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Sample records for high-power switching semiconductors

  1. High-power semiconductor RSD-based switch

    Bezuglov, V G; Galakhov, I V; Grusin, I A [All-Russian Scientific Research Inst. of Experimental Physics, Sarov (Russian Federation); and others

    1997-12-31

    The operating principle and test results of a high-power semiconductor RSD-based switch with the following operating parameters is described: operating voltage 25 kV, peak operating current 200 kA, maximum transferred charge 70 C. The switch is intended for use by high-power capacitor banks of state-of-the-art research facilities. The switch was evaluated for applicability in commercial pulsed systems. The possibility of increasing the peak operating current to 500 kA is demonstrated. (author). 4 figs., 2 refs.

  2. High power semiconductor switching in the nanosecond regime

    Zucker, O.S.; Long, J.R.; Smith, V.L.; Page, D.J.; Roberts, J.S.

    1975-12-01

    Light activated multilayered silicon semiconductor devices have been used to switch at megawatt power levels with nanosecond turnon time. Current rate of rise of 700 kA/μs at 10 kA, with 1 kV across the load have been achieved. Recovery time of 1 millisec has been obtained. Applicability to fusion research needs is discussed

  3. Transparent ceramic photo-optical semiconductor high power switches

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  4. High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

    Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.

    1994-01-01

    Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

  5. Development of high power X-band semiconductor microwave switch for pulse compression systems of future linear colliders

    Fumihiko Tamura

    2002-06-01

    Full Text Available We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the TE_{01} mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm.

  6. A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2018-01-01

    . This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

  7. Switching power converters medium and high power

    Neacsu, Dorin O

    2013-01-01

    An examination of all of the multidisciplinary aspects of medium- and high-power converter systems, including basic power electronics, digital control and hardware, sensors, analog preprocessing of signals, protection devices and fault management, and pulse-width-modulation (PWM) algorithms, Switching Power Converters: Medium and High Power, Second Edition discusses the actual use of industrial technology and its related subassemblies and components, covering facets of implementation otherwise overlooked by theoretical textbooks. The updated Second Edition contains many new figures, as well as

  8. High power switches for ion induction linacs

    Humphries, S.; Savage, M.; Saylor, W.B.

    1985-01-01

    The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystronlike interaction with the accelerating cavities, leading to enhanced momentum spread. In this paper, we describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

  9. High power switches for ion induction linacs

    Humphries, S. Jr.; Savage, M.; Saylor, W.B.

    1985-01-01

    The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystron-like interaction with the accelerating cavities leading to enhanced momentum spread. In this paper, the author describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

  10. Reduced filamentation in high power semiconductor lasers

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

    1999-01-01

    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  11. Compound semiconductor optical waveguide switch

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  12. Low-confinement high-power semiconductor lasers

    Buda, M.

    1999-01-01

    This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

  13. Low prepulse, high power density water dielectric switching

    Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

    1979-01-01

    Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

  14. Nanosecond high-power dense microplasma switch for visible light

    Bataller, A., E-mail: bataller@physics.ucla.edu; Koulakis, J.; Pree, S.; Putterman, S. [Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, California 90095 (United States)

    2014-12-01

    Spark discharges in high-pressure gas are known to emit a broadband spectrum during the first 10 s of nanoseconds. We present calibrated spectra of high-pressure discharges in xenon and show that the resulting plasma is optically thick. Laser transmission data show that such a body is opaque to visible light, as expected from Kirchoff's law of thermal radiation. Nanosecond framing images of the spark absorbing high-power laser light are presented. The sparks are ideal candidates for nanosecond, high-power laser switches.

  15. Neutron and gamma irradiation effects on power semiconductor switches

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  16. Neutron and gamma irradiation effects on power semiconductor switches

    Schwarze, G.E.; Frasca, A.J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN bipolar junction transistors (BJTs), and metal-oxide-semiconductor field effect transistors (MOSFETs)

  17. High Power Mid-IR Semiconductor Lasers for LADAR

    Lester, Luke

    2003-01-01

    The growing need for antimonide-based, room temperature, 2-5 micrometers, semiconductor lasers for trace gas spectroscopy, ultra-low loss communication, infrared countermeasures, and ladar motivated this work...

  18. Application of plasma erosion opening switches to high power accelerators for pulse compression and power multiplication

    Meyer, R.A.; Boller, J.R.; Commisso, R.J.

    1983-01-01

    A new vacuum opening switch called a plasma erosion opening switch is described. A model of its operation is presented and the energy efficiency of such a switch is discussed. Recent high power experiments on the Gamble II accelerator are described and compared to previous experiments

  19. Application of statistical methods (SPC) for an optimized control of the irradiation process of high-power semiconductors

    Mittendorfer, J.; Zwanziger, P.

    2000-01-01

    High-power bipolar semiconductor devices (thyristors and diodes) in a disc-type shape are key components (semiconductor switches) for high-power electronic systems. These systems are important for the economic design of energy transmission systems, i.e. high-power drive systems, static compensation and high-voltage DC transmission lines. In their factory located in Pretzfeld, Germany, the company, eupec GmbH+Co.KG (eupec), is producing disc-type devices with ceramic encapsulation in the high-end range for the world market. These elements have to fulfill special customer requirements and therefore deliver tailor-made trade-offs between their on-state voltage and dynamic switching behaviour. This task can be achieved by applying a dedicated electron irradiation on the semiconductor pellets, which tunes this trade-off. In this paper, the requirements to the irradiation company Mediscan GmbH, from the point of view of the semiconductor manufacturer, are described. The actual strategy for controlling the irradiation results to fulfill these requirements are presented, together with the choice of relevant parameters from the viewpoint of the irradiation company. The set of process parameters monitored, using statistical process control (SPC) techniques, includes beam current and energy, conveyor speed and irradiation geometry. The results are highlighted and show the successful co-operation in this business. Watching this process vice versa, an idea is presented and discussed to develop the possibilities of a highly sensitive dose detection device by using modified diodes, which could function as accurate yet cheap and easy-to-use detectors as routine dosimeters for irradiation institutes. (author)

  20. Fast-opening vacuum switches for high-power inductive energy storage

    Cooperstein, G.

    1988-01-01

    The subject of fast-opening vacuum switches for high-power inductive energy storage is emerging as an exciting new area of plasma science research. This opening switch technology, which generally involves the use of plasmas as the switching medium, is key to the development of inductive energy storage techniques for pulsed power which have a number of advantages over conventional capacitive techniques with regard to cost and size. This paper reviews the state of the art in this area with emphasis on applications to inductive storage pulsed power generators. Discussion focuses on fast-opening vacuum switches capable of operating at high power (≥10 12 W). These include plasma erosion opening switches, ion beam opening switches, plasma filled diodes, reflex diodes, plasma flow switches, and other novel vacuum opening switches

  1. Switching speed limitations of high power IGBT modules

    Incau, Bogdan Ioan; Trintis, Ionut; Munk-Nielsen, Stig

    2015-01-01

    for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions....

  2. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

    Guo, Jiquan [Stanford Univ., CA (United States)

    2008-12-01

    In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

  3. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Podoskin, A. A., E-mail: podoskin@mail.ioffe.ru; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  4. CO2 laser pulse switching by optically excited semiconductors

    Silva, V.L. da.

    1986-01-01

    The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

  5. Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

    Minaev, V P

    2005-01-01

    High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

  6. A fast switch, combiner and narrow-band filter for high-power millimetre wave beams

    Kasparek, W.; Petelin, M. I.; Shchegolkov, D. Yu; Erckmann, V.; Plaum, B.; Bruschi, A.; ECRH Groups at IPP Greifswald; Karlsruhe, FZK; Stuttgart, IPF

    2008-05-01

    A fast directional switch (FADIS) is described, which allows controlled switching of high-power microwaves between two outputs. A possible application could be synchronous stabilization of neoclassical tearing modes (NTMs). Generally, the device can be used to share the installed EC power between different types of launchers or different applications (e.g. in ITER, midplane/upper launcher). The switching is performed electronically without moving parts by a small frequency-shift keying of the gyrotron (some tens of megahertz), and a narrow-band diplexer. The device can be operated as a beam combiner also, which offers attractive transmission perspectives in multi-megawatt ECRH systems. In addition, these diplexers are useful for plasma diagnostic systems employing high-power sources due to their filter characteristics. The principle and the design of a four-port quasi-optical resonator diplexer is presented. Low-power measurements of switching contrast, mode purity and efficiency show good agreement with theory. Preliminary frequency modulation characteristics of gyrotrons are shown, and first results from high-power switching experiments using the ECRH system for W7-X are presented.

  7. A fast switch, combiner and narrow-band filter for high-power millimetre wave beams

    Kasparek, W.; Plaum, B.; Petelin, M.I.; Shchegolkov, D.Yu; Erckmann, V.; Bruschi, A.

    2008-01-01

    A fast directional switch (FADIS) is described, which allows controlled switching of high-power microwaves between two outputs. A possible application could be synchronous stabilization of neoclassical tearing modes (NTMs). Generally, the device can be used to share the installed EC power between different types of launchers or different applications (e.g. in ITER, midplane/upper launcher). The switching is performed electronically without moving parts by a small frequency-shift keying of the gyrotron (some tens of megahertz), and a narrow-band diplexer. The device can be operated as a beam combiner also, which offers attractive transmission perspectives in multi-megawatt ECRH systems. In addition, these diplexers are useful for plasma diagnostic systems employing high-power sources due to their filter characteristics. The principle and the design of a four-port quasi-optical resonator diplexer is presented. Low-power measurements of switching contrast, mode purity and efficiency show good agreement with theory. Preliminary frequency modulation characteristics of gyrotrons are shown, and first results from high-power switching experiments using the ECRH system for W7-X are presented

  8. Third harmonic generation of high power far infrared radiation in semiconductors

    Urban, M [Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)

    1996-04-01

    We investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 {mu}m and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 {mu}m laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. figs., tabs., refs.

  9. Active high-power RF pulse compression using optically switched resonant delay lines

    Tantawi, S.G.; Ruth, R.D.; Vlieks, A.E.

    1996-11-01

    The authors present the design and a proof of principle experimental results of an optically controlled high power rf pulse compression system. The design should, in principle, handle few hundreds of Megawatts of power at X-band. The system is based on the switched resonant delay line theory. It employs resonant delay lines as a means of storing rf energy. The coupling to the lines is optimized for maximum energy storage during the charging phase. To discharge the lines, a high power microwave switch increases the coupling to the lines just before the start of the output pulse. The high power microwave switch, required for this system, is realized using optical excitation of an electron-hole plasma layer on the surface of a pure silicon wafer. The switch is designed to operate in the TE 01 mode in a circular waveguide to avoid the edge effects present at the interface between the silicon wafer and the supporting waveguide; thus, enhancing its power handling capability

  10. Ferroelectric switch for a high-power Ka-band active pulse compressor

    Hirshfield, Jay L. [Omega-P, Inc., New Haven, CT (United States)

    2013-12-18

    Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

  11. High-power electro-optic switch technology based on novel transparent ceramic

    Xue-Jiao, Zhang; Qing, Ye; Rong-Hui, Qu; Hai-wen, Cai

    2016-03-01

    A novel high-power polarization-independent electro-optic switch technology based on a reciprocal structure Sagnac interferometer and a transparent quadratic electro-optic ceramic is proposed and analyzed theoretically and experimentally. The electro-optic ceramic is used as a phase retarder for the clockwise and counter-clockwise polarized light, and their polarization directions are adjusted to their orthogonal positions by using two half-wave plates. The output light then becomes polarization-independent with respect to the polarization direction of the input light. The switch characteristics, including splitter ratios and polarization states, are theoretically analyzed and simulated in detail by the matrix multiplication method. An experimental setup is built to verify the analysis and experimental results. A new component ceramic is used and a non-polarizing cube beam splitter (NPBS) replaces the beam splitter (BS) to lower the ON/OFF voltage to 305 V and improve the extinction ratio by 2 dB. Finally, the laser-induced damage threshold for the proposed switch is measured and discussed. It is believed that potential applications of this novel polarization-independent electro-optic switch technology will be wide, especially for ultrafast high-power laser systems. Project supported by the National Natural Science Foundation of China (Grant Nos. 61137004, 61405218, and 61535014).

  12. High-power electro-optic switch technology based on novel transparent ceramic

    Zhang Xue-Jiao; Ye Qing; Qu Rong-Hui; Cai Hai-wen

    2016-01-01

    A novel high-power polarization-independent electro-optic switch technology based on a reciprocal structure Sagnac interferometer and a transparent quadratic electro-optic ceramic is proposed and analyzed theoretically and experimentally. The electro-optic ceramic is used as a phase retarder for the clockwise and counter-clockwise polarized light, and their polarization directions are adjusted to their orthogonal positions by using two half-wave plates. The output light then becomes polarization-independent with respect to the polarization direction of the input light. The switch characteristics, including splitter ratios and polarization states, are theoretically analyzed and simulated in detail by the matrix multiplication method. An experimental setup is built to verify the analysis and experimental results. A new component ceramic is used and a non-polarizing cube beam splitter (NPBS) replaces the beam splitter (BS) to lower the ON/OFF voltage to 305 V and improve the extinction ratio by 2 dB. Finally, the laser-induced damage threshold for the proposed switch is measured and discussed. It is believed that potential applications of this novel polarization-independent electro-optic switch technology will be wide, especially for ultrafast high-power laser systems. (paper)

  13. Third harmonic generation of high power far infrared radiation in semiconductors

    Urban, M.

    1996-04-01

    In this work we investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 μm and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 μm laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. (author) figs

  14. Transistor electronics use of semiconductor components in switching operations

    Rumpf, Karl-Heinz

    2014-01-01

    Transistor Electronics: Use of Semiconductor Components in Switching Operations presents the semiconductor components as well as their elementary circuits. This book discusses the scope of application of electronic devices to increase productivity. Organized into eight chapters, this book begins with an overview of the general equation for the representation of integer positive numbers. This text then examines the properties and characteristics of basic electronic components, which relates to an understanding of the operation of semiconductors. Other chapters consider the electronic circuit ar

  15. High-Power Plasma Switch for 11.4 GHz Microwave Pulse Compressor

    Hirshfield, Jay L.

    2010-01-01

    Results obtained in several experiments on active RF pulse compression at X-band using a magnicon as the high-power RF source are presented. In these experiments, microwave energy was stored in high-Q TE01 and TE02 modes of two parallel-fed resonators, and then discharged using switches activated with rapidly fired plasma discharge tubes. Designs and high-power tests of several versions of the compressor are described. In these experiments, coherent pulse superposition was demonstrated at a 5-9 MW level of incident power. The compressed pulses observed had powers of 50-70 MW and durations of 40-70 ns. Peak power gains were measured to be in the range of 7:1-11:1 with efficiency in the range of 50-63%.

  16. High powered pulsed plasma enhanced deposition of thin film semiconductor and optical materials

    Llewellyn, I.P.; Sheach, K.J.A.; Heinecke, R.A.

    1993-01-01

    A glow discharge deposition technique is described which allows the deposition of a large range of high quality materials without the requirement for substrate heating. The method is differentiated from conventional plasma deposition techniques in that a much higher degree of dissociation is achieved in the gases prior to deposition, such that thermally activated surface reactions are no longer required in order to produce a dense film. The necessary discharge intensity (>300Wcm -3 ) is achieved using a high power radio frequency generator which is pulsed at a low duty cycle (1%) to keep the average energy of the discharge low (100W), in order to avoid the discharge heating the substrate. In addition, by varying the gas composition between discharge pulses, layered structures of materials can be produced, with a disordered interface about 8 A thick. Various uses of the technique in semiconductor and optical filter production are described, and the properties of films deposited using these technique are presented. (orig.)

  17. Sol-gel process for the manufacture of high power switches

    Landingham, Richard L.; Satcher, Jr, Joe; Reibold, Robert

    2016-09-27

    According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is optically transparent, and where the nanopowder has a physical characteristic of formation from a sol-gel process. According to another embodiment, a method includes mixing a sol-gel precursor compound, a hydroxy benzene and an aldehyde in a solvent thereby creating a mixture, causing the mixture to gel thereby forming a wet gel, drying the wet gel to form a nanopowder, and applying a thermal treatment to form a SiC nanopowder.

  18. Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

    Tian, Liqiang; Shi, Wei; Feng, Qingqing

    2011-11-01

    A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

  19. Experimental study on the characteristics of semiconductor opening switch

    Su Jian Cang; Ding Yong Zhong; Song Zhi Min; Ding Zhen Jie; Liu Guo Zhi

    2002-01-01

    An experimental set-up is developed to measure the characteristics of semiconductor opening switch (SOS). The parameters, such as interruption impedance, current int eruption time, voltage gain, pulse duration and energy transfer efficiency, are studied experimentally. The experimental results show that forward pumping time and reverse pumping time are important parameters for semiconductor opening switches. The influences of forward pumping time and reverse pumping time on interruption time, voltage gain, and energy transfer efficiency are obtained. In the interruption process, the impedance variation is divided into three phases: that is rapid increasing phase, slow change phase and completely interruption phase

  20. Transmission line pulse system for avalanche characterization of high power semiconductor devices

    Riccio, Michele; Ascione, Giovanni; De Falco, Giuseppe; Maresca, Luca; De Laurentis, Martina; Irace, Andrea; Breglio, Giovanni

    2013-05-01

    Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different

  1. High Power Q-Switched Dual-End-Pumped Ho:YAG Laser

    Xiao-Ming, Duan; Ying-Jie, Shen; Tong-Yu, Dai; Bao-Quan, Yao; Wang Yue-Zhu, E-mail: xmduan@hit.edu.cn [National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001 (China)

    2012-09-15

    We report the high power acousto-optically Q-switched operation of a dual-end-pumped Ho:YAG laser at room temperature. For the Q-swithched mode, a maximum pulse energy of 2.4 mJ and a minimum pulse width of 23 ns at the repetition rate of 10 kHz are achieved, resulting in a peak power of 104.3 kW. The beam quality factor of M{sup 2} {approx} 1.5, which is demonstrated by a knife-edge method. In addition, the Ho:YAG laser is employed as a pumping source of ZGP optical parametric oscillator, and its total average output power is 13.2 W at 3.9 {mu}m and 4.4 {mu}m with a slope efficiency of 68.4%.

  2. Fully integrated Q-switch for commercial high-power resonator with solitary XLMA-fiber

    Lange, R.; Bachert, C.; Rehmann, G.; Weber, H.; Luxen, R.; Enns, H.; Schenk, M.; Hosdorf, S.; Marfels, S.; Bay, M.; Kösters, A.; Krause, V.; Giesberts, M.; Fitzau, O.; Hoffmann, H.-D.

    2018-02-01

    In surface processing applications the correlation of laser power to processing speed demands a further enhancement of the performance of short-pulsed laser sources with respect to the investment costs. The frequently applied concept of master oscillator power amplifier relies on a complex structure, parts of which are highly sensitive to back reflected amplified radiation. Aiming for a simpler, robust source using only a single ytterbium doped XLMA fiber in a q-switched resonator appears as promising design approach eliminating the need for subsequent amplification. This concept requires a high power-tolerant resonator which is provided by the multikilowatt laser platform of Laserline including directly water-cooled active fiber thermal management. Laserline GmbH and Fraunhofer Institute for Laser Technology joined their forces1 to upgrade standard high power laser sources for short-pulsed operation exceeding 1 kW of average power. Therefor a compact, modular qswitch has been developed. In this paper the implementation of a polarization independent q-switch into an off-the-shelf multi-kilowatt diodepumped continuous wave fiber source is shown. In this early step of implementation we demonstrated more than 1000 W of average power at pulse lengths below 50 ns FWHM and 7.5 mJ pulse energy. The M2 corresponds to 9.5. Reliability of the system is demonstrated based on measurements including temperature and stability records. We investigated the variation possibilities concerning pulse parameters and shape as well as upcoming challenges in power up-scaling.

  3. Current measurement method for characterization of fast switching power semiconductors with Silicon Steel Current Transformer

    Li, Helong; Beczkowski, Szymon; Munk-Nielsen, Stig

    2015-01-01

    This paper proposes a novel current measurement method with Silicon Steel Current Transformer (SSCT) for the characterization of fast switching power semiconductors. First, the existing current sensors for characterization of fast switching power semiconductors are experimentally evaluated...

  4. An Electron-Beam Controlled Semiconductor Switch

    1989-11-01

    of the Seventeenth Power Modulator Symposium, Seattle, WA, pp. 214-218. 1986. 21. Bovino , L., ’ioumans,R., Weiner, H., Burke, T . , "Optica lly... Bovino , R. Youmans, M. Weiner, and T. Burke, ’ ’Optically Co ntrolled Semiconducto r Switch for ~lulti-~legawatt Rep-Rated Pulse r s ," Conf. Record...p. 615. (II 1 W. N. Carr, IEEE Trans. Electron Devices, vol. ED-12, p. 531 , 1965. (121 T. Burke, M. Weiner. L. Bovino , and R. Youmans, in Proc

  5. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  6. Optical switching of nuclear spin-spin couplings in semiconductors.

    Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

    2011-07-05

    Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear-spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings.

  7. Optical switching of nuclear spin–spin couplings in semiconductors

    Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

    2011-01-01

    Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear–spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings. PMID:21730962

  8. Driver Circuit For High-Power MOSFET's

    Letzer, Kevin A.

    1991-01-01

    Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

  9. Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch

    Guo, Jiquan; Tantawi, Sami; /SLAC

    2007-01-10

    First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.

  10. ICC Experiment Performance Improvement through Advanced Feedback Controllers for High-Power Low-Cost Switching Power Amplifiers

    Nelson, Brian A.

    2006-01-01

    Limited resources force most smaller fusion energy research experiments to have little or no feedback control of their operational parameters, preventing achievement of their full operational potential. Recent breakthroughs in high-power switching technologies have greatly reduced feedback-controlled power supply costs, primarily those classified as switching power amplifiers. However, inexpensive and flexible controllers for these power supplies have not been developed. A uClinux-based micro-controller (Analog Devices Blackfin BF537) was identified as having the capabilities to form the base of a digital control system for switching power amplifiers. A control algorithm was created, and a Linux character device driver was written to realize the algorithm. The software and algorithm were successfully tested on a switching power amplifier and magnetic field coil using University of Washington (subcontractor) resources

  11. High-power continuous wave and passively Q-switched laser operations of a Nd:GGG crystal

    Qin, L J; Tang, D Y; Xie, G Q; Dong, C M; Jia, Z T; Tao, X T

    2008-01-01

    We report on the continuous wave (CW) and passive Q-switching performance of a high-power diode-pumped Nd:GGG laser. A CW output power of 7.20 W was obtained under an absorbed pump power of 14.97 W, which gives a slop efficiency of 52.7%. With a Cr 4+ doped yttrium aluminum garnet crystal as the saturable absorber, the shortest passively Q-switched pulse width, largest pulse energy, and highest peak power achieved were 7.7 ns, 126.25 μJ, and 15.5 kW, respectively

  12. High power diode-pumped continuous wave and Q-switch operation of Tm,Ho:YVO4 laser

    Yao, B Q; Li, G; Meng, P B; Zhu, G L; Ju, Y L; Wang, Y Z

    2010-01-01

    High power diode-pumped continuous wave (CW) and Q-switch operation of Tm,Ho:YVO 4 laser is reported. Using two Tm,Ho:YVO 4 rods in a single cavity, up to 20.2 W of CW output lasing at 2054.7 nm was obtained under cryogenic temperature of 77 K with an optical to optical conversion efficiency of 32.9%. For Q-switch operation, up to 19.4 W of output was obtained under 15 kHz pulse repetition frequency (PRF) with a minimum pulse width of 24.2 ns. In addition, different pulse repetition frequencies of Q-switch operation with 10.0 kHz, 12.5 kHz and 15.0 kHz were investigated comparatively

  13. Q-Switched High Power Single Frequency 2 Micron Fiber Laser, Phase I

    National Aeronautics and Space Administration — Accurate measurement of atmospheric parameters with high resolution needs advanced lasers. In this SBIR program we propose to develop innovative Q-switched high...

  14. Semiconductor laser engineering, reliability and diagnostics a practical approach to high power and single mode devices

    Epperlein, Peter W

    2013-01-01

    This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performa...

  15. High-order diffraction gratings for high-power semiconductor lasers

    Vasil’eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N.; Shashkin, I. S.; Tarasov, I. S.

    2012-01-01

    A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating ∼2 μm deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al 0.3 Ga 0.7 As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

  16. Design of a high-power Nd:YAG Q-switched laser cavity

    Singh, Ikbal; Kumar, Avinash; Nijhawan, O. P.

    1995-06-01

    An electro-optically Q-switched Nd:YAG laser resonator that uses two end prisms placed orthogonally perpendicular to each other has been designed. This configuration improves the stability of the resonator and does not alter the characteristics of the electro-optical Q switch. The outcoupling ratio of the cavity is optimized by a change in the azimuthal angle of a phase-matched Porro prism placed at one end of the cavity. The prism placed at the other end of the cavity is designed so that it introduces a phase change of Pi , regardless of its orientation and index of refraction, resulting in a more efficient and stable cavity.

  17. Switching transients in high-frequency high-power converters using power MOSFET's

    Sloane, T. H.; Owen, H. A., Jr.; Wilson, T. G.

    1979-01-01

    The use of MOSFETs in a high-frequency high-power dc-to-dc converter is investigated. Consideration is given to the phenomena associated with the paralleling of MOSFETs and to the effect of stray circuit inductances on the converter circuit performance. Analytical relationships between various time constants during the turning-on and turning-off intervals are derived which provide estimates of plateau and peak levels during these intervals.

  18. Phase shift PWM with double two-switch bridge for high power capacitor charging

    Karandikar, U.S.; Singh, Yashpal; Thakurta, A.C.

    2013-01-01

    Pulse power supply systems working at higher voltage and high repetition rate demands for higher power from capacitor chargers. Capacitor charging requirement become more challenging in such cases. In pulse power circuits, energy storage capacitor should be charged to its desired voltage before the next switching occurs. It is discharged within a small time, delivering large pulse power. A capacitor charger has to work with wide load variation repeatedly. Many schemes are used for this purpose. The proposed scheme aims at reducing stresses on switches by reducing peak current and their evils. A high voltage power supply is designed for capacitor charging. The proposed scheme is based on a Phase-Shifted PWM without using any extra component to achieve soft switching. Indirect constant average current capacitor charging is achieved with a simple control scheme. A double two-switch bridge is proposed to enhance reliability. Power supply has been developed to charge a capacitor of 50 μF to 2.5 kV at 25 Hz. (author)

  19. A high power gain switched diode laser oscillator and amplifier for the CEBAF polarized electron injector

    Poelker, M.; Hansknecht, J.

    1996-01-01

    The photocathode in the polarized electron source at Jefferson Lab is illuminated with pulsed laser light from a gain switched diode laser and diode optical amplifier. Laser pulse repetition rates up to 2,000 MHz, optical pulsewidths between 31 and 123 ps, and average power > 100 mW are demonstrated. The laser system is highly reliable and completely remotely controlled

  20. Role of advanced RF/microwave technology and high power switch technology for developing/upgrading compact/existing accelerators

    Shrivastava, Purushottam

    2001-01-01

    With the advances in high power microwave devices as well as in microwave technologies it has become possible to go on higher frequencies at higher powers as well as to go for newer devices which are more efficient and compact and hence reducing the power needs as well as space and weight requirement for accelerators. New devices are now available in higher frequency spectrum for example at C-Band, X-band and even higher. Also new devices like klystrodes/Higher Order Mode Inductive Output Tubes (HOM IOTs) are now becoming competitors for existing tubes which are in use at present accelerator complexes. The design/planning of the accelerators used for particle physics research, medical accelerators, industrial irradiation, or even upcoming Driver Accelerators for Sub Critical Reactors for nuclear power generation are being done taking into account the newer technologies. The accelerators which use magnetrons, klystrons and similar devices at S-Band can be modified/redesigned with devices at higher frequencies like X-Band. Pulsed accelerators need high power high voltage pulsed modulators whereas CW accelerators need high voltage power supplies for functioning of RF / Microwave tubes. There had been a remarkable growth in the development and availability of solid state switches both for switching the pulsed modulators for microwave tubes as well as for making high frequency switch mode power supplies. Present paper discusses some of the advanced devices/technologies in this field as well as their capability to make advanced/compact/reliable accelerators. Microwave systems developed/under development at Centre for Advanced Technology are also discussed briefly along with some of the efforts done to make them compact. An overview of state of art vacuum tube devices and solid state switch technologies is given. (author)

  1. Operation of a semiconductor opening switch at ultrahigh current densities

    Lyubutin, S. K.; Rukin, S. N.; Slovikovsky, B. G.; Tsyranov, S. N.

    2012-01-01

    The operation of a semiconductor opening switch (SOS diode) at cutoff current densities of tens of kA/cm 2 is studied. In experiments, the maximum reverse current density reached 43 kA/cm 2 for ∼40 ns. Experimental data on SOS diodes with a p + -p-n-n + structure and a p-n junction depth from 145 to 180 μm are presented. The dynamics of electron-hole plasma in the diode at pumping and current cutoff stages is studied by numerical simulation methods. It is shown that current cutoff is associated with the formation of an electric field region in a thin (∼45 μm) layer of the structure’s heavily doped p-region, in which the acceptor concentration exceeds 10 16 cm −3 , and the current cutoff process depends weakly on the p-n junction depth.

  2. High voltage, high power operation of the plasma erosion opening switch

    Neri, J.M.; Boller, J.R.; Ottinger, P.F.; Weber, B.V.; Young, F.C.

    1987-01-01

    A Plasma Erosion Opening Switch (PEOS) is used as the opening switch for a vacuum inductive storage system driven by a 1.8-MV, 1.6-TW pulsed power generator. A 135-nH vacuum inductor is current charged to ∼750 kA in 50 ns through the closed PEOS which then opens in <10 ns into an inverse ion diode load. Electrical diagnostics and nuclear activations from ions accelerated in the diode yield a peak load voltage (4.25 MV) and peak load power (2.8 TW) that are 2.4 and 1.8 times greater than ideal matched load values for the same generator pulse

  3. Plasma-pulse formation and acceleration for fast high-power technology and switching applications

    Doucet, H.J.; Jones, W.D.; Moustaizis, S.; Lamain, H.; Rouille, C.

    1985-01-01

    A carbon plasma gun powered by a low-inductance capacitor bank and transmission line is used to produce μsec-length pulses of protons having densities of 10/sup 12/-10/sup 14/ cm/sup -3/ at distances of 0.3-1.5 m from the gun and velocities of 10-20 cm/μs. Essential features are a low-inductance surface switch and a nonlinear transmission grid

  4. Three-Phase High-Power and Zero-Current-Switching OBC for Plug-In Electric Vehicles

    Cheng-Shan Wang

    2015-06-01

    Full Text Available In this paper, an interleaved high-power zero-current-switching (ZCS onboard charger (OBC based on the three-phase single-switch buck rectifier is proposed for application to plug-in electric vehicles (EVs. The multi-resonant structure is used to achieve high efficiency and high power density, which are necessary to reduce the volume and weight of the OBC. This study focuses on the border conditions of ZCS converting with a battery load, which means the variation ranges of the output voltage and current are very large. Furthermore, a novel hybrid control method combining pulse frequency modulation (PFM and pulse width modulation (PWM together is presented to ensure a driving frequency higher than 10 kHz, and this will reduce the unexpected inner resonant power flow and decrease the total harmonic distortion (THD of the input current under a light load at the end of the charging process. Finally, a prototype is established, and experiments are carried out. According to the experimental results, the conversion efficiency is higher than 93.5%, the THD about 4.3% and power factor (PF 0.98 under the maximum power output condition. Besides, a three-stage charging process is also carried out the experimental platform.

  5. Design of the Trap Filter for the High Power Converters with Parallel Interleaved VSCs

    Gohil, Ghanshyamsinh Vijaysinh; Bede, Lorand; Teodorescu, Remus

    2014-01-01

    The power handling capability of the state-of-the-art semiconductor devices is limited. Therefore, the Voltage Source Converters (VSCs) are often connected in parallel to realize high power converter. The switching frequency semiconductor devices, used in the high power VSCs, is also limited...

  6. Investigation of the resistive phase in high power gas switching. Research and development report

    O'Rourke, R.C.

    1977-01-01

    A theoretical study was made of the resistive phase in high pressure gas switching with the regime of interest being (10 to 50) kV from (1J, 10ns, 100KHz) to (100J, 10μs, 1KHz). The resistive phase was examined as a function of applied field, gap spacing, inductance, gas type and pressure, and electrode material. The initiating and quenching phases as regards system performance (e.g., the jitter problem) were examined. The cooling and electrode debris removal effects of the vortex gas flow on the operating characteristics of the system were considered

  7. Spectrographic temperature measurement of a high power breakdown arc in a high pressure gas switch

    Yeckel, Christopher; Curry, Randy [Department of Computer and Electrical Engineering, Center for Physical and Power Electronics, University of Missouri--Columbia, Columbia, Missouri 65211 (United States)

    2011-09-15

    A procedure for obtaining an approximate temperature value of conducting plasma generated during self-break closure of a RIMFIRE gas switch is described. The plasma is in the form of a breakdown arc which conducts approximately 12 kJ of energy in 1 {mu}s. A spectrographic analysis of the trigger-section of the 6-MV RIMFIRE laser triggered gas switch used in Sandia National Laboratory's ''Z-Machine'' has been made. It is assumed that the breakdown plasma has sufficiently approached local thermodynamic equilibrium allowing a black-body temperature model to be applied. This model allows the plasma temperature and radiated power to be approximated. The gas dielectric used in these tests was pressurized SF{sub 6}. The electrode gap is set at 4.59 cm for each test. The electrode material is stainless steel and insulator material is poly(methyl methacrylate). A spectrum range from 220 to 550 nanometers has been observed and calibrated using two spectral irradiance lamps and three spectrograph gratings. The approximate plasma temperature is reported.

  8. Experimental research on the overvoltage protection of high-power thyristor switch

    Chang Lei; Yang Jianhua; Liu Lie

    2010-01-01

    The influence of resistance-capacitance absorption circuit and static equalizing resistance to thyristor switching performance is investigated, regarding both one single thyristor and two serial thyristors. A conclusion that the higher charging voltage the higher peak value of forward current, reverse current and rising rate has been achieved. To one single thyristor, the resistance-capacitance absorption circuit makes the peak value and rising rate of forward and reverse currents much higher, but lower pulse width; different resistance values (2,10) of resistance-capacitance absorption circuit make no sense to the amplitude and rising rate of forward current, and the pulse width of reverse current. However, the higher the resistance value the lower the amplitude of reverse current, which leads to a lower current rising rate. To the two serial thyristors, the current amplitudes are not precisely half that of one single thyristor, and the forward current is a little higher while the reverse one is obviously lower; the rising time of forward and reverse currents is shortened, especially for the reverse current which is only 1/5 of one single thyristor. Notably, the capacitance impact of thyristor should not be ignored. (authors)

  9. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

    2014-01-01

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  10. A High Power Linear Solid State Pulser

    Boris Yen; Brent Davis; Rex Booth

    1999-01-01

    Particle Accelerators require high voltage and often high power. Typically the high voltage/power generation utilizes a topology with an extra energy store and a switching means to extract that stored energy. The switches may be active or passive devices. Active switches are hard or soft vacuum tubes, or semiconductors. When required voltages exceed tens of kilovolts, numerous semiconductors are stacked to withstand that potential. Such topologies can use large numbers of critical parts that, when in series, compromise the system reliability and performance. This paper describes a modular, linear, solid state amplifier which uses a parallel array of semiconductors, coupled with transmission line transformers. Such a design can provide output signals with voltages exceeding 10kV (into 50-ohms), and with rise and fall times (10-90 % amplitude) that are less than 1--ns. This compact solid state amplifier is modular, and has both hot-swap and soft fail capabilities

  11. Chemical switches and logic gates based on surface modified semiconductors

    Konrad, Szacilowski; Wojciech, Macyk [Jagiellonian Univ., Dept. of Chemistry, Krakow (Poland)

    2006-02-15

    Photoelectrochemical properties of multicomponent photo-electrodes based on titanium dioxide and cadmium sulfide powders modified with hexacyanoferrate complexes have been examined. Photocurrent responses were recorded as functions of applied potential and photon energy. Surprisingly, the photocurrent can be switched between positive and negative values as a result of potential or photon energy changes. This new effect called Photo Electrochemical Photocurrent Switching (PEPS) opens a possibility of new chemical switches and logic gates construction. Boolean logic analysis and a tentative mechanism of the device are discussed. (authors)

  12. Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

    Koryazhkina, M. N.; Tikhov, S. V.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Antonov, I. N.; Karzanov, V. V.; Gorshkov, O. N.; Tetelbaum, D. I.; Karakolis, P.; Dimitrakis, P.

    2018-03-01

    Bipolar resistive switching in metal-insulator-semiconductor (MIS) capacitor-like structures with an inert Au top electrode and a Si3N4 insulator nanolayer (6 nm thick) has been observed. The effect of a highly doped n +-Si substrate and a SiO2 interlayer (2 nm) is revealed in the changes in the semiconductor space charge region and small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of the semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.

  13. Multi-Valued Spin Switch in a Semiconductor Microcavity

    Paraïso, T. K.; Wouters, M.; Léger, Y.; Morier-Genoud, F.; Deveaudhyphen; Plédran, B.

