Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices

Science.gov (United States)

Wasisto, Hutomo Suryo; Yu, Feng; Doering, Lutz; Völlmeke, Stefan; Brand, Uwe; Bakin, Andrey; Waag, Andreas; Peiner, Erwin

2015-05-01

Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al2O3) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al2O3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al2O3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al2O3 wet etching and in ICP cryogenic dry etching. By using SF6/O2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60-100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

Magnetic characterization of the stator core of a high-speed motor made of an ultrathin electrical steel sheet using the magnetic property evaluation system

Directory of Open Access Journals (Sweden)

Mohachiro Oka

2018-04-01

Full Text Available Recently, the application areas for electric motors have been expanding. For instance, electric motors are used in new technologies such as rovers, drones, cars, and robots. The motor used in such machinery should be small, high-powered, highly-efficient, and high-speed. In such motors, loss at high-speed rotation must be especially minimal. Eddy-current loss in the stator core is known to increase greatly during loss at high-speed rotation of the motor. To produce an efficient high-speed motor, we are developing a stator core for a motor using an ultrathin electrical steel sheet with only a small amount of eddy-current loss. Furthermore, the magnetic property evaluation for efficient, high-speed motor stator cores that use conventional commercial frequency is insufficient. Thus, we made a new high-speed magnetic property evaluation system to evaluate the magnetic properties of the efficient high-speed motor stator core. This system was composed of high-speed A/D converters, D/A converters, and a high-speed power amplifier. In experiments, the ultrathin electrical steel sheet dramatically suppressed iron loss and, in particular, eddy-current loss. In addition, a new high-speed magnetic property evaluation system accurately evaluated the magnetic properties of the efficient high-speed motor stator core.

Magnetic characterization of the stator core of a high-speed motor made of an ultrathin electrical steel sheet using the magnetic property evaluation system

Science.gov (United States)

Oka, Mohachiro; Enokizono, Masato; Mori, Yuji; Yamazaki, Kazumasa

2018-04-01

Recently, the application areas for electric motors have been expanding. For instance, electric motors are used in new technologies such as rovers, drones, cars, and robots. The motor used in such machinery should be small, high-powered, highly-efficient, and high-speed. In such motors, loss at high-speed rotation must be especially minimal. Eddy-current loss in the stator core is known to increase greatly during loss at high-speed rotation of the motor. To produce an efficient high-speed motor, we are developing a stator core for a motor using an ultrathin electrical steel sheet with only a small amount of eddy-current loss. Furthermore, the magnetic property evaluation for efficient, high-speed motor stator cores that use conventional commercial frequency is insufficient. Thus, we made a new high-speed magnetic property evaluation system to evaluate the magnetic properties of the efficient high-speed motor stator core. This system was composed of high-speed A/D converters, D/A converters, and a high-speed power amplifier. In experiments, the ultrathin electrical steel sheet dramatically suppressed iron loss and, in particular, eddy-current loss. In addition, a new high-speed magnetic property evaluation system accurately evaluated the magnetic properties of the efficient high-speed motor stator core.

Aligned carbon nanotube-silicon sheets: a novel nano-architecture for flexible lithium ion battery electrodes.

Science.gov (United States)

Fu, Kun; Yildiz, Ozkan; Bhanushali, Hardik; Wang, Yongxin; Stano, Kelly; Xue, Leigang; Zhang, Xiangwu; Bradford, Philip D

2013-09-25

Aligned carbon nanotube sheets provide an engineered scaffold for the deposition of a silicon active material for lithium ion battery anodes. The sheets are low-density, allowing uniform deposition of silicon thin films while the alignment allows unconstrained volumetric expansion of the silicon, facilitating stable cycling performance. The flat sheet morphology is desirable for battery construction. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subsurface damage mechanism of high speed grinding process in single crystal silicon revealed by atomistic simulations

International Nuclear Information System (INIS)

Li, Jia; Fang, Qihong; Zhang, Liangchi; Liu, Youwen

2015-01-01

Highlights: • Molecular dynamic model of nanoscale high speed grinding of silicon workpiece has been established. • The effect of grinding speed on subsurface damage and grinding surface integrity by analyzing the chip, dislocation movement, and phase transformation during high speed grinding process are thoroughly investigated. • Subsurface damage is studied by the evolution of surface area at first time for more obvious observation on transition from ductile to brittle. • The hydrostatic stress and von Mises stress by the established analytical model are studied subsurface damage mechanism during nanoscale grinding. - Abstract: Three-dimensional molecular dynamics (MD) simulations are performed to investigate the nanoscale grinding process of single crystal silicon using diamond tool. The effect of grinding speed on subsurface damage and grinding surface integrity by analyzing the chip, dislocation movement, and phase transformation are studied. We also establish an analytical model to calculate several important stress fields including hydrostatic stress and von Mises stress for studying subsurface damage mechanism, and obtain the dislocation density on the grinding subsurface. The results show that a higher grinding velocity in machining brittle material silicon causes a larger chip and a higher temperature, and reduces subsurface damage. However, when grinding velocity is above 180 m s −1 , subsurface damage thickness slightly increases because a higher grinding speed leads to the increase in grinding force and temperature, which accelerate dislocation nucleation and motion. Subsurface damage is studied by the evolution of surface area at first time for more obvious observation on transition from ductile to brittle, that provides valuable reference for machining nanometer devices. The von Mises stress and the hydrostatic stress play an important role in the grinding process, and explain the subsurface damage though dislocation mechanism under high

LSA Large Area Silicon Sheet Task Continuous Czochralski Process Development

Science.gov (United States)

Rea, S. N.

1979-01-01

A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.

The most intense current sheets in the high-speed solar wind near 1 AU

Science.gov (United States)

Podesta, John J.

2017-03-01

Electric currents in the solar wind plasma are investigated using 92 ms fluxgate magnetometer data acquired in a high-speed stream near 1 AU. The minimum resolvable scale is roughly 0.18 s in the spacecraft frame or, using Taylor's "frozen turbulence" approximation, one proton inertial length di in the plasma frame. A new way of identifying current sheets is developed that utilizes a proxy for the current density J obtained from the derivatives of the three orthogonal components of the observed magnetic field B. The most intense currents are identified as 5σ events, where σ is the standard deviation of the current density. The observed 5σ events are characterized by an average scale size of approximately 3di along the flow direction of the solar wind, a median separation of around 50di or 100di along the flow direction of the solar wind, and a peak current density on the order of 0.5 pA/cm2. The associated current-carrying structures are consistent with current sheets; however, the planar geometry of these structures cannot be confirmed using single-point, single-spacecraft measurements. If Taylor's hypothesis continues to hold for the energetically dominant fluctuations at kinetic scales 1high-speed wind occur at electron scales, although the peak current densities at kinetic and electron scales are predicted to be nearly the same as those found in this study.

Effect of wheel speed on magnetic and mechanical properties of melt spun Fe-6.5 wt.% Si high silicon steel

Science.gov (United States)

Ouyang, Gaoyuan; Jensen, Brandt; Tang, Wei; Dennis, Kevin; Macziewski, Chad; Thimmaiah, Srinivasa; Liang, Yongfeng; Cui, Jun

2018-05-01

Fe-Si electric steel is the most widely used soft magnetic material in electric machines and transformers. Increasing the silicon content from 3.2 wt.% to 6.5 wt.% brings about large improvement in the magnetic and electrical properties. However, 6.5 wt.% silicon steel is inherited with brittleness owing to the formation of B2 and D03 ordered phase. To obtain ductility in Fe-6.5wt.% silicon steel, the ordered phase has to be bypassed with methods like rapid cooling. In present paper, the effect of cooling rate on magnetic and mechanical properties of Fe-6.5wt.% silicon steel is studied by tuning the wheel speed during melt spinning process. The cooling rate significantly alters the ordering and microstructure, and thus the mechanical and magnetic properties. X-ray diffraction data shows that D03 ordering was fully suppressed at high wheel speeds but starts to nucleate at 10m/s and below, which correlates with the increase of Young's modulus towards low wheel speeds as tested by nanoindentation. The grain sizes of the ribbons on the wheel side decrease with increasing wheel speeds, ranging from ˜100 μm at 1m/s to ˜8 μm at 30m/s, which lead to changes in coercivity.

MICROSTRUCTURING OF SILICON SINGLE CRYSTALS BY FIBER LASER IN HIGH-SPEED SCANNING MODE

Directory of Open Access Journals (Sweden)

T. A. Trifonova

2015-11-01

Full Text Available Subject of Study. The surface structure of the silicon wafers (substrate with a thermally grown silicon dioxide on the surface (of SiO2/Si is studied after irradiation by pulse fiber laser of ILI-1-20 type. The main requirements for exposure modes of the system are: the preservation of the integrity of the film of silicon dioxide in the process of microstructuring and the absence of interference of surrounding irradiated areas of the substrate. Method. Studies were carried out on silicon wafers KEF-4,5 oriented in the crystallographic plane (111 with the source (natural silicon dioxide (SiO2 with thickness of about 4 nm, and SiO2 with 40 nm and 150 nm thickness, grown by thermal oxidation in moist oxygen. Also, wafers KHB-10 oriented in the plane (100 with 500 nm thickness of thermal oxide were investigated. Irradiation of SiO2/Si system was produced by laser complex based on ytterbium fiber pulse laser ILI-1-20. Nominal output power of the laser was 20 W, and the laser wavelength was λ = 1062 nm. Irradiation was carried out by a focused beam spot with a diameter of 25 microns and a pulse repetition rate of 99 kHz. The samples with 150 nm and 40 nm thickness of SiO2 were irradiated at a power density equal to 1,2·102 W/cm2, and the samples of SiO2 with 500 nm thickness were irradiated at a power density equal to 2,0·102 W/cm2. Scanning was performed using a two-axis Coordinate Scanning Device based on VM2500+ drives with control via a PC with the software package "SinMarkTM." Only one scan line was used at the maximum speed of the beam equal to 8750 mm/s. Morphology control of the irradiated samples was conducted by an optical microscope ZeissA1M with high-resolution CCD array. A scanning probe microscope Nanoedicator of the NT-MDT company was used for structural measurements. Main Results. It has been shown that at a single exposure of high-frequency pulsed laser radiation on SiO2/Si system, with maintaining the integrity of the SiO2 film

Experimental investigation into the coupling effects of magnetic field, temperature and pressure on electrical resistivity of non-oriented silicon steel sheet

Science.gov (United States)

Xiao, Lijun; Yu, Guodong; Zou, Jibin; Xu, Yongxiang

2018-05-01

In order to analyze the performance of magnetic device which operate at high temperature and high pressure, such as submersible motor, oil well transformer, the electrical resistivity of non-oriented silicon steel sheets is necessary for precise analysis. But the reports of the examination of the measuring method suitable for high temperature up to 180 °C and high pressure up to 140 MPa are few. In this paper, a measurement system based on four-probe method and Archimedes spiral shape measurement specimens is proposed. The measurement system is suitable for measuring the electrical resistivity of unconventional specimens under high temperature and high pressure and can simultaneously consider the influence of the magnetic field on the electrical resistivity. It can be seen that the electrical resistivity of the non-oriented silicon steel sheets will fluctuate instantaneously when the magnetic field perpendicular to the conductive path of the specimens is loaded or removed. The amplitude and direction of the fluctuation are not constant. Without considering the effects of fluctuations, the electrical resistivity of the non-oriented silicon steel sheets is the same when the magnetic field is loaded or removed. And the influence of temperature on the electrical resistivity of the non-oriented silicon steel sheet is still the greatest even though the temperature and the pressure are coupled together. The measurement results also show that the electrical resistivity varies linearly with temperature, so the temperature coefficient of resistivity is given in the paper.

Efficient 3D conducting networks built by graphene sheets and carbon nanoparticles for high-performance silicon anode.

Science.gov (United States)

Zhou, Xiaosi; Yin, Ya-Xia; Cao, An-Min; Wan, Li-Jun; Guo, Yu-Guo

2012-05-01

The utilization of silicon particles as anode materials for lithium-ion batteries is hindered by their low intrinsic electric conductivity and large volume changes during cycling. Here we report a novel Si nanoparticle-carbon nanoparticle/graphene composite, in which the addition of carbon nanoparticles can effectively alleviate the aggregation of Si nanoparticles by separating them from each other, and help graphene sheets build efficient 3D conducting networks for Si nanoparticles. Such Si-C/G composite shows much improved electrochemical properties in terms of specific capacity and cycling performance (ca. 1521 mA h g(-1) at 0.2 C after 200 cycles), as well as a favorable high-rate capability.

Analysis of Welding Zinc Coated Steel Sheets in Zero Gap Configuration by 3D Simulations and High Speed Imaging

Science.gov (United States)

Koch, Holger; Kägeler, Christian; Otto, Andreas; Schmidt, Michael

Welding of zinc coated sheets in zero gap configuration is of eminent interest for the automotive industry. This Laser welding process would enable the automotive industry to build auto bodies with a high durability in a plain manufacturing process. Today good welding results can only be achieved by expensive constructive procedures such as clamping devices to ensure a defined gad. The welding in zero gap configuration is a big challenge because of the vaporised zinc expelled from the interface between the two sheets. To find appropriate welding parameters for influencing the keyhole and melt pool dynamics, a three dimensional simulation and a high speed imaging system for laser keyhole welding have been developed. The obtained results help to understand the process of the melt pool perturbation caused by vaporised zinc.

High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

Directory of Open Access Journals (Sweden)

Graham Trevor Reed

2014-12-01

Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

Visualization of Projectile Flying at High Speed in Dusty Atmosphere

Science.gov (United States)

Masaki, Chihiro; Watanabe, Yasumasa; Suzuki, Kojiro

2017-10-01

Considering a spacecraft that encounters particle-laden environment, such as dust particles flying up over the regolith by the jet of the landing thruster, high-speed flight of a projectile in such environment was experimentally simulated by using the ballistic range. At high-speed collision of particles on the projectile surface, they may be reflected with cracking into smaller pieces. On the other hand, the projectile surface will be damaged by the collision. To obtain the fundamental characteristics of such complicated phenomena, a projectile was launched at the velocity up to 400 m/s and the collective behaviour of particles around projectile was observed by the high-speed camera. To eliminate the effect of the gas-particle interaction and to focus on only the effect of the interaction between the particles and the projectile's surface, the test chamber pressure was evacuated down to 30 Pa. The particles about 400μm diameter were scattered and formed a sheet of particles in the test chamber by using two-dimensional funnel with a narrow slit. The projectile was launched into the particle sheet in the tangential direction, and the high-speed camera captured both projectile and particle motions. From the movie, the interaction between the projectile and particle sheet was clarified.

Heat transfer modeling in asymmetrical sheet rolling of aluminium alloys with ultra high shear strain

Directory of Open Access Journals (Sweden)

Pesin Alexander

2016-01-01

Full Text Available Asymmetrical sheet rolling is a method of severe plastic deformation (SPD for production of aluminium alloys with UFG structure. Prediction of sheet temperature during SPD is important. The temperature of sheet is changed due to the conversion of mechanical work into heat through sliding on contact surfaces and high shear strain. Paper presents the results of FEM simulation of the effect of contact friction, rolling speed and rolls speed ratio on the heating of aluminium sheets during asymmetrical rolling.

Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

Science.gov (United States)

Schmid, F.; Khattak, C. P.

1978-01-01

Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

Temperature effects on the magnetic properties of silicon-steel sheets using standardized toroidal frame.

Science.gov (United States)

Wu, Cheng-Ju; Lin, Shih-Yu; Chou, Shang-Chin; Tsai, Chia-Yun; Yen, Jia-Yush

2014-01-01

This study designed a detachable and standardized toroidal test frame to measure the electromagnetic characteristic of toroidal laminated silicon steel specimens. The purpose of the design was to provide the measurements with standardized and controlled environment. The device also can withstand high temperatures (25-300°C) for short time period to allow high temperature tests. The accompanying driving circuit facilitates testing for high frequency (50-5,000 Hz) and high magnetic flux (0.2-1.8 T) conditions and produces both sinusoidal and nonsinusoidal test waveforms. The thickness of the stacked laminated silicon-steel sheets must be 30~31 mm, with an internal diameter of 72 mm and an outer diameter of 90 mm. With the standardized setup, it is possible to carry out tests for toroidal specimen in high temperature and high flux operation. The test results show that there is a tendency of increased iron loss under high temperature operation. The test results with various driving waveforms also provide references to the required consideration in engineering designs.

High speed laser tomography system

Science.gov (United States)

Samsonov, D.; Elsaesser, A.; Edwards, A.; Thomas, H. M.; Morfill, G. E.

2008-03-01

A high speed laser tomography system was developed capable of acquiring three-dimensional (3D) images of optically thin clouds of moving micron-sized particles. It operates by parallel-shifting an illuminating laser sheet with a pair of galvanometer-driven mirrors and synchronously recording two-dimensional (2D) images of thin slices of the imaged volume. The maximum scanning speed achieved was 120000slices/s, sequences of 24 volume scans (up to 256 slices each) have been obtained. The 2D slices were stacked to form 3D images of the volume, then the positions of the particles were identified and followed in the consecutive scans. The system was used to image a complex plasma with particles moving at speeds up to cm/s.

High speed laser cutting machine. Kosoku reza kakoki

Energy Technology Data Exchange (ETDEWEB)

Shinno, N. (Matsushita Electric Industrial Co. Ltd., Kadoma, Osaka (Japan))

1993-11-01

The carbon dioxide gas laser cutting machine is being used widely for from cutting soft steel and stainless steel, etc. to intermetallic welding and in the field of cutting in particular, concerning sheet cutting, it has been changing the existing monopoly of the turret punch press, and as for medium and thick plate cutting, that of the gas plasma fusing device. This article is the general description of high speed laser cutting machine. Concerning the laser cutting (sheet cutting in particular), as the essential items for securing severe cutting accuracy and, at the same time, improving the cutting speed, the following matters are picked up for respective explanation; improvement of stationary machine accuracy, improvement of dynamic machine accuracy, improvement of quality of laser beam as well as optimization of cutting conditions, and shortening of piercing time. Also explanation is given to the respective items, namely speeding-up of medium and thick plate cutting, and reduction of load onto the operator by improved operation. Finally, feeding and removing of a sheet only, and feeding and removing with a pallet are mentioned as the efforts for automation and energy saving. 3 figs., 1 tab.

Large area sheet task. Advanced dendritic web growth development. [silicon films

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Meier, D.; Frantti, E.; Schruben, J.

1981-01-01

The development of a silicon dendritic web growth machine is discussed. Several refinements to the sensing and control equipment for melt replenishment during web growth are described and several areas for cost reduction in the components of the prototype automated web growth furnace are identified. A circuit designed to eliminate the sensitivity of the detector signal to the intensity of the reflected laser beam used to measure melt level is also described. A variable speed motor for the silicon feeder is discussed which allows pellet feeding to be accomplished at a rate programmed to match exactly the silicon removed by web growth.

Tooling device design for vibration-assisted high speed shaping of PMMA

International Nuclear Information System (INIS)

Mostofa, Md. Golam; Noh, J. H.; Kim, H. Y.; Ahn, J. H.; Kang, D. B.

2010-01-01

PMMA optical components that are used as one of the most important parts of high precision equipment and machines are increasingly replacing the glass due to the various advantages of PMMA. Especially in Light Guide Panels, the PMMA sheet that is used in Liquid Crystal Displays plays an important role in scattering the incident light and requires very fine machining as the sheet is directly related to the optical characteristics of the panels. The High Speed End milling and High Speed Shaping processes that are widely adopted and applied to the precise machining of Light Incident Plane still have quality problems, such as cracks, breakages, poor waviness, and straightness. This paper presents the tooling device design for machining a Light Incident Plane through vibration-assisted High Speed Shaping for increasing the optical quality by minimizing the above-mentioned problems. The cutting tool and the tool post presented in this paper are designed by the authors to increase the magnitude of the cutting stroke by adopting the resonant frequency without weakening the stiffness and to reduce vibrations during even high speed feeding. The dynamic characteristics of the cutting tool and the tool post are evaluated through simulation and experiment as well. The results reveal very appropriate dynamic characteristics for vibration-assisted High Speed Shaping

Brain inspired high performance electronics on flexible silicon

KAUST Repository

Sevilla, Galo T.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

Brain's stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components

High-speed nonvolatile CMOS/MNOS RAM

International Nuclear Information System (INIS)

Derbenwick, G.F.; Dodson, W.D.; Sokel, R.J.

1979-01-01

A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si 3 N 4 insulator deposited at 750 0 C. Read cycle times less than 350 ns and write cycle times of 1 μs are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected

Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty.

Science.gov (United States)

Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

2013-01-01

Primary cheek teratomas are rare with joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence.

Thermomechanical simulations and experimental validation for high speed incremental forming

Science.gov (United States)

Ambrogio, Giuseppina; Gagliardi, Francesco; Filice, Luigino; Romero, Natalia

2016-10-01

Incremental sheet forming (ISF) consists in deforming only a small region of the workspace through a punch driven by a NC machine. The drawback of this process is its slowness. In this study, a high speed variant has been investigated from both numerical and experimental points of view. The aim has been the design of a FEM model able to perform the material behavior during the high speed process by defining a thermomechanical model. An experimental campaign has been performed by a CNC lathe with high speed to test process feasibility. The first results have shown how the material presents the same performance than in conventional speed ISF and, in some cases, better material behavior due to the temperature increment. An accurate numerical simulation has been performed to investigate the material behavior during the high speed process confirming substantially experimental evidence.

Electrothermal Behavior of High-Frequency Silicon-On-Glass Transistors

NARCIS (Netherlands)

Nenadovic, N.

2004-01-01

In this thesis, research is focused on the investigation of electrothermal effects in high-speed silicon transistors. At high current levels the power dissipation in these devices can lead to heating of both the device itself and the adjacent devices. In advanced transistors these effects are

Design and applications of a pneumatic accelerator for high speed punching

International Nuclear Information System (INIS)

Yaldiz, Sueleyman; Saglam, Haci; Unsacar, Faruk; Isik, Hakan

2007-01-01

High speed forming is an important production method that requires specially designed HERF (high energy rate forming) machines. Most of the HERF machines are devices that consist of a system in which energy is stored and a differential piston mechanism is used to release the energy at high rate. In order to eliminate the usage of specially designed HERF machines and to obtain the high speed forming benefits, the accelerator which can be adapted easily onto conventional presses has been designed and manufactured in this study. The designed energy accelerator can be incorporated into mechanical press to convert the low speed operation into high-speed operation of a hammer. Expectations from this work are reduced distortion rates, increased surface quality and precise dimensions in metal forming operations. From the performance test, the accelerator is able to achieve high speed and energy which require for high speed blanking of thick sheet metals

Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

Science.gov (United States)

Yang, Lei; Hu, Gaijuan; Zhang, Dongqing; Diao, Dongfeng

2016-07-01

We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

High-speed detection at two micrometres with monolithic silicon photodiodes

Science.gov (United States)

Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

2015-06-01

With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Yang, Lei; Hu, Gaijuan; Zhang, Dongqing [Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing System, School of Mechanical Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Diao, Dongfeng, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

2016-07-18

We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

International Nuclear Information System (INIS)

Yang, Lei; Hu, Gaijuan; Zhang, Dongqing; Diao, Dongfeng

2016-01-01

We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

A bioactive metallurgical grade porous silicon-polytetrafluoroethylene sheet for guided bone regeneration applications.

Science.gov (United States)

Chadwick, E G; Clarkin, O M; Raghavendra, R; Tanner, D A

2014-01-01

The properties of porous silicon make it a promising material for a host of applications including drug delivery, molecular and cell-based biosensing, and tissue engineering. Porous silicon has previously shown its potential for the controlled release of pharmacological agents and in assisting bone healing. Hydroxyapatite, the principle constituent of bone, allows osteointegration in vivo, due to its chemical and physical similarities to bone. Synthetic hydroxyapatite is currently applied as a surface coating to medical devices and prosthetics, encouraging bone in-growth at their surface and improving osseointegration. This paper examines the potential for the use of an economically produced porous silicon particulate-polytetrafluoroethylene sheet for use as a guided bone regeneration device in periodontal and orthopaedic applications. The particulate sheet is comprised of a series of microparticles in a polytetrafluoroethylene matrix and is shown to produce a stable hydroxyapatite on its surface under simulated physiological conditions. The microstructure of the material is examined both before and after simulated body fluid experiments for a period of 1, 7, 14 and 30 days using Scanning Electron Microscopy. The composition is examined using a combination of Energy Dispersive X-ray Spectroscopy, Thin film X-ray diffraction, Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy and the uptake/release of constituents at the fluid-solid interface is explored using Inductively Coupled Plasma-Optical Emission Spectroscopy. Microstructural and compositional analysis reveals progressive growth of crystalline, 'bone-like' apatite on the surface of the material, indicating the likelihood of close bony apposition in vivo.

Application of oblique plane microscopy to high speed live cell imaging

Science.gov (United States)

Kumar, Sunil; Wilding, Dean; Sikkel, Markus B.; Lyon, Alexander R.; MacLeod, Ken T.; Dunsby, Chris

2011-07-01

Oblique Plane Microscopy (OPM) is a light sheet microscopy technique that combines oblique illumination with correction optics that tilt the focal plane of the collection system. OPM can be used to image conventionally mounted specimens on coverslips or tissue culture dishes and has low out-of-plane photobleaching and phototoxicity. No moving parts are required to achieve an optically sectioned image and so high speed optically sectioned imaging is possible. We present high speed 2D and 3D optically sectioned OPM imaging of live cells using a high NA water immersion lens.

Magnetic suspension and guidance of high speed vehicles. Final report

Energy Technology Data Exchange (ETDEWEB)

Alston, I A; Clark, J M; Hayden, J T

1972-12-01

Technical and economical assessments of magnetic suspensions for high speed vehicles and transport systems are reported. In these suspensions the suspending magnet takes the form of a powerful superconducting electromagnet that induces currents while it moves over conducting sheets or loops. A number of vehicle track designs are evaluated for operating cost effectiveness. It is shown that propulsion systems using power collected from the track are more expensive than those using power generated onboard the vehicle, and that the conducting sheet suspension is slightly more expensive than the null flux suspension.

Vertical unstable stability of electrodynamic suspension of high-speed ground transport

International Nuclear Information System (INIS)

Baiko, A.V.; Voevodskii, K.E.; Kochetkov, V.M.

1980-01-01

The problem considered is the vertical oscillation of a superconducting solenoid moving over a conducting sheet in connection with the electrodynamic suspension of high-speed ground transport. The oscillation is considered to be unstable at a sufficiently high speed. The current oscillation in the superconducting solenoid caused by its mechanical oscillation is also investigated. The superconducting properties of a solenoid are found to have a pronounced effect on stability. Both the theory and numerical results are presented. Methods of oscillation damping are also discussed. (author)

Record high efficiency of screen-printed silicon aluminum back surface field solar cell: 20.29%

Science.gov (United States)

Kim, Ki Hyung; Park, Chang Sub; Doo Lee, Jae; Youb Lim, Jong; Yeon, Je Min; Kim, Il Hwan; Lee, Eun Joo; Cho, Young Hyun

2017-08-01

We have achieved a record high cell efficiency of 20.29% for an industrial 6-in. p-type monocrystalline silicon solar cell with a full-area aluminum back surface field (Al-BSF) by simply modifying the cell structure and optimizing the process with the existing cell production line. The cell efficiency was independently confirmed by the Solar Energy Research Institute of Singapore (SERIS). To increase the cell efficiency, for example, in four busbars, double printing, a lightly doped emitter with a sheet resistance of 90 to 100 Ω/□, and front surface passivation by using silicon oxynitride (SiON) on top of a silicon nitride (SiN x ) antireflection layer were adopted. To optimize front side processing, PC1D simulation was carried out prior to cell fabrication. The resulting efficiency gain is 0.64% compared with that in the reference cells with three busbars, a single antireflection coating layer, and a low-sheet-resistance emitter.

Direct writing of sub-wavelength ripples on silicon using femtosecond laser at high repetition rate

International Nuclear Information System (INIS)

Xie, Changxin; Li, Xiaohong; Liu, Kaijun; Zhu, Min; Qiu, Rong; Zhou, Qiang

2016-01-01

Graphical abstract: - Highlights: • The NSRs and DSRs are obtained on silicon surface. • With increasing direct writing speed, the NSRs suddenly changes and becomes the DSRs. • We develop a Sipe–Drude interference theory by considering the thermal excitation. - Abstract: The near sub-wavelength and deep sub-wavelength ripples on monocrystalline silicon were formed in air by using linearly polarized and high repetition rate femtosecond laser pulses (f = 76 MHz, λ = 800 nm, τ = 50 fs). The effects of laser pulse energy, direct writing speed and laser polarization on silicon surface morphology are studied. When the laser pulse energy is 2 nJ/pulse and the direct writing speed varies from 10 to 25 mm/s, the near sub-wavelength ripples (NSRs) with orientation perpendicular to the laser polarization are generated. While the direct writing speed reaches 30 mm/s, the direction of the obtained deep sub-wavelength ripples (DSRs) suddenly changes and becomes parallel to the laser polarization, rarely reported so far for femtosecond laser irradiation of silicon. Meanwhile, we extend the Sipe–Drude interference theory by considering the thermal excitation, and numerically calculate the efficacy factor for silicon irradiated by femtosecond laser pulses. The revised Sipe–Drude interference theoretical results show good agreement with the periods and orientations of sub-wavelength ripples.

Vacuum die casting of silicon sheet for photovoltaic applications. First quarterly report, March 16-June 30, 1979

Energy Technology Data Exchange (ETDEWEB)

None

1979-01-01

The obtective of this program is to develop a vacuum die-casting process for producing silicon sheet suitable for photovoltaic cells and to develop production techniques for optimization of polycrystallie silicon solar cell output. Efforts will examine process methods which are directed toward minimum cost processing of silicon into a quality suitable for producing solar cells with a terrestrial efficiency greater than 12% and having the potential to be scaled for large quantity production. In the vacuum die casting technique, silicon is melted under vacuum, and an evacuated die with a thin rectangular cavity is inserted into the melt. Liquid silicon is then injected into the die using a positive pressure of an inert gas. The major portion of the die casting work will be performed at Stanford Research Institute International under subcontract. The initial approach will follow parallel tracks: (1) obtain mechanical design parameters by using boron nitride, which has been shown to be non-wetting to silicon; (2) optimize silicon nitride material composition and coatings by sessile drop experiments; (3) test effectiveness of fluoride salt interfacial media with a graphite mold; and (4) test effect of surface finish using both boron nitride and graphite. Having established the material and mechanical boundary conditions, a finalized version of the prototype assembly will be constructed and the casting varibles determined. Polycrystalline silicon solar cells, with and without impurities, will be fabricated, characterized, and optimized at ARCCO Solar. The major activities will focus on the use of Wacker SILCO, HEM and in-house materials until vacuum die cast wafers are available. A baseline process with vacuum metallized contacts will be established and a reference mass production process with screen-printed metallization and high-throughput diffusions will also be obtained.

High-Speed, Low-Power ADC for Digital Beam Forming (DBF) Systems, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Ridgetop Group will design a high-speed, low-power silicon germanium (SiGe)-based, analog-to-digital converter (ADC) to be a key element for digital beam forming...

High speed video recording system on a chip for detonation jet engine testing

Directory of Open Access Journals (Sweden)

Samsonov Alexander N.

2018-01-01

Full Text Available This article describes system on a chip development for high speed video recording purposes. Current research was started due to difficulties in selection of FPGAs and CPUs which include wide bandwidth, high speed and high number of multipliers for real time signal analysis implementation. Current trend of high density silicon device integration will result soon in a hybrid sensor-controller-memory circuit packed in a single chip. This research was the first step in a series of experiments in manufacturing of hybrid devices. The current task is high level syntheses of high speed logic and CPU core in an FPGA. The work resulted in FPGA-based prototype implementation and examination.

Tactile shoe inlays for high speed pressure monitoring

DEFF Research Database (Denmark)

Drimus, Alin; Mátéfi-Tempfli, Stefan

2015-01-01

This work describes the development of flexible tactile sensor shoe inlays for humanoid robots. Their design is based on a sandwich structure of flexible layers with a thin sheet of piezoresistive rubber as main transducer element. The layout and patterning of top and bottom electrodes give 1024...... pressure sensitive cells and the use of high speed electronics and multiplexing algorithms provides frame rates of 100 Hz. The sensors tolerate overloads while showing a consistent output. The developed prototypes show a high potential not only for robotics, but also for use in sensorised human prosthetics....

High-Speed, Low-Power ADC for Digital Beam Forming (DBF) Systems, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — In Phase 1, Ridgetop Group designed a high-speed, yet low-power silicon germanium (SiGe)-based, analog-to-digital converter (ADC) to be a key element for digital...

Feature Tracking for High Speed AFM Imaging of Biopolymers.

Science.gov (United States)

Hartman, Brett; Andersson, Sean B

2018-03-31

The scanning speed of atomic force microscopes continues to advance with some current commercial microscopes achieving on the order of one frame per second and at least one reaching 10 frames per second. Despite the success of these instruments, even higher frame rates are needed with scan ranges larger than are currently achievable. Moreover, there is a significant installed base of slower instruments that would benefit from algorithmic approaches to increasing their frame rate without requiring significant hardware modifications. In this paper, we present an experimental demonstration of high speed scanning on an existing, non-high speed instrument, through the use of a feedback-based, feature-tracking algorithm that reduces imaging time by focusing on features of interest to reduce the total imaging area. Experiments on both circular and square gratings, as well as silicon steps and DNA strands show a reduction in imaging time by a factor of 3-12 over raster scanning, depending on the parameters chosen.

Process research on non-CZ silicon material

Science.gov (United States)

1982-01-01

High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

Development and operation of a novel PC-based high speed beam telescope for particle tracking using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Treis, J.

2002-08-01

A PC based high speed silicon microstrip beam telescope consisting of several independent modules is presented. Every module contains an AC-coupled double sided silicon microstrip sensor and a complete set of analog and digital signal processing electronics. A digital bus connects the modules with the DAQ PC. A trigger logic unit coordinates the operation of all modules of the telescope. The system architecture allows easy integration of any kind of device under test into the data acquisition chain. Signal digitization, pedestal correction, hit detection and zero suppression are done by hardware inside the modules, so that the amount of data per event is reduced by a factor of 80 compared to conventional readout systems. In combination with a two level data acquisition scheme, this allows event rates up to 7.6 kHz. This is a factor of 40 faster than conventional VME based beam telescopes while comparable analog performance is maintained achieving signal to noise ratios of up to 70:1. The telescope has been tested in the SPS testbeam at CERN. It has been adopted as the reference instrument for testbeam studies for the ATLAS pixel detector development. (orig.)

Optimization of Silicon MZM Fabrication Parameters for High Speed Short Reach Interconnects at 1310 nm

Directory of Open Access Journals (Sweden)

Alexis Abraham

2016-11-01

Full Text Available Optical modulators are key components to realize photonic circuits, and Mach-Zehnder modulators (MZM are often used for high speed short reach interconnects. In order to maximize the tolerable path loss of a transmission link at a given bitrate, the MZM needs to be optimized. However, the optimization can be complex since the overall link performance depends on various parameters, and, for the MZM in particular, implies several trade-offs between efficiency, losses, and bandwidth. In this work, we propose a general and rigorous method to optimize silicon MZM. We first describe the optical link, and the numerical method used for this study. Then we present the results associated to the active region for 1310 nm applications. An analytical model is generated, and allows us to quickly optimize the p-n junction depending of the targeted performances for the MZM. Taking into account the required optical link parameters, the maximum tolerable path losses for different length of MZM is determined. By applying this method, simulations show that the optimum MZM length for 25 Gbps applications is 4 mm with an efficiency of 1.87 V·cm, 0.52 dB/mm of losses. A tolerable path loss of more than 25 dB is obtained.

