MEMS-based thick film PZT vibrational energy harvester

DEFF Research Database (Denmark)

Lei, Anders; Xu, Ruichao; Thyssen, Anders

2011-01-01

We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechan......We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

Science.gov (United States)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

Sub-50 nm gate length SOI transistor development for high performance microprocessors

International Nuclear Information System (INIS)

Horstmann, M.; Greenlaw, D.; Feudel, Th.; Wei, A.; Frohberg, K.; Burbach, G.; Gerhardt, M.; Lenski, M.; Stephan, R.; Wieczorek, K.; Schaller, M.; Hohage, J.; Ruelke, H.; Klais, J.; Huebler, P.; Luning, S.; Bentum, R. van; Grasshoff, G.; Schwan, C.; Cheek, J.; Buller, J.; Krishnan, S.; Raab, M.; Kepler, N.

2004-01-01

Partial depleted (PD) SOI technologies have reached maturity for production of high speed, low power microprocessors. The paper will highlight several challenges found during the course of development for bringing 40 nm gate length (L GATE ) PD SOI transistors into volume manufacturing for high-speed microprocessors. The key innovations developed for this transistor in order to overcome classical gate oxide and L GATE scaling is an unique differential triple spacer structure, stressed overlayer films inducing strain in the Silicon channel and optimized junctions. This transistor structure yields an outstanding ring oscillator speed with an unloaded inverter delay of 5.5 ps. The found improvements are highly manufacturable and scaleable for future device technologies like FD SOI

New dynamic silicon photonic components enabled by MEMS technology

Science.gov (United States)

Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

2018-02-01

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

Formation of SIMOX–SOI structure by high-temperature oxygen implantation

International Nuclear Information System (INIS)

Hoshino, Yasushi; Kamikawa, Tomohiro; Nakata, Jyoji

2015-01-01

We have performed oxygen ion implantation in silicon at very high substrate-temperatures (⩽1000 °C) for the purpose of forming silicon-on-insulator (SOI) structure. We have expected that the high-temperature implantation can effectively avoids ion-beam-induced damages in the SOI layer and simultaneously stabilizes the buried oxide (BOX) and SOI-Si layer. Such a high-temperature implantation makes it possible to reduce the post-implantation annealing temperature. In the present study, oxygen ions with 180 keV are incident on Si(0 0 1) substrates at various temperatures from room temperature (RT) up to 1000 °C. The ion-fluencies are in order of 10"1"7–10"1"8 ions/cm"2. Samples have been analyzed by atomic force microscope, Rutherford backscattering, and micro-Raman spectroscopy. It is found in the AFM analysis that the surface roughness of the samples implanted at 500 °C or below are significantly small with mean roughness of less than 1 nm, and gradually increased for the 800 °C-implanted sample. On the other hand, a lot of dents are observed for the 1000 °C-implanted sample. RBS analysis has revealed that stoichiometric SOI-Si and BOX-SiO_2 layers are formed by oxygen implantation at the substrate temperatures of RT, 500, and 800 °C. However, SiO_2-BOX layer has been desorbed during the implantation. Raman spectra shows that the ion-beam-induced damages are fairly suppressed by such a high-temperatures implantation.

Centimeter-scale MEMS scanning mirrors for high power laser application

Science.gov (United States)

Senger, F.; Hofmann, U.; v. Wantoch, T.; Mallas, C.; Janes, J.; Benecke, W.; Herwig, Patrick; Gawlitza, P.; Ortega-Delgado, M.; Grune, C.; Hannweber, J.; Wetzig, A.

2015-02-01

A higher achievable scan speed and the capability to integrate two scan axes in a very compact device are fundamental advantages of MEMS scanning mirrors over conventional galvanometric scanners. There is a growing demand for biaxial high speed scanning systems complementing the rapid progress of high power lasers for enabling the development of new high throughput manufacturing processes. This paper presents concept, design, fabrication and test of biaxial large aperture MEMS scanning mirrors (LAMM) with aperture sizes up to 20 mm for use in high-power laser applications. To keep static and dynamic deformation of the mirror acceptably low all MEMS mirrors exhibit full substrate thickness of 725 μm. The LAMM-scanners are being vacuum packaged on wafer-level based on a stack of 4 wafers. Scanners with aperture sizes up to 12 mm are designed as a 4-DOF-oscillator with amplitude magnification applying electrostatic actuation for driving a motor-frame. As an example a 7-mm-scanner is presented that achieves an optical scan angle of 32 degrees at 3.2 kHz. LAMM-scanners with apertures sizes of 20 mm are designed as passive high-Q-resonators to be externally excited by low-cost electromagnetic or piezoelectric drives. Multi-layer dielectric coatings with a reflectivity higher than 99.9 % have enabled to apply cw-laser power loads of more than 600 W without damaging the MEMS mirror. Finally, a new excitation concept for resonant scanners is presented providing advantageous shaping of intensity profiles of projected laser patterns without modulating the laser. This is of interest in lighting applications such as automotive laser headlights.

Research on SOI-based micro-resonator devices

Science.gov (United States)

Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

2010-10-01

SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of 10 Gbit/s high speed microring modulators.

Fast tunable blazed MEMS grating for external cavity lasers

Science.gov (United States)

Tormen, Maurizio; Niedermann, Philippe; Hoogerwerf, Arno; Shea, Herbert; Stanley, Ross

2017-11-01

Diffractive MEMS are interesting for a wide range of applications, including displays, scanners or switching elements. Their advantages are compactness, potentially high actuation speed and in the ability to deflect light at large angles. We have designed and fabricated deformable diffractive MEMS grating to be used as tuning elements for external cavity lasers. The resulting device is compact, has wide tunability and a high operating speed. The initial design is a planar grating where the beams are free-standing and attached to each other using leaf springs. Actuation is achieved through two electrostatic comb drives at either end of the grating. To prevent deformation of the free-standing grating, the device is 10 μm thick made from a Silicon on Insulator (SOI) wafer in a single mask process. At 100V a periodicity tuning of 3% has been measured. The first resonant mode of the grating is measured at 13.8 kHz, allowing high speed actuation. This combination of wide tunability and high operating speed represents state of the art in the domain of tunable MEMS filters. In order to improve diffraction efficiency and to expand the usable wavelength range, a blazed version of the deformable MEMS grating has been designed. A key issue is maintaining the mechanical properties of the original device while providing optically smooth blazed beams. Using a process based on anisotropic KOH etching, blazed gratings have been obtained and preliminary characterization is promising.

A 3-DOF SOI MEMS ultrasonic energy harvester for implanted devices

International Nuclear Information System (INIS)

Fowler, A G; Moheimani, S O R; Behrens, S

2013-01-01

This paper reports the design and testing of a microelectromechanical systems (MEMS) energy harvester that is designed to harvest electrical energy from an external source of ultrasonic waves. This mechanism is potentially suited to applications including the powering of implanted devices for biomedical applications. The harvester employs a novel 3-degree of freedom design, with electrical energy being generated from displacements of a proof mass via electrostatic transducers. A silicon-on-insulator MEMS process was used to fabricate the device, with experimental characterization showing that the harvester can generate 24.7 nW, 19.8 nW, and 14.5 nW of electrical power respectively through its x-, y-, and z-axis vibrational modes

Design, modeling, fabrication and characterization of an electret-based MEMS electrostatic energy harvester

NARCIS (Netherlands)

Altena, G.; Hohlfeld, D.; Elfrink, R.; Goedbloed, M.H.; Schaijk, R. van

2011-01-01

This paper reports on the design, modelling, fabrication and characterization of an electret-based MEMS electrostatic energy harvester with an elegant and robust process flow. The fabrication is based on a SOI wafer with self-aligned electrodes of the variable capacitor. The output current of the

A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer

International Nuclear Information System (INIS)

Wu Lijuan; Zhang Wentong; Zhang Bo; Li Zhaoji

2013-01-01

A novel silicon-on-insulator (SOI) high-voltage pLDMOS is presented with a partial interface equipotential floating buried layer (FBL) and its analytical model is analyzed in this paper. The surface heavily doped p-top layers, interface floating buried N + /P + layers, and three-step field plates are designed carefully in the FBL SOI pLDMOS to optimize the electric field distribution of the drift region and reduce the specific resistance. On the condition of ESIMOX (epoxy separated by implanted oxygen), it has been shown that the breakdown voltage of the FBL SOI pLDMOS is increased from −232 V of the conventional SOI to −425 V and the specific resistance R on,sp is reduced from 0.88 to 0.2424 Ω·cm 2 . (semiconductor devices)

In vivo cellular imaging with microscopes enabled by MEMS scanners

Science.gov (United States)

Ra, Hyejun

High-resolution optical imaging plays an important role in medical diagnosis and biomedical research. Confocal microscopy is a widely used imaging method for obtaining cellular and sub-cellular images of biological tissue in reflectance and fluorescence modes. Its characteristic optical sectioning capability also enables three-dimensional (3-D) image reconstruction. However, its use has mostly been limited to excised tissues due to the requirement of high numerical aperture (NA) lenses for cellular resolution. Microscope miniaturization can enable in vivo imaging to make possible early cancer diagnosis and biological studies in the innate environment. In this dissertation, microscope miniaturization for in vivo cellular imaging is presented. The dual-axes confocal (DAC) architecture overcomes limitations of the conventional single-axis confocal (SAC) architecture to allow for miniaturization with high resolution. A microelectromechanical systems (MEMS) scanner is the central imaging component that is key in miniaturization of the DAC architecture. The design, fabrication, and characterization of the two-dimensional (2-D) MEMS scanner are presented. The gimbaled MEMS scanner is fabricated on a double silicon-on-insulator (SOI) wafer and is actuated by self-aligned vertical electrostatic combdrives. The imaging performance of the MEMS scanner in a DAC configuration is shown in a breadboard microscope setup, where reflectance and fluorescence imaging is demonstrated. Then, the MEMS scanner is integrated into a miniature DAC microscope. The whole imaging system is integrated into a portable unit for research in small animal models of human biology and disease. In vivo 3-D imaging is demonstrated on mouse skin models showing gene transfer and siRNA silencing. The siRNA silencing process is sequentially imaged in one mouse over time.

Mechanical stop mechanism for overcoming MEMS fabrication tolerances

International Nuclear Information System (INIS)

Hussein, Hussein; Bourbon, Gilles; Le Moal, Patrice; Lutz, Philippe; Haddab, Yassine

2017-01-01

A mechanical stop mechanism is developed in order to compensate MEMS fabrication tolerances in discrete positioning. The mechanical stop mechanism is designed to be implemented on SOI wafers using a common DRIE etching process. The various fabrication tolerances obtained due to the etching process are presented and discussed in the paper. The principle and design of the mechanism are then presented. Finally, experiments on microfabricated positioning prototypes show accurate steps unaffected by the fabrication tolerances. (technical note)

Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

Science.gov (United States)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation

International Nuclear Information System (INIS)

Dong Yemin; Chen Meng; Chen Jing; Wang Xiang; Wang Xi

2004-01-01

Hybrid substrates comprising both silicon-on-insulator (SOI) and bulk Si regions have been fabricated using the technique of patterned separation by implantation of oxygen (SIMOX) with high-dose (1.5 x 10 18 cm -2 ) and low-dose ((1.5-3.5) x 10 17 cm -2 ) oxygen ions, respectively. Cross-sectional transmission electron microscopy (XTEM) was employed to examine the microstructures of the resulting materials. Experimental results indicate that the SOI/Si hybrid substrate fabricated using high-dose SIMOX is of inferior quality with very large surface height step and heavily damaged transitions between the SOI and bulk regions. However, the quality of the SOI/Si hybrid substrate is enhanced dramatically by reducing the implant dose. The defect density in transitions is reduced considerably. Moreover, the expected surface height difference does not exist and the surface is exceptionally flat. The possible mechanisms responsible for the improvements in quality are discussed

High Volume Manufacturing and Field Stability of MEMS Products

Science.gov (United States)

Martin, Jack

Low volume MEMS/NEMS production is practical when an attractive concept is implemented with business, manufacturing, packaging, and test support. Moving beyond this to high volume production adds requirements on design, process control, quality, product stability, market size, market maturity, capital investment, and business systems. In a broad sense, this chapter uses a case study approach: It describes and compares the silicon-based MEMS accelerometers, pressure sensors, image projection systems, and gyroscopes that are in high volume production. Although they serve several markets, these businesses have common characteristics. For example, the manufacturing lines use automated semiconductor equipment and standard material sets to make consistent products in large quantities. Standard, well controlled processes are sometimes modified for a MEMS product. However, novel processes that cannot run with standard equipment and material sets are avoided when possible. This reliance on semiconductor tools, as well as the organizational practices required to manufacture clean, particle-free products partially explains why the MEMS market leaders are integrated circuit manufacturers. There are other factors. MEMS and NEMS are enabling technologies, so it can take several years for high volume applications to develop. Indeed, market size is usually a strong function of price. This becomes a vicious circle, because low price requires low cost - a result that is normally achieved only after a product is in high volume production. During the early years, IC companies reduced cost and financial risk by using existing facilities for low volume MEMS production. As a result, product architectures are partially determined by capabilities developed for previous products. This chapter includes a discussion of MEMS product architecture with particular attention to the impact of electronic integration, packaging, and surfaces. Packaging and testing are critical, because they are

An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

Science.gov (United States)

Teo, Adrian J. T.; Li, Holden; Tan, Say Hwa; Yoon, Yong-Jin

2017-06-01

Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G-1, and a highest recorded sensitivity of 44.1 mV G-1. A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices.

An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

International Nuclear Information System (INIS)

Teo, Adrian J T; Li, Holden; Yoon, Yong-Jin; Tan, Say Hwa

2017-01-01

Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G −1 , and a highest recorded sensitivity of 44.1 mV G −1 . A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices. (technical note)

Design and optimization of different P-channel LUDMOS architectures on a 0.18 µm SOI-CMOS technology

International Nuclear Information System (INIS)

Cortés, I; Toulon, G; Morancho, F; Hugonnard-Bruyere, E; Villard, B; Toren, W J

2011-01-01

This paper focuses on the design and optimization of different power P-channel LDMOS transistors (V BR > 120 V) to be integrated in a new generation of smart-power technology based upon a 0.18 µm SOI-CMOS technology. Different drift architectures have been envisaged in this work with the purpose of optimizing the transistor static (R on-sp /V BR trade-off) and dynamic (R on × Q g ) characteristics to improve their switching performance. Conventional single-RESURF P-channel LUDMOS architectures on thin-SOI substrates show very poor R on-sp /V BR trade-off due to their low RESURF effectiveness. Alternative drift configurations such as the addition of an N-type buried layer deep inside the SOI layer or the application of the superjunction concept by alternatively placing stacked P- and N-type pillars could highly improve the RESURF effectiveness and the P-channel device switching performance

Aspects of High-Q Tunable Antennas and Their Deployment for 4G Mobile Communications

DEFF Research Database (Denmark)

Bahramzy, Pevand; Jagielski, Ole; Svendsen, Simon

2016-01-01

Tunable antennas are very promising for future generations of mobile communications, where broad frequency coverage will be required increasingly. This work describes the design of small high-Quality factor (Q) tunable antennas based on Micro-Electro-Mechanical Systems (MEMS), which are capable...... of operation in the frequency ranges 600 - 960 MHz and 1710 - 2690 MHz. Some aspects of high-Q tunable antennas are investigated through experimental measurements and the result are presented. Results show that more than -30 dB of isolation can be achieved between the Transmit (Tx) and Receive (Rx) antennas...

Electronics and Sensor Study with the OKI SOI process

CERN Document Server

Arai, Yasuo

2007-01-01

While the SOI (Silicon-On-Insulator) device concept is very old, commercialization of the technology is relatively new and growing rapidly in high-speed processor and lowpower applications. Furthermore, features such as latch-up immunity, radiation hardness and high-temperature operation are very attractive in high energy and space applications. Once high-quality bonded SOI wafers became available in the late 90s, it opened up the possibility to get two different kinds of Si on a single wafer. This makes it possible to realize an ideal pixel detector; pairing a fully-depleted radiation sensor with CMOS circuitry in an industrial technology. In 2005 we started Si pixel R&D with OKI Electric Ind. Co., Ltd. which is the first market supplier of Fully-Depleted SOI products. We have developed processes for p+/n+ implants to the substrate and for making connections between the implants and circuits in the OKI 0.15μm FD-SOI CMOS process. We have preformed two Multi Project Wafer (MPW) runs using this SOI proces...

Automotive SOI-BCD Technology Using Bonded Wafers

International Nuclear Information System (INIS)

Himi, H.; Fujino, S.

2008-01-01

The SOI-BCD device is excelling in high temperature operation and noise immunity because the integrated elements can be electrically separated by dielectric isolation. We have promptly paid attention to this feature and have concentrated to develop SOI-BCD devices seeking to match the automotive requirement. In this paper, the feature technologies specialized for automotive SOI-BCD devices, such as buried N + layer for impurity gettering and noise shielding, LDMOS with improved ESD robustness, crystal defect-less process, and wafer direct bonding through the amorphous layer for intelligent power IC are introduced.

Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

2016-01-01

We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

Science.gov (United States)

Ramezani, Zeinab; Orouji, Ali A.

2016-10-01

For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

Enabling MEMS technologies for communications systems

Science.gov (United States)

Lubecke, Victor M.; Barber, Bradley P.; Arney, Susanne

2001-11-01

Modern communications demands have been steadily growing not only in size, but sophistication. Phone calls over copper wires have evolved into high definition video conferencing over optical fibers, and wireless internet browsing. The technology used to meet these demands is under constant pressure to provide increased capacity, speed, and efficiency, all with reduced size and cost. Various MEMS technologies have shown great promise for meeting these challenges by extending the performance of conventional circuitry and introducing radical new systems approaches. A variety of strategic MEMS structures including various cost-effective free-space optics and high-Q RF components are described, along with related practical implementation issues. These components are rapidly becoming essential for enabling the development of progressive new communications systems technologies including all-optical networks, and low cost multi-system wireless terminals and basestations.

Mask-less deposition of Au–SnO_2 nanocomposites on CMOS MEMS platform for ethanol detection

International Nuclear Information System (INIS)

Santra, S; Sinha, A K; Ray, S K; De Luca, A; Udrea, F; Ali, S Z; Gardner, J W; Guha, P K

2016-01-01

Here we report on the mask-less deposition of Au–SnO_2 nanocomposites with a silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) micro electro mechanical system (MEMS) platform through the use of dip pen nanolithography (DPN) to create a low-cost ethanol sensor. MEMS technology is used in order to achieve low power consumption, by the employment of a membrane structure formed using deep reactive ion etching technique. The device consists of an embedded tungsten micro-heater with gold interdigitated electrodes on top of the SOI membrane. The tungsten micro-heater is used to raise the membrane temperature up to its operating temperature and the electrodes are used to measure the resistance of the nanocomposite sensing layer. The CMOS MEMS devices have high electro-thermal efficiency, with 8.2 °C temperature increase per mW power of consumption. The sensing material (Au–SnO_2 nanocomposite) was synthesised starting from SnO nanoplates, then Au nanoparticles were attached chemically to the surface of SnO nanoplates, finally the mixture was heated at 700 °C in an oven in air for 4 h. This composite material was sonicated for 2 h in terpineol to make a viscous homogeneous slurry and then ‘written’ directly across the electrode area using the DPN technique without any mask. The devices were characterised by exposure to ethanol vapour in humid air in the concentration range of 100–1000 ppm. The sensitivity varied from 1.2 to 0.27 ppm"−"1 for 100–1000 ppm of ethanol at 10% relative humid air. Selectivity measurements showed that the sensors were selective towards ethanol when they were exposed to acetone and toluene. (paper)

Characterizing SOI Wafers By Use Of AOTF-PHI

Science.gov (United States)

Cheng, Li-Jen; Li, Guann-Pyng; Zang, Deyu

1995-01-01

Developmental nondestructive method of characterizing layers of silicon-on-insulator (SOI) wafer involves combination of polarimetric hyperspectral imaging by use of acousto-optical tunable filters (AOTF-PHI) and computational resources for extracting pertinent data on SOI wafers from polarimetric hyperspectral images. Offers high spectral resolution and both ease and rapidity of optical-wavelength tuning. Further efforts to implement all of processing of polarimetric spectral image data in special-purpose hardware for sake of procesing speed. Enables characterization of SOI wafers in real time for online monitoring and adjustment of production. Also accelerates application of AOTF-PHI to other applications in which need for high-resolution spectral imaging, both with and without polarimetry.

VCSELs and silicon light sources exploiting SOI grating mirrors

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2012-01-01

In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI...... the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well...

PZT-on-silicon RF-MEMS Lamb wave resonators and filters

NARCIS (Netherlands)

Yagubizade, H.

2013-01-01

Lamb-wave piezoelectric RF-MEMS resonators have demonstrated promising performance, such as low motional impedance and high Q-factor. Lamb-wave resonators are still in the perfectioning state and therefore there is a great demand for further understanding of various issues such as reducing the

A Fully Symmetric and Completely Decoupled MEMS-SOI Gyroscope

Directory of Open Access Journals (Sweden)

Abdelhameed SHARAF

2011-04-01

Full Text Available This paper introduces a novel MEMS gyroscope that is capable of exciting the drive mode differentially. The structure also decouples the drive and sense modes via an intermediate mass and decoupling beams. Both drive and sense modes are fully differential enabling control over the zero-rate-output for the former and maximizing output sensitivity using a bridge circuit for the latter. Further, the structure is fully symmetric about the x- and y- axes which results in minimizing the temperature sensitivity problem. Complete analytical analysis based on the equations of motion was performed and verified using two commercially available finite element software packages. Results from both methods are in good agreement. The analysis of the sensor shows an electrical sensitivity of 1.14 (mV/(º/s. The gyroscope was fabricated using single mask and deep reactive ion etching. The measurement of the resonance frequency performed showing a good agreement with the analytical and numerical analysis.

FinFET and UTBB for RF SOI communication systems

Science.gov (United States)

Raskin, Jean-Pierre

2016-11-01

Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

KAUST Repository

Diab, Amer El Hajj

2014-12-01

We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.

Electrostatic MEMS devices with high reliability

Science.gov (United States)

Goldsmith, Charles L; Auciello, Orlando H; Sumant, Anirudha V; Mancini, Derrick C; Gudeman, Chris; Sampath, Suresh; Carlilse, John A; Carpick, Robert W; Hwang, James

2015-02-24

The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

Low-power crystal and MEMS oscillators the experience of watch developments

CERN Document Server

Eric Vittoz

2010-01-01

Electronic oscillators using an electromechanical device as a frequency reference are irreplaceable components of systems-on-chip for time-keeping, carrier frequency generation and digital clock generation. With their excellent frequency stability and very large quality factor Q, quartz crystal resonators have been the dominant solution for more than 70 years. But new possibilities are now offered by micro-electro-mechanical (MEM) resonators, that have a qualitatively identical equivalent electrical circuit. Low-Power Crystal and MEMS Oscillators concentrates on the analysis and design of the most important schemes of integrated oscillator circuits. It explains how these circuits can be optimized by best exploiting the very high Q of the resonator to achieve the minimum power consumption compatible with the requirements on frequency stability and phase noise. The author has 40 years of experience in designing very low-power, high-performance quartz oscillators for watches and other battery operated systems an...

Standard semiconductor packaging for high-reliability low-cost MEMS applications

Science.gov (United States)

Harney, Kieran P.

2005-01-01

Microelectronic packaging technology has evolved over the years in response to the needs of IC technology. The fundamental purpose of the package is to provide protection for the silicon chip and to provide electrical connection to the circuit board. Major change has been witnessed in packaging and today wafer level packaging technology has further revolutionized the industry. MEMS (Micro Electro Mechanical Systems) technology has created new challenges for packaging that do not exist in standard ICs. However, the fundamental objective of MEMS packaging is the same as traditional ICs, the low cost and reliable presentation of the MEMS chip to the next level interconnect. Inertial MEMS is one of the best examples of the successful commercialization of MEMS technology. The adoption of MEMS accelerometers for automotive airbag applications has created a high volume market that demands the highest reliability at low cost. The suppliers to these markets have responded by exploiting standard semiconductor packaging infrastructures. However, there are special packaging needs for MEMS that cannot be ignored. New applications for inertial MEMS devices are emerging in the consumer space that adds the imperative of small size to the need for reliability and low cost. These trends are not unique to MEMS accelerometers. For any MEMS technology to be successful the packaging must provide the basic reliability and interconnection functions, adding the least possible cost to the product. This paper will discuss the evolution of MEMS packaging in the accelerometer industry and identify the main issues that needed to be addressed to enable the successful commercialization of the technology in the automotive and consumer markets.

Operational characterization of CSFH MEMS technology based hinges

Science.gov (United States)

Crescenzi, Rocco; Balucani, Marco; Belfiore, Nicola Pio

2018-05-01

Progress in MEMS technology continuously stimulates new developments in the mechanical structure of micro systems, such as, for example, the concept of so-called CSFH (conjugate surfaces flexural hinge), which makes it possible, simultaneously, to minimize the internal stresses and to increase motion range and robustness. Such a hinge may be actuated by means of a rotary comb-drive, provided that a proper set of simulations and tests are capable to assess its feasibility. In this paper, a CSFH has been analyzed with both theoretical and finite element (FEM) methods, in order to obtain the relation between voltage and generated torque. The FEM model considers also the fringe effect on the comb drive finger. Electromechanical couple-field analysis is performed by means of both direct and load transfer methods. Experimental tests have been also performed on a CSFH embedded in a MEMS prototype, which has been fabricated starting from a SOI wafer and using D-RIE (deep reactive ion etching). Results showed that CSFH performs better than linear flexure hinges in terms of larger rotations and less stress for given applied voltage.

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.

2014-06-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2016-01-01

: off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

Propriété de soi et indifférence morale du rapport à soi

Directory of Open Access Journals (Sweden)

Nathalie Maillard Romagnoli

2011-05-01

Full Text Available Je m’interroge dans cet article sur les implications du principe libertarien de la pleine propriété de soi sur la question du rapport moral à soi-même. À travers le principe de la pleine propriété de soi, les libertariens défendent la liberté entière de chacun de vivre comme il l���entend, pourvu que les droits des autres soient respectés. Apparemment, ce principe n’a pas grand-chose à nous dire sur ce que nous sommes moralement autorisés à nous faire à nous-mêmes ou non. Certains libertariens, comme Vallentyne, soutiennent toutefois que le principe de la pleine propriété de soi est incompatible avec l’existence de devoirs envers soi. La pleine propriété de soi impliquerait l’indifférence morale du rapport à soi. Je soutiens dans cet article que le principe de la pleine propriété de soi n’implique pas que ce que nous nous faisons à nous-mêmes soit moralement indifférent. Je veux aussi montrer que même si les libertariens, et en particulier Vallentyne, soutiennent la thèse de l’indifférence morale du rapport à soi, celle-ci n’est pas liée à la thèse de la pleine propriété de soi, mais bien plutôt à leur subjectivisme moral.ABSTRACTI ask in this article what the libertarian principle of full self-ownership has to say about volontary actions directed towards oneself. Through the principle of full self-ownership, libertarians defend the persons’ individual liberty to live as they choose to do, as long as they don’t infringe on the rights of others. Apparently, this principle doesn’t have much to say about what we are morally allowed to do to ourselves or not. Some libertarians, however, like Vallentyne, maintain that, if we have duties or obligations to ourselves, then we cannot be full self-owner. In this perspective, full self-ownership would imply that what we do to ourselves is morally indifferent. I want to show in this article that full self-ownership is compatible with the

MEMS capacitive accelerometer-based middle ear microphone.

Science.gov (United States)

Young, Darrin J; Zurcher, Mark A; Semaan, Maroun; Megerian, Cliff A; Ko, Wen H

2012-12-01

The design, implementation, and characterization of a microelectromechanical systems (MEMS) capacitive accelerometer-based middle ear microphone are presented in this paper. The microphone is intended for middle ear hearing aids as well as future fully implantable cochlear prosthesis. Human temporal bones acoustic response characterization results are used to derive the accelerometer design requirements. The prototype accelerometer is fabricated in a commercial silicon-on-insulator (SOI) MEMS process. The sensor occupies a sensing area of 1 mm × 1 mm with a chip area of 2 mm × 2.4 mm and is interfaced with a custom-designed low-noise electronic IC chip over a flexible substrate. The packaged sensor unit occupies an area of 2.5 mm × 6.2 mm with a weight of 25 mg. The sensor unit attached to umbo can detect a sound pressure level (SPL) of 60 dB at 500 Hz, 35 dB at 2 kHz, and 57 dB at 8 kHz. An improved sound detection limit of 34-dB SPL at 150 Hz and 24-dB SPL at 500 Hz can be expected by employing start-of-the-art MEMS fabrication technology, which results in an articulation index of approximately 0.76. Further micro/nanofabrication technology advancement is needed to enhance the microphone sensitivity for improved understanding of normal conversational speech.

High-throughput anisotropic plasma etching of polyimide for MEMS

International Nuclear Information System (INIS)

Bliznetsov, Vladimir; Manickam, Anbumalar; Ranganathan, Nagarajan; Chen, Junwei

2011-01-01

This note describes a new high-throughput process of polyimide etching for the fabrication of MEMS devices with an organic sacrificial layer approach. Using dual frequency superimposed capacitively coupled plasma we achieved a vertical profile of polyimide with an etching rate as high as 3.5 µm min −1 . After the fabrication of vertical structures in a polyimide material, additional steps were performed to fabricate structural elements of MEMS by deposition of a SiO 2 layer and performing release etching of polyimide. (technical note)

A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

Energy Technology Data Exchange (ETDEWEB)

Hemperek, Tomasz, E-mail: hemperek@uni-bonn.de; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

2015-10-01

An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

Technology development for SOI monolithic pixel detectors

International Nuclear Information System (INIS)

Marczewski, J.; Domanski, K.; Grabiec, P.; Grodner, M.; Jaroszewicz, B.; Kociubinski, A.; Kucharski, K.; Tomaszewski, D.; Caccia, M.; Kucewicz, W.; Niemiec, H.

2006-01-01

A monolithic detector of ionizing radiation has been manufactured using silicon on insulator (SOI) wafers with a high-resistivity substrate. In our paper the integration of a standard 3 μm CMOS technology, originally designed for bulk devices, with fabrication of pixels in the bottom wafer of a SOI substrate is described. Both technological sequences have been merged minimizing thermal budget and providing suitable properties of all the technological layers. The achieved performance proves that fully depleted monolithic active pixel matrix might be a viable option for a wide spectrum of future applications

Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications

Science.gov (United States)

Kähler, Julian; Döring, Lutz; Merzsch, Stephan; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2011-06-01

For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-njunction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 +/- 0.1) μV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n- SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling.

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

Science.gov (United States)

Yang, Eui-Hyeok; Wiberg, Dean

2003-01-01

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

A high efficiency lateral light emitting device on SOI

NARCIS (Netherlands)

Hoang, T.; Le Minh, P.; Holleman, J.; Zieren, V.; Goossens, M.J.; Schmitz, Jurriaan

2005-01-01

The infrared light emission of lateral p/sup +/-p-n/sup +/ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase

A monolithic active pixel sensor for ionizing radiation using a 180 nm HV-SOI process

Energy Technology Data Exchange (ETDEWEB)

Hemperek, Tomasz; Kishishita, Tetsuichi; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn, Bonn (Germany)

2016-07-01

An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-180 nm High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. Standard FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to trapped charge in the buried oxide layer and charged interface states created at the silicon oxide boundaries (back gate effect). The X-FAB 180 nm HV-SOI technology offers an additional isolation using a deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection. The design and measurement results from first prototypes are presented including radiation tolerance to total ionizing dose and charge collection properties of neutron irradiated samples.

A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage

International Nuclear Information System (INIS)

Luo Xiaorong; Zhang Wei; Zhang Bo; Li Zhaoji; Yang Shouguo; Zhan Zhan; Fu Daping

2008-01-01

A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (R on ) for the ST SOI is obtained due to the variable thickness SOI layer

Method to improve commercial bonded SOI material

Science.gov (United States)

Maris, Humphrey John; Sadana, Devendra Kumar

2000-07-11

A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.

BurstMem: A High-Performance Burst Buffer System for Scientific Applications

Energy Technology Data Exchange (ETDEWEB)

Wang, Teng [Auburn University, Auburn, Alabama; Oral, H Sarp [ORNL; Wang, Yandong [Auburn University, Auburn, Alabama; Settlemyer, Bradley W [ORNL; Atchley, Scott [ORNL; Yu, Weikuan [Auburn University, Auburn, Alabama

2014-01-01

The growth of computing power on large-scale sys- tems requires commensurate high-bandwidth I/O system. Many parallel file systems are designed to provide fast sustainable I/O in response to applications soaring requirements. To meet this need, a novel system is imperative to temporarily buffer the bursty I/O and gradually flush datasets to long-term parallel file systems. In this paper, we introduce the design of BurstMem, a high- performance burst buffer system. BurstMem provides a storage framework with efficient storage and communication manage- ment strategies. Our experiments demonstrate that BurstMem is able to speed up the I/O performance of scientific applications by up to 8.5 on leadership computer systems.

SOI technology for power management in automotive and industrial applications

Science.gov (United States)

Stork, Johannes M. C.; Hosey, George P.

2017-02-01

Semiconductor on Insulator (SOI) technology offers an assortment of opportunities for chip manufacturers in the Power Management market. Recent advances in the automotive and industrial markets, along with emerging features, the increasing use of sensors, and the ever-expanding "Internet of Things" (IoT) are providing for continued growth in these markets while also driving more complex solutions. The potential benefits of SOI include the ability to place both high-voltage and low-voltage devices on a single chip, saving space and cost, simplifying designs and models, and improving performance, thereby cutting development costs and improving time to market. SOI also offers novel new approaches to long-standing technologies.

Universal trench design method for a high-voltage SOI trench LDMOS

Institute of Scientific and Technical Information of China (English)

Hu Xiarong; Zhang Bo; Luo Xiaorong; Li Zhaoji

2012-01-01

The design method for a high-voltage SOl trench LDMOS for various trench permittivities,widths and depths is introduced.A universal method for efficient design is presented for the first time,taking the trade-off between breakdown voltage (BV) and specific on-resistance (Rs,on) into account.The high-k (relative permittivity)dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench.An SOI LDMOS with a vacuum trench in the drift region is also discussed.Simulation results show that the high FOM BV2/Rs,on can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.

A MEMS torsion magnetic sensor with reflective blazed grating integration

International Nuclear Information System (INIS)

Long, Liang; Zhong, Shaolong

2016-01-01

A novel magnetic sensor based on a permanent magnet and blazed grating is presented in this paper. The magnetic field is detected by measuring the diffracted wavelength of the blazed grating which is changed by the torsion motion of a torsion sensitive micro-electromechanical system (MEMS) structure with a permanent magnet attached. A V-shape grating structure is obtained by wet etching on a (1 0 0) SOI substrate. When the magnet is magnetized in different directions, the in-plane or out-of-plane magnetic field is detected by a sensor. The MEMS magnetic sensor with a permanent magnet is fabricated after analytical design and bulk micromachining processes. The magnetic-sensing capability of the sensor is tested by fiber-optic detection system. The result shows the sensitivities of the in-plane and out-of-plane magnetic fields are 3.6 pm μ T −1 and 5.7 pm μ T −1 , respectively. Due to utilization of the permanent magnet and fiber-optic detection, the sensor shows excellent capability of covering the high-resolution detection of low-frequency signals. In addition, the sensitive direction of the magnetic sensor can be easily switched by varying the magnetized direction of the permanent magnet, which offers a simple way to achieve tri-axis magnetic sensor application. (paper)

High Speed Magnetostrictive MEMS Actuated Mirror Deflectors, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — The main goal of this proposal is to develop high speed magnetostrictive and MEMS actuators for rapidly deflecting or deforming mirrors. High speed, light-weight,...

Calibration of High Frequency MEMS Microphones

Science.gov (United States)

Shams, Qamar A.; Humphreys, William M.; Bartram, Scott M.; Zuckewar, Allan J.

2007-01-01

Understanding and controlling aircraft noise is one of the major research topics of the NASA Fundamental Aeronautics Program. One of the measurement technologies used to acquire noise data is the microphone directional array (DA). Traditional direction array hardware, consisting of commercially available condenser microphones and preamplifiers can be too expensive and their installation in hard-walled wind tunnel test sections too complicated. An emerging micro-machining technology coupled with the latest cutting edge technologies for smaller and faster systems have opened the way for development of MEMS microphones. The MEMS microphone devices are available in the market but suffer from certain important shortcomings. Based on early experiments with array prototypes, it has been found that both the bandwidth and the sound pressure level dynamic range of the microphones should be increased significantly to improve the performance and flexibility of the overall array. Thus, in collaboration with an outside MEMS design vendor, NASA Langley modified commercially available MEMS microphone as shown in Figure 1 to meet the new requirements. Coupled with the design of the enhanced MEMS microphones was the development of a new calibration method for simultaneously obtaining the sensitivity and phase response of the devices over their entire broadband frequency range. Over the years, several methods have been used for microphone calibration. Some of the common methods of microphone calibration are Coupler (Reciprocity, Substitution, and Simultaneous), Pistonphone, Electrostatic actuator, and Free-field calibration (Reciprocity, Substitution, and Simultaneous). Traditionally, electrostatic actuators (EA) have been used to characterize air-condenser microphones for wideband frequency ranges; however, MEMS microphones are not adaptable to the EA method due to their construction and very small diaphragm size. Hence a substitution-based, free-field method was developed to

A Widely-Accessible Distributed MEMS Processing Environment. The MEMS Exchange Program

Science.gov (United States)

2012-10-29

all of these patterns in advance, we made a new cost model, called the Python Code cost model, which utilizes the power of a high level programming ...document entitled “The Beginners Guide to MEMS Processing” on the MEMSNet and MEMS Exchange The MEMS Exchange Program Final Technical Report October 29...from the Government is absolutely necessary. As said The MEMS Exchange Program Final Technical Report October 29, 2012 Page 57 of 58 before

Performance analysis of SOI MOSFET with rectangular recessed channel

Science.gov (United States)

Singh, M.; Mishra, S.; Mohanty, S. S.; Mishra, G. P.

2016-03-01

In this paper a two dimensional (2D) rectangular recessed channel-silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed.

RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

KAUST Repository

Elshurafa, Amro M.

2012-07-23

This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.

Performance analysis of SOI MOSFET with rectangular recessed channel

International Nuclear Information System (INIS)

Singh, M; Mishra, G P; Mishra, S; Mohanty, S S

2016-01-01

In this paper a two dimensional (2D) rectangular recessed channel–silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed. (paper)

BUSFET -- A radiation-hardened SOI transistor

International Nuclear Information System (INIS)

Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

1999-01-01

The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, the authors propose a partially-depleted SOI transistor structure for mitigating the effects of trapped charge in the buried oxide on radiation hardness. They call this structure the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU or dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration, and the depth of the source. 3-D simulations show that for a body doping concentration of 10 18 cm -3 , a drain bias of 3 V, and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3 x 10 17 cm -3 , a thicker silicon film (300 nm) must be used

BUSFET - A Novel Radiation-Hardened SOI Transistor

International Nuclear Information System (INIS)

Dodd, P.E.; Draper, B.L.; Schwank, J.R.; Shaneyfelt, M.R.

1999-01-01

A partially-depleted SOI transistor structure has been designed that does not require the use of specially-processed hardened buried oxides for total-dose hardness and maintains the intrinsic SEU and dose rate hardness advantages of SOI technology

Characterization of SOI monolithic detector system

Science.gov (United States)

Álvarez-Rengifo, P. L.; Soung Yee, L.; Martin, E.; Cortina, E.; Ferrer, C.

2013-12-01

A monolithic active pixel sensor for charged particle tracking was developed. This research is performed within the framework of an R&D project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology) whose aim is to evaluate the feasibility of developing a Monolithic Active Pixel Sensor (MAPS) with Silicon-on-Insulator (SOI) technology. Two chips were fabricated: TRAPPISTe-1 and TRAPPISTe-2. TRAPPISTe-1 was produced at the WINFAB facility at the Université catholique de Louvain (UCL), Belgium, in a 2 μm fully depleted (FD-SOI) CMOS process. TRAPPISTe-2 was fabricated with the LAPIS 0.2 μm FD-SOI CMOS process. The electrical characterization on single transistor test structures and of the electronic readout for the TRAPPISTe series of monolithic pixel detectors was carried out. The behavior of the prototypes’ electronics as a function of the back voltage was studied. Results showed that both readout circuits exhibited sensitivity to the back voltage. Despite this unwanted secondary effect, the responses of TRAPPISTe-2 amplifiers can be improved by a variation in the circuit parameters.

A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

Science.gov (United States)

Ghaffari, Majid; Orouji, Ali A.

2018-06-01

Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

Design and Fabrication of High Gain Multi-element Multi-segment Quarter-sector Cylindrical Dielectric Resonator Antenna

Science.gov (United States)

Ranjan, Pinku; Gangwar, Ravi Kumar

2017-12-01

A novel design and analysis of quarter cylindrical dielectric resonator antenna (q-CDRA) with multi-element and multi-segment (MEMS) approach has been presented. The MEMS q-CDRA has been designed by splitting four identical quarters from a solid cylinder and then multi-segmentation approach has been utilized to design q-CDRA. The proposed antenna has been designed for enhancement in bandwidth as well as for high gain. For bandwidth enhancement, multi-segmentation method has been explained for the selection of dielectric constant of materials. The performance of the proposed MEMS q-CDRA has been demonstrated with design guideline of MEMS approach. To validate the antenna performance, three segments q-CDRA has been fabricated and analyzed practically. The simulated results have been in good agreement with measured one. The MEMS q-CDRA has wide impedance bandwidth (|S11|≤-10 dB) of 133.8 % with monopole-like radiation pattern. The proposed MEMS q-CDRA has been operating at TM01δ mode with the measured gain of 6.65 dBi and minimum gain of 4.5 dBi in entire operating frequency band (5.1-13.7 GHz). The proposed MEMS q-CDRA may find appropriate applications in WiMAX and WLAN band.

RF-MEMS capacitive switches with high reliability

Science.gov (United States)

Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

2013-09-03

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

Science.gov (United States)

Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yasuki; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shunsuke; Kochi, Chihiro; Yamamoto, Keita

2016-07-01

We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below ˜ 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to ˜ 200 \\upmu m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

A Study on Measurement Variations in Resonant Characteristics of Electrostatically Actuated MEMS Resonators

Directory of Open Access Journals (Sweden)

Faisal Iqbal

2018-04-01

Full Text Available Microelectromechanical systems (MEMS resonators require fast, accurate, and cost-effective testing for mass production. Among the different test methods, frequency domain analysis is one of the easiest and fastest. This paper presents the measurement uncertainties in electrostatically actuated MEMS resonators, using frequency domain analysis. The influence of the applied driving force was studied to evaluate the measurement variations in resonant characteristics, such as the natural frequency and the quality factor of the resonator. To quantify the measurement results, measurement system analysis (MSA was performed using the analysis of variance (ANOVA method. The results demonstrate that the resonant frequency ( f r is mostly affected by systematic error. However, the quality (Q factor strongly depends on the applied driving force. To reduce the measurement variations in Q factor, experiments were carried out to study the influence of DC and/or AC driving voltages on the resonator. The results reveal that measurement uncertainties in the quality factor were high for a small electrostatic force.

BUSFET - A Novel Radiation-Hardened SOI Transistor

International Nuclear Information System (INIS)

Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

1999-01-01

The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, we propose a new partially-depleted SOI transistor structure that we call the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU and dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration and the depth of the source. 3-D simulations show that for a doping concentration of 10 18 cm -3 and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3x10 17 cm -3 , a thicker silicon film (300 nm) must be used

Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

Science.gov (United States)

Pavanello, Marcelo Antonio; de Souza, Michelly; Ribeiro, Thales Augusto; Martino, João Antonio; Flandre, Denis

2016-11-01

This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

Science.gov (United States)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

A novel δ-doped partially insulated dopant-segregated Schottky barrier SOI MOSFET for analog/RF applications

International Nuclear Information System (INIS)

Patil, Ganesh C; Qureshi, S

2011-01-01

In this paper, a comparative analysis of single-gate dopant-segregated Schottky barrier (DSSB) SOI MOSFET and raised source/drain ultrathin-body SOI MOSFET (RSD UTB) has been carried out to explore the thermal efficiency, scalability and analog/RF performance of these devices. A novel p-type δ-doped partially insulated DSSB SOI MOSFET (DSSB Pi-OX-δ) has been proposed to reduce the self-heating effect and to improve the high-frequency performance of DSSB SOI MOSFET over RSD UTB. The improved analog/RF figures of merit such as transconductance, transconductance generation factor, unity-gain frequency, maximum oscillation frequency, short-circuit current gain and unilateral power gain in DSSB Pi-OX-δ MOSFET show the suitability of this device for analog/RF applications. The reduced drain-induced barrier lowering, subthreshold swing and parasitic capacitances also make this device highly scalable. By using mixed-mode simulation capability of MEDICI simulator a cascode amplifier has been implemented using all the structures (RSD UTB, DSSB SOI and DSSB Pi-OX-δ MOSFETs). The results of this implementation show that the gain-bandwidth product in the case of DSSB Pi-OX-δ MOSFET has improved by 50% as compared to RSD UTB and by 20% as compared to DSSB SOI MOSFET. The detailed fabrication flow of DSSB Pi-OX-δ MOSFET has been proposed which shows that with the bare minimum of steps the performance of DSSB SOI MOSFET can be improved significantly in comparison to RSD UTB

Design of a MEMS-Based Oscillator Using 180nm CMOS Technology.

