WorldWideScience

Sample records for high-tc ferromagnetic semiconductors

  1. Computational nano-materials design for high-TC ferromagnetism in wide-gap magnetic semiconductors

    International Nuclear Information System (INIS)

    Katayama-Yoshida, H.; Sato, K.; Fukushima, T.; Toyoda, M.; Kizaki, H.; Dinh, V.A.; Dederichs, P.H.

    2007-01-01

    We propose materials design of high-T C wide band-gap dilute magnetic semiconductors (DMSs) based on first-principles calculations by using the Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA) method. First, we discuss a unified physical picture of ferromagnetism in II-VI and III-V DMSs and show that DMS family is categorized into two groups depending on the electronic structure. One is the system where Zener's double exchange mechanism dominates in the ferromagnetic interaction, and in the other systems Zener's p-d exchange mechanism dominates. Next, we develop an accurate method for T C calculation for the DMSs and show that the mean field approximation completely fails to predict Curie temperature of DMS in particular for wide-gap DMS where the exchange interaction is short-ranged. The calculated T C of homogeneous DMSs by using the present method agrees very well with available experimental values. For more realistic material design, we simulate spinodal nano-decomposition by applying the Monte Carlo method to the Ising model with ab initio chemical pair interactions between magnetic impurities in DMS. It is found that by controlling the dimensionality of the decomposition various characteristic phases occur in DMS such as 3D Dairiseki-phase and 1D Konbu-phase, and it is suggested that super-paramagnetic blocking phenomena should be important to understand the magnetism of wide-gap DMS. Based on the present simulations for spinodal nano-decomposition, we propose a new crystal growth method of positioning by seeding and shape controlling method in 100 Tera-bit density of nano-magnets in the semiconductor matrix with high-T C (or high-T B )

  2. Critical currents and superconductivity ferromagnetism coexistence in high-Tc oxides

    CERN Document Server

    Khene, Samir

    2016-01-01

    The book comprises six chapters which deal with the critical currents and the ferromagnetism-superconductivity coexistence in high-Tc oxides. It begins by gathering key data for superconducting state and the fundamental properties of the conventional superconductors, followed by a recap of the basic theories of superconductivity. It then discusses the differences introduced by the structural anisotropy on the Ginzburg-Landau approach and the Lawrence-Doniach model before addressing the dynamics of vortices and the ferromagnetism-superconductivity coexistence in high-Tc oxides, and provides an outline of the pinning phenomena of vortices in these materials, in particular the pinning of vortices by the spins. It elucidates the methods to improve the properties of superconducting materials for industrial applications. This optimization aims at obtaining critical temperatures and densities of critical currents at the maximum level possible. Whereas the primary objective is the basic mechanisms pushing the superco...

  3. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  4. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  5. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  6. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  7. High Tc Superconducting Magnet Excited by a Semiconductor Thermoelectric Element

    Science.gov (United States)

    Kuriyama, T.; Ono, M.; Tabe, S.; Oguchi, A.; Okamura, T.

    2006-04-01

    A high Tc superconducting (HTS) magnet excited by a thermal electromotive force of a thermoelectric element is studied. This HTS magnet has the advantages of compactness, lightweight and continuous excitation in comparison with conventional HTS magnets, because this HTS magnet does not need a large external power source. In this system, a heat input into the cryogenic environment is necessary to excite the thermoelectric element for constant operation. This heat generation, however, causes a rise in temperature of an HTS coil and reduces the system performance. In this paper, a newly designed magnet system which adopted a two-stage GM cryocooler was investigated. It enabled us to control the temperature of a thermoelectric element and that of an HTS coil independently. The temperature of the HTS coil could be kept at 10-20 K at the second stage of the GM cryocooler, while the thermoelectric element could be excited at higher temperature in the range of 50-70 K at the first stage, where the performance of the thermoelectric element was higher. The experimental results on this HTS magnet are shown and the possibility of the thermoelectric element as a main power source of the HTS magnets is discussed.

  8. Defect mediated magnetic interaction and high Tc ferromagnetism in Co doped ZnO nanoparticles.

    Science.gov (United States)

    Pal, Bappaditya; Giri, P K

    2011-10-01

    Structural, optical and magnetic studies have been carried out for the Co-doped ZnO nanoparticles (NPs). ZnO NPs are doped with 3% and 5% Co using ball milling and ferromagnetism (FM) is studied at room temperature and above. A high Curie temperature (Tc) has been observed from the Co doped ZnO NPs. X-ray diffraction and high resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption and photoluminescence studies on the doped samples show change in band structure and oxygen vacancy defects, respectively. Micro-Raman studies of doped samples shows defect related additional strong bands at 547 and 574 cm(-1) confirming the presence of oxygen vacancy defects in ZnO lattice. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear M-H loop with saturation magnetization and coercive field of the order of 4-6 emu/g and 260 G, respectively. Temperature dependence of magnetization measurement shows sharp ferromagnetic to paramagnetic transition with a high Tc = 791 K for 3% Co doped ZnO NPs. Ferromagnetic ordering is interpreted in terms of overlapping of polarons mediated through oxygen vacancy defects based on the bound magnetic polaron (BMP) model. We show that the observed FM data fits well with the BMP model involving localised carriers and magnetic cations.

  9. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  10. Onset of itinerant ferromagnetism associated with semiconductor ...

    Indian Academy of Sciences (India)

    In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

  11. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  12. Ferromagnetism in diluted magnetic semiconductor heterojunction systems

    Czech Academy of Sciences Publication Activity Database

    Lee, B.; Jungwirth, Tomáš; MacDonald, A. H.

    2002-01-01

    Roč. 17, - (2002), s. 393-403 ISSN 0268-1242 R&D Projects: GA ČR GA202/98/0085; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * heterostructures Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.241, year: 2002

  13. An active magnetic bearing with high Tc superconducting coils and ferromagnetic cores

    International Nuclear Information System (INIS)

    Brown, G.V.; DiRusso, E.; Provenza, A.J.

    1996-01-01

    A proof-of-feasibility demonstration showed that high-T c , superconductor (HTS) coils can be used in a high-load, active magnetic bearing in LN 2 . A homopolar radial bearing with commercially wound HTS (Bi 2223) bias and control coils produced over 890 N (200 lb) radial load capacity (measured nonrotating) and supported a shaft to 14000 rpm. The goal was to show that HTS coils can operate stably with ferromagnetic cores in a feedback controlled system at a current density similar to that for Cu in LN 2 . The bias coil, wound with nontwisted, multifilament HTS conductor, dissipated negligible power for its direct current. The control coils, wound with monofilament HTS sheathed in Ag, dissipated negligible power for direct current. AC losses increased rapidly with frequency and quadratically with AC amplitude. Above about 2 Hz, the effective resistance of the control coils exceeds that of the silver which is in electrical parallel with the oxide superconductor. These results show that twisted multifilament conductor is not needed for stable levitation but may be desired to reduce control power for sizable dynamic loads

  14. Anomalous hall effect in ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Niu, Q.; MacDonald, A. H.

    2002-01-01

    Roč. 88, č. 20 (2002), s. 207208-1-207208-4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * anomalous Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.323, year: 2002

  15. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  16. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  17. Feasibility of introducing ferromagnetic materials to onboard bulk high-Tc superconductors to enhance the performance of present maglev systems

    International Nuclear Information System (INIS)

    Deng, Zigang; Wang, Jiasu; Zheng, Jun; Zhang, Ya; Wang, Suyu

    2013-01-01

    Highlights: ► Ferromagnetic materials guide the flux distribution of the PMG to bulk positions. ► With ferromagnetic materials, guidance performance can be enhanced greatly. ► A new HTS Maglev system with onboard ferromagnetic materials is designed. ► The design can meet large guidance force requirements for practical applications. -- Abstract: Performance improvement is a long-term research task for the promotion of practical application of promising high-temperature superconducting (HTS) magnetic levitation (maglev) vehicle technologies. We studied the feasibility to enhance the performance of present HTS Maglev systems by introducing ferromagnetic materials to onboard bulk superconductors. The principle here is to make use of the high magnetic permeability of ferromagnetic materials to alter the flux distribution of the permanent magnet guideway for the enhancement of magnetic field density at the position of the bulk superconductors. Ferromagnetic iron plates were added to the upper surface of bulk superconductors and their geometric and positioning effects on the maglev performance were investigated experimentally. Results show that the guidance performance (stability) was enhanced greatly for a particular setup when compared to the present maglev system which is helpful in the application where large guidance forces are needed such as maglev tracks with high degrees of curves

  18. Theoretical models of ferromagnetic III-V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; Kučera, Jan; MacDonald, A. H.

    2003-01-01

    Roč. 3, - (2003), s. 461-464 ISSN 1567-1739. [Mesoscopic Electronics COST Workshop. Catania, 16.10.2002-19.10.2002] Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.117, year: 2002

  19. Spin Orbit Torque in Ferromagnetic Semiconductors

    KAUST Repository

    Li, Hang

    2016-06-21

    Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read\\' and `write\\' in memory devices can be significantly improved. Hence, the manipulation of electron spin in electronic devices becomes more and more appealing for the advancement of microelectronics. In spin-based devices, the manipulation of ferromagnetic order parameter using electrical currents is a very useful means for current-driven operation. Nowadays, most of magnetic memory devices are based on the so-called spin transfer torque, which stems from the spin angular momentum transfer between a spin-polarized current and the magnetic order parameter. Recently, a novel spin torque effect, exploiting spin-orbit coupling in non-centrosymmetric magnets, has attracted a massive amount of attention. This thesis addresses the nature of spin-orbit coupled transport and torques in non-centrosymmetric magnetic semiconductors. We start with the theoretical study of spin orbit torque in three dimensional ferromagnetic GaMnAs. Using the Kubo formula, we calculate both the current-driven field-like torque and anti-damping-like torque. We compare the numerical results with the analytical expressions in the model case of a magnetic Rashba two-dimensional electron gas. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described. Subsequently we study spin-orbit torques in two dimensional hexagonal crystals such as graphene, silicene, germanene and stanene. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. This thesis then addresses the influence of the quantum spin Hall

  20. Feasibility of introducing ferromagnetic materials to onboard bulk high-Tc superconductors to enhance the performance of present maglev systems

    Science.gov (United States)

    Deng, Zigang; Wang, Jiasu; Zheng, Jun; Zhang, Ya; Wang, Suyu

    2013-02-01

    Performance improvement is a long-term research task for the promotion of practical application of promising high-temperature superconducting (HTS) magnetic levitation (maglev) vehicle technologies. We studied the feasibility to enhance the performance of present HTS Maglev systems by introducing ferromagnetic materials to onboard bulk superconductors. The principle here is to make use of the high magnetic permeability of ferromagnetic materials to alter the flux distribution of the permanent magnet guideway for the enhancement of magnetic field density at the position of the bulk superconductors. Ferromagnetic iron plates were added to the upper surface of bulk superconductors and their geometric and positioning effects on the maglev performance were investigated experimentally. Results show that the guidance performance (stability) was enhanced greatly for a particular setup when compared to the present maglev system which is helpful in the application where large guidance forces are needed such as maglev tracks with high degrees of curves.

  1. Field-effect magnetization reversal in ferromagnetic semiconductor quantum wellls

    Czech Academy of Sciences Publication Activity Database

    Lee, B.; Jungwirth, Tomáš; MacDonald, A. H.

    2002-01-01

    Roč. 65, č. 19 (2002), s. 193311-1-193311-4 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductor quantum wells * magnetization reversal process Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  2. Magnetization relaxation in (Ga, Mn)As ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Sinova, J.; Jungwirth, Tomáš; Liu, X.; Sasaki, Y.; Furdyna, J. K.; Atkinson, W. A.; MacDonald, A. H.

    2004-01-01

    Roč. 69, č. 8 (2004), 085209/1-085209/6 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : magnetization relaxation * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.075, year: 2004

  3. Ballistic spin filtering across the ferromagnetic-semiconductor interface

    Directory of Open Access Journals (Sweden)

    Y.H. Li

    2012-03-01

    Full Text Available The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface between ferromagnetic metals and semiconductor superlattice is developed by exciting the spin polarized electrons into n-type AlAs/GaAs superlattice layer at a much higher energy level and then ballistically tunneling through the barrier into the ferromagnetic film. Since both the helicity-modulated and static photocurrent responses are experimentally measurable quantities, the physical quantity of interest, the relative asymmetry of spin-polarized tunneling conductance, could be extracted experimentally in a more straightforward way, as compared with previous models. The present physical model serves guidance for studying spin detection with advanced performance in the future.

  4. Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

    Science.gov (United States)

    Crowell, Paul A.; Liu, Changjiang; Patel, Sahil; Peterson, Tim; Geppert, Chad C.; Christie, Kevin; Stecklein, Gordon; Palmstrøm, Chris J.

    2016-10-01

    A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (C. Liu, S. J. Patel, T. A. Peterson, C. C. Geppert, K. D. Christie, C. J. Palmstrøm, and P. A. Crowell, "Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance," Nature Communications 7, 10296 (2016). http://dx.doi.org/10.1038/ncomms10296

  5. Spin-current diode with a ferromagnetic semiconductor

    International Nuclear Information System (INIS)

    Sun, Qing-Feng; Xie, X. C.

    2015-01-01

    Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

  6. Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

    International Nuclear Information System (INIS)

    An Xingtao; Liu Jianjun

    2008-01-01

    Based on the scattering approach, we investigate transport properties of electrons in a one-dimensional waveguide that contains a ferromagnetic/semiconductor/ferromagnetic heterojunction and tunnel barriers in the presence of Rashba and Dresselhaus spin-orbit interactions. We simultaneously consider significant quantum size effects, quantum coherence, Rashba and Dresselhaus spin-orbit interactions and noncollinear magnetizations. It is found that the tunnel barrier plays a decisive role in the transmission coefficient and shot noise of the ballistic spin electron transport through the heterojunction. When the small tunnel barriers are considered, the transport properties of electrons are quite different from those without tunnel barriers

  7. Curie temperature trends in (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; König, J.; Sinova, J.; Kučera, Jan; MacDonald, A. H.

    2002-01-01

    Roč. 66, č. 1 (2002), s. 012402-1-012402-4 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10; GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * Curie temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  8. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  9. Theory of ferromagnetic (III,Mn)V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; Mašek, Jan; Kučera, Jan; MacDonald, A. H.

    2006-01-01

    Roč. 78, - (2006), s. 809-859 ISSN 0034-6861 R&D Projects: GA MŠk LC510; GA ČR GA202/05/0575 Grant - others:EPSRC(GB) GR/S81407/01; U.S. Department of Energy(US) DE-FG03-02ER45958; U.S. Office of Naval research(US) OMR-N000140610122 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * (III,Mn)V compounds Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 33.508, year: 2006

  10. Ferromagnetic semiconductor-metal transition in europium monoxide

    International Nuclear Information System (INIS)

    Arnold, M.

    2007-10-01

    We present a microscopical model to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The physical properties of the model are systematically studied, whereas the main remark is on the interplay between magnetic order and the transport properties. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, obtained for EuO 1-x or Gd-doped Gd x Eu 1-x 0. In particular the doping dependence of the Curie temperature is reproduced The existence of correlation-induced local moments on the impurity sites is essential for this description. (orig.)

  11. Energy relaxation and heating of magnons in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Korenblit, I.Ya.; Tankhilevich, B.G.

    1976-01-01

    The warming-up of electrons and magnons by a high electrical field in ferromagnetic semiconductors with wide conduction bands has been considered. The warming-up of magnons determines the dependence of the magnetic characteristics of the semiconductor (for example, its magnetization) on the electric field and leads to some interesting peculiarities in the current-voltage characteristic (CVC). In some cases, owing to a rapid decrease of electrical conductivity with the increasing temperature of magnons, the CVC may contain a descending part. Since the energy relaxation of magnons occurs very slowly, the time during which the stationary state sets in, although varying widely as a function of the lattice temperature T and the electron gas concentration n, may reach values of the order of milliseconds

  12. Ferromagnetic resonance features of degenerate GdN semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Vidyasagar, Reddithota, E-mail: dr.vidyasagar1979@gmail.com [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Sakurai, Takahiro; Shimokawa, Tokuro [Centre for Support to Research and Education Activities, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Ohta, Hitoshi [Molecular Photoscience Research Center and Graduate School of Science, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan)

    2017-06-15

    Using X-band Ferromagnetic Resonance (FMR) Spectroscopy, we demonstrate the microscopic ferromagnetic resonance features of degenerated GdN semiconductor. The FMR spectrum suggests a single resonance mode below 10 K; interestingly, this particular structure is found to exhibit a peculiar magnetic resonance (PMR) on the top of the uniform FMR while temperature increases from 12–36 K. The low-field PMR mode attributed to the differently magnetized part of the film with an easy in-plane axis. The narrow-field gap between PMR and uniform FMR suggests the strong coupling owning to the differently magnetized part with easy in-plane axis and the magnetized part with an out-of-plane axis. The saturation magnetization, cubic magnetocrystalline anisotropy, and uniaxial anisotropy of GdN epitaxial film have been evaluated by the angular-dependence FMR. - Highlights: • Observation of peculiar magnetic resonance (PMR) on the top of ferromagnetic resonance (FMR). • Newly evolving PMR manifests differently magnetized part of the film with an easy in-plane axis. • Narrow gap between PMR and FMR owing to the strong interaction between two spin–wave resonances. • Uniaxial anisotropy increases with GdN thickness decreases.

  13. Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

    Science.gov (United States)

    Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

    2012-07-01

    Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

  14. Ferromagnetic semiconductor-metal transition in heterostructures of europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Stollenwerk, Tobias; Kroha, Johann [Physikalisches Institut der Universitaet Bonn (Germany)

    2012-07-01

    Experiments on thin films of electron doped europium monoxide show a simultaneous ferromagnetic semiconductor-metal transition which goes along with a huge drop in resistivity over several orders of magnitude. Therefore, this material is a very promising candidate for spintronics applications. We have developed a theory which correctly predicts the simultaneous phase transition in thin films of electron doped EuO and the increase of the Curie temperature T{sub C} with doping concentration. The origin of the increased T{sub C} lies in the enhanced RKKY interaction between the localized 4f moments of the Eu atoms. Therefore, the phase transition is controlled by the population of the conduction band. We investigate the influence of film thickness and interface effects on the population of the conduction band and on the magnetic and electronic properties of the EuO film.

  15. Ferromagnetic semiconductor-metal transition in europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Arnold, M.

    2007-10-15

    We present a microscopical model to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The physical properties of the model are systematically studied, whereas the main remark is on the interplay between magnetic order and the transport properties. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, obtained for EuO{sub 1-x} or Gd-doped Gd{sub x}Eu{sub 1-x}0. In particular the doping dependence of the Curie temperature is reproduced The existence of correlation-induced local moments on the impurity sites is essential for this description. (orig.)

  16. Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

    International Nuclear Information System (INIS)

    Pandey, R.K.

    2008-01-01

    The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: (1) wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; (2) n-type semiconductors; (3) they exhibit well defined magnetic hysteresis loops and (4) their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A and M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of

  17. 100% spin accumulation in non-half-metallic ferromagnet-semiconductor junctions

    International Nuclear Information System (INIS)

    Petukhov, A G; Niggemann, J; Smelyanskiy, V N; Osipov, V V

    2007-01-01

    We show that the spin polarization of electron density in non-magnetic degenerate semiconductors can achieve 100%. The effect of 100% spin accumulation does not require a half-metallic ferromagnetic contact and can be realized in ferromagnet-semiconductor FM-n + -n junctions even at moderate spin selectivity of the FM-n + contact when the electrons with spin 'up' are extracted from n semiconductor through the heavily doped n + layer into the ferromagnet and the electrons with spin 'down' are accumulated near the n + -n interface. We derived a general equation relating spin polarization of the current to that of the electron density in non-magnetic semiconductors. We found that the effect of complete spin polarization is achieved near the n + -n interface when the concentration of the spin 'up' electrons tends to zero in this region while the diffusion current of these electrons remains finite

  18. Nonthermal Photocoercivity Effect in Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor

    Science.gov (United States)

    Kiessling, T.; Astakhov, G. V.; Hoffmann, H.; Korenev, V. L.; Schwittek, J.; Schott, G. M.; Gould, C.; Ossau, W.; Brunner, K.; Molenkamp, L. W.

    2011-12-01

    We report a photoinduced change of the coercive field of a low doped Ga1-xMnxAs ferromagnetic semiconductor under very low intensity illumination. This photocoercivity effect (PCE) is local and reversible, which enables the controlled formation of localized magnetization domains. The PCE arises from a light induced lowering of the domain wall pinning energy as confirmed by test experiments on high doped, fully metallic ferromagnetic Ga1-xMnxAs.

  19. Effect of thermodynamic fluctuations of magnetization on the bound magnetic polaron state in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Bednarski, Henryk; Spałek, Józef

    2014-01-01

    We extend the theory of the bound magnetic polaron (BMP) in diluted paramagnetic semiconductors to the situation with a ferromagnetic phase transition. This is achieved by including the classical Gaussian fluctuations of magnetization from the quartic (non-Gaussian) term in the effective Ginzburg–Landau Hamiltonian for the spins. Within this approach, we find a ferromagnetically ordered state within the BMP in the temperature range well above the Curie temperature for the host magnetic semiconductor. Numerical results are compared directly with the recently available experimental data for the ferromagnetic semiconductor GdN. The agreement is excellent, given the simplicity of our model, and is because the polaron size (≃1.4 nm) encompasses a relatively large but finite number (N≈400) of quasiclassical spins S=7/2 coming from Gd 3+ ions. The presence of BMP invalidates the notion of critical temperature and thus makes the incorporation of classical Gaussian fluctuations sufficient to realistically describe the situation. (paper)

  20. Ferromagnetic clusters induced by a nonmagnetic random disorder in diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bui, Dinh-Hoi [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam); Physics Department, Hue University’s College of Education, 34 Le Loi, Hue (Viet Nam); Phan, Van-Nham, E-mail: phanvannham@dtu.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2016-12-15

    In this work, we analyze the nonmagnetic random disorder leading to a formation of ferromagnetic clusters in diluted magnetic semiconductors. The nonmagnetic random disorder arises from randomness in the host lattice. Including the disorder to the Kondo lattice model with random distribution of magnetic dopants, the ferromagnetic–paramagnetic transition in the system is investigated in the framework of dynamical mean-field theory. At a certain low temperature one finds a fraction of ferromagnetic sites transiting to the paramagnetic state. Enlarging the nonmagnetic random disorder strength, the paramagnetic regimes expand resulting in the formation of the ferromagnetic clusters.

  1. Piezo-voltage control of magnetization orientation in a ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, M.; Brandlmaier, A.; Gepraegs, S.; Opel, M.; Gross, R. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Bihler, C.; Brandt, M.S. [Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching (Germany); Schoch, W.; Limmer, W. [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany); Goennenwein, S.T.B.

    2008-06-15

    The possibility to control magnetic properties via electrical fields is investigated in a piezoelectric actuator/ferromagnetic semiconductor thin film hybrid structure. Using anisotropic magnetoresistance techniques, the magnetic anisotropy and the magnetization orientation within the plane of the ferromagnetic film are measured quantitatively. The experiments reveal that the application of an electrical field to the piezoelectric actuator allows to continuously and reversibly rotate the magnetization orientation in the ferromagnet by about 70 . (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

    CERN Document Server

    Pereira, LMC; Wahl, U

    Scientific findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last fe...

  3. Defect-induced ferromagnetism in semiconductors: A controllable approach by particle irradiation

    International Nuclear Information System (INIS)

    Zhou, Shengqiang

    2014-01-01

    Making semiconductors ferromagnetic has been a long dream. One approach is to dope semiconductors with transition metals (TM). TM ions act as local moments and they couple with free carriers to develop collective magnetism. However, there are no fundamental reasons against the possibility of local moment formation from localized sp states. Recently, ferromagnetism was observed in nonmagnetically doped, but defective semiconductors or insulators including ZnO and TiO 2 . This kind of observation challenges the conventional understanding of ferromagnetism. Often the defect-induced ferromagnetism has been observed in samples prepared under non-optimized condition, i.e. by accident or by mistake. Therefore, in this field theory goes much ahead of experimental investigation. To understand the mechanism of the defect-induced ferromagnetism, one needs a better controlled method to create defects in the crystalline materials. As a nonequilibrium and reproducible approach of inducing defects, ion irradiation provides such a possibility. Energetic ions displace atoms from their equilibrium lattice sites, thus creating mainly vacancies, interstitials or antisites. The amount and the distribution of defects can be controlled by the ion fluence and energy. By ion irradiation, we have generated defect-induced ferromagnetism in ZnO, TiO 2 and SiC. In this short review, we also summarize some results by other groups using energetic ions to introduce defects, and thereby magnetism in various materials. Ion irradiation combined with proper characterizations of defects could allow us to clarify the local magnetic moments and the coupling mechanism in defective semiconductors. Otherwise we may have to build a new paradigm to understand the defect-induced ferromagnetism

  4. Infrared magneto-optical properties of (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Sinova, J.; Jungwirth, Tomáš; Kučera, Jan; MacDonald, A. H.

    2003-01-01

    Roč. 67, č. 23 (2003), s. 235203-1 - 235203-11 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-optical properties ac-Hall conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  5. Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

    NARCIS (Netherlands)

    Vera Marun, I.J.; Jansen, R.

    2009-01-01

    We describe the fabrication of multiterminal semiconductor/ferromagnet probes for a new technique to study magnetic nanostructures: spin-filter scanning tunneling microscopy. We describe the principle of the technique, which is based on spin-polarized tunneling and subsequent analysis of the spin

  6. Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; Wang, K. Y.; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Foxon, C. T.; Niu, Q.; MacDonald, A. H.

    2003-01-01

    Roč. 83, č. 2 (2003), s. 320-322 ISSN 0003-6951 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * dc transport properties * (Ga, Mn)As Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.049, year: 2003

  7. Magnetic and transoprt properties of (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; MacDonald, A. H.

    2003-01-01

    Roč. 104, - (2003), s. 103-112 ISSN 0587-4246 R&D Projects: GA ČR GA202/98/0085 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * magneto-transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.473, year: 2003

  8. Mechanism of carrier-induced ferromagnetism in diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Takahashi, M.; Furukawa, N.; Kubo, K.

    2004-01-01

    Using the spin-polarized band obtained by applying the dynamical coherent potential approximation to a simple model, we have calculated the magnetization of Ga x Mn 1-x As as a function of the temperature for various values of carrier density. The result is consistent with the experimental observation, supporting the view previously proposed by us that the ferromagnetism is induced by the carriers in the bandtail through double-exchange-like mechanism

  9. Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

    KAUST Repository

    Wang, Yao

    2017-04-12

    We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

  10. Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

    KAUST Repository

    Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlö gl, Udo; Huang, Wei

    2017-01-01

    We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

  11. Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

    International Nuclear Information System (INIS)

    Ning, Deng; Lei, Zhang; Shu-Chao, Zhang; Pei-Yi, Chen; Jian-Shi, Tang

    2010-01-01

    For ferromagnetic metal (FM)/semiconductor (SC) structure with ohmic contact, the effect of carrier polarization in the semiconductor combined with drift part of injection current on current polarization is investigated. Based on the general model we established here, spin injection efficiency under different injection current levels is calculated. Under a reasonable high injection current, current polarization in the semiconductor is actually much larger than that predicted by the conductivity mismatch model because the effect of carrier polarization is enhanced by the increasing drift current. An appreciable current polarization of 1% could be achieved for the FM/SC structure via ohmic contact, which means that efficient spin injection from FM into SC via ohmic contact is possible. The reported dependence of current polarization on temperature is verified quantitatively. To achieve even larger spin injection efficiency, a gradient doping semiconductor is suggested to enhance the drift current effect

  12. Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure

    Science.gov (United States)

    Kostrov, Alexander I.; Stempitsky, Viktor R.; Kazimirchik, Vladimir N.

    2008-07-01

    In this work, we present a physical model and electrical macromodel for simulation of Magnetic Tunnel Junction (MTJ) effect based on Ferromagnetic/Insulator/Semiconductor (FIS) nanostructure. A modified Brinkman model has been proposed by including the voltage-dependent density of states of the ferromagnetic electrodes in order to explain the bias dependence magnitoresistance. The model takes into account injection of carriers in the semiconductor and Shottky barrier, electron tunneling through thin insulator and spin-transfer torque writing approach in memory cell. These very promising features should constitute the third generation of Magnetoresistive RAM (MRAM). Besides, the model can efficiently be used to design magnetic CMOS circuits. The behavioral macro-model has been developed by means of Verilog-AMS language and implemented on the Cadence Virtuoso platform with Spectre simulator.

  13. Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

    Science.gov (United States)

    Bui, Cong Tinh; Garcia, Christina A. C.; Tu, Nguyen Thanh; Tanaka, Masaaki; Hai, Pham Nam

    2018-05-01

    Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

  14. Non-Drude optical conductivity of (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Yang, S.R. E.; Sinova, J.; Jungwirth, Tomáš; Shim, Y. P.; MacDonald, A. H.

    2003-01-01

    Roč. 67, č. 4 (2003), s. 045205-1 - 045205-7 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : non-Drude optical conductivity * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  15. Doping Properties of Ferromagnetic Semiconductors Investigated by the Hyperfine Interaction of Implanted Radioisotopes

    CERN Multimedia

    2002-01-01

    One of the most promising prospective applications of semiconductors will be in the field of spinelectronics. Thereby polarized spins must be injected into semiconductor structures. Ferromagnetic semiconductors (FMS) have a potential for such applications because of the coexistence of semiconducting and ferromagnetic properties. A special group of such FMS are the chromium chalcogenides of type AB$_{2}$C$_{4}$ with B = Cr. They crystallise in the structure of normal spinel. In this Proposal the application of the perturbed angular correlation technique (= PAC) for the investigation of nuclear probes in these substances is described. The radioactive probes will be implanted at the ISOLDE separator. We will start these investigations with the substances CdCr$_{2}$Se$_{4}$, CdCr$_{2}$S$_{4}$, HgCr$_{2}$Se$_{4}$, CuCr$_{2}$Se$_{4}$ and CuCr$_{2}$S$_{4}$ which are ferromagnetic with Curie temperatures between 84.5 and 460 K. In addition to the popular $^{111}$In($^{111}$Cd), which we get from other facilities, we ...

  16. Ballistic electron emissions microscopy (BEEM) of ferromagnet-semiconductor interfaces; Ballistische Elektronen Emissions Mikroskopie (BEEM) an Ferromagnet-Halbleitergrenzflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Obernhuber, S.

    2007-04-15

    For current research on spin-transistors it is important to know the characteristics of ferromagnet semiconductor interfaces. The ballistic electron emission microscopy (BEEM) is a method to investigate such a buried interface with nanometer resolution. In this work several ferromagnet/GaAs(110) interfaces have been analysed concerning their homogeneity and mean local Schottky-barrier heights (SBH) have been determined. In Addition, the resulting integral SBH was calculated from the distribution of the local SBHs and compared with the SBH determined from voltage/current characteristics. The areas with a low SBH dominate the current conduction across the interface. Additional BEEM measurements on (AlGaAs/GaAs) heterostructures have been performed. This heterostructures consist of 50 nm AlGaAs/GaAs layers. The results of the BEEM measurements indicate, that the GaAs QWs are defined by AlGaAs barriers. The transition from AlGaAs to GaAs is done within 10 nm. (orig.)

  17. The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

    Science.gov (United States)

    Chantis, Athanasios

    2009-03-01

    I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

  18. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

    2013-01-01

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  19. Effect of different conductivity between the spin polarons on spin injection in a ferromagnet/organic semiconductor system

    International Nuclear Information System (INIS)

    Mi Yilin; Zhang Ming; Yan Hui

    2008-01-01

    Spin injection across ferromagnet/organic semiconductor system with finite width of the layers was studied theoretically considering spin-dependent conductivity in the organic-semiconductor. It was found that the spin injection efficiency is directly dependent on the difference between the conductivity of the up-spin and down-spin polarons in the spin-injected organic system. Furthermore, the finite width of the structure, interfacial electrochemical-potential and conductivity mismatch have great influence on the spin injection process across ferromagnet/organic semiconductor interface

  20. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong

    2013-09-26

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  1. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    International Nuclear Information System (INIS)

    Zhou, Shengqiang

    2015-01-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III–V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III–V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III–V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III–V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components. (topical review)

  2. Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers

    Energy Technology Data Exchange (ETDEWEB)

    Cotoros, Ingrid A. [Univ. of California, Berkeley, CA (United States)

    2008-12-01

    The field of spintronics offers perspectives for seamless integration of coupled and inter-tunable electrical and magnetic properties in a single device. For integration of the spin degree of freedom with current electronic technology, new semiconductors are needed that show electrically-tunable magnetic properties at room temperature and above. Dilute magnetic semiconductors derived from III-V compounds, like GaMnAs and InMnAs, show coupled and tunable magnetic, transport, and optical properties, due to the fact that their ferromagnetism is hole-mediated. These unconventional materials are ideal systems for manipulating the magnetic order by changing the carrier polarization, population density, and energy band distribution of the complementary subsystem of holes. This is the main theme we cover in this thesis. In particular, we develop a unique setup by use of ultraviolet pump, near-infrared probe femtosecond laser pulses, that allows for magneto-optical Kerr effect (MOKE) spectroscopy experiments. We photo-excite transient carriers in our samples, and measure the induced transient magnetization dynamics. One set of experiments performed allowed us to observe for the first time enhancement of the ferromagnetic order in GaMnAs, on an ultrafast time scale of hundreds of picoseconds. The corresponding transient increase of Curie temperature (Tc, the temperature above which a ferromagnetic material loses its permanent magnetism) of about 1 K for our experimental conditions is a very promising result for potential spintronics applications, especially since it is seconded by observation of an ultrafast ferromagnetic to paramagnetic phase transition above Tc. In a different set of experiments, we "write" the magnetization in a particular orientation in the sample plane. Using an ultrafast scheme, we alter the distribution of holes in the system and detect signatures of the particular memory state in the subsequent magnetization dynamics, with unprecedented hundreds of

  3. Prospects of high temperature ferromagnetism in (Ga, Mn)As semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Wang, K. Y.; Mašek, Jan; Edmonds, K. W.; König, J.; Sinova, J.; Polini, M.; Goncharuk, Natalya; MacDonald, A. H.; Sawicki, M.; Campion, R. P.; Zhao, L.X.; Foxon, C. T.; Gallagher, B. L.

    2005-01-01

    Roč. 72, č. 16 (2005), 165204/1-165204/13 ISSN 1098-0121 R&D Projects: GA ČR(CZ) GA202/05/0575; GA MŠk(CZ) LC510 Grant - others:EU FENIKS(XE) EC:G5RD-CT-2001-00535; EPSRC(GB) GR/S81407/01; Welch Foundation(GB) DE-FG03-02ER45958; Deutsche Forschungsgemeinschaft(DE) SFB 491 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.185, year: 2005

  4. Nonthermal Photocoercivity Effect in a Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor

    Science.gov (United States)

    Astakhov, G. V.; Hoffmann, H.; Korenev, V. L.; Kiessling, T.; Schwittek, J.; Schott, G. M.; Gould, C.; Ossau, W.; Brunner, K.; Molenkamp, L. W.

    2009-05-01

    We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

  5. Magnetization study of interlayer exchange in semiconductor EuS-PbS ferromagnetic wedge multilayers

    International Nuclear Information System (INIS)

    Kowalczyk, L.; Osinniy, V.; Chernyshova, M.; Dziawa, P.; Boratynski, A.; Story, T.; Smits, C.J.P.; Swagten, H.J.M.; Sipatov, A.Yu.; Volobuev, V.V.

    2006-01-01

    Interlayer coupling was experimentally studied in semiconductor EuS-PbS ferromagnetic superlattice wedge structures grown on KCl (0 0 1) substrates with the wedges covering the semiconductor nonmagnetic PbS spacer layer thickness from 0.3 to 6 nm. Structural parameters of the wedges were examined by X-ray diffraction analysis of EuS-PbS superlattice period. Measurements of magnetic hysteresis loops of EuS-PbS structures were performed by both SQUID (for small terminal parts of the wedge) and MOKE (magneto-optical analysis along the wedge) magnetometry. A strong decrease of magnetic remanence and an increase of saturation field observed for EuS-PbS structures with the PbS spacer thickness decreasing below about 1.5 nm is discussed in terms of the influence of antiferromagnetic interlayer coupling

  6. Spin-polarized carrier injection effect in ferromagnetic semiconductor/diffusive semiconductor/superconductor junctions

    Energy Technology Data Exchange (ETDEWEB)

    Akazaki, T [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198 Japan (Japan); Sawa, Y; Yokoyama, T; Tanaka, Y [Department of Applied Physics, Nagoya University, Nagoya, 464-8603 Japan (Japan); Golubov, A A [Faculty of Science and Technology, University of Twente, Enschede (Netherlands); Munekata, H [Image Science and Engineering Lab., Tokyo Institute of Technology, Yokohama, Kanagawa, 226-8503 Japan (Japan); Nishizawa, N; Takayanagi, H [International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 3-13 Sakura, Tsukuba, 305-0003 Japan (Japan)], E-mail: h-taka@rs.kagu.tus.ac.jp

    2009-02-01

    We study the transport properties of a p-InMnAs/n-InAs/Nb junction where a p-InMnAs can be regarded as a spin injector. Differential conductance of the n-InAs channel is measured as a function of injection current from p-InMnAs or from Nb at 20 mK. A conductance minimum appears at zero-bias voltage with no current injection. As the injection current from p-InMnAs increases, the minimum gradually disappears. This conductance behaviour is very different from that of the injection case from Nb. We also calculate the conductance in the n-InAs channel by taking account of the exchange field in the InAs channel that is induced by InMnAs ferromagnet. The difference between the conductance behaviours on injection current direction can be explained by the inverse proximity effect that the exchange field is also induced in the superconducting electrode.

  7. High-Tc superconductor applications

    International Nuclear Information System (INIS)

    Anon.

    1988-01-01

    There has been much speculation about new products and business opportunities which high-Tc superconductors might make possible. However, with the exception of one Japanese survey, there have not been any recognized forecasts suggesting a timeframe and relative economic impact for proposed high-Tc products. The purpose of this survey is to provide definitive projections of the timetable for high-Tc product development, based on the combined forecasts of the leading U.S. superconductivity experts. The FTS panel of experts on high-Tc superconductor applications, representing both business and research, forecast the commercialization and economic impact for 28 classes of electronic, magnetic, communications, instrumentation, transportation, industrial, and power generation products. In most cases, forecasts predict the occurrence of developments within a 90% statistical confidence limit of 2-to-3 years. The report provides background information on the 28 application areas, as well as other information useful for strategic planners. The panel also forecast high-Tc research spending, markets, and international competitiveness, and provide insight into how the industry will evolve

  8. Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Riahi, H., E-mail: hassenriahi1987@gmail.com [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Thevenard, L. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Maaref, M.A. [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Gallas, B. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Lemaître, A. [Laboratoire de Photonique et de Nanostructures – CNRS, Route de Nozay, 91460 Marcoussis (France); Gourdon, C [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France)

    2015-12-01

    A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO{sub 2} buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO{sub 2} layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO{sub 2}/ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO{sub 2} on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO{sub 2} and ZnO on the ferromagnetic properties of GaMnAs.

  9. Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

    International Nuclear Information System (INIS)

    Riahi, H.; Thevenard, L.; Maaref, M.A.; Gallas, B.; Lemaître, A.; Gourdon, C

    2015-01-01

    A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO 2 buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO 2 layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO 2 /ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO 2 on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO 2 and ZnO on the ferromagnetic properties of GaMnAs

  10. Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

    Energy Technology Data Exchange (ETDEWEB)

    Povzner, A.A., E-mail: a.a.povzner@urfu.ru; Volkov, A.G., E-mail: agvolkov@yandex.ru

    2017-06-15

    Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

  11. Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

    International Nuclear Information System (INIS)

    Povzner, A.A.; Volkov, A.G.

    2017-01-01

    Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

  12. Origin of ferromagnetism in diluted magnetic semiconductors; Moegliche Ursachen des Ferromagnetismus verduennter magnetischer Halbleiter

    Energy Technology Data Exchange (ETDEWEB)

    Biegger, E.

    2007-02-14

    In this work Mn-doped Ge single crystals and thin films of the metal doped oxidic semiconductors ZnO and SnO{sub 2} were prepared and investigated in detail. Structural, magnetic, and electronic properties of Mn-doped Ge single crystals (0ferromagnetic order between 150 and 285 K. X-ray absorption spectroscopy (XAS) at the Mn L{sub 2,3} absorption edge shows that Mn ions in Mn-rich and Mn-poor parts are in the divalent high-spin state. Resonant valence-band photoelectron spectroscopy (ResPES) was performed at the Mn L{sub 2,3} absorption edge for the Mn-poor region. The extracted Mn 3d partial density of states shows a low spectral weight near E{sub F} and a broad feature around 4.8 eV of binding energy which is in good agreement with Mn-rich phase. We identify Mn{sub 11}Ge{sub 8} phase segregation as the most possible origin of ferromagnetism in both Mn-rich and Mn-poor regions of the Mn{sub x}Ge{sub 1-x} samples. Further on we investigated the structural, magnetic and optical properties, as well as the electronic structure of epitaxial Me-doped ZnO and SnO{sub 2} films (Me=Co,Fe; 0.05ferromagnetic behavior at low temperature for samples prepared at oxygen-poor conditions whereas the samples prepared at oxygen-rich conditions did not show ferromagnetic behavior corroborating that ferromagnetism in Co-doped ZnO is related to oxygen-related defects. Fe-doped ZnO samples do not show ferromagnetic behaviour at all, although X-ray absorption spectroscopy (XAS) shows that Fe is present as Fe{sup 2+} and Fe{sup 3+}. XAS at the Co L{sub 2

  13. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    International Nuclear Information System (INIS)

    Stollenwerk, Tobias

    2013-09-01

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  14. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Stollenwerk, Tobias

    2013-09-15

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  15. Quasi-phase transformation in ferromagnetic semiconductors with two-charged donors

    International Nuclear Information System (INIS)

    Kovalenko, A.A.; Nagaev, Eh.L.

    1978-01-01

    Effect of term inversion of two-charged donors 1s2s → 1s 2 on properties of ferromagnetic semiconductors, has been investigated. Term inversion is accompanied by changes in local magnetic ordering in the donor area and takes place as spread phase transformation of the first type in the system of n 2 atoms, enveloped by donor 2s-orbit. It is a reason for creating not only heat capacity peak at Tsub(c), but another peak at inversion temperature Tsub(i) as well. At temperatures T > Tsub(i) introduction of external magnetic field can lead to a reverse term inversion 1s 2 → 1s2s, under that condition crystal magnetization should clearly increase. Term inversion tells upon electric properties of crystals: in Ti inversion point, the energy of conductivity activation of ungenerate semiconductors changes abruptly. In the case of larger concentrations of donors, term inversion can lead to metal-insulator transformation. Analysis of experimental data on magnetic susceptibility of EuO crystals with oxygen vacancies, shows that transformation in these crystals takes place according to a different mechanism

  16. Theory of spin-polarized transport in ferromagnet-semiconductor structures: Unified description of ballistic and diffusive transport

    International Nuclear Information System (INIS)

    Lipperheide, R.; Wille, U.

