Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

Science.gov (United States)

Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

2012-07-01

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

Biaxial stress driven tetragonal symmetry breaking and high-temperature ferromagnetic semiconductor from half-metallic CrO2

Science.gov (United States)

Xiao, Xiang-Bo; Liu, Bang-Gui

2018-03-01

It is highly desirable to combine the full spin polarization of carriers with modern semiconductor technology for spintronic applications. For this purpose, one needs good crystalline ferromagnetic (or ferrimagnetic) semiconductors with high Curie temperatures. Rutile CrO2 is a half-metallic spintronic material with Curie temperature 394 K and can have nearly full spin polarization at room temperature. Here, we find through first-principles investigation that when a biaxial compressive stress is applied on rutile CrO2, the density of states at the Fermi level decreases with the in-plane compressive strain, there is a structural phase transition to an orthorhombic phase at the strain of -5.6 % , and then appears an electronic phase transition to a semiconductor phase at -6.1 % . Further analysis shows that this structural transition, accompanying the tetragonal symmetry breaking, is induced by the stress-driven distortion and rotation of the oxygen octahedron of Cr, and the half-metal-semiconductor transition originates from the enhancement of the crystal field splitting due to the structural change. Importantly, our systematic total-energy comparison indicates the ferromagnetic Curie temperature remains almost independent of the strain, near 400 K. This biaxial stress can be realized by applying biaxial pressure or growing the CrO2 epitaxially on appropriate substrates. These results should be useful for realizing full (100%) spin polarization of controllable carriers as one uses in modern semiconductor technology.

Defect-induced ferromagnetism in semiconductors: A controllable approach by particle irradiation

International Nuclear Information System (INIS)

Zhou, Shengqiang

2014-01-01

Making semiconductors ferromagnetic has been a long dream. One approach is to dope semiconductors with transition metals (TM). TM ions act as local moments and they couple with free carriers to develop collective magnetism. However, there are no fundamental reasons against the possibility of local moment formation from localized sp states. Recently, ferromagnetism was observed in nonmagnetically doped, but defective semiconductors or insulators including ZnO and TiO 2 . This kind of observation challenges the conventional understanding of ferromagnetism. Often the defect-induced ferromagnetism has been observed in samples prepared under non-optimized condition, i.e. by accident or by mistake. Therefore, in this field theory goes much ahead of experimental investigation. To understand the mechanism of the defect-induced ferromagnetism, one needs a better controlled method to create defects in the crystalline materials. As a nonequilibrium and reproducible approach of inducing defects, ion irradiation provides such a possibility. Energetic ions displace atoms from their equilibrium lattice sites, thus creating mainly vacancies, interstitials or antisites. The amount and the distribution of defects can be controlled by the ion fluence and energy. By ion irradiation, we have generated defect-induced ferromagnetism in ZnO, TiO 2 and SiC. In this short review, we also summarize some results by other groups using energetic ions to introduce defects, and thereby magnetism in various materials. Ion irradiation combined with proper characterizations of defects could allow us to clarify the local magnetic moments and the coupling mechanism in defective semiconductors. Otherwise we may have to build a new paradigm to understand the defect-induced ferromagnetism

Ballistic spin filtering across the ferromagnetic-semiconductor interface

Directory of Open Access Journals (Sweden)

Y.H. Li

2012-03-01

Full Text Available The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface between ferromagnetic metals and semiconductor superlattice is developed by exciting the spin polarized electrons into n-type AlAs/GaAs superlattice layer at a much higher energy level and then ballistically tunneling through the barrier into the ferromagnetic film. Since both the helicity-modulated and static photocurrent responses are experimentally measurable quantities, the physical quantity of interest, the relative asymmetry of spin-polarized tunneling conductance, could be extracted experimentally in a more straightforward way, as compared with previous models. The present physical model serves guidance for studying spin detection with advanced performance in the future.

Nonthermal Photocoercivity Effect in Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor

Science.gov (United States)

Kiessling, T.; Astakhov, G. V.; Hoffmann, H.; Korenev, V. L.; Schwittek, J.; Schott, G. M.; Gould, C.; Ossau, W.; Brunner, K.; Molenkamp, L. W.

2011-12-01

We report a photoinduced change of the coercive field of a low doped Ga1-xMnxAs ferromagnetic semiconductor under very low intensity illumination. This photocoercivity effect (PCE) is local and reversible, which enables the controlled formation of localized magnetization domains. The PCE arises from a light induced lowering of the domain wall pinning energy as confirmed by test experiments on high doped, fully metallic ferromagnetic Ga1-xMnxAs.

Prospects of high temperature ferromagnetism in (Ga, Mn)As semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Wang, K. Y.; Mašek, Jan; Edmonds, K. W.; König, J.; Sinova, J.; Polini, M.; Goncharuk, Natalya; MacDonald, A. H.; Sawicki, M.; Campion, R. P.; Zhao, L.X.; Foxon, C. T.; Gallagher, B. L.

2005-01-01

Roč. 72, č. 16 (2005), 165204/1-165204/13 ISSN 1098-0121 R&D Projects: GA ČR(CZ) GA202/05/0575; GA MŠk(CZ) LC510 Grant - others:EU FENIKS(XE) EC:G5RD-CT-2001-00535; EPSRC(GB) GR/S81407/01; Welch Foundation(GB) DE-FG03-02ER45958; Deutsche Forschungsgemeinschaft(DE) SFB 491 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.185, year: 2005

Anomalous hall effect in ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Niu, Q.; MacDonald, A. H.

2002-01-01

Roč. 88, č. 20 (2002), s. 207208-1-207208-4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * anomalous Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.323, year: 2002

Spin-current diode with a ferromagnetic semiconductor

International Nuclear Information System (INIS)

Sun, Qing-Feng; Xie, X. C.

2015-01-01

Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

Ferromagnetism in diluted magnetic semiconductor heterojunction systems

Czech Academy of Sciences Publication Activity Database

Lee, B.; Jungwirth, Tomáš; MacDonald, A. H.

2002-01-01

Roč. 17, - (2002), s. 393-403 ISSN 0268-1242 R&D Projects: GA ČR GA202/98/0085; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * heterostructures Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.241, year: 2002

Piezo-voltage control of magnetization orientation in a ferromagnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Althammer, M.; Brandlmaier, A.; Gepraegs, S.; Opel, M.; Gross, R. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Bihler, C.; Brandt, M.S. [Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching (Germany); Schoch, W.; Limmer, W. [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany); Goennenwein, S.T.B.

2008-06-15

The possibility to control magnetic properties via electrical fields is investigated in a piezoelectric actuator/ferromagnetic semiconductor thin film hybrid structure. Using anisotropic magnetoresistance techniques, the magnetic anisotropy and the magnetization orientation within the plane of the ferromagnetic film are measured quantitatively. The experiments reveal that the application of an electrical field to the piezoelectric actuator allows to continuously and reversibly rotate the magnetization orientation in the ferromagnet by about 70 . (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Infrared magneto-optical properties of (III, Mn)V ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Sinova, J.; Jungwirth, Tomáš; Kučera, Jan; MacDonald, A. H.

2003-01-01

Roč. 67, č. 23 (2003), s. 235203-1 - 235203-11 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-optical properties ac-Hall conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

Energy relaxation and heating of magnons in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Korenblit, I.Ya.; Tankhilevich, B.G.

1976-01-01

The warming-up of electrons and magnons by a high electrical field in ferromagnetic semiconductors with wide conduction bands has been considered. The warming-up of magnons determines the dependence of the magnetic characteristics of the semiconductor (for example, its magnetization) on the electric field and leads to some interesting peculiarities in the current-voltage characteristic (CVC). In some cases, owing to a rapid decrease of electrical conductivity with the increasing temperature of magnons, the CVC may contain a descending part. Since the energy relaxation of magnons occurs very slowly, the time during which the stationary state sets in, although varying widely as a function of the lattice temperature T and the electron gas concentration n, may reach values of the order of milliseconds

Magnetization relaxation in (Ga, Mn)As ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Sinova, J.; Jungwirth, Tomáš; Liu, X.; Sasaki, Y.; Furdyna, J. K.; Atkinson, W. A.; MacDonald, A. H.

2004-01-01

Roč. 69, č. 8 (2004), 085209/1-085209/6 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : magnetization relaxation * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.075, year: 2004

The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

Science.gov (United States)

Chantis, Athanasios

2009-03-01

I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

International Nuclear Information System (INIS)

An Xingtao; Liu Jianjun

2008-01-01

Based on the scattering approach, we investigate transport properties of electrons in a one-dimensional waveguide that contains a ferromagnetic/semiconductor/ferromagnetic heterojunction and tunnel barriers in the presence of Rashba and Dresselhaus spin-orbit interactions. We simultaneously consider significant quantum size effects, quantum coherence, Rashba and Dresselhaus spin-orbit interactions and noncollinear magnetizations. It is found that the tunnel barrier plays a decisive role in the transmission coefficient and shot noise of the ballistic spin electron transport through the heterojunction. When the small tunnel barriers are considered, the transport properties of electrons are quite different from those without tunnel barriers

Doping Properties of Ferromagnetic Semiconductors Investigated by the Hyperfine Interaction of Implanted Radioisotopes

CERN Multimedia

2002-01-01

One of the most promising prospective applications of semiconductors will be in the field of spinelectronics. Thereby polarized spins must be injected into semiconductor structures. Ferromagnetic semiconductors (FMS) have a potential for such applications because of the coexistence of semiconducting and ferromagnetic properties. A special group of such FMS are the chromium chalcogenides of type AB$_{2}$C$_{4}$ with B = Cr. They crystallise in the structure of normal spinel. In this Proposal the application of the perturbed angular correlation technique (= PAC) for the investigation of nuclear probes in these substances is described. The radioactive probes will be implanted at the ISOLDE separator. We will start these investigations with the substances CdCr$_{2}$Se$_{4}$, CdCr$_{2}$S$_{4}$, HgCr$_{2}$Se$_{4}$, CuCr$_{2}$Se$_{4}$ and CuCr$_{2}$S$_{4}$ which are ferromagnetic with Curie temperatures between 84.5 and 460 K. In addition to the popular $^{111}$In($^{111}$Cd), which we get from other facilities, we ...

Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure

Science.gov (United States)

Kostrov, Alexander I.; Stempitsky, Viktor R.; Kazimirchik, Vladimir N.

2008-07-01

In this work, we present a physical model and electrical macromodel for simulation of Magnetic Tunnel Junction (MTJ) effect based on Ferromagnetic/Insulator/Semiconductor (FIS) nanostructure. A modified Brinkman model has been proposed by including the voltage-dependent density of states of the ferromagnetic electrodes in order to explain the bias dependence magnitoresistance. The model takes into account injection of carriers in the semiconductor and Shottky barrier, electron tunneling through thin insulator and spin-transfer torque writing approach in memory cell. These very promising features should constitute the third generation of Magnetoresistive RAM (MRAM). Besides, the model can efficiently be used to design magnetic CMOS circuits. The behavioral macro-model has been developed by means of Verilog-AMS language and implemented on the Cadence Virtuoso platform with Spectre simulator.

Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

NARCIS (Netherlands)

Vera Marun, I.J.; Jansen, R.

2009-01-01

We describe the fabrication of multiterminal semiconductor/ferromagnet probes for a new technique to study magnetic nanostructures: spin-filter scanning tunneling microscopy. We describe the principle of the technique, which is based on spin-polarized tunneling and subsequent analysis of the spin

Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Sinova, J.; Wang, K. Y.; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Foxon, C. T.; Niu, Q.; MacDonald, A. H.

2003-01-01

Roč. 83, č. 2 (2003), s. 320-322 ISSN 0003-6951 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * dc transport properties * (Ga, Mn)As Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.049, year: 2003

Field-effect magnetization reversal in ferromagnetic semiconductor quantum wellls

Czech Academy of Sciences Publication Activity Database

Lee, B.; Jungwirth, Tomáš; MacDonald, A. H.

2002-01-01

Roč. 65, č. 19 (2002), s. 193311-1-193311-4 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductor quantum wells * magnetization reversal process Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao

2017-04-12

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlö gl, Udo; Huang, Wei

2017-01-01

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Theory of ferromagnetic (III,Mn)V semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Sinova, J.; Mašek, Jan; Kučera, Jan; MacDonald, A. H.

2006-01-01

Roč. 78, - (2006), s. 809-859 ISSN 0034-6861 R&D Projects: GA MŠk LC510; GA ČR GA202/05/0575 Grant - others:EPSRC(GB) GR/S81407/01; U.S. Department of Energy(US) DE-FG03-02ER45958; U.S. Office of Naval research(US) OMR-N000140610122 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * (III,Mn)V compounds Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 33.508, year: 2006

Effect of different conductivity between the spin polarons on spin injection in a ferromagnet/organic semiconductor system

International Nuclear Information System (INIS)

Mi Yilin; Zhang Ming; Yan Hui

2008-01-01

Spin injection across ferromagnet/organic semiconductor system with finite width of the layers was studied theoretically considering spin-dependent conductivity in the organic-semiconductor. It was found that the spin injection efficiency is directly dependent on the difference between the conductivity of the up-spin and down-spin polarons in the spin-injected organic system. Furthermore, the finite width of the structure, interfacial electrochemical-potential and conductivity mismatch have great influence on the spin injection process across ferromagnet/organic semiconductor interface

Curie temperature trends in (III, Mn)V ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; König, J.; Sinova, J.; Kučera, Jan; MacDonald, A. H.

2002-01-01

Roč. 66, č. 1 (2002), s. 012402-1-012402-4 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10; GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * Curie temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

Magnetic and transoprt properties of (III, Mn)V ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Sinova, J.; MacDonald, A. H.

2003-01-01

Roč. 104, - (2003), s. 103-112 ISSN 0587-4246 R&D Projects: GA ČR GA202/98/0085 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * magneto-transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.473, year: 2003

Effect of thermodynamic fluctuations of magnetization on the bound magnetic polaron state in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Bednarski, Henryk; Spałek, Józef

2014-01-01

We extend the theory of the bound magnetic polaron (BMP) in diluted paramagnetic semiconductors to the situation with a ferromagnetic phase transition. This is achieved by including the classical Gaussian fluctuations of magnetization from the quartic (non-Gaussian) term in the effective Ginzburg–Landau Hamiltonian for the spins. Within this approach, we find a ferromagnetically ordered state within the BMP in the temperature range well above the Curie temperature for the host magnetic semiconductor. Numerical results are compared directly with the recently available experimental data for the ferromagnetic semiconductor GdN. The agreement is excellent, given the simplicity of our model, and is because the polaron size (≃1.4 nm) encompasses a relatively large but finite number (N≈400) of quasiclassical spins S=7/2 coming from Gd 3+ ions. The presence of BMP invalidates the notion of critical temperature and thus makes the incorporation of classical Gaussian fluctuations sufficient to realistically describe the situation. (paper)

Ferromagnetic clusters induced by a nonmagnetic random disorder in diluted magnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Bui, Dinh-Hoi [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam); Physics Department, Hue University’s College of Education, 34 Le Loi, Hue (Viet Nam); Phan, Van-Nham, E-mail: phanvannham@dtu.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

2016-12-15

In this work, we analyze the nonmagnetic random disorder leading to a formation of ferromagnetic clusters in diluted magnetic semiconductors. The nonmagnetic random disorder arises from randomness in the host lattice. Including the disorder to the Kondo lattice model with random distribution of magnetic dopants, the ferromagnetic–paramagnetic transition in the system is investigated in the framework of dynamical mean-field theory. At a certain low temperature one finds a fraction of ferromagnetic sites transiting to the paramagnetic state. Enlarging the nonmagnetic random disorder strength, the paramagnetic regimes expand resulting in the formation of the ferromagnetic clusters.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

2013-01-01

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong

2013-09-26

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Ferromagnetic resonance features of degenerate GdN semiconductor

Energy Technology Data Exchange (ETDEWEB)

Vidyasagar, Reddithota, E-mail: dr.vidyasagar1979@gmail.com [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Sakurai, Takahiro; Shimokawa, Tokuro [Centre for Support to Research and Education Activities, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Ohta, Hitoshi [Molecular Photoscience Research Center and Graduate School of Science, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan)

2017-06-15

Using X-band Ferromagnetic Resonance (FMR) Spectroscopy, we demonstrate the microscopic ferromagnetic resonance features of degenerated GdN semiconductor. The FMR spectrum suggests a single resonance mode below 10 K; interestingly, this particular structure is found to exhibit a peculiar magnetic resonance (PMR) on the top of the uniform FMR while temperature increases from 12–36 K. The low-field PMR mode attributed to the differently magnetized part of the film with an easy in-plane axis. The narrow-field gap between PMR and uniform FMR suggests the strong coupling owning to the differently magnetized part with easy in-plane axis and the magnetized part with an out-of-plane axis. The saturation magnetization, cubic magnetocrystalline anisotropy, and uniaxial anisotropy of GdN epitaxial film have been evaluated by the angular-dependence FMR. - Highlights: • Observation of peculiar magnetic resonance (PMR) on the top of ferromagnetic resonance (FMR). • Newly evolving PMR manifests differently magnetized part of the film with an easy in-plane axis. • Narrow gap between PMR and FMR owing to the strong interaction between two spin–wave resonances. • Uniaxial anisotropy increases with GdN thickness decreases.

Non-Drude optical conductivity of (III, Mn)V ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Yang, S.R. E.; Sinova, J.; Jungwirth, Tomáš; Shim, Y. P.; MacDonald, A. H.

2003-01-01

Roč. 67, č. 4 (2003), s. 045205-1 - 045205-7 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : non-Drude optical conductivity * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

Ferromagnetic semiconductor-metal transition in europium monoxide

International Nuclear Information System (INIS)

Arnold, M.

2007-10-01

We present a microscopical model to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The physical properties of the model are systematically studied, whereas the main remark is on the interplay between magnetic order and the transport properties. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, obtained for EuO 1-x or Gd-doped Gd x Eu 1-x 0. In particular the doping dependence of the Curie temperature is reproduced The existence of correlation-induced local moments on the impurity sites is essential for this description. (orig.)

Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

International Nuclear Information System (INIS)

Ning, Deng; Lei, Zhang; Shu-Chao, Zhang; Pei-Yi, Chen; Jian-Shi, Tang

2010-01-01

For ferromagnetic metal (FM)/semiconductor (SC) structure with ohmic contact, the effect of carrier polarization in the semiconductor combined with drift part of injection current on current polarization is investigated. Based on the general model we established here, spin injection efficiency under different injection current levels is calculated. Under a reasonable high injection current, current polarization in the semiconductor is actually much larger than that predicted by the conductivity mismatch model because the effect of carrier polarization is enhanced by the increasing drift current. An appreciable current polarization of 1% could be achieved for the FM/SC structure via ohmic contact, which means that efficient spin injection from FM into SC via ohmic contact is possible. The reported dependence of current polarization on temperature is verified quantitatively. To achieve even larger spin injection efficiency, a gradient doping semiconductor is suggested to enhance the drift current effect

Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

CERN Document Server

Pereira, LMC; Wahl, U

Scientific findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last fe...

Theory of spin-polarized transport in ferromagnet-semiconductor structures: Unified description of ballistic and diffusive transport

International Nuclear Information System (INIS)

Lipperheide, R.; Wille, U.

2006-01-01

A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. Transport inside the (nondegenerate) semiconductor is described in terms of a thermoballistic current, in which electrons move ballistically in the electric field arising from internal and external electrostatic potentials, and are thermalized at randomly distributed equilibration points. Spin relaxation is allowed to take place during the ballistic motion. For arbitrary potential profile and arbitrary values of the momentum and spin relaxation lengths, an integral equation for a spin transport function determining the spin polarization in the semiconductor is derived. For field-driven transport in a homogeneous semiconductor, the integral equation can be converted into a second-order differential equation that generalizes the spin drift-diffusion equation. The spin polarization in ferromagnet-semiconductor structures is obtained by matching the spin-resolved chemical potentials at the interfaces, with allowance for spin-selective interface resistances. Illustrative examples are considered

Ferromagnetic semiconductor-metal transition in europium monoxide

Energy Technology Data Exchange (ETDEWEB)

Arnold, M.

2007-10-15

We present a microscopical model to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The physical properties of the model are systematically studied, whereas the main remark is on the interplay between magnetic order and the transport properties. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, obtained for EuO{sub 1-x} or Gd-doped Gd{sub x}Eu{sub 1-x}0. In particular the doping dependence of the Curie temperature is reproduced The existence of correlation-induced local moments on the impurity sites is essential for this description. (orig.)

Non-magnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting

Energy Technology Data Exchange (ETDEWEB)

Scarpulla, M.A.; Stone, P.R.; Sharp, I.D.; Haller, E.E.; Dubon, O.D.; Beeman, J.W.; Yu, K.M.

2008-02-05

The electronic and magnetic effects of intentional compensation with non-magnetic donors are investigated in the ferromagnetic semiconductors Ga1-xMnxAs and Ga1-xMnxP synthesized using ion implantation and pulsed-laser melting (II-PLM). It is demonstrated that compensation with non-magnetic donors and MnI have similarqualitative effects on materials properties. With compensation TC decreases, resistivity increases, and stronger magnetoresistance and anomalous Hall effect attributed to skew scattering are observed. Ga1-xMnxAs can be controllably compensated with Te through a metal-insulator transition through which the magnetic and electrical properties vary continuously. The resistivity of insulating Ga1-xMnxAs:Te can be described by thermal activation to the mobility edge and simply-activated hopping transport. Ga1-xMnxP doped with S is insulating at all compositions but shows decreasing TC with compensation. The existence of a ferromagnetic insulating state in Ga1-xMnxAs:Te and Ga1-xMnxP:S having TCs of the same order as the uncompensated materials demonstrates that localized holes are effective at mediating ferromagnetism in ferromagnetic semiconductors through the percolation of ferromagnetic 'puddles' which at low temperatures.

Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

International Nuclear Information System (INIS)

Zhou, Shengqiang

2015-01-01

Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III–V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III–V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III–V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III–V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components. (topical review)

Ballistic electron emissions microscopy (BEEM) of ferromagnet-semiconductor interfaces; Ballistische Elektronen Emissions Mikroskopie (BEEM) an Ferromagnet-Halbleitergrenzflaechen

Energy Technology Data Exchange (ETDEWEB)

Obernhuber, S.

2007-04-15

For current research on spin-transistors it is important to know the characteristics of ferromagnet semiconductor interfaces. The ballistic electron emission microscopy (BEEM) is a method to investigate such a buried interface with nanometer resolution. In this work several ferromagnet/GaAs(110) interfaces have been analysed concerning their homogeneity and mean local Schottky-barrier heights (SBH) have been determined. In Addition, the resulting integral SBH was calculated from the distribution of the local SBHs and compared with the SBH determined from voltage/current characteristics. The areas with a low SBH dominate the current conduction across the interface. Additional BEEM measurements on (AlGaAs/GaAs) heterostructures have been performed. This heterostructures consist of 50 nm AlGaAs/GaAs layers. The results of the BEEM measurements indicate, that the GaAs QWs are defined by AlGaAs barriers. The transition from AlGaAs to GaAs is done within 10 nm. (orig.)

Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

Science.gov (United States)

Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

2018-06-01

The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

Science.gov (United States)

Bui, Cong Tinh; Garcia, Christina A. C.; Tu, Nguyen Thanh; Tanaka, Masaaki; Hai, Pham Nam

2018-05-01

Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

Ferromagnetism in doped or undoped spintronics nanomaterials

Science.gov (United States)

Qiang, You

2010-10-01

Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

KAUST Repository

Li, Peng

2016-06-01

In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: electronic structure calculations

Czech Academy of Sciences Publication Activity Database

Mašek, Jan; Kudrnovský, Josef; Máca, František; Sinova, J.; MacDonald, A. H.; Champion, R.P.; Gallagher, B. L.; Jungwirth, Tomáš

2007-01-01

Roč. 75, č. 4 (2007), 045202/1-045202/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/0583 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * electronic structure calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

Lattice effects on ferromagnetism in perovskite ruthenates

Science.gov (United States)

Cheng, J.-G.; Zhou, J.-S.; Goodenough, John B.

2013-01-01

Ferromagnetism and its evolution in the orthorhombic perovskite system Sr1–xCaxRuO3 have been widely believed to correlate with structural distortion. The recent development of high-pressure synthesis of the Ba-substituted Sr1–yBayRuO3 makes it possible to study ferromagnetism over a broader phase diagram, which includes the orthorhombic Imma and the cubic phases. However, the chemical substitutions introduce the A-site disorder effect on Tc, which complicates determination of the relationship between ferromagnetism and structural distortion. By clarifying the site disorder effect on Tc in several unique series of ruthenates in which the average bond length 〈A–O〉 remains the same but the bond-length variance varies, we are able to demonstrate a parabolic curve of Tc versus mean bond length 〈A–O〉. A much higher Tc ∼ 177 K than that found in orthorhombic SrRuO3 can be obtained from the curve at a bond length 〈A–O〉, which makes the geometric factor t = 〈A–O〉/(√2〈Ru–O〉) ∼ 1. This result reveals not only that the ferromagnetism in the ruthenates is extremely sensitive to the lattice strain, but also that it has an important implication for exploring the structure–property relationship in a broad range of oxides with perovskite or a perovskite-related structure. PMID:23904477

Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

Science.gov (United States)

Craco, L.; Laad, M. S.; Müller-Hartmann, E.

2003-12-01

Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2

International Nuclear Information System (INIS)

Sun, F.; Zhao, G. Q.; Escanhoela, C. A. Jr.

2017-01-01

We investigate doping- and pressure-induced changes in the electronic state of Mn 3d and As 4p orbitals in II-II-V based diluted magnetic semiconductor (Ba_1_-_x,K_x)(Zn_1_-_y,Mn_y)_2As_2 to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T_c = 230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption and dichroism) show that the emergence, and further enhancement of ferromagnetic interactions with increased hole doping into the As 4p band is accompanied by a decrease in local 3d spin density at Mn sites. This is a result of increasing Mn 3d - As 4p hybridization with hole doping which enhances indirect exchange interactions between Mn dopants and gives rise to induced magnetic polarization in As 4p states. On the contrary, application of pressure suppresses exchange interactions. While Mn Kβ emission spectra show a weak response of 3d state to pressure, clear As 4p band broadening (hole delocalization) is observed under pressure ultimately leading to loss of ferromagnetism concomitant with a semiconductor to metal transition. The pressure response of As 4p and Mn 3d states is intimately connected with the evolution of the As-As interlayer distance and the geometry of the MnAs_4 tetrahedral units, which we probed with X-ray diffraction. Our results indicate that hole doping increases the degree of covalency between the anion (As) p states and cation (Mn) d states in the MnA_s_4 tetrahedron, a crucial ingredient to promote indirect exchange interactions between Mn dopants and high T_c ferromagnetism. As a result, the instability of ferromagnetism and semiconducting state against pressure is mainly dictated by delocalization of anion p states.

Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

International Nuclear Information System (INIS)

Povzner, A.A.; Volkov, A.G.

2017-01-01

Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

Energy Technology Data Exchange (ETDEWEB)

Povzner, A.A., E-mail: a.a.povzner@urfu.ru; Volkov, A.G., E-mail: agvolkov@yandex.ru

2017-06-15

Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

Feasibility of introducing ferromagnetic materials to onboard bulk high-Tc superconductors to enhance the performance of present maglev systems

International Nuclear Information System (INIS)

Deng, Zigang; Wang, Jiasu; Zheng, Jun; Zhang, Ya; Wang, Suyu

2013-01-01

Highlights: ► Ferromagnetic materials guide the flux distribution of the PMG to bulk positions. ► With ferromagnetic materials, guidance performance can be enhanced greatly. ► A new HTS Maglev system with onboard ferromagnetic materials is designed. ► The design can meet large guidance force requirements for practical applications. -- Abstract: Performance improvement is a long-term research task for the promotion of practical application of promising high-temperature superconducting (HTS) magnetic levitation (maglev) vehicle technologies. We studied the feasibility to enhance the performance of present HTS Maglev systems by introducing ferromagnetic materials to onboard bulk superconductors. The principle here is to make use of the high magnetic permeability of ferromagnetic materials to alter the flux distribution of the permanent magnet guideway for the enhancement of magnetic field density at the position of the bulk superconductors. Ferromagnetic iron plates were added to the upper surface of bulk superconductors and their geometric and positioning effects on the maglev performance were investigated experimentally. Results show that the guidance performance (stability) was enhanced greatly for a particular setup when compared to the present maglev system which is helpful in the application where large guidance forces are needed such as maglev tracks with high degrees of curves

Nonthermal Photocoercivity Effect in a Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor

Science.gov (United States)

Astakhov, G. V.; Hoffmann, H.; Korenev, V. L.; Kiessling, T.; Schwittek, J.; Schott, G. M.; Gould, C.; Ossau, W.; Brunner, K.; Molenkamp, L. W.

2009-05-01

We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

Science.gov (United States)

Chambers, Scott A.; Gallagher, Bryan

2008-05-01

-orbit coupling. They have also led to the demonstration of a wide range of novel phenomena including some, like tunneling anisotropic magnetoresistance, which have subsequently been achieved in metal ferromagnetic systems. However despite considerable effort over many years the maximum Curie point achieved in (Ga,Mn)As is still less than 200 K. So unless some major new breakthrough is achieved these materials are unlikely to be of use for practical spin electronics technologies. In 2000, Dietl et al [1] published a seminal paper in which mean field theory was used to predict which of the common diamagnetic semiconductors would exhibit a Curie point above ambient if doped with 5 at.% Mn and a hole concentration of 3.5 × 1020 cm-3. Of the many host semiconductors simulated, only ZnO and GaN were predicted to exhibit a critical temperature in excess of 300 K. Since 2000, high-Tc DMS research has proliferated in both experimental and theoretical arenas. Many papers have been published containing claims of new DMS materials based largely on limited film growth, powder diffraction, and magnetometry. In these papers, a film which exhibits a hysteretic SQUID or VSM loop at 300 K and phase purity with only the host semiconductor detected by XRD are often claimed to be true ferromagnetic DMSs. Many of these papers are flawed because the criteria for a well-defined DMS are much more extensive. These include: (i) a random dopant distribution, (ii) a well-known and preferably unique charge state and preferentially a unique local structural environment for the dopant, (iii) a demonstrated coupling of the dopant spin to the host band structure, leading to spin polarization of the majority carriers, and (iv) a rational dependence of the saturation magnetization and Curie point on the magnetic dopant and carrier concentrations. Implicit in this list is that trivial causes of ferromagnetism, such as magnetic contamination and magnetic secondary phase formation, are eliminated. Yet, in many

Quasi-phase transformation in ferromagnetic semiconductors with two-charged donors

International Nuclear Information System (INIS)

Kovalenko, A.A.; Nagaev, Eh.L.

1978-01-01

Effect of term inversion of two-charged donors 1s2s → 1s 2 on properties of ferromagnetic semiconductors, has been investigated. Term inversion is accompanied by changes in local magnetic ordering in the donor area and takes place as spread phase transformation of the first type in the system of n 2 atoms, enveloped by donor 2s-orbit. It is a reason for creating not only heat capacity peak at Tsub(c), but another peak at inversion temperature Tsub(i) as well. At temperatures T > Tsub(i) introduction of external magnetic field can lead to a reverse term inversion 1s 2 → 1s2s, under that condition crystal magnetization should clearly increase. Term inversion tells upon electric properties of crystals: in Ti inversion point, the energy of conductivity activation of ungenerate semiconductors changes abruptly. In the case of larger concentrations of donors, term inversion can lead to metal-insulator transformation. Analysis of experimental data on magnetic susceptibility of EuO crystals with oxygen vacancies, shows that transformation in these crystals takes place according to a different mechanism

Ferromagnetic semiconductor-metal transition in heterostructures of europium monoxide

Energy Technology Data Exchange (ETDEWEB)

Stollenwerk, Tobias; Kroha, Johann [Physikalisches Institut der Universitaet Bonn (Germany)

2012-07-01

Experiments on thin films of electron doped europium monoxide show a simultaneous ferromagnetic semiconductor-metal transition which goes along with a huge drop in resistivity over several orders of magnitude. Therefore, this material is a very promising candidate for spintronics applications. We have developed a theory which correctly predicts the simultaneous phase transition in thin films of electron doped EuO and the increase of the Curie temperature T{sub C} with doping concentration. The origin of the increased T{sub C} lies in the enhanced RKKY interaction between the localized 4f moments of the Eu atoms. Therefore, the phase transition is controlled by the population of the conduction band. We investigate the influence of film thickness and interface effects on the population of the conduction band and on the magnetic and electronic properties of the EuO film.

Detection of stacking faults breaking the [110]/[110] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

International Nuclear Information System (INIS)

Kopecky, M.; Kub, J.; Maca, F.; Masek, J.; Pacherova, O.; Rushforth, A. W.; Gallagher, B. L.; Campion, R. P.; Novak, V.; Jungwirth, T.

2011-01-01

We report on high-resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults that are present in the (111) and (111) planes and absent in the (111) and (111) planes. They occupy 10 -2 %-10 -1 % of the ferromagnetic epilayer volume while no stacking faults are detected in the controlled, undoped GaAs epilayer. Full-potential density functional calculations provide additional evidence that the formation of the stacking faults is promoted by Mn attracted to these structural defects. The enhanced Mn density along the common [110] direction of the stacking fault planes produces a symmetry-breaking mechanism of a strength and sense that can account for the uniaxial [110]/[110] magnetocrystalline anisotropy of these ferromagnetic semiconductors.

Fe concentration dependence of tunneling magnetoresistance in magnetic tunnel junctions using group-IV ferromagnetic semiconductor GeFe

Directory of Open Access Journals (Sweden)

Kosuke Takiguchi

2017-10-01

Full Text Available Group-IV-based ferromagnetic semiconductor Ge1−xFex (GeFe is one of the most promising materials for spin injection/detection in Si and Ge. In this paper, we demonstrate a systematic study of tunneling magnetoresistance (TMR in magnetic tunnel junctions (MTJs composed of Fe/MgO/Ge1−xFex with various Fe concentrations (x = 0.065, 0.105, 0.140, and 0.175. With increasing x, the TMR ratio increases up to 1.5% when x≤ 0.105, and it decreases when x> 0.105. This is the first observation of the TMR ratio over 1% in MTJs containing a group-IV ferromagnetic semiconductor. With increasing x, while the Curie temperature of GeFe increases, the MgO surface becomes rougher, which is thought to be the cause of the upper limit of the TMR ratio. The quality of the MgO layer on GeFe is an important factor for further improvement of TMR in Fe/MgO/GeFe MTJs.

Origin of ferromagnetism in diluted magnetic semiconductors; Moegliche Ursachen des Ferromagnetismus verduennter magnetischer Halbleiter

Energy Technology Data Exchange (ETDEWEB)

Biegger, E.

2007-02-14

In this work Mn-doped Ge single crystals and thin films of the metal doped oxidic semiconductors ZnO and SnO{sub 2} were prepared and investigated in detail. Structural, magnetic, and electronic properties of Mn-doped Ge single crystals (0ferromagnetic order between 150 and 285 K. X-ray absorption spectroscopy (XAS) at the Mn L{sub 2,3} absorption edge shows that Mn ions in Mn-rich and Mn-poor parts are in the divalent high-spin state. Resonant valence-band photoelectron spectroscopy (ResPES) was performed at the Mn L{sub 2,3} absorption edge for the Mn-poor region. The extracted Mn 3d partial density of states shows a low spectral weight near E{sub F} and a broad feature around 4.8 eV of binding energy which is in good agreement with Mn-rich phase. We identify Mn{sub 11}Ge{sub 8} phase segregation as the most possible origin of ferromagnetism in both Mn-rich and Mn-poor regions of the Mn{sub x}Ge{sub 1-x} samples. Further on we investigated the structural, magnetic and optical properties, as well as the electronic structure of epitaxial Me-doped ZnO and SnO{sub 2} films (Me=Co,Fe; 0.05ferromagnetic behavior at low temperature for samples prepared at oxygen-poor conditions whereas the samples prepared at oxygen-rich conditions did not show ferromagnetic behavior corroborating that ferromagnetism in Co-doped ZnO is related to oxygen-related defects. Fe-doped ZnO samples do not show ferromagnetic behaviour at all, although X-ray absorption spectroscopy (XAS) shows that Fe is present as Fe{sup 2+} and Fe{sup 3+}. XAS at the Co L{sub 2

Magnetization study of interlayer exchange in semiconductor EuS-PbS ferromagnetic wedge multilayers

International Nuclear Information System (INIS)

Kowalczyk, L.; Osinniy, V.; Chernyshova, M.; Dziawa, P.; Boratynski, A.; Story, T.; Smits, C.J.P.; Swagten, H.J.M.; Sipatov, A.Yu.; Volobuev, V.V.

2006-01-01

Interlayer coupling was experimentally studied in semiconductor EuS-PbS ferromagnetic superlattice wedge structures grown on KCl (0 0 1) substrates with the wedges covering the semiconductor nonmagnetic PbS spacer layer thickness from 0.3 to 6 nm. Structural parameters of the wedges were examined by X-ray diffraction analysis of EuS-PbS superlattice period. Measurements of magnetic hysteresis loops of EuS-PbS structures were performed by both SQUID (for small terminal parts of the wedge) and MOKE (magneto-optical analysis along the wedge) magnetometry. A strong decrease of magnetic remanence and an increase of saturation field observed for EuS-PbS structures with the PbS spacer thickness decreasing below about 1.5 nm is discussed in terms of the influence of antiferromagnetic interlayer coupling

Towards ferromagnet/superconductor junctions on graphene

International Nuclear Information System (INIS)

Pakkayil, Shijin Babu

2015-01-01

Ever since A. Aspect et al. performed the famous 1982 experiment to prove the violation of Bell's inequality, there have been suggestions to conduct the same experiment in a solid state system. Some of those proposals involve superconductors as the source of entangled electron pair and spin depended interfaces as the optical analogue of polariser/filter. Semiconductors can serve as the best medium for such an experiment due to their long relaxation lengths. So far there are no reports on a ferromagnet/superconductor junctions on a semiconductor even though such junctions has been successfully realised in metallic systems. This thesis reports the successful fabrication of ferromagnet/superconductor junction along with characterising measurements in a perfectly two dimensional zero-gap semiconductor known as graphene. Since it's discovery in 2004, graphene has attracted prodigious interest from both academia and industry due to it's inimitable physical properties: very high mobility, high thermal and electrical conductivity, a high Young's modulus and impermeability. Graphene is also expected to have very long spin relaxation length and high spin life time because of it's low spin orbit coupling. For this reason and since researchers are always looking for novel materials and devices to comply with the high demands for better and faster data storage devices, graphene has emanated as a brand new material system for spin based devices. The very first spin injection and detection in graphene was realised in 2007 and ever since, the focal point of the research has been to improve the spin transport properties. A part of this thesis discusses a new fabrication recipe which has a high yield for successfully contacting graphene with a ferromagnet. A high starting yield for ferromagnetic contacts is a irremissible condition for combining superconducting contacts to the device to fabricate ferromagnet/superconductor junctions. Any fabrication recipe

Towards ferromagnet/superconductor junctions on graphene

Energy Technology Data Exchange (ETDEWEB)

Pakkayil, Shijin Babu

2015-07-01

Ever since A. Aspect et al. performed the famous 1982 experiment to prove the violation of Bell's inequality, there have been suggestions to conduct the same experiment in a solid state system. Some of those proposals involve superconductors as the source of entangled electron pair and spin depended interfaces as the optical analogue of polariser/filter. Semiconductors can serve as the best medium for such an experiment due to their long relaxation lengths. So far there are no reports on a ferromagnet/superconductor junctions on a semiconductor even though such junctions has been successfully realised in metallic systems. This thesis reports the successful fabrication of ferromagnet/superconductor junction along with characterising measurements in a perfectly two dimensional zero-gap semiconductor known as graphene. Since it's discovery in 2004, graphene has attracted prodigious interest from both academia and industry due to it's inimitable physical properties: very high mobility, high thermal and electrical conductivity, a high Young's modulus and impermeability. Graphene is also expected to have very long spin relaxation length and high spin life time because of it's low spin orbit coupling. For this reason and since researchers are always looking for novel materials and devices to comply with the high demands for better and faster data storage devices, graphene has emanated as a brand new material system for spin based devices. The very first spin injection and detection in graphene was realised in 2007 and ever since, the focal point of the research has been to improve the spin transport properties. A part of this thesis discusses a new fabrication recipe which has a high yield for successfully contacting graphene with a ferromagnet. A high starting yield for ferromagnetic contacts is a irremissible condition for combining superconducting contacts to the device to fabricate ferromagnet/superconductor junctions. Any fabrication recipe

Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

International Nuclear Information System (INIS)

Riahi, H.; Thevenard, L.; Maaref, M.A.; Gallas, B.; Lemaître, A.; Gourdon, C

2015-01-01

A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO 2 buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO 2 layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO 2 /ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO 2 on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO 2 and ZnO on the ferromagnetic properties of GaMnAs

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

International Nuclear Information System (INIS)

Pandey, R.K.

2008-01-01

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: (1) wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; (2) n-type semiconductors; (3) they exhibit well defined magnetic hysteresis loops and (4) their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A and M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of

Feasibility of introducing ferromagnetic materials to onboard bulk high-Tc superconductors to enhance the performance of present maglev systems

Science.gov (United States)

Deng, Zigang; Wang, Jiasu; Zheng, Jun; Zhang, Ya; Wang, Suyu

2013-02-01

Performance improvement is a long-term research task for the promotion of practical application of promising high-temperature superconducting (HTS) magnetic levitation (maglev) vehicle technologies. We studied the feasibility to enhance the performance of present HTS Maglev systems by introducing ferromagnetic materials to onboard bulk superconductors. The principle here is to make use of the high magnetic permeability of ferromagnetic materials to alter the flux distribution of the permanent magnet guideway for the enhancement of magnetic field density at the position of the bulk superconductors. Ferromagnetic iron plates were added to the upper surface of bulk superconductors and their geometric and positioning effects on the maglev performance were investigated experimentally. Results show that the guidance performance (stability) was enhanced greatly for a particular setup when compared to the present maglev system which is helpful in the application where large guidance forces are needed such as maglev tracks with high degrees of curves.

Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Raju [Department of Electrical and Electronic Engineering, Shahjalal University of Science and Technology, Sylhet 3114 (Bangladesh); Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh); Moslehuddin, A.S.M.; Mahmood, Zahid Hasan [Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh); Hossain, A.K.M. Akther, E-mail: akmhossain@phy.buet.ac.bd [Department of Physics, Bangladesh University of Engineering and Technology, Dhaka 1000 (Bangladesh)

2015-03-15

Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

Energy Technology Data Exchange (ETDEWEB)

Riahi, H., E-mail: hassenriahi1987@gmail.com [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Thevenard, L. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Maaref, M.A. [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Gallas, B. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Lemaître, A. [Laboratoire de Photonique et de Nanostructures – CNRS, Route de Nozay, 91460 Marcoussis (France); Gourdon, C [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France)

2015-12-01

A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO{sub 2} buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO{sub 2} layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO{sub 2}/ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO{sub 2} on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO{sub 2} and ZnO on the ferromagnetic properties of GaMnAs.

Itinerant ferromagnetism in actinide 5 f -electron systems: Phenomenological analysis with spin fluctuation theory

Science.gov (United States)

Tateiwa, Naoyuki; Pospíšil, Jiří; Haga, Yoshinori; Sakai, Hironori; Matsuda, Tatsuma D.; Yamamoto, Etsuji

2017-07-01

We have carried out an analysis of magnetic data in 69 uranium, 7 neptunium, and 4 plutonium ferromagnets with the spin fluctuation theory developed by Takahashi [Y. Takahashi, J. Phys. Soc. Jpn. 55, 3553 (1986), 10.1143/JPSJ.55.3553]. The basic and spin fluctuation parameters of the actinide ferromagnets are determined and the applicability of the spin fluctuation theory to actinide 5 f system has been discussed. Itinerant ferromagnets of the 3 d transition metals and their intermetallics follow a generalized Rhodes-Wohlfarth relation between peff/ps and TC/T0 , viz., peff/ps∝(TC/T0) -3 /2 . Here, ps, peff, TC, and T0 are the spontaneous and effective magnetic moments, the Curie temperature, and the width of spin fluctuation spectrum in energy space, respectively. The same relation is satisfied for TC/T0uranium and neptunium ferromagnets below (TC/T0)kink=0.32 ±0.02 , where a kink structure appears in relation between the two quantities. ps increases more weakly above (TC/T0)kink. A possible interpretation with the TC/T0 dependence of ps is given.

Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy

OpenAIRE

Acbas, G.; Kim, M. -H.; Cukr, M.; Novak, V.; Scarpulla, M. A.; Dubon, O. D.; Jungwirth, T.; Sinova, Jairo; Cerne, J.

2009-01-01

We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. The infrared magneto-optical effects we study arise directly from the spin-splitting of the carrier ...

Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

Science.gov (United States)

Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

2018-03-01

We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

Spin Orbit Torque in Ferromagnetic Semiconductors

KAUST Repository

Li, Hang

2016-06-21

Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read\\' and `write\\' in memory devices can be significantly improved. Hence, the manipulation of electron spin in electronic devices becomes more and more appealing for the advancement of microelectronics. In spin-based devices, the manipulation of ferromagnetic order parameter using electrical currents is a very useful means for current-driven operation. Nowadays, most of magnetic memory devices are based on the so-called spin transfer torque, which stems from the spin angular momentum transfer between a spin-polarized current and the magnetic order parameter. Recently, a novel spin torque effect, exploiting spin-orbit coupling in non-centrosymmetric magnets, has attracted a massive amount of attention. This thesis addresses the nature of spin-orbit coupled transport and torques in non-centrosymmetric magnetic semiconductors. We start with the theoretical study of spin orbit torque in three dimensional ferromagnetic GaMnAs. Using the Kubo formula, we calculate both the current-driven field-like torque and anti-damping-like torque. We compare the numerical results with the analytical expressions in the model case of a magnetic Rashba two-dimensional electron gas. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described. Subsequently we study spin-orbit torques in two dimensional hexagonal crystals such as graphene, silicene, germanene and stanene. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. This thesis then addresses the influence of the quantum spin Hall

High-Temperature Ferromagnetism in Transition Metal Implanted Wide-Bandgap Semiconductors

Science.gov (United States)

2005-07-01

Mn)As and Its Heterostructures,” Acta Physica Polonica A, 94 (2):155–164 (August 1998). 79. Ohno, Y., D. K. Young, B. Beschoten, F. Matsukura, H. Ohno...reactive molecular-beam epitaxy,” Physical Review B , 67 (16):16205 (April 2003). 26. Dietl, T. “From Magnetic Polarons to Ferromagnetism,” Acta Physica ...samples,” Physica B , 308-310 :985–988 (December 2001). 15. Bradley, F. N. Materials for Magnetic Functions (First Edition). New York: Hayden, 1971. 16

Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

Energy Technology Data Exchange (ETDEWEB)

Stollenwerk, Tobias

2013-09-15

In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

International Nuclear Information System (INIS)

Stollenwerk, Tobias

2013-09-01

In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

Half-Metallic Ferromagnetism and Stability of Transition Metal Pnictides and Chalcogenides

Science.gov (United States)

Liu, Bang-Gui

It is highly desirable to explore robust half-metallic ferromagnetic materials compatible with important semiconductors for spintronic applications. A state-of-the-art full potential augmented plane wave method within the densityfunctional theory is reliable enough for this purpose. In this chapter we review theoretical research on half-metallic ferromagnetism and structural stability of transition metal pnictides and chalcogenides. We show that some zincblende transition metal pnictides are half-metallic and the half-metallic gap can be fairly wide, which is consistent with experiment. Systematic calculations reveal that zincblende phases of CrTe, CrSe, and VTe are excellent half-metallic ferromagnets. These three materials have wide half-metallic gaps, are low in total energy with respect to the corresponding ground-state phases, and, importantly, are structurally stable. Halfmetallic ferromagnetism is also found in wurtzite transition metal pnictides and chalcogenides and in transition-metal doped semiconductors as well as deformed structures. Some of these half-metallic materials could be grown epitaxially in the form of ultrathin .lms or layers suitable for real spintronic applications.

An active magnetic bearing with high Tc superconducting coils and ferromagnetic cores

International Nuclear Information System (INIS)

Brown, G.V.; DiRusso, E.; Provenza, A.J.

1996-01-01

A proof-of-feasibility demonstration showed that high-T c , superconductor (HTS) coils can be used in a high-load, active magnetic bearing in LN 2 . A homopolar radial bearing with commercially wound HTS (Bi 2223) bias and control coils produced over 890 N (200 lb) radial load capacity (measured nonrotating) and supported a shaft to 14000 rpm. The goal was to show that HTS coils can operate stably with ferromagnetic cores in a feedback controlled system at a current density similar to that for Cu in LN 2 . The bias coil, wound with nontwisted, multifilament HTS conductor, dissipated negligible power for its direct current. The control coils, wound with monofilament HTS sheathed in Ag, dissipated negligible power for direct current. AC losses increased rapidly with frequency and quadratically with AC amplitude. Above about 2 Hz, the effective resistance of the control coils exceeds that of the silver which is in electrical parallel with the oxide superconductor. These results show that twisted multifilament conductor is not needed for stable levitation but may be desired to reduce control power for sizable dynamic loads

Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

KAUST Repository

Li, Yangyang

2017-12-16

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.

Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

KAUST Repository

Li, Yangyang; Weng, Yakui; Yin, Xinmao; Yu, Xiaojiang; Sarath Kumar, S. R.; Wehbe, Nimer; Wu, Haijun; Alshareef, Husam N.; Pennycook, Stephen J.; Breese, Mark B. H.; Chen, Jingsheng; Dong, Shuai; Wu, Tao

2017-01-01

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.

Room Temperature Ferromagnetic Mn:Ge(001

Directory of Open Access Journals (Sweden)

George Adrian Lungu

2013-12-01

Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

High-Tc superconductor applications

International Nuclear Information System (INIS)

Anon.

1988-01-01

There has been much speculation about new products and business opportunities which high-Tc superconductors might make possible. However, with the exception of one Japanese survey, there have not been any recognized forecasts suggesting a timeframe and relative economic impact for proposed high-Tc products. The purpose of this survey is to provide definitive projections of the timetable for high-Tc product development, based on the combined forecasts of the leading U.S. superconductivity experts. The FTS panel of experts on high-Tc superconductor applications, representing both business and research, forecast the commercialization and economic impact for 28 classes of electronic, magnetic, communications, instrumentation, transportation, industrial, and power generation products. In most cases, forecasts predict the occurrence of developments within a 90% statistical confidence limit of 2-to-3 years. The report provides background information on the 28 application areas, as well as other information useful for strategic planners. The panel also forecast high-Tc research spending, markets, and international competitiveness, and provide insight into how the industry will evolve

Integrating magnetism into semiconductor electronics

Energy Technology Data Exchange (ETDEWEB)

Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

2005-06-30

The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

Integrating magnetism into semiconductor electronics

International Nuclear Information System (INIS)

Zakharchenya, Boris P; Korenev, Vladimir L

2005-01-01

The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

Ab initio calculations of half-metallic ferromagnetism in Cr-doped MgSe and MgTe semiconductors

Energy Technology Data Exchange (ETDEWEB)

Noor, N.A. [Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore (Pakistan); Alay-e-Abbas, S.M. [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan); Department of Physics, GC University Faisalabad, Allama Iqbal Road, Faisalabad 38000 (Pakistan); Sohaib, M.U. [Lahore Development Authority, 54590 Lahore (Pakistan); Ghulam Abbas, S.M. [Department of Chemistry, University of Agriculture, Faisalabad 38040 (Pakistan); Shaukat, A., E-mail: schaukat@gmail.com [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan)

2015-01-15

The full-potential linear-augmented-plane-waves plus local-orbitals (FP-LAPW+lo) method has been employed for investigation of half-metallic ferromagnetism in Cr-doped ordered zinc-blende MgSe and MgTe semiconductors. Calculations of exchange and correlation (XC) effects have been carried out using generalized gradient approximation (GGA) and orbital independent modified Becke–Johnson potential coupled with local (spin) density approximation (mBJLDA). The thermodynamic stability of the compounds and their preferred magnetic orders have been analyzed in terms of the heat of formation and minimum total energy difference in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering, respectively. Calculated electronic properties reveal that the Cr-doping induces ferromagnetism in MgSe and MgTe which gives rise to a half-metallic (HM) gap at Fermi level (E{sub F}). Further, the electronic band structure is discussed in terms of s (p)–d exchange constants that are consistent with typical magneto-optical experiment and the behavior of charge spin densities is presented for understanding the bonding nature. Our results demonstrate that the higher effective potential for the spin-down case is responsible for p–d exchange splitting. Total magnetic moment (mainly due to Cr-d states) of these compounds is 4µ{sub B}. Importantly, the electronic properties and HM gap obtained using mBJLDA show remarkable improvement as compared to the results obtained using standard GGA functional. - Highlights: • Spin effect theoretical study on Cr-doped MgSe and MgTe is performed. • Half-metallic ferromagnetism in Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te is established. • Results of WC-GGA and mBJLDA are compared for performance. • HM gaps for Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te show nonlinear variation with x. • Important values of exchange splitting/constants and moments are reported.

High Tc superconducting magnetic multivibrators for fluxgate magnetic-field sensors

International Nuclear Information System (INIS)

Mohri, K.; Uchiyama, T.; Ozeki, A.

1989-01-01

Sensitive and quick-response nonlinear inductance characteristics are found for high Tc superconducting (YBa 2 Cu 3 O 7-chi ) disk cores at 77K in which soft magnetic BH hysteresis loops are observed. Various quick response magnetic devices such as modulators, amplifiers and sensors are built using these cores. The magnetizing frequency can be set to more than 20 MHz, which is difficult for conventional ferromagnetic bulk materials such as Permalloy amorphous alloys and ferrite. New quick-response fluxgate type magnetic-field sensors are made using ac and dc voltage sources. The former is used for second-harmonic type sensors, while the latter is for voltage-output multivibrator type sensors. Stable and quick-response sensor characteristics were obtained for two-core type multivibrators

Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

Science.gov (United States)

Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

2018-04-01

The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

Room-temperature ferromagnetic transitions and the temperature dependence of magnetic behaviors in FeCoNiCr-based high-entropy alloys

Science.gov (United States)

Na, Suok-Min; Yoo, Jin-Hyeong; Lambert, Paul K.; Jones, Nicholas J.

2018-05-01

High-entropy alloys (HEAs) containing multiple principle alloying elements exhibit unique properties so they are currently receiving great attention for developing innovative alloy designs. In FeCoNi-based HEAs, magnetic behaviors strongly depend on the addition of alloying elements, usually accompanied by structural changes. In this work, the effect of non-magnetic components on the ferromagnetic transition and magnetic behaviors in equiatomic FeCoNiCrX (X=Al, Ga, Mn and Sn) HEAs was investigated. Alloy ingots of nominal compositions of HEAs were prepared by arc melting and the button ingots were cut into discs for magnetic measurements as functions of magnetic field and temperature. The HEAs of FeCoNiCrMn and FeCoNiCrSn show typical paramagnetic behaviors, composed of solid solution FCC matrix, while the additions of Ga and Al in FeCoNiCr exhibit ferromagnetic behaviors, along with the coexistence of FCC and BCC phases due to spinodal decomposition. The partial phase transition in both HEAs with the additions of Ga and Al would enhance ferromagnetic properties due to the addition of the BCC phase. The saturation magnetization for the base alloy FeCoNiCr is 0.5 emu/g at the applied field of 20 kOe (TC = 104 K). For the HEAs of FeCoNiCrGa and FeCoNiCrAl, the saturation magnetization significantly increased to 38 emu/g (TC = 703 K) and 25 emu/g (TC = 277 K), respectively. To evaluate the possibility of solid solution FCC and BCC phases in FeCoNiCr-type HEAs, we introduced a parameter of valence electron concentration (VEC). The proposed rule for solid solution formation by the VEC was matched with FeCoNiCr-type HEAs.

Room temperature ferromagnetism in magic-sized Cr-doped CdS diluted magnetic semiconducting quantum dots

International Nuclear Information System (INIS)

Srivastava, Punita; Kumar, Pushpendra; Singh, Kedar

2011-01-01

Manipulation of carrier spins in semiconductors for spintronics applications has received great attention driven by improved functionalities and higher speed operation. Doping of semiconductor nanocrystals by transition-metal ions pronounced as diluted magnetic semiconductors (DMS) has attracted tremendous attention. Such doping is, however, difficult to achieve in low-dimensional strongly quantum-confined nanostructures by conventional growth procedures. In the present case, magic-sized, pure, and Cr-doped CdS DM-QDs have been synthesized by solution phase chemistry (lyothermal method). Structural, optical, and magnetic investigation suggest an intrinsic nature of ferromagnetism with highly quantum-confined system. Optical and magnetic results of pure and doped QDs reveal major physical consequences of dopant localization within the capacity to engineer dopant-carrier exchange interactions introducing magnetic functionalities within the host semiconductor lattice. Unpaired Cr ions in Cd substitutional sites could create spin ordering and ferromagnetic coupling. The results presented herein illustrate some of the remarkable and unexpected complexities that can arise in doped QDs.

Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts

DEFF Research Database (Denmark)

Hu, C.-M.; Nitta, Junsaku; Jensen, Ane

2001-01-01

Ferromagnetic contacts on a high-mobility, two-dimensional electron gas (2DEG) in a narrow gap semiconductor with strong spin-orbit interaction are used to investigate spin-polarized electron transport. We demonstrate the use of magnetized contacts to preferentially inject and detect specific spi...

Ba2NiOsO6 : A Dirac-Mott insulator with ferromagnetism near 100 K

International Nuclear Information System (INIS)

Feng, Hai L.; Calder, Stuart

2016-01-01

In this study, the ferromagnetic semiconductor Ba 2 NiOsO 6 (T mag ~ 100 K) was synthesized at 6 GPa and 1500 °C. It crystallizes into a double perovskite structure [Fm - 3m; a = 8.0428 (1) Å], where the Ni 2+ and Os 6+ ions are perfectly ordered at the perovskite B site. We show that the spin-orbit coupling of Os 6+ plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a > 21 kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te (T mag < 180 K), the spin-gapless semiconductor Mn 2 CoAl (T mag ~ 720 K), and the ferromagnetic insulators EuO (T mag ~ 70 K) and Bi 3 Cr 3 O 11 (T mag ~ 220 K). It is also qualitatively different from known ferrimagnetic insulators and semiconductors, which are characterized by an antiparallel spin arrangement. Our finding of the ferromagnetic semiconductivity of Ba 2 NiOsO 6 should increase interest in the platinum group oxides, because this alternative class of materials should be useful in the development of spintronic, quantum magnetic, and related devices.

Injection of spin-polarized current into semiconductor

International Nuclear Information System (INIS)

Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

2003-01-01

A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

The Goettingen high-Tc superconductivity research pool: the effects of structure and structural defects on the performance of high-Tc superconductors. Final reports

International Nuclear Information System (INIS)

1992-02-01

The compilation presents the final reports prepared by the various teams of the Goettingen research pool for high-Tc superconductivity. The reports are entitled: Structure and phase transition in high-Tc superconductors (Krebs/Freyhardt). Preparation and critical properties of high-Tc superconductors (Freyhardt/Heinemann/Zimmermann). EMC measurements in high-Tc superconductors (Bormann/Noelting). Phase analysis of the various phases observed in the preparation of high-Tc superconductors (Faupel/Hehenkamp). Positron annihilation in high-Tc superconductors (Hehenkamp). Preparation and characterization of thin films consisting of superconducting oxide ceramics (v. Minnigerode/Samwer). High-Tc superconductivity in monocrystals (Winzer/Beuermann). Microwave conductivity in high-Tc superconductors (Helberg). High-resolution structural analyses in high-Tc superconductors (Kupcik/Bente). Synthesis, structural analyses and spectroscopy of high-Tc superconductors (Bente). Synthesis, monocrystal growing, crystal structure of high-Tc superconductors (Schwarzmann). Ion-beam-aided studies in high-Tc superconductors (Uhrmacher). (orig./MM) [de

Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

Science.gov (United States)

Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

2017-01-01

Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

Science.gov (United States)

Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

2016-04-01

X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

Understanding the Room Temperature Ferromagnetism in GaN Nanowires with Pd Doping

International Nuclear Information System (INIS)

Manna, S; De, S K

2011-01-01

We report the first synthesis and characterization of 4d transition metal palladium-doped GaN nanowires (NWs). Room temperature ferromagnetism has been observed in high quality Vapor Liquid Solid (VLS) epitaxy grown undoped n-type GaN nanowires. It was proposed that this type of magnetism is due to defects which are not observed in Bulk GaN because of large formation energy of defects in bulk GaN. Here we have successfully doped 4d transition metal Pd in GaN NWs. We find fairly strong and long-range ferromagnetic coupling between Pd substituted for Ga in GaN . The results suggest that 4d metals such as Pd may also be considered as candidates for ferromagnetic dopants in semiconductors.

Dimensionality Driven Enhancement of Ferromagnetic Superconductivity in URhGe

Science.gov (United States)

Braithwaite, Daniel; Aoki, Dai; Brison, Jean-Pascal; Flouquet, Jacques; Knebel, Georg; Nakamura, Ai; Pourret, Alexandre

2018-01-01

In most unconventional superconductors, like the high-Tc cuprates, iron pnictides, or heavy-fermion systems, superconductivity emerges in the proximity of an electronic instability. Identifying unambiguously the pairing mechanism remains nevertheless an enormous challenge. Among these systems, the orthorhombic uranium ferromagnetic superconductors have a unique position, notably because magnetic fields couple directly to ferromagnetic order, leading to the fascinating discovery of the reemergence of superconductivity in URhGe at a high field. Here we show that uniaxial stress is a remarkable tool allowing the fine-tuning of the pairing strength. With a relatively small stress, the superconducting phase diagram is spectacularly modified, with a merging of the low- and high-field superconducting states and a significant enhancement of the superconductivity. The superconducting critical temperature increases both at zero field and under a field, reaching 1 K, more than twice higher than at ambient pressure. This enhancement of superconductivity is shown to be directly related to a change of the magnetic dimensionality detected from an increase of the transverse magnetic susceptibility: In addition to the Ising-type longitudinal ferromagnetic fluctuations, transverse magnetic fluctuations also play an important role in the superconducting pairing.

Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

Directory of Open Access Journals (Sweden)

Yu-Jun Zhang

2015-07-01

Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

Magnetic and electronic properties of half-metallic ferromagnetic Mn-stabilised zirconia

Energy Technology Data Exchange (ETDEWEB)

Maznichenko, Igor; Daene, Markus; Hergert, Wolfram; Mertig, Ingrid [Martin-Luther-Univ. Halle-Wittenberg, Inst. Phys., 06099 Halle (Germany); Ernst, Arthur; Ostanin, Sergey; Sandratskii, Leonid; Bruno, Patrick [Max-Planck-Inst. Mikrostrukturphys., Weinberg 2, 06120 Halle (Germany); Bergqvist, Lars [Dept. Phys., Uppsala Univ., Box 530, 751 21 Uppsala (Sweden); Hughes, Ian; Staunton, Julie [Dept. Phys., Univ. Warwick, Coventry CV4 7AL (United Kingdom); Kudrnovsky, Josef [Max-Planck-Inst. Mikrostrukturphys., Weinberg 2, 06120 Halle (Germany); Inst. Phys., Acad. Sci. of the Czech Republic, Na Slovance 2, 18221 Prague (Czech Republic)

2007-07-01

The investigations of the manganese stabilised cubic zirconia (Mn-SZ) show that this dilute magnetic semiconductors possess unique magnetic properties. Based on ab-initio electronic structure calculations which include the effects of thermally excited magnetic fluctuations, the autors predict Mn-SZ to be ferromagnetic for a wide range of Mn concentration up to high T{sub C}. It was found that this material, which is well known both as a diamond imitation and as a catalyst, is halfmetallic with majority and minority spin states of the Mn impurities lying in the wide band gap of zirconia. The high T{sub C} ferromagnetism is robust against oxygen vacancies and against the distribution of Mn impurities on the Zr fcc sublattice. This work responds to the question concerning the key electronic and structure factors behind an optimal doping. The autors propose this stable half-metallic ferromagnet to be a promising candidate for future spintronics applications.

Ferromagnetism in Gd doped ZnO nanowires: A first principles study

KAUST Repository

Aravindh, S. Assa

2014-12-19

In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn 48O48 nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high TC in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

Ferromagnetism in Gd doped ZnO nanowires: A first principles study

KAUST Repository

Aravindh, S. Assa; Schwingenschlö gl, Udo; Roqan, Iman S.

2014-01-01

In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn 48O48 nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high TC in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

High Tc Superconducting Magnet Excited by a Semiconductor Thermoelectric Element

Science.gov (United States)

Kuriyama, T.; Ono, M.; Tabe, S.; Oguchi, A.; Okamura, T.

2006-04-01

A high Tc superconducting (HTS) magnet excited by a thermal electromotive force of a thermoelectric element is studied. This HTS magnet has the advantages of compactness, lightweight and continuous excitation in comparison with conventional HTS magnets, because this HTS magnet does not need a large external power source. In this system, a heat input into the cryogenic environment is necessary to excite the thermoelectric element for constant operation. This heat generation, however, causes a rise in temperature of an HTS coil and reduces the system performance. In this paper, a newly designed magnet system which adopted a two-stage GM cryocooler was investigated. It enabled us to control the temperature of a thermoelectric element and that of an HTS coil independently. The temperature of the HTS coil could be kept at 10-20 K at the second stage of the GM cryocooler, while the thermoelectric element could be excited at higher temperature in the range of 50-70 K at the first stage, where the performance of the thermoelectric element was higher. The experimental results on this HTS magnet are shown and the possibility of the thermoelectric element as a main power source of the HTS magnets is discussed.

Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

Energy Technology Data Exchange (ETDEWEB)

Winter, Andreas

2009-07-23

Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

Directory of Open Access Journals (Sweden)

P. A. Bhobe

2015-10-01

Full Text Available Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K_{2}Cr_{8}O_{16}, which exhibits a temperature-dependent (T-dependent paramagnetic-to-ferromagnetic-metal transition at T_{C}=180  K and transforms into a ferromagnetic insulator below T_{MI}=95  K. We observe clear T-dependent dynamic valence (charge fluctuations from above T_{C} to T_{MI}, which effectively get pinned to an average nominal valence of Cr^{+3.75} (Cr^{4+}∶Cr^{3+} states in a 3∶1 ratio in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T-dependent BCS-type energy gap, with 2G(0∼3.5(k_{B}T_{MI}∼35  meV. First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U∼4  eV, establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d-electrons/Cr and the half-metallic ferromagnetism in the t_{2g} up-spin band favor a low-energy Peierls metal-insulator transition.

Nonmonotonic critical temperature in superconductor ferromagnet bilayers

NARCIS (Netherlands)

Fominov, Ya. V.; Fominov, I.V.; Chtchelkatchev, N.M.; Golubov, Alexandre Avraamovitch

2002-01-01

The critical temperature Tc of a superconductor/ferromagnet (SF) bilayer can exhibit nonmonotonic dependence on the thickness df of the F layer. SF systems have been studied for a long time; according to the experimental situation, a ¿dirty¿ limit is often considered which implies that the mean free

Structure and magnetism of transition-metal implanted dilute magnetic semiconductors

CERN Document Server

Pereira, Lino; Temst, K; Araújo, JP; Wahl, U

The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics. Among the many types of DMS materials which have been investigated, the current research interest can be narrowed down to two main classes of materials: (1) narrow-gap III-V semiconductors, mostly GaAs and InAs, doped with Mn; (2) wide-gap oxides and nitrides doped with 3d transition metals, mostly Mn- and Co-doped ZnO and Mn-doped GaN. With a number of interesting functionalities deriving from the carrier-mediated ferromagnetism and demonstrated in various proof-of-concept devices, Mn-doped GaAs has become, among DMS materials, one of the best candidates for technological application. However, despite major developments over the last 15 years, the maximum Curie temperature (185 K) remains well below room temperature. On the other hand, wide-gap DMS materials appear to exhibit ferromagnetic behavior...

Conductus makes high-Tc integrated circuit

International Nuclear Information System (INIS)

Anon.

1991-01-01

This paper reports that researchers at Conductus have successfully demonstrated what the company says is the world's first integrated circuit containing active devices made from high-temperature superconductors. The circuit is a SQUID magnetometer made from seven layers of material: three layers of yttrium-barium-copper oxide, two layers of insulating material, a seed layer to create grain boundaries for the Josephson junctions, and a layer of silver for making electrical contact to the device. The chip also contains vias, or pathways that make a superconducting contact between the superconducting layers otherwise separated by insulators. Conductus had previously announced the development of a SQUID magnetometer that featured a SQUID sensor and a flux transformer manufactured on separate chips. What makes this achievement important is that the company was able to put both components on the same chip, thus creating a simple integrated circuit on a single chip. This is still a long way from conventional semiconductor technology, with as many as a million components per chip, or even the sophisticated low-Tc superconducting chips made by the Japanese, but the SQUID magnetometer demonstrates all the elements and techniques necessary to build more complex high-temperature superconductor integrated circuits, making this an important first step

Griffiths-like phase in high TC perovskite La2FeReO6 prepared in a controlled reducing atmosphere

Science.gov (United States)

Kaipamagalath, Aswathi; Palakkal, Jasnamol P.; Varma, Manoj R.

2018-05-01

The perovskite La2FeReO6 is prepared by solid-state reaction method. Calcination was done in a controlled reducing atmosphere. The structure of the compound is found to be orthorhombic with Pbnm space group. From the DC magnetic studies, the transition temperature (TC) of La2FeReO6 is found to be at 729 K. A Griffiths-like phase is present in the material with ferromagnetic short-range correlations above TC up to the Griffiths temperature TG = 863 K.

Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces

Science.gov (United States)

Gastaldo, Daniele; Conta, Gianluca; Coïsson, Marco; Amato, Giampiero; Tiberto, Paola; Allia, Paolo

2018-05-01

A method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were characterized in situ by reflection high-energy electron diffraction. The quantum dots density and equivalent radius were extracted from field emission scanning electron microscope pictures, obtained ex-situ. Magnetic characterizations were performed by superconducting quantum interference device vibrating sample magnetometry revealing that ferromagnetic order is maintained up to room temperature: two different ferromagnetic phases were identified by the analysis of the field cooled - zero field cooled measurements.

New superconductors from granular to high T$_{c}$

CERN Document Server

Deutscher, Guy

2018-01-01

How new are the high Tc superconductors, as compared to the conventional low Tc ones? In what sense are these oxides different from regular metals in their normal state? How different is the mechanism for high Tc superconductivity from the well-known electron-phonon interaction that explains so well superconductivity in metals and alloys? What are the implications of the new features of the high Tc oxides for their practical applications? This interesting book aims to provide some answers to those questions, drawing particularly on similarities between the high Tc oxides and granular superconductors, which also present a short coherence length, a small superfluid density and an inhomogeneous structure.

New superconductors from granular to high T$_{c}$

CERN Document Server

Deutscher, Guy

2006-01-01

How new are the high Tc superconductors, as compared to the conventional low Tc ones? In what sense are these oxides different from regular metals in their normal state? How different is the mechanism for high Tc superconductivity from the well-known electron-phonon interaction that explains so well superconductivity in metals and alloys? What are the implications of the new features of the high Tc oxides for their practical applications? This book aims to give some answers to those questions, drawing particularly on similarities between the high Tc oxides and granular superconductors, which also present a maximum of their critical temperature near the metal-insulator transition.

Electrical detection of spin transport in lateral ferromagnet-semiconductor devices

Science.gov (United States)

Lou, Xiaohua

2007-03-01

A fully electrical scheme of spin injection, transport, and detection in a single ferromagnet-semiconductor structure has been a long-standing goal in the field of spintronics. In this talk, we report on an experimental demonstration of such a scheme. The devices are fabricated from epitaxial Fe/GaAs (100) heterostructures with highly doped GaAs as a Schottky tunnel barrier. A set of closely spaced Fe contacts on the top of an n-GaAs channel are used as spin injectors and detectors. Reference electrodes are placed at the far ends of the channel, allowing for non-local spin detection [1]. The electro-chemical potential of the detector is sensitive to the relative magnetizations of the injector and detector. In spin-valve measurements, a magnetic field is applied along the Fe easy axis to switch the relative magnetizations of injector and detector from parallel to antiparallel, resulting in a voltage jump that is proportional to the non-equilibrium spin polarization in the channel. A more rigorous test of electrical spin detection is the observation of the Hanle effect, in which an out-of-plane magnetic field is used to modulate and dephase the spin polarization in the channel. The magnitudes of the observed Hanle curves agree with the results of the spin-valve measurements. The dependence of the Hanle curves on temperature and contact separation is studied in detail and is consistent with a drift-diffusion model incorporating spin precession and relaxation. The spin polarization generated by spin injection (reverse bias at the injector) or spin accumulation (forward bias at the injector) is measured using the magneto-optical Kerr effect and is found to be in good agreement with the spin-dependent non-local voltage. Both the transport and optical measurements show a non-linear relationship between the bias voltage at the injector and the spin polarization in the channel. [1] M. Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).

Manipulation of incoherent and coherent spin ensembles in diluted magnetic semiconductors via ferromagnetic fringe fields; Manipulation inkohaerenter und kohaerenter Spinensembles in verduennt-magnetischen Halbleitern mittels ferromagnetischer Streufelder

Energy Technology Data Exchange (ETDEWEB)

Halm, Simon

2009-05-19

In this thesis it is demonstrated that fringe fields of nanostructured ferromagnets provide the opportunity to manipulate both incoherent and coherent spin ensembles in a dilute magnetic semiconductor (DMS). Fringe fields of Fe/Tb ferromagnets with a remanent out-of-plane magnetization induce a local magnetization in a (Zn,Cd,Mn)Se DMS. Due to the sp-d exchange interaction, optically generated electron-hole pairs align their spin along the DMS magnetization. One obtains a local, remanent spin polarization which was probed by spatially resolved, polarization sensitive photoluminescence spectroscopy. Fringe fields from in-plane magnetized Co ferromagnets allow to locally modify the precession frequency of the Manganese magnetic moments of the DMS in an external magnetic field. This was probed by time-resolved Kerr rotation technique. The inhomogeneity of the fringe field leads to a shortening of the ensemble decoherence time and to the effect of a time-dependent ensemble precession frequency. (orig.)

Room temperature ferromagnetism in Fe-doped semiconductor ZrS2 single crystals

Science.gov (United States)

Muhammad, Zahir; Lv, Haifeng; Wu, Chuanqiang; Habib, Muhammad; Rehman, Zia ur; Khan, Rashid; Chen, Shuangming; Wu, Xiaojun; Song, Li

2018-04-01

Two dimensional (2D) layered magnetic materials have obtained much attention due to their intriguing properties with a potential application in the field of spintronics. Herein, room-temperature ferromagnetism with 0.2 emu g‑1 magnetic moment is realized in Fe-doped ZrS2 single crystals of millimeter size, in comparison with diamagnetic behaviour in ZrS2. The electron paramagnetic resonance spectroscopy reveals that 5.2wt% Fe-doping ZrS2 crystal exhibit high spin value of g-factor about 3.57 at room temperature also confirmed this evidence, due to the unpaired electrons created by doped Fe atoms. First principle static electronic and magnetic calculations further confirm the increased stability of long range ferromagnetic ordering and enhanced magnetic moment in Fe-doped ZrS2, originating from the Fe spin polarized electron near the Fermi level.

Uniaxial ferromagnetism of local uranium moments in hexagonal UBeGe

Science.gov (United States)

Gumeniuk, Roman; Yaresko, Alexander N.; Schnelle, Walter; Nicklas, Michael; Kvashnina, Kristina O.; Hennig, Christoph; Grin, Yuri; Leithe-Jasper, Andreas

2018-05-01

The new intermetallic uranium beryllium germanide UBeGe and its thorium analogon ThBeGe crystallize with the hexagonal ZrBeSi type of structure. Studies of magnetic, thermal, and transport properties were performed on polycrystalline samples between 1.8 and 750K. UBeGe is a uniaxial ferromagnet and there are indications for two magnetic transitions at TC(1 )≈160 K and TC(2 )≈150 K . The high paramagnetic effective moment μeff≈3.1 μB , x-ray absorption near-edge spectroscopy (XANES, 17-300 K), as well as theoretical DFT calculations indicate localized U 5 f2 states in UBeGe. ThBeGe is a diamagnetic metallic material with low density of states at the Fermi level.

Above room-temperature ferromagnetism in La1-xCaxMnO3 epitaxial thin films on SrTiO3(001) substrates

Science.gov (United States)

Kou, Yunfang; Wang, Hui; Miao, Tian; Wang, Yanmei; Xie, Lin; Wang, Shasha; Liu, Hao; Lin, Hanxuan; Zhu, Yinyan; Wang, Wenbin; Du, Haifeng; Pan, Xiaoqing; Wu, Ruqian; Yin, Lifeng; Shen, Jian

The colossal magnetoresistive (CMR) manganites are popular materials for spintronics applications due to their high spin polarization. Only a couple of manganites like La1-xSrxMnO3 have a Curie temperature (Tc) that is higher than room temperature. Finding methods to raise the Tc of manganites over room temperature is useful but challenging. In this work, we use the most intensively studied La1-xCaxMnO3 (LCMO) as the prototype system to demonstrate that Tc can be greatly enhanced by carefully tuning the electronic structure using doping and strain. Specifically, we grow LCMO films on SrTiO3 (001) substrates using pulsed laser deposition. Magnetic and transport measurements indicate a great enhancement of Tc over room temperature at x =0.2 doping. Theoretical calculations indicate that the combined effects from doping and strain give rise to a new electronic structure favoring ferromagnetism in LCMO system. Furthermore, using the La0.8Ca0.2MnO3 as ferromagnetic electrodes, we achieve finite tunneling magnetoresistance (TMR) above room temperature.

Proximity effect in superconductor/ferromagnet hetero-structures as a function of interface properties

Science.gov (United States)

Sarmiento, Julio; Patino, Edgar J.

2014-03-01

Superconductor/ferromagnet heterostructures are currently a subject of strong research due to novel phenomena resulting from the proximity effect. Among the most investigated ones are the oscillations of the critical temperature as function of the ferromagnet thickness. The oscillatory behavior of Tc is theoretically explained as to be result of the generation of the FFLO (Fulde-Ferrel-Larkin-Ovchinnikov) state of Cooper pairs under the presence of the exchange field of the ferromagnet. With the advancement of experimental techniques for S/F bilayers growth new questions regarding the effect of the interface transparency can to be addressed. For instance the influence of the interface roughness on the proximity effect. For studying this phenomenon Nb/Co and Nb/Cu/Co samples were sputtered on SiO2 substrates with different roughness. Characterization of these samples show a significant variation of Tc with the interface roughness. This results point towards a possible relationship between transparency and roughness of the interface. Proyecto Semilla Facultad de Ciencias Universidad de los Andes.

Pressure and high-Tc superconductivity in sulfur hydrides.

Science.gov (United States)

Gor'kov, Lev P; Kresin, Vladimir Z

2016-05-11

The paper discusses fundamentals of record-TC superconductivity discovered under high pressure in sulfur hydride. The rapid increase of TC with pressure in the vicinity of Pcr ≈ 123GPa is interpreted as the fingerprint of a first-order structural transition. Based on the cubic symmetry of the high-TC phase, it is argued that the lower-TC phase has a different periodicity, possibly related to an instability with a commensurate structural vector. In addition to the acoustic branches, the phonon spectrum of H3S contains hydrogen modes with much higher frequencies. Because of the complex spectrum, usual methods of calculating TC are here inapplicable. A modified approach is formulated and shown to provide realistic values for TC and to determine the relative contributions of optical and acoustic branches. The isotope effect (change of TC upon Deuterium for Hydrogen substitution) originates from high frequency phonons and differs in the two phases. The decrease of TC following its maximum in the high-TC phase is a sign of intermixing with pairing at hole-like pockets which arise in the energy spectrum of the cubic phase at the structural transition. On-pockets pairing leads to the appearance of a second gap and is remarkable for its non-adiabatic regime: hydrogen mode frequencies are comparable to the Fermi energy.

Transport measurements in superconductors: critical current of granular high TC ceramic superconductor samples

International Nuclear Information System (INIS)

Passos, W.A.C.

2016-01-01

This work presents a method to obtain critical current of granular superconductors. We have carried out transport measurements (ρxT curves and VxI curves) in a YBa_2Cu_3O_7_-_δ sample to determine critical current density of it. Some specimens reveal a 'semiconductor-like' behavior (electrical resistivity decreases with increasing temperatures above critical temperature T_c of material) competing with superconductor behavior. Due to high granular fraction of the sample, these competition is clearly noted in ρxT curves. Measurements carried out from 0 to 8500 Oe of applied field show the same behavior, and the critical current density of the samples is shown. (author)

A primary exploration to quasi-two-dimensional rare-earth ferromagnetic particles: holmium-doped MoS2 sheet as room-temperature magnetic semiconductor

Science.gov (United States)

Chen, Xi; Lin, Zheng-Zhe

2018-05-01

Recently, two-dimensional materials and nanoparticles with robust ferromagnetism are even of great interest to explore basic physics in nanoscale spintronics. More importantly, room-temperature magnetic semiconducting materials with high Curie temperature is essential for developing next-generation spintronic and quantum computing devices. Here, we develop a theoretical model on the basis of density functional theory calculations and the Ruderman-Kittel-Kasuya-Yoshida theory to predict the thermal stability of two-dimensional magnetic materials. Compared with other rare-earth (dysprosium (Dy) and erbium (Er)) and 3 d (copper (Cu)) impurities, holmium-doped (Ho-doped) single-layer 1H-MoS2 is proposed as promising semiconductor with robust magnetism. The calculations at the level of hybrid HSE06 functional predict a Curie temperature much higher than room temperature. Ho-doped MoS2 sheet possesses fully spin-polarized valence and conduction bands, which is a prerequisite for flexible spintronic applications.

Equivalence of the O( n) vector ferromagnetic and antiferromagnetic models

Science.gov (United States)

Sousa, J. Ricardo de

The effective-field renormalization group (EFRG) approach is used to find the Néel temperature ( TN) of the O( n) vector model with antiferromagnetic (AF) interaction. The EFRG method is illustrated by employing approximations in which clusters with one ( N‧=1) and two ( N=2) spins are used. The critical temperature TN is obtained as a function of component ( n) and coordination ( z) numbers. For all values of n and z we show that TN= Tc, where Tc is the Curie temperature for the ferromagnetic (F) case. As a comparison, the results of the quantum Heisenberg model ( n=3) with F and AF interactions are also presented, and we find that TN> Tc, which is different from the classical result Tc= TN.

Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications

Science.gov (United States)

Nie, Tianxiao; Tang, Jianshi; Wang, Kang L.

2015-09-01

In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

Czech Academy of Sciences Publication Activity Database

Haigh, J.A.; Ciccarelli, C.; Betz, A.C.; Irvine, A.; Novák, Vít; Jungwirth, Tomáš; Wunderlich, Joerg

2015-01-01

Roč. 91, č. 14 (2015), , "140409-1"-"140409-5" ISSN 1098-0121 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : ferromagnetic semiconductors * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

Rise and fall of ferromagnetism in O-irradiated Al2O3 single crystals

International Nuclear Information System (INIS)

Li, Qiang; Xu, Juping; Liu, Jiandang; Du, Huaijiang; Ye, Bangjiao

2015-01-01

In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al 2 O 3 single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al 2 O 3 crystal and form stable V Al -V Al ferromagnetic coupling at room temperature

Magnetic anisotropy and magnetization switching in ferromagnetic GaMnAs

Energy Technology Data Exchange (ETDEWEB)

Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

2007-07-01

Characteristic features of semiconductor spintronics such as the anisotropic magnetoresistance or the spin-polarization of charge carriers are intimately connected with the macroscopic magnetization in a ferromagnetic semiconductor. The orientation of the magnetization is controlled by magnetic anisotropy which predominantly ar ises from crystal symmetry, sample geometry, and strain. A detailed knowledge of this anisotropy is indispensable for the design of novel spintronic devices. In this talk, angle-dependent magnetotransport is demonstrated to be an excellent tool for probing magnetic anisotropy as an alternative to the standard ferromagnetic-resonance method. Moreover, its ability to trace the movement of the magnetization vector in a variable external magnetic field makes it ideally suitable f or studying magnetization switching, a potential basic effect in future logical devices. Experimental data recorded from a variety of different GaMnAs samples a re analyzed by means of model calculations which are based on a series expansion of the resistivity tensor, a numerical minimization of the free enthalpy with respect to the magnetization orientation, and the assumption that the GaMnAs laye rs under study consist of single ferromagnetic domains.

Systematic study of the spin stiffness dependence on phosphorus alloying in the ferromagnetic semiconductor (Ga,Mn)As

International Nuclear Information System (INIS)

Shihab, S.; Thevenard, L.; Bardeleben, H. J. von; Gourdon, C.; Riahi, H.; Lemaître, A.

2015-01-01

We study the dependence of the spin stiffness constant on the phosphorus concentration in the ferromagnetic semiconductor (Ga,Mn)(As,P) with the aim of determining whether alloying with phosphorus is detrimental, neutral, or advantageous to the spin stiffness. Time-resolved magneto-optical experiments are carried out in thin epilayers. Laser pulses excite two perpendicular standing spin wave modes, which are exchange related. We show that the first mode is spatially uniform across the layer corresponding to a k≈0 wavevector. From the two frequencies and k-vector spacings we obtain the spin stiffness constant for different phosphorus concentrations using weak surface pinning conditions. The mode assessment is checked by comparison to the spin stiffness obtained from domain pattern analysis for samples with out-of-plane magnetization. The spin stiffness is found to exhibit little variation with phosphorus concentration in contradiction with ab-initio predictions

Giant proximity effect in ferromagnetic bilayers

Science.gov (United States)

Ramos, Silvia; Charlton, Tim; Quintanilla, Jorge; Suter, Andreas; Moodera, Jagadeesh; Prokscha, Thomas; Salman, Zaher; Forgan, Ted

2013-03-01

The proximity effect is a phenomenon where an ordered state leaks from a material into an adjacent one over some finite distance, ξ. For superconductors, this distance is ~ the coherence length. Nevertheless much longer-range, ``giant'' proximity effects have been observed in cuprate junctions. This surprising effect can be understood as a consequence of critical opalescence. Since this occurs near all second order phase transitions, giant proximity effects should be very general and, in particular, they should be present in magnetic systems. The ferromagnetic proximity effect has the advantage that its order parameter (magnetization) can be observed directly. We investigate the above phenomenon in Co/EuS bilayer films, where both materials undergo ferromagnetic transitions but at rather different temperatures (bulk TC of 1400K for Co and 16.6K for EuS). A dramatic increase in the range of the proximity effect is expected near the TC of EuS. We present the results of our measurements of the magnetization profiles as a function of temperature, carried out using the complementary techniques of low energy muon rotation and polarized neutron reflectivity. Work supported by EPSRC, STFC and ONR grant N00014-09-1-0177 and NSF grant DMR 0504158.

Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

Science.gov (United States)

Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

2011-08-23

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Spin-polarized investigation of ferromagnetism on magnetic semiconductors MnxCa1−xS in the rock-salt phase

International Nuclear Information System (INIS)

Choutri, H.; Ghebouli, M.A.; Ghebouli, B.; Bouarissa, N.; Uçgun, E.; Ocak, H.Y.

2014-01-01

The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors Mn x Ca 1−x S in the rock-salt phase have been investigated using first-principles calculations with both LDA and LDA + U functional. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of Mn x Ca 1−x S is 4.4μ B and 4.5μ B for LDA and LDA + U functional and is independent of the Mn concentration. The unfilled Mn-3d levels reduce the local magnetic moment of Mn from its free space charge value of 5μ B –4.4μ B and4.5μ B for LDA and LDA + U functional due to 3p–3d hybridization. - Highlights: • Fundamental properties of magnetic semiconductors Mn x Ca 1−x S. • Rock-salt phase of Mn x Ca 1−x S. • Magnetic properties of the diluted magnetic semiconductors Mn x Ca 1−x S. • The use of LDA + U functionals

Interplay of dopants and defects in making Cu doped TiO{sub 2} nanoparticle a ferromagnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Choudhury, Biswajit, E-mail: biswa.tezu@gmail.com [Department of Physics, Tezpur University, Napaam 784028, Assam (India); Choudhury, Amarjyoti [Department of Physics, Tezpur University, Napaam 784028, Assam (India); Borah, Debajit [Department of Chemical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, Assam (India)

2015-10-15

Here we have studied the role of oxygen defects and Cu dopants on ferromagnetism in Cu doped TiO{sub 2} nanoparticles with nominal Cu concentration of 2%, 4% and 6 mol%. Electron paramagnetic resonance (EPR) spectra analysis reveals the presence of Cu{sup 2+} in the distorted octahedral coordination of TiO{sub 2}. Cu d-states undergo strong p-d coupling with the valence band O 2p state of TiO{sub 2} resulting the extended absorption hump in the visible region. Photoluminescence results reveal the presence of oxygen defect related emission peaks in Cu doped TiO{sub 2}. Room temperature ferromagnetism is observed in all the Cu doped TiO{sub 2} nanoparticles. Saturation magnetization is the highest at 4 mol% and then there is a decrease in magnetization at 6 mol%. Ferromagnetism completely disappears on calcinations of 4% Cu doped TiO{sub 2} in air at 450 °C for 8 h. It is speculated that both oxygen vacancies and Cu d-states are involved in the room temperature ferromagnetism. Spin polarization occurs by the formation of bound magnetic polaron between electrons in Cu{sup 2+}d-states and the unpaired spins in oxygen vacancies. Presence of Cu{sup 2+}-Cu{sup 2+}d-d exchange interaction and Cu{sup 2+}-O{sup 2−}-Cu{sup 2+} antiferromagnetic superexchange interactions might have resulted in the reduction in magnetization at 6 mol% Cu. - Graphical abstract: Ferromagnetism in Cu doped TiO{sub 2} requires presence of both Cu dopant and oxygen vacancies. - Highlights: • Cu doped TiO{sub 2} nanoparticle displays room temperature ferromagnetism. • Ferromagnetism requires presence of both Cu and oxygen vacancies. • Antiferromagnetic interaction persists at high Cu dopant concentration. • Paramagnetism appears on air annealing of the doped system for longer period.

Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds

Science.gov (United States)

Graziosi, Patrizio; Neophytou, Neophytos

2018-02-01

Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical top-of-the-barrier FET model, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts. Such a device could retain the spin polarization of injected electrons in the channel, the loss of which limits the operation of traditional spin transistors with non-ferromagnetic channels. We examine the operation of four material systems that are currently considered some of the most prominent known ferromagnetic semiconductors: three Heusler-type alloys (Mn2CoAl, CrVZrAl, and CoVZrAl) and one from the oxide family (NiFe2O4). We describe their band structures by using data from DFT (Density Functional Theory) calculations. We investigate under which conditions high spin polarization and significant ION/IOFF ratio, two essential requirements for the spin-MOSFET operation, are both achieved. We show that these particular Heusler channels, in their bulk form, do not have adequate bandgap to provide high ION/IOFF ratios and have small magnetoconductance compared to state-of-the-art devices. However, with confinement into ultra-narrow sizes down to a few nanometers, and by engineering their spin dependent contact resistances, they could prove promising channel materials for the realization of spin-MOSFET transistor devices that offer combined logic and memory functionalities. Although the main compounds of interest in this paper are Mn2CoAl, CrVZrAl, CoVZrAl, and NiFe2O4 alone, we expect that the insight we provide is relevant to other classes of such materials as well.

Critical behaviors of half-metallic ferromagnet Co3Sn2S2

OpenAIRE

Yan, Weinian; Zhang, Xiao; Shi, Qi; Yu, Xiaoyun; Zhang, Zhiqing; Wang, Qi; Li, Si; Lei, Hechang

2018-01-01

We have investigated the critical behavior of a shandite-type half-metal ferromagnet Co3Sn2S2. It exhibits a second-order paramagnetic-ferromagnetic phase transition with TC = 174 K. To investigate the nature of the magnetic phase transition, a detailed critical exponent study has been performed. The critical components beta, gamma, and delta determined using the modified Arrott plot, the Kouvel-Fisher method as well as the critical isotherm analysis are match reasonably well and follow the s...

Interchange core/shell assembly of diluted magnetic semiconductor CeO2 and ferromagnetic ferrite Fe3O4 for microwave absorption

Directory of Open Access Journals (Sweden)

Jiaheng Wang

2017-05-01

Full Text Available Core/shell-structured CeO2/Fe3O4 and Fe3O4/CeO2 nanocapsules are prepared by interchange assembly of diluted magnetic semiconductor CeO2 and ferromagnetic ferrite Fe3O4 as the core and the shell, and vice versa, using a facile two-step polar solvothermal method in order to utilize the room-temperature ferromagnetism and abundant O-vacancies in CeO2, the large natural resonance in Fe3O4, and the O-vacancy-enhanced interfacial polarization between CeO2 and Fe3O4 for new generation microwave absorbers. Comparing to Fe3O4/CeO2 nanocapsules, the CeO2/Fe3O4 nanocapsules show an improved real permittivity of 3–10% and an enhanced dielectric resonance of 1.5 times at 15.3 GHz due to the increased O-vacancy concentration in the CeO2 cores of larger grains as well as the O-vacancy-induced enhancement in interfacial polarization between the CeO2 cores and the Fe3O4 shells, respectively. Both nanocapsules exhibit relatively high permeability in the low-frequency S and C microwave bands as a result of the bi-magnetic core/shell combination of CeO2 and Fe3O4. The CeO2/Fe3O4 nanocapsules effectively enhance permittivity and permeability in the high-frequency Ku band with interfacial polarization and natural resonance at ∼15 GHz, thereby improving absorption with a large reflection loss of -28.9 dB at 15.3 GHz. Experimental and theoretical comparisons with CeO2 and Fe3O4 nanoparticles are also made.

Electronic structure of the Ga1-xCrxN studied by high-energy photoemission spectroscopy

International Nuclear Information System (INIS)

Kim, J.J.; Makino, H.; Hanada, T.; Cho, M.W.; Yao, T.; Takata, Y.; Nishino, Y.; Tamasaku, K.; Ishikawa, T.; Shin, S.; Kobayashi, K.; Ikenaga, E.; Yabashi, M.; Yamamoto, T.

2004-01-01

Full text: It is predicted based on hole-mediated ferromagnetism (FM) that GaMnN may have Curie temperature (Tc) higher than room temperature if doped with high hole concentration (ca 10 20 cm -3 ). The hole-mediated ferromagnetism (FM) can produce reliable estimate of Tc for diluted magnetic semiconductor (DMS) such as GaMnAs due to the shallow Mn-associated energy states in the GaAs system. Since the energy states of doped transition metals exist as a deep level in a wide band semiconductor like GaN and carriers are localized in these states, different mechanisms for magnetism will play a role in GaN rather than the hole-mediated one. This conjecture is partly supported by the recent report of FM in n-type GaN doped with Cr, although the mechanism of the observed FM has not been elucidated yet. In order to get insight into the mechanism of the FM, we have studied the electronic structure of GaN doped with Cr exploiting bulk-sensitive hard X-ray photoemission spectroscopy at a photon energy of 5.95keV at SPring-8. We have observed that Cr-doping does introduce new electronic levels in the band gap and causes some change in the valence band structure. Based on the first principle calculation, the Cr-associated electronic levels in the band gap are assigned to nonbonding and anti-bonding d states, the latter of which pins the Fermi level, while the change of the valence band suggests that the Ga 4s originated states are significantly modified through hybridization with the Cr 3d orbital. The present result evidences that the Ga valence electrons are considerably modified through the interaction with second neighbor Cr atoms. Such hybridization between Ga 4s and Cr 3d may play a significant role in the observed ferromagnetism in Ga 1-x Cr x N

High mobility emissive organic semiconductor

Science.gov (United States)

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Investigation of a Mesoporous Silicon Based Ferromagnetic Nanocomposite

Directory of Open Access Journals (Sweden)

Roca AG

2009-01-01

Full Text Available Abstract A semiconductor/metal nanocomposite is composed of a porosified silicon wafer and embedded ferromagnetic nanostructures. The obtained hybrid system possesses the electronic properties of silicon together with the magnetic properties of the incorporated ferromagnetic metal. On the one hand, a transition metal is electrochemically deposited from a metal salt solution into the nanostructured silicon skeleton, on the other hand magnetic particles of a few nanometres in size, fabricated in solution, are incorporated by immersion. The electrochemically deposited nanostructures can be tuned in size, shape and their spatial distribution by the process parameters, and thus specimens with desired ferromagnetic properties can be fabricated. Using magnetite nanoparticles for infiltration into porous silicon is of interest not only because of the magnetic properties of the composite material due to the possible modification of the ferromagnetic/superparamagnetic transition but also because of the biocompatibility of the system caused by the low toxicity of both materials. Thus, it is a promising candidate for biomedical applications as drug delivery or biomedical targeting.

Higgs transition from a magnetic Coulomb liquid to a ferromagnet in Yb₂Ti₂O₇.

Science.gov (United States)

Chang, Lieh-Jeng; Onoda, Shigeki; Su, Yixi; Kao, Ying-Jer; Tsuei, Ku-Ding; Yasui, Yukio; Kakurai, Kazuhisa; Lees, Martin Richard

2012-01-01

In a class of frustrated magnets known as spin ice, magnetic monopoles emerge as classical defects and interact via the magnetic Coulomb law. With quantum-mechanical interactions, these magnetic charges are carried by fractionalized bosonic quasi-particles, spinons, which can undergo Bose-Einstein condensation through a first-order transition via the Higgs mechanism. Here, we report evidence of a Higgs transition from a magnetic Coulomb liquid to a ferromagnet in single-crystal Yb(2)Ti(2)O(7). Polarized neutron scattering experiments show that the diffuse [111]-rod scattering and pinch-point features, which develop on cooling are suddenly suppressed below T(C)~0.21 K, where magnetic Bragg peaks and a full depolarization of the neutron spins are observed with thermal hysteresis, indicating a first-order ferromagnetic transition. Our results are explained on the basis of a quantum spin-ice model, whose high-temperature phase is effectively described as a magnetic Coulomb liquid, whereas the ground state shows a nearly collinear ferromagnetism with gapped spin excitations.

Magnetic levitation systems using a high-Tc superconducting bulk magnet

Energy Technology Data Exchange (ETDEWEB)

Ohsaki, Hiroyuki [Dept. of Electrical Engineering, Univ. of Tokyo (Japan); Kitahara, Hirotaka [Dept. of Electrical Engineering, Univ. of Tokyo (Japan); Masada, Eisuke [Dept. of Electrical Engineering, Univ. of Tokyo (Japan)

1996-12-31

Recent development of high-performance high-Tc bulk superconductors is making their application for electromagnetic force use feasible. We have studied electromagnetic levitation systems using high-Tc bulk superconducting material. In this paper, after an overview of superconducting magnetic levitation systems, with an emphasis on high-Tc bulk superconductor applications, experimental results of a high-Tc bulk EMS levitation and FEM analysis results of magnetic gradient levitation using bulk superconductor are described. Problems to be solved for their application are also discussed. (orig.)

Infrared conductivity of metallic (III, Mn)V ferromagnets

Czech Academy of Sciences Publication Activity Database

Sinova, J.; Jungwirth, Tomáš; Yang, E. S. R.; MacDonald, A. H.

2002-01-01

Roč. 66, č. 4 (2002), s. 041202-1-041202-4 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * infrared conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

METHODOLOGICAL NOTES: Integrating magnetism into semiconductor electronics

Science.gov (United States)

Zakharchenya, Boris P.; Korenev, Vladimir L.

2005-06-01

The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

Science.gov (United States)

Czeschka, F. D.; Dreher, L.; Brandt, M. S.; Weiler, M.; Althammer, M.; Imort, I.-M.; Reiss, G.; Thomas, A.; Schoch, W.; Limmer, W.; Huebl, H.; Gross, R.; Goennenwein, S. T. B.

2011-07-01

We systematically measured the dc voltage VISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, VISH invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode

Energy Technology Data Exchange (ETDEWEB)

Comesana, E; Aldegunde, M; GarcIa-Loureiro, A, E-mail: enrique.comesana@usc.e [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain)

2009-11-15

In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature T{sub C} near or over room temperature and this will facilitate the introduction of new devices that make use of the ferromagnetism effects. According to our calculations the tunneling magnetoresistance has the form TMR {proportional_to} (T{sup n}{sub C}-T{sup n}).

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Enhanced room temperature ferromagnetism in antiferromagnetic NiO nanoparticles

Directory of Open Access Journals (Sweden)

Patta Ravikumar

2015-08-01

Full Text Available We report systematic investigations of structural, vibrational, resonance and magnetic properties of nanoscale NiO powders prepared by ball milling process under different milling speeds for 30 hours of milling. Structural properties revealed that both pure NiO and as-milled NiO powders exhibit face centered cubic structure, but average crystallite size decreases to around 11 nm along with significant increase in strain with increasing milling speed. Vibrational properties show the enhancement in the intensity of one-phonon longitudinal optical (LO band and disappearance of two-magnon band due to size reduction. In addition, two-phonon LO band exhibits red shift due to size-induced phonon confinement effect and surface relaxation. Pure NiO powder exhibit antiferromagnetic nature, which transforms into induced ferromagnetic after size reduction. The average magnetization at room temperature increases with decreasing the crystallite size and a maximum moment of 0.016 μB/f.u. at 12 kOe applied field and coercivity of 170 Oe were obtained for 30 hours milled NiO powders at 600 rotation per minute milling speed. The change in the magnetic properties is also supported by the vibrational properties. Thermomagnetization measurements at high temperature reveal a well-defined magnetic phase transition at high temperature (TC around 780 K due to induced ferromagnetic phase. Electron paramagnetic resonance (EPR studies reveal a good agreement between the EPR results and magnetic properties. The observed results are described on the basis of crystallite size variation, defect density, large strain, oxidation/reduction of Ni and interaction between uncompensated surfaces and particle core with lattice expansion. The obtained results suggest that nanoscale NiO powders with high TC and moderate magnetic moment at room temperature with cubic structure would be useful to expedite for spintronic devices.

A new detection method of 99Tc by nuclear excitation

International Nuclear Information System (INIS)

Sekine, T.; Yoshihara, Kenji; Nemeth, Zs.; Lakosi, L.; Veres, A.

1989-01-01

A new nuclear excitation process, 99 Tc(γ,γ') 99m Tc reaction, was applied for the first time to radioactivation analysis of technetium. Bremsstrahlung irradiation of 99 Tc samples gave the reaction product 99m Tc which emits γ-ray easily measurable by a semiconductor detector. The production rate of 99m Tc per μg 99 Tc was linearly correlated with the flux of bremsstrahlung. The detection limit of 99 Tc was estimated to be nanogram order (0.63 Bq 99 Tc) under the optimum irradiation condition. Possible interference by 100 Ru(γ, p) 99m Tc reaction was also studied, which could be discriminated from the (γ,γ') reaction by simultaneously occurring 98 Ru(γ,p) 97 Ru reaction. (author) 17 refs.; 7 figs

Li(Zn,Co,MnAs: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

Directory of Open Access Journals (Sweden)

Bijuan Chen

2016-11-01

Full Text Available We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMnyAs with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,MnAs. No ferromagnetic order occurs with single (Zn,Co or (Zn, Mn substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ∼40 K. The maximum saturation moment of the this system reached to 2.17μB/Mn, which is comparable to that of Li (Zn,MnAs. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in “111” LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,MnAs, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

Nanomorphology Effects in Semiconductors with Native Ferromagnetism: Hierarchical Europium (II) Oxide Tubes Prepared via a Topotactic Nanostructure Transition.

Science.gov (United States)

Trepka, Bastian; Erler, Philipp; Selzer, Severin; Kollek, Tom; Boldt, Klaus; Fonin, Mikhail; Nowak, Ulrich; Wolf, Daniel; Lubk, Axel; Polarz, Sebastian

2018-01-01

Semiconductors with native ferromagnetism barely exist and defined nanostructures are almost unknown. This lack impedes the exploration of a new class of materials characterized by a direct combination of effects on the electronic system caused by quantum confinement effects with magnetism. A good example is EuO for which currently no reliable routes for nanoparticle synthesis can be established. Bottom-up approaches applicable to other oxides fail because of the labile oxidation state +II. Instead of targeting a direct synthesis, the two steps-"structure control" and "chemical transformation"-are separated. The generation of a transitional, hybrid nanophase is followed by its conversion into EuO under full conservation of all morphological features. Hierarchical EuO materials are now accessible in the shape of oriented nanodisks stacked to tubular particles. Magnetically, the coupling of either vortex or onion states has been found. An unexpected temperature dependence is governed by thermally activated transitions between these states. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rise and fall of ferromagnetism in O-irradiated Al{sub 2}O{sub 3} single crystals

Energy Technology Data Exchange (ETDEWEB)

Li, Qiang [State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China); China Spallation Neutron Source, Institute of High Energy Physics, Chinese Academy of Sciences, Dongguan 523803 (China); Xu, Juping; Liu, Jiandang; Du, Huaijiang; Ye, Bangjiao, E-mail: bjye@ustc.edu.cn [State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China)

2015-06-21

In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al{sub 2}O{sub 3} single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al{sub 2}O{sub 3} crystal and form stable V{sub Al}-V{sub Al} ferromagnetic coupling at room temperature.

Critical Temperature of Randomly Diluted Two-Dimensional Heisenberg Ferromagnet, K2CuxZn(1-x)F4

Science.gov (United States)

Okuda, Yuichi; Tohi, Yasuto; Yamada, Isao; Haseda, Taiichiro

1980-09-01

The susceptibility of randomly diluted two-dimensional Heisenberg-like ferromagnet K2CuxZn(1-x)F4 was measured down to 50 mK, using the 3He-4He dilution refrigerator and a SQUID magnetometer. The ferromagnetic critical temperature Tc(x) was obtained for x{=}0.98, 0.94, 0.85, 0.82, 0.68, 0.60, 0.54, 0.50 and 0.42. The value of [1/Tc(1)][(d/dx)Tc(x)]x=1 was approximately 3.0. The critical temperature versus x curve exhibits a noticeable tail near the critical concentration, which may stem from the second nearest-neighbor interaction. The critical concentration xc, below which concentration there is no long range order down to T{=}0 K, was estimated to be 0.45˜0.50. The susceptibility of sample with x{=}0.42 behaves as if it obeys the Curie law down to 50 mK.

Effects of electric field and magnetic induction on spin injection into organic semiconductors

International Nuclear Information System (INIS)

Wang, Y.M.; Ren, J.F.; Yuan, X.B.; Dou, Z.T.; Hu, G.C.

2011-01-01

Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. -- Research highlights: → Current polarization in ferromagnetic/organic semiconductor structure is obtained. → Calculations are based on spin-drift-diffusion theory and Ohm's law. → Current polarization is enhanced by tuning magnetic induction and electric fields. → Effects of interfacial resistances and the special carriers are also discussed.

Electronic properties of high-Tc superconductors. The normal and the superconducting state of high-Tc materials. Proceedings

International Nuclear Information System (INIS)

Kuzmany, H.; Mehring, M.; Fink, J.

1993-01-01

The International Winter School on Electronic Properties of High-Temperature Superconductors, held between March 7-14, 1992, in Kirchberg, (Tyrol) Austria, was the sixth in a series of meetings to be held at this venue. Four of the earlier meetings were dedicated to issues in the field of conducting polymers, while the winter school held in 1990 was devoted to the new discipline of high-Tc superconductivity. This year's meeting constituted a forum not only for the large number of scientists engaged in high-Tc research, but also for those involved in the new and exciting field of fullerenes. Many of the issues raised during the earlier winter schools on conducting polymers, and the last one on high-Tc superconductivity, have taken on a new significance in the light of the discovery of superconducting C 60 materials. The Kirchberg meetings are organized in the style of a school where experienced scientists from universities, research laboratories and industry have the opportunity to discuss their most recent results, and where students and young scientists can learn about the present status of research and applications from some of the most eminent workers in their field. In common with the previous winter school on high-Tc superconductors, the present one focused on the electronic properties of the cuprate superconductors. In addition, consideration was given to related compounds which are relevant to the understanding of the electronic structure of the cuprates in the normal state, to other oxide superconductors and to fulleride superconductors. Contributions dealing with their preparation, transport and thermal properties, high-energy spectroscopies, nuclear magnetic resonance, inelastic neutron scattering, and optical spectroscopy are presented in this volume. The theory of the normal and superconducting states also occupies a central position. (orig.)

Mechanism of carrier-induced ferromagnetism in diluted magnetic semiconductors

International Nuclear Information System (INIS)

Takahashi, M.; Furukawa, N.; Kubo, K.

2004-01-01

Using the spin-polarized band obtained by applying the dynamical coherent potential approximation to a simple model, we have calculated the magnetization of Ga x Mn 1-x As as a function of the temperature for various values of carrier density. The result is consistent with the experimental observation, supporting the view previously proposed by us that the ferromagnetism is induced by the carriers in the bandtail through double-exchange-like mechanism

Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

Energy Technology Data Exchange (ETDEWEB)

Liu, C.; Boyko, Y.; Geppert, C. C.; Christie, K. D.; Stecklein, G.; Crowell, P. A., E-mail: crowell@physics.umn.edu [School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Patel, S. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Palmstrøm, C. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-11-24

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

Scaling behavior of the spin pumping effect in conductive ferromagnet/platinum bilayers

Energy Technology Data Exchange (ETDEWEB)

Czeschka, Franz D.; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas; Brandt, Martin S. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Imort, Inga-Mareen; Reiss, Guenter; Thomas, Andy [Fakultaet fuer Physik, Universitaet Bielefeld (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm (Germany)

2011-07-01

Spin pumping experiments allow to measure spin currents or the spin Hall angle. We have systematically studied the spin pumping DC voltage occurring in conjunction with ferromagnetic resonance in a series of conductive ferromagnet/platinum bilayers, made from elemental 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors. In all bilayers, we invariably observe the same DC voltage polarity. Moreover, we find that the voltage magnitude scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism, and the charge carrier type in a given ferromagnet. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect, and establish spin pumping as a generic phenomenon.

Magnetic exitations in the itinerant ferromagnet UFe₂

DEFF Research Database (Denmark)

Paolasini, L.; Lander, G.H.; Shapiro, S.M.

1996-01-01

UFe2 (Laves phase, fee crystal structure) is a ferromagnet with T-C=165 K, Previous neutron elastic measurements have established that the Fe moment is 0.6 mu(B) and that the moment on the U atom is almost zero because of the cancellation of the spin and orbital moments, which are both about 0.23...... electrons. We find also that D is strongly temperature dependent, presumably due to two-magnon interactions. Thus, this effect, together with the low moment on the Fe atoms, results in the comparatively low, as compared to the RFe(2) compounds, T-C of 165 K in UFe2....

Formation of Electron Strings in Narrow Band Polar Semiconductors

Science.gov (United States)

Kusmartsev, F. V.

2000-01-01

We show that linear electron strings may arise in polar semiconductors. A single string consists of M spinless fermions trapped by an extended polarization well of a cigar shape. Inside the string the particles are free although they interact with each other via Coulomb forces. The strings arise as a result of an electronic phase separation associated with an instability of small adiabatic polarons. We have found the length of the string which depends on dielectric constants of semiconductors. The appearance of these electron strings may have an impact on the effect of stripe formation observed in a variety of high- Tc experiments.

One-dimensional ferromagnetic array compound [Co3(SBA)2(OH)2(H2O)2]n, (SBA = 4-sulfobenzoate)

Science.gov (United States)

Honda, Zentaro; Nomoto, Naoyuki; Fujihara, Takashi; Hagiwara, Masayuki; Kida, Takanori; Sawada, Yuya; Fukuda, Takeshi; Kamata, Norihiko

2018-06-01

We report on the syntheses, crystal structure, and magnetic properties of the transition metal coordination polymer [Co3(SBA)2(OH)2(H2O)2]n, (SBA = 4-sulfobenzoate) in which CoO6 octahedra are linked through their edges, forming one-dimensional (1D) Co(II) arrays running along the crystal a-axis. These arrays are further perpendicularly bridged by SBA ligand to construct a three-dimensional framework. Its magnetic properties have been investigated, and ferromagnetic interactions within the arrays have been found. From heat capacity measurements, we have found that this compound exhibits a three-dimensional ferromagnetic phase transition at TC = 1.54 K, and the specific heat just above TC shows a Schottky anomaly which originates from an energy gap caused by uniaxial magnetic anisotropy. These results suggest that [Co3(SBA)2(OH)2(H2O)2]n consists of weakly coupled 1D ferromagnetic Ising arrays.

Preparation of Boron Nitride Nanoparticles with Oxygen Doping and a Study of Their Room-Temperature Ferromagnetism.

Science.gov (United States)

Lu, Qing; Zhao, Qi; Yang, Tianye; Zhai, Chengbo; Wang, Dongxue; Zhang, Mingzhe

2018-04-18

In this work, oxygen-doped boron nitride nanoparticles with room-temperature ferromagnetism have been synthesized by a new, facile, and efficient method. There are no metal magnetic impurities in the nanoparticles analyzed by X-ray photoelectron spectroscopy. The boron nitride nanoparticles exhibit a parabolic shape with increase in the reaction time. The saturation magnetization value reaches a maximum of 0.2975 emu g -1 at 300 K when the reaction time is 12 h, indicating that the Curie temperature ( T C ) is higher than 300 K. Combined with first-principles calculation, the coupling between B 2p orbital, N 2p orbital, and O 2p orbital in the conduction bands is the main origin of room-temperature ferromagnetism and also proves that the magnetic moment changes according the oxygen-doping content change. Compared with other room temperature ferromagnetic semiconductors, boron nitride nanoparticles have widely potential applications in spintronic devices because of high temperature oxidation resistance and excellent chemical stability.

Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

Science.gov (United States)

Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

2014-03-01

The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

The design and investigation of hybrid ferromagnetic/silicon spin electronic devices

International Nuclear Information System (INIS)

Pugh, D.I.

2001-01-01

The focus of this study concerns the design and investigation of ferromagnetic/silicon hybrid spin electronic devices as part of a wider project to design a novel spin valve transistor. The key issue to obtain a room temperature spin electronic device is the electrical injection of a spin polarised current from a ferromagnetic contact into a semiconductor. Despite many attempts concentrating on GaAs and InAs only small (< 1%) effects have been observed, making it difficult to confirm spin injection. Lateral devices were designed and fabricated using standard device fabrication procedures to produce arrays of Co/Si/So junctions. Subsequent designs aimed to reduce the number of junctions and improve device isolation. Evidence for spin dependent MR of up to 0.56% was observed in Co/p-Si/Co junctions with silicon gaps up to 16 μm in length. The maximum MR was observed when the first Co/Si Schottky barrier was reverse biased forming a high resistance interface. Vertical devices were designed in an attempt to eliminate any alternative current paths by using a well defined, 1 μm thick silicon membrane. Despite attempts to include oxide barriers, no spin dependent MR was observed in these devices. However, a novel vertical silicon based design has been made which should facilitate further advanced studies of spin injection and transport. The spin diffusion length in n-type silicon has been calculated as a function of doping concentration and temperature by considering the spin relaxation mechanisms in the semiconductor. Discussion has been made concerning p-type silicon and comparisons made with GaAs, indicating that n-Si should show longer spin diffusion lengths. The key design criteria for designing room temperature spin electronic devices have been highlighted. These include the use of a high leakage Schottky barrier or tunnel barrier between the ferromagnet and p-Si and a contact to the silicon to enable appropriate biasing to each FM/Si interface. (author)

Half-metallic ferromagnetism in Cu-doped zinc-blende ZnO from first principles study

International Nuclear Information System (INIS)

Li, X.F.; Zhang, J.; Xu, B.; Yao, K.L.

2012-01-01

Electronic structures and magnetism of Cu-doped zinc-blende ZnO have been investigated by the first-principle method based on density functional theory (DFT). The results show that Cu can induce stable ferromagnetic ground state. The magnetic moment of supercell including single Cu atom is 1.0 μ B . Electronic structure shows that Cu-doped zinc-blende ZnO is a p-type half-metallic ferromagnet. The half-metal property is mainly attribute to the crystal field splitting of Cu 3d orbital, and the ferromagnetism is dominated by the hole-mediated double exchange mechanism. Therefore, Cu-doped zinc-blende ZnO should be useful in semiconductor spintronics and other applications. - Highlights: → Magnetism of Cu-doped zinc-blende ZnO. → Cu-doped zinc-blende ZnO shows interesting half-metal character. → Total energies calculations reveal that Cu can induce ferromagnetic ground state. → Ferromagnetism dominated by the hole-mediated double exchange mechanism.

Rugged Low-Resistance Contacts To High-Tc Superconductors

Science.gov (United States)

Caton, Randall; Selim, Raouf; Byvik, Charles E.; Buoncristiani, A. Martin

1992-01-01

Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.

High pressure semiconductor physics I

CERN Document Server

Willardson, R K; Paul, William; Suski, Tadeusz

1998-01-01

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

Room temperature ferromagnetism and absorption red-shift in nitrogen-doped TiO2 nanoparticles

International Nuclear Information System (INIS)

Gómez-Polo, C.; Larumbe, S.; Monge, M.

2014-01-01

Highlights: • N-doped TiO 2 anatase nanoparticles were obtained by sol–gel. • The nanoparticle size, controlled by the N doping, determines lattice parameters. • Correlation between room temperature ferromagnetism and absorption red-shift. • Oxygen vacancies reinforce both phenomena. • Metal transition impurities contribute to the room temperature ferromagnetism. - Abstract: In this work, room-temperature ferromagnetism and the red-shift of the optical absorption is analyzed in nitrogen doped TiO 2 semiconductor nanoparticles. The nanoparticles were synthesized by the sol–gel method using urea as the nitrogen source. Titanium Tetraisopropoxide (TTIP) was employed as the alkoxyde precursor and dissolved in ethanol. The as prepared gels were dried and calcined in air at 300 °C. Additionally, post-annealing treatments under vacuum atmosphere were performed to modify the oxygen stoichiometry of the samples. The anatase lattice parameters, analyzed by means of powder X-ray diffractometry, depend on the nanometer grain size of the nanoparticles (increase and decrease, respectively, of the tetragonal a and c lattice parameters with respect to the bulk values). The diffuse reflectance ultraviolet–visible (UV–Vis) absorbance spectra show a clear red-shift as consequence of the nitrogen and the occurrence of intragap energy levels. The samples display ferromagnetic features at room temperature that are reinforced with the nitrogen content and after the post annealings in vacuum. The results indicate a clear correlation between the room temperature ferromagnetism and the shift of the absorbance spectrum. In both phenomena, oxygen vacancies (either induced by the nitrogen doping or by the post vacuum annealings) play a dominant role. However, we conclude the existence of very low concentration of diluted transition metal impurities that determine the room ferromagnetic response (bound magnetic polaron BMP model). The contraction of the c soft axis of the

Semiconductor spintronics

International Nuclear Information System (INIS)

Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

2007-01-01

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

The electronic structures and ferromagnetism of Fe-doped GaSb: The first-principle calculation study

Science.gov (United States)

Lin, Xue-ling; Niu, Cao-ping; Pan, Feng-chun; Chen, Huan-ming; Wang, Xu-ming

2017-09-01

The electronic structures and the magnetic properties of Fe doped GaSb have been investigated by the first-principles calculation based on the framework of the generalized gradient approximation (GGA) and GGA+U schemes. The calculated results indicated that Fe atoms tend to form the anti-ferromagnetic (AFM) coupling with the nearest-neighbor positions preferentially. Compared with the anti-ferromagnetic coupling, the ferromagnetic interactions occurred at the second nearest-neighbor and third nearest-neighbor sites have a bigger superiority energetically. The effect of strong electron correlation at Fe-d orbit taking on the magnetic properties predicted by GGA+U approach demonstrated that the ferromagnetic (FM) coupling between the Fe ions is even stronger in consideration of the strong electron correlation effect. The ferromagnetism in Fe doped GaSb system predicted by our investigation implied that the doping of Fe into GaSb can be as a vital routine for manufacturing the FM semiconductors with higher Curie temperature.

Absence of field anisotropy in the intrinsic ferromagnetic signals of highly oriented pyrolytic graphite

International Nuclear Information System (INIS)

Ballestar, A.; Setzer, A.; Esquinazi, P.; Garcia, N.

2011-01-01

We have measured the magnetization of bulk samples of highly oriented pyrolytic graphite (HOPG) at magnetic fields applied parallel and perpendicular to the graphene layers. Within experimental error the intrinsic ferromagnetic signals of the samples show similar magnetic moments at saturation for the two magnetic field directions, in contrast to recently published data (J. Cervenka et al., Nat. Phys. 5 (2009) 840). To check that the SQUID device provides correctly the small ferromagnetic signals obtained after subtracting the 100 times larger diamagnetic background, we have prepared a sample with a superconducting Pb-film deposited on one of the HOPG surfaces. We show that the field dependence of the measured magnetic moment and after the background subtraction is highly reliable even in the sub-μ emu range providing the real magnetic properties of the embedded small ferromagnetic and superconducting signals. - Research Highlights: → We have measured the magnetization of bulk samples of highly oriented pyrolytic graphite (HOPG) at magnetic fields applied parallel and perpendicular to the graphene layers.→ Within experimental error the intrinsic ferromagnetic signals of the samples show similar magnetic moments at saturation for the two magnetic field directions.→ The absence of magnetic anisotropy of the intrinsic ferromagnetic order found in HOPG samples contrasts recently published data by Cervenka et al., Nat Phys 5, 840 (2009).

Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

International Nuclear Information System (INIS)

Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

2014-01-01

One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis

Molecular-beam epitaxy growth and structural characterization of semiconductor-ferromagnet heterostructures by grazing incidence X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Satapathy, D.K.

2005-12-19

The present work is devoted to the growth of the ferromagnetic metal MnAs on the semiconductor GaAs by molecular-beam epitaxy (MBE). The MnAs thin films are deposited on GaAs by molecular-beam epitaxy (MBE). Grazing incidence diffraction (GID) and reflection high-energy electron diffraction (RHEED) are used in situ to investigate the nucleation, evolution of strain, morphology and interfacial structure during the MBE growth. Four stages of the nucleation process during growth of MnAs on GaAs(001) are revealed by RHEED azimuthal scans. GID shows that further growth of MnAs films proceed via the formation of relaxed islands at a nominal thickness of 2.5 ML which increase in size and finally coalesce to form a continuous film. Early on, an ordered array of misfit dislocations forms at the interface releasing the misfit strain even before complete coalescence occurs. The fascinating complex nucleation process of MnAs on GaAs(0 0 1) contains elements of both Volmer-Weber and Stranski-Krastanov growth. A nonuniform strain amounting to 0.66%, along the [1 -1 0] direction and 0.54%, along the [1 1 0] direction is demonstrated from x-ray line profile analysis. A high correlation between the defects is found along the GaAs[1 1 0] direction. An extremely periodic array of misfit dislocations with a period of 4.95{+-}0.05 nm is formed at the interface along the [1 1 0] direction which releases the 7.5% of misfit. The inhomogeneous strain due to the periodic dislocations is confined at the interface within a layer of 1.6 nm thickness. The misfit along the [1 -1 0] direction is released by the formation of a coincidence site lattice. (orig.)

Room temperature ferromagnetism and absorption red-shift in nitrogen-doped TiO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Gómez-Polo, C., E-mail: gpolo@unavarra.es [Departamento de Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Larumbe, S. [Departamento de Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Monge, M. [Departamento de Química, Universidad de la Rioja, Centro de Investigación en Síntesis Química (CISQ), Complejo Científico Tecnológico, 26006 Logroño (Spain)

2014-11-05

Highlights: • N-doped TiO{sub 2} anatase nanoparticles were obtained by sol–gel. • The nanoparticle size, controlled by the N doping, determines lattice parameters. • Correlation between room temperature ferromagnetism and absorption red-shift. • Oxygen vacancies reinforce both phenomena. • Metal transition impurities contribute to the room temperature ferromagnetism. - Abstract: In this work, room-temperature ferromagnetism and the red-shift of the optical absorption is analyzed in nitrogen doped TiO{sub 2} semiconductor nanoparticles. The nanoparticles were synthesized by the sol–gel method using urea as the nitrogen source. Titanium Tetraisopropoxide (TTIP) was employed as the alkoxyde precursor and dissolved in ethanol. The as prepared gels were dried and calcined in air at 300 °C. Additionally, post-annealing treatments under vacuum atmosphere were performed to modify the oxygen stoichiometry of the samples. The anatase lattice parameters, analyzed by means of powder X-ray diffractometry, depend on the nanometer grain size of the nanoparticles (increase and decrease, respectively, of the tetragonal a and c lattice parameters with respect to the bulk values). The diffuse reflectance ultraviolet–visible (UV–Vis) absorbance spectra show a clear red-shift as consequence of the nitrogen and the occurrence of intragap energy levels. The samples display ferromagnetic features at room temperature that are reinforced with the nitrogen content and after the post annealings in vacuum. The results indicate a clear correlation between the room temperature ferromagnetism and the shift of the absorbance spectrum. In both phenomena, oxygen vacancies (either induced by the nitrogen doping or by the post vacuum annealings) play a dominant role. However, we conclude the existence of very low concentration of diluted transition metal impurities that determine the room ferromagnetic response (bound magnetic polaron BMP model). The contraction of the c soft axis

Spin-polarized investigation of ferromagnetism on magnetic semiconductors Mn{sub x}Ca{sub 1−x}S in the rock-salt phase

Energy Technology Data Exchange (ETDEWEB)

Choutri, H.; Ghebouli, M.A. [LMSE Laboratory, University of Bachir Ibrahimi, 34265 Bordj-Bou-Arréridj (Algeria); Ghebouli, B. [Laboratory of Surface and Interface Studies of Solid Materials, Department of Physics, Faculty of Science, Setif University 1, Setif 19000 (Algeria); Bouarissa, N., E-mail: n_bouarissa@yahoo.fr [Department of Physics, Faculty of Science, University of M' sila, 28000 M' sila (Algeria); Uçgun, E.; Ocak, H.Y. [Department of Physics, Faculty of Arts and Sciences, Dumlupinar University, Kutahya (Turkey)

2014-12-15

The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors Mn{sub x}Ca{sub 1−x}S in the rock-salt phase have been investigated using first-principles calculations with both LDA and LDA + U functional. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of Mn{sub x}Ca{sub 1−x}S is 4.4μ{sub B} and 4.5μ{sub B} for LDA and LDA + U functional and is independent of the Mn concentration. The unfilled Mn-3d levels reduce the local magnetic moment of Mn from its free space charge value of 5μ{sub B}–4.4μ{sub B} and4.5μ{sub B} for LDA and LDA + U functional due to 3p–3d hybridization. - Highlights: • Fundamental properties of magnetic semiconductors Mn{sub x}Ca{sub 1−x}S. • Rock-salt phase of Mn{sub x}Ca{sub 1−x}S. • Magnetic properties of the diluted magnetic semiconductors Mn{sub x}Ca{sub 1−x}S. • The use of LDA + U functionals.

A novel propulsion method for high-Tc superconducting maglev vehicle

International Nuclear Information System (INIS)

Ma Guangtong; Wang Jiasu; Wang Suyu; Liu Minxian; Jing Hua; Lu Yiyun; Lin Qunxu

2008-01-01

High-Tc superconducting (HTS) maglev is considered as a perfect transportation type because of its unique inherent stability. A direct current (DC) linear motor using the permanent magnet guideway (PMG) as the stator and the on-board coil as the rotor instead of the present inductive or synchronous alternate current (AC) linear motor which has an economic disadvantage due to the necessity to lay primary coil along the guideway is proposed in this paper. In order to modulate the magnetic field under the PMG, an inverse E shape ferromagnetic device (IESFD) core is designed. The possible winding method for the on-board coil is listed, and the analytical result shows that a considerable net ampere force and thus the propulsion force can be generated by this special structure. The influence of the concentrated effect of the IESFD on the maglev performance of HTS bulk is studied by a numerical program, and the results show that the levitation force with the IESFD is 90% of that without. It is also indicated that the load capability and lateral performance of the maglev vehicle combined this propulsion method can be improved thanks to the attractive effect between the IESFD and PMG. The cost of the HTS maglev vehicle will be remarkably reduced and then shorten the distance to practical application with this propulsion method

A novel propulsion method for high- Tc superconducting maglev vehicle

Science.gov (United States)

Ma, Guangtong; Wang, Jiasu; Wang, Suyu; Liu, Minxian; Jing, Hua; Lu, Yiyun; Lin, Qunxu

2008-01-01

High-Tc superconducting (HTS) maglev is considered as a perfect transportation type because of its unique inherent stability. A direct current (DC) linear motor using the permanent magnet guideway (PMG) as the stator and the on-board coil as the rotor instead of the present inductive or synchronous alternate current (AC) linear motor which has an economic disadvantage due to the necessity to lay primary coil along the guideway is proposed in this paper. In order to modulate the magnetic field under the PMG, an inverse E shape ferromagnetic device (IESFD) core is designed. The possible winding method for the on-board coil is listed, and the analytical result shows that a considerable net ampere force and thus the propulsion force can be generated by this special structure. The influence of the concentrated effect of the IESFD on the maglev performance of HTS bulk is studied by a numerical program, and the results show that the levitation force with the IESFD is 90% of that without. It is also indicated that the load capability and lateral performance of the maglev vehicle combined this propulsion method can be improved thanks to the attractive effect between the IESFD and PMG. The cost of the HTS maglev vehicle will be remarkably reduced and then shorten the distance to practical application with this propulsion method.

Inter-Wire Antiferromagnetic Exchange Interaction in Ni/Si-Ferromagnetic/Semiconductor Nanocomposites

Science.gov (United States)

Granitzer, P.; Rumpf, K.; Hofmayer, M.; Krenn, H.; Pölt, P.; Reichmann, A.; Hofer, F.

2007-04-01

A matrix of mesoporous silicon offering an array of quasi 1-dimensional oriented pores of high aspect ratio perpendicular to the sample surface has been produced. This porous silicon (PS) skeleton is filled with Ni in a further process-step to achieve ferromagnetic metallic nanostructures within the channels. This produced silicon based nanocomposite is compatible with state-of-the-art silicon technology. Beside the vertical magnetic surface anisotropy of this Ni-filled composite the nearly monodisperse distribution of pore diameters and its regular arrangement in a quasi 2-dimensional lattice provides novel magnetic phenomena like a depression of the magnetization curve at magnetic fields beyond 2T, which can be interpreted as a field induced antiferromagnetic exchange interaction between Ni-wires which is strongly influenced by magnetostrictive stresses at the Ni/Si-interface. 2007 American Institute of Physics

Higgs transition from a magnetic Coulomb liquid to a ferromagnet in Yb2Ti2O7

Science.gov (United States)

Chang, Lieh-Jeng; Onoda, Shigeki; Su, Yixi; Kao, Ying-Jer; Tsuei, Ku-Ding; Yasui, Yukio; Kakurai, Kazuhisa; Lees, Martin Richard

2012-01-01

In a class of frustrated magnets known as spin ice, magnetic monopoles emerge as classical defects and interact via the magnetic Coulomb law. With quantum-mechanical interactions, these magnetic charges are carried by fractionalized bosonic quasi-particles, spinons, which can undergo Bose–Einstein condensation through a first-order transition via the Higgs mechanism. Here, we report evidence of a Higgs transition from a magnetic Coulomb liquid to a ferromagnet in single-crystal Yb2Ti2O7. Polarized neutron scattering experiments show that the diffuse [111]-rod scattering and pinch-point features, which develop on cooling are suddenly suppressed below TC~0.21 K, where magnetic Bragg peaks and a full depolarization of the neutron spins are observed with thermal hysteresis, indicating a first-order ferromagnetic transition. Our results are explained on the basis of a quantum spin-ice model, whose high-temperature phase is effectively described as a magnetic Coulomb liquid, whereas the ground state shows a nearly collinear ferromagnetism with gapped spin excitations. PMID:22871811

Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

KAUST Repository

Li, Peng; Xia, Chuan; Zhu, Zhiyong; Wen, Yan; Zhang, Qiang; Alshareef, Husam N.; Zhang, Xixiang

2016-01-01

In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin

Preparation of Mn doped CeO_2 nanoparticles with enhanced ferromagnetism

International Nuclear Information System (INIS)

Ravi, S.; Winfred Shashikanth, F.

2017-01-01

Spherical-like CeO_2 and Mn-doped CeO_2 using 6-aminohexanoic acid as surfactant exhibit enhanced ferromagnetism. The optical absorption spectra reveal a red shift with a band gap of 2.51 eV. The mechanics of ferromagnetism and the red shift were analyzed. These results provide a promising platform for developing a dilute magnetic semiconductor in spintronics. - Highlights: • Pure and Mn-doped CeO_2 is prepared with aminohexanoic acid as capping. • They exhibit wide optical absorption with red-shift in their band gap. • Mn-doped CeO_2 nanoparticle exhibit hysteresis at room temperature. • Results were promising to use in spintronics and opto-electronics field.

Room temperature ferromagnetism in nano-crystalline Co:ThO2 powders

International Nuclear Information System (INIS)

Bhide, M.K.; Kadam, R.M.; Godbole, S.V.; Tyagi, A.K.; Salunke, H.G.

