 400 km s-1, while in about 2% of encounters the escapers attain velocities exceeding the Milky Ways's escape velocity. We therefore argue that the origin of high-velocity (≥ 200 - 400 km s-1) runaway stars and at least some so-called hypervelocity stars could be associated with dynamical encounters between the tightest massive binaries and VMSs formed in the cores of star clusters. We also simulated dynamical encounters between tight massive binaries and single ordinary 50 - 100 M⊙ stars. We found that from 1 to ≃ 4% of these encounters can produce runaway stars with velocities of ≥ 300 - 400 km s-1 (typical of the bound population of high-velocity halo B-type stars) and occasionally (in less than 1% of encounters) produce hypervelocity (≥ 700 km s-1) late B-type escapers.

Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

International Nuclear Information System (INIS)

Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

2001-01-01

The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

High Dynamic Velocity Range Particle Image Velocimetry Using Multiple Pulse Separation Imaging

Directory of Open Access Journals (Sweden)

Tadhg S. O’Donovan

2010-12-01

Full Text Available The dynamic velocity range of particle image velocimetry (PIV is determined by the maximum and minimum resolvable particle displacement. Various techniques have extended the dynamic range, however flows with a wide velocity range (e.g., impinging jets still challenge PIV algorithms. A new technique is presented to increase the dynamic velocity range by over an order of magnitude. The multiple pulse separation (MPS technique (i records series of double-frame exposures with different pulse separations, (ii processes the fields using conventional multi-grid algorithms, and (iii yields a composite velocity field with a locally optimized pulse separation. A robust criterion determines the local optimum pulse separation, accounting for correlation strength and measurement uncertainty. Validation experiments are performed in an impinging jet flow, using laser-Doppler velocimetry as reference measurement. The precision of mean flow and turbulence quantities is significantly improved compared to conventional PIV, due to the increase in dynamic range. In a wide range of applications, MPS PIV is a robust approach to increase the dynamic velocity range without restricting the vector evaluation methods.

High dynamic velocity range particle image velocimetry using multiple pulse separation imaging.

Science.gov (United States)

Persoons, Tim; O'Donovan, Tadhg S

2011-01-01

The dynamic velocity range of particle image velocimetry (PIV) is determined by the maximum and minimum resolvable particle displacement. Various techniques have extended the dynamic range, however flows with a wide velocity range (e.g., impinging jets) still challenge PIV algorithms. A new technique is presented to increase the dynamic velocity range by over an order of magnitude. The multiple pulse separation (MPS) technique (i) records series of double-frame exposures with different pulse separations, (ii) processes the fields using conventional multi-grid algorithms, and (iii) yields a composite velocity field with a locally optimized pulse separation. A robust criterion determines the local optimum pulse separation, accounting for correlation strength and measurement uncertainty. Validation experiments are performed in an impinging jet flow, using laser-Doppler velocimetry as reference measurement. The precision of mean flow and turbulence quantities is significantly improved compared to conventional PIV, due to the increase in dynamic range. In a wide range of applications, MPS PIV is a robust approach to increase the dynamic velocity range without restricting the vector evaluation methods.

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

Science.gov (United States)

Renard, Charles; Molière, Timothée; Cherkashin, Nikolay; Alvarez, José; Vincent, Laetitia; Jaffré, Alexandre; Hallais, Géraldine; Connolly, James Patrick; Mencaraglia, Denis; Bouchier, Daniel

2016-05-04

Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm(-2) for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III-V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2010-07-15

We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

Hydration of a low-alkali CEM III/B–SiO2 cement (LAC)

International Nuclear Information System (INIS)

Lothenbach, Barbara; Le Saout, Gwenn; Ben Haha, Mohsen; Figi, Renato; Wieland, Erich

2012-01-01

The hydration of a low-alkali cement based on CEM III/B blended with 10 wt.% of nanosilica has been studied. The nanosilica reacted within the first days and 90% of the slag reacted within 3.5 years. C-S-H (Ca/Si ∼ 1.2, Al/Si ∼ 0.12), calcite, hydrotalcite, ettringite and possibly strätlingite were the main hydrates. The pore water composition revealed ten times lower alkali concentrations than in Portland cements. Reducing conditions (HS − ) and a pH value of 12.2 were observed. Between 1 month and 3.5 years of hydration more hydrates were formed due to the ongoing slag reaction but no significant differences in the composition of the pore solution or solid phase assemblage were observed. On the basis of thermodynamic calculations it is predicted that siliceous hydrogarnet could form in the long-term and, in the presence of siliceous hydrogarnet, also thaumasite. Nevertheless, even after 3.5 year hydration, neither siliceous hydrogarnet nor thaumasite have been observed.

On the origin of high-velocity runaway stars

Science.gov (United States)

Gvaramadze, Vasilii V.; Gualandris, Alessia; Portegies Zwart, Simon

2009-06-01

We explore the hypothesis that some high-velocity runaway stars attain their peculiar velocities in the course of exchange encounters between hard massive binaries and a very massive star (either an ordinary 50-100Msolar star or a more massive one, formed through runaway mergers of ordinary stars in the core of a young massive star cluster). In this process, one of the binary components becomes gravitationally bound to the very massive star, while the second one is ejected, sometimes with a high speed. We performed three-body scattering experiments and found that early B-type stars (the progenitors of the majority of neutron stars) can be ejected with velocities of >~200-400kms-1 (typical of pulsars), while 3-4Msolar stars can attain velocities of >~300-400kms-1 (typical of the bound population of halo late B-type stars). We also found that the ejected stars can occasionally attain velocities exceeding the Milky Ways's escape velocity.

Cavities at the Si projected range by high dose and energy Si ion implantation in Si

International Nuclear Information System (INIS)

Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

2009-01-01

Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III-V nanostructure fabrication

International Nuclear Information System (INIS)

Kurowski, Ludovic; Bernard, Dorothee; Constant, Eugene; Decoster, Didier

2004-01-01

Hydrogen incorporation in n-type Si-doped GaAs epilayers is a well-known process which leads to the neutralization of the active Si impurities with the formation of SiH complexes. Recently, we have shown that SiH complex dissociation and, consequently, Si-dopant reactivation could occur when the epilayers are exposed to an electron beam. Two epilayers have been studied: the first is a 0.35 μm thick hydrogenated Si-doped GaAs epilayer and the second is Si planar-doped AlGaAs/GaAs/InGaAs heterostructures. Firstly, Hall effect measurements have been carried out on the epilayers exposed, after RF hydrogen plasma exposition, to increasing electron doses with different injection energies. For the 2D heterostructures, we have observed that the free carrier density N s does not vary significantly for weak electron densities. This reactivation presents a threshold value, contrary to the 0.35 μm epilayer in which N s varies quite linearly. It will be shown that such phenomena might be attributed to the filling of surface states as the dopants are progressively reactivated. Then, using a high spatial resolution electron beam lithography system, nanometric conductive patterns have been fabricated starting from hydrogenated epilayers. Electric measurements have been performed and the results obtained show that about 15 nm spatial resolution could be expected. In conclusion, taking into account this spatial resolution, the high spatial contrast of conductivity which could be expected due to the existence of an electron dose threshold, and the high mobility of the AlGaAs/GaAs/InGaAs heterostructure, the effects described in this paper could open a new way for the fabrication of III-V 1D or 2D mesoscopic structures for electronic or optoelectronic applications

Advanced Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: NASA's Perspectives

Science.gov (United States)

Zhu, Dongming

2016-01-01

This presentation reviews NASA environmental barrier coating (EBC) system development programs and the coating materials evolutions for protecting the SiC/SiC Ceramic Matrix Composites in order to meet the next generation engine performance requirements. The presentation focuses on several generations of NASA EBC systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. The current EBC development emphasis is placed on advanced NASA 2700F candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance are described. The research and development opportunities for advanced turbine airfoil environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling are discussed.

Impact resistance of uncoated SiC/SiC composites

International Nuclear Information System (INIS)

Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

2008-01-01

Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 deg. C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded. At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained ∼50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing

Technological development for super-high efficiency solar cells. Technological development for super-high efficiency singlecrystalline silicon solar cells (super-high efficiency singlecrystalline Si solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Chokokoritsu tankessho silicon taiyo denchi no gijutsu kaihatsu (chokokoritsu tankessho silicon taiyo denchi cell no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on technological development of super-high efficiency singlecrystalline silicon solar cells in fiscal 1994. (1) On development of high-performance light receiving layer, the fine electrode for receiving surfaces was designed to reduce serial resistance, and the high-quality oxide passivation film was studied to reduce surface recombination velocity. (2) On development of forming technology of back heterojunction, the high-quality cell with B-doped fine crystalline Si film on its back was studied by heat treatment of the fine crystalline Si film, and the cell structure with high back reflectance of light was also studied. (3) On analysis for high-efficiency cells, the relation between the back recombination velocity at the interface between p-type substrate and back passivation film, and the internal collection efficiency as probe light was injected from the back, was calculated by numerical simulation. As a result, the cell back recombination velocity could be evaluated by measuring the spectral internal collection efficiency to back injection. 15 figs., 6 tabs.

Comparison between Si/SiO{sub 2} and InP/Al{sub 2}O{sub 3} based MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Akbari Tochaei, A., E-mail: amirakbari182@gmail.com; Arabshahi, H.; Benam, M. R. [Payame Noor University, Department of Physics (Iran, Islamic Republic of); Vatan-Khahan, A.; Abedininia, M. [Khayyam University, Department of Physics (Iran, Islamic Republic of)

2016-11-15

Electron transport properties of InP-based MOSFET as a new channel material with Al{sub 2}O{sub 3} as a high-k dielectric oxide layer in comparison with Si-based MOSFET are studied by the ensemble Monte Carlo simulation method in which the conduction band valleys in InP are based on three valley models with consideration of quantum effects (effective potential approach). I{sub d}–V{sub d} characteristics for Si-based MOSFET are in good agreement with theoretical and experimental results. Our results show that I{sub d} of InP-based MOSFET is about 2 times that of Si-based MOSFET. We simulated the diagrams of longitudinal and transverse electric fields, conduction band edge, average electron velocity, and average electron energy for Si-based MOSFET and compared the results with those for InP-based MOSFET. Our results, as was expected, show that the transverse electric field, the conduction band edge, the electron velocity, and the electron energy in a channel in the InP-based MOSFET are greater than those for Si-based MOSFET. But the longitudinal electric field behaves differently at different points of the channel.

Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

International Nuclear Information System (INIS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.; Keyes, B. M.

2000-01-01

Minority carrier lifetimes and interface recombination velocities for GaAs grown on a Si wafer using compositionally graded GeSi buffers have been investigated as a function of GaAs buffer thickness using monolayer-scale control of the GaAs/Ge interface nucleation during molecular beam epitaxy. The GaAs layers are free of antiphase domain disorder, with threading dislocation densities measured by etch pit density of 5x10 5 -2x10 6 cm -2 . Analysis indicates no degradation in either minority carrier lifetime or interface recombination velocity down to a GaAs buffer thickness of 0.1 μm. In fact, record high minority carrier lifetimes exceeding 10 ns have been obtained for GaAs on Si with a 0.1 μm GaAs buffer. Secondary ion mass spectroscopy reveals that cross diffusion of Ga, As, and Ge at the GaAs/Ge interface formed on the graded GeSi buffers are below detection limits in the interface region, indicating that polarity control of the GaAs/Ge interface formed on GeSi/Si substrates can be achieved. (c) 2000 American Institute of Physics

Transformation of sludge Si to nano-Si/SiOx structure by oxygen inward diffusion as precursor for high performance anodes in lithium ion batteries

Science.gov (United States)

Hua, Qiqi; Dai, Dongyang; Zhang, Chengzhi; Han, Fei; Lv, Tiezheng; Li, Xiaoshan; Wang, Shijie; Zhu, Rui; Liao, Haojie; Zhang, Shiguo

2018-05-01

Although several Si/C composite structures have been proposed for high-performance lithium-ion batteries (LIBs), they have still suffered from expensive and complex processes of nano-Si production. Herein, a simple, controllable oxygen inward diffusion was utilized to transform Si sludge obtained from the photovoltaic (PV) industry into the nano-Si/SiOx structure as a result of the high diffusion efficiency of O inside Si and high surface area of the sludge. After further process, a yolk/shell Si/C structure was obtained as an anode material for LIBs. This composite demonstrated an excellent cycling stability, with a high reversible capacity (˜ 1250 mAh/g for 500 cycles), by void space originally left by the SiOx accommodate inner Si expansion. We believe this is a rather simple way to convert the waste Si into a valuable nano-Si for LIB applications.

Mechanical Properties and Real-Time Damage Evaluations of Environmental Barrier Coated SiC/SiC CMCs Subjected to Tensile Loading Under Thermal Gradients

Science.gov (United States)

Appleby, Matthew; Zhu, Dongming; Morscher, Gregory

2015-01-01

SiC/SiC ceramic matrix composites (CMCs) require new state-of-the art environmental barrier coatings (EBCs) to withstand increased temperature requirements and high velocity combustion corrosive combustion gasses. The present work compares the response of coated and uncoated SiC/SiC CMC substrates subjected to simulated engine environments followed by high temperature mechanical testing to asses retained properties and damage mechanisms. Our focus is to explore the capabilities of electrical resistance (ER) measurements as an NDE technique for testing of retained properties under combined high heat-flux and mechanical loading conditions. Furthermore, Acoustic Emission (AE) measurements and Digital Image Correlation (DIC) were performed to determine material damage onset and accumulation.

Electric field dependence of the temperature and drift velocity of hot electrons in n-Si

International Nuclear Information System (INIS)

Vass, E.

2001-01-01

Full text: The average energy- and momentum loss rates of hot electrons interacting simultaneously with acoustic phonons, ionized and neutral impurities in n-Si are calculated quantum theoretically by means of a drifted hot Fermi-Dirac distribution. The drift velocity vd and electron temperature Te occurring in this distribution are determined self-consistently from the force- and power balance equation with respect to the charge neutrality condition. The functions Te(E) and vd(E) calculated in this way are compared with the corresponding relations obtained with help of the simple electron temperature model in order to determine the range of application of this model often used in previous treatises. (author)

V3Si multifilamentary superconductor with high overall Jc

International Nuclear Information System (INIS)

Takeuchi, Takao; Inoue, Kiyoshi; Kosuge, Michio; Iijima, Yasuo; Watanabe, Kazuo

1994-01-01

V 3 Si is one of the A15-type superconducting compounds from which single crystals can be quite easily obtained due to the nature of the equilibrium phase diagram. Thus, the fundamental characteristics of A15 compounds (such as electronic structure and cubic-to-tetragonal structural transformation) have been studied with this compound. V 3 Si is, however, also promising in practical use as an alternative to Nb 3 Sn for high field magnets, since the upper critical field H c2 (4.2 K) is more than 20 T. Although the open-quotes bronze process,close quotes the established commercial process to produce Nb 3 Sn conductors, is also available for V 3 Si, the ternary section of the Cu-V-Si phase diagram indicates two diffusion paths are possible: One from the bronze with low Si content (Si 3 Si, and the other from the bronze with higher Si content to V 3 Si via V 5 Si 3 . The high Si bronze is likely to be advantageous in reducing the bronze volume fraction and hence achieving high overall critical current density J c . This is because the initially formed V 5 Si 3 is eventually converted to V 3 Si as long as the total proportion of V to Si in the composite (overall V/Si molar ratio) is kept around 3. However, long times at high temperatures are necessary for appreciable V 3 Si layer growth, thereby yielding grain growth of V 3 Si and lowering the J c of the V 3 Si compound and the overall J c accordingly. In the present study, in order to improve the overall J c , the authors have realized ∼1μm filament diameter by preparing a double-stacked Cu-8.5at.%Si/V composite. The primary bundle is sheathed with a Ta tube. The Si in the bronze inside the Ta is available only for the diffusion reaction, and the overall V/Si ratios is ∼3

Silicon-photonics light source realized by III-V/Si grating-mirror laser

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2010-01-01

waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared...... to existing silicon light sources....

SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

Science.gov (United States)

Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

2017-05-01

A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

High-magnification velocity field measurements on high-frequency, supersonic microactuators

Science.gov (United States)

Kreth, Phil; Fernandez, Erik; Ali, Mohd; Alvi, Farrukh

2014-11-01

The Resonance-Enhanced Microjet (REM) actuator developed at our laboratory produces pulsed, supersonic microjets by utilizing a number of microscale, flow-acoustic resonance phenomena. The microactuator used in this study consists of an underexpanded source jet flowing into a cylindrical cavity with a single orifice through which an unsteady, supersonic jet issues at a resonant frequency of 7 kHz. The flowfields of a 1 mm underexpanded free jet and the microactuator are studied in detail using high-magnification, phase-locked flow visualizations (microschlieren) and 2-component particle image velocimetry. The challenges of these measurements at such small scales and supersonic velocities are discussed. The results clearly show that the microactuator produces supersonic pulsed jets with velocities exceeding 400 m/s. This is the first direct measurement of the velocity field and its temporal evolution produced by such actuators. Comparisons are made between the flow visualizations, velocity field measurements, and simulations using Implicit LES for a similar microactuator. With high, unsteady momentum output, this type of microactuator has potential in a range of flow control applications.

Application of High-Velocity Oxygen-Fuel (HVOF Spraying to the Fabrication of Yb-Silicate Environmental Barrier Coatings

Directory of Open Access Journals (Sweden)

Emine Bakan

2017-04-01

Full Text Available From the literature, it is known that due to their glass formation tendency, it is not possible to deposit fully-crystalline silicate coatings when the conventional atmospheric plasma spraying (APS process is employed. In APS, rapid quenching of the sprayed material on the substrate facilitates the amorphous deposit formation, which shrinks when exposed to heat and forms pores and/or cracks. This paper explores the feasibility of using a high-velocity oxygen-fuel (HVOF process for the cost-effective fabrication of dense, stoichiometric, and crystalline Yb2Si2O7 environmental barrier coatings. We report our findings on the HVOF process optimization and its resultant influence on the microstructure development and crystallinity of the Yb2Si2O7 coatings. The results reveal that partially crystalline, dense, and vertical crack-free EBCs can be produced by the HVOF technique. However, the furnace thermal cycling results revealed that the bonding of the Yb2Si2O7 layer to the Silicon bond coat needs to be improved.

High velocity properties of the dynamic frictional force between ductile metals

International Nuclear Information System (INIS)

Hammerberg, James Edward; Hollan, Brad L.; Germann, Timothy C.; Ravelo, Ramon J.

2010-01-01

The high velocity properties of the tangential frictional force between ductile metal interfaces seen in large-scale NonEquilibrium Molecular Dynamics (NEMD) simulations are characterized by interesting scaling behavior. In many cases a power law decrease in the frictional force with increasing velocity is observed at high velocities. We discuss the velocity dependence of the high velocity branch of the tangential force in terms of structural transformation and ultimate transition, at the highest velocities, to confined fluid behavior characterized by a critical strain rate. The particular case of an Al/Al interface is discussed.

Temperature stability of c-axis oriented LiNbO3/SiO2/Si thin film layered structures

International Nuclear Information System (INIS)

Tomar, Monika; Gupta, Vinay; Mansingh, Abhai; Sreenivas, K.

2001-01-01

Theoretical calculations have been performed for the temperature stability of the c-axis oriented LiNbO 3 thin film layered structures on passivated silicon (SiO 2 /Si) substrate with and without a non-piezoelectric SiO 2 overlayer. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. The thicknesses of various layers have been determined for optimum SAW performance with zero TCD. The presence of a non-piezoelectric SiO 2 overlayer on LiNbO 3 film is found to significantly enhance the coupling coefficient. The optimized results reveal that a high coupling coefficient of K 2 =3.45% and a zero TCD can be obtained in the SiO 2 /LiNbO 3 /SiO 2 /Si structure with a 0.235λ thick LiNbO 3 layer sandwiched between 0.1λ thick SiO 2 layers. (author)

VARIABILITY OF THE SiO THERMAL LINE EMISSION TOWARD THE YOUNG L1448-mm OUTFLOW

International Nuclear Information System (INIS)

Jimenez-Serra, I.; MartIn-Pintado, J.; RodrIguez-Franco, A.; Winters, J.-M.; Caselli, P.

2011-01-01

The detection of narrow SiO thermal emission toward young outflows has been proposed to be a signature of the magnetic precursor of C-shocks. Recent modeling of the SiO emission across C-shocks predicts variations in the SiO line intensity and line shape at the precursor and intermediate-velocity regimes in only a few years. We present high angular resolution (3.''8 x 3.''3) images of the thermal SiO J = 2→1 emission toward the L1448-mm outflow in two epochs (2004 November-2005 February, 2009 March-April). Several SiO condensations have appeared at intermediate velocities (20-50 km s -1 ) toward the redshifted lobe of the outflow since 2005. Toward one of the condensations (clump D), systematic differences of the dirty beams between 2005 and 2009 could be responsible for the SiO variability. At higher velocities (50-80 km s -1 ), SiO could also have experienced changes in its intensity. We propose that the SiO variability toward L1448-mm is due to a real SiO enhancement by young C-shocks at the internal working surface between the jet and the ambient gas. For the precursor regime (5.2-9.2 km s -1 ), several narrow and faint SiO components are detected. The narrow SiO components tend to be compact, transient and show elongated (bow-shock) morphologies perpendicular to the jet. We speculate that these features are associated with the precursor of C-shocks appearing at the interface of the new SiO components seen at intermediate velocities.

Elastic modulus of Al-Si/SiC metal matrix composites as a function of volume fraction

Energy Technology Data Exchange (ETDEWEB)

Santhosh Kumar, S; Rajasekharan, T [Powder Metallurgy Group, Defence Metallurgical Research Laboratory, Kanchanbagh PO, Hyderabad-500 058 (India); Seshu Bai, V [School of Physics, University of Hyderabad, Central University PO, Hyderabad-500 046 (India); Rajkumar, K V; Sharma, G K; Jayakumar, T, E-mail: dearsanthosh@gmail.co [Non-Destructive Evaluation Division, Indira Gandhi Center for Atomic Research, Kalpakkam, Chennai-603 102 (India)

2009-09-07

Aluminum alloy matrix composites have emerged as candidate materials for electronic packaging applications in the field of aerospace semiconductor electronics. Composites prepared by the pressureless infiltration technique with high volume fractions in the range 0.41-0.70 were studied using ultrasonic velocity measurements. For different volume fractions of SiC, the longitudinal velocity and shear velocity were found to be in the range of 7600-9300 m s{sup -1} and 4400-5500 m s{sup -1}, respectively. The elastic moduli of the composites were determined from ultrasonic velocities and were analysed as a function of the volume fraction of the reinforcement. The observed variation is discussed in the context of existing theoretical models for the effective elastic moduli of two-phase systems.

Comparison of high group velocity accelerating structures

International Nuclear Information System (INIS)

Farkas, Z.D.; Wilson, P.B.

1987-02-01

It is well known that waveguides with no perturbations have phase velocities greater than the velocity of light c. If the waveguide dimensions are chosen so that the phase velocity is only moderately greater than c, only small perturbations are required to reduce the phase velocity to be synchronous with a high energy particle bunch. Such a lightly loaded accelerator structure will have smaller longitudinal and transverse wake potentials and hence will lead to lower emittance growth in an accelerated beam. Since these structures are lightly loaded, their group velocities are only slightly less than c and not in the order of 0.01c, as is the case for the standard disk-loaded structures. To ascertain that the peak and average power requirements for these structures are not prohibitive, we examine the elastance and the Q for several traveling wave structures: phase slip structures, bellows-like structures, and lightly loaded disk-loaded structures

The solidification velocity of nickel and titanium alloys

Science.gov (United States)

Altgilbers, Alex Sho

2002-09-01

The solidification velocity of several Ni-Ti, Ni-Sn, Ni-Si, Ti-Al and Ti-Ni alloys were measured as a function of undercooling. From these results, a model for alloy solidification was developed that can be used to predict the solidification velocity as a function of undercooling more accurately. During this investigation a phenomenon was observed in the solidification velocity that is a direct result of the addition of the various alloying elements to nickel and titanium. The additions of the alloying elements resulted in an additional solidification velocity plateau at intermediate undercoolings. Past work has shown a solidification velocity plateau at high undercoolings can be attributed to residual oxygen. It is shown that a logistic growth model is a more accurate model for predicting the solidification of alloys. Additionally, a numerical model is developed from simple description of the effect of solute on the solidification velocity, which utilizes a Boltzmann logistic function to predict the plateaus that occur at intermediate undercoolings.

High density plasma via hole etching in SiC

International Nuclear Information System (INIS)

Cho, H.; Lee, K.P.; Leerungnawarat, P.; Chu, S.N.G.; Ren, F.; Pearton, S.J.; Zetterling, C.-M.

2001-01-01

Throughwafer vias up to 100 μm deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF 6 /O 2 at a controlled rate of ∼0.6 μm min-1 and use of Al masks. Selectivities of >50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining

Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

Science.gov (United States)

Hasanah, L.; Suhendi, E.; Khairrurijal

2018-05-01

Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy

International Nuclear Information System (INIS)

Kwon, O.; Boeckl, J. J.; Lee, M. L.; Pitera, A. J.; Fitzgerald, E. A.; Ringel, S. A.

2006-01-01

Room temperature operation of visible AlGaInP laser diodes epitaxially integrated on Si was demonstrated. Compressively strained laser heterostructures were grown by molecular beam epitaxy (MBE) on low dislocation density SiGe/Si substrates, where the threading dislocation density of the top relaxed Ge layers was measured in the range of 2x10 6 cm -2 . A threshold current density of J th ∼1.65 kA/cm 2 for the as-cleaved, gain-guided AlGaInP laser grown on SiGe/Si was obtained at the peak emission wavelength of 680 nm under pulsed mode current injection. These results show that not only can high quality AlGaInP materials grown by MBE be achieved on Si via relaxed SiGe interlayers, but the prototype demonstration of laser diode operation on Si illustrates that very defect sensitive optoelectronics in the III-P system can indeed be integrated with Si substrates by heteroepitaxial methods

Arsenic removal with iron(II) and iron(III) in waters with high silicate and phosphate concentrations.

Science.gov (United States)

Roberts, Linda C; Hug, Stephan J; Ruettimann, Thomas; Billah, Morsaline; Khan, Abdul Wahab; Rahman, Mohammad Tariqur

2004-01-01

Arsenic removal by passive treatment, in which naturally present Fe(II) is oxidized by aeration and the forming iron(III) (hydr)oxides precipitate with adsorbed arsenic, is the simplest conceivable water treatment option. However, competing anions and low iron concentrations often require additional iron. Application of Fe(II) instead of the usually applied Fe(III) is shown to be advantageous, as oxidation of Fe(II) by dissolved oxygen causes partial oxidation of As(III) and iron(III) (hydr)oxides formed from Fe(II) have higher sorption capacities. In simulated groundwater (8.2 mM HCO3(-), 2.5 mM Ca2+, 1.6 mM Mg2+, 30 mg/L Si, 3 mg/L P, 500 ppb As(III), or As(V), pH 7.0 +/- 0.1), addition of Fe(II) clearly leads to better As removal than Fe(III). Multiple additions of Fe(II) further improved the removal of As(II). A competitive coprecipitation model that considers As(III) oxidation explains the observed results and allows the estimation of arsenic removal under different conditions. Lowering 500 microg/L As(III) to below 50 microg/L As(tot) in filtered water required > 80 mg/L Fe(III), 50-55 mg/L Fe(II) in one single addition, and 20-25 mg/L in multiple additions. With As(V), 10-12 mg/L Fe(II) and 15-18 mg/L Fe(III) was required. In the absence of Si and P, removal efficiencies for Fe(II) and Fe(III) were similar: 30-40 mg/L was required for As(II), and 2.0-2.5 mg/L was required for As(V). In a field study with 22 tubewells in Bangladesh, passive treatment efficiently removed phosphate, but iron contents were generally too low for efficient arsenic removal.

High-resolution H -band Spectroscopy of Be Stars with SDSS-III/APOGEE. II. Line Profile and Radial Velocity Variability

Energy Technology Data Exchange (ETDEWEB)

Chojnowski, S. Drew; Holtzman, Jon A. [Apache Point Observatory and New Mexico State University, P.O. Box 59, Sunspot, NM, 88349-0059 (United States); Wisniewski, John P. [Department of Physics and Astronomy, The University of Oklahoma, 440 W. Brooks Street, Norman, OK 73019 (United States); Whelan, David G. [Department of Physics, Austin College, 900 N. Grand Avenue, Sherman, TX 75090 (United States); Labadie-Bartz, Jonathan; Pepper, Joshua [Department of Physics, Lehigh University, Bethlehem, PA 18015 (United States); Fernandes, Marcelo Borges [Observatório Nacional, Rua General José Cristino 77, 20921-400, São Cristovão, Rio de Janeiro (Brazil); Lin, Chien-Cheng [Key Laboratory for Research in Galaxies and Cosmology, Shanghai Astronomical Observatory, Chinese Academy of Sciences, 80 Nandan Road Shanghai 200030 (China); Majewski, Steven R. [Department of Astronomy, University of Virginia, P.O. Box 400325, Charlottesville, VA 22904-4325 (United States); Stringfellow, Guy S. [Center for Astrophysics and Space Astronomy, Department of Astrophysical and Planetary Sciences, University of Colorado, 389 UCB, Boulder, Colorado 80309-0389 (United States); Mennickent, Ronald E.; Tang, Baitian [Departamento de Astronomía, Universidad de Concepción, Concepción (Chile); Roman-Lopes, Alexandre [Departamento de Física, Facultad de Ciencias, Universidad de La Serena, Cisternas 1200, La Serena (Chile); Hearty, Fred R. [Department of Astronomy and Astrophysics, The Pennsylvania State University, University Park, PA 16802 (United States); Zasowski, Gail [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD, 21218 (United States)

2017-04-01

We report on the H -band spectral variability of classical Be stars observed over the course of the Apache Point Galactic Evolution Experiment (APOGEE), one of four subsurveys comprising SDSS-III. As described in the first paper of this series, the APOGEE B-type emission-line (ABE) star sample was culled from the large number of blue stars observed as telluric standards during APOGEE observations. In this paper, we explore the multi-epoch ABE sample, consisting of 1100 spectra for 213 stars. These “snapshots” of the circumstellar disk activity have revealed a wealth of temporal variability including, but not limited to, gradual disappearance of the line emission and vice versa over both short and long timescales. Other forms of variability include variation in emission strength, emission peak intensity ratios, and emission peak separations. We also analyze radial velocities (RVs) of the emission lines for a subsample of 162 stars with sufficiently strong features, and we discuss on a case-by-case basis whether the RV variability exhibited by some stars is caused by binary motion versus dynamical processes in the circumstellar disks. Ten systems are identified as convincing candidates for binary Be stars with as of yet undetected companions.

High-resolution H -band Spectroscopy of Be Stars with SDSS-III/APOGEE. II. Line Profile and Radial Velocity Variability

International Nuclear Information System (INIS)

Chojnowski, S. Drew; Holtzman, Jon A.; Wisniewski, John P.; Whelan, David G.; Labadie-Bartz, Jonathan; Pepper, Joshua; Fernandes, Marcelo Borges; Lin, Chien-Cheng; Majewski, Steven R.; Stringfellow, Guy S.; Mennickent, Ronald E.; Tang, Baitian; Roman-Lopes, Alexandre; Hearty, Fred R.; Zasowski, Gail

2017-01-01

We report on the H -band spectral variability of classical Be stars observed over the course of the Apache Point Galactic Evolution Experiment (APOGEE), one of four subsurveys comprising SDSS-III. As described in the first paper of this series, the APOGEE B-type emission-line (ABE) star sample was culled from the large number of blue stars observed as telluric standards during APOGEE observations. In this paper, we explore the multi-epoch ABE sample, consisting of 1100 spectra for 213 stars. These “snapshots” of the circumstellar disk activity have revealed a wealth of temporal variability including, but not limited to, gradual disappearance of the line emission and vice versa over both short and long timescales. Other forms of variability include variation in emission strength, emission peak intensity ratios, and emission peak separations. We also analyze radial velocities (RVs) of the emission lines for a subsample of 162 stars with sufficiently strong features, and we discuss on a case-by-case basis whether the RV variability exhibited by some stars is caused by binary motion versus dynamical processes in the circumstellar disks. Ten systems are identified as convincing candidates for binary Be stars with as of yet undetected companions.

Effect of impact energy on damage resistance and mechanical property of C/SiC composites under low velocity impact

Energy Technology Data Exchange (ETDEWEB)

Mei, Hui, E-mail: phdhuimei@yahoo.com; Yu, Changkui; Xu, Yawei; Han, Daoyang; Cheng, Laifei

2017-02-27

The present study investigated the damage resistance of two dimensional carbon fiber reinforced silicon carbide (C/SiCs) composites subjected to low velocity impact (LVI). Damage microstructures of specimens under different impact energies (E{sub i}) were characterized by infrared thermography, X-ray computed tomography and scanning electron microscopy. The real damage radii of specimens were found to change slightly with E{sub i}, whereas apparent damage radii where much larger. Overall, the fabricated 2D C/SiC composites exhibited good damage resistance to LVI with nominal post-impact tensile strengths remaining at 89.4%, 83.35%, 76.97%, and 74.84% of their pre-impacted counterpart of 158 MPa, for impact energies of 3, 4, 5, and 6 J, respectively. Compared with the as-received one, after LVI real tensile strengths of the C/SiC composite specimens increased by 5.84% for the E{sub i} of 3 J, 9.27% for 4 J, −1.83% for 5 J, −3.16% for 6 J.