    2011-12-01

    In this work, we report on the first realization of multi-valued spin switching in the solid-state. We investigate the physics of spinor bistability with microcavity polaritons in a trap. Spinor interactions lead to special bistability regimes with decoupled thresholds for spin-up and spin-down polaritons. This allows us to establish state-of-the-art spin switching operations. We evidence polarization hysteresis and determine appropriate conditions to achieve spin multistability. For a given excitation condition, three stable spin states coexist for the system. These results open new pathways for the development of innovative spin-based logic gates and memory devices.

  14. Blue 450nm high power semiconductor continuous wave laser bars exceeding rollover output power of 80W

    König, H.; Lell, A.; Stojetz, B.; Ali, M.; Eichler, C.; Peter, M.; Löffler, A.; Strauss, U.; Baumann, M.; Balck, A.; Malchus, J.; Krause, V.

    2018-02-01

    Industrial material processing like cutting or welding of metals is rather energy efficient using direct diode or diode pumped solid state lasers. However, many applications cannot be addressed by established infrared laser technology due to fundamental material properties of the workpiece: For example materials like copper or gold have too low absorption in the near infrared wavelength range to be processed efficiently by use of existing high power laser systems. The huge interest to enable high power kW systems with more suitable wavelengths in the blue spectral range triggered the German funded research project 'BLAULAS': Therein the feasibility and capability of CW operating high power laser bars based on the GaN material system was investigated by Osram and Laserline. High performance bars were enabled by defeating fundamental challenges like material quality as well as the chip processes, both of which differ significantly from well-known IR laser bars. The research samples were assembled on actively cooled heat sinks with hard solder technology. For the first time an output power of 98W per bar at 60A drive current was achieved. Conversion efficiency as high as 46% at 50W output power was demonstrated.

  15. Characterization of a High-Power, High-Frequency, Soft-Switching Power Converter for EMC Considerations

    Li, S

    2001-01-01

    This report presents the setup, experimental techniques, and results of the radiated emissions tests on the PCM-3 soft-switching power converter using the Gigahertz Transverse Electromagnetic (GTEM) facility...

  16. Moving Reflector Type Micro Optical Switch for High-Power Transfer in a MEMS-Based Safety and Arming System

    Cochran, Kevin R; Fan, Lawrence; Voe, Don L

    2003-01-01

    ...) system for use in underwater weapons. In this switch, an etched vertical sidewall reflector is electrostatically actuated in and out of the optical path between input and output optical fibers...

  17. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  18. Outlook for the use of microsecond plasma opening switches to generate high-power nanosecond current pulses

    Dolgachev, G.I.; Maslennikov, D.D.; Ushakov, A.G.

    2006-01-01

    Paper deals with a phenomenon of current breaking in a conducting plasma volume of plasma opening switchers with a nanosecond time of energy initiation and their application in high-power generators. One determined the conditions to ensure megavolt voltages under the erosion mode making use of external applied magnetic field to ensure magnetic insulation of gap of plasma opening switchers. One studied the peculiar features of application of plasma opening switchers under 5-6 MV voltages to ensure X-ray and gamma-radiation pulses [ru

  19. ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers

    Bao, Xumin; Liu, Yuejun; Weng, Guoen; Hu, Xiaobo; Chen, Shaoqiang

    2018-01-01

    The gain-switching dynamics of low-dimensional semiconductor lasers is simulated numerically by using a two-dimensional rate-equation model. Use is also made of the ABC model, where the carrier recombination rate is described by a function of carrier densities including Shockley - Read - Hall (SRH) recombination coefficient A, spontaneous emission coefficient B and Auger recombination coefficient C. Effects of the ABC parameters on the ultrafast gain-switched pulse characteristics with high-density pulse excitation are analysed. It is found that while the parameter A has almost no obvious effects, the parameters B and C have distinctly different effects: B influences significantly the delay time of the gain-switched pulse, while C affects mainly the pulse intensity.

  20. Computational and experimental progress on laser-activated gas avalanche switches for broadband, high-power electromagnetic pulse generation

    Mayhall, D.J.; Yee, J.H.; Villa, F.

    1991-01-01

    This paper discusses the gas avalanche switch, a high-voltage, picosecond-speed switch, which has been proposed. The basic switch consists of pulse-charged electrodes, immersed in a high-pressure gas. An avalanche discharge is induced in the gas between the electrodes by ionization from a picosecond-scale laser pulse. The avalanching electrons move toward the anode, causing the applied voltage to collapse in picoseconds. This voltage collapse, if rapid enough, generates electromagnetic waves. A two-dimensional (2D), finite difference computer code solves Maxwell's equations for transverse magnetic modes for rectilinear electrodes between parallel plate conductors, along with electron conservation equations for continuity, momentum, and energy. Collision frequencies for ionization and momentum and energy transfer to neutral molecules are assumed to scale linearly with neutral pressure. Electrode charging and laser-driven electron deposition are assumed to be instantaneous. Code calculations are done for a pulse generator geometry, consisting of an 0.7 mm wide by 0.8 mm high, beveled, rectangular center electrode between grounded parallel plates at 2 mm spacing in air

  1. Modeling of Semiconductor Optical Amplifier Gain Characteristics for Amplification and Switching

    Mahad, Farah Diana; Sahmah, Abu; Supa'at, M.; Idrus, Sevia Mahdaliza; Forsyth, David

    2011-05-01

    The Semiconductor Optical Amplifier (SOA) is presently commonly used as a booster or pre-amplifier in some communication networks. However, SOAs are also a strong candidate for utilization as multi-functional elements in future all-optical switching, regeneration and also wavelength conversion schemes. With this in mind, the purpose of this paper is to simulate the performance of the SOA for improved amplification and switching functions. The SOA is modeled and simulated using OptSim software. In order to verify the simulated results, a MATLAB mathematical model is also used to aid the design of the SOA. Using the model, the gain difference between simulated and mathematical results in the unsaturated region is <1dB. The mathematical analysis is in good agreement with the simulation result, with only a small offset due to inherent software limitations in matching the gain dynamics of the SOA.

  2. Experimental and theoretical investigation of semiconductor optical amplifier (SOA) based all-optical switches

    Nielsen, Mads Lønstrup

    2004-01-01

    This thesis analyzes semiconductor optical amplifier (SOA) based all-optical switches experimentally and through numerical simulations. These devices are candidates for optical signal processing functionalities such as wavelength conversion, regeneration, and logic processing in future transparent......, consisting of an SOA and an asymmetric MZI filter, is analyzed in the small-signal regime, and the obtainable modulation bandwidth is expressed analytically. A new optical spectrum approach to small signal analysis is introduced, and is used to assess the bandwidth enhancing effect of different optical...... filters, as well the impact of the filter phase response. Experiments at 40 Gb/s verify the predictions of the small-signal analysis. Wavelength conversion is demonstrated experimentally at 40 Gb/s using a simple filtering-assisted scheme with an ultra-low optical switching energy, and up to 80 Gb...

  3. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li [Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, P.O. Box 919-108, Mianyang 621900 (China)

    2014-09-15

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ∼40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  4. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches.

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-01

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ~40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  5. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

    2012-01-01

    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  6. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    Schwarze, G.E.; Frasca, A.J.

    1994-01-01

    The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10 13 n/cm 2 and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed

  7. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  8. Semiconductor

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  9. Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

    Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)

    2010-04-15

    The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    Rantamäki, Antti; Lyytikäinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G

    2011-01-01

    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  11. Nitride semiconductor devices fundamentals and applications

    Morkoç, Hadis

    2013-01-01

    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  12. Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

    Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

    2018-02-01

    We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

  13. Study of all optical switching behaviour in semiconductor microresonator with nano-active layer

    Kheradmand, R; Aryan, H

    2010-01-01

    In this paper the behaviour of carriers in spontaneous patterns formation and patterns switching has been studied. Results demonstrate that with increasing length of cavity the range of required input field amplitude for patterns formation increased slightly and also the minimum perturbation coefficient for switching decreased greatly. Increasing nonradiative recombination rate of carriers about ten percent appeared that required input field amplitude for patterns formation raised more than before, albeit the minimum perturbation coefficient for switching and switching and switching time dose not vary considerably.

  14. Study of all optical switching behaviour in semiconductor microresonator with nano-active layer

    Kheradmand, R; Aryan, H, E-mail: r_kheradmand@tabrizu.ac.i, E-mail: aryan86@ms.tabrizu.ac.i [Photonics Group, Research Institute for Applied Physics and Astronomy, Tabriz University, Tabriz (Iran, Islamic Republic of)

    2010-11-01

    In this paper the behaviour of carriers in spontaneous patterns formation and patterns switching has been studied. Results demonstrate that with increasing length of cavity the range of required input field amplitude for patterns formation increased slightly and also the minimum perturbation coefficient for switching decreased greatly. Increasing nonradiative recombination rate of carriers about ten percent appeared that required input field amplitude for patterns formation raised more than before, albeit the minimum perturbation coefficient for switching and switching and switching time dose not vary considerably.

  15. Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch

    Ma Xiangrong; Shi Wei; Xiang Mei

    2013-01-01

    Experiments with the limited space-charge accumulation (LSA) mode of oscillation in a large gap semi-insulating (SI) GaAs photoconductive semiconductor switch (PCSS) are discussed. It has been observed that growth and drift of a photo-activated charge domain (PACD) are quenched only when the bias voltage is more than twice the threshold voltage. The original negative resistance characteristics are directly utilized in the LSA mode; during LSA operation the spatial average of the electric field varies over a large portion of the negative differential mobility region of the velocity—electric field characteristic. The work efficiency of an SI GaAs PCSS is remarkably enhanced by electric field excursions into the positive resistance region when the total electric field is only below the threshold part of the time. The LSA mode can only operate in the certain conditions that satisfy the quenching of the accumulation layer and the smaller initial domain voltage. (semiconductor devices)

  16. Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

    Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

    2015-01-01

    Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10 17  m −2 . We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching

  17. Testing and Implementation Progress on the Advanced Photon Source (APS) Linear Accelerator (Linac) High-Power S-band Switching System

    Grelick, A. E.; Arnold, N.; Berg, S.; Dohan, D.; Goeppner, G.; Kang, Y. W.; Nassiri, A.; Pasky, S.; Pile, G.; Smith, T.; Stein, S. J.

    2000-01-01

    An S-band linear accelerator is the source of particles and the front end of the Advanced Photon Source injector. In addition, it supports a low-energy undulator test line (LEUTL) and drives a free-electron laser (FEL). A waveguide-switching and distribution system is now under construction. The system configuration was revised to be consistent with the recent change to electron-only operation. There are now six modulator-klystron subsystems, two of which are being configured to act as hot sp...

  18. Tunable Injection Barrier in Organic Resistive Switches Based on Phase-Separated Ferroelectric-Semiconductor Blends

    Asadi, Kamal; de Boer, Tom G.; Blom, Paul W. M.; de Leeuw, Dago M.

    2009-01-01

    Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising

  19. Ultrawideband pulse generation based on overshooting effect in gain-switched semiconductor laser

    Torres-Company, V.; Prince, Kamau; Tafur Monroy, Idelfonso

    2008-01-01

    We demonstrate an alternative procedure to achieve ultrawideband (UWB) radio-frequency (RF) doublet impulses. It is based on the overshooting effect appearing by biasing a semiconductor laser close to the threshold with a large-amplitude signal. Specifically, with an optical bandpass filter...... a reliable, easy, and low-cost alternative for RF UWB impulse generation....

  20. Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends

    Asadi, K.; Boer, T.G. de; Blom, P.W.M.; Leeuw, D.M. de

    2009-01-01

    Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising

  1. Broadband generation by multiple four-wave mixing process due to ASE Q-switching in high-power double-clad ytterbium-doped fiber amplifier

    Chowdhury, Sourav D.; Shekhar, Nishant; Saha, Maitreyee; Sen, Ranjan; Pal, Mrinmay

    2014-11-01

    Broadband output from 1060nm to 1700nm and cascaded four-wave mixing generated red light pulsing is observed in a fiber amplifier set up consisting of a 5.5m double clad, double D shaped Ytterbium doped fiber, a single clad passive fiber for excess pump absorption and a splitter, both with and without a CW seed. Self-pulsing occurs from ASE due to passive Q-switching by saturable absorption effect of the active fiber and also depends on splice loss. The pulses generate broadband output by multiple four-wave mixing process with maximum broadening efficiency near 1300nm which is the zero dispersion wavelength for silica fiber. Pulses traveling both in forward and backward direction have enough peak power and energy to damage splice points and fiber components. When seeded the self-pulsing and broadband generation is often suppressed but again generate at increased pump powers.

  2. Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor

    Rocha, P.R.F.; Gomes, H.L.; Kiazadeh, A.; Chen, Qian; Leeuw, de D.M.; Meskers, S.C.J.

    2011-01-01

    This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching

  3. High power semiconductor switches in the 12 kV, 50 kA pulse generator of the SPS beam dump kicker system

    Bonthond, J; Faure, P; Vossenberg, Eugène B

    2001-01-01

    Horizontal deflection of the beam in the dump kicker system of the CERN SPS accelerator is obtained with a series of fast pulsed magnets. The high current pulses of 50 kA per magnet are generated with capacitor discharge type generators which, combined with a resistive free-wheel diode circuit, deliver a critically damped half-sine current with a rise-time of 25 ms. Each generator consists of two 25 kA units, connected in parallel to a magnet via a low inductance transmission line.

  4. Tuning the resistive switching memory in a metal–ferroelectric–semiconductor capacitor by field effect structure

    Wang, S.Y., E-mail: shouyu.wang@yahoo.com [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Guo, F.; Wang, X. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Liu, W.F., E-mail: wfliu@tju.edu.cn [Department of Applied Physics, Faculty of Science, Tianjin University, Weijin Road, Nankai District, Tianjin 300072 (China); Gao, J., E-mail: jugao@hku.hk [Department of Physics, the University of Hong Kong, Pokfulam Road (Hong Kong)

    2015-11-30

    Highlights: • Bistable or tristable electrically conducting state is observed. • Coefficient can be tuned in situ by modulating carrier's density. • The RS effects may be of significance for multi-source controlled memory devices. - Abstract: Resistive switching (RS) effects based on a correlation between ferroelectric polarization and conductivity might become of particular interest for nonvolatile memory applications, because they are not subjected to the scaling restrictions. Here we report on RS behaviors modulated by a reversal of ferroelectric polarization in heterostructures comprising of a ferroelectric layer and a semiconducting manganite film. It is found that electrically conducting state is bistable or even tristable; and via the polarization flipping, a maximum resistive switching coefficient (R{sub max}/R{sub min}) is found to be larger than 3000 with bias of 6 V in Ag/BaTiO{sub 3}/La{sub 0.8}Ca{sub 0.2}MnO{sub 3} at room temperature. More importantly, employing field-effect structure with ferroelectric PMN-PT as substrate, we found that the resistive switching behaviors can be tuned in situ by modulating the concentration of carriers in the semiconducting manganite layer. Possible mechanisms are discussed on the basis of the interplay of bound ferroelectric charges, charged defects in ferroelectric layer and mobile carriers in manganite thin films. The giant RS effects observed here may be of significance for memory devices by combing electronic conduction with magnetic, spintronic, and optical functionalities.

  5. Final report task order number B239641 between the Regents of the University of California and Institute of Experimental Physics task 2: Switch development

    Galakhov, I.V.; Gruzin, I.A.; Gudov, S.N.; Kirillov, G.A.; Logutenko, S.L.; Murugov, V.M.; Osin, V.A.; Zolotovskii, V.I.

    1994-01-01

    The LLNL project of the pulsed power system for the National Ignition Facility requires a switch with the following operational parameters: peak current of 400 kA, the transferred charge of 150 C, operating voltage of 25 kV, and reliable operating life of 10,000 shots. A review of high-power switches is given with detailed studies on vacuum switches and semiconductor switches

  6. Final Report: High Power Semiconductor Laser Sources,

    1989-01-01

    Mittelstein, Yasuhiko Arakawa, ) Anders Larssonb) and Amnon Yariv California Institute of Technology, Pasadena, California 91 125~412 (Received 7 July...Electronics and Commu- nication Engineers of Japan. He is a member of the Institute of Electronics Yasuhiko Arakawa S󈨑-M󈨔) was born in Ai- and...Gain, Modulation Response, and Spectral Linewidth in AlGaAs Quantum Well Lasers YASUHIKO ARAKAWA. MEMBER, IEEE. AND AMNON YARIV. FELLOW. IEEE Abstract

  7. Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

    Ghosh, Kankat; Das, S.; Khiangte, K. R.; Choudhury, N.; Laha, Apurba

    2017-11-01

    We report structural and electrical properties of hexagonal Gd2O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as {{≤ft[ 0 0 0 1 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 0 0 0 1 \\right]}GaN} and {{≤ft[ 1 \\bar{1} 0 0 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 1 \\bar{1} 0 0 \\right]}GaN} . X-ray photoelectron measurements of the valence bands revealed that Gd2O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3Ga0.7N, respectively. Electrical measurements such as capacitance-voltage and leakage current characteristics further confirm that epi-Gd2O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.

  8. Automated System Tests High-Power MOSFET's

    Huston, Steven W.; Wendt, Isabel O.

    1994-01-01

    Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

  9. Over 8 W high peak power UV laser with a high power Q-switched Nd:YVO4 oscillator and the compact extra-cavity sum-frequency mixing

    Yan, X P; Liu, Q; Gong, M; Wang, D S; Fu, X

    2009-01-01

    A 8.2 W UV laser was reported with the compact extra-cavity sum-frequency mixing. The IR fundamental frequency source was a high power and high beam quality Q-switched Nd:YVO 4 oscillator. 38 W fundamental frequency laser at 1064 nm was obtained at the pulse repetition rate of 450 kHz with the beam quality factors of M 2 x = 1.27, M 2 y = 1.21. The type I and type II phase-matched LBO crystals were used as the extra-cavity frequency doubling and mixing crystals respectively. At 38 kHz, 8.2 W UV laser at 355 nm was achieved with the pulse duration of 8 ns corresponding to the pulse peak power as high as 27 kW, and the optical-optical conversion efficiency from IR to UV was 25.6%. The output characteristics of the IR and the harmonic generations varying with the pulse repetition rate were also investigated detailedly

  10. Investigations of quantum effect semiconductor devices: The tunnel switch diode and the velocity modulation transistor

    Daniel, Erik Stephen

    In this thesis we present the results of experimental and theoretical studies of two quantum effect devices--the Tunnel Switch Diode (TSD) and the Velocity Modulation Transistor (VMT). We show that TSD devices can be fabricated such that they behave (semi-quantitatively) as predicted by simple analytical models and more advanced drift-diffusion simulations. These devices possess characteristics, such as on-state currents which range over nearly five orders of magnitude, and on/off current ratios which are even larger, which may allow for a practical implementation of a very dense transistorless SRAM architecture and possibly other novel circuit designs. We demonstrate that many TSD properties can be explained by analogy to a thyristor. In particular, we show that the thin oxide layer in the TSD plays a critical role, and that this can be understood in terms of current injection through the oxide, analogous to transport through the "current limiting" layer in a thyristor. As this oxide layer can be subjected to extreme stress during device operation, we have studied the effect of this stress on device behavior. We demonstrate many significant stress-dependent effects, and identify structures and operation modes which minimize these effects. We propose an InAs/GaSb/AlSb VMT which may allow for larger conductance modulation and higher temperature operation than has been demonstrated in similar GaAs/AlAs structures. Fundamental differences in device operation in the two materials systems and unusual transport mechanisms in the InAs/GaSb/AlSb system are identified as a result of the band lineups in the two systems. Boltzmann transport simulations are developed and presented, allowing a qualitative description of the transport in the InAs/GaSb/AlSb structure. Band structure calculations are carried out, allowing for device design. While no working VMT devices were produced, this is believed to be due to processing and crystal growth problems. We present methods used to

  11. Very high plasma switches. Basic plasma physics and switch technology

    Doucet, H.J.; Roche, M.; Buzzi, J.M.

    1988-01-01

    A review of some high power switches recently developed for very high power technology is made with a special attention to the aspects of plasma physics involved in the mechanisms, which determine the limits of the possible switching parameters

  12. Active Snubber Circuit for High Power Inverter Leg

    Rasmussen, Tonny Wederberg; Johansen, Morten Holst

    2009-01-01

    Abstract— High power converters in the conventional 6 pulse configuration with 6 switching elements IGBTs (Insulated Gate Bipolar Transistor) are pushed to the limit of power. Especially the switching loss is high. This reduces the switching frequency due to cooling problems. Passive snubber circ...

  13. Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

    Wang, M.; Huang, Y. J.; Ruan, S. C.

    2018-04-01

    In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

  14. Exciter switch

    Mcpeak, W. L.

    1975-01-01

    A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

  15. Semi-conductor switches

    1981-01-01

    Methods are described of improving certain electrical characteristics of bidirectional thyristors by selective irradiation of the boundary region between current-carrying portions of the device. Irradiation, preferably by electrons but also by neutrons, gamma radiation or protons, causes carrier lifetime reducing lattice defects. (U.K.)

  16. High-power klystrons

    Siambis, John G.; True, Richard B.; Symons, R. S.

    1994-05-01

    Novel emerging applications in advanced linear collider accelerators, ionospheric and atmospheric sensing and modification and a wide spectrum of industrial processing applications, have resulted in microwave tube requirements that call for further development of high power klystrons in the range from S-band to X-band. In the present paper we review recent progress in high power klystron development and discuss some of the issues and scaling laws for successful design. We also discuss recent progress in electron guns with potential grading electrodes for high voltage with short and long pulse operation via computer simulations obtained from the code DEMEOS, as well as preliminary experimental results. We present designs for high power beam collectors.

  17. High power microwaves

    Benford, James; Schamiloglu, Edl

    2016-01-01

    Following in the footsteps of its popular predecessors, High Power Microwaves, Third Edition continues to provide a wide-angle, integrated view of the field of high power microwaves (HPMs). This third edition includes significant updates in every chapter as well as a new chapter on beamless systems that covers nonlinear transmission lines. Written by an experimentalist, a theorist, and an applied theorist, respectively, the book offers complementary perspectives on different source types. The authors address: * How HPM relates historically and technically to the conventional microwave field * The possible applications for HPM and the key criteria that HPM devices have to meet in order to be applied * How high power sources work, including their performance capabilities and limitations * The broad fundamental issues to be addressed in the future for a wide variety of source types The book is accessible to several audiences. Researchers currently in the field can widen their understanding of HPM. Present or pot...

  18. Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

    Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T; Song, A M

    2009-01-01

    In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

  19. Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

    Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T [Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain); Song, A M, E-mail: indy@usal.e [School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD (United Kingdom)

    2009-11-15

    In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

  20. Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

    Wang, Weiqi; Gao, Feng; Yang, Yongheng

    2018-01-01

    This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... as an all-SiC-switch converter in terms of high performance and high efficiency with reduced DC inductance. It provides a cost-effective solution to addressing the efficiency issue of conventional CSI systems. Simulations and experiments are performed to validate the effectiveness of the proposed H7 CSI...

  1. The Impact of Power Switching Devices on the Thermal Performance of a 10 MW Wind Power NPC Converter

    Ma, Ke; Blaabjerg, Frede

    2012-01-01

    Power semiconductor switching devices play an important role in the performance of high power wind energy generation systems. The state-of-the-art device choices in the wind power application as reported in the industry include IGBT modules, IGBT press-pack and IGCT press-pack. Because...

  2. Wide Bandgap Extrinsic Photoconductive Switches

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  3. Mid-infrared Fe2+:ZnSe semiconductor saturable absorber mirror for passively Q-switched Er3+-doped ZBLAN fiber laser

    Shougui Ning

    2018-02-01

    Full Text Available A mid-infrared (mid-IR semiconductor saturable absorber mirror (SESAM based on Fe2+:ZnSe for passively Q-switched Er3+-doped ZBLAN fiber laser has been demonstrated. Fe2+:ZnSe SESAM was fabricated by electron beam evaporation method. Fe2+ was innovatively doped into the reflective Bragg stack, in which ZnSe layer served as both doped matrix and high refractive layer during the fabricating process. By using the Fe2+:ZnSe SESAM, stable passively Q-switched pulses with the minimum pulse width of 0.43 μs under a repetition rate of 160.82 kHz were obtained. The recorded maximum average output power of 873 mW with a peak power of 12.59 W and pulse energy of 5.43 μJ were achieved. The results demonstrated a new method for fabricating Fe2+:ZnSe SESAM, which can be used in compact mid-IR Q-switched fiber laser.

  4. High-power electronics

    Kapitsa, Petr Leonidovich

    1966-01-01

    High-Power Electronics, Volume 2 presents the electronic processes in devices of the magnetron type and electromagnetic oscillations in different systems. This book explores the problems of electronic energetics.Organized into 11 chapters, this volume begins with an overview of the motion of electrons in a flat model of the magnetron, taking into account the in-phase wave and the reverse wave. This text then examines the processes of transmission of electromagnetic waves of various polarization and the wave reflection from grids made of periodically distributed infinite metal conductors. Other

  5. High Power Vanadate lasers

    Strauss

    2006-07-01

    Full Text Available stream_source_info Strauss1_2006.pdf.txt stream_content_type text/plain stream_size 3151 Content-Encoding UTF-8 stream_name Strauss1_2006.pdf.txt Content-Type text/plain; charset=UTF-8 Laser Research Institute... University of Stellenbosch www.laser-research.co.za High Power Vanadate lasers H.J.Strauss, Dr. C. Bollig, R.C. Botha, Prof. H.M. von Bergmann, Dr. J.P. Burger Aims 1) To develop new techniques to mount laser crystals, 2) compare the lasing properties...

  6. High Power Factor Hybrid Rectifier | Odeh | Nigerian Journal of ...

    This paper presents the analysis of a new single-phase hybrid rectifier with high power factor (PF) and low harmonic distortion current. The proposed rectifier structure is composed of an ordinary single-phase diode rectifier with parallel connection of a switched converter. It is outlined that the switched converter is capable of ...

  7. High power coaxial ubitron

    Balkcum, Adam J.

    In the ubitron, also known as the free electron laser, high power coherent radiation is generated from the interaction of an undulating electron beam with an electromagnetic signal and a static periodic magnetic wiggler field. These devices have experimentally produced high power spanning the microwave to x-ray regimes. Potential applications range from microwave radar to the study of solid state material properties. In this dissertation, the efficient production of high power microwaves (HPM) is investigated for a ubitron employing a coaxial circuit and wiggler. Designs for the particular applications of an advanced high gradient linear accelerator driver and a directed energy source are presented. The coaxial ubitron is inherently suited for the production of HPM. It utilizes an annular electron beam to drive the low loss, RF breakdown resistant TE01 mode of a large coaxial circuit. The device's large cross-sectional area greatly reduces RF wall heat loading and the current density loading at the cathode required to produce the moderate energy (500 keV) but high current (1-10 kA) annular electron beam. Focusing and wiggling of the beam is achieved using coaxial annular periodic permanent magnet (PPM) stacks without a solenoidal guide magnetic field. This wiggler configuration is compact, efficient and can propagate the multi-kiloampere electron beams required for many HPM applications. The coaxial PPM ubitron in a traveling wave amplifier, cavity oscillator and klystron configuration is investigated using linear theory and simulation codes. A condition for the dc electron beam stability in the coaxial wiggler is derived and verified using the 2-1/2 dimensional particle-in-cell code, MAGIC. New linear theories for the cavity start-oscillation current and gain in a klystron are derived. A self-consistent nonlinear theory for the ubitron-TWT and a new nonlinear theory for the ubitron oscillator are presented. These form the basis for simulation codes which, along

  8. Electrical switching phenomenon and memory effect in the semiconductor chalcogenide glass Ge0.10 As0.20 Te0.70

    Haro, M.; Marquez, E.; Villares, P.; Jimenez-Garay, R.

    1987-01-01

    Electrical switching phenomenon, as well as the memory effect in the semiconductor chalcogenide glass Ge 0.10 As 0.20 Te 0.70 has been studied. A device with a plano-punctual interelectrode configuration has been designed and built, so that the electrical stimuli may be applied correctly. This device permits adequate positioning of the upper electrode, as well as contact pressure regulation. The I-V characteristics in the OFF-state have been obtained, showing a marked non-linear character. Equally, a relation has been found between the threshold voltage and electrical resistance parameters, indicating that the electrical power giving rise to the phenomenon is constant. Finally, memory effects showing a sudden reduction in electrical resistance, as well as interelectrode filaments, have been observed. (author)

  9. Study of Power Loss Reduction in SEPR Converters for Induction Heating through Implementation of SiC Based Semiconductor Switches

    Angel Marinov

    2014-08-01

    Full Text Available This paper presents a power loss analysis for a Single Ended Parallel Resonance (SEPR Converter used for induction heating. The analysis includes a comparison of the losses in the electronic switch when the circuit is realized using a conventional Silicon (Si based IGBT or when using Silicon Carbide (SiC based MOSFET. The analysis includes modelling and simulation as well as experimental verification through power loss and heat dissipation measurement. The presented results can be used as a base of comparison between the switches and can be a starting point for efficiency based design of those types of converters.

  10. Resonant High Power Combiners

    Langlois, Michel; Peillex-Delphe, Guy

    2005-01-01

    Particle accelerators need radio frequency sources. Above 300 MHz, the amplifiers mostly used high power klystrons developed for this sole purpose. As for military equipment, users are drawn to buy "off the shelf" components rather than dedicated devices. IOTs have replaced most klystrons in TV transmitters and find their way in particle accelerators. They are less bulky, easier to replace, more efficient at reduced power. They are also far less powerful. What is the benefit of very compact sources if huge 3 dB couplers are needed to combine the power? To alleviate this drawback, we investigated a resonant combiner, operating in TM010 mode, able to combine 3 to 5 IOTs. Our IOTs being able to deliver 80 kW C.W. apiece, combined power would reach 400 kW minus the minor insertion loss. Values for matching and insertion loss are given. The behavior of the system in case of IOT failure is analyzed.

  11. In-plane magnetic anisotropy and temperature dependence of switching field in (Ga, Mn) as ferromagnetic semiconductors.

    Kamara, S; Terki, F; Dumas, R; Dehbaoui, M; Sadowski, J; Galéra, R M; Tran, Q-H; Charar, S

    2012-06-01

    We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two regions of temperature. At T Tc/2 the "zigzag-shape" signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.

  12. Pseudospark switches

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  13. A Component-Minimized Single-Phase Active Power Decoupling Circuit with Reduced Current Stress to Semiconductor Switches

    Tang, Yi; Blaabjerg, Frede

    2015-01-01

    inductor. With such a configuration, this leg can control the current going into the two output capacitors connected in series for power decoupling, and the other leg can control the line current according to active and reactive power requirement. The proposed topology does not require additional passive...... component, e.g. inductors or film capacitors for ripple energy storage because this task can be accomplished by the dc-link capacitors, and therefore its implementation cost can be minimized. Another unique feature of the proposed topology is that the current stress of power semiconductors can be reduced...

  14. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    Semple, James

    2017-01-02

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  15. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    Semple, James; Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

    2017-01-01

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  16. IGBT Dynamic Loss Reduction through Device Level Soft Switching

    Lan Ma

    2018-05-01

    Full Text Available Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC turn-on and Zero Current Hard Voltage (ZCHV turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC inverter are given to validate the effectiveness of the device level hybrid soft switching method application.

  17. Lifetime laser damage performance of β-Ga2O3 for high power applications

    Jae-Hyuck Yoo

    2018-03-01

    Full Text Available Gallium oxide (Ga2O3 is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2. This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

  18. Lifetime laser damage performance of β -Ga2O3 for high power applications

    Yoo, Jae-Hyuck; Rafique, Subrina; Lange, Andrew; Zhao, Hongping; Elhadj, Selim

    2018-03-01

    Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

  19. Anomalous optical switching and thermal hysteresis during semiconductor-metal phase transition of VO2 films on Si substrate

    Leahu, G.; Li Voti, R.; Sibilia, C.; Bertolotti, M.

    2013-01-01

    We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO 2 ) film deposited on silicon wafer. The VO 2 phase transition is studied in the mid-infrared region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The reflectance has been measured in two configurations: from the side of the VO 2 film and from that of Si wafer. The results show a strong asymmetry between the emissivity in the two configurations, and the fact that the emissivity dynamic range from the silicon side is twice as large than that from the VO 2 side. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO 2 , which has been explained by applying the Maxwell Garnett effective medium approximation theory

  20. High-power planar dielectric waveguide lasers

    Shepherd, D.P.; Hettrick, S.J.; Li, C.; Mackenzie, J.I.; Beach, R.J.; Mitchell, S.C.; Meissner, H.E.

    2001-01-01

    The advantages and potential hazards of using a planar waveguide as the host in a high-power diode-pumped laser system are described. The techniques discussed include the use of proximity-coupled diodes, double-clad waveguides, unstable resonators, tapers, and integrated passive Q switches. Laser devices are described based on Yb 3+ -, Nd 3+ -, and Tm 3+ -doped YAG, and monolithic and highly compact waveguide lasers with outputs greater than 10 W are demonstrated. The prospects for scaling to the 100 W level and for further integration of devices for added functionality in a monolithic laser system are discussed. (author)

  1. High power, repetitive stacked Blumlein pulse generators

    Davanloo, F; Borovina, D L; Korioth, J L; Krause, R K; Collins, C B [Univ. of Texas at Dallas, Richardson, TX (United States). Center for Quantum Electronics; Agee, F J [US Air Force Phillips Lab., Kirtland AFB, NM (United States); Kingsley, L E [US Army CECOM, Ft. Monmouth, NJ (United States)

    1997-12-31

    The repetitive stacked Blumlein pulse power generators developed at the University of Texas at Dallas consist of several triaxial Blumleins stacked in series at one end. The lines are charged in parallel and synchronously commuted with a single switch at the other end. In this way, relatively low charging voltages are multiplied to give a high discharge voltage across an arbitrary load. Extensive characterization of these novel pulsers have been performed over the past few years. Results indicate that they are capable of producing high power waveforms with rise times and repetition rates in the range of 0.5-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap, or photoconductive switch. The progress in the development and use of stacked Blumlein pulse generators is reviewed. The technology and the characteristics of these novel pulsers driving flash x-ray diodes are discussed. (author). 4 figs., 5 refs.

  2. Microwave pulse generation by photoconductive switching

    Pocha, M.D.; Druce, R.L.

    1989-03-14

    Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories (1) the frozen wave generator or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200..mu..J optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency. 3 refs., 6 figs.

  3. Microwave pulse generation by photoconductive switching

    Pocha, M. D.; Druce, R. L.

    1989-03-01

    Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories: (1) the frozen wave generator, or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200 microJ optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency.

  4. A fully integrated, wide-load-range, high-power-conversion-efficiency switched capacitor DC-DC converter with adaptive bias comparator for ultra-low-power power management integrated circuit

    Asano, Hiroki; Hirose, Tetsuya; Kojima, Yuta; Kuroki, Nobutaka; Numa, Masahiro

    2018-04-01

    In this paper, we present a wide-load-range switched-capacitor DC-DC buck converter with an adaptive bias comparator for ultra-low-power power management integrated circuit. The proposed converter is based on a conventional one and modified to operate in a wide load range by developing a load current monitor used in an adaptive bias comparator. Measurement results demonstrated that our proposed converter generates a 1.0 V output voltage from a 3.0 V input voltage at a load of up to 100 µA, which is 20 times higher than that of the conventional one. The power conversion efficiency was higher than 60% in the load range from 0.8 to 100 µA.

  5. High-power actively Q-switched single-mode 1342 nm Nd:YVO4 ring laser, injection-locked by a cw single-frequency microchip laser.

    Koch, Peter; Bartschke, Juergen; L'huillier, Johannes A

    2015-11-30

    In this paper we report on the realization of a single-mode Q-switched Nd:YVO4 ring laser at 1342 nm. Unidirectional and single-mode operation of the ring laser is achieved by injection-locking with a continuous wave Nd:YVO4 microchip laser, emitting a single-frequency power of up to 40 mW. The ring laser provides a single-mode power of 13.9 W at 10 kHz pulse repetition frequency with a pulse duration of 18.2 ns and an excellent beam quality (M2 laser, a power of 8.7 W at 671 nm with a pulse duration of 14.8 ns and a beam propagation factor of M2 < 1.1 is obtained. The 671 nm radiation features a long-term spectral width of 75 MHz.

  6. High Power Orbit Transfer Vehicle

    Gulczinski, Frank

    2003-01-01

    ... from Virginia Tech University and Aerophysics, Inc. to examine propulsion requirements for a high-power orbit transfer vehicle using thin-film voltaic solar array technologies under development by the Space Vehicles Directorate (dubbed PowerSail...

  7. High-power VCSELs for smart munitions

    Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

    2006-08-01

    The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

  8. New switching processes using the integrated protections of power semi-conductors: application to the development of static converters with self-switching process; nouveaux mecanismes de commutation exploitant les protections integrees des semi-conducteurs de puissance: application a la conception de convertisseurs statiques a commutation automatique

    Roux, N.