    2006-01-01

    A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. Transport inside the (nondegenerate) semiconductor is described in terms of a thermoballistic current, in which electrons move ballistically in the electric field arising from internal and external electrostatic potentials, and are thermalized at randomly distributed equilibration points. Spin relaxation is allowed to take place during the ballistic motion. For arbitrary potential profile and arbitrary values of the momentum and spin relaxation lengths, an integral equation for a spin transport function determining the spin polarization in the semiconductor is derived. For field-driven transport in a homogeneous semiconductor, the integral equation can be converted into a second-order differential equation that generalizes the spin drift-diffusion equation. The spin polarization in ferromagnet-semiconductor structures is obtained by matching the spin-resolved chemical potentials at the interfaces, with allowance for spin-selective interface resistances. Illustrative examples are considered

  17. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    Science.gov (United States)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  18. In-plane magnetic anisotropy and temperature dependence of switching field in (Ga, Mn) as ferromagnetic semiconductors.

    Science.gov (United States)

    Kamara, S; Terki, F; Dumas, R; Dehbaoui, M; Sadowski, J; Galéra, R M; Tran, Q-H; Charar, S

    2012-06-01

    We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two regions of temperature. At T Tc/2 the "zigzag-shape" signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.

  19. Biaxial stress driven tetragonal symmetry breaking and high-temperature ferromagnetic semiconductor from half-metallic CrO2

    Science.gov (United States)

    Xiao, Xiang-Bo; Liu, Bang-Gui

    2018-03-01

    It is highly desirable to combine the full spin polarization of carriers with modern semiconductor technology for spintronic applications. For this purpose, one needs good crystalline ferromagnetic (or ferrimagnetic) semiconductors with high Curie temperatures. Rutile CrO2 is a half-metallic spintronic material with Curie temperature 394 K and can have nearly full spin polarization at room temperature. Here, we find through first-principles investigation that when a biaxial compressive stress is applied on rutile CrO2, the density of states at the Fermi level decreases with the in-plane compressive strain, there is a structural phase transition to an orthorhombic phase at the strain of -5.6 % , and then appears an electronic phase transition to a semiconductor phase at -6.1 % . Further analysis shows that this structural transition, accompanying the tetragonal symmetry breaking, is induced by the stress-driven distortion and rotation of the oxygen octahedron of Cr, and the half-metal-semiconductor transition originates from the enhancement of the crystal field splitting due to the structural change. Importantly, our systematic total-energy comparison indicates the ferromagnetic Curie temperature remains almost independent of the strain, near 400 K. This biaxial stress can be realized by applying biaxial pressure or growing the CrO2 epitaxially on appropriate substrates. These results should be useful for realizing full (100%) spin polarization of controllable carriers as one uses in modern semiconductor technology.

  20. Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy

    OpenAIRE

    Acbas, G.; Kim, M. -H.; Cukr, M.; Novak, V.; Scarpulla, M. A.; Dubon, O. D.; Jungwirth, T.; Sinova, Jairo; Cerne, J.

    2009-01-01

    We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. The infrared magneto-optical effects we study arise directly from the spin-splitting of the carrier ...

  1. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: electronic structure calculations

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Kudrnovský, Josef; Máca, František; Sinova, J.; MacDonald, A. H.; Champion, R.P.; Gallagher, B. L.; Jungwirth, Tomáš

    2007-01-01

    Roč. 75, č. 4 (2007), 045202/1-045202/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/0583 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * electronic structure calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

  2. Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Winter, Andreas

    2009-07-23

    Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

  3. Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

    Science.gov (United States)

    Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

    2018-03-01

    We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

  4. Electrical detection of spin transport in lateral ferromagnet-semiconductor devices

    Science.gov (United States)

    Lou, Xiaohua

    2007-03-01

    A fully electrical scheme of spin injection, transport, and detection in a single ferromagnet-semiconductor structure has been a long-standing goal in the field of spintronics. In this talk, we report on an experimental demonstration of such a scheme. The devices are fabricated from epitaxial Fe/GaAs (100) heterostructures with highly doped GaAs as a Schottky tunnel barrier. A set of closely spaced Fe contacts on the top of an n-GaAs channel are used as spin injectors and detectors. Reference electrodes are placed at the far ends of the channel, allowing for non-local spin detection [1]. The electro-chemical potential of the detector is sensitive to the relative magnetizations of the injector and detector. In spin-valve measurements, a magnetic field is applied along the Fe easy axis to switch the relative magnetizations of injector and detector from parallel to antiparallel, resulting in a voltage jump that is proportional to the non-equilibrium spin polarization in the channel. A more rigorous test of electrical spin detection is the observation of the Hanle effect, in which an out-of-plane magnetic field is used to modulate and dephase the spin polarization in the channel. The magnitudes of the observed Hanle curves agree with the results of the spin-valve measurements. The dependence of the Hanle curves on temperature and contact separation is studied in detail and is consistent with a drift-diffusion model incorporating spin precession and relaxation. The spin polarization generated by spin injection (reverse bias at the injector) or spin accumulation (forward bias at the injector) is measured using the magneto-optical Kerr effect and is found to be in good agreement with the spin-dependent non-local voltage. Both the transport and optical measurements show a non-linear relationship between the bias voltage at the injector and the spin polarization in the channel. [1] M. Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).

  5. Fe concentration dependence of tunneling magnetoresistance in magnetic tunnel junctions using group-IV ferromagnetic semiconductor GeFe

    Directory of Open Access Journals (Sweden)

    Kosuke Takiguchi

    2017-10-01

    Full Text Available Group-IV-based ferromagnetic semiconductor Ge1−xFex (GeFe is one of the most promising materials for spin injection/detection in Si and Ge. In this paper, we demonstrate a systematic study of tunneling magnetoresistance (TMR in magnetic tunnel junctions (MTJs composed of Fe/MgO/Ge1−xFex with various Fe concentrations (x = 0.065, 0.105, 0.140, and 0.175. With increasing x, the TMR ratio increases up to 1.5% when x≤ 0.105, and it decreases when x> 0.105. This is the first observation of the TMR ratio over 1% in MTJs containing a group-IV ferromagnetic semiconductor. With increasing x, while the Curie temperature of GeFe increases, the MgO surface becomes rougher, which is thought to be the cause of the upper limit of the TMR ratio. The quality of the MgO layer on GeFe is an important factor for further improvement of TMR in Fe/MgO/GeFe MTJs.

  6. Ab initio calculations of half-metallic ferromagnetism in Cr-doped MgSe and MgTe semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Noor, N.A. [Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore (Pakistan); Alay-e-Abbas, S.M. [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan); Department of Physics, GC University Faisalabad, Allama Iqbal Road, Faisalabad 38000 (Pakistan); Sohaib, M.U. [Lahore Development Authority, 54590 Lahore (Pakistan); Ghulam Abbas, S.M. [Department of Chemistry, University of Agriculture, Faisalabad 38040 (Pakistan); Shaukat, A., E-mail: schaukat@gmail.com [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan)

    2015-01-15

    The full-potential linear-augmented-plane-waves plus local-orbitals (FP-LAPW+lo) method has been employed for investigation of half-metallic ferromagnetism in Cr-doped ordered zinc-blende MgSe and MgTe semiconductors. Calculations of exchange and correlation (XC) effects have been carried out using generalized gradient approximation (GGA) and orbital independent modified Becke–Johnson potential coupled with local (spin) density approximation (mBJLDA). The thermodynamic stability of the compounds and their preferred magnetic orders have been analyzed in terms of the heat of formation and minimum total energy difference in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering, respectively. Calculated electronic properties reveal that the Cr-doping induces ferromagnetism in MgSe and MgTe which gives rise to a half-metallic (HM) gap at Fermi level (E{sub F}). Further, the electronic band structure is discussed in terms of s (p)–d exchange constants that are consistent with typical magneto-optical experiment and the behavior of charge spin densities is presented for understanding the bonding nature. Our results demonstrate that the higher effective potential for the spin-down case is responsible for p–d exchange splitting. Total magnetic moment (mainly due to Cr-d states) of these compounds is 4µ{sub B}. Importantly, the electronic properties and HM gap obtained using mBJLDA show remarkable improvement as compared to the results obtained using standard GGA functional. - Highlights: • Spin effect theoretical study on Cr-doped MgSe and MgTe is performed. • Half-metallic ferromagnetism in Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te is established. • Results of WC-GGA and mBJLDA are compared for performance. • HM gaps for Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te show nonlinear variation with x. • Important values of exchange splitting/constants and moments are reported.

  7. Systematic study of the spin stiffness dependence on phosphorus alloying in the ferromagnetic semiconductor (Ga,Mn)As

    International Nuclear Information System (INIS)

    Shihab, S.; Thevenard, L.; Bardeleben, H. J. von; Gourdon, C.; Riahi, H.; Lemaître, A.

    2015-01-01

    We study the dependence of the spin stiffness constant on the phosphorus concentration in the ferromagnetic semiconductor (Ga,Mn)(As,P) with the aim of determining whether alloying with phosphorus is detrimental, neutral, or advantageous to the spin stiffness. Time-resolved magneto-optical experiments are carried out in thin epilayers. Laser pulses excite two perpendicular standing spin wave modes, which are exchange related. We show that the first mode is spatially uniform across the layer corresponding to a k≈0 wavevector. From the two frequencies and k-vector spacings we obtain the spin stiffness constant for different phosphorus concentrations using weak surface pinning conditions. The mode assessment is checked by comparison to the spin stiffness obtained from domain pattern analysis for samples with out-of-plane magnetization. The spin stiffness is found to exhibit little variation with phosphorus concentration in contradiction with ab-initio predictions

  8. Room temperature ferromagnetism in Fe-doped semiconductor ZrS2 single crystals

    Science.gov (United States)

    Muhammad, Zahir; Lv, Haifeng; Wu, Chuanqiang; Habib, Muhammad; Rehman, Zia ur; Khan, Rashid; Chen, Shuangming; Wu, Xiaojun; Song, Li

    2018-04-01

    Two dimensional (2D) layered magnetic materials have obtained much attention due to their intriguing properties with a potential application in the field of spintronics. Herein, room-temperature ferromagnetism with 0.2 emu g‑1 magnetic moment is realized in Fe-doped ZrS2 single crystals of millimeter size, in comparison with diamagnetic behaviour in ZrS2. The electron paramagnetic resonance spectroscopy reveals that 5.2wt% Fe-doping ZrS2 crystal exhibit high spin value of g-factor about 3.57 at room temperature also confirmed this evidence, due to the unpaired electrons created by doped Fe atoms. First principle static electronic and magnetic calculations further confirm the increased stability of long range ferromagnetic ordering and enhanced magnetic moment in Fe-doped ZrS2, originating from the Fe spin polarized electron near the Fermi level.

  9. High-Temperature Ferromagnetism in Transition Metal Implanted Wide-Bandgap Semiconductors

    Science.gov (United States)

    2005-07-01

    Mn)As and Its Heterostructures,” Acta Physica Polonica A, 94 (2):155–164 (August 1998). 79. Ohno, Y., D. K. Young, B. Beschoten, F. Matsukura, H. Ohno...reactive molecular-beam epitaxy,” Physical Review B , 67 (16):16205 (April 2003). 26. Dietl, T. “From Magnetic Polarons to Ferromagnetism,” Acta Physica ...samples,” Physica B , 308-310 :985–988 (December 2001). 15. Bradley, F. N. Materials for Magnetic Functions (First Edition). New York: Hayden, 1971. 16

  10. Ferromagnetic transition temperature enhancement in (Ga, Mn)As semiconductors by carbon codoping

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Mašek, Jan; Sinova, J.; MacDonald, A. H.

    2003-01-01

    Roč. 68, č. 16 (2003), s. 161202-1 - 161202-4 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA AV ČR IAA1010214 Institutional research plan: CEZ:AV0Z1010914 Keywords : (Ga, Mn)(As, C) semiconductors * tight-binding coherent-potential approximation * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  11. Inter-Wire Antiferromagnetic Exchange Interaction in Ni/Si-Ferromagnetic/Semiconductor Nanocomposites

    Science.gov (United States)

    Granitzer, P.; Rumpf, K.; Hofmayer, M.; Krenn, H.; Pölt, P.; Reichmann, A.; Hofer, F.

    2007-04-01

    A matrix of mesoporous silicon offering an array of quasi 1-dimensional oriented pores of high aspect ratio perpendicular to the sample surface has been produced. This porous silicon (PS) skeleton is filled with Ni in a further process-step to achieve ferromagnetic metallic nanostructures within the channels. This produced silicon based nanocomposite is compatible with state-of-the-art silicon technology. Beside the vertical magnetic surface anisotropy of this Ni-filled composite the nearly monodisperse distribution of pore diameters and its regular arrangement in a quasi 2-dimensional lattice provides novel magnetic phenomena like a depression of the magnetization curve at magnetic fields beyond 2T, which can be interpreted as a field induced antiferromagnetic exchange interaction between Ni-wires which is strongly influenced by magnetostrictive stresses at the Ni/Si-interface. 2007 American Institute of Physics

  12. Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

    Directory of Open Access Journals (Sweden)

    Isidoro Martinez

    2015-11-01

    Full Text Available We investigate the influence of an external magnetic field on the magnitude and dephasing of the transient lateral photovoltaic effect (T-LPE in lithographically patterned Co lines of widths of a few microns grown over naturally passivated p-type Si(100. The T-LPE peak-to-peak magnitude and dephasing, measured by lock-in or through the characteristic time of laser OFF exponential relaxation, exhibit a notable influence of the magnetization direction of the ferromagnetic overlayer. We show experimentally and by numerical simulations that the T-LPE magnitude is determined by the Co anisotropic magnetoresistance. On the other hand, the magnetic field dependence of the dephasing could be described by the influence of the Lorentz force acting perpendiculary to both the Co magnetization and the photocarrier drift directions. Our findings could stimulate the development of fast position sensitive detectors with magnetically tuned magnitude and phase responses.

  13. Manipulation of incoherent and coherent spin ensembles in diluted magnetic semiconductors via ferromagnetic fringe fields; Manipulation inkohaerenter und kohaerenter Spinensembles in verduennt-magnetischen Halbleitern mittels ferromagnetischer Streufelder

    Energy Technology Data Exchange (ETDEWEB)

    Halm, Simon

    2009-05-19

    In this thesis it is demonstrated that fringe fields of nanostructured ferromagnets provide the opportunity to manipulate both incoherent and coherent spin ensembles in a dilute magnetic semiconductor (DMS). Fringe fields of Fe/Tb ferromagnets with a remanent out-of-plane magnetization induce a local magnetization in a (Zn,Cd,Mn)Se DMS. Due to the sp-d exchange interaction, optically generated electron-hole pairs align their spin along the DMS magnetization. One obtains a local, remanent spin polarization which was probed by spatially resolved, polarization sensitive photoluminescence spectroscopy. Fringe fields from in-plane magnetized Co ferromagnets allow to locally modify the precession frequency of the Manganese magnetic moments of the DMS in an external magnetic field. This was probed by time-resolved Kerr rotation technique. The inhomogeneity of the fringe field leads to a shortening of the ensemble decoherence time and to the effect of a time-dependent ensemble precession frequency. (orig.)

  14. Nanomorphology Effects in Semiconductors with Native Ferromagnetism: Hierarchical Europium (II) Oxide Tubes Prepared via a Topotactic Nanostructure Transition.

    Science.gov (United States)

    Trepka, Bastian; Erler, Philipp; Selzer, Severin; Kollek, Tom; Boldt, Klaus; Fonin, Mikhail; Nowak, Ulrich; Wolf, Daniel; Lubk, Axel; Polarz, Sebastian

    2018-01-01

    Semiconductors with native ferromagnetism barely exist and defined nanostructures are almost unknown. This lack impedes the exploration of a new class of materials characterized by a direct combination of effects on the electronic system caused by quantum confinement effects with magnetism. A good example is EuO for which currently no reliable routes for nanoparticle synthesis can be established. Bottom-up approaches applicable to other oxides fail because of the labile oxidation state +II. Instead of targeting a direct synthesis, the two steps-"structure control" and "chemical transformation"-are separated. The generation of a transitional, hybrid nanophase is followed by its conversion into EuO under full conservation of all morphological features. Hierarchical EuO materials are now accessible in the shape of oriented nanodisks stacked to tubular particles. Magnetically, the coupling of either vortex or onion states has been found. An unexpected temperature dependence is governed by thermally activated transitions between these states. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure

    Science.gov (United States)

    Korenev, V. L.; Salewski, M.; Akimov, I. A.; Sapega, V. F.; Langer, L.; Kalitukha, I. V.; Debus, J.; Dzhioev, R. I.; Yakovlev, D. R.; Müller, D.; Schröder, C.; Hövel, H.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Kusrayev, Yu. G.; Bayer, M.

    2016-01-01

    Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wavefunction overlap and is therefore short-ranged, so that it may be compromised across the hybrid interface. Here we study a hybrid structure consisting of a ferromagnetic Co layer and a semiconducting CdTe quantum well, separated by a thin (Cd, Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wavefunction overlap of quantum well holes and magnetic atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 30 nm. We suggest that the resulting spin polarization of acceptor-bound holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.

  16. Investigation of ferromagnetic spinel semiconductors by hyperfine interactions of implanted nuclear probes

    CERN Document Server

    Samokhvalov, V; Dietrich, M; Schneider, F; Tiginyanu, I M; Tsurkan, V; Unterricker, S

    2003-01-01

    The semiconducting ferromagnetic spinel compounds CdCr//2Se //4, CdCr //2S//4, HgCr//2Se//4 and CuCr//2Se//4 (metallic) were investigated by the perturbed angular correlations (PAC) method with the radioactive probes **1**1**1In, **1**1**1**mCd, **1**1**1Ag, **1**1**7Cd, **1**9**9**mHg and **7**7Br. The probes were implanted at the ISOLDE on-line separator (CERN-Geneva) into single crystals. From the time dependence of the PAC spectra and the measured hyperfine interaction parameters: electric field gradient and magnetic hyperfine field, the probe positions and the thermal behavior of the probes could be determined. Cd, Ag and Hg are substituted at the A-site, In at the A- and B-site in the semiconducting compounds and Br at the anion position. Electric and magnetic hyperfine fields were used as test quantities for theoretical charge and spin density distributions of LAPW calculations (WIEN97).

  17. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  18. Molecular-beam epitaxy growth and structural characterization of semiconductor-ferromagnet heterostructures by grazing incidence X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Satapathy, D.K.

    2005-12-19

    The present work is devoted to the growth of the ferromagnetic metal MnAs on the semiconductor GaAs by molecular-beam epitaxy (MBE). The MnAs thin films are deposited on GaAs by molecular-beam epitaxy (MBE). Grazing incidence diffraction (GID) and reflection high-energy electron diffraction (RHEED) are used in situ to investigate the nucleation, evolution of strain, morphology and interfacial structure during the MBE growth. Four stages of the nucleation process during growth of MnAs on GaAs(001) are revealed by RHEED azimuthal scans. GID shows that further growth of MnAs films proceed via the formation of relaxed islands at a nominal thickness of 2.5 ML which increase in size and finally coalesce to form a continuous film. Early on, an ordered array of misfit dislocations forms at the interface releasing the misfit strain even before complete coalescence occurs. The fascinating complex nucleation process of MnAs on GaAs(0 0 1) contains elements of both Volmer-Weber and Stranski-Krastanov growth. A nonuniform strain amounting to 0.66%, along the [1 -1 0] direction and 0.54%, along the [1 1 0] direction is demonstrated from x-ray line profile analysis. A high correlation between the defects is found along the GaAs[1 1 0] direction. An extremely periodic array of misfit dislocations with a period of 4.95{+-}0.05 nm is formed at the interface along the [1 1 0] direction which releases the 7.5% of misfit. The inhomogeneous strain due to the periodic dislocations is confined at the interface within a layer of 1.6 nm thickness. The misfit along the [1 -1 0] direction is released by the formation of a coincidence site lattice. (orig.)

  19. Detection of stacking faults breaking the [110]/[110] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

    International Nuclear Information System (INIS)

    Kopecky, M.; Kub, J.; Maca, F.; Masek, J.; Pacherova, O.; Rushforth, A. W.; Gallagher, B. L.; Campion, R. P.; Novak, V.; Jungwirth, T.

    2011-01-01

    We report on high-resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults that are present in the (111) and (111) planes and absent in the (111) and (111) planes. They occupy 10 -2 %-10 -1 % of the ferromagnetic epilayer volume while no stacking faults are detected in the controlled, undoped GaAs epilayer. Full-potential density functional calculations provide additional evidence that the formation of the stacking faults is promoted by Mn attracted to these structural defects. The enhanced Mn density along the common [110] direction of the stacking fault planes produces a symmetry-breaking mechanism of a strength and sense that can account for the uniaxial [110]/[110] magnetocrystalline anisotropy of these ferromagnetic semiconductors.

  20. Mechanisms of conventional and high Tc superconductivity

    International Nuclear Information System (INIS)

    Kresin, V.L.; Morawitz, H.; Wolf, S.A.

    1993-01-01

    This book gives a careful and objective review of theories of superconductivity in traditional superconductors, organics, and high Tc cuprates. Of course, the authors do still present their own theories of cuprate superconductivity, but only in the final chapter after other possibilities have been discussed. The book should be especially useful for researchers entering the field of high Tc superconductivity. The reviews of photon mediated pairing and strong coupling theory are very welcome, since much of this material has not been reviewed since the classic 1969 volume edited by Parks. In particular the authors dispel the various myths that phonon mediated pairing leads to upper bounds on Tc. In addition to phonon mediated pairing the book discussed in detail pairing due to exchange of acoustic (demon) plasmons, excitons, or magnetic fluctuations. There have been so many diverse mechanisms based on strong correlation and large U Hubbard models that a book like this can only discuss a limited selection of the main contenders. In particular here the emphasis on Fermi liquid based models no doubt reflects the authors' own point of view. A whole chapter discusses the concepts of induced superconductivity, in the proximity effect, and its application to materials with several different electronic subsystems

  1. A novel propulsion method for high- Tc superconducting maglev vehicle

    Science.gov (United States)

    Ma, Guangtong; Wang, Jiasu; Wang, Suyu; Liu, Minxian; Jing, Hua; Lu, Yiyun; Lin, Qunxu

    2008-01-01

    High-Tc superconducting (HTS) maglev is considered as a perfect transportation type because of its unique inherent stability. A direct current (DC) linear motor using the permanent magnet guideway (PMG) as the stator and the on-board coil as the rotor instead of the present inductive or synchronous alternate current (AC) linear motor which has an economic disadvantage due to the necessity to lay primary coil along the guideway is proposed in this paper. In order to modulate the magnetic field under the PMG, an inverse E shape ferromagnetic device (IESFD) core is designed. The possible winding method for the on-board coil is listed, and the analytical result shows that a considerable net ampere force and thus the propulsion force can be generated by this special structure. The influence of the concentrated effect of the IESFD on the maglev performance of HTS bulk is studied by a numerical program, and the results show that the levitation force with the IESFD is 90% of that without. It is also indicated that the load capability and lateral performance of the maglev vehicle combined this propulsion method can be improved thanks to the attractive effect between the IESFD and PMG. The cost of the HTS maglev vehicle will be remarkably reduced and then shorten the distance to practical application with this propulsion method.

  2. Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Raju [Department of Electrical and Electronic Engineering, Shahjalal University of Science and Technology, Sylhet 3114 (Bangladesh); Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh); Moslehuddin, A.S.M.; Mahmood, Zahid Hasan [Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh); Hossain, A.K.M. Akther, E-mail: akmhossain@phy.buet.ac.bd [Department of Physics, Bangladesh University of Engineering and Technology, Dhaka 1000 (Bangladesh)

    2015-03-15

    Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

  3. AC losses in high Tc superconductors

    International Nuclear Information System (INIS)

    Campbell, A.M.

    1998-01-01

    Full text: Although in principle the AC losses in high Tc superconductors can be calculated from the critical current density, a number of complications make this difficult. The Jc is very field dependent, there are intergranular and intragranular critical currents, the material is anisotropic and there is usually a large demagnetising factor. Care must be taken in interpreting electrical measurements since the voltage depends on the position of the contacts. In spite of these complications the simple theory of Norris has proved surprisingly successful and arguments will be presented as to why this is the case. Results on a range of tapes will be compared with theory and numerical methods for predicting losses discussed. Finally a theory for coupling losses will be given for a composite conductor with high resistance barriers round the filaments

  4. Interplay of dopants and defects in making Cu doped TiO{sub 2} nanoparticle a ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Choudhury, Biswajit, E-mail: biswa.tezu@gmail.com [Department of Physics, Tezpur University, Napaam 784028, Assam (India); Choudhury, Amarjyoti [Department of Physics, Tezpur University, Napaam 784028, Assam (India); Borah, Debajit [Department of Chemical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, Assam (India)

    2015-10-15

    Here we have studied the role of oxygen defects and Cu dopants on ferromagnetism in Cu doped TiO{sub 2} nanoparticles with nominal Cu concentration of 2%, 4% and 6 mol%. Electron paramagnetic resonance (EPR) spectra analysis reveals the presence of Cu{sup 2+} in the distorted octahedral coordination of TiO{sub 2}. Cu d-states undergo strong p-d coupling with the valence band O 2p state of TiO{sub 2} resulting the extended absorption hump in the visible region. Photoluminescence results reveal the presence of oxygen defect related emission peaks in Cu doped TiO{sub 2}. Room temperature ferromagnetism is observed in all the Cu doped TiO{sub 2} nanoparticles. Saturation magnetization is the highest at 4 mol% and then there is a decrease in magnetization at 6 mol%. Ferromagnetism completely disappears on calcinations of 4% Cu doped TiO{sub 2} in air at 450 °C for 8 h. It is speculated that both oxygen vacancies and Cu d-states are involved in the room temperature ferromagnetism. Spin polarization occurs by the formation of bound magnetic polaron between electrons in Cu{sup 2+}d-states and the unpaired spins in oxygen vacancies. Presence of Cu{sup 2+}-Cu{sup 2+}d-d exchange interaction and Cu{sup 2+}-O{sup 2−}-Cu{sup 2+} antiferromagnetic superexchange interactions might have resulted in the reduction in magnetization at 6 mol% Cu. - Graphical abstract: Ferromagnetism in Cu doped TiO{sub 2} requires presence of both Cu dopant and oxygen vacancies. - Highlights: • Cu doped TiO{sub 2} nanoparticle displays room temperature ferromagnetism. • Ferromagnetism requires presence of both Cu and oxygen vacancies. • Antiferromagnetic interaction persists at high Cu dopant concentration. • Paramagnetism appears on air annealing of the doped system for longer period.

  5. High Tc superconducting energy storage systems

    Energy Technology Data Exchange (ETDEWEB)

    Werfel, Frank [Adelwitz Technologiezentrum GmbH (ATZ), Arzberg-Adelwitz (Germany)

    2012-07-01

    Electric energy is basic to heat and light our homes, to power our businesses and to transport people and goods. Powerful storage techniques like SMES, Flywheel, Super Capacitor, and Redox - Flow batteries are needed to increase the overall efficiency, stability and quality of electrical grids. High-Tc superconductors (HTS) possess superior physical and technical properties and can contribute in reducing the dissipation and losses in electric machines as motors and generators, in electric grids and transportation. The renewable energy sources as solar, wind energy and biomass will require energy storage systems even more as a key technology. We survey the physics and the technology status of superconducting flywheel energy storage (FESS) and magnetic energy storage systems (SMES) for their potential of large-scale commercialization. We report about a 10 kWh / 250 kW flywheel with magnetic stabilization of the rotor. The progress of HTS conductor science and technological engineering are basic for larger SMES developments. The performance of superconducting storage systems is reviewed and compared. We conclude that a broad range of intensive research and development in energy storage is urgently needed to produce technological options that can allow both climate stabilization and economic development.

  6. Electronic properties of high Tc superconductors

    International Nuclear Information System (INIS)

    Rojo, A.G.

    1989-01-01

    Using analytical and numerical methods, the electronic properties of the copper-oxygen plane in the normal phase of high Tc superconductors are described. Using the slave-boson technique in the saddle point, a theory of the metal insulator transition which generalizes the notions of a Mott insulator to the case of more than a single band for those planes is presented. A phase-diagram is obtained in the parameter space and effective masses, optical gaps and metallization are calculated as a function of the number of carriers. Based on the experimental evidence, the theory permits classification of superconducting compounds as charge transfer insulators in the stoichiometric case. The insulator state is characterized by a non-zero optical gap and a divergent effective mass which corresponds to the breakage of a Fermi-liquid scheme. The results obtained are applicable to metal-transition-oxides whose behaviour has been traditionally controversial and it is concluded that it is necessary to broaden the meaning of a Mott insulator to the case of more than a single band to better understand them. Based on the ideas of group renormalization in a real space, a lattice approximation is presented, which allows: a) To complement the treatment of slave-bosons in phase diagrams and optical gaps; b) Identification of an attraction mechanism between carriers originating from purely repulsive interactions. Numerical calculations in small clusters show the existence of a pairing mechanism showing a superconducting instability from a charge transfer insulator. (Author) [es

  7. A primary exploration to quasi-two-dimensional rare-earth ferromagnetic particles: holmium-doped MoS2 sheet as room-temperature magnetic semiconductor

    Science.gov (United States)

    Chen, Xi; Lin, Zheng-Zhe

    2018-05-01

    Recently, two-dimensional materials and nanoparticles with robust ferromagnetism are even of great interest to explore basic physics in nanoscale spintronics. More importantly, room-temperature magnetic semiconducting materials with high Curie temperature is essential for developing next-generation spintronic and quantum computing devices. Here, we develop a theoretical model on the basis of density functional theory calculations and the Ruderman-Kittel-Kasuya-Yoshida theory to predict the thermal stability of two-dimensional magnetic materials. Compared with other rare-earth (dysprosium (Dy) and erbium (Er)) and 3 d (copper (Cu)) impurities, holmium-doped (Ho-doped) single-layer 1H-MoS2 is proposed as promising semiconductor with robust magnetism. The calculations at the level of hybrid HSE06 functional predict a Curie temperature much higher than room temperature. Ho-doped MoS2 sheet possesses fully spin-polarized valence and conduction bands, which is a prerequisite for flexible spintronic applications.

  8. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng

    2016-06-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  9. Doping dependent room-temperature ferromagnetism and structural properties of dilute magnetic semiconductor ZnO:Cu2+ nanorods

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    Copper doped ZnO nanoparticles were synthesized by the chemical technique based on the hydrothermal method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) for different doping percentages of Cu 2+ (1-10%). TEM/SEM images showed formation of uniform nanorods, the aspect ratio of which varied with doping percentage of Cu 2+ . The wurtzite structure of ZnO gradually degrades with the increasing Cu 2+ doping concentration and an additional CuO associated diffraction peak was observed above 8% of Cu 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Cu 2+ doping concentrations was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong room-temperature ferromagnetic behavior, however at higher doping percentage of copper the ferromagnetic behavior was suppressed and paramagnetic nature was enhanced.

  10. Direct measurement of the long-range p -d exchange coupling in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure

    Science.gov (United States)

    Akimov, I. A.; Salewski, M.; Kalitukha, I. V.; Poltavtsev, S. V.; Debus, J.; Kudlacik, D.; Sapega, V. F.; Kopteva, N. E.; Kirstein, E.; Zhukov, E. A.; Yakovlev, D. R.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Korenev, V. L.; Kusrayev, Yu. G.; Bayer, M.

    2017-11-01

    The exchange interaction between magnetic ions and charge carriers in semiconductors is considered to be a prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range p -d exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10-nm-thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10 nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift ΔS on the external magnetic field B . We show that in a strong magnetic field, ΔS is a linear function of B with an offset of Δp d=50 -100 μ eV at zero field from the FM induced effective exchange field. On the other hand, the s -d exchange interaction between conduction band electrons and FM, as well as the p -d contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.

  11. Spin-polarized investigation of ferromagnetism on magnetic semiconductors MnxCa1−xS in the rock-salt phase

    International Nuclear Information System (INIS)

    Choutri, H.; Ghebouli, M.A.; Ghebouli, B.; Bouarissa, N.; Uçgun, E.; Ocak, H.Y.

    2014-01-01

    The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors Mn x Ca 1−x S in the rock-salt phase have been investigated using first-principles calculations with both LDA and LDA + U functional. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of Mn x Ca 1−x S is 4.4μ B and 4.5μ B for LDA and LDA + U functional and is independent of the Mn concentration. The unfilled Mn-3d levels reduce the local magnetic moment of Mn from its free space charge value of 5μ B –4.4μ B and4.5μ B for LDA and LDA + U functional due to 3p–3d hybridization. - Highlights: • Fundamental properties of magnetic semiconductors Mn x Ca 1−x S. • Rock-salt phase of Mn x Ca 1−x S. • Magnetic properties of the diluted magnetic semiconductors Mn x Ca 1−x S. • The use of LDA + U functionals

  12. Spin-polarized investigation of ferromagnetism on magnetic semiconductors Mn{sub x}Ca{sub 1−x}S in the rock-salt phase

    Energy Technology Data Exchange (ETDEWEB)

    Choutri, H.; Ghebouli, M.A. [LMSE Laboratory, University of Bachir Ibrahimi, 34265 Bordj-Bou-Arréridj (Algeria); Ghebouli, B. [Laboratory of Surface and Interface Studies of Solid Materials, Department of Physics, Faculty of Science, Setif University 1, Setif 19000 (Algeria); Bouarissa, N., E-mail: n_bouarissa@yahoo.fr [Department of Physics, Faculty of Science, University of M' sila, 28000 M' sila (Algeria); Uçgun, E.; Ocak, H.Y. [Department of Physics, Faculty of Arts and Sciences, Dumlupinar University, Kutahya (Turkey)

    2014-12-15

    The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors Mn{sub x}Ca{sub 1−x}S in the rock-salt phase have been investigated using first-principles calculations with both LDA and LDA + U functional. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of Mn{sub x}Ca{sub 1−x}S is 4.4μ{sub B} and 4.5μ{sub B} for LDA and LDA + U functional and is independent of the Mn concentration. The unfilled Mn-3d levels reduce the local magnetic moment of Mn from its free space charge value of 5μ{sub B}–4.4μ{sub B} and4.5μ{sub B} for LDA and LDA + U functional due to 3p–3d hybridization. - Highlights: • Fundamental properties of magnetic semiconductors Mn{sub x}Ca{sub 1−x}S. • Rock-salt phase of Mn{sub x}Ca{sub 1−x}S. • Magnetic properties of the diluted magnetic semiconductors Mn{sub x}Ca{sub 1−x}S. • The use of LDA + U functionals.

  13. The interface of the ferromagnetic metal CoS2 and the nonmagnetic semiconductor FeS2

    KAUST Repository

    Nazir, S.; Schwingenschlö gl, Udo

    2010-01-01

    semiconductor shows a metallic character. The CoS2 stays close to half-metallicity at the interface, while the FeS2 becomes metallic. The magnetic moment of the Co atoms at the interface slightly decreases as compared to the bulk value and a small moment

  14. Interchange core/shell assembly of diluted magnetic semiconductor CeO2 and ferromagnetic ferrite Fe3O4 for microwave absorption

    Directory of Open Access Journals (Sweden)

    Jiaheng Wang

    2017-05-01

    Full Text Available Core/shell-structured CeO2/Fe3O4 and Fe3O4/CeO2 nanocapsules are prepared by interchange assembly of diluted magnetic semiconductor CeO2 and ferromagnetic ferrite Fe3O4 as the core and the shell, and vice versa, using a facile two-step polar solvothermal method in order to utilize the room-temperature ferromagnetism and abundant O-vacancies in CeO2, the large natural resonance in Fe3O4, and the O-vacancy-enhanced interfacial polarization between CeO2 and Fe3O4 for new generation microwave absorbers. Comparing to Fe3O4/CeO2 nanocapsules, the CeO2/Fe3O4 nanocapsules show an improved real permittivity of 3–10% and an enhanced dielectric resonance of 1.5 times at 15.3 GHz due to the increased O-vacancy concentration in the CeO2 cores of larger grains as well as the O-vacancy-induced enhancement in interfacial polarization between the CeO2 cores and the Fe3O4 shells, respectively. Both nanocapsules exhibit relatively high permeability in the low-frequency S and C microwave bands as a result of the bi-magnetic core/shell combination of CeO2 and Fe3O4. The CeO2/Fe3O4 nanocapsules effectively enhance permittivity and permeability in the high-frequency Ku band with interfacial polarization and natural resonance at ∼15 GHz, thereby improving absorption with a large reflection loss of -28.9 dB at 15.3 GHz. Experimental and theoretical comparisons with CeO2 and Fe3O4 nanoparticles are also made.

  15. Ferromagnetism in diluted magnetic semiconductors: A comparision between AB INITIO mean-field, RPA, and Monte Carlo treatments

    Czech Academy of Sciences Publication Activity Database

    Bouzerar, G.; Kudrnovský, Josef; Bergqist, L.; Bruno, P.

    2003-01-01

    Roč. 68, č. 8 (2003), s. 081203-1 - 081203-4 ISSN 0163-1829 R&D Projects: GA AV ČR IAA1010203 Grant - others:RTN(XX) HPRN-CT-2000-00143 Institutional research plan: CEZ:AV0Z1010914 Keywords : Curie temperature * diluted magnetic semiconductors * mean-field * RPA * Monte-Carlo Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  16. Conductus makes high-Tc integrated circuit

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    This paper reports that researchers at Conductus have successfully demonstrated what the company says is the world's first integrated circuit containing active devices made from high-temperature superconductors. The circuit is a SQUID magnetometer made from seven layers of material: three layers of yttrium-barium-copper oxide, two layers of insulating material, a seed layer to create grain boundaries for the Josephson junctions, and a layer of silver for making electrical contact to the device. The chip also contains vias, or pathways that make a superconducting contact between the superconducting layers otherwise separated by insulators. Conductus had previously announced the development of a SQUID magnetometer that featured a SQUID sensor and a flux transformer manufactured on separate chips. What makes this achievement important is that the company was able to put both components on the same chip, thus creating a simple integrated circuit on a single chip. This is still a long way from conventional semiconductor technology, with as many as a million components per chip, or even the sophisticated low-Tc superconducting chips made by the Japanese, but the SQUID magnetometer demonstrates all the elements and techniques necessary to build more complex high-temperature superconductor integrated circuits, making this an important first step

  17. Electrical tuning of the band alignment and magnetoconductance in an n-type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode

    Science.gov (United States)

    Anh, Le Duc; Hai, Pham Nam; Tanaka, Masaaki

    2018-03-01

    We report a strong bias dependence of the magnetoconductance (MC) of a spin-Esaki diode composed of n+-type ferromagnetic semiconductor (FMS) (In,Fe)As and p+-type Be doped InAs grown on a p+-InAs (001) substrate by molecular beam epitaxy. When the bias voltage V is increased above 450 mV in the forward bias, we found that the MC, measured at 3.5 K under a magnetic field H of 1 T in the in-plane [110] direction, changes its sign from positive to negative and its magnitude rises rapidly from 0.5% at V fluid model, we explain both the magnitude and the anisotropy of the MC based on the evolution of the spin-Esaki diode's band profile with V. This analysis provides insights into the density of states and spin-polarization of the conduction band and the Fe-related impurity band in n-type FMS (In,Fe)As.

  18. High Tc superconducting magnetic multivibrators for fluxgate magnetic-field sensors

    International Nuclear Information System (INIS)

    Mohri, K.; Uchiyama, T.; Ozeki, A.

    1989-01-01

    Sensitive and quick-response nonlinear inductance characteristics are found for high Tc superconducting (YBa 2 Cu 3 O 7-chi ) disk cores at 77K in which soft magnetic BH hysteresis loops are observed. Various quick response magnetic devices such as modulators, amplifiers and sensors are built using these cores. The magnetizing frequency can be set to more than 20 MHz, which is difficult for conventional ferromagnetic bulk materials such as Permalloy amorphous alloys and ferrite. New quick-response fluxgate type magnetic-field sensors are made using ac and dc voltage sources. The former is used for second-harmonic type sensors, while the latter is for voltage-output multivibrator type sensors. Stable and quick-response sensor characteristics were obtained for two-core type multivibrators

  19. The interface of the ferromagnetic metal CoS2 and the nonmagnetic semiconductor FeS2

    KAUST Repository

    Nazir, S.

    2010-11-05

    The electronic and magnetic properties of the cubic pyriteCoS2/FeS2interface are studied using the all-electron full-potential linearized augmented plane wave method. We find that this contact between a ferromagneticmetal and a nonmagnetic semiconductor shows a metallic character. The CoS2 stays close to half-metallicity at the interface, while the FeS2 becomes metallic. The magnetic moment of the Co atoms at the interface slightly decreases as compared to the bulk value and a small moment is induced on the Fe atoms. Furthermore, at the interfaceferromagnetic ordering is found to be energetically favorable as compared to antiferromagnetic ordering.

  20. Electrical memory features of ferromagnetic CoFeAlSi nano-particles embedded in metal-oxide-semiconductor matrix

    International Nuclear Information System (INIS)

    Lee, Ja Bin; Kim, Ki Woong; Lee, Jun Seok; An, Gwang Guk; Hong, Jin Pyo

    2011-01-01

    Half-metallic Heusler material Co 2 FeAl 0.5 Si 0.5 (CFAS) nano-particles (NPs) embedded in metal-oxide-semiconductor (MOS) structures with thin HfO 2 tunneling and MgO control oxides were investigated. The CFAS NPs were prepared by rapid thermal annealing. The formation of well-controlled CFAS NPs on thin HfO 2 tunneling oxide was confirmed by atomic force microscopy (AFM). Memory characteristics of CFAS NPs in MOS devices exhibited a large memory window of 4.65 V, as well as good retention and endurance times of 10 5 cycles and 10 9 s, respectively, demonstrating the potential of CFAS NPs as promising candidates for use in charge storage.

  1. Rugged Low-Resistance Contacts To High-Tc Superconductors

    Science.gov (United States)

    Caton, Randall; Selim, Raouf; Byvik, Charles E.; Buoncristiani, A. Martin

    1992-01-01

    Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.

  2. The Goettingen high-Tc superconductivity research pool: the effects of structure and structural defects on the performance of high-Tc superconductors. Final reports

    International Nuclear Information System (INIS)

    1992-02-01

    The compilation presents the final reports prepared by the various teams of the Goettingen research pool for high-Tc superconductivity. The reports are entitled: Structure and phase transition in high-Tc superconductors (Krebs/Freyhardt). Preparation and critical properties of high-Tc superconductors (Freyhardt/Heinemann/Zimmermann). EMC measurements in high-Tc superconductors (Bormann/Noelting). Phase analysis of the various phases observed in the preparation of high-Tc superconductors (Faupel/Hehenkamp). Positron annihilation in high-Tc superconductors (Hehenkamp). Preparation and characterization of thin films consisting of superconducting oxide ceramics (v. Minnigerode/Samwer). High-Tc superconductivity in monocrystals (Winzer/Beuermann). Microwave conductivity in high-Tc superconductors (Helberg). High-resolution structural analyses in high-Tc superconductors (Kupcik/Bente). Synthesis, structural analyses and spectroscopy of high-Tc superconductors (Bente). Synthesis, monocrystal growing, crystal structure of high-Tc superconductors (Schwarzmann). Ion-beam-aided studies in high-Tc superconductors (Uhrmacher). (orig./MM) [de

  3. Rapid solidification for preparation of high Tc superconductors

    International Nuclear Information System (INIS)

    Yavari, A.R.