Science.gov (United States)

Roy, Sukanta; Ramiah, Harikrishnan; Reza, Ahmed Wasif; Lim, Chee Cheow; Ferrer, Eloi Marigo

2016-01-01

Micro-electro mechanical system (MEMS) based oscillators are revolutionizing the timing industry as a cost effective solution, enhanced with more features, superior performance and better reliability. The design of a sustaining amplifier was triggered primarily to replenish MEMS resonator's high motion losses due to the possibility of their 'system-on-chip' integrated circuit solution. The design of a sustaining amplifier observing high gain and adequate phase shift for an electrostatic clamp-clamp (C-C) beam MEMS resonator, involves the use of an 180nm CMOS process with an unloaded Q of 1000 in realizing a fixed frequency oscillator. A net 122dBΩ transimpedance gain with adequate phase shift has ensured 17.22MHz resonant frequency oscillation with a layout area consumption of 0.121 mm2 in the integrated chip solution, the sustaining amplifier draws 6.3mW with a respective phase noise of -84dBc/Hz at 1kHz offset is achieved within a noise floor of -103dBC/Hz. In this work, a comparison is drawn among similar design studies on the basis of a defined figure of merit (FOM). A low phase noise of 1kHz, high figure of merit and the smaller size of the chip has accredited to the design's applicability towards in the implementation of a clock generative integrated circuit. In addition to that, this complete silicon based MEMS oscillator in a monolithic solution has offered a cost effective solution for industrial or biomedical electronic applications.

Design of a MEMS-Based Oscillator Using 180nm CMOS Technology.

Directory of Open Access Journals (Sweden)

Sukanta Roy

Full Text Available Micro-electro mechanical system (MEMS based oscillators are revolutionizing the timing industry as a cost effective solution, enhanced with more features, superior performance and better reliability. The design of a sustaining amplifier was triggered primarily to replenish MEMS resonator's high motion losses due to the possibility of their 'system-on-chip' integrated circuit solution. The design of a sustaining amplifier observing high gain and adequate phase shift for an electrostatic clamp-clamp (C-C beam MEMS resonator, involves the use of an 180nm CMOS process with an unloaded Q of 1000 in realizing a fixed frequency oscillator. A net 122dBΩ transimpedance gain with adequate phase shift has ensured 17.22MHz resonant frequency oscillation with a layout area consumption of 0.121 mm2 in the integrated chip solution, the sustaining amplifier draws 6.3mW with a respective phase noise of -84dBc/Hz at 1kHz offset is achieved within a noise floor of -103dBC/Hz. In this work, a comparison is drawn among similar design studies on the basis of a defined figure of merit (FOM. A low phase noise of 1kHz, high figure of merit and the smaller size of the chip has accredited to the design's applicability towards in the implementation of a clock generative integrated circuit. In addition to that, this complete silicon based MEMS oscillator in a monolithic solution has offered a cost effective solution for industrial or biomedical electronic applications.

Le soi et l’estime de soi chez l’enfant: Une revue systématique de la littérature

OpenAIRE

Pinto, Alexandra Maria Pereira Inácio Sequeira; Gatinho, Ana Rita dos Santos; Tereno, Susana; Veríssimo, Manuela

2016-01-01

Cette étude vise : a) à analyser les différentes méthodes utilisées pour l’étude du Soi et chez les enfants, en ce que concerne sa qualité et son potentiel et b) à synthétiser les résultats déjà obtenus en termes de Soi/d’estime de soi/d’autoconcept, pour les enfants en âge préscolaire. Après avoir établi des critères rigoureux d’inclusion et d’exclusion, 33 articles ont été sélectionnés, dans plusieurs bases de données, nationales et international...

High Efficiency Optical MEMS by the Integration of Photonic Lattices with Surface MEMS

Energy Technology Data Exchange (ETDEWEB)

FLEMING, JAMES G.; LIN, SHAWN-YU; MANI, SEETHAMBAL S.; RODGERS, M. STEVEN; DAGEL, DARYL J.

2002-11-01

This report outlines our work on the integration of high efficiency photonic lattice structures with MEMS (MicroElectroMechanical Systems). The simplest of these structures were based on 1-D mirror structures. These were integrated into a variety of devices, movable mirrors, switchable cavities and finally into Bragg fiber structures which enable the control of light in at least 2 dimensions. Of these devices, the most complex were the Bragg fibers. Bragg fibers consist of hollow tubes in which light is guided in a low index media (air) and confined by surrounding Bragg mirror stacks. In this work, structures with internal diameters from 5 to 30 microns have been fabricated and much larger structures should also be possible. We have demonstrated the fabrication of these structures with short wavelength band edges ranging from 400 to 1600nm. There may be potential applications for such structures in the fields of integrated optics and BioMEMS. We have also looked at the possibility of waveguiding in 3 dimensions by integrating defects into 3-dimensional photonic lattice structures. Eventually it may be possible to tune such structures by mechanically modulating the defects.

Compact Si-based asymmetric MZI waveguide on SOI as a thermo-optical switch

Science.gov (United States)

Rizal, C. S.; Niraula, B.

2018-03-01

A compact low power consuming asymmetric MZI based optical modulator with fast response time has been proposed on SOI platform. The geometrical and performance characteristics were analyzed in depth and optimized using coupled mode analysis and FDTD simulation tools, respectively. It was tested with and without implementation of thermo-optic (TO) effect. The device showed good frequency modulating characteristics when tested without the implementation of the TO effect. The fabricated device showed quality factor, Q ≈ 10,000, and this value is comparable to the Q of the device simulated with 25% transmission loss, showing FSR of 0.195 nm, FWHM ≈ 0.16 nm, and ER of 13 dB. With TO effect, it showed temperature sensitivity of 0.01 nm/°C and FSR of 0.19 nm. With the heater length of 4.18 mm, the device required 0.26 mW per π shift power with a switching voltage of 0.309 V, response time of 10 μ, and figure-of-merit of 2.6 mW μs. All of these characteristics make this device highly attractive for use in integrated Si photonics network as optical switch and wavelength modulator.

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

Science.gov (United States)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Spiral-Shaped Piezoelectric MEMS Cantilever Array for Fully Implantable Hearing Systems

Directory of Open Access Journals (Sweden)

Péter Udvardi

2017-10-01

Full Text Available Fully implantable, self-powered hearing aids with no external unit could significantly increase the life quality of patients suffering severe hearing loss. This highly demanding concept, however, requires a strongly miniaturized device which is fully implantable in the middle/inner ear and includes the following components: frequency selective microphone or accelerometer, energy harvesting device, speech processor, and cochlear multielectrode. Here we demonstrate a low volume, piezoelectric micro-electromechanical system (MEMS cantilever array which is sensitive, even in the lower part of the voice frequency range (300–700 Hz. The test array consisting of 16 cantilevers has been fabricated by standard bulk micromachining using a Si-on-Insulator (SOI wafer and aluminum nitride (AlN as a complementary metal-oxide-semiconductor (CMOS and biocompatible piezoelectric material. The low frequency and low device footprint are ensured by Archimedean spiral geometry and Si seismic mass. Experimentally detected resonance frequencies were validated by an analytical model. The generated open circuit voltage (3–10 mV is sufficient for the direct analog conversion of the signals for cochlear multielectrode implants.

Performance study of double SOI image sensors

Science.gov (United States)

Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

2018-02-01

Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

Croire en soi, croire en l'autre

Directory of Open Access Journals (Sweden)

Eugène Enriquez

2014-04-01

Full Text Available La croyance aux Dieux ou en un Dieu unique c'est-à-dire à l'incroyable est fort répandue et semble normale comme avoir confiance en soi et en l'autre. Mais croire en soi et en l'autre apparaît étonnant car ce serait se mettre sur le même rang que Dieu. Effectivement l'homme essaie de ressembler à Dieu. Mais à Dieu blessé, faillible, s'interrogeant constamment. Ce Dieu nouveau est un "sujet amoureux" amoureux de soi, de l'autre et de la vie. Il se conduit comme un "Dichter" assumant une responsabilité morale. Il est difficile, voire souvent impossible de se situer comme un "Dichter". C'est pourtant la tâche à laquelle l'homme contemporain est confronté.

Sputtered highly oriented PZT thin films for MEMS applications

Science.gov (United States)

Kalpat, Sriram S.

Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

MEMS cost analysis from laboratory to industry

CERN Document Server

Freng, Ron Lawes

2016-01-01

The World of MEMS; Chapter 2: Basic Fabrication Processes; Chapter 3: Surface Microengineering. High Aspect Ratio Microengineering; Chapter 5: MEMS Testing; Chapter 6: MEMS Packaging. Clean Rooms, Buildings and Plant; Chapter 8: The MEMSCOST Spreadsheet; Chapter 9: Product Costs - Accelerometers. Product Costs - Microphones. MEMS Foundries. Financial Reporting and Analysis. Conclusions.

Process optimization of a deep trench isolation structure for high voltage SOI devices

International Nuclear Information System (INIS)

Zhu Kuiying; Qian Qinsong; Zhu Jing; Sun Weifeng

2010-01-01

The process reasons for weak point formation of the deep trench on SOI wafers have been analyzed in detail. An optimized trench process is also proposed. It is found that there are two main reasons: one is over-etching laterally of the silicon on the surface of the buried oxide caused by a fringe effect; and the other is the slow growth rate of the isolation oxide in the concave silicon corner of the trench bottom. In order to improve the isolation performance of the deep trench, two feasible ways for optimizing the trench process are proposed. The improved process thickens the isolation oxide and rounds sharp silicon corners at their weak points, increasing the applied voltage by 15-20 V at the same leakage current. The proposed new trench isolation process has been verified in the foundry's 0.5-μm HV SOI technology. (semiconductor devices)

Test-beam results of a SOI pixel detector prototype

CERN Document Server

Bugiel, Roma; Dannheim, Dominik; Fiergolski, Adrian; Hynds, Daniel; Idzik, Marek; Kapusta, P; Kucewicz, Wojciech; Munker, Ruth Magdalena; Nurnberg, Andreas Matthias

2018-01-01

This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μm thick high-resistivity float- zone n-type (FZ-n) wafer. The pixel size is 30 μm × 30 μm and its readout uses a source- follower configuration. The test-beam data are analysed in order to compute the spatial resolution and detector efficiency. The analysis chain includes pedestal and noise calculation, cluster reconstruction, as well as alignment and η-correction for non-linear charge sharing. The results show a spatial resolution of about 4.3 μm.

Hybrid III-V/SOI Resonant Cavity Photodetector

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

2016-01-01

A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization.......A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

Scaling limits and reliability of SOI CMOS technology

International Nuclear Information System (INIS)

Ioannou, D E

2005-01-01

As bulk and PD-SOI CMOS approach their scaling limit (at gate length of around 50 nm), there is a renewed interest on FD-SOI because of its potential for continued scalability beyond this limit. In this review the performance and reliability of extremely scaled FD transistors are discussed and an attempt is made to identify critical areas for further research. (invited paper)

High volume fabrication of laser targets using MEMS techniques

International Nuclear Information System (INIS)

Spindloe, C; Tomlinson, S; Green, J; Booth, N.; Tolley, M K; Arthur, G; Hall, F; Potter, R; Kar, S; Higginbotham, A

2016-01-01

The latest techniques for the fabrication of high power laser targets, using processes developed for the manufacture of Micro-Electro-Mechanical System (MEMS) devices are discussed. These laser targets are designed to meet the needs of the increased shot numbers that are available in the latest design of laser facilities. Traditionally laser targets have been fabricated using conventional machining or coarse etching processes and have been produced in quantities of 10s to low 100s. Such targets can be used for high complexity experiments such as Inertial Fusion Energy (IFE) studies and can have many complex components that need assembling and characterisation with high precision. Using the techniques that are common to MEMS devices and integrating these with an existing target fabrication capability we are able to manufacture and deliver targets to these systems. It also enables us to manufacture novel targets that have not been possible using other techniques. In addition, developments in the positioning systems that are required to deliver these targets to the laser focus are also required and a system to deliver the target to a focus of an F2 beam at 0.1Hz is discussed. (paper)

Challenges in the Packaging of MEMS

Energy Technology Data Exchange (ETDEWEB)

Malshe, A.P.; Singh, S.B.; Eaton, W.P.; O' Neal, C.; Brown, W.D.; Miller, W.M.

1999-03-26

The packaging of Micro-Electro-Mechanical Systems (MEMS) is a field of great importance to anyone using or manufacturing sensors, consumer products, or military applications. Currently much work has been done in the design and fabrication of MEMS devices but insufficient research and few publications have been completed on the packaging of these devices. This is despite the fact that packaging is a very large percentage of the total cost of MEMS devices. The main difference between IC packaging and MEMS packaging is that MEMS packaging is almost always application specific and greatly affected by its environment and packaging techniques such as die handling, die attach processes, and lid sealing. Many of these aspects are directly related to the materials used in the packaging processes. MEMS devices that are functional in wafer form can be rendered inoperable after packaging. MEMS dies must be handled only from the chip sides so features on the top surface are not damaged. This eliminates most current die pick-and-place fixtures. Die attach materials are key to MEMS packaging. Using hard die attach solders can create high stresses in the MEMS devices, which can affect their operation greatly. Low-stress epoxies can be high-outgassing, which can also affect device performance. Also, a low modulus die attach can allow the die to move during ultrasonic wirebonding resulting to low wirebond strength. Another source of residual stress is the lid sealing process. Most MEMS based sensors and devices require a hermetically sealed package. This can be done by parallel seam welding the package lid, but at the cost of further induced stress on the die. Another issue of MEMS packaging is the media compatibility of the packaged device. MEMS unlike ICS often interface with their environment, which could be high pressure or corrosive. The main conclusion we can draw about MEMS packaging is that the package affects the performance and reliability of the MEMS devices. There is a

Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments

Directory of Open Access Journals (Sweden)

Ha-Duong Ngo

2015-08-01

Full Text Available In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a “one-sensor-one-packaging_technology” concept. The second one uses a standard flip-chip bonding technique. The first sensor is a “floating-concept”, capable of measuring pressures at temperatures up to 400 °C (constant load with an accuracy of 0.25% Full Scale Output (FSO. A push rod (mounted onto the steel membrane transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process. A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not “floating” but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments.

Science.gov (United States)

Ngo, Ha-Duong; Mukhopadhyay, Biswaijit; Ehrmann, Oswin; Lang, Klaus-Dieter

2015-08-18

In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a "one-sensor-one-packaging_technology" concept. The second one uses a standard flip-chip bonding technique. The first sensor is a "floating-concept", capable of measuring pressures at temperatures up to 400 °C (constant load) with an accuracy of 0.25% Full Scale Output (FSO). A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process). A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not "floating" but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

Carbon microelectromechanical systems (C-MEMS) based microsupercapacitors

KAUST Repository

Agrawal, Richa

2015-05-18

The rapid development in miniaturized electronic devices has led to an ever increasing demand for high-performance rechargeable micropower scources. Microsupercapacitors in particular have gained much attention in recent years owing to their ability to provide high pulse power while maintaining long cycle lives. Carbon microelectromechanical systems (C-MEMS) is a powerful approach to fabricate high aspect ratio carbon microelectrode arrays, which has been proved to hold great promise as a platform for energy storage. C-MEMS is a versatile technique to create carbon structures by pyrolyzing a patterned photoresist. Furthermore, different active materials can be loaded onto these microelectrode platforms for further enhancement of the electrochemical performance of the C-MEMS platform. In this article, different techniques and methods in order to enhance C-MEMS based various electrochemical capacitor systems have been discussed, including electrochemical activation of C-MEMS structures for miniaturized supercapacitor applications, integration of carbon nanostructures like carbon nanotubes onto C-MEMS structures and also integration of pseudocapacitive materials such as polypyrrole onto C-MEMS structures. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Carbon microelectromechanical systems (C-MEMS) based microsupercapacitors

KAUST Repository

Agrawal, Richa; Beidaghi, Majid; Chen, Wei; Wang, Chunlei

2015-01-01

The rapid development in miniaturized electronic devices has led to an ever increasing demand for high-performance rechargeable micropower scources. Microsupercapacitors in particular have gained much attention in recent years owing to their ability to provide high pulse power while maintaining long cycle lives. Carbon microelectromechanical systems (C-MEMS) is a powerful approach to fabricate high aspect ratio carbon microelectrode arrays, which has been proved to hold great promise as a platform for energy storage. C-MEMS is a versatile technique to create carbon structures by pyrolyzing a patterned photoresist. Furthermore, different active materials can be loaded onto these microelectrode platforms for further enhancement of the electrochemical performance of the C-MEMS platform. In this article, different techniques and methods in order to enhance C-MEMS based various electrochemical capacitor systems have been discussed, including electrochemical activation of C-MEMS structures for miniaturized supercapacitor applications, integration of carbon nanostructures like carbon nanotubes onto C-MEMS structures and also integration of pseudocapacitive materials such as polypyrrole onto C-MEMS structures. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Highly Tunable Narrow Bandpass MEMS Filter

KAUST Repository

Hafiz, Md Abdullah Al

2017-07-07

We demonstrate a proof-of-concept highly tunable narrow bandpass filter based on electrothermally and electrostatically actuated microelectromechanical-system (MEMS) resonators. The device consists of two mechanically uncoupled clamped-clamped arch resonators, designed such that their resonance frequencies are independently tuned to obtain the desired narrow passband. Through the electrothermal and electrostatic actuation, the stiffness of the structures is highly tunable. We experimentally demonstrate significant percentage tuning (~125%) of the filter center frequency by varying the applied electrothermal voltages to the resonating structures, while maintaining a narrow passband of 550 ± 50 Hz, a stopband rejection of >17 dB, and a passband ripple ≤ 2.5 dB. An analytical model based on the Euler-Bernoulli beam theory is used to confirm the behavior of the filter, and the origin of the high tunability using electrothermal actuation is discussed.

Aula de história: subjetividade e memória na aprendizagem de alunos

OpenAIRE

Scoz, Beatriz Judith Lima; Rodrigues, Vilma Nardes Silva

2015-01-01

Este artigo apresenta o relato de uma pesquisa sobre as relações entre memória individual e memória coletiva nas aulas de História para compreender suas interferências na produção de sentidos subjetivos dos alunos na aprendizagem de História. A coleta de dados foi feita a partir do filme "Narradores de Javé" e da "conversação livre" com alunos da 8a série de uma escola pública de São Paulo. A pesquisa fundamenta-se nas concepções teóricas de Halbwachs e Placco, & Souza acerca da memória. No q...

MEMS reliability: coming of age

Science.gov (United States)

Douglass, Michael R.

2008-02-01

In today's high-volume semiconductor world, one could easily take reliability for granted. As the MOEMS/MEMS industry continues to establish itself as a viable alternative to conventional manufacturing in the macro world, reliability can be of high concern. Currently, there are several emerging market opportunities in which MOEMS/MEMS is gaining a foothold. Markets such as mobile media, consumer electronics, biomedical devices, and homeland security are all showing great interest in microfabricated products. At the same time, these markets are among the most demanding when it comes to reliability assurance. To be successful, each company developing a MOEMS/MEMS device must consider reliability on an equal footing with cost, performance and manufacturability. What can this maturing industry learn from the successful development of DLP technology, air bag accelerometers and inkjet printheads? This paper discusses some basic reliability principles which any MOEMS/MEMS device development must use. Examples from the commercially successful and highly reliable Digital Micromirror Device complement the discussion.

A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

Science.gov (United States)

Kobayashi, T.; Maeda, R.; Itoh, T.

2008-11-01

In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 Vpp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 107 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method.

A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

International Nuclear Information System (INIS)

Kobayashi, T; Maeda, R; Itoh, T

2008-01-01

In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 V pp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 10 7 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method

A MEMS-based high frequency x-ray chopper

Energy Technology Data Exchange (ETDEWEB)

Siria, A; Schwartz, W; Chevrier, J [Institut Neel, CNRS-Universite Joseph Fourier Grenoble, BP 166, F-38042 Grenoble Cedex 9 (France); Dhez, O; Comin, F [ESRF, 6 rue Jules Horowitz, F-38043 Grenoble Cedex 9 (France); Torricelli, G [Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom)

2009-04-29

Time-resolved x-ray experiments require intensity modulation at high frequencies (advanced rotating choppers have nowadays reached the kHz range). We here demonstrate that a silicon microlever oscillating at 13 kHz with nanometric amplitude can be used as a high frequency x-ray chopper. We claim that using micro-and nanoelectromechanical systems (MEMS and NEMS), it will be possible to achieve higher frequencies in excess of hundreds of megahertz. Working at such a frequency can open a wealth of possibilities in chemistry, biology and physics time-resolved experiments.

A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

Directory of Open Access Journals (Sweden)

Thi Dep Ha

2016-04-01

Full Text Available Phononic crystals (PnCs and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1 a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2 influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

Energy Technology Data Exchange (ETDEWEB)

Ha, Thi Dep, E-mail: hathidep@yahoo.com [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China); Faculty of Electronic Technology, Industrial University of Ho Chi Minh City, Hochiminh City (Viet Nam); Bao, JingFu, E-mail: baojingfu@uestc.edu.cn [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China)

2016-04-15

Phononic crystals (PnCs) and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q) as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1) a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2) influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps) compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

Q-factor enhancement for self-actuated self-sensing piezoelectric MEMS resonators applying a lock-in driven feedback loop

International Nuclear Information System (INIS)

Kucera, M; Bittner, A; Schmid, U; Manzaneque, T; Sánchez-Rojas, J L

2013-01-01

This paper presents a robust Q-control approach based on an all-electrical feedback loop enhancing the quality factor of a resonant microstructure by using the self-sensing capability of a piezoelectric thin film actuator made of aluminium nitride. A lock-in amplifier is used to extract the feedback signal which is proportional to the piezoelectric current. The measured real part is used to replace the originally low-quality and noisy feedback signal to modulate the driving voltage of the piezoelectric thin-film actuator. Since the lock-in amplifier reduces the noise in the feedback signal substantially, the proposed enhancement loop avoids the disadvantage of a constant signal-to-noise ratio, which an analogue feedback circuit usually suffers from. The quality factor was increased from the intrinsic value of 1766 to a maximum of 34 840 in air. These promising results facilitate precise measurements for self-actuated and self-sensing MEMS cantilevers even when operated in static viscous media. (paper)

Integrated design of MEMS

DEFF Research Database (Denmark)

De Grave, Arnaud; Brissaud, Daniel

2007-01-01

Emerging technologies of Micro-Electromechanical Systems (MEMS) are applications such as airbag accelerometers. Micro-products present many physical differences from macro-products. Moreover, there is a high level of integration in multiple fields of physics with strongly coupled effects...... industrial immersion to propose a socio-technological description of the design process and MEMS design tools....

Electron mobility in the inversion layers of fully depleted SOI films

Energy Technology Data Exchange (ETDEWEB)

Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2017-04-15

The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

Surface chemistry and tribology of MEMS.

Science.gov (United States)

Maboudian, Roya; Carraro, Carlo

2004-01-01

The microscopic length scale and high surface-to-volume ratio, characteristic of microelectro-mechanical systems (MEMS), dictate that surface properties are of paramount importance. This review deals with the effects of surface chemical treatments on tribological properties (adhesion, friction, and wear) of MEMS devices. After a brief review of materials and processes that are utilized in MEMS technology, the relevant tribological and chemical issues are discussed. Various MEMS microinstruments are discussed, which are commonly employed to perform adhesion, friction, and wear measurements. The effects of different surface treatments on the reported tribological properties are discussed.

Group Delay of High Q Antennas

DEFF Research Database (Denmark)

Bahramzy, Pevand; Pedersen, Gert Frølund

2013-01-01

Group Delay variations versus frequency is an essential factor which can cause distortion and degradation in the signals. Usually this is an issue in wideband communication systems, such as satellite communication systems, which are used for transmitting wideband data. However, group delay can also...... become an issue, when working with high Q antennas, because of the steep phase shift over the frequency. In this paper, it is measured how large group delay variations can become, when going from a low Q antenna to a high Q antenna. The group delay of a low Q antenna is shown to be around 1.3 ns, whereas...... a high Q antenna has group delay of around 22 ns. It is due to this huge group delay variation characteristics of high Q antennas, that signal distortion might occur in the radio system with high Q antennas....

Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

Science.gov (United States)

Wu, Bin

Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

Worst-Case Bias During Total Dose Irradiation of SOI Transistors

International Nuclear Information System (INIS)

Ferlet-Cavrois, V.; Colladant, T.; Paillet, P.; Leray, J.-L; Musseau, O.; Schwank, James R.; Shaneyfelt, Marty R.; Pelloie, J.L.; Du Port de Poncharra, J.

2000-01-01

The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL and from CEA/LETI) is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide

MEMS packaging

CERN Document Server

Hsu , Tai-Ran

2004-01-01

MEMS Packaging discusses the prevalent practices and enabling techniques in assembly, packaging and testing of microelectromechanical systems (MEMS). The entire spectrum of assembly, packaging and testing of MEMS and microsystems, from essential enabling technologies to applications in key industries of life sciences, telecommunications and aerospace engineering is covered. Other topics included are bonding and sealing of microcomponents, process flow of MEMS and microsystems packaging, automated microassembly, and testing and design for testing.The Institution of Engineering and Technology is

Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

International Nuclear Information System (INIS)

Yu Xiaomei; Tang Yaquan; Zhang Haitao

2008-01-01

This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

Reduced nonlinearities in 100-nm high SOI waveguides

Science.gov (United States)

Lacava, C.; Marchetti, R.; Vitali, V.; Cristiani, I.; Giuliani, G.; Fournier, M.; Bernabe, S.; Minzioni, P.

2016-03-01

Here we show the results of an experimental analysis dedicated to investigate the impact of optical non linear effects, such as two-photon absorption (TPA), free-carrier absorption (FCA) and free-carrier dispersion (FCD), on the performance of integrated micro-resonator based filters for application in WDM telecommunication systems. The filters were fabricated using SOI (Silicon-on-Insulator) technology by CEA-Leti, in the frame of the FP7 Fabulous Project, which aims to develop low-cost and high-performance integrated optical devices to be used in new generation passive optical- networks (NG-PON2). Different designs were tested, including both ring-based structures and racetrack-based structures, with single-, double- or triple- resonator configuration, and using different waveguide cross-sections (from 500 x 200 nm to 825 x 100 nm). Measurements were carried out using an external cavity tunable laser source operating in the extended telecom bandwidth, using both continuous wave signals and 10 Gbit/s modulated signals. Results show that the use 100-nm high waveguide allows reducing the impact of non-linear losses, with respect to the standard waveguides, thus increasing by more than 3 dB the maximum amount of optical power that can be injected into the devices before causing significant non-linear effects. Measurements with OOK-modulated signals at 10 Gbit/s showed that TPA and FCA don't affect the back-to-back BER of the signal, even when long pseudo-random-bit-sequences (PRBS) are used, as the FCD-induced filter-detuning increases filter losses but "prevents" excessive signal degradation.

Performance of the INTPIX6 SOI pixel detector

International Nuclear Information System (INIS)

Arai, Y.; Miyoshi, T.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Turala, M.; Kucewicz, W.

2017-01-01

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ  m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241 Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e − . The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e − . The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

Performance of the INTPIX6 SOI pixel detector

Science.gov (United States)

Arai, Y.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Kucewicz, W.; Miyoshi, T.; Turala, M.

2017-01-01

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e-. The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e-. The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

The Bridges SOI Model School Program at Palo Verde School, Palo Verde, Arizona.

Science.gov (United States)

Stock, William A.; DiSalvo, Pamela M.

The Bridges SOI Model School Program is an educational service based upon the SOI (Structure of Intellect) Model School curriculum. For the middle seven months of the academic year, all students in the program complete brief daily exercises that develop specific cognitive skills delineated in the SOI model. Additionally, intensive individual…

Advancing MEMS Technology Usage through the MUMPS (Multi-User MEMS Processes) Program

Science.gov (United States)

Koester, D. A.; Markus, K. W.; Dhuler, V.; Mahadevan, R.; Cowen, A.

1995-01-01

In order to help provide access to advanced micro-electro-mechanical systems (MEMS) technologies and lower the barriers for both industry and academia, the Microelectronic Center of North Carolina (MCNC) and ARPA have developed a program which provides users with access to both MEMS processes and advanced electronic integration techniques. The four distinct aspects of this program, the multi-user MEMS processes (MUMP's), the consolidated micro-mechanical element library, smart MEMS, and the MEMS technology network are described in this paper. MUMP's is an ARPA-supported program created to provide inexpensive access to MEMS technology in a multi-user environment. It is both a proof-of-concept and educational tool that aids in the development of MEMS in the domestic community. MUMP's technologies currently include a 3-layer poly-silicon surface micromachining process and LIGA (lithography, electroforming, and injection molding) processes that provide reasonable design flexibility within set guidelines. The consolidated micromechanical element library (CaMEL) is a library of active and passive MEMS structures that can be downloaded by the MEMS community via the internet. Smart MEMS is the development of advanced electronics integration techniques for MEMS through the application of flip chip technology. The MEMS technology network (TechNet) is a menu of standard substrates and MEMS fabrication processes that can be purchased and combined to create unique process flows. TechNet provides the MEMS community greater flexibility and enhanced technology accessibility.

A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

Science.gov (United States)

Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

Deep sub-micron FD-SOI for front-end application

International Nuclear Information System (INIS)

Ikeda, H.; Arai, Y.; Hara, K.; Hayakawa, H.; Hirose, K.; Ikegami, Y.; Ishino, H.; Kasaba, Y.; Kawasaki, T.; Kohriki, T.; Martin, E.; Miyake, H.; Mochizuki, A.; Tajima, H.; Tajima, O.; Takahashi, T.; Takashima, T.; Terada, S.; Tomita, H.; Tsuboyama, T.

2007-01-01

In order to confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented

Optical inspection of hidden MEMS structures

Science.gov (United States)

Krauter, Johann; Gronle, Marc; Osten, Wolfgang

2017-06-01

Micro-electro-mechanical system's (MEMS) applications have greatly expanded over the recent years, and the MEMS industry has grown almost exponentially. One of the strongest drivers are the automotive and consumer markets. A 100% test is necessary especially in the production of automotive MEMS sensors since they are subject to safety relevant functions. This inspection should be carried out before dicing and packaging since more than 90% of the production costs are incurred during these steps. An electrical test is currently being carried out with each MEMS component. In the case of a malfunction, the defect can not be located on the wafer because the MEMS are no longer optically accessible due to the encapsulation. This paper presents a low coherence interferometer for the topography measurement of MEMS structures located within the wafer stack. Here, a high axial and lateral resolution is necessary to identify defects such as stuck or bent MEMS fingers. First, the boundary conditions for an optical inspection system will be discussed. The setup is then shown with some exemplary measurements.

MEMS microphone innovations towards high signal to noise ratios (Conference Presentation) (Plenary Presentation)

Science.gov (United States)

Dehé, Alfons

2017-06-01

After decades of research and more than ten years of successful production in very high volumes Silicon MEMS microphones are mature and unbeatable in form factor and robustness. Audio applications such as video, noise cancellation and speech recognition are key differentiators in smart phones. Microphones with low self-noise enable those functions. Backplate-free microphones enter the signal to noise ratios above 70dB(A). This talk will describe state of the art MEMS technology of Infineon Technologies. An outlook on future technologies such as the comb sensor microphone will be given.

A novel design and analysis of a MEMS ceramic hot-wire anemometer for high temperature applications

International Nuclear Information System (INIS)

Nagaiah, N R; Sleiti, A K; Rodriguez, S; Kapat, J S; An, L; Chow, L

2006-01-01

This paper attempts to prove the feasibility of high temperature MEMS hot-wire anemometer for gas turbine environment. No such sensor exists at present. Based on the latest improvement in a new type of Polymer-Derived Ceramic (PDC) material, the authors present a Novel design, structural and thermal analysis of MEMS hot-wire anemometer (HWA) based on PDC material, and show that such a sensor is indeed feasible. This MEMS Sensor is microfabricated by using three types of PDC materials such as SiAlCN, SiCN (lightly doped) and SiCN (heavily doped) for sensing element (hot-wire), support prongs and connecting leads respectively. This novel hot wire anemometer can perform better than a conventional HWA in which the hot wire is made of tungsten or platinum-iridium. This type of PDC-HWA can be used in harsh environment due to its high temperature resistance, tensile strength and resistance to oxidation. This HWA is fabricated using microstereolithography as a novel microfabrication technique to manufacture the proposed MEMS Sensor

First results of a Double-SOI pixel chip for X-ray imaging

Energy Technology Data Exchange (ETDEWEB)

Lu, Yunpeng, E-mail: yplu@ihep.ac.cn [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China); Ouyang, Qun [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China); Arai, Yasuo [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Org., KEK, Tsukuba 305-0801 (Japan); Liu, Yi; Wu, Zhigang; Zhou, Yang [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China)

2016-09-21

Aiming at low energy X-ray imaging, a prototype chip based on Double-SOI process was designed and tested. The sensor and pixel circuit were characterized. The long lasting crosstalk issue in SOI technology was understood. The operation of pixel was verified with a pulsed infrared laser beam. The depletion of sensor revealed by signal amplitudes is consistent with the one revealed by I–V curve. An s-curve fitting resulted in a sigma of 153 e{sup −} among which equivalent noise charge (ENC) contributed 113 e{sup −}. It's the first time that the crosstalk issue in SOI technology was solved and a counting type SOI pixel demonstrated the detection of low energy radiation quantitatively.

High Performance Microaccelerometer with Wafer-level Hermetic Packaged Sensing Element and Continuous-time BiCMOS Interface Circuit

International Nuclear Information System (INIS)

Ko, Hyoungho; Park, Sangjun; Paik, Seung-Joon; Choi, Byoung-doo; Park, Yonghwa; Lee, Sangmin; Kim, Sungwook; Lee, Sang Chul; Lee, Ahra; Yoo, Kwangho; Lim, Jaesang; Cho, Dong-il

2006-01-01

A microaccelerometer with highly reliable, wafer-level packaged MEMS sensing element and fully differential, continuous time, low noise, BiCMOS interface circuit is fabricated. The MEMS sensing element is fabricated on a (111)-oriented SOI wafer by using the SBM (Sacrificial/Bulk Micromachining) process. To protect the silicon structure of the sensing element and enhance the reliability, a wafer level hermetic packaging process is performed by using a silicon-glass anodic bonding process. The interface circuit is fabricated using 0.8 μm BiCMOS process. The capacitance change of the MEMS sensing element is amplified by the continuous-time, fully-differential transconductance input amplifier. A chopper-stabilization architecture is adopted to reduce low-frequency noise including 1/f noise. The fabricated microaccelerometer has the total noise equivalent acceleration of 0.89 μg/√Hz, the bias instability of 490 μg, the input range of ±10 g, and the output nonlinearity of ±0.5 %FSO

Abordagens para cubo de dados massivos com alta dimensionalidade baseadas em memória principal e memória externa : HIC e BCubing

OpenAIRE

Rodrigo Rocha Silva

2015-01-01

Abordagens para computação de cubos de dados utilizando a estratégia de índices invertidos, tais como Frag-Cubing, são alternativas eficientes em relação às tradicionais abordagens para computação de cubos de dados com alta dimensionalidade, entretanto tais abordagens são limitadas pela memória principal (RAM) disponível. Neste trabalho, é apresentadado duas abordgens iniciais: qCube e H-Frag. qCube é uma extensão da abordagem Frag-Cubing que possibilita consultas de intervalo e H-Frag é uma ...

In-plane deeply-etched optical MEMS notch filter with high-speed tunability

International Nuclear Information System (INIS)

Sabry, Yasser M; Eltagoury, Yomna M; Shebl, Ahmed; Khalil, Diaa; Soliman, Mostafa; Sadek, Mohamed

2015-01-01

Notch filters are used in spectroscopy, multi-photon microscopy, fluorescence instrumentation, optical sensors and other life science applications. One type of notch filter is based on a fiber-coupled Fabry–Pérot cavity, which is formed by a reflector (external mirror) facing a dielectric-coated end of an optical fiber. Tailoring this kind of optical filter for different applications is possible because the external mirror has fewer mechanical and optical constraints. In this paper we present optical modeling and implementation of a fiber-coupled Fabry–Pérot filter based on dielectric-coated optical fiber inserted into a micromachined fiber groove facing a metallized micromirror, which is driven by a high-speed MEMS actuator. The optical MEMS chip is fabricated using deep reactive ion etching (DRIE) technology on a silicon on insulator wafer, where the optical axis is parallel to the substrate (in-plane) and the optical/mechanical components are self-aligned by the photolithographic process. The DRIE etching depth is 150 μm, chosen to increase the micromirror optical throughput and improving the out-of-plane stiffness of the MEMS actuator. The MEMS actuator type is closing-gap, while its quality factor is almost doubled by slotting the fixed plate. A low-finesse Fabry–Pérot interferometer is formed by the metallized surface of the micromirror and a cleaved end of a standard single-mode fiber, for characterization of the MEMS actuator stroke and resonance frequency. The actuator achieves a travel distance of 800 nm at a resonance frequency of 89.9 kHz. The notch filter characteristics were measured using an optical spectrum analyzer, and the filter exhibits a free spectral range up to 100 nm and a notch rejection ratio up to 20 dB around a wavelength of 1300 nm. The presented device provides batch processing and low-cost production of the filter. (paper)

A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

CERN Multimedia

2002-01-01

% RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

Science.gov (United States)

Damianos, D.; Vitrant, G.; Lei, M.; Changala, J.; Kaminski-Cachopo, A.; Blanc-Pelissier, D.; Cristoloveanu, S.; Ionica, I.

2018-05-01

In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

Biomaterials for MEMS

CERN Document Server

Chiao, Mu

2011-01-01

This book serves as a guide for practicing engineers, researchers, and students interested in MEMS devices that use biomaterials and biomedical applications. It is also suitable for engineers and researchers interested in MEMS and its applications but who do not have the necessary background in biomaterials.Biomaterials for MEMS highlights important features and issues of biomaterials that have been used in MEMS and biomedical areas. Hence this book is an essential guide for MEMS engineers or researchers who are trained in engineering institutes that do not provide the background or knowledge

An SEU resistant 256K SOI SRAM

Science.gov (United States)

Hite, L. R.; Lu, H.; Houston, T. W.; Hurta, D. S.; Bailey, W. E.

1992-12-01

A novel SEU (single event upset) resistant SRAM (static random access memory) cell has been implemented in a 256K SOI (silicon on insulator) SRAM that has attractive performance characteristics over the military temperature range of -55 to +125 C. These include worst-case access time of 40 ns with an active power of only 150 mW at 25 MHz, and a worst-case minimum WRITE pulse width of 20 ns. Measured SEU performance gives an Adams 10 percent worst-case error rate of 3.4 x 10 exp -11 errors/bit-day using the CRUP code with a conservative first-upset LET threshold. Modeling does show that higher bipolar gain than that measured on a sample from the SRAM lot would produce a lower error rate. Measurements show the worst-case supply voltage for SEU to be 5.5 V. Analysis has shown this to be primarily caused by the drain voltage dependence of the beta of the SOI parasitic bipolar transistor. Based on this, SEU experiments with SOI devices should include measurements as a function of supply voltage, rather than the traditional 4.5 V, to determine the worst-case condition.

Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

Science.gov (United States)

Li, Ying; Niu, Guofu; Cressler, J. D.; Patel, J.; Marshall, C. J.; Marshall, P. W.; Kim, H. S.; Reed, R. A.; Palmer, M. J.

2001-12-01

We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I/sub D/-V/sub GS/ characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature.

A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory

International Nuclear Information System (INIS)

Qiao Fengying; Pan Liyang; Wu Dong; Liu Lifang; Xu Jun

2014-01-01

In order to minimize leakage current increase under total ionizing dose (TID) radiation in high density memory circuits, a new isolation technique, combining deep trench isolation (DTI) between the wells, local oxidation of silicon (LOCOS) isolation between the devices within the well, and a P-diffused area in order to limit leakage at the isolation edge is implemented in partly-depleted silicon-on-insulator (PD-SOI) technology. This radiation hardening technique can minimize the layout area by more than 60%, and allows flexible placement of the body contact. Radiation hardened transistors and 256 Kb flash memory chips are designed and fabricated in a 0.6 μm PD-SOI process. Experiments show that no obvious increase in leakage current is observed for single transistors under 1 Mrad(Si) radiation, and that the 256 Kb memory chip still functions well after a TID of 100 krad(Si), with only 50% increase of the active power consumption in read mode. (semiconductor devices)

MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module.

Science.gov (United States)

Pandya, H J; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P

2014-03-01

In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400-1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen.

Going Fabless with MEMS

Directory of Open Access Journals (Sweden)

Bhaskar CHOUBEY

2011-04-01

Full Text Available The Microelectromechanical sensors are finding increasing applications in everyday life. However, each MEMS sensor is generally fabricated on its own individual process. This leads to high cost per sensor. It has been suggested the MEMS should and would follow the path of integrated circuits industry, wherein fabless firms could concentrate on design leading pure-foundries to perfect the manufacturing process. With several designs being manufactured on the same process, the installation cost of fabrication would be evenly shared. Simultaneously, multiple project wafer runs are being offered for MEMS processes to encourage design activity in universities as well as startups. This paper reviews the present state of this transition through an experience of designing and manufacturing microelectromechanical resonators on different processes.

A novel high pressure, high temperature vessel used to conduct long-term stability measurements of silicon MEMS pressure transducers

Science.gov (United States)

Wisniewiski, David

2014-03-01

The need to quantify and to improve long-term stability of pressure transducers is a persistent requirement from the aerospace sector. Specifically, the incorporation of real-time pressure monitoring in aircraft landing gear, as exemplified in Tire Pressure Monitoring Systems (TPMS), has placed greater demand on the pressure transducer for improved performance and increased reliability which is manifested in low lifecycle cost and minimal maintenance downtime through fuel savings and increased life of the tire. Piezoresistive (PR) silicon MEMS pressure transducers are the primary choice as a transduction method for this measurement owing to their ability to be designed for the harsh environment seen in aircraft landing gear. However, these pressure transducers are only as valuable as the long-term stability they possess to ensure reliable, real-time monitoring over tens of years. The "heart" of the pressure transducer is the silicon MEMS element, and it is at this basic level where the long-term stability is established and needs to be quantified. A novel High Pressure, High Temperature (HPHT) vessel has been designed and constructed to facilitate this critical measurement of the silicon MEMS element directly through a process of mechanically "floating" the silicon MEMS element while being subjected to the extreme environments of pressure and temperature, simultaneously. Furthermore, the HPHT vessel is scalable to permit up to fifty specimens to be tested at one time to provide a statistically significant data population on which to draw reasonable conclusions on long-term stability. With the knowledge gained on the silicon MEMS element, higher level assembly to the pressure transducer envelope package can also be quantified as to the build-effects contribution to long-term stability in the same HPHT vessel due to its accommodating size. Accordingly, a HPHT vessel offering multiple levels of configurability and robustness in data measurement is presented, along

Numerical and Experimental Study of the Q Factor of High-Q Micropillar Cavities

DEFF Research Database (Denmark)

Gregersen, Niels; Reitzenstein, S.; Kistner, C.

2010-01-01

Micropillar cavities are potential candidates for high-efficiency single-photon sources and are testbeds for cavity quantum electrodynamics experiments. In both applications a high quality (Q) factor is desired. It was recently shown that the Q of high-Q semiconductor micropillar cavities exhibit...

European MEMS foundries

Science.gov (United States)

Salomon, Patric R.

2003-01-01

According to the latest release of the NEXUS market study, the market for MEMS or Microsystems Technology (MST) is predicted to grow to $68B by the year 2005, with systems containing these components generating even higher revenues and growth. The latest advances in MST/MEMS technology have enabled the design of a new generation of microsystems that are smaller, cheaper, more reliable, and consume less power. These integrated systems bring together numerous analog/mixed signal microelectronics blocks and MEMS functions on a single chip or on two or more chips assembled within an integrated package. In spite of all these advances in technology and manufacturing, a system manufacturer either faces a substantial up-front R&D investment to create his own infrastructure and expertise, or he can use design and foundry services to get the initial product into the marketplace fast and with an affordable investment. Once he has a viable product, he can still think about his own manufacturing efforts and investments to obtain an optimized high volume manufacturing for the specific product. One of the barriers to successful exploitation of MEMS/MST technology has been the lack of access to industrial foundries capable of producing certified microsystems devices in commercial quantities, including packaging and test. This paper discusses Multi-project wafer (MPW) runs, requirements for foundries and gives some examples of foundry business models. Furthermore, this paper will give an overview on MST/MEMS services that are available in Europe, including pure commercial activities, European project activities (e.g. Europractice), and some academic services.

L’estime de soi : un cas particulier d’estime sociale ?

OpenAIRE

Santarelli, Matteo

2016-01-01

Un des traits plus originaux de la théorie intersubjective de la reconnaissance d’Axel Honneth, consiste dans la façon dont elle discute la relation entre estime sociale et estime de soi. En particulier, Honneth présente l’estime de soi comme un reflet de l’estime sociale au niveau individuel. Dans cet article, je discute cette conception, en posant la question suivante : l’estime de soi est-elle un cas particulier de l’estime sociale ? Pour ce faire, je me concentre sur deux problèmes crucia...