    2004-07-15

    This thesis deals with a new switching process which integrates the semiconductor protection directly in the switching principle, in order to generate new static converters. It consists of a self-controlled transition which proceeds on a non-zero current or voltage level. 2 It can be associated with controlled or naturally switching processes making it possible to go from two to five change of state types of a switching cell. So, new elementary operation rules of a switching cell emerge. Considering the great number of possible switches, a synthesis methodology of cells with a source reversibility, whose switches are identical, is presented making it possible to reveal various solutions, of which two seem particularly interesting: the self-breaking inverter and rectifier cells, both using the self-breaking thyristor-dual. This last is used as study support of the self-breaking principle. Then, the manuscript concentrates on the study of converters, associations of elementary cells, revealing in particular the DC-current transformer and the reversible three-phase self-breaking rectifier. This last had been developed as an industrial prototype. Lastly, starting from the concept of a wind chain, our assembly has been compared with what is presently done as network converters, revealing lesser losses as well as a higher energetic efficiency. (author)

  9. New solid state opening switches for repetitive pulsed power technology

    Lyubutin, S K; Mesyats, G A; Rukin, S N; Slovikovskii, B G; Turov, A M [Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics

    1997-12-31

    In 1991 the authors discovered a semiconductor opening switch (SOS) effect that occurs in p{sup +}-p-n-n{sup +} silicon structures at a current density of up to 60 kA/cm{sup 2}. This effect was used to develop high-power semiconductor opening switches in intermediate inductive storage circuits. The breaking power of the opening switches was as high as 5 GW, the interrupted current being up to 45 kA, reverse voltage up to 1 MV and the current interruption time between 10 and 60 ns. The opening switches were assembled from quantity-produced Russian-made rectifying diodes type SDL with hard recovery characteristic. On the basis of experimental and theoretical investigations of the SOS effect, new SOS diodes were designed and manufactured by the Electrophysical Institute. The paper gives basic parameters of the SOS diodes. The new diodes offer higher values of interrupted current and shorter times of current interruption together with a considerable increase in the energy switching efficiency. The new SOS diodes were used to develop repetitive all-solid-state pulsed generators with an output voltage of up to 250 kV, pulse repetition rate up to 5 kHz, and pulse duration between 10 and 30 ns. (author). 2 tabs., 3 figs., 4 refs.

  10. Hybrid switch for resonant power converters

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  11. An improved soft switched PWM interleaved boost AC-DC converter

    Genc, Naci; Iskender, Ires

    2011-01-01

    In this paper, an improved soft switched two cell interleaved boost AC/DC converter with high power factor is proposed and investigated. A new auxiliary circuit is designed and added to two cell interleaved boost converter to reduce the switching losses. The proposed auxiliary circuit is implemented using only one auxiliary switch and a minimum number of passive components without an important increase in the cost and complexity of the converter. The main advantage of this auxiliary circuit is that it not only provides zero-voltage-transition (ZVT) for the main switches but also provides soft switching for the auxiliary switch and diodes. Though all semiconductor devices operate under soft switching, they do not have any additional voltage and current stresses. The proposed converter operates successfully in soft switching operation mode for a wide range of input voltage level and the load. In addition, it has advantages such as fewer structure complications, lower cost and ease of control. In the study, the transition modes for describing the behavior of the proposed converter in one switching period are described. A prototype with 600 W output power, 50 kHz/cell switching frequency, input line voltage of 110-220 V rms and an output voltage of 400 V dc has been implemented. Analysis, design and the control circuitry are also presented in the paper.

  12. High power klystrons for efficient reliable high power amplifiers

    Levin, M.

    1980-11-01

    This report covers the design of reliable high efficiency, high power klystrons which may be used in both existing and proposed troposcatter radio systems. High Power (10 kW) klystron designs were generated in C-band (4.4 GHz to 5.0 GHz), S-band (2.5 GHz to 2.7 GHz), and L-band or UHF frequencies (755 MHz to 985 MHz). The tubes were designed for power supply compatibility and use with a vapor/liquid phase heat exchanger. Four (4) S-band tubes were developed in the course of this program along with two (2) matching focusing solenoids and two (2) heat exchangers. These tubes use five (5) tuners with counters which are attached to the focusing solenoids. A reliability mathematical model of the tube and heat exchanger system was also generated.

  13. Autonomously managed high power systems

    Weeks, D.J.; Bechtel, R.T.

    1985-01-01

    The need for autonomous power management capabilities will increase as the power levels of spacecraft increase into the multi-100 kW range. The quantity of labor intensive ground and crew support consumed by the 9 kW Skylab cannot be afforded in support of a 75-300 kW Space Station or high power earth orbital and interplanetary spacecraft. Marshall Space Flight Center is managing a program to develop necessary technologies for high power system autonomous management. To date a reference electrical power system and automation approaches have been defined. A test facility for evaluation and verification of management algorithms and hardware has been designed with the first of the three power channel capability nearing completion

  14. Applications of high power microwaves

    Benford, J.; Swegle, J.

    1993-01-01

    The authors address a number of applications for HPM technology. There is a strong symbiotic relationship between a developing technology and its emerging applications. New technologies can generate new applications. Conversely, applications can demand development of new technological capability. High-power microwave generating systems come with size and weight penalties and problems associated with the x-radiation and collection of the electron beam. Acceptance of these difficulties requires the identification of a set of applications for which high-power operation is either demanded or results in significant improvements in peRFormance. The authors identify the following applications, and discuss their requirements and operational issues: (1) High-energy RF acceleration; (2) Atmospheric modification (both to produce artificial ionospheric mirrors for radio waves and to save the ozone layer); (3) Radar; (4) Electronic warfare; and (5) Laser pumping. In addition, they discuss several applications requiring high average power than border on HPM, power beaming and plasma heating

  15. Progress in semiconductor laser diodes: SPIE volume 723

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  16. Short Pulse Switches for Airborne High Power Supplies

    1973-10-01

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  17. High-power microwave diplexers for advanced ECRH systems

    Kasparek, W.; Petelin, M.; Erckmann, V.; Bruschi, A.; Noke, F.; Purps, F.; Hollmann, F.; Koshurinov, Y.; Lubyako, L.; Plaum, B.; Wubie, W.

    2009-01-01

    In electron cyclotron resonance heating systems, high-power multiplexers can be employed as power combiners, adjustable power dividers, fast switches to toggle the power between two launchers, as well as frequency sensitive directional couplers to combine heating and diagnostic applications on one launcher. In the paper, various diplexer designs for quasi-optical and corrugated waveguide transmission systems are discussed. Numerical calculations, low-power tests and especially high-power experiments performed at the ECRH system of W7-X are shown, which demonstrate the capability of these devices. Near term plans for applications on ASDEX Upgrade and FTU are presented. Based on the present results, options for implementation of power combiners and fast switches in the ECRH system of ITER is discussed.

  18. All-optical header recognizer for optical packet switched networks : exploiting nonlinear gain and index dynamics in semiconductor optical amplifiers for low power operation and photonic integration device

    Calabretta, N.; Dorren, H.J.S.

    2009-01-01

    The increase of the internet traffic leads to future optical networks requiring tens of Tb/s of capacity. Current electronic circuit switches are limited by the scalability of the electronic switching fabrics, power consumption and dissipation in the opto- electronic conversion. All-optical packet

  19. High-power pulsed lasers

    Holzrichter, J.F.

    1980-01-01

    The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization

  20. MCT/MOSFET Switch

    Rippel, Wally E.

    1990-01-01

    Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

  1. Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements

    Savenkov, G. G.; Kardo-Sysoev, A. F.; Zegrya, A. G.; Os'kin, I. A.; Bragin, V. A.; Zegrya, G. G.

    2017-10-01

    The first findings concerning the initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds via the electrical explosion of a semiconductor bridge are presented. The obtained results indicate that the energy parameters of an explosive conversion depend on the mass of a combustible agent—namely, nanoporous silicon—and the silicon-doping type.

  2. Intrinsic nanofilamentation in resistive switching

    Wu, Xing; Cha, Dong Kyu; Bosman, Michel; Raghavan, Nagarajan; Migas, Dmitri B.; Borisenko, Victor E.; Zhang, Xixiang; Li, Kun; Pey, Kin-Leong

    2013-01-01

    -chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission

  3. High brightness semiconductor lasers with reduced filamentation

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  4. Optics assembly for high power laser tools

    Fraze, Jason D.; Faircloth, Brian O.; Zediker, Mark S.

    2016-06-07

    There is provided a high power laser rotational optical assembly for use with, or in high power laser tools for performing high power laser operations. In particular, the optical assembly finds applications in performing high power laser operations on, and in, remote and difficult to access locations. The optical assembly has rotational seals and bearing configurations to avoid contamination of the laser beam path and optics.

  5. High Power High Efficiency Diode Laser Stack for Processing

    Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

    2018-03-01

    High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

  6. High power laser exciter accelerators

    Martin, T.H.

    1975-01-01

    Recent developments in untriggered oil and water switching now permit the construction of compact, high energy density pulsed power sources for laser excitation. These accelerators, developed principally for electron beam fusion studies, appear adaptable to laser excitation and will provide electron beams of 10 13 to 10 14 W in the next several years. The accelerators proposed for e-beam fusion essentially concentrate the available power from the outside edge of a disk into the central region where the electron beam is formed. One of the main problem areas, that of power flow at the vacuum diode insulator, is greatly alleviated by the multiplicity of electron beams that are allowable for laser excitation. A proposal is made whereby the disk-shaped pulsed power sections are stacked vertically to form a series of radially flowing electron beams to excite the laser gas volume. (auth)

  7. High power microwave source development

    Benford, James N.; Miller, Gabriel; Potter, Seth; Ashby, Steve; Smith, Richard R.

    1995-05-01

    The requirements of this project have been to: (1) improve and expand the sources available in the facility for testing purposes and (2) perform specific tasks under direction of the Defense Nuclear Agency about the applications of high power microwaves (HPM). In this project the HPM application was power beaming. The requirements of this program were met in the following way: (1) We demonstrated that a compact linear induction accelerator can drive HPM sources at repetition rates in excess of 100 HZ at peak microwave powers of a GW. This was done for the relativistic magnetron. Since the conclusion of this contract such specifications have also been demonstrated for the relativistic klystron under Ballistic Missile Defense Organization funding. (2) We demonstrated an L band relativistic magnetron. This device has been used both on our single pulse machines, CAMEL and CAMEL X, and the repetitive system CLIA. (3) We demonstrated that phase locking of sources together in large numbers is a feasible technology and showed the generation of multigigawatt S-band radiation in an array of relativistic magnetrons.

  8. Gate Drive For High Speed, High Power IGBTs

    Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C.; /SLAC

    2007-06-18

    A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3{micro}S with a rate of current rise of more than 10000A/{micro}S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.

  9. Gate Drive For High Speed, High Power IGBTs

    Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C.; SLAC

    2007-01-01

    A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3(micro)S with a rate of current rise of more than 10000A/(micro)S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt

  10. High Power Density Power Electronic Converters for Large Wind Turbines

    Senturk, Osman Selcuk

    . For these VSCs, high power density is required due to limited turbine nacelle space. Also, high reliability is required since maintenance cost of these remotely located wind turbines is quite high and these turbines operate under harsh operating conditions. In order to select a high power density and reliability......In large wind turbines (in MW and multi-MW ranges), which are extensively utilized in wind power plants, full-scale medium voltage (MV) multi-level (ML) voltage source converters (VSCs) are being more preferably employed nowadays for interfacing these wind turbines with electricity grids...... VSC solution for wind turbines, first, the VSC topology and the switch technology to be employed should be specified such that the highest possible power density and reliability are to be attained. Then, this qualitative approach should be complemented with the power density and reliability...

  11. Practical switching power supply design

    Brown, Martin C

    1990-01-01

    Take the ""black magic"" out of switching power supplies with Practical Switching Power Supply Design! This is a comprehensive ""hands-on"" guide to the theory behind, and design of, PWM and resonant switching supplies. You'll find information on switching supply operation and selecting an appropriate topology for your application. There's extensive coverage of buck, boost, flyback, push-pull, half bridge, and full bridge regulator circuits. Special attention is given to semiconductors used in switching supplies. RFI/EMI reduction, grounding, testing, and safety standards are also deta

  12. High power CW linac in PNC

    Toyama, S.; Wang, Y.L.; Emoto, T.

    1994-01-01

    Power Reactor and Nuclear Fuel Development Corporation (PNC) is developing a high power electron linac for various applications. The electron beam is accelerated in CW operation to get maximum beam current of 100 mA and energy of 10 MeV. Crucial components such as a high power L-band klystron and a high power traveling wave resonant ring (TWRR) accelerator guides were designed and manufactured and their performance were examined. These design and results from the recent high power RF tests were described in this paper. (author)

  13. A High Power Density Integrated Charger for Electric Vehicles with Active Ripple Compensation

    Pan, Liwen; Zhang, Chengning

    2015-01-01

    This paper suggests a high power density on-board integrated charger with active ripple compensation circuit for electric vehicles. To obtain a high power density and high efficiency, silicon carbide devices are reported to meet the requirement of high-switching-frequency operation. An integrated bidirectional converter is proposed to function as AC/DC battery charger and to transfer energy between battery pack and motor drive of the traction system. In addition, the conventional H-bridge cir...

  14. Wide Bandgap Extrinsic Photoconductive Switches

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  15. Research on high power intra-channel crosstalk attack in optical networks

    Ren, Shuai; Zhang, Yinfa; Wang, Jingyu; Zhang, Jumei; Rao, Xuejun; Fang, Yuanyuan

    2017-02-01

    The mechanism of high power intra-channel crosstalk attack is analyzed theoretically and the conclusion that power of attack signal and crosstalk coefficient of optical switch are the main factors for which high power intra-channel have destructive effect on quality of legitimate signals is drawn. Effects of high power intra-channel crosstalk attack on quality of legitimate signals and its capability of attack propagation are investigated quantitatively by building the simulation system in VPI software. The results show that legitimate signals through the first and the second stage optical switch are affected by attack and legitimate signal through the third stage optical switch is almost unaffected by attack when power of original attack signal (OAS) is above 20dB more than that of legitimate signals and crosstalk coefficient of optical switch is -20dB at optical cross connect 1 (OXC1). High power intra-channel crosstalk attack has a certain capability of attack propagation. Attack capability of OAS can be propagated to OXC3 when power of OAS is 27dB more than that of legitimate signals and crosstalk coefficient of optical switch is -20dB. We also find that the secondary attack signal (SAS) does not have capability of attack propagation.

  16. Electronic DC transformer with high power density

    Pavlovský, M.

    2006-01-01

    This thesis is concerned with the possibilities of increasing the power density of high-power dc-dc converters with galvanic isolation. Three cornerstones for reaching high power densities are identified as: size reduction of passive components, reduction of losses particularly in active components

  17. Semiconductor statistics

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  18. Semiconductor physics

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  19. R and D recommendations for future ERDA switch requirements

    Zucker, O.S.

    1976-01-01

    The following switches are briefly discussed: (1) high pressure and vacuum spark gaps, (2) liquid dielectric gaps, (3) solid dielectrics, (4) nonlinear ferromagnetic materials, (5) semiconductors, superconductors, (6) ferroelectric switches, (7) exploding wires, and (8) plasma instabilities

  20. High Power Fiber Laser Test Bed

    Federal Laboratory Consortium — This facility, unique within DoD, power-combines numerous cutting-edge fiber-coupled laser diode modules (FCLDM) to integrate pumping of high power rare earth-doped...

  1. Precise Model Analysis for 3-phase High Power Converter using the Harmonic State Space Modeling

    Kwon, Jun Bum; Wang, Xiongfei; Blaabjerg, Frede

    2015-01-01

    This paper presents about the generalized multi-frequency modeling and analysis methodology, which can be used in control loop design and stability analysis. In terms of the switching frequency of high power converter, there can be harmonics interruption if the voltage source converter has a low...... switching frequency ratio or multi-sampling frequency. The range of the control bandwidth can include the switching component. Thus, the systems become unstable. This paper applies the Harmonic State Space (HSS) Modeling method in order to find out the transfer function for each harmonics terms...

  2. Performance and reliability of TPE-2 device with pulsed high power source

    Sato, Y.; Takeda, S.; Kiyama, S.

    1987-01-01

    The performance and the reliability of TPE-2 device with pulsed high power sources are described. To obtain the stable high beta plasma, the reproducibility and the reliability of the pulsed power sources must be maintained. A new power crowbar system with high efficiency and the switches with low jitter time are adopted to the bank system. A monitor system which always watches the operational states of the switches is developed too, and applied for the fast rising capacitor banks of TPE-2 device. The reliable operation for the bank has been realized, based on the data of switch monitor system

  3. High current and high power superconducting rectifiers

    Kate, H.H.J. ten; Bunk, P.B.; Klundert, L.J.M. van de; Britton, R.B.

    1981-01-01

    Results on three experimental superconducting rectifiers are reported. Two of them are 1 kA low frequency flux pumps, one thermally and magnetically switched. The third is a low-current high-frequency magnetically switched rectifier which can use the mains directly. (author)

  4. A Series-LC-Filtered Active Trap Filter for High Power Voltage Source Inverter

    Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang

    2016-01-01

    Passive trap filters are widely used in high power Voltage Source Inverters (VSI) for the switching harmonic attenuation. The usage of the passive trap filters requires clustered and fixed switching harmonic spectrum, which is not the case for low pulse-ratio or Variable Switching Frequency (VSF...... current control of the auxiliary converter, which can be challenging considering that the switching harmonics have very high orders. In this paper, an Active Trap Filter (ATF) based on output impedance shaping is proposed. It is able to bypass the switching harmonics by providing nearly zero output...... impedance. A series-LC-filter is used to reduce the power rating and synthesize the desired output impedance of the ATF. Compared with the existing approaches, the compensated frequency range is greatly enlarged. Also, the current reference is simply set to zero, which reduces the complexity of the control...

  5. ICAN: High power neutral beam generation

    Moustaizis, S.D.; Lalousis, P.; Perrakis, K.; Auvray, P.; Larour, J.; Ducret, J.E.; Balcou, P.

    2015-01-01

    During the last few years there is an increasing interest on the development of alternative high power new negative ion source for Tokamak applications. The proposed new neutral beam device presents a number of advantages with respect to: the density current, the acceleration voltage, the relative compact dimension of the negative ion source, and the coupling of a high power laser beam for photo-neutralization of the negative ion beam. Here we numerically investigate, using a multi- fluid 1-D code, the acceleration and the extraction of high power ion beam from a Magnetically Insulated Diode (MID). The diode configuration will be coupled to a high power device capable of extracting a current up to a few kA with an accelerating voltage up to MeV. An efficiency of up to 92% of the coupling of the laser beam, is required in order to obtain a high power, up to GW, neutral beam. The new high energy, high average power, high efficiency (up to 30%) ICAN fiber laser is proposed for both the plasma generation and the photo-neutralizer configuration. (authors)

  6. High power communication satellites power systems study

    Josloff, A.T.; Peterson, J.R.

    1994-01-01

    This paper discusses a DOE-funded study to evaluate the commercial attractiveness of high power communication satellites and assesses the attributes of both conventional photovoltaic and reactor power systems. This study brings together a preeminent US Industry/Russian team to cooperate on the role of high power communication satellites in the rapidly expanding communications revolution. These high power satellites play a vital role in assuring availability of universally accessible, wide bandwidth communications, for high definition TV, super computer networks and other services. Satellites are ideally suited to provide the wide bandwidths and data rates required and are unique in the ability to provide services directly to the users. As new or relocated markets arise, satellites offer a flexibility that conventional distribution services cannot match, and it is no longer necessary to be near population centers to take advantage of the telecommunication revolution. The geopolitical implications of these substantially enhanced communications capabilities will be significant

  7. High power all solid state VUV lasers

    Zhang, Shen-jin; Cui, Da-fu; Zhang, Feng-feng; Xu, Zhi; Wang, Zhi-min; Yang, Feng; Zong, Nan; Tu, Wei; Chen, Ying; Xu, Hong-yan; Xu, Feng-liang; Peng, Qin-jun; Wang, Xiao-yang; Chen, Chuang-tian; Xu, Zu-yan

    2014-01-01

    Highlights: • Polarization and pulse repetition rate adjustable ps 177.3 nm laser was developed. • Wavelength tunable ns, ps and fs VUV lasers were developed. • High power ns 177.3 nm laser with narrow linewidth was investigated. - Abstract: We report the investigation on the high power all solid state vacuum ultra-violet (VUV) lasers by means of nonlinear frequency conversion with KBe 2 BO 3 F 2 (KBBF) nonlinear crystal. Several all solid state VUV lasers have developed in our group, including polarization and pulse repetition rate adjustable picosecond 177.3 nm VUV laser, wavelength tunable nanosecond, picosecond and femtosecond VUV lasers, high power ns 177.3 nm laser with narrow linewidth. The VUV lasers have impact, accurate and precise advantage

  8. Analysis and control of high power synchronous rectifier

    Singh Tejinder.

    1993-01-01

    The description, steady state/dynamic analysis and control design of a high power synchronous rectifier is presented. The proposed rectifier system exploits selective harmonic elimination modulation techniques to minimize filtering requirements, and overcomes the dc voltage limitations of prior art equipment. A detailed derivation of the optimum pulse width modulation switching patterns, in the low frequency range for high power applications is presented. A general mathematical model of the rectifier is established which is non-linear and time-invariant. The transformation of reference frame and small signal linearization techniques are used to obtain closed form solutions from the mathematical model. The modelling procedure is verified by computer simulation. The closed loop design of the synchronous rectifier based on a phase and amplitude control strategy is investigated. The transfer functions derived from this analysis are used for the design of the regulators. The steady-state and dynamic results predicted by computer simulation are verified by PECAN. A systematic design procedure is developed and a detailed design example of a 1 MV-amp rectifer system is presented. 23 refs., 33 figs.

  9. Optical engineering for high power laser applications

    Novaro, M.

    1993-01-01

    Laser facilities for Inertial Confinement Fusion (I.C.F.) experiments require laser and X ray optics able to withstand short pulse conditions. After a brief recall of high power laser system arrangements and of the characteristics of their optics, the authors will present some X ray optical developments

  10. Development of a high power femtosecond laser

    Neethling, PH

    2010-10-01

    Full Text Available The Laser Research Institute and the CSIR National Laser Centre are developing a high power femtosecond laser system in a joint project with a phased approach. The laser system consists of an fs oscillator and a regenerative amplifier. An OPCPA...

  11. Targets for high power neutral beams

    Kim, J.

    1980-01-01

    Stopping high-power, long-pulse beams is fast becoming an engineering challenge, particularly in neutral beam injectors for heating magnetically confined plasmas. A brief review of neutral beam target technology is presented along with heat transfer calculations for some selected target designs

  12. Semiconductor Manufacturing equipment introduction

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  13. Semiconductor spintronics

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  14. A Transformer-less Partial Power Boost Converter for PV Applications Using a Three-Level Switching Cell

    Agamy, Mohammed; Harfman-Todorovic, Maja; Elasser, Ahmed; Essakiappan, Somasundaram

    2013-03-01

    Photovoltaic architectures with distributed power electronics provide many advantages in terms of energy yield as well as system level optimization. As the power level of the solar farm increases it becomes more beneficial to increase the dc collection network voltage, which requires the use of power devices with higher voltage ratings, and thus making the design of efficient, low cost, distributed power converters more challenging. In this paper a simple partial power converter topology is proposed. The topology is implemented using a three-level switching cell, which allows the use of semiconductor devices with lower voltage rating; thus improving design and performance and reducing converter cost. This makes the converters suitable for use for medium to high power applications where dc-link voltages of 600V~1kV may be needed without the need for high voltage devices. Converter operation and experimental results are presented for two partial power circuit variants using three-level switching cells.

  15. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

    Chi, Mingjun; Erbert, G.; Sumpf, B.

    2010-01-01

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

  16. Superconductivity, energy storage and switching

    Laquer, H.L.

    1974-01-01

    The phenomenon of superconductivity can contribute to the technology of energy storage and switching in two distinct ways. On one hand the zero resistivity of the superconductor can produce essentially infinite time constants so that an inductive storage system can be charged from very low power sources. On the other hand, the recovery of finite resistivity in a normal-going superconducting switch can take place in extremely short times, so that a system can be made to deliver energy at a very high power level. Topics reviewed include: physics of superconductivity, limits to switching speed of superconductors, physical and engineering properties of superconducting materials and assemblies, switching methods, load impedance considerations, refrigeration economics, limitations imposed by present day and near term technology, performance of existing and planned energy storage systems, and a comparison with some alternative methods of storing and switching energy. (U.S.)

  17. New high power linacs and beam physics

    Wangler, T.P.; Gray, E.R.; Nath, S.; Crandall, K.R.; Hasegawa, K.

    1997-01-01

    New high-power proton linacs must be designed to control beam loss, which can lead to radioactivation of the accelerator. The threat of beam loss is increased significantly by the formation of beam halo. Numerical simulation studies have identified the space-charge interactions, especially those that occur in rms mismatched beams, as a major concern for halo growth. The maximum-amplitude predictions of the simulation codes must be subjected to independent tests to confirm the validity of the results. Consequently, the authors compare predictions from the particle-core halo models with computer simulations to test their understanding of the halo mechanisms that are incorporated in the computer codes. They present and discuss scaling laws that provide guidance for high-power linac design

  18. The high-power iodine laser

    Brederlow, G.; Fill, E.; Witte, K. J.

    The book provides a description of the present state of the art concerning the iodine laser, giving particular attention to the design and operation of pulsed high-power iodine lasers. The basic features of the laser are examined, taking into account aspects of spontaneous emission lifetime, hyperfine structure, line broadening and line shifts, stimulated emission cross sections, the influence of magnetic fields, sublevel relaxation, the photodissociation of alkyl iodides, flashlamp technology, excitation in a direct discharge, chemical excitation, and questions regarding the chemical kinetics of the photodissociation iodine laser. The principles of high-power operation are considered along with aspects of beam quality and losses, the design and layout of an iodine laser system, the scalability and prospects of the iodine laser, and the design of the single-beam Asterix III laser.

  19. Industrial Applications of High Power Ultrasonics

    Patist, Alex; Bates, Darren

    Since the change of the millennium, high-power ultrasound has become an alternative food processing technology applicable to large-scale commercial applications such as emulsification, homogenization, extraction, crystallization, dewatering, low-temperature pasteurization, degassing, defoaming, activation and inactivation of enzymes, particle size reduction, extrusion, and viscosity alteration. This new focus can be attributed to significant improvements in equipment design and efficiency during the late 1990 s. Like most innovative food processing technologies, high-power ultrasonics is not an off-the-shelf technology, and thus requires careful development and scale-up for each and every application. The objective of this chapter is to present examples of ultrasonic applications that have been successful at the commercialization stage, advantages, and limitations, as well as key learnings from scaling up an innovative food technology in general.

  20. High power RF oscillator with Marx generators

    Murase, Hiroshi; Hayashi, Izumi

    1980-01-01

    A method to maintain RF oscillation by using many Marx generators was proposed and studied experimentally. Many charging circuits were connected to an oscillator circuit, and successive pulsed charging was made. This successive charging amplified and maintained the RF oscillation. The use of vacuum gaps and high power silicon diodes improved the characteristics of RF current cut-off of the circuit. The efficiency of the pulsed charging from Marx generators to a condenser was theoretically investigated. The theoretical result showed the maximum efficiency of 0.98. The practical efficiency obtained by using a proposed circuit with a high power oscillator was in the range 0.50 to 0.56. The obtained effective output power of the RF pulses was 11 MW. The maximum holding time of the RF pulses was about 21 microsecond. (Kato, T.)

  1. High power communication satellites power systems study

    Josloff, Allan T.; Peterson, Jerry R.

    1995-01-01

    This paper discusses a planned study to evaluate the commercial attractiveness of high power communication satellites and assesses the attributes of both conventional photovoltaic and reactor power systems. These high power satellites can play a vital role in assuring availability of universally accessible, wide bandwidth communications, for high definition TV, super computer networks and other services. Satellites are ideally suited to provide the wide bandwidths and data rates required and are unique in the ability to provide services directly to the users. As new or relocated markets arise, satellites offer a flexibility that conventional distribution services cannot match, and it is no longer necessary to be near population centers to take advantage of the telecommunication revolution. The geopolitical implications of these substantially enhanced communications capabilities can be significant.

  2. High-power, high-efficiency FELs

    Sessler, A.M.

    1989-04-01

    High power, high efficiency FELs require tapering, as the particles loose energy, so as to maintain resonance between the electromagnetic wave and the particles. They also require focusing of the particles (usually done with curved pole faces) and focusing of the electromagnetic wave (i.e. optical guiding). In addition, one must avoid transverse beam instabilities (primarily resistive wall) and longitudinal instabilities (i.e sidebands). 18 refs., 7 figs., 3 tabs

  3. The physics of photoconductive spark gap switching : pushing the frontiers

    Hendriks, J.

    2006-01-01

    Photoconductive switching of an atmospheric, air-¯lled spark gap by a high-power fem- tosecond laser is a novel approach for switching high voltages into pulses with a very fast rise time (order ps) and almost no shot-to-shot time variation (jitter). Such a switch makes it possible to synchronize

  4. High Temperature, High Power Piezoelectric Composite Transducers

    Lee, Hyeong Jae; Zhang, Shujun; Bar-Cohen, Yoseph; Sherrit, StewarT.

    2014-01-01

    Piezoelectric composites are a class of functional materials consisting of piezoelectric active materials and non-piezoelectric passive polymers, mechanically attached together to form different connectivities. These composites have several advantages compared to conventional piezoelectric ceramics and polymers, including improved electromechanical properties, mechanical flexibility and the ability to tailor properties by using several different connectivity patterns. These advantages have led to the improvement of overall transducer performance, such as transducer sensitivity and bandwidth, resulting in rapid implementation of piezoelectric composites in medical imaging ultrasounds and other acoustic transducers. Recently, new piezoelectric composite transducers have been developed with optimized composite components that have improved thermal stability and mechanical quality factors, making them promising candidates for high temperature, high power transducer applications, such as therapeutic ultrasound, high power ultrasonic wirebonding, high temperature non-destructive testing, and downhole energy harvesting. This paper will present recent developments of piezoelectric composite technology for high temperature and high power applications. The concerns and limitations of using piezoelectric composites will also be discussed, and the expected future research directions will be outlined. PMID:25111242

  5. High Power UV LED Industrial Curing Systems

    Karlicek, Robert, F., Jr; Sargent, Robert

    2012-05-14

    UV curing is a green technology that is largely underutilized because UV radiation sources like Hg Lamps are unreliable and difficult to use. High Power UV LEDs are now efficient enough to replace Hg Lamps, and offer significantly improved performance relative to Hg Lamps. In this study, a modular, scalable high power UV LED curing system was designed and tested, performing well in industrial coating evaluations. In order to achieve mechanical form factors similar to commercial Hg Lamp systems, a new patent pending design was employed enabling high irradiance at long working distances. While high power UV LEDs are currently only available at longer UVA wavelengths, rapid progress on UVC LEDs and the development of new formulations designed specifically for use with UV LED sources will converge to drive more rapid adoption of UV curing technology. An assessment of the environmental impact of replacing Hg Lamp systems with UV LED systems was performed. Since UV curing is used in only a small portion of the industrial printing, painting and coating markets, the ease of use of UV LED systems should increase the use of UV curing technology. Even a small penetration of the significant number of industrial applications still using oven curing and drying will lead to significant reductions in energy consumption and reductions in the emission of green house gases and solvent emissions.

  6. Semiconductor spintronics

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  7. Investigation of micro-plasma in physiological saline produced by a high-power YAG laser

    Lu Jian; Ni Xiaowu; He Anzhi

    1994-01-01

    Micro-plasma and shock waves in the physiological saline produced by a Q-switched pulse YAG laser with nearby optical breakdown threshold energy are investigated by using optical shadowing exploring method, and a series of optical shadow graphs of micro-plasma and shock waves versus the incident laser energy and the delay time are obtained. Influence of mechanical action of shock waves for the high-power pulse laser on the ophthalmic treatment is discussed

  8. High-power LEDs for plant cultivation

    Tamulaitis, Gintautas; Duchovskis, Pavelas; Bliznikas, Zenius; Breive, Kestutis; Ulinskaite, Raimonda; Brazaityte, Ausra; Novickovas, Algirdas; Zukauskas, Arturas; Shur, Michael S.

    2004-10-01

    We report on high-power solid-state lighting facility for cultivation of greenhouse vegetables and on the results of the study of control of photosynthetic activity and growth morphology of radish and lettuce imposed by variation of the spectral composition of illumination. Experimental lighting modules (useful area of 0.22 m2) were designed based on 4 types of high-power light-emitting diodes (LEDs) with emission peaked in red at the wavelengths of 660 nm and 640 nm (predominantly absorbed by chlorophyll a and b for photosynthesis, respectively), in blue at 455 nm (phototropic function), and in far-red at 735 nm (important for photomorphology). Morphological characteristics, chlorophyll and phytohormone concentrations in radish and lettuce grown in phytotron chambers under lighting with different spectral composition of the LED-based illuminator and under illumination by high pressure sodium lamps with an equivalent photosynthetic photon flux density were compared. A well-balanced solid-state lighting was found to enhance production of green mass and to ensure healthy morphogenesis of plants compared to those grown using conventional lighting. We observed that the plant morphology and concentrations of morphologically active phytohormones is strongly affected by the spectral composition of light in the red region. Commercial application of the LED-based illumination for large-scale plant cultivation is discussed. This technology is favorable from the point of view of energy consumption, controllable growth, and food safety but is hindered by high cost of the LEDs. Large scale manufacturing of high-power red AlInGaP-based LEDs emitting at 650 nm and a further decrease of the photon price for the LEDs emitting in the vicinity of the absorption peak of chlorophylls have to be achieved to promote horticulture applications.

  9. High power VCSELs for miniature optical sensors

    Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

    2010-02-01

    Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

  10. High power gyrotrons: a close perspective

    Kartikeyan, M.V.

    2012-01-01

    Gyrotrons and their variants, popularly known as gyrodevices are millimetric wave sources provide very high powers ranging from long pulse to continuous wave (CW) for various technological, scientific and industrial applications. From their conception (monotron-version) in the late fifties until their successful development for various applications, these devices have come a long way technologically and made an irreversible impact on both users and developers. The possible applications of high power millimeter and sub-millimeter waves from gyrotrons and their variants (gyro-devices) span a wide range of technologies. The plasma physics community has already taken advantage of the recent advances of gyrotrons in the areas of RF plasma production, heating, non-inductive current drive, plasma stabilization and active plasma diagnostics for magnetic confinement thermonuclear fusion research, such as lower hybrid current drive (LHCD) (8 GHz), electron cyclotron resonance heating (ECRH) (28-170-220 GHz), electron cyclotron current drive (ECCD), collective Thomson scattering (CTS), heat-wave propagation experiments, and space-power grid (SPG) applications. Other important applications of gyrotrons are electron cyclotron resonance (ECR) discharges for the generation of multi- charged ions and soft X-rays, as well as industrial materials processing and plasma chemistry. Submillimeter wave gyrotrons are employed in high frequency, broadband electron paramagnetic resonance (EPR) spectroscopy. Additional future applications await the development of novel high power gyro-amplifiers and devices for high resolution radar ranging and imaging in atmospheric and planetary science as well as deep space and specialized satellite communications, RF drivers for next generation high gradient linear accelerators (supercolliders), high resolution Doppler radar, radar ranging and imaging in atmospheric and planetary science, drivers for next-generation high-gradient linear accelerators

  11. High-power converters and AC drives

    Wu, Bin

    2017-01-01

    This new edition reflects the recent technological advancements in the MV drive industry, such as advanced multilevel converters and drive configurations. It includes three new chapters, Control of Synchronous Motor Drives, Transformerless MV Drives, and Matrix Converter Fed Drives. In addition, there are extensively revised chapters on Multilevel Voltage Source Inverters and Voltage Source Inverter-Fed Drives. This book includes a systematic analysis on a variety of high-power multilevel converters, illustrates important concepts with simulations and experiments, introduces various megawatt drives produced by world leading drive manufacturers, and addresses practical problems and their mitigations methods.

  12. An 8–18 GHz broadband high power amplifier

    Wang Lifa; Yang Ruixia; Li Yanlei; Wu Jingfeng

    2011-01-01

    An 8–18 GHz broadband high power amplifier (HPA) with a hybrid integrated circuit (HIC) is designed and fabricated. This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process. In order to decrease electromagnetic interference, a multilayer AlN material with good heat dissipation is adopted as the carrier of the power amplifier. When the input power is 25 dBm, the saturated power of the continuous wave (CW) outputted by the power amplifier is more than 39 dBm within the frequency range of 8–13 GHz, while it is more than 38.6 dBm within other frequency ranges. We obtain the peak power output, 39.4 dBm, at the frequency of 11.9 GHz. In the whole frequency band, the power-added efficiency is more than 18%. When the input power is 18 dBm, the small signal gain is 15.7 ± 0.7 dB. The dimensions of the HPA are 25 × 15 × 1.5 mm 3 . (semiconductor integrated circuits)

  13. Gain and Index Dynamics in Semiconductor Lasers

    Hvam, Jørn Märcher

    Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

  14. 8. High power laser and ignition facilities

    Bayramian, A.J.; Beach, R.J.; Bibeau, C.