Characterization and electrochemical properties of Ni(Si)/Ni5Si2 multiphase coatings prepared by HVOF spraying

Science.gov (United States)

Verdian, M. M.; Raeissi, K.; Salehi, M.

2012-11-01

Ni(Si)/Ni5Si2 powders were produced by mechanical alloying (MA) of Ni-25 at.% Si powder mixture. Then, the as-milled powders were sprayed onto copper substrate using high velocity oxy-fuel (HVOF) process. The phase composition and microstructure of the coatings were examined by X-ray diffractometry and scanning electron microscopy. Polarization tests and electrochemical impedance spectroscopy (EIS) measurements were also employed to study corrosion performance of the coatings in 3.5% NaCl solution. The results showed that although single phase Ni3Si was formed during annealing of Ni(Si)/Ni5Si2 powders, but, only Ni(Si) and Ni5Si2 are present in HVOF coatings and no new phase has been formed during spraying. The coatings had microhardness up to 746 HV0.05. Further investigations showed the corrosion performance of multiphase coatings in 3.5% NaCl solution was better than that of copper substrate. The phase transitions during MA, HVOF and annealing processes were discussed in association with Ni-Si phase diagram and nature of each process.

Simple Motor Control Concept Results High Efficiency at High Velocities

Science.gov (United States)

Starin, Scott; Engel, Chris

2013-09-01

The need for high velocity motors in space applications for reaction wheels and detectors has stressed the limits of Brushless Permanent Magnet Motors (BPMM). Due to inherent hysteresis core losses, conventional BPMMs try to balance the need for torque verses hysteresis losses. Cong-less motors have significantly less hysteresis losses but suffer from lower efficiencies. Additionally, the inherent low inductance in cog-less motors result in high ripple currents or high switching frequencies, which lowers overall efficiency and increases performance demands on the control electronics.However, using a somewhat forgotten but fully qualified technology of Isotropic Magnet Motors (IMM), extremely high velocities may be achieved at low power input using conventional drive electronics. This paper will discuss the trade study efforts and empirical test data on a 34,000 RPM IMM.

New evaluation method of crack growth in SiC/SiC composites using interface elements

International Nuclear Information System (INIS)

Serizawa, H.; Ando, M.; Lewinsohn, C.A.; Murakawa, H.

2000-01-01

Crack propagation behavior in SiC/SiC composites was analyzed using a new computer simulation method that included time-dependent interface elements. The simulation method was used to describe the time-dependent crack growth in SiC/SiC composites under four-point bending of single-edge-notched beam bend-bars. Two methods were used to simulate time-dependent crack growth in SiC/SiC composites due to fiber creep. In one method, the creep property was introduced into the interface elements by the general method of finite element method (FEM) analysis. In the second method, a new technique making the best use of the potential function was used to represent crack closure tractions due to creeping fibers. The stage-II slow crack growth of a general creep deformation was simulated by both methods. Additionally, stage-III crack growth and the transition from stage-II to stage-III could be simulated by the new method. The new method has the potential to completely simulate time-dependent crack growth behavior in SiC/SiC composites due to fiber creep

Fast Slip Velocity in a High-Entropy Alloy

Science.gov (United States)

Rizzardi, Q.; Sparks, G.; Maaß, R.

2018-04-01

Due to fluctuations in nearest-neighbor distances and chemistry within the unit cell, high-entropy alloys are believed to have a much higher resistance to dislocation motion than pure crystals. Here, we investigate the coarse-grained dynamics of a number of dislocations being active during a slip event. We found that the time-resolved dynamics of slip is practically identical in Au and an Al0.3CoCrFeNi high-entropy alloy, but much faster than in Nb. Differences between the FCC-crystals are seen in the spatiotemporal velocity profile, with faster acceleration and slower velocity relaxation in the high-entropy alloy. Assessing distributions that characterize the intermittently evolving plastic flow reveals material-dependent scaling exponents for size, duration, and velocity-size distributions. The results are discussed in view of the underlying dislocation mobility.

Ultra-high current density thin-film Si diode

Science.gov (United States)

Wang, Qi [Littleton, CO

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Fabrication of highly oriented D03-Fe3Si nanocrystals by solid-state dewetting of Si ultrathin layer

International Nuclear Information System (INIS)

Naito, Muneyuki; Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko; Nakao, Motoi; Sudoh, Koichi

2013-01-01

In this paper, highly oriented nanocrystals of Fe 3 Si with a D0 3 structure are fabricated on SiO 2 using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO 2 layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe 3 Si nanocrystals with D0 3 , B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe 3 Si nanocrystals with a D0 3 single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0 3 -Fe 3 Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0 3 structure after post-deposition annealing

SiC substrate defects and III-N heteroepitaxy

Energy Technology Data Exchange (ETDEWEB)

Poust, B D [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Koga, T S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Sandhu, R [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Heying, B [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Hsing, R [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Wojtowicz, M [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Khan, A [Department of Electrical Engineering, University of South Carolina, Columbia, SC (United States); Goorsky, M S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States)

2003-05-21

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuK{alpha} radiation ({lambda} = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10{sup -7}. The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from {approx}100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were {approx}20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established.

SiC substrate defects and III-N heteroepitaxy

International Nuclear Information System (INIS)

Poust, B D; Koga, T S; Sandhu, R; Heying, B; Hsing, R; Wojtowicz, M; Khan, A; Goorsky, M S

2003-01-01

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuKα radiation (λ = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10 -7 . The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from ∼100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were ∼20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established

HIGH VELOCITY THERMAL GUN FOR SURFACE PREPARATION AND TREATMENT

Directory of Open Access Journals (Sweden)

I.A. Gorlach

2012-01-01

Full Text Available Many surface preparation and treatment processes utilise compressed air to propel particles against surfaces in order to clean and treat them. The effectiveness of the processes depends on the velocity of the particles, which in turn depends on the pressure of the compressed air. This paper describes a thermal gun built on the principles of High Velocity Air Fuel (HVAF and High Velocity Oxy Fuel (HVOF processes. The designed apparatus can be used for abrasive blasting, coating of surfaces, cutting of rocks, removing rubber from mining equipment, cleaning of contaminations etc.

On the origin of high-velocity runaway stars

NARCIS (Netherlands)

Gvaramadze, V.V.; Gualandris, A.; Portegies Zwart, S.

2009-01-01

We explore the hypothesis that some high-velocity runaway stars attain their peculiar velocities in the course of exchange encounters between hard massive binaries and a very massive star (either an ordinary 50-100 M-circle dot star or a more massive one, formed through runaway mergers of ordinary

Treatment Protocol for High Velocity/High Energy Gunshot Injuries to the Face

Science.gov (United States)

Peled, Micha; Leiser, Yoav; Emodi, Omri; Krausz, Amir

2011-01-01

Major causes of facial combat injuries include blasts, high-velocity/high-energy missiles, and low-velocity missiles. High-velocity bullets fired from assault rifles encompass special ballistic properties, creating a transient cavitation space with a small entrance wound and a much larger exit wound. There is no dispute regarding the fact that primary emergency treatment of ballistic injuries to the face commences in accordance with the current advanced trauma life support (ATLS) recommendations; the main areas in which disputes do exist concern the question of the timing, sequence, and modes of surgical treatment. The aim of the present study is to present the treatment outcome of high-velocity/high-energy gunshot injuries to the face, using a protocol based on the experience of a single level I trauma center. A group of 23 injured combat soldiers who sustained bullet and shrapnel injuries to the maxillofacial region during a 3-week regional military conflict were evaluated in this study. Nine patients met the inclusion criteria (high-velocity/high-energy injuries) and were included in the study. According to our protocol, upon arrival patients underwent endotracheal intubation and were hemodynamically stabilized in the shock-trauma unit and underwent total-body computed tomography with 3-D reconstruction of the head and neck and computed tomography angiography. All patients underwent maxillofacial surgery upon the day of arrival according to the protocol we present. In view of our treatment outcomes, results, and low complication rates, we conclude that strict adherence to a well-founded and structured treatment protocol based on clinical experience is mandatory in providing efficient, appropriate, and successful treatment to a relatively large group of patients who sustain various degrees of maxillofacial injuries during a short period of time. PMID:23449809

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

Science.gov (United States)

El Kazzi, S.; Alian, A.; Hsu, B.; Verhulst, A. S.; Walke, A.; Favia, P.; Douhard, B.; Lu, W.; del Alamo, J. A.; Collaert, N.; Merckling, C.

2018-02-01

In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an "InSb-like" interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the "GaAs-like" one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jp = 8 mA/μm2 is achieved.

MAGNETIZED GAS IN THE SMITH HIGH VELOCITY CLOUD

International Nuclear Information System (INIS)

Hill, Alex S.; McClure-Griffiths, Naomi M.; Mao, S. A.; Benjamin, Robert A.; Lockman, Felix J.

2013-01-01

We report the first detection of magnetic fields associated with the Smith High Velocity Cloud. We use a catalog of Faraday rotation measures toward extragalactic radio sources behind the Smith Cloud, new H I observations from the Robert C. Byrd Green Bank Telescope, and a spectroscopic map of Hα from the Wisconsin H-Alpha Mapper Northern Sky Survey. There are enhancements in rotation measure (RM) of ≈100 rad m –2 which are generally well correlated with decelerated Hα emission. We estimate a lower limit on the line-of-sight component of the field of ≈8 μG along a decelerated filament; this is a lower limit due to our assumptions about the geometry. No RM excess is evident in sightlines dominated by H I or Hα at the velocity of the Smith Cloud. The smooth Hα morphology of the emission at the Smith Cloud velocity suggests photoionization by the Galactic ionizing radiation field as the dominant ionization mechanism, while the filamentary morphology and high (≈1 Rayleigh) Hα intensity of the lower-velocity magnetized ionized gas suggests an ionization process associated with shocks due to interaction with the Galactic interstellar medium. The presence of the magnetic field may contribute to the survival of high velocity clouds like the Smith Cloud as they move from the Galactic halo to the disk. We expect these data to provide a test for magnetohydrodynamic simulations of infalling gas

Metastable structure formation during high velocity grinding

International Nuclear Information System (INIS)

Samarin, A.N.; Klyuev, M.M.

1984-01-01

Metastable structures in surface layers of samples are; investigated during force high-velocity abrasive grinding. Samples of martensitic (40Kh13), austenitic (12Kh18N10T), ferritic (05Kh23Yu5) steels and some alloys, in particular KhN77TYuR (EhI437B), were grinded for one pass at treatment depth from 0.17 up to 2.6 mm. It is established that processes of homogenizing, recrystallization and coagulation are; developed during force high-velocity grinding along with polymorphic transformations in the zone of thermomechanical effect, that leads to changes of physical and mechanical properties of the surface

Consideration of wear rates at high velocity

Science.gov (United States)

Hale, Chad S.

The development of the research presented here is one in which high velocity relative sliding motion between two bodies in contact has been considered. Overall, the wear environment is truly three-dimensional. The attempt to characterize three-dimensional wear was not economically feasible because it must be analyzed at the micro-mechanical level to get results. Thus, an engineering approximation was carried out. This approximation was based on a metallographic study identifying the need to include viscoplasticity constitutive material models, coefficient of friction, relationships between the normal load and velocity, and the need to understand wave propagation. A sled test run at the Holloman High Speed Test Track (HHSTT) was considered for the determination of high velocity wear rates. In order to adequately characterize high velocity wear, it was necessary to formulate a numerical model that contained all of the physical events present. The experimental results of a VascoMax 300 maraging steel slipper sliding on an AISI 1080 steel rail during a January 2008 sled test mission were analyzed. During this rocket sled test, the slipper traveled 5,816 meters in 8.14 seconds and reached a maximum velocity of 1,530 m/s. This type of environment was never considered previously in terms of wear evaluation. Each of the features of the metallography were obtained through micro-mechanical experimental techniques. The byproduct of this analysis is that it is now possible to formulate a model that contains viscoplasticity, asperity collisions, temperature and frictional features. Based on the observations of the metallographic analysis, these necessary features have been included in the numerical model, which makes use of a time-dynamic program which follows the movement of a slipper during its experimental test run. The resulting velocity and pressure functions of time have been implemented in the explicit finite element code, ABAQUS. Two-dimensional, plane strain models

Temperature stability of c-axis oriented LiNbO{sub 3}/SiO{sub 2}/Si thin film layered structures

Energy Technology Data Exchange (ETDEWEB)

Tomar, Monika [Department of Physics and Astrophysics, University of Delhi, Delhi (India)]. E-mail: mtomar@physics.du.ac.in; monikatomar@rediffmail.com; Gupta, Vinay; Mansingh, Abhai; Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi (India)

2001-08-07

Theoretical calculations have been performed for the temperature stability of the c-axis oriented LiNbO{sub 3} thin film layered structures on passivated silicon (SiO{sub 2}/Si) substrate with and without a non-piezoelectric SiO{sub 2} overlayer. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. The thicknesses of various layers have been determined for optimum SAW performance with zero TCD. The presence of a non-piezoelectric SiO{sub 2} overlayer on LiNbO{sub 3} film is found to significantly enhance the coupling coefficient. The optimized results reveal that a high coupling coefficient of K{sup 2}=3.45% and a zero TCD can be obtained in the SiO{sub 2}/LiNbO{sub 3}/SiO{sub 2}/Si structure with a 0.235{lambda} thick LiNbO{sub 3} layer sandwiched between 0.1{lambda} thick SiO{sub 2} layers. (author)

Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: Recent Advances and Future Directions

Science.gov (United States)

Zhu, Dongming

2016-01-01

This presentation briefly reviews the SiC/SiC major environmental and environment-fatigue degradations encountered in simulated turbine combustion environments, and thus NASA environmental barrier coating system evolution for protecting the SiC/SiC Ceramic Matrix Composites for meeting the engine performance requirements. The presentation will review several generations of NASA EBC materials systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. This paper will also focus on the performance requirements and design considerations of environmental barrier coatings for next generation turbine engine applications. The current development emphasis is placed on advanced NASA candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. The efforts have been also directed to developing prime-reliant, self-healing 2700F EBC bond coat; and high stability, lower thermal conductivity, and durable EBC top coats. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance will be described. The research and development opportunities for turbine engine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be briefly discussed.

Positron annihilation in Si and Si-related materials in thermal equilibrium at high temperature

International Nuclear Information System (INIS)

Uedono, A.; Muramatsu, M.; Ubukata, T.; Tanino, H.; Shiraishi, T.; Tanigawa, S.; Takasu, S.

2001-01-01

Annihilation characteristics of positrons in the carbon/Si structure in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured as a function of incident positron energy in the temperature range between 298 K and 1473 K. Above 1173 K, the value of S corresponding to the annihilation of positrons near the carbon/Si interface started to increase, which was attributed to the carbonization of Si and the introduction of open-space defects due to the diffusion of Si atoms toward the carbon layer. The behavior of Ps in a thermally grown SiO 2 film was also studied at 298-1523 K. (orig.)

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

Science.gov (United States)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

Velocity bunching of high-brightness electron beams

Directory of Open Access Journals (Sweden)

S. G. Anderson

2005-01-01

Full Text Available Velocity bunching has been recently proposed as a tool for compressing electron beam pulses in modern high brightness photoinjector sources. This tool is familiar from earlier schemes implemented for bunching dc electron sources, but presents peculiar challenges when applied to high current, low emittance beams from photoinjectors. The main difficulty foreseen is control of emittance oscillations in the beam in this scheme, which can be naturally considered as an extension of the emittance compensation process at moderate energies. This paper presents two scenarios in which velocity bunching, combined with emittance control, is to play a role in nascent projects. The first is termed ballistic bunching, where the changing of relative particle velocities and positions occur in distinct regions, a short high gradient linac, and a drift length. This scenario is discussed in the context of the proposed ORION photoinjector. Simulations are used to explore the relationship between the degree of bunching, and the emittance compensation process. Experimental measurements performed at the UCLA Neptune Laboratory of the surprisingly robust bunching process, as well as accompanying deleterious transverse effects, are presented. An unanticipated mechanism for emittance growth in bends for highly momentum chirped beam was identified and studied in these experiments. The second scenario may be designated as phase space rotation, and corresponds closely to the recent proposal of Ferrario and Serafini. Its implementation for the compression of the electron beam pulse length in the PLEIADES inverse Compton scattering (ICS experiment at LLNL is discussed. It is shown in simulations that optimum compression may be obtained by manipulation of the phases in low gradient traveling wave accelerator sections. Measurements of the bunching and emittance control achieved in such an implementation at PLEIADES, as well as aspects of the use of velocity-bunched beam directly

Si cycling in a forest biogeosystem - the importance of transient state biogenic Si pools

Science.gov (United States)

Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Meier, K.; Puppe, D.; Wanner, M.; Kaczorek, D.

2013-07-01

The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to DSi (Gerard et al., 2008). However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%). Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007-04/2011), we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (version ZALF), (ii) related Si budgets, and (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. The comparatively high DSi concentrations (6 mg L-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

An Empirical Fitting Method to Type Ia Supernova Light Curves. III. A Three-parameter Relationship: Peak Magnitude, Rise Time, and Photospheric Velocity

Science.gov (United States)

Zheng, WeiKang; Kelly, Patrick L.; Filippenko, Alexei V.

2018-05-01

We examine the relationship between three parameters of Type Ia supernovae (SNe Ia): peak magnitude, rise time, and photospheric velocity at the time of peak brightness. The peak magnitude is corrected for extinction using an estimate determined from MLCS2k2 fitting. The rise time is measured from the well-observed B-band light curve with the first detection at least 1 mag fainter than the peak magnitude, and the photospheric velocity is measured from the strong absorption feature of Si II λ6355 at the time of peak brightness. We model the relationship among these three parameters using an expanding fireball with two assumptions: (a) the optical emission is approximately that of a blackbody, and (b) the photospheric temperatures of all SNe Ia are the same at the time of peak brightness. We compare the precision of the distance residuals inferred using this physically motivated model against those from the empirical Phillips relation and the MLCS2k2 method for 47 low-redshift SNe Ia (0.005 Ia in our sample with higher velocities are inferred to be intrinsically fainter. Eliminating the high-velocity SNe and applying a more stringent extinction cut to obtain a “low-v golden sample” of 22 SNe, we obtain significantly reduced scatter of 0.108 ± 0.018 mag in the new relation, better than those of the Phillips relation and the MLCS2k2 method. For 250 km s‑1 of residual peculiar motions, we find 68% and 95% upper limits on the intrinsic scatter of 0.07 and 0.10 mag, respectively.

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

Energy Technology Data Exchange (ETDEWEB)

Thomas, Christopher; Portnoff, Samuel [Widetronix Corp., Ithaca, New York 14850 (United States); Spencer, M. G. [Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

2016-01-04

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P{sup +}N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH{sup 3}{sub x}) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm{sup 2}. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm{sup 2}, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 10{sup 5}–10{sup 6 }cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P{sup +}N junction structure can mitigate some of the negative effects.

Surface Defect Passivation and Reaction of c-Si in H2S.

Science.gov (United States)

Liu, Hsiang-Yu; Das, Ujjwal K; Birkmire, Robert W

2017-12-26

A unique passivation process of Si surface dangling bonds through reaction with hydrogen sulfide (H 2 S) is demonstrated in this paper. A high-level passivation quality with an effective minority carrier lifetime (τ eff ) of >2000 μs corresponding to a surface recombination velocity of passivation by monolayer coverage of S on the Si surface. However, S passivation of the Si surface is highly unstable because of thermodynamically favorable reaction with atmospheric H 2 O and O 2 . This instability can be eliminated by capping the S-passivated Si surface with a protective thin film such as low-temperature-deposited amorphous silicon nitride.

VELOCITY EVOLUTION AND THE INTRINSIC COLOR OF TYPE Ia SUPERNOVAE

International Nuclear Information System (INIS)

Foley, Ryan J.; Sanders, Nathan E.; Kirshner, Robert P.

2011-01-01

To understand how best to use observations of Type Ia supernovae (SNe Ia) to obtain precise and accurate distances, we investigate the relations between spectra of SNe Ia and their intrinsic colors. Using a sample of 1630 optical spectra of 255 SNe, based primarily on data from the CfA Supernova Program, we examine how the velocity evolution and line strengths of Si II λ6355 and Ca II H and K are related to the B – V color at peak brightness. We find that the maximum-light velocity of Si II λ6355 and Ca II H and K and the maximum-light pseudo-equivalent width of Si II λ6355 are correlated with intrinsic color, with intrinsic color having a linear relation with the Si II λ6355 measurements. Ca II H and K does not have a linear relation with intrinsic color, but lower-velocity SNe tend to be intrinsically bluer. Combining the spectroscopic measurements does not improve intrinsic color inference. The intrinsic color scatter is larger for higher-velocity SNe Ia—even after removing a linear trend with velocity—indicating that lower-velocity SNe Ia are more 'standard crayons'. Employing information derived from SN Ia spectra has the potential to improve the measurements of extragalactic distances and the cosmological properties inferred from them.

Tribological Properties of AlSi11-SiCp Composite Castings Produced by Pressure Die Casting Method

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Konopka Z.

2014-08-01

Full Text Available The measurement results concerning the abrasive wear of AlSi11-SiC particles composites are presented in paper. The method of preparing a composite slurry composed of AlSi11 alloy matrix and 10, 20% vol.% of SiC particles, as well as the method of its high-pressure die casting was described. Composite slurry was injected into metal mould of cold chamber pressure die cast machine and castings were produced at various values of the piston velocity in the second stage of injection, diverse intensification pressure values, and various injection gate width values. Very good uniform arrangement of SiC particles in volume composite matrix was observed and these results were publicated early in this journal. The kinetics of abrasive wear and correlation with SiC particles arrangement in composite matrix were presented. Better wear resistance of composite was observed in comparison with aluminium alloy. Very strong linear correlation between abrasive wear and particle arrangement was observed. The conclusion gives the analysis and the interpretation of the obtained results.

Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

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Kan Li

2016-06-01

Full Text Available Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

A survey of high-velocity H I in the Cetus region

International Nuclear Information System (INIS)

Cohen, R.J.

1982-01-01

The region 02sup(h) 16sup(m) 0 0 surrounding the Cohen and Davies complex of high-velocity clouds has been surveyed in the 21-cm line of H I using the Jodrell Bank MK II radio telescope (beamwidth 31 x 34 arcmin). The high-velocity cloud complex was sampled every 2sup(m) in right ascension and every 0 0 .5 in declination. The observations cover a velocity range of 2100 km s -1 with a resolution of 7.3 km s -1 and an rms noise level of 0.025 K. No HVCs were found outside the velocity range -400 to +100 km s -1 . The data are presented on microfiche as a set of contour maps showing 21-cm line temperature as a function of declination and radial velocity at constant values of right ascension. Discussion is centred on the very-high-velocity clouds at velocities of -360 to -190 km s -1 . It is concluded that they are probably debris from the tidal interaction between our Galaxy and the Magellanic Clouds. (author)

An electrostatic Si e-gun and a high temperature elemental B source for Si heteroepitaxial growth

Science.gov (United States)

Scarinci, F.; Casella, A.; Lagomarsino, S.; Fiordelisi, M.; Strappaveccia, P.; Gambacorti, N.; Grimaldi, M. G.; Xue, LiYing

1996-08-01

In this paper we present two kind of sources used in Si MBE growth: a Si source where an electron beam is electrostatically deflected onto a Si rod and a high temperature B source to be used for p-doping. Both sources have been designed and constructed at IESS. The Si source is constituted of a Si rod mounted on a 3/4″ flange with high-voltage connector. A W filament held at high voltage (up to 2000 V) is heated by direct current. Electrons from the filament are electrostatically focused onto the Si rod which is grounded. This mounting allows a minimum heating dispersion and no contamination, because the only hot objects are the Si rod and the W filament which is mounted in such a way that it cannot see the substrate. Growth rates of 10 Å/min on a substrate at 20 cm from the source have been measured. Auger and LEED have shown no contamination. The B source is constituted of a graphite block heated by direct current. A pyrolitic graphite crucible put in the graphite heater contains the elemental B. The cell is water cooled and contains Ta screens to avoid heat dispersion. It has been tested up to a temperature of 1700°C. P-doped Si 1- xGe x layers have been grown and B concentration has been measured by SIMS. A good control and reproducibility has been attained.

A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

Science.gov (United States)

Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

2018-02-01

We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

Reliability of force-velocity relationships during deadlift high pull.

Science.gov (United States)

Lu, Wei; Boyas, Sébastien; Jubeau, Marc; Rahmani, Abderrahmane

2017-11-13

This study aimed to evaluate the within- and between-session reliability of force, velocity and power performances and to assess the force-velocity relationship during the deadlift high pull (DHP). Nine participants performed two identical sessions of DHP with loads ranging from 30 to 70% of body mass. The force was measured by a force plate under the participants' feet. The velocity of the 'body + lifted mass' system was calculated by integrating the acceleration and the power was calculated as the product of force and velocity. The force-velocity relationships were obtained from linear regression of both mean and peak values of force and velocity. The within- and between-session reliability was evaluated by using coefficients of variation (CV) and intraclass correlation coefficients (ICC). Results showed that DHP force-velocity relationships were significantly linear (R² > 0.90, p  0.94), mean and peak velocities showed a good agreement (CV reliable and can therefore be utilised as a tool to characterise individuals' muscular profiles.

IN-SYNC. III. THE DYNAMICAL STATE OF IC 348—A SUPER-VIRIAL VELOCITY DISPERSION AND A PUZZLING SIGN OF CONVERGENCE

International Nuclear Information System (INIS)

Cottaar, Michiel; Meyer, Michael R.; Covey, Kevin R.; Foster, Jonathan B.; Tan, Jonathan C.; Rio, Nicola da; Nidever, David L.; Chojnowski, S. Drew; Majewski, Steve; Skrutskie, Michael F.; Wilson, John C.; Zasowski, Gail; Flaherty, Kevin M.; Frinchaboy, Peter M.

2015-01-01

Most field stars will have encountered the highest stellar density and hence the largest number of interactions in their birth environment. Yet the stellar dynamics during this crucial phase are poorly understood. Here we analyze the radial velocities measured for 152 out of 380 observed stars in the 2–6 Myr old star cluster IC 348 as part of the SDSS-III APOGEE. The radial velocity distribution of these stars is fitted with one or two Gaussians, convolved with the measurement uncertainties including binary orbital motions. Including a second Gaussian improves the fit; the high-velocity outliers that are best fit by this second component may either (1) be contaminants from the nearby Perseus OB2 association, (2) be a halo of ejected or dispersing stars from IC 348, or (3) reflect that IC 348 has not relaxed to a Gaussian velocity distribution. We measure a velocity dispersion for IC 348 of 0.72 ± 0.07 km s −1 (or 0.64 ± 0.08 km s −1 if two Gaussians are fitted), which implies a supervirial state, unless the gas contributes more to the gravitational potential than expected. No evidence is found for a dependence of this velocity dispersion on distance from the cluster center or stellar mass. We also find that stars with lower extinction (in the front of the cloud) tend to be redshifted compared with stars with somewhat higher extinction (toward the back of the cloud). This data suggest that the stars in IC 348 are converging along the line of sight. We show that this correlation between radial velocity and extinction is unlikely to be spuriously caused by the small cluster rotation of 0.024 ± 0.013 km s −1 arcmin −1 or by correlations between the radial velocities of neighboring stars. This signature, if confirmed, will be the first detection of line of sight convergence in a star cluster. Possible scenarios for reconciling this convergence with IC 348's observed supervirial state include: (a) the cluster is fluctuating around a new virial

Treatment of open tibial fracture with bone defect caused by high velocity missiles: A case report

Directory of Open Access Journals (Sweden)

Golubović Zoran

2013-01-01

Full Text Available Introduction .Tibia fracture caused by high velocity missiles is mostly comminuted and followed by bone defect which makes their healing process extremely difficult and prone to numerous complications. Case Outline. A 34-year-old male was wounded at close range by a semi-automatic gun missile. He was wounded in the distal area of the left tibia and suffered a massive defect of the bone and soft tissue. After the primary treatment of the wound, the fracture was stabilized with an external fixator type Mitkovic, with convergent orientation of the pins. The wound in the medial region of the tibia was closed with the secondary stitch, whereas the wound in the lateral area was closed with the skin transplant after Thiersch. Due to massive bone defect in the area of the rifle-missile wound six months after injury, a medical team placed a reconstructive external skeletal fixator type Mitkovic and performed corticotomy in the proximal metaphyseal area of the tibia. By the method of bone transport (distractive osteogenesis, the bone defect of the tibia was replaced. After the fracture healing seven months from the secondary surgery, the fixator was removed and the patient was referred to physical therapy. Conclusion. Surgical treatment of wounds, external fixation, performing necessary debridement, adequate antibiotic treatment and soft and bone tissue reconstruction are essential in achieving good results in patients with the open tibial fracture with bone defect caused by high velocity missiles. Reconstruction of bone defect can be successfully treated by reconstructive external fixator Mitkovic. [Projekat Ministarstva nauke Republike Srbije, br. III 41017 i br. III 41004

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

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Loh Ter-Hoe

2007-01-01

Full Text Available AbstractSi/Si0.66Ge0.34coupled quantum well (CQW structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD system. The samples were characterized using high resolution x-ray diffraction (HRXRD, cross-sectional transmission electron microscopy (XTEM and photoluminescence (PL spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

SAW propagation characteristics of TeO3/3C-SiC/LiNbO3 layered structure

Science.gov (United States)

Soni, Namrata D.

2018-04-01

Surface acoustic wave (SAW) devices based on Lithium Niobate (LiNbO3) single crystal are advantageous because of its high SAW phase velocity, electromechanical coupling coefficient and cost effectiveness. In the present work a new multi-layered TeO3/3C-SiC/128° Y-X LiNbO3 SAW device has been proposed. SAW propagation properties such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of the TeO3/SiC/128° Y-X LiNbO3 multi layered structure is examined using theoretical calculations. It is found that the integration of 0.09λ thick 3C-SiC over layer on 128° Y-X LiNbO3 increases its electromechanical coupling coefficient from 5.3% to 9.77% and SAW velocity from 3800 ms‑1 to 4394 ms‑1. The SiC/128° Y-X LiNbO3 bilayer SAW structure exhibits a high positive TCD value. A temperature stable layered SAW device could be obtained with introduction of 0.007λ TeO3 over layer on SiC/128° Y-X LiNbO3 bilayer structure without sacrificing the efficiency of the device. The proposed TeO3/3C-SiC/128° Y-X LiNbO3 multi-layered SAW structure is found to be cost effective, efficient, temperature stable and suitable for high frequency application in harsh environment.

Creep, Fatigue and Fracture Behavior of Environmental Barrier Coating and SiC-SiC Ceramic Matrix Composite Systems: The Role of Environment Effects

Science.gov (United States)

Zhu, Dongming; Ghosn, Louis J.

2015-01-01

Advanced environmental barrier coating (EBC) systems for low emission SiCSiC CMC combustors and turbine airfoils have been developed to meet next generation engine emission and performance goals. This presentation will highlight the developments of NASAs current EBC system technologies for SiC-SiC ceramic matrix composite combustors and turbine airfoils, their performance evaluation and modeling progress towards improving the engine SiCSiC component temperature capability and long-term durability. Our emphasis has also been placed on the fundamental aspects of the EBC-CMC creep and fatigue behaviors, and their interactions with turbine engine oxidizing and moisture environments. The EBC-CMC environmental degradation and failure modes, under various simulated engine testing environments, in particular involving high heat flux, high pressure, high velocity combustion conditions, will be discussed aiming at quantifying the protective coating functions, performance and durability, and in conjunction with damage mechanics and fracture mechanics approaches.

Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

DEFF Research Database (Denmark)

Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

2014-01-01

Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements...... on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...... class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported...

Si cycling in a forest biogeosystem – the importance of transient state biogenic Si pools

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M. Sommer

2013-07-01

Full Text Available The relevance of biological Si cycling for dissolved silica (DSi export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi might contribute > 50% to DSi (Gerard et al., 2008. However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%. Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007–04/2011, we quantified (i internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr by BIOME-BGC (version ZALF, (ii related Si budgets, and (iii Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae. We quantified an average Si plant uptake of 35 kg Si ha−1 yr−1 – most of which is recycled to the soil by litterfall – and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha−1. The comparatively high DSi concentrations (6 mg L−1 and DSi exports (12 kg Si ha−1 yr−1 could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

Monte Carlo Simulation of Electron Transport in 4H- and 6H-SiC

International Nuclear Information System (INIS)

Sun, C. C.; You, A. H.; Wong, E. K.

2010-01-01

The Monte Carlo (MC) simulation of electron transport properties at high electric field region in 4H- and 6H-SiC are presented. This MC model includes two non-parabolic conduction bands. Based on the material parameters, the electron scattering rates included polar optical phonon scattering, optical phonon scattering and acoustic phonon scattering are evaluated. The electron drift velocity, energy and free flight time are simulated as a function of applied electric field at an impurity concentration of 1x10 18 cm 3 in room temperature. The simulated drift velocity with electric field dependencies is in a good agreement with experimental results found in literature. The saturation velocities for both polytypes are close, but the scattering rates are much more pronounced for 6H-SiC. Our simulation model clearly shows complete electron transport properties in 4H- and 6H-SiC.