2012-01-01

The major interest in dilute magnetic semiconductors (DMS's) had been directed towards the synthesis of room temperature ferromagnetic (RTF) materials for their potential applications in spintronic devices. Room temperature (RT) ferromagnetism was initially reported in Co doped TiO 2 , ZnO 2 and SnO 2 thin films and in the recent past in transition metal doped wide band gap materials. In the present paper we report the synthesis of Co doped ThO 2 nano powders by urea combustion method. The XRD characterization of 300℃ annealed samples confirmed formation of ThO 2 in the cubic phase and the average crystallite size obtained using Scherrer's formula was around 6 nm

Critical behavior of the magnetic susceptibility of the uniaxial ferromagnet LiHoF4

DEFF Research Database (Denmark)

Beauvillain, P.; Renard, J. P.; Laursen, Ib

1978-01-01

The magnetic susceptibility of two LiHoF4 single crystals has been measured in the range 1.2-4.2 K. Ferromagnetic order occurs at Tc=1.527 K. Above 2.5 K, the susceptibilities parallel and perpendicular to the fourfold c axis are well interpreted by the molecular-field approximation, taking...

Formation of spin-polarons in the ferromagnetic Kondo lattice model away from half-filling

International Nuclear Information System (INIS)

Arredondo, Y; Navarro, O; Vallejo, E; Avignon, M

2012-01-01

Even though realistic one-dimensional experiments in the field of half-metallic semiconductors are not at hand yet, we are interested in the underlying fundamental physics. In this regard we study a one-dimensional ferromagnetic Kondo lattice model, a model in which a conduction band is coupled ferromagnetically to a background of localized d moments with coupling constant J H , and investigate the T = 0 phase diagram as a function of the antiferromagnetic interaction J between the localized moments and the band-filling n, since it has been observed that doping of the compounds has led to formation of magnetic domains. We explore the spin-polaron formation by looking at the nearest-neighbour correlation functions in the spin and charge regimes for which we use the density matrix renormalization group method, which is a highly efficient method to investigate quasi-one-dimensional strongly correlated systems. (paper)

Evidence of dilute ferromagnetism in rare-earth doped yttrium aluminium garnet

Energy Technology Data Exchange (ETDEWEB)

Farr, Warrick G.; Goryachev, Maxim; Le Floch, Jean-Michel; Tobar, Michael E. [ARC Centre of Excellence for Engineered Quantum Systems, University of Western Australia, 35 Stirling Highway, Crawley, Western Australia 6009 (Australia); Bushev, Pavel [Experimentalphysik, Universität des Saarlandes, D-66123 Saarbrücken (Germany)

2015-09-21

This work demonstrates strong coupling regime between an erbium ion spin ensemble and microwave hybrid cavity-whispering gallery modes in a yttrium aluminium garnet dielectric crystal. Coupling strengths of 220 MHz and mode quality factors in excess of 10{sup 6} are demonstrated. Moreover, the magnetic response of high-Q modes demonstrates behaviour which is unusual for paramagnetic systems. This behaviour includes hysteresis and memory effects. Such qualitative change of the system's magnetic field response is interpreted as a phase transition of rare earth ion impurities. This phenomenon is similar to the phenomenon of dilute ferromagnetism in semiconductors. The clear temperature dependence of the phenomenon is demonstrated.

Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

Science.gov (United States)

Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

2016-04-26

Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

Spin-polarized carrier injection effect in ferromagnetic semiconductor/diffusive semiconductor/superconductor junctions

Energy Technology Data Exchange (ETDEWEB)

Akazaki, T [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198 Japan (Japan); Sawa, Y; Yokoyama, T; Tanaka, Y [Department of Applied Physics, Nagoya University, Nagoya, 464-8603 Japan (Japan); Golubov, A A [Faculty of Science and Technology, University of Twente, Enschede (Netherlands); Munekata, H [Image Science and Engineering Lab., Tokyo Institute of Technology, Yokohama, Kanagawa, 226-8503 Japan (Japan); Nishizawa, N; Takayanagi, H [International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 3-13 Sakura, Tsukuba, 305-0003 Japan (Japan)], E-mail: h-taka@rs.kagu.tus.ac.jp

2009-02-01

We study the transport properties of a p-InMnAs/n-InAs/Nb junction where a p-InMnAs can be regarded as a spin injector. Differential conductance of the n-InAs channel is measured as a function of injection current from p-InMnAs or from Nb at 20 mK. A conductance minimum appears at zero-bias voltage with no current injection. As the injection current from p-InMnAs increases, the minimum gradually disappears. This conductance behaviour is very different from that of the injection case from Nb. We also calculate the conductance in the n-InAs channel by taking account of the exchange field in the InAs channel that is induced by InMnAs ferromagnet. The difference between the conductance behaviours on injection current direction can be explained by the inverse proximity effect that the exchange field is also induced in the superconducting electrode.

Neutron Scattering from the Heisenberg Ferromagnets EuO and EuS

DEFF Research Database (Denmark)

Dietrich, O. W.; Als-Nielsen, Jens Aage; Passell, L.

1976-01-01

Inelastic neutron scattering has been used to investigate the spin dynamics of the isotropic Heisenberg ferromagnet EuO over a wide range of wave vectors and over a temperature range extending from 0.14 to 1.9TC. Below the ordering temperature spin-wave renormalization is found to agree well...... with the predictions of Dyson-Maleev theory (including the dynamical but not the kinematical interaction) when both exchange and dipolar couplings between the Eu2+ ions are taken into account. At temperatures near TC broadening of the spin-wave lines was observed. For hydrodynamic spin waves, the wave......-vector dependence of the linewidths is found to be consistent with the expectations of microscopic spin-wave theory and the temperature dependence with predictions based on dynamical scaling. At TC, linewidths were found to deviate from the q5/2 wave-vector dependence expected on the basis of dynamical scaling...

Superconducting Ferromagnetic Nanodiamond.

Science.gov (United States)

Zhang, Gufei; Samuely, Tomas; Xu, Zheng; Jochum, Johanna K; Volodin, Alexander; Zhou, Shengqiang; May, Paul W; Onufriienko, Oleksandr; Kačmarčík, Jozef; Steele, Julian A; Li, Jun; Vanacken, Johan; Vacík, Jiri; Szabó, Pavol; Yuan, Haifeng; Roeffaers, Maarten B J; Cerbu, Dorin; Samuely, Peter; Hofkens, Johan; Moshchalkov, Victor V

2017-06-27

Superconductivity and ferromagnetism are two mutually antagonistic states in condensed matter. Research on the interplay between these two competing orderings sheds light not only on the cause of various quantum phenomena in strongly correlated systems but also on the general mechanism of superconductivity. Here we report on the observation of the electronic entanglement between superconducting and ferromagnetic states in hydrogenated boron-doped nanodiamond films, which have a superconducting transition temperature T c ∼ 3 K and a Curie temperature T Curie > 400 K. In spite of the high T Curie , our nanodiamond films demonstrate a decrease in the temperature dependence of magnetization below 100 K, in correspondence to an increase in the temperature dependence of resistivity. These anomalous magnetic and electrical transport properties reveal the presence of an intriguing precursor phase, in which spin fluctuations intervene as a result of the interplay between the two antagonistic states. Furthermore, the observations of high-temperature ferromagnetism, giant positive magnetoresistance, and anomalous Hall effect bring attention to the potential applications of our superconducting ferromagnetic nanodiamond films in magnetoelectronics, spintronics, and magnetic field sensing.

Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

Science.gov (United States)

Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

2006-10-01

Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

Reduced filamentation in high power semiconductor lasers

DEFF Research Database (Denmark)

Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

1999-01-01

High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

Unraveling the Origin of Magnetism in Mesoporous Cu-Doped SnO₂ Magnetic Semiconductors.

Science.gov (United States)

Fan, Junpeng; Menéndez, Enric; Guerrero, Miguel; Quintana, Alberto; Weschke, Eugen; Pellicer, Eva; Sort, Jordi

2017-10-25

The origin of magnetism in wide-gap semiconductors doped with non-ferromagnetic 3d transition metals still remains intriguing. In this article, insights in the magnetic properties of ordered mesoporous Cu-doped SnO₂ powders, prepared by hard-templating, have been unraveled. Whereas, both oxygen vacancies and Fe-based impurity phases could be a plausible explanation for the observed room temperature ferromagnetism, the low temperature magnetism is mainly and unambiguously arising from the nanoscale nature of the formed antiferromagnetic CuO, which results in a net magnetization that is reminiscent of ferromagnetic behavior. This is ascribed to uncompensated spins and shape-mediated spin canting effects. The reduced blocking temperature, which resides between 30 and 5 K, and traces of vertical shifts in the hysteresis loops confirm size effects in CuO. The mesoporous nature of the system with a large surface-to-volume ratio likely promotes the occurrence of uncompensated spins, spin canting, and spin frustration, offering new prospects in the use of magnetic semiconductors for energy-efficient spintronics.

Anisotropy-based crystalline oxide-on-semiconductor material

Science.gov (United States)

McKee, Rodney Allen; Walker, Frederick Joseph

2000-01-01

A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

Bec Model of HIGH-Tc Superconductivity in Layered Cuprates

Science.gov (United States)

Lomnitz, M.; Villarreal, C.; de Llano, M.

2013-11-01

High-Tc superconductivity in layered cuprates is described in a BCS-BEC formalism with linearly-dispersive s- and d-wave Cooper pairs moving in quasi-2D finite-width layers around the CuO2 planes. This yields a closed formula for Tc involving the layer width, the Debye frequency, the pairing energy and the in-plane penetration depth. The new formula has no free parameters and reasonably reproduces empirical values of superconducting Tcs for 11 different layered superconductors over a wide doping regime including YBCO itself as well as other compounds like LSCO, BSCCO and TBCCO. In agreement with the London formalism, the formula also yields a fair description of the Tc dependence of the lower critical magnetic field in highly underdoped YBCO.

Electrical tuning of the band alignment and magnetoconductance in an n-type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode

Science.gov (United States)

Anh, Le Duc; Hai, Pham Nam; Tanaka, Masaaki

2018-03-01

We report a strong bias dependence of the magnetoconductance (MC) of a spin-Esaki diode composed of n+-type ferromagnetic semiconductor (FMS) (In,Fe)As and p+-type Be doped InAs grown on a p+-InAs (001) substrate by molecular beam epitaxy. When the bias voltage V is increased above 450 mV in the forward bias, we found that the MC, measured at 3.5 K under a magnetic field H of 1 T in the in-plane [110] direction, changes its sign from positive to negative and its magnitude rises rapidly from 0.5% at V fluid model, we explain both the magnitude and the anisotropy of the MC based on the evolution of the spin-Esaki diode's band profile with V. This analysis provides insights into the density of states and spin-polarization of the conduction band and the Fe-related impurity band in n-type FMS (In,Fe)As.

Magnetically-related properties of bismuth containing high Tc superconductors

Science.gov (United States)

Vezzoli, Gary C.; Chen, M. F.; Craver, F.; Safari, A.; Moon, B. M.; Lalevic, B.; Burke, Terence; Shoga, M.

1990-08-01

The effect of magnetic fields to 15 T on electrical resistance has been measured for the BiSrCaCuO superconductor at precise temperatures during the transition to the superconducting state from pre-onset conditions to essentially zero resistance conditions. The results show that the temperature at which the magnetic field causes a divergence in the resistance versus 1000/ T curve is approximately the same temperature as the value at which, during cooling, the positive Hall coefficient begins its abrupt descent to zero. This temperature gives the best measure of Tc. It is also shown that small oscillations of low frequency start near onset conditions, the amplitude of which at a given temperature is B-field dependent. Additionally, Hall effect studies as a function of temperature at 4 T in three separate experiments (including high Tc BiSrCaCu PbO of > 90% theoretical density) show that sharp delta-function-like peaks in + RH are observed near Tc and are superimposed on a broader maximum. The Hall data are explicable in terms of exciton formation and ionization. The bound holes associated with these excitons are believed to be the mediators producing Cooper-pairing, and scale very well with Tc for all the known high Tc oxides.

Presentation of test cases TC-2A, TC-2B, TC-2C, TC-2D - Twodimensional, incompressible, wall flows with separation

DEFF Research Database (Denmark)

Scheel Larsen, Poul

1988-01-01

The four test cases comprise the backfacing step at high Re-number (TC-2A) and low Re-number (TC-2B), a low Re-number boundary layer flow past a thin obstacle, fence-on-wall (TC-2C), and a high Re-number developed channel flow past a squareobstacle (TC-2D). Geometry, test conditions and available...

Preparation and properties of high-Tc Bi-oxide superconductors

International Nuclear Information System (INIS)

Maeda, H.

1989-01-01

Bulk superconductors of Pb-doped Bi-oxide system (BSCCO) dominated with the high-Tc phase have the critical transition temperature, Tc of 110 K, and the upper critical fields, H c2 of 140 T at OK and 60 T at 77 K. A highly dense and a highly oriented microstructure is obtained by inserting an intermediate uniaxial pressing process. The critical current density, Jc at 77 K in zero field, Jc (77K,OT) of some 5000 A/cm 2 can be easily obtained by this process, and the field dependence of Jc is also improved. Flexible high-Tc BSCCO ribbons with a Jc (77K,Ot) of 1850 A/cm 2 have been successfully prepared by the combined process of doctor blade casting, cold rolling and sintering. Aq-sheeted multifilamentary wires with 1330 filaments and tapes with 30 filaments have also been successfully fabricated and the 36-filament tape shows a Jc(77K,OT) of 1050 A/cm 2 . (Auth.). 7 refs.; 7 figs

Electrochemical investigations of high-Tc superconductors - low-temperature electrochemistry

International Nuclear Information System (INIS)

Lorenz, W.J.

1992-01-01

This research report presents a summary of results obtained by electrochemical investigations of high-Tc superconductors at room temperature and below the critical temperature (Tc). The studies were to reveal the behaviour of the ceramic superconducting materials at the interface between superconductor and ionic conductor. (MM) With 4 tabs., 8 figs [de

Measurement of glomerular filtration rate (GFR) with 99mTc-DTPA and semiconductors minidetectors: further validation of the method

International Nuclear Information System (INIS)

Mahlstedt, J.; Muehlbauer, J.; Schrott, K.H.; Wolf, F.

1982-01-01

A technique measuring external radiation with semiconductor minidetectors (SCM) by use of a portable solid state memory after bolus injection of 1mCi 99mTc-DTPA is described. The correlation of the calculated clearances to plasma creatinine levels and to endogenous creatinine clearance as well is satisfactory. This new technique is compared with a standard steady state technique (GFR-SS) using 51 Cr-EDTA. GFR-SCM is strongly correlated to GFR-SS as standard method, therefore the data provides substantial evidence that GFR-SCM is a reliable method of GFR measurement. The advantages are: fast availability of the test result especially when calculated by use of a minicomputer; ease of performance in routine work; convenience for the patient without need of compliance and low costs for the detector system

Ferromagnetism in with Fe implanted GaN and TiO{sub 2}; Ferromagnetismus in mit Fe implantierten GaN und TiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Talut, Georg

2009-12-15

In the present study it was tried to create a diluted magnetic semiconductor on the basis of GaN and TiO{sub 2} by means of ion beam implantation. In most cases, by characterization of structural and magnetic properties, it was possible to prove that the ferromagnetic state is related to either spinodal decomposition or secondary phase formation. In case of Fe implanted GaN spinodal decomposition, epitaxially oriented {alpha}-Fe or {epsilon}-Fe{sub 3}N nanocrystals were found to be responsible for the ferromagnetic behavior. In addition, the formation of {gamma}-Fe clusters was observed. Similarly, in TiO{sub 2} the ferromagnetism is related to the formation of epitaxially oriented {alpha}-Fe clusters. Dependent on the process parameters during annealing experiments several various secondary phases were formed. A critical examination of the references in literature points out the significance of usage of sensitive and complementary probe techniques (like CEMS, SQUID, XRD, EXAFS), in order to be able to discuss the origin of ferromagnetism in the field of diluted magnetic semiconductors in a proper way. (orig.)

Preparation of Mn doped CeO{sub 2} nanoparticles with enhanced ferromagnetism

Energy Technology Data Exchange (ETDEWEB)

Ravi, S., E-mail: sravi@mepcoeng.ac.in; Winfred Shashikanth, F.

2017-06-15

Spherical-like CeO{sub 2} and Mn-doped CeO{sub 2} using 6-aminohexanoic acid as surfactant exhibit enhanced ferromagnetism. The optical absorption spectra reveal a red shift with a band gap of 2.51 eV. The mechanics of ferromagnetism and the red shift were analyzed. These results provide a promising platform for developing a dilute magnetic semiconductor in spintronics. - Highlights: • Pure and Mn-doped CeO{sub 2} is prepared with aminohexanoic acid as capping. • They exhibit wide optical absorption with red-shift in their band gap. • Mn-doped CeO{sub 2} nanoparticle exhibit hysteresis at room temperature. • Results were promising to use in spintronics and opto-electronics field.

Bi-Polaron Condensation in High Tc Superconductors

International Nuclear Information System (INIS)

Ranninger, J.

1995-01-01

On the basis of optical measurements-, photoemission-, EXAFS- and neutron scattering-experiments we conclude that itinerant valence electrons coexist with localized bi-polarons.Entering the metallic phase upon chemical doping, a charge transfer between the two electronic subsystems is triggered off. We show that as the temperature is lowered towards Tc this process leads to a delocalization of bi-polarons due to a precursor effect of superfluidity of those bi-polarons. Upon entering the superconducting phase, these bipolarons ultimately condense into a superfluid state which is expected to largely determine the superconducting properties of high Tc materials. (authors)

Understanding lattice defects to influence ferromagnetic order of ZnO nanoparticles by Ni, Cu, Ce ions

Energy Technology Data Exchange (ETDEWEB)

Verma, Kuldeep Chand, E-mail: dkuldeep.physics@gmail.com [Department of Physics, Panjab University, Chandigarh 160014 (India); Kotnala, R.K., E-mail: rkkotnala@gmail.com [CSIR-National Physical Laboratory, New Delhi 110012 (India)

2017-02-15

Future spintronics technologies based on diluted magnetic semiconductors (DMS) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. It remains unclear, however, whether the ferromagnetism in DMS is intrinsic - a precondition for spintronics - or due to dopant clustering. For this, we include a simultaneous doping from transition metal (Ni, Cu) and rare earth (Ce) ions in ZnO nanoparticles that increase the antiferromagnetic ordering to achieve high-T{sub c} ferromagnetism. Rietveld refinement of XRD patterns indicate that the dopant ions in ZnO had a wurtzite structure and the dopants, Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions, are highly influenced the lattice constants to induce lattice defects. The Ni, Cu, Ce ions in ZnO have nanoparticles formation than nanorods was observed in pure sample. FTIR involve some organic groups to induce lattice defects and the metal-oxygen bonding of Zn, Ni, Cu, Ce and O atoms to confirm wurtzite structure. Raman analysis evaluates the crystalline quality, structural disorder and defects in ZnO lattice with doping. Photoluminescence spectra have strong near-band-edge emission and visible emission bands responsible for defects due to oxygen vacancies. The energy band gap is calculated using Tauc relation. Room temperature ferromagnetism has been described due to bound magnetic polarons formation with Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions in ZnO via oxygen vacancies. The zero field and field cooling SQUID measurement confirm the strength of antiferromagnetism in ZnO. The field cooling magnetization is studied by Curie-Weiss law that include antiferromagnetic interactions up to low temperature. The XPS spectra have involve +3/+4 oxidation states of Ce ions to influence the observed ferromagnetism. - Graphical abstract: The lattice defects/vacancies attributed by Ni and Ce ions in the wurtzite ZnO structure are responsible in high T{sub c} -ferromagnetism due to long-range magnetic

First-principles study on ferromagnetism in double perovskite Sr2AlTaO6 doped with Cu or Zn at B sites

Science.gov (United States)

Li, Y. D.; Wang, C. C.; Guo, Y. M.; Yu, Y.; Lu, Q. L.; Huang, S. G.; Li, Q. J.; Wang, H.; Cheng, R. L.; Liu, C. S.

2018-05-01

The possibilities of ferromagnetism induced by nonmagnetic dopants (Cu, Zn) in double perovskite Sr2AlTaO6 at B sites are investigated by density functional theory. Calculations reveal that substitutions at Ta-site tend to form high spin electronic configurations and could induce ferromagnetism which can be attributed to the hole-mediated p- d hybridization between Cu (or Zn) eg states and the neighboring O 2p states. The dopants preferably substitute at Al-site and adopt low spin electronic structures. Due to the smaller hole concentration and weaker covalent intensity, Sr2AlTaO6 with dopants at Al-site exhibits p-type metallic semiconductors without spin polarization.

Doping dependent room-temperature ferromagnetism and structural properties of dilute magnetic semiconductor ZnO:Cu2+ nanorods

International Nuclear Information System (INIS)

Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

2009-01-01

Copper doped ZnO nanoparticles were synthesized by the chemical technique based on the hydrothermal method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) for different doping percentages of Cu 2+ (1-10%). TEM/SEM images showed formation of uniform nanorods, the aspect ratio of which varied with doping percentage of Cu 2+ . The wurtzite structure of ZnO gradually degrades with the increasing Cu 2+ doping concentration and an additional CuO associated diffraction peak was observed above 8% of Cu 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Cu 2+ doping concentrations was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong room-temperature ferromagnetic behavior, however at higher doping percentage of copper the ferromagnetic behavior was suppressed and paramagnetic nature was enhanced.

Structural, morphological and magnetic analysis of Cd–Co–S dilute magnetic semiconductor nanofilms

Energy Technology Data Exchange (ETDEWEB)

Kumar, Suresh [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh 173234 (India); Negi, N.S. [Department of Physics, Himachal Pradesh University, Summer Hill, Shimla, Himachal Pradesh 171005 (India); Katyal, S.C. [Department of Physics, Jaypee Institute of Information Technology, Sec-128, Noida, Uttar Pradesh 201301 (India); Sharma, Pankaj, E-mail: pankaj.sharma@juit.ac.in [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh 173234 (India); Sharma, Vineet [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh 173234 (India)

2014-10-01

Cd{sub 1−x}Co{sub x}S dilute magnetic semiconductor nanofilms (0≤x≤0.08 at%) deposited by chemical bath deposition have been investigated using grazing angle x-ray diffraction, atomic force microscopy and vibrating sample magnetometer. The introduction of Co{sup 2+} ions in CdS structure induces structural disorders and hence, results in degradation of crystallinity. The crystallite size, interplanar spacing and lattice parameter ratio decrease with increasing Co{sup 2+} concentration in CdS. The diamagnetic state of CdS disappears with increase in Co concentration and films with x>0.02 exhibit ferromagnetism. This may be explained in terms of the spin–orbit interactions and Co{sup 2+} ion induced the lattice defects and phase separation. - Highlights: • Cd{sub 1−x}Co{sub x}S dilute magnetic semiconductor nanofilms (0≤x≤0.08 at%) deposited by CBD. • The diamagnetic state of CdS vanishes for x=0.02. • For x>0.02, dilute magnetic semiconductor nanofilms shows a ferromagnetic state.

Ni substitution effect on magnetic and transport properties in metallic ferromagnet Co3Sn2S2

Science.gov (United States)

Kubodera, Takashi; Okabe, Hirotaka; Kamihara, Yoichi; Matoba, Masanori

2006-05-01

We investigated the magnetic and transport properties of polycrystalline (Co1-xNix)3Sn2S2(0⩽x⩽1) to ascertain the magnetism of the new metallic ferromagnet Co3Sn2S2. In Co3Sn2S2 magnetization does not saturate up to 5.5 T at 10 K, and the estimated saturation moment ( ps) is small ( ≅0.2μB per Co atom). In ( Co1-xNix)3Sn2S2, the electrical resistivity shows metallic behavior without a hump but has a kink at TC. The TC and magnetic susceptibility gradually decrease with increasing x, and there is no antiferromagnetic phase throughout the full range of composition. These results indicate that Co3Sn2S2 is a weak itinerant ferromagnet; while, the same order of the Rhodes-Wohlfarth pc/ps value as CoS2 suggests the existence of a localized moment.

Temperature profile evolution in quenching high-Tc ...

Indian Academy of Sciences (India)

Abstract. Irreversible normal zones leading to quench is an important aspect of high-temperature superconductors (HTS) in all practical applications. As a consequence of quench, transport current gets diverted to the matrix stabilizer material of the high-Tc composite and causes Joule heating till the original conditions are ...

A close correlation between induced ferromagnetism and oxygen deficiency in Fe doped In2O3

International Nuclear Information System (INIS)

Singhal, R.K.; Samariya, A.; Kumar, Sudhish; Sharma, S.C.; Xing, Y.T.; Deshpande, U.P.; Shripathi, T.; Saitovitch, E.

2010-01-01

We report on the reversible manipulation of room temperature ferromagnetism in Fe (5%) doped In 2 O 3 polycrystalline magnetic semiconductor. The X-ray diffraction and photoemission measurements confirm that the Fe ions are well incorporated into the lattice, substituting the In 3+ ions. The magnetization measurements show that the host In 2 O 3 has a diamagnetic ground state, while it shows weak ferromagnetism at 300 K upon Fe doping. The as-prepared sample was then sequentially annealed in hydrogen, air, vacuum and finally in air. The ferromagnetic signal shoots up by hydrogenation as well as vacuum annealing and bounces back upon re-annealing the samples in air. The sequence of ferromagnetism shows a close inter-relationship with the behavior of oxygen vacancies (V o ). The Fe ions tend to a transform from 3+ to 2+ state during the giant ferromagnetic induction, as revealed by photoemission spectroscopy. A careful characterization of the structure, purity, magnetic, and transport properties confirms that the ferromagnetism is due to neither impurities nor clusters but directly related to the oxygen vacancies. The ferromagnetism can be reversibly controlled by these vacancies while a parallel variation of carrier concentration, as revealed by resistance measurements, appears to be a side effect of the oxygen vacancy variation.

Mechanisms of conventional and high Tc superconductivity

International Nuclear Information System (INIS)

Kresin, V.L.; Morawitz, H.; Wolf, S.A.

1993-01-01

This book gives a careful and objective review of theories of superconductivity in traditional superconductors, organics, and high Tc cuprates. Of course, the authors do still present their own theories of cuprate superconductivity, but only in the final chapter after other possibilities have been discussed. The book should be especially useful for researchers entering the field of high Tc superconductivity. The reviews of photon mediated pairing and strong coupling theory are very welcome, since much of this material has not been reviewed since the classic 1969 volume edited by Parks. In particular the authors dispel the various myths that phonon mediated pairing leads to upper bounds on Tc. In addition to phonon mediated pairing the book discussed in detail pairing due to exchange of acoustic (demon) plasmons, excitons, or magnetic fluctuations. There have been so many diverse mechanisms based on strong correlation and large U Hubbard models that a book like this can only discuss a limited selection of the main contenders. In particular here the emphasis on Fermi liquid based models no doubt reflects the authors' own point of view. A whole chapter discusses the concepts of induced superconductivity, in the proximity effect, and its application to materials with several different electronic subsystems

Ferromagnetic (Ga,Mn)As layers and nanostructures: control of magnetic anisotropy by strain engineering

Energy Technology Data Exchange (ETDEWEB)

Wenisch, Jan

2008-07-01

This work studies the fundamental connection between lattice strain and magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As. The first chapters provide a general introduction into the material system and a detailed description of the growth process by molecular beam epitaxy. A finite element simulation formalism is developed to model the strain distribution in (Ga,Mn)As nanostructures is introduced and its predictions verified by high-resolution X-ray diffraction methods. The influence of lattice strain on the magnetic anisotropy is explained by an magnetostatic model. A possible device application is described in the closing chapter. (orig.)

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges.

Science.gov (United States)

Cheng, Ji; Jiang, Shengxiang; Zhang, Yan; Yang, Zhijian; Wang, Cunda; Yu, Tongjun; Zhang, Guoyi

2017-05-02

The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work, nanoscale GaN:Mn wires were grown on the top of GaN ridges by metalorganic chemical vapor deposition (MOCVD), and the superconducting quantum interference device (SQUID) magnetometer shows that its ferromagnetism is greatly enhanced. Secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) reveal an obvious increase of Mn composition in the nanowire part, and transmission electron microscopy (TEM) and EDS mapping results further indicate the correlation between the abundant stacking faults (SFs) and high Mn doping. When further combined with the micro-Raman results, the magnetism in GaN:Mn might be related not only to Mn concentration, but also to some kinds of built-in defects introduced together with the Mn doping or the SFs.

Half-metallic ferromagnetism in Fe-doped Zn3P2 from first-principles calculations

International Nuclear Information System (INIS)

Jaiganesh, G.; Jaya, S. Mathi

2014-01-01

Using the first-principles calculations based on the density functional theory, we have studied the magnetism and electronic structure of Fe-doped Zinc Phosphide (Zn 3 P 2 ). Our results show that the half-metallic ground state and ferromagnetic stability for the small Fe concentrations considered in our study. The stability of the doped material has been studied by calculating the heat of formation and analyzing the minimum total energies in nonmagnetic and ferromagnetic phases. A large value of the magnetic moment is obtained from our calculations and our calculation suggests that the Fe-doped Zn 3 P 2 may be a useful material in semiconductor spintronics

Vortex Flipping in Superconductor-Ferromagnet Spin Valve Structures

Science.gov (United States)

Patino, Edgar J.; Aprili, Marco; Blamire, Mark; Maeno, Yoshiteru

2014-03-01

We report in plane magnetization measurements on Ni/Nb/Ni/CoO and Co/Nb/Co/CoO spin valve structures with one of the ferromagnetic layers pinned by an antiferromagnetic layer. In samples with Ni, below the superconducting transition Tc, our results show strong evidence of vortex flipping driven by the ferromagnets magnetization. This is a direct consequence of proximity effect that leads to vortex supercurrents leakage into the ferromagnets. Here the polarized electron spins are subject to vortices magnetic field occasioning vortex flipping. Such novel mechanism has been made possible for the first time by fabrication of the F/S/F/AF multilayered spin valves with a thin-enough S layer to barely confine vortices inside as well as thin-enough F layers to align and control the magnetization within the plane. When Co is used there is no observation of vortex flipping effect. This is attributed to Co shorter coherence length. Interestingly instead a reduction in pinning field of about 400 Oe is observed when the Nb layer is in superconducting state. This effect cannot be explained in terms of vortex fields. In view of these facts any explanation must be directly related to proximity effect and thus a remarkable phenomenon that deserves further investigation. Programa Nacional de Ciencias Basicas COLCIENCIAS (No. 120452128168).

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

Science.gov (United States)

Pasanai, K.

2017-01-01

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed.

Probe high-Tc Superconductors by neutron scattering

International Nuclear Information System (INIS)

Fauque, B.

2007-10-01

This research thesis explores two aspects of the phase diagram of high critical temperature superconductors: the evolution of AF correlations and the nature of the pseudo-gap phase. The author presents the problematic associated with these particular semiconductors, describes the neutron diffusion probe used in this study, and presents the three families of semiconductors investigated during this research: Bi 2 Sr 2 CaCu 2 O 8+x , YBa 2 Cu 3 O 6+x and La 2-x Sr x CuO 4 . He reports the results of the investigation of the spin dynamics in the Bi 2 Sr 2 CaCu 2 O 8+x . He reports a detailed investigation of the magnetic cross section associated with different types of non conventional magnetic orders proposed as candidates for the pseudo-gap phase. He reports and comments the results obtained for the pseudo-gap phase for the YBa 2 Cu 3 O 6+x and La 2-x Sr x CuO 4 families. Finally, the author discusses the consequences of the obtained results for the description of the diagram phase of high critical temperature semiconductors

Density-dependent phonoriton states in highly excited semiconductors

International Nuclear Information System (INIS)

Nguyen Hong Quang; Nguyen Minh Khue; Nguyen Que Huong

1995-09-01

The dynamical aspects of the phonoriton state in highly-photoexcited semiconductors is studied theoretically. The effect of the exciton-exciton interaction and nonbosonic character of high-density excitons are taken into account. Using Green's function method and within the Random Phase Approximation it is shown that the phonoriton dispersion and damping are very sensitive to the exciton density, characterizing the excitation degree of semiconductors. (author). 18 refs, 3 figs

Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

Science.gov (United States)

Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

2015-12-02

Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics.

Analysis of 99mTc-labeled radiopharmaceuticals by high-performance liquid chromatography

International Nuclear Information System (INIS)

Muto, Toshio

1990-01-01

High-performance liquid chromatography (HPLC) equiped with on line radiometric and optical detectors (i.e. radio-HPLC) have been applied to the radiochemical analysis of commonly-used 99m Tc-radio pharma ceuticals with a view point to check the radiochemical purities of the compounds. Chromatographic conditions were determined by examination of the types of column, mobile phase and pH. An aqueous size-exclusion (Shim-pack Diol-300) and reversed-phase column (Zorbax-ODS) were found to be suitable for 99m Tc-HSA and the other 99m Tc-agents, respectively. The analysis of low molecular weight 99m Tc-agents (e.g. 99m Tc-DTPA, 99m Tc-DMSA, 99m Tc-pyrophosphate, 99m Tc-phytic acid, 99m Tc-MDS, 99m Tc-HMDP) were done by reversed-phaseion pairing chromatography using a optimized mobile phase consisted on a mixture of 50 mM phosphate buffer (pH 7.0) and 2 mM TBA (tetra nbutyl) ammonium hydroxide) in 30 % methanol. The mobile phases for analysis of medium molecular weight 99m Tc-HSA were consisted of a mixture of 50 mM phosphate buffer (ph 7.0) in 30 % methanol, and a mixtures of 1 % SDS (sodium dodecyl sulfonate) in Tris buffer (pH. 7.0), respectively. It was apparent from the radio-chromatograms obtained from these chromatographic conditions, that impurity of 99m TcO 4 was observed in 99m Tc-pyrophosphate, 99m Tc-phytic acid, 99m Tc-MDP, 99m Tc-HMDP, and impurities of 99m Tc-labeled species and 99m TcO 4 , were observed in 99m Tc-HIDA, 99m Tc-HIDA, 99m Tc-HSA. The radiochemical impurities of the 99m Tc-radiopharmaceuticals were ranged between 90 and 100 %. From these results, radio-HPLC has been shown to be suitable method for analysis of 99m Tc-radiopharmaceuticals, with rapidity and excellent precision. (author)

Cryogenic semiconductor high-intensity radiation monitors

International Nuclear Information System (INIS)

Palmieri, V.G.; Bell, W.H.; Borer, K.; Casagrande, L.; Da Via, C.; Devine, S.R.H.; Dezillie, B.; Esposito, A.; Granata, V.; Hauler, F.; Jungermann, L.; Li, Z.; Lourenco, C.; Niinikoski, T.O.; Shea, V. O'; Ruggiero, G.; Sonderegger, P.

2003-01-01

This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux

Ferromagnetism and nonmetallic transport of thin-film α-FeSi(2): a stabilized metastable material.

Science.gov (United States)

Cao, Guixin; Singh, D J; Zhang, X-G; Samolyuk, German; Qiao, Liang; Parish, Chad; Jin, Ke; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E Andrew; Biegalski, Michael; Ward, T Z; Mandrus, David; Stocks, G M; Gai, Zheng

2015-04-10

A metastable phase α-FeSi_{2} was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on α-FeSi_{2} (111) thin films, while the bulk material of α-FeSi_{2} is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α-FeSi_{2} obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

Direct measurement of the long-range p -d exchange coupling in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure

Science.gov (United States)

Akimov, I. A.; Salewski, M.; Kalitukha, I. V.; Poltavtsev, S. V.; Debus, J.; Kudlacik, D.; Sapega, V. F.; Kopteva, N. E.; Kirstein, E.; Zhukov, E. A.; Yakovlev, D. R.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Korenev, V. L.; Kusrayev, Yu. G.; Bayer, M.

2017-11-01

The exchange interaction between magnetic ions and charge carriers in semiconductors is considered to be a prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range p -d exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10-nm-thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10 nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift ΔS on the external magnetic field B . We show that in a strong magnetic field, ΔS is a linear function of B with an offset of Δp d=50 -100 μ eV at zero field from the FM induced effective exchange field. On the other hand, the s -d exchange interaction between conduction band electrons and FM, as well as the p -d contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.

Plasma resonance and flux dynamics in layered high-Tc superconductors

DEFF Research Database (Denmark)

Pedersen, Niels Falsig; Sakai, S.

2000-01-01

Flux dynamics of layered high Tc superconductors are considered with special emphasis on the small oscillation modes. In particular we find the dispersion relation for the plasma modes and discuss the spectra to be observed in microwave experiments.......Flux dynamics of layered high Tc superconductors are considered with special emphasis on the small oscillation modes. In particular we find the dispersion relation for the plasma modes and discuss the spectra to be observed in microwave experiments....

Gate-voltage control of equal-spin Andreev reflection in half-metal/semiconductor/superconductor junctions

Energy Technology Data Exchange (ETDEWEB)

Wu, Xiuqiang, E-mail: xianqiangzhe@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Meng, Hao, E-mail: menghao1982@shu.edu.cn [School of Physics and Telecommunication Engineering, Shanxi University of Technology, Hanzhong 723001 (China)

2016-04-22

With the Blonder–Tinkham–Klapwijk (BTK) approach, we investigate conductance spectrum in Ferromagnet/Semiconductor/Superconductor (FM/Sm/SC) double tunnel junctions where strong Rashba spin–orbit interaction (RSOI) is taken into account in semiconductors. For the half-metal limit, we find that the in-gap conductance becomes finite except at zero voltage when inserting a ferromagnetic insulator (FI) at the Sm/SC interface, which means that the appearance of a long-range triplet states in the half-metal. This is because of the emergence of the unconventional equal-spin Andreev reflection (ESAR). When the FI locates at the FM/Sm interface, however, we find the vanishing in-gap conductance due to the absence of the ESAR. Moreover, the non-zero in-gap conductance shows a nonmonotonic dependence on RSOI which can be controlled by applying an external gate voltage. Our results can be used to generate and manipulate the long-range spin triplet correlation in the nascent field of superconducting spintronics. - Highlights: • We study the equal-spin Andreev reflection in half-metal/semiconductor/superconductor (HM/Sm/SC) junctions. • The equal-spin Andreev reflection appearance when inserting a ferromagnetic insulator at the Sm/SC interface. • The finite in-gap conductance is attributed to the emergence of the equal-spin Andreev reflection. • The finite in-gap conductance shows a nonmonotonic dependence on Rashba spin–orbit interaction. • The finite in-gap conductance can be controlled by applying an external gate voltage.

Foreword: Focus on Superconductivity in Semiconductors

Directory of Open Access Journals (Sweden)

Yoshihiko Takano

2008-01-01

Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high-TC

Mn-AlInN: a new diluted magnetic semiconductor

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar; Sharif, Rehana; Zhu, J.J.

2009-01-01

Mn ions have been incorporated into MOCVD grown Al 1-x In x N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at ∝260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T c above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

On the application of High-Tc superconductors in power coils and transformers

NARCIS (Netherlands)

Chevtchenko, O.A.

2002-01-01

In this study, the electro-magnetic properties of high-Tc tapes and coils are investigated. The focus is on Bi-2223/Ag tapes with non-twisted superconducting filaments as these are the only high-Tc superconductors at present available in sufficient length for practical applications. The study is

Temperature dependence of magnetically dead layers in ferromagnetic thin-films

Directory of Open Access Journals (Sweden)

M. Tokaç

2017-11-01

Full Text Available Polarized neutron reflectometry has been used to study interface magnetism and magnetic dead layers in model amorphous CoFeB:Ta alloy thin-film multilayers with Curie temperatures tuned to be below room-temperature. This allows temperature dependent variations in the effective magnetic thickness of the film to be determined at temperatures that are a significant fraction of the Curie temperature, which cannot be achieved in the material systems used for spintronic devices. In addition to variation in the effective magnetic thickness due to compositional grading at the interface with the tantalum capping layer, the key finding is that at the interface between ferromagnetic film and GaAs(001 substrate local interfacial alloying creates an additional magnetic dead-layer. The thickness of this magnetic dead-layer is temperature dependent, which may have significant implications for elevated-temperature operation of hybrid ferromagnetic metal-semiconductor spintronic devices.

Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

2013-01-01

The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

Internal friction around Tc connected with superconductivity in high Tc superconductors

International Nuclear Information System (INIS)

Wang Yening

1993-01-01

Internal friction and ultrasonic measurements show that there always exists a phase-like transition (PLT) characterized by the jump of lattice parameters at tens degrees above Tc in superconducting YBaCuO, BiSrCaCuO and TlBaCaCuO. Ferroelastic loops and shape memory effect associated with elastic softening invariably occur at the PLT temperature, showing the characteristics of thermoelastic martensitic transition. Internal frictions in KHz of Bi(Pb)SrCaCuO reveal a static hysteretic plateau (Qp -1 ) above Tc that drops linearly with temperature below Tc. The Qp -1 of YBaCuO decreases with decreasing oxygen content. The origin of the hysteretic Qp -1 is attributed to the lattice distortions around the carriers. (orig.)

Effect of milking efficiency on Tc-99 content of Tc-99m derived from Tc-99m generators

International Nuclear Information System (INIS)

Bonnyman, J.

1983-01-01

Tc-99m obtained by separation from its parent Mo-99 always contains Tc-99 produced by decay of Tc-99m and Mo-99. Factors effecting the Tc-99/Tc-99m ratios are discussed. An HPLC method has been developed to measure the 99 TcO 4- content of sodium pertechnetate from generators with a detection limit of 0.9 ng Tc-99 for a 500 μl/ aliquot of TcO 4- -99m. First eluates of 10 chromatograph-ic generators gave Tc-99/Tc-99m ratios ranging from 3.5-46 ng Tc/mCi Tc-99m measured at the time of milking. The measurements indicate that Tc-99/Tc-99m ratios high enough to cause adverse labelling effects could be found in 'instant pertechnetate' and in the first eluate from Tc-99m generators for the activities normally used in radiopharmaceutical production

High brightness semiconductor lasers with reduced filamentation

DEFF Research Database (Denmark)

McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

1999-01-01

High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

International Nuclear Information System (INIS)

Zhong Guohua; Zhang Kang; He Fan; Ma Xuhang; Lu Lanlan; Liu Zhuang; Yang Chunlei

2012-01-01

Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

Metallorganic precursors route for high Tc superconducting materials and related phases

International Nuclear Information System (INIS)

Beltran-porter, D.; Gonzalez, A.; Sanchis, M.J.; Beltran-porter, A.; Ibanez, R.; Sapina, F.

1991-01-01

The adequacy of the precursors approach for high Tc superconducting materials is validated by means of three examples of a new synthesis of mixed oxides which are directly related to the high Tc superconductors. The synthesis temperature is lowered significantly, and the need for extending the classic 'building block' approach is shown. The hypothesis that topochemical reactions from molecular to extended solids are posssible is proven. 28 refs

Giant magnetocaloric effect from reverse martensitic transformation in Ni–Mn–Ga–Cu ferromagnetic shape memory alloys

International Nuclear Information System (INIS)

Sarkar, Sudip Kumar; Sarita; Babu, P.D.; Biswas, Aniruddha; Siruguri, Vasudeva; Krishnan, Madangopal

2016-01-01

In an effort to produce Giant Magnetocaloric effect (GMCE) near room temperature, in a first ever such study, the austenite transformation temperature (A_s) was fine tuned to ferromagnetic Curie temperature (T_C) in Ferromagnetic Shape Memory Alloys (FSMA) and a large GMCE of ΔSM = −81.8 J/Kg-K was achieved in Ni_5_0Mn_1_8_._5Cu_6_._5Ga_2_5 alloy during reverse martensitic transformation (heating cycle) for a magnetic field change of 9 T at 303 K. Fine tuning of A_s with T_C was achieved by Cu substitution in Ni_5_0Mn_2_5_−_xCu_xGa_2_5 (0 ≤ x ≤ 7.0)-based FSMAs. Characterizations of these alloys were carried out using Optical and Scanning Electron Microscopy, X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC) and DC magnetization measurements. Addition of Cu to stoichiometric Heusler type Ni_2MnGa increases the martensitic transformation temperatures and decreases T_C. Concurrently, ΔSM increases with Cu addition and peaks at 6.5 at% Cu for which there is a virtual overlap between T_C and A_s. Maximum Refrigerant Capacity (RCP) of 327.0 J/Kg was also achieved in the heating cycle for 9 T field change at 303 K. Corresponding values for the cooling cycle measurements (measured during forward transformation) were 30.4 J/Kg-K and 123.5 J/Kg respectively for the same 6.5 at% Cu sample under the same thermo-magnetic conditions. - Highlights: • A_s was fine tuned to T_C in Cu substituted Ni_5_0Mn_2_5_−_xCu_xGa_2_5 (0 ≤ x ≤ 7.0) alloys. • MT temperature increases with Cu addition while T_C decreases. • A virtual overlapping of A_s with T_C was found in Ni_5_0Mn_1_8_._5Cu_6_._5Ga_2_5 alloys. • ΔSM = −81.8 J/Kg-K achieved from reverse MT for Δ(μ_0H) = 9 T at 303 K. • A highest RCP value of 94.6 J/Kg was observed for Δ(μ_0H) = 5 T in Cu:6.5 alloys.