    1988-01-01

    High Tc superconducting oxides are prepared in two different ways using rapid solidification: by oxidation of microcrystalline or amorphous tapes obtained by quenching the liquid alloy and via crystallisation of the amorphous oxide obtained by rapid quenching of the oxide melt. This technique is applied for the first time to the BiCaSrCuO family [fr

  4. Pinning and creep in high-Tc superconductors

    International Nuclear Information System (INIS)

    Ovchinnikov, Yu.N.; Ivlev, B.I.

    1992-01-01

    The angular and magnetic field dependence of a critical current parallel to the layers in the layered superconductors is studied. The critical current value is found for a superconductor with strong pinning centers. Quantum flux creep in sufficiently perfect layered high-Tc superconductors is discussed. The cross-over temperature between activated and quantum creep is found. (orig.)

  5. Temperature profile evolution in quenching high-Tc ...

    Indian Academy of Sciences (India)

    Abstract. Irreversible normal zones leading to quench is an important aspect of high-temperature superconductors (HTS) in all practical applications. As a consequence of quench, transport current gets diverted to the matrix stabilizer material of the high-Tc composite and causes Joule heating till the original conditions are ...

  6. Oxygen stoichiometry and the high Tc superconducting oxides

    International Nuclear Information System (INIS)

    Tarascon, J.M.; Bagley, B.G.

    1989-01-01

    Methods for determining the oxygen content in high Tc materials, such as thermogravimetric analysis and chemical analysis, are discussed. Consideration is given to La-based cuprates, Y-based cuprates, and Bi-based cuprates. Superconducting transition temperatures are analyzed as a function of the Cu(1)-O(4) bond lengths for several different compositions in the Y-based system. 28 references

  7. Critical current of high Tc superconducting Bi223/Ag tapes

    NARCIS (Netherlands)

    Huang, Y.; ten Haken, Bernard; ten Kate, Herman H.J.

    1998-01-01

    The magnetic field dependence of the critical current of various high Tc superconducting Bi2223/Ag tapes indicates that the transport current is carried through two paths: one is through weakly-linked grain boundaries (Josephson junctions); another is through well-connected grains. The critical

  8. Phenomenological Theory for Pseudogap States in High Tc Cuprate

    Directory of Open Access Journals (Sweden)

    Zhang Fuchun

    2012-03-01

    Full Text Available Pseudogap phase in the underdoped region of high-Tc cuprate is one of the challenging issues in condensed matter physics. In this talk, I will describe a phenomenological theory for this phase, based on analogies to the approach to Mott localization at weak coupling in lower dimensional systems. I will make comparisons of the theory to a series of the experiments, including angle resolved photoemission spectroscope, scanning tunneling microscope.

  9. Quantum Monte Carlo simulations for high-Tc superconductors

    International Nuclear Information System (INIS)

    Muramatsu, A.; Dopf, G.; Wagner, J.; Dieterich, P.; Hanke, W.

    1992-01-01

    Quantum Monte Carlo simulations for a multi-band model of high-Tc superconductors are reviewed with special emphasis on the comparison of different observabels with experiments. It is shown that a give parameter set of the three-band Hubbard model leads to a consistent description of normal-state propteries as well as pairing correlation function for the copper-oxide superconductors as a function of doping and temperature. (orig.)

  10. Electronic properties of high-Tc superconductors. The normal and the superconducting state of high-Tc materials. Proceedings

    International Nuclear Information System (INIS)

    Kuzmany, H.; Mehring, M.; Fink, J.

    1993-01-01

    The International Winter School on Electronic Properties of High-Temperature Superconductors, held between March 7-14, 1992, in Kirchberg, (Tyrol) Austria, was the sixth in a series of meetings to be held at this venue. Four of the earlier meetings were dedicated to issues in the field of conducting polymers, while the winter school held in 1990 was devoted to the new discipline of high-Tc superconductivity. This year's meeting constituted a forum not only for the large number of scientists engaged in high-Tc research, but also for those involved in the new and exciting field of fullerenes. Many of the issues raised during the earlier winter schools on conducting polymers, and the last one on high-Tc superconductivity, have taken on a new significance in the light of the discovery of superconducting C 60 materials. The Kirchberg meetings are organized in the style of a school where experienced scientists from universities, research laboratories and industry have the opportunity to discuss their most recent results, and where students and young scientists can learn about the present status of research and applications from some of the most eminent workers in their field. In common with the previous winter school on high-Tc superconductors, the present one focused on the electronic properties of the cuprate superconductors. In addition, consideration was given to related compounds which are relevant to the understanding of the electronic structure of the cuprates in the normal state, to other oxide superconductors and to fulleride superconductors. Contributions dealing with their preparation, transport and thermal properties, high-energy spectroscopies, nuclear magnetic resonance, inelastic neutron scattering, and optical spectroscopy are presented in this volume. The theory of the normal and superconducting states also occupies a central position. (orig.)

  11. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng; Xia, Chuan; Zhu, Zhiyong; Wen, Yan; Zhang, Qiang; Alshareef, Husam N.; Zhang, Xixiang

    2016-01-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin

  12. Bi-Polaron Condensation in High Tc Superconductors

    International Nuclear Information System (INIS)

    Ranninger, J.

    1995-01-01

    On the basis of optical measurements-, photoemission-, EXAFS- and neutron scattering-experiments we conclude that itinerant valence electrons coexist with localized bi-polarons.Entering the metallic phase upon chemical doping, a charge transfer between the two electronic subsystems is triggered off. We show that as the temperature is lowered towards Tc this process leads to a delocalization of bi-polarons due to a precursor effect of superfluidity of those bi-polarons. Upon entering the superconducting phase, these bipolarons ultimately condense into a superfluid state which is expected to largely determine the superconducting properties of high Tc materials. (authors)

  13. On the superconducting phase diagram of high Tc superconductors

    International Nuclear Information System (INIS)

    de la Cruz, F.

    1990-01-01

    The tendency of oxide superconductors to show granularity has been pointed out since the beginning of research on superconductivity in this type of materials. Nevertheless, only very recently the full phase diagram and characteristics of the grains have been determined. In this paper, the authors review and discuss the different critical fields and their relation to the transport of superconducting current. The superconducting response of single crystals of High Tc superconductors is discussed. Special attention is devoted to the behavior of the vortex lattice and, in particular, to the recent discovery of the quenching of H c1 in YBaCuO, several degrees below Tc

  14. The exponential critical state of high-Tc ceramics

    International Nuclear Information System (INIS)

    Castro, H.; Rinderer, L.

    1994-01-01

    The critical current in high-Tc materials is strongly reduced by a magnetic field. We studied this dependency for tubular YBCO samples. We find an exponential drop as the field is increased from zero up to some tens of oersted. This behavior was already observed by others, however little work has been done in this direction. We define what we call the ''exponential critical state'' of HTSC and compare the prediction for the magnetization with experimental data. Furthermore, the ''Kim critical state'' is obtained as the small field limit. (orig.)

  15. Pressure and high-Tc superconductivity in sulfur hydrides.

    Science.gov (United States)

    Gor'kov, Lev P; Kresin, Vladimir Z

    2016-05-11

    The paper discusses fundamentals of record-TC superconductivity discovered under high pressure in sulfur hydride. The rapid increase of TC with pressure in the vicinity of Pcr ≈ 123GPa is interpreted as the fingerprint of a first-order structural transition. Based on the cubic symmetry of the high-TC phase, it is argued that the lower-TC phase has a different periodicity, possibly related to an instability with a commensurate structural vector. In addition to the acoustic branches, the phonon spectrum of H3S contains hydrogen modes with much higher frequencies. Because of the complex spectrum, usual methods of calculating TC are here inapplicable. A modified approach is formulated and shown to provide realistic values for TC and to determine the relative contributions of optical and acoustic branches. The isotope effect (change of TC upon Deuterium for Hydrogen substitution) originates from high frequency phonons and differs in the two phases. The decrease of TC following its maximum in the high-TC phase is a sign of intermixing with pairing at hole-like pockets which arise in the energy spectrum of the cubic phase at the structural transition. On-pockets pairing leads to the appearance of a second gap and is remarkable for its non-adiabatic regime: hydrogen mode frequencies are comparable to the Fermi energy.

  16. Magnetically-related properties of bismuth containing high Tc superconductors

    Science.gov (United States)

    Vezzoli, Gary C.; Chen, M. F.; Craver, F.; Safari, A.; Moon, B. M.; Lalevic, B.; Burke, Terence; Shoga, M.

    1990-08-01

    The effect of magnetic fields to 15 T on electrical resistance has been measured for the BiSrCaCuO superconductor at precise temperatures during the transition to the superconducting state from pre-onset conditions to essentially zero resistance conditions. The results show that the temperature at which the magnetic field causes a divergence in the resistance versus 1000/ T curve is approximately the same temperature as the value at which, during cooling, the positive Hall coefficient begins its abrupt descent to zero. This temperature gives the best measure of Tc. It is also shown that small oscillations of low frequency start near onset conditions, the amplitude of which at a given temperature is B-field dependent. Additionally, Hall effect studies as a function of temperature at 4 T in three separate experiments (including high Tc BiSrCaCu PbO of > 90% theoretical density) show that sharp delta-function-like peaks in + RH are observed near Tc and are superimposed on a broader maximum. The Hall data are explicable in terms of exciton formation and ionization. The bound holes associated with these excitons are believed to be the mediators producing Cooper-pairing, and scale very well with Tc for all the known high Tc oxides.

  17. A novel propulsion method for high-Tc superconducting maglev vehicle

    International Nuclear Information System (INIS)

    Ma Guangtong; Wang Jiasu; Wang Suyu; Liu Minxian; Jing Hua; Lu Yiyun; Lin Qunxu

    2008-01-01

    High-Tc superconducting (HTS) maglev is considered as a perfect transportation type because of its unique inherent stability. A direct current (DC) linear motor using the permanent magnet guideway (PMG) as the stator and the on-board coil as the rotor instead of the present inductive or synchronous alternate current (AC) linear motor which has an economic disadvantage due to the necessity to lay primary coil along the guideway is proposed in this paper. In order to modulate the magnetic field under the PMG, an inverse E shape ferromagnetic device (IESFD) core is designed. The possible winding method for the on-board coil is listed, and the analytical result shows that a considerable net ampere force and thus the propulsion force can be generated by this special structure. The influence of the concentrated effect of the IESFD on the maglev performance of HTS bulk is studied by a numerical program, and the results show that the levitation force with the IESFD is 90% of that without. It is also indicated that the load capability and lateral performance of the maglev vehicle combined this propulsion method can be improved thanks to the attractive effect between the IESFD and PMG. The cost of the HTS maglev vehicle will be remarkably reduced and then shorten the distance to practical application with this propulsion method

  18. Carbon-based superconductors towards high-Tc superconductivity

    CERN Document Server

    Haruyama, Junji

    2014-01-01

    Introduction of Condensed Matter Physics; Spin-state Crossover; Li Ion Battery; Huge Thermoelectric Power; Room-temperature Ferromagnetism; Partially Disordered Antiferromagnetic Transition; Superconductivity; Transport Properties Combined with Charge, Spin, and Orbital; Magnetoresistance and Spin Blocade; Intrinsic Inhomogeneity; Move/diffuse and Charge/discharge Effect.

  19. Molecular ferromagnetism

    International Nuclear Information System (INIS)

    Epstein, A.J.

    1990-01-01

    This past year has been one of substantial advancement in both the physics and chemistry of molecular and polymeric ferromagnets. The specific heat studies of (DMeFc)(TCNE) have revealed a cusp at the three-dimensional ferromagnetic transition temperature with a crossover to primarily 1-D behavior at higher temperatures. This paper discusses these studies

  20. Mechanical considerations in the processing of high Tc superconductors

    International Nuclear Information System (INIS)

    Wright, R.N.; German, R.M.; Knorr, D.B.; Maccrone, R.K.; Rajan, K.

    1990-01-01

    This paper presents a brief review of deformation processing concepts germane to high-Tc superconductor processing, and illustrates some available techniques with results from recent work. It is noted that YBa2Cu3O(7-x) powder/binder cold extrusion technique is quite sensitive to binder formulation and processing conditions. With appropriate technique, indefinite lengths of YBa2Cu3O(7-x) powder/binder composite can be extruded with sufficient workability to allow coiling and other forming operations. With heat treatment, the resulting prototype wire is electrically continuous and manifests critical current densities of a few hundred A/sq cm. The hot extrusion of YBa2Cu3O(7-x) powder results in a modest, but favorable, development of a texture involving preferential rotation of the c-axis toward the radial direction. Billet designs involving larger powder charge diameters, and thinner container walls, produce the favorable texture. Unfortunately, such billet designs reduce workability. 29 refs

  1. Processing and critical currents of high-Tc superconductor wires

    International Nuclear Information System (INIS)

    Krauth, H.; Heine, K.; Tenbrink, J.

    1991-01-01

    High-Tc superconductors are expected to have a major impact on magnet and energy technology. For technical applications they have to fulfill the requirement of carrying sufficient current at a critical current density of the order of 10 5 A/cm 2 at operating temperature and magnetic field. At 77 K these values have not been achieved yet in bulk material or wires due to weak link problems and flux creep effects. Progress made so far and remaining problems will be discussed in detail concentrating on problems concerning development of technical wires. In Bi-based materials technically interesting critical current densities could be achieved at 4.2 K in fields above 20 T (1,2), rendering possible the use of such material for very high field application. (orig.)

  2. High-Tc Superconductors Based on FeAs Compounds

    CERN Document Server

    Izyumov, Yuri

    2010-01-01

    Physical properties and models of electronic structure are analyzed for a new class of high-TC superconductors which belong to iron-based layered compounds. Despite their variable chemical composition and differences in the crystal structure, these compounds possess similar physical characteristics, due to electron carriers in the FeAs layers and the interaction of these carriers with fluctuations of the magnetic order. A tremendous interest towards these materials is explained by the prospects of their practical use. In this monograph, a full picture of the formation of physical properties of these materials, in the context of existing theory models and electron structure studies, is given. The book is aimed at a broad circle of readers: physicists who study electronic properties of the FeAs compounds, chemists who synthesize them and specialists in the field of electronic structure calculations in solids. It is helpful not only to researchers active in the fields of superconductivity and magnetism, but also...

  3. Orbitals, correlation, valencies in high-Tc superconductors

    International Nuclear Information System (INIS)

    Khomskii, D.I.

    1990-09-01

    The survey is given of certain properties of high-Tc superconductors connected with the details of their electronic structure such as the kind of orbitals involved and the degree of correlation. Special attention is paid to the properties of cuprates at high doping level. The problem whether there exists a ''Mott transition'' at high electron or a hole concentration is discussed. We also discuss physical factors (d-p Coulomb interaction, orbital mixing) leading to the partial occupation of copper d x 2 -orbital. In particular we show that in localized picture (x 2 -y 2 ) and z 2 -levels in La 2-x Sr x CuO 4 may cross at x approx. 0.4 which may be responsible for a marked change of many properties at this doping. The possible role of x 2 -electrons in pairing is discussed in connection with some recent experiments. (author). 28 refs, 6 figs, 1 tab

  4. Bec Model of HIGH-Tc Superconductivity in Layered Cuprates

    Science.gov (United States)

    Lomnitz, M.; Villarreal, C.; de Llano, M.

    2013-11-01

    High-Tc superconductivity in layered cuprates is described in a BCS-BEC formalism with linearly-dispersive s- and d-wave Cooper pairs moving in quasi-2D finite-width layers around the CuO2 planes. This yields a closed formula for Tc involving the layer width, the Debye frequency, the pairing energy and the in-plane penetration depth. The new formula has no free parameters and reasonably reproduces empirical values of superconducting Tcs for 11 different layered superconductors over a wide doping regime including YBCO itself as well as other compounds like LSCO, BSCCO and TBCCO. In agreement with the London formalism, the formula also yields a fair description of the Tc dependence of the lower critical magnetic field in highly underdoped YBCO.

  5. International Discussion Meeting on High-Tc Superconductors

    CERN Document Server

    1988-01-01

    In the past two years conferences on superconductivity have been characterized by the attendance of hundreds of scientists. Consequently, the organizers were forced to schedule numerous parallel sessions and poster presentations with an almost unsurveyable amount of information. It was, therefore, felt that a more informal get-together, providing ample time for a thourough discussion of some topics of current interest in high-temperature superconductivity, was timely and benefitial for leading scientists as well as for newcomers in the field. The present volume contains the majority of papers presented at the International Discussion Meeting on High-Tc Superconductors held at the Mauterndorf Castle in the Austrian Alps from February 7 to 11, 1988. Each subject was introduced in review form by a few invited speakers and then discussed together with the contributed poster presentations. These discussion sessions chaired by selected scientists turned out to be the highlights of the meeting, not only because all ...

  6. High-Tc superconducting antenna-coupled microbolometer on silicon

    Science.gov (United States)

    Rice, Joseph P.; Grossman, Erich N.; Borcherdt, L. J.; Rudman, D. A.

    1994-05-01

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Tc superconductor YBa2Cu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 X 10-6 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 microsecond(s) , a responsivity of the 1000 V/W range, and a noise-equivalent power in the 10-12 W/Hz1/2 range at 1000 Hz.

  7. High-{Tc} superconducting antenna-coupled microbolometer on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Rice, J.P.; Grossman, E.N.; Borcherdt, L.J.; Rudman, D.A. [National Inst. of Standards and Technology, Boulder, CO (United States). Cryoelectronic Metrology Group

    1994-12-31

    A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-{Tc} superconductor YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 {times} 10{sup {minus}6} W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 {micro}s, a responsivity in the 1,000 V/W range, and a noise-equivalent power (NEP) in the 10{sup {minus}12} W/Hz{sup 1/2} range at 1,000 Hz.

  8. Towards a complete Fermi surface in underdoped high Tc superconductors

    Science.gov (United States)

    Harrison, Neil

    The discovery of magnetic quantum oscillations in underdoped high Tc superconductors raised many questions, and initiated a quest to understand the origin of the Fermi surface the like of which had not been seen since the very first discovery of quantum oscillations in elemental bismuth. While studies of the Fermi surface of materials are today mostly assisted by computer codes for calculating the electronic band structure, this was not the case in the underdoped high Tc materials. The Fermi surface was shown to reconstructed into small pockets, yet there was no hint of a viable order parameter. Crucial clues to understanding the origin of the Fermi surface were provided by the small value of the observed Fermi surface cross-section, the negative Hall coefficient and the small electronic heat capacity at high magnetic fields. We also know that the magnetic fields were likely to be too weak to destroy the pseudogap and that vortex pinning effects could be seen to persist to high magnetic fields at low temperatures. I will show that the Fermi surface that appears to fit best with the experimental observations is a small electron pocket formed by connecting the nodal `Fermi arcs' seen in photoemission experiments, corresponding to a density-wave state with two different orthogonal ordering vectors. The existence of such order has subsequently been detected by x-ray scattering experiments, thereby strengthening the case for charge ordering being responsible for reconstructing the Fermi surface. I will discuss new efforts to understand the relationship between the charge ordering and the pseudogap state, discussing the fate of the quasiparticles in the antinodal region and the dimensionality of the Fermi surface. The author acknowledges contributions from Suchitra Sebastian, Brad Ramshaw, Mun Chan, Yu-Te Hsu, Mate Hartstein, Gil Lonzarich, Beng Tan, Arkady Shekhter, Fedor Balakirev, Ross McDonald, Jon Betts, Moaz Altarawneh, Zengwei Zhu, Chuck Mielke, James Day, Doug

  9. Magnetic levitation systems using a high-Tc superconducting bulk magnet

    Energy Technology Data Exchange (ETDEWEB)

    Ohsaki, Hiroyuki [Dept. of Electrical Engineering, Univ. of Tokyo (Japan); Kitahara, Hirotaka [Dept. of Electrical Engineering, Univ. of Tokyo (Japan); Masada, Eisuke [Dept. of Electrical Engineering, Univ. of Tokyo (Japan)

    1996-12-31

    Recent development of high-performance high-Tc bulk superconductors is making their application for electromagnetic force use feasible. We have studied electromagnetic levitation systems using high-Tc bulk superconducting material. In this paper, after an overview of superconducting magnetic levitation systems, with an emphasis on high-Tc bulk superconductor applications, experimental results of a high-Tc bulk EMS levitation and FEM analysis results of magnetic gradient levitation using bulk superconductor are described. Problems to be solved for their application are also discussed. (orig.)

  10. High-Tc superconducting microbolometer for terahertz applications

    Science.gov (United States)

    Ulysse, C.; Gaugue, A.; Adam, A.; Kreisler, A. J.; Villégier, J.-C.; Thomassin, J.-L.

    2002-05-01

    Superconducting hot electron bolometer mixers are now a competitive alternative to Schottky diode mixers in the terahertz frequency range because of their ultra wideband (from millimeter waves to visible light), high conversion gain, and low intrinsic noise level. High Tc superconductor materials can be used to make hot electron bolometers and present some advantage in term of operating temperature and cooling. In this paper, we present first a model for the study of superconducting hot electron bolometers responsivity in direct detection mode, in order to establish a firm basis for the design of future THz mixers. Secondly, an original process to realize YBaCuO hot electron bolometer mixers will be described. Submicron YBaCuO superconducting structures are expitaxially sputter deposited on MgO substrates and patterned by using electron beam lithography in combination with optical lithography. Metal masks achieved by electron beam lithography are insuring a good bridge definition and protection during ion etching. Finally, detection experiments are being performed with a laser at 850 nm wavelength, in homodyne mode in order to prove the feasibility and potential performances of these devices.

  11. Non-equilibrium spectroscopy of high-Tc superconductors

    International Nuclear Information System (INIS)

    Krasnov, V M

    2009-01-01

    In superconductors, recombination of two non-equilibrium quasiparticles into a Cooper pair results in emission of excitation that mediates superconductivity. This is the basis of the proposed new type of 'non-equilibrium' spectroscopy of high T c superconductors, which may open a possibility for direct and unambiguous determination of the coupling mechanism of high T c superconductivity. In case of low T c superconductors, the feasibility of such the non-equilibrium spectroscopy was demonstrated in classical phonon generation-detection experiments almost four decades ago. Recently it was demonstrated that a similar technique can be used for high T c superconductors, using natural intrinsic Josephson junctions both for injection of non-equilibrium quasiparticles and for detection of the non-equilibrium radiation. Here I analyze theoretically non-equilibrium phenomena in intrinsic Josephson junctions. It is shown that extreme non-equilibrium state can be achieved at bias equal to integer number of the gap voltage, which can lead to laser-like emission from the stack. I argue that identification of the boson type, constituting this non-equilibrium radiation would unambiguously reveal the coupling mechanism of high Tc superconductors.

  12. Mechanochemical effects on high-Tc superconductor powders

    International Nuclear Information System (INIS)

    Yamada, Taichi; Nagai, Ryoji; Takeuchi, Manabu; Minehara, Eisuke.

    1991-03-01

    We have investigated the mechanochemical effects on high-Tc superconductor (YBa 2 Cu 3 O 7 -δ) powders. The powder was mechanically ground in air using an agate mortar with a pestle. The grinding time was varied from 2 to 100 min. The mean particle sizes of the powders were measured by a sedimentation method. The degradation of superconductivity was evaluated by the measurements of the crystallinity and volume fraction of the superconducting phase. The crystallinity was estimated from X-ray diffraction patterns. The volume fraction of the superconducting phase was estimated from the diamagnetization. The results of these changes of 2 min. and 100 min. grinding are respectively as follows; 1) mean particle size: 10.8 μm and 7.2 μm, 2) crystallinity: 40.0 % and 24.8 %, 3) volume fraction of superconducting phase: 91.5 % and 30.0 %. Recovery of the crystallinity and superconductivity of the ground specimens by re-sintering and re-annealing was also studied. It was found that the recovery of both of the characteristics was not complete. (author)

  13. On the application of High-Tc superconductors in power coils and transformers

    NARCIS (Netherlands)

    Chevtchenko, O.A.

    2002-01-01

    In this study, the electro-magnetic properties of high-Tc tapes and coils are investigated. The focus is on Bi-2223/Ag tapes with non-twisted superconducting filaments as these are the only high-Tc superconductors at present available in sufficient length for practical applications. The study is

  14. Normal state Raman spectra of high-Tc cuprates

    International Nuclear Information System (INIS)

    Bishoyi, K.C.; Rout, G.C.; Behera, S.N.

    2003-01-01

    We present a microscopic theory to explain Raman spectra of high-T c cuprates R 2-x M x CuO 4 in the normal state. We used electronic Hamiltonian prescribed by Fulde in presence of anti-ferromagnetism. Phonon interaction to the hybridization between the conduction electrons of the system and the f-electrons has been incorporated in the calculation. The phonon spectral density is calculated by the Green function technique of Zubarev at zero wave vector and finite (room) temperature limit. Parameter dependence of Raman active phonon frequencies are studied by varying model parameters of the system i.e. the position of f-level (ε f ), the effective electron-phonon coupling strength (g), the staggered magnetic field (h 1 ), and the hybridization parameter (v). The four Raman active peaks (P 1 to P 4 ) represent the electronic states of the atomic sub-systems of the cuprate systems. They show up as phonon excitations due to the coupling of the phonon to the electrons and the anti-ferromagnetic gap. (author)

  15. Probe high-Tc Superconductors by neutron scattering

    International Nuclear Information System (INIS)

    Fauque, B.

    2007-10-01

    This research thesis explores two aspects of the phase diagram of high critical temperature superconductors: the evolution of AF correlations and the nature of the pseudo-gap phase. The author presents the problematic associated with these particular semiconductors, describes the neutron diffusion probe used in this study, and presents the three families of semiconductors investigated during this research: Bi 2 Sr 2 CaCu 2 O 8+x , YBa 2 Cu 3 O 6+x and La 2-x Sr x CuO 4 . He reports the results of the investigation of the spin dynamics in the Bi 2 Sr 2 CaCu 2 O 8+x . He reports a detailed investigation of the magnetic cross section associated with different types of non conventional magnetic orders proposed as candidates for the pseudo-gap phase. He reports and comments the results obtained for the pseudo-gap phase for the YBa 2 Cu 3 O 6+x and La 2-x Sr x CuO 4 families. Finally, the author discusses the consequences of the obtained results for the description of the diagram phase of high critical temperature semiconductors

  16. Neutron depolarization effects in a high-Tc superconductor (abstract)

    Science.gov (United States)

    Nunes, A. C.; Pickart, S. J.; Crow, L.; Goyette, R.; McGuire, T. R.; Shinde, S.; Shaw, T. M.

    1988-11-01

    Using the polarized beam small-angle neutron scattering spectrometer at the Rhode Island Nuclear Science Center Reactor, we have observed significant depolarization of a neutron beam by passage through polycrystalline high-Tc superconductors, specifically 123 Y-Ba-Cu-O prepared and characterized at the IBM Watson Research Center. We believe that this technique will prove useful in studying aspects of these materials, such as the penetration depth of shielding currents, the presence and structure of trapped flux vortices, and grain size effects on the supercurrent distribution in polycrystalline samples. The two samples showed sharp transitions at 87 and 89 K, and have been studied at temperatures of 77 K; the second sample has also been studied at 4 K. The transition to the superconducting state was monitored by the shift in resonant frequency of a coil surrounding the sample. No measurable depolarization was observed in either sample at 77 K in both the field-cooled and zero-field-cooled states, using applied fields of 0 (nominal), 54, and 1400 Oe. This negative result may be connected with the fact that the material is still in the reversible region as indicated by susceptibility measurements, but it allows an estimate of the upper bound of possible inhomogeneous internal fields, assuming a distance scale for the superconducting regions. For the 10-μm grain size suggested by photomicrographs, this upper bound for the field turns out to be 1.2 kOe, which seems reasonable. At 4 K a significant depolarization was observed when the sample was cooled in low fields and a field of 1400 Oe was subsequently applied. This result suggests that flux lines are penetrating the sample. Further investigations are being carried out to determine the field and temperature dependence of the depolarization, and attempts will be made to model it quantitatively in terms of possible internal field distributions. We are also searching for possible diffraction effects from ordered vortex

  17. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  18. Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

    Science.gov (United States)

    Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

    2016-04-01

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  19. EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

    Science.gov (United States)

    Chambers, Scott A.; Gallagher, Bryan

    2008-05-01

    -orbit coupling. They have also led to the demonstration of a wide range of novel phenomena including some, like tunneling anisotropic magnetoresistance, which have subsequently been achieved in metal ferromagnetic systems. However despite considerable effort over many years the maximum Curie point achieved in (Ga,Mn)As is still less than 200 K. So unless some major new breakthrough is achieved these materials are unlikely to be of use for practical spin electronics technologies. In 2000, Dietl et al [1] published a seminal paper in which mean field theory was used to predict which of the common diamagnetic semiconductors would exhibit a Curie point above ambient if doped with 5 at.% Mn and a hole concentration of 3.5 × 1020 cm-3. Of the many host semiconductors simulated, only ZnO and GaN were predicted to exhibit a critical temperature in excess of 300 K. Since 2000, high-Tc DMS research has proliferated in both experimental and theoretical arenas. Many papers have been published containing claims of new DMS materials based largely on limited film growth, powder diffraction, and magnetometry. In these papers, a film which exhibits a hysteretic SQUID or VSM loop at 300 K and phase purity with only the host semiconductor detected by XRD are often claimed to be true ferromagnetic DMSs. Many of these papers are flawed because the criteria for a well-defined DMS are much more extensive. These include: (i) a random dopant distribution, (ii) a well-known and preferably unique charge state and preferentially a unique local structural environment for the dopant, (iii) a demonstrated coupling of the dopant spin to the host band structure, leading to spin polarization of the majority carriers, and (iv) a rational dependence of the saturation magnetization and Curie point on the magnetic dopant and carrier concentrations. Implicit in this list is that trivial causes of ferromagnetism, such as magnetic contamination and magnetic secondary phase formation, are eliminated. Yet, in many

  20. Olson sees how they conduct (High Tc superconductors)

    International Nuclear Information System (INIS)

    Olson, C.

    1989-01-01

    Thanks to Cliff Olson's synchrotron radiation measurements of the surface of several of the new high-temperature superconducting materials, these ceramic-like crystals can now be classified as metals. This means their electronic band structure meets the criteria for a metal or conductor, rather than those of an insulator, or of a semiconductor. Working with graduate assistant Liu, Olson has now measured the energy gap in crystals of a bismuth-strontium-calcium-copper oxide with a 100K or 300K transition temperature. They determined that the superconductivity gap is isotropic, or independent of direction within the layer. This is significant, because the high temperature materials are all anisotropic, layered in flat sheets, a fact that had led to speculations about a very different kind of superconducting coupling in these materials. The superconducting mechanism now turns out to be the same as that in classical superconductors

  1. Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

    Czech Academy of Sciences Publication Activity Database

    Kopecký, Miloš; Kub, Jiří; Máca, František; Mašek, Jan; Pacherová, Oliva; Rushforth, A.W.; Gallagher, B. L.; Campion, R. P.; Novák, Vít; Jungwirth, Tomáš

    2011-01-01

    Roč. 83, č. 23 (2011), , , "235324-1"-"235324-7" ISSN 1098-0121 R&D Projects: GA AV ČR IAA100100912; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : ferrmagnetic semiconductor * crystal structure * magnetic anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011 http://prb.aps.org/abstract/PRB/v83/i23/e235324

  2. Plasma resonance and flux dynamics in layered high-Tc superconductors

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Sakai, S.

    2000-01-01

    Flux dynamics of layered high Tc superconductors are considered with special emphasis on the small oscillation modes. In particular we find the dispersion relation for the plasma modes and discuss the spectra to be observed in microwave experiments.......Flux dynamics of layered high Tc superconductors are considered with special emphasis on the small oscillation modes. In particular we find the dispersion relation for the plasma modes and discuss the spectra to be observed in microwave experiments....

  3. Metallorganic precursors route for high Tc superconducting materials and related phases

    International Nuclear Information System (INIS)

    Beltran-porter, D.; Gonzalez, A.; Sanchis, M.J.; Beltran-porter, A.; Ibanez, R.; Sapina, F.

    1991-01-01

    The adequacy of the precursors approach for high Tc superconducting materials is validated by means of three examples of a new synthesis of mixed oxides which are directly related to the high Tc superconductors. The synthesis temperature is lowered significantly, and the need for extending the classic 'building block' approach is shown. The hypothesis that topochemical reactions from molecular to extended solids are posssible is proven. 28 refs

  4. Growth and characterization of high-Tc based heterostructures

    International Nuclear Information System (INIS)

    Bobba, F.; Cucolo, A. M.; Di Leo, R.; Nigro, A.; Romano, P.; Bacca, E.; Prieto, P.

    1997-01-01

    They have investigated several trilayers based on the Bi 2 Sr 2 Ca Cu 2 O 8+δ and YBa 2 Cu 3 O 7-δ families. Their trilayers were realized using Bi 2 Sr 2 Y Cu 2 O 8+δ and Pr Ba 2 Cu 3 O 7-δ oxide barriers respectively with thicknesses ranging between 100 A and 300 A. The films have been grown on (001) Sr Ti O 3 substrates by means of dc sputtering deposition in high pressure oxygen plasma. Electrical resistivity measurements showed T c = 87 K and 91 K for the Bi 2 Sr 2 Ca Cu 2 O 8+δ and YBa 2 Cu 3 O 7-δ electrodes, respectively, and a semiconductor-like behavior of the Bi 2 Sr 2 Y Cu 2 O 8+δ and Pr Ba 2 Cu 3 O 7-δ nonconducting layers. In the case of Bi 2 Sr 2 Ca Cu 2 O 8+δ / Bi 2 Sr 2 Y Cu 2 O 8+δ / Bi 2 Sr 2 Ca Cu 2 O 8+δ junctions, the tunneling dynamical conductance, G (V) at low temperatures, indicated gap-like structures at ± 30 mV. For the YBa 2 Cu 3 O 7-δ / Pr Ba 2 Cu 3 O 7-δ / YBa 2 Cu 3 O 7-δ junctions, the G(V) showed gap features with very well defined maxima at ± 45 mV and very low conductance at zero bias. They discuss both these behaviors in close comparison with the results obtained in high-T c based tunnel structures with natural barriers

  5. Feshbach shape resonance for high Tc pairing in superlattices of quantum stripes and quantum wells

    Directory of Open Access Journals (Sweden)

    A Bianconi

    2006-09-01

    Full Text Available   The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven by the architecture of material: superlattices of quantum wells (intercalated graphite or diborides and superlattices of quantum stripes (doped high Tc cuprate perovskites where the chemical potential is tuned to a Van Hove-Lifshitz singularity (vHs in the electronic energy spectrum of the superlattice associated with the change of the Fermi surface dimensionality in one of the subbands.

  6. Temperature Dependence of Quasiparticle Spectral Weight and Coherence in High Tc Superconductors

    Science.gov (United States)

    He, Yang; Zhang, Jessie; Hoffman, Jennifer; Hoffman Lab Team

    2014-03-01

    Superconductivity arises from the Cooper pairing of quasiparticles on the Fermi surface. Understanding the formation of Cooper pairs is an essential step towards unveiling the mechanism of high Tc superconductivity. We compare scanning tunneling microscope investigations of the temperature dependence of quasiparticle spectral weight and quasiparticle interference in several families of high Tc materials. We calculate the coherent spectral weight related to superconductivity, despite the coexistence of competing orders. The relation between pairing temperature and coherent spectral weight is discussed. We acknowledge support by the New York Community Trust-George Merck Fund.

  7. Models of high-Tc superconductivity and applications to electric generators and motors

    DEFF Research Database (Denmark)

    Sørensen, Mads Peter

    We present the Ginzburg Landau model for mesoscopic high-Tc superconductors of complex geometry. It is shown that giant vortices can form at boundary defects. The relation between total magnetic flux penetration through the superconductor and the externally applied field is established. This is i...

  8. Electronic components with yttrium- and bismuth-based high-Tc superconductors

    International Nuclear Information System (INIS)

    Daginnus, M.; Guettler, B.

    1992-01-01

    This project investigates the fabrication of microwave components by use of high-Tc superconductors. Detailed descriptions are given of the manufacturing and use of active Y-Ba-Cu-O components. The surface resistance of thin films used in high-quality passive microwave components such as resonators and filters is measured and optimized. (orig./MM) [de

  9. On characteristic voltage of the high Tc superconductor. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Vasiliev, B V; Uchaikin, S V [Joint Inst. for Nuclear Research, Low Temperature Physics Dept., Dubna (USSR)

    1991-12-01

    The critical currents and normal resistances of the small bridges from yttrium-based high-Tc superconducting ceramics have been measured. The characteristic voltage of these bridges was found to be approximately 20{mu}V. This effect can be explained if between the ceramic grains there are contacts of an order of one crystalline cell in size. (orig.).

  10. Electrochemical investigations of high-Tc superconductors - low-temperature electrochemistry

    International Nuclear Information System (INIS)

    Lorenz, W.J.

    1992-01-01

    This research report presents a summary of results obtained by electrochemical investigations of high-Tc superconductors at room temperature and below the critical temperature (Tc). The studies were to reveal the behaviour of the ceramic superconducting materials at the interface between superconductor and ionic conductor. (MM) With 4 tabs., 8 figs [de

  11. Ferromagnetic nanorings

    International Nuclear Information System (INIS)

    Vaz, C A F; Hayward, T J; Llandro, J; Schackert, F; Morecroft, D; Bland, J A C; Klaeui, M; Laufenberg, M; Backes, D; Ruediger, U; Castano, F J; Ross, C A; Heyderman, L J; Nolting, F; Locatelli, A; Faini, G; Cherifi, S; Wernsdorfer, W

    2007-01-01

    Ferromagnetic metal rings of nanometre range widths and thicknesses exhibit fundamentally new spin states, switching behaviour and spin dynamics, which can be precisely controlled via geometry, material composition and applied field. Following the discovery of the 'onion state', which mediates the switching to and between vortex states, a range of fascinating phenomena has been found in these structures. In this overview of our work on ring elements, we first show how the geometric parameters of ring elements determine the exact equilibrium spin configuration of the domain walls of rings in the onion state, and we show how such behaviour can be understood as the result of the competition between the exchange and magnetostatic energy terms. Electron transport provides an extremely sensitive probe of the presence, spatial location and motion of domain walls, which determine the magnetic state in individual rings, while magneto-optical measurements with high spatial resolution can be used to probe the switching behaviour of ring structures with very high sensitivity. We illustrate how the ring geometry has been used for the study of a wide variety of magnetic phenomena, including the displacement of domain walls by electric currents, magnetoresistance, the strength of the pinning potential introduced by nanometre size constrictions, the effect of thermal excitations on the equilibrium state and the stochastic nature of switching events

  12. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  13. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  14. Spin Orbit Torque in Ferromagnetic Semiconductors

    KAUST Repository

    Li, Hang

    2016-01-01

    Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read' and `write' in memory devices can

  15. Proposal of Magnetic Circuit using Magnetic Shielding with Bulk-Type High Tc Superconductors

    Science.gov (United States)

    Fukuoka, Katsuhiro; Hashimoto, Mitsuo; Tomita, Masaru; Murakami, Masato

    Recently, bulk-type high Tc superconductors having a characteristic of critical current density over 104 A/cm2 in liquid nitrogen temperature (77K) on 1T, can be produced. They are promising for many practical applications such as a magnetic bearing, a magnetic levitation, a flywheel, a magnetic shielding and others. In this research, we propose a magnetic circuit that is able to use for the magnetic shield of plural superconductors as an application of bulk-type high Tc superconductors. It is a closed magnetic circuit by means of a toroidal core. Characteristics of the magnetic circuit surrounded with superconductors are evaluated and the possibility is examined. As the magnetic circuit of the ferrite core is surrounded with superconductors, the magnetic flux is shielded even if it leaked from the ferrite core.

  16. Characteristics of YBa2Cu3O7 high-Tc superconductor with KCl

    Science.gov (United States)

    Yoon, Ki Hyun; Chang, Sung Sik

    1990-03-01

    The lattice parameters, microstructural change, transition temperature, and electrical properties of the YBa2-xKxCu3O7 high-Tc superconductor in the range from x=0 to x=0.25 have been investigated. The high-Tc orthorhombic phase increases with increasing KCl up to x=0.20, above which it decreases. The lattice parameters decrease with increasing KCl up to x=0.10, and then become nearly uniform. The grain size increases with increasing KCl up to x=0.20 due to its role as sintering agent. The specimens with x=0.2 have transition temperatures of 96 K and high magnetic susceptibility due to the contraction of lattice parameters a and b and the increase of orthorhombic distortion.

  17. The disordered Bose condensate in two dimensions: application to high-Tc superconductors

    International Nuclear Information System (INIS)

    Gold, A.

    1992-01-01

    We calculate the dynamical conductivity for a weakly disordered Bose condensate in two dimensions. The disorder is due to neutral impurities. We compare the asymptotic laws (for small and large frequencies) for neutral impurities with the ones for charged impurities. Universal functions for the dynamical transport properties are derived. The plasmon density of states shows a linear increase with energy for intermediate energies and a peak structure at larger energies. Our theoretical results are compared with experimental results (far-infrared, electron-energy-loss and Raman spectroscopy) found in the high-Tc superconductor YBa 2 Cu 3 O 7-δ . The occurrence of a quasi-gap in a disordered Bose condensate is described and discussed in connection with experiments on high-Tc superconductors. (orig.)

  18. The stress-strain relationship for multilayers of the high Tc superconducting oxides

    International Nuclear Information System (INIS)

    Hidaka, H.; Yamamura, H.

    1988-01-01

    This paper reports the calculation of the stress-strain relationship for multilayers of the high Tc superconducting oxides. The elucidation of this relationship is expected quite helpful for the preparation of high-quality multilayers of these materials. This calculation is possible to do in the same way of Timoshenko's bi-metal treatment. The authors did computation of the residual stress and strain, and the state of stress and strain for these multilayers has been acquired in detail by this calculation

  19. The Effect of Twins on Critical Currents of High Tc Superconductors

    Science.gov (United States)

    1989-01-01

    particles to stick together due to electrostatic forces. To overcome this we have formed a slurry of the material in liquid nitrogen and flash...can use and the liquid convection tends to counteract the separation process. We have-now designed a magnetic track which particles will slide down with...Currents of High Tc Superconductors" - A.M. Campbell and M.F. Ashby The initial work on levitation forces and separation of superconducting powders has

  20. Performance prediction of high Tc superconducting small antennas using a two-fluid-moment method model

    Science.gov (United States)

    Cook, G. G.; Khamas, S. K.; Kingsley, S. P.; Woods, R. C.

    1992-01-01

    The radar cross section and Q factors of electrically small dipole and loop antennas made with a YBCO high Tc superconductor are predicted using a two-fluid-moment method model, in order to determine the effects of finite conductivity on the performances of such antennas. The results compare the useful operating bandwidths of YBCO antennas exhibiting varying degrees of impurity with their copper counterparts at 77 K, showing a linear relationship between bandwidth and impurity level.

  1. Impurity scattering effect on charge transport in high-Tc cuprate junctions

    International Nuclear Information System (INIS)

    Tanaka, Y.; Asano, Y.; Kashiwaya, S.