Evolution of a novel Si-18Mn-16Ti-11P alloy in Al-Si melt and its influence on microstructure and properties of high-Si Al-Si alloy

Directory of Open Access Journals (Sweden)

Xiao-Lu Zhou

Full Text Available A novel Si-18Mn-16Ti-11P master alloy has been developed to refine primary Si to 14.7 ± 1.3 μm, distributed uniformly in Al-27Si alloy. Comparing with traditional Cu-14P and Al-3P, Si-18Mn-16Ti-11P provided a much better refining effect, with in-situ highly active AlP. The refined Al-27Si alloy exhibited a CTE of 16.25 × 10−6/K which is slightly higher than that of Sip/Al composites fabricated by spray deposition. The UTS and elongation of refined Al-27Si alloy were increased by 106% and 235% comparing with those of unrefined alloy. It indicates that the novel Si-18Mn-16Ti-11P alloy is more suitable for high-Si Al-Si alloys and may be a candidate for refining hypereutectic Al-Si alloy for electronic packaging applications. Moreover, studies showed that TiP is the only P-containing phase in Si-18Mn-16Ti-11P master alloy. A core-shell reaction model was established to reveal mechanism of the transformation of TiP to AlP in Al-Si melts. The transformation is a liquid-solid diffusion reaction driven by chemical potential difference and the reaction rate is controlled by diffusion. It means sufficient holding time is necessary for Si-18Mn-16Ti-11P master alloy to achieve better refining effect. Keywords: Hypereutectic Al-Si alloy, Primary Si, Refinement, AlP, Thermal expansion behavior, Si-18Mn-16Ti-11P master alloy

High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

Energy Technology Data Exchange (ETDEWEB)

Compaan, A. D.; Deng, X.; Bohn, R. G.

2003-10-01

This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Si materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.

AN EXTREME HIGH-VELOCITY BIPOLAR OUTFLOW IN THE PRE-PLANETARY NEBULA IRAS 08005-2356

Energy Technology Data Exchange (ETDEWEB)

Sahai, R. [Jet Propulsion Laboratory, California Institute of Technology, MS 183-900, Pasadena, CA 91109 (United States); Patel, N. A., E-mail: raghvendra.sahai@jpl.nasa.gov [Harvard-Smithsonian Center for Astrophysics, Cambridge, MA (United States)

2015-09-01

We report interferometric mapping of the bipolar pre-planetary nebula IRAS 08005-2356 (I 08005) with an angular resolution of ∼1″–5″, using the Submillimeter Array, in the {sup 12}CO J = 2–1, 3–2, {sup 13}CO J = 2–1, and SiO J = 5–4 (v = 0) lines. Single-dish observations, using the SMT 10 m, were made in these lines as well as in the CO J = 4–3 and SiO J = 6–5 (v = 0) lines. The line profiles are very broad, showing the presence of a massive (>0.1 M{sub ⊙}), extreme high velocity outflow (V ∼ 200 km s{sup −1}) directed along the nebular symmetry axis derived from the Hubble Space Telescope imaging of this object. The outflow's scalar momentum far exceeds that available from radiation pressure of the central post-AGB star, and it may be launched from an accretion disk around a main-sequence companion. We provide indirect evidence for such a disk from its previously published, broad Hα emission profile, which we propose results from Lyβ emission generated in the disk followed by Raman-scattering in the innermost regions of a fast, neutral wind.

Optimal determination of the elastic constants of woven 2D SiC/SiC composite materials

International Nuclear Information System (INIS)

Mouchtachi, A; Guerjouma, R El; Baboux, J C; Rouby, D; Bouami, D

2004-01-01

For homogeneous materials, the ultrasonic immersion method, associated with a numerical optimization process mostly based on Newton's algorithm, allows the determination of elastic constants for various synthetic and natural composite materials. Nevertheless, a principal limitation of the existing optimization procedure occurs when the considered material is at the limit of the homogeneous hypothesis. Such is the case of the woven bidirectional SiC matrix and SiC fibre composite material. In this study, we have developed two numerical methods for the determination of the elastic constants of the 2D SiC/SiC composite material (2D SiC/SiC). The first one is based on Newton's algorithm: the elastic constants are obtained by minimizing the square deviation between experimental and calculated velocities. The second method is based on the Levenberg-Marquardt algorithm. We show that these algorithms give the same results in the case of homogeneous anisotropic composite materials. For the 2D SiC/SiC composite material, the two methods, using the same measured velocities, give different sets of elastic constants. We then note that the Levenberg-Marquardt algorithm enables a better convergence towards a global set of elastic constants in good agreement with the elastic properties, which can be measured using classical quasi-static methods

Synthesis of SiC microstructures in Si technology by high dose carbon implantation: Etch-stop properties

International Nuclear Information System (INIS)

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Calvo-Barrio, L.; Morante, J.R.; Esteve, J.; Acero, M.C.; Skorupa, W.; Koegler, R.

1997-01-01

The use of high dose carbon ion implantation in Si for the production of membranes and microstructures is investigated. Si wafers were implanted with carbon doses of 10 17 and 5 x 10 17 cm -2 , at an energy of 300 keV and a temperature of 500 C. The structural analysis of these samples revealed the formation of a highly stable buried layer of crystalline β-SiC precipitates aligned with the Si matrix. The etch-stop properties of this layer have been investigated using tetramethyl-ammonium hydroxide as etchant solution. Secondary ion mass spectrometry measurements performed on the etched samples have allowed an estimate of the minimum dose needed for obtaining an etch-stop layer to a value in the range 2 to 3 x 10 17 ions/cm 2 . This behavior has been explained assuming the existence of a percolation process in a SiC/Si binary system. Finally, very thin crystalline membranes and self-standing structures with average surface roughness in the range 6 to 7 nm have been obtained

THE APACHE POINT OBSERVATORY GALACTIC EVOLUTION EXPERIMENT: FIRST DETECTION OF HIGH-VELOCITY MILKY WAY BAR STARS

Energy Technology Data Exchange (ETDEWEB)

Nidever, David L.; Zasowski, Gail; Majewski, Steven R.; Beaton, Rachael L.; Wilson, John C.; Skrutskie, Michael F.; O' Connell, Robert W. [Department of Astronomy, University of Virginia, Charlottesville, VA 22904-4325 (United States); Bird, Jonathan; Schoenrich, Ralph; Johnson, Jennifer A.; Sellgren, Kris [Department of Astronomy and the Center for Cosmology and Astro-Particle Physics, The Ohio State University, Columbus, OH 43210 (United States); Robin, Annie C.; Schultheis, Mathias [Institut Utinam, CNRS UMR 6213, OSU THETA, Universite de Franche-Comte, 41bis avenue de l' Observatoire, F-25000 Besancon (France); Martinez-Valpuesta, Inma; Gerhard, Ortwin [Max-Planck-Institut fuer Extraterrestrische Physik, Giessenbachstrasse, D-85748 Garching (Germany); Shetrone, Matthew [McDonald Observatory, University of Texas at Austin, Fort Davis, TX 79734 (United States); Schiavon, Ricardo P. [Gemini Observatory, 670 North A' Ohoku Place, Hilo, HI 96720 (United States); Weiner, Benjamin [Steward Observatory, 933 North Cherry Street, University of Arizona, Tucson, AZ 85721 (United States); Schneider, Donald P. [Department of Astronomy and Astrophysics, The Pennsylvania State University, University Park, PA 16802 (United States); Allende Prieto, Carlos, E-mail: dln5q@virginia.edu [Instituto de Astrofisica de Canarias, E-38205 La Laguna, Tenerife (Spain); and others

2012-08-20

Commissioning observations with the Apache Point Observatory Galactic Evolution Experiment (APOGEE), part of the Sloan Digital Sky Survey III, have produced radial velocities (RVs) for {approx}4700 K/M-giant stars in the Milky Way (MW) bulge. These high-resolution (R {approx} 22, 500), high-S/N (>100 per resolution element), near-infrared (NIR; 1.51-1.70 {mu}m) spectra provide accurate RVs ({epsilon}{sub V} {approx} 0.2 km s{sup -1}) for the sample of stars in 18 Galactic bulge fields spanning -1 Degree-Sign -32 Degree-Sign . This represents the largest NIR high-resolution spectroscopic sample of giant stars ever assembled in this region of the Galaxy. A cold ({sigma}{sub V} {approx} 30 km s{sup -1}), high-velocity peak (V{sub GSR} Almost-Equal-To +200 km s{sup -1}) is found to comprise a significant fraction ({approx}10%) of stars in many of these fields. These high RVs have not been detected in previous MW surveys and are not expected for a simple, circularly rotating disk. Preliminary distance estimates rule out an origin from the background Sagittarius tidal stream or a new stream in the MW disk. Comparison to various Galactic models suggests that these high RVs are best explained by stars in orbits of the Galactic bar potential, although some observational features remain unexplained.

Behaviors of SiC fibers at high temperature

International Nuclear Information System (INIS)

Colin, C.; Falanga, V.; Gelebart, L.

2010-01-01

On the one hand, considering the improvements of mechanical and thermal behaviours of the last generation of SiC fibers (Hi-Nicalon S, Tyranno SA3); on the other hand, regarding physical and chemical properties and stability under irradiation, SiC/SiC composites are potential candidates for nuclear applications in advanced fission and fusion reactors. CEA must characterize and optimize these composites before their uses in reactors. In order to study this material, CEA is developing a multi-scale approach by modelling from fibers to bulk composite specimen: fibres behaviours must be well known in first. Thus, CEA developed a specific tensile test device on single fibers at high temperature, named MecaSiC. Using this device, we have already characterized the thermoelastic and thermoelectric behaviours of SiC fibers. Additional results about the plastic properties at high temperatures were also obtained. Indeed, we performed tensile tests between 1200 degrees C up to 1700 degrees C to characterize this plastic behaviour. Some thermal annealing, up to 3 hours at 1700 degrees C, had been also performed. Furthermore, we compare the mechanical behaviours with the thermal evolution of the electric resistivity of these SiC fibers. Soon, MecaSiC will be coupled to a new charged particle accelerator. Thus, in this configuration, we will be able to study in-situ irradiation effects on fibre behaviours, as swelling or creep for example

High-velocity winds from a dwarf nova during outburst

Science.gov (United States)

Cordova, F. A.; Mason, K. O.

1982-01-01

An ultraviolet spectrum of the dwarf nova TW Vir during an optical outburst shows shortward-shifted absorption features with edge velocities as high as 4800 km/s, about the escape velocity of a white dwarf. A comparison of this spectrum with the UV spectra of other cataclysmic variables suggests that mass loss is evident only for systems with relatively high luminosities (more than about 10 solar luminosities) and low inclination angles with respect to the observer's line of sight. The mass loss rate for cataclysmic variables is of order 10 to the -11th solar mass per yr; this is from 0.01 to 0.001 of the mass accretion rate onto the compact star in the binary. The mass loss may occur by a mechanism similar to that invoked for early-type stars, i.e., radiation absorbed in the lines accelerates the accreting gas to the high velocities observed.

Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order 0003: SiC High Voltage Converters, N-Type Ohmic Contract Development for SiC Power Devices

National Research Council Canada - National Science Library

Cheng, Lin; Mazzola, Michael S

2006-01-01

... ? SiC interfaces and silicide top surfaces is important for producing uniformly low contact resistances to achieve device operation at high-current levels without hot spot formation and contact degradation...

Preparation and Anodizing of SiCp/Al Composites with Relatively High Fraction of SiCp.

Science.gov (United States)

Wang, Bin; Qu, Shengguan; Li, Xiaoqiang

2018-01-01

By properly proportioned SiC particles with different sizes and using squeeze infiltration process, SiCp/Al composites with high volume fraction of SiC content (Vp = 60.0%, 61.2%, 63.5%, 67.4%, and 68.0%) were achieved for optical application. The flexural strength of the prepared SiC p /Al composites was higher than 483 MPa and the elastic modulus was increased from 174.2 to 206.2 GPa. With an increase in SiC volume fraction, the flexural strength and Poisson's ratio decreased with the increase in elastic modulus. After the anodic oxidation treatment, an oxidation film with porous structure was prepared on the surface of the composite and the oxidation film was uniformly distributed. The anodic oxide growth rate of composite decreased with SiC content increased and linearly increased with anodizing time.

Preparation and Anodizing of SiCp/Al Composites with Relatively High Fraction of SiCp

Directory of Open Access Journals (Sweden)

Bin Wang

2018-01-01

Full Text Available By properly proportioned SiC particles with different sizes and using squeeze infiltration process, SiCp/Al composites with high volume fraction of SiC content (Vp = 60.0%, 61.2%, 63.5%, 67.4%, and 68.0% were achieved for optical application. The flexural strength of the prepared SiCp/Al composites was higher than 483 MPa and the elastic modulus was increased from 174.2 to 206.2 GPa. With an increase in SiC volume fraction, the flexural strength and Poisson’s ratio decreased with the increase in elastic modulus. After the anodic oxidation treatment, an oxidation film with porous structure was prepared on the surface of the composite and the oxidation film was uniformly distributed. The anodic oxide growth rate of composite decreased with SiC content increased and linearly increased with anodizing time.

Preparation and Anodizing of SiCp/Al Composites with Relatively High Fraction of SiCp

Science.gov (United States)

2018-01-01

By properly proportioned SiC particles with different sizes and using squeeze infiltration process, SiCp/Al composites with high volume fraction of SiC content (Vp = 60.0%, 61.2%, 63.5%, 67.4%, and 68.0%) were achieved for optical application. The flexural strength of the prepared SiCp/Al composites was higher than 483 MPa and the elastic modulus was increased from 174.2 to 206.2 GPa. With an increase in SiC volume fraction, the flexural strength and Poisson's ratio decreased with the increase in elastic modulus. After the anodic oxidation treatment, an oxidation film with porous structure was prepared on the surface of the composite and the oxidation film was uniformly distributed. The anodic oxide growth rate of composite decreased with SiC content increased and linearly increased with anodizing time. PMID:29682145

Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Energy Technology Data Exchange (ETDEWEB)

Hayashi, S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Sandhu, R [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Wojtowicz, M [Northrop Grumman Space Technology, Redondo Beach, CA 90278 (United States); Sun, Y [Department of Chemical Engineering, University of California, Los Angeles, CA 90095 (United States); Hicks, R [Department of Chemical Engineering, University of California, Los Angeles, CA 90095 (United States); Goorsky, M S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States)

2005-05-21

Specular and diffuse x-ray reflectivity measurements were employed for wafer bonding studies of surface and interfacial reactions in {approx}800 A thick SiN films deposited on III-V substrates. CuK{sub {alpha}}{sub 1} radiation was employed for these measurements. The as-deposited films show very low surface roughness and uniform, high density SiN. Reflectivity measurements show that an oxygen plasma treatment converts the nitride surface to a somewhat porous SiO{sub x} layer (67 A thick, at 80% of SiO{sub 2} density), with confirmation of the oxide formation from x-ray photoelectron spectroscopy. Reactions at the bonded interface of two oxygen plasma treated SiN layers were examined using a bonded structure from which one of the III-V wafers is removed. Reflectivity measurements of bonded structures annealed at 150 deg. C and 300 deg. C show an increase in the SiO{sub x} layer density and thickness and even a density gradient across this interface. The increase in density is correlated with an increase in bond strength, where after the 300 deg. C anneal, a high interfacial bond strength, exceeding the bulk strength, was achieved.

INCLUSIVE SYSTEMATICS FOR SI-28+SI-28 REACTIONS BETWEEN 20 AND 35 MEV PER NUCLEON

NARCIS (Netherlands)

BOX, PF; GRIFFIOEN, KA; DECOWSKI, P; BOOTSMA, T; GIERLIK, E; VANNIEUWENHUIZEN, GJ; TWENHOFEL, C; KAMERMANS, R; WILSCHUT, HW; GIORNI, A; MORAND, C; DEMEYER, A; GUINET, D

Inclusive velocity spectra of heavy ions produced in the Si-28 + Si-28 reaction at 22, 26, 30, and 35 MeV per nucleon were measured and decomposed into peripheral and central components using an analytical moving-source parametrization. The persistence of incomplete fusion followed by evaporation

Investigation of the separation of americium(III) and europium(III) by high-speed countercurrent chromatography

International Nuclear Information System (INIS)

Wu, J.F.; Jin, Y.R.; Xu, Q.C.; Wang, S.L.; Zhang, L.X.

2005-01-01

The long-lived actinides are the important elements in the radioactive waste ;disposal. Because the ions semi diameter and chemical properties of trivalent actinides(III) and trivalent lanthanides(III) are very similar, the separation between them is very difficult. Yang Yu-Sheng put forward the actinides(III) are softer acid than the lanthanides(III), so the actinides(III) are more easily extracted by the soft extractant contain sulfur or nitrogen than the lanthanides(III). Some research have been done on the separation between actinides(III) and lanthanides(III) using the extractants contain sulfur or nitrogen. The results show that satisfactory separation efficiency was gained. Countercurrent Chromatography (CCC) have many specific advantages, such as free from solid support, permit large sample volume and high flow rate, which is useful in the preconcentration of inorganic solute and inorganic preparation. Some studies were done on the separation of lanthanides or-other inorganic elements by HSCCC, the high-purity reagents prepared by HSCCC or CPC turned out to be successful. In present paper, the investigation of separation between Americium (III) and Euricium (III) by High-Speed Countercurrent Chromatography (HSCCC) were made. The extractant used in the work was prepared by ourselves, which is of the soft extractant contrain sulfur. The effects of separation condition on the separation efficiency of Am and Eu by HSCCC were investigated using dichlorophenyl dithiophosphinic acid in xylene as the stationary phase and 0.1 mol/L NaClO4 as mobile phase, respectively. The results show that mutual separation between Am and Eu can be accomplished. The separation factor increases with the increasing of the concentration of extractant and the pH value of the mobile phase, further more, minishing the flow rate of the mobile phase can also improves the separation efficiency between Am and Eu. The nearly base separation was gained when the flow rate is 0.35 ml/min, the

Coated Porous Si for High Performance On-Chip Supercapacitors

Science.gov (United States)

Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

2014-11-01

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

Crustal composition in the Hidaka Metamorphic Belt estimated from seismic velocity by laboratory measurements

Science.gov (United States)

Yamauchi, K.; Ishikawa, M.; Sato, H.; Iwasaki, T.; Toyoshima, T.

2015-12-01

To understand the dynamics of the lithosphere in subduction systems, the knowledge of rock composition is significant. However, rock composition of the overriding plate is still poorly understood. To estimate rock composition of the lithosphere, it is an effective method to compare the elastic wave velocities measured under the high pressure and temperature condition with the seismic velocities obtained by active source experiment and earthquake observation. Due to an arc-arc collision in central Hokkaido, middle to lower crust is exposed along the Hidaka Metamorphic Belt (HMB), providing exceptional opportunities to study crust composition of an island arc. Across the HMB, P-wave velocity model has been constructed by refraction/wide-angle reflection seismic profiling (Iwasaki et al., 2004). Furthermore, because of the interpretation of the crustal structure (Ito, 2000), we can follow a continuous pass from the surface to the middle-lower crust. We corrected representative rock samples from HMB and measured ultrasonic P-wave (Vp) and S-wave velocities (Vs) under the pressure up to 1.0 GPa in a temperature range from 25 to 400 °C. For example, the Vp values measured at 25 °C and 0.5 GPa are 5.88 km/s for the granite (74.29 wt.% SiO2), 6.02-6.34 km/s for the tonalites (66.31-68.92 wt.% SiO2), 6.34 km/s for the gneiss (64.69 wt.% SiO2), 6.41-7.05 km/s for the amphibolites (50.06-51.13 wt.% SiO2), and 7.42 km/s for the mafic granulite (50.94 wt.% SiO2). And, Vp of tonalites showed a correlation with SiO2 (wt.%). Comparing with the velocity profiles across the HMB (Iwasaki et al., 2004), we estimate that the lower to middle crust consists of amphibolite and tonalite, and the estimated acoustic impedance contrast between them suggests an existence of a clear reflective boundary, which accords well to the obtained seismic reflection profile (Iwasaki et al., 2014). And, we can obtain the same tendency from comparing measured Vp/Vs ratio and Vp/Vs ratio structure model

Hybrid III-V/SOI Resonant Cavity Photodetector

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

2016-01-01

A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization.......A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

High-definition velocity-space tomography of fast-ion dynamics

DEFF Research Database (Denmark)

Salewski, Mirko; Geiger, B.; Jacobsen, A.S.

2016-01-01

Velocity-space tomography of the fast-ion distribution function in a fusion plasma is usually a photon-starved tomography method due to limited optical access and signal-to-noise ratio of fast-ion Dα (FIDA) spectroscopy as well as the strive for high-resolution images. In high-definition tomography...... information to reconstruct where in velocity space the measurements and the simulation disagree. This alternative approach is demonstrated for four-view as well as for two-view FIDA measurements. The high-definition tomography tools allow us to study fast ions in sawtoothing plasmas and the formation of NBI...

Formation of hypereutectic silicon particles in hypoeutectic Al-Si alloys under the influence of high-intensity ultrasonic vibration

Directory of Open Access Journals (Sweden)

Xiaogang Jian

2013-03-01

Full Text Available The modification of eutectic silicon is of general interest since fine eutectic silicon along with fine primary aluminum grains improves mechanical properties and ductilities. In this study, high intensity ultrasonic vibration was used to modify the complex microstructure of aluminum hypoeutectic alloys. The ultrasonic vibrator was placed at the bottom of a copper mold with molten aluminum. Hypoeutectic Al-Si alloy specimens with a unique in-depth profile of microstructure distribution were obtained. Polyhedral silicon particles, which should form in a hypereutectic alloy, were obtained in a hypoeutectic Al-Si alloy near the ultrasonic radiator where the silicon concentration was higher than the eutectic composition. The formation of hypereutectic silicon near the radiator surface indicates that high-intensity ultrasonic vibration can be used to influence the phase transformation process of metals and alloys. The size and morphology of both the silicon phase and the aluminum phase varies with increasing distance from the ultrasonic probe/radiator. Silicon morphology develops into three zones. Polyhedral primary silicon particles present in zone I, within 15 mm from the ultrasonic probe/radiator. Transition from hypereutectic silicon to eutectic silicon occurs in zone II about 15 to 20 祄 from the ultrasonic probe/radiator. The bulk of the ingot is in zone III and is hypoeutectic Al-Si alloy containing fine lamellar and fibrous eutectic silicon. The grain size is about 15 to 25 祄 in zone I, 25 to 35 祄 in zone II, and 25 to 55 祄 in zone III. The morphology of the primary ?Al phase is also changed from dendritic (in untreated samples to globular. Phase evolution during the solidification process of the alloy subjected to ultrasonic vibration is described.

Phase selection and microstructure in directional solidification of glass forming Pd-Si-Cu alloys

Science.gov (United States)

Huo, Yang

Phase selection and microstructure formation during the rapid solidification of alloy melts has been a topic of substantial interest over the last several decades, attributed mainly to the access to novel structures involving metastable crystalline and non-crystalline phases. In this work, Bridgeman type directional solidification was conducted in Pd-Si-Cu glass forming system to study such cooling rate dependent phase transition and microstructure formation. The equilibrium state for Pd-Si-Cu ternary system was investigated through three different works. First of all, phase stabilities for Pd-Si binary system was accessed with respects of first-principles and experiments, showing Pd5Si, Pd9Si2, Pd3Si and Pd 2Si phase are stable all way to zero Kevin while PdSi phase is a high temperature stable phase, and Pd2Si phase with Fe2P is a non-stoichiometry phase. A thermodynamic database was developed for Pd-Si system. Second, crystal structures for compounds with ternary compositions were studied by XRD, SEM and TEM, showing ordered and disordered B2/bcc phases are stable in Pd-rich part. At last, based on many phase equilibria and phase transitions data, a comprehensive thermodynamic discrption for Pd-Si-Cu ternary system was first time to be developed, from which different phase diagrams and driving force for kinetics can be calculated. Phase selection and microstructure formation in directional solidification of the best glass forming composition, Pd 77.5Si16.5Cu6, in this system with growth velocities from 0.005 to 7.5mm/s was systematically studied and the solidification pathways at different conditions were interpreted from thermodynamic simulation. The results show that for growth velocities are smaller than 0.1mm/s Pd 3Si phase is primary phase and Pd9Si2 phase is secondary phase, the difficulty for Pd9Si2 phase nucleation gives rise to the formation of two different eutectic structure. For growth velocities between 0.4 and 1mm/s, instead of Pd3Si phase, Pd9Si2

TYPE Ia SUPERNOVA COLORS AND EJECTA VELOCITIES: HIERARCHICAL BAYESIAN REGRESSION WITH NON-GAUSSIAN DISTRIBUTIONS

International Nuclear Information System (INIS)

Mandel, Kaisey S.; Kirshner, Robert P.; Foley, Ryan J.

2014-01-01

We investigate the statistical dependence of the peak intrinsic colors of Type Ia supernovae (SNe Ia) on their expansion velocities at maximum light, measured from the Si II λ6355 spectral feature. We construct a new hierarchical Bayesian regression model, accounting for the random effects of intrinsic scatter, measurement error, and reddening by host galaxy dust, and implement a Gibbs sampler and deviance information criteria to estimate the correlation. The method is applied to the apparent colors from BVRI light curves and Si II velocity data for 79 nearby SNe Ia. The apparent color distributions of high-velocity (HV) and normal velocity (NV) supernovae exhibit significant discrepancies for B – V and B – R, but not other colors. Hence, they are likely due to intrinsic color differences originating in the B band, rather than dust reddening. The mean intrinsic B – V and B – R color differences between HV and NV groups are 0.06 ± 0.02 and 0.09 ± 0.02 mag, respectively. A linear model finds significant slopes of –0.021 ± 0.006 and –0.030 ± 0.009 mag (10 3 km s –1 ) –1 for intrinsic B – V and B – R colors versus velocity, respectively. Because the ejecta velocity distribution is skewed toward high velocities, these effects imply non-Gaussian intrinsic color distributions with skewness up to +0.3. Accounting for the intrinsic-color-velocity correlation results in corrections to A V extinction estimates as large as –0.12 mag for HV SNe Ia and +0.06 mag for NV events. Velocity measurements from SN Ia spectra have the potential to diminish systematic errors from the confounding of intrinsic colors and dust reddening affecting supernova distances

High performance a-Si solar cells and new fabrication methods for a-Si solar cells

Science.gov (United States)

Nakano, S.; Kuwano, Y.; Ohnishi, M.

1986-12-01

The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method. As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained. For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.

Unsupervised Learning Through Randomized Algorithms for High-Volume High-Velocity Data (ULTRA-HV).

Energy Technology Data Exchange (ETDEWEB)

Pinar, Ali [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Kolda, Tamara G. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Carlberg, Kevin Thomas [Wake Forest Univ., Winston-Salem, MA (United States); Ballard, Grey [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Mahoney, Michael [Univ. of California, Berkeley, CA (United States)

2018-01-01

Through long-term investments in computing, algorithms, facilities, and instrumentation, DOE is an established leader in massive-scale, high-fidelity simulations, as well as science-leading experimentation. In both cases, DOE is generating more data than it can analyze and the problem is intensifying quickly. The need for advanced algorithms that can automatically convert the abundance of data into a wealth of useful information by discovering hidden structures is well recognized. Such efforts however, are hindered by the massive volume of the data and its high velocity. Here, the challenge is developing unsupervised learning methods to discover hidden structure in high-volume, high-velocity data.

Synthesis of SiC decorated carbonaceous nanorods and its hierarchical composites Si@SiC@C for high-performance lithium ion batteries

Energy Technology Data Exchange (ETDEWEB)

Wang, Chundong [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Ostrikov, Kostya [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Plasma Nanoscience, Industrial Innovation Program, CSIRO Manufacturing Flagship, Lindfield, New South Wales 2070 (Australia); Yang, Yonggang [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Wenjun, E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China)

2015-10-15

SiC- based nanomaterials possess superior electric, thermal and mechanical properties. However, due to the tricky synthesis process, which needs to be carried out under high temperature with multi-step reaction procedures, the further application is dramatically limited. Herein, a simple as well as a controllable approach is proposed for synthesis of SiC- based nanostructures under low temperature. Phenyl-bridged polysilsesquioxane was chosen as the starting material to react with magnesium at 650 °C, following which SiC@C nanocomposites were finally obtained, and it maintains the original bent rod-like architecture of polysilsesquioxanes. The possible formation process for the nanocomposites can proposed as well. The electrochemical behaviour of nanocomposites was accessed, verifying that the synthesized SiC@C nanocomposites deliver good electrochemical performance. Moreover, SiC@C also shows to be a promising scaffold in supporting Si thin film electrode in achieving stable cycling performance in lithium ion batteries. - Highlights: • SiC@C bent nanorods were synthesized with a magnesium reaction approach. • Carbon nanorod spines studded with ultrafine β-SiC nanocrystallines was realized. • The synthesized SiC@C keeps the original rod-like structure of polysilsesquioxanes. • The possible formation process for the nanocomposites was analysed and proposed. • Si@SiC@C nanocomposites reveal good electrochemical performance in LIBs.

GaN growth via HVPE on SiC/Si substrates: growth mechanisms

Science.gov (United States)

Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

2017-11-01

The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

Science.gov (United States)

Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

2015-01-13

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

Effects of boron addition on the formation of MoSi2 by combustion synthesis mode

International Nuclear Information System (INIS)

Feng Peizhong; Wu Jie; Islam, S.H.; Liu Weisheng; Niu Jinan; Wang Xiaohong; Qiang Yinghuai

2010-01-01

The combustion synthesis behavior of Mo-Si-B powder was investigated. Test specimens with nominal compositions including MoSi 2 , Mo(Si 0.975 B 0.025 ) 2 , Mo(Si 0.95 B 0.05 ) 2 , Mo(Si 0.925 B 0.075 ) 2 and Mo(Si 0.9 B 0.1 ) 2 were employed. The combustion mode, propagation velocity of combustion wave, combustion temperature and combustion product structure were studied. The results showed that the combustion wave propagated along a spiral trajectory till reaching the bottom of the compacts. The combustion temperature was increased by the addition of boron, to as high as 1922 K in the case of the Mo(Si 0.95 B 0.05 ) 2 sample. However, the flame-front propagation velocity decreased as a result of the addition of boron. The X-ray diffraction results showed that the combustion products of the Mo(Si 0.975 B 0.025 ) 2 and Mo(Si 0.9 B 0.1 ) 2 samples were composed of MoSi 2 with minor MoB. Those of the Mo(Si 0.95 B 0.05 ) 2 and Mo(Si 0.925 B 0.075 ) 2 samples were composed of MoSi 2 with minor MoB and MoB 2 . And traces of Mo 2 B 5 were identified in the Mo(Si 0.95 B 0.05 ) 2 sample.

High-efficient production of SiC/SiO2 core-shell nanowires for effective microwave absorption

KAUST Repository

Zhong, Bo; Sai, Tianqi; Xia, Long; Yu, Yuanlie; Wen, Guangwu

2017-01-01

In the current report, we have demonstrated that the high-efficient production of SiC/SiO2 core-shell nanowires can be achieved through the introduction of trace of water vapor during the chemical vapor deposition process. The yield of the SiC/SiO2 core-shell nanowires is dramatically improved due to the introduction of water vapor. The SiC/SiO2 core-shell nanowires exhibit an excellent microwave absorption property in the frequency range of 2.0–18.0GHz with a very low weight percentage of 0.50wt.% in the absorbers. A minimum reflection loss value of −32.72dB (>99.99% attenuation) at 13.84GHz has been observed with the absorber thickness of 3.0mm. Moreover, the SiC/SiO2 core-shell nanowires based absorber can reach an effective absorption bandwidth (<−10dB) of 5.32GHz with the absorber thickness of 3.5mm. Furthermore, a possible absorption mechanism is also proposed in detail for such effective attenuation of microwave which can be attributed to the dielectric loss and magnetic loss of SiC/SiO2 core-shell nanowires.

High-efficient production of SiC/SiO2 core-shell nanowires for effective microwave absorption

KAUST Repository

Zhong, Bo

2017-02-21

In the current report, we have demonstrated that the high-efficient production of SiC/SiO2 core-shell nanowires can be achieved through the introduction of trace of water vapor during the chemical vapor deposition process. The yield of the SiC/SiO2 core-shell nanowires is dramatically improved due to the introduction of water vapor. The SiC/SiO2 core-shell nanowires exhibit an excellent microwave absorption property in the frequency range of 2.0–18.0GHz with a very low weight percentage of 0.50wt.% in the absorbers. A minimum reflection loss value of −32.72dB (>99.99% attenuation) at 13.84GHz has been observed with the absorber thickness of 3.0mm. Moreover, the SiC/SiO2 core-shell nanowires based absorber can reach an effective absorption bandwidth (<−10dB) of 5.32GHz with the absorber thickness of 3.5mm. Furthermore, a possible absorption mechanism is also proposed in detail for such effective attenuation of microwave which can be attributed to the dielectric loss and magnetic loss of SiC/SiO2 core-shell nanowires.