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

Energy Technology Data Exchange (ETDEWEB)

Pasanai, K., E-mail: krisakronmsu@gmail.com

2017-01-15

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed. - Highlights: • The conductance spectra of a FM/FM/FM junction were calculated. • The conductance spectra were suppressed by the exchange energy. • The exchange energy and the potential strength play similar roles in the junctions.

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

International Nuclear Information System (INIS)

Pasanai, K.

2017-01-01

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed. - Highlights: • The conductance spectra of a FM/FM/FM junction were calculated. • The conductance spectra were suppressed by the exchange energy. • The exchange energy and the potential strength play similar roles in the junctions.

Inhomogeneous distribution of manganese atoms in ferromagnetic ZnSnAs{sub 2}:Mn thin films on InP revealed by three-dimensional atom probe investigation

Energy Technology Data Exchange (ETDEWEB)

Uchitomi, Naotaka, E-mail: uchitomi@nagaokaut.ac.jp; Inoue, Hiroaki; Kato, Takahiro; Toyota, Hideyuki [Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka 940-2188 (Japan); Uchida, Hiroshi [Toshiba Nanoanalysis Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan)

2015-05-07

Atomic-scale Mn distributions in ferromagnetic ZnSnAs{sub 2}:Mn thin films grown on InP substrates have been studied by applying three-dimensional atom probe (3DAP) microscopy. It is found that Mn atoms in cross-sectional 3DAP maps show the presence of inhomogeneities in Mn distribution, which is characteristic patterns of a spinoidal decomposition phase with slightly high and low concentration regions. The high Mn concentration regions are expected to be coherently clustered MnAs in the zinc-blende structure, resulting in the formation of Mn-As random connecting patterns. The origin of room-temperature ferromagnetism in ZnSnAs{sub 2}:Mn on InP can be well explained by the formation of atomic-scale magnetic clustering by spinoidal decomposition without breaking the continuity of the zinc-blende structure, which has been suggested by previous theoretical works. The lattice-matching between magnetic epi-layers and substrates should be one of the most important factors to avoid the formation of secondary hexagonal MnAs phase precipitates in preparing ferromagnetic semiconductor thin films.

In-house cyclotron production of high-purity Tc-99m and Tc-99m radiopharmaceuticals.

Science.gov (United States)

Martini, Petra; Boschi, Alessandra; Cicoria, Gianfranco; Zagni, Federico; Corazza, Andrea; Uccelli, Licia; Pasquali, Micòl; Pupillo, Gaia; Marengo, Mario; Loriggiola, Massimo; Skliarova, Hanna; Mou, Liliana; Cisternino, Sara; Carturan, Sara; Melendez-Alafort, Laura; Uzunov, Nikolay M; Bello, Michele; Alvarez, Carlos Rossi; Esposito, Juan; Duatti, Adriano

2018-05-30

In the last years, the technology for producing the important medical radionuclide technetium-99m by cyclotrons has become sufficiently mature to justify its introduction as an alternative source of the starting precursor [ 99m Tc][TcO 4 ] - ubiquitously employed for the production of 99m Tc-radiopharmaceuticals in hospitals. These technologies make use almost exclusively of the nuclear reaction 100 Mo(p,2n) 99m Tc that allows direct production of Tc-99m. In this study, it is conjectured that this alternative production route will not replace the current supply chain based on the distribution of 99 Mo/ 99m Tc generators, but could become a convenient emergency source of Tc-99m only for in-house hospitals equipped with a conventional, low-energy, medical cyclotron. On this ground, an outline of the essential steps that should be implemented for setting up a hospital radiopharmacy aimed at the occasional production of Tc-99m by a small cyclotron is discussed. These include (1) target production, (2) irradiation conditions, (3) separation/purification procedures, (4) terminal sterilization, (5) quality control, and (6) Mo-100 recovery. To address these issues, a comprehensive technology for cyclotron-production of Tc-99m, developed at the Legnaro National Laboratories of the Italian National Institute of Nuclear Physics (LNL-INFN), will be used as a reference example. Copyright © 2018 Elsevier Ltd. All rights reserved.

Scavenging of Tc(V) formed by I.T. in 95mTcO4- solutions

International Nuclear Information System (INIS)

Ianoz, E.; Colin, M.; Kosinski, M.

1988-01-01

The chemical effects of the I.T. of 95m Tc in 95m TcO 4 - have been studied in chelating ligand solutions. At high pH and at high concentration of 1,4,8,11-tetraazacyclotetradecane and 1,4-dithia-8, 11-diazacyclotetradecane, the retention of 95g Tc is about 20% and the unretained 95g Tc appears preponderantly (ca. 73%) as [TcO 2 L] + complexes. In glucoheptonate solution, the 95g Tc retention remains practically the same (22%) but the unretained 95g Tc is found in high proportion (73%) as [TcObis(glucoheptonate)] - . The added ligands are very good scavengers for 95g Tc(V). A comparison is made between 95g Tc species formed by the I.T. in 95m TcO 4 - and 99m Tc species resulting from the chemical reduction of 99m TcO 4 - . (orig.)

Mn-AlInN: a new diluted magnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul; Ali, Akbar [Quaid-i-Azam University, Advance Materials Physics Laboratory, Physics Department, Islamabad (Pakistan); Sharif, Rehana [University of Engineering and Technology, Department of Physics, Lahore (Pakistan); Zhu, J.J. [Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Beijing (China)

2009-09-15

Mn ions have been incorporated into MOCVD grown Al{sub 1-x}In{sub x}N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at {proportional_to}260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T{sub c} above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

Theory of magnetic anisotropy in III.sub.1-x./sub.Mn.sub.x./sub.V ferromagnets

Czech Academy of Sciences Publication Activity Database

Abolfath, M.; Jungwirth, Tomáš; Brum, J.; MacDonald, A. H.

2001-01-01

Roč. 63, č. 5 (2001), s. 054418-1 - 054418-14 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10; GA ČR GA202/98/0085 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * magnetic anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.070, year: 2001

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

Energy Technology Data Exchange (ETDEWEB)

Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

2014-05-28

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

Tumor affinity of technetium-99m labeled radiopharmaceuticals. II. Sup(99m)Tc-Sn-diphosphonate (sup(99m)Tc-EHDP), sup(99m)Tc-Sn-dimercaptosuccinic acid (sup(99m)Tc-DMSA), sup(99m)Tc-Sn-diethyl stilbestrol diphosphate (sup(99m)Tc-DSDP)

Energy Technology Data Exchange (ETDEWEB)

Itoh, K; Kobayashi, S; Hisada, K; Tonami, N [Kanazawa Univ. (Japan). School of Medicine; Ando, A

1976-10-01

The authors have examined the tumor affinity of various sup(99m)Tc-labelled radiopharmaceuticals to Ehrlich's tumor for the purpose of delineating human malignant neoplasm positively. The biologic distributions of sup(99m)Tc-Sn-diphosphonate (sup(99m)Tc-EHDP), sup(99m)Tc-Sn-dimercaptosuccinic acid (sup(99m)Tc-DMSA) and sup(99m)Tc-Sn-diethyl stilbestrol diphosphate (sup(99m)Tc-DSDP, sup(99m)Tc-Honvan) are included as the second report on the tumor affinity of Ehrlich-bearing mice. Tumor concentration of sup(99m)Tc-EHDP was lowest and the positive delineation of implanted tumor with sup(99m)Tc-EHDP was poorest in sequential images, though active accumulation in some soft tissues malignant neoplasms, breast cancer, and thyroid cancer, has been reported. Tumor concentration and the tumor-to-blood ratio of sup(99m)Tc-DMSA were not so high, contrary to our expectation that /sup 197/Hg-DMSA might show high tumor concentration and high tumor-to-blood ratio the same as /sup 197/Hg chlormerodrin of the renal scanning radiopharmaceuticals. Tumor concentration of sup(99m)Tc-DSDP was highest. The tumor-to-blood concentration ratio was lower than that of the above mentioned radiopharmaceuticals but the tumor-to-liver ratio and/or tumor-to-lung ratio was over 1.0 at the earlier time. Biologic distribution of sup(99m)Tc-DSDP was similar to that of /sup 32/P labeled DSDP. It is presumed that sup(99m)Tc is labeled at the phosphate ester of DSDP which is dephospholytated immediately by phospholylase in vivo following intravenous injection. Although it is not known precisely it may be assumed that the mechanism of accumulating sup(99m)Tc-DSDP in Ehrlich's tumor is related to the phospholylase activity in neoplasms.

Extraordinary Hall effect in Co implanted GaAs hybrid magnetic semiconductors

International Nuclear Information System (INIS)

Honda, S.; Tateishi, K.; Nawate, M.; Sakamoto, I.

2004-01-01

Hybrid Co/GaAs ferromagnetic semiconductors have been prepared by implantation method. In these samples, sheet resistance shows weak temperature dependence, and the extraordinary Hall effect with positive coefficient is observed. In small Co content samples, Hall resistance increases with decreasing temperature and maximum value of 3.6x10 -2 Ω is obtained at 150 K

High-field susceptibility in ferromagnetic NpOs2

International Nuclear Information System (INIS)

Dunlap, B.D.; Aldred, A.T.; Lam, D.J.; Davidson, G.R.

1975-01-01

NpOs 2 is known to be a ferromagnet with a Curie temperature of 7.5 0 K. Previous bulk magnetization measurements indicated a field-induced magnetization even well below the transition temperature. By a measurement of the local high-field susceptibility, using the Moessbauer effect in 237 Np, a susceptibility of (1.2 +- 0.2) x 10 -2 emu/mole at 1.6 0 K is obtained, in general agreement with the bulk measurement. Such a large susceptibility is best understood by a model f itinerant magnetism, although other properties of the material indicate localized behavior

Normal state Raman spectra of high-Tc cuprates

International Nuclear Information System (INIS)

Bishoyi, K.C.; Rout, G.C.; Behera, S.N.

2003-01-01

We present a microscopic theory to explain Raman spectra of high-T c cuprates R 2-x M x CuO 4 in the normal state. We used electronic Hamiltonian prescribed by Fulde in presence of anti-ferromagnetism. Phonon interaction to the hybridization between the conduction electrons of the system and the f-electrons has been incorporated in the calculation. The phonon spectral density is calculated by the Green function technique of Zubarev at zero wave vector and finite (room) temperature limit. Parameter dependence of Raman active phonon frequencies are studied by varying model parameters of the system i.e. the position of f-level (ε f ), the effective electron-phonon coupling strength (g), the staggered magnetic field (h 1 ), and the hybridization parameter (v). The four Raman active peaks (P 1 to P 4 ) represent the electronic states of the atomic sub-systems of the cuprate systems. They show up as phonon excitations due to the coupling of the phonon to the electrons and the anti-ferromagnetic gap. (author)

Robust high-yield ~1 TBq production of cyclotron based sodium [99mTc]pertechnetate.

Science.gov (United States)

Andersson, J D; Thomas, B; Selivanova, S V; Berthelette, E; Wilson, J S; McEwan, A J B; Gagnon, K

2018-03-02

This paper presents the irradiation and processing of high-current 100 Mo targets at the University of Alberta (UofA) in a GMP compliant setting. For purpose of comparison with a second production facility, additional studies at Centre Hospitalier Universitaire de Sherbrooke (CHUS) are also described. More than 70% of today's diagnostic radiopharmaceuticals are based on 99m Tc, however the conventional supply chain for obtaining 99m Tc is fragile. The aim of this work was to demonstrate reliable high yield production and processing of 99m Tc with medium-energy, high-current, cyclotrons. We used two cyclotrons (TR-24, Advanced Cyclotron Systems, Inc) for irradiations with 22 MeV or 24 MeV incident energy and 400 μA current up to a maximum of 6 h. The irradiated 100 Mo was dissolved using peroxide, basified using ammonium carbonate, and purified using a PEG-based solid phase extraction technique. High-yield productions with 22 MeV (400 μA, 6 h) yielded an average isolated [ 99m Tc]TcO 4 - yield of 878 GBq ± 99 GBq (23.7 Ci ± 2.7 Ci) decay corrected to EOB, n = 8 (isolated saturation yield: 4.36 ± 0.49 GBq/μA). Irradiations with 24 MeV (400 μA, 6 h) resulted in an average isolated [ 99m Tc]TcO 4 - yield of 993 GBq ± 100 GBq (26.8 Ci ± 2.7 Ci) decay corrected to EOB, n = 7 (isolated saturation yield: 4.97 ± 0.50 GBq/μA). These yields corresponds to 600-700 GBq (16-19 Ci) of [ 99m Tc]TcO 4 - at release (i.e. 3 hour post-EOB). For all tested batches, the QC results were within the recently published specifications in the European Pharmacopoeia. Reliable near-TBq production yields for 99m Tc can be obtained using medium-energy cyclotrons. This work presents evidence that medium-energy high-current cyclotrons can provide high yields of [ 99m Tc]TcO 4 - with radionuclidic impurities levels within the specifications of the existing European Pharmacopoeia monograph, indicating that this

Weak doping dependence of the antiferromagnetic coupling between nearest-neighbor Mn2 + spins in (Ba1 -xKx) (Zn1-yMny) 2As2

Science.gov (United States)

Surmach, M. A.; Chen, B. J.; Deng, Z.; Jin, C. Q.; Glasbrenner, J. K.; Mazin, I. I.; Ivanov, A.; Inosov, D. S.

2018-03-01

Dilute magnetic semiconductors (DMS) are nonmagnetic semiconductors doped with magnetic transition metals. The recently discovered DMS material (Ba1 -xKx) (Zn1-yMny) 2As2 offers a unique and versatile control of the Curie temperature TC by decoupling the spin (Mn2 +, S =5 /2 ) and charge (K+) doping in different crystallographic layers. In an attempt to describe from first-principles calculations the role of hole doping in stabilizing ferromagnetic order, it was recently suggested that the antiferromagnetic exchange coupling J between the nearest-neighbor Mn ions would experience a nearly twofold suppression upon doping 20% of holes by potassium substitution. At the same time, further-neighbor interactions become increasingly ferromagnetic upon doping, leading to a rapid increase of TC. Using inelastic neutron scattering, we have observed a localized magnetic excitation at about 13 meV associated with the destruction of the nearest-neighbor Mn-Mn singlet ground state. Hole doping results in a notable broadening of this peak, evidencing significant particle-hole damping, but with only a minor change in the peak position. We argue that this unexpected result can be explained by a combined effect of superexchange and double-exchange interactions.

Magnetic and thermodynamic properties of the Pr-based ferromagnet PrGe2-δ

Science.gov (United States)

Matsumoto, Keisuke T.; Morioka, Naoya; Hiraoka, Koichi

2018-03-01

We investigated the magnetization, M, and specific heat, C, of ThSi2-type PrGe2-δ. A polycrystalline sample of PrGe2-δ was prepared by arc-melting. Magnetization divided by magnetic field, M / B, increased sharply and C showed a clear jump at the Curie temperature, TC, of 14.6 K; these results indicate that PrGe2-δ ordered ferromagnetically. The magnetic entropy at TC reached R ln 3, indicating a quasi-triplet crystalline electric field (CEF) ground state. The maximum value of magnetic entropy change was 11.5 J/K kg with a field change of 7 T, which is comparable to those of other right rare-earth based magnetocaloric materials. This large magnetic entropy change was attributed to the quasi-triplet ground state of the CEF.

Pinning and creep in high-Tc superconductors

International Nuclear Information System (INIS)

Ovchinnikov, Yu.N.; Ivlev, B.I.

1992-01-01

The angular and magnetic field dependence of a critical current parallel to the layers in the layered superconductors is studied. The critical current value is found for a superconductor with strong pinning centers. Quantum flux creep in sufficiently perfect layered high-Tc superconductors is discussed. The cross-over temperature between activated and quantum creep is found. (orig.)

Plasma resonance in anisotropic layered high-Tc superconductors

DEFF Research Database (Denmark)

Sakai, Shigeki; Pedersen, Niels Falsig

1999-01-01

The plasma resonance is described theoretically by the inductive coupling model for a large stacked Josephson-junction system such as the intrinsic Josephson-junction array in anisotropic high- T-c superconductors. Eigenmodes of the plasma oscillation are analytically described and a numerical...

Low-confinement high-power semiconductor lasers

NARCIS (Netherlands)

Buda, M.

1999-01-01

This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

Feasibility of introducing ferromagnetic materials to onboard bulk high-T{sub c} superconductors to enhance the performance of present maglev systems

Energy Technology Data Exchange (ETDEWEB)

Deng, Zigang, E-mail: zgdeng@gmail.com [Applied Superconductivity Laboratory (ASCLab), Southwest Jiaotong University (SWJTU), Chengdu, Sichuan 610031 (China); State Key Laboratory of Traction Power (TPL), Southwest Jiaotong University (SWJTU), Chengdu, Sichuan 610031 (China); Wang, Jiasu [Applied Superconductivity Laboratory (ASCLab), Southwest Jiaotong University (SWJTU), Chengdu, Sichuan 610031 (China); Zheng, Jun; Zhang, Ya [Applied Superconductivity Laboratory (ASCLab), Southwest Jiaotong University (SWJTU), Chengdu, Sichuan 610031 (China); State Key Laboratory of Traction Power (TPL), Southwest Jiaotong University (SWJTU), Chengdu, Sichuan 610031 (China); Wang, Suyu [Applied Superconductivity Laboratory (ASCLab), Southwest Jiaotong University (SWJTU), Chengdu, Sichuan 610031 (China)

2013-02-14

Highlights: ► Ferromagnetic materials guide the flux distribution of the PMG to bulk positions. ► With ferromagnetic materials, guidance performance can be enhanced greatly. ► A new HTS Maglev system with onboard ferromagnetic materials is designed. ► The design can meet large guidance force requirements for practical applications. -- Abstract: Performance improvement is a long-term research task for the promotion of practical application of promising high-temperature superconducting (HTS) magnetic levitation (maglev) vehicle technologies. We studied the feasibility to enhance the performance of present HTS Maglev systems by introducing ferromagnetic materials to onboard bulk superconductors. The principle here is to make use of the high magnetic permeability of ferromagnetic materials to alter the flux distribution of the permanent magnet guideway for the enhancement of magnetic field density at the position of the bulk superconductors. Ferromagnetic iron plates were added to the upper surface of bulk superconductors and their geometric and positioning effects on the maglev performance were investigated experimentally. Results show that the guidance performance (stability) was enhanced greatly for a particular setup when compared to the present maglev system which is helpful in the application where large guidance forces are needed such as maglev tracks with high degrees of curves.

Josephson junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Wild, Georg Hermann

2012-01-01

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Josephson junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Wild, Georg Hermann

2012-03-04

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Electron transport in heavily doped GdN

Science.gov (United States)

Maity, T.; Trodahl, H. J.; Natali, F.; Ruck, B. J.; Vézian, S.

2018-01-01

We report measurements of electron transport phenomena in the intrinsic ferromagnetic semiconductor GdN doped with 1.3 ×1021cm-3 electrons. The conductivity, carrier concentration, and thermoelectric power are compared with expectations based on an LSDA+U band structure. In the ferromagnetic state the carriers fill the majority-spin conduction band pockets to the bottom of the minority-spin band. The resistance implies an electron mobility of 18 cm2V-1s-1 at zero temperature, and in turn a mean-free path of 10-30 nm. Spin disorder scattering rapidly reduces the mobility near the 70 K Curie temperature (TC). The thermoelectric power is negative in the paramagnetic phase, as expected for a n -type conductor, with a magnitude that is in agreement with the Fermi energy implied by the band structure. The thermopower reverses sign to be positive in the ferromagnetic phase, which correlates with a strongly temperature-dependent electron diffusion from spin-disorder scattering that increases rapidly as the temperature rises toward TC.

Low-temperature magnetization of (Ga,Mn)As semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Mašek, Jan; Wang, K. Y.; Edmonds, K. W.; Sawicki, M.; Polini, M.; Sinova, J.; MacDonald, A. H.; Campion, R. P.; Zhao, L.X.; Farley, N.R.S.; Johal, T.K.; van der Laan, G.; Foxon, C. T.; Gallagher, B. L.

2006-01-01

Roč. 73, č. 16 (2006), 165205/1-165205/11 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575 Grant - others:EPSRC(GB) GR/S81407/01; FENIKS(XE) EC:G5RD-CT-2001-00535; US Department of Energy(US) DE-FG03-02ER45958 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * magnetization Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.107, year: 2006

Studying the superconductor-ferromagnet proximity effect with polarised neutron reflectometry

Science.gov (United States)

Satchell, Nathan; Cooper, Joshaniel; Kinane, Christy; Witt, James; Burnell, Gavin; Langridge, Sean

At the interface between a superconductor (S) and ferromagnet (F), an inhomogeneity can convert singlet Cooper pairs into the (spin aligned) long ranged triplet component (LRTC). The manipulation of the LRTC forms the basis of the emerging field of super-spintronics. Several theoretical works predict modification to the local magnetic state inside the S layer with the inclusion of triplet Cooper pairs, however there are now several experimental observations which disagree on both the magnitude and direction of this induced moment (see for example and). Here we report on measurements of the proximity effect using polarised neutron reflectometry, a technique sensitive to changes in the total magnetisation of a S-F heterostructure. Our results suggest that a `smoking gun' direct signature of the LRTC is below the sensitivity of our technique, we are able to study the inverse effect namely a modification to the ferromagnetism by proximity to singlet superconductivity. These observations are supported by XMCD measurements showing changes to the Fe and Co below the S layer Tc.

Blue shift of the plasma edge of a ferromagnetic semimetal

International Nuclear Information System (INIS)

Wachter, P.; Bommeli, F.; Degiorgi, L.; Burlet, P.; Bourdarot, F.

1998-01-01

Full text: In general rare earth pnictides are semimetals and antiferromagnets. Only some nitrides are quoted as ferri or ferromagnetic. However, it has been shown when prepared stoichiometrically and in single crystalline form the free carrier concentration is only in the percent per cation range, thus they are typical low carrier systems. Under these conditions the nitrides are all canted antiferromagnets and metamagnets, i.e. they show Abstract only. The full magnetic moment only with an applied magnetic field. However, when prepared as single crystals but with excess of the rare earths they become spontaneously ferromagnets due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in addition to the superexchange mechanisms. On such ferromagnetic compositions of TbN and GdN and also in EuB 6 a new magneto-optic effect has been discovered, a spontaneous blue shift of the plasma edge upon magnetic order. The plasma edge is measured with optical reflectivity and it depends on the free carrier concentration. In other words the free carrier concentration increases upon ferromagnetic order. This effect can be understood with the spontaneous exchange splitting of mainly the 5d conduction band, lowering the bottom of the spin up 5d band, thus increasing the indirect overlap with the valence p band of the anions and thus enhancing the carrier concentration. This blue shift of the plasma edge follows a spin correlation function. An external magnetic field applied near TC enhances the blue shift since the magnetization is not yet saturated. For T→0 a magnetic field has no effect since the magnetization is spontaneously saturated

Integrated-circuit microwave detector based on granular high-Tc thin films. [Y-Ba-Cu-O

Energy Technology Data Exchange (ETDEWEB)

Drobinin, A.V.; Lutovinov, V.S.; Starostenko, I.V. (Moscow Inst. of Radioengineering, Electronics and Automation, (MIREA), Moscow (USSR))

1991-12-01

A highly sensitive integrative-circuit microwave detector based on granular High-Tc film has been designed. All matching circuits and High-Tc microbridge are located on the same substrate. The voltage responsivity 10{sup 3} V/W has been found at 65 K and frequency 5 GHz. Different modes of microwave detection have been observed: bolometric response near Tc in high-quality films, rectification mode caused by an array of weak links dominating in low-quality films, detection caused by nonlinear magnetic flux motion. (orig.).

High-mobility pyrene-based semiconductor for organic thin-film transistors.

Science.gov (United States)

Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

2013-05-01

Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

The half-metallic ferromagnetism character in Be1-xVxY (Y=Se and Te) alloys: An ab-initio study

Science.gov (United States)

Sajjad, M.; Manzoor, Sadia; Zhang, H. X.; Noor, N. A.; Alay-e-Abbas, S. M.; Shaukat, A.; Khenata, R.

2015-04-01

Ab-initio calculations for V-doped BeSe and BeTe semiconductors are performed by means of all-electrons full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. The structural properties are optimized using the Wu-Cohen generalized gradient approximation functional, whereas modified Becke and Jhonson local density approximation functional has been employed for evaluating the spin-polarized electronic and magnetic properties. Magnetic stability at various doping concentrations in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering is investigated by comparing the minimum total energies and enthalpies of formation (ΔH). Studied band structures, density of states, total energy, exchange interactions and magnetic moments manifest both alloys with half-metallic ferromagnetic behavior. Moreover, their valance bands are found to be paired ferromagnetically with V atoms. Furthermore, it was observed that the magnetic moment of vanadium atom reduces from free space charge value due to p-d hybridization which yields small magnetic moments on the Be, Se and Te sites.

Modulation of Metal and Insulator States in 2D Ferromagnetic VS2 by van der Waals Interaction Engineering.

Science.gov (United States)

Guo, Yuqiao; Deng, Haitao; Sun, Xu; Li, Xiuling; Zhao, Jiyin; Wu, Junchi; Chu, Wangsheng; Zhang, Sijia; Pan, Haibin; Zheng, Xusheng; Wu, Xiaojun; Jin, Changqing; Wu, Changzheng; Xie, Yi

2017-08-01

2D transition-metal dichalcogenides (TMDCs) are currently the key to the development of nanoelectronics. However, TMDCs are predominantly nonmagnetic, greatly hindering the advancement of their spintronic applications. Here, an experimental realization of intrinsic magnetic ordering in a pristine TMDC lattice is reported, bringing a new class of ferromagnetic semiconductors among TMDCs. Through van der Waals (vdW) interaction engineering of 2D vanadium disulfide (VS 2 ), dual regulation of spin properties and bandgap brings about intrinsic ferromagnetism along with a small bandgap, unravelling the decisive role of vdW gaps in determining the electronic states in 2D VS 2 . An overall control of the electronic states of VS 2 is also demonstrated: bond-enlarging triggering a metal-to-semiconductor electronic transition and bond-compression inducing metallization in 2D VS 2 . The pristine VS 2 lattice thus provides a new platform for precise manipulation of both charge and spin degrees of freedom in 2D TMDCs availing spintronic applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of 99mTc labelled somatostatin analogues with high affinity for somatostatin receptors

International Nuclear Information System (INIS)

Maina, T.; Nock, B.; Nicolopoulou, A.; Tsipra, C.; Poppe, M.; Chiotellis, E.

2001-01-01

A recent development in oncology involves the use of metabolically stabilized peptide hormone analogues labelled with metallic radionuclides for the diagnosis or therapy of malignant disease. This approach was successfully applied for the first time in the visualization of somatostatin positive tumours and their metastases with 111 In DTPA-octreotide. In an effort to obtain a 99m Tc somatostatin receptor affine radioligand we describe herein the synthesis, radiochemistry and preliminary biological evaluation of two novel 99m Tc labelled somatostatin analogues, N 4 -TOC and N 4 -RC-160. In these compounds a tetraamine bifunctional unit was covalently attached to the N-terminal (D)Phe 1 of the peptide chain using Boc-protection strategies. The peptide conjugates were purified by high performance liquid chromatography (HPLC) and characterized by UV/Vis and ES-MS spectroscopies. As revealed by HPLC, 99m Tc labelling was quantitative under mild conditions, leading to a single 99m Tc species in high specific activities. Affinity of 99m Tc N 4 -TOC for the somatostatin receptor, as determined by in vitro binding assays in rat brain cortex membranes, was found unaffected by the presence of the bulky metal chelate. The binding properties of 99m Tc N 4 -RC-160 could not be determined by this assay due to an extremely high non-specific binding of this radioligand, and will be shortly investigated by other methods. Tissue distribution in healthy mice revealed that 99m Tc N 4 -TOC is clearing mainly through the kidneys and the urinary tract whereas 99m Tc N 4 -RC-160 shows a high accumulation in the liver as a result of its lipophilicity. Analysis of urine samples by HPLC showed that 99m Tc N 4 -TOC is excreted integer from the body of mice, while 99m Tc N 4 -RC-160 is totally transformed to an unidentified hydrophilic metabolite in vivo. The location of this metabolism is currently investigated. In vivo blocking experiments using animals pre-treated with 50 μg octreotide

Spectroscopic Characterization of Aqua [ fac-Tc(CO)3]+ Complexes at High Ionic Strength.

Science.gov (United States)

Chatterjee, Sayandev; Hall, Gabriel B; Engelhard, Mark H; Du, Yingge; Washton, Nancy M; Lukens, Wayne W; Lee, Sungsik; Pearce, Carolyn I; Levitskaia, Tatiana G

2018-06-05

Understanding fundamental Tc chemistry is important to both the remediation of nuclear waste and the reprocessing of nuclear fuel; however, current knowledge of the electronic structure and spectral signatures of low-valent Tc compounds significantly lags behind the remainder of the d-block elements. In particular, identification and treatment of Tc speciation in legacy nuclear waste is challenging due to the lack of reference data especially for Tc compounds in the less common oxidation states (I-VI). In an effort to establish a spectroscopic library corresponding to the relevant conditions of extremely high ionic strength typical for the legacy nuclear waste, compounds with the general formula of [ fac-Tc(CO) 3 (OH 2 ) 3- n (OH) n ] 1- n (where n = 0-3) were examined by a range of spectroscopic techniques including 99 Tc/ 13 C NMR, IR, XPS, and XAS. In the series of monomeric aqua species, stepwise hydrolysis results in the increase of the Tc metal center electron density and corresponding progressive decrease of the Tc-C bond distances, Tc electron binding energies, and carbonyl stretching frequencies in the order [ fac-Tc(CO) 3 (OH 2 ) 3 ] + > [ fac-Tc(CO) 3 (OH 2 ) 2 (OH)] > [ fac-Tc(CO) 3 (OH 2 )(OH) 2 ] - . These results correlate with established trends of the 99 Tc upfield chemical shift and carbonyl 13 C downfield chemical shift. The lone exception is [ fac-Tc(CO) 3 (OH)] 4 which exhibits a comparatively low electron density at the metal center attributed to the μ 3 -bridging nature of the - OH ligands causing less σ-donation and no π-donation. This work also reports the first observations of these compounds by XPS and [ fac-Tc(CO) 3 Cl 3 ] 2- by XAS. The unique and distinguishable spectral features of the aqua [ fac-Tc(CO) 3 ] + complexes lay the foundation for their identification in the complex aqueous matrixes.

The effect of long annealing on Pb-doped high-Tc Bi-Sr-Ca-Cu-O systems

Energy Technology Data Exchange (ETDEWEB)

Chandra, S.; Agnihotry, S.A.; Asthana, P.; Nagpal, K.C.; Saini, K.K.; Chanderkant; Sharma, C.P.; Ekbote, S.N. (National Physical Lab., New Delhi (India))

1991-01-16

The lead doped Bi based copper oxide high-Tc superconductors with different nominal compositions and with different annealing time periods are studied. The highest Tc (zero) achieved is 112 K in bulk phase 2223. The varying intensity of the low angle line at 2{theta}{approx equal}4.7deg suggests the gradual formation of the high-Tc phase due to the long annealing of nearly 200 to 250 h. It is also found that the high-Tc phase starts degrading after 250 h of annealing and Tc reduces. The distortion of the 2223 phase is suggested by the broadening of different XRD peaks, also the SEM studies support the above contention. The EDAX studies show no presence of Pb in the crystallites. (orig.).

Submillimetre wave spectroscopy of semiconductors in high magnetic fields

International Nuclear Information System (INIS)

Maan, J.C.

1979-01-01

Two types of cyclotron resonance studies with far infrared radiation and at high magnetic fields in semiconductors are discussed. Firstly, the phenomenon of the change in the static conductivity at cyclotron resonance conditions in pure semiconductors, in this case n-GaAs, is investigated. Secondly, the results of cyclotron resonance experiments in an n-InAs-GaSb superlattice are discussed. (Auth.)

Critical temperatures Tc estimated by Josephson-junction array model of layered high Tc superconductors

International Nuclear Information System (INIS)

Kawabata, C.; Shenoy, S.R.; Bishop, A.R.

1994-11-01

We model high T c superconductors (HTS) by quantum capacitive Josephson junction arrays (JJA), with Angstrom-scale parameters, to obtain an estimate of Tc trends. The basic idea is as follows. Number (or change) and phase are conjugate variables, with the uncertainty products obeying ΔN · Δ Θ > 1. Thus, in HTS, global phase coherence is opposed by charging-energy induced quantum phase fluctuations, especially across Josephson-coupled CuO 2 planes. These have separation d 1 and effective interplanar dielectric constant ε, e.g. from Y atoms in YBaCuO. Decreasing the interplane charging energy E 0 perpendicular to ∼ d 1 /ε, raises Tc. In Section 1, we motivate a modelling of HTS phase excitations by a quantum capacitive 3D JJA model, with XY planar phases. Section 2 gives a physical picture of the HTS transition, relating the complex layered HTS structure to a simpler ''intermediate level'' quantum 3D JJA/XY model. Section 3 sets up a path integral (3+1)D model that reduces to a previously studied anisotropic 3D XY/JJA model, with constants renormalized in some way, by the capacitance. Postponing a detailed analysis to elsewhere, we make a heuristic estimate for the reduction of the previous Tc, by the charging energy. (author). 30 refs, 8 figs

Mean-field theory of magnetic properties of Mn.sub.x./sub.III.sub.1-x./sub.V semiconductors

Czech Academy of Sciences Publication Activity Database

Abolfath, M.; Jungwirth, Tomáš; MacDonald, A. H.

2001-01-01

Roč. 10, - (2001), s. 161-164 ISSN 1386-9477 Institutional research plan: CEZ:AV0Z1010914 Keywords : diluted magnetic semiconductors * ferromagnetism * magnetic anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.009, year: 2001

High blocking temperature in SnO{sub 2} based super-paramagnetic diluted magnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Mounkachi, O., E-mail: o.mounkachi@mascir.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Salmani, E. [LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); El Moussaoui, H. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Masrour, R. [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, Safi (Morocco); Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Ez-Zahraouy, H. [LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

2014-11-25

Highlights: • Simple doping, (Sn,Fe)O{sub 2} exhibits a soft ferromagnetism at low temperature. • High blocking temperature was observed for Cu doped (Sn,Fe)O{sub 2} nanocrystalline. • Experimental results are confirmed by ab initio calculations. - Abstract: (Fe,Cu)-doped SnO{sub 2} nanocrystals was synthesized using the co-precipitation method. Magnetic Properties Measurement System (MPMS) revealed that for simple doping, Fe-doped SnO{sub 2} soft ferromagnetism at low temperature appears, while the ferromagnetic phase is stable at temperature higher than room temperature for Cu co-doping element. The ferromagnetism is significantly enhanced by the Cu addition to Fe-doped SnO{sub 2}, according to the ZFC and FC magnetizations and the hysteresis loops. The evidences for the existence of superparamagnetism are characterized and high blocking temperature super-paramagnetism in (Fe,Cu)-doped SnO{sub 2} nanocrystals was observed. Based on first-principles calculations, we have investigated electronic structures and magnetic properties of Fe-doped SnO{sub 2} and (Fe,Cu)-doped SnO{sub 2} with and without defect with LDA and LDA-SIC approximations. The results suggest that the oxygen vacancies (V{sub O}) play a critical role in the activation of ferromagnetism in Fe doped SnO{sub 2}. For (Fe,Cu)-doped SnO{sub 2} the results exhibit that Cu strongly influences on the magnetic properties of these doped systems which are in good agreement with the experimental observations. Electronic structure show that the presence of Cu promote the ferromagnetic bound magnetic polaron interaction through the carriers introduce by d (Cu)

Transition-metal-doped group-IV monochalcogenides: a combination of two-dimensional triferroics and diluted magnetic semiconductors

Science.gov (United States)

Yang, Liu; Wu, Menghao; Yao, Kailun

2018-05-01

We report the first-principles evidence of a series of two-dimensional triferroics (ferromagnetic + ferroelectric + ferroelastic), which can be obtained by doping transition-metal ions in group-IV monochalcogenide (SnS, SnSe, GeS, GeSe) monolayers, noting that a ferromagnetic Fe-doped SnS2 monolayer has recently been realized (Li B et al 2017 Nat. Commun. 8 1958). The ferroelectricity, ferroelasticity and ferromagnetism can be coupled and the magnetization direction may be switched upon ferroelectric/ferroelastic switching, rendering electrical writing + magnetic reading possible. They can be also two-dimensional half-metals or diluted magnetic semiconductors, where p/n channels or even multiferroic tunneling junctions can be designed by variation in doping and incorporated into a monolayer wafer.

On the superconducting phase diagram of high Tc superconductors

International Nuclear Information System (INIS)

de la Cruz, F.

1990-01-01

The tendency of oxide superconductors to show granularity has been pointed out since the beginning of research on superconductivity in this type of materials. Nevertheless, only very recently the full phase diagram and characteristics of the grains have been determined. In this paper, the authors review and discuss the different critical fields and their relation to the transport of superconducting current. The superconducting response of single crystals of High Tc superconductors is discussed. Special attention is devoted to the behavior of the vortex lattice and, in particular, to the recent discovery of the quenching of H c1 in YBaCuO, several degrees below Tc

Blue emitting organic semiconductors under high pressure

DEFF Research Database (Denmark)

Knaapila, Matti; Guha, Suchismita

2016-01-01

This review describes essential optical and emerging structural experiments that use high GPa range hydrostatic pressure to probe physical phenomena in blue-emitting organic semiconductors including π-conjugated polyfluorene and related compounds. The work emphasizes molecular structure and inter......This review describes essential optical and emerging structural experiments that use high GPa range hydrostatic pressure to probe physical phenomena in blue-emitting organic semiconductors including π-conjugated polyfluorene and related compounds. The work emphasizes molecular structure...... and intermolecular self-organization that typically determine transport and optical emission in π-conjugated oligomers and polymers. In this context, hydrostatic pressure through diamond anvil cells has proven to be an elegant tool to control structure and interactions without chemical intervention. This has been...... and intermolecular interactions on optical excitations, electron–phonon interaction, and changes in backbone conformations. This picture is connected to the optical high pressure studies of other π-conjugated systems and emerging x-ray scattering experiments from polyfluorenes which provides a structure-property map...

Correlation between electronic and magnetic properties in the IV–VI group diluted magnetic semiconductor SnMnTe

NARCIS (Netherlands)

Eltink, S.J.E.A.; Swagten, H.J.M.; Stoffels, N.M.J.; Jonge, de W.J.M.

1990-01-01

The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferromagnetic interactions are dominant. On the basis of preliminary experiments on the low temperature magnetic phases no clear evidence for re-entrant behavior can be submitted.

Zero thermal expansion and ferromagnetism in cubic Sc(1-x)M(x)F3 (M = Ga, Fe) over a wide temperature range.

Science.gov (United States)

Hu, Lei; Chen, Jun; Fan, Longlong; Ren, Yang; Rong, Yangchun; Pan, Zhao; Deng, Jinxia; Yu, Ranbo; Xing, Xianran

2014-10-01

The rare physical property of zero thermal expansion (ZTE) is intriguing because neither expansion nor contraction occurs with temperature fluctuations. Most ZTE, however, occurs below room temperature. It is a great challenge to achieve isotropic ZTE at high temperatures. Here we report the unconventional isotropic ZTE in the cubic (Sc1-xMx)F3 (M = Ga, Fe) over a wide temperature range (linear coefficient of thermal expansion (CTE), αl = 2.34 × 10(-7) K(-1), 300-900 K). Such a broad temperature range with a considerably negligible CTE has rarely been documented. The present ZTE property has been designed using the introduction of local distortions in the macroscopic cubic lattice by heterogeneous cation substitution for the Sc site. Even though the macroscopic crystallographic structure of (Sc0.85Ga0.05Fe0.1)F3 adheres to the cubic system (Pm3̅m) according to the results of X-ray diffraction, the local structure exhibits a slight rhombohedral distortion. This is confirmed by pair distribution function analysis of synchrotron radiation X-ray total scattering. This local distortion may weaken the contribution from the transverse thermal vibration of fluorine atoms to negative thermal expansion, and thus may presumably be responsible for the ZTE. In addition, the present ZTE compounds of (Sc1-xMx)F3 can be functionalized to exhibit high-Tc ferromagnetism and a narrow-gap semiconductor feature. The present study shows the possibility of obtaining ZTE materials with multifunctionality in future work.

Theory of weak localization in ferromagnetic (Ga,Mn)As

Czech Academy of Sciences Publication Activity Database

Garate, I.; Sinova, J.; Jungwirth, Tomáš; MacDonald, A.

2009-01-01

Roč. 79, č. 15 (2009), 155702/1-155702/13 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 214499 - NAMASTE; European Commission(XE) 015728 - NANOSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : electrical conductivity * exchange interactions (electron) * ferromagnetic materials * gallium arsenide * magnetic semiconductors * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.79.155207

Excitonic Wigner crystal and high T sub c ferromagnetism in RB sub 6

CERN Document Server

Kasuya, T

2000-01-01

The mechanisms for the high T sub c ferromagnetism in La-doped divalent hexaborides DB sub 6 are studied in detail comparing with similar family materials, in particular with YbB sub 6 , EuB sub 6 and Ce monopnictides. It is shown that in DB sub 6 the light-electron-heavy-hole paired excitonic states form the Wigner crystal, or Wigner glass in actual materials, in which the conventional intersite electron exchange interactions similar to that in Ni dominate the pair singlet formation due to the intra pair mixing causing a ferromagnetic spin glass-like ordering of electron spins. In the La-doped system La sub x D sub 1 sub - sub x B sub 6 , the population of molecular La impurity states with giant moments increases as x approaches the optimal value x sub 0 approx 0.005 for high T sub c providing vacant states for the roton-like fluctuations, which cause the high T sub c at the boundary of the delocalization of electron carriers. Therefore, the critical La concentration for delocalization coincides with the opt...

Cobalt-doped ZnO as dilute magnetic semiconductor; Cobalt dotiertes ZnO als verduennter magnetischer Halbleiter

Energy Technology Data Exchange (ETDEWEB)

Gacic, Milan

2009-04-24

Dilute magnetic semiconductors (DMS) are technologically promising materials that show ferromagnetic as well as semiconducting properties. These are one of the crucial compounds concerning the development of spintronic devices. The main problem so far ist that for applications the Curie temperature of most of the DMS compounds is much too low. However, DMS compounds based on ZnO as Zn{sub 1-x}Co{sub x}O seem to show ferromagnetism above room temperature, but the ferromagnetic exchange is not fully understood. Intensive experimental investigations need to be done. In the course of this theses Zn{sub 0.95}Co{sub 0.05}O thin films were fabricated by pulsed laser deposition and investigated concerning their magnetic, magnetoelectric and structural properties in order to understand the ferromagnetism in this material. Different experimental methods have been used, as magnetometry, X-ray diffraction (XRD), X-ray magnetic circular dichroism (XMCD), electron spin resonance (ESR) and magnetoelectric transport measurements. At special preparation conditions, where a high defect density is induced, the samples are clearly ferromagnetic above room temperature with a saturation magnetization of 2 {mu}{sub b}/Co and a remanence of 90%. Electrical transport measurements show a clear magnetoresistance as well as a anomalous Hall effect. The anomalous Hall effect rises with the magnetization indicating intrinsic ferromagnetism and a certain degree of spin polarization. As the ferromagnetism disappears with rising charge carrier density the ferromagnetic interaction cannot be mediated by the conduction electrons. A more precise evaluation of the magnetoelectric results shows that there is an additional conducting impurity band which could even be spinpolarized. So there are indications that the ferromagnetism is due to magnetic polarons. Some of the structural and magnetometric results as well as the electron spin resonance measurements suggest an additional extrinsic contribution

Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

Energy Technology Data Exchange (ETDEWEB)

McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

2015-12-15

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

International Nuclear Information System (INIS)

McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

2015-01-01

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al 2 O 3 and HfO 2 . However, there has been much effort to deposit ternary oxides, such as perovskites (ABO 3 ), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable

Tc Generator Development: Up-to-Date Tc Recovery Technologies for Increasing the Effectiveness of Mo Utilisation

Directory of Open Access Journals (Sweden)

Van So Le

2014-01-01

Full Text Available A review on the Mo sources available today and on the Tc generators developed up to date for increasing the effectiveness of Mo utilisation is performed in the format of detailed description of the features and technical performance of the technological groups of the Mo production and Tc recovery. The latest results of the endeavour in this field are also surveyed in regard of the technical solution for overcoming the shortage of Mo supply. The technological topics are grouped and discussed in a way to reflect the similarity in the technological process of each group. The following groups are included in this review which are high specific activity Mo: the current issues of production, the efforts of more effective utilisation, and the high specific activity Mo-based Tc generator and Tc concentration units; low specific activity Mo: the Mo production based on neutron capture and accelerators and the direct production of Tc and the methods of increasing the specific activity of Mo using Szilard-Chalmers reaction and high electric power isotopic separator; up-to-date technologies of Tc recovery from low specific activity Mo: the solvent extraction-based Tc generator, the sublimation methods for Mo/Tc separation, the electrochemical method for Tc recovery, and the column chromatographic methods for Tc recovery. Besides the traditional Tc-generator systems, the integrated Tc generator systems (Tc generator column combined with postelution purification/concentration unit are discussed with the format of process diagram and picture of real generator systems. These systems are the technetium selective sorbent column-based generators, the high Mo-loading capacity column-based integrated Tc generator systems which include the saline-eluted generator systems, and the nonsaline aqueous and organic solvent eluent-eluted generator systems using high Mo-loading capacity molybdategel and recently developed sorbent columns. Tc concentration methods used in the

A novel phthalimide derivative, TC11, has preclinical effects on high-risk myeloma cells and osteoclasts.