The application of structural nonlinearity in the development of linearly tunable MEMS capacitors

International Nuclear Information System (INIS)

Shavezipur, M; Khajepour, A; Hashemi, S M

2008-01-01

Electrostatically actuated parallel-plate tunable capacitors are the most desired MEMS capacitors because of their smaller sizes and higher Q-factors. However, these capacitors suffer from low tunability and exhibit high sensitivity near the pull-in voltage which counters the concept of tunability. In this paper, a novel design for parallel-plate tunable capacitors with high tunability and linear capacitance–voltage (C–V) response is developed. The design uses nonlinear structural rigidities to relieve intrinsic electrostatic nonlinearity in MEMS capacitors. Based on the force–displacement characteristic of an ideally linear capacitor, a real beam-like nonlinear spring model is developed. The variable stiffness coefficients of such springs improve the linearity of the C–V curve. Moreover, because the structural stiffness increases with deformations, the pull-in is delayed and higher tunability is achieved. Finite element simulations reveal that capacitors with air gaps larger than 4 µm and supporting beams thinner than 1 µm can generate highly linear C–V responses and tunabilities over 120%. Experimental results for capacitors fabricated by PolyMUMPs verify the effect of weak nonlinear geometric stiffness on improving the tunability for designs with a small air gap and relatively thick structural layers

Advantages of PZT thick film for MEMS sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.

2010-01-01

For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair comp....... Improved figure of merit is reached in the piezoelectric PZT thick film, TF2100CIP, by using cold isostatic pressure in the PZT preparation process. The porosity of TF2100 is decreased 38%, hence, allowing an increase of charge sensitivity for MEMS sensors of 59%....... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

A MEMS-based, wireless, biometric-like security system

Science.gov (United States)

Cross, Joshua D.; Schneiter, John L.; Leiby, Grant A.; McCarter, Steven; Smith, Jeremiah; Budka, Thomas P.

2010-04-01

We present a system for secure identification applications that is based upon biometric-like MEMS chips. The MEMS chips have unique frequency signatures resulting from fabrication process variations. The MEMS chips possess something analogous to a "voiceprint". The chips are vacuum encapsulated, rugged, and suitable for low-cost, highvolume mass production. Furthermore, the fabrication process is fully integrated with standard CMOS fabrication methods. One is able to operate the MEMS-based identification system similarly to a conventional RFID system: the reader (essentially a custom network analyzer) detects the power reflected across a frequency spectrum from a MEMS chip in its vicinity. We demonstrate prototype "tags" - MEMS chips placed on a credit card-like substrate - to show how the system could be used in standard identification or authentication applications. We have integrated power scavenging to provide DC bias for the MEMS chips through the use of a 915 MHz source in the reader and a RF-DC conversion circuit on the tag. The system enables a high level of protection against typical RFID hacking attacks. There is no need for signal encryption, so back-end infrastructure is minimal. We believe this system would make a viable low-cost, high-security system for a variety of identification and authentication applications.

Fabrication of integrated metallic MEMS devices

DEFF Research Database (Denmark)

Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

2002-01-01

A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

MEMS-based transmission lines for microwave applications

Science.gov (United States)

Wu, Qun; Fu, Jiahui; Gu, Xuemai; Shi, Huajuan; Lee, Jongchul

2003-04-01

This paper mainly presents a briefly review for recent progress in MEMS-based transmission lines for use in microwave and millimeterwave range. MEMS-based transmission lines including different transmission line structure such as membrane-supported microstrip line microstrip line, coplanar microshield transmission line, LIGA micromachined planar transmission line, micromachined waveguides and coplanar waveguide are discussed. MEMS-based transmission lines are characterized by low propagation loss, wide operation frequency band, low dispersion and high quality factor, in addition, the fabrication is compatible with traditional processing of integrated circuits (IC"s). The emergence of MEMS-based transmission lines provided a solution for miniaturizing microwave system and monolithic microwave integrated circuits.

On-Chip Out-of-Plane High-Q Inductors

Science.gov (United States)

2002-01-01

and leaves the substrate available for circuits. Magnetic forces [2] and the surface tension of a molten dot of solder [3] or polymer [4] have been...and P. Renaud, "High aspect ratio planar coils embedded in SU8 photoepoxy for MEMS applications," Tech. Digest Eurosensors XII, Southampton, Sep. 13-16

Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

Science.gov (United States)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

International Nuclear Information System (INIS)

Jamali Mahabadi, S E; Orouji, Ali A; Keshavarzi, P; Moghadam, Hamid Amini

2011-01-01

In this paper, for the first time, we propose a partial silicon-on-insulator (P-SOI) lateral double-diffused metal-oxide-semiconductor-field-effect-transistor (LDMOSFET) with a modified buried layer in order to improve breakdown voltage (BV) and self-heating effects (SHEs). The main idea of this work is to control the electric field by shaping the buried layer. With two steps introduced in the buried layer, the electric field distribution is modified. Also a P-type window introduced makes the substrate share the vertical voltage drop, leading to a high vertical BV. Moreover, four interface electric field peaks are introduced by the buried P-layer, the Si window and two steps, which modulate the electric field in the SOI layer and the substrate. Hence, a more uniform electric field is obtained; consequently, a high BV is achieved. Furthermore, the Si window creates a conduction path between the active layer and substrate and alleviates the SHE. Two-dimensional simulations show that the BV of double step partial silicon on insulator is nearly 69% higher and alleviates SHEs 17% in comparison with its single step partial SOI counterpart and nearly 265% higher and alleviate SHEs 18% in comparison with its conventional SOI counterpart

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

Science.gov (United States)

Irom, Farokh; Farmanesh, Farhad; Kouba, Coy K.

2006-01-01

Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed.

A low feed-through 3D vacuum packaging technique with silicon vias for RF MEMS resonators

Science.gov (United States)

Zhao, Jicong; Yuan, Quan; Kan, Xiao; Yang, Jinling; Yang, Fuhua

2017-01-01

This paper presents a wafer-level three-dimensional (3D) vacuum packaging technique for radio frequency microelectromechanical systems (RF MEMS) resonators. A Sn-rich Au-Sn solder bonding is employed to provide a vacuum encapsulation as well as electrical conductions. Vertical silicon vias are micro-fabricated by glass reflow process. The optimized grounding, via pitch, and all-round shielding effectively reduce feed-through capacitance. Thus the signal-to-background ratios (SBRs) of the transmission signals increase from 17 dB to 20 dB, and the quality factor (Q) values of the packaged resonators go from around 8000 up to more than 9500. The measured average leak rate and shear strength are (2.55  ±  0.9)  ×  10-8 atm-cc s-1 and 42.53  ±  4.19 MPa, respectively. Furthermore, thermal cycling test between  -40 °C and 100 °C and high temperature storage test at 150 °C show that the resonant-frequency drifts are less than  ±7 ppm. In addition, the SBRs and the Q values have no obvious change after the tests. The experimental results demonstrated that the proposed encapsulation technique is well suited for the applications of RF MEMS devices.

Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

Science.gov (United States)

Jain, Neeraj; Raj, Balwinder

2017-12-01

Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects (SCEs), leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SOI FinFET is one of the best multigate structures that has gained importance in all electronic design automation (EDA) industries due to its improved short channel effects (SCEs), because of its more effective gate-controlling capabilities. In this paper, our aim is to explore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evaluated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope (SS), ON current (I on), OFF current (I off) and I on/I off ratio. The potential benefits of SOI FinFET at drain-to-source voltage, V DS = 0.05 V and V DS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain (A V), output conductance (g d), trans-conductance (g m), gate capacitance (C gg), and cut-off frequency (f T = g m/2πC gg) with spacer region variations.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Science.gov (United States)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

High Productivity DRIE solutions for 3D-SiP and MEMS Volume Manufacturing

International Nuclear Information System (INIS)

Puech, M; Thevenoud, J M; Launay, N; Arnal, N; Godinat, P; Andrieu, B; Gruffat, J M

2006-01-01

Emerging 3D-SiP technologies and high volume MEMS applications require high productivity mass production DRIE systems. The Alcatel DRIE product range has recently been optimised to reach the highest process and hardware production performances. A study based on sub-micron high aspect ratio structures encountered in the most stringent 3D-SiP has been carried out. The optimization of the Bosch process parameters has resulted in ultra high silicon etch rates, with unrivalled uniformity and repeatability leading to excellent process. In parallel, most recent hardware and proprietary design optimization including vacuum pumping lines, process chamber, wafer chucks, pressure control system, gas delivery are discussed. These improvements have been monitored in a mass production environment for a mobile phone application. Field data analysis shows a significant reduction of cost of ownership thanks to increased throughput and much lower running costs. These benefits are now available for all 3D-SiP and high volume MEMS applications. The typical etched patterns include tapered trenches for CMOS imagers, through silicon via holes for die stacking, well controlled profile angle for 3D high precision inertial sensors, and large exposed area features for inkjet printer heads and Silicon microphones

Total dose induced latch in short channel NMOS/SOI transistors

International Nuclear Information System (INIS)

Ferlet-Cavrois, V.; Quoizola, S.; Musseau, O.; Flament, O.; Leray, J.L.; Pelloie, J.L.; Raynaud, C.; Faynot, O.

1998-01-01

A latch effect induced by total dose irradiation is observed in short channel SOI transistors. This effect appears on NMOS transistors with either a fully or a partially depleted structure. It is characterized by a hysteresis behavior of the Id-Vg characteristics at high drain bias for a given critical dose. Above this dose, the authors still observe a limited leakage current at low drain bias (0.1 V), but a high conduction current at high drain bias (2 V) as the transistor should be in the off-state. The critical dose above which the latch appears strongly depends on gate length, transistor structure (fully or partially depleted), buried oxide thickness and supply voltage. Two-dimensional (2D) numerical simulations indicate that the parasitic condition is due to the latch of the back gate transistor triggered by charge trapping in the buried oxide. To avoid the latch induced by the floating body effect, different techniques can be used: doping engineering, body contacts, etc. The study of the main parameters influencing the latch (gate length, supply voltage) shows that the scaling of technologies does not necessarily imply an increased latch sensitivity. Some technological parameters like the buried oxide hardness and thickness can be used to avoid latch, even at high cumulated dose, on highly integrated SOI technologies

Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

Science.gov (United States)

Zhao, Xiaofeng; Li, Dandan; Yu, Yang; Wen, Dianzhong

2017-07-01

Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors ({R}1, {R}2, {R}3 and {R}4) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/°C, respectively. Through varying the ratio of the base region resistances {r}1 and {r}2, the TCS for the sensor with the compensation circuit is -127 ppm/°C. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor. Project supported by the National Natural Science Foundation of China (No. 61471159), the Natural Science Foundation of Heilongjiang Province (No. F201433), the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (No. 2015018), and the Special Funds for Science and Technology Innovation Talents of Harbin in China (No. 2016RAXXJ016).

A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

Science.gov (United States)

Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

2014-01-01

This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

EDITORIAL: International MEMS Conference 2006

Science.gov (United States)

Tay, Francis E. H.; Jianmin, Miao; Iliescu, Ciprian

2006-04-01

The International MEMS conference (iMEMS2006) organized by the Institute of Bioengineering and Nanotechnology and Nanyang Technological University aims to provide a platform for academicians, professionals and industrialists in various related fields from all over the world to share and learn from each other. Of great interest is the incorporation of the theme of life sciences application using MEMS. It is the desire of this conference to initiate collaboration and form network of cooperation. This has continued to be the objective of iMEMS since its inception in 1997. The technological advance of MEMS over the past few decades has been truly exciting in terms of development and applications. In order to participate in this rapid development, a conference involving delegates from within the MEMS community and outside the community is very meaningful and timely. With the receipt of over 200 articles, delegates related to MEMS field from all over the world will share their perspectives on topics such as MEMS/MST Design, MEMS Teaching and Education, MEMS/MST Packaging, MEMS/MST Fabrication, Microsystems Applications, System Integration, Wearable Devices, MEMSWear and BioMEMS. Invited speakers and delegates from outside the field have also been involved to provide challenges, especially in the life sciences field, for the MEMS community to potentially address. The proceedings of the conference will be published as an issue in the online Journal of Physics: Conference Series and this can reach a wider audience and will facilitate the reference and citation of the work presented in the conference. We wish to express our deep gratitude to the International Scientific Committee members and the organizing committee members for contributing to the success of this conference. We would like to thank all the delegates, speakers and sponsors from all over the world for presenting and sharing their perspectives on topics related to MEMS and the challenges that MEMS can

RF MEMS: status of the industry and roadmaps

Science.gov (United States)

Bouchaud, Jeremie; Wicht, Henning

2005-01-01

Microsystems for Radio Frequency applications, known as RF MEMS, have entered the commercialization phase in 2003. Bulk Acoustic Wave filters are already produced in series and first commercial samples of switches are available. On the other hand, reliability and packaging problems are still a major hurdle especially for switches and tunable capacitors. Will RF MEMS hold their promise to be one of the future major businesses for MEMS? The presentation will give an overview on RF MEMS applications and market players. WTC will highlight technical challenges that still have to be solved to open mass markets such as mobile telephony and WLAN. WTC will also present applications of RF MEMS and opportunities in niche markets with high added value like military and space applications. WTC will provide a regional analysis and compare R&D focus and public funding situation in North America, Europe and Asia. Finally, WTC will present an updated product roadmap market forecast for RF MEMS devices for the 2004-2008 time period.

Power Management of MEMS-Based Storage Devices for Mobile Systems

NARCIS (Netherlands)

Khatib, M.G.; Hartel, Pieter H.

2008-01-01

Because of its small form factor, high capacity, and expected low cost, MEMS-based storage is a suitable storage technology for mobile systems. MEMS-based storage devices should also be energy efficient for deployment in mobile systems. The problem is that MEMS-based storage devices are mechanical,

Output-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits

Directory of Open Access Journals (Sweden)

A. Daghighi

2013-09-01

Full Text Available In this article, a novel concept is introduced to improve the radio frequency (RF linearity of partially-depleted (PD silicon-on-insulator (SOI MOSFET circuits. The transition due to the non-zero body resistance (RBody in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free circuit is shown. 3-D Simulations of various body-contacted devices are carried out to extract the transition-free body resistances. To identify the output conductance transition-free concept and its application to RF circuits, a 2.4 GHz low noise amplifier (LNA is analyzed. Mixed mode device-circuit analysis is carried out to simultaneously solve device transport equations and circuit spice models. FFT calculations are performed on the output signal to compute harmonic distortion figures. Comparing the conventional body-contacted and transition-free SOI LNAs, third harmonic distortion (HD3 and total harmonic distortion (THD are improved by 16% and 24%, respectively. Two-tone test is used to analyze third order intermodulation distortions. OIP3 is improved in transition-free SOI LNA by 17% comparing with the conventional body-contacted SOI LNA. These results show the possibility of application of transition-free design concept to improve linearity of RF SOI MOSFET circuits.

Special Issue: Planar Fully-Depleted SOI technology

Science.gov (United States)

Allibert, F.; Hiramoto, T.; Nguyen, B. Y.

2016-03-01

We are in the era of mobile computing with smart handheld devices and remote data storage "in the cloud," with devices that are almost always on and driven by needs of high data transmission rate, instant access/connection and long battery life. With all the ambitious requirements for better performance with lower power consumption, the SoC solution must also be cost-effective in order to capture the large, highly-competitive consumer mobile and wearable markets. The Fully-Depleted SOI device/circuit is a unique option that can satisfy all these requirements and has made tremendous progress in development for various applications and adoption by foundries, integrated device manufacturers (IDM), and fabless companies in the last 3 years.

Advanced Mechatronics and MEMS Devices

CERN Document Server

2013-01-01

Advanced Mechatronics and MEMS Devicesdescribes state-of-the-art MEMS devices and introduces the latest technology in electrical and mechanical microsystems. The evolution of design in microfabrication, as well as emerging issues in nanomaterials, micromachining, micromanufacturing and microassembly are all discussed at length in this volume. Advanced Mechatronics also provides a reader with knowledge of MEMS sensors array, MEMS multidimensional accelerometer, artificial skin with imbedded tactile components, as well as other topics in MEMS sensors and transducers. The book also presents a number of topics in advanced robotics and an abundance of applications of MEMS in robotics, like reconfigurable modular snake robots, magnetic MEMS robots for drug delivery and flying robots with adjustable wings, to name a few. This book also: Covers the fundamentals of advanced mechatronics and MEMS devices while also presenting new state-of-the-art methodology and technology used in the application of these devices Prese...

High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials

Directory of Open Access Journals (Sweden)

Theodor Doll

2006-04-01

Full Text Available Micromachined thermal heater platforms offer low electrical power consumptionand high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR gas- and liquid monitoring systems. In this paper, we report oninvestigations on silicon-on-insulator (SOI based infrared (IR emitter devices heated byemploying different kinds of metallic and semiconductor heater materials. Our resultsclearly reveal the superior high-temperature performance of semiconductor over metallicheater materials. Long-term stable emitter operation in the vicinity of 1300 K could beattained using heavily antimony-doped tin dioxide (SnO2:Sb heater elements.

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

Science.gov (United States)

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Investigating ESD sensitivity in electrostatic SiGe MEMS

International Nuclear Information System (INIS)

Sangameswaran, Sandeep; De Coster, Jeroen; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; Groeseneken, Guido; De Wolf, Ingrid

2010-01-01

The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.

SOI MESFETs for Extreme Environment Electronics, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs)....

Thermal Loss in High-Q Antennas

DEFF Research Database (Denmark)

Barrio, Samantha Caporal Del; Bahramzy, Pevand; Svendsen, Simon

2014-01-01

Tunable antennas are very promising for future generations of mobile communications, where antennas are required to cover a wide range operating bands. This letter aims at characterizing the loss mechanism of tunable antennas. Tunable antennas typically exhibit a high Quality factor (Q), which ca...... lead to thermal loss due to the conductivity of the metal. The investigation shows that copper loss is non-negligible for high Q values. In the proposed design the copper loss is 2 dB, for a Q of 260 at 700 MHz....

Superconducting nanowire single-photon detectors (SNSPDs) on SOI for near-infrared range

Energy Technology Data Exchange (ETDEWEB)

Trojan, Philipp; Il' in, Konstantin; Henrich, Dagmar; Hofherr, Matthias; Doerner, Steffen; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie (KIT) (Germany); Semenov, Alexey [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Huebers, Heinz-Wilhelm [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany)

2013-07-01

Superconducting nanowire single-photon detectors are promising devices for photon detectors with high count rates, low dark count rates and low dead times. At wavelengths beyond the visible range, the detection efficiency of today's SNSPDs drops significantly. Moreover, the low absorption in ultra-thin detector films is a limiting factor over the entire spectral range. Solving this problem requires approaches for an enhancement of the absorption range in feeding the light to the detector element. A possibility to obtain a better absorption is the use of multilayer substrate materials for photonic waveguide structures. We present results on development of superconducting nanowire single-photon detectors made from niobium nitride on silicon-on-insulator (SOI) multilayer substrates. Optical and superconducting properties of SNSPDs on SOI will be discussed and compared with the characteristics of detectors on common substrates.

MEMS Solar Generators

OpenAIRE

Grbovic, Dragoslav; Osswald, Sebastian

2011-01-01

Approved for public release; distribution is unlimited Using MEMS bimaterial structures to build highly efficient solar energy generators. This is a novel approach that utilizes developments in the area of bimaterial sensors and applies them in the field of solar energy harvesting.

Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

Science.gov (United States)

Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

International Nuclear Information System (INIS)

Wang, D.; Ueda, A.; Takada, H.; Nakashima, H.

2006-01-01

A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τ g ) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τ g measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission

Converting MEMS technology into profits

Science.gov (United States)

Bryzek, Janusz

1998-08-01

This paper discusses issues related to transitioning a company from the advanced technology development phase (with a particular focus on MEMS) to a profitable business, with emphasis on start-up companies. It includes several case studies from (primarily) NovaSensor MEMS development history. These case studies illustrate strategic problems with which advanced MEMS technology developers have to be concerned. Conclusions from these case studies could be used as checkpoints for future MEMS developers to increase probability of profitable operations. The objective for this paper is to share the author's experience from multiple MEMS start-ups to accelerate development of the MEMS market by focusing state- of-the-art technologists on marketing issues.

Hybrid III-V/SOI resonant cavity enhanced photodetector

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

2016-01-01

A hybrid III–V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated...... as part of the HG reflector, enabling a very compact vertical cavity. Numerical investigations show that a quantum efficiency close to 100 % and a detection linewidth of about 1 nm can be achieved, which are desirable for wavelength division multiplexing applications. Based on these results, a hybrid RCE...

Simulation of dual-gate SOI MOSFET with different dielectric layers

Science.gov (United States)

Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

2016-04-01

The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

Science.gov (United States)

Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

Total dose radiation effects of pressure sensors fabricated on uni-bond-SOI materials

International Nuclear Information System (INIS)

Zhu Shiyang; Huang Yiping; Wang Jin; Li Anzhen; Shen Shaoqun; Bao Minhang

2001-01-01

Piezoresistive pressure sensors with a twin-island structure were successfully fabricated using high quality Uni-bond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO 2 , the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60 Co γ-rays up to 2.3 x 10 4 Gy(H 2 O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition

Ball driven type MEMS SAD for artillery fuse

International Nuclear Information System (INIS)

Seok, Jin Oh; Jeong, Ji-hun; Eom, Junseong; Lee, Seung S; Lee, Chun Jae; Ryu, Sung Moon; Oh, Jong Soo

2017-01-01

The SAD (safety and arming device) is an indispensable fuse component that ensures safe and reliable performance during the use of ammunition. Because the application of electronic devices for smart munitions is increasing, miniaturization of the SAD has become one of the key issues for next-generation artillery fuses. Based on MEMS technology, various types of miniaturized SADs have been proposed and fabricated. However, none of them have been reported to have been used in actual munitions due to their lack of high impact endurance and complicated explosive train arrangements. In this research, a new MEMS SAD using a ball driven mechanism, is successfully demonstrated based on a UV LIGA (lithography, electroplating and molding) process. Unlike other MEMS SADs, both high impact endurance and simple structure were achieved by using a ball driven mechanism. The simple structural design also simplified the fabrication process and increased the processing yield. The ball driven type MEMS SAD performed successfully under the desired safe and arming conditions of a spin test and showed fine agreement with the FEM simulation result, conducted prior to its fabrication. A field test was also performed with a grenade launcher to evaluate the SAD performance in the firing environment. All 30 of the grenade samples equipped with the proposed MEMS SAD operated successfully under the high-G setback condition. (paper)

Ball driven type MEMS SAD for artillery fuse

Science.gov (United States)

Seok, Jin Oh; Jeong, Ji-hun; Eom, Junseong; Lee, Seung S.; Lee, Chun Jae; Ryu, Sung Moon; Oh, Jong Soo

2017-01-01

The SAD (safety and arming device) is an indispensable fuse component that ensures safe and reliable performance during the use of ammunition. Because the application of electronic devices for smart munitions is increasing, miniaturization of the SAD has become one of the key issues for next-generation artillery fuses. Based on MEMS technology, various types of miniaturized SADs have been proposed and fabricated. However, none of them have been reported to have been used in actual munitions due to their lack of high impact endurance and complicated explosive train arrangements. In this research, a new MEMS SAD using a ball driven mechanism, is successfully demonstrated based on a UV LIGA (lithography, electroplating and molding) process. Unlike other MEMS SADs, both high impact endurance and simple structure were achieved by using a ball driven mechanism. The simple structural design also simplified the fabrication process and increased the processing yield. The ball driven type MEMS SAD performed successfully under the desired safe and arming conditions of a spin test and showed fine agreement with the FEM simulation result, conducted prior to its fabrication. A field test was also performed with a grenade launcher to evaluate the SAD performance in the firing environment. All 30 of the grenade samples equipped with the proposed MEMS SAD operated successfully under the high-G setback condition.

RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

KAUST Repository

Elshurafa, Amro M.; Emira, Ahmed; Radwan, Ahmed Gomaa; Salama, Khaled N.

2012-01-01

This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality

Development of a pixel sensor with fine space-time resolution based on SOI technology for the ILC vertex detector

Energy Technology Data Exchange (ETDEWEB)

Ono, Shun, E-mail: s-ono@champ.hep.sci.osaka-u.ac.jp [Osaka University, 1-1 Machikaneyama, Toyonaka (Japan); Togawa, Manabu; Tsuji, Ryoji; Mori, Teppei [Osaka University, 1-1 Machikaneyama, Toyonaka (Japan); Yamada, Miho; Arai, Yasuo; Tsuboyama, Toru; Hanagaki, Kazunori [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Org. (KEK), 1-1 Oho, Tsukuba (Japan)

2017-02-11

We have been developing a new monolithic pixel sensor with silicon-on-insulator (SOI) technology for the International Linear Collider (ILC) vertex detector system. The SOI monolithic pixel detector is realized using standard CMOS circuits fabricated on a fully depleted sensor layer. The new SOI sensor SOFIST can store both the position and timing information of charged particles in each 20×20 μm{sup 2} pixel. The position resolution is further improved by the position weighted with the charges spread to multiple pixels. The pixel also records the hit timing with an embedded time-stamp circuit. The sensor chip has column-parallel analog-to-digital conversion (ADC) circuits and zero-suppression logic for high-speed data readout. We are designing and evaluating some prototype sensor chips for optimizing and minimizing the pixel circuit.

Research and Analysis of MEMS Switches in Different Frequency Bands

Directory of Open Access Journals (Sweden)

Wenchao Tian

2018-04-01

Full Text Available Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are summarized: (1 utilizing combinations of several switches in series; (2 covering a float metal layer on the dielectric layer; (3 using dielectric layer materials with high dielectric constants and conductor materials with low resistance; (4 developing MEMS switches using T-match and π-match; (5 designing MEMS switches based on bipolar complementary metal–oxide–semiconductor (BiCMOS technology and reconfigurable MEMS’ surfaces; (6 employing thermal compensation structures, circularly symmetric structures, thermal buckle-beam actuators, molybdenum membrane, and thin-film packaging; (7 selecting Ultra-NanoCrystalline diamond or aluminum nitride dielectric materials and applying a bipolar driving voltage, stoppers, and a double-dielectric-layer structure; and (8 adopting gold alloying with carbon nanotubes (CNTs, hermetic and reliable packaging, and mN-level contact.

From MEMS to nanomachine

International Nuclear Information System (INIS)

Esashi, Masayoshi; Ono, Takahito

2005-01-01

Practically applicable microelectromechanical systems (MEMS) and nanomachines have been developed by applying dry processes. Deep reactive ion etching (RIE) of silicon and its applications to an electrostatically levitated rotational gyroscope, a fibre optic blood pressure sensor and in micro-actuated probes are described. High density electrical feedthrough in glass is made using deep RIE of glass and electroplating of metal. Multi-probe data storage system has been developed using the high density electrical feedthrough in glass. Chemical vapour deposition (CVD) of different materials have been developed for MEMS applications; trench-refill using SiO 2 CVD, microstructures using Silicon carbide CVD for glass mold press and selective CVD of carbon nanotube for electron field emitter. Multi-column electron beam lithography system has been developed using the electron field emitter. (topical review)

MEMS for pico- to micro-satellites

OpenAIRE

Shea, Herbert

2009-01-01

MEMS sensors, actuators, and sub-systems can enable an important reduction in the size and mass of spacecrafts, first by replacing larger and heavier components, then by replacing entire subsystems, and finally by enabling the microfabrication of highly integrated picosats. Very small satellites (1 to 100 kg) stand to benefit the most from MEMS technologies. These small satellites are typically used for science or technology demonstration missions, with higher risk tolerance than multi-ton te...

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

International Nuclear Information System (INIS)

Barchuk, I.P.; Kilchitskaya, V.I.; Lysenko, V.S.

1997-01-01

In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique

MEMS for automotive and aerospace applications

CERN Document Server

Kraft, Michael

2013-01-01

MEMS for automotive and aerospace applications reviews the use of Micro-Electro-Mechanical-Systems (MEMS) in developing solutions to the unique challenges presented by the automotive and aerospace industries.Part one explores MEMS for a variety of automotive applications. The role of MEMS in passenger safety and comfort, sensors for automotive vehicle stability control applications and automotive tire pressure monitoring systems are considered, along with pressure and flow sensors for engine management, and RF MEMS for automotive radar sensors. Part two then goes on to explore MEMS for

Amorphous Diamond MEMS and Sensors

Energy Technology Data Exchange (ETDEWEB)

SULLIVAN, JOHN P.; FRIEDMANN, THOMAS A.; ASHBY, CAROL I.; DE BOER, MAARTEN P.; SCHUBERT, W. KENT; SHUL, RANDY J.; HOHLFELDER, ROBERT J.; LAVAN, D.A.

2002-06-01

This report describes a new microsystems technology for the creation of microsensors and microelectromechanical systems (MEMS) using stress-free amorphous diamond (aD) films. Stress-free aD is a new material that has mechanical properties close to that of crystalline diamond, and the material is particularly promising for the development of high sensitivity microsensors and rugged and reliable MEMS. Some of the unique properties of aD include the ability to easily tailor film stress from compressive to slightly tensile, hardness and stiffness 80-90% that of crystalline diamond, very high wear resistance, a hydrophobic surface, extreme chemical inertness, chemical compatibility with silicon, controllable electrical conductivity from insulating to conducting, and biocompatibility. A variety of MEMS structures were fabricated from this material and evaluated. These structures included electrostatically-actuated comb drives, micro-tensile test structures, singly- and doubly-clamped beams, and friction and wear test structures. It was found that surface micromachined MEMS could be fabricated in this material easily and that the hydrophobic surface of the film enabled the release of structures without the need for special drying procedures or the use of applied hydrophobic coatings. Measurements using these structures revealed that aD has a Young's modulus of {approx}650 GPa, a tensile fracture strength of 8 GPa, and a fracture toughness of 8 MPa{center_dot}m {sup 1/2}. These results suggest that this material may be suitable in applications where stiction or wear is an issue. Flexural plate wave (FPW) microsensors were also fabricated from aD. These devices use membranes of aD as thin as {approx}100 nm. The performance of the aD FPW sensors was evaluated for the detection of volatile organic compounds using ethyl cellulose as the sensor coating. For comparable membrane thicknesses, the aD sensors showed better performance than silicon nitride based sensors. Greater

A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

Directory of Open Access Journals (Sweden)

Saeid Marjani

2016-09-01

Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

MEMS for Tunable Photonic Metamaterial Applications

Science.gov (United States)

Stark, Thomas

Photonic metamaterials are materials whose optical properties are derived from artificially-structured sub-wavelength unit cells, rather than from the bulk properties of the constituent materials. Examples of metamaterials include plasmonic materials, negative index materials, and electromagnetic cloaks. While advances in simulation tools and nanofabrication methods have allowed this field to grow over the past several decades, many challenges still exist. This thesis addresses two of these challenges: fabrication of photonic metamaterials with tunable responses and high-throughput nanofabrication methods for these materials. The design, fabrication, and optical characterization of a microelectromechanical systems (MEMS) tunable plasmonic spectrometer are presented. An array of holes in a gold film, with plasmon resonance in the mid-infrared, is suspended above a gold reflector, forming a Fabry-Perot interferometer of tunable length. The spectra exhibit the convolution of extraordinary optical transmission through the holes and Fabry-Perot resonances. Using MEMS, the interferometer length is modulated from 1.7 mum to 21.67 mum , thereby tuning the free spectral range from about 2900 wavenumbers to 230.7 wavenumbers and shifting the reflection minima and maxima across the infrared. Due to its broad spectral tunability in the fingerprint region of the mid-infrared, this device shows promise as a tunable biological sensing device. To address the issue of high-throughput, high-resolution fabrication of optical metamaterials, atomic calligraphy, a MEMS-based dynamic stencil lithography technique for resist-free fabrication of photonic metamaterials on unconventional substrates, has been developed. The MEMS consists of a moveable stencil, which can be actuated with nanometer precision using electrostatic comb drive actuators. A fabrication method and flip chip method have been developed, enabling evaporation of metals through the device handle for fabrication on an

Queixa subjetiva de comprometimento da memória em idosos saudáveis: influência de sintomas depressivos, percepção de estresse e autoestima

Directory of Open Access Journals (Sweden)

Aline Talita dos Santos

2012-10-01

Full Text Available O presente estudo analisou a relação entre percepção de estresse, sintomas depressivos e autoestima em idosos com e sem queixa subjetiva de comprometimento de memória. Foram incluídos 204 idosos (104 sem e 100 com queixa de memória avaliados a partir do instrumento Memory Assessment Complain Questionnaire (MAC-Q. O protocolo de estudo incluiu a Escala de Estresse Percebido (EEP, a Escala de Depressão Geriátrica (GDS e a Escala de Autoestima de Rosenberg (EAE. Os idosos com queixa de comprometimento apresentaram escores significativamente maiores na EEP e GDS e menores na EAE (p < 0.001. Foi observada correlação negativa entre o escore do MAC-Q e EPP (p < 0.001 e EAE (p = 0.01. A análise de regressão multivariada identificou somente o estresse como fator preditor da queixa subjetiva de memória. Esses dados sugerem que a percepção de estresse e os sintomas depressivos estão associados com a queixa de memória em idosos.

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

International Nuclear Information System (INIS)

Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

2005-01-01

The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures

NARCIS (Netherlands)

de Boer, Meint J.; Gardeniers, Johannes G.E.; Jansen, Henricus V.; Gilde, M.J.; Roelofs, Gerard; Sasserath, Jay N.; Elwenspoek, Michael Curt

This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF6/O2-based high-density plasmas at cryogenic temperatures. Procedures of how to tune the equipment for optimal results with respect to etch rate and profile control are described. Profile

Development of scanning micromirror with discrete steering angles

International Nuclear Information System (INIS)

Wang, Z F; Noell, W; Zickar, M; Rooij, N F de; Lim, S P

2006-01-01

This paper describes the development of a new MEMS-based optical mirror, which can perform optical switching (or scanning) function with discrete reflection angles in an outof- plane configuration. The device is fabricated through the Deep Reactive Ion Etching (DRIE) process on silicon-on-insulator (SOI) wafer, followed by wafer dicing and assembly with two metalised glass dies. The MEMS mirror can be tilted under electrostatic force between the opposite electrodes embedded on SOI and glass structures. The most outstanding feature of this MEMS mirror is the discrete and therefore, reliable tilting angles, which generated by its unique mechanical structural design and electrostatic-driven mechanism. In this paper, the concept of the new scanning mirror is presented, followed by the introduction of device design, mechanical simulation, microfabrication process, assembly solution, and some testing results. The potential applications of this new MEMS mirror include optical scanning, optical sensing (or detection), and optical switching

Design and Optimization of AlN based RF MEMS Switches

Science.gov (United States)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

A Nuclear Microbattery for MEMS Devices

International Nuclear Information System (INIS)

Blanchard, James; Henderson, Douglass; Lal, Amit

2002-01-01

This project was designed to demonstrate the feasibility of producing on-board power for MEMS devices using radioisotopes. MEMS is a fast growing field, with hopes for producing a wide variety of revolutionary applications, including ''labs on a chip,'' micromachined scanning tunneling microscopes, microscopic detectors for biological agents, microsystems for DNA identification, etc. Currently, these applications are limited by the lack of an on-board power source. Research is ongoing to study approaches such as fuel cells, fossil fuels, and chemical batteries, but all these concepts have limitations. For long-lived, high energy density applications, on-board radioisotope power offers the best choice. We have succeeded in producing such devices using a variety of isotopes, incorporation methods, and device geometries. These experiments have demonstrated the feasibility of using radioisotope power and that there are a variety of options available for MEMS designers. As an example of an integrated, self-powered application, we have created an oscillating cantilever beam that is capable of consistent, periodic oscillations over very long time periods without the need for refueling. Ongoing work will demonstrate that this cantilever is capable of radio frequency transmission, allowing MEMS devices to communicate with one another wirelessly. Thus, this will be the first self-powered wireless transmitter available for use in MEMS devices, permitting such applications as sensors embedded in buildings for continuous monitoring of the building performance and integrity

Micro-Electromechanical-Systems (MEMS) technologies for aerospace applications in Canada

International Nuclear Information System (INIS)

Pimprikar, M.

2001-01-01

During the last decade, research and development of Micro-Electro-Mechanical Systems (MEMS) have shown significant promise for a variety of aerospace applications. The advantages of drastic size and weight reduction of MEMS enables consideration of developing low-cost, high-performance, ultra-portable, MEMS-based devices and systems for aircraft, space and defense requirements. 'Microelectromechanical Systems, or MEMS', are integrated microdevices or systems combining electrical and mechanical components, fabricated using integrated circuit compatible batch-processing techniques, and varying in size from micrometers to millimeters. In the 1990's, MEMS were used as laboratory curiosities with very low power, short lifetimes and few concrete applications. One decade later, MEMS have taken major roles in several industries, the total world market is expected to grow from $14 billion to over $40 billion by the year 2002. A typical device contains micromechanical structures that move by flexing (membranes, cantilevers, springs) and MEMS/MOEMS level where the integration of microelectronics, micromechanics and optics form a complete system (sensor, actuator, photonic device). (author)

High temperature piezoresistive {beta}-SiC-on-SOI pressure sensor for combustion engines

Energy Technology Data Exchange (ETDEWEB)

Berg, J. von; Ziermann, R.; Reichert, W.; Obermeier, E. [Tech. Univ. Berlin (Germany). Microsensor and Actuator Technol. Center; Eickhoff, M.; Kroetz, G. [Daimler Benz AG, Munich (Germany); Thoma, U.; Boltshauser, T.; Cavalloni, C. [Kistler Instrumente AG, Winterthur (Switzerland); Nendza, J.P. [TRW Deutschland GmbH, Barsinghausen (Germany)

1998-08-01

For measuring the cylinder pressure in combustion engines of automobiles a high temperature pressure sensor has been developed. The sensor is made of a membrane based piezoresistive {beta}-SiC-on-SOI (SiCOI) sensor chip and a specially designed housing. The SiCOI sensor was characterized under static pressures of up to 200 bar in the temperature range between room temperature and 300 C. The sensitivity of the sensor at room temperature is approximately 0.19 mV/bar and decreases to about 0.12 mV/bar at 300 C. For monitoring the dynamic cylinder pressure the sensor was placed into the combustion chamber of a gasoline engine. The measurements were performed at 1500 rpm under different loads, and for comparison a quartz pressure transducer from Kistler AG was used as a reference. The maximum pressure at partial load operation amounts to about 15 bar. The difference between the calibrated SiCOI sensor and the reference sensor is significantly less than 1 bar during the whole operation. (orig.) 8 refs.

Potential of Piezoelectric MEMS Resonators for Grape Must Fermentation Monitoring

Directory of Open Access Journals (Sweden)

Georg Pfusterschmied

2017-06-01

Full Text Available In this study grape must fermentation is monitored using a self-actuating/self-sensing piezoelectric micro-electromechanical system (MEMS resonator. The sensor element is excited in an advanced roof tile-shaped vibration mode, which ensures high Q-factors in liquids (i.e., Q ~100 in isopropanol, precise resonance frequency analysis, and a fast measurement procedure. Two sets of artificial model solutions are prepared, representing an ordinary and a stuck/sluggish wine fermentation process. The precision and reusability of the sensor are shown using repetitive measurements (10 times, resulting in standard deviations of the measured resonance frequencies of ~0.1%, Q-factor of ~11%, and an electrical conductance peak height of ~12%, respectively. With the applied evaluation procedure, moderate standard deviations of ~1.1% with respect to density values are achieved. Based on these results, the presented sensor concept is capable to distinguish between ordinary and stuck wine fermentation, where the evolution of the wine density associated with the decrease in sugar and the increase in ethanol concentrations during fermentation processes causes a steady increase in the resonance frequency for an ordinary fermentation. Finally, the first test measurements in real grape must are presented, showing a similar trend in the resonance frequency compared to the results of an artificial solutions, thus proving that the presented sensor concept is a reliable and reusable platform for grape must fermentation monitoring.

MEMS applications in space exploration

Science.gov (United States)

Tang, William C.

1997-09-01

Space exploration in the coming century will emphasize cost effectiveness and highly focused mission objectives, which will result in frequent multiple missions that broaden the scope of space science and to validate new technologies on a timely basis. MEMS is one of the key enabling technology to create cost-effective, ultra-miniaturized, robust, and functionally focused spacecraft for both robotic and human exploration programs. Examples of MEMS devices at various stages of development include microgyroscope, microseismometer, microhygrometer, quadrupole mass spectrometer, and micropropulsion engine. These devices, when proven successful, will serve as models for developing components and systems for new-millennium spacecraft.

Towards Polarization Diversity on the SOI Platform With Simple Fabrication Process

DEFF Research Database (Denmark)

Ding, Yunhong; Liu, Liu; Peucheret, Christophe

2011-01-01

We present a polarization diversity circuit built on the silicon-on-insulator (SOI) platform, which can be fabricated by a simple process. The polarization diversity is based on two identical air-clad asymmetrical directional couplers, which simultaneously play the roles of polarization splitter...... and rotator. A silicon polarization diversity circuit with a single microring resonator is fabricated on the SOI platform. Only ${1-dB polarization-dependent loss is demonstrated. A significant improvement of the polarization dependence is obtained for 20-Gb/s nonreturn-to-zero differential phase-shift keying...

High temperature stable RF MEMS microwave switches

OpenAIRE

Klein, Stefan

2010-01-01

Im Rahmen dieser Arbeit wurden elektrostatisch angesteuerte RF-MEMS Schalter mit kapazitiver Kopplung entwickelt, die Prozesstemperaturen von 400°C und darüber hinaus ohne Verlust der Funktionstüchtigkeit überstehen. Als Funktionsmaterial wird einerseits eine AlSiCu und andererseits eine WTi Legierung verwendet. Das Schalterprinzip beruht auf dem Wanderkeileffekt, der einen gekrümmten Biegebalken nutzt. Diese Verbiegung weg von der Substratoberfläche, die durch einen wohldefinierten intri...

Characterization of ultrathin SOI film and application to short channel MOSFETs.

Science.gov (United States)

Tang, Xiaohui; Reckinger, Nicolas; Larrieu, Guilhem; Dubois, Emmanuel; Flandre, Denis; Raskin, Jean-Pierre; Nysten, Bernard; Jonas, Alain M; Bayot, Vincent

2008-04-23

In this study, a very dilute solution (NH(4)OH:H(2)O(2):H(2)O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s(-1) based on the self-limited etching speed of the solution. The thickness uniformity of the thin film, evaluated by spectroscopic ellipsometry and by high-resolution x-ray reflectivity, remains constant through the thinning process. Moreover, the film roughness, analyzed by atomic force microscopy, slightly improves during the thinning process. The residual stress in the thin film is much smaller than that obtained by sacrificial oxidation. Mobility, measured by means of a bridge-type Hall bar on 15 nm film, is not significantly reduced compared to the value of bulk silicon. Finally, the thinned SOI wafers were used to fabricate Schottky-barrier metal-oxide-semiconductor field-effect transistors with a gate length down to 30 nm, featuring state-of-the-art current drive performance.

An analysis of radiation effects on electronics and soi-mos devices as an alternative

International Nuclear Information System (INIS)

Ikraiam, F. A.