Velocity field measurements on high-frequency, supersonic microactuators

Science.gov (United States)

Kreth, Phillip A.; Ali, Mohd Y.; Fernandez, Erik J.; Alvi, Farrukh S.

2016-05-01

The resonance-enhanced microjet actuator which was developed at the Advanced Aero-Propulsion Laboratory at Florida State University is a fluidic-based device that produces pulsed, supersonic microjets by utilizing a number of microscale, flow-acoustic resonance phenomena. The microactuator used in this study consists of an underexpanded source jet that flows into a cylindrical cavity with a single, 1-mm-diameter exhaust orifice through which an unsteady, supersonic jet issues at a resonant frequency of 7 kHz. The flowfields of a 1-mm underexpanded free jet and the microactuator are studied in detail using high-magnification, phase-locked flow visualizations (microschlieren) and two-component particle image velocimetry. These are the first direct measurements of the velocity fields produced by such actuators. Comparisons are made between the flow visualizations and the velocity field measurements. The results clearly show that the microactuator produces pulsed, supersonic jets with velocities exceeding 400 m/s for roughly 60 % of their cycles. With high unsteady momentum output, this type of microactuator has potential in a range of ow control applications.

Rapid solidification growth mode transitions in Al-Si alloys by dynamic transmission electron microscopy

International Nuclear Information System (INIS)

Roehling, John D.; Coughlin, Daniel R.; Gibbs, John W.; Baldwin, J. Kevin; Mertens, James C.E.; Campbell, Geoffrey H.; Clarke, Amy J.; McKeown, Joseph T.

2017-01-01

In situ dynamic transmission electron microscope (DTEM) imaging of Al-Si thin-film alloys was performed to investigate rapid solidification behavior. Solidification of alloys with compositions from 1 to 15 atomic percent Si was imaged during pulsed laser melting and subsequent solidification. Solely α-Al solidification was observed in Al-1Si and Al-3Si alloys, and solely kinetically modified eutectic growth was observed in Al-6Si and Al-9Si alloys. A transition in the solidification mode in eutectic and hypereutectic alloys (Al-12Si and Al-15Si) from nucleated α-Al dendrites at lower solidification velocities to planar eutectic growth at higher solidification velocities was observed, departing from trends previously seen in laser-track melting experiments. Comparisons of the growth modes and corresponding velocities are compared with previous solidification models, and implications regarding the models are discussed.

A high 18F-FDOPA uptake is associated with a slow growth rate in diffuse Grade II-III gliomas.

Science.gov (United States)

Isal, Sibel; Gauchotte, Guillaume; Rech, Fabien; Blonski, Marie; Planel, Sophie; Chawki, Mohammad B; Karcher, Gilles; Marie, Pierre-Yves; Taillandier, Luc; Verger, Antoine

2018-04-01

In diffuse Grade II-III gliomas, a high 3,4-dihydroxy-6-( 18 F)-fluoro-L-phenylalanine ( 18 F-FDOPA) positron emission tomography (PET) uptake, with a standardized uptake value (SUV max )/contralateral brain tissue ratio greater than 1.8, was previously found to be consistently associated with the presence of an isocitrate dehydrogenase (IDH) mutation, whereas this mutation is typically associated with a better prognosis. This pilot study was aimed to ascertain the prognostic value of this high 18 F-FDOPA uptake in diffuse Grade II-III gliomas with regard to the velocity of diameter expansion (VDE), which represents an established landmark of better prognosis when below 4 mm per year. 20 patients (42 ± 10 years, 10 female) with newly-diagnosed diffuse Grade II-III gliomas (17 with IDH mutation) were retrospectively included. All had a 18 F-FDOPA PET, quantified with SUV max ratio, along with a serial MRI enabling VDE determination. SUV max ratio was above 1.8 in 5 patients (25%) all of whom had a VDE VDE <4 mm/year in the overall population (45 vs 0%, p = 0.04) and also in the subgroup of patients with IDH mutation (45 vs 0%, p = 0.10). This pilot study shows that in diffuse Grade II-III gliomas, a high 18 F-FDOPA uptake would be predictive of low tumour growth, with a different prognostic significance than IDH mutation. Advances in knowledge: 18 F-FDOPA PET in a single session imaging could have prognostic value in initial diagnosis of diffuse Grade II-III gliomas.

Fabrication of highly oriented D0{sub 3}-Fe{sub 3}Si nanocrystals by solid-state dewetting of Si ultrathin layer

Energy Technology Data Exchange (ETDEWEB)

Naito, Muneyuki, E-mail: naito22@center.konan-u.ac.jp [Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501 (Japan); Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko [Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501 (Japan); Nakao, Motoi [Graduate School of Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550 (Japan); Sudoh, Koichi [The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2013-07-31

In this paper, highly oriented nanocrystals of Fe{sub 3}Si with a D0{sub 3} structure are fabricated on SiO{sub 2} using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO{sub 2} layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe{sub 3}Si nanocrystals with D0{sub 3}, B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe{sub 3}Si nanocrystals with a D0{sub 3} single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0{sub 3}-Fe{sub 3}Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0{sub 3} structure after post-deposition annealing.

SiC nanofibers grown by high power microwave plasma chemical vapor deposition

International Nuclear Information System (INIS)

Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

2003-01-01

Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C

Carotid near-occlusion frequently has high peak systolic velocity on Doppler ultrasound

Energy Technology Data Exchange (ETDEWEB)

Khangure, Simon R.; Machnowska, Matylda; Fox, Allan J.; Hojjat, Seyed-Parsa; Aviv, Richard I. [Sunnybrook Health Sciences Centre, Department of Medical Imaging, Neuroradiology Division, Toronto, ON (Canada); University of Toronto, Department of Medical Imaging, Division of Neuroimaging, Toronto (Canada); Benhabib, Hadas [Sunnybrook Health Sciences Centre, Department of Medical Imaging, Neuroradiology Division, Toronto, ON (Canada); Groenlund, Christer [Umeaa University, Department of Radiation Sciences, Biomedical Engineering, Umeaa (Sweden); Herod, Wendy [Department of Surgery, Sunnybrook Health Sciences Centre, Toronto (Canada); Maggisano, Robert [Department of Surgery, Sunnybrook Health Sciences Centre, Toronto (Canada); University of Toronto, Division of Vascular Surgery, Department of Surgery, Toronto (Canada); Sjoeberg, Anders [Umeaa University, Department of Radiation Sciences, Biomedical Engineering, Umeaa (Sweden); Umeaa University, Department of Pharmacology and Clinical Neuroscience, Umeaa (Sweden); Wester, Per [Umeaa University, Department of Public Health and Clinical Medicine, Umeaa (Sweden); Karolinska Institutet Danderyds Hospital, Department of Clinical Sciences, Stockholm (Sweden); Hopyan, Julia [University of Toronto, Division of Neurology, Department of Medicine, Toronto (Canada); Johansson, Elias [Umeaa University, Department of Pharmacology and Clinical Neuroscience, Umeaa (Sweden); Umeaa University, Department of Public Health and Clinical Medicine, Umeaa (Sweden)

2018-01-15

Carotid near-occlusion is a tight atherosclerotic stenosis of the internal carotid artery (ICA) resulting in decrease in diameter of the vessel lumen distal to the stenosis. Near-occlusions can be classified as with or without full collapse, and may have high peak systolic velocity (PSV) across the stenosis, mimicking conventional > 50% carotid artery stenosis. We aimed to determine how frequently near-occlusions have high PSV in the stenosis and determine how accurately carotid Doppler ultrasound can distinguish high-velocity near-occlusion from conventional stenosis. Included patients had near-occlusion or conventional stenosis with carotid ultrasound and CT angiogram (CTA) performed within 30 days of each other. CTA examinations were analyzed by two blinded expert readers. Velocities in the internal and common carotid arteries were recorded. Mean velocity, pulsatility index, and ratios were calculated, giving 12 Doppler parameters for analysis. Of 136 patients, 82 had conventional stenosis and 54 had near-occlusion on CTA. Of near-occlusions, 40 (74%) had high PSV (≥ 125 cm/s) across the stenosis. Ten Doppler parameters significantly differed between conventional stenosis and high-velocity near-occlusion groups. However, no parameter was highly sensitive and specific to separate the groups. Near-occlusions frequently have high PSV across the stenosis, particularly those without full collapse. Carotid Doppler ultrasound does not seem able to distinguish conventional stenosis from high-velocity near-occlusion. These findings question the use of ultrasound alone for preoperative imaging evaluation. (orig.)

Ostwald ripening of faceted Si particles in an Al-Si-Cu melt

International Nuclear Information System (INIS)

Shahani, A. J.; Xiao, X.; Skinner, K.; Peters, M.; Voorhees, P. W.

2016-01-01

The microstructural evolution of an Al-Si-Cu alloy during Ostwald ripening is imaged via synchrotron-based, four-dimensional (i.e., space and time resolved) X-ray tomography. Samples of composition Al-32 wt%Si-15 wt%Cu were annealed isothermally at 650 °C, in the two-phase solid-liquid regime, while tomographic projections were collected in situ over the course of five hours. Advances in experimental methods and computational approaches enable us to characterize the local interfacial curvatures and velocities during ripening. The sequence of three-dimensional reconstructions and interfacial shape distributions shows highly faceted Si particles in a copper-enriched liquid, that become increasingly isotropic or rounded over time. In addition, we find that the coarsening rate constant is approximately the same in the binary and ternary systems. By coupling these experimental measurements with CALPHAD modeling and ab initio molecular dynamics simulation, we assess the influence of Cu on the coarsening process. Lastly, we find the unusual “pinning” of microstructure at the junction between rough and smooth interfaces and suggest a mechanism for this behavior.

The SDSS-III DR12 MARVELS radial velocity data release: the first data release from the multiple object Doppler exoplanet survey

Science.gov (United States)

Ge, Jian; Thomas, Neil B.; Li, Rui; Senan Seieroe Grieves, Nolan; Ma, Bo; de Lee, Nathan M.; Lee, Brian C.; Liu, Jian; Bolton, Adam S.; Thakar, Aniruddha R.; Weaver, Benjamin; SDSS-Iii Marvels Team

2015-01-01

We present the first data release from the SDSS-III Multi-object APO Radial Velocity Exoplanet Large-area Survey (MARVELS) through the SDSS-III DR12. The data include 181,198 radial velocity (RV) measurements for a total of 5520 different FGK stars with V~7.6-12, of which more than 80% are dwarfs and subdwarfs while remainders are GK giants, among a total of 92 fields nearly randomly spread out over the entire northern sky taken with a 60-object MARVELS dispersed fixed-delay interferometer instrument over four years (2008-2012). There were 55 fields with a total of 3300 FGK stars which had 14 or more observations over about 2-year survey window. The median number of observations for these plates is 27 RV measurements. This represents the largest homogeneous sample of precision RV measurements of relatively bright stars. In this first released data, a total of 18 giant planet candidates, 16 brown dwarfs, and over 500 binaries with additional 96 targets having RV variability indicative of a giant planet companion are reported. The released data were produced by the MARVELS finalized 1D pipeline. We will also report preliminary statistical results from the MARVELS 2D data pipeline which has produced a median RV precision of ~30 m/s for stable stars.

Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

International Nuclear Information System (INIS)

Chung, C-K; Wu, B-H

2006-01-01

A novel approach for the formation of SiC nanoparticles (np-SiC) is reported. Deposition of Si/C/Si multilayers on Si(100) wafers by ultra-high-vacuum ion beam sputtering was followed by thermal annealing in vacuum for conversion into SiC nanoparticles. The annealing temperature significantly affected the size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 0 C, while a few particles started to appear when the annealing temperature was increased to 700 0 C. At an annealing temperature of 900 0 C, many small SiC nanoparticles, of several tens of nanometres, surrounding larger submicron ones appeared with a particle density approximately 16 times higher than that observed at 700 0 C. The higher the annealing temperature was, the larger the nanoparticle size, and the higher the density. The higher superheating at 900 0 C increased the amount of stable nuclei, and resulted in a higher particle density compared to that at 700 0 C. These particles grew larger at 900 0 C to reduce the total surface energy of smaller particles due to the higher atomic mobility and growth rate. The increased free energy of stacking defects during particle growth will limit the size of large particles, leaving many smaller particles surrounding the large ones. A mechanism for the np-SiC formation is proposed in this paper

SiC detectors to monitor ionizing radiations emitted from nuclear events and plasmas

Science.gov (United States)

Torrisi, L.; Cannavò, A.

2016-09-01

Silicon Carbide (SiC) semiconductor detectors are increasingly employed in Nuclear Physics for their advantages with respect to traditional silicon (Si). Such detectors show an energy resolution, charge mobility, response velocity and detection efficiency similar to Si detectors. However, the higher band gap (3.26 eV), the lower leakage current (∼10 pA) maintained also at room temperature, the higher radiation hardness and the higher density with respect to Si represent some indisputable advantages characterizing such detectors. The devices can be employed at high temperatures, at high absorbed doses and in the case of high visible light intensities, for example, in plasma, for limited exposition times without damage. Generally SiC Schottky diodes are employed in reverse polarization with an active region depth of the order of 100 µm, purity below 1014 cm-3 and an active area lower than 1 cm2. Measurements in the regime of proportionality with the radiation energy released in the active region and measurements in time-of-flight configuration are employed for nuclear emission events produced at both low and high fluences. Alpha spectra demonstrated an energy resolution of about 1.3% at 5.8 MeV. Radiation emission from laser-generated plasma can be monitored in terms of detected photons, electrons and ions, using the laser pulse as a start signal and the radiation detection as a stop signal, enabling to measure the ion velocity by knowing the target-detector flight distance. SiC spectra acquired in the Messina University laboratories using radioactive ion sources and at the PALS laboratory facility in Prague (Czech Republic) are presented. A preliminary study of the use of SiC detectors, embedded in a water equivalent polymer, as a dosimeter is presented and discussed.

Wafer-scale high-throughput ordered arrays of Si and coaxial Si/Si(1-x)Ge(x) wires: fabrication, characterization, and photovoltaic application.

Science.gov (United States)

Pan, Caofeng; Luo, Zhixiang; Xu, Chen; Luo, Jun; Liang, Renrong; Zhu, Guang; Wu, Wenzhuo; Guo, Wenxi; Yan, Xingxu; Xu, Jun; Wang, Zhong Lin; Zhu, Jing

2011-08-23

We have developed a method combining lithography and catalytic etching to fabricate large-area (uniform coverage over an entire 5-in. wafer) arrays of vertically aligned single-crystal Si nanowires with high throughput. Coaxial n-Si/p-SiGe wire arrays are also fabricated by further coating single-crystal epitaxial SiGe layers on the Si wires using ultrahigh vacuum chemical vapor deposition (UHVCVD). This method allows precise control over the diameter, length, density, spacing, orientation, shape, pattern and location of the Si and Si/SiGe nanowire arrays, making it possible to fabricate an array of devices based on rationally designed nanowire arrays. A proposed fabrication mechanism of the etching process is presented. Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, we built solar cells based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage (V(oc)) of 650 mV, a short-circuit current density (J(sc)) of 8.38 mA/cm(2), a fill factor of 0.60, and an energy conversion efficiency (η) of 3.26%. Such a p-n radial structure will have a great potential application for cost-efficient photovoltaic (PV) solar energy conversion. © 2011 American Chemical Society

Microstructure of III-N semiconductors related to their applications in optoelectronics

Science.gov (United States)

Leszczynski, M.; Czernetzki, R.; Sarzynski, M.; Krysko, M.; Targowski, G.; Prystawko, P.; Bockowski, M.; Grzegory, I.; Suski, T.; Domagala, J.; Porowski, S.

2005-03-01

There has been more than a decade since Shuji Nakamura from Japanese company Nichia constructed the first blue LED based on structure of (AlGaIn)N semiconductor and eight years since he made the first blue laser diode (LD). This work gives a survey on the current technological status with green/blue/violet/UV optoelectronics based on III-N semiconductors in relation with their microstructure. The following devices are presented: i) Low-power green and blue LEDs, ii) High-power LEDs targeting solid-state white lighting, iii) Low-power violet LDs for high definition DVD market, iv) High-power violet LDs, v) UV LEDs. The discussion will be focused on three main technological problems related to the microstructure of (AlGaIn)N layers in emitters based on III-N semiconductors: i) high density of dislocations in epitaxial layers of GaN on foreign substrates (sapphire, SiC, GaAs), ii), presence of strains, iii) atom segregation in ternary and quaternary compounds.

Fabrication of Al-20 wt%Si powder using scrap Si by ultra high-energy milling process

Energy Technology Data Exchange (ETDEWEB)

Kang, Won-Kyung [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, 275, Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of); Y Latin-Small-Letter-Dotless-I lmaz, Fikret [Department of Physics, Faculty of Art and Science, Gaziosmanpasa University, Tasliciftlik Campus, 60240 Tokat (Turkey); Kim, Hyo-Seob; Koo, Jar-Myung [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, 275, Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of); Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, 275, Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of)

2012-09-25

Highlights: Black-Right-Pointing-Pointer High energy ball milling process has been successfully employed to produce Al-20Si alloy using scrap Si powders. Black-Right-Pointing-Pointer Fully finer and homogenous structure could be achieved after 60 min of milling time. Black-Right-Pointing-Pointer Si particles were not dissolved but uniformly dispersed in the Al matrix in a milled state. Black-Right-Pointing-Pointer The hardness of as-milled Al-20Si powder increased steadily with the increase of milling time. Black-Right-Pointing-Pointer Grain size and dispersion strengthening are two mechanisms being responsible for hardness increment. - Abstract: In this study, microstructural evolution and mechanical properties of Al-20 wt%Si and pure Al powders fabricated by ultra high-energy ball milling technique were investigated as a function of milling time. The microstructure and mechanical properties of the as-milled powders were examined by scanning electron microscope (SEM), energy dispersive spectrometry (EDS), X-ray diffractometer (XRD) and Vickers hardness tester. SEM observation showed that the particle size increased at an early stage of milling, and then decreased drastically with further milling. XRD and cross-sectional EDS-mapping analyses revealed that Si particles were not dissolved but uniformly dispersed in the Al matrix in a milled state. Vickers hardness of both pure Al and Al-Si powder increases with milling time, which attributes to the grain size strengthening and dispersion strengthening.

High thermal conductivity SiC/SiC composites for fusion applications -- 2

International Nuclear Information System (INIS)

Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

1998-01-01

This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

Rheology of serpentinite in high-temperature and low-slip-velocity regime

Science.gov (United States)

Takahashi, M.; Uehara, S.; Mizoguchi, K.; Takeda, N.; Masuda, K.

2009-12-01

This study was designed to clarify the rheology of serpentinite experimentally, related both the sliding velocity and the temperature. The frictional behavior of serpentinite is of particular interest in the study of earthquake generation processes along subducting plates and transform faults. Previous studies [Reinen et al., 1991-93] revealed that the serpentinites indicated two-mechanical behaviors at velocity-step test: ‘state-variable dominated behavior’ at relatively higher velocity (0.1-10 μm/sec) and ‘flow-dominated behavior’ at lower velocity (less than 0.1 μm/sec). Such complexity on the frictional behavior could make it complicated to forecast on the slip acceleration process from the plate motion velocity to the earthquake. Even under the room-temperature condition, those multiple behavior could be observed, thus, serpentinite can be a model substance to present a new constitutive law at the brittle-ductile transition regime. We, therefore, focus to discuss the transient behaviors of serpentinite at the velocity-step test. We used a gas-medium, high-pressure, and high-temperature triaxial testing machine belonging to the National Institute of Advanced Industrial Science and Technology (AIST), Japan. Sliding deformation was applied on the thin zone of the serpentinite gouge (1.0 g of almost pure antigorite powder) sandwiched between two alumina blocks with oblique surfaces at 30° to the axis. All experiments were carried out under a set of constant conditions, 100 MPa of the confining pressure (Ar-gas) and 30 MPa of the pore pressure (distilled water). The temperature conditions were varied from the room-temperature to 500° C, and three sliding velocity-regimes were adopted: low (0.0115 - 0.115 μm/sec), middle (0.115 - 1.15 μm/sec) and high (1.15 - 11.5 μm/sec) velocity regimes. In each velocity regime, the sliding velocity was increased or decreased in a stepwise fashion, and then we observed the transient behaviors until it reached the

Molecular beam epitaxy of InN nanowires on Si

Science.gov (United States)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

2015-10-01

We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.

The millimeter-wave spectrum of highly vibrationally excited SiO

International Nuclear Information System (INIS)

Mollaaghababa, R.; Gottlieb, C.A.; Vrtilek, J.M.; Thaddeus, P.

1991-01-01

The millimeter-wave rotational spectra of SiO in high vibrational states (v = 0-40) in its electronic ground state were measured between 228 and 347 GHz in a laboratory discharge through SiH4 and CO. On ascending the vibrational ladder, populations decline precipitously for the first few levels, with a vibrational temperature of about 1000 K; at v of roughly 3, however, they markedly flatten out, and from there to v of roughly 40 the temperature is of the order of 10,000 K. With the Dunham coefficients determined here, the rotational spectrum of highly vibrationally excited SiO can now be calculated into the far-infrared to accuracies required for radioastronomy. Possible astronomical sources of highly vibrationally excited SiO are certain stellar atmospheres, ultracompact H II regions, very young supernova ejecta, and dense interstellar shocks. 16 refs

The Influence of Pressure Die Casting Parameters on the Castability of AlSi11-SiCp Composites

Directory of Open Access Journals (Sweden)

Konopka Z.

2015-03-01

Full Text Available The paper presents the method of preparing a composite slurry composed of AlSi11 alloy matrix and 10 vol.% of SiC particles, as well as the method of its high-pressure die casting and the measurement results concerning the castability of the obtained composite. Composite castings were produced at various values of the piston velocity in the second stage of injection, diverse intensification pressure values, and various injection gate width values. There were found the regression equations describing the change of castability of the examined composite as a function of pressure die casting process parameters. The conclusion gives the analysis and the interpretation of the obtained results.

Theoretical Research Progress in High-Velocity/Hypervelocity Impact on Semi-Infinite Targets

Directory of Open Access Journals (Sweden)

Yunhou Sun

2015-01-01

Full Text Available With the hypervelocity kinetic weapon and hypersonic cruise missiles research projects being carried out, the damage mechanism for high-velocity/hypervelocity projectile impact on semi-infinite targets has become the research keystone in impact dynamics. Theoretical research progress in high-velocity/hypervelocity impact on semi-infinite targets was reviewed in this paper. The evaluation methods for critical velocity of high-velocity and hypervelocity impact were summarized. The crater shape, crater scaling laws and empirical formulae, and simplified analysis models of crater parameters for spherical projectiles impact on semi-infinite targets were reviewed, so were the long rod penetration state differentiation, penetration depth calculation models for the semifluid, and deformed long rod projectiles. Finally, some research proposals were given for further study.

High temperature oxidation behavior of SiC coating in TRISO coated particles

International Nuclear Information System (INIS)

Liu, Rongzheng; Liu, Bing; Zhang, Kaihong; Liu, Malin; Shao, Youlin; Tang, Chunhe

2014-01-01

Highlights: • High temperature oxidation tests of SiC coating in TRISO particles were carried out. • The dynamic oxidation process was established. • Oxidation mechanisms were proposed. • The existence of silicon oxycarbides at the SiO 2 /SiC interface was demonstrated. • Carbon was detected at the interface at high temperatures and long oxidation time. - Abstract: High temperature oxidation behavior of SiC coatings in tristructural-isotropic (TRISO) coated particles is crucial to the in-pile safety of fuel particles for a high temperature gas cooled reactor (HTGR). The postulated accident condition of air ingress was taken into account in evaluating the reliability of the SiC layer. Oxidation tests of SiC coatings were carried out in the ranges of temperature between 800 and 1600 °C and time between 1 and 48 h in air atmosphere. Based on the microstructure evolution of the oxide layer, the mechanisms and kinetics of the oxidation process were proposed. The existence of silicon oxycarbides (SiO x C y ) at the SiO 2 /SiC interface was demonstrated by X-ray photospectroscopy (XPS) analysis. Carbon was detected by Raman spectroscopy at the interface under conditions of very high temperatures and long oxidation time. From oxidation kinetics calculation, activation energies were 145 kJ/mol and 352 kJ/mol for the temperature ranges of 1200–1500 °C and 1550–1600 °C, respectively

Management of High-Velocity Injuries of the Head and Neck.

Science.gov (United States)

Majors, Jacob S; Brennan, Joseph; Holt, G Richard

2017-11-01

Trauma centers must prepare to manage high-velocity injuries resulting from a mass casualty incidents as global terrorism becomes a greater concern and an increasing risk. The most recent conflicts in Iraq and Afghanistan have significantly improved understanding of battlefield trauma and how to appropriately address these injures. This article applies combat surgery experience to civilian situations, outlines the physiology and kinetics of high-velocity injuries, and reviews applicable triage and management strategies. Published by Elsevier Inc.

Dissolution of Si in Molten Al with Gas Injection

Science.gov (United States)

Seyed Ahmadi, Mehran

Silicon is an essential component of many aluminum alloys, as it imparts a range of desirable characteristics. However, there are considerable practical difficulties in dissolving solid Si in molten Al, because the dissolution process is slow, resulting in material and energy losses. It is thus essential to examine Si dissolution in molten Al, to identify means of accelerating the process. This thesis presents an experimental study of the effect of Si purity, bath temperature, fluid flow conditions, and gas stirring on the dissolution of Si in molten Al, plus the results of physical and numerical modeling of the flow to corroborate the experimental results. The dissolution experiments were conducted in a revolving liquid metal tank to generate a bulk velocity, and gas was introduced into the melt using top lance injection. Cylindrical Si specimens were immersed into molten Al for fixed durations, and upon removal the dissolved Si was measured. The shape and trajectory of injected bubbles were examined by means of auxiliary water experiments and video recordings of the molten Al free surface. The gas-agitated liquid was simulated using the commercial software FLOW-3D. The simulation results provide insights into bubble dynamics and offer estimates of the fluctuating velocities within the Al bath. The experimental results indicate that the dissolution rate of Si increases in tandem with the melt temperature and bulk velocity. A higher bath temperature increases the solubility of Si at the solid/liquid interface, resulting in a greater driving force for mass transfer, and a higher liquid velocity decreases the resistance to mass transfer via a thinner mass boundary layer. Impurities (with lower diffusion coefficients) in the form of inclusions obstruct the dissolution of the Si main matrix. Finally, dissolution rate enhancement was observed by gas agitation. It is postulated that the bubble-induced fluctuating velocities disturb the mass boundary layer, which

Development of a high velocity rain erosion test method

Energy Technology Data Exchange (ETDEWEB)

Chung, Dong Teak; Jin, Doo Han [Korea University of Technology and Education, Cheonan (Korea, Republic of); Kang, Hyung [Agency for Defense Development, Daejeon (Korea, Republic of)

2009-07-01

The nose of a missile, flying through raining region with a supersonic speed, is subjected to the rain erosion because the nose is made of a brittle ceramic material. A simple yet very effective rain erosion test method is developed. The sabot assembly similar to the hypodermic syringe carries specific amount of water is launched by a low pressure air gun. After the stopper stop the sabot assembly by impact, the steel plunger continues moving toward to squeeze the silicon rubber in front. The pressurized silicon rubber then is squeezed through the orifice in front of the sabot at high velocity, thus, accelerates the water droplet to higher velocity. The droplet velocity up to 800m/s is successfully attained using a low pressure air gun. The ceramic specimen assembly is placed in front of the high speed water droplet and the rain erosion damage on the surface of the specimen is observed.

Investigation of the atomic interface structure of mesotaxial Si/CoSi2(100) layers formed by high-dose implantation

International Nuclear Information System (INIS)

Bulle-Lieuwma, C.W.T.; Jong, A.F. de; Vandenhoudt, D.E.W.

1991-01-01

Aligned mesotaxial films of CoSi 2 in monocrystalline (100) oriented Si substrates have been formed by high-dose ion implantation of Co, followed by a high temperature treatment. The atomic structures of both the lower and upper Si/CoSi 2 (100) interfaces of the buried CoSi 2 layer have been investigated by high-resolution electron microscopy (HREM) combined with image simulations. A domain-like structure is observed consisting of areas with different interfaces. In order to derive the atomic configuration, image simulations of different proposed models are presented. By comparing simulated images and HREM images, two different atomic structure models for the Si/CoSi 2 (100) interface have been found. In the first model the interfacial Co atoms are six-fold coordinated and the tetrahedral coordination and bond lengths of silicon atoms are everywhere maintained. In the second model we found evidence for a 2 x 1 interface reconstruction, involving a difference in composition. The interfacial Co atoms are seven-fold coordinated. It is shown that the boundaries between the domains are associated with interfacial dislocations of edge-type with Burgers vectors b a/4 inclined and b = a/2 parallel to the interfacial plane. (author)

Strong Velocity-Weakening of Nanograins at High Slip-Rates

Science.gov (United States)

Han, R.; Hirose, T.; Ando, J.

2008-12-01

It has been observed that slip localization zones in some experimental and natural faults consist of crystalline or amorphous nanograins of different minerals. Prolonged grinding of silicate rocks (e.g., quartz rock and granite) is known to produce amorphous silica nanograins and mechanical properties of the material (especially under wet condition) have been attributed to a mechanism of fault weakening. Also, recent high- velocity friction tests on carbonate rocks showed that faults can be weakened by thermal decomposition of calcite into nanograins of lime and carbon dioxide and the lubrication effect of the nanograins would be critical for the fault weakening. However, mechanical behavior(s) and friction mechanism(s) of fault slip zones with nanograins, especially at high slip-rates, are still poorly understood, despite their potential importance to the understanding of seismic faulting. In this contribution, we show you our experimental results indicating velocity-weakening of nanograins (probably caused by still unknown mechanical behaviors of nanograins) rather than by temperature-related weakening behavior. In our high-velocity friction tests on Carrara marble at seismic slip-rates, we have tried to "cool" the simulated fault with liquid nitrogen and compressed air during frictional sliding, and found, in the simulated fault coated with nanopowders of lime (CaO) formed by thermal decomposition, no correlation between friction and temperature measured with thermocouples (i.e., no temperature-related weakening behavior), although strong "velocity-weakening" behavior appeared. The observation was confirmed by another experiment: from (1) the calculated "maximum" sliding surface temperature [Carslaw and Jaeger, 1959] using the mechanical data, with an assumption of strong slip localization into a very thin layer, and (2) the measured temperature with thermocouples at a place just below the sliding surface and close to the periphery of the specimen, it was found

Si cycling in a forest biogeosystem - the importance of anthropogenic perturbation and induced transient state of biogenic Si pools

Science.gov (United States)

Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Puppe, D.; Wanner, M.; Kaczorek, D.

2012-12-01

The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to total DSi (Gerard et~al., 2008). However, the actual number of biogeosystem studies is rather limited for generalised conclusions. To cover one end of controlling factors on DSi - weatherable minerals content - we studied a~forested site with absolute quartz dominance (> 95%). Hence, we hypothesise minimal effects of chemical weathering of silicates on DSi. During a~four year observation period (May 2007-April 2011) we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (vers. ZALF), (ii) related Si budgets, and, (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time both compartments of biogenic Si in soils were analysed, i.e. phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. High DSi concentrations (6 mg l-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic phytolith Si pool seems to be the main process for the DSi observed. We identified forest management, i.e. selective extraction of pine trees 20 yr ago followed by a disappearance of grasses, as the most probable control for the phenomena observed and hypothesised the biogeosystem to be in a transient state in terms of Si cycling.

Periodically structured Si pillars for high-performing heterojunction photodetectors

Science.gov (United States)

Melvin David Kumar, M.; Yun, Ju-Hyung; Kim, Joondong

2015-03-01

A periodical array of silicon (Si) micro pillar structures was fabricated on Si substrates using PR etching process. Indium tin oxide (ITO) layer of 80 nm thickness was deposited over patterned Si substrates so as to make ITO/n-Si heterojunction devices. The influences of width and period of pillars on the optical and electrical properties of prepared devices were investigated. The surface morphology of the Si substrates revealed the uniform array of pillar structures. The 5/10 (width/period) Si pillar pattern reduced the optical reflectance to 6.5% from 17% which is of 5/7 pillar pattern. The current rectifying ratio was found higher for the device in which the pillars are situated in optimum periods. At both visible (600 nm) and near infrared (900 nm) range of wavelengths, the 5/7 and 5/10 pillar patterned device exhibited the better photoresponses which are suitable for making advanced photodetectors. This highly transmittance and photoresponsive pillar patterned Si substrates with an ITO layer would be a promising device for various photoelectric applications.

Atomic collision experiments utilizing low-velocity, highly-charged ion beams

International Nuclear Information System (INIS)

Johnson, B.M.; Jones, K.W.; Meron, M.

