Teradiode's high brightness semiconductor lasers

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

2016-03-01

TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

Below-bandgap photoreflection spectroscopy of semiconductor laser structures

International Nuclear Information System (INIS)

Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

2004-01-01

A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

DEFF Research Database (Denmark)

Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

2009-01-01

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

Directory of Open Access Journals (Sweden)

Andreas Schmitt-Sody

2008-01-01

Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

International Nuclear Information System (INIS)

Deri, R.J.

2011-01-01

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Science.gov (United States)

Pierścińska, D.

2018-01-01

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

Science.gov (United States)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications 96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Numerical simulations of novel high-power high-brightness diode laser structures

Science.gov (United States)

Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

2001-07-01

One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

Blue 450nm high power semiconductor continuous wave laser bars exceeding rollover output power of 80W

Science.gov (United States)

König, H.; Lell, A.; Stojetz, B.; Ali, M.; Eichler, C.; Peter, M.; Löffler, A.; Strauss, U.; Baumann, M.; Balck, A.; Malchus, J.; Krause, V.

2018-02-01

Industrial material processing like cutting or welding of metals is rather energy efficient using direct diode or diode pumped solid state lasers. However, many applications cannot be addressed by established infrared laser technology due to fundamental material properties of the workpiece: For example materials like copper or gold have too low absorption in the near infrared wavelength range to be processed efficiently by use of existing high power laser systems. The huge interest to enable high power kW systems with more suitable wavelengths in the blue spectral range triggered the German funded research project 'BLAULAS': Therein the feasibility and capability of CW operating high power laser bars based on the GaN material system was investigated by Osram and Laserline. High performance bars were enabled by defeating fundamental challenges like material quality as well as the chip processes, both of which differ significantly from well-known IR laser bars. The research samples were assembled on actively cooled heat sinks with hard solder technology. For the first time an output power of 98W per bar at 60A drive current was achieved. Conversion efficiency as high as 46% at 50W output power was demonstrated.

Large-area high-power VCSEL pump arrays optimized for high-energy lasers

Science.gov (United States)

Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

2012-06-01

Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

The features of modelling semiconductor lasers with a wide contact

Directory of Open Access Journals (Sweden)

Rzhanov Alexey

2017-01-01

Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Erbert, G.; Sumpf, B.

2010-01-01

A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

High temperature semiconductor diode laser pumps for high energy laser applications

Science.gov (United States)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

International Nuclear Information System (INIS)

Cocquelin, B.

2009-02-01

Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

Delay induced high order locking effects in semiconductor lasers

Science.gov (United States)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

New power lasers

International Nuclear Information System (INIS)

Yamanaka, Masanobu; Daido, Hiroyuki; Imasaki, Kazuo.

1989-01-01

As the new power lasers which are expected to exert large extending effect to the fields of advanced science and technology including precision engineering as well as laser nuclear fusion, LD-excited solid laser, X-ray laser and free electron laser are taken up and outlined. Recently, the solid laser using high power output, high efficiency semiconductor laser as the exciting beam source has been developed. This is called laser diode (LD)-excited solid laser, and the heightening of power output and efficiency and the extension of life are planned. Its present status and application to medical use, laser machining, laser soldering and so on are described. In 1960, the laser in visible region appeared, however in 1985, the result of observing induced emission beam by electron collision exciting method was reported in USA. In the wavelength range of 200 A, holography and contact X-ray microscope applications were verified. The various types of soft X-ray laser and the perspective hereafter are shown. The principle of free electron laser is explained. In the free electron laser, wavelength can be changed by varying electron beam energy, the period of wiggler magnetic field and the intensity of magnetic field. Further, high efficiency and large power output are possible. Its present status, application and the perspective hereafter are reported. (K.I.)

Compact semiconductor lasers

CERN Document Server

Yu, Siyuan; Lourtioz, Jean-Michel

2014-01-01

This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

Key techniques for space-based solar pumped semiconductor lasers

Science.gov (United States)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Single frequency semiconductor lasers

CERN Document Server

Fang, Zujie; Chen, Gaoting; Qu, Ronghui

2017-01-01

This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

Experimental control of power dropouts by current modulation in a semiconductor laser with optical feedback

International Nuclear Information System (INIS)

Ticos, Catalin M; Andrei, Ionut R; Pascu, Mihail L; Bulinski, Mircea

2011-01-01

The injection current of an external-cavity semiconductor laser working in a regime of low-frequency fluctuations (LFFs) is modulated at several MHz. The rate of power dropouts in the laser emission is correlated with the amplitude and frequency of the modulating signal. The occurrence of dropouts becomes more regular when the laser is driven at 7 MHz, which is close to the dominant frequency of dropouts in the solitary laser. Driving the laser at 10 MHz also induces dropouts with a periodicity of 0.1 μs, resulting in LFFs with two dominant frequencies.

E-beam-pumped semiconductor lasers

Science.gov (United States)

Rice, Robert R.; Shanley, James F.; Ruggieri, Neil F.

1995-04-01

The collapse of the Soviet Union opened many areas of laser technology to the West. E-beam- pumped semiconductor lasers (EBSL) were pursued for 25 years in several Soviet Institutes. Thin single crystal screens of II-VI alloys (ZnxCd1-xSe, CdSxSe1-x) were incorporated in laser CRTs to produce scanned visible laser beams at average powers greater than 10 W. Resolutions of 2500 lines were demonstrated. MDA-W is conducting a program for ARPA/ESTO to assess EBSL technology for high brightness, high resolution RGB laser projection application. Transfer of II-VI crystal growth and screen processing technology is underway, and initial results will be reported. Various techniques (cathodoluminescence, one- and two-photon laser pumping, etc.) have been used to assess material quality and screen processing damage. High voltage (75 kV) video electronics were procured in the U.S. to operate test EBSL tubes. Laser performance was documented as a function of screen temperature, beam voltage and current. The beam divergence, spectrum, efficiency and other characteristics of the laser output are being measured. An evaluation of the effect of laser operating conditions upon the degradation rate is being carried out by a design-of-experiments method. An initial assessment of the projected image quality will be performed.

Design of pulsed laser diode drive power for ZY3(02) laser altimeter

Science.gov (United States)

Feng, Wen; Li, Mingshan; Meng, Peibei; Yan, Fanjiang; Li, Xu; Wang, Chunhui

2017-11-01

Solid laser pumped by semiconductor laser has the large value in the area of space laser technology, because of the advantages of high efficiency, small volume and long life. As the indispensable component of laser, laser power is also very important. Combined with ZY3(02) laser altimeter project, a high voltage(0-300V), high current(0-80A), long pulse width(0-230us) and high precision temperature semiconductor laser power is developed. IGBT is applied in the driving circuit as the switch to provide a current pulse for LD. The heating or cooling capacity of TEC is controlled by PID compensation circuit quickly adjusts the duty cycle of the UC1637 PWM signal, to realize the high accuracy controlling of LD working temperature. The tests in the external ambient temperature of 5°C, 20°C, 30°C show that the LD current pulse is stable and the stability of LD working temperature up to +/-0.1°C around the set point temperature, which ensure the highly stable operation of DPL.

Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

International Nuclear Information System (INIS)

Buldu, J M; Trull, J; Torrent, M C; GarcIa-Ojalvo, J; Mirasso, Claudio R

2002-01-01

The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

Energy Technology Data Exchange (ETDEWEB)

Buldu, J M [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Trull, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Torrent, M C [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); GarcIa-Ojalvo, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Mirasso, Claudio R [Departament de FIsica, Universitat de les Illes Balears, E-07071 Palma de Mallorca (Spain)

2002-02-01

The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

Energy Technology Data Exchange (ETDEWEB)

Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

2000-07-01

A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

Semiconductor Laser Measurements Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

High-power semiconductor RSD-based switch

Energy Technology Data Exchange (ETDEWEB)

Bezuglov, V G; Galakhov, I V; Grusin, I A [All-Russian Scientific Research Inst. of Experimental Physics, Sarov (Russian Federation); and others

1997-12-31

The operating principle and test results of a high-power semiconductor RSD-based switch with the following operating parameters is described: operating voltage 25 kV, peak operating current 200 kA, maximum transferred charge 70 C. The switch is intended for use by high-power capacitor banks of state-of-the-art research facilities. The switch was evaluated for applicability in commercial pulsed systems. The possibility of increasing the peak operating current to 500 kA is demonstrated. (author). 4 figs., 2 refs.

Physics of semiconductor lasers

CERN Document Server

Mroziewicz, B; Nakwaski, W

2013-01-01

Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

Optical Frequency Optimization of a High Intensity Laser Power Beaming System Utilizing VMJ Photovoltaic Cells

Science.gov (United States)

Raible, Daniel E.; Dinca, Dragos; Nayfeh, Taysir H.

2012-01-01

An effective form of wireless power transmission (WPT) has been developed to enable extended mission durations, increased coverage and added capabilities for both space and terrestrial applications that may benefit from optically delivered electrical energy. The high intensity laser power beaming (HILPB) system enables long range optical 'refueling" of electric platforms such as micro unmanned aerial vehicles (MUAV), airships, robotic exploration missions and spacecraft platforms. To further advance the HILPB technology, the focus of this investigation is to determine the optimal laser wavelength to be used with the HILPB receiver, which utilizes vertical multi-junction (VMJ) photovoltaic cells. Frequency optimization of the laser system is necessary in order to maximize the conversion efficiency at continuous high intensities, and thus increase the delivered power density of the HILPB system. Initial spectral characterizations of the device performed at the NASA Glenn Research Center (GRC) indicate the approximate range of peak optical-to-electrical conversion efficiencies, but these data sets represent transient conditions under lower levels of illumination. Extending these results to high levels of steady state illumination, with attention given to the compatibility of available commercial off-the-shelf semiconductor laser sources and atmospheric transmission constraints is the primary focus of this paper. Experimental hardware results utilizing high power continuous wave (CW) semiconductor lasers at four different operational frequencies near the indicated band gap of the photovoltaic VMJ cells are presented and discussed. In addition, the highest receiver power density achieved to date is demonstrated using a single photovoltaic VMJ cell, which provided an exceptionally high electrical output of 13.6 W/sq cm at an optical-to-electrical conversion efficiency of 24 percent. These results are very promising and scalable, as a potential 1.0 sq m HILPB receiver of

Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

International Nuclear Information System (INIS)

Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.

2000-01-01

A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

International Nuclear Information System (INIS)

Eliseev, P G

2012-01-01

A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

Laser vapor phase deposition of semiconductors

Energy Technology Data Exchange (ETDEWEB)

Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

1987-06-01

The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

Optics assembly for high power laser tools

Science.gov (United States)

Fraze, Jason D.; Faircloth, Brian O.; Zediker, Mark S.

2016-06-07

There is provided a high power laser rotational optical assembly for use with, or in high power laser tools for performing high power laser operations. In particular, the optical assembly finds applications in performing high power laser operations on, and in, remote and difficult to access locations. The optical assembly has rotational seals and bearing configurations to avoid contamination of the laser beam path and optics.

Influence of resonator length on catastrophic optical damage in high-power AlGaInP broad-area lasers

Science.gov (United States)

Bou Sanayeh, Marwan

2017-05-01

The increasing importance of extracting high optical power out of semiconductor lasers motivated several studies in catastrophic optical damage (COD) level improvement. In this study, the influence of the resonator length in high-power broad-area (BA) AlGaInP lasers on COD is presented. For the analyses, several 638 nm AlGaInP 60 μm BA lasers from the same wafer were used. Resonator lengths of 900, 1200, 1500, and 1800 μm were compared. In order to independently examine the effect of the resonator length on the maximum power reached by the lasers before COD (PCOD), the lasers used are uncoated and unmounted, and PCOD under pulsed mode was determined. It was found that higher output powers and eventually higher PCOD can be achieved using longer resonators; however, it was also found that this is mainly useful when working at high output powers far away from the laser threshold, since the threshold current and slope efficiency worsen when the resonator length increases.

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2013-01-01

This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2012-01-01

knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

International Nuclear Information System (INIS)

Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.

1994-01-01

Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2008-01-01

This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

Research of narrow pulse width, high repetition rate, high output power fiber lasers for deep space exploration

Science.gov (United States)

Tang, Yan-feng; Li, Hong-zuo; Wang, Yan; Hao, Zi-qiang; Xiao, Dong-Ya

2013-08-01

As human beings expand the research in unknown areas constantly, the deep space exploration has become a hot research topic all over the world. According to the long distance and large amount of information transmission characteristics of deep space exploration, the space laser communication is the preferred mode because it has the advantages of concentrated energy, good security, and large information capacity and interference immunity. In a variety of laser source, fibre-optical pulse laser has become an important communication source in deep space laser communication system because of its small size, light weight and large power. For fiber lasers, to solve the contradiction between the high repetition rate and the peak value power is an important scientific problem. General Q technology is difficult to obtain a shorter pulse widths, This paper presents a DFB semiconductor laser integrated with Electro-absorption modulator to realize the narrow pulse width, high repetition rate of the seed source, and then using a two-cascaded high gain fiber amplifier as amplification mean, to realize the fibre-optical pulse laser with pulse width 3ns, pulse frequency 200kHz and peak power 1kW. According to the space laser atmospheric transmission window, the wavelength selects for 1.06um. It is adopted that full fibre technology to make seed source and amplification, pumping source and amplification of free-space coupled into fiber-coupled way. It can overcome that fibre lasers are vulnerable to changes in external conditions such as vibration, temperature drift and other factors affect, improving long-term stability. The fiber lasers can be modulated by PPM mode, to realize high rate modulation, because of its peak power, high transmission rate, narrow pulse width, high frequency stability, all technical indexes meet the requirements of the exploration of deep space communication technology.

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Theory of semiconductor laser cooling

Science.gov (United States)

Rupper, Greg

Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

Science.gov (United States)

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

The high-power iodine laser

Science.gov (United States)

Brederlow, G.; Fill, E.; Witte, K. J.

The book provides a description of the present state of the art concerning the iodine laser, giving particular attention to the design and operation of pulsed high-power iodine lasers. The basic features of the laser are examined, taking into account aspects of spontaneous emission lifetime, hyperfine structure, line broadening and line shifts, stimulated emission cross sections, the influence of magnetic fields, sublevel relaxation, the photodissociation of alkyl iodides, flashlamp technology, excitation in a direct discharge, chemical excitation, and questions regarding the chemical kinetics of the photodissociation iodine laser. The principles of high-power operation are considered along with aspects of beam quality and losses, the design and layout of an iodine laser system, the scalability and prospects of the iodine laser, and the design of the single-beam Asterix III laser.

Water Vapour Propulsion Powered by a High-Power Laser-Diode

Science.gov (United States)

Minami, Y.; Uchida, S.

Most of the laser propulsion schemes now being proposed and developed assume neither power supplies nor on-board laser devices and therefore are bound to remote laser stations like a kite via a laser beam “string”. This is a fatal disadvantage for a space vehicle that flies freely though it is often said that no need of installing an energy source is an advantage of a laser propulsion scheme. The possibility of an independent laser propulsion space vehicle that carries a laser source and a power supply on board is discussed. This is mainly due to the latest development of high power laser diode (LD) technology. Both high specific impulse-low thrust mode and high thrust-low specific impulse mode can be selected by controlling the laser output by using vapour or water as a propellant. This mode change can be performed by switching between a high power continuous wave (cw), LD engine for high thrust with a low specific impulse mode and high power LD pumping Q-switched Nd:YAG laser engine for low thrust with the high specific impulse mode. This paper describes an Orbital Transfer Vehicle equipped with the above-mentioned laser engine system and fuel cell that flies to the Moon from a space platform or space hotel in Earth orbit, with cargo shipment from lunar orbit to the surface of the Moon, including the possibility of a sightseeing trip.

High power all solid state VUV lasers

International Nuclear Information System (INIS)

Zhang, Shen-jin; Cui, Da-fu; Zhang, Feng-feng; Xu, Zhi; Wang, Zhi-min; Yang, Feng; Zong, Nan; Tu, Wei; Chen, Ying; Xu, Hong-yan; Xu, Feng-liang; Peng, Qin-jun; Wang, Xiao-yang; Chen, Chuang-tian; Xu, Zu-yan

2014-01-01

Highlights: • Polarization and pulse repetition rate adjustable ps 177.3 nm laser was developed. • Wavelength tunable ns, ps and fs VUV lasers were developed. • High power ns 177.3 nm laser with narrow linewidth was investigated. - Abstract: We report the investigation on the high power all solid state vacuum ultra-violet (VUV) lasers by means of nonlinear frequency conversion with KBe 2 BO 3 F 2 (KBBF) nonlinear crystal. Several all solid state VUV lasers have developed in our group, including polarization and pulse repetition rate adjustable picosecond 177.3 nm VUV laser, wavelength tunable nanosecond, picosecond and femtosecond VUV lasers, high power ns 177.3 nm laser with narrow linewidth. The VUV lasers have impact, accurate and precise advantage

Squeezing in an injection-locked semiconductor laser

Science.gov (United States)

Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

1993-09-01

The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

Spherical distribution structure of the semiconductor laser diode stack for pumping

International Nuclear Information System (INIS)

Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

2011-01-01

A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

Laser Cooling of 2-6 Semiconductors

Science.gov (United States)

2016-08-12

AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

Toward continuous-wave operation of organic semiconductor lasers

Science.gov (United States)

Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-01-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

High speed micromachining with high power UV laser

Science.gov (United States)

Patel, Rajesh S.; Bovatsek, James M.

2013-03-01

Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

High-power pulsed lasers

International Nuclear Information System (INIS)

Holzrichter, J.F.

1980-01-01

The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization

Semiconductor lasers and herterojunction leds

CERN Document Server

Kressel, Henry

2012-01-01

Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

FY1995 ultra-high performance semiconductor lasers for advanced optical information network; 1995 nendo kodo hikari joho tsushinmo e muketa kyokugen seino handotai laser

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

The purpose of this research was to study and develop ultra-high performance semiconductor light source devices that should facilitate construction of advanced optical information networks. The semiconductor devices mentioned above are enhanced and integrated versions of distributed feedback (DFB) lasers based on 'gain coupling', which the group of the research coordinator has been investigating as a pioneer in the world. This research aimed at development of ultra-high performance semiconductor lasers that surpass the first generation conventional DFB lasers in any respect, by strengthening important device characteristics for system applications of the gain-coupled DFB lasers. The achievements of this research are listed below : 1. In-situ characterization of As-P exchange in MOVPE 2. Development of 1.55 {mu}m gain-coupled DFB lasers of absorptive grating type 3. Establishment of measurement technique for gain-coupling coefficients 4. Enlargement of small signal modulation response by the absorptive grating 5. Prediction of lower analog modulation distortion 6. Characterization of reflection-induced noise 7. Proposal and Demonstration of wavelength trimming 8. Proposal and Fabrication of GC DFB laser triode (NEDO)

Modeling bidirectionally coupled single-mode semiconductor lasers

International Nuclear Information System (INIS)

Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.

2002-01-01

We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

Waveguide based external cavity semiconductor lasers

NARCIS (Netherlands)

Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

2012-01-01

We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

High average power solid state laser power conditioning system

International Nuclear Information System (INIS)

Steinkraus, R.F.

1987-01-01

The power conditioning system for the High Average Power Laser program at Lawrence Livermore National Laboratory (LLNL) is described. The system has been operational for two years. It is high voltage, high power, fault protected, and solid state. The power conditioning system drives flashlamps that pump solid state lasers. Flashlamps are driven by silicon control rectifier (SCR) switched, resonant charged, (LC) discharge pulse forming networks (PFNs). The system uses fiber optics for control and diagnostics. Energy and thermal diagnostics are monitored by computers

Fundamentals of semiconductor lasers

CERN Document Server

Numai, Takahiro

2015-01-01

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

High-power fiber-coupled pump lasers for fiber lasers

Science.gov (United States)

Kasai, Yohei; Aizawa, Takuya; Tanaka, Daiichiro

2018-02-01

We present high-power fiber-coupled pump modules utilized effectively for ultra-high power single-mode (SM) fiber lasers. Maximum output power of 392 W was achieved at 23 A for 915 nm pump, and 394 W for 976 nm pump. Fiber core diameter is 118 μm and case temperature is 25deg. C. Polarization multiplexing technique was newly applied to our optical system. High-reliability of the laser diodes (LD) at high-power operation has been demonstrated by aging tests. Advanced package structure was developed that manages uncoupled light around input end of the fiber. 800 hours continuous drive with uncoupled light power of 100 W has been achieved.

Amplified spontaneous emission and thermal management on a high average-power diode-pumped solid-state laser - the Lucia laser system

International Nuclear Information System (INIS)

Albach, D.

2010-01-01

The development of the laser triggered the birth of numerous fields in both scientific and industrial domains. High intensity laser pulses are a unique tool for light/matter interaction studies and applications. However, current flash-pumped glass-based systems are inherently limited in repetition-rate and efficiency. Development within recent years in the field of semiconductor lasers and gain media drew special attention to a new class of lasers, the so-called Diode Pumped Solid State Laser (DPSSL). DPSSLs are highly efficient lasers and are candidates of choice for compact, high average-power systems required for industrial applications but also as high-power pump sources for ultra-high intense lasers. The work described in this thesis takes place in the context of the 1 kilowatt average-power DPSSL program Lucia, currently under construction at the 'Laboratoire d'Utilisation des Laser Intenses' (LULI) at the Ecole Polytechnique, France. Generation of sub-10 nanosecond long pulses with energies of up to 100 joules at repetition rates of 10 hertz are mainly limited by Amplified Spontaneous Emission (ASE) and thermal effects. These limitations are the central themes of this work. Their impact is discussed within the context of a first Lucia milestone, set around 10 joules. The developed laser system is shown in detail from the oscillator level to the end of the amplification line. A comprehensive discussion of the impact of ASE and thermal effects is completed by related experimental benchmarks. The validated models are used to predict the performances of the laser system, finally resulting in a first activation of the laser system at an energy level of 7 joules in a single-shot regime and 6.6 joules at repetition rates up to 2 hertz. Limitations and further scaling approaches are discussed, followed by an outlook for the further development. (author) [fr

High power laser exciter accelerators

International Nuclear Information System (INIS)

Martin, T.H.