    2002-01-01

    This document gives a review of the various high power laser projects and ignition facilities in the world: the Mercury laser system and Electra (Usa), the krypton fluoride (KrF) laser and the HALNA (high average power laser for nuclear-fusion application) project (Japan), the Shenguang series, the Xingguang facility and the TIL (technical integration line) facility (China), the Vulcan peta-watt interaction facility (UK), the Megajoule project and its feasibility phase: the LIL (laser integration line) facility (France), the Asterix IV/PALS high power laser facility (Czech Republic), and the Phelix project (Germany). In Japan the 100 TW Petawatt Module Laser, constructed in 1997, is being upgraded to the world biggest peta-watt laser. Experiments have been performed with single-pulse large aperture e-beam-pumped Garpun (Russia) and with high-current-density El-1 KrF laser installation (Russia) to investigate Al-Be foil transmittance and stability to multiple e-beam irradiations. An article is dedicated to a comparison of debris shield impacts for 2 experiments at NIF (national ignition facility). (A.C.)

  15. High power neutral beam injection in LHD

    Tsumori, K.; Takeiri, Y.; Nagaoka, K.

    2005-01-01

    The results of high power injection with a neutral beam injection (NBI) system for the large helical device (LHD) are reported. The system consists of three beam-lines, and two hydrogen negative ion (H - ion) sources are installed in each beam-line. In order to improve the injection power, the new beam accelerator with multi-slot grounded grid (MSGG) has been developed and applied to one of the beam-lines. Using the accelerator, the maximum powers of 5.7 MW were achieved in 2003 and 2004, and the energy of 189 keV reached at maximum. The power and energy exceeded the design values of the individual beam-line for LHD. The other beam-lines also increased their injection power up to about 4 MW, and the total injection power of 13.1 MW was achieved with three beam-lines in 2003. Although the accelerator had an advantage in high power beam injection, it involved a demerit in the beam focal condition. The disadvantage was resolved by modifying the aperture shapes of the steering grid. (author)

  16. Powersail High Power Propulsion System Design Study

    Gulczinski, Frank S., III

    2000-11-01

    A desire by the United States Air Force to exploit the space environment has led to a need for increased on-orbit electrical power availability. To enable this, the Air Force Research Laboratory Space Vehicles Directorate (AFRL/ VS) is developing Powersail: a two-phased program to demonstrate high power (100 kW to 1 MW) capability in space using a deployable, flexible solar array connected to the host spacecraft using a slack umbilical. The first phase will be a proof-of-concept demonstration at 50 kW, followed by the second phase, an operational system at full power. In support of this program, the AFRL propulsion Directorate's Spacecraft Propulsion Branch (AFRL/PRS ) at Edwards AFB has commissioned a design study of the Powersail High Power Propulsion System. The purpose of this study, the results of which are summarized in this paper, is to perform mission and design trades to identify potential full-power applications (both near-Earth and interplanetary) and the corresponding propulsion system requirements and design. The design study shall farther identify a suitable low power demonstration flight that maximizes risk reduction for the fully operational system. This propulsion system is expected to be threefold: (1) primary propulsion for moving the entire vehicle, (2) a propulsion unit that maintains the solar array position relative to the host spacecraft, and (3) control propulsion for maintaining proper orientation for the flexible solar array.

  17. Oxide semiconductors

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  18. Semiconductor statistics

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  19. Radiation tolerance of amorphous semiconductors

    Nicolaides, R.V.; DeFeo, S.; Doremus, L.W.

    1976-01-01

    In an attempt to determine the threshold radiation damage in amorphous semiconductors, radiation tests were performed on amorphous semiconductor thin film materials and on threshold and memory devices. The influence of flash x-rays and neutron radiation upon the switching voltages, on- and off-state characteristics, dielectric response, optical transmission, absorption band edge and photoconductivity were measured prior to, during and following irradiation. These extensive tests showed the high radiation tolerance of amorphous semiconductor materials. Electrical and optical properties, other than photoconductivity, have a neutron radiation tolerance threshold above 10 17 nvt in the steady state and 10 14 nvt in short (50 μsec to 16 msec) pulses. Photoconductivity increases by 1 1 / 2 orders of magnitude at the level of 10 14 nvt (short pulses of 50 μsec). Super flash x-rays up to 5000 rads (Si), 20 nsec, do not initiate switching in off-state samples which are voltage biased up to 90 percent of the threshold voltage. Both memory and threshold amorphous devices are capable of switching on and off during nuclear radiation transients at least as high as 2 x 10 14 nvt in 50 μsec pulses

  20. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    ISLAM, N.E.; SCHAMILOGLU, E.; MAR, ALAN; LOUBRIEL, GUILLERMO M.; ZUTAVERN, FRED J.; JOSHI, R.P.

    2000-01-01

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 10 4 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10 8 shots for electro-optic drivers. Much effort is currently being channeled in the

  1. Reactor G1: high power experiments

    Laage, F. de; Teste du Baillet, A.; Veyssiere, A.; Wanner, G.

    1957-01-01

    The experiments carried out in the starting-up programme of the reactor G1 comprised a series of tests at high power, which allowed the following points to be studied: 1- Effect of poisoning by Xenon (absolute value, evolution). 2- Temperature coefficients of the uranium and graphite for a temperature distribution corresponding to heating by fission. 3- Effect of the pressure (due to the coiling system) on the reactivity. 4- Calibration of the security rods as a function of their position in the pile (1). 5- Temperature distribution of the graphite, the sheathing, the uranium and the air leaving the canals, in a pile running normally at high power. 6- Neutron flux distribution in a pile running normally at high power. 7- Determination of the power by nuclear and thermodynamic methods. These experiments have been carried out under two very different pile conditions. From the 1. to the 15. of August 1956, a series of power increases, followed by periods of stabilisation, were induced in a pile containing uranium only, in 457 canals, amounting to about 34 tons of fuel. A knowledge of the efficiency of the control rods in such a pile has made it possible to measure with good accuracy the principal effects at high temperatures, that is, to deal with points 1, 2, 3, 5. Flux charts giving information on the variations of the material Laplacian and extrapolation lengths in the reflector have been drawn up. Finally the thermodynamic power has been measured under good conditions, in spite of some installation difficulties. On September 16, the pile had its final charge of 100 tons. All the canals were loaded, 1,234 with uranium and 53 (i.e. exactly 4 per cent of the total number) with thorium uniformly distributed in a square lattice of 100 cm side. Since technical difficulties prevented the calibration of the control rods, the measurements were limited to the determination of the thermodynamic power and the temperature distributions (points 5 and 7). This report will

  2. Development of modular scalable pulsed power systems for high power magnetized plasma experiments

    Bean, I. A.; Weber, T. E.; Adams, C. S.; Henderson, B. R.; Klim, A. J.

    2017-10-01

    New pulsed power switches and trigger drivers are being developed in order to explore higher energy regimes in the Magnetic Shock Experiment (MSX) at Los Alamos National Laboratory. To achieve the required plasma velocities, high-power (approx. 100 kV, 100s of kA), high charge transfer (approx. 1 C), low-jitter (few ns) gas switches are needed. A study has been conducted on the effects of various electrode geometries and materials, dielectric media, and triggering strategies; resulting in the design of a low-inductance annular field-distortion switch, optimized for use with dry air at 90 psig, and triggered by a low-jitter, rapid rise-time solid-state Linear Transformer Driver. The switch geometry and electrical characteristics are designed to be compatible with Syllac style capacitors, and are intended to be deployed in modular configurations. The scalable nature of this approach will enable the rapid design and implementation of a wide variety of high-power magnetized plasma experiments. This work is supported by the U.S. Department of Energy, National Nuclear Security Administration. Approved for unlimited release, LA-UR-17-2578.

  3. Semiconductor Detectors

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  4. Splitting of high power, cw proton beams

    Alberto Facco

    2007-09-01

    Full Text Available A simple method for splitting a high power, continuous wave (cw proton beam in two or more branches with low losses has been developed in the framework of the EURISOL (European Isotope Separation On-Line Radioactive Ion Beam Facility design study. The aim of the system is to deliver up to 4 MW of H^{-} beam to the main radioactive ion beam production target, and up to 100 kW of proton beams to three more targets, simultaneously. A three-step method is used, which includes magnetic neutralization of a fraction of the main H^{-} beam, magnetic splitting of H^{-} and H^{0}, and stripping of H^{0} to H^{+}. The method allows slow raising and individual fine adjustment of the beam intensity in each branch.

  5. QED studies using high-power lasers

    Mattias Marklund

    2010-01-01

    Complete text of publication follows. The event of extreme lasers, which intensities above 10 22 W/cm 2 will be reached on a routine basis, will give us opportunities to probe new aspects of quantum electrodynamics. In particular, the non-trivial properties of the quantum vacuum can be investigated as we reach previously unattainable laser intensities. Effects such as vacuum birefringence and pair production in strong fields could thus be probed. The prospects of obtaining new insights regarding the non-perturbative structure of quantum field theories shows that the next generation laser facilities can be important tool for fundamental physical studies. Here we aim at giving a brief overview of such aspects of high-power laser physics.

  6. Advanced Output Coupling for High Power Gyrotrons

    Read, Michael [Calabazas Creek Research, Inc., San Mateo, CA (United States); Ives, Robert Lawrence [Calabazas Creek Research, Inc., San Mateo, CA (United States); Marsden, David [Calabazas Creek Research, Inc., San Mateo, CA (United States); Collins, George [Calabazas Creek Research, Inc., San Mateo, CA (United States); Temkin, Richard [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Guss, William [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Lohr, John [General Atomics, La Jolla, CA (United States); Neilson, Jeffrey [Lexam Research, Redwood City, CA (United States); Bui, Thuc [Calabazas Creek Research, Inc., San Mateo, CA (United States)

    2016-11-28

    The Phase II program developed an internal RF coupler that transforms the whispering gallery RF mode produced in gyrotron cavities to an HE11 waveguide mode propagating in corrugated waveguide. This power is extracted from the vacuum using a broadband, chemical vapor deposited (CVD) diamond, Brewster angle window capable of transmitting more than 1.5 MW CW of RF power over a broad range of frequencies. This coupling system eliminates the Mirror Optical Units now required to externally couple Gaussian output power into corrugated waveguide, significantly reducing system cost and increasing efficiency. The program simulated the performance using a broad range of advanced computer codes to optimize the design. Both a direct coupler and Brewster angle window were built and tested at low and high power. Test results confirmed the performance of both devices and demonstrated they are capable of achieving the required performance for scientific, defense, industrial, and medical applications.

  7. Manufacture of Radio Frequency Micromachined Switches with Annealing

    Lin, Cheng-Yang; Dai, Ching-Liang

    2014-01-01

    The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspe...

  8. A Study on the Improvement of Switching Speed of NPT-IGBT by Fast Neutron Irradiation

    Baek, H. N.; Sun, G. M.; Kim, J. S.; Hoang, S. M. T.; Jin, M. E.; Jin, S. B.; Ahn, S. H. [KAERI, Daejeon (Korea, Republic of)

    2016-05-15

    The insulated gate bipolar transistor (IGBT) has been widely used for high power switching devices due to low on-state forward voltage drop and fast switching speed. But, turn-off delay time occurs due to the tail current generated by the minority carrier existing in the n-drift region during turn-off, which reduces the switching speed. Recently, to mitigate this problem, studies on the control of the MCLT to improve the switching speed of IGBTs are carried out. A crystal defect is formed in the n-drift region of an IGBT to realize a deep energy level within the energy band. The deep level act as the recombination center of the minority carrier to reduce the turn-off delay time and control the lifetime by reducing the lifetime of the minority carrier injected during the device operation. The particle-beam irradiation method, such as electron, proton, fast neutron and others, has been used to control the lifetime of the minority carrier of a silicon power semiconductor device. To improve the switching speed of a IGBT, devices were produced by irradiating various doses of fast neutron, and electrical properties were comparatively analyzed with the IGBT device where before irradiated. The reduced in the lifetime of the minority carrier flowing into the n-drift region due to the crystal defect helps improve the switching speed of the IGBT. But, the resistance component increased due to the crystal defect generated by the fast neutron irradiation in the on-state, increasing of the forward voltage drop. So, to improve and optimize the IGBT performance, appropriate condition should be determined by trading off each electrical properties.

  9. A Study on the Improvement of Switching Speed of NPT-IGBT by Fast Neutron Irradiation

    Baek, H. N.; Sun, G. M.; Kim, J. S.; Hoang, S. M. T.; Jin, M. E.; Jin, S. B.; Ahn, S. H.

    2016-01-01

    The insulated gate bipolar transistor (IGBT) has been widely used for high power switching devices due to low on-state forward voltage drop and fast switching speed. But, turn-off delay time occurs due to the tail current generated by the minority carrier existing in the n-drift region during turn-off, which reduces the switching speed. Recently, to mitigate this problem, studies on the control of the MCLT to improve the switching speed of IGBTs are carried out. A crystal defect is formed in the n-drift region of an IGBT to realize a deep energy level within the energy band. The deep level act as the recombination center of the minority carrier to reduce the turn-off delay time and control the lifetime by reducing the lifetime of the minority carrier injected during the device operation. The particle-beam irradiation method, such as electron, proton, fast neutron and others, has been used to control the lifetime of the minority carrier of a silicon power semiconductor device. To improve the switching speed of a IGBT, devices were produced by irradiating various doses of fast neutron, and electrical properties were comparatively analyzed with the IGBT device where before irradiated. The reduced in the lifetime of the minority carrier flowing into the n-drift region due to the crystal defect helps improve the switching speed of the IGBT. But, the resistance component increased due to the crystal defect generated by the fast neutron irradiation in the on-state, increasing of the forward voltage drop. So, to improve and optimize the IGBT performance, appropriate condition should be determined by trading off each electrical properties

  10. Below-bandgap photoreflection spectroscopy of semiconductor laser structures

    Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

    2004-01-01

    A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

  11. High-power light-emitting diode based facility for plant cultivation

    Tamulaitis, G [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Duchovskis, P [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Bliznikas, Z [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Breive, K [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Ulinskaite, R [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Brazaityte, A [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Novickovas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Zukauskas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania)

    2005-09-07

    Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated.

  12. High-power light-emitting diode based facility for plant cultivation

    Tamulaitis, G; Duchovskis, P; Bliznikas, Z; Breive, K; Ulinskaite, R; Brazaityte, A; Novickovas, A; Zukauskas, A

    2005-01-01

    Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated

  13. Semiconductor sensors

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  14. Semiconductor Optics

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  15. Thermal Impact Analysis of Circulating Current in High Power Modular Online Uninterruptible Power Supplies Application

    Zhang, Chi; Guerrero, Josep M.; Quintero, Juan Carlos Vasquez

    2017-01-01

    In modular uninterruptible power supplies (UPSs), several DC/AC modules are required to work in parallel. This structure allows the system to be more reliable and flexible. These DC/AC modules share the same DC bus and AC critical bus. Module differences, such as filter inductor, filter capacitor......, control parameters, and so on, will make it possible for the potential zero sequence current to flow among the modules. This undesired type of circulating current will bring extra losses to the power semiconductor devices in the system, which should be paid special attention in high power application...... scenarios. In this paper, plug’n’play modules and cycle control are discussed and validated through experimental results. Moreover, potential zero sequence circulating current impact on power semiconductor devices thermal performance is also analyzed in this paper....

  16. Harmonic Analysis and Mitigation of Low- Frequency Switching Voltage Source Inverter with Auxiliary VSI

    Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

    2018-01-01

    The output currents of high-power Voltage Source Inverters (VSIs) are distorted by the switching harmonics and the background harmonics in the grid voltage. This paper presents an active harmonic filtering scheme for high-power, low-frequency switching VSIs with an additional auxiliary VSI. In th...

  17. High power diode lasers converted to the visible

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.

    2017-01-01

    High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....

  18. Semiconductor annealing

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  19. Three-phase multilevel inverter configuration for open-winding high power application

    Sanjeevikumar, Padmanaban; Blaabjerg, Frede; Wheeler, Patrick William

    2015-01-01

    This paper work exploits a new dual open-winding three-phase multilevel inverter configuration suitable for high power medium-voltage applications. Modular structure comprised of standard three-phase voltage source inverter (VSI) along with one additional bi-directional semiconductor device (MOSFET...... for implementation purpose. Proposed dual-inverter configuration generates multilevel outputs with benefit includes reduced THD and dv/dt in comparison to other dual-inverter topologies. Complete model of the multilevel ac drive is developed with simple MSCFM modulation in Matlab/PLECs numerical software...

  20. Test of a High Power Target Design

    2002-01-01

    %IS343 :\\\\ \\\\ A high power tantalum disc-foil target (RIST) has been developed for the proposed radioactive beam facility, SIRIUS, at the Rutherford Appleton Laboratory. The yield and release characteristics of the RIST target design have been measured at ISOLDE. The results indicate that the yields are at least as good as the best ISOLDE roll-foil targets and that the release curves are significantly faster in most cases. Both targets use 20 -25 $\\mu$m thick foils, but in a different internal geometry.\\\\ \\\\Investigations have continued at ISOLDE with targets having different foil thickness and internal geometries in an attempt to understand the release mechanisms and in particular to maximise the yield of short lived isotopes. A theoretical model has been developed which fits the release curves and gives physical values of the diffusion constants.\\\\ \\\\The latest target is constructed from 2 $\\mu$m thick tantalum foils (mass only 10 mg) and shows very short release times. The yield of $^{11}$Li (half-life of ...

  1. High power diode laser remelting of metals

    Chmelickova, H; Tomastik, J; Ctvrtlik, R; Supik, J; Nemecek, S; Misek, M

    2014-01-01

    This article is focused on the laser surface remelting of the steel samples with predefined overlapping of the laser spots. The goal of our experimental work was to evaluate microstructure and hardness both in overlapped zone and single pass ones for three kinds of ferrous metals with different content of carbon, cast iron, non-alloy structural steel and tool steel. High power fibre coupled diode laser Laserline LDF 3600-100 was used with robotic guided processing head equipped by the laser beam homogenizer that creates rectangular beam shape with uniform intensity distribution. Each sample was treated with identical process parameters - laser power, beam diameter, focus position, speed of motion and 40% spot overlap. Dimensions and structures of the remelted zone, zone of the partial melting, heat affected zone and base material were detected and measured by means of laser scanning and optical microscopes. Hardness progress in the vertical axis of the overlapped zone from remelted surface layer to base material was measured and compared with the hardness of the single spots. The most hardness growth was found for cast iron, the least for structural steel. Experiment results will be used to processing parameters optimization for each tested material separately.

  2. High power accelerator for environmental application

    Han, B.; Kim, J.K.; Kim, Y.R.; Kim, S.M.

    2011-01-01

    The problems of environmental damage and degradation of natural resources are receiving increasing attention throughout the world. The increased population, higher living standards, increased urbanization and enhanced industrial activities of humankind are all leading to degradation of the environment. Increasing urbanization has been accompanied by significant environmental pollution, given the seriousness of the situation and future risk of crises, there is an urgent need to develop the efficient technologies including economical treatment methods. Therefore, cost-effective treatment of the stack gases, wastewater and sludge containing refractory pollutant with electron beam is actively studied in EB TECH Co. Electron beam treatment of such hazardous wastes is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from radiolysis. However, to have advantages over existing processes, the electron beam process should have cost-effective and reliable in operation. Therefore high power accelerators (400kW~1MW) are developed for environmental application and they show the decrease in the cost of construction and operation of electron beam plant. In other way to reduce the cost for treatment, radical reactions accompanied by the other processes are introduced, and the synergistic effect upon the use of combined methods such as electron beam treatment with catalytic system, biological treatment and physico-chemical adsorption and others also show the improvement of the effect of electron beam treatment. (author)

  3. High-power pure blue laser diodes

    Ohta, M.; Ohizumi, Y.; Hoshina, Y.; Tanaka, T.; Yabuki, Y.; Goto, S.; Ikeda, M. [Development Center, Sony Shiroishi Semiconductor Inc., Miyagi (Japan); Funato, K. [Materials Laboratories, Sony Corporation, Kanagawa (Japan); Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, Kanagawa (Japan)

    2007-06-15

    We successfully developed high-power and long-lived pure blue laser diodes (LDs) having an emission wavelength of 440-450 nm. The pure-blue LDs were grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates. The dislocation density was successfully reduced to {proportional_to}10{sup 6} cm{sup -2} by optimizing the MOCVD growth conditions and the active layer structure. The vertical layer structure was designed to have an absorption loss of 4.9 cm{sup -1} and an internal quantum efficiency of 91%. We also reduced the operating current density to 6 kA/cm{sup 2} under 750 mW continuous-wave operation at 35 C by optimizing the stripe width to 12 {mu}m and the cavity length to 2000 {mu}m. The half lifetimes in constant current mode are estimated to be longer than 10000 h. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Improved Collectors for High Power Gyrotrons

    Ives, R. Lawrence; Singh, Amarjit; Read, Michael; Borchard, Philipp; Neilson, Jeff

    2009-01-01

    High power gyrotrons are used for electron cyclotron heating, current drive and parasitic mode suppression in tokamaks for fusion energy research. These devices are crucial for successful operation of many research programs around the world, including the ITER program currently being constructed in France. Recent gyrotron failures resulted from cyclic fatigue of the copper material used to fabricated the collectors. The techniques used to collect the spent beam power is common in many gyrotrons produced around the world. There is serious concern that these tubes may also be at risk from cyclic fatigue. This program addresses the cause of the collector failure. The Phase I program successfully demonstrated feasibility of a mode of operation that eliminates the cyclic operation that caused the failure. It also demonstrated that new material can provide increased lifetime under cyclic operation that could increase the lifetime by more than on order of magnitude. The Phase II program will complete that research and develop a collector that eliminates the fatigue failures. Such a design would find application around the world.

  5. High power accelerator for environmental application

    Han, B.; Kim, J. K.; Kim, Y. R.; Kim, S. M. [EB-TECH Co., Ltd., Yuseong-gu Daejeon (Korea, Republic of)

    2011-07-01

    The problems of environmental damage and degradation of natural resources are receiving increasing attention throughout the world. The increased population, higher living standards, increased urbanization and enhanced industrial activities of humankind are all leading to degradation of the environment. Increasing urbanization has been accompanied by significant environmental pollution, given the seriousness of the situation and future risk of crises, there is an urgent need to develop the efficient technologies including economical treatment methods. Therefore, cost-effective treatment of the stack gases, wastewater and sludge containing refractory pollutant with electron beam is actively studied in EB TECH Co. Electron beam treatment of such hazardous wastes is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from radiolysis. However, to have advantages over existing processes, the electron beam process should have cost-effective and reliable in operation. Therefore high power accelerators (400kW~1MW) are developed for environmental application and they show the decrease in the cost of construction and operation of electron beam plant. In other way to reduce the cost for treatment, radical reactions accompanied by the other processes are introduced, and the synergistic effect upon the use of combined methods such as electron beam treatment with catalytic system, biological treatment and physico-chemical adsorption and others also show the improvement of the effect of electron beam treatment. (author)

  6. Visible high power fiber coupled diode lasers

    Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

    2018-02-01

    In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

  7. High power accelerators and wastewater treatment

    Han, B.; Kim, J.K.; Kim, Y.R.; Kim, S.M.; Makaov, I.E.; Ponomarev, A.V.

    2006-01-01

    The problems of environmental damage and degradation of natural resources are receiving increasing attention throughout the world. The increased population, higher living standards, increased urbanization and enhanced industrial activities of humankind are all leading to degradation of the environment. Increasing urbanization has been accompanied by significant water pollution. Given the seriousness of the situation and future risk of crises, there is an urgent need to develop the water-efficient technologies including economical treatment methods of wastewater and polluted water. Therefore, cost-effective treatment of the municipal and industrial wastewater containing refractory pollutant with electron beam is actively studied in EB TECH Co.. Electron beam treatment of wastewater is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from water radiolysis (hydrated electron, OH free radical and H atom). However, to have advantages over existing processes, the electron beam process should have cost-effective and reliable in operation. Therefore high power accelerators (400kW∼1MW) are developed for environmental application and they show the decrease in the cost of construction and operation of electron beam plant. In other way to reduce the cost for wastewater treatment, radical reactions accompanied by the other processes are introduced, and the synergistic effect upon the use of combined methods such as electron beam treatment with ozonation, biological treatment and physico-chemical adsorption and others also show the improvement of the effect of electron beam treatment for the wastewater purification. (author)

  8. Water Vapour Propulsion Powered by a High-Power Laser-Diode

    Minami, Y.; Uchida, S.

    Most of the laser propulsion schemes now being proposed and developed assume neither power supplies nor on-board laser devices and therefore are bound to remote laser stations like a kite via a laser beam “string”. This is a fatal disadvantage for a space vehicle that flies freely though it is often said that no need of installing an energy source is an advantage of a laser propulsion scheme. The possibility of an independent laser propulsion space vehicle that carries a laser source and a power supply on board is discussed. This is mainly due to the latest development of high power laser diode (LD) technology. Both high specific impulse-low thrust mode and high thrust-low specific impulse mode can be selected by controlling the laser output by using vapour or water as a propellant. This mode change can be performed by switching between a high power continuous wave (cw), LD engine for high thrust with a low specific impulse mode and high power LD pumping Q-switched Nd:YAG laser engine for low thrust with the high specific impulse mode. This paper describes an Orbital Transfer Vehicle equipped with the above-mentioned laser engine system and fuel cell that flies to the Moon from a space platform or space hotel in Earth orbit, with cargo shipment from lunar orbit to the surface of the Moon, including the possibility of a sightseeing trip.

  9. Interaction of high power ultrashort laser pulses with plasmas

    Geissler, M.

    2000-12-01

    The invention of short laser-pulses has opened a vast application range from testing ultra high-speed semiconductor devices to precision material processing, from triggering and tracing chemical reactions to sophisticated surgical applications in opthalmology and neurosurgery. In physical science, ultrashort light pulses enable researchers to follow ultrafast relaxation processes in the microcosm on time scale never before accessible and study light-matter-interactions at unprecedented intensity levels. The aim of this thesis is to investigate the interaction of ultrashort high power laser pulses with plasmas for a broad intensity range. First the ionization of atoms with intense laser fields is investigated. For sufficient strong and low frequent laser pulses, electrons can be removed from the core by a tunnel process through a potential barrier formed by the electric field of the laser. This mechanism is described by a well-established theory, but the interaction of few-cycle laser pulses with atoms can lead to regimes where the tunnel theory loses its validity. This regime is investigated and a new description of the ionization is found. Although the ionization plays a major role in many high-energy laser processes, there exist no simple and complete model for the evolution of laser pulses in field-ionizing media. A new propagation equation and the polarization response for field-ionizing media are presented and the results are compared with experimental data. Further the interaction of high power laser radiation with atoms result in nonlinear response of the electrons. The spectrum of this induced nonlinear dipole moment reaches beyond visible wavelengths into the x-ray regime. This effect is known as high harmonic generation (HHG) and is a promising tool for the generation of coherent shot wavelength radiation, but the conversions are still not efficient enough for most practical applications. Phase matching schemes to overcome the limitation are discussed

  10. 14 CFR 101.25 - Operating limitations for Class 2-High Power Rockets and Class 3-Advanced High Power Rockets.

    2010-01-01

    ... Power Rockets and Class 3-Advanced High Power Rockets. 101.25 Section 101.25 Aeronautics and Space... OPERATING RULES MOORED BALLOONS, KITES, AMATEUR ROCKETS AND UNMANNED FREE BALLOONS Amateur Rockets § 101.25 Operating limitations for Class 2-High Power Rockets and Class 3-Advanced High Power Rockets. When operating...

  11. New Switched-Dual-Source Multilevel Inverter for Symmetrical and Asymmetrical Operation

    Kennedy Adinbo Aganah

    2018-04-01

    Full Text Available The increasing integration of large solar PV and wind farms into the power grid has fueled, over the past two decades, growing demands for high-power, high-voltage, utility-scale inverters. Multilevel inverters have emerged as the industry’s choice for megawatt-range inverters because of their reduced voltage stress, capability for generating an almost-sinusoidal voltage, built-in redundancy and other benefits. This paper presents a novel switched-source multilevel inverter (SS MLI architecture. This new inverter shows superior capabilities when compared to existing topologies. It has reduced voltage stress on the semiconductor, uses fewer switches (i.e., reduced size/weight/cost and exhibits increased efficiency. The proposed SS MLI is comprised of two voltage sources ( V 1 , V 2 and six switches. It is capable of generating five-level output voltage in symmetric mode (i.e., V 1 = V 2 and seven-level output voltage in asymmetric mode (i.e., V 1 ≠ V 2 . We present simulations results (using MATLAB®/Simulink® for five- and seven-level output voltages, and they strongly support the validity of the proposed inverter. These positive results are further supported experimentally using a laboratory prototype.

  12. Apparatus for testing semiconductor devices and capacitors

    York, R.A.

    1984-01-01

    An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

  13. Fabrication and application of amorphous semiconductor devices

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  14. Application of high power microwave vacuum electron devices

    Ding Yaogen; Liu Pukun; Zhang Zhaochuan; Wang Yong; Shen Bin

    2011-01-01

    High power microwave vacuum electron devices can work at high frequency, high peak and average power. They have been widely used in military and civil microwave electron systems, such as radar, communication,countermeasure, TV broadcast, particle accelerators, plasma heating devices of fusion, microwave sensing and microwave heating. In scientific research, high power microwave vacuum electron devices are used mainly on high energy particle accelerator and fusion research. The devices include high peak power klystron, CW and long pulse high power klystron, multi-beam klystron,and high power gyrotron. In national economy, high power microwave vacuum electron devices are used mainly on weather and navigation radar, medical and radiation accelerator, TV broadcast and communication system. The devices include high power pulse and CW klystron, extended interaction klystron, traveling wave tube (TWT), magnetron and induced output tube (IOT). The state of art, common technology problems and trends of high power microwave vacuum electron devices are introduced in this paper. (authors)

  15. The Jefferson Lab High Power Light Source

    James R. Boyce

    2006-01-01

    Jefferson Lab has designed, built and operated two high average power free-electron lasers (FEL) using superconducting RF (SRF) technology and energy recovery techniques. Between 1999-2001 Jefferson Lab operated the IR Demo FEL. This device produced over 2 kW in the mid-infrared, in addition to producing world record average powers in the visible (50 W), ultraviolet (10 W) and terahertz range (50 W) for tunable, short-pulse (< ps) light. This FEL was the first high power demonstration of an accelerator configuration that is being exploited for a number of new accelerator-driven light source facilities that are currently under design or construction. The driver accelerator for the IR Demo FEL uses an Energy Recovered Linac (ERL) configuration that improves the energy efficiency and lowers both the capital and operating cost of such devices by recovering most of the power in the spent electron beam after optical power is extracted from the beam. The IR Demo FEL was de-commissioned in late 2001 for an upgraded FEL for extending the IR power to over 10 kW and the ultraviolet power to over 1 kW. The FEL Upgrade achieved 10 kW of average power in the mid-IR (6 microns) in July of 2004, and its IR operation currently is being extended down to 1 micron. In addition, we have demonstrated the capability of on/off cycling and recovering over a megawatt of electron beam power without diminishing machine performance. A complementary UV FEL will come on-line within the next year. This paper presents a summary of the FEL characteristics, user community accomplishments with the IR Demo, and planned user experiments.

  16. Design of DSP-based high-power digital solar array simulator

    Zhang, Yang; Liu, Zhilong; Tong, Weichao; Feng, Jian; Ji, Yibo

    2013-12-01

    To satisfy rigid performance specifications, a feedback control was presented for zoom optical lens plants. With the increasing of global energy consumption, research of the photovoltaic(PV) systems get more and more attention. Research of the digital high-power solar array simulator provides technical support for high-power grid-connected PV systems research.This paper introduces a design scheme of the high-power digital solar array simulator based on TMS320F28335. A DC-DC full-bridge topology was used in the system's main circuit. The switching frequency of IGBT is 25kHz.Maximum output voltage is 900V. Maximum output current is 20A. Simulator can be pre-stored solar panel IV curves.The curve is composed of 128 discrete points .When the system was running, the main circuit voltage and current values was feedback to the DSP by the voltage and current sensors in real-time. Through incremental PI,DSP control the simulator in the closed-loop control system. Experimental data show that Simulator output voltage and current follow a preset solar panels IV curve. In connection with the formation of high-power inverter, the system becomes gridconnected PV system. The inverter can find the simulator's maximum power point and the output power can be stabilized at the maximum power point (MPP).

  17. Semiconductor annealing

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  18. Review of wide band-gap semiconductors technology

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  19. Advanced laser architectures for high power eyesafe illuminators

    Baranova, N.; Pati, B.; Stebbins, K.; Bystryak, I.; Rayno, M.; Ezzo, K.; DePriest, C.

    2018-02-01

    Q-Peak has demonstrated a novel pulsed eyesafe laser architecture operating with >50 mJ pulse energies at Pulse Repetition Frequencies (PRFs) as high as 320 Hz. The design leverages an Optical Parametric Oscillator (OPO) and Optical Parametric Amplifier (OPA) geometry, which provides the unique capability for high power in a comparatively compact package, while also offering the potential for additional eyesafe power scaling. The laser consists of a Commercial Off-the-Shelf (COTS) Q-switched front-end seed laser to produce pulse-widths around 10 ns at 1.06-μm, which is then followed by a pair of Multi-Pass Amplifier (MPA) architectures (comprised of side-pumped, multi-pass Nd:YAG slabs with a compact diode-pump-array imaging system), and finally involving two sequential nonlinear optical conversion architectures for transfer into the eyesafe regime. The initial seed beam is first amplified through the MPA, and then split into parallel optical paths. An OPO provides effective nonlinear conversion on one optical path, while a second MPA further amplifies the 1.06-μm beam for use in pumping an OPA on the second optical path. These paths are then recombined prior to seeding the OPA. Each nonlinear conversion subsystem utilizes Potassium Titanyl Arsenate (KTA) for effective nonlinear conversion with lower risk to optical damage. This laser architecture efficiently produces pulse energies of >50 mJ in the eyesafe band at PRFs as high as 320 Hz, and has been designed to fit within a volume of 4,500 in3 (0.074 m3 ). We will discuss theoretical and experimental details of the nonlinear optical system for achieving higher eyesafe powers.

  20. High Power Flex-Propellant Arcjet Performance

    Litchford, Ron J.

    2011-01-01

    implied nearly frozen flow in the nozzle and yielded performance ranges of 800-1100 sec for hydrogen and 400-600 sec for ammonia. Inferred thrust-to-power ratios were in the range of 30-10 lbf/MWe for hydrogen and 60-20 lbf/MWe for ammonia. Successful completion of this test series represents a fundamental milestone in the progression of high power arcjet technology, and it is hoped that the results may serve as a reliable touchstone for the future development of MW-class regeneratively-cooled flex-propellant plasma rockets.

  1. High power infrared QCLs: advances and applications

    Patel, C. Kumar N.

    2012-01-01

    QCLs are becoming the most important sources of laser radiation in the midwave infrared (MWIR) and longwave infrared (LWIR) regions because of their size, weight, power and reliability advantages over other laser sources in the same spectral regions. The availability of multiwatt RT operation QCLs from 3.5 μm to >16 μm with wall plug efficiency of 10% or higher is hastening the replacement of traditional sources such as OPOs and OPSELs in many applications. QCLs can replace CO2 lasers in many low power applications. Of the two leading groups in improvements in QCL performance, Pranalytica is the commercial organization that has been supplying the highest performance QCLs to various customers for over four year. Using a new QCL design concept, the non-resonant extraction [1], we have achieved CW/RT power of >4.7 W and WPE of >17% in the 4.4 μm - 5.0 μm region. In the LWIR region, we have recently demonstrated QCLs with CW/RT power exceeding 1 W with WPE of nearly 10 % in the 7.0 μm-10.0 μm region. In general, the high power CW/RT operation requires use of TECs to maintain QCLs at appropriate operating temperatures. However, TECs consume additional electrical power, which is not desirable for handheld, battery-operated applications, where system power conversion efficiency is more important than just the QCL chip level power conversion efficiency. In high duty cycle pulsed (quasi-CW) mode, the QCLs can be operated without TECs and have produced nearly the same average power as that available in CW mode with TECs. Multiwatt average powers are obtained even in ambient T>70°C, with true efficiency of electrical power-to-optical power conversion being above 10%. Because of the availability of QCLs with multiwatt power outputs and wavelength range covering a spectral region from ~3.5 μm to >16 μm, the QCLs have found instantaneous acceptance for insertion into multitude of defense and homeland security applications, including laser sources for infrared

  2. The JLab high power ERL light source

    Neil, G.R.; Behre, C.; Benson, S.V.

    2006-01-01

    discuss some of the discoveries we have made concerning the physics performance, design optimization, and operational limitations of such a first generation high power ERL light source

  3. The JLab high power ERL light source

    G.R. Neil; C. Behre; S.V. Benson; M. Bevins; G. Biallas; J. Boyce; J. Coleman; L.A. Dillon-Townes; D. Douglas; H.F. Dylla; R. Evans; A. Grippo; D. Gruber; J. Gubeli; D. Hardy; C. Hernandez-Garcia; K. Jordan; M.J. Kelley; L. Merminga; J. Mammosser; W. Moore; N. Nishimori; E. Pozdeyev; J. Preble; R. Rimmer; Michelle D. Shinn; T. Siggins; C. Tennant; R. Walker; G.P. Williams and S. Zhang

    2005-03-19

    concerning the physics performance, design optimization, and operational limitations of such a first generation high power ERL light source.

