A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment.

Science.gov (United States)

Wu, Zefei; Guo, Yanqing; Guo, Yuzheng; Huang, Rui; Xu, Shuigang; Song, Jie; Lu, Huanhuan; Lin, Zhenxu; Han, Yu; Li, Hongliang; Han, Tianyi; Lin, Jiangxiazi; Wu, Yingying; Long, Gen; Cai, Yuan; Cheng, Chun; Su, Dangsheng; Robertson, John; Wang, Ning

2016-02-07

The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment (RTT) method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of a solid carbon layer/copper film/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to graphene growth on SiO2/Si. The produced graphene exhibits a high carrier mobility of up to 3000 cm(2) V(-1) s(-1) at room temperature and standard half-integer quantum oscillations. Our work provides a promising simple transfer-free approach using solid carbon sources to obtain high-quality graphene for practical applications.

Interlayer quality dependent graphene spin valve

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul, 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan); Murtaza, Ghulam [Centre for Advanced Studies in Physics, Government College University, Lahore 54000 (Pakistan); Ramay, Shahid Mahmood [Physics & Astronomy Department, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

2017-01-15

It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

Interlayer quality dependent graphene spin valve

International Nuclear Information System (INIS)

Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Iqbal, Muhammad Waqas; Murtaza, Ghulam; Ramay, Shahid Mahmood

2017-01-01

It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

Reliable Exfoliation of Large-Area High-Quality Flakes of Graphene and Other Two-Dimensional Materials.

Science.gov (United States)

Huang, Yuan; Sutter, Eli; Shi, Norman N; Zheng, Jiabao; Yang, Tianzhong; Englund, Dirk; Gao, Hong-Jun; Sutter, Peter

2015-11-24

Mechanical exfoliation has been a key enabler of the exploration of the properties of two-dimensional materials, such as graphene, by providing routine access to high-quality material. The original exfoliation method, which remained largely unchanged during the past decade, provides relatively small flakes with moderate yield. Here, we report a modified approach for exfoliating thin monolayer and few-layer flakes from layered crystals. Our method introduces two process steps that enhance and homogenize the adhesion force between the outermost sheet in contact with a substrate: Prior to exfoliation, ambient adsorbates are effectively removed from the substrate by oxygen plasma cleaning, and an additional heat treatment maximizes the uniform contact area at the interface between the source crystal and the substrate. For graphene exfoliation, these simple process steps increased the yield and the area of the transferred flakes by more than 50 times compared to the established exfoliation methods. Raman and AFM characterization shows that the graphene flakes are of similar high quality as those obtained in previous reports. Graphene field-effect devices were fabricated and measured with back-gating and solution top-gating, yielding mobilities of ∼4000 and 12,000 cm(2)/(V s), respectively, and thus demonstrating excellent electrical properties. Experiments with other layered crystals, e.g., a bismuth strontium calcium copper oxide (BSCCO) superconductor, show enhancements in exfoliation yield and flake area similar to those for graphene, suggesting that our modified exfoliation method provides an effective way for producing large area, high-quality flakes of a wide range of 2D materials.

Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

Science.gov (United States)

Mania, E.; Alencar, A. B.; Cadore, A. R.; Carvalho, B. R.; Watanabe, K.; Taniguchi, T.; Neves, B. R. A.; Chacham, H.; Campos, L. C.

2017-09-01

Steady doping, added to its remarkable electronic properties, would make graphene a valuable commodity in the solar cell market, as energy power conversion could be substantially increased. Here we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (p-type) up to n ~ 2.2  ×  1013 cm-2 while providing excellent charge mobility (μ ~ 25 000 cm2 V-1 s-1). Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on graphene-talc van der Waals heterostructures, which are investigated through the electronic properties of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B  =  0.4 T) at T  =  4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping, we performed first-principles calculations of their interface structural and electronic properties. In addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is also a promising route towards controlling the band gap opening in bilayer graphene, promoting a steady n or p type doping in graphene and, eventually, providing a new path to access superconducting states in graphene, predicted to exist only at very high doping.

Enhanced catalytic hydrogenation activity of Ni/reduced graphene oxide nanocomposite prepared by a solid-state method

Science.gov (United States)

Li, Yizhao; Cao, Yali; Jia, Dianzeng

2018-01-01

A simple solid-state method has been applied to synthesize Ni/reduced graphene oxide (Ni/rGO) nanocomposite under ambient condition. Ni nanoparticles with size of 10-30 nm supported on reduced graphene oxide (rGO) nanosheets are obtained through one-pot solid-state co-reduction among nickel chloride, graphene oxide, and sodium borohydride. The Ni/rGO nanohybrid shows enhanced catalytic activity toward the reduction of p-nitrophenol (PNP) into p-aminophenol compared with Ni nanoparticles. The results of kinetic research display that the pseudo-first-order rate constant for hydrogenation reaction of PNP with Ni/rGO nanocomposite is 7.66 × 10-3 s-1, which is higher than that of Ni nanoparticles (4.48 × 10-3 s-1). It also presents superior turnover frequency (TOF, 5.36 h-1) and lower activation energy ( E a, 29.65 kJ mol-1) in the hydrogenation of PNP with Ni/rGO nanocomposite. Furthermore, composite catalyst can be magnetically separated and reused for five cycles. The large surface area and high electron transfer property of rGO support are beneficial for good catalytic performance of Ni/rGO nanocomposite. Our study demonstrates a simple approach to fabricate metal-rGO heterogeneous nanostructures with advanced functions.

Electrochemical oxidation of p-nitrophenol using graphene-modified electrodes, and a comparison to the performance of MWNT-based electrodes

International Nuclear Information System (INIS)

Arvinte, A.; Pinteala, M.; Mahosenaho, M.; Sesay, A.M.; Virtanen, V.

2011-01-01

The electrochemical oxidation of p-nitrophenol (p-NP) has been studied comparatively on a graphene modified electrode and a multiwall carbon nanotube (MWNT) electrode by using cyclic and differential pulse voltammetry. The sensors were fabricated by modifying screen-printed electrodes with graphene and MWNT nanomaterials, respectively, both dispersed in Nafion polymer. p-NP is irreversibly oxidized at +0. 9 V (vs. the Ag/AgCl) in solutions of pH 7. The height and potential of the peaks depend on pH in the range from 5 to 11. In acidic media, p-NP yields a well-defined oxidation peak at +0. 96 V which gradually increases in height with the concentration of the analyte. In case of differential pulse voltammetry in sulfuric acid solution, the sensitivity is practically the same for both electrodes. The modified electrodes display an unusually wide linear response (from 10 μM to 0. 62 mM of p-NP), with a detection limit of 0. 6 μM in case of the graphene electrode, and of 1. 3 μM in case of the MWNT electrode. (author)

Efficient etching-free transfer of high quality, large-area CVD grown graphene onto polyvinyl alcohol films

International Nuclear Information System (INIS)

Marta, Bogdan; Leordean, Cosmin; Istvan, Todor; Botiz, Ioan; Astilean, Simion

2016-01-01

Graphical abstract: - Highlights: • One-step dry transfer method of CVD grown graphene onto PVA films. • Investigation of graphene quality and number of layers of the synthesized and transferred graphene. • Promising scalability and good quality of transferred graphene onto flexible transparent polymers. - Abstract: Graphene transfer is a procedure of paramount importance for the production of graphene-based electronic devices. The transfer procedure can affect the electronic properties of the transferred graphene and can be detrimental for possible applications both due to procedure induced defects which can appear and due to scalability of the method. Hence, it is important to investigate new transfer methods for graphene that are less time consuming and show great promise. In the present study we propose an efficient, etching-free transfer method that consists in applying a thin polyvinyl alcohol layer on top of the CVD grown graphene on Cu and then peeling-off the graphene onto the polyvinyl alcohol film. We investigate the quality of the transferred graphene before and after the transfer, using Raman spectroscopy and imaging as well as optical and atomic force microscopy techniques. This simple transfer method is scalable and can lead to complete transfer of graphene onto flexible and transparent polymer support films without affecting the quality of the graphene during the transfer procedure.

Efficient etching-free transfer of high quality, large-area CVD grown graphene onto polyvinyl alcohol films

Energy Technology Data Exchange (ETDEWEB)

Marta, Bogdan; Leordean, Cosmin [Babes-Bolyai University, Interdisciplinary Research Institute in Bio-Nano-Sciences, Nanobiophotonics and Laser Microspectroscopy Center, Treboniu Laurian Str. 42, Cluj-Napoca 400271 (Romania); Istvan, Todor [Babes-Bolyai University, Faculty of Physics, Biomolecular Physics Department, M Kogalniceanu Str. 1, Cluj-Napoca 400084 (Romania); Botiz, Ioan [Babes-Bolyai University, Interdisciplinary Research Institute in Bio-Nano-Sciences, Nanobiophotonics and Laser Microspectroscopy Center, Treboniu Laurian Str. 42, Cluj-Napoca 400271 (Romania); Astilean, Simion, E-mail: simion.astilean@phys.ubbcluj.ro [Babes-Bolyai University, Interdisciplinary Research Institute in Bio-Nano-Sciences, Nanobiophotonics and Laser Microspectroscopy Center, Treboniu Laurian Str. 42, Cluj-Napoca 400271 (Romania); Babes-Bolyai University, Faculty of Physics, Biomolecular Physics Department, M Kogalniceanu Str. 1, Cluj-Napoca 400084 (Romania)

2016-02-15

Graphical abstract: - Highlights: • One-step dry transfer method of CVD grown graphene onto PVA films. • Investigation of graphene quality and number of layers of the synthesized and transferred graphene. • Promising scalability and good quality of transferred graphene onto flexible transparent polymers. - Abstract: Graphene transfer is a procedure of paramount importance for the production of graphene-based electronic devices. The transfer procedure can affect the electronic properties of the transferred graphene and can be detrimental for possible applications both due to procedure induced defects which can appear and due to scalability of the method. Hence, it is important to investigate new transfer methods for graphene that are less time consuming and show great promise. In the present study we propose an efficient, etching-free transfer method that consists in applying a thin polyvinyl alcohol layer on top of the CVD grown graphene on Cu and then peeling-off the graphene onto the polyvinyl alcohol film. We investigate the quality of the transferred graphene before and after the transfer, using Raman spectroscopy and imaging as well as optical and atomic force microscopy techniques. This simple transfer method is scalable and can lead to complete transfer of graphene onto flexible and transparent polymer support films without affecting the quality of the graphene during the transfer procedure.

Tension-controlled single-crystallization of copper foils for roll-to-roll synthesis of high-quality graphene films

Science.gov (United States)

Jo, Insu; Park, Subeom; Kim, Dongjin; San Moon, Jin; Park, Won Bae; Kim, Tae Hyeong; Hyoun Kang, Jin; Lee, Wonbae; Kim, Youngsoo; Lee, Dong Nyung; Cho, Sung-Pyo; Choi, Hyunchul; Kang, Inbyeong; Park, Jong Hyun; Lee, Jeong Soo; Hong, Byung Hee

2018-04-01

It has been known that the crystalline orientation of Cu substrates plays a crucial role in chemical vapor deposition (CVD) synthesis of high-quality graphene. In particular, Cu (1 1 1) surface showing the minimum lattice mismatch with graphene is expected to provide an ideal catalytic reactivity that can minimize the formation of defects, which also induces larger single-crystalline domain sizes of graphene. Usually, the Cu (1 1 1) substrates can be epitaxially grown on single-crystalline inorganic substrates or can be recrystallized by annealing for more than 12 h, which limits the cost and time-effective synthesis of graphene. Here, we demonstrate a new method to optimize the crystalline orientations of vertically suspended Cu foils by tension control during graphene growth, resulting in large-area recrystallization into Cu (1 1 1) surface as the applied tension activates the grain boundary energy of Cu and promotes its abnormal grain growth to single crystals. In addition, we found a clue that the formation of graphene cooperatively assists the recrystallization into Cu (1 1 1) by minimizing the surface energy of Cu. The domain sizes and charge carrier mobility of graphene grown on the single-crystalline Cu (1 1 1) are 5 times and ~50% increased, respectively, in comparison with those of graphene from Cu (1 0 0), indicating that the less lattice mismatch and the lower interaction energy between Cu (1 1 1) and graphene allows the growth of larger single-crystalline graphene with higher charge carrier mobility. Thus, we believe that our finding provides a crucial idea to design a roll-to-roll (R2R) graphene synthesis system where the tension control is inevitably involved, which would be of great importance for the continuous production of high-quality graphene in the future.

High-frequency, scaled graphene transistors on diamond-like carbon

NARCIS (Netherlands)

Wu, Y.; Lin, Y.M.; Bol, A.A.; Jenkins, K.A.; Xia, F.; Farmer, D.B.; Zu, Y.; Avouris, Ph.

2011-01-01

Owing to its high carrier mobility and saturation velocity, graphene has attracted enormous attention in recent years In particular, high-performance graphene transistors for radio-frequency (r.f.) applications are of great interest. Synthesis of large-scale graphene sheets of high quality and at

Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Cai, Tuocheng; Jia, Zhenzhao; Yan, Baoming; Yu, Dapeng; Wu, Xiaosong, E-mail: xswu@pku.edu.cn [State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China)

2015-01-05

We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the growth domain by this method is substantially increased and the thickness variation is reduced. Based on the morphology of epitaxial graphene, the role of hydrogen is revealed. It is found that hydrogen acts as a carbon etchant. It suppresses the defect formation and nucleation of graphene. It also improves the kinetics of carbon atoms via hydrocarbon species. These effects lead to increase of the domain size and the structure quality. The consequent capping effect results in smooth surface morphology and suppression of multilayer growth. Our method provides a viable route to fine tune the growth kinetics of epitaxial graphene on SiC.

High-quality graphene flakes exfoliated on a flat hydrophobic polymer

DEFF Research Database (Denmark)

Pedrinazzi, Paolo; Caridad, José M.; Mackenzie, David M. A.

2018-01-01

the environment of the graphene flake is completely changed, by encapsulating preselected flakes between hexagonal boron nitride layers. The exfoliation of clean, pristine graphene layers directly on flat polymer substrates enables high performance, supported, and non-encapsulated graphene devices for flexible...

Electrolytic exfoliation of graphite in water with multifunctional electrolytes: en route towards high quality, oxide-free graphene flakes.

Science.gov (United States)

Munuera, J M; Paredes, J I; Villar-Rodil, S; Ayán-Varela, M; Martínez-Alonso, A; Tascón, J M D

2016-02-07

Electrolytic--usually referred to as electrochemical--exfoliation of graphite in water under anodic potential holds enormous promise as a simple, green and high-yield method for the mass production of graphene, but currently suffers from several drawbacks that hinder its widespread adoption, one of the most critical being the oxidation and subsequent structural degradation of the carbon lattice that is usually associated with such a production process. To overcome this and other limitations, we introduce and implement the concept of multifunctional electrolytes. The latter are amphiphilic anions (mostly polyaromatic hydrocarbons appended with sulfonate groups) that play different relevant roles as (1) an intercalating electrolyte to trigger exfoliation of graphite into graphene flakes, (2) a dispersant to afford stable aqueous colloidal suspensions of the flakes suitable for further use, (3) a sacrificial agent to prevent graphene oxidation during exfoliation and (4) a linker to promote nanoparticle anchoring on the graphene flakes, yielding functional hybrids. The implementation of this strategy with some selected amphiphiles even furnishes anodically exfoliated graphenes of a quality similar to that of flakes produced by direct, ultrasound- or shear-induced exfoliation of graphite in the liquid phase (i.e., almost oxide- and defect-free). These high quality materials were used for the preparation of catalytically efficient graphene-Pt nanoparticle hybrids, as demonstrated by model reactions (reduction of nitroarenes). The multifunctional performance of these electrolytes is also discussed and rationalized, and a mechanistic picture of their oxidation-preventing ability is proposed. Overall, the present results open the prospect of anodic exfoliation as a competitive method for the production of very high quality graphene flakes.

Salt-assisted direct exfoliation of graphite into high-quality, large-size, few-layer graphene sheets.

Science.gov (United States)

Niu, Liyong; Li, Mingjian; Tao, Xiaoming; Xie, Zhuang; Zhou, Xuechang; Raju, Arun P A; Young, Robert J; Zheng, Zijian

2013-08-21

We report a facile and low-cost method to directly exfoliate graphite powders into large-size, high-quality, and solution-dispersible few-layer graphene sheets. In this method, aqueous mixtures of graphite and inorganic salts such as NaCl and CuCl2 are stirred, and subsequently dried by evaporation. Finally, the mixture powders are dispersed into an orthogonal organic solvent solution of the salt by low-power and short-time ultrasonication, which exfoliates graphite into few-layer graphene sheets. We find that the as-made graphene sheets contain little oxygen, and 86% of them are 1-5 layers with lateral sizes as large as 210 μm(2). Importantly, the as-made graphene can be readily dispersed into aqueous solution in the presence of surfactant and thus is compatible with various solution-processing techniques towards graphene-based thin film devices.

Growing vertical ZnO nanorod arrays within graphite: efficient isolation of large size and high quality single-layer graphene.

Science.gov (United States)

Ding, Ling; E, Yifeng; Fan, Louzhen; Yang, Shihe

2013-07-18

We report a unique strategy for efficiently exfoliating large size and high quality single-layer graphene directly from graphite into DMF dispersions by growing ZnO nanorod arrays between the graphene layers in graphite.

Synthesize and preliminary biodistribution of 99Tcm(CO)3-PNP5

International Nuclear Information System (INIS)

Chu Jinfeng; Kong Dejing; Li Bin; Wang Xuebin

2007-01-01

99 Tc m (CO) 3 -PNP5 (PNP5: bis (dimethoxypropylphosphinoethyl) ethoxyethyl- amine) is synthesized through a simple two-step procedure by ligand exchange reaction and its biological characters are studied. Labelling conditions of 99 Tc m (CO) 3 -PNP5 are optimized. Its labelling yield and radio chemical purity are all over 90% determined by TLC. The results of partition coefficient, charge character and stability studies indicate that 99 Tc m (CO) 3 -PNP5 is a lipophilic cation ligand with complex with positiue charge and good stability. Biological properties of 99 Tc m (CO) 3 -PNP5 and 99 Tc m (CO) 3 -PNP5 (T) (adding Tween) are valued contrastively in mice. The results show that 99 Tc m (CO) 3 -PNP5(T) have higher myocardial uptake, lower liver uptake, and higher heart-to-liver ratio. It indicats that the biological properties of 99 Tc m (CO) 3 -PNP5 are improved obviously by adding Tween-80. (authors)

Structural bioinformatics study of PNP from Schistosoma mansoni

International Nuclear Information System (INIS)

Silveira, Nelson Jose Freitas da; Uchoa, Hugo Brandao; Canduri, Fernanda; Pereira, Jose Henrique; Camera, Joao Carlos; Basso, Luiz Augusto; Palma, Mario Sergio; Santos, Diogenes Santiago; Filgueira de Azevedo, Walter

2004-01-01

The parasite Schistosoma mansoni lacks the de novo pathway for purine biosynthesis and depends on salvage pathways for its purine requirements. Schistosomiasis is endemic in 76 countries and territories and amongst the parasitic diseases ranks second after malaria in terms of social and economic impact and public health importance. The PNP is an attractive target for drug design and it has been submitted to extensive structure-based design. The atomic coordinates of the complex of human PNP with inosine were used as template for starting the modeling of PNP from S. mansoni complexed with inosine. Here we describe the model for the complex SmPNP-inosine and correlate the structure with differences in the affinity for inosine presented by human and S. mansoni PNPs

Large scale commercial fabrication of high quality graphene-based assays for biomolecule detection

Science.gov (United States)

Lerner, Mitchell; Gao, Yingning; Goldsmith, Brett; Barron, Francie

Large numbers of high quality graphene transistors with mobility approximately 5000 cm2 / V * s were fabricated by chemical vapor deposition and packaged into ceramic carriers with an open cavity design. The ceramic carrier is compatible with standard electronics assembly, enabling the readout of graphene properties on the benchtop without large, expensive probing systems. After chemical functionalization, these sensors demonstrate sensitivity in the pM range and selectivity to many classes of biomolecules as a three terminal liquid-gated field effect transistor. High precision measurements of protein kinetics captured using this technology, commercially known as AGILE R100, are comparable and can exceed the capabilities of state-of-the-art biomolecule characterization tools. Recently published in Sensors and Actuators B

Fabrication of transparent, tough, and conductive shape-memory polyurethane films by incorporating a small amount of high-quality graphene.

Science.gov (United States)

Jung, Yong Chae; Kim, Jin Hee; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Terrones, Mauricio; Dresselhaus, Mildred S

2012-04-23

We report a mechanically strong, electrically and thermally conductive, and optically transparent shape-memory polyurethane composite which was fabricated by introducing a small amount (0.1 wt%) of high-quality graphene as a filler. Geometrically large (≈4.6 μm(2)), but highly crystallized few-layer graphenes, verified by Raman spectroscopy and transmission electron microscopy, were prepared by the sonication of expandable graphite in an organic solvent. Oxygen- containing functional groups at the edge plane of graphene were crucial for an effective stress transfer from the graphene to polyurethane. Homogeneously dispersed few-layered graphene enabled polyurethane to have a high shape recovery force of 1.8 MPa cm(-3). Graphene, which is intrinsically stretchable up to 10%, will enable high-performance composites to be fabricated at relatively low cost and we thus envisage that such composites may replace carbon nanotubes for various applications in the near future. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrocatalytic Azide Oxidation Mediated by a Rh(PNP) Pincer Complex

NARCIS (Netherlands)

Rebreyend, Christophe; Gloaguen, Yann; Lutz, Martin; Van Der Vlugt, Jarl Ivar; Siewert, Inke; Schneider, Sven; Bruin, Bas De

2017-01-01

One-electron oxidation of the rhodium(I) azido complex [Rh(N3)(PNP)] (5), bearing the neutral, pyridine-based PNP ligand 2,6-bis(di-tert-butylphosphinomethyl)pyridine, leads to instantaneous and selective formation of the mononuclear rhodium(I) dinitrogen complex [Rh(N2)(PNP)]+ (9+). Interestingly,

Electrocatalytic Azide Oxidation Mediated by a Rh(PNP) Pincer Complex

NARCIS (Netherlands)

Rebreyend, C.; Gloaguen, Y.; Lutz, M.; van der Vlugt, J.I.; Siewert, I.; Schneider, S.; de Bruin, B.

2017-01-01

One-electron oxidation of the rhodium(I) azido complex [Rh(N3)(PNP)] ( 5 ), bearing the neutral, pyridine-based PNP ligand 2,6-bis(di-tert-butylphosphinomethyl)pyridine, leads to instantaneous and selective formation of the mononuclear rhodium(I) dinitrogen complex [Rh(N2)(PNP)]+ ( 9 +).

FOCUS ON GRAPHENE

International Nuclear Information System (INIS)

Peres, N M R; Ribeiro, Ricardo M

2009-01-01

Balandin Calculation of the Raman G peak intensity in monolayer graphene: role of Ward identities D M Basko Electronic transport in bilayer graphene Mikito Koshino Magnetic Kronig-Penney model for Dirac electrons in single-layer graphene M Ramezani Masir, P Vasilopoulos and F M Peeters Electrical transport in high-quality graphene pnp junctions Jairo Velasco Jr, Gang Liu, Wenzhong Bao and Chun Ning Lau Local density of states and scanning tunneling currents in graphene N M R Peres, Ling Yang and Shan-Wen Tsai Gaps and tails in graphene and graphane B Dora and K Ziegler Quasi-ferromagnet spintronics in the graphene nanodisc-lead system Motohiko Ezawa Range and correlation effects in edge disordered graphene nanoribbons Alessandro Cresti and Stephan Roche Remarks on the tight-binding model of graphene Cristina Bena and Gilles Montambaux (editorial)

Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors

International Nuclear Information System (INIS)

Witczak, S.C.; Lacoe, R.C.; Galloway, K.F.

1997-01-01

The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and lateral pnp bipolar transistors. High dose rate irradiations at elevated temperatures are more effective at simulating low dose rate degradation in the lateral pnp transistors

High-quality graphene grown on polycrystalline PtRh{sub 20} alloy foils by low pressure chemical vapor deposition and its electrical transport properties

Energy Technology Data Exchange (ETDEWEB)

Yang, He; Shen, Chengmin, E-mail: cmshen@iphy.ac.cn; Tian, Yuan; Bao, Lihong; Chen, Peng; Yang, Rong; Yang, Tianzhong; Li, Junjie; Gu, Changzhi; Gao, Hong-Jun [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2016-02-08

High-quality continuous uniform monolayer graphene was grown on polycrystalline PtRh{sub 20} alloy foils by low pressure chemical vapor deposition. The morphology of graphene was investigated by Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. Analysis results confirm that high quality single-layer graphene was fabricated on PtRh{sub 20} foil at 1050 °C using a lower flux of methane under low pressure. Graphene films were transferred onto the SiO{sub 2}/Si substrate by the bubbling transfer method. The mobility of a test field effect transistor made of the graphene grown on PtRh{sub 20} was measured and reckoned at room temperature, showing that the carrier mobility was about 4000 cm{sup 2} V{sup −1} s{sup −1}. The results indicate that desired quality of single-layer graphene grown on PtRh{sub 20} foils can be obtained by tuning reaction conditions.

Probing graphene defects and estimating graphene quality with optical microscopy

International Nuclear Information System (INIS)

Lai, Shen; Kyu Jang, Sung; Jae Song, Young; Lee, Sungjoo

2014-01-01

We report a simple and accurate method for detecting graphene defects that utilizes the mild, dry annealing of graphene/Cu films in air. In contrast to previously reported techniques, our simple approach with optical microscopy can determine the density and degree of dislocation of defects in a graphene film without inducing water-related damage or functionalization. Scanning electron microscopy, confocal Raman and atomic force microscopy, and X-ray photoelectron spectroscopy analysis were performed to demonstrate that our nondestructive approach to characterizing graphene defects with optimized thermal annealing provides rapid and comprehensive determinations of graphene quality

Synthesis and reactivity of TADDOL-based chiral Fe(II) PNP pincer complexes-solution equilibria between κ(2)P,N- and κ(3)P,N,P-bound PNP pincer ligands.

Science.gov (United States)

Holzhacker, Christian; Stöger, Berthold; Carvalho, Maria Deus; Ferreira, Liliana P; Pittenauer, Ernst; Allmaier, Günter; Veiros, Luis F; Realista, Sara; Gil, Adrià; Calhorda, Maria José; Müller, Danny; Kirchner, Karl

2015-08-07

Treatment of anhydrous FeX2 (X = Cl, Br) with 1 equiv. of the asymmetric chiral PNP pincer ligands PNP-R,TAD (R = iPr, tBu) with an R,R-TADDOL (TAD) moiety afforded complexes of the general formula [Fe(PNP)X2]. In the solid state these complexes adopt a tetrahedral geometry with the PNP ligand coordinated in κ(2)P,N-fashion, as shown by X-ray crystallography and Mössbauer spectroscopy. Magnetization studies led to a magnetic moment very close to 4.9μB reflecting the expected four unpaired d-electrons (quintet ground state). In solution there are equilibria between [Fe(κ(3)P,N,P-PNP-R,TAD)X2] and [Fe(κ(2)P,N-PNP-R,TAD)X2] complexes, i.e., the PNP-R,TAD ligand is hemilabile. At -50 °C these equilibria are slow and signals of the non-coordinated P-TAD arm of the κ(2)P,N-PNP-R,TAD ligand can be detected by (31)P{(1)H} NMR spectroscopy. Addition of BH3 to a solution of [Fe(PNP-iPr,TAD)Cl2] leads to selective boronation of the pendant P-TAD arm shifting the equilibrium towards the four-coordinate complex [Fe(κ(2)P,N-PNP-iPr,TAD(BH3))Cl2]. DFT calculations corroborate the existence of equilibria between four- and five-coordinated complexes. Addition of CO to [Fe(PNP-iPr,TAD)X2] in solution yields the diamagnetic octahedral complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)X2], which react further with Ag(+) salts in the presence of CO to give the cationic complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)2X](+). CO addition most likely takes place at the five coordinate complex [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. The mechanism for the CO addition was also investigated by DFT and the most favorable path obtained corresponds to the rearrangement of the pincer ligand first from a κ(2)P,N- to a κ(3)P,N,P-coordination mode followed by CO coordination to [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. Complexes bearing tBu substituents do not react with CO. Moreover, in the solid state none of the tetrahedral complexes are able to bind CO.

Production of High-quality Few-layer Graphene Flakes by Intercalation and Exfoliation

KAUST Repository

Alzahrani, Areej A.

2017-11-30

Graphene, a two-dimensional nanomaterial, has been given much attention since it was first isolated in 2004. Driving this intensive research effort are the unique properties of this one atom thick sheet of carbon, in particular its electrical, thermal and mechanical properties. While the technological applications proposed for graphene abound, its low-cost production in large scales is still a matter of interrogation. Simple methods to obtain few-layered graphene flakes of high structural quality are being investigated with the exfoliation of graphite taking a prominent place in this arena. From the many suggested approaches, the most promising involve the use of liquid media assisted by intercalants and shear forces acting on the basal layers of graphite. In this thesis, it is discussed how a novel method was developed to produce flakes with consistent lateral dimensions that are also few-layered and retain the expected structural and chemical characteristics of graphene. Here, the source material was a commercially available graphiteintercalated compound, also known as expandable graphite. Several exfoliation-inducing tools were investigated including the use of blenders, homogenizers, and ultrasonic processors. To aid in this process, various solvents and intercalants were explored under different reactive conditions. The more efficient approach in yielding defect-free thin flakes was the use of thermally expanded graphite in boiling dimethylformamide followed by ultrasonic processing and centrifugation. In parallel, a method to fraction the flakes as a function of their lateral size was developed. Ultimately, it was possible to obtain samples of graphene flakes with a lateral dimension of a few micrometers (<5 μm) and thickness of 1-3 nm (i.e. <10 layers).

Electronic properties of mesoscopic graphene structures: Charge confinement and control of spin and charge transport

Energy Technology Data Exchange (ETDEWEB)

Rozhkov, A.V., E-mail: arozhkov@gmail.co [Advanced Science Institute, RIKEN, Wako-shi, Saitama, 351-0198 (Japan); Institute for Theoretical and Applied Electrodynamics, Russian Academy of Sciences, 125412, Moscow (Russian Federation); Giavaras, G. [Advanced Science Institute, RIKEN, Wako-shi, Saitama, 351-0198 (Japan); Bliokh, Yury P. [Advanced Science Institute, RIKEN, Wako-shi, Saitama, 351-0198 (Japan); Department of Physics, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Freilikher, Valentin [Advanced Science Institute, RIKEN, Wako-shi, Saitama, 351-0198 (Japan); Department of Physics, Bar-Ilan University, Ramat-Gan 52900 (Israel); Nori, Franco [Advanced Science Institute, RIKEN, Wako-shi, Saitama, 351-0198 (Japan); Department of Physics, University of Michigan, Ann Arbor, MI 48109-1040 (United States)

2011-06-15

This brief review discusses electronic properties of mesoscopic graphene-based structures. These allow controlling the confinement and transport of charge and spin; thus, they are of interest not only for fundamental research, but also for applications. The graphene-related topics covered here are: edges, nanoribbons, quantum dots, pn-junctions, pnp-structures, and quantum barriers and waveguides. This review is partly intended as a short introduction to graphene mesoscopics.

Radiation effect of gate controlled lateral PNP BJTs

International Nuclear Information System (INIS)

Xi Shanbin; Zhou Dong; Lu Wu; Ren Diyuan; Wen Lin; Sun Jing; Wang Zhikuan

2012-01-01

Design and fabricate a new test structure of bipolar device: the gate controlled later PNP bipolar transistor (GCLPNP BJT), then sealed it together with the normal lateral PNP bipolar transistor which is made under the same manufacture process. Then 60 Co-γ radiation effects and annealing behaviors of these two structures are investigated. The results show that the response about base current, collector current, access base current and normalized current gain of GCLPNP bipolar transistor are almost identical to the normal one. Radiation induced defects in the GCLPNP bipolar transistor is separated quantitatively. Studying on the quantitative change of radiation induced defects in the domestic gate controlled bipolar transistor should be a useful way to research the change of radiation induced charges of normal PNP bipolar transistor. (authors)

Helium ion microscopy of graphene: beam damage, image quality and edge contrast

International Nuclear Information System (INIS)

Fox, D; Zhou, Y B; O’Neill, A; Wang, J J; Coleman, J N; Donegan, J F; Zhang, H Z; Kumar, S; Duesberg, G S

2013-01-01

A study to analyse beam damage, image quality and edge contrast in the helium ion microscope (HIM) has been undertaken. The sample investigated was graphene. Raman spectroscopy was used to quantify the disorder that can be introduced into the graphene as a function of helium ion dose. The effects of the dose on both freestanding and supported graphene were compared. These doses were then correlated directly to image quality by imaging graphene flakes at high magnification. It was found that a high magnification image with a good signal to noise ratio will introduce very significant sample damage. A safe imaging dose of the order of 10 13 He + cm −2 was established, with both graphene samples becoming highly defective at doses over 5 × 10 14 He + cm −2 . The edge contrast of a freestanding graphene flake imaged in the HIM was then compared with the contrast of the same flake observed in a scanning electron microscope and a transmission electron microscope. Very strong edge sensitivity was observed in the HIM. This enhanced edge sensitivity over the other techniques investigated makes the HIM a powerful nanoscale dimensional metrology tool, with the capability of both fabricating and imaging features with sub-nanometre resolution. (paper)

Prototype plant for nuclear process heat (PNP)

International Nuclear Information System (INIS)

Duerrfeld, R.; Kraut-Giesen, G.

1982-01-01

1. Goals: Verification of owner's interests during experimental and engineering phase of nuclear coal gasification. 2. Method: 2.1 Witnessing and evaluating of experimental results from running test facilities. 2.2 Influencing experimental program. 2.3 Participation in important meetings of PNP-project. 3. Results: From present point of view the realization of nuclear coal gasification with a nuclear high temperature reactor (HTR) in accordance with the present technical status as well as meeting the existing safety regulations seems to be feasable. R+D-work will be needed for affirmation of design. The gasification of hard coal basing on the allothermal principal has proved to be possible. The examination of the gasifier on a pilot scale is not yet done. The design work for the pilot plant should be started immediately, particularly keeping in mind the decision for erection of PNP in 1990. The calculation of production costs in comparison to autothermal gasification processes is promising better economics, if uncertainties of investment calculation are deemed to be neglectable. (orig.) [de

Tungsten oxide nanowires grown on graphene oxide sheets as high-performance electrochromic material

International Nuclear Information System (INIS)

Chang, Xueting; Sun, Shibin; Dong, Lihua; Hu, Xiong; Yin, Yansheng

2014-01-01

Graphical abstract: Electrochromic mechanism of tungsten oxide nanowires-reduced graphene oxide composite. - Highlights: • A novel inorganic-nano-carbon hybrid composite was prepared. • The hybrid composite has sandwich-like structure. • The hybrid composite exhibited high-quality electrohcromic performance. - Abstract: In this work, we report the synthesis of a novel hybrid electrochromic composite through nucleation and growth of ultrathin tungsten oxide nanowires on graphene oxide sheets using a facile solvothermal route. The competition between the growth of tungsten oxide nanowires and the reduction of graphene oxide sheets leads to the formation of sandwich-structured tungsten oxide-reduced graphene oxide composite. Due to the strongly coupled effect between the ultrathin tungsten oxide nanowires and the reduced graphene oxide nanosheets, the novel electrochromic composite exhibited high-quality electrochromic performance with fast color-switching speed, good cyclic stability, and high coloration efficiency. The present tungsten oxide-reduced graphene oxide composite represents a new approach to prepare other inorganic-reduced graphene oxide hybrid materials for electrochemical applications

High-resolution patterning of graphene by screen printing with a silicon stencil for highly flexible printed electronics.

Science.gov (United States)

Hyun, Woo Jin; Secor, Ethan B; Hersam, Mark C; Frisbie, C Daniel; Francis, Lorraine F

2015-01-07

High-resolution screen printing of pristine graphene is introduced for the rapid fabrication of conductive lines on flexible substrates. Well-defined silicon stencils and viscosity-controlled inks facilitate the preparation of high-quality graphene patterns as narrow as 40 μm. This strategy provides an efficient method to produce highly flexible graphene electrodes for printed electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors

Energy Technology Data Exchange (ETDEWEB)

CHANG,PING-CHIH; LI,N.Y.; BACA,ALBERT G.; MONIER,C.; LAROCHE,J.R.; HOU,H.Q.; REN,F.; PEARTON,S.J.

2000-08-01

The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V{sub ON}) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D. C. characteristics with a current gain ({beta}) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f{sub T} and f{sub MAX} values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

Towards understanding the E. coli PNP binding mechanism and FRET absence between E. coli PNP and formycin A.

Science.gov (United States)

Prokopowicz, Małgorzata; Greń, Bartosz; Cieśla, Joanna; Kierdaszuk, Borys

2017-11-01

The aim of this study is threefold: (1) augmentation of the knowledge of the E. coli PNP binding mechanism; (2) explanation of the previously observed 'lack of FRET' phenomenon and (3) an introduction of the correction (modified method) for FRET efficiency calculation in the PNP-FA complexes. We present fluorescence studies of the two E. coli PNP mutants (F159Y and F159A) with formycin A (FA), that indicate that the aromatic amino acid is indispensable in the nucleotide binding, additional hydroxyl group at position 159 probably enhances the strength of binding and that the amino acids pair 159-160 has a great impact on the spectroscopic properties of the enzyme. The experiments were carried out in hepes and phosphate buffers, at pH7 and 8.3. Two methods, a conventional and a modified one, that utilizes the dissociation constant, for calculations of the energy transfer efficiency (E) and the acceptor-to-donor distance (r) between FA and the Tyr (energy donor) were employed. Total difference spectra were calculated for emission spectra (λ ex 280nm, 295nm, 305nm and 313nm) for all studied systems. Time-resolved techniques allowed to conclude the existence of a specific structure formed by amino acids at positions 159 and 160. The results showed an unexpected pattern change of FRET in the mutants, when compared to the wild type enzyme and a probable presence of a structure created between 159 and 160 residue, that might influence the binding efficiency. Additionally, we confirmed the indispensable role of the modification of the FRET efficiency (E) calculation on the fraction of enzyme saturation in PNP-FA systems. Copyright © 2017 Elsevier B.V. All rights reserved.

Pnp gene modification for improved xylose utilization in Zymomonas

Science.gov (United States)

Caimi, Perry G G; Qi, Min; Tao, Luan; Viitanen, Paul V; Yang, Jianjun

2014-12-16

The endogenous pnp gene encoding polynucleotide phosphorylase in the Zymomonas genome was identified as a target for modification to provide improved xylose utilizing cells for ethanol production. The cells are in addition genetically modified to have increased expression of ribose-5-phosphate isomerase (RPI) activity, as compared to cells without this genetic modification, and are not limited in xylose isomerase activity in the absence of the pnp modification.

Highly controllable and green reduction of graphene oxide to flexible graphene film with high strength

International Nuclear Information System (INIS)

Wan, Wubo; Zhao, Zongbin; Hu, Han; Gogotsi, Yury; Qiu, Jieshan

2013-01-01

Graphical abstract: Highly controllable and green reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant. Self-assembly of the as-made CCG sheets results in a flexible CCG film, of which the tensile strength strongly depends on the deoxygenation degree of graphene sheets. - Highlights: • Graphene was synthesized by an effective and environmentally friendly approach. • We introduced a facile X-ray diffraction analysis method to investigate the reduction process from graphene oxide to graphene. • Flexible graphene films were prepared by self-assembly of the graphene sheets. • The strength of the graphene films depends on the reduction degree of graphene. - Abstract: Graphene film with high strength was fabricated by the assembly of graphene sheets derived from graphene oxide (GO) in an effective and environmentally friendly approach. Highly controllable reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant, in which the reduction process was monitored by XRD analysis and UV–vis absorption spectra. Self-assembly of the as-made CCG sheets results in a flexible CCG film. This method may open an avenue to the easy and scalable preparation of graphene film with high strength which has promising potentials in many fields where strong, flexible and electrically conductive films are highly demanded

Elucidation of the Signal Transduction Pathways Activated by the Plant Natriuretic Peptide AtPNP-A

KAUST Repository

Turek, Ilona

2014-11-01

Plant natriuretic peptides (PNPs) comprise a novel class of hormones that share some sequence similarity in the active site with their animal analogues that function as regulators of salt and water balance. A PNP present in Arabidopsis thaliana (AtPNP-A) has been assigned a role in abiotic and biotic stress responses, and the recombinant protein has been demonstrated to elicit cyclic guanosine monophosphate (cGMP)-dependent stomatal guard cell opening, regulate ion movements, and induce osmoticum-dependent water uptake. Although the importance of the hormone in maintaining ion and fluid homeostasis has been established, key components of the AtPNP-A-dependent signal transduction pathway remain unknown. Since identification of the binding partners of AtPNP-A, including its receptor(s), is fundamental to understanding the mode of its action at the molecular level, comprehensive protein-protein interaction studies, involving yeast two-hybrid screening, affinity-based assays, protein cross-linking and co-immunoprecipitation followed by mass spectrometric (MS) analyses have been performed. Several candidate binding partners of AtPNP-A identified with at least two independent methods were subsequently expressed as recombinant proteins, purified, and the specificity of their interactions with the recombinant AtPNP-A was verified using surface plasmon resonance. Several specific binary interactants of AtPNP-A were subjected to functional assays aimed at unraveling the consequences of the interactions in planta. These experiments have revealed that reactive oxygen species (ROS) are novel secondary messengers involved in the transduction of AtPNP-A signal in suspension-cultured cells of A. thaliana (Col-0). Further insight into the AtPNP-A dependent signalling events occurring in suspension-cultured cells in ROS-dependent or ROS-independent manner have been obtained from the large-scale proteomics study employing tandem mass tag (TMT) labelling followed by MS analysis to

Clean Transfer of Large Graphene Single Crystals for High-Intactness Suspended Membranes and Liquid Cells.

Science.gov (United States)

Zhang, Jincan; Lin, Li; Sun, Luzhao; Huang, Yucheng; Koh, Ai Leen; Dang, Wenhui; Yin, Jianbo; Wang, Mingzhan; Tan, Congwei; Li, Tianran; Tan, Zhenjun; Liu, Zhongfan; Peng, Hailin

2017-07-01

The atomically thin 2D nature of suspended graphene membranes holds promising in numerous technological applications. In particular, the outstanding transparency to electron beam endows graphene membranes great potential as a candidate for specimen support of transmission electron microscopy (TEM). However, major hurdles remain to be addressed to acquire an ultraclean, high-intactness, and defect-free suspended graphene membrane. Here, a polymer-free clean transfer of sub-centimeter-sized graphene single crystals onto TEM grids to fabricate large-area and high-quality suspended graphene membranes has been achieved. Through the control of interfacial force during the transfer, the intactness of large-area graphene membranes can be as high as 95%, prominently larger than reported values in previous works. Graphene liquid cells are readily prepared by π-π stacking two clean single-crystal graphene TEM grids, in which atomic-scale resolution imaging and temporal evolution of colloid Au nanoparticles are recorded. This facile and scalable production of clean and high-quality suspended graphene membrane is promising toward their wide applications for electron and optical microscopy. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and Characterization of Mass Produced High Quality Few Layered Graphene Sheets via a Chemical Method

KAUST Repository

Khenfouch, Mohammed

2014-04-01

Graphene is a two-dimensional crystal of carbon atoms arranged in a honeycomb lattice. It is a zero band gap semimetal with very unique physical and chemical properties which make it useful for many applications such as ultra-high-speed field-effect transistors, p-n junction diodes, terahertz oscillators, and low-noise electronic, NEMS and sensors. When the high quality mass production of this nanomaterial is still a big challenge, we developed a process which will be an important step to achieve this goal. Atomic Force Microscopy, Scanning Electron Microscopy, Scanning tunneling microscopy, High Resolution Transmission Electron Microscopy, X-Ray Diffraction, Raman spectroscopy, Energy Dispersive X-ray system were investigated to characterize and examine the quality of this product.

Graphene transfer process and optimization of graphene coverage

OpenAIRE

Sabki Syarifah Norfaezah; Shamsuri Shafiq Hafly; Fauzi Siti Fazlina; Chon-Ki Meghashama Lim; Othman Noraini

2017-01-01

Graphene grown on transition metal is known to be high in quality due to its controlled amount of defects and potentially used for many electronic applications. The transfer process of graphene grown on transition metal to a new substrate requires optimization in order to ensure that high graphene coverage can be obtained. In this work, an improvement in the graphene transfer process is performed from graphene grown on copper foil. It has been observed that the graphene coverage is affected b...

Control of the nucleation and quality of graphene grown by low-pressure chemical vapor deposition with acetylene

International Nuclear Information System (INIS)

Yang, Meng; Sasaki, Shinichirou; Suzuki, Ken; Miura, Hideo

2016-01-01

Graphical abstract: - Highlights: • For the first time, we succeeded in the LPCVD growth of monolayer graphene using acetylene as the precursor gas. • The growth rate is very high when acetylene is used as the source gas. Our process has exhibited the potential to shorten the growth time of CVD graphene. • We found that the domain size, defects density, layer number and the sheet resistance of graphene can be changed by changing the acetylene flow rates. • We found that it is also possible to form bilayer graphene using acetylene. However, further study are necessary to reduce the defects density. - Abstract: Although many studies have reported the chemical vapor deposition (CVD) growth of large-area monolayer graphene from methane, synthesis of graphene using acetylene as the source gas has not been fully explored. In this study, the low-pressure CVD (LPCVD) growth of graphene from acetylene was systematically investigated. We succeeded in regulating the domain size, defects density, layer number and the sheet resistance of graphene by changing the acetylene flow rates. Scanning electron microscopy and Raman spectroscopy were employed to confirm the layer number, uniformity and quality of the graphene films. It is found that a low flow rate of acetylene (0.28 sccm) is required to form high-quality monolayer graphene in our system. On the other hand, the high acetylene flow rate (7 sccm) will induce the growth of the bilayer graphene domains with high defects density. On the basis of selected area electron diffraction (SAED) pattern, the as-grown monolayer graphene domains were analyzed to be polycrystal. We also discussed the relation between the sheet resistacne and defects density in graphene. Our results provide great insights into the understanding of the CVD growth of monolayer and bilayer graphene from acetylene.