    2004-01-01

    It is known that the zero-bias conductance peak (ZBCP) is expected in tunneling spectra of normal-metal/high-Tc cuprate junctions because of the formation of the midgap Andreev resonant states (MARS) at junction interfaces. In the present review, we report the recent theoretical study of impurity scattering effects on the tunneling spectroscopy. In the former part of the present paper, we discuss impurity effects in normal metal. We calculate tunneling conductance for diffusive normal metal (DN)/high Tc cuprate junctions based on the Keldysh Green's function technique. Besides the ZBCP due to the MARS, we can expect ZBCP caused by the different origin, i.e., the coherent Andreev reflection (CAR) assisted by the proximity effect in DN. Their relative importance depends on the angle a between the interface normal and the crystal axis of high-Tc superconductors. At α = 0, we find the ZBCP by the CAR for low transparent junctions with small Thouless energies in DN; this is similar to the case of diffusive normal metal/insulator/s-wave superconductor junctions. Under increase of α from zero to π/4, the contribution of MARS to ZBCP becomes more prominent and the effect of the CAR is gradually suppressed. Such complex spectral features would be observable in conductance spectra of high-Tc junctions at very low temperatures. In the latter part of our paper, we study impurity effects in superconductors. We consider impurities near the junction interface on the superconductor side. The conductance is calculated from the Andreev and the normal reflection coefficients which are estimated by using the single-site approximation in an analytic calculation and by the recursive Green function method in a numerical simulation. We find splitting of the ZBCP in the presence of the time reversal symmetry. Thus the zero-field splitting of ZBCP in the experiment does not perfectly prove an existence of broken time reversal symmetry state

  2. Nonequilibrium states of high tc YBCO superconductors under tunnel injection of quasiparticles

    International Nuclear Information System (INIS)

    Iguchi, I.; Wang, Q.; Lee, K.; Yoshida, K.

    1995-01-01

    The nonequilibrium states of high Tc superconductors are investigated by means of tunnel injection of quasiparticles using Pb(or Au)/MgO/YBCO tunnel junctions. The effective critical-current reduction due to tunnel injection is observed, whose behaviour is different from simple heating. The observed results suggest that the resultant nonequilibrium states may also differ from those described by conventional nonequilibrium models

  3. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  4. Analysis of eddy current loss in high-Tc superconducting power cables with respect to various structure of stabilizer

    International Nuclear Information System (INIS)

    Choi, S. J.; Song, M. K.; Lee, S. J.; Cho, J. W.; Sim, K. D.

    2005-01-01

    The High-Tc superconducting power cable consists of a multi-layer high-Tc superconducting cable core and a stabilizer which is used to bypass the current at fault time. Eddy current loss is generated in the stabilizer in normal operating condition and affects the whole system. In this paper, the eddy current losses are analyzed with respect to various structure of stabilizer by using opera-3d. Moreover, optimal conditions of the stabilizer are derived to minimize the eddy current losses from the analyzed results. The obtained results could be applied to the design and manufacture of the high-Tc superconducting power cable system.

  5. Performance of ultrahigh resolution electron microscope JEM-4000EX and some applications of high Tc superconductors

    International Nuclear Information System (INIS)

    Honda, T.; Ibe, K.; Ishida, Y.; Kersker, M.M.

    1989-01-01

    The high resolution electron microscope is powerful for modern materials science because of its direct observation capability for the atomic structure of materials. the JEM-4000EX, a 400 kV accelerating voltage electron microscope whose objective lens has a 1 mm spherical aberration coefficient, has a 0.168 nm theoretical resolving power. Using this microscope, atomic structure images of high Tc superconductor such as Y-Ba-Cu-O, Bi-Ca-Sr-Cu-O and Tl-Ca-Ba-Cu-O are reported

  6. Positron annihilation studies of the electronic structure and fermiology of high-Tc superconductors

    International Nuclear Information System (INIS)

    Smedskjaer, L.C.; Bansil, A.

    1993-01-01

    We discuss the application of the positron annihilation angular correlation (ACAR) spectroscopy for investigating the electronic structure and Fermiology of high-Tc superconductors, with focus on the YBa 2 Cu 3 O 7 system where most of the experimental and theoretical work has to date been concentrated. Detailed comparisons between the measured 2D-ACAR positron spectra and the corresponding band theory predictions show a remarkable agreement (for the normal state), indicating that the electronic structure and Fermi surface of this material is described reasonably by the conventional picture. (orig.)

  7. Electromagnetic wave absorption in high-Tc superconductors and its application

    International Nuclear Information System (INIS)

    Porjesz, T.; Khatiashvili, N.; Kovacs, Gy.; Leppavuori, S.; Uusimaki, A.; Kokkomaki, T.; Hagberg, J.

    1995-08-01

    The experimental study of the electromagnetic wave absorption of high-Tc superconductors subjected to small magnetic fields has been extended to a wide frequency range. The results obtained show an almost frequency independent behaviour in the 4 MHz - 20 GHz region. The measurement technique for the high frequency regime was developed in such a way that the sensitivity increased so much that the sample under investigation could be used as a very sensitive magnetic field detector, too. (author). 4 refs, 8 figs, 1 tab

  8. Microwave testing of high-Tc based direct current to a single flux quantum converter

    DEFF Research Database (Denmark)

    Kaplunenko, V. K.; Fischer, Gerd Michael; Ivanov, Z. G.

    1994-01-01

    Design, simulation, and experimental investigations of a direct current to a single flux quantum converter loaded with a Josephson transmission line and driven by an external 70 GHz microwave oscillator are reported. The test circuit includes nine YBaCuO Josephson junctions aligned on the grain...... boundary of a 0°–32° asymmetric Y-ZrO2 bicrystal substrate. The performance of such converters is important for the development of the fast Josephson samplers required for testing of high-Tc rapid single flux quantum circuits in high-speed digital superconducting electronics. Journal of Applied Physics...

  9. Superconductive properties, interaction mechanisms, materials preparation and electronic transport in high-Tc superconductors

    International Nuclear Information System (INIS)

    Saemann-Ischenko, G.

    1993-01-01

    The final report is composed of eight chapters dealing with the following aspects: I. Mixed state, critical currents, anisotropy, intrinsic and extrinsic pinning. II. Microwave properties and far-infrared reflectivity of epitactic HTSC films. III. Hall effect at the states of normal conductivity and superconductivity, magnetoresistance, superconducting fluctuation phenomena. IV. Effects of the nuclear and the electronic energy loss. V. Scanning electron microscopy. VI. p- and n-doped high-Tc superconductors: Charge symmetry and magnetism. VII. Preparation methods. VIII. Electrochemical examinations of HTSC films and HTSC monocrystals at low temperatures. (orig./MM) [de

  10. Magnetization and flux pinning in high-Tc cuprates: Irradiated and oxygen deficient materials

    International Nuclear Information System (INIS)

    Thompson, J.R.; Civale, L.; Marwick, A.D.; Holtzberg, F.

    1992-11-01

    This work surveys recent studies of the intragrain current density J and vortex pinning in high Tc superconductors. Materials include Y 1 Ba 2 Cu 3 O 7-δ and Bi 2 Sr 2 Ca 1 Cu 2 O 8 single crystals and aligned polycrystals. To probe the flux pinning, we modified the strength, number, and morphology of defects. Varying the oxygen content (7-δ) in YBa 2 Cu 3 O 7-δ or irradiating the materials with ions, having either light or heavy masses, gives systematic changes in the character of the all-important defects

  11. High Tc superconducting three-terminal device under quasi-particle injection

    International Nuclear Information System (INIS)

    Hashimoto, K.; Kabasawa, U.; Tonouchi, M.; Kobayashi, T.

    1988-01-01

    A new type of the current injection type three terminal device was fabricated using the high Tc YBaCuO thin epitaxial films, wherein the hot quasi-particle injection effect on the superconducting current was closely examined. The zero bias drain current was efficiently suppressed by the injection of the hot quasi-particles through the gate electrode. Though it is speculative, a comparison of the experimental results and analyses based on the familiar BCS theory intimates that the main mechanism of the current modulation is the non-equilibrium superconductivity due to accumulation of the excess quasi-particles

  12. Extended abstracts of the 12th JAERI workshop on high-Tc superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Hojou, Kiichi; Okayasu, Satoru; Sasase, Masato [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Ishida, Takekazu [Osaka Prefectual Univ., Sakai (JP)] (eds.)

    2001-03-01

    This workshop was held on December 7-8, 2000 at JAERI (Tokai). The research group at JAERI shares a responsibility for material modification of high-Tc superconductors by irradiation in 'the multi-core project II of the high temperature superconducting material research' organized by STA (Science and Technology Agency) of Japan. This report contains the extended abstracts of workshop presentations covering basic theories, various experimental results and material improvement studies of the superconductivity by high energy ion irradiation. The twelve presentations of the workshop were devoted to a mini symposium where the direct observations of vortices were discussed in view of the various sophisticated techniques. (author)

  13. Extended abstracts of the 12th JAERI workshop on high-Tc superconductors

    International Nuclear Information System (INIS)

    Hojou, Kiichi; Okayasu, Satoru; Sasase, Masato

    2001-03-01

    This workshop was held on December 7-8, 2000 at JAERI (Tokai). The research group at JAERI shares a responsibility for material modification of high-Tc superconductors by irradiation in 'the multi-core project II of the high temperature superconducting material research' organized by STA (Science and Technology Agency) of Japan. This report contains the extended abstracts of workshop presentations covering basic theories, various experimental results and material improvement studies of the superconductivity by high energy ion irradiation. The twelve presentations of the workshop were devoted to a mini symposium where the direct observations of vortices were discussed in view of the various sophisticated techniques. (author)

  14. Towards ferromagnet/superconductor junctions on graphene

    International Nuclear Information System (INIS)

    Pakkayil, Shijin Babu

    2015-01-01

    Ever since A. Aspect et al. performed the famous 1982 experiment to prove the violation of Bell's inequality, there have been suggestions to conduct the same experiment in a solid state system. Some of those proposals involve superconductors as the source of entangled electron pair and spin depended interfaces as the optical analogue of polariser/filter. Semiconductors can serve as the best medium for such an experiment due to their long relaxation lengths. So far there are no reports on a ferromagnet/superconductor junctions on a semiconductor even though such junctions has been successfully realised in metallic systems. This thesis reports the successful fabrication of ferromagnet/superconductor junction along with characterising measurements in a perfectly two dimensional zero-gap semiconductor known as graphene. Since it's discovery in 2004, graphene has attracted prodigious interest from both academia and industry due to it's inimitable physical properties: very high mobility, high thermal and electrical conductivity, a high Young's modulus and impermeability. Graphene is also expected to have very long spin relaxation length and high spin life time because of it's low spin orbit coupling. For this reason and since researchers are always looking for novel materials and devices to comply with the high demands for better and faster data storage devices, graphene has emanated as a brand new material system for spin based devices. The very first spin injection and detection in graphene was realised in 2007 and ever since, the focal point of the research has been to improve the spin transport properties. A part of this thesis discusses a new fabrication recipe which has a high yield for successfully contacting graphene with a ferromagnet. A high starting yield for ferromagnetic contacts is a irremissible condition for combining superconducting contacts to the device to fabricate ferromagnet/superconductor junctions. Any fabrication recipe

  15. Towards ferromagnet/superconductor junctions on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Pakkayil, Shijin Babu

    2015-07-01

    Ever since A. Aspect et al. performed the famous 1982 experiment to prove the violation of Bell's inequality, there have been suggestions to conduct the same experiment in a solid state system. Some of those proposals involve superconductors as the source of entangled electron pair and spin depended interfaces as the optical analogue of polariser/filter. Semiconductors can serve as the best medium for such an experiment due to their long relaxation lengths. So far there are no reports on a ferromagnet/superconductor junctions on a semiconductor even though such junctions has been successfully realised in metallic systems. This thesis reports the successful fabrication of ferromagnet/superconductor junction along with characterising measurements in a perfectly two dimensional zero-gap semiconductor known as graphene. Since it's discovery in 2004, graphene has attracted prodigious interest from both academia and industry due to it's inimitable physical properties: very high mobility, high thermal and electrical conductivity, a high Young's modulus and impermeability. Graphene is also expected to have very long spin relaxation length and high spin life time because of it's low spin orbit coupling. For this reason and since researchers are always looking for novel materials and devices to comply with the high demands for better and faster data storage devices, graphene has emanated as a brand new material system for spin based devices. The very first spin injection and detection in graphene was realised in 2007 and ever since, the focal point of the research has been to improve the spin transport properties. A part of this thesis discusses a new fabrication recipe which has a high yield for successfully contacting graphene with a ferromagnet. A high starting yield for ferromagnetic contacts is a irremissible condition for combining superconducting contacts to the device to fabricate ferromagnet/superconductor junctions. Any fabrication recipe

  16. Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

    Science.gov (United States)

    Pasanai, K.

    2017-01-01

    A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed.

  17. Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

    Energy Technology Data Exchange (ETDEWEB)

    Pasanai, K., E-mail: krisakronmsu@gmail.com

    2017-01-15

    A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed. - Highlights: • The conductance spectra of a FM/FM/FM junction were calculated. • The conductance spectra were suppressed by the exchange energy. • The exchange energy and the potential strength play similar roles in the junctions.

  18. Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

    International Nuclear Information System (INIS)

    Pasanai, K.

    2017-01-01

    A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed. - Highlights: • The conductance spectra of a FM/FM/FM junction were calculated. • The conductance spectra were suppressed by the exchange energy. • The exchange energy and the potential strength play similar roles in the junctions.

  19. Injection of spin-polarized current into semiconductor

    International Nuclear Information System (INIS)

    Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

    2003-01-01

    A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

  20. High-Tc SQUID Application for Roll to Roll Metallic Contaminant Detector

    International Nuclear Information System (INIS)

    Tanaka, S.; Kitamura, Y.; Uchida, Y.; Hatsukade, Y.; Ohtani, T.; Suzuki, S.

    2012-01-01

    A sensitive eight-channel high-Tc Superconducting Interference Device (SQUID) detection system for magnetic contaminant in a lithium ion battery anode was developed. Finding ultra-small metallic foreign matter is an important issue for a manufacturer because metallic contaminants carry the risk of an internal short. When contamination occurs, the manufacturer of the product suffers a great loss from recalling the tainted product. Metallic particles with outer dimensions smaller than 100 microns cannot be detected using a conventional X-ray imaging system. Therefore, a highly sensitive detection system for small foreign matter is required. We have already developed a detection system based on a single-channel SQUID gradiometer and horizontal magnetization. For practical use, the detection width of the system should be increased to at least 65 mm by employing multiple sensors. In this paper, we present an 8-ch high-Tc SQUID roll-to-roll system for inspecting a lithium-ion battery anode with a width of 65 mm. A special microscopic type of a cryostat was developed upon which eight SQUID gradiometers were mounted. As a result, small iron particles of 35 microns on a real lithium-ion battery anode with a width of 70 mm were successfully detected. This system is practical for the detection of contaminants in a lithium ion battery anode sheet.

  1. Josephson junction between two high Tc superconductors with arbitrary transparency of interface

    Directory of Open Access Journals (Sweden)

    GhR Rashedi

    2010-03-01

    Full Text Available In this paper, a dc Josephson junction between two singlet superconductors (d-wave and s-wave with arbitrary reflection coefficient has been investigated theoretically. For the case of high Tc superconductors, the c-axes are parallel to an interface with finite transparency and their ab-planes have a mis-orientation. The physics of potential barrier will be demonstrated by a transparency coefficient via which the tunneling will occur. We have solved the nonlocal Eilenberger equations and obtained the corresponding and suitable Green functions analytically. Then, using the obtained Green functions, the current-phase diagrams have been calculated. The effect of the potential barrier and mis-orientation on the currents is studied analytically and numerically. It is observed that, the current phase relations are totally different from the case of ideal transparent Josephson junctions between d-wave superconductors and two s-wave superconductors. This apparatus can be used to demonstrate d-wave order parameter in high Tc superconductors.

  2. Internal resonance of an elastic body levitated above high-Tc superconducting bulks

    International Nuclear Information System (INIS)

    Kokuzawa, T; Toshihiko, S; Yoshizawa, M

    2010-01-01

    In high-Tc superconducting magnetic levitation systems, levitated bodies can keep stable levitation with no contact and no control and thus their damping is very small. Thanks to these features, their applications to various apparatus are expected. However, on account of their small damping, the nonlinearity of electromagnetic levitation force can give notable effects upon motion of the levitated bodies. Therefore this nonlinearity must be taken into account to accurately analyze the dynamical behavior of the levitated bodies. Structures of such a levitated body can show elastic deformation if the large electromagnetic force acts on it. Therefore, we need to deal with the model as an elastic body. As mentioned above, nonlinear characteristics easily appear in this elastic vibration on account of the small damping. Especially when the ratio of the natural frequencies of the eigenmodes is integer, internal resonance can occur. This nonlinear resonance is derived from nonlinear interactions among the eigenmodes of the elastic levitated body. This kind of internal resonance of an elastic body appearing in high-Tc superconducting levitation systems has not been studied so far. This research especially deals with internal resonance of a beam supported at both its ends by electromagnetic forces acting on permanent magnets. The governing equation with the nonlinear boundary conditions for the dynamics of a levitated beam has been derived. Numerical results show internal resonance of the 1st mode and the 3rd mode. Experimental results are qualitatively in good agreement with numerical ones.

  3. The NMR probe of high-Tc materials and correlated electron systems

    CERN Document Server

    Walstedt, Russell E

    2018-01-01

    This new edition updates readers in three areas of NMR studies, namely, recent developments in high-Tc materials, heavy fermion systems and actinide oxides are presented.  The NMR probe has yielded a vast array of data for solid state materials, corresponding to different compounds, ionic sites, and nuclear species, as well as to a wide variety of experimental conditions. The last two parts of the book are completely new in this edition, while the first part has seen major updates. This edition features the latest developments for high-Tc materials, especially the advances in the area of pseudogap studies are reviewed.  An in depth overview of heavy fermion systems is presented in the second part,  notably Kondo lattices, quantum critical points and unconventional superconductivity are areas of intense research recently and are covered extensively. Finally, valuable information from NMR studies with actinide oxides will be provided. Ongoing analysis and discussion of NMR data have resulted in a wealth o...

  4. Preparation and properties of high-Tc Bi-oxide superconductors

    International Nuclear Information System (INIS)

    Maeda, H.

    1989-01-01

    Bulk superconductors of Pb-doped Bi-oxide system (BSCCO) dominated with the high-Tc phase have the critical transition temperature, Tc of 110 K, and the upper critical fields, H c2 of 140 T at OK and 60 T at 77 K. A highly dense and a highly oriented microstructure is obtained by inserting an intermediate uniaxial pressing process. The critical current density, Jc at 77 K in zero field, Jc (77K,OT) of some 5000 A/cm 2 can be easily obtained by this process, and the field dependence of Jc is also improved. Flexible high-Tc BSCCO ribbons with a Jc (77K,Ot) of 1850 A/cm 2 have been successfully prepared by the combined process of doctor blade casting, cold rolling and sintering. Aq-sheeted multifilamentary wires with 1330 filaments and tapes with 30 filaments have also been successfully fabricated and the 36-filament tape shows a Jc(77K,OT) of 1050 A/cm 2 . (Auth.). 7 refs.; 7 figs

  5. The Physics of Ferromagnetism

    CERN Document Server

    Miyazaki, Terunobu

    2012-01-01

    This book covers both basic physics of ferromagnetism such as magnetic moment, exchange coupling, magnetic anisotropy and recent progress in advanced ferromagnetic materials. Special interests are focused on NdFeB permanent magnets and the materials studied in the field of spintronics. In the latter, development of tunnel magnetoresistance effect through so called giant magnetoresistance effect is explained.

  6. Internal friction and ultrasonic attenuation in solids, including high Tc superconductors

    International Nuclear Information System (INIS)

    Magalas, L.B.; Gorczyca, S.

    1993-01-01

    This volume contains seven invited papers and about eighty refereed contributions from the main sessions of the Sixth European Conference on Internal Friction and Ultrasonic Attenuation in Solids (ECIFUAS-6) held at the Academy of Mining and Metallurgy (Akademia Gorniczo-Hutnicza, AGH) in Krakow, Poland, 5-7 September, 1991. In addition, this volume contains six invited lectures and eight contributed papers presented at the Workshop on High Tc Superconductors on 5 September, 1991. Together these documents constitute the Proceedings of the ECIFUAS-6 Conference. A total of 140 scientists from 20 countries participated in the Conference. The programme of the Conference and the Workshop consisted of 16 invidet papers and 119 contributed papers. 107 papers were presented during 8 poster sessions. (orig.)

  7. Internal friction of flux motion in Hg-system high-Tc superconductors

    International Nuclear Information System (INIS)

    Tian, W.; Zhu, J.S.; Shao, H.M.; Li, J.; Wang, Y.N.

    1996-01-01

    The internal friction(IF) and modulus as functions of temperature were measured for several Hg-system high-Tc superconductors(Hg1201, Hg1223, Hg1223 doped with Fe and Pb), under the applied magnetic field, with vibrating reed technique. An IF peak associated with flux motion can be found below Tc for all samples. The temperature of the IF peak increases with reducing vibrating amplitude. This amplitude dependence of IF indicates that the flux motion is characterized by nonlinear behavior. No apparent shift of IF peak position can be detected by varying the frequency in the range from 10 2 Hz to 10 3 Hz. Furthermore, the IF peak height satisfies a scaling law Q -1 ∝ω -n . This may be originated from phase transition of flux line lattice(FLL) rather than a thermally activated diffusion process. (orig.)

  8. High-Tc Superconducting Bolometer Noise Measurement Using Low Noise Transformers - Theory and Optimization

    Science.gov (United States)

    Aslam, Shahid; Jones, Hollis H.

    2011-01-01

    Care must always be taken when performing noise measurements on high-Tc superconducting materials to ensure that the results are not from the measurement system itself. One situation likely to occur is with low noise transformers. One of the least understood devices, it provides voltage gain for low impedance inputs (< 100 ), e.g., YBaCuO and GdBaCuO thin films, with comparatively lower noise levels than other devices for instance field effect and bipolar junction transistors. An essential point made in this paper is that because of the complex relationships between the transformer ports, input impedance variance alters the transformer s transfer function in particular, the low frequency cutoff shift. The transfer of external and intrinsic transformer noise to the output along with optimization and precautions are treated; all the while, we will cohesively connect the transfer function shift, the load impedance, and the actual noise at the transformer output.

  9. Point-contact electron tunneling into the high-Tc superconductor Y-Ba-Cu-O

    Science.gov (United States)

    Kirk, M. D.; Smith, D. P. E.; Mitzi, D. B.; Sun, J. Z.; Webb, D. J.

    1987-06-01

    Results are reported from a study of electron tunneling into bulk samples of the new high-Tc superconductor Y-Ba-Cu-O using point-contact tunneling. Based on a superconductive tunneling interpretation, the results show exceptionally large energy gaps in these materials (roughly 2Delta = 100 MeV), implying 2Delta/kBTc = about 13. Similar values were found for La-Sr-Cu-O. The structure in the I-V curves is also similar to that seen in La-Sr-Cu-O. From the asymmetries observed in the I-V characteristics, it is inferred that the natural tunneling barrier on this material is of the Schottky type.

  10. Changes of soft X-ray emission spectra of oxygen and copper in high Tc superconductors

    International Nuclear Information System (INIS)

    Fukushima, Sei; Gohshi, Yohichi; Kohiki, Shigemi; Saitoh, Naoki

    1989-01-01

    X-ray induced soft X-ray emission spectroscopy is one of the bulk analysis methods used to characterize high-Tc superconductor. In this report, some observations on the changes in O Kα and Cu L spectra of thin layer LnBa 2 Cu 3 O 7-δ (Ln=Er,Gd) samples are presented. From the measurement of O Kα, no discernible difference was found between those of Gd compounds which were composed single phase or not. It may be said that the electronic structure of p state localized on the O is not sensitive to the change of Tc or zero-resistance temperature. From the measurement of Cu L spectra, it was found that Cu Lα of only Gd containing compounds has a low energy shoulder

  11. Transport phenomena in high Tc superconductors. Resume of Ph.D thesis

    International Nuclear Information System (INIS)

    Crisan, I.A.

    1994-01-01

    This is an extended abstract of the Ph. D. thesis devoted to the transport phenomena in high-Tc superconductors. There are three chapters. The first chapter presents an overview of the essential theoretical aspects concerning the vortex dynamics particularly in ceramic superconductors. The chapter two gives a description of the preparation methods of superconductor samples used by the author as well as the measurement devices for volt-ampere characteristics and the associated electronic circuitry. In the third chapter there are presented the experimental data obtained from different samples prepared in different temperature and magnetic field conditions. The obtained results are finally interpreted in the frame of existent or original models. (M.I.C.). 31 Refs

  12. Electrical Insulation of 500-m High-Tc Superconducting Power Cable

    International Nuclear Information System (INIS)

    Takahashi, T; Ichikawa, M; Suzuki, H; Okamoto, T; Akita, S; Mukoyama, S; Yagi, M; Maruyama, S; Kimura, A

    2006-01-01

    Electrical insulation is one of the essential technologies for the electric power apparatus. Determination of testing voltages and design method of the electrical insulation layer are inextricably linked each other, and are critical to developing and realizing a cold dielectric (CD) type high-Tc superconducting (HTS) power cable. The authors had proposed the electrical insulation design method with concepts of partial discharge-free designs for ac voltage condition. This paper discusses the testing voltages for a 77 kV 1000 A HTS power cable with a length of 500 m, and describes results of various voltage withstand test. As a result, it is concluded that the proposed electrical insulation design method is appropriate for the HTS power cable

  13. Quality criteria for high Tc superconductors and on the clarification of the superconducting mechanism

    International Nuclear Information System (INIS)

    Haase, E.L.; Ruzicka, J.

    1992-03-01

    After the successful basic solution of the Nb 3 Ge and Nb 3 Si problems, optimization strategies and quality criteria were developed for high Tc superconducting (HTCS) samples in analogy. After improvements of the sputtering system, the preparation parameters were tightly controlled, leading to samples with a reproducible linear slope of the specific resistance ρ(T). Further improvements by us and Poppe et al. lead to the preparation of 123 films with non-linear ρ(T) curves above 120K. A generalization to a T 2 behavior of ρ(T) leads to the further generalization that defect free HTCS are essentially two dimensional in nature, with all ensuing consequences. The momentum transport of the moving charge cariers requires, because of momentum conservation, a mechanism to transfer momentum to the lattice (momentum relaxation). The qualitative theory developed for two dimensional (2D) systems shows that the electron-phonon interaction is strongly suppressed and hence that the weaker electron-electron interaction dominates. That theory makes numerous predictions, which so far are confirmed by experiments. In particular, it accounts for the extreme temperature dependence of the mean free path and the Hall effect. It is inferred that the mechanism of HTCS is predominantly due to electron-electron interaction - probably of bipolaron nature, as indicated by experiment. At this point experiment meets just a few theories, that conform with the experimental facts and above theory, all based on the quasi-particle theory of electron-electron interaction. The theory of Newns, Pattnaik and Tsuei should have a T 2 shape of ρ(T) and, because E F lies near a nearly logarithmic van Hove singularity, accounts for the high Tc. Ruvalds and Virosztek's theory predicts the T 2 shape of ρ(T). (orig./GSCH)

  14. The effect of long annealing on Pb-doped high-Tc Bi-Sr-Ca-Cu-O systems

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, S.; Agnihotry, S.A.; Asthana, P.; Nagpal, K.C.; Saini, K.K.; Chanderkant; Sharma, C.P.; Ekbote, S.N. (National Physical Lab., New Delhi (India))

    1991-01-16

    The lead doped Bi based copper oxide high-Tc superconductors with different nominal compositions and with different annealing time periods are studied. The highest Tc (zero) achieved is 112 K in bulk phase 2223. The varying intensity of the low angle line at 2{theta}{approx equal}4.7deg suggests the gradual formation of the high-Tc phase due to the long annealing of nearly 200 to 250 h. It is also found that the high-Tc phase starts degrading after 250 h of annealing and Tc reduces. The distortion of the 2223 phase is suggested by the broadening of different XRD peaks, also the SEM studies support the above contention. The EDAX studies show no presence of Pb in the crystallites. (orig.).

  15. Experimental Set-Up for Evaluation of Electro-Magnetic Characteristics of High-Tc Superconductors Cooled by Liquid Hydrogen

    OpenAIRE

    Shirai, Yasuyuki; Hikawa, Kyosuke; Shiotsu, Masahiro; Tatsumoto, Hideki; Hata, Koichi; Kobayashi, Hiroaki; Nonaka, Satoshi; Naruo, Yoshihiro; Inatani, Yoshifumi

    2013-01-01

    Liquid hydrogen (LH2) has excellent properties as a coolant, such as large latent heat, low viscosity coefficient, etc. Not only MgB2 but also other high-Tc superconductors are expected to have excellent properties when cooled by LH2. It is necessary for a stability design of a high-Tc superconductor cooled by LH2 to make an electro-magnetic characteristic clear. However, due to the handling difficulties of LH2, there are only few papers on the properties of LH2-cooled superconductors, especi...

  16. Integrated-circuit microwave detector based on granular high-Tc thin films. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Drobinin, A.V.; Lutovinov, V.S.; Starostenko, I.V. (Moscow Inst. of Radioengineering, Electronics and Automation, (MIREA), Moscow (USSR))

    1991-12-01

    A highly sensitive integrative-circuit microwave detector based on granular High-Tc film has been designed. All matching circuits and High-Tc microbridge are located on the same substrate. The voltage responsivity 10{sup 3} V/W has been found at 65 K and frequency 5 GHz. Different modes of microwave detection have been observed: bolometric response near Tc in high-quality films, rectification mode caused by an array of weak links dominating in low-quality films, detection caused by nonlinear magnetic flux motion. (orig.).

  17. Dimensionality Driven Enhancement of Ferromagnetic Superconductivity in URhGe

    Science.gov (United States)

    Braithwaite, Daniel; Aoki, Dai; Brison, Jean-Pascal; Flouquet, Jacques; Knebel, Georg; Nakamura, Ai; Pourret, Alexandre

    2018-01-01

    In most unconventional superconductors, like the high-Tc cuprates, iron pnictides, or heavy-fermion systems, superconductivity emerges in the proximity of an electronic instability. Identifying unambiguously the pairing mechanism remains nevertheless an enormous challenge. Among these systems, the orthorhombic uranium ferromagnetic superconductors have a unique position, notably because magnetic fields couple directly to ferromagnetic order, leading to the fascinating discovery of the reemergence of superconductivity in URhGe at a high field. Here we show that uniaxial stress is a remarkable tool allowing the fine-tuning of the pairing strength. With a relatively small stress, the superconducting phase diagram is spectacularly modified, with a merging of the low- and high-field superconducting states and a significant enhancement of the superconductivity. The superconducting critical temperature increases both at zero field and under a field, reaching 1 K, more than twice higher than at ambient pressure. This enhancement of superconductivity is shown to be directly related to a change of the magnetic dimensionality detected from an increase of the transverse magnetic susceptibility: In addition to the Ising-type longitudinal ferromagnetic fluctuations, transverse magnetic fluctuations also play an important role in the superconducting pairing.

  18. An investigation into texturing of high-Tc superconducting ceramics by creep-sintering

    International Nuclear Information System (INIS)

    Regnier, P.; Le Hazif, R.; Chaffron, L.

    1989-01-01

    The possibility of preparing highly textured samples of YBa 2 Cu 3 O 7-x high-Tc ceramics by creep-sintering under an uniaxial stress was investigated in detail. It is shown that the quality of the texture is sharply dependant on: the applied load, the temperature of the sintering dwell, the rate at which this dwell is reached, the exact instant at which the load is applied and the nature of the material in contact with the sample. It is also shown that further annealing without applied stress enhances the texture and considerably increases the grain size. Deformation, which was systematically recorded, occurs within a few minutes after the load is applied and exhibits a stress dependance typical of a viscous flow. Systematic examination by polarized light microscopy has indicated that the texture was homogeneous throughout the whole thickness of all the prepared samples. The resistivity versus temperature curves show that the transition is very sharp and well above 77 K

  19. A universal order underlying the pseudogap regime of the underdoped high Tc cuprates

    Science.gov (United States)

    Harrison, Neil

    2014-03-01

    A major achievement in condensed matter physics in the last quarter century has been a step towards the understanding of the unconventional d-wave superconducting state in the copper-oxide materials. Surprisingly, the normal state out of which the superconducting state emerges remains a mystery at low charge carrier densities, i.e., in the underdoped regime. This regime is of particular interest because it is characterised by an unusual momentum dependent energy pseudogap in the excitation spectrum that has defied explanation and is key to a full understanding of the unconventional d-wave superconducting state. I will present new quantum oscillation experimental results within the pseudogap regime of the high Tc superconductors YBa2Cu3O6+x and YBa2Cu4O8 which now extend up to the optimally-doped regime. These data reveal the evolution of the Fermi surface approaching the putative quantum critical point under the superconducting dome. A comprehensive angle-resolved study of the Fermi surface enables us to unambiguously identify a specific form of order that accounts for the observed quantum oscillations as well as other spectroscopic, transport and thermodynamic probes within the pseudogap regime. The author would like to thank B. Ramshaw, S. Sebastian, F. Balakirev, C. Mielke, M. Altarawneh, P. Goddard, S. Sabok, B. Babrowski, D. Bonn, W. Hardy, R. Liang and G. Lonzarich. This work was supported by the DOE BES ``Science of 100 tesla'' project and by the NSF and Florida State.

  20. The electronic structure of the high-TC cuprates within the hidden rotating order

    Science.gov (United States)

    Azzouz, M.; Ramakko, B. W.; Presenza-Pitman, G.

    2010-09-01

    The doping dependence of the Fermi surface and energy distribution curves of the high-TC cuprate materials La2 - xSrxCuO4 and Bi2Sr2CaCu2O8 + δ are analyzed within the rotating antiferromagnetism theory. Using three different quantities; the k-dependent occupation probability, the spectral function, and the chemical potential (energy spectra), the Fermi surface is calculated and compared to experimental data for La2 - xSrxCuO4. The Fermi surface we calculate evolves from hole-like pockets in the underdoped regime to large electron-like contours in the overdoped regime. This is in agreement with recent findings by Sebastian et al for the α-pocket of Y Ba2Cu3O6 + x (2010 Phys. Rev. B 81 214524). In addition, the full width at half maximum of the energy distribution curves is found to behave linearly with their peak position in agreement with experiment for Bi2Sr2CaCu2O8 + δ. The effect of scattering on both the Fermi surface and energy distribution curves is examined.

  1. What is the role of Pb(II) in high Tc superconductors

    International Nuclear Information System (INIS)

    Raveau, B.; Hervieu, M.; Michel, C.; Groult, D.; Provost, J.

    1990-01-01

    An overview of the layered lead cuprates is presented here. The structure of these oxides and their non-stoichiometry are studied in connection with their superconducting properties. The phenomena involving a modulation of the structure, characterized by the presence of satellites on E.D. patterns are described and the particular role of the 6s 2 lone pair of Pb(II) is discussed. Divalent lead is, owing to its size intermediate between that of strontium and barium, a potential cation for superconductive cuprates. Moreover, this interest for Pb(II), is supported by its electronic structure which involves an electronic 6s 2 lone pair well known for its ability to form layered structures. In spite of these characteristics, few superconductive layered suprates were isolated at the beginning of the rush to high Tc superconductors. This is probably due to the possibility of existence of redox reactions involving the couple Pb(II)/Pb(IV), which require very particular experimental conditions. The authors report here on the recent development of the crystal chemistry of those materials and on their corresponding superconducting properties

  2. Prediction of high-Tc conventional superconductivity in the ternary lithium borohydride system

    Science.gov (United States)

    Kokail, Christian; von der Linden, Wolfgang; Boeri, Lilia

    2017-12-01

    We investigate the superconducting ternary lithium borohydride phase diagram at pressures of 0 and 200 GPa using methods for evolutionary crystal structure prediction and linear-response calculations for the electron-phonon coupling. Our calculations show that the ground state phase at ambient pressure, LiBH4, stays in the P n m a space group and remains a wide band-gap insulator at all pressures investigated. Other phases along the 1 :1 :x Li:B:H line are also insulating. However, a full search of the ternary phase diagram at 200 GPa revealed a metallic Li2BH6 phase, which is thermodynamically stable down to 100 GPa. This superhydride phase, crystallizing in a F m 3 ¯m space group, is characterized by sixfold hydrogen-coordinated boron atoms occupying the fcc sites of the unit cell. Due to strong hydrogen-boron bonding this phase displays a critical temperature of ˜100 K between 100 and 200 GPa. Our investigations confirm that ternary compounds used in hydrogen-storage applications should exhibit high-Tc conventional superconductivity in diamond anvil cell experiments, and suggest a viable route to optimize the superconducting behavior of high-pressure hydrides, exploiting metallic covalent bonds.

  3. Electronic properties of high Tc superconductors. Propiedades electronicas de los superconductores de alta temperatura critica

    Energy Technology Data Exchange (ETDEWEB)

    Rojo, A G

    1989-01-01

    Using analytical and numerical methods, the electronic properties of the copper-oxygen plane in the normal phase of high Tc superconductors are described. Using the slave-boson technique in the saddle point, a theory of the metal insulator transition which generalizes the notions of a Mott insulator to the case of more than a single band for those planes is presented. A phase-diagram is obtained in the parameter space and effective masses, optical gaps and metallization are calculated as a function of the number of carriers. Based on the experimental evidence, the theory permits classification of superconducting compounds as charge transfer insulators in the stoichiometric case. The insulator state is characterized by a non-zero optical gap and a divergent effective mass which corresponds to the breakage of a Fermi-liquid scheme. The results obtained are applicable to metal-transition-oxides whose behaviour has been traditionally controversial and it is concluded that it is necessary to broaden the meaning of a Mott insulator to the case of more than a single band to better understand them. Based on the ideas of group renormalization in a real space, a lattice approximation is presented, which allows: a) To complement the treatment of slave-bosons in phase diagrams and optical gaps; b) Identification of an attraction mechanism between carriers originating from purely repulsive interactions. Numerical calculations in small clusters show the existence of a pairing mechanism showing a superconducting instability from a charge transfer insulator. (Author).

  4. Strong correlations and the search for high-Tc superconductivity in chromium pnictides and chalcogenides

    Science.gov (United States)

    Pizarro, J. M.; Calderón, M. J.; Liu, J.; Muñoz, M. C.; Bascones, E.

    2017-02-01

    Undoped iron superconductors accommodate n =6 electrons in five d orbitals. Experimental and theoretical evidence shows that the strength of correlations increases with hole doping, as the electronic filling approaches half filling with n =5 electrons. This evidence delineates a scenario in which the parent compound of iron superconductors is the half-filled system, in analogy to cuprate superconductors. In cuprates the superconductivity can be induced upon electron or hole doping. In this work we propose to search for high-Tc superconductivity and strong correlations in chromium pnictides and chalcogenides with n slave-spin and multiorbital random-phase-approximation calculations we analyze the strength of the correlations and the superconducting and magnetic instabilities in these systems with the main focus on LaCrAsO. We find that electron-doped LaCrAsO is a strongly correlated system with competing magnetic interactions, with (π ,π ) antiferromagnetism and nodal d -wave pairing being the most plausible magnetic and superconducting instabilities, respectively.

  5. Electrical and microstructural characterization of silver sheathed high Tc superconductors wires and ribbons

    International Nuclear Information System (INIS)

    Chaffron, L.; Regnier, P.; Schmirgeld, L.; Maurice, F.; Aguillon, C.; Senoussi, S.

    1991-01-01

    High Tc superconductors wires and ribbons were prepared according to the powder in tube method. It is shown that the electrical performances of the so prepared superconductors can be considerably improved, first by increasing as much as possible the density of the green body before sintering, and afterwards by melt texturing the sintered conductors. Some measurements of the transport critical current density of our conductors as a function of their diameter or their thickness are then presented and compared with indirect values obtained via the Bean method. The highest transport Jc measured in the present study, before melt texturing, are: 2250 and 5100 A/cm 2 at 77 and 63 K respectively, for a 50 μm thick silver sheathed ribbon. These figures compare nicely with the values of the intergranular critical current densities determined from magnetic measurements which are: 2100 and 5000 A/cm 2 at the same temperatures, and 40000 A/cm 2 at 4.2 K. Much higher intergranular values, in the range of 10 5 A/cm 2 were obtained after melt texturing the wires. Finally, microstructural characterizations carried out by X-ray diffraction, electron microprobe analysis and transmission electron microscopy are reported and discussed

  6. Singularity in the positive Hall coeffcient near pre-onset temperatures in high-Tc superconductors

    Science.gov (United States)

    Vezzoli, G. C.; Chen, M. F.; Craver, F.; Moon, B. M.; Safari, A.; Burke, T.; Stanley, W.

    1990-10-01

    Hall measurements using continuous extremely slow cooling and reheating rates as well as employing eqiulibrium point-by-point conventional techniques reveals a clear anomally in RH at pre-onset temperatures near Tc in polycrystalline samples Y1Ba2Cu3O7 and Bi2Sr2Ca2Cu3O10. The anomaly has the appearance of a singularity of Dirac-delta function which parallels earlier work on La1-xSrxCuO4. Recent single crystal work on the Bi-containing high-Tc superconductor is in accord with a clearcut anomaly. The singularity is tentatively interpreted to be associated (upon cooling) with initially the removal of positive holes from the hopping conduction system of the normal state such as from the increased concentration of bound virtual excitons due to increased exciton and hole lifetimes at low temperature. Subsequently the formation of Cooper pairs by mediation from these centers (bound-holes) and/or bound excitons) may cause an ionization of these bound virtual excitons thereby re-introducing holes and electrons into the conduction system at Tc.

  7. Spectroscopy of metal "superatom" nanoclusters and high-Tc superconducting pairing

    Science.gov (United States)

    Halder, Avik; Kresin, Vitaly V.

    2015-12-01

    A unique property of metal nanoclusters is the "superatom" shell structure of their delocalized electrons. The electronic shell levels are highly degenerate and therefore represent sharp peaks in the density of states. This can enable exceptionally strong electron pairing in certain clusters composed of tens to hundreds of atoms. In a finite system, such as a free nanocluster or a nucleus, pairing is observed most clearly via its effect on the energy spectrum of the constituent fermions. Accordingly, we performed a photoionization spectroscopy study of size-resolved aluminum nanoclusters and observed a rapid rise in the near-threshold density of states of several clusters (A l37 ,44 ,66 ,68 ) with decreasing temperature. The characteristics of this behavior are consistent with compression of the density of states by a pairing transition into a high-temperature superconducting state with Tc≳100 K. This value exceeds that of bulk aluminum by two orders of magnitude. These results highlight the potential of novel pairing effects in size-quantized systems and the possibility to attain even higher critical temperatures by optimizing the particles' size and composition. As a new class of high-temperature superconductors, such metal nanocluster particles are promising building blocks for high-Tc materials, devices, and networks.

  8. High-Tc dc-SQUID gradiometers in flip-chip configuration

    Science.gov (United States)

    Peiselt, K.; Schmidl, F.; Linzen, S.; Anton, A. S.; Hübner, U.; Seidel, P.

    2003-12-01

    We describe a new design of a gradiometric flip-chip antenna, which is inductively coupled to a dc-SQUID gradiometer. Both components are patterned out of thin films of the high-Tc superconductor YBa2Cu3O7-x (YBCO). For the flip-chip antenna, a 40 mm × 10 mm SrTiO3 single crystalline substrate is used, while the gradiometer sensors are prepared on 10 mm × 10 mm SrTiO3 bicrystal substrates. Special attention is paid to the inductive coupling between the flip-chip antenna and the read-out gradiometer antenna. We investigate different designs of coupling loops in order to optimize the coupling inductance between both components of the sensor. With optimized coupling the sensor achieves a field-gradient resolution of 12 fT cm-1 Hz-1/2 in the white noise region and of 310 fT cm-1 Hz-1/2 at 1 Hz in the unshielded laboratory environment.