  4. Magnetic semiconductors

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  5. A Single-Stage High-Power-Factor Light-Emitting Diode (LED Driver with Coupled Inductors for Streetlight Applications

    Chun-An Cheng

    2017-02-01

    Full Text Available This paper presents and implements a single-stage high-power-factor light-emitting diode (LED driver with coupled inductors, suitable for streetlight applications. The presented LED driver integrates an interleaved buck-boost power factor correction (PFC converter with coupled inductors and a half-bridge-type series-resonant converter cascaded with a full-bridge rectifier into a single-stage power conversion circuit. Coupled inductors inside the interleaved buck-boost PFC converter sub-circuit are designed to operate in discontinuous conduction mode (DCM for achieving input-current shaping, and the half-bridge-type series resonant converter cascaded with a full-bridge rectifier is designed for obtaining zero-voltage switching (ZVS on two power switches to reduce their switching losses. Analysis of operational modes and design equations for the presented LED driver are described and included. In addition, the presented driver features a high power factor, low total harmonic distortion (THD of input current, and soft switching. Finally, a prototype driver is developed and implemented to supply a 165-W-rated LED streetlight module with utility-line input voltages ranging from 210 to 230 V. Experimental results demonstrate that high power factor (>0.99, low utility-line current THD (<7%, low-output voltage ripples (<1%, low-output current ripples (<10%, and high circuit efficiency (>90% are obtained in the presented single-stage driver for LED streetlight applications.

  6. Semiconductor Laser Measurements Laboratory

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  7. Photonic Switching Devices Using Light Bullets

    Goorjian, Peter M. (Inventor)

    1999-01-01

    A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

  8. EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

    Weinelt, Martin; von Oppen, Felix

    2012-10-01

    metal surfaces, focusing on electronic and vibrational spectroscopy in one case and scanning tunneling microscopy studies in the other. Original research articles describe results in many aspects of the field, including: Self-assembly, self-organization, and controlled growth of molecular layers on various substrates. Highly-ordered arrays provide model systems with extraordinary structural properties, allowing one to adjust interactions between molecules and between molecule and substrate, and can be robustly prepared from solution, an essential prerequisite for applications. Conformational or electronic switching of molecules adsorbed at metal and semiconductor surfaces. These studies highlight the elementary processes governing molecular switching at surfaces as well as the wide range of possible stimuli. Carbon-based substrates such as graphene or carbon nanotubes. These substrates are attractive due to their effective two-dimensionality which implies that switching of adsorbed molecules can effect a significant back-action on the substrate. Mechanisms of conformational switching. Several contributions study the role of electron-vibron coupling and heating in current-induced conformational switching. We hope that the collection of articles presented here will stimulate and encourage researchers in surface physics and interfacial chemistry to contribute to the still emerging field of molecular switches at surfaces. We wish to acknowledge the support and input from many colleagues in preparing this special section. A significant part of this work has been conducted in the framework of the Sonderforschungsbereich 658 Elementary Processes in Molecular Switches at Surfaces of the Deutsche Forschungsgemeinschaft, to which we are grateful for financial support. Molecular surfaces at switches contents Molecular switches at surfacesMartin Weinelt and Felix von Oppen Optically and thermally induced molecular switching processes at metal surfacesPetra Tegeder Effects of

  9. Load Torque Compensator for Model Predictive Direct Current Control in High Power PMSM Drive Systems

    Preindl, Matthias; Schaltz, Erik

    2011-01-01

    The widely used cascade speed and torque controllers have a limited control performance in most high power applications due to the low switching frequency of power electronic converters and the convenience to avoid speed overshoots and oscillations for lifetime considerations. Model Predictive...... Direct Current Control (MPDCC) leads to an increase of torque control performance taking into account the discrete nature of inverters but temporary offsets and poor responses to load torque variations are still issues in speed control. A load torque estimator is proposed in this paper in order...

  10. Load Torque Compensator for Model Predictive Direct Current Control in High Power PMSM Drive Systems

    Preindl, Matthias; Schaltz, Erik

    2010-01-01

    In drive systems the most used control structure is the cascade control with an inner torque, i.e. current and an outer speed control loop. The fairly small converter switching frequency in high power applications, e.g. wind turbines lead to modest speed control performance. An improvement bring...... the use of a current controller which takes into account the discrete states of the inverter, e.g. DTC or a more modern approach: Model Predictive Direct Current Control (MPDCC). Moreover overshoots and oscillations in the speed are not desired in many applications, since they lead to mechanical stress...

  11. High-frequency high-voltage high-power DC-to-DC converters

    Wilson, T. G.; Owen, H. A.; Wilson, P. M.

    1982-09-01

    A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

  12. Welding with high power fiber lasers - A preliminary study

    Quintino, L.; Costa, A.; Miranda, R.; Yapp, D.; Kumar, V.; Kong, C.J.

    2007-01-01

    The new generation of high power fiber lasers presents several benefits for industrial purposes, namely high power with low beam divergence, flexible beam delivery, low maintenance costs, high efficiency and compact size. This paper presents a brief review of the development of high power lasers, and presents initial data on welding of API 5L: X100 pipeline steel with an 8 kW fiber laser. Weld bead geometry was evaluated and transition between conduction and deep penetration welding modes was investigated

  13. High power-efficient asynchronous SAR ADC for IoT devices

    Zhang, Beichen; Yao, Bingbing; Liu, Liyuan; Liu, Jian; Wu, Nanjian

    2017-10-01

    This paper presents a power-efficient 100-MS/s, 10-bit asynchronous successive approximation register (SAR) ADC. It includes an on-chip reference buffer and the total power dissipation is 6.8 mW. To achieve high performance with high power-efficiency in the proposed ADC, bootstrapped switch, redundancy, set-and-down switching approach, dynamic comparator and dynamic logic techniques are employed. The prototype was fabricated using 65 nm standard CMOS technology. At a 1.2-V supply and 100 MS/s, the ADC achieves an SNDR of 56.2 dB and a SFDR of 65.1 dB. The ADC core consumes only 3.1 mW, resulting in a figure of merit (FOM) of 30.27 fJ/conversionstep and occupies an active area of only 0.009 mm2.

  14. High-power piezo drive amplifier for large stack and PFC applications

    Clingman, Dan J.; Gamble, Mike

    2001-08-01

    This paper describes the continuing development of Boeing High Power Piezo Drive Amplifiers. Described is the development and testing of a 1500 Vpp, 8 amp switching amplifier. This amplifier is used to drive a piezo stack driven rotor blade trailing edge flap on a full size helicopter. Also discuss is a switching amplifier designed to drive a Piezo Fiber Composite (PFC) active twist rotor blade. This amplifier was designed to drive the PFC material at 2000 Vpp and 0.5 amps. These amplifiers recycle reactive energy, allowing for a power and weight efficient amplifier design. This work was done in conjunction with the DARPA sponsored Phase II Smart Rotor Blade program and the NASA Langley Research Center sponsored Active Twist Rotor (ATR) blade program.

  15. Modeling and analysis of the Rimfire gas switch

    Gahl, John M.; Kemp, Mark A.; Struve, Kenneth William; Curry, Randy D.; McDonald, Ken F.

    2005-01-01

    Many accelerators at Sandia National Laboratories utilize the Rimfire gas switch for high-voltage, high-power switching. Future accelerators will have increased performance requirements for switching elements. When designing improved versions of the Rimfire switch, there is a need for quick and accurate simulation of the electrical effects of geometry changes. This paper presents an advanced circuit model of the Rimfire switch that can be used for these simulations. The development of the model is shown along with comparisons to past models and experimental results.

  16. All-optical devices for ultrafast packet switching

    Dorren, H.J.S.; HerreraDorren, J.; Raz, O.

    2007-01-01

    We discuss integrated devices for all-optical packet switching. We focus on monolithically integrated all-optical flip-flops, ultra-fast semiconductor based wavelength converters and explain the operation principles. Finally, a 160 Gb/s all-optical packet switching experiment over 110 km of field...

  17. Semiconductor laser shearing interferometer

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  18. High-Power Dual-End-Pumped Actively Q-Switched Ho:YAG Ceramic Laser

    Duan, Xiao-Ming; Yuan, Jin-He; Yao, Bao-Quan; Dai, Tong-Yu; Li, Jiang; Pan, Yu-Bai

    2015-10-01

    Not Available Supported by the National Natural Science Foundation of China under Grant Nos 61308009, 61405047 and 50990301, the China Postdoctoral Science Foundation Funded Project under Grant No 2015T80339, the Fundamental Research Funds for the Central Universities under Grant No HIT.NSRIF.2015042, and the Science Fund for Outstanding Youths of Heilongjiang Province under Grant No JQ201310.

  19. The 120V 20A PWM switch for applications in high power distribution

    Borelli, V.; Nimal, W.

    1989-08-01

    A 20A/120VDC (voltage direct current) PWM (Pulse Width Modulation) Solid State Power Controller (SSPC) developed under ESA contract to be used in the power distribution system of Columbus is described. The general characteristics are discussed and the project specification defined. The benefits of a PWM solution over a more conventional approach, for the specific application considered are presented. An introduction to the SSPC characteristics and a functional description are presented.

  20. A high-power magnetically switched superconducting rectifier operating at 5 Hz

    Mulder, G.B.J.; Krooshoop, Hendrikus J.G.; Nijhuis, Arend; ten Kate, Herman H.J.; van de Klundert, L.J.M.

    1987-01-01

    Above a certain current level, the use of a superconducting rectifier as a cryogenic current source offers advantages compared to the use of a power supply at room temperature which requires large current feed-throughs into the cryostat. In some cases, the power of such a rectifier is immaterial,

  1. In-volume heating using high-power laser diodes

    Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

    2015-01-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface

  2. High-power sputtering employed for film deposition

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  3. Improved cutting performance in high power laser cutting

    Olsen, Flemming Ove

    2003-01-01

    Recent results in high power laser cutting especially with focus on cutting of mild grade steel types for shipbuilding are described.......Recent results in high power laser cutting especially with focus on cutting of mild grade steel types for shipbuilding are described....

  4. Ion implantation methods for semiconductor substrates

    Matsushita, T.; Mamine, T.; Hayashi, H.; Nishiyama, K.

    1980-01-01

    A method of ion implantation for controlling the life time of minority carriers in a semiconductor substrate and hence to reduce the temperature dependency of the life time, comprises implanting iron ions into an N type semiconductor substrate with a dosage of 10 10 to 10 15 ions cm -2 , and then heat-treating the implanted substrate at 850 0 to 1250 0 C. The method is applicable to the production of diodes, transistors, Si controlled rectifiers and gate controlled switching devices. (author)

  5. A Witricity-Based High-Power Device for Wireless Charging of Electric Vehicles

    Zhongyu Dai

    2017-03-01

    Full Text Available In this paper, a Witricity-based high-power device is proposed for wireless charging of electric vehicles. According to the specific requirements of three-stage charging for electric vehicles, four compensation modes of the Witricity system are analyzed by the Loosely Coupled Theory among transformer coils and the Substitution Theorem in circuit theory. In addition, when combining voltage withstand levels, the current withstand capability, the switching frequency of electronic switching tubes, and the features of the resonant circuit, the series-parallel (SP compensation mode is selected as the best compensation mode for matching the capacitor of the system. The performances of coils with different ferrite core arrangements are compared by simulations and models. The feasibility of the system is verified theoretically and the system functions are evaluated by the joint simulation of Simplorer and Maxwell. Finally, a Witricity-based high-power device is proposed as designed, and the correctness of theoretical analyses and simulation results are verified.

  6. A High Power Density Integrated Charger for Electric Vehicles with Active Ripple Compensation

    Liwen Pan

    2015-01-01

    Full Text Available This paper suggests a high power density on-board integrated charger with active ripple compensation circuit for electric vehicles. To obtain a high power density and high efficiency, silicon carbide devices are reported to meet the requirement of high-switching-frequency operation. An integrated bidirectional converter is proposed to function as AC/DC battery charger and to transfer energy between battery pack and motor drive of the traction system. In addition, the conventional H-bridge circuit suffers from ripple power pulsating at second-order line frequency, and a scheme of active ripple compensation circuit has been explored to solve this second-order ripple problem, in which a pair of power switches shared traction mode, a ripple energy storage capacitor, and an energy transfer inductor. Simulation results in MATLAB/Simulink validated the eligibility of the proposed topology. The integrated charger can work as a 70 kW motor drive circuit or a converter with an active ripple compensation circuit for 3 kW charging the battery. The impact of the proposed topology and control strategy on the integrated charger power losses, efficiency, power density, and thermal performance has also been analysed and simulated.

  7. Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices

    Almasoudi, Fahad M.; Alatawi, Khaled S.; Matin, Mohammad

    2016-09-01

    The development of Wide band gap (WBG) power devices has been attracted by many commercial companies to be available in the market because of their enormous advantages over the traditional Si power devices. An example of WBG material is SiC, which offers a number of advantages over Si material. For example, SiC has the ability of blocking higher voltages, reducing switching and conduction losses and supports high switching frequency. Consequently, SiC power devices have become the affordable choice for high frequency and power application. The goal of this paper is to study the performance of 4.5 kW, 200 kHz, 600V DC-DC boost converter operating in continuous conduction mode (CCM) for PV applications. The switching behavior and turn on and turn off losses of different switching power devices such as SiC MOSFET, SiC normally ON JFET and Si MOSFET are investigated and analyzed. Moreover, a detailed comparison is provided to show the overall efficiency of the DC-DC boost converter with different switching power devices. It is found that the efficiency of SiC power switching devices are higher than the efficiency of Si-based switching devices due to low switching and conduction losses when operating at high frequencies. According to the result, the performance of SiC switching power devices dominate the conventional Si power devices in terms of low losses, high efficiency and high power density. Accordingly, SiC power switching devices are more appropriate for PV applications where a converter of smaller size with high efficiency, and cost effective is required.

  8. Switching Phenomena

    Stanley, H. E.; Buldyrev, S. V.; Franzese, G.; Havlin, S.; Mallamace, F.; Mazza, M. G.; Kumar, P.; Plerou, V.; Preis, T.; Stokely, K.; Xu, L.

    One challenge of biology, medicine, and economics is that the systems treated by these serious scientific disciplines can suddenly "switch" from one behavior to another, even though they possess no perfect metronome in time. As if by magic, out of nothing but randomness one finds remarkably fine-tuned processes in time. The past century has, philosophically, been concerned with placing aside the human tendency to see the universe as a fine-tuned machine. Here we will address the challenge of uncovering how, through randomness (albeit, as we shall see, strongly correlated randomness), one can arrive at some of the many temporal patterns in physics, economics, and medicine and even begin to characterize the switching phenomena that enable a system to pass from one state to another. We discuss some applications of correlated randomness to understanding switching phenomena in various fields. Specifically, we present evidence from experiments and from computer simulations supporting the hypothesis that water's anomalies are related to a switching point (which is not unlike the "tipping point" immortalized by Malcolm Gladwell), and that the bubbles in economic phenomena that occur on all scales are not "outliers" (another Gladwell immortalization).

  9. heat flow in a finite isolated pulsed avalanche semiconductor diode

    ES Obe

    1981-03-01

    Mar 1, 1981 ... high-power high-efficiency avalanche semiconductor devices. The ... computed, and useful practical design curves for a specified operation .... iv. For spherical shells of radius, ρ(x,y,z) = √x2+y2+z2. > R, the heat source.

  10. The Impact of Power Switching Devices on the Thermal Performance of a 10 MW Wind Power NPC Converter

    Ke Ma

    2012-07-01

    Full Text Available Power semiconductor switching devices play an important role in the performance of high power wind energy generation systems. The state-of-the-art device choices in the wind power application as reported in the industry include IGBT modules, IGBT press-pack and IGCT press-pack. Because of significant deviation in the packaging structure, electrical characteristics, as well as thermal impedance, these available power switching devices may have various thermal cycling behaviors, which will lead to converter solutions with very different cost, size and reliability performance. As a result, this paper aimed to investigate the thermal related characteristics of some important power switching devices. Their impact on the thermal cycling of a 10 MW three-level Neutral-Point-Clamped wind power converter is then evaluated under various operating conditions; the main focus will be on the grid connected inverter. It is concluded that the thermal performances of the 3L-NPC wind power converter can be significantly changed by the power device technology as well as their parallel configurations.

  11. Semiconductor nanostructures

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  12. Experiments on high power EB evaporation of niobium

    Kandaswamy, E.; Bhardwaj, R.L.; Ram Gopal; Ray, A.K.; Kulgod, S.V.

    2002-01-01

    Full text: The versatility of electron beam evaporation makes the deposition of many new and unusual materials possible. This technique offers freedom from contamination and precise control. High power electron guns are especially used for obtaining high evaporation rates for large area coatings. This paper deals with the coating experiments carried out on an indigenously developed high power strip electron gun with niobium as evaporant at 40 kW on S.S. substrate. The practical problems of conditioning the gun and venting the vacuum system after the high power operation are also discussed. The coating rate was calculated by weight difference method

  13. Design of high power feedthrough for High Power Industrial Accelerator (HPIA)

    Soni, Rakesh Kumar; Kumar, Abhay; Dwivedi, Jishnu; Kumar, Pankaj; Goswami, S.G.

    2011-01-01

    This paper reports the design, assembly and dismantling and maintenance of a feedthrough for High Power Industrial Accelerator (HPIA). It has been designed to serve three purposes. It provides electrical insulation between primary windings (at ∼ 2.5 kV) and cover flange (at ground potential) with the help of Nylon bushes. It also ensures leak tightness for SF 6 gas filled inside the vessel at 10 bar. It also provides sealing for water connectors between the primary winding and secondary winding. The key function of this feedthrough is to supply ∼ 800 A of current to the primary circuit. Technical requirement/constraint is leak tightness and electrical isolation of feedthrough. This feedthrough will be connected to the primary windings inside the vessel. Current will flow through a copper tube conductor which is at a potential of ∼ 800 V. Inside the tube water is flowing. Inlet water temperature is ∼ 30℃. Flow rate of water is 35 litres/minute at 6 kg/cm 2 pressure to remove the heat losses. (author)

  14. High-Temperature, Wirebondless, Ultra-Compact Wide Bandgap Power Semiconductor Modules for Space Power Systems, Phase I

    National Aeronautics and Space Administration — Silicon carbide (SiC) and other wide band-gap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and...

  15. Fundamentals of semiconductor devices

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  16. High-power explosive magnetic energy sources for thermonuclear and physical applications (overview)

    Chernyshev, V K [All-Russian Scientific Institute of Experimental Physics, Sarov (Russian Federation)

    1997-12-31

    High-power energy sources unavailable up to now are needed to carry out any one project on inertially confined controlled thermonuclear fusion (CTF). Considerable advances have been made in the area of explosive magnetic generators (EGG) as for their output characteristics (high power combined with high energy content). To develop the concept of magnetic cumulation proposed by A.D. Sakharov in 1951, two new approaches to increasing EMC fast operation by two orders (from tens of microseconds to tenths of microseconds) and increasing at the same time the current pulse amplitude by more than one order, were proposed at VNIIEF in the early sixties. The concept aimed at solving the CTF problem by target magnetic compression (MACO) under the effect of an fast-increasing field was proposed (1972) based on VNIIEF achievements, discussed (1976) at the USSR Academy of Sciences and published (1979). The key physical questions are analyzed, the problems to be solved are posed and the results achieved in the experiments with fast-operating high-power EMGs, fast-opening switches, transmitting lines and insulation systems are discussed here. The results obtained in experiments on liner acceleration as well as those on preliminary plasma magnetization and heating, carried out at the constructed EMGs, are discussed briefly. The conclusion is reached that the MACO system is the most suitable one to provide the ignition because the designing of high-power energy sources to be used in this system is practically complete and the concept itself does not need any intermediate transformations of one type of energy into another always accompanied by a decrease in total efficiency. (author). 4 tabs., 14 figs., 21 refs.

  17. Overview on the high power excimer laser technology

    Liu, Jingru

    2013-05-01

    High power excimer laser has essential applications in the fields of high energy density physics, inertial fusion energy and industry owing to its advantages such as short wavelength, high gain, wide bandwidth, energy scalable and repetition operating ability. This overview is aimed at an introduction and evaluation of enormous endeavor of the international high power excimer laser community in the last 30 years. The main technologies of high power excimer laser are reviewed, which include the pumping source technology, angular multiplexing and pulse compressing, beam-smoothing and homogenous irradiation, high efficiency and repetitive operation et al. A high power XeCl laser system developed in NINT of China is described in detail.

  18. High Power Room Temperature Terahertz Local Oscillator, Phase I

    National Aeronautics and Space Administration — We propose to build a high-power, room temperature compact continuous wave terahertz local oscillator for driving heterodyne receivers in the 1-5 THz frequency...

  19. Advanced Capacitors for High-Power Applications, Phase I

    National Aeronautics and Space Administration — As the consumer and industrial requirements for compact, high-power-density, electrical power systems grow substantially over the next decade; there will be a...

  20. High Power Uplink Amplifier for Deep Space Communications, Phase II

    National Aeronautics and Space Administration — Critical to the success of delivering on the promise of deep space optical communications is the creation of a stable and reliable high power multichannel optical...

  1. High Power Uplink Amplifier for Deep Space Communications, Phase I

    National Aeronautics and Space Administration — Critical to the success of delivering on the promise of deep space optical communications is the creation of a stable and reliable high power multichannel optical...

  2. Controlled Quantum Operations of a Semiconductor Three-Qubit System

    Li, Hai-Ou; Cao, Gang; Yu, Guo-Dong; Xiao, Ming; Guo, Guang-Can; Jiang, Hong-Wen; Guo, Guo-Ping

    2018-02-01

    In a specially designed semiconductor device consisting of three capacitively coupled double quantum dots, we achieve strong and tunable coupling between a target qubit and two control qubits. We demonstrate how to completely switch on and off the target qubit's coherent rotations by presetting two control qubits' states. A Toffoli gate is, therefore, possible based on these control effects. This research paves a way for realizing full quantum-logic operations in semiconductor multiqubit systems.

  3. High-power microwave LDMOS transistors for wireless data transmission technologies (Review)

    Kuznetsov, E. V.; Shemyakin, A. V.

    2010-01-01

    The fields of the application, structure, fabrication, and packaging technology of high-power microwave LDMOS transistors and the main advantages of these devices were analyzed. Basic physical parameters and some technology factors were matched for optimum device operation. Solid-state microwave electronics has been actively developed for the last 10-15 years. Simultaneously with improvement of old devices, new devices and structures are actively being adopted and developed and new semiconductor materials are being commercialized. Microwave LDMOS technology is in demand in such fields as avionics, civil and military radars, repeaters, base stations of cellular communication systems, television and broadcasting transmitters, and transceivers for high-speed wireless computer networks (promising Wi-Fi and Wi-Max standards).

  4. Graphene electric double layer capacitor with ultra-high-power performance

    Miller, John R.; Outlaw, R.A.; Holloway, B.C.

    2011-01-01

    We have demonstrated, for the first time, efficient 120 Hz filtering by an electric double layer capacitor (EDLC). The key to this ultra-high-power performance is electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized both electronic and ionic resistance and produced capacitors having RC time-constants of less than 200 μs. Significantly, graphene nanosheets have a preponderance of exposed edge planes that greatly increase stored charge over designs relying on basal plane surfaces. Collectively these factors make vertically oriented graphene nanosheet electrodes ideally suited for producing high-frequency EDLCs. Capacitors constructed with these electrodes are predicted to be significantly smaller than aluminum electrolyte capacitors that they could functionally replace plus be manufactured using standard semiconductor process equipment, creating interesting commercial opportunities.

  5. Atmospheric Propagation and Combining of High-Power Lasers

    2015-09-08

    Brightness-scaling potential of actively phase- locked solid state laser arrays,” IEEE J. Sel. Topics Quantum Electron., vol. 13, no. 3, pp. 460–472, May...attempting to phase- lock high-power lasers, which is not encountered when phase- locking low-power lasers, for example mW power levels. Regardless, we...technology does not currently exist. This presents a challenging problem when attempting to phase- lock high-power lasers, which is not encountered when

  6. Broadband and High power Reactive Jamming Resilient Wireless Communication

    2017-10-21

    Broadband and High -power Reactive Jamming Resilient Wireless Communication The views, opinions and/or findings contained in this report are those of... available in extremely hostile environments, where FHSS and DSSS are completely defeated by a broadband and high -power reactive jammer. b. Wireless...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6. AUTHORS

  7. High power laser downhole cutting tools and systems

    Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

    2015-01-20

    Downhole cutting systems, devices and methods for utilizing 10 kW or more laser energy transmitted deep into the earth with the suppression of associated nonlinear phenomena. Systems and devices for the laser cutting operations within a borehole in the earth. These systems and devices can deliver high power laser energy down a deep borehole, while maintaining the high power to perform cutting operations in such boreholes deep within the earth.

  8. Design of measurement equipment for high power laser beam shapes

    Hansen, K. S.; Olsen, F. O.; Kristiansen, Morten

    2013-01-01

    To analyse advanced high power beam patterns, a method, which is capable of analysing the intensity distribution in 3D is needed. Further a measuring of scattered light in the same system is preferred. This requires a high signal to noise ratio. Such a system can be realised by a CCD-chip impleme...... by a commercial product has been done. The realised system might suffer from some thermal drift at high power; future work is to clarify this....

  9. Analyses of resource reservation schemes for optical burst switching networks

    Solanska, Michaela; Scholtz, Lubomir; Ladanyi, Libor; Mullerova, Jarmila

    2017-12-01

    With growing demands of Internet Protocol services for transmission capacity and speed, the Optical Burst Switching presents the solution for future high-speed optical networks. Optical Burst Switching is a technology for transmitting large amounts of data bursts through a transparent optical switching network. To successfully transmit bursts over OBS network and reach the destination node, resource reservation schemes have to be implemented to allocate resources and configure optical switches for that burst at each node. The one-way resource reservation schemes and the performance evaluation of reservation schemes are presented. The OBS network model is performed using OMNeT++ simulation environment. During the reservation of network resources, the optical cross-connect based on semiconductor optical amplifier is used as the core node. Optical switches based on semiconductor optical amplifiers are a promising technology for high-speed optical communication networks.

  10. Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

    Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

    Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

  11. High power density dc/dc converter: Selection of converter topology

    Divan, Deepakraj M.

    1990-01-01

    The work involved in the identification and selection of a suitable converter topology is described. Three new dc/dc converter topologies are proposed: Phase-Shifted Single Active Bridge DC/DC Converter; Single Phase Dual Active Bridges DC/DC Converter; and Three Phase Dual Active Bridges DC/DC Converter (Topology C). The salient features of these topologies are: (1) All are minimal in structure, i.e., each consists of an input and output bridge, input and output filter and a transformer, all components essential for a high power dc/dc conversion process; (2) All devices of both the bridges can operate under near zero-voltage conditions, making possible a reduction of device switching losses and hence, an increase in switching frequency; (3) All circuits operate at a constant frequency, thus simplifying the task of the magnetic and filter elements; (4) Since, the leakage inductance of the transformer is used as the main current transfer element, problems associated with the diode reverse recovery are eliminated. Also, this mode of operation allows easy paralleling of multiple modules for extending the power capacity of the system; (5) All circuits are least sensitive to parasitic impedances, infact the parasitics are efficently utilized; and (6) The soft switching transitions, result in low electromagnetic interference. A detailed analysis of each topology was carried out. Based on the analysis, the various device and component ratings for each topology operating at an optimum point, and under the given specifications, are tabulated and discussed.

  12. Development of High Power Vacuum Tubes for Accelerators and Plasma Heating

    Srivastava, Vishnu

    2012-11-01

    High pulsed power magnetrons and klystrons for medical and industrial accelerators, and high CW power klystrons and gyrotrons for plasma heating in tokamak, are being developed at CEERI. S-band 2.0MW pulsed tunable magnetrons of centre frequency 2856MHz and 2998 MHz were developed, and S-band 2.6MW pulsed tunable magnetron is being developed for medical LINAC, and 3MW pulsed tunable magnetron is being developed for industrial accelerator. S-band (2856MHz), 5MW pulsed klystron was developed for particle accelerator, and S-band 6MW pulsed klystron is under development for 10MeV industrial accelerator. 350MHz, 100kW (CW) klystron is being developed for proton accelerator, and C-band 250kW (CW) klystron is being developed for plasma heating. 42GHz, 200kW (CW/Long pulse) gyrotron is under development for plasma heating. Plasma filled tubes are also being developed for switching. 25kV/1kA and 40kV/3kA thyratrons were developed for high voltage high current switching in pulse modulators for magnetrons and klystrons. 25kV/3kA Pseudospark switch of current rise time of 1kA/|a-sec and pulse repetition rate of 500Hz is being developed. Plasma assisted high power microwave device is also being investigated.

  13. Development of High Power Vacuum Tubes for Accelerators and Plasma Heating

    Srivastava, Vishnu

    2012-01-01

    High pulsed power magnetrons and klystrons for medical and industrial accelerators, and high CW power klystrons and gyrotrons for plasma heating in tokamak, are being developed at CEERI. S-band 2.0MW pulsed tunable magnetrons of centre frequency 2856MHz and 2998 MHz were developed, and S-band 2.6MW pulsed tunable magnetron is being developed for medical LINAC, and 3MW pulsed tunable magnetron is being developed for industrial accelerator. S-band (2856MHz), 5MW pulsed klystron was developed for particle accelerator, and S-band 6MW pulsed klystron is under development for 10MeV industrial accelerator. 350MHz, 100kW (CW) klystron is being developed for proton accelerator, and C-band 250kW (CW) klystron is being developed for plasma heating. 42GHz, 200kW (CW/Long pulse) gyrotron is under development for plasma heating. Plasma filled tubes are also being developed for switching. 25kV/1kA and 40kV/3kA thyratrons were developed for high voltage high current switching in pulse modulators for magnetrons and klystrons. 25kV/3kA Pseudospark switch of current rise time of 1kA/|a-sec and pulse repetition rate of 500Hz is being developed. Plasma assisted high power microwave device is also being investigated.

  14. Solid state pump lasers with high power and high repetition rate

    Oba, Masaki; Kato, Masaaki; Arisawa, Takashi

    1995-01-01

    We built a laser diode pumped solid state green laser (LDPSSGL) rated at high repetition rate. Two laser heads are placed in one cavity with a rotator in between to design to avoid thermal lensing and thermal birefringence effect. Although average green laser power higher than 10 W was obtained at 1 kHz repetition rate with pulse width of 20-30 nsec, the beam quality was so much deteriorated that energy efficiency was as low as 2 %. Learning from this experience that high power oscillator causes a lot of thermal distortion not only in the laser rod but also in the Q-switch device, we proceeded to built a oscillator/amplifier system. A low power oscillator has a slab type crystal in the cavity. As a result spatial distribution of laser power was extremely improved. As we expect that the high repetition rate solid state laser should be CW operated Q-switch type laser from the view point of lifetime of diode lasers, a conventional arc lamp pumped CW Q-switch green YAG laser of which the repetition rate is changeable from 1 kHz to 5 kHz and the pulse width is 250-570 nsec was also tested to obtain pumping characteristics of a dye laser as a function of power, pulse width etc., and dye laser pulse width of 100-130 nsec were obtained. (author)

  15. Numerical simulations of novel high-power high-brightness diode laser structures

    Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

    2001-07-01

    One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

  16. Tutorial: Integrated-photonic switching structures

    Soref, Richard

    2018-02-01

    Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

  17. Solid spectroscopy: semiconductors

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  18. Large-area high-power VCSEL pump arrays optimized for high-energy lasers

    Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

    2012-06-01

    Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

  19. Intrinsic nanofilamentation in resistive switching

    Wu, Xing

    2013-03-15

    Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

  20. Strong Exciton-photon Coupling in Semiconductor Microcavities

    Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher

    1999-01-01

    The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....

  1. Proton-Controlled Organic Microlaser Switch.

    Gao, Zhenhua; Zhang, Wei; Yan, Yongli; Yi, Jun; Dong, Haiyun; Wang, Kang; Yao, Jiannian; Zhao, Yong Sheng

    2018-05-25

    Microscale laser switches have been playing irreplaceable roles in the development of photonic devices with high integration levels. However, it remains a challenge to switch the lasing wavelengths across a wide range due to relatively fixed energy bands in traditional semiconductors. Here, we report a strategy to switch the lasing wavelengths among multiple states based on a proton-controlled intramolecular charge-transfer (ICT) process in organic dye-doped flexible microsphere resonant cavities. The protonic acids can effectively bind onto the ICT molecules, which thus enhance the ICT strength of the dyes and lead to a red-shifted gain behavior. On this basis, the gain region was effectively modulated by using acids with different proton-donating ability, and as a result, laser switching among multiple wavelengths was achieved. The results will provide guidance for the rational design of miniaturized lasers with performances based on the characteristic of organic optoelectronic materials.

  2. Feasibility Study for High Power RF – Energy Recovery in Particle Accelerators

    Betz, Michael

    2010-01-01

    When dealing with particle accelerators, especially in systems with travelling wave structures and low beam loading, a substantial amount of RF power is dissipated in 50Ω termination loads. For the Super Proton Synchrotron (SPS) at Cern this is 69 % of the incident RF power or about 1 MW. Different ideas, making use of that otherwise dissipated power, are presented and their feasibility is reviewed. The most feasible one, utilizing an array of semiconductor based RF/DC modules, is used to create a design concept for energy recovery in the SPS. The modules are required to operate at high power, high efficiency and with low harmonic radiation. Besides the actual RF rectifier, they contain additional components to ensure a graceful degradation of the overall system. Different rectifier architectures and semiconductor devices are compared and the most suitable ones are chosen. Two prototype devices were built and operated with up to 400 W of pulsed RF power. Broadband measurements – capturing all harmonics up ...

  3. Monolithic, High-Speed Fiber-Optic Switching Array for Lidar, Phase II

    National Aeronautics and Space Administration — This NASA SBIR Phase II effort will develop a 1 x 10 prototype non-mechanical fiber optic switch for use with high power lasers. The proposed optical device is a...

  4. Experimental approach to high power long duration neutral beams

    Horiike, Hiroshi

    1981-12-01

    Experimental studies of ion sources and beam dumps for the development of a high power long duration neutral beam injector for JT-60 are presented. Long pulse operation of high power beams requires a high degree of reliability. To develop a reliable ion source with large extraction area, a new duoPIGatron ion source with a coaxially shaped intermediate electrode is proposed and tested. Magnetic configuration is examined numerically to obtain high current arc discharge and source plasma with small density variation. Experimental results show that primary electrons were fed widely from the cathode plasma region to the source plasma region and that dense uniform source plasma could be obtained easily. Source plasma characteristics are studied and comparison of these with other sources are also described. To develop extraction electrode of high power ion source, experimental studies were made on the cooling of the electrode. Long Pulse beams were extracted safely under the condition of high heat loading on the electrode. Finally, burnout study for the development of high power beam dumps is presented. Burnout data were obtained from subcooled forced-convective boiling of water in a copper finned tube irradiated by high power ion beams. The results yield simple burnout correlations which can be used for the prediction of burnout heat flux of the beam dump. (author)

  5. High-powered CO2 -lasers and noise control

    Honkasalo, Antero; Kuronen, Juhani

    High-power CO2 -lasers are being more and more widely used for welding, drilling and cutting in machine shops. In the near future, different kinds of surface treatments will also become routine practice with laser units. The industries benefitting most from high power lasers will be: the automotive industry, shipbuilding, the offshore industry, the aerospace industry, the nuclear and the chemical processing industries. Metal processing lasers are interesting from the point of view of noise control because the working tool is a laser beam. It is reasonable to suppose that the use of such laser beams will lead to lower noise levels than those connected with traditional metal processing methods and equipment. In the following presentation, the noise levels and possible noise-control problems attached to the use of high-powered CO2 -lasers are studied.

  6. High power pulsed sources based on fiber amplifiers

    Canat, Guillaume; Jaouën, Yves; Mollier, Jean-Claude; Bouzinac, Jean-Pierre; Cariou, Jean-Pierre

    2017-11-01

    Cladding-pumped rare-earth-doped fiber laser technologies are currently among the best sources for high power applications. Theses extremely compact and robust sources appoint them as good candidate for aeronautical and space applications. The double-clad (DC) fiber converts the poor beamquality of high-power large-area pump diodes from the 1st cladding to laser light at another wavelength guided in an active single-mode core. High-power coherent MOPA (Master Oscillator Power Amplifier) sources (several 10W CW or several 100W in pulsed regime) will soon be achieved. Unfortunately it also brings nonlinear effects which quickly impairs output signal distortions. Stimulated Brillouin scattering (SBS) and optical parametric amplification (OPA) have been shown to be strong limitations. Based on amplifier modeling and experiments we discuss the performances of these sources.