Directory of Open Access Journals (Sweden)

Maiko Matsushita

Full Text Available Despite the recent advances in the treatment of multiple myeloma (MM, MM patients with high-risk cytogenetic changes such as t(4;14 translocation or deletion of chromosome 17 still have extremely poor prognoses. With the goal of helping these high-risk MM patients, we previously developed a novel phthalimide derivative, TC11. Here we report the further characterization of TC11 including anti-myeloma effects in vitro and in vivo, a pharmacokinetic study in mice, and anti-osteoclastogenic activity. Intraperitoneal injections of TC11 significantly delayed the growth of subcutaneous tumors in human myeloma-bearing SCID mice. Immunohistochemical analyses showed that TC11 induced apoptosis of MM cells in vivo. In the pharmacokinetic analyses, the Cmax was 2.1 μM at 1 h after the injection of TC11, with 1.2 h as the half-life. TC11 significantly inhibited the differentiation and function of tartrate-resistant acid phosphatase (TRAP-positive multinucleated osteoclasts in mouse osteoclast cultures using M-CSF and RANKL. We also revealed that TC11 induced the apoptosis of myeloma cells accompanied by α-tubulin fragmentation. In addition, TC11 and lenalidomide, another phthalimide derivative, directly bound to nucleophosmin 1 (NPM1, whose role in MM is unknown. Thus, through multiple molecular interactions, TC11 is a potentially effective drug for high-risk MM patients with bone lesions. The present results suggest the possibility of the further development of novel thalidomide derivatives by drug designing.

Ferromagnetism and Crystalline Electric Field Effects in Cubic UX2Zn20 (X=Co, Rh, Ir)

Science.gov (United States)

Bauer, E. D.; Ronning, F.; Silhanek, A.; Harrison, N.; Thompson, J. D.; Sarrao, J. L.; Movshovich, R.; Hundley, M. F.; Jaime, M.; Daniel, E.; Booth, C. H.

2006-03-01

The properties of a new class of cubic UX2Zn20 (X=Co, Rh, Ir) heavy fermion compounds have been investigated by means of magnetic susceptibility, specific heat, electrical resistivity, and x-ray absorption spectroscopy. Both UCo2Zn20 and URh2Zn20 show peaks in C(T) and χ(T) at ˜5-10 K suggesting the presence of crystalline electric field (CEF) effects in these materials, i.e., a localized 5f^2 configuration of uranium. In addition, measurements in high magnetic fields up to 40 T are consistent with a CEF model of a nonmagnetic ground state and a magnetic first excited state separated by ˜ 20 K. In contrast, UIr2Zn20 exhibits a first-order ferromagnetic transition at Tc=2.75 K with a saturation moment μsat=0.5 μB in the ferromagnetic state. All compounds in this series are heavy fermion materials with enhanced electronic specific heat coefficients γ˜ 150-300 mJ/molK^2. The physical properties of UX2Zn20 (X=Co, Rh, Ir) will be discussed.

Tunneling emission of electrons from semiconductors' valence bands in high electric fields

International Nuclear Information System (INIS)

Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

2006-01-01

Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

α-K2AgF4: Ferromagnetism induced by the weak superexchange of different eg orbitals from the nearest neighbor Ag ions

Science.gov (United States)

Zhang, Xiaoli; Zhang, Guoren; Jia, Ting; Zeng, Zhi; Lin, H. Q.

2016-05-01

We study the abnormal ferromagnetism in α-K2AgF4, which is very similar to high-TC parent material La2CuO4 in structure. We find out that the electron correlation is very important in determining the insulating property of α-K2AgF4. The Ag(II) 4d9 in the octahedron crystal field has the t2 g 6 eg 3 electron occupation with eg x2-y2 orbital fully occupied and 3z2-r2 orbital partially occupied. The two eg orbitals are very extended indicating both of them are active in superexchange. Using the Hubbard model combined with Nth-order muffin-tin orbital (NMTO) downfolding technique, it is concluded that the exchange interaction between eg 3z2-r2 and x2-y2 from the first nearest neighbor Ag ions leads to the anomalous ferromagnetism in α-K2AgF4.

α-K2AgF4: Ferromagnetism induced by the weak superexchange of different eg orbitals from the nearest neighbor Ag ions

Directory of Open Access Journals (Sweden)

Xiaoli Zhang

2016-05-01

Full Text Available We study the abnormal ferromagnetism in α-K2AgF4, which is very similar to high-TC parent material La2CuO4 in structure. We find out that the electron correlation is very important in determining the insulating property of α-K2AgF4. The Ag(II 4d9 in the octahedron crystal field has the t 2 g 6 e g 3 electron occupation with eg x2-y2 orbital fully occupied and 3z2-r2 orbital partially occupied. The two eg orbitals are very extended indicating both of them are active in superexchange. Using the Hubbard model combined with Nth-order muffin-tin orbital (NMTO downfolding technique, it is concluded that the exchange interaction between eg 3z2-r2 and x2-y2 from the first nearest neighbor Ag ions leads to the anomalous ferromagnetism in α-K2AgF4.

Magnetic semiconductors for spinelectronics. Europium sulfide and magnetically doped gallium nitride; Magnetische Halbleiter zum Einsatz in der Spinelektronik. Europiumsulfid und magnetisch dotiertes Galliumnitrid

Energy Technology Data Exchange (ETDEWEB)

Keller, J.

2007-07-02

In this work, magnetic semiconductors were investigated. As ferromagnetic compound semiconductor, EuS was investigated as thin film system. Particular attention was paid to the influence of the substrate temperature during growth on the sample properties. The samples grown and investigated here show an anomalous Hall effect. As diluted magnetic semiconductors (DMS), GaN films magnetically doped with Mn or Gd were investigated. In both material systems, ferromagnetism far above room temperature was demonstrated.While GaGdN shows a homogeneous magnetism, all ferromagnetic GaMnN samples show small clusters (phase separations). In addition, measurements of the optical absorption and the magnetic circular dichroism (MCD) were performed on the GaMnN samples. In the optical measurements, the Mn was identified as deep acceptor. At low temperatures, both the magneto-absorption and the MCD show a Zeeman-shift of an absorption band for all doping levels. The exchange energies between valence band and localized magnetic moments can be extracted from fits of the Brillouin function to the Zeeman shifts. This yields values between 1.4 eV and 1.7 eV for the lowest doping levels and between 1.7 eV and 2.1 eV for the highest doped sample. At low temperatures, no ferromagnetic behavior was found in the magneto-optical experiments. The signal is dominated by the localized Mn spin system. At room temperature, the MCD shows a ferromagnetic signature. At elevated temperatures, the signal from the Mn spin system is small enough that the influence of the clusters on the band structure of the host lattice becomes visible. Contrary to the GaMnN samples, the GaGdN films show a homogeneous magnetism. The magnetically doped GaN thin film systems investigated here exhibit different behavior. The exchange mechanism proposed for GaGdN leads to a homogeneous ferromagnetism and is similar to the magnetic exchange in the Eu chalcogenides. The interplay between this intra-atomic f-d exchange and the

Passive high-frequency devices based on superlattice ferromagnetic nanowires

International Nuclear Information System (INIS)

Ye, B.; Li, F.; Cimpoesu, D.; Wiley, J.B.; Jung, J.-S.; Stancu, A.; Spinu, L.

2007-01-01

In this paper we propose to tailor the bandwidth of a microwave filter by exploitation of shape anisotropy of nanowires. In order to achieve this control of shape anisotropy, we considered superlattice wires containing varying-sized ferromagnetic regions separated by nonferromagnetic regions. Superlattice wires of Ni and Au with a nominal diameter of 200 nm were grown using standard electrodeposition techniques. The microwave properties were probed using X-band (9.8 GHz) ferromagnetic resonance (FMR) experiments performed at room temperature. In order to investigate the effectiveness of the shape anisotropy on the superlattice nanowire based filter the FMR spectrum of superlattice structure is compared to the FMR spectra of nanowires samples with constant length

Enhanced Curie temperature and nonvolatile switching of ferromagnetism in ultrathin (Ga,Mn)As channels

Czech Academy of Sciences Publication Activity Database

Stolichnov, I.; Riester, S.W.E.; Mikheev, E.; Setter, N.; Rushforth, A.W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, Tomáš; Trodahl, H.J.

2011-01-01

Roč. 83, č. 11 (2011), 115203/1-115203/5 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * ferroelectrics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011

Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

Science.gov (United States)

Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

2018-05-08

A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

Directory of Open Access Journals (Sweden)

Alex Hayat

2012-12-01

Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

Rapid solidification for preparation of high Tc superconductors

International Nuclear Information System (INIS)

Yavari, A.R.

1988-01-01

High Tc superconducting oxides are prepared in two different ways using rapid solidification: by oxidation of microcrystalline or amorphous tapes obtained by quenching the liquid alloy and via crystallisation of the amorphous oxide obtained by rapid quenching of the oxide melt. This technique is applied for the first time to the BiCaSrCuO family [fr

'99Mo/99mTc Generator Based on High Radionuclidic Pure Zirconium Molybdate Gel

International Nuclear Information System (INIS)

Amin, M.; Mostafa, M.; El-Amir, M.A.; El-Absy, M.A.; Mohamed, O.I.; Farag, A.B.

2014-01-01

99 Mo / 99 mTc radioisotope generator was prepared using in-situ precipitated zirconium molybdate chromatographic column. Zirconium molybdate gel matrix was synthesized by precipitation of neutron activation molybdenum-99 from its solution after variety purification processes to prevent contamination of the 99m Tc eluate with cross-contaminants. Greeter than 82.7 ± 0.4 % of the generated 99m Tc was immediately and reproducible eluted by passing 10 ml 0.9 % NaCl solution through the 1 g zirconium molybdate- 99 Mo column matrix at a flow rate of 0.5 ml / min and room temperature with high chemical, radionuclide ( ≥ 99.9 % 99m Tc) and radiochemical purity ( ≥ 97.7 % % as 99 mTcO 4 - ) with ph value suitable for medical uses.

Evaluating performance of a pixel array semiconductor SPECT system for small animal imaging

International Nuclear Information System (INIS)

Kubo, Naoki; Zhao, Songji; Fujiki, Yutaka

2005-01-01

Small animal imaging has recently been focused on basic nuclear medicine. We have designed and built a small animal SPECT imaging system using a semiconductor camera and a newly designed collimator. We assess the performance of this system for small object imaging. We employed an MGC 1500 (Acrorad Co.) camera including a CdTe semiconductor. The pixel size was 1.4 mm/pixel. We designed and produced a parallel-hole collimator with 20-mm hole length. Our SPECT system consisted of a semiconductor camera with the subject holder set on an electric rotating stage controlled by a computer. We compared this system with a conventional small animal SPECT system comprising a SPECT-2000H scanner with four Anger type cameras and pinhole collimators. The count rate linearity for estimation of the scatter was evaluated for a pie-chart phantom containing different concentrations of 99m Tc. We measured the full width half maximum (FWHM) of the 99m Tc SPECT line source along with scatter. The system volume sensitivity was examined using a flood source phantom which was 35 mm long with a 32-mm inside diameter. Additionally, an in vivo myocardial perfusion SPECT study was performed with a rat. With regards to energy resolution, the semiconductor camera (5.6%) was superior to the conventional Anger type camera (9.8%). In the count rate linearity evaluation, the regression lines of the SPECT values were y=0.019x+0.031 (r 2 =0.999) for our system and y=0.018x+0.060 (r 2 =0.997) for the conventional system. Thus, the scatter count using the semiconductor camera was less than that using the conventional camera. FWHMs of our system and the conventional system were 2.9±0.1 and 2.0±0.1 mm, respectively. Moreover, the system volume sensitivity of our system [0.51 kcps/(MBq/ml)/cm] was superior to that of the conventional system [0.44 kcps/(MBq/ml)/cm]. Our system provided clear images of the rat myocardium, sufficient for practical use in small animal imaging. Our SPECT system, utilizing a

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

Science.gov (United States)

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Plenary lectures of the divisions semiconductor physics, thin films, dynamics and statistical physics, magnetism, metal physics, surface physics, low temperature physics

International Nuclear Information System (INIS)

Roessler, U.

1992-01-01

This volume contains a selection of plenary and invited lectures of the Solid State Division spring meeting of the DPG (Deutsche Physikalische Gesellschaft) 1992 in Regensburg. The constribution come mainly from five fields of the physics of condensed matter: doped fullerenes and high Tc superconductors, surfaces, time-resolved on nonlinear optics, polymer melts, and low-dimensional semiconductor systems. (orig.)

Temperature Dependence of Quasiparticle Spectral Weight and Coherence in High Tc Superconductors

Science.gov (United States)

He, Yang; Zhang, Jessie; Hoffman, Jennifer; Hoffman Lab Team

2014-03-01

Superconductivity arises from the Cooper pairing of quasiparticles on the Fermi surface. Understanding the formation of Cooper pairs is an essential step towards unveiling the mechanism of high Tc superconductivity. We compare scanning tunneling microscope investigations of the temperature dependence of quasiparticle spectral weight and quasiparticle interference in several families of high Tc materials. We calculate the coherent spectral weight related to superconductivity, despite the coexistence of competing orders. The relation between pairing temperature and coherent spectral weight is discussed. We acknowledge support by the New York Community Trust-George Merck Fund.

Elucidation of the enhanced ferromagnetic origin in Mn-doped ZnO nanocrystals embedded into a SiO₂ matrix

Energy Technology Data Exchange (ETDEWEB)

Lee, Sejoon; Lee, Youngmin; Kim, Deukyoung [Dongguk University, Seoul (Korea, Republic of)

2013-01-01

The origin of the enhanced room temperature ferromagnetism in Mn-doped ZnO (ZnO:Mn) nanocrystals is investigated. ZnO:Mn nanocrystals, which were fabricated by using a laser irradiation method with a 248-nm KrF excimer laser, exhibited two-times increase in the spontaneous magnetization (∼0.4 emu/cm³ at 300 K) compared to the ZnO:Mn thin film (∼0.2 emu/cm³ at 300 K). The increased exchange integral of J₁/k{sub B} = 51.6 K in ZnO:Mn nanocrystals, in comparison with the ZnO:Mn thin film (J₁/k{sub B} = 46.9 K), is indicative of the enhanced ferromagnetic exchange interaction. This is attributed to the large number of acceptor defects in the SiO₂-capped ZnO:Mn nanocrystals. Namely, the holes bound to the acceptor defects form microscopic bound-magnetic-polarons with Mn ions; hence, long-range ferromagnetic coupling is enhanced. The results suggest that ferromagnetism in ZnO-based dilute magnetic semiconductors can be controlled by modulating the density of native point defects, which can be chemically and thermodynamically modified during the material synthesis or preparation.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

Science.gov (United States)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Oxygen stoichiometry and the high Tc superconducting oxides

International Nuclear Information System (INIS)

Tarascon, J.M.; Bagley, B.G.

1989-01-01

Methods for determining the oxygen content in high Tc materials, such as thermogravimetric analysis and chemical analysis, are discussed. Consideration is given to La-based cuprates, Y-based cuprates, and Bi-based cuprates. Superconducting transition temperatures are analyzed as a function of the Cu(1)-O(4) bond lengths for several different compositions in the Y-based system. 28 references

Magnetic profiles in ferromagnetic/superconducting superlattices.

Energy Technology Data Exchange (ETDEWEB)

te Velthuis, S. G. E.; Hoffmann, A.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid

2007-02-28

The interplay between ferromagnetism and superconductivity has been of longstanding fundamental research interest to scientists, as the competition between these generally mutually exclusive types of long-range order gives rise to a rich variety of physical phenomena. A method of studying these exciting effects is by investigating artificially layered systems, i.e. alternating deposition of superconducting and ferromagnetic thin films on a substrate, which enables a straight-forward combination of the two types of long-range order and allows the study of how they compete at the interface over nanometer length scales. While originally studies focused on low temperature superconductors interchanged with metallic ferromagnets, in recent years the scope has broadened to include superlattices of high T{sub c} superconductors and colossal magnetoresistance oxides. Creating films where both the superconducting as well as the ferromagnetic layers are complex oxide materials with similar crystal structures (Figure 1), allows the creation of epitaxial superlattices, with potentially atomically flat and ordered interfaces.

Conduit for high temperature transfer of molten semiconductor crystalline material

Science.gov (United States)

Fiegl, George (Inventor); Torbet, Walter (Inventor)

1983-01-01

A conduit for high temperature transfer of molten semiconductor crystalline material consists of a composite structure incorporating a quartz transfer tube as the innermost member, with an outer thermally insulating layer designed to serve the dual purposes of minimizing heat losses from the quartz tube and maintaining mechanical strength and rigidity of the conduit at the elevated temperatures encountered. The composite structure ensures that the molten semiconductor material only comes in contact with a material (quartz) with which it is compatible, while the outer layer structure reinforces the quartz tube, which becomes somewhat soft at molten semiconductor temperatures. To further aid in preventing cooling of the molten semiconductor, a distributed, electric resistance heater is in contact with the surface of the quartz tube over most of its length. The quartz tube has short end portions which extend through the surface of the semiconductor melt and which are lef bare of the thermal insulation. The heater is designed to provide an increased heat input per unit area in the region adjacent these end portions.

Defect induced d0 ferromagnetism in a ZnO grain boundary

KAUST Repository

Devi, Assa Aravindh Sasikala

2015-12-08

Several experimental studies have referred to the grain boundary(GB) defect as the origin of ferromagnetism in zinc oxide (ZnO). However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnOGB using the generalized gradient approximation+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. The Znvacancy (VZn) shows a tendency to be attracted to the GB, relative to the bulk-like region. Although no magnetization is obtained from point defect-free GB, VZn induces spin polarization as large as 0.68 μB/atom to the O sites at the GB.Ferromagnetic exchange energy >150 eV is obtained by increasing the concentration of VZn and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d0semiconductors.

Exotic ferromagnetism in the two-dimensional quantum material C3N

Science.gov (United States)

Huang, Wen-Cheng; Li, Wei; Liu, Xiaosong

2018-04-01

The search for and study of exotic quantum states in novel low-dimensional quantum materials have triggered extensive research in recent years. Here, we systematically study the electronic and magnetic structures in the newly discovered two-dimensional quantum material C3N within the framework of density functional theory. The calculations demonstrate that C3N is an indirect-band semiconductor with an energy gap of 0.38 eV, which is in good agreement with experimental observations. Interestingly, we find van Hove singularities located at energies near the Fermi level, which is half that of graphene. Thus, the Fermi energy easily approaches that of the singularities, driving the system to ferromagnetism, under charge carrier injection, such as electric field gating or hydrogen doping. These findings not only demonstrate that the emergence of magnetism stems from the itinerant electron mechanism rather than the effects of local magnetic impurities, but also open a new avenue to designing field-effect transistor devices for possible realization of an insulator-ferromagnet transition by tuning an external electric field.

Defect induced d0 ferromagnetism in a ZnO grain boundary

KAUST Repository

Devi, Assa Aravindh Sasikala; Schwingenschlö gl, Udo; Roqan, Iman S.

2015-01-01

Several experimental studies have referred to the grain boundary(GB) defect as the origin of ferromagnetism in zinc oxide (ZnO). However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnOGB using the generalized gradient approximation+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. The Znvacancy (VZn) shows a tendency to be attracted to the GB, relative to the bulk-like region. Although no magnetization is obtained from point defect-free GB, VZn induces spin polarization as large as 0.68 μB/atom to the O sites at the GB.Ferromagnetic exchange energy >150 eV is obtained by increasing the concentration of VZn and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d0semiconductors.

Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In1 -xFex )2O3

Science.gov (United States)

Green, R. J.; Regier, T. Z.; Leedahl, B.; McLeod, J. A.; Xu, X. H.; Chang, G. S.; Kurmaev, E. Z.; Moewes, A.

2015-10-01

Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In2 O3 films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the crystal lattice which are responsible for the observed room temperature ferromagnetism. Using resonant inelastic x-ray scattering, we map out the near gap electronic structure and provide further support for this conclusion. Serving as a concrete verification of recent theoretical results and indirect experimental evidence, these results solidify the role of impurity-vacancy coupling in oxide-based DMSs.

Positron annihilation studies of vacancy-type defects and room temperature ferromagnetism in chemically synthesized Li-doped ZnO nanocrystals

International Nuclear Information System (INIS)

Ghosh, S.; Khan, Gobinda Gopal; Mandal, K.; Thapa, Samudrajit; Nambissan, P.M.G.

2014-01-01

Highlights: • Evidence of zinc vacancy-induced intrinsic ferromagnetism in Li-doped ZnO. • Modification of defects and properties through alkali metal substitution. • Study of defect-modification using positron annihilation spectroscopy. • New way to prepare ZnO-based magnetic semiconductor for spintronic applications. -- Abstract: In this article, we have investigated the effects of Li incorporation on the lattice defects and room-temperature d 0 ferromagnetic behaviour in ZnO nanocrystals by correlating X-ray photoelectron, photoluminescence and positron annihilation spectroscopic study in details. It is found that at low doping level ( 1+ is an effective substituent of Zn site, but it prefers to occupy the interstitial positions when Li-doping exceeds 7 at.% resulting in lattice expansion and increase of particle sizes. The pristine ZnO nanocrystals exhibit ferromagnetic behaviour which is further enhanced significantly after few percentage of Li-doping in ZnO. The magnitude of both saturation magnetizations (M S ) as well as the Curie temperature (T C ) are found to increase considerably up to Li concentration of 10 at.% and then started to decrease on further Li-doping. The gradual enhancement of Zn vacancy (V Zn ) defects in ZnO nanocrystals due to Li substitution as confirmed from photoluminescence and positron annihilation spectroscopy measurements might be responsible to induce paramagnetic moments within ZnO host. The ferromagnetic exchange interaction between the localised moments of V Zn defects can be mediated though the holes arising due to Li-substitutional (Li Zn ) acceptor defects within ZnO. Hence, Li doping in ZnO favours in stabilizing considerable V Zn defects and thus helps to sustain long-range high-T C ferromagnetism in ZnO which can be a promising material in future spintronics

Positron annihilation studies of vacancy-type defects and room temperature ferromagnetism in chemically synthesized Li-doped ZnO nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Ghosh, S., E-mail: sghoshphysics@gmail.com [S.N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700098 (India); Khan, Gobinda Gopal [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700098 (India); Mandal, K. [S.N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700098 (India); Thapa, Samudrajit; Nambissan, P.M.G. [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700098 (India); Saha Institute of Nuclear Physics, Sector 1, Block AF, Bidhannagar, Kolkata 700064 (India)

2014-03-25

Highlights: • Evidence of zinc vacancy-induced intrinsic ferromagnetism in Li-doped ZnO. • Modification of defects and properties through alkali metal substitution. • Study of defect-modification using positron annihilation spectroscopy. • New way to prepare ZnO-based magnetic semiconductor for spintronic applications. -- Abstract: In this article, we have investigated the effects of Li incorporation on the lattice defects and room-temperature d{sup 0} ferromagnetic behaviour in ZnO nanocrystals by correlating X-ray photoelectron, photoluminescence and positron annihilation spectroscopic study in details. It is found that at low doping level (<7 at.%), Li{sup 1+} is an effective substituent of Zn site, but it prefers to occupy the interstitial positions when Li-doping exceeds 7 at.% resulting in lattice expansion and increase of particle sizes. The pristine ZnO nanocrystals exhibit ferromagnetic behaviour which is further enhanced significantly after few percentage of Li-doping in ZnO. The magnitude of both saturation magnetizations (M{sub S}) as well as the Curie temperature (T{sub C}) are found to increase considerably up to Li concentration of 10 at.% and then started to decrease on further Li-doping. The gradual enhancement of Zn vacancy (V{sub Zn}) defects in ZnO nanocrystals due to Li substitution as confirmed from photoluminescence and positron annihilation spectroscopy measurements might be responsible to induce paramagnetic moments within ZnO host. The ferromagnetic exchange interaction between the localised moments of V{sub Zn} defects can be mediated though the holes arising due to Li-substitutional (Li{sub Zn}) acceptor defects within ZnO. Hence, Li doping in ZnO favours in stabilizing considerable V{sub Zn} defects and thus helps to sustain long-range high-T{sub C} ferromagnetism in ZnO which can be a promising material in future spintronics.

High Gain Hybrid Graphene-Organic Semiconductor Phototransistors

NARCIS (Netherlands)

Huisman, Everardus H.; Shulga, Artem G.; Zomer, Paul J.; Tombros, Nikolaos; Bartesaghi, Davide; Bisri, Satria Zulkarnaen; Loi, Maria A.; Koster, L. Jan Anton; van Wees, Bart J.

2015-01-01

Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a

Physics of semiconductors in high magnetic fields

CERN Document Server

Miura, Noboru

2008-01-01

This book summarizes most of the fundamental physical phenomena which semiconductors and their modulated structures exhibit in high magnetic fields. Readers can learn not only the basic theoretical background but also the present state of the art from the most advanced data in this rapidly growing research area.

Hole-hole correlation effects on magnetic properties of Mn.sub.x./sub.III.sub.1-x./sub.V diluted magnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Byounghak, L.; MacDonald, A. H.

2001-01-01

Roč. 10, - (2001), s. 153-156 ISSN 1386-9477 Institutional research plan: CEZ:AV0Z1010914 Keywords : diluted magnetic semiconductors * ferromagnetism * electronic correlation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.009, year: 2001

High-power semiconductor RSD-based switch

Energy Technology Data Exchange (ETDEWEB)

Bezuglov, V G; Galakhov, I V; Grusin, I A [All-Russian Scientific Research Inst. of Experimental Physics, Sarov (Russian Federation); and others

1997-12-31

The operating principle and test results of a high-power semiconductor RSD-based switch with the following operating parameters is described: operating voltage 25 kV, peak operating current 200 kA, maximum transferred charge 70 C. The switch is intended for use by high-power capacitor banks of state-of-the-art research facilities. The switch was evaluated for applicability in commercial pulsed systems. The possibility of increasing the peak operating current to 500 kA is demonstrated. (author). 4 figs., 2 refs.

Characterization of sup(99m)Tc/sup(99)Tc-hydroxycarboxylic acid chelates by high voltage electrophoresis without supporting material

International Nuclear Information System (INIS)

Hoffmann, I.; Muenze, R.; Dreyer, I.; Dreyer, R.

1982-01-01

Ion mobilities of different sup(99m)Tc- and 99 Tc chelates prepared by reduction of pertechnetate by Sn(II) in the presence of citric, malic, tartaric, gluconic, and α-hydroxyisobutyric acid as ligands have been measured by means of electrophoresis without supporting material. All the chelates investigated proved to be anions in the pH range of 2-7. Both the Tc(V)- and Tc(IV) compounds with the same ligand including the sup(99m)Tc preparation show identical ion mobilities and dissociation characteristics. (author)

Molecular ferromagnetism

International Nuclear Information System (INIS)

Epstein, A.J.

1990-01-01

This past year has been one of substantial advancement in both the physics and chemistry of molecular and polymeric ferromagnets. The specific heat studies of (DMeFc)(TCNE) have revealed a cusp at the three-dimensional ferromagnetic transition temperature with a crossover to primarily 1-D behavior at higher temperatures. This paper discusses these studies

Carbon-based superconductors towards high-Tc superconductivity

CERN Document Server

Haruyama, Junji

2014-01-01

Introduction of Condensed Matter Physics; Spin-state Crossover; Li Ion Battery; Huge Thermoelectric Power; Room-temperature Ferromagnetism; Partially Disordered Antiferromagnetic Transition; Superconductivity; Transport Properties Combined with Charge, Spin, and Orbital; Magnetoresistance and Spin Blocade; Intrinsic Inhomogeneity; Move/diffuse and Charge/discharge Effect.

Elucidation of the enhanced ferromagnetic origin in Mn-doped ZnO nanocrystals embedded into a SiO2 matrix

International Nuclear Information System (INIS)

Lee, Sejoon; Lee, Youngmin; Kim, Deukyoung

2013-01-01

The origin of the enhanced room temperature ferromagnetism in Mn-doped ZnO (ZnO:Mn) nanocrystals is investigated. ZnO:Mn nanocrystals, which were fabricated by using a laser irradiation method with a 248-nm KrF excimer laser, exhibited two-times increase in the spontaneous magnetization (∼0.4 emu/cm 3 at 300 K) compared to the ZnO:Mn thin film (∼0.2 emu/cm 3 at 300 K). The increased exchange integral of J 1 /k B = 51.6 K in ZnO:Mn nanocrystals, in comparison with the ZnO:Mn thin film (J 1 /k B = 46.9 K), is indicative of the enhanced ferromagnetic exchange interaction. This is attributed to the large number of acceptor defects in the SiO 2 -capped ZnO:Mn nanocrystals. Namely, the holes bound to the acceptor defects form microscopic bound-magnetic-polarons with Mn ions; hence, long-range ferromagnetic coupling is enhanced. The results suggest that ferromagnetism in ZnO-based dilute magnetic semiconductors can be controlled by modulating the density of native point defects, which can be chemically and thermodynamically modified during the material synthesis or preparation.

Domain walls in (Ga,Mn)As diluted magnetic semiconductor

Czech Academy of Sciences Publication Activity Database

Sugawara, A.; Kasai, H.; Tonomura, A.; Brown, P.D.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Zemen, Jan; Jungwirth, Tomáš

2008-01-01

Roč. 100, č. 4 (2008), 047202/1-047202/4 ISSN 0031-9007 R&D Projects: GA MŠk LC510; GA ČR GEFON/06/E002; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : dilute ferromagnetic semiconductor * Néel domain walls * electron holography * Landau-Lifshitz-Gilbert simulation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

Spin-dependent transport and functional design in organic ferromagnetic devices

Directory of Open Access Journals (Sweden)

Guichao Hu

2017-09-01

Full Text Available Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

Feshbach shape resonance for high Tc pairing in superlattices of quantum stripes and quantum wells

Directory of Open Access Journals (Sweden)

A Bianconi

2006-09-01

Full Text Available   The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven by the architecture of material: superlattices of quantum wells (intercalated graphite or diborides and superlattices of quantum stripes (doped high Tc cuprate perovskites where the chemical potential is tuned to a Van Hove-Lifshitz singularity (vHs in the electronic energy spectrum of the superlattice associated with the change of the Fermi surface dimensionality in one of the subbands.

Electronic components with yttrium- and bismuth-based high-Tc superconductors

International Nuclear Information System (INIS)

Daginnus, M.; Guettler, B.

1992-01-01

This project investigates the fabrication of microwave components by use of high-Tc superconductors. Detailed descriptions are given of the manufacturing and use of active Y-Ba-Cu-O components. The surface resistance of thin films used in high-quality passive microwave components such as resonators and filters is measured and optimized. (orig./MM) [de

AC losses in high Tc superconductors

International Nuclear Information System (INIS)

Campbell, A.M.

1998-01-01

Full text: Although in principle the AC losses in high Tc superconductors can be calculated from the critical current density, a number of complications make this difficult. The Jc is very field dependent, there are intergranular and intragranular critical currents, the material is anisotropic and there is usually a large demagnetising factor. Care must be taken in interpreting electrical measurements since the voltage depends on the position of the contacts. In spite of these complications the simple theory of Norris has proved surprisingly successful and arguments will be presented as to why this is the case. Results on a range of tapes will be compared with theory and numerical methods for predicting losses discussed. Finally a theory for coupling losses will be given for a composite conductor with high resistance barriers round the filaments

Magnetic pinning in superconductor-ferromagnet multilayers

International Nuclear Information System (INIS)

Bulaevskii, L. N.; Chudnovsky, E. M.; Maley, M. P.

2000-01-01

We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10 6 -10 7 A/cm 2 at high temperatures (but not very close to T c ) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics

Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

International Nuclear Information System (INIS)

Tao Zhikuo; Zhang Rong; Xiu Xiangqian; Cui Xugao; Li Xin; Xie Zili; Zheng Youdou; Li Li; Zheng Rongkun; Ringer, Simon P

2012-01-01

We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3 N clusters are observed with Fe 3 N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn 6 N 2.58 phases are observed with Mn 6 N 2.58 (0002) parallel to GaN(0002). In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN(0002) planes. The magnetization of the Fe over-doped GaN sample is increased, which is ascribed to the participation of ferromagnetic iron and Fe 3 N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn 6 N 2.58 . (semiconductor materials)

Semiconductors put spin in spintronics

International Nuclear Information System (INIS)

Weiss, Dieter

2000-01-01

Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

Science.gov (United States)

Stamopoulos, D; Aristomenopoulou, E

2015-08-26

Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In(1-x)Fe(x))2O3.

Science.gov (United States)

Green, R J; Regier, T Z; Leedahl, B; McLeod, J A; Xu, X H; Chang, G S; Kurmaev, E Z; Moewes, A

2015-10-16

Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In2O3 films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the crystal lattice which are responsible for the observed room temperature ferromagnetism. Using resonant inelastic x-ray scattering, we map out the near gap electronic structure and provide further support for this conclusion. Serving as a concrete verification of recent theoretical results and indirect experimental evidence, these results solidify the role of impurity-vacancy coupling in oxide-based DMSs.

Semiconductor crystal high resolution imager

Science.gov (United States)

Levin, Craig S. (Inventor); Matteson, James (Inventor)

2011-01-01

A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

Measurement of magnetization of Ga1−xMnxAs by ferromagnetic resonance

International Nuclear Information System (INIS)

Hagmann, J.A.; Traudt, K.; Zhou, Y.Y.; Liu, X.; Dobrowolska, M.; Furdyna, J.K.

2014-01-01

In this paper, we extend ferromagnetic resonance (FMR) studies of thin layers of the ferromagnetic semiconductor Ga 1−x Mn x As to the analysis of the integrated intensity of the resonance in order to obtain information on the total spin in the sample directly involved in ferromagnetically-ordered magnetization. A theoretical model is proposed for the dependences of the FMR integrated intensity and linewidth on the orientation of the applied magnetic field as the field direction is varied from in-plane to normal-to-the-plane of the Ga 1−x Mn x As layer. The strain-induced magnetic anisotropy of Ga 1−x Mn x As presents a significant challenge to conventional FMR linewidth and integrated intensity models. The new model predicts that the integrated FMR intensity is proportional to the saturation magnetization M S of the sample, with the constant of proportionality varying as a function of the polar and azimuthal angles of the applied magnetic field. The angular and temperature behaviors of the integrated intensity and linewidth of the FMR predicted by the proposed model are in good qualitative agreement with measurements. - Highlights: • We extend ferromagnetic resonance to the analysis of total magnetization of thin film Ga 1−x Mn x As. • We formulate a theoretical model for FMR integrated intensity and linewidth. • The model predicts that integrated FMR intensity is proportional to magnetization. • Predictions made by the model are in good qualitative agreement with measurements

Quantum Monte Carlo simulations for high-Tc superconductors

International Nuclear Information System (INIS)

Muramatsu, A.; Dopf, G.; Wagner, J.; Dieterich, P.; Hanke, W.

1992-01-01

Quantum Monte Carlo simulations for a multi-band model of high-Tc superconductors are reviewed with special emphasis on the comparison of different observabels with experiments. It is shown that a give parameter set of the three-band Hubbard model leads to a consistent description of normal-state propteries as well as pairing correlation function for the copper-oxide superconductors as a function of doping and temperature. (orig.)

Nanoscale insight of high piezoelectricity in high-TC PMN-PH-PT ceramics

Science.gov (United States)

Zhu, Rongfeng; Zhang, Qihui; Fang, Bijun; Zhang, Shuai; Zhao, Xiangyong; Ding, Jianning

2018-03-01

The piezoelectric properties of the high-Curie temperature (high-TC) 0.15Pb(Mg1/3Nb2/3)O3-0.38PbHfO3-0.47PbTiO3 (0.15PMN-0.38PH-0.47PT) ceramics prepared by three different methods were compared. The 0.15PMN-0.38PH-0.47PT ceramics synthesized by the partial oxalate route exhibit the optimum properties, in which d33* = 845.3 pm/V, d33 = 456.2 pC/N, Kp = 67.2%, and TC = 291 °C. The nanoscale origin of the high piezoelectric response of the 0.15PMN-0.38PH-0.47PT ceramics was investigated by piezoresponse force microscopy (PFM) using the ceramics synthesized by the partial oxalate route. Large quantities of fine stripe submicron ferroelectric domains are observed, which form large island domains. In order to give further insights into the piezoelectric properties of the 0.15PMN-0.38PH-0.47PT ceramics from a microscopic point of view, the local poling experiments and local switching spectroscopy piezoresponse force microscopy (SS-PFM) were investigated, from which the local converse piezoelectric coefficient d33*(l) is calculated as 220 pm/V.

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

Czech Academy of Sciences Publication Activity Database

Stolichnov, I.; Riester, S.W.E.; Mikheev, E.; Setter, N.; Rushforth, A.W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, Tomáš; Trodahl, H.J.

2011-01-01

Roč. 22, č. 25 (2011), 254004/1-254004/13 ISSN 0957-4484 R&D Projects: GA MŠk LC510; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : ferroelectrics * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.979, year: 2011

Ferromagnetic alloy material CoFeC with high thermal tolerance in MgO/CoFeC/Pt structure and comparable intrinsic damping factor with CoFeB

Science.gov (United States)

Chen, Shaohai; Zhou, Jing; Lin, Weinan; Yu, Jihang; Guo, Rui; Poh, Francis; Shum, Danny; Chen, Jingsheng

2018-02-01

The thermal tolerance and perpendicular magnetic anisotropy (PMA) of ferromagnetic alloy Co40Fe40C20 in the structure MgO/CoFeC/Pt (or Ta) were investigated and compared with the commonly used CoFeB alloy. It is found that the PMA of CoFeC with {{K}i,CoFeC}=2.21 erg c{{m}-2} , which is 59% higher than that of CoFeB, can be obtained after proper post-annealing treatment. Furthermore, CoFeC alloy provides better thermal tolerance to temperature of 400 °C than CoFeB. The studies on ferromagnetic resonance show that the intrinsic damping constant α in of Co40Fe40C20 alloy is 0.0047, which is similar to the reported value of 0.004 for Co40Fe40B20 alloy. The comprehensive comparisons indicate that CoFeC alloy is a promising candidate for the application of the integration of spin torque transfer magnetic random access memory with complementary metal-oxide semiconductor processes.

Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

Science.gov (United States)

Niedzielski, Bethany Maria

A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this

Defect induced d{sup 0} ferromagnetism in a ZnO grain boundary

Energy Technology Data Exchange (ETDEWEB)

Assa Aravindh, Sasikala Devi; Schwingenschloegl, Udo; Roqan, Iman S, E-mail: iman.roqan@kaust.edu.sa [Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 2955-6900 (Saudi Arabia)

2015-12-14

Several experimental studies have referred to the grain boundary (GB) defect as the origin of ferromagnetism in zinc oxide (ZnO). However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnO GB using the generalized gradient approximation+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. The Zn vacancy (V{sub Zn}) shows a tendency to be attracted to the GB, relative to the bulk-like region. Although no magnetization is obtained from point defect-free GB, V{sub Zn} induces spin polarization as large as 0.68 μ{sub B}/atom to the O sites at the GB. Ferromagnetic exchange energy >150 eV is obtained by increasing the concentration of V{sub Zn} and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d{sup 0} semiconductors.

Critical current of high Tc superconducting Bi223/Ag tapes

NARCIS (Netherlands)

Huang, Y.; ten Haken, Bernard; ten Kate, Herman H.J.

1998-01-01

The magnetic field dependence of the critical current of various high Tc superconducting Bi2223/Ag tapes indicates that the transport current is carried through two paths: one is through weakly-linked grain boundaries (Josephson junctions); another is through well-connected grains. The critical

Ferromagnetic transition temperature enhancement in (Ga, Mn)As semiconductors by carbon codoping

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Mašek, Jan; Sinova, J.; MacDonald, A. H.

2003-01-01

Roč. 68, č. 16 (2003), s. 161202-1 - 161202-4 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA AV ČR IAA1010214 Institutional research plan: CEZ:AV0Z1010914 Keywords : (Ga, Mn)(As, C) semiconductors * tight-binding coherent-potential approximation * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

Science.gov (United States)

Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

2017-11-01

The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

Strain induced ferromagnetism and large magnetoresistance of epitaxial La1.5Sr0.5CoMnO6 thin films

Science.gov (United States)

Krishna Murthy, J.; Jyotsna, G.; N, Nileena; Anil Kumar, P. S.

2017-08-01

In this study, the structural, magnetic, and magneto-transport properties of La1.5Sr0.5CoMnO6 (LSCMO) thin films deposited on a SrTiO3 (001) substrate were investigated. A normal θ/2θ x-ray diffraction, rocking curve, ϕ-scan, and reciprocal space mapping data showed that prepared LSCMO thin films are single phase and highly strained with epitaxial nature. Temperature vs. magnetization of LSCMO films exhibits strain-induced ferromagnetic ordering with TC ˜ 165 K. In contrast to the bulk samples, there was no exchange bias and canted type antiferromagnetic and spin glass behavior in films having thickness (t) ≤ 26 nm. Temperature dependent resistivity data were explained using Schnakenberg's model and the polaron hopping conduction process. The slope change in resistivity and magnetoresistance maximum (˜65%) around TC indicates the existence of a weak double exchange mechanism between the mixed valence states of transition metal ions. Suppression of spin dependent scattering with the magnetic field is attributed for the large negative magnetoresistance in LSCMO films.

Impurity scattering effect on charge transport in high-Tc cuprate junctions

International Nuclear Information System (INIS)

Tanaka, Y.; Asano, Y.; Kashiwaya, S.