  9. Correlation effects in high-Tc superconductors and heavy fermion compounds

    International Nuclear Information System (INIS)

    Kuzemsky, A.L.

    1993-10-01

    This paper describes certain aspects of Highly Correlated Systems (HCS) such as high Tc superconductors (HTSC) and some new class of Heavy Fermion (HF) systems which have been studied recently. The problem is discussed on how the charge and spin degrees of freedom participate in the specific character of superconductivity in the copper oxides and competition of the magnetism and Kondo screening in heavy fermions. The electronic structure and possible superconducting mechanisms of HTSC compounds are discussed. The similarity and dissimilarity with HF compounds is pointed out. It is shown that the spins and carriers in the copper oxides are coupled in a very nontrivial way in order to introduce the discussion and the comparison of the Emery model, the t - J-model and the Kondo-Heisenberg model. It concerns attempts to derive from fundamental multi-band Hamiltonian the reduced effective Hamiltonians to extract and separate the relevant low-energy physics. A short review of the arguments which seem to support the spin-polaron pairing mechanism in HTSC are presented. Many other topics like the idea of mixed valence states in oxides, the role of charge transfer (CT) excitations, phase separation, self-consistent nonperturbative technique, etc. are also discussed. (author). 161 refs

  10. Report on neutron beam utilization and study of high Tc superconductors at NRI

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Vuong Huu [Nuclear Physics Dept., Nuclear Research Inst. (NRI), Dalat (Viet Nam)

    1998-10-01

    Utilization of reactor neutron beams at NRI for research and applications up to November 1996 had been presented at the last Workshop in Jakarta (25-28 Nov., 1996). This paper describes new research and applications carried out at Nuclear Physics Department of NRI after that time. They consist of neutron beam developments, neutron activation cross section measurements for waste disposal assessment and in-vivo prompt gamma neutron activation analysis for Cd determination in organs. After the last Sub-Workshop on Neutron Scattering in Serpong (21-23 Nov., 1996), we were accepted to participate in the Regional Program on Study of High Tc Superconductors with the topic `The mechanism of Pb and Sb dopant role on superconductivity of 2223 phase of Bi-Sr-Ca-Cu-O system`. Indeed, this study has begun at NRI only since August, 1997 due to the problem of materials. The study has been carried out in collaboration with the Hanoi State University (Superconductors Department) where experts and equipment for superconductors research have been considered as the best ones in Vietnam. Primary results in this study are presented in this workshop. (author)

  11. Detection of nuclear magnetic resonance in the microtesla range using a high Tc dc-SQUID

    Science.gov (United States)

    Wang, Ning; Jin, Yirong; Li, Shao; Ren, Yufeng; Tian, Ye; Chen, Yingfei; Li, Jie; Chen, Genghua; Zheng, Dongning

    2012-12-01

    We have detected the ultra-low field nuclear magnetic resonance signal from water samples using a high-Tc dc-SQUID sensor. The measurements were carried out in a homemade magnetically shielded room. Resonance spectra of 1H from tap water and other substance samples were obtained in the field range from 7-110μT corresponding to resonance frequency 300-4.68kHz. Two kind of experimental systems were built, the first one is a directly coupled system, its signal to noise ratio in a single-shot measurement is around 4 for about 15 ml water. The second one used a Cu coil to transfer the flux to the SQUID sensor. Signal to noise ratio was improved to about 20 in a single-shot measurement for 5ml water, which benefits from the improvement of coupling efficiency. The effect of residual gradient in the magnetically shielded room was also investigated. J-coupling of 2,2,2-Trifluoroethyl alcohol was measured, the peaks are consistent with high field results.

  12. Nanoscale insight of high piezoelectricity in high-TC PMN-PH-PT ceramics

    Science.gov (United States)

    Zhu, Rongfeng; Zhang, Qihui; Fang, Bijun; Zhang, Shuai; Zhao, Xiangyong; Ding, Jianning

    2018-03-01

    The piezoelectric properties of the high-Curie temperature (high-TC) 0.15Pb(Mg1/3Nb2/3)O3-0.38PbHfO3-0.47PbTiO3 (0.15PMN-0.38PH-0.47PT) ceramics prepared by three different methods were compared. The 0.15PMN-0.38PH-0.47PT ceramics synthesized by the partial oxalate route exhibit the optimum properties, in which d33* = 845.3 pm/V, d33 = 456.2 pC/N, Kp = 67.2%, and TC = 291 °C. The nanoscale origin of the high piezoelectric response of the 0.15PMN-0.38PH-0.47PT ceramics was investigated by piezoresponse force microscopy (PFM) using the ceramics synthesized by the partial oxalate route. Large quantities of fine stripe submicron ferroelectric domains are observed, which form large island domains. In order to give further insights into the piezoelectric properties of the 0.15PMN-0.38PH-0.47PT ceramics from a microscopic point of view, the local poling experiments and local switching spectroscopy piezoresponse force microscopy (SS-PFM) were investigated, from which the local converse piezoelectric coefficient d33*(l) is calculated as 220 pm/V.

  13. Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

    Directory of Open Access Journals (Sweden)

    Faxian Xiu

    2011-03-01

    Full Text Available Electric-field control of ferromagnetism in magnetic semiconductors at room temperature has been actively pursued as one of the important approaches to realize practical spintronics and non-volatile logic devices. While Mn-doped III-V semiconductors were considered as potential candidates for achieving this controllability, the search for an ideal material with high Curie temperature (Tc>300 K and controllable ferromagnetism at room temperature has continued for nearly a decade. Among various dilute magnetic semiconductors (DMSs, materials derived from group IV elements such as Si and Ge are the ideal candidates for such materials due to their excellent compatibility with the conventional complementary metal-oxide-semiconductor (CMOS technology. Here, we review recent reports on the development of high-Curie temperature Mn0.05Ge0.95 quantum dots (QDs and successfully demonstrate electric-field control of ferromagnetism in the Mn0.05Ge0.95 quantum dots up to 300 K. Upon the application of gate-bias to a metal-oxide-semiconductor (MOS capacitor, the ferromagnetism of the channel layer (i.e. the Mn0.05Ge0.95 quantum dots was modulated as a function of the hole concentration. Finally, a theoretical model based upon the formation of magnetic polarons has been proposed to explain the observed field controlled ferromagnetism.

  14. High Tc superconducting nonlinear inductance and quick response magnetic sensor devices

    International Nuclear Information System (INIS)

    Uchiyama, T.; Mohri, K.; Ozeki, A.; Shibata, T.

    1990-01-01

    A flux penetration model considering the demagnetizing effect is presented in order to analyze the nonlinear inductance characteristics for HTcSC. Various quick response magnetic devices such as modulators, magnetic switches and magnetic sensors were constructed. The magnetizing frequency can be set up more than 10 MHz which is difficult to achieve with the conventional ferromagnetic bulk cores. The cut-off frequency of 1.6 MHz was obtained for the sensors using the HTcSC cores at a magnetizing frequency of 11.5 MHz

  15. Electronic structure study of wide band gap magnetic semiconductor (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} nanocrystals in paramagnetic and ferromagnetic phases

    Energy Technology Data Exchange (ETDEWEB)

    Dwivedi, G. D.; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L. [Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Joshi, Amish G. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Kumar, Shiv; Ghosh, A. K. [Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Chatterjee, Sandip, E-mail: schatterji.app@iitbhu.ac.in [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2016-04-25

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} near Fermi-level. XMCD results indicate that Mn{sup 3+} and Mn{sup 4+} spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below T{sub C}. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  16. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  17. High-Tc SNS Junctions: A New Generation of Proximity-Coupled Josephson Devices

    Science.gov (United States)

    Kleinsasser, A. W.

    1997-01-01

    This paper reviews this evolution of proximity - coupled Josephson jucntion from the early investigations on low temperature superconductor-normal -superconductor junctions through the introduction of hybrid superconductor-semiconductor devices and the resulting interest in mesoscopic Josephson junctions, to the recent development of high temperature devices.

  18. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  19. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  20. Room Temperature Ferromagnetic Mn:Ge(001

    Directory of Open Access Journals (Sweden)

    George Adrian Lungu

    2013-12-01

    Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

  1. Vortex properties in a strongly textured Bi(2212) high Tc superconductor

    International Nuclear Information System (INIS)

    Verhoeven, P.F.M.

    1993-08-01

    The research described in this report was aimed at obtaining more information about the behaviour of vortices in a textured type II Bi 2 Sr 2 CaCu 2 O 8 high Tc superconductor. With the neutron depolarization technique used, it is possible to determine the mean magnetic induction in the sample and the magnetic disorder in the vortex system in one measurement. If the mean induction is directed along one of the main axes, it is possible to determine the local orientation of the vortices. The vortex distribution can in first order approximation be described by the Bean-model. This model claims a constant gradient in the vortex distribution from the edges toward the centre of the superconductor. In order to investigate this gradient, a scan method is used to measure the mean induction as a function of the position in the superconductor. From these measurements a non homogeneous vortex distribution at the edges could be concluded, although it could not be determined whether the gradient of the vortex distribution near the edges is constant. In order to investigate the relaxation of the vortex distribution after a magnetic field pulse, time dependent measurements were carried out. It appeared that the relaxation of the vortex system on short time scale (ms) is not only due to flux creep, but also to a collective expulsion of vortices because of the repulsive force between the vortices which are very closely packed together right after the pulse. Large remanence (>20 Gauss) after a large applied field pulse (>1 T) was observed, perpendicular to the applied field. This perpendicular remanence was investigated as a function of time, as a function of position, as a function of temperature and as a function of the applied field pulse. These large perpendicular fields can be explained if the texture of the sample is taken into account. (orig.)

  2. Three-terminal devices of high-Tc superconductors: A status report and future challenges

    International Nuclear Information System (INIS)

    Kung, Pang-Jen; Carnegie-Mellon Univ., Pittsburgh, PA

    1992-01-01

    A study has been conducted on the recent progress of the three-terminal devices with transistor-like characteristics fabricated from the high-T c superconducting materials. This study explored the operating principles and characteristics of these devices in relation to the relevant materials and techniques. A comparison of a variety of techniques for superconducting thin film deposition will be given. This study indirates that the feasibility of fabricating hybrid devices composed of semiconductors and superconductors appear to be the key issue to push forward the applications of high-T c superconductors in microelectronics. The junction field-effect transistors with a semiconductor base controlled by the proximity effect are likely to be more manufacturable. The factors that influence the operating reliability of devices and the problems arising from integrating and packaging the devices will also be discussed

  3. Superconducting Ferromagnetic Nanodiamond.

    Science.gov (United States)

    Zhang, Gufei; Samuely, Tomas; Xu, Zheng; Jochum, Johanna K; Volodin, Alexander; Zhou, Shengqiang; May, Paul W; Onufriienko, Oleksandr; Kačmarčík, Jozef; Steele, Julian A; Li, Jun; Vanacken, Johan; Vacík, Jiri; Szabó, Pavol; Yuan, Haifeng; Roeffaers, Maarten B J; Cerbu, Dorin; Samuely, Peter; Hofkens, Johan; Moshchalkov, Victor V

    2017-06-27

    Superconductivity and ferromagnetism are two mutually antagonistic states in condensed matter. Research on the interplay between these two competing orderings sheds light not only on the cause of various quantum phenomena in strongly correlated systems but also on the general mechanism of superconductivity. Here we report on the observation of the electronic entanglement between superconducting and ferromagnetic states in hydrogenated boron-doped nanodiamond films, which have a superconducting transition temperature T c ∼ 3 K and a Curie temperature T Curie > 400 K. In spite of the high T Curie , our nanodiamond films demonstrate a decrease in the temperature dependence of magnetization below 100 K, in correspondence to an increase in the temperature dependence of resistivity. These anomalous magnetic and electrical transport properties reveal the presence of an intriguing precursor phase, in which spin fluctuations intervene as a result of the interplay between the two antagonistic states. Furthermore, the observations of high-temperature ferromagnetism, giant positive magnetoresistance, and anomalous Hall effect bring attention to the potential applications of our superconducting ferromagnetic nanodiamond films in magnetoelectronics, spintronics, and magnetic field sensing.

  4. Formation of Electron Strings in Narrow Band Polar Semiconductors

    Science.gov (United States)

    Kusmartsev, F. V.

    2000-01-01

    We show that linear electron strings may arise in polar semiconductors. A single string consists of M spinless fermions trapped by an extended polarization well of a cigar shape. Inside the string the particles are free although they interact with each other via Coulomb forces. The strings arise as a result of an electronic phase separation associated with an instability of small adiabatic polarons. We have found the length of the string which depends on dielectric constants of semiconductors. The appearance of these electron strings may have an impact on the effect of stripe formation observed in a variety of high- Tc experiments.

  5. Ferromagnetism in Gd doped ZnO nanowires: A first principles study

    KAUST Repository

    Aravindh, S. Assa

    2014-12-19

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn 48O48 nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high TC in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

  6. Ferromagnetism in Gd doped ZnO nanowires: A first principles study

    KAUST Repository

    Aravindh, S. Assa; Schwingenschlö gl, Udo; Roqan, Iman S.

    2014-01-01

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn 48O48 nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high TC in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

  7. Identification of Raman peaks of high-Tc cuprates in normal state through density of states

    International Nuclear Information System (INIS)

    Bishoyi, K.C.; Rout, G.C.; Behera, S.N.

    2007-01-01

    We present a microscopic theory to explain and identify the Raman spectral peaks of high-T c cuprates R 2-x M x CuO 4 in the normal state. We used electronic Hamiltonian prescribed by Fulde in presence of anti-ferromagnetism. Phonon interaction to the hybridization between the conduction electrons of the system and the f-electrons has been incorporated in the calculation. The phonon spectral density is calculated by the Green's function technique of Zubarev at zero wave vector and finite (room) temperature limit. The four Raman active peaks (P 1 -P 4 ) representing the electronic states of the atomic sub-systems of the cuprate system are identified by the calculated quasi-particle energy bands and electron density of states (DOS). The effect of interactions on these peaks are also explained

  8. Electrical Transport Through Tunnel Barriers and Thin Dielectric Layers and Physical Properties of the High Tc Oxide Superconductors

    Science.gov (United States)

    1990-03-26

    Josephson Tipo Emparedado con Barrera de (Nb-Si)-Amorto," PhD. Thesis, Universidad Nacional Autonoma de Mexico, May 1989. 17. E.S. Hellman, D.G...A15 Nb-Sn," Phys. Rev. B 30, p. 2590 (1984). 4. S.J. Bending, R.H. Hammond, and M.R. Beasley, "Superconductivity in the High-Tc A15 V-6a System," Bull

  9. Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

    Czech Academy of Sciences Publication Activity Database

    Haigh, J.A.; Ciccarelli, C.; Betz, A.C.; Irvine, A.; Novák, Vít; Jungwirth, Tomáš; Wunderlich, Joerg

    2015-01-01

    Roč. 91, č. 14 (2015), , "140409-1"-"140409-5" ISSN 1098-0121 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : ferromagnetic semiconductors * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  10. Infrared conductivity of metallic (III, Mn)V ferromagnets

    Czech Academy of Sciences Publication Activity Database

    Sinova, J.; Jungwirth, Tomáš; Yang, E. S. R.; MacDonald, A. H.

    2002-01-01

    Roč. 66, č. 4 (2002), s. 041202-1-041202-4 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * infrared conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  11. Rise and fall of ferromagnetism in O-irradiated Al2O3 single crystals

    International Nuclear Information System (INIS)

    Li, Qiang; Xu, Juping; Liu, Jiandang; Du, Huaijiang; Ye, Bangjiao

    2015-01-01

    In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al 2 O 3 single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al 2 O 3 crystal and form stable V Al -V Al ferromagnetic coupling at room temperature

  12. Towards novel organic high-Tc superconductors: Data mining using density of states similarity search

    Science.gov (United States)

    Geilhufe, R. Matthias; Borysov, Stanislav S.; Kalpakchi, Dmytro; Balatsky, Alexander V.

    2018-02-01

    Identifying novel functional materials with desired key properties is an important part of bridging the gap between fundamental research and technological advancement. In this context, high-throughput calculations combined with data-mining techniques highly accelerated this process in different areas of research during the past years. The strength of a data-driven approach for materials prediction lies in narrowing down the search space of thousands of materials to a subset of prospective candidates. Recently, the open-access organic materials database OMDB was released providing electronic structure data for thousands of previously synthesized three-dimensional organic crystals. Based on the OMDB, we report about the implementation of a novel density of states similarity search tool which is capable of retrieving materials with similar density of states to a reference material. The tool is based on the approximate nearest neighbor algorithm as implemented in the ANNOY library and can be applied via the OMDB web interface. The approach presented here is wide ranging and can be applied to various problems where the density of states is responsible for certain key properties of a material. As the first application, we report about materials exhibiting electronic structure similarities to the aromatic hydrocarbon p-terphenyl which was recently discussed as a potential organic high-temperature superconductor exhibiting a transition temperature in the order of 120 K under strong potassium doping. Although the mechanism driving the remarkable transition temperature remains under debate, we argue that the density of states, reflecting the electronic structure of a material, might serve as a crucial ingredient for the observed high Tc. To provide candidates which might exhibit comparable properties, we present 15 purely organic materials with similar features to p-terphenyl within the electronic structure, which also tend to have structural similarities with p

  13. Superconducting Ferromagnetic Nanodiamond

    Czech Academy of Sciences Publication Activity Database

    Zhang, G.; Samuely, T.; Xu, Z.; Jochum, J. K.; Volodin, A.; Zhou, S. Q.; May, P. W.; Onufriienko, O.; Kacmarik, J.; Steele, J. A.; Li, J.; Vanacken, J.; Vacík, Jiří; Szabo, P.; Yuan, H. F.; Roeffaers, M. B. J.; Cerbu, D.; Samuely, P.; Hofkens, J.; Moshchalkov, V.V.

    2017-01-01

    Roč. 11, č. 6 (2017), s. 5358-5366 ISSN 1936-0851 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : nanodiamond * superconductivity and ferromagnetism * spin fluctuations * giant positive magnetoresistance * anamalous Hall effect Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nano-materials (production and properties ) Impact factor: 13.942, year: 2016

  14. Impurity band Mott insulators: a new route to high Tc superconductivity

    Directory of Open Access Journals (Sweden)

    Ganapathy Baskaran

    2008-01-01

    Full Text Available Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

  15. METHODOLOGICAL NOTES: Integrating magnetism into semiconductor electronics

    Science.gov (United States)

    Zakharchenya, Boris P.; Korenev, Vladimir L.

    2005-06-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

  16. Study on magnetic separation system using high Tc superconducting bulk magnets for water purification technique

    International Nuclear Information System (INIS)

    Oka, T; Kanayama, H; Tanaka, K; Fukui, S; Ogawa, J; Sato, T; Ooizumi, M; Yamaguchi, M; Yokoyama, K; Noto, K

    2009-01-01

    The application of superconducting bulk magnets to the magnetic separation techniques has been investigated for the Mn-bearing waste water drained from the university laboratories. The research has been conducted in comparison with the electromagnets, and the cryo-cooled superconducting solenoid magnet. The separation ratios of ferrite precipitates including Mn element in the waste slurry were estimated by means of the high gradient magnetic separation method with ferromagnetic iron filters in the water channel and open gradient magnetic separation without them. As the magnetic force acting on the particles is given by the product of a magnetization of particles and a gradient of magnetic field, and a superconducting bulk magnet shows a sharp gradient of the magnetic field on the surface, the performances of the bulk magnet system were almost equivalent to those of the superconducting solenoid magnet with wide bore with respect to the magnetic separation ratios. The separation ratios for Mn have reached over 80 % for HGMS and 10 % for OGMS under the flow rates less than 3 liter/min.

  17. Zero thermal expansion and ferromagnetism in cubic Sc(1-x)M(x)F3 (M = Ga, Fe) over a wide temperature range.

    Science.gov (United States)

    Hu, Lei; Chen, Jun; Fan, Longlong; Ren, Yang; Rong, Yangchun; Pan, Zhao; Deng, Jinxia; Yu, Ranbo; Xing, Xianran

    2014-10-01

    The rare physical property of zero thermal expansion (ZTE) is intriguing because neither expansion nor contraction occurs with temperature fluctuations. Most ZTE, however, occurs below room temperature. It is a great challenge to achieve isotropic ZTE at high temperatures. Here we report the unconventional isotropic ZTE in the cubic (Sc1-xMx)F3 (M = Ga, Fe) over a wide temperature range (linear coefficient of thermal expansion (CTE), αl = 2.34 × 10(-7) K(-1), 300-900 K). Such a broad temperature range with a considerably negligible CTE has rarely been documented. The present ZTE property has been designed using the introduction of local distortions in the macroscopic cubic lattice by heterogeneous cation substitution for the Sc site. Even though the macroscopic crystallographic structure of (Sc0.85Ga0.05Fe0.1)F3 adheres to the cubic system (Pm3̅m) according to the results of X-ray diffraction, the local structure exhibits a slight rhombohedral distortion. This is confirmed by pair distribution function analysis of synchrotron radiation X-ray total scattering. This local distortion may weaken the contribution from the transverse thermal vibration of fluorine atoms to negative thermal expansion, and thus may presumably be responsible for the ZTE. In addition, the present ZTE compounds of (Sc1-xMx)F3 can be functionalized to exhibit high-Tc ferromagnetism and a narrow-gap semiconductor feature. The present study shows the possibility of obtaining ZTE materials with multifunctionality in future work.

  18. Transport measurements in superconductors: critical current of granular high TC ceramic superconductor samples

    International Nuclear Information System (INIS)

    Passos, W.A.C.

    2016-01-01

    This work presents a method to obtain critical current of granular superconductors. We have carried out transport measurements (ρxT curves and VxI curves) in a YBa_2Cu_3O_7_-_δ sample to determine critical current density of it. Some specimens reveal a 'semiconductor-like' behavior (electrical resistivity decreases with increasing temperatures above critical temperature T_c of material) competing with superconductor behavior. Due to high granular fraction of the sample, these competition is clearly noted in ρxT curves. Measurements carried out from 0 to 8500 Oe of applied field show the same behavior, and the critical current density of the samples is shown. (author)

  19. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  20. Hysteresis in conducting ferromagnets

    International Nuclear Information System (INIS)

    Schneider, Carl S.; Winchell, Stephen D.

    2006-01-01

    Maxwell's magnetic diffusion equation is solved for conducting ferromagnetic cylinders to predict a magnetic wave velocity, a time delay for flux penetration and an eddy current field, one of five fields in the linear unified field model of hysteresis. Measured Faraday voltages for a thin steel toroid are shown to be proportional to magnetic field step amplitude and decrease exponentially in time due to maximum rather than average permeability. Dynamic permeabilities are a field convolution of quasistatic permeability and the delay function from which we derive and observe square root dependence of coercivity on rate of field change

  1. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  2. Foreword: Focus on Superconductivity in Semiconductors

    Directory of Open Access Journals (Sweden)

    Yoshihiko Takano

    2008-01-01

    Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high-TC

  3. Progress in materials research and applications of high-Tc Superconductors

    International Nuclear Information System (INIS)

    Tanaka, S.

    1991-01-01

    Research on high-T c superconductivity covers most of the fields of materials science, and therefore, interdisciplinary investigations are necessary by scientists with diverse backgrounds in physics, chemistry, ceramics, metallurgy and so on. At present, after much research on the physical properties of materials, the creation of a theory of high-T c superconductivity is extremely urgent. If a theory can be successfully established, its effects must be very wide and deep. solid state physics may be transformed, and the search for new superconducting materials will be accelerated. Furthermore, many applications will be greatly advanced by understanding the phenomena of high-T c materials, and especially concepts for new electronic devices may be forthcoming. In the past, interactions between science and technology have been very clear. They sometimes resonate with each other and exhibit rapid progress in a very short period and give a big impact on society. The research and developments of high-T c superconductivity will hopefully retrace the brilliant history of the great success of the science and technology of semiconductors in the near future. The author is very optimistic about this

  4. Design and Characteristics Analysis of a Rod Type High-Tc Superconducting Fault Current Limiter through Electromagnetic Analysis

    Energy Technology Data Exchange (ETDEWEB)

    Hyun, O.B. [Korea Electric Power Research Institute, Taejeon (Korea); Lee, C.J.; Lee, S.J.; Ko, T.K. [Yonsei University, Seoul (Korea)

    2001-07-01

    The existence of a large air gaps between a High-Tc Superconducting (HTS) tube and an iron core, or between a primary winding and a HTS tube possibly causes magnetic flux leaks, resulting in undesirable voltage drops under normal operation. For this reason optimization of air gaps is essential in designing a high-Tc superconducting fault current limiter (SFCL). In this paper we performed the electromagnetic analysis for the optimization. The inductance L decreases by 20% as the hight of the winding increases from 50 to 200 mm. But, L increases from 5.6 mH to 10.5 mH as the hight of the rod changes from 150 to 400 mm. L is found to be almost constant for the air gap between 5 to 10 mm, but L decreases by 20% as the gap increases from 10 to 20 mm. The computational and experimental results will bo compared. (author). 7 refs., 8 figs., 1 tab.

  5. Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts

    DEFF Research Database (Denmark)

    Hu, C.-M.; Nitta, Junsaku; Jensen, Ane

    2001-01-01

    Ferromagnetic contacts on a high-mobility, two-dimensional electron gas (2DEG) in a narrow gap semiconductor with strong spin-orbit interaction are used to investigate spin-polarized electron transport. We demonstrate the use of magnetized contacts to preferentially inject and detect specific spi...

  6. Ferromagnet / superconductor oxide superlattices

    Science.gov (United States)

    Santamaria, Jacobo

    2006-03-01

    The growth of heterostructures combining oxide materials is a new strategy to design novel artificial multifunctional materials with interesting behaviors ruled by the interface. With the (re)discovery of colossal magnetoresistance (CMR) materials, there has been renewed interest in heterostructures involving oxide superconductors and CMR ferromagnets where ferromagnetism (F) and superconductivity (S) compete within nanometric distances from the interface. In F/S/F structures involving oxides, interfaces are especially complex and various factors like interface disorder and roughness, epitaxial strain, polarity mismatch etc., are responsible for depressed magnetic and superconducting properties at the interface over nanometer length scales. In this talk I will focus in F/S/F structures made of YBa2Cu3O7 (YBCO) and La0.7Ca0.3MnO3 (LCMO). The high degree of spin polarization of the LCMO conduction band, together with the d-wave superconductivity of the YBCO make this F/S system an adequate candidate for the search of novel spin dependent effects in transport. We show that superconductivity at the interface is depressed by various factors like charge transfer, spin injection or ferromagnetic superconducting proximity effect. I will present experiments to examine the characteristic distances of the various mechanisms of superconductivity depression. In particular, I will discuss that the critical temperature of the superconductor depends on the relative orientation of the magnetization of the F layers, giving rise to a new giant magnetoresistance effect which might be of interest for spintronic applications. Work done in collaboration with V. Peña^1, Z. Sefrioui^1, J. Garcia-Barriocanal^1, C. Visani^1, D. Arias^1, C. Leon^1 , N. Nemes^2, M. Garcia Hernandez^2, S. G. E. te Velthuis^3, A. Hoffmann^3, M. Varela^4, S. J. Pennycook^4. Work supported by MCYT MAT 2005-06024, CAM GR- MAT-0771/2004, UCM PR3/04-12399 Work at Argonne supported by the Department of Energy, Basic

  7. Ferromagnetic shape memory materials

    Science.gov (United States)

    Tickle, Robert Jay

    Ferromagnetic shape memory materials are a new class of active materials which combine the properties of ferromagnetism with those of a diffusionless, reversible martensitic transformation. These materials have been the subject of recent study due to the unusually large magnetostriction exhibited in the martensitic phase. In this thesis we report the results of experiments which characterize the magnetic and magnetomechanical properties of both austenitic and martensitic phases of ferromagnetic shape memory material Ni2MnGa. In the high temperature cubic phase, anisotropy and magnetostriction constants are determined for a range of temperatures from 50°C down to the transformation temperature, with room temperature values of K1 = 2.7 +/- 104 ergs/cm3 and lambda100 = -145 muepsilon. In the low temperature tetragonal phase, the phenomenon of field-induced variant rearrangement is shown to produce anomalous results when traditional techniques for determining anisotropy and magnetostriction properties are employed. The requirement of single variant specimen microstructure is explained, and experiments performed on such a specimen confirm a uniaxial anisotropy within each martensitic variant with anisotropy constant Ku = 2.45 x 106 ergs/cm3 and a magnetostriction constant of lambdasv = -288 +/- 73 muepsilon. A series of magnetomechanical experiments investigate the effects of microstructure bias, repeated field cycling, varying field ramp rate, applied load, and specimen geometry on the variant rearrangement phenomenon in the martensitic phase. In general, the field-induced strain is found to be a function of the variant microstructure. Experiments in which the initial microstructure is biased towards a single variant state with an applied load generate one-time strains of 4.3%, while those performed with a constant bias stress of 5 MPa generate reversible strains of 0.5% over a period of 50 cycles. An increase in the applied field ramp rate is shown to reduce the

  8. Investigation of a Mesoporous Silicon Based Ferromagnetic Nanocomposite

    Directory of Open Access Journals (Sweden)

    Roca AG

    2009-01-01

    Full Text Available Abstract A semiconductor/metal nanocomposite is composed of a porosified silicon wafer and embedded ferromagnetic nanostructures. The obtained hybrid system possesses the electronic properties of silicon together with the magnetic properties of the incorporated ferromagnetic metal. On the one hand, a transition metal is electrochemically deposited from a metal salt solution into the nanostructured silicon skeleton, on the other hand magnetic particles of a few nanometres in size, fabricated in solution, are incorporated by immersion. The electrochemically deposited nanostructures can be tuned in size, shape and their spatial distribution by the process parameters, and thus specimens with desired ferromagnetic properties can be fabricated. Using magnetite nanoparticles for infiltration into porous silicon is of interest not only because of the magnetic properties of the composite material due to the possible modification of the ferromagnetic/superparamagnetic transition but also because of the biocompatibility of the system caused by the low toxicity of both materials. Thus, it is a promising candidate for biomedical applications as drug delivery or biomedical targeting.

  9. Plenary lectures of the divisions semiconductor physics, thin films, dynamics and statistical physics, magnetism, metal physics, surface physics, low temperature physics

    International Nuclear Information System (INIS)

    Roessler, U.

    1992-01-01

    This volume contains a selection of plenary and invited lectures of the Solid State Division spring meeting of the DPG (Deutsche Physikalische Gesellschaft) 1992 in Regensburg. The constribution come mainly from five fields of the physics of condensed matter: doped fullerenes and high Tc superconductors, surfaces, time-resolved on nonlinear optics, polymer melts, and low-dimensional semiconductor systems. (orig.)

  10. A close correlation between induced ferromagnetism and oxygen deficiency in Fe doped In2O3

    International Nuclear Information System (INIS)

    Singhal, R.K.; Samariya, A.; Kumar, Sudhish; Sharma, S.C.; Xing, Y.T.; Deshpande, U.P.; Shripathi, T.; Saitovitch, E.

    2010-01-01

    We report on the reversible manipulation of room temperature ferromagnetism in Fe (5%) doped In 2 O 3 polycrystalline magnetic semiconductor. The X-ray diffraction and photoemission measurements confirm that the Fe ions are well incorporated into the lattice, substituting the In 3+ ions. The magnetization measurements show that the host In 2 O 3 has a diamagnetic ground state, while it shows weak ferromagnetism at 300 K upon Fe doping. The as-prepared sample was then sequentially annealed in hydrogen, air, vacuum and finally in air. The ferromagnetic signal shoots up by hydrogenation as well as vacuum annealing and bounces back upon re-annealing the samples in air. The sequence of ferromagnetism shows a close inter-relationship with the behavior of oxygen vacancies (V o ). The Fe ions tend to a transform from 3+ to 2+ state during the giant ferromagnetic induction, as revealed by photoemission spectroscopy. A careful characterization of the structure, purity, magnetic, and transport properties confirms that the ferromagnetism is due to neither impurities nor clusters but directly related to the oxygen vacancies. The ferromagnetism can be reversibly controlled by these vacancies while a parallel variation of carrier concentration, as revealed by resistance measurements, appears to be a side effect of the oxygen vacancy variation.

  11. Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Vašek, Petr; Svoboda, Pavel; Novák, Vít; Cukr, Miroslav; Výborný, Karel; Jurka, Vlastimil; Stuchlík, Jiří; Orlita, Milan; Maude, D. K.

    2010-01-01

    Roč. 23, č. 6 (2010), 1161-1163 ISSN 1557-1939 R&D Projects: GA AV ČR KAN400100652; GA MŠk MEB020928 Grant - others:EU EuroMagNET II(XE) Egide 19535NF Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs * anisotropic magnetoresistance * hydrogenation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.014, year: 2010

  12. Rise and fall of ferromagnetism in O-irradiated Al{sub 2}O{sub 3} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qiang [State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China); China Spallation Neutron Source, Institute of High Energy Physics, Chinese Academy of Sciences, Dongguan 523803 (China); Xu, Juping; Liu, Jiandang; Du, Huaijiang; Ye, Bangjiao, E-mail: bjye@ustc.edu.cn [State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China)

    2015-06-21

    In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al{sub 2}O{sub 3} single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al{sub 2}O{sub 3} crystal and form stable V{sub Al}-V{sub Al} ferromagnetic coupling at room temperature.

  13. Ba2NiOsO6 : A Dirac-Mott insulator with ferromagnetism near 100 K

    International Nuclear Information System (INIS)

    Feng, Hai L.; Calder, Stuart

    2016-01-01

    In this study, the ferromagnetic semiconductor Ba 2 NiOsO 6 (T mag ~ 100 K) was synthesized at 6 GPa and 1500 °C. It crystallizes into a double perovskite structure [Fm - 3m; a = 8.0428 (1) Å], where the Ni 2+ and Os 6+ ions are perfectly ordered at the perovskite B site. We show that the spin-orbit coupling of Os 6+ plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a > 21 kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te (T mag < 180 K), the spin-gapless semiconductor Mn 2 CoAl (T mag ~ 720 K), and the ferromagnetic insulators EuO (T mag ~ 70 K) and Bi 3 Cr 3 O 11 (T mag ~ 220 K). It is also qualitatively different from known ferrimagnetic insulators and semiconductors, which are characterized by an antiparallel spin arrangement. Our finding of the ferromagnetic semiconductivity of Ba 2 NiOsO 6 should increase interest in the platinum group oxides, because this alternative class of materials should be useful in the development of spintronic, quantum magnetic, and related devices.

  14. Phases and structural characteristics of high Tc superconducting oxide in (Bi, Pb)-Sr-Ca-Cu-O system

    International Nuclear Information System (INIS)

    Chen, Zuyano; Li, Zhengrong; Qian, Yitai; Zhou, Quien; Cheng, Tingzhu

    1989-01-01

    The various phases, which are responsible for variant maximum d-value including 18.5 angstrom, 15.4 angstrom, 12.2 angstrom, 6.2 angstrom, 3.2 angstrom and possible 9.1 angstrom respectively, observed in high Tc superconducting complex oxide of (Bi,Pb)-Sr-Ca-Cu-O system are reported in this paper according to the result of X-ray diffraction on platelike crystals or crystallites synthesized under different preparation conditions. The phase of tetragonal system with c=3.21 angstrom, a=3.86 angstrom is possible parent structural unit and it is of great significance to the structure constitution of various phases with large lattice parameter c and structural characteristics of superconducting oxide. In view of the above a model of two-dimension stack-up which causes a stack in variant styles along c-axis and constitute various phases with different lattice parameter c is proposed and discussed

  15. Cold texturing of prereacted high-Tc phase Bi(Pb)SrCaCuO under triaxial stresses

    International Nuclear Information System (INIS)

    Langlois, P.; Massat, H.; Suryanarayanan, R.

    1994-01-01

    The alignment of grains in isostatically precompacted samples of prereacted Bi 1.8 Pb 0.4 Sr 2.0 Ca 2.2 Cu 3.0 O 10.3+x powder has been achieved by compressive plastic deformation under isostatic pressure at room temperature. Isostatic pressures were in the range 0.1 to 1. GPa and deformation rates were led up to 57%. Prior to sintering, X-ray diffraction measurements corroborate an expected high-Tc phase purity of nearly 85% and indicate that the as-deformed samples have been textured with the c-axes parallel to the pressing direction whilst a.c. susceptibility measurements ascertain a high transition temperature around 107 K. Intergranular connection does not occur until sintering at 850 C for 80 h and measurements indicate then that the texture has been retained. Superconducting properties themselves show sensitivity to texture through anisotropy-related distinctive irreversibility lines. (orig.)

  16. Noise and conversion performance of a high-Tc superconducting Josephson junction mixer at 0.6 THz

    Science.gov (United States)

    Gao, Xiang; Du, Jia; Zhang, Ting; Guo, Yingjie Jay

    2017-11-01

    This letter presents both theoretical and experimental investigations on the noise and conversion performance of a high-Tc superconducting (HTS) step-edge Josephson-junction mixer at the frequency of 0.6 THz and operating temperatures of 20-40 K. Based on the Y-factor and U-factor methods, a double-sideband noise temperature of around 1000 K and a conversion gain of -3.5 dB were experimentally obtained at 20 K. At the temperature of 40 K, the measured mixer noise and conversion efficiency are around 2100 K and -10 dB, respectively. The experimental data are in good agreement with the numerical analysis results using the three-port model. A detailed performance comparison with other reported HTS terahertz mixers has confirmed the superior performance of our presented mixer device.

  17. A study on the development of high Tc superconducting materials and on the effects of neutron irradiation

    International Nuclear Information System (INIS)

    Won, Dong Yeon; Chang, In Soon; Lee, Jong Min

    1990-08-01

    An Ag-sheathed (Pb,Bi)SrCaCuO superconducting tape was prepared by the cold rolling and post heat treatment method. The tape shows a c-oriented texture perpendicular to the rolling direction. The aligned grain structure may be resulted from the anisotropic grain growth of the high Tc superconducting phase. The bulk (Pb,Bi)SrCaCuO samples with (a) Tc=10lK and (b) 96K were prepared by the solid state reaction method and were neutron-irradiated up to 1.5 x 10 1 8 n/cm 2 . After irradiation the zero resistance temperature(Tc) of (a) was decreased to 96K but (b) did not show any change in Tc. The critical current density of (a) also decreased from 0.75A/cm 2 but (b) was constant as 1.5 A/cm 2 after irradiation. (Author)

  18. Pseudogap and the specific heat of high Tc superconductors: a Hubbard model in a n-pole approximation

    Science.gov (United States)

    Calegari, E. J.; Lausmann, A. C.; Magalhaes, S. G.; Chaves, C. M.; Troper, A.

    2015-03-01

    In this work the specific heat of a two-dimensional Hubbard model, suitable to discuss high-Tc superconductors (HTSC), is studied taking into account hopping to first (t) and second (t2) nearest neighbors. Experimental results for the specific heat of HTSC's, for instance, the YBCO and LSCO, indicate a close relation between the pseudogap and the specific heat. In the present work, we investigate the specific heat by the Green's function method within a n-pole approximation. The specific heat is calculated on the pseudogap and on the superconducting regions. In the present scenario, the pseudogap emerges when the antiferromagnetic (AF) fluctuations become sufficiently strong. The specific heat jump coefficient Δγ decreases when the total occupation per site (nT) reaches a given value. Such behavior of Δγ indicates the presence of a pseudogap in the regime of high occupation.

  19. Analysis of High Tc Superconducting Rectangular Microstrip Patches over Ground Planes with Rectangular Apertures in Substrates Containing Anisotropic Materials

    Directory of Open Access Journals (Sweden)

    Abderraouf Messai

    2013-01-01

    Full Text Available A rigorous full-wave analysis of high Tc superconducting rectangular microstrip patch over ground plane with rectangular aperture in the case where the patch is printed on a uniaxially anisotropic substrate material is presented. The dyadic Green’s functions of the considered structure are efficiently determined in the vector Fourier transform domain. The effect of the superconductivity of the patch is taken into account using the concept of the complex resistive boundary condition. The accuracy of the analysis is tested by comparing the computed results with measurements and previously published data for several anisotropic substrate materials. Numerical results showing variation of the resonant frequency and the quality factor of the superconducting antenna with regard to operating temperature are given. Finally, the effects of uniaxial anisotropy in the substrate on the resonant frequencies of different TM modes of the superconducting microstrip antenna with rectangular aperture in the ground plane are presented.

  20. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  1. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  2. Ferromagnetic Objects Magnetovision Detection System.

    Science.gov (United States)

    Nowicki, Michał; Szewczyk, Roman

    2013-12-02

    This paper presents the application of a weak magnetic fields magnetovision scanning system for detection of dangerous ferromagnetic objects. A measurement system was developed and built to study the magnetic field vector distributions. The measurements of the Earth's field distortions caused by various ferromagnetic objects were carried out. The ability for passive detection of hidden or buried dangerous objects and the determination of their location was demonstrated.

  3. Ferromagnetic Objects Magnetovision Detection System

    Directory of Open Access Journals (Sweden)

    Michał Nowicki

    2013-12-01

    Full Text Available This paper presents the application of a weak magnetic fields magnetovision scanning system for detection of dangerous ferromagnetic objects. A measurement system was developed and built to study the magnetic field vector distributions. The measurements of the Earth’s field distortions caused by various ferromagnetic objects were carried out. The ability for passive detection of hidden or buried dangerous objects and the determination of their location was demonstrated.

  4. Non-ferromagnetic overburden casing

    Science.gov (United States)

    Vinegar, Harold J.; Harris, Christopher Kelvin; Mason, Stanley Leroy

    2010-09-14

    Systems, methods, and heaters for treating a subsurface formation are described herein. At least one system for electrically insulating an overburden portion of a heater wellbore is described. The system may include a heater wellbore located in a subsurface formation and an electrically insulating casing located in the overburden portion of the heater wellbore. The casing may include at least one non-ferromagnetic material such that ferromagnetic effects are inhibited in the casing.

  5. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  6. Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.; Boyko, Y.; Geppert, C. C.; Christie, K. D.; Stecklein, G.; Crowell, P. A., E-mail: crowell@physics.umn.edu [School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Patel, S. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Palmstrøm, C. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2014-11-24

    We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

  7. Spin-dependent transport in ferromagnet/semiconductor/ferromagnet junctions: a fully relativistic approach

    International Nuclear Information System (INIS)

    Popescu, Voicu; Ebert, Hubert; Papanikolaou, Nikolaos; Zeller, Rudolf; Dederichs, Peter H

    2004-01-01

    We present a fully relativistic generalization of the Landauer-Buettiker formalism that has been implemented within the framework of the spin-polarized relativistic screened Korringa-Kohn-Rostoker Green function method. This approach, going beyond the two-current model, supplies a more general description of the electronic transport. It is shown that the relativistic conductance can be split in terms of individual spin-diagonal and spin-off-diagonal (spin-flip) components, which allows a detailed analysis of the influence of spin-orbit-coupling-induced spin-flip processes on the spin-dependent transport. We apply our method to calculate the ballistic conductance in Fe/GaAs/Fe magnetic tunnel junctions. We find that, by removing the spin selection rules, the spin-orbit coupling strongly influences the conductance, not only qualitatively but also quantitatively, especially in the anti-parallel alignment of the magnetization in the two Fe leads

  8. Crossover from three - to two-dimensional behavior of the vortex energies in layered XY-models for high Tc superconductors

    International Nuclear Information System (INIS)

    Weber, H.; Jensen, H.J.