1975-01-01

Recent developments in untriggered oil and water switching now permit the construction of compact, high energy density pulsed power sources for laser excitation. These accelerators, developed principally for electron beam fusion studies, appear adaptable to laser excitation and will provide electron beams of 10 13 to 10 14 W in the next several years. The accelerators proposed for e-beam fusion essentially concentrate the available power from the outside edge of a disk into the central region where the electron beam is formed. One of the main problem areas, that of power flow at the vacuum diode insulator, is greatly alleviated by the multiplicity of electron beams that are allowable for laser excitation. A proposal is made whereby the disk-shaped pulsed power sections are stacked vertically to form a series of radially flowing electron beams to excite the laser gas volume. (auth)

High Power Vanadate lasers

CSIR Research Space (South Africa)

Strauss

2006-07-01

Full Text Available stream_source_info Strauss1_2006.pdf.txt stream_content_type text/plain stream_size 3151 Content-Encoding UTF-8 stream_name Strauss1_2006.pdf.txt Content-Type text/plain; charset=UTF-8 Laser Research Institute... University of Stellenbosch www.laser-research.co.za High Power Vanadate lasers H.J.Strauss, Dr. C. Bollig, R.C. Botha, Prof. H.M. von Bergmann, Dr. J.P. Burger Aims 1) To develop new techniques to mount laser crystals, 2) compare the lasing properties...

2 W high efficiency PbS mid-infrared surface emitting laser

Science.gov (United States)

Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

2011-09-01

High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

8. High power laser and ignition facilities

International Nuclear Information System (INIS)

Bayramian, A.J.; Beach, R.J.; Bibeau, C.

2002-01-01

This document gives a review of the various high power laser projects and ignition facilities in the world: the Mercury laser system and Electra (Usa), the krypton fluoride (KrF) laser and the HALNA (high average power laser for nuclear-fusion application) project (Japan), the Shenguang series, the Xingguang facility and the TIL (technical integration line) facility (China), the Vulcan peta-watt interaction facility (UK), the Megajoule project and its feasibility phase: the LIL (laser integration line) facility (France), the Asterix IV/PALS high power laser facility (Czech Republic), and the Phelix project (Germany). In Japan the 100 TW Petawatt Module Laser, constructed in 1997, is being upgraded to the world biggest peta-watt laser. Experiments have been performed with single-pulse large aperture e-beam-pumped Garpun (Russia) and with high-current-density El-1 KrF laser installation (Russia) to investigate Al-Be foil transmittance and stability to multiple e-beam irradiations. An article is dedicated to a comparison of debris shield impacts for 2 experiments at NIF (national ignition facility). (A.C.)

Atmospheric Propagation and Combining of High-Power Lasers

Science.gov (United States)

2015-09-08

Brightness-scaling potential of actively phase- locked solid state laser arrays,” IEEE J. Sel. Topics Quantum Electron., vol. 13, no. 3, pp. 460–472, May...attempting to phase- lock high-power lasers, which is not encountered when phase- locking low-power lasers, for example mW power levels. Regardless, we...technology does not currently exist. This presents a challenging problem when attempting to phase- lock high-power lasers, which is not encountered when

High power laser research and development at the Laboratory for Laser Energetics

International Nuclear Information System (INIS)

Soures, J.M.; McCrory, R.L.; Cerqua, K.A.

1986-01-01

As part of its research mission - to investigate the interaction of intense radiation with matter - the Laboratory for Laser Energetics (LLE) of the University of Rochester is developing a number of high-peak power and high-average-power laser systems. In this paper we highlight some of the LLE work on solid-state laser research, development and applications. Specifically, we discuss the performance and operating characteristics of Omega, a twenty-four beam, 4000 Joule, Nd:glass laser system which is frequently tripled using the polarization mismatch scheme. We also discuss progress in efforts to develop high-average-power solid-state laser systems with active-mirror and slab geometries and to implement liquid-crystal devices in high-power Nd:glass lasers. Finally we present results from a program to develop a compact, ultrahigh-peak-power solid-state laser using the concept of frequency chirped pulse amplification

Comparison of Square and Radial Geometries for High Intensity Laser Power Beaming Receivers

Science.gov (United States)

Raible, Daniel E.; Fast, Brian R.; Dinca, Dragos; Nayfeh, Taysir H.; Jalics, Andrew K.

2012-01-01

In an effort to further advance a realizable form of wireless power transmission (WPT), high intensity laser power beaming (HILPB) has been developed for both space and terrestrial applications. Unique optical-to-electrical receivers are employed with near infrared (IR-A) continuous-wave (CW) semiconductor lasers to experimentally investigate the HILPB system. In this paper, parasitic feedback, uneven illumination and the implications of receiver array geometries are considered and experimental hardware results for HILPB are presented. The TEM00 Gaussian energy profile of the laser beam presents a challenge to the effectiveness of the receiver to perform efficient photoelectric conversion, due to the resulting non-uniform illumination of the photovoltaic cell arrays. In this investigation, the geometry of the receiver is considered as a technique to tailor the receiver design to accommodate the Gaussian beam profile, and in doing so it is demonstrated that such a methodology is successful in generating bulk receiver output power levels reaching 25 W from 7.2 sq cm of photovoltaic cells. These results are scalable, and may be realized by implementing receiver arraying and utilizing higher power source lasers to achieve a 1.0 sq m receiver capable of generating over 30 kW of electrical power. This type of system would enable long range optical "refueling" of electric platforms, such as MUAV s, airships, robotic exploration missions and provide power to spacecraft platforms which may utilize it to drive electric means of propulsion. In addition, a smaller HILPB receiver aperture size could be utilized to establish a robust optical communications link within environments containing high levels of background radiance, to achieve high signal to noise ratios.

Overview on the high power excimer laser technology

Science.gov (United States)

Liu, Jingru

2013-05-01

High power excimer laser has essential applications in the fields of high energy density physics, inertial fusion energy and industry owing to its advantages such as short wavelength, high gain, wide bandwidth, energy scalable and repetition operating ability. This overview is aimed at an introduction and evaluation of enormous endeavor of the international high power excimer laser community in the last 30 years. The main technologies of high power excimer laser are reviewed, which include the pumping source technology, angular multiplexing and pulse compressing, beam-smoothing and homogenous irradiation, high efficiency and repetitive operation et al. A high power XeCl laser system developed in NINT of China is described in detail.

Management of gingival hyperpigmentation by semiconductor diode laser

Directory of Open Access Journals (Sweden)

Geeti Gupta

2011-01-01

Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

Material Processing with High Power CO2-Lasers

Science.gov (United States)

Bakowsky, Lothar

1986-10-01

After a period of research and development lasertechnique now is regarded as an important instrument for flexible, economic and fully automatic manufacturing. Especially cutting of flat metal sheets with high power C02-lasers and CNC controlled two or three axes handling systems is a wide spread. application. Three dimensional laser cutting, laser-welding and -heat treatment are just at the be ginning of industrial use in production lines. The main. advantages of laser technology. are - high. accuracy - high, processing velocity - law thermal distortion. - no tool abrasion. The market for laser material processing systems had 1985 a volume of 300 Mio S with growth rates between, 20 % and 30 %. The topic of this lecture are hiTrh. power CO2-lasers. Besides this systems two others are used as machining tools, Nd-YAG- and Eximer lasers. All applications of high. power CO2-lasers to industrial material processing show that high processing velocity and quality are only guaranteed in case of a stable intensity. profile on the workpiece. This is only achieved by laser systems without any power and mode fluctuations and by handling systems of high accuracy. Two applications in the automotive industry are described, below as examples for laser cutting and laser welding of special cylindrical motor parts.

Frequency locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers

International Nuclear Information System (INIS)

Zhao Yiguang

1991-01-01

The method of obtaining self-consistent solutions of the field equation and the rate equations of photon density and carrier concentration has been used to study frequecny locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers. The results show that the chaotic behavior arises in self-pulsing stripe geometry semiconductor lasers. The route to chaos is not period-double, but quasiperiodicity to chaos. All of the results agree with the experiments. Some obscure points in previous theory about chaos have been cleared up

Design and evaluation of modelocked semiconductor lasers for low noise and high stability

DEFF Research Database (Denmark)

Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

2005-01-01

We present work on design of monolithic mode-locked semiconductor lasers with focus on the gain medium. The use of highly inverted quantum wells in a low-loss waveguide enables both low quantum noise, low-chirped pulses and a large stability region. Broadband noise measurements are performed...

Interaction of high power ultrashort laser pulses with plasmas

International Nuclear Information System (INIS)

Geissler, M.

2000-12-01

The invention of short laser-pulses has opened a vast application range from testing ultra high-speed semiconductor devices to precision material processing, from triggering and tracing chemical reactions to sophisticated surgical applications in opthalmology and neurosurgery. In physical science, ultrashort light pulses enable researchers to follow ultrafast relaxation processes in the microcosm on time scale never before accessible and study light-matter-interactions at unprecedented intensity levels. The aim of this thesis is to investigate the interaction of ultrashort high power laser pulses with plasmas for a broad intensity range. First the ionization of atoms with intense laser fields is investigated. For sufficient strong and low frequent laser pulses, electrons can be removed from the core by a tunnel process through a potential barrier formed by the electric field of the laser. This mechanism is described by a well-established theory, but the interaction of few-cycle laser pulses with atoms can lead to regimes where the tunnel theory loses its validity. This regime is investigated and a new description of the ionization is found. Although the ionization plays a major role in many high-energy laser processes, there exist no simple and complete model for the evolution of laser pulses in field-ionizing media. A new propagation equation and the polarization response for field-ionizing media are presented and the results are compared with experimental data. Further the interaction of high power laser radiation with atoms result in nonlinear response of the electrons. The spectrum of this induced nonlinear dipole moment reaches beyond visible wavelengths into the x-ray regime. This effect is known as high harmonic generation (HHG) and is a promising tool for the generation of coherent shot wavelength radiation, but the conversions are still not efficient enough for most practical applications. Phase matching schemes to overcome the limitation are discussed

Temperature controller of semiconductor laser

Czech Academy of Sciences Publication Activity Database

Matoušek, Vít; Číp, Ondřej

2003-01-01

Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

High Average Power, High Energy Short Pulse Fiber Laser System

Energy Technology Data Exchange (ETDEWEB)

Messerly, M J

2007-11-13

Recently continuous wave fiber laser systems with output powers in excess of 500W with good beam quality have been demonstrated [1]. High energy, ultrafast, chirped pulsed fiber laser systems have achieved record output energies of 1mJ [2]. However, these high-energy systems have not been scaled beyond a few watts of average output power. Fiber laser systems are attractive for many applications because they offer the promise of high efficiency, compact, robust systems that are turn key. Applications such as cutting, drilling and materials processing, front end systems for high energy pulsed lasers (such as petawatts) and laser based sources of high spatial coherence, high flux x-rays all require high energy short pulses and two of the three of these applications also require high average power. The challenge in creating a high energy chirped pulse fiber laser system is to find a way to scale the output energy while avoiding nonlinear effects and maintaining good beam quality in the amplifier fiber. To this end, our 3-year LDRD program sought to demonstrate a high energy, high average power fiber laser system. This work included exploring designs of large mode area optical fiber amplifiers for high energy systems as well as understanding the issues associated chirped pulse amplification in optical fiber amplifier systems.

Semiconductor laser technology for remote sensing experiments

Science.gov (United States)

Katz, Joseph

1988-01-01

Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

High power diode lasers converted to the visible

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.

2017-01-01

High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....

Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

Science.gov (United States)

Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

2016-03-01

Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

Semiconductor laser engineering, reliability and diagnostics a practical approach to high power and single mode devices

CERN Document Server

Epperlein, Peter W

2013-01-01

This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performa...

High-power free-electron lasers-technology and future applications

Science.gov (United States)

Socol, Yehoshua

2013-03-01

Free-electron laser (FEL) is an all-electric, high-power, high beam-quality source of coherent radiation, tunable - unlike other laser sources - at any wavelength within wide spectral region from hard X-rays to far-IR and beyond. After the initial push in the framework of the “Star Wars” program, the FEL technology benefited from decades of R&D and scientific applications. Currently, there are clear signs that the FEL technology reached maturity, enabling real-world applications. E.g., successful and unexpectedly smooth commissioning of the world-first X-ray FEL in 2010 increased in one blow by more than an order of magnitude (40×) wavelength region available by FEL technology and thus demonstrated that the theoretical predictions just keep true in real machines. Experience of ordering turn-key electron beamlines from commercial companies is a further demonstration of the FEL technology maturity. Moreover, successful commissioning of the world-first multi-turn energy-recovery linac demonstrated feasibility of reducing FEL size, cost and power consumption by probably an order of magnitude in respect to previous configurations, opening way to applications, previously considered as non-feasible. This review takes engineer-oriented approach to discuss the FEL technology issues, keeping in mind applications in the fields of military and aerospace, next generation semiconductor lithography, photo-chemistry and isotope separation.

Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating

International Nuclear Information System (INIS)

Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.

1989-01-01

Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW

Lifetime laser damage performance of β-Ga2O3 for high power applications

Directory of Open Access Journals (Sweden)

Jae-Hyuck Yoo

2018-03-01

Full Text Available Gallium oxide (Ga2O3 is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2. This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

Lifetime laser damage performance of β -Ga2O3 for high power applications

Science.gov (United States)

Yoo, Jae-Hyuck; Rafique, Subrina; Lange, Andrew; Zhao, Hongping; Elhadj, Selim

2018-03-01

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

International Nuclear Information System (INIS)

Rantamäki, Antti; Lyytikäinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G

2011-01-01

The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

Optically pumped semiconductor lasers for atomic and molecular physics

Science.gov (United States)

Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

2015-03-01

Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

Frequency modulation of semiconductor disk laser pulses

Energy Technology Data Exchange (ETDEWEB)

Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

2015-07-31

A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

New generation of compact high power disk lasers

Science.gov (United States)

Feuchtenbeiner, Stefanie; Zaske, Sebastian; Schad, Sven-Silvius; Gottwald, Tina; Kuhn, Vincent; Kumkar, Sören; Metzger, Bernd; Killi, Alexander; Haug, Patrick; Speker, Nicolai

2018-02-01

New technological developments in high power disk lasers emitting at 1030 nm are presented. These include the latest generation of TRUMPF's TruDisk product line offering high power disk lasers with up to 6 kW output power and beam qualities of up to 4 mm*mrad. With these compact devices a footprint reduction of 50% compared to the previous model could be achieved while at the same time improving robustness and increasing system efficiency. In the context of Industry 4.0, the new generation of TruDisk lasers features a synchronized data recording of all sensors, offering high-quality data for virtual analyses. The lasers therefore provide optimal hardware requirements for services like Condition Monitoring and Predictive Maintenance. We will also discuss its innovative and space-saving cooling architecture. It allows operation of the laser under very critical ambient conditions. Furthermore, an outlook on extending the new disk laser platform to higher power levels will be given. We will present a disk laser with 8 kW laser power out of a single disk with a beam quality of 5 mm*mrad using a 125 μm fiber, which makes it ideally suited for cutting and welding applications. The flexibility of the disk laser platform also enables the realization of a wide variety of beam guiding setups. As an example a new scheme called BrightLine Weld will be discussed. This technology allows for an almost spatter free laser welding process, even at high feed rates.

The pursuit of electrically-driven organic semiconductor lasers

NARCIS (Netherlands)

Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

2014-01-01

Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

High-powered CO2 -lasers and noise control

Science.gov (United States)

Honkasalo, Antero; Kuronen, Juhani

High-power CO2 -lasers are being more and more widely used for welding, drilling and cutting in machine shops. In the near future, different kinds of surface treatments will also become routine practice with laser units. The industries benefitting most from high power lasers will be: the automotive industry, shipbuilding, the offshore industry, the aerospace industry, the nuclear and the chemical processing industries. Metal processing lasers are interesting from the point of view of noise control because the working tool is a laser beam. It is reasonable to suppose that the use of such laser beams will lead to lower noise levels than those connected with traditional metal processing methods and equipment. In the following presentation, the noise levels and possible noise-control problems attached to the use of high-powered CO2 -lasers are studied.

Development of high-power CO2 lasers and laser material processing

Science.gov (United States)

Nath, Ashish K.; Choudhary, Praveen; Kumar, Manoj; Kaul, R.

2000-02-01

Scaling laws to determine the physical dimensions of the active medium and optical resonator parameters for designing convective cooled CO2 lasers have been established. High power CW CO2 lasers upto 5 kW output power and a high repetition rate TEA CO2 laser of 500 Hz and 500 W average power incorporated with a novel scheme for uniform UV pre- ionization have been developed for material processing applications. Technical viability of laser processing of several engineering components, for example laser surface hardening of fine teeth of files, laser welding of martensitic steel shroud and titanium alloy under-strap of turbine, laser cladding of Ni super-alloy with stellite for refurbishing turbine blades were established using these lasers. Laser alloying of pre-placed SiC coating on different types of aluminum alloy, commercially pure titanium and Ti-6Al-4V alloy, and laser curing of thermosetting powder coating have been also studied. Development of these lasers and results of some of the processing studies are briefly presented here.

High-Temperature, Wirebondless, Ultra-Compact Wide Bandgap Power Semiconductor Modules for Space Power Systems, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Silicon carbide (SiC) and other wide band-gap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and...

Solid state pump lasers with high power and high repetition rate

International Nuclear Information System (INIS)

Oba, Masaki; Kato, Masaaki; Arisawa, Takashi

1995-01-01

We built a laser diode pumped solid state green laser (LDPSSGL) rated at high repetition rate. Two laser heads are placed in one cavity with a rotator in between to design to avoid thermal lensing and thermal birefringence effect. Although average green laser power higher than 10 W was obtained at 1 kHz repetition rate with pulse width of 20-30 nsec, the beam quality was so much deteriorated that energy efficiency was as low as 2 %. Learning from this experience that high power oscillator causes a lot of thermal distortion not only in the laser rod but also in the Q-switch device, we proceeded to built a oscillator/amplifier system. A low power oscillator has a slab type crystal in the cavity. As a result spatial distribution of laser power was extremely improved. As we expect that the high repetition rate solid state laser should be CW operated Q-switch type laser from the view point of lifetime of diode lasers, a conventional arc lamp pumped CW Q-switch green YAG laser of which the repetition rate is changeable from 1 kHz to 5 kHz and the pulse width is 250-570 nsec was also tested to obtain pumping characteristics of a dye laser as a function of power, pulse width etc., and dye laser pulse width of 100-130 nsec were obtained. (author)

Laser wakefield acceleration with high-power, few-cycle mid-IR lasers

OpenAIRE

Papp, Daniel; Wood, Jonathan C.; Gruson, Vincent; Bionta, Mina; Gruse, Jan-Niclas; Cormier, Eric; Najmudin, Zulfikar; Légaré, François; Kamperidis, Christos

2018-01-01

The study of laser wakefield electron acceleration (LWFA) using mid-IR laser drivers is a promising path for future laser driven electronaccelerators, when compared to traditional near-IR laser drivers uperating at 0.8-1 {\\mu}m central wavelength ({\\lambda}laser), as the necessary vector potential a_0 for electron injection can be achieved with smaller laser powers due to the linear dependence on {\\lambda}laser. In this work, we perform 2D PIC simulations on LWFA using few-cycle high power (5...

High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

Science.gov (United States)

Elmes, John

2015-01-01

Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

Science.gov (United States)

Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

2010-02-01

Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

Development of a high power femtosecond laser

CSIR Research Space (South Africa)

Neethling, PH

2010-10-01

Full Text Available The Laser Research Institute and the CSIR National Laser Centre are developing a high power femtosecond laser system in a joint project with a phased approach. The laser system consists of an fs oscillator and a regenerative amplifier. An OPCPA...

Quality and performance of laser cutting with a high power SM fiber laser

DEFF Research Database (Denmark)

Kristiansen, Morten; Selchau, Jacob; Olsen, F. O.

2013-01-01

The introduction of high power single mode fiber lasers allows for a beam of high power and a good beam quality factor (M2 ” 1.2), compared to the multimode fiber lasers often utilised in macro laser metal cutting. This paper describes fundamental studies of macro laser metal cutting with a singl...

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Science.gov (United States)

Saxena, Dhruv

The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

High-Power Lasers for Science and Society

Energy Technology Data Exchange (ETDEWEB)

Siders, C. W. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Haefner, C. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2016-10-05

Since the first demonstration of the laser in 1960 by Theodore Maiman at Hughes Research Laboratories, the principal defining characteristic of lasers has been their ability to focus unprecedented powers of light in space, time, and frequency. High-power lasers have, over the ensuing five and a half decades, illuminated entirely new fields of scientific endeavor as well as made a profound impact on society. While the United States pioneered lasers and their early applications, we have been eclipsed in the past decade by highly effective national and international networks in both Europe and Asia, which have effectively focused their energies, efforts, and resources to achieve greater scientific and societal impact. This white paper calls for strategic investment which, by striking an appropriate balance between distributing our precious national funds and establishing centers of excellence, will ensure a broad pipeline of people and transformative ideas connecting our world-leading universities, defining flagship facilities stewarded by our national laboratories, and driving innovation across industry, to fully exploit the potential of high-power lasers.

Improved cutting performance in high power laser cutting

DEFF Research Database (Denmark)

Olsen, Flemming Ove

2003-01-01

Recent results in high power laser cutting especially with focus on cutting of mild grade steel types for shipbuilding are described.......Recent results in high power laser cutting especially with focus on cutting of mild grade steel types for shipbuilding are described....

Modelling colliding-pulse mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Bischoff, Svend

or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

Design of a high-power, high-brightness Nd:YAG solar laser.

Science.gov (United States)

Liang, Dawei; Almeida, Joana; Garcia, Dário

2014-03-20

A simple high-power, high-brightness Nd:YAG solar laser pumping approach is presented in this paper. The incoming solar radiation is both collected and concentrated by four Fresnel lenses and redirected toward a Nd:YAG laser head by four plane-folding mirrors. A fused-silica secondary concentrator is used to compress the highly concentrated solar radiation to a laser rod. Optimum pumping conditions and laser resonator parameters are found through ZEMAX and LASCAD numerical analysis. Solar laser power of 96 W is numerically calculated, corresponding to the collection efficiency of 24  W/m². A record-high solar laser beam brightness figure of merit of 9.6 W is numerically achieved.

High Power Fiber Laser Test Bed

Data.gov (United States)

Federal Laboratory Consortium — This facility, unique within DoD, power-combines numerous cutting-edge fiber-coupled laser diode modules (FCLDM) to integrate pumping of high power rare earth-doped...

Physics of laser fusion. Volume III. High-power pulsed lasers

International Nuclear Information System (INIS)

Holzrichter, J.F.; Eimerl, D.; George, E.V.; Trenholme, J.B.; Simmons, W.W.; Hunt, J.T.