1983-01-01

Intense beams of highly-stripped ions are now routinely produced at low velocities using the Brookhaven dual MP-tandems in a unique four-stage accel/decel mode. This mode of operation combines three stages of acceleration, stripping at high energy, and one stage of deceleration to near-zero velocity. To date, experiments have used 10-100 nA beams of bare and few-electron heavy ions at energies as low as 0.2 MeV/amu, and upgrades of the facility should push the lower limit below 0.1 MeV/amu. Recent experiments, such as measurements of charge transfer and x-ray production for S 6 - 16 + on He and Ar at 6-20 MeV and P(b) measurements for MO x-rays produced in Cl 16 + + Ar collisions at 20, 10 and 5 MeV have demonstrated the usefulness of highly-stripped, low-velocity projectiles. These experiments and a few possibilities for future experiments are discussed

Atomic collision experiments utilizing low-velocity, highly-charged ion beams

International Nuclear Information System (INIS)

Johnson, B.M.; Jones, K.W.; Meron, M.

1982-01-01

Intense beams of highly-stripped ions are now routinely produced at low velocities using the Brookhaven dual MP-tandens in a unique four-stage accel/decel mode. This mode of operation combines three stages of acceleration, stripping at high energy, and one stage of deceleration to near-zero velocity. To date, experiments have used 10-100 nA beams of bare and few-electron heavy ions at energies as low as 0.2 MeV/amu, and upgrades of the facility should push the lower limit below 0.1 MeV/amu. Recent experiments, such as measurements of charge transfer and x-ray production for S/sup 6-16+/ on He and Ar at 6 to 20 MeV and P(b) measurements for MO x-rays produced in Cl 16 + + Ar collisions at 20, 10, and 5 MeV have demonstrated the usefulness of highly-stripped, low-velocity projectiles. These experiments and a few possibilities for future experiments are discussed

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

International Nuclear Information System (INIS)

Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

2013-01-01

Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

Revision of the Li13Si4 structure.

Science.gov (United States)

Zeilinger, Michael; Fässler, Thomas F

2013-11-06

Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li-Si system is the phase Li13Si4 (trideca-lithium tetra-silicide), the structure of which has been determined previously [Frank et al. (1975 ▶). Z. Naturforsch. Teil B, 30, 10-13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i) the introduction of a split position for one Li site [occupancy ratio 0.838 (7):0.162 (7)], (ii) the anisotropic refinement of atomic displacement parameters for all atoms, and (iii) a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si-Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si-Si dumbbells at z = 0.5.

Population III Stars and Remnants in High-redshift Galaxies

Science.gov (United States)

Xu, Hao; Wise, John H.; Norman, Michael L.

2013-08-01

Recent simulations of Population III star formation have suggested that some fraction form in binary systems, in addition to having a characteristic mass of tens of solar masses. The deaths of metal-free stars result in the initial chemical enrichment of the universe and the production of the first stellar-mass black holes. Here we present a cosmological adaptive mesh refinement simulation of an overdense region that forms a few 109 M ⊙ dark matter halos and over 13,000 Population III stars by redshift 15. We find that most halos do not form Population III stars until they reach M vir ~ 107 M ⊙ because this biased region is quickly enriched from both Population III and galaxies, which also produce high levels of ultraviolet radiation that suppress H2 formation. Nevertheless, Population III stars continue to form, albeit in more massive halos, at a rate of ~10-4 M ⊙ yr-1 Mpc-3 at redshift 15. The most massive starless halo has a mass of 7 × 107 M ⊙, which could host massive black hole formation through the direct gaseous collapse scenario. We show that the multiplicity of the Population III remnants grows with halo mass above 108 M ⊙, culminating in 50 remnants located in 109 M ⊙ halos on average. This has implications that high-mass X-ray binaries and intermediate-mass black holes that originate from metal-free stars may be abundant in high-redshift galaxies.

Experimental and numerical studies of high-velocity impact fragmentation

Energy Technology Data Exchange (ETDEWEB)

Kipp, M.E.; Grady, D.E.; Swegle, J.W.

1993-08-01

Developments are reported in both experimental and numerical capabilities for characterizing the debris spray produced in penetration events. We have performed a series of high-velocity experiments specifically designed to examine the fragmentation of the projectile during impact. High-strength, well-characterized steel spheres (6.35 mm diameter) were launched with a two-stage light-gas gun to velocities in the range of 3 to 5 km/s. Normal impact with PMMA plates, thicknesses of 0.6 to 11 mm, applied impulsive loads of various amplitudes and durations to the steel sphere. Multiple flash radiography diagnostics and recovery techniques were used to assess size, velocity, trajectory and statistics of the impact-induced fragment debris. Damage modes to the primary target plate (plastic) and to a secondary target plate (aluminum) were also evaluated. Dynamic fragmentation theories, based on energy-balance principles, were used to evaluate local material deformation and fracture state information from CTH, a three-dimensional Eulerian solid dynamics shock wave propagation code. The local fragment characterization of the material defines a weighted fragment size distribution, and the sum of these distributions provides a composite particle size distribution for the steel sphere. The calculated axial and radial velocity changes agree well with experimental data, and the calculated fragment sizes are in qualitative agreement with the radiographic data. A secondary effort involved the experimental and computational analyses of normal and oblique copper ball impacts on steel target plates. High-resolution radiography and witness plate diagnostics provided impact motion and statistical fragment size data. CTH simulations were performed to test computational models and numerical methods.

Teachers' Guide to Music Appreciation III A and III B in the Senior High School.

Science.gov (United States)

Scott, J. Mark; Dawkins, Barbara R.

This guide to music appreciation courses was developed for use in senior high schools in Duval County, Jacksonville, Florida. Music Appreciation III A examines the development of music, from the Gothic period through the Classical period. Music Appreciation III B examines the development of music from the Romantic period through the 1970s.…

High-temperature protective coatings for C/SiC composites

Directory of Open Access Journals (Sweden)

Xiang Yang

2014-12-01

Full Text Available Carbon fiber-reinforced silicon carbide (C/SiC composites were well-established light weight materials combining high specific strength and damage tolerance. For high-temperature applications, protective coatings had to provide oxidation and corrosion resistance. The literature data introduced various technologies and materials, which were suitable for the application of coatings. Coating procedures and conditions, materials design limitations related to the reactivity of the components of C/SiC composites, new approaches and coating systems to the selection of protective coatings materials were examined. The focus of future work was on optimization by further multilayer coating systems and the anti-oxidation ability of C/SiC composites at temperatures up to 2073 K or higher in water vapor.

High-velocity two-phase flow two-dimensional modeling

International Nuclear Information System (INIS)

Mathes, R.; Alemany, A.; Thilbault, J.P.

1995-01-01

The two-phase flow in the nozzle of a LMMHD (liquid metal magnetohydrodynamic) converter has been studied numerically and experimentally. A two-dimensional model for two-phase flow has been developed including the viscous terms (dragging and turbulence) and the interfacial mass, momentum and energy transfer between the phases. The numerical results were obtained by a finite volume method based on the SIMPLE algorithm. They have been verified by an experimental facility using air-water as a simulation pair and a phase Doppler particle analyzer for velocity and droplet size measurement. The numerical simulation of a lithium-cesium high-temperature pair showed that a nearly homogeneous and isothermal expansion of the two phases is possible with small pressure losses and high kinetic efficiencies. In the throat region a careful profiling is necessary to reduce the inertial effects on the liquid velocity field

Acoustic and streaming velocity components in a resonant waveguide at high acoustic levels.

Science.gov (United States)

Daru, Virginie; Reyt, Ida; Bailliet, Hélène; Weisman, Catherine; Baltean-Carlès, Diana

2017-01-01

Rayleigh streaming is a steady flow generated by the interaction between an acoustic wave and a solid wall, generally assumed to be second order in a Mach number expansion. Acoustic streaming is well known in the case of a stationary plane wave at low amplitude: it has a half-wavelength spatial periodicity and the maximum axial streaming velocity is a quadratic function of the acoustic velocity amplitude at antinode. For higher acoustic levels, additional streaming cells have been observed. Results of laser Doppler velocimetry measurements are here compared to direct numerical simulations. The evolution of axial and radial velocity components for both acoustic and streaming velocities is studied from low to high acoustic amplitudes. Two streaming flow regimes are pointed out, the axial streaming dependency on acoustics going from quadratic to linear. The evolution of streaming flow is different for outer cells and for inner cells. Also, the hypothesis of radial streaming velocity being of second order in a Mach number expansion, is not valid at high amplitudes. The change of regime occurs when the radial streaming velocity amplitude becomes larger than the radial acoustic velocity amplitude, high levels being therefore characterized by nonlinear interaction of the different velocity components.

New High-Performance SiC Fiber Developed for Ceramic Composites

Science.gov (United States)

DiCarlo, James A.; Yun, Hee Mann

2002-01-01

Sylramic-iBN fiber is a new type of small-diameter (10-mm) SiC fiber that was developed at the NASA Glenn Research Center and was recently given an R&D 100 Award for 2001. It is produced by subjecting commercially available Sylramic (Dow Corning, Midland, MI) SiC fibers, fabrics, or preforms to a specially designed high-temperature treatment in a controlled nitrogen environment for a specific time. It can be used in a variety of applications, but it currently has the greatest advantage as a reinforcement for SiC/SiC ceramic composites that are targeted for long-term structural applications at temperatures higher than the capability of metallic superalloys. The commercial Sylramic SiC fiber, which is the precursor for the Sylramic-iBN fiber, is produced by Dow Corning, Midland, Michigan. It is derived from polymers at low temperatures and then pyrolyzed and sintered at high temperatures using boron-containing sintering aids (ref. 1). The sintering process results in very strong fibers (>3 GPa) that are dense, oxygen-free, and nearly stoichiometric. They also display an optimum grain size that is beneficial for high tensile strength, good creep resistance, and good thermal conductivity (ref. 2). The NASA-developed treatment allows the excess boron in the bulk to diffuse to the fiber surface where it reacts with nitrogen to form an in situ boron nitride (BN) coating on the fiber surface (thus the product name of Sylramic-iBN fiber). The removal of boron from the fiber bulk allows the retention of high tensile strength while significantly improving creep resistance and electrical conductivity, and probably thermal conductivity since the grains are slightly larger and the grain boundaries cleaner (ref. 2). Also, as shown in the graph, these improvements allow the fiber to display the best rupture strength at high temperatures in air for any available SiC fiber. In addition, for CMC applications under oxidizing conditions, the formation of an in situ BN surface layer

Do Class III patients have a different growth spurt than the general population?

Science.gov (United States)

Lee, Yun-Sik; Lee, Shin-Jae; An, Hongseok; Donatelli, Richard E; Kim, Soo-Hwan

2012-11-01

Understanding the timing and length of the growth spurt of Class III prognathic patients is fundamental to the strategy of interceptive orthopedic orthodontics as well as to the timing of orthognathic surgery. Consequently, this study was undertaken to determine whether there are any significant differences in the stature growth pattern of Class III subjects compared with non-Class III subjects and the general population. Twelve-year longitudinal stature growth data were collected for 402 randomly selected adolescents in the general population, 55 Class III mandibular prognathic patients, and 37 non-Class III patients. The growth data were analyzed by using the traditional linear interpolation method and nonlinear growth functions. The 6 stature growth parameters were measured: age at takeoff, stature at takeoff, velocity at takeoff, age at peak height velocity, stature at peak height velocity, and velocity at peak height velocity. Comparisons in the stature growth parameters and 15 cephalometric variables among the general population, Class III subjects, and non-Class III subjects were made with multivariate analysis. Patients with Class III prognathism did not have different growth parameters compared with Class II subjects or the general population. This study does not allow meaningful conclusions with regard to the relationship of mandibular size and stature growth pattern. The application of nonlinear growth curves vs the traditional linear interpolation method was also discussed. Copyright © 2012 American Association of Orthodontists. Published by Mosby, Inc. All rights reserved.

A novel program to design siRNAs simultaneously effective to highly variable virus genomes.

Science.gov (United States)

Lee, Hui Sun; Ahn, Jeonghyun; Jun, Eun Jung; Yang, Sanghwa; Joo, Chul Hyun; Kim, Yoo Kyum; Lee, Heuiran

2009-07-10

A major concern of antiviral therapy using small interfering RNAs (siRNAs) targeting RNA viral genome is high sequence diversity and mutation rate due to genetic instability. To overcome this problem, it is indispensable to design siRNAs targeting highly conserved regions. We thus designed CAPSID (Convenient Application Program for siRNA Design), a novel bioinformatics program to identify siRNAs targeting highly conserved regions within RNA viral genomes. From a set of input RNAs of diverse sequences, CAPSID rapidly searches conserved patterns and suggests highly potent siRNA candidates in a hierarchical manner. To validate the usefulness of this novel program, we investigated the antiviral potency of universal siRNA for various Human enterovirus B (HEB) serotypes. Assessment of antiviral efficacy using Hela cells, clearly demonstrates that HEB-specific siRNAs exhibit protective effects against all HEBs examined. These findings strongly indicate that CAPSID can be applied to select universal antiviral siRNAs against highly divergent viral genomes.

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Kunert, B.; Guo, W.; Mols, Y.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K. [imec, Kapeldreef 75, 3001 Heverlee (Belgium); Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D. [Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 15, 9052 Gent (Belgium)

2016-08-29

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

Energy Technology Data Exchange (ETDEWEB)

Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Neumann, Richard; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

2010-07-15

GaN nanorods (NRs) show promising applications in high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In this work, we performed GaN nanostructures growth by pre-patterning the Si and AlN/Si substrates. The pattern was transferred to Si and AlN/Si substrates by photolithography and inductively-coupled plasma etching. GaN NRs were grown on these templates by metal-organic vapour phase epitaxy (MOVPE). GaN grown on Si pillar templates show a truncated pyramidal structure. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the GaN nanostructures and terminate. GaN growth can also be observed on the sidewalls and bottom surface between the Si pillars. A simple phenomenological model is proposed to explain the GaN nanostructure growth on Si pillar templates. Based on this model, we developed another growth method, by which we grow GaN rod structures on pre-patterned AlN/Si templates. By in-situ nitridation and decreasing of the V/III ratio, we found that GaN rods only grew on the patterned AlN/Si dots with an aspect ratio of about 1.5 - 2. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Deformations on Hole and Projectile Surfaces Caused By High Velocity Friction During Ballistic Impact

Science.gov (United States)

Karamış, M. B.

2018-01-01

In this study, the deformations caused by the ballistic impact on the MM composites and on projectile surfaces are examined. The hole section and grain deformation of unreinforced targets are also examined after impact. The relatively high complexity of impact problems is caused by the large number of intervening parameters like relative velocity of projectile and target, shape of colliding objects, relative stiffness and masses, time-dependent surface of contact, geometry and boundary conditions and material characteristics. The material used in this investigation are 2024 and 7075 aluminum alloys as matrix reinforced with SiC and Al2O3 particles. The matrix materials are extensively used in defense applications due to its favorable ballistic properties, moderate strength, high corrosion resistance and super plastic potential. Two different composites were produced; one by casting and the other by lamination. The ballistic tests of the composite targets were carried out according to NIJ Standard-0101.04, Temperature 21 °C, RH=65% with 7.62 mm projectiles. The bullet weight was 9.6 g and their muzzle velocities were in the range of 770-800 m/s. The projectiles consisted of a steel core, copper jacket and lead material. The composite targets were positioned 15 m from the rifle. The interaction between projectiles and the target hole created after impact were examined by light microscopy and photography. Different damage and failure mechanisms such as petalling, cracking, spalling, dishing, etc., were observed on the target body. On the other hand, dramatic wear and damages on the projectile surface were also observed. The targets were supported with Al-5083 backing blocks having 40 mm thickness.

High velocity electromagnetic particle launcher for aerosol production studies

International Nuclear Information System (INIS)

Benson, D.A.; Rader, D.J.

1986-05-01

This report describes the development of a new device for study of metal combustion, breakup and production of aerosols in a high velocity environment. Metal wires are heated and electromagnetically launched with this device to produce molten metal droplets moving at velocities ranging up to about Mach 1. Such tests are presently intended to simulate the behavior of metal streamers ejected from a high-explosive detonation. A numerical model of the launcher performance in terms of sample properties, sample geometry and pulser electrical parameters is presented which can be used as a tool for design of specific test conditions. Results from several tests showing the range of sample velocities accessible with this device are described and compared with the model. Photographic measurements showing the behavior of tungsten and zirconium metal droplets are presented. Estimates of the Weber breakup and drag on the droplets, as well as calculations of the droplet trajectories, are described. Such studies may ultimately be useful in assessing environmental hazards in the handling and storage of devices containing metallic plutonium

Ion Spin-Up, Temperature, and Flow Measurements in the TCSU Experiment

Science.gov (United States)

Deards, C. L.; Grossnickle, J. A.; Steinhauer, L. C.; Melnik, P. A.; Milroy, R. D.

2009-11-01

The Translation, Confinement, and Sustainment Upgrade (TCSU) experiment employs a bakeable ultra-high vacuum chamber to reduce impurities and overall recycling. In recent experiments with Ti gettering applied to the plasma tube, radiation from impurities was dramatically reduced and recycling was almost eliminated. Ion temperature and azimuthal rotation velocities data from the resulting lower density, higher temperature FRC will be presented. The data comes from Doppler-broadening and Doppler-shifted measurements of Si III, C III, and O III, the dominant impurities in the TCSU plasma. Additionally, plans and initial data will be presented on azimuthal and poloidal velocity shear. Velocity shear is thought to improve stability and transport. All data measurements are made using an Acton Research SpectraPro 500i Czerny-Turney type spectrograph.

Resonant tunneling with high peak to valley current ratio in SiO2/nc-Si/SiO2 multi-layers at room temperature

International Nuclear Information System (INIS)

Chen, D. Y.; Sun, Y.; He, Y. J.; Xu, L.; Xu, J.

2014-01-01

We have investigated carrier transport in SiO 2 /nc-Si/SiO 2 multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V 2 ) as a function of 1/V and ln(I) as a function of V 1/2 . Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages

Elastic Wave Velocity Measurements on Mantle Peridotite at High Pressure and Temperature

Science.gov (United States)

Mistler, G. W.; Ishikawa, M.; Li, B.

2002-12-01

With the success of conducting ultrasonic measurements at high pressure and high temperature in large volume high pressure apparatus with in-situ measurement of the sample length by X-ray imaging, it is now possible to measure elastic wave velocities on aggregate samples with candidate compositions of the mantle to the conditions of the Earth's transition zone in the laboratory. These data can be directly compared with seismic data to distinguish the compositional models in debate. In this work, we carried out velocity measurements on natural peridotite KLB-1 at the conditions of the Earth's upper mantle. Fine powered sample of natural KLB-1 was used as starting material. Specimens for ultrasonic measurements were hot-pressed and equilibrated at various pressure and temperature conditions along geotherm up to the transition zone. The recovered samples were characterized with density measurement, X-ray diffraction and microprobe analysis. Bench top P and S wave velocities of KLB-1 sample sintered at 3-4 GPa and 1400 degree centigrade showed a very good agreement with the VRH average of pyrolite. High pressure and high temperature measurements was conducted up to 7 GPa and 800 degree centigrade using ultrasonic interferometric method in a DIA-type high pressure apparatus in conjunction with X-ray diffraction and X-ray imaging. The utilization of X-ray imaging technique provides direct measurements of sample lengths at high pressure and high temperature, ensuring a precise determination of velocities. The results of P and S wave velocities at high pressure and high temperature as well as their comparison with calculated pyrolite model will be presented.

Minimum pickup velocity (U{sub pu}) of nanoparticles in gas–solid pneumatic conveying

Energy Technology Data Exchange (ETDEWEB)

Anantharaman, Aditya [Nanyang Technological University, School of Chemical and Biomedical Engineering (Singapore); Ommen, J. Ruud van [Delft University of Technology, Department of Chemical Engineering (Netherlands); Chew, Jia Wei, E-mail: JChew@ntu.edu.sg [Nanyang Technological University, School of Chemical and Biomedical Engineering (Singapore)

2015-12-15

This paper is the first systematic study of the pneumatic conveying of nanoparticles. The minimum pickup velocity, U{sub pu}, of six nanoparticle species of different materials [i.e., silicon dioxide (SiO{sub 2}), aluminum oxide (Al{sub 2}O{sub 3}), and titanium dioxide (TiO{sub 2})] and surfaces (i.e., apolar and polar) was determined by the weight loss method. Results show that (1) due to relative lack of hydrogen bonding, apolar nanoparticles had higher mass loss values at the same velocities, mass loss curves with accentuated S-shaped profiles, and lower U{sub pu} values, (2) among the three species, SiO{sub 2}, which has the lowest Hamaker coefficient, exhibited the greatest discrepancy between apolar and polar surfaces with respect to both mass loss curves and U{sub pu} values, (3) U{sub mf,polar}/U{sub mf,apolar} was between 1 and 3.5 times that of U{sub pu,polar}/U{sub pu,apolar} due to greater extents of hydrogen bonding associated with U{sub mf}, (4) U{sub pu} values were at least an order-of-magnitude lower than that expected from the well-acknowledged U{sub pu} correlation (Kalman et al., Powder Technol 160:103–113, 2005) due to agglomeration, (5) although nanoparticles should be categorized as Zone III (Kalman et al. 2005) (or Geldart group C, Powder Technol 7:285–292, 1973), the nanoparticles, and primary and complex agglomerates agreed more with the Zone I (or Geldart group B) correlation.

Revision of the Li13Si4 structure

Directory of Open Access Journals (Sweden)

Thomas F. Fässler

2013-12-01

Full Text Available Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li–Si system is the phase Li13Si4 (tridecalithium tetrasilicide, the structure of which has been determined previously [Frank et al. (1975. Z. Naturforsch. Teil B, 30, 10–13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i the introduction of a split position for one Li site [occupancy ratio 0.838 (7:0.162 (7], (ii the anisotropic refinement of atomic displacement parameters for all atoms, and (iii a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si–Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si–Si dumbbells at z = 0.5.

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Science.gov (United States)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, N-polar GaN films with different V/III ratios were grown on vicinal C-face SiC substrates by metalorganic chemical vapor deposition. During the growth of N-polar GaN film, the V/III ratio was controlled by adjusting the molar flow rate of ammonia while keeping the trimethylgallium flow rate unchanged. The influence of the V/III ratio on the surface morphology of N-polar GaN film has been studied. We find that the surface root mean square roughness of N-polar GaN film over an area of 20 × 20 μm2 can be reduced from 8.13 to 2.78 nm by optimization of the V/III ratio. Then, using the same growth conditions, N-polar InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on the rough and the smooth N-polar GaN templates, respectively. Compared with the LED grown on the rough N-polar GaN template, dramatically improved interface sharpness and luminescence uniformity of the InGaN/GaN MQWs are achieved for the LED grown on the smooth N-polar GaN template.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

International Nuclear Information System (INIS)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-01-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

Science.gov (United States)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-09-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Vitreous Anorthite (CaAl2Si2O8) at High Pressure: A First-Principles Molecular Dynamics Study

Science.gov (United States)

Ghosh, D. B.; Karki, B. B.

2017-12-01

Due to the high abundance of silicates and aluminosilicates inside the earth, their corresponding melts are likely to be one of the key transport agents in the chemical and thermal evolution of our planet and therefore, have long been the subject of investigations. Experimentally, in-situ melt properties of these materials, particularly at high pressure-temperature conditions are extremely difficult to constrain and the corresponding glass phases are considered as analogs. This, however, prohibits one-to-one comparison between the properties of silicate melt and its corresponding glass. With the aim to enable such comparison, we investigate the equation of state and structural properties of CaAl2Si2O8 glass at 300 K as a function of pressure up to 160 GPa from first principles molecular dynamics simulation results. Our results show that at ambient pressure: (i) Si's remain mostly (> 95%) under tetrahedral oxygen surroundings, (ii) unlike anorthite crystal, presence of high coordination (> 4) Al's with 30% abundance, (iii) and significant presence of both non bridging (8%) and triply (17%) coordinated oxygen. In the 0-10 GPa interval, mainly topological changes occur in the Si-O (also Al-O to some extent) surroundings in the cold compressed case in comparison to smooth increase in the average bond distance and coordination in the hot compressed case. Further compression results in gradual increases in: mean coordination, proportion of O-triclusters and increasing appearance of tetrahedral oxgyens, with Si-O (Al-O) reaching 6 (6.5) and O-T > 3 (T=Si and Al) at the highest compression. Due to the absence of kinetic barrier, the hot compressed glasses consistently produce greater densities and higher coordination numbers than the cold compression cases. Decompressed glasses show irreversible compaction along with retention of high coordination species when decompressed from > 10 GPa and degree of irreversibility depends on the peak pressure of decompression. These

POPULATION III STARS AND REMNANTS IN HIGH-REDSHIFT GALAXIES

International Nuclear Information System (INIS)

Xu Hao; Norman, Michael L.; Wise, John H.

2013-01-01

Recent simulations of Population III star formation have suggested that some fraction form in binary systems, in addition to having a characteristic mass of tens of solar masses. The deaths of metal-free stars result in the initial chemical enrichment of the universe and the production of the first stellar-mass black holes. Here we present a cosmological adaptive mesh refinement simulation of an overdense region that forms a few 10 9 M ☉ dark matter halos and over 13,000 Population III stars by redshift 15. We find that most halos do not form Population III stars until they reach M vir ∼ 10 7 M ☉ because this biased region is quickly enriched from both Population III and galaxies, which also produce high levels of ultraviolet radiation that suppress H 2 formation. Nevertheless, Population III stars continue to form, albeit in more massive halos, at a rate of ∼10 –4 M ☉ yr –1 Mpc –3 at redshift 15. The most massive starless halo has a mass of 7 × 10 7 M ☉ , which could host massive black hole formation through the direct gaseous collapse scenario. We show that the multiplicity of the Population III remnants grows with halo mass above 10 8 M ☉ , culminating in 50 remnants located in 10 9 M ☉ halos on average. This has implications that high-mass X-ray binaries and intermediate-mass black holes that originate from metal-free stars may be abundant in high-redshift galaxies

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

Science.gov (United States)

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

Si-BEARING MOLECULES TOWARD IRC+10216: ALMA UNVEILS THE MOLECULAR ENVELOPE OF CWLeo

International Nuclear Information System (INIS)

Prieto, L. Velilla; Cernicharo, J.; Quintana-Lacaci, G.; Agúndez, M.; Castro-Carrizo, A.; Guélin, M.; Fonfría, J. P.; Marcelino, N.; Zúñiga, J.; Requena, A.; Bastida, A.; Lique, F.

2015-01-01

We report the detection of SiS rotational lines in high-vibrational states as well as SiO and SiC 2 lines in their ground vibrational state toward IRC+10216 during the Atacama Large Millimeter Array Cycle 0. The spatial distribution of these molecules shows compact emission for SiS and a more extended emission for SiO and SiC 2 and also proves the existence of an increase in the SiC 2 emission at the outer shells of the circumstellar envelope (CSE). We analyze the excitation conditions of the vibrationally excited SiS using the population diagram technique, and we use a large velocity gradient model to compare with the observations. We found moderate discrepancies between the observations and the models that could be explained if SiS lines detected are optically thick. Additionally, the line profiles of the detected rotational lines in the high-energy vibrational states show a decreasing linewidth with increasing energy levels. This may be evidence that these lines could be excited only in the inner shells, i.e., the densest and hottest, of the CSE of IRC+10216

The influence of slip velocity and temperature on permeability during and after high-velocity fault slip

Science.gov (United States)

Tanikawa, W.; Mukoyoshi, H.; Tadai, O.; Hirose, T.; Lin, W.

2011-12-01

Fluid transport properties in fault zones play an important role in dynamic processes during large earthquakes. If the permeability in a fault zone is low, high pore-fluid pressures caused by thermal pressurization (Sibson, 1973) or shear-induced compaction (Blanpied et al., 1992) can lead to an apparent reduction of fault strength. Changes in porosity and permeability of fault rocks within a fault zone during earthquakes and the subsequent progressive recovery of these properties may have a large influence on earthquake recurrence (Sleep and Blanpied, 1992). A rotary shear apparatus was used to investigate changes of fluid transport properties in a fault zone by real-time measurement of gas flow rates during and after shearing of hollow sandstone and granite cylinders at various slip rates. Our apparatus measures permeability parallel to the slip plane in both the slip zone and wall rocks. In all cases, permeability decreased rapidly with an increase of friction, but recovered soon after slip, reaching a steady state within several tens of minutes. The rate of reduction of permeability increased with increasing slip velocity. Permeability did not recover to pre-slip levels after low-velocity tests but recovered to exceed them after high-velocity tests. Frictional heating of gases at the slip surface increased gas viscosity, which increased gas flow rate to produce an apparent permeability increase. The irreversible permeability changes of the low-velocity tests were caused by gouge formation due to wearing and smoothing of the slip surface. The increase of permeability after high-velocity tests was caused by mesoscale fracturing in response to rapid temperature rise. Changes of pore fluid viscosity contributed more to changes of flow rate than did permeability changes caused by shear deformation, although test results from different rocks and pore fluids might be different. References Blanpied, M.L., Lockner, D.A., Byerlee, J.D., 1992. An earthquake mechanism

IIIST1\\NTI-i\\III.

African Journals Online (AJOL)

guests in September 1914. (1) Major-General Sir Lothian Nicholson. KCB, CMG, and Major H 1. MacMullen, MC, History of the East Lancashire Regiment in the Great. War 1914-1918, Littlebury. Bros, Ltd. Liverpool,. 1936. p 114. Ti\\.~TI(~S-1\\ IIIST ••III. ~SI Til VI~V. I..•f :01 i\\. f~•• 10III.SOIl ~IIII~ 1~lt. The study of military tactics ...

GaN transistors on Si for switching and high-frequency applications

Science.gov (United States)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

Development of high performance readout ASICs for silicon photomultipliers (SiPMs)

International Nuclear Information System (INIS)

Shen, Wei

2012-01-01

Silicon Photomultipliers (SiPMs) are novel kind of solid state photon detectors with extremely high photon detection resolution. They are composed of hundreds or thousands of avalanche photon diode pixels connected in parallel. These avalanche photon diodes are operated in Geiger Mode. SiPMs have the same magnitude of multiplication gain compared to the conventional photomultipliers (PMTs). Moreover, they have a lot of advantages such as compactness, relatively low bias voltage and magnetic field immunity etc. Special readout electronics are required to preserve the high performance of the detector. KLauS and STiC are two CMOS ASIC chips designed in particular for SiPMs. KLauS is used for SiPM charge readout applications. Since SiPMs have a much larger detector capacitance compared to other solid state photon detectors such as PIN diodes and APDs, a few special techniques are used inside the chip to make sure a descent signal to noise ratio for pixel charge signal can be obtained. STiC is a chip dedicated to SiPM time-of-flight applications. High bandwidth and low jitter design schemes are mandatory for such applications where time jitter less than tens of picoseconds is required. Design schemes and error analysis as well as measurement results are presented in the thesis.

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

2016-02-10

Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial

The efficiency of ceramic-faced metal targets at high-velocity impact

Science.gov (United States)

Tolkachev, V. F.; Konyaev, A. A.; Pakhnutova, N. V.

2017-11-01

The paper represents experimental results and engineering evaluation concerning the efficiency of composite materials to be used as an additional protection during the high- velocity interaction of a tungsten rod with a target in the velocity range of 1...5 km/s. The main parameter that characterizes the high-velocity interaction of a projectile with a layered target is the penetration depth. Experimental data, numerical simulation and engineering evaluation by modified models are used to determine the penetration depth. Boron carbide, aluminum oxide, and aluminum nickelide are applied as a front surface of targets. Based on experimental data and numerical simulation, the main characteristics of ceramics are determined, which allows composite materials to be effectively used as additional elements of protection.

Effects of Port Shape on Steady Flow Characteristics in an SI Engine with Semi-Wedge Combustion Chamber (2) - Velocity Distribution (2)

Energy Technology Data Exchange (ETDEWEB)

Yoon, Inkyoung; Ohm, Inyong [Seoul Nat’l Univ. of Science and Technology, Seoul (Korea, Republic of)

2017-02-15

This study is the second investigation on the steady flow characteristics of an SI engine with a semi-edge combustion chamber as a function of the port shape with varying evaluation positions. For this purpose, the planar velocity profiles were measured from 1.75B, 1.75 times of bore position apart from the bottom of head, to 6.00B positions using particle – image velocimetry. The flow patterns were examined with both a straight and a helical port. The velocity profiles, streamlines, and centers of swirl were almost the same at the same valve lift regardless of the measuring position, which is quite different from the case of the pent-roof combustion chamber. All the eccentricity values of the straight port were out of distortion criterion 0.15 through the lifts and the position. However, the values of the helical port exceeded the distortion criterion by up to 4 mm lift, but decreased rapidly above the 3.00B position and the 5 mm lift. There always existed a relative offset effect in the evaluation of the swirl coefficient using the PIV method due to the difference of the ideal impulse swirl meter velocity profile assumption, except for the cylinder-center-base estimation that was below 4 mm of the straight port. Finally, it was concluded that taking the center as an evaluation basis and the assumption about the axial velocity profile did not have any qualitative effect on swirl evaluation, but affected the value owing to the detailed profile.

High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

International Nuclear Information System (INIS)

Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime

2007-01-01

A high electron density (> 10 11 cm -3 ) and low electron temperature (1-2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of ∼ 65 A/s is achieved at a substrate temperature of 150 deg. C with a high Raman crystallinity and a low defect density of (1-2) x 10 16 cm -3 . Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of H α /SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity

Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis.