    1992-01-01

    We use Monte Carlo simulations of a layered XY-model to study the phase fluctuations in high Tc superconductors. A vortex-antivortex interaction dominated by a term linear in the vortex separation is found in the low temperature regime. This is in agreement with a zero temperature variational calculation. At temperature just above the 2D vortex unbinding temperature the linear term vanishes and an ordinary 2D vortex behaviour is found. This explains the finding that the High Tc superconductors show 2D properties in the vortex fluctuations responsible for the resistivity transition close to the critical temperature. (orig.)

  9. Flocking ferromagnetic colloids.

    Science.gov (United States)

    Kaiser, Andreas; Snezhko, Alexey; Aranson, Igor S

    2017-02-01

    Assemblages of microscopic colloidal particles exhibit fascinating collective motion when energized by electric or magnetic fields. The behaviors range from coherent vortical motion to phase separation and dynamic self-assembly. Although colloidal systems are relatively simple, understanding their collective response, especially under out-of-equilibrium conditions, remains elusive. We report on the emergence of flocking and global rotation in the system of rolling ferromagnetic microparticles energized by a vertical alternating magnetic field. By combing experiments and discrete particle simulations, we have identified primary physical mechanisms, leading to the emergence of large-scale collective motion: spontaneous symmetry breaking of the clockwise/counterclockwise particle rotation, collisional alignment of particle velocities, and random particle reorientations due to shape imperfections. We have also shown that hydrodynamic interactions between the particles do not have a qualitative effect on the collective dynamics. Our findings shed light on the onset of spatial and temporal coherence in a large class of active systems, both synthetic (colloids, swarms of robots, and biopolymers) and living (suspensions of bacteria, cell colonies, and bird flocks).

  10. PREFACE: Half Metallic Ferromagnets

    Science.gov (United States)

    Dowben, Peter

    2007-08-01

    Since its introduction by de Groot and colleagues in the early 1980s [1], the concept of half metallic ferromagnetism has attracted great interest. Idealized, half-metals have only one spin channel for conduction: the spin-polarized band structure exhibits metallic behavior for one spin channel, while the other spin band structure exhibits a gap at the Fermi level. Due to the gap for one spin direction, the density of states at the Fermi level has, theoretically, 100 & spin polarization. This gap in the density of states in one spin at the Fermi level, for example ↓ so N↓ (EF) = 0, also causes the resistance of that channel to go to infinity. At zero or low temperatures, the nonquasiparticle density of states (electron correlation effects), magnons and spin disorder reduce the polarization from the idealized 100 & polarization. At higher temperatures magnon-phonon coupling and irreversible compositional changes affect polarization further. Strategies for assessing and reducing the effects of finite temperatures on the polarization are now gaining attention. The controversies surrounding the polarization stability of half metallic ferromagnets are not, however, limited to the consideration of finite temperature effects alone. While many novel half metallic materials have been predicted, materials fabrication can be challenging. Defects, surface and interface segregation, and structural stability can lead to profound decreases in polarization, but can also suppress long period magnons. There is a 'delicate balance of energies required to obtain half metallic behaviour: to avoid spin flip scattering, tiny adjustments in atomic positions might occur so that a gap opens up in the other spin channel' [2]. When considering 'spintronics' devices, a common alibi for the study of half metallic systems, surfaces and interfaces become important. Free enthalpy differences between the surface and the bulk will lead to spin minority surface and interface states, as well as

  11. Enhanced room temperature ferromagnetism in antiferromagnetic NiO nanoparticles

    Directory of Open Access Journals (Sweden)

    Patta Ravikumar

    2015-08-01

    Full Text Available We report systematic investigations of structural, vibrational, resonance and magnetic properties of nanoscale NiO powders prepared by ball milling process under different milling speeds for 30 hours of milling. Structural properties revealed that both pure NiO and as-milled NiO powders exhibit face centered cubic structure, but average crystallite size decreases to around 11 nm along with significant increase in strain with increasing milling speed. Vibrational properties show the enhancement in the intensity of one-phonon longitudinal optical (LO band and disappearance of two-magnon band due to size reduction. In addition, two-phonon LO band exhibits red shift due to size-induced phonon confinement effect and surface relaxation. Pure NiO powder exhibit antiferromagnetic nature, which transforms into induced ferromagnetic after size reduction. The average magnetization at room temperature increases with decreasing the crystallite size and a maximum moment of 0.016 μB/f.u. at 12 kOe applied field and coercivity of 170 Oe were obtained for 30 hours milled NiO powders at 600 rotation per minute milling speed. The change in the magnetic properties is also supported by the vibrational properties. Thermomagnetization measurements at high temperature reveal a well-defined magnetic phase transition at high temperature (TC around 780 K due to induced ferromagnetic phase. Electron paramagnetic resonance (EPR studies reveal a good agreement between the EPR results and magnetic properties. The observed results are described on the basis of crystallite size variation, defect density, large strain, oxidation/reduction of Ni and interaction between uncompensated surfaces and particle core with lattice expansion. The obtained results suggest that nanoscale NiO powders with high TC and moderate magnetic moment at room temperature with cubic structure would be useful to expedite for spintronic devices.

  12. Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

    Science.gov (United States)

    Czeschka, F. D.; Dreher, L.; Brandt, M. S.; Weiler, M.; Althammer, M.; Imort, I.-M.; Reiss, G.; Thomas, A.; Schoch, W.; Limmer, W.; Huebl, H.; Gross, R.; Goennenwein, S. T. B.

    2011-07-01

    We systematically measured the dc voltage VISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, VISH invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

  13. Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode

    Energy Technology Data Exchange (ETDEWEB)

    Comesana, E; Aldegunde, M; GarcIa-Loureiro, A, E-mail: enrique.comesana@usc.e [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain)

    2009-11-15

    In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature T{sub C} near or over room temperature and this will facilitate the introduction of new devices that make use of the ferromagnetism effects. According to our calculations the tunneling magnetoresistance has the form TMR {proportional_to} (T{sup n}{sub C}-T{sup n}).

  14. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  15. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  16. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  17. Dynamical response of vibrating ferromagnets

    CERN Document Server

    Gaganidze, E; Ziese, M

    2000-01-01

    The resonance frequency of vibrating ferromagnetic reeds in a homogeneous magnetic field can be substantially modified by intrinsic and extrinsic field-related contributions. Searching for the physical reasons of the field-induced resonance frequency change and to study the influence of the spin glass state on it, we have measured the low-temperature magnetoelastic behavior and the dynamical response of vibrating amorphous and polycrystalline ferromagnetic ribbons. We show that the magnetoelastic properties depend strongly on the direction of the applied magnetic field. The influence of the re-entrant spin glass transition on these properties is discussed. We present clear experimental evidence that for applied fields perpendicular to the main area of the samples the behavior of ferromagnetic reeds is rather independent of the material composition and magnetic state, exhibiting a large decrease of the resonance frequency. This effect can be very well explained with a model based on the dynamical response of t...

  18. A phenomenological model for the structure-composition relationship of the high Tc cuprates based on simple chemical principles

    International Nuclear Information System (INIS)

    Alarco, J.A.; Talbot, P.C.

    2012-01-01

    A simple phenomenological model for the relationship between structure and composition of the high Tc cuprates is presented. The model is based on two simple crystal chemistry principles: unit cell doping and charge balance within unit cells. These principles are inspired by key experimental observations of how the materials accommodate large deviations from stoichiometry. Consistent explanations for significant HTSC properties can be explained without any additional assumptions while retaining valuable insight for geometric interpretation. Combining these two chemical principles with a review of Crystal Field Theory (CFT) or Ligand Field Theory (LFT), it becomes clear that the two oxidation states in the conduction planes (typically d 8 and d 9 ) belong to the most strongly divergent d-levels as a function of deformation from regular octahedral coordination. This observation offers a link to a range of coupling effects relating vibrations and spin waves through application of Hund’s rules. An indication of this model’s capacity to predict physical properties for HTSC is provided and will be elaborated in subsequent publications. Simple criteria for the relationship between structure and composition in HTSC systems may guide chemical syntheses within new material systems.

  19. Device-quality tunnel junctions on the high Tc superconductor HgBa2CuO4+δ

    International Nuclear Information System (INIS)

    Zasadzinski, J.; Chen, J.; Romano, P.; Gray, K.E.; Wagner, J.L.; Hinks, D.G.

    1995-01-01

    SIN and SIS tunnel junction devices (e.g. photon detectors, logic elements) require quasiparticle characteristics that exhibit sharp current onsets at the gap voltage and very low sub-gap conductances. Progress is reported on the development of such junctions on High Tc cuprates using mechanical point contacts. In general, these contacts display the optimum characteristics that can be obtained from HTS native-surface tunnel barriers. Most cuprates display a sub-gap conductance which monotonically increases with voltage about the minimum value at zero bias. However, tunneling data of unusually high quality have been obtained for the recently discovered Hg-based cuprate, HgBa 2 CuO 4 (T c =96K). SIS' tunneling data using a Nb tip are presented which exhibit very low and flat sub-gap conductances and sharp conductance peaks as expected from a BCS density of states. These results are slightly improved over earlier published results with SIN junctions. Use of the experimental data to simulate the performance of a quasiparticle mixer demonstrates that noise temperatures approaching the quantum limit are possible for SIS and SIN mixers in the range 1-5 THz

  20. Superstrate loading effects on the resonant characteristics of high Tc superconducting circular patch printed on anisotropic materials

    Science.gov (United States)

    Bedra, Sami; Bedra, Randa; Benkouda, Siham; Fortaki, Tarek

    2017-12-01

    In this paper, the effects of both anisotropies in the substrate and superstrate loading on the resonant frequency and bandwidth of high-Tc superconducting circular microstrip patch in a substrate-superstrate configuration are investigated. A rigorous analysis is performed using a dyadic Galerkin's method in the vector Hankel transform domain. Galerkin's procedure is employed in the spectral domain where the TM and TE modes of the cylindrical cavity with magnetic side walls are used in the expansion of the disk current. The effect of the superconductivity of the patch is taken into account using the concept of the complex resistive boundary condition. London's equations and the two-fluid model of Gorter and Casimir are used in the calculation of the complex surface impedance of the superconducting circular disc. The accuracy of the analysis is tested by comparing the computed results with previously published data for several anisotropic substrate-superstrate materials. Good agreement is found among all sets of results. The numerical results obtained show that important errors can be made in the computation of the resonant frequencies and bandwidths of the superconducting resonators when substrate dielectric anisotropy, and/or superstrate anisotropy are ignored. Other theoretical results obtained show that the superconducting circular microstrip patch on anisotropic substrate-superstrate with properly selected permittivity values along the optical and the non-optical axes combined with optimally chosen structural parameters is more advantageous than the one on isotropic substrate-superstrate by exhibiting wider bandwidth characteristic.

  1. STM observations of ferromagnetic clusters

    International Nuclear Information System (INIS)

    Wawro, A.; Kasuya, A.

    1998-01-01

    Co, Fe and Ni clusters of nanometer size, deposited on silicon and graphite (highly oriented pyrolytic graphite), were observed by a scanning tunneling microscope. Deposition as well as the scanning tunneling microscope measurements were carried out in an ultrahigh vacuum system at room temperature. Detailed analysis of Co cluster height was done with the scanning tunneling microscope equipped with a ferromagnetic tip in a magnetic field up to 70 Oe. It is found that bigger clusters (few nanometers in height) exhibit a dependence of their apparent height on applied magnetic field. We propose that such behaviour originates from the ferromagnetic ordering of cluster and associate this effect to spin polarized tunneling. (author)

  2. Semiconductors put spin in spintronics

    International Nuclear Information System (INIS)

    Weiss, Dieter

    2000-01-01

    Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

  3. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  4. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  5. Ferromagnetic Swimmers - Devices and Applications

    Science.gov (United States)

    Hamilton, Joshua; Petrov, Peter; Winlove, C. Peter; Gilbert, Andrew; Bryan, Matthew; Ogrin, Feodor

    2017-11-01

    Microscopic swimming devices hold promise for radically new applications in lab-on-a-chip and microfluidic technology, diagnostics and drug delivery etc. We propose a new class of autonomous ferromagnetic swimming devices, actuated and controlled solely by an oscillating magnetic field. Experimentally, these devices (3.6 mm) are based on a pair of interacting ferromagnetic particles of different size and different anisotropic properties joined by an elastic link and actuated by an external time-dependent magnetic field. The net motion is generated through a combination of dipolar interparticle gradient forces, time-dependent torque and hydrodynamic coupling. We investigate the dynamic performance of a prototype (3.6 mm) of the ferromagnetic swimmer in fluids of different viscosity as a function of the external field parameters and demonstrate stable propulsion over a wide range of Reynolds numbers. Manipulation of the external magnetic field resulted in robust control over the speed and direction of propulsion. We also demonstrate our ferromagnetic swimmer working as a macroscopic prototype of a microfluidic pump. By physically tethering the swimmer, instead of swimming, the swimmer generates a directional flow of liquid around itself.

  6. Magnetic and electronic properties of half-metallic ferromagnetic Mn-stabilised zirconia

    Energy Technology Data Exchange (ETDEWEB)

    Maznichenko, Igor; Daene, Markus; Hergert, Wolfram; Mertig, Ingrid [Martin-Luther-Univ. Halle-Wittenberg, Inst. Phys., 06099 Halle (Germany); Ernst, Arthur; Ostanin, Sergey; Sandratskii, Leonid; Bruno, Patrick [Max-Planck-Inst. Mikrostrukturphys., Weinberg 2, 06120 Halle (Germany); Bergqvist, Lars [Dept. Phys., Uppsala Univ., Box 530, 751 21 Uppsala (Sweden); Hughes, Ian; Staunton, Julie [Dept. Phys., Univ. Warwick, Coventry CV4 7AL (United Kingdom); Kudrnovsky, Josef [Max-Planck-Inst. Mikrostrukturphys., Weinberg 2, 06120 Halle (Germany); Inst. Phys., Acad. Sci. of the Czech Republic, Na Slovance 2, 18221 Prague (Czech Republic)

    2007-07-01

    The investigations of the manganese stabilised cubic zirconia (Mn-SZ) show that this dilute magnetic semiconductors possess unique magnetic properties. Based on ab-initio electronic structure calculations which include the effects of thermally excited magnetic fluctuations, the autors predict Mn-SZ to be ferromagnetic for a wide range of Mn concentration up to high T{sub C}. It was found that this material, which is well known both as a diamond imitation and as a catalyst, is halfmetallic with majority and minority spin states of the Mn impurities lying in the wide band gap of zirconia. The high T{sub C} ferromagnetism is robust against oxygen vacancies and against the distribution of Mn impurities on the Zr fcc sublattice. This work responds to the question concerning the key electronic and structure factors behind an optimal doping. The autors propose this stable half-metallic ferromagnet to be a promising candidate for future spintronics applications.

  7. Understanding the Room Temperature Ferromagnetism in GaN Nanowires with Pd Doping

    International Nuclear Information System (INIS)

    Manna, S; De, S K

    2011-01-01

    We report the first synthesis and characterization of 4d transition metal palladium-doped GaN nanowires (NWs). Room temperature ferromagnetism has been observed in high quality Vapor Liquid Solid (VLS) epitaxy grown undoped n-type GaN nanowires. It was proposed that this type of magnetism is due to defects which are not observed in Bulk GaN because of large formation energy of defects in bulk GaN. Here we have successfully doped 4d transition metal Pd in GaN NWs. We find fairly strong and long-range ferromagnetic coupling between Pd substituted for Ga in GaN . The results suggest that 4d metals such as Pd may also be considered as candidates for ferromagnetic dopants in semiconductors.

  8. Scaling behavior of the spin pumping effect in conductive ferromagnet/platinum bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Czeschka, Franz D.; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas; Brandt, Martin S. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Imort, Inga-Mareen; Reiss, Guenter; Thomas, Andy [Fakultaet fuer Physik, Universitaet Bielefeld (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm (Germany)

    2011-07-01

    Spin pumping experiments allow to measure spin currents or the spin Hall angle. We have systematically studied the spin pumping DC voltage occurring in conjunction with ferromagnetic resonance in a series of conductive ferromagnet/platinum bilayers, made from elemental 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors. In all bilayers, we invariably observe the same DC voltage polarity. Moreover, we find that the voltage magnitude scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism, and the charge carrier type in a given ferromagnet. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect, and establish spin pumping as a generic phenomenon.

  9. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  10. Josephson junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Wild, Georg Hermann

    2012-01-01

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  11. Josephson junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wild, Georg Hermann

    2012-03-04

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  12. Energy gap of ferromagnet-superconductor bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Halterman, Klaus; Valls, Oriol T

    2003-10-15

    The excitation spectrum of clean ferromagnet-superconductor bilayers is calculated within the framework of the self-consistent Bogoliubov-de Gennes theory. Because of the proximity effect, the superconductor induces a gap in the ferromagnet spectrum, for thin ferromagnetic layers. The effect depends strongly on the exchange field in the ferromagnet. We find that as the thickness of the ferromagnetic layer increases, the gap disappears, and that its destruction arises from those quasiparticle excitations with wave vectors mainly along the interface. We discuss the influence that the interface quality and Fermi energy mismatch between the ferromagnet and superconductor have on the calculated energy gap. We also evaluate the density of states in the ferromagnet, and we find it in all cases consistent with the gap results.

  13. Half-Metallic Ferromagnetism and Stability of Transition Metal Pnictides and Chalcogenides

    Science.gov (United States)

    Liu, Bang-Gui

    It is highly desirable to explore robust half-metallic ferromagnetic materials compatible with important semiconductors for spintronic applications. A state-of-the-art full potential augmented plane wave method within the densityfunctional theory is reliable enough for this purpose. In this chapter we review theoretical research on half-metallic ferromagnetism and structural stability of transition metal pnictides and chalcogenides. We show that some zincblende transition metal pnictides are half-metallic and the half-metallic gap can be fairly wide, which is consistent with experiment. Systematic calculations reveal that zincblende phases of CrTe, CrSe, and VTe are excellent half-metallic ferromagnets. These three materials have wide half-metallic gaps, are low in total energy with respect to the corresponding ground-state phases, and, importantly, are structurally stable. Halfmetallic ferromagnetism is also found in wurtzite transition metal pnictides and chalcogenides and in transition-metal doped semiconductors as well as deformed structures. Some of these half-metallic materials could be grown epitaxially in the form of ultrathin .lms or layers suitable for real spintronic applications.

  14. The microscopic twins and their crystal phase in the high Tc Y-Ba-Cu-O and Dy-Ba-Cu-O superconductive ceramics

    International Nuclear Information System (INIS)

    Zu, Z.J.; Chen, Y.L.

    1988-01-01

    Most consider that the structure of Y-Ba- Cu-O and Dy-Ba-Cu-O stable superconductive crystals with high Tc is associated with the right-angled phase. The superconductivity is closely connected with the right-angled character of the crystalline texture; the better the right- angled character, the better the superconductivity. From statistical investigations of examples the authors have discovered that most of the Y-Ba-Cu-O and Dy-Ba-Cu-O superconductivity with high Tc ceramic crystals is in the monoclinic phase, which, consists of microscopic, lamellar, single twins. The long-columnar grains consisting of lamellar twin slabs show the optical characteristics of right-angled phase. The microscopic twinning and grain morphologies are summarized in this paper

  15. Dirac Magnons in Honeycomb Ferromagnets

    Directory of Open Access Journals (Sweden)

    Sergey S. Pershoguba

    2018-01-01

    Full Text Available The discovery of the Dirac electron dispersion in graphene [A. H. Castro Neto, et al., The Electronic Properties of Graphene, Rev. Mod. Phys. 81, 109 (2009RMPHAT0034-686110.1103/RevModPhys.81.109] led to the question of the Dirac cone stability with respect to interactions. Coulomb interactions between electrons were shown to induce a logarithmic renormalization of the Dirac dispersion. With a rapid expansion of the list of compounds and quasiparticle bands with linear band touching [T. O. Wehling, et al., Dirac Materials, Adv. Phys. 63, 1 (2014ADPHAH0001-873210.1080/00018732.2014.927109], the concept of bosonic Dirac materials has emerged. We consider a specific case of ferromagnets consisting of van der Waals-bonded stacks of honeycomb layers, e.g., chromium trihalides CrX_{3} (X=F, Cl, Br and I, that display two spin wave modes with energy dispersion similar to that for the electrons in graphene. At the single-particle level, these materials resemble their fermionic counterparts. However, how different particle statistics and interactions affect the stability of Dirac cones has yet to be determined. To address the role of interacting Dirac magnons, we expand the theory of ferromagnets beyond the standard Dyson theory [F. J. Dyson, General Theory of Spin-Wave Interactions, Phys. Rev. 102, 1217 (1956PHRVAO0031-899X10.1103/PhysRev.102.1217, F. J. Dyson, Thermodynamic Behavior of an Ideal Ferromagnet, Phys. Rev. 102, 1230 (1956PHRVAO0031-899X10.1103/PhysRev.102.1230] to the case of non-Bravais honeycomb layers. We demonstrate that magnon-magnon interactions lead to a significant momentum-dependent renormalization of the bare band structure in addition to strongly momentum-dependent magnon lifetimes. We show that our theory qualitatively accounts for hitherto unexplained anomalies in nearly half-century-old magnetic neutron-scattering data for CrBr_{3} [W. B. Yelon and R. Silberglitt, Renormalization of Large-Wave-Vector Magnons in

  16. Dirac Magnons in Honeycomb Ferromagnets

    Science.gov (United States)

    Pershoguba, Sergey S.; Banerjee, Saikat; Lashley, J. C.; Park, Jihwey; Ågren, Hans; Aeppli, Gabriel; Balatsky, Alexander V.

    2018-01-01

    The discovery of the Dirac electron dispersion in graphene [A. H. Castro Neto, et al., The Electronic Properties of Graphene, Rev. Mod. Phys. 81, 109 (2009), 10.1103/RevModPhys.81.109] led to the question of the Dirac cone stability with respect to interactions. Coulomb interactions between electrons were shown to induce a logarithmic renormalization of the Dirac dispersion. With a rapid expansion of the list of compounds and quasiparticle bands with linear band touching [T. O. Wehling, et al., Dirac Materials, Adv. Phys. 63, 1 (2014), 10.1080/00018732.2014.927109], the concept of bosonic Dirac materials has emerged. We consider a specific case of ferromagnets consisting of van der Waals-bonded stacks of honeycomb layers, e.g., chromium trihalides CrX3 (X =F , Cl, Br and I), that display two spin wave modes with energy dispersion similar to that for the electrons in graphene. At the single-particle level, these materials resemble their fermionic counterparts. However, how different particle statistics and interactions affect the stability of Dirac cones has yet to be determined. To address the role of interacting Dirac magnons, we expand the theory of ferromagnets beyond the standard Dyson theory [F. J. Dyson, General Theory of Spin-Wave Interactions, Phys. Rev. 102, 1217 (1956), 10.1103/PhysRev.102.1217, F. J. Dyson, Thermodynamic Behavior of an Ideal Ferromagnet, Phys. Rev. 102, 1230 (1956), 10.1103/PhysRev.102.1230] to the case of non-Bravais honeycomb layers. We demonstrate that magnon-magnon interactions lead to a significant momentum-dependent renormalization of the bare band structure in addition to strongly momentum-dependent magnon lifetimes. We show that our theory qualitatively accounts for hitherto unexplained anomalies in nearly half-century-old magnetic neutron-scattering data for CrBr3 [W. B. Yelon and R. Silberglitt, Renormalization of Large-Wave-Vector Magnons in Ferromagnetic CrBr3 Studied by Inelastic Neutron Scattering: Spin-Wave Correlation

  17. Exchange bias in nearly perpendicularly coupled ferromagnetic/ferromagnetic system

    International Nuclear Information System (INIS)

    Bu, K.M.; Kwon, H.Y.; Oh, S.W.; Won, C.

    2012-01-01

    Exchange bias phenomena appear not only in ferromagnetic/antiferromagnetic systems but also in ferromagnetic/ferromagnetic systems in which two layers are nearly perpendicularly coupled. We investigated the origin of the symmetry-breaking mechanism and the relationship between the exchange bias and the system's energy parameters. We compared the results of computational Monte Carlo simulations with those of theoretical model calculation. We found that the exchange bias exhibited nonlinear behaviors, including sign reversal and singularities. These complicated behaviors were caused by two distinct magnetization processes depending on the interlayer coupling strength. The exchange bias reached a maximum at the transition between the two magnetization processes. - Highlights: ► Exchange bias phenomena are found in perpendicularly coupled F/F systems. ► Exchange bias exhibits nonlinear behaviors, including sign reversal and singularities. ► These complicated behaviors were caused by two distinct magnetization processes. ► Exchange bias reached a maximum at the transition between the two magnetization processes. ► We established an equation to maximize the exchange bias in perpendicularly coupled F/F system.

  18. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

    Science.gov (United States)

    Stamopoulos, D; Aristomenopoulou, E

    2015-08-26

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  19. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  20. Epitaxial effects in thin films of high-Tc cuprates with the K2NiF4 structure

    Science.gov (United States)

    Naito, Michio; Sato, Hisashi; Tsukada, Akio; Yamamoto, Hideki

    2018-03-01

    La2-xSrxCuO4 (LSCO) and La2-xBaxCuO4 (LBCO) have been recognized as the archetype materials of "hole-doped" high-Tc superconductors. Their crystal structures are relatively simple with a small number of constituent cation elements. In addition, the doping level can be varied by the chemical substitution over a wide range enough to obtain the full spectrum of doping-dependent electronic and magnetic properties. These attractive features have dedicated many researchers to thin-film growth of LSCO and LBCO. The critical temperature (Tc) of LSCO and LBCO is sensitive to strain as manifested by a positive pressure coefficient of Tc in bulk samples. In general, films are strained if they are grown on lattice-mismatched substrates (epitaxial strain). Early attempts (before 1997) at the growth of LSCO and LBCO films resulted in depressed Tc below 30 K as they were grown on a commonly used SrTiO3 substrate (in-plane lattice parameter asub = 3.905 Å): the in-plane lattice parameters of LSCO and LBCO are ≤3.80 Å, and hence tensile epitaxial strain is introduced. The situation was changed by the use of LaSrAlO4 substrates with a slightly shorter in-plane lattice constant (asub = 3.756 Å). On LaSrAlO4 substrates, the Tc reaches 45 K in La1.85Sr0.15CuO4, 47 K in La1.85Ba0.15CuO4, and 56 K in ozone-oxidized La2CuO4+δ films, substantially higher than the Tc's of the bulk compounds. The Tc increase in La1.85Sr0.15CuO4 films on LaSrAlO4 and decrease on SrTiO3 are semi-quantitatively in accord with the phenomenological estimations based on the anisotropic strain coefficients of Tc (dTc/dεi). In this review article, we describe the growth and properties of films of cuprates having the K2NiF4 structure, mainly focusing on the increase/decrease of Tc by epitaxial strain and quasi-stable phase formation by epitaxial stabilization. We further extract the structural and/or physical parameters controlling Tc toward microscopic understanding of the variation of Tc by epitaxial strain.

  1. Effects of electric field and magnetic induction on spin injection into organic semiconductors

    International Nuclear Information System (INIS)

    Wang, Y.M.; Ren, J.F.; Yuan, X.B.; Dou, Z.T.; Hu, G.C.

    2011-01-01

    Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. -- Research highlights: → Current polarization in ferromagnetic/organic semiconductor structure is obtained. → Calculations are based on spin-drift-diffusion theory and Ohm's law. → Current polarization is enhanced by tuning magnetic induction and electric fields. → Effects of interfacial resistances and the special carriers are also discussed.

  2. Magnetic excitations in amorphous ferromagnets

    International Nuclear Information System (INIS)

    Continentino, M.A.

    The propagation of magnetic excitations in amorphous ferromagnets is studied from the point of view of the theory of random frequency modulation. It is shown that the spin waves in the hydrodynamic limit are well described by perturbation theory while the roton-like magnetic excitations with wavevector about the peak in the structure factor are not. A criterion of validity of perturbation theory is found which is identical to a narrowing condition in magnetic resonance. (author) [pt

  3. Simulation of Field Dependence of Critical Current Densities of Bulk High Tc Superconducting Materials regarding Thermally Activated Flux Motion

    Science.gov (United States)

    Santosh, M.; Naik, S. Pavan Kumar; Koblischka, M. R.

    2017-07-01

    In the upcoming generation, bulk high temperature superconductors (HTS) will play a crucial and a promising role in numerous industrial applications ranging from Maglev trains to magnetic resonance imaging, etc. Especially, the bulk HTS as permanent magnets are suitable due to the fact that they can trap magnetic fields being several orders of magnitude higher than those of the best hard ferromagnets. The bulk HTS LREBa2Cu3O7-δ (LREBCO or LRE-123, LRE: Y, Gd, etc.,) materials could obtain very powerful compact superconducting super-magnets, which can be operated at the cheaper liquid nitrogen temperature or below due to higher critical temperatures (i.e., ∼90 K). As a result, the new advanced technology can be utilized in a more attractive manner for a variety of technological and medical applications which have the capacity to revolutionize the field. An understanding of the magnetic field dependence of the critical current density (J c(H)) is important to develop better adapted materials. To achieve this goal, a variety of Jc (H) behaviours of bulk LREBCO samples were modelled regarding thermally activated flux motion. In essence, the Jc (H) curves follows a certain criterion where an exponential model is applied. However, to fit the complete Jc (H) curve of the LRE-123 samples an unique model is necessary to explain the behavior at low and high fields. The modelling of the various superconducting materials could be understood in terms of the pinning mechanisms.

  4. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  5. Efficiency of homopolar generators without ferromagnetic circuit

    International Nuclear Information System (INIS)

    Kharitonov, V.V.

    1982-01-01

    E.m.f. and weights of homopolar generators (HG) without a ferromagnetic circuit and of similar generator with a ferromagnetic circuit are compared at equal armature diameters and armature rotative speed. HG without ferromagnetic cuircuit of disk and cylinder types with hot and superconducting excitation winding are considered. Areas of the most reasonable removal of a ferromagnetic circuit in the HG layout are found. The plots of relationships between the e.m.f. and HG weight that permit to estimate the efficiency of ''nonferrite'' HG constructions are presented

  6. Half-metallic ferromagnetism in Fe-doped Zn3P2 from first-principles calculations

    International Nuclear Information System (INIS)

    Jaiganesh, G.; Jaya, S. Mathi

    2014-01-01

    Using the first-principles calculations based on the density functional theory, we have studied the magnetism and electronic structure of Fe-doped Zinc Phosphide (Zn 3 P 2 ). Our results show that the half-metallic ground state and ferromagnetic stability for the small Fe concentrations considered in our study. The stability of the doped material has been studied by calculating the heat of formation and analyzing the minimum total energies in nonmagnetic and ferromagnetic phases. A large value of the magnetic moment is obtained from our calculations and our calculation suggests that the Fe-doped Zn 3 P 2 may be a useful material in semiconductor spintronics

  7. Room temperature ferromagnetism and absorption red-shift in nitrogen-doped TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Gómez-Polo, C.; Larumbe, S.; Monge, M.

    2014-01-01

    Highlights: • N-doped TiO 2 anatase nanoparticles were obtained by sol–gel. • The nanoparticle size, controlled by the N doping, determines lattice parameters. • Correlation between room temperature ferromagnetism and absorption red-shift. • Oxygen vacancies reinforce both phenomena. • Metal transition impurities contribute to the room temperature ferromagnetism. - Abstract: In this work, room-temperature ferromagnetism and the red-shift of the optical absorption is analyzed in nitrogen doped TiO 2 semiconductor nanoparticles. The nanoparticles were synthesized by the sol–gel method using urea as the nitrogen source. Titanium Tetraisopropoxide (TTIP) was employed as the alkoxyde precursor and dissolved in ethanol. The as prepared gels were dried and calcined in air at 300 °C. Additionally, post-annealing treatments under vacuum atmosphere were performed to modify the oxygen stoichiometry of the samples. The anatase lattice parameters, analyzed by means of powder X-ray diffractometry, depend on the nanometer grain size of the nanoparticles (increase and decrease, respectively, of the tetragonal a and c lattice parameters with respect to the bulk values). The diffuse reflectance ultraviolet–visible (UV–Vis) absorbance spectra show a clear red-shift as consequence of the nitrogen and the occurrence of intragap energy levels. The samples display ferromagnetic features at room temperature that are reinforced with the nitrogen content and after the post annealings in vacuum. The results indicate a clear correlation between the room temperature ferromagnetism and the shift of the absorbance spectrum. In both phenomena, oxygen vacancies (either induced by the nitrogen doping or by the post vacuum annealings) play a dominant role. However, we conclude the existence of very low concentration of diluted transition metal impurities that determine the room ferromagnetic response (bound magnetic polaron BMP model). The contraction of the c soft axis of the

  8. Room temperature ferromagnetism and absorption red-shift in nitrogen-doped TiO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Gómez-Polo, C., E-mail: gpolo@unavarra.es [Departamento de Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Larumbe, S. [Departamento de Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Monge, M. [Departamento de Química, Universidad de la Rioja, Centro de Investigación en Síntesis Química (CISQ), Complejo Científico Tecnológico, 26006 Logroño (Spain)

    2014-11-05

    Highlights: • N-doped TiO{sub 2} anatase nanoparticles were obtained by sol–gel. • The nanoparticle size, controlled by the N doping, determines lattice parameters. • Correlation between room temperature ferromagnetism and absorption red-shift. • Oxygen vacancies reinforce both phenomena. • Metal transition impurities contribute to the room temperature ferromagnetism. - Abstract: In this work, room-temperature ferromagnetism and the red-shift of the optical absorption is analyzed in nitrogen doped TiO{sub 2} semiconductor nanoparticles. The nanoparticles were synthesized by the sol–gel method using urea as the nitrogen source. Titanium Tetraisopropoxide (TTIP) was employed as the alkoxyde precursor and dissolved in ethanol. The as prepared gels were dried and calcined in air at 300 °C. Additionally, post-annealing treatments under vacuum atmosphere were performed to modify the oxygen stoichiometry of the samples. The anatase lattice parameters, analyzed by means of powder X-ray diffractometry, depend on the nanometer grain size of the nanoparticles (increase and decrease, respectively, of the tetragonal a and c lattice parameters with respect to the bulk values). The diffuse reflectance ultraviolet–visible (UV–Vis) absorbance spectra show a clear red-shift as consequence of the nitrogen and the occurrence of intragap energy levels. The samples display ferromagnetic features at room temperature that are reinforced with the nitrogen content and after the post annealings in vacuum. The results indicate a clear correlation between the room temperature ferromagnetism and the shift of the absorbance spectrum. In both phenomena, oxygen vacancies (either induced by the nitrogen doping or by the post vacuum annealings) play a dominant role. However, we conclude the existence of very low concentration of diluted transition metal impurities that determine the room ferromagnetic response (bound magnetic polaron BMP model). The contraction of the c soft axis

  9. Theory of weak localization in ferromagnetic (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Garate, I.; Sinova, J.; Jungwirth, Tomáš; MacDonald, A.

    2009-01-01

    Roč. 79, č. 15 (2009), 155702/1-155702/13 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 214499 - NAMASTE; European Commission(XE) 015728 - NANOSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : electrical conductivity * exchange interactions (electron) * ferromagnetic materials * gallium arsenide * magnetic semiconductors * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.79.155207

  10. Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

    KAUST Repository

    Li, Yangyang

    2017-12-16

    Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.

  11. Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

    KAUST Repository

    Li, Yangyang; Weng, Yakui; Yin, Xinmao; Yu, Xiaojiang; Sarath Kumar, S. R.; Wehbe, Nimer; Wu, Haijun; Alshareef, Husam N.; Pennycook, Stephen J.; Breese, Mark B. H.; Chen, Jingsheng; Dong, Shuai; Wu, Tao

    2017-01-01

    Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.

  12. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  13. Radioactive Probes on Ferromagnetic Surfaces

    CERN Multimedia

    2002-01-01

    On the (broad) basis of our studies of nonmagnetic radioactive probe atoms on magnetic surfaces and at interfaces, we propose to investigate the magnetic interaction of magnetic probe atoms with their immediate environment, in particular of rare earth (RE) elements positioned on and in ferromagnetic surfaces. The preparation and analysis of the structural properties of such samples will be performed in the UHV chamber HYDRA at the HMI/Berlin. For the investigations of the magnetic properties of RE atoms on surfaces Perturbed Angular Correlation (PAC) measurements and Mössbauer Spectroscopy (MS) in the UHV chamber ASPIC (Apparatus for Surface Physics and Interfaces at CERN) are proposed.

  14. Extraordinary Hall effect in Co implanted GaAs hybrid magnetic semiconductors

    International Nuclear Information System (INIS)

    Honda, S.; Tateishi, K.; Nawate, M.; Sakamoto, I.

    2004-01-01

    Hybrid Co/GaAs ferromagnetic semiconductors have been prepared by implantation method. In these samples, sheet resistance shows weak temperature dependence, and the extraordinary Hall effect with positive coefficient is observed. In small Co content samples, Hall resistance increases with decreasing temperature and maximum value of 3.6x10 -2 Ω is obtained at 150 K

  15. Formation of high-Tc YBa2Cu3O(7-delta) films on Y2BaCuO5 substrate

    Science.gov (United States)

    Wang, W. N.; Lu, H. B.; Lin, W. J.; Yao, P. C.; Hsu, H. E.

    1988-07-01

    High-Tc superconducting YBa2Cu3O(7-delta) films have been successfully prepared on green Y2BaCuO5 (2115) ceramic substrate. The films have been formed by RF sputtering and screen printing with post annealing at 925 C. Regarding superconducting features, the sharp resistivity drop with Tc onset around 95 K (midpoint 84 K) and 99 K (midpoint 89 K) has been observed for RF sputtered and printed films respectively. Both films show the excellent adhesion towards the 2115 substrate. Powder X-ray diffraction profiles indicate a majority of 1237 phase with preferred orientation for RF sputtered thin film.

  16. Voltage control of ferromagnetic resonance

    Directory of Open Access Journals (Sweden)

    Ziyao Zhou

    2016-06-01

    Full Text Available Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME coupling mechanism: strain/stress, interfacial charge, spin–electromagnetic (EM coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin–EM coupling and exchange coupling.

  17. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  18. Magnetic anisotropy and magnetization switching in ferromagnetic GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

    2007-07-01

    Characteristic features of semiconductor spintronics such as the anisotropic magnetoresistance or the spin-polarization of charge carriers are intimately connected with the macroscopic magnetization in a ferromagnetic semiconductor. The orientation of the magnetization is controlled by magnetic anisotropy which predominantly ar ises from crystal symmetry, sample geometry, and strain. A detailed knowledge of this anisotropy is indispensable for the design of novel spintronic devices. In this talk, angle-dependent magnetotransport is demonstrated to be an excellent tool for probing magnetic anisotropy as an alternative to the standard ferromagnetic-resonance method. Moreover, its ability to trace the movement of the magnetization vector in a variable external magnetic field makes it ideally suitable f or studying magnetization switching, a potential basic effect in future logical devices. Experimental data recorded from a variety of different GaMnAs samples a re analyzed by means of model calculations which are based on a series expansion of the resistivity tensor, a numerical minimization of the free enthalpy with respect to the magnetization orientation, and the assumption that the GaMnAs laye rs under study consist of single ferromagnetic domains.

  19. Room temperature d (0) ferromagnetism in hole doped Y2O3: widening the choice of host to tailor DMS.

    Science.gov (United States)

    Chakraborty, Brahmananda; Ramaniah, Lavanya M

    2016-08-24

    Transition metal-free-ferromagnetism in diluted magnetic semiconductors (DMS) is of much current interest in view of the search for more efficient DMS materials for spintronics applications. Our DFT results predict for the first time, that impurities from group1A (Li(+), Na(+), K(+)) doped on Y2O3 can induce a magnetic signature with a magnetic moment around 2.0 μ B per defect at hole concentrations around 1.63  ×  10(21) cm(-3), which is one order less than the critical hole density of ZnO with ferromagnetic coupling large enough to promote room temperature ferromagnetism. The induction of room temperature ferromagnetism by hole doping with an impurity atom from group 1A, which injects two holes per defect in the system, implies that the recommendation of three holes per defect given in the literature, which puts a restriction on the choice of host material and the impurity, is not a necessary criterion for hole induced room temperature ferromagnetism. DFT simulations with the generalized gradient approximation (GGA), confirmed by the more sophisticated hybrid functional, Heyd-Scuseria-Ernzerhof (HSE06), predict that the magnetic moment is mostly contributed by O atoms surrounding the impurity atom and the magnetic moment scale up with impurity concentration which is a positive indicator for practical applications. We quantitatively and extensively demonstrate through the analysis of the density of states and ferromagnetic coupling that the Stoner criterion is satisfied by pushing the Fermi level inside the valence band to activate room temperature ferromagnetism. The stability of the structure and the persistence of ferromagnetism at room temperature were demonstrated by ab initio MD simulations and computation of Curie temperature through the mean field approximation. This study widens the choice of host oxides to tailor DMS for spintronics applications.

  20. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

    Science.gov (United States)

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-01-01

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

  1. Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces

    Science.gov (United States)

    Gastaldo, Daniele; Conta, Gianluca; Coïsson, Marco; Amato, Giampiero; Tiberto, Paola; Allia, Paolo

    2018-05-01

    A method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were characterized in situ by reflection high-energy electron diffraction. The quantum dots density and equivalent radius were extracted from field emission scanning electron microscope pictures, obtained ex-situ. Magnetic characterizations were performed by superconducting quantum interference device vibrating sample magnetometry revealing that ferromagnetic order is maintained up to room temperature: two different ferromagnetic phases were identified by the analysis of the field cooled - zero field cooled measurements.

  2. Ferromagnetism and nonmetallic transport of thin-film α-FeSi(2): a stabilized metastable material.

    Science.gov (United States)

    Cao, Guixin; Singh, D J; Zhang, X-G; Samolyuk, German; Qiao, Liang; Parish, Chad; Jin, Ke; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E Andrew; Biegalski, Michael; Ward, T Z; Mandrus, David; Stocks, G M; Gai, Zheng

    2015-04-10

    A metastable phase α-FeSi_{2} was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on α-FeSi_{2} (111) thin films, while the bulk material of α-FeSi_{2} is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α-FeSi_{2} obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

  3. Measurement of magnetization of Ga1−xMnxAs by ferromagnetic resonance

    International Nuclear Information System (INIS)

    Hagmann, J.A.; Traudt, K.; Zhou, Y.Y.; Liu, X.; Dobrowolska, M.; Furdyna, J.K.