2013-01-01

The effects of radiation on semiconductors and electronic components are analyzed. The performance of such circuitry depends upon the reliability of electronic devices where electronic components will be unavoidably exposed to radiation. This exposure can be detrimental or even fatal to the expected function of the devices. Single event effects (SEE), in particular, which lead to sudden device or system failure and total dose effects can reduce the lifetime of electronic devices in such systems are discussed. Silicon-on-insulator (SOI) technology is introduced as an alternative for radiation-hardened devices. I-V Characteristics Curves for SOI-MOS devices subjected to a different total radiation doses are illustrated. In addition, properties of some semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, and AlGaN/GaN are compared with those of SOI devices. The recognition of the potential usefulness of SOI-MOS semiconductor materials for harsh environments is discussed. A summary of radiation effects, impacts and mitigation techniques is also presented. (authors)

Three dimensional MEMS supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Sun, Wei

2011-10-15

The overall objective of this research is to achieve compact supercapacitors with high capacitance, large power density, and long cycle life for using as micro power sources to drive low power devices and sensors. The main shortcoming of supercapacitors as a power source is that its energy density typically is about 1/10 of that of batteries. To achieve compact supercapacitors of large energy density, supercapacitors must be developed with high capacitance and power density which are mainly depended on the effective surface area of the electrodes of the supercapacitors. Many studies have been done to increase the effective surface area by modifying the electrode materials, however, much less investigations are focus on machining the electrodes. In my thesis work, micro- and nano-technologies are applied as technology approaches for machining the electrodes with three dimensional (3D) microstructures. More specific, Micro-electro-mechanical system (MEMS) fabrication process flow, which integrates the key process such as LIGA-like (German acronym for Lithographie, Galvanoformung, Abformung, which mean Lithography, Electroplating and Molding) technology or DRIE (deep reactive ion etching), has been developed to enable innovative designs of 3D MEMS supercapacitors which own the electrodes of significantly increased geometric area. Two types of 3D MEMS supercapcitors, based on LIGA-like and DRIE technology respectively, were designed and successfully created. The LIGA-like based 3D MEMS supercapacitor is with an interdigital 3D structure, and consists of silicon substrate, two electroplated nickel current collectors, two PPy (poly pyrrole) electrodes, and solid state electrolyte. The fabrication process flow developed includes the flowing key processes, SU-8 lithography, nickel electroplating, PPy polymerization and solid state electrolyte coating. Electrochemical tests showed that the single electrode of the supercapacitor has the specific capacitance of 0.058 F cm-2

MEMS capacitive force sensors for cellular and flight biomechanics

International Nuclear Information System (INIS)

Sun Yu; Nelson, Bradley J

2007-01-01

Microelectromechanical systems (MEMS) are playing increasingly important roles in facilitating biological studies. They are capable of providing not only qualitative but also quantitative information on the cellular, sub-cellular and organism levels, which is instrumental to understanding the fundamental elements of biological systems. MEMS force sensors with their high bandwidth and high sensitivity combined with their small size, in particular, have found a role in this domain, because of the importance of quantifying forces and their effect on the function and morphology of many biological structures. This paper describes our research in the development of MEMS capacitive force sensors that have already demonstrated their effectiveness in the areas of cell mechanics and Drosophila flight dynamics studies. (review article)

Generation and confinement of mobile charges in buried oxide of SOI substrates; Generation et confinement de charges mobiles dans les oxydes enterres de substrats SOI

Energy Technology Data Exchange (ETDEWEB)

Gruber, O.; Krawiec, S.; Musseau, O.; Paillet, Ph.; Courtot-Descharles, A. [CEA Bruyeres-le-Chatel, DIF, 91 (France)

1999-07-01

We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. This study of the mechanisms of generation and confinement of mobile protons in the buried oxide of SOI wafers emphasizes the importance of H+ diffusion in the oxide in the formation of a mobile charge. Under specific electric field conditions the irradiation of these devices results in a pinning of this mobile charge at the bottom Si-SiO{sub 2} interface. Ab initio calculations are in progress to investigate the possible precursor defects in the oxide and detail the mechanism for mobile proton generation and confinement. (authors)

Deep coupling of star tracker and MEMS-gyro data under highly dynamic and long exposure conditions

Science.gov (United States)

Sun, Ting; Xing, Fei; You, Zheng; Wang, Xiaochu; Li, Bin

2014-08-01

Star trackers and gyroscopes are the two most widely used attitude measurement devices in spacecrafts. The star tracker is supposed to have the highest accuracy in stable conditions among different types of attitude measurement devices. In general, to detect faint stars and reduce the size of the star tracker, a method with long exposure time method is usually used. Thus, under dynamic conditions, smearing of the star image may appear and result in decreased accuracy or even failed extraction of the star spot. This may cause inaccuracies in attitude measurement. Gyros have relatively good dynamic performance and are usually used in combination with star trackers. However, current combination methods focus mainly on the data fusion of the output attitude data levels, which are inadequate for utilizing and processing internal blurred star image information. A method for tracking deep coupling stars and MEMS-gyro data is proposed in this work. The method achieves deep fusion at the star image level. First, dynamic star image processing is performed based on the angular velocity information of the MEMS-gyro. Signal-to-noise ratio (SNR) of the star spot could be improved, and extraction is achieved more effectively. Then, a prediction model for optimal estimation of the star spot position is obtained through the MEMS-gyro, and an extended Kalman filter is introduced. Meanwhile, the MEMS-gyro drift can be estimated and compensated though the proposed method. These enable the star tracker to achieve high star centroid determination accuracy under dynamic conditions. The MEMS-gyro drift can be corrected even when attitude data of the star tracker are unable to be solved and only one navigation star is captured in the field of view. Laboratory experiments were performed to verify the effectiveness of the proposed method and the whole system.

Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

International Nuclear Information System (INIS)

Lei Tianfei; Luo Xiaorong; Ge Rui; Chen Xi; Wang Yuangang; Yao Guoliang; Jiang Yongheng; Zhang Bo; Li Zhaoji

2011-01-01

An ultra-low specific on-resistance (R on,sp ) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce R on,sp by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). ABV of 93 V and a R on,sp of 51.8 mΩ·mm 2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the R on,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively. (semiconductor devices)

Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

Science.gov (United States)

Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

2007-01-01

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions

International Nuclear Information System (INIS)

Musseau, O.; Leray, J.L.; Ferlet, V.; Umbert, A.; Coic, Y.M.; Hesto, P.

1991-01-01

We have investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion models) various charge collection mechanisms in NMOS/SOI transistors irradiated by single energetic heavy ions. Our physical interpretations of data emphasize the influence of various parasitic structures of the device. Two charge collection mechanisms are detailed: substrate funneling in buried MOS capacitor and latching of the parasitic bipolar transistor. Based on carrier transport and charge collection, the sensitivity of future scaled down CMOS/SOI technologies is finally discussed

MEMS Reliability Assurance Activities at JPL

Science.gov (United States)

Kayali, S.; Lawton, R.; Stark, B.

2000-01-01

An overview of Microelectromechanical Systems (MEMS) reliability assurance and qualification activities at JPL is presented along with the a discussion of characterization of MEMS structures implemented on single crystal silicon, polycrystalline silicon, CMOS, and LIGA processes. Additionally, common failure modes and mechanisms affecting MEMS structures, including radiation effects, are discussed. Common reliability and qualification practices contained in the MEMS Reliability Assurance Guideline are also presented.

Micro-electro-mechanical systems (MEMS: Technology for the 21st century

Directory of Open Access Journals (Sweden)

Đakov Tatjana A.

2014-01-01

Full Text Available Micro-electro-mechanical systems (MEMS are miniturized devices that can sense the environment, process and analyze information, and respond with a variety of mechanical and electrical actuators. MEMS consists of mechanical elements, sensors, actuators, electrical and electronics devices on a common silicon substrate. Micro-electro-mechanical systems are becoming a vital technology for modern society. Some of the advantages of MEMS devices are: very small size, very low power consumption, low cost, easy to integrate into systems or modify, small thermal constant, high resistance to vibration, shock and radiation, batch fabricated in large arrays, improved thermal expansion tolerance. MEMS technology is increasingly penetrating into our lives and improving quality of life, similar to what we experienced in the microelectronics revolution. Commercial opportunities for MEMS are rapidly growing in broad application areas, including biomedical, telecommunication, security, entertainment, aerospace, and more in both the consumer and industrial sectors on a global scale. As a breakthrough technology, MEMS is building synergy between previously unrelated fields such as biology and microelectronics. Many new MEMS and nanotechnology applications will emerge, expanding beyond that which is currently identified or known. MEMS are definitely technology for 21st century.

Ultra compact triplexing filters based on SOI nanowire AWGs

Science.gov (United States)

Jiashun, Zhang; Junming, An; Lei, Zhao; Shijiao, Song; Liangliang, Wang; Jianguang, Li; Hongjie, Wang; Yuanda, Wu; Xiongwei, Hu

2011-04-01

An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion.

Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs

International Nuclear Information System (INIS)

Chen Jing; Luo Jiexin; Wu Qingqing; Chai Zhan; Huang Xiaolu; Wei Xing; Wang Xi

2012-01-01

Silicon-on-insulate (SOI) MOSFETs offer benefits over bulk competitors for fully isolation and smaller junction capacitance. The performance of partially depleted (PD) SOI MOSFETs, though, is not good enough. Since the body is floating, the extra holes (for nMOSFETs) in this region accumulate, causing body potential arise, which of course degrades the performance of the device. How to suppress the floating-body effect becomes critical. There are mainly two ways for the goal. One is to employ body-contact structures, and the other SiGe source/drain structures. However, the former consumes extra area, not welcomed in the state-of-the-art chips design. The latter is not compatible with the traditional CMOS technology. Finding a structure both saving area and compatible technology is the most urgent for PD SOI MOSFETs. Recently, we have developed a new structure with extra heavy boron implantation in the source region for PD SOI nMOSFETs. It consumes no extra area and is also compatible with CMOS technology. The device is found to be free of kink effect in simulation, which implies the floating-body effect is greatly suppressed. In addition, the mechanisms of the kink-free, as well as the impact of different implanting conditions are interpreted.

Advanced MEMS systems for optical communication and imaging

International Nuclear Information System (INIS)

Horenstein, M N; Sumner, R; Freedman, D S; Datta, M; Kani, N; Miller, P; Stewart, J B; Cornelissen, S

2011-01-01

Optical communication and adaptive optics have emerged as two important uses of micro-electromechanical (MEMS) devices based on electrostatic actuation. Each application uses a mirror whose surface is altered by applying voltages of up to 300 V. Previous generations of adaptive-optic mirrors were large (∼1 m) and required the use of piezoelectric transducers. Beginning in the mid-1990s, a new class of small MEMS mirrors (∼1 cm) were developed. These mirrors are now a commercially available, mature technology. This paper describes three advanced applications of MEMS mirrors. The first is a mirror used for corona-graphic imaging, whereby an interferometric telescope blocks the direct light from a distant star so that nearby objects such as planets can be seen. We have developed a key component of the system: a 144-channel, fully-scalable, high-voltage multiplexer that reduces power consumption to only a few hundred milliwatts. In a second application, a MEMS mirror comprises part of a two-way optical communication system in which only one node emits a laser beam. The other node is passive, incorporating a retro-reflective, electrostatic MEMS mirror that digitally encodes the reflected beam. In a third application, the short (∼100-ns) pulses of a commercially-available laser rangefinder are returned by the MEMS mirror as a digital data stream. Suitable low-power drive systems comprise part of the system design.

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

International Nuclear Information System (INIS)

Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

2012-01-01

The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I D hysteresis. The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley-Read-Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs. (condensed matter: structural, mechanical, and thermal properties)

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2 interface under γ-irradiation: effect of preliminary ion implantation

International Nuclear Information System (INIS)

Naumova, O V; Fomin, B I; Ilnitsky, M A; Popov, V P

2012-01-01

In this study, we examined the effect of preliminary boron or phosphorous implantation on charge accumulation in the buried oxide of SOI-MOSFETs irradiated with γ-rays in the total dose range (D) of 10 5 –5 × 10 7 rad. The buried oxide was obtained by high-temperature thermal oxidation of Si, and it was not subjected to any implantation during the fabrication process of SOI structures. It was found that implantation with boron or phosphorous ions, used in fabrication technologies of SOI-MOSFETs, increases the concentration of precursor traps in the buried oxide of SOI structures. Unlike in the case of boron implantation, phosphorous implantation leads to an increased density of states at the Si/buried SiO 2 interface during subsequent γ-irradiation. In the γ-irradiated SOI-MOSFETs, the accumulated charge density and the density of surface states in the Si/buried oxide layer systems both vary in proportion to k i ln D. The coefficients k i for as-fabricated and ion-implanted Si/buried SiO 2 systems were evaluated. From the data obtained, it was concluded that a low density of precursor hole traps was a factor limiting the positive charge accumulation in the buried oxide of as-fabricated (non-implanted) SOI structures with the bonded Si/buried SiO 2 interface. (paper)

Optimizing MEMS-Based Storage Devices for Mobile Battery-Powered Systems

NARCIS (Netherlands)

Khatib, M.G.; Hartel, Pieter H.

An emerging storage technology, called MEMS-based storage, promises nonvolatile storage devices with ultrahigh density, high rigidity, a small form factor, and low cost. For these reasons, MEMS-based storage devices are suitable for battery-powered mobile systems such as PDAs. For deployment in such

RF-MEMS Technology for High-Performance Passives; The challenge of 5G mobile applications

Science.gov (United States)

Iannacci, Jacopo

2017-11-01

Commencing with a review of the characteristics of RF-MEMS in relation to 5G, the book proceeds to develop practical insight concerning the design and development of RF-MEMS including case studies of design concepts. Including multiphysics simulation and animated figures, the book will be essential reading for both academic and industrial researchers and engineers.

Development of Electromechanical Architectures for AC Voltage Metrology

Directory of Open Access Journals (Sweden)

Alexandre BOUNOUH

2010-12-01

Full Text Available This paper presents results of work undertaken for exploring MEMS capabilities to fabricate AC voltage references for electrical metrology and high precision instrumentation through the mechanical-electrical coupling in MEMS. From first MEMS test structures previously realized, a second set of devices with improved characteristics has been developed and fabricated with Silicon on Insulator (SOI Surface Micromachining process. These MEMS exhibit pull-in voltages of 5 V and 10 V to match with the best performance of the read-out electronics developed for driving the MEMS. Deep Level Transient Spectroscopy measurements carried out on the new design show resonance frequencies of about only some kHz, and the stability of the MEMS output voltage measured at 100 kHz has been found very promising for the best samples where the relative deviation from the mean value over almost 12 hours showed a standard deviation of about 6.3 ppm.

Modeling of biaxial gimbal-less MEMS scanning mirrors

Science.gov (United States)

von Wantoch, Thomas; Gu-Stoppel, Shanshan; Senger, Frank; Mallas, Christian; Hofmann, Ulrich; Meurer, Thomas; Benecke, Wolfgang

2016-03-01

One- and two-dimensional MEMS scanning mirrors for resonant or quasi-stationary beam deflection are primarily known as tiny micromirror devices with aperture sizes up to a few Millimeters and usually address low power applications in high volume markets, e.g. laser beam scanning pico-projectors or gesture recognition systems. In contrast, recently reported vacuum packaged MEMS scanners feature mirror diameters up to 20 mm and integrated high-reflectivity dielectric coatings. These mirrors enable MEMS based scanning for applications that require large apertures due to optical constraints like 3D sensing or microscopy as well as for high power laser applications like laser phosphor displays, automotive lighting and displays, 3D printing and general laser material processing. This work presents modelling, control design and experimental characterization of gimbal-less MEMS mirrors with large aperture size. As an example a resonant biaxial Quadpod scanner with 7 mm mirror diameter and four integrated PZT (lead zirconate titanate) actuators is analyzed. The finite element method (FEM) model developed and computed in COMSOL Multiphysics is used for calculating the eigenmodes of the mirror as well as for extracting a high order (n system inputs and scanner displacement as system output. By applying model order reduction techniques using MATLABR a compact state space system approximation of order n = 6 is computed. Based on this reduced order model feedforward control inputs for different, properly chosen scanner displacement trajectories are derived and tested using the original FEM model as well as the micromirror.

Detuning effect study of High-Q Mobile Phone Antennas

DEFF Research Database (Denmark)

Bahramzy, Pevand; Pedersen, Gert F.

2015-01-01

Number of frequency bands that have to be covered by smart phones, are ever increasing. This broadband coverage can be obtained either by using a low-Q antenna or a high-Q tunable antenna. This study investigates high-Q antennas performance when placed in proximity of the user. This study...

MEMS fluidic actuator

Science.gov (United States)

Kholwadwala, Deepesh K [Albuquerque, NM; Johnston, Gabriel A [Trophy Club, TX; Rohrer, Brandon R [Albuquerque, NM; Galambos, Paul C [Albuquerque, NM; Okandan, Murat [Albuquerque, NM

2007-07-24

The present invention comprises a novel, lightweight, massively parallel device comprising microelectromechanical (MEMS) fluidic actuators, to reconfigure the profile, of a surface. Each microfluidic actuator comprises an independent bladder that can act as both a sensor and an actuator. A MEMS sensor, and a MEMS valve within each microfluidic actuator, operate cooperatively to monitor the fluid within each bladder, and regulate the flow of the fluid entering and exiting each bladder. When adjacently spaced in a array, microfluidic actuators can create arbitrary surface profiles in response to a change in the operating environment of the surface. In an embodiment of the invention, the profile of an airfoil is controlled by independent extension and contraction of a plurality of actuators, that operate to displace a compliant cover.

Ultra compact triplexing filters based on SOI nanowire AWGs

Energy Technology Data Exchange (ETDEWEB)

Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei, E-mail: junming@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2011-04-15

An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

Ultra compact triplexing filters based on SOI nanowire AWGs

International Nuclear Information System (INIS)

Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei

2011-01-01

An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

Science.gov (United States)

Patterson, Richard L.; Hammoud, Almad

2009-01-01

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80

Ultra-compact MEMS FTIR spectrometer

Science.gov (United States)

Sabry, Yasser M.; Hassan, Khaled; Anwar, Momen; Alharon, Mohamed H.; Medhat, Mostafa; Adib, George A.; Dumont, Rich; Saadany, Bassam; Khalil, Diaa

2017-05-01

Portable and handheld spectrometers are being developed and commercialized in the late few years leveraging the rapidly-progressing technology and triggering new markets in the field of on-site spectroscopic analysis. Although handheld devices were commercialized for the near-infrared spectroscopy (NIRS), their size and cost stand as an obstacle against the deployment of the spectrometer as spectral sensing components needed for the smart phone industry and the IoT applications. In this work we report a chip-sized microelectromechanical system (MEMS)-based FTIR spectrometer. The core optical engine of the solution is built using a passive-alignment integration technique for a selfaligned MEMS chip; self-aligned microoptics and a single detector in a tiny package sized about 1 cm3. The MEMS chip is a monolithic, high-throughput scanning Michelson interferometer fabricated using deep reactive ion etching technology of silicon-on-insulator substrate. The micro-optical part is used for conditioning the input/output light to/from the MEMS and for further light direction to the detector. Thanks to the all-reflective design of the conditioning microoptics, the performance is free of chromatic aberration. Complemented by the excellent transmission properties of the silicon in the infrared region, the integrated solution allows very wide spectral range of operation. The reported sensor's spectral resolution is about 33 cm-1 and working in the range of 1270 nm to 2700 nm; upper limited by the extended InGaAs detector. The presented solution provides a low cost, low power, tiny size, wide wavelength range NIR spectral sensor that can be manufactured with extremely high volumes. All these features promise the compatibility of this technology with the forthcoming demand of smart portable and IoT devices.

Deep coupling of star tracker and MEMS-gyro data under highly dynamic and long exposure conditions

International Nuclear Information System (INIS)

Sun, Ting; Xing, Fei; You, Zheng; Wang, Xiaochu; Li, Bin

2014-01-01

Star trackers and gyroscopes are the two most widely used attitude measurement devices in spacecrafts. The star tracker is supposed to have the highest accuracy in stable conditions among different types of attitude measurement devices. In general, to detect faint stars and reduce the size of the star tracker, a method with long exposure time method is usually used. Thus, under dynamic conditions, smearing of the star image may appear and result in decreased accuracy or even failed extraction of the star spot. This may cause inaccuracies in attitude measurement. Gyros have relatively good dynamic performance and are usually used in combination with star trackers. However, current combination methods focus mainly on the data fusion of the output attitude data levels, which are inadequate for utilizing and processing internal blurred star image information. A method for tracking deep coupling stars and MEMS-gyro data is proposed in this work. The method achieves deep fusion at the star image level. First, dynamic star image processing is performed based on the angular velocity information of the MEMS-gyro. Signal-to-noise ratio (SNR) of the star spot could be improved, and extraction is achieved more effectively. Then, a prediction model for optimal estimation of the star spot position is obtained through the MEMS-gyro, and an extended Kalman filter is introduced. Meanwhile, the MEMS-gyro drift can be estimated and compensated though the proposed method. These enable the star tracker to achieve high star centroid determination accuracy under dynamic conditions. The MEMS-gyro drift can be corrected even when attitude data of the star tracker are unable to be solved and only one navigation star is captured in the field of view. Laboratory experiments were performed to verify the effectiveness of the proposed method and the whole system. (paper)

SOI Digital Accelerometer Based on Pull-in Time Configuration

NARCIS (Netherlands)

Pakula, L.S.; Rajaraman, V.; French, P.J.

2009-01-01

The operation principle, design, fabrication and measurement results of a quasi digital accelerometer fabricated on a thin silicon-on-insulator (SOI) substrate is presented. The accelerometer features quasi-digital output, therefore eliminating the need for analogue signal conditioning. The

Fully-etched apodized fiber-to-chip grating coupler on the SOI platform with -0.78 dB coupling efficiency using photonic crystals and bonded Al mirror

DEFF Research Database (Denmark)

Ding, Yunhong; Ou, Haiyan; Peucheret, Christophe

2014-01-01

We design and fabricate an ultra-high coupling efficiency fully-etched apodized grating coupler on the SOI platform using photonic crystals and bonded aluminum mirror. Ultra-high coupling efficiency of -0.78 dB with a 3 dB bandwidth of 74 nm are demonstrated.......We design and fabricate an ultra-high coupling efficiency fully-etched apodized grating coupler on the SOI platform using photonic crystals and bonded aluminum mirror. Ultra-high coupling efficiency of -0.78 dB with a 3 dB bandwidth of 74 nm are demonstrated....

Modeling nonlinearities in MEMS oscillators.

Science.gov (United States)

Agrawal, Deepak K; Woodhouse, Jim; Seshia, Ashwin A

2013-08-01

We present a mathematical model of a microelectromechanical system (MEMS) oscillator that integrates the nonlinearities of the MEMS resonator and the oscillator circuitry in a single numerical modeling environment. This is achieved by transforming the conventional nonlinear mechanical model into the electrical domain while simultaneously considering the prominent nonlinearities of the resonator. The proposed nonlinear electrical model is validated by comparing the simulated amplitude-frequency response with measurements on an open-loop electrically addressed flexural silicon MEMS resonator driven to large motional amplitudes. Next, the essential nonlinearities in the oscillator circuit are investigated and a mathematical model of a MEMS oscillator is proposed that integrates the nonlinearities of the resonator. The concept is illustrated for MEMS transimpedance-amplifier- based square-wave and sine-wave oscillators. Closed-form expressions of steady-state output power and output frequency are derived for both oscillator models and compared with experimental and simulation results, with a good match in the predicted trends in all three cases.

A Teaching - Learning Framework for MEMS Education

International Nuclear Information System (INIS)

Sheeparamatti, B G; Angadi, S A; Sheeparamatti, R B; Kadadevaramath, J S

2006-01-01

Micro-Electro-Mechanical Systems (MEMS) technology has been identified as one of the most promising technologies in the 21st century. MEMS technology has opened up a wide array of unforeseen applications. Hence it is necessary to train the technocrats of tomorrow in this emerging field to meet the industrial/societal demands. The drive behind fostering of MEMS technology is the reduction in the cost, size, weight, and power consumption of the sensors, actuators, and associated electronics. MEMS is a multidisciplinary engineering and basic science area which includes electrical engineering, mechanical engineering, material science and biomedical engineering. Hence MEMS education needs a special approach to prepare the technocrats for a career in MEMS. The modern education methodology using computer based training systems (CBTS) with embedded modeling and simulation tools will help in this direction. The availability of computer based learning resources such as MATLAB, ANSYS/Multiphysics and rapid prototyping tools have contributed to proposition of an efficient teaching-learning framework for MEMS education presented in this paper. This paper proposes a conceptual framework for teaching/learning MEMS in the current technical education scenario

Micro electromechanical systems (MEMS) for mechanical engineers

Energy Technology Data Exchange (ETDEWEB)

Lee, A. P., LLNL

1996-11-18

The ongoing advances in Microelectromechanical Systems (MEMS) are providing man-kind the freedom to travel to dimensional spaces never before conceivable. Advances include new fabrication processes, new materials, tailored modeling tools, new fabrication machines, systems integration, and more detailed studies of physics and surface chemistry as applied to the micro scale. In the ten years since its inauguration, MEMS technology is penetrating industries of automobile, healthcare, biotechnology, sports/entertainment, measurement systems, data storage, photonics/optics, computer, aerospace, precision instruments/robotics, and environment monitoring. It is projected that by the turn of the century, MEMS will impact every individual in the industrial world, totaling sales up to $14 billion (source: System Planning Corp.). MEMS programs in major universities have spawned up all over the United States, preparing the brain-power and expertise for the next wave of MEMS breakthroughs. It should be pointed out that although MEMS has been initiated by electrical engineering researchers through the involvement of IC fabrication techniques, today it has evolved such that it requires a totally multi-disciplinary team to develop useful devices. Mechanical engineers are especially crucial to the success of MEMS development, since 90% of the physical realm involved is mechanical. Mechanical engineers are needed for the design of MEMS, the analysis of the mechanical system, the design of testing apparatus, the implementation of analytical tools, and the packaging process. Every single aspect of mechanical engineering is being utilized in the MEMS field today, however, the impact could be more substantial if more mechanical engineers are involved in the systems level designing. In this paper, an attempt is made to create the pathways for a mechanical engineer to enter in the MEMS field. Examples of application in optics and medical devices will be used to illustrate how mechanical

Development of Dual-Axis MEMS Accelerometers for Machine Tools Vibration Monitoring

Directory of Open Access Journals (Sweden)

Chih-Yung Huang

2016-07-01

Full Text Available With the development of intelligent machine tools, monitoring the vibration by the accelerometer is an important issue. Accelerometers used for measuring vibration signals during milling processes require the characteristics of high sensitivity, high resolution, and high bandwidth. A commonly used accelerometer is the lead zirconate titanate (PZT type; however, integrating it into intelligent modules is excessively expensive and difficult. Therefore, the micro electro mechanical systems (MEMS accelerometer is an alternative with the advantages of lower price and superior integration. In the present study, we integrated two MEMS accelerometer chips into a low-pass filter and housing to develop a low-cost dual-axis accelerometer with a bandwidth of 5 kHz and a full scale range of ±50 g for measuring machine tool vibration. In addition, a platform for measuring the linearity, cross-axis sensitivity and frequency response of the MEMS accelerometer by using the back-to-back calibration method was also developed. Finally, cutting experiments with steady and chatter cutting were performed to verify the results of comparing the MEMS accelerometer with the PZT accelerometer in the time and frequency domains. The results demonstrated that the dual-axis MEMS accelerometer is suitable for monitoring the vibration of machine tools at low cost.

MEMS-based Circuits and Systems for Wireless Communication

CERN Document Server

Kaiser, Andreas

2013-01-01

MEMS-based Circuits and Systems for Wireless Communication provides comprehensive coverage of RF-MEMS technology from device to system level. This edited volume places emphasis on how system performance for radio frequency applications can be leveraged by Micro-Electro-Mechanical Systems (MEMS). Coverage also extends to innovative MEMS-aware radio architectures that push the potential of MEMS technology further ahead.  This work presents a broad overview of the technology from MEMS devices (mainly BAW and Si MEMS resonators) to basic circuits, such as oscillators and filters, and finally complete systems such as ultra-low-power MEMS-based radios. Contributions from leading experts around the world are organized in three parts. Part I introduces RF-MEMS technology, devices and modeling and includes a prospective outlook on ongoing developments towards Nano-Electro-Mechanical Systems (NEMS) and phononic crystals. Device properties and models are presented in a circuit oriented perspective. Part II focusses on ...

MEMS Actuators for Improved Performance and Durability

Science.gov (United States)

Yearsley, James M.

Micro-ElectroMechanical Systems (MEMS) devices take advantage of force-scaling at length scales smaller than a millimeter to sense and interact with directly with phenomena and targets at the microscale. MEMS sensors found in everyday devices like cell-phones and cars include accelerometers, gyros, pressure sensors, and magnetic sensors. MEMS actuators generally serve more application specific roles including micro- and nano-tweezers used for single cell manipulation, optical switching and alignment components, and micro combustion engines for high energy density power generation. MEMS rotary motors are actuators that translate an electric drive signal into rotational motion and can serve as rate calibration inputs for gyros, stages for optical components, mixing devices for micro-fluidics, etc. Existing rotary micromotors suffer from friction and wear issues that affect lifetime and performance. Attempts to alleviate friction effects include surface treatment, magnetic and electrostatic levitation, pressurized gas bearings, and micro-ball bearings. The present work demonstrates a droplet based liquid bearing supporting a rotary micromotor that improves the operating characteristics of MEMS rotary motors. The liquid bearing provides wear-free, low-friction, passive alignment between the rotor and stator. Droplets are positioned relative to the rotor and stator through patterned superhydrophobic and hydrophilic surface coatings. The liquid bearing consists of a central droplet that acts as the motor shaft, providing axial alignment between rotor and stator, and satellite droplets, analogous to ball-bearings, that provide tip and tilt stable operation. The liquid bearing friction performance is characterized through measurement of the rotational drag coefficient and minimum starting torque due to stiction and geometric effects. Bearing operational performance is further characterized by modeling and measuring stiffness, environmental survivability, and high

MEMS linear and nonlinear statics and dynamics

CERN Document Server

Younis, Mohammad I

2011-01-01

MEMS Linear and Nonlinear Statics and Dynamics presents the necessary analytical and computational tools for MEMS designers to model and simulate most known MEMS devices, structures, and phenomena. This book also provides an in-depth analysis and treatment of the most common static and dynamic phenomena in MEMS that are encountered by engineers. Coverage also includes nonlinear modeling approaches to modeling various MEMS phenomena of a nonlinear nature, such as those due to electrostatic forces, squeeze-film damping, and large deflection of structures. The book also: Includes examples of nume

HiQ - A high-Q diffractometer for PDF measurements

International Nuclear Information System (INIS)

Brunelli, M.; Fischer, H.E.; Gaehler, R.; Chatterji, T.

2011-01-01

The local structure of many important functional materials is often different from the average structure, as revealed by diffraction, due to, e.g. doping, mixed site occupancy, or formation of time-dependent local distortions. To get information on both the average and the local structures one needs to perform a joint Rietveld and PDF (Pair Distribution Function) analysis of the total scattering, for which we need data to Q = 30 - 35 Angstroms with Δd/d ∼ 3*10 -3 . Here, we describe how the hot-source diffractometer D4 can be adapted to achieve this capability, and outline one possible design of a dedicated high-Q diffractometer at the ILL (Laue Langevin Institute), using the vacant inclined hot-neutron beam IH2. (authors)

A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

International Nuclear Information System (INIS)

Fu Qiang; Zhang Wan-Rong; Jin Dong-Yue; Zhao Yan-Xiao; Wang Xiao

2016-01-01

The product of the cutoff frequency and breakdown voltage ( f T ×BV CEO ) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N + -buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of f T ×BV CEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness ( T BOX ) on f T , BV CEO , and the FOM of f T ×BV CEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces f T , slightly increases BV CEO to some extent, but ultimately degrades the FOM of f T ×BV CEO . Although the f T , BV CEO , and the FOM of f T ×BV CEO can be improved by increasing SOI insulator SiO 2 layer thickness T BOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO 2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick T BOX , a thin N + -buried layer is introduced into collector region to not only improve the FOM of f T ×BV CEO , but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N + -buried layer in collector region is investigated in detail. The result show that the FOM of f T ×BV CEO is improved and the device temperature decreases as the N + -buried layer shifts toward SOI substrate insulation layer

Insulator photocurrents: Application to dose rate hardening of CMOS/SOI integrated circuits

International Nuclear Information System (INIS)

Dupont-Nivet, E.; Coiec, Y.M.; Flament, O.; Tinel, F.

1998-01-01

Irradiation of insulators with a pulse of high energy x-rays can induce photocurrents in the interconnections of integrated circuits. The authors present, here, a new method to measure and analyze this effect together with a simple model. They also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. They show that it explains some of the upsets observed in a SRAM embedded in an ASIC

Design of Surface micromachined Compliant MEMS

Energy Technology Data Exchange (ETDEWEB)

Bradley, Joe Anthony [Iowa State Univ., Ames, IA (United States)

2001-01-01

The consideration of compliant mechanisms as Microelectromechanical Systems (MEMS) is the focus of this research endeavor. MEMS are micron to millimeter devices that combine electrical, mechanical, and information processing capabilities on the same device. These MEMS need some mechanical motion or parts that move relative to each other. This relative motion, using multiple parts, is not desired because of the assembly requirement and the friction introduced. Compliant devices limits or eliminates friction and the need for multi-component assembly. Compliant devices improve designs by creating single piece mechanisms. The purpose of this research is to validate surface micromachining as a viable fabrication process for compliant MEMS designs. Specifically, this research has sought to fabricate a micro-compliant gripper and a micro-compliant clamp to illustrate the process. While other researchers have created compliant MEMS, most have used comb-drive actuation methods and bulk micromachining processes. This research focuses on fully-compliant devices that use device flexibility for motion and actuation. Validation of these compliant MEMS is achieved by structural optimization of device design and functional performance testing. This research contributes to the ongoing research in MEMS by evaluating the potential of using surface micromachining as a process for fabricating compliant micro-mechanisms.

Design of Surface Micromachined Compliant MEMS

Energy Technology Data Exchange (ETDEWEB)

Bradley, Joe Anthony [Iowa State Univ., Ames, IA (United States)

2002-12-31

The consideration of compliant mechanisms as Microelectromechanical Systems (MEMS) is the focus of this research endeavor. MEMS are micron to millimeter devices that combine electrical, mechanical, and information processing capabilities on the same device. These MEMS need some mechanical motion or parts that move relative to each other. This relative motion, using multiple parts, is not desired because of the assembly requirement and the friction introduced. Compliant devices limits or eliminates friction and the need for multi-component assembly. Compliant devices improve designs by creating single piece mechanisms. The purpose of this research is to validate surface micromachining as a viable fabrication process for compliant MEMS designs. Specifically, this research has sought to fabricate a micro-compliant gripper and a micro-compliant clamp to illustrate the process. While other researchers have created compliant MEMs, most have used comb-drive actuation methods and bulk micromachining processes. This research focused on fully-compliant devices that use device flexibility for motion and actuation. Validation of these compliant MEMS is achieved by structural optimization of device design and functional performance testing. This research contributes to the ongoing research in MEMS by evaluating the potential of using surface micromachining as a process for fabricating compliant micro-mechanisms.

A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

Directory of Open Access Journals (Sweden)

Bo Xie

2015-09-01

Full Text Available This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months, a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.

Integrated Electromechanical Transduction Schemes for Polymer MEMS Sensors

Directory of Open Access Journals (Sweden)

Damien Thuau

2018-04-01

Full Text Available Polymer Micro ElectroMechanical Systems (MEMS have the potential to constitute a powerful alternative to silicon-based MEMS devices for sensing applications. Although the use of commercial photoresists as structural material in polymer MEMS has been widely reported, the integration of functional polymer materials as electromechanical transducers has not yet received the same amount of interest. In this context, we report on the design and fabrication of different electromechanical schemes based on polymeric materials ensuring different transduction functions. Piezoresistive transduction made of carbon nanotube-based nanocomposites with a gauge factor of 200 was embedded within U-shaped polymeric cantilevers operating either in static or dynamic modes. Flexible resonators with integrated piezoelectric transduction were also realized and used as efficient viscosity sensors. Finally, piezoelectric-based organic field effect transistor (OFET electromechanical transduction exhibiting a record sensitivity of over 600 was integrated into polymer cantilevers and used as highly sensitive strain and humidity sensors. Such advances in integrated electromechanical transduction schemes should favor the development of novel all-polymer MEMS devices for flexible and wearable applications in the future.

A graphene spin diode based on Rashba SOI

International Nuclear Information System (INIS)

Mohammadpour, Hakimeh

2015-01-01

In this paper a graphene-based two-terminal electronic device is modeled for application in spintronics. It is based on a gapped armchair graphene nanoribbon (GNR). The electron transport is considered through a scattering or channel region which is sandwiched between two lateral semi-infinite ferromagnetic leads. The two ferromagnetic leads, being half-metallic, are supposed to be in either parallel or anti-parallel magnetization. Meanwhile, the central channel region is a normal layer under the influence of the Rashba SOI, induced e.g., by the substrate. The device operation is based on modulating the (spin-) current by tuning the strength of the RSOI. The resultant current, being spin-polarized, is controlled by the RSOI in mutual interplay with the channel length. Inverting alternating bias voltage to a fully rectified spin-current is the main achievement of this paper. - Highlights: • Graphene-based electronic device is modeled with ferromagnetic leads. • The device operation is based on modulating the (spin-) current by Rashba SOI. • Inverting alternating bias voltage to rectified spin-current is the main achievement

Gate Engineering in SOI LDMOS for Device Reliability

Directory of Open Access Journals (Sweden)

Aanand

2016-01-01

Full Text Available A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF SOI LDMOS transistor performance has been simulated with 0.35µm technology in this paper. The proposed device has one poly gate and double metal gate arranged in a stepped manner, from channel to drift region. The first gate uses n+ poly (near source where as other two gates of aluminium. The first gate with thin gate oxide has good control over the channel charge. The third gate with thick gate oxide at drift region reduce gate to drain capacitance. The arrangement of second and third gates in a stepped manner in drift region spreads the electric field uniformly. Using two dimensional device simulations, the proposed SOI LDMOS is compared with conventional structure and the extended metal structure. We demonstrate that the proposed device exhibits significant enhancement in linearity, breakdown voltage, on-resistance and HCI. Double metal gate reduces the impact ionization area which helps to improve the Hot Carrier Injection effect..

A high-order q-difference equation for q-Hahn multiple orthogonal polynomials

DEFF Research Database (Denmark)

Arvesú, J.; Esposito, Chiara

2012-01-01

A high-order linear q-difference equation with polynomial coefficients having q-Hahn multiple orthogonal polynomials as eigenfunctions is given. The order of the equation coincides with the number of orthogonality conditions that these polynomials satisfy. Some limiting situations when are studie....... Indeed, the difference equation for Hahn multiple orthogonal polynomials given in Lee [J. Approx. Theory (2007), ), doi: 10.1016/j.jat.2007.06.002] is obtained as a limiting case....

Applications of MEMS for Space Exploration

Science.gov (United States)

Tang, William C.

1998-03-01

Space exploration in the coming century will emphasize cost effectiveness and highly focused mission objectives, which will result in frequent multiple missions that broaden the scope of space science and to validate new technologies on a timely basis. Micro Electro Mechanical Systems (MEMS) is one of the key enabling technologies to create cost-effective, ultra-miniaturized, robust, and functionally focused spacecraft for both robotic and human exploration programs. Examples of MEMS devices at various stages of development include microgyroscope, microseismometer, microhygrometer, quadrupole mass spectrometer, and micropropulsion engine. These devices, when proven successful, will serve as models for developing components and systems for new-millennium spacecraft.

Fabrication and performance analysis of MEMS-based Variable Emissivity Radiator for Space Applications

International Nuclear Information System (INIS)

Lee, Changwook; Oh, Hyung-Ung; Kim, Taegyu

2014-01-01

All Louver was typically representative as the thermal control device. The louver was not suitable to be applied to small satellite, because it has the disadvantage of increase in weight and volume. So MEMS-based variable radiator was developed to support the disadvantage of the louver MEMS-based variable emissivity radiator was designed for satellite thermal control. Because of its immediate response and low power consumption. Also MEMS- based variable emissivity radiator has been made smaller by using MEMS process, it could be solved the problem of the increase in weight and volume, and it has a high reliability and immediate response by using electrical control. In this study, operation validation of the MEMS radiator had been carried out, resulting that emissivity could be controlled. Numerical model was also designed to predict the thermal control performance of MEMS-based variable emissivity radiator

High Q-factor tunable superconducting HF circuit

CERN Document Server

Vopilkin, E A; Pavlov, S A; Ponomarev, L I; Ganitsev, A Y; Zhukov, A S; Vladimirov, V V; Letyago, A G; Parshikov, V V

2001-01-01

Feasibility of constructing a high Q-factor (Q approx 10 sup 5) mechanically tunable in a wide range of frequencies (12-63 MHz) vibration circuit of HF range was considered. The tunable circuit integrates two single circuits made using YBaCuO films. The circuit frequency is tuned by changing distance X (capacity) between substrates. Potentiality of using substrates of lanthanum aluminate, neodymium gallate and strontium titanate for manufacture of single circuits was considered. Q-factor of the circuit amounted to 68000 at resonance frequency of 6.88 MHz

High Q-factor tunable superconducting HF circuit

International Nuclear Information System (INIS)

Vopilkin, E.A.; Parafin, A.E.; Pavlov, S.A.; Ponomarev, L.I.; Ganitsev, A.Yu.; Zhukov, A.S.; Vladimirov, V.V.; Letyago, A.G.; Parshikov, V.V.

2001-01-01

Feasibility of constructing a high Q-factor (Q ∼ 10 5 ) mechanically tunable in a wide range of frequencies (12-63 MHz) vibration circuit of HF range was considered. The tunable circuit integrates two single circuits made using YBaCuO films. The circuit frequency is tuned by changing distance X (capacity) between substrates. Potentiality of using substrates of lanthanum aluminate, neodymium gallate and strontium titanate for manufacture of single circuits was considered. Q-factor of the circuit amounted to 68000 at resonance frequency of 6.88 MHz [ru

Piezoelectric MEMS resonators

CERN Document Server

Piazza, Gianluca

2017-01-01

This book introduces piezoelectric microelectromechanical (pMEMS) resonators to a broad audience by reviewing design techniques including use of finite element modeling, testing and qualification of resonators, and fabrication and large scale manufacturing techniques to help inspire future research and entrepreneurial activities in pMEMS. The authors discuss the most exciting developments in the area of materials and devices for the making of piezoelectric MEMS resonators, and offer direct examples of the technical challenges that need to be overcome in order to commercialize these types of devices. Some of the topics covered include: Widely-used piezoelectric materials, as well as materials in which there is emerging interest Principle of operation and design approaches for the making of flexural, contour-mode, thickness-mode, and shear-mode piezoelectric resonators, and examples of practical implementation of these devices Large scale manufacturing approaches, with a focus on the practical aspects associate...

Generation and confinement of mobile charges in buried oxide of SOI substrates

International Nuclear Information System (INIS)

Gruber, O.; Krawiec, S.; Musseau, O.; Paillet, Ph.; Courtot-Descharles, A.

1999-01-01

We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. This study of the mechanisms of generation and confinement of mobile protons in the buried oxide of SOI wafers emphasizes the importance of H+ diffusion in the oxide in the formation of a mobile charge. Under specific electric field conditions the irradiation of these devices results in a pinning of this mobile charge at the bottom Si-SiO 2 interface. Ab initio calculations are in progress to investigate the possible precursor defects in the oxide and detail the mechanism for mobile proton generation and confinement. (authors)

A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

Science.gov (United States)

Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

2016-12-01

The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Science.gov (United States)

Jah, Muzar; Simon, Eric; Sharma, Ashok

2003-01-01

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jean-Pierre Famose et Jean Bertsch, L’estime de soi : une controverse éducative, Paris, PUF, 2009, 192 p

OpenAIRE

Benamar, Aïcha

2015-01-01

L’ouvrage porte sur l’estime de soi, dans la sphère sociale en général et le monde éducatif en particulier. L’estime de soi est au cœur du comportement individuel, apportant confiance et assurance, permettant de progresser et in fine de réussir. Une faible estime de soi est fréquemment à l’origine de difficultés pour un individu : doutes, hésitations, ou à l’inverse vanité et arrogance. Un bon niveau d’estime de soi confère à la personnalité : capacité à s’affirmer et respect des autres. Cent...

Adhesion aspects in MEMS/NEMS

CERN Document Server

Kim, Seong H; Mittal, Kash L

2012-01-01

Phenomena associated with the adhesion interaction of surfaces have been a critical aspect of micro- and nanosystem development and performance since the first MicroElectroMechanicalSystems(MEMS) were fabricated. These phenomena are ubiquitous in nature and are present in all systems, however MEMS devices are particularly sensitive to their effects owing to their small size and limited actuation force that can be generated. Extension of MEMS technology concepts to the nanoscale and development of NanoElectroMechanicalSystems(NEMS) will result in systems even more strongly influenced by surface

Practical guide to RF-MEMS

CERN Document Server

Iannacci, Jacopo

2013-01-01

Closes the gap between hardcore-theoretical and purely experimental RF-MEMS books. The book covers, from a practical viewpoint, the most critical steps that have to be taken in order to develop novel RF-MEMS device concepts. Prototypical RF-MEMS devices, both including lumped components and complex networks, are presented at the beginning of the book as reference examples, and these are then discussed from different perspectives with regard to design, simulation, packaging, testing, and post-fabrication modeling. Theoretical concepts are introduced when necessary to complement the practical

A six degrees of freedom mems manipulator

NARCIS (Netherlands)

de Jong, B.R.

2006-01-01

This thesis reports about a six degrees of freedom (DOF) precision manipulator in MEMS, concerning concept generation for the manipulator followed by design and fabrication (of parts) of the proposed manipulation concept in MEMS. Researching the abilities of 6 DOF precision manipulation in MEMS is

Impact of radiations on the electromechanical properties of materials and on the piezoresistive and capacitive transduction mechanisms used in microsystems

Science.gov (United States)

Francis, Laurent A.; Gkotsis, Petros; Kilchytska, Valeriya; Tang, Xiaohui; Druart, Sylvain; Raskin, Jean-Pierre; Flandre, Denis

2013-03-01

The impact of different types of radiation on the electromechanical properties of materials used in microfabrication and on the capacitive and piezoresistive transduction mechanisms of MEMS is investigated. MEMS technologies could revolutionize avionics, satellite and space applications provided that the stress conditions which can compromise the reliability of microsystems in these environments are well understood. Initial tests with MEMS revealed a vulnerability of some types of devices to radiation induced dielectric charging, a physical mechanism which also affects microelectronics, however integration of novel functional materials in microfabrication and the current trend to substitute SiO2 with high-k dielectrics in ICs pose new questions regarding reliability in radiation environments. The performance of MEMS devices with moving parts could also degrade due to radiation induced changes in the mechanical properties of the materials. It is thus necessary to investigate the effects of radiation on the properties of thin films used in microfabrication and here we report on tests with γ, high energy protons and fast neutrons radiation. Prototype SOI based MEMS magnetometers which were developed in UCL are also used as test vehicles to investigate radiation effects on the reliability of magnetically actuated and capacitively coupled MEMS.

Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors

International Nuclear Information System (INIS)

Iwaki, T; Covington, J A; Udrea, F; Ali, S Z; Guha, P K; Gardner, J W

2005-01-01

This paper describes the design of doped single crystal silicon (SCS) microhotplates for gas sensors. Resistive heaters are formed by an n+/p+ implantation into a Silicon-On-Insulator (SOI) wafer with a post-CMOS deep reactive ion etch to remove the silicon substrate. Hence they are fully compatible with CMOS technologies and allows for the integration of associated drive/detection circuitry. 2D electro-thermal models have been constructed and the results of numerical simulations using FEMLAB[reg] are given. Simulations show these micro-hotplates can operate at temperatures of 500 deg. C with a drive voltage of only 5 V and a power consumption of less than 100 mW

High rates of de novo 15q11q13 inversions in human spermatozoa

Directory of Open Access Journals (Sweden)

Molina Òscar

2012-02-01

Full Text Available Abstract Low-Copy Repeats predispose the 15q11-q13 region to non-allelic homologous recombination. We have already demonstrated that a significant percentage of Prader-Willi syndrome (PWS fathers have an increased susceptibility to generate 15q11q13 deletions in spermatozoa, suggesting the participation of intrachromatid exchanges. This work has been focused on assessing the incidence of de novo 15q11q13 inversions in spermatozoa of control donors and PWS fathers in order to determine the basal rates of inversions and to confirm the intrachromatid mechanism as the main cause of 15q11q13 anomalies. Semen samples from 10 control donors and 16 PWS fathers were processed and analyzed by triple-color FISH. Three differentially labeled BAC-clones were used: one proximal and two distal of the 15q11-q13 region. Signal associations allowed the discrimination between normal and inverted haplotypes, which were confirmed by laser-scanning confocal microscopy. Two types of inversions were detected which correspond to the segments involved in Class I and II PWS deletions. No significant differences were observed in the mean frequencies of inversions between controls and PWS fathers (3.59% ± 0.46 and 9.51% ± 0.87 vs 3.06% ± 0.33 and 10.07% ± 0.74. Individual comparisons showed significant increases of inversions in four PWS fathers (P Results suggest that the incidence of heterozygous inversion carriers in the general population could reach significant values. This situation could have important implications, as they have been described as predisposing haplotypes for genomic disorders. As a whole, results confirm the high instability of the 15q11-q13 region, which is prone to different types of de novo reorganizations by intrachromatid NAHR.

SOI Transistor measurement techniques using body contacted transistors

International Nuclear Information System (INIS)

Worley, E.R.; Williams, R.

1989-01-01

Measurements of body contacted SOI transistors are used to isolate parameters of the back channel and island edge transistor. Properties of the edge and back channel transistor have been measured before and after X-ray irradiation (ARACOR). The unique properties of the edge transistor are shown to be a result of edge geometry as confirmed by a two dimensional transistor simulator

Active mems microbeam device for gas detection

KAUST Repository

Bouchaala, Adam M.

2017-10-05

Sensors and active switches for applications in gas detection and other fields are described. The devices are based on the softening and hardening nonlinear response behaviors of microelectromechanical systems (MEMS) clamped-clamped microbeams. In that context, embodiments of gas-triggered MEMS microbeam sensors and switches are described. The microbeam devices can be coated with a Metal-Organic Framework to achieve high sensitivity. For gas sensing, an amplitude-based tracking algorithm can be used to quantify an amount of gas captured by the devices according to frequency shift. Noise analysis is also conducted according to the embodiments, which shows that the microbeam devices have high stability against thermal noise. The microbeam devices are also suitable for the generation of binary sensing information for alarming, for example.

A digital output accelerometer using MEMS-based piezoelectric accelerometers and arrayed CMOS inverters with satellite capacitors

International Nuclear Information System (INIS)

Kobayashi, T; Okada, H; Maeda, R; Itoh, T; Masuda, T

2011-01-01

The present paper describes the development of a digital output accelerometer composed of microelectromechanical systems (MEMS)-based piezoelectric accelerometers and arrayed complementary metal–oxide–semiconductor (CMOS) inverters accompanied by capacitors. The piezoelectric accelerometers were fabricated from multilayers of Pt/Ti/PZT/Pt/Ti/SiO 2 deposited on silicon-on-insulator (SOI) wafers. The fabricated piezoelectric accelerometers were connected to arrayed CMOS inverters. Each of the CMOS inverters was accompanied by a capacitor with a different capacitance called a 'satellite capacitor'. We have confirmed that the output voltage generated from the piezoelectric accelerometers can vary the output of the CMOS inverters from a high to a low level; the state of the CMOS inverters has turned from the 'off-state' into the 'on-state' when the output voltage of the piezoelectric accelerometers is larger than the threshold voltage of the CMOS inverters. We have also confirmed that the CMOS inverters accompanied by the larger satellite capacitor have become 'on-state' at a lower acceleration. On increasing the acceleration, the number of on-state CMOS inverters has increased. Assuming that the on-state and off-state of CMOS inverters correspond to logic '0' and '1', the present digital output accelerometers have expressed the accelerations of 2.0, 3.0, 5.0, and 5.5 m s −2 as digital outputs of 111, 110, 100, and 000, respectively

Miniaturized GPS/MEMS IMU integrated board

Science.gov (United States)

Lin, Ching-Fang (Inventor)

2012-01-01

This invention documents the efforts on the research and development of a miniaturized GPS/MEMS IMU integrated navigation system. A miniaturized GPS/MEMS IMU integrated navigation system is presented; Laser Dynamic Range Imager (LDRI) based alignment algorithm for space applications is discussed. Two navigation cameras are also included to measure the range and range rate which can be integrated into the GPS/MEMS IMU system to enhance the navigation solution.

Structured synthesis of MEMS using evolutionary approaches

DEFF Research Database (Denmark)

Fan, Zhun; Wang, Jiachuan; Achiche, Sofiane

2008-01-01

In this paper, we discuss the hierarchy that is involved in a typical MEMS design and how evolutionary approaches can be used to automate the hierarchical synthesis process for MEMS. The paper first introduces the flow of a structured MEMS design process and emphasizes that system-level lumped...

Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

KAUST Repository

Pirro, Luca

2015-09-01

Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

KAUST Repository

Pirro, Luca; Diab, Amer El Hajj; Ionica, Irina; Ghibaudo, Gerard; Faraone, Lorenzo; Cristoloveanu, Sorin

2015-01-01

Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

Payload characterization for CubeSat demonstration of MEMS deformable mirrors

Science.gov (United States)

Marinan, Anne; Cahoy, Kerri; Webber, Matthew; Belikov, Ruslan; Bendek, Eduardo

2014-08-01

Coronagraphic space telescopes require wavefront control systems for high-contrast imaging applications such as exoplanet direct imaging. High-actuator-count MEMS deformable mirrors (DM) are a key element of these wavefront control systems yet have not been flown in space long enough to characterize their on-orbit performance. The MEMS Deformable Mirror CubeSat Testbed is a conceptual nanosatellite demonstration of MEMS DM and wavefront sensing technology. The testbed platform is a 3U CubeSat bus. Of the 10 x 10 x 34.05 cm (3U) available volume, a 10 x 10 x 15 cm space is reserved for the optical payload. The main purpose of the payload is to characterize and calibrate the onorbit performance of a MEMS deformable mirror over an extended period of time (months). Its design incorporates both a Shack Hartmann wavefront sensor (internal laser illumination), and a focal plane sensor (used with an external aperture to image bright stars). We baseline a 32-actuator Boston Micromachines Mini deformable mirror for this mission, though the design is flexible and can be applied to mirrors from other vendors. We present the mission design and payload architecture and discuss experiment design, requirements, and performance simulations.

Measurement of the Earth tides with a MEMS gravimeter.

Science.gov (United States)

Middlemiss, R P; Samarelli, A; Paul, D J; Hough, J; Rowan, S; Hammond, G D

2016-03-31

The ability to measure tiny variations in the local gravitational acceleration allows, besides other applications, the detection of hidden hydrocarbon reserves, magma build-up before volcanic eruptions, and subterranean tunnels. Several technologies are available that achieve the sensitivities required for such applications (tens of microgal per hertz(1/2)): free-fall gravimeters, spring-based gravimeters, superconducting gravimeters, and atom interferometers. All of these devices can observe the Earth tides: the elastic deformation of the Earth's crust as a result of tidal forces. This is a universally predictable gravitational signal that requires both high sensitivity and high stability over timescales of several days to measure. All present gravimeters, however, have limitations of high cost (more than 100,000 US dollars) and high mass (more than 8 kilograms). Here we present a microelectromechanical system (MEMS) device with a sensitivity of 40 microgal per hertz(1/2) only a few cubic centimetres in size. We use it to measure the Earth tides, revealing the long-term stability of our instrument compared to any other MEMS device. MEMS accelerometers--found in most smart phones--can be mass-produced remarkably cheaply, but none are stable enough to be called a gravimeter. Our device has thus made the transition from accelerometer to gravimeter. The small size and low cost of this MEMS gravimeter suggests many applications in gravity mapping. For example, it could be mounted on a drone instead of low-flying aircraft for distributed land surveying and exploration, deployed to monitor volcanoes, or built into multi-pixel density-contrast imaging arrays.

High mechanical Q-factor measurements on silicon bulk material

Energy Technology Data Exchange (ETDEWEB)

Schwarz, Christian; Nawrodt, Ronny; Heinert, Daniel; Schroeter, Anja; Neubert, Ralf; Thuerk, Matthias; Vodel, Wolfgang; Seidel, Paul [Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, Andreas [Institut fuer Angewandte Physik, Albert-Einstein-Strasse 15, D-07745 Jena (Germany)

2008-07-01

The direct observation of gravitational waves is one of the biggest challenges in science. Current detectors are limited by different kinds of noise. One of the fundamental noise sources is thermal noise arising from the optical components. One of the most promising attempts to reduce the thermal noise contribution in future detectors will be the use of high Q-factor materials at cryogenic temperatures. Silicon seems to be the most interesting material due to its excellent optical and thermal properties. We present high Q-factor measurements on bulk samples of high purity silicon in a temperature range from 5 to 300 K. The sample dimensions vary between 76.2 mm x 12..75 mm. The Q-factor exceeds 4.10{sup 8} at 6 K. The influence of the crystal orientation, doping and the sample preparation on the Q-factor is discussed.

Topology optimized RF MEMS switches

DEFF Research Database (Denmark)

Philippine, M. A.; Zareie, H.; Sigmund, Ole

2013-01-01

Topology optimization is a rigorous and powerful method that should become a standard MEMS design tool - it can produce unique and non-intuitive designs that meet complex objectives and can dramatically improve the performance and reliability of MEMS devices. We present successful uses of topology...

Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks

Science.gov (United States)

Dogan, Numan S.

2003-01-01

The objective of this work is to design and develop Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks. We briefly report on the accomplishments in this work. We also list the impact of this work on graduate student research training/involvement.

Designing a robust high-speed CMOS-MEMS capacitive humidity sensor

International Nuclear Information System (INIS)

Lazarus, N; Fedder, G K

2012-01-01

In our previous work (Lazarus and Fedder 2011 J. Micromech. Microeng. 21 0650281), we demonstrated a CMOS-MEMS capacitive humidity sensor with a 72% improvement in sensitivity over the highest previously integrated on a CMOS die. This paper explores a series of methods for creating a faster and more manufacturable high-sensitivity capacitive humidity sensor. These techniques include adding oxide pillars to hold the plates apart, spin coating polymer to allow sensors to be fabricated more cheaply, adding a polysilicon heater and etching away excess polymer in the release holes. In most cases a tradeoff was found between sensitivity and other factors such as response time or robustness. A robust high-speed sensor was designed with a sensitivity of 0.21% change in capacitance per per cent relative humidity, while dropping the response time constant from 70 to 4s. Although less sensitive than our design, the sensor remains 17% more sensitive than the most sensitive interdigitated designs successfully integrated with CMOS. (paper)

Process Optimization for Monolithic Integration of Piezoresistive Pressure Sensor and MOSFET Amplifier with SOI Approach

International Nuclear Information System (INIS)

Kumar, V Vinoth; Dasgupta, A; Bhat, K N; KNatarajan

2006-01-01

In this paper we present the design and process optimization for fabricating piezoresitive pressure sensor and MOSFET Differential Amplifier simultaneously on the same chip. Silicon On Insulator approach has been used for realizing the membrane as well as the electronics on the same chip. The amplifier circuit has been configured in the common source connection and it has been designed with PSPICE simulation to achieve a voltage gain of about 5. In the initial set of experiments the Pressure sensor and the amplifier were fabricated on separate chips to optimize the process steps and tested in the hybrid mode. In the next set of experiments, SOI wafer having the SOI layer thickness of about 11 microns was used for realizing the membrane by anisotropic etching from the backside. The piezo-resistive pressure sensor was realized on this membrane by connecting the polysilicon resistors in the form of a Wheatstone bridge. The MOSFET source follower amplifier was also fabricated on the same SOI wafer by tailoring the process steps to suit the requirement of simultaneous fabrication of piezoresistors and the amplifier for achieving MOSFET Integrated Pressure Sensor. Reproducible results have been achieved on the SOI wafers, with the process steps developed in the laboratory. Sensitivity of 270 mV /Bar/10V, with the on chip amplifier gain of 4.5, has been achieved with this process

Quantitative Accelerated Life Testing of MEMS Accelerometers.

Science.gov (United States)

Bâzu, Marius; Gălăţeanu, Lucian; Ilian, Virgil Emil; Loicq, Jerome; Habraken, Serge; Collette, Jean-Paul

2007-11-20

Quantitative Accelerated Life Testing (QALT) is a solution for assessing thereliability of Micro Electro Mechanical Systems (MEMS). A procedure for QALT is shownin this paper and an attempt to assess the reliability level for a batch of MEMSaccelerometers is reported. The testing plan is application-driven and contains combinedtests: thermal (high temperature) and mechanical stress. Two variants of mechanical stressare used: vibration (at a fixed frequency) and tilting. Original equipment for testing at tiltingand high temperature is used. Tilting is appropriate as application-driven stress, because thetilt movement is a natural environment for devices used for automotive and aerospaceapplications. Also, tilting is used by MEMS accelerometers for anti-theft systems. The testresults demonstrated the excellent reliability of the studied devices, the failure rate in the"worst case" being smaller than 10 -7 h -1 .

Electromagnetic actuation in MEMS switches

DEFF Research Database (Denmark)

Oliveira Hansen, Roana Melina de; Mátéfi-Tempfli, Mária; Chemnitz, Steffen

. Electromagnetic actuation is a very promising approach to operate such MEMS and Power MEMS devices, due to the long range, reproducible and strong forces generated by this method, among other advantages. However, the use of electromagnetic actuation in such devices requires the use of thick magnetic films, which...

Analysis of the rectangular resonator with butterfly MMI coupler using SOI

Science.gov (United States)

Kim, Sun-Ho; Park, Jun-Hee; Kim, Eudum; Jeon, Su-Jin; Kim, Ji-Hoon; Choi, Young-Wan

2018-02-01

We propose a rectangular resonator sensor structure with butterfly MMI coupler using SOI. It consists of the rectangular resonator, total internal reflection (TIR) mirror, and the butterfly MMI coupler. The rectangular resonator is expected to be used as bio and chemical sensors because of the advantages of using MMI coupler and the absence of bending loss unlike ring resonators. The butterfly MMI coupler can miniaturize the device compared to conventional MMI by using a linear butterfly shape instead of a square in the MMI part. The width, height, and slab height of the rib type waveguide are designed to be 1.5 μm, 1.5 μm, and 0.9 μm, respectively. This structure is designed as a single mode. When designing a TIR mirror, we considered the Goos-Hänchen shift and critical angle. We designed 3:1 MMI coupler because rectangular resonator has no bending loss. The width of MMI is designed to be 4.5 μm and we optimize the length of the butterfly MMI coupler using finite-difference time-domain (FDTD) method for higher Q-factor. It has the equal performance with conventional MMI even though the length is reduced by 1/3. As a result of the simulation, Qfactor of rectangular resonator can be obtained as 7381.

MEMS and mil/aero: technology push and market pull

Science.gov (United States)

Clifford, Thomas H.

2001-04-01

MEMS offers attractive solutions to high-density fluidics, inertial, optical, switching and other demanding military/aerospace (mil/aero) challenges. However, full acceptance must confront the realities of production-scale producibility, verifiability, testability, survivability, as well as long-term reliability. Data on these `..ilities' are crucial, and are central in funding and deployment decisions. Similarly, mil/aero users must highlight specific missions, environmental exposures, and procurement issues, as well as the quirks of its designers. These issues are particularly challenging in MEMS, because of the laws of physics and business economics, as well as the risks of deploying leading-edge technology into no-fail applications. This paper highlights mil/aero requirements, and suggests reliability/qualification protocols, to guide development effort and to reassure mil/aero users that MEMS labs are mindful of the necessary realities.

Optimization and simulation of MEMS rectilinear ion trap

Directory of Open Access Journals (Sweden)

Huang Gang

2015-04-01

Full Text Available In this paper, the design of a MEMS rectilinear ion trap was optimized under simulated conditions. The size range of the MEMS rectilinear ion trap’s electrodes studied in this paper is measured at micron scale. SIMION software was used to simulate the MEMS rectilinear ion trap with different sizes and different radio-frequency signals. The ion-trapping efficiencies of the ion trap under these different simulation conditions were obtained. The ion-trapping efficiencies were compared to determine the performance of the MEMS rectilinear ion trap in different conditions and to find the optimum conditions. The simulation results show that for the ion trap at micron scale or smaller, the optimized length–width ratio was 0.8, and a higher frequency of radio-frequency signal is necessary to obtain a higher ion-trapping efficiency. These results have a guiding role in the process of developing MEMS rectilinear ion traps, and great application prospects in the research fields of the MEMS rectilinear ion trap and the MEMS mass spectrometer.

Electrostatic Comb-Drive Actuator with High In-Plane Translational Velocity

Directory of Open Access Journals (Sweden)

Yomna M. Eltagoury

2016-10-01

Full Text Available This work reports the design and opto-mechanical characterization of high velocity comb-drive actuators producing in-plane motion and fabricated using the technology of deep reactive ion etching (DRIE of silicon-on-insulator (SOI substrate. The actuators drive vertical mirrors acting on optical beams propagating in-plane with respect to the substrate. The actuator-mirror device is a fabrication on an SOI wafer with 80 μm etching depth, surface roughness of about 15 nm peak to valley and etching verticality that is better than 0.1 degree. The travel range of the actuators is extracted using an optical method based on optical cavity response and accounting for the diffraction effect. One design achieves a travel range of approximately 9.1 µm at a resonance frequency of approximately 26.1 kHz, while the second design achieves about 2 µm at 93.5 kHz. The two specific designs reported achieve peak velocities of about 1.48 and 1.18 m/s, respectively, which is the highest product of the travel range and frequency for an in-plane microelectromechanical system (MEMS motion under atmospheric pressure, to the best of the authors’ knowledge. The first design possesses high spring linearity over its travel range with about 350 ppm change in the resonance frequency, while the second design achieves higher resonance frequency on the expense of linearity. The theoretical predications and the experimental results show good agreement.

Effects of q and high beta on tokamak stability

International Nuclear Information System (INIS)

Brickhouse, N.S.; Callen, J.D.; Dexter, R.N.

1984-08-01

In the Columbia University Torus II tokamak plasmas have been studied with volume averaged toroidal beta values as high as 15%. Experimental equilibria have been compared with a 2D free boundary MHD equilibrium code PSEC. The stability of these equilibria has been computed using PEST, the predictions of which are compatible with an observed instability in Torus II which may be characterized as a high toroidal mode number ballooning fluctuation. In the University of Wisconsin Tokapole II tokamak disruptive instability behavior is investigated, with plasma able to be confined on closed magnetic surfaces in the scrape-off region, as the cylindrical edge safety factor is varied from q approx. 3 to q approx. 0.5. It is observed that at q/sub a/ approx. 3 major disruption activity occurs without current terminations, at q/sub a/ less than or equal to 2 well-confined plasmas are obtained without major disruption, and at q/sub a/ approx. 0.5 only partial reconnection accompanies minor disruptions

Additive direct-write microfabrication for MEMS: A review

Science.gov (United States)

Teh, Kwok Siong

2017-12-01

Direct-write additive manufacturing refers to a rich and growing repertoire of well-established fabrication techniques that builds solid objects directly from computer- generated solid models without elaborate intermediate fabrication steps. At the macroscale, direct-write techniques such as stereolithography, selective laser sintering, fused deposition modeling ink-jet printing, and laminated object manufacturing have significantly reduced concept-to-product lead time, enabled complex geometries, and importantly, has led to the renaissance in fabrication known as the maker movement. The technological premises of all direct-write additive manufacturing are identical—converting computer generated three-dimensional models into layers of two-dimensional planes or slices, which are then reconstructed sequentially into threedimensional solid objects in a layer-by-layer format. The key differences between the various additive manufacturing techniques are the means of creating the finished layers and the ancillary processes that accompany them. While still at its infancy, direct-write additive manufacturing techniques at the microscale have the potential to significantly lower the barrier-of-entry—in terms of cost, time and training—for the prototyping and fabrication of MEMS parts that have larger dimensions, high aspect ratios, and complex shapes. In recent years, significant advancements in materials chemistry, laser technology, heat and fluid modeling, and control systems have enabled additive manufacturing to achieve higher resolutions at the micrometer and nanometer length scales to be a viable technology for MEMS fabrication. Compared to traditional MEMS processes that rely heavily on expensive equipment and time-consuming steps, direct-write additive manufacturing techniques allow for rapid design-to-prototype realization by limiting or circumventing the need for cleanrooms, photolithography and extensive training. With current direct-write additive

A low on-resistance SOI LDMOS using a trench gate and a recessed drain

International Nuclear Information System (INIS)

Ge Rui; Luo Xiaorong; Jiang Yongheng; Zhou Kun; Wang Pei; Wang Qi; Wang Yuangang; Zhang Bo; Li Zhaoji

2012-01-01

An integrable silicon-on-insulator (SOI) power lateral MOSFET with a trench gate and a recessed drain (TGRD MOSFET) is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide (BOX) and the recessed drain reduce the specific on-resistance (R on,sp ) by widening the vertical conduction area and shortening the extra current path. The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage (BV) of 97 V and R on,sp of 0.985 mΩ·cm 2 (V GS = 5 V) are obtained for a TGRD MOSFET with 6.5 μm half-cell pitch. Compared with the trench gate SOI MOSFET (TG MOSFET) and the conventional MOSFET, R on,sp of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a trench gate and a trench drain (TGTD MOSFET), BV of the TGRD MOSFET increases by 37% at the same R on,sp . (semiconductor devices)

Fully etched apodized grating coupler on the SOI platform with −058 dB coupling efficiency

DEFF Research Database (Denmark)

Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

2014-01-01

We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon- on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity andcoupling angle dependence are experimentally investiga......We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon- on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity andcoupling angle dependence are experimentally...

A monolithic pixel sensor (TRAPPISTe-2) for particle physics instrumentation in OKI 0.2μm SOI technology

Science.gov (United States)

Soung Yee, L.; Alvarez, P.; Martin, E.; Cortina, E.; Ferrer, C.

2012-12-01

A monolithic active pixel sensor for charged particle tracking has been developed within the frame of a research and development project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology). TRAPPISTe aims to study the feasibility of developing a monolithic pixel sensor with SOI technology. TRAPPISTe-2 is the second prototype in this series and was fabricated with an OKI 0.20μm fully depleted (FD-SOI) CMOS process. This device contains test transistors and amplifiers, as well as two pixel matrices with integrated 3-transistor and amplifier readout electronics. The results presented are based on the first electrical measurements performed on the test structures and laser measurements on the pixel matrices.

High-uniformity centimeter-wide Si etching method for MEMS devices with large opening elements

Science.gov (United States)

Okamoto, Yuki; Tohyama, Yukiya; Inagaki, Shunsuke; Takiguchi, Mikio; Ono, Tomoki; Lebrasseur, Eric; Mita, Yoshio

2018-04-01

We propose a compensated mesh pattern filling method to achieve highly uniform wafer depth etching (over hundreds of microns) with a large-area opening (over centimeter). The mesh opening diameter is gradually changed between the center and the edge of a large etching area. Using such a design, the etching depth distribution depending on sidewall distance (known as the local loading effect) inversely compensates for the over-centimeter-scale etching depth distribution, known as the global or within-die(chip)-scale loading effect. Only a single DRIE with test structure patterns provides a micro-electromechanical systems (MEMS) designer with the etched depth dependence on the mesh opening size as well as on the distance from the chip edge, and the designer only has to set the opening size so as to obtain a uniform etching depth over the entire chip. This method is useful when process optimization cannot be performed, such as in the cases of using standard conditions for a foundry service and of short turn-around-time prototyping. To demonstrate, a large MEMS mirror that needed over 1 cm2 of backside etching was successfully fabricated using as-is-provided DRIE conditions.

Using MEMS Capacitive Switches in Tunable RF Amplifiers

Directory of Open Access Journals (Sweden)

Danson John

2006-01-01

Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

High-Q plasmonic bottle microresonator

Science.gov (United States)

Mohd Nasir, M. Narizee; Ding, Ming; Murugan, G. Senthil; Zervas, Michalis N.

2014-03-01

In this paper, we demonstrate a hybrid plasmonic bottle microresonator (PBMR) which supports whispering gallery modes (WGMs) along with surface plasmon waves (SPWs) for high performance optical sensor applications. The BMR was fabricated through "soften-and-compress" technique with a thin gold layer deposited on top of the resonator. A polarization-resolved measurement was set-up in order to fully characterize the fabricated PBMR. Initially, the uncoated BMR with waist diameter of 181 μm, stem diameter of 125 μm and length of 400 μm was fabricated and then gold film was deposited on the surface. Due to surface curvature, the gold film covering half of the BMR had a characteristic meniscus shape and maximum thickness of 30 nm. The meniscus provides appropriately tapered edges which facilitate the adiabatic transformation of BMR WGMs to SPWs and vice versa. This results in low transition losses, which combined with partially-metal-coated resonator, can result in high hybrid-PBMR Q's. The transmission spectra of the hybrid PBMR are dramatically different to the original uncoated BMR. Under TE(TM) excitation, the PBMR showed composite resonances with Q of ~2100(850) and almost identical ~ 3 nm FSR. We have accurately fitted the observed transmission resonances with Lorentzian-shaped curves and showed that the TE and TM excitations are actually composite resonances comprise of two and three partially overlapping resonances with Q's in excess of 2900 and 2500, respectively. To the best of our knowledge these are the highest Qs observed in plasmonic microcavities.

MEMS/MOEMS foundry services at INO

Science.gov (United States)

García-Blanco, Sonia; Ilias, Samir; Williamson, Fraser; Généreux, Francis; Le Noc, Loïc; Poirier, Michel; Proulx, Christian; Tremblay, Bruno; Provençal, Francis; Desroches, Yan; Caron, Jean-Sol; Larouche, Carl; Beaupré, Patrick; Fortin, Benoit; Topart, Patrice; Picard, Francis; Alain, Christine; Pope, Timothy; Jerominek, Hubert

2010-06-01

In the MEMS manufacturing world, the "fabless" model is getting increasing importance in recent years as a way for MEMS manufactures and startups to minimize equipment costs and initial capital investment. In order for this model to be successful, the fabless company needs to work closely with a MEMS foundry service provider. Due to the lack of standardization in MEMS processes, as opposed to CMOS microfabrication, the experience in MEMS development processes and the flexibility of the MEMS foundry are of vital importance. A multidisciplinary team together with a complete microfabrication toolset allows INO to offer unique MEMS foundry services to fabless companies looking for low to mid-volume production. Companies that benefit from their own microfabrication facilities can also be interested in INO's assistance in conducting their research and development work during periods where production runs keep their whole staff busy. Services include design, prototyping, fabrication, packaging, and testing of various MEMS and MOEMS devices on wafers fully compatible with CMOS integration. Wafer diameters ranging typically from 1 inch to 6 inches can be accepted while 8-inch wafers can be processed in some instances. Standard microfabrication techniques such as metal, dielectric, and semiconductor film deposition and etching as well as photolithographic pattern transfer are available. A stepper permits reduction of the critical dimension to around 0.4 μm. Metals deposited by vacuum deposition methods include Au, Ag, Al, Al alloys, Ti, Cr, Cu, Mo, MoCr, Ni, Pt, and V with thickness varying from 5 nm to 2 μm. Electroplating of several materials including Ni, Au and In is also available. In addition, INO has developed and built a gold black deposition facility to answer customer's needs for broadband microbolometric detectors. The gold black deposited presents specular reflectance of less than 10% in the wavelength range from 0.2 μm to 100 μm with thickness ranging from

MemBrain: An Easy-to-Use Online Webserver for Transmembrane Protein Structure Prediction

Science.gov (United States)

Yin, Xi; Yang, Jing; Xiao, Feng; Yang, Yang; Shen, Hong-Bin

2018-03-01

Membrane proteins are an important kind of proteins embedded in the membranes of cells and play crucial roles in living organisms, such as ion channels, transporters, receptors. Because it is difficult to determinate the membrane protein's structure by wet-lab experiments, accurate and fast amino acid sequence-based computational methods are highly desired. In this paper, we report an online prediction tool called MemBrain, whose input is the amino acid sequence. MemBrain consists of specialized modules for predicting transmembrane helices, residue-residue contacts and relative accessible surface area of α-helical membrane proteins. MemBrain achieves a prediction accuracy of 97.9% of A TMH, 87.1% of A P, 3.2 ± 3.0 of N-score, 3.1 ± 2.8 of C-score. MemBrain-Contact obtains 62%/64.1% prediction accuracy on training and independent dataset on top L/5 contact prediction, respectively. And MemBrain-Rasa achieves Pearson correlation coefficient of 0.733 and its mean absolute error of 13.593. These prediction results provide valuable hints for revealing the structure and function of membrane proteins. MemBrain web server is free for academic use and available at www.csbio.sjtu.edu.cn/bioinf/MemBrain/. [Figure not available: see fulltext.

Advanced mechatronics and MEMS devices II

CERN Document Server

Wei, Bin

2017-01-01

This book introduces the state-of-the-art technologies in mechatronics, robotics, and MEMS devices in order to improve their methodologies. It provides a follow-up to "Advanced Mechatronics and MEMS Devices" (2013) with an exploration of the most up-to-date technologies and their applications, shown through examples that give readers insights and lessons learned from actual projects. Researchers on mechatronics, robotics, and MEMS as well as graduate students in mechanical engineering will find chapters on: Fundamental design and working principles on MEMS accelerometers Innovative mobile technologies Force/tactile sensors development Control schemes for reconfigurable robotic systems Inertial microfluidics Piezoelectric force sensors and dynamic calibration techniques ...And more. Authors explore applications in the areas of agriculture, biomedicine, advanced manufacturing, and space. Micro-assembly for current and future industries is also considered, as well as the design and development of micro and intel...

Videometrics-based Detection of Vibration Linearity in MEMS Gyroscope

Directory of Open Access Journals (Sweden)

Yong Zhou

2011-05-01

Full Text Available MEMS gyroscope performs as a sort of sensor to detect angular velocity, with diverse applications in engineering including vehicle and intelligent traffic etc. A balanced vibration of driving module excited by electrostatic driving signal is the base MEMS gyroscope's performance. In order to analyze the linear property of vibration in MEMS Gyroscope, a method of computer vision measuring is applied with the help of high-speed vidicon to obtain video of linear vibration of driving module in gyroscope, under the driving voltage signal of inherent frequency and amplitude linearly increasing. By means of image processing, target identifying, and motion parameter extracting from the obtained video, vibration curve with time variation is acquired. And then, linearity of this vibration system can be analyzed by focusing on the amplitude value of vibration responding to the amplitude variation of driving voltage signal.

High-Q microwave photonic filter with a tuned modulator.

Science.gov (United States)

Capmany, J; Mora, J; Ortega, B; Pastor, D

2005-09-01

We propose the use of tuned electro-optic or electroabsorption external modulators to implement high-quality (high-Q) factor, single-bandpass photonic filters for microwave signals. Using this approach, we experimentally demonstrate a transversal finite impulse response with a Q factor of 237. This is to our knowledge the highest value ever reported for a passive finite impulse-response microwave photonic filter.

The Micronium-A Musical MEMS instrument

NARCIS (Netherlands)

Engelen, Johannes Bernardus Charles; de Boer, Hans L.; de Boer, Hylco; Beekman, Jethro G.; Fortgens, Laurens C.; de Graaf, Derk B.; Vocke, Sander; Abelmann, Leon

The Micronium is a musical instrument fabricated from silicon using microelectromechanical system (MEMS) technology. It is—to the best of our knowledge—the first musical micro-instrument fabricated using MEMS technology, where the actual sound is generated by mechanical microstructures. The

High-Q energy trapping of temperature-stable shear waves with Lamé cross-sectional polarization in a single crystal silicon waveguide

Science.gov (United States)

Tabrizian, R.; Daruwalla, A.; Ayazi, F.

2016-03-01

A multi-port electrostatically driven silicon acoustic cavity is implemented that efficiently traps the energy of a temperature-stable eigen-mode with Lamé cross-sectional polarization. Dispersive behavior of propagating and evanescent guided waves in a ⟨100⟩-aligned single crystal silicon waveguide is used to engineer the acoustic energy distribution of a specific shear eigen-mode that is well known for its low temperature sensitivity when implemented in doped single crystal silicon. Such an acoustic energy trapping in the central region of the acoustic cavity geometry and far from substrate obviates the need for narrow tethers that are conventionally used for non-destructive and high quality factor (Q) energy suspension in MEMS resonators; therefore, the acoustically engineered waveguide can simultaneously serve as in-situ self-oven by passing large uniformly distributed DC currents through its body and without any concern about perturbing the mode shape or deforming narrow supports. Such a stable thermo-structural performance besides large turnover temperatures than can be realized in Lamé eigen-modes make this device suitable for implementation of ultra-stable oven-controlled oscillators. 78 MHz prototypes implemented in arsenic-doped single crystal silicon substrates with different resistivity are transduced by in- and out-of-plane narrow-gap capacitive ports, showing high Q of ˜43k. The low resistivity device shows an overall temperature-induced frequency drift of 200 ppm over the range of -20 °C to 80 °C, which is ˜15× smaller compared to overall frequency drift measured for the similar yet high resistivity device in the same temperature range. Furthermore, a frequency tuning of ˜2100 ppm is achieved in high resistivity device by passing 45 mA DC current through its body. Continuous operation of the device under such a self-ovenizing current over 10 days did not induce frequency instability or degradation in Q.

Continuous Process for the Etching, Rinsing and Drying of MEMS Using Supercritical Carbon Dioxide

Energy Technology Data Exchange (ETDEWEB)

Min, Seon Ki; Han, Gap Su; You, Seong-sik [Korea University of Technology and Education, Cheonan (Korea, Republic of)

2015-10-15

The previous etching, rinsing and drying processes of wafers for MEMS (microelectromechanical system) using SC-CO{sub 2} (supercritical-CO{sub 2}) consists of two steps. Firstly, MEMS-wafers are etched by organic solvent in a separate etching equipment from the high pressure dryer and then moved to the high pressure dryer to rinse and dry them using SC-CO{sub 2}. We found that the previous two step process could be applied to etch and dry wafers for MEMS but could not confirm the reproducibility through several experiments. We thought the cause of that was the stiction of structures occurring due to vaporization of the etching solvent during moving MEMS wafer to high pressure dryer after etching it outside. In order to improve the structure stiction problem, we designed a continuous process for etching, rinsing and drying MEMS-wafers using SC-CO{sub 2} without moving them. And we also wanted to know relations of states of carbon dioxide (gas, liquid, supercritical fluid) to the structure stiction problem. In the case of using gas carbon dioxide (3 MPa, 25 .deg. C) as an etching solvent, we could obtain well-treated MEMS-wafers without stiction and confirm the reproducibility of experimental results. The quantity of rinsing solvent used could be also reduced compared with the previous technology. In the case of using liquid carbon dioxide (3 MPa, 5 .deg. C), we could not obtain well-treated MEMS-wafers without stiction due to the phase separation of between liquid carbon dioxide and etching co-solvent(acetone). In the case of using SC-CO{sub 2} (7.5 Mpa, 40 .deg. C), we had as good results as those of the case using gas-CO{sub 2}. Besides the processing time was shortened compared with that of the case of using gas-CO{sub 2}.

Influence of edge effects on single event upset susceptibility of SOI SRAMs

International Nuclear Information System (INIS)

Gu, Song; Liu, Jie; Zhao, Fazhan; Zhang, Zhangang; Bi, Jinshun; Geng, Chao; Hou, Mingdong; Liu, Gang; Liu, Tianqi; Xi, Kai

2015-01-01

An experimental investigation of the single event upset (SEU) susceptibility for heavy ions at tilted incidence was performed. The differences of SEU cross-sections between tilted incidence and normal incidence at equivalent effective linear energy transfer were 21% and 57% for the silicon-on-insulator (SOI) static random access memories (SRAMs) of 0.5 μm and 0.18 μm feature size, respectively. The difference of SEU cross-section raised dramatically with increasing tilt angle for SOI SRAM of deep-submicron technology. The result of CRÈME-MC simulation for tilted irradiation of the sensitive volume indicates that the energy deposition spectrum has a substantial tail extending into the low energy region. The experimental results show that the influence of edge effects on SEU susceptibility cannot be ignored in particular with device scaling down

Using MEMS Capacitive Switches in Tunable RF Amplifiers

OpenAIRE

Danson John; Plett Calvin; Tait Niall

2006-01-01

A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB no...

Method for spatially modulating X-ray pulses using MEMS-based X-ray optics

Science.gov (United States)

Lopez, Daniel; Shenoy, Gopal; Wang, Jin; Walko, Donald A.; Jung, Il-Woong; Mukhopadhyay, Deepkishore

2015-03-10

A method and apparatus are provided for spatially modulating X-rays or X-ray pulses using microelectromechanical systems (MEMS) based X-ray optics. A torsionally-oscillating MEMS micromirror and a method of leveraging the grazing-angle reflection property are provided to modulate X-ray pulses with a high-degree of controllability.

Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs

Science.gov (United States)

Hubert, A.; Bawedin, M.; Cristoloveanu, S.; Ernst, T.

2009-12-01

The difficult scaling of bulk Dynamic Random Access Memories (DRAMs) has led to various concepts of capacitor-less single-transistor (1T) architectures based on SOI transistor floating-body effects. Amongst them, the Meta-Stable Dip RAM (MSDRAM), which is a double-gate Fully Depleted SOI transistor, exhibits attractive performances. The Meta-Stable Dip effect results from the reduced junction leakage current and the long carrier generation lifetime in thin silicon film transistors. In this study, various devices with different gate lengths, widths and silicon film thicknesses have been systematically explored, revealing the impact of transistor dimensions on the MSD effect. These experimental results are discussed and validated by two-dimensional numerical simulations. It is found that MSD is maintained for small dimensions even in standard SOI MOSFETs, although specific optimizations are expected to enhance MSDRAM performances.

Analyses of the radiation-caused characteristics change in SOI MOSFETs using field shield isolation

International Nuclear Information System (INIS)

Hirano, Yuuichi; Maeda, Shigeru; Fernandez, Warren; Iwamatsu, Toshiaki; Yamaguchi, Yasuo; Maegawa, Shigeto; Nishimura, Tadashi

1999-01-01

Reliability against radiation ia an important issue in silicon on insulator metal oxide semiconductor field effect transistors (SOI MOSFETs) used in satellites and nuclear power plants and so forth which are severely exposed to radiation. Radiation-caused characteristic change related to the isolation-edge in an irradiated environment was analyzed on SOI MOSFETs. Moreover short channel effects for an irradiated environment were investigated by simulations. It was revealed that the leakage current which was observed in local oxidation of silicon (LOCOS) isolated SOI MOSFETs was successfully suppressed by using field shield isolation. Simulated potential indicated that the potential rise at the LOCOS edge can not be seen in the case of field shield isolation edge which does not have physical isolation. Also it was found that the threshold voltage shift caused by radiation in short channel regime is severer than that in long regime channel. In transistors with a channel length of 0.18μm, a potential rise of the body region by radiation-induced trapped holes can be seen in comparison with that of 1.0μm. As a result, we must consider these effects for designing deep submicron devices used in an irradiated environment. (author)

Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

Energy Technology Data Exchange (ETDEWEB)

Naumova, O. V., E-mail: naumova@isp.nsc.ru; Zaitseva, E. G.; Fomin, B. I.; Ilnitsky, M. A.; Popov, V. P. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2015-10-15

The electron mobility µ{sub eff} in the accumulation mode is investigated for undepleted and fully depleted double-gate n{sup +}–n–n{sup +} silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ{sub eff} be replaced with the dependence on the density N{sub e} of induced charge carriers. It is shown that the dependences µ{sub eff}(N{sub e}) can be approximated by the power functions µ{sub eff}(N{sub e}) ∝ N{sub e}{sup -n}, where the exponent n is determined by the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ{sub eff}(N{sub e}) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms.

A review of vibration-based MEMS piezoelectric energy harvesters

Energy Technology Data Exchange (ETDEWEB)

Saadon, Salem; Sidek, Othman [Collaborative Microelectronic Design Excellence Center (CEDEC), School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang (Malaysia)

2011-01-15

The simplicity associated with the piezoelectric micro-generators makes it very attractive for MEMS applications, especially for remote systems. In this paper we reviewed the work carried out by researchers during the last three years. The improvements in experimental results obtained in the vibration-based MEMS piezoelectric energy harvesters show very good scope for MEMS piezoelectric harvesters in the field of power MEMS in the near future. (author)

New Insights into Fully-Depleted SOI Transistor Response During Total Dose Irradiation

International Nuclear Information System (INIS)

Burns, J.A.; Dodd, P.E.; Keast, C.L.; Schwank, J.R.; Shaneyfelt, M.R.; Wyatt, P.W.

1999-01-01

Worst-case bias configuration for total-dose testing fully-depleted SOI transistors was found to be process dependent. No evidence was found for total-dose induced snap back. These results have implications for hardness assurance testing

U.S. Army Corrosion Office's storage and quality requirements for military MEMS program

Science.gov (United States)

Zunino, J. L., III; Skelton, D. R.

2007-04-01

As the Army transforms into a more lethal, lighter and agile force, the technologies that support these systems must decrease in size while increasing in intelligence. Micro-electromechanical systems (MEMS) are one such technology that the Army and DOD will rely on heavily to accomplish these objectives. Conditions for utilization of MEMS by the military are unique. Operational and storage environments for the military are significantly different than those found in the commercial sector. Issues unique to the military include; high G-forces during gun launch, extreme temperature and humidity ranges, extended periods of inactivity (20 years plus) and interaction with explosives and propellants. The military operational environments in which MEMS will be stored or required to function are extreme and far surpass any commercial operating conditions. Security and encryption are a must for all MEMS communication, tracking, or data reporting devices employed by the military. Current and future military applications of MEMS devices include safety and arming devices, fuzing devices, various guidance systems, sensors/detectors, inertial measurement units, tracking devices, radio frequency devices, wireless Radio Frequency Identifications (RFIDs) and network systems, GPS's, radar systems, mobile base systems and information technology. MEMS embedded into these weapons systems will provide the military with new levels of speed, awareness, lethality, and information dissemination. The system capabilities enhanced by MEMS will translate directly into tactical and strategic military advantages.

Characterization of low temperature deposited atomic layer deposition TiO2 for MEMS applications

NARCIS (Netherlands)

Huang, Y.; Pandraud, G.; Sarro, P.M.

2012-01-01

TiO2 is an interesting and promising material for micro-/nanoelectromechanical systems (MEMS/NEMS). For high performance and reliable MEMS/NEMS, optimization of the optical characteristics, mechanical stress, and especially surface smoothness of TiO2 is required. To overcome the roughness issue of

System-Level Modelling and Simulation of MEMS-Based Sensors

DEFF Research Database (Denmark)

Virk, Kashif M.; Madsen, Jan; Shafique, Mohammad

2005-01-01

The growing complexity of MEMS devices and their increased used in embedded systems (e.g., wireless integrated sensor networks) demands a disciplined aproach for MEMS design as well as the development of techniques for system-level modeling of these devices so that a seamless integration with the......The growing complexity of MEMS devices and their increased used in embedded systems (e.g., wireless integrated sensor networks) demands a disciplined aproach for MEMS design as well as the development of techniques for system-level modeling of these devices so that a seamless integration...... with the existing embedded system design methodologies is possible. In this paper, we present a MEMS design methodology that uses VHDL-AMS based system-level model of a MEMS device as a starting point and combines the top-down and bottom-up design approaches for design, verification, and optimization...

Creep characterization of Al alloy thin films for use in RF-MEMS switches

NARCIS (Netherlands)

Modlinski, R.; Witvrouw, A.; Ratchev, P.; Puers, R.; Toonder, den J.M.J.; Wolf, I.C.D.Y.M.