Science.gov (United States)

Tice, Jesse B; Chizmeshya, A V G; Tolle, J; D' Costa, V R; Menendez, J; Kouvetakis, J

2010-05-21

The (SiH₃)₃P hydride is introduced as a practical source for n-doping of group IV semiconductors and as a highly-reactive delivery agent of -(SiH₃)₂P functionalities in exploratory synthesis. In contrast to earlier methods, the compound is produced here in high purity quantitative yields via a new single-step method based on reactions of SiH₃Br and (Me₃Sn)₃P, circumventing the need for toxic and unstable starting materials. As an initial demonstration of its utility we synthesized monosubstituted Me₂M-P(SiH₃)₂ (M = Al, Ga, In) derivatives of Me₃M containing the (SiH₃)₂P ligand for the first time, in analogy to the known Me₂M-P(SiMe₃)₂ counterparts. A dimeric structure of Me₂M-P(SiH₃)₂ is proposed on the basis of spectroscopic characterizations and quantum chemical simulations. Next, in the context of materials synthesis, the (SiH₃)₃P compound was used to dope germanium for the first time by building a prototype p(++)Si(100)/i-Ge/n-Ge photodiode structure. The resultant n-type Ge layers contained active carrier concentrations of 3-4 × 10¹⁹ atoms cm⁻³ as determined by spectroscopic ellipsometry and confirmed by SIMS. Strain analysis using high resolution XRD yielded a Si content of 4 × 10²⁰ atoms cm⁻³ in agreement with SIMS and within the range expected for incorporating Si₃P type units into the diamond cubic Ge matrix. Extensive characterizations for structure, morphology and crystallinity indicate that the Si co-dopant plays essentially a passive role and does not compromise the device quality of the host material nor does it fundamentally alter its optical properties.

Yb2Si2O7 Environmental Barrier Coatings Deposited by Various Thermal Spray Techniques: A Preliminary Comparative Study

Science.gov (United States)

Bakan, Emine; Marcano, Diana; Zhou, Dapeng; Sohn, Yoo Jung; Mauer, Georg; Vaßen, Robert

2017-08-01

Dense, crack-free, uniform, and well-adhered environmental barrier coatings (EBCs) are required to enhance the environmental durability of silicon (Si)-based ceramic matrix composites in high pressure, high gas velocity combustion atmospheres. This paper represents an assessment of different thermal spray techniques for the deposition of Yb2Si2O7 EBCs. The Yb2Si2O7 coatings were deposited by means of atmospheric plasma spraying (APS), high-velocity oxygen fuel spraying (HVOF), suspension plasma spraying (SPS), and very low-pressure plasma spraying (VLPPS) techniques. The initial feedstock, as well as the deposited coatings, were characterized and compared in terms of their phase composition. The as-sprayed amorphous content, microstructure, and porosity of the coatings were further analyzed. Based on this preliminary investigation, the HVOF process stood out from the other techniques as it enabled the production of vertical crack-free coatings with higher crystallinity in comparison with the APS and SPS techniques in atmospheric conditions. Nevertheless, VLPPS was found to be the preferred process for the deposition of Yb2Si2O7 coatings with desired characteristics in a controlled-atmosphere chamber.

The antifibrotic effects of TGF-β1 siRNA on hepatic fibrosis in rats

International Nuclear Information System (INIS)

Lang, Qing; Liu, Qi; Xu, Ning; Qian, Ke-Li; Qi, Jing-Hu; Sun, Yin-Chun; Xiao, Lang; Shi, Xiao-Feng

2011-01-01

Highlights: → We constructed CCL4 induced liver fibrosis model successfully. → We proofed that the TGF-β1 siRNA had a definite therapy effect to CCL4 induced liver fibrosis. → The therapy effect of TGF-β1 siRNA had dose-dependent. -- Abstract: Background/aims: Hepatic fibrosis results from the excessive secretion of matrix proteins by hepatic stellate cells (HSCs), which proliferate during fibrotic liver injury. Transforming growth factor (TGF)-β1 is the dominant stimulus for extracellular matrix (ECM) production by stellate cells. Our study was designed to investigate the antifibrotic effects of using short interference RNA (siRNA) to target TGF-β1 in hepatic fibrosis and its mechanism in rats exposed to a high-fat diet and carbon tetrachloride (CCL4). Methods: A total of 40 healthy, male SD (Sprague-Dawley) rats were randomly divided into five even groups containing of eight rats each: normal group, model group, TGF-β1 siRNA 0.125 mg/kg treatment group, TGF-β1 siRNA 0.25 mg/kg treatment group and TGF-β1 siRNA negative control group (0.25 mg/kg). CCL4 and a high-fat diet were used for 8 weeks to induce hepatic fibrosis. All the rats were then sacrificed to collect liver tissue samples. A portion of the liver samples were soaked in formalin for Hematoxylin-Eosin staining, classifying the degree of liver fibrosis, and detecting the expression of type I and III collagen and TGF-β1; the remaining liver samples were stored in liquid nitrogen to be used for detecting TGF-β1 by Western blotting and for measuring the mRNA expression of type I and III collagen and TGF-β1 by quantitative real-time polymerase chain reaction. Results: Comparing the TGF-β1 siRNA 0.25 mg/kg treatment group to the model group, the TGF-β1 siRNA negative control group and the TGF-β1 siRNA 0.125 mg/kg treatment group showed significantly reduced levels of pathological changes, protein expression and the mRNA expression of TGF-β1, type I collagen and type III collagen (P < 0

The antifibrotic effects of TGF-{beta}1 siRNA on hepatic fibrosis in rats

Energy Technology Data Exchange (ETDEWEB)

Lang, Qing; Liu, Qi [Key Laboratory of Molecular Biology for Infectious Diseases, Ministry of Education, Instituted for Virus Hepatitis and Department of Infectious Diseases, The Second Affiliated Hospital, Chongqing Medical University, Chongqing (China); Xu, Ning [The Second Hospital of YuLin, Shanxi Province (China); Qian, Ke-Li; Qi, Jing-Hu; Sun, Yin-Chun; Xiao, Lang [Key Laboratory of Molecular Biology for Infectious Diseases, Ministry of Education, Instituted for Virus Hepatitis and Department of Infectious Diseases, The Second Affiliated Hospital, Chongqing Medical University, Chongqing (China); Shi, Xiao-Feng, E-mail: sxff2003@yahoo.com.cn [Key Laboratory of Molecular Biology for Infectious Diseases, Ministry of Education, Instituted for Virus Hepatitis and Department of Infectious Diseases, The Second Affiliated Hospital, Chongqing Medical University, Chongqing (China)

2011-06-10

Highlights: {yields} We constructed CCL4 induced liver fibrosis model successfully. {yields} We proofed that the TGF-{beta}1 siRNA had a definite therapy effect to CCL4 induced liver fibrosis. {yields} The therapy effect of TGF-{beta}1 siRNA had dose-dependent. -- Abstract: Background/aims: Hepatic fibrosis results from the excessive secretion of matrix proteins by hepatic stellate cells (HSCs), which proliferate during fibrotic liver injury. Transforming growth factor (TGF)-{beta}1 is the dominant stimulus for extracellular matrix (ECM) production by stellate cells. Our study was designed to investigate the antifibrotic effects of using short interference RNA (siRNA) to target TGF-{beta}1 in hepatic fibrosis and its mechanism in rats exposed to a high-fat diet and carbon tetrachloride (CCL4). Methods: A total of 40 healthy, male SD (Sprague-Dawley) rats were randomly divided into five even groups containing of eight rats each: normal group, model group, TGF-{beta}1 siRNA 0.125 mg/kg treatment group, TGF-{beta}1 siRNA 0.25 mg/kg treatment group and TGF-{beta}1 siRNA negative control group (0.25 mg/kg). CCL4 and a high-fat diet were used for 8 weeks to induce hepatic fibrosis. All the rats were then sacrificed to collect liver tissue samples. A portion of the liver samples were soaked in formalin for Hematoxylin-Eosin staining, classifying the degree of liver fibrosis, and detecting the expression of type I and III collagen and TGF-{beta}1; the remaining liver samples were stored in liquid nitrogen to be used for detecting TGF-{beta}1 by Western blotting and for measuring the mRNA expression of type I and III collagen and TGF-{beta}1 by quantitative real-time polymerase chain reaction. Results: Comparing the TGF-{beta}1 siRNA 0.25 mg/kg treatment group to the model group, the TGF-{beta}1 siRNA negative control group and the TGF-{beta}1 siRNA 0.125 mg/kg treatment group showed significantly reduced levels of pathological changes, protein expression and the m

Elastic wave velocities of iron-bearing Ringwoodite (Mg0.8Fe0.2)2SiO2 to 12GPa at room temperature

Science.gov (United States)

Higo, Y.; Li, B.; Inoue, T.; Irifune, T.; Libermann, R. C.

2002-12-01

At present, it is widely accepted that olivine is the most important mineral in the Earth's upper mantle. The elastic property changes associated with the phase transformations to its high-pressure polymorphs are very important parameters to constrain the composition of the mantle transition zone. In this study, we measured the elastic wave velocity of iron-bearing Ringwoodite (Mg0.8Fe0.2)2SiO4. The specimen was hot-pressed at 18GPa and 1273K in a 2000-ton Uniaxial Split Sphere Apparatus (ORANGE-2000: GRC at ehime university). The recovered polycrystalline specimen was characterized by x-ray diffraction, EPMA, ultrasonic techniques, and the density was determined by Archimedes' method, and found to be single-phase and fine-grained. Bench top measurements of the compressional and shear wave velocities yielded Vp=9.10 km/s and Vs=5.52 km/s. High-pressure ultrasonic measurement was carried out in a 1000-ton Uniaxial Split-Cylinder Apparatus (USCA-1000: SUNY) at pressures up to 12GPa at room temperature using ZnTe as internal pressure marker. The sample was surrounded by lead to minimize the deviatoric stress. Also in this experiment, the travel times of the Al2O3 buffer rod were used for pressure calculation. The travel times of the buffer rod under the same cell geometry have been calibrated as a function of sample pressure by the thermal equation of state of NaCl using in-situ X-ray diffraction techniques. The results of our high-pressure experiment, including the elastic moduli and their pressure dependence, effect of iron on the elastic moduli, as well as their implication for the mantle transition zone, will be presented.

Distances, metallicities and origins of high-velocity clouds

NARCIS (Netherlands)

van Woerden, H; Wakker, BP; Peletier, RF; Schwarz, UJ; KraanKorteweg, RC; Henning, PA; Andernach, H

2000-01-01

A review is given of distances of high-velocity clouds (HVCs) derived from absorption-line measurements, and of the metallicities of HVCs. Chain A definitely lies in the Galactic halo, between 2.5 and 7 kpc above the plane. The distance limits available for other HVCs allow a variety of locations:

Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

International Nuclear Information System (INIS)

Hai-Qing, Xiao; Chun-Lan, Zhou; Xiao-Ning, Cao; Wen-Jing, Wang; Lei, Zhao; Hai-Ling, Li; Hong-Wei, Diao

2009-01-01

Al 2 O 3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 10 12 cm −2 is detected in the Al 2 O 3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO 2 and plasma enhanced chemical vapor deposition SiN x :H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al 2 O 3 . (cross-disciplinary physics and related areas of science and technology)

Computer Aided Multi-scale Design of SiC-Si3N4 Nanoceramic Composites for High-Temperature Structural Applications

Energy Technology Data Exchange (ETDEWEB)

Vikas Tomer; John Renaud

2010-08-31

It is estimated that by using better and improved high temperature structural materials, the power generation efficiency of the power plants can be increased by 15% resulting in significant cost savings. One such promising material system for future high-temperature structural applications in power plants is Silicon Carbide-Silicon Nitride (SiC-Si{sub 3}N{sub 4}) nanoceramic matrix composites. The described research work focuses on multiscale simulation-based design of these SiC-Si{sub 3}N{sub 4} nanoceramic matrix composites. There were two primary objectives of the research: (1) Development of a multiscale simulation tool and corresponding multiscale analyses of the high-temperature creep and fracture resistance properties of the SiC-Si{sub 3}N{sub 4} nanocomposites at nano-, meso- and continuum length- and timescales; and (2) Development of a simulation-based robust design optimization methodology for application to the multiscale simulations to predict the range of the most suitable phase morphologies for the desired high-temperature properties of the SiC-Si{sub 3}N{sub 4} nanocomposites. The multiscale simulation tool is based on a combination of molecular dynamics (MD), cohesive finite element method (CFEM), and continuum level modeling for characterizing time-dependent material deformation behavior. The material simulation tool is incorporated in a variable fidelity model management based design optimization framework. Material modeling includes development of an experimental verification framework. Using material models based on multiscaling, it was found using molecular simulations that clustering of the SiC particles near Si{sub 3}N{sub 4} grain boundaries leads to significant nanocomposite strengthening and significant rise in fracture resistance. It was found that a control of grain boundary thicknesses by dispersing non-stoichiometric carbide or nitride phases can lead to reduction in strength however significant rise in fracture strength. The

A remorin gene SiREM6, the target gene of SiARDP, from foxtail millet (Setaria italica) promotes high salt tolerance in transgenic Arabidopsis.

Science.gov (United States)

Yue, Jing; Li, Cong; Liu, Yuwei; Yu, Jingjuan

2014-01-01

Remorin proteins (REMs) form a plant-specific protein family, with some REMs being responsive to abiotic stress. However, the precise functions of REMs in abiotic stress tolerance are not clear. In this study, we identified 11 remorin genes from foxtail millet (Setaria italica) and cloned a remorin gene, SiREM6, for further investigation. The transcript level of SiREM6 was increased by high salt stress, low temperature stress and abscisic acid (ABA) treatment, but not by drought stress. The potential oligomerization of SiREM6 was examined by negative staining electron microscopy. The overexpression of SiREM6 improved high salt stress tolerance in transgenic Arabidopsis at the germination and seedling stages as revealed by germination rate, survival rate, relative electrolyte leakage and proline content. The SiREM6 promoter contains two dehydration responsive elements (DRE) and one ABA responsive element (ABRE). An ABA responsive DRE-binding transcription factor, SiARDP, and an ABRE-binding transcription factor, SiAREB1, were cloned from foxtail millet. SiARDP could physically bind to the DREs, but SiAREB1 could not. These results revealed that SiREM6 is a target gene of SiARDP and plays a critical role in high salt stress tolerance.

A remorin gene SiREM6, the target gene of SiARDP, from foxtail millet (Setaria italica promotes high salt tolerance in transgenic Arabidopsis.

Directory of Open Access Journals (Sweden)

Jing Yue

Full Text Available Remorin proteins (REMs form a plant-specific protein family, with some REMs being responsive to abiotic stress. However, the precise functions of REMs in abiotic stress tolerance are not clear. In this study, we identified 11 remorin genes from foxtail millet (Setaria italica and cloned a remorin gene, SiREM6, for further investigation. The transcript level of SiREM6 was increased by high salt stress, low temperature stress and abscisic acid (ABA treatment, but not by drought stress. The potential oligomerization of SiREM6 was examined by negative staining electron microscopy. The overexpression of SiREM6 improved high salt stress tolerance in transgenic Arabidopsis at the germination and seedling stages as revealed by germination rate, survival rate, relative electrolyte leakage and proline content. The SiREM6 promoter contains two dehydration responsive elements (DRE and one ABA responsive element (ABRE. An ABA responsive DRE-binding transcription factor, SiARDP, and an ABRE-binding transcription factor, SiAREB1, were cloned from foxtail millet. SiARDP could physically bind to the DREs, but SiAREB1 could not. These results revealed that SiREM6 is a target gene of SiARDP and plays a critical role in high salt stress tolerance.

“Direct modulation of a hybrid III-V/Si DFB laser with MRR filtering for 22.5-Gb/s error-free dispersion-uncompensated transmission over 2.5-km SSMF

DEFF Research Database (Denmark)

Cristofori, Valentina; Da Ros, Francesco; Ding, Yunhong

2016-01-01

Error-free and penalty-free transmission over 2.5 km SSMF of a 22.5 Gb/s data signal from a directly modulated hybrid III-V/Si DFB laser is achieved by enhancing the dispersion tolerance using a silicon micro-ring resonator....

High resolution investigation of the 30Si(þ, þ)30Si reaction

NARCIS (Netherlands)

Walinga, J.; Rinsvelt, H.A. van; Endt, P.M.

The differential cross section for elastic scattering of protons on 30Si was measured with surface barrier counters at four angles. Thirty-six 30Si(þ, γ)31P resonances are known in the Ep=1–2MeV region. Fifteen of these were also observed in the 30Si(þ, þ)30Si reaction, with natural widths varying

High-Temperature Photovoltaic Effect in La.Ca.MnO/SiO/Si Heterojunction

Directory of Open Access Journals (Sweden)

Hao Ni

2012-01-01

Full Text Available We fabricated a heterojunction of La0.4Ca0.6MnO3/SiO/n-Si and investigated its electronic transport and ultraviolet photovoltaic properties at higher temperature up to 673 K. The rectifying behaviors vanished with the energy-band structure evolvement from 300 to 673 K. Under irradiation of a 248 nm pulse laser, the peak values of open-circuit photovoltage and short-circuit photocurrent decreased drastically. This understanding of the temperature-related current-voltage behavior and ultraviolet photodetection of oxide heterostructures should open a route for devising future microelectronic devices working at high temperature. PACS: 73.40.Lq, 71.27.+ a, 73.50.Pz.

High efficiency three-phase power factor correction rectifier using SiC switches

DEFF Research Database (Denmark)

Kouchaki, Alireza; Nymand, Morten

2017-01-01

This paper presents designing procedure of a high efficiency 5 kW silicon-carbide (SiC) based threephase power factor correction (PFC). SiC switches present low capacitive switching loss compared to the alternative Si switches. Therefore, the switching frequency can be increased and hence the siz...

Microstructure and high-temperature tribological properties of Si-doped hydrogenated diamond-like carbon films

Science.gov (United States)

Zhang, Teng Fei; Wan, Zhi Xin; Ding, Ji Cheng; Zhang, Shihong; Wang, Qi Min; Kim, Kwang Ho

2018-03-01

Si-doped DLC films have attracted great attention for use in tribological applications. However, their high-temperature tribological properties remain less investigated, especially in harsh oxidative working conditions. In this study, Si-doped hydrogenated DLC films with various Si content were synthesized and the effects of the addition of Si on the microstructural, mechanical and high-temperature tribological properties of the films were investigated. The results indicate that Si doping leads to an obvious increase in the sp3/sp2 ratio of DLC films, likely due to the silicon atoms preferentially substitute the sp2-hybridized carbon atoms and augment the number of sp3 sites. With Si doping, the mechanical properties, including hardness and adhesion strength, were improved, while the residual stress of the DLC films was reduced. The addition of Si leads to higher thermal and mechanical stability of DLC films because the Si atoms inhibit the graphitization of the films at an elevated temperature. Better high-temperature tribological properties of the Si-DLC films under oxidative conditions were observed, which can be attributed to the enhanced thermal stability and formation of a Si-containing lubricant layer on the surfaces of the wear tracks. The nano-wear resistance of the DLC films was also improved by Si doping.

Growth and characterization of high-purity SiC single crystals

Science.gov (United States)

Augustine, G.; Balakrishna, V.; Brandt, C. D.

2000-04-01

High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

Highly sensitive work function hydrogen gas sensor based on PdNPs/SiO2/Si structure at room temperature

Directory of Open Access Journals (Sweden)

G. Behzadi pour

Full Text Available In this study, fabrication of highly sensitive PdNPs/SiO2/Si hydrogen gas sensor using experimental and theoretical methods has been investigated. Using chemical method the PdNPs are synthesized and characterized by X-ray diffraction (XRD. The average size of PdNPs is 11 nm. The thickness of the oxide film was 20 nm and the surface of oxide film analyzed using Atomic-force microscopy (AFM. The C-V curve for the PdNPs/SiO2/Si hydrogen gas sensor in 1% hydrogen concentration and at the room temperature has been reported. The response time and recovery time for 1% hydrogen concentration at room temperature were 1.2 s and 10 s respectively. The response (R% for PdNPs/SiO2/Si MOS capacitor hydrogen sensor was 96%. The PdNPs/SiO2/Si MOS capacitor hydrogen sensor showed very fast response and recovery times compared to SWCNTs/PdNPs, graphene/PdNPs, nanorod/PdNPs and nanowire/PdNPs hydrogen gas sensors. Keywords: Sensitive, Oxide film, Capacitive, Resistance

Numerical simulation of a high velocity impact on fiber reinforced materials

International Nuclear Information System (INIS)

Thoma, Klaus; Vinckier, David

1994-01-01

Whereas the calculation of a high velocity impact on isotropical materials can be done on a routine basis, the simulation of the impact and penetration process into nonisotropical materials such as reinforced concrete or fiber reinforced materials still is a research task.We present the calculation of an impact of a metallic fragment on a modern protective wall structure. Such lightweight protective walls typically consist of two layers, a first outer layer made out of a material with high hardness and a backing layer. The materials for the backing layer are preferably fiber reinforced materials. Such types of walls offer a protection against fragments in a wide velocity range.For our calculations we used a non-linear finite element Lagrange code with explicit time integration. To be able to simulate the high velocity penetration process with a continuous erosion of the impacting metallic fragment, we used our newly developed contact algorithm with eroding surfaces. This contact algorithm is vectorized to a high degree and especially robust as it was developed to work for a wide range of contact-impact problems. To model the behavior of the fiber reinforced material under the highly dynamic loads, we present a material model which initially was developed to calculate the crash behavior (automotive applications) of modern high strength fiber-matrix systems. The model can describe the failure and the postfailure behavior up to complete material crushing.A detailed simulation shows the impact of a metallic fragment with a velocity of 750ms -1 on a protective wall with two layers, the deformation and erosion of fragment and wall material and the failure of the fiber reinforced material. ((orig.))

Microstructure of buried CoSi2 layers formed by high-dose Co implantation into (100) and (111) Si substrates

International Nuclear Information System (INIS)

Bulle-Lieuwma, C.W.T.; Van Ommen, A.H.; Vandenhoudt, D.E.W.; Ottenheim, J.J.M.; de Jong, A.F.

1991-01-01

Heteroepitaxial Si/CoSi 2 /Si structures have been synthesized by implanting 170-keV Co + with doses in the range 1--3x10 17 Co + ions/cm 2 into (100) and (111) Si substrates and subsequent annealing. The microstructure of both the as-implanted and annealed structures is investigated in great detail by transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction. In the as-implanted samples, the Co is present as CoSi 2 precipitates, occurring both in aligned (A-type) and twinned (B-type) orientation. For the highest dose, a continuous layer of stoichiometric CoSi 2 is already formed during implantation. It is found that the formation of a connected layer, already during implantation, is crucial for the formation of a buried CoSi 2 layer upon subsequent annealing. Particular attention is given to the coordination of the interfacial Co atoms at the Si/CoSi 2 (111) interfaces of both types of precipitates. We find that the interfacial Co atoms at the A-type interfaces are fully sevenfold coordinated, whereas at the B-type interfaces they appear to be eightfold coordinated

CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation

International Nuclear Information System (INIS)

Lim, C. W.; Greene, J. E.; Petrov, I.

2006-01-01

CoSi 2 layers, CoSi 2 (parallel sign)(001) Si and [100] CoSi 2 (parallel sign)[100] Si , contain fourfold symmetric (111) twinned domains oriented such that (221) CoSi 2 (parallel sign)(001) Si and CoSi 2 (parallel sign)[110] Si . We demonstrate that high-flux low-energy (E Ar + =9.6 eV) Ar + ion irradiation during deposition dramatically increases the area fraction f u of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio J Ar + /J Co of the incident Ar + to Co fluxes is 1.4 to 0.72 with J Ar + /J Co =13.3. TEM analyses show that the early stages of RDE CoSi 2 (001) film growth proceed via the Volmer-Weber mode with independent nucleation of both untwinned and twinned islands. Increasing J Ar + /J Co results in larger values of both the number density and area of untwinned with respect to twinned islands. The intense Ar + ion bombardment creates additional low-energy adsorption sites that favor the nucleation of untwinned islands while collisionally enhancing Co surface mobilities which, in turn, increases the probability of itinerant Co adatoms reaching these sites

Pressure evolution of the high-frequency sound velocity in liquid water

International Nuclear Information System (INIS)

Krisch, M.; Sette, F.; D'Astuto, M.; Lorenzen, M.; Mermet, A.; Monaco, G.; Verbeni, R.; Loubeyre, P.; Le Toullec, R.; Ruocco, G.; Cunsolo, A.

2002-01-01

The high-frequency sound velocity v ∞ of liquid water has been determined to densities of 1.37 g/cm 3 by inelastic x-ray scattering. In comparison to the hydrodynamic sound velocity v 0 , the increase of v ∞ with density is substantially less pronounced, indicating that, at high density, the hydrogen-bond network is decreasingly relevant to the physical properties of liquid water. Furthermore, we observe an anomaly in v ∞ at densities around 1.12 g/cm 3 , contrasting the smooth density evolution of v 0

High-temperature mechanical and material design for SiC composites

International Nuclear Information System (INIS)

Ghoniem, N.M.

1992-01-01

Silicon Carbide (SiC) fiber reinforced composites (FRC's) are strong potential candidate structural and high heat flux materials for fusion reactors. During this past decade, they have been vigorously developed for use in aerospace and transportation applications. Recent fusion reactor systems studies, such as ARIES, have concluded that further development of SiC composites will result in significant safety, operational, and waste disposal advantages for fusion systems. A concise discussion of the main material and design issues related to the use of SiC FRC's as structural materials in future fusion systems is given in this paper. The status of material processing of SiC/SiC composites is first reviewed. The advantages and shortcomings of the leading processing technology, known as Chemical Vapor Infiltration are particularly highlighted. A brief outline of the design-relevant physical, mechanical, and radiation data base is then presented. SiC/SiC FRC's possess the advantage of increased apparent toughness under mechanical loading conditions. This increased toughness, however, is associated with the nucleation and propagation of small crack patterns in the structure. Design approaches and failure criteria under these conditions are discussed

High-pressure single-crystal elasticity study of CO{sub 2} across phase I-III transition

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jin S., E-mail: zhang72@illinois.edu; Bass, Jay D. [Department of Geology, University of Illinois, Urbana-Champaign, Illinois 61801 (United States); Shieh, Sean R. [Departments of Earth Sciences and Physics and Astronomy, University of Western Ontario, London, Ontario N6A 5B7 (Canada); Dera, Przemyslaw [Hawaii Institute of Geophysics and Planetology, University of Hawaii at Manoa, Honolulu, Hawaii 96822 (United States); Prakapenka, Vitali [Center for Advanced Radiation Sources, University of Chicago, Chicago, Illinois 60637 (United States)

2014-04-07

Sound velocities and elastic moduli of solid single-crystal CO{sub 2} were measured at pressures up to 11.7(3) GPa by Brillouin spectroscopy. The aggregate adiabatic bulk modulus (K{sub S}), shear modulus (G), and their pressure derivatives for CO{sub 2} Phase I are K{sub S0} = 3.4(6) GPa, G{sub 0} = 1.8(2) GPa, (dK{sub S}/dP){sub 0} = 7.8(3), (dG/dP){sub 0} = 2.5(1), (d{sup 2}K{sub S}/dP{sup 2}){sub 0} = −0.23(3) GPa{sup −1}, and (d{sup 2}G/dP{sup 2}){sub 0} = −0.10(1) GPa{sup −1}. A small increase of elastic properties was observed between 9.8(1) and 10.5(3) GPa, in agreement with the CO{sub 2} I-III transition pressure determined from previous x-ray diffraction experiments. Above the transition pressure P{sub T}, we observed a mixture dominated by CO{sub 2}-I, with minor CO{sub 2}-III. The CO{sub 2}-I + III mixture shows slightly increased sound velocities compared to pure CO{sub 2}-I. Elastic anisotropy calculated from the single-crystal elasticity tensor exhibits a decrease with pressure beginning at 7.9(1) GPa, which is lower than P{sub T}. Our results coincide with recent X-ray Raman observations, suggesting that a pressure-induced electronic transition is related to local structural and optical changes.

Moessbauer spectroscopy with a high velocity resolution: advances in biomedical, pharmaceutical, cosmochemical and nano technological research

International Nuclear Information System (INIS)

Oshtrakha, M.I.; Semionkina, V.A.

2011-01-01

Full text: Velocity resolution is a term denoted the smallest velocity step (2V/2 n ) in velocity driving system of Moessbauer spectrometer and velocity step for the one point in Moessbauer spectrum. Velocity resolution coefficient 1/2 n in velocity driving system is constant and velocity resolution value depends on velocity range (2V) only while velocity resolution in Moessbauer spectrum may be the same or less. Moessbauer spectroscopy with a high velocity resolution is a new method to measure precision high quality spectra. It is well known that one of the main parts of Moessbauer spectrometer is velocity driving system. Usual spectrometers are used sinusoidal or triangular velocity reference signal and 256 or 512 channels to form velocity signal. Such velocity driving system provides spectra measurement with a low velocity resolution (2 n =256 or 512 channels) with possibility to decrease measurement time and reach needed signal/noise ratio by spectra folding on the direct and reverse motion. However, these driving systems do not provide a low systematic error for velocity signal while folding increases integral velocity error due to different velocity errors on the direct and reverse motions. These problems can be neglected if a high precision is not required for spectra measurement. Nevertheless, further development of Moessbauer spectroscopy may be related to increase in precision and quality of spectra measurement with less instrumental (systematic) velocity error and to increase in velocity resolution for both spectrometer and spectrum. A new velocity driving system was developed for Moessbauer spectrometer SM- 2201. This system uses saw-tooth shape velocity reference signal and 2 n =4096 channels to form velocity signal. On the basis of SM-2201 and liquid nitrogen cryostat with moving absorber and temperature variation in the range of 295-85 K a new automated precision Moessbauer spectrometric system with a high velocity resolution was created

Controlling Directional Liquid Motion on Micro- and Nanocrystalline Diamond/β-SiC Composite Gradient Films.

Science.gov (United States)

Wang, Tao; Handschuh-Wang, Stephan; Huang, Lei; Zhang, Lei; Jiang, Xin; Kong, Tiantian; Zhang, Wenjun; Lee, Chun-Sing; Zhou, Xuechang; Tang, Yongbing

2018-01-30

In this Article, we report the synthesis of micro- and nanocrystalline diamond/β-SiC composite gradient films, using a hot filament chemical vapor deposition (HFCVD) technique and its application as a robust and chemically inert means to actuate water and hazardous liquids. As revealed by scanning electron microscopy, the composition of the surface changed gradually from pure nanocrystalline diamond (hydrophobic) to a nanocrystalline β-SiC surface (hydrophilic). Transmission electron microscopy and Raman spectroscopy were employed to determine the presence of diamond, graphite, and β-SiC phases. The as-prepared gradient films were evaluated for their ability to actuate water. Indeed, water was transported via the gradient from the hydrophobic (hydrogen-terminated diamond) to the hydrophilic side (hydroxyl-terminated β-SiC) of the gradient surface. The driving distance and velocity of water is pivotally influenced by the surface roughness. The nanogradient surface showed significant promise as the lower roughness combined with the longer gradient yields in transport distances of up to 3.7 mm, with a maximum droplet velocity of nearly 250 mm/s measured by a high-speed camera. As diamond and β-SiC are chemically inert, the gradient surfaces can be used to drive hazardous liquids and reactive mixtures, which was signified by the actuation of hydrochloric acid and sodium hydroxide solution. We envision that the diamond/β-SiC gradient surface has high potential as an actuator for water transport in microfluidic devices, DNA sensors, and implants, which induce guided cell growth.

High efficiency battery converter with SiC devices for residential PV systems

DEFF Research Database (Denmark)

Pham, Cam; Teodorescu, Remus; Kerekes, Tamas

2013-01-01

The demand for high efficiency and higher power density is a challenge for Si-based semiconductors due to the physical characteristics of material. These can be overcome by employing wide-band-gap materials like SiC. This paper compares a second generator SiC MOSFETs against a normally-on Trench...

The Influence of Pressure Die Casting Parameters on the Mechanical Properties of AlSi11/10 Vol.% SiC Composite

Directory of Open Access Journals (Sweden)

Konopka Z.

2014-03-01

Full Text Available The paper presents the method of preparing a composite slurry composed of AlSi11 alloy matrix and 10 vol.% of SiC particles, as well as the method of its high-pressure die casting and the measurement results concerning the tensile strength, the yield point, the elongation and hardness of the obtained composite. Composite castings were produced at various values of the piston velocity in the second stage of injection, diverse intensification pressure values, and various injection gate width values. There were found the regression equations describing the change of mechanical properties of the examined composite as a function of pressure die casting process parameters. The conclusion gives the analysis and the interpretation of the obtained results.

Atomic beam formed by the vaporization of a high velocity pellet

International Nuclear Information System (INIS)

Foster, C.A.; Hendricks, C.D.