    2014-01-01

    In this paper, we extend ferromagnetic resonance (FMR) studies of thin layers of the ferromagnetic semiconductor Ga 1−x Mn x As to the analysis of the integrated intensity of the resonance in order to obtain information on the total spin in the sample directly involved in ferromagnetically-ordered magnetization. A theoretical model is proposed for the dependences of the FMR integrated intensity and linewidth on the orientation of the applied magnetic field as the field direction is varied from in-plane to normal-to-the-plane of the Ga 1−x Mn x As layer. The strain-induced magnetic anisotropy of Ga 1−x Mn x As presents a significant challenge to conventional FMR linewidth and integrated intensity models. The new model predicts that the integrated FMR intensity is proportional to the saturation magnetization M S of the sample, with the constant of proportionality varying as a function of the polar and azimuthal angles of the applied magnetic field. The angular and temperature behaviors of the integrated intensity and linewidth of the FMR predicted by the proposed model are in good qualitative agreement with measurements. - Highlights: • We extend ferromagnetic resonance to the analysis of total magnetization of thin film Ga 1−x Mn x As. • We formulate a theoretical model for FMR integrated intensity and linewidth. • The model predicts that integrated FMR intensity is proportional to magnetization. • Predictions made by the model are in good qualitative agreement with measurements

  4. Inhomogeneous superconductivity in a ferromagnet

    International Nuclear Information System (INIS)

    Kontos, T.; Aprili, M.; Lesueur, J.; Genet, F.; Boursier, R.; Grison, X.

    2003-01-01

    We have studied a new superconducting state where the condensate wave function resulting from conventional pairing, is modified by an exchange field. Superconductivity is induced into a ferromagnetic thin film (F) by the proximity effect with a superconducting reservoir (S). We observed oscillations of the superconducting order parameter induced in F as a function of the distance from the S/F interface. They originate from the finite momentum transfer provided to Cooper pairs by the splitting of the spin up and down bands. We measured the superconducting density of states in F by tunneling spectroscopy and the Josephson critical current when F is coupled with a superconducting counter-electrode. Negative values of the superconducting order parameter are revealed by capsized tunneling spectra in F and a negative Josephson coupling (π-junction)

  5. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  6. Dipolar ferromagnets and glasses (invited)

    International Nuclear Information System (INIS)

    Rosenbaum, T.F.; Wu, W.; Ellman, B.; Yang, J.; Aeppli, G.; Reich, D.H.

    1991-01-01

    What is the ground state and what are the dynamics of 10 23 randomly distributed Ising spins? We have attempted to answer these questions through magnetic susceptibility, calorimetric, and neutron scattering studies of the randomly diluted dipolar-coupled Ising magnet LiHo x Y 1-x F 4 . The material is ferromagnetic for dipole concentrations at least as low as x=0.46, with a Curie temperature obeying mean-field scaling relative to that of pure LiHoF 4 . In the dilute spin limit, an x=0.045 crystal shows very unusual glassy properties characterized by decreasing barriers to relaxation as T→0. Its properties are consistent with a single low degeneracy ground state with a large gap for excitations. A slightly more concentrated x=0.167 sample, however, supports a complex ground state with no appreciable gap, in accordance with prevailing theories of spin glasses. The underlying causes of such disparate behavior are discussed in terms of random clusters as probed by neutron studies of the x=0.167 sample. In addition to tracing the evolution of the glassy and ferromagnetic states with dipole concentration, we investigate the effects of a transverse magnetic field on the Ising spin glass, LiHo 0.167 Y 0.833 F 4 . The transverse field mixes the eigenfunctions of the ground-state Ising doublet with the otherwise inaccessible excited-state levels. We observe a rapid decrease in the characteristic relaxation times, large changes in the spectral form of the relaxation, and a depression of the spin-glass transition temperature with the addition of quantum fluctuations

  7. Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

    Science.gov (United States)

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

    2016-04-26

    Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

  8. Theory of magnetic anisotropy in III.sub.1-x./sub.Mn.sub.x./sub.V ferromagnets

    Czech Academy of Sciences Publication Activity Database

    Abolfath, M.; Jungwirth, Tomáš; Brum, J.; MacDonald, A. H.

    2001-01-01

    Roč. 63, č. 5 (2001), s. 054418-1 - 054418-14 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10; GA ČR GA202/98/0085 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * magnetic anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.070, year: 2001

  9. Preparation of Mn doped CeO_2 nanoparticles with enhanced ferromagnetism

    International Nuclear Information System (INIS)

    Ravi, S.; Winfred Shashikanth, F.

    2017-01-01

    Spherical-like CeO_2 and Mn-doped CeO_2 using 6-aminohexanoic acid as surfactant exhibit enhanced ferromagnetism. The optical absorption spectra reveal a red shift with a band gap of 2.51 eV. The mechanics of ferromagnetism and the red shift were analyzed. These results provide a promising platform for developing a dilute magnetic semiconductor in spintronics. - Highlights: • Pure and Mn-doped CeO_2 is prepared with aminohexanoic acid as capping. • They exhibit wide optical absorption with red-shift in their band gap. • Mn-doped CeO_2 nanoparticle exhibit hysteresis at room temperature. • Results were promising to use in spintronics and opto-electronics field.

  10. Preparation of Mn doped CeO{sub 2} nanoparticles with enhanced ferromagnetism

    Energy Technology Data Exchange (ETDEWEB)

    Ravi, S., E-mail: sravi@mepcoeng.ac.in; Winfred Shashikanth, F.

    2017-06-15

    Spherical-like CeO{sub 2} and Mn-doped CeO{sub 2} using 6-aminohexanoic acid as surfactant exhibit enhanced ferromagnetism. The optical absorption spectra reveal a red shift with a band gap of 2.51 eV. The mechanics of ferromagnetism and the red shift were analyzed. These results provide a promising platform for developing a dilute magnetic semiconductor in spintronics. - Highlights: • Pure and Mn-doped CeO{sub 2} is prepared with aminohexanoic acid as capping. • They exhibit wide optical absorption with red-shift in their band gap. • Mn-doped CeO{sub 2} nanoparticle exhibit hysteresis at room temperature. • Results were promising to use in spintronics and opto-electronics field.

  11. Formation of spin-polarons in the ferromagnetic Kondo lattice model away from half-filling

    International Nuclear Information System (INIS)

    Arredondo, Y; Navarro, O; Vallejo, E; Avignon, M

    2012-01-01

    Even though realistic one-dimensional experiments in the field of half-metallic semiconductors are not at hand yet, we are interested in the underlying fundamental physics. In this regard we study a one-dimensional ferromagnetic Kondo lattice model, a model in which a conduction band is coupled ferromagnetically to a background of localized d moments with coupling constant J H , and investigate the T = 0 phase diagram as a function of the antiferromagnetic interaction J between the localized moments and the band-filling n, since it has been observed that doping of the compounds has led to formation of magnetic domains. We explore the spin-polaron formation by looking at the nearest-neighbour correlation functions in the spin and charge regimes for which we use the density matrix renormalization group method, which is a highly efficient method to investigate quasi-one-dimensional strongly correlated systems. (paper)

  12. Temperature dependence of magnetically dead layers in ferromagnetic thin-films

    Directory of Open Access Journals (Sweden)

    M. Tokaç

    2017-11-01

    Full Text Available Polarized neutron reflectometry has been used to study interface magnetism and magnetic dead layers in model amorphous CoFeB:Ta alloy thin-film multilayers with Curie temperatures tuned to be below room-temperature. This allows temperature dependent variations in the effective magnetic thickness of the film to be determined at temperatures that are a significant fraction of the Curie temperature, which cannot be achieved in the material systems used for spintronic devices. In addition to variation in the effective magnetic thickness due to compositional grading at the interface with the tantalum capping layer, the key finding is that at the interface between ferromagnetic film and GaAs(001 substrate local interfacial alloying creates an additional magnetic dead-layer. The thickness of this magnetic dead-layer is temperature dependent, which may have significant implications for elevated-temperature operation of hybrid ferromagnetic metal-semiconductor spintronic devices.

  13. Room temperature ferromagnetism in nano-crystalline Co:ThO2 powders

    International Nuclear Information System (INIS)

    Bhide, M.K.; Kadam, R.M.; Godbole, S.V.; Tyagi, A.K.; Salunke, H.G.

    2012-01-01

    The major interest in dilute magnetic semiconductors (DMS's) had been directed towards the synthesis of room temperature ferromagnetic (RTF) materials for their potential applications in spintronic devices. Room temperature (RT) ferromagnetism was initially reported in Co doped TiO 2 , ZnO 2 and SnO 2 thin films and in the recent past in transition metal doped wide band gap materials. In the present paper we report the synthesis of Co doped ThO 2 nano powders by urea combustion method. The XRD characterization of 300℃ annealed samples confirmed formation of ThO 2 in the cubic phase and the average crystallite size obtained using Scherrer's formula was around 6 nm

  14. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  15. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  16. Heat dissipation due to ferromagnetic resonance in a ferromagnetic metal monitored by electrical resistance measurement

    International Nuclear Information System (INIS)

    Yamanoi, Kazuto; Yokotani, Yuki; Kimura, Takashi

    2015-01-01

    The heat dissipation due to the resonant precessional motion of the magnetization in a ferromagnetic metal has been investigated. We demonstrated that the temperature during the ferromagnetic resonance can be simply detected by the electrical resistance measurement of the Cu strip line in contact with the ferromagnetic metal. The temperature change of the Cu strip due to the ferromagnetic resonance was found to exceed 10 K, which significantly affects the spin-current transport. The influence of the thermal conductivity of the substrate on the heating was also investigated

  17. Coexistence of Superconductivity and Ferromagnetism in ...

    African Journals Online (AJOL)

    KBHEEMA

    Ferromagnetic alignment can be expected to be strongly opposed by superconductivity. .... To obtain temperature dependent of energy gap of equation (23), we used the same techniques to solve the integral .... band metal ZrZn2. Nature, 412: ...

  18. Ferromagnetic and twin domains in LCMO manganites

    International Nuclear Information System (INIS)

    Jung, G.; Markovich, V.; Mogilyanski, D.; Beek, C. van der; Mukovskii, Y.M.

    2005-01-01

    Ferromagnetic and twin domains in lightly Ca-doped La 1-x Ca x MnO 3 single crystals have been visualized and investigated by means of the magneto-optical technique. Both types of domains became visible below the Curie temperature. The dominant structures seen in applied magnetic field are associated with magneto-crystalline anisotropy and twin domains. In a marked difference to the twin domains which appear only in applied magnetic field, ferromagnetic domains show up in zero applied field and are characterized by oppositely oriented spontaneous magnetization in adjacent domains. Ferromagnetic domains take form of almost periodic, corrugated strip-like structures. The corrugation of the ferromagnetic domain pattern is enforced by the underlying twin domains

  19. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  20. Josephson tunnel junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Weides, M.P.

    2006-01-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  1. Josephson tunnel junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M.P.

    2006-07-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  2. The electronic structures and ferromagnetism of Fe-doped GaSb: The first-principle calculation study

    Science.gov (United States)

    Lin, Xue-ling; Niu, Cao-ping; Pan, Feng-chun; Chen, Huan-ming; Wang, Xu-ming

    2017-09-01

    The electronic structures and the magnetic properties of Fe doped GaSb have been investigated by the first-principles calculation based on the framework of the generalized gradient approximation (GGA) and GGA+U schemes. The calculated results indicated that Fe atoms tend to form the anti-ferromagnetic (AFM) coupling with the nearest-neighbor positions preferentially. Compared with the anti-ferromagnetic coupling, the ferromagnetic interactions occurred at the second nearest-neighbor and third nearest-neighbor sites have a bigger superiority energetically. The effect of strong electron correlation at Fe-d orbit taking on the magnetic properties predicted by GGA+U approach demonstrated that the ferromagnetic (FM) coupling between the Fe ions is even stronger in consideration of the strong electron correlation effect. The ferromagnetism in Fe doped GaSb system predicted by our investigation implied that the doping of Fe into GaSb can be as a vital routine for manufacturing the FM semiconductors with higher Curie temperature.

  3. Half-metallic ferromagnetism in Cu-doped zinc-blende ZnO from first principles study

    International Nuclear Information System (INIS)

    Li, X.F.; Zhang, J.; Xu, B.; Yao, K.L.

    2012-01-01

    Electronic structures and magnetism of Cu-doped zinc-blende ZnO have been investigated by the first-principle method based on density functional theory (DFT). The results show that Cu can induce stable ferromagnetic ground state. The magnetic moment of supercell including single Cu atom is 1.0 μ B . Electronic structure shows that Cu-doped zinc-blende ZnO is a p-type half-metallic ferromagnet. The half-metal property is mainly attribute to the crystal field splitting of Cu 3d orbital, and the ferromagnetism is dominated by the hole-mediated double exchange mechanism. Therefore, Cu-doped zinc-blende ZnO should be useful in semiconductor spintronics and other applications. - Highlights: → Magnetism of Cu-doped zinc-blende ZnO. → Cu-doped zinc-blende ZnO shows interesting half-metal character. → Total energies calculations reveal that Cu can induce ferromagnetic ground state. → Ferromagnetism dominated by the hole-mediated double exchange mechanism.

  4. Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

    Science.gov (United States)

    Niedzielski, Bethany Maria

    A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this

  5. Physical characterization and study of the electrical magnetic and thermal properties of the ceramic high Tc superconductor Y1Ba2Cu3O7-x

    International Nuclear Information System (INIS)

    Azeredo Orlando, M.T. de.

    1991-01-01

    It was built four systems for physical characterization of high Tc superconductors, with data acquisition by computer, and recent results on AC susceptibility, AC resistivity, specific heat and thermal diffusivity of the YBa 2 Cu 3 O 7-x (x ≅ 0.15) compound, in a ceramic form, could be reproduced. Our study pointed that those ceramics exhibit a preferential orientation of the grains, being the c axis of the compound parallel to the compression direction. The study of this material in the four different technics, for samples with same density and oxygen stoichiometry, has pointed also that its magnetic behavior is strongly influenced by the intergrain region. This influence can be described by the clem model for the intergrain region and by the Malozemoff proposition for the fluxoids collective behavior. (author)

  6. High-Tc copper oxide superconductors and related novel materials dedicated to prof K. A. Müller on the occasion of his 90th birthday

    CERN Document Server

    Keller, Hugo; Bianconi, Antonio

    2017-01-01

    Authored by many of the world's leading experts on high-Tc superconductivity, this volume presents a panorama of ongoing research in the field, as well as insights into related multifunctional materials. The contributions cover many different and complementary aspects of the physics and materials challenges, with an emphasis on superconducting materials that have emerged since the discovery of the cuprate superconductors, for example pnictides, MgB2, H2S and other hydrides. Special attention is also paid to interface superconductivity. In addition to superconductors, the volume also addresses materials related to polar and multifunctional ground states, another class of materials that owes its discovery to Prof. Müller's ground-breaking research on SrTiO3.

  7. Topological magnon bands in ferromagnetic star lattice

    International Nuclear Information System (INIS)

    Owerre, S A

    2017-01-01

    The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1–3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii–Moriya (DM) spin–orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases. (paper)

  8. Topological magnon bands in ferromagnetic star lattice.

    Science.gov (United States)

    Owerre, S A

    2017-05-10

    The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1-3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii-Moriya (DM) spin-orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases.

  9. Growth and characterization of high-Tc Y1Ba2Cu3O7-x superconducting thin films by chemical vapor deposition

    International Nuclear Information System (INIS)

    Feng, A.

    1992-01-01

    In chapter I, the current status of high-Tc superconductors (especially Y 1 Ba 2 Cu 3 O 7-x ), their microstructures and their unique physical properties are reviewed. An introduction to the potential and importance of those high-Tc superconductors in practical applications, especially for the application of YBCO thin films in microelectronics, is given. A general description of the common YBCO thin film fabrication and characterization techniques is also presented in this first chapter. Chapter II describes a new CVD process, temperature-controlled chemical vapor deposition (TC-CVD) for the growth of YBCO superconducting thin films on substrates of practical importance, such as sapphire (Al 2 O 3 ) and on substrates of lattice matched perovskite-type single crystals, such as LaAlO 3 . In order to verify the viability of this new CVD process the qualities of YBCO superconducting thin films were examined by various characterization methods, such as resistivity vs. temperature (R vs. T), scanning electron microscopy (SEM), X-ray diffraction (XRD), and magnetic susceptibility (x) measurements. Chapter III deals with the effect of substrate temperature on the properties of YBCO thin films made by TC-CVD. The principle objective of this study is to raise the transition temperature and critical current densities of CVD YBCO superconducting thin films. Understanding the relations between YBCO film growth process and varying substrate temperatures proved to be crucial in reaching this goal. The authors present the characterization results of YBCO thin films produced by different temperature schemes, to illustrate the importance of varying substrate temperature during the film growth. In chapter IV, the Rutherford backscattering (RBS) channeling technique is described. They have used RBS channeling to characterize the epitaxial YBCO thin film's crystallinity and lattice alignment. Transmission electron microscopy studies are also included

  10. Enhanced Curie temperature and nonvolatile switching of ferromagnetism in ultrathin (Ga,Mn)As channels

    Czech Academy of Sciences Publication Activity Database

    Stolichnov, I.; Riester, S.W.E.; Mikheev, E.; Setter, N.; Rushforth, A.W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, Tomáš; Trodahl, H.J.

    2011-01-01

    Roč. 83, č. 11 (2011), 115203/1-115203/5 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * ferroelectrics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011

  11. Ferromagnetic (Ga,Mn)As layers and nanostructures: control of magnetic anisotropy by strain engineering

    Energy Technology Data Exchange (ETDEWEB)

    Wenisch, Jan

    2008-07-01

    This work studies the fundamental connection between lattice strain and magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As. The first chapters provide a general introduction into the material system and a detailed description of the growth process by molecular beam epitaxy. A finite element simulation formalism is developed to model the strain distribution in (Ga,Mn)As nanostructures is introduced and its predictions verified by high-resolution X-ray diffraction methods. The influence of lattice strain on the magnetic anisotropy is explained by an magnetostatic model. A possible device application is described in the closing chapter. (orig.)

  12. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  13. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  14. Ultrafast magnetization dynamics in diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Morandi, O [INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg (France); Hervieux, P-A; Manfredi, G [Institut de Physique et Chimie des Materiaux de Strasbourg, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: morandi@dipmat.univpm.it

    2009-07-15

    We present a dynamical model that successfully explains the observed time evolution of the magnetization in diluted magnetic semiconductor quantum wells after weak laser excitation. Based on the pseudo-fermion formalism and a second-order many-particle expansion of the exact p-d exchange interaction, our approach goes beyond the usual mean-field approximation. It includes both the sub-picosecond demagnetization dynamics and the slower relaxation processes that restore the initial ferromagnetic order in a nanosecond timescale. In agreement with experimental results, our numerical simulations show that, depending on the value of the initial lattice temperature, a subsequent enhancement of the total magnetization may be observed within the timescale of a few hundred picoseconds.

  15. Inductive measurements of ferromagnetic resonance

    International Nuclear Information System (INIS)

    Woodward, R.C.; Kennewell, K.; Crew, D.C.; Stamps, R.L.

    2004-01-01

    Full text: The rapid advance in magnetic data storage has driven groundbreaking work in the science that underpins the properties of ferromagnetic materials at high frequencies. Recent work in this area has included the use of precession in order to produce ultra-high speed switching of magnetic elements, the generation of excited dynamical structures by application of inhomogeneous field pulses, and examination of the propagation of localized spin waves. This paper describes explorations of ultra-fast magnetization dynamics being undertaken at The University of Western Australia. We have studied the differences in magnetization dynamics in simple permalloy films when a sample is excited with sharp pulse compared to the to the dynamics generated by the application of a small amplitude continuous wave signal. We have observed a difference in the resonant frequency determined from these two excitations and will propose reasons for the different resonance responses of the system. Using the ultra-fast techniques described above we have measured dynamical properties that are significantly different to the static properties. These results are explained by the dynamical measurements being made on time scales smaller than the characteristic relaxation time. Future applications of these devices will be to examine broadening of line widths and frequency shifts associated with the excitation of magnetostatic modes, factors limiting quasiballistic reversal and differences between the dynamic and static properties of magnetic materials

  16. Non-magnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting

    Energy Technology Data Exchange (ETDEWEB)

    Scarpulla, M.A.; Stone, P.R.; Sharp, I.D.; Haller, E.E.; Dubon, O.D.; Beeman, J.W.; Yu, K.M.

    2008-02-05

    The electronic and magnetic effects of intentional compensation with non-magnetic donors are investigated in the ferromagnetic semiconductors Ga1-xMnxAs and Ga1-xMnxP synthesized using ion implantation and pulsed-laser melting (II-PLM). It is demonstrated that compensation with non-magnetic donors and MnI have similarqualitative effects on materials properties. With compensation TC decreases, resistivity increases, and stronger magnetoresistance and anomalous Hall effect attributed to skew scattering are observed. Ga1-xMnxAs can be controllably compensated with Te through a metal-insulator transition through which the magnetic and electrical properties vary continuously. The resistivity of insulating Ga1-xMnxAs:Te can be described by thermal activation to the mobility edge and simply-activated hopping transport. Ga1-xMnxP doped with S is insulating at all compositions but shows decreasing TC with compensation. The existence of a ferromagnetic insulating state in Ga1-xMnxAs:Te and Ga1-xMnxP:S having TCs of the same order as the uncompensated materials demonstrates that localized holes are effective at mediating ferromagnetism in ferromagnetic semiconductors through the percolation of ferromagnetic 'puddles' which at low temperatures.

  17. Mn-AlInN: a new diluted magnetic semiconductor

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar; Sharif, Rehana; Zhu, J.J.

    2009-01-01

    Mn ions have been incorporated into MOCVD grown Al 1-x In x N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at ∝260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T c above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

  18. Mn-AlInN: a new diluted magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul; Ali, Akbar [Quaid-i-Azam University, Advance Materials Physics Laboratory, Physics Department, Islamabad (Pakistan); Sharif, Rehana [University of Engineering and Technology, Department of Physics, Lahore (Pakistan); Zhu, J.J. [Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Beijing (China)

    2009-09-15

    Mn ions have been incorporated into MOCVD grown Al{sub 1-x}In{sub x}N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at {proportional_to}260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T{sub c} above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

  19. Ferromagnetism and interlayer exchange coupling in thin metallic films

    Energy Technology Data Exchange (ETDEWEB)

    Kienert, Jochen

    2008-07-15

    This thesis is concerned with the ferromagnetic Kondo lattice (s-d,s-f) model for film geometry. The spin-fermion interaction of this model refers to substances in which localized spins interact with mobile charge carriers like in (dilute) magnetic semiconductors, manganites, or rare-earth compounds. The carrier-mediated, indirect interaction between the localized spins comprises the long-range, oscillatory RKKY exchange interaction in the weak-coupling case and the short-range doubleexchange interaction for strong spin-fermion coupling. Both limits are recovered in this work by mapping the problem onto an effective Heisenberg model. The influence of reduced translational symmetry on the effective exchange interaction and on the magnetic properties of the ferromagnetic Kondo lattice model is investigated. Curie temperatures are obtained for different parameter constellations. The consequences of charge transfer and of lattice relaxation on the magnetic stability at the surface are considered. Since the effective exchange integrals are closely related to the electronic structure in terms of the density of states and of the kinetic energy, the discussion is based on the modifications of these quantities in the dimensionally-reduced case. The important role of spin waves for thin film and surface magnetism is demonstrated. Interlayer exchange coupling represents a particularly interesting and important manifestation of the indirect interaction among localized magnetic moments. The coupling between monatomic layers in thin films is studied in the framework of an RKKY approach. It is decisively determined by the type of in-plane and perpendicular dispersion of the charge carriers and is strongly suppressed above a critical value of the Fermi energy. Finally, the temperature-dependent magnetic stability of thin interlayer-coupled films is addressed and the conditions for a temperature-driven magnetic reorientation transition are discussed. (orig.)

  20. Correlation between electronic and magnetic properties in the IV–VI group diluted magnetic semiconductor SnMnTe

    NARCIS (Netherlands)

    Eltink, S.J.E.A.; Swagten, H.J.M.; Stoffels, N.M.J.; Jonge, de W.J.M.

    1990-01-01

    The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferromagnetic interactions are dominant. On the basis of preliminary experiments on the low temperature magnetic phases no clear evidence for re-entrant behavior can be submitted.

  1. Anisotropy-based crystalline oxide-on-semiconductor material

    Science.gov (United States)

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

  2. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  3. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  4. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  5. Room temperature ferromagnetism in magic-sized Cr-doped CdS diluted magnetic semiconducting quantum dots

    International Nuclear Information System (INIS)

    Srivastava, Punita; Kumar, Pushpendra; Singh, Kedar

    2011-01-01

    Manipulation of carrier spins in semiconductors for spintronics applications has received great attention driven by improved functionalities and higher speed operation. Doping of semiconductor nanocrystals by transition-metal ions pronounced as diluted magnetic semiconductors (DMS) has attracted tremendous attention. Such doping is, however, difficult to achieve in low-dimensional strongly quantum-confined nanostructures by conventional growth procedures. In the present case, magic-sized, pure, and Cr-doped CdS DM-QDs have been synthesized by solution phase chemistry (lyothermal method). Structural, optical, and magnetic investigation suggest an intrinsic nature of ferromagnetism with highly quantum-confined system. Optical and magnetic results of pure and doped QDs reveal major physical consequences of dopant localization within the capacity to engineer dopant-carrier exchange interactions introducing magnetic functionalities within the host semiconductor lattice. Unpaired Cr ions in Cd substitutional sites could create spin ordering and ferromagnetic coupling. The results presented herein illustrate some of the remarkable and unexpected complexities that can arise in doped QDs.

  6. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  7. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  8. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  9. Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds

    Science.gov (United States)

    Graziosi, Patrizio; Neophytou, Neophytos

    2018-02-01

    Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical top-of-the-barrier FET model, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts. Such a device could retain the spin polarization of injected electrons in the channel, the loss of which limits the operation of traditional spin transistors with non-ferromagnetic channels. We examine the operation of four material systems that are currently considered some of the most prominent known ferromagnetic semiconductors: three Heusler-type alloys (Mn2CoAl, CrVZrAl, and CoVZrAl) and one from the oxide family (NiFe2O4). We describe their band structures by using data from DFT (Density Functional Theory) calculations. We investigate under which conditions high spin polarization and significant ION/IOFF ratio, two essential requirements for the spin-MOSFET operation, are both achieved. We show that these particular Heusler channels, in their bulk form, do not have adequate bandgap to provide high ION/IOFF ratios and have small magnetoconductance compared to state-of-the-art devices. However, with confinement into ultra-narrow sizes down to a few nanometers, and by engineering their spin dependent contact resistances, they could prove promising channel materials for the realization of spin-MOSFET transistor devices that offer combined logic and memory functionalities. Although the main compounds of interest in this paper are Mn2CoAl, CrVZrAl, CoVZrAl, and NiFe2O4 alone, we expect that the insight we provide is relevant to other classes of such materials as well.

  10. Low-temperature magnetization of (Ga,Mn)As semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Mašek, Jan; Wang, K. Y.; Edmonds, K. W.; Sawicki, M.; Polini, M.; Sinova, J.; MacDonald, A. H.; Campion, R. P.; Zhao, L.X.; Farley, N.R.S.; Johal, T.K.; van der Laan, G.; Foxon, C. T.; Gallagher, B. L.

    2006-01-01

    Roč. 73, č. 16 (2006), 165205/1-165205/11 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575 Grant - others:EPSRC(GB) GR/S81407/01; FENIKS(XE) EC:G5RD-CT-2001-00535; US Department of Energy(US) DE-FG03-02ER45958 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * magnetization Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.107, year: 2006

  11. Domain walls in (Ga,Mn)As diluted magnetic semiconductor

    Czech Academy of Sciences Publication Activity Database

    Sugawara, A.; Kasai, H.; Tonomura, A.; Brown, P.D.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Zemen, Jan; Jungwirth, Tomáš

    2008-01-01

    Roč. 100, č. 4 (2008), 047202/1-047202/4 ISSN 0031-9007 R&D Projects: GA MŠk LC510; GA ČR GEFON/06/E002; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : dilute ferromagnetic semiconductor * Néel domain walls * electron holography * Landau-Lifshitz-Gilbert simulation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

  12. Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

    International Nuclear Information System (INIS)

    Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

    2013-01-01

    The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

  13. Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

    Science.gov (United States)

    Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

    2006-10-01

    Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

  14. Spectrum of ferromagnetic transition metal magnetic excitations and neutron scattering

    International Nuclear Information System (INIS)

    Kuzemskij, A.L.

    1979-01-01

    Quantum statistical models of ferromagnetic transition metals as well as methods of their solutions are reviewed. The correspondence of results on solving these models and the data on scattering thermal neutrons in ferromagnetic is discussed

  15. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  16. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  17. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  18. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  19. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  20. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  1. Ferromagnetic Josephson Junctions for Cryogenic Memory

    Science.gov (United States)

    Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

    2015-03-01

    Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

  2. Giant magnetotransmission and magnetoreflection in ferromagnetic materials

    International Nuclear Information System (INIS)

    Telegin, A.V.; Sukhorukov, Yu.P.; Loshkareva, N.N.; Mostovshchikova, E.V.; Bebenin, N.G.; Gan'shina, E.A.; Granovsky, A.B.

    2015-01-01

    We present a brief review on magnetotransmission (magnetoabsorption) and magnetoreflection of natural (unpolarized) light in ferromagnetic chromium chalcogenide spinel, manganites with perovskite structure and thin-film metallic nanostructures in the middle infrared spectral range. The magnetooptical effects under discussion are of high interest for numerous and promising applications in the infrared optoelectronics. - Highlights: • Magnetotransmission and magnetoreflection of light in ferromagnetic are presented. • The effects are greater than common magnetooptical phenomena in the infrared. • The effects may have a different origin depending on a material or spectral range. • Possible applications of the magnetotransmission and magnetoreflection are discussed

  3. Giant magnetotransmission and magnetoreflection in ferromagnetic materials

    Energy Technology Data Exchange (ETDEWEB)

    Telegin, A.V., E-mail: telegin@imp.uran.ru [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620137 Yekaterinburg (Russian Federation); Sukhorukov, Yu.P.; Loshkareva, N.N.; Mostovshchikova, E.V.; Bebenin, N.G. [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620137 Yekaterinburg (Russian Federation); Gan' shina, E.A.; Granovsky, A.B. [Moscow State University, 119991 Moscow (Russian Federation)

    2015-06-01

    We present a brief review on magnetotransmission (magnetoabsorption) and magnetoreflection of natural (unpolarized) light in ferromagnetic chromium chalcogenide spinel, manganites with perovskite structure and thin-film metallic nanostructures in the middle infrared spectral range. The magnetooptical effects under discussion are of high interest for numerous and promising applications in the infrared optoelectronics. - Highlights: • Magnetotransmission and magnetoreflection of light in ferromagnetic are presented. • The effects are greater than common magnetooptical phenomena in the infrared. • The effects may have a different origin depending on a material or spectral range. • Possible applications of the magnetotransmission and magnetoreflection are discussed.

  4. Nonlinear nuclear magnetic resonance in ferromagnets

    International Nuclear Information System (INIS)

    Nurgaliev, T.

    1988-01-01

    The properties of nonlinear nuclear magnetic resonance (NMR) have been studied theoretically by taking into account the interaction between NMR and FMR in the ferromagnets. The Landau-Lifshitz-Bloch equations, describing the electron and nuclear magnetization behaviour in ferromagnets are presented in an integral form for a weakly excited electronic system. The stationary solution of these equations has been analysed in the case of equal NMR and FMR frequencies: the criteria for the appearance of two stable dynamic states is found and the high-frequency magnetic susceptibility for these systems is investigated. 2 figs., 8 refs

  5. Magnetic pinning in superconductor-ferromagnet multilayers

    International Nuclear Information System (INIS)

    Bulaevskii, L. N.; Chudnovsky, E. M.; Maley, M. P.

    2000-01-01

    We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10 6 -10 7 A/cm 2 at high temperatures (but not very close to T c ) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics

  6. Magnetic pinning in superconductor-ferromagnet multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Bulaevskii, L. N. [Department of Physics and Astronomy, CUNY Lehman College 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Chudnovsky, E. M. [Department of Physics and Astronomy, CUNY Lehman College, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Maley, M. P. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2000-05-01

    We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10{sup 6}-10{sup 7} A/cm{sup 2} at high temperatures (but not very close to T{sub c}) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics.

  7. Itinerant Ferromagnetism in Ultracold Fermi Gases

    DEFF Research Database (Denmark)

    Heiselberg, Henning

    2012-01-01

    Itinerant ferromagnetism in cold Fermi gases with repulsive interactions is studied applying the Jastrow-Slater approximation generalized to finite polarization and temperature. For two components at zero temperature a second order transition is found at akF ≃ 0.90 compatible with QMC. Thermodyna......Itinerant ferromagnetism in cold Fermi gases with repulsive interactions is studied applying the Jastrow-Slater approximation generalized to finite polarization and temperature. For two components at zero temperature a second order transition is found at akF ≃ 0.90 compatible with QMC...

  8. Proximity effects in ferromagnet/superconductor structures

    International Nuclear Information System (INIS)

    Yu, H.L.; Sun, G.Y.; Yang, L.Y.; Xing, D.Y.

    2004-01-01

    The Nambu spinor Green's function approach is applied to study proximity effects in ferromagnet/superconductor (FM/SC) structures. They include the induced superconducting order parameter and density of states (DOS) with superconducting feature on the FM side, and spin-dependent DOS within the energy gap on the SC side. The latter indicates an appearance of gapless superconductivity and a coexistence of ferromagnetism and superconductivity in a small regime near the interface. The influence of exchange energy in FM and barrier strength at interface on the proximity effects is discussed

  9. Magnon-photon interaction in ferromagnets

    International Nuclear Information System (INIS)

    Shrivastava, K.N.

    1980-01-01

    A magnon-photon interaction for the magnetic vector of the electromagnetic wave perpendicular to the direction of magnetization in a ferromagnet is constructed with the use of Bogoliubov transformation. The resulting magnon-photon interaction is found to contain several interesting new radiation effects. The self-energy of the magnon is calculated and life times arising from the radiation scattering are predicted. The magnon frequency shift due to the radiation field is found. One of the terms arising from the one-magnon one-photon scattering gives a line width that is in reasonable agreement with the experimentally measured value of ferromagnetic resonance line width in yttrium iron garnet. (orig.)

  10. Wellhead with non-ferromagnetic materials

    Energy Technology Data Exchange (ETDEWEB)

    Hinson, Richard A [Houston, TX; Vinegar, Harold J [Bellaire, TX

    2009-05-19

    Wellheads for coupling to a heater located in a wellbore in a subsurface formation are described herein. At least one wellhead may include a heater located in a wellbore in a subsurface formation; and a wellhead coupled to the heater. The wellhead may be configured to electrically couple the heater to one or more surface electrical components. The wellhead may include at least one non-ferromagnetic material such that ferromagnetic effects are inhibited in the wellhead. Systems and methods for using such wellheads for treating a subsurface formation are described herein.

  11. Vortex dynamics in ferromagnetic/superconducting bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Cieplak, M.Z.; Adamus, Z. [Polish Acad Sci, Inst Phys, PL-02668 Warsaw, (Poland); Konczykowski, M. [CEA, DSM, DRECAM, Lab Solides Irradies, Ecole Polytechnique, CNRS-UMR 7642, F-91128 Palaiseau (France); Zhu, L.Y.; Chien, C.L. [Johns Hopkins Univ, Dept Phys and Astron, Baltimore, MD 21218 (United States)

    2008-07-01

    The dependence of vortex dynamics on the geometry of magnetic domain pattern is studied in the superconducting/ferromagnetic bilayers, in which niobium is a superconductor, and Co/Pt multilayer with perpendicular magnetic anisotropy serves as a ferromagnetic layer. Magnetic domain patterns with different density of domains per surface area and different domain size, w, are obtained for Co/Pt with different thickness of Pt. The dense patterns of domains with the size comparable to the magnetic penetration depth (w {>=} {lambda}) produce large vortex pinning and smooth vortex penetration, while less dense patterns with larger domains (w {>=}{>=} {lambda}) enhance pinning less effectively and result in flux jumps during flux motion. (authors)

  12. Temperature limited heater utilizing non-ferromagnetic conductor

    Science.gov (United States)

    Vinegar,; Harold J. , Harris; Kelvin, Christopher [Houston, TX

    2012-07-17

    A heater is described. The heater includes a ferromagnetic conductor and an electrical conductor electrically coupled to the ferromagnetic conductor. The ferromagnetic conductor is positioned relative to the electrical conductor such that an electromagnetic field produced by time-varying current flow in the ferromagnetic conductor confines a majority of the flow of the electrical current to the electrical conductor at temperatures below or near a selected temperature.

  13. Tailoring ferromagnetism in chromium-doped zinc oxide

    KAUST Repository

    Haq, Bakhtiar Ul

    2014-03-11

    The simultaneous manipulation of both charge and spin has made diluted magnetic semiconductors (DMS) a potential material for the fabrication of spintronic devices. We report DMSs based on ZnO doped with Cr in wurtzite (WZ) and zinc-blend (ZB) geometries. The injection of Cr impurities at a concentration of 6.25% has successfully tuned ferromagnetism in ZnO. To recognize the nature of magnetic interactions, two spatial configurations are investigated, where the impurity atoms are placed at minimum and maximum separation distances. The material favors the short-range magnetic coupling and has a tendency towards Cr clustering. The injection of a Cr impurity into ZnO strongly influences the electronic properties in terms of band structure, dependent on the impurity spatial distribution. It is half metallic for both structural geometries when impurity atoms have minimum separation and is metallic when they are placed far apart. Moreover, replacing Zn with Cr does not show a significant effect on the structural geometries. Our results endorse that Cr:ZnO can be efficiently used for spin-polarized transport and other spin-dependent applications in both hexagonal and cubic phases.

  14. Quantum oscillation signatures of spin-orbit interactions controlling the residual nodal bilayer-splitting in underdoped high-Tc cuprates

    Science.gov (United States)

    Harrison, Neil; Shekhter, Arkady

    2015-03-01

    We investigate the origin of the small residual nodal bilayer-splitting in the underdoped high-Tc superconductor YBa2Cu3O6+x using the results of recently published angle-resolved quantum oscillation data [Sebastian et al., Nature 511, 61 (2014)]. A crucial clue to the origin of the residual bilayer-splitting is found to be provided by the anomalously small Zeeman-splitting of some of the observed cyclotron orbits. We show that such an anomalously Zeeman-splitting (or small effective g-factor) for a subset of orbits can be explained by spin-orbit interactions, which become significant in the nodal regions as a result of the vanishing bilayer coupling. The primary effect of spin-orbit interactions is to cause quasiparticles traversing the nodal region of the Brillouin zone to undergo a spin flip. We suggest that the Rashba-like spin-orbit interactions, naturally present in bilayer systems, have the right symmetry and magnitude to give rise to a network of coupled orbits consistent with experimental observations in underdoped YBa2Cu3O6+x. This work is supported by the DOEm BES proposal LANLF100, while the magnet lab is supported by the NSF and Florida State.

  15. Wide applicability of high-Tc pairing originating from coexisting wide and incipient narrow bands in quasi-one-dimensional systems

    Science.gov (United States)

    Matsumoto, Karin; Ogura, Daisuke; Kuroki, Kazuhiko

    2018-01-01

    We study superconductivity in the Hubbard model on various quasi-one-dimensional lattices with coexisting wide and narrow bands originating from multiple sites within a unit cell, where each site corresponds to a single orbital. The systems studied are the two-leg and three-leg ladders, the diamond chain, and the crisscross ladder. These one-dimensional lattices are weakly coupled to form two-dimensional (quasi-one-dimensional) ones, and the fluctuation exchange approximation is adopted to study spin-fluctuation-mediated superconductivity. When one of the bands is perfectly flat and the Fermi level intersecting the wide band is placed in the vicinity of, but not within, the flat band, superconductivity arising from the interband scattering processes is found to be strongly enhanced owing to the combination of the light electron mass of the wide band and the strong pairing interaction due to the large density of states of the flat band. Even when the narrow band has finite bandwidth, the pairing mechanism still works since the edge of the narrow band, due to its large density of states, plays the role of the flat band. The results indicate the wide applicability of the high-Tc pairing mechanism due to coexisting wide and "incipient" narrow bands in quasi-one-dimensional systems.

  16. Ferromagnets as pure spin current generators and detectors

    Science.gov (United States)

    Qu, Danru; Miao, Bingfeng; Chien, Chia -Ling; Huang, Ssu -Yen

    2015-09-08

    Provided is a spintronics device. The spintronics can include a ferromagnetic metal layer, a positive electrode disposed on a first surface portion of the ferromagnetic metal layer, and a negative electrode disposed on a second surface portion of the ferromagnetic metal.

  17. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  18. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  19. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  20. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  1. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  2. Tunneling Conductance in Ferromagnetic Metal/Normal Metal/Spin-Singlet -Wave Ferromagnetic Superconductor Junctions

    Directory of Open Access Journals (Sweden)

    Hamidreza Emamipour

    2013-01-01

    Full Text Available In the framework of scattering theory, we study the tunneling conductance in a system including two junctions, ferromagnetic metal/normal metal/ferromagnetic superconductor, where ferromagnetic superconductor is in spin-singlet -wave pairing state. The non-magnetic normal metal is placed in the intermediate layer with the thickness ( which varies from 1 nm to 10000 nm. The interesting result which we have found is the existence of oscillations in conductance curves. The period of oscillations is independent of FS and FN exchange field while it depends on . The obtained results can serve as a useful tool to determine the kind of pairing symmetry in ferromagnetic superconductors.

  3. Griffiths-like phase in high TC perovskite La2FeReO6 prepared in a controlled reducing atmosphere

    Science.gov (United States)

    Kaipamagalath, Aswathi; Palakkal, Jasnamol P.; Varma, Manoj R.

    2018-05-01

    The perovskite La2FeReO6 is prepared by solid-state reaction method. Calcination was done in a controlled reducing atmosphere. The structure of the compound is found to be orthorhombic with Pbnm space group. From the DC magnetic studies, the transition temperature (TC) of La2FeReO6 is found to be at 729 K. A Griffiths-like phase is present in the material with ferromagnetic short-range correlations above TC up to the Griffiths temperature TG = 863 K.

  4. Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors

    International Nuclear Information System (INIS)

    Jun-Qing, Zhao; Shi-Zhu, Qiao; Zhen-Feng, Jia; Ning-Yu, Zhang; Yan-Ju, Ji; Yan-Tao, Pang; Ying, Chen; Gang, Fu

    2008-01-01

    We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices

  5. Ferromagnetism in poly(N-perfluorophenylpyrrole)

    Energy Technology Data Exchange (ETDEWEB)

    Čík, G., E-mail: gabriel.cik@stuba.sk [Department of Environmental Engineering, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia); Šeršeň, F. [Institute of Chemistry, Faculty of Natural Sciences, Comenius University, 842 15 Bratislava (Slovakia); Dlháň, L. [Department of Inorganic Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia); Zálupský, P. [Department of Organic Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia); Rapta, P. [Department of Physical Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia); Hrnčariková, K. [Department of Organic Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia); Plecenik, T. [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 842 48 Bratislava (Slovakia)

    2015-10-01

    Magnetic properties of the synthesized poly(N-perfluorophenylpyrrole) were studied. The synthesized polymer dissolves in common organic solvents. By the zero-field cooling-field cooling method (ZFC–FC) we found that at low temperatures (T{sub b}<50 K) the synthetic polymer reaches a state with prevailing ferromagnetism. The synthesized polymer retained ferromagnetism even at 300 K. The anomalous magnetic behavior was explained in terms of spin–spin interaction of triplet polarons. As can be seen from the calculated spin density of SOMO and SOMO 1 such a state arise as a consequence of 1-D spin interactions of polarons. Based on the calculated and visualized spin density (SOMO) on the polymer chain such interactions can be explained by the theory of flat-band-ferromagnetism. - Highlights: • We synthesized a new conducting polymer poly(N-perfluorophenylpyrrole). • By the ZFC–FC and EPR methods we measured magnetic properties of the prepared polymer. • We discussed stability and interactions of the polarons in triplet states. • At low temperatures the synthesized polymer reached ferromagnetism.