  7. Research results for the applications of high power ion beams

    Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Zhang Jiasheng; Xu Ri; Peng Jianchang; Ren Shuqing; Li Peng; Yang Li; Huang Jianjun; Zhang Guoguang; Ouyang Xiaoping; Li Hongyu

    2003-01-01

    The results obtained in the theoretical and experimental studies for the application of high power ion beams in certain areas of nuclear physics and material science are reported. The preliminary experimental results of generating 6-7 MeV quasi-monoenergetic pulsed γ-rays with high power pulsed proton beams striking 19 F target on the Flash II accelerator are presented. By placing the target far enough downstream, the quasi-monoenergetic pulsed γ-rays can be discriminated experimentally from the diode Bremsstrahlung. This article also describes the other applications of high power ion beams and the preliminary experimental and theoretical results in simulation of soft X-ray thermal-mechanical effects, generation of high intense pulsed neutrons, equation of state and shock-wave physics experiments, surface modification and so on

  8. Stretchers and compressors for ultra-high power laser systems

    Yakovlev, I V [Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)

    2014-05-30

    This review is concerned with pulse stretchers and compressors as key components of ultra-high power laser facilities that take advantage of chirped-pulse amplification. The potentialities, characteristics, configurations and methods for the matching and alignment of these devices are examined, with particular attention to the history of the optics of ultra-short, ultra-intense pulses before and after 1985, when the chirped-pulse amplification method was proposed, which drastically changed the view of the feasibility of creating ultra-high power laser sources. The review is intended primarily for young scientists and experts who begin to address the amplification and compression of chirped pulses, experts in laser optics and all who are interested in scientific achievements in the field of ultra-high power laser systems. (review)

  9. Tunable Broadband Acoustic Gain in Piezoelectric Semiconductors at ε-Near-Zero Response

    Christensen, Johan; Willatzen, Morten

    2015-01-01

    Piezoelectric semiconductors have emerged as materials capable to amplify sound waves when electrons are set to drift at supersonic speeds. Several experiments have demonstrated this behaviour at moderate amplification levels for some intrinsic semiconductors and carrier concentrations......-compensation in metamaterials and applicable for sensing such as nonlinear devices. The paper contains a detailed derivation and discussion of transmission and reflection coefficients for pressure pulses impinging on a semiconductor slab and the acoustic gain enhancement that can be achieved by dynamic switching...

  10. Experiments on high-power ion beam generation in self-insulated diodes

    Bystritskii, V.M.; Glyshko, Yu.A.; Sinerbrjukhov, A.A.; Kharlov, A.V.

    1991-01-01

    Experimental results are given on high-power ion beams (HPIB) generation in a vacuum spherical focusing diode with self-magnetic insulation, obtained from the nanosecond accelerator PARUS with 0.2-TW power and 60-ns pulse duration for a matched load. When the passive plasma source of the ions was used, the efficiency of the HPIB generation was measured to be as high as 20% for 700-kV diode voltage and 10-kA/cm 2 beam density in the focal plane. The application of a coaxial plasma opening switch (POS) prior to the diode resulted in a factor-of-1.8 increase in the diode power in comparison with a match operation in the absence of a POS. (author)

  11. High Power 1443.5 nm Laser with Nd:YAG Single Crystal Fiber

    Han Rao

    2017-07-01

    Full Text Available A high-power eye-safe 1443.5 nm laser was demonstrated with an Nd:YAG single crystal fiber (SCF as the gain medium. For continuous wave (CW operation, a maximum output power of 13.3 W was obtained under an absorbed pump power of 95.0 W, corresponding to an optical-to-optical conversion efficiency of 14.0%. For acousto-optically (AO Q-switched regime, an output power of 1.95 W was obtained at a pulse repetition frequency (PRF of 10 kHz. The pulse duration was 69.5 ns. The pulse energy and peak power were calculated to be 195 µJ and 2.81 kW, respectively.

  12. Optical design of high power excimer laser system

    Zhang Yongsheng; Zhao Jun; Ma Lianying; Yi Aiping; Liu Jingru

    2011-01-01

    Image relay and angular multiplexing,which should be considered together in the design of high power excimer laser system, is reviewed. It's important to select proper illumination setup and laser beam shaping techniques. Given the complex and special angular multiplexing scheme in high power excimer laser systems, some detailed conceptual layout schemes are given in the paper. After a brief description of lens array and reflective telescope objective, which combine the incoming beams to a common focus, a new schematic layout which uses the final targeting optics and one optical delay line array, to realize multiplexing and de-multiplexing simultaneously is first proposed in the paper. (authors)

  13. Modeling high-power RF accelerator cavities with SPICE

    Humphries, S. Jr.

    1992-01-01

    The dynamical interactions between RF accelerator cavities and high-power beams can be treated on personal computers using a lumped circuit element model and the SPICE circuit analysis code. Applications include studies of wake potentials, two-beam accelerators, microwave sources, and transverse mode damping. This report describes the construction of analogs for TM mn0 modes and the creation of SPICE input for cylindrical cavities. The models were used to study continuous generation of kA electron beam pulses from a vacuum cavity driven by a high-power RF source

  14. Science opportunities at high power accelerators like APT

    Browne, J.C.

    1996-01-01

    This paper presents applications of high power RF proton linear accelerators to several fields. Radioisotope production is an area in which linacs have already provided new isotopes for use in medical and industrial applications. A new type of spallation neutron source, called a long-pulse spallation source (LPSS), is discussed for application to neutron scattering and to the production and use of ultra-cold neutrons (UCN). The concept of an accelerator-driven, transmutation of nuclear waste system, based on high power RF linac technology, is presented along with its impact on spent nuclear fuels

  15. High-power CO laser and its potential applications

    Sato, Shunichi; Takahashi, Kunimitsu; Shimamoto, Kojiro; Takashima, Yoichi; Matsuda, Keiichi; Kuribayashi, Shizuma; Noda, Osamu; Imatake, Shigenori; Kondo, Motoe.

    1995-01-01

    The R and D program for the development of a high-power CO laser and its application technologies is described. Based on a self-sustained discharge excitation scheme, the available laser output has been successfully scaled to over 20 kW. The CO laser cutting experiments for thick metals have been performed in association with the decommissioning technologies development. Other potential applications, which include those based on photo chemical process, are reviewed. Recently demonstrated high-power tunable operation and room-temperature operation are also reported. (author)

  16. Laboratory of plasma studies. Papers on high power particle beams

    Anon.

    1990-01-01

    This book contains paper on Exploding metal film active anode sources experiments on the Lion extractor Ion Diode; Long conductor time plasma opening switch experiments; and Focusing studies of an applied B r extraction diode on the Lion accelerator

  17. Proceedings of wide band gap semiconductors

    Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

    1992-01-01

    This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

  18. Biopolymer-nanocarbon composite electrodes for use as high-energy high-power density electrodes

    Karakaya, Mehmet; Roberts, Mark; Arcilla-Velez, Margarita; Zhu, Jingyi; Podila, Ramakrishna; Rao, Apparao

    2014-03-01

    Supercapacitors (SCs) address our current energy storage and delivery needs by combining the high power, rapid switching, and exceptional cycle life of a capacitor with the high energy density of a battery. Although activated carbon is extensively used as a supercapacitor electrode due to its inexpensive nature, its low specific capacitance (100-120 F/g) fundamentally limits the energy density of SCs. We demonstrate that a nano-carbon based mechanically robust, electrically conducting, free-standing buckypaper electrode modified with an inexpensive biorenewable polymer, viz., lignin increases the electrode's specific capacitance (~ 600-700 F/g) while maintaining rapid discharge rates. In these systems, the carbon nanomaterials provide the high surface area, electrical conductivity and porosity, while the redox polymers provide a mechanism for charge storage through Faradaic charge transfer. The design of redox polymers and their incorporation into nanomaterial electrodes will be discussed with a focus on enabling high power and high energy density electrodes. Research supported by US NSF CMMI Grant 1246800.

  19. Regime dependence of photo-darkening-induced modal degradation in high power fiber amplifier (Conference Presentation)

    Boullet, Johan; Vincont, Cyril; Jolly, Alain; Pierre, Christophe

    2017-03-01

    Thermally induced transverse modal instabilities (TMI) have attracted these five years an intense research efforts of the entire fiber laser development community, as it represents the current most limiting effect of further power scaling of high power fiber laser. Anyway, since 2014, a few publications point out a new limiting thermal effect: fiber modal degradation (FMD). It is characterized by a power rollover and simultaneous increase of the cladding light at an average power far from the TMI threshold together with a degraded beam which does not exhibit temporal fluctuations, which is one of the main characteristic of TMI. We report here on the first systemic experimental study of FMD in a high power photonic crystal fiber. We put a particular emphasis on the dependence of its average power threshold on the regime of operation. We experimentally demonstrate that this dependence is intrinsically linked to regime-dependent PD-saturated losses, which are nearly three times higher in CW regime than in short pulse picosecond regime. We make the hypothesis that the existence of these different PD equilibrium states between CW regime and picosecond QCW pulsed regime is due to a partial photo-bleaching of color centers in picosecond regime thanks to a higher probability of multi-photon process induced photobleaching (PB) at high peak power. This hypothesis is corroborated by the demonstration of the reversibility of the FMD induced in CW regime by simply switching the seed CW 1064 nm light by a short pulse, picosecond oscillator.

  20. Compound Semiconductor Radiation Detector

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  1. Photoconductive switch enhancements for use in Blumlein pulse generators

    Davanloo, F.; Park, H.; Collins, C. B.; Agee, F. J.

    1999-01-01

    Stacked Blumlein pulse generators developed at the University of Texas at Dallas have produced high-power waveforms with risetimes and repetition rates in the range of 0.2-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap or photoconductive switch. Adaptation of the design has enabled the stacked Blumleins to produce 80 MW, nanosecond pulses with risetimes better than 200 ps into nominally matched loads. The device has a compact line geometry and is commutated by a single GaAs photoconductive switch triggered by a low power laser diode array. Our current investigations involve the switch characteristics that affect the broadening of the current channels in the avalanche, pre-avalanche seedings, the switch lifetime and the durability. This report presents the progress toward improving the GaAs switch operation and lifetime in stacked Blumlein pulsers. Advanced switch treatments including diamond film overcoating are implemented and discussed

  2. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  3. A soft switching with reduced voltage stress ZVT-PWM full-bridge converter

    Sahin, Yakup; Ting, Naim Suleyman; Acar, Fatih

    2018-04-01

    This paper introduces a novel active snubber cell for soft switching pulse width modulation DC-DC converters. In the proposed converter, the main switch is turned on under zero voltage transition and turned off under zero voltage switching (ZVS). The auxiliary switch is turned on under zero current switching (ZCS) and turned off under zero current transition. The main diode is turned on under ZVS and turned off under ZCS. All of the other semiconductors in the converter are turned on and off with soft switching. There is no extra voltage stress on the semiconductor devices. Besides, the proposed converter has simple structure and ease of control due to common ground. The detailed theoretical analysis of the proposed converter is presented and also verified with both simulation and experimental study at 100 kHz switching frequency and 600 W output power. Furthermore, the efficiency of the proposed converter is 95.7% at nominal power.

  4. Measurement of high-power microwave pulse under intense ...

    Abstract. KALI-1000 pulse power system has been used to generate single pulse nanosecond duration high-power microwaves (HPM) from a virtual cathode oscillator. (VIRCATOR) device. HPM power measurements were carried out using a transmitting– receiving system in the presence of intense high frequency (a few ...

  5. High Powered Rocketry: Design, Construction, and Launching Experience and Analysis

    Paulson, Pryce; Curtis, Jarret; Bartel, Evan; Cyr, Waycen Owens; Lamsal, Chiranjivi

    2018-01-01

    In this study, the nuts and bolts of designing and building a high powered rocket have been presented. A computer simulation program called RockSim was used to design the rocket. Simulation results are consistent with time variations of altitude, velocity, and acceleration obtained in the actual flight. The actual drag coefficient was determined…

  6. High Power laser power conditioning system new discharge circuit research

    Li Yi; Peng Han Sheng; Zhou Pei Zhang; Zheng Wan Guo; Guo Lang Fu; Chen Li Hua; Chen De Hui; Lai Gui You; Luan Yong Ping

    2002-01-01

    The new discharge circuit of power conditioning system for high power laser is studied. The theoretical model of the main discharge circuit is established. The pre-ionization circuit is studied in experiment. In addition, the explosion energy of the new large xenon lamp is successfully measured. The conclusion has been applied to 4 x 2 amplifier system

  7. A high-power laser system for thermonuclear fusion experiments

    Azizov, Eh.A.; Ignat'ev, L.P.; Koval'skij, N.G.; Kolesnikov, Yu.A.; Mamzer, A.F.; Pergament, M.I.; Rudnitskij, Yu.P.; Smirnov, G.V.; Yagnov, V.A.; Nikolaevskij, V.G.

    1976-01-01

    A high-power laser system has been designed for an energy output of approximately 3X10 4 J. Neodymium glass was selected based on the level of technical progress, operating experience and the availability of components. The operating performance that has been achieved to date is described. (author)

  8. High Efficiency Power Converter for Low Voltage High Power Applications

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...

  9. Fundamentals and industrial applications of high power laser beam cladding

    Bruck, G.J.

    1988-01-01

    Laser beam cladding has been refined such that clad characteristics are precisely determined through routine process control. This paper reviews the state of the art of laser cladding optical equipment, as well as the fundamental process/clad relationships that have been developed for high power processing. Major categories of industrial laser cladding are described with examples chose to highlight particular process attributes

  10. Modelling aluminium wire bond reliability in high power OMP devices

    Kregting, R.; Yuan, C.A.; Xiao, A.; Bruijn, F. de

    2011-01-01

    In a RF power application such as the OMP, the wires are subjected to high current (because of the high power) and high temperature (because of the heat from IC and joule-heating from the wire itself). Moreover, the wire shape is essential to the RF performance. Hence, the aluminium wire is

  11. High to ultra-high power electrical energy storage.

    Sherrill, Stefanie A; Banerjee, Parag; Rubloff, Gary W; Lee, Sang Bok

    2011-12-14

    High power electrical energy storage systems are becoming critical devices for advanced energy storage technology. This is true in part due to their high rate capabilities and moderate energy densities which allow them to capture power efficiently from evanescent, renewable energy sources. High power systems include both electrochemical capacitors and electrostatic capacitors. These devices have fast charging and discharging rates, supplying energy within seconds or less. Recent research has focused on increasing power and energy density of the devices using advanced materials and novel architectural design. An increase in understanding of structure-property relationships in nanomaterials and interfaces and the ability to control nanostructures precisely has led to an immense improvement in the performance characteristics of these devices. In this review, we discuss the recent advances for both electrochemical and electrostatic capacitors as high power electrical energy storage systems, and propose directions and challenges for the future. We asses the opportunities in nanostructure-based high power electrical energy storage devices and include electrochemical and electrostatic capacitors for their potential to open the door to a new regime of power energy.

  12. Functionally graded materials produced with high power lasers

    De Hosson, J. T. M.; Ocelik, V.; Chandra, T; Torralba, JM; Sakai, T

    2003-01-01

    In this keynote paper two examples will be present of functionally graded materials produced with high power Nd:YAG lasers. In particular the conditions for a successful Laser Melt Injection (LMI) of SiC and WC particles into the melt pool of A18Si and Ti6Al4V alloys are presented. The formation of

  13. Los Alamos high-power proton linac designs

    Lawrence, G.P. [Los Alamos National Laboratory, NM (United States)

    1995-10-01

    Medium-energy high-power proton linear accelerators have been studied at Los Alamos as drivers for spallation neutron applications requiring large amounts of beam power. Reference designs for such accelerators are discussed, important design factors are reviewed, and issues and concern specific to this unprecedented power regime are discussed.

  14. Wavelength switchable high-power diode-side-pumped rod Tm:YAG Laser around 2µm.

    Wang, Caili; Du, Shifeng; Niu, Yanxiong; Wang, Zhichao; Zhang, Chao; Bian, Qi; Guo, Chuan; Xu, Jialin; Bo, Yong; Peng, Qinjun; Cui, Dafu; Zhang, Jingyuan; Lei, Wenqiang; Xu, Zuyan

    2013-03-25

    We report a high-power diode-side-pumped rod Tm:YAG laser operated at either 2.07 or 2.02 µm depending on the transmission of pumped output coupler. The laser yields 115W of continuous-wave output power at 2.07 µm with 5% output coupling, which is the highest output power for all solid-state 2.07 μm cw rod Tm:YAG laser reported so far. With an output coupler of 10% transmission, the center wavelength of the laser is switched to 2.02 μm with an output power of 77.1 W. This is the first observation of high-power wavelength switchable diode-side-pumped rod Tm:YAG laser around 2 µm.

  15. Semiconductor Physical Electronics

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  16. Coating possibilities for magnetic switches

    Sharp, D.J.; Harjes, H.C.; Mann, G.A.; Morgan, F.A.

    1990-01-01

    High average power magnetic pulse compression systems are now being considered for use in several applications such as the High Power Radiation Source (HiPoRS) project. Such systems will require high reliability magnetic switches (saturable inductors) that are very efficient and have long lifetimes. One of the weakest components in magnetic switches is their interlaminar insulation. Considerations related to dielectric breakdown, thermal management of compact designs, and economical approaches for achieving these needs must be addressed. Various dielectric insulation and coating materials have been applied to Metglas foil in an attempt to solve the complex technical and practical problems associated with large magnetic switch structures. This work reports various needs, studies, results, and proposals in selecting and evaluating continuous coating approaches for magnetic foil. Techniques such as electrophoretic polymer deposition and surface chemical oxidation are discussed. We also propose continuous photofabrication processes for applying dielectric ribs or spacers to the foil which permit circulation of dielectric liquids for cooling during repetitive operation. 10 refs., 8 figs., 11 tabs

  17. NASA Glenn Research Center Program in High Power Density Motors for Aeropropulsion

    Brown, Gerald V.; Kascak, Albert F.; Ebihara, Ben; Johnson, Dexter; Choi, Benjamin; Siebert, Mark; Buccieri, Carl

    2005-01-01

    Electric drive of transport-sized aircraft propulsors, with electric power generated by fuel cells or turbo-generators, will require electric motors with much higher power density than conventional room-temperature machines. Cryogenic cooling of the motor windings by the liquid hydrogen fuel offers a possible solution, enabling motors with higher power density than turbine engines. Some context on weights of various systems, which is required to assess the problem, is presented. This context includes a survey of turbine engine weights over a considerable size range, a correlation of gear box weights and some examples of conventional and advanced electric motor weights. The NASA Glenn Research Center program for high power density motors is outlined and some technical results to date are presented. These results include current densities of 5,000 A per square centimeter current density achieved in cryogenic coils, finite element predictions compared to measurements of torque production in a switched reluctance motor, and initial tests of a cryogenic switched reluctance motor.

  18. A Cryogenic High-Power-Density Bearingless Motor for Future Electric Propulsion

    Choi, Benjamin; Siebert, Mark

    2008-01-01

    The NASA Glenn Research Center (GRC) is developing a high-power-density switched-reluctance cryogenic motor for all-electric and pollution-free flight. However, cryogenic operation at higher rotational speeds markedly shortens the life of mechanical rolling element bearings. Thus, to demonstrate the practical feasibility of using this motor for future flights, a non-contact rotor-bearing system is a crucial technology to circumvent poor bearing life that ordinarily accompanies cryogenic operation. In this paper, a bearingless motor control technology for a 12-8 (12 poles in the stator and 8 poles in the rotor) switched-reluctance motor operating in liquid nitrogen (boiling point, 77 K (-196 C or -321 F)) was presented. We pushed previous disciplinary limits of electromagnetic controller technique by extending the state-of-the-art bearingless motor operating at liquid nitrogen for high-specific-power applications. The motor was levitated even in its nonlinear region of magnetic saturation, which is believed to be a world first for the motor type. Also we used only motoring coils to generate motoring torque and levitation force, which is an important feature for developing a high specific power motor.

  19. Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

    Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

    2018-02-01

    The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications 96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

  20. Radiation effects in technologies of semiconductor materials and devises

    Korshunov, F.P.; Bogatyrev, Yu.V.; Lastovskij, S.B.; Marchenko, I.G.; Zhdanovich, N.E.

    2003-01-01

    In the paper were considered the physical basics and practical results of using of penetrating radiations in technologies of nuclear transmutation of semiconductor materials (Si, GaAs) as well as in production of semiconductor devices including high-power silicon diodes, thyristors and transistors. It is shown the high efficiency of radiation technology for increasing of electronic device speed, exclusion of technological operations such as gold or platinum diffusions, increase of quality, decrease of prime cost and increase of good-to-bad device ratio yield

  1. Contacts to semiconductors

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  2. Semiconductor Electrical Measurements Laboratory

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  3. Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.; hide

    2016-01-01

    Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

  4. Switched on!

    2008-01-01

    Like a star arriving on stage, impatiently followed by each member of CERN personnel and by millions of eyes around the world, the first beam of protons has circulated in the LHC. After years in the making and months of increasing anticipation, today the work of hundreds of people has borne fruit. WELL DONE to all! Successfully steered around the 27 kilometres of the world’s most powerful particle accelerator at 10:28 this morning, this first beam of protons circulating in the ring marks a key moment in the transition from over two decades of preparation to a new era of scientific discovery. "It’s a fantastic moment," said the LHC project leader Lyn Evans, "we can now look forward to a new era of understanding about the origins and evolution of the universe". Starting up a major new particle accelerator takes much more than flipping a switch. Thousands of individual elements have to work in harmony, timings have to be synchronize...

  5. Dynamic behavior of HTSC opening switch models controlled by short over-critical current pulses

    Agafonov, A.V.; Krastelev, E.G.; Voronin, V.S.

    1999-01-01

    We present results of experimental research of dynamical properties of thin films of YBa 2 Cu 3 O 7 HTSC-switch models under action of short overcritical current pulses to test this method of control of fast high-power opening switches for accelerator applications

  6. Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

    Lee, F. C.; Chen, D. Y.; Jovanovic, M.; Hopkins, D. C.

    1985-01-01

    The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

  7. A New Approach to High Efficincy in Isolated Boost Converters for High-Power Low-Voltage Fuel Cell Apllications

    Nymand, Morten; Andersen, Michael A. E.

    2008-01-01

    A new low-leakage-inductance low-resistance design approach to low-voltage high-power isolated boost converters is presented. Very low levels of parasitic circuit inductances are achieved by optimizing transformer design and circuit lay-out. Primary side voltage clamp circuits can be eliminated...... by the use of power MOSFETs fully rated for repetitive avalanche. Voltage rating of primary switches can now be reduced, significantly reducing switch on-state losses. Finally, silicon carbide rectifying diodes allow fast diode turn-off, further reducing losses. Test results from a 1.5 kW full-bridge boost...... converter verify theoretical analysis and demonstrate very high efficiency. Worst case efficiency, at minimum input voltage maximum power, is 96.8 percent and maximum efficiency reaches 98 percent....

  8. High-Power Ka-Band Window and Resonant Ring

    Jay L. Hirshfield

    2006-01-01

    A stand-alone 200 MW rf test station is needed for carrying out development of accelerator structures and components for a future high-gradient multi-TeV collider, such as CLIC. A high-power rf window is needed to isolate the test station from a structure element under test. This project aimed to develop such a window for use at a frequency in the range 30-35 GHz, and to also develop a high-power resonant ring for testing the window. During Phase I, successful conceptual designs were completed for the window and the resonant ring, and cold tests of each were carried out that confirmed the designs

  9. Designing high power targets with computational fluid dynamics (CFD)

    Covrig, S. D.

    2013-01-01

    High power liquid hydrogen (LH2) targets, up to 850 W, have been widely used at Jefferson Lab for the 6 GeV physics program. The typical luminosity loss of a 20 cm long LH2 target was 20% for a beam current of 100 μA rastered on a square of side 2 mm on the target. The 35 cm long, 2500 W LH2 target for the Qweak experiment had a luminosity loss of 0.8% at 180 μA beam rastered on a square of side 4 mm at the target. The Qweak target was the highest power liquid hydrogen target in the world and with the lowest noise figure. The Qweak target was the first one designed with CFD at Jefferson Lab. A CFD facility is being established at Jefferson Lab to design, build and test a new generation of low noise high power targets

  10. Designing high power targets with computational fluid dynamics (CFD)

    Covrig, S. D. [Thomas Jefferson National Laboratory, Newport News, VA 23606 (United States)

    2013-11-07

    High power liquid hydrogen (LH2) targets, up to 850 W, have been widely used at Jefferson Lab for the 6 GeV physics program. The typical luminosity loss of a 20 cm long LH2 target was 20% for a beam current of 100 μA rastered on a square of side 2 mm on the target. The 35 cm long, 2500 W LH2 target for the Qweak experiment had a luminosity loss of 0.8% at 180 μA beam rastered on a square of side 4 mm at the target. The Qweak target was the highest power liquid hydrogen target in the world and with the lowest noise figure. The Qweak target was the first one designed with CFD at Jefferson Lab. A CFD facility is being established at Jefferson Lab to design, build and test a new generation of low noise high power targets.

  11. Modeling, fabrication and high power optical characterization of plasmonic waveguides

    Lavrinenko, Andrei; Lysenko, Oleg

    2015-01-01

    This paper describes modeling, fabrication and high power optical characterization of thin gold films embedded in silicon dioxide. The propagation vector of surface plasmon polaritons has been calculated by the effective index method for the wavelength range of 750-1700 nm and film thickness of 15......, 30 and 45 nm. The fabrication process of such plasmonic waveguides with width in the range of 1-100 μm and their quality inspection are described. The results of optical characterization of plasmonic waveguides using a high power laser with the peak power wavelength 1064 nm show significant deviation...... from the linear propagation regime of surface plasmon polaritons at the average input power of 100 mW and above. Possible reasons for this deviation are heating of the waveguides and subsequent changes in the coupling and propagation losses....

  12. CAS Accelerator Physics (High-Power Hadron Machines) in Spain

    CAS

    2011-01-01

    The CERN Accelerator School (CAS) and ESS-Bilbao jointly organised a specialised course on High-Power Hadron Machines, held at the Hotel Barceló Nervión in Bilbao, Spain, from 24 May to 2 June, 2011.   CERN Accelerator School students. After recapitulation lectures on the essentials of accelerator physics and review lectures on the different types of accelerators, the programme focussed on the challenges of designing and operating high-power facilities. The particular problems for RF systems, beam instrumentation, vacuum, cryogenics, collimators and beam dumps were examined. Activation of equipment, radioprotection and remote handling issues were also addressed. The school was very successful, with 69 participants of 22 nationalities. Feedback from the participants was extremely positive, praising the expertise and enthusiasm of the lecturers, as well as the high standard and excellent quality of their lectures. In addition to the academic programme, the participants w...

  13. Hollow-core fibers for high power pulse delivery

    Michieletto, Mattia; Lyngsø, Jens K.; Jakobsen, Christian

    2016-01-01

    We investigate hollow-core fibers for fiber delivery of high power ultrashort laser pulses. We use numerical techniques to design an anti-resonant hollow-core fiber having one layer of non-touching tubes to determine which structures offer the best optical properties for the delivery of high power...... picosecond pulses. A novel fiber with 7 tubes and a core of 30 mu m was fabricated and it is here described and characterized, showing remarkable low loss, low bend loss, and good mode quality. Its optical properties are compared to both a 10 mu m and a 18 mu m core diameter photonic band gap hollow......-core fiber. The three fibers are characterized experimentally for the delivery of 22 picosecond pulses at 1032nm. We demonstrate flexible, diffraction limited beam delivery with output average powers in excess of 70W. (C) 2016 Optical Society of America...

  14. Embedded control system for high power RF amplifiers

    Sharma, Deepak Kumar; Gupta, Alok Kumar; Jain, Akhilesh; Hannurkar, P.R.

    2011-01-01

    RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

  15. High-Power ZBLAN Glass Fiber Lasers: Review and Prospect

    Xiushan Zhu

    2010-01-01

    Full Text Available ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF, considered as the most stable heavy metal fluoride glass and the excellent host for rare-earth ions, has been extensively used for efficient and compact ultraviolet, visible, and infrared fiber lasers due to its low intrinsic loss, wide transparency window, and small phonon energy. In this paper, the historical progress and the properties of fluoride glasses and the fabrication of ZBLAN fibers are briefly described. Advances of infrared, upconversion, and supercontinuum ZBLAN fiber lasers are addressed in detail. Finally, constraints on the power scaling of ZBLAN fiber lasers are analyzed and discussed. ZBLAN fiber lasers are showing promise of generating high-power emissions covering from ultraviolet to mid-infrared considering the recent advances in newly designed optical fibers, beam-shaped high-power pump diodes, beam combining techniques, and heat-dissipating technology.

  16. Transient Plasma Photonic Crystals for High-Power Lasers.

    Lehmann, G; Spatschek, K H

    2016-06-03

    A new type of transient photonic crystals for high-power lasers is presented. The crystal is produced by counterpropagating laser beams in plasma. Trapped electrons and electrically forced ions generate a strong density grating. The lifetime of the transient photonic crystal is determined by the ballistic motion of ions. The robustness of the photonic crystal allows one to manipulate high-intensity laser pulses. The scheme of the crystal is analyzed here by 1D Vlasov simulations. Reflection or transmission of high-power laser pulses are predicted by particle-in-cell simulations. It is shown that a transient plasma photonic crystal may act as a tunable mirror for intense laser pulses. Generalizations to 2D and 3D configurations are possible.

  17. High power electron accelerators for flue gas treatment

    Zimek, Z.

    2011-01-01

    Flue gas treatment process based on electron beam application for SO 2 and NO x removal was successfully demonstrated in number of laboratories, pilot plants and industrial demonstration facilities. The industrial scale application of an electron beam process for flue gas treatment requires accelerators modules with a beam power 100-500 kW and electron energy range 0.8-1.5 MeV. The most important accelerator parameters for successful flue gas radiation technology implementation are related to accelerator reliability/availability, electrical efficiency and accelerator price. Experience gained in high power accelerators exploitation in flue gas treatment industrial demonstration facility was described and high power accelerator constructions have been reviewed. (author)

  18. Pulsed discharges produced by high-power surface waves

    Böhle, A.; Ivanov, O.; Kolisko, A.; Kortshagen, U.; Schlüter, H.; Vikharev, A.

    1996-02-01

    The mechanisms of the ionization front advance in surface-wave-produced discharges are investigated using two experimental set-ups. The high-power surface waves are excited in a 3 cm wavelength band by a surfaguide and a novel type of launcher (an E-plane junction). The ionization front velocity of the surface wave is measured for a wide range of gas pressures, incident microwave power and initial pre-ionization. The experimental results are compared with theoretical ones based on three different models. The comparison between theory and experiment allows one to suggest a new interpretation of the ionization front's advance. The ionization front velocity is determined by a breakdown wave or an ionization wave in the electric field of a high-power surface wave in the zone near the ionization front.

  19. High power electron accelerators for flue gas treatment

    Zimek, Z. [Institute of Nuclear Chemistry and Technology, Warsaw (Poland)

    2011-07-01

    Flue gas treatment process based on electron beam application for SO{sub 2} and NO{sub x} removal was successfully demonstrated in number of laboratories, pilot plants and industrial demonstration facilities. The industrial scale application of an electron beam process for flue gas treatment requires accelerators modules with a beam power 100-500 kW and electron energy range 0.8-1.5 MeV. The most important accelerator parameters for successful flue gas radiation technology implementation are related to accelerator reliability/availability, electrical efficiency and accelerator price. Experience gained in high power accelerators exploitation in flue gas treatment industrial demonstration facility was described and high power accelerator constructions have been reviewed. (author)

  20. High-Power Electron Accelerators for Space (and other) Applications

    Nguyen, Dinh Cong [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Lewellen, John W. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-05-23

    This is a presentation on high-power electron accelerators for space and other applications. The main points covered are: electron beams for space applications, new designs of RF accelerators, high-power high-electron mobility transistors (HEMT) testing, and Li-ion battery design. In summary, the authors have considered a concept of 1-MeV electron accelerator that can operate up to several seconds. This concept can be extended to higher energy to produce higher beam power. Going to higher beam energy requires adding more cavities and solid-state HEMT RF power devices. The commercial HEMT have been tested for frequency response and RF output power (up to 420 W). Finally, the authors are testing these HEMT into a resonant load and planning for an electron beam test in FY17.

  1. High power rf component testing for the NLC

    Vlieks, A.E.; Fowkes, W.R.; Loewen, R.J.; Tantawi, S.G.

    1998-09-01

    In the Next Linear Collider (NLC), the high power rf components must be capable of handling peak rf power levels in excess of 600 MW. In the current view of the NLC, even the rectangular waveguide components must transmit at least 300 MW rf power. At this power level, peak rf fields can greatly exceed 100 MV/m. The authors present recent results of high power tests performed at the Accelerator Structure Test Area (ASTA) at SLAC. These tests are designed to investigate the rf breakdown limits of several new components potentially useful for the NLC. In particular, the authors tested a new TE 01 --TE 10 circular to rectangular wrap-around mode converter, a modified (internal fin) Magic Tee hybrid, and an upgraded flower petal mode converter

  2. Design and Characterization of High Power Targets for RIB Generation

    Zhang, Y.

    2001-01-01

    In this article, thermal modeling techniques are used to simulate ISOL targets irradiated with high power proton beams. Beam scattering effects, nuclear reactions and beam power deposition distributions in the target were computed with the Monte Carlo simulation code, GEANT4. The power density information was subsequently used as input to the finite element thermal analysis code, ANSYS, for extracting temperature distribution information for a variety of target materials. The principal objective of the studies was to evaluate techniques for more uniformly distributing beam deposited heat over the volumes of targets to levels compatible with their irradiation with the highest practical primary-beam power, and to use the preferred technique to design high power ISOL targets. The results suggest that radiation cooling, in combination, with primary beam manipulation, can be used to control temperatures in practically sized targets, to levels commensurate with irradiation with 1 GeV, 100 kW proton beams

  3. Active Photonic crystal fibers for high power applications

    Olausson, Christina Bjarnal Thulin

    The photonic crystal ber technology provides means to realize bers optimized for high power operation, due to the large single-mode cores and the unique design exibility of the microstructure. The work presented in this thesis focuses on improving the properties of active photonic crystal bers...... contributed to the compounding of new and improved material compositions. The second part is an investigation of pump absorption in photonic crystal bers, demonstrating that the microstructure in photonic crystal bers improves the pump absorption by up to a factor of two compared to step-index bers....... This plays an important role in high power lasers and ampliers with respect to efficiency, packaging, and thermal handling. The third part of the work has involved developing tools for characterizing the mode quality and stability of large core bers. Stable, single-mode bers with larger cores are essential...

  4. High-Power Microwave Transmission and Mode Conversion Program

    Vernon, Ronald J. [Univ. of Wisconsin, Madison, WI (United States)

    2015-08-14

    This is a final technical report for a long term project to develop improved designs and design tools for the microwave hardware and components associated with the DOE Plasma Fusion Program. We have developed basic theory, software, fabrication techniques, and low-power measurement techniques for the design of microwave hardware associated gyrotrons, microwave mode converters and high-power microwave transmission lines. Specifically, in this report we discuss our work on designing quasi-optical mode converters for single and multiple frequencies, a new method for the analysis of perturbed-wall waveguide mode converters, perturbed-wall launcher design for TE0n mode gyrotrons, quasi-optical traveling-wave resonator design for high-power testing of microwave components, and possible improvements to the HSX microwave transmission line.

  5. Multi Carrier Modulator for Switch-Mode Audio Power Amplifiers

    Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael Andreas E.

    2008-01-01

    While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment, in particular radio receivers. Lowering the EMI of swit...

  6. High power industrial picosecond laser from IR to UV

    Saby, Julien; Sangla, Damien; Pierrot, Simonette; Deslandes, Pierre; Salin, François

    2013-02-01

    Many industrial applications such as glass cutting, ceramic micro-machining or photovoltaic processes require high average and high peak power Picosecond pulses. The main limitation for the expansion of the picosecond market is the cost of high power picosecond laser sources, which is due to the complexity of the architecture used for picosecond pulse amplification, and the difficulty to keep an excellent beam quality at high average power. Amplification with fibers is a good technology to achieve high power in picosecond regime but, because of its tight confinement over long distances, light undergoes dramatic non linearities while propagating in fibers. One way to avoid strong non linearities is to increase fiber's mode area. Nineteen missing holes fibers offering core diameter larger than 80μm have been used over the past few years [1-3] but it has been shown that mode instabilities occur at approximately 100W average output power in these fibers [4]. Recently a new fiber design has been introduced, in which HOMs are delocalized from the core to the clad, preventing from HOMs amplification [5]. In these so-called Large Pitch Fibers, threshold for mode instabilities is increased to 294W offering robust single-mode operation below this power level [6]. We have demonstrated a high power-high efficiency industrial picosecond source using single-mode Large Pitch rod-type fibers doped with Ytterbium. Large Pitch Rod type fibers can offer a unique combination of single-mode output with a very large mode area from 40 μm up to 100μm and very high gain. This enables to directly amplify a low power-low energy Mode Locked Fiber laser with a simple amplification architecture, achieving very high power together with singlemode output independent of power level or repetition rate.

  7. A plasma microlens for ultrashort high power lasers

    Katzir, Yiftach; Eisenmann, Shmuel; Ferber, Yair; Zigler, Arie; Hubbard, Richard F.

    2009-07-01

    We present a technique for generation of miniature plasma lens system that can be used for focusing and collimating a high intensity femtosecond laser pulse. The plasma lens was created by a nanosecond laser, which ablated a capillary entrance. The spatial configuration of the ablated plasma focused a high intensity femtosecond laser pulse. This configuration offers versatility in the plasma lens small f-number for extremely tight focusing of high power lasers with no damage threshold restrictions of regular optical components.

  8. A plasma microlens for ultrashort high power lasers

    Katzir, Yiftach; Eisenmann, Shmuel; Ferber, Yair; Zigler, Arie; Hubbard, Richard F.

    2009-01-01

    We present a technique for generation of miniature plasma lens system that can be used for focusing and collimating a high intensity femtosecond laser pulse. The plasma lens was created by a nanosecond laser, which ablated a capillary entrance. The spatial configuration of the ablated plasma focused a high intensity femtosecond laser pulse. This configuration offers versatility in the plasma lens small f-number for extremely tight focusing of high power lasers with no damage threshold restrictions of regular optical components.