1974-01-01

A description of an atomic beam formed by vaporizing an electrostatically accelerated high velocity pellet is given. Uniformly sized droplets of neon will be formed by the mechanical disintegration of liquid jet and frozen by adiabatic vaporization in vacuum. The pellets produced will be charged and accelerated by contacting a needle held at high potential. The accelerated pellets will be vaporized forming a pulse of mono-energetic atoms. The advantages are that a wide range of energies will be possible. The beam will be mono-energetic. The beam is inheretly pulsed, allowing a detailed time of flight velocity distribution measurement. The beam will have a high instantaneous intensity. The beam will be able to operate into an ultra high vacuum chamber

Irradiation effect on Nite-SiC/SiC composites

International Nuclear Information System (INIS)

Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

2007-01-01

Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

Amorphous SiC/c-ZnO-Based Quasi-Lamb Mode Sensor for Liquid Environments

Directory of Open Access Journals (Sweden)

Cinzia Caliendo

2017-05-01

Full Text Available The propagation of the quasi-Lamb modes along a-SiC/ZnO thin composite plates was modeled and analysed with the aim to design a sensor able to detect the changes in parameters of a liquid environment, such as added mass and viscosity changes. The modes propagation was modeled by numerically solving the system of coupled electro-mechanical field equations in three media. The mode shape, the power flow, the phase velocity, and the electroacoustic coupling efficiency (K2 of the modes were calculated, specifically addressing the design of enhanced-coupling, microwave frequency sensors for applications in probing the solid/liquid interface. Three modes were identified that have predominant longitudinal polarization, high phase velocity, and quite good K2: the fundamental quasi symmetric mode (qS0 and two higher order quasi-longitudinal modes (qL1 and qL2 with a dominantly longitudinal displacement component in one plate side. The velocity and attenuation of these modes were calculated for different liquid viscosities and added mass, and the gravimetric and viscosity sensitivities of both the phase velocity and attenuation were theoretically calculated. The present study highlights the feasibility of the a-SiC/ZnO acoustic waveguides for the development of high-frequency, integrated-circuit compatible electroacoustic devices suitable for working in a liquid environment.

Significantly Enhanced Dielectric Performances and High Thermal Conductivity in Poly(vinylidene fluoride)-Based Composites Enabled by SiC@SiO2 Core-Shell Whiskers Alignment.

Science.gov (United States)

He, Dalong; Wang, Yao; Song, Silong; Liu, Song; Deng, Yuan

2017-12-27

Design of composites with ordered fillers arrangement results in anisotropic performances with greatly enhanced properties along a specific direction, which is a powerful tool to optimize physical properties of composites. Well-aligned core-shell SiC@SiO 2 whiskers in poly(vinylidene fluoride) (PVDF) matrix has been achieved via a modified spinning approach. Because of the high aspect ratio of SiC whiskers, strong anisotropy and significant enhancement in dielectric constant were observed with permittivity 854 along the parallel direction versus 71 along the perpendicular direction at 20 vol % SiC@SiO 2 loading, while little increase in dielectric loss was found due to the highly insulating SiO 2 shell. The anisotropic dielectric behavior of the composite is perfectly understood macroscopically to have originated from anisotropic intensity of interfacial polarization based on an equivalent circuit model of two parallel RC circuits connected in series. Furthermore, finite element simulations on the three-dimensional distribution of local electric field, polarization, and leakage current density in oriented SiC@SiO 2 /PVDF composites under different applied electrical field directions unambiguously revealed that aligned core-shell SiC@SiO 2 whiskers with a high aspect ratio significantly improved dielectric performances. Importantly, the thermal conductivity of the composite was synchronously enhanced over 7 times as compared to that of PVDF matrix along the parallel direction at 20 vol % SiC@SiO 2 whiskers loading. This study highlights an effective strategy to achieve excellent comprehensive properties for high-k dielectrics.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

2014-09-28

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Zero-velocity solitons in high-index photonic crystal fibers

DEFF Research Database (Denmark)

Lægsgaard, Jesper

2011-01-01

Nonlinear propagation in slow-light states of high-index photonic crystal fibers (PCFs) is studied numerically. To avoid divergencies in dispersion and nonlinear parameters around the zero-velocity mode, a time-propagating generalized nonlinear Schrödinger equation is formulated. Calculated slow-...

Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

Science.gov (United States)

Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

2017-12-01

The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

Kinematics of Local, High-Velocity K dwarfs in the SUPERBLINK Proper Motion Catalog

Science.gov (United States)

Kim, Bokyoung; Lepine, Sebastien

2018-01-01

We present a study of the kinematics of 345,480 K stars within 2 kpc of the Sun, based on data from the SUPERBLINK catalog of stars with high proper motions (> 40 mas/yr), combined with data from the 2MASS survey and from the first GAIA release, which together yields proper motions accurate to ~2 mas/yr. All K dwarfs were selected based on their G-K colors, and photometric distances were estimated from a re-calibrated color-magnitude relationship for K dwarfs. We plot transverse velocities VT in various directions on the sky, to examine the local distribution of K dwarfs in velocity space. We have also obtained radial velocity information for a subsample of 10,128 stars, from RAVE and SDSS DR12, which we use to construct spatial velocity (U, V, W) plots. About a third (123,350) of the stars are high-velocity K dwarfs, with motions consistent with the local Galactic halo population. Our kinematic analysis suggests that their velocity-space distribution is very uniform, and we find no evidence of substructure that might arise, e.g., from local streams or moving groups.

Raman spectroscopic study of calcite III to aragonite transformation under high pressure and high temperature

Science.gov (United States)

Liu, Chuanjiang; Zheng, Haifei; Wang, Duojun

2017-10-01

In our study, a series of Raman experiments on the phase transition of calcite at high pressure and high temperature were investigated using a hydrothermal diamond anvil cell and Raman spectroscopy technique. It was found that calcite I transformed to calcite II and calcite III at pressures of 1.62 and 2.12 GPa and room temperature. With increasing temperature, the phase transition of calcite III to aragonite occurred. Aragonite was retained upon slowly cooling of the system, indicating that the transition of calcite III to aragonite was irreversible. Based on the available data, the phase boundary between calcite III and aragonite was determined by the following relation: P(GPa) = 0.013 × T(°C) + 1.22 (100°C ≤ T ≤ 170°C). It showed that the transition pressure linearly rose with increasing temperature. A better understanding of the stability of calcite III and aragonite is of great importance to further explore the thermodynamic behavior of carbonates and carbon cycling in the mantle.

High Precision UTDR Measurements by Sonic Velocity Compensation with Reference Transducer

Directory of Open Access Journals (Sweden)

Sam Stade

2014-07-01

Full Text Available An ultrasonic sensor design with sonic velocity compensation is developed to improve the accuracy of distance measurement in membrane modules. High accuracy real-time distance measurements are needed in membrane fouling and compaction studies. The benefits of the sonic velocity compensation with a reference transducer are compared to the sonic velocity calculated with the measured temperature and pressure using the model by Belogol’skii, Sekoyan et al. In the experiments the temperature was changed from 25 to 60 °C at pressures of 0.1, 0.3 and 0.5 MPa. The set measurement distance was 17.8 mm. Distance measurements with sonic velocity compensation were over ten times more accurate than the ones calculated based on the model. Using the reference transducer measured sonic velocity, the standard deviations for the distance measurements varied from 0.6 to 2.0 µm, while using the calculated sonic velocity the standard deviations were 21–39 µm. In industrial liquors, not only the temperature and the pressure, which were studied in this paper, but also the properties of the filtered solution, such as solute concentration, density, viscosity, etc., may vary greatly, leading to inaccuracy in the use of the Belogol’skii, Sekoyan et al. model. Therefore, calibration of the sonic velocity with reference transducers is needed for accurate distance measurements.

Effect of high-intensity ultrasonic irradiation on the modification of solidification microstructure in a Si-rich hypoeutectic Al-Si alloy

Energy Technology Data Exchange (ETDEWEB)

Das, A., E-mail: A.Das@swansea.ac.uk [Materials Research Centre, School of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PP (United Kingdom); Kotadia, H.R. [Brunel Centre for Advanced Solidification Technology, Brunel University, Uxbridge, UB8 3PH (United Kingdom)

2011-02-15

Effect of high-intensity ultrasound irradiation in modifying complex solidification microstructure is explored in a high Si containing Al-Si alloy and the origin of microstructural changes explained on the basis of nucleation and growth behaviour. Complete suppression of dendritic growth and dramatic refinement to globular morphology were observed for primary {alpha}-Al grains. Strong supportive evidence is presented towards enhanced and prolonged heterogeneous nucleation triggered by cavitation induced increase in the equilibrium melting point and effective dissipation of latent heat at the solidification front. Morphological evolution of eutectic Si and intermetallic particles is found to be dominated by coarsening and spherodisation from strong fluid flow in areas of intense cavitation near the ultrasonic radiator. Outside the region of direct energy transfer, Si particle morphology appears to be controlled predominantly by the imposed cooling conditions. Extremely fine and short Si-platelets observed in the intergranular spaces near the radiator are explained on the basis of probable rapid cooling of final liquid pockets of small volume and large surface area, rather than refinement through ultrasound.

Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

International Nuclear Information System (INIS)

Akushichi, T.; Shuto, Y.; Sugahara, S.; Takamura, Y.

2015-01-01

We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO x /n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO x barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels

Generation of High-order Group-velocity-locked Vector Solitons

OpenAIRE

Jin, X. X.; Wu, Z. C.; Zhang, Q.; Li, L.; Tang, D. Y.; Shen, D. Y.; Fu, S. N.; Liu, D. M.; Zhao, L. M.

2015-01-01

We report numerical simulations on the high-order group-velocity-locked vector soliton (GVLVS) generation based on the fundamental GVLVS. The high-order GVLVS generated is characterized with a two-humped pulse along one polarization while a single-humped pulse along the orthogonal polarization. The phase difference between the two humps could be 180 degree. It is found that by appropriate setting the time separation between the two components of the fundamental GVLVS, the high-order GVLVS wit...

Thermodynamics of high-pressure ice polymorphs : ices III and V

NARCIS (Netherlands)

Tchijov, [No Value; Ayala, RB; Leon, GC; Nagornov, O

Thermodynamic properties of high-pressure ice polymorphs, ices III and V, are studied theoretically. The results of TIP4P molecular dynamics simulations in the NPT ensemble are used to calculate the temperature dependence of the specific volume of ices III and V at pressures 0.25 and 0.5 GPa,

High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

Energy Technology Data Exchange (ETDEWEB)

Deng, Xunming [University of Toledo; Fan, Qi Hua

2011-12-31

The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

A new atomic force microscopy based technique for studying nanoscale friction at high sliding velocities

International Nuclear Information System (INIS)

Tambe, Nikhil S; Bhushan, Bharat

2005-01-01

Tribological studies on the micro/nanoscale conducted using an atomic force microscope (AFM) have been limited to low sliding velocities ( -1 ) due to inherent instrument limitations. Studies of tribological properties of materials, coatings and lubricants that find applications in micro/nanoelectromechanical systems and magnetic head-media in magnetic storage devices that operate at high sliding velocities have thus been rendered inadequate. We have developed a new technique to study nanotribological properties at high sliding velocities (up to 10 mm s -1 ) by modifying the commercial AFM set-up. A custom calibrated nanopositioning piezo stage is used for mounting samples and scanning is achieved by providing a triangular input voltage pulse. A capacitive sensor feedback control system is employed to ensure a constant velocity profile during scanning. Friction data are obtained by processing the AFM laser photo-diode signals using a high sampling rate data acquisition card. The utility of the modified set-up for nanoscale friction studies at high sliding velocities is demonstrated using results obtained from various tests performed to study the effect of scan size, rest time, acceleration and velocity on the frictional force for single crystal silicon (100) with native oxide

Porous SiC/SiC composites development for industrial application

International Nuclear Information System (INIS)

Maeta, S.; Hinoki, T.

2014-01-01

Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

Generalization of the Child-Langmuir law for nonzero injection velocities in a planar diode

International Nuclear Information System (INIS)

Puri, R.R.; Biswas, Debabrata; Kumar, Raghwendra

2004-01-01

The Child-Langmuir law relates the voltage applied across a planar diode to the saturation value J CL of current density that can be transmitted through it in case the injection velocity of electrons is zero. The Child-Langmuir current density J CL is, at the same time: (i) the maximum current density that can be transmitted through a planar diode, (ii) the current density below which the flow is steady and unidirectional in the long time limit, and (iii) the average transmitted current density for any value of injected current density above J CL . Existing generalizations of Child-Langmuir law to nonzero velocities of injection are based on the characteristics (i) and (ii) of J CL . This paper generalizes the law to nonzero velocities of injection based on the characteristic (iii) by deriving an analytical expression for the saturation value of current density. The analytical expression for the saturation current density is found to be well supported by numerical computations. A reason behind preferring the saturation property of the Child-Langmuir current density as the basis for its generalization is the importance of that property in numerical simulations of high current diode devices

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

Science.gov (United States)

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

Isolated Bacterial Spores at High-velocity Survive Surface Impacts in Vacuum

Science.gov (United States)

Austin, Daniel; Barney, Brandon

We present experiments in which bacterial spores were found to survive being accelerated in vacuum to velocities in the range 30-120 m/s and impacted on a dense target. In these experiments, spores of Bacillus subtilis spores were charged using electrospray at atmospheric pressure, dried, and then introduced into high vacuum. Through choice of skimmers and beam tubes, different velocity ranges were achieved. An image-charge detector observed the charged spores, providing total charge and velocity. The spores then impacted a glass target within a collection vessel. After the experiment, the collection vessel contents were extracted and cultured. Several positive and negative controls were used, including the use of antibiotic-resistant spores and antibiotic-containing (rifampicin) agar for culturing. These impact velocities are of particular interest for possible transport of bacterial spores from Mars to Phobos, and may have implications for planetary protection in a Phobos sample return mission. In addition, bacteria may reach similar velocities during a spacecraft crash (e.g., within components, or from spacecraft to surface materials during impact, etc.), raising concerns about forward contamination. The velocities of interest to transport of life between planets (panspermia) are somewhat higher, but these results complement shock-based experiments and contribute to the general discussion of impact survivability of organisms.

Reference values of fetal peak systolic blood flow Velocity in the ...

African Journals Online (AJOL)

Objectives: The objectives of this prospective cross sectional study are (i) to establish new reference values of peak systolic blood flow velocity measurement in the fetal middle cerebral artery (MCA-PSV) following validated methodological guidelines (ii) to correlate peak systolic velocity with gestational age and (iii) to ...

The Degradation Behavior of SiCf/SiO2 Composites in High-Temperature Environment

Science.gov (United States)

Yang, Xiang; Cao, Feng; Qing, Wang; Peng, Zhi-hang; Wang, Yi

2018-04-01

SiCf/SiO2 composites had been fabricated efficiently by Sol-Gel method. The oxidation behavior, thermal shock property and ablation behavior of SiCf/SiO2 composites was investigated. SiCf/SiO2 composites showed higher oxidation resistance in oxidation atmosphere, the flexural strength retention ratio was larger than 90.00%. After 1300 °C thermal shock, the mass retention ratio was 97.00%, and the flexural strength retention ratio was 92.60%, while after 1500 °C thermal shock, the mass retention ratio was 95.37%, and the flexural strength retention ratio was 83.34%. After 15 s ablation, the mass loss rate was 0.049 g/s and recession loss rate was 0.067 mm/s. The SiO2 matrix was melted in priority and becomes loosen and porous. With the ablation going on, the oxides were washed away by the shearing action of the oxyacetylene flame. The evaporation of SiO2 took away large amount of heat, which is also beneficial to the protection for SiCf/SiO2 composites.

Two-step simulation of velocity and passive scalar mixing at high Schmidt number in turbulent jets

Science.gov (United States)

Rah, K. Jeff; Blanquart, Guillaume

2016-11-01

Simulation of passive scalar in the high Schmidt number turbulent mixing process requires higher computational cost than that of velocity fields, because the scalar is associated with smaller length scales than velocity. Thus, full simulation of both velocity and passive scalar with high Sc for a practical configuration is difficult to perform. In this work, a new approach to simulate velocity and passive scalar mixing at high Sc is suggested to reduce the computational cost. First, the velocity fields are resolved by Large Eddy Simulation (LES). Then, by extracting the velocity information from LES, the scalar inside a moving fluid blob is simulated by Direct Numerical Simulation (DNS). This two-step simulation method is applied to a turbulent jet and provides a new way to examine a scalar mixing process in a practical application with smaller computational cost. NSF, Samsung Scholarship.

Functionalization of Fe3O4/SiO2 with N-(2-Aminoethyl-3-aminopropyl for Sorption of [AuCl4]-

Directory of Open Access Journals (Sweden)

Nuryono Nuryono

2016-08-01

Full Text Available Synthesis of Fe3O4/SiO2 modified with N-(2-aminoethyl-3-aminopropyl group (Fe3O4/SiO2/ED via coating method and its application for adsorption-desorption of anionic gold in aqueous solution have been conducted. The synthesized product was characterized with an X-ray diffractometer (XRD, a Fourier transform infrared (FT-IR spectrophotometer and a transmission electron microscopy (TEM. Adsorption of Au(III was conducted in a batch system and the variables included pH, contact time, and initial concentration were investigated. Results showed that magnetite/silica has been successfully functionalized with N-(2-aminoethyl-3-aminopropyl in a homogeneous system. Kinetics study showed that adsorption of Au(III followed the pseudo-second order model with rate constant of 0.710 g mmol L-1min-1. Furthermore, the experimental data fitted well with the Langmuir isotherm model with the maximum adsorption capacity for Au(III of 142.9 mg g-1 and the energy of 25.0 kJ mol-1. Gold loaded on the Fe3O4/SiO2/ED could be easily desorbed with 0.2 mol L-1 HCl containing 2 wt.% of thiourea with recovery of 99.8%. Fe3O4/SiO2/ED was reusable and stable in 5 cycles of adsorption-desorption with recovery more than 90%. Fe3O4/SiO2/ED showed high selectivity towards Au(III in the multimetal system Au(III/Cu(II/Cr(VI with the coefficient selectivity for αAu-Cu of 227.5and for αAu-Cr of 12.3.

Technological development for super-high efficiency solar cells. Technological development for crystalline compound solar cells (high-efficiency III-V tandem solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Kessho kagobutsu taiyo denchi no gijutsu kaihatsu (III-V zoku kagobutsu handotai taiyo denchi no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on technological development of III-V compound semiconductor solar cells in fiscal 1994. (1) On development of epitaxial growth technology of lattice mismatching systems, the optimum structure of InGaAs strain intermediate layers was studied for reducing a dislocation density by lattice mismatching of GaAs layer grown on Si substrate and difference in thermal expansion coefficient. The effect of strain layer on dislocation reduction was found only at 250dyne/cm in strain energy. Growth of GaAs layers on the Si substrate treated by hydrofluoric acid at low temperature was attempted by MBE method. As a dislocation distribution was controlled by laying different atoms at hetero-interface, the dislocation density of growing layer surfaces decreased by concentration of dislocation at hetero-interface. (2) On development of high-efficiency tandem cell structure, tunnel junction characteristics, cell formation process and optimum design method of lattice matching tandem cells were studied, while thin film cell formation was basically studied for lattice mismatching tandem cells. 45 figs., 8 tabs.

Deposition of magnetite particles from high velocity water onto isothermal tubes

International Nuclear Information System (INIS)

Burrill, K.A.

1977-02-01

The deposition rate of magnetite particles from a high velocity water slurry onto isothermal metal tubes was measured. The effects of velocity (5 to 100 m/s), slurry concentration (200 to 1000 mg Fe/kg H 2 O), temperature (25 0 to 90 0 C), pH (4 to 10 at 25 0 C), and tube material (nickel, Zircaloy-4) on deposition rate were studied. The data are interpreted in terms of two steps in series for deposition: a mass transfer step followed by a deposition or inertial coasting step. Mass transfer of particles through the bulk water phase apparently limits the deposition of particles at high Reynolds number

Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

International Nuclear Information System (INIS)

Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

2009-01-01

Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

Screening of siRNA nanoparticles for delivery to airway epithelial cells using high-content analysis

LENUS (Irish Health Repository)

Hibbitts, Alan

2011-08-01

Aims: Delivery of siRNA to the lungs via inhalation offers a unique opportunity to develop a new treatment paradigm for a range of respiratory conditions. However, progress has been greatly hindered by safety and delivery issues. This study developed a high-throughput method for screening novel nanotechnologies for pulmonary siRNA delivery. Methodology: Following physicochemical analysis, the ability of PEI–PEG–siRNA nanoparticles to facilitate siRNA delivery was determined using high-content analysis (HCA) in Calu-3 cells. Results obtained from HCA were validated using confocal microscopy. Finally, cytotoxicity of the PEI–PEG–siRNA particles was analyzed by HCA using the Cellomics® multiparameter cytotoxicity assay. Conclusion: PEI–PEG–siRNA nanoparticles facilitated increased siRNA uptake and luciferase knockdown in Calu-3 cells compared with PEI–siRNA.

Highly stable carbon-doped Cu films on barrierless Si

International Nuclear Information System (INIS)

Zhang, X.Y.; Li, X.N.; Nie, L.F.; Chu, J.P.; Wang, Q.; Lin, C.H.; Dong, C.

2011-01-01

Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 deg. C for 1 h, the resistivity maintains a low level at 2.7 μΩ-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance.

Photoelectrochemistry of III-V epitaxial layers and nanowires for solar energy conversion

Science.gov (United States)

Parameshwaran, Vijay; Enck, Ryan; Chung, Roy; Kelley, Stephen; Sampath, Anand; Reed, Meredith; Xu, Xiaoqing; Clemens, Bruce

2017-05-01

III-V materials, which exhibit high absorption coefficients and charge carrier mobility, are ideal templates for solar energy conversion applications. This work describes the photoelectrochemistry research in several IIIV/electrolyte junctions as an enabler for device design for solar chemical reactions. By designing lattice-matched epitaxial growth of InGaP and GaP on GaAs and Si, respectively, extended depletion region electrodes achieve photovoltages which provide an additional boost to the underlying substrate photovoltage. The InGaP/GaAs and GaP/Si electrodes drive hydrogen evolution currents under aqueous conditions. By using nanowires of InN and InP under carefully controlled growth conditions, current and capacitance measurements are obtained to reveal the nature of the nanowire-electrolyte interface and how light is translated into photocurrent for InP and a photovoltage in InN. The materials system is expanded into the III-V nitride semiconductors, in which it is shown that varying the morphology of GaN on silicon yields insights to how the interface and light conversion is modulated as a basis for future designs. Current extensions of this work address growth and tuning of the III-V nitride electrodes with doping and polarization engineering for efficient coupling to solar-driven chemical reactions, and rapid-throughput methods for III-V nanomaterials synthesis in this materials space.

Modeling Three-Terminal III-V/Si Tandem Solar Cells: Preprint

Energy Technology Data Exchange (ETDEWEB)

Warren, Emily L.; Deceglie, Michael G.; Stradins, Paul; Tamboli, Adele C.

2017-06-27

Three-terminal (3T) tandem cells fabricated by combining an interdigitated back contact (IBC) Si device with a wider bandgap top cell have the potential to provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects between cells. Here we develop a two dimensional device physics model to study the behavior of IBC Si solar cells operated in a 3T configuration. We investigate how different cell designs impact device performance and discuss the analysis protocol used to understand and optimize power produced from a single junction, 3T device.

Hole spin coherence in a Ge/Si heterostructure nanowire

DEFF Research Database (Denmark)

Higginbotham, Andrew P; Larsen, Thorvald Wadum; Yao, Jun

2014-01-01

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnit......Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order...

Spectroscopic XPEEM of highly conductive SI-doped GaN wires

Energy Technology Data Exchange (ETDEWEB)

Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Morin, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tchoulfian, P. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Chevalier, N. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Feyer, V. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Pernot, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Institut Universitaire de France, F-75005 Paris (France); Schneider, C.M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany)

2015-12-15

Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10{sup 21} at cm{sup −3} is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires. - Highlights: • XPEEM analysis of state-of-the-art, heavily doped GaN wires with insights on the issue of the origin of the increased conductivity. • Combined microscopic approach with Scanning Auger microscopy and X-ray Photoeletron Emission Microscopy, to quantity the electrically active Si-dopants in GaN. • The determined concentration is found in reasonable agreement with the one derived from bulk electrical measurements. • The proposed method is of interest for studying the electronics and chemistry of doping in other heavily doped semiconducting wires.

Gerichtete Erstarrung von Al-Si und Al-Si-Mn Legierungen unter dem Einfluss von magnetischen Wechselfeldern

OpenAIRE

Orth, Andreas

2013-01-01

In this work, samples of two alloys, Al-Si7 and Al-Si7-Mn1, are directionally solidified and their structure microscopically analysed. Thereby, the combined influence of induced current flow and intermetallic precipitates is of particular interest. A newly modified "Artemis" setup at the institute of material physics at the DLR in Cologne allows controlled solidification velocities of 30 to 240 micron/s under a constant temperature gradient of 3 K/mm. In using silica aerogels as part of the c...

Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

Science.gov (United States)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

The glycomic effect of N-acetylglucosaminyltransferase III overexpression in metastatic melanoma cells. GnT-III modifies highly branched N-glycans.

Science.gov (United States)

Link-Lenczowski, Paweł; Bubka, Monika; Balog, Crina I A; Koeleman, Carolien A M; Butters, Terry D; Wuhrer, Manfred; Lityńska, Anna

2018-04-01

N-acetylglucosaminyltransferase III (GnT-III) is known to catalyze N-glycan "bisection" and thereby modulate the formation of highly branched complex structures within the Golgi apparatus. While active, it inhibits the action of other GlcNAc transferases such as GnT-IV and GnT-V. Moreover, GnT-III is considered as an inhibitor of the metastatic potential of cancer cells both in vitro and in vivo. However, the effects of GnT-III may be more diverse and depend on the cellular context. We describe the detailed glycomic analysis of the effect of GnT-III overexpression in WM266-4-GnT-III metastatic melanoma cells. We used MALDI-TOF and ESI-ion-trap-MS/MS together with HILIC-HPLC of 2-AA labeled N-glycans to study the N-glycome of membrane-attached and secreted proteins. We found that the overexpression of GnT-III in melanoma leads to the modification of a broad range of N-glycan types by the introduction of the "bisecting" GlcNAc residue with highly branched complex structures among them. The presence of these unusual complex N-glycans resulted in stronger interactions of cellular glycoproteins with the PHA-L. Based on the data presented here we conclude that elevated activity of GnT-III in cancer cells does not necessarily lead to a total abrogation of the formation of highly branched glycans. In addition, the modification of pre-existing N-glycans by the introduction of "bisecting" GlcNAc can modulate their capacity to interact with carbohydrate-binding proteins such as plant lectins. Our results suggest further studies on the biological function of "bisected" oligosaccharides in cancer cell biology and their interactions with carbohydrate-binding proteins.

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

Science.gov (United States)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

Supernovae-generated high-velocity compact clouds

Science.gov (United States)

Yalinewich, A.; Beniamini, P.

2018-05-01

Context. A previous study claimed the discovery of an intermediate-mass black hole (IMBH). This hypothetical black hole was invoked in order to explain the high-velocity dispersion in one of several dense molecular clouds near the Galactic center. The same study considered the possibility that this cloud was due to a supernova explosion, but disqualified this scenario because no X-rays were detected. Aims: We here check whether a supernova explosion could have produced that cloud, and whether this explanation is more likely than an IMBH. More specifically, we wish to determine whether a supernova inside a dense molecular cloud would emit in the X-rays. Methods: We have approached this problem from two different directions. First, we performed an analytic calculation to determine the cooling rate by thermal bremsstrahlung and compared this time to the lifetime of the cloud. Second, we estimated the creation rate of these dense clouds in the central molecular zone (CMZ) region near the Galactic center, where they were observed. Based on this rate, we can place lower bounds on the total mass of IMBHs and clouds and compare this to the masses of the components of the CMZ. Results: We find that the cooling time of the supernova remnant inside a molecular cloud is shorter than its dynamical time. This means that the temperature in such a remnant would be much lower than that of a typical supernova remnant. At such a low temperature, the remnant is not expected to emit in the X-rays. We also find that to explain the rate at which such dense clouds are created requires fine-tuning the number of IMBHs. Conclusions: We find the supernova model to be a more likely explanation for the formation of high-velocity compact clouds than an IMBH.

Development of high temperature resistant ceramic matrix composites based on SiC- and novel SiBNC-fibres

International Nuclear Information System (INIS)

Daenicke, Enrico

2014-01-01

Novel ceramic fibres in the quaternary system Si-B-C-N exhibit excellent high temperature stability and creep resistance. In th is work it was investigated, to what extent these outstanding properties of SiBNC-fibres can be transferred into ceramic matrix composites (CMC) in comparison to commercial silicon carbide (SiC) fibres. For the CMC development the liquid silicon infiltration (LSI) as well as the polymer infiltration and pyrolysis process (PIP) was applied. Extensive correlations between fibre properties, fibre coating (without, pyrolytic carbon, lanthanum phosphate), process parameters of the CMC manufacturing method and the mechanical and microstructural properties of the CMC before and after exposure to air could be established. Hence, the potential of novel CMCs can be assessed and application fields can be derived.

Penetration of Liquid Jets into a High-velocity Air Stream

Science.gov (United States)

Chelko, Louis J

1950-01-01

Data are presented showing the penetration characteristics of liquid jets directed approximately perpendicular to a high-velocity air stream for jet-nozzle-throat diameters from 0.0135 to 0.0625 inch, air stream densities from 0.0805 to 0.1365 pound per cubic foot, liquid jet velocities from 168.1 to 229.0 feet per second and a liquid jet density of approximately 62 pounds per cubic foot. The data were analyzed and a correlation was developed that permitted the determination of the penetration length of the liquid jet for any operation condition within the range of variables investigated.

Terminal velocity of liquids and granular materials dispersed by a high explosive

Science.gov (United States)

Loiseau, J.; Pontalier, Q.; Milne, A. M.; Goroshin, S.; Frost, D. L.

2018-04-01

The explosive dispersal of a layer of solid particles or a layer of liquid surrounding a spherical high-explosive charge generates a turbulent, multiphase flow. Shock compression of the material layer during the initial acceleration may partially consolidate the material, leading to the formation of jet-like structures when the layer fragments and sheds particles upon release. Similarly, release of a shock-compressed liquid shell causes the nucleation of cavitation sites, leading to the radial breakup of the shell and the formation of jets upon expansion. In the current study, a wide variety of granular materials and liquids were explosively dispersed. The maximum terminal jet tip or shell velocity was measured using high-speed videography. Charges were constructed using thin-walled glass bulbs of various diameters and contained a central C-4 charge surrounded by the material to be dispersed. This permitted variation of the ratio of material mass to charge mass (M/C) from 4 to 300. Results indicated that material velocity broadly correlates with predictions of the Gurney model. For liquids, the terminal velocity was accurately predicted by the Gurney model. For granular materials, Gurney over-predicted the terminal velocity by 25-60%, depending on the M/C ratio, with larger M/C values exhibiting larger deficits. These deficits are explained by energy dissipation during the collapse of voids in the granular material bed. Velocity deficits were insensitive to the degree of jetting and granular material properties. Empirical corrections to the Gurney model are presented with improved agreement with the dry powder experimental velocities.

Terminal velocity of liquids and granular materials dispersed by a high explosive

Science.gov (United States)

Loiseau, J.; Pontalier, Q.; Milne, A. M.; Goroshin, S.; Frost, D. L.

2018-05-01

The explosive dispersal of a layer of solid particles or a layer of liquid surrounding a spherical high-explosive charge generates a turbulent, multiphase flow. Shock compression of the material layer during the initial acceleration may partially consolidate the material, leading to the formation of jet-like structures when the layer fragments and sheds particles upon release. Similarly, release of a shock-compressed liquid shell causes the nucleation of cavitation sites, leading to the radial breakup of the shell and the formation of jets upon expansion. In the current study, a wide variety of granular materials and liquids were explosively dispersed. The maximum terminal jet tip or shell velocity was measured using high-speed videography. Charges were constructed using thin-walled glass bulbs of various diameters and contained a central C-4 charge surrounded by the material to be dispersed. This permitted variation of the ratio of material mass to charge mass ( M/ C) from 4 to 300. Results indicated that material velocity broadly correlates with predictions of the Gurney model. For liquids, the terminal velocity was accurately predicted by the Gurney model. For granular materials, Gurney over-predicted the terminal velocity by 25-60%, depending on the M/ C ratio, with larger M/ C values exhibiting larger deficits. These deficits are explained by energy dissipation during the collapse of voids in the granular material bed. Velocity deficits were insensitive to the degree of jetting and granular material properties. Empirical corrections to the Gurney model are presented with improved agreement with the dry powder experimental velocities.

Net-shape forming and properties of high volume fraction SiCp/Al composites

International Nuclear Information System (INIS)

Ren Shubin; Qu Xuanhui; Guo Jia; He Xinbo; Qin Mingli; Shen Xiaoyu

2009-01-01

High performance SiCp/Al composites have been realized their net-shape forming by use of a novel process-ceramic injection molding (CIM) for the preparation of SiC preform and pressureless infiltration of aluminum alloys. The dimension precision of prepared SiCp/Al parts could reach about ±0.3%, and their properties could also better meet the requirement of electronic packaging on the materials. In this paper, the CIM process to fabricate SiC preform and the infiltration of SiC preform by Al alloys have been discussed in detail. Additionally, the properties of prepared SiCp/Al composites have also been given research and evaluation.