2004-01-01

It is known that the zero-bias conductance peak (ZBCP) is expected in tunneling spectra of normal-metal/high-Tc cuprate junctions because of the formation of the midgap Andreev resonant states (MARS) at junction interfaces. In the present review, we report the recent theoretical study of impurity scattering effects on the tunneling spectroscopy. In the former part of the present paper, we discuss impurity effects in normal metal. We calculate tunneling conductance for diffusive normal metal (DN)/high Tc cuprate junctions based on the Keldysh Green's function technique. Besides the ZBCP due to the MARS, we can expect ZBCP caused by the different origin, i.e., the coherent Andreev reflection (CAR) assisted by the proximity effect in DN. Their relative importance depends on the angle a between the interface normal and the crystal axis of high-Tc superconductors. At α = 0, we find the ZBCP by the CAR for low transparent junctions with small Thouless energies in DN; this is similar to the case of diffusive normal metal/insulator/s-wave superconductor junctions. Under increase of α from zero to π/4, the contribution of MARS to ZBCP becomes more prominent and the effect of the CAR is gradually suppressed. Such complex spectral features would be observable in conductance spectra of high-Tc junctions at very low temperatures. In the latter part of our paper, we study impurity effects in superconductors. We consider impurities near the junction interface on the superconductor side. The conductance is calculated from the Andreev and the normal reflection coefficients which are estimated by using the single-site approximation in an analytic calculation and by the recursive Green function method in a numerical simulation. We find splitting of the ZBCP in the presence of the time reversal symmetry. Thus the zero-field splitting of ZBCP in the experiment does not perfectly prove an existence of broken time reversal symmetry state

Comparison between high-resolution computed tomography and 99mTc-technegas SPECT pulmonary emphysema

International Nuclear Information System (INIS)

Nakano, Satoru; Satoh, Katashi; Takahashi, Kazue

1996-01-01

Scintigraphy with 99m Tc-technegas was recently introduced for clinical imaging of lung ventilation. This method has been found to be useful in emergencies, to be more suitable for single photon emission computed tomography (SPECT) than other agents used in ventilation scintigraphy, and could reveal abnormalities in ventilation more easily than high resolution computed tomography (HRCT) in pulmonary emphysema. We compared 99m Tc-technegas SPECT with HRCT in six regions: the right upper, middle, and lower lobes, the left upper lobe, the lingula, and the left lower lobe, in 15 patients with pulmonary emphysema. Patients with centrilobular emphysema tended to show stronger changes in upper lobes than in lower lobes on both 99m Tc-technegas SPECT and HRCT. Some regions showed no change on HRCT but various changes on 99m Tc-SPECT. Patients with panlobular emphysema showed severe changes on 99m Tc-SPECT in lower lung fields in which well-demarcated areas of low attenuation were not seen on HRCT. We conclude that 99m Tc-SPECT is useful for detecting early changes and panlobular changes in pulmonary emphysema. (author)

Magnetic pinning in superconductor-ferromagnet multilayers

Energy Technology Data Exchange (ETDEWEB)

Bulaevskii, L. N. [Department of Physics and Astronomy, CUNY Lehman College 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Chudnovsky, E. M. [Department of Physics and Astronomy, CUNY Lehman College, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Maley, M. P. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2000-05-01

We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10{sup 6}-10{sup 7} A/cm{sup 2} at high temperatures (but not very close to T{sub c}) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics.

Ion implantation in compound semiconductors for high-performance electronic devices

International Nuclear Information System (INIS)

Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

1996-01-01

Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb

High precision stress measurements in semiconductor structures by Raman microscopy

Energy Technology Data Exchange (ETDEWEB)

Uhlig, Benjamin

2009-07-01

Stress in silicon structures plays an essential role in modern semiconductor technology. This stress has to be measured and due to the ongoing miniaturization in today's semiconductor industry, the measuring method has to meet certain requirements. The present thesis deals with the question how Raman spectroscopy can be used to measure the state of stress in semiconductor structures. In the first chapter the relation between Raman peakshift and stress in the material is explained. It is shown that detailed stress maps with a spatial resolution close to the diffraction limit can be obtained in structured semiconductor samples. Furthermore a novel procedure, the so called Stokes-AntiStokes-Difference method is introduced. With this method, topography, tool or drift effects can be distinguished from stress related influences in the sample. In the next chapter Tip-enhanced Raman Scattering (TERS) and its application for an improvement in lateral resolution is discussed. For this, a study is presented, which shows the influence of metal particles on the intensity and localization of the Raman signal. A method to attach metal particles to scannable tips is successfully applied. First TERS scans are shown and their impact on and challenges for high resolution stress measurements on semiconductor structures is explained. (orig.)

Energy gap of ferromagnet-superconductor bilayers

Energy Technology Data Exchange (ETDEWEB)

Halterman, Klaus; Valls, Oriol T

2003-10-15

The excitation spectrum of clean ferromagnet-superconductor bilayers is calculated within the framework of the self-consistent Bogoliubov-de Gennes theory. Because of the proximity effect, the superconductor induces a gap in the ferromagnet spectrum, for thin ferromagnetic layers. The effect depends strongly on the exchange field in the ferromagnet. We find that as the thickness of the ferromagnetic layer increases, the gap disappears, and that its destruction arises from those quasiparticle excitations with wave vectors mainly along the interface. We discuss the influence that the interface quality and Fermi energy mismatch between the ferromagnet and superconductor have on the calculated energy gap. We also evaluate the density of states in the ferromagnet, and we find it in all cases consistent with the gap results.

High Power Laser Beam Welding of Thick-walled Ferromagnetic Steels with Electromagnetic Weld Pool Support

Science.gov (United States)

Fritzsche, André; Avilov, Vjaceslav; Gumenyuk, Andrey; Hilgenberg, Kai; Rethmeier, Michael

The development of modern high power laser systems allows single pass welding of thick-walled components with minimal distortion. Besides the high demands on the joint preparation, the hydrostatic pressure in the melt pool increases with higher plate thicknesses. Reaching or exceeding the Laplace pressure, drop-out or melt sagging are caused. A contactless electromagnetic weld support system was used for laser beam welding of thick ferromagnetic steel plates compensating these effects. An oscillating magnetic field induces eddy currents in the weld pool which generate Lorentz forces counteracting the gravity forces. Hysteresis effects of ferromagnetic steels are considered as well as the loss of magnetization in zones exceeding the Curie temperature. These phenomena reduce the effective Lorentz forces within the weld pool. The successful compensation of the hydrostatic pressure was demonstrated on up to 20 mm thick plates of duplex and mild steel by a variation of the electromagnetic power level and the oscillation frequency.

Room temperature d (0) ferromagnetism in hole doped Y2O3: widening the choice of host to tailor DMS.

Science.gov (United States)

Chakraborty, Brahmananda; Ramaniah, Lavanya M

2016-08-24

Transition metal-free-ferromagnetism in diluted magnetic semiconductors (DMS) is of much current interest in view of the search for more efficient DMS materials for spintronics applications. Our DFT results predict for the first time, that impurities from group1A (Li(+), Na(+), K(+)) doped on Y2O3 can induce a magnetic signature with a magnetic moment around 2.0 μ B per defect at hole concentrations around 1.63  ×  10(21) cm(-3), which is one order less than the critical hole density of ZnO with ferromagnetic coupling large enough to promote room temperature ferromagnetism. The induction of room temperature ferromagnetism by hole doping with an impurity atom from group 1A, which injects two holes per defect in the system, implies that the recommendation of three holes per defect given in the literature, which puts a restriction on the choice of host material and the impurity, is not a necessary criterion for hole induced room temperature ferromagnetism. DFT simulations with the generalized gradient approximation (GGA), confirmed by the more sophisticated hybrid functional, Heyd-Scuseria-Ernzerhof (HSE06), predict that the magnetic moment is mostly contributed by O atoms surrounding the impurity atom and the magnetic moment scale up with impurity concentration which is a positive indicator for practical applications. We quantitatively and extensively demonstrate through the analysis of the density of states and ferromagnetic coupling that the Stoner criterion is satisfied by pushing the Fermi level inside the valence band to activate room temperature ferromagnetism. The stability of the structure and the persistence of ferromagnetism at room temperature were demonstrated by ab initio MD simulations and computation of Curie temperature through the mean field approximation. This study widens the choice of host oxides to tailor DMS for spintronics applications.

Tunneling Conductance in Ferromagnetic Metal/Normal Metal/Spin-Singlet -Wave Ferromagnetic Superconductor Junctions

Directory of Open Access Journals (Sweden)

Hamidreza Emamipour

2013-01-01

Full Text Available In the framework of scattering theory, we study the tunneling conductance in a system including two junctions, ferromagnetic metal/normal metal/ferromagnetic superconductor, where ferromagnetic superconductor is in spin-singlet -wave pairing state. The non-magnetic normal metal is placed in the intermediate layer with the thickness ( which varies from 1 nm to 10000 nm. The interesting result which we have found is the existence of oscillations in conductance curves. The period of oscillations is independent of FS and FN exchange field while it depends on . The obtained results can serve as a useful tool to determine the kind of pairing symmetry in ferromagnetic superconductors.

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

Science.gov (United States)

Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

2016-01-01

Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor

Czech Academy of Sciences Publication Activity Database

Wunderlich, J.; Jungwirth, Tomáš; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

2007-01-01

Roč. 310, - (2007), s. 1883-1888 ISSN 0304-8853 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

KAUST Repository

Manchon, Aurelien

2018-01-29

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

KAUST Repository

Manchon, Aurelien; Miron, I. M.; Jungwirth, T.; Sinova, J.; Zelezný , J.; Thiaville, A.; Garello, K.; Gambardella, P.

2018-01-01

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

International Nuclear Information System (INIS)

Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

2011-01-01

(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

Electronic Instability at High Flux-Flow Velocities in High-Tc Superconducting Films

DEFF Research Database (Denmark)

Doettinger, S. G.; Huebener, R. P.; Gerdemann, R.

1994-01-01

At high flux-flow velocities in type-II superconductors the nonequilibrium distribution of the quasiparticles leads to an electronic instability and an aburpt switching into a state with higher electric resistivity, as predicted by Larkin and Ovchinnikow (LO). We report the first obervation...... of this effect in a high-temperature superconductor, namely in epitaxial c-axis oriented films of YBa(2)Cu3O(7)-(delta). Using the LO therory, we have extracted from out results the inelastic quasiparticle scattering rare tau(in)(-1), which strongly decreases with decreasing temperature below T-c...

Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors

International Nuclear Information System (INIS)

Jun-Qing, Zhao; Shi-Zhu, Qiao; Zhen-Feng, Jia; Ning-Yu, Zhang; Yan-Ju, Ji; Yan-Tao, Pang; Ying, Chen; Gang, Fu

2008-01-01

We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices

Anisotropic exchange interaction induced by a single photon in semiconductor microcavities

Science.gov (United States)

Chiappe, G.; Fernández-Rossier, J.; Louis, E.; Anda, E. V.

2005-12-01

We investigate coupling of localized spins in a semiconductor quantum dot embedded in a microcavity. The lowest cavity mode and the quantum dot exciton are coupled and close in energy, forming a polariton. The fermions forming the exciton interact with localized spins via exchange. Exact diagonalization of a Hamiltonian in which photons, spins, and excitons are treated quantum mechanically shows that a single polariton induces a sizable indirect anisotropic exchange interaction between spins. At sufficiently low temperatures strong ferromagnetic correlations show up without an appreciable increase in exciton population. In the case of a (Cd,Mn)Te quantum dot, Mn-Mn ferromagnetic coupling is still significant at 1 K : spin-spin correlation around 3 for exciton occupation smaller than 0.3. We find that the interaction mediated by photon-polaritons is 10 times stronger than the one induced by a classical field for equal Rabi splitting.

Determination of Tc-99 in radioactive wastes; Determinacion de Tc-99 en desechos radiactivos

Energy Technology Data Exchange (ETDEWEB)

Rivera S, A. A.

2015-07-01

Tc-99 is a fission product and one of the most important radionuclides from the view point of safety assessment for the disposal of radioactive waste because of its long half-life (2.1 x 10{sup 5} years) and high mobility in soil-water systems, if this is released into the environment in significant quantities can concentrate on plants and animals. Tc-99 is a pure beta emitter with a maximum energy of 292 KeV, so their quantification imposes destructive methods to be analyzed by liquid scintillation. Therefore the quantification of Tc-99 in ion exchange resins requires of the mineralization of these and separation of Tc-99 of other radioisotopes present in the resin. Therefore the object of this thesis is to develop a quantification method of Tc-99 content in spent exchange resins. So in order to track the behavior of technetium during digestion exchange resins and radiochemical separation, given its high volatility, in this work the {sup 99m}Tc is used. To determine the degree of mineralization of the resins, an analysis was performed by chromatography. Subsequently the method used to determine the percentage of {sup 99m}Tc aerosolized during mineralization of resin is described. After the method for the radiochemical separation of {sup 99m}Tc is presented by liquid-liquid extraction using crown ether as extractant; for this testing was performed by varying the molarity of the extractant, the ratio of solvent extractant, type of digestion of the resin and the presence of Sr-85, in order to study the behavior of {sup 99m}Tc in the presence of this radioisotope. Finally, a track beta spectra of a sample of {sup 99m}Tc eluted from a generator {sup 99}Mo/{sup 99m}Tc function of time was performed. (Author)

The half-metallic ferromagnetism character in Be1−xVxY (Y=Se and Te) alloys: An ab-initio study

International Nuclear Information System (INIS)

Sajjad, M.; Manzoor, Sadia; Zhang, H.X.; Noor, N.A.; Alay-e-Abbas, S.M.; Shaukat, A.; Khenata, R.

2015-01-01

Ab-initio calculations for V-doped BeSe and BeTe semiconductors are performed by means of all-electrons full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. The structural properties are optimized using the Wu-Cohen generalized gradient approximation functional, whereas modified Becke and Jhonson local density approximation functional has been employed for evaluating the spin-polarized electronic and magnetic properties. Magnetic stability at various doping concentrations in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering is investigated by comparing the minimum total energies and enthalpies of formation (ΔH). Studied band structures, density of states, total energy, exchange interactions and magnetic moments manifest both alloys with half-metallic ferromagnetic behavior. Moreover, their valance bands are found to be paired ferromagnetically with V atoms. Furthermore, it was observed that the magnetic moment of vanadium atom reduces from free space charge value due to p–d hybridization which yields small magnetic moments on the Be, Se and Te sites. - Highlights: • Density functional calculations for V-doped BeSe and BeTe are performed. • V-doped BeSe and BeTe are found to be stable half-metallic ferromagnetism. • Improved electronic properties are achieved using mBJLDA which confirm HMF. • The half-metallic gaps show non-linear variation with increasing dopant concentration

Highly Sensitive and Very Stretchable Strain Sensor Based on a Rubbery Semiconductor.

Science.gov (United States)

Kim, Hae-Jin; Thukral, Anish; Yu, Cunjiang

2018-02-07

There is a growing interest in developing stretchable strain sensors to quantify the large mechanical deformation and strain associated with the activities for a wide range of species, such as humans, machines, and robots. Here, we report a novel stretchable strain sensor entirely in a rubber format by using a solution-processed rubbery semiconductor as the sensing material to achieve high sensitivity, large mechanical strain tolerance, and hysteresis-less and highly linear responses. Specifically, the rubbery semiconductor exploits π-π stacked poly(3-hexylthiophene-2,5-diyl) nanofibrils (P3HT-NFs) percolated in silicone elastomer of poly(dimethylsiloxane) to yield semiconducting nanocomposite with a large mechanical stretchability, although P3HT is a well-known nonstretchable semiconductor. The fabricated strain sensors exhibit reliable and reversible sensing capability, high gauge factor (gauge factor = 32), high linearity (R 2 > 0.996), and low hysteresis (degree of hysteresis wearable smart gloves. Systematic investigations in the materials design and synthesis, sensor fabrication and characterization, and mechanical analysis reveal the key fundamental and application aspects of the highly sensitive and very stretchable strain sensors entirely from rubbers.

Magnetization and Hall effect under high pressure in NaV 6O 11

Science.gov (United States)

Naka, T.; Matsumoto, T.; Kanke, Y.; Murata, K.

1995-02-01

We have investigated the pressure dependences of magnetization and the Hall coefficient in the ferromagnetic vanadium oxide NaV 6O 11 up to 1.2 GPa. Structural transitions (hexagonal-hexagonal-orthorhombic) occur at TH = 245 K and TL = 35 K at ambient pressure. Meanwhile, the susceptibility obeys the Curie-Weiss law X = C/( T - θ) with antiferromagnetic correlation of θ TH, with ferromagnetic correlation of θ TH. The spontaneous magnetization appears below Tc = 64.2 K. With increasing pressure, Tc and magnetization M( T TH increases. The sign of the Hall coefficient changes continuously (negative-positive-negative) at around T ≈ 170 K and 75 K.

The disordered Bose condensate in two dimensions: application to high-Tc superconductors

International Nuclear Information System (INIS)

Gold, A.

1992-01-01

We calculate the dynamical conductivity for a weakly disordered Bose condensate in two dimensions. The disorder is due to neutral impurities. We compare the asymptotic laws (for small and large frequencies) for neutral impurities with the ones for charged impurities. Universal functions for the dynamical transport properties are derived. The plasmon density of states shows a linear increase with energy for intermediate energies and a peak structure at larger energies. Our theoretical results are compared with experimental results (far-infrared, electron-energy-loss and Raman spectroscopy) found in the high-Tc superconductor YBa 2 Cu 3 O 7-δ . The occurrence of a quasi-gap in a disordered Bose condensate is described and discussed in connection with experiments on high-Tc superconductors. (orig.)

Ferromagnetic nanoparticles for magnetic hyperthermia and thermoablation therapy

Energy Technology Data Exchange (ETDEWEB)

Kita, Eiji; Kayano, Takeru; Sato, Suguru; Minagawa, Makoto; Yanagihara, Hideto; Kishimoto, Mikio [Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573 (Japan); Oda, Tatsuya; Hashimoto, Shinji; Yamada, Keiichi; Ohkohchi, Nobuhiro [Department of Surgery, Advanced Biomedical Applications, Graduate School of Comprehensive Human Science, University of Tsukuba, Tsukuba 305-8575 (Japan); Mitsumata, Chiharu, E-mail: kita@bk.tsukuba.ac.j [Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)

2010-12-01

The use of ferromagnetic nanoparticles for hyperthermia and thermoablation therapies has shown great promise in the field of nanobiomedicine. Even local hyperthermia offers numerous advantages as a novel cancer therapy; however, it requires a remarkably high heating power of more than 1 kW g{sup -1} for heat agents. As a candidate for high heat generation, we focus on ferromagnetic nanoparticles and compare their physical properties with those of superparamagnetic substances. Numerical simulations for ideal single-domain ferromagnetic nanoparticles with cubic and uniaxial magnetic symmetries were carried out and MH curves together with minor loops were obtained. From the simulation, the efficient use of an alternating magnetic field (AMF) having a limited amplitude was discussed. Co-ferrite nanoparticles with various magnitudes of coercive force were produced by co-precipitation and a hydrothermal process. A maximum specific loss power of 420 W g{sup -1} was obtained using an AMF at 117 kHz with H{sub 0} = 51.4 kA m{sup -1} (640 Oe). The relaxation behaviour in the ferromagnetic state below the superparamagnetic blocking temperature was examined by Moessbauer spectroscopy.

Method for depositing high-quality microcrystalline semiconductor materials

Science.gov (United States)

Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

2011-03-08

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Physical properties of high-Tc superconducting oxides. Modification of tc using organic dopants. Final report. Proprietes physiques d'oxydes supraconducteurs a haute Tc. Modification de tc sous l'effet de dopants organiques

Energy Technology Data Exchange (ETDEWEB)

Brau, A

1993-01-01

An attempt was made to significantly modify the Tc transition temperature of certain copper-based superconducting oxides by introducing organic or mineral dopants, and to study the mobility of 300K-carriers in crystallized tallium-base superconducting oxides. Since the critical transition temperature of superconducting oxides is highly influenced by the density of the free carriers they contain, the authors tried making superconducting powders react with either an organic electron acceptor or a mineral compound. The goal was to increase the density of the holes by altering the copper's degree of oxidation. Their preparatory work showed a direct charge-transfer reaction between the electron-donor copper and the acceptor TCNQ and studied the degree to which the electron acceptor can alter the copper's oxidation. Initial results also showed that dopants can affect superconducting Tc and the course of R(T) curves.

Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors.

Science.gov (United States)

Irkhin, P; Najafov, H; Podzorov, V

2015-10-19

Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of "gauge effect" in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors.

Characteristics of YBa2Cu3O7 high-Tc superconductor with KCl

Science.gov (United States)

Yoon, Ki Hyun; Chang, Sung Sik

1990-03-01

The lattice parameters, microstructural change, transition temperature, and electrical properties of the YBa2-xKxCu3O7 high-Tc superconductor in the range from x=0 to x=0.25 have been investigated. The high-Tc orthorhombic phase increases with increasing KCl up to x=0.20, above which it decreases. The lattice parameters decrease with increasing KCl up to x=0.10, and then become nearly uniform. The grain size increases with increasing KCl up to x=0.20 due to its role as sintering agent. The specimens with x=0.2 have transition temperatures of 96 K and high magnetic susceptibility due to the contraction of lattice parameters a and b and the increase of orthorhombic distortion.

Heat dissipation due to ferromagnetic resonance in a ferromagnetic metal monitored by electrical resistance measurement

International Nuclear Information System (INIS)

Yamanoi, Kazuto; Yokotani, Yuki; Kimura, Takashi

2015-01-01

The heat dissipation due to the resonant precessional motion of the magnetization in a ferromagnetic metal has been investigated. We demonstrated that the temperature during the ferromagnetic resonance can be simply detected by the electrical resistance measurement of the Cu strip line in contact with the ferromagnetic metal. The temperature change of the Cu strip due to the ferromagnetic resonance was found to exceed 10 K, which significantly affects the spin-current transport. The influence of the thermal conductivity of the substrate on the heating was also investigated

Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

International Nuclear Information System (INIS)

Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

2006-01-01

We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

sup(99m)Tc-2-mercaptopropionylglycine

International Nuclear Information System (INIS)

Saji, Hideo; Odori, Teruo; Morita, Rikushi; Yokoyama, Akira; Tanaka, Hisashi.

1979-01-01

Labeling of 2-mercaptopropionylglycine (2-MPG) with sup(99m)Tc, was studied and its chemical characteristics were examined. Further, biliary excretion behavior of this complex was comparatively estimated in mice, rats and rabbits. sup(99m)Tc-2-MPG was rapidly excreted in large quantities into the bile in mice and rats: within 1 hr after injection, 51% of the injected dose was recovered from the bile in rats. On the other hand, the ligand exchange reaction between this complex and penicillamine indicates that a low hydrolyzed sup(99m)Tc species is coordinated with 2-MPG. These results suggest that a low hydrolyzed sup(99m)Tc state is an effective feature in biliary excretion behavior of sup(99m)Tc compounds. Another interesting in vivo behavior of sup(99m)Tc-2-MPG is the difference observed in mice and rabbits: in mice, very high sup(99m)Tc activity is concentrated in the gallbladder and the clearance from tissues other than the gallbladder is rapid, whereas in rabbits, although a rapid and high excretion into the gallbladder is observed, a considerable high sup(99m)Tc activity is retained in the liver and the kidney. One reason for this different in vivo behavior is the low stability of this complex at high dilution: a big animal has the large dilution volume which lead to higher decomposition estimated by the higher liver and kidney retention or the lower bile excretion. In conclusion, studies carried on sup(99m)Tc-2-MPG showed a good biliary excretion behavior but an in vivo unstableness in big animals. (author)

Vacancy induced half-metallicity in half-Heusler semiconductors

KAUST Repository

Zhu, Zhiyong

2011-09-28

First-principles calculations are performed to investigate the effect of vacancies on the electronic structure and magnetic properties of the two prototypical half-Heusler semiconductors NiTiSn and CoTiSb. The spin degeneracy of the host materials is broken for all types of isolated vacancies under consideration, except for Ni-deficient NiTiSn. A half-metallic character is identified in Sn-deficient NiTiSn and Co/Ti/Sb-deficient CoTiSb. We can explain our findings by introducing an extending Slater-Pauling rule for systems with defects. A ferromagnetic ordering of the local moments due to double exchange appears to be likely.

Ultrafast magnetization dynamics in diluted magnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Morandi, O [INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg (France); Hervieux, P-A; Manfredi, G [Institut de Physique et Chimie des Materiaux de Strasbourg, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: morandi@dipmat.univpm.it

2009-07-15

We present a dynamical model that successfully explains the observed time evolution of the magnetization in diluted magnetic semiconductor quantum wells after weak laser excitation. Based on the pseudo-fermion formalism and a second-order many-particle expansion of the exact p-d exchange interaction, our approach goes beyond the usual mean-field approximation. It includes both the sub-picosecond demagnetization dynamics and the slower relaxation processes that restore the initial ferromagnetic order in a nanosecond timescale. In agreement with experimental results, our numerical simulations show that, depending on the value of the initial lattice temperature, a subsequent enhancement of the total magnetization may be observed within the timescale of a few hundred picoseconds.

STM observations of ferromagnetic clusters

International Nuclear Information System (INIS)

Wawro, A.; Kasuya, A.

1998-01-01

Co, Fe and Ni clusters of nanometer size, deposited on silicon and graphite (highly oriented pyrolytic graphite), were observed by a scanning tunneling microscope. Deposition as well as the scanning tunneling microscope measurements were carried out in an ultrahigh vacuum system at room temperature. Detailed analysis of Co cluster height was done with the scanning tunneling microscope equipped with a ferromagnetic tip in a magnetic field up to 70 Oe. It is found that bigger clusters (few nanometers in height) exhibit a dependence of their apparent height on applied magnetic field. We propose that such behaviour originates from the ferromagnetic ordering of cluster and associate this effect to spin polarized tunneling. (author)

Location of Mn sites in ferromagnetic Ga.sub.1-x./sub.Mn.sub.x./sub. As studied by means of X-ray diffuse scattering holography

Czech Academy of Sciences Publication Activity Database

Kopecký, Miloš; Kub, Jiří; Bussetto, E.; Lausi, A.; Cukr, Miroslav; Novák, Vít; Olejník, Kamil; Wright, J.P.; Fábry, Jan

2006-01-01

Roč. 39, - (2006), s. 735-738 ISSN 0021-8898 R&D Projects: GA AV ČR IAA100100529; GA ČR GA202/04/1519 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs ferromagnetic semiconductors * x-ray holography * diffuse scattering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.495, year: 2006

Magnetic nesting and co-existence of ferromagnetism and superconductivity

International Nuclear Information System (INIS)

Elesin, V.F.; Kapaev, V.V.; Kopaev, Yu.V.

2004-01-01

In the case of providing for the magnetic nesting conditions of the electron spin dispersion law the co-existence of ferromagnetism and superconductivity is possible by any high magnetization. The co-existence of ferromagnetism and superconductivity in the layered cuprate compounds of the RuSr 2 GdCu 2 O 8 -type is explained on this basis, wherein due to the nonstrict provision of the magnetic nesting condition there exists the finite but sufficiently high critical magnetization [ru

A triple-bridged azido-Cu(II) chain compound fine-tuned by mixed carboxylate/ethanol linkers displays slow-relaxation and ferromagnetic order: synthesis, crystal structure, magnetic properties and DFT calculations.

Science.gov (United States)

Liu, Xiangyu; Chen, Sanping; Grancha, Thais; Pardo, Emilio; Ke, Hongshan; Yin, Bing; Wei, Qing; Xie, Gang; Gao, Shengli

2014-11-07

A new azido-Cu(II) compound, [Cu(4-fba)(N3)(C2H5OH)] (4-fba = 4-fluorobenzoic acid) (1), has been synthesized and characterized. The X-ray crystal structure analysis demonstrates that only one crystallographically independent Cu(II) ion in the asymmetric unit of 1 exhibits a stretched octahedral geometry in which two azido N atoms and two carboxylic O atoms locate in the equatorial square, while two ethanol O atoms occupy the apical positions, forming a 1D Cu(II) chain with an alternating triple-bridge of EO-azido, syn,syn-carboxylate, and μ2-ethanol. The title compound consists of ferromagnetically interacting ferromagnetic chains, which exhibit ferromagnetic order (T(c) = 7.0 K). The strong ferromagnetic coupling between adjacent Cu(II) ions within each chain is due to the countercomplementarity of the super-exchange pathways, whereas the ferromagnetic interchain interactions--responsible for the long-range magnetic ordering--are most likely due to the presence of coordinated ethanol molecules establishing hydrogen bonds with neighboring chains. DFT calculations have been performed on compound 1 to offer a qualitative theoretical explanation of the magnetic behavior.

Peculiar ferromagnetic insulator state in the low-hole-doped manganites

International Nuclear Information System (INIS)

Algarabel, P.A.; Teresa, J.M. de; Blasco, J.; Ibarra, M.R.; Kapusta, Cz.; Sikora, M.; Zajac, D.; Riedi, P.C.; Ritter, C.

2003-01-01

In this work we show the very different nature of the ferromagnetic state of the low-hole-doped manganites with respect to other manganites showing colossal magnetoresistance. High-field measurements definitively prove the coexistence of ferromagnetic-metallic and ferromagnetic-insulating regions even when the sample is magnetically saturated, with the ground state being inhomogeneous. We have investigated La 0.9 Ca 0.1 MnO 3 as a prototype compound. A wide characterization by means of magnetic and magnetotransport measurements, neutron diffraction, small-angle neutron scattering, and nuclear magnetic resonance has allowed us to establish that the ground state is based on the existence of disordered nanometric double-exchange metallic clusters that coexist with long-range superexchange-based ferromagnetic insulating regions. Under high magnetic field the system reaches magnetization saturation by aligning the magnetic clusters and the insulating matrix, but even if they grow in size, they do not reach the percolation limit

Nonlinear nuclear magnetic resonance in ferromagnets

International Nuclear Information System (INIS)

Nurgaliev, T.

1988-01-01

The properties of nonlinear nuclear magnetic resonance (NMR) have been studied theoretically by taking into account the interaction between NMR and FMR in the ferromagnets. The Landau-Lifshitz-Bloch equations, describing the electron and nuclear magnetization behaviour in ferromagnets are presented in an integral form for a weakly excited electronic system. The stationary solution of these equations has been analysed in the case of equal NMR and FMR frequencies: the criteria for the appearance of two stable dynamic states is found and the high-frequency magnetic susceptibility for these systems is investigated. 2 figs., 8 refs

Comparison of sup(99m)Tc-MDP to sup(99m)Tc-pertechnetate by computerized quantitative joint scintigraphy

International Nuclear Information System (INIS)

Rekonen, A.; Moettoenen, T.; Oka, M.

1982-01-01

99mTc-pertechnetate was compared to 99mTc-MDP in joint pairs with asymmetric arthritis. Markedly elevated joint activity ratios (inflamed/uninflamed joint) were measured in all the joint pairs studied. In the joints affected by reactive arthritis and without roentgenologic changes the mean joint activity was the same with both tracers. A very high activity ratio with 99mTc-MDP was found in septic arthritis. In rheumatoid arthritis the sensitivity of 99mTc-MDP as an indicator of active arthritis seemed to be better than that of 99mTc-pertechnetate. Even in joints without erosions in roentgenograms the joint activity ratios were markedly elevated with 99mTc-MDP. This suggests, that high activity in 99mTc-MDP scanning might be prognostic of erosive joint changes. In this work a profile curve was used for quantitation differences between joints

High Tc screen-printed YBa2Cu3O(7-x) films - Effect of the substrate material

Science.gov (United States)

Bansal, Narottam P.; Simons, Rainee N.; Farrell, D. E.

1988-08-01

Thick films of YBa2Cu3O(7-x) have been deposited on highly polished alumina, magnesia spinel, nickel aluminum titanate (Ni-Al-Ti), and barium tetratitanate (Ba-Ti) substrates by the screen printing technique. Properties of the films were found to be highly sensitive to the choice of the substrate material. The film on Ba-Ti turned green after firing, due to a reaction with the substrate and were insulating. A film on Ni-Al-Ti had a Tc (onset) of about 95 K and lost 90 percent of its resistance by about 75 K. However, even at 4 K it was not fully superconducting, possibly due to a reaction between the film and the substrate and interdiffusion of the reaction products. The film on alumina had Tc (onset) of about 96 K, Tc (zero) of about 66 K, and Delta Tc of about 10 K. The best film was obtained on spinel and had Tc (onset) of about 94 K, zero resistance at 81 K, and a transition width of about 7 K.

99mTc-MIBI, 99mTc-tetrofosmin and 99mTc-Q12 in vitro and in vivo

International Nuclear Information System (INIS)

Bernard, Bert F.; Krenning, Eric P.; Breeman, Wout A. P.; Ensing, Geert; Benjamins, Harry; Bakker, Willem H.; Visser, Theo J.; Jong, Marion de

1998-01-01

The aim of this study was to compare uptake of 99m Tc-MIBI, 99m Tc-tetrofosmin and 99m Tc-Q12 in vitro and biodistribution in vivo in rats. In vitro, uptake decreased in the order MIBI→tetrofosmin→Q12. Uptake of MIBI and tetrofosmin, but not of Q12, in cultured tumor cells was dependent on the plasma membrane and mitochondrial potential. In vivo, heart uptake of all three compounds was high and stable. Tumor uptake decreased in the order MIBI→Q12→tetrofosmin and the tumor/blood ratio in the order MIBI→tetrofosmin→Q12

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Solubility of Tc(IV) oxides

International Nuclear Information System (INIS)

Liu, D.J.; Fan, X.H.

2005-01-01

Full text of publication follows: The deep geological disposal of the high level radioactive wastes is expected to be a safer disposal method in most countries. The long-lived fission product 99 Tc is present in large quantities in nuclear wastes and its chemical behavior in aqueous solution is of considerable interest. Under the reducing conditions, expected to exist in a deep geological repository, it is generally predicted that technetium will be present as TcO 2 .nH 2 O. The solubility of Tc(IV) is used as a source term in performance assessment of radioactive waste repository. Technetium oxide was prepared by reduction of a technetate solution with Sn 2+ . The solubility of Tc(IV) oxide has been determined in simulated groundwater and re-distilled water under aerobic and anaerobic conditions. The effects of pH and CO 3 2- concentration of solution on solubility of Tc(IV) oxide were studied. The concentration of total technetium and Tc(IV) species in the solutions were periodically determined by separating the oxidized and reduced technetium species using a solvent extraction procedure and counting the beta activity of the 99 Tc with a liquid scintillation counter. The experimental results show that the rate of oxidation of Tc(IV) in simulated groundwater and re-distilled water is about (1.49∼1.86) x 10 -9 mol/(L.d) under aerobic conditions, but Tc(IV) in simulated groundwater and re-distilled water is not oxidized under anaerobic conditions. Under aerobic or anaerobic conditions the solubility of Tc(IV) oxide in simulated groundwater and re-distilled water is equal on the whole after centrifugation or ultrafiltration. The solubility of Tc(IV) oxide decreases with the increase of pH at pH 10 and is pH independent in the range 2 -8 to 10 -9 mol/L at 2 3 2- concentration. These data could be used to estimate the Tc(IV) solubility for cases where solubility limits transport of technetium in reducing environments of high-level waste repositories. (authors)

Local moment formation and magnetic coupling of Mn dopants in Bi2Se3: A low-temperature ferromagnetic resonance study

Science.gov (United States)

Savchenko, D.; Tarasenko, R.; Vališka, M.; Kopeček, J.; Fekete, L.; Carva, K.; Holý, V.; Springholz, G.; Sechovský, V.; Honolka, J.

2018-05-01

We compare the magnetic and electronic configuration of single Mn atoms in molecular beam epitaxy (MBE) grown Bi2Se3 thin films, focusing on electron paramagnetic (ferromagnetic) resonance (EPR and FMR, respectively) and superconducting quantum interference device (SQUID) techniques. X-ray diffraction (XRD) and electron backscatter diffraction (EBSD) reveal the expected increase of disorder with increasing concentration of magnetic guest atoms, however, Kikuchi patterns show that disorder consists majorly of μm-scale 60° twin domains in the hexagonal Bi2Se3 structure, which are promoted by the presence of single unclustered Mn impurities. Ferromagnetism below TC (5.4±0.3) K can be well described by critical scaling laws M (T) (1 - T /TC) β with a critical exponent β = (0.34 ± 0.2) , suggesting 3D Heisenberg class magnetism instead of e.g. 2D-type coupling between Mn-spins in van der Waals gap sites. From EPR hyperfine structure data we determine a Mn2+ (d5, S = 5/2) electronic configuration with a g-factor of 2.002 for -1/2 → +1/2 transitions. In addition, from the strong dependence of the low temperature FMR fields and linewidth on the field strength and orientation with respect to the Bi2Se3 (0001) plane, we derive magnetic anisotropy energies of up to K1 = -3720 erg/cm3 in MBE-grown Mn-doped Bi2Se3, reflecting the first order magneto-crystalline anisotropy of an in-plane magnetic easy plane in a hexagonal (0001) crystal symmetry. We observe an increase of K1 with increasing Mn concentration, which we interpret to be correlated to a Mn-induced in-plane lattice contraction. Across the ferromagnetic-paramagnetic transition the FMR intensity is suppressed and resonance fields converge the paramagnetic limit of Mn2+ (d5, S = 5/2).

Itinerant ferromagnetism in the As 4p conduction band of Ba_{0.6}K_{0.4}Mn_{2}As_{2} identified by X-ray magnetic circular dichroism.

Science.gov (United States)

Ueland, B G; Pandey, Abhishek; Lee, Y; Sapkota, A; Choi, Y; Haskel, D; Rosenberg, R A; Lang, J C; Harmon, B N; Johnston, D C; Kreyssig, A; Goldman, A I

2015-05-29

X-ray magnetic circular dichroism (XMCD) measurements on single-crystal and powder samples of Ba_{0.6}K_{0.4}Mn_{2}As_{2} show that the ferromagnetism below T_{C}≈100  K arises in the As 4p conduction band. No XMCD signal is observed at the Mn x-ray absorption edges. Below T_{C}, however, a clear XMCD signal is found at the As K edge which increases with decreasing temperature. The XMCD signal is absent in data taken with the beam directed parallel to the crystallographic c axis indicating that the orbital magnetic moment lies in the basal plane of the tetragonal lattice. These results show that the previously reported itinerant ferromagnetism is associated with the As 4p conduction band and that distinct local-moment antiferromagnetism and itinerant ferromagnetism with perpendicular easy axes coexist in this compound at low temperature.

The NMR probe of high-Tc materials and correlated electron systems

CERN Document Server

Walstedt, Russell E

2018-01-01

This new edition updates readers in three areas of NMR studies, namely, recent developments in high-Tc materials, heavy fermion systems and actinide oxides are presented.  The NMR probe has yielded a vast array of data for solid state materials, corresponding to different compounds, ionic sites, and nuclear species, as well as to a wide variety of experimental conditions. The last two parts of the book are completely new in this edition, while the first part has seen major updates. This edition features the latest developments for high-Tc materials, especially the advances in the area of pseudogap studies are reviewed.  An in depth overview of heavy fermion systems is presented in the second part,  notably Kondo lattices, quantum critical points and unconventional superconductivity are areas of intense research recently and are covered extensively. Finally, valuable information from NMR studies with actinide oxides will be provided. Ongoing analysis and discussion of NMR data have resulted in a wealth o...

Phenomenological Theory for Pseudogap States in High Tc Cuprate

Directory of Open Access Journals (Sweden)

Zhang Fuchun

2012-03-01

Full Text Available Pseudogap phase in the underdoped region of high-Tc cuprate is one of the challenging issues in condensed matter physics. In this talk, I will describe a phenomenological theory for this phase, based on analogies to the approach to Mott localization at weak coupling in lower dimensional systems. I will make comparisons of the theory to a series of the experiments, including angle resolved photoemission spectroscope, scanning tunneling microscope.

The exponential critical state of high-Tc ceramics

International Nuclear Information System (INIS)

Castro, H.; Rinderer, L.

1994-01-01

The critical current in high-Tc materials is strongly reduced by a magnetic field. We studied this dependency for tubular YBCO samples. We find an exponential drop as the field is increased from zero up to some tens of oersted. This behavior was already observed by others, however little work has been done in this direction. We define what we call the ''exponential critical state'' of HTSC and compare the prediction for the magnetization with experimental data. Furthermore, the ''Kim critical state'' is obtained as the small field limit. (orig.)

Hole-induced d"0 ferromagnetism enhanced by Na-doping in GaN

International Nuclear Information System (INIS)

Zhang, Yong; Li, Feng

2017-01-01

The d"0 ferromagnetism in wurtzite GaN is investigated by the first-principle calculations. It is found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga vacancy and Na doping can introduce holes into GaN. However, Ga vacancy has a high formation energy, and is thus unlikely to occur in a significant concentration. In contrast, Na doping has relatively low formation energy. Under N-rich growth condition, Na doping with a sufficient concentration can be achieved, which can induce half-metallic ferromagnetism in GaN. Moreover, the estimated Curie temperature of Na-doped GaN is well above the room temperature. - Highlights: • Hole-induced ferromagnetism in GaN is confirmed. • Both Ga Vacancy and Na-doping can introduce hole into GaN. • The concentration of Ga vacancy is too low to induce detectable ferromagnetism. • Na-doped GaN is a possible ferromagnet with a high curie-temperature.

Investigation of ferromagnetic spinel semiconductors by hyperfine interactions of implanted nuclear probes

CERN Document Server

Samokhvalov, V; Dietrich, M; Schneider, F; Tiginyanu, I M; Tsurkan, V; Unterricker, S

2003-01-01

The semiconducting ferromagnetic spinel compounds CdCr//2Se //4, CdCr //2S//4, HgCr//2Se//4 and CuCr//2Se//4 (metallic) were investigated by the perturbed angular correlations (PAC) method with the radioactive probes **1**1**1In, **1**1**1**mCd, **1**1**1Ag, **1**1**7Cd, **1**9**9**mHg and **7**7Br. The probes were implanted at the ISOLDE on-line separator (CERN-Geneva) into single crystals. From the time dependence of the PAC spectra and the measured hyperfine interaction parameters: electric field gradient and magnetic hyperfine field, the probe positions and the thermal behavior of the probes could be determined. Cd, Ag and Hg are substituted at the A-site, In at the A- and B-site in the semiconducting compounds and Br at the anion position. Electric and magnetic hyperfine fields were used as test quantities for theoretical charge and spin density distributions of LAPW calculations (WIEN97).

Spin reorientation and magnetoelastic properties of ferromagnetic T b1 -xN dxC o2 systems with a morphotropic phase boundary

Science.gov (United States)

Murtaza, Adil; Yang, Sen; Chang, Tieyan; Ghani, Awais; Khan, Muhammad Tahir; Zhang, Rui; Zhou, Chao; Song, Xiaoping; Suchomel, Matthew; Ren, Yang

2018-03-01

The spin reorientation (SR) and magnetoelastic properties of pseudobinary ferromagnetic T b1 -xN dxC o2 (0 ≤x ≤1.0 ) systems involving a morphotropic phase boundary (MPB) were studied by high-resolution synchrotron x-ray diffraction (XRD), magnetization, and magnetostriction measurements. The easy magnetization direction of the Laves phase lies along the 〈111 〉 axis with x 0.65 below Curie temperature (TC). The temperature-dependent magnetization curves showed SR; this can be explained by a two-sublattice model. Based on the synchrotron (XRD) and magnetization measurements, the SR phase diagram for a MPB composition of T b0.35N d0.65C o2 was obtained. Contrary to previously reported ferromagnetic systems involving MPB, the MPB composition of T b0.35N d0.65C o2 exhibits a low saturation magnetization (MS), indicating a compensation of the Tb and Nd magnetic moments at MPB. The anisotropic magnetostriction (λS) first decreased until x =0.8 and then continuously increased in the negative direction with further increase of Nd concentration. The decrease in magnetostriction can be attributed to the decrease of spontaneous magnetostriction λ111 and increase of λ100 with opposite sign to λ111. This paper indicates an anomalous type of MPB in the ferromagnetic T b1 -xN dxC o2 system and provides an active way to design novel functional materials with exotic properties.

Electronic structures of ReS sub 2 , ReSe sub 2 and TcS sub 2 in the real and the hypothetical undistorted structures

CERN Document Server

Fang, C M; Haas, C; Groot, R A D

1997-01-01

The transition-metal dichalcogenides ReX sub 2 (X = S or Se) and TcS sub 2 with a d sup 3 electron configuration have distorted CdCl sub 2 and Cd(OH) sub 2 structures, respectively, with the Re(Tc) atoms in each layer forming parallelogram-shaped connected clusters (diamond chain). Ab-initio band-structure calculations were performed for ReX sub 2 and TcS sub 2 , and the hypothetical undistorted 1T-TcS sub 2 and 3R-ReX sub 2 structures. The calculations show that ReS sub 2 , ReSe sub 2 and TcS sub 2 are semiconductors with energy gaps of about 1.0 eV, 0.5 eV and 0.7 eV, respectively, while for the undistorted structures the Fermi level is in the partly filled band of d sub x sub sup 2 sub - sub y sub sup 2 and d sub x sub y orbitals of the t sub 2 sub g manifold. X-ray photoemission spectra for the core levels and valence band of ReSe sub 2 and ReS sub 2 are presented. The valence x-ray photoemission spectra showed that ReS sub 2 is a p-type semiconductor with an energy gap of about 1.5 eV, while ReSe sub 2 i...

Analysis of eddy current loss in high-Tc superconducting power cables with respect to various structure of stabilizer

International Nuclear Information System (INIS)

Choi, S. J.; Song, M. K.; Lee, S. J.; Cho, J. W.; Sim, K. D.

2005-01-01

The High-Tc superconducting power cable consists of a multi-layer high-Tc superconducting cable core and a stabilizer which is used to bypass the current at fault time. Eddy current loss is generated in the stabilizer in normal operating condition and affects the whole system. In this paper, the eddy current losses are analyzed with respect to various structure of stabilizer by using opera-3d. Moreover, optimal conditions of the stabilizer are derived to minimize the eddy current losses from the analyzed results. The obtained results could be applied to the design and manufacture of the high-Tc superconducting power cable system.