  9. A condenser for very high power steam turbines

    Gardey, Robert.

    1973-01-01

    The invention relates to a condenser for very high power steam turbines under the masonry-block supporting the low-pressure stages of the turbine, that condenser comprises two horizontal aligned water-tube bundles passing through the steam-exhaust sleeves of the low-pressure stages, on both sides of a common inlet water box. The invention can be applied in particular to the 1000-2000 MW turbines of light water nuclear power stations [fr

  10. Recent results in mirror based high power laser cutting

    Olsen, Flemming Ove; Nielsen, Jakob Skov; Elvang, Mads

    2004-01-01

    In this paper, recent results in high power laser cutting, obtained in reseach and development projects are presented. Two types of mirror based focussing systems for laser cutting have been developed and applied in laser cutting studies on CO2-lasers up to 12 kW. In shipyard environment cutting...... speed increase relative to state-of-the-art cutting of over 100 % has been achieved....

  11. Development of a high-power 432 MHz DTL

    Naito, F.; Kato, T.; Takasaki, E.; Yamazaki, Y.; Kawasumi, T.; Suzuki, K.; Iino, Y.

    1992-01-01

    A high-power model of a 432 MHz Drift-Tube Linac is under construction. It will accelerate H - ions from 3 to 5.4 MeV, and is a prototype of the DTL for the Japanese Hadron Project. Several new techniques have been developed for constructing the DTL: fabricating and assembling methods of permanent quadrupole magnet and a drift tube, alignment of the drift tube, and a method of connecting the tanks. (Author) 6 refs., 5 figs

  12. A high-power compact regenerative amplifier FEL

    Nguyen, D.C.; Sheffield, R.L.; Fortgang, C.M.; Kinross-Wright, J.M.; Ebrahim, N.A.; Goldstein, J.C.

    1997-01-01

    The Regenerative Amplifier FEL (RAFEL) is a new FEL approach aimed at achieving the highest optical power from a compact rf-linac FEL. The key idea is to feed back a small fraction ( 5 in single pass) wiggler to enable the FEL to reach saturation in a few passes. This paper summarizes the design of a high-power compact regenerative amplifier FEL and describes the first experimental demonstration of the RAFEL concept

  13. Preliminary research results for the generation and diagnostics of high power ion beams on FLASH II accelerator

    Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Li Jingya; Ren Shuqing; Ouyang Xiaoping; Zhang Guoguang; Li Hongyu

    2004-01-01

    The preliminary experimental results of the generation and diagnostics of high-power ion beams on FLASH II accelerator are reported. The high-power ion beams presently are being produced in a pinched diode. The method for enhancing the ratio of ion to electron current is to increase the electron residing time by pinching the electron flow. Furthermore, electron beam pinching can be combined with electron reflexing to achieve ion beams with even higher efficiency and intensity. The anode plasma is generated by anode foil bombarded with electron and anode foil surface flashover. In recent experiments on FLASH II accelerator, ion beams have been produced with a current of 160 kA and an energy of 500 keV corresponding to an ion beam peak power of about 80 GW. The ion number and current of high power ion beams were determined by monitoring delayed radioactivity from nuclear reactions induced in a 12 C target by the proton beams. The prompt γ-rays and diode Bremsstrahlung X-rays were measured with a PIN semi-conductor detector and a plastic scintillator detector. The current density distribution of ion beam was measured with a biased ion collector array. The ion beams were also recorded with a CR-39 detector. (authors)

  14. High Power Microwave Tubes: Basics and Trends, Volume 2

    Kesari, Vishal; Basu, B. N.

    2018-01-01

    Volume 2 of the book begins with chapter 6, in which we have taken up conventional MWTs (such as TWTs, klystrons, including multi-cavity and multi-beam klystrons, klystron variants including reflex klystron, IOT, EIK, EIO and twystron, and crossed-field tubes, namely, magnetron, CFA and carcinotron). In chapter 7, we have taken up fast-wave tubes (such as gyrotron, gyro-BWO, gyro-klystron, gyro-TWT, CARM, SWCA, hybrid gyro-tubes and peniotron). In chapter 8, we discuss vacuum microelectronic tubes (such as klystrino module, THz gyrotron and clinotron BWO); plasma-assisted tubes (such as PWT, plasma-filled TWT, BWO, including PASOTRON, and gyrotron); and HPM (high power microwave) tubes (such as relativistic TWT, relativistic BWO, RELTRON (variant of relativistic klystron), relativistic magnetron, high power Cerenkov tubes including SWO, RDG or orotron, MWCG and MWDG, bremsstrahlung radiation type tube, namely, vircator, and M-type tube MILO). In Chapter 9, we provide handy information about the frequency and power ranges of common MWTs, although more such information is provided at relevant places in the rest of the book as and where necessary. Chapter 10 is an epilogue that sums up the authors' attempt to bring out the various aspects of the basics of and trends in high power MWTs.

  15. Department of Defense high power laser program guidance

    Muller, Clifford H.

    1994-06-01

    The DoD investment of nominally $200 million per year is focused on four high power laser (HPL) concepts: Space-Based Laser (SBL), a Ballistic Missile Defense Organization effort that addresses boost-phase intercept for Theater Missile Defense and National Missile Defense; Airborne Laser (ABL), an Air Force effort that addresses boost-phase intercept for Theater Missile Defense; Ground-Based Laser (GBL), an Air Force effort addressing space control; and Anti-Ship Missile Defense (ASMD), a Navy effort addressing ship-based defense. Each organization is also supporting technology development with the goal of achieving less expensive, brighter, and lighter high power laser systems. These activities represent the building blocks of the DoD program to exploit the compelling characteristics of the high power laser. Even though DoD's HPL program are focused and moderately strong, additional emphasis in a few technical areas could help reduce risk in these programs. In addition, a number of options are available for continuing to use the High-Energy Laser System Test Facility (HELSTF) at White Sands Missile Range. This report provides a brief overview and guidance for the five efforts which comprise the DoD HPL program (SBL, ABL, GBL, ASMD, HELSTF).

  16. High Energy Density Sciences with High Power Lasers at SACLA

    Kodama, Ryosuke

    2013-10-01

    One of the interesting topics on high energy density sciences with high power lasers is creation of extremely high pressures in material. The pressures of more than 0.1 TPa are the energy density corresponding to the chemical bonding energy, resulting in expectation of dramatic changes in the chemical reactions. At pressures of more than TPa, most of material would be melted on the shock Hugoniot curve. However, if the temperature is less than 1eV or lower than a melting point at pressures of more than TPa, novel solid states of matter must be created through a pressured phase transition. One of the interesting materials must be carbon. At pressures of more than TPa, the diamond structure changes to BC and cubic at more than 3TPa. To create such novel states of matter, several kinds of isentropic-like compression techniques are being developed with high power lasers. To explore the ``Tera-Pascal Science,'' now we have a new tool which is an x-ray free electron laser as well as high power lasers. The XFEL will clear the details of the HED states and also efficiently create hot dense matter. We have started a new project on high energy density sciences using an XFEL (SACLA) in Japan, which is a HERMES (High Energy density Revolution of Matter in Extreme States) project.

  17. Semiconductors data handbook

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  18. Semiconductor radiation detection systems

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  19. Spin physics in semiconductors

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  20. Digital switched hydraulics

    Pan, Min; Plummer, Andrew

    2018-06-01

    This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

  1. Compound Semiconductor Radiation Detectors

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  2. Terahertz semiconductor nonlinear optics

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  3. Organic semiconductor crystals.

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  4. Repetitive plasma opening switch for powerful high-voltage pulse generators

    Dolgachev, G.I.; Zakatov, L.P.; Nitishinskii, M.S.; Ushakov, A.G.

    1998-01-01

    Results are presented of experimental studies of plasma opening switches that serve to sharpen the pulses of inductive microsecond high-voltage pulse generators. It is demonstrated that repetitive plasma opening switches can be used to create super-powerful generators operating in a quasi-continuous regime. An erosion switching mechanism and the problem of magnetic insulation in repetitive switches are considered. Achieving super-high peak power in plasma switches makes it possible to develop new types of high-power generators of electron beams and X radiation. Possible implementations and the efficiency of these generators are discussed

  5. Comparison of soft and hard-switching effiency in a three-level single phase 60kW dc-ac converter

    Munk-Nielsen, Stig; Teodorescu, Remus; Bech, Michael Møller

    2003-01-01

    Efficiency measurements on a three-level single-phase soft-switched converter are presented and show a slightly improved efficiency compared with the hard-switched converter for output powers higher than 25 % of rated power. The resonant converter switches are Zero Voltage Switched (ZVS......) and a simple resonant circuit is used. Increased resonant converter efficiency enables a reduction in the semiconductor size pr. watt output power or an increase the switching frequency....

  6. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

    Shuhan Jing

    2015-04-01

    Full Text Available The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

  7. Manufacture of Radio Frequency Micromachined Switches with Annealing

    Cheng-Yang Lin

    2014-01-01

    Full Text Available The fabrication and characterization of a radio frequency (RF micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

  8. Manufacture of radio frequency micromachined switches with annealing.

    Lin, Cheng-Yang; Dai, Ching-Liang

    2014-01-17

    The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

  9. Long distance high power optical laser fiber break detection and continuity monitoring systems and methods

    Rinzler, Charles C.; Gray, William C.; Faircloth, Brian O.; Zediker, Mark S.

    2016-02-23

    A monitoring and detection system for use on high power laser systems, long distance high power laser systems and tools for performing high power laser operations. In particular, the monitoring and detection systems provide break detection and continuity protection for performing high power laser operations on, and in, remote and difficult to access locations.

  10. Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

    Huang Da; Wu Jun-Jie; Tang Yu-Hua

    2013-01-01

    With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor has brought much attention to this study. Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are presented. We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms, which are applied to explain their resistive switchings

  11. Soft switching bidirectional DC-DC converter for ultracapacitor-batteries interface

    Adib, Ehsan; Farzanehfard, Hosein

    2009-01-01

    In this paper a new soft switching bidirectional DC-DC converter is introduced which can be applied as the interface circuit between ultracapacitors and batteries or fuel cells. All semiconductor devices in the proposed converter are soft switched while the control circuit remains PWM. Due to achieved soft switching condition, the energy conversion through the proposed converter is highly efficient. The proposed converter is analyzed and a prototype converter is implemented. The presented experimental results confirm the theoretical analysis.

  12. Soft switching bidirectional DC-DC converter for ultracapacitor-batteries interface

    Adib, Ehsan; Farzanehfard, Hosein [Dept. of Electrical and Computer Engineering, Isfahan Univ. of Technology (Iran)

    2009-12-15

    In this paper a new soft switching bidirectional DC-DC converter is introduced which can be applied as the interface circuit between ultracapacitors and batteries or fuel cells. All semiconductor devices in the proposed converter are soft switched while the control circuit remains PWM. Due to achieved soft switching condition, the energy conversion through the proposed converter is highly efficient. The proposed converter is analyzed and a prototype converter is implemented. The presented experimental results confirm the theoretical analysis. (author)

  13. Development of high-power dye laser chain

    Konagai, Chikara; Kimura, Hironobu; Fukasawa, Teruichiro; Seki, Eiji; Abe, Motohisa; Mori, Hideo

    2000-01-01

    Copper vapor laser (CVL) pumped dye laser (DL) system, both in a master oscillator power amplifier (MOPA) configuration, has been developed for Atomic Vapor Isotope Separation program in Japan. Dye laser output power of about 500 W has been proved in long-term operations over 200 hours. High power fiber optic delivery system is utilized in order to efficiently transport kilowatt level CVL beams to the DL MOPA. Single model CVL pumped DL oscillator has been developed and worked for 200 hours within +/- 0.1 pm wavelength stability. Phase modulator for spreading spectrum to the linewidth of hyperfine structure has been developed and demonstrated.

  14. Major projects for the use of high power linacs

    Prome, M.

    1996-01-01

    A review of the major projects for high power linacs is given. The field covers the projects aiming at the transmutation of nuclear waste or the production of tritium, as well as the production of neutrons for hybrid reactors or basic research with neutron sources. The technologies which arc common to all the projects are discussed. Comments are made on the technical difficulties encountered by all the projects, and the special problems of the pulsed linacs are mentioned. Elements for a comparison of normal conducting linacs versus superconducting ones are given. Finally the technical developments being made in various laboratories are reviewed. (author)

  15. Techniques for preventing damage to high power laser components

    Stowers, I.F.; Patton, H.G.; Jones, W.A.; Wentworth, D.E.

    1977-09-01

    Techniques for preventing damage to components of the LASL Shiva high power laser system were briefly presented. Optical element damage in the disk amplifier from the combined fluence of the primary laser beam and the Xenon flash lamps that pump the cavity was discussed. Assembly and cleaning techniques were described which have improved optical element life by minimizing particulate and optically absorbing film contamination on assembled amplifier structures. A Class-100 vertical flaw clean room used for assembly and inspection of laser components was also described. The life of a disk amplifier was extended from less than 50 shots to 500 shots through application of these assembly and cleaning techniques

  16. ELBE Center for High-Power Radiation Sources

    Peter Dr. Michel

    2016-01-01

    Full Text Available In the ELBE Center for High-Power Radiation Sources, the superconducting linear electron accelerator ELBE, serving  two free electron lasers, sources for intense coherent THz radiation, mono-energetic positrons, electrons, γ-rays, a neutron time-of-flight system as well as two synchronized ultra-short pulsed Petawatt laser systems are collocated. The characteristics of these beams make the ELBE center a unique research instrument for a variety of external users in fields ranging from material science over nuclear physics to cancer research, as well as scientists of the Helmholtz-Zentrum Dresden-Rossendorf (HZDR.

  17. High power impulse magnetron sputtering and its applications

    Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

    2018-04-01

    High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

  18. Ion energy characteristics downstream of a high power helicon

    Prager, James; Winglee, Robert; Ziemba, Tim; Roberson, B Race; Quetin, Gregory

    2008-01-01

    The High Power Helicon eXperiment operates at higher powers (37 kW) and lower background neutral pressure than other helicon experiments. The ion velocity distribution function (IVDF) has been measured at multiple locations downstream of the helicon source and a mach 3-6 flowing plasma was observed. The helicon antenna has a direct effect in accelerating the plasma downstream of the source. Also, the IVDF is affected by the cloud of neutrals from the initial gas puff, which keeps the plasma speed low at early times near the source.

  19. Ion energy characteristics downstream of a high power helicon

    Prager, James; Winglee, Robert; Ziemba, Tim; Roberson, B Race; Quetin, Gregory [University of Washington, Johnson Hall 070, Box 351310, 4000 15th Avenue NE, Seattle, WA 98195-1310 (United States)], E-mail: jprager@u.washington.edu

    2008-05-01

    The High Power Helicon eXperiment operates at higher powers (37 kW) and lower background neutral pressure than other helicon experiments. The ion velocity distribution function (IVDF) has been measured at multiple locations downstream of the helicon source and a mach 3-6 flowing plasma was observed. The helicon antenna has a direct effect in accelerating the plasma downstream of the source. Also, the IVDF is affected by the cloud of neutrals from the initial gas puff, which keeps the plasma speed low at early times near the source.

  20. The Linac4 DTL Prototype: Low and High Power Measurements

    De Michele, G; Marques-Balula, J; Ramberger, S

    2012-01-01

    The prototype of the Linac4 Drift Tube Linac (DTL) has undergone low power measurements in order to verify the RF coupling and to adjust the post-coupler lengths based on bead-pull and spectrum measurements. Following the installation at the test stand, the cavity has been subjected to high power operation at Linac4 and SPL duty cycles. Saturation effects and multipacting have been observed and linked to X-ray emission. Voltage holding is reported in the presence of magnetic fields from permanent magnet quadrupoles (PMQ) installed in the first drift tubes.

  1. Organic nonlinear crystals and high power frequency conversion

    Velsko, S.P.; Davis, L.; Wang, F.; Monaco, S.; Eimerl, D.

    1987-12-01

    We are searching for a new second- and third-harmonic generators among the salts of chiral organic acids and bases. We discuss the relevant properties of crystals from this group of compounds, including their nonlinear and phasematching characteristics, linear absorption, damage threshold and crystal growth. In addition, we summarize what is known concerning other nonlinear optical properties of these crystals, such as two-photon absorption, nonlinear refractive index, and stimulated Raman thresholds. A preliminary assessment is made of the potential of these materials for use in future high power, large aperture lasers such as those used for inertial confinement fusion experiments. 14 refs., 1 fig., 3 tabs

  2. High-power ultrashort fiber laser for solar cells micromachining

    Lecourt, J.-B.; Duterte, C.; Liegeois, F.; Lekime, D.; Hernandez, Y.; Giannone, D.

    2012-02-01

    We report on a high-power ultra-short fiber laser for thin film solar cells micromachining. The laser is based on Chirped Pulse Amplification (CPA) scheme. The pulses are stretched to hundreds of picoseconds prior to amplification and can be compressed down to picosecond at high energy. The repetition rate is adjustable from 100 kHz to 1 MHz and the optical average output power is close to 13 W (before compression). The whole setup is fully fibred, except the compressor achieved with bulk gratings, resulting on a compact and reliable solution for cold ablation.

  3. Status of the Novosibirsk high-power terahertz FEL

    Gavrilov, N.G.; Knyazev, B.A.; Kolobanov, E.I.; Kotenkov, V.V.; Kubarev, V.V.; Kulipanov, G.N.; Matveenko, A.N.; Medvedev, L.E.; Miginsky, S.V.; Mironenko, L.A.; Oreshkov, A.D.; Ovchar, V.K.; Popik, V.M.; Salikova, T.V.; Scheglov, M.A.; Serednyakov, S.S.; Shevchenko, O.A.; Skrinsky, A.N.; Tcheskidov, V.G.; Vinokurov, N.A.

    2007-01-01

    The first stage of Novosibirsk high-power free electron laser (FEL) was commissioned in 2003. It is based on the normal conducting CW energy recovery linac (ERL). Now the FEL provides electromagnetic radiation in the wavelength range 120-230 μm. The maximum average power is 400 W. The minimum measured linewidth is 0.3%, which is close to the Fourier-transform limit. Four user stations are in operation now. Manufacturing of the second stage of the FEL (based on the four-turn ERL) is in progress

  4. Applications of high power microwaves to atmospheric modification and measurement

    Benford, J.

    1993-01-01

    The current state of proposals to use high power microwaves in the atmosphere is reviewed. HPM has been proposed to aid in the conservation of stratospheric ozone by partial breakdown, facilitating chemistry to eliminate chlorine. Another proposal is over-the-horizon radar using a partial breakdown area in the ionosphere. A key to any such effort is rapid diagnosis of the state of the atmosphere before, during and after intervention. Technology requirements of these modification and measurement proposals are reviewed. The elements of an atmospheric modification program are identified and political, economic and ideological factors are discussed

  5. New sources of high-power coherent radiation

    Sprehngl, F.

    1985-01-01

    New sources of high-power coherent radiation in the wavelength range from millimeter to ultraviolet are reviewed. Physical mechanisms underlying concepts of free electrons laser, cyclotron resonance laser and other new radiation sources are described. Free electron lasers and cyclotron resonance lasers are shown to suggest excellent possibilities for solving problems of spectroscopy, plasma heating radar and accelerator technology. Results of experiments with free electron laser in the Compton mode using linear accelerators microtrons and storage rings are given. Trends in further investigations are shown

  6. Very high power THz radiation at Jefferson Lab

    Carr, G.L.; Martin, Michael C.; McKinney, Wayne R.; Jordan, K.; Neil, George R.; Williams, G.P.

    2002-01-01

    We report the production of high power (20 watts average, ∼;1 Megawatt peak) broadband THz light based on coherent emission from relativistic electrons. We describe the source, presenting theoretical calculations and their experimental verification. For clarity we compare this source with one based on ultrafast laser techniques, and in fact the radiation has qualities closely analogous to that produced by such sources, namely that it is spatially coherent, and comprises short duration pulses with transform-limited spectral content. In contrast to conventional THz radiation, however, the intensity is many orders of magnitude greater due to the relativistic enhancement

  7. High power ECCD experiments at W7-AS

    Maassberg, H.; Geiger, J.; Laqua, H.; Marushchenko, N.B.; Wendland, C.; Rome, M.

    2001-01-01

    At the W7-AS stellarator, high power electron cyclotron current drive (ECCD) experiments are analyzed. In these net-current-free discharges, the ECCD as well as the bootstrap current are feedback controlled by an inductive current. Based on measured profiles, the neoclassical predictions for the bootstrap and the inductive current densities as well as the ECCD from the linear adjoint approach with trapped particles included are calculated, and the current balance is checked. Launch-angle scans at fixed density as well as density scans at fixed launch-angle are described. (author)

  8. Stabilized High Power Laser for Advanced Gravitational Wave Detectors

    Willke, B; Danzmann, K; Fallnich, C; Frede, M; Heurs, M; King, P; Kracht, D; Kwee, P; Savage, R; Seifert, F; Wilhelm, R

    2006-01-01

    Second generation gravitational wave detectors require high power lasers with several 100W of output power and with very low temporal and spatial fluctuations. In this paper we discuss possible setups to achieve high laser power and describe a 200W prestabilized laser system (PSL). The PSL noise requirements for advanced gravitational wave detectors will be discussed in general and the stabilization scheme proposed for the Advanced LIGO PSL will be described. Special emphasis will be given to the most demanding power stabilization requirements and new results (RIN ≤ 4x10 -9 /√Hz) will be presented

  9. Static and dynamic high power, space nuclear electric generating systems

    Wetch, J.R.; Begg, L.L.; Koester, J.K.

    1985-01-01

    Space nuclear electric generating systems concepts have been assessed for their potential in satisfying future spacecraft high power (several megawatt) requirements. Conceptual designs have been prepared for reactor power systems using the most promising static (thermionic) and the most promising dynamic conversion processes. Component and system layouts, along with system mass and envelope requirements have been made. Key development problems have been identified and the impact of the conversion process selection upon thermal management and upon system and vehicle configuration is addressed. 10 references

  10. High Efficiency Power Converter for Low Voltage High Power Applications

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based......, and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often...

  11. High power testing of a 17 GHz photocathode RF gun

    Chen, S.C.; Danly, B.G.; Gonichon, J.

    1995-01-01

    The physics and technological issues involved in high gradient particle acceleration at high microwave (RF) frequencies are under study at MIT. The 17 GHz photocathode RF gun has a 1 1/2 cell (π mode) room temperature cooper cavity. High power tests have been conducted at 5-10 MW levels with 100 ns pulses. A maximum surface electric field of 250 MV/m was achieved. This corresponds to an average on-axis gradient of 150 MeV/m. The gradient was also verified by a preliminary electron beam energy measurement. Even high gradients are expected in our next cavity design

  12. Comparison of advanced high power underground cable designs

    Erb, J.; Heinz, W.; Hofmann, A.; Koefler, H.J.; Komarek, P.; Maurer, W.; Nahar, A.

    1975-09-01

    In this paper, advanced high power underground cable designs are compared in the light of available literature, of reports and information supplied by participating industries (AEG, BICC, CGE, Pirelli, Siemens), spontaneous contributions by EdF, France, BBC and Felten and Guilleaume Kabelwerke A.G., Germany, and Hitachi, Furukawa, Fujikura and Sumitomo, Japan, and earlier studies carried out at German public research centres. The study covers cables with forced cooling by oil or water, SF 6 -cables, polyethylene cables, cryoresistive and superconducting cables. (orig.) [de

  13. Gyrocon: a deflection-modulated, high-power microwave amplifier

    Tallerico, P.J.

    1977-10-01

    A large-signal, relativistic theory of the electron-field interaction in a new class of microwave amplifiers is presented and applied to the analysis of a high-power, 450-MHz amplifier for accelerator applications. The analysis indicates that electronic efficiencies in excess of 90 percent are obtainable and that overall efficiencies of 90 percent are possible. The amplifier is unique in several respects; the electron velocity is perpendicular to the circuit energy flow, the device uses a fast-wave circuit, and the electron beam is deflection modulated

  14. Organic nonlinear crystals and high power frequency conversion

    Velsko, S.P.; Davis, L.; Wang, F.; Monaco, S.; Eimerl, D.

    1987-01-01

    The authors are searching for new second and third harmonic generators among the salts of organic acids and bases. They discuss the relevant properties of crystals from this group of compounds, including their nonlinear and phasematching characteristics, linear absorption, damage threshold and crystal growth. In addition, they summarize what is known concerning other nonlinear optical properties of these crystals, such as two-photon absorption, nonlinear refractive index, and stimulated Raman thresholds. A preliminary assessment is made of the potential of these materials for use in future high power, large aperture lasers such as those used for inertial confinement fusion experiments

  15. Study on the near-field non-linearity (SMILE) of high power diode laser arrays

    Zhang, Hongyou; Jia, Yangtao; Li, Changxuan; Zah, Chung-en; Liu, Xingsheng

    2018-02-01

    High power laser diodes have been found a wide range of industrial, space, medical applications, characterized by high conversion efficiency, small size, light weight and a long lifetime. However, due to thermal induced stress, each emitter in a semiconductor laser bar or array is displaced along p-n junction, resulting of each emitter is not in a line, called Near-field Non-linearity. Near-field Non-linearity along laser bar (also known as "SMILE") determines the outcome of optical coupling and beam shaping [1]. The SMILE of a laser array is the main obstacle to obtain good optical coupling efficiency and beam shaping from a laser array. Larger SMILE value causes a larger divergence angle and a wider line after collimation and focusing, respectively. In this letter, we simulate two different package structures based on MCC (Micro Channel Cooler) with Indium and AuSn solders, including the distribution of normal stress and the SMILE value. According to the theoretical results, we found the distribution of normal stress on laser bar shows the largest in the middle and drops rapidly near both ends. At last, we did another experiment to prove that the SMILE value of a laser bar was mainly affected by the die bonding process, rather than the operating condition.

  16. Die attach dimension and material on thermal conductivity study for high power COB LED

    Sarukunaselan, K.; Ong, N. R.; Sauli, Z.; Mahmed, N.; Kirtsaeng, S.; Sakuntasathien, S.; Suppiah, S.; Alcain, J. B.; Retnasamy, V.

    2017-09-01

    High power LED began to gain popularity in the semiconductor market due to its efficiency and luminance. Nonetheless, along with the increased in efficiency, there was an increased in the junction temperature too. The alleviating junction temperature is undesirable since the performances and lifetime will be degraded over time. Therefore, it is crucial to solve this thermal problem by maximizing the heat dissipation to the ambience. Improvising the die attach (DA) layer would be the best option because this layer is sandwiched between the chip (heat source) and the substrate (channel to the ambient). In this paper, the impact of thickness and thermal conductivity onto the junction temperature and Von Mises stress is analyzed. Results obtained showed that the junction temperature is directly proportional to the thickness but the stress was inversely proportional to the thickness of the DA. The thermal conductivity of the materials did affect the junction temperature as there was not much changes once the thermal conductivity reached 20W/mK. However, no significant changes were observed on the Von Mises stress caused by the thermal conductivity. Material with the second highest thermal conductivity had the lowest stress, whereas the highest conductivity material had the highest stress value at 20 µm. Overall, silver sinter provided the best thermal dissipation compared to the other materials.

  17. High-power free-electron lasers-technology and future applications

    Socol, Yehoshua

    2013-03-01

    Free-electron laser (FEL) is an all-electric, high-power, high beam-quality source of coherent radiation, tunable - unlike other laser sources - at any wavelength within wide spectral region from hard X-rays to far-IR and beyond. After the initial push in the framework of the “Star Wars” program, the FEL technology benefited from decades of R&D and scientific applications. Currently, there are clear signs that the FEL technology reached maturity, enabling real-world applications. E.g., successful and unexpectedly smooth commissioning of the world-first X-ray FEL in 2010 increased in one blow by more than an order of magnitude (40×) wavelength region available by FEL technology and thus demonstrated that the theoretical predictions just keep true in real machines. Experience of ordering turn-key electron beamlines from commercial companies is a further demonstration of the FEL technology maturity. Moreover, successful commissioning of the world-first multi-turn energy-recovery linac demonstrated feasibility of reducing FEL size, cost and power consumption by probably an order of magnitude in respect to previous configurations, opening way to applications, previously considered as non-feasible. This review takes engineer-oriented approach to discuss the FEL technology issues, keeping in mind applications in the fields of military and aerospace, next generation semiconductor lithography, photo-chemistry and isotope separation.

  18. Defects in semiconductors

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  19. Introduction to Semiconductor Devices

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  20. Spin physics in semiconductors

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  1. Physics of semiconductor lasers

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  2. Semiconductors bonds and bands

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  3. Defects in semiconductors

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  4. High Power Modulator/regulators for neutral beam sources

    Lawson, J.Q.; Deitz, A.

    1975-01-01

    PPPL has recently completed two new Modulator/Regulators for neutral injection sources used on the ATC machine and is constructing four new ones for use with sources on the PLT machine. The ATC modulator uses the well proven 4CX35,000C tetrode as the main switch tube, while the PLT modulators will be using the new but significantly higher powered X-2170 tetrodes. Some interesting circuit and manufacturing techniques are discussed

  5. Latching micro optical switch

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  6. High power pulsed magnetron sputtering of transparent conducting oxides

    Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

    2008-01-01

    High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

  7. Material Processing with High Power CO2-Lasers

    Bakowsky, Lothar

    1986-10-01

    After a period of research and development lasertechnique now is regarded as an important instrument for flexible, economic and fully automatic manufacturing. Especially cutting of flat metal sheets with high power C02-lasers and CNC controlled two or three axes handling systems is a wide spread. application. Three dimensional laser cutting, laser-welding and -heat treatment are just at the be ginning of industrial use in production lines. The main. advantages of laser technology. are - high. accuracy - high, processing velocity - law thermal distortion. - no tool abrasion. The market for laser material processing systems had 1985 a volume of 300 Mio S with growth rates between, 20 % and 30 %. The topic of this lecture are hiTrh. power CO2-lasers. Besides this systems two others are used as machining tools, Nd-YAG- and Eximer lasers. All applications of high. power CO2-lasers to industrial material processing show that high processing velocity and quality are only guaranteed in case of a stable intensity. profile on the workpiece. This is only achieved by laser systems without any power and mode fluctuations and by handling systems of high accuracy. Two applications in the automotive industry are described, below as examples for laser cutting and laser welding of special cylindrical motor parts.

  8. High power nickel - cadmium cells with fiber electrodes (FNC)

    Haschka, F.; Schlieck, D.

    1986-01-01

    Nickel cadmium batteries differ greatly in their mechanical design and construction of the electrodes. Using available electrode constructions, batteries are designed which meet the requirements of specific applications and offer optimum performance. Pocket- and tubular cells are basically developed with the technology of the year 1895. Since then some improvements with todays technology have been made. The sintered cells use the technology of the 1930's and they are still limited to high power application. With this knowledge and the technology of today the fiber-structured nickel electrode (FNC) was developed at DAUG laboratory, a subsidiary company of Mercedes-Benz and Volkswagen. After ten years of experience in light weight prototype batteries for electric vehicles (1-2), the system was brought into production by a new company, DAUG-HOPPECKE. Characteristics of fiber electrodes: thickness and size can be easily changed; pure active materials are used; high conductor density; high elasticity of the structure; high porosity. Since 1983 NiCd-batteries with fiber-structured nickel electrodes (FNC) have been in production. Starting with the highly demanded cell-types for low, medium and high performance called L, M and H according to IEC 623 for low, medium and high performance applications, the program was recently completed with the X-type cell for very high power, as an alternative to sintered cells

  9. High speed micromachining with high power UV laser

    Patel, Rajesh S.; Bovatsek, James M.

    2013-03-01

    Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

  10. Development of high power pulsed CO2 laser

    Nakai, Sadao; Matoba, Masafumi; Fujita, Hisanori; Daido, Hiroyuki; Inoue, Mitsuo

    1982-01-01

    The inertial nuclear fusion research using pellet implosion has rapidly progressed accompanying laser technique improvement and output increase. As the high output lasers for this purpose, Nd glass lasers or CO 2 lasers are used. The CO 2 lasers possess the characteristics required as reactor lasers, i.e., high efficiency, high frequency repetition, possibility of scale-up and economy. So, the technical development of high power CO 2 lasers assuming also as reactor drivers has been performed at a quick pace together with the research on the improvement of efficiency of pellet implosion by 10 μm laser beam. The Institute of Laser Engineering, Osaka University, stated to build a laser system LEKKO No. 8 of 8 beams and 10 kJ based on the experiences in laser systems LEKKO No. 1 and LEKKO No. 2, and the system LEKKO No. 8 was completed in March, 1981. The operation tests for one year since then has indicated as the laser characteristics that the system performance was as designed initially. This paper reviews the structure, problems and present status of the large scale CO 2 lasers. In other words, the construction of laser system, CO 2 laser proper, oscillator, booster amplifier, prevention of parasitic oscillation, non-linear pulse propagation and fairing of output pulse form, system control and beam alignment, and high power problems are described. The results obtained are to be reported in subsequent issues. (Wakatsuki, Y.)

  11. High Power RF Transmitters for ICRF Applications on EAST

    Mao Yuzhou; Yuan Shuai; Zhao Yanping; Zhang Xinjun; Chen Gen; Cheng Yan; Wang Lei; Ju Songqing; Deng Xu; Qin Chengming; Yang Lei; Kumazawa, R.

    2013-01-01

    An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4 × 1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were designed as a part of the research and development (R and D) for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter: the three staged high power amplifier, which is composed of a 5 kW wideband solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply (HVPS). Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.

  12. Hybrid simulation of electrode plasmas in high-power diodes

    Welch, Dale R.; Rose, David V.; Bruner, Nichelle; Clark, Robert E.; Oliver, Bryan V.; Hahn, Kelly D.; Johnston, Mark D.

    2009-01-01

    New numerical techniques for simulating the formation and evolution of cathode and anode plasmas have been successfully implemented in a hybrid code. The dynamics of expanding electrode plasmas has long been recognized as a limiting factor in the impedance lifetimes of high-power vacuum diodes and magnetically insulated transmission lines. Realistic modeling of such plasmas is being pursued to aid in understanding the operating characteristics of these devices as well as establishing scaling relations for reliable extrapolation to higher voltages. Here, in addition to kinetic and fluid modeling, a hybrid particle-in-cell technique is described that models high density, thermal plasmas as an inertial fluid which transitions to kinetic electron or ion macroparticles above a prescribed energy. The hybrid technique is computationally efficient and does not require resolution of the Debye length. These techniques are first tested on a simple planar diode then applied to the evolution of both cathode and anode plasmas in a high-power self-magnetic pinch diode. The impact of an intense electron flux on the anode surface leads to rapid heating of contaminant material and diode impedance loss.

  13. Perspectives of high power ultrasound in food preservation

    Evelyn; Silva, F. V. M.

    2018-04-01

    High Power ultrasound can be used to alter physicochemical properties and improve the quality of foods during processing due to a number of mechanical, chemical, and biochemical effects arising from acoustic cavitation. Cavitation creates pressure waves that inactivate microbes and de-agglomerate bacterial clusters or release ascospores from fungal asci. Bacterial and heat resistant fungal spores’ inactivation is a great challenge in food preservation due to their ability to survive after conventional food processing, causing food-borne diseases or spoilage. In this work, a showcase of application of high power ultrasound combined with heat or thermosonication, to inactivate bacterial spores i.e. Bacillus cereus spores in beef slurry and fungal spores i.e. Neosartorya fischeri ascospores in apple juice was presented and compared with thermal processing. Faster inactivation was achieved at higher TS (24 KHz, 0.33 W/g or W/mL) temperatures. Around 2 log inactivation was obtained for B. cereus spores after1 min (70 °C) and N. fischeri ascospores after 30 min (75 °C). Thermal treatments caused <1 log in B. Cereus after 2 min (70 °C) and no inactivation in N. Fischeri ascospores after 30 min (80 °C). In conclusion, temperature plays a significant role for TS spore inactivation and TS was more effective than thermal treatment alone. The mould spores were more resistant than the bacterial spores.

  14. High power RF systems for the BNL ERL project

    Zaltsman, A.; Lambiase, R.

    2011-03-28

    The Energy Recovery Linac (ERL) project, now under construction at Brookhaven National Laboratory, requires two high power RF systems. The first RF system is for the 703.75 MHz superconducting electron gun. The RF power from this system is used to drive nearly half an Ampere of beam current to 2 MeV. There is no provision to recover any of this energy so the minimum amplifier power is 1 MW. It consists of 1 MW CW klystron, transmitter and power supplies, 1 MW circulator, 1 MW dummy load and a two-way power splitter. The second RF system is for the 703.75 MHz superconducting cavity. The system accelerates the beam to 54.7 MeV and recovers this energy. It will provide up to 50 kW of CW RF power to the cavity. It consists of 50 kW transmitter, circulator, and dummy load. This paper describes the two high power RF systems and presents the test data for both.

  15. Exploring novel high power density concepts for attractive fusion systems

    Abdou, M.A. [California State Univ., Los Angeles, CA (United States). Dept. of Mechanical Engineering; APEX Team

    1999-05-01

    The advanced power extraction study is aimed at exploring innovative concepts for fusion power technology (FPT) that can tremendously enhance the potential of fusion as an attractive and competitive energy source. Specifically, the study is exploring new and `revolutionary` concepts that can provide the capability to efficiently extract heat from systems with high neutron and surface heat loads while satisfying all the FPT functional requirements and maximizing reliability, maintainability, safety, and environmental requirements. The primary criteria for measuring performance of the new concepts are: (1) high power density capability with a peak neutron wall load (NWL) of {proportional_to}10 MW m{sup -2} and surface heat flux of {proportional_to}2 MW m{sup -2}; (2) high power conversion efficiency, {proportional_to}40% net; and (3) clear potential to achieve high availability; specifically low failure rate, large design margin, and short downtime for maintenance. A requirement that MTBF{>=}43 MTTR was derived as a necessary condition to achieve the required first wall/blanket availability, where MTBF is the mean time between failures and MTTR is the mean time to recover. Highlights of innovative and promising new concepts that may satisfy these criteria are provided. (orig.) 40 refs.

  16. Trends in high power laser applications in civil engineering

    Wignarajah, Sivakumaran; Sugimoto, Kenji; Nagai, Kaori

    2005-03-01

    This paper reviews the research and development efforts made on the use of lasers for material processing in the civil engineering industry. Initial investigations regarding the possibility of using lasers in civil engineering were made in the 1960s and '70s, the target being rock excavation. At that time however, the laser powers available were too small for any practical application utilization. In the 1980's, the technology of laser surface cleaning of historically important structures was developed in Europe. In the early 1990s, techniques of laser surface modification, including glazing and coloring of concrete, roughening of granite stones, carbonization of wood were pursued, mainly in Japan. In the latter part of the decade, techniques of laser decontamination of concrete surfaces in nuclear facilities were developed in many countries, and field tests were caried out in Japan. The rapid advances in development of diode lasers and YAG lasers with high power outputs and efficiencies since the late 1990's have led to a revival of worldwide interest in the use of lasers for material processing in civil engineering. The authors believe that, in the next 10 years or so, the advent of compact high power lasers is likely to lead to increased use of lasers of material processing in the field of civil engineering.

  17. Innovation on high-power long-pulse gyrotrons

    Litvak, Alexander; Sakamoto, Keishi; Thumm, Manfred

    2011-01-01

    Progress in the worldwide development of high-power gyrotrons for magnetic confinement fusion plasma applications is described. After technology breakthroughs in research on gyrotron components in the 1990s, significant progress has been achieved in the last decade, in particular, in the field of long-pulse and continuous wave (CW) gyrotrons for a wide range of frequencies. At present, the development of 1 MW-class CW gyrotrons has been very successful; these are applicable for self-ignition experiments on fusion plasmas and their confinement in the tokamak ITER, for long-pulse confinement experiments in the stellarator Wendelstein 7-X (W7-X) and for EC H and CD in the future tokamak JT-60SA. For this progress in the field of high-power long-pulse gyrotrons, innovations such as the realization of high-efficiency stable oscillation in very high order cavity modes, the use of single-stage depressed collectors for energy recovery, highly efficient internal quasi-optical mode converters and synthetic diamond windows have essentially contributed. The total tube efficiencies are around 50% and the purity of the fundamental Gaussian output mode is 97% and higher. In addition, activities for advanced gyrotrons, e.g. a 2 MW gyrotron using a coaxial cavity, multi-frequency 1 MW gyrotrons and power modulation technology, have made progress.

  18. Optical Fiber for High-Power Optical Communication

    Kenji Kurokawa

    2012-09-01

    Full Text Available We examined optical fibers suitable for avoiding such problems as the fiber fuse phenomenon and failures at bends with a high power input. We found that the threshold power for fiber fuse propagation in photonic crystal fiber (PCF and hole-assisted fiber (HAF can exceed 18 W, which is more than 10 times that in conventional single-mode fiber (SMF. We considered this high threshold power in PCF and HAF to be caused by a jet of high temperature fluid penetrating the air holes. We showed examples of two kinds of failures at bends in conventional SMF when the input power was 9 W. We also observed the generation of a fiber fuse under a condition that caused a bend-loss induced failure. We showed that one solution for the failures at bends is to use optical fibers with a low bending loss such as PCF and HAF. Therefore, we consider PCF and HAF to be attractive solutions to the problems of the fiber fuse phenomenon and failures at bends with a high power input.

  19. Design of high power solid-state pulsed laser resonators

    Narro, R.; Ponce, L.; Arronte, M.

    2009-01-01

    Methods and configurations for the design of high power solid-state pulsed laser resonators, operating in free running, are presented. For fundamental mode high power resonators, a method is proposed for the design of a resonator with joined stability zones. In the case of multimode resonators, two configurations are introduced for maximizing the laser overall efficiency due to the compensation of the astigmatism induced by the excitation. The first configuration consists in a triangular ring resonator. The results for this configuration are discussed theoretically, showing that it is possible to compensate the astigmatism of the thermal lens virtually in a 100%; however this is only possible for a specific pumping power. The second configuration proposes a dual-active medium resonator, rotated 90 degree one from the other around the optical axis, where each active medium acts as an astigmatic lens of the same dioptric power. The reliability of this configuration is corroborated experimentally using a Nd:YAG dual-active medium resonator. It is found that in the pumping power range where the astigmatism compensation is possible, the overall efficiency is constant, even when increasing the excitation power with the consequent increase of the thermal lens dioptric power. (Author)

  20. Nuclear based diagnostics in high-power laser applications

    Guenther, Marc; Sonnabend, Kerstin; Harres, Knut; Otten, Anke; Roth, Markus [TU Darmstadt, Institut fuer Kernphysik, Darmstadt (Germany); Vogt, Karsten; Bagnoud, Vincent [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany)

    2010-07-01

    High-power lasers allow focused intensities of >10{sup 18} W/cm{sup 2}. During the laser-solid interaction, an intense relativistic electron current is injected from the plasma into the target. One challenge is to characterize the electron dynamic close to the interaction region. Moreover, next generation high-power laser proton acceleration leads to high proton fluxes, which require novel, nuclear diagnostic techniques. We present an activation-based nuclear pyrometry for the investigation of electrons generated in relativistic laser-solid interactions. We use novel activation targets consisting of several isotopes with different photo-neutron disintegration thresholds. The electrons are decelerated inside the target via bremsstrahlung processes. The high-energy bremsstrahlung induces photo-nuclear reactions. In this energy range no disturbing low energy effects are important. Via the pyrometry the Reconstruction of the absolute yield, spectral and spatial distribution of the electrons is possible. For the characterization of proton beams we present a nuclear activation imaging spectroscopy (NAIS). The diagnostic is based on proton-neutron disintegration reactions of copper stacked in consecutive layers. An autoradiography of copper layers leads to spectrally and spatially reconstruction of the beam profile.

  1. Research on calorimeter for high-power microwave measurements

    Ye, Hu; Ning, Hui; Yang, Wensen; Tian, Yanmin; Xiong, Zhengfeng; Yang, Meng; Yan, Feng; Cui, Xinhong [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi’an, Shaanxi 710024 (China)

    2015-12-15

    Based on measurement of the volume increment of polar liquid that is a result of heating by absorbed microwave energy, two types of calorimeters with coaxial capacitive probes for measurement of high-power microwave energy are designed in this paper. The first is an “inline” calorimeter, which is placed as an absorbing load at the end of the output waveguide, and the second is an “offline” calorimeter that is placed 20 cm away from the radiation horn of the high-power microwave generator. Ethanol and high density polyethylene are used as the absorbing and housing materials, respectively. Results from both simulations and a “cold test” on a 9.3 GHz klystron show that the “inline” calorimeter has a measurement range of more than 100 J and an energy absorption coefficient of 93%, while the experimental results on a 9.3 GHz relativistic backward-wave oscillator show that the device’s power capacity is approximately 0.9 GW. The same experiments were also carried out for the “offline” calorimeter, and the results indicate that it can be used to eliminate the effects of the shock of the solenoid on the measurement curves and that the device has a higher power capacity of 2.5 GW. The results of the numerical simulations, the “cold tests,” and the experiments show good agreement.

  2. High-Power Lasers for Science and Society

    Siders, C. W. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Haefner, C. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2016-10-05

    Since the first demonstration of the laser in 1960 by Theodore Maiman at Hughes Research Laboratories, the principal defining characteristic of lasers has been their ability to focus unprecedented powers of light in space, time, and frequency. High-power lasers have, over the ensuing five and a half decades, illuminated entirely new fields of scientific endeavor as well as made a profound impact on society. While the United States pioneered lasers and their early applications, we have been eclipsed in the past decade by highly effective national and international networks in both Europe and Asia, which have effectively focused their energies, efforts, and resources to achieve greater scientific and societal impact. This white paper calls for strategic investment which, by striking an appropriate balance between distributing our precious national funds and establishing centers of excellence, will ensure a broad pipeline of people and transformative ideas connecting our world-leading universities, defining flagship facilities stewarded by our national laboratories, and driving innovation across industry, to fully exploit the potential of high-power lasers.

  3. Metallic plates lens focalizing a high power microwave beam

    Rebuffi, L.

    1987-08-01

    A metallic grating composed of thin parallel plates opportunely spaced, permits to correct the phase of an incident high power microwave beam. In this work we show how it is possible to obtain a beam focalisation (lens), a beam deflection (prisma), or a variation in the polarization (polarizer) using parallel metallic plates. The main design parameters are here presented, in order to obtain the wanted phase modification keeping low the diffraction, the reflected power, the ohmic losses and avoiding breakdowns. Following the given criteria, a metallic plate lens has been realized to focalize the 200 KW, 100 msec 60 GHz beam used in the ECRH experiment on the TFR tokamak. The experimental beam concentration followed satisfactory the design requirements. In fact, the maximum intensity increased about twice the value without lens. In correspondence of this distance a reduction of the beam size of about 50% have been measured for the -3 dB radius. The lens supported high power tests without breakdowns or increase of the reflected power

  4. Wavelength dependency in high power laser cutting and welding

    Havrilla, David; Ziermann, Stephan; Holzer, Marco

    2012-03-01

    Laser cutting and welding have been around for more than 30 years. Within those three decades there has never been a greater variety of high power laser types and wavelengths to choose from than there is today. There are many considerations when choosing the right laser for any given application - capital investment, cost of ownership, footprint, serviceability, along with a myriad of other commercial & economic considerations. However, one of the most fundamental questions that must be asked and answered is this - "what type of laser is best suited for the application?". Manufacturers and users alike are realizing what, in retrospect, may seem obvious - there is no such thing as a universal laser. In many cases there is one laser type and wavelength that clearly provides the highest quality application results. This paper will examine the application fields of high power, high brightness 10.6 & 1 micron laser welding & cutting and will provide guidelines for selecting the laser that is best suited for the application. Processing speed & edge quality serve as key criteria for cutting. Whereas speed, seam quality & spatter ejection provide the paradigm for welding.

  5. NdFeB magnets for high-power motors

    Oswald, B.; Soell, M.; Berberich, A.

    1998-01-01

    The use of REM in electric motors especially in the case of servo drives is state of the art today. Whether permanent magnet types SmCo or NdFeB are also suitable for high power main drives has to be decided regarding criteria which apply to high power machines. In this paper operation characteristics of common electric motors and especially those of drives with controlled speed are presented. In the case of electric motors with REM, increased output power and high efficiency at the same time are to be expected in comparison to classical drives. This makes them attractive for a number of applications. However their speed range is restricted for fundamental reasons as normally weakening of field is not possible. It is to be expected that due to their advantages the use of permanent magnet motors for elevated output power also will increase. Besides other forms they can be used also as special design such as e.g. round or flat linear motors. Their power density (force density) makes them attractive for numerous applications in this form. A comparison between permanent magnet motors with superconducting motors made of bulk HTS material gives insight into the wide area of future design of electrical machines. (orig.)

  6. Spallation Neutron Source High Power RF Installation and Commissioning Progress

    McCarthy, Michael P; Bradley, Joseph T; Fuja, Ray E; Gurd, Pamela; Hardek, Thomas; Kang, Yoon W; Rees, Daniel; Roybal, William; Young, Karen A

    2005-01-01

    The Spallation Neutron Source (SNS) linac will provide a 1 GeV proton beam for injection into the accumulator ring. In the normal conducting (NC) section of this linac, the Radio Frequency Quadupole (RFQ) and six drift tube linac (DTL) tanks are powered by seven 2.5 MW, 402.5 MHz klystrons and the four coupled cavity linac (CCL) cavities are powered by four 5.0 MW, 805 MHz klystrons. Eighty-one 550 kW, 805 MHz klystrons each drive a single cavity in the superconducting (SC) section of the linac. The high power radio frequency (HPRF) equipment was specified and procured by LANL and tested before delivery to ensure a smooth transition from installation to commissioning. Installation of RF equipment to support klystron operation in the 350-meter long klystron gallery started in June 2002. The final klystron was set in place in September 2004. Presently, all RF stations have been installed and high power testing has been completed. This paper reviews the progression of the installation and testing of the HPRF Sys...

  7. Research on calorimeter for high-power microwave measurements.

    Ye, Hu; Ning, Hui; Yang, Wensen; Tian, Yanmin; Xiong, Zhengfeng; Yang, Meng; Yan, Feng; Cui, Xinhong

    2015-12-01

    Based on measurement of the volume increment of polar liquid that is a result of heating by absorbed microwave energy, two types of calorimeters with coaxial capacitive probes for measurement of high-power microwave energy are designed in this paper. The first is an "inline" calorimeter, which is placed as an absorbing load at the end of the output waveguide, and the second is an "offline" calorimeter that is placed 20 cm away from the radiation horn of the high-power microwave generator. Ethanol and high density polyethylene are used as the absorbing and housing materials, respectively. Results from both simulations and a "cold test" on a 9.3 GHz klystron show that the "inline" calorimeter has a measurement range of more than 100 J and an energy absorption coefficient of 93%, while the experimental results on a 9.3 GHz relativistic backward-wave oscillator show that the device's power capacity is approximately 0.9 GW. The same experiments were also carried out for the "offline" calorimeter, and the results indicate that it can be used to eliminate the effects of the shock of the solenoid on the measurement curves and that the device has a higher power capacity of 2.5 GW. The results of the numerical simulations, the "cold tests," and the experiments show good agreement.

  8. Biggest semiconductor installed

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  9. Compact semiconductor lasers

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  10. High power ring methods and accelerator driven subcritical reactor application

    Tahar, Malek Haj [Univ. of Grenoble (France)

    2016-08-07

    High power proton accelerators allow providing, by spallation reaction, the neutron fluxes necessary in the synthesis of fissile material, starting from Uranium 238 or Thorium 232. This is the basis of the concept of sub-critical operation of a reactor, for energy production or nuclear waste transmutation, with the objective of achieving cleaner, safer and more efficient process than today’s technologies allow. Designing, building and operating a proton accelerator in the 500-1000 MeV energy range, CW regime, MW power class still remains a challenge nowadays. There is a limited number of installations at present achieving beam characteristics in that class, e.g., PSI in Villigen, 590 MeV CW beam from a cyclotron, SNS in Oakland, 1 GeV pulsed beam from a linear accelerator, in addition to projects as the ESS in Europe, a 5 MW beam from a linear accelerator. Furthermore, coupling an accelerator to a sub-critical nuclear reactor is a challenging proposition: some of the key issues/requirements are the design of a spallation target to withstand high power densities as well as ensure the safety of the installation. These two domains are the grounds of the PhD work: the focus is on the high power ring methods in the frame of the KURRI FFAG collaboration in Japan: upgrade of the installation towards high intensity is crucial to demonstrate the high beam power capability of FFAG. Thus, modeling of the beam dynamics and benchmarking of different codes was undertaken to validate the simulation results. Experimental results revealed some major losses that need to be understood and eventually overcome. By developing analytical models that account for the field defects, one identified major sources of imperfection in the design of scaling FFAG that explain the important tune variations resulting in the crossing of several betatron resonances. A new formula is derived to compute the tunes and properties established that characterize the effect of the field imperfections on the

  11. High Current, Multi-Filament Photoconductive Semiconductor Switching

    2011-06-01

    width (T=5 ns), and the volume in which the photons are absorbed ( lwd , where d=0.2-10 µm is the absorption depth, l=2.5 mm is the line length, and w=10...µm is the line width): n = (E/Eph) q (1-R) (1-e(- τ/T)) ⁄ ( lwd ) (1) The extremes for the values and ranges listed above give n=2×1017-5

  12. Optically coupled cavities for wavelength switching

    Costazo-Caso, Pablo A; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.ar, E-mail: granieri@rose-hulman.edu, E-mail: siahmako@rose-hulman.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

    2011-01-01

    An optical bistable device which presents hysteresis behavior is proposed and experimentally demonstrated. The system finds applications in wavelength switching, pulse reshaping and optical bistability. It is based on two optically coupled cavities named master and slave. Each cavity includes a semiconductor optical amplifier (SOA), acting as the gain medium of the laser, and two pair of fiber Bragg gratings (FBG) which define the lasing wavelength (being different in each cavity). Finally, a variable optical coupler (VOC) is employed to couple both cavities. Experimental characterization of the system performance is made analyzing the effects of the coupling coefficient between the two cavities and the driving current in each SOA. The properties of the hysteretic bistable curve and switching can be controlled by adjusting these parameters and the loss in the cavities. By selecting the output wavelength ({lambda}{sub 1} or {lambda}{sub 2}) with an external filter it is possible to choose either the invert or non-invert switched signal. Experiments were developed employing both optical discrete components and a photonic integrated circuit. They show that for 8 m-long cavities the maximum switching frequency is about 500 KHz, and for 4 m-long cavities a minimum rise-time about 21 ns was measured. The switching time can be reduced by shortening the cavity lengths and using photonic integrated circuits.

  13. Radiation effects in semiconductors

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  14. Market survey of semiconductors

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  15. Electronic properties of semiconductor heterostructures

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  16. Novel room temperature ferromagnetic semiconductors

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  17. Advances in high voltage power switching with GTOs

    Podlesak, T.F.

    1990-01-01

    The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. The authors report a high voltage opening switch has been successfully demonstrated. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This demonstration system is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly

  18. Latest development of high-power fiber lasers in SPI

    Norman, Stephen; Zervas, Mikhail N.; Appleyard, Andrew; Durkin, Michael K.; Horley, Ray; Varnham, Malcolm P.; Nilsson, Johan; Jeong, Yoonchan

    2004-06-01

    High Power Fiber Lasers (HPFLs) and High Power Fiber Amplifiers (HPFAs) promise a number of benefits in terms of their high optical efficiency, degree of integration, beam quality, reliability, spatial compactness and thermal management. These benefits are driving the rapid adoption of HPFLs in an increasingly wide range of applications and power levels ranging from a few Watts, in for example analytical applications, to high-power >1kW materials processing (machining and welding) applications. This paper describes SPI"s innovative technologies, HPFL products and their performance capabilities. The paper highlights key aspects of the design basis and provides an overview of the applications space in both the industrial and aerospace domains. Single-fiber CW lasers delivering 1kW output power at 1080nm have been demonstrated and are being commercialized for aerospace and industrial applications with wall-plug efficiencies in the range 20 to 25%, and with beam parameter products in the range 0.5 to 100 mm.mrad (corresponding to M2 = 1.5 to 300) tailored to application requirements. At power levels in the 1 - 200 W range, SPI"s proprietary cladding-pumping technology, GTWaveTM, has been employed to produce completely fiber-integrated systems using single-emitter broad-stripe multimode pump diodes. This modular construction enables an agile and flexible approach to the configuration of a range of fiber laser / amplifier systems for operation in the 1080nm and 1550nm wavelength ranges. Reliability modeling is applied to determine Systems martins such that performance specifications are robustly met throughout the designed product lifetime. An extensive Qualification and Reliability-proving programme is underway to qualify the technology building blocks that are utilized for the fiber laser cavity, pump modules, pump-driver systems and thermo-mechanical management. In addition to the CW products, pulsed fiber lasers with pulse energies exceeding 1mJ with peak pulse

  19. Complementary resistive switching in BaTiO{sub 3}/NiO bilayer with opposite switching polarities

    Li, Shuo [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Institut d’Electronique de Micro-électronique et de Nanotechnologie (IEMN), CNRS, Université des Sciences et Technologies de Lille, avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq cedex (France); Wei, Xianhua, E-mail: weixianhua@swust.edu.cn [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Lei, Yao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yuan, Xincai [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Zeng, Huizhong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)

    2016-12-15

    Graphical abstract: Au/BaTiO{sub 3}/NiO/Pt bilayer device shows complementary resistive switching (CRS) without electroforming which is mainly ascribed to anti-serial stack of two RRAM cells with bipolar behaviors. - Highlights: • Complementary resistive switching (CRS) has been investigated in Au/BaTiO{sub 3}/NiO/Pt by stacking the two elements with different switching types. • The realization of complementary resistive switching (CRS) is mainly ascribed to the anti-serial stack of two RRAM cells with bipolar behaviors. • Complementary resistive switching (CRS) in bilayer is effective to solve the sneak current problem briefly and economically. - Abstract: Resistive switching behaviors have been investigated in the Au/BaTiO{sub 3}/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO{sub 3} thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I–V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO{sub 3} and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  20. High-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser

    Zhuang, W Z; Chang, M T; Su, K W; Huang, K F; Chen, Y F

    2013-01-01

    We report on high-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser. A semiconductor saturable absorber mirror is developed to achieve synchronously mode-locked operation at two spectral bands centered at 1031.67 and 1049.42 nm with a pulse duration of 1.54 ps and a pulse repetition rate of 80.3 GHz. With a diamond heat spreader to improve the heat removal efficiency, the average output power can be up to 1.1 W at an absorbed pump power of 5.18 W. The autocorrelation traces reveal that the mode-locked pulse is modulated with a beat frequency of 4.92 THz and displays a modulation depth to be greater than 80%. (paper)

  1. System considerations for airborne, high power superconducting generators

    Southall, H.L.; Oberly, C.E.

    1979-01-01

    The design of rotating superconducting field windings in high power generators is greatly influenced by system considerations. Experience with two superconducting generators designed to produce 5 and 20 Mw resulted in a number of design restrictions. The design restrictions imposed by system considerations have not prevented low weight and high voltage power generation capability. The application of multifilament Nb;sub 3;Sn has permitted a large thermal margin to be designed into the rotating field winding. This margin permits the field winding to remain superconducting under severe system operational requirements. System considerations include: fast rotational startup, fast ramped magnetic fields, load induced transient fields and airborne cryogen logistics. Preliminary selection of a multifilament Nb;sub 3;Sn cable has resulted from these considerations. The cable will carry 864 amp at 8.5K and 6.8 Tesla. 10 refs

  2. Investigation of acoustic resonances in high-power lamps

    Kettlitz, M; Zalach, J; Rarbach, J

    2011-01-01

    High-power, medium-pressure, mercury-containing lamps are used as UV sources for many industrial applications. Lamps investigated in this paper are driven with an electronic ballast with a non-sinusoidal current waveform at a fixed frequency of 20 kHz and a maximum power output of 35 kW. Instabilities can occur if the input power is reduced below 50%. The reason is identified as acoustic resonances in the lamp. Comparison of calculated and measured resonance frequencies shows a good agreement and explains the observed lamp behaviour. This has led to the development of a new ballast prototype which is able to avoid instabilities by changing the driving frequency dependent on the applied power.

  3. Fast optical shutters for Nova, a high power fusion laser

    Bradley, L.P.; Gagnon, W.L.; Carder, B.M.

    1977-01-01

    Preliminary design and performance test results for fast optical shutters intended for use in the Nova high power fusion laser system are briefly described. Both an opening shutter to protect the pellet target from amplified spontaneous emission (ASE), and a closing shutter to protect the laser from light reflected back from the target are discussed. Faraday rotators, synchronized by a 400 Hz oscillator, provide an opening shutter mechanism with an opening time of approximately 10 μs. A plasma closing shutter, employing electrical sublimation of a foil, provide a shutter closing time of 70 ns +- 20 ns. Energy for foil sublimation is provided by discharge of a 42 J capacitor bank. Implementation of these shutter techniques in the Nova system is anticipated to improve laser output power and efficiency

  4. High power RF window deposition apparatus, method, and device

    Ives, Lawrence R.; Lucovsky, Gerald; Zeller, Daniel

    2017-07-04

    A process for forming a coating for an RF window which has improved secondary electron emission and reduced multipactor for high power RF waveguides is formed from a substrate with low loss tangent and desirable mechanical characteristics. The substrate has an RPAO deposition layer applied which oxygenates the surface of the substrate to remove carbon impurities, thereafter has an RPAN deposition layer applied to nitrogen activate the surface of the substrate, after which a TiN deposition layer is applied using Titanium tert-butoxide. The TiN deposition layer is capped with a final RPAN deposition layer of nitridation to reduce the bound oxygen in the TiN deposition layer. The resulting RF window has greatly improved titanium layer adhesion, reduced multipactor, and is able to withstand greater RF power levels than provided by the prior art.

  5. Advanced Electrodes for High Power Li-ion Batteries

    Christian M. Julien

    2013-03-01

    Full Text Available While little success has been obtained over the past few years in attempts to increase the capacity of Li-ion batteries, significant improvement in the power density has been achieved, opening the route to new applications, from hybrid electric vehicles to high-power electronics and regulation of the intermittency problem of electric energy supply on smart grids. This success has been achieved not only by decreasing the size of the active particles of the electrodes to few tens of nanometers, but also by surface modification and the synthesis of new multi-composite particles. It is the aim of this work to review the different approaches that have been successful to obtain Li-ion batteries with improved high-rate performance and to discuss how these results prefigure further improvement in the near future.

  6. High-power laser experiments to study collisionless shock generation

    Sakawa Y.

    2013-11-01

    Full Text Available A collisionless Weibel-instability mediated shock in a self-generated magnetic field is studied using two-dimensional particle-in-cell simulation [Kato and Takabe, Astophys. J. Lett. 681, L93 (2008]. It is predicted that the generation of the Weibel shock requires to use NIF-class high-power laser system. Collisionless electrostatic shocks are produced in counter-streaming plasmas using Gekko XII laser system [Kuramitsu et al., Phys. Rev. Lett. 106, 175002 (2011]. A NIF facility time proposal is approved to study the formation of the collisionless Weibel shock. OMEGA and OMEGA EP experiments have been started to study the plasma conditions of counter-streaming plasmas required for the NIF experiment using Thomson scattering and to develop proton radiography diagnostics.

  7. Reliability of high power electron accelerators for radiation processing

    Zimek, Z.

    2011-01-01

    Accelerators applied for radiation processing are installed in industrial facilities where accelerator availability coefficient should be at the level of 95% to fulfill requirements according to industry standards. Usually the exploitation of electron accelerator reviles the number of short and few long lasting failures. Some technical shortages can be overcome by practical implementation the experience gained in accelerator technology development by different accelerator manufactures. The reliability/availability of high power accelerators for application in flue gas treatment process must be dramatically improved to meet industrial standards. Support of accelerator technology dedicated for environment protection should be provided by governmental and international institutions to overcome accelerator reliability/availability problem and high risk and low direct profit in this particular application. (author)

  8. An adaptive crystal bender for high power synchrotron radiation beams

    Berman, L.E.; Hastings, J.B.

    1992-01-01

    Perfect crystal monochromators cannot diffract x-rays efficiently, nor transmit the high source brightness available at synchrotron radiation facilities, unless surface strains within the beam footprint are maintained within a few arcseconds. Insertion devices at existing synchrotron sources already produce x-ray power density levels that can induce surface slope errors of several arcseconds on silicon monochromator crystals at room temperature, no matter how well the crystal is cooled. The power density levels that will be produced by insertion devices at the third-generation sources will be as much as a factor of 100 higher still. One method of restoring ideal x-ray diffraction behavior, while coping with high power levels, involves adaptive compensation of the induced thermal strain field. The design and performance, using the X25 hybrid wiggler beam line at the National Synchrotron Light Source (NSLS), of a silicon crystal bender constructed for this purpose are described

  9. Prospects for high-power radioactive beam facilities worldwide

    Nolen, Jerry A

    2003-01-01

    Advances in accelerators, targets, ion sources, and experimental instrumentation are making possible ever more powerful facilities for basic and applied research with short-lived radioactive isotopes. There are several current generation facilities, based on a variety of technologies, operating worldwide. These include, for example, those based on the in-flight method such as the recently upgraded National Superconducting Cyclotron Laboratory at Michigan State University, the facility at RIKEN in Japan, GANIL in Caen, France, and GSI in Darmstadt, Germany. Present facilities based on the Isotope-Separator On-Line method include, for example, the ISOLDE laboratory at CERN, HRIBF at Oak Ridge, and the new high-power facility ISAC at TRIUMF in Vancouver. Next-generation facilities include the Radioactive-Ion Factory upgrade of RIKEN to higher energy and intensity and the upgrade of ISAC to a higher energy secondary beam; both of these projects are in progress. A new project, LINAG, to upgrade the capabilities at...

  10. Electron diode oscillators for high-power RF generation

    Humphries, S.

    1989-01-01

    Feedback oscillators have been used since the invention of the vacuum tube. This paper describes the extension of these familiar circuits to the regime of relativistic electron beam diodes. Such devices have potential application for the generation of high power RF radiation in the range 50-250 MHz, 1-10 GW with 20-60% conversion efficiency. This paper reviews the theory of the oscillator and the results of a design study. Calculations for the four-electrode diode with EGUN and EBQ show that good modulations of 30 kA electron beam at 600 kV can be achieved with moderate field stress on the electrodes. Conditions for oscillation have been studied with an in-house transmission line code. A design for a 7.5 GW oscillator at 200 MHz with 25% conversion efficiency is presented

  11. High Power Microwave Tubes: Basics and Trends, Volume 1

    Kesari, Vishal; Basu, B. N.

    2018-01-01

    Our aim in this book is to present a bird's-eye view of microwave tubes (MWTs) which continue to be important despite competitive incursions from solid-state devices (SSDs). We have presented a broad and introductory survey which we hope the readers would be encouraged to read rather than going through lengthier books, and subsequently explore the field of MWTs further in selected areas of relevance to their respective interests. We hope that the present book would motivate newcomers to pursue research in MWTs and apprise them as well as decision makers of the salient features and prospects of as well as the trends of progress in MWTs. The scope of ever expanding applications of MWTs in the high power and high frequency regime will sustain and intensify the research and development in MWTs in coming years.

  12. High Power Wind Generator Designs with Less or No PMs

    Boldea, Ion; Tutelea, Lucian; Blaabjerg, Frede

    2014-01-01

    synchronous generators, by doubly-fed (wound rotor) induction and cage induction generators and by introducing new topologies with pertinent costs for high power (MW range) wind energy conversion units. The present overview attempts, based on recent grid specifications, an evaluation of commercial and novel...... considering the interaction with the PWM converter in terms of power/speed range, losses, kVA, and costs) rather than on the control issues which abound in literature, will be of use for future R&D efforts in wind energy conversion, storage and use.......The recent steep increase in high energy permanent magnet (PM) price (above 130$/kg and more) triggered already strong R&D efforts to develop wind generators with less PMs (less weight in NdFeB magnets/kW or the use of ferrite PMs) or fully without PMs. All these by optimizing existing dc excited...

  13. High-power fiber lasers for photocathode electron injectors

    Zhi Zhao

    2014-05-01

    Full Text Available Many new applications for electron accelerators require high-brightness, high-average power beams, and most rely on photocathode-based electron injectors as a source of electrons. To achieve such a photoinjector, one requires both a high-power laser system to produce the high average current beam, and also a system at reduced repetition rate for electron beam diagnostics to verify high beam brightness. Here we report on two fiber laser systems designed to meet these specific needs, at 50 MHz and 1.3 GHz repetition rate, together with pulse pickers, second harmonic generation, spatiotemporal beam shaping, intensity feedback, and laser beam transport. The performance and flexibility of these laser systems have allowed us to demonstrate electron beam with both low emittance and high average current for the Cornell energy recovery linac.

  14. High power light gas helicon plasma source for VASIMR

    Squire, Jared P.; Chang-Diaz, Franklin R.; Glover, Timothy W.; Jacobson, Verlin T.; McCaskill, Greg E.; Winter, D. Scott; Baity, F. Wally; Carter, Mark D.; Goulding, Richard H.

    2006-01-01

    In the Advanced Space Propulsion Laboratory (ASPL) helicon experiment (VX-10) we have measured a plasma flux to input gas rate ratio near 100% for both helium and deuterium at power levels up to 10 kW. Recent results at Oak Ridge National Laboratory (ORNL) show enhanced efficiency operation with a high power density, over 5 kW in a 5 cm diameter tube. Our helicon is presently 9 cm in diameter and operates up to 10 kW of input power. The data here uses a Boswell double-saddle antenna design with a magnetic cusp just upstream of the antenna. Similar to ORNL, for deuterium at near 10 kW, we find an enhanced performance of operation at magnetic fields above the lower hybrid matching condition

  15. A thermosyphon heat pipe cooler for high power LEDs cooling

    Li, Ji; Tian, Wenkai; Lv, Lucang

    2016-08-01

    Light emitting diode (LED) cooling is facing the challenge of high heat flux more seriously with the increase of input power and diode density. The proposed unique thermosyphon heat pipe heat sink is particularly suitable for cooling of high power density LED chips and other electronics, which has a heat dissipation potential of up to 280 W within an area of 20 mm × 22 mm (>60 W/cm2) under natural air convection. Meanwhile, a thorough visualization investigation was carried out to explore the two phase flow characteristics in the proposed thermosyphon heat pipe. Implementing this novel thermosyphon heat pipe heat sink in the cooling of a commercial 100 W LED integrated chip, a very low apparent thermal resistance of 0.34 K/W was obtained under natural air convection with the aid of the enhanced boiling heat transfer at the evaporation side and the enhanced natural air convection at the condensation side.

  16. High power microwave emission and diagnostics of microsecond electron beams

    Gilgenbach, R; Hochman, J M; Jayness, R; Rintamaki, J I; Lau, Y Y; Luginsland, J; Lash, J S [Univ. of Michigan, Ann Arbor, MI (United States). Intense Electron Beam Interaction Lab.; Spencer, T A [Air Force Phillips Lab., Kirtland AFB, NM (United States)

    1997-12-31

    Experiments were performed to generate high power, long-pulse microwaves by the gyrotron mechanism in rectangular cross-section interaction cavities. Long-pulse electron beams are generated by MELBA (Michigan Electron Long Beam Accelerator), which operates with parameters: -0.8 MV, 1-10 kA, and 0.5-1 microsecond pulse length. Microwave power levels are in the megawatt range. Polarization control is being studied by adjustment of the solenoidal magnetic field. Initial results show polarization power ratios up to a factor of 15. Electron beam dynamics (V{sub perp}/V{sub par}) are being measured by radiation darkening on glass plates. Computer modeling utilizes the MAGIC Code for electromagnetic waves and a single electron orbit code that includes a distribution of angles. (author). 4 figs., 4 refs.

  17. Progress of compact Marx generators high power microwave source

    Liu Jinliang; Fan Xuliang; Bai Guoqiang; Cheng Xinbing

    2012-01-01

    The compact Marx generators, which can operate at a certain repetition frequency with small size, light weight, and high energy efficiency, are widely used in narrowband, wideband and ultra-wideband high power microwave (HPM) sources. This type of HPM source based on compact Marx generators is a worldwide research focus in recent years, and is important trend of development. The developments of this type of HPM source are described systemically in this paper. The output parameters and structural characteristics are reviewed, and the trends of development are discussed. This work provides reference and evidence for us to master the status of the HPM source based on compact Marx generators correctly and to explore its technical routes scientifically. (authors)

  18. Reliability of high power electron accelerators for radiation processing

    Zimek, Z. [Department of Radiation Chemistry and Technology, Institute of Nuclear Chemistry and Technology, Warsaw (Poland)

    2011-07-01

    Accelerators applied for radiation processing are installed in industrial facilities where accelerator availability coefficient should be at the level of 95% to fulfill requirements according to industry standards. Usually the exploitation of electron accelerator reviles the number of short and few long lasting failures. Some technical shortages can be overcome by practical implementation the experience gained in accelerator technology development by different accelerator manufactures. The reliability/availability of high power accelerators for application in flue gas treatment process must be dramatically improved to meet industrial standards. Support of accelerator technology dedicated for environment protection should be provided by governmental and international institutions to overcome accelerator reliability/availability problem and high risk and low direct profit in this particular application. (author)

  19. High-power CW LINAC for food irradiation

    Alimov, A.S.; Knapp, E.A.; Shvedunov, V.I.; Trower, W.P.

    2000-01-01

    The continuing high profile food poisoning incidents are beginning to attract food processors using electron and γ-ray sterilization technologies. The present method of choice uses radioactive isotopes but high-power electron particle accelerators are proving an increasingly attractive alternative. We are developing a family of compact industrial continuous wave linear accelerators which produce electrons with energies from 600 keV in increments of ∼600 keV and with beam power of 30 kW increasing in increments of 30 kW. Here, we describe the performance of our 1st section that accelerates 15 keV gun electrons to relativistic energies and then we sketch the design of the less demanding subsequent sections that we are now constructing

  20. High Power Diode Lasers with External Feedback: Overview and Prospects

    Chi, Mingjun; Petersen, Paul Michael

    2012-01-01

    In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...... with a good beam quality. Tapered diode laser systems with external-cavity feedback around 800 and 1060 nm can deliver more than 2 W output power with diffraction-limited beam quality and can be operated in single-longitudinal mode. These high-brightness, narrow linewidth, and tunable external-cavity diode...... lasers emerge as the next generation of compact lasers that have the potential of replacing conventional high power laser systems in many existing applications....