Power saving regulated light emitting diode circuit

International Nuclear Information System (INIS)

Haville, G. D.

1985-01-01

A power saving regulated light source circuit, comprising a light emitting diode (LED), a direct current source and a switching transistor connected in series with the LED, a control voltage producing resistor connected in series with the LED to produce a control voltage corresponding to the current through the LED, a storage capacitor connected in parallel with the series combination of the LED and the resistor, a comparator having its output connected to the input of the transistor, the comparator having a reference input and a control input, a stabilized biasing source for supplying a stabilized reference voltage to the reference input, the control input of the comparator being connected to the control voltage producing resistor, the comparator having a high output state when the reference voltage exceeds the control voltage while having a low output state when the control voltage exceeds the reference voltage, the transistor being conductive in response to the high state while being nonconductive in response to the low state, the transistor when conductive being effective to charge the capacitor and to increase the control voltage, whereby the comparator is cycled between the high and low output states while the transistor is cycled between conductive and nonconductive states

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Chiao-Wen Yeh

2010-03-01

Full Text Available White light-emitting diodes (WLEDs have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV LEDs and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED or polymer light-emitting diode (PLED, have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450-480 nm and nUV (380-400 nm LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+ is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Science.gov (United States)

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Irradiation Pattern Analysis for Designing Light Sources-Based on Light Emitting Diodes

International Nuclear Information System (INIS)

Rojas, E.; Stolik, S.; La Rosa, J. de; Valor, A.

2016-01-01

Nowadays it is possible to design light sources with a specific irradiation pattern for many applications. Light Emitting Diodes present features like high luminous efficiency, durability, reliability, flexibility, among others as the result of its rapid development. In this paper the analysis of the irradiation pattern of the light emitting diodes is presented. The approximation of these irradiation patterns to both, a Lambertian, as well as a Gaussian functions for the design of light sources is proposed. Finally, the obtained results and the functionality of bringing the irradiation pattern of the light emitting diodes to these functions are discussed. (Author)

Organic light emitting diode with light extracting electrode

Energy Technology Data Exchange (ETDEWEB)

Bhandari, Abhinav; Buhay, Harry

2017-04-18

An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

Light emitting diodes for today's energy conscious world

Energy Technology Data Exchange (ETDEWEB)

Papanier, J

2000-10-01

The role played by light emitting diodes in back lighting, decorative illumination, emergency lighting, and automated signage are described as indicators of the many benefits and advantages of LED technology. The basic principles underlying the functioning of LEDs are explained, including the reasons behind their high efficiency in applications requiring colour. The difference between wattage and lumens is clarified; wattage refers to power consumption, whereas lumens measure brightness or light output, the measure most significant in the case of LEDs.

High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy

International Nuclear Information System (INIS)

Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

2006-01-01

In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350 nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN/AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN/AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800x800 μm 2 ) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340 nm, the measured differential on-series resistance is 3 Ω with electroluminescence spectrum full width at half maximum of 18 nm. The output power under dc bias saturates at 0.5 mW, while under pulsed operation it saturates at approximately 700 mA to a value of 3 mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350 nm were investigated under dc operation and the output power saturates at 4.5 mW under 200 mA drive current

270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

Science.gov (United States)

Grandusky, James R.; Chen, Jianfeng; Gibb, Shawn R.; Mendrick, Mark C.; Moe, Craig G.; Rodak, Lee; Garrett, Gregory A.; Wraback, Michael; Schowalter, Leo J.

2013-03-01

In this letter, the achievement of over 60 mW output power from pseudomorphic ultraviolet light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.

High efficiency electrophosphorescence from bilayer organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Li Minghang; Lin, Ming-Te; Shepherd, Nigel D [Department of Material Science and Engineering, University of North Texas, Denton, TX (United States); Chen, Wei-Hsuan; Oswald, Iain; Omary, Mohammad [Department of Chemeistry, University of North Texas, Denton, TX (United States)

2011-09-14

An electron mobility of 2.7 x 10{sup -5} cm{sup 2} V{sup -1} s{sup -1} was measured for the phosphorescent emitter bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II)(Pt(ptp)2), which prompted its evaluation as both the emissive layer and electron transport layer in organic light emitting diodes with a simple bilayer structure. Power and external quantum efficiencies of 54.0 {+-} 0.2 lm W{sup -1} and 15.9% were obtained, which as far as we could ascertain are amongst the highest reported values for bilayer devices. We ascribe the high device efficiency to the combination of the high electron mobility, short excited-state lifetime (117 ns) and high luminescence quantum yield (60%) of the bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II). The colour temperature of the devices was 2855 K at 5 V, which places the emission in the 'warm' light spectral region.

Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

DEFF Research Database (Denmark)

Kopylov, Oleksii

This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non-radiative e......This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time......-resolved PL and electroluminescence (EL) together with current-voltage characteristics are presented to evaluate the device performance. A clear evidence of non-radiative energy transfer was seen in the carrier dynamics of both the LED and the nanocrystals when the quantum well – nanocrystals separation...

Degradation of light emitting diodes: a proposed methodology

International Nuclear Information System (INIS)

Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

2011-01-01

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-05-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-01-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

Improved power efficiency of blue fluorescent organic light-emitting diode with intermixed host structure

Energy Technology Data Exchange (ETDEWEB)

Yue, Shouzhen; Zhang, Shiming; Zhang, Zhensong; Wu, Yukun; Wang, Peng; Guo, Runda; Chen, Yu; Qu, Dalong; Wu, Qingyang; Zhao, Yi, E-mail: yizhao@jlu.edu.cn; Liu, Shiyong

2013-11-15

High power efficiency (PE) p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-ph) based fluorescent blue organic light-emitting diode (OLED) is demonstrated by utilizing intermixed host (IH) structure. The PE outperforms those devices based on single host (SH), mixed host (MH), and double emitting layers (DELs). By further optimizing the intermixed layer, peak PE of the IH device is increased up to 8.7 lm/W (1.7 times higher than conventional SH device), which is the highest value among the DSA-ph based blue device reported so far. -- Highlights: • DSA-ph based blue fluorescent OLEDs are fabricated. • The intermixed host structure is first introduced into the blue devices. • Blue device with the highest power efficiency based on DSA-ph is obtained.

Pyridine substituted spirofluorene derivative as an electron transport material for high efficiency in blue organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Jeon, Soon Ok; Yook, Kyoung Soo; Lee, Jun Yeob, E-mail: leej17@dankook.ac.k

2010-11-01

The quantum efficiency of blue fluorescent organic light-emitting diodes was enhanced by 20% using a pyridine substituted spirofluorene-benzofluorene derivative as an electron transport material. 2',7'-Di(pyridin-3-yl)spiro[benzofluorene-7,9'-fluorene] (SPBP) was synthesized and it was used as the electron transport material to block the hole leakage from the emitting layer. The improvement of the quantum efficiency and power efficiency of the blue fluorescent organic light-emitting diodes using the SPBP was investigated.

Perovskite Materials for Light-Emitting Diodes and Lasers.

Science.gov (United States)

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Note: An online testing method for lifetime projection of high power light-emitting diode under accelerated reliability test.

Science.gov (United States)

Chen, Qi; Chen, Quan; Luo, Xiaobing

2014-09-01

In recent years, due to the fast development of high power light-emitting diode (LED), its lifetime prediction and assessment have become a crucial issue. Although the in situ measurement has been widely used for reliability testing in laser diode community, it has not been applied commonly in LED community. In this paper, an online testing method for LED life projection under accelerated reliability test was proposed and the prototype was built. The optical parametric data were collected. The systematic error and the measuring uncertainty were calculated to be within 0.2% and within 2%, respectively. With this online testing method, experimental data can be acquired continuously and sufficient amount of data can be gathered. Thus, the projection fitting accuracy can be improved (r(2) = 0.954) and testing duration can be shortened.

The Light-Emitting Diode as a Light Detector

Science.gov (United States)

Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

2011-01-01

A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

The efficiency challenge of nitride light-emitting diodes for lighting

KAUST Repository

Weisbuch, Claude; Piccardo, Marco; Martinelli, Lucio; Iveland, Justin; Peretti, Jacques; Speck, James S.

2015-01-01

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. We discuss the challenges of light-emitting diodes in view of their application to solid-state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high

Broadband mid-infrared superlattice light-emitting diodes

Science.gov (United States)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

Evaluation of light-emitting diode beacon light fixtures.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

Science.gov (United States)

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

Energy Technology Data Exchange (ETDEWEB)

Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

2014-03-03

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

Micro-light-emitting-diode array with dual functions of visible light communication and illumination

International Nuclear Information System (INIS)

Huang Yong; Guo Zhi-You; Sun Hui-Qing; Huang Hong-Yong

2017-01-01

We demonstrate high-speed blue 4 × 4 micro-light-emitting-diode (LED) arrays with 14 light-emitting units (two light-emitting units are used as the positive and negative electrodes for power supply, respectively) comprising multiple quantum wells formed of GaN epitaxial layers grown on a sapphire substrate, and experimentally test their applicability for being used as VLC transmitters and illuminations. The micro-LED arrays provide a maximum −3-dB frequency response of 60.5 MHz with a smooth frequency curve from 1 MHz to 500 MHz for an optical output power of 165 mW at an injection current of 30 mA, which, to our knowledge, is the highest response frequency ever reported for blue GaN-based LEDs operating at that level of optical output power. The relationship between the frequency and size of the device single pixel diameter reveals the relationship between the response frequency and diffusion capacitance of the device. (paper)

Highly efficient and simplified phosphorescence white organic light-emitting diodes based on synthesized deep-blue host and orange emitter

Energy Technology Data Exchange (ETDEWEB)

Koo, Ja Ryong; Lee, Seok Jae; Hyung, Gun Woo; Kim, Bo Young; Lee, Dong Hyung [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Kim, Woo Young [Department of Green Energy and Semiconductor Engineering, Hoseo University, Asan 336-795 (Korea, Republic of); Lee, Kum Hee [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of)

2013-10-01

The authors have demonstrated a highly efficient and stable phosphorescent white organic light-emitting diode (WOLED), which has been achieved by doping only one orange phosphorescent emitter, Bis(5-benzoyl-2-(4-fluorophenyl)pyridinato-C,N)iridium(III) acetylacetonate into an appropriate deep blue phosphorescent host, 4,4'-bis(4-(triphenylsilyl)phenyl)-1,1'-binaphthyl as an emitting layer (EML). The WOLED has been achieved by effective confinement of triplet excitons to emit a warm white color. The optimized WOLED, with a simple structure as a hole transporting layer-EML-electron transporting layer, showed a maximum luminous efficiency of 22.38 cd/A, a maximum power efficiency of 12.01 lm/W, a maximum external quantum efficiency of 7.32%, and CIEx,y coordinates of (0.38,0.42) at 500 cd/m{sup 2}, respectively. - Highlights: • Highly efficient phosphorescent white organic light-emitting diode (WOLED) • Single emitting layer consists of synthesized deep blue host and orange emitter • The WOLED with high EL efficiencies due to efficient triplet exciton confinement.

High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

Science.gov (United States)

Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

2010-10-01

White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.

Science.gov (United States)

Lee, Han Eol; Choi, JeHyuk; Lee, Seung Hyun; Jeong, Minju; Shin, Jung Ho; Joe, Daniel J; Kim, DoHyun; Kim, Chang Wan; Park, Jung Hwan; Lee, Jae Hee; Kim, Daesoo; Shin, Chan-Soo; Lee, Keon Jae

2018-05-18

Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm -2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrically driven surface plasmon light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Investigation of phosphorescent blue organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Chiu, Chien-Shu [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Kowalsky, Wolfgang [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany)

2008-07-01

Recently, rapid development of phosphorescent materials has significantly improved the efficiency of organic light emitting diodes (OLEDs). By using efficient phosphorescent emitter materials white OLEDs with high power efficiency values could be demonstrated. But especially blue phosphorescent devices, due to stability issues, need to be further investigated und optimized. In this work, blue OLED devices based on the phosphorescent emitter FIrpic were investigated. Single-carrier hole-only as well as electron-only devices were fabricated and characterized to study the impact of charge carriers on device performance.

Sliding Mode Pulsed Averaging IC Drivers for High Brightness Light Emitting Diodes

Energy Technology Data Exchange (ETDEWEB)

Dr. Anatoly Shteynberg, PhD

2006-08-17

This project developed new Light Emitting Diode (LED) driver ICs associated with specific (uniquely operated) switching power supplies that optimize performance for High Brightness LEDs (HB-LEDs). The drivers utilize a digital control core with a newly developed nonlinear, hysteretic/sliding mode controller with mixed-signal processing. The drivers are flexible enough to allow both traditional microprocessor interface as well as other options such as “on the fly” adjustment of color and brightness. Some other unique features of the newly developed drivers include • AC Power Factor Correction; • High power efficiency; • Substantially fewer external components should be required, leading to substantial reduction of Bill of Materials (BOM). Thus, the LED drivers developed in this research : optimize LED performance by increasing power efficiency and power factor. Perhaps more remarkably, the LED drivers provide this improved performance at substantially reduced costs compared to the present LED power electronic driver circuits. Since one of the barriers to market penetration for HB-LEDs (in particular “white” light LEDs) is cost/lumen, this research makes important contributions in helping the advancement of SSL consumer acceptance and usage.

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

Science.gov (United States)

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High performance inkjet printed phosphorescent organic light emitting diodes based on small molecules commonly used in vacuum processes

Energy Technology Data Exchange (ETDEWEB)

Jung, Sung-Hoon [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Hyong-Jun, E-mail: hkim@kongju.ac.kr [Department of Chemical Engineering, Kongju National University, Cheonan, 330-717 (Korea, Republic of)

2012-09-30

High efficiency phosphorescent organic light emitting diodes (OLEDs) are realized by inkjet printing based on small molecules commonly used in vacuum processes in spite of the limitation of the limited solubility. The OLEDs used the inkjet printed 5 wt.% tris(2-phenylpyridine)iridium(III) (Ir(ppy){sub 3}) doped in 4,4 Prime -Bis(carbazol-9-yl)biphenyl (CBP) as the light emitting layer on various small molecule based hole transporting layers, which are widely used in the fabrication of OLEDs by vacuum processes. The OLEDs resulted in the high power and the external quantum efficiencies of 29.9 lm/W and 11.7%, respectively, by inkjet printing the CBP:Ir(ppy){sub 3} on a 40 nm thick 4,4 Prime ,4 Double-Prime -tris(carbazol-9-yl)triphenylamine layer. The performance was very close to a vacuum deposited device with a similar structure. - Highlights: Black-Right-Pointing-Pointer Effective inkjet printed organic light emitting diode (OLED) technique is explored. Black-Right-Pointing-Pointer Solution process on commonly used hole transporting material (HTM) is demonstrated. Black-Right-Pointing-Pointer Triplet energy overlap of HTM and emitting material is the key to the performance. Black-Right-Pointing-Pointer Simple inkjet printed OLED provides the high current efficiency of 40 cd/A.

Color-converted remote phosphor prototype of a multiwavelength excitable borosilicate glass for white light-emitting diodes

International Nuclear Information System (INIS)

Tian Hua; Qiu Kun; Song Jun; Wang Da-Jian; Liu Ji-Wen

2012-01-01

We report a unique red light-emitting Eu-doped borosilicate glass to convert color for warm white light-emitting diodes. This glass can be excited from 394 nm-peaked near ultraviolet light, 466 nm-peaked blue light, to 534 nm-peaked green light to emit the desired red light with an excellent transmission in the wavelength range of 400–700 nm which makes this glass suitable for color conversion without a great cost of luminous power loss. In particular, when assembling this glass for commercial white light-emitting diodes, the tested results show that the color rendering index is improved to 84 with a loss of luminous power by 12 percent at average, making this variety of glass promising for inorganic “remote-phosphor” color conversion

High-efficiency white organic light-emitting diodes using thermally activated delayed fluorescence

International Nuclear Information System (INIS)

Nishide, Jun-ichi; Hiraga, Yasuhide; Nakanotani, Hajime; Adachi, Chihaya

2014-01-01

White organic light-emitting diodes (WOLEDs) have attracted much attention recently, aimed for next-generation lighting sources because of their high potential to realize high electroluminescence efficiency, flexibility, and low-cost manufacture. Here, we demonstrate high-efficiency WOLED using red, green, and blue thermally activated delayed fluorescence materials as emissive dopants to generate white electroluminescence. The WOLED has a maximum external quantum efficiency of over 17% with Commission Internationale de l'Eclairage coordinates of (0.30, 0.38).

Organic light emitting diode with surface modification layer

Science.gov (United States)

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Energy Technology Data Exchange (ETDEWEB)

Inoue, Shin-ichiro, E-mail: s-inoue@nict.go.jp [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Naoki, Tamari [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan); Kinoshita, Toru; Obata, Toshiyuki; Yanagi, Hiroyuki [Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan)

2015-03-30

Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

KAUST Repository

Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Banavoth, Murali; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan; AlYami, Noktan; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N.; Mohammed, Omar F.; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman

2016-01-01

A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

KAUST Repository

Pan, Jun

2016-08-16

A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

Development and evaluation of a light-emitting diode endoscopic light source

Science.gov (United States)

Clancy, Neil T.; Li, Rui; Rogers, Kevin; Driscoll, Paul; Excel, Peter; Yandle, Ron; Hanna, George; Copner, Nigel; Elson, Daniel S.

2012-03-01

Light-emitting diode (LED) based endoscopic illumination devices have been shown to have several benefits over arclamp systems. LEDs are energy-efficient, small, durable, and inexpensive, however their use in endoscopy has been limited by the difficulty in efficiently coupling enough light into the endoscopic light cable. We have demonstrated a highly homogenised lightpipe LED light source that combines the light from four Luminus LEDs emitting in the red, green, blue and violet using innovative dichroics that maximise light throughput. The light source spectrally combines light from highly divergent incoherent sources that have a Lambertian intensity profile to provide illumination matched to the acceptance numerical aperture of a liquid light guide or fibre bundle. The LED light source was coupled to a standard laparoscope and performance parameters (power, luminance, colour temperature) compared to a xenon lamp. Although the total illuminance from the endoscope was lower, adjustment of the LEDs' relative intensities enabled contrast enhancement in biological tissue imaging. The LED light engine was also evaluated in a minimally invasive surgery (MIS) box trainer and in vivo during a porcine MIS procedure where it was used to generate 'narrowband' images. Future work using the violet LED could enable photodynamic diagnosis of bladder cancer.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

2012-01-01

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Science.gov (United States)

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Optimization of light quality from color mixing light-emitting diode systems for general lighting

DEFF Research Database (Denmark)

Thorseth, Anders

2012-01-01

are simulated using radiometrically measured single LED spectra. The method uses electrical input powers as input parameters and optimizes the resulting spectral power distribution with regard to color rendering index, correlated color temperature and chromaticity distance. The results indicate Pareto optimal......To address the problem of spectral light quality from color mixing light-emitting diode systems, a method for optimizing the spectral output of multicolor LED system with regards to standardized quality parameters has been developed. The composite spectral power distribution from the LEDs...

High power light emitting diode (LED) arrays versus halogen light polymerization of oral biomaterials: Barcol hardness, compressive strength and radiometric properties.

Science.gov (United States)

Mills, Robin W; Uhl, Alexander; Blackwell, Gordon B; Jandt, Klaus D

2002-07-01

The clinical performance of light polymerized dental composites is greatly influenced by the quality of the light curing unit (LCU) used. Commonly used halogen LCUs have some specific drawbacks such as decreasing light output with time. This may result in a low degree of monomer conversion of the composites with negative clinical implications. Previous studies have shown that blue light emitting diode (LED) LCUs have the potential to polymerize dental composites without having the drawbacks of halogen LCUs. Since these studies were carried out LED technology has advanced significantly and commercial LED LCUs are now becoming available. This study investigates the Barcol hardness as a function of depth, and the compressive strength of dental composites that had been polymerized for 40 or 20s with two high power LED LCU prototypes, a commercial LED LCU, and a commercial halogen LCU. In addition the radiometric properties of the LCUs were characterized. The two high power prototype LED LCUs and the halogen LCU showed a satisfactory and similar hardness-depth performance whereas the hardness of the materials polymerized with the commercial LED LCU rapidly decreased with sample depth and reduced polymerization time (20 s). There were statistically significant differences in the overall compressive strengths of composites polymerized with different LCUs at the 95% significance level (p = 0.0016) with the two high power LED LCU prototypes and the halogen LCU forming a statistically homogenous group. In conclusion, LED LCU polymerization technology can reach the performance level of halogen LCUs. One of the first commercial LED LCUs however lacked the power reserves of the high power LED LCU prototypes.

High tunability and superluminescence in InAs mid-infrared light emitting diodes

International Nuclear Information System (INIS)

Sherstnev, V.V.; Krier, A.; Hill, G.

2002-01-01

We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

Highly efficient exciplex organic light-emitting diodes incorporating a heptazine derivative as an electron acceptor.

Science.gov (United States)

Li, Jie; Nomura, Hiroko; Miyazaki, Hiroshi; Adachi, Chihaya

2014-06-11

Highly efficient exciplex systems incorporating a heptazine derivative () as an electron acceptor and 1,3-di(9H-carbazol-9-yl)benzene () as an electron donor are developed. An organic light-emitting diode containing 8 wt% : as an emitting layer exhibits a maximum external quantum efficiency of 11.3%.

High efficient white organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Schmid, Guenter; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany)

2007-07-01

Due to the rapid progress in the last years the performance of organic light emitting diodes (OLEDs) has reached a level where general lighting presents a most interesting application target. We demonstrate, how the color coordinates of the emission spectrum can be adjusted using a combinatorial evaporation tool to lie on the desired black body curve representing cold and warm white, respectively. The evaluation includes phosphorescent and fluorescent dye approaches to optimize lifetime and efficiency, simultaneously. Detailed results are presented with respect to variation of layer thicknesses and dopant concentrations of each layer within the OLED stack. The most promising approach contains phosphorescent red and green dyes combined with a fluorescent blue one as blue phosphorescent dopants are not yet stable enough to achieve long lifetimes.

Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

Science.gov (United States)

Muramoto, Yoshihiko; Kimura, Masahiro; Nouda, Suguru

2014-06-01

Ultraviolet light-emitting diodes (UV-LEDs) have started replacing UV lamps. The power per LED of high-power LED products has reached 12 W (14 A), which is 100 times the values observed ten years ago. In addition, the cost of these high-power LEDs has been decreasing. In this study, we attempt to understand the technologies and potential of UV-LEDs.

Highly Efficient Visible Colloidal Lead-Halide Perovskite Nanocrystal Light-Emitting Diodes

Science.gov (United States)

Yan, Fei; Xing, Jun; Xing, Guichuan; Quan, Lina; Tan, Swee Tiam; Zhao, Jiaxin; Su, Rui; Zhang, Lulu; Chen, Shi; Zhao, Yawen; Huan, Alfred; Sargent, Edward H.; Xiong, Qihua; Demir, Hilmi Volkan

2018-05-01

Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application prospects in lighting, however, remain still uncertain due to a variety of shortcomings in device performance including their limited levels of luminous efficiency achievable thus far. Here we show high-efficiency PeLEDs based on colloidal perovskite nanocrystals (PeNCs) synthesized at room temperature possessing dominant first-order excitonic radiation (enabling a photoluminescence quantum yield of 71% in solid film), unlike in the case of bulk perovskites with slow electron-hole bimolecular radiative recombination (a second-order process). In these PeLEDs, by reaching charge balance in the recombination zone, we find that the Auger nonradiative recombination, with its significant role in emission quenching, is effectively suppressed in low driving current density range. In consequence, these devices reach a record high maximum external quantum efficiency of 12.9% reported to date and an unprecedentedly high power efficiency of 30.3 lm W-1 at luminance levels above 1000 cd m-2 as required for various applications. These findings suggest that, with feasible levels of device performance, the PeNCs hold great promise for their use in LED lighting and displays.

Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Shamirzaev, V. T., E-mail: tim@isp.nsc.ru; Gaisler, V. A. [Novosibirsk State Technical University (Russian Federation); Shamirzaev, T. S. [Russian Academy of Science, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)

2016-11-15

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensity but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.

A Single-Stage High-Power-Factor Light-Emitting Diode (LED Driver with Coupled Inductors for Streetlight Applications

Directory of Open Access Journals (Sweden)

Chun-An Cheng

2017-02-01

Full Text Available This paper presents and implements a single-stage high-power-factor light-emitting diode (LED driver with coupled inductors, suitable for streetlight applications. The presented LED driver integrates an interleaved buck-boost power factor correction (PFC converter with coupled inductors and a half-bridge-type series-resonant converter cascaded with a full-bridge rectifier into a single-stage power conversion circuit. Coupled inductors inside the interleaved buck-boost PFC converter sub-circuit are designed to operate in discontinuous conduction mode (DCM for achieving input-current shaping, and the half-bridge-type series resonant converter cascaded with a full-bridge rectifier is designed for obtaining zero-voltage switching (ZVS on two power switches to reduce their switching losses. Analysis of operational modes and design equations for the presented LED driver are described and included. In addition, the presented driver features a high power factor, low total harmonic distortion (THD of input current, and soft switching. Finally, a prototype driver is developed and implemented to supply a 165-W-rated LED streetlight module with utility-line input voltages ranging from 210 to 230 V. Experimental results demonstrate that high power factor (>0.99, low utility-line current THD (<7%, low-output voltage ripples (<1%, low-output current ripples (<10%, and high circuit efficiency (>90% are obtained in the presented single-stage driver for LED streetlight applications.

Efficient organic light emitting-diodes (OLEDs)

CERN Document Server

Chang, Yi-Lu

2015-01-01

Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

Printable candlelight-style organic light-emitting diode

Science.gov (United States)

Jou, J. H.; Singh, M.; Song, W. C.; Liu, S. H.

2017-06-01

Candles or oil lamps are currently the most friendly lighting source to human eyes, physiology, ecosystems, artifacts, environment, and night skies due to their blue light-less emission. Candle light also exhibits high light-quality that provides visual comfort. However, they are relatively low in power efficacy (0.3 lm/W), making them energy-wasting, besides having problems like scorching hot, burning, catching fire, flickering, carbon blacking, oxygen consuming, and release of green house gas etc. In contrast, candlelight organic light-emitting diode (OLED) can be made blue-hazard free and energy-efficient. The remaining challenges are to maximize its light-quality and enable printing feasibility, the latter of which would pave a way to cost-effective manufacturing. We hence demonstrate herein the design and fabrication of a candlelight OLED via wet-process. From retina protection perspective, its emission is 13, 12 and 8 times better than those of the blue-enriched white CFL, LED and OLED. If used at night, it is 9, 6 and 4 times better from melatonin generation perspective.

Evaluation of light-emitting diode beacon light fixtures : final report.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Polymer light emitting diodes

International Nuclear Information System (INIS)

Gautier-Thianche, Emmmanuelle

1998-01-01

We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

International Nuclear Information System (INIS)

Muramoto, Yoshihiko; Kimura, Masahiro; Nouda, Suguru

2014-01-01

Ultraviolet light-emitting diodes (UV-LEDs) have started replacing UV lamps. The power per LED of high-power LED products has reached 12 W (14 A), which is 100 times the values observed ten years ago. In addition, the cost of these high-power LEDs has been decreasing. In this study, we attempt to understand the technologies and potential of UV-LEDs. (invited article)

Recent developments in white light emitting diodes

Science.gov (United States)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

because they can emit visible light strongly under blue light irradiation. These are chemically, thermally and mechanically stable materials with high efficiency to down convert blue radiation into green and red. Efficient white light can be generated by coating these phosphors on blue LED.CRI of white emitting LED lamp can be improved significantly if green and red emitting phosphors are coated on efficient blue emitting LED chips. In this approach CRI will be maintained if appropriate combination of red, green along with blue emission is used. This article reviews some recent developments in phosphors for white light emitting diodes.

Thermal characterizations analysis of high-power ThinGaN cool-white light-emitting diodes

Science.gov (United States)

Raypah, Muna E.; Devarajan, Mutharasu; Ahmed, Anas A.; Sulaiman, Fauziah

2018-03-01

Analysis of thermal properties plays an important role in the thermal management of high-power (HP) lighting-emitting diodes (LEDs). Thermal resistance, thermal capacitance, and thermal time constant are essential parameters for the optimal design of the LED device and system, particularly for dynamic performance study. In this paper, thermal characterization and thermal time constant of ThinGaN HP LEDs are investigated. Three HP cool-white ThinGaN LEDs from different manufacturers are used in this study. A forward-voltage method using thermal transient tester (T3Ster) system is employed to determine the LEDs' thermal parameters at various operating conditions. The junction temperature transient response is described by a multi-exponential function model to extract thermal time constants. The transient response curve is divided into three layers and expressed by three exponential functions. Each layer is associated with a particular thermal time constant, thermal resistance, and thermal capacitance. It is found that the thermal time constant of LED package is on the order of 22 to 100 ms. Comparison between the experimental results is carried out to show the design effects on thermal performance of the LED package.

Quantum dot superluminescent light emitting diodes: Ideal blackbody radiators?

Energy Technology Data Exchange (ETDEWEB)

Blazek, Martin; Elsaesser, Wolfgang [Institute of Applied Physics, Darmstadt University of Technology (Germany); Hopkinson, Mark [Dept. E and E.E, University of Sheffield (United Kingdom); Krakowski, Michel [Alcatel Thales, III-V Lab. (France)

2008-07-01

Quantum dot (QD) superluminescent light emitting diodes (SLEDs) provide large optical bandwidths at desired wavelengths and are therefore promising devices for incoherent light application. The intensity noise behavior of QD SLEDs is of fundamental physical interest as it provides insight into the photon emission process. We performed high precision intensity noise measurements over several decades of optical output power. For low driving currents spontaneous emission leads to Shot Noise. For high currents we find excess noise behavior with Amplified Spontaneous Emission acting as the dominant source of noise. The QD SLEDs' noise can be described as blackbody radiation noise with a limited number of optical modes. It is therefore possible to identify the SLEDs' relevant intensity noise parameters.

Blue light emitting diodes for optical stimulation of quartz in retrospective dosimetry and dating

DEFF Research Database (Denmark)

Bøtter-Jensen, L.; Duller, G.A.T.; Murray, A.S.

1999-01-01

Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LE......, preliminary results from ramping the blue light power output with time are demonstrated. It is shown that this technique enables the separation of OSL components with differing stimulation rates.......Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LEDs...... (470 nm) gives order of magnitude greater rate of stimulation in quartz than that from conventional blue-green light filtered from a halogen lamp. A practical blue LED OSL configuration is described. From comparisons of OSL decay curves produced by green and blue light sources, and by examination...

White organic light-emitting diodes with fluorescent tube efficiency.

Science.gov (United States)

Reineke, Sebastian; Lindner, Frank; Schwartz, Gregor; Seidler, Nico; Walzer, Karsten; Lüssem, Björn; Leo, Karl

2009-05-14

The development of white organic light-emitting diodes (OLEDs) holds great promise for the production of highly efficient large-area light sources. High internal quantum efficiencies for the conversion of electrical energy to light have been realized. Nevertheless, the overall device power efficiencies are still considerably below the 60-70 lumens per watt of fluorescent tubes, which is the current benchmark for novel light sources. Although some reports about highly power-efficient white OLEDs exist, details about structure and the measurement conditions of these structures have not been fully disclosed: the highest power efficiency reported in the scientific literature is 44 lm W(-1) (ref. 7). Here we report an improved OLED structure which reaches fluorescent tube efficiency. By combining a carefully chosen emitter layer with high-refractive-index substrates, and using a periodic outcoupling structure, we achieve a device power efficiency of 90 lm W(-1) at 1,000 candelas per square metre. This efficiency has the potential to be raised to 124 lm W(-1) if the light outcoupling can be further improved. Besides approaching internal quantum efficiency values of one, we have also focused on reducing energetic and ohmic losses that occur during electron-photon conversion. We anticipate that our results will be a starting point for further research, leading to white OLEDs having efficiencies beyond 100 lm W(-1). This could make white-light OLEDs, with their soft area light and high colour-rendering qualities, the light sources of choice for the future.

Organic light emitting diodes with spin polarized electrodes

NARCIS (Netherlands)

Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

2003-01-01

Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of

Spin-polarized light-emitting diodes based on organic bipolar spin valves

Science.gov (United States)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

2017-10-25

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

Highly efficient deep-blue organic light emitting diode with a carbazole based fluorescent emitter

Science.gov (United States)

Sahoo, Snehasis; Dubey, Deepak Kumar; Singh, Meenu; Joseph, Vellaichamy; Thomas, K. R. Justin; Jou, Jwo-Huei

2018-04-01

High efficiency deep-blue emission is essential to realize energy-saving, high-quality display and lighting applications. We demonstrate here a deep-blue organic light emitting diode using a novel carbazole based fluorescent emitter 7-[4-(diphenylamino)phenyl]-9-(2-ethylhexyl)-9H-carbazole-2-carbonitrile (JV234). The solution processed resultant device shows a maximum luminance above 1,750 cd m-2 and CIE coordinates (0.15,0.06) with a 1.3 lm W-1 power efficiency, 2.0 cd A-1 current efficiency, and 4.1% external quantum efficiency at 100 cd m-2. The resulting deep-blue emission enables a greater than 100% color saturation. The high efficiency may be attributed to the effective host-to-guest energy transfer, suitable device architecture facilitating balanced carrier injection and low doping concentration preventing efficiency roll-off caused by concentration quenching.

Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

Science.gov (United States)

Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

2018-05-01

Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimization of light quality from color mixing light-emitting diode systems for general lighting

Science.gov (United States)

Thorseth, Anders

2012-03-01

Given the problem of metamerisms inherent in color mixing in light-emitting diode (LED) systems with more than three distinct colors, a method for optimizing the spectral output of multicolor LED system with regards to standardized light quality parameters has been developed. The composite spectral power distribution from the LEDs are simulated using spectral radiometric measurements of single commercially available LEDs for varying input power, to account for the efficiency droop and other non-linear effects in electrical power vs. light output. The method uses electrical input powers as input parameters in a randomized steepest decent optimization. The resulting spectral power distributions are evaluated with regard to the light quality using the standard characteristics: CIE color rendering index, correlated color temperature and chromaticity distance. The results indicate Pareto optimal boundaries for each system, mapping the capabilities of the simulated lighting systems with regard to the light quality characteristics.

Investigations of thin p-GaN light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Light emitting diodes as a plant lighting source

Energy Technology Data Exchange (ETDEWEB)

Bula, R.J.; Tennessen, D.J.; Morrow, R.C. [Wisconsin Center for Space Automation and Robotics, Madison, WI (United States); Tibbitts, T.W. [Univ. of Wisconsin, Madison, WI (United States)

1994-12-31

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used in a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.

Improvement in light-extraction efficiency of light emitting diode ...

Indian Academy of Sciences (India)

The effect of various microlens parameters such as diameter and area fraction on light-extraction efficiency was systematically studied. Improvement of 4% in extraction efficiency was obtained by employing it on white light emitting diode. The area fraction of microlenses was increased up to 0.34 by reducing the spin speed.

Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

CERN Document Server

Ohtsu, Motoichi

2016-01-01

This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

Novel recycle technology for recovering rare metals (Ga, In) from waste light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhan, Lu; Xia, Fafa; Ye, Qiuyu; Xiang, Xishu; Xie, Bing, E-mail: bxie@des.ecnu.edu.cn

2015-12-15

Highlights: • Rare metals (Ga, In) are separated and recycled from waste light-emitting diodes. • Pyrolysis, physical disaggregation and vacuum metallurgy separation are proposed. • There is no hazardous materials produced in this process. - Abstract: This work develops a novel process of recycling rare metals (Ga, In) from waste light-emitting diodes using the combination of pyrolysis, physical disaggregation methods and vacuum metallurgy separation. Firstly, the pure chips containing InGaN/GaN are adopted to study the vacuum separation behavior of rare metals, which aims to provide the theoretical foundation for recycling gallium and indium from waste light-emitting diodes. In order to extract the rare-metal-rich particles from waste light-emitting diodes, pyrolysis and physical disaggregation methods (crushing, screening, grinding and secondly screening) are studied respectively, and the operating parameters are optimized. With low boiling points and high saturation vapor pressures under vacuum, gallium and indium are separated from rare-metal-rich particles by the process of evaporation and condensation. By reference to the separating parameters of pure chips, gallium and indium in waste light-emitting diodes are recycled with the recovery efficiencies of 93.48% and 95.67% under the conditions as follows: heating temperature of 1373 K, vacuum pressure of 0.01–0.1 Pa, and holding time of 60 min. There are no secondary hazardous materials generated in the whole processes. This work provides an efficient and environmentally friendly process for recycling rare metals from waste light-emitting diodes.

Host-free, yellow phosphorescent material in white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lee, Meng-Ting; Chu, Miao-Tsai; Lin, Jin-Sheng; Tseng, Mei-Rurng, E-mail: osolomio.ac89g@nctu.edu.t [Material and Chemical Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan 310 (China)

2010-11-10

A white organic light-emitting diode (WOLED) with a high power efficiency has been demonstrated by dispersing a host-free, yellow phosphorescent material in between double blue phosphorescent emitters. The device performance achieved a comparable value to that of using a complicated host-guest doping system to form the yellow emitter in WOLEDs. Based on this device concept as well as the molecular engineering of blue phosphorescent host material and light-extraction film, a WOLED with a power efficiency of 65 lm W{sup -1} at a practical brightness of 1000 cd m{sup -2} with Commission Internationale d'Echariage coordinates (CIE{sub x,y}) of (0.37, 0.47) was achieved. (fast track communication)

Weak-microcavity organic light-emitting diodes with improved light out-coupling.

Science.gov (United States)

Cho, Sang-Hwan; Song, Young-Woo; Lee, Joon-gu; Kim, Yoon-Chang; Lee, Jong Hyuk; Ha, Jaeheung; Oh, Jong-Suk; Lee, So Young; Lee, Sun Young; Hwang, Kyu Hwan; Zang, Dong-Sik; Lee, Yong-Hee

2008-08-18

We propose and demonstrate weak-microcavity organic light-emitting diode (OLED) displays with improved light-extraction and viewing-angle characteristics. A single pair of low- and high-index layers is inserted between indium tin oxide (ITO) and a glass substrate. The electroluminescent (EL) efficiencies of discrete red, green, and blue weak-microcavity OLEDs are enhanced by 56%, 107%, and 26%, respectively, with improved color purity. Moreover, full-color passive-matrix bottom-emitting OLED displays are fabricated by employing low-index layers of two thicknesses. As a display, the EL efficiency of white color was 27% higher than that of a conventional OLED display.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

2015-01-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang

2015-03-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu; Voznyy, Oleksandr; Liu, Mengxia; Yuan, Mingjian; Ip, Alexander H.; Ahmed, Osman S.; Levina, Larissa; Kinge, Sachin; Hoogland, Sjoerd; Sargent, Edward H.

2015-01-01

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport

Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

KAUST Repository

Zhao, Chao

2016-07-28

A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley–Read–Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.

Formulating CdSe quantum dots for white light-emitting diodes with high color rendering index

International Nuclear Information System (INIS)

Li, Fei; Li, Wan-Nan; Fu, Shao-Yun; Xiao, Hong-Mei

2015-01-01

Generation of white light using CdSe quantum dots (QDs) alone presents exciting possibilities for solid state lighting technology. In this work, Cd(Ac) 2 ·2H 2 O and Na 2 SeSO 3 are used as precursors to synthesize CdSe-QDs with an average diameter ranging from 2.77 to 4.65 nm at the low temperature from 60 to 180 °C. Smaller CdSe-QDs with an average diameter of 2.29 nm are got by an oxidation etching process using H 2 O 2 as oxidant. The structural and optical properties of these QDs are investigated and proper formulation of CdSe QDs with various sizes is carefully designed to achieve white light with a high color rendering index (CRI). It is observed for the first time that the as-prepared white light-emitting diodes from single CdSe-QDs show the Commission Inernationale del’Eclairage coordinate (CIE) of (0.30,0.34) very close to that (0.33,0.33) of pure white light and a high CRI of 84. Owing to these advantages, the as-prepared white light-emitting diodes from a single compound are promising for lighting applications. - Highlights: • CdSe-quantum dots (QDs) with a continuously changing size from 2.31 to 4.74 nm are prepared. • The obtained CdSe-QDs emit lights with tunable colors in the whole visible range. • The obtained mixture sample generates white light with a high color rendering index of 84. • The sample yields white light with the CIE coordinate (0.30, 0.34) very close to that of pure white light

High power cascade diode lasers emitting near 2 μm

Energy Technology Data Exchange (ETDEWEB)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

Compact light-emitting diode lighting ring for video-assisted thoracic surgery.

Science.gov (United States)

Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

2014-01-01

In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

Compact light-emitting diode lighting ring for video-assisted thoracic surgery

Science.gov (United States)

Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

2014-10-01

In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

Highly efficient exciplex organic light-emitting diodes using thermally activated delayed fluorescent emitters as donor and acceptor materials

Science.gov (United States)

Jeon, Sang Kyu; Yook, Kyoung Soo; Lee, Jun Yeob

2016-06-01

Highly efficient exciplex type organic light-emitting diodes were developed using thermally activated delayed fluorescent emitters as donors and acceptors of an exciplex. Blue emitting bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS) was a donor and 9,9‧-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole) (DDCzTrz) and 9,9‧,9″-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(9H-carbazole) (TCzTrz) were acceptor materials. The exciplexes of DMAC-DPS:TCzTrz and DMAC-DPS:DDCzTrz resulted in high photoluminescence quantum yield and high quantum efficiency in the green exciplex organic light-emitting diodes. High quantum efficiencies of 13.4% and 15.3% were obtained in the DMAC-DPS:DDCzTrz and DMAC-DPS:TCzTrz exciplex devices.

Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

International Nuclear Information System (INIS)

Cho, Joong-yeon; Park, Sang-Jun; Ahn, Jinho; Lee, Heon

2014-01-01

In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%

Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Cho, Joong-yeon; Park, Sang-Jun [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Material Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Heon, E-mail: heonlee@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2014-11-03

In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%.

Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

Science.gov (United States)

Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.; Luther, Joseph M.; Lin, Lih Y.

2017-11-01

Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot (QD) light-emitting diode (LED) with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21% at a bias of 6 V and outstanding operational stability, with a L 70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under a constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 QDs for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.

Color Shift Modeling of Light-Emitting Diode Lamps in Step-Loaded Stress Testing

NARCIS (Netherlands)

Cai, Miao; Yang, Daoguo; Huang, J.; Zhang, Maofen; Chen, Xianping; Liang, Caihang; Koh, S.W.; Zhang, G.Q.

2017-01-01

The color coordinate shift of light-emitting diode (LED) lamps is investigated by running three stress-loaded testing methods, namely step-up stress accelerated degradation testing, step-down stress accelerated degradation testing, and constant stress accelerated degradation testing. A power

Improvement in light-extraction efficiency of light emitting diode ...

Indian Academy of Sciences (India)

2018-02-02

Feb 2, 2018 ... emitting diode (OLED) can be enhanced by using light- extraction ... to grow, ω should posses a positive value, which is possible only when ∂φ/∂h < 0, .... To detect small changes, first, the source LED was sta- bilized by ...

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

Science.gov (United States)

Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

2015-12-01

Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

The influence of melt purification and structure defects on mid-infrared light emitting diodes

CERN Document Server

Krier, A

2003-01-01

Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mu m and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH sub 4 absorption spectrum and potentially could form the basis of a practical infrared CH sub 4 gas sensor.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

Science.gov (United States)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

Towards developing a tandem of organic solar cell and light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Singh, Jai [School of Engineering and IT, B-purple-12, Faculty of EHS, Charles Darwin University, Darwin, NT 0909 (Australia)

2011-01-15

It is proposed here to design a tandem of organic solar cell (OSC) and white organic light emitting diode (WOLED) which can generate power in the day time from the sun and provide lighting at night. With the advancement of chemical technology, such device is expected to be very-cost effective and reasonably efficient. A device thus fabricated has the potential of meeting the world's sustainable domestic and commercial power and lighting needs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Determination of illuminants representing typical white light emitting diodes sources

DEFF Research Database (Denmark)

Jost, S.; Ngo, M.; Ferrero, A.

2017-01-01

is to develop LED-based illuminants that describe typical white LED products based on their Spectral Power Distributions (SPDs). Some of these new illuminants will be recommended in the update of the CIE publication 15 on colorimetry with the other typical illuminants, and among them, some could be used......Solid-state lighting (SSL) products are already in use by consumers and are rapidly gaining the lighting market. Especially, white Light Emitting Diode (LED) sources are replacing banned incandescent lamps and other lighting technologies in most general lighting applications. The aim of this work...... to complement the CIE standard illuminant A for calibration use in photometry....

High-efficiency orange and tandem white organic light-emitting diodes using phosphorescent dyes with horizontally oriented emitting dipoles.

Science.gov (United States)

Lee, Sunghun; Shin, Hyun; Kim, Jang-Joo

2014-09-03

Tandem white organic light-emitting diodes (WOLEDs) using horizontally oriented phosphorescent dyes in an exciplex-forming co-host are presented, along with an orange OLED. A high external quantum efficiency of 32% is achieved for the orange OLED at 1000 cd m(-2) and the tandem WOLEDs exhibit a high maximum EQE of 54.3% (PE of 63 lm W(-1)). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light-emitting diodes - Their potential in biomedical applications

Energy Technology Data Exchange (ETDEWEB)

Yeh, Naichia Gary; Wu, Chia-Hao [College of Applied Sciences, MingDao University, 369 Wen-Hua Road, Peetou, Changhua 52345 (China); Cheng, Ta Chih [Department of Tropical Agriculture and International Cooperation, National Pingtung University of Science and Technology, 1 Hseuh-Fu Rd., Nei-Pu Hsiang, Pingtung 91201 (China)

2010-10-15

The rapid development of high brightness light-emitting diodes (LEDs) makes feasible the use of LEDs, among other light sources (such as laser, intense pulse light and other incoherent light systems), for medical treatment and light therapy. This paper provides a general review on red, green, blue, ultraviolet LED applications in photo rejuvenation and medical treatments of a variety of physical abnormalities, as well as the relief of stress, circadian rhythm disorders, and seasonal affective disorder. The review, concentrated in the papers published after 1990, intends to show that LEDs are well qualified to succeed its more energy demanding counterparts in the named areas and beyond. (author)

Evaluation of inorganic and organic light-emitting diode displays for signage application

Science.gov (United States)

Sharma, Pratibha; Kwok, Harry

2006-08-01

High-brightness, inorganic light-emitting diodes (LEDs) have been successfully utilized for edge-lighting of large displays for signage. Further interest in solid-state lighting technology has been fueled with the emergence of small molecule and polymer-based organic light-emitting diodes (OLEDs). In this paper, edgelit inorganic LED-based displays and state-of-the-art OLED-based displays are evaluated on the basis of electrical and photometric measurements. The reference size for a signage system is assumed to be 600 mm x 600mm based on the industrial usage. With the availability of high power light-emitting diodes, it is possible to develop edgelit signage systems of the standard size. These displays possess an efficacy of 18 lm/W. Although, these displays are environmentally friendly and efficient, they suffer from some inherent limitations. Homogeneity of displays, which is a prime requirement for illuminated signs, is not accomplished. A standard deviation of 3.12 lux is observed between the illuminance values on the surface of the display. In order to distribute light effectively, reflective gratings are employed. Reflective gratings aid in reducing the problem but fail to eliminate it. In addition, the overall cost of signage is increased by 50% with the use of these additional components. This problem can be overcome by the use of a distributed source of light. Hence, the organic-LEDs are considered as a possible contender. In this paper, we experimentally determine the feasibility of using OLEDs for signage applications and compare their performance with inorganic LEDs. Passive matrix, small-molecule based, commercially available OLEDs is used. Design techniques for implementation of displays using organic LEDs are also discussed. It is determined that tiled displays based on organic LEDs possess better uniformity than the inorganic LED-based displays. However, the currently available OLEDs have lower light-conversion efficiency and higher costs than the

Characteristics of organic light emitting diodes with copper iodide as injection layer

Energy Technology Data Exchange (ETDEWEB)

Stakhira, P., E-mail: stakhira@polynet.lviv.u [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Cherpak, V.; Volynyuk, D.; Ivastchyshyn, F. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Hotra, Z. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Rzeszow University of Technology, W. Pola 2, Rzeszow, 35-959 (Poland); Tataryn, V. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Luka, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2010-09-30

We have studied the use of a thin copper iodide (CuI) film as an efficient injection layer of holes from indium tin oxide (ITO) anode in a light-emitting diode structure based on tris-8-hydroxyquinoline aluminium (Alq3). The results of impedance analysis of two types of diode structures, ITO/CuI/Alq3/poly(ethylene glycol) dimethyl ether/Al and ITO/Alq3/poly(ethylene glycol) dimethyl ether/Al, are presented. Comparative analysis of their current density-voltage, luminance-voltage and impedance characteristics shows that presence of CuI layer facilitates injection of holes from ITO anode into the light-emitting layer Alq3 and increases electroluminescence efficiency of the organic light emitting diodes.

High power diode lasers emitting from 639 nm to 690 nm

Science.gov (United States)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

White organic light emitting diodes based on fluorene-carbazole dendrimers

International Nuclear Information System (INIS)

Usluer, Özlem; Demic, Serafettin; Kus, Mahmut; Özel, Faruk; Serdar Sariciftci, Niyazi

2014-01-01

In this paper, we report on theProd. Type: FTP fabrication and characterization of blue and white light emitting devices based on two fluorene-carbazole containing dendrimers and para-sexiphenyl (6P) oligomers. Blue light emitting diodes were fabricated using 9′,9″-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (OFC-G2) and 9′,9″-(9,9′-spirobi[fluorene]-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (SBFC-G2) dendrimers as a hole transport and emissive layer (EML) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as an electron transport layer. White light emitting diodes were fabricated using 6P and these two dendrimers as an EML. OLED device with the structure of ITO/PEDOT:PSS (50 nm)/OFC-G2 (40 nm)/6P (20 nm)/LiF:Al (0.5:100 nm) shows maximum luminance of nearly 1400 cd/m 2 and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.30) at 12 V. -- Highlights: • White organic light emitting diodes have been fabricated using two fluorene-carbazole dendrimers and para-sexiphenyl (6P) oligomers. • When only these two dendrimers are used as EML, OLED devices are emitted blue light. • The emission colors of OLED devices change from blue to white when 6P is coated on dendrimer films

Ultraviolet light-emitting diodes in water disinfection.

Science.gov (United States)

Vilhunen, Sari; Särkkä, Heikki; Sillanpää, Mika

2009-06-01

The novel system of ultraviolet light-emitting diodes (UV LEDs) was studied in water disinfection. Conventional UV lamps, like mercury vapor lamp, consume much energy and are considered to be problem waste after use. UV LEDs are energy efficient and free of toxicants. This study showed the suitability of LEDs in disinfection and provided information of the effect of two emitted wavelengths and different test mediums to Escherichia coli destruction. Common laboratory strain of E. coli (K12) was used and the effects of two emitted wavelengths (269 and 276 nm) were investigated with two photolytic batch reactors both including ten LEDs. The effects of test medium were examined with ultrapure water, nutrient and water, and nutrient and water with humic acids. Efficiency of reactors was almost the same even though the one emitting higher wavelength had doubled optical power compared to the other. Therefore, the effect of wavelength was evident and the radiation emitted at 269 nm was more powerful. Also, the impact of background was studied and noticed to have only slight deteriorating effect. In the 5-min experiment, the bacterial reduction of three to four log colony-forming units (CFU) per cubic centimeter was achieved, in all cases. When turbidity of the test medium was greater, part of the UV radiation was spent on the absorption and reactions with extra substances on liquid. Humic acids can also coat the bacteria reducing the sensitivity of the cells to UV light. The lower wavelength was distinctly more efficient when the optical power is considered, even though the difference of wavelengths was small. The reason presumably is the greater absorption of DNA causing more efficient bacterial breakage. UV LEDs were efficient in E. coli destruction, even if LEDs were considered to have rather low optical power. The effect of wavelengths was noticeable but the test medium did not have much impact. This study found UV LEDs to be an optimal method for bacterial

Continuous light-emitting Diode (LED) lighting for improving food quality

OpenAIRE

Lu, C; Bian, Z

2016-01-01

Lighting-emitting diodes (LEDs) have shown great potential for plant growth and development, with higher luminous efficiency and positive impact compared with other artificial lighting. The combined effects of red/blue or/and green, and white LED light on plant growth and physiology, including chlorophyll fluorescence, nitrate content and phytochemical concentration before harvest, were investigated. The results showed that continuous light (CL)\\ud exposure at pre-harvest can effectively redu...

A 3 W High-Voltage Single-Chip Green Light-Emitting Diode with Multiple-Cells Network

Directory of Open Access Journals (Sweden)

W. Wang

2015-01-01

Full Text Available A parallel and series network structure was introduced into the design of the high-voltage single-chip (HV-SC light-emitting diode to inhibit the effect of current crowding and to improve the yield. Using such a design, a 6.6×5 mm2 large area LED chip of 24 parallel stages was demonstrated with 3 W light output power (LOP at the current of 500 mA. The forward voltage was measured to be 83 V with the same current injection, corresponding to 3.5 V for a single stage. The LED chip’s average thermal resistance was identified to be 0.28 K/W by using infrared thermography analysis.

Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

DEFF Research Database (Denmark)

Ou, Yiyu; Fadil, Ahmed; Ou, Haiyan

Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.......Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction....

Color Rendering Index Thermal Stability Improvement of Glass-Based Phosphor-Converted White Light-Emitting Diodes for Solid-State Lighting

Directory of Open Access Journals (Sweden)

Chun-Chin Tsai

2014-01-01

Full Text Available High color rendering index performance has been required for phosphor-converted warm-white light-emitting diodes (PC-WWLEDs in lighting industry. The characteristics of low-temperature fabricated phosphor (yellow: Ce3+:YAG, green: Tb3+:YAG, and red: CaAlClSiN3:Eu2+ doped glass were presented for applications to high color rendering index warm-white-light-emitting diodes. Color coordinates (x, y = (0.36, 0.29, quantum yield (QY = 55.6%, color rending index (CRI = 85.3, and correlated color temperature (CCT = 3923 K were characterized. Glass-based PC-WWLEDs was found able to maintain good thermal stability for long-time high-temperature operation. QY decay, CRI remenance, and chromaticity shift were also analyzed for glass- and silicone-based high-power PC-WLEDs by thermal aging at 150°C and 250°C for industrial test standard’s aging time 1008 hours. Better than the silicone’s, thermal stability of glass-based PC-WLEDs has been improved. The resulted high color rendering index (CRI glass phosphor potentially can be used as a phosphor layer for high-performance and low-cost PC-WLEDs used in next-generation indoor solid-state lighting applications.

Influence of Pre-trimethylindium flow treatment on blue light emitting diode

International Nuclear Information System (INIS)

Xu, Bing; Zhao, Jun Liang; Dai, Hai Tao; Wang, Shu Guo; Lin, Ray-Ming; Chu, Fu-Chuan; Huang, Chou-Hsiung; Yu, Sheng-Fu; Sun, Xiao Wei

2014-01-01

The effects of Pre-trimethylindium (TMIn) flow treatment prior to quantum well growth on blue light emitting diode properties were investigated. High-resolution X-ray diffraction indicated that Pre-TMIn flow treatment did not change the composition of indium in quantum wells, but influenced electrical and optical properties of blue light emitting diode. Electroluminescence exhibited redshift with increasing TMIn treatment time. Though, the forward voltage became a little larger with longer Pre-TMIn treatment time due to the slight phase separation and indium aggregation, the efficiency droop of the device was improved effectively. - Highlights: • Pre-trimethylindium treatment can lead to longer wavelength. • External quantum efficiency can be improved effectively. • Electrical properties are not decreased using Pre-trimethylindium treatment

Influence of Pre-trimethylindium flow treatment on blue light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Xu, Bing; Zhao, Jun Liang [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Dai, Hai Tao, E-mail: htdai@tju.edu.cn [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Wang, Shu Guo [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Lin, Ray-Ming, E-mail: rmlin@mail.cgu.edu.tw [Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan (China); Chu, Fu-Chuan; Huang, Chou-Hsiung [Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan (China); Yu, Sheng-Fu [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Sun, Xiao Wei, E-mail: xwsun@sustc.edu.cn [South University of Science and Technology of China, Shenzhen, Guangdong (China)

2014-01-31

The effects of Pre-trimethylindium (TMIn) flow treatment prior to quantum well growth on blue light emitting diode properties were investigated. High-resolution X-ray diffraction indicated that Pre-TMIn flow treatment did not change the composition of indium in quantum wells, but influenced electrical and optical properties of blue light emitting diode. Electroluminescence exhibited redshift with increasing TMIn treatment time. Though, the forward voltage became a little larger with longer Pre-TMIn treatment time due to the slight phase separation and indium aggregation, the efficiency droop of the device was improved effectively. - Highlights: • Pre-trimethylindium treatment can lead to longer wavelength. • External quantum efficiency can be improved effectively. • Electrical properties are not decreased using Pre-trimethylindium treatment.

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu

2015-12-22

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

Fabrication of organic light emitting diode using Molybdenum ...

Indian Academy of Sciences (India)

65

out by measuring sheet resistance, optical transmittance and surface ... role in the organic light-emitting diode (OLED) performance because it determines the .... coated glass by thermal vacuum deposition method and optimize it by using ...

Light emission mechanism of mixed host organic light-emitting diodes

Science.gov (United States)

Song, Wook; Lee, Jun Yeob

2015-03-01

Light emission mechanism of organic light-emitting diodes with a mixed host emitting layer was studied using an exciplex type mixed host and an exciplex free mixed host. Monitoring of the current density and luminance of the two type mixed host devices revealed that the light emission process of the exciplex type mixed host was dominated by energy transfer, while the light emission of the exciplex free mixed host was controlled by charge trapping. Mixed host composition was also critical to the light emission mechanism, and the contribution of the energy transfer process was maximized at 50:50 mixed host composition. Therefore, it was possible to manage the light emission process of the mixed host devices by managing the mixed host composition.

Response of conifer species from three latitudinal populations to light spectra generated by light-emitting diodes and high-pressure sodium lamps

Science.gov (United States)

Kent G. Apostol; Kas Dumroese; Jeremy Pinto; Anthony S. Davis

2015-01-01

Light-emitting diode (LED) technology shows promise for supplementing photosynthetically active radiation (PAR) in forest nurseries because of the potential reduction in energy consumption and an ability to supply discrete wavelengths to optimize seedling growth. Our objective was to examine the effects of light spectra supplied by LED and traditional high-pressure...

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

KAUST Repository

Janjua, Bilal; Ng, Tien Khee; Zhao, Chao; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Priante, Davide; Shen, Chao; Elafandy, Rami T.; Anjum, Dalaver H.; Alhamoud, Abdullah A.; Alatawi, Abdullah A.; Yang, Yang; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2016-01-01

An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

KAUST Repository

Janjua, Bilal

2016-10-11

An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

Science.gov (United States)

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

White organic light emitting diodes based on fluorene-carbazole dendrimers

Energy Technology Data Exchange (ETDEWEB)

Usluer, Özlem, E-mail: usluerozlem@yahoo.com.tr [Department of Chemistry, Muğla Sıtkı Koçman University, 48000 Muğla (Turkey); Demic, Serafettin [Department of Materials Science and Engineering, Izmir Katip Çelebi University, 35620 Çiğli, Izmir (Turkey); Kus, Mahmut, E-mail: mahmutkus1@gmail.com [Chemical Engineering Department and Advanced Technology R and D Center, Selçuk University, Konya (Turkey); Özel, Faruk [Chemical Engineering Department and Advanced Technology R and D Center, Selçuk University, Konya (Turkey); Serdar Sariciftci, Niyazi [Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz (Austria)

2014-02-15

In this paper, we report on theProd. Type: FTP fabrication and characterization of blue and white light emitting devices based on two fluorene-carbazole containing dendrimers and para-sexiphenyl (6P) oligomers. Blue light emitting diodes were fabricated using 9′,9″-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (OFC-G2) and 9′,9″-(9,9′-spirobi[fluorene]-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (SBFC-G2) dendrimers as a hole transport and emissive layer (EML) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as an electron transport layer. White light emitting diodes were fabricated using 6P and these two dendrimers as an EML. OLED device with the structure of ITO/PEDOT:PSS (50 nm)/OFC-G2 (40 nm)/6P (20 nm)/LiF:Al (0.5:100 nm) shows maximum luminance of nearly 1400 cd/m{sup 2} and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.30) at 12 V. -- Highlights: • White organic light emitting diodes have been fabricated using two fluorene-carbazole dendrimers and para-sexiphenyl (6P) oligomers. • When only these two dendrimers are used as EML, OLED devices are emitted blue light. • The emission colors of OLED devices change from blue to white when 6P is coated on dendrimer films.

Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

International Nuclear Information System (INIS)

Yao-Bo, Pan; Sheng-Li, Qi; Hao, Fang; Guo-Yi, Zhang; Mao-Sheng, Hao

2010-01-01

We report the enhancement of the light extraction of InGaN-based green light emitting diodes (LEDs) via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction. (cross-disciplinary physics and related areas of science and technology)

Color optimization of conjugated-polymer/InGaN hybrid white light emitting diodes by incomplete energy transfer

International Nuclear Information System (INIS)

Chang, Chi-Jung; Lai, Chun-Feng; Madhusudhana Reddy, P.; Chen, Yung-Lin; Chiou, Wei-Yung; Chang, Shinn-Jen

2015-01-01

By using the wavelength conversion method, white light emitting diodes (WLEDs) were produced by applying mixtures of polysiloxane and fluorescent polymers on InGaN based light emitting diodes. UV curable organic–inorganic hybrid materials with high refractive index (1.561), compromised optical, thermal and mechanical properties was used as encapsulants. Red light emitting fluorescent FABD polymer (with 9,9-dioctylfluorene (F), anthracene (A) and 2,1,3-benzothiadiazole (B), and 4,7-bis(2-thienyl)-2,1,3-benzothiadiazole (D) repeating units) and green light emitting fluorescent FAB polymer were used as wavelength converters. The encapsulant/fluorescent polymer mixture and InGaN produce the white light by incomplete energy transfer mechanism. WLEDs with high color rendering index (CRI, about 93), and tunable correlated color temperature (CCT) properties can be produced by controlling the composition and chemical structures of encapsulating polymer and fluorescent polymer in hybrid materials, offering cool-white and neutral-white LEDs. - Highlights: • Highly efficient white light-emitting diodes (WLEDs) were produced. • Conjugated-polymer/InGaN hybrid WLEDs by incomplete energy transfer mechanism. • WLEDs with high color-rendering index and tunable correlated color temperature. • Polysiloxane encapsulant with superior optical, mechanical and thermal properties

Optical design and fabrication of palm/fingerprint uniform illumination system with a high-power near-infrared light-emitting diode.

Science.gov (United States)

Jing, Lei; Wang, Yao; Zhao, Huifu; Ke, Hongliang; Wang, Xiaoxun; Gao, Qun

2017-06-10

In order to meet the requirements of uniform illumination for optical palm/fingerprint instruments and overcome the shortcomings of the poor uniform illumination on the working plane of the optical palm/fingerprint prism, a novel secondary optical lens with a free-form surface, compact structure, and high uniformity is presented in this paper. The design of the secondary optical lens is based on emission properties of the near-infrared light-emitting diode (LED) and basic principles of non-imaging optics, especially considering the impact of the thickness of the prism in the design. Through the numerical solution of Snell's law in geometric optics, we obtain the profile of the free-form surface of the lens. Using the optical software TracePro, we trace and simulate the illumination system. The results show that the uniformity is 89.8% on the working plane of the prism, and the test results show that the actual uniformity reaches 85.7% in the experiment, which provides an effective way for realizing a highly uniform illumination system with high-power near-infrared LED.

A Strategy for Architecture Design of Crystalline Perovskite Light-Emitting Diodes with High Performance.

Science.gov (United States)

Shi, Yifei; Wu, Wen; Dong, Hua; Li, Guangru; Xi, Kai; Divitini, Giorgio; Ran, Chenxin; Yuan, Fang; Zhang, Min; Jiao, Bo; Hou, Xun; Wu, Zhaoxin

2018-06-01

All present designs of perovskite light-emitting diodes (PeLEDs) stem from polymer light-emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, "insulator-perovskite-insulator" (IPI) architecture tailored to PeLEDs. As examples of FAPbBr 3 and MAPbBr 3 , it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr 3 , a 30-fold enhancement in the current efficiency of IPI-structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole-injection layer is achieved-from 0.64 to 20.3 cd A -1 -while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr 3 , compared with the control device, both current efficiency and lifetime of IPI-structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A -1 and 96 h. This IPI architecture represents a novel strategy for the design of light-emitting didoes based on various perovskites with high efficiencies and stabilities. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Accuracy Improvement for Light-Emitting-Diode-Based Colorimeter by Iterative Algorithm

Science.gov (United States)

Yang, Pao-Keng

2011-09-01

We present a simple algorithm, combining an interpolating method with an iterative calculation, to enhance the resolution of spectral reflectance by removing the spectral broadening effect due to the finite bandwidth of the light-emitting diode (LED) from it. The proposed algorithm can be used to improve the accuracy of a reflective colorimeter using multicolor LEDs as probing light sources and is also applicable to the case when the probing LEDs have different bandwidths in different spectral ranges, to which the powerful deconvolution method cannot be applied.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Efficient hole injection in organic light-emitting diodes using polyvinylidenefluoride as an interlayer

Energy Technology Data Exchange (ETDEWEB)

Jeon, Soon Ok; Soo Yook, Kyoung [Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi 448-701 (Korea, Republic of); Lee, Jun Yeob, E-mail: leej17@dankook.ac.k [Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi 448-701 (Korea, Republic of)

2010-10-15

The effect of the polyvinylidenefluoride (PVDF) interlayer on the hole injection and the device performances of the green phosphorescent organic light-emitting diodes (PHOLEDs) was investigated. The hole current density of the hole only device was improved and the power efficiency of the green PHOLEDs was enhanced from 10.5 to 12.5 lm/W by the PVDF interlayer. The reduction of the interfacial energy barrier was responsible for the high hole current density in the PVDF interlayer based green PHOLEDs.

Operation of AC Adapters Visualized Using Light-Emitting Diodes

Science.gov (United States)

Regester, Jeffrey

2016-01-01

A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn; Liu, Bin; Wang, Lianhui [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Shi, Hongying [Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China); Huang, Wei, E-mail: iamdirector@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

2015-02-28

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

Light extraction efficiency enhancement for