1982-09-01

High-power pulsed lasers can deliver sufficient energy on inertial-confinement fusion (ICF) time scales (0.1 to 10 ns) to heat and compress deuterium-tritium fuel to fusion-reaction conditions. Several laser systems have been examined, including Nd:glass, CO 2 , KrF, and I 2 , for their ICF applicability. A great deal of developmental effort has been applied to the Nd:glass laser and the CO 2 gas laser systems; these systems now deliver > 10 4 J and 20 x 10 12 W to ICF targets. We are constructing the Nova Nd:glass laser at LLNL to provide > 100 kJ and > 100 x 10 12 W of 1-μm radiation for fusion experimentation in the mid-1980s. For ICF target gain > 100 times the laser input, we expect that the laser driver must deliver approx. 3 to 5 MJ of energy on a time scale of 10 to 20 ns. In this paper we review the technological status of fusion-laser systems and outline approaches to constructing high-power pulsed laser drivers

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

Science.gov (United States)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

In-volume heating using high-power laser diodes

NARCIS (Netherlands)

Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

2015-01-01

High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface

A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2018-01-01

. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

High-resolution wavefront control of high-power laser systems

International Nuclear Information System (INIS)

Brase, J.; Brown, C.; Carrano, C.; Kartz, M.; Olivier, S.; Pennington, D.; Silva, D.

1999-01-01

Nearly every new large-scale laser system application at LLNL has requirements for beam control which exceed the current level of available technology. For applications such as inertial confinement fusion, laser isotope separation, laser machining, and laser the ability to transport significant power to a target while maintaining good beam quality is critical. There are many ways that laser wavefront quality can be degraded. Thermal effects due to the interaction of high-power laser or pump light with the internal optical components or with the ambient gas are common causes of wavefront degradation. For many years, adaptive optics based on thing deformable glass mirrors with piezoelectric or electrostrictive actuators have be used to remove the low-order wavefront errors from high-power laser systems. These adaptive optics systems have successfully improved laser beam quality, but have also generally revealed additional high-spatial-frequency errors, both because the low-order errors have been reduced and because deformable mirrors have often introduced some high-spatial-frequency components due to manufacturing errors. Many current and emerging laser applications fall into the high-resolution category where there is an increased need for the correction of high spatial frequency aberrations which requires correctors with thousands of degrees of freedom. The largest Deformable Mirrors currently available have less than one thousand degrees of freedom at a cost of approximately $1M. A deformable mirror capable of meeting these high spatial resolution requirements would be cost prohibitive. Therefore a new approach using a different wavefront control technology is needed. One new wavefront control approach is the use of liquid-crystal (LC) spatial light modulator (SLM) technology for the controlling the phase of linearly polarized light. Current LC SLM technology provides high-spatial-resolution wavefront control, with hundreds of thousands of degrees of freedom, more

Forward voltage short-pulse technique for measuring high power laser array junction temperature

Science.gov (United States)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Welding with high power fiber lasers - A preliminary study

International Nuclear Information System (INIS)

Quintino, L.; Costa, A.; Miranda, R.; Yapp, D.; Kumar, V.; Kong, C.J.

2007-01-01

The new generation of high power fiber lasers presents several benefits for industrial purposes, namely high power with low beam divergence, flexible beam delivery, low maintenance costs, high efficiency and compact size. This paper presents a brief review of the development of high power lasers, and presents initial data on welding of API 5L: X100 pipeline steel with an 8 kW fiber laser. Weld bead geometry was evaluated and transition between conduction and deep penetration welding modes was investigated

Advanced excimer laser technologies enable green semiconductor manufacturing

Science.gov (United States)

Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

2014-03-01

"Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

High power laser downhole cutting tools and systems

Science.gov (United States)

Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

2015-01-20

Downhole cutting systems, devices and methods for utilizing 10 kW or more laser energy transmitted deep into the earth with the suppression of associated nonlinear phenomena. Systems and devices for the laser cutting operations within a borehole in the earth. These systems and devices can deliver high power laser energy down a deep borehole, while maintaining the high power to perform cutting operations in such boreholes deep within the earth.

Effect of gain nonlinearity in semiconductor lasers

DEFF Research Database (Denmark)

Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

1988-01-01

Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

Department of Defense high power laser program guidance

Science.gov (United States)

Muller, Clifford H.

1994-06-01

The DoD investment of nominally $200 million per year is focused on four high power laser (HPL) concepts: Space-Based Laser (SBL), a Ballistic Missile Defense Organization effort that addresses boost-phase intercept for Theater Missile Defense and National Missile Defense; Airborne Laser (ABL), an Air Force effort that addresses boost-phase intercept for Theater Missile Defense; Ground-Based Laser (GBL), an Air Force effort addressing space control; and Anti-Ship Missile Defense (ASMD), a Navy effort addressing ship-based defense. Each organization is also supporting technology development with the goal of achieving less expensive, brighter, and lighter high power laser systems. These activities represent the building blocks of the DoD program to exploit the compelling characteristics of the high power laser. Even though DoD's HPL program are focused and moderately strong, additional emphasis in a few technical areas could help reduce risk in these programs. In addition, a number of options are available for continuing to use the High-Energy Laser System Test Facility (HELSTF) at White Sands Missile Range. This report provides a brief overview and guidance for the five efforts which comprise the DoD HPL program (SBL, ABL, GBL, ASMD, HELSTF).

Diode lasers and arrays

International Nuclear Information System (INIS)

Streifer, W.

1988-01-01

This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

A study on the optical parts for a semiconductor laser module

Energy Technology Data Exchange (ETDEWEB)

Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)

2014-11-15

A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

Semiconductor ring lasers coupled by a single waveguide

Science.gov (United States)

Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

2012-06-01

We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

High-power planar dielectric waveguide lasers

International Nuclear Information System (INIS)

Shepherd, D.P.; Hettrick, S.J.; Li, C.; Mackenzie, J.I.; Beach, R.J.; Mitchell, S.C.; Meissner, H.E.

2001-01-01

The advantages and potential hazards of using a planar waveguide as the host in a high-power diode-pumped laser system are described. The techniques discussed include the use of proximity-coupled diodes, double-clad waveguides, unstable resonators, tapers, and integrated passive Q switches. Laser devices are described based on Yb 3+ -, Nd 3+ -, and Tm 3+ -doped YAG, and monolithic and highly compact waveguide lasers with outputs greater than 10 W are demonstrated. The prospects for scaling to the 100 W level and for further integration of devices for added functionality in a monolithic laser system are discussed. (author)

Switchable semiconductor optical fiber laser incorporating AWG and broadband FBG with high SMSR

International Nuclear Information System (INIS)

Ahmad, H; Zulkifli, M Z; Thambiratnam, K; Latiff, A A; Harun, S W

2009-01-01

In this paper we propose and demonstrate a switchable wavelength fiber laser (SWFL) using a semiconductor optical amplifier (SOA) together with an arrayed waveguide grating (AWG). The proposed SOA-based SWFL is capable of generating up to 14 lasing channels from 1530.1 nm to 1534.9 nm at a channel spacing of 0.8 nm (100 GHz) and a bandwidth of 11.8 and 10.2 nm respectively. The EDFA-based SWFL has a higher peak power at –5 dBm, while to SOA-based SWFL has a peak power of only –10 dBm. However, the SOA-based SWFL exhibits a much better SMSR of between 10 to 20 dB as compared to the SMSR of the EDFA-based SWFL due to the inhomogeneous broadening properties of the SOA

Study on the near-field non-linearity (SMILE) of high power diode laser arrays

Science.gov (United States)

Zhang, Hongyou; Jia, Yangtao; Li, Changxuan; Zah, Chung-en; Liu, Xingsheng

2018-02-01

High power laser diodes have been found a wide range of industrial, space, medical applications, characterized by high conversion efficiency, small size, light weight and a long lifetime. However, due to thermal induced stress, each emitter in a semiconductor laser bar or array is displaced along p-n junction, resulting of each emitter is not in a line, called Near-field Non-linearity. Near-field Non-linearity along laser bar (also known as "SMILE") determines the outcome of optical coupling and beam shaping [1]. The SMILE of a laser array is the main obstacle to obtain good optical coupling efficiency and beam shaping from a laser array. Larger SMILE value causes a larger divergence angle and a wider line after collimation and focusing, respectively. In this letter, we simulate two different package structures based on MCC (Micro Channel Cooler) with Indium and AuSn solders, including the distribution of normal stress and the SMILE value. According to the theoretical results, we found the distribution of normal stress on laser bar shows the largest in the middle and drops rapidly near both ends. At last, we did another experiment to prove that the SMILE value of a laser bar was mainly affected by the die bonding process, rather than the operating condition.

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.

2016-12-29

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Comprehensive and fully self-consistent modeling of modern semiconductor lasers

International Nuclear Information System (INIS)

Nakwaski, W.; Sarzał, R. P.

2016-01-01

The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers depends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered conditions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-burning effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures. (paper)

Advances in high power linearly polarized fiber laser and its application

Science.gov (United States)

Zhou, Pu; Huang, Long; Ma, Pengfei; Xu, Jiangming; Su, Rongtao; Wang, Xiaolin

2017-10-01

Fiber lasers are now attracting more and more research interest due to their advantages in efficiency, beam quality and flexible operation. Up to now, most of the high power fiber lasers have random distributed polarization state. Linearlypolarized (LP) fiber lasers, which could find wide application potential in coherent detection, coherent/spectral beam combining, nonlinear frequency conversion, have been a research focus in recent years. In this paper, we will present a general review on the achievements of various kinds of high power linear-polarized fiber laser and its application. The recent progress in our group, including power scaling by using power amplifier with different mechanism, high power linearly polarized fiber laser with diversified properties, and various applications of high power linear-polarized fiber laser, are summarized. We have achieved 100 Watt level random distributed feedback fiber laser, kilowatt level continuous-wave (CW) all-fiber polarization-maintained fiber amplifier, 600 watt level average power picosecond polarization-maintained fiber amplifier and 300 watt level average power femtosecond polarization-maintained fiber amplifier. In addition, high power linearly polarized fiber lasers have been successfully applied in 5 kilowatt level coherent beam combining, structured light field and ultrasonic generation.

CO2 laser pulse switching by optically excited semiconductors

International Nuclear Information System (INIS)

Silva, V.L. da.

1986-01-01

The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

Transient Plasma Photonic Crystals for High-Power Lasers.

Science.gov (United States)

Lehmann, G; Spatschek, K H

2016-06-03

A new type of transient photonic crystals for high-power lasers is presented. The crystal is produced by counterpropagating laser beams in plasma. Trapped electrons and electrically forced ions generate a strong density grating. The lifetime of the transient photonic crystal is determined by the ballistic motion of ions. The robustness of the photonic crystal allows one to manipulate high-intensity laser pulses. The scheme of the crystal is analyzed here by 1D Vlasov simulations. Reflection or transmission of high-power laser pulses are predicted by particle-in-cell simulations. It is shown that a transient plasma photonic crystal may act as a tunable mirror for intense laser pulses. Generalizations to 2D and 3D configurations are possible.

The Modulation Response of a Semiconductor Laser Amplifier

DEFF Research Database (Denmark)

Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi

1999-01-01

We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss i...

Control system for high power laser drilling workover and completion unit

Science.gov (United States)

Zediker, Mark S; Makki, Siamak; Faircloth, Brian O; DeWitt, Ronald A; Allen, Erik C; Underwood, Lance D

2015-05-12

A control and monitoring system controls and monitors a high power laser system for performing high power laser operations. The control and monitoring system is configured to perform high power laser operation on, and in, remote and difficult to access locations.

Potential of high-average-power solid state lasers

International Nuclear Information System (INIS)

Emmett, J.L.; Krupke, W.F.; Sooy, W.R.

1984-01-01

We discuss the possibility of extending solid state laser technology to high average power and of improving the efficiency of such lasers sufficiently to make them reasonable candidates for a number of demanding applications. A variety of new design concepts, materials, and techniques have emerged over the past decade that, collectively, suggest that the traditional technical limitations on power (a few hundred watts or less) and efficiency (less than 1%) can be removed. The core idea is configuring the laser medium in relatively thin, large-area plates, rather than using the traditional low-aspect-ratio rods or blocks. This presents a large surface area for cooling, and assures that deposited heat is relatively close to a cooled surface. It also minimizes the laser volume distorted by edge effects. The feasibility of such configurations is supported by recent developments in materials, fabrication processes, and optical pumps. Two types of lasers can, in principle, utilize this sheet-like gain configuration in such a way that phase and gain profiles are uniformly sampled and, to first order, yield high-quality (undistorted) beams. The zig-zag laser does this with a single plate, and should be capable of power levels up to several kilowatts. The disk laser is designed around a large number of plates, and should be capable of scaling to arbitrarily high power levels

Optical engineering for high power laser applications

International Nuclear Information System (INIS)

Novaro, M.

1993-01-01

Laser facilities for Inertial Confinement Fusion (I.C.F.) experiments require laser and X ray optics able to withstand short pulse conditions. After a brief recall of high power laser system arrangements and of the characteristics of their optics, the authors will present some X ray optical developments

Development of high power pulsed CO2 laser

International Nuclear Information System (INIS)

Nakai, Sadao; Matoba, Masafumi; Fujita, Hisanori; Daido, Hiroyuki; Inoue, Mitsuo

1982-01-01

The inertial nuclear fusion research using pellet implosion has rapidly progressed accompanying laser technique improvement and output increase. As the high output lasers for this purpose, Nd glass lasers or CO 2 lasers are used. The CO 2 lasers possess the characteristics required as reactor lasers, i.e., high efficiency, high frequency repetition, possibility of scale-up and economy. So, the technical development of high power CO 2 lasers assuming also as reactor drivers has been performed at a quick pace together with the research on the improvement of efficiency of pellet implosion by 10 μm laser beam. The Institute of Laser Engineering, Osaka University, stated to build a laser system LEKKO No. 8 of 8 beams and 10 kJ based on the experiences in laser systems LEKKO No. 1 and LEKKO No. 2, and the system LEKKO No. 8 was completed in March, 1981. The operation tests for one year since then has indicated as the laser characteristics that the system performance was as designed initially. This paper reviews the structure, problems and present status of the large scale CO 2 lasers. In other words, the construction of laser system, CO 2 laser proper, oscillator, booster amplifier, prevention of parasitic oscillation, non-linear pulse propagation and fairing of output pulse form, system control and beam alignment, and high power problems are described. The results obtained are to be reported in subsequent issues. (Wakatsuki, Y.)

High-power laser diodes with high polarization purity

Science.gov (United States)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

Development of high-power dye laser chain

Science.gov (United States)

Konagai, Chikara; Kimura, Hironobu; Fukasawa, Teruichiro; Seki, Eiji; Abe, Motohisa; Mori, Hideo

2000-01-01

Copper vapor laser (CVL) pumped dye laser (DL) system, both in a master oscillator power amplifier (MOPA) configuration, has been developed for Atomic Vapor Isotope Separation program in Japan. Dye laser output power of about 500 W has been proved in long-term operations over 200 hours. High power fiber optic delivery system is utilized in order to efficiently transport kilowatt level CVL beams to the DL MOPA. Single model CVL pumped DL oscillator has been developed and worked for 200 hours within +/- 0.1 pm wavelength stability. Phase modulator for spreading spectrum to the linewidth of hyperfine structure has been developed and demonstrated.

Visible high power fiber coupled diode lasers

Science.gov (United States)

Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

2018-02-01

In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

High-power fiber lasers for photocathode electron injectors

Directory of Open Access Journals (Sweden)

Zhi Zhao

2014-05-01

Full Text Available Many new applications for electron accelerators require high-brightness, high-average power beams, and most rely on photocathode-based electron injectors as a source of electrons. To achieve such a photoinjector, one requires both a high-power laser system to produce the high average current beam, and also a system at reduced repetition rate for electron beam diagnostics to verify high beam brightness. Here we report on two fiber laser systems designed to meet these specific needs, at 50 MHz and 1.3 GHz repetition rate, together with pulse pickers, second harmonic generation, spatiotemporal beam shaping, intensity feedback, and laser beam transport. The performance and flexibility of these laser systems have allowed us to demonstrate electron beam with both low emittance and high average current for the Cornell energy recovery linac.

High-power CO laser and its potential applications

International Nuclear Information System (INIS)

Sato, Shunichi; Takahashi, Kunimitsu; Shimamoto, Kojiro; Takashima, Yoichi; Matsuda, Keiichi; Kuribayashi, Shizuma; Noda, Osamu; Imatake, Shigenori; Kondo, Motoe.

1995-01-01

The R and D program for the development of a high-power CO laser and its application technologies is described. Based on a self-sustained discharge excitation scheme, the available laser output has been successfully scaled to over 20 kW. The CO laser cutting experiments for thick metals have been performed in association with the decommissioning technologies development. Other potential applications, which include those based on photo chemical process, are reviewed. Recently demonstrated high-power tunable operation and room-temperature operation are also reported. (author)

Ring cavity surface emitting semiconductor lasers

International Nuclear Information System (INIS)

Mujagic, E.

2010-01-01

Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93 �

Industrial application of high power disk lasers

Science.gov (United States)

Brockmann, Rüdiger; Havrilla, David

2008-02-01

Laser welding has become one of the fastest growing areas for industrial laser applications. The increasing cost effectiveness of the laser process is enabled by the development of new highly efficient laser sources, such as the Disk laser, coupled with decreasing cost per Watt. TRUMPF introduced the Disk laser several years ago, and today it has become the most reliable laser tool on the market. The excellent beam quality and output powers of up to 10 kW enable its application in the automotive industry as well as in the range of thick plate welding, such as heavy construction and ship building. This serves as an overview of the most recent developments on the TRUMPF Disk laser and its industrial applications like cutting, welding, remote welding and hybrid welding, too. The future prospects regarding increased power and even further improved productivity and economics are presented.

Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

Energy Technology Data Exchange (ETDEWEB)

Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Dad, R. C. [Government P G College, Mandsaur (M P) (India); Ghosh, S. [School of Studies in Physics, Vikram University, Ujjain, (M P) (India)

2015-07-31

A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantly raised and the threshold pump field for the onset of SBS process is lowered.

Stabilized High Power Laser for Advanced Gravitational Wave Detectors

International Nuclear Information System (INIS)

Willke, B; Danzmann, K; Fallnich, C; Frede, M; Heurs, M; King, P; Kracht, D; Kwee, P; Savage, R; Seifert, F; Wilhelm, R

2006-01-01

Second generation gravitational wave detectors require high power lasers with several 100W of output power and with very low temporal and spatial fluctuations. In this paper we discuss possible setups to achieve high laser power and describe a 200W prestabilized laser system (PSL). The PSL noise requirements for advanced gravitational wave detectors will be discussed in general and the stabilization scheme proposed for the Advanced LIGO PSL will be described. Special emphasis will be given to the most demanding power stabilization requirements and new results (RIN ≤ 4x10 -9 /√Hz) will be presented

High brightness diode lasers controlled by volume Bragg gratings

Science.gov (United States)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

High-power random distributed feedback fiber laser: From science to application

Energy Technology Data Exchange (ETDEWEB)

Du, Xueyuan [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Naval Academy of Armament, Beijing 100161 (China); Zhang, Hanwei; Xiao, Hu; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu; Liu, Zejin [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2016-10-15

A fiber laser based on random distributed feedback has attracted increasing attention in recent years, as it has become an important photonic device and has found wide applications in fiber communications or sensing. In this article, recent advances in high-power random distributed feedback fiber laser are reviewed, including the theoretical analyses, experimental approaches, discussion on the practical applications and outlook. It is found that a random distributed feedback fiber laser can not only act as an information photonics device, but also has the feasibility for high-efficiency/high-power generation, which makes it competitive with conventional high-power laser sources. In addition, high-power random distributed feedback fiber laser has been successfully applied for midinfrared lasing, frequency doubling to the visible and high-quality imaging. It is believed that the high-power random distributed feedback fiber laser could become a promising light source with simple and economic configurations. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High mobility emissive organic semiconductor

Science.gov (United States)

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Final Report: High Power Semiconductor Laser Sources,

Science.gov (United States)

1989-01-01

Mittelstein, Yasuhiko Arakawa, ) Anders Larssonb) and Amnon Yariv California Institute of Technology, Pasadena, California 91 125~412 (Received 7 July...Electronics and Commu- nication Engineers of Japan. He is a member of the Institute of Electronics Yasuhiko Arakawa S󈨑-M󈨔) was born in Ai- and...Gain, Modulation Response, and Spectral Linewidth in AlGaAs Quantum Well Lasers YASUHIKO ARAKAWA. MEMBER, IEEE. AND AMNON YARIV. FELLOW. IEEE Abstract

Towards filament free semiconductor lasers

DEFF Research Database (Denmark)

McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

2000-01-01

We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

High power excimer laser

International Nuclear Information System (INIS)

Oesterlin, P.; Muckenheim, W.; Basting, D.

1988-01-01

Excimer lasers emitting more than 200 W output power are not commercially available. A significant increase requires new technological efforts with respect to both the gas circulation and the discharge system. The authors report how a research project has yielded a laser which emits 0.5 kW at 308 nm when being UV preionized and operated at a repetition rate of 300 Hz. The laser, which is capable of operating at 500 Hz, can be equipped with an x-ray preionization module. After completing this project 1 kW output power will be available

Stretchers and compressors for ultra-high power laser systems

Energy Technology Data Exchange (ETDEWEB)

Yakovlev, I V [Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)

2014-05-30

This review is concerned with pulse stretchers and compressors as key components of ultra-high power laser facilities that take advantage of chirped-pulse amplification. The potentialities, characteristics, configurations and methods for the matching and alignment of these devices are examined, with particular attention to the history of the optics of ultra-short, ultra-intense pulses before and after 1985, when the chirped-pulse amplification method was proposed, which drastically changed the view of the feasibility of creating ultra-high power laser sources. The review is intended primarily for young scientists and experts who begin to address the amplification and compression of chirped pulses, experts in laser optics and all who are interested in scientific achievements in the field of ultra-high power laser systems. (review)

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

High-power VCSELs for smart munitions

Science.gov (United States)

Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

2006-08-01

The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

Monolithic integration of microfluidic channels and semiconductor lasers

Science.gov (United States)

Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

2006-08-01

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

Characterization of High-power Quasi-cw Laser Diode Arrays

Science.gov (United States)

Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

2005-01-01

NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

High-power single-mode cw dye ring laser

Energy Technology Data Exchange (ETDEWEB)

Schroeder, H W; Stein, L; Froelich, D; Fugger, B; Welling, H [Technische Univ. Hannover (Germany, F.R.). Inst. fuer Angewandte Physik

1977-12-01

Due to spatial hole burning, standing-wave dye lasers require a large amount of selectivity inside the cavity for single-mode operation. The output power of these lasers is limited by losses caused by the frequency selecting elements. In a travelling-wave laser, on the other hand, spatial hole burning does not exist, thereby eliminating the need for high selectivity. A travelling-wave cw dye laser was realized by unidirectional operation of a ring laser, yielding single mode output powers of 1.2 W at 595 nm and of 55 mW in the UV-region with intracavity frequency doubling.

Hybrid organic semiconductor lasers for bio-molecular sensing.

Science.gov (United States)

Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

2014-01-01

Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

Recent progress in high-power slab lasers in Japan

International Nuclear Information System (INIS)

Fujii, Y.

1988-01-01

Recently, many solid-state lasers have been widely employed in Japanese industries, especially in the electronics industries for precise and reliable processing. To expand the use of solid-state lasers and to achieve higher processing speed, the authors are developing slab lasers of high power, high repetition rate, and high beam quality. Metal processing systems with optical fibers for large and complex 3-D work, multiwork station systems linked to only one laser with optical fibers, and compact x-ray sources for lithography are promising areas for such lasers. Surnitomo Metal Mining is growing Nd:GGG and Nd:YAG crystals 60 mm in diameter and 200 mm long. From 2 at.% Nd-doped GGG crystals without central core regions. The authors obtained two slab materials with dimensions of 35 X 9 X 192 and 55 X 15 X 213 mm/sup 3/. By using the smaller slab, they constructed a slab laser and obtained 370-W laser output power at 24-kW lamp input power and 10-pps repetition rate. Now they are constructing a 1-kW slab laser using the other larger size slab

Photochemistry Aspects of the Laser Pyrolysis Addressing the Preparation of Oxide Semiconductor Photocatalysts

Directory of Open Access Journals (Sweden)

R. Alexandrescu

2008-01-01

Full Text Available The laser pyrolysis is a powerful and a versatile tool for the gas-phase synthesis of nanoparticles. In this paper, some fundamental and applicative characteristics of this technique are outlined and recent results obtained in the preparation of gamma iron oxide (γ-Fe2O3 and titania (TiO2 semiconductor nanostructures are illustrated. Nanosized iron oxide particles (4 to 9 nm diameter values have been directly synthesized by the laser-induced pyrolysis of a mixture containing iron pentacarbonyl/air (as oxidizer/ethylene (as sensitizer. Temperature-dependent Mossbauer spectroscopy shows that mainly maghemite is present in the sample obtained at higher laser power. The use of selected Fe2O3 samples for the preparation of water-dispersed magnetic nanofluids is also discussed. TiO2 nanoparticles comprising a mixture of anatase and rutile phases were synthesized via the laser pyrolysis of TiCl4- (vapors based gas-phase mixtures. High precursor concentration of the oxidizer was found to favor the prevalent anatase phase (about 90% in the titania nanopowders.

A plasma microlens for ultrashort high power lasers

Science.gov (United States)

Katzir, Yiftach; Eisenmann, Shmuel; Ferber, Yair; Zigler, Arie; Hubbard, Richard F.

2009-07-01

We present a technique for generation of miniature plasma lens system that can be used for focusing and collimating a high intensity femtosecond laser pulse. The plasma lens was created by a nanosecond laser, which ablated a capillary entrance. The spatial configuration of the ablated plasma focused a high intensity femtosecond laser pulse. This configuration offers versatility in the plasma lens small f-number for extremely tight focusing of high power lasers with no damage threshold restrictions of regular optical components.

A plasma microlens for ultrashort high power lasers

International Nuclear Information System (INIS)

Katzir, Yiftach; Eisenmann, Shmuel; Ferber, Yair; Zigler, Arie; Hubbard, Richard F.

2009-01-01

We present a technique for generation of miniature plasma lens system that can be used for focusing and collimating a high intensity femtosecond laser pulse. The plasma lens was created by a nanosecond laser, which ablated a capillary entrance. The spatial configuration of the ablated plasma focused a high intensity femtosecond laser pulse. This configuration offers versatility in the plasma lens small f-number for extremely tight focusing of high power lasers with no damage threshold restrictions of regular optical components.

Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

Science.gov (United States)

Nadimi, Mohammad; Waritanant, Tanant; Major, Arkady

2018-01-01

We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

High Energy Density Sciences with High Power Lasers at SACLA

Science.gov (United States)

Kodama, Ryosuke

2013-10-01

One of the interesting topics on high energy density sciences with high power lasers is creation of extremely high pressures in material. The pressures of more than 0.1 TPa are the energy density corresponding to the chemical bonding energy, resulting in expectation of dramatic changes in the chemical reactions. At pressures of more than TPa, most of material would be melted on the shock Hugoniot curve. However, if the temperature is less than 1eV or lower than a melting point at pressures of more than TPa, novel solid states of matter must be created through a pressured phase transition. One of the interesting materials must be carbon. At pressures of more than TPa, the diamond structure changes to BC and cubic at more than 3TPa. To create such novel states of matter, several kinds of isentropic-like compression techniques are being developed with high power lasers. To explore the ``Tera-Pascal Science,'' now we have a new tool which is an x-ray free electron laser as well as high power lasers. The XFEL will clear the details of the HED states and also efficiently create hot dense matter. We have started a new project on high energy density sciences using an XFEL (SACLA) in Japan, which is a HERMES (High Energy density Revolution of Matter in Extreme States) project.

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

Science.gov (United States)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Industrial applications of high-average power high-peak power nanosecond pulse duration Nd:YAG lasers

Science.gov (United States)

Harrison, Paul M.; Ellwi, Samir

2009-02-01

Within the vast range of laser materials processing applications, every type of successful commercial laser has been driven by a major industrial process. For high average power, high peak power, nanosecond pulse duration Nd:YAG DPSS lasers, the enabling process is high speed surface engineering. This includes applications such as thin film patterning and selective coating removal in markets such as the flat panel displays (FPD), solar and automotive industries. Applications such as these tend to require working spots that have uniform intensity distribution using specific shapes and dimensions, so a range of innovative beam delivery systems have been developed that convert the gaussian beam shape produced by the laser into a range of rectangular and/or shaped spots, as required by demands of each project. In this paper the authors will discuss the key parameters of this type of laser and examine why they are important for high speed surface engineering projects, and how they affect the underlying laser-material interaction and the removal mechanism. Several case studies will be considered in the FPD and solar markets, exploring the close link between the application, the key laser characteristics and the beam delivery system that link these together.

Efficiency of soft tissue incision with a novel 445-nm semiconductor laser.

Science.gov (United States)

Braun, Andreas; Kettner, Moritz; Berthold, Michael; Wenzler, Johannes-Simon; Heymann, Paul Günther Baptist; Frankenberger, Roland

2018-01-01

Using a 445-nm semiconductor laser for tissue incision, an effective cut is expected due to the special absorption properties of blue laser light in soft tissues. The aim of the present study was the histological evaluation of tissue samples after incision with a 445-nm diode laser. Forty soft tissue specimens were obtained from pork oral mucosa and mounted on a motorized linear translation stage. The handpiece of a high-frequency surgery device, a 970-nm semiconductor laser, and a 445-nm semiconductor laser were connected to the slide, allowing a constant linear movement (2 mm/s) and the same distance of the working tip to the soft tissue's surface. Four incisions were made each: (I) 970-nm laser with conditioned fiber tip, contact mode at 3-W cw; (II-III): 445-nm laser with non-conditioned fiber tip, contact mode at 2-W cw, and non-contact mode (1 mm) at 2 W; and (IV): high-frequency surgery device with straight working tip, 90° angulation, contact mode at 50 W. Histological analysis was performed after H&E staining of the embedded specimens at 35-fold magnification. The comparison of the incision depths showed a significant difference depending on the laser wavelength and the selected laser parameters. The highest incision depth was achieved with the 445-nm laser contact mode (median depth 0.61 mm, min 0.26, max 1.17, interquartile range 0.58) (p laser, a higher cutting efficiency can be expected when compared with a 970-nm diode laser and high-frequency surgery. Even the 445-nm laser application in non-contact mode shows clinically acceptable incision depths without signs of extensive soft tissue denaturation.

High-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser

International Nuclear Information System (INIS)

Zhuang, W Z; Chang, M T; Su, K W; Huang, K F; Chen, Y F

2013-01-01

We report on high-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser. A semiconductor saturable absorber mirror is developed to achieve synchronously mode-locked operation at two spectral bands centered at 1031.67 and 1049.42 nm with a pulse duration of 1.54 ps and a pulse repetition rate of 80.3 GHz. With a diamond heat spreader to improve the heat removal efficiency, the average output power can be up to 1.1 W at an absorbed pump power of 5.18 W. The autocorrelation traces reveal that the mode-locked pulse is modulated with a beat frequency of 4.92 THz and displays a modulation depth to be greater than 80%. (paper)

Neutron and gamma irradiation effects on power semiconductor switches

International Nuclear Information System (INIS)

Schwarze, G.E.; Frasca, A.J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN bipolar junction transistors (BJTs), and metal-oxide-semiconductor field effect transistors (MOSFETs)

Radiation effects in semiconductor laser diode arrays

International Nuclear Information System (INIS)

Carson, R.F.

1988-01-01

The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

Science.gov (United States)

Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

2018-03-01

In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

Tunable high-power narrow-linewidth green external-cavity GaN diode laser

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system.......A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system....

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

Optical design of high power excimer laser system

International Nuclear Information System (INIS)

Zhang Yongsheng; Zhao Jun; Ma Lianying; Yi Aiping; Liu Jingru

2011-01-01

Image relay and angular multiplexing,which should be considered together in the design of high power excimer laser system, is reviewed. It's important to select proper illumination setup and laser beam shaping techniques. Given the complex and special angular multiplexing scheme in high power excimer laser systems, some detailed conceptual layout schemes are given in the paper. After a brief description of lens array and reflective telescope objective, which combine the incoming beams to a common focus, a new schematic layout which uses the final targeting optics and one optical delay line array, to realize multiplexing and de-multiplexing simultaneously is first proposed in the paper. (authors)

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao

2017-02-07

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

Science.gov (United States)

Frez, Clifford F.; Briggs, Ryan M.; Forouhar, Siamak; Borgentun, Carl E.; Gupta, James

2013-01-01

InGaAsSb multi-quantum well structures. The device fabrication utilizes etched index-coupled gratings in the top AlGaAsSb cladding of the laser chip along the ridge waveguide, whereas commercial lasers that emit close to this wavelength include loss-coupled metal gratings that limit the output power of the laser. Semiconductor-laser-based spectrometers can be used to replace gas sensors currently used in industry and government. With the availability of high-power laser sources at mid-infrared wavelengths, sensors can target strong fundamental gas absorption lines to maximize instrument sensitivity.

High power YAG laser cutting; Koshutsuryoku YAG laser ni yoru setsudan gijutsu

Energy Technology Data Exchange (ETDEWEB)

Owaki, K. [Ishikawajima-Harima Heavy Industries Co. Ltd., Tokyo (Japan)

1998-08-01

This paper describes features of high power YAG cutting. The optical fiber transmission YAG laser machining system has some advantages in which optical path length compensation unit is not required and measures for low power loss and dust are not required, when compared with the CO2 laser system. Its application to the cutting of stainless steel plates has attracted attention. Cutting tests of SUS304 were conducted using high power YAG laser. Cutting of SUS304 plate with a thickness of 40 mm could be successfully done at the power of 3.5 kW. Cutting tests of SUS304 pipes with a thickness of 8 mm in water under the depth of 20 m were also conducted using air as assist gas at the power of 2.5 kW. Excellent results were obtained without scale deposition. For the tests by the composite beam using 3 kW and 4 kW systems, SUS304 plate with a thickness of 50 mm could be cut at the cutting speed of 0.1 m/min. Laser cutting of pipes from the internal surface was conducted using a newly developed small machining head which can rotate in the peripheral direction. Excellent quality for welding was confirmed. Cutting speed and plate thickness were improved by combining water jet cutter and YAG laser unit. 6 refs., 10 figs.

High-power green diode laser systems for biomedical applications

DEFF Research Database (Denmark)

Müller, André

propagation parameters and therefore efficiently increases the brightness of compact and cost-effective diode laser systems. The condition of overlapping beams is an ideal scenario for subsequent frequency conversion. Based on sum-frequency generation of two beam combined diode lasers a 3.2 fold increase...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential....... Implementing the developed concept of frequency converted, beam combined diode laser systems will help to overcome the high pump thresholds for ultrabroad bandwidth titanium sapphire lasers, leading towards diode based high-resolution optical coherence tomography with enhanced image quality. In their entirety...

New horizons for high-power lasers: applications in civil engineering

Science.gov (United States)

Wignarajah, Sivakumaran

2000-01-01

Although material processing with high power lasers has found widespread use in a variety of industries such as the automotive industry, electrical and electronics industries, aerospace industry etc., civil engineering construction is one field that has lagged behind in the use of lasers for material processing. This is in spite of the fact that a large variety of materials including ceramics, metals and plastics are used in very large quantities for civil engineering construction. The main reasons for the delay in the adopting of laser for processing construction material seem to be the high costs involved and the lack of sufficient power for processing heavy and thick materials. However, with the advent of more compact lasers with higher powers, higher efficiencies and lower photon costs, greater interest has been shown in recent years in the possible uses of high power lasers for material processing in the construction industry. The author traces some of the past work carried out both in Japan and abroad on the use of lasers in civil engineering, specially with respect to the processing of inorganic material such as concrete, natural stones, tiles and rocks. Recent developments regarding laser decontamination and laser assisted rock excavation are also introduced.

Mathematical modeling of thermal runaway in semiconductor laser operation

NARCIS (Netherlands)

Smith, W.R.

2000-01-01

A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear

Laser materials processing with diode lasers

OpenAIRE

Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

1996-01-01

Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

Energy Technology Data Exchange (ETDEWEB)

Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

2014-07-28

Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

Science.gov (United States)

Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

2018-01-01

The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

High Power Diode Lasers with External Feedback: Overview and Prospects

DEFF Research Database (Denmark)

Chi, Mingjun; Petersen, Paul Michael

2012-01-01

In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...... with a good beam quality. Tapered diode laser systems with external-cavity feedback around 800 and 1060 nm can deliver more than 2 W output power with diffraction-limited beam quality and can be operated in single-longitudinal mode. These high-brightness, narrow linewidth, and tunable external-cavity diode...... lasers emerge as the next generation of compact lasers that have the potential of replacing conventional high power laser systems in many existing applications....

QED studies using high-power lasers

International Nuclear Information System (INIS)

Mattias Marklund

2010-01-01

Complete text of publication follows. The event of extreme lasers, which intensities above 10 22 W/cm 2 will be reached on a routine basis, will give us opportunities to probe new aspects of quantum electrodynamics. In particular, the non-trivial properties of the quantum vacuum can be investigated as we reach previously unattainable laser intensities. Effects such as vacuum birefringence and pair production in strong fields could thus be probed. The prospects of obtaining new insights regarding the non-perturbative structure of quantum field theories shows that the next generation laser facilities can be important tool for fundamental physical studies. Here we aim at giving a brief overview of such aspects of high-power laser physics.

The Application of Cryogenic Laser Physics to the Development of High Average Power Ultra-Short Pulse Lasers

Directory of Open Access Journals (Sweden)

David C. Brown

2016-01-01

Full Text Available Ultrafast laser physics continues to advance at a rapid pace, driven primarily by the development of more powerful and sophisticated diode-pumping sources, the development of new laser materials, and new laser and amplification approaches such as optical parametric chirped-pulse amplification. The rapid development of high average power cryogenic laser sources seems likely to play a crucial role in realizing the long-sought goal of powerful ultrafast sources that offer concomitant high peak and average powers. In this paper, we review the optical, thermal, thermo-optic and laser parameters important to cryogenic laser technology, recently achieved laser and laser materials progress, the progression of cryogenic laser technology, discuss the importance of cryogenic laser technology in ultrafast laser science, and what advances are likely to be achieved in the near-future.

Trends in high power laser applications in civil engineering

Science.gov (United States)

Wignarajah, Sivakumaran; Sugimoto, Kenji; Nagai, Kaori

2005-03-01

This paper reviews the research and development efforts made on the use of lasers for material processing in the civil engineering industry. Initial investigations regarding the possibility of using lasers in civil engineering were made in the 1960s and '70s, the target being rock excavation. At that time however, the laser powers available were too small for any practical application utilization. In the 1980's, the technology of laser surface cleaning of historically important structures was developed in Europe. In the early 1990s, techniques of laser surface modification, including glazing and coloring of concrete, roughening of granite stones, carbonization of wood were pursued, mainly in Japan. In the latter part of the decade, techniques of laser decontamination of concrete surfaces in nuclear facilities were developed in many countries, and field tests were caried out in Japan. The rapid advances in development of diode lasers and YAG lasers with high power outputs and efficiencies since the late 1990's have led to a revival of worldwide interest in the use of lasers for material processing in civil engineering. The authors believe that, in the next 10 years or so, the advent of compact high power lasers is likely to lead to increased use of lasers of material processing in the field of civil engineering.

High power multiple wavelength diode laser stack for DPSSL application without temperature control

Science.gov (United States)

Hou, Dong; Yin, Xia; Wang, Jingwei; Chen, Shi; Zhan, Yun; Li, Xiaoning; Fan, Yingmin; Liu, Xingsheng

2018-02-01

High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.

Direct solar pumping of semiconductor lasers: A feasibility study

Science.gov (United States)

Anderson, Neal G.

1992-01-01

This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

Semiconductor Laser Tracking Frequency Distance Gauge

Science.gov (United States)

Phillips, James D.; Reasenberg, Robert D.

2009-01-01

Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

Laser applications for energy. Fifty years since advent of laser and next thirty years

International Nuclear Information System (INIS)

Nakai, Sadao

2011-01-01

The utilization of light has been changed since the advent of lasers about fifty years ago. Now in the twenty first century, laser science is being applied in every industry as the fundamental technology. In the recent years, remarkable progresses have been made in the semiconductor lasers of high power and wide wavelength region. The amazing developments of ceramics laser materials like YAG and nonlinear optics materials of organic crystals have been achieved as well as the big progress in the fiber lasers. It is also to be pointed out that very high power ultra short laser pulses have become available. In the field of power photonics, which is based on the power semiconductor lasers, fiber lasers and new laser materials, various industrial applications are expected to be constructed further in civil engineering, manufacturing technology, agricultural and biological applications, medical utilization and space sciences. It is expected, by the development of ultra short pulse and ultra high mean power lasers, that particle accelerations, ultra high density sciences, nuclear fusion neutron sources and laser fusion power reactors are to be advanced drastically. Recent development and future prospects of high power lasers are illustrated. Lasers are now regarded as one of the key technologies in line with the national policy toward the creation of innovative industries. Realization of the laser fusion reactor is the most challenging target in the coming thirty years. (S. Funahashi)

Study on guided waves in semiconductor lasers

International Nuclear Information System (INIS)

Pudensi, M.A.A.

1980-01-01

In This work we studied the guided waves in semiconductor lasers. In the first part we carried on the experimental measurements on lasers with stripe nonorthogonal to the mirrors. In the second part we developed a matrix method for the study of propagation and reflection of guided waves in lasers. (author) [pt

Development of semiconductor laser based Doppler lidars for wind-sensing applications

DEFF Research Database (Denmark)

Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

2015-01-01

We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...

Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination

International Nuclear Information System (INIS)

Rodrigo, Peter John; Lim, May; Saloma, Caesar

2001-01-01

An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (λ=830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, λ/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker

Space structures, power, and power conditioning; Proceedings of the Meeting, Los Angeles, CA, Jan. 11-13, 1988

International Nuclear Information System (INIS)

Askew, R.F.

1988-01-01

Various papers on space structures, power, and power conditioning are presented. Among the topics discussed are: heterogeneous gas core reaction for space nuclear power, pulsed gas core reactor for burst power, fundamental considerations of gas core reactor systems, oscillating thermionic conversion for high-density space power, thermoelectromagnetic pumps for space nuclear power systems, lightweight electrochemical converter for space power applications, ballistic acceleration by superheated hydrogen, laser-induced current switching in gaseous discharge, electron-beam-controlled semiconductor switches, laser-controlled semiconductor closing and opening switch. Also addressed are: semiconductor-metal eutectic composites for high-power switching, optical probes for the characterization of surface breakdown, 40 kV/20 kA pseudospark switch for laser applications, insulation direction for high-power space systems, state space simulation of spacecraft power systems, structural vibration of space power station systems, minimum-time control of large space structures, novel fusion reaction for space power and propulsion, repetition rate system evaluations, cryogenic silicon photoconductive switches for high-power lasers, multilevel diamondlike carbon capacitor structure, surface breakdown of prestressed insulators, C-Mo and C-Zr alloys for space power systems, magnetic insulation for the space environment

All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

DEFF Research Database (Denmark)

Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

2010-01-01

Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

2004-01-01

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

Science.gov (United States)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

High-average-power solid state lasers

International Nuclear Information System (INIS)

Summers, M.A.

1989-01-01

In 1987, a broad-based, aggressive R ampersand D program aimed at developing the technologies necessary to make possible the use of solid state lasers that are capable of delivering medium- to high-average power in new and demanding applications. Efforts were focused along the following major lines: development of laser and nonlinear optical materials, and of coatings for parasitic suppression and evanescent wave control; development of computational design tools; verification of computational models on thoroughly instrumented test beds; and applications of selected aspects of this technology to specific missions. In the laser materials areas, efforts were directed towards producing strong, low-loss laser glasses and large, high quality garnet crystals. The crystal program consisted of computational and experimental efforts aimed at understanding the physics, thermodynamics, and chemistry of large garnet crystal growth. The laser experimental efforts were directed at understanding thermally induced wave front aberrations in zig-zag slabs, understanding fluid mechanics, heat transfer, and optical interactions in gas-cooled slabs, and conducting critical test-bed experiments with various electro-optic switch geometries. 113 refs., 99 figs., 18 tabs

Wavelength dependency in high power laser cutting and welding

Science.gov (United States)

Havrilla, David; Ziermann, Stephan; Holzer, Marco

2012-03-01

Laser cutting and welding have been around for more than 30 years. Within those three decades there has never been a greater variety of high power laser types and wavelengths to choose from than there is today. There are many considerations when choosing the right laser for any given application - capital investment, cost of ownership, footprint, serviceability, along with a myriad of other commercial & economic considerations. However, one of the most fundamental questions that must be asked and answered is this - "what type of laser is best suited for the application?". Manufacturers and users alike are realizing what, in retrospect, may seem obvious - there is no such thing as a universal laser. In many cases there is one laser type and wavelength that clearly provides the highest quality application results. This paper will examine the application fields of high power, high brightness 10.6 & 1 micron laser welding & cutting and will provide guidelines for selecting the laser that is best suited for the application. Processing speed & edge quality serve as key criteria for cutting. Whereas speed, seam quality & spatter ejection provide the paradigm for welding.

High-Power ZBLAN Glass Fiber Lasers: Review and Prospect

Directory of Open Access Journals (Sweden)

Xiushan Zhu

2010-01-01

Full Text Available ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF, considered as the most stable heavy metal fluoride glass and the excellent host for rare-earth ions, has been extensively used for efficient and compact ultraviolet, visible, and infrared fiber lasers due to its low intrinsic loss, wide transparency window, and small phonon energy. In this paper, the historical progress and the properties of fluoride glasses and the fabrication of ZBLAN fibers are briefly described. Advances of infrared, upconversion, and supercontinuum ZBLAN fiber lasers are addressed in detail. Finally, constraints on the power scaling of ZBLAN fiber lasers are analyzed and discussed. ZBLAN fiber lasers are showing promise of generating high-power emissions covering from ultraviolet to mid-infrared considering the recent advances in newly designed optical fibers, beam-shaped high-power pump diodes, beam combining techniques, and heat-dissipating technology.

Ultrafast dynamics and laser action of organic semiconductors

CERN Document Server

Vardeny, Zeev Valy

2009-01-01

Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

Laser power supply

International Nuclear Information System (INIS)

Bernstein, D.

1975-01-01

The laser power supply includes a regulator which has a high voltage control loop based on a linear approximation of a laser tube negative resistance characteristic. The regulator has independent control loops for laser current and power supply high voltage

High-average-power diode-pumped Yb: YAG lasers

International Nuclear Information System (INIS)

Avizonis, P V; Beach, R; Bibeau, C M; Emanuel, M A; Harris, D G; Honea, E C; Monroe, R S; Payne, S A; Skidmore, J A; Sutton, S B

1999-01-01

A scaleable diode end-pumping technology for high-average-power slab and rod lasers has been under development for the past several years at Lawrence Livermore National Laboratory (LLNL). This technology has particular application to high average power Yb:YAG lasers that utilize a rod configured gain element. Previously, this rod configured approach has achieved average output powers in a single 5 cm long by 2 mm diameter Yb:YAG rod of 430 W cw and 280 W q-switched. High beam quality (M(sup 2)= 2.4) q-switched operation has also been demonstrated at over 180 W of average output power. More recently, using a dual rod configuration consisting of two, 5 cm long by 2 mm diameter laser rods with birefringence compensation, we have achieved 1080 W of cw output with an M(sup 2) value of 13.5 at an optical-to-optical conversion efficiency of 27.5%. With the same dual rod laser operated in a q-switched mode, we have also demonstrated 532 W of average power with an M(sup 2) and lt; 2.5 at 17% optical-to-optical conversion efficiency. These q-switched results were obtained at a 10 kHz repetition rate and resulted in 77 nsec pulse durations. These improved levels of operational performance have been achieved as a result of technology advancements made in several areas that will be covered in this manuscript. These enhancements to our architecture include: (1) Hollow lens ducts that enable the use of advanced cavity architectures permitting birefringence compensation and the ability to run in large aperture-filling near-diffraction-limited modes. (2) Compound laser rods with flanged-nonabsorbing-endcaps fabricated by diffusion bonding. (3) Techniques for suppressing amplified spontaneous emission (ASE) and parasitics in the polished barrel rods

Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

CERN Document Server

Yamada, Minoru

2014-01-01

This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

High power diode laser remelting of metals

International Nuclear Information System (INIS)

Chmelickova, H; Tomastik, J; Ctvrtlik, R; Supik, J; Nemecek, S; Misek, M

2014-01-01

This article is focused on the laser surface remelting of the steel samples with predefined overlapping of the laser spots. The goal of our experimental work was to evaluate microstructure and hardness both in overlapped zone and single pass ones for three kinds of ferrous metals with different content of carbon, cast iron, non-alloy structural steel and tool steel. High power fibre coupled diode laser Laserline LDF 3600-100 was used with robotic guided processing head equipped by the laser beam homogenizer that creates rectangular beam shape with uniform intensity distribution. Each sample was treated with identical process parameters - laser power, beam diameter, focus position, speed of motion and 40% spot overlap. Dimensions and structures of the remelted zone, zone of the partial melting, heat affected zone and base material were detected and measured by means of laser scanning and optical microscopes. Hardness progress in the vertical axis of the overlapped zone from remelted surface layer to base material was measured and compared with the hardness of the single spots. The most hardness growth was found for cast iron, the least for structural steel. Experiment results will be used to processing parameters optimization for each tested material separately.

High power semiconductor switching in the nanosecond regime

International Nuclear Information System (INIS)

Zucker, O.S.; Long, J.R.; Smith, V.L.; Page, D.J.; Roberts, J.S.

1975-12-01

Light activated multilayered silicon semiconductor devices have been used to switch at megawatt power levels with nanosecond turnon time. Current rate of rise of 700 kA/μs at 10 kA, with 1 kV across the load have been achieved. Recovery time of 1 millisec has been obtained. Applicability to fusion research needs is discussed

Application of laser spot cutting on spring contact probe for semiconductor package inspection

Science.gov (United States)

Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan

2017-12-01

A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

Low-frequency fluctuation in multimode semiconductor laser subject to optical feedback

Institute of Scientific and Technical Information of China (English)

Xu Zhang; Huiying Ye; Zhaoxin Song

2008-01-01

Dynamics of a semiconductor laser subject to moderate optical feedback operating in the low-frequency fluctuation regime is numerically investigated.Multimode Lang-Kobayashi(LK)equations show that the low-frequency intensity dropout including the total intensity and sub-modes intensity is accompanied by sudden dropout simultaneously,which is in good agreement with experimental observation.The power fluctuation is quite annoying in practical applications,therefore it becomes important to study the mechanism of power fluctuation.It is also shown that many factors,such as spontaneous emission noise and feedback parameter,may influence power fluctuation larger than previously expected.

Survey on modern pulsed high power lasers

International Nuclear Information System (INIS)

Witte, K.J.

1985-01-01

The requirements to be met by lasers for particle acceleration are partially similar to those already known for fusion lasers. The power level wanted in both caes is up to 100 TW or even more. The pulse durations favourable for laser accelerators are in the range from 1 ps to 1000 ps whereas fusion lasers require several ns. The energy range for laser accelerators is thus correspondingly smaller than that for fusion lasers: 1-100 kJ versus several 100 kJ. The design criteria of lasers meeting the requirements are discussed in the following. The CO 2 , iodine, Nd:glass and excimer lasers are treated in detail. The high repetition rate aspect will not be particularly addressed since for the present generation of lasers the wanted rates of far above 1 Hz are completely out of scope. Moreover, for the demonstration of principle these rates are not needed. (orig./HSI)

Nuclear based diagnostics in high-power laser applications

Energy Technology Data Exchange (ETDEWEB)

Guenther, Marc; Sonnabend, Kerstin; Harres, Knut; Otten, Anke; Roth, Markus [TU Darmstadt, Institut fuer Kernphysik, Darmstadt (Germany); Vogt, Karsten; Bagnoud, Vincent [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany)

2010-07-01

High-power lasers allow focused intensities of >10{sup 18} W/cm{sup 2}. During the laser-solid interaction, an intense relativistic electron current is injected from the plasma into the target. One challenge is to characterize the electron dynamic close to the interaction region. Moreover, next generation high-power laser proton acceleration leads to high proton fluxes, which require novel, nuclear diagnostic techniques. We present an activation-based nuclear pyrometry for the investigation of electrons generated in relativistic laser-solid interactions. We use novel activation targets consisting of several isotopes with different photo-neutron disintegration thresholds. The electrons are decelerated inside the target via bremsstrahlung processes. The high-energy bremsstrahlung induces photo-nuclear reactions. In this energy range no disturbing low energy effects are important. Via the pyrometry the Reconstruction of the absolute yield, spectral and spatial distribution of the electrons is possible. For the characterization of proton beams we present a nuclear activation imaging spectroscopy (NAIS). The diagnostic is based on proton-neutron disintegration reactions of copper stacked in consecutive layers. An autoradiography of copper layers leads to spectrally and spatially reconstruction of the beam profile.

Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

Science.gov (United States)

Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

2011-04-25

Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

Neutron and gamma irradiation effects on power semiconductor switches

Science.gov (United States)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Coherent beam combining architectures for high power tapered laser arrays

Science.gov (United States)

Schimmel, G.; Janicot, S.; Hanna, M.; Decker, J.; Crump, P.; Erbert, G.; Witte, U.; Traub, M.; Georges, P.; Lucas-Leclin, G.

2017-02-01

Coherent beam combining (CBC) aims at increasing the spatial brightness of lasers. It consists in maintaining a constant phase relationship between different emitters, in order to combine them constructively in one single beam. We have investigated the CBC of an array of five individually-addressable high-power tapered laser diodes at λ = 976 nm, in two architectures: the first one utilizes the self-organization of the lasers in an interferometric extended-cavity, which ensures their mutual coherence; the second one relies on the injection of the emitters by a single-frequency laser diode. In both cases, the coherent combining of the phase-locked beams is ensured on the front side of the array by a transmission diffractive grating with 98% efficiency. The passive phase-locking of the laser bar is obtained up to 5 A (per emitter). An optimization algorithm is implemented to find the proper currents in the five ridge sections that ensured the maximum combined power on the front side. Under these conditions we achieve a maximum combined power of 7.5 W. In the active MOPA configuration, we can increase the currents in the tapered sections up to 6 A and get a combined power of 11.5 W, corresponding to a combining efficiency of 76%. It is limited by the beam quality of the tapered emitters and by fast phase fluctuations between emitters. Still, these results confirm the potential of CBC approaches with tapered lasers to provide a high-power and high-brightness beam, and compare with the current state-of-the-art with laser diodes.

Low-power-laser therapy used in tendon damage

Science.gov (United States)

Strupinska, Ewa

1996-03-01

The following paper covers evaluation of low-power laser therapy results in chronic Achilles tendon damage and external Epicondylalia (tennis elbow). Fifty patients with Achilles damage (18 women and 32 men, age average 30, 24 plus or minus 10, 39 years) and fifty patients having external Epicondyalgiae (31 women and 19 men, age average 44, 36 plus or minus 10, 88 years) have been examined. The patients were irradiated by semiconductor infrared laser wavelength 904 nm separately or together with helium-neon laser wavelength 632.8 nm. The results of therapy have been based on the patient's interviews and examinations of patients as well as on the Laitinen pain questionnaire. The results prove analgesic effects in usage of low- power laser radiation therapy can be obtained.

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad

2016-01-01

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III

Return-map for semiconductor lasers with optical feedback

DEFF Research Database (Denmark)

Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.

1999-01-01

It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation of the phe......It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...

Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

International Nuclear Information System (INIS)

Slipchenko, S. O.; Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

2009-01-01

Asymmetric Al 0.3 Ga 0.7 As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the transverse broadened waveguide. It is experimentally established that this shift brings about an increase in internal optical losses and a decrease in the internal quantum efficiency of stimulated emission. It is shown experimentally that the shift of the active region to the n-type cladding layer governs the sublinear form of the power-current characteristic for semiconductor lasers; in the case of a shift of the active region towards the p-type cladding layer, the laser diodes demonstrated a linear dependence of optical power on the pump current in the entire range of pump currents.

High power CO2 lasers and their applications in nuclear industry

International Nuclear Information System (INIS)

Nath, A.K.

2002-01-01

Carbon dioxide laser is one of the most popular lasers in industry for material processing applications. It has very high power capability and high efficiency, can be operated in continuous wave (CW), modulated and pulsed modes, and has relatively low cost. Due to these characteristics high power CO 2 lasers are being used worldwide in different industries for a wide variety of materials processing operations. In nuclear industry, CO 2 laser has made its way in many applications. Some of the tasks performed by multikilowatt CO 2 laser are cutting operations necessary to remove unprocessible hardware from reactor fuel assemblies, sealing/fixing/removing radioactive contaminations onto/from concrete surfaces and surface modification of engineering components for improved surface mechanical and metallurgical characteristics. We have developed various models of CW CO 2 lasers of power up to 12 kW and a high repetitive rate TEA (Transversely Excited Atmospheric pressure) CO 2 laser of 500 W average power operating at 500 Hz repetition rates. We have carried many materials processing applications of direct relevance to DAE. Recent work includes laser welding of end plug PFBR fuel tubes, martensitic stainless steel and titanium alloy, surface cladding of turbine blades made of Ni-super alloy with stellite 694, fabrication on graded material of stainless steel and stellite, and laser scabbling, drilling and cutting of concrete which have potential application in decontamination and decommissioning of nuclear facilities. A brief overview of these indigenous developments will be presented. (author)

High Power laser power conditioning system new discharge circuit research

CERN Document Server

Li Yi; Peng Han Sheng; Zhou Pei Zhang; Zheng Wan Guo; Guo Lang Fu; Chen Li Hua; Chen De Hui; Lai Gui You; Luan Yong Ping

2002-01-01

The new discharge circuit of power conditioning system for high power laser is studied. The theoretical model of the main discharge circuit is established. The pre-ionization circuit is studied in experiment. In addition, the explosion energy of the new large xenon lamp is successfully measured. The conclusion has been applied to 4 x 2 amplifier system

Nanonewton thrust measurement of photon pressure propulsion using semiconductor laser

Science.gov (United States)

Iwami, K.; Akazawa, Taku; Ohtsuka, Tomohiro; Nishida, Hiroyuki; Umeda, Norihiro

2011-09-01

To evaluate the thrust produced by photon pressure emitted from a 100 W class continuous-wave semiconductor laser, a torsion-balance precise thrust stand is designed and tested. Photon emission propulsion using semiconductor light sources attract interests as a possible candidate for deep-space propellant-less propulsion and attitude control system. However, the thrust produced by photon emission as large as several ten nanonewtons requires precise thrust stand. A resonant method is adopted to enhance the sensitivity of the biflier torsional-spring thrust stand. The torsional spring constant and the resonant of the stand is 1.245 × 10-3 Nm/rad and 0.118 Hz, respectively. The experimental results showed good agreement with the theoretical estimation. The thrust efficiency for photon propulsion was also defined. A maximum thrust of 499 nN was produced by the laser with 208 W input power (75 W of optical output) corresponding to a thrust efficiency of 36.7%. The minimum detectable thrust of the stand was estimated to be 2.62 nN under oscillation at a frequency close to resonance.

Latest development of high-power fiber lasers in SPI

Science.gov (United States)

Norman, Stephen; Zervas, Mikhail N.; Appleyard, Andrew; Durkin, Michael K.; Horley, Ray; Varnham, Malcolm P.; Nilsson, Johan; Jeong, Yoonchan

2004-06-01

High Power Fiber Lasers (HPFLs) and High Power Fiber Amplifiers (HPFAs) promise a number of benefits in terms of their high optical efficiency, degree of integration, beam quality, reliability, spatial compactness and thermal management. These benefits are driving the rapid adoption of HPFLs in an increasingly wide range of applications and power levels ranging from a few Watts, in for example analytical applications, to high-power >1kW materials processing (machining and welding) applications. This paper describes SPI"s innovative technologies, HPFL products and their performance capabilities. The paper highlights key aspects of the design basis and provides an overview of the applications space in both the industrial and aerospace domains. Single-fiber CW lasers delivering 1kW output power at 1080nm have been demonstrated and are being commercialized for aerospace and industrial applications with wall-plug efficiencies in the range 20 to 25%, and with beam parameter products in the range 0.5 to 100 mm.mrad (corresponding to M2 = 1.5 to 300) tailored to application requirements. At power levels in the 1 - 200 W range, SPI"s proprietary cladding-pumping technology, GTWaveTM, has been employed to produce completely fiber-integrated systems using single-emitter broad-stripe multimode pump diodes. This modular construction enables an agile and flexible approach to the configuration of a range of fiber laser / amplifier systems for operation in the 1080nm and 1550nm wavelength ranges. Reliability modeling is applied to determine Systems martins such that performance specifications are robustly met throughout the designed product lifetime. An extensive Qualification and Reliability-proving programme is underway to qualify the technology building blocks that are utilized for the fiber laser cavity, pump modules, pump-driver systems and thermo-mechanical management. In addition to the CW products, pulsed fiber lasers with pulse energies exceeding 1mJ with peak pulse

Compact RGBY light sources with high luminance for laser display applications

Science.gov (United States)

Paschke, Katrin; Blume, Gunnar; Werner, Nils; Müller, André; Sumpf, Bernd; Pohl, Johannes; Feise, David; Ressel, Peter; Sahm, Alexander; Bege, Roland; Hofmann, Julian; Jedrzejczyk, Daniel; Tränkle, Günther

2018-02-01

Watt-class visible laser light with a high luminance can be created with high-power GaAs-based lasers either directly in the red spectral region or using single-pass second harmonic generation (SHG) for the colors in the blue-yellow spectral region. The concepts and results of red- and near infrared-emitting distributed Bragg reflector tapered lasers and master oscillator power amplifier systems as well as their application for SHG bench-top experiments and miniaturized modules are presented. Examples of these high-luminance light sources aiming at different applications such as flying spot display or holographic 3D cinema are discussed in more detail. The semiconductor material allows an easy adaptation of the wavelength allowing techniques such as six-primary color 3D projection or color space enhancement by adding a fourth yellow color.

Long distance high power optical laser fiber break detection and continuity monitoring systems and methods

Science.gov (United States)

Rinzler, Charles C.; Gray, William C.; Faircloth, Brian O.; Zediker, Mark S.

2016-02-23

A monitoring and detection system for use on high power laser systems, long distance high power laser systems and tools for performing high power laser operations. In particular, the monitoring and detection systems provide break detection and continuity protection for performing high power laser operations on, and in, remote and difficult to access locations.

Low Power Consumption Lasers for Miniature Optical Spectrometers for Trace Gas Analysis

Science.gov (United States)

Forouhar, S.; Frez, C.; Franz, K. J.; Ksendzov, A.; Qiu, Y.; Soibel, K. A.; Chen, J.; Hosoda, T.; Kipshidze, G.; Shterengas, L.;

Quantum confined laser devices optical gain and recombination in semiconductors

CERN Document Server

Blood, Peter

2015-01-01

The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

Energy Technology Data Exchange (ETDEWEB)

Kostin, Yu O; Lobintsov, A A; Shramenko, M V [OOO ' Opton' , Moscow (Russian Federation); Ladugin, M A; Marmalyuk, A A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Chamorovsky, A Yu [Superlum Ltd., Unit B3, Fota Point Enterprise Park, Carrigtwohill, Co Cork (Ireland); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

2015-08-31

We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

Optical double-locked semiconductor lasers

Science.gov (United States)

AlMulla, Mohammad

2018-06-01

Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

Single filament semiconductor laser

International Nuclear Information System (INIS)

Botez, D.

1980-01-01

A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

Controlling Stimulated Brillouin/Raman Scattering in High Power Fiber Lasers

Science.gov (United States)

2017-08-09

AFRL-RD-PS- AFRL-RD-PS- TR-2017-0043 TR-2017-0043 CONTROLLING STIMULATED BRILLOUIN/RAMAN SCATTERING IN HIGH POWER FIBER LASERS Cody Mart Ben...average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed...unlimited. 13. SUPPLEMENTARY NOTES 14. ABSTRACT This research addressed suppression of stimulated Brillouin/Raman scattering in high power fiber lasers

Semiconductor processing with excimer lasers

International Nuclear Information System (INIS)

Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

1983-01-01

The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

Integrated semiconductor twin-microdisk laser under mutually optical injection

Energy Technology Data Exchange (ETDEWEB)

Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen, E-mail: yzhuang@semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2015-05-11

We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

Recent results in mirror based high power laser cutting

DEFF Research Database (Denmark)

Olsen, Flemming Ove; Nielsen, Jakob Skov; Elvang, Mads

2004-01-01

In this paper, recent results in high power laser cutting, obtained in reseach and development projects are presented. Two types of mirror based focussing systems for laser cutting have been developed and applied in laser cutting studies on CO2-lasers up to 12 kW. In shipyard environment cutting...... speed increase relative to state-of-the-art cutting of over 100 % has been achieved....

Efficient high-power narrow-linewidth all-fibred linearly polarized ytterbium laser source

Science.gov (United States)

Bertrand, Anthony; Liégeois, Flavien; Hernandez, Yves; Giannone, Domenico

2012-06-01

We report on experimental results on a high power, all-fibred, linearly polarized, mode-locked laser at 1.03 μm. The laser generates pulses of 40 ps wide at a repetition rate of 52 MHz, exhibiting 12 kW peak power. Dispersion in optical fibres is controlled to obtain both high power and narrow spectral linewidth. The average output power reached is 25 W with a spectral linewidth of 380 pm and a near diffraction limit beam (M2 < 1.2). This laser is an ideal candidate for applications like IR spectroscopy, where high peak power and narrow linewidth are required for subsequent wavelength conversion.

Modification of semiconductor materials using laser-produced ion streams additionally accelerated in the electric fields

International Nuclear Information System (INIS)

Rosinski, M.; Badziak, B.; Parys, P.; Wolowski, J.; Pisarek, M.

2009-01-01

The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation. For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:∼0.5 J, power density: 10 10 W/cm 2 ) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES

Strengthened glass for high average power laser applications

International Nuclear Information System (INIS)

Cerqua, K.A.; Lindquist, A.; Jacobs, S.D.; Lambropoulos, J.

1987-01-01

Recent advancements in high repetition rate and high average power laser systems have put increasing demands on the development of improved solid state laser materials with high thermal loading capabilities. The authors have developed a process for strengthening a commercially available Nd doped phosphate glass utilizing an ion-exchange process. Results of thermal loading fracture tests on moderate size (160 x 15 x 8 mm) glass slabs have shown a 6-fold improvement in power loading capabilities for strengthened samples over unstrengthened slabs. Fractographic analysis of post-fracture samples has given insight into the mechanism of fracture in both unstrengthened and strengthened samples. Additional stress analysis calculations have supported these findings. In addition to processing the glass' surface during strengthening in a manner which preserves its post-treatment optical quality, the authors have developed an in-house optical fabrication technique utilizing acid polishing to minimize subsurface damage in samples prior to exchange treatment. Finally, extension of the strengthening process to alternate geometries of laser glass has produced encouraging results, which may expand the potential or strengthened glass in laser systems, making it an exciting prospect for many applications

Development of high power chemical oxygen lodine laser

Energy Technology Data Exchange (ETDEWEB)

Kim, Cheol Jung; Choi, Y. D.; Chung, C. M.; Kim, M. S.; Baik, S. H.; Kwon, S. O.; Park, S. K.; Kim, T. S

2001-10-01

This project is directed to construct 10kW Chemical Oxygen Iodine Laser (COIL) for decommissioning of old nuclear facilities, and to get the key technology that can be used for the development of high energy laser weapon. COIL is possible up to MW class in proportion to the amount of chemical reaction. For this reason, high energy laser weapon including Airborne Laser (ABL) and Airborne Tactical Laser (ATL) has been developed as a military use in USA. Recently, many research group have been doing a development study of COIL for nuclear and industrial use in material processing such as cutting and decommissioning by combining laser beam delivery through optical fiber. The Chemical Oxygen Iodine Laser of 6 kW output power has been developed in this project. The main technologies of chemical reaction and supersonic fluid control were developed. This technology can be applied for construction of 10 kW laser system. This laser can be used for old nuclear facilities and heavy industry by combining laser beam delivery through optical fiber. The development of High Energy Laser (HEL) weapon is necessary as a military use, and we conclude that Airborne Tactical Laser should be developed in our country.

Driver circuit for pulse modulation of a semiconductor laser

International Nuclear Information System (INIS)

Ueki, A.

1975-01-01

A pulse modulation driver circuit for a semiconductor laser is disclosed which discriminates among input pulse signals composed of binary codes to detect the occurrence of a pulse having a code of ''I'' following a pulse having a code of ''0''. Detection of this pattern is used to control the driver to increase either or both the width or peak value of the pulse having a code of 1. The effect of this is to eliminate a pattern effect in the light emitted by the semiconductor laser caused by an attenuation of the population inversion in the laser. (U.S.)

High-throughput machining using a high-average power ultrashort pulse laser and high-speed polygon scanner

Science.gov (United States)

Schille, Joerg; Schneider, Lutz; Streek, André; Kloetzer, Sascha; Loeschner, Udo

2016-09-01

High-throughput ultrashort pulse laser machining is investigated on various industrial grade metals (aluminum, copper, and stainless steel) and Al2O3 ceramic at unprecedented processing speeds. This is achieved by using a high-average power picosecond laser in conjunction with a unique, in-house developed polygon mirror-based biaxial scanning system. Therefore, different concepts of polygon scanners are engineered and tested to find the best architecture for high-speed and precision laser beam scanning. In order to identify the optimum conditions for efficient processing when using high-average laser powers, the depths of cavities made in the samples by varying the processing parameter settings are analyzed and, from the results obtained, the characteristic removal values are specified. For overlapping pulses of optimum fluence, the removal rate is as high as 27.8 mm3/min for aluminum, 21.4 mm3/min for copper, 15.3 mm3/min for stainless steel, and 129.1 mm3/min for Al2O3, when a laser beam of 187 W average laser powers irradiates. On stainless steel, it is demonstrated that the removal rate increases to 23.3 mm3/min when the laser beam is very fast moving. This is thanks to the low pulse overlap as achieved with 800 m/s beam deflection speed; thus, laser beam shielding can be avoided even when irradiating high-repetitive 20-MHz pulses.

Modes in light wave propagating in semiconductor laser

Science.gov (United States)

Manko, Margarita A.

1994-01-01

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

Application of statistical methods (SPC) for an optimized control of the irradiation process of high-power semiconductors

International Nuclear Information System (INIS)

Mittendorfer, J.; Zwanziger, P.

2000-01-01

High-power bipolar semiconductor devices (thyristors and diodes) in a disc-type shape are key components (semiconductor switches) for high-power electronic systems. These systems are important for the economic design of energy transmission systems, i.e. high-power drive systems, static compensation and high-voltage DC transmission lines. In their factory located in Pretzfeld, Germany, the company, eupec GmbH+Co.KG (eupec), is producing disc-type devices with ceramic encapsulation in the high-end range for the world market. These elements have to fulfill special customer requirements and therefore deliver tailor-made trade-offs between their on-state voltage and dynamic switching behaviour. This task can be achieved by applying a dedicated electron irradiation on the semiconductor pellets, which tunes this trade-off. In this paper, the requirements to the irradiation company Mediscan GmbH, from the point of view of the semiconductor manufacturer, are described. The actual strategy for controlling the irradiation results to fulfill these requirements are presented, together with the choice of relevant parameters from the viewpoint of the irradiation company. The set of process parameters monitored, using statistical process control (SPC) techniques, includes beam current and energy, conveyor speed and irradiation geometry. The results are highlighted and show the successful co-operation in this business. Watching this process vice versa, an idea is presented and discussed to develop the possibilities of a highly sensitive dose detection device by using modified diodes, which could function as accurate yet cheap and easy-to-use detectors as routine dosimeters for irradiation institutes. (author)

Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

Science.gov (United States)

Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

2016-11-15

Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

Laser applications in materials processing

International Nuclear Information System (INIS)

Ready, J.F.

1980-01-01

The seminar focused on laser annealing of semiconductors, laser processing of semiconductor devices and formation of coatings and powders, surface modification with lasers, and specialized laser processing methods. Papers were presented on the theoretical analysis of thermal and mass transport during laser annealing, applications of scanning continuous-wave and pulsed lasers in silicon technology, laser techniques in photovoltaic applications, and the synthesis of ceramic powders from laser-heated gas-phase reactants. Other papers included: reflectance changes of metals during laser irradiation, surface-alloying using high-power continuous lasers, laser growth of silicon ribbon, and commercial laser-shock processes

Novel High Power Type-I Quantum Well Cascade Diode Lasers

Science.gov (United States)

2017-08-30

Novel High Power Type-I Quantum Well Cascade Diode Lasers The views, opinions and/or findings contained in this report are those of the author(s...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6... High Power Type-I Quantum Well Cascade Diode Lasers Report Term: 0-Other Email: leon.shterengas@stonybrook.edu Distribution Statement: 1-Approved

Diagnostic studies of molecular plasmas using mid-infrared semiconductor lasers

NARCIS (Netherlands)

Röpcke, J.; Welzel, S.; Lang, N.; Hempel, F.; Gatilova, L.; Guaitella, O.; Rousseau, A.; Davies, P.B.

2008-01-01

Within the last decade mid-infrared absorption spectroscopy between 3 and 20 µm, known as infrared laser absorption spectroscopy (IRLAS) and based on tuneable semiconductor lasers, namely lead salt diode lasers, often called tuneable diode lasers (TDL), and quantum cascade lasers (QCL) has

High-power ultrashort fiber laser for solar cells micromachining

Science.gov (United States)

Lecourt, J.-B.; Duterte, C.; Liegeois, F.; Lekime, D.; Hernandez, Y.; Giannone, D.

2012-02-01

We report on a high-power ultra-short fiber laser for thin film solar cells micromachining. The laser is based on Chirped Pulse Amplification (CPA) scheme. The pulses are stretched to hundreds of picoseconds prior to amplification and can be compressed down to picosecond at high energy. The repetition rate is adjustable from 100 kHz to 1 MHz and the optical average output power is close to 13 W (before compression). The whole setup is fully fibred, except the compressor achieved with bulk gratings, resulting on a compact and reliable solution for cold ablation.

Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

Science.gov (United States)

Opalevs, D.; Scholz, M.; Stuhler, J.; Gilfert, C.; Liu, L. J.; Wang, X. Y.; Vetter, A.; Kirner, R.; Scharf, T.; Noell, W.; Rockstuhl, C.; Li, R. K.; Chen, C. T.; Voelkel, R.; Leisching, P.

2018-02-01

We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

Cutting performances with new industrial continuous wave ND:YAG high power lasers

International Nuclear Information System (INIS)

Chagnot, C.; Dinechin, G. de; Canneau, G.

2010-01-01

Dismantling is a great challenge for nuclear companies which are facing with the cleaning of former nuclear sites. Among the available cutting processes is the multi-kilowatts laser whose power is transmitted through optical fibers. Unlike other cutting processes such as the plasma arc cutting process or the oxy-cutting process, the laser process can be easily implemented by robotic equipments. The mechanised robotic arm carries a laser cutting head to perform, with remote-controlled equipments, the cutting operation. The present study deals with the performances which can be reached with high power continuous wave ND:YAG lasers. The cutting tests were carried out up to 8 kW. The laser power was delivered through a specific power supply chain: a 0.4 mm fiber was transporting the power from the laser to a first interface (coupler) then a second 0.6 mm fiber was bringing the laser power to the cutting head. This solution allowed a power delivery chain whose length could be as high as 100 + 20/50 m. Another advantage of this kind of power supply is that the first fiber can be set in a non-contaminated environment whereas the second fiber lies in the contaminated area. The cutting head used for these tests was a specific tool developed for this laser dismantling work: it is a laser cutting head cooled by pressurized air. This tool was developed with the requirement to be able to sustain a laser power of 14 kW. The pressurized air used to cool the head is also used as cutting gas. The cutting capability was about 10 mm by kW. At the power of 8 kW, austenitic steel plates of thickness 100 mm were cut. These performances were reached with the cut started on the plate's edge. If the cut started in the middle of the plate, the cutting performances were not so high: 8 kW became the power to drill and to cut plates of thickness 40 mm.

Thermal Response to High-Power Holmium Laser Lithotripsy.

Science.gov (United States)

Aldoukhi, Ali H; Ghani, Khurshid R; Hall, Timothy L; Roberts, William W

2017-12-01

The aim of this study was to investigate "caliceal" fluid temperature changes during holmium laser activation/lithotripsy using settings up to 40 W power output with different irrigation flow rates. The experimental system consisted of a glass test tube (diameter 10 mm/length 75 mm) filled with deionized water, to mimic a calix. Real-time temperature was recorded using a thermocouple (Physitemp, NJ) positioned 5 mm from the bottom of the tube. A 200 μm laser fiber (Flexiva; Boston Scientific, MA) was introduced through the working channel of a disposable ureteroscope (LithoVue; Boston Scientific) and the laser fiber tip was positioned 15 mm above the bottom of the test tube. Deionized water irrigation (room temperature) through the working channel of the ureteroscope was delivered at flow rates of 0, 7-8, 14-15, and 38-40 mL/minute. A 120-W holmium laser (pulse 120; Lumenis, CA) was used. The following settings were explored: 0.5 J × 10 Hz, 1.0 J × 10 Hz, 0.5 J × 20 Hz, 1.0 J × 20 Hz, 0.5 J × 40 Hz, 1.0 J × 40 Hz, and 0.5 J × 80 Hz. During each experiment, the laser was activated continuously for 60 seconds. Temperature increased with increasing laser power output and decreasing irrigation flow rate. The highest temperature, 70.3°C (standard deviation 2.7), occurred with laser setting of 1.0 J × 40 Hz and no irrigation after 60 seconds of continuous laser firing. None of the tested laser settings and irrigation parameters produced temperature exceeding 51°C when activated for only 10 seconds of continuous laser firing. High-power holmium settings fired in long bursts with low irrigation flow rates can generate high fluid temperatures in a laboratory "caliceal" model. Awareness of this risk allows urologist to implement a variety of techniques (higher irrigation flow rates, intermittent laser activation, and potentially cooled irrigation fluid) to control and mitigate thermal

Functionally graded materials produced with high power lasers

NARCIS (Netherlands)

De Hosson, J. T. M.; Ocelik, V.; Chandra, T; Torralba, JM; Sakai, T

2003-01-01

In this keynote paper two examples will be present of functionally graded materials produced with high power Nd:YAG lasers. In particular the conditions for a successful Laser Melt Injection (LMI) of SiC and WC particles into the melt pool of A18Si and Ti6Al4V alloys are presented. The formation of

High-power ultralong-wavelength Tm-doped silica fiber laser cladding-pumped with a random distributed feedback fiber laser.

Science.gov (United States)

Jin, Xiaoxi; Du, Xueyuan; Wang, Xiong; Zhou, Pu; Zhang, Hanwei; Wang, Xiaolin; Liu, Zejin

2016-07-15

We demonstrated a high-power ultralong-wavelength Tm-doped silica fiber laser operating at 2153 nm with the output power exceeding 18 W and the slope efficiency of 25.5%. A random distributed feedback fiber laser with the center wavelength of 1173 nm was employed as pump source of Tm-doped fiber laser for the first time. No amplified spontaneous emissions or parasitic oscillations were observed when the maximum output power reached, which indicates that employing 1173 nm random distributed feedback fiber laser as pump laser is a feasible and promising scheme to achieve high-power emission of long-wavelength Tm-doped fiber laser. The output power of this Tm-doped fiber laser could be further improved by optimizing the length of active fiber, reflectivity of FBGs, increasing optical efficiency of pump laser and using better temperature management. We also compared the operation of 2153 nm Tm-doped fiber lasers pumped with 793 nm laser diodes, and the maximum output powers were limited to ~2 W by strong amplified spontaneous emission and parasitic oscillation in the range of 1900-2000 nm.

1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

OpenAIRE

Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

2000-01-01

We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

Comparative study of the performance of semiconductor laser based coherent Doppler lidars

DEFF Research Database (Denmark)

Rodrigo, Peter John; Pedersen, Christian

2012-01-01

Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of conti......Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development...... of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. In this work, we compare the performance of two candidate emitters for an allsemiconductor CDL system: (1) a monolithic master-oscillator-power-amplifier (MOPA) SL and (2) an external-cavity tapered diode laser (ECTDL)....

High power electron beam accelerators for gas laser excitation

International Nuclear Information System (INIS)

Kelly, J.G.; Martin, T.H.; Halbleib, J.A.

1976-06-01

A preliminary parameter investigation has been used to determine a possible design of a high-power, relativistic electron beam, transversely excited laser. Based on considerations of present and developing pulsed power technology, broad area diode physics and projected laser requirements, an exciter is proposed consisting of a Marx generator, pulse shaping transmission lines, radially converging ring diodes and a laser chamber. The accelerator should be able to deliver approximately 20 kJ of electron energy at 1 MeV to the 10 4 cm 2 cylindrical surface of a laser chamber 1 m long and 0.3 m in diameter in 24 ns with very small azimuthal asymmetry and uniform radial deposition

Review on the dynamics of semiconductor nanowire lasers

Science.gov (United States)

Röder, Robert; Ronning, Carsten

2018-03-01

Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

Mode profiling of optical fibers at high laser powers

DEFF Research Database (Denmark)

Nielsen, Peter Carøe; Pedersen, David Bue; Simonsen, R.B.

2008-01-01

of the focused spot can be determined. The analyser is based on the principle of a rotating wire being swept though the laser beam, while the reflected signal is recorded [1]. By changing the incident angle of the rotating rod from 0° to 360° in relation to the fiber, the full profile of the laser beam...... is obtained. Choosing a highly reflective rod material and a sufficiently high rotation speed, these measurements can be done with high laser powers, without any additional optical elements between the fiber and analyzer. The performance of the analyzer was evaluated by coupling laser light into different...

High-power diode laser bars as pump sources for fiber lasers and amplifiers (Invited Paper)

Science.gov (United States)

Bonati, G.; Hennig, P.; Wolff, D.; Voelckel, H.; Gabler, T.; Krause, U.; T'nnermann, A.; Reich, M.; Limpert, J.; Werner, E.; Liem, A.

2005-04-01

Fiber lasers are pumped by fibercoupled, multimode single chip devices at 915nm. That"s what everybody assumes when asked for the type of fiber laser pumps and it was like this for many years. Coming up as an amplifier for telecom applications, the amount of pump power needed was in the range of several watts. Highest pump powers for a limited market entered the ten watts range. This is a range of power that can be covered by highly reliable multimode chips, that have to survive up to 25 years, e.g. in submarine applications. With fiber lasers entering the power range and the application fields of rod and thin disc lasers, the amount of pump power needed raised into the area of several hundred watts. In this area of pump power, usually bar based pumps are used. This is due to the much higher cost pressure of the industrial customers compared to telecom customers. We expect more then 70% of all industrial systems to be pumped by diode laser bars. Predictions that bar based pumps survive for just a thousand hours in cw-operation and fractions of this if pulsed are wrong. Bar based pumps have to perform on full power for 10.000h on Micro channel heat sinks and 20.000h on passive heatsinks in industrial applications, and they do. We will show a variety of data, "real" long time tests and statistics from the JENOPTIK Laserdiode as well as data of thousands of bars in the field, showing that bar based pumps are not just well suitable for industrial applications on high power levels, but even showing benefits compared to chip based pumps. And it"s reasonable, that the same objectives of cost effectiveness, power and lifetime apply as well to thin disc, rod and slab lasers as to fiber lasers. Due to the pumping of fiber lasers, examples will be shown, how to utilize bars for high brightness fiber coupling. In this area, the automation is on its way to reduce the costs on the fibercoupling, similar to what had been done in the single chip business. All these efforts are

Propagation Characteristics of High-Power Vortex Laguerre-Gaussian Laser Beams in Plasma

Directory of Open Access Journals (Sweden)

Zhili Lin

2018-04-01

Full Text Available The propagation characteristics of high-power laser beams in plasma is an important research topic and has many potential applications in fields such as laser machining, laser-driven accelerators and laser-driven inertial confined fusion. The dynamic evolution of high-power Laguerre-Gaussian (LG beams in plasma is numerically investigated by using the finite-difference time-domain (FDTD method based on the nonlinear Drude model, with both plasma frequency and collision frequency modulated by the light intensity of laser beam. The numerical algorithms and implementation techniques of FDTD method are presented for numerically simulating the nonlinear permittivity model of plasma and generating the LG beams with predefined parameters. The simulation results show that the plasma has different field modulation effects on the two exemplified LG beams with different cross-sectional patterns. The self-focusing and stochastic absorption phenomena of high-power laser beam in plasma are also demonstrated. This research also provides a new means for the field modulation of laser beams by plasma.

High power diode lasers emitting from 639 nm to 690 nm

Science.gov (United States)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Self-channeling of high-power laser pulses through strong atmospheric turbulence

Science.gov (United States)

Peñano, J.; Palastro, J. P.; Hafizi, B.; Helle, M. H.; DiComo, G. P.

2017-07-01

We present an unusual example of truly long-range propagation of high-power laser pulses through strong atmospheric turbulence. A form of nonlinear self-channeling is achieved when the laser power is close to the self-focusing power of air and the transverse dimensions of the pulse are smaller than the coherence diameter of turbulence. In this mode, nonlinear self-focusing counteracts diffraction, and turbulence-induced spreading is greatly reduced. Furthermore, the laser intensity is below the ionization threshold so that multiphoton absorption and plasma defocusing are avoided. Simulations show that the pulse can propagate many Rayleigh lengths (several kilometers) while maintaining a high intensity. In the presence of aerosols, or other extinction mechanisms that deplete laser energy, the pulse can be chirped to maintain the channeling.

Towards shorter wavelength x-ray lasers using a high power, short pulse pump laser

International Nuclear Information System (INIS)

Tighe, W.; Krushelnick, K.; Valeo, E.; Suckewer, S.

1991-05-01

A near-terawatt, KrF* laser system, focussable to power densities >10 18 W/cm 2 has been constructed for use as a pump laser in various schemes aimed at the development of x-ray lasing below 5nm. The laser system along with output characteristics such as the pulse duration, the focal spot size, and the percentage of amplified spontaneous emission (ASE) emitted along with the laser pulse will be presented. Schemes intended to lead to shorter wavelength x-ray emission will be described. The resultant requirements on the pump laser characteristics and the target design will be outlined. Results from recent solid target experiments and two-laser experiments, showing the interaction of a high-power, short pulse laser with a preformed plasma, will be presented. 13 refs., 5 figs

Method to improve near-field nonlinearity of a high-power diode laser array on a microchannel cooler

Science.gov (United States)

Zhang, Hongyou; Jia, Yangtao; Cai, Wanshao; Tao, Chunhua; Zah, Chung-en; Liu, Xingsheng

2018-03-01

Due to thermal stress, each emitter in a semiconductor laser bar or array is vertically displaced along the p-n junction; the result is that each emitter is not in a line, called near-field nonlinearity. Near-field nonlinearity along a laser bar (also known as "SMILE" effect) degrades the laser beam brightness, which causes an adverse effect on optical coupling and beam shaping. A large SMILE value causes a large divergence angle after collimation and a wider line after collimation and focusing. We simulate the factors affecting the SMILE value of a high-power diode laser array on a microchannel cooler (MCC). According to the simulation results, we have fabricated a series of laser bars bonded on MCCs with lower SMILE value. After simulation and experiment analysis, we found the key factor to affect SMILE is the deformation of the thin MCC because of the distribution of strain and stress in it. We also decreased the SMILE value of 1-cm-wide full bar AuSn bonded on MCCs from 12 to 1 μm by balancing force on MCC to minimize the deformation.

Power semiconductor device adaptive cooling assembly

NARCIS (Netherlands)

2011-01-01

The invention relates to a power semiconductor device (100) cooling assembly for cooling a power semiconductor device (100), wherein the assembly comprises an actively cooled heat sink (102) and a controller (208; 300), wherein the controller (208; 300) is adapted for adjusting the cooling

Advancements of ultra-high peak power laser diode arrays

Science.gov (United States)

Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.

2018-02-01

Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

Aluminium alloys welding with high-power Nd:YAG lasers

International Nuclear Information System (INIS)

Garcia Orza, J.A.

1998-01-01

Aluminium alloys have good mechanical properties (high strength-to-weight ratio, corrosion resistance) and good workability. their applications are growing up, specially in the transportation industry. Weldability is however poorer than in other materials; recent advances in high power YAG laser are the key to obtain good appearance welds and higher penetration, at industrial production rates. Results of the combination of high power YAG beams with small fiber diameters and specific filler wires are presented. It is also characterized the air bone particulate material, by-product of the laser process: emission rates, size distribution and chemical composition are given for several aluminium alloys. (Author) 6 refs

High-power copper vapour lasers and applications

Energy Technology Data Exchange (ETDEWEB)

Chang, J.J.; Warner, B.E.; Boley, C.D.; Dragon, E.P.

1995-08-01

Expanded applications of copper vapor lasers has prompted increased demand for higher power and better beam quality. This paper reports recent progress in laser power scaling, MOPA operation, beam quality improvement, and applications in precision laser machining. Issues such as gas heating, radial delay, discharge instability, and window heating will also be discussed.

Study of novel plasma devices generated by high power lasers coupled with a micro-pulse power technology

International Nuclear Information System (INIS)

Nishida, A; Chen, Z L; Jin, Z; Kondo, K; Nakagawa, M; Kodama, R; Arima, H; Yoneda, H

2008-01-01

The authors have proposed introducing a micro pulse power technology in high power laser plasma experiments to boost up the return current, resulting in efficiently guiding of energetic electrons. High current pulse power generators with a pulse laser trigger system generate high-density plasma that is well conductor. To efficiently guiding by using a micro pulse power, we estimated parameter of a micro pulse power system that is voltage of rise time, current, charging voltage and capacitance

Ultrafast laser-semiconductor interactions

International Nuclear Information System (INIS)

Schile, L.A.

1996-01-01

Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

High-power Yb-doped continuous-wave and pulsed fibre lasers

Indian Academy of Sciences (India)

2014-01-05

Jan 5, 2014 ... In this article, a review of Yb-doped CW and pulsed fibre lasers along with our study on self-pulsing dynamics in CW fibre lasers to find its role in high-power fibre laser development and the physical ... Solid State Laser Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India ...

Nitride semiconductor devices fundamentals and applications

CERN Document Server

Morkoç, Hadis

2013-01-01

This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

High-Power Laser Cutting of Steel Plates: Heat Affected Zone Analysis

Directory of Open Access Journals (Sweden)

Imed Miraoui

2016-01-01

Full Text Available The thermal effect of CO2 high-power laser cutting on cut surface of steel plates is investigated. The effect of the input laser cutting parameters on the melted zone depth (MZ, the heat affected zone depth (HAZ, and the microhardness beneath the cut surface is analyzed. A mathematical model is developed to relate the output process parameters to the input laser cutting parameters. Three input process parameters such as laser beam diameter, cutting speed, and laser power are investigated. Mathematical models for the melted zone and the heat affected zone depth are developed by using design of experiment approach (DOE. The results indicate that the input laser cutting parameters have major effect on melted zone, heat affected zone, and microhardness beneath cut surface. The MZ depth, the HAZ depth, and the microhardness beneath cut surface increase as laser power increases, but they decrease with increasing cutting speed. Laser beam diameter has a negligible effect on HAZ depth but it has a remarkable effect on MZ depth and HAZ microhardness. The melted zone depth and the heat affected zone depth can be reduced by increasing laser cutting speed and decreasing laser power and laser beam diameter.

Selective injection locking of a multi-mode semiconductor laser to a multi-frequency reference beam

Science.gov (United States)

Pramod, Mysore Srinivas; Yang, Tao; Pandey, Kanhaiya; Giudici, Massimo; Wilkowski, David

2014-07-01

Injection locking is a well known and commonly used method for coherent light amplification. Usually injection locking is obtained on a single-mode laser injected by a single-frequency seeding beam. In this work we show that selective injection locking of a single-frequency may also be achieved on a multi-mode semiconductor laser injected by a multi-frequency seeding beam, if the slave laser provides sufficient frequency filtering. This selective injection locking condition depends critically on the frequency detuning between the free-running slave emission frequency and each injected frequency component. Stable selective injection locking to a set of three seeding components separated by 1.2 GHz is obtained. This system provides an amplification up to 37 dB of each component. This result suggests that, using distinct slave lasers for each frequency line, a set of mutually coherent high-power radiation modes can be tuned in the GHz frequency domain.

Fiber Optic Cables for Transmission of High-Power Laser Pulses in Spaceflight Applications

Science.gov (United States)

Thomes, W. J., Jr.; Ott, M. N.; Chuska, R. F.; Switzer, R. C.; Blair, D. E.

2010-01-01

Lasers with high peak power pulses are commonly used in spaceflight missions for a wide range of applications, from LIDAR systems to optical communications. Due to the high optical power needed, the laser has to be located on the exterior of the satellite or coupled through a series of free space optics. This presents challenges for thermal management, radiation resistance, and mechanical design. Future applications will require multiple lasers located close together, which further complicates the design. Coupling the laser energy into a fiber optic cable allows the laser to be relocated to a more favorable position on the spacecraft. Typical fiber optic termination procedures are not sufficient for injection of these high-power laser pulses without catastrophic damage to the fiber endface. In the current study, we will review the causes of fiber damage during high-power injection and discuss our new manufacturing procedures that overcome these issues to permit fiber use with high reliability in these applications. We will also discuss the proper methods for launching the laser pulses into the fiber to avoid damage and how this is being implemented for current spaceflight missions.

Fiber optic cables for transmission of high-power laser pulses in spaceflight applications

Science.gov (United States)

Thomes, W. J.; Ott, M. N.; Chuska, R. F.; Switzer, R. C.; Blair, D. E.

2017-11-01

Lasers with high peak power pulses are commonly used in spaceflight missions for a wide range of applications, from LIDAR systems to optical communications. Due to the high optical power needed, the laser has to be located on the exterior of the satellite or coupled through a series of free space optics. This presents challenges for thermal management, radiation resistance, and mechanical design. Future applications will require multiple lasers located close together, which further complicates the design. Coupling the laser energy into a fiber optic cable allows the laser to be relocated to a more favorable position on the spacecraft. Typical fiber optic termination procedures are not sufficient for injection of these high-power laser pulses without catastrophic damage to the fiber endface. In the current study, we will review the causes of fiber damage during high-power injection and discuss our new manufacturing procedures that overcome these issues to permit fiber use with high reliability in these applications. We will also discuss the proper methods for launching the laser pulses into the fiber to avoid damage and how this is being implemented for current spaceflight missions.

Highly-reliable laser diodes and modules for spaceborne applications

Science.gov (United States)

Deichsel, E.

2017-11-01

Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

High average power diode pumped solid state lasers for CALIOPE

International Nuclear Information System (INIS)

Comaskey, B.; Halpin, J.; Moran, B.

1994-07-01

Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

Solar Pumped High Power Solid State Laser for Space Applications

Science.gov (United States)

Fork, Richard L.; Laycock, Rustin L.; Green, Jason J. A.; Walker, Wesley W.; Cole, Spencer T.; Frederick, Kevin B.; Phillips, Dane J.

2004-01-01

Highly coherent laser light provides a nearly optimal means of transmitting power in space. The simplest most direct means of converting sunlight to coherent laser light is a solar pumped laser oscillator. A key need for broadly useful space solar power is a robust solid state laser oscillator capable of operating efficiently in near Earth space at output powers in the multi hundred kilowatt range. The principal challenges in realizing such solar pumped laser oscillators are: (1) the need to remove heat from the solid state laser material without introducing unacceptable thermal shock, thermal lensing, or thermal stress induced birefringence to a degree that improves on current removal rates by several orders of magnitude and (2) to introduce sunlight at an effective concentration (kW/sq cm of laser cross sectional area) that is several orders of magnitude higher than currently available while tolerating a pointing error of the spacecraft of several degrees. We discuss strategies for addressing these challenges. The need to remove the high densities of heat, e.g., 30 kW/cu cm, while keeping the thermal shock, thermal lensing and thermal stress induced birefringence loss sufficiently low is addressed in terms of a novel use of diamond integrated with the laser material, such as Ti:sapphire in a manner such that the waste heat is removed from the laser medium in an axial direction and in the diamond in a radial direction. We discuss means for concentrating sunlight to an effective areal density of the order of 30 kW/sq cm. The method integrates conventional imaging optics, non-imaging optics and nonlinear optics. In effect we use a method that combines some of the methods of optical pumping solid state materials and optical fiber, but also address laser media having areas sufficiently large, e.g., 1 cm diameter to handle the multi-hundred kilowatt level powers needed for space solar power.

Fault analysis and strategy of high pulsed power supply for high power laser

International Nuclear Information System (INIS)

Liu Kefu; Qin Shihong; Li Jin; Pan Yuan; Yao Zonggan; Zheng Wanguo; Guo Liangfu; Zhou Peizhang; Li Yizheng; Chen Dehuai

2001-01-01

according to the requirements of driving flash-lamp, a high pulsed power supply (PPS) based on capacitors as energy storage elements is designed. The author analyzes in detail the faults of high pulsed power supply for high power laser. Such as capacitor internal short-circuit, main bus breakdown to ground, flashlamp sudden short or break. The fault current and voltage waveforms were given by circuit simulations. Based on the analysis and computation, the protection strategy with the fast fuse and ZnO was put forward, which can reduce the damage of PPS to the lower extent and provide the personnel safe and collateral property from the all threats. The preliminary experiments demonstrated that the design of the PPS can satisfy the project requirements

Recent Results in High Power CO2-Laser Cutting for Shipbuilding Industry

DEFF Research Database (Denmark)

Olsen, Flemming Ove; Juhl, Thomas Winther; Nielsen, Jakob Skov

2003-01-01

In 1997 a high power laser cutting and welding test facility was established at the Danish shipyard Odense Steel Shipyard (OSS). Research and development projects were initiated in order to establish the basis for applying the full power of the laser for laser-cutting, by developing mirror based...

High-Power 1180-nm GaInNAs DBR Laser Diodes

DEFF Research Database (Denmark)

Aho, Antti T.; Viheriala, Jukka; Korpijarvi, Ville-Markus

2017-01-01

We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side...... and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow-orange wavelengths....

970-nm ridge waveguide diode laser bars for high power DWBC systems

Science.gov (United States)

Wilkens, Martin; Erbert, Götz; Wenzel, Hans; Knigge, Andrea; Crump, Paul; Maaßdorf, Andre; Fricke, Jörg; Ressel, Peter; Strohmaier, Stephan; Schmidt, Berthold; Tränkle, Günther

2018-02-01

de lasers are key components in material processing laser systems. While mostly used as pump sources for solid state or fiber lasers, direct diode laser systems using dense wavelength multiplexing have come on the market in recent years. These systems are realized with broad area lasers typically, resulting in beam quality inferior to disk or fiber lasers. We will present recent results of highly efficient ridge waveguide (RW) lasers, developed for dense-wavelength-beamcombining (DWBC) laser systems expecting beam qualities comparable to solid state laser systems and higher power conversion efficiencies (PCE). The newly developed RW lasers are based on vertical structures with an extreme double asymmetric large optical cavity. Besides a low vertical divergence these structures are suitable for RW-lasers with (10 μm) broad ridges, emitting in a single mode with a good beam quality. The large stripe width enables a lateral divergence below 10° (95 % power content) and a high PCE by a comparably low series resistance. We present results of single emitters and small test arrays under different external feedback conditions. Single emitters can be tuned from 950 nm to 975 nm and reach 1 W optical power with more than 55 % PCE and a beam quality of M2 < 2 over the full wavelength range. The spectral width is below 30 pm FWHM. 5 emitter arrays were stabilized using the same setup. Up to now we reached 3 W optical power, limited by power supply, with 5 narrow spectral lines.

Optical trapping with Bessel beams generated from semiconductor lasers

International Nuclear Information System (INIS)

Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U

2014-01-01

In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

High power, short pulses ultraviolet laser for the development of a new x-ray laser

International Nuclear Information System (INIS)

Meixler, L.; Nam, C.H.; Robinson, J.; Tighe, W.; Krushelnick, K.; Suckewer, S.; Goldhar, J.; Seely, J.; Feldman, U.

1989-04-01

A high power, short pulse ultraviolet laser system (Powerful Picosecond-Laser) has been developed at the Princeton Plasma Physics Laboratory (PPPL) as part of experiments designed to generate shorter wavelength x-ray lasers. With the addition of pulse compression and a final KrF amplifier the laser output is expected to have reached 1/3-1/2 TW (10 12 watts) levels. The laser system, particularly the final amplifier, is described along with some initial soft x-ray spectra from laser-target experiments. The front end of the PP-Laser provides an output of 20--30 GW (10 9 watts) and can be focussed to intensities of /approximately/10 16 W/cm 2 . Experiments using this output to examine the effects of a prepulse on laser-target interaction are described. 19 refs., 14 figs

Continuous wave power scaling in high power broad area quantum cascade lasers

Science.gov (United States)

Suttinger, M.; Leshin, J.; Go, R.; Figueiredo, P.; Shu, H.; Lyakh, A.

2018-02-01

Experimental and model results for high power broad area quantum cascade lasers are presented. Continuous wave power scaling from 1.62 W to 2.34 W has been experimentally demonstrated for 3.15 mm-long, high reflection-coated 5.6 μm quantum cascade lasers with 15 stage active region for active region width increased from 10 μm to 20 μm. A semi-empirical model for broad area devices operating in continuous wave mode is presented. The model uses measured pulsed transparency current, injection efficiency, waveguide losses, and differential gain as input parameters. It also takes into account active region self-heating and sub-linearity of pulsed power vs current laser characteristic. The model predicts that an 11% improvement in maximum CW power and increased wall plug efficiency can be achieved from 3.15 mm x 25 μm devices with 21 stages of the same design but half doping in the active region. For a 16-stage design with a reduced stage thickness of 300Å, pulsed roll-over current density of 6 kA/cm2 , and InGaAs waveguide layers; optical power increase of 41% is projected. Finally, the model projects that power level can be increased to 4.5 W from 3.15 mm × 31 μm devices with the baseline configuration with T0 increased from 140 K for the present design to 250 K.

Efficient, High-Power Mid-Infrared Laser for National Securityand Scientific Applications

Energy Technology Data Exchange (ETDEWEB)

Kiani, Leily S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2017-11-02

The LLNL fiber laser group developed a unique short-wave-infrared, high-pulse energy, highaverage- power fiber based laser. This unique laser source has been used in combination with a nonlinear frequency converter to generate wavelengths, useful for remote sensing and other applications in the mid-wave infrared (MWIR). Sources with high average power and high efficiency in this MWIR wavelength region are not yet available with the size, weight, and power requirements or energy efficiency necessary for future deployment. The LLNL developed Fiber Laser Pulsed Source (FiLPS) design was adapted to Erbium doped silica fibers for 1.55 μm pumping of Cadmium Silicon Phosphide (CSP). We have demonstrated, for the first time optical parametric amplification of 2.4 μm light via difference frequency generation using CSP with an Erbium doped fiber source. In addition, for efficiency comparison purposes, we also demonstrated direct optical parametric generation (OPG) as well as optical parametric oscillation (OPO).

A Novel Kind of Transverse Micro-Stack High-Power Diode Bars

International Nuclear Information System (INIS)

Lei, Zhang; Bi-Feng, Cui; Jian-Jun, Li; Wei-Lling, Guo; Zhi-Qun, Wang; Guang-Di, Shen

2008-01-01

Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large optical cavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60W under 50A driving current and the slope efficiency reaches 1.55W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transverse strongly coupled devices

Parametric Study and Multi-Criteria Optimization in Laser Cladding by a High Power Direct Diode Laser

Science.gov (United States)

Farahmand, Parisa; Kovacevic, Radovan

2014-12-01

In laser cladding, the performance of the deposited layers subjected to severe working conditions (e.g., wear and high temperature conditions) depends on the mechanical properties, the metallurgical bond to the substrate, and the percentage of dilution. The clad geometry and mechanical characteristics of the deposited layer are influenced greatly by the type of laser used as a heat source and process parameters used. Nowadays, the quality of fabricated coating by laser cladding and the efficiency of this process has improved thanks to the development of high-power diode lasers, with power up to 10 kW. In this study, the laser cladding by a high power direct diode laser (HPDDL) as a new heat source in laser cladding was investigated in detail. The high alloy tool steel material (AISI H13) as feedstock was deposited on mild steel (ASTM A36) by a HPDDL up to 8kW laser and with new design lateral feeding nozzle. The influences of the main process parameters (laser power, powder flow rate, and scanning speed) on the clad-bead geometry (specifically layer height and depth of the heat affected zone), and clad microhardness were studied. Multiple regression analysis was used to develop the analytical models for desired output properties according to input process parameters. The Analysis of Variance was applied to check the accuracy of the developed models. The response surface methodology (RSM) and desirability function were used for multi-criteria optimization of the cladding process. In order to investigate the effect of process parameters on the molten pool evolution, in-situ monitoring was utilized. Finally, the validation results for optimized process conditions show the predicted results were in a good agreement with measured values. The multi-criteria optimization makes it possible to acquire an efficient process for a combination of clad geometrical and mechanical characteristics control.

The Multidisk Diode-Pumped High Power Yb:YAG Laser Amplifier of High-Intensity Laser System with 1 kHz Repetition Rate

Science.gov (United States)

Kuptsov, G. V.; Petrov, V. V.; Petrov, V. A.; Laptev, A. V.; Kirpichnikov, A. V.; Pestryakov, E. V.

2018-04-01

The source of instabilities in the multidisk diode-pumped high power Yb:YAG laser amplifier with cryogenic closed-loop cooling in the laser amplification channel of the high-intensity laser system with 1 kHz repetition rate was determined. Dissected copper mounts were designed and used to suppress instabilities and to achieve repeatability of the system. The equilibrium temperature dependency of the active elements on average power was measured. The seed laser for the multidisk amplifier was numerically simulated and designed to allow one to increase pulses output energy after the amplifier up to 500 mJ.

Characterization of high performance silicon-based VMJ PV cells for laser power transmission applications

Science.gov (United States)

Perales, Mico; Yang, Mei-huan; Wu, Cheng-liang; Hsu, Chin-wei; Chao, Wei-sheng; Chen, Kun-hsien; Zahuranec, Terry

2016-03-01

Continuing improvements in the cost and power of laser diodes have been critical in launching the emerging fields of power over fiber (PoF), and laser power beaming. Laser power is transmitted either over fiber (for PoF), or through free space (power beaming), and is converted to electricity by photovoltaic cells designed to efficiently convert the laser light. MH GoPower's vertical multi-junction (VMJ) PV cell, designed for high intensity photovoltaic applications, is fueling the emergence of this market, by enabling unparalleled photovoltaic receiver flexibility in voltage, cell size, and power output. Our research examined the use of the VMJ PV cell for laser power transmission applications. We fully characterized the performance of the VMJ PV cell under various laser conditions, including multiple near IR wavelengths and light intensities up to tens of watts per cm2. Results indicated VMJ PV cell efficiency over 40% for 9xx nm wavelengths, at laser power densities near 30 W/cm2. We also investigated the impact of the physical dimensions (length, width, and height) of the VMJ PV cell on its performance, showing similarly high performance across a wide range of cell dimensions. We then evaluated the VMJ PV cell performance within the power over fiber application, examining the cell's effectiveness in receiver packages that deliver target voltage, intensity, and power levels. By designing and characterizing multiple receivers, we illustrated techniques for packaging the VMJ PV cell for achieving high performance (> 30%), high power (> 185 W), and target voltages for power over fiber applications.

An Evaluation of the Cutting Potential of Different Types of High Power Lasers

DEFF Research Database (Denmark)

Olsen, Flemming Ove

2006-01-01

Laser cutting is a widespread industrial process. The boundaries for the performance of the lasers in terms of cutting capabilities is steadily moving towards higher cutting rates and thicker section cutting. In this paper the potential of different high power laser sources in cutting is evaluated...... based upon the historical development, the available cutting mechanisms understanding and the critical parameters involved in high power laser cutting. From the theoretical point of view, the new laser sources, the Disc-laser and the Fibre laser possess a potential of changing dramatically the limits...... for cutting performance. These theoretical considerations are evaluated against available cutting data....

The dynamical complexity of optically injected semiconductor lasers

International Nuclear Information System (INIS)

Wieczorek, S.; Krauskopf, B.; Simpson, T.B.; Lenstra, D.

2005-01-01

This report presents a modern approach to the theoretical and experimental study of complex nonlinear behavior of a semiconductor laser with optical injection-an example of a widely applied and technologically relevant forced nonlinear oscillator. We show that the careful bifurcation analysis of a rate equation model yields (i) a deeper understanding of already studied physical phenomena, and (ii) the discovery of new dynamical effects, such as multipulse excitability. Different instabilities, cascades of bifurcations, multistability, and sudden chaotic transitions, which are often viewed as independent, are in fact logically connected into a consistent web of bifurcations via special points called organizing centers. This theoretical bifurcation analysis has predictive power, which manifests itself in good agreement with experimental measurements over a wide range of parameters and diversity of dynamics. While it is dealing with the specific system of an optically injected laser, our work constitutes the state-of-the-art in the understanding and modeling of a nonlinear physical system in general

Widely Tunable High-Power Tapered Diode Laser at 1060 nm

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Sumpf, Bernd; Erbert, Götz

2011-01-01

We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser...... operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range....

Centimeter-scale MEMS scanning mirrors for high power laser application

Science.gov (United States)

Senger, F.; Hofmann, U.; v. Wantoch, T.; Mallas, C.; Janes, J.; Benecke, W.; Herwig, Patrick; Gawlitza, P.; Ortega-Delgado, M.; Grune, C.; Hannweber, J.; Wetzig, A.

2015-02-01

A higher achievable scan speed and the capability to integrate two scan axes in a very compact device are fundamental advantages of MEMS scanning mirrors over conventional galvanometric scanners. There is a growing demand for biaxial high speed scanning systems complementing the rapid progress of high power lasers for enabling the development of new high throughput manufacturing processes. This paper presents concept, design, fabrication and test of biaxial large aperture MEMS scanning mirrors (LAMM) with aperture sizes up to 20 mm for use in high-power laser applications. To keep static and dynamic deformation of the mirror acceptably low all MEMS mirrors exhibit full substrate thickness of 725 μm. The LAMM-scanners are being vacuum packaged on wafer-level based on a stack of 4 wafers. Scanners with aperture sizes up to 12 mm are designed as a 4-DOF-oscillator with amplitude magnification applying electrostatic actuation for driving a motor-frame. As an example a 7-mm-scanner is presented that achieves an optical scan angle of 32 degrees at 3.2 kHz. LAMM-scanners with apertures sizes of 20 mm are designed as passive high-Q-resonators to be externally excited by low-cost electromagnetic or piezoelectric drives. Multi-layer dielectric coatings with a reflectivity higher than 99.9 % have enabled to apply cw-laser power loads of more than 600 W without damaging the MEMS mirror. Finally, a new excitation concept for resonant scanners is presented providing advantageous shaping of intensity profiles of projected laser patterns without modulating the laser. This is of interest in lighting applications such as automotive laser headlights.

High-throughput machining using high average power ultrashort pulse lasers and ultrafast polygon scanner

Science.gov (United States)

Schille, Joerg; Schneider, Lutz; Streek, André; Kloetzer, Sascha; Loeschner, Udo

2016-03-01

In this paper, high-throughput ultrashort pulse laser machining is investigated on various industrial grade metals (Aluminium, Copper, Stainless steel) and Al2O3 ceramic at unprecedented processing speeds. This is achieved by using a high pulse repetition frequency picosecond laser with maximum average output power of 270 W in conjunction with a unique, in-house developed two-axis polygon scanner. Initially, different concepts of polygon scanners are engineered and tested to find out the optimal architecture for ultrafast and precision laser beam scanning. Remarkable 1,000 m/s scan speed is achieved on the substrate, and thanks to the resulting low pulse overlap, thermal accumulation and plasma absorption effects are avoided at up to 20 MHz pulse repetition frequencies. In order to identify optimum processing conditions for efficient high-average power laser machining, the depths of cavities produced under varied parameter settings are analyzed and, from the results obtained, the characteristic removal values are specified. The maximum removal rate is achieved as high as 27.8 mm3/min for Aluminium, 21.4 mm3/min for Copper, 15.3 mm3/min for Stainless steel and 129.1 mm3/min for Al2O3 when full available laser power is irradiated at optimum pulse repetition frequency.

Low Power Consumption Laser for Next Generation Miniature Optical Spectrometers for Trace Gas Analysis

Science.gov (United States)

Forouhar, S.; Frez, C.; Franz, K. J.; Ksendzov, A.; Qiu, Y.; Soibel, K. A.; Chen, J.; Hosoda, T.; Kipshidze, G.; Shterengas, L.;

Wavelength switchable high-power diode-side-pumped rod Tm:YAG Laser around 2µm.

Science.gov (United States)

Wang, Caili; Du, Shifeng; Niu, Yanxiong; Wang, Zhichao; Zhang, Chao; Bian, Qi; Guo, Chuan; Xu, Jialin; Bo, Yong; Peng, Qinjun; Cui, Dafu; Zhang, Jingyuan; Lei, Wenqiang; Xu, Zuyan

2013-03-25

We report a high-power diode-side-pumped rod Tm:YAG laser operated at either 2.07 or 2.02 µm depending on the transmission of pumped output coupler. The laser yields 115W of continuous-wave output power at 2.07 µm with 5% output coupling, which is the highest output power for all solid-state 2.07 μm cw rod Tm:YAG laser reported so far. With an output coupler of 10% transmission, the center wavelength of the laser is switched to 2.02 μm with an output power of 77.1 W. This is the first observation of high-power wavelength switchable diode-side-pumped rod Tm:YAG laser around 2 µm.

Soft apertures to shape high-power laser beams

International Nuclear Information System (INIS)

Lukishova, S.G.; Pashinin, P.P.; Batygov, S.K.; Terentiev, B.M.

1989-01-01

Soft or apodized apertures with smooth decreasing from center to edges transmission profiles are used in laser physics for beam shaping. This paper gives the results of the studies of four types of these units for UV, visible and IR lasers. They are made of glasses or crystals with the use of one of the following technologies: absorption induced by ionizing radiation; photodestruction of color centers or photooxidation of impurities ions; additive coloration; frustrated total internal reflection. The special feature of such apertures is their high optical damage resistance under the irradiation of single-pulse laser radiation. They are approximately 3-50 mm in diameter by the methods of making them give the possibility to create near-Gaussian and flat-top beams with dimensions less than 1 mm and larger than 200 mm. The results of using them in high-power single-pulse lasers are presented. Damage thresholds of these apertures in such types of lasers have been defined

Advanced laser architectures for high power eyesafe illuminators

Science.gov (United States)

Baranova, N.; Pati, B.; Stebbins, K.; Bystryak, I.; Rayno, M.; Ezzo, K.; DePriest, C.

2018-02-01

Q-Peak has demonstrated a novel pulsed eyesafe laser architecture operating with >50 mJ pulse energies at Pulse Repetition Frequencies (PRFs) as high as 320 Hz. The design leverages an Optical Parametric Oscillator (OPO) and Optical Parametric Amplifier (OPA) geometry, which provides the unique capability for high power in a comparatively compact package, while also offering the potential for additional eyesafe power scaling. The laser consists of a Commercial Off-the-Shelf (COTS) Q-switched front-end seed laser to produce pulse-widths around 10 ns at 1.06-μm, which is then followed by a pair of Multi-Pass Amplifier (MPA) architectures (comprised of side-pumped, multi-pass Nd:YAG slabs with a compact diode-pump-array imaging system), and finally involving two sequential nonlinear optical conversion architectures for transfer into the eyesafe regime. The initial seed beam is first amplified through the MPA, and then split into parallel optical paths. An OPO provides effective nonlinear conversion on one optical path, while a second MPA further amplifies the 1.06-μm beam for use in pumping an OPA on the second optical path. These paths are then recombined prior to seeding the OPA. Each nonlinear conversion subsystem utilizes Potassium Titanyl Arsenate (KTA) for effective nonlinear conversion with lower risk to optical damage. This laser architecture efficiently produces pulse energies of >50 mJ in the eyesafe band at PRFs as high as 320 Hz, and has been designed to fit within a volume of 4,500 in3 (0.074 m3 ). We will discuss theoretical and experimental details of the nonlinear optical system for achieving higher eyesafe powers.

Influence of temperature on the spectral characteristics of semiconductor lasers in the visible range

Science.gov (United States)

Adamov, A. A.; Baranov, M. S.; Khramov, V. N.

2018-04-01

The results of studies on the effect of temperature on the output spectral characteristics of continuous semiconductor lasers of the visible range are presented. The paper presents the results of studying the spectral-optical radiation parameters of semiconductor lasers, their coherence lengths, and the dependence of the position of the spectral peak of the wavelength on temperature. This is necessary for the selection of the most optimal laser in order to use it for medical ophthalmologic diagnosis. The experiment was carried out using semiconductor laser modules based on a laser diode. The spectra were recorded by using a two-channel automated spectral complex based on the MDR-23 monochromator. Spectral dependences on the temperature of semiconductor lasers are obtained, in the range from 300 to 370 K. The possibility of determining the internal damage to the stabilization of laser modules without opening the case is shown, but only with the use of their spectral characteristics. The obtained data allow taking into account temperature characteristics and further optimization of parameters of such lasers when used in medical practice, in particular, in ophthalmologic diagnostics.

Synchronization scenario of two distant mutually coupled semiconductor lasers

DEFF Research Database (Denmark)

Mulet, Josep; Mirasso, Claudio; Heil, Tilmann

2004-01-01

We present numerical and experimental investigations of the synchronization of the coupling-induced instabilities in two distant mutually coupled semiconductor lasers. In our experiments, two similar Fabry-Perot lasers are coupled via their coherent optical fields. Our theoretical framework is ba...

Physics of laser fusion. Volume IV. The future development of high-power solid-state laser systems

International Nuclear Information System (INIS)

Emmett, J.L.; Krupke, W.F.; Trenholme, J.B.

1982-11-01

Solid state lasers, particularly neodymium glass systems, have undergone intensive development during the last decade. In this paper, we review solid state laser technology in the context of high-peak-power systems for inertial confinement fusion. Specifically addressed are five major factors: efficiency, wavelength flexibility, average power, system complexity, and cost; these factors today limit broader application of the technology. We conclude that each of these factors can be greatly improved within current fundamental physical limits. We further conclude that the systematic development of new solid state laser madia, both vitreous and crystalline, should ultimately permit the development of wavelength-flexible, very high average power systems with overall efficiencies in the range of 10 to 20%

Wake fields in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1994-05-01

It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

All-metal coupling and package of semiconductor laser and amplifier with optical fiber

International Nuclear Information System (INIS)

Xu Fenglan; Li Lina; Zhang Yueqing

1992-01-01

The semiconductor laser and optical amplifier made by Changchun Institute of Physics coupled with optical fiber by use of all-metal coupling are represented. The net gain of semiconductor laser amplifier with optical fiber is 14 ∼18 dB

THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK

Directory of Open Access Journals (Sweden)

Remzi YILDIRIM

1998-01-01

Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

High power industrial picosecond laser from IR to UV

Science.gov (United States)

Saby, Julien; Sangla, Damien; Pierrot, Simonette; Deslandes, Pierre; Salin, François

2013-02-01

Many industrial applications such as glass cutting, ceramic micro-machining or photovoltaic processes require high average and high peak power Picosecond pulses. The main limitation for the expansion of the picosecond market is the cost of high power picosecond laser sources, which is due to the complexity of the architecture used for picosecond pulse amplification, and the difficulty to keep an excellent beam quality at high average power. Amplification with fibers is a good technology to achieve high power in picosecond regime but, because of its tight confinement over long distances, light undergoes dramatic non linearities while propagating in fibers. One way to avoid strong non linearities is to increase fiber's mode area. Nineteen missing holes fibers offering core diameter larger than 80μm have been used over the past few years [1-3] but it has been shown that mode instabilities occur at approximately 100W average output power in these fibers [4]. Recently a new fiber design has been introduced, in which HOMs are delocalized from the core to the clad, preventing from HOMs amplification [5]. In these so-called Large Pitch Fibers, threshold for mode instabilities is increased to 294W offering robust single-mode operation below this power level [6]. We have demonstrated a high power-high efficiency industrial picosecond source using single-mode Large Pitch rod-type fibers doped with Ytterbium. Large Pitch Rod type fibers can offer a unique combination of single-mode output with a very large mode area from 40 μm up to 100μm and very high gain. This enables to directly amplify a low power-low energy Mode Locked Fiber laser with a simple amplification architecture, achieving very high power together with singlemode output independent of power level or repetition rate.

A NASA high-power space-based laser research and applications program

Science.gov (United States)

Deyoung, R. J.; Walberg, G. D.; Conway, E. J.; Jones, L. W.

1983-01-01

Applications of high power lasers are discussed which might fulfill the needs of NASA missions, and the technology characteristics of laser research programs are outlined. The status of the NASA programs or lasers, laser receivers, and laser propulsion is discussed, and recommendations are presented for a proposed expanded NASA program in these areas. Program elements that are critical are discussed in detail.

Semiconductor light sources fabricated by vapor phase epitaxial regrowth

International Nuclear Information System (INIS)

Powazinik, W.; Olshansky, R.; Meland, E.; Lauer, R.B.

1986-01-01

An extremely versatile technique for the fabrication of semiconductor light sources is described. The technique which is based on the halide vapor phase regrowth (VPR) of InP on channeled and selectively etched InGaAsP/InP double heterostructure material, results in a buried heterostructure (BH) index-guided VPR-BH diode laser structure which can be optimized for a number of different types of semiconductor light sources. The conditions and parameters associated with the halide VPR process are given, and the properties of the regrown InP are reported. The processing and characterization of high-frequency lasers with 18-GHz bandwidths and high-power lasers with cw single-spatial-mode powers of 60 mW are described. Additionally, the fabrication and characterization of superluminescent LEDs based on the this basic VPR-BH structure are described. These LEDs are capable of coupling more than 80 μW of optical power into a single-mode fiber at 100 mA, and can couple as much as 8 μW of optical power into a single-mode fiber at drive currents as low as 20 mA

Thermal Investigation of Interaction between High-power CW-laser Radiation and a Water-jet

Science.gov (United States)

Brecher, Christian; Janssen, Henning; Eckert, Markus; Schmidt, Florian

The technology of a water guided laser beam has been industrially established for micro machining. Pulsed laser radiation is guided via a water jet (diameter: 25-250 μm) using total internal reflection. Due to the cylindrical jet shape the depth of field increases to above 50 mm, enabling parallel kerfs compared to conventional laser systems. However higher material thicknesses and macro geometries cannot be machined economically viable due to low average laser powers. Fraunhofer IPT has successfully combined a high-power continuous-wave (CW) fiber laser (6 kW) and water jet technology. The main challenge of guiding high-power laser radiation in water is the energy transferred to the jet by absorption, decreasing its stability. A model of laser water interaction in the water jet has been developed and validated experimentally. Based on the results an upscaling of system technology to 30 kW is discussed, enabling a high potential in cutting challenging materials at high qualities and high speeds.

Picosecond high power laser systems and picosecond diagnostic technique in laser produced plasma

International Nuclear Information System (INIS)

Kuroda, Hiroto; Masuko, H.; Maekawa, Shigeru; Suzuki, Yoshiji; Sugiyama, Masaru.

1979-01-01

Highly repetitive, high power YAG and Glass laser systems have been developed and been successfully used for the studies of laser-plasma interactions. Various picosecond diagnostic techniques have been developed for such purposes in the regions from optical to X-ray frequency. Recently highly sensitive X-ray (1 - 10 KeV) streak camera for highly repetitive operations have been developed. Preliminary experiment shows the achievement of 28ps temporal resolution (100μm slit) and good sensitivity with detectable minimum number of 10E3-1KeV photons/shot/slit area. (author)

MBE System for Antimonide Based Semiconductor Lasers

National Research Council Canada - National Science Library

Lester, Luke

1999-01-01

.... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

Emission parameters and thermal management of single high-power 980-nm laser diodes

International Nuclear Information System (INIS)

Bezotosnyi, V V; Krokhin, O N; Oleshchenko, V A; Pevtsov, V F; Popov, Yu M; Cheshev, E A

2014-01-01

We report emission parameters of high-power cw 980-nm laser diodes (LDs) with a stripe contact width of 100 μm. On copper heat sinks of the C-mount type, a reliable output power of 10 W is obtained at a pump current of 10 A. Using a heat flow model derived from analysis of calculated and measured overall efficiencies at pump currents up to 20 A, we examine the possibility of raising the reliable power limit of a modified high-power LD mounted on heat sinks of the F-mount type using submounts with optimised geometric parameters and high thermal conductivity. The possibility of increasing the maximum reliable cw output power to 20 W with the use of similar laser crystals is discussed. (lasers)

Analysis of High-Power Diode Laser Heating Effects on HY-80 Steel for Laser Assisted Friction Stir Welding Applications

Energy Technology Data Exchange (ETDEWEB)

Wiechec, Maxwell; Baker, Brad; McNelley, Terry; Matthews, Manyalibo; Rubenchik, Alexander; Rotter, Mark; Beach, Ray; Wu, Sheldon

2017-01-01

In this research, several conditions of high power diode laser heated HY-80 steel were characterized to determine the viability of using such lasers as a preheating source before friction stir welding in order to reduce frictional forces thereby reducing tool wear and increasing welding speeds. Differences in microstructures within heat affected zones were identified at specific laser powers and traverse speeds. Vickers hardness values were recorded and analyzed to validate the formation of additional martensite in diode laser heated regions of HY-80 steel. Conditions that produced little to no additional martensite were identified and relationships among high power diode laser power, traverse speed, and martensite formation were determined. The development of heat affected zones, change in grain structure, and creation of additional martensite in HY-80 can be prevented through the optimization of laser amperage and transverse speed.

High Intensity Laser Power Beaming Architecture for Space and Terrestrial Missions

Science.gov (United States)

Nayfeh, Taysir; Fast, Brian; Raible, Daniel; Dinca, Dragos; Tollis, Nick; Jalics, Andrew

2011-01-01

High Intensity Laser Power Beaming (HILPB) has been developed as a technique to achieve Wireless Power Transmission (WPT) for both space and terrestrial applications. In this paper, the system architecture and hardware results for a terrestrial application of HILPB are presented. These results demonstrate continuous conversion of high intensity optical energy at near-IR wavelengths directly to electrical energy at output power levels as high as 6.24 W from the single cell 0.8 cm2 aperture receiver. These results are scalable, and may be realized by implementing receiver arraying and utilizing higher power source lasers. This type of system would enable long range optical refueling of electric platforms, such as MUAV s, airships, robotic exploration missions and provide power to spacecraft platforms which may utilize it to drive electric means of propulsion.

Design of high power solid-state pulsed laser resonators

International Nuclear Information System (INIS)

Narro, R.; Ponce, L.; Arronte, M.

2009-01-01

Methods and configurations for the design of high power solid-state pulsed laser resonators, operating in free running, are presented. For fundamental mode high power resonators, a method is proposed for the design of a resonator with joined stability zones. In the case of multimode resonators, two configurations are introduced for maximizing the laser overall efficiency due to the compensation of the astigmatism induced by the excitation. The first configuration consists in a triangular ring resonator. The results for this configuration are discussed theoretically, showing that it is possible to compensate the astigmatism of the thermal lens virtually in a 100%; however this is only possible for a specific pumping power. The second configuration proposes a dual-active medium resonator, rotated 90 degree one from the other around the optical axis, where each active medium acts as an astigmatic lens of the same dioptric power. The reliability of this configuration is corroborated experimentally using a Nd:YAG dual-active medium resonator. It is found that in the pumping power range where the astigmatism compensation is possible, the overall efficiency is constant, even when increasing the excitation power with the consequent increase of the thermal lens dioptric power. (Author)

Fundamentals and industrial applications of high power laser beam cladding

International Nuclear Information System (INIS)

Bruck, G.J.

1988-01-01

Laser beam cladding has been refined such that clad characteristics are precisely determined through routine process control. This paper reviews the state of the art of laser cladding optical equipment, as well as the fundamental process/clad relationships that have been developed for high power processing. Major categories of industrial laser cladding are described with examples chose to highlight particular process attributes

High-Power, Solid-State, Deep Ultraviolet Laser Generation

Directory of Open Access Journals (Sweden)

Hongwen Xuan

2018-02-01

Full Text Available At present, deep ultraviolet (DUV lasers at the wavelength of fourth harmonics of 1 μm (266 nm/258 nm and at the wavelength of 193 nm are widely utilized in science and industry. We review the generation of these DUV lasers by nonlinear frequency conversion processes using solid-state/fiber lasers as the fundamental frequency. A DUV laser at 258 nm by fourth harmonics generation (FHG could achieve an average power of 10 W with a beam quality of M2 < 1.5. Moreover, 1 W of average power at 193 nm was obtained by sum-frequency generation (SFG. A new concept of 193-nm DUV laser generation by use of the diamond Raman laser is also introduced. A proof-of-principle experiment of the diamond Raman laser is reported with the conversion efficiency of 23% from the pump to the second Stokes wavelength, which implies the potential to generate a higher power 193 nm DUV laser in the future.

193nm high power lasers for the wide bandgap material processing

Science.gov (United States)

Fujimoto, Junichi; Kobayashi, Masakazu; Kakizaki, Koji; Oizumi, Hiroaki; Mimura, Toshio; Matsunaga, Takashi; Mizoguchi, Hakaru

2017-02-01

Recently infrared laser has faced resolution limit of finer micromachining requirement on especially semiconductor packaging like Fan-Out Wafer Level Package (FO-WLP) and Through Glass Via hole (TGV) which are hard to process with less defect. In this study, we investigated ablation rate with deep ultra violet excimer laser to explore its possibilities of micromachining on organic and glass interposers. These results were observed with a laser microscopy and Scanning Electron Microscope (SEM). As the ablation rates of both materials were quite affordable value, excimer laser is expected to be put in practical use for mass production.

Neuroscience imaging enabled by new highly tunable and high peak power femtosecond lasers

Science.gov (United States)

Hakulinen, T.; Klein, J.

2017-02-01

Neuroscience applications benefit from recent developments in industrial femtosecond laser technology. New laser sources provide several megawatts of peak power at wavelength of 1040 nm, which enables simultaneous optogenetics photoactivation of tens or even hundreds of neurons using red shifted opsins. Another recent imaging trend is to move towards longer wavelengths, which would enable access to deeper layers of tissue due to lower scattering and lower absorption in the tissue. Femtosecond lasers pumping a non-collinear optical parametric amplifier (NOPA) enable the access to longer wavelengths with high peak powers. High peak powers of >10 MW at 1300 nm and 1700 nm allow effective 3-photon excitation of green and red shifted calcium indicators respectively and access to deeper, sub-cortex layers of the brain. Early results include in vivo detection of spontaneous activity in hippocampus within an intact mouse brain, where neurons express GCaMP6 activated in a 3-photon process at 1320 nm.

Technology of discharge and laser resonators for high power CO2 lasers. Koshutsuryoku CO2 laser ni tsukawareru hoden reiki laser kyoshinki gijutsu

Energy Technology Data Exchange (ETDEWEB)

Takenaka, Y.; Kuzumoto, M. (Mitsubishi Electric Corp., Tokyo (Japan))

1994-03-20

This paper describes discharge excitation technology and resonator technology as basic technologies for high power CO2 lasers. As a result of progress in high-frequency power element techniques, the discharge excitation technology now generally uses laser excitation using AC discharge of capacity coupling type. Its representative example is silent discharge (SD) excitation. This is a system to excite laser by applying high voltages with as high frequency as 100 kHz to 1 MHz across a pair of electrodes covered with a dielectric material. The system maintains stability in discharge even if power supply voltage amplitude is modulated, and easily provides pulse outputs. Discharge excitation for diffusion cooled type CO2 laser generates a discharge in a gap with a gap length of about 2 mm, and can perform gas cooling by means of thermal conduction of gas, whereas a compact resonator can be fabricated. A resonator for the diffusion cooled type CO2 laser eliminates gas circulation and cooling systems, hence the device can be made more compact. A report has been given that several of these compact resonators were combined, from which a laser output of 85W was obtained by using RF discharge of 2kW. 43 refs., 21 figs.

Working Group VI Summary Report: New Ideas Employing High-Power Lasers

International Nuclear Information System (INIS)

Leemans, W.P.

1999-01-01

The objectives of this working group were to provide the ''Future Light Source Community'' information on: Electron-Laser interaction based sources; Plasma based radiation sources and accelerators; and Present and future high-power laser technology. A summary of presentations, discussions and opinions is presented next. At the end of this report, a few references are given. The list is very far from being complete but is meant as a start for further exploring the various topics discussed in this working group. Based on presentations and discussions during the workshop, a summarizing table of the performance of three different types of laser systems has been made. The emphasis is on listing performance parameters of solid state, FEL and gas based lasers, relevant to the development of a future fourth generation light source. Two types of solid state lasers capable of producing peak power in the multi-terawatt range are described: Nd:glass and Ti:sapphire lasers [1]. The main development for these lasers is towards higher average power levels: from the 10 W to the > 100 W level. An infrared FEL has recently produced 1 kW average power but with peak power on the order of 0.1 GW [2]. A terawatt class, short pulse CO 2 based gas laser is under development at the Advanced Test Facility at BNL [3

The Beam Characteristics of High Power Diode Laser Stack

Science.gov (United States)

Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

2018-03-01

Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

High power diode pumped solid state lasers

International Nuclear Information System (INIS)

Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

1992-01-01

Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

Fiber-distributed feedback lasers for high-speed wavelength-division multiplexed networks

DEFF Research Database (Denmark)

Sejka, Milan; Hübner, Jörg; Varming, Poul

1996-01-01

Summary form only given. In conclusion, we have demonstrated that fiber DFB lasers constitute an excellent alternative to commercially available semiconductor DFB lasers. We have also shown that two fiber DFB lasers can be spliced together without any BER power penalty. Therefore, we suggest...... the possibility of using a single pump source for pumping a WDM laser array consisting of a number of fiber lasers spliced in series....

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)