2004-01-01

Creep is expected to be a major reliability problem in some MEMS, as for example RF-MEMS switches, especially at high RF powers. For this reason it should be avoided to use creep sensitive materials in these devices. In this paper we report on creep studies on Al-alloys, materials that are often

A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

Science.gov (United States)

Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

2015-05-01

This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

New Trends on MEMS Sensor Technology for Harsh Environment Applications

Directory of Open Access Journals (Sweden)

Patricia M. NIEVA

2007-10-01

Full Text Available MEMS and NEMS sensor systems that can operate in the presence of high temperatures, corrosive media, and/or high radiation hold great promise for harsh environment applications. They would reduce weight, improve machine reliability and reduce cost in strategic market sectors such as automotive, avionics, oil well logging, and nuclear power. This paper presents a review of the recent advances in harsh-environment MEMS and NEMS sensors focusing on materials and devices. Special emphasis is put on high-temperature operation. Wide-bandgap semiconductor materials for high temperature applications are discussed from the device point of view. Micro-opto mechanical systems (MOEMS are presented as a new trend for high temperature applications. As an example of a harsh environment MOEMS sensor, a vibration sensor is presented.

Bimetallic nanoparticles for surface modification and lubrication of MEMS switch contacts

International Nuclear Information System (INIS)

Patton, Steven T; Hu Jianjun; Slocik, Joseph M; Campbell, Angela; Naik, Rajesh R; Voevodin, Andrey A

2008-01-01

Reliability continues to be a critical issue in microelectromechanical systems (MEMS) switches. Failure mechanisms include high contact resistance (R), high adhesion, melting/shorting, and contact erosion. Little previous work has addressed the lubrication of MEMS switches. In this study, bimetallic nanoparticles (NPs) are synthesized using a biotemplated approach and deposited on Au MEMS switch contacts as a nanoparticle-based lubricant. Bimetallic nanoparticles are comprised of a metallic core (∼10 nm diameter gold nanoparticle) with smaller metallic nanoparticles (∼2-3 nm diameter Pd nanoparticles) populating the core surface. Adhesion and resistance (R) were measured during hot switching experiments at low (10 μA) and high (1 mA) current. The Au/Pd NP coated contacts led to reduced adhesion as compared to pure Au contacts with a compromise of slightly higher R. For switches held in the closed position at low current, R gradually decreased over tens of seconds due to increased van der Waals force and growth of the real area of contact with temporal effects being dominant over load effects. Contact behavior transitioned from 'Pd-like' to 'Au-like' during low current cycling experiments. Melting at high current resulted in rapid formation of large real contact area, low and stable R, and minimal effect of load on R. Durability at high current was excellent with no failure through 10 6 hot switching cycles. Improvement at high current is due to controlled nanoscale surface roughness that spreads current through multiple nanocontacts, which restricts the size of melting regions and causes termination of nanowire growth (prevents shorting) during contact opening. Based on these results, bimetallic NPs show excellent potential as surface modifiers/lubricants for MEMS switch contacts

Preventing Raman Lasing in High-Q WGM Resonators

Science.gov (United States)

Savchenkov, Anatoliy; Matsko, Andrey; Strekalov, Dmitry; Maleki, Lute

2007-01-01

A generic design has been conceived to suppress the Raman effect in whispering- gallery-mode (WGM) optical resonators that have high values of the resonance quality factor (Q). Although it is possible to exploit the Raman effect (even striving to maximize the Raman gain to obtain Raman lasing), the present innovation is intended to satisfy a need that arises in applications in which the Raman effect inhibits the realization of the full potential of WGM resonators as frequency-selection components. Heretofore, in such applications, it has been necessary to operate high-Q WGM resonators at unattractively low power levels to prevent Raman lasing. (The Raman-lasing thresholds of WGM optical resonators are very low and are approximately proportional to Q(sup -2)). Heretofore, two ways of preventing Raman lasting at high power levels have been known, but both entail significant disadvantages: A resonator can be designed so that the optical field is spread over a relatively large mode volume to bring the power density below the threshold. For any given combination of Q and power level, there is certain mode volume wherein Raman lasing does not start. Unfortunately, a resonator that has a large mode volume also has a high spectral density, which is undesirable in a typical photonic application. A resonator can be cooled to the temperature of liquid helium, where the Raman spectrum is narrower and, therefore, the Raman gain is lower. However, liquid-helium cooling is inconvenient. The present design overcomes these disadvantages, making it possible to operate a low-spectral-density (even a single-mode) WGM resonator at a relatively high power level at room temperature, without risk of Raman lasing.

Packaging of MEMS/MOEMS and nanodevices: reliability, testing, and characterization aspects

Science.gov (United States)

Tekin, Tolga; Ngo, Ha-Duong; Wittler, Olaf; Bouhlal, Bouchaib; Lang, Klaus-Dieter

2011-02-01

The last decade witnessed an explosive growth in research and development efforts devoted to MEMS devices and packaging. The successfully developed MEMS devices are, for example inkjet, pressure sensors, silicon microphones, accelerometers, gyroscopes, MOEMS, micro fuel cells and emerging MEMS. For the next decade, MEMS/MOEMS and nanodevice based products will penetrate into IT, telecommunications, automotive, defense, life sciences, medical and implantable applications. Forecasts say the MEMS market to be $14 billion by 2012. The packaging cost of MEMS/MOEMS products in general is about 70 percent. Unlike today's electronics IC packaging, their packaging are custom-built and difficult due to the moving structural elements. In order for the moving elements of a MEMS device to move effectively in a well-controlled atmosphere, hermetic sealing of the MEMS device in a cap is necessary. For some MEMS devices, such as resonators and gyroscopes, vacuum packaging is required. Usually, the cap is processed at the wafer level, and thus MEMS packaging is truly a wafer level packaging. In terms of MEMS/MOEMS and nanodevice packaging, there are still many critical issues need to be addressed due to the increasing integration density supported by 3D heterogeneous integration of multi-physic components/layers consisting of photonics, electronics, rf, plasmonics, and wireless. The infrastructure of MEMS/MOEMS and nanodevices and their packaging is not well established yet. Generic packaging platform technologies are not available. Some of critical issues have been studied intensively in the last years. In this paper we will discuss about processes, reliability, testing and characterization of MEMS/MOEMS and nanodevice packaging.

MEMS-based microspectrometer technologies for NIR and MIR wavelengths

International Nuclear Information System (INIS)

Schuler, Leo P; Milne, Jason S; Dell, John M; Faraone, Lorenzo

2009-01-01

Commercially manufactured near-infrared (NIR) instruments became available about 50 years ago. While they have been designed for laboratory use in a controlled environment and boast high performance, they are generally bulky, fragile and maintenance intensive, and therefore expensive to purchase and maintain. Micromachining is a powerful technique to fabricate micromechanical parts such as integrated circuits. It was perfected in the 1980s and led to the invention of micro electro mechanical systems (MEMSs). The three characteristic features of MEMS fabrication technologies are miniaturization, multiplicity and microelectronics. Combined, these features allow the batch production of compact and rugged devices with integrated intelligence. In order to build more compact, more rugged and less expensive NIR instruments, MEMS technology has been successfully integrated into a range of new devices. In the first part of this paper we discuss the UWA MEMS-based Fabry-Perot spectrometer, its design and issues to be solved. MEMS-based Fabry-Perot filters primarily isolate certain wavelengths by sweeping across an incident spectrum and the resulting monochromatic signal is detected by a broadband detector. In the second part, we discuss other microspectrometers including other Fabry-Perot spectrometer designs, time multiplexing devices and mixed time/space multiplexing devices. (topical review)

Resonant Magnetic Field Sensors Based On MEMS Technology

Directory of Open Access Journals (Sweden)

Elías Manjarrez

2009-09-01

Full Text Available Microelectromechanical systems (MEMS technology allows the integration of magnetic field sensors with electronic components, which presents important advantages such as small size, light weight, minimum power consumption, low cost, better sensitivity and high resolution. We present a discussion and review of resonant magnetic field sensors based on MEMS technology. In practice, these sensors exploit the Lorentz force in order to detect external magnetic fields through the displacement of resonant structures, which are measured with optical, capacitive, and piezoresistive sensing techniques. From these, the optical sensing presents immunity to electromagnetic interference (EMI and reduces the read-out electronic complexity. Moreover, piezoresistive sensing requires an easy fabrication process as well as a standard packaging. A description of the operation mechanisms, advantages and drawbacks of each sensor is considered. MEMS magnetic field sensors are a potential alternative for numerous applications, including the automotive industry, military, medical, telecommunications, oceanographic, spatial, and environment science. In addition, future markets will need the development of several sensors on a single chip for measuring different parameters such as the magnetic field, pressure, temperature and acceleration.

Resonant Magnetic Field Sensors Based On MEMS Technology

Science.gov (United States)

Herrera-May, Agustín L.; Aguilera-Cortés, Luz A.; García-Ramírez, Pedro J.; Manjarrez, Elías

2009-01-01

Microelectromechanical systems (MEMS) technology allows the integration of magnetic field sensors with electronic components, which presents important advantages such as small size, light weight, minimum power consumption, low cost, better sensitivity and high resolution. We present a discussion and review of resonant magnetic field sensors based on MEMS technology. In practice, these sensors exploit the Lorentz force in order to detect external magnetic fields through the displacement of resonant structures, which are measured with optical, capacitive, and piezoresistive sensing techniques. From these, the optical sensing presents immunity to electromagnetic interference (EMI) and reduces the read-out electronic complexity. Moreover, piezoresistive sensing requires an easy fabrication process as well as a standard packaging. A description of the operation mechanisms, advantages and drawbacks of each sensor is considered. MEMS magnetic field sensors are a potential alternative for numerous applications, including the automotive industry, military, medical, telecommunications, oceanographic, spatial, and environment science. In addition, future markets will need the development of several sensors on a single chip for measuring different parameters such as the magnetic field, pressure, temperature and acceleration. PMID:22408480

The effect of gate length on SOI-MOSFETS operation | Baedi ...

African Journals Online (AJOL)

The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate ...

One-chip Integrated Module of MEMS Shock Sensor and Sensing Amplifier LSI using Pseudo-SOC Technology

Science.gov (United States)

Iida, Atsuko; Onozuka, Yutaka; Nishigaki, Michihiko; Yamada, Hiroshi; Funaki, Hideyuki; Itaya, Kazuhiko

We have been developing the pseudo-SOC technology for one-chip module integration of heterogeneous devices that realizes high electrical performance and high density of devices embodying the advantages of both SOC technology and SIP technology. Especially, this technology is available for MEMS-LSI integration. We developed a 0.2mm-thickness one-chip module integrating a MEMS shock sensor and a sensing amplifier LSI by applying this technology. The MEMS shock sensor and the sensing amplifier LSI were connected by high-rigidity epoxy resin optimized the material constants to reduce the stress and the warpage resulting from resin shrinkage due to curing. Then the planar insulating layer and the redistributed conducting layer were formed on it for the global layer. The MEMS shock sensor was preformed to be modularized with a glass cap. Electrical contacts were achieved by bonding of Au bumps on the MEMS fixed electrodes and via holes filled with Ag paste of the glass cap. Functional performance was confirmed by obtaining signal corresponding to the reference signal of the pick-up sensor. Furthermore, stress analysis was performed using the FEM model simulation considering the resin shrinkage.

MEMS-Based Waste Vibrational Energy Harvesters

Science.gov (United States)

2013-06-01

MEMS energy- harvesting device. Although PZT is used more prevalently due to its higher piezoelectric coefficient and dielectric constant, AlN has...7 1. Lead Zirconium Titanate ( PZT ) .........................................................7 2. Aluminum...Laboratory PiezoMUMPS Piezoelectric Multi-User MEMS Processes PZT Lead Zirconate Titanate SEM Scanning Electron Microscopy SiO2 Silicon

Design and optimization of stress centralized MEMS vector hydrophone with high sensitivity at low frequency

Science.gov (United States)

Zhang, Guojun; Ding, Junwen; Xu, Wei; Liu, Yuan; Wang, Renxin; Han, Janjun; Bai, Bing; Xue, Chenyang; Liu, Jun; Zhang, Wendong

2018-05-01

A micro hydrophone based on piezoresistive effect, "MEMS vector hydrophone" was developed for acoustic detection application. To improve the sensitivity of MEMS vector hydrophone at low frequency, we reported a stress centralized MEMS vector hydrophone (SCVH) mainly used in 20-500 Hz. Stress concentration area was actualized in sensitive unit of hydrophone by silicon micromachining technology. Then piezoresistors were placed in stress concentration area for better mechanical response, thereby obtaining higher sensitivity. Static analysis was done to compare the mechanical response of three different sensitive microstructure: SCVH, conventional micro-silicon four-beam vector hydrophone (CFVH) and Lollipop-shaped vector hydrophone (LVH) respectively. And fluid-structure interaction (FSI) was used to analyze the natural frequency of SCVH for ensuring the measurable bandwidth. Eventually, the calibration experiment in standing wave field was done to test the property of SCVH and verify the accuracy of simulation. The results show that the sensitivity of SCVH has nearly increased by 17.2 dB in contrast to CFVH and 7.6 dB in contrast to LVH during 20-500 Hz.

Stability, Nonlinearity and Reliability of Electrostatically Actuated MEMS Devices

Directory of Open Access Journals (Sweden)

Di Chen

2007-05-01

Full Text Available Electrostatic micro-electro-mechanical system (MEMS is a special branch with a wide range of applications in sensing and actuating devices in MEMS. This paper provides a survey and analysis of the electrostatic force of importance in MEMS, its physical model, scaling effect, stability, nonlinearity and reliability in detail. It is necessary to understand the effects of electrostatic forces in MEMS and then many phenomena of practical importance, such as pull-in instability and the effects of effective stiffness, dielectric charging, stress gradient, temperature on the pull-in voltage, nonlinear dynamic effects and reliability due to electrostatic forces occurred in MEMS can be explained scientifically, and consequently the great potential of MEMS technology could be explored effectively and utilized optimally. A simplified parallel-plate capacitor model is proposed to investigate the resonance response, inherent nonlinearity, stiffness softened effect and coupled nonlinear effect of the typical electrostatically actuated MEMS devices. Many failure modes and mechanisms and various methods and techniques, including materials selection, reasonable design and extending the controllable travel range used to analyze and reduce the failures are discussed in the electrostatically actuated MEMS devices. Numerical simulations and discussions indicate that the effects of instability, nonlinear characteristics and reliability subjected to electrostatic forces cannot be ignored and are in need of further investigation.

Sandia Agile MEMS Prototyping, Layout Tools, Education and Services Program

Energy Technology Data Exchange (ETDEWEB)

Schriner, H.; Davies, B.; Sniegowski, J.; Rodgers, M.S.; Allen, J.; Shepard, C.

1998-05-01

Research and development in the design and manufacture of Microelectromechanical Systems (MEMS) is growing at an enormous rate. Advances in MEMS design tools and fabrication processes at Sandia National Laboratories` Microelectronics Development Laboratory (MDL) have broadened the scope of MEMS applications that can be designed and manufactured for both military and commercial use. As improvements in micromachining fabrication technologies continue to be made, MEMS designs can become more complex, thus opening the door to an even broader set of MEMS applications. In an effort to further research and development in MEMS design, fabrication, and application, Sandia National Laboratories has launched the Sandia Agile MEMS Prototyping, Layout Tools, Education and Services Program or SAMPLES program. The SAMPLES program offers potential partners interested in MEMS the opportunity to prototype an idea and produce hardware that can be used to sell a concept. The SAMPLES program provides education and training on Sandia`s design tools, analysis tools and fabrication process. New designers can participate in the SAMPLES program and design MEMS devices using Sandia`s design and analysis tools. As part of the SAMPLES program, participants` designs are fabricated using Sandia`s 4 level polycrystalline silicon surface micromachine technology fabrication process known as SUMMiT (Sandia Ultra-planar, Multi-level MEMS Technology). Furthermore, SAMPLES participants can also opt to obtain state of the art, post-fabrication services provided at Sandia such as release, packaging, reliability characterization, and failure analysis. This paper discusses the components of the SAMPLES program.

A Study on the Performance of Low Cost MEMS Sensors in Strong Motion Studies

Science.gov (United States)

Tanırcan, Gulum; Alçık, Hakan; Kaya, Yavuz; Beyen, Kemal

2017-04-01

Recent advances in sensors have helped the growth of local networks. In recent years, many Micro Electro Mechanical System (MEMS)-based accelerometers have been successfully used in seismology and earthquake engineering projects. This is basically due to the increased precision obtained in these downsized instruments. Moreover, they are cheaper alternatives to force-balance type accelerometers. In Turkey, though MEMS-based accelerometers have been used in various individual applications such as magnitude and location determination of earthquakes, structural health monitoring, earthquake early warning systems, MEMS-based strong motion networks are not currently available in other populated areas of the country. Motivation of this study comes from the fact that, if MEMS sensors are qualified to record strong motion parameters of large earthquakes, a dense network can be formed in an affordable price at highly populated areas. The goals of this study are 1) to test the performance of MEMS sensors, which are available in the inventory of the Institute through shake table tests, and 2) to setup a small scale network for observing online data transfer speed to a trusted in-house routine. In order to evaluate the suitability of sensors in strong motion related studies, MEMS sensors and a reference sensor are tested under excitations of sweeping waves as well as scaled earthquake recordings. Amplitude response and correlation coefficients versus frequencies are compared. As for earthquake recordings, comparisons are carried out in terms of strong motion(SM) parameters (PGA, PGV, AI, CAV) and elastic response of structures (Sa). Furthermore, this paper also focuses on sensitivity and selectivity for sensor performances in time-frequency domain to compare different sensing characteristics and analyzes the basic strong motion parameters that influence the design majors. Results show that the cheapest MEMS sensors under investigation are able to record the mid

Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Directory of Open Access Journals (Sweden)

Deepak Bansal

2016-01-01

Full Text Available RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

Digital reflection holography based systems development for MEMS testing

Science.gov (United States)

Singh, Vijay Raj; Liansheng, Sui; Asundi, Anand

2010-05-01

MEMS are tiny mechanical devices that are built onto semiconductor chips and are measured in micrometers and nanometers. Testing of MEMS device is an important part in carrying out their functional assessment and reliability analysis. Development of systems based on digital holography (DH) for MEMS inspection and characterization is presented in this paper. Two DH reflection systems, table-top and handheld types, are developed depending on the MEMS measurement requirements and their capabilities are presented. The methodologies for the systems are developed for 3D profile inspection and static & dynamic measurements, which is further integrated with in-house developed software that provides the measurement results in near real time. The applications of the developed systems are demonstrated for different MEMS devices for 3D profile inspection, static deformation/deflection measurements and vibration analysis. The developed systems are well suitable for the testing of MEMS and Microsystems samples, with full-field, static & dynamic inspection as well as to monitor micro-fabrication process.

MEMS Reliability: Infrastructure, Test Structures, Experiments, and Failure Modes

Energy Technology Data Exchange (ETDEWEB)

TANNER,DANELLE M.; SMITH,NORMAN F.; IRWIN,LLOYD W.; EATON,WILLIAM P.; HELGESEN,KAREN SUE; CLEMENT,J. JOSEPH; MILLER,WILLIAM M.; MILLER,SAMUEL L.; DUGGER,MICHAEL T.; WALRAVEN,JEREMY A.; PETERSON,KENNETH A.

2000-01-01

The burgeoning new technology of Micro-Electro-Mechanical Systems (MEMS) shows great promise in the weapons arena. We can now conceive of micro-gyros, micro-surety systems, and micro-navigators that are extremely small and inexpensive. Do we want to use this new technology in critical applications such as nuclear weapons? This question drove us to understand the reliability and failure mechanisms of silicon surface-micromachined MEMS. Development of a testing infrastructure was a crucial step to perform reliability experiments on MEMS devices and will be reported here. In addition, reliability test structures have been designed and characterized. Many experiments were performed to investigate failure modes and specifically those in different environments (humidity, temperature, shock, vibration, and storage). A predictive reliability model for wear of rubbing surfaces in microengines was developed. The root causes of failure for operating and non-operating MEMS are discussed. The major failure mechanism for operating MEMS was wear of the polysilicon rubbing surfaces. Reliability design rules for future MEMS devices are established.

A novel piezoresistive polymer nanocomposite MEMS accelerometer

International Nuclear Information System (INIS)

Seena, V; Hari, K; Prajakta, S; Ramgopal Rao, V; Pratap, Rudra

2017-01-01

A novel polymer MEMS (micro electro mechanical systems) accelerometer with photo-patternable polymer nanocomposite as a piezoresistor is presented in this work. Polymer MEMS Accelerometer with beam thicknesses of 3.3 µ m and embedded nanocomposite piezoresistive layer having a gauge factor of 90 were fabricated. The photosensitive nanocomposite samples were prepared and characterized for analyzing the mechanical and electrical properties and thereby ensuring proper process parameters for incorporating the piezoresistive layer into the polymer MEMS accelerometer. The microfabrication process flow and unit processes followed are extremely low cost with process temperatures below 100 °C. This also opens up a new possibility for easy integration of such polymer MEMS with CMOS (complementary metal oxide semiconductor) devices and circuits. The fabricated devices were characterized using laser Doppler vibrometer (LDV) and the devices exhibited a resonant frequency of 10.8 kHz and a response sensitivity of 280 nm g −1 at resonance. The main focus of this paper is on the SU-8/CB nanocomposite piezoresistive MEMS accelerometer technology development which covers the material and the fabrication aspects of these devices. CoventorWare FEA analysis performed using the extracted material properties from the experimental characterization which are in close agreement to performance parameters of the fabricated devices is also discussed. The simulated piezoresistive polymer MEMS devices showed an acceleration sensitivity of 126 nm g −1 and 82 ppm of Δ R / R per 1 g of acceleration. (paper)

A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate

International Nuclear Information System (INIS)

Wang Zhongjian; Cheng Xinhong; Xia Chao; Xu Dawei; Cao Duo; Song Zhaorui; Yu Yuehui; Shen Dashen

2012-01-01

A 680 V LDMOS on a thin SOI with an improved field oxide (FOX) and dual field plate was studied experimentally. The FOX structure was formed by an 'oxidation-etch-oxidation' process, which took much less time to form, and had a low protrusion profile. A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance. An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field. Using a SimBond SOI wafer with a 1.5 μm top silicon and a 3 μm buried oxide layer, CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V, and the specific on-resistance was 8.2 Ω·mm 2 . (semiconductor devices)

Stroke saturation on a MEMS deformable mirror for woofer-tweeter adaptive optics.

Science.gov (United States)

Morzinski, Katie; Macintosh, Bruce; Gavel, Donald; Dillon, Daren

2009-03-30

High-contrast imaging of extrasolar planet candidates around a main-sequence star has recently been realized from the ground using current adaptive optics (AO) systems. Advancing such observations will be a task for the Gemini Planet Imager, an upcoming "extreme" AO instrument. High-order "tweeter" and low-order "woofer" deformable mirrors (DMs) will supply a >90%-Strehl correction, a specialized coronagraph will suppress the stellar flux, and any planets can then be imaged in the "dark hole" region. Residual wavefront error scatters light into the DM-controlled dark hole, making planets difficult to image above the noise. It is crucial in this regard that the high-density tweeter, a micro-electrical mechanical systems (MEMS) DM, have sufficient stroke to deform to the shapes required by atmospheric turbulence. Laboratory experiments were conducted to determine the rate and circumstance of saturation, i.e. stroke insufficiency. A 1024-actuator 1.5-microm-stroke MEMS device was empirically tested with software Kolmogorov-turbulence screens of r(0) =10-15 cm. The MEMS when solitary suffered saturation approximately 4% of the time. Simulating a woofer DM with approximately 5-10 actuators across a 5-m primary mitigated MEMS saturation occurrence to a fraction of a percent. While no adjacent actuators were saturated at opposing positions, mid-to-high-spatial-frequency stroke did saturate more frequently than expected, implying that correlations through the influence functions are important. Analytical models underpredict the stroke requirements, so empirical studies are important.

Poly-SiGe for MEMS-above-CMOS sensors

CERN Document Server

Gonzalez Ruiz, Pilar; Witvrouw, Ann

2014-01-01

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

Beam dynamics of mixed high intensity highly charged ion Beams in the Q/A selector

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.H., E-mail: zhangxiaohu@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Yuan, Y.J.; Yin, X.J.; Qian, C.; Sun, L.T. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Du, H.; Li, Z.S.; Qiao, J.; Wang, K.D. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, H.W.; Xia, J.W. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2017-06-11

Electron cyclotron resonance (ECR) ion sources are widely used in heavy ion accelerators for their advantages in producing high quality intense beams of highly charged ions. However, it exists challenges in the design of the Q/A selection systems for mixed high intensity ion beams to reach sufficient Q/A resolution while controlling the beam emittance growth. Moreover, as the emittance of beam from ECR ion sources is coupled, the matching of phase space to post accelerator, for a wide range of ion beam species with different intensities, should be carefully studied. In this paper, the simulation and experimental results of the Q/A selection system at the LECR4 platform are shown. The formation of hollow cross section heavy ion beam at the end of the Q/A selector is revealed. A reasonable interpretation has been proposed, a modified design of the Q/A selection system has been committed for HIRFL-SSC linac injector. The features of the new design including beam simulations and experiment results are also presented.

Bimetallic nanoparticles for surface modification and lubrication of MEMS switch contacts

Energy Technology Data Exchange (ETDEWEB)

Patton, Steven T; Hu Jianjun [University of Dayton Research Institute, Dayton, OH 45469-0168 (United States); Slocik, Joseph M; Campbell, Angela; Naik, Rajesh R; Voevodin, Andrey A [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433-7750 (United States)], E-mail: steve.patton@wpafb.af.mil, E-mail: rajesh.naik@wpafb.af.mil

2008-10-08

Reliability continues to be a critical issue in microelectromechanical systems (MEMS) switches. Failure mechanisms include high contact resistance (R), high adhesion, melting/shorting, and contact erosion. Little previous work has addressed the lubrication of MEMS switches. In this study, bimetallic nanoparticles (NPs) are synthesized using a biotemplated approach and deposited on Au MEMS switch contacts as a nanoparticle-based lubricant. Bimetallic nanoparticles are comprised of a metallic core ({approx}10 nm diameter gold nanoparticle) with smaller metallic nanoparticles ({approx}2-3 nm diameter Pd nanoparticles) populating the core surface. Adhesion and resistance (R) were measured during hot switching experiments at low (10 {mu}A) and high (1 mA) current. The Au/Pd NP coated contacts led to reduced adhesion as compared to pure Au contacts with a compromise of slightly higher R. For switches held in the closed position at low current, R gradually decreased over tens of seconds due to increased van der Waals force and growth of the real area of contact with temporal effects being dominant over load effects. Contact behavior transitioned from 'Pd-like' to 'Au-like' during low current cycling experiments. Melting at high current resulted in rapid formation of large real contact area, low and stable R, and minimal effect of load on R. Durability at high current was excellent with no failure through 10{sup 6} hot switching cycles. Improvement at high current is due to controlled nanoscale surface roughness that spreads current through multiple nanocontacts, which restricts the size of melting regions and causes termination of nanowire growth (prevents shorting) during contact opening. Based on these results, bimetallic NPs show excellent potential as surface modifiers/lubricants for MEMS switch contacts.

New insights into fully-depleted SOI transistor response during total-dose irradiation

International Nuclear Information System (INIS)

Schwank, J.R.; Shaneyfelt, M.R.; Dodd, P.E.; Burns, J.A.; Keast, C.L.; Wyatt, P.W.

1999-01-01

In this paper, we present irradiation results on 2-fully depleted processes (HYSOI6, RKSOI) that show SOI (silicon on insulator) device response can be more complicated than originally suggested by others. The major difference between the 2 process versions is that the RKSOI process incorporates special techniques to minimize pre-irradiation parasitic leakage current from trench sidewalls. Transistors were irradiated at room temperature using 10 keV X-ray source. Worst-case bias configuration for total-dose testing fully-depleted SOI transistors was found to be process dependent. It appears that the worst-case bias for HYPOI6 process is the bias that causes the largest increase in sidewall leakage. The RKSOI process shows a different response during irradiation, the transition response appears to be dominated by charge trapping in the buried oxide. These results have implications for hardness assurance testing. (A.C.)

High-resolution physical map for chromosome 16q12.1-q13, the Blau syndrome locus

Directory of Open Access Journals (Sweden)

Bonavita Gina

2002-08-01

Full Text Available Abstract Background The Blau syndrome (MIM 186580, an autosomal dominant granulomatous disease, was previously mapped to chromosome 16p12-q21. However, inconsistent physical maps of the region and consequently an unknown order of microsatellite markers, hampered us from further refining the genetic locus for the Blau syndrome. To address this problem, we constructed our own high-resolution physical map for the Blau susceptibility region. Results We generated a high-resolution physical map that provides more than 90% coverage of a refined Blau susceptibility region. The map consists of four contigs of sequence tagged site-based bacterial artificial chromosomes with a total of 124 bacterial artificial chromosomes, and spans approximately 7.5 Mbp; however, three gaps still exist in this map with sizes of 425, 530 and 375 kbp, respectively, estimated from radiation hybrid mapping. Conclusions Our high-resolution map will assist genetic studies of loci in the interval from D16S3080, near D16S409, and D16S408 (16q12.1 to 16q13.

Development of a Multi-User Polyimide-MEMS Fabrication Process and its Application to MicroHotplates

KAUST Repository

Lizardo, Ernesto B.

2013-05-08

Micro-electro-mechanical systems (MEMS) became possible thanks to the silicon based technology used to fabricate integrated circuits. Originally, MEMS fabrication was limited to silicon based techniques and materials, but the expansion of MEMS applications brought the need of a wider catalog of materials, including polymers, now being used to fabricate MEMS. Polyimide is a very attractive polymer for MEMS fabrication due to its high temperature stability compared to other polymers, low coefficient of thermal expansion, low film stress and low cost. The goal of this thesis is to expand the Polyimide usage as structural material for MEMS by the development of a multi-user fabrication process for the integration of this polymer along with multiple metal layers on a silicon substrate. The process also integrates amorphous silicon as sacrificial layer to create free-standing structures. Dry etching is used to release the devices and avoid stiction phenomena. The developed process is used to fabricate platforms for micro-hotplate gas sensors. The fabrication steps for the platforms are described in detail, explaining the process specifics and capabilities. An initial testing of the micro-hotplate is presented. As the process was also used as educational tool, some designs made by students and fabricated with the Polyimide-MEMS process are also presented.

Food security among individuals experiencing homelessness and mental illness in the At Home/Chez Soi Trial.

Science.gov (United States)

O'Campo, Patricia; Hwang, Stephen W; Gozdzik, Agnes; Schuler, Andrée; Kaufman-Shriqui, Vered; Poremski, Daniel; Lazgare, Luis Ivan Palma; Distasio, Jino; Belbraouet, Slimane; Addorisio, Sindi

2017-08-01

Individuals experiencing homelessness are particularly vulnerable to food insecurity. The At Home/Chez Soi study provides a unique opportunity to first examine baseline levels of food security among homeless individuals with mental illness and second to evaluate the effect of a Housing First (HF) intervention on food security in this population. At Home/Chez Soi was a 2-year randomized controlled trial comparing the effectiveness of HF compared with usual care among homeless adults with mental illness, stratified by level of need for mental health services (high or moderate). Logistic regressions tested baseline associations between food security (US Food Security Survey Module), study site, sociodemographic variables, duration of homelessness, alcohol/substance use, physical health and service utilization. Negative binomial regression determined the impact of the HF intervention on achieving levels of high or marginal food security over an 18-month follow-up period (6 to 24 months). Community settings at five Canadian sites (Moncton, Montreal, Toronto, Winnipeg and Vancouver). Homeless adults with mental illness (n 2148). Approximately 41 % of our sample reported high or marginal food security at baseline, but this figure varied with gender, age, mental health issues and substance use problems. High need participants who received HF were more likely to achieve marginal or high food security than those receiving usual care, but only at the Toronto and Moncton sites. Our large multi-site study demonstrated low levels of food security among homeless experiencing mental illness. HF showed promise for improving food security among participants with high levels of need for mental health services, with notable site differences.

A design for a high resolution very-low-Q time-of flight diffractometer

International Nuclear Information System (INIS)

Hjelm, R. P.

1998-01-01

The design of a high resolution view low-Q time of flight diffractometer was motivated by the anticipated need to perform small-angle neutron scattering measurements at far lower momentum transfer and higher precision than currently available at either pulsed or steady state sources. In addition, it was recognized that flexibility in the configuration of the instrument and ease in which data is acquired are important. The design offers two configurations, a high intensity/very low Q geometry employing a focusing mirror and a medium to high Q-precision/low Q configuration using standard pinhole collimation geometry. The quality of the mirror optics is very important to the performance of the high intensity/very low Q configuration. We believe that the necessary technology exists to fabricate the high quality mirror optics required for the instrument

Transiente superdifusivo em caminhadas aleatórias com perfil de memória q-exponencial

OpenAIRE

Moura, Thiago Rafael da Silva

2016-01-01

Propomos nesta pesquisa um modelo de caminhada aleatória com perfil de decaimento q-exponencial. A função q-exponencial é uma generalização da função exponencial ordinária. No limite q→1, a função q-exponencial torna-se a função exponencial ordinária. Nosso modelo apresenta um comportamento difusivo Markoviano, onde se sabe que o Teorema Central do Limite proibe superdifusão neste caso. Apesar de neste problema não ser esperado o surgimento de uma transição superdifusiva no limite assintótico...

MEMS tunable grating micro-spectrometer

Science.gov (United States)

Tormen, Maurizio; Lockhart, R.; Niedermann, P.; Overstolz, T.; Hoogerwerf, A.; Mayor, J.-M.; Pierer, J.; Bosshard, C.; Ischer, R.; Voirin, G.; Stanley, R. P.

2017-11-01

The interest in MEMS based Micro-Spectrometers is increasing due to their potential in terms of flexibility as well as cost, low mass, small volume and power savings. This interest, especially in the Near-Infrared and Mid- Infrared, ranges from planetary exploration missions to astronomy, e.g. the search for extra solar planets, as well as to many other terrestrial fields of application such as, industrial quality and surface control, chemical analysis of soil and water, detection of chemical pollutants, exhausted gas analysis, food quality control, process control in pharmaceuticals, to name a few. A compact MEMS-based Spectrometer for Near- Infrared and Mid-InfraRed operation have been conceived, designed and demonstrated. The design based on tunable MEMS blazed grating, developed in the past at CSEM [1], achieves state of the art results in terms of spectral resolution, operational wavelength range, light throughput, overall dimensions, and power consumption.

Méditation et pratique de soi chez Malebranche.

Directory of Open Access Journals (Sweden)

Éric Dubreucq

2004-04-01

Full Text Available Une étude des Méditations pour se disposer à l’Humilité et à la pénitence qui les replace dans le cadre des pratiques de son époque, par exemple, chez François de Sales, celles de l’oraison, de la méditation et de la contemplation, permet d’apercevoir que l’une des thèses majeures du malebranchisme, la vision en Dieu, est un effet instauré dans le destinataire par un dispositif textuel. Celui-ci tire sa puissance prescriptive de l’a priori pratique où il s’inscrit. C’est à une opération de production de soi que l’exercice spirituel donne lieu : l’analyse des quatre premières Méditations chrétiennes et métaphysiques, en particulier, montre que c’est une organisation de la substance personnelle que provoque le travail spirituel sur soi. Celui-ci consiste à déterminer le rapport à soi comme relation d’une vision attentive à une activité illuminante, par un décentrement textuel du « je » vers le « tu ».One of the major Malebranche’s assertion, that we see truth in God, is not a mere theoretical thesis. I study first the Méditations pour se disposer à l’Humilité et à la pénitence and compare them with François de Sales’ spiritual exercitations, and show that prayer, meditation and contemplation constitute the practical frameworks of this period. The text of the Méditations is an apparatus which is fit to cause an effect in its target – the self of the reader : the vision in God. The practical a priori of the meditation provides the text with prescriptive power to transform the self. Then I study the Méditations chrétiennes et métaphysiques i-iv : we see that Malebranche set his textual apparatus so that it prescribes its receiver a form of « work-on-one’s-self ». The self is here produced by the organisation of relationship between attentive vision and lighting action, and this structure is built in the self by a movement, induced by the text, which leads the self from

Miniaturization of components and systems for space using MEMS-technology

Science.gov (United States)

Grönland, Tor-Arne; Rangsten, Pelle; Nese, Martin; Lang, Martin

2007-06-01

Development of MEMS-based (micro electro mechanical system) components and subsystems for space applications has been pursued by various research groups and organizations around the world for at least two decades. The main driver for developing MEMS-based components for space is the miniaturization that can be achieved. Miniaturization can not only save orders of magnitude in mass and volume of individual components, but it can also allow increased redundancy, and enable novel spacecraft designs and mission scenarios. However, the commercial breakthrough of MEMS has not occurred within the space business as it has within other branches such as the IT/telecom or automotive industries, or as it has in biotech or life science applications. A main explanation to this is the highly conservative attitude to new technology within the space community. This conservatism is in many senses motivated by a very low risk acceptance in the few and costly space projects that actually ends with a space flight. To overcome this threshold there is a strong need for flight opportunities where reasonable risks can be accepted. Currently there are a few flight opportunities allowing extensive use of new technology in space, but one of the exceptions is the PRISMA program. PRISMA is an international (Sweden, Germany, France, Denmark, Norway, Greece) technology demonstration program with focus on rendezvous and formation flying. It is a two satellite LEO mission with a launch scheduled for the first half of 2009. On PRISMA, a number of novel technologies e.g. RF metrology sensor for Darwin, autonomous formation flying based on GPS and vision-based sensors, ADN-based "green propulsion" will be demonstrated in space for the first time. One of the satellites will also have a miniaturized propulsion system onboard based on MEMS-technology. This novel propulsion system includes two microthruster modules, each including four thrusters with micro- to milli-Newton thrust capability. The novelty

High-Q plasmas in the TFTR tokamak

International Nuclear Information System (INIS)

Jassby, D.L.; Barnes, C.W.; Bell, M.G.; Bitter, M.; Boivin, R.; Bretz, N.L.; Budny, R.V.; Bush, C.E.; Dylla, H.F.; Efthimion, P.C.; Fredrickson, E.D.; Hawryluk, R.J.; Hill, K.W.; Hosea, J.; Hsuan, H.; Janos, A.C.; Jobes, F.C.; Johnson, D.W.; Johnson, L.C.; Kamperschroer, J.; Kieras-Phillips, C.; Kilpatrick, S.J.; LaMarche, P.H.; LeBlanc, B.; Mansfield, D.K.; Marmar, E.S.; McCune, D.C.; McGuire, K.M.; Meade, D.M.; Medley, S.S.; Mikkelsen, D.R.; Mueller, D.; Owens, D.K.; Park, H.K.; Paul, S.F.; Pitcher, S.; Ramsey, A.T.; Redi, M.H.; Sabbagh, S.A.; Scott, S.D.; Snipes, J.; Stevens, J.; Strachan, J.D.; Stratton, B.C.; Synakowski, E.J.; Taylor, G.; Terry, J.L.; Timberlake, J.R.; Towner, H.H.; Ulrickson, M.; von Goeler, S.; Wieland, R.M.; Williams, M.; Wilson, J.R.; Wong, K.; Young, K.M.; Zarnstorff, M.C.; Zweben, S.J.

1991-01-01

In the Tokamak Fusion Test Reactor (TFTR) [Plasma Phys. Controlled Fusion 26, 11 (1984)], the highest neutron source strength S n and D--D fusion power gain Q DD are realized in the neutral-beam-fueled and heated ''supershot'' regime that occurs after extensive wall conditioning to minimize recycling. For the best supershots, S n increases approximately as P 1.8 b . The highest-Q shots are characterized by high T e (up to 12 keV), T i (up to 34 keV), and stored energy (up to 4.7 MJ), highly peaked density profiles, broad T e profiles, and lower Z eff . Replacement of critical areas of the graphite limiter tiles with carbon-fiber composite tiles and improved alignment with the plasma have mitigated the ''carbon bloom.'' Wall conditioning by lithium pellet injection prior to the beam pulse reduces carbon influx and particle recycling. Empirically, Q DD increases with decreasing pre-injection carbon radiation, and increases strongly with density peakedness [n e (0)/left-angle n e right-angle] during the beam pulse. To date, the best fusion results are S n =5x10 16 n/sec, Q DD =1.85x10 -3 , and neutron yield=4.0x10 16 n/pulse, obtained at I p =1.6--1.9 MA and beam energy E b =95--103 keV, with nearly balanced co- and counter-injected beam power. Computer simulations of supershot plasmas show that typically 50%--60% of S n arises from beam--target reactions, with the remainder divided between beam--beam and thermonuclear reactions, the thermonuclear fraction increasing with P b

Evolution of a MEMS Photoacoustic Chemical Sensor

National Research Council Canada - National Science Library

Pellegrino, Paul M; Polcawich, Ronald G

2003-01-01

.... Initial MEMS work is centered on fabrication of a lead zirconate titanate (PZT) microphone subsystem to be incorporated in the full photoacoustic device. Preliminary results were very positive for the macro-photoacoustic cell, PZT membrane microphones design / fabrication and elementary monolithic MEMS photoacoustic cavity.

Staging of RF-accelerating Units in a MEMS-based Ion Accelerator

Science.gov (United States)

Persaud, A.; Seidl, P. A.; Ji, Q.; Feinberg, E.; Waldron, W. L.; Schenkel, T.; Ardanuc, S.; Vinayakumar, K. B.; Lal, A.

Multiple Electrostatic Quadrupole Array Linear Accelerators (MEQALACs) provide an opportunity to realize compact radio- frequency (RF) accelerator structures that can deliver very high beam currents. MEQALACs have been previously realized with acceleration gap distances and beam aperture sizes of the order of centimeters. Through advances in Micro-Electro-Mechanical Systems (MEMS) fabrication, MEQALACs can now be scaled down to the sub-millimeter regime and batch processed on wafer substrates. In this paper we show first results from using three RF stages in a compact MEMS-based ion accelerator. The results presented show proof-of-concept with accelerator structures formed from printed circuit boards using a 3 × 3 beamlet arrangement and noble gas ions at 10 keV. We present a simple model to describe the measured results. We also discuss some of the scaling behaviour of a compact MEQALAC. The MEMS-based approach enables a low-cost, highly versatile accelerator covering a wide range of currents (10 μA to 100 mA) and beam energies (100 keV to several MeV). Applications include ion-beam analysis, mass spectrometry, materials processing, and at very high beam powers, plasma heating.

10^3 Segment MEMS Deformable-Mirror Process Development, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Iris AO will extend its proven segmented MEMS deformable mirror architecture to large array sizes required for high-contrast astrophysical imagers. Current...

Analysis of silicon on insulator (SOI) optical microring add-drop filter based on waveguide intersections

Science.gov (United States)

Kaźmierczak, Andrzej; Bogaerts, Wim; Van Thourhout, Dries; Drouard, Emmanuel; Rojo-Romeo, Pedro; Giannone, Domenico; Gaffiot, Frederic

2008-04-01

We present a compact passive optical add-drop filter which incorporates two microring resonators and a waveguide intersection in silicon-on-insulator (SOI) technology. Such a filter is a key element for designing simple layouts of highly integrated complex optical networks-on-chip. The filter occupies an area smaller than 10μm×10μm and exhibits relatively high quality factors (up to 4000) and efficient signal dropping capabilities. In the present work, the influence of filter parameters such as the microring-resonators radii and the coupling section shape are analyzed theoretically and experimentally

Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization

International Nuclear Information System (INIS)

Raine, M.; Gaillardin, M.; Sauvestre, J.E.; Flament, O.; Bournel, A.; Aubry-Fortuna, V.

2010-01-01

The response of SOI transistors under heavy ion irradiation is analyzed using Geant4 and Synopsys Sentaurus device simulations. The ion mass and energy have a significant impact on the radial ionization profile of the ion deposited charge. For example, for an identical LET, the higher the ion energy per nucleon, the wider the radial ionization track. For a 70-nm SOI technology, the track radius of high energy ions (≥ 10 MeV/a) is larger than the transistor sensitive volume; part of the ion charge recombines in the highly doped source or drain regions and does not participate to the transistor electric response. At lower energy (≤ 10 MeV/a), as often used for ground testing, the track radius is smaller than the transistor sensitive volume, and the entire charge is used for the transistor response. The collected charge is then higher, corresponding to a worst-case response of the transistor. Implications for the hardness assurance of highly-scaled generations are discussed. (authors)

Quasi-Optical Network Analyzers and High-Reliability RF MEMS Switched Capacitors

Science.gov (United States)

Grichener, Alexander

The thesis first presents a 2-port quasi-optical scalar network analyzer consisting of a transmitter and receiver both built in planar technology. The network analyzer is based on a Schottky-diode mixer integrated inside a planar antenna and fed differentially by a CPW transmission line. The antenna is placed on an extended hemispherical high-resistivity silicon substrate lens. The LO signal is swept from 3-5 GHz and high-order harmonic mixing in both up- and down- conversion mode is used to realize the 15-50 GHz RF bandwidth. The network analyzer resulted in a dynamic range of greater than 40 dB and was successfully used to measure a frequency selective surface with a second-order bandpass response. Furthermore, the system was built with circuits and components for easy scaling to millimeter-wave frequencies which is the primary motivation for this work. The application areas for a millimeter and submillimeter-wave network analyzer include material characterization and art diagnostics. The second project presents several RF MEMS switched capacitors designed for high-reliability operation and suitable for tunable filters and reconfigurable networks. The first switched-capacitor resulted in a digital capacitance ratio of 5 and an analog capacitance ratio of 5-9. The analog tuning of the down-state capacitance is enhanced by a positive vertical stress gradient in the the beam, making it ideal for applications that require precision tuning. A thick electroplated beam resulted in Q greater than 100 at C to X-band frequencies, and power handling of 0.6-1.1 W. The design also minimized charging in the dielectric, resulting in excellent reliability performance even under hot-switched and high power (1 W) conditions. The second switched-capacitor was designed without any dielectric to minimize charging. The device was hot-switched at 1 W of RF power for greater than 11 billion cycles with virtually no change in the C-V curve. The final project presents a 7-channel

Multiplex enrichment quantitative PCR (ME-qPCR): a high-throughput, highly sensitive detection method for GMO identification.