  6. On piezomagnetism at viscoplasticity of ferromagnetics

    International Nuclear Information System (INIS)

    Micunovic, M.

    2001-01-01

    The paper deals with viscoplasticity of ferromagnetic materials. Tensor representation is applied to a set of evolution equations comprising the plastic stretching and residual magnetization tensors. Small magnetoelastic strains of isotropic insulators are considered in detail in two special cases of finite as well as small plastic strain. A special emphasis is given to piezomagnetism effects in the case of uniaxial cycling strain (author)

  7. Magnetic profiles in ferromagnetic/superconducting superlattices.

    Energy Technology Data Exchange (ETDEWEB)

    te Velthuis, S. G. E.; Hoffmann, A.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid

    2007-02-28

    The interplay between ferromagnetism and superconductivity has been of longstanding fundamental research interest to scientists, as the competition between these generally mutually exclusive types of long-range order gives rise to a rich variety of physical phenomena. A method of studying these exciting effects is by investigating artificially layered systems, i.e. alternating deposition of superconducting and ferromagnetic thin films on a substrate, which enables a straight-forward combination of the two types of long-range order and allows the study of how they compete at the interface over nanometer length scales. While originally studies focused on low temperature superconductors interchanged with metallic ferromagnets, in recent years the scope has broadened to include superlattices of high T{sub c} superconductors and colossal magnetoresistance oxides. Creating films where both the superconducting as well as the ferromagnetic layers are complex oxide materials with similar crystal structures (Figure 1), allows the creation of epitaxial superlattices, with potentially atomically flat and ordered interfaces.

  8. Angular and linear momentum of excited ferromagnets

    NARCIS (Netherlands)

    Yan, P.; Kamra, A.; Cao, Y.; Bauer, G.E.W.

    2013-01-01

    The angular momentum vector of a Heisenberg ferromagnet with isotropic exchange interaction is conserved, while under uniaxial crystalline anisotropy the projection of the total spin along the easy axis is a constant of motion. Using Noether's theorem, we prove that these conservation laws persist

  9. Ferromagnetic hysteresis and the effective field

    NARCIS (Netherlands)

    Naus, H.W.L.

    2002-01-01

    The Jiles-Atherton model of the behavior of ferromagnetic materials determines the irreversible magnetization from the effective field by using a differential equation. This paper presents an exact, analytical solution to the equation, one displaying hysteresis. The inclusion of magnetomechanical

  10. Pseudospin anisotropy classification of quantum Hall ferromagnets

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; MacDonald, A. H.

    2000-01-01

    Roč. 63, č. 3 (2000), s. 035305-1 - 035305-9 ISSN 0163-1829 R&D Projects: GA ČR GA202/98/0085 Institutional research plan: CEZ:AV0Z1010914 Keywords : quantum Hall ferromagnets * anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.065, year: 2000

  11. Skyrmion physics in Bose-Einstein ferromagnets

    NARCIS (Netherlands)

    Al Khawaja, U.; Stoof, H.T.C.

    2001-01-01

    We show that a ferromagnetic Bose-Einstein condensate has not only line-like vortex excitations, but in general, also allows for pointlike topological excitations, i.e., skyrmions. We discuss the thermodynamic stability and the dynamic properties of these skyrmions for both spin-1/2 and

  12. Nonmonotonic critical temperature in superconductor ferromagnet bilayers

    NARCIS (Netherlands)

    Fominov, Ya. V.; Fominov, I.V.; Chtchelkatchev, N.M.; Golubov, Alexandre Avraamovitch

    2002-01-01

    The critical temperature Tc of a superconductor/ferromagnet (SF) bilayer can exhibit nonmonotonic dependence on the thickness df of the F layer. SF systems have been studied for a long time; according to the experimental situation, a ¿dirty¿ limit is often considered which implies that the mean free

  13. Magnetization dissipation in ferromagnets from scattering theory

    NARCIS (Netherlands)

    Brataas, A.; Tserkovnyak, Y.; Bauer, G.E.W.

    2011-01-01

    The magnetization dynamics of ferromagnets is often formulated in terms of the Landau-Lifshitz-Gilbert (LLG) equation. The reactive part of this equation describes the response of the magnetization in terms of effective fields, whereas the dissipative part is parametrized by the Gilbert damping

  14. Room-temperature ferromagnetic and photoluminescence ...

    Indian Academy of Sciences (India)

    the ferromagnetic nature of ITO and the strength of magnetization is superior to those of In2O3 and SnO2. However, ... ties in the spintronic devices, the materials suitable for such devices ... into suitable quartz test tubes (10mm) whose interior was enclosed in .... related to metal indium In0 with binding energy 443.6 eV was.

  15. Neutron Depolarization in Submicron Ferromagnetic Materials

    NARCIS (Netherlands)

    Rekveldt, M.Th.

    1989-01-01

    The neutron depolarization technique is based on the loss of polarization of a polarized neutron beam after transmission through ferromagnetic substances. This loss, caused by Larmor precession in individual domains, determines the mean domain size, the mean square direction cosines of the domains

  16. Lattice effects on ferromagnetism in perovskite ruthenates

    Science.gov (United States)

    Cheng, J.-G.; Zhou, J.-S.; Goodenough, John B.

    2013-01-01

    Ferromagnetism and its evolution in the orthorhombic perovskite system Sr1–xCaxRuO3 have been widely believed to correlate with structural distortion. The recent development of high-pressure synthesis of the Ba-substituted Sr1–yBayRuO3 makes it possible to study ferromagnetism over a broader phase diagram, which includes the orthorhombic Imma and the cubic phases. However, the chemical substitutions introduce the A-site disorder effect on Tc, which complicates determination of the relationship between ferromagnetism and structural distortion. By clarifying the site disorder effect on Tc in several unique series of ruthenates in which the average bond length 〈A–O〉 remains the same but the bond-length variance varies, we are able to demonstrate a parabolic curve of Tc versus mean bond length 〈A–O〉. A much higher Tc ∼ 177 K than that found in orthorhombic SrRuO3 can be obtained from the curve at a bond length 〈A–O〉, which makes the geometric factor t = 〈A–O〉/(√2〈Ru–O〉) ∼ 1. This result reveals not only that the ferromagnetism in the ruthenates is extremely sensitive to the lattice strain, but also that it has an important implication for exploring the structure–property relationship in a broad range of oxides with perovskite or a perovskite-related structure. PMID:23904477

  17. Structure and magnetism of transition-metal implanted dilute magnetic semiconductors

    CERN Document Server

    Pereira, Lino; Temst, K; Araújo, JP; Wahl, U

    The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics. Among the many types of DMS materials which have been investigated, the current research interest can be narrowed down to two main classes of materials: (1) narrow-gap III-V semiconductors, mostly GaAs and InAs, doped with Mn; (2) wide-gap oxides and nitrides doped with 3d transition metals, mostly Mn- and Co-doped ZnO and Mn-doped GaN. With a number of interesting functionalities deriving from the carrier-mediated ferromagnetism and demonstrated in various proof-of-concept devices, Mn-doped GaAs has become, among DMS materials, one of the best candidates for technological application. However, despite major developments over the last 15 years, the maximum Curie temperature (185 K) remains well below room temperature. On the other hand, wide-gap DMS materials appear to exhibit ferromagnetic behavior...

  18. Magnetic damping phenomena in ferromagnetic thin-films and multilayers

    Science.gov (United States)

    Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

    2017-11-01

    Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

  19. Ferromagnetism in with Fe implanted GaN and TiO{sub 2}; Ferromagnetismus in mit Fe implantierten GaN und TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Talut, Georg

    2009-12-15

    In the present study it was tried to create a diluted magnetic semiconductor on the basis of GaN and TiO{sub 2} by means of ion beam implantation. In most cases, by characterization of structural and magnetic properties, it was possible to prove that the ferromagnetic state is related to either spinodal decomposition or secondary phase formation. In case of Fe implanted GaN spinodal decomposition, epitaxially oriented {alpha}-Fe or {epsilon}-Fe{sub 3}N nanocrystals were found to be responsible for the ferromagnetic behavior. In addition, the formation of {gamma}-Fe clusters was observed. Similarly, in TiO{sub 2} the ferromagnetism is related to the formation of epitaxially oriented {alpha}-Fe clusters. Dependent on the process parameters during annealing experiments several various secondary phases were formed. A critical examination of the references in literature points out the significance of usage of sensitive and complementary probe techniques (like CEMS, SQUID, XRD, EXAFS), in order to be able to discuss the origin of ferromagnetism in the field of diluted magnetic semiconductors in a proper way. (orig.)

  20. Transport and quantum interference in ferromagnetic (Ga,Mn)As nanostructures; Transportuntersuchungen von Quanteninterferenzeffekten in ferromagnetischen (Ga,Mn)As Nanostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, Konrad

    2007-09-15

    In the framework of the thesis presented here for the first time quantum interference effects in ferromagnetic semiconductors could be uniquely detected. For this wire and ring structures with line widths of few nanometers were fabricated and universal conductivity fluctuations and Aharonov-Bohm oscillations at very low temperatures (<20 mK) were studied. From the analysis of the temperature and length dependence of the fluctuations knowledge about the coherence length and the scattering processes connected with this could be obtained.

  1. Location of Mn sites in ferromagnetic Ga.sub.1-x./sub.Mn.sub.x./sub. As studied by means of X-ray diffuse scattering holography

    Czech Academy of Sciences Publication Activity Database

    Kopecký, Miloš; Kub, Jiří; Bussetto, E.; Lausi, A.; Cukr, Miroslav; Novák, Vít; Olejník, Kamil; Wright, J.P.; Fábry, Jan

    2006-01-01

    Roč. 39, - (2006), s. 735-738 ISSN 0021-8898 R&D Projects: GA AV ČR IAA100100529; GA ČR GA202/04/1519 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs ferromagnetic semiconductors * x-ray holography * diffuse scattering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.495, year: 2006

  2. Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

    International Nuclear Information System (INIS)

    Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

    2011-01-01

    (Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

  3. Understanding lattice defects to influence ferromagnetic order of ZnO nanoparticles by Ni, Cu, Ce ions

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Kuldeep Chand, E-mail: dkuldeep.physics@gmail.com [Department of Physics, Panjab University, Chandigarh 160014 (India); Kotnala, R.K., E-mail: rkkotnala@gmail.com [CSIR-National Physical Laboratory, New Delhi 110012 (India)

    2017-02-15

    Future spintronics technologies based on diluted magnetic semiconductors (DMS) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. It remains unclear, however, whether the ferromagnetism in DMS is intrinsic - a precondition for spintronics - or due to dopant clustering. For this, we include a simultaneous doping from transition metal (Ni, Cu) and rare earth (Ce) ions in ZnO nanoparticles that increase the antiferromagnetic ordering to achieve high-T{sub c} ferromagnetism. Rietveld refinement of XRD patterns indicate that the dopant ions in ZnO had a wurtzite structure and the dopants, Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions, are highly influenced the lattice constants to induce lattice defects. The Ni, Cu, Ce ions in ZnO have nanoparticles formation than nanorods was observed in pure sample. FTIR involve some organic groups to induce lattice defects and the metal-oxygen bonding of Zn, Ni, Cu, Ce and O atoms to confirm wurtzite structure. Raman analysis evaluates the crystalline quality, structural disorder and defects in ZnO lattice with doping. Photoluminescence spectra have strong near-band-edge emission and visible emission bands responsible for defects due to oxygen vacancies. The energy band gap is calculated using Tauc relation. Room temperature ferromagnetism has been described due to bound magnetic polarons formation with Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions in ZnO via oxygen vacancies. The zero field and field cooling SQUID measurement confirm the strength of antiferromagnetism in ZnO. The field cooling magnetization is studied by Curie-Weiss law that include antiferromagnetic interactions up to low temperature. The XPS spectra have involve +3/+4 oxidation states of Ce ions to influence the observed ferromagnetism. - Graphical abstract: The lattice defects/vacancies attributed by Ni and Ce ions in the wurtzite ZnO structure are responsible in high T{sub c} -ferromagnetism due to long-range magnetic

  4. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  5. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  6. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  7. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  8. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  9. Li(Zn,Co,MnAs: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

    Directory of Open Access Journals (Sweden)

    Bijuan Chen

    2016-11-01

    Full Text Available We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMnyAs with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,MnAs. No ferromagnetic order occurs with single (Zn,Co or (Zn, Mn substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ∼40 K. The maximum saturation moment of the this system reached to 2.17μB/Mn, which is comparable to that of Li (Zn,MnAs. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in “111” LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,MnAs, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

  10. Mean-field theory of magnetic properties of Mn.sub.x./sub.III.sub.1-x./sub.V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Abolfath, M.; Jungwirth, Tomáš; MacDonald, A. H.

    2001-01-01

    Roč. 10, - (2001), s. 161-164 ISSN 1386-9477 Institutional research plan: CEZ:AV0Z1010914 Keywords : diluted magnetic semiconductors * ferromagnetism * magnetic anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.009, year: 2001

  11. Hole-hole correlation effects on magnetic properties of Mn.sub.x./sub.III.sub.1-x./sub.V diluted magnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Byounghak, L.; MacDonald, A. H.

    2001-01-01

    Roč. 10, - (2001), s. 153-156 ISSN 1386-9477 Institutional research plan: CEZ:AV0Z1010914 Keywords : diluted magnetic semiconductors * ferromagnetism * electronic correlation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.009, year: 2001

  12. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  13. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  14. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  15. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  16. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  17. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  18. Topological Aspects of Solitons in Ferromagnets

    International Nuclear Information System (INIS)

    Ren Jirong; Wang Jibiao; Li Ran; Xu Donghui; Duan Yishi

    2008-01-01

    Two kinds of topological soliton (skyrmion and magnetic vortex ring) in ferromagnets are studied. They have the common topological origin, a tensor H αβ = n-vector · (∂ α n-vector x ∂ β n-vector ), which describes the non-trivial distribution of local orientation of magnetization n-vector at large distances in space. The topological stability of skyrmion is protected by the winding number. Knot-like topological defect as magnetic vortex rings is also studied. On the assumption that magnetic vortex rings are geometric lines, we present their δ-function distribution in ferromagnetic materials. Furthermore, it is briefly shown that Hopf invariant is a proper topological invariant to describe the topology of magnetic vortex rings

  19. Ferromagnetism of Magnesium Oxide

    Directory of Open Access Journals (Sweden)

    Jitendra Pal Singh

    2017-11-01

    Full Text Available Magnetism without d-orbital electrons seems to be unrealistic; however, recent observations of magnetism in non-magnetic oxides, such as ZnO, HfO2, and MgO, have opened new avenues in the field of magnetism. Magnetism exhibited by these oxides is known as d° ferromagnetism, as these oxides either have completely filled or unfilled d-/f-orbitals. This magnetism is believed to occur due to polarization induced by p-orbitals. Magnetic polarization in these oxides arises due to vacancies, the excitation of trapped spin in the triplet state. The presence of vacancies at the surface and subsurface also affects the magnetic behavior of these oxides. In the present review, origins of magnetism in magnesium oxide are discussed to obtain understanding of d° ferromagnetism.

  20. Ising ferromagnet: zero-temperature dynamic evolution

    International Nuclear Information System (INIS)

    Oliveira, P M C de; Newman, C M; Sidoravicious, V; Stein, D L

    2006-01-01

    The dynamic evolution at zero temperature of a uniform Ising ferromagnet on a square lattice is followed by Monte Carlo computer simulations. The system always eventually reaches a final, absorbing state, which sometimes coincides with a ground state (all spins parallel), and sometimes does not (parallel stripes of spins up and down). We initiate here the numerical study of 'chaotic time dependence' (CTD) by seeing how much information about the final state is predictable from the randomly generated quenched initial state. CTD was originally proposed to explain how nonequilibrium spin glasses could manifest an equilibrium pure state structure, but in simpler systems such as homogeneous ferromagnets it is closely related to long-term predictability and our results suggest that CTD might indeed occur in the infinite volume limit

  1. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  2. On the critical frontiers of Potts ferromagnets

    International Nuclear Information System (INIS)

    Magalhaes, A.C.N. de; Tsallis, C.

    1981-01-01

    A conjecture concerning the critical frontiers of q- state Potts ferromagnets on d- dimensional lattices (d > 1) which generalize a recent one stated for planar lattices is formulated. The present conjecture is verified within satisfactory accuracy (exactly in some cases) for all the lattices or arrays whose critical points are known. Its use leads to the prediction of: a) a considerable amount of new approximate critical points (26 on non-planar regular lattices, some others on Husimi trees and cacti); b) approximate critical frontiers for some 3- dimensional lattices; c) the possibly asymptotically exact critical point on regular lattices in the limit d→infinite for all q>=1; d) the possibly exact critical frontier for the pure Potts model on fully anisotropic Bethe lattices; e) the possibly exact critical frontier for the general quenched random-bond Potts ferromagnet (any P(J)) on isotropic Bethe lattices. (Author) [pt

  3. The half-metallic ferromagnetism character in Be1−xVxY (Y=Se and Te) alloys: An ab-initio study

    International Nuclear Information System (INIS)

    Sajjad, M.; Manzoor, Sadia; Zhang, H.X.; Noor, N.A.; Alay-e-Abbas, S.M.; Shaukat, A.; Khenata, R.

    2015-01-01

    Ab-initio calculations for V-doped BeSe and BeTe semiconductors are performed by means of all-electrons full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. The structural properties are optimized using the Wu-Cohen generalized gradient approximation functional, whereas modified Becke and Jhonson local density approximation functional has been employed for evaluating the spin-polarized electronic and magnetic properties. Magnetic stability at various doping concentrations in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering is investigated by comparing the minimum total energies and enthalpies of formation (ΔH). Studied band structures, density of states, total energy, exchange interactions and magnetic moments manifest both alloys with half-metallic ferromagnetic behavior. Moreover, their valance bands are found to be paired ferromagnetically with V atoms. Furthermore, it was observed that the magnetic moment of vanadium atom reduces from free space charge value due to p–d hybridization which yields small magnetic moments on the Be, Se and Te sites. - Highlights: • Density functional calculations for V-doped BeSe and BeTe are performed. • V-doped BeSe and BeTe are found to be stable half-metallic ferromagnetism. • Improved electronic properties are achieved using mBJLDA which confirm HMF. • The half-metallic gaps show non-linear variation with increasing dopant concentration

  4. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  5. Fractal effects on excitations in diluted ferromagnets

    International Nuclear Information System (INIS)

    Kumar, D.

    1981-08-01

    The low energy spin-wave like excitations in diluted ferromagnets near percolation threshold are studied. For this purpose an explicit use of the fractal model for the backbone of the infinite percolating cluster due to Kirkpatrick is made. Three physical effects are identified, which cause the softening of spin-waves as the percolation point is approached. The importance of fractal effects in the calculation of density of states and the low temperature thermodynamics is pointed out. (author)

  6. Raman characterization of bulk ferromagnetic nanostructured graphite

    International Nuclear Information System (INIS)

    Pardo, Helena; Divine Khan, Ngwashi; Faccio, Ricardo; Araújo-Moreira, F.M.; Fernández-Werner, Luciana

    2012-01-01

    Raman spectroscopy was used to characterize bulk ferromagnetic graphite samples prepared by controlled oxidation of commercial pristine graphite powder. The G:D band intensity ratio, the shape and position of the 2D band and the presence of a band around 2950 cm -1 showed a high degree of disorder in the modified graphite sample, with a significant presence of exposed edges of graphitic planes as well as a high degree of attached hydrogen atoms.

  7. Magnon squeezing states in a ferromagnet

    International Nuclear Information System (INIS)

    Wang Junfeng; Cheng Ze; Ping Yunxia; Wan Jinyin; Zhang Yanmin

    2006-01-01

    In this Letter we discuss squeezing state of magnon in ferromagnet, which permits a reduction in the quantum fluctuation of the spin component to below the zero-point quantum noise level of coherent magnon states. We investigate the generation of squeezed magnon state through calculating the expectation values of spin component fluctuation. The mean field theory is introduced in dealing with the nonlinear interaction terms of Hamiltonian of magnon system

  8. α-K2AgF4: Ferromagnetism induced by the weak superexchange of different eg orbitals from the nearest neighbor Ag ions

    Science.gov (United States)

    Zhang, Xiaoli; Zhang, Guoren; Jia, Ting; Zeng, Zhi; Lin, H. Q.

    2016-05-01

    We study the abnormal ferromagnetism in α-K2AgF4, which is very similar to high-TC parent material La2CuO4 in structure. We find out that the electron correlation is very important in determining the insulating property of α-K2AgF4. The Ag(II) 4d9 in the octahedron crystal field has the t2 g 6 eg 3 electron occupation with eg x2-y2 orbital fully occupied and 3z2-r2 orbital partially occupied. The two eg orbitals are very extended indicating both of them are active in superexchange. Using the Hubbard model combined with Nth-order muffin-tin orbital (NMTO) downfolding technique, it is concluded that the exchange interaction between eg 3z2-r2 and x2-y2 from the first nearest neighbor Ag ions leads to the anomalous ferromagnetism in α-K2AgF4.

  9. α-K2AgF4: Ferromagnetism induced by the weak superexchange of different eg orbitals from the nearest neighbor Ag ions

    Directory of Open Access Journals (Sweden)

    Xiaoli Zhang

    2016-05-01

    Full Text Available We study the abnormal ferromagnetism in α-K2AgF4, which is very similar to high-TC parent material La2CuO4 in structure. We find out that the electron correlation is very important in determining the insulating property of α-K2AgF4. The Ag(II 4d9 in the octahedron crystal field has the t 2 g 6 e g 3 electron occupation with eg x2-y2 orbital fully occupied and 3z2-r2 orbital partially occupied. The two eg orbitals are very extended indicating both of them are active in superexchange. Using the Hubbard model combined with Nth-order muffin-tin orbital (NMTO downfolding technique, it is concluded that the exchange interaction between eg 3z2-r2 and x2-y2 from the first nearest neighbor Ag ions leads to the anomalous ferromagnetism in α-K2AgF4.

  10. Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

    Czech Academy of Sciences Publication Activity Database

    Stolichnov, I.; Riester, S.W.E.; Mikheev, E.; Setter, N.; Rushforth, A.W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, Tomáš; Trodahl, H.J.

    2011-01-01

    Roč. 22, č. 25 (2011), 254004/1-254004/13 ISSN 0957-4484 R&D Projects: GA MŠk LC510; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : ferroelectrics * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.979, year: 2011

  11. Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 310, - (2007), s. 1883-1888 ISSN 0304-8853 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

  12. The Kondo effect in ferromagnetic atomic contacts.

    Science.gov (United States)

    Calvo, M Reyes; Fernández-Rossier, Joaquín; Palacios, Juan José; Jacob, David; Natelson, Douglas; Untiedt, Carlos

    2009-04-30

    Iron, cobalt and nickel are archetypal ferromagnetic metals. In bulk, electronic conduction in these materials takes place mainly through the s and p electrons, whereas the magnetic moments are mostly in the narrow d-electron bands, where they tend to align. This general picture may change at the nanoscale because electrons at the surfaces of materials experience interactions that differ from those in the bulk. Here we show direct evidence for such changes: electronic transport in atomic-scale contacts of pure ferromagnets (iron, cobalt and nickel), despite their strong bulk ferromagnetism, unexpectedly reveal Kondo physics, that is, the screening of local magnetic moments by the conduction electrons below a characteristic temperature. The Kondo effect creates a sharp resonance at the Fermi energy, affecting the electrical properties of the system; this appears as a Fano-Kondo resonance in the conductance characteristics as observed in other artificial nanostructures. The study of hundreds of contacts shows material-dependent log-normal distributions of the resonance width that arise naturally from Kondo theory. These resonances broaden and disappear with increasing temperature, also as in standard Kondo systems. Our observations, supported by calculations, imply that coordination changes can significantly modify magnetism at the nanoscale. Therefore, in addition to standard micromagnetic physics, strong electronic correlations along with atomic-scale geometry need to be considered when investigating the magnetic properties of magnetic nanostructures.

  13. Tunable Magnon Weyl Points in Ferromagnetic Pyrochlores.

    Science.gov (United States)

    Mook, Alexander; Henk, Jürgen; Mertig, Ingrid

    2016-10-07

    The dispersion relations of magnons in ferromagnetic pyrochlores with Dzyaloshinskii-Moriya interaction are shown to possess Weyl points, i. e., pairs of topologically nontrivial crossings of two magnon branches with opposite topological charge. As a consequence of their topological nature, their projections onto a surface are connected by magnon arcs, thereby resembling closely Fermi arcs of electronic Weyl semimetals. On top of this, the positions of the Weyl points in reciprocal space can be tuned widely by an external magnetic field: rotated within the surface plane, the Weyl points and magnon arcs are rotated as well; tilting the magnetic field out of plane shifts the Weyl points toward the center Γ[over ¯] of the surface Brillouin zone. The theory is valid for the class of ferromagnetic pyrochlores, i. e., three-dimensional extensions of topological magnon insulators on kagome lattices. In this Letter, we focus on the (111) surface, identify candidates of established ferromagnetic pyrochlores which apply to the considered spin model, and suggest experiments for the detection of the topological features.

  14. Ferroelectricity with Ferromagnetic Moment in Orthoferrites

    Science.gov (United States)

    Tokunaga, Yusuke

    2010-03-01

    Exotic multiferroics with gigantic magnetoelectric (ME) coupling have recently been attracting broad interests from the viewpoints of both fundamental physics and possible technological application to next-generation spintronic devices. To attain a strong ME coupling, it would be preferable that the ferroelectric order is induced by the magnetic order. Nevertheless, the magnetically induced ferroelectric state with the spontaneous ferromagnetic moment is still quite rare apart from a few conical-spin multiferroics. To further explore multiferroic materials with both the strong ME coupling and spontaneous magnetization, we focused on materials with magnetic structures other than conical structure. In this talk we present that the most orthodox perovskite ferrite systems DyFeO3 and GdFeO3 have ``ferromagnetic-ferroelectric,'' i.e., genuinely multiferroic states in which weak ferromagnetic moment is induced by Dzyaloshinskii-Moriya interaction working on Fe spins and electric polarization originates from the striction due to symmetric exchange interaction between Fe and Dy (Gd) spins [1] [2]. Both materials showed large electric polarization (>0.1 μC/cm^2) and strong ME coupling. In addition, we succeeded in mutual control of magnetization and polarization with electric- and magnetic-fields in GdFeO3, and attributed the controllability to novel, composite domain wall structure. [4pt] [1] Y. Tokunaga et al., Phys. Rev. Lett. 101, 097205 (2008). [0pt] [2] Y. Tokunaga et al., Nature Mater. 8, 558 (2009).

  15. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  16. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  17. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  18. Half-metallicity and ferromagnetism of TcX (X=C, Si and Ge) in zinc blende structure

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [College of Science, Yanshan University, Qinhuangdao 066004 (China); Physics Department, Brock University, St. Catharines, ON, Canada L2S 3A1 (Canada); Xing, Yue [College of Science, Yanshan University, Qinhuangdao 066004 (China); Bose, S.K., E-mail: sbose@brocku.ca [Physics Department, Brock University, St. Catharines, ON, Canada L2S 3A1 (Canada); Zhao, Yong-Hong [Department of Physics, Sichuan Normal University, Chengdu 610068 (China)

    2013-02-15

    We report results of a first-principles density-functional study of three binary transition-metal compounds TcX (X=C, Si and Ge) in the hypothetical cubic zinc blende (ZB) structure. Our calculations are based on the full potential linear augmented plane wave (FP-LAPW) plus local orbitals method, together with generalized gradient approximation for the exchange-correlation potential. Half-metallic (HM) ferromagnetism is observed in these binary compounds for their optimized cell volumes. In the HM state, these compounds possess an integer magnetic moment (1.000{mu}{sub B}) per formula unit, which is one of the important characteristics of half-metallic ferromagnets (HMFs). The ferromagnetic (FM) state is found to be stable for ZB TcC, TcSi and TcGe against the nonmagnetic (NM) and antiferromagnetic (AFM) states. Calculations show that half-metallicity can be maintained for a wide range of lattice constants in these binary compounds. Density functional calculations of exchange interactions and the Curie temperatures reveal similar trends for the three compounds with respect to the lattice parameter. These compounds are compatible with the traditional semiconductors, and could be useful in spin-electronics and other applications. The most important aspect of this work is to explore the possibility of not only magnetism, but HM ferromagnetism in compounds involving NM elements and 4d transition element Tc. - Highlights: Black-Right-Pointing-Pointer We study magnetism of the compounds TcSi, TcC, and TcGe. Black-Right-Pointing-Pointer These compounds, with nonmagnetic constituents, are found to be ferromagnetic. Black-Right-Pointing-Pointer They show robust half-metallicity in zinc blende structure. Black-Right-Pointing-Pointer Estimated Curie temperatures suggest that synthesis of these compounds is worth pursuing.

  19. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  20. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  1. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  2. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  3. Spectroscopic Imaging Scanning Tunneling Microscopy Studies of Electronic Structure in the Superconducting and Pseudogap Phases of Cuprate High-Tc Superconductors

    Science.gov (United States)

    Fujita, Kazuhiro; Schmidt, Andrew R.; Kim, Eun-Ah; Lawler, Michael J.; Lee, Dung Hai; Davis, J. C.; Eisaki, Hiroshi; Uchida, Shin-ichi

    2012-01-01

    phase diagram and the mechanism of high-Tc superconductivity, represents one of a key challenges for cuprate studies.

  4. An electromagnetically actuated fiber optic switch using magnetized ferromagnetic materials

    Science.gov (United States)

    Pandojirao-S, Praveen; Dhaubanjar, Naresh; Phuyal, Pratibha C.; Chiao, Mu; Chiao, J.-C.

    2008-03-01

    This paper presents the design, fabrication and testing of a fiber optic switch actuated electromagnetically. The ferromagnetic gel coated optical fiber is actuated using external electromagnetic fields. The ferromagnetic gel consists of ferromagnetic powders dispersed in epoxy. The fabrication utilizes a simple cost-effective coating setup. A direct fiberto-fiber alignment eliminates the need for complementary optical parts and the displacement of fiber switches the laser coupling. The magnetic characteristics of magnetized ferromagnetic materials are performed using alternating gradient magnetometer and the magnetic hysteresis curves are measured for different ferromagnetic materials including iron, cobalt, and nickel. Optical fiber switches with various fiber lengths are actuated and their static and dynamic responses for the same volume of ferromagnetic gel are summarized. The highest displacement is 1.345 mm with an input current of 260mA. In this paper, the performance of fiber switches with various coating materials is presented.

  5. Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Remes, Zdenek [Institute of Physics ASCR v.v.i., Cukrovarnicka 10, 162 00 Prague 6 (Czech Republic); Sun, Shih-Jye, E-mail: sjs@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Varga, Marian [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Chou, Hsiung [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsu, Hua-Shu [Department of Applied Physics, National Pingtung University of Education, Pingtung 900, Taiwan (China); Kromka, Alexander [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Horak, Pavel [Nuclear Physics Institute, 250 68 Rez (Czech Republic)

    2015-11-15

    The nanocrystalline diamond films turn to be ferromagnetic after implanting various nitrogen doses on them. Through this research, we confirm that the room-temperature ferromagnetism of the implanted samples is derived from the measurements of magnetic circular dichroism (MCD) and superconducting quantum interference device (SQUID). Samples with larger crystalline grains as well as higher implanted doses present more robust ferromagnetic signals at room temperature. Raman spectra indicate that the small grain-sized samples are much more disordered than the large grain-sized ones. We propose that a slightly large saturated ferromagnetism could be observed at low temperature, because the increased localization effects have a significant impact on more disordered structure. - Highlights: • Nitrogen implanted nanocrystalline diamond films exhibit ferromagnetism at room temperature. • Nitrogen implants made a Raman deviation from the typical nanocrystalline diamond films. • The ferromagnetism induced from the structure distortion is dominant at low temperature.

  6. Modelling characteristics of ferromagnetic cores with the influence of temperature

    International Nuclear Information System (INIS)

    Górecki, K; Rogalska, M; Zarȩbski, J; Detka, K

    2014-01-01

    The paper is devoted to modelling characteristics of ferromagnetic cores with the use of SPICE software. Some disadvantages of the selected literature models of such cores are discussed. A modified model of ferromagnetic cores taking into account the influence of temperature on the magnetizing characteristics and the core losses is proposed. The form of the elaborated model is presented and discussed. The correctness of this model is verified by comparing the calculated and the measured characteristics of the selected ferromagnetic cores.

  7. A method for measuring exchange stiffness in ferromagnetic films

    International Nuclear Information System (INIS)

    Girt, Erol; Huttema, W.; Montoya, E.; Kardasz, B.; Eyrich, C.; Heinrich, B.; Mryasov, O. N.; Dobin, A. Yu.; Karis, O.

    2011-01-01

    An exchange stiffness, A ex , in ferromagnetic films is obtained by fitting the M(H) dependence of two ferromagnetic layers antiferromagnetically coupled across a nonmagnetic spacer layer with a simple micromagnetic model. In epitaxial and textured structures this method allows measuring A ex between the crystallographic planes perpendicular to the growth direction of ferromagnetic films. Our results show that A ex between [0001] planes in textured Co grains is 1.54 ± 0.12 x 10 -11 J/m.

  8. Room temperature ferromagnetism in ZnO prepared by microemulsion

    Directory of Open Access Journals (Sweden)

    Qingyu Xu

    2011-09-01

    Full Text Available Clear room temperature ferromagnetism has been observed in ZnO powders prepared by microemulsion. The O vacancy (VO clusters mediated by the VO with one electron (F center contributed to the ferromagnetism, while the isolated F centers contributed to the low temperature paramagnetism. Annealing in H2 incorporated interstitial H (Hi in ZnO, and removed the isolated F centers, leading to the suppression of the paramagnetism. The ferromagnetism has been considered to originate from the VO clusters mediated by the Hi, leading to the enhancement of the coercivity. The ferromagnetism disappeared after annealing in air due to the reduction of Hi.

  9. Ferromagnetic pairing states on two-coupled chains

    International Nuclear Information System (INIS)

    Tanaka, Akinori

    2008-01-01

    We propose a concrete model which exhibits ferromagnetism and electron-pair condensation simultaneously. The model is defined on two chains and consists of the electron hopping term, the on-site Coulomb repulsion and a ferromagnetic interaction which describes ferromagnetic coupling between two electrons, one on a bond in a chain and the other on a site in the other chain. It is rigorously shown that the model has fully-polarized ferromagnetic pairing ground states. The higher dimensional version of the model is also presented

  10. Transition-metal-doped group-IV monochalcogenides: a combination of two-dimensional triferroics and diluted magnetic semiconductors

    Science.gov (United States)

    Yang, Liu; Wu, Menghao; Yao, Kailun

    2018-05-01

    We report the first-principles evidence of a series of two-dimensional triferroics (ferromagnetic + ferroelectric + ferroelastic), which can be obtained by doping transition-metal ions in group-IV monochalcogenide (SnS, SnSe, GeS, GeSe) monolayers, noting that a ferromagnetic Fe-doped SnS2 monolayer has recently been realized (Li B et al 2017 Nat. Commun. 8 1958). The ferroelectricity, ferroelasticity and ferromagnetism can be coupled and the magnetization direction may be switched upon ferroelectric/ferroelastic switching, rendering electrical writing + magnetic reading possible. They can be also two-dimensional half-metals or diluted magnetic semiconductors, where p/n channels or even multiferroic tunneling junctions can be designed by variation in doping and incorporated into a monolayer wafer.

  11. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

    International Nuclear Information System (INIS)

    Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

    2014-01-01

    One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis

  12. Strong correlation and ferromagnetism in (Ga,Mn)As and (Ga,Mn)N

    International Nuclear Information System (INIS)

    Filippetti, A.; Spaldin, N.A.; Sanvito, S.

    2005-01-01

    The band energies of the ferromagnetic diluted magnetic semiconductors (Ga,Mn)As and (Ga,Mn)N are calculated using a self-interaction-free approach which describes covalent and strongly correlated electrons without adjustable parameters. Both materials are half-metallic, although the contribution of Mn-derived d states to the bands around the Fermi energy is very different in the two cases. In (Ga,Mn)As the bands are strongly p-d hybridized, with a dominance of As p states. In contrast in (Ga,Mn)N the Fermi energy lies within three flat bands of mainly d character that are occupied by two electrons. Thus the Mn ion in (Ga,Mn)N behaves as a deep trap acceptor, with the hole at 1.39 eV above the GaN valence band top, and is in excellent agreement with the experimental data

  13. Evidence of dilute ferromagnetism in rare-earth doped yttrium aluminium garnet

    Energy Technology Data Exchange (ETDEWEB)

    Farr, Warrick G.; Goryachev, Maxim; Le Floch, Jean-Michel; Tobar, Michael E. [ARC Centre of Excellence for Engineered Quantum Systems, University of Western Australia, 35 Stirling Highway, Crawley, Western Australia 6009 (Australia); Bushev, Pavel [Experimentalphysik, Universität des Saarlandes, D-66123 Saarbrücken (Germany)

    2015-09-21

    This work demonstrates strong coupling regime between an erbium ion spin ensemble and microwave hybrid cavity-whispering gallery modes in a yttrium aluminium garnet dielectric crystal. Coupling strengths of 220 MHz and mode quality factors in excess of 10{sup 6} are demonstrated. Moreover, the magnetic response of high-Q modes demonstrates behaviour which is unusual for paramagnetic systems. This behaviour includes hysteresis and memory effects. Such qualitative change of the system's magnetic field response is interpreted as a phase transition of rare earth ion impurities. This phenomenon is similar to the phenomenon of dilute ferromagnetism in semiconductors. The clear temperature dependence of the phenomenon is demonstrated.

  14. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit.

    Science.gov (United States)

    Huang, Bevin; Clark, Genevieve; Navarro-Moratalla, Efrén; Klein, Dahlia R; Cheng, Ran; Seyler, Kyle L; Zhong, Ding; Schmidgall, Emma; McGuire, Michael A; Cobden, David H; Yao, Wang; Xiao, Di; Jarillo-Herrero, Pablo; Xu, Xiaodong

    2017-06-07

    Since the discovery of graphene, the family of two-dimensional materials has grown, displaying a broad range of electronic properties. Recent additions include semiconductors with spin-valley coupling, Ising superconductors that can be tuned into a quantum metal, possible Mott insulators with tunable charge-density waves, and topological semimetals with edge transport. However, no two-dimensional crystal with intrinsic magnetism has yet been discovered; such a crystal would be useful in many technologies from sensing to data storage. Theoretically, magnetic order is prohibited in the two-dimensional isotropic Heisenberg model at finite temperatures by the Mermin-Wagner theorem. Magnetic anisotropy removes this restriction, however, and enables, for instance, the occurrence of two-dimensional Ising ferromagnetism. Here we use magneto-optical Kerr effect microscopy to demonstrate that monolayer chromium triiodide (CrI 3 ) is an Ising ferromagnet with out-of-plane spin orientation. Its Curie temperature of 45 kelvin is only slightly lower than that of the bulk crystal, 61 kelvin, which is consistent with a weak interlayer coupling. Moreover, our studies suggest a layer-dependent magnetic phase, highlighting thickness-dependent physical properties typical of van der Waals crystals. Remarkably, bilayer CrI 3 displays suppressed magnetization with a metamagnetic effect, whereas in trilayer CrI 3 the interlayer ferromagnetism observed in the bulk crystal is restored. This work creates opportunities for studying magnetism by harnessing the unusual features of atomically thin materials, such as electrical control for realizing magnetoelectronics, and van der Waals engineering to produce interface phenomena.

  15. Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications

    Science.gov (United States)

    Nie, Tianxiao; Tang, Jianshi; Wang, Kang L.

    2015-09-01

    In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

  16. Magnetic microstructure of nanocrystalline ferromagnets and nanocrystalline systems combining ferromagnetic and antiferromagnetic phases

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, J.; Wagner, W. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Kostorz, G. [Eidgenoessische Technische Hochschule, Zurich (Switzerland); Wiedenmann, A. [HMI Berlin (Germany)

    1997-09-01

    Magnetic small-angle neutron scattering measurements were performed on nanostructured ferromagnetic materials on the basis of Fe, Ni and Co, produced preferentially by the inert-gas condensation technique, with the aim to determine the magnetic microstructure of mesoscopic small-particle systems. (author) 1 fig., 3 refs.

  17. Competing ferromagnetic and anti-ferromagnetic interactions in iron nitride ζ-Fe2N

    Science.gov (United States)

    Rao, K. Sandeep; Salunke, H. G.

    2018-03-01

    The paper discusses the magnetic state of zeta phase of iron nitride viz. ζ-Fe2N on the basis of spin polarized first principles electronic structure calculations together with a review of already published data. Results of our first principles study suggest that the ground state of ζ-Fe2N is ferromagnetic (FM) with a magnetic moment of 1.528μB on the Fe site. The FM ground state is lower than the anti-ferromagnetic (AFM) state by 8.44 meV and non-magnetic (NM) state by 191 meV per formula unit. These results are important in view of reports which claim that ζ-Fe2N undergoes an AFM transition below 10 K and others which do not observe any magnetic transition up to 4.2 K. We argue that the experimental results of AFM transition below 10 K are inconclusive and we propose the presence of competing FM and AFM superexchange interactions between Fe sites mediated by nitrogen atoms, which are consistent with Goodenough-Kanamori-Anderson rules. We find that the anti-ferromagnetically coupled Fe sites are outnumbered by ferromagnetically coupled Fe sites leading to a stable FM ground state. A Stoner analysis of the results also supports our claim of a FM ground state.

  18. Defect induced d{sup 0} ferromagnetism in a ZnO grain boundary

    Energy Technology Data Exchange (ETDEWEB)

    Assa Aravindh, Sasikala Devi; Schwingenschloegl, Udo; Roqan, Iman S, E-mail: iman.roqan@kaust.edu.sa [Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 2955-6900 (Saudi Arabia)

    2015-12-14

    Several experimental studies have referred to the grain boundary (GB) defect as the origin of ferromagnetism in zinc oxide (ZnO). However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnO GB using the generalized gradient approximation+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. The Zn vacancy (V{sub Zn}) shows a tendency to be attracted to the GB, relative to the bulk-like region. Although no magnetization is obtained from point defect-free GB, V{sub Zn} induces spin polarization as large as 0.68 μ{sub B}/atom to the O sites at the GB. Ferromagnetic exchange energy >150 eV is obtained by increasing the concentration of V{sub Zn} and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d{sup 0} semiconductors.

  19. Defect induced d0 ferromagnetism in a ZnO grain boundary

    KAUST Repository

    Devi, Assa Aravindh Sasikala

    2015-12-08

    Several experimental studies have referred to the grain boundary(GB) defect as the origin of ferromagnetism in zinc oxide (ZnO). However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnOGB using the generalized gradient approximation+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. The Znvacancy (VZn) shows a tendency to be attracted to the GB, relative to the bulk-like region. Although no magnetization is obtained from point defect-free GB, VZn induces spin polarization as large as 0.68 μB/atom to the O sites at the GB.Ferromagnetic exchange energy >150 eV is obtained by increasing the concentration of VZn and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d0semiconductors.

  20. Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

    Science.gov (United States)

    Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

    2018-06-01

    The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.