Orbitals, correlation, valencies in high-Tc superconductors

International Nuclear Information System (INIS)

Khomskii, D.I.

1990-09-01

The survey is given of certain properties of high-Tc superconductors connected with the details of their electronic structure such as the kind of orbitals involved and the degree of correlation. Special attention is paid to the properties of cuprates at high doping level. The problem whether there exists a ''Mott transition'' at high electron or a hole concentration is discussed. We also discuss physical factors (d-p Coulomb interaction, orbital mixing) leading to the partial occupation of copper d x 2 -orbital. In particular we show that in localized picture (x 2 -y 2 ) and z 2 -levels in La 2-x Sr x CuO 4 may cross at x approx. 0.4 which may be responsible for a marked change of many properties at this doping. The possible role of x 2 -electrons in pairing is discussed in connection with some recent experiments. (author). 28 refs, 6 figs, 1 tab

Pressure-induced weak ferromagnetism in uranium dioxide, UO2

International Nuclear Information System (INIS)

Sakai, H; Kato, H; Tokunaga, Y; Kambe, S; Walstedt, R E; Nakamura, A; Tateiwa, N; Kobayashi, T C

2003-01-01

The dc magnetization of insulating UO 2 under high pressure up to ∼1 GPa has been measured using a piston-cylinder cell. Pressure-induced weak ferromagnetism appeared at low pressure (∼0.2 GPa). Both the remanent magnetization and the coercive force increase as pressure increases. This weak ferromagnetism may come from spin canting or from uncompensated moments around grain boundaries

Modeling High Frequency Semiconductor Devices Using Maxwell's Equations

National Research Council Canada - National Science Library

El-Ghazaly, Samier

1999-01-01

.... In this research, we first replaced the conventional semiconductor device models, which are based on Poisson's Equation as a semiconductor model, with a new one that uses the full-wave electro...

Preparation of 99mTc-thiourea complex as a precursor for Tc(III) labeled compounds

International Nuclear Information System (INIS)

Rey, A.; Teran, M.; Molina, S.; Leon, A.; Kremer, C.; Gambino, D.; Kremer, E.

1996-01-01

Ligand exchange is one of the possible synthetic routes to obtain 99m Tc coordination compounds. However, the success of this route depends on the availability of good precursors. The objective of this work is the preparation of the complex [ 99m Tc (tu) 6 ] 3+ (tu = thiourea), as a potential precursor for 99m Tc(III) coordination compounds. The preparation was successfully performed in acidic conditions, the excess of tu serving as reducing agent. At pH values higher than 3, the compound becomes unstable and on addition of polydentate ligands new Tc(III) complexes are formed. With edta, the complex 99m Tc(III)-edta was obtained in high yield. (author). 13 refs., 3 tabs

Strongly suppressed proximity effect and ferromagnetism in topological insulator/ferromagnet/superconductor thin film trilayers of Bi2Se3/SrRuO3/underdoped YBa2Cu3O x : a possible new platform for Majorana nano-electronics

Science.gov (United States)

Koren, Gad

2018-07-01

We report properties of a topological insulator–ferromagnet–superconductor trilayers comprised of thin films of 20 nm thick {Bi}}2{Se}}3 on 10 nm SrRuO3 on 30 nm {YBa}}2{Cu}}3{{{O}}}x. As deposited trilayers are underdoped and have a superconductive transition with {{T}}{{c}} onset at 75 K, zero resistance at 65 K, {{T}}Cueri} at 150 K and {{T}}* of about 200 K. Further reannealing under vacuum yields the 60 K phase of {YBa}}2{Cu}}3{{{O}}}x which still has zero resistance below about 40 K. Only when 10 × 100 microbridges were patterned in the trilayer, some of the bridges showed resistive behavior all the way down to low temperatures. Magnetoresistance versus temperature of the superconductive ones showed the typical peak due to flux flow against pinning below {{T}}{{c}}, while the resistive ones showed only the broad leading edge of such a peak. All this indicates clearly weak-link superconductivity in the resistive bridges between superconductive {YBa}}2{Cu}}3{{{O}}}x grains via the topological and ferromagnetic cap layers. Comparing our results to those of a reference trilayer (RTL) with the topological {Bi}}2{Se}}3 layer substituted by a non-superconducting highly overdoped {La}}1.65{Sr}}0.35{CuO}}4, indicates that the superconductive proximity effect as well as ferromagnetism in the topological trilayer are actually strongly suppressed compared to the non-topological RTL. This strong suppression could originate in lattice and Fermi levels mismatch as well as in short coherence length and unfavorable effects of strong spin–orbit coupling in {Bi}}2{Se}}3 on the d-wave pairing of {YBa}}2{Cu}}3{{{O}}}x. Proximity induced edge currents in the SRO/YBCO layer could lead to Majorana bound states, a possible signature of which is observed in the present study as zero bias conductance peaks.

Jahn-Teller effect and ferromagnetic ordering in La0.875Sr0.125MnO3: A reentrant behaviour

International Nuclear Information System (INIS)

Pinsard, L.; Revcolevschi, A.; Anane, A.; Dupas, C.

1997-01-01

The compound La 0.875 Sr 0.125 MnO 3 undergoes a series of structural phase transitions in which different physical effects are involved. The compound is rhombohedral above T RO ∝400 K. On cooling, a phase transition to an orthorhombic Pbnm O-phase takes place at T RO , no significant orbital ordering is observed. At T OO' ∝270 K a structural phase transition to another orthorhombic (O') form takes place, and an orbital ordering appears due to a cooperative JT effect. For this temperature range the compound is a paramagnetic semiconductor. Upon cooling it becomes ferromagnetic at T C ∝180 K and the orbital ordering is partially suppressed. Below a temperature T O'O '' ∝150 K at which the average Mn magnetic moment is about 2μ B the orbital ordering is completely suppressed by a first order structural transition to another orthorhombic phase (O '' ) similar to the O-phase. Between T C and T O'O '' the compound is metallic and becomes a ferromagnetic insulator below T O'O '' where a canting of the ferromagnetic order appears. (orig.)

Exchange bias in nearly perpendicularly coupled ferromagnetic/ferromagnetic system

International Nuclear Information System (INIS)

Bu, K.M.; Kwon, H.Y.; Oh, S.W.; Won, C.

2012-01-01

Exchange bias phenomena appear not only in ferromagnetic/antiferromagnetic systems but also in ferromagnetic/ferromagnetic systems in which two layers are nearly perpendicularly coupled. We investigated the origin of the symmetry-breaking mechanism and the relationship between the exchange bias and the system's energy parameters. We compared the results of computational Monte Carlo simulations with those of theoretical model calculation. We found that the exchange bias exhibited nonlinear behaviors, including sign reversal and singularities. These complicated behaviors were caused by two distinct magnetization processes depending on the interlayer coupling strength. The exchange bias reached a maximum at the transition between the two magnetization processes. - Highlights: ► Exchange bias phenomena are found in perpendicularly coupled F/F systems. ► Exchange bias exhibits nonlinear behaviors, including sign reversal and singularities. ► These complicated behaviors were caused by two distinct magnetization processes. ► Exchange bias reached a maximum at the transition between the two magnetization processes. ► We established an equation to maximize the exchange bias in perpendicularly coupled F/F system.

Vertical distributions of (99)Tc and the (99)Tc/(137)Cs activity ratio in the coastal water off Aomori, Japan.

Science.gov (United States)

Nakanishi, Takahiro; Zheng, Jian; Aono, Tatsuo; Yamada, Masatoshi; Kusakabe, Masashi

2011-08-01

Using a sector-field ICP-MS the vertical distributions of the (99)Tc concentration and (99)Tc/(137)Cs activity ratio were measured in the coastal waters off Aomori Prefecture, Japan, where a spent-nuclear-fuel reprocessing plant has begun test operation. The (99)Tc concentrations in surface water ranged from 1.8 to 2.4 mBq/m(3), no greater than the estimated background level. Relatively high (99)Tc/(137)Cs activity ratios (10-12 × 10(-4)) would be caused by the inflow of the high-(99)Tc/(137)Cs water mass from the Japan Sea. There is no observable contamination from the reprocessing plant in the investigated area. The (99)Tc concentration and the (99)Tc/(137)Cs activity ratio in water column showed gradual decreases with depth. Our results implied that (99)Tc behaves in a more conservative manner than (137)Cs in marine environments. Copyright © 2011 Elsevier Ltd. All rights reserved.

Coexistence of weak ferromagnetism and ferroelectricity in the high pressure LiNbO3-type phase of FeTiO3.

Science.gov (United States)

Varga, T; Kumar, A; Vlahos, E; Denev, S; Park, M; Hong, S; Sanehira, T; Wang, Y; Fennie, C J; Streiffer, S K; Ke, X; Schiffer, P; Gopalan, V; Mitchell, J F

2009-07-24

We report the magnetic and electrical characteristics of polycrystalline FeTiO_{3} synthesized at high pressure that is isostructural with acentric LiNbO_{3} (LBO). Piezoresponse force microscopy, optical second harmonic generation, and magnetometry demonstrate ferroelectricity at and below room temperature and weak ferromagnetism below approximately 120 K. These results validate symmetry-based criteria and first-principles calculations of the coexistence of ferroelectricity and weak ferromagnetism in a series of transition metal titanates crystallizing in the LBO structure.

Electromagnetic wave absorption in high-Tc superconductors and its application

International Nuclear Information System (INIS)

Porjesz, T.; Khatiashvili, N.; Kovacs, Gy.; Leppavuori, S.; Uusimaki, A.; Kokkomaki, T.; Hagberg, J.

1995-08-01

The experimental study of the electromagnetic wave absorption of high-Tc superconductors subjected to small magnetic fields has been extended to a wide frequency range. The results obtained show an almost frequency independent behaviour in the 4 MHz - 20 GHz region. The measurement technique for the high frequency regime was developed in such a way that the sensitivity increased so much that the sample under investigation could be used as a very sensitive magnetic field detector, too. (author). 4 refs, 8 figs, 1 tab

Spin-transport-phenomena in metals, semiconductors, and insulators

Energy Technology Data Exchange (ETDEWEB)

Althammer, Matthias Klaus

2012-07-19

Assuming that one could deterministically inject, transport, manipulate, store and detect spin information in solid state devices, the well-established concepts of charge-based electronics could be transferred to the spin realm. This thesis explores the injection, transport, manipulation and storage of spin information in metallic conductors, semiconductors, as well as electrical insulators. On the one hand, we explore the spin-dependent properties of semiconducting zinc oxide thin films deposited via laser-molecular beam epitaxy (laser-MBE). After demonstrating that the zinc oxide films fabricated during this thesis have excellent structural, electrical, and optical properties, we investigate the spin-related properties by optical pump/probe, electrical injection/optical detection, and all electrical spin valve-based experiments. The two key results from these experiments are: (i) Long-lived spin states with spin dephasing times of 10 ns at 10 K related to donor bound excitons can be optically addressed. (ii) The spin dephasing times relevant for electrical transport-based experiments are {<=} 2 ns at 10 K and are correlated with structural quality. On the other hand we focus on two topics of current scientific interest: the comparison of the magnetoresistance to the magnetothermopower of conducting ferromagnets, and the investigation of pure spin currents generated in ferromagnetic insulator/normal metal hybrid structures. We investigate the magnetoresistance and magnetothermopower of gallium manganese arsenide and Heusler thin films as a function of external magnetic field orientation. Using a series expansion of the resistivity and Seebeck tensors and the inherent symmetry of the sample's crystal structure, we show that a full quantitative extraction of the transport tensors from such experiments is possible. Regarding the spin currents in ferromagnetic insulator/normal metal hybrid structures we studied the spin mixing conductance in yttrium iron garnet

Transport and quantum interference in ferromagnetic (Ga,Mn)As nanostructures; Transportuntersuchungen von Quanteninterferenzeffekten in ferromagnetischen (Ga,Mn)As Nanostrukturen

Energy Technology Data Exchange (ETDEWEB)

Wagner, Konrad

2007-09-15

In the framework of the thesis presented here for the first time quantum interference effects in ferromagnetic semiconductors could be uniquely detected. For this wire and ring structures with line widths of few nanometers were fabricated and universal conductivity fluctuations and Aharonov-Bohm oscillations at very low temperatures (<20 mK) were studied. From the analysis of the temperature and length dependence of the fluctuations knowledge about the coherence length and the scattering processes connected with this could be obtained.

The half-metallic ferromagnetism character in Be{sub 1−x}V{sub x}Y (Y=Se and Te) alloys: An ab-initio study

Energy Technology Data Exchange (ETDEWEB)

Sajjad, M. [School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Manzoor, Sadia [Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore (Pakistan); Zhang, H.X. [School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Beijing Key Laboratory of Work Safety Intelligent Monitoring, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Noor, N.A. [Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore (Pakistan); Alay-e-Abbas, S.M. [Department of Physics, GC University Faisalabad, Allama Iqbal Road, Faisalabad 38000 (Pakistan); Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan); Shaukat, A. [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara 29000 (Algeria)

2015-04-01

Ab-initio calculations for V-doped BeSe and BeTe semiconductors are performed by means of all-electrons full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. The structural properties are optimized using the Wu-Cohen generalized gradient approximation functional, whereas modified Becke and Jhonson local density approximation functional has been employed for evaluating the spin-polarized electronic and magnetic properties. Magnetic stability at various doping concentrations in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering is investigated by comparing the minimum total energies and enthalpies of formation (ΔH). Studied band structures, density of states, total energy, exchange interactions and magnetic moments manifest both alloys with half-metallic ferromagnetic behavior. Moreover, their valance bands are found to be paired ferromagnetically with V atoms. Furthermore, it was observed that the magnetic moment of vanadium atom reduces from free space charge value due to p–d hybridization which yields small magnetic moments on the Be, Se and Te sites. - Highlights: • Density functional calculations for V-doped BeSe and BeTe are performed. • V-doped BeSe and BeTe are found to be stable half-metallic ferromagnetism. • Improved electronic properties are achieved using mBJLDA which confirm HMF. • The half-metallic gaps show non-linear variation with increasing dopant concentration.

Comparison of carrier-added [99mTc] EDTMP and carrier-free preparations of [99mTc] EDTMP and [99mTc] DPD

International Nuclear Information System (INIS)

Krcal, A.; Kletter, K.; Dudczak, R.; Pirich, C.; Mitterhauser, M.

2002-01-01

Full text: High uptake of bone-seeking radiopharmaceuticals in malignant bone lesions is a prerequisite for adequate bone scanning. Visual image analysis is impaired due to high soft-tissue activity with currently available [ 99m Tc]-EDTMP-kits. This study aimed to compare carrier-added [ 99m Tc]-EDTMP with carrier-free [ 99m Tc]-EDTMP and [ 99m Tc]-DPD preparations in clinical routine. 15 μg and 150 μg perrhenic acid respectively were added to [ 99m Tc]-pertechnetate (>6 GBq in 3 ml phys. saline). The solution was then transferred into a vial, containing 1 mg of EDTMP, 3.6 mg stannous(II)chloride and 10 mg ascorbic acid under inert conditions. Under vigorous stirring the reaction mixture was heated to 45 o C for 10 min. After cooling down to room temperature the labelling mixture was sterile filtrated (millipore 0.22 μm). Quality control was performed using radio-ITLC (Whatman SG; acetone or ethanol: R f perrhenate/pertechnetate 0.87, colloid/product 0.05; phys. saline: R f colloid 0.00, perrhenate/pertechnetate and product 0.9) allowing rapid and efficient assessment of the product. Carrier free [ 99m Tc]-EDTMP and [ 99m Tc]-DPD were prepared according to instructions of the manufacturer. Clinical studies were performed in 29 patients according to a routine bone scanning protocol by injecting 700-800 MBq of the respective tracer and whole body imaging 3 h thereafter. Radiochemical purity and radiochemical yield relied on various parameters such as concentration of carrier and reducing agent and reaction conditions (pH, reaction time, temperature). Means of the labelling yield were 22 % for the preparation using 150 μg of carrier (5 preparations), 80 % for the preparation using 15 μpg of carrier (10 preparations) and 91 % for the carrier free products (5 preparations). Radiochemical purity was >96 % in all experiments. Colloid was formed in very low amounts, and was completely removed by sterile filtration. In clinical studies quantitative analysis

Paramagnetic resonance and electronic conduction in organic semiconductors

International Nuclear Information System (INIS)

Nechtschein, M.

1963-01-01

As some organic bodies simultaneously display semi-conducting properties and a paramagnetism, this report addresses the study of conduction in organic bodies. The author first briefly recalls how relationships between conductibility and Electron Paramagnetic Resonance (EPR) can be noticed in a specific case (mineral and metallic semiconductors). He discusses published results related to paramagnetism and conductibility in organic bodies. He reviews various categories of organic bodies in which both properties are simultaneously present. He notably addresses radical molecular crystals, non-radical molecular crystals, charge transfer complexes, pyrolyzed coals, and pseudo-ferromagnetic organic structures. He discusses the issue of relationships between conduction (charge transfer by electrons) and ERP (which reveals the existence of non-paired electrons which provide free spins)

Growth of high purity semiconductor epitaxial layers by liquid phase ...

Indian Academy of Sciences (India)

Unknown

semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such ... reference to the growth of GaAs layers. The technique of growing very high purity layers ... the inner walls of the gas lines and (e) the containers for storing, handling and cleaning of the mate-.

Exploring semiconductor quantum dots and wires by high resolution electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Molina, S I [Departamento de Ciencia de los Materiales e Ing Metalurgica y Q. Inorganica, F. de Ciencias, Universidad de Cadiz, Campus Rio San Pedro. 11510 Puerto Real (Cadiz) (Spain); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro. 11510 Puerto Real (Cadiz) (Spain); Gonzalez, L; Ripalda, J M [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Varela, M; Pennycook, S J, E-mail: sergio.molina@uca.e [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge TN 37831 (United States)

2010-02-01

We review in this communication our contribution to the structural characterisation of semiconductor quantum dots and wires by high resolution electron microscopy, both in phase-contrast and Z-contrast modes. We show how these techniques contribute to predict the preferential sites of nucleation of these nanostructures, and also determine the compositional distribution in 1D and 0D nanostructures. The results presented here were produced in the framework of the European Network of Excellence entitled {sup S}elf-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE){sup .}

99mTc(CO)3-DTMA bombesin conjugates having high affinity for the GRP receptor

International Nuclear Information System (INIS)

Lane, Stephanie R.; Veerendra, Bhadrasetty; Rold, Tammy L.; Sieckman, Gary L.; Hoffman, Timothy J.; Jurisson, Silvia S.; Smith, Charles J.

2008-01-01

Introduction: Targeted diagnosis of specific human cancer types continues to be of significant interest in nuclear medicine. 99m Tc is ideally suited as a diagnostic radiometal for in vivo tumor targeting due to its ideal physical characteristics and diverse labeling chemistries in numerous oxidation states. Methods: In this study, we report a synthetic approach toward design of a new tridentate amine ligand for the organometallic aqua-ion [ 99m Tc(H 2 O) 3 (CO) 3 ] + . The new chelating ligand framework, 2-(N,N'-Bis(tert-butoxycarbonyl)diethylenetriamine) acetic acid (DTMA), was synthesized from a diethylenetriamine precursor and fully characterized by mass spectrometry and nuclear magnetic resonance spectroscopy ( 1 H and 13 C). DTMA was conjugated to H 2 N-(X)-BBN(7-14)NH 2 , where X=an amino acid or aliphatic pharmacokinetic modifier and BBN=bombesin peptide, by means of solid phase peptide synthesis. DTMA-(X)-BBN(7-14)NH 2 conjugates were purified by reversed-phase high-performance chromatography and characterized by electrospray-ionization mass spectrometry. Results: The new conjugates were radiolabeled with [ 99m Tc(H 2 O) 3 (CO) 3 ] + produced via Isolink radiolabeling kits to produce [ 99m Tc(CO) 3 -DTMA-(X)-BBN(7-14)NH 2 ]. Radiolabeled conjugates were purified by reversed-phase high-performance chromatography. Effective receptor binding behavior was evaluated in vitro and in vivo. Conclusions: [ 99m Tc(CO) 3 -DTMA-(X)-BBN(7-14)NH 2 ] conjugates displayed very high affinity for the gastrin releasing peptide receptor in vitro and in vivo. Therefore, these conjugates hold some propensity to be investigated as molecular imaging agents that specifically target human cancers uniquely expressing the gastrin releasing peptide receptor subtypes

Highly Enhanced Many-Body Interactions in Anisotropic 2D Semiconductors.

Science.gov (United States)

Sharma, Ankur; Yan, Han; Zhang, Linglong; Sun, Xueqian; Liu, Boqing; Lu, Yuerui

2018-05-15

Atomically thin two-dimensional (2D) semiconductors have presented a plethora of opportunities for future optoelectronic devices and photonics applications, made possible by the strong light matter interactions at the 2D quantum limit. Many body interactions between fundamental particles in 2D semiconductors are strongly enhanced compared with those in bulk semiconductors because of the reduced dimensionality and, thus, reduced dielectric screening. These enhanced many body interactions lead to the formation of robust quasi-particles, such as excitons, trions, and biexcitons, which are extremely important for the optoelectronics device applications of 2D semiconductors, such as light emitting diodes, lasers, and optical modulators, etc. Recently, the emerging anisotropic 2D semiconductors, such as black phosphorus (termed as phosphorene) and phosphorene-like 2D materials, such as ReSe 2 , 2D-perovskites, SnS, etc., show strong anisotropic optical and electrical properties, which are different from conventional isotropic 2D semiconductors, such as transition metal dichalcogenide (TMD) monolayers. This anisotropy leads to the formation of quasi-one-dimensional (quasi-1D) excitons and trions in a 2D system, which results in even stronger many body interactions in anisotropic 2D materials, arising from the further reduced dimensionality of the quasi-particles and thus reduced dielectric screening. Many body interactions have been heavily investigated in TMD monolayers in past years, but not in anisotropic 2D materials yet. The quasi-particles in anisotropic 2D materials have fractional dimensionality which makes them perfect candidates to serve as a platform to study fundamental particle interactions in fractional dimensional space. In this Account, we present our recent progress related to 2D phosphorene, a 2D system with quasi-1D excitons and trions. Phosphorene, because of its unique anisotropic properties, provides a unique 2D platform for investigating the

Temperature limited heater utilizing non-ferromagnetic conductor

Science.gov (United States)

Vinegar,; Harold J. , Harris; Kelvin, Christopher [Houston, TX

2012-07-17

A heater is described. The heater includes a ferromagnetic conductor and an electrical conductor electrically coupled to the ferromagnetic conductor. The ferromagnetic conductor is positioned relative to the electrical conductor such that an electromagnetic field produced by time-varying current flow in the ferromagnetic conductor confines a majority of the flow of the electrical current to the electrical conductor at temperatures below or near a selected temperature.

Strain-Induced Ferromagnetism in Antiferromagnetic LuMnO3 Thin Films

Science.gov (United States)

White, J. S.; Bator, M.; Hu, Y.; Luetkens, H.; Stahn, J.; Capelli, S.; Das, S.; Döbeli, M.; Lippert, Th.; Malik, V. K.; Martynczuk, J.; Wokaun, A.; Kenzelmann, M.; Niedermayer, Ch.; Schneider, C. W.

2013-07-01

Single phase and strained LuMnO3 thin films are discovered to display coexisting ferromagnetic and antiferromagnetic orders. A large moment ferromagnetism (≈1μB), which is absent in bulk samples, is shown to display a magnetic moment distribution that is peaked at the highly strained substrate-film interface. We further show that the strain-induced ferromagnetism and the antiferromagnetic order are coupled via an exchange field, therefore demonstrating strained rare-earth manganite thin films as promising candidate systems for new multifunctional devices.

Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

International Nuclear Information System (INIS)

Yalishev, V.Sh.

2006-02-01

Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure

Science.gov (United States)

Korenev, V. L.; Salewski, M.; Akimov, I. A.; Sapega, V. F.; Langer, L.; Kalitukha, I. V.; Debus, J.; Dzhioev, R. I.; Yakovlev, D. R.; Müller, D.; Schröder, C.; Hövel, H.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Kusrayev, Yu. G.; Bayer, M.

2016-01-01

Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wavefunction overlap and is therefore short-ranged, so that it may be compromised across the hybrid interface. Here we study a hybrid structure consisting of a ferromagnetic Co layer and a semiconducting CdTe quantum well, separated by a thin (Cd, Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wavefunction overlap of quantum well holes and magnetic atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 30 nm. We suggest that the resulting spin polarization of acceptor-bound holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.

Proposal of Magnetic Circuit using Magnetic Shielding with Bulk-Type High Tc Superconductors

Science.gov (United States)

Fukuoka, Katsuhiro; Hashimoto, Mitsuo; Tomita, Masaru; Murakami, Masato

Recently, bulk-type high Tc superconductors having a characteristic of critical current density over 104 A/cm2 in liquid nitrogen temperature (77K) on 1T, can be produced. They are promising for many practical applications such as a magnetic bearing, a magnetic levitation, a flywheel, a magnetic shielding and others. In this research, we propose a magnetic circuit that is able to use for the magnetic shield of plural superconductors as an application of bulk-type high Tc superconductors. It is a closed magnetic circuit by means of a toroidal core. Characteristics of the magnetic circuit surrounded with superconductors are evaluated and the possibility is examined. As the magnetic circuit of the ferrite core is surrounded with superconductors, the magnetic flux is shielded even if it leaked from the ferrite core.

Models of high-Tc superconductivity and applications to electric generators and motors

DEFF Research Database (Denmark)

Sørensen, Mads Peter

We present the Ginzburg Landau model for mesoscopic high-Tc superconductors of complex geometry. It is shown that giant vortices can form at boundary defects. The relation between total magnetic flux penetration through the superconductor and the externally applied field is established. This is i...

Internal friction of flux motion in Hg-system high-Tc superconductors

International Nuclear Information System (INIS)

Tian, W.; Zhu, J.S.; Shao, H.M.; Li, J.; Wang, Y.N.

1996-01-01

The internal friction(IF) and modulus as functions of temperature were measured for several Hg-system high-Tc superconductors(Hg1201, Hg1223, Hg1223 doped with Fe and Pb), under the applied magnetic field, with vibrating reed technique. An IF peak associated with flux motion can be found below Tc for all samples. The temperature of the IF peak increases with reducing vibrating amplitude. This amplitude dependence of IF indicates that the flux motion is characterized by nonlinear behavior. No apparent shift of IF peak position can be detected by varying the frequency in the range from 10 2 Hz to 10 3 Hz. Furthermore, the IF peak height satisfies a scaling law Q -1 ∝ω -n . This may be originated from phase transition of flux line lattice(FLL) rather than a thermally activated diffusion process. (orig.)

Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

International Nuclear Information System (INIS)

Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

2003-01-01

We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

Giant magnetotransmission and magnetoreflection in ferromagnetic materials

International Nuclear Information System (INIS)

Telegin, A.V.; Sukhorukov, Yu.P.; Loshkareva, N.N.; Mostovshchikova, E.V.; Bebenin, N.G.; Gan'shina, E.A.; Granovsky, A.B.

2015-01-01

We present a brief review on magnetotransmission (magnetoabsorption) and magnetoreflection of natural (unpolarized) light in ferromagnetic chromium chalcogenide spinel, manganites with perovskite structure and thin-film metallic nanostructures in the middle infrared spectral range. The magnetooptical effects under discussion are of high interest for numerous and promising applications in the infrared optoelectronics. - Highlights: • Magnetotransmission and magnetoreflection of light in ferromagnetic are presented. • The effects are greater than common magnetooptical phenomena in the infrared. • The effects may have a different origin depending on a material or spectral range. • Possible applications of the magnetotransmission and magnetoreflection are discussed

Giant magnetotransmission and magnetoreflection in ferromagnetic materials

Energy Technology Data Exchange (ETDEWEB)

Telegin, A.V., E-mail: telegin@imp.uran.ru [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620137 Yekaterinburg (Russian Federation); Sukhorukov, Yu.P.; Loshkareva, N.N.; Mostovshchikova, E.V.; Bebenin, N.G. [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620137 Yekaterinburg (Russian Federation); Gan' shina, E.A.; Granovsky, A.B. [Moscow State University, 119991 Moscow (Russian Federation)

2015-06-01

We present a brief review on magnetotransmission (magnetoabsorption) and magnetoreflection of natural (unpolarized) light in ferromagnetic chromium chalcogenide spinel, manganites with perovskite structure and thin-film metallic nanostructures in the middle infrared spectral range. The magnetooptical effects under discussion are of high interest for numerous and promising applications in the infrared optoelectronics. - Highlights: • Magnetotransmission and magnetoreflection of light in ferromagnetic are presented. • The effects are greater than common magnetooptical phenomena in the infrared. • The effects may have a different origin depending on a material or spectral range. • Possible applications of the magnetotransmission and magnetoreflection are discussed.

The Physics of Ferromagnetism

CERN Document Server

Miyazaki, Terunobu

2012-01-01

This book covers both basic physics of ferromagnetism such as magnetic moment, exchange coupling, magnetic anisotropy and recent progress in advanced ferromagnetic materials. Special interests are focused on NdFeB permanent magnets and the materials studied in the field of spintronics. In the latter, development of tunnel magnetoresistance effect through so called giant magnetoresistance effect is explained.

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Isomeric and high-spin states of 94Tc and the search for yrast isomers near Napprox.50

International Nuclear Information System (INIS)

Lee, I.Y.; Johnson, N.R.; McGowan, F.K.; Young, G.R.; Guidry, M.W.; Yates, S.W.

1981-01-01

A search for isomers in the Napprox.50 region has produced no evidence of high-spin yrast isomerism. A new 4.5-ns low-multiplicity isomer has been identified and assigned to 94 Tc, while the yrast sequence of 94 Tc has been established to more than 5 MeV in excitation energy

Nonlinear thermoelectric effects in high-field superconductor-ferromagnet tunnel junctions

Directory of Open Access Journals (Sweden)

Stefan Kolenda

2016-11-01

Full Text Available Background: Thermoelectric effects result from the coupling of charge and heat transport and can be used for thermometry, cooling and harvesting of thermal energy. The microscopic origin of thermoelectric effects is a broken electron–hole symmetry, which is usually quite small in metal structures. In addition, thermoelectric effects decrease towards low temperatures, which usually makes them vanishingly small in metal nanostructures in the sub-Kelvin regime.Results: We report on a combined experimental and theoretical investigation of thermoelectric effects in superconductor/ferromagnet hybrid structures. We investigate the dependence of thermoelectric currents on the thermal excitation, as well as on the presence of a dc bias voltage across the junction.Conclusion: Large thermoelectric effects are observed in superconductor/ferromagnet and superconductor/normal-metal hybrid structures. The spin-independent signals observed under finite voltage bias are shown to be reciprocal to the physics of superconductor/normal-metal microrefrigerators. The spin-dependent thermoelectric signals in the linear regime are due to the coupling of spin and heat transport, and can be used to design more efficient refrigerators.

International Discussion Meeting on High-Tc Superconductors

CERN Document Server

1988-01-01

In the past two years conferences on superconductivity have been characterized by the attendance of hundreds of scientists. Consequently, the organizers were forced to schedule numerous parallel sessions and poster presentations with an almost unsurveyable amount of information. It was, therefore, felt that a more informal get-together, providing ample time for a thourough discussion of some topics of current interest in high-temperature superconductivity, was timely and benefitial for leading scientists as well as for newcomers in the field. The present volume contains the majority of papers presented at the International Discussion Meeting on High-Tc Superconductors held at the Mauterndorf Castle in the Austrian Alps from February 7 to 11, 1988. Each subject was introduced in review form by a few invited speakers and then discussed together with the contributed poster presentations. These discussion sessions chaired by selected scientists turned out to be the highlights of the meeting, not only because all ...

Josephson junction between two high Tc superconductors with arbitrary transparency of interface

Directory of Open Access Journals (Sweden)

GhR Rashedi

2010-03-01

Full Text Available In this paper, a dc Josephson junction between two singlet superconductors (d-wave and s-wave with arbitrary reflection coefficient has been investigated theoretically. For the case of high Tc superconductors, the c-axes are parallel to an interface with finite transparency and their ab-planes have a mis-orientation. The physics of potential barrier will be demonstrated by a transparency coefficient via which the tunneling will occur. We have solved the nonlocal Eilenberger equations and obtained the corresponding and suitable Green functions analytically. Then, using the obtained Green functions, the current-phase diagrams have been calculated. The effect of the potential barrier and mis-orientation on the currents is studied analytically and numerically. It is observed that, the current phase relations are totally different from the case of ideal transparent Josephson junctions between d-wave superconductors and two s-wave superconductors. This apparatus can be used to demonstrate d-wave order parameter in high Tc superconductors.

Non-equilibrium spectroscopy of high-Tc superconductors

International Nuclear Information System (INIS)

Krasnov, V M

2009-01-01

In superconductors, recombination of two non-equilibrium quasiparticles into a Cooper pair results in emission of excitation that mediates superconductivity. This is the basis of the proposed new type of 'non-equilibrium' spectroscopy of high T c superconductors, which may open a possibility for direct and unambiguous determination of the coupling mechanism of high T c superconductivity. In case of low T c superconductors, the feasibility of such the non-equilibrium spectroscopy was demonstrated in classical phonon generation-detection experiments almost four decades ago. Recently it was demonstrated that a similar technique can be used for high T c superconductors, using natural intrinsic Josephson junctions both for injection of non-equilibrium quasiparticles and for detection of the non-equilibrium radiation. Here I analyze theoretically non-equilibrium phenomena in intrinsic Josephson junctions. It is shown that extreme non-equilibrium state can be achieved at bias equal to integer number of the gap voltage, which can lead to laser-like emission from the stack. I argue that identification of the boson type, constituting this non-equilibrium radiation would unambiguously reveal the coupling mechanism of high Tc superconductors.

Optimization of a superconducting linear levitation system using a soft ferromagnet

Science.gov (United States)

Agramunt-Puig, Sebastia; Del-Valle, Nuria; Navau, Carles; Sanchez, Alvaro

2013-04-01

The use of guideways that combine permanent magnets and soft ferromagnetic materials is a common practice in magnetic levitation transport systems (maglevs) with bulk high-temperature superconductors. Theoretical tools to simulate in a realistic way both the behavior of all elements (permanent magnets, soft ferromagnet and superconductor) and their mutual effects are helpful to optimize the designs of real systems. Here we present a systematic study of the levitation of a maglev with translational symmetry consisting of a superconducting bar and a guideway with two identic permanent magnets and a soft ferromagnetic material between them. The system is simulated with a numerical model based on the energy minimization method that allows to analyze the mutual interaction of the superconductor, assumed to be in the critical state, and a soft ferromagnet with infinite susceptibility. Results indicate that introducing a soft ferromagnet within the permanent magnets not only increases the levitation force but also improves the stability. Besides, an estimation of the relative sizes and shapes of the soft ferromagnet, permanent magnets and the superconductor in order to obtain large levitation force with full stability is provided.

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Solubility study of Tc(IV) oxides

International Nuclear Information System (INIS)

Liu, D.J.; Fan, X.H.

2005-01-01

The deep geological disposal of the high level radioactive wastes is expected to be a safer disposal method in most countries. The long-lived fission product 99 Tc is present in large quantities in nuclear wastes and its chemical behavior in aqueous solution is of considerable interest. Under oxidizing conditions technetium exists as the anionic species TcO 4 - whereas under the reducing conditions, expected to exist in a deep geological repository, it is generally predicted that technetium will be present as TcO 2 ·nH 2 O. Hence, the mobility of Tc(IV) in reducing groundwater may be limited by the solubility of TcO 2 ·nH 2 O under these conditions. Due to this fact it is important to investigate the solubility of TcO 2 ·nH 2 O. The solubility determines the release of radionuclides from waste form and is used as a source term in radionuclide migration analysis in performance assessment of radioactive waste repository. Technetium oxide was prepared by reduction of a technetate solution with Sn 2 + . The solubility of Tc(IV) oxide has been determined in simulated groundwater and redistilled water under aerobic and anaerobic conditions. The effects of pH and CO 3 2- concentration of solution on solubility of Tc(IV) oxide were studied. The concentration of total technetium and Tc(IV) species in the solutions were periodically determined by separating the oxidized and reduced technetium species using a solvent extraction procedure and counting the beta activity of the 99 Tc with a liquid scintillation counter. The experimental results show that the rate of oxidation of Tc(IV) in simulated groundwater and redistilled water is about (1.49-1.86) x 10 -9 mol/(L·d) under aerobic conditions, but Tc(IV) in simulated groundwater and redistilled water is not oxidized under anaerobic conditions. Under aerobic or anaerobic conditions the solubility of Tc(IV) oxide in simulated groundwater and redistilled water is equal on the whole after centrifugation or ultrafiltration. The

Third harmonic generation of high power far infrared radiation in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Urban, M [Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)

1996-04-01

We investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 {mu}m and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 {mu}m laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. figs., tabs., refs.

Third harmonic generation of high power far infrared radiation in semiconductors

International Nuclear Information System (INIS)

Urban, M.

1996-04-01

In this work we investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 μm and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 μm laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. (author) figs

93Tc and sup(93m)Tc gamma spectra

International Nuclear Information System (INIS)

Podkopaev, Yu.N.; Zarubin, P.P.; Kobelev, V.F.; Padalko, V.Yu.; Khrisanfov, Yu.V.

1977-01-01

The sup(93,93m)Tc decay was studied. The spectra of γ-rays accompanying the decay of this nuclide were studied. 93 Tc and sup(93m)Tc were obtained in the (dn)-reaction on 92 Mo. To ensure a more reliable identification of γ-rays, the isotopic composition of the targets, the bombardment time, the energy of the bombarding deuterons (5-12 MeV) and the spectrum processing program were varied. The energies and relative intensities of the γ-rays of the 93 Tc and sup(93m)Tc decay are listed in tables together with data of other investigatxons. The results obtained largely confirm the known data. Four new transitions were added in the sup(93m)Tc spectrum namely 1046.8, 2011.8, 2182.0, and 2861.5 keV. The 2739.0 keV transition was eliminated from the 93 Tc spectrum. The appropriate changes and additions were made in the 93 Tc decay scheme, and three new levels were introduced: 2479.0, 2821.7, and 3025.8 keV. The values of log ft of some levels of 93 Tc were estimated

Room-temperature ferromagnetism in cerium dioxide powders

Energy Technology Data Exchange (ETDEWEB)

Rakhmatullin, R. M., E-mail: rrakhmat@kpfu.ru; Pavlov, V. V.; Semashko, V. V.; Korableva, S. L. [Kazan Federal University, Institute of Physics (Russian Federation)

2015-08-15

Room-temperature ferromagnetism is detected in a CeO{sub 2} powder with a grain size of about 35 nm and a low (<0.1 at %) manganese and iron content. The ferromagnetism in a CeO{sub 2} sample with a submicron crystallite size and the same manganese and iron impurity content is lower than in the nanocrystalline sample by an order of magnitude. Apart from ferromagnetism, both samples exhibit EPR spectra of localized paramagnetic centers, the concentration of which is lower than 0.01 at %. A comparative analysis of these results shows that the F-center exchange (FCE) mechanism cannot cause ferromagnetism. This conclusion agrees with the charge-transfer ferromagnetism model proposed recently.

Optimization of a superconducting linear levitation system using a soft ferromagnet

International Nuclear Information System (INIS)

Agramunt-Puig, Sebastia; Del-Valle, Nuria; Navau, Carles; Sanchez, Alvaro

2013-01-01

Highlights: ► Study of the levitation of a superconducting bar over different magnetic guideways. ► A soft ferromagnet within permanent magnets improves levitation stability. ► We study the best geometry for large levitation force with full stability. -- Abstract: The use of guideways that combine permanent magnets and soft ferromagnetic materials is a common practice in magnetic levitation transport systems (maglevs) with bulk high-temperature superconductors. Theoretical tools to simulate in a realistic way both the behavior of all elements (permanent magnets, soft ferromagnet and superconductor) and their mutual effects are helpful to optimize the designs of real systems. Here we present a systematic study of the levitation of a maglev with translational symmetry consisting of a superconducting bar and a guideway with two identic permanent magnets and a soft ferromagnetic material between them. The system is simulated with a numerical model based on the energy minimization method that allows to analyze the mutual interaction of the superconductor, assumed to be in the critical state, and a soft ferromagnet with infinite susceptibility. Results indicate that introducing a soft ferromagnet within the permanent magnets not only increases the levitation force but also improves the stability. Besides, an estimation of the relative sizes and shapes of the soft ferromagnet, permanent magnets and the superconductor in order to obtain large levitation force with full stability is provided

Optimization of a superconducting linear levitation system using a soft ferromagnet

Energy Technology Data Exchange (ETDEWEB)

Agramunt-Puig, Sebastia; Del-Valle, Nuria; Navau, Carles, E-mail: carles.navau@uab.cat; Sanchez, Alvaro

2013-04-15

Highlights: ► Study of the levitation of a superconducting bar over different magnetic guideways. ► A soft ferromagnet within permanent magnets improves levitation stability. ► We study the best geometry for large levitation force with full stability. -- Abstract: The use of guideways that combine permanent magnets and soft ferromagnetic materials is a common practice in magnetic levitation transport systems (maglevs) with bulk high-temperature superconductors. Theoretical tools to simulate in a realistic way both the behavior of all elements (permanent magnets, soft ferromagnet and superconductor) and their mutual effects are helpful to optimize the designs of real systems. Here we present a systematic study of the levitation of a maglev with translational symmetry consisting of a superconducting bar and a guideway with two identic permanent magnets and a soft ferromagnetic material between them. The system is simulated with a numerical model based on the energy minimization method that allows to analyze the mutual interaction of the superconductor, assumed to be in the critical state, and a soft ferromagnet with infinite susceptibility. Results indicate that introducing a soft ferromagnet within the permanent magnets not only increases the levitation force but also improves the stability. Besides, an estimation of the relative sizes and shapes of the soft ferromagnet, permanent magnets and the superconductor in order to obtain large levitation force with full stability is provided.

Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering.

Science.gov (United States)

Jang, Hyuk-Jae; Richter, Curt A

2017-01-01

Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Josephson tunnel junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Weides, M.P.

2006-01-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Josephson tunnel junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Weides, M.P.

2006-07-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Control of magnetism in dilute magnetic semiconductor (Ga,Mn)As films by surface decoration of molecules

Science.gov (United States)

Wang, Hailong; Wang, Xiaolei; Xiong, Peng; Zhao, Jianhua

2016-03-01

The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,Mn)As thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,Mn)As thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,Mn)As and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

Control of magnetism in dilute magnetic semiconductor (Ga,MnAs films by surface decoration of molecules

Directory of Open Access Journals (Sweden)

Hailong eWang

2016-03-01

Full Text Available The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,MnAs thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,MnAs thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,MnAs and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

Superconductor-ferromagnet-superconductor nanojunctions from perovskite materials

International Nuclear Information System (INIS)

Štrbík, V.; Beňačka, Š.; Gaži, Š.; Španková, M.; Šmatko, V.; Knoška, J.; Gál, N.; Chromik, Š.; Sojková, M.; Pisarčík, M.

2017-01-01

Highlights: • Superconductor-ferromagnet-superconductor nanojunction. • Nanojunctions prepared by Ga"3"+ focused ion beam patterning. • Indication of triplet Cooper pair component in junction superconducting current. • Qualitative agreement with theoretical model. - Abstract: The lateral superconductor-ferromagnet–superconductor (SFS) nanojunctions based on high critical temperature superconductor YBa_2Cu_3O_x (YBCO) and half-metallic ferromagnet La_0_._6_7Sr_0_._3_3MnO_3 (LSMO) thin films were prepared to investigate a possible presence of long range triplet component (LRTC) of Cooper pairs in the LSMO. We applied Ga"3"+ focused ion beam patterning to create YBCO/LSMO/YBCO lateral type nanojunctions with LSMO length as small as 40 nm. The resistivity vs. temperature, critical current density vs. temperature and resistance vs. magnetic field dependence were studied to recognize the LRTC of Cooper pairs in the LSMO. A non-monotonic temperature dependence of junction critical current density and a decrease of the SFS nanojunction resistance in increased magnetic field were observed. Only weak manifestations of LRTC and some qualitative agreement with theory were found out in SFS nanojunctions realized from the perovskite materials. The presence of equal-spin triplet component of Cooper pairs in half-metallic LSMO ferromagnet is not such apparent as in SFS junctions prepared from low temperature superconductors NbTiN and half-metallic ferromagnet CrO_2.

Direct {sup 99m}Tc labeling of Herceptin (trastuzumab) by {sup 99m}Tc(I) tricarbonyl ion