Science.gov (United States)

Fu, Wei; Zhu, Pengyu; Wei, Shuang; Zhixin, Du; Wang, Chenguang; Wu, Xiyang; Li, Feiwu; Zhu, Shuifang

2017-04-01

Among all of the high-throughput detection methods, PCR-based methodologies are regarded as the most cost-efficient and feasible methodologies compared with the next-generation sequencing or ChIP-based methods. However, the PCR-based methods can only achieve multiplex detection up to 15-plex due to limitations imposed by the multiplex primer interactions. The detection throughput cannot meet the demands of high-throughput detection, such as SNP or gene expression analysis. Therefore, in our study, we have developed a new high-throughput PCR-based detection method, multiplex enrichment quantitative PCR (ME-qPCR), which is a combination of qPCR and nested PCR. The GMO content detection results in our study showed that ME-qPCR could achieve high-throughput detection up to 26-plex. Compared to the original qPCR, the Ct values of ME-qPCR were lower for the same group, which showed that ME-qPCR sensitivity is higher than the original qPCR. The absolute limit of detection for ME-qPCR could achieve levels as low as a single copy of the plant genome. Moreover, the specificity results showed that no cross-amplification occurred for irrelevant GMO events. After evaluation of all of the parameters, a practical evaluation was performed with different foods. The more stable amplification results, compared to qPCR, showed that ME-qPCR was suitable for GMO detection in foods. In conclusion, ME-qPCR achieved sensitive, high-throughput GMO detection in complex substrates, such as crops or food samples. In the future, ME-qPCR-based GMO content identification may positively impact SNP analysis or multiplex gene expression of food or agricultural samples. Graphical abstract For the first-step amplification, four primers (A, B, C, and D) have been added into the reaction volume. In this manner, four kinds of amplicons have been generated. All of these four amplicons could be regarded as the target of second-step PCR. For the second-step amplification, three parallels have been taken for

Heterogeneous MEMS device assembly and integration

Science.gov (United States)

Topart, Patrice; Picard, Francis; Ilias, Samir; Alain, Christine; Chevalier, Claude; Fisette, Bruno; Paultre, Jacques E.; Généreux, Francis; Legros, Mathieu; Lepage, Jean-François; Laverdière, Christian; Ngo Phong, Linh; Caron, Jean-Sol; Desroches, Yan

2014-03-01

In recent years, smart phone applications have both raised the pressure for cost and time to market reduction, and the need for high performance MEMS devices. This trend has led the MEMS community to develop multi-die packaging of different functionalities or multi-technology (i.e. wafer) approaches to fabricate and assemble devices respectively. This paper reports on the fabrication, assembly and packaging at INO of various MEMS devices using heterogeneous assembly at chip and package-level. First, the performance of a giant (e.g. about 3 mm in diameter), electrostatically actuated beam steering mirror is presented. It can be rotated about two perpendicular axes to steer an optical beam within an angular cone of up to 60° in vector scan mode with an angular resolution of 1 mrad and a response time of 300 ms. To achieve such angular performance relative to mirror size, the microassembly was performed from sub-components fabricated from 4 different wafers. To combine infrared detection with inertial sensing, an electroplated proof mass was flip-chipped onto a 256×1 pixel uncooled bolometric FPA and released using laser ablation. In addition to the microassembly technology, performance results of packaged devices are presented. Finally, to simulate a 3072×3 pixel uncooled detector for cloud and fire imaging in mid and long-wave IR, the staggered assembly of six 512×3 pixel FPAs with a less than 50 micron pixel co-registration is reported.

Wavelength tunable MEMS VCSELs for OCT imaging

DEFF Research Database (Denmark)

Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa

2018-01-01

MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III...

Construction and Initial Validation of the Multiracial Experiences Measure (MEM)

Science.gov (United States)

Yoo, Hyung Chol; Jackson, Kelly; Guevarra, Rudy P.; Miller, Matthew J.; Harrington, Blair

2015-01-01

This article describes the development and validation of the Multiracial Experiences Measure (MEM): a new measure that assesses uniquely racialized risks and resiliencies experienced by individuals of mixed racial heritage. Across two studies, there was evidence for the validation of the 25-item MEM with 5 subscales including Shifting Expressions, Perceived Racial Ambiguity, Creating Third Space, Multicultural Engagement, and Multiracial Discrimination. The 5-subscale structure of the MEM was supported by a combination of exploratory and confirmatory factor analyses. Evidence of criterion-related validity was partially supported with MEM subscales correlating with measures of racial diversity in one’s social network, color-blind racial attitude, psychological distress, and identity conflict. Evidence of discriminant validity was supported with MEM subscales not correlating with impression management. Implications for future research and suggestions for utilization of the MEM in clinical practice with multiracial adults are discussed. PMID:26460977

Engineering stress in thin films for the field of bistable MEMS

International Nuclear Information System (INIS)

Ratnayake, Dilan; Gowrishetty, Usha R; McNamara, Shamus P; Walsh, Kevin M; Martin, Michael D; Porter, Daniel A; Berfield, Thomas A

2015-01-01

While stress-free and tensile films are well-suited for released in-plane MEMS designs, compressive films are needed for released out-of-plane MEMS structures such as buckled beams and diaphragms. This study presents a characterization of stress on a variety of sputtered and plasma-enhanced chemical vapour deposition (PECVD)-deposited films, including titanium tungsten, invar, silicon nitride and amorphous silicon, appropriate for the field of bistable MEMS. Techniques and strategies are presented (including varying substrate bias, pressure, temperature, and frequency multiplexing) for tuning internal stress across the spectrum from highly compressive (−2300 MPa) to highly tensile (1500 MPa). Conditions for obtaining stress-free films are also presented in this work. Under certain conditions during the PECVD deposition of amorphous silicon, interesting ‘micro-bubbles’ formed within the deposited films. Strategies to mitigate their formation are presented, resulting in a dramatic improvement in surface roughness quality from 667 nm root mean square (RMS) to 16 nm RMS. All final deposited films successfully passed the traditional ‘tape test’ for adhesion. (paper)

Analysis and wafer-level design of a high-order silicon vibration isolator for resonating MEMS devices

International Nuclear Information System (INIS)

Yoon, Sang Won; Lee, Sangwoo; Najafi, Khalil; Perkins, Noel C

2011-01-01

This paper presents the analysis and preliminary design, fabrication, and measurement for mechanical vibration-isolation platforms especially designed for resonating MEMS devices including gyroscopes. Important parameters for designing isolation platforms are specified and the first platform (in designs with cascaded multiple platforms) is crucial for improving vibration-isolation performance and minimizing side-effects on integrated gyroscopes. This isolation platform, made from a thick silicon wafer substrate for an environment-resistant MEMS package, incorporates the functionalities of a previous design including vacuum packaging and thermal resistance with no additional resources. This platform consists of platform mass, isolation beams, vertical feedthroughs, and bonding pads. Two isolation platform designs follow from two isolation beam designs: lateral clamped–clamped beams and vertical torsion beams. The beams function simultaneously as mechanical springs and electrical interconnects. The vibration-isolation platform can yield a multi-dimensional, high-order mechanical low pass filter. The isolation platform possesses eight interconnects within a 12.2 × 12.2 mm 2 footprint. The contact resistance ranges from 4–11 Ω depending on the beam design. Vibration measurements using a laser-Doppler vibrometer demonstrate that the lateral vibration-isolation platform suppresses external vibration having frequencies exceeding 2.1 kHz.

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

International Nuclear Information System (INIS)

Zhang Jun; Guo Yu-Feng; Xu Yue; Lin Hong; Yang Hui; Hong Yang; Yao Jia-Fei

2015-01-01

A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. (paper)

Photonic bandpass filter characteristics of multimode SOI waveguides integrated with submicron gratings.

Science.gov (United States)

Sah, Parimal; Das, Bijoy Krishna

2018-03-20

It has been shown that a fundamental mode adiabatically launched into a multimode SOI waveguide with submicron grating offers well-defined flat-top bandpass filter characteristics in transmission. The transmitted spectral bandwidth is controlled by adjusting both waveguide and grating design parameters. The bandwidth is further narrowed down by cascading two gratings with detuned parameters. A semi-analytical model is used to analyze the filter characteristics (1500  nm≤λ≤1650  nm) of the device operating in transverse-electric polarization. The proposed devices were fabricated with an optimized set of design parameters in a SOI substrate with a device layer thickness of 250 nm. The pass bandwidth of waveguide devices integrated with single-stage gratings are measured to be ∼24  nm, whereas the device with two cascaded gratings with slightly detuned periods (ΔΛ=2  nm) exhibits a pass bandwidth down to ∼10  nm.

A 2D simulation study and characterization of a novel vertical SOI MOSFET with a smart source/body tie

International Nuclear Information System (INIS)

Lin, Jyi-Tsong; Lee, Tai-Yi; Lin, Kao-Cheng

2008-01-01

A novel vertical silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with a smart source/body contact, SSBVMOS, is presented here for the first time. 2D simulations reveal that the SSBVMOS reduces self-heating effects, with the lattice temperature reduced by 14% and the hole temperature reduced by 25%. The SSBVMOS also eliminates the floating body effect, something that other SOI vertical MOSFETs are unable to accomplish, regardless of the thickness of the thin film. The SSBVMOS is further found to have a better drain-induced barrier lowering and subthreshold swing than either a conventional vertical MOSFET or an SOI vertical MOSFET. Moreover, these results are achieved using typical pillar heights and buried oxide thicknesses. Should future technological advances allow for lower pillars or thinner buried oxides, the SSBVMOS performance would further increase

Improving Planetary Rover Attitude Estimation via MEMS Sensor Characterization

Science.gov (United States)

Hidalgo, Javier; Poulakis, Pantelis; Köhler, Johan; Del-Cerro, Jaime; Barrientos, Antonio

2012-01-01

Micro Electro-Mechanical Systems (MEMS) are currently being considered in the space sector due to its suitable level of performance for spacecrafts in terms of mechanical robustness with low power consumption, small mass and size, and significant advantage in system design and accommodation. However, there is still a lack of understanding regarding the performance and testing of these new sensors, especially in planetary robotics. This paper presents what is missing in the field: a complete methodology regarding the characterization and modeling of MEMS sensors with direct application. A reproducible and complete approach including all the intermediate steps, tools and laboratory equipment is described. The process of sensor error characterization and modeling through to the final integration in the sensor fusion scheme is explained with detail. Although the concept of fusion is relatively easy to comprehend, carefully characterizing and filtering sensor information is not an easy task and is essential for good performance. The strength of the approach has been verified with representative tests of novel high-grade MEMS inertia sensors and exemplary planetary rover platforms with promising results. PMID:22438761

Optical fibre angle sensor used in MEMS

International Nuclear Information System (INIS)

Golebiowski, J; Milcarz, Sz; Rybak, M

2014-01-01

There is a need for displacement and angle measurements in many movable MEMS structures. The use of fibre optical sensors helps to measure micrometre displacements and small rotation angles. Advantages of this type of transducers are their simple design, high precision of processing, low costs and ability of a non-contact measurement. The study shows an analysis of a fibre-optic intensity sensor used for MEMS movable structure rotation angle measurement. An intensity of the light in the photodetector is basically dependent on a distance between a reflecting surface and a head surface of the fibre transmitting arm, and the deflection angle. Experimental tests were made for PMMA 980/1000 plastic fibres, Θ NA =33°. The study shows both analytical and practical results. It proves that calculated and experimental characteristics for the analysed transducers are similar.

K70Q adds high-level tenofovir resistance to "Q151M complex" HIV reverse transcriptase through the enhanced discrimination mechanism.

Directory of Open Access Journals (Sweden)

Atsuko Hachiya

2011-01-01

Full Text Available HIV-1 carrying the "Q151M complex" reverse transcriptase (RT mutations (A62V/V75I/F77L/F116Y/Q151M, or Q151Mc is resistant to many FDA-approved nucleoside RT inhibitors (NRTIs, but has been considered susceptible to tenofovir disoproxil fumarate (TFV-DF or TDF. We have isolated from a TFV-DF-treated HIV patient a Q151Mc-containing clinical isolate with high phenotypic resistance to TFV-DF. Analysis of the genotypic and phenotypic testing over the course of this patient's therapy lead us to hypothesize that TFV-DF resistance emerged upon appearance of the previously unreported K70Q mutation in the Q151Mc background. Virological analysis showed that HIV with only K70Q was not significantly resistant to TFV-DF. However, addition of K70Q to the Q151Mc background significantly enhanced resistance to several approved NRTIs, and also resulted in high-level (10-fold resistance to TFV-DF. Biochemical experiments established that the increased resistance to tenofovir is not the result of enhanced excision, as K70Q/Q151Mc RT exhibited diminished, rather than enhanced ATP-based primer unblocking activity. Pre-steady state kinetic analysis of the recombinant enzymes demonstrated that addition of the K70Q mutation selectively decreases the binding of tenofovir-diphosphate (TFV-DP, resulting in reduced incorporation of TFV into the nascent DNA chain. Molecular dynamics simulations suggest that changes in the hydrogen bonding pattern in the polymerase active site of K70Q/Q151Mc RT may contribute to the observed changes in binding and incorporation of TFV-DP. The novel pattern of TFV-resistance may help adjust therapeutic strategies for NRTI-experienced patients with multi-drug resistant (MDR mutations.

Engineered SOI slot waveguide ring resonator V-shape resonance combs for refraction index sensing up to 1300nm/RIU (Conference Presentation)

Science.gov (United States)

Zhang, Weiwei; Serna, Samuel; Le Roux, Xavier; Vivien, Laurent; Cassan, Eric

2016-05-01

Bio-detection based on CMOS technology boosts the miniaturization of detection systems and the success on highly efficient, robust, accurate, and low coast Lab-on-Chip detection schemes. Such on chip detection technologies have covered healthy related harmful gases, bio-chemical analytes, genetic micro RNA, etc. Their monitoring accuracy is mainly qualified in terms of sensitivity and limit of the detection (LOD) of the detection system. In this context, recently developed silicon on insulator (SOI) optical devices have displayed highly performant detection abilities that LOD could go beyond 10-8RIU and sensitivity could exceeds 103nm/RIU. The SOI integrated optical sensing devices include strip/slotted waveguide consisting in structures like Mach-Zehnder interferometers (MZI), ring resonators (RR), nano cavities, etc. Typically, hollow core RR and nano-cavities could exhibit higher sensitivity due to their optical mode confinement properties with a partial localization of the electric field in low index sensing regions than devices based on evanescent field tails outside of the optical cores. Furthermore, they also provide larger sensing areas for surface functionalization to reach higher sensitivities and lower LODs. The state of art of hollow core devices, either based on Bragg gratings formed from a slot waveguide cavity or photonic crystal slot cavities, show sensitivities (S) up to 400nm/RIU and Figure of Merit (FOM) around 3,000 in water environment, FOM being defined as the inverse of LOD and precisely as FOM=SQ/λ, with λ the resonance wavelength and Q the quality factor of the considered resonator. Such high achieved FOMs in nano cavities are mainly due to their large Q factors around 15,000. While for mostly used RR, which do not require particular design strategies, relatively low Q factors around 1800 in water are met and moderate sensitivities about 300nm/RIU are found. In this work, we present here a novel slot ring resonator design to make

Recent Progress in Silicon Mems Oscillators

Science.gov (United States)

2008-12-01

MEMS oscillator. As shown, a MEMS resonator is connected to an IC. The reference oscillator, which is basically a transimpedance amplifier ...small size), and (3) DC bias voltage required to operate the resonators. As a result, instead of Colpitts or Pierce architecture, a transimpedence ... amplifier is typically used for sustain the oscillation. The frequency of the resonators is determined by both material properties and geometry of

Movable MEMS Devices on Flexible Silicon

KAUST Repository

Ahmed, Sally

2013-05-05

Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS actuators and sensors can play critical role to extend the application areas of flexible electronics, fabricating movable MEMS devices on flexible substrates is highly challenging. Therefore, this thesis reports a process for fabricating free standing and movable MEMS devices on flexible silicon substrates; MEMS flexure thermal actuators have been fabricated to illustrate the viability of the process. Flexure thermal actuators consist of two arms: a thin hot arm and a wide cold arm separated by a small air gap; the arms are anchored to the substrate from one end and connected to each other from the other end. The actuator design has been modified by adding etch holes in the anchors to suit the process of releasing a thin layer of silicon from the bulk silicon substrate. Selecting materials that are compatible with the release process was challenging. Moreover, difficulties were faced in the fabrication process development; for example, the structural layer of the devices was partially etched during silicon release although it was protected by aluminum oxide which is not attacked by the releasing gas . Furthermore, the thin arm of the thermal actuator was thinned during the fabrication process but optimizing the patterning and etching steps of the structural layer successfully solved this problem. Simulation was carried out to compare the performance of the original and the modified designs for the thermal actuators and to study stress and temperature distribution across a device. A fabricated thermal actuator with a 250 μm long hot arm and a 225 μm long cold arm separated by a 3 μm gap produced a deflection of 3 μm before silicon release, however, the fabrication process must be optimized to obtain fully functioning

MEMS mass-spring-damper systems using an out-of-plane suspension scheme

KAUST Repository

Abdel Aziz, Ahmed Kamal Said; Sharaf, Abdel Hameed; Serry, Mohamed Yousef; Sedky, Sherif Salah

2014-01-01

MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) using an out-of-plane (or vertical) suspension scheme, wherein the suspensions are normal to the proof mass, are disclosed. Such out-of-plane suspension scheme helps such MEMS mass-spring-damper systems achieve inertial grade performance. Methods of fabricating out-of-plane suspensions in MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) are also disclosed.

MEMS mass-spring-damper systems using an out-of-plane suspension scheme

KAUST Repository

Abdel Aziz, Ahmed Kamal Said

2014-02-04

MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) using an out-of-plane (or vertical) suspension scheme, wherein the suspensions are normal to the proof mass, are disclosed. Such out-of-plane suspension scheme helps such MEMS mass-spring-damper systems achieve inertial grade performance. Methods of fabricating out-of-plane suspensions in MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) are also disclosed.

Microfibrous metallic cloth for acoustic isolation of a MEMS gyroscope

Science.gov (United States)

Dean, Robert; Burch, Nesha; Black, Meagan; Beal, Aubrey; Flowers, George

2011-04-01

The response of a MEMS device that is exposed to a harsh environment may range from an increased noise floor to a completely erroneous output to temporary or even permanent device failure. One such harsh environment is high power acoustic energy possessing high frequency components. This type of environment sometimes occurs in small aerospace vehicles. In this type of operating environment, high frequency acoustic energy can be transferred to a MEMS gyroscope die through the device packaging. If the acoustic noise possesses a sufficiently strong component at the resonant frequency of the gyroscope, it will overexcite the motion of the proof mass, resulting in the deleterious effect of corrupted angular rate measurement. Therefore if the device or system packaging can be improved to sufficiently isolate the gyroscope die from environmental acoustic energy, the sensor may find new applications in this type of harsh environment. This research effort explored the use of microfibrous metallic cloth for isolating the gyroscope die from environmental acoustic excitation. Microfibrous cloth is a composite of fused, intermingled metal fibers and has a variety of typical uses involving chemical processing applications and filtering. Specifically, this research consisted of experimental evaluations of multiple layers of packed microfibrous cloth composed of sintered nickel material. The packed cloth was used to provide acoustic isolation for a test MEMS gyroscope, the Analog Devices ADXRS300. The results of this investigation revealed that the intermingling of the various fibers of the metallic cloth provided a significant contact area between the fiber strands and voids, which enhanced the acoustic damping of the material. As a result, the nickel cloth was discovered to be an effective acoustic isolation material for this particular MEMS gyroscope.

Thermal Loss of High-Q Antennas in Time Domain vs. Frequency Domain Solver

DEFF Research Database (Denmark)

Bahramzy, Pevand; Pedersen, Gert Frølund

2014-01-01

High-Q structures pose great challenges to their loss simulations in Time Domain Solvers (TDS). Therefore, in this work the thermal loss of high-Q antennas is calculated both in TDS and Frequency Domain Solver (FDS), which are then compared with each other and with the actual measurements....... The thermal loss calculation in FDS is shown to be more accurate for high-Q antennas....

RF MEMS

Indian Academy of Sciences (India)

At the bare die level the insertion loss, return loss and the isolation ... ing and packaging of a silicon on glass based RF MEMS switch fabricated using DRIE. ..... follows the power law based on the asperity deformation model given by Pattona & ... Surface mount style RF packages (SMX series 580465) from Startedge Corp.

Pre-stressed piezoelectric bimorph micro-actuators based on machined 40 µm PZT thick films: batch scale fabrication and integration with MEMS

International Nuclear Information System (INIS)

Wilson, S A; Jourdain, R P; Owens, S

2010-01-01

The projected force–displacement capability of piezoelectric ceramic films in the 20–50 µm thickness range suggests that they are well suited to many micro-fluidic and micro-pneumatic applications. Furthermore when they are configured as bending actuators and operated at ∼ 1 V µm −1 they do not necessarily conform to the high-voltage, very low-displacement piezoelectric stereotype. Even so they are rarely found today in commercial micro-electromechanical devices, such as micro-pumps and micro-valves, and the main barriers to making them much more widely available would appear to be processing incompatibilities rather than commercial desirability. In particular, the issues associated with integration of these devices into MEMS at the production level are highly significant and they have perhaps received less attention in the mainstream than they deserve. This paper describes a fabrication route based on ultra-precision ceramic machining and full-wafer bonding for cost-effective batch scale production of thick film PZT bimorph micro-actuators and their integration with MEMS. The resulting actuators are pre-stressed (ceramic in compression) which gives them added performance, they are true bimorphs with bi-directional capability and they exhibit full bulk piezoelectric ceramic properties. The devices are designed to integrate with ancillary systems components using transfer-bonding techniques. The work forms part of the European Framework 6 Project 'Q2M—Quality to Micro'

A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

Science.gov (United States)

Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

2008-01-01

A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

FEM for modelling 193 nm excimer laser treatment of SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub x} heterostructures on SOI substrates

Energy Technology Data Exchange (ETDEWEB)

Conde, J.C.; Chiussi, S.; Gontad, F.; Gonzalez, P. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas, Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain)

2011-03-15

Research on epitaxial crystalline silicon (c-Si) and silicon-germanium (Si{sub 1-x}Ge{sub x}) alloys growth and annealing for microelectronic purposes, such as Micro- or Nano-Electro-Mechanical Systems (MEMS or NEMS) and Silicon-On-Nothing (SON) devices is continuously in progress. Laser assisted annealing techniques using commercial ArF Excimer Laser sources are based on ultra-rapid heating and cooling cycles induced by the 193 nm pulses of 20 ns, which are absorbed in the near surface region of the heterostructures. During and after the absorption of these laser pulses, complex physical processes appear that strongly depend on sample structure and applied laser pulse energy densities. The control of the experimental parameters is therefore a key task for obtaining high quality alloys. The Finite ElementsMethod (FEM) is a powerful tool for the optimization of such treatments, because it provides the spatial and temporal temperature fields that are produced by the laser pulses. In this work, we have used a FEM commercial software, to predict the temperatures gradients induced by ArF excimer laser over a wide energy densities range, 0.1<{phi}<0.4 J/cm{sup 2}, on different SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub (x)} thin films deposited on SOI substrate. These numerical results allow us to predict the threshold energies needed to reach the melting point (MP) of the Si and SiGe alloy without oxidation of the thin films system. Therefore, it is possible to optimize the conditions to achieve high quality epitaxy films. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Two-body form factors at high Q2

International Nuclear Information System (INIS)

Gross, F.; Keister, B.D.

1983-02-01

The charge form factor of a scalar deuteron at high momentum transfer is examined in a model employing scalar nucleons and mesons. With an eye toward establishing consistency criteria for more realistic calculations, several aspects of the model are examined in detail: the role of nucleon and meson singularities in the one-loop impulse diagram, the role of positive-and negative-energy nucleons, and the relationship to time-ordered perturbation theory. It is found that at large Q 2 (1) the form factor is dominated by a term in which the spectator nucleon is on the mass shell, and (2) the meson singularity structure of the d-n-p vertex function is unimportant in determining the overall high-Q 2 behaviour of the form factor

Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process

Directory of Open Access Journals (Sweden)

Avi Karsenty

2015-01-01

Full Text Available Nanoscale Gate-Recessed Channel (GRC Fully Depleted- (FD- SOI MOSFET device with a silicon channel thickness (tSi as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K for I-V characterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature.

Structural Make-up, Biopolymer Conformation, and Biodegradation Characteristics of Newly Developed Super Genotype of Oats (CDC SO-I vs. Conventional Varieties): Novel Approach

International Nuclear Information System (INIS)

Damiran, D.; Yu, P.

2010-01-01

Recently, a new 'super' genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it was observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE L3x , 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.

Nonlinear Adaptive Filter for MEMS Gyro Error Cancellation

Data.gov (United States)

National Aeronautics and Space Administration — Thermal biases are the dominate error in low-cost low-power small MEMS gyros. CubeSats often can't afford the power/mass to put a heater on their MEMS gyros and...

Design and Fabrication of a Reconfigurable MEMS-Based Antenna

KAUST Repository

Martinez, Miguel Angel Galicia

2011-06-22

to the high gain obtained in a lossy silicon substrate and the compatibility of the custom MEMS process with the state of the art standard CMOS process, it is believed that the design of this antenna can lead to efficient and low cost reconfigurable millimeter-wave System-on-Chip (SoC) solution.

Waveguide-Integrated MEMS Concepts for Tunable Millimeter-Wave Systems

OpenAIRE

Baghchehsaraei, Zargham

2014-01-01

This thesis presents two families of novel waveguide-integrated components based on millimeter-wave microelectromechanical systems (MEMS) for reconfigurable systems. The first group comprises V-band (50–75 GHz) and W-band (75–110 GHz) waveguide switches and switchable irises, and their application as switchable cavity resonators, and tunable bandpass filters implemented by integration of novel MEMS-reconfigurable surfaces into a rectangular waveguide. The second category comprises MEMS-based ...

Hollow MEMS

DEFF Research Database (Denmark)

Larsen, Peter Emil

Miniaturization of electro mechanical sensor systems to the micro range and beyond has shown impressive sensitivities measuring sample properties like mass, viscosity, acceleration, pressure and force just to name a few applications. In order to enable these kinds of measurements on liquid samples...... a hollow MEMS sensor has been designed, fabricated and tested. Combined density, viscosity, buoyant mass spectrometry and IR absorption spectroscopy are possible on liquid samples and micron sized suspended particles (e.g. single cells). Measurements are based on changes in the resonant behavior...... of these sensors. Optimization of the microfabrication process has led to a process yield of almost 100% .This is achieved despite the fact, that the process still offers a high degree of flexibility. By simple modifications the Sensor shape can be optimized for different size ranges and sensitivities...

A method for manufacturing a hollow mems structure

DEFF Research Database (Denmark)

2017-01-01

The present invention relates to a method for manufacturing an at least partly hollow MEMS structure. In a first step one or more through-going openings is/are provided in core material. The one or more through-going openings is/are then covered by an etch-stop layer. After this step, a bottom...... further comprises the step of creating bottom and top conductors in the respective bottom and top layers. Finally, excess core material is removed in order to create the at least partly hollow MEMS structure which may include a MEMS inductor....

MEMS (Micro-Electro-Mechanical Systems) for Automotive and Consumer Electronics

Science.gov (United States)

Marek, Jiri; Gómez, Udo-Martin

MEMS sensors gained over the last two decades an impressive width of applications: (a) ESP: A car is skidding and stabilizes itself without driver intervention (b) Free-fall detection: A laptop falls to the floor and protects the hard drive by parking the read/write drive head automatically before impact. (c) Airbag: An airbag fires before the driver/occupant involved in an impending automotive crash impacts the steering wheel, thereby significantly reducing physical injury risk. MEMS sensors are sensing the environmental conditions and are giving input to electronic control systems. These crucial MEMS sensors are making system reactions to human needs more intelligent, precise, and at much faster reaction rates than humanly possible. Important prerequisites for the success of sensors are their size, functionality, power consumption, and costs. This technical progress in sensor development is realized by micro-machining. The development of these processes was the breakthrough to industrial mass-production for micro-electro-mechanical systems (MEMS). Besides leading-edge micromechanical processes, innovative and robust ASIC designs, thorough simulations of the electrical and mechanical behaviour, a deep understanding of the interactions (mainly over temperature and lifetime) of the package and the mechanical structures are needed. This was achieved over the last 20 years by intense and successful development activities combined with the experience of volume production of billions of sensors. This chapter gives an overview of current MEMS technology, its applications and the market share. The MEMS processes are described, and the challenges of MEMS, compared to standard IC fabrication, are discussed. The evolution of MEMS requirements is presented, and a short survey of MEMS applications is shown. Concepts of newest inertial sensors for ESP-systems are given with an emphasis on the design concepts of the sensing element and the evaluation circuit for achieving

77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

KAUST Repository

Sallam, M. O.

2011-07-01

Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of U-turn that causes 180 phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 and excited with 90 phase shift. Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency. © 2011 IEEE.

Giant piezoelectricity on Si for hyperactive MEMS.

Science.gov (United States)

Baek, S H; Park, J; Kim, D M; Aksyuk, V A; Das, R R; Bu, S D; Felker, D A; Lettieri, J; Vaithyanathan, V; Bharadwaja, S S N; Bassiri-Gharb, N; Chen, Y B; Sun, H P; Folkman, C M; Jang, H W; Kreft, D J; Streiffer, S K; Ramesh, R; Pan, X Q; Trolier-McKinstry, S; Schlom, D G; Rzchowski, M S; Blick, R H; Eom, C B

2011-11-18

Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO(3) template layer with superior piezoelectric coefficients (e(31,f) = -27 ± 3 coulombs per square meter) and figures of merit for piezoelectric energy-harvesting systems. We have incorporated these heterostructures into microcantilevers that are actuated with extremely low drive voltage due to thin-film piezoelectric properties that rival bulk PMN-PT single crystals. These epitaxial heterostructures exhibit very large electromechanical coupling for ultrasound medical imaging, microfluidic control, mechanical sensing, and energy harvesting.

Modularly Integrated MEMS Technology

National Research Council Canada - National Science Library

Eyoum, Marie-Angie N

2006-01-01

Process design, development and integration to fabricate reliable MEMS devices on top of VLSI-CMOS electronics without damaging the underlying circuitry have been investigated throughout this dissertation...

Op-amp gyrator simulates high Q inductor

Science.gov (United States)

Sutherland, W. C.

1977-01-01

Gyrator circuit consisting of dual operational amplifier and four resistors inverts impedance of capacitor to simulate inductor. Synthetic inductor has high Q factor, good stability, wide bandwidth, and easily determined value of inductance that is independent of frequency. It readily lends itself to integrated-circuit applications, including filter networks.

Improving breakdown voltage performance of SOI power device with folded drift region

Science.gov (United States)

Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

2016-07-01

A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

BioMEMS –Advancing the Frontiers of Medicine

Directory of Open Access Journals (Sweden)

Dentcho V. Ivanov

2008-09-01

Full Text Available Biological and medical application of micro-electro-mechanical-systems (MEMS is currently seen as an area of high potential impact. Integration of biology and microtechnology has resulted in the development of a number of platforms for improving biomedical and pharmaceutical technologies. This review provides a general overview of the applications and the opportunities presented by MEMS in medicine by classifying these platforms according to their applications in the medical field.

The founder of the Friends Foundation--Tessie Soi.

Science.gov (United States)

Topurua, Ore

2013-01-01

Tessie Soi is well known in Papua New Guinea and beyond for her work with HIV/AIDS (human immunodeficiency virus/acquired immune deficiency syndrome) patients, including through the Friends Foundation, an organization that focuses on helping families affected by HIV and AIDS. This article explores Tessie's early life and childhood, providing insight into some of the values she learned from her parents. Providing details about the Friends Foundation and the Orphan Buddy Systems program, a program Tessie established to support AIDS orphans, the article offers insight into Tessie's beliefs and compassion, simultaneously highlighting the value she places on her family.

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

International Nuclear Information System (INIS)

Luo Xiao-Rong; Hu Gang-Yi; Zhang Zheng-Yuan; Luo Yin-Chun; Fan Ye; Wang Xiao-Wei; Fan Yuan-Hang; Cai Jin-Yong; Wang Pei; Zhou Kun

2013-01-01

A low specific on-resistance (R on,sp ) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates, which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R on,sp of 4.151 mΩ·cm 2 (V GS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

HIGH-RESOLUTION LINEAR POLARIMETRIC IMAGING FOR THE EVENT HORIZON TELESCOPE

Energy Technology Data Exchange (ETDEWEB)

Chael, Andrew A.; Johnson, Michael D.; Narayan, Ramesh; Doeleman, Sheperd S. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Wardle, John F. C. [Brandeis University, Physics Department, Waltham, MA 02454 (United States); Bouman, Katherine L., E-mail: achael@cfa.harvard.edu [Massachusetts Institute of Technology, Computer Science and Artificial Intelligence Laboratory, 32 Vassar Street, Cambridge, MA 02139 (United States)

2016-09-20

Images of the linear polarizations of synchrotron radiation around active galactic nuclei (AGNs) highlight their projected magnetic field lines and provide key data for understanding the physics of accretion and outflow from supermassive black holes. The highest-resolution polarimetric images of AGNs are produced with Very Long Baseline Interferometry (VLBI). Because VLBI incompletely samples the Fourier transform of the source image, any image reconstruction that fills in unmeasured spatial frequencies will not be unique and reconstruction algorithms are required. In this paper, we explore some extensions of the Maximum Entropy Method (MEM) to linear polarimetric VLBI imaging. In contrast to previous work, our polarimetric MEM algorithm combines a Stokes I imager that only uses bispectrum measurements that are immune to atmospheric phase corruption, with a joint Stokes Q and U imager that operates on robust polarimetric ratios. We demonstrate the effectiveness of our technique on 7 and 3 mm wavelength quasar observations from the VLBA and simulated 1.3 mm Event Horizon Telescope observations of Sgr A* and M87. Consistent with past studies, we find that polarimetric MEM can produce superior resolution compared to the standard CLEAN algorithm, when imaging smooth and compact source distributions. As an imaging framework, MEM is highly adaptable, allowing a range of constraints on polarization structure. Polarimetric MEM is thus an attractive choice for image reconstruction with the EHT.

An effective approach for restraining electrochemical corrosion of polycrystalline silicon caused by an HF-based solution and its application for mass production of MEMS devices

International Nuclear Information System (INIS)

Liu, Yunfei; Xie, Jing; Zhao, Hui; Luo, Wei; Yang, Jinling; An, Ji; Yang, Fuhua

2012-01-01

This paper presents a novel method to effectively protect the structural material polycrystalline silicon (polysilicon) from electrochemical corrosion, which often occurs when the MEMS device is released in HF-based solutions, especially when the device contains a noble metal. This corrosion seriously degrades the electrical and mechanical performance as well as the reliability of MEMS devices. In this method, a photoresist (PR) is employed to cover the noble metal, which is electrically coupled with the underlying polysilicon layer. This PR cover can effectually prevent an HF-based solution from diffusing through and arriving at the surface of the noble metal, thus cutting off the electrical current of the electrochemical corrosion reaction. The polysilicon is well protected for longer than 80 min in 49% concentrated HF solutions by a 3 µm-thick AZ 6130 PR film. This fabrication process is simple, reliable and suitable for mass production of high-end micromechanical disk resonators. Benefiting from the technology breakthrough mentioned above, a novel low-cost microfabrication method for disk resonators with high performance has been developed, and the VHF polysilicon disk resonators with resonance frequencies around 282 MHz and Q values larger than 2000 at atmosphere have been produced at wafer level. (paper)

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Science.gov (United States)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures

Development of an X-ray imaging system with SOI pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Nishimura, Ryutaro, E-mail: ryunishi@post.kek.jp [School of High Energy Accelerator Science, SOKENDAI (The Graduate University for Advanced Studies), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Arai, Yasuo; Miyoshi, Toshinobu [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization (KEK-IPNS), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Hirano, Keiichi; Kishimoto, Shunji; Hashimoto, Ryo [Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK-IMSS), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

2016-09-21

An X-ray imaging system employing pixel sensors in silicon-on-insulator technology is currently under development. The system consists of an SOI pixel detector (INTPIX4) and a DAQ system based on a multi-purpose readout board (SEABAS2). To correct a bottleneck in the total throughput of the DAQ of the first prototype, parallel processing of the data taking and storing processes and a FIFO buffer were implemented for the new DAQ release. Due to these upgrades, the DAQ throughput was improved from 6 Hz (41 Mbps) to 90 Hz (613 Mbps). The first X-ray imaging system with the new DAQ software release was tested using 33.3 keV and 9.5 keV mono X-rays for three-dimensional computerized tomography. The results of these tests are presented. - Highlights: • The X-ray imaging system employing the SOI pixel sensor is currently under development. • The DAQ of the first prototype has the bottleneck in the total throughput. • The new DAQ release solve the bottleneck by parallel processing and FIFO buffer. • The new DAQ release was tested using 33.3 keV and 9.5 keV mono X-rays.

Excited baryon form factors at high Q2

International Nuclear Information System (INIS)

Paul Stoler; Gary Adams; Abdellah Ahmidouch; Chris Armstrong; K. Assamagan; Steven Avery; K. Baker; Peter Bosted; Volker Burkert; Jim Dunne; Tom Eden; Rolf Ent; V. Frolov; David Gaskell; P. Gueye; Wendy Hinton; Cynthia Keppel; Wooyoung Kim; Michael Klusman; Doug Koltenuk; David Mack; Richard Madey; David Meekins; Ralph Minehart; Joseph Mitchell; Hamlet Mkrtchyan; James Napolitano; Gabriel Niculescu; Ioana Niculescu; Mina Nozar; John Price; Paul Stoler; Vardan Tadevosyan; Liguang Tang; Michael Witkowski; Stephen Wood

1998-01-01

The role of resonance electroproduction at high Q 2 is discussed in the context of exclusive reactions, as well as the alternative theoretical models which are proposed to treat exclusive reactions in the few GeV 2 /c 2 region of momentum transfer. Jefferson Lab experiment 94-014, which measured the excitation of the Delta (1232) and S 11 (1535) via the reactions p(e,e ' p)pi 0 and p(e,e ' p)eta respectively at Q 2 ∼ 2.8 and 4 GeV 2 /c 2 is described, and the state of analysis reported

FPGA platform for MEMS Disc Resonance Gyroscope (DRG) control

Science.gov (United States)

Keymeulen, Didier; Peay, Chris; Foor, David; Trung, Tran; Bakhshi, Alireza; Withington, Phil; Yee, Karl; Terrile, Rich

2008-04-01

Inertial navigation systems based upon optical gyroscopes tend to be expensive, large, power consumptive, and are not long lived. Micro-Electromechanical Systems (MEMS) based gyros do not have these shortcomings; however, until recently, the performance of MEMS based gyros had been below navigation grade. Boeing and JPL have been cooperating since 1997 to develop high performance MEMS gyroscopes for miniature, low power space Inertial Reference Unit applications. The efforts resulted in demonstration of a Post Resonator Gyroscope (PRG). This experience led to the more compact Disc Resonator Gyroscope (DRG) for further reduced size and power with potentially increased performance. Currently, the mass, volume and power of the DRG are dominated by the size of the electronics. This paper will detail the FPGA based digital electronics architecture and its implementation for the DRG which will allow reduction of size and power and will increase performance through a reduction in electronics noise. Using the digital control based on FPGA, we can program and modify in real-time the control loop to adapt to the specificity of each particular gyro and the change of the mechanical characteristic of the gyro during its life time.

Uncertainty quantification in capacitive RF MEMS switches

Science.gov (United States)

Pax, Benjamin J.

Development of radio frequency micro electrical-mechanical systems (RF MEMS) has led to novel approaches to implement electrical circuitry. The introduction of capacitive MEMS switches, in particular, has shown promise in low-loss, low-power devices. However, the promise of MEMS switches has not yet been completely realized. RF-MEMS switches are known to fail after only a few months of operation, and nominally similar designs show wide variability in lifetime. Modeling switch operation using nominal or as-designed parameters cannot predict the statistical spread in the number of cycles to failure, and probabilistic methods are necessary. A Bayesian framework for calibration, validation and prediction offers an integrated approach to quantifying the uncertainty in predictions of MEMS switch performance. The objective of this thesis is to use the Bayesian framework to predict the creep-related deflection of the PRISM RF-MEMS switch over several thousand hours of operation. The PRISM switch used in this thesis is the focus of research at Purdue's PRISM center, and is a capacitive contacting RF-MEMS switch. It employs a fixed-fixed nickel membrane which is electrostatically actuated by applying voltage between the membrane and a pull-down electrode. Creep plays a central role in the reliability of this switch. The focus of this thesis is on the creep model, which is calibrated against experimental data measured for a frog-leg varactor fabricated and characterized at Purdue University. Creep plasticity is modeled using plate element theory with electrostatic forces being generated using either parallel plate approximations where appropriate, or solving for the full 3D potential field. For the latter, structure-electrostatics interaction is determined through immersed boundary method. A probabilistic framework using generalized polynomial chaos (gPC) is used to create surrogate models to mitigate the costly full physics simulations, and Bayesian calibration and forward

Comparison of short-circuit characteristics of trench gate and planar gate U-shaped channel SOI-LIGBTs

Science.gov (United States)

Zhang, Long; Zhu, Jing; Sun, Weifeng; Zhao, Minna; Huang, Xuequan; Chen, Jiajun; Shi, Longxing; Chen, Jian; Ding, Desheng

2017-09-01

Comparison of short-circuit (SC) characteristics of 500 V rated trench gate U-shaped channel (TGU) SOI-LIGBT and planar gate U-shaped channel (PGU) SOI-LIGBT is made for the first time in this paper. The on-state carrier profile of the TGU structure is reshaped by the dual trenches (a gate trench G1 and a hole barrier trench G2), which leads to a different conduction behavior from that of the PGU structure. The TGU structure exhibits a higher latchup immunity but a severer self-heating effect. At current density (JC) 640 A/cm2. Comparison of layouts and fabrication processes are also made between the two types of devices.

Calibration of an interfacial force microscope for MEMS metrology : FY08-09 activities.

Energy Technology Data Exchange (ETDEWEB)

Houston, Jack E.; Baker, Michael Sean; Crowson, Douglas A.; Mitchell, John Anthony; Moore, Nathan W.

2009-10-01

Progress in MEMS fabrication has enabled a wide variety of force and displacement sensing devices to be constructed. One device under intense development at Sandia is a passive shock switch, described elsewhere (Mitchell 2008). A goal of all MEMS devices, including the shock switch, is to achieve a high degree of reliability. This, in turn, requires systematic methods for validating device performance during each iteration of design. Once a design is finalized, suitable tools are needed to provide quality assurance for manufactured devices. To ensure device performance, measurements on these devices must be traceable to NIST standards. In addition, accurate metrology of MEMS components is needed to validate mechanical models that are used to design devices to accelerate development and meet emerging needs. Progress towards a NIST-traceable calibration method is described for a next-generation, 2D Interfacial Force Microscope (IFM) for applications in MEMS metrology and qualification. Discussed are the results of screening several suitable calibration methods and the known sources of uncertainty in each method.

Optical MEMS for earth observation payloads

Science.gov (United States)

Rodrigues, B.; Lobb, D. R.; Freire, M.

2017-11-01

An ESA study has been taken by Lusospace Ltd and Surrey Satellite Techonoly Ltd (SSTL) into the use of optical Micro Eletro-Mechanical Systems (MEMS) for earth Observation. A review and analysis was undertaken of the Micro-Optical Electro-Mechanical Systems (MOEMS) available in the market with potential application in systems for Earth Observation. A summary of this review will be presented. Following the review two space-instrument design concepts were selected for more detailed analysis. The first was the use of a MEMS device to remove cloud from Earth images. The concept is potentially of interest for any mission using imaging spectrometers. A spectrometer concept was selected and detailed design aspects and benefits evaluated. The second concept developed uses MEMS devices to control the width of entrance slits of spectrometers, to provide variable spectral resolution. This paper will present a summary of the results of the study.

Structural makeup, biopolymer conformation, and biodegradation characteristics of a newly developed super genotype of oats (CDC SO-I versus conventional varieties): a novel approach.

Science.gov (United States)

Damiran, Daalkhaijav; Yu, Peiqiang

2010-02-24

Recently, a new "super" genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it was observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE(L3x), 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.

CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

Science.gov (United States)

Huynh, Duc H.; Nguyen, Phuong D.; Nguyen, Thanh C.; Skafidas, Stan; Evans, Robin

2015-12-01

Frequency reference and timing control devices are ubiquitous in electronic applications. There is at least one resonator required for each of this device. Currently electromechanical resonators such as crystal resonator, ceramic resonator are the ultimate choices. This tendency will probably keep going for many more years. However, current market demands for small size, low power consumption, cheap and reliable products, has divulged many limitations of this type of resonators. They cannot be integrated into standard CMOS (Complement metaloxide- semiconductor) IC (Integrated Circuit) due to material and fabrication process incompatibility. Currently, these devices are off-chip and they require external circuitries to interface with the ICs. This configuration significantly increases the overall size and cost of the entire electronic system. In addition, extra external connection, especially at high frequency, will potentially create negative impacts on the performance of the entire system due to signal degradation and parasitic effects. Furthermore, due to off-chip packaging nature, these devices are quite expensive, particularly for high frequency and high quality factor devices. To address these issues, researchers have been intensively studying on an alternative for type of resonator by utilizing the new emerging MEMS (Micro-electro-mechanical systems) technology. Recent progress in this field has demonstrated a MEMS resonator with resonant frequency of 2.97 GHz and quality factor (measured in vacuum) of 42900. Despite this great achievement, this prototype is still far from being fully integrated into CMOS system due to incompatibility in fabrication process and its high series motional impedance. On the other hand, fully integrated MEMS resonator had been demonstrated but at lower frequency and quality factor. We propose a design and fabrication process for a low cost, high frequency and a high quality MEMS resonator, which can be integrated into a standard

PolyMEMS Actuator: A Polymer-Based Microelectromechanical (MEMS) Actuator with Macroscopic Action

Science.gov (United States)

2002-09-01

DIRECTOR: MICHAEL L. TALBERT, Maj., USAF Technical Advisor , Information Technology Division Information Directorate...technologies meet even two of the four requirements, whereas PolyMEMS meets all four. Robo -Lobster Courtesy of Dr. Joseph Ayers, Northeastern

CARES/Life Used for Probabilistic Characterization of MEMS Pressure Sensor Membranes

Science.gov (United States)

Nemeth, Noel N.

2002-01-01

Microelectromechanical systems (MEMS) devices are typically made from brittle materials such as silicon using traditional semiconductor manufacturing techniques. They can be etched (or micromachined) from larger structures or can be built up with material deposition processes. Maintaining dimensional control and consistent mechanical properties is considerably more difficult for MEMS because feature size is on the micrometer scale. Therefore, the application of probabilistic design methodology becomes necessary for MEMS. This was demonstrated at the NASA Glenn Research Center and Case Western Reserve University in an investigation that used the NASA-developed CARES/Life brittle material design program to study the probabilistic fracture strength behavior of single-crystal SiC, polycrystalline SiC, and amorphous Si3N4 pressurized 1-mm-square thin-film diaphragms. These materials are of interest because of their superior high-temperature characteristics, which are desirable for harsh environment applications such as turbine engine and rocket propulsion system hot sections.

MEMS: A new approach to micro-optics

Energy Technology Data Exchange (ETDEWEB)

Sniegowski, J.J.

1997-12-31

MicroElectroMechanical Systems (MEMS) and their fabrication technologies provide great opportunities for application to micro-optical systems (MOEMS). Implementing MOEMS technology ranges from simple, passive components to complicated, active systems. Here, an overview of polysilicon surface micromachining MEMS combined with optics is presented. Recent advancements to the technology, which may enhance its appeal for micro-optics applications are emphasized. Of all the MEMS fabrication technologies, polysilicon surface micromachining technology has the greatest basis in and leverages the most the infrastructure for silicon integrated circuit fabrication. In that respect, it provides the potential for very large volume, inexpensive production of MOEMS. This paper highlights polysilicon surface micromachining technology in regards to its capability to provide both passive and active mechanical elements with quality optical elements.

Nonlinear optical oscillation dynamics in high-Q lithium niobate microresonators.

Science.gov (United States)

Sun, Xuan; Liang, Hanxiao; Luo, Rui; Jiang, Wei C; Zhang, Xi-Cheng; Lin, Qiang

2017-06-12

Recent advance of lithium niobate microphotonic devices enables the exploration of intriguing nonlinear optical effects. We show complex nonlinear oscillation dynamics in high-Q lithium niobate microresonators that results from unique competition between the thermo-optic nonlinearity and the photorefractive effect, distinctive to other device systems and mechanisms ever reported. The observed phenomena are well described by our theory. This exploration helps understand the nonlinear optical behavior of high-Q lithium niobate microphotonic devices which would be crucial for future application of on-chip nonlinear lithium niobate photonics.

Nano-tribology and materials in MEMS

CERN Document Server

Satyanarayana, N; Lim, Seh

2013-01-01

This book brings together recent developments in the areas of MEMS tribology, novel lubricants and coatings for nanotechnological applications, biomimetics in tribology and fundamentals of micro/nano-tribology. Tribology plays important roles in the functioning and durability of machines at small length scales because of the problems associated with strong surface adhesion, friction, wear etc. Recently, a number of studies have been conducted to understand tribological phenomena at nano/micro scales and many new tribological solutions for MEMS have been proposed.

Inverse Design of a SOI T-junction Polarization Beamsplitter

Science.gov (United States)

Ye, Zi; Qiu, Jifang; Meng, Chong; Zheng, Li; Dong, Zhenli; Wu, Jian

2017-06-01

A SOI T-junction polarization beamsplitter with an ultra-compact footprint of 2.8×2.8μm2 is designed based on the method of inverse design. Simulated results show that the conversion efficiencies for TE and TM lights are 73.34% (simulated insertion loss of 2dB) and 80.4% (simulated insertion loss of 1.7dB) at 1550nm, respectively; the simulated extinction ratios for TE and TM lights are 19.3dB and 13.99dB at 1558nm, respectively.

Review of Automated Design and Optimization of MEMS

DEFF Research Database (Denmark)

Achiche, Sofiane; Fan, Zhun; Bolognini, Francesca

2007-01-01

carried out. This paper presents a review of these techniques. The design task of MEMS is usually divided into four main stages: System Level, Device Level, Physical Level and the Process Level. The state of the art o automated MEMS design in each of these levels is investigated....

Optimization of Contact Force and Pull-in Voltage for Series based MEMS Switch

Directory of Open Access Journals (Sweden)

Abhijeet KSHIRSAGAR

2010-04-01

Full Text Available Cantilever based metal-to-metal contact type MEMS series switch has many applications namely in RF MEMS, Power MEMS etc. A typical MEMS switch consists of a cantilever as actuating element to make the contact between the two metal terminals of the switch. The cantilever is pulled down by applying a pull-in voltage to the control electrode that is located below the middle portion of the cantilever while only the tip portion of the cantilever makes contact between the two terminals. Detailed analysis of bending of the cantilever for different pull-in voltages reveals some interesting facts. At low pull-in voltage the cantilever tip barely touches the two terminals, thus resulting in very less contact area. To increase contact area a very high pull-in voltage is applied, but it lifts the tip from the free end due to concave curving of the cantilever in the middle region of the cantilever where the electrode is located. Again it results in less contact area. Furthermore, the high pull-in voltage produces large stress at the base of the cantilever close to the anchor. Therefore, an optimum, pull-in voltage must exist at which the concave curving is eliminated and contact area is maximum. In this paper authors report the finding of optimum contact force and pull-in voltage.

Ka-Band, MEMS Switched Line Phase Shifters Implemented in Finite Ground Coplanar Waveguide

Science.gov (United States)

Scardelletti, Maximilian C.; Ponchak, George E.; Varaljay, Nicholas C.

2005-01-01

Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.

Infrared properties of the organic semiconductor MEM(TCNQ)2 in its high-temperature phase

DEFF Research Database (Denmark)

Yartsev, V. M.; Jacobsen, Claus Schelde

1981-01-01

The infrared spectrum of N-methyl-N-ethylmorpholinium tetra-cyanoquinodimethane, MEM(TCNQ)2, at temperatures above the phase transition at T=335 K is reported. The oscillator strength associated with chargetransfer processes is shifted down in frequency as compared to the room-temperature phase. ...

Cost-Efficient Wafer-Level Capping for MEMS and Imaging Sensors by Adhesive Wafer Bonding

Directory of Open Access Journals (Sweden)

Simon J. Bleiker

2016-10-01

Full Text Available Device encapsulation and packaging often constitutes a substantial part of the fabrication cost of micro electro-mechanical systems (MEMS transducers and imaging sensor devices. In this paper, we propose a simple and cost-effective wafer-level capping method that utilizes a limited number of highly standardized process steps as well as low-cost materials. The proposed capping process is based on low-temperature adhesive wafer bonding, which ensures full complementary metal-oxide-semiconductor (CMOS compatibility. All necessary fabrication steps for the wafer bonding, such as cavity formation and deposition of the adhesive, are performed on the capping substrate. The polymer adhesive is deposited by spray-coating on the capping wafer containing the cavities. Thus, no lithographic patterning of the polymer adhesive is needed, and material waste is minimized. Furthermore, this process does not require any additional fabrication steps on the device wafer, which lowers the process complexity and fabrication costs. We demonstrate the proposed capping method by packaging two different MEMS devices. The two MEMS devices include a vibration sensor and an acceleration switch, which employ two different electrical interconnection schemes. The experimental results show wafer-level capping with excellent bond quality due to the re-flow behavior of the polymer adhesive. No impediment to the functionality of the MEMS devices was observed, which indicates that the encapsulation does not introduce significant tensile nor compressive stresses. Thus, we present a highly versatile, robust, and cost-efficient capping method for components such as MEMS and imaging sensors.

High-Q Bandpass Comb Filter for Mains Interference Extraction

Directory of Open Access Journals (Sweden)

Neycheva T.

2009-12-01

Full Text Available This paper presents a simple digital high-Q bandpass comb filter for power-line (PL or other periodical interference extraction. The filter concept relies on a correlated signal average resulting in alternating constructive and destructive spectrum interference i.e. the so-called comb frequency response. The presented filter is evaluated by Matlab simulations with real ECG signal contaminated with low amplitude PL interference. The made simulations show that this filter accurately extract the PL interference. It has high-Q notches only at PL odd harmonics and is appropriate for extraction of any kind of odd harmonic interference including rectangular shape. The filter is suitable for real-time operation with popular low-cost microcontrollers.

MEMS Micro-Valve for Space Applications

Science.gov (United States)

Chakraborty, I.; Tang, W. C.; Bame, D. P.; Tang, T. K.

1998-01-01

We report on the development of a Micro-ElectroMechanical Systems (MEMS) valve that is designed to meet the rigorous performance requirements for a variety of space applications, such as micropropulsion, in-situ chemical analysis of other planets, or micro-fluidics experiments in micro-gravity. These systems often require very small yet reliable silicon valves with extremely low leak rates and long shelf lives. Also, they must survive the perils of space travel, which include unstoppable radiation, monumental shock and vibration forces, as well as extreme variations in temperature. Currently, no commercial MEMS valve meets these requirements. We at JPL are developing a piezoelectric MEMS valve that attempts to address the unique problem of space. We begin with proven configurations that may seem familiar. However, we have implemented some major design innovations that should produce a superior valve. The JPL micro-valve is expected to have an extremely low leak rate, limited susceptibility to particulates, vibration or radiation, as well as a wide operational temperature range.

Radioisotope Power Sources for MEMS Devices,

International Nuclear Information System (INIS)

Blanchard, J.P.

2001-01-01

Microelectromechanical systems (MEMS) comprise a rapidly expanding research field with potential applications varying from sensors in airbags to more recent optical applications. Depending on the application, these devices often require an on-board power source for remote operation, especially in cases requiring operation for an extended period of time. Previously suggested power sources include fossil fuels and solar energy, but nuclear power sources may provide significant advantages for certain applications. Hence, the objective of this study is to establish the viability of using radioisotopes to power realistic MEMS devices. A junction-type battery was constructed using silicon and a 63 Ni liquid source. A source volume containing 64 microCi provided a power of ∼0.07 nW. A more novel application of nuclear sources for MEMS applications involves the creation of a resonator that is driven by charge collection in a cantilever beam. Preliminary results have established the feasibility of this concept, and future work will optimize the design for various applications

MEMS - Munich Energy Management System. FIA Project: Exchange of research information; MEMS - Muenchner Energiemanagement-System. FIA-Projekt - Forschungs-Informations-Austausch

Energy Technology Data Exchange (ETDEWEB)

Funk, H.; Fries, W.

2001-10-01

The City of Munich developed the project 'Munich Energy-Management-Systems (MEMS)' with financial support from the Federal Ministry of Economy and Technology. The project is based on a system of building automation using as many standard elements of hardware and software as possible. This will guarantee a high degree of independence from suppliers and subcontractors. The project has led to a reliable working base for the evaluation, measuring and control for ca. 150 municipal buildings. (orig.) [German] Mit dem Projekt 'Muenchner Energie-Management-System (MEMS)' erstellte die Landeshauptstadt Muenchen mit finanzieller Unterstuetzung des Bundesministeriums fuer Wirtschaft und Technologie ein auf der Leitzentrale Haustechnik (LZH) basierendes zentrales Energiemanagementsystem. Die Verwendung moeglichst vieler Standards in Hard- und Software ist dabei ein wesentlicher Gesichtspunkt. Dadurch wurde eine weitgehende Unabhaengigkeit von einem einzelnen Hersteller erreicht. Damit wurde ein Erfassungs-, Auswerte- und Steuerungssystem fuer derzeit rund 150 staedtische Gebaeude geschaffen. (orig.)

Mathematical analysis of partial differential equations modeling electrostatic MEMS

CERN Document Server

Esposito, Pierpaolo; Guo, Yujin

2010-01-01

Micro- and nanoelectromechanical systems (MEMS and NEMS), which combine electronics with miniature-size mechanical devices, are essential components of modern technology. It is the mathematical model describing "electrostatically actuated" MEMS that is addressed in this monograph. Even the simplified models that the authors deal with still lead to very interesting second- and fourth-order nonlinear elliptic equations (in the stationary case) and to nonlinear parabolic equations (in the dynamic case). While nonlinear eigenvalue problems-where the stationary MEMS models fit-are a well-developed

Juan Goytisolo: Le soi, le monde et la création littéraire

Directory of Open Access Journals (Sweden)

Pablo Romero Alegría

2010-01-01

Full Text Available Reseña de la obra: Yannick Llored. Le soi, le monde et la création littéraire. Presses Universitaires du Septentrion. Villeneuve d’Ascq (Francia. 2009. 421 págs. ISBN: 978-2-75740-0089-0

Microelectromechanical Systems (MEMS)

Indian Academy of Sciences (India)

As a field, Microelectromechanical Systems (MEMS) has matured over the last two decades to have several scientific journals dedicated to it. These journals are instrumental in bringing out the interdisciplinary nature of research that the field demands. In the beginning, most papers were process centric where realization of ...

RF MEMS theory, design, and technology

CERN Document Server

Rebeiz, Gabriel M

2003-01-01

Ultrasmall Radio Frequency and Micro-wave Microelectromechanical systems (RF MEMs), such as switches, varactors, and phase shifters, exhibit nearly zero power consumption or loss. For this reason, they are being developed intensively by corporations worldwide for use in telecommunications equipment. This book acquaints readers with the basics of RF MEMs and describes how to design practical circuits and devices with them. The author, an acknowledged expert in the field, presents a range of real-world applications and shares many valuable tricks of the trade.

Enabling technology for MEMS and nanodevices

CERN Document Server

Baltes, Henry; Fedder, Gary K; Hierold, Christofer; Korvink, Jan G; Tabata, Osamu

2013-01-01

This softcover edition of the eponymous volume from the successful ""Advanced Micro & Nanosystems"" series covers all aspects of fabrication of MEMS under CMOS-compatible conditions from design to implementation.It examines the various routes and methods to combine electronics generated by the CMOS technology with novel micromechanical parts into one-chip solutions. Various approaches, fundamental and technological aspects as well as strategies leading to different types of functionalities and presented in detail.For the practicing engineer as well as MSc and PhD students on MEMS cours

Wafer-level vacuum/hermetic packaging technologies for MEMS

Science.gov (United States)

Lee, Sang-Hyun; Mitchell, Jay; Welch, Warren; Lee, Sangwoo; Najafi, Khalil

2010-02-01

An overview of wafer-level packaging technologies developed at the University of Michigan is presented. Two sets of packaging technologies are discussed: (i) a low temperature wafer-level packaging processes for vacuum/hermeticity sealing, and (ii) an environmentally resistant packaging (ERP) technology for thermal and mechanical control as well as vacuum packaging. The low temperature wafer-level encapsulation processes are implemented using solder bond rings which are first patterned on a cap wafer and then mated with a device wafer in order to encircle and encapsulate the device at temperatures ranging from 200 to 390 °C. Vacuum levels below 10 mTorr were achieved with yields in an optimized process of better than 90%. Pressures were monitored for more than 4 years yielding important information on reliability and process control. The ERP adopts an environment isolation platform in the packaging substrate. The isolation platform is designed to provide low power oven-control, vibration isolation and shock protection. It involves batch flip-chip assembly of a MEMS device onto the isolation platform wafer. The MEMS device and isolation structure are encapsulated at the wafer-level by another substrate with vertical feedthroughs for vacuum/hermetic sealing and electrical signal connections. This technology was developed for high performance gyroscopes, but can be applied to any type of MEMS device.

A review: aluminum nitride MEMS contour-mode resonator

Science.gov (United States)

Yunhong, Hou; Meng, Zhang; Guowei, Han; Chaowei, Si; Yongmei, Zhao; Jin, Ning

2016-10-01

Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR. Project supported by National Natural Science Foundation (Nos. 61274001, 61234007, 61504130), the Nurturing and Development Special Projects of Beijing Science and Technology Innovation Base's Financial Support (No. Z131103002813070), and the National Defense Science and Technology Innovation Fund of CAS (No. CXJJ-14-M32).

Bandwidth-limited control and ringdown suppression in high-Q resonators.

Science.gov (United States)

Borneman, Troy W; Cory, David G

2012-12-01

We describe how the transient behavior of a tuned and matched resonator circuit and a ringdown suppression pulse may be integrated into an optimal control theory (OCT) pulse-design algorithm to derive control sequences with limited ringdown that perform a desired quantum operation in the presence of resonator distortions of the ideal waveform. Inclusion of ringdown suppression in numerical pulse optimizations significantly reduces spectrometer deadtime when using high quality factor (high-Q) resonators, leading to increased signal-to-noise ratio (SNR) and sensitivity of inductive measurements. To demonstrate the method, we experimentally measure the free-induction decay of an inhomogeneously broadened solid-state free radical spin system at high Q. The measurement is enabled by using a numerically optimized bandwidth-limited OCT pulse, including ringdown suppression, robust to variations in static and microwave field strengths. We also discuss the applications of pulse design in high-Q resonators to universal control of anisotropic-hyperfine coupled electron-nuclear spin systems via electron-only modulation even when the bandwidth of the resonator is significantly smaller than the hyperfine coupling strength. These results demonstrate how limitations imposed by linear response theory may be vastly exceeded when using a sufficiently accurate system model to optimize pulses of high complexity. Copyright © 2012 Elsevier Inc. All rights reserved.

Development of the micro pixel chamber based on MEMS technology

Science.gov (United States)

Takemura, T.; Takada, A.; Kishimoto, T.; Komura, S.; Kubo, H.; Matsuoka, Y.; Miuchi, K.; Miyamoto, S.; Mizumoto, T.; Mizumura, Y.; Motomura, T.; Nakamasu, Y.; Nakamura, K.; Oda, M.; Ohta, K.; Parker, J. D.; Sawano, T.; Sonoda, S.; Tanimori, T.; Tomono, D.; Yoshikawa, K.

2018-02-01

Micro pixel chambers (μ-PIC) are gaseous two-dimensional imaging detectors originally manufactured using printed circuit board (PCB) technology. They are used in MeV gamma-ray astronomy, medicalimaging, neutron imaging, the search for dark matter, and dose monitoring. The position resolution of the present μ-PIC is approximately 120 μm (RMS), however some applications require a fine position resolution of less than 100 μm. To this end, we have started to develop a μ-PIC based on micro electro mechanical system (MEMS) technology, which provides better manufacturing accuracy than PCB technology. Our simulation predicted the gains of MEMS μ-PICs to be twice those of PCB μ-PICs at the same anode voltage. We manufactured two MEMS μ-PICs and tested them to study their behavior. In these experiments, we successfully operated the fabricatedMEMS μ-PICs and we achieved a maximum gain of approximately 7×103 and collected their energy spectra under irradiation of X-rays from 55Fe. However, the measured gains of the MEMS μ-PICs were less than half of the values predicted in the simulations. We postulated that the gains of the MEMS μ-PICs are diminished by the effect of the silicon used as a semiconducting substrate.

A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

Science.gov (United States)

Priya, Anjali; Mishra, Ram Awadh

2016-04-01

In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

300 nm bandwidth adiabatic SOI polarization splitter-rotators exploiting continuous symmetry breaking.

Science.gov (United States)

Socci, Luciano; Sorianello, Vito; Romagnoli, Marco

2015-07-27

Adiabatic polarization splitter-rotators are investigated exploiting continuous symmetry breaking thereby achieving significant device size and losses reduction in a single mask fabrication process for both SOI channel and ridge waveguides. A crosstalk lower than -25 dB is expected over 300nm bandwidth, making the device suitable for full grid CWDM and diplexer/triplexer FTTH applications at 1310, 1490 and 1550nm.

Intrinsic Nonlinearities and Layout Impacts of 100 V Integrated Power MOSFETs in Partial SOI Process

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

Parasitic capacitances of power semiconductors are a part of the key design parameters of state-of-the-art very high frequency (VHF) power supplies. In this poster, four 100 V integrated power MOSFETs with different layout structures are designed, implemented, and analyzed in a 0.18 ȝm partial...... Silicon-on-Insulator (SOI) process with a die area 2.31 mm2.  A small-signal model of power MOSFETs is proposed to systematically analyze the nonlinear parasitic capacitances in different transistor states: off-state, sub-threshold region, and on-state in the linear region. 3D plots are used to summarize...

Microelectromechanical Systems (MEMS)

Indian Academy of Sciences (India)

to have several scientific journals dedicated to it. These journals are instrumental in bringing out the interdisciplinary nature of research that the field demands. In the beginning, most papers were process centric where realization of a MEMS device or structure using conven- tional CMOS processes or their variants was the ...

Development of scanning holographic display using MEMS SLM

Science.gov (United States)

Takaki, Yasuhiro

2016-10-01

Holography is an ideal three-dimensional (3D) display technique, because it produces 3D images that naturally satisfy human 3D perception including physiological and psychological factors. However, its electronic implementation is quite challenging because ultra-high resolution is required for display devices to provide sufficient screen size and viewing zone. We have developed holographic display techniques to enlarge the screen size and the viewing zone by use of microelectromechanical systems spatial light modulators (MEMS-SLMs). Because MEMS-SLMs can generate hologram patterns at a high frame rate, the time-multiplexing technique is utilized to virtually increase the resolution. Three kinds of scanning systems have been combined with MEMS-SLMs; the screen scanning system, the viewing-zone scanning system, and the 360-degree scanning system. The screen scanning system reduces the hologram size to enlarge the viewing zone and the reduced hologram patterns are scanned on the screen to increase the screen size: the color display system with a screen size of 6.2 in. and a viewing zone angle of 11° was demonstrated. The viewing-zone scanning system increases the screen size and the reduced viewing zone is scanned to enlarge the viewing zone: a screen size of 2.0 in. and a viewing zone angle of 40° were achieved. The two-channel system increased the screen size to 7.4 in. The 360-degree scanning increases the screen size and the reduced viewing zone is scanned circularly: the display system having a flat screen with a diameter of 100 mm was demonstrated, which generates 3D images viewed from any direction around the flat screen.

Antenna Miniaturization with MEMS Tunable Capacitors

DEFF Research Database (Denmark)

Barrio, Samantha Caporal Del; Morris, Art; Pedersen, Gert Frølund

2014-01-01

In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss and their characterist......In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss...

High-Q microwave resonators with a photonic crystal structure

International Nuclear Information System (INIS)

Schuster, M.

2001-08-01

The localisation of electromagnetic energy at a defect in a photonic crystal is similar to a well known effect employed to construct high-Q microwave resonators: In a whispering gallery (WHG-) mode resonator the high Q-factor is achieved by localisation of the electromagnetic field energy by total reflection inside a disk made of dielectric material. The topic of this work is to demonstrate, that WHG-like modes can exist in an air defect in a photonic crystal that extends over several lattice periods; and that a high-Q microwave resonator can be made, utilizing these resonant modes. In numerical simulations, the transmission properties of a photonic crystal structure with hexagonal lattice symmetry have been investigated with a transfer-matrix-method. The eigenmodes of a defect structure in a photonic crystal have been calculated with a quasi-3d finite element integration technique. Experimental results confirm the simulated transmission properties and show the existence of modes inside the band gap, when a defect is introduced in the crystal. Resonator measurements show that a microwave resonator can be operated with those defect modes. It was found out that the main losses of the resonator were caused by bad microwave properties of the used dielectric material and by metal losses on the top and bottom resonator walls. Furthermore, it turned out that the detection of the photonic crystal defect mode was difficult because of a lack of simulation possibilities and high housing mode density in the resonator. (orig.)

Triaxial MEMS accelerometer with screen printed PZT thick film

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Almind, Ninia Sejersen; Brodersen, Simon Hedegaard

2010-01-01

. In this work integration of a screen printed piezoelectric PZT thick film with silicon MEMS technology is shown. A high bandwidth triaxial accelerometer has been designed, fabricated and characterized. The voltage sensitivity is 0.31 mV/g in the vertical direction, 0.062 mV/g in the horizontal direction...

Nondestructive surface profiling of hidden MEMS using an infrared low-coherence interferometric microscope

Science.gov (United States)

Krauter, Johann; Osten, Wolfgang

2018-03-01

There are a wide range of applications for micro-electro-mechanical systems (MEMS). The automotive and consumer market is the strongest driver for the growing MEMS industry. A 100 % test of MEMS is particularly necessary since these are often used for safety-related purposes such as the ESP (Electronic Stability Program) system. The production of MEMS is a fully automated process that generates 90 % of the costs during the packaging and dicing steps. Nowadays, an electrical test is carried out on each individual MEMS component before these steps. However, after encapsulation, MEMS are opaque to visible light and other defects cannot be detected. Therefore, we apply an infrared low-coherence interferometer for the topography measurement of those hidden structures. A lock-in algorithm-based method is shown to calculate the object height and to reduce ghost steps due to the 2π -unambiguity. Finally, measurements of different MEMS-based sensors are presented.

MEMS-Based Micro Gas Chromatography: Design, Fabrication and Characterization

OpenAIRE

Zareian-Jahromi, Mohammad Amin

2009-01-01

This work is focused on the design, fabrication and characterization of high performance MEMS-based micro gas chromatography columns having wide range of applications in the pharmaceutical industry, environmental monitoring, petroleum distillation, clinical chemistry, and food processing. The first part of this work describes different approaches to achieve high-performance microfabricated silicon-glass separation columns for micro gas chromatographic (µGC) systems. The capillary width effec...

Open-flavor charm and bottom s q q ¯ Q ¯ and q q q ¯ Q ¯ tetraquark states

Science.gov (United States)

Chen, Wei; Chen, Hua-Xing; Liu, Xiang; Steele, T. G.; Zhu, Shi-Lin

2017-06-01

We provide comprehensive investigations for the mass spectrum of exotic open-flavor charmed/bottom s q q ¯ c ¯ , q q q ¯ c ¯ , s q q ¯ b ¯ , q q q ¯ b ¯ tetraquark states with various spin-parity assignments JP=0+,1+,2+ and 0- , 1- in the framework of QCD sum rules. In the diquark configuration, we construct the diquark-antidiquark interpolating tetraquark currents using the color-antisymmetric scalar and axial-vector diquark fields. The stable mass sum rules are established in reasonable parameter working ranges, which are used to give reliable mass predictions for these tetraquark states. We obtain the mass spectra for the open-flavor charmed/bottom s q q ¯c ¯, q q q ¯c ¯, s q q ¯b ¯, q q q ¯b ¯ tetraquark states with various spin-parity quantum numbers. In addition, we suggest searching for exotic doubly-charged tetraquarks, such as [s d ][u ¯ c ¯ ]→Ds(*)-π- in future experiments at facilities such as BESIII, BelleII, PANDA, LHCb, and CMS, etc.

Penning trap mass spectrometry Q-value determinations for highly forbidden β-decays

Science.gov (United States)

Sandler, Rachel; Bollen, Georg; Eibach, Martin; Gamage, Nadeesha; Gulyuz, Kerim; Hamaker, Alec; Izzo, Chris; Kandegedara, Rathnayake; Redshaw, Matt; Ringle, Ryan; Valverde, Adrian; Yandow, Isaac; Low Energy Beam Ion Trap Team

2017-09-01

Over the last several decades, extremely sensitive, ultra-low background beta and gamma detection techniques have been developed. These techniques have enabled the observation of very rare processes, such as highly forbidden beta decays e.g. of 113Cd, 50V and 138La. Half-life measurements of highly forbidden beta decays provide a testing ground for theoretical nuclear models, and the comparison of calculated and measured energy spectra could enable a determination of the values of the weak coupling constants. Precision Q-value measurements also allow for systematic tests of the beta-particle detection techniques. We will present the results and current status of Q value determinations for highly forbidden beta decays. The Q values, the mass difference between parent and daughter nuclides, are measured using the high precision Penning trap mass spectrometer LEBIT at the National Superconducting Cyclotron Laboratory.

Políticas Públicas de Memória O Programa Pontos de Memória no Contexto Sul-Rio-Grandense

Directory of Open Access Journals (Sweden)

Mariana Boujadi Mariano da Silva

2016-12-01

Full Text Available O presente estudo busca realizar uma análise do Programa Pontos de Memória, do Instituto Brasileiro de Museus. Analisando o Programa, observa-se a iniciativa de preservar a memória de determinados grupos sociais considerados excluídos da representação de museus ditos tradicionais, através da implementação de espaços de memória ou ações sociomuseológicas, que narrem suas histórias a partir do suporte de patrimônios locais. A análise parte de questionamentos iniciais: quais são as memórias e as identidades que o Programa seleciona para narrar, através de quais ferramentas ocorre a divulgação e sobretudo a apropriação deste patrimônio por parte da comunidade? Para analisar as causas e os efeitos desta política pública, o trabalho observará e discutirá o alcance e a influência que esses espaços exercem nas comunidades, as ações desenvolvidas e a longevidade desses espaços ou ações no contexto sul-rio-grandense.

Electrical characteristics of SiGe-base bipolar transistors on thin-film SOI substrates

International Nuclear Information System (INIS)

Liao, Shu-Hui; Chang, Shu-Tong

2010-01-01

This paper, based on two-dimensional simulations, provides a comprehensive analysis of the electrical characteristics of the Silicon germanium (SiGe)-base bipolar transistors on thin-film siliconon-insulator (SOI) substrates. The impact of the buried oxide thickness (T OX ), the emitter width (W E ), and the lateral distance between the edge of the intrinsic base and the reach-through region (L col ) on both the AC and DC device characteristics was analyzed in detail. Regarding the DC characteristics, the simulation results suggest that a thicker T OX gives a larger base-collector breakdown voltage (BV CEO ), whereas reducing the T OX leads to an enhanced maximum electric field at the B-C junction. As for the AC characteristics, cut-off frequency (f T ) increases slightly with increasing buried oxide thickness and finally saturates to a constant value when the buried oxide thickness is about 0.15 μm. The collector-substrate capacitance (C CS ) decreases with increasing buried oxide thickness while the maximum oscillation frequency (f max ) increases with increasing buried oxide thickness. Furthermore, the impact of self-heating effects in the device was analyzed in various areas. The thermal resistance as a function of the buried oxide thickness indicates that the thermal resistance of the SiGe-base bipolar transistor on a SOI substrate is slightly higher than that of a bulk SiGe-base bipolar transistor. The thermal resistance is reduced by ∼37.89% when the emitter width is increased by a factor of 5 for a fixed buried oxide thickness of 0.1 μm. All the results can be used to design and optimize SiGe-base bipolar transistors on SOI substrates with minimum thermal resistance to enhance device performance.

A CMOS/SOI Single-input PWM Discriminator for Low-voltage Body-implanted Applications

Directory of Open Access Journals (Sweden)

Jader A. De Lima

2002-01-01

Full Text Available A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a novel double-integration concept and does not require low-pass filtering. Non-overlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 μm single-metal thin-film CMOS/SOI fabrication process and has an effective area of 2 mm2. Measured resolution of encoding parameter α is better than 10% at 6 MHz and VDD = 3.3 V. Idle-mode consumption is 340 μW. Pulses of frequencies up to15 MHz and α =10% can be discriminated for 2.3 V ≤ VDD ≤ 3.3 V. Such an excellent immunity to VDD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.

Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring.

Science.gov (United States)

Malits, Maria; Brouk, Igor; Nemirovsky, Yael

2018-05-19

This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage ( V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K⁻500 K temperature range while consuming only 30 µW during operation.

Thin NbN film structures on SOI for SNSPD

Energy Technology Data Exchange (ETDEWEB)

Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

2012-07-01

Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

A Review on Key Issues and Challenges in Devices Level MEMS Testing

Directory of Open Access Journals (Sweden)

Muhammad Shoaib

2016-01-01

Full Text Available The present review provides information relevant to issues and challenges in MEMS testing techniques that are implemented to analyze the microelectromechanical systems (MEMS behavior for specific application and operating conditions. MEMS devices are more complex and extremely diverse due to the immersion of multidomains. Their failure modes are distinctive under different circumstances. Therefore, testing of these systems at device level as well as at mass production level, that is, parallel testing, is becoming very challenging as compared to the IC test, because MEMS respond to electrical, physical, chemical, and optical stimuli. Currently, test systems developed for MEMS devices have to be customized due to their nondeterministic behavior and complexity. The accurate measurement of test systems for MEMS is difficult to quantify in the production phase. The complexity of the device to be tested required maturity in the test technique which increases the cost of test development; this practice is directly imposed on the device cost. This factor causes a delay in time-to-market.

Development, characterization and application of compact spectrometers based on MEMS with in-plane capacitive drives

Science.gov (United States)

Kenda, A.; Kraft, M.; Tortschanoff, A.; Scherf, Werner; Sandner, T.; Schenk, Harald; Luettjohann, Stephan; Simon, A.

2014-05-01

With a trend towards the use of spectroscopic systems in various fields of science and industry, there is an increasing demand for compact spectrometers. For UV/VIS to the shortwave near-infrared spectral range, compact hand-held polychromator type devices are widely used and have replaced larger conventional instruments in many applications. Still, for longer wavelengths this type of compact spectrometers is lacking suitable and affordable detector arrays. In perennial development Carinthian Tech Research AG together with the Fraunhofer Institute for Photonic Microsystems endeavor to close this gap by developing spectrometer systems based on photonic MEMS. Here, we review on two different spectrometer developments, a scanning grating spectrometer working in the NIR and a FT-spectrometer accessing the mid-IR range up to 14 μm. Both systems are using photonic MEMS devices actuated by in-plane comb drive structures. This principle allows for high mechanical amplitudes at low driving voltages but results in gratings respectively mirrors oscillating harmonically. Both systems feature special MEMS structures as well as aspects in terms of system integration which shall tease out the best possible overall performance on the basis of this technology. However, the advantages of MEMS as enabling technology for high scanning speed, miniaturization, energy efficiency, etc. are pointed out. Whereas the scanning grating spectrometer has already evolved to a product for the point of sale analysis of traditional Chinese medicine products, the purpose of the FT-spectrometer as presented is to demonstrate what is achievable in terms of performance. Current developments topics address MEMS packaging issues towards long term stability, further miniaturization and usability.

Carbon material based microelectromechanical system (MEMS): Fabrication and devices

Science.gov (United States)

Xu, Wenjun

This PhD dissertation presents the exploration and development of two carbon materials, carbon nanotubes (CNTs) and carbon fiber (CF), as either key functional components or unconventional substrates for a variety of MEMS applications. Their performance in three different types of MEMS devices, namely, strain/stress sensors, vibration-powered generators and fiber solar cells, were evaluated and the working mechanisms of these two non-traditional materials in these systems were discussed. The work may potentially enable the development of new types of carbon-MEMS devices. Carbon nanotubes were selected from the carbon family due to several advantageous characteristics that this nanomaterial offers. They carry extremely high mechanical strength (Ey=1TPa), superior electrical properties (current density of 4x109 A/cm2), exceptional piezoresistivity (G=2900), and unique spatial format (high aspect ratio hollow nanocylinder), among other properties. If properly utilized, all these merits can give rise to a variety of new types of carbon nanotube based micro- and nanoelectronics that can greatly fulfill the need for the next generation of faster, smaller and better devices. However, before these functions can be fully realized, one substantial issue to cope with is how to implement CNTs into these systems in an effective and controllable fashion. Challenges associated with CNTs integration include very poor dispersibility in solvents, lack of melting/sublimation point, and unfavorable rheology with regard to mixing and processing highly viscous, CNT-loaded polymer solutions. These issues hinder the practical progress of CNTs both in a lab scale and in the industrial level. To this end, a MEMS-assisted electrophoretic deposition technique was developed, aiming to achieve controlled integration of CNT into both conventional and flexible microsystems at room temperature with a relatively high throughput. MEMS technology has demonstrated strong capability in developing

A low-noise MEMS accelerometer for unattended ground sensor applications

Science.gov (United States)

Speller, Kevin E.; Yu, Duli

2004-09-01

A low-noise micro-machined servo accelerometer has been developed for use in Unattended Ground Sensors (UGS). Compared to conventional coil-and-magnet based velocity transducers, this Micro-Electro-Mechanical System (MEMS) accelerometer offers several key benefits for battlefield monitoring. Many UGS require a compass to determine deployment orientation with respect to magnetic North. This orientation information is critical for determining the bearing of incoming signals. Conventional sensors with sensing technology based on a permanent magnet can cause interference with a compass when used in close proximity. This problem is solved with a MEMS accelerometer which does not require any magnetic materials. Frequency information below 10 Hz is valuable for identification of signal sources. Conventional seismometers used in UGS are typically limited in frequency response from 20 to 200 Hz. The MEMS accelerometer has a flat frequency response from DC to 5 kHz. The wider spectrum of signals received improves detection, classification and monitoring on the battlefield. The DC-coupled output of the MEMS accelerometer also has the added benefit of providing tilt orientation data for the deployed UGS. Other performance parameters of the MEMS accelerometer that are important to UGS such as size, weight, shock survivability, phase response, distortion, and cross-axis rejection will be discussed. Additionally, field test data from human footsteps recorded with the MEMS accelerometer will be presented.

Integrated optical MEMS using through-wafer vias and bump-bonding.

Energy Technology Data Exchange (ETDEWEB)

McCormick, Frederick Bossert; Frederick, Scott K.

2008-01-01

This LDRD began as a three year program to integrate through-wafer vias, micro-mirrors and control electronics with high-voltage capability to yield a 64 by 64 array of individually controllable micro-mirrors on 125 or 250 micron pitch with piston, tip and tilt movement. The effort was a mix of R&D and application. Care was taken to create SUMMiT{trademark} (Sandia's ultraplanar, multilevel MEMS technology) compatible via and mirror processes, and the ultimate goal was to mate this MEMS fabrication product to a complementary metal-oxide semiconductor (CMOS) electronics substrate. Significant progress was made on the via and mirror fabrication and design, the attach process development as well as the electronics high voltage (30 volt) and control designs. After approximately 22 months, the program was ready to proceed with fabrication and integration of the electronics, final mirror array, and through wafer vias to create a high resolution OMEMS array with individual mirror electronic control. At this point, however, mission alignment and budget constraints reduced the last year program funding and redirected the program to help support the through-silicon via work in the Hyper-Temporal Sensors (HTS) Grand Challenge (GC) LDRD. Several months of investigation and discussion with the HTS team resulted in a revised plan for the remaining 10 months of the program. We planned to build a capability in finer-pitched via fabrication on thinned substrates along with metallization schemes and bonding techniques for very large arrays of high density interconnects (up to 2000 x 2000 vias). Through this program, Sandia was able to build capability in several different conductive through wafer via processes using internal and external resources, MEMS mirror design and fabrication, various bonding techniques for arrayed substrates, and arrayed electronics control design with high voltage capability.

A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

Science.gov (United States)

Yau, J.-B.; Cai, J.; Hashemi, P.; Balakrishnan, K.; D'Emic, C.; Ning, T. H.

2018-04-01

We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally enhanced dopant diffusion) are a show stopper for such bipolar technology. Measurements of IC-VCE and Gummel currents in parallel-connected transistor chains as a function of post-fabrication rapid thermal anneal cycles allow several process-related electrical defects to be identified. They include defective emitter-base and collector-base diodes, pipe defects, and defects associated with a dopant-deficient region in an extrinsic base adjacent its intrinsic base. There is no evidence of pipe defects being a major concern in SOI lateral bipolar transistors.

Design and Fabrication of a Reconfigurable MEMS-Based Antenna

KAUST Repository

Martinez, Miguel Angel Galicia

2011-01-01

According to the high gain obtained in a lossy silicon substrate and the compatibility of the custom MEMS process with the state of the art standard CMOS process, it is believed that the design of this antenna can lead to efficient and low cost reconfigurable millimeter-wave System-on-Chip (SoC) solution.

Modeling and non-linear responses of MEMS capacitive accelerometer

Directory of Open Access Journals (Sweden)

Sri Harsha C.

2014-01-01

Full Text Available A theoretical investigation of an electrically actuated beam has been illustrated when the electrostatic-ally actuated micro-cantilever beam is separated from the electrode by a moderately large gap for two distinct types of geometric configurations of MEMS accelerometer. Higher order nonlinear terms have been taken into account for studying the pull in voltage analysis. A nonlinear model of gas film squeezing damping, another source of nonlinearity in MEMS devices is included in obtaining the dynamic responses. Moreover, in the present work, the possible source of nonlinearities while formulating the mathematical model of a MEMS accelerometer and their influences on the dynamic responses have been investigated. The theoretical results obtained by using MATLAB has been verified with the results obtained in FE software and has been found in good agreement. Criterion towards stable micro size accelerometer for each configuration has been investigated. This investigation clearly provides an understanding of nonlinear static and dynamics characteristics of electrostatically micro cantilever based device in MEMS.

Thin Film Transistor Control Circuitry for MEMS Acoustic Transducers

Science.gov (United States)

Daugherty, Robin

This work seeks to develop a practical solution for short range ultrasonic communications and produce an integrated array of acoustic transmitters on a flexible substrate. This is done using flexible thin film transistor (TFT) and micro electromechanical systems (MEMS). The goal is to develop a flexible system capable of communicating in the ultrasonic frequency range at a distance of 10-100 meters. This requires a great deal of innovation on the part of the FDC team developing the TFT driving circuitry and the MEMS team adapting the technology for fabrication on a flexible substrate. The technologies required for this research are independently developed. The TFT development is driven primarily by research into flexible displays. The MEMS development is driving by research in biosensors and micro actuators. This project involves the integration of TFT flexible circuit capabilities with MEMS micro actuators in the novel area of flexible acoustic transmitter arrays. This thesis focuses on the design, testing and analysis of the circuit components required for this project.

High repetition rate, high energy, actively Q-switched all-in-fiber laser

Science.gov (United States)

Lecourt, J. B.; Bertrand, A.; Guillemet, S.; Hernandez, Y.; Giannone, D.

2010-05-01

We report an actively Q-switched Ytterbium-doped all-in-fibre laser delivering 10ns pulses with high repetition rate (from 100kHz to 1MHz). The laser operation has been validated at three different wavelengths (1040, 1050 and 1064nm). The laser can deliver up to 20Watts average power with an high beam quality (M2 = 1).

A Novel Technique for Design of Ultra High Tunable Electrostatic Parallel Plate RF MEMS Variable Capacitor

Science.gov (United States)

Baghelani, Masoud; Ghavifekr, Habib Badri

2017-12-01

This paper introduces a novel method for designing of low actuation voltage, high tuning ratio electrostatic parallel plate RF MEMS variable capacitors. It is feasible to achieve ultra-high tuning ratios way beyond 1.5:1 barrier, imposed by pull-in effect, by the proposed method. The proposed method is based on spring strengthening of the structure just before the unstable region. Spring strengthening could be realized by embedding some dimples on the spring arms with the precise height. These dimples shorten the spring length when achieved to the substrate. By the proposed method, as high tuning ratios as 7.5:1 is attainable by only considering four dimple sets. The required actuation voltage for this high tuning ratio is 14.33 V which is simply achievable on-chip by charge pump circuits. Brownian noise effect is also discussed and mechanical natural frequency of the structure is calculated.

Microprocessor-controlled meter of high Q-values

International Nuclear Information System (INIS)

Bun'kov, S.N.; Konstantinov, V.I.; Masalov, V.L.; Sevrukova, L.M.; Tokarev, A.D.; Usiv, Yu.V.

1990-01-01

The paper describes the functional model of a high-precision microcomputer-controlled test facility for studying the electric and physical parameters of superconducting cavities. The basic unit of the test facility is high-stability retunable RF oscillator. It is designed following the scheme of the frequency phase tuning using standard equipment. The systematic error in measuring the loaded Q-value of reentrant cavities is not larger than 5%. A dedicated built-in microcomputer is used to control the measuring test facility and to make the commutations required. 2 refs.; 2 figs

Thermal Desalination using MEMS and Salinity-Gradient Solar Pond Technology

Science.gov (United States)

Lu, H.; Walton, J. C.; Hein, H.