Highly flexible and robust N-doped SiC nanoneedle field emitters

KAUST Repository

Chen, Shanliang

2015-01-23

Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

Highly flexible and robust N-doped SiC nanoneedle field emitters

KAUST Repository

Chen, Shanliang; Ying, Pengzhan; Wang, Lin; Wei, Guodong; Gao, Fengmei; Zheng, Jinju; Shang, Minhui; Yang, Zuobao; Yang, Weiyou; Wu, Tao

2015-01-01

Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

Science.gov (United States)

Shklyaev, A A; Latyshev, A V

2016-12-01

We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

Science.gov (United States)

Fang, F; Markwitz, A

2009-05-01

Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

Atomistic Origins of High Capacity and High Structural Stability of Polymer-Derived SiOC Anode Materials.

Science.gov (United States)

Sun, Hong; Zhao, Kejie

2017-10-11

Capacity and structural stability are often mutually exclusive properties of electrodes in Li-ion batteries (LIBs): a gain in capacity is usually accompanied by the undesired large volumetric change of the host material upon lithiation. Polymer-derived ceramics, such as silicon oxycarbide (SiOC) of hybrid Si-O-C bonds, show an exceptional combination of high capacity and superior structural stability. We investigate the atomistic origins of the unique chemomechanical performance of carbon-rich SiOC using the first-principles theoretical approach. The atomic model of SiOC is composed of continuous Si-O-C units caged by a graphene-like cellular network and percolated nanovoids. The segregated sp 2 carbon network serves as the backbone to maintain the structural stability of the lattice. Li insertion is first absorbed at the nanovoid sites, and then it is accommodated by the SiOC tetrahedral units, excess C atoms, and topological defects at the edge of or within the segregated carbon network. SiOC expands up to 22% in volumetric strain at the fully lithiated capacity of 1230 mA h/g. We examine in great detail the evolution of the microscopic features of the SiOC molecule in the course of Li reactions. The first-principles modeling provides a fundamental understanding of the physicochemical properties of Si-based glass ceramics for their application in LIBs.

Surface segregation of Ge during Si growth on Ge/Si(0 0 1) at low temperature observed by high-resolution RBS

International Nuclear Information System (INIS)

Nakajima, K.; Hosaka, N.; Hattori, T.; Kimura, K.

2002-01-01

The Si/Ge/Si(0 0 1) multilayer with about 1 ML Ge layer is fabricated by evaporating Si overlayer on a Ge/Si(0 0 1) surface at 20-300 deg. C. The depth profile of the Ge atoms is observed by high-resolution Rutherford backscattering spectroscopy to investigate the possibility of Ge delta doping in Si. The observed profile of the Ge atoms spreads over several atomic layers even at 20 deg. C and a significant amount of Ge is located in the surface layer at higher temperatures. The results at 20-150 deg. C are well explained with two-layer model for surface segregation of the Ge atoms and the segregation rates are estimated. The activation energy for surface segregation of Ge atoms in amorphous Si is evaluated to be 0.035 eV, which is much smaller than the value reported for Si deposition at 500 deg. C. The small activation energy suggests that local heating during the Si deposition is dominant at low temperature

Energy dependence of fusion evaporation-residue cross sections in the 28Si+28Si reaction

International Nuclear Information System (INIS)

Vineyard, M.F.; Bauer, J.S.; Gosdin, C.H.; Trotter, R.S.; Kovar, D.G.; Beck, C.; Henderson, D.J.; Janssens, R.V.F.; Wilkins, B.D.; Rosner, G.; Chowdhury, P.; Ikezoe, H.; Kuhn, W.; Kolata, J.J.; Hinnefeld, J.D.; Maguire, C.F.; Mateja, J.F.; Prosser, F.W.; Stephans, G.S.F.

1990-01-01

Velocity distributions of mass-identified evaporation residues produced in the 28 Si+ 28 Si reaction have been measured at bombarding energies of 174, 215, 240, 309, 397, and 452 MeV using time-of-flight techniques. These distributions were used to identify evaporation residues and to separate the complete-fusion and incomplete-fusion components. Angular distributions and total cross sections were extracted at all six bombarding energies. The complete-fusion evaporation-residue cross sections and the deduced critical angular momenta are compared with lower energy data and the predictions of existing models

High velocity impact experiment (HVIE)

Energy Technology Data Exchange (ETDEWEB)

Toor, A.; Donich, T.; Carter, P.

1998-02-01

The HVIE space project was conceived as a way to measure the absolute EOS for approximately 10 materials at pressures up to {approximately}30 Mb with order-of-magnitude higher accuracy than obtainable in any comparable experiment conducted on earth. The experiment configuration is such that each of the 10 materials interacts with all of the others thereby producing one-hundred independent, simultaneous EOS experiments The materials will be selected to provide critical information to weapons designers, National Ignition Facility target designers and planetary and geophysical scientists. In addition, HVIE will provide important scientific information to other communities, including the Ballistic Missile Defense Organization and the lethality and vulnerability community. The basic HVIE concept is to place two probes in counter rotating, highly elliptical orbits and collide them at high velocity (20 km/s) at 100 km altitude above the earth. The low altitude of the experiment will provide quick debris strip-out of orbit due to atmospheric drag. The preliminary conceptual evaluation of the HVIE has found no show stoppers. The design has been very easy to keep within the lift capabilities of commonly available rides to low earth orbit including the space shuttle. The cost of approximately 69 million dollars for 100 EOS experiment that will yield the much needed high accuracy, absolute measurement data is a bargain!

Oxidation Study of an Ultra High Temperature Ceramic Coatings Based on HfSiCN

Science.gov (United States)

Sacksteder, Dagny; Waters, Deborah L.; Zhu, Dongming

2018-01-01

High temperature fiber-reinforced ceramic matrix composites (CMCs) are important for aerospace applications because of their low density, high strength, and significantly higher-temperature capabilities compared to conventional metallic systems. The use of the SiCf/SiC and Cf/SiC CMCs allows the design of lighter-weight, more fuel efficient aircraft engines and also more advanced spacecraft airframe thermal protection systems. However, CMCs have to be protected with advanced environmental barrier coatings when they are incorporated into components for the harsh environments such as in aircraft engine or spacecraft applications. In this study, high temperature oxidation kinetics of an advanced HfSiCN coating on Cf/SiC CMC substrates were investigated at 1300 C, 1400 C, and 1500 C by using thermogravimetric analysis (TGA). The coating oxidation reaction parabolic rate constant and activation energy were estimated from the experimental results. The oxidation reaction studies showed that the coatings formed the most stable, predominant HfSiO4-HfO2 scales at 1400 C. A peroxidation test at 1400 C then followed by subsequent oxidation tests at various temperatures also showed more adherent scales and slower scale growth because of reduced the initial transient oxidation stage and increased HfSiO4-HfO2 content in the scales formed on the HfSiCN coatings.

Rare earth element abundances in presolar SiC

Science.gov (United States)

Ireland, T. R.; Ávila, J. N.; Lugaro, M.; Cristallo, S.; Holden, P.; Lanc, P.; Nittler, L.; Alexander, C. M. O'D.; Gyngard, F.; Amari, S.

2018-01-01

Individual isotope abundances of Ba, lanthanides of the rare earth element (REE) group, and Hf have been determined in bulk samples of fine-grained silicon carbide (SiC) from the Murchison CM2 chondrite. The analytical protocol involved secondary ion mass spectrometry with combined high mass resolution and energy filtering to exclude REE oxide isobars and Si-C-O clusters from the peaks of interest. Relative sensitivity factors were determined through analysis of NIST SRM reference glasses (610 and 612) as well as a trace-element enriched SiC ceramic. When normalised to chondrite abundances, the presolar SiC REE pattern shows significant deficits at Eu and Yb, which are the most volatile of the REE. The pattern is very similar to that observed for Group III refractory inclusions. The SiC abundances were also normalised to s-process model predictions for the envelope compositions of low-mass (1.5-3 M⊙) AGB stars with close-to-solar metallicities (Z = 0.014 and 0.02). The overall trace element abundances (excluding Eu and Yb) appear consistent with the predicted s-process patterns. The depletions of Eu and Yb suggest that these elements remained in the gas phase during the condensation of SiC. The lack of depletion in some other moderately refractory elements (like Ba), and the presence of volatile elements (e.g. Xe) indicates that these elements were incorporated into SiC by other mechanisms, most likely ion implantation.

High velocity collisions between large dust aggregates at the limit for growing planetesimals

Science.gov (United States)

Wurm, G.; Teiser, J.; Paraskov, G.

2007-08-01

Planetesimals are km-size bodies supposed to be formed in protoplanetary disks as planetary precursors [1]. The most widely considered mechanism for their formation is based on mutual collisions of smaller bodies, a process which starts with the aggregation of (sub)-micron size dust particles. In the absence of events that lithify the growing dust aggregates, only the surface forces between dust particles provide adhesion and internal strength of the objects. It has been assumed that this might be a disadvantage as dust aggregates are readily destroyed by rather weak collisions. In fact, experimental research on dust aggregation showed that for collisions in the m/s range (sub)-mm size dust aggregates impacting a larger body do show a transition from sticking to rebound and/or fragmentation in collisions and no growth occurs at the large velocities [2, 3]. This seemed to be incompatible with typical collision velocities of small dust aggregates with m-size bodies which are expected to be on the order 50 m/s in protoplanetary disks [4]. We recently found that the experimental results cannot be scaled from m/s to tens of m/s collisions. In contrast to the assumptions and somewhat counterintuitive, it is the fragility of dust aggregates that allows growth at higher collision velocities. In impact experiments Wurm et al. [5] showed that between 13 m/s and 25 m/s a larger compact (target) body consisting of micron-size SiO2 dust particles accreted 50 % of the mass of a 1 cm dust projectile consisting of the same dust. For slower impacts the projectile only rebounded or fragmented slightly.

Chromospheric oscillations observed with OSO 8. III. Average phase spectra for Si II

International Nuclear Information System (INIS)

White, O.R.; Athay, R.G.

1979-01-01

Time series of intensity and Doppler-shift fluctuations in the Si II emission lines lambda816.93 and lambda817.45 are Fourier analyzed to determine the frequency variation of phase differences between intensity and velocity and between these two lines formed 300 km apart in the middle chromosphere. Average phase spectra show that oscillations between 2 and 9 mHz in the two lines have time delays from 35 to 40 s, which is consistent with the upward propagation of sound wave at 8.6-7.5 km s -1 . In this same frequency band near 3 mHz, maximum brightness leads maximum blueshift by 60 0 . At frequencies above 11 mHz where the power spectrum is flat, the phase differences are uncertain, but approximately 65% of the cases indicate upward propagation. At these higher frequencies, the phase lead between intensity and blue Doppler shift ranges from 0 0 to 180 0 with an average value of 90 0 . However, the phase estimates in this upper band are corrupted by both aliasing and randomness inherent to the measured signals. Phase differences in the two narrow spectral features seen at 10.5 and 27 mHz in the power spectra are shown to be consistent with properties expected for aliases of the wheel rotation rate of the spacecraft wheel section

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo

2018-04-14

The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

High-quality GaN epitaxially grown on Si substrate with serpentine channels

Science.gov (United States)

Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

2018-06-01

A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

Electronic Instability at High Flux-Flow Velocities in High-Tc Superconducting Films

DEFF Research Database (Denmark)

Doettinger, S. G.; Huebener, R. P.; Gerdemann, R.

1994-01-01

At high flux-flow velocities in type-II superconductors the nonequilibrium distribution of the quasiparticles leads to an electronic instability and an aburpt switching into a state with higher electric resistivity, as predicted by Larkin and Ovchinnikow (LO). We report the first obervation...... of this effect in a high-temperature superconductor, namely in epitaxial c-axis oriented films of YBa(2)Cu3O(7)-(delta). Using the LO therory, we have extracted from out results the inelastic quasiparticle scattering rare tau(in)(-1), which strongly decreases with decreasing temperature below T-c...

Cerium intermetallics with TiNiSi-type structure

Energy Technology Data Exchange (ETDEWEB)

Janka, Oliver; Niehaus, Oliver; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Chevalier, Bernard [Bordeaux Univ. CNRS (UPR 9048), Pessac (France). Inst. de Chimie de la Matiere Condensee de Bordeaux (ICMCB)

2016-08-01

Intermetallic compounds with the equiatomic composition CeTX that crystallize with the orthorhombic TiNiSi-type structure can be synthesized with electron-rich transition metals (T) and X = Zn, Al, Ga, Si, Ge, Sn, As, Sb, and Bi. The present review focusses on the crystal chemistry and chemical bonding of these CeTX phases and on their physical properties, {sup 119}Sn and {sup 121}Sb Moessbauer spectra, high-pressure effects, hydrogenation reactions and the formation of solid solutions in order to elucidate structure-property relationships. This paper is the final one of a series of four reviews on equiatomic intermetallic cerium compounds [Part I: Z. Naturforsch. 2015, 70b, 289; Part II: Z. Naturforsch. 2015, 70b, 695; Part III: Z. Naturforsch. 2016, 71b, 165].

Si surface passivation by SiOx:H films deposited by a low-frequency ICP for solar cell applications

International Nuclear Information System (INIS)

Zhou, H P; Wei, D Y; Xu, S; Xiao, S Q; Xu, L X; Huang, S Y; Guo, Y N; Khan, S; Xu, M

2012-01-01

Hydrogenated silicon suboxide (SiO x :H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH 4 + CO 2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiO x :H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s -1 . The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiO x :H-based passivation and emitter layers.

High-speed Si/GeSi hetero-structure Electro Absorption Modulator.

Science.gov (United States)

Mastronardi, L; Banakar, M; Khokhar, A Z; Hattasan, N; Rutirawut, T; Bucio, T Domínguez; Grabska, K M; Littlejohns, C; Bazin, A; Mashanovich, G; Gardes, F Y

2018-03-19

The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.

Different strain relaxation mechanisms in strained Si/Si sub 1 sub - sub x Ge sub x /Si heterostructures by high dose B sup + and BF sub 2 sup + doping

CERN Document Server

Chen, C C; Zhang, S L; Zhu, D Z; Vantomme, A

2002-01-01

Strained Si/Si sub 0 sub . sub 8 Ge sub 0 sub . sub 2 /Si heterostructures are implanted at room temperature with 7.5 keV B sup + and 33 keV BF sub 2 sup + ions to a high dose of 2x10 sup 1 sup 5 ions/cm sup 2 , respectively. The samples are subsequently subjected to three-step anneals (spacer anneal, oxidation anneal and rapid thermal anneal), which are used to simulate a real fabrication process of SiGe-based MOSFET devices. The damage induced by implantation and its recovery are characterized by 2 MeV sup 4 He sup + RBS/channeling spectrometry. A damage layer on the surface is induced by B sup + implantation, but BF sup + sub 2 ion implantation amorphizes the surface of Si/Si sub 0 sub . sub 8 Ge sub 0 sub . sub 2 /Si heterostructure. Channeling angular scans along the axial direction demonstrate that the strain stored in the SiGe layer could be nearly completely retained for the B sup + implanted and subsequently annealed sample. However, the strain in the BF sub 2 sup + implanted/annealed SiGe layer has...

Thermoconvective flow velocity in a high-speed magnetofluid seal after it has stopped

Science.gov (United States)

Krakov, M. S.; Nikiforov, I. V.

2012-09-01

Convective flow is investigated in the high-speed (linear velocity of the shaft seal is more than 1 m/s) magnetofluid shaft seal after it has been stopped. Magnetic fluid is preliminarily heated due to viscous friction in the moving seal. After the shaft has been stopped, nonuniform heated fluid remains under the action of a high-gradient magnetic field. Numerical analysis has revealed that in this situation, intense thermomagnetic convection is initiated. The velocity of magnetic fluid depends on its viscosity. For the fluid with viscosity of 2 × 10-4 m2/s the maximum flow velocity within the volume of magnetic fluid with a characteristic size of 1 mm can attain a value of 10 m/s.

Thermoconvective flow velocity in a high-speed magnetofluid seal after it has stopped

OpenAIRE

Krakov, M. S.; Nikiforov, I. V.

2012-01-01

Convective flow is investigated in the high-speed (linear velocity of the shaft seal is more than 1 m/s) magnetofluid shaft seal after it has been stopped. Magnetic fluid is preliminarily heated due to viscous friction in the moving seal. After the shaft has been stopped, nonuniform heated fluid remains under the action of a high-gradient magnetic field. Numerical analysis has revealed that in this situation, intense thermomagnetic convection is initiated. The velocity of magnetic fluid depen...

Effect of silica surface coating on the luminescence lifetime and upconversion temperature sensing properties of semiconductor zinc oxide doped with gallium(III) and sensitized with rare earth ions Yb(III) and Tm(III).

Science.gov (United States)

Li, Yuemei; Li, Yongmei; Wang, Rui; Zheng, Wei

2018-02-26

Optical sensing of temperature by measurement of the ratio of the intensities of the 700 nm emission and the 800 nm emission of Ga(III)-doped ZnO (GZO) nanoparticles (NPs) and of GZO NPs coated with a silica shell are demonstrated at 980 nm excitation. It is found that the relative sensitivity of SiO 2 @Yb/Tm/GZO is 6.2% K -1 at a temperature of 693 K. This is ~3.4 times higher than that of Yb/Tm/GZO NPs. Obviously, the SiO 2 shell structure decreases the rate of the nonradiative decay. The decay time of the 800 nm emission of the Yb/Tm/GZO NPs (15 mol% Ga; 7 mol% Yb; 0.5 mol% Tm) displays a biexponential decay with a dominant decay time of 148 μs and a second decay time of ~412 μs. The lifetime of the Yb/Tm/GZO NPs at 293 K, and of the SiO 2 @Yb/Tm/GZO NPs are ~412 μs. Both the Yb/Tm/GZO and SiO 2 @Yb/Tm/GZO can be used up to 693 K. These results indicate that the SiO 2 shell on the Yb/Tm/GZO is beneficial in terms of sensitivity and resolution. Graphical abstract The enhancement the decay time and thermal sensitivity in the SiO 2 @Yb/Tm/GZO shell@core structure have been studied compared to the Ga(III)-doped Yb/Tm-doped ZnO (Yb/Tm/GZO). The SiO 2 @Yb/Tm/GZO have good thermal accuracy up to 693 °C.

The H_6_0Si_6C_5_4 heterofullerene as high-capacity hydrogen storage medium

International Nuclear Information System (INIS)

Yong, Yongliang; Zhou, Qingxiao; Li, Xiaohong; Lv, Shijie

2016-01-01

With the great success in Si atoms doped C_6_0 fullerene and the well-established methods for synthesis of hydrogenated carbon fullerenes, this leads naturally to wonder whether Si-doped fullerenes are possible for special applications such as hydrogen storage. Here by using first-principles calculations, we design a novel high-capacity hydrogen storage material, H_6_0Si_6C_5_4 heterofullerene, and confirm its geometric stability. It is found that the H_6_0Si_6C_5_4 heterofullerene has a large HOMO-LUMO gap and a high symmetry, indicating it is high chemically stable. Further, our finite temperature simulations indicate that the H_6_0Si_6C_5_4 heterofullerene is thermally stable at 300 K. H_2 molecules would enter into the cage from the Si-hexagon ring because of lower energy barrier. Through our calculation, a maximum of 21 H_2 molecules can be stored inside the H_6_0Si_6C_5_4 cage in molecular form, leading to a gravimetric density of 11.11 wt% for 21H_2@H_6_0Si_6C_5_4 system, which suggests that the hydrogenated Si_6C_5_4 heterofullerene could be suitable as a high-capacity hydrogen storage material.

Decision making in high-velocity environments: implications for healthcare.

Science.gov (United States)

Stepanovich, P L; Uhrig, J D

1999-01-01

Healthcare can be considered a high-velocity environment and, as such, can benefit from research conducted in other industries regarding strategic decision making. Strategic planning is not only relevant to firms in high-velocity environments, but is also important for high performance and survival. Specifically, decision-making speed seems to be instrumental in differentiating between high and low performers; fast decision makers outperform slow decision makers. This article outlines the differences between fast and slow decision makers, identifies five paralyses that can slow decision making in healthcare, and outlines the role of a planning department in circumventing these paralyses. Executives can use the proposed planning structure to improve both the speed and quality of strategic decisions. The structure uses planning facilitators to avoid the following five paralyses: 1. Analysis. Decision makers can no longer afford the luxury of lengthy, detailed analysis but must develop real-time systems that provide appropriate, timely information. 2. Alternatives. Many alternatives (beyond the traditional two or three) need to be considered and the alternatives must be evaluated simultaneously. 3. Group Think. Decision makers must avoid limited mind-sets and autocratic leadership styles by seeking out independent, knowledgeable counselors. 4. Process. Decision makers need to resolve conflicts through "consensus with qualification," as opposed to waiting for everyone to come on board. 5. Separation. Successful implementation requires a structured process that cuts across disciplines and levels.

From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures

International Nuclear Information System (INIS)

Isa, Fabio; Salvalaglio, Marco; Dasilva, Yadira Arroyo Rojas; Jung, Arik; Isella, Giovanni; Erni, Rolf; Niedermann, Philippe; Gröning, Pierangelo; Montalenti, Francesco; Känel, Hans von

2016-01-01

We present a detailed experimental and theoretical analysis of the epitaxial stress relaxation process in micro-structured compositionally graded alloys. We focus on the pivotal SiGe/Si(001) system employing patterned Si substrates at the micrometre-size scale to address the distribution of threading and misfit dislocations within the heterostructures. SiGe alloys with linearly increasing Ge content were deposited by low energy plasma enhanced chemical vapour deposition resulting in isolated, tens of micrometre tall 3D crystals. We demonstrate that complete elastic relaxation is achieved by appropriate choice of the Ge compositional grading rate and Si pillar width. We investigate the nature and distribution of dislocations along the [001] growth direction in SiGe crystals by transmission electron microscopy, chemical defect etching and etch pit counting. We show that for 3 μm wide Si pillars and a Ge grading rate of 1.5% μm −1 , only misfit dislocations are present while their fraction is reduced for higher Ge grading rates and larger structures due to dislocation interactions. The experimental results are interpreted with the help of theoretical calculations based on linear elasticity theory describing the competition between purely elastic and plastic stress relaxation with increasing crystal width and Ge compositional grading rate.

Resonant coherent ionization in grazing ion/atom-surface collisions at high velocities

Energy Technology Data Exchange (ETDEWEB)

Garcia de Abajo, F J [Dept. de Ciencias de la Computacion e Inteligencia Artificial, Facultad de Informatica, Univ. del Pais Vasco, San Sebastian (Spain); Pitarke, J M [Materia Kondentsatuaren Fisika Saila, Zientzi Fakultatea, Euskal Herriko Univ., Bilbo (Spain)

1994-05-01

The resonant coherent interaction of a fast ion/atom with an oriented crystal surface under grazing incidence conditions is shown to contribute significantly to ionize the probe for high enough velocities and motion along a random direction. The dependence of this process on both the distance to the surface and the velocity of the projectile is studied in detail. We focus on the case of hydrogen moving with a velocity above 2 a.u. Comparison with other mechanisms of charge transfer, such as capture from inner shells of the target atoms, permits us to draw some conclusions about the charge state of the outgoing projectiles. (orig.)

Resonant coherent ionization in grazing ion/atom-surface collisions at high velocities

International Nuclear Information System (INIS)

Garcia de Abajo, F.J.; Pitarke, J.M.

1994-01-01

The resonant coherent interaction of a fast ion/atom with an oriented crystal surface under grazing incidence conditions is shown to contribute significantly to ionize the probe for high enough velocities and motion along a random direction. The dependence of this process on both the distance to the surface and the velocity of the projectile is studied in detail. We focus on the case of hydrogen moving with a velocity above 2 a.u. Comparison with other mechanisms of charge transfer, such as capture from inner shells of the target atoms, permits us to draw some conclusions about the charge state of the outgoing projectiles. (orig.)

Single-layer group IV-V and group V-IV-III-VI semiconductors: Structural stability, electronic structures, optical properties, and photocatalysis

Science.gov (United States)

Lin, Jia-He; Zhang, Hong; Cheng, Xin-Lu; Miyamoto, Yoshiyuki

2017-07-01

Recently, single-layer group III monochalcogenides have attracted both theoretical and experimental interest at their potential applications in photonic devices, electronic devices, and solar energy conversion. Excited by this, we theoretically design two kinds of highly stable single-layer group IV-V (IV =Si ,Ge , and Sn; V =N and P) and group V-IV-III-VI (IV =Si ,Ge , and Sn; V =N and P; III =Al ,Ga , and In; VI =O and S) compounds with the same structures with single-layer group III monochalcogenides via first-principles simulations. By using accurate hybrid functional and quasiparticle methods, we show the single-layer group IV-V and group V-IV-III-VI are indirect bandgap semiconductors with their bandgaps and band edge positions conforming to the criteria of photocatalysts for water splitting. By applying a biaxial strain on single-layer group IV-V, single-layer group IV nitrides show a potential on mechanical sensors due to their bandgaps showing an almost linear response for strain. Furthermore, our calculations show that both single-layer group IV-V and group V-IV-III-VI have absorption from the visible light region to far-ultraviolet region, especially for single-layer SiN-AlO and SnN-InO, which have strong absorption in the visible light region, resulting in excellent potential for solar energy conversion and visible light photocatalytic water splitting. Our research provides valuable insight for finding more potential functional two-dimensional semiconductors applied in optoelectronics, solar energy conversion, and photocatalytic water splitting.

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

International Nuclear Information System (INIS)

Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2008-01-01

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

Preliminary report on the IUE spectra of Mu(1) Scorpii

Energy Technology Data Exchange (ETDEWEB)

Sahade, J; Garcia, L G

1981-12-01

IUE ultraviolet spectra of the eclipsing binary Mu(1) Scorpii are examined. The available spectra correspond to primary eclipse and to one of the quadratures, and only display absorption lines. Many lines arising from resonance transitions are apparent and can be placed into groups. These include: sharp and deep lines identified with elements like O I, N I, C II, Si II, Al II, Fe II, Mg II which are probably circumstellar and interstellar lines that have about 1.5 FWHM identified with elements like Si III and Al III lines about 2 A FWHM identified as Si IV low excitation, relatively deep lines of about 1 A FWHM of C II, Si II, Si III, and Ti III and higher excitation, relatively broad and shallow lines of C III. The resonance lines of Si IV are characterized by a fine structure of as many as nine components which suggest velocity values ranging from -180 to about +150 km/s.

Structure of short-range-ordered iron(III)-precipitates formed by iron(II) oxidation in water containing phosphate, silicate, and calcium

Science.gov (United States)

Voegelin, A.; Frommer, J.; Vantelon, D.; Kaegi, R.; Hug, S. J.

2009-04-01

The oxidation of Fe(II) in water leads to the formation of Fe(III)-precipitates that strongly affect the fate of nutrients and contaminants in natural and engineered systems. Examples include the cycling of As in rice fields irrigated with As-rich groundwater or the treatment of drinking water for As removal. Knowledge of the types of Fe(III)-precipitates forming in such systems is essential for the quantitative modeling of nutrient and contaminant dynamics and for the optimization of water purification techniques on the basis of a mechanistic understanding of the relevant biogeochemical processes. In this study, we investigated the local coordination of Fe, P, and Ca in Fe(III)-precipitates formed by aeration of synthetic Fe(II)-containing groundwater with variable composition (pH 7, 2-30 mg/L Fe(II), 2-20 mg/L phosphate-P, 2-20 mg/L silicate-Si, 8 mM Na-bicarbonate or 2.5 mM Ca-&1.5 mM Mg-bicarbonate). After 4 hours of oxidation, Fe(III)-precipitates were collected on 0.2 µm nylon filters and dried. The precipitates were analyzed by Fe K-edge EXAFS (XAS beamline, ANKA, Germany) and by P and Ca K-edge XANES spectroscopy (LUCIA beamline, SLS, Switzerland). The Fe K-edge EXAFS spectra indicated that local Fe coordination in the precipitates systematically shifted with water composition. As long as water contained P, mainly short-range-ordered Fe(III)-phosphate formed (with molar P/Fe ~0.5). In the absence of P, Fe(III) precipitated as hydrous ferric oxide at high Si/Fe>0.5, as ferrihydrite at intermediate Si/Fe, and mainly as lepidocrocite at Si/Fe<0.2. Analysis of the EXAFS by shell-fitting indicated that Fe(III)-phosphates mainly contained mono- or oligomeric (edge- or corner-sharing) Fe and that the linkage between neighboring Fe(III)-octahedra changed from predominantly edge-sharing in Si-rich hydrous ferric oxide to edge- and corner-sharing in ferrihydrite. Electron microscopic data showed that changes in local precipitate structure were systematically

Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma

International Nuclear Information System (INIS)

Lee, Jin-Kwan; Lee, Gyeo-Re; Min, Jae-Ho; Moon, Sang Heup

2007-01-01

The dependence of Si 3 N 4 etch rates and the etch selectivity of SiO 2 to Si 3 N 4 on ion-incident angles was studied for different bias voltages in a high-density C 4 F 8 plasma. A Faraday cage and specially designed substrate holders were used to accurately control the angles of incident ions on the substrate surface. The normalized etch yield (NEY), defined as the etch yield obtained at a given ion-incident angle normalized to that obtained on a horizontal surface, was unaffected by the bias voltage in Si 3 N 4 etching, but it increased with the bias voltage in SiO 2 etching in the range of -100 to -300 V. The NEY changed showing a maximum with an increase in the ion-incident angle in the etching of both substrates. In the Si 3 N 4 etching, a maximum NEY of 1.7 was obtained at 70 deg. in the above bias voltage range. However, an increase in the NEY at high ion-incident angles was smaller for SiO 2 than for Si 3 N 4 and, consequently, the etch selectivity of SiO 2 to Si 3 N 4 decreased with an increase in the ion-incident angle. The etch selectivity decreased to a smaller extent at high bias voltage because the NEY of SiO 2 had increased. The characteristic changes in the NEY for different substrates could be correlated with the thickness of a steady-state fluorocarbon (CF x ) film formed on the substrates

Verification of the DUCT-III for calculation of high energy neutron streaming

Energy Technology Data Exchange (ETDEWEB)

Masukawa, Fumihiro; Nakano, Hideo; Nakashima, Hiroshi; Sasamoto, Nobuo [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Tayama, Ryu-ichi; Handa, Hiroyuki; Hayashi, Katsumi [Hitachi Engineering Co., Ltd., Hitachi, Ibaraki (Japan); Hirayama, Hideo [High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Shin, Kazuo [Kyoto Univ., Kyoto (Japan)

2003-03-01

A large number of radiation streaming calculations under a variety of conditions are required as a part of shielding design for a high energy proton accelerator facility. Since sophisticated methods are very time consuming, simplified methods are employed in many cases. For accuracy evaluation of a simplified code DUCT-III for high energy neutron streaming calculations, two kinds of benchmark problems based on the experiments were analyzed. Through comparison of the DUCT-III calculations with both the measurements and the sophisticated Monte Carlo calculations, DUCT-III was seen reliable enough for applying to the shielding design for the Intense Proton Accelerator Facility. (author)

Verification of the DUCT-III for calculation of high energy neutron streaming

CERN Document Server

Masukawa, F; Hayashi, K; Hirayama, H; Nakano, H; Nakashima, H; Sasamoto, N; Shin, K; Tayama, R I

2003-01-01

A large number of radiation streaming calculations under a variety of conditions are required as a part of shielding design for a high energy proton accelerator facility. Since sophisticated methods are very time consuming, simplified methods are employed in many cases. For accuracy evaluation of a simplified code DUCT-III for high energy neutron streaming calculations, two kinds of benchmark problems based on the experiments were analyzed. Through comparison of the DUCT-III calculations with both the measurements and the sophisticated Monte Carlo calculations, DUCT-III was seen reliable enough for applying to the shielding design for the Intense Proton Accelerator Facility.

High Performance Li4Ti5O12/Si Composite Anodes for Li-Ion Batteries

Directory of Open Access Journals (Sweden)

Chunhui Chen

2015-08-01

Full Text Available Improving the energy capacity of spinel Li4Ti5O12 (LTO is very important to utilize it as a high-performance Li-ion battery (LIB electrode. In this work, LTO/Si composites with different weight ratios were prepared and tested as anodes. The anodic and cathodic peaks from both LTO and silicon were apparent in the composites, indicating that each component was active upon Li+ insertion and extraction. The composites with higher Si contents (LTO:Si = 35:35 exhibited superior specific capacity (1004 mAh·g−1 at lower current densities (0.22 A·g−1 but the capacity deteriorated at higher current densities. On the other hand, the electrodes with moderate Si contents (LTO:Si = 50:20 were able to deliver stable capacity (100 mAh·g−1 with good cycling performance, even at a very high current density of 7 A·g−1. The improvement in specific capacity and rate performance was a direct result of the synergy between LTO and Si; the former can alleviate the stresses from volumetric changes in Si upon cycling, while Si can add to the capacity of the composite. Therefore, it has been demonstrated that the addition of Si and concentration optimization is an easy yet an effective way to produce high performance LTO-based electrodes for lithium-ion batteries.

Review and statistical analysis of the ultrasonic velocity method for estimating the porosity fraction in polycrystalline materials

International Nuclear Information System (INIS)

Roth, D.J.; Swickard, S.M.; Stang, D.B.; Deguire, M.R.