Coronal holes and high-speed wind streams

International Nuclear Information System (INIS)

Zirker, J.B.

1977-01-01

Coronal holes low have been identified as Bartel's M regions, i.e., sources of high-speed wind streams that produce recurrent geomagnetic variations. Throughout the Skylab period the polar caps of the Sun were coronal holes, and at lower latitudes the most persistent and recurrent holes were equatorial extensions of the polar caps. The holes rotated 'rigidly' at the equatorial synodic rate. They formed in regions of unipolar photospheric magnetic field, and their internal magnetic fields diverged rapidly with increasing distance from the sun. The geometry of the magnetic field in the inner corona seems to control both the physical properties of the holes and the global distribution of high-speed wind streams in the heliosphere. The latitude variation of the divergence of the coronal magnetic field lines produces corresponding variations in wind speed.During the years of declining solar activity the global field of the corona approximates a perturbed dipole. The divergence of field lines in each hemisphere produces a high-speed wind near the poles and low-speed wind in a narrow belt that coincides with the magnetic neutral sheet. The analysis of electron density measurements within a polar hole indicates that solar wind is accelerated principally in the region between 2 and 5 R/sub s/ and that mechanical wave pressure (possibly Alfven wave) may be responsible for the accleration of the wind. Phenomenological models for the birth and decay of coronal holes have been proposed. Attempts to explain the birth and rigid rotation of holes through dynamo action have been only partially successful. The 11-year variation of cosmic ray intensities at the earth may result from cyclic variation of open field regions associated with coronal holes

Brain inspired high performance electronics on flexible silicon

KAUST Repository

Sevilla, Galo T.

2014-06-01

Brain\\'s stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components [1], they can perform 1016 operations per second while consuming less power than an electrical light bulb. In order to perform the same amount of computation with today\\'s most advanced computers, the output of an entire power station would be needed. In that sense, to obtain brain like computation, ultra-fast devices with ultra-low power consumption will have to be integrated in extremely reduced areas, achievable only if brain folded structure is mimicked. Therefore, to allow brain-inspired computation, flexible and transparent platform will be needed to achieve foldable structures and their integration on asymmetric surfaces. In this work, we show a new method to fabricate 3D and planar FET architectures in flexible and semitransparent silicon fabric without comprising performance and maintaining cost/yield advantage offered by silicon-based electronics.

Design of two-terminal PNPN diode for high-density and high-speed memory applications

International Nuclear Information System (INIS)

Tong Xiaodong; Wu Hao; Liang Qingqing; Zhong Huicai; Zhu Huilong; Zhao Chao; Ye Tianchun

2014-01-01

A vertical two-terminal silicon PNPN diode is presented for use in a high-density memory cell. The device design for high-speed operations was studied with experiments and calibrated simulations, which proves that the proposed memory cell can be operated at nanosecond range. The static and dynamic power dissipations were also studied, which indicated the availability of the proposed memory cell for VLSI applications. Moreover, the memory cell is compatible with CMOS process, has little impact from process variation, and has good reliability. (semiconductor devices)

Floating Silicon Method

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter

2013-12-21

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Optimization of PAM-4 transmitters based on lumped silicon photonic MZMs for high-speed short-reach optical links.

Science.gov (United States)

Zhou, Shiyu; Wu, Hsin-Ta; Sadeghipour, Khosrov; Scarcella, Carmelo; Eason, Cormac; Rensing, Marc; Power, Mark J; Antony, Cleitus; O'Brien, Peter; Townsend, Paul D; Ossieur, Peter

2017-02-20

We demonstrate how to optimize the performance of PAM-4 transmitters based on lumped Silicon Photonic Mach-Zehnder Modulators (MZMs) for short-reach optical links. Firstly, we analyze the trade-off that occurs between extinction ratio and modulation loss when driving an MZM with a voltage swing less than the MZM's Vπ. This is important when driver circuits are realized in deep submicron CMOS process nodes. Next, a driving scheme based upon a switched capacitor approach is proposed to maximize the achievable bandwidth of the combined lumped MZM and CMOS driver chip. This scheme allows the use of lumped MZM for high speed optical links with reduced RF driver power consumption compared to the conventional approach of driving MZMs (with transmission line based electrodes) with a power amplifier. This is critical for upcoming short-reach link standards such as 400Gb/s 802.3 Ethernet. The driver chip was fabricated using a 65nm CMOS technology and flip-chipped on top of the Silicon Photonic chip (fabricated using IMEC's ISIPP25G technology) that contains the MZM. Open eyes with 4dB extinction ratio for a 36Gb/s (18Gbaud) PAM-4 signal are experimentally demonstrated. The electronic driver chip has a core area of only 0.11mm2 and consumes 236mW from 1.2V and 2.4V supply voltages. This corresponds to an energy efficiency of 6.55pJ/bit including Gray encoder and retiming, or 5.37pJ/bit for the driver circuit only.

High-speed and efficient silicon modulator based on forward-biased pin diodes

Directory of Open Access Journals (Sweden)

Suguru eAkiyama

2014-11-01

Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

Science.gov (United States)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

Energy Technology Data Exchange (ETDEWEB)

Villalpando, I. [Centro de Investigacion de los Recursos Naturales, Antigua Normal Rural, Salaices, Lopez, Chihuahua (Mexico); John, P.; Wilson, J. I. B., E-mail: isaelav@hotmail.com [School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14-4AS (United Kingdom)

2017-11-01

The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

International Nuclear Information System (INIS)

Villalpando, I.; John, P.; Wilson, J. I. B.

2017-01-01

The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

Silicon CMOS photonics platform for enabling high-speed DQPSK transceivers

NARCIS (Netherlands)

Sanchis, P.; Aamer, M.; Brimont, A.; Gutierrez, A.M.; Sotiropoulos, N.; Waardt, de H.; Thomson, D.J.; Gardes, F.Y.; Reed, G.T.; Ribaud, K.; Grosse, P.; Hartmann, J. M.; Fedeli, J.M.; Marris-Morini, D.; Cassan, E.; Vivien, L.; Vermeulen, D.; Roelkens, G.; Hakansson, A.

2013-01-01

In this work we review the results obtained under the framework of FP7-HELIOS project for integrated DQPSK transceivers in silicon photonics. A differential DQPSK receiver with balanced zero biased Germanium photodiodes has been demonstrated at 10Gbit/s with an error floor around 10-15. Furthermore,

Review of CMOS Integrated Circuit Technologies for High-Speed Photo-Detection.

Science.gov (United States)

Jeong, Gyu-Seob; Bae, Woorham; Jeong, Deog-Kyoon

2017-08-25

The bandwidth requirement of wireline communications has increased exponentially because of the ever-increasing demand for data centers and high-performance computing systems. However, it becomes difficult to satisfy the requirement with legacy electrical links which suffer from frequency-dependent losses due to skin effects, dielectric losses, channel reflections, and crosstalk, resulting in a severe bandwidth limitation. In order to overcome this challenge, it is necessary to introduce optical communication technology, which has been mainly used for long-reach communications, such as long-haul networks and metropolitan area networks, to the medium- and short-reach communication systems. However, there still remain important issues to be resolved to facilitate the adoption of the optical technologies. The most critical challenges are the energy efficiency and the cost competitiveness as compared to the legacy copper-based electrical communications. One possible solution is silicon photonics which has long been investigated by a number of research groups. Despite inherent incompatibility of silicon with the photonic world, silicon photonics is promising and is the only solution that can leverage the mature complementary metal-oxide-semiconductor (CMOS) technologies. Silicon photonics can be utilized in not only wireline communications but also countless sensor applications. This paper introduces a brief review of silicon photonics first and subsequently describes the history, overview, and categorization of the CMOS IC technology for high-speed photo-detection without enumerating the complex circuital expressions and terminologies.

High speed micromachining with high power UV laser

Science.gov (United States)

Patel, Rajesh S.; Bovatsek, James M.

2013-03-01

Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

Tungsten oxide nanowires grown on graphene oxide sheets as high-performance electrochromic material

International Nuclear Information System (INIS)

Chang, Xueting; Sun, Shibin; Dong, Lihua; Hu, Xiong; Yin, Yansheng

2014-01-01

Graphical abstract: Electrochromic mechanism of tungsten oxide nanowires-reduced graphene oxide composite. - Highlights: • A novel inorganic-nano-carbon hybrid composite was prepared. • The hybrid composite has sandwich-like structure. • The hybrid composite exhibited high-quality electrohcromic performance. - Abstract: In this work, we report the synthesis of a novel hybrid electrochromic composite through nucleation and growth of ultrathin tungsten oxide nanowires on graphene oxide sheets using a facile solvothermal route. The competition between the growth of tungsten oxide nanowires and the reduction of graphene oxide sheets leads to the formation of sandwich-structured tungsten oxide-reduced graphene oxide composite. Due to the strongly coupled effect between the ultrathin tungsten oxide nanowires and the reduced graphene oxide nanosheets, the novel electrochromic composite exhibited high-quality electrochromic performance with fast color-switching speed, good cyclic stability, and high coloration efficiency. The present tungsten oxide-reduced graphene oxide composite represents a new approach to prepare other inorganic-reduced graphene oxide hybrid materials for electrochemical applications

Development of a high-speed single-photon pixellated detector for visible wavelengths

CERN Document Server

Mac Raighne, Aaron; Mathot, Serge; McPhate, Jason; Vallerga, John; Jarron, Pierre; Brownlee, Colin; O’Shea, Val

2009-01-01

We present the development of a high-speed, single-photon counting, Hybrid Photo Detector (HPD). The HPD consists of a vacuum tube, containing the detector assembly, sealed with a transparent optical input window. Photons incident on the photocathode eject a photoelectron into a large electric field, which accelerates the incident electron onto a silicon detector. The silicon detector is bump bonded to a Medipix readout chip. This set-up allows for the detection and readout of low incident photon intensities at rates that are otherwise unattainable with current camera technology. Reported is the fabrication of the camera that brings together a range of sophisticated design and fabrication techniques and the expected theoretical imaging performance. Applications to cellular and molecular microscopy are also described in which single-photon-counting abilities at high frame rates are crucial

Dynamics of Radially Expanding Liquid Sheets

Science.gov (United States)

Majumdar, Nayanika; Tirumkudulu, Mahesh S.

2018-04-01

The process of atomization often involves ejecting thin liquid sheets at high speeds from a nozzle that causes the sheet to flap violently and break up into fine droplets. The flapping of the liquid sheet has long been attributed to the sheet's interaction with the surrounding gas phase. Here, we present experimental evidence to the contrary and show that the flapping is caused by the thinning of the liquid sheet as it spreads out from the nozzle exit. The measured growth rates of the waves agree remarkably well with the predictions of a recent theory that accounts for the sheet's thinning but ignores aerodynamic interactions. We anticipate these results to not only lead to more accurate predictions of the final drop-size distribution but also enable more efficient designs of atomizers.

Dynamical fragmentation and very high speed projection of micro-particulates with a pulsed electrons generator

International Nuclear Information System (INIS)

Cassany, B.; Courchinoux, R.; Bertron, I.; Malaise, F.; Hebert, D.

2003-01-01

This paper shows how to use a pulsed electrons beam to simulate the dynamical fragmentation of copper sheets and to eject diamond, tantalum and tungsten micro-particulates at very high speed (∼1000 m/s). These experiments were performed with the electrons generator CESAR of CEA/CESTA (France). (J.S.)

Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

NARCIS (Netherlands)

Sammak, A.

2012-01-01

Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

High-speed blanking of copper alloy sheets: Material modeling and simulation

Science.gov (United States)

Husson, Ch.; Ahzi, S.; Daridon, L.

2006-08-01

To optimize the blanking process of thin copper sheets ( ≈ 1. mm thickness), it is necessary to study the influence of the process parameters such as the punch-die clearance and the wear of the punch and the die. For high stroke rates, the strain rate developed in the work-piece can be very high. Therefore, the material modeling must include the dynamic effects.For the modeling part, we propose an elastic-viscoplastic material model combined with a non-linear isotropic damage evolution law based on the theory of the continuum damage mechanics. Our proposed modeling is valid for a wide range of strain rates and temperatures. Finite Element simulations, using the commercial code ABAQUS/Explicit, of the blanking process are then conducted and the results are compared to the experimental investigations. The predicted cut edge of the blanked part and the punch-force displacement curves are discussed as function of the process parameters. The evolution of the shape errors (roll-over depth, fracture depth, shearing depth, and burr formation) as function of the punch-die clearance, the punch and the die wear, and the contact punch/die/blank-holder are presented. A discussion on the different stages of the blanking process as function of the processing parameters is given. The predicted results of the blanking dependence on strain-rate and temperature using our modeling are presented (for the plasticity and damage). The comparison our model results with the experimental ones shows a good agreement.

High speed atom source

International Nuclear Information System (INIS)

Hoshino, Hitoshi.

1990-01-01

In a high speed atom source, since the speed is not identical between ions and electrons, no sufficient neutralizing effect for ionic rays due to the mixing of the ionic rays and the electron rays can be obtained failing to obtain high speed atomic rays at high density. In view of the above, a speed control means is disposed for equalizing the speed of ions forming ionic rays and the speed of electrons forming electron rays. Further, incident angle of the electron rays and/or ionic rays to a magnet or an electrode is made variable. As a result, the relative speed between the ions and the electrons to the processing direction is reduced to zero, in which the probability of association between the ions and the electrons due to the coulomb force is increased to improve the neutralizing efficiency to easily obtain fine and high density high speed electron rays. Further, by varying the incident angle, a track capable of obtaining an ideal mixing depending on the energy of the neutralized ionic rays is formed. Since the high speed electron rays has such high density, they can be irradiated easily to the minute region of the specimen. (N.H.)

TECHNICAL NOTE: High-speed grinding using thin abrasive disks for microcomponents

Science.gov (United States)

Yeo, S. H.; Balon, S. A. P.

2002-01-01

This paper introduces the development of a high-speed grinding device for cylindrical grinding of microcomponents made of hard and brittle materials. The study made use of an ultraprecision diamond turning machine tool as a basic platform. The novelty of the device is based on the high-speed air bearing spindle with a thin grinding wheel, similar to the dicing technology for silicon wafer fabrication. The spindle attachment is inclined at an angle to the main spindle which holds the precision fixture mechanism via the vacuum chuck. Experiments have been conducted to verify the design and implementation of the grinding methodology. A feature size as small as 31 μm in diameter and average surface roughness of 98 nm were obtained in the experimental work. It is found that the work done is capable of manufacturing miniature components, such as microcylindrical stepped shafts.

Non-contact sheet forming using lasers applied to a high strength aluminum alloy

Directory of Open Access Journals (Sweden)

Rafael Humberto Mota Siqueira

2016-07-01

Full Text Available Laser beam forming (LBF is a contactless mechanical process accomplished by the introduction of thermal stresses on the surface of a material using a laser in order to induce plastic deformation. In this work, LBF was performed on 1.6 mm thick sheets of a high strength aluminum alloy, AA6013-T4 class by using a defocused continuous Yb-fiber laser beam of 0.6 mm in diameter on the sheet top surface. The laser power and process speed were varied from 200 W to 2000 W and from 3 to 30 mm/s, respectively. For these experimental conditions, the bending angle of the sheet ranged from 0.1° to 2.5° per run. In the highest bending angle condition, 1000 W and 30 mm/s, the depth of remelted pool was 0.6 mm and the microstructure near the plate bottom surface remained unaltered. For the whole set of experimental conditions, the hardness remained constant at approximately 100 HV, which is similar to the base material. In order to verify the applicability of the method, some previously T-welded sheets were straightened. The method was efficient in correcting the distortion of the sheets with a bending angle up to 5°.

Tribology study of reduced graphene oxide sheets on silicon substrate synthesized via covalent assembly.

Science.gov (United States)

Ou, Junfei; Wang, Jinqing; Liu, Sheng; Mu, Bo; Ren, Junfang; Wang, Honggang; Yang, Shengrong

2010-10-19

Reduced graphene oxide (RGO) sheets were covalently assembled onto silicon wafers via a multistep route based on the chemical adsorption and thermal reduction of graphene oxide (GO). The formation and microstructure of RGO were analyzed by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Raman spectroscopy, and water contact angle (WCA) measurements. Characterization by atomic force microscopy (AFM) was performed to evaluate the morphology and microtribological behaviors of the samples. Macrotribological performance was tested on a ball-on-plate tribometer. Results show that the assembled RGO possesses good friction reduction and antiwear ability, properties ascribed to its intrinsic structure, that is, the covalent bonding to the substrate and self-lubricating property of RGO.

The Design of a High Speed Low Power Phase Locked Loop

CERN Document Server

Liu, Tiankuan; Hou, Suen; Liang, Zhihua; Liu, Chonghan; Su, Da-Shung; Teng, Ping-Kun; Xiang, Annie C; Ye, Jingbo

2009-01-01

The upgrade of the ATLAS Liquid Argon Calorimeter readout system calls for the development of radiation tolerant, high speed and low power serializer ASIC. We have designed a phase locked loop using a commercial 0.25-μm Silicon-on- Sapphire (SoS) CMOS technology. Post-layout simulation indicates that tuning range is 3.79 – 5.01 GHz and power consumption is 104 mW. The PLL has been submitted for fabrication. The design and simulation results are presented.

Effect of Temperature and Sheet Temper on Isothermal Solidification Kinetics in Clad Aluminum Brazing Sheet

Science.gov (United States)

Benoit, Michael J.; Whitney, Mark A.; Wells, Mary A.; Winkler, Sooky

2016-09-01

Isothermal solidification (IS) is a phenomenon observed in clad aluminum brazing sheets, wherein the amount of liquid clad metal is reduced by penetration of the liquid clad into the core. The objective of the current investigation is to quantify the rate of IS through the use of a previously derived parameter, the Interface Rate Constant (IRC). The effect of peak temperature and initial sheet temper on IS kinetics were investigated. The results demonstrated that IS is due to the diffusion of silicon (Si) from the liquid clad layer into the solid core. Reduced amounts of liquid clad at long liquid duration times, a roughened sheet surface, and differences in resolidified clad layer morphology between sheet tempers were observed. Increased IS kinetics were predicted at higher temperatures by an IRC model as well as by experimentally determined IRC values; however, the magnitudes of these values are not in good agreement due to deficiencies in the model when applied to alloys. IS kinetics were found to be higher for sheets in the fully annealed condition when compared with work-hardened sheets, due to the influence of core grain boundaries providing high diffusivity pathways for Si diffusion, resulting in more rapid liquid clad penetration.

High-speed all-optical logic inverter based on stimulated Raman scattering in silicon nanocrystal.

Science.gov (United States)

Sen, Mrinal; Das, Mukul K

2015-11-01

In this paper, we propose a new device architecture for an all-optical logic inverter (NOT gate), which is cascadable with a similar device. The inverter is based on stimulated Raman scattering in silicon nanocrystal waveguides, which are embedded in a silicon photonic crystal structure. The Raman response function of silicon nanocrystal is evaluated to explore the transfer characteristic of the inverter. A maximum product criterion for the noise margin is taken to analyze the cascadability of the inverter. The time domain response of the inverter, which explores successful inversion operation at 100 Gb/s, is analyzed. Propagation delay of the inverter is on the order of 5 ps, which is less than the delay in most of the electronic logic families as of today. Overall dimension of the device is around 755  μm ×15  μm, which ensures integration compatibility with the matured silicon industry.

High-Speed Friction Stir Welding of AA7075-T6 Sheet: Microstructure, Mechanical Properties, Micro-texture, and Thermal History

Science.gov (United States)

Zhang, Jingyi; Upadhyay, Piyush; Hovanski, Yuri; Field, David P.

2018-01-01

Friction stir welding (FSW) is a cost-effective and high-quality joining process for aluminum alloys (especially heat-treatable alloys) that is historically operated at lower joining speeds (up to hundreds of millimeters per minute). In this study, we present a microstructural analysis of friction stir welded AA7075-T6 blanks with high welding speeds up to 3 M/min. Textures, microstructures, mechanical properties, and weld quality are analyzed using TEM, EBSD, metallographic imaging, and Vickers hardness. The higher welding speed results in narrower, stronger heat-affected zones (HAZs) and also higher hardness in the nugget zones. The material flow direction in the nugget zone is found to be leaning towards the welding direction as the welding speed increases. Results are coupled with welding parameters and thermal history to aid in the understanding of the complex material flow and texture gradients within the welds in an effort to optimize welding parameters for high-speed processing.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

Science.gov (United States)

Fiegl, G. F.; Bonora, A. C.

1980-01-01

The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

Numerical Simulation Of Silicon-Ribbon Growth

Science.gov (United States)

Woda, Ben K.; Kuo, Chin-Po; Utku, Senol; Ray, Sujit Kumar

1987-01-01

Mathematical model includes nonlinear effects. In development simulates growth of silicon ribbon from melt. Takes account of entire temperature and stress history of ribbon. Numerical simulations performed with new model helps in search for temperature distribution, pulling speed, and other conditions favoring growth of wide, flat, relatively defect-free silicon ribbons for solar photovoltaic cells at economically attractive, high production rates. Also applicable to materials other than silicon.

Tribological properties of ceramics evaluated at low sliding speeds

International Nuclear Information System (INIS)

Hayashi, Kazunori; Kano, Shigeki

1998-03-01

Low speed tribological properties of stainless steel, ceramics and hard metals were investigated in air at room temperature and in nitrogen atmosphere at high temperature for the consideration of sliding type support structure in intermediate heat exchanger of fast reactor. The following results are obtained. (1) In low speed friction measurements in air at room temperature, friction coefficients of ceramics and hard metals were smaller than that of stainless steel. Surface roughness of the specimens increased the friction force and silicon carbide showed the smallest friction coefficient among the specimens with mirror polished surface. (2) From the results of friction measurements at various sliding speeds in air at room temperature, friction coefficients of ceramics and hard metals were always stable and lower than that of stainless steel. Among ceramics, PSZ showed the smallest friction and silicon carbide showed the most stable friction at any sliding speeds. (3) Friction coefficients of silicon carbide and silicon nitride in nitrogen atmosphere at high temperature showed low values as measured at room temperature. On the contrary, friction coefficient of stainless steel measured in nitrogen atmosphere at high temperature were higher than that measured at room temperature, over 1. (4) In the reciprocal sliding tests in nitrogen atmosphere at high temperature, friction coefficient of stainless steel were over 1. On the contrary, the friction coefficients of ceramics were less than 1 instead of chipping during the slidings. (author)

High-latitude Conic Current Sheets in the Solar Wind

Energy Technology Data Exchange (ETDEWEB)

Khabarova, Olga V.; Obridko, Vladimir N.; Kharshiladze, Alexander F. [Pushkov Institute of Terrestrial Magnetism, Ionosphere and Radio Wave Propagation of the Russian Academy of Sciences (IZMIRAN), Moscow (Russian Federation); Malova, Helmi V. [Scobeltsyn Nuclear Physics Institute of Lomonosov Moscow State University, Moscow (Russian Federation); Kislov, Roman A.; Zelenyi, Lev M. [Space Research Centre of the Polish Academy of Sciences (CBK PAN), Warsaw (Poland); Tokumaru, Munetoshi; Fujiki, Ken’ichi [Institute for Space-Earth Environmental Research, Nagoya University (Japan); Sokół, Justyna M.; Grzedzielski, Stan [Space Research Centre of the Polish Academy of Sciences (CBK), Warsaw (Poland)

2017-02-10

We provide observational evidence for the existence of large-scale cylindrical (or conic-like) current sheets (CCSs) at high heliolatitudes. Long-lived CCSs were detected by Ulysses during its passages over the South Solar Pole in 1994 and 2007. The characteristic scale of these tornado-like structures is several times less than a typical width of coronal holes within which the CCSs are observed. CCS crossings are characterized by a dramatic decrease in the solar wind speed and plasma beta typical for predicted profiles of CCSs. Ulysses crossed the same CCS at different heliolatitudes at 2–3 au several times in 1994, as the CCS was declined from the rotation axis and corotated with the Sun. In 2007, a CCS was detected directly over the South Pole, and its structure was strongly highlighted by the interaction with comet McNaught. Restorations of solar coronal magnetic field lines reveal the occurrence of conic-like magnetic separators over the solar poles in both 1994 and 2007. Such separators exist only during solar minima. Interplanetary scintillation data analysis confirms the presence of long-lived low-speed regions surrounded by the typical polar high-speed solar wind in solar minima. Energetic particle flux enhancements up to several MeV/ nuc are observed at edges of the CCSs. We built simple MHD models of a CCS to illustrate its key features. The CCSs may be formed as a result of nonaxiality of the solar rotation axis and magnetic axis, as predicted by the Fisk–Parker hybrid heliospheric magnetic field model in the modification of Burger and coworkers.

Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

Science.gov (United States)

Johnson, C. M.

1980-12-01

The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

Real-time nanofabrication with high-speed atomic force microscopy

International Nuclear Information System (INIS)

Vicary, J A; Miles, M J

2009-01-01

The ability to follow nanoscale processes in real-time has obvious benefits for the future of material science. In particular, the ability to evaluate the success of fabrication processes in situ would be an advantage for many in the semiconductor industry. We report on the application of a previously described high-speed atomic force microscope (AFM) for nanofabrication. The specific fabrication method presented here concerns the modification of a silicon surface by locally oxidizing the region in the vicinity of the AFM tip. Oxide features were fabricated during imaging, with relative tip-sample velocities of up to 10 cm s -1 , and with a data capture rate of 15 fps.

Deformation mechanisms of silicon during nanoscratching

Energy Technology Data Exchange (ETDEWEB)

Gassilloud, R.; Gasser, P.; Buerki, G.; Michler, J. [EMPA, Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Ballif, C. [University of Neuchatel, A.-L. Breguet 2, 2000 Neuchatel (Switzerland)

2005-12-01

The deformation mechanisms of silicon {l_brace}001{r_brace} surfaces during nanoscratching were found to depend strongly on the loading conditions. Nanoscratches with increasing load were performed at 2 {mu}m/s (low velocity) and 100 {mu}m/s (high velocity). The load-penetration-distance curves acquired during the scratching process at low velocity suggests that two deformation regimes can be defined, an elasto-plastic regime at low loads and a fully plastic regime at high loads. High resolution scanning electron microscopy of the damaged location shows that the residual scratch morphologies are strongly influenced by the scratch velocity and the applied load. Micro-Raman spectroscopy shows that after pressure release, the deformed volume inside the nanoscratch is mainly composed of amorphous silicon and Si-XII at low scratch speeds and of amorphous silicon at high speeds. Transmission electron microscopy shows that Si nanocrystals are embedded in an amorphous matrix at low speeds, whereas at high speeds the transformed zone is completely amorphous. Furthermore, the extend of the transformed zone is almost independent of the scratching speed and is delimited by a dislocation rich area that extends about as deep as the contact radius into the surface. To explain the observed phase and defect distribution a contact mechanics based decompression model that takes into account the load, the velocity, the materials properties and the contact radius in scratching is proposed. It shows that the decompression rate is higher at low penetration depth, which is consistent with the observation of amorphous silicon in this case. The stress field under the tip is computed using an elastic contact mechanics model based on Hertz's theory. The model explains the observed shape of the transformed zone and suggests that during load increase, phase transformation takes place prior to dislocation nucleation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

In-process tool rotational speed variation with constant heat input in friction stir welding of AZ31 sheets with variable thickness

Science.gov (United States)

Buffa, Gianluca; Campanella, Davide; Forcellese, Archimede; Fratini, Livan; Simoncini, Michela

2017-10-01

In the present work, friction stir welding experiments on AZ31 magnesium alloy sheets, characterized by a variable thickness along the welding line, were carried out. The approach adapted during welding consisted in maintaining constant the heat input to the joint. To this purpose, the rotational speed of the pin tool was increased with decreasing thickness and decreased with increasing thickness in order to obtain the same temperatures during welding. The amount by which the rotational speed was changed as a function of the sheet thickness was defined on the basis of the results given by FEM simulations of the FSW process. Finally, the effect of the in-process variation of the tool rotational speed on the mechanical and microstructural properties of FSWed joints was analysed by comparing both the nominal stress vs. nominal strain curves and microstructure of FSWed joints obtained in different process conditions. It was observed that FSW performed by keeping constant the heat input to the joint leads to almost coincident results both in terms of the curve shape, ultimate tensile strength and ultimate elongation values, and microstructure.

Stable configurations of graphene on silicon

Energy Technology Data Exchange (ETDEWEB)

Javvaji, Brahmanandam; Shenoy, Bhamy Maithry [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Ravikumar, Abhilash [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India); Hegde, G.M. [Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); Rizwan, M.R. [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India)

2017-08-31

Highlights: • Simulations of epitaxial growth process for silicon–graphene system is performed. • Identified the most favourable orientation of graphene sheet on silicon substrate. • Atomic local strain due to the silicon–carbon bond formation is analyzed. - Abstract: Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon–silicon dimer formation is changed due to silicon–carbon bonding. These results may help further in band structure engineering of silicon–graphene lattice.

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Effects of welding parameters on friction stir spot welding of high density polyethylene sheets

International Nuclear Information System (INIS)

Bilici, Mustafa Kemal; Yukler, Ahmet Irfan

2012-01-01

Graphical abstract: (a) Schematic illustration of the cross section of a friction stir spot weld and (b) Geometry of the weld bonded area, x: nugget thickness and y: the thickness of the upper sheet. Highlights: → Welding parameters affect the FSSW nugget formation and the strength of the joint. → Melting of polyethylene occurred in the vicinity of the tool pin. → The joint that fractures with a pull nugget failure mode has a higher strength. -- Abstract: Friction stir spot welding parameters affect the weld strength of thermoplastics, such as high density polyethylene (HDPE) sheets. The effects of the welding parameters on static strength of friction stir spot welds of high density polyethylene sheets were investigated. For maximizing the weld strength, the selection of welding parameters is very important. In lap-shear tests two fracture modes were observed; cross nugget failure and pull nugget failure. The tool rotational speed, tool plunge depth and dwell time were determined to be important in the joint formation and its strength. The joint which had a better strength fails with a pull nugget failure morphology. Weld cross section image analysis of the joints were done with a video spectral comparator. The plunge rate of the tool was determined to have a negligible effect on friction stir spot welding.

Microstructure and texture evolution of ultra-thin grain-oriented silicon steel sheet fabricated using strip casting and three-stage cold rolling method

Energy Technology Data Exchange (ETDEWEB)

Song, Hong-Yu; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Wang, Yin-Ping; Wang, Guo-Dong

2017-03-15

A 0.1 mm-thick grain-oriented silicon steel sheet was successfully produced using strip casting and three-stage cold rolling method. The microstructure, texture and inhibitor evolution during the processing was briefly analyzed. It was found that Goss texture was absent in the hot rolled sheet because of the lack of shear deformation. After normalizing, a large number of dispersed MnS precipitates with the size range of 15–90 nm were produced. During first cold rolling, dense shear bands were generated in the deformed ferrite grains, resulting in the intense Goss texture after first intermediate annealing. The microstructure was further refined and homogenized during the subsequent cold rolling and annealing processes. After primary recrystallization annealing, a homogeneous microstructure consisting of fine and equiaxed grains was produced while the associated texture was characterized by a strong γ-fiber texture. Finally, a complete secondary recrystallization microstructure consisting of entirely large Goss grains was produced. The magnetic induction B{sub 8} and iron loss P{sub 10/400} was 1.79 T and 6.9 W/kg, respectively. - Highlights: • Ultra-thin grain-oriented silicon steel was produced by strip casting process. • Microstructure, texture and inhibitor evolution was briefly investigated. • Goss texture was absent in primary recrystallization annealed sheet. • MnS precipitates with a size range of 15–90 nm formed after normalizing. • A complete secondary recrystallization microstructure was produced.

The effect of ambient pressure on ejecta sheets from free-surface ablation

KAUST Repository

Marston, J. O.; Mansoor, Mohammad M.; Thoroddsen, Sigurdur T; Truscott, T. T.

2016-01-01

We present observations from an experimental study of the ablation of a free liquid surface promoted by a focused laser pulse, causing a rapid discharge of liquid in the form of a very thin conical-shaped sheet. In order to capture the dynamics, we employ a state-of-the-art ultra-high-speed video camera capable of capturing events at (Formula presented.) fps with shutter speeds down to 20 ns, whereby we were able to capture not only the ejecta sheet, but also the shock wave, emerging at speeds of up to 1.75 km/s, which is thus found to be hypersonic (Mach 5). Experiments were performed at a range of ambient pressures in order to study the effect of air drag on the evolution of the sheet, which was always observed to dome over, even at pressures as low as 3.8 kPa. At reduced pressures, the extended sheet evolution led to the formation of interference fringe patterns from which, by comparison with the opening speed of rupture, we were able to determine the ejecta thickness. © 2016, Springer-Verlag Berlin Heidelberg.

The effect of ambient pressure on ejecta sheets from free-surface ablation

KAUST Repository

Marston, J. O.

2016-04-16

We present observations from an experimental study of the ablation of a free liquid surface promoted by a focused laser pulse, causing a rapid discharge of liquid in the form of a very thin conical-shaped sheet. In order to capture the dynamics, we employ a state-of-the-art ultra-high-speed video camera capable of capturing events at (Formula presented.) fps with shutter speeds down to 20 ns, whereby we were able to capture not only the ejecta sheet, but also the shock wave, emerging at speeds of up to 1.75 km/s, which is thus found to be hypersonic (Mach 5). Experiments were performed at a range of ambient pressures in order to study the effect of air drag on the evolution of the sheet, which was always observed to dome over, even at pressures as low as 3.8 kPa. At reduced pressures, the extended sheet evolution led to the formation of interference fringe patterns from which, by comparison with the opening speed of rupture, we were able to determine the ejecta thickness. © 2016, Springer-Verlag Berlin Heidelberg.

75 FR 25927 - Vehicle/Track Interaction Safety Standards; High-Speed and High Cant Deficiency Operations

Science.gov (United States)

2010-05-10

... Transporte;* Sheet Metal Workers International Association (SMWIA); Tourist Railway Association, Inc... over their intended service routes using instrumented wheelsets to directly measure forces between the... Carbody Acceleration Events During route testing of the MARC-III multi-level car at speeds to 125 m.p.h...

Iron solubility in highly boron-doped silicon

International Nuclear Information System (INIS)

McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

1998-01-01

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

Silylated functionalized silicon-based composite as anode with excellent cyclic performance for lithium-ion battery

Science.gov (United States)

Li, Xiao; Tian, Xiaodong; Yang, Tao; Wang, Wei; Song, Yan; Guo, Quangui; Liu, Zhanjun

2018-05-01

Inferior cycling stability and rate performance respectively caused by rigorous volume change and poor electrical conductivity were the main challenge of state-of-the-art Silicon-based electrode. In this work, silylated functionalized exfoliated graphite oxide (EGO)/silicon@amorphous carbon (3-APTS-EGO/Si@C) was synthesized by adopting silane as intermediate to connect Si particles with EGO sheets followed by introduction of amorphous carbon. The result suggested that 3-Aminopropyltriethoxysilan connected the EGO sheets and Si nanoparticles via covalent bonds. Owing to the strong covalent interaction and the synergistic effect between the silicon, EGO sheets and amorphous carbon, 3-APTS-EGO/Si@C composite possessed a high capacity of 774 mAh g-1 even after 450 cycles at 0.4 A g-1 with the retention capacity of 97%. This work also provided an effective strategy to improve the long cycling life performance of Si-based electrode.

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

High-Speed Friction Stir Welding of AA7075-T6 Sheet: Microstructure, Mechanical Properties, Micro-texture, and Thermal History

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jingyi; Upadhyay, Piyush; Hovanski, Yuri; Field, David P.

2017-11-20

Friction-stir-welding (FSW) is a cost-effective and high quality joining process for aluminum alloys (especially heat-treatable allo ys) that has been applied successfully in the aerospace industry. However, the full potential of FSW on more cost-sensitive applications is still limited by the production rate, namely the welding speed of the process. The majority of literature evaluating FSW of aluminum alloys is based on welds made in the range of welding speeds around hundreds of millimeters per minute, and only a handful are at a moderate speed of 1 m/min. In this study we present a microstructural analysis of friction stir welded AA7075-T6 blanks with welding speeds up to 3 m/min. Textures, microstructures, mechanical properties, and weld quality are analyzed using TEM, EBSD, metallographic imaging, and Vickers hardness. Results are coupled with welding parameters to aid in the understanding of the complex material flow and texture gradients within the welds in an effort to optimize welding parameters for high speed processing.

Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

DEFF Research Database (Denmark)

Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

2004-01-01

Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

OpenAIRE

Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

2014-01-01

The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

Characterization of microstructure, texture and magnetic properties in twin-roll casting high silicon non-oriented electrical steel

Energy Technology Data Exchange (ETDEWEB)

Li, Hao-Ze; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Liu, Zhen-Yu, E-mail: zyliu@mail.neu.edu.cn; Lu, Hui-Hu; Song, Hong-Yu; Wang, Guo-Dong

2014-02-15

An Fe-6.5 wt.% Si-0.3 wt.% Al as-cast sheet was produced by twin-roll strip casting process, then treated with hot rolling, warm rolling and annealing. A detailed study of the microstructure and texture evolution at different processing stages was carried out by optical microscopy, X-ray diffraction and electron backscattered diffraction analysis. The initial as-cast strip showed strong columnar grains and pronounced < 001 >//ND texture. The hot rolled and warm rolled sheets were characterized by large amounts of shear bands distributed through the thickness together with strong < 110 >//RD texture and weak < 111 >//ND texture. After annealing, detrimental < 111 >//ND texture almost disappeared while beneficial (001)<210 >, (001)<010 >, (115)<5 − 10 1 > and (410) < 001 > recrystallization textures were formed, thus the magnetic induction of the annealed sheet was significantly improved. The recrystallization texture in the present study could be explained by preferred nucleation and grain growth mechanism. - Highlights: • A high silicon as-cast strip with columnar structure was produced. • A thin warm rolled sheet without large edge cracks was obtained. • Microstructure and texture evolution at each stage were investigated. • Beneficial (001)<210 >, (001)<010 >, (410)<001 > recrystallization textures were formed. • The magnetic induction of annealed sheet was significantly improved.

Silicon hybrid integration

International Nuclear Information System (INIS)

Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

2011-01-01

Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

High damage tolerance of electrochemically lithiated silicon

Science.gov (United States)

Wang, Xueju; Fan, Feifei; Wang, Jiangwei; Wang, Haoran; Tao, Siyu; Yang, Avery; Liu, Yang; Beng Chew, Huck; Mao, Scott X.; Zhu, Ting; Xia, Shuman

2015-01-01

Mechanical degradation and resultant capacity fade in high-capacity electrode materials critically hinder their use in high-performance rechargeable batteries. Despite tremendous efforts devoted to the study of the electro–chemo–mechanical behaviours of high-capacity electrode materials, their fracture properties and mechanisms remain largely unknown. Here we report a nanomechanical study on the damage tolerance of electrochemically lithiated silicon. Our in situ transmission electron microscopy experiments reveal a striking contrast of brittle fracture in pristine silicon versus ductile tensile deformation in fully lithiated silicon. Quantitative fracture toughness measurements by nanoindentation show a rapid brittle-to-ductile transition of fracture as the lithium-to-silicon molar ratio is increased to above 1.5. Molecular dynamics simulations elucidate the mechanistic underpinnings of the brittle-to-ductile transition governed by atomic bonding and lithiation-induced toughening. Our results reveal the high damage tolerance in amorphous lithium-rich silicon alloys and have important implications for the development of durable rechargeable batteries. PMID:26400671

Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

International Nuclear Information System (INIS)

Casse, G.; Glaser, M.; Lemeilleur, F.; Ruzin, A.; Wegrzecki, M.

1999-01-01

The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentration (>10 17 atoms cm -3 ) cannot readily be achieved during the FZ silicon refinement. The diffusion of oxygen at elevated temperatures from a SiO 2 layer grown on both sides of a silicon wafer is a simple and effective technique to achieve high and uniform concentrations of oxygen throughout the bulk of a 300 μm thick silicon wafer

Application Of CO2 Lasers To High Speed Blanking

Science.gov (United States)

Grenier, L. E.

1986-11-01

While laser cutting of sheetmetal has attained wide acceptance in the automotive industry for the purposes of prototyping and very limited preproduction work, the production rates possible with currently available systems have precluded the use of this technique in a production environment. The device design to be described embodies a high speed X-Y positioner carrying a cutting head with limited Z-axis capability. This approach confers two main benefits, first, production rate is limited only by laser power, since the positioner technology selected will permit movement at rates up to 1.5 m/s (60 in/s), second, the use of a high speed non-contact surface follower to control the Z-axis movement reduces the need to clamp the workpiece rigidly to a precision reference surface. The realized reduction of the clamping requirement permits some latitude in the feed methods that can be employed, allowing the use of coil or sheet feeding as appropriate. The author will provide estimated production rates for the proposed design and demonstrate that a suitable choice of laser source and material feed will permit the production of parts at a rate and cost comparable to conventional blanking with the advantage of much greater flexibility and reduced retooling time.

High-efficient solar cells with porous silicon

International Nuclear Information System (INIS)

Migunova, A.A.

2002-01-01

It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

Large-size, high-uniformity, random silver nanowire networks as transparent electrodes for crystalline silicon wafer solar cells.

Science.gov (United States)

Xie, Shouyi; Ouyang, Zi; Jia, Baohua; Gu, Min

2013-05-06

Metal nanowire networks are emerging as next generation transparent electrodes for photovoltaic devices. We demonstrate the application of random silver nanowire networks as the top electrode on crystalline silicon wafer solar cells. The dependence of transmittance and sheet resistance on the surface coverage is measured. Superior optical and electrical properties are observed due to the large-size, highly-uniform nature of these networks. When applying the nanowire networks on the solar cells with an optimized two-step annealing process, we achieved as large as 19% enhancement on the energy conversion efficiency. The detailed analysis reveals that the enhancement is mainly caused by the improved electrical properties of the solar cells due to the silver nanowire networks. Our result reveals that this technology is a promising alternative transparent electrode technology for crystalline silicon wafer solar cells.

High-End Silicon PDICs

Directory of Open Access Journals (Sweden)

H. Zimmermann

2008-05-01

Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

Simulation of High-Speed Droplet Impact Against Dry Substrates with Partial Velocity Slip

Science.gov (United States)

Kondo, Tomoki; Ando, Keita

2017-11-01

High-speed droplet impact can be used to clean substrates such as silicon wafers. Radially spreading shear flow after the impact may allow for mechanically removing contaminant particles at substrate surfaces. Since it is a big challenge to experimentally explore such complicated flow that exhibits contact line motion and water hammer, its flow feature is not well understood. Here, we aim to numerically evaluate shear flow caused by the impact of a spherical water droplet (of submillimeter sizes) at high speed (up to 50 m/s) against a dry rigid wall. We model the flow based on compressible Navier-Stokes equations with Stokes' hypothesis and solve them by a high-order-accurate finite volume method equipped with shock and interface capturing. To treat the motion of a contact line between the three phases (the droplet, the rigid wall, and the ambient air) in a robust manner, we permit velocity slip at the wall with Navier's model, for wall slip is known to come into play under steep velocity gradients that can arise from high-speed droplet impact. In our presentation, we will examine radially spreading flow after the droplet impact and the resulting wall shear stress generation from the simulation. This work was supported by JSPS KAKENHI Grant Number JP17J02211.

High speed dry machining of MMCs with diamond tools

International Nuclear Information System (INIS)

Collins, J.L.

2001-01-01

The increasing use of metal matrix composites (MMCs) has raised new issues in their machining. Industrial demands for higher speed and dry machining of MMCs with improved component production to closer tolerances have driven the development of new tool materials. In particular, the wear characteristics of synthetic diamond tooling satisfy many of the requirements imposed in cutting these highly abrasive workpieces. The use of diamond tool materials, such as polycrystalline diamond (PCD), has resulted in tool life improvements which, allied with environmental considerations, show great potential for the development of dry cutting. This paper explores the wear characteristics of PCD, which is highly suited to the dry machining of particulate silicon carbide MMCs. Also, two further diamond tool materials are evaluated - chemical vapor deposition (CVD) thick layer diamond and synthetic single crystal diamond. Their suitability for the efficient machining of high volume fraction MMC materials is shown and their potential impact an the subsequent acceptance and integration of MMCs into engineering components is discussed. (author)

Comparison of microrings and microdisks for high-speed optical modulation in silicon photonics

Science.gov (United States)

Ying, Zhoufeng; Wang, Zheng; Zhao, Zheng; Dhar, Shounak; Pan, David Z.; Soref, Richard; Chen, Ray T.

2018-03-01

The past several decades have witnessed the gradual transition from electrical to optical interconnects, ranging from long-haul telecommunication to chip-to-chip interconnects. As one type of key component in integrated optical interconnect and high-performance computing, optical modulators have been well developed these past few years, including ultrahigh-speed microring and microdisk modulators. In this paper, a comparison between microring and microdisk modulators is well analyzed in terms of dimensions, static and dynamic power consumption, and fabrication tolerance. The results show that microdisks have advantages over microrings in these aspects, which gives instructions to the chip design of high-density integrated systems for optical interconnects and optical computing.

High speed photography, videography, and photonics III; Proceedings of the Meeting, San Diego, CA, August 22, 23, 1985

Science.gov (United States)

Ponseggi, B. G. (Editor); Johnson, H. C. (Editor)

1985-01-01

Papers are presented on the picosecond electronic framing camera, photogrammetric techniques using high-speed cineradiography, picosecond semiconductor lasers for characterizing high-speed image shutters, the measurement of dynamic strain by high-speed moire photography, the fast framing camera with independent frame adjustments, design considerations for a data recording system, and nanosecond optical shutters. Consideration is given to boundary-layer transition detectors, holographic imaging, laser holographic interferometry in wind tunnels, heterodyne holographic interferometry, a multispectral video imaging and analysis system, a gated intensified camera, a charge-injection-device profile camera, a gated silicon-intensified-target streak tube and nanosecond-gated photoemissive shutter tubes. Topics discussed include high time-space resolved photography of lasers, time-resolved X-ray spectrographic instrumentation for laser studies, a time-resolving X-ray spectrometer, a femtosecond streak camera, streak tubes and cameras, and a short pulse X-ray diagnostic development facility.

Silicon photonic IC embedded optical-PCB for high-speed interconnect application

Science.gov (United States)

Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar

2018-02-01

Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor.

Science.gov (United States)

Lee, Jieun; Jang, Jaeman; Choi, Bongsik; Yoon, Jinsu; Kim, Jee-Yeon; Choi, Yang-Kyu; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin

2015-07-21

This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5 × 10(5) times larger than that of a single SiNW sensor. In addition, we demonstrate charged polymer detection using the biosensor, with a high current change of 4.5 × 10(5) with a 500 nM concentration of poly(allylamine hydrochloride). In addition, we demonstrate a wide dynamic range can be obtained by adjusting the liquid gate voltage. We expect that this biosensor will be advantageous and practical for biosensor applications which requires lower noise, high speed, and high density.

Bi-directional electrons in the near-Earth plasma sheet

Directory of Open Access Journals (Sweden)

K. Shiokawa

2003-07-01

Full Text Available We have studied the occurrence characteristics of bi-directional electron pitch angle anisotropy (enhanced flux in field-aligned directions, F^ /F|| > 1.5 at energies of 0.1–30 keV using plasma and magnetic field data from the AMPTE/IRM satellite in the near-Earth plasma sheet. The occurrence rate increases in the tailward direction from XGSM = - 9 RE to - 19 RE . The occurrence rate is also enhanced in the midnight sector, and furthermore, whenever the elevation angle of the magnetic field is large while the magnetic field intensity is small, B ~ 15 nT. From these facts, we conclude that the bi-directional electrons in the central plasma sheet are produced mainly in the vicinity of the neutral sheet and that the contribution from ionospheric electrons is minor. A high occurrence is also found after earthward high-speed ion flows, suggesting Fermi-type field-aligned electron acceleration in the neutral sheet. Occurrence characteristics of bi-directional electrons in the plasma sheet boundary layer are also discussed.Key words. Magnetospheric physics (magnetospheric configuration and dynamics; magnetotail; plasma sheet

High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

Science.gov (United States)

Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

2012-05-07

This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Investigation of polymer derived ceramics cantilevers for application of high speed atomic force microscopy

Science.gov (United States)

Wu, Chia-Yun

High speed Atomic Force Microscopy (AFM) has a wide variety of applications ranging from nanomanufacturing to biophysics. In order to have higher scanning speed of certain AFM modes, high resonant frequency cantilevers are needed; therefore, the goal of this research is to investigate using polymer derived ceramics for possible applications in making high resonant frequency AFM cantilevers using complex cross sections. The polymer derived ceramic that will be studied, is silicon carbide. Polymer derived ceramics offer a potentially more economic fabrication approach for MEMS due to their relatively low processing temperatures and ease of complex shape design. Photolithography was used to make the desired cantilever shapes with micron scale size followed by a wet etching process to release the cantilevers from the substrates. The whole manufacturing process we use borrow well-developed techniques from the semiconducting industry, and as such this project also could offer the opportunity to reduce the fabrication cost of AFM cantilevers and MEMS in general. The characteristics of silicon carbide made from the precursor polymer, SMP-10 (Starfire Systems), were studied. In order to produce high qualities of silicon carbide cantilevers, where the major concern is defects, proper process parameters needed to be determined. Films of polymer derived ceramics often have defects due to shrinkage during the conversion process. Thus control of defects was a central issue in this study. A second, related concern was preventing oxidation; the polymer derived ceramics we chose is easily oxidized during processing. Establishing an environment without oxygen in the whole process was a significant challenge in the project. The optimization of the parameters for using photolithography and wet etching process was the final and central goal of the project; well established techniques used in microfabrication were modified for use in making the cantilever in the project. The techniques

All-Optical Wavelength Conversion of a High-Speed RZ-OOK Signal in a Silicon Nanowire

DEFF Research Database (Denmark)

Hu, Hao; Ji, Hua; Galili, Michael

2011-01-01

All-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits.......All-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits....

Utility of Vaccum Pressed Silicon Sheet as a Bite Raising Appliance in the Management of TMJ Dysfunction Syndrome.

Science.gov (United States)

Datarkar, Abhay; Daware, Surendra; Dande, Ravi

2017-09-01

Temporomandibular disorders (TMDs) represent a group of painful conditions involving the muscles of mastication and the temporomandibular joint (TMJ) that frequently encountered in general clinical practice. This study is designed to assess the utility of vacuum pressed silicon sheet as a bite raising appliance in the management of TMJ dysfunction syndrome. The patients for this study were selected from those with the chief complaint of TMJ disorder. Out of 200 patients, 104 patients were diagnosed with subluxation and 96 patients were diagnosed with internal derangement of temporomandibular joint. All the reported cases were managed conservatively with physiotherapy and muscle relaxant therapy for one week period and followed with silicon bite raising appliance over both the arches in the subsequent period. All the patients had pain relief within six months duration as graded over verbal analog scale. ANOVA scale was used for comparision of VAS scores. The use of vacuum pressed bite raising appliance in the management of TMJ disorder was found to be satisfactorily effective in alleviation of pain symptom in our study group.

Experiments on sheet metal shearing

OpenAIRE

Gustafsson, Emil

2013-01-01

Within the sheet metal industry, different shear cutting technologies are commonly used in several processing steps, e.g. in cut to length lines, slitting lines, end cropping etc. Shearing has speed and cost advantages over competing cutting methods like laser and plasma cutting, but involves large forces on the equipment and large strains in the sheet material.Numerical models to predict forces and sheared edge geometry for different sheet metal grades and different shear parameter set-ups a...

Three-Sheet Spot Welding of Advanced High-Strength Steels

DEFF Research Database (Denmark)

Nielsen, Chris Valentin; Friis, Kasper Storgaard; Zhang, W.

2011-01-01

The automotive industry has introduced the three-layer weld configuration, which represents new challenges compared to normal two-sheet lap welds. The process is further complicated by introducing high-strength steels in the joint. The present article investigates the weldability of thin, low....... The weld mechanisms are analyzed numerically and compared with metallographic analyses showing how the primary bonding mechanism between the thin, low-carbon steel sheet and the thicker sheet of high-strength steel is solid-state bonding, whereas the two high-strength steels are joined by melting, forming...... a weld nugget at their mutual interface. Despite the absence of the typical fusion nugget through the interface between the low-carbon steel and high-strength steel, the weld strengths obtained are acceptable. The failure mechanism in destructive testing is ductile fracture with plug failure....

Holistic design in high-speed optical interconnects

Science.gov (United States)

Saeedi, Saman

Integrated circuit scaling has enabled a huge growth in processing capability, which necessitates a corresponding increase in inter-chip communication bandwidth. As bandwidth requirements for chip-to-chip interconnection scale, deficiencies of electrical channels become more apparent. Optical links present a viable alternative due to their low frequency-dependent loss and higher bandwidth density in the form of wavelength division multiplexing. As integrated photonics and bonding technologies are maturing, commercialization of hybrid-integrated optical links are becoming a reality. Increasing silicon integration leads to better performance in optical links but necessitates a corresponding co-design strategy in both electronics and photonics. In this light, holistic design of high-speed optical links with an in-depth understanding of photonics and state-of-the-art electronics brings their performance to unprecedented levels. This thesis presents developments in high-speed optical links by co-designing and co-integrating the primary elements of an optical link: receiver, transmitter, and clocking. In the first part of this thesis a 3D-integrated CMOS/Silicon-photonic receiver will be presented. The electronic chip features a novel design that employs a low-bandwidth TIA front-end, double-sampling and equalization through dynamic offset modulation. Measured results show -14.9dBm of sensitivity and energy eciency of 170fJ/b at 25Gb/s. The same receiver front-end is also used to implement source-synchronous 4-channel WDM-based parallel optical receiver. Quadrature ILO-based clocking is employed for synchronization and a novel frequency-tracking method that exploits the dynamics of IL in a quadrature ring oscillator to increase the effective locking range. An adaptive body-biasing circuit is designed to maintain the per-bit-energy consumption constant across wide data-rates. The prototype measurements indicate a record-low power consumption of 153fJ/b at 32Gb/s. The

Bessel light sheet structured illumination microscopy

Science.gov (United States)

Noshirvani Allahabadi, Golchehr

Biomedical study researchers using animals to model disease and treatment need fast, deep, noninvasive, and inexpensive multi-channel imaging methods. Traditional fluorescence microscopy meets those criteria to an extent. Specifically, two-photon and confocal microscopy, the two most commonly used methods, are limited in penetration depth, cost, resolution, and field of view. In addition, two-photon microscopy has limited ability in multi-channel imaging. Light sheet microscopy, a fast developing 3D fluorescence imaging method, offers attractive advantages over traditional two-photon and confocal microscopy. Light sheet microscopy is much more applicable for in vivo 3D time-lapsed imaging, owing to its selective illumination of tissue layer, superior speed, low light exposure, high penetration depth, and low levels of photobleaching. However, standard light sheet microscopy using Gaussian beam excitation has two main disadvantages: 1) the field of view (FOV) of light sheet microscopy is limited by the depth of focus of the Gaussian beam. 2) Light-sheet images can be degraded by scattering, which limits the penetration of the excitation beam and blurs emission images in deep tissue layers. While two-sided sheet illumination, which doubles the field of view by illuminating the sample from opposite sides, offers a potential solution, the technique adds complexity and cost to the imaging system. We investigate a new technique to address these limitations: Bessel light sheet microscopy in combination with incoherent nonlinear Structured Illumination Microscopy (SIM). Results demonstrate that, at visible wavelengths, Bessel excitation penetrates up to 250 microns deep in the scattering media with single-side illumination. Bessel light sheet microscope achieves confocal level resolution at a lateral resolution of 0.3 micron and an axial resolution of 1 micron. Incoherent nonlinear SIM further reduces the diffused background in Bessel light sheet images, resulting in

High-speed AC motors

Energy Technology Data Exchange (ETDEWEB)

Jokinen, T.; Arkkio, A. [Helsinki University of Technology Laboratory of Electromechanics, Otaniemi (Finland)

1997-12-31

The paper deals with various types of highspeed electric motors, and their limiting powers. Standard machines with laminated rotors can be utilised if the speed is moderate. The solid rotor construction makes it possible to reach higher power and speed levels than those of laminated rotors. The development work on high-speed motors done at Helsinki University of Technology is presented, too. (orig.) 12 refs.

Self-Healing, High-Permittivity Silicone Dielectric Elastomer

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

2016-01-01

possesses high dielectric permittivity and consists of an interpenetrating polymer network of silicone elastomer and ionic silicone species that are cross-linked through proton exchange between amines and acids. The ionically cross-linked silicone provides self-healing properties after electrical breakdown...... or cuts made directly to the material due to the reassembly of the ionic bonds that are broken during damage. The dielectric elastomers presented in this paper pave the way to increased lifetimes and the ability of dielectric elastomers to survive millions of cycles in high-voltage conditions....

High-gain bipolar detector on float-zone silicon

Science.gov (United States)

Han, D. J.; Batignani, G.; Del Guerra, A.; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Giorgi, M.; Forti, F.

2003-10-01

Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be ˜7.77×10 4/s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83 μm has been observed for the same device.

High-gain bipolar detector on float-zone silicon

International Nuclear Information System (INIS)

Han, D.J.; Batignani, G.; Guerra, A.D.A. Del; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Giorgi, M.; Forti, F.

2003-01-01

Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be ∼7.77x10 4 /s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83 μm has been observed for the same device

Geometry of thin liquid sheet flows

Science.gov (United States)

Chubb, Donald L.; Calfo, Frederick D.; Mcconley, Marc W.; Mcmaster, Matthew S.; Afjeh, Abdollah A.

1994-01-01

Incompresible, thin sheet flows have been of research interest for many years. Those studies were mainly concerned with the stability of the flow in a surrounding gas. Squire was the first to carry out a linear, invicid stability analysis of sheet flow in air and compare the results with experiment. Dombrowski and Fraser did an experimental study of the disintegration of sheet flows using several viscous liquids. They also detected the formulation of holes in their sheet flows. Hagerty and Shea carried out an inviscid stability analysis and calculated growth rates with experimental values. They compared their calculated growth rates with experimental values. Taylor studied extensively the stability of thin liquid sheets both theoretically and experimentally. He showed that thin sheets in a vacuum are stable. Brown experimentally investigated thin liquid sheet flows as a method of application of thin films. Clark and Dumbrowski carried out second-order stability analysis for invicid sheet flows. Lin introduced viscosity into the linear stability analysis of thin sheet flows in a vacuum. Mansour and Chigier conducted an experimental study of the breakup of a sheet flow surrounded by high-speed air. Lin et al. did a linear stability analysis that included viscosity and a surrounding gas. Rangel and Sirignano carried out both a linear and nonlinear invisid stability analysis that applies for any density ratio between the sheet liquid and the surrounding gas. Now there is renewed interest in sheet flows because of their possible application as low mass radiating surfaces. The objective of this study is to investigate the fluid dynamics of sheet flows that are of interest for a space radiator system. Analytical expressions that govern the sheet geometry are compared with experimental results. Since a space radiator will operate in a vacuum, the analysis does not include any drag force on the sheet flow.

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

International Nuclear Information System (INIS)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

2014-01-01

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

2014-11-10

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

Towards neuromorphic electronics: Memristors on foldable silicon fabric

KAUST Repository

Ghoneim, Mohamed T.

2014-11-01

The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex\\'s folded pattern for ultra-compact design.

Low cost silicon-on-ceramic photovoltaic solar cells

Science.gov (United States)

Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

1980-01-01

A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

On the balance of stresses in the plasma sheet.

Science.gov (United States)

Rich, F. J.; Wolf, R. A.; Vasyliunas, V. M.

1972-01-01

The stress resulting from magnetic tension on the neutral sheet must, in a steady state, be balanced by any one or a combination of (1) a pressure gradient in the direction along the axis of the tail, (2) a similar gradient of plasma flow kinetic energy, and (3) the tension resulting from a pressure anisotropy within the plasma sheet. Stress balance in the first two cases requires that the ratios h/LX and BZ/BX be of the same order of magnitude, where h is the half-thickness of the neutral sheet, LX is the length scale for variations along the axis of the tail, and BZ and BX are the magnetic field components in the plasma sheet just outside the neutral sheet. The second case requires, in addition, that the plasma flow speed within the neutral sheet be of the order of or larger than the Alfven speed outside the neutral sheet. Stress balance in the third case requires that just outside the neutral sheet the plasma pressure obey the marginal firehose stability condition.

Temporomandibular joint arthroplasty for osteoarthrosis: A series of 24 patients that received a uni- or bilateral inter-positional silicone sheet.

Science.gov (United States)

Boutault, F; Cavallier, Z; Lauwers, F; Prevost, A

2018-06-01

To evaluate mid-term results from using a silicone sheet for inter-positional arthroplasty in moderate or severe cases of osteoarthrosis of the temporo-mandibular joint (TMJ). To also determine any remaining indications from this method. This retrospective study included patients that underwent surgery between 2008 and 2016. Pre- and post-operative mouth opening (MO), according to inter-incisal distance (mm) and pain score (PS: 0=no pain to 4=very severe pain) were recorded for 24 patients. Patients were divided according to thickness of the silicone sheet (group A: 1.0 mm, group B: 1.5 mm). The cohort included 22 females (92%). Mean age at surgery was 55 years±13 (26-80). Mean length of follow-up was 26 months±24 (6-80). Mean improvement in MO was 8.2 mm (+33%) and of PS was 1.7 (-68%). MO was not improved for two patients and worsened for one. PS score improved for all patients. No statistical difference was found between groups A and B. There was also a tendency for degradation of outcomes over time. The poor reputation of prosthetic discoplasty was not as evident in our series, even though anatomical and functional status seemed to deteriorate over time. This is because total-joint prosthetic replacement is often proposed instead. However, for elderly or fragile patients that have severe pain, and regarding cost-benefit aspects, conventional arthroplasty can still be discussed, especially since French national health-care insurance does not yet support TMJ prosthetic replacement for osteoarthrosis. Copyright © 2018 Elsevier Masson SAS. All rights reserved.

Optical Flow-Field Techniques Used for Measurements in High-Speed Centrifugal Compressors

Science.gov (United States)

Skoch, Gary J.

1999-01-01

The overall performance of a centrifugal compressor depends on the performance of the impeller and diffuser as well as on the interactions occurring between these components. Accurate measurements of the flow fields in each component are needed to develop computational models that can be used in compressor design codes. These measurements must be made simultaneously over an area that covers both components so that researchers can understand the interactions occurring between the two components. Optical measurement techniques are being used at the NASA Lewis Research Center to measure the velocity fields present in both the impeller and diffuser of a 4:1 pressure ratio centrifugal compressor operating at several conditions ranging from design flow to surge. Laser Doppler Velocimetry (LDV) was used to measure the intrablade flows present in the impeller, and the results were compared with analyses obtained from two three-dimensional viscous codes. The development of a region of low throughflow velocity fluid within this high-speed impeller was examined and compared with a similar region first observed in a large low-speed centrifugal impeller at Lewis. Particle Image Velocimetry (PIV) is a relatively new technique that has been applied to measuring the diffuser flow fields. PIV can collect data rapidly in the diffuser while avoiding the light-reflection problems that are often encountered when LDV is used. The Particle Image Velocimeter employs a sheet of pulsed laser light that is introduced into the diffuser in a quasi-radial direction through an optical probe inserted near the diffuser discharge. The light sheet is positioned such that its centerline is parallel to the hub and shroud surfaces and such that it is parallel to the diffuser vane, thereby avoiding reflections from the solid surfaces. Seed particles small enough to follow the diffuser flow are introduced into the compressor at an upstream location. A high-speed charge-coupled discharge (CCD) camera is

High-speed, low-damage grinding of advanced ceramics Phase 1. Final report

Energy Technology Data Exchange (ETDEWEB)

Kovach, J.A. [Eaton Corp., Willoughby Hills, OH (United States). Mfg. Technologies Center; Malkin, S. [Univ. of Massachusetts (United States)

1995-03-01

In manufacture of structural ceramic components, grinding costs can comprise up to 80% of the entire manufacturing cost. Most of these costs arise from the conventional multi-step grinding process with numerous grinding wheels and additional capital equipment, perishable dressing tools, and labor. In an attempt to reduce structural ceramic grinding costs, a feasibility investigation was undertaken to develop a single step, roughing-finishing process suitable for producing high-quality silicon nitride ceramic parts at high material removal rates at lower cost than traditional, multi-stage grinding. This feasibility study employed combined use of laboratory grinding tests, mathematical grinding models, and characterization of resultant material surface condition. More specifically, this Phase 1 final report provides a technical overview of High-Speed, Low-Damage (HSLD) ceramic grinding and the conditions necessary to achieve the small grain depths of cut necessary for low damage grinding while operating at relatively high material removal rates. Particular issues addressed include determining effects of wheel speed and material removal rate on resulting mode of material removal (ductile or brittle fracture), limiting grinding forces, calculation of approximate grinding zone temperatures developed during HSLD grinding, and developing the experimental systems necessary for determining HSLD grinding energy partition relationships. In addition, practical considerations for production utilization of the HSLD process are also discussed.

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Science.gov (United States)

Boomer, Kristen; Hammoud, Ahmad

2015-01-01

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Digitally controlled analog proportional-integral-derivative (PID) controller for high-speed scanning probe microscopy

Science.gov (United States)

Dukic, Maja; Todorov, Vencislav; Andany, Santiago; Nievergelt, Adrian P.; Yang, Chen; Hosseini, Nahid; Fantner, Georg E.

2017-12-01

Nearly all scanning probe microscopes (SPMs) contain a feedback controller, which is used to move the scanner in the direction of the z-axis in order to maintain a constant setpoint based on the tip-sample interaction. The most frequently used feedback controller in SPMs is the proportional-integral (PI) controller. The bandwidth of the PI controller presents one of the speed limiting factors in high-speed SPMs, where higher bandwidths enable faster scanning speeds and higher imaging resolution. Most SPM systems use digital signal processor-based PI feedback controllers, which require analog-to-digital and digital-to-analog converters. These converters introduce additional feedback delays which limit the achievable imaging speed and resolution. In this paper, we present a digitally controlled analog proportional-integral-derivative (PID) controller. The controller implementation allows tunability of the PID gains over a large amplification and frequency range, while also providing precise control of the system and reproducibility of the gain parameters. By using the analog PID controller, we were able to perform successful atomic force microscopy imaging of a standard silicon calibration grating at line rates up to several kHz.

Monolithic amorphous silicon modules on continuous polymer substrate

Energy Technology Data Exchange (ETDEWEB)

Grimmer, D.P. (Iowa Thin Film Technologies, Inc., Ames, IA (United States))

1992-03-01

This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

Improvement of formability of high strength steel sheets in shrink flanging

International Nuclear Information System (INIS)

Hamedon, Z; Abe, Y; Mori, K

2016-01-01

In the shrinkage flanging, the wrinkling tends to occur due to compressive stress. The wrinkling will cause a difficulty in assembling parts, and severe wrinkling may leads to rupture of parts. The shrinkage flange of the ultra-high strength steel sheets not only defects the product by the occurrence of the wrinkling but also causes seizure and wear of the dies and shortens the life of dies. In the present study, a shape of a punch having gradual contact was optimized in order to prevent the wrinkling in shrinkage flanging of ultra-high strength steel sheets. The sheet was gradually bent from the corner of the sheet to reduce the compressive stress. The wrinkling in the shrink flanging of the ultra-high strength steel sheets was prevented by the punch having gradual contact. It was found that the punch having gradual contact is effective in preventing the occurrence of wrinkling in the shrinkage flanging. (paper)

High speed heterostructure devices

CERN Document Server

Beer, Albert C; Willardson, R K; Kiehl, Richard A; Sollner, T C L Gerhard

1994-01-01

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices.

Neuromorphic Silicon Neuron Circuits

Science.gov (United States)

Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

2011-01-01

Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

Neuromorphic silicon neuron circuits

Directory of Open Access Journals (Sweden)

Giacomo eIndiveri

2011-05-01

Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

Effects of the Formulations of Silicon-Based Composite Anodes on their Mechanical, Storage, and Electrochemical Properties.

Science.gov (United States)

Assresahegn, Birhanu Desalegn; Bélanger, Daniel

2017-10-23

In this work, the effects of the formulation of silicon-based composite anodes on their mechanical, storage, and electrochemical properties were investigated. The electrode formulation was changed through the use of hydrogenated or modified (through the covalent attachment of a binding additive such as polyacrylic acid) silicon and acetylene black or graphene sheets as conducting additives. A composite anode with a covalently grafted binder had the highest elongation without breakages and strong adhesion to the current collector. These mechanical properties depend significantly on the conductive carbon additive used and the use of graphene sheets instead of acetylene black can improve elongation and adhesion significantly. After 180 days of storage under ambient conditions, the electronic conductivity and discharge capacity of the modified silicon electrode showed much smaller decreases in these properties than those of the hydrogenated silicon composite electrode, indicating that the modification can result in passivation and a constant composition of the active material. Moreover, the composite Si anode has a high packing density. Consequently, thin-film electrodes with very high material loadings can be prepared without decreased electrochemical performance. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Speed Rolling of AZ31 Magnesium Alloy Having Different Initial Textures

Science.gov (United States)

Onuki, Yusuke; Hara, Kenichiro; Utsunomiya, Hiroshi; Szpunar, Jerzy A.

2015-02-01

It is known that magnesium alloys can be rolled up to a large thickness reduction and develop a unique texture when the rolling speed is high (>1000 m/min). In order to understand the texture formation mechanism during high-strain-rate deformation, high-speed rolling of AZ31 magnesium alloy samples having different initial textures was conducted. The main components of the textures after the rolling were the RD-split basal, which consisted of 10°-20° inclining basal poles from the normal direction toward the rolling direction of the sheet, regardless of the different initial textures. With preheating at 473 K, all the samples were rolled without cracking while all were cracked when preheating was not applied. The optical micrographs and EBSD measurements showed a significant amount of twins and the cracks that developed along the shear bands consisted with laminated twins. Based on the texture simulation using the visco-plastic self-consistent model, it is concluded that the rapid development of the RD-split basal component from the initial basal alignment along the transverse direction was attributable to the tension twinning, The effect of the initial texture on the crack formation can be explained by the activation of the twinning system.

Innovative technologies for emitter formation of crystalline silicon solar cells using in-line diffusion; Innovative Technologien zur Emittererzeugung fuer kristalline Silizium-Solarzellen mittels Durchlaufdiffusion

Energy Technology Data Exchange (ETDEWEB)

Voyer, Catherine

2009-04-20

, and thus the PSG thickness and the emitter essentially follow the surface texture, as seen on SEM pictures. Through dehydration of the phosphorus molecules and reaction with silicon, the layer turns into a PSG. This process produces a vapour which contains water and phosphorus compounds. A steeper heat-up curve or a higher vapour pressure leads to a thicker PSG. In this work, a high PSG thickness homogeneity was obtained through adjustment of the air supply in the furnace entrance area. It was furthermore shown that under the condition of a steep heat-up curve, the PSG formation is only completed at temperatures above 700 C. The influence of the furnace transport speed and plateau temperature and of the spray nozzle flow rate on the emitter doping profile was examined. A lower speed or a higher temperature resulted in a lower sheet resistance. Moreover, the emitter phosphorus surface concentration was increased or reduced through, respectively, an increase or a reduction of the spray nozzle flow rate. The dependence of sheet resistance on PSG thickness was found to show a non-monotonous behaviour: Sheet resistance first decreased with increasing PSG thickness, reached a minimum and then increased. The reduction is explained by the increasing amount of phosphorus available for diffusion into silicon. The increase is assumed to be due to the longer time and greater energy requirement for PSG formation from a thicker dopant source layer, which leads to a weaker phosphorus diffusion into silicon in the first zones of the furnace. A high homogeneity of sheet resistance was obtained, for example a relative standard deviation of 2.5% on a textured surface. Standard screen-printed Cz-Si solar cells were made which had high values of open-circuit voltage of up to 626 mV, of short-circuit current of up to 36 mA/cm{sup 2} and of efficiency of up to 17.5%. In addition, the doping profile was varied. Textured solar cells with in-line diffusion achieved an efficiency of up to 16

Imaging a seizure model in zebrafish with structured illumination light sheet microscopy

Science.gov (United States)

Liu, Yang; Dale, Savannah; Ball, Rebecca; VanLeuven, Ariel J.; Baraban, Scott; Sornborger, Andrew; Lauderdale, James D.; Kner, Peter

2018-02-01

Zebrafish are a promising vertebrate model for elucidating how neural circuits generate behavior under normal and pathological conditions. The Baraban group first demonstrated that zebrafish larvae are valuable for investigating seizure events and can be used as a model for epilepsy in humans. Because of their small size and transparency, zebrafish embryos are ideal for imaging seizure activity using calcium indicators. Light-sheet microscopy is well suited to capturing neural activity in zebrafish because it is capable of optical sectioning, high frame rates, and low excitation intensities. We describe work in our lab to use light-sheet microscopy for high-speed long-time imaging of neural activity in wildtype and mutant zebrafish to better understand the connectivity and activity of inhibitory neural networks when GABAergic signaling is altered in vivo. We show that, with light-sheet microscopy, neural activity can be recorded at 23 frames per second in twocolors for over 10 minutes allowing us to capture rare seizure events in mutants. We have further implemented structured illumination to increase resolution and contrast in the vertical and axial directions during high-speed imaging at an effective frame rate of over 7 frames per second.

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

Science.gov (United States)

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimization of oxidation processes to improve crystalline silicon solar cell emitters

Directory of Open Access Journals (Sweden)

L. Shen

2014-02-01

Full Text Available Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance.

Carbon nanotube-coated silicone as a flexible and electrically conductive biomedical material

International Nuclear Information System (INIS)

Matsuoka, Makoto; Akasaka, Tsukasa; Totsuka, Yasunori; Watari, Fumio

2012-01-01

Artificial cell scaffolds that support cell adhesion, growth, and organization need to be fabricated for various purposes. Recently, there have been increasing reports of cell patterning using electrical fields. We fabricated scaffolds consisting of silicone sheets coated with single-walled (SW) or multi-walled (MW) carbon nanotubes (CNTs) and evaluated their electrical properties and biocompatibility. We also performed cell alignment with dielectrophoresis using CNT-coated sheets as electrodes. Silicone coated with 10 μg/cm 2 SWCNTs exhibited the least sheet resistance (0.8 kΩ/sq); its conductivity was maintained even after 100 stretching cycles. CNT coating also improved cell adhesion and proliferation. When an electric field was applied to the cell suspension introduced on the CNT-coated scaffold, the cells became aligned in a pearl-chain pattern. These results indicate that CNT coating not only provides electro-conductivity but also promotes cell adhesion to the silicone scaffold; cells seeded on the scaffold can be organized using electricity. These findings demonstrate that CNT-coated silicone can be useful as a biocompatible scaffold. - Highlights: ► We fabricated a CNT-coated silicone which has conductivity and biocompatibility. ► The conductivity was maintained after 100 cycles of stretching. ► CNT coatings enabled C2C12 cells adhere to the silicone surface. ► Cells were aligned with dielectrophoresis between CNT-coated silicone surfaces.

Microwave conductance properties of aligned multiwall carbon nanotube textile sheets

Energy Technology Data Exchange (ETDEWEB)

Brown, Brian L. [Univ. of Texas, Dallas, TX (United States); Martinez, Patricia [Univ. of Texas, Dallas, TX (United States); Zakhidov, Anvar A. [Univ. of Texas, Dallas, TX (United States); Shaner, Eric A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lee, Mark [Univ. of Texas, Dallas, TX (United States)

2015-07-06

Understanding the conductance properties of multi-walled carbon nanotube (MWNT) textile sheets in the microwave regime is essential for their potential use in high-speed and high-frequency applications. To expand current knowledge, complex high-frequency conductance measurements from 0.01 to 50 GHz and across temperatures from 4.2 K to 300 K and magnetic fields up to 2 T were made on textile sheets of highly aligned MWNTs with strand alignment oriented both parallel and perpendicular to the microwave electric field polarization. Sheets were drawn from 329 and 520 μm high MWNT forests that resulted in different DC resistance anisotropy. For all samples, the microwave conductance can be modeled approximately by a shunt capacitance in parallel with a frequency-independent conductance, but with no inductive contribution. Finally, this is consistent with diffusive Drude conduction as the primary transport mechanism up to 50 GHz. Further, it is found that the microwave conductance is essentially independent of both temperature and magnetic field.

High performance supercapacitors based on highly conductive nitrogen-doped graphene sheets.

Science.gov (United States)

Qiu, Yongcai; Zhang, Xinfeng; Yang, Shihe

2011-07-21

Thermal nitridation of reduced graphene oxide sheets yields highly conductive (∼1000-3000 S m(-1)) N-doped graphene sheets, as a result of the restoration of the graphene network by the formation of C-N bonded groups and N-doping. Even without carbon additives, supercapacitors made of the N-doped graphene electrodes can deliver remarkable energy and power when operated at higher voltages, in the range of 0-4 V. This journal is © the Owner Societies 2011

SiNTO EWT silicon solar cells

OpenAIRE

Fallisch, A.; Keding, R.; Kästner, G.; Bartsch, J.; Werner, S.; Stüwe, D.; Specht, J.; Preu, R.; Biro, D.

2010-01-01

In this work we combine the SiNTO cell process with the EWT cell concept. All masking steps are performed by inkjet printing technology. The via-holes and laser-fired contacts are created by high-speed laser drilling. A new polishing process, which is suitable for inkjet masking, to pattern the interdigitated grid on the rear side is developed. For passivation purposes a thermal silicon oxide is used for the rear surface and a silicon nitride antireflection coating for the front surface. An e...

High-speed 2 × 2 silicon-based electro-optic switch with nanosecond switch time

International Nuclear Information System (INIS)

Xue-Jun, Xu; Shao-Wu, Chen; Hai-Hua, Xu; Yang, Sun; Yu-De, Yu; Jin-Zhong, Yu; Qi-Ming, Wang

2009-01-01

A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach–Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm×340 nm. The measurement results show that the switch has a V π L π figure of merit of 0.145 V·cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and −28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated

Low cost light-sheet microscopy for whole brain imaging

Science.gov (United States)

Kumar, Manish; Nasenbeny, Jordan; Kozorovitskiy, Yevgenia

2018-02-01

Light-sheet microscopy has evolved as an indispensable tool in imaging biological samples. It can image 3D samples at fast speed, with high-resolution optical sectioning, and with reduced photobleaching effects. These properties make light-sheet microscopy ideal for imaging fluorophores in a variety of biological samples and organisms, e.g. zebrafish, drosophila, cleared mouse brains, etc. While most commercial turnkey light-sheet systems are expensive, the existing lower cost implementations, e.g. OpenSPIM, are focused on achieving high-resolution imaging of small samples or organisms like zebrafish. In this work, we substantially reduce the cost of light-sheet microscope system while targeting to image much larger samples, i.e. cleared mouse brains, at single-cell resolution. The expensive components of a lightsheet system - excitation laser, water-immersion objectives, and translation stage - are replaced with an incoherent laser diode, dry objectives, and a custom-built Arduino-controlled translation stage. A low-cost CUBIC protocol is used to clear fixed mouse brain samples. The open-source platforms of μManager and Fiji support image acquisition, processing, and visualization. Our system can easily be extended to multi-color light-sheet microscopy.

Light-Weight Free-Standing Carbon Nanotube-Silicon Films for Anodes of Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng; Hu, Liangbing; Choi, Jang Wook; Cui, Yi

2010-01-01

and Si as a high capacity anode material for Li-ion battery. Such free-standing film has a low sheet resistance of ∼30 Ohm/sq. It shows a high specific charge storage capacity (∼2000 mAh/g) and a good cycling life, superior to pure sputtered-on silicon

14 CFR 23.253 - High speed characteristics.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false High speed characteristics. 23.253 Section... Requirements § 23.253 High speed characteristics. If a maximum operating speed VMO/MMO is established under § 23.1505(c), the following speed increase and recovery characteristics must be met: (a) Operating...

Thin film silicon photovoltaics: Architectural perspectives and technological issues

Energy Technology Data Exchange (ETDEWEB)

Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

2009-10-15

Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

Science.gov (United States)

Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

2015-11-11

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

Effect of welding parameters (plunge depths of shoulder, pin geometry, and tool rotational speed) on the failure mode and stir zone characteristics of friction stir spot welded aluminum 2024-T3 sheets

Energy Technology Data Exchange (ETDEWEB)

Paidar, Moslem; Sarab, Mahsa Lali; Taheri, Morteza; Khodabandeh, Alireza [Islamic Azad University, Tehran (Iran, Islamic Republic of)

2015-11-15

The main purpose of this study was to investigate the effect of welding parameters on the failure mode and stir zone characteristics of aluminum alloy 2024-T3 joined by friction stir spot welding. The welding parameters in this work are tool rotational speed, plunge depths of shoulder, and pin geometry. In accordance with the methods of previous investigations, the rotational speeds were set to 630 rpm to 2000 rpm. Two pin geometries with concave shoulder were used: triangular and cylindrical. The plunge depths of the shoulder were 0.3, 0.5 and 0.7 mm. The shoulder diameter and pin height for both geometries were 14 and 2.4 mm, respectively. The diameter of the cylindrical and triangular pins was 5 mm. Results show that the parameters mentioned earlier influence fracture mode under tension shear loading. Two different fracture modes were observed during the examinations. Low-penetration depths and low-rotational speeds lead to shear fracture, whereas high values of these factors cause the tension-shear fracture mode. Fracture of the lower sheet sometimes occurs at high rotational speeds.

High-Speed Photography

International Nuclear Information System (INIS)

Paisley, D.L.; Schelev, M.Y.

1998-01-01

The applications of high-speed photography to a diverse set of subjects including inertial confinement fusion, laser surgical procedures, communications, automotive airbags, lightning etc. are briefly discussed. (AIP) copyright 1998 Society of Photo-Optical Instrumentation Engineers

Development in high speed and high quality laser cutting process in fiber reinforced plastics; FRP no laser ni yoru kosoku, kohinshitsu setsudan gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

Ishide, T.; Shirota, H.; Matsumoto, O. [Mitsubishi Heavy Industries, Ltd., Tokyo (Japan)

1996-06-01

Trimming was performed and studied by cutting KFRP, an epoxy matrix with Kevlar fiber woven thereinto, using various laser beams. The CO2 laser is capable of high-speed cutting but the product is low in quality. The surface of a cut by the YAG laser is not high in quality even with its peak output elevated. The thermally affected area is smaller under the excimer laser but it is low in cutting speed. The ablation properties of the excimer laser were investigated and the beam was shaped into a linear beam for another experiment, but it failed to attain the target speed of cutting. Next, a combination of excimer laser and CO2 laser was used for cutting. It was so designed that the preceding CO2 laser cuts the KFRP at a high speed to leave behind a carbonized layer, which is followed by a linear beam which vaporizes the carbonized layer for removal. An optical system is adopted for reshaping the excimer oscillated beam into a tube-like beam. Optical conditions were determined for a fluence value required for the removal of the carbonized layer. When the CO2 laser was set at 160W and the excimer laser at 20W, a 1mm-thick sheet was successfully cut at a speed of 16.7mm/sec. 3 refs., 7 figs.

Efficient tunable luminescence of SiGe alloy sheet polymers

International Nuclear Information System (INIS)

Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

2001-01-01

Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

Nitrogen concentration profiles in oxy-nitrited high-speed steel

International Nuclear Information System (INIS)

Barcz, A.; Turos, A.; Wielunski, L.

1976-01-01

Nuclear microanalysis has been applied for the determination of in-depth concentration profiles of nitrogen in oxy-nitrided high-speed steel. The concentration profiles were deduced from measurements of the nitrogen content, determined by means of the 14 N(d,α) 12 C reaction for the set of initially identical samples after the removal of surface layers of sequentially increasing thicknesses. The 1.2 MeV deuterons were obtained from the Institute of Nuclear Research Van de Graaf accelerator LECH. The α-particles produced in the 14 N(d,α) 12 C reaction were detected by means of silicon surface barrier detector mounted at 150 deg C. Strong blocking of the nitrogen diffusion due to the presence of oxygen has been observed. The accuracy of nitrogen detection is of the order of 5% for nitrogen-rich regions and 10% for the matrix. However, the local non-uniformity of the steel may cause a spread of about 20% of the measured values. (T.G.)

SEAL FOR HIGH SPEED CENTRIFUGE

Science.gov (United States)

Skarstrom, C.W.

1957-12-17

A seal is described for a high speed centrifuge wherein the centrifugal force of rotation acts on the gasket to form a tight seal. The cylindrical rotating bowl of the centrifuge contains a closure member resting on a shoulder in the bowl wall having a lower surface containing bands of gasket material, parallel and adjacent to the cylinder wall. As the centrifuge speed increases, centrifugal force acts on the bands of gasket material forcing them in to a sealing contact against the cylinder wall. This arrangememt forms a simple and effective seal for high speed centrifuges, replacing more costly methods such as welding a closure in place.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

High-Speed Data Recorder for Space, Geodesy, and Other High-Speed Recording Applications

Science.gov (United States)

Taveniku, Mikael

2013-01-01

A high-speed data recorder and replay equipment has been developed for reliable high-data-rate recording to disk media. It solves problems with slow or faulty disks, multiple disk insertions, high-altitude operation, reliable performance using COTS hardware, and long-term maintenance and upgrade path challenges. The current generation data recor - ders used within the VLBI community are aging, special-purpose machines that are both slow (do not meet today's requirements) and are very expensive to maintain and operate. Furthermore, they are not easily upgraded to take advantage of commercial technology development, and are not scalable to multiple 10s of Gbit/s data rates required by new applications. The innovation provides a softwaredefined, high-speed data recorder that is scalable with technology advances in the commercial space. It maximally utilizes current technologies without being locked to a particular hardware platform. The innovation also provides a cost-effective way of streaming large amounts of data from sensors to disk, enabling many applications to store raw sensor data and perform post and signal processing offline. This recording system will be applicable to many applications needing realworld, high-speed data collection, including electronic warfare, softwaredefined radar, signal history storage of multispectral sensors, development of autonomous vehicles, and more.

Microcapillary Features in Silicon Alloyed High-Strength Cast Iron

Directory of Open Access Journals (Sweden)

R.K. Hasanli

2017-04-01

Full Text Available Present study explores features of silicon micro capillary in alloyed high-strength cast iron with nodular graphite (ductile iron produced in metal molds. It identified the nature and mechanism of micro liquation of silicon in a ductile iron alloyed with Nickel and copper, and demonstrated significant change of structural-quality characteristics. It was concluded that the matrix of alloyed ductile iron has a heterogeneous structure with cross reinforcement and high-silicon excrement areas.

The high speed civil transport and NASA's High Speed Research (HSR) program

Science.gov (United States)

Shaw, Robert J.

1994-01-01

Ongoing studies being conducted not only in this country but in Europe and Asia suggest that a second generation supersonic transport, or High-Speed Civil Transport (HSCT), could become an important part of the 21st century international air transportation system. However, major environmental compatibility and economic viability issues must be resolved if the HSCT is to become a reality. This talk will overview the NASA High-Speed Research (HSR) program which is aimed at providing the U.S. industry with a technology base to allow them to consider launching an HSCT program early in the next century. The talk will also discuss some of the comparable activities going on within Europe and Japan.

Breakup characteristics of power-law liquid sheets formed by two impinging jets

International Nuclear Information System (INIS)

Bai, Fuqiang; Diao, Hai; Chang, Qing; Wang, Endong; Du, Qing; Zhang, Mengzheng

2014-01-01

The breakup characteristics of the shear-thinning power-law liquid sheets formed by two impinging jets have been investigated with the shadowgraph technique. This paper focuses on the effects of spray parameters (jet velocity), physical parameters (viscosity) and geometry parameters (impinging angle and nozzle cross-sectional shape) on the breakup behaviors of liquid sheets. The breakup mode, sheet length and expansion angle of the sheet are extracted from the spray images obtained by a high speed camera. Impinging angle and Weber number play the similar roles in promoting the breakup of liquid sheets. With the increase of jet velocity, five different breakup modes are observed and the expansion angle increases consistently after the closed-rim mode while the sheet length first increases and then decreases. But there exists a concave consisting of a fierce drop and a second rising process on the sheet length curve for the fluid with smaller viscosity. Different nozzle cross-sectional shapes emphasize significant effects on the sheet length and expansion angle of liquid sheets. At a fixed Weber number, the liquid sheet with greater viscosity has a greater sheet length and a smaller expansion angle due to the damping effect of viscosity. (papers)

Using a High-Speed Camera to Measure the Speed of Sound

Science.gov (United States)

Hack, William Nathan; Baird, William H.

2012-01-01

The speed of sound is a physical property that can be measured easily in the lab. However, finding an inexpensive and intuitive way for students to determine this speed has been more involved. The introduction of affordable consumer-grade high-speed cameras (such as the Exilim EX-FC100) makes conceptually simple experiments feasible. Since the…

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

OpenAIRE

Jinzhang Liu; Nunzio Motta; Soonil Lee

2012-01-01

Summary ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the ...

33 CFR 84.24 - High-speed craft.

Science.gov (United States)

2010-07-01

... 33 Navigation and Navigable Waters 1 2010-07-01 2010-07-01 false High-speed craft. 84.24 Section... RULES ANNEX I: POSITIONING AND TECHNICAL DETAILS OF LIGHTS AND SHAPES § 84.24 High-speed craft. (a) The masthead light of high-speed craft with a length to breadth ratio of less than 3.0 may be placed at a...

Modern trends in designing high-speed trains

Directory of Open Access Journals (Sweden)

Golubović Snežana D.

2015-01-01

Full Text Available Increased advantages of railway transportation systems over other types of transportation systems in the past sixty years have been a result of an intensive development of the new generations of high-speed trains. Not only do these types of trains comply with the need for increased speed of transportation and make the duration of the journey shorter, but they also meet the demands for increased reliability, safety and direct application of energy efficiency to the transportation system itself. Along with increased train speed, the motion resistance is increased as well, whereby at speeds over 200 km/h the proportion of air resistance becomes the most dominant member. One of the most efficient measures for reducing air resistance, as well as other negative consequences of high-speed motion, is the development of the aerodynamic shape of the train. This paper presents some construction solutions that affect the aerodynamic properties of high-speed trains, first and foremost, the nose shape, as well as the similarities and differences of individual subsystems necessary for the functioning of modern high-speed rail systems. We analysed two approaches to solving the problem of the aerodynamic shape of the train and the appropriate infrastructure using the examples of Japan and France. Two models of high-speed trains, Shinkansen (Japan and TGV, i.e. AGV (France, have been discussed.

Balance of the West Antarctic Ice Sheet

Science.gov (United States)

2002-01-01

For several decades, measurements of the West Antarctic Ice Sheet showed it to be retreating rapidly. But new data derived from satellite-borne radar sensors show the ice sheet to be growing. Changing Antarctic ice sheets remains an area of high scientific interest, particularly in light of recent global warming concerns. These new findings are significant because scientists estimate that sea level would rise 5-6 meters (16-20 feet) if the ice sheet collapsed into the sea. Do these new measurements signal the end of the ice sheet's 10,000-year retreat? Or, are these new satellite data simply much more accurate than the sparse ice core and surface measurements that produced the previous estimates? Another possibility is that the ice accumulation may simply indicate that the ice sheet naturally expands and retreats in regular cycles. Cryologists will grapple with these questions, and many others, as they examine the new data. The image above depicts the region of West Antarctica where scientists measured ice speed. The fast-moving central ice streams are shown in red. Slower tributaries feeding the ice streams are shown in blue. Green areas depict slow-moving, stable areas. Thick black lines depict the areas that collect snowfall to feed their respective ice streams. Reference: Ian Joughin and Slawek Tulaczyk Science Jan 18 2002: 476-480. Image courtesy RADARSAT Antarctic Mapping Project

New techniques used to realize silicon photocells

International Nuclear Information System (INIS)

Siffert, P.

1978-01-01

The techniques used to realize the terrestrial silicon solar cells being considered the possible improvements of these methods are discussed. The various approaches under development to prepare silicon sheets in a continuous way are considered for both self-supporting or substrate deposited layers. Finally, the various methods used or under investigation to obtain the surface potential barrier are considered; MIS, heterojunction and ion implantation [fr

Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

2008-08-15

The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

A Serializer ASIC for High Speed Data Transmission in Cryogenic and HiRel Environment

CERN Document Server

Liu, T; The ATLAS collaboration

2010-01-01

A high speed 16:1 serializer ASIC has been developed using a commercial 0.25 μm silicon-on-sapphire CMOS technology. At room temperature the ASIC operates from 4.0 to 5.7 Gbps with power consumption of 463 mW. The total jitter is 62 ps at the bit error rate of 10-12 at 5 Gbps. A 200-MeV proton beam test indicates that the ASIC is suitable for high energy physics applications. A liquid nitrogen temperature test indicates that the ASIC may be used at cryogenic temperature applications. The reliability of the serializer at liquid nitrogen temperature is to be studied. A 6-lane serializer array with 10 Gbps/lane with redundancy capability is under development.

Flapping dynamics of a thin liquid sheet

Science.gov (United States)

Vadivukkarasan, M.; Kumaran, Dhivyaraja; Panchagnula, Mahesh; Multi-phase flow physics Group Team

2017-11-01

We attempt to delineate and describe the complete evolution of a thin soap film when air is blown through a nozzle in the normal direction. The sequence of events and its intrinsic dynamics are captured using high speed imaging. By careful observation, it was observed that multiple mechanisms occur in the same system and each event is triggered by an independent mechanism. The events include (a) flapping of a liquid sheet and pinching of the bubble, (b) onset of rupture on the liquid sheet, (c) formation of ligaments and (d) ejection of drops. From this study, it is shown that these events are predominantly governed by Kelvin-Helmholtz instability, Taylor - Culick law, Rayleigh-Taylor instability and capillary instability, respectively. The present experiments can be considered as an extension to the previous studies on soap films as well as thin flapping sheets which has direct relevance to coaxial atomizers used in aircraft applications.

Functional silicone copolymers and elastomers with high dielectric permittivity

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

Dielectric elastomers (DEs) are a new and promising transducer technology and are often referred to as ‘artificial muscles’, due to their ability to undergo large deformations when stimulated by electric fields. DEs consist of a soft and thin elastomeric film sandwiched between compliant electrodes......, thereby forming a capacitor [1]. Silicone elastomers are one of the most used materials for DEs due to their high efficiency, fast response times and low viscous losses. The major disadvantage of silicone elastomers is that they possess relatively low dielectric permittivity, which means that a high...... electrical field is necessary to operate the DE. The necessary electrical field can be lowered by creating silicone elastomers with higher dielectric permittivity, i.e. with a higher energy density.The aim of this work is to create new and improved silicone elastomers with high dielectric permittivity...

Changes of indicators of high-speed and high-speed and power preparedness at volleyball players of 12–13 years old

Directory of Open Access Journals (Sweden)

Oleg Shevchenko

2016-04-01

Full Text Available Purpose: to define changes of indicators of high-speed and high-speed and power preparedness of volleyball players of 12–13 years old. Material & Methods: the test exercises, which are recommended by the training program of CYSS on volleyball, were used for the definition of the level of development of high-speed and high-speed and power abilities of volleyball players. 25 young volleyball players from the group of the previous basic preparation took part in the experiment. Sports experience of sportsmen is 3–4 years. The analysis of scientifically-methodical literature, pedagogical testing, pedagogical experiment, methods of mathematical statistics were carried out. Results: the analyzed level of high-speed and high-speed and power abilities of volleyball players. Conclusions: the results had reliable changes (t=2,2–2,4 at р<0,05 of the level of high-speed and high-speed and power abilities of volleyball players of 12–13years old in the experimental group at the end of the experiment, except run on 30 m that demonstrates a positive influence of application of special exercises in the educational-training process.

Reducing Heating In High-Speed Cinematography

Science.gov (United States)

Slater, Howard A.

1989-01-01

Infrared-absorbing and infrared-reflecting glass filters simple and effective means for reducing rise in temperature during high-speed motion-picture photography. "Hot-mirror" and "cold-mirror" configurations, employed in projection of images, helps prevent excessive heating of scenes by powerful lamps used in high-speed photography.

High speed data acquisition

International Nuclear Information System (INIS)

Cooper, P.S.

1997-07-01

A general introduction to high speed data acquisition system techniques in modern particle physics experiments is given. Examples are drawn from the SELEX(E78 1) high statistics charmed baryon production and decay experiment now taking data at Fermilab

Super soft silicone elastomers with high dielectric permittivity

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Hvilsted, Søren

2015-01-01

Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young’s modulus and increasing the dielectric permittivity of silicone...... elastomers. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. New soft elastomer matrices with high dielectric permittivity and low Young’s modulus, with no loss of mechanical stability, were prepared by two different...... approaches using chloropropyl-functional silicone polymers. The first approach was based on synthesised chloropropyl-functional copolymers that were cross-linkable and thereby formed the basis of new silicone networks with high dielectric permittivity (e.g. a 43% increase). These networks were soft without...

Wake flow characteristics at high wind speed

DEFF Research Database (Denmark)

Aagaard Madsen, Helge; Larsen, Torben J.; Larsen, Gunner Chr.

2016-01-01

Wake flow characteristic at high wind speeds is the main subject of this paper. Although the wake losses decrease at high wind speeds it has been found in a recent study that for multiple wake inflow the increase in loading due to wake effects are substantial even at wind speeds well above rated ...

160-Gb/s Silicon All-Optical Packet Switch for Buffer-less Optical Burst Switching

DEFF Research Database (Denmark)

Hu, Hao; Ji, Hua; Pu, Minhao

2015-01-01

We experimentally demonstrate a 160-Gb/s Ethernet packet switch using an 8.6-mm-long silicon nanowire for optical burst switching, based on cross phase modulation in silicon. One of the four packets at the bit rate of 160 Gb/s is switched by an optical control signal using a silicon based 1 × 1 all......-optical packet switch. Error free performance (BER silicon packet switch based optical burst switching, which might be desirable for high-speed interconnects within a short...

High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

KAUST Repository

Sevilla, Galo T.

2016-02-29

Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

Science.gov (United States)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

Process development for high-efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Gee, J.M.; Basore, P.A.; Buck, M.E.; Ruby, D.S.; Schubert, W.K.; Silva, B.L.; Tingley, J.W.

1991-12-31

Fabrication of high-efficiency silicon solar cells in an industrial environment requires a different optimization than in a laboratory environment. Strategies are presented for process development of high-efficiency silicon solar cells, with a goal of simplifying technology transfer into an industrial setting. The strategies emphasize the use of statistical experimental design for process optimization, and the use of baseline processes and cells for process monitoring and quality control. 8 refs.

An integrated single- and two-photon non-diffracting light-sheet microscope

Science.gov (United States)

Lau, Sze Cheung; Chiu, Hoi Chun; Zhao, Luwei; Zhao, Teng; Loy, M. M. T.; Du, Shengwang

2018-04-01

We describe a fluorescence optical microscope with both single-photon and two-photon non-diffracting light-sheet excitations for large volume imaging. With a special design to accommodate two different wavelength ranges (visible: 400-700 nm and near infrared: 800-1200 nm), we combine the line-Bessel sheet (LBS, for single-photon excitation) and the scanning Bessel beam (SBB, for two-photon excitation) light sheet together in a single microscope setup. For a transparent thin sample where the scattering can be ignored, the LBS single-photon excitation is the optimal imaging solution. When the light scattering becomes significant for a deep-cell or deep-tissue imaging, we use SBB light-sheet two-photon excitation with a longer wavelength. We achieved nearly identical lateral/axial resolution of about 350/270 nm for both imagings. This integrated light-sheet microscope may have a wide application for live-cell and live-tissue three-dimensional high-speed imaging.

14 CFR 25.253 - High-speed characteristics.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false High-speed characteristics. 25.253 Section...-speed characteristics. (a) Speed increase and recovery characteristics. The following speed increase and recovery characteristics must be met: (1) Operating conditions and characteristics likely to cause...

Chicago-St. Louis high speed rail plan

International Nuclear Information System (INIS)

Stead, M.E.

1994-01-01

The Illinois Department of Transportation (IDOT), in cooperation with Amtrak, undertook the Chicago-St. Louis High Speed Rail Financial and Implementation Plan study in order to develop a realistic and achievable blueprint for implementation of high speed rail in the Chicago-St. Louis corridor. This report presents a summary of the Price Waterhouse Project Team's analysis and the Financial and Implementation Plan for implementing high speed rail service in the Chicago-St. Louis corridor

Chicago-St. Louis high speed rail plan

Energy Technology Data Exchange (ETDEWEB)

Stead, M.E.

1994-12-31

The Illinois Department of Transportation (IDOT), in cooperation with Amtrak, undertook the Chicago-St. Louis High Speed Rail Financial and Implementation Plan study in order to develop a realistic and achievable blueprint for implementation of high speed rail in the Chicago-St. Louis corridor. This report presents a summary of the Price Waterhouse Project Team`s analysis and the Financial and Implementation Plan for implementing high speed rail service in the Chicago-St. Louis corridor.

Lubrication and cooling for high speed gears

Science.gov (United States)

Townsend, D. P.

1985-01-01

The problems and failures occurring with the operation of high speed gears are discussed. The gearing losses associated with high speed gearing such as tooth mesh friction, bearing friction, churning, and windage are discussed with various ways shown to help reduce these losses and thereby improve efficiency. Several different methods of oil jet lubrication for high speed gearing are given such as into mesh, out of mesh, and radial jet lubrication. The experiments and analytical results for the various methods of oil jet lubrication are shown with the strengths and weaknesses of each method discussed. The analytical and experimental results of gear lubrication and cooling at various test conditions are presented. These results show the very definite need of improved methods of gear cooling at high speed and high load conditions.

The use of high-speed imaging in education

Science.gov (United States)

Kleine, H.; McNamara, G.; Rayner, J.

2017-02-01

Recent improvements in camera technology and the associated improved access to high-speed camera equipment have made it possible to use high-speed imaging not only in a research environment but also specifically for educational purposes. This includes high-speed sequences that are created both with and for a target audience of students in high schools and universities. The primary goal is to engage students in scientific exploration by providing them with a tool that allows them to see and measure otherwise inaccessible phenomena. High-speed imaging has the potential to stimulate students' curiosity as the results are often surprising or may contradict initial assumptions. "Live" demonstrations in class or student- run experiments are highly suitable to have a profound influence on student learning. Another aspect is the production of high-speed images for demonstration purposes. While some of the approaches known from the application of high speed imaging in a research environment can simply be transferred, additional techniques must often be developed to make the results more easily accessible for the targeted audience. This paper describes a range of student-centered activities that can be undertaken which demonstrate how student engagement and learning can be enhanced through the use of high speed imaging using readily available technologies.

High-speed elevators controlled by inverters

Energy Technology Data Exchange (ETDEWEB)

Sakai, Yoshio; Takahashi, Hideaki; Nakamura, Kiyoshi; Kinoshita, Hiroshi

1988-10-25

The super-high-speed elevator with superiority to 300m/min of speed, requires both the large capacity power and wide range speed controls. Therefore, in order to materialize the smooth and quiet operation characteristics, by applying the inverter control, the low torque ripple control in the low frequency range and high frequency large capacity inverting for lowering the motor in noise are necessary with their being assured of reliability. To satisfy the above necessary items, together with the development of a sine wave pulse width and frequency modulation (PWM/PFM) control system, to more precisely enable the sine wave electric current control, and 3kHz switching power converter, using a 800A power transistor module, a supervoltage control circuit under the extraordinary condition was designed. As a result of commercializing a 360m/min super-high speed inverter elevator, the power source unit, due to the effect of high power factor, could be reduced by 30% in capacity and also the higher harmonic wave including ratio could be considerably lowered to the inferiority to 5%. 2 references, 7 figures, 1 table.

High - speed steel for precise cased tools

International Nuclear Information System (INIS)

Karwiarz, J.; Mazur, A.

2001-01-01

The test results of high-vanadium high - speed steel (SWV9) for precise casted tools are presented. The face -milling cutters of NFCa80A type have been tested in industrial operating conditions. An average life - time of SWV9 steel tools was 3-10 times longer compare to the conventional high - speed milling cutters. Metallography of SWB9 precise casted steel revealed beneficial for tool properties distribution of primary vanadium carbides in the steel matrix. Presented results should be a good argument for wide application of high - vanadium high - speed steel for precise casted tools. (author)

Design of Helical Self-Piercing Rivet for Joining Aluminum Alloy and High-Strength Steel Sheets

International Nuclear Information System (INIS)

Kim, W. Y.; Kim, D. B.; Park, J. G; Kim, D. H.; Kim, K. H.; Lee, I. H.; Cho, H. Y.

2014-01-01

A self-piercing rivet (SPR) is a mechanical component for joining dissimilar material sheets such as those of aluminum alloy and steel. Unlike conventional rivets, the SPR directly pierces sheets without the need for drilling them beforehand. However, the regular SPR can undergo buckling when it pierces a high-strength steel sheet, warranting the design of a helical SPR. In this study, the joining and forging processes using the helical SPR were simulated using the commercial FEM code, DEFORM-3D. High-tensile-strength steel sheets of different strengths were joined with aluminum alloy sheets using the designed helical SPR. The simulation results were found to agree with the experimental results, validating the optimal design of a helical SPR that can pierce high-strength steel sheets

Design of Helical Self-Piercing Rivet for Joining Aluminum Alloy and High-Strength Steel Sheets

Energy Technology Data Exchange (ETDEWEB)

Kim, W. Y.; Kim, D. B.; Park, J. G; Kim, D. H.; Kim, K. H.; Lee, I. H.; Cho, H. Y. [Chungbuk National University, Cheongju (Korea, Republic of)

2014-07-15

A self-piercing rivet (SPR) is a mechanical component for joining dissimilar material sheets such as those of aluminum alloy and steel. Unlike conventional rivets, the SPR directly pierces sheets without the need for drilling them beforehand. However, the regular SPR can undergo buckling when it pierces a high-strength steel sheet, warranting the design of a helical SPR. In this study, the joining and forging processes using the helical SPR were simulated using the commercial FEM code, DEFORM-3D. High-tensile-strength steel sheets of different strengths were joined with aluminum alloy sheets using the designed helical SPR. The simulation results were found to agree with the experimental results, validating the optimal design of a helical SPR that can pierce high-strength steel sheets.

LSSA large area silicon sheet task continuous Czochralski process development

Science.gov (United States)

Rea, S. N.

1978-01-01

A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

Interactive Ice Sheet Flowline Model for High School and College Students

Science.gov (United States)

Stearns, L. A.; Rezvanbehbahani, S.; Shankar, S.

2017-12-01

Teaching about climate and climate change is conceptually challenging. While teaching tools and lesson plans are rapidly evolving to help teachers and students improve their understanding of climate processes, there are very few tools targeting ice sheet and glacier dynamics. We have built an interactive ice sheet model that allows students to explore how Antarctic glaciers respond to different climate perturbations. Interactive models offer advantages that are hard to obtain in traditional classroom settings; users can systematically investigate hypothetical situations, explore the effects of modifying systems, and repeatedly observe how systems interrelate. As a result, this project provides a much-needed bridge between the data and models used by the scientific community and students in high school and college. We target our instructional and assessment activities to three high school and college students with the overall aim of increasing understanding of ice sheet dynamics and the different ways that ice sheets are impacted by climate change, while also improving their fundamental math skills.

Material Properties of Laser-Welded Thin Silicon Foils

Directory of Open Access Journals (Sweden)

M. T. Hessmann

2013-01-01

Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

Improvements in numerical modelling of highly injected crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Altermatt, P.P. [University of New South Wales, Centre for Photovoltaic Engineering, 2052 Sydney (Australia); Sinton, R.A. [Sinton Consulting, 1132 Green Circle, 80303 Boulder, CO (United States); Heiser, G. [University of NSW, School of Computer Science and Engineering, 2052 Sydney (Australia)

2001-01-01

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, n{sub i}=1.00x10{sup 10}cm{sup -3}, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of n{sub i} if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

Active inductor shunt peaking in high-speed VCSEL driver design

CERN Document Server

Liang, Futian; Hou, Suen; Liu, Chonghan; Liu, Tiankuan; Su, Da-Shung; Teng, Ping-Kun; Xiang, Annie; Ye, Jingbo; Jin, Ge

2013-01-01

An all transistor active inductor shunt peaking structure has been used in a prototype of 8-Gbps high-speed VCSEL driver which is designed for the optical link in ATLAS liquid Argon calorimeter upgrade. The VCSEL driver is fabricated in a commercial 0.25-um Silicon-on-Sapphire (SoS) CMOS process for radiation tolerant purpose. The all transistor active inductor shunt peaking is used to overcome the bandwidth limitation from the CMOS process. The peaking structure has the same peaking effect as the passive one, but takes a small area, does not need linear resistors and can overcome the process variation by adjust the peaking strength via an external control. The design has been tapped out, and the prototype has been proofed by the preliminary electrical test results and bit error ratio test results. The driver achieves 8-Gbps data rate as simulated with the peaking. We present the all transistor active inductor shunt peaking structure, simulation and test results in this paper.

Current and high-β sheets in CIR streams: statistics and interaction with the HCS and the magnetosphere

Science.gov (United States)

Potapov, A. S.

2018-04-01

Thirty events of CIR streams (corotating interaction regions between fast and slow solar wind) were analyzed in order to study statistically plasma structure within the CIR shear zones and to examine the interaction of the CIRs with the heliospheric current sheet (HCS) and the Earth's magnetosphere. The occurrence of current layers and high-beta plasma sheets in the CIR structure has been estimated. It was found that on average, each of the CIR streams had four current layers in its structure with a current density of more than 0.12 A/m2 and about one and a half high-beta plasma regions with a beta value of more than five. Then we traced how and how often the high-speed stream associated with the CIR can catch up with the heliospheric current sheet (HCS) and connect to it. The interface of each fourth CIR stream coincided in time within an hour with the HCS, but in two thirds of cases, the CIR connection with the HCS was completely absent. One event of the simultaneous observation of the CIR stream in front of the magnetosphere by the ACE satellite in the vicinity of the L1 libration point and the Wind satellite in the remote geomagnetic tail was considered in detail. Measurements of the components of the interplanetary magnetic field and plasma parameters showed that the overall structure of the stream is conserved. Moreover, some details of the fine structure are also transferred through the magnetosphere. In particular, the so-called "magnetic hole" almost does not change its shape when moving from L1 point to a neighborhood of L2 point.

High-speed ground transportation development outside United States

Energy Technology Data Exchange (ETDEWEB)

Eastham, T.R. [Queen`s Univ., Kingston, Ontario (United Kingdom)

1995-09-01

This paper surveys the state of high-speed (in excess of 200 km/h) ground-transportation developments outside the United States. Both high-speed rail and Maglev systems are covered. Many vehicle systems capable of providing intercity service in the speed range 200--500 km/h are or will soon be available. The current state of various technologies, their implementation, and the near-term plans of countries that are most active in high-speed ground transportation development are reported.

Aerodynamic design on high-speed trains

Science.gov (United States)

Ding, San-San; Li, Qiang; Tian, Ai-Qin; Du, Jian; Liu, Jia-Li

2016-04-01

Compared with the traditional train, the operational speed of the high-speed train has largely improved, and the dynamic environment of the train has changed from one of mechanical domination to one of aerodynamic domination. The aerodynamic problem has become the key technological challenge of high-speed trains and significantly affects the economy, environment, safety, and comfort. In this paper, the relationships among the aerodynamic design principle, aerodynamic performance indexes, and design variables are first studied, and the research methods of train aerodynamics are proposed, including numerical simulation, a reduced-scale test, and a full-scale test. Technological schemes of train aerodynamics involve the optimization design of the streamlined head and the smooth design of the body surface. Optimization design of the streamlined head includes conception design, project design, numerical simulation, and a reduced-scale test. Smooth design of the body surface is mainly used for the key parts, such as electric-current collecting system, wheel truck compartment, and windshield. The aerodynamic design method established in this paper has been successfully applied to various high-speed trains (CRH380A, CRH380AM, CRH6, CRH2G, and the Standard electric multiple unit (EMU)) that have met expected design objectives. The research results can provide an effective guideline for the aerodynamic design of high-speed trains.

High surface area silicon materials: fundamentals and new technology.

Science.gov (United States)

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Surface effects in segmented silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Kopsalis, Ioannis

2017-05-15

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO{sub 2} layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO{sub 2} and at the Si-SiO{sub 2} interface. In this thesis the surface radiation damage of the Si-SiO{sub 2} system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO{sub 2} of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface

Surface effects in segmented silicon sensors

International Nuclear Information System (INIS)

Kopsalis, Ioannis

2017-05-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface. In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

KAUST Repository

Rojas, Jhonathan Prieto

2013-10-01

Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\\ m cm}2 and thickness: 25 \\\\mu{\\ m m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

Science.gov (United States)

Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

2009-04-01

This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

Nonlinear optical properties of silicon waveguides

International Nuclear Information System (INIS)

Tsang, H K; Liu, Y

2008-01-01

Recent work on two-photon absorption (TPA), stimulated Raman scattering (SRS) and optical Kerr effect in silicon-on-insulator (SOI) waveguides is reviewed and some potential applications of these optical nonlinearities, including silicon-based autocorrelation detectors, optical amplifiers, high speed optical switches, optical wavelength converters and self-phase modulation (SPM), are highlighted. The importance of free carriers generated by TPA in nonlinear devices is discussed, and a generalized definition of the nonlinear effective length to cater for nonlinear losses is proposed. How carrier lifetime engineering, and in particular the use of helium ion implantation, can enhance the nonlinear effective length for nonlinear devices is also discussed

Development of a low energy micro sheet forming machine

Science.gov (United States)

Razali, A. R.; Ann, C. T.; Shariff, H. M.; Kasim, N. I.; Musa, M. A.; Ahmad, A. F.

2017-10-01

It is expected that with the miniaturization of materials being processed, energy consumption is also being `miniaturized' proportionally. The focus of this study was to design a low energy micro-sheet-forming machine for thin sheet metal application and fabricate a low direct current powered micro-sheet-forming machine. A prototype of low energy system for a micro-sheet-forming machine which includes mechanical and electronic elements was developed. The machine was tested for its performance in terms of natural frequency, punching forces, punching speed and capability, energy consumption (single punch and frequency-time based). Based on the experiments, the machine can do 600 stroke per minute and the process is unaffected by the machine's natural frequency. It was also found that sub-Joule of power was required for a single stroke of punching/blanking process. Up to 100micron thick carbon steel shim was successfully tested and punched. It concludes that low power forming machine is feasible to be developed and be used to replace high powered machineries to form micro-products/parts.

Silicon photonics for telecommunications and biomedicine

CERN Document Server

Fathpour, Sasan

2011-01-01

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

Silicon-embedded copper nanostructure network for high energy storage

Science.gov (United States)

Yu, Tianyue

2016-03-15

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

Silicon-embedded copper nanostructure network for high energy storage

Energy Technology Data Exchange (ETDEWEB)

Yu, Tianyue

2018-01-23

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

Corrosion of silicon nitride in high temperature alkaline solutions

Energy Technology Data Exchange (ETDEWEB)

Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

2016-08-01

The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

International Nuclear Information System (INIS)

Gessner, T.; Irmer, K.

1983-01-01

A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

Full-frame, high-speed 3D shape and deformation measurements using stereo-digital image correlation and a single color high-speed camera

Science.gov (United States)

Yu, Liping; Pan, Bing

2017-08-01

Full-frame, high-speed 3D shape and deformation measurement using stereo-digital image correlation (stereo-DIC) technique and a single high-speed color camera is proposed. With the aid of a skillfully designed pseudo stereo-imaging apparatus, color images of a test object surface, composed of blue and red channel images from two different optical paths, are recorded by a high-speed color CMOS camera. The recorded color images can be separated into red and blue channel sub-images using a simple but effective color crosstalk correction method. These separated blue and red channel sub-images are processed by regular stereo-DIC method to retrieve full-field 3D shape and deformation on the test object surface. Compared with existing two-camera high-speed stereo-DIC or four-mirror-adapter-assisted singe-camera high-speed stereo-DIC, the proposed single-camera high-speed stereo-DIC technique offers prominent advantages of full-frame measurements using a single high-speed camera but without sacrificing its spatial resolution. Two real experiments, including shape measurement of a curved surface and vibration measurement of a Chinese double-side drum, demonstrated the effectiveness and accuracy of the proposed technique.

Prospects for and tests of hadron calorimetry with silicon

Energy Technology Data Exchange (ETDEWEB)

Brau, James E. [Univ. of Oregon, OR (United States). Dept. of Physics; Gabriel, Tony A. [Oak Ridge National Lab., TN (United States); Rancoita, P. G. [INFN, Milan (Italy)

1989-03-01

Hadron calorimetry with silicon may provide crucial capabilities in experiments at the high luminosity, high energy colliders of the future, particularly due to silicon's fast intrinsic speed and absolute calibration. The important underlying processes of our understanding of hadron calorimeters are reviewed to set the framework for the presentation of recent calculations of the expected performance of silicon detector based hadron calorimeters. Such devices employing uranium are expected to achieve the compensation condition (that is, the ratio of the most probable electron signal to hadron signal (e/h) is approx.1.0) based on the understanding that has been derived from the uranium-liquid argon and uranium-plastic scintillator systems. In fact, even lead-silicon calorimeters are found to achieve the attractive value for the e/h ratio of 1.16 at 10 GeV. An experimental test of these predictions is underway at CERN by the SICAPO Collaboration. 64 refs., 19 figs.

Prospects for and tests of hadron calorimetry with silicon

International Nuclear Information System (INIS)

Brau, J.E.; Gabriel, T.A.; Rancoita, P.G.

1989-03-01

Hadron calorimetry with silicon may provide crucial capabilities in experiments at the high luminosity, high energy colliders of the future, particularly due to silicon's fast intrinsic speed and absolute calibration. The important underlying processes of our understanding of hadron calorimeters are reviewed to set the framework for the presentation of recent calculations of the expected performance of silicon detector based hadron calorimeters. Such devices employing uranium are expected to achieve the compensation condition (that is, the ratio of the most probable electron signal to hadron signal (e/h) is ∼1.0) based on the understanding that has been derived from the uranium-liquid argon and uranium-plastic scintillator systems. In fact, even lead-silicon calorimeters are found to achieve the attractive value for the e/h ratio of 1.16 at 10 GeV. An experimental test of these predictions is underway at CERN by the SICAPO Collaboration. 64 refs., 19 figs

Silicon nanowire structures as high-sensitive pH-sensors

International Nuclear Information System (INIS)

Belostotskaya, S O; Chuyko, O V; Kuznetsov, A E; Kuznetsov, E V; Rybachek, E N

2012-01-01

Sensitive elements for pH-sensors created on silicon nanostructures were researched. Silicon nanostructures have been used as ion-sensitive field effect transistor (ISFET) for the measurement of solution pH. Silicon nanostructures have been fabricated by 'top-down' approach and have been studied as pH sensitive elements. Nanowires have the higher sensitivity. It was shown, that sensitive element, which is made of 'one-dimensional' silicon nanostructure have bigger pH-sensitivity as compared with 'two-dimensional' structure. Integrated element formed from two p- and n-type nanowire ISFET ('inverter') can be used as high sensitivity sensor for local relative change [H+] concentration in very small volume.

High speed VLSI neural network for high energy physics

NARCIS (Netherlands)

Masa, P.; Masa, P.; Hoen, K.; Hoen, Klaas; Wallinga, Hans

1994-01-01

A CMOS neural network IC is discussed which was designed for very high speed applications. The parallel architecture, analog computing and digital weight storage provides unprecedented computing speed combined with ease of use. The circuit classifies up to 70 dimensional vectors within 20

Advanced dendritic web growth development and development of single-crystal silicon dendritic ribbon and high-efficiency solar cell program

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.

1986-01-01

Efforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.

High frequency guided wave propagation in monocrystalline silicon wafers

OpenAIRE

Pizzolato, M.; Masserey, B.; Robyr, J. L.; Fromme, P.

2017-01-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full...

Spatial structure of the plasma sheet boundary layer at distances greater than 180 RE as derived from energetic particle measurements on GEOTAIL

Directory of Open Access Journals (Sweden)

T. Yamamoto

Full Text Available We have analyzed the onsets of energetic particle bursts detected by the ICS and STICS sensors of the EPIC instrument on board the GEOTAIL spacecraft in the deep magnetotail (i.e., at distances greater than 180 RE. Such bursts are commonly observed at the plasma-sheet boundary layer (PSBL and are highly collimated along the magnetic field. The bursts display a normal velocity dispersion (i.e., the higher-speed particles are seen first, while the progressively lower speed particles are seen later when observed upon entry of the spacecraft from the magnetotail lobes into the plasma sheet. Upon exit from the plasma sheet a reverse velocity dispersion is observed (i.e., lower-speed particles disappear first and higher-speed particles disappear last. Three major findings are as follows. First, the tailward-jetting energetic particle populations of the distant-tail plasma sheet display an energy layering: the energetic electrons stream along open PSBL field lines with peak fluxes at the lobes. Energetic protons occupy the next layer, and as the spacecraft moves towards the neutral sheet progressively decreasing energies are encountered systematically. These plasma-sheet layers display spatial symmetry, with the plane of symmetry the neutral sheet. Second, if we consider the same energy level of energetic particles, then the H+ layer is confined within that of the energetic electron, the He++ layer is confined within that of the proton, and the oxygen layer is confined within the alpha particle layer. Third, whenever the energetic electrons show higher fluxes inside the plasma sheet as compared to those at the boundary layer, their angular distribution is isotropic irrespective of the Earthward or tailward character of fluxes, suggesting a closed field line topology.

Spatial structure of the plasma sheet boundary layer at distances greater than 180 RE as derived from energetic particle measurements on GEOTAIL

Directory of Open Access Journals (Sweden)

D. V. Sarafopoulos

1997-10-01

Full Text Available We have analyzed the onsets of energetic particle bursts detected by the ICS and STICS sensors of the EPIC instrument on board the GEOTAIL spacecraft in the deep magnetotail (i.e., at distances greater than 180 RE. Such bursts are commonly observed at the plasma-sheet boundary layer (PSBL and are highly collimated along the magnetic field. The bursts display a normal velocity dispersion (i.e., the higher-speed particles are seen first, while the progressively lower speed particles are seen later when observed upon entry of the spacecraft from the magnetotail lobes into the plasma sheet. Upon exit from the plasma sheet a reverse velocity dispersion is observed (i.e., lower-speed particles disappear first and higher-speed particles disappear last. Three major findings are as follows. First, the tailward-jetting energetic particle populations of the distant-tail plasma sheet display an energy layering: the energetic electrons stream along open PSBL field lines with peak fluxes at the lobes. Energetic protons occupy the next layer, and as the spacecraft moves towards the neutral sheet progressively decreasing energies are encountered systematically. These plasma-sheet layers display spatial symmetry, with the plane of symmetry the neutral sheet. Second, if we consider the same energy level of energetic particles, then the H+ layer is confined within that of the energetic electron, the He++ layer is confined within that of the proton, and the oxygen layer is confined within the alpha particle layer. Third, whenever the energetic electrons show higher fluxes inside the plasma sheet as compared to those at the boundary layer, their angular distribution is isotropic irrespective of the Earthward or tailward character of fluxes, suggesting a closed field line topology.

Pulsar current sheet C̆erenkov radiation

Science.gov (United States)

Zhang, Fan

2018-04-01

Plasma-filled pulsar magnetospheres contain thin current sheets wherein the charged particles are accelerated by magnetic reconnections to travel at ultra-relativistic speeds. On the other hand, the plasma frequency of the more regular force-free regions of the magnetosphere rests almost precisely on the upper limit of radio frequencies, with the cyclotron frequency being far higher due to the strong magnetic field. This combination produces a peculiar situation, whereby radio-frequency waves can travel at subluminal speeds without becoming evanescent. The conditions are thus conducive to C̆erenkov radiation originating from current sheets, which could plausibly serve as a coherent radio emission mechanism. In this paper we aim to provide a portrait of the relevant processes involved, and show that this mechanism can possibly account for some of the most salient features of the observed radio signals.

Silicon detectors for x and gamma-ray with high radiation resistance

International Nuclear Information System (INIS)

Cimpoca, Valerica; Popescu, Ion V.; Ruscu, Radu

2001-01-01

Silicon detectors are widely used in X and gamma-ray spectroscopy for direct detection or coupled with scintillators in high energy nuclear physics (modern collider experiments are representative), medicine and industrial applications. In X and gamma dosimetry, a low detection limit (under 6 KeV) with silicon detectors becomes available. Work at the room temperature is now possible due to the silicon processing evolution, which assures low reverse current and high life time of carriers. For several years, modern semiconductor detectors have been the primary choice for the measurement of nuclear radiation in various scientific fields. Nowadays the recently developed high resolution silicon detectors found their way in medical applications. As a consequence many efforts have been devoted to the development of high sensitivity and radiation hardened X and gamma-ray detectors for the energy range of 5 - 150 keV. The paper presents some results concerning the technology and behaviour of X and Gamma ray silicon detectors used in physics research, industrial and medical radiography. The electrical characteristics of these detectors, their modification after exposure to radiation and the results of spectroscopic X and Gamma-ray measurements are discussed. The results indicated that the proposed detectors enables the development of reliable silicon detectors to be used in controlling the low and high radiation levels encountered in a lot of application

Development of Multi-Scale Finite Element Analysis Codes for High Formability Sheet Metal Generation

International Nuclear Information System (INIS)

Nnakamachi, Eiji; Kuramae, Hiroyuki; Ngoc Tam, Nguyen; Nakamura, Yasunori; Sakamoto, Hidetoshi; Morimoto, Hideo

2007-01-01

In this study, the dynamic- and static-explicit multi-scale finite element (F.E.) codes are developed by employing the homogenization method, the crystalplasticity constitutive equation and SEM-EBSD measurement based polycrystal model. These can predict the crystal morphological change and the hardening evolution at the micro level, and the macroscopic plastic anisotropy evolution. These codes are applied to analyze the asymmetrical rolling process, which is introduced to control the crystal texture of the sheet metal for generating a high formability sheet metal. These codes can predict the yield surface and the sheet formability by analyzing the strain path dependent yield, the simple sheet forming process, such as the limit dome height test and the cylindrical deep drawing problems. It shows that the shear dominant rolling process, such as the asymmetric rolling, generates ''high formability'' textures and eventually the high formability sheet. The texture evolution and the high formability of the newly generated sheet metal experimentally were confirmed by the SEM-EBSD measurement and LDH test. It is concluded that these explicit type crystallographic homogenized multi-scale F.E. code could be a comprehensive tool to predict the plastic induced texture evolution, anisotropy and formability by the rolling process and the limit dome height test analyses

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

High-strength high-conductivity Cu-Nb microcomposite sheet fabricated via multiple roll bonding

International Nuclear Information System (INIS)

Jha, S.C.; Delagi, R.G.; Forster, J.A.; Krotz, P.D.

1993-01-01

Copper-niobium microcomposites are a new class of high-strength high-conductivity materials that have attractive properties for room- and elevated-temperature applications. Since Nb has little solid solubility in Cu, addition of Nb to Cu does not affect its conductivity. Copper-niobium microcomposites are melted and cast so that the microstructure of cast Cu-Nb ingots consists of 1- to 10 μm Nb dendrites uniformly distributed within the copper matrix. Extensive wire drawing with a true processing strain (η> 12) of Cu-Nb alloy leads to refinement and elongation of Nb dendrites into 1- to 10 nm-thick filaments. The presence of such fine Nb filaments causes a significant increase in the strength of Cu-Nb wires. The tensile strength of heavily drawn Cu-Nb wires was determined to be significantly higher than the values predicted by the rule of mixtures. This article reports the fabrication of high-strength Cu-Nb microcomposite sheet by multiple roll bonding. It is difficult and impractical to attain high processing strains (η>3) by simple cold rolling. In most practical cold-rolling operation, the thickness reduction does not exceed 90 pct (η ≅2). Therefore, innovative processing is required to generate high strength in Cu-Nb microcomposite sheet. Multiple roll bonding of Cu-Nb has been utilized to store high processing strain ( η>10) in the material and refine the Nb particle size within the copper matrix. This article describes the microstructure, mechanical properties, and thermal stability of roll-bonded Cu-Nb microcomposite sheet

Toward 3D Printing of Medical Implants: Reduced Lateral Droplet Spreading of Silicone Rubber under Intense IR Curing.

Science.gov (United States)

Stieghorst, Jan; Majaura, Daniel; Wevering, Hendrik; Doll, Theodor

2016-03-01

The direct fabrication of silicone-rubber-based individually shaped active neural implants requires high-speed-curing systems in order to prevent extensive spreading of the viscous silicone rubber materials during vulcanization. Therefore, an infrared-laser-based test setup was developed to cure the silicone rubber materials rapidly and to evaluate the resulting spreading in relation to its initial viscosity, the absorbed infrared radiation, and the surface tensions of the fabrication bed's material. Different low-adhesion materials (polyimide, Parylene-C, polytetrafluoroethylene, and fluorinated ethylenepropylene) were used as bed materials to reduce the spreading of the silicone rubber materials by means of their well-known weak surface tensions. Further, O2-plasma treatment was performed on the bed materials to reduce the surface tensions. To calculate the absorbed radiation, the emittance of the laser was measured, and the absorptances of the materials were investigated with Fourier transform infrared spectroscopy in attenuated total reflection mode. A minimum silicone rubber spreading of 3.24% was achieved after 2 s curing time, indicating the potential usability of the presented high-speed-curing process for the direct fabrication of thermal-curing silicone rubbers.

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

International Nuclear Information System (INIS)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios; Shervin, Shahab

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400–600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3–6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude–Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ∼0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor. (paper)

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

Science.gov (United States)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

High-speed volume measurement system

Energy Technology Data Exchange (ETDEWEB)

Lane, Michael H.; Doyle, Jr., James L.; Brinkman, Michael J.

2018-01-30

Disclosed is a volume sensor having a first axis, a second axis, and a third axis, each axis including a laser source configured to emit a beam; a parallel beam generating assembly configured to receive the beam and split the beam into a first parallel beam and a second parallel beam, a beam-collimating assembly configured to receive the first parallel beam and the second parallel beam and output a first beam sheet and a second beam sheet, the first beam sheet and the second beam sheet being configured to traverse the object aperture; a first collecting lens and a second collecting lens; and a first photodetector and a second photodetector, the first photodetector and the second photodetector configured to output an electrical signal proportional to the object; wherein the first axis, the second axis, and the third axis are arranged at an angular offset with respect to each other.

A High-Speed Design of Montgomery Multiplier

Science.gov (United States)

Fan, Yibo; Ikenaga, Takeshi; Goto, Satoshi

With the increase of key length used in public cryptographic algorithms such as RSA and ECC, the speed of Montgomery multiplication becomes a bottleneck. This paper proposes a high speed design of Montgomery multiplier. Firstly, a modified scalable high-radix Montgomery algorithm is proposed to reduce critical path. Secondly, a high-radix clock-saving dataflow is proposed to support high-radix operation and one clock cycle delay in dataflow. Finally, a hardware-reused architecture is proposed to reduce the hardware cost and a parallel radix-16 design of data path is proposed to accelerate the speed. By using HHNEC 0.25μm standard cell library, the implementation results show that the total cost of Montgomery multiplier is 130 KGates, the clock frequency is 180MHz and the throughput of 1024-bit RSA encryption is 352kbps. This design is suitable to be used in high speed RSA or ECC encryption/decryption. As a scalable design, it supports any key-length encryption/decryption up to the size of on-chip memory.

Effects of debonds and face sheet damage in GRP sandwich panels in naval ships

DEFF Research Database (Denmark)

Hayman, B.; Berggreen, Christian; Quispitupa, Amilcar

2009-01-01

Sandwich construction with face sheets of fibre-reinforced plastics (FRP) and a core of polymer foam or balsa wood offer a lightweight construction that is well suited to naval and other vessels for high-speed operation or where payload considerations require that the structural weight be minimised...

Functionalization of 2D macroporous silicon under the high-pressure oxidation

Science.gov (United States)

Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

2018-03-01

Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

Online readout and control unit for high-speed/high resolution readout of silicon tracking detectors

International Nuclear Information System (INIS)

Buerger, J.; Hansen, K.; Lange, W.; Nowak, T.; Prell, S.; Zimmermann, W.

1997-01-01

We are describing a high speed VME readout and control module developed and presently working at the H1 experiment at DESY in Hamburg. It has the capability to read out 4 x 2048 analogue data channels at sampling rates up to 10 MHz with a dynamic input range of 1 V. The nominal resolution of the A/D converters can be adjusted between 8 and 12 bit. At the latter resolution we obtain signal-to-noise ratio better than 61.4 dB at a conversion rate of 5 MSps. At this data rate all 8192 detector channels can be read out to the internal raw data memory and VME interface within about 410 μs and 510 μs, respectively. The pedestal subtracted signals can be analyzed on-line. At a raw data hit occupation of 10%, the VME readout time is 50 μs per module. Each module provides four complementary CMOS signals to control the front-end electronics and four independent sets of power supplies for analogue and digital voltages (10 V, 100 mA) to drive the front-end electronics and for the bias voltage (100 V, 1.2 mA) to assure the full functionality of the detectors and the readout. (orig.)

Online readout and control unit for high-speed/high resolution readout of silicon tracking detectors

Science.gov (United States)

Bürger, J.; Hansen, K.; Lange, W.; Nowak, T.; Prell, S.; Zimmermann, W.

1997-02-01

We are describing a high speed VME readout and control module developed and presently working at the H1 experiment at DESY in Hamburg. It has the capability to read out 4 × 2048 analogue data channels at sampling rates up to 10 MHz with a dynamic input range of 1 V. The nominal resolution of the A/D converters can be adjusted between 8 and 12 bit. At the latter resolution we obtain signal-to-noise ratio better than 61.4 dB at a conversion rate of 5 MSps. At this data rate all 8192 detector channels can be read out to the internal raw data memory and VME interface within about 410 μs and 510 μs, respectively. The pedestal subtracted signals can be analyzed on-line. At a raw data hit occupation of 10%, the VME readout time is 50 μs per module. Each module provides four complementary CMOS signals to control the front-end electronics and four independent sets of power supplies for analogue and digital voltages (10 V, 100 mA) to drive the front-end electronics and for the bias voltage (100 V, 1.2 mA) to assure the full functionality of the detectors and the readout.

Online readout and control unit for high-speed / high resolution readout of silicon tracking detectors

International Nuclear Information System (INIS)

Buerger, J.; Hansen, K.; Lange, W.; Nowak, T.; Prell, S.; Zimmermann, W.

1996-09-01

We are describing a high speed VME readout and control module developed and presently working at the H1 experiment at DESY in Hamburg. It has the capability to read out 4 x 2048 analogue data channels at sampling rates up to 10 MHz with a dynamic input range of 1 V. The nominal resolution of the A/D converters can be adjusted between 8 and 12 bit. At the latter resolution we obtain signal-to-noise ratio better than 61.4 dB at a conversion rate of 5 MSps. At this data rate all 8192 detector channels can be read out to the internal raw data memory and VME interface within about 410 μs and 510 μs, respectively. The pedestal subtracted signals can be analyzed on-line. At a raw data hit occupation of 10%, the VME readout time is 50 μs per module. Each module provides four complementary CMOS signals to control the front-end electronics and four independent sets of power supplies for analogue and digital voltages (10 V, 100 mA) to drive the front-end electronics and for the bias voltage (100 V, 1.2 mA) to assure the full functionality of the detectors and the readout. (orig.)

High-speed and high-fidelity system and method for collecting network traffic

Science.gov (United States)

Weigle, Eric H [Los Alamos, NM

2010-08-24

A system is provided for the high-speed and high-fidelity collection of network traffic. The system can collect traffic at gigabit-per-second (Gbps) speeds, scale to terabit-per-second (Tbps) speeds, and support additional functions such as real-time network intrusion detection. The present system uses a dedicated operating system for traffic collection to maximize efficiency, scalability, and performance. A scalable infrastructure and apparatus for the present system is provided by splitting the work performed on one host onto multiple hosts. The present system simultaneously addresses the issues of scalability, performance, cost, and adaptability with respect to network monitoring, collection, and other network tasks. In addition to high-speed and high-fidelity network collection, the present system provides a flexible infrastructure to perform virtually any function at high speeds such as real-time network intrusion detection and wide-area network emulation for research purposes.

Improving process performance in Incremental Sheet Forming (ISF)

International Nuclear Information System (INIS)

Ambrogio, G.; Filice, L.; Manco, G. L.

2011-01-01

Incremental Sheet Forming (ISF) is a relatively new process in which a sheet clamped along the borders is progressively deformed through a hemispherical tool. The tool motion is CNC controlled and the path is designed using a CAD-CAM approach, with the aim to reproduce the final shape contour such as in the surface milling. The absence of a dedicated setup and the related high flexibility is the main point of strength and the reason why several researchers focused their attentions on the ISF process.On the other hand the process slowness is the most relevant drawback which reduces a wider industrial application. In the paper, a first attempt to overcome this process limitation is presented taking into account a relevant speed increasing respect to the values currently used.

Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

Science.gov (United States)

Zoutendyk, J. A.

1976-01-01

Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

Science.gov (United States)

Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

2015-02-07

Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

Potential scenarios of concern for high speed rail operations

Science.gov (United States)

2011-03-16

Currently, multiple operating authorities are proposing the : introduction of high-speed rail service in the United States. : While high-speed rail service shares a number of basic : principles with conventional-speed rail service, the operational : ...

Benchmark Testing of the Largest Titanium Aluminide Sheet Subelement Conducted

Science.gov (United States)

Bartolotta, Paul A.; Krause, David L.

2000-01-01

To evaluate wrought titanium aluminide (gamma TiAl) as a viable candidate material for the High-Speed Civil Transport (HSCT) exhaust nozzle, an international team led by the NASA Glenn Research Center at Lewis Field successfully fabricated and tested the largest gamma TiAl sheet structure ever manufactured. The gamma TiAl sheet structure, a 56-percent subscale divergent flap subelement, was fabricated for benchmark testing in three-point bending. Overall, the subelement was 84-cm (33-in.) long by 13-cm (5-in.) wide by 8-cm (3-in.) deep. Incorporated into the subelement were features that might be used in the fabrication of a full-scale divergent flap. These features include the use of: (1) gamma TiAl shear clips to join together sections of corrugations, (2) multiple gamma TiAl face sheets, (3) double hot-formed gamma TiAl corrugations, and (4) brazed joints. The structural integrity of the gamma TiAl sheet subelement was evaluated by conducting a room-temperature three-point static bend test.

Initial rigid response and softening transition of highly stretchable kirigami sheet materials.

Science.gov (United States)

Isobe, Midori; Okumura, Ko

2016-04-27

We study, experimentally and theoretically, the mechanical response of sheet materials on which line cracks or cuts are arranged in a simple pattern. Such sheet materials, often called kirigami (the Japanese words, kiri and gami, stand for cut and paper, respectively), demonstrate a unique mechanical response promising for various engineering applications such as stretchable batteries: kirigami sheets possess a mechanical regime in which sheets are highly stretchable and very soft compared with the original sheets without line cracks, by virtue of out-of-plane deformation. However, this regime starts after a transition from an initial stiff regime governed by in-plane deformation. In other words, the softness of the kirigami structure emerges as a result of a transition from the two-dimensional to three-dimensional deformation, i.e., from stretching to bending. We clarify the physical origins of the transition and mechanical regimes, which are revealed to be governed by simple scaling laws. The results could be useful for controlling and designing the mechanical response of sheet materials including cell sheets for medical regeneration and relevant to the development of materials with tunable stiffness and mechanical force sensors.

3D silicone rubber interfaces for individually tailored implants.

Science.gov (United States)

Stieghorst, Jan; Bondarenkova, Alexandra; Burblies, Niklas; Behrens, Peter; Doll, Theodor

2015-01-01

For the fabrication of customized silicone rubber based implants, e.g. cochlear implants or electrocortical grid arrays, it is required to develop high speed curing systems, which vulcanize the silicone rubber before it runs due to a heating related viscosity drop. Therefore, we present an infrared radiation based cross-linking approach for the 3D-printing of silicone rubber bulk and carbon nanotube based silicone rubber electrode materials. Composite materials were cured in less than 120 s and material interfaces were evaluated with scanning electron microscopy. Furthermore, curing related changes in the mechanical and cell-biological behaviour were investigated with tensile and WST-1 cell biocompatibility tests. The infrared absorption properties of the silicone rubber materials were analysed with fourier transform infrared spectroscopy in transmission and attenuated total reflection mode. The heat flux was calculated by using the FTIR data, emissivity data from the infrared source manufacturer and the geometrical view factor of the system.

Towards a fully integrated indium-phosphide membrane on silicon photonics platform

NARCIS (Netherlands)

van Engelen, J.P.; Pogoretskiy, V.; Smit, M.K.; van der Tol, J.J.G.M.; Jiao, Y.

2017-01-01

Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight

Light-Weight Free-Standing Carbon Nanotube-Silicon Films for Anodes of Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng

2010-07-27

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced concrete, where the infiltrated CNT network functions as both mechanical support and electrical conductor and Si as a high capacity anode material for Li-ion battery. Such free-standing film has a low sheet resistance of ∼30 Ohm/sq. It shows a high specific charge storage capacity (∼2000 mAh/g) and a good cycling life, superior to pure sputtered-on silicon films with similar thicknesses. Scanning electron micrographs show that Si is still connected by the CNT network even when small breaking or cracks appear in the film after cycling. The film can also "ripple up" to release the strain of a large volume change during lithium intercalation. The conductive composite film can function as both anode active material and current collector. It offers ∼10 times improvement in specific capacity compared with widely used graphite/copper anode sheets. © 2010 American Chemical Society.

Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

Science.gov (United States)

Zhang, Zhiwei; Chen, Pei; Qin, Fei; An, Tong; Yu, Huiping

2018-05-01

Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD) layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young's modulus, ultimate tensile strength (UTS), and strain at fracture is observed.

Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

Directory of Open Access Journals (Sweden)

Zhiwei Zhang

2018-05-01

Full Text Available Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young’s modulus, ultimate tensile strength (UTS, and strain at fracture is observed.

High-Speed Non-Volatile Optical Memory: Achievements and Challenges

Directory of Open Access Journals (Sweden)

Vadym Zayets

2017-01-01

Full Text Available We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed.

Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

International Nuclear Information System (INIS)

Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

2015-01-01

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Radiation hardened high efficiency silicon space solar cell

International Nuclear Information System (INIS)

Garboushian, V.; Yoon, S.; Turner, J.

1993-01-01

A silicon solar cell with AMO 19% Beginning of Life (BOL) efficiency is reported. The cell has demonstrated equal or better radiation resistance when compared to conventional silicon space solar cells. Conventional silicon space solar cell performance is generally ∼ 14% at BOL. The Radiation Hardened High Efficiency Silicon (RHHES) cell is thinned for high specific power (watts/kilogram). The RHHES space cell provides compatibility with automatic surface mounting technology. The cells can be easily combined to provide desired power levels and voltages. The RHHES space cell is more resistant to mechanical damage due to micrometeorites. Micro-meteorites which impinge upon conventional cells can crack the cell which, in turn, may cause string failure. The RHHES, operating in the same environment, can continue to function with a similar crack. The RHHES cell allows for very efficient thermal management which is essential for space cells generating higher specific power levels. The cell eliminates the need for electrical insulation layers which would otherwise increase the thermal resistance for conventional space panels. The RHHES cell can be applied to a space concentrator panel system without abandoning any of the attributes discussed. The power handling capability of the RHHES cell is approximately five times more than conventional space concentrator solar cells

A Historical Review of High Speed Metal Forming

OpenAIRE

Zittel, G.

2010-01-01

This paper will present a Historical Review of High Speed Metal Forming beginning with the first thought of forming metal by using an electromagnetic impulse to today, whereby High Speed Metal Forming is an accepted production process. Although this paper will briefly cover the basic physics of the process, it will not dwell on it. It will rather show how the industrial acceptance of High Speed Metal Forming is tightly connected to the knowledge acquired from many applications studies. These ...

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer.

Science.gov (United States)

Liu, Jinzhang; Motta, Nunzio; Lee, Soonil

2012-01-01

ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse.

Metallurgy of high-silicon steel parts produced using Selective Laser Melting

International Nuclear Information System (INIS)

Garibaldi, Michele; Ashcroft, Ian; Simonelli, Marco; Hague, Richard

2016-01-01

The metallurgy of high-silicon steel (6.9%wt.Si) processed using Selective Laser Melting (SLM) is presented for the first time in this study. High-silicon steel has great potential as a soft magnetic alloy, but its employment has been limited due to its poor workability. The effect of SLM-processing on the metallurgy of the alloy is investigated in this work using microscopy, X-Ray Diffraction (XRD) and Electron Backscatter Diffraction (EBSD). XRD analysis suggests that the SLM high-silicon steel is a single ferritic phase (solid solution), with no sign of phase ordering. This is expected to have beneficial effects on the material properties, since ordering has been shown to make silicon steels more brittle and electrically conductive. For near-fully dense samples, columnar grains with a high aspect ratio and oriented along the build direction are found. Most importantly, a <001> fibre-texture along the build direction can be changed into a cube-texture when the qualitative shape of the melt-pool is altered (from shallow to deep) by increasing the energy input of the scanning laser. This feature could potentially open the path to the manufacture of three-dimensional grain-oriented high-silicon steels for electromechanical applications.

Amorphous silicon as high index photonic material

Science.gov (United States)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

Process research of non-CZ silicon material

Science.gov (United States)

Campbell, R. B.

1984-01-01

Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

High-speed photography. Technique and evolution

International Nuclear Information System (INIS)

Sanchez-Tembleque, R.

1981-01-01

It is intended to present some general considerations about ''Higg-speed photography'' as a tool of work common in mos research laboratories in the world. ''High-speed photography'' relies on the principles of photography of actions, that change rapidly with the time. The evolution of this technique goes along with the discovering of new phenomena in wich higher speeds are involved. At present is normal to deal with changing rates involving picoseconds times (10 -12 s) and new developments on the field of femtosecond (10 -15 s) theoretically are contemplated. (author)

Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

DEFF Research Database (Denmark)

Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

2010-01-01

A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

Development of High Efficiency Four-Terminal Perovskite-Silicon Tandems

Science.gov (United States)

Duong, The Duc

This thesis is concerned with the development of high efficiency four-terminal perovskite-silicon tandem solar cells with the potential to reduce the cost of solar energy. The work focuses on perovskite top cells and can be divided into three main parts: developing low parasitic absorption and efficient semi-transparent perovskite cells, doping perovskite materials with rubidium, and optimizing perovskite material's bandgap with quadruple-cation and mixed-halide. A further section investigates the light stability of optimized bandgap perovskite cells. In a four-terminal mechanically stacked tandem, the perovskite top cell requires two transparent contacts at both the front and rear sides. Through detailed optical and electrical power loss analysis of the tandem efficiency due to non-ideal properties of the two transparent contacts, optimal contact parameters in term of sheet resistance and transparency are identified. Indium doped tin oxide by sputtering is used for both two transparent contacts and their deposition parameters are optimized separately. The semi-transparent perovskite cell using MAPbI3 has an efficiency of more than 12% with less than 12% parasitic absorption and up to 80% transparency in the long wavelength region. Using a textured foil as anti-reflection coating, an outstanding average transparency of 84% in the long wavelength is obtained. The low parasitic absorption allows an opaque version of the semi-transparent perovskite cell to operate efficiently in a filterless spectrum splitting perovskite-silicon tandem configuration. To further enhance the performance of perovskite cells, it is essential to improve the quality of perovskite films. This can be achieved with mixed-perovskite FAPbI3/MAPbBr3. However, mixed-perovskite films normally contain small a small amount of a non-perovskite phase, which is detrimental for the cell performance. Rb-doping is found to eliminate the formation of the non-perovskite phase and enhance the crystallinity of

Review of High-Speed Fiber Optic Grating Sensors Systems

Energy Technology Data Exchange (ETDEWEB)

Udd, E; Benterou, J; May, C; Mihailov, S J; Lu, P

2010-03-24

Fiber grating sensors can be used to support a wide variety of high speed measurement applications. This includes measurements of vibrations on bridges, traffic monitoring on freeways, ultrasonic detection to support non-destructive tests on metal plates and providing details of detonation events. This paper provides a brief overview of some of the techniques that have been used to support high speed measurements using fiber grating sensors over frequency ranges from 10s of kHz, to MHZ and finally toward frequencies approaching the GHz regime. Very early in the development of fiber grating sensor systems it was realized that a high speed fiber grating sensor system could be realized by placing an optical filter that might be a fiber grating in front of a detector so that spectral changes in the reflection from a fiber grating were amplitude modulated. In principal the only limitation on this type of system involved the speed of the output detector which with the development of high speed communication links moved from the regime of 10s of MHz toward 10s of GHz. The earliest deployed systems involved civil structures including measurements of the strain fields on composite utility poles and missile bodies during break tests, bridges and freeways. This was followed by a series of developments that included high speed fiber grating sensors to support nondestructive testing via ultrasonic wave detection, high speed machining and monitoring ship hulls. Each of these applications involved monitoring mechanical motion of structures and thus interest was in speeds up to a few 10s of MHz. Most recently there has been interest in using fiber grating to monitor the very high speed events such as detonations and this has led to utilization of fiber gratings that are consumed during an event that may require detection speeds of hundreds of MHz and in the future multiple GHz.

Optimal swimming of a sheet.

Science.gov (United States)

Montenegro-Johnson, Thomas D; Lauga, Eric

2014-06-01

Propulsion at microscopic scales is often achieved through propagating traveling waves along hairlike organelles called flagella. Taylor's two-dimensional swimming sheet model is frequently used to provide insight into problems of flagellar propulsion. We derive numerically the large-amplitude wave form of the two-dimensional swimming sheet that yields optimum hydrodynamic efficiency: the ratio of the squared swimming speed to the rate-of-working of the sheet against the fluid. Using the boundary element method, we show that the optimal wave form is a front-back symmetric regularized cusp that is 25% more efficient than the optimal sine wave. This optimal two-dimensional shape is smooth, qualitatively different from the kinked form of Lighthill's optimal three-dimensional flagellum, not predicted by small-amplitude theory, and different from the smooth circular-arc-like shape of active elastic filaments.

High-Speed Videography Instrumentation And Procedures

Science.gov (United States)

Miller, C. E.

1982-02-01

High-speed videography has been an electronic analog of low-speed film cameras, but having the advantages of instant-replay and simplicity of operation. Recent advances have pushed frame-rates into the realm of the rotating prism camera. Some characteristics of videography systems are discussed in conjunction with applications in sports analysis, and with sports equipment testing.

Magneto-hydrodynamics of coupled fluid–sheet interface with mass suction and blowing

International Nuclear Information System (INIS)

Ahmad, R.

2016-01-01

There are large number of studies which prescribe the kinematics of the sheet and ignore the sheet's mechanics. However, the current boundary layer analysis investigates the mechanics of both the electrically conducting fluid and a permeable sheet, which makes it distinct from the other studies in the literature. One of the objectives of the current study is to (i) examine the behaviour of magnetic field effect for both the surface and the electrically conducting fluid (ii) investigate the heat and mass transfer between a permeable sheet and the surrounding electrically conducting fluid across the hydro, thermal and mass boundary layers. Self-similar solutions are obtained by considering the RK45 technique. Analytical solution is also found for the stretching sheet case. The skin friction dual solutions are presented for various types of sheet. The influence of pertinent parameters on the dimensionless velocity, shear stress, temperature, mass concentration, heat and mass transfer rates on the fluid–sheet interface is presented graphically as well as numerically. The obtained results are of potential benefit for studying the electrically conducting flow over various soft surfaces such as synthetic plastics, soft silicone sheet and soft synthetic rubber sheet. These surfaces are easily deformed by thermal fluctuations or thermal stresses. - Highlights: • The momentum equation is modelled for both the surrounding MHD fluid and the sheet with the effects of mass suction and blowing. • The current study further investigates the heat and mass transfer characteristics between a permeable sheet and the surrounding electrically conducting fluid across the thermal and mass boundary layers. • Both the approximated and analytical techniques have been included for the purpose of comparison, and the perfect numerical agreements have been established with the previous studies. • Dual solutions for the skin friction coefficients are found for various categories of

Optimized optical devices for edge-coupling-enabled silicon photonics platform

Science.gov (United States)

Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

2018-02-01

We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

Integrated computer network high-speed parallel interface

International Nuclear Information System (INIS)

Frank, R.B.

1979-03-01

As the number and variety of computers within Los Alamos Scientific Laboratory's Central Computer Facility grows, the need for a standard, high-speed intercomputer interface has become more apparent. This report details the development of a High-Speed Parallel Interface from conceptual through implementation stages to meet current and future needs for large-scle network computing within the Integrated Computer Network. 4 figures

High-speed and intercity passenger rail testing strategy.

Science.gov (United States)

2013-05-01

This high-speed and intercity passenger rail (HSIPR) testing strategy addresses the requirements for testing of high-speed train sets and technology before introduction to the North American railroad system. The report documents the results of a surv...

Application of high-speed photography to hydrodynamic instability research

International Nuclear Information System (INIS)

Chang Lihua; Li Zuoyou; Xiao Zhengfei; Zou Liyong; Liu Jinhong; Xiong Xueshi

2012-01-01

High-speed photography is used to study the Rayleigh-Taylor instability of air-water interface driven by high- pressure exploding gas. Clear images illustrating the instability are obtained, along with the air bubble peak speed and turbulent mixing speed. The RM (Richtmyer-Meshkov) instability of air/SF 6 interface driven by shock wave is also researched by using high-speed Schlieren technique on the horizontal shock tube and primary experimental results are obtained, which show the change of the turbulent mixing region clearly. (authors)

Development of high-speed video cameras

Science.gov (United States)

Etoh, Takeharu G.; Takehara, Kohsei; Okinaka, Tomoo; Takano, Yasuhide; Ruckelshausen, Arno; Poggemann, Dirk

2001-04-01

Presented in this paper is an outline of the R and D activities on high-speed video cameras, which have been done in Kinki University since more than ten years ago, and are currently proceeded as an international cooperative project with University of Applied Sciences Osnabruck and other organizations. Extensive marketing researches have been done, (1) on user's requirements on high-speed multi-framing and video cameras by questionnaires and hearings, and (2) on current availability of the cameras of this sort by search of journals and websites. Both of them support necessity of development of a high-speed video camera of more than 1 million fps. A video camera of 4,500 fps with parallel readout was developed in 1991. A video camera with triple sensors was developed in 1996. The sensor is the same one as developed for the previous camera. The frame rate is 50 million fps for triple-framing and 4,500 fps for triple-light-wave framing, including color image capturing. Idea on a video camera of 1 million fps with an ISIS, In-situ Storage Image Sensor, was proposed in 1993 at first, and has been continuously improved. A test sensor was developed in early 2000, and successfully captured images at 62,500 fps. Currently, design of a prototype ISIS is going on, and, hopefully, will be fabricated in near future. Epoch-making cameras in history of development of high-speed video cameras by other persons are also briefly reviewed.

Porous silicon structures with high surface area/specific pore size

Science.gov (United States)

Northrup, M.A.; Yu, C.M.; Raley, N.F.

1999-03-16

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gases in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters. 9 figs.

High-speed AFM of human chromosomes in liquid

Energy Technology Data Exchange (ETDEWEB)

Picco, L M; Dunton, P G; Ulcinas, A; Engledew, D J; Miles, M J [H H Wills Physics Laboratory and IRC in Nanotechnology, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Hoshi, O; Ushiki, T [Division of Microscopic Anatomy and Bio-Imaging, Department of Cellular Function, Niigata University Graduate School of Medical and Dental Sciences, Asahimachi-Dori 1, Niigata, 951-8150 (Japan)], E-mail: m.j.miles@bristol.ac.uk

2008-09-24

Further developments of the previously reported high-speed contact-mode AFM are described. The technique is applied to the imaging of human chromosomes at video rate both in air and in water. These are the largest structures to have been imaged with high-speed AFM and the first imaging in liquid to be reported. A possible mechanism that allows such high-speed contact-mode imaging without significant damage to the sample is discussed in the context of the velocity dependence of the measured lateral force on the AFM tip.

Characterizing speed-independence of high-level designs

DEFF Research Database (Denmark)

Kishinevsky, Michael; Staunstrup, Jørgen

1994-01-01

This paper characterizes the speed-independence of high-level designs. The characterization is a condition on the design description ensuring that the behavior of the design is independent of the speeds of its components. The behavior of a circuit is modeled as a transition system, that allows data...... types, and internal as well as external non-determinism. This makes it possible to verify the speed-independence of a design without providing an explicit realization of the environment. The verification can be done mechanically. A number of experimental designs have been verified including a speed-independent...

Development of ultra high speed photographic system using high repetition rate visible laser

International Nuclear Information System (INIS)

Lee, Jong Min; Cha, Byung Hun; Kim, Sung Ho; Kim, Jung Bog; Lim, Chang Hwan; Cha, Hyung Ki; Song, Kyu Seok; Lee, Byung Deok; Rhi, Jong Hoon; Baik, Dae Hyun; Han, Jae Min; Rho, Si Pyo; Lee, Byung Cheol; Jeong, Do Yung; Choi, An Seong; Jeong, Chan Ik; Park, Dae Ung; Jeong, Sung Min; Lee, Sang Kil; Kim, Heon Jun; Jang, Rae gak; Jo, Do Hun; Park, Min Young

1992-12-01

The goal of this project is to develop and commercialize a high speed photographic system equipped with a high repetition rate visible laser. The developed system provides the characteristics of high time resolution and large number of frames. The system consists of 10 W air cooled CVL or a 30 W water cooled CVL, a rotating drum-type high speed camera with the framing rate of 35,000 fps, and a automatic control device. The system has the performance of 10 nsec time resolution, 35,000 fps framing rate, and 250 picture frames. The high speed photographic systems are widely applied to the fields such as high-efficient engine development, high-speed vibration analysis, shock wave propagation study, flow visualization analysis, weapon development, etc. (Author)

Advanced Sulfur Cathode Enabled by Highly Crumpled Nitrogen-Doped Graphene Sheets for High-Energy-Density Lithium-Sulfur Batteries.

Science.gov (United States)

Song, Jiangxuan; Yu, Zhaoxin; Gordin, Mikhail L; Wang, Donghai

2016-02-10

Herein, we report a synthesis of highly crumpled nitrogen-doped graphene sheets with ultrahigh pore volume (5.4 cm(3)/g) via a simple thermally induced expansion strategy in absence of any templates. The wrinkled graphene sheets are interwoven rather than stacked, enabling rich nitrogen-containing active sites. Benefiting from the unique pore structure and nitrogen-doping induced strong polysulfide adsorption ability, lithium-sulfur battery cells using these wrinkled graphene sheets as both sulfur host and interlayer achieved a high capacity of ∼1000 mAh/g and exceptional cycling stability even at high sulfur content (≥80 wt %) and sulfur loading (5 mg sulfur/cm(2)). The high specific capacity together with the high sulfur loading push the areal capacity of sulfur cathodes to ∼5 mAh/cm(2), which is outstanding compared to other recently developed sulfur cathodes and ideal for practical applications.

Muon Excess at Sea Level during the Progress of a Geomagnetic Storm and High-Speed Stream Impact Near the Time of Earth's Heliospheric Sheet Crossing

Science.gov (United States)

Augusto, C. R. A.; Navia, C. E.; de Oliveira, M. N.; Nepomuceno, A. A.; Kopenkin, V.; Sinzi, T.

2017-08-01

In this article we present results of studying the association between the muon flux variation at ground level, registered by the New-Tupi muon telescopes (22° 53'00'' S, 43° 06'13' W; 3 m above sea level), and the geomagnetic storm on 25 - 29 August 2015 that has raged for several days as a result of a coronal mass ejection (CME) impact on Earth's magnetosphere. A sequence of events started with an M3.5 X-ray class flare on 22 August 2015 at 21:19 UTC. The New-Tupi muon telescopes observed a Forbush decrease (FD) triggered by this geomagnetic storm, which began on 26 August 2015. After Earth crossed the heliospheric current sheet (HCS), an increase in particle flux was observed on 28 August 2015 by spacecraft and ground-level detectors. The observed peak was in temporal coincidence with the impact of a high-speed stream (HSS). We study this increase, which has been observed with a significance above 1.5% by ground-level detectors in different rigidity regimes. We also estimate the lower limit of the energy fluence injected on Earth. In addition, we consider the origin of this increase, such as acceleration of particles by shock waves at the front of the HSS and the focusing effect of the HCS crossing. Our results show possible evidence of a prolonged energetic (up to GeV energies) particle injection within the Earth atmosphere system, driven by the HSS. In most cases, these injected particles are directed to the polar regions. However, the particles from the high-energy tail of the spectrum can reach mid-latitudes, and this could have consequences for the atmospheric chemistry. For instance, the creation of NOx species may be enhanced, and this can lead to increased ozone depletion. This topic requires further study.

Electro-optical logic gates based on graphene-silicon waveguides

Science.gov (United States)

Chen, Weiwei; Yang, Longzhi; Wang, Pengjun; Zhang, Yawei; Zhou, Liqiang; Yang, Tianjun; Wang, Yang; Yang, Jianyi

2016-08-01

In this paper, designs of electro-optical AND/NAND, OR/ NOR, XOR/XNOR logic gates based on cascaded silicon graphene switches and regular 2×1 multimode interference combiners are presented. Each switch consists of a Mach-Zehnder interferometer in which silicon slot waveguides embedded with graphene flakes are designed for phase shifters. High-speed switching function is achieved by applying an electrical signal to tune the Fermi levels of graphene flakes causing the variation of modal effective index. Calculation results show the crosstalk in the proposed optical switch is lower than -22.9 dB within a bandwidth from 1510 nm to 1600 nm. The designed six electro-optical logic gates with the operation speed of 10 Gbit/s have a minimum extinction ratio of 35.6 dB and a maximum insertion loss of 0.21 dB for transverse electric modes at 1.55 μm.

Synthesis of high-quality mesoporous silicon particles for enhanced lithium storage performance

Energy Technology Data Exchange (ETDEWEB)

Wang, Chundong, E-mail: apcdwang@hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Ren, Jianguo [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Chen, Hao [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Yi [School of Chemical Engineering and Pharmacy, Wuhan Institute of Technology, Wuhan, 430073 (China); Ostrikov, Kostya [School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane 4000, QLD (Australia); Manufacturing Flagship, CSIRO, P. O. Box 218, Lindfield, NSW 2070 (Australia); Zhang, Wenjun [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China)

2016-04-15

Silicon has been considered as one of the most promising anode materials for high-capacity lithium-ion batteries (LIBs) due to its ultrahigh theoretical capacity, abundance, and environmentally benign nature. Nonetheless, the severe break during the prolonged cycling results in poor electrochemical performance, which hinders its practical application. Herein, we report the synthesis of novel mesoporous silicon particles with a facile template method by using a magnesiothermic reduction for LIBs. The obtained silicon nanoparticles are highly porous with densely porous cavities (20–40 nm) on the wall, of which it presents good crystallization. Electrochemical measurements showed that the mesoporous silicon nanoparticles delivered a high reversible specific capacity of 910 mA h g{sup −1} at a high current density of 1200 mA g{sup −1} over 50 cycles. The specific capacity at such high current density is still over twofold than that of commercial graphite anode, suggesting that the nanoporous Si architectures is suitable for high-performance Si-based anodes for lithium ion batteries in terms of capacity, cycle life, and rate capacity. - Highlights: • Silica nanotubes were prepared with a facile template method. • Novel mesoporous silicon particles were obtained by magnesiothermic reduction. • High-Performance LIBs were achieved by using mesoporous Si particle Electrodes.

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2005-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2004-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

Minimum Plate Thickness in High-Speed Craft

DEFF Research Database (Denmark)

Pedersen, Preben Terndrup; Zhang, Shengming

1998-01-01

The minimum plate thickness requirements specified by the classification societies for high-speed craft are supposed to ensure adequate resistance to impact loads such as collision with floating objects and objects falling on the deck. The paper presents analytical methods of describing such impact...... phenomena and proposes performance requirements instead of thickness requirements for hull panels in high-speed craft made of different building materials....

The large scale and long term evolution of the solar wind speed distribution and high speed streams

International Nuclear Information System (INIS)

Intriligator, D.S.

1977-01-01

The spatial and temporal evolution of the solar wind speed distribution and of high speed streams in the solar wind are examined. Comparisons of the solar wind streaming speeds measured at Earth, Pioneer 11, and Pioneer 10 indicate that between 1 AU and 6.4 AU the solar wind speed distributions are narrower (i.e. the 95% value minus the 5% value of the solar wind streaming speed is less) at extended heliocentric distances. These observations are consistent with one exchange of momentum in the solar wind between high speed streams and low speed streams as they propagate outward from the Sun. Analyses of solar wind observations at 1 AU from mid 1964 through 1973 confirm the earlier results reported by Intriligator (1974) that there are statistically significant variations in the solar wind in 1968 and 1969, years of solar maximum. High speed stream parameters show that the number of high speed streams in the solar wind in 1968 and 1969 is considerably more than the predicted yearly average, and in 1965 and 1972 less. Histograms of solar wind speed from 1964 through 1973 indicate that in 1968 there was the highest percentage of elevated solar wind speeds and in 1965 and 1972 the lowest. Studies by others also confirm these results although the respective authors did not indicate this fact. The duration of the streams and the histograms for 1973 imply a shifting in the primary stream source. (Auth.)

Decomposition of silicon carbide at high pressures and temperatures

Energy Technology Data Exchange (ETDEWEB)

Daviau, Kierstin; Lee, Kanani K. M.

2017-11-01

We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60 GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

Science.gov (United States)

Kapoor, V. J.; Shokrani, M.

1991-01-01

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Frictional characteristics of silicon graphite lubricated with water at high pressure and high temperature

International Nuclear Information System (INIS)

Lee, Jae Seon; Kim, Eun Hyun; Park, Jin Seok; Kim, Jong In

2001-01-01

Experimental frictional and wear characteristics of silicon graphite materials is studied in this paper. Those specimens are lubricated with high temperature and highly pressurized water to simulate the same operating condition for the journal bearing and the thrust bearing on the main coolant pump bearing in the newly developing nuclear reactor named SMART(System-integrated Modular Advanced ReacTor). Operating condition of the bearings is realized by the tribometer and the autoclave. Friction coefficient and wear loss are analyzed to choose the best silicon graphite material. Pin on plate test specimens are used and coned disk springs are used to control the applied force on the specimens. Wear loss and wear width are measured by a precision balance and a micrometer. The friction force is measured by the strain gauge which can be used under high temperature and high pressure. Three kinds of silicon graphite materials are examined and compared with each other, and each material shows similar but different results on frictional and wear characteristics

Study of CW Nd-Yag laser welding of Zn-coated steel sheets

International Nuclear Information System (INIS)

Fabbro, Remy; Coste, Frederic; Goebels, Dominique; Kielwasser, Mathieu

2006-01-01

The welding of Zn-coated steel thin sheets is a great challenge for the automotive industry. Previous studies have defined the main physical processes involved. For non-controlled conditions, the zinc vapour expelled from the interface of the two sheets violently expands inside the keyhole and expels the melt pool. When using CO 2 lasers, we have previously shown that an elongated laser spot produces an elongated keyhole, which is efficient for suppressing this effect. We have adopted a similar approach for CW Nd : Yag laser welding and we observe that an elongated spot is not necessary for achieving good weld seams. Several diagnostics were used in order to understand these interesting results. High-speed video camera visualizations of the top and the bottom of the keyhole during the process show the dynamics of the keyhole hydrodynamic behaviour. It appears that the role of the reflected beam on the front keyhole wall for generating a characteristic rear wall deformation is crucial for an efficient stabilization of the process. Our dynamic keyhole modelling, which includes ray tracing, totally confirms this interpretation and explains the results for very different experimental conditions (effect of welding speed, laser intensity, variable sheet thickness, laser beam intensity distribution) that will be presented

Rat muscle blood flows during high-speed locomotion

International Nuclear Information System (INIS)

Armstrong, R.B.; Laughlin, M.H.

1985-01-01

We previously studied blood flow distribution within and among rat muscles as a function of speed from walking (15 m/min) through galloping (75 m/min) on a motor-driven treadmill. The results showed that muscle blood flows continued to increase as a function of speed through 75 m/min. The purpose of the present study was to have rats run up to maximal treadmill speeds to determine if blood flows in the muscles reach a plateau as a function of running speed over the animals normal range of locomotory speeds. Muscle blood flows were measured with radiolabeled microspheres at 1 min of running at 75, 90, and 105 m/min in male Sprague-Dawley rats. The data indicate that even at these relatively high treadmill speeds there was still no clear evidence of a plateau in blood flow in most of the hindlimb muscles. Flows in most muscles continued to increase as a function of speed. These observed patterns of blood flow vs. running speed may have resulted from the rigorous selection of rats that were capable of performing the high-intensity exercise and thus only be representative of a highly specific population of animals. On the other hand, the data could be interpreted to indicate that the cardiovascular potential during exercise is considerably higher in laboratory rats than has normally been assumed and that inadequate blood flow delivery to the muscles does not serve as a major limitation to their locomotory performance

The development of two ASIC's for a fast silicon strip detector readout system

International Nuclear Information System (INIS)

Christain, D.; Haldeman, M.; Yarema, R.; Zimmerman, T.; Newcomer, F.M.; VanBerg, R.

1989-01-01

A high speed, low noise readout system for silicon strip detectors is being developed for Fermilab E771, which will begin taking data in 1989. E771 is a fixed target experiment designed to study the production of B hadrons by an 800 GeV/c proton beam. The experimental apparatus consists of an open geometry magnetic spectrometer featuring good muon and electron identification and a 16000 channel silicon microstrip vertex detector. This paper reviews the design and prototyping of two application specific integrated circuits (ASIC's) an amplifier and a discriminator, which are being produced for the silicon strip detector readout system

A bipolar monolithic preamplifier for high-capacitance SSC [Superconducting Super Collider] silicon calorimetry

International Nuclear Information System (INIS)

Britton, C.L. Jr.; Kennedy, E.J.; Bugg, W.M.

1990-01-01

This paper describes a preamplifier designed and fabricated specifically to address the requirements of silicon calorimetry for the Superconducting Super Collider (SSC). The topology and its features are discussed in addition to the design methodology employed. The simulated and measured results for noise, power consumption, and speed are presented. Simulated an measured data for radiation damage effects as well as data for post-damage annealing are also presented. 8 refs., 7 figs., 2 tabs

Highly efficient silicon light emitting diode

NARCIS (Netherlands)

Le Minh, P.; Holleman, J.; Wallinga, Hans

2002-01-01

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

Silicon carbide production by Self-Propagating High Temperature (SHS) technique

International Nuclear Information System (INIS)

Lima, Eduardo de Souza; Schneider, Pedro Luiz; Mattoso, Irani Guedes; Costa, Carlos Roberto Correia da; Louro, Luis Henrique Leme

1997-01-01

Samples of silicon carbide (SiC) were synthesized from a mixture of silicon and carbon powders, using the Self-Propagating High Temperature Synthesis (SHS) technique. Three mixtures were tried, using silicon particles of the same average size but carbon particles of different average sizes. The method tried is characterized by an ignition temperature of 1450 deg C and the short duration of the synthesis ( 2-3 min). The samples were characterized by X-ray diffraction and scattering electron microscopy. (author)

High-Speed Photo-Polarimetry of Magnetic Cataclysmic Variables

Directory of Open Access Journals (Sweden)

S. B. Potter

2015-02-01

Full Text Available I review recent highlights of the SAAO High-speed Photo-POlarimeter (HIPPO on the study of magnetic Cataclysmic Variables. Its high-speed capabilities are demonstrated with example observations made of the intermediate polar NY Lup and the polar IGRJ14536-5522.

Trend on High-speed Power Line Communication Technology

Science.gov (United States)

Ogawa, Osamu

High-speed power line communication (PLC) is useful technology to easily build the communication networks, because construction of new infrastructure is not necessary. In Europe and America, PLC has been used for broadband networks since the beginning of 21th century. In Japan, high-speed PLC was deregulated only indoor usage in 2006. Afterward it has been widely used for home area network, LAN in hotels and school buildings and so on. And recently, PLC is greatly concerned as communication technology for smart grid network. In this paper, the author surveys the high-speed PLC technology and its current status.

A high speed digital noise generator

Science.gov (United States)

Obrien, J.; Gaffney, B.; Liu, B.

In testing of digital signal processing hardware, a high speed pseudo-random noise generator is often required to simulate an input noise source to the hardware. This allows the hardware to be exercised in a manner analogous to actual operating conditions. In certain radar and communication environments, a noise generator operating at speeds in excess of 60 MHz may be required. In this paper, a method of generating high speed pseudo-random numbers from an arbitrarily specified distribution (Gaussian, Log-Normal, etc.) using a transformation from a uniform noise source is described. A noise generator operating at 80 MHz has been constructed. Different distributions can be readily obtained by simply changing the ROM set. The hardware and test results will be described. Using this approach, the generation of pseudo-random sequences with arbitrary distributions at word rates in excess of 200 MHz can be readily achieved.

Compressibility, turbulence and high speed flow

CERN Document Server

Gatski, Thomas B

2013-01-01

Compressibility, Turbulence and High Speed Flow introduces the reader to the field of compressible turbulence and compressible turbulent flows across a broad speed range, through a unique complimentary treatment of both the theoretical foundations and the measurement and analysis tools currently used. The book provides the reader with the necessary background and current trends in the theoretical and experimental aspects of compressible turbulent flows and compressible turbulence. Detailed derivations of the pertinent equations describing the motion of such turbulent flows is provided and an extensive discussion of the various approaches used in predicting both free shear and wall bounded flows is presented. Experimental measurement techniques common to the compressible flow regime are introduced with particular emphasis on the unique challenges presented by high speed flows. Both experimental and numerical simulation work is supplied throughout to provide the reader with an overall perspective of current tre...

High-speed solar wind flow parameters at 1 AU

International Nuclear Information System (INIS)

Feldman, W.C.; Asbridge, J.R.; Bame, S.J.; Gosling, J.T.

1976-01-01

To develop a set of constraints for theories of solar wind high-speed streams, a detailed study was made of the fastest streams observed at 1 AU during the time period spanning March 1971 through July 1974. Streams were accepted for study only if (1) the maximum speed exceeded 650 km s -1 ; (2) effects of stream-stream dynamical interaction on the flow parameters could be safely separated from the intrinsic characteristics of the high-speed regions; (3) the full width at half maximum (FWHM) of the stream when mapped back to 20 solar radii by using a constant speed approximation was greater than 45degree in Carrington longitude; and (4) there were no obvious solar-activity-induced contaminating effects. Nineteen streams during this time interval satisfied these criteria. Average parameters at 1 AU for those portions of these streams above V=650 km s -1 are given.Not only is it not presently known why electrons are significantly cooler than the protons within high-speed regions, but also observed particle fluxes and convected energy fluxes for speed greater than 650 km s -1 are substantially larger than those values predicted by any of the existing theories of solar wind high-speed streams. More work is therefore needed in refining present solar wind models to see whether suitable modifications and/or combinations of existing theories based on reasonable coronal conditions can accommodate the above high-speed flow parameters

Fluorescent porous silicon biological probes with high quantum efficiency and stability.

Science.gov (United States)

Tu, Chang-Ching; Chou, Ying-Nien; Hung, Hsiang-Chieh; Wu, Jingda; Jiang, Shaoyi; Lin, Lih Y

2014-12-01

We demonstrate porous silicon biological probes as a stable and non-toxic alternative to organic dyes or cadmium-containing quantum dots for imaging and sensing applications. The fluorescent silicon quantum dots which are embedded on the porous silicon surface are passivated with carboxyl-terminated ligands through stable Si-C covalent bonds. The porous silicon bio-probes have shown photoluminescence quantum yield around 50% under near-UV excitation, with high photochemical and thermal stability. The bio-probes can be efficiently conjugated with antibodies, which is confirmed by a standard enzyme-linked immunosorbent assay (ELISA) method.

California statewide model for high-speed rail

OpenAIRE

Outwater, Maren; Tierney, Kevin; Bradley, Mark; Sall, Elizabeth; Kuppam, Arun; Modugala, Vamsee

2010-01-01

The California High Speed Rail Authority (CHSRA) and the Metropolitan Transportation Commission (MTC) have developed a new statewide model to support evaluation of high-speed rail alternatives in the State of California. This statewide model will also support future planning activities of the California Department of Transportation (Caltrans). The approach to this statewide model explicitly recognizes the unique characteristics of intraregional travel demand and interregional travel demand. A...

Low cost silicon solar array project large area silicon sheet task: Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

1977-01-01

Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

Battery with a microcorrugated, microthin sheet of highly porous corroded metal

Science.gov (United States)

LaFollette, Rodney M.

2005-09-27

Microthin sheet technology is disclosed by which superior batteries are constructed which, among other things, accommodate the requirements for high load rapid discharge and recharge, mandated by electric vehicle criteria. The microthin sheet technology has process and article overtones and can be used to form thin electrodes used in batteries of various kinds and types, such as spirally-wound batteries, bipolar batteries, lead acid batteries silver/zinc batteries, and others. Superior high performance battery features include: (a) minimal ionic resistance; (b) minimal electronic resistance; (c) minimal polarization resistance to both charging and discharging; (d) improved current accessibility to active material of the electrodes; (e) a high surface area to volume ratio; (f) high electrode porosity (microporosity); (g) longer life cycle; (h) superior discharge/recharge characteristics; (i) higher capacities (A.multidot.hr); and (j) high specific capacitance.

Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

KAUST Repository

Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

KAUST Repository

Nassar, Joanna M.

2014-08-01

Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

KAUST Repository

Cui, Li-Feng

2009-01-14

Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

Study on high-silicon boron-containing zeolite by thermogravimetric and IR-spectroscopy techniques

International Nuclear Information System (INIS)

Chukin, G.D.; Nefedov, B.K.; Surin, S.A.; Polinina, E.V.; Khusid, B.L.; Sidel'kovskaya, V.G.

1985-01-01

The structure identity of initial Na-forms of boron-containing and aluminosilicate high-silicon zeolites is established by thermogravimetric and IR-spectroscopy methods. The presence of boron in Na-forms of high-silicon zeolites is shown to lead to reduction of structure thermal stability. It is noted that thermal stability of the H-form of both high-silicon boron-containing and boron-free zeolites is practically equal and considerably higher than that of Na-forms

High-Tc superconducting antenna-coupled microbolometer on silicon

Science.gov (United States)

Rice, Joseph P.; Grossman, Erich N.; Borcherdt, L. J.; Rudman, D. A.

1994-05-01

A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Tc superconductor YBa2Cu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 X 10-6 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 microsecond(s) , a responsivity of the 1000 V/W range, and a noise-equivalent power in the 10-12 W/Hz1/2 range at 1000 Hz.

Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Science.gov (United States)

Wolfson, R. G.; Sibley, C. B.

1978-01-01

The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

Synthetic Strategies for High Dielectric Constant Silicone Elastomers

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt

synthetic strategies were developed in this Ph.D. thesis, in order to create silicone elastomers with high dielectric constants and thereby higher energy densities. The work focused on maintaining important properties such as dielectric loss, electrical breakdown strength and elastic modulus....... The methodology therefore involved chemically grafting high dielectric constant chemical groups onto the elastomer network, as this would potentially provide a stable elastomer system upon continued activation of the material. The first synthetic strategy involved the synthesis of a new type of cross...... extender’ that allowed for chemical modifications such as Cu- AAC. This route was promising for one-pot elastomer preparation and as a high dielectric constant additive to commercial silicone systems. The second approach used the borane-catalysed Piers-Rubinsztajn reaction to form spatially well...

Cutting thin sheets of allyl diglycol carbonate (CR-39) with a CW CO2, laser

International Nuclear Information System (INIS)

Kukreja, L.M.; Bhawalkar, D.D.; Basu, C.; Goswami, J.N.

1984-01-01

Recent studies have shown that Allyl Diglycol Carbonate, commercially known as CR-39 (the most sensitive among etch track detectors) can detect relativistic oxygen and other heavier nuclei. We are using large sheets of special grade CR-39 (DOP) in our experiment in Space Shuttle-Spacelab-3. As CR-39 is a highly brittle substance, special care is required to cut CR-39 shetts, especially in case of large sheets and circular cuts. A study of cutting of CR-39 sheets using laser light is described in this paper. It has been found that this method is sufficiently fast to handle large number of sheets and also equally safe for big sheets. A maximum speed up to 200 cm/min with a 5 x 10 4 W/cm 2 laser is obtained during the present study. This study also shows that laser cutting does not affect the track properties of CR-39. (orig.)

Research on Aerodynamic Noise Reduction for High-Speed Trains

OpenAIRE

Zhang, Yadong; Zhang, Jiye; Li, Tian; Zhang, Liang; Zhang, Weihua

2016-01-01

A broadband noise source model based on Lighthill’s acoustic theory was used to perform numerical simulations of the aerodynamic noise sources for a high-speed train. The near-field unsteady flow around a high-speed train was analysed based on a delayed detached-eddy simulation (DDES) using the finite volume method with high-order difference schemes. The far-field aerodynamic noise from a high-speed train was predicted using a computational fluid dynamics (CFD)/Ffowcs Williams-Hawkings (FW-H)...

Nugget Structure Evolution with Rotation Speed for High-Rotation-Speed Friction-Stir-Welded 6061 Aluminum Alloy

Science.gov (United States)

Zhang, H. J.; Wang, M.; Zhu, Z.; Zhang, X.; Yu, T.; Wu, Z. Q.

2018-03-01

High-rotation-speed friction stir welding (HRS-FSW) is a promising technique to reduce the welding loads during FSW and thus facilitates the application of FSW for in situ fabrication and repair. In this study, 6061 aluminum alloy was friction stir welded at high-rotation speeds ranging from 3000 to 7000 rpm at a fixed welding speed of 50 mm/min, and the effects of rotation speed on the nugget zone macro- and microstructures were investigated in detail in order to illuminate the process features. Temperature measurements during HRS-FSW indicated that the peak temperature did not increase consistently with rotation speed; instead, it dropped remarkably at 5000 rpm because of the lowering of material shear stress. The nugget size first increased with rotation speed until 5000 rpm and then decreased due to the change of the dominant tool/workpiece contact condition from sticking to sliding. At the rotation speed of 5000 rpm, where the weld material experienced weaker thermal effect and higher-strain-rate plastic deformation, the nugget exhibited relatively small grain size, large textural intensity, and high dislocation density. Consequently, the joint showed superior nugget hardness and simultaneously a slightly low tensile ductility.

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

Directory of Open Access Journals (Sweden)

Jinzhang Liu

2012-05-01

Full Text Available ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS, a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse.

Balancing High-Speed Rotors at Low Speed

Science.gov (United States)

Giordano, J.; Zorzi, E.

1986-01-01

Flexible balancing reduces vibrations at operating speeds. Highspeed rotors in turbomachines dynamically balanced at fraction of operating rotor speed. New method takes into account rotor flexible rather than rigid.

High-speed holographic camera

International Nuclear Information System (INIS)

Novaro, Marc

The high-speed holographic camera is a disgnostic instrument using holography as an information storing support. It allows us to take 10 holograms, of an object, with exposures times of 1,5ns, separated in time by 1 or 2ns. In order to get these results easily, no mobile part is used in the set-up [fr

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

Science.gov (United States)

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Recent progress on high-speed optical transmission

Directory of Open Access Journals (Sweden)

Jianjun Yu

2016-05-01

Full Text Available The recently reported high spectral efficiency (SE and high-baud-rate signal transmission are all based on digital coherent optical communications and digital signal processing (DSP. DSP simplifies the reception of advanced modulation formats and also enables the major electrical and optical impairments to be processed and compensated in the digital domain, at the transmitter or receiver side. In this paper, we summarize the research progress on high-speed signal generation and detection and also show the progress on DSP for high-speed signal detection. We also report the latest progress on multi-core and multi-mode multiplexing.

Hydrophilic functionalized silicon nanoparticles produced by high energy ball milling

Science.gov (United States)

Hallmann, Steffen

The mechanochemical synthesis of functionalized silicon nanoparticles using High Energy Ball Milling (HEBM) is described. This method facilitates the fragmentation of mono crystalline silicon into the nanometer regime and the simultaneous surface functionalization of the formed particles. The surface functionalization is induced by the reaction of an organic liquid, such as alkynes and alkenes with reactive silicon sites. This method can be applied to form water soluble silicon nanoparticles by lipid mediated micelle formation and the milling in organic liquids containing molecules with bi-functional groups, such as allyl alcohol. Furthermore, nanometer sized, chloroalkyl functionalized particles can be synthesized by milling the silicon precursor in the presence of an o-chloroalkyne with either alkenes or alkynes as coreactants. This process allows tuning of the concentration of the exposed, alkyl linked chloro groups, simply by varying the relative amounts of the coreactant. The silicon nanoparticles that are formed serve as the starting point for a wide variety of chemical reactions, which may be used to alter the surface properties of the functionalized nanoparticles. Finally, the use of functionalized silicon particles for the production of superhydrophobic films is described. Here HEBM proves to be an efficient method to produce functionalized silicon particles, which can be deposited to form a stable coating exhibiting superhydrophobic properties. The hydrophobicity of the silicon film can be tuned by the milling time and thus the resulting surface roughness of the films.

Unzip instabilities: Straight to oscillatory transitions in the cutting of thin polymer sheets

Science.gov (United States)

Reis, P. M.; Kumar, A.; Shattuck, M. D.; Roman, B.

2008-06-01

We report an experimental investigation of the cutting of a thin brittle polymer sheet with a blunt tool. It was recently shown that the fracture path becomes oscillatory when the tool is much wider than the sheet thickness. Here we uncover two novel transitions from straight to oscillatory fracture by varying either the tilt angle of the tool or the speed of cutting, respectively. We denote these by angle and speed unzip instabilities and analyze them by quantifying both the dynamics of the crack tip and the final shapes of the fracture paths. Moreover, for the speed unzip instability, the straight crack lip obtained at low speeds exhibits out-of-plane buckling undulations (as opposed to being flat above the instability threshold) suggesting a transition from ductile to brittle fracture.

Generation of sheet currents by high frequency fast MHD waves

Energy Technology Data Exchange (ETDEWEB)

Núñez, Manuel, E-mail: mnjmhd@am.uva.es

2016-07-01

The evolution of fast magnetosonic waves of high frequency propagating into an axisymmetric equilibrium plasma is studied. By using the methods of weakly nonlinear geometrical optics, it is shown that the perturbation travels in the equatorial plane while satisfying a transport equation which enables us to predict the time and location of formation of shock waves. For plasmas of large magnetic Prandtl number, this would result into the creation of sheet currents which may give rise to magnetic reconnection and destruction of the original equilibrium. - Highlights: • Regular solutions of quasilinear hyperbolic systems may evolve into shocks. • The shock location is found for high frequency fast MHD waves. • The result is applied to static axisymmetric equilibria. • The previous process may lead to the formation of sheet currents and destruction of the equilibrium.

Single-Photon Tracking for High-Speed Vision

Directory of Open Access Journals (Sweden)

Istvan Gyongy

2018-01-01

Full Text Available Quanta Imager Sensors provide photon detections at high frame rates, with negligible read-out noise, making them ideal for high-speed optical tracking. At the basic level of bit-planes or binary maps of photon detections, objects may present limited detail. However, through motion estimation and spatial reassignment of photon detections, the objects can be reconstructed with minimal motion artefacts. We here present the first demonstration of high-speed two-dimensional (2D tracking and reconstruction of rigid, planar objects with a Quanta Image Sensor, including a demonstration of depth-resolved tracking.

A high-speed interface for multi-channel analyzer

International Nuclear Information System (INIS)

Shen Ji; Zheng Zhong; Qiao Chong; Chen Ziyu; Ye Yunxiu; Ye Zhenyu

2003-01-01

This paper presents a high-speed computer interface for multi-channel analyzer based on DMA technique. Its essential principle and operating procedure are introduced. By the detecting of γ spectrum of 137 Cs with the interface, it's proved that the interface can meet the requirements of high-speed data acquisition

High-speed readout of high-Z pixel detectors with the LAMBDA detector

International Nuclear Information System (INIS)

Pennicard, D.; Smoljanin, S.; Sheviakov, I.; Xia, Q.; Rothkirch, A.; Yu, Y.; Struth, B.; Hirsemann, H.; Graafsma, H.

2014-01-01

High-frame-rate X-ray pixel detectors make it possible to perform time-resolved experiments at synchrotron beamlines, and to make better use of these sources by shortening experiment times. LAMBDA is a photon-counting hybrid pixel detector based on the Medipix3 chip, designed to combine a small pixel size of 55 μm, a large tileable module design, high speed, and compatibility with ''high-Z'' sensors for hard X-ray detection. This technical paper focuses on LAMBDA's high-speed-readout functionality, which allows a frame rate of 2000 frames per second with no deadtime between successive images. This takes advantage of the Medipix3 chip's ''continuous read-write'' function and highly parallelised readout. The readout electronics serialise this data and send it back to a server PC over two 10 Gigabit Ethernet links. The server PC controls the detector and receives, processes and stores the data using software designed for the Tango control system. As a demonstration of high-speed readout of a high-Z sensor, a GaAs LAMBDA detector was used to make a high-speed X-ray video of a computer fan

Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of technologies to manufacture applied type thin film solar cells with new structure and development of high-efficiency hybrid thin film/sheet solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (oyogata shin kozo usumaku taiyo denchi no seizo gijutsu kaihatsu (kokoritsu hybrid gata usumaku / sheet taiyo denchi no seizo gijutsu kaihatsu))

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

With an objective to develop low-cost and high-efficiency hybrid thin film/sheet solar cells, research and development has been performed. This paper summarizes the achievements in fiscal 1999. The research is related to a hybrid construction, in which the upper cells of amorphous silicon thin film are formed on the lower cells bonded with micro-crystalline silicon thin film relative to a poly-crystalline silicon sheet. In the technology to form the upper cells, a pin-construction using amorphous silicon thin film made by using the plasma CVD process was adopted, whereas an open circuit voltage of 1.45V, a short circuit current of 13.6 mA/cm{sup 2}, and a conversion efficiency of 13.5% were obtained. In the technology to form the substrate for the lower cells, formation of flat silicon thin plate that can be peeled off was identified as a result of adopting the construction in which a graphite substrate is provided on a rotating cooling body of 12-prism type. With regard to the technology to bond and form the lower cells, electrical properties of hetero-bonded cells were discussed, and an open circuit voltage of 0.605V and a conversion efficiency of 14.3% were obtained as a result of enhancing the film quality and optimizing the film thickness. (NEDO)

High Speed Magnetostrictive MEMS Actuated Mirror Deflectors, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — The main goal of this proposal is to develop high speed magnetostrictive and MEMS actuators for rapidly deflecting or deforming mirrors. High speed, light-weight,...

A high speed serializer ASIC for ATLAS Liquid Argon calorimeter upgrade

CERN Document Server

Liu, T; The ATLAS collaboration

2011-01-01

The current front-end electronics of the ATLAS Liquid Argon calorimeters need to be upgraded to sustain the higher radiation levels and data rates expected at the upgraded LHC machine (HL-LHC), which will have 5 times more luminosity than the LHC in its ultimate configuration. This upgrade calls for an optical link system of 100 Gbps per front-end board (FEB). A high speed, low power, radiation tolerant serializer is the critical component in this system. In this paper, we present the design and test results of a single channel 16:1 serializer and the design of a double-channel 16:1 serializer. Both designs are based on a commercial 0.25 μm silicon-on-sapphire CMOS technology. The single channel serializer consists of a serializing unit, a PLL clock generator and a line driver implemented in current mode logic (CML). The serializing unit multiplexes 16 bit parallel LVDS data into 1-bit width serial CMOS data. The serializing unit is composed of a cascade of 2:1 multiplexing circuits based on static D-flip-fl...

Utilizing boron nitride sheets as thin supports for high resolution imaging of nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Wu, Yimin A; Kirkland, Angus I; Schaeffel, Franziska; Porfyrakis, Kyriakos; Young, Neil P; Briggs, G Andrew D; Warner, Jamie H, E-mail: Jamie.warner@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

2011-05-13

We demonstrate the use of thin BN sheets as supports for imaging nanocrystals using low voltage (80 kV) aberration-corrected high resolution transmission electron microscopy. This provides an alternative to the previously utilized 2D crystal supports of graphene and graphene oxide. A simple chemical exfoliation method is applied to get few layer boron nitride (BN) sheets with micrometer-sized dimensions. This generic approach of using BN sheets as supports is shown by depositing Mn doped ZnSe nanocrystals directly onto the BN sheets and resolving the atomic structure from both the ZnSe nanocrystals and the BN support. Phase contrast images reveal moire patterns of interference between the beams diffracted by the nanocrystals and the BN substrate that are used to determine the relative orientation of the nanocrystals with respect to the BN sheets and interference lattice planes. Double diffraction is observed and has been analyzed.

Utilizing boron nitride sheets as thin supports for high resolution imaging of nanocrystals

International Nuclear Information System (INIS)

Wu, Yimin A; Kirkland, Angus I; Schaeffel, Franziska; Porfyrakis, Kyriakos; Young, Neil P; Briggs, G Andrew D; Warner, Jamie H

2011-01-01

We demonstrate the use of thin BN sheets as supports for imaging nanocrystals using low voltage (80 kV) aberration-corrected high resolution transmission electron microscopy. This provides an alternative to the previously utilized 2D crystal supports of graphene and graphene oxide. A simple chemical exfoliation method is applied to get few layer boron nitride (BN) sheets with micrometer-sized dimensions. This generic approach of using BN sheets as supports is shown by depositing Mn doped ZnSe nanocrystals directly onto the BN sheets and resolving the atomic structure from both the ZnSe nanocrystals and the BN support. Phase contrast images reveal moire patterns of interference between the beams diffracted by the nanocrystals and the BN substrate that are used to determine the relative orientation of the nanocrystals with respect to the BN sheets and interference lattice planes. Double diffraction is observed and has been analyzed.

Periodic folding of viscous sheets

Science.gov (United States)

Ribe, Neil M.

2003-09-01

The periodic folding of a sheet of viscous fluid falling upon a rigid surface is a common fluid mechanical instability that occurs in contexts ranging from food processing to geophysics. Asymptotic thin-layer equations for the combined stretching-bending deformation of a two-dimensional sheet are solved numerically to determine the folding frequency as a function of the sheet’s initial thickness, the pouring speed, the height of fall, and the fluid properties. As the buoyancy increases, the system bifurcates from “forced” folding driven kinematically by fluid extrusion to “free” folding in which viscous resistance to bending is balanced by buoyancy. The systematics of the numerically predicted folding frequency are in good agreement with laboratory experiments.

Simple processing of high efficiency silicon solar cells

International Nuclear Information System (INIS)

Hamammu, I.M.; Ibrahim, K.

2006-01-01

Cost effective photovoltaic devices have been an area research since the development of the first solar cells, as cost is the major factor in their usage. Silicon solar cells have the biggest share in the photovoltaic market, though silicon os not the optimal material for solar cells. This work introduces a simplified approach for high efficiency silicon solar cell processing, by minimizing the processing steps and thereby reducing cost. The suggested procedure might also allow for the usage of lower quality materials compared to the one used today. The main features of the present work fall into: simplifying the diffusion process, edge shunt isolation and using acidic texturing instead of the standard alkaline processing. Solar cells of 17% efficiency have been produced using this procedure. Investigations on the possibility of improving the efficiency and using less quality material are still underway

TEM investigation of aluminium containing precipitates in high aluminium doped silicon carbide

International Nuclear Information System (INIS)

Wong-Leung, J.; FitzGerald, J.D.

2002-01-01

Full text: Silicon carbide is a promising semiconductor material for applications in high temperature and high power devices. The successful growth of good quality epilayers in this material has enhanced its potential for device applications. As a novel semiconductor material, there is a need for studying its basic physical properties and the role of dopants in this material. In this study, silicon carbide epilayers were grown on 4H-SiC wafers of (0001) orientation with a miscut angle of 8 deg at a temperature of 1550 deg C. The epilayers contained regions of high aluminium doping well above the solubility of aluminium in silicon carbide. High temperature annealing of this material resulted in the precipitation of aluminium in the wafers. The samples were analysed by secondary ion mass spectrometry and transmission electron microscopy. Selected area diffraction studies show the presence of aluminium carbide and aluminium silicon carbide phases. Copyright (2002) Australian Society for Electron Microscopy Inc

High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates

Science.gov (United States)

Gu, Xiaodan; Liu, Zuwei; Gunkel, Ilja; Olynick, Deirdre; Russell, Thomas; University of Massachusetts Amherst Collaboration; Oxford Instrument Collaboration; Lawrence Berkeley National Lab Collaboration

2013-03-01

High-aspect-ratio sub-15 nm silicon trenches are fabricated directly from plasma etching of a block copolymer (BCP) mask. Polystyrene-b-poly(2-vinyl pyridine) (PS-b-P2VP) 40k-b-18k was spin coated and solvent annealed to form cylindrical structures parallel to the silicon substrate. The BCP thin film was reconstructed by immersion in ethanol and then subjected to an oxygen and argon reactive ion etching to fabricate the polymer mask. A low temperature ion coupled plasma with sulfur hexafluoride and oxygen was used to pattern transfer block copolymer structure to silicon with high selectivity (8:1) and fidelity. The silicon pattern was characterized by scanning electron microscopy and grazing incidence x-ray scattering. We also demonstrated fabrication of silicon nano-holes using polystyrene-b-polyethylene oxide (PS-b-PEO) using same methodology described above for PS-b-P2VP. Finally, we show such silicon nano-strucutre serves as excellent nano-imprint master template to pattern various functional materials like poly 3-hexylthiophene (P3HT).

Cadence® High High-Speed PCB Design Flow Workshop

CERN Document Server

2006-01-01

Last release of Cadence High-Speed PCB Design methodology (PE142) based on Concept-HDL schematic editor, Constraint Manager, SPECCTRAQuest signal integrity analysis tool and ALLEGRO layout associated with SPECCTRA auto router tools, is now enough developed and stable to be taken into account for high-speed board designs at CERN. The implementation of this methodology, build around the new Constraint Manager program, is essential when you have to develop a board having a lot of high-speed design rules such as terminated lines, large bus structures, maximum length, timing, crosstalk etc.. that could not be under control by traditional method. On more conventional designs, formal aspect of the methodology could avoid misunderstanding between hardware and ALLEGRO layout designers, minimizing prototype iteration, development time and price. The capability to keep trace of the original digital designer intents in schematic or board layout, loading formal constraints in EDMS, could also be considered for LHC electro...

High-speed LWR transients simulation for optimizing emergency response

International Nuclear Information System (INIS)

Wulff, W.; Cheng, H.S.; Lekach, S.V.; Mallen, A.N.; Stritar, A.

1984-01-01

The purpose of computer-assisted emergency response in nuclear power plants, and the requirements for achieving such a response, are presented. An important requirement is the attainment of realistic high-speed plant simulations at the reactor site. Currently pursued development programs for plant simulations are reviewed. Five modeling principles are established and a criterion is presented for selecting numerical procedures and efficient computer hardware to achieve high-speed simulations. A newly developed technology for high-speed power plant simulation is described and results are presented. It is shown that simulation speeds ten times greater than real-time process-speeds are possible, and that plant instrumentation can be made part of the computational loop in a small, on-site minicomputer. Additional technical issues are presented which must still be resolved before the newly developed technology can be implemented in a nuclear power plant

Characterization of an amorphous silicon flat panel for controlling the positioning accuracy of sheet; Caracterizacion de un panel plano de silicio amorfo para control de la exactitud en el posicionamiento de laminas

Energy Technology Data Exchange (ETDEWEB)

Martinez, J.; Gonzalez, V.; Gimeno, J.; Dolores, V. de los; Pastor, V.; Crispin, V.; Guardino, C.

2011-07-01

It has established a method for measuring the position of the blades in a multi leaf collimator (MLC) used to measure dose portal imaging device (EPID) of amorphous silicon, and verified its accuracy using radiochromic films and measures water with diode Cuba, techniques perfectly well validated in our institution. This dose profiles are studied for each sheet and determine their position at the point which has 50% of the dose in the open field.

Evaluation of essential work of fracture in a dual phase high strength steel sheet

International Nuclear Information System (INIS)

Gutierrez, D.; Perez, L. I.; Lara, A.; Casellas, D.; Prado, J. M.

2013-01-01

Fracture toughness of advanced high strength steels (AHSS), can be used to optimize crash behavior of structural components. However it cannot be readily measured in metal sheet because of the sheet thickness. In this work, the Essential Work of Fracture (EWF) methodology is proposed to evaluate the fracture toughness of metal sheets. It has been successfully applied in polymers films and some metal sheets. However, their information about the applicability of this methodology to AHSS is relatively scarce. In the present work the fracture toughness of a Dual Phase (strength of 800 MPa) and drawing steel sheets has been measured by means of the EWF. The results show that the test requirements are met and also show the clear influence of notch radii on the measured values, specially for the AHSS grade. Thus, the EWF is postulated as a methodology to evaluate the fracture toughness in AHSS sheets. (Author) 18 refs.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

Energy Technology Data Exchange (ETDEWEB)

Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

2014-10-27

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

International Nuclear Information System (INIS)

Martini, R.; Kepa, J.; Stesmans, A.; Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I.; Poortmans, J.

2014-01-01

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

VLSI Implementation of a Fixed-Complexity Soft-Output MIMO Detector for High-Speed Wireless

Directory of Open Access Journals (Sweden)

Di Wu

2010-01-01

Full Text Available This paper presents a low-complexity MIMO symbol detector with close-Maximum a posteriori performance for the emerging multiantenna enhanced high-speed wireless communications. The VLSI implementation is based on a novel MIMO detection algorithm called Modified Fixed-Complexity Soft-Output (MFCSO detection, which achieves a good trade-off between performance and implementation cost compared to the referenced prior art. By including a microcode-controlled channel preprocessing unit and a pipelined detection unit, it is flexible enough to cover several different standards and transmission schemes. The flexibility allows adaptive detection to minimize power consumption without degradation in throughput. The VLSI implementation of the detector is presented to show that real-time MIMO symbol detection of 20 MHz bandwidth 3GPP LTE and 10 MHz WiMAX downlink physical channel is achievable at reasonable silicon cost.

Cutting force model for high speed machining process

International Nuclear Information System (INIS)

Haber, R. E.; Jimenez, J. E.; Jimenez, A.; Lopez-Coronado, J.

2004-01-01

This paper presents cutting force-based models able to describe a high speed machining process. The model considers the cutting force as output variable, essential for the physical processes that are taking place in high speed machining. Moreover, this paper shows the mathematical development to derive the integral-differential equations, and the algorithms implemented in MATLAB to predict the cutting force in real time MATLAB is a software tool for doing numerical computations with matrices and vectors. It can also display information graphically and includes many toolboxes for several research and applications areas. Two end mill shapes are considered (i. e. cylindrical and ball end mill) for real-time implementation of the developed algorithms. the developed models are validated in slot milling operations. The results corroborate the importance of the cutting force variable for predicting tool wear in high speed machining operations. The developed models are the starting point for future work related with vibration analysis, process stability and dimensional surface finish in high speed machining processes. (Author) 19 refs

Double fillet lap of laser welding of thin sheet AZ31B Mg alloy

Science.gov (United States)

Ishak, Mahadzir; Salleh, M. N. M.

2018-05-01

In this paper, we describe the experimental laser welding of thin sheet AZ31B using double fillet lap joint method. Laser welding is capable of producing high quality weld seams especially for small weld bead on thin sheet product. In this experiment, both edges for upper and lower sheets were subjected to the laser beam from the pulse wave (PW) mode of fiber laser. Welded sample were tested their joint strength by tensile-shear strength method and the fracture loads were studied. Strength for all welded samples were investigated and the effect of laser parameters on the joint strength and appearances were studied. Pulsed energy (EP) from laser process give higher effect on joint strength compared to the welding speed (WS) and angle of irradiation (AOI). Highest joint strength was possessed by sample with high EP with the same value of WS and AOI. The strength was low due to the crack defect at the centre of weld region.

High speed optical wireless data transmission system for particle sensors in high energy physics

Science.gov (United States)

Ali, W.; Corsini, R.; Ciaramella, E.; Dell'Orso, R.; Messineo, A.; Palla, F.

2015-08-01

High speed optical fiber or copper wire communication systems are frequently deployed for readout data links used in particle physics detectors. Future detector upgrades will need more bandwidth for data transfer, but routing requirements for new cables or optical fiber will be challenging due to space limitations. Optical wireless communication (OWC) can provide high bandwidth connectivity with an advantage of reduced material budget and complexity of cable installation and management. In a collaborative effort, Scuola Superiore Sant'Anna and INFN Pisa are pursuing the development of a free-space optical link that could be installed in a future particle physics detector or upgrade. We describe initial studies of an OWC link using the inner tracker of the Compact Muon Solenoid (CMS) detector as a reference architecture. The results of two experiments are described: the first to verify that the laser source transmission wavelength of 1550 nm will not introduce fake signals in silicon strip sensors while the second was to study the source beam diameter and its tolerance to misalignment. For data rates of 2.5 Gb/s and 10 Gb/s over a 10 cm working distance it was observed that a tolerance limit of ±0.25 mm to ±0.8 mm can be obtained for misaligned systems with source beam diameters of 0.38 mm to 3.5 mm, respectively.

Synthesis of silicon nanocomposite for printable photovoltaic devices on flexible substrate

Science.gov (United States)

Odo, E. A.; Faremi, A. A.

2017-06-01

Renewed interest has been established in the preparation of silicon nanoparticles for electronic device applications. In this work, we report on the production of silicon powders using a simple ball mill and of silicon nanocomposite ink for screen-printable photovoltaic device on a flexible substrate. Bulk single crystalline silicon was milled for 25 h in the ball mill. The structural properties of the produced silicon nanoparticles were investigated using X-ray diffraction (XRD) and transmission electron microscopy. The results show that the particles remained highly crystalline, though transformed from their original single crystalline state to polycrystalline. The elemental composition using energy dispersive X-ray florescence spectroscopy (EDXRF) revealed that contamination from iron (Fe) and chromium (Cr) of the milling media and oxygen from the atmosphere were insignificant. The size distribution of the nanoparticles follows a lognormal pattern that ranges from 60 nm to about 1.2 μm and a mean particle size of about 103 nm. Electrical characterization of screen-printed PN structures of the nanocomposite formed by embedding the powder into a suitable water-soluble polymer on Kapton sheet reveals an enhanced photocurrent transport resulting from photo-induced carrier generation in the depletion region with energy greater that the Schottky barrier height at the metal-composite interface.

Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

International Nuclear Information System (INIS)

Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

2007-01-01

Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

Research on the tool holder mode in high speed machining

Science.gov (United States)

Zhenyu, Zhao; Yongquan, Zhou; Houming, Zhou; Xiaomei, Xu; Haibin, Xiao

2018-03-01

High speed machining technology can improve the processing efficiency and precision, but also reduce the processing cost. Therefore, the technology is widely regarded in the industry. With the extensive application of high-speed machining technology, high-speed tool system has higher and higher requirements on the tool chuck. At present, in high speed precision machining, several new kinds of clip heads are as long as there are heat shrinkage tool-holder, high-precision spring chuck, hydraulic tool-holder, and the three-rib deformation chuck. Among them, the heat shrinkage tool-holder has the advantages of high precision, high clamping force, high bending rigidity and dynamic balance, etc., which are widely used. Therefore, it is of great significance to research the new requirements of the machining tool system. In order to adapt to the requirement of high speed machining precision machining technology, this paper expounds the common tool holder technology of high precision machining, and proposes how to select correctly tool clamping system in practice. The characteristics and existing problems are analyzed in the tool clamping system.

First-principles equation-of-state table of silicon and its effects on high-energy-density plasma simulations

Science.gov (United States)

Hu, S. X.; Gao, R.; Ding, Y.; Collins, L. A.; Kress, J. D.

2017-04-01

Using density-functional theory-based molecular-dynamics simulations, we have investigated the equation of state for silicon in a wide range of plasma density and temperature conditions of ρ =0.001 -500 g /c m3 and T =2000 -108K . With these calculations, we have established a first-principles equation-of-state (FPEOS) table of silicon for high-energy-density (HED) plasma simulations. When compared with the widely used SESAME-EOS model (Table 3810), we find that the FPEOS-predicted Hugoniot is ˜20% softer; for off-Hugoniot plasma conditions, the pressure and internal energy in FPEOS are lower than those of SESAME EOS for temperatures above T ≈ 1-10 eV (depending on density), while the former becomes higher in the low-T regime. The pressure difference between FPEOS and SESAME 3810 can reach to ˜50%, especially in the warm-dense-matter regime. Implementing the FPEOS table of silicon into our hydrocodes, we have studied its effects on Si-target implosions. When compared with the one-dimensional radiation-hydrodynamics simulation using the SESAME 3810 EOS model, the FPEOS simulation showed that (1) the shock speed in silicon is ˜10% slower; (2) the peak density of an in-flight Si shell during implosion is ˜20% higher than the SESAME 3810 simulation; (3) the maximum density reached in the FPEOS simulation is ˜40% higher at the peak compression; and (4) the final areal density and neutron yield are, respectively, ˜30% and ˜70% higher predicted by FPEOS versus the traditional simulation using SESAME 3810. All of these features can be attributed to the larger compressibility of silicon predicted by FPEOS. These results indicate that an accurate EOS table, like the FPEOS presented here, could be essential for the precise design of targets for HED experiments.

Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

Science.gov (United States)

Dumas, K. A.; Swimm, R. T.

1980-01-01

Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

High-speed photodetectors in optical communication system

Science.gov (United States)

Zhao, Zeping; Liu, Jianguo; Liu, Yu; Zhu, Ninghua

2017-12-01

This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems. Project supported by the Preeminence Youth Fund of China (No. 61625504).

LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski Growth. [for solar cell fabrication

Science.gov (United States)

Fiegl, G.

1979-01-01

The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.

Optimization of Single Point Incremental Forming of Al5052-O Sheet

Energy Technology Data Exchange (ETDEWEB)

Kim, Chan Il; Xiao, Xiao; Do, Van Cuong; Kim, Young Suk [Kyungpook Nat’l Univ., Daegu (Korea, Republic of)

2017-03-15

Single point incremental forming (SPIF) is a sheet-forming technique. It is a die-less sheet metal manufacturing process for rapid prototyping and small batch production. The Critical parameters in the forming process include tool diameter, step depth, feed rate, spindle speed, etc. In this study, these parameters and the die shape corresponding to the Varying Wall Angle Conical Frustum(VWACF) model were used for forming 0.8mm in thick Al5052-O sheets. The Taguchi method of Experiments of Design (DOE) and Grey relational optimization were used to determine the optimum parameters in SPIF. A response study was performed on formability, spring back, and thickness reduction. The research shows that the optimum combination of these parameters that yield best performance of SPIF is as follows: tool diameter, 6mm; spin speed, 60rpm; step depth, 0.3mm; and feed rate, 500mm/min.

Analysis and topology optimization design of high-speed driving spindle

Science.gov (United States)

Wang, Zhilin; Yang, Hai

2018-04-01

The three-dimensional model of high-speed driving spindle is established by using SOLIDWORKS. The model is imported through the interface of ABAQUS, A finite element analysis model of high-speed driving spindle was established by using spring element to simulate bearing boundary condition. High-speed driving spindle for the static analysis, the spindle of the stress, strain and displacement nephogram, and on the basis of the results of the analysis on spindle for topology optimization, completed the lightweight design of high-speed driving spindle. The design scheme provides guidance for the design of axial parts of similar structures.

Deposition and micro electrical discharge machining of CVD-diamond layers incorporated with silicon

Science.gov (United States)

Kühn, R.; Berger, T.; Prieske, M.; Börner, R.; Hackert-Oschätzchen, M.; Zeidler, H.; Schubert, A.

2017-10-01

In metal forming, lubricants have to be used to prevent corrosion or to reduce friction and tool wear. From an economical and ecological point of view, the aim is to avoid the usage of lubricants. For dry deep drawing of aluminum sheets it is intended to apply locally micro-structured wear-resistant carbon based coatings onto steel tools. One type of these coatings are diamond layers prepared by chemical vapor deposition (CVD). Due to the high strength of diamond, milling processes are unsuitable for micro-structuring of these layers. In contrast to this, micro electrical discharge machining (micro EDM) is a suitable process for micro-structuring CVD-diamond layers. Due to its non-contact nature and its process principle of ablating material by melting and evaporating, it is independent of the hardness, brittleness or toughness of the workpiece material. In this study the deposition and micro electrical discharge machining of silicon incorporated CVD-diamond (Si-CVD-diamond) layers were presented. For this, 10 µm thick layers were deposited on molybdenum plates by a laser-induced plasma CVD process (LaPlas-CVD). For the characterization of the coatings RAMAN- and EDX-analyses were conducted. Experiments in EDM were carried out with a tungsten carbide tool electrode with a diameter of 90 µm to investigate the micro-structuring of Si-CVD-diamond. The impact of voltage, discharge energy and tool polarity on process speed and resulting erosion geometry were analyzed. The results show that micro EDM is a suitable technology for micro-structuring of silicon incorporated CVD-diamond layers.

A high resolution electron microscopy investigation of curvature in multilayer graphite sheets

International Nuclear Information System (INIS)

Wang Zhenxia; Hu Jun; Wang Wenmin; Yu Guoqing

1998-01-01

Here the authors report a carbon sample generated by ultrasonic wave high oriented pyrolytic graphite (HOPG) in ethanol, water or ethanol-water mixed solution. High resolution transmission electron microscopy (HRTEM) revealed many multilayer graphite sheets with a total curved angle that is multiples of θ 0 (= 30 degree C). Close examination of the micrographs showed that the curvature is accomplished by bending the lattice planes. A possible explanation for the curvature in multilayer graphite sheets is discussed based on the conformation of graphite symmetry axes and the formation of sp 3 -like line defects in the sp 2 graphitic network

HIGH SPEED RAILWAY LINES – FUTURE PART OF CZECH RAILWAY NETWORK?

Directory of Open Access Journals (Sweden)

Lukáš Týfa

2017-08-01

Full Text Available The paper first describes high speed rail generally and explains the relationship between high speed and conventional railway networks (according to the vehicle types in operation on the network. The core of the paper is comprised of the methodology for choosing the best route for a railway line and its application to the high speed railway connection Praha – Brno. The Algorithm used assumes the existence of more route proposals, which could be different in terms of the operational conception, line routing or types of vehicles used. The optimal variant is the one with the lowest daily cost, which includes infrastructure and vehicle costs; investment and operational costs. The results from applying this model confirmed the assumption, that a dedicated high speed railway line, only for high speed trains, has the same or lower investment costs than a line for both high speed and conventional trains. Furthermore, a dedicated high line also has a lower cost for infrastructure maintenance but a higher cost for buying high speed multiple units.

Proposal of a high rigidity and high speed rotating mechanism using a new concept hydrodynamic bearing in X-ray tube for high speed computed tomography

International Nuclear Information System (INIS)

Hattori, Hitoshi; Fukushima, Harunobu; Yoshii, Yasuo; Nakamuta, Hironori; Iwase, Mitsuo; Kitade, Koichi

2009-01-01

In this paper, a high rigidity and high speed rotating mechanism using a new concept hydrodynamic bearing in X-ray tube for high speed computed tomography is proposed. In order to obtain both the stability and the high load carrying capacity, the hydrodynamic bearing lubricated by liquid metal (Gallium alloy), named as the hybrid hydrodynamic bearing generates the lubricating film by wedge effect on the plane region between the spiral grooves under high loading condition. The parallelism between the bearing and the rotating body can be secured by optimizing the rigidity distribution of stationary shaft in the proposed rotating mechanism. By carrying out the fundamental design by numerical analyses, it has been made clear that the hybrid hydrodynamic bearing and the rotating mechanism are suitable for the X-ray tube used in the CT with ever-increasingly scanning speed. (author)

Application of Fabry-Perot velocimeter to high-speed experiments

International Nuclear Information System (INIS)

Chaw, H.H.; McMillan, C.F.; Osher, J.E.

1988-01-01

The Fabry-Perot (F-P) velocimeter is a useful instrument for measuring the velocity of objects at speeds ranging from fractions of a kilometer per second to a few tens of kilometers per second and up. Because of its immunity to electromagnetic interference and its velocity resolution, it has become the prime diagnostic tool in our electric-gun facility. Examples of its application to high speed experiments are discussed, including: electric-gun flyer studies, spallation of materials under high-speed impact, momentum-transfer studies, pressure pulse created by high-velocity impact, and detonation-wave studies in high-explosive experiments

Application of polarization in high speed, high contrast inspection

Science.gov (United States)

Novak, Matthew J.

2017-08-01

Industrial optical inspection often requires high speed and high throughput of materials. Engineers use a variety of techniques to handle these inspection needs. Some examples include line scan cameras, high speed multi-spectral and laser-based systems. High-volume manufacturing presents different challenges for inspection engineers. For example, manufacturers produce some components in quantities of millions per month, per week or even per day. Quality control of so many parts requires creativity to achieve the measurement needs. At times, traditional vision systems lack the contrast to provide the data required. In this paper, we show how dynamic polarization imaging captures high contrast images. These images are useful for engineers to perform inspection tasks in some cases where optical contrast is low. We will cover basic theory of polarization. We show how to exploit polarization as a contrast enhancement technique. We also show results of modeling for a polarization inspection application. Specifically, we explore polarization techniques for inspection of adhesives on glass.

High speed network sampling

OpenAIRE

Rindalsholt, Ole Arild

2005-01-01

Master i nettverks- og systemadministrasjon Classical Sampling methods play an important role in the current practice of Internet measurement. With today’s high speed networks, routers cannot manage to generate complete Netflow data for every packet. They have to perform restricted sampling. This thesis summarizes some of the most important sampling schemes and their applications before diving into an analysis on the effect of sampling Netflow records.

High-{Tc} superconducting antenna-coupled microbolometer on silicon

Energy Technology Data Exchange (ETDEWEB)

Rice, J.P.; Grossman, E.N.; Borcherdt, L.J.; Rudman, D.A. [National Inst. of Standards and Technology, Boulder, CO (United States). Cryoelectronic Metrology Group

1994-12-31

A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-{Tc} superconductor YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 {times} 10{sup {minus}6} W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 {micro}s, a responsivity in the 1,000 V/W range, and a noise-equivalent power (NEP) in the 10{sup {minus}12} W/Hz{sup 1/2} range at 1,000 Hz.

Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

International Nuclear Information System (INIS)

Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

2011-01-01

Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

A Reuse Evaluation for Solar-Cell Silicon Wafers via Shift Revolution and Tool Rotation Using Magnetic Assistance in Ultrasonic Electrochemical Micromachining

Directory of Open Access Journals (Sweden)

P. S. Pa

2013-01-01

Full Text Available A new reuse fabrication using a tool module with rotation and revolution through a process of magnetic assistance in ultrasonic electrochemical micromachining (UEMM for removal of the surface layers from silicon wafers of solar cells is demonstrated. The target of the proposed reuse fabrication method is to replace the current approach, which uses strong acid and grinding and may damage the physical structure of silicon wafers and pollute to the environment. A precisely engineered clean production approach to removal of surface microstructure layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution and cost. The high revolution speed of the shift with the high rotation speed of the designed tool increases the discharge mobility and improves the removal effect associated with the high feed rate of the workpiece. High frequency and high power of ultrasonic with large electrolyte flow rate and high magnetic strengths with a small distance between the two magnets provide a large discharge effect and good removal; only a short period of time is required to remove the epoxy film and Si3N4 layer easily and cleanly.

High Speed On-Wafer Characterization Laboratory

Data.gov (United States)

Federal Laboratory Consortium — At the High Speed On-Wafer Characterization Laboratory, researchers characterize and model devices operating at terahertz (THz) and millimeter-wave frequencies. The...

Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

DEFF Research Database (Denmark)

Soppe, W.; Haug, F.-J.; Couty, P.

2011-01-01

Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

High-speed Maglev studies in Canada

International Nuclear Information System (INIS)

Atherton, D.L.; Eastham, A.R.

1974-01-01

This paper reports on Canadian studies of superconducting magnetic levitation and variable-speed linear synchronous motor propulsion for high-speed inter-city guided ground transport. Levitation is obtained by the interaction of vehicle-mounted superconducting magnets and the eddy currents induced in aluminium strip conductors on the guideway. Non-contact propulsion by linear synchronous motor (LSM) is obtained by using vehicle-borne superconducting magnets and powered guideway coils. A suggested guidance scheme uses a flat guideway with 'null-flux' loops overlying the LSM windings. The propulsion magnets interact with the loops and the edges of the levitation strips to provide lateral stabilization. The test facility is a 7.6m wheel, rotating with a peripheral speed of 33m/s. (author)

High-speed cryptography and cryptanalysis

NARCIS (Netherlands)

Schwabe, P.

2011-01-01

Modern digital communication relies heavily on cryptographic protection to ensure data integrity and privacy. In order to deploy state-of-the art cryptographic primitives and protocols in real-world scenarios, one needs to highly optimize software for both speed and security. This requires careful

Advancing high-speed rail policy in the United States.

Science.gov (United States)

2012-06-01

This report builds on a review of international experience with high-speed rail projects to develop recommendations for a High-speed rail policy framework for the United States. The international review looked at the experience of Korea, Taiwan, Chin...

Strong quantum-confined stark effect in germanium quantum-well structures on silicon

International Nuclear Information System (INIS)

Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.

2006-01-01

Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)

Assessment of rural soundscapes with high-speed train noise.

Science.gov (United States)

Lee, Pyoung Jik; Hong, Joo Young; Jeon, Jin Yong

2014-06-01

In the present study, rural soundscapes with high-speed train noise were assessed through laboratory experiments. A total of ten sites with varying landscape metrics were chosen for audio-visual recording. The acoustical characteristics of the high-speed train noise were analyzed using various noise level indices. Landscape metrics such as the percentage of natural features (NF) and Shannon's diversity index (SHDI) were adopted to evaluate the landscape features of the ten sites. Laboratory experiments were then performed with 20 well-trained listeners to investigate the perception of high-speed train noise in rural areas. The experiments consisted of three parts: 1) visual-only condition, 2) audio-only condition, and 3) combined audio-visual condition. The results showed that subjects' preference for visual images was significantly related to NF, the number of land types, and the A-weighted equivalent sound pressure level (LAeq). In addition, the visual images significantly influenced the noise annoyance, and LAeq and NF were the dominant factors affecting the annoyance from high-speed train noise in the combined audio-visual condition. In addition, Zwicker's loudness (N) was highly correlated with the annoyance from high-speed train noise in both the audio-only and audio-visual conditions. © 2013.

Silicon Valley: Planet Startup : Disruptive Innovation, Passionate Entrepreneurship & High-tech Startups

NARCIS (Netherlands)

dr. A. Maas; Dr. P. Ester

2016-01-01

For decades now, Silicon Valley has been the home of the future. It's the birthplace of the world's most successful high-tech companies-including Apple, Yahoo, Google, Facebook, Twitter, and many more. So what's the secret? What is it about Silicon Valley that fosters entrepreneurship and

High-speed imaging of explosive eruptions: applications and perspectives

Science.gov (United States)

Taddeucci, Jacopo; Scarlato, Piergiorgio; Gaudin, Damien; Capponi, Antonio; Alatorre-Ibarguengoitia, Miguel-Angel; Moroni, Monica

2013-04-01

Explosive eruptions, being by definition highly dynamic over short time scales, necessarily call for observational systems capable of relatively high sampling rates. "Traditional" tools, like as seismic and acoustic networks, have recently been joined by Doppler radar and electric sensors. Recent developments in high-speed camera systems now allow direct visual information of eruptions to be obtained with a spatial and temporal resolution suitable for the analysis of several key eruption processes. Here we summarize the methods employed to gather and process high-speed videos of explosive eruptions, and provide an overview of the several applications of these new type of data in understanding different aspects of explosive volcanism. Our most recent set up for high-speed imaging of explosive eruptions (FAMoUS - FAst, MUltiparametric Set-up,) includes: 1) a monochrome high speed camera, capable of 500 frames per second (fps) at high-definition (1280x1024 pixel) resolution and up to 200000 fps at reduced resolution; 2) a thermal camera capable of 50-200 fps at 480-120x640 pixel resolution; and 3) two acoustic to infrasonic sensors. All instruments are time-synchronized via a data logging system, a hand- or software-operated trigger, and via GPS, allowing signals from other instruments or networks to be directly recorded by the same logging unit or to be readily synchronized for comparison. FAMoUS weights less than 20 kg, easily fits into four, hand-luggage-sized backpacks, and can be deployed in less than 20' (and removed in less than 2', if needed). So far, explosive eruptions have been recorded in high-speed at several active volcanoes, including Fuego and Santiaguito (Guatemala), Stromboli (Italy), Yasur (Vanuatu), and Eyjafiallajokull (Iceland). Image processing and analysis from these eruptions helped illuminate several eruptive processes, including: 1) Pyroclasts ejection. High-speed videos reveal multiple, discrete ejection pulses within a single Strombolian

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

Energy Technology Data Exchange (ETDEWEB)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

2017-03-15

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

High-speed microjet generation using laser-induced vapor bubbles

Science.gov (United States)

Oudalov, Nikolai; Tagawa, Yoshiyuki; Peters, Ivo; Visser, Claas-Willem; van der Meer, Devaraj; Prosperetti, Andrea; Sun, Chao; Lohse, Detlef

2011-11-01

The generation and evolution of microjets are studied both experimentally and numerically. The jets are generated by focusing a laser pulse into a microscopic capillary tube (~50 μm) filled with water-based red dye. A vapor bubble is created instantly after shooting the laser (<1 μs), sending out a shockwave towards the curved free surface at which the high-speed microjet forms. The process of jet formation is captured using high-speed recordings at 1.0 × 106 fps. The velocity of the microjets can reach speeds of ~850 m/s while maintaining a very sharp geometry. The high-speed recordings enable us to study the effect of several parameters on the jet velocity, e.g. the absorbed energy and the distance between the laser spot and the free surface.The results show a clear dependence on these variables, even for supersonic speeds. Comparisons with numerical simulations confirm the nature of these dependencies.

High Surface Area of Porous Silicon Drives Desorption of Intact Molecules

Science.gov (United States)

Northen, Trent R.; Woo, Hin-Koon; Northen, Michael T.; Nordström, Anders; Uritboonthail, Winnie; Turner, Kimberly L.; Siuzdak, Gary

2007-01-01

The surface structure of porous silicon used in desorption/ionization on porous silicon (DIOS) mass analysis is known to play a primary role in the desorption/ionization (D/I) process. In this study, mass spectrometry and scanning electron microscopy (SEM) are used to examine the correlation between intact ion generation with surface ablation, and surface morphology. The DIOS process is found to be highly laser energy dependent and correlates directly with the appearance of surface ions (Sin+ and OSiH+). A threshold laser energy for DIOS is observed (10 mJ/cm2), which supports that DIOS is driven by surface restructuring and is not a strictly thermal process. In addition, three DIOS regimes are observed which correspond to surface restructuring and melting. These results suggest that higher surface area silicon substrates may enhance DIOS performance. A recent example which fits into this mechanism is silicon nanowires surface which have a high surface energy and concomitantly requires lower laser energy for analyte desorpton. PMID:17881245

A III-V nanowire channel on silicon for high-performance vertical transistors.

Science.gov (United States)

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Radiation-hard silicon photonics for high energy physics and beyond

CERN Multimedia

CERN. Geneva

2016-01-01

Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

High speed railway track dynamics models, algorithms and applications

CERN Document Server

Lei, Xiaoyan

2017-01-01

This book systematically summarizes the latest research findings on high-speed railway track dynamics, made by the author and his research team over the past decade. It explores cutting-edge issues concerning the basic theory of high-speed railways, covering the dynamic theories, models, algorithms and engineering applications of the high-speed train and track coupling system. Presenting original concepts, systematic theories and advanced algorithms, the book places great emphasis on the precision and completeness of its content. The chapters are interrelated yet largely self-contained, allowing readers to either read through the book as a whole or focus on specific topics. It also combines theories with practice to effectively introduce readers to the latest research findings and developments in high-speed railway track dynamics. It offers a valuable resource for researchers, postgraduates and engineers in the fields of civil engineering, transportation, highway & railway engineering.

Plasma-Assisted Chemistry in High-Speed Flow

International Nuclear Information System (INIS)

Leonov, Sergey B.; Yarantsev, Dmitry A.; Napartovich, Anatoly P.; Kochetov, Igor V.

2007-01-01

Fundamental problems related to the high-speed combustion are analyzed. The result of plasma-chemical modeling is presented as a motivation of experimental activity. Numerical simulations of the effect of uniform non-equilibrium discharge on the premixed hydrogen and ethylene-air mixture in supersonic flow demonstrate an advantage of such a technique over a heating. Experimental results on multi-electrode non-uniform discharge maintenance behind wallstep and in cavity of supersonic flow are presented. The model test on hydrogen and ethylene ignition is demonstrated at direct fuel injection to low-temperature high-speed airflow

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Science.gov (United States)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

High Speed Photomicrography

Science.gov (United States)

Hyzer, William G.

1983-03-01

One of the most challenging areas in applying high-speed photography and videography in the plant and laboratory is in the recording of rapid events at macro and microscopic scales. Depth of field, exposure efficiency, working distance, and required exposure time are all reduced as optical magnification is increased, which severely taxes the skill and ingenuity of workers interested in recording any fast moving phenomena through the microscope or with magnifying lenses. This paper defines the problems inherent in photographing within macro and microscopic ranges and offers a systematic approach to optimizing the selection of equipment and choice of applicable techniques.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

International Nuclear Information System (INIS)

Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

2010-01-01

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

2010-02-15

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

Science.gov (United States)

Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

2018-04-01

Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

Material requirements for the High Speed Civil Transport

Science.gov (United States)

Stephens, Joseph R.; Hecht, Ralph J.; Johnson, Andrew M.

1993-01-01

Under NASA-sponsored High Speed Research (HSR) programs, the materials and processing requirements have been identified for overcoming the environmental and economic barriers of the next generation High Speed Civil Transport (HSCT) propulsion system. The long (2 to 5 hours) supersonic cruise portion of the HSCT cycle will place additional durability requirements on all hot section engine components. Low emissions combustor designs will require high temperature ceramic matrix composite liners to meet an emission goal of less than 5g NO(x) per Kg fuel burned. Large axisymmetric and two-dimensional exhaust nozzle designs are now under development to meet or exceed FAR 36 Stage III noise requirements, and will require lightweight, high temperature metallic, intermetallic, and ceramic matrix composites to reduce nozzle weight and meet structural and acoustic component performance goals. This paper describes and discusses the turbomachinery, combustor, and exhaust nozzle requirements of the High Speed Civil Transport propulsion system.

Monolithic amorphous silicon modules on continuous polymer substrate. Final subcontract report, 9 January 1991--14 April 1991

Energy Technology Data Exchange (ETDEWEB)

Grimmer, D.P. [Iowa Thin Film Technologies, Inc., Ames, IA (US)

1992-03-01

This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

High-Speed Sealift Technology Development Plan

National Research Council Canada - National Science Library

2002-01-01

.... The purpose of the project was to define the technology investments required to enable development of the high-speed commercial and military ships needed to provide realistic future mission capabilities...

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

International Nuclear Information System (INIS)

Xiao-Dan, Zhang; He, Zhang; Chang-Chun, Wei; Jian, Sun; Guo-Fu, Hou; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

2010-01-01

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated

Development of large area, high efficiency amorphous silicon solar cell

Energy Technology Data Exchange (ETDEWEB)

Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

1996-02-01

The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

A fault-tolerant addressable spin qubit in a natural silicon quantum dot

Science.gov (United States)

Takeda, Kenta; Kamioka, Jun; Otsuka, Tomohiro; Yoneda, Jun; Nakajima, Takashi; Delbecq, Matthieu R.; Amaha, Shinichi; Allison, Giles; Kodera, Tetsuo; Oda, Shunri; Tarucha, Seigo

2016-01-01

Fault-tolerant quantum computing requires high-fidelity qubits. This has been achieved in various solid-state systems, including isotopically purified silicon, but is yet to be accomplished in industry-standard natural (unpurified) silicon, mainly as a result of the dephasing caused by residual nuclear spins. This high fidelity can be achieved by speeding up the qubit operation and/or prolonging the dephasing time, that is, increasing the Rabi oscillation quality factor Q (the Rabi oscillation decay time divided by the π rotation time). In isotopically purified silicon quantum dots, only the second approach has been used, leaving the qubit operation slow. We apply the first approach to demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet that is optimally designed for fast spin control. This optimized design allows access to Rabi frequencies up to 35 MHz, which is two orders of magnitude greater than that achieved in previous studies. We find the optimum Q = 140 in such high-frequency range at a Rabi frequency of 10 MHz. This leads to a qubit fidelity of 99.6% measured via randomized benchmarking, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum dot–based qubits. This result can inspire contributions to quantum computing from industrial communities. PMID:27536725

Diagnostics of high-speed streams and coronal holes using geomagnetic pulsations

International Nuclear Information System (INIS)

Bol'shakova, O.V.; Troitskaya, V.A.

1980-01-01

In order to study the relations of high-speed solar wind streams and coronal holes analyzed are the parameters of geomagnetic pulsations of the Rs3 type and of high-speed streams at the decrease branch and in the minimum of solar activity. On the basis of the analysis of exciting pulsation regime determined are the differences in characteristics of high-speed stream properties. Presented are the graphical distributions of a number of occurrances of high-speed streams, coronal holes and pure regimes of Rs3R pulsations in several sections of 1973 in the Sun rotations of N1903-1919 and of the change of solar wind velocity while passing through the high-speed streams. It is found that Rs3R occurrance can serve an indicator of the high-speed flux connection with the large equatorial coronal hole. On the basis of the analysis of exciting pulsation properties determined are the differences in the stream characteristics. However the preliminary estimates permit to adopt neither the first nor the second of the existing hypotheses on the sourse of formation of high-speed streams

Talc-silicon glass-ceramic waste forms for immobilization of high- level calcined waste

International Nuclear Information System (INIS)

Vinjamuri, K.

1993-06-01

Talc-silicon glass-ceramic waste forms are being evaluated as candidates for immobilization of the high level calcined waste stored onsite at the Idaho Chemical Processing Plant. These glass-ceramic waste forms were prepared by hot isostatically pressing a mixture of simulated nonradioactive high level calcined waste, talc, silicon and aluminum metal additives. The waste forms were characterized for density, chemical durability, and glass and crystalline phase compositions. The results indicate improved density and chemical durability as the silicon content is increased

Optimal design of high-speed loading spindle based on ABAQUS

Science.gov (United States)

Yang, Xudong; Dong, Yu; Ge, Qingkuan; Yang, Hai

2017-12-01

The three-dimensional model of high-speed loading spindle is established by using ABAQUS’s modeling module. A finite element analysis model of high-speed loading spindle was established by using spring element to simulate bearing boundary condition. The static and dynamic performance of the spindle structure with different specifications of the rectangular spline and the different diameter neck of axle are studied in depth, and the influence of different spindle span on the static and dynamic performance of the high-speed loading spindle is studied. Finally, the optimal structure of the high-speed loading spindle is obtained. The results provide a theoretical basis for improving the overall performance of the test-bed

PULSED MODE LASER CUTTING OF SHEETS FOR TAILORED BLANKS

DEFF Research Database (Denmark)

Bagger, Claus; Olsen, Flemming Ove

1999-01-01

This paper describes how the laser cutting process can be optimised in such a way that the cut sheets can subsequently be used to laser weld tailored blanks. In a number of systematic laboratory experiments the effect of cutting speed, assist gas pressure, average laser power and pulse energy...... item for parameter optimisation of laser cut sheets used for tailored blanks. It was concluded that high quality cut edges with a squareness as small as 0.015 mm may be obtained. Such edges are well suited for subsequent laser welding....... was analysed. For quality assessment the squareness, roughness and dross attachment of laser cut blanks were measured. In all tests, the medium strength steel GA 260 with a thickness of 1.8 mm was used. In this work it has been successfully demonstrated that the squareness of a cut can be used as a quality...

Comprehensive surface treatment of high-speed steel tool

Science.gov (United States)

Fedorov, Sergey V.; Aleshin, Sergey V.; Swe, Min Htet; Abdirova, Raushan D.; Kapitanov, Alexey V.; Egorov, Sergey B.

2018-03-01

One of the promising directions of hardening of high-speed steel tool is the creation on their surface of the layered structures with the gradient of physic-chemical properties between the wear-resistant coatings to the base material. Among the methods of such surface modification, a special process takes place based on the use of pulsed high-intensity charged particle beams. The high speed of heating and cooling allows structural-phase transformations in the surface layer, which cannot be realized in a stationary mode. The treatment was conducted in a RITM-SP unit, which constitutes a combination of a source of low-energy high-current electron beams "RITM" and two magnetron spraying systems on a single vacuum chamber. The unit enables deposition of films on the surface of the desired product and subsequent liquid-phase mixing of materials of the film and the substrate by an intense pulse electron beam. The article discusses features of the structure of the subsurface layer of high-speed steel M2, modified by surface alloying of a low-energy high-current electron beam, and its effect on the wear resistance of the tool when dry cutting hard to machine Nickel alloy. A significant decrease of intensity of wear of high-speed steel with combined treatment happens due to the displacement of the zone of wear and decrease the radius of rounding of the cutting edge because of changes in conditions of interaction with the material being treated.

Intermontane eolian sand sheet development, Upper Tulum Valley, central-western Argentina

Directory of Open Access Journals (Sweden)

Patrick Francisco Fuhr Dal' Bó

Full Text Available ABSTRACTThe intermontane Upper Tulum eolian sand sheet covers an area of ca. 125 km² at north of the San Juan Province, central-western Argentina. The sand sheet is currently an aggrading system where vegetation cover, surface cementation and periodic flooding withhold the development of dunes with slipfaces. The sand sheet surface is divided into three parts according to the distribution of sedimentary features, which reflects the variation in sediment budget, water table level and periodic flooding. The central sand sheet part is the main area of eolian deposition and is largely stabilized by vegetation. The sedimentary succession is 4 m thick and records the vertical interbedding of eolian and subaqueous deposits, which have been deposited for at least 3.6 ky with sedimentation rates of 86.1 cm/ky. The construction of the sand sheet is associated with deflation of the sand-graded debris sourced by San Juan alluvial fan, which is available mainly in drier fall-winter months where water table is lower and wind speeds are periodically above the threshold velocity for sand transport. The accumulation of sedimentary bodies occurs in a stabilized eolian system where vegetation cover, thin mud veneers and surface cementation are the main agents in promoting accumulation. The preservation of the sand sheet accumulations is enabled by the progressive creation of the accommodation space in a tectonically active basin and the continuous burial of geological bodies favored by high rates of sedimentation.

High-speed railway signal trackside equipment patrol inspection system

Science.gov (United States)

Wu, Nan

2018-03-01

High-speed railway signal trackside equipment patrol inspection system comprehensively applies TDI (time delay integration), high-speed and highly responsive CMOS architecture, low illumination photosensitive technique, image data compression technique, machine vision technique and so on, installed on high-speed railway inspection train, and achieves the collection, management and analysis of the images of signal trackside equipment appearance while the train is running. The system will automatically filter out the signal trackside equipment images from a large number of the background image, and identify of the equipment changes by comparing the original image data. Combining with ledger data and train location information, the system accurately locate the trackside equipment, conscientiously guiding maintenance.

High yield silicon carbide from alkylated or arylated pre-ceramic polymer

International Nuclear Information System (INIS)

Baney, R.H.; Gaul, J.H.

1982-01-01

Alkylated or arylated methylpolysilanes which exhibit ease of handling and are used to obtain silicon carbide ceramic materials in high yields contain 0 to 60 mole percent (CH 3 ) 2 Si double bond units and 40 to 100 mole percent CH 3 Si triple bond units, wherein there is also bonded to the silicon atoms other silicon atoms and additional alkyl radicals of 1 to 4 carbon atoms or phenyl. They may be prepared by reaction of a Grignard reagent RMgX, where X is halogen and R is Csub(1-4)-alkyl or phenyl, with a starting material which is a solid at 25 0 C, and is identical to the product except that the remaining bonds on the silicon atoms are attached to another silicon atom, or a chlorine or a bromine atom. Ceramics result from heating the polysilane products to 1200 0 C, optionally with fillers. (author)

Reaction sintering of two-dimensional silicon carbide fiber-reinforced silicon carbide composite by sheet stacking method

International Nuclear Information System (INIS)

Yoshida, Katsumi; Mukai, Hideki; Imai, Masamitsu; Hashimoto, Kazuaki; Toda, Yoshitomo; Hyuga, Hideki; Kondo, Naoki; Kita, Hideki; Yano, Toyohiko

2007-01-01

Two-dimensionally plain woven SiC fiber-reinforced SiC composite has been developed by reaction sintering using a sheet stacking method in order to further increase mechanical and thermal properties of the composite and to obtain flexibility of manufacturing process of 2D woven SiC/SiC composites which can be applied to the fabrication of larger parts. In addition, sinterability and mechanical properties of the composite were investigated. In this study, relative density of the composites was about 90-93% and a dense composite could be obtained by reaction sintering using the sheet stacking method. The bulk density and maximum bending strength of SiC/SiC composite with a C/SiC weight ratio of 0.6 were higher than that of the composite with C/SiC ratios of 0.5 or 0.7. The values were 2.9 g/cm 3 and 200 MPa, respectively. However, the composites obtained in this study fractured in almost brittle manner due to the lower fiber volume fraction

Development of a process for high capacity arc heater production of silicon for solar arrays

Science.gov (United States)

Meyer, T. N.

1980-01-01

A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing

International Nuclear Information System (INIS)

Voelskow, Matthias; Skorupa, Wolfgang; Pezoldt, Joerg; Kups, Thomas

2009-01-01

High intensity light pulse irradiation of monocrystalline silicon wafers is usually accompanied by inhomogeneous surface melting. The aim of the present work is to induce homogeneous buried melting in silicon by germanium implantation and subsequent flash lamp annealing. For this purpose high dose, high energy germanium implantation has been employed to lower the melting temperature of silicon in a predetermined depth region. Subsequent flash lamp irradiation at high energy densities leads to local melting of the germanium rich buried layer, whereby the thickness of the molten layer depends on the irradiation energy density. During the cooling down epitaxial crystallization takes place resulting in a largely defect-free layer. The combination of buried melting and dopant segregation has the potential to produce unusually buried doping profiles or to create strained silicon structures.

Pulse-burst PIV in a high-speed wind tunnel

International Nuclear Information System (INIS)

Beresh, Steven; Kearney, Sean; Wagner, Justin; Guildenbecher, Daniel; Henfling, John; Spillers, Russell; Pruett, Brian; Jiang, Naibo; Slipchenko, Mikhail; Mance, Jason; Roy, Sukesh

2015-01-01

Time-resolved particle image velocimetry (TR-PIV) has been achieved in a high-speed wind tunnel, providing velocity field movies of compressible turbulence events. The requirements of high-speed flows demand greater energy at faster pulse rates than possible with the TR-PIV systems developed for low-speed flows. This has been realized using a pulse-burst laser to obtain movies at up to 50 kHz, with higher speeds possible at the cost of spatial resolution. The constraints imposed by use of a pulse-burst laser are limited burst duration of 10.2 ms and a low duty cycle for data acquisition. Pulse-burst PIV has been demonstrated in a supersonic jet exhausting into a transonic crossflow and in transonic flow over a rectangular cavity. The velocity field sequences reveal the passage of turbulent structures and can be used to find velocity power spectra at every point in the field, providing spatial distributions of acoustic modes. The present work represents the first use of TR-PIV in a high-speed ground-test facility. (paper)

Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

Science.gov (United States)

Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

2015-09-07

Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of high energy ion implantation of boron and oxygen in silicon

International Nuclear Information System (INIS)

Thevenin, P.

1991-06-01

Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

Simultaneous two-phase flow measurement of spray mixing process by means of high-speed two-color PIV

International Nuclear Information System (INIS)

Zhang, Ming; Xu, Min; Hung, David L S

2014-01-01

In this article, a novel high-speed two-color PIV optical diagnostic technique has been developed and applied to simultaneously measure the velocity flow-fields of a multi-hole spark-ignition direct injection (SIDI) fuel injector spray and its ambient gas in a high-pressure constant volume chamber. To allow for the phase discrimination between the fuel droplets and ambient gas, a special tracer-filter system was designed. Fluorescent seeding particles with Sauter mean diameter (SMD) of 4.8 µm were used to trace the gas inside the chamber. With a single high-speed Nd:YLF laser sheet (527 nm) as the incident light source, the Mie-scattering signal marked the phase of the fuel spray, while the fluorescent signal generated from the seeding particles tracked the phase of ambient gas. A high-speed camera, with an image-doubler (mounted in front of the camera lens) that divided the camera pixels into two parts focusing on the same field of view, was used to collect the Mie-scattering signal and LIF (laser induced fluorescence) signal simultaneously with two carefully selected optical filters. To accommodate the large dynamic range of velocities in the two phases (1–2 orders of magnitude difference), two separation times (dt) were introduced. This technique was successfully applied to the liquid spray and ambient gas two-phase flow measurement. The measurement accuracy was compared with those from LDV (laser Doppler velocimetry) measurement and good agreement was obtained. Ambient gas motion surrounding the fuel spray was investigated and characterized into three zones. The momentum transfer process between the fuel spray and ambient gas in each zone was analyzed. The two-phase flow interaction under various superheated conditions was investigated. A strengthened momentum transfer from the liquid spray to the ambient was observed with increased superheat degree. (paper)

Formability behavior studies on CP-Al sheets processed through the helical tool path of incremental forming process

Science.gov (United States)

Markanday, H.; Nagarajan, D.

2018-02-01

Incremental sheet forming (ISF) is a novel die-less sheet metal forming process, which can produce components directly from the CAD geometry using a CNC milling machine at less production time and cost. The formability of the sheet material used is greatly affected by the process parameters involved and tool path adopted, and the present study is aimed to investigate the influence of different process parameter values using the helical tool path strategy on the formability of a commercial pure Al and to achieve maximum formability in the material. ISF experiments for producing an 80 mm diameter axisymmetric dome were carried out on 2 mm thickness commercially pure Al sheets for different tool speeds and feed rates in a CNC milling machine with a 10 mm hemispherical forming tool. The obtained parts were analyzed for springback, amount of thinning and maximum forming depth. The results showed that when the tool speed was increased by keeping the feed rate constant, the forming depth and thinning were also increased. On contrary, when the feed rate was increased by keeping the tool speed constant, the forming depth and thinning were decreased. Springback was found to be higher when the feed rate was increased rather than the tool speed was increased.

Current sheets and pressure anisotropy in the reconnection exhaust

International Nuclear Information System (INIS)

Le, A.; Karimabadi, H.; Roytershteyn, V.; Egedal, J.; Ng, J.; Scudder, J.; Daughton, W.; Liu, Y.-H.

2014-01-01

A particle-in-cell simulation shows that the exhaust during anti-parallel reconnection in the collisionless regime contains a current sheet extending 100 inertial lengths from the X line. The current sheet is supported by electron pressure anisotropy near the X line and ion anisotropy farther downstream. Field-aligned electron currents flowing outside the magnetic separatrices feed the exhaust current sheet and generate the out-of-plane, or Hall, magnetic field. Existing models based on different mechanisms for each particle species provide good estimates for the levels of pressure anisotropy. The ion anisotropy, which is strong enough to reach the firehose instability threshold, is also important for overall force balance. It reduces the outflow speed of the plasma