Control of the nucleation and quality of graphene grown by low-pressure chemical vapor deposition with acetylene

Energy Technology Data Exchange (ETDEWEB)

Yang, Meng, E-mail: youmou@rift.mech.tohoku.ac.jp [Department of Nanomechanics, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Sasaki, Shinichirou [Department of Nanomechanics, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Suzuki, Ken; Miura, Hideo [Fracture and Reliability Research Institute, Tohoku University, Sendai 980-8579 (Japan)

2016-03-15

Graphical abstract: - Highlights: • For the first time, we succeeded in the LPCVD growth of monolayer graphene using acetylene as the precursor gas. • The growth rate is very high when acetylene is used as the source gas. Our process has exhibited the potential to shorten the growth time of CVD graphene. • We found that the domain size, defects density, layer number and the sheet resistance of graphene can be changed by changing the acetylene flow rates. • We found that it is also possible to form bilayer graphene using acetylene. However, further study are necessary to reduce the defects density. - Abstract: Although many studies have reported the chemical vapor deposition (CVD) growth of large-area monolayer graphene from methane, synthesis of graphene using acetylene as the source gas has not been fully explored. In this study, the low-pressure CVD (LPCVD) growth of graphene from acetylene was systematically investigated. We succeeded in regulating the domain size, defects density, layer number and the sheet resistance of graphene by changing the acetylene flow rates. Scanning electron microscopy and Raman spectroscopy were employed to confirm the layer number, uniformity and quality of the graphene films. It is found that a low flow rate of acetylene (0.28 sccm) is required to form high-quality monolayer graphene in our system. On the other hand, the high acetylene flow rate (7 sccm) will induce the growth of the bilayer graphene domains with high defects density. On the basis of selected area electron diffraction (SAED) pattern, the as-grown monolayer graphene domains were analyzed to be polycrystal. We also discussed the relation between the sheet resistacne and defects density in graphene. Our results provide great insights into the understanding of the CVD growth of monolayer and bilayer graphene from acetylene.

High quality graphene synthesized by atmospheric pressure CVD on copper foil

OpenAIRE

Trinsoutrot, Pierre; Rabot, Caroline; Vergnes, Hugues; Delamoreanu, Alexandru; Zenasni, Aziz; Caussat, Brigitte

2013-01-01

International audience; Graphene was synthesized at 1000 °C by Atmospheric Pressure Chemical Vapor Deposition on copper foil from methane diluted in argon and hydrogen. The influence of the main synthesis parameters was studied on 2 × 2 cm2 foils in order to obtain continuous monolayer graphenewithout crystalline defect. The uniformity, crystal quality and number of layers of graphenewere analyzed by Raman spectroscopy and Scanning Electronic Microscopy. First, an increase of the annealing pr...

Delaminated Transfer of CVD Graphene

Science.gov (United States)

Clavijo, Alexis; Mao, Jinhai; Tilak, Nikhil; Altvater, Michael; Andrei, Eva

Single layer graphene is commonly synthesized by dissociation of a carbonaceous gas at high temperatures in the presence of a metallic catalyst in a process known as Chemical Vapor Deposition or CVD. Although it is possible to achieve high quality graphene by CVD, the standard transfer technique of etching away the metallic catalyst is wasteful and jeopardizes the quality of the graphene film by contamination from etchants. Thus, development of a clean transfer technique and preservation of the parent substrate remain prominent hurdles to overcome. In this study, we employ a copper pretreatment technique and optimized parameters for growth of high quality single layer graphene at atmospheric pressure. We address the transfer challenge by utilizing the adhesive properties between a polymer film and graphene to achieve etchant-free transfer of graphene films from a copper substrate. Based on this concept we developed a technique for dry delamination and transferring of graphene to hexagonal boron nitride substrates, which produced high quality graphene films while at the same time preserving the integrity of the copper catalyst for reuse. DOE-FG02-99ER45742, Ronald E. McNair Postbaccalaureate Achievement Program.

The Preparation of Graphene

Institute of Scientific and Technical Information of China (English)

Chen Yanyan

2015-01-01

Graphene has unique structure and possesses excellent physical and chemical properties, and it has received a great deal of attention in related research fields. The quality, quantity and application of graphene are related to its preparation methods. At present the bottleneck of graphene research is that both high-quality and large quantity of graphene could not be obtained simultaneously and the reason is that the basic mechanism of graphene formation has mot been wel understood.

Improvement of the quality of graphene-capped InAs/GaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Othmen, Riadh, E-mail: othmenriadh@yahoo.fr; Rezgui, Kamel; Ajlani, Hosni; Oueslati, Meherzi [Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus, 2092 El Manar Tunis (Tunisia); Cavanna, Antonella; Madouri, Ali [CNRS/LPN, Route de Nozay, F-91460 Marcoussis (France); Arezki, Hakim; Gunes, Fethullah [Laboratoire de Génie Electrique de Paris, 11, rue Joliot Curie Plateau de Moulon, 91192 Gif sur Yvette (France)

2014-06-07

In this paper, we study the transfer of graphene onto InAs/GaAs quantum dots (QDs). The graphene is first grown on Cu foils by chemical vapor deposition and then polymer Polymethyl Methacrylate (PMMA) is deposited on the top of graphene/Cu. High quality graphene sheet has been obtained by lowering the dissolving rate of PMMA using vapor processing. Uncapped as well as capped graphene InAs/GaAs QDs have been studied using optical microscopy, scanning electron microscopy, and Raman spectroscopy. We gather from this that the average shifts Δω of QDs Raman peaks are reduced compared to those previously observed in graphene and GaAs capped QDs. The encapsulation by graphene makes the indium atomic concentration intact in the QDs by the reduction of the strain effect of graphene on QDs and the migration of In atoms towards the surface. This gives us a new hetero-structure graphene–InAs/GaAs QDs wherein the graphene plays a key role as a cap layer.

Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

Energy Technology Data Exchange (ETDEWEB)

Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

2014-11-28

The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

Catalytic mechanisms of direct pyrrole synthesis via dehydrogenative coupling mediated by PNP-Ir or PNN-Ru pincer complexes: Crucial role of proton-transfer shuttles in the PNP-Ir system

KAUST Repository

Qu, Shuanglin

2014-04-02

Kempe et al. and Milstein et al. have recently advanced the dehydrogenative coupling methodology to synthesize pyrroles from secondary alcohols (e.g., 3) and β-amino alcohols (e.g., 4), using PNP-Ir (1) and PNN-Ru (2) pincer complexes, respectively. We herein present a DFT study to characterize the catalytic mechanism of these reactions. After precatalyst activation to give active 1A/2A, the transformation proceeds via four stages: 1A/2A-catalyzed alcohol (3) dehydrogenation to give ketone (11), base-facilitated C-N coupling of 11 and 4 to form an imine-alcohol intermediate (18), base-promoted cyclization of 18, and catalyst regeneration via H2 release from 1R/2R. For alcohol dehydrogenations, the bifunctional double hydrogen-transfer pathway is more favorable than that via β-hydride elimination. Generally, proton-transfer (H-transfer) shuttles facilitate various H-transfer processes in both systems. Notwithstanding, H-transfer shuttles play a much more crucial role in the PNP-Ir system than in the PNN-Ru system. Without H-transfer shuttles, the key barriers up to 45.9 kcal/mol in PNP-Ir system are too high to be accessible, while the corresponding barriers (<32.0 kcal/mol) in PNN-Ru system are not unreachable. Another significant difference between the two systems is that the addition of alcohol to 1A giving an alkoxo complex is endergonic by 8.1 kcal/mol, whereas the addition to 2A is exergonic by 8.9 kcal/mol. The thermodynamic difference could be the main reason for PNP-Ir system requiring lower catalyst loading than the PNN-Ru system. We discuss how the differences are resulted in terms of electronic and geometric structures of the catalysts and how to use the features in catalyst development. © 2014 American Chemical Society.

A Klein-tunneling transistor with ballistic graphene

Energy Technology Data Exchange (ETDEWEB)

Wilmart, Quentin; Fève, Gwendal; Berroir, Jean-Marc; Plaçais, Bernard [Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université P et M Curie, Université D Diderot, 24, rue Lhomond, 75231 Paris Cedex 05 (France); Berrada, Salim; Hung Nguyen, V; Dollfus, Philippe [Institute of Fundamental Electronics, Univ. Paris-Sud, CNRS, Orsay (France); Torrin, David [Département de Physique, Ecole Polytechnique, 91128 Palaiseau (France)

2014-06-15

Today, the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistors in the ballistic regime give access to Klein tunneling physics and allow the realization of devices exploiting the optics-like behavior of Dirac Fermions (DFs) as in the Veselago lens or the Fabry–Pérot cavity. Here we propose a Klein tunneling transistor based on the geometrical optics of DFs. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using non-equilibrium Green's function (NEGF) simulation. (letter)

High Detectivity Graphene-Silicon Heterojunction Photodetector.

Science.gov (United States)

Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

2016-02-03

A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Novel Bis(phosphido)pyridine [PNP] 2− Pincer Ligand and Its Potassium and Bis(dimethylamido)zirconium(IV) Complexes

KAUST Repository

Winston, Matthew S.

2010-12-13

A novel PNP bis(secondary phosphine)pyridine pincer ligand, 2,6-bis(2-(phenylphosphino)phenyl)pyridine, has been prepared in high yield, and the properties of the doubly deprotonated form as a ligand in K 4(PNP)2(THF)6 and (PNP)Zr(NMe2) 2 have been investigated. The neutral PNP ligand has been isolated as a mixture of noninterconverting diastereomers, due to the presence of two chirogenic phosphorus atoms of the secondary phopshines, but coordination of the dianionic form to potassium and zirconium allows for isolation of a single diastereomer in near-quantitative yield. The structure of a bis(dimethylamido) zirconium(IV) derivative of the bis(phosphido)pyridine ligand and DFT calculations suggest that the phosphides do not π-bond to early transition metals, likely due to geometric strain and possibly orbital size mismatch between phosphorus and zirconium. As a result, the soft phosphides are prone to formation of insoluble oligomers with substantial bridging of the phosphido lone pairs to other zirconium centers. © 2010 American Chemical Society.

A Novel Bis(phosphido)pyridine [PNP] 2− Pincer Ligand and Its Potassium and Bis(dimethylamido)zirconium(IV) Complexes

KAUST Repository

Winston, Matthew S.; Bercaw, John E.

2010-01-01

A novel PNP bis(secondary phosphine)pyridine pincer ligand, 2,6-bis(2-(phenylphosphino)phenyl)pyridine, has been prepared in high yield, and the properties of the doubly deprotonated form as a ligand in K 4(PNP)2(THF)6 and (PNP)Zr(NMe2) 2 have been investigated. The neutral PNP ligand has been isolated as a mixture of noninterconverting diastereomers, due to the presence of two chirogenic phosphorus atoms of the secondary phopshines, but coordination of the dianionic form to potassium and zirconium allows for isolation of a single diastereomer in near-quantitative yield. The structure of a bis(dimethylamido) zirconium(IV) derivative of the bis(phosphido)pyridine ligand and DFT calculations suggest that the phosphides do not π-bond to early transition metals, likely due to geometric strain and possibly orbital size mismatch between phosphorus and zirconium. As a result, the soft phosphides are prone to formation of insoluble oligomers with substantial bridging of the phosphido lone pairs to other zirconium centers. © 2010 American Chemical Society.

The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors

International Nuclear Information System (INIS)

Wang, Chenhui; Chen, Wei; Liu, Yan; Jin, Xiaoming; Yang, Shanchao; Qi, Chao

2016-01-01

The effects of gamma irradiation on neutron displacement sensitivity of four types of lateral PNP bipolar transistors (LPNPs) with different neutral base widths, emitter widths and the doping concentrations of the epitaxial base region are studied. The physical mechanisms of the effects are explored by defect analysis using deep level transient spectroscopy (DLTS) techniques and numerical simulations of recombination process in the base region of the lateral PNP bipolar transistors, and are verified by the experiments on gate-controlled lateral PNP bipolar transistors (GCLPNPs) manufactured in the identical commercial bipolar process with different gate bias voltage. The results indicate that gamma irradiation increases neutron displacement damage sensitivity of lateral PNP bipolar transistors and the mechanism of this phenomenon is that positive charge induced by gamma irradiation enhances the recombination process in the defects induced by neutrons in the base region, leading to larger recombination component of base current and greater gain degradation.

The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn; Chen, Wei; Liu, Yan; Jin, Xiaoming; Yang, Shanchao; Qi, Chao

2016-09-21

The effects of gamma irradiation on neutron displacement sensitivity of four types of lateral PNP bipolar transistors (LPNPs) with different neutral base widths, emitter widths and the doping concentrations of the epitaxial base region are studied. The physical mechanisms of the effects are explored by defect analysis using deep level transient spectroscopy (DLTS) techniques and numerical simulations of recombination process in the base region of the lateral PNP bipolar transistors, and are verified by the experiments on gate-controlled lateral PNP bipolar transistors (GCLPNPs) manufactured in the identical commercial bipolar process with different gate bias voltage. The results indicate that gamma irradiation increases neutron displacement damage sensitivity of lateral PNP bipolar transistors and the mechanism of this phenomenon is that positive charge induced by gamma irradiation enhances the recombination process in the defects induced by neutrons in the base region, leading to larger recombination component of base current and greater gain degradation.

High-energy MnO2 nanowire/graphene and graphene asymmetric electrochemical capacitors.

Science.gov (United States)

Wu, Zhong-Shuai; Ren, Wencai; Wang, Da-Wei; Li, Feng; Liu, Bilu; Cheng, Hui-Ming

2010-10-26

In order to achieve high energy and power densities, we developed a high-voltage asymmetric electrochemical capacitor (EC) based on graphene as negative electrode and a MnO(2) nanowire/graphene composite (MGC) as positive electrode in a neutral aqueous Na(2)SO(4) solution as electrolyte. MGC was prepared by solution-phase assembly of graphene sheets and α-MnO(2) nanowires. Such aqueous electrolyte-based asymmetric ECs can be cycled reversibly in the high-voltage region of 0-2.0 V and exhibit a superior energy density of 30.4 Wh kg(-1), which is much higher than those of symmetric ECs based on graphene//graphene (2.8 Wh kg(-1)) and MGC//MGC (5.2 Wh kg(-1)). Moreover, they present a high power density (5000 W kg(-1) at 7.0 Wh kg(-1)) and acceptable cycling performance of ∼79% retention after 1000 cycles. These findings open up the possibility of graphene-based composites for applications in safe aqueous electrolyte-based high-voltage asymmetric ECs with high energy and power densities.

Generalized syntheses of nanocrystal-graphene hybrids in high-boiling-point organic solvents.

Science.gov (United States)

Pang, Danny Wei-Ping; Yuan, Fang-Wei; Chang, Yan-Cheng; Li, Guo-An; Tuan, Hsing-Yu

2012-08-07

Nanocrystal-graphene have been proposed as a new kind of promising hybrid for a wide range of application areas including catalysts, electronics, sensors, biomedicine, and energy storage, etc. Although a variety of methods have been developed for the preparation of hybrids, a facile and general synthetic approach is still highly required. In this study, nanocrystal-graphene hybrids were successfully synthesized in high-boiling-point organic solvents. Graphene oxide (GO) nanosheets were modified by oleylamine (OLA) to form a OLA-GO complex in order to be readily incorporated into hydrophobic synthesis. A rich library of highly crystalline nanocrystals, with types including noble metal, metal oxide, magnetic material and semiconductor were successfully grown on chemically converted graphene (CCG), which is simultaneously reduced from GO during the synthesis. High boiling-point solvents afford sufficient thermal energy to assure the high-quality crystalline nature of NCs, therefore the post-annealing process is obviated. Controlled experiments revealed that OLA-GO triggers heterogeneous nucleation and serves as excellent nuclei anchorage media. The protocol developed here brings one step closer to achieve "unity in diversity" on the preparation of nanocrystal-graphene hybrids.

Highly Conductive Multifunctional Graphene Polycarbonate Nanocomposites

Science.gov (United States)

Yoonessi, Mitra; Gaier, James R.

2010-01-01

Graphene nanosheet bisphenol A polycarbonate nanocomposites (0.027 2.2 vol %) prepared by both emulsion mixing and solution blending methods, followed by compression molding at 287 C, exhibited dc electrical percolation threshold of approx.0.14 and approx.0.38 vol %, respectively. The conductivities of 2.2 vol % graphene nanocomposites were 0.512 and 0.226 S/cm for emulsion and solution mixing. The 1.1 and 2.2 vol % graphene nanocomposites exhibited frequency-independent behavior. Inherent conductivity, extremely high aspect ratio, and nanostructure directed assembly of the graphene using PC nanospheres are the main factors for excellent electrical properties of the nanocomposites. Dynamic tensile moduli of nanocomposites increased with increasing graphene in the nanocomposite. The glass transition temperatures were decreased with increasing graphene for the emulsion series. High-resolution electron microscopy (HR-TEM) and small-angle neutron scattering (SANS) showed isolated graphene with no connectivity path for insulating nanocomposites and connected nanoparticles for the conductive nanocomposites. A stacked disk model was used to obtain the average particle radius, average number of graphene layers per stack, and stack spacing by simulation of the experimental SANS data. Morphology studies indicated the presence of well-dispersed graphene and small graphene stacking with infusion of polycarbonate within the stacks.

Effect of friction on oxidative graphite intercalation and high-quality graphene formation.

Science.gov (United States)

Seiler, Steffen; Halbig, Christian E; Grote, Fabian; Rietsch, Philipp; Börrnert, Felix; Kaiser, Ute; Meyer, Bernd; Eigler, Siegfried

2018-02-26

Oxidative wet-chemical delamination of graphene from graphite is expected to become a scalable production method. However, the formation process of the intermediate stage-1 graphite sulfate by sulfuric acid intercalation and its subsequent oxidation are poorly understood and lattice defect formation must be avoided. Here, we demonstrate film formation of micrometer-sized graphene flakes with lattice defects down to 0.02% and visualize the carbon lattice by transmission electron microscopy at atomic resolution. Interestingly, we find that only well-ordered, highly crystalline graphite delaminates into oxo-functionalized graphene, whereas other graphite grades do not form a proper stage-1 intercalate and revert back to graphite upon hydrolysis. Ab initio molecular dynamics simulations show that ideal stacking and electronic oxidation of the graphite layers significantly reduce the friction of the moving sulfuric acid molecules, thereby facilitating intercalation. Furthermore, the evaluation of the stability of oxo-species in graphite sulfate supports an oxidation mechanism that obviates intercalation of the oxidant.

A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

Science.gov (United States)

Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

2018-04-01

We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

Science.gov (United States)

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-02-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

Science.gov (United States)

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-02-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

High-quality PVD graphene growth by fullerene decomposition on Cu foils

Czech Academy of Sciences Publication Activity Database

Azpeitia, J.; Otero-Irurueta, G.; Palacio, I.; Martinez, J. I.; Ruiz del Arbol, N.; Santoro, G.; Gutiérrez, A.; Aballe, L.; Foerster, M.; Kalbáč, Martin; Valeš, Václav; Mompean, F. J.; Garcia-Hernandez, M.; Martín-Gago, J.A.; Munuera, C.; Lopez, M. F.

2017-01-01

Roč. 119, AUG 2017 (2017), s. 535-543 ISSN 0008-6223 R&D Projects: GA MŠk LL1301 EU Projects: European Commission(XE) 696656 - GrapheneCore1 Institutional support: RVO:61388955 Keywords : functional perturbation- theory * epitaxial graphene * copper substrate * pt(111) surface * raman-spectrum * cvd-graphene Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 6.337, year: 2016

High-quality PVD graphene growth by fullerene decomposition on Cu foils

Czech Academy of Sciences Publication Activity Database

Azpeitia, J.; Otero-Irurueta, G.; Palacio, I.; Martinez, J. I.; Ruiz del Arbol, N.; Santoro, G.; Gutiérrez, A.; Aballe, L.; Foerster, M.; Kalbáč, Martin; Valeš, Václav; Mompean, F. J.; Garcia-Hernandez, M.; Martín-Gago, J.A.; Munuera, C.; Lopez, M. F.

2017-01-01

Roč. 119, AUG 2017 (2017), s. 535-543 ISSN 0008-6223 R&D Projects: GA MŠk LL1301 EU Projects: European Commission(XE) 696656 - GrapheneCore1 Institutional support: RVO:61388955 Keywords : functional perturbation-theory * epitaxial graphene * copper substrate * pt(111) surface * raman-spectrum * cvd-graphene Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 6.337, year: 2016

Turbostratic stacked CVD graphene for high-performance devices

Science.gov (United States)

Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

2018-03-01

We have fabricated turbostratic stacked graphene with high-transport properties by the repeated transfer of CVD monolayer graphene. The turbostratic stacked CVD graphene exhibited higher carrier mobility and conductivity than CVD monolayer graphene. The electron mobility for the three-layer turbostratic stacked CVD graphene surpassed 10,000 cm2 V-1 s-1 at room temperature, which is five times greater than that for CVD monolayer graphene. The results indicate that the high performance is derived from maintenance of the linear band dispersion, suppression of the carrier scattering, and parallel conduction. Therefore, turbostratic stacked CVD graphene is a superior material for high-performance devices.

A Klein-tunneling transistor with ballistic graphene

International Nuclear Information System (INIS)

Wilmart, Quentin; Fève, Gwendal; Berroir, Jean-Marc; Plaçais, Bernard; Berrada, Salim; Hung Nguyen, V; Dollfus, Philippe; Torrin, David

2014-01-01

Today, the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistors in the ballistic regime give access to Klein tunneling physics and allow the realization of devices exploiting the optics-like behavior of Dirac Fermions (DFs) as in the Veselago lens or the Fabry–Pérot cavity. Here we propose a Klein tunneling transistor based on the geometrical optics of DFs. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using non-equilibrium Green's function (NEGF) simulation. (letter)

Physics in graphene & quantum rings : from mesoscopic device fabrication to measurement in high magnetic fields

NARCIS (Netherlands)

Giesbers, A.J.M.

2010-01-01

New materials often lead to spectacular discoveries. A prominenent example is graphene, a single layer of carbon atoms arranged in a honeycomb lattice. This one atom thick carbon sheet has a high crystal quality and remarkable electronic properties. The charge carriers in graphene behave as

Growing three-dimensional biomorphic graphene powders using naturally abundant diatomite templates towards high solution processability

Science.gov (United States)

Chen, Ke; Li, Cong; Shi, Liurong; Gao, Teng; Song, Xiuju; Bachmatiuk, Alicja; Zou, Zhiyu; Deng, Bing; Ji, Qingqing; Ma, Donglin; Peng, Hailin; Du, Zuliang; Rümmeli, Mark Hermann; Zhang, Yanfeng; Liu, Zhongfan

2016-11-01

Mass production of high-quality graphene with low cost is the footstone for its widespread practical applications. We present herein a self-limited growth approach for producing graphene powders by a small-methane-flow chemical vapour deposition process on naturally abundant and industrially widely used diatomite (biosilica) substrates. Distinct from the chemically exfoliated graphene, thus-produced biomorphic graphene is highly crystallized with atomic layer-thickness controllability, structural designability and less noncarbon impurities. In particular, the individual graphene microarchitectures preserve a three-dimensional naturally curved surface morphology of original diatom frustules, effectively overcoming the interlayer stacking and hence giving excellent dispersion performance in fabricating solution-processible electrodes. The graphene films derived from as-made graphene powders, compatible with either rod-coating, or inkjet and roll-to-roll printing techniques, exhibit much higher electrical conductivity (~110,700 S m-1 at 80% transmittance) than previously reported solution-based counterparts. This work thus puts forward a practical route for low-cost mass production of various powdery two-dimensional materials.

Graphene growth with ‘no’ feedstock

Science.gov (United States)

Qing, Fangzhu; Jia, Ruitao; Li, Bao-Wen; Liu, Chunlin; Li, Congzhou; Peng, Bo; Deng, Longjiang; Zhang, Wanli; Li, Yanrong; Ruoff, Rodney S.; Li, Xuesong

2017-06-01

Synthesis of graphene by chemical vapor deposition (CVD) from hydrocarbons on Cu foil substrates can yield high quality and large area graphene films. In a typical CVD process, a hydrocarbon in the gas phase is introduced for graphene growth and hydrogen is usually required to achieve high quality graphene. We have found that in a low pressure CVD system equipped with an oil mechanical vacuum pump located downstream, graphene can be grown without deliberate introduction of a carbon feedstock but with only trace amounts of C present in the system, the origin of which we attribute to the vapor of the pump oil. This finding may help to rationalize the differences in graphene growth reported by different research groups. It should also help to gain an in-depth understanding of graphene growth mechanisms with the aim to improve the reproducibility and structure control in graphene synthesis, e.g. the formation of large area single crystal graphene and uniform bilayer graphene.

Pressure-dependent synthesis of high-quality few-layer graphene by plasma-enhanced arc discharge and their thermal stability

International Nuclear Information System (INIS)

Kumar, Rajesh; Singh, Rajesh Kumar; Dubey, Pawan Kumar; Kumar, Pradip; Tiwari, Radhey Shyam; Oh, Il-Kwon

2013-01-01

In this article, a simple and cost-effective method to produce high-quality few-layer graphene (FLG) sheets (∼4 layers) have been achieved by the direct current arc discharge under argon atmosphere, using pure graphite rods as the electrodes. Ar was used as a buffer gas with pure graphite rods as anode and cathode electrodes. We explored the suitable conditions for producing FLG by changing the Ar gas pressure inside the arcing chamber. This method has several advantages over the previous methods to produce graphene for research applications. No toxic and hazardous intercalant was used for producing FLG in this process. The optimum Ar pressure was 500 Torr, for producing minimum number of FLG and this also shows the good thermal stability. The FLG product so obtained has been characterized by X-ray diffraction, scanning and electron microscopy, Raman and Fourier transform infrared spectroscopy. Thermal stabilities of FLG were determined by thermal gravimetric analysis

Quality assessment of graphene: Continuity, uniformity, and accuracy of mobility measurements

DEFF Research Database (Denmark)

Mackenzie, David; Buron, Jonas Christian Due; Whelan, Patrick Rebsdorf

2017-01-01

. We present a simple framework for assessing the quality and homogeneity of large-area graphene devices. The field effect in both exfoliated graphene devices encapsulated in hexagonal boron nitride and chemical vapor-deposited (CVD) devices was measured in dual current–voltage configurations and used...

De-embedding and Modelling of pnp SiGe HBTs

DEFF Research Database (Denmark)

Hadziabdic, Dzenan; Jiang, Chenhui; Johansen, Tom Keinicke

2007-01-01

In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to accoun...

Copper-vapor-catalyzed chemical vapor deposition of graphene on dielectric substrates

Science.gov (United States)

Yang, Chao; Wu, Tianru; Wang, Haomin; Zhang, Xuefu; Shi, Zhiyuan; Xie, Xiaoming

2017-07-01

Direct synthesis of high-quality graphene on dielectric substrates is important for its application in electronics. In this work, we report the process of copper-vapor-catalyzed chemical vapor deposition of high-quality and large graphene domains on various dielectric substrates. The copper vapor plays a vital role on the growth of transfer-free graphene. Both single-crystal domains that are much larger than previous reports and high-coverage graphene films can be obtained by adjusting the growth duration. The quality of the obtained graphene was verified to be comparable with that of graphene grown on Cu foil. The progress reported in this work will aid the development of the application of transfer-free graphene in the future.

Growing three-dimensional biomorphic graphene powders using naturally abundant diatomite templates towards high solution processability.

Science.gov (United States)

Chen, Ke; Li, Cong; Shi, Liurong; Gao, Teng; Song, Xiuju; Bachmatiuk, Alicja; Zou, Zhiyu; Deng, Bing; Ji, Qingqing; Ma, Donglin; Peng, Hailin; Du, Zuliang; Rümmeli, Mark Hermann; Zhang, Yanfeng; Liu, Zhongfan

2016-11-07

Mass production of high-quality graphene with low cost is the footstone for its widespread practical applications. We present herein a self-limited growth approach for producing graphene powders by a small-methane-flow chemical vapour deposition process on naturally abundant and industrially widely used diatomite (biosilica) substrates. Distinct from the chemically exfoliated graphene, thus-produced biomorphic graphene is highly crystallized with atomic layer-thickness controllability, structural designability and less noncarbon impurities. In particular, the individual graphene microarchitectures preserve a three-dimensional naturally curved surface morphology of original diatom frustules, effectively overcoming the interlayer stacking and hence giving excellent dispersion performance in fabricating solution-processible electrodes. The graphene films derived from as-made graphene powders, compatible with either rod-coating, or inkjet and roll-to-roll printing techniques, exhibit much higher electrical conductivity (∼110,700 S m -1 at 80% transmittance) than previously reported solution-based counterparts. This work thus puts forward a practical route for low-cost mass production of various powdery two-dimensional materials.

Synthesis of graphene by MEVVA source ion implantation

International Nuclear Information System (INIS)

Ying, J.J.; Xiao, X.H.; Dai, Z.G.; Wu, W.; Li, W.Q.; Mei, F.; Cai, G.X.; Ren, F.; Jiang, C.Z.

2013-01-01

Ion implantation provides a new synthesis route for graphene, and few-layered graphene synthesis by ion implantation has been reported. Here we show the synthesis of a single layer of high-quality graphene by Metal Vapor Vacuum Arc (MEVVA) source ion implantation. Polycrystalline nickel and copper thin films are implanted with MEVVA source carbon ions at 40 kV, followed by high-temperature thermal annealing and quenching. A Raman spectrum is applied to probe the quality and thickness of the prepared graphene. A single layer of high-quality graphene is grown on the nickel films, but not on the copper films. The growth mechanisms on the nickel and copper films are explained. MEVVA source ion implantation has been widely applied in industrial applications, demonstrating that this synthesis method can be generalized for industrial production

Porous Graphene Microflowers for High-Performance Microwave Absorption

Science.gov (United States)

Chen, Chen; Xi, Jiabin; Zhou, Erzhen; Peng, Li; Chen, Zichen; Gao, Chao

2018-06-01

Graphene has shown great potential in microwave absorption (MA) owing to its high surface area, low density, tunable electrical conductivity and good chemical stability. To fully realize graphene's MA ability, the microstructure of graphene should be carefully addressed. Here we prepared graphene microflowers (Gmfs) with highly porous structure for high-performance MA filler material. The efficient absorption bandwidth (reflection loss ≤ -10 dB) reaches 5.59 GHz and the minimum reflection loss is up to -42.9 dB, showing significant increment compared with stacked graphene. Such performance is higher than most graphene-based materials in the literature. Besides, the low filling content (10 wt%) and low density (40-50 mg cm-3) are beneficial for the practical applications. Without compounding with magnetic materials or conductive polymers, Gmfs show outstanding MA performance with the aid of rational microstructure design. Furthermore, Gmfs exhibit advantages in facile processibility and large-scale production compared with other porous graphene materials including aerogels and foams.

Surface plasmon resonance induced reduction of high quality Ag/graphene composite at water/toluene phase for reduction of H2O2

International Nuclear Information System (INIS)

Zhang Fengjun; Zhang Kehua; Xie Fazhi; Liu Jin; Dong Hongfei; Zhao Wei; Meng Zeda

2013-01-01

Highlights: ► The Ag/graphene composites have been successfully synthesized in two-phase solvent. ► The surface plasmon resonance of Ag can reduce GO with high deoxygenation and low defect. ► The Ag particles were uniformly distributed on graphene surface. ► The Ag/graphene composites obtained show high superior electrical properties for reduction of H 2 O 2 . - Abstract: Surface plasmon resonance induced synthesis of Ag/graphene composites from Ag/graphene oxide (Ag/GO) in a two-phase (water–toluene) solvent was reported. Transmission electron microscopy (TEM) results revealed that the Ag nanoparticles with size of 5–8 nm were trimly distributed on reduced graphene oxide sheets. Raman and X-ray photoelectron spectroscopy (XPS) have demonstrated low defect density and high deoxygenation degree of graphene in Ag/graphene composite. The excellent structure and morphology of Ag/graphene composites contributed to superior electrical properties for reduction of H 2 O 2 .

High quality sub-10 nm graphene nanoribbons by on-chip PS-b-PDMS block copolymer lithography

DEFF Research Database (Denmark)

Rasappa, Sozaraj; Caridad, Jose; Schulte, Lars

2015-01-01

block and the graphene under PS. Raman analysis supports the formation of graphene nanoribbons with an average distance between defects corresponding to the oxidized PDMS pitch, with no sign of defects generated in the ribbon channel. This suggests a high degree of protection of the nanoribbons...... by the hard oxidized PDMS mask formed in situ during oxygen plasma etching....

Promising applications of graphene and graphene-based nanostructures

Science.gov (United States)

Nguyen, Bich Ha; Hieu Nguyen, Van

2016-06-01

The present article is a review of research works on promising applications of graphene and graphene-based nanostructures. It contains five main scientific subjects. The first one is the research on graphene-based transparent and flexible conductive films for displays and electrodes: efficient method ensuring uniform and controllable deposition of reduced graphene oxide thin films over large areas, large-scale pattern growth of graphene films for stretchble transparent electrodes, utilization of graphene-based transparent conducting films and graphene oxide-based ones in many photonic and optoelectronic devices and equipments such as the window electrodes of inorganic, organic and dye-sensitized solar cells, organic light-emitting diodes, light-emitting electrochemical cells, touch screens, flexible smart windows, graphene-based saturated absorbers in laser cavities for ultrafast generations, graphene-based flexible, transparent heaters in automobile defogging/deicing systems, heatable smart windows, graphene electrodes for high-performance organic field-effect transistors, flexible and transparent acoustic actuators and nanogenerators etc. The second scientific subject is the research on conductive inks for printed electronics to revolutionize the electronic industry by producing cost-effective electronic circuits and sensors in very large quantities: preparing high mobility printable semiconductors, low sintering temperature conducting inks, graphene-based ink by liquid phase exfoliation of graphite in organic solutions, and developing inkjet printing technique for mass production of high-quality graphene patterns with high resolution and for fabricating a variety of good-performance electronic devices, including transparent conductors, embedded resistors, thin-film transistors and micro supercapacitors. The third scientific subject is the research on graphene-based separation membranes: molecular dynamics simulation study on the mechanisms of the transport of

A roadmap to high quality chemically prepared graphene

NARCIS (Netherlands)

Gengler, Regis Y. N.; Spyrou, Konstantinos; Rudolf, Petra

2010-01-01

Graphene was discovered half a decade ago and proved the existence of a two-dimensional system which becomes stable as a result of 3D corrugation. It appeared very quickly that this exceptional material had truly outstanding electronic, mechanical, thermal and optical properties. Consequently a

What a difference a 5f element makes: trivalent and tetravalent uranium halide complexes supported by one and two bis[2-(diisopropylphosphino)-4-methylphenyl]amido (PNP) ligands.

Science.gov (United States)

Cantat, Thibault; Scott, Brian L; Morris, David E; Kiplinger, Jaqueline L

2009-03-02

The coordination behavior of the bis[2-(diisopropylphosphino)-4-methylphenyl]amido ligand (PNP) toward UI3(THF)4 and UCl4 has been investigated to access new uranium(III) and uranium(IV) halide complexes supported by one and two PNP ligands. The reaction between (PNP)K (6) and 1 equiv of UI3(THF)4 afforded the trivalent halide complex (PNP)UI2(4-tBu-pyridine)2 (7) in the presence of 4-tert-butylpyridine. The same reaction carried out with UCl4 and no donor ligand gave [(PNP)UCl3]2 (8), in which the uranium coordination sphere in the (PNP)UCl3 unit is completed by a bridging chloride ligand. When UCl4 is reacted with 1 equiv (PNP)K (6) in the presence of THF, trimethylphosphine oxide (TMPO), or triphenylphosphineoxide (TPPO), the tetravalent halide complexes (PNP)UCl3(THF) (9), (PNP)UCl3(TMPO)2 (10), and (PNP)UCl3(TPPO) (11), respectively, are formed in excellent yields. The bis(PNP) complexes of uranium(III), (PNP)2UI (12), and uranium(IV), (PNP)2UCl2 (13), were easily isolated from the analogous reactions between 2 equiv of 6 and UI3(THF)4 or UCl4, respectively. Complexes 12 and 13 represent the first examples of complexes featuring two PNP ligands coordinated to a single metal center. Complexes 7-13 have been characterized by single-crystal X-ray diffraction and 1H and 31P NMR spectroscopy. The X-ray structures demonstrate the ability of the PNP ligand to adopt new coordination modes upon coordination to uranium. The PNP ligand can adopt both pseudo-meridional and pseudo-facial geometries when it is kappa3-(P,N,P) coordinated, depending on the steric demand at the uranium metal center. Additionally, its hemilabile character was demonstrated with an unusual kappa2-(P,N) coordination mode that is maintained in both the solid-state and in solution. Comparison of the structures of the mono(PNP) and bis(PNP) complexes 7, 9, 11-13 with their respective C5Me5 analogues 1-4 undoubtedly show that a more sterically congested environment is provided by the PNP ligand. The

Enabling graphene nanoelectronics.

Energy Technology Data Exchange (ETDEWEB)

Pan, Wei; Ohta, Taisuke; Biedermann, Laura Butler; Gutierrez, Carlos; Nolen, C. M.; Howell, Stephen Wayne; Beechem Iii, Thomas Edwin; McCarty, Kevin F.; Ross, Anthony Joseph, III

2011-09-01

Recent work has shown that graphene, a 2D electronic material amenable to the planar semiconductor fabrication processing, possesses tunable electronic material properties potentially far superior to metals and other standard semiconductors. Despite its phenomenal electronic properties, focused research is still required to develop techniques for depositing and synthesizing graphene over large areas, thereby enabling the reproducible mass-fabrication of graphene-based devices. To address these issues, we combined an array of growth approaches and characterization resources to investigate several innovative and synergistic approaches for the synthesis of high quality graphene films on technologically relevant substrate (SiC and metals). Our work focused on developing the fundamental scientific understanding necessary to generate large-area graphene films that exhibit highly uniform electronic properties and record carrier mobility, as well as developing techniques to transfer graphene onto other substrates.

Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

Science.gov (United States)

Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

2015-07-28

High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

Catalyst-Free Growth of Three-Dimensional Graphene Flakes and Graphene/g-C₃N₄ Composite for Hydrocarbon Oxidation.

Science.gov (United States)

Chen, Ke; Chai, Zhigang; Li, Cong; Shi, Liurong; Liu, Mengxi; Xie, Qin; Zhang, Yanfeng; Xu, Dongsheng; Manivannan, Ayyakkannu; Liu, Zhongfan

2016-03-22

Mass production of high-quality graphene flakes is important for commercial applications. Graphene microsheets have been produced on an industrial scale by chemical and liquid-phase exfoliation of graphite. However, strong-interaction-induced interlayer aggregation usually leads to the degradation of their intrinsic properties. Moreover, the crystallinity or layer-thickness controllability is not so perfect to fulfill the requirement for advanced technologies. Herein, we report a quartz-powder-derived chemical vapor deposition growth of three-dimensional (3D) high-quality graphene flakes and demonstrate the fabrication and application of graphene/g-C3N4 composites. The graphene flakes obtained after the removal of growth substrates exhibit the 3D curved microstructure, controllable layer thickness, good crystallinity, as well as weak interlayer interactions suitable for preventing the interlayer stacking. Benefiting from this, we achieved the direct synthesis of g-C3N4 on purified graphene flakes to form the uniform graphene/g-C3N4 composite, which provides efficient electron transfer interfaces to boost its catalytic oxidation activity of cycloalkane with relatively high yield, good selectivity, and reliable stability.

Relationships between acute toxicities of para nitrophenol (p-NP) and nitrobenzene (NB) to Daphnia magna and Photobacterium phosphoreum: Physicochemical properties and metabolites under anaerobic/aerobic sequentials

International Nuclear Information System (INIS)

Sponza, Delia Teresa; Kuscu, Ozlem Selcuk

2011-01-01

In this study, the acute toxicities of nitrobenzene (NB) and para nitrophenol (p-NP) were investigated in a high rate sequential anaerobic migrating blanket (AMBR)/aerobic completely stirred tank reactor (CSTR) using Microtox and Daphnia magna tests. After sequential anaerobic and aerobic treatments, the inhibitions in the Microtox bacteria decreased from an initial 78.10-48.20% and 4.00%, respectively, in wastewater containing 40.00 mg/L p-NP. The inhibitions of the influent wastewater containing 60.00 mg/L NB decreased from 72.10% to 45.30% and to 4.00% after anaerobic and aerobic treatment, respectively. The acute toxicity removals were 94% and 93% in the effluent of the whole sequential system, for p-NP and NB, respectively. The acute toxicity in the influent was dependent on the parent NB and p-NP concentrations and ons their physicochemical properties such as hydrophobicity, octanol/water partition coefficient and vapour density for both Microtox bacteria and Daphnia magna while the toxicity in the effluent of the anaerobic reactor was strongly dependent on the metabolites of p-NP (p-amino phenol, phenol, NH 4 -N) and NB (aniline) for Microtox test. This effluent was not toxic to Daphnia magna.

P-nitrophenol degradation using N-doped reduced graphene-CdS nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Gharedaghi, Sepideh [Department of Physics, Islamic Azad University, Tehran (Iran, Islamic Republic of); Kimiagar, Salimeh [Nano Research Lab (NRL), Department of Physics, Islamic Azad University, Tehran (Iran, Islamic Republic of); Safa, Saeed [Young Researchers and Elite Club, Islamic Azad University, Tehran (Iran, Islamic Republic of)

2018-02-15

A series of nitrogen doped reduce graphene-CdS (NRGC) nanocomposites were successfully synthesized by using hydrothermal method. The structure and morphology of the samples were characterized by using FTIR, XRD, SEM, and PL. Photocatalytic activity of the nanocomposites for removing P-nitrophenol (PNP) pollutant was studied under both ultra-violet (UV) and visible light irradiation. The results show that NRGC nanocomposites exhibited higher photocatalytic activity than pure CdS. The degradation rate significantly increased to 50 and 70% by the addition of nitrogen doped reduced graphene oxide (NRGO) to CdS under UV and visible irradiation, respectively. Higher photocatalytic activity of the nanocomposites was due to the role of NRGO as an excellent electron acceptor and transporter. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Melanoma targeting with [99mTc(N)(PNP3)]-labeled α-melanocyte stimulating hormone peptide analogs: Effects of cyclization on the radiopharmaceutical properties

International Nuclear Information System (INIS)

Carta, Davide; Salvarese, Nicola; Morellato, Nicolò; Gao, Feng; Sihver, Wiebke; Pietzsch, Hans Jurgen; Biondi, Barbara; Ruzza, Paolo; Refosco, Fiorenzo; Carpanese, Debora; Rosato, Antonio; Bolzati, Cristina

2016-01-01

The purpose of this study was to evaluate the effect of cyclization on the biological profile of a [ 99m Tc(N)(PNP3)]-labeled α-melanocyte stimulating hormone peptide analog. A lactam bridge-cyclized H-Cys-Ahx-βAla 3 -c[Lys 4 -Glu-His-D-Phe-Arg-Trp-Glu 10 ]-Arg 11 -Pro-Val-NH 2 (NAP―NS2) and the corresponding linear H-Cys-Ahx-βAla-Nle-Asp-His-D-Phe-Arg-Trp-Gly-NH 2 (NAP―NS1) peptide were synthetized, characterized by ESI-MS spectroscopy and their melanocortin-1 receptor (MC1R) binding affinity was determined in B16/F10 melanoma cells. The consistent [ 99m Tc(N)(PNP3)]-labeled compounds were readily obtained in high specific activity and their stability and biological properties were assessed. As an example, the chemical identity of [ 99m Tc(N)(NAP–NS1)(PNP3)] + was confirmed by carrier added experiments supported by radio/UV HPLC analysis combined with ESI(+)-MS. Compared with the linear peptide, cyclization negatively affected the biological properties of NAP–NS2 peptide by reducing its binding affinity for MC1R and by decreasing the overall excretion rate of the corresponding [ 99m Tc(N)(PNP3)]-labeled peptide from the body as well as its in vivo stability. [ 99m Tc(N)(NAP–NS1)(PNP3)] + was evaluated for its potential as melanoma imaging probe in murine melanoma model. Data from in vitro and in vivo studies on B16/F10 melanoma model of [ 99m Tc(N)(NAP–NS1)(PNP3)] + clearly evidenced that the radiolabeled linear peptide keeps its biological properties up on the conjugation to the [ 99m Tc(N)(PNP3)]-building block. The progressive increase of the tumor-to-nontarget ratios over the time indicates a quite stable interaction between the radio-complex and the MC1R.

The effect of magnetic field on chiral transmission in p-n-p graphene junctions

Science.gov (United States)

Li, Yuan; Wan, Qi; Peng, Yingzi; Wang, Guanqing; Qian, Zhenghong; Zhou, Guanghui; Jalil, Mansoor B. A.

2015-12-01

We investigate Klein tunneling in graphene heterojunctions under the influence of a perpendicular magnetic field via the non-equilibrium Green’s function method. We find that the angular dependence of electron transmission is deflected sideways, resulting in the suppression of normally incident electrons and overall decrease in conductance. The off-normal symmetry axis of the transmission profile was analytically derived. Overall tunneling conductance decreases to almost zero regardless of the potential barrier height when the magnetic field (B-field) exceeds a critical value, thus achieving effective confinement of Dirac fermions. The critical field occurs when the width of the magnetic field region matches the diameter of the cyclotron orbit. The potential barrier also induces distinct Fabry-Pérot fringe patterns, with a “constriction region” of low transmission when is close to the Fermi energy. Application of B-field deflects the Fabry-Pérot interference pattern to an off-normal angle. Thus, the conductance of the graphene heterojunctions can be sharply modulated by adjusting the B-field strength and the potential barrier height relative to the Fermi energy.

The effect of magnetic field on chiral transmission in p-n-p graphene junctions.

Science.gov (United States)

Li, Yuan; Wan, Qi; Peng, Yingzi; Wang, Guanqing; Qian, Zhenghong; Zhou, Guanghui; Jalil, Mansoor B A

2015-12-18

We investigate Klein tunneling in graphene heterojunctions under the influence of a perpendicular magnetic field via the non-equilibrium Green's function method. We find that the angular dependence of electron transmission is deflected sideways, resulting in the suppression of normally incident electrons and overall decrease in conductance. The off-normal symmetry axis of the transmission profile was analytically derived. Overall tunneling conductance decreases to almost zero regardless of the potential barrier height V0 when the magnetic field (B-field) exceeds a critical value, thus achieving effective confinement of Dirac fermions. The critical field occurs when the width of the magnetic field region matches the diameter of the cyclotron orbit. The potential barrier also induces distinct Fabry-Pérot fringe patterns, with a "constriction region" of low transmission when V0 is close to the Fermi energy. Application of B-field deflects the Fabry-Pérot interference pattern to an off-normal angle. Thus, the conductance of the graphene heterojunctions can be sharply modulated by adjusting the B-field strength and the potential barrier height relative to the Fermi energy.

Mechanisms of ionizing-radiation-induced gain degradation in lateral PNP BJTs

International Nuclear Information System (INIS)

Schmidt, D.M.; Wu, A.; Schrimpf, R.D.; Pease, R.L.; Combs, W.E.

1996-01-01

The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experimentally and through simulation. The effect of increased surface recombination velocity at the base surface is moderated by positive oxide charge

Selective exfoliation of single-layer graphene from non-uniform graphene grown on Cu

International Nuclear Information System (INIS)

Lim, Jae-Young; Lee, Jae-Hyun; Jang, Hyeon-Sik; Whang, Dongmok; Joo, Won-Jae; Hwang, SungWoo

2015-01-01

Graphene growth on a copper surface via metal-catalyzed chemical vapor deposition has several advantages in terms of providing high-quality graphene with the potential for scale-up, but the product is usually inhomogeneous due to the inability to control the graphene layer growth. The non-uniform regions strongly affect the reliability of the graphene in practical electronic applications. Herein, we report a novel graphene transfer method that allows for the selective exfoliation of single-layer graphene from non-uniform graphene grown on a Cu foil. Differences in the interlayer bonding energy are exploited to mechanically separate only the top single-layer graphene and transfer this to an arbitrary substrate. The dry-transferred single-layer graphene showed electrical characteristics that were more uniform than those of graphene transferred using conventional wet-etching transfer steps. (paper)

Deterministic patterned growth of high-mobility large-crystal graphene: a path towards wafer scale integration

Science.gov (United States)

Miseikis, Vaidotas; Bianco, Federica; David, Jérémy; Gemmi, Mauro; Pellegrini, Vittorio; Romagnoli, Marco; Coletti, Camilla

2017-06-01

We demonstrate rapid deterministic (seeded) growth of large single-crystals of graphene by chemical vapour deposition (CVD) utilising pre-patterned copper substrates with chromium nucleation sites. Arrays of graphene single-crystals as large as several hundred microns are grown with a periodicity of up to 1 mm. The graphene is transferred to target substrates using aligned and contamination- free semi-dry transfer. The high quality of the synthesised graphene is confirmed by Raman spectroscopy and transport measurements, demonstrating room-temperature carrier mobility of 21 000 cm2 V-1 s-1 when transferred on top of hexagonal boron nitride. By tailoring the nucleation of large single-crystals according to the desired device geometry, it will be possible to produce complex device architectures based on single-crystal graphene, thus paving the way to the adoption of CVD graphene in wafer-scale fabrication.

Highly n -doped graphene generated through intercalated terbium atoms

Science.gov (United States)

Daukiya, L.; Nair, M. N.; Hajjar-Garreau, S.; Vonau, F.; Aubel, D.; Bubendorff, J. L.; Cranney, M.; Denys, E.; Florentin, A.; Reiter, G.; Simon, L.

2018-01-01

We obtained highly n -type doped graphene by intercalating terbium atoms between graphene and SiC(0001) through appropriate annealing in ultrahigh vacuum. After terbium intercalation angle-resolved-photoelectron spectroscopy (ARPES) showed a drastic change in the band structure around the K points of the Brillouin zone: the well-known conical dispersion band of a graphene monolayer was superposed by a second conical dispersion band of a graphene monolayer with an electron density reaching 1015cm-2 . In addition, we demonstrate that atom intercalation proceeds either below the buffer layer or between the buffer layer and the monolayer graphene. The intercalation of terbium below a pure buffer layer led to the formation of a highly n -doped graphene monolayer decoupled from the SiC substrate, as evidenced by ARPES and x-ray photoelectron spectroscopy measurements. The band structure of this highly n -doped monolayer graphene showed a kink (a deviation from the linear dispersion of the Dirac cone), which has been associated with an electron-phonon coupling constant one order of magnitude larger than those usually obtained for graphene with intercalated alkali metals.

Charge dynamics in graphene and graphene superlattices under a high-frequency electric field: a semiclassical approach

International Nuclear Information System (INIS)

Kryuchkov, S V; Kukhar’, E I; Zav’yalov, D V

2013-01-01

The semiclassical theory of the dynamics of the charge carriers in graphene and in graphene superlattices exposed to a high-frequency electric field is developed. The dispersion law of the solid averaged over the period of the high-frequency electric field is found with the Kapitza method. The band gap in graphene is shown to arise under a high-frequency electric field polarized circularly. The effective mass of charge carriers in the center of the Brillouin band of the graphene superlattice is found to change sign under certain values of the amplitude of the high-frequency field. These values are shown to determine the bounds of the regions of the electromagnetic 2π-pulse stability. The dynamics of the π-pulse in a graphene superlattice is studied. (paper)

Influence of Mg doping on ZnO nanoparticles decorated on graphene oxide (GO) crumpled paper like sheet and its high photo catalytic performance under sunlight

Science.gov (United States)

Labhane, P. K.; Sonawane, S. H.; Sonawane, G. H.; Patil, S. P.; Huse, V. R.

2018-03-01

Mg doped ZnO nanoparticles decorated on graphene oxide (GO) sheets were synthesized by a wet impregnation method. The effect of Mg doping on ZnO and ZnO-GO composite has been evaluated by using x-ray diffraction (XRD), Williamson-Hall Plot (Wsbnd H Plot), field emission scanning electron microscope (FESEM), transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDX). The physical parameters of as-prepared samples were estimated by XRD data. FESEM and HR-TEM images showed the uniform distribution of nanoparticles on GO crumpled paper like sheet. Solar light photocatalytic activities of samples were evaluated spectrophotometrically by the degradation of p-nitrophenol (PNP) and indigo carmine (IC) solution. Mgsbnd ZnO decorated on GO sheets exhibit excellent catalytic efficiency compared to all other prepared samples under identical conditions, degrading PNP and IC nearly 99% within 60 min under sunlight. The effective degradation by Mgsbnd ZnO decorated on GO sheet would be due to extended solar light absorption, enhanced adsorptivity on the composite catalyst surface and efficient charge separation of photo-induced electrons. Finally, plausible mechanism was suggested with the help of scavengers study.

Microspherical polyaniline/graphene nanocomposites for high performance supercapacitors

Science.gov (United States)

Cao, Hailiang; Zhou, Xufeng; Zhang, Yiming; Chen, Liang; Liu, Zhaoping

2013-12-01

Polyaniline/graphene nanocomposites with microspherical morphology and porous structure are prepared as electrode materials for supercapacitors. Using few-layer graphene obtained by liquid phase exfoliation of graphite as the raw material, porous graphene microspheres are produced by spray drying, and are then employed as the substrates for the growth of polyaniline nanowire arrays by in situ polymerization. In the composite, interconnected graphene sheets with few structural defects constitute a high-efficient conductive network to improve the electrical conductivity of polyaniline. Furthermore, the microspherical architecture prevents restacking of polyaniline/graphene composite nanosheets, thus facilitates fast diffusion of electrolytes. Consequently, the nanocomposite exhibits excellent electrochemical performance. A specific capacitance of 338 F g-1 is reached in 1 M H2SO4 at a scan rate of 20 mV s-1, and a high capacity retention rate of 87.4% after 10,000 cycles at a current density of 3 A g-1 can be achieved, which suggests that the polyaniline/graphene composite with such kind of 3D architecture is a promising electrode material for high-performance supercapacitors.

Direct Synthesis of Co-doped Graphene on Dielectric Substrates Using Solid Carbon Sources

Institute of Scientific and Technical Information of China (English)

Qi Wang; Pingping Zhang; Qiqi Zhuo; Xiaoxin Lv; Jiwei Wang; Xuhui Sun

2015-01-01

Direct synthesis of high-quality doped graphene on dielectric substrates without transfer is highly desired for simplified device processing in electronic applications.However,graphene synthesis directly on substrates suitable for device applications,though highly demanded,remains unattainable and challenging.Here,a simple and transfer-free synthesis of high-quality doped graphene on the dielectric substrate has been developed using a thin Cu layer as the top catalyst and polycyclic aromatic hydrocarbons as both carbon precursors and doping sources.N-doped and N,F-co-doped graphene have been achieved using TPB and F16Cu Pc as solid carbon sources,respectively.The growth conditions were systematically optimized and the as-grown doped graphene were well characterized.The growth strategy provides a controllable transfer-free route for high-quality doped graphene synthesis,which will facilitate the practical applications of graphene.

Relationships between acute toxicities of para nitrophenol (p-NP) and nitrobenzene (NB) to Daphnia magna and Photobacterium phosphoreum: Physicochemical properties and metabolites under anaerobic/aerobic sequentials

Energy Technology Data Exchange (ETDEWEB)

Sponza, Delia Teresa, E-mail: delya.sponza@deu.edu.tr [Dokuz Eyluel University, Engineering Faculty, Environmental Engineering Department, Buca Kaynaklar Campus, Buca, Izmir (Turkey); Kuscu, Ozlem Selcuk [Department of Environmental Engineering, Engineering and Architecture Faculty, Sueleyman Demirel University, Cuenuer Campus, 32260 Isparta (Turkey)

2011-01-30

In this study, the acute toxicities of nitrobenzene (NB) and para nitrophenol (p-NP) were investigated in a high rate sequential anaerobic migrating blanket (AMBR)/aerobic completely stirred tank reactor (CSTR) using Microtox and Daphnia magna tests. After sequential anaerobic and aerobic treatments, the inhibitions in the Microtox bacteria decreased from an initial 78.10-48.20% and 4.00%, respectively, in wastewater containing 40.00 mg/L p-NP. The inhibitions of the influent wastewater containing 60.00 mg/L NB decreased from 72.10% to 45.30% and to 4.00% after anaerobic and aerobic treatment, respectively. The acute toxicity removals were 94% and 93% in the effluent of the whole sequential system, for p-NP and NB, respectively. The acute toxicity in the influent was dependent on the parent NB and p-NP concentrations and ons their physicochemical properties such as hydrophobicity, octanol/water partition coefficient and vapour density for both Microtox bacteria and Daphnia magna while the toxicity in the effluent of the anaerobic reactor was strongly dependent on the metabolites of p-NP (p-amino phenol, phenol, NH{sub 4}-N) and NB (aniline) for Microtox test. This effluent was not toxic to Daphnia magna.

EDITORIAL: Epitaxial graphene Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire

2012-04-01

nanostructured without patterning the graphene itself. This method produces graphene nanostructures with atomically smooth edges that ultimately determine the transport properties of these structures. The coherent collection of papers in this special issue of Journal of Physics D: Applied Physics provides a snapshot of the current state of the art, presented by leading experts, highlighting various aspects of the science and technology of epitaxial graphene. This collection systematically addresses the production of epitaxial graphene on the two polar faces of silicon carbide, as well as the structural and electronic properties of the graphene films. Special attention is paid to the rapidly emerging field of chemically modified graphene, which promises to introduce a bandgap into the electronic structure of graphene, which is critical for many electronic applications. Also presented are methods to incorporate properties of the silicon carbide itself, as well as advanced methods to produce high-quality graphene and graphene nanostructures using structured growth methods.

Preparation and biological study of 99Tcm(N) (PNP6) (Cyc-RGD) for integrin αvβ3-positive tumor imaging

International Nuclear Information System (INIS)

Chen Baojun; Hu Ji; Liang Jixin; Li Hongyu; Luo Lianzhe; Shen Langtao; Luo Zhifu; Chen Yang

2007-01-01

The Cys-RGD peptide is labelled with 99 Tc m -nitrido core combined with PNP6 lig- and (PNP6=bis (diethoxypropylphosphino ethyl) ethoxy ethylamine) to investigate the possibility of radiolabelled RGD peptides for tumor α v β 3 integrin receptor scintigraphy. The radiochemical purity is measured with HPLC, the in vitro stability is investigated at room temperature and at 37 degree C incubated in the cystein and serum solution. Biodistribution studies and gamma camera imaging are performed in normal mice and nude mice bearing FWK-1 pancreatic tumor xenografts. More than 92% radiolabelling yield is achieved under optimized condition. The high in vitro stability is found for 99 Tc m (N) (PNP6) (Cys-RGD). In vivo biodistribution studies indicate the radiolabelled peptide is cleared rapidly from blood and mainly excreted via urinary system. Tumor uptake is 2.92 ± 0.71%/g at 1 h after injection. The uptake ratios of tumor to blood and tumor to muscle (T/NT) are 11.0 and 3. 1 at 4 h after injection, respectively. Scintigraphic imaging allows contrasting visualisation of α v β 3 -expressed tumors at 1 h after injection. The results suggest 99 Tc m (N) (PNP6) (Cys- RGD) may be the potential agent for α v β 3 -positive tumor imaging. (authors)

High performance supercapacitors based on highly conductive nitrogen-doped graphene sheets.

Science.gov (United States)

Qiu, Yongcai; Zhang, Xinfeng; Yang, Shihe

2011-07-21

Thermal nitridation of reduced graphene oxide sheets yields highly conductive (∼1000-3000 S m(-1)) N-doped graphene sheets, as a result of the restoration of the graphene network by the formation of C-N bonded groups and N-doping. Even without carbon additives, supercapacitors made of the N-doped graphene electrodes can deliver remarkable energy and power when operated at higher voltages, in the range of 0-4 V. This journal is © the Owner Societies 2011

On the utility of vacancies and tensile strain-induced quality factor enhancement for mass sensing using graphene monolayers

International Nuclear Information System (INIS)

Kim, Sung Youb; Park, Harold S

2010-01-01

We have utilized classical molecular dynamics to investigate the mass sensing potential of graphene monolayers, using gold as the model adsorbed atom. In doing so, we report two key findings. First, we find that while perfect graphene monolayers are effective mass sensors at very low (T < 10 K) temperatures, their mass sensing capability is lost at higher temperatures due to diffusion of the adsorbed atom at elevated temperatures. We demonstrate that even if the quality (Q) factors are significantly elevated through the application of tensile mechanical strain, the mass sensing resolution is still lost at elevated temperatures, which demonstrates that high Q-factors alone are insufficient to ensure the mass sensing capability of graphene. Second, we find that while the introduction of single vacancies into the graphene monolayer prevents the diffusion of the adsorbed atom, the mass sensing resolution is still lost at higher temperatures, again due to Q-factor degradation. We finally demonstrate that if the Q-factors of the graphene monolayers with single vacancies are kept acceptably high through the application of tensile strain, then the high Q-factors, in conjunction with the single atom vacancies to stop the diffusion of the adsorbed atom, enable graphene to maintain its mass sensing capability across a range of technologically relevant operating temperatures.

Smooth Growth of Organic Semiconductor Films on Graphene for High-Efficiency Electronics

NARCIS (Netherlands)

Hlawacek, G.; Khokhar, F.S.; van Gastel, Raoul; Poelsema, Bene; Teichert, Christian

2011-01-01

High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron

Singlet-to-triplet ratio in the deuteron breakup reaction pd → pnp at 585 MeV

International Nuclear Information System (INIS)

Uzikov, Yu.N.; Komarov, V.I.; Rathmann, F.; Seyfarth, H.

2001-01-01

Available experimental data on the exclusive pd → pnp reaction at 585 MeV show a narrow peak in the proton-neutron final-state interaction region. It was supposed previously, on the basis of a phenomenological analysis of the shape of this peak, that the final spin-singlet pn state provided about one third of the observed cross section. By comparing the absolute value of the measured cross section with that of pd elastic scattering using the Faeldt-Wilkin extrapolation theorem, it is shown here that the pd → pnp data can be explained mainly by the spin-triplet final state with a singlet admixture of a few percent. The smallness of the singlet contribution is compatible with existing pN → pNπ data and the one-pion exchange mechanism of the pd → pnp reaction

Scalable graphene production from ethanol decomposition by microwave argon plasma torch

Science.gov (United States)

Melero, C.; Rincón, R.; Muñoz, J.; Zhang, G.; Sun, S.; Perez, A.; Royuela, O.; González-Gago, C.; Calzada, M. D.

2018-01-01

A fast, efficient and simple method is presented for the production of high quality graphene on a large scale by using an atmospheric pressure plasma-based technique. This technique allows to obtain high quality graphene in powder in just one step, without the use of neither metal catalysts and nor specific substrate during the process. Moreover, the cost for graphene production is significantly reduced since the ethanol used as carbon source can be obtained from the fermentation of agricultural industries. The process provides an additional benefit contributing to the revalorization of waste in the production of a high-value added product like graphene. Thus, this work demonstrates the features of plasma technology as a low cost, efficient, clean and environmentally friendly route for production of high-quality graphene.

Ionizing/displacement synergistic effects induced by gamma and neutron irradiation in gate-controlled lateral PNP bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Chen, Wei; Yao, Zhibin; Jin, Xiaoming; Liu, Yan; Yang, Shanchao [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Wang, Zhikuan [State Key Laboratory of Analog Integrated Circuit, Chongqing 400060 (China)

2016-09-21

A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to do experimental validations and studies on the ionizing/displacement synergistic effects in the lateral PNP bipolar transistor. The individual and mixed irradiation experiments of gamma rays and neutrons are accomplished on the transistors. The common emitter current gain, gate sweep characteristics and sub-threshold sweep characteristics are measured after each exposure. The results indicate that under the sequential irradiation of gamma rays and neutrons, the response of the gate-controlled lateral PNP bipolar transistor does exhibit ionizing/displacement synergistic effects and base current degradation is more severe than the simple artificial sum of those under the individual gamma and neutron irradiation. Enough attention should be paid to this phenomenon in radiation damage evaluation. - Highlights: • A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to facilitate the analysis of ionizing/displacement synergistic effects induced by the mixed irradiation of gamma and neutron. • The difference between ionizing/displacement synergistic effects and the simple sum of TID and displacement effects is analyzed. • The physical mechanisms of synergistic effects are explained.

Stretchable and High-Performance Supercapacitors with Crumpled Graphene Papers

Science.gov (United States)

Zang, Jianfeng; Cao, Changyong; Feng, Yaying; Liu, Jie; Zhao, Xuanhe

2014-01-01

Fabrication of unconventional energy storage devices with high stretchability and performance is challenging, but critical to practical operations of fully power-independent stretchable electronics. While supercapacitors represent a promising candidate for unconventional energy-storage devices, existing stretchable supercapacitors are limited by their low stretchability, complicated fabrication process, and high cost. Here, we report a simple and low-cost method to fabricate extremely stretchable and high-performance electrodes for supercapacitors based on new crumpled-graphene papers. Electrolyte-mediated-graphene paper bonded on a compliant substrate can be crumpled into self-organized patterns by harnessing mechanical instabilities in the graphene paper. As the substrate is stretched, the crumpled patterns unfold, maintaining high reliability of the graphene paper under multiple cycles of large deformation. Supercapacitor electrodes based on the crumpled graphene papers exhibit a unique combination of high stretchability (e.g., linear strain ~300%, areal strain ~800%), high electrochemical performance (e.g., specific capacitance ~196 F g−1), and high reliability (e.g., over 1000 stretch/relax cycles). An all-solid-state supercapacitor capable of large deformation is further fabricated to demonstrate practical applications of the crumpled-graphene-paper electrodes. Our method and design open a wide range of opportunities for manufacturing future energy-storage devices with desired deformability together with high performance. PMID:25270673

Stretchable and High-Performance Supercapacitors with Crumpled Graphene Papers

Science.gov (United States)

Zang, Jianfeng; Cao, Changyong; Feng, Yaying; Liu, Jie; Zhao, Xuanhe

2014-10-01

Fabrication of unconventional energy storage devices with high stretchability and performance is challenging, but critical to practical operations of fully power-independent stretchable electronics. While supercapacitors represent a promising candidate for unconventional energy-storage devices, existing stretchable supercapacitors are limited by their low stretchability, complicated fabrication process, and high cost. Here, we report a simple and low-cost method to fabricate extremely stretchable and high-performance electrodes for supercapacitors based on new crumpled-graphene papers. Electrolyte-mediated-graphene paper bonded on a compliant substrate can be crumpled into self-organized patterns by harnessing mechanical instabilities in the graphene paper. As the substrate is stretched, the crumpled patterns unfold, maintaining high reliability of the graphene paper under multiple cycles of large deformation. Supercapacitor electrodes based on the crumpled graphene papers exhibit a unique combination of high stretchability (e.g., linear strain ~300%, areal strain ~800%), high electrochemical performance (e.g., specific capacitance ~196 F g-1), and high reliability (e.g., over 1000 stretch/relax cycles). An all-solid-state supercapacitor capable of large deformation is further fabricated to demonstrate practical applications of the crumpled-graphene-paper electrodes. Our method and design open a wide range of opportunities for manufacturing future energy-storage devices with desired deformability together with high performance.

Substrate considerations for graphene synthesis on thin copper films

International Nuclear Information System (INIS)

Howsare, Casey A; Robinson, Joshua A; Weng Xiaojun; Bojan, Vince; Snyder, David

2012-01-01

Chemical vapor deposition on copper substrates is a primary technique for synthesis of high quality graphene films over large areas. While well-developed processes are in place for catalytic growth of graphene on bulk copper substrates, chemical vapor deposition of graphene on thin films could provide a means for simplified device processing through the elimination of the layer transfer process. Recently, it was demonstrated that transfer-free growth and processing is possible on SiO 2 . However, the Cu/SiO 2 /Si material system must be stable at high temperatures for high quality transfer-free graphene. This study identifies the presence of interdiffusion at the Cu/SiO 2 interface and investigates the influence of metal (Ni, Cr, W) and insulating (Si 3 N 4 , Al 2 O 3 , HfO 2 ) diffusion barrier layers on Cu–SiO 2 interdiffusion, as well as graphene structural quality. Regardless of barrier choice, we find the presence of Cu diffusion into the silicon substrate as well as the presence of Cu–Si–O domains on the surface of the copper film. As a result, we investigate the choice of a sapphire substrate and present evidence that it is a robust substrate for synthesis and processing of high quality, transfer-free graphene. (paper)

Graphene growth on Ge(100)/Si(100) substrates by CVD method.

Science.gov (United States)

Pasternak, Iwona; Wesolowski, Marek; Jozwik, Iwona; Lukosius, Mindaugas; Lupina, Grzegorz; Dabrowski, Pawel; Baranowski, Jacek M; Strupinski, Wlodek

2016-02-22

The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous solution. However, the formation of carbide during the growth process makes manufacturing graphene on Si wafers extremely challenging. To overcome these difficulties and reach the set goals, we proposed growth of high quality graphene layers by the CVD method on Ge(100)/Si(100) wafers. In addition, a stochastic model was applied in order to describe the graphene growth process on the Ge(100)/Si(100) substrate and to determine the direction of further processes. As a result, high quality graphene was grown, which was proved by Raman spectroscopy results, showing uniform monolayer films with FWHM of the 2D band of 32 cm(-1).

High-frequency self-aligned graphene transistors with transferred gate stacks

Science.gov (United States)

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-01-01

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits. PMID:22753503

Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

Science.gov (United States)

Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

2018-07-01

We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

Correlator receiver architecture with PnpN optical thyristor operating as optical hard-limiter

Science.gov (United States)

Kang, Tae-Gu; Ho Lee, Su; Park, Soonchul

2011-07-01

We propose novel correlator receiver architecture with a PnpN optical thyristor operating as optical hard-limiter, and demonstrate a multiple-access interference rejection of the proposed correlator receiver. The proposed correlator receiver is composed of the 1×2 splitter, optical delay line, 2×1 combiner, and fabricated PnpN optical thyristor. The proposed correlator receiver enhances the system performance because it excludes some combinations of multiple-access interference patterns from causing errors as in optical code-division multiple access systems with conventional optical receiver shown in all previous works. It is found that the proposed correlator receiver can fully reject the interference signals generated by decoding processing and multiple access for two simultaneous users.

Photosensitive graphene transistors.

Science.gov (United States)

Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

2014-08-20

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly Enhanced Electromechanical Stability of Large-Area Graphene with Increased Interfacial Adhesion Energy by Electrothermal-Direct Transfer for Transparent Electrodes.

Science.gov (United States)

Kim, Jangheon; Kim, Gi Gyu; Kim, Soohyun; Jung, Wonsuk

2016-09-07

Graphene, a two-dimensional sheet of carbon atoms in a hexagonal lattice structure, has been extensively investigated for research and industrial applications as a promising material with outstanding electrical, mechanical, and chemical properties. To fabricate graphene-based devices, graphene transfer to the target substrate with a clean and minimally defective surface is the first step. However, graphene transfer technologies require improvement in terms of uniform transfer with a clean, nonfolded and nontorn area, amount of defects, and electromechanical reliability of the transferred graphene. More specifically, uniform transfer of a large area is a key challenge when graphene is repetitively transferred onto pretransferred layers because the adhesion energy between graphene layers is too low to ensure uniform transfer, although uniform multilayers of graphene have exhibited enhanced electrical and optical properties. In this work, we developed a newly suggested electrothermal-direct (ETD) transfer method for large-area high quality monolayer graphene with less defects and an absence of folding or tearing of the area at the surface. This method delivers uniform multilayer transfer of graphene by repetitive monolayer transfer steps based on high adhesion energy between graphene layers and the target substrate. To investigate the highly enhanced electromechanical stability, we conducted mechanical elastic bending experiments and reliability tests in a highly humid environment. This ETD-transferred graphene is expected to replace commercial transparent electrodes with ETD graphene-based transparent electrodes and devices such as a touch panels with outstanding electromechanical stability.

Surfactant mediated liquid phase exfoliation of graphene

Science.gov (United States)

Narayan, Rekha; Kim, Sang Ouk

2015-10-01

Commercialization of graphene based applications inevitably requires cost effective mass production. From the early days of research on graphene, direct liquid phase exfoliation (LPE) of graphite has been considered as the most promising strategy to produce high-quality mono or few-layer graphene sheets in solvent dispersion forms. Substantial success has been achieved thus far in the LPE of graphene employing numerous solvent systems and suitable surfactants. This invited review article principally showcase the recent research progress as well as shortcomings of surfactant assisted LPE of graphene. In particular, a comprehensive assessment of the quality and yield of the graphene sheets produced by different categories of the surfactants are summarized. Future direction of LPE methods is also proposed for the eventual success of commercial applications.

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Energy Technology Data Exchange (ETDEWEB)

Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2014-02-03

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

Implemented Crime Prevention Strategies of PNP in Salug Valley, Zamboanga Del Sur, Philippines

Directory of Open Access Journals (Sweden)

Mark E. Patalinghug

2017-05-01

Full Text Available This study aimed primarily to determine the effectiveness of crime prevention strategies implemented by the Salug Valley Philippine National Police (PNP in terms of Police Integrated Patrol System, Barangay Peacekeeping Operation, Anti - Criminality Operation, Integrated Area Community Public Safety services, Bantay Turista and Scho ol Safety Project as evaluated by 120 inhabitants and 138 PNP officers from four Municipalities of Salug Valley Zamboanga del Sur. Stratified random sampling was utilized in determining the respondents. Index crime rate were correlated with the crime preve ntion strategies of the PNP in town of Salug Valley. A descriptive method of research was applied in this study utilizing self - made questionnaire. The data collected were analyzed using the main statistical tools like frequency count, percentage, mean com putation, Kruskal Wallis Analysis of Variance and simple correlation. Findings of the study revealed that the crime prevention strategies in four (4 municipalities were “much effective” to include Integrated Patrol System, Barangay Peace Keeping Operation s, Anti - Criminality Operations, Integrated Area Community Public Safety Services, Bantay Turista and School Safety Project in connection to the responses of 158 participants. There is a significant relationship between crime prevention strategies employed and index crime rate.

Synthesis of graphene through direct decomposition of CO2 with the ...

Indian Academy of Sciences (India)

The obtained graphene was characterized by Raman spectroscopy, and the results proved that high-quality graphene ... methanol storage materials [5], graphene with a large, high- .... trifuged. The result was filtered and washed with ethanol.

High-performance metal mesh/graphene hybrid films using prime-location and metal-doped graphene.

Science.gov (United States)

Min, Jung-Hong; Jeong, Woo-Lim; Kwak, Hoe-Min; Lee, Dong-Seon

2017-08-31

We introduce high-performance metal mesh/graphene hybrid transparent conductive layers (TCLs) using prime-location and metal-doped graphene in near-ultraviolet light-emitting diodes (NUV LEDs). Despite the transparency and sheet resistance values being similar for hybrid TCLs, there were huge differences in the NUV LEDs' electrical and optical properties depending on the location of the graphene layer. We achieved better physical stability and current spreading when the graphene layer was located beneath the metal mesh, in direct contact with the p-GaN layer. We further improved the contact properties by adding a very thin Au mesh between the thick Ag mesh and the graphene layer to produce a dual-layered metal mesh. The Au mesh effectively doped the graphene layer to create a p-type electrode. Using Raman spectra, work function variations, and the transfer length method (TLM), we verified the effect of doping the graphene layer after depositing a very thin metal layer on the graphene layers. From our results, we suggest that the nature of the contact is an important criterion for improving the electrical and optical performance of hybrid TCLs, and the method of doping graphene layers provides new opportunities for solving contact issues in other semiconductor devices.

Liquid crystallinity driven highly aligned large graphene oxide composites

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyung Eun; Oh, Jung Jae; Yun, Taeyeong [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701 (Korea, Republic of); Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Kim, Sang Ouk, E-mail: sangouk.kim@kaist.ac.kr [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701 (Korea, Republic of); Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of)

2015-04-15

Graphene is an emerging graphitic carbon materials, consisting of sp{sup 2} hybridized two dimensinal honeycomb structure. It has been widely studied to incorporate graphene with polymer to utilize unique property of graphene and reinforce electrical, mechanical and thermal property of polymer. In composite materials, orientation control of graphene significantly influences the property of composite. Until now, a few method has been developed for orientation control of graphene within polymer matrix. Here, we demonstrate facile fabrication of high aligned large graphene oxide (LGO) composites in polydimethylsiloxane (PDMS) matrix exploiting liquid crystallinity. Liquid crystalline aqueous dispersion of LGO is parallel oriented within flat confinement geometry. Freeze-drying of the aligned LGO dispersion and subsequent infiltration with PDMS produce highly aligned LGO/PDMS composites. Owing to the large shape anisotropy of LGO, liquid crystalline alignment occurred at low concentration of 2 mg/ml in aqueous dispersion, which leads to the 0.2 wt% LGO loaded composites. - Graphical abstract: Liquid crystalline LGO aqueous dispersions are spontaneous parallel aligned between geometric confinement for highly aligned LGO/polymer composite fabrication. - Highlights: • A simple fabrication method for highly aligned LGO/PDMS composites is proposed. • LGO aqueous dispersion shows nematic liquid crystalline phase at 0.8 mg/ml. • In nematic phase, LGO flakes are highly aligned by geometric confinement. • Infiltration of PDMS into freeze-dried LGO allows highly aligned LGO/PDMS composites.

Graphene production by dissociation of camphor molecules on nickel substrate

Energy Technology Data Exchange (ETDEWEB)

Ravani, Fotini [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Interdepartmental Program in Polymer Science and Technology, University of Patras, 26504, Patras (Greece); Papagelis, Konstantinos [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Department of Materials Science, University of Patras, 26504, Patras (Greece); Dracopoulos, Vassileios; Parthenios, John [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Dassios, Konstantinos G. [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Department of Material Science and Engineering, University of Ioannina, 45110, Ioannina (Greece); Siokou, Angeliki [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Galiotis, Costas, E-mail: c.galiotis@iceht.forth.gr [Foundation of Research and Technology — Hellas, Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504, Patras (Greece); Interdepartmental Program in Polymer Science and Technology, University of Patras, 26504, Patras (Greece); Department of Materials Science, University of Patras, 26504, Patras (Greece)

2013-01-01

A chemical vapor deposition (CVD) process for the production of continuous-high quality-graphene layers based on camphor decomposition on polycrystalline Ni foil, is demonstrated. In situ X-ray diffraction at the pyrolysis temperature of the Ni foil indicates the presence of dominant Ni <111> grains which play an important role in the carbon nucleation and growth. The topography of the grown graphene layers is studied by scanning electron microscopy and atomic force microscopy which show that the Ni surface is covered by continuous and wrinkled graphene carpets. Raman spectroscopy reveals the high quality of the graphene film which appears to be only a few monolayers thick. X-ray photoelectron spectroscopy indicates the existence of graphitic layers and the absence of any spectral features associated with carbides (Ni{sub x}C). The proposed CVD process is a sufficient method for large scale production of graphene films. - Highlights: ► An inexpensive chemical vapor deposition method based on camphor is presented. ► Few-layer graphene carpets of high quality are produced on polycrystalline Ni. ► The working deposition temperature is decreased by about 15%. ► Natural cooling is employed for graphene production. ► Role of Ni surface texture upon the graphene growth process is demonstrated.

Non-vacuum growth of graphene films using solid carbon source

International Nuclear Information System (INIS)

Nguyen, Ba-Son; Lin, Jen-Fin; Perng, Dung-Ching

2015-01-01

This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO 2 capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications

Non-vacuum growth of graphene films using solid carbon source

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Ba-Son [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Faculty of Mechatronics – Electronics, Lac Hong University, 10 Huynh Van Nghe Road, Bienhoa (Viet Nam); Lin, Jen-Fin, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

2015-06-01

This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO{sub 2} capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications.

Molecular beam epitaxy of graphene on mica

International Nuclear Information System (INIS)

Lippert, G.; Dabrowski, J.; Yamamoto, Y.; Mehr, W.; Lupina, G.; Herziger, F.; Maultzsch, J.; Baringhaus, J.; Tegenkamp, C.; Lemme, M.C.

2012-01-01

Realization of graphene devices is often hindered by the fact that the known layer growth methods do not meet the requirements of the device fabrication in silicon mainstream technology. For example, the relatively straightforward method of decomposition of hexagonal SiC is not CMOS-compatible due to the high-thermal budget it requires [Moon et al., IEEE Electron Device Lett. 31, 260 (2010)]. Techniques based on layer transfer are restricted because of the uncertainty of residual metal contaminants, particles, and structural defects. Of interest is thus a method that would allow one to grow a graphene film directly in the device area where graphene is needed. Production of large area graphene is not necessarily required in this case, but high quality of the film and metal-free growth on an insulating substrate at temperatures below 1000 C are important requirements. We demonstrate direct growth of defect-free graphene on insulators at moderate temperatures by molecular beam epitaxy. The quality of the graphene was probed by high-resolution Raman spectroscopy, indicating a negligible density of defects. The spectra are compared with those from graphene flakes mechanically exfoliated from native graphite onto mica. These results are combined with insights from density functional theory calculations. A model of graphene growth on mica and similar substrates is proposed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

CVD-graphene growth on different polycrystalline transition metals

Directory of Open Access Journals (Sweden)

M. P. Lavin-Lopez

2017-01-01

Full Text Available The chemical vapor deposition (CVD graphene growth on two polycrystalline transition metals (Ni and Cu was investigated in detail using Raman spectroscopy and optical microscopy as a way to synthesize graphene of the highest quality (i.e. uniform growth of monolayer graphene, which is considered a key issue for electronic devices. Key CVD process parameters (reaction temperature, CH4/H2flow rate ratio, total flow of gases (CH4+H2, reaction time were optimized for both metals in order to obtain the highest graphene uniformity and quality. The conclusions previously reported in literature about the performance of low and high carbon solubility metals in the synthesis of graphene and their associated reaction mechanisms, i.e. surface depositionand precipitation on cooling, respectively, was not corroborated by the results obtained in this work. Under the optimal reaction conditions, a large percentage of monolayer graphene was obtained over the Ni foil since the carbon saturation was not complete, allowing carbon atoms to be stored in the bulk metal, which could diffuse forming high quality monolayer graphene at the surface. However, under the optimal reaction conditions, the formation of a non-uniform mixture of few layers and multilayer graphene on the Cu foil was related to the presence of an excess of active carbon atoms on the Cu surface.

Structured epitaxial graphene: growth and properties

International Nuclear Information System (INIS)

Hu Yike; Ruan Ming; Guo Zelei; Dong Rui; Palmer, James; Hankinson, John; Berger, Claire; Heer, Walt A de

2012-01-01

Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micrometre-sized ultrahigh-frequency analogue field effect transistors and quantum Hall effect devices for metrology. Nanoscopically patterned graphene tends to have disordered edges that severely reduce mobilities thereby obviating its advantage over other materials. Here we show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. We show that high-quality ribbons and rings can be made using this technique. We also report on the progress towards high-mobility graphene monolayers on silicon carbide for device applications. (paper)

Direct Growth of Graphene Films on 3D Grating Structural Quartz Substrates for High-Performance Pressure-Sensitive Sensors.

Science.gov (United States)

Song, Xuefen; Sun, Tai; Yang, Jun; Yu, Leyong; Wei, Dacheng; Fang, Liang; Lu, Bin; Du, Chunlei; Wei, Dapeng

2016-07-06

Conformal graphene films have directly been synthesized on the surface of grating microstructured quartz substrates by a simple chemical vapor deposition process. The wonderful conformality and relatively high quality of the as-prepared graphene on the three-dimensional substrate have been verified by scanning electron microscopy and Raman spectra. This conformal graphene film possesses excellent electrical and optical properties with a sheet resistance of 80% (at 550 nm), which can be attached with a flat graphene film on a poly(dimethylsiloxane) substrate, and then could work as a pressure-sensitive sensor. This device possesses a high-pressure sensitivity of -6.524 kPa(-1) in a low-pressure range of 0-200 Pa. Meanwhile, this pressure-sensitive sensor exhibits super-reliability (≥5000 cycles) and an ultrafast response time (≤4 ms). Owing to these features, this pressure-sensitive sensor based on 3D conformal graphene is adequately introduced to test wind pressure, expressing higher accuracy and a lower background noise level than a market anemometer.

Urea-assisted liquid-phase exfoliation of natural graphite into few-layer graphene

Science.gov (United States)

Hou, Dandan; Liu, Qinfu; Wang, Xianshuai; Qiao, Zhichuan; Wu, Yingke; Xu, Bohui; Ding, Shuli

2018-05-01

The mass production of graphene with high quality is desirable for its wide applications. Here, we demonstrated a facile method to exfoliate natural graphite into graphene in organic solvent by assisting of urea. The exfoliation of graphite may originate from the "molecular wedge" effect of urea, which can intercalate into the edge of natural graphite, thus facilitating the production of graphene dispersion with a high concentration up to 1.2 mg/mL. The obtained graphene is non-oxidized with negligible defects. Therefore, this approach has great promise in bulk production of graphene with superior quality for a variety of applications.

The Arabidopsis thaliana natriuretic peptide AtPNP-A is a systemic regulator of leaf dark respiration and signals via the phloem

KAUST Repository

Ruzvidzo, Oziniel; Donaldson, Lara Elizabeth; Valentine, Alex J.; Gehring, Christoph A

2011-01-01

-molar concentrations. Here we show that a recombinant Arabidopsis thaliana PNP (AtPNP-A) rapidly increased the rate of dark respiration in treated leaves after 5 min. In addition, we observed increases in lower leaves, and with a lag time of 10 min, the effect spread

The Arabidopsis thaliana natriuretic peptide AtPNP-A is a systemic regulator of leaf dark respiration and signals via the phloem

KAUST Repository

Ruzvidzo, Oziniel

2011-09-01

Plant natriuretic peptides (PNPs) belong to a novel class of peptidic signaling molecules that share some structural similarity to the N-terminal domain of expansins and affect physiological processes such as water and ion homeostasis at nano-molar concentrations. Here we show that a recombinant Arabidopsis thaliana PNP (AtPNP-A) rapidly increased the rate of dark respiration in treated leaves after 5 min. In addition, we observed increases in lower leaves, and with a lag time of 10 min, the effect spread to the upper leaves and subsequently (after 15 min) to the opposite leaves. This response signature is indicative of phloem mobility of the signal, a hypothesis that was further strengthened by the fact that cold girdling, which affects phloem but not xylem or apoplastic processes, delayed the long distance AtPNP-A effect. We conclude that locally applied AtPNP-A can induce a phloem-mobile signal that rapidly modifies plant homeostasis in distal parts. © 2011 Elsevier GmbH.

Avidin-biotin system: a small library of cysteine biotinylated derivatives designed for the [99mTc(N)(PNP)]2+ metal fragment

International Nuclear Information System (INIS)

Bolzati, Cristina; Caporale, Andrea; Agostini, Stefania; Carta, Davide; Cavazza-Ceccato, Mario; Refosco, Fiorenzo; Tisato, Francesco; Schievano, Elisabetta; Bandoli, Giuliano

2007-01-01

Using the avidin-biotin system as model, we investigate here the effective application of [Tc(N)L(PNP)] +/0 technology (L=N-functionalized cysteine [O - ,S - ]; PNP=aminodiphosphine) to the preparation of target-specific radiopharmaceuticals. A series of 99m Tc-nitrido complexes containing functionalized biotin ligands was prepared and their biological profile was determined. To minimize the steric and the electronic influences of the Tc-carrying complex on the biotin-avidin receptor interaction, the following N-functionalized cysteine-biotin derivatives were synthesized: (1) Biot-CysOSH; (2) Biot-Abu-CysOSH; (3) Biot-Abz-CysOSH; (4) Biot-L-(Ac)Lys-CysOSH; (5) Biot-D-(Ac)Lys-CysOSH; (6) Biot-Glu-CysOSH. The asymmetrical nitrido-Tc(V) 99g/99m Tc(N)(Biot-X-CysOS)(PNP3) (X=spacer) complexes, where PNP3 was N,N-bis-[(dimethoxypropyl)phosphinoethyl] methoxy-ethylamine, were obtained by simultaneous addition of PNP3 and the relevant biotinylated ligand to a solution containing a 99m Tc-nitrido precursor (yields >95%). In all cases, a mixture of syn- and anti isomers was observed. In vitro challenge experiments with glutathione and cysteine indicated that no transchelation reactions occurred. Assessment of the in vitro binding to avidin of the complexes revealed that only the complexes containing Biot-Abu-CysOS and Biot-Glu-CysOS ligand maintained a good affinity for the concentrator. Stability studies carried out in human and mouse plasma as well as in rat and mouse liver homogenate evidenced a rapid enzymatic degradation for the 99m Tc(N)(Biot-Abu-CysOS)(PNP3) complex, whereas the 99m Tc(N)(Biot-Glu-CysOS)(PNP3) one was stable in all conditions. Tissue biodistribution in normal Balb/C mice of the most stable candidate showed a rapid clearance both from the blood and the other tissues. The activity was eliminated both through the hepatobiliary system and the urinary tract

The effects of emitter-tied field plates on lateral PNP ionizing radiation response

International Nuclear Information System (INIS)

Barnaby, H.J.; Schrimpf, R.D.; Cirba, C.R.; Pease, R.L.; Fleetwood, D.M.; Kosier, S.L.

1998-03-01

Radiation response comparisons of lateral PNP bipolar technologies reveal that device hardening may be achieved by extending the emitter contact over the active base. The emitter-tied field plate suppresses recombination of carriers with interface traps

Unstacked double-layer templated graphene for high-rate lithium-sulphur batteries

Science.gov (United States)

Zhao, Meng-Qiang; Zhang, Qiang; Huang, Jia-Qi; Tian, Gui-Li; Nie, Jing-Qi; Peng, Hong-Jie; Wei, Fei

2014-03-01

Preventing the stacking of graphene is essential to exploiting its full potential in energy-storage applications. The introduction of spacers into graphene layers always results in a change in the intrinsic properties of graphene and/or induces complexity at the interfaces. Here we show the synthesis of an intrinsically unstacked double-layer templated graphene via template-directed chemical vapour deposition. The as-obtained graphene is composed of two unstacked graphene layers separated by a large amount of mesosized protuberances and can be used for high-power lithium-sulphur batteries with excellent high-rate performance. Even after 1,000 cycles, high reversible capacities of ca. 530 mA h g-1 and 380 mA h g-1 are retained at 5 C and 10 C, respectively. This type of double-layer graphene is expected to be an important platform that will enable the investigation of stabilized three-dimensional topological porous systems and demonstrate the potential of unstacked graphene materials for advanced energy storage, environmental protection, nanocomposite and healthcare applications.

Renewing functionalized graphene as electrodes for high-performance supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Fang, Yan [National Center for Nanoscience and Technology, Zhongguancun, Beiyitiao No.11, Beijing, 100190 (China); Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084 (China); Luo, Bin; Jia, Yuying; Li, Xianglong; Wang, Bin; Song, Qi [National Center for Nanoscience and Technology, Zhongguancun, Beiyitiao No.11, Beijing, 100190 (China); Kang, Feiyu [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084 (China); Zhi, Linjie [National Center for Nanoscience and Technology, Zhongguancun, Beiyitiao No.11, Beijing, 100190 (China); School of Materials Science and Engineering, University of Shanghai for Science and Technology, Jungong Road 516, 200093, Shanghai (China)

2012-12-11

An acid-assisted ultrarapid thermal strategy is developed for constructing specifically functionalized graphene. The electrochemical performance of functionalized graphene can be boosted via elaborate coupling between the pseudocapacitance and the electronic double layer capacitance through rationally tailoring the structure of graphene sheets. This presents an opportunity for developing further high-performance graphene-based electrodes to bridge the performance gap between traditional capacitors and batteries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Renewing functionalized graphene as electrodes for high-performance supercapacitors.

Science.gov (United States)

Fang, Yan; Luo, Bin; Jia, Yuying; Li, Xianglong; Wang, Bin; Song, Qi; Kang, Feiyu; Zhi, Linjie

2012-12-11

An acid-assisted ultrarapid thermal strategy is developed for constructing specifically functionalized graphene. The electrochemical performance of functionalized graphene can be boosted via elaborate coupling between the pseudocapacitance and the electronic double layer capacitance through rationally tailoring the structure of graphene sheets. This presents an opportunity for developing further high-performance graphene-based electrodes to bridge the performance gap between traditional capacitors and batteries. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Reliable processing of graphene using metal etchmasks

Directory of Open Access Journals (Sweden)

Peltekis Nikos

2011-01-01

Full Text Available Abstract Graphene exhibits exciting properties which make it an appealing candidate for use in electronic devices. Reliable processes for device fabrication are crucial prerequisites for this. We developed a large area of CVD synthesis and transfer of graphene films. With patterning of these graphene layers using standard photoresist masks, we are able to produce arrays of gated graphene devices with four point contacts. The etching and lift off process poses problems because of delamination and contamination due to polymer residues when using standard resists. We introduce a metal etch mask which minimises these problems. The high quality of graphene is shown by Raman and XPS spectroscopy as well as electrical measurements. The process is of high value for applications, as it improves the processability of graphene using high-throughput lithography and etching techniques.

Advanced Asymmetrical Supercapacitors Based on Graphene Hybrid Materials

OpenAIRE

Wang, Hailiang; Liang, Yongye; Mirfakhrai, Tissaphern; Chen, Zhuo; Casalongue, Hernan Sanchez; Dai, Hongjie

2011-01-01

Supercapacitors operating in aqueous solutions are low cost energy storage devices with high cycling stability and fast charging and discharging capabilities, but have suffered from low energy densities. Here, we grow Ni(OH)2 nanoplates and RuO2 nanoparticles on high quality graphene sheets to maximize the specific capacitances of these materials. We then pair up a Ni(OH)2/graphene electrode with a RuO2/graphene electrode to afford a high performance asymmetrical supercapacitor with high ener...

Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics.

Science.gov (United States)

Behranginia, Amirhossein; Yasaei, Poya; Majee, Arnab K; Sangwan, Vinod K; Long, Fei; Foss, Cameron J; Foroozan, Tara; Fuladi, Shadi; Hantehzadeh, Mohammad Reza; Shahbazian-Yassar, Reza; Hersam, Mark C; Aksamija, Zlatan; Salehi-Khojin, Amin

2017-08-01

Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS 2 -graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS 2 -graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS 2 -metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS 2 -graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Efficiency Graphene Photo Sensor Using a Transparent Electrode

Institute of Scientific and Technical Information of China (English)

LIU Tao; HUANG Zheng

2011-01-01

We report the first implementation of transparent electrodes in bottom-gate graphene transistors used for photo detection.Compared to conventional nontransparent electrodes,the transparent electrodes allow photons to transmit through to the graphene beneath,providing an enlarged absorption area and thereby giving rise to an enhancement of photocurrent generation.The devices are fabricated with an asymmetric metallization scheme and the experimental results show that the maximum photocurrent density using the transparent electrodes (ITO and Pd/ITO) is over two times higher than that using the nontransparent electrodes (Ti and Pd),indicating a significant enhancement in the performance of graphene photo sensors.Graphene,a single-atomic-layer of carbon atoms with a zero-gap band structure has received great attention recently.[1-4] One promising application of graphene is in high-speed photodetection,owing to its high Fermi velocity (～1/300 of the speed of light),high electrical mobility (200000 cm2/Vs for both electrons and holes) and zero-gap induced wide absorption spectrum (in the visible-to-infrared range).[5,6]%We report the first implementation of transparent electrodes in bottom-gate graphene transistors used for photo detection. Compared to conventional nontransparent electrodes, the transparent electrodes allow photons to transmit through to the graphene beneath, providing an enlarged absorption area and thereby giving rise to an enhancement of photocurrent generation. The devices are fabricated with an asymmetric metallization scheme and the experimental results show that the maximum photocurrent density using the transparent electrodes (ITO and Pd/ITO) is over two times higher than that using the nontransparent electrodes (Ti and Pd), indicating a significant enhancement in the performance of graphene photo sensors.

Graphene-Based Flexible and Transparent Tunable Capacitors.

Science.gov (United States)

Man, Baoyuan; Xu, Shicai; Jiang, Shouzheng; Liu, Aihua; Gao, Shoubao; Zhang, Chao; Qiu, Hengwei; Li, Zhen

2015-12-01

We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

Advanced asymmetric supercapacitors based on Ni(OH){sub 2}/graphene and porous graphene electrodes with high energy density

Energy Technology Data Exchange (ETDEWEB)

Yan, Jun; Fan, Zhuangjun; Sun, Wei; Wei, Tong [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Ning, Guoqing [State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249 (China); Zhang, Qiang; Zhang, Rufan; Wei, Fei [Beijing Key Laboratory of Green Chemical Reaction, Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing 100084 (China); Zhi, Linjie [National Center for Nanoscience and Technology of China, Zhongguancun, Beiyitiao 11, Beijing 100190 (China)

2012-06-20

Hierarchical flowerlike nickel hydroxide decorated on graphene sheets has been prepared by a facile and cost-effective microwave-assisted method. In order to achieve high energy and power densities, a high-voltage asymmetric supercapacitor is successfully fabricated using Ni(OH){sub 2}/graphene and porous graphene as the positive and negative electrodes, respectively. Because of their unique structure, both of these materials exhibit excellent electrochemical performances. The optimized asymmetric supercapacitor could be cycled reversibly in the high-voltage region of 0-1.6 V and displays intriguing performances with a maximum specific capacitance of 218.4 F g{sup -1} and high energy density of 77.8 Wh kg{sup -1}. Furthermore, the Ni(OH){sub 2}/graphene//porous graphene supercapacitor device exhibits an excellent long cycle life along with 94.3% specific capacitance retained after 3000 cycles. These fascinating performances can be attributed to the high capacitance and the positive synergistic effects of the two electrodes. The impressive results presented here may pave the way for promising applications in high energy density storage systems. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Exfoliation of graphite into graphene in aqueous solutions of inorganic salts.

Science.gov (United States)

Parvez, Khaled; Wu, Zhong-Shuai; Li, Rongjin; Liu, Xianjie; Graf, Robert; Feng, Xinliang; Müllen, Klaus

2014-04-23

Mass production of high-quality graphene sheets is essential for their practical application in electronics, optoelectronics, composite materials, and energy-storage devices. Here we report a prompt electrochemical exfoliation of graphene sheets into aqueous solutions of different inorganic salts ((NH4)2SO4, Na2SO4, K2SO4, etc.). Exfoliation in these electrolytes leads to graphene with a high yield (>85%, ≤3 layers), large lateral size (up to 44 μm), low oxidation degree (a C/O ratio of 17.2), and a remarkable hole mobility of 310 cm(2) V(-1) s(-1). Further, highly conductive graphene films (11 Ω sq(-1)) are readily fabricated on an A4-size paper by applying brush painting of a concentrated graphene ink (10 mg mL(-1), in N,N'-dimethylformamide). All-solid-state flexible supercapacitors manufactured on the basis of such graphene films deliver a high area capacitance of 11.3 mF cm(-2) and an excellent rate capability of 5000 mV s(-1). The described electrochemical exfoliation shows great promise for the industrial-scale synthesis of high-quality graphene for numerous advanced applications.

Suppression of intrinsic roughness in encapsulated graphene

DEFF Research Database (Denmark)

Thomsen, Joachim Dahl; Gunst, Tue; Gregersen, Søren Schou

2017-01-01

Roughness in graphene is known to contribute to scattering effects which lower carrier mobility. Encapsulating graphene in hexagonal boron nitride (hBN) leads to a significant reduction in roughness and has become the de facto standard method for producing high-quality graphene devices. We have...... fabricated graphene samples encapsulated by hBN that are suspended over apertures in a substrate and used noncontact electron diffraction measurements in a transmission electron microscope to measure the roughness of encapsulated graphene inside such structures. We furthermore compare the roughness...... of these samples to suspended bare graphene and suspended graphene on hBN. The suspended heterostructures display a root mean square (rms) roughness down to 12 pm, considerably less than that previously reported for both suspended graphene and graphene on any substrate and identical within experimental error...

Investigation of transfer characteristics of high performance graphene flakes.

Science.gov (United States)

Venugopal, Gunasekaran; Krishnamoorthy, Karthikeyan; Kim, Sang-Jae

2013-05-01

In this article, we attempted a study on field effect transport characteristics of graphene flakes. These graphene flakes were exfoliated by mechanical peeling-off technique and the electrical contacts were patterned by photo-lithographic method. Graphene devices have shown better transfer characteristics which was obtained even in low-voltage (graphene transistors were patterned on oxidized silicon wafers. A clear n-type to p-type transition at Dirac point and higher electron drain-current modulation in positive back-gate field with current minimum (the Dirac point) were observed at V(GS) = -1.7 V. The carrier mobility was determined from the measured transconductance. The transconductance of the graphene transistors was observed as high as 18.6 microS with a channel length of 68 microm. A maximum electron mobility of 1870 +/- 143 cm2/V x s and hole mobility of 1050 +/- 35 cm2/V x s were achieved at a drain bias 2.1 V which are comparatively higher values among reported for mechanically exfoliated graphene using lithographic method. The fabricated devices also sustained with high-current density for 40 hr in continuous operation without any change in device resistance, which could be applied for robust wiring applications.

High-efficiency supercapacitor electrodes of CVD-grown graphenes hybridized with multiwalled carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Kalam, Amir Abul; Bae, Joon Ho [Dept. of Nano-physics, Gachon University, Seongnam (Korea, Republic of); Park, Soo Bin; Seo, Yong Ho [Nanotechnology and Advanced Material Engineering, HMC, and GRI, Sejong University, Seoul (Korea, Republic of)

2015-08-15

We demonstrate, for the first time, high-efficiency supercapacitors by utilizing chemical vapor deposition (CVD)-grown graphenes hybridized with multiwalled carbon nanotubes (CNTs). A single-layer graphene was grown by simple CVD growth method, and transferred to polyethylene terephthalate substrates. The bare graphenes were further hybridized with multiwalled CNTs by drop-coating CNTs on graphenes. The supercapacitors using bare graphenes and graphenes with CNTs revealed that graphenes with CNTs resulted in enhanced supercapacitor performances of 2.2- (the mass-specific capacitance) and 4.4-fold (the area-specific capacitance) of those of bare graphenes. Our strategy to improve electrochemical performance of CVD-grown graphenes is advantageous for large-scale graphene electrodes due to high electrical conductivity of CVD-grown graphenes and cost-effectiveness of using multiwalled CNTs as compared to conventional employment of single-walled CNTs.

High-efficiency supercapacitor electrodes of CVD-grown graphenes hybridized with multiwalled carbon nanotubes

International Nuclear Information System (INIS)

Kalam, Amir Abul; Bae, Joon Ho; Park, Soo Bin; Seo, Yong Ho

2015-01-01

We demonstrate, for the first time, high-efficiency supercapacitors by utilizing chemical vapor deposition (CVD)-grown graphenes hybridized with multiwalled carbon nanotubes (CNTs). A single-layer graphene was grown by simple CVD growth method, and transferred to polyethylene terephthalate substrates. The bare graphenes were further hybridized with multiwalled CNTs by drop-coating CNTs on graphenes. The supercapacitors using bare graphenes and graphenes with CNTs revealed that graphenes with CNTs resulted in enhanced supercapacitor performances of 2.2- (the mass-specific capacitance) and 4.4-fold (the area-specific capacitance) of those of bare graphenes. Our strategy to improve electrochemical performance of CVD-grown graphenes is advantageous for large-scale graphene electrodes due to high electrical conductivity of CVD-grown graphenes and cost-effectiveness of using multiwalled CNTs as compared to conventional employment of single-walled CNTs

Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

Science.gov (United States)

Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

2015-03-12

Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

Expansion and exfoliation of graphite to form graphene

KAUST Repository

Patole, Shashikan P.

2017-07-27

Graphene production methods are described based on subjecting non- covalent graphite intercalated compounds, such as graphite bisulfate, to expansion conditions such as shocks of heat and/or microwaves followed by turbulence-assisted exfoliation to produce few-layer, high quality graphene flakes. Depending on the approach selected for the exfoliation step, free-flowing graphene powder, graphene slurry, or an aqueous graphene mixture can be obtained. Surfactants can aid in dispersion, and graphene inks can be formed. The parameters of the process are simple, efficient and low-cost enabling therefore the scale- up of production. Applications include electrodes and energy storage devices.

Fabrication of oxide-free graphene suspension and transparent thin films using amide solvent and thermal treatment

International Nuclear Information System (INIS)

Oh, Se Young; Kim, Sung Hwan; Chi, Yong Seung; Kang, Tae Jin

2012-01-01

Graphical abstract: New methodology for suspended graphene sheets of high-quality (oxide-free), high-yield (high concentration) using amide solvent exfoliation and thermal treatment at 800 °C. We confirmed that the van der Waals force between the graphene layers decreases as increasing thermal treatment temperatures as shown XRD data (b). Highlights: ► Propose of new methodology to prepare oxide-free graphene sheets suspension. ► The graphene suspension concentration is enhanced by thermal treatment. ► Decrease of van der Waals force between the graphene layers by high temperature and pressure. ► This method has the potential as technology for mass production. ► It could be applied in transparent and flexible electronic devices. - Abstract: High quality graphene sheets were produced from graphite by liquid phase exfoliation using N-methyl-2-pyrrolidone (NMP) and a subsequent thermal treatment to enhance the exfoliation. The exfoliation was enhanced by treatment with organic solvent and high thermal expansion producing high yields of the high-quality and defect-free graphene sheets. The graphene was successfully deposited on a flexible and transparent polymer film using the vacuum filtration method. SEM images of thin films of graphene treated at 800 °C showed uniform structure with no defects commonly found in films made of graphene produced by other techniques. Thin films of graphene prepared at higher temperatures showed superior transmittance and conductivity. The sheet-resistance of the graphene film treated at 800 °C was 2.8 × 10 3 kΩ/□ with 80% transmittance.

Highly Conductive Graphene/Ag Hybrid Fibers for Flexible Fiber-Type Transistors.

Science.gov (United States)

Yoon, Sang Su; Lee, Kang Eun; Cha, Hwa-Jin; Seong, Dong Gi; Um, Moon-Kwang; Byun, Joon-Hyung; Oh, Youngseok; Oh, Joon Hak; Lee, Wonoh; Lee, Jea Uk

2015-11-09

Mechanically robust, flexible, and electrically conductive textiles are highly suitable for use in wearable electronic applications. In this study, highly conductive and flexible graphene/Ag hybrid fibers were prepared and used as electrodes for planar and fiber-type transistors. The graphene/Ag hybrid fibers were fabricated by the wet-spinning/drawing of giant graphene oxide and subsequent functionalization with Ag nanoparticles. The graphene/Ag hybrid fibers exhibited record-high electrical conductivity of up to 15,800 S cm(-1). As the graphene/Ag hybrid fibers can be easily cut and placed onto flexible substrates by simply gluing or stitching, ion gel-gated planar transistors were fabricated by using the hybrid fibers as source, drain, and gate electrodes. Finally, fiber-type transistors were constructed by embedding the graphene/Ag hybrid fiber electrodes onto conventional polyurethane monofilaments, which exhibited excellent flexibility (highly bendable and rollable properties), high electrical performance (μh = 15.6 cm(2) V(-1) s(-1), Ion/Ioff > 10(4)), and outstanding device performance stability (stable after 1,000 cycles of bending tests and being exposed for 30 days to ambient conditions). We believe that our simple methods for the fabrication of graphene/Ag hybrid fiber electrodes for use in fiber-type transistors can potentially be applied to the development all-organic wearable devices.

Graphene-based supercapacitor with carbon nanotube film as highly efficient current collector

International Nuclear Information System (INIS)

Notarianni, Marco; Liu, Jinzhang; Motta, Nunzio; Mirri, Francesca; Pasquali, Matteo

2014-01-01

Flexible graphene-based thin film supercapacitors were made using carbon nanotube (CNT) films as current collectors and graphene films as electrodes. The graphene sheets were produced by simple electrochemical exfoliation, while the graphene films with controlled thickness were prepared by vacuum filtration. The solid-state supercapacitor was made by using two graphene/CNT films on plastic substrates to sandwich a thin layer of gelled electrolyte. We found that the thin graphene film with thickness <1 μm can greatly increase the capacitance. Using only CNT films as electrodes, the device exhibited a capacitance as low as ∼0.4 mF cm −2 , whereas by adding a 360 nm thick graphene film to the CNT electrodes led to a ∼4.3 mF cm −2 capacitance. We experimentally demonstrated that the conductive CNT film is equivalent to gold as a current collector while it provides a stronger binding force to the graphene film. Combining the high capacitance of the thin graphene film and the high conductivity of the CNT film, our devices exhibited high energy density (8–14 Wh kg −1 ) and power density (250–450 kW kg −1 ). (paper)

A Robust Highly Aligned DNA Nanowire Array-Enabled Lithography for Graphene Nanoribbon Transistors.

Science.gov (United States)

Kang, Seok Hee; Hwang, Wan Sik; Lin, Zhiqun; Kwon, Se Hun; Hong, Suck Won

2015-12-09

Because of its excellent charge carrier mobility at the Dirac point, graphene possesses exceptional properties for high-performance devices. Of particular interest is the potential use of graphene nanoribbons or graphene nanomesh for field-effect transistors. Herein, highly aligned DNA nanowire arrays were crafted by flow-assisted self-assembly of a drop of DNA aqueous solution on a flat polymer substrate. Subsequently, they were exploited as "ink" and transfer-printed on chemical vapor deposited (CVD)-grown graphene substrate. The oriented DNA nanowires served as the lithographic resist for selective removal of graphene, forming highly aligned graphene nanoribbons. Intriguingly, these graphene nanoribbons can be readily produced over a large area (i.e., millimeter scale) with a high degree of feature-size controllability and a low level of defects, rendering the fabrication of flexible two terminal devices and field-effect transistors.

Purine Nucleoside Phosphorylase (PNP) Activity of Lymphocytes and T Cell Subsets in Peripheral Blood in Thyroid Tumors

International Nuclear Information System (INIS)

Kim, Dong Soo

1992-01-01

To elucidate alteration of purine nucleoside phosphorylase (PNP) activity of peripheral lymphocytes and helper/inducer and suppressor/cytototxic T cells in patients with thyroid tumors, the author examined PNP activity, and CD4 + and CD8 + cells of peripheral blood in 20 cases of simple goiter, 9 cases of thyroid adenoma and 20 cases of thyroid cancer as well as 11 cases of adult healthy subjects as control. Diagnoses were established on the basis of commonly accepted clinical and biochemical criteria in simple goiter and were confirmed histopathologically in thyroid adenoma and cancer. All blood was obtained from veins of the patients and control subjects in Pusan National University Hospital during the period of January to August, 1991. The results obtained were summarized as follows: 1) The PNP activity was significantly decreased or tended to be decreased in thyroid adenomas and cancers as compared with control subjects and simple goiters. 2) The percentage of CD8 cells was significantly decreased or tended to be decreased in thyroid cancers as compared with simple goiters, thyroid adenomas and control subjects. 3) The CD4/CD8 ratio was significantly increased or tended to be increased in thyroid cancer as compared with simple goiters, thyroid adenomas and control subjects. On the basis of the results, it can be suggested that the immunodysfunction in thyroid cancer may be due to decreased suppressor/cytotoxic T cells, and the estimation of PNP activity of peripheral lymphocyte is a helpful test in detecting the immune status in thyroid tumors.

Fabrication of highly dispersed ZnO nanoparticles embedded in graphene nanosheets for high performance supercapacitors

International Nuclear Information System (INIS)

Fang, Linxia; Zhang, Baoliang; Li, Wei; Zhang, Jizhong; Huang, Kejing; Zhang, Qiuyu

2014-01-01

We report a facile strategy to synthesize ZnO-graphene nanocomposites as an advanced electrode material for high-performance supercapacitors. The ZnO-graphene nanocomposites have been fabricated via a facile, low-temperature in situ wet chemistry process. During this process, high dispersed ZnO nanoparticles are embedded in graphene nanosheets, leading to sandwich-structured ZnO-graphene nanocomposites. Thus, intimate interfacial contact between ZnO nanoparticles and graphene nanosheets are achieved, which facilitates electrochemical activity and enhance electrochemical properties due to fast electron transfer. The as-prepared ZnO-graphene nanocomposites exhibit a maximum specific capacitance of 786 F g −1 and excellent cycle life with capacity retention of about 92% after 500 cycles. This facile design and rational synthesis offers an effective strategy to enhance the electrochemical performance of supercapacitors and shows promising potential for large-scale application in energy storage

A graphene integrated highly transparent resistive switching memory device

Science.gov (United States)

Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

2018-05-01

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

Robust microscale superlubricity under high contact pressure enabled by graphene-coated microsphere

Science.gov (United States)

Liu, Shu-Wei; Wang, Hua-Ping; Xu, Qiang; Ma, Tian-Bao; Yu, Gui; Zhang, Chenhui; Geng, Dechao; Yu, Zhiwei; Zhang, Shengguang; Wang, Wenzhong; Hu, Yuan-Zhong; Wang, Hui; Luo, Jianbin

2017-02-01

Superlubricity of graphite and graphene has aroused increasing interest in recent years. Yet how to obtain a long-lasting superlubricity between graphene layers, under high applied normal load in ambient atmosphere still remains a challenge but is highly desirable. Here, we report a direct measurement of sliding friction between graphene and graphene, and graphene and hexagonal boron nitride (h-BN) under high contact pressures by employing graphene-coated microsphere (GMS) probe prepared by metal-catalyst-free chemical vapour deposition. The exceptionally low and robust friction coefficient of 0.003 is accomplished under local asperity contact pressure up to 1 GPa, at arbitrary relative surface rotation angles, which is insensitive to relative humidity up to 51% RH. This ultralow friction is attributed to the sustainable overall incommensurability due to the multi-asperity contact covered with randomly oriented graphene nanograins. This realization of microscale superlubricity can be extended to the sliding between a variety of two-dimensional (2D) layers.

Interlayer catalytic exfoliation realizing scalable production of large-size pristine few-layer graphene

Science.gov (United States)

Geng, Xiumei; Guo, Yufen; Li, Dongfang; Li, Weiwei; Zhu, Chao; Wei, Xiangfei; Chen, Mingliang; Gao, Song; Qiu, Shengqiang; Gong, Youpin; Wu, Liqiong; Long, Mingsheng; Sun, Mengtao; Pan, Gebo; Liu, Liwei

2013-01-01

Mass production of reduced graphene oxide and graphene nanoplatelets has recently been achieved. However, a great challenge still remains in realizing large-quantity and high-quality production of large-size thin few-layer graphene (FLG). Here, we create a novel route to solve the issue by employing one-time-only interlayer catalytic exfoliation (ICE) of salt-intercalated graphite. The typical FLG with a large lateral size of tens of microns and a thickness less than 2 nm have been obtained by a mild and durative ICE. The high-quality graphene layers preserve intact basal crystal planes owing to avoidance of the degradation reaction during both intercalation and ICE. Furthermore, we reveal that the high-quality FLG ensures a remarkable lithium-storage stability (>1,000 cycles) and a large reversible specific capacity (>600 mAh g-1). This simple and scalable technique acquiring high-quality FLG offers considerable potential for future realistic applications.

Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum.

Science.gov (United States)

Gao, Libo; Ren, Wencai; Xu, Huilong; Jin, Li; Wang, Zhenxing; Ma, Teng; Ma, Lai-Peng; Zhang, Zhiyong; Fu, Qiang; Peng, Lian-Mao; Bao, Xinhe; Cheng, Hui-Ming

2012-02-28

Large single-crystal graphene is highly desired and important for the applications of graphene in electronics, as grain boundaries between graphene grains markedly degrade its quality and properties. Here we report the growth of millimetre-sized hexagonal single-crystal graphene and graphene films joined from such grains on Pt by ambient-pressure chemical vapour deposition. We report a bubbling method to transfer these single graphene grains and graphene films to arbitrary substrate, which is nondestructive not only to graphene, but also to the Pt substrates. The Pt substrates can be repeatedly used for graphene growth. The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm(2) V(-1) s(-1) under ambient conditions. The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.

Reduced graphene oxide synthesis by high energy ball milling

Energy Technology Data Exchange (ETDEWEB)

Mondal, O. [Department of Physics, M.U.C Women' s College, Burdwan 713104 (India); Mitra, S. [MLS Prof' s Unit, Indian Association for the Cultivation of Science, Kolkata 700032 (India); Pal, M. [CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Datta, A. [University School of Basic and Applied Science (USBAS), Guru Gobind Singh Indraprastha University, New Delhi 110075 (India); Dhara, S. [Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Chakravorty, D., E-mail: mlsdc@iacs.res.in [MLS Prof' s Unit, Indian Association for the Cultivation of Science, Kolkata 700032 (India)

2015-07-01

Graphene oxide is transformed to reduced graphene oxide by high energy ball milling in inert atmosphere. The process of ball milling introduces defects and removes oxygen functional groups, thereby creating the possibility of fine tuning the band gap of all intermediate stages of the structural evolution. A limit of the backbone sp{sup 2} network structure has been found which should be able to accommodate defects, before amorphization sets in. The amorphization of graphene oxide is achieved rather quickly in comparison to that of graphite. From thermogravimetric and differential scanning calorimetric analysis along with Fourier transform infrared (FTIR) and Raman spectroscopic studies, it is found that the number of oxygen-containing groups decreases at a faster rate than that of aromatic double bonds with increasing ball milling time with a maximum limit of 3 h. Several characterization techniques (FTIR, Raman, UV–Visible and X-ray photoelectron spectroscopy) have confirmed that the material synthesized is, indeed, reduced graphene oxide. - Highlights: • Graphene oxide is transformed to reduced graphene oxide by high energy ball milling in inert atmosphere. • Fine tuning the band gap by introducing defects and removing oxygen functional groups. • Introduction of excess defects leads to amorphization. • Photoluminescence has been observed in the UV-blue region.

A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

NARCIS (Netherlands)

Zomer, P. J.; Dash, S. P.; Tombros, N.; van Wees, B. J.

2011-01-01

We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early

New synthesis method for the growth of epitaxial graphene

Energy Technology Data Exchange (ETDEWEB)

Yu, X.Z. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China); Hwang, C.G.; Jozwiak, C.M.; Koehl, A. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Schmid, A.K. [National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94709 (United States); Lanzara, A., E-mail: ALanzara@lbl.gov [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States)

2011-04-15

Highlights: {yields} We report a new straightforward method for the synthesis of micrometer scale graphene sheets. {yields} The process is based on a face to face mehtod in which two SiC substrates are placed one on top of the other and are heated simultaneously, leading to highly homogeneous samples. {yields} The number of graphene layers is determined by the annealing temperature. - Abstract: As a viable candidate for an all-carbon post-CMOS electronics revolution, epitaxial graphene has attracted significant attention. To realize its application potential, reliable methods for fabricating large-area single-crystalline graphene domains are required. A new way to synthesize high quality epitaxial graphene, namely 'face-to-face' method, has been reported in this paper. The structure and morphologies of the samples are characterized by low-energy electron diffraction, atomic force microscopy, angle-resolved photoemission spectroscopy and Raman spectroscopy. The grown samples show better quality and larger length scales than samples grown through conventional thermal desorption. Moreover, the graphene thickness can be easily controlled by changing annealing temperature.

High-Resolution Graphene Films for Electrochemical Sensing via Inkjet Maskless Lithography.

Science.gov (United States)

Hondred, John A; Stromberg, Loreen R; Mosher, Curtis L; Claussen, Jonathan C

2017-10-24

Solution-phase printing of nanomaterial-based graphene inks are rapidly gaining interest for fabrication of flexible electronics. However, scalable manufacturing techniques for high-resolution printed graphene circuits are still lacking. Here, we report a patterning technique [i.e., inkjet maskless lithography (IML)] to form high-resolution, flexible, graphene films (line widths down to 20 μm) that significantly exceed the current inkjet printing resolution of graphene (line widths ∼60 μm). IML uses an inkjet printed polymer lacquer as a sacrificial pattern, viscous spin-coated graphene, and a subsequent graphene lift-off to pattern films without the need for prefabricated stencils, templates, or cleanroom technology (e.g., photolithography). Laser annealing is employed to increase conductivity on thermally sensitive, flexible substrates [polyethylene terephthalate (PET)]. Laser annealing and subsequent platinum nanoparticle deposition substantially increases the electroactive nature of graphene as illustrated by electrochemical hydrogen peroxide (H 2 O 2 ) sensing [rapid response (5 s), broad linear sensing range (0.1-550 μm), high sensitivity (0.21 μM/μA), and low detection limit (0.21 μM)]. Moreover, high-resolution, complex graphene circuits [i.e., interdigitated electrodes (IDE) with varying finger width and spacing] were created with IML and characterized via potassium chloride (KCl) electrochemical impedance spectroscopy (EIS). Results indicated that sensitivity directly correlates to electrode feature size as the IDE with the smallest finger width and spacing (50 and 50 μm) displayed the largest response to changes in KCl concentration (∼21 kΩ). These results indicate that the developed IML patterning technique is well-suited for rapid, solution-phase graphene film prototyping on flexible substrates for numerous applications including electrochemical sensing.

Fabrication of highly ordered polyaniline nanocone on pristine graphene for high-performance supercapacitor electrodes

Science.gov (United States)

Song, Ningning; Wang, Wucong; Wu, Yue; Xiao, Ding; Zhao, Yaping

2018-04-01

The hybrids of pristine graphene with polyaniline were synthesized by in situ polymerizations for making a high-performance supercapacitor. The formed high-ordered PANI nanocones were vertically aligned on the graphene sheets. The length of the PANI nanocones increased with the concentration of aniline monomer. The specific capacitance of the hybrids electrode in the three-electrode system was measured as high as 481 F/g at a current density of 0.1 A/g, and its stability remained 87% after constant charge-discharge 10000 cycles at a current density of 1 A/g. This outstanding performance is attributed to the coupling effects of the pristine graphene and the hierarchical structure of the PANI possessing high specific surface area. The unique structure of the PANI provided more charge transmission pathways and fast charge-transfer speed of electrons to the pristine graphene because of its large specific area exposed to the electrolyte. The hybrid is expected to have potential applications in supercapacitor electrodes.

Graphene quantum dots-three-dimensional graphene composites for high-performance supercapacitors.

Science.gov (United States)

Chen, Qing; Hu, Yue; Hu, Chuangang; Cheng, Huhu; Zhang, Zhipan; Shao, Huibo; Qu, Liangti

2014-09-28

Graphene quantum dots (GQDs) have been successfully deposited onto the three-dimensional graphene (3DG) by a benign electrochemical method and the ordered 3DG structure remains intact after the uniform deposition of GQDs. In addition, the capacitive properties of the as-formed GQD-3DG composites are evaluated in symmetrical supercapacitors. It is found that the supercapacitor fabricated from the GQD-3DG composite is highly stable and exhibits a high specific capacitance of 268 F g(-1), representing a more than 90% improvement over that of the supercapacitor made from pure 3DG electrodes (136 F g(-1)). Owing to the convenience of the current method, it can be further used in other well-defined electrode materials, such as carbon nanotubes, carbon aerogels and conjugated polymers to improve the performance of the supercapacitors.

Crumpled Nitrogen-Doped Graphene for Supercapacitors with High Gravimetric and Volumetric Performances.

Science.gov (United States)

Wang, Jie; Ding, Bing; Xu, Yunling; Shen, Laifa; Dou, Hui; Zhang, Xiaogang

2015-10-14

Graphene is considered a promising electrochemical capacitors electrode material due to its high surface area and high electrical conductivity. However, restacking interactions between graphene nanosheets significantly decrease the ion-accessible surface area and impede electronic and ionic transfer. This would, in turn, severely hinder the realization of high energy density. Herein, we report a strategy for preparation of few-layer graphene material with abundant crumples and high-level nitrogen doping. The two-dimensional graphene nanosheets (CNG) feature high ion-available surface area, excellent electronic and ion transfer properties, and high packing density, permitting the CNG electrode to exhibit excellent electrochemical performance. In ionic liquid electrolyte, the CNG electrode exhibits gravimetric and volumetric capacitances of 128 F g(-1) and 98 F cm(-3), respectively, achieving gravimetric and volumetric energy densities of 56 Wh kg(-1) and 43 Wh L(-1). The preparation strategy described here provides a new approach for developing a graphene-based supercapacitor with high gravimetric and volumetric energy densities.

Hybrid graphene electrodes for supercapacitors of high energy density

Science.gov (United States)

Zhang, Feifei; Tang, Jie; Shinya, Norio; Qin, Lu-Chang

2013-10-01

We describe a process of co-reduction to reduce dispersed graphene oxide (GO) and single-walled carbon nanotubes (SWNTs) simultaneously for preparation of hybrid electrodes for graphene supercapacitors. The SWNTs are in between the inter-layer space of graphene sheets as a spacer to prevent effectively restacking of graphene that often limits seriously the electrochemical performance of graphene supercapacitors. The SWNTs also act as conductive binders to improve the electrical conduction of the electrode. A high specific capacitance of 261 F g-1 for a single electrode and specific energy density of 123 W h kg-1 measured in the two-electrode configuration have been obtained in ionic liquid (EMI-TFSI). For interpretation of color in Fig. 6, the reader is referred to the web version of this article.

Graphene as tunable contact for high performance thin film transistor

Science.gov (United States)

Liu, Yuan

Graphene has been one of the most extensively studied materials due to its unique band structure, the linear dispersion at the K point. It gives rise to novel phenomena, such as the anomalous quantum Hall effect, and has opened up a new category of "Fermi-Dirac" physics. Graphene has also attracted enormous attention for future electronics because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. However, graphene has zero intrinsic band gap, thus can not be used as the active channel material for logic transistors with sufficient on/off current ratio. Previous approaches to address this challenge include the induction of a transport gap in graphene nanostructures or bilayer graphene. However, these approaches have proved successful in improving the on-- off ratio of the resulting devices, but often at a severe sacrifice of the deliverable current density. Alternatively, with a finite density of states, tunable work-function and optical transparency, graphene can function as a unique tunable contact material to create a new structure of electronic devices. In this thesis, I will present my effort toward on-off ratio of graphene based vertical thin film transistor. I will include the work form four of my first author publication. I will first present my research studies on the a dramatic enhancement of the overall quantum efficiency and spectral selectivity of graphene photodetector, by coupling with plasmonic nanostructures. It is observed that metallic plasmonic nanostructures can be integrated with graphene photodetectors to greatly enhance the photocurrent and external quantum efficiency by up to 1,500%. Plasmonic nanostructures of variable resonance frequencies selectively amplify the photoresponse of graphene to light of different wavelengths, enabling highly specific detection of multicolours. Then I will show a new design of highly flexible vertical TFTs (VTFTs) with superior electrical

Growth of wrinkle-free graphene on texture-controlled platinum films and thermal-assisted transfer of large-scale patterned graphene.

Science.gov (United States)

Choi, Jae-Kyung; Kwak, Jinsung; Park, Soon-Dong; Yun, Hyung Duk; Kim, Se-Yang; Jung, Minbok; Kim, Sung Youb; Park, Kibog; Kang, Seoktae; Kim, Sung-Dae; Park, Dong-Yeon; Lee, Dong-Su; Hong, Suk-Kyoung; Shin, Hyung-Joon; Kwon, Soon-Yong

2015-01-27

Growth of large-scale patterned, wrinkle-free graphene and the gentle transfer technique without further damage are most important requirements for the practical use of graphene. Here we report the growth of wrinkle-free, strictly uniform monolayer graphene films by chemical vapor deposition on a platinum (Pt) substrate with texture-controlled giant grains and the thermal-assisted transfer of large-scale patterned graphene onto arbitrary substrates. The designed Pt surfaces with limited numbers of grain boundaries and improved surface perfectness as well as small thermal expansion coefficient difference to graphene provide a venue for uniform growth of monolayer graphene with wrinkle-free characteristic. The thermal-assisted transfer technique allows the complete transfer of large-scale patterned graphene films onto arbitrary substrates without any ripples, tears, or folds. The transferred graphene shows high crystalline quality with an average carrier mobility of ∼ 5500 cm(2) V(-1) s(-1) at room temperature. Furthermore, this transfer technique shows a high tolerance to variations in types and morphologies of underlying substrates.

Flexible Graphene Electrodes for Prolonged Dynamic ECG Monitoring

Directory of Open Access Journals (Sweden)

Cunguang Lou

2016-11-01

Full Text Available This paper describes the development of a graphene-based dry flexible electrocardiography (ECG electrode and a portable wireless ECG measurement system. First, graphene films on polyethylene terephthalate (PET substrates and graphene paper were used to construct the ECG electrode. Then, a graphene textile was synthesized for the fabrication of a wearable ECG monitoring system. The structure and the electrical properties of the graphene electrodes were evaluated using Raman spectroscopy, scanning electron microscopy (SEM, and alternating current impedance spectroscopy. ECG signals were then collected from healthy subjects using the developed graphene electrode and portable measurement system. The results show that the graphene electrode was able to acquire the typical characteristics and features of human ECG signals with a high signal-to-noise (SNR ratio in different states of motion. A week-long continuous wearability test showed no degradation in the ECG signal quality over time. The graphene-based flexible electrode demonstrates comfortability, good biocompatibility, and high electrophysiological detection sensitivity. The graphene electrode also combines the potential for use in long-term wearable dynamic cardiac activity monitoring systems with convenience and comfort for use in home health care of elderly and high-risk adults.

High performance MoS2 TFT using graphene contact first process

Directory of Open Access Journals (Sweden)

Chih-Shiang Chang Chien

2017-08-01

Full Text Available An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS. Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vggraphene changes into p-type, so graphene contact can achieve lower off current by lowering the Fermi level. To further improve the performance of MoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec.

The CVD graphene transfer procedure introduces metallic impurities which alter the graphene electrochemical properties.

Science.gov (United States)

Ambrosi, Adriano; Pumera, Martin

2014-01-07

High quality graphene films can be fabricated by chemical vapor deposition (CVD) using Ni and Cu as catalytic substrates. Such a synthesis procedure always requires a subsequent transfer process to be performed in order to eliminate the metallic substrate and transfer the graphene onto the desired surface. We show here that such a transfer process causes significant contamination of the graphene film with residual Fe and Ni metal impurities. Fe contamination derives from the use of Fe-based etching solutions to dissolve Ni (or Cu) substrates, while residual Ni (or Cu) is due to an incomplete metal substrate etching. The presence of these metallic impurities within the transferred graphene film affects tremendously its electrochemical behavior when adopted as an electrode material.

Facile synthesis of graphene on dielectric surfaces using a two-temperature reactor CVD system

International Nuclear Information System (INIS)

Zhang, C; Man, B Y; Yang, C; Jiang, S Z; Liu, M; Chen, C S; Xu, S C; Sun, Z C; Gao, X G; Chen, X J

2013-01-01

Direct deposition of graphene on a dielectric substrate is demonstrated using a chemical vapor deposition system with a two-temperature reactor. The two-temperature reactor is utilized to offer sufficient, well-proportioned floating Cu atoms and to provide a temperature gradient for facile synthesis of graphene on dielectric surfaces. The evaporated Cu atoms catalyze the reaction in the presented method. C atoms and Cu atoms respectively act as the nuclei for forming graphene film in the low-temperature zone and the zones close to the high-temperature zones. A uniform and high-quality graphene film is formed in an atmosphere of sufficient and well-proportioned floating Cu atoms. Raman spectroscopy, scanning electron microscopy and atomic force microscopy confirm the presence of uniform and high-quality graphene. (paper)

Performance-Enhanced Activated Carbon Electrodes for Supercapacitors Combining Both Graphene-Modified Current Collectors and Graphene Conductive Additive

Science.gov (United States)

Wang, Rubing; Qian, Yuting; Li, Weiwei; Zhu, Shoupu; Liu, Fengkui; Guo, Yufen; Chen, Mingliang; Li, Qi; Liu, Liwei

2018-01-01

Graphene has been widely used in the active material, conductive agent, binder or current collector for supercapacitors, due to its large specific surface area, high conductivity, and electron mobility. However, works simultaneously employing graphene as conductive agent and current collector were rarely reported. Here, we report improved activated carbon (AC) electrodes (AC@G@NiF/G) simultaneously combining chemical vapor deposition (CVD) graphene-modified nickel foams (NiF/Gs) current collectors and high quality few-layer graphene conductive additive instead of carbon black (CB). The synergistic effect of NiF/Gs and graphene additive makes the performances of AC@G@NiF/G electrodes superior to those of electrodes with CB or with nickel foam current collectors. The performances of AC@G@NiF/G electrodes show that for the few-layer graphene addition exists an optimum value around 5 wt %, rather than a larger addition of graphene, works out better. A symmetric supercapacitor assembled by AC@G@NiF/G electrodes exhibits excellent cycling stability. We attribute improved performances to graphene-enhanced conductivity of electrode materials and NiF/Gs with 3D graphene conductive network and lower oxidation, largely improving the electrical contact between active materials and current collectors. PMID:29762528

Performance-Enhanced Activated Carbon Electrodes for Supercapacitors Combining Both Graphene-Modified Current Collectors and Graphene Conductive Additive.

Science.gov (United States)

Wang, Rubing; Qian, Yuting; Li, Weiwei; Zhu, Shoupu; Liu, Fengkui; Guo, Yufen; Chen, Mingliang; Li, Qi; Liu, Liwei

2018-05-15

Graphene has been widely used in the active material, conductive agent, binder or current collector for supercapacitors, due to its large specific surface area, high conductivity, and electron mobility. However, works simultaneously employing graphene as conductive agent and current collector were rarely reported. Here, we report improved activated carbon (AC) electrodes (AC@G@NiF/G) simultaneously combining chemical vapor deposition (CVD) graphene-modified nickel foams (NiF/Gs) current collectors and high quality few-layer graphene conductive additive instead of carbon black (CB). The synergistic effect of NiF/Gs and graphene additive makes the performances of AC@G@NiF/G electrodes superior to those of electrodes with CB or with nickel foam current collectors. The performances of AC@G@NiF/G electrodes show that for the few-layer graphene addition exists an optimum value around 5 wt %, rather than a larger addition of graphene, works out better. A symmetric supercapacitor assembled by AC@G@NiF/G electrodes exhibits excellent cycling stability. We attribute improved performances to graphene-enhanced conductivity of electrode materials and NiF/Gs with 3D graphene conductive network and lower oxidation, largely improving the electrical contact between active materials and current collectors.

Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

Science.gov (United States)

Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A.; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

2016-03-01

Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

High Photocatalytic Performance of Two Types of Graphene Modified TiO2 Composite Photocatalysts

Science.gov (United States)

Zhang, Jun; Li, Sen; Tang, Bo; Wang, Zhengwei; Ji, Guojian; Huang, Weiqiu; Wang, Jinping

2017-07-01

High quality and naturally continuous structure of three-dimensional graphene network (3DGN) endow it a promising candidate to modify TiO2. Although the resulting composite photocatalysts display outstanding performances, the lacking of active sites of the 3DGN not only goes against a close contact between the graphene basal plane and TiO2 nanoparticles (weaken electron transport ability) but also limits the efficient adsorption of pollutant molecules. Similar with surface functional groups of the reduced graphene oxide (RGO) nanosheets, surface defects of the 3DGN can act as the adsorption sites. However, the defect density of the 3DGN is difficult to control (a strict cool rate of substrate and a strict flow of precursor gas are necessary) because of its growth approach (chemical vapor deposition method). In this study, to give full play to the functions of graphene, the RGO nanosheets and 3DGN co-modified TiO2 composite photocatalysts are prepared. After optimizing the mass fraction of the RGO nanosheets in the composite photocatalyst, the resulting chemical adsorption ability and yields of strong oxidizing free radicals increase significantly, indicating the synergy of the RGO nanosheets and 3DGN.

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

Science.gov (United States)

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Preparation of water-soluble graphene nanoplatelets and highly conductive films

KAUST Repository

Xu, Xuezhu

2017-08-11

This paper tackles the challenge of preparation stable, highly concentrated aqueous graphene dispersions. Despite tremendous recent interest, there has been limited success in developing a method that ensures the total dispersion of non-oxidized, defect-free graphene nanosheets in water. This study successfully demonstrates that few-layer graphene nanoplatelets (GNPs) can form highly concentrated aqueous colloidal solutions after they have been pretreated in a low-concentration inorganic sodium-hypochlorite and sodium-bromide salted aqueous solvent. This method retains the graphitic structure as evidenced by nuclear magnetic resonance spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. Vacuum-filtrated freestanding films demonstrate an electrical conductivity as high as 3000 S m−1. This dispersion technique is believed to be applicable not only for GNPs, but also for dispersing other types of graphitic materials, including fullerenes, single/double/multi-walled carbon nanotubes, graphene nanoribbons and etc.

Long-Term Stability of Photovoltaic Hybrid Perovskites achieved by Graphene Passivation via a Water- and Polymer-Free Graphene Transfer Method

Science.gov (United States)

Tseng, W.-S.; Jao, M.-H.; Hsu, C.-C.; Wu, C.-I.; Yeh, N.-C.

Organic-inorganic hybrid perovskites such as CH3NH3PbX3 (X = I, Br) have been intensively studied in recent years because of their rapidly improving photovoltaic power conversion efficiency. However, severe instability of these materials in ambient environment has been a primary challenge for practical applications. To address this issue, we employ high-quality PECVD-grown graphene to passivate the hybrid perovskites. In contrast to existing processes for transferring graphene from the growth substrates to other surfaces that involve either polymer or water, which are incompatible with photovoltaic applications of these water-sensitive hybrid perovskites, we report here a new water- and polymer-free graphene transferring method. Studies of the Raman, x-ray and ultraviolet photoemission spectroscopy (XPS and UPS) demonstrated excellent quality of monolayer PECVD-grown graphene samples after their transfer onto different substrates with the water- and polymer-free processing method. In particular, graphene was successfully transferred onto the surface of CH3NH3PbI3 thin films with sample quality intact. Moreover, XPS and UPS studies indicated that even after 3 months, the fully graphene-covered perovskite films remained spectroscopically invariant, which was in sharp contrast to the drastic changes, after merely one week, in both the XPS and UPS of a control CH3NH3PbI3 sample without graphene protection. Beckman Inst. in Caltech. Dragon Gate Program in Taiwan.

Facet-dependent study of efficient growth of graphene on copper

Indian Academy of Sciences (India)

The growth of graphene by chemical vapour deposition (CVD) on copper is the most promising scalable method for high-quality graphene. The use of ethanol, an economic and safe precursor, for the fast growth of graphene on copper by a home-built CVD set-up was analysed. Full coverage of uniform single-layer ...

Quality assessment of graphene: Continuity, uniformity,and accuracy of mobility measurements

Institute of Scientific and Technical Information of China (English)

David M.A.Mackenzie; Timothy J.Booth; Lene Gammelgaard; Johanna Zultak; Bjarke S.Jessen; Peter Bφggild; Dirch H.Petersen; Jonas D.Buron; Patrick R.Whelan; José M.Caridad; Martin Bjergfelt; Birong Luo; Abhay Shivayogimath; Anne L.Smitshuysen; Joachim D.Thomsen

2017-01-01

With the increasing availability of large-area graphene,the ability to rapidly and accurately assess the quality of the electrical properties has become critically important.For practical applications,spatial variability in carrier density and carrier mobility must be controlled and minimized.We present a simple framework for assessing the quality and homogeneity of large-area graphene devices.The field effect in both exfoliated graphene devices encapsulated in hexagonal boron nitride and chemical vapor-deposited (CVD) devices was measured in dual current-voltage configurations and used to derive a single,gate-dependent effective shape factor,β,for each device.β is a sensitive indicator of spatial homogeneity that can be obtained from samples of arbitrary shape.All 50 devices investigated in this study show a variation (up to tenfold) inβ as a function of the gate bias.Finite element simulations suggest that spatial doping inhomogeneity,rather than mobility inhomogeneity,is the primary cause of the gate dependence ofβ,and that measurable variations ofβ can be caused by doping variations as small as 1010 cm-2.Our results suggest that local variations in the position of the Dirac point alter the current flow and thus the effective sample shape as a function of the gate bias.We also found that such variations lead to systematic errors in carrier mobility calculations,which can be revealed by inspecting the correspondingβ factor.

Chemical Vapour Deposition of Large Area Graphene

DEFF Research Database (Denmark)

Larsen, Martin Benjamin Barbour Spanget

Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform......, single layer, and high carrier mobility large area graphene. The main goals of this work are; (1) explore the graphene growth mechanics in a low pressure cold-wall CVD system on a copper substrate, and (2) optimize the process of growing high quality graphene in terms of carrier mobility, and crystal...... structure. Optimization of a process for graphene growth on commercially available copper foil is limited by the number of aluminium oxide particles on the surface of the catalyst. By replacing the copper foil with a thin deposited copper film on a SiO2/Si or c-plane sapphire wafer the particles can...

Technique of forecasting the working capacity of horizontal p-n-p transistor for a given radiation level; Metodika prognozirovaniya rabotosposobnosti gorizontal`nogo p-n-p tranzistora na zadannyj uroven` izlucheniya

Energy Technology Data Exchange (ETDEWEB)

Pershenkov, V S; Sevast` yanov, A V

1994-12-31

Methods of forecasting the degradation of horizontal p-n-p transistors under the effect of ionizing radiation based on the principles of invariant topological approach are presented. Results are presented and analysis of experimental investigations into the real test structures performed in the same process cycle as the integral circuit under development is given.

Transfer-free synthesis of doped and patterned graphene films.

Science.gov (United States)

Zhuo, Qi-Qi; Wang, Qi; Zhang, Yi-Ping; Zhang, Duo; Li, Qin-Liang; Gao, Chun-Hong; Sun, Yan-Qiu; Ding, Lei; Sun, Qi-Jun; Wang, Sui-Dong; Zhong, Jun; Sun, Xu-Hui; Lee, Shuit-Tong

2015-01-27

High-quality and wafer-scale graphene on insulating gate dielectrics is a prerequisite for graphene electronic applications. For such applications, graphene is typically synthesized and then transferred to a desirable substrate for subsequent device processing. Direct production of graphene on substrates without transfer is highly desirable for simplified device processing. However, graphene synthesis directly on substrates suitable for device applications, though highly demanded, remains unattainable and challenging. Here, we report a simple, transfer-free method capable of synthesizing graphene directly on dielectric substrates at temperatures as low as 600 °C using polycyclic aromatic hydrocarbons as the carbon source. Significantly, N-doping and patterning of graphene can be readily and concurrently achieved by this growth method. Remarkably, the graphene films directly grown on glass attained a small sheet resistance of 550 Ω/sq and a high transmittance of 91.2%. Organic light-emitting diodes (OLEDs) fabricated on N-doped graphene on glass achieved a current density of 4.0 mA/cm(2) at 8 V compared to 2.6 mA/cm(2) for OLEDs similarly fabricated on indium tin oxide (ITO)-coated glass, demonstrating that the graphene thus prepared may have potential to serve as a transparent electrode to replace ITO.

Morphology Effect of Vertical Graphene on the High Performance of Supercapacitor Electrode.

Science.gov (United States)

Zhang, Yu; Zou, Qionghui; Hsu, Hua Shao; Raina, Supil; Xu, Yuxi; Kang, Joyce B; Chen, Jun; Deng, Shaozhi; Xu, Ningsheng; Kang, Weng P

2016-03-23

Graphene and its composites are widely investigated as supercapacitor electrodes due to their large specific surface area. However, the severe aggregation and disordered alignment of graphene sheets hamper the maximum utilization of its surface area. Here we report an optimized structure for supercapacitor electrode, i.e., the vertical graphene sheets, which have a vertical structure and open architecture for ion transport pathway. The effect of morphology and orientation of vertical graphene on the performance of supercapacitor is examined using a combination of model calculation and experimental study. Both results consistently demonstrate that the vertical graphene electrode has a much superior performance than that of lateral graphene electrode. Typically, the areal capacitances of a vertical graphene electrode reach 8.4 mF/cm(2) at scan rate of 100 mV/s; this is about 38% higher than that of a lateral graphene electrode and about 6 times higher than that of graphite paper. To further improve its performance, a MnO2 nanoflake layer is coated on the surface of graphene to provide a high pseudocapacitive contribution to the overall areal capacitance which increases to 500 mF/cm(2) at scan rate of 5 mV/s. The reasons for these significant improvements are studied in detail and are attributed to the fast ion diffusion and enhanced charge storage capacity. The microscopic manipulation of graphene electrode configuration could greatly improve its specific capacitance, and furthermore, boost the energy density of supercapacitor. Our results demonstrate that the vertical graphene electrode is more efficient and practical for the high performance energy storage device with high power and energy densities.

Actinide-pnictide (An-Pn) bonds spanning non-metal, metalloid, and metal combinations (An=U, Th; Pn=P, As, Sb, Bi)

Energy Technology Data Exchange (ETDEWEB)

Rookes, Thomas M.; Wildman, Elizabeth P.; Gardner, Benedict M.; Wooles, Ashley J.; Gregson, Matthew; Tuna, Floriana; Liddle, Stephen T. [School of Chemistry, The University of Manchester (United Kingdom); Balazs, Gabor; Scheer, Manfred [Institute of Inorganic Chemistry, University of Regensburg (Germany)

2018-01-26

The synthesis and characterisation is presented of the compounds [An(Tren{sup DMBS}){Pn(SiMe_3)_2}] and [An(Tren{sup TIPS}){Pn(SiMe_3)_2}] [Tren{sup DMBS}=N(CH{sub 2}CH{sub 2}NSiMe{sub 2}Bu{sup t}){sub 3}, An=U, Pn=P, As, Sb, Bi; An=Th, Pn=P, As; Tren{sup TIPS}=N(CH{sub 2}CH{sub 2}NSiPr{sup i}{sub 3}){sub 3}, An=U, Pn=P, As, Sb; An=Th, Pn=P, As, Sb]. The U-Sb and Th-Sb moieties are unprecedented examples of any kind of An-Sb molecular bond, and the U-Bi bond is the first two-centre-two-electron (2c-2e) one. The Th-Bi combination was too unstable to isolate, underscoring the fragility of these linkages. However, the U-Bi complex is the heaviest 2c-2e pairing of two elements involving an actinide on a macroscopic scale under ambient conditions, and this is exceeded only by An-An pairings prepared under cryogenic matrix isolation conditions. Thermolysis and photolysis experiments suggest that the U-Pn bonds degrade by homolytic bond cleavage, whereas the more redox-robust thorium compounds engage in an acid-base/dehydrocoupling route. (copyright 2018 The Authors. Published by Wiley-VCH Verlag GmbH and Co. KGaA.)

Irradiation of graphene field effect transistors with highly charged ions

Energy Technology Data Exchange (ETDEWEB)

Ernst, P.; Kozubek, R.; Madauß, L.; Sonntag, J.; Lorke, A.; Schleberger, M., E-mail: marika.schleberger@uni-due.de

2016-09-01

In this work, graphene field-effect transistors are used to detect defects due to irradiation with slow, highly charged ions. In order to avoid contamination effects, a dedicated ultra-high vacuum set up has been designed and installed for the in situ cleaning and electrical characterization of graphene field-effect transistors during irradiation. To investigate the electrical and structural modifications of irradiated graphene field-effect transistors, their transfer characteristics as well as the corresponding Raman spectra are analyzed as a function of ion fluence for two different charge states. The irradiation experiments show a decreasing mobility with increasing fluences. The mobility reduction scales with the potential energy of the ions. In comparison to Raman spectroscopy, the transport properties of graphene show an extremely high sensitivity with respect to ion irradiation: a significant drop of the mobility is observed already at fluences below 15 ions/μm{sup 2}, which is more than one order of magnitude lower than what is required for Raman spectroscopy.

Spine-like Nanostructured Carbon Interconnected by Graphene for High-performance Supercapacitors

Science.gov (United States)

Park, Sang-Hoon; Yoon, Seung-Beom; Kim, Hyun-Kyung; Han, Joong Tark; Park, Hae-Woong; Han, Joah; Yun, Seok-Min; Jeong, Han Gi; Roh, Kwang Chul; Kim, Kwang-Bum

2014-08-01

Recent studies on supercapacitors have focused on the development of hierarchical nanostructured carbons by combining two-dimensional graphene and other conductive sp2 carbons, which differ in dimensionality, to improve their electrochemical performance. Herein, we report a strategy for synthesizing a hierarchical graphene-based carbon material, which we shall refer to as spine-like nanostructured carbon, from a one-dimensional graphitic carbon nanofiber by controlling the local graphene/graphitic structure via an expanding process and a co-solvent exfoliation method. Spine-like nanostructured carbon has a unique hierarchical structure of partially exfoliated graphitic blocks interconnected by thin graphene sheets in the same manner as in the case of ligaments. Owing to the exposed graphene layers and interconnected sp2 carbon structure, this hierarchical nanostructured carbon possesses a large, electrochemically accessible surface area with high electrical conductivity and exhibits high electrochemical performance.

Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells.

Science.gov (United States)

Jiao, Tianpeng; Liu, Jian; Wei, Dapeng; Feng, Yanhui; Song, Xuefen; Shi, Haofei; Jia, Shuming; Sun, Wentao; Du, Chunlei

2015-09-16

The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GNW electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells.

Direct patterning of highly-conductive graphene@copper composites using copper naphthenate as a resist for graphene device applications.

Science.gov (United States)

Bi, Kaixi; Xiang, Quan; Chen, Yiqin; Shi, Huimin; Li, Zhiqin; Lin, Jun; Zhang, Yongzhe; Wan, Qiang; Zhang, Guanhua; Qin, Shiqiao; Zhang, Xueao; Duan, Huigao

2017-11-09

We report an electron-beam lithography process to directly fabricate graphene@copper composite patterns without involving metal deposition, lift-off and etching processes using copper naphthenate as a high-resolution negative-tone resist. As a commonly used industrial painting product, copper naphthenate is extremely cheap with a long shelf time but demonstrates an unexpected patterning resolution better than 10 nm. With appropriate annealing under a hydrogen atmosphere, the produced graphene@copper composite patterns show high conductivity of ∼400 S cm -1 . X-ray diffraction, conformal Raman spectroscopy and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the final patterns. With the properties of high resolution and high conductivity, the patterned graphene@copper composites could be used as conductive pads and interconnects for graphene electronic devices with ohmic contacts. Compared to common fabrication processes involving metal evaporation and lift-off steps, this pattern-transfer-free fabrication process using copper naphthenate resist is direct and simple but allows comparable device performance in practical device applications.

Nanostructure of highly aromatic graphene nanosheets -- From optoelectronics to electrochemical energy storage applications

Science.gov (United States)

Biswas, Sanjib

The exceptional electrical properties along with intriguing physical and chemical aspects of graphene nanosheets can only be realized by nanostructuring these materials through the homogeneous and orderly distribution of these nanosheets without compromising the aromaticity of the native basal plane. Graphene nanosheets prepared by direct exfoliation as opposed to the graphene oxide route are necessary in order to preserve the native chemical properties of graphene basal planes. This research has been directed at optimally combining the diverse physical and chemical aspects of graphene nanosheets such as particle size, surface area and edge chemistry to fabricate nanostructured architectures for optoelectronics and high power electrochemical energy storage applications. In the first nanostructuring effort, a monolayer of these ultrathin, highly hydrophobic graphene nanosheets was prepared on a large area substrate via self-assembly at the liquid-liquid interface. Driven by the minimization of interfacial energy these planar graphene nanosheets produce a close packed monolayer structure at the liquid-liquid interface. The resulting monolayer film exhibits high electrical conductivity of more than 1000 S/cm and an optical transmission of more than 70-80% between wavelengths of 550 nm and 2000 nm making it an ideal candidate for optoelectronic applications. In the second part of this research, nanostructuring was used to create a configuration suitable for supercapacitor applications. A free standing, 100% binder free multilayer, flexible film consisting of monolayers of graphene nanosheets was prepared by utilizing the van der Waals forces of attraction between the basal plans of the graphene nanosheets coupled with capillary driven and drying-induced collapse. A major benefit in this approach is that the graphene nanosheet's attractive physical and chemical characteristics can be synthesized into an architecture consisting of large and small nanosheets to create an

Graphene-wrapped sulfur nanospheres with ultra-high sulfur loading for high energy density lithium–sulfur batteries

Energy Technology Data Exchange (ETDEWEB)

Liu, Ya; Guo, Jinxin; Zhang, Jun, E-mail: zhangjun@zjnu.cn; Su, Qingmei; Du, Gaohui, E-mail: gaohuidu@zjnu.edu.cn

2015-01-01

Graphical abstract: - Highlights: • A graphene-wrapped sulfur nanospheres composite with 91 wt% S is prepared. • It shows highly improved electrochemical performance as cathode for Li–S cell. • The PVP coating and conductive graphene minimize polysulfides dissolution. • The flexible coatings with void space accommodate the volume expansion of sulfur. - Abstract: Lithium–sulfur (Li–S) battery with high theoretical energy density is one of the most promising energy storage systems for electric vehicles and intermittent renewable energy. However, due to the poor conductivity of the active material, considerable weight of the electrode is occupied by the conductive additives. Here we report a graphene-wrapped sulfur nanospheres composite (S-nanosphere@G) with sulfur content up to 91 wt% as the high energy density cathode material for Li–S battery. The sulfur nanospheres with diameter of 400–500 nm are synthesized through a solution-based approach with the existence of polyvinylpyrrolidone (PVP). Then the sulfur nanospheres are uniformly wrapped by conductive graphene sheets through the electrostatic interaction between graphene oxide and PVP, followed by reducing of graphene oxide with hydrazine. The design of graphene wrapped sulfur nanoarchitecture provides flexible conductive graphene coating with void space to accommodate the volume expansion of sulfur and to minimize polysulfide dissolution. As a result, the S-nanosphere@G nanocomposite with 91 wt% sulfur shows a reversible initial capacity of 970 mA h g{sup −1} and an average columbic efficiency > 96% over 100 cycles at a rate of 0.2 C. Taking the total mass of electrode into account, the S-nanosphere@G composite is a promising cathode material for high energy density Li–S batteries.

A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene.

Science.gov (United States)

Liu, Lixin; Zhou, Hailong; Cheng, Rui; Chen, Yu; Lin, Yung-Chen; Qu, Yongquan; Bai, Jingwei; Ivanov, Ivan A; Liu, Gang; Huang, Yu; Duan, Xiangfeng

2012-01-28

Graphene has attracted considerable interest as a potential material for future electronics. Although mechanical peel is known to produce high quality graphene flakes, practical applications require continuous graphene layers over a large area. The catalyst-assisted chemical vapor deposition (CVD) is a promising synthetic method to deliver wafer-sized graphene. Here we present a systematic study on the nucleation and growth of crystallized graphene domains in an atmospheric pressure chemical vapor deposition (APCVD) process. Parametric studies show that the mean size of the graphene domains increases with increasing growth temperature and CH 4 partial pressure, while the density of domains decreases with increasing growth temperature and is independent of the CH 4 partial pressure. Our studies show that nucleation of graphene domains on copper substrate is highly dependent on the initial annealing temperature. A two-step synthetic process with higher initial annealing temperature but lower growth temperature is developed to reduce domain density and achieve high quality full-surface coverage of monolayer graphene films. Electrical transport measurements demonstrate that the resulting graphene exhibits a high carrier mobility of up to 3000 cm 2 V -1 s -1 at room temperature.

Investigating the mechanical and barrier properties to oxygen and fuel of high density polyethylene–graphene nanoplatelet composites

Energy Technology Data Exchange (ETDEWEB)

Honaker, K., E-mail: honakers@egr.msu.edu; Vautard, F.; Drzal, L.T.

2017-02-15

Highlights: • Melt mixing used to investigate high density polyethylene and graphene nanoplatelet composite. • Addition of graphene nanoplatelets resulted in a stiffer polymer matrix. • Presence of graphene nanoplatelets causes a decrease in oxygen and fuel permeation. - Abstract: Graphene nanoplatelets (GnP) of different sizes were investigated for their ability to modify high density polyethylene (HDPE) for potential fuel system applications, focusing on compounding via melt mixing in a twin-screw extruder. Mechanical properties, crystallinity of the polymer, and permeation to oxygen and fuel were assessed as a function of GnP concentration. The surface of GnP acted as a nucleation site for the generation of HDPE crystallites, increasing the crystallinity. The flexural properties were improved, clearly influenced by platelet size and quality of dispersion. A sharp, 46% decrease of the impact resistance was observed, even at low GnP concentration (0.2 wt.%). With a 15 wt.% GnP-M-15 (platelets with a 15 μm diameter), a 73% reduction in oxygen permeation was observed and a 74% reduction in fuel vapor transmission. This correlation was similar throughout the GnP concentration range. The smaller diameter platelets had a lesser effect on the properties.

Investigation of the Reduction of Graphene Oxide by Lithium Triethylborohydride

Directory of Open Access Journals (Sweden)

Guangyuan Xu

2016-01-01

Full Text Available The chemical reduction of a wet colloidal suspension of graphene oxide is a cost-effective and adaptable method for large scale production of “quasi” graphene for a wide variety of optoelectronic applications. In this study, modified Hummers’ procedure was used to synthesize high quality graphene oxide at 50°C. This modified protocol thus eliminates the potentially hazardous second high-temperature step in Hummers’ method for the production of GO. Furthermore, the reduction of graphene oxide by lithium triethylborohydride is demonstrated for the first time. According to FT-IR, UV-Vis, TGA, Raman, SEM/EDS, and AFM results, the reduced graphene oxide (LiEt3BH-RGO has properties comparable to other reduced graphene oxide products reported in the literature.

Three-dimensional graphene/polyaniline composite material for high-performance supercapacitor applications

International Nuclear Information System (INIS)

Liu, Huili; Wang, Yi; Gou, Xinglong; Qi, Tao; Yang, Jun; Ding, Yulong

2013-01-01

Highlights: ► A novel 3D graphene showed high specific surface area and large mesopore volume. ► Aniline monomer was polymerized in the presence of 3D graphene at room temperature. ► The supercapacitive properties were studied by CV and charge–discharge tests. ► The composite show a high gravimetric capacitance and good cyclic stability. ► The 3D graphene/polyaniline has never been report before our work. -- Abstract: A novel three-dimensional (3D) graphene/polyaniline nanocomposite material which is synthesized using in situ polymerization of aniline monomer on the graphene surface is reported as an electrode for supercapacitors. The morphology and structure of the material are characterized by scanning electron microscopy (SEM), transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD). The electrochemical properties of the resulting materials are systematically studied using cyclic voltammetry (CV) and constant current charge–discharge tests. A high gravimetric capacitance of 463 F g −1 at a scan rate of 1 mV s −1 is obtained by means of CVs with 3 mol L −1 KOH as the electrolyte. In addition, the composite material shows only 9.4% capacity loss after 500 cycles, indicating better cyclic stability for supercapacitor applications. The high specific surface area, large mesopore volume and three-dimensional nanoporous structure of 3D graphene could contribute to the high specific capacitance and good cyclic life

Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes

International Nuclear Information System (INIS)

Wu Wei; Yu Qingkai; Pei, Shin-Shem; Peng Peng; Bao Jiming; Liu Zhihong

2012-01-01

Large-scale and transferable graphene films grown on metal substrates by chemical vapor deposition (CVD) still hold great promise for future nanotechnology. To realize the promise, one of the key issues is to further improve the quality of graphene, e.g., uniform thickness, large grain size, and low defects. Here we grow graphene films on Cu foils by CVD at ambient pressure, and study the graphene nucleation and growth processes under different concentrations of carbon precursor. On the basis of the results, we develop a two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size (up to hundreds of square micrometers). Scanning electron microscopy and Raman spectroscopy characterizations confirm the film thickness and uniformity. The transferred graphene films on cover glass slips show high electrical conductivity and high optical transmittance that make them suitable as transparent conductive electrodes. The growth mechanism of CVD graphene on Cu is also discussed, and a growth model has been proposed. Our results provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications. (paper)

Facile and large-scale synthesis of high quality few-layered graphene nano-platelets via methane decomposition over unsupported iron family catalysts

Energy Technology Data Exchange (ETDEWEB)

Awadallah, Ahmed E., E-mail: ahmedelsayed_epri@yahoo.com [Process Development Division, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Aboul-Enein, Ateyya A. [Process Development Division, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Kandil, Usama F. [Petroleum Application Department, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Taha, Mahmoud Reda [Department of Civil Engineering, University of New Mexico, Albuquerque, NM 87131 (United States)

2017-04-15

High quality few-layered graphene nano-platelets (GNPs) were successfully prepared via catalytic chemical vapor deposition of methane under ambient pressure using substrate-free unsupported iron, cobalt, and nickel metallic sheets as catalysts. The bulk catalysts were prepared via combustion method using citric acid as a fuel. Various analytical techniques, including high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), thermogravimetric analysis (TGA), temperature programmed reduction (TPR) and Raman spectroscopy were employed to characterize the fresh and reduced catalysts and to identify the morphological structure of the as-grown GNPs. TEM images of the reduced metal catalysts showed that polycrystalline metallic sheets were easily produced after complete reduction of unsupported metal oxides. The data demonstrated that the formation of zero-valent metallic sheets could effectively promote the growth of GNPs on their surfaces. The unsupported Ni catalyst exhibits higher catalytic growth activity in terms of GNPs yield (254 wt%) compared with all other catalysts. Raman spectra and TEM results established that a few layers of GNPs with high crystallinity and good graphitization were produced. TGA results further demonstrated that the as-grown GNPs exhibit significantly higher thermal stability in air atmosphere compared with other synthesis methods. - Highlights: • Few-layered graphene nanoplatelets were prepared via methane catalytic decomposition. • Metallic sheets of iron group metals were used as novel catalysts. • The surfaces of metallic sheets were found to be very effective for GNPs growth. • The number of layers is dependent on the morphological structure of the catalysts. • The unsupported metallic Ni catalyst exhibited higher catalytic growth activity.

The effect of copper substrate’s roughness on graphene growth process via PECVD

Science.gov (United States)

Fan, Tengfei; Yan, Cuixia; Lu, Jianchen; Zhang, Lianchang; Cai, Jinming

2018-04-01

Despite many excellent properties, the synthesis of high quality graphene with low-cost way is still a challenge, thus many different factors have been researched. In this work, the effect of surface roughness to the graphene quality was studied. Graphene was synthesized by plasma enhanced chemical vapor deposition (PECVD) method on copper substrates with different roughness from 0.074 μm to 0.339 μm, which were prepared via annealing, corrosion or polishing, respectively. Ar+ plasma cleaning was applied before graphene growth in order to accommodate similar surface chemical reactivity to each other. Scanning electron microscope and Raman spectroscope were employed to investigate the effect of surface roughness, which reveals that the graphene quality decrease first and then increase again according to the ratio of ID/IG in Raman spectroscopy. When the ratio of ID/IG reaches the largest number, the substrate roughness is 0.127 μm, where is the graphene quality changing point. First principle calculation was applied to explain the phenomenon and revealed that it is strongly affected by the graphene grain size and quantity which can induce defects. This strategy is expected to guide the industrial production of graphene.

Hierarchically ordered macro-mesoporous ZnS microsphere with reduced graphene oxide supporter for a highly efficient photodegradation of methylene blue

Energy Technology Data Exchange (ETDEWEB)

Sookhakian, M., E-mail: m.sokhakian@gmail.com [Department of Physics, University of Malaya, Kuala Lumpur 50603 (Malaysia); Amin, Y.M. [Department of Physics, University of Malaya, Kuala Lumpur 50603 (Malaysia); Basirun, W.J. [Department of Chemistry, University of Malaya, Kuala Lumpur 50603 (Malaysia); Centre of Research in Nanotechnology and Catalysis (NanoCat), Institute of Postgraduate Studies, University Malaya, Kuala Lumpur 50603 (Malaysia)

2013-10-15

A facile one-pot method for the fabrication of high quality self-assembled hierarchically ordered macro-mesoporous ZnS microsphere–reduced graphene oxide (RGO) composite without the use of templates or surfactants is described. During the hydrothermal process, reduced graphene oxide (RGO) was loaded into the ZnS microsphere by in situ reduction of graphene oxide added in the self-assembly system. The morphology and structure of the as-prepared composites were confirmed by X-ray diffraction, high resolution transmission electron microscopy, energy dispersive X-ray analysis, Fourier transform infrared spectroscopy and Raman spectroscopy. Incorporation of reduced graphene oxide as an excellent electron-transporting material effectively suppresses the charge recombination. Hence, a significant enhancement in the photocatalytic efficiency for the photodegradation of methylene blue was observed with the ZnS–RGO composite, compared to the pure ZnS. Overall, this research results may lay down new vistas for the in situ fabrication of the ZnS–RGO composite as a highly efficient photocatalysis under visible-light irradiation and their applications in environmental protection.

Elucidation of the Signal Transduction Pathways Activated by the Plant Natriuretic Peptide AtPNP-A

KAUST Repository

Turek, Ilona

2014-01-01

Plant natriuretic peptides (PNPs) comprise a novel class of hormones that share some sequence similarity in the active site with their animal analogues that function as regulators of salt and water balance. A PNP present in Arabidopsis thaliana (At

Atomic and electronic structure of a copper/graphene interface as prepared and 1.5 years after

Science.gov (United States)

Boukhvalov, D. W.; Bazylewski, P. F.; Kukharenko, A. I.; Zhidkov, I. S.; Ponosov, Yu. S.; Kurmaev, E. Z.; Cholakh, S. O.; Lee, Y. H.; Chang, G. S.

2017-12-01

We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results were compared with density functional theory calculations of the formation energies and electronic structures of various structural defects in graphene/Cu interfaces. For evaluation of the stability of the carbon cover, we propose a two-step model. The first step is oxidation of the graphene, and the second is perforation of graphene with the removal of carbon atoms as part of the carbon dioxide molecule. Results of the modeling and experimental measurements provide evidence that graphene grown on high-quality copper substrate becomes robust and stable in time (1.5 years). However, the stability of this interface depends on the quality of the graphene and the number of native defects in the graphene and substrate. The effect of the presence of a metallic substrate with defects on the stability and electronic structure of graphene is also discussed

Graphene radio frequency receiver integrated circuit.

Science.gov (United States)

Han, Shu-Jen; Garcia, Alberto Valdes; Oida, Satoshi; Jenkins, Keith A; Haensch, Wilfried

2014-01-01

Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and downconversion mixing. All circuit components are integrated into 0.6 mm(2) area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.

Crystal structures of carbamate kinase from Giardia lamblia bound with citric acid and AMP-PNP.

Directory of Open Access Journals (Sweden)

Kap Lim

Full Text Available The parasite Giardia lamblia utilizes the L-arginine dihydrolase pathway to generate ATP from L-arginine. Carbamate kinase (CK catalyzes the last step in this pathway, converting ADP and carbamoyl phosphate to ATP and ammonium carbamate. Because the L-arginine pathway is essential for G. lamblia survival and absent in high eukaryotes including humans, the enzyme is a potential target for drug development. We have determined two crystal structures of G. lamblia CK (glCK with bound ligands. One structure, in complex with a nonhydrolyzable ATP analog, adenosine 5'-adenylyl-β,γ-imidodiphosphate (AMP-PNP, was determined at 2.6 Å resolution. The second structure, in complex with citric acid bound in the postulated carbamoyl phosphate binding site, was determined in two slightly different states at 2.1 and 2.4 Å resolution. These structures reveal conformational flexibility of an auxiliary domain (amino acid residues 123-170, which exhibits open or closed conformations or structural disorder, depending on the bound ligand. The structures also reveal a smaller conformational change in a region associated the AMP-PNP adenine binding site. The protein residues involved in binding, together with a model of the transition state, suggest that catalysis follows an in-line, predominantly dissociative, phosphotransfer reaction mechanism, and that closure of the flexible auxiliary domain is required to protect the transition state from bulk solvent.

High-performance solid-state supercapacitors based on graphene-ZnO hybrid nanocomposites

Science.gov (United States)

Li, Zijiong; Zhou, Zhihua; Yun, Gaoqian; Shi, Kai; Lv, Xiaowei; Yang, Baocheng

2013-11-01

In this paper, we report a facile low-cost synthesis of the graphene-ZnO hybrid nanocomposites for solid-state supercapacitors. Structural analysis revealed a homogeneous distribution of ZnO nanorods that are inserted in graphene nanosheets, forming a sandwiched architecture. The material exhibited a high specific capacitance of 156 F g-1 at a scan rate of 5 mV.s-1. The fabricated solid-state supercapacitor device using these graphene-ZnO hybrid nanocomposites exhibits good supercapacitive performance and long-term cycle stability. The improved supercapacitance property of these materials could be ascribed to the increased conductivity of ZnO and better utilization of graphene. These results demonstrate the potential of the graphene-ZnO hybrid nanocomposites as an electrode in high-performance supercapacitors.

Preparation of three-dimensional graphene foam for high performance supercapacitors

Directory of Open Access Journals (Sweden)

Yunjie Ping

2017-04-01

Full Text Available Supercapacitor is a new type of energy-storage device, and has been attracted widely attentions. As a two dimensional (2D nanomaterials, graphene is considered to be a promising material of supercapacitor because of its excellent properties involving high electrical conductivity and large surface area. In this paper, the large-scale graphene is successfully fabricated via environmental-friendly electrochemical exfoliation of graphite, and then, the three dimensional (3D graphene foam is prepared by using nickel foam as template and FeCl3/HCl solution as etchant. Compared with the regular 2D graphene paper, the 3D graphene foam electrode shows better electrochemical performance, and exhibits the largest specific capacitance of approximately 128 F/g at the current density of 1 A/g in 6 M KOH electrolyte. It is expected that the 3D graphene foam will have a potential application in the supercapacitors.

Mechanical cleaning of graphene

NARCIS (Netherlands)

Goossens, A.M.; Calado, V.E.; Barreiro, A.; Watanabe, K.; Taniguchi, T.; Vandersypen, L.M.K.

2012-01-01

Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force

Bioinspired, Graphene/Al2O3 Doubly Reinforced Aluminum Composites with High Strength and Toughness.

Science.gov (United States)

Zhang, Yunya; Li, Xiaodong

2017-11-08

Nacre, commonly referred to as nature's armor, has served as a blueprint for engineering stronger and tougher bioinspired materials. Nature organizes a brick-and-mortar-like architecture in nacre, with hard bricks of aragonite sandwiched with soft biopolymer layers. However, cloning nacre's entire reinforcing mechanisms in engineered materials remains a challenge. In this study, we employed hybrid graphene/Al 2 O 3 platelets with surface nanointerlocks as hard bricks for primary load bearer and mechanical interlocking, along with aluminum laminates as soft mortar for load distribution and energy dissipation, to replicate nacre's architecture and reinforcing effects in aluminum composites. Compared with aluminum, the bioinspired, graphene/Al 2 O 3 doubly reinforced aluminum composite demonstrated an exceptional, joint improvement in hardness (210%), strength (223%), stiffness (78%), and toughness (30%), which are even superior over nacre. This design strategy and model material system should guide the synthesis of bioinspired materials to achieve exceptionally high strength and toughness.

Growth of graphene from SiC{0001} surfaces and its mechanisms

International Nuclear Information System (INIS)

Norimatsu, Wataru; Kusunoki, Michiko

2014-01-01

Graphene, a one-atom-layer carbon material, can be grown by thermal decomposition of SiC. On Si-terminated SiC(0001), graphene nucleates at steps and grows layer-by-layer, and as a result a homogeneous monolayer or bilayer can be obtained. We demonstrate this mechanism both experimentally and theoretically. On the C-face (000 1-bar ), multilayer graphene nucleates not only at steps, but also on the terraces. These differences reflect the distinct differences in the reactivity of these faces. Due to its high quality and structural controllability, graphene on SiC{0001} surfaces will be a platform for high-speed graphene device applications. (paper)

Hydrophilic Graphene Preparation from Gallic Acid Modified Graphene Oxide in Magnesium Self-Propagating High Temperature Synthesis Process

Science.gov (United States)

Cao, Lei; Li, Zhenhuan; Su, Kunmei; Cheng, Bowen

2016-10-01

Hydrophilic graphene sheets were synthesized from a mixture of magnesium and gallic acid (GA) modified graphene oxide (GO) in a self-propagating high-temperature synthesis (SHS) process, and hydrophilic graphene sheets displayed the higher C/O ratio (16.36), outstanding conductivity (~88900 S/m) and excellent water-solubility. GO sheets were connected together by GA, and GA was captured to darn GO structure defects through the formation of hydrogen bonds and ester bonds. In SHS process, the most oxygen ions of GO reacted with magnesium to prevent the escape of carbon dioxide and carbon monoxide to from the structure defects associated with vacancies, and GA could take place the high-temperature carbonization, during which a large-area graphene sheets formed with a part of the structure defects being repaired. When only GO was reduced by magnesium in SHS process, and the reduced GO (rGO) exhibited the smaller sheets, the lower C/O ratio (15.26), the weaker conductivity (4200 S/m) and the poor water-solubility because rGO inevitably left behind carbon vacancies and topological defects. Therefore, the larger sheet, less edge defects and free structure defects associated with vacancies play a key role for graphene sheets good dispersion in water.

High degree reduction and restoration of graphene oxide on SiO2 at low temperature via remote Cu-assisted plasma treatment

Science.gov (United States)

Obata, Seiji; Sato, Minoru; Akada, Keishi; Saiki, Koichiro

2018-06-01

A high throughput synthesis method of graphene has been required for a long time to apply graphene to industrial applications. Of the various synthesis methods, the chemical exfoliation of graphite via graphene oxide (GO) is advantageous as far as productivity is concerned; however, the quality of the graphene produced by this method is far inferior to that synthesized by other methods, such as chemical vapor deposition on metals. Developing an effective reduction and restoration method for GO on dielectric substrates has been therefore a key issue. Here, we present a method for changing GO deposited on a dielectric substrate into high crystallinity graphene at 550 °C this method uses CH4/H2 plasma and a Cu catalyst. We found that Cu remotely catalyzed the high degree reduction and restoration of GO on SiO2 and the effect ranged over at least 8 mm. With this method, field-effect transistor devices can be fabricated without any post treatment such as a transfer process. This plasma treatment increased electron and hole mobilities of GO to 480 cm2 V‑1 s‑1 and 460 cm2 V‑1 s‑1 respectively; these values were more than 50 times greater than that of conventional reduced GO. Furthermore, the on-site conversion ensured that the shape of the GO sheets remained unchanged after the treatment. This plasma treatment realizes the high throughput synthesis of a desired shaped graphene on any substrate without any residue and damage being caused by the transfer process; as such, it expands the potential applicability of graphene.

Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors.

Science.gov (United States)

Lee, Wi Hyoung; Park, Jaesung; Sim, Sung Hyun; Lim, Soojin; Kim, Kwang S; Hong, Byung Hee; Cho, Kilwon

2011-03-30

Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm(2)/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π-π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes.

Temperature-dependent of Nonlinear Optical Conductance of Graphene-based Systems in High-intensity Terahertz Field

Institute of Scientific and Technical Information of China (English)

Jing Lv; Rui-yang Yuan; Hui Yan

2014-01-01

For multi-photon processed with the linear dispersion in the high-intensity terahertz(THz) field,we have systematically investigated the temperature-dependent nonlinear optical response of graphene-based systems, including single layer graphene, graphene superlattice and gapped graphene. In the intrinsic single layer graphene system, it demonstrates that, at low temperature, nonlinear optical conductivities of the thirdand fifth-order are respectively five and ten orders of magnitude larger than the universal conductivity with high-intensity and low frequency THz wave.In the graphene superlattice and gapped graphene systems, the optical responses enhanced because of the anisotropic massless and massive Dirac fermions.

Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates

International Nuclear Information System (INIS)

Huang Li; Xu Wen-Yan; Que Yan-De; Mao Jin-Hai; Meng Lei; Pan Li-Da; Li Geng; Wang Ye-Liang; Du Shi-Xuan; Gao Hong-Jun; Liu Yun-Qi

2013-01-01

Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercalation, seven different metals have been successfully intercalated at the interface of graphene/Ru(0001) and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru(0001) and on Ir(111), have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications. (topical review - low-dimensional nanostructures and devices)

High-performance solid-state supercapacitors based on graphene-ZnO hybrid nanocomposites

Science.gov (United States)

2013-01-01

In this paper, we report a facile low-cost synthesis of the graphene-ZnO hybrid nanocomposites for solid-state supercapacitors. Structural analysis revealed a homogeneous distribution of ZnO nanorods that are inserted in graphene nanosheets, forming a sandwiched architecture. The material exhibited a high specific capacitance of 156 F g−1 at a scan rate of 5 mV.s−1. The fabricated solid-state supercapacitor device using these graphene-ZnO hybrid nanocomposites exhibits good supercapacitive performance and long-term cycle stability. The improved supercapacitance property of these materials could be ascribed to the increased conductivity of ZnO and better utilization of graphene. These results demonstrate the potential of the graphene-ZnO hybrid nanocomposites as an electrode in high-performance supercapacitors. PMID:24215772

Synchronous exfoliation and assembly of graphene on 3D Ni(OH)2 for supercapacitors.

Science.gov (United States)

Ma, Liguo; Zheng, Maojun; Liu, Shaohua; Li, Qiang; You, Yuxiu; Wang, Faze; Ma, Li; Shen, Wenzhong

2016-11-08

Nowadays, new approaches to fabricate high-performance electrode materials are of vital importance in the renewable energy field. Here, we present a facile synthesis procedure of 3D Ni(OH) 2 /graphene hybrids for supercapacitors via synchronous electrochemical-assisted exfoliation and assembly of graphene on 3D Ni(OH) 2 networks. With the assistance of an electric field, the electrochemically exfoliated high-quality graphene can be readily, uniformly assembled on the surfaces of 3D Ni(OH) 2 . When serving as electrode materials for supercapacitors, the resulting 3D Ni(OH) 2 /graphene composites exhibited excellent specific capacitance (263 mF cm -2 at 2 mA cm -2 ), remarkable rate capability and super-long cycle life (retention of 94.1% even after 10 000 continuous charge-discharge cycles), which may be attributed to their highly porous, stable 3D architecture as well as uniform, firm anchoring of ultrathin graphene on their surfaces. Therefore, our approach provides a facile strategy for the large-scale synthesis of high-quality graphene based composites towards various applications.

Single crystalline electronic structure and growth mechanism of aligned square graphene sheets

Science.gov (United States)

Yang, H. F.; Chen, C.; Wang, H.; Liu, Z. K.; Zhang, T.; Peng, H.; Schröter, N. B. M.; Ekahana, S. A.; Jiang, J.; Yang, L. X.; Kandyba, V.; Barinov, A.; Chen, C. Y.; Avila, J.; Asensio, M. C.; Peng, H. L.; Liu, Z. F.; Chen, Y. L.

2018-03-01

Recently, commercially available copper foil has become an efficient and inexpensive catalytic substrate for scalable growth of large-area graphene films for fundamental research and applications. Interestingly, despite its hexagonal honeycomb lattice, graphene can be grown into large aligned square-shaped sheets on copper foils. Here, by applying angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES) to study the three-dimensional electronic structures of square graphene sheets grown on copper foils, we verified the high quality of individual square graphene sheets as well as their merged regions (with aligned orientation). Furthermore, by simultaneously measuring the graphene sheets and their substrate copper foil, we not only established the (001) copper surface structure but also discovered that the square graphene sheets' sides align with the ⟨110⟩ copper direction, suggesting an important role of copper substrate in the growth of square graphene sheets—which will help the development of effective methods to synthesize high-quality large-size regularly shaped graphene sheets for future applications. This work also demonstrates the effectiveness of micro-ARPES in exploring low-dimensional materials down to atomic thickness and sub-micron lateral size (e.g., besides graphene, it can also be applied to transition metal dichalcogenides and various van der Waals heterostructures)

Single crystalline electronic structure and growth mechanism of aligned square graphene sheets

Directory of Open Access Journals (Sweden)

H. F. Yang

2018-03-01

Full Text Available Recently, commercially available copper foil has become an efficient and inexpensive catalytic substrate for scalable growth of large-area graphene films for fundamental research and applications. Interestingly, despite its hexagonal honeycomb lattice, graphene can be grown into large aligned square-shaped sheets on copper foils. Here, by applying angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES to study the three-dimensional electronic structures of square graphene sheets grown on copper foils, we verified the high quality of individual square graphene sheets as well as their merged regions (with aligned orientation. Furthermore, by simultaneously measuring the graphene sheets and their substrate copper foil, we not only established the (001 copper surface structure but also discovered that the square graphene sheets’ sides align with the ⟨110⟩ copper direction, suggesting an important role of copper substrate in the growth of square graphene sheets—which will help the development of effective methods to synthesize high-quality large-size regularly shaped graphene sheets for future applications. This work also demonstrates the effectiveness of micro-ARPES in exploring low-dimensional materials down to atomic thickness and sub-micron lateral size (e.g., besides graphene, it can also be applied to transition metal dichalcogenides and various van der Waals heterostructures

Multilayer graphene growth on polar dielectric substrates using chemical vapour deposition

Science.gov (United States)

Karamat, S.; Çelik, K.; Shah Zaman, S.; Oral, A.

2018-06-01

High quality of graphene is necessary for its applications at industrial scale production. The most convenient way is its direct growth on dielectrics which avoid the transfer route of graphene from metal to dielectric substrate usually followed by graphene community. The choice of a suitable dielectric for the gate material which can replace silicon dioxide (SiO2) is in high demand. Various properties like permittivity, thermodynamic stability, film morphology, interface quality, bandgap and band alignment of other dielectrics with graphene needs more exploration. A potential dielectric material is required which could be used to grow graphene with all these qualities. Direct growth of graphene on magnesium oxide (MgO) substrates is an interesting idea and will be a new addition in the library of 2D materials. The present work is about the direct growth of graphene on MgO substrates by an ambient pressure chemical vapour deposition (CVD) method. We address the surface instability issue of the polar oxides which is the most challenging factor in MgO. Atomic force microscopy (AFM) measurements showed the topographical features of the graphene coated on MgO. X-ray photoelectron spectroscopy (XPS) study is carried out to extract information regarding the presence of necessary elements, their bonding with substrates and to confirm the sp-2 hybridization of carbon, which is a characteristic feature of graphene film. The chemical shift is due to the surface reconstruction of MgO in the prepared samples. For graphene-MgO interface, valence band offset (VBO) and conduction band offset (CBO) extracted from valence band spectra reported. Further, we predicted the energy band diagram for single layer and thin film of graphene. By using the room-temperature energy band gap values of MgO and graphene, the CBO is calculated to be 6.85 eV for single layer and 5.66 eV for few layer (1-3) of graphene layers.

Low-temperature graphene synthesis using microwave plasma CVD

International Nuclear Information System (INIS)

Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

2013-01-01

The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 10 5 Ω/sq.

Low-temperature graphene synthesis using microwave plasma CVD

Science.gov (United States)

Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

2013-02-01

The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 105 Ω/sq.

High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes.

Science.gov (United States)

Shen, Jun; Liu, Xiangzhi; Song, Xuefen; Li, Xinming; Wang, Jun; Zhou, Quan; Luo, Shi; Feng, Wenlin; Wei, Xingzhan; Lu, Shirong; Feng, Shuanglong; Du, Chunlei; Wang, Yuefeng; Shi, Haofei; Wei, Dapeng

2017-05-11

Schottky heterojunctions based on graphene-silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors are fabricated using directly grown graphene nanowalls (GNWs) as electrodes. Due to the metal-free growth process, GNWs-Si heterojunctions with an ultralow measured current noise of 3.1 fA Hz -1/2 are obtained, and the as-prepared photodetectors demonstrate specific detectivities of 5.88 × 10 13 cm Hz 1/2 W -1 and 2.27 × 10 14 cm Hz 1/2 W -1 based on the measured and calculated noise current, respectively, under ambient conditions. These are among the highest reported values for planar silicon Schottky photodetectors. In addition, an on/off ratio of 2 × 10 7 , time response of 40 μs, cut-off frequency of 8.5 kHz and responsivity of 0.52 A W -1 are simultaneously realized. The ultralow current noise is attributed to the excellent junction quality with a barrier height of 0.69 eV and an ideal factor of 1.18. Furthermore, obvious infrared photoresponse is observed in blackbody tests, and potential applications based on the photo-thermionic effect are discussed.

Unravelling The Mechanism of Basic Aqueous Methanol Dehydrogenation Catalyzed By Ru-PNP Pincer Complexes

DEFF Research Database (Denmark)

Alberico, Elisabetta; Lennox, Alastair J. J.; Vogt, Lydia K.

2016-01-01

Ruthenium PNP complex 1a (RuH(CO)Cl(HN(C2H4Pi-Pr2)2)) represents a state-of-the-art catalyst for low-temperature (methanol dehydrogenation to H2 and CO2. Herein, we describe an investigation that combines experiment, spectroscopy, and theory to provide a mechanistic rationale...

Chirality-Assisted Electronic Cloaking of Confined States in Bilayer Graphene

Science.gov (United States)

Gu, Nan; Rudner, Mark; Levitov, Leonid

2011-10-01

We show that the strong coupling of pseudospin orientation and charge carrier motion in bilayer graphene has a drastic effect on transport properties of ballistic p-n-p junctions. Electronic states with zero momentum parallel to the barrier are confined under it for one pseudospin orientation, whereas states with the opposite pseudospin tunnel through the junction totally uninfluenced by the presence of confined states. We demonstrate that the junction acts as a cloak for confined states, making them nearly invisible to electrons in the outer regions over a range of incidence angles. This behavior is manifested in the two-terminal conductance as transmission resonances with non-Lorentzian, singular peak shapes. The response of these phenomena to a weak magnetic field or electric-field-induced interlayer gap can serve as an experimental fingerprint of electronic cloaking.

Nitrogen-doped graphene-wrapped iron nanofragments for high-performance oxygen reduction electrocatalysts

Energy Technology Data Exchange (ETDEWEB)

Lee, Jang Yeol [Korea Institute of Science and Technology, Photo-Electronic Hybrid Research Center (Korea, Republic of); Kim, Na Young [Korea Institute of Science and Technology, Fuel Cell Research Center (Korea, Republic of); Shin, Dong Yun [Chungbuk National University, Department of Environmental Engineering (Korea, Republic of); Park, Hee-Young [Korea Institute of Science and Technology, Fuel Cell Research Center (Korea, Republic of); Lee, Sang-Soo [Korea Institute of Science and Technology, Photo-Electronic Hybrid Research Center (Korea, Republic of); Joon Kwon, S. [Korea Institute of Science and Technology, Nanophotonics Research Center (Korea, Republic of); Lim, Dong-Hee [Chungbuk National University, Department of Environmental Engineering (Korea, Republic of); Bong, Ki Wan [Korea University, Department of Chemical and Biological Engineering (Korea, Republic of); Son, Jeong Gon, E-mail: jgson@kist.re.kr [Korea Institute of Science and Technology, Photo-Electronic Hybrid Research Center (Korea, Republic of); Kim, Jin Young, E-mail: jinykim@kist.re.kr [Korea Institute of Science and Technology, Fuel Cell Research Center (Korea, Republic of)

2017-03-15

Transition metals, such as iron (Fe)- or cobalt (Co)-based nanomaterials, are promising electrocatalysts for oxygen reduction reactions (ORR) in fuel cells due to their high theoretical activity and low cost. However, a major challenge to using these metals in place of precious metal catalysts for ORR is their low efficiency and poor stability, thus new concepts and strategies should be needed to address this issue. Here, we report a hybrid aciniform nanostructures of Fe nanofragments embedded in thin nitrogen (N)-doped graphene (Fe@N-G) layers via a heat treatment of graphene oxide-wrapped iron oxide (Fe{sub 2}O{sub 3}) microparticles with melamine. The heat treatment leads to transformation of Fe{sub 2}O{sub 3} microparticles to nanosized zero-valent Fe fragments and formation of core-shell structures of Fe nanofragments and N-doped graphene layers. Thin N-doped graphene layers massively promote electron transfer from the encapsulated metals to the graphene surface, which efficiently optimizes the electronic structure of the graphene surface and thereby triggers ORR activity at the graphene surface. With the synergistic effect arising from the N-doped graphene and Fe nanoparticles with porous aciniform nanostructures, the Fe@N-G hybrid catalyst exhibits high catalytic activity, which was evidenced by high E{sub 1/2} of 0.82 V, onset potential of 0.93 V, and limiting current density of 4.8 mA cm{sup −2} indicating 4-electron ORR, and even exceeds the catalytic stability of the commercial Pt catalyst.

Single-layer graphene on silicon nitride micromembrane resonators

Energy Technology Data Exchange (ETDEWEB)

Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2014-02-07

Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

Phase-Separated Polyaniline/Graphene Composite Electrodes for High-Rate Electrochemical Supercapacitors.

Science.gov (United States)

Wu, Jifeng; Zhang, Qin'e; Zhou, An'an; Huang, Zhifeng; Bai, Hua; Li, Lei

2016-12-01

Polyaniline/graphene hydrogel composites with a macroscopically phase-separated structure are prepared. The composites show high specific capacitance and excellent rate performance. Further investigation demonstrates that polyaniline inside the graphene hydrogel has low rate performance, thus a phase-separated structure, in which polyaniline is mainly outside the graphene hydrogel matrix, can enhance the rate performance of the composites. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of high surface area graphene electrodes with high performance towards enzymatic oxygen reduction

International Nuclear Information System (INIS)

Di Bari, Chiara; Goñi-Urtiaga, Asier; Pita, Marcos; Shleev, Sergey; Toscano, Miguel D.; Sainz, Raquel; De Lacey, Antonio L.

2016-01-01

High surface area graphene electrodes were prepared by simultaneous electrodeposition and electroreduction of graphene oxide. The electrodeposition process was optimized in terms of pH and conductivity of the solution and the obtained graphene electrodes were characterized by X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, scanning electron microscopy and electrochemical methods (cyclic voltammetry and impedance spectroscopy). Electrodeposited electrodes were further functionalized to carry out covalent immobilization of two oxygen-reducing multicopper oxidases: laccase and bilirubin oxidase. The enzymatic electrodes were tested as direct electron transfer based biocathodes and catalytic currents as high as 1 mA/cm 2 were obtained. Finally, the mechanism of the enzymatic oxygen reduction reaction was studied for both enzymes calculating the Tafel slopes and transfer coefficients.

Graphene growth process modeling: a physical-statistical approach

Science.gov (United States)

Wu, Jian; Huang, Qiang

2014-09-01

As a zero-band semiconductor, graphene is an attractive material for a wide variety of applications such as optoelectronics. Among various techniques developed for graphene synthesis, chemical vapor deposition on copper foils shows high potential for producing few-layer and large-area graphene. Since fabrication of high-quality graphene sheets requires the understanding of growth mechanisms, and methods of characterization and control of grain size of graphene flakes, analytical modeling of graphene growth process is therefore essential for controlled fabrication. The graphene growth process starts with randomly nucleated islands that gradually develop into complex shapes, grow in size, and eventually connect together to cover the copper foil. To model this complex process, we develop a physical-statistical approach under the assumption of self-similarity during graphene growth. The growth kinetics is uncovered by separating island shapes from area growth rate. We propose to characterize the area growth velocity using a confined exponential model, which not only has clear physical explanation, but also fits the real data well. For the shape modeling, we develop a parametric shape model which can be well explained by the angular-dependent growth rate. This work can provide useful information for the control and optimization of graphene growth process on Cu foil.

An investigation on high-temperature electrical transport properties of graphene-oxide nano-thinfilms

International Nuclear Information System (INIS)

Venugopal, Gunasekaran; Krishnamoorthy, Karthikeyan; Kim, Sang-Jae

2013-01-01

High-temperature electrical transport properties are investigated for graphene-oxide nano thinfilms. The graphene-oxide nanoparticles are synthesized by modified Hummers method and characterized by UV–vis, Raman and X-ray diffraction techniques. The surface morphology of graphene-oxide film is analyzed using scanning electron and atomic force microscopy. The experimental results on high-temperature electrical studies of thinfilms exhibit metallic behavior followed by three-dimensional variable range hopping mechanism. The current–voltage characteristics at various temperatures (from 293 K to 573 K) were investigated. The effect of high-temperature on the functional groups of graphene-oxide film is evidently examined using X-ray photoelectron, thermal gravimetric analysis and Fourier transform infra-red spectroscopy. Transistor characteristics were performed after heat treatment resulting ambipolar behavior with holes and electron mobility of 127 and 66.9 cm 2 V −1 s −1 respectively. Our results are comparable to reduced graphene-oxide, indicating the advantage of our approach requires no further reduction to develop graphene-based transparent and conductive electrodes for dye-sensitized solar cells and ultra-capacitor applications.

A novel method for transferring graphene onto PDMS

International Nuclear Information System (INIS)

Hiranyawasit, Witchawate; Punpattanakul, Krirktakul; Pimpin, Alongkorn; Kim, Houngkyung; Jeon, Seokwoo; Srituravanich, Werayut

2015-01-01

Graphical abstract: - Highlights: • A novel method for graphene transfer onto PDMS substrates established. • SU-8 layer is used to strengthen the adhesion between graphene and PDMS substrate. • A great potential for the development of graphene-based microfluidic devices. - Abstract: Graphene has been attracting great attention from scientific community due to its astonishing mechanical, optical, and electrical properties, especially, graphene films synthesized by chemical vapor deposition (CVD) method are large, uniform and high-quality. CVD-grown graphene films have been successfully transferred onto various kinds of substrates such as SiO 2 /Si, quartz, PET, and plastics. However, graphene transfer onto polydimethylsiloxane (PDMS) substrates for device development has been limited due to the very low surface energy of PDMS. Here, we present a novel method to transfer graphene onto PDMS substrates by utilizing a thin layer of SU-8 as an adhesion layer. The SU-8 adhesion layer significantly improves the adhesion between the graphene layer and the PDMS substrate resulting in successful graphene transfer onto the PDMS substrate. This opens up a great potential of using graphene on PDMS substrates for the development of a wide range of graphene-based transparent and flexible devices.

A novel method for transferring graphene onto PDMS

Energy Technology Data Exchange (ETDEWEB)

Hiranyawasit, Witchawate; Punpattanakul, Krirktakul; Pimpin, Alongkorn [Department of Mechanical Engineering, Chulalongkorn University, Pathumwan, Bangkok 10330 (Thailand); Kim, Houngkyung; Jeon, Seokwoo [Department of Materials Science and Engineering, Korea Advanced Institute of Science & Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Srituravanich, Werayut, E-mail: werayut.s@chula.ac.th [Department of Mechanical Engineering, Chulalongkorn University, Pathumwan, Bangkok 10330 (Thailand)

2015-12-15

Graphical abstract: - Highlights: • A novel method for graphene transfer onto PDMS substrates established. • SU-8 layer is used to strengthen the adhesion between graphene and PDMS substrate. • A great potential for the development of graphene-based microfluidic devices. - Abstract: Graphene has been attracting great attention from scientific community due to its astonishing mechanical, optical, and electrical properties, especially, graphene films synthesized by chemical vapor deposition (CVD) method are large, uniform and high-quality. CVD-grown graphene films have been successfully transferred onto various kinds of substrates such as SiO{sub 2}/Si, quartz, PET, and plastics. However, graphene transfer onto polydimethylsiloxane (PDMS) substrates for device development has been limited due to the very low surface energy of PDMS. Here, we present a novel method to transfer graphene onto PDMS substrates by utilizing a thin layer of SU-8 as an adhesion layer. The SU-8 adhesion layer significantly improves the adhesion between the graphene layer and the PDMS substrate resulting in successful graphene transfer onto the PDMS substrate. This opens up a great potential of using graphene on PDMS substrates for the development of a wide range of graphene-based transparent and flexible devices.

Highly Conductive One-Dimensional Manganese Oxide Wires by Coating with Graphene Oxides

Science.gov (United States)

Tojo, Tomohiro; Shinohara, Masaki; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Ahm Kim, Yoong; Endo, Morinobu

2012-10-01

Through coating with graphene oxides, we have developed a chemical route to the bulk production of long, thin manganese oxide (MnO2) nanowires that have high electrical conductivity. The average diameter of these hybrid nanowires is about 25 nm, and their average length is about 800 nm. The high electrical conductivity of these nanowires (ca. 189.51+/-4.51 µS) is ascribed to the homogeneous coating with conductive graphene oxides as well as the presence of non-bonding manganese atoms. The growth mechanism of the nanowires is theoretically supported by the initiation of morphological conversion from graphene oxide to wrapped structures through the formation of covalent bonds between manganese and oxygen atoms at the graphene oxide edge.

Graphene synthesis by laser-assisted chemical vapor deposition on Ni plate and the effect of process parameters on uniform graphene growth

International Nuclear Information System (INIS)

Jiang, Juan; Lin, Zhe; Ye, Xiaohui; Zhong, Minlin; Huang, Ting; Zhu, Hongwei

2014-01-01

A fast, simple technique was developed to fabricate few-layer graphene films at ambient pressure and room temperature by laser-assisted chemical vapor deposition on polycrystalline Ni plates. Laser scanning speed was found as the most important factor in the production of few-layer graphene. The quality of graphene films was controlled by varying the laser power. Uniform graphene ribbons with a width of 1.5 mm and a length of 16 mm were obtained at a scanning speed of 1.3 mm/s and a laser power of 600 W. The developed technique provided a promising application of a high-power laser system to fabricate a graphene film. - Highlights: • Uniform few-layer graphene was fabricated at room temperature and ambient conditions. • Laser-assisted chemical vapor deposition was used to grow the layers in a few seconds. • The effect of process parameters on graphene growth was discussed. • This cost effective method could facilitate the integration of graphene in electronic devices

On the kinetic barriers of graphene homo-epitaxy

International Nuclear Information System (INIS)

Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

2014-01-01

The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size

Edge-riched graphene nanoribbon for high capacity electrode materials

International Nuclear Information System (INIS)

Ping, Yunjie; Zhang, Yupeng; Gong, Youning; Cao, Bing; Fu, Qiang; Pan, Chunxu

2017-01-01

Highlights: •The graphene nanoribbon has been successfully synthesized by longitudinal unzipping of carbon nanotubes with oxidants KMnO 4 . •Compared with graphene oxide and carbon nanotubes, graphene nanoribbon shows the largest capacitance up to ∼202F/g at a scan rate of 5 mV/s. •The importance of the location of functional groups and the importance of the edge structure. •The pseudo-capacitance material should have high electron transfer and rapid ion diffusion. -- Abstract: Carbon materials have attracted great attention for their diversified applications in supercapacitors, and different structures of carbon have been reported to exhibit dissimilar electrochemical properties. In the past, activated carbons, carbon nanotubes (CNTs), carbon nanofibers and graphene have been shown to have excellent electrochemical performances, but it still remains a problem on how to improve the capacitance of carbon-based materials effectively from the viewpoint of their giant commercial potential. Noticing that connecting chemical groups to carbon can provide large pseudo-capacitance, we hereby demonstrated that the position of the chemical groups also plays an important role in the pseudo-capacitance. In our work, we synthesized graphene nanoribbon (GNR), graphene oxide (GO) and functional MWCNTs and showed that GNR has larger capacitance (calculated to be 202 F/g at a scan rate of 5 mV/s) and energy density compared to CNTs and GO when using as electrode materials. Furthermore, the supercapacitor device based on as-synthesized GNR exhibits excellent cycle stability and rate capability which evident is potential in high performance supercapacitor. Revealing the source of the capacitance, we found that though GNR has less oxygen-containing groups, it has larger pseudo-capacitance than GO and CNTs due to the remarkable edge-riched structure with high activity in electrochemical reactions. This finding highlights the importance of edge structure in carbon-based pseudo

Graphene-based sample supports for in situ high-resolution TEM electrical investigations

International Nuclear Information System (INIS)

Westenfelder, B; Scholz, F; Meyer, J C; Biskupek, J; Algara-Siller, G; Lechner, L G; Kaiser, U; Kusterer, J; Kohn, E; Krill, C E III

2011-01-01

Specially designed transmission electron microscopy (TEM) sample carriers have been developed to enable atomically resolved studies of the heat-induced evolution of adsorbates on graphene and their influence on electrical conductivity. Here, we present a strategy for graphene-based carrier realization, evaluating its design with respect to fabrication effort and applications potential. We demonstrate that electrical current can lead to very high temperatures in suspended graphene membranes, and we determine that current-induced cleaning of graphene results from Joule heating.

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

Science.gov (United States)

Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

2015-11-11

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

Facile preparation of graphene by high-temperature electrolysis and its application in supercapacitor.

Science.gov (United States)

Jiao, Chen-Xu; Xing, Bao-Yan; Zhao, Jian-Guo; Geng, Yu; Li, Zuo-Peng

2014-01-01

Graphene is well known owing to its astonishing properties: stronger than diamond, more conductive than copper and more flexible than rubber. Because of its potential uses in industry, researchers have been searching for less toxicity ways to make graphene in large amount with lower cost. We demonstrated an efficient method to prepare graphene by high temperature electrolysis technique. High resolution scanning electron microscopy and raman spectroscopy were used to characterize the microstructure of graphene. Graphene was assembled into the supercapacitor and its performance of electrochemical capacitor was investigated by constant current charge and discharge, cyclic voltammetry and AC impedance. The results showed that the micro-morphology of the prepared graphene was multilayer and it was favorable when the electrolytic voltage was 1.5 V. When the current density is 1 mA/cm(2), the specific capacitance of the graphene supercapacitor can reach 78.01 F/g in 6 mol/L KOH electrolyte, which was an increase of 114% compared with 36.43 F/g of conventional KOH electrolyte.

The edge- and basal-plane-specific electrochemistry of a single-layer graphene sheet

Science.gov (United States)

Yuan, Wenjing; Zhou, Yu; Li, Yingru; Li, Chun; Peng, Hailin; Zhang, Jin; Liu, Zhongfan; Dai, Liming; Shi, Gaoquan

2013-01-01

Graphene has a unique atom-thick two-dimensional structure and excellent properties, making it attractive for a variety of electrochemical applications, including electrosynthesis, electrochemical sensors or electrocatalysis, and energy conversion and storage. However, the electrochemistry of single-layer graphene has not yet been well understood, possibly due to the technical difficulties in handling individual graphene sheet. Here, we report the electrochemical behavior at single-layer graphene-based electrodes, comparing the basal plane of graphene to its edge. The graphene edge showed 4 orders of magnitude higher specific capacitance, much faster electron transfer rate and stronger electrocatalytic activity than those of graphene basal plane. A convergent diffusion effect was observed at the sub-nanometer thick graphene edge-electrode to accelerate the electrochemical reactions. Coupling with the high conductivity of a high-quality graphene basal plane, graphene edge is an ideal electrode for electrocatalysis and for the storage of capacitive charges. PMID:23896697

Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

KAUST Repository

Chen, Wei

2013-03-01

High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

Programmed synthesis of freestanding graphene nanomembrane arrays.

Science.gov (United States)

Waduge, Pradeep; Larkin, Joseph; Upmanyu, Moneesh; Kar, Swastik; Wanunu, Meni

2015-02-04

Freestanding graphene membranes are unique materials. The combination of atomically thin dimensions, remarkable mechanical robustness, and chemical stability make porous and non-porous graphene membranes attractive for water purification and various sensing applications. Nanopores in graphene and other 2D materials have been identified as promising devices for next-generation DNA sequencing based on readout of either transverse DNA base-gated current or through-pore ion current. While several ground breaking studies of graphene-based nanopores for DNA analysis have been reported, all methods to date require a physical transfer of the graphene from its source of production onto an aperture support. The transfer process is slow and often leads to tears in the graphene that render many devices useless for nanopore measurements. In this work, we report a novel scalable approach for site-directed fabrication of pinhole-free graphene nanomembranes. Our approach yields high quality few-layer graphene nanomembranes produced in less than a day using a few steps that do not involve transfer. We highlight the functionality of these graphene devices by measuring DNA translocation through electron-beam fabricated nanopores in such membranes. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

How spectroscopic ellipsometry can aid graphene technology?

Energy Technology Data Exchange (ETDEWEB)

Losurdo, Maria, E-mail: maria.losurdo@cnr.it; Giangregorio, Maria M.; Bianco, Giuseppe V.; Capezzuto, Pio; Bruno, Giovanni

2014-11-28

We explore the effects of substrate, grain size, oxidation and cleaning on the optical properties of chemical vapor deposited polycrystalline monolayer graphene exploiting spectroscopic ellipsometry in the NIR-Vis–UV range. Both Drude–Lorentz oscillators' and point-by-point fit approaches are used to analyze the ellipsometric spectra. For monolayer graphene, since anisotropy cannot be resolved, an isotropic model is used. A prominent absorption peak at approximately 4.8 eV, which is a mixture of π–π* interband transitions at the M-point of the Brillouin zone and of the π-plasmonic excitation, is observed. We discuss the sensitivity of this peak to the structural and cleaning quality of graphene. The comparison with previous published dielectric function spectra of graphene is discussed giving a rationale for the observed differences. - Highlights: • Optical properties of graphene are determined by ellipsometry on copper and on glass. • Optical spectra reveal the cleaning quality of transferred graphene. • Sensitivity of absorption peak to graphene structural quality is proven. • Optical properties are proven to be sensitive to oxidation of graphene. • Electronic interaction with substrate affects graphene optical properties.

Chemical vapor deposition of graphene : A route to device integration

NARCIS (Netherlands)

Zhu, S.

2015-01-01

In this thesis, I have shown that the quality of synthetic graphene can be as high as mechanically exfoliated graphene if we can get rid of the wrinkles. Any defects, impurities and grain boundaries will induce scattering, preventing ballistic transport. The experiment described in chapter 4 was the

State memory in solution gated epitaxial graphene

Science.gov (United States)

Butko, A. V.; Butko, V. Y.; Lebedev, S. P.; Lebedev, A. A.; Davydov, V. Y.; Smirnov, A. N.; Eliseyev, I. A.; Dunaevskiy, M. S.; Kumzerov, Y. A.

2018-06-01

We studied electrical transport in transistors fabricated on a surface of high quality epitaxial graphene with density of defects as low as 5·1010 cm-2 and observed quasistatic hysteresis with a time constant in a scale of hours. This constant is in a few orders of magnitude greater than the constant previously reported in CVD graphene. The hysteresis observed here can be described as a shift of ∼+2V of the Dirac point measured during a gate voltage increase from the position of the Dirac point measured during a gate voltage decrease. This hysteresis can be characterized as a nonvolatile quasistatic state memory effect in which the state of the gated graphene is determined by its initial state prior to entering the hysteretic region. Due to this effect the difference in resistance of the gated graphene measured in the hysteretic region at the same applied voltages can be as high as 70%. The observed effect can be explained by assuming that charge carriers in graphene and oppositely charged molecular ions from the solution form quasistable interfacial complexes at the graphene interface. These complexes likely preserve the initial state by preventing charge carriers in graphene from discharging in the hysteretic region.

Facile and Scalable Synthesis Method for High-Quality Few-Layer Graphene through Solution-Based Exfoliation of Graphite.

Science.gov (United States)

Wee, Boon-Hong; Wu, Tong-Fei; Hong, Jong-Dal

2017-02-08

Here we describe a facile and scalable method for preparing defect-free graphene sheets exfoliated from graphite using the positively charged polyelectrolyte precursor poly(p-phenylenevinylene) (PPV-pre) as a stabilizer in an aqueous solution. The graphene exfoliated by PPV-pre was apparently stabilized in the solution as a form of graphene/PPV-pre (denoted to GPPV-pre), which remains in a homogeneous dispersion over a year. The thickness values of 300 selected 76% GPPV-pre flakes ranged from 1 to 10 nm, corresponding to between one and a few layers of graphene in the lateral dimensions of 1 to 2 μm. Furthermore, this approach was expected to yield a marked decrease in the density of defects in the electronic conjugation of graphene compared to that of graphene oxide (GO) obtained by Hummers' method. The positively charged GPPV-pre was employed to fabricate a poly(ethylene terephthalate) (PET) electrode layer-by-layer with negatively charged GO, yielding (GPPV-pre/GO) n film electrode. The PPV-pre and GO in the (GPPV-pre/GO) n films were simultaneously converted using hydroiodic acid vapor to fully conjugated PPV and reduced graphene oxide (RGO), respectively. The electrical conductivity of (GPPV/RGO) 23 multilayer films was 483 S/cm, about three times greater than that of the (PPV/RGO) 23 multilayer films (166 S/cm) comprising RGO (prepared by Hummers method). Furthermore, the superior electrical properties of GPPV were made evident, when comparing the capacitive performances of two supercapacitor systems; (polyaniline PANi/RGO) 30 /(GPPV/RGO) 23 /PET (volumetric capacitance = 216 F/cm 3 ; energy density = 19 mWh/cm 3 ; maximum power density = 498 W/cm 3 ) and (PANi/RGO) 30 /(PPV/RGO) 23 /PET (152 F/cm 3 ; 9 mWh/cm 3 ; 80 W/cm 3 ).

Three-Dimensional Printed Graphene Foams.

Science.gov (United States)

Sha, Junwei; Li, Yilun; Villegas Salvatierra, Rodrigo; Wang, Tuo; Dong, Pei; Ji, Yongsung; Lee, Seoung-Ki; Zhang, Chenhao; Zhang, Jibo; Smith, Robert H; Ajayan, Pulickel M; Lou, Jun; Zhao, Naiqin; Tour, James M

2017-07-25

An automated metal powder three-dimensional (3D) printing method for in situ synthesis of free-standing 3D graphene foams (GFs) was successfully modeled by manually placing a mixture of Ni and sucrose onto a platform and then using a commercial CO 2 laser to convert the Ni/sucrose mixture into 3D GFs. The sucrose acted as the solid carbon source for graphene, and the sintered Ni metal acted as the catalyst and template for graphene growth. This simple and efficient method combines powder metallurgy templating with 3D printing techniques and enables direct in situ 3D printing of GFs with no high-temperature furnace or lengthy growth process required. The 3D printed GFs show high-porosity (∼99.3%), low-density (∼0.015g cm -3 ), high-quality, and multilayered graphene features. The GFs have an electrical conductivity of ∼8.7 S cm -1 , a remarkable storage modulus of ∼11 kPa, and a high damping capacity of ∼0.06. These excellent physical properties of 3D printed GFs indicate potential applications in fields requiring rapid design and manufacturing of 3D carbon materials, for example, energy storage devices, damping materials, and sound absorption.

Mass production of highly-porous graphene for high-performance supercapacitors

Science.gov (United States)

Amiri, Ahmad; Shanbedi, Mehdi; Ahmadi, Goodarz; Eshghi, Hossein; Kazi, S. N.; Chew, B. T.; Savari, Maryam; Zubir, Mohd Nashrul Mohd

2016-09-01

This study reports on a facile and economical method for the scalable synthesis of few-layered graphene sheets by the microwave-assisted functionalization. Herein, single-layered and few-layered graphene sheets were produced by dispersion and exfoliation of functionalized graphite in ethylene glycol. Thermal treatment was used to prepare pure graphene without functional groups, and the pure graphene was labeled as thermally-treated graphene (T-GR). The morphological and statistical studies about the distribution of the number of layers showed that more than 90% of the flakes of T-GR had less than two layers and about 84% of T-GR were single-layered. The microwave-assisted exfoliation approach presents us with a possibility for a mass production of graphene at low cost and great potentials in energy storage applications of graphene-based materials. Owing to unique surface chemistry, the T-GR demonstrates an excellent energy storage performance, and the electrochemical capacitance is much higher than that of the other carbon-based nanostructures. The nanoscopic porous morphology of the T-GR-based electrodes made a significant contribution in increasing the BET surface as well as the specific capacitance of graphene. T-GR, with a capacitance of 354.1 Fg-1 at 5 mVs-1 and 264 Fg-1 at 100 mVs-1, exhibits excellent performance as a supercapacitor.

CuO nanorods/graphene nanocomposites for high-performance lithium-ion battery anodes

International Nuclear Information System (INIS)

Wang, Qi; Zhao, Jun; Shan, Wanfei; Xia, Xinbei; Xing, Lili; Xue, Xinyu

2014-01-01

Highlights: • CuO/GNS nanocomposites are synthesized by a hydrothermal method. • CuO/GNSs as LIB anodes exhibit much higher cyclability and capacity than CuO nanostructures. • Such excellent performances can be attributed to the synergistic effect between CuO and GNSs. -- Abstract: CuO/graphene nanocomposites are synthesized by a hydrothermal method, and their application as anodes of lithium-ion batteries has been investigated. CuO nanorods are uniformly coating on the surface of graphene nanosheets. CuO/graphene nanocomposites exhibit high cyclability and capacity. After 50 cycles, the capacity can maintain at 692.5 mA h g −1 at 0.1 C rate (10 h per half cycle). Such a high performance can be attributed to the synergistic effect between graphene nanosheets and CuO nanorods. The present results indicate that CuO/graphene nanocomposites have potential applications in the anodes of lithium-ion battery

High-density 3D graphene-based monolith and related materials, methods, and devices

Energy Technology Data Exchange (ETDEWEB)

Worsley, Marcus A.; Baumann, Theodore F.; Biener, Juergen; Charnvanichborikarn, Supakit; Kucheyev, Sergei; Montalvo, Elizabeth; Shin, Swanee; Tylski, Elijah

2017-03-21

A composition comprising at least one high-density graphene-based monolith, said monolith comprising a three-dimensional structure of graphene sheets crosslinked by covalent carbon bonds and having a density of at least 0.1 g/cm.sup.3. Also provided is a method comprising: preparing a reaction mixture comprising a suspension and at least one catalyst, said suspension selected from a graphene oxide (GO) suspension and a carbon nanotube suspension; curing the reaction mixture to produce a wet gel; drying the wet gel to produce a dry gel, said drying step is substantially free of supercritical drying and freeze drying; and pyrolyzing the dry gel to produce a high-density graphene-based monolith. Exceptional combinations of properties are achieved including high conductive and mechanical properties.

Low-Temperature and Rapid Growth of Large Single-Crystalline Graphene with Ethane.

Science.gov (United States)

Sun, Xiao; Lin, Li; Sun, Luzhao; Zhang, Jincan; Rui, Dingran; Li, Jiayu; Wang, Mingzhan; Tan, Congwei; Kang, Ning; Wei, Di; Xu, H Q; Peng, Hailin; Liu, Zhongfan

2018-01-01

Future applications of graphene rely highly on the production of large-area high-quality graphene, especially large single-crystalline graphene, due to the reduction of defects caused by grain boundaries. However, current large single-crystalline graphene growing methodologies are suffering from low growth rate and as a result, industrial graphene production is always confronted by high energy consumption, which is primarily caused by high growth temperature and long growth time. Herein, a new growth condition achieved via ethane being the carbon feedstock to achieve low-temperature yet rapid growth of large single-crystalline graphene is reported. Ethane condition gives a growth rate about four times faster than methane, achieving about 420 µm min -1 for the growth of sub-centimeter graphene single crystals at temperature about 1000 °C. In addition, the temperature threshold to obtain graphene using ethane can be reduced to 750 °C, lower than the general growth temperature threshold (about 1000 °C) with methane on copper foil. Meanwhile ethane always keeps higher graphene growth rate than methane under the same growth temperature. This study demonstrates that ethane is indeed a potential carbon source for efficient growth of large single-crystalline graphene, thus paves the way for graphene in high-end electronical and optoelectronical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Defect-Free Graphene Synthesized Directly at 150 °C via Chemical Vapor Deposition with No Transfer.

Science.gov (United States)

Park, Byeong-Ju; Choi, Jin-Seok; Eom, Ji-Ho; Ha, Hyunwoo; Kim, Hyun You; Lee, Seonhee; Shin, Hyunjung; Yoon, Soon-Gil

2018-02-27

Direct graphene synthesis on substrates via chemical vapor deposition (CVD) is an attractive approach for manufacturing flexible electronic devices. The temperature for graphene synthesis must be below ∼200 °C to prevent substrate deformation while fabricating flexible devices on plastic substrates. Herein, we report a process whereby defect-free graphene is directly synthesized on a variety of substrates via the introduction of an ultrathin Ti catalytic layer, due to the strong affinity of Ti to carbon. Ti with a thickness of 10 nm was naturally oxidized by exposure to air before and after the graphene synthesis, and the various functions of neither the substrates nor the graphene were influenced. This report offers experimental evidence of high-quality graphene synthesis on Ti-coated substrates at 150 °C via CVD. The proposed methodology was applied to the fabrication of flexible and transparent thin-film capacitors with top electrodes of high-quality graphene.

Highly air stable passivation of graphene based field effect devices.

Science.gov (United States)

Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

2015-02-28

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

Graphene/MnO2 hybrid nanosheets as high performance electrode materials for supercapacitors

International Nuclear Information System (INIS)

Mondal, Anjon Kumar; Wang, Bei; Su, Dawei; Wang, Ying; Chen, Shuangqiang; Zhang, Xiaogang; Wang, Guoxiu

2014-01-01

Graphene/MnO 2 hybrid nanosheets were prepared by incorporating graphene and MnO 2 nanosheets in ethylene glycol. Scanning electron microscopy and transmission electron microscopy analyses confirmed nanosheet morphology of the hybrid materials. Graphene/MnO 2 hybrid nanosheets with different ratios were investigated as electrode materials for supercapacitors by cyclic voltammetry (CV) and galvanostatic charge–discharge in 1 M Na 2 SO 4 electrolyte. We found that the graphene/MnO 2 hybrid nanosheets with a weight ratio of 1:4 (graphene:MnO 2 ) delivered the highest specific capacitance of 320 F g −1 . Graphene/MnO 2 hybrid nanosheets also exhibited good capacitance retention on 2000 cycles. - Highlights: • Graphene/MnO 2 hybrid nanosheets with different ratios were fabricated. • The specific capacitance is strongly dependent on graphene/MnO 2 ratios. • The graphene/MnO 2 hybrid electrode (1:4) exhibited high specific capacitance. • The electrode retained 84% of the initial specific capacitance after 2000 cycles

Advanced Graphene-Based Binder-Free Electrodes for High-Performance Energy Storage.

Science.gov (United States)

Ji, Junyi; Li, Yang; Peng, Wenchao; Zhang, Guoliang; Zhang, Fengbao; Fan, Xiaobin

2015-09-23

The increasing demand for energy has triggered tremendous research effort for the development of high-performance and durable energy-storage devices. Advanced graphene-based electrodes with high electrical conductivity and ion accessibility can exhibit superior electrochemical performance in energy-storage devices. Among them, binder-free configurations can enhance the electron conductivity of the electrode, which leads to a higher capacity by avoiding the addition of non-conductive and inactive binders. Graphene, a 2D material, can be fabricated into a porous and flexible structure with an interconnected conductive network. Such a conductive structure is favorable for both electron and ion transport to the entire electrode surface. In this review, the main processes used to prepare binder-free graphene-based hybrids with high porosity and well-designed electron conductive networks are summarized. Then, the applications of free-standing binder-free graphene-based electrodes in energy-storage devices are discussed. Future research aspects with regard to overcoming the technological bottlenecks are also proposed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates.

Science.gov (United States)

Lukosius, M; Dabrowski, J; Kitzmann, J; Fursenko, O; Akhtar, F; Lisker, M; Lippert, G; Schulze, S; Yamamoto, Y; Schubert, M A; Krause, H M; Wolff, A; Mai, A; Schroeder, T; Lupina, G

2016-12-14

Good quality, complementary-metal-oxide-semiconductor (CMOS) technology compatible, 200 mm graphene was obtained on Ge(001)/Si(001) wafers in this work. Chemical vapor depositions were carried out at the deposition temperatures of 885 °C using CH 4 as carbon source on epitaxial Ge(100) layers, which were grown on Si(100), prior to the graphene synthesis. Graphene layer with the 2D/G ratio ∼3 and low D mode (i.e., low concentration of defects) was measured over the entire 200 mm wafer by Raman spectroscopy. A typical full-width-at-half-maximum value of 39 cm -1 was extracted for the 2D mode, further indicating that graphene of good structural quality was produced. The study also revealed that the lack of interfacial oxide correlates with superior properties of graphene. In order to evaluate electrical properties of graphene, its 2 × 2 cm 2 pieces were transferred onto SiO 2 /Si substrates from Ge/Si wafers. The extracted sheet resistance and mobility values of transferred graphene layers were ∼1500 ± 100 Ω/sq and μ ≈ 400 ± 20 cm 2 /V s, respectively. The transferred graphene was free of metallic contaminations or mechanical damage. On the basis of results of DFT calculations, we attribute the high structural quality of graphene grown by CVD on Ge to hydrogen-induced reduction of nucleation probability, explain the appearance of graphene-induced facets on Ge(001) as a kinetic effect caused by surface step pinning at linear graphene nuclei, and clarify the orientation of graphene domains on Ge(001) as resulting from good lattice matching between Ge(001) and graphene nucleated on such nuclei.

Vapor phase polymerization deposition of conducting polymer/graphene nanocomposites as high performance electrode materials.

Science.gov (United States)

Yang, Yajie; Li, Shibin; Zhang, Luning; Xu, Jianhua; Yang, Wenyao; Jiang, Yadong

2013-05-22

In this paper, we report chemical vapor phase polymerization (VPP) deposition of novel poly(3,4-ethylenedioxythiophene) (PEDOT)/graphene nanocomposites as solid tantalum electrolyte capacitor cathode films. The PEDOT/graphene films were successfully prepared on porous tantalum pentoxide surface as cathode films through the VPP procedure. The results indicated that the high conductivity nature of PEDOT/graphene leads to the decrease of cathode films resistance and contact resistance between PEDOT/graphene and carbon paste. This nanocomposite cathode film based capacitor showed ultralow equivalent series resistance (ESR) ca. 12 mΩ and exhibited better capacitance-frequency performance than the PEDOT based capacitor. The leakage current investigation revealed that the device encapsulation process does not influence capacitor leakage current, indicating the excellent mechanical strength of PEDOT-graphene films. The graphene showed a distinct protection effect on the dielectric layer from possible mechanical damage. This high conductivity and mechanical strength graphene based conducting polymer nanocomposites indicated a promising application future for organic electrode materials.

Alloyed surfaces: New substrates for graphene growth

Science.gov (United States)

Tresca, C.; Verbitskiy, N. I.; Fedorov, A.; Grüneis, A.; Profeta, G.

2017-11-01

We report a systematic ab-initio density functional theory investigation of Ni(111) surface alloyed with elements of group IV (Si, Ge and Sn), demonstrating the possibility to use it to grow high quality graphene. Ni(111) surface represents an ideal substrate for graphene, due to its catalytic properties and perfect matching with the graphene lattice constant. However, Dirac bands of graphene growth on Ni(111) are completely destroyed due to the strong hybridization between carbon pz and Ni d orbitals. Group IV atoms, namely Si, Ge and Sn, once deposited on Ni(111) surface, form an ordered alloyed surface with √{ 3} ×√{ 3} -R30° reconstruction. We demonstrate that, at variance with the pure Ni(111) surface, alloyed surfaces effectively decouple graphene from the substrate, resulting unstrained due to the nearly perfect lattice matching and preserves linear Dirac bands without the strong hybridization with Ni d states. The proposed surfaces can be prepared before graphene growth without resorting on post-growth processes which necessarily alter the electronic and structural properties of graphene.

Graphene electric double layer capacitor with ultra-high-power performance

International Nuclear Information System (INIS)

Miller, John R.; Outlaw, R.A.; Holloway, B.C.

2011-01-01

We have demonstrated, for the first time, efficient 120 Hz filtering by an electric double layer capacitor (EDLC). The key to this ultra-high-power performance is electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized both electronic and ionic resistance and produced capacitors having RC time-constants of less than 200 μs. Significantly, graphene nanosheets have a preponderance of exposed edge planes that greatly increase stored charge over designs relying on basal plane surfaces. Collectively these factors make vertically oriented graphene nanosheet electrodes ideally suited for producing high-frequency EDLCs. Capacitors constructed with these electrodes are predicted to be significantly smaller than aluminum electrolyte capacitors that they could functionally replace plus be manufactured using standard semiconductor process equipment, creating interesting commercial opportunities.

Graphene Thermal Properties: Applications in Thermal Management and Energy Storage

Directory of Open Access Journals (Sweden)

Jackie D. Renteria

2014-11-01

Full Text Available We review the thermal properties of graphene, few-layer graphene and graphene nanoribbons, and discuss practical applications of graphene in thermal management and energy storage. The first part of the review describes the state-of-the-art in the graphene thermal field focusing on recently reported experimental and theoretical data for heat conduction in graphene and graphene nanoribbons. The effects of the sample size, shape, quality, strain distribution, isotope composition, and point-defect concentration are included in the summary. The second part of the review outlines thermal properties of graphene-enhanced phase change materials used in energy storage. It is shown that the use of liquid-phase-exfoliated graphene as filler material in phase change materials is promising for thermal management of high-power-density battery parks. The reported experimental and modeling results indicate that graphene has the potential to outperform metal nanoparticles, carbon nanotubes, and other carbon allotropes as filler in thermal management materials.

Impact of electron-electron Coulomb interaction on the high harmonic generation process in graphene

Science.gov (United States)

Avetissian, H. K.; Mkrtchian, G. F.

2018-03-01

Generation of high harmonics in a monolayer graphene initiated by a strong coherent radiation field, taking into account electron-electron Coulomb interaction, is investigated. A microscopic theory describing the nonlinear optical response of graphene is developed. The Coulomb interaction of electrons is treated in the scope of dynamic Hartree-Fock approximation. The closed set of integrodifferential equations for the single-particle density matrix of a graphene quantum structure is solved numerically. The obtained solutions show the significance of many-body Coulomb interaction on the high harmonic generation process in graphene.

Localized in situ polymerization on graphene surfaces for stabilized graphene dispersions.

Science.gov (United States)

Das, Sriya; Wajid, Ahmed S; Shelburne, John L; Liao, Yen-Chih; Green, Micah J

2011-06-01

We demonstrate a novel in situ polymerization technique to develop localized polymer coatings on the surface of dispersed pristine graphene sheets. Graphene sheets show great promise as strong, conductive fillers in polymer nanocomposites; however, difficulties in dispersion quality and interfacial strength between filler and matrix have been a persistent problem for graphene-based nanocomposites, particularly for pristine graphene. With this in mind, a physisorbed polymer layer is used to stabilize graphene sheets in solution. To create this protective layer, we formed an organic microenvironment around dispersed graphene sheets in surfactant solutions, and created a nylon 6, 10 or nylon 6, 6 coating via interfacial polymerization. Technique lies at the intersection of emulsion and admicellar polymerization; a similar technique was originally developed to protect luminescent properties of carbon nanotubes in solution. These coated graphene dispersions are aggregation-resistant and may be reversibly redispersed in water even after freeze-drying. The coated graphene holds promise for a number of applications, including multifunctional graphene-polymer nanocomposites. © 2011 American Chemical Society

Graphene/VO2 hybrid material for high performance electrochemical capacitor

International Nuclear Information System (INIS)

Deng, Lingjuan; Zhang, Gaini; Kang, Liping; Lei, Zhibin; Liu, Chunling; Liu, Zong-Huai

2013-01-01

Graphical abstract: Graphene/VO 2 hybrid materials are prepared by one-step simultaneous hydrothermal reduction technology. The prepared graphene (1.0)/VO 2 hybrid material shows a specific capacitances of 225 F g −1 in 0.5 mol L −1 K 2 SO 4 solution. Furthermore, an asymmetric electrochemical capacitor with graphene (1.0)/VO 2 as a positive electrode and graphene as a negative electrode is assembled, and it can work in a cell voltage of 1.7 V and show excellent capacitive property. - Highlights: • Graphene/VO 2 hybrid material has been prepared by one-step hydrothermal reduction. • Graphene/VO 2 hybrid material exhibits high specific capacitance. • An asymmetric capacitor working at 1.7 V in aqueous solution is assembled based on graphene/VO 2 electrode. • The asymmetric capacitor exhibits high energy density. - Abstract: Vanadium oxides have attracted significant attention for electrochemical capacitor because of their extensive multifunctional properties. In the present work, graphene/VO 2 (RG/VO 2 ) hybrid materials with different RG amounts are prepared in a mixture of ammonium vanadate, formic acid and graphite oxide (GO) nanosheets by one-step simultaneous hydrothermal reduction technology. The hydrothermal treatment makes the reduction of GO into RG and the formation of VO 2 particles with starfruit morphology. The starfruit-like VO 2 particles are uniformly embedded in the hole constructed by RG nanosheets, which makes the electrode–electrolyte contact better. A high specific capacitance of 225 F g −1 has been achieved for RG(1.0)/VO 2 electrode with RG content of 26 wt% in 0.5 mol L −1 K 2 SO 4 electrolyte. An asymmetrical electrochemical capacitor is assembled by using RG(1.0)/VO 2 as positive electrode and RG as negative electrode, and it can be reversibly charged–discharged at a cell voltage of 1.7 V in 0.5 mol L −1 K 2 SO 4 electrolyte. The asymmetrical capacitor can deliver an energy density of 22.8 Wh kg −1 at a power density

Low temperature synthesis and field emission characteristics of single to few layered graphene grown using PECVD

Energy Technology Data Exchange (ETDEWEB)

Kumar, Avshish; Khan, Sunny; Zulfequar, M.; Harsh; Husain, Mushahid, E-mail: mush_reslab@rediffmail.com

2017-04-30

Highlights: • Graphene was synthesized by PECVD system at a low temperature of 600 °C. • From different characterization techniques, the presence of single and few layered graphene was confirmed. • X-ray diffraction pattern of the graphene showed single crystalline nature of the film. • The as-grown graphene films were observed extremely good field emitters with long term emission current stability. - Abstract: In this work, high-quality graphene has successfully been synthesized on copper (Cu) coated Silicon (Si) substrate at very large-area by plasma enhanced chemical vapor deposition system. This method is low cost and highly effective for synthesizing graphene relatively at low temperature of 600 °C. Electron microscopy images have shown that surface morphology of the grown samples is quite uniform consisting of single layered graphene (SLG) to few layered graphene (FLG). Raman spectra reveal that graphene has been grown with high-quality having negligible defects and the observation of G and G' peaks is also an indicative of stokes phonon energy shift caused due to laser excitation. Scanning probe microscopy image also depicts the synthesis of single to few layered graphene. The field emission characteristics of as-grown graphene samples were studied in a planar diode configuration at room temperature. The graphene samples were observed to be a good field emitter having low turn-on field, higher field amplification factor and long term emission current stability.

Clean-lifting transfer of large-area residual-free graphene films.

Science.gov (United States)

Wang, Di-Yan; Huang, I-Sheng; Ho, Po-Hsun; Li, Shao-Sian; Yeh, Yun-Chieh; Wang, Duan-Wei; Chen, Wei-Liang; Lee, Yu-Yang; Chang, Yu-Ming; Chen, Chia-Chun; Liang, Chi-Te; Chen, Chun-Wei

2013-08-27

A unique "clean-lifting transfer" (CLT) technique that applies a controllable electrostatic force to transfer large-area and high-quality CVD-grown graphene onto various rigid or flexible substrates is reported. The CLT technique without using any organic support or adhesives can produce residual-free graphene films with large-area processability, and has great potential for future industrial production of graphene-based electronics or optoelectronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Performance assessment of the (Th,U)O2 HTI-Biso coated particle under PNP/HHT irradiation conditions

International Nuclear Information System (INIS)

Kania, M.J.; Nickel, H.

1980-11-01

The HTI Biso Particle, Variant-I: consisting of a dense 400 μm-diameter (Th,U)O 2 -kernel with a Biso coating using a methane derived pyrocarbon layer (HTI), is a candidate fuel for the advanced PNP/HHT High Temperature Reactor systems. This report presents the results of a comprehensive performance assessment of Variant-I represented by six relevant particle batches irradiated in 12 accelerated irradiation experiments. Fuel performance was judged based upon PNP/HHT qualification requirements with regard to in-reactor operating conditions and end-of-life (EOL) coated particle failure fraction. Fuel operating conditions in each irradiation experiment were obtained from two sources: 1) a thorough review of all available irradiation data on each experiment; and 2) a two-dimensional (R,theta) thermal modeling computer code, R2KTMP, was developed to calculate fuel operating temperature distributions within spherical elements. End-of-life particle failure fractions were determined from: gaseous fission product release, based on in-reactor R/B measurements and postirradiation annealing and room temperature investigations; solid fission product release, from single particle 137 Cs release into fuel element matrix and hot-gaseous chlorine leaching; and visual and ceramographic examinations. Failure fractions determined by solid fission product release yielded values 2-35 times higher than those determined by gaseous fission product release. (orig.) [de

Forged hollows (alloy 617) for PNP-hot gas collectors

International Nuclear Information System (INIS)

Hofmann, F.

1984-01-01

When the partners in the PNP-Project decided to manufacture components, such as gas collectors, from material of type alloy 617, the problem arose that required semi-fabricated products, especially forged hollows weighing several tons each, were not available. As VDM (Vereinigte Deutsche Metallwerke AG) had already experience in production of other semi-fabricated products of this alloy, attempts were made based on this knowledge, to develop manufacturing methods for forged hollows. The aim was to produce hollows as long as possible, and to keep the welding cost minimum. Welded seams are always critical during fabrication, as well as during later inspection under actual operating conditions. The three stage plan used to perform the above task illustrates the development aims is described

Mechanical exfoliation of epitaxial graphene on Ir(111) enabled by Br2 intercalation.

Science.gov (United States)

Herbig, Charlotte; Kaiser, Markus; Bendiab, Nedjma; Schumacher, Stefan; Förster, Daniel F; Coraux, Johann; Meerholz, Klaus; Michely, Thomas; Busse, Carsten

2012-08-08

We show here that Br(2) intercalation is an efficient method to enable exfoliation of epitaxial graphene on metals by adhesive tape. We exemplify this method for high-quality graphene of macroscopic extension on Ir(111). The sample quality and the transfer process are monitored using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), scanning electron microscopy (SEM) and Raman spectroscopy. The developed process provides an opportunity for preparing graphene of strictly monatomic thickness and well-defined orientation including the transfer to poly(ethylene terephthalate) (PET) foil.

Nitrogen-Superdoped 3D Graphene Networks for High-Performance Supercapacitors.

Science.gov (United States)

Zhang, Weili; Xu, Chuan; Ma, Chaoqun; Li, Guoxian; Wang, Yuzuo; Zhang, Kaiyu; Li, Feng; Liu, Chang; Cheng, Hui-Ming; Du, Youwei; Tang, Nujiang; Ren, Wencai

2017-09-01

An N-superdoped 3D graphene network structure with an N-doping level up to 15.8 at% for high-performance supercapacitor is designed and synthesized, in which the graphene foam with high conductivity acts as skeleton and nested with N-superdoped reduced graphene oxide arogels. This material shows a highly conductive interconnected 3D porous structure (3.33 S cm -1 ), large surface area (583 m 2 g -1 ), low internal resistance (0.4 Ω), good wettability, and a great number of active sites. Because of the multiple synergistic effects of these features, the supercapacitors based on this material show a remarkably excellent electrochemical behavior with a high specific capacitance (of up to 380, 332, and 245 F g -1 in alkaline, acidic, and neutral electrolytes measured in three-electrode configuration, respectively, 297 F g -1 in alkaline electrolytes measured in two-electrode configuration), good rate capability, excellent cycling stability (93.5% retention after 4600 cycles), and low internal resistance (0.4 Ω), resulting in high power density with proper high energy density. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Soluble Graphene Nanosheets from Recycled Graphite of Spent Lithium Ion Batteries

Science.gov (United States)

Zhao, Liangliang; Liu, Xiya; Wan, Chuanyun; Ye, Xiangrong; Wu, Fanhong

2018-02-01

Soluble graphene nanosheets are fabricated from recycled graphite of spent lithium ion batteries through a modified Hammers process followed by deoxygenation with NaOH-KOH eutectic. Ultrasonic exfoliation in N-methyl-pyrrolidone indicates the loosened graphene layers in recycled graphite are prone to exfoliation. Reduction of the exfoliated graphene oxide sheets was conducted in molten NaOH-KOH eutectic at different temperatures. The results show that molten NaOH-KOH effectively eliminates the unsaturated oxygen-containing moieties from the exfoliated graphene oxide sheets while creating more hydroxyl functional groups. Higher temperature treatment is more prone to remove hydroxyls while producing the shrinkage on the surface of graphene sheets. Graphene sheet with a good solubility is produced when the graphene oxide is heat-treated at 220 °C for 10 h. After reduction, the graphene oxide sheets exhibit excellent dispersibility or solubility in water, ethanol and other polar solvents, therefore being highly desirable for solution processing of graphene materials. Such study not only identifies a high-quality stockpile to prepare soluble graphene but also paves a feasible alternative of graphite recycling from spent lithium batteries.

Flower-like SnO2/graphene composite for high-capacity lithium storage

International Nuclear Information System (INIS)

Liu Hongdong; Huang Jiamu; Li Xinlu; Liu Jia; Zhang Yuxin; Du Kun

2012-01-01

Flower-like SnO 2 /graphene composite is synthesized by a simple hydrothermal method for high-capacity lithium storage. The as-prepared products are characterized by XRD, FTIR, FESEM, TGA and Nitrogen adsorption/desorption. The electrochemical performance of the flower-like SnO 2 /graphene composite is measured by cyclic voltammetry and galvanostatic charge/discharge cycling. The results show that the flower-like SnO 2 nanorod clusters are 800 nm in size and homogeneously adhere on graphene sheets. The flower-like SnO 2 /graphene composite displays superior Li-battery performance with large reversible capacity, excellent cyclic performance and good rate capability.

Temp erature-dep endent of Nonlinear Optical Conductance of Graphene-based Systems in High-intensity Terahertz Field

Institute of Scientific and Technical Information of China (English)

Jing Lv; Rui-yang Yuan; Hui Yan

2014-01-01

For multi-photon processed with the linear dispersion in the high-intensity terahertz (THz) field, we have systematically investigated the temperature-dependent nonlinear optical response of graphene-based systems, including single layer graphene, graphene superlattice and gapped graphene. In the intrinsic single layer graphene system, it demonstrates that, at low temperature, nonlinear optical conductivities of the third-and fifth-order are respectively five and ten orders of magnitude larger than the universal conductivity with high-intensity and low frequency THz wave.In the graphene superlattice and gapped graphene systems, the optical responses enhanced because of the anisotropic massless and massive Dirac fermions.

High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

Science.gov (United States)

Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

2015-05-05

For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

Science.gov (United States)

Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

2015-05-01

For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

A high-performance supercapacitor electrode based on N-doped porous graphene

Science.gov (United States)

Dai, Shuge; Liu, Zhen; Zhao, Bote; Zeng, Jianhuang; Hu, Hao; Zhang, Qiaobao; Chen, Dongchang; Qu, Chong; Dang, Dai; Liu, Meilin

2018-05-01

The development of high-performance supercapacitors (SCs) often faces some contradictory and competing requirements such as excellent rate capability, long cycling life, and high energy density. One effective strategy is to explore electrode materials of high capacitance, electrode architectures of fast charge and mass transfer, and electrolytes of wide voltage window. Here we report a facile and readily scalable strategy to produce high-performance N-doped graphene with a high specific capacitance (∼390 F g-1). A symmetric SC device with a wide voltage window of 3.5 V is also successfully fabricated based on the N-doped graphene electrode. More importantly, the as-assembled symmetric SC delivers a high energy density of 55 Wh kg-1 at a power density of 1800 W kg-1 while maintaining superior cycling life (retaining 96.6% of the initial capacitance after 20,000 cycles). Even at a power density as high as 8800 W kg-1, it still retains an energy density of 29 Wh kg-1, higher than those of previously reported graphene-based symmetric SCs.

Low Temperature Graphene Synthesis from Poly(methyl methacrylate) Using Microwave Plasma Treatment

Science.gov (United States)

Yamada, Takatoshi; Ishihara, Masatou; Hasegawa, Masataka

2013-11-01

A graphene film having low sheet resistance (600 Ω/sq.) was synthesized at low temperatures of 280 °C. Utilizing microwave plasma treatment, graphene films were synthesized from a solid phase on a copper surface. The full width at half maximum of the 2D-band in the Raman spectrum indicated that a high quality graphene film was formed. Cross-sectional transmission electron microscopy observation revealed that the deposited graphene films consisted of single- or double-layer graphene flakes of nanometer order on the Cu surface, which agrees with the estimated number of layers from an average optical transmittance of 96%.

Riboflavin enhanced fluorescence of highly reduced graphene oxide

Science.gov (United States)

Iliut, Maria; Gabudean, Ana-Maria; Leordean, Cosmin; Simon, Timea; Teodorescu, Cristian-Mihail; Astilean, Simion

2013-10-01

The improvement of graphene derivates' fluorescence properties is a challenging topic and very few ways were reported up to now. In this Letter we propose an easy method to enhance the fluorescence of highly reduced graphene oxide (rGO) through non-covalent binding to a molecular fluorophore, namely the riboflavin (Rb). While the fluorescence of Rb is quenched, the Rb - decorated rGO exhibits strong blue fluorescence and significantly increased fluorescence lifetime, as compared to its pristine form. The data reported here represent a promising start towards tailoring the optical properties of rGOs, having utmost importance in optical applications.

SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

Energy Technology Data Exchange (ETDEWEB)

Al-Mumen, Haider [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Electrical Engineering, University of Babylon, Babylon (Iraq); Dong, Lixin; Li, Wen, E-mail: wenli@egr.msu.edu [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

2013-12-02

N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.

Graphene oxide quantum dot-derived nitrogen-enriched hybrid graphene nanosheets by simple photochemical doping for high-performance supercapacitors

Science.gov (United States)

Xu, Yongjie; Li, Xinyu; Hu, Guanghui; Wu, Ting; Luo, Yi; Sun, Lang; Tang, Tao; Wen, Jianfeng; Wang, Heng; Li, Ming

2017-11-01

Nitrogen-enriched graphene was fabricated via a facile strategy. Graphene oxide (GO) nanosheets and graphene oxide quantum dots (GQDs) were used as a structure-directing agent and in situ activating agent, respectively, after photoreduction under NH3 atmosphere. The combination of photoreduction and NH3 not only reduced GO and GQD composites (GO/GQDs) within a shorter duration but also doped a high level of nitrogen on the composites (NrGO/GQDs). The nitrogen content of NrGO/GQDs reached as high as 18.86 at% within 5 min of irradiation. Benefiting from the nitrogen-enriched GO/GQDs hybrid structure, GQDs effectively prevent the agglomeration of GO sheets and increased the numbers of ion channels in the material. Meanwhile, the high levels of nitrogen improved electrical conductivity and strengthened the binding energy between GQD and GO sheets. Compared with reduced GO and low nitrogen-doped reduced GO, NrGO/GQD electrodes exhibited better electrochemical characteristics with a high specific capacitance of 344 F g-1 at a current density of 0.25 A g-1. Moreover, the NrGO/GQD electrodes exhibited 82% capacitance retention after 3000 cycles at a current density of 0.8 A g-1 in 6 M KOH electrolyte. More importantly, the NrGO/GQD electrodes deliver a high energy density of 43 Wh kg-1 at a power density of 417 W kg-1 in 1 M Li2SO4 electrolyte. The nitrogen-doped graphene and corresponding supercapacitor presented in this study are novel materials with potential applications in advanced energy storage systems.

Hydrothermal synthesis of highly nitrogen-doped few-layer graphene via solid–gas reaction

International Nuclear Information System (INIS)

Liang, Xianqing; Zhong, Jun; Shi, Yalin; Guo, Jin; Huang, Guolong; Hong, Caihao; Zhao, Yidong

2015-01-01

Highlights: • A novel approach to synthesis of N-doped few-layer graphene has been developed. • The high doping levels of N in products are achieved. • XPS and XANES results reveal a thermal transformation of N bonding configurations. • The developed method is cost-effective and eco-friendly. - Abstract: Nitrogen-doped (N-doped) graphene sheets with high doping concentration were facilely synthesized through solid–gas reaction of graphene oxide (GO) with ammonia vapor in a self-designed hydrothermal system. The morphology, surface chemistry and electronic structure of N-doped graphene sheets were investigated by TEM, AFM, XRD, XPS, XANES and Raman characterizations. Upon hydrothermal treatment, up to 13.22 at% of nitrogen could be introduced into the crumpled few-layer graphene sheets. Both XPS and XANES analysis reveal that the reaction between oxygen functional groups in GO and ammonia vapor produces amide and amine species in hydrothermally treated GO (HTGO). Subsequent thermal annealing of the resultant HTGO introduces a gradual transformation of nitrogen bonding configurations in graphene sheets from amine N to pyridinic and graphitic N with the increase of annealing temperature. This study provides a simple but cost-effective and eco-friendly method to prepare N-doped graphene materials in large-scale for potential applications

High surface area graphene-supported metal chalcogenide assembly

Science.gov (United States)

Worsley, Marcus A.; Kuntz, Joshua D.; Orme, Christine A.

2017-04-25

Disclosed here is a method for hydrocarbon conversion, comprising contacting at least one graphene-supported assembly with at least one hydrocarbon feedstock, wherein the graphene-supported assembly comprises (i) a three-dimensional network of graphene sheets crosslinked by covalent carbon bonds and (ii) at least one metal chalcogenide compound disposed on the graphene sheets, wherein the chalcogen of the metal chalcogenide compound is selected from S, Se and Te, and wherein the metal chalcogenide compound accounts for at least 20 wt. % of the graphene-supported assembly.

Monolayer graphene dispersion and radiative cooling for high power LED

Science.gov (United States)

Hsiao, Tun-Jen; Eyassu, Tsehaye; Henderson, Kimberly; Kim, Taesam; Lin, Chhiu-Tsu

2013-10-01

Molecular fan, a radiative cooling by thin film, has been developed and its application for compact electronic devices has been evaluated. The enhanced surface emissivity and heat dissipation efficiency of the molecular fan coating are shown to correlate with the quantization of lattice modes in active nanomaterials. The highly quantized G and 2D bands in graphene are achieved by our dispersion technique, and then incorporated in an organic-inorganic acrylate emulsion to form a coating assembly on heat sinks (for LED and CPU). This water-based dielectric layer coating has been formulated and applied on metal core printed circuit boards. The heat dissipation efficiency and breakdown voltage are evaluated by a temperature-monitoring system and a high-voltage breakdown tester. The molecular fan coating on heat dissipation units is able to decrease the equilibrium junction temperature by 29.1 ° C, while functioning as a dielectric layer with a high breakdown voltage (>5 kV). The heat dissipation performance of the molecular fan coating applied on LED devices shows that the coated 50 W LED gives an enhanced cooling of 20% at constant light brightness. The schematics of monolayer graphene dispersion, undispersed graphene platelet, and continuous graphene sheet are illustrated and discussed to explain the mechanisms of radiative cooling, radiative/non-radiative, and non-radiative heat re-accumulation.

Monolayer graphene dispersion and radiative cooling for high power LED

International Nuclear Information System (INIS)

Hsiao, Tun-Jen; Eyassu, Tsehaye; Henderson, Kimberly; Kim, Taesam; Lin, Chhiu-Tsu

2013-01-01

Molecular fan, a radiative cooling by thin film, has been developed and its application for compact electronic devices has been evaluated. The enhanced surface emissivity and heat dissipation efficiency of the molecular fan coating are shown to correlate with the quantization of lattice modes in active nanomaterials. The highly quantized G and 2D bands in graphene are achieved by our dispersion technique, and then incorporated in an organic-inorganic acrylate emulsion to form a coating assembly on heat sinks (for LED and CPU). This water-based dielectric layer coating has been formulated and applied on metal core printed circuit boards. The heat dissipation efficiency and breakdown voltage are evaluated by a temperature-monitoring system and a high-voltage breakdown tester. The molecular fan coating on heat dissipation units is able to decrease the equilibrium junction temperature by 29.1 ° C, while functioning as a dielectric layer with a high breakdown voltage (>5 kV). The heat dissipation performance of the molecular fan coating applied on LED devices shows that the coated 50 W LED gives an enhanced cooling of 20% at constant light brightness. The schematics of monolayer graphene dispersion, undispersed graphene platelet, and continuous graphene sheet are illustrated and discussed to explain the mechanisms of radiative cooling, radiative/non-radiative, and non-radiative heat re-accumulation. (paper)

Graphene-based wireless bacteria detection on tooth enamel

Science.gov (United States)

Mannoor, Manu S.; Tao, Hu; Clayton, Jefferson D.; Sengupta, Amartya; Kaplan, David L.; Naik, Rajesh R.; Verma, Naveen; Omenetto, Fiorenzo G.; McAlpine, Michael C.

2012-03-01

Direct interfacing of nanosensors onto biomaterials could impact health quality monitoring and adaptive threat detection. Graphene is capable of highly sensitive analyte detection due to its nanoscale nature. Here we show that graphene can be printed onto water-soluble silk. This in turn permits intimate biotransfer of graphene nanosensors onto biomaterials, including tooth enamel. The result is a fully biointerfaced sensing platform, which can be tuned to detect target analytes. For example, via self-assembly of antimicrobial peptides onto graphene, we show bioselective detection of bacteria at single-cell levels. Incorporation of a resonant coil eliminates the need for onboard power and external connections. Combining these elements yields two-tiered interfacing of peptide-graphene nanosensors with biomaterials. In particular, we demonstrate integration onto a tooth for remote monitoring of respiration and bacteria detection in saliva. Overall, this strategy of interfacing graphene nanosensors with biomaterials represents a versatile approach for ubiquitous detection of biochemical targets.

Visualizing copper assisted graphene growth in nanoscale

Science.gov (United States)

Rosmi, Mohamad Saufi; Yusop, Mohd Zamri; Kalita, Golap; Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki

2014-01-01

Control synthesis of high quality large-area graphene on transition metals (TMs) by chemical vapor deposition (CVD) is the most fascinating approach for practical device applications. Interaction of carbon atoms and TMs is quite critical to obtain graphene with precise layer number, crystal size and structure. Here, we reveal a solid phase reaction process to achieve Cu assisted graphene growth in nanoscale by in-situ transmission electron microscope (TEM). Significant structural transformation of amorphous carbon nanofiber (CNF) coated with Cu is observed with an applied potential in a two probe system. The coated Cu particle recrystallize and agglomerate toward the cathode with applied potential due to joule heating and large thermal gradient. Consequently, the amorphous carbon start crystallizing and forming sp2 hybridized carbon to form graphene sheet from the tip of Cu surface. We observed structural deformation and breaking of the graphene nanoribbon with a higher applied potential, attributing to saturated current flow and induced Joule heating. The observed graphene formation in nanoscale by the in-situ TEM process can be significant to understand carbon atoms and Cu interaction. PMID:25523645

Effects of graphene imperfections on the structure of self-assembled pentacene films

International Nuclear Information System (INIS)

Jung, W; Ahn, S J; Lee, S Y; Kim, Y; Shin, H-C; Moon, Y; Park, C-Y; Ahn, J R; Woo, S H

2015-01-01

The quality of pentacene films in pentacene-based devices significantly affects their performance. In this report, the effects of various defects in graphene on a pentacene film were studied with scanning tunneling microscopy. The two most common defects found in the epitaxial graphene grown on SiC(0 0 0 1) substrates were subsurface carbon nanotube (CNT) defects and step edges. The most significant perturbation of the pentacene films was induced by step edges between single-layer and bilayer graphene domains, while the effect of step edges between single-layer domains was marginal. The subsurface CNT defects slightly distorted the structure of the single-layer pentacene, but the influence of such defects decreased as the thickness of the pentacene film increased. These results suggest that the uniformity of the graphene layer is the most important parameter in the growth of high-quality pentacene films on graphene. (paper)

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

Science.gov (United States)

Tai, Lixuan; Zhu, Daming; Liu, Xing; Yang, Tieying; Wang, Lei; Wang, Rui; Jiang, Sheng; Chen, Zhenhua; Xu, Zhongmin; Li, Xiaolong

2018-06-01

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [Figure not available: see fulltext.

Sublimation-assisted graphene transfer technique based on small polyaromatic hydrocarbons

Science.gov (United States)

Chen, Mingguang; Stekovic, Dejan; Li, Wangxiang; Arkook, Bassim; Haddon, Robert C.; Bekyarova, Elena

2017-06-01

Advances in the chemical vapor deposition (CVD) growth of graphene have made this material a very attractive candidate for a number of applications including transparent conductors, electronics, optoeletronics, biomedical devices and energy storage. The CVD method requires transfer of graphene on a desired substrate and this is most commonly accomplished with polymers. The removal of polymer carriers is achieved with organic solvents or thermal treatment which makes this approach inappropriate for application to plastic thin films such as polyethylene terephthalate substrates. An ultraclean graphene transfer method under mild conditions is highly desired. In this article, we report a naphthalene-assisted graphene transfer technique which provides a reliable route to residue-free transfer of graphene to both hard and flexible substrates. The quality of the transferred graphene was characterized with atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. Field effect transistors, based on the naphthalene-transfered graphene, were fabricated and characterized. This work has the potential to broaden the applications of CVD graphene in fields where ultraclean graphene and mild graphene transfer conditions are required.

Three-dimensional strutted graphene grown by substrate-free sugar blowing for high-power-density supercapacitors

Science.gov (United States)

Wang, Xuebin; Zhang, Yuanjian; Zhi, Chunyi; Wang, Xi; Tang, Daiming; Xu, Yibin; Weng, Qunhong; Jiang, Xiangfen; Mitome, Masanori; Golberg, Dmitri; Bando, Yoshio

2013-12-01

Three-dimensional graphene architectures in the macroworld can in principle maintain all the extraordinary nanoscale properties of individual graphene flakes. However, current 3D graphene products suffer from poor electrical conductivity, low surface area and insufficient mechanical strength/elasticity; the interconnected self-supported reproducible 3D graphenes remain unavailable. Here we report a sugar-blowing approach based on a polymeric predecessor to synthesize a 3D graphene bubble network. The bubble network consists of mono- or few-layered graphitic membranes that are tightly glued, rigidly fixed and spatially scaffolded by micrometre-scale graphitic struts. Such a topological configuration provides intimate structural interconnectivities, freeway for electron/phonon transports, huge accessible surface area, as well as robust mechanical properties. The graphene network thus overcomes the drawbacks of presently available 3D graphene products and opens up a wide horizon for diverse practical usages, for example, high-power high-energy electrochemical capacitors, as highlighted in this work.

Three-dimensional strutted graphene grown by substrate-free sugar blowing for high-power-density supercapacitors

Science.gov (United States)

Wang, Xuebin; Zhang, Yuanjian; Zhi, Chunyi; Wang, Xi; Tang, Daiming; Xu, Yibin; Weng, Qunhong; Jiang, Xiangfen; Mitome, Masanori; Golberg, Dmitri; Bando, Yoshio

2013-01-01

Three-dimensional graphene architectures in the macroworld can in principle maintain all the extraordinary nanoscale properties of individual graphene flakes. However, current 3D graphene products suffer from poor electrical conductivity, low surface area and insufficient mechanical strength/elasticity; the interconnected self-supported reproducible 3D graphenes remain unavailable. Here we report a sugar-blowing approach based on a polymeric predecessor to synthesize a 3D graphene bubble network. The bubble network consists of mono- or few-layered graphitic membranes that are tightly glued, rigidly fixed and spatially scaffolded by micrometre-scale graphitic struts. Such a topological configuration provides intimate structural interconnectivities, freeway for electron/phonon transports, huge accessible surface area, as well as robust mechanical properties. The graphene network thus overcomes the drawbacks of presently available 3D graphene products and opens up a wide horizon for diverse practical usages, for example, high-power high-energy electrochemical capacitors, as highlighted in this work. PMID:24336225

Binder-free highly conductive graphene laminate for low cost printed radio frequency applications

Energy Technology Data Exchange (ETDEWEB)

Huang, Xianjun; Leng, Ting; Zhang, Xiao; Hu, Zhirun, E-mail: Z.Hu@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester (United Kingdom); Chen, Jia Cing; Chang, Kuo Hsin [BGT Materials Limited, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Geim, Andre K. [Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester (United Kingdom); Novoselov, Kostya S. [School of Physics and Astronomy, University of Manchester, Manchester (United Kingdom)

2015-05-18

In this paper, we demonstrate realization of printable radio frequency identification (RFID) antenna by low temperature processing of graphene ink. The required ultra-low resistance is achieved by rolling compression of binder-free graphene laminate. With compression, the conductivity of graphene laminate is increased by more than 50 times compared to that of as-deposited one. Graphene laminate with conductivity of 4.3 × 10{sup 4 }S/m and sheet resistance of 3.8 Ω/sq (with thickness of 6 μm) is presented. Moreover, the formation of graphene laminate from graphene ink reported here is simple and can be carried out in low temperature (100 °C), significantly reducing the fabrication costs. A dipole antenna based on the highly conductive graphene laminate is further patterned and printed on a normal paper to investigate its RF properties. The performance of the graphene laminate antenna is experimentally measured. The measurement results reveal that graphene laminate antenna can provide practically acceptable return loss, gain, bandwidth, and radiation patterns, making it ideal for low cost printed RF applications, such as RFID tags and wearable wireless sensor networks.

Binder-free highly conductive graphene laminate for low cost printed radio frequency applications

International Nuclear Information System (INIS)

Huang, Xianjun; Leng, Ting; Zhang, Xiao; Hu, Zhirun; Chen, Jia Cing; Chang, Kuo Hsin; Geim, Andre K.; Novoselov, Kostya S.

2015-01-01

In this paper, we demonstrate realization of printable radio frequency identification (RFID) antenna by low temperature processing of graphene ink. The required ultra-low resistance is achieved by rolling compression of binder-free graphene laminate. With compression, the conductivity of graphene laminate is increased by more than 50 times compared to that of as-deposited one. Graphene laminate with conductivity of 4.3 × 10 4  S/m and sheet resistance of 3.8 Ω/sq (with thickness of 6 μm) is presented. Moreover, the formation of graphene laminate from graphene ink reported here is simple and can be carried out in low temperature (100 °C), significantly reducing the fabrication costs. A dipole antenna based on the highly conductive graphene laminate is further patterned and printed on a normal paper to investigate its RF properties. The performance of the graphene laminate antenna is experimentally measured. The measurement results reveal that graphene laminate antenna can provide practically acceptable return loss, gain, bandwidth, and radiation patterns, making it ideal for low cost printed RF applications, such as RFID tags and wearable wireless sensor networks

A three-dimensional nitrogen-doped graphene structure: a highly efficient carrier of enzymes for biosensors

Science.gov (United States)

Guo, Jingxing; Zhang, Tao; Hu, Chengguo; Fu, Lei

2015-01-01

In recent years, graphene-based enzyme biosensors have received considerable attention due to their excellent performance. Enormous efforts have been made to utilize graphene oxide and its derivatives as carriers of enzymes for biosensing. However, the performance of these sensors is limited by the drawbacks of graphene oxide such as slow electron transfer rate, low catalytic area and poor conductivity. Here, we report a new graphene-based enzyme carrier, i.e. a highly conductive 3D nitrogen-doped graphene structure (3D-NG) grown by chemical vapour deposition, for highly effective enzyme-based biosensors. Owing to the high conductivity, large porosity and tunable nitrogen-doping ratio, this kind of graphene framework shows outstanding electrical properties and a large surface area for enzyme loading and biocatalytic reactions. Using glucose oxidase (GOx) as a model enzyme and chitosan (CS) as an efficient molecular binder of the enzyme, our 3D-NG based biosensors show extremely high sensitivity for the sensing of glucose (226.24 μA mM-1 m-2), which is almost an order of magnitude higher than those reported in most of the previous studies. The stable adsorption and outstanding direct electrochemical behaviour of the enzyme on the nanocomposite indicate the promising application of this 3D enzyme carrier in high-performance electrochemical biosensors or biofuel cells.In recent years, graphene-based enzyme biosensors have received considerable attention due to their excellent performance. Enormous efforts have been made to utilize graphene oxide and its derivatives as carriers of enzymes for biosensing. However, the performance of these sensors is limited by the drawbacks of graphene oxide such as slow electron transfer rate, low catalytic area and poor conductivity. Here, we report a new graphene-based enzyme carrier, i.e. a highly conductive 3D nitrogen-doped graphene structure (3D-NG) grown by chemical vapour deposition, for highly effective enzyme

Nano-scaled graphene platelets with a high length-to-width aspect ratio

Science.gov (United States)

Zhamu, Aruna; Guo, Jiusheng; Jang, Bor Z.

2010-09-07

This invention provides a nano-scaled graphene platelet (NGP) having a thickness no greater than 100 nm and a length-to-width ratio no less than 3 (preferably greater than 10). The NGP with a high length-to-width ratio can be prepared by using a method comprising (a) intercalating a carbon fiber or graphite fiber with an intercalate to form an intercalated fiber; (b) exfoliating the intercalated fiber to obtain an exfoliated fiber comprising graphene sheets or flakes; and (c) separating the graphene sheets or flakes to obtain nano-scaled graphene platelets. The invention also provides a nanocomposite material comprising an NGP with a high length-to-width ratio. Such a nanocomposite can become electrically conductive with a small weight fraction of NGPs. Conductive composites are particularly useful for shielding of sensitive electronic equipment against electromagnetic interference (EMI) or radio frequency interference (RFI), and for electrostatic charge dissipation.

Graphene Electrodes

DEFF Research Database (Denmark)

Pizzocchero, Filippo

The production of graphene and the other 2D materials is presented in the beginning of this thesis. Micromechanical exfoliation is the best method for obtaining relatively small and top quality samples. The invention of Graphene Finder simplifies the procedure of finding the exfoliated flakes...... in copper thin films is studied and found to be detrimental for the growth of graphene. The modified synthesis of rGO is introduced, as rGO represents a cheap alternative to CVD for large scale production of graphene. The transfer of flakes is performed by several methods, such as with PVA/PMMA support, CAB...... wedging and the pick-up technique with hBN. Several important improvements of the pick-up technique are introduced. These allowed us to transfer any 2D crystals and patterned graphene flakes with PMMA residues. We also developed the drop-down technique, which is used to release any crystal on the surface...

Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Dangwal Pandey, A., E-mail: arti.pandey@desy.de; Grånäs, E.; Shayduk, R.; Noei, H.; Vonk, V. [Deutsches Elektronen-Synchrotron (DESY), D-22607 Hamburg (Germany); Krausert, K.; Franz, D.; Müller, P.; Keller, T. F.; Stierle, A., E-mail: andreas.stierle@desy.de [Deutsches Elektronen-Synchrotron (DESY), D-22607 Hamburg (Germany); Fachbereich Physik, Universität Hamburg, D-22607 Hamburg (Germany)

2016-08-21

Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

Large-scale modulation of left-handed passband in hybrid graphene/dielectric metasurface

Energy Technology Data Exchange (ETDEWEB)

Liu, Chuanbao; Bai, Yang; Qiao, Lijie [Key Laboratory of Environmental Fracture (Ministry of Education), University of Science and Technology Beijing (China); Zhou, Ji [State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing (China); Zhao, Qian [State Kay Laboratory of Tribology, Department of Mechanical Engineering, Tsinghua University, Beijing (China)

2017-08-15

Large-scale modulation of the left-handed transmission with a high quality factor is greatly desired by high-performance optical devices, but the requirements are hard to be satisfied simultaneously. This paper presents a hybrid graphene/dielectric metasurface to realize a large transmission modulation for the left-handed passband at near-infrared frequencies via tuning the Fermi energy of graphene. By splitting the nanoblocks, i.e. introducing an additional symmetry breaking in the unit cell, the metasurface demonstrates an ultrahigh quality factor (Q ∼ 550) of Fano resonance with near-unity transmission and full 2π phase coverage due to the interference between Mie-type magnetic and electric resonances, which induces the negative refraction property. Besides, the split in the nanoblock greatly enhances the local field by increasing the critical coupling area, so the light-graphene interaction is promoted intensively. When the surface conductivity of graphene is electrically tuned, the hybrid graphene/dielectric metasurface exhibits a deep modulation of 85% for the left-handed passband, which is robust even for the highest loss of graphene. Moreover, the simple configuration remarkably reduces the fabrication requirements to facilitate the widespread applications. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

KAUST Repository

Chen, Wei; Fan, Zhongli; Zeng, Gaofeng; Lai, Zhiping

2013-01-01

High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found

Understanding the reaction kinetics to optimize graphene growth on Cu by chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Kraus, Juergen; Boebel, Lena; Zwaschka, Gregor; Guenther, Sebastian [Technische Universitaet Muenchen, Zentralinstitut fuer Katalyseforschung, Chemie Department, Physikalische Chemie mit Schwerpunkt Katalyse, Garching (Germany)

2017-11-15

Understanding and controlling the growth kinetics of graphene is a prerequisite to synthesize this highly wanted material by chemical vapor deposition on Cu, e.g. for the construction of ultra-stable electron transparent membranes. It is reviewed that Cu foils contain a considerable amount of carbon in the bulk which significantly exceeds the expected amount of thermally equilibrated dissolved carbon in Cu and that this carbon must be removed before any high quality graphene may be grown. Starting with such conditioned Cu foils, systematic studies of the graphene growth kinetics in a reactive CH{sub 4}/H{sub 2} atmosphere allow to extract the following meaningful data: prediction of the equilibrium constant of the graphene formation reaction within a precision of a factor of two, the confirmation that the graphene growth proceeds from a C(ad)-phase on Cu which is in thermal equilibrium with the reactive gas phase, its apparent activation barrier and finally the prediction of the achievable growth velocity of the growing graphene flakes during chemical vapor deposition. As a result of the performed study, growth parameters are identified for the synthesis of high quality monolayer graphene with single crystalline domains of 100-1000 μm in diameter within a reasonable growth time. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electron Interference in Ballistic Graphene Nanoconstrictions

DEFF Research Database (Denmark)

Baringhaus, Jens; Settnes, Mikkel; Aprojanz, Johannes

2016-01-01

We realize nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The transmissions of Fabry-Perot-like resonances are probed...

Application of graphene for preconcentration and highly sensitive stripping voltammetric analysis of organophosphate pesticide

Energy Technology Data Exchange (ETDEWEB)

Wu Shuo, E-mail: wushuo@dlut.edu.cn [School of Chemistry, Dalian University of Technology, Dalian 116023 (China); Lan Xiaoqin; Cui Lijun; Zhang Lihui; Tao Shengyang; Wang Hainan; Han Mei; Liu Zhiguang; Meng Changgong [School of Chemistry, Dalian University of Technology, Dalian 116023 (China)

2011-08-12

Highlights: {yields} An electrochemical sensor is fabricated based on {beta}-CD dispersed graphene. {yields} The sensor could selectively detect organophosphate pesticide with high sensitivity. {yields} The {beta}-CD dispersed graphene owns large adsorption capacity for MP and superconductivity. {yields} The {beta}-CD dispersed graphene is superior to most of the porous sorbents ever known. - Abstract: Electrochemical reduced {beta}-cyclodextrin dispersed graphene ({beta}-CD-graphene) was developed as a sorbent for the preconcentration and electrochemical sensing of methyl parathion (MP), a representative nitroaromatic organophosphate pesticide with good redox activity. Benefited from the ultra-large surface area, large delocalized {pi}-electron system and the superconductivity of {beta}-CD-graphene, large amount of MP could be extracted on {beta}-CD-graphene modified electrode via strong {pi}-{pi} interaction and exhibited fast accumulation and electron transfer rate. Combined with differential pulse voltammetric analysis, the sensor shows ultra-high sensitivity, good selectivity and fast response. The limit of detection of 0.05 ppb is more than 10 times lower than those obtained from other sorbent based sensors. The method may open up a new possibility for the widespread use of electrochemical sensors for monitoring of ultra-trace OPs.

High Gain Hybrid Graphene-Organic Semiconductor Phototransistors

NARCIS (Netherlands)

Huisman, Everardus H.; Shulga, Artem G.; Zomer, Paul J.; Tombros, Nikolaos; Bartesaghi, Davide; Bisri, Satria Zulkarnaen; Loi, Maria A.; Koster, L. Jan Anton; van Wees, Bart J.

2015-01-01

Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a

Solvent evaporation induced graphene powder with high volumetric capacitance and outstanding rate capability for supercapacitors

Science.gov (United States)

Zhang, Xiaozhe; Raj, Devaraj Vasanth; Zhou, Xufeng; Liu, Zhaoping

2018-04-01

Graphene-based electrode materials for supercapacitors usually suffer from poor volumetric performance due to the low density. The enhancement of volumetric capacitance by densification of graphene materials, however, is usually accompanied by deterioration of rate capability, as the huge contraction of pore size hinders rapid diffusion of electrolytes. Thus, it is important to develop suitable pore size in graphene materials, which can sustain fast ion diffusion and avoid excessive voids to acquire high density simultaneously for supercapacitor applications. Accordingly, we propose a simple solvent evaporation method to control the pore size of graphene powders by adjusting the surface tension of solvents. Ethanol is used instead of water to reduce the shrinkage degree of graphene powder during solvent evaporation process, due to its lower surface tension comparing with water. Followed by the assistance of mechanical compression, graphene powder having high compaction density of 1.30 g cm-3 and a large proportion of mesopores in the pore size range of 2-30 nm is obtained, which delivers high volumetric capacitance of 162 F cm-3 and exhibits outstanding rate performance of 76% capacity retention at a high current density of 100 A g-1 simultaneously.

Toward High Carrier Mobility and Low Contact Resistance:Laser Cleaning of PMMA Residues on Graphene Surfaces

Institute of Scientific and Technical Information of China (English)

Yuehui Jia; Xin Gong; Pei Peng; Zidong Wang; Zhongzheng Tian; Liming Ren; Yunyi Fu; Han Zhang

2016-01-01

Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device fabrication.However,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of device performance.How to eliminate contamination and restore clean surfaces of graphene is still highly demanded.In this paper,we present a reliable and position-controllable method to remove the polymer residues on graphene films by laser exposure.Under proper laser conditions,PMMA residues can be substantially reduced without introducing defects to the underlying graphene.Furthermore,by applying this laser cleaning technique to the channel and contacts of graphene fieldeffect transistors(GFETs),higher carrier mobility as well as lower contact resistance can be realized.This work opens a way for probing intrinsic properties of contaminant-free graphene and fabricating high-performance GFETs with both clean channel and intimate graphene/metal contact.

Oxidation-assisted graphene heteroepitaxy on copper foil.

Science.gov (United States)

Reckinger, Nicolas; Tang, Xiaohui; Joucken, Frédéric; Lajaunie, Luc; Arenal, Raul; Dubois, Emmanuel; Hackens, Benoît; Henrard, Luc; Colomer, Jean-François

2016-11-10

We propose an innovative, easy-to-implement approach to synthesize aligned large-area single-crystalline graphene flakes by chemical vapor deposition on copper foil. This method doubly takes advantage of residual oxygen present in the gas phase. First, by slightly oxidizing the copper surface, we induce grain boundary pinning in copper and, in consequence, the freezing of the thermal recrystallization process. Subsequent reduction of copper under hydrogen suddenly unlocks the delayed reconstruction, favoring the growth of centimeter-sized copper (111) grains through the mechanism of abnormal grain growth. Second, the oxidation of the copper surface also drastically reduces the nucleation density of graphene. This oxidation/reduction sequence leads to the synthesis of aligned millimeter-sized monolayer graphene domains in epitaxial registry with copper (111). The as-grown graphene flakes are demonstrated to be both single-crystalline and of high quality.

Removal of high concentration p-nitrophenol in aqueous solution by zero valent iron with ultrasonic irradiation (US–ZVI)

International Nuclear Information System (INIS)

Lai, Bo; Chen, Zhaoyu; Zhou, Yuexi; Yang, Ping; Wang, Juling; Chen, Zhiqiang

2013-01-01

Highlights: ► High concentration PNP can be reduced into the nontoxic p-aminophenol by US–ZVI. ► High removal efficiency of PNP is resulted from the synergistic reaction of ZVI and US. ► The reaction pathway of PNP in the US–ZVI system is proposed. ► Processing parameters of the US–ZVI system were optimized seriously. -- Abstract: In this study, the US–ZVI system was used to produce the strong reductants including ·H and nascent Fe 2+ ions to eliminate the toxicity of the high concentration p-nitrophenol (PNP) wastewater. The effect of the reactor structure, initial pH, ZVI dosage, ultrasonic power and initial PNP concentration on the removal efficiency of PNP from water was investigated intensively. The results show that a higher removal rate can be obtained by using a conical structure reactor, and the lower initial pH can aid the acceleration of PNP removal rate by using US–ZVI system. Furthermore, the removal efficiencies of PNP increased obviously with the increase of initial ZVI concentration from 0 to 15 g L −1 . Also, the treatment capacity of ZVI was enhanced remarkably by the ultrasonic irradiation, and the US–ZVI system can maintain high treatment efficiency for the high concentration PNP wastewater (500–10,000 mg L −1 ). Meanwhile, the high removal efficiency of PNP was mainly resulted from the synergistic reaction of ZVI and US. At last, the main degradation product (i.e., p-aminophenol) was detected by gas chromatography–mass spectrum (GC–MS). Thus, the reaction pathway of PNP in the US–ZVI system is proposed as a reducing process by the ·H and nascent Fe 2+ ions

Removal of high concentration p-nitrophenol in aqueous solution by zero valent iron with ultrasonic irradiation (US–ZVI)

Energy Technology Data Exchange (ETDEWEB)

Lai, Bo, E-mail: laibo1981@163.com [School of Architecture and Environment, Sichuan University, Chengdu 610065 (China); Chen, Zhaoyu [School of Architecture and Environment, Sichuan University, Chengdu 610065 (China); Zhou, Yuexi [Research Center of Water Pollution Control Technology, Chinese Research Academy of Environmental Sciences, Beijing 100012 (China); Yang, Ping [School of Architecture and Environment, Sichuan University, Chengdu 610065 (China); Wang, Juling [Research Center of Water Pollution Control Technology, Chinese Research Academy of Environmental Sciences, Beijing 100012 (China); Chen, Zhiqiang [State Key Laboratory of Urban Water Resource and Environment, Harbin Institute of Technology, Harbin 150090 (China)

2013-04-15

Highlights: ► High concentration PNP can be reduced into the nontoxic p-aminophenol by US–ZVI. ► High removal efficiency of PNP is resulted from the synergistic reaction of ZVI and US. ► The reaction pathway of PNP in the US–ZVI system is proposed. ► Processing parameters of the US–ZVI system were optimized seriously. -- Abstract: In this study, the US–ZVI system was used to produce the strong reductants including ·H and nascent Fe{sup 2+} ions to eliminate the toxicity of the high concentration p-nitrophenol (PNP) wastewater. The effect of the reactor structure, initial pH, ZVI dosage, ultrasonic power and initial PNP concentration on the removal efficiency of PNP from water was investigated intensively. The results show that a higher removal rate can be obtained by using a conical structure reactor, and the lower initial pH can aid the acceleration of PNP removal rate by using US–ZVI system. Furthermore, the removal efficiencies of PNP increased obviously with the increase of initial ZVI concentration from 0 to 15 g L{sup −1}. Also, the treatment capacity of ZVI was enhanced remarkably by the ultrasonic irradiation, and the US–ZVI system can maintain high treatment efficiency for the high concentration PNP wastewater (500–10,000 mg L{sup −1}). Meanwhile, the high removal efficiency of PNP was mainly resulted from the synergistic reaction of ZVI and US. At last, the main degradation product (i.e., p-aminophenol) was detected by gas chromatography–mass spectrum (GC–MS). Thus, the reaction pathway of PNP in the US–ZVI system is proposed as a reducing process by the ·H and nascent Fe{sup 2+} ions.

Contamination-Free Graphene Transfer from Cu-Foil and Cu-Thin-Film/Sapphire

Directory of Open Access Journals (Sweden)

Jaeyeong Lee

2017-12-01

Full Text Available The separation of graphene grown on metallic catalyst by chemical vapor deposition (CVD is essential for device applications. The transfer techniques of graphene from metallic catalyst to target substrate usually use the chemical etching method to dissolve the metallic catalyst. However, this causes not only high material cost but also environmental contamination in large-scale fabrication. We report a bubble transfer method to transfer graphene films to arbitrary substrate, which is nondestructive to both the graphene and the metallic catalyst. In addition, we report a type of metallic catalyst, which is 700 nm of Cu on sapphire substrate, which is hard enough to endure against any procedure in graphene growth and transfer. With the Cr adhesion layer between sapphire and Cu film, electrochemically delaminated graphene shows great quality during several growth cycles. The electrochemical bubble transfer method can offer high cost efficiency, little contamination and environmental advantages.

Free-Standing Hybrid Graphene Paper Encapsulating Nanostructures for High Cycle-Life Supercapacitors.

Science.gov (United States)

Jiao, Xinyan; Hao, Qingli; Xia, Xifeng; Lei, Wu; Ouyang, Yu; Ye, Haitao; Mandler, Daniel

2018-03-09

The incorporation of spacers between graphene sheets has been investigated as an effective method to improve the electrochemical performance of graphene papers (GPs) for supercapacitors. Here, we report the design of free-standing GP@NiO and GP@Ni hybrid GPs in which NiO nanoclusters and Ni nanoparticles are encapsulated into graphene sheets through electrostatic assembly and subsequent vacuum filtration. The encapsulated NiO nanoclusters and Ni nanoparticles can mitigate the restacking of graphene sheets, providing sufficient spaces for high-speed ion diffusion and electron transport. In addition, the spacers strongly bind to graphene sheets, which can efficiently improve the electrochemical stability. Therefore, at a current density of 0.5 A g -1 , the GP@NiO and GP@Ni electrodes exhibit higher specific capacitances of 306.9 and 246.1 F g -1 than the GP electrode (185.7 F g -1 ). The GP@NiO and GP@Ni electrodes exhibit capacitance retention of 98.7 % and 95.6 % after 10000 cycles, demonstrating an outstanding cycling stability. Additionally, the GP@NiO∥GP@Ni delivers excellent cycling stability (93.7 % after 10 000 cycles) and high energy density. These free-standing encapsulated hybrid GPs have great potential as electrode for high-performance supercapacitors. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A novel synthesis of graphene nanoscrolls with tunable dimension at a large scale

International Nuclear Information System (INIS)

Chen Xuli; Li Li; Sun Xuemei; Peng Huisheng; Kia, Hamid G

2012-01-01

Graphene nanoscrolls which could overcome the chirality dependence of metallic or semiconducting behavior in carbon nanotubes have been recently investigated and proposed for a wide variety of applications. In order to further improve their practical applications, a variety of synthetic approaches have been widely explored but with various limitations. For instance, it remains challenging to produce graphene nanoscrolls with tunable dimensions and high quantity, which greatly hinders their potential applications. Herein, we report a new and general approach to synthesize graphene nanoscrolls with accurately tunable widths and lengths at a large scale. The resulting high-quality graphene nanoscrolls show promising applications in a wide variety of electronic devices. (paper)

Supraparamagnetic, conductive, and processable multifunctional graphene nanosheets coated with high-density Fe3O4 nanoparticles.

Science.gov (United States)

He, Hongkun; Gao, Chao

2010-11-01

The amazing properties of graphene are triggering extensive interests of both scientists and engineers, whereas how to fully utilize the unique attributes of graphene to construct novel graphene-based composites with tailor-made, integrated functions remains to be a challenge. Here, we report a facile approach to multifunctional iron oxide nanoparticle-attached graphene nanosheets (graphene@Fe(3)O(4)) which show the integrated properties of strong supraparamagnetism, electrical conductivity, highly chemical reactivity, good solubility, and excellent processability. The synthesis method is efficient, scalable, green, and controllable and has the feature of reduction of graphene oxide and formation of Fe(3)O(4) nanoparticles in one step. When the feed ratios are adjusted, the average diameter of Fe(3)O(4) nanoparticles (1.2-6.3 nm), the coverage density of Fe(3)O(4) nanoparticles on graphene nanosheets (5.3-57.9%), and the saturated magnetization of graphene@Fe(3)O(4) (0.5-44.1 emu/g) can be controlled readily. Because of the good solubility of the as-prepared graphene@Fe(3)O(4), highly flexible and multifunctional films composed of polyurethane and a high content of graphene@Fe(3)O(4) (up to 60 wt %) were fabricated by the solution-processing technique. The graphene@Fe(3)O(4) hybrid sheets showed electrical conductivity of 0.7 S/m and can be aligned into a layered-stacking pattern in an external magnetic field. The versatile graphene@Fe(3)O(4) nanosheets hold great promise in a wide range of fields, including magnetic resonance imaging, electromagnetic interference shielding, microwave absorbing, and so forth.

3D nanoporous graphene films converted from liquid-crystalline holey graphene oxide for thin and high-performance supercapacitors

Science.gov (United States)

Wang, Bin; Liu, Jinzhang; Zhao, Yi; Zheng, Dezhi; Li, Yan; Sha, Jiangbo

2018-01-01

Holey graphene oxide (HGO) is prepared and its liquid crystal (LC) formation in water is investigated. The blade-coated LC-HGO hydrogel is hydrothermally reduced to form 3D nanoporous films used as supercapacitor electrodes. Holey graphene sheets are rumpled and interconnected to form a cellular structure with pore size around 100 nm during the reduction process. Reduced HGO films with different thicknesses are integrated into solid-state symmetric supercapacitors and their electrochemical performances are studied. High specific capacitance up to 304 F g-1 and high volumetric capacitance around 400 F cm-3 are achieved from our thin and flexible devices.

Self-assembled high-strength hydroxyapatite/graphene oxide/chitosan composite hydrogel for bone tissue engineering.

Science.gov (United States)

Yu, Peng; Bao, Rui-Ying; Shi, Xiao-Jun; Yang, Wei; Yang, Ming-Bo

2017-01-02

Graphene hydrogel has shown greatly potentials in bone tissue engineering recently, but it is relatively weak in the practical use. Here we report a facile method to synthesize high strength composite graphene hydrogel. Graphene oxide (GO), hydroxyapatite (HA) nanoparticles (NPs) and chitosan (CS) self-assemble into a 3-dimensional hydrogel with the assistance of crosslinking agent genipin (GNP) for CS and reducing agent sodium ascorbate (NaVC) for GO simultaneously. The dense and oriented microstructure of the resulted composite gel endows it with high mechanical strength, high fixing capacity of HA and high porosity. These properties together with the good biocompatibility make the ternary composite gel a promising material for bone tissue engineering. Such a simultaneous crosslinking and reduction strategy can also be applied to produce a variety of 3D graphene-polymer based nanocomposites for biomaterials, energy storage materials and adsorbent materials. Copyright © 2016 Elsevier Ltd. All rights reserved.

AS3MT, GSTO, and PNP polymorphisms: impact on arsenic methylation and implications for disease susceptibility.

Science.gov (United States)

Antonelli, Ray; Shao, Kan; Thomas, David J; Sams, Reeder; Cowden, John

2014-07-01

Oral exposure to inorganic arsenic (iAs) is associated with adverse health effects. Epidemiological studies suggest differences in susceptibility to these health effects, possibly due to genotypic variation. Genetic polymorphisms in iAs metabolism could lead to increased susceptibility by altering urinary iAs metabolite concentrations. To examine the impact of genotypic polymorphisms on iAs metabolism. We screened 360 publications from PubMed and Web of Science for data on urinary mono- and dimethylated arsenic (MMA and DMA) percentages and polymorphic genes encoding proteins that are hypothesized to play roles in arsenic metabolism. The genes we examined were arsenic (+3) methyltransferase (AS3MT), glutathione-s-transferase omega (GSTO), and purine nucleoside phosphorylase (PNP). Relevant data were pooled to determine which polymorphisms are associated across studies with changes in urinary metabolite concentration. In our review, AS3MT polymorphisms rs3740390, rs11191439, and rs11191453 were associated with statistically significant changes in percent urinary MMA. Studies of GSTO polymorphisms did not indicate statistically significant associations with methylation, and there are insufficient data on PNP polymorphisms to evaluate their impact on metabolism. Collectively, these data support the hypothesis that AS3MT polymorphisms alter in vivo metabolite concentrations. Preliminary evidence suggests that AS3MT genetic polymorphisms may impact disease susceptibility. GSTO polymorphisms were not associated with iAs-associated health outcomes. Additional data are needed to evaluate the association between PNP polymorphisms and iAs-associated health outcomes. Delineation of these relationships may inform iAs mode(s) of action and the approach for evaluating low-dose health effects for iAs. Genotype impacts urinary iAs metabolite concentrations and may be a potential mechanism for iAs-related disease susceptibility. Published by Elsevier Inc.

Hall effect biosensors with ultraclean graphene film for improved sensitivity of label-free DNA detection

KAUST Repository

Loan, Phan Thi Kim; Wu, Dongqin; Ye, Chen; Li, Xiaoqing; Tra, Vu Thanh; Wei, Qiuping; Fu, Li; Yu, Aimin; Li, Lain-Jong; Lin, Cheng-Te

2017-01-01

The quality of graphene strongly affects the performance of graphene-based biosensors which are highly demanded for the sensitive and selective detection of biomolecules, such as DNA. This work reported a novel transfer process for preparing a

Transfer-free electrical insulation of epitaxial graphene from its metal substrate.

Science.gov (United States)

Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo; Dalmiglio, Matteo; Orlando, Fabrizio; Baraldi, Alessandro; Gammelgaard, Lauge; Barreto, Lucas; Bianchi, Marco; Perkins, Edward; Hofmann, Philip

2012-09-12

High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen, and the eventual formation of a SiO(2) layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique.

Transfer-Free Electrical Insulation of Epitaxial Graphene from its Metal Substrate

DEFF Research Database (Denmark)

Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo

2012-01-01

High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen......, and the eventual formation of a SiO2 layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique....

Graphene/MnO{sub 2} hybrid nanosheets as high performance electrode materials for supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Mondal, Anjon Kumar, E-mail: Anjon.K.Mondal@student.uts.edu.au [Centre for Clean Energy Technology, School of Chemistry and Forensic Science, University of Technology, Sydney, Broadway, Sydney, NSW 2007 (Australia); Wang, Bei; Su, Dawei; Wang, Ying; Chen, Shuangqiang [Centre for Clean Energy Technology, School of Chemistry and Forensic Science, University of Technology, Sydney, Broadway, Sydney, NSW 2007 (Australia); Zhang, Xiaogang [College of Materials Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing (China); Wang, Guoxiu, E-mail: Guoxiu.wang@uts.edu.au [Centre for Clean Energy Technology, School of Chemistry and Forensic Science, University of Technology, Sydney, Broadway, Sydney, NSW 2007 (Australia)

2014-01-15

Graphene/MnO{sub 2} hybrid nanosheets were prepared by incorporating graphene and MnO{sub 2} nanosheets in ethylene glycol. Scanning electron microscopy and transmission electron microscopy analyses confirmed nanosheet morphology of the hybrid materials. Graphene/MnO{sub 2} hybrid nanosheets with different ratios were investigated as electrode materials for supercapacitors by cyclic voltammetry (CV) and galvanostatic charge–discharge in 1 M Na{sub 2}SO{sub 4} electrolyte. We found that the graphene/MnO{sub 2} hybrid nanosheets with a weight ratio of 1:4 (graphene:MnO{sub 2}) delivered the highest specific capacitance of 320 F g{sup −1}. Graphene/MnO{sub 2} hybrid nanosheets also exhibited good capacitance retention on 2000 cycles. - Highlights: • Graphene/MnO{sub 2} hybrid nanosheets with different ratios were fabricated. • The specific capacitance is strongly dependent on graphene/MnO{sub 2} ratios. • The graphene/MnO{sub 2} hybrid electrode (1:4) exhibited high specific capacitance. • The electrode retained 84% of the initial specific capacitance after 2000 cycles.

A novel high-performance supercapacitor based on high-quality CeO2/nitrogen-doped reduced graphene oxide nanocomposite

Science.gov (United States)

Heydari, Hamid; Gholivand, Mohammad Bagher

2017-03-01

In this work, we have developed a novel nanocomposite via deposition of ceria (CeO2) on nitrogen-doped reduced graphene (CeO2/NRGO). NRGO was synthesized through a facile, safe, and scalable method to achieve simultaneous thermal reduction along with nitrogen doping of graphene oxide (GO) in air at much lower reaction temperature. CeO2/NRGO was prepared via a sonochemical method in which ceria nanoparticles were uniformly distributed on NRGO sheets. The structure and morphology of CeO2/NRGO nanocomposites were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FT-IR), and Raman spectroscopy. Electrochemical properties of the proposed nanocomposite electrodes were investigated by cyclic voltammetry (CV), galvanostatic charge/discharge, continuous cyclic voltammetry (CCV), and electrochemical impedance spectroscopy (EIS) measurements. CeO2-NRGO nanocomposite electrodes showed excellent supercapacitive behavior, including much higher specific capacitance (230 F g-1 at 2 mV s-1) and higher rate capability compared to pure N-graphene. The cycling stability of the electrodes was measured by continues cyclic voltammetry (CCV) technique. The CCV showed that the specific capacitance of the CeO2/NRGO and NRGO nanocomposite maintained at 94.1 and 93.2% after 4000 cycles. The results suggest its promising potential as efficient electrode material for supercapacitors.

The impact of hydrogen and oxidizing impurities in chemical vapor deposition of graphene on copper

Science.gov (United States)

Choubak, Saman

Graphene, the single-atom layer of carbon, has attracted scientists and technologists due to its outstanding physical and opto/electronic properties. The use of graphene in practical applications requires a reliable and cost-effective method to produce large area graphene films with low defects and controlled thicknesses. Direct growth of graphene using chemical vapor deposition (CVD) on copper, in which carbonaceous gaseous species react with the metal substrate in the presence of hydrogen at high temperatures (850-1100° C), led to high coverage of high quality graphene, opening up a promising future for methods of this type and a large step towards commercial realization of graphene products. The present thesis deals with the synthesis of graphene via low pressure CVD (LP-CVD) on copper catalyst using methane as the carbon precursor. The focus is mainly on the determination of the role of hydrogen and oxidizing impurities during graphene formation with an ultimate purpose: to elucidate a viable and reproducible method for the production of high quality graphene films compatible with industrial manufacturing processes. The role of molecular hydrogen in graphene CVD is explored in the first part of the thesis. Few studies claimed that molecular hydrogen etches graphene films on copper by conducting annealing experiments. On the other hand, we speculated that this graphene etching reaction is due to the presence of trace amount of oxygen in the furnace atmosphere. Thus, we took another approach and designed systematic annealing experiments to investigate the role of hydrogen in the etching reaction of graphene on copper foils. No evidence of graphene etching on copper was observed when purified ultra high purity (UHP) hydrogen was used at 825 °C and 500 mTorr. Nevertheless, graphene films exposed to the unpurified UHP hydrogen were etched due to the presence of oxidizing impurities. Our results show that hydrogen is not responsible for graphene etching reaction

Engineering Graphene Films from Coal

Science.gov (United States)

Vijapur, Santosh H.

Graphene is a unique material with remarkable properties suitable for a wide array of applications. Chemical vapor deposition (CVD) is a simple technique for synthesis of large area and high quality graphene films on various metal substrates. Among the metal substrates, copper has been shown to be an excellent support for the growth of graphene films. Traditionally, hydrocarbon gases are used for the graphene synthesis via CVD. Unconventional solid carbon sources such as various polymers and food waste have also shown great potential for synthesis of graphene films. Coal is one such carbon enriched and abundantly available unconventional source. Utilization of coal as a carbon source to synthesize large area, transparent, and high quality few-layer graphene films via CVD has been demonstrated in the present work. Hydrocarbon gases are released as products of coal pyrolysis at temperatures ≥400 °C. This study hypothesized that, these hydrocarbon gases act as precursors for the synthesis of graphene films on the copper substrate. Hence, atmospheric pressure CVD and low temperature of 400 °C were utilized initially for the production of graphene films. These conditions were suitable for the formation of amorphous carbon (a-C) films but not crystalline graphene films that were the objective of this work. The synthesized a-C films on the copper substrate were shown to be uniform and transparent with large surface area. The thickness and surface roughness of the a-C films were determined to have typical values of 5 nm and 0.55 nm, respectively. The a-C film has >95 % optical transmittance and sheet resistivity of 0.6 MO sq-1. These values are comparable to other carbon thin films synthesized at higher temperatures. Further, the a-C films were transferred onto any type of substrate such as silicon wafer and titanium foil, and can be utilized for diverse applications. However, crystalline graphene films were not produced by implementing atmospheric pressure CVD and low

Microbial reduction of graphene oxide by Escherichia coli: a green chemistry approach.

Science.gov (United States)

Gurunathan, Sangiliyandi; Han, Jae Woong; Eppakayala, Vasuki; Kim, Jin-Hoi

2013-02-01

Graphene and graphene related materials are an important area of research in recent years due to their unique properties. The extensive industrial application of graphene and related compounds has led researchers to devise novel and simple methods for the synthesis of high quality graphene. In this paper, we developed an environment friendly, cost effective, simple method and green approaches for the reduction of graphene oxide (GO) using Escherichia coli biomass. In biological method, we can avoid use of toxic and environmentally harmful reducing agents commonly used in the chemical reduction of GO to obtain graphene. The biomass of E. coli reduces exfoliated GO to graphene at 37°C in an aqueous medium. The E. coli reduced graphene oxide (ERGO) was characterized with UV-visible absorption spectroscopy, particle analyzer, high resolution X-ray diffractometer, scanning electron microscopy and Raman spectroscopy. Besides the reduction potential, the biomass could also play an important role as stabilizing agent, in which synthesized graphene exhibited good stability in water. This method can open up the new avenue for preparing graphene in cost effective and large scale production. Our findings suggest that GO can be reduced by simple eco-friendly method by using E. coli biomass to produce water dispersible graphene. Copyright © 2012 Elsevier B.V. All rights reserved.

A manufacturable process integration approach for graphene devices

Science.gov (United States)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

Improved interface control for high-performance graphene-based organic solar cells

Science.gov (United States)

Jung, Seungon; Lee, Junghyun; Choi, Yunseong; Myeon Lee, Sang; Yang, Changduk; Park, Hyesung

2017-12-01

The demand for high-efficiency flexible optoelectronic devices is ever-increasing because next-generation electronic devices that comprise portable or wearable electronic systems are set to play an important role. Graphene has received extensive attention as it is considered to be a promising candidate material for transparent flexible electrode platforms owing to its outstanding electrical, optical, and physical properties. Despite these properties, the inert and hydrophobic nature of graphene surfaces renders it difficult to use in optoelectronic devices. In particular, commonly used charge transporting layer (CTL) materials for organic solar cells (OSCs) cannot uniformly coat a graphene surface, which leads to such devices failing. Herein, this paper proposes an approach that will enable CTL materials to completely cover a graphene electrode; this is done with the assistance of commonly accessible polar solvents. These are successfully applied to various configurations of OSCs, with power conversion efficiencies of 8.17% for graphene electrode-based c-OSCs (OSCs with conventional structures), 8.38% for i-OSCs (OSCs with inverted structures), and 7.53% for flexible solar cells. The proposed approach is expected to bring about significant advances for efficiency enhancements in graphene-based optoelectronic devices, and it is expected that it will open up new possibilities for flexible optoelectronic systems.

Performance of monolayer graphene nanomechanical resonators with electrical readout.

Science.gov (United States)

Chen, Changyao; Rosenblatt, Sami; Bolotin, Kirill I; Kalb, William; Kim, Philip; Kymissis, Ioannis; Stormer, Horst L; Heinz, Tony F; Hone, James

2009-12-01

The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical applications. Here, we demonstrate the fabrication and electrical readout of monolayer graphene resonators, and test their response to changes in mass and temperature. The devices show resonances in the megahertz range, and the strong dependence of resonant frequency on applied gate voltage can be fitted to a membrane model to yield the mass density and built-in strain of the graphene. Following the removal and addition of mass, changes in both density and strain are observed, indicating that adsorbates impart tension to the graphene. On cooling, the frequency increases, and the shift rate can be used to measure the unusual negative thermal expansion coefficient of graphene. The quality factor increases with decreasing temperature, reaching approximately 1 x 10(4) at 5 K. By establishing many of the basic attributes of monolayer graphene resonators, the groundwork for applications of these devices, including high-sensitivity mass detectors, is put in place.

Tuning metal–graphene interaction by non-metal intercalation: a case study of the graphene/oxygen/Ni (1 1 1) system

International Nuclear Information System (INIS)

Zhang, Wei-Bing; Chen, Chuan

2015-01-01

Epitaxial growth of graphene on transition metal surfaces has been proposed as one of the most promising methods for large-scale preparation of high-quality graphene. However, the presence of the substrate could significantly affect the intrinsic electronic structure of graphene and intercalation of metals is an established route for decoupling the graphene from the substrate. Taking a graphene/Ni(1 1 1) surface as an example, we suggest reactive oxygen as an effective intercalation element to recover the linear dispersion of graphene based on density functional theory calculation, in which vdW interactions are treated using the optB88-vdW functional. The possible intercalation configurations at different coverage are considered and the geometry and electronic structure are analyzed in detail. Our results indicate that the energy favorable structures change from top-fcc to bridge-top configuration after oxygen intercalation and the binding between the graphene and the O/Ni(1 1 1) substrate becomes stronger at high oxygen coverage even than pure Ni(1 1 1) substrate. Most interestingly, the electronic structure of pristine graphene is found to be almost restored, especially for the bridge-top configuration after oxygen intercalation, and the Dirac points move towards the high energy region relative to the Fermi level. A graphene/oxygen/Ni (1 1 1) system is thus suggested as a p-type doped strongly bound Dirac system. Detailed analysis using projected energy band and differential charge density indicates that the intercalated oxygen atoms react with the Ni (1 1 1) surface strongly, which not only blocks the strong interaction between Ni and graphene but also passivates oxygen 2p states. The intercalation mechanisms distinguished from the conventional metal intercalation will be useful to understand other complex intercalation systems. (paper)

Effect of copper surface pre-treatment on the properties of CVD grown graphene

Directory of Open Access Journals (Sweden)

Min-Sik Kim

2014-12-01

Full Text Available Here, we report the synthesis of high quality monolayer graphene on the pre-treated copper (Cu foil by chemical vapor deposition method. The pre-treatment process, which consists of pre-annealing in a hydrogen ambient, followed by diluted nitric acid etching of Cu foil, helps in removing impurities. These impurities include native copper oxide and rolling lines that act as a nucleation center for multilayer graphene. Raman mapping of our graphene grown on pre-treated Cu foil primarily consisted of ∼98% a monolayer graphene with as compared to 75 % for the graphene grown on untreated Cu foil. A high hydrogen flow rate during the pre-annealing process resulted in an increased I2D/IG ratio of graphene up to 3.55. Uniform monolayer graphene was obtained with a I2D/IG ratio and sheet resistance varying from 1.84 – 3.39 and 1110 – 1290 Ω/□, respectively.

Catalytic Ammonia Decomposition over High-Performance Ru/Graphene Nanocomposites for Efficient COx-Free Hydrogen Production

Directory of Open Access Journals (Sweden)

Gang Li

2017-01-01

Full Text Available Highly-dispersed Ru nanoparticles were grown on graphene nanosheets by simultaneously reducing graphene oxide and Ru ions using ethylene glycol (EG, and the resultant Ru/graphene nanocomposites were applied as a catalyst to ammonia decomposition for COx-free hydrogen production. Tuning the microstructures of Ru/graphene nanocomposites was easily accomplished in terms of Ru particle size, morphology, and loading by adjusting the preparation conditions. This was the key to excellent catalytic activity, because ammonia decomposition over Ru catalysts is structure-sensitive. Our results demonstrated that Ru/graphene prepared using water as a co-solvent greatly enhanced the catalytic performance for ammonia decomposition, due to the significantly improved nano architectures of the composites. The long-term stability of Ru/graphene catalysts was evaluated for COx-free hydrogen production from ammonia at high temperatures, and the structural evolution of the catalysts was investigated during the catalytic reactions. Although there were no obvious changes in the catalytic activities at 450 °C over a duration of 80 h, an aggregation of the Ru nanoparticles was still observed in the nanocomposites, which was ascribed mainly to a sintering effect. However, the performance of the Ru/graphene catalyst was decreased gradually at 500 °C within 20 h, which was ascribed mainly to both the effect of the methanation of the graphene nanosheet under a H2 atmosphere and to enhanced sintering under high temperatures.

Electrochemical reduction approach-based 3D graphene/Ni(OH)2 electrode for high-performance supercapacitors

International Nuclear Information System (INIS)

Yan, Huijun; Bai, Jianwei; Wang, Bin; Yu, Lei; Zhao, Lin; Wang, Jun; Liu, Qi; Liu, Jingyuan; Li, Zhanshuang

2015-01-01

Highlights: • 3D graphene foam is synthesized by a simple electrochemical reduction method. • The 3D graphene/Ni(OH) 2 composite is used as a monolithic free-standing electrode material. • The 3D conductive graphene network improves the contact between electrode and electrolyte. • Compositing graphene with Ni(OH) 2 sheets take full advantage of the synergistic effects. • Results show that the as-synthesized products have good electrochemical property. - Abstract: Using a simple electrochemical reduction approach, we have produced three-dimensional (3D) graphene foam having high conductivity and well-defined macroporous structure. Through a hydrothermal process, Ni(OH) 2 sheets are grown in-situ onto the graphene surface. This monolithic 3D graphene/Ni(OH) 2 composite is used as the free-standing electrode for supercapacitor application; it shows a high specific capacitance of 183.1 F g −1 (based on the total mass of the electrode), along with excellent rate capability and cycle performance. The asymmetric supercapacitor based on the 3D graphene/Ni(OH) 2 as a positive electrode and active carbon (AC) as a negative electrode is also assembled and it exhibits a specific capacitance of 148.3 F g −1 at 0.56 A g −1 and a high energy density of 52.7 W h kg −1 at a power density of 444.4 W kg −1 . Moreover, 3D graphene/Ni(OH) 2 //AC has a good cycle stability (87.9% capacitance retention after 1000 cycles), making it promising as one of the most attractive candidates for electrochemical energy storage. This excellent electrochemical performance results from the multiplexed 3D graphene network facilitating electron transport; the interlaced Ni(OH) 2 sheets shorten ion diffusion paths and facilitate the rapid migration of electrolyte ions

Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

Science.gov (United States)

Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

2018-05-01

Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

Multimode analysis of highly tunable, quantum cascade powered, circular graphene spaser

Energy Technology Data Exchange (ETDEWEB)

Jayasekara, Charith, E-mail: charith.jayasekara@monash.edu; Premaratne, Malin [Advanced Computing and Simulation Laboratory (A chi L), Department of Electrical and Computer Systems Engineering, Monash University, Clayton, Victoria 3800 (Australia); Stockman, Mark I. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Gunapala, Sarath D. [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109 (United States)

2015-11-07

We carried out a detailed analysis of a circular graphene spaser made of a circular graphene flake and a quantum cascade well structure. Owing to unique properties of graphene and quantum cascade well structure, the proposed design shows high mechanical and thermal stability and low optical losses. Additionally, operation characteristics of the model are analysed and tunability of the device is demonstrated. Some advantages of the proposed design include compact size, lower power operation, and the ability to set the operating wavelength over a wide range from Mid-IR to Near-IR. Thus, it can have wide spread applications including designing of ultracompact and ultrafast devices, nanoscopy and biomedical applications.

Graphene-Based Integrated Photovoltaic Energy Harvesting/Storage Device.

Science.gov (United States)

Chien, Chih-Tao; Hiralal, Pritesh; Wang, Di-Yan; Huang, I-Sheng; Chen, Chia-Chun; Chen, Chun-Wei; Amaratunga, Gehan A J

2015-06-24

Energy scavenging has become a fundamental part of ubiquitous sensor networks. Of all the scavenging technologies, solar has the highest power density available. However, the energy source is erratic. Integrating energy conversion and storage devices is a viable route to obtain self-powered electronic systems which have long-term maintenance-free operation. In this work, we demonstrate an integrated-power-sheet, consisting of a string of series connected organic photovoltaic cells (OPCs) and graphene supercapacitors on a single substrate, using graphene as a common platform. This results in lighter and more flexible power packs. Graphene is used in different forms and qualities for different functions. Chemical vapor deposition grown high quality graphene is used as a transparent conductor, while solution exfoliated graphene pastes are used as supercapacitor electrodes. Solution-based coating techniques are used to deposit the separate components onto a single substrate, making the process compatible with roll-to-roll manufacture. Eight series connected OPCs based on poly(3-hexylthiophene)(P3HT):phenyl-C61-butyric acid methyl ester (PC60 BM) bulk-heterojunction cells with aluminum electrodes, resulting in a ≈5 V open-circuit voltage, provide the energy harvesting capability. Supercapacitors based on graphene ink with ≈2.5 mF cm(-2) capacitance provide the energy storage capability. The integrated-power-sheet with photovoltaic (PV) energy harvesting and storage functions had a mass of 0.35 g plus the substrate. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Holey graphene frameworks for highly selective post-combustion carbon capture

Science.gov (United States)

Chowdhury, Shamik; Balasubramanian, Rajasekhar

2016-02-01

Atmospheric CO2 concentrations continue to rise rapidly in response to increased combustion of fossil fuels, contributing to global climate change. In order to mitigate the effects of global warming, development of new materials for cost-effective and energy-efficient CO2 capture is critically important. Graphene-based porous materials are an emerging class of solid adsorbents for selectively removing CO2 from flue gases. Herein, we report a simple and scalable approach to produce three-dimensional holey graphene frameworks with tunable porosity and pore geometry, and demonstrate their application as high-performance CO2 adsorbents. These holey graphene macrostructures exhibit a significantly improved specific surface area and pore volume compared to their pristine counterparts, and can be effectively used in post-combustion CO2 adsorption systems because of their intrinsic hydrophobicity together with good gravimetric storage capacities, rapid removal capabilities, superior cycling stabilities, and moderate initial isosteric heats. In addition, an exceptionally high CO2 over N2 selectivity can be achieved under conditions relevant to capture from the dry exhaust gas stream of a coal burning power plant, suggesting the possibility of recovering highly pure CO2 for long-term sequestration and/or utilization for downstream applications.

A novel and facile synthesis approach for a porous carbon/graphene composite for high-performance supercapacitors.

Science.gov (United States)

Liu, Ting; Zhang, Xuesha; Liu, Kang; Liu, Yanyan; Liu, Mengjie; Wu, Wenyu; Gu, Yu; Zhang, Ruijun

2018-03-02

We propose a novel and facile synthesis approach to a porous carbon/graphene composite. Graphene is obtained from room-temperature expanded graphite (RTEG), not involving the use of graphite oxide (GO). Porous carbon is acquired by carbonization and KOH-activation of polyvinylpyrrolidone (PVP), which is used to exfoliate RTEG into graphene and inhibit the restacking of the resultant graphene in the present work. The prepared porous carbon/graphene composite has a high specific surface area (SSA) (3008 m 2 g -1 ) and a hierarchical micro- and meso- pore structure (dominant pores in the range of 1-5 nm). Electrochemical measurement demonstrates that the as-prepared porous carbon/graphene composite can deliver an outstanding specific capacitance of up to 340 F g -1 at 5 mV s -1 in 6 M KOH electrolyte. This specific capacitance is among the highest reported so far for porous carbon/graphene materials. Moreover, the prepared composite as an electrode material also exhibits excellent cycling stability (94.4% capacitance retention over 10 000 cycles). The as-fabricated symmetrical supercapacitor exhibits a high energy density of 10.9 W h kg -1 (based on total mass of electrode materials) and an outstanding energy density retention, even at high power density. Compared with conventional preparation routes for porous carbon/graphene composites, the present approach is significantly simple, convenient and cost-effective, which will make it more competent in the development of electrode materials for high-performance supercapacitors.

High Efficiency Flexible Battery Based on Graphene-carbon Nanotube Hybrid Structure

Science.gov (United States)

2015-02-26

Choi, Carbon 77 1065(2014) 2. Hierarchical NiCo2O4@nickel-sulfide nanoplate arrays for high-performance supercapacitors , Chu Q, Wang W, Wang X...Graphene:Synthesis and Applications, CRC Press ISBN-10: 1439861870 | ISBN-13: 978-1439861875 | Publication Date: October 11, 2011 Handbook of Nanomaterials ...Properties, Carbon Nanomaterials : a review, Nitin Choudhary, Sookhyun Hwang, Wonbong Choi, Springer (2013) 15. Santanu Das and Wonbong Choi, Graphene

Growth mechanism of graphene on platinum: Surface catalysis and carbon segregation

International Nuclear Information System (INIS)

Sun, Jie; Lindvall, Niclas; Yurgens, August; Nam, Youngwoo; Cole, Matthew T.; Teo, Kenneth B. K.; Woo Park, Yung

2014-01-01

A model of the graphene growth mechanism of chemical vapor deposition on platinum is proposed and verified by experiments. Surface catalysis and carbon segregation occur, respectively, at high and low temperatures in the process, representing the so-called balance and segregation regimes. Catalysis leads to self-limiting formation of large area monolayer graphene, whereas segregation results in multilayers, which evidently “grow from below.” By controlling kinetic factors, dominantly monolayer graphene whose high quality has been confirmed by quantum Hall measurement can be deposited on platinum with hydrogen-rich environment, quench cooling, tiny but continuous methane flow and about 1000 °C growth temperature

In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

Science.gov (United States)

Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

2016-05-01

Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

Advanced Sulfur Cathode Enabled by Highly Crumpled Nitrogen-Doped Graphene Sheets for High-Energy-Density Lithium-Sulfur Batteries.

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Song, Jiangxuan; Yu, Zhaoxin; Gordin, Mikhail L; Wang, Donghai

2016-02-10

Herein, we report a synthesis of highly crumpled nitrogen-doped graphene sheets with ultrahigh pore volume (5.4 cm(3)/g) via a simple thermally induced expansion strategy in absence of any templates. The wrinkled graphene sheets are interwoven rather than stacked, enabling rich nitrogen-containing active sites. Benefiting from the unique pore structure and nitrogen-doping induced strong polysulfide adsorption ability, lithium-sulfur battery cells using these wrinkled graphene sheets as both sulfur host and interlayer achieved a high capacity of ∼1000 mAh/g and exceptional cycling stability even at high sulfur content (≥80 wt %) and sulfur loading (5 mg sulfur/cm(2)). The high specific capacity together with the high sulfur loading push the areal capacity of sulfur cathodes to ∼5 mAh/cm(2), which is outstanding compared to other recently developed sulfur cathodes and ideal for practical applications.

Molecular beam epitaxial growth of graphene and ridge-structure networks of graphene

International Nuclear Information System (INIS)

Maeda, Fumihiko; Hibino, Hiroki

2011-01-01

By gas-source molecular beam epitaxy (MBE) using cracked ethanol, we grew graphene at substrate temperatures between 600 and 915 °C on graphene formed on SiC(0 0 0 1) by thermal decomposition. To investigate the substrate temperature dependence of graphene growth we analysed the MBE-grown graphene by Raman spectroscopy and in situ x-ray photoelectron spectroscopy (XPS) and observed it by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (TEM). Analyses using the G-band peak and the peak intensity ratio between D- and G-band peaks in the Raman spectra revealed that growth at higher temperatures improved the crystallinity and increased the domain size. Although the growth rate decreased at higher temperatures, as revealed by XPS, these results indicated that growth at a higher temperature is effective in obtaining graphene of higher quality. Furthermore, the AFM and TEM observations revealed a network of fin-like ridge structures of graphene sticking out from the surface. The presence of these 'graphene nanofins' indicated that two-dimensional islands of graphene are surrounded by the nanofins, and the island size was estimated to be 67 nm using the average distance between the nanofins.

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

Science.gov (United States)

Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

2017-06-01

N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.

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Liu, Donghua; Chen, Xiaosong; Hu, Yibin; Sun, Tai; Song, Zhibo; Zheng, Yujie; Cao, Yongbin; Cai, Zhi; Cao, Min; Peng, Lan; Huang, Yuli; Du, Lei; Yang, Wuli; Chen, Gang; Wei, Dapeng; Wee, Andrew Thye Shen; Wei, Dacheng

2018-01-15

Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO 2 /Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 × 10 -9  mol L -1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics.

Transfer-Free Fabrication of Graphene Scaffolds on High-k Dielectrics from Metal-Organic Oligomers.

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Pang, Qingqing; Wang, Deyan; Wang, Xiuyan; Feng, Shaoguang; Clark, Michael B; Li, Qiaowei

2016-09-28

In situ fabrication of graphene scaffold-ZrO2 nanofilms is achieved by thermal annealing of Zr-based metal-organic oligomers on SiO2 substrates. The structural similarities of the aromatic moieties in the ligand (phenyl-, naphthyl-, anthryl-, and pyrenyl-) compared to graphene play a major role in the ordering of the graphene scaffolds obtained. The depth profiling analysis reveals ultrathin carbon-pure or carbon-rich surfaces of the graphene scaffold-ZrO2 nanofilms. The graphene scaffolds with ∼96.0% transmittance in the visible region and 4.8 nm in thickness can be grown with this non-chemical vapor deposition method. Furthermore, the heterogeneous graphene scaffold-ZrO2 nanofilms show a low sheet resistance of 17.0 kΩ per square, corresponding to electrical conductivity of 3197 S m(-1). The strategy provides a facile method to fabricate graphene scaffolds directly on high-k dielectrics without transferring process, paving the way for its application in fabricating electronic devices.

Highly crumpled solar reduced graphene oxide electrode for supercapacitor application

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Mohanapriya, K.; Ahirrao, Dinesh J.; Jha, Neetu

2018-04-01

Highly crumpled solar reduced graphene oxide (CSRGO) was synthesized by simple and rapid method through freezing the solar reduced graphene oxide aqueous suspension using liquid nitrogen and used as electrode material for supercapacitor application. This electrode material was characterized by transmission electron microscope (TEM), X-Ray diffractometer (XRD) and Raman Spectroscopy techniques to understand the morphology and structure. The electrochemical performance was studied by cyclic voltammetry (CV), galvanostatic charge/discharge (CD) and electrochemical impedance spectroscopy (EIS) using 6M KOH electrolyte. The CSRGO exhibit high specifc capacitance of 210.1 F g-1 at the current density of 0.5 A g-1 and shows excellent rate capability. These features make the CSRGO material as promising electrode for high-performance supercapacitors.

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

International Nuclear Information System (INIS)

Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto; Masubuchi, Satoru; Machida, Tomoki

2015-01-01

We demonstrate a vertical field-effect transistor based on a graphene/MoSe 2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe 2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe 2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10 5 . These results point to the potential high performance of the graphene/MoSe 2 vdW heterostructure for electronics applications

Single crystalline metal films as substrates for graphene growth

Energy Technology Data Exchange (ETDEWEB)

Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

2017-11-15

Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

2007-07-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

Environmental Synthesis of Few Layers Graphene Sheets Using Ultrasonic Exfoliation with Enhanced Electrical and Thermal Properties.

Directory of Open Access Journals (Sweden)

Monir Noroozi

Full Text Available In this paper, we report how few layers graphene that can be produced in large quantity with low defect ratio from exfoliation of graphite by using a high intensity probe sonication in water containing liquid hand soap and PVP. It was founded that the graphene powder obtained by this simple exfoliation method after the heat treatment had an excellent exfoliation into a single or layered graphene sheets. The UV-visible spectroscopy, FESEM, TEM, X-ray powder diffraction and Raman spectroscopy was used to analyse the graphene product. The thermal diffusivity of the samples was analysed using a highly accurate thermal-wave cavity photothermal technique. The data obtained showed excellent enhancement in the thermal diffusivity of the graphene dispersion. This well-dispersed graphene was then used to fabricate an electrically conductive polymer-graphene film composite. The results demonstrated that this low cost and environmental friendly technique allowed to the production of high quality layered graphene sheets, improved the thermal and electrical properties. This may find use in the wide range of applications based on graphene.

Creation of nanopores on graphene planes with MgO template for preparing high-performance supercapacitor electrodes

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Wang, Huanjing; Sun, Xiuxia; Liu, Zonghuai; Lei, Zhibin

2014-05-01

Creation of nanopores on graphene planar sheets is of great significance in promoting the kinetic diffusion of electrolyte and enhancing the utilization efficiency of graphene planar sheets. Herein, we developed a facile chemical vapor deposition strategy to prepare highly porous graphene with flake-like MgO as template and ferrocene as the carbon precursor. The graphene layers show a highly porous structure with small mesopores of 4-8 nm, large mesopores of 10-20 nm and additional macropores of 100-200 nm. These nanopores on graphene sheets provide numerous channels for fast ion transport perpendicular to the 2D basal plane, while the good powder conductivity ensures an effective electron propagation within the 2D graphene plane. As a result, a specific capacitance of 303 F g-1, an areal capacitance up to 17.3 μF cm-2 and a nearly tenfold shorter time constant were achieved when compared with those of nonporous and stacked graphene electrodes. The method demonstrated herein would open up an opportunity to prepare porous graphene for a wide applications in energy storage, biosensors, nanoelectronics and catalysis.Creation of nanopores on graphene planar sheets is of great significance in promoting the kinetic diffusion of electrolyte and enhancing the utilization efficiency of graphene planar sheets. Herein, we developed a facile chemical vapor deposition strategy to prepare highly porous graphene with flake-like MgO as template and ferrocene as the carbon precursor. The graphene layers show a highly porous structure with small mesopores of 4-8 nm, large mesopores of 10-20 nm and additional macropores of 100-200 nm. These nanopores on graphene sheets provide numerous channels for fast ion transport perpendicular to the 2D basal plane, while the good powder conductivity ensures an effective electron propagation within the 2D graphene plane. As a result, a specific capacitance of 303 F g-1, an areal capacitance up to 17.3 μF cm-2 and a nearly tenfold shorter time

Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

KAUST Repository

Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W.; Ryu, Koungmin; Thompson, Mark E.; Zhou, Chongwu

2010-01-01

We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD

Highly sensitive MoS2 photodetectors with graphene contacts

Science.gov (United States)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Chemical vapour deposition at atmospheric pressure of graphene on molybdenum foil: Effect of annealing time on characteristics and corrosion stability of graphene coatings

International Nuclear Information System (INIS)

Naghdi, Samira; Jevremović, Ivana; Mišković-Stanković, Vesna; Rhee, Kyong Yop

2016-01-01

Highlights: • Atmospheric pressure chemical vapor deposition of graphene on molybdenum foils. • Quality and domain size of graphene layers increased with longer annealing times. • The number of graphene layers decreased with longer annealing times. • Graphene coatings on molybdenum foils exhibited corrosion inhibitive properties. - Abstract: In this work, the effect of pre-annealing of Mo substrate on the quality of graphene layers grown by chemical vapour deposition was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. Moreover, different electrochemical techniques were employed to investigate the corrosion stability of the graphene coated Mo in 0.1 M NaCl. Longer annealing time resulted in less defective graphene coatings with fewer layers. Graphene coating on the annealed Mo provided better protection against corrosion during the initial exposure times, while after prolonged exposure times, both graphene coatings on annealed and non-annealed Mo exhibited nearly the same corrosion inhibitive properties.

Activated Biomass-derived Graphene-based Carbons for Supercapacitors with High Energy and Power Density.

Science.gov (United States)

Jung, SungHoon; Myung, Yusik; Kim, Bit Na; Kim, In Gyoo; You, In-Kyu; Kim, TaeYoung

2018-01-30

Here, we present a facile and low-cost method to produce hierarchically porous graphene-based carbons from a biomass source. Three-dimensional (3D) graphene-based carbons were produced through continuous sequential steps such as the formation and transformation of glucose-based polymers into 3D foam-like structures and their subsequent carbonization to form the corresponding macroporous carbons with thin graphene-based carbon walls of macropores and intersectional carbon skeletons. Physical and chemical activation was then performed on this carbon to create micro- and meso-pores, thereby producing hierarchically porous biomass-derived graphene-based carbons with a high Brunauer-Emmett-Teller specific surface area of 3,657 m 2  g -1 . Owing to its exceptionally high surface area, interconnected hierarchical pore networks, and a high degree of graphitization, this carbon exhibited a high specific capacitance of 175 F g -1 in ionic liquid electrolyte. A supercapacitor constructed with this carbon yielded a maximum energy density of 74 Wh kg -1 and a maximum power density of 408 kW kg -1 , based on the total mass of electrodes, which is comparable to those of the state-of-the-art graphene-based carbons. This approach holds promise for the low-cost and readily scalable production of high performance electrode materials for supercapacitors.

Graphene-Molybdenum Disulfide-Graphene Tunneling Junctions with Large-Area Synthesized Materials.

Science.gov (United States)

Joiner, Corey A; Campbell, Philip M; Tarasov, Alexey A; Beatty, Brian R; Perini, Chris J; Tsai, Meng-Yen; Ready, William J; Vogel, Eric M

2016-04-06

Tunneling devices based on vertical heterostructures of graphene and other 2D materials can overcome the low on-off ratios typically observed in planar graphene field-effect transistors. This study addresses the impact of processing conditions on two-dimensional materials in a fully integrated heterostructure device fabrication process. In this paper, graphene-molybdenum disulfide-graphene tunneling heterostructures were fabricated using only large-area synthesized materials, unlike previous studies that used small exfoliated flakes. The MoS2 tunneling barrier is either synthesized on a sacrificial substrate and transferred to the bottom-layer graphene or synthesized directly on CVD graphene. The presence of graphene was shown to have no impact on the quality of the grown MoS2. The thickness uniformity of MoS2 grown on graphene and SiO2 was found to be 1.8 ± 0.22 nm. XPS and Raman spectroscopy are used to show how the MoS2 synthesis process introduces defects into the graphene structure by incorporating sulfur into the graphene. The incorporation of sulfur was shown to be greatly reduced in the absence of molybdenum suggesting molybdenum acts as a catalyst for sulfur incorporation. Tunneling simulations based on the Bardeen transfer Hamiltonian were performed and compared to the experimental tunneling results. The simulations show the use of MoS2 as a tunneling barrier suppresses contributions to the tunneling current from the conduction band. This is a result of the observed reduction of electron conduction within the graphene sheets.

Direct formation of reduced graphene oxide and 3D lightweight nickel network composite foam by hydrohalic acids and its application for high-performance supercapacitors.

Science.gov (United States)

Huang, Haifu; Tang, Yanmei; Xu, Lianqiang; Tang, Shaolong; Du, Youwei

2014-07-09

Here, a novel graphene composite foam with 3D lightweight continuous and interconnected nickel network was successfully synthesized by hydroiodic (HI) acid using nickel foam as substrate template. The graphene had closely coated on the backbone of the 3D nickel conductive network to form nickel network supported composite foam without any polymeric binder during the HI reduction of GO process, and the nickel conductive network can be maintained even in only a small amount of nickel with 1.1 mg/cm(2) and had replaced the traditional current collector nickel foam (35 mg/cm(2)). In the electrochemical measurement, a supercapacitor device based on the 3D nickel network and graphene composite foam exhibited high rate capability of 100 F/g at 0.5 A/g and 86.7 F/g at 62.5 A/g, good cycle stability with capacitance retention of 95% after 2000 cycles, low internal resistance (1.68 Ω), and excellent flexible properties. Furthermore, the gravimetric capacitance (calculated using the total mass of the electrode) was high up to 40.9 F/g. Our work not only demonstrates high-quality graphene/nickel composite foam, but also provides a universal route for the rational design of high performance of supercapacitors.

High performance electro-optical modulator based on photonic crystal and graphene

Science.gov (United States)

Malekmohammad, M.; Asadi, R.

2017-07-01

An electro-optical modulator is demonstrated based on Fano-resonance effect in an out-of-plane illumination of one-dimensional slab photonic crystal composed of two graphene layers. It has been shown that high sensitivity of the Fano-resonance and electro-refractive tuning of graphene layers provides a suitable condition to obtain an electro-optical modulator with low energy consumption (8 pJ) with contrast of 0.4.

Graphene and carbon nanotube composite electrodes for supercapacitors with ultra-high energy density.

Science.gov (United States)

Cheng, Qian; Tang, Jie; Ma, Jun; Zhang, Han; Shinya, Norio; Qin, Lu-Chang

2011-10-21

We describe a graphene and single-walled carbon nanotube (SWCNT) composite film prepared by a blending process for use as electrodes in high energy density supercapacitors. Specific capacitances of 290.6 F g(-1) and 201.0 F g(-1) have been obtained for a single electrode in aqueous and organic electrolytes, respectively, using a more practical two-electrode testing system. In the organic electrolyte the energy density reached 62.8 Wh kg(-1) and the power density reached 58.5 kW kg(-1). The addition of single-walled carbon nanotubes raised the energy density by 23% and power density by 31% more than the graphene electrodes. The graphene/CNT electrodes exhibited an ultra-high energy density of 155.6 Wh kg(-1) in ionic liquid at room temperature. In addition, the specific capacitance increased by 29% after 1000 cycles in ionic liquid, indicating their excellent cyclicity. The SWCNTs acted as a conductive additive, spacer, and binder in the graphene/CNT supercapacitors. This work suggests that our graphene/CNT supercapacitors can be comparable to NiMH batteries in performance and are promising for applications in hybrid vehicles and electric vehicles. This journal is © the Owner Societies 2011

Highly atom-economic synthesis of graphene/Mn3O4 hybrid composites for electrochemical supercapacitors

Science.gov (United States)

Jiangying, Qu; Feng, Gao; Quan, Zhou; Zhiyu, Wang; Han, Hu; Beibei, Li; Wubo, Wan; Xuzhen, Wang; Jieshan, Qiu

2013-03-01

A highly atom-economic procedure for the preparation of reduced graphene oxide/Mn3O4 (rGO/Mn3O4) composites is reported. Pristine graphene oxide/manganese sulfate (GO/MnSO4) suspension produced by modified Hummers method is utilized with high efficiency, which has been in situ converted into GO/Mn3O4 hybrid composite by air oxidation, then into rGO/Mn3O4 composite by means of dielectric barrier discharge (DBD) plasma-assisted deoxygenation. The Mn3O4 content of the rGO/Mn3O4 composites can be readily tailored. It is observed that Mn3O4 nanoparticles of 15-24 nm are well-dispersed on graphene sheets with Mn3O4 loading as high as 90%. The specific capacitance of the as-prepared rGO/Mn3O4 hybrids with 90% Mn3O4 reaches 193 F g-1 when employed as the electrode material in neutral Na2SO4 electrolyte solutions (76 F g-1 for pristine graphene and 95 F g-1 for pure Mn3O4), which indicates the positive synergetic effects from both graphene and attached Mn3O4. The method developed in this study should offer a new technique for the large scale and highly atom-economic production of graphene/MnOx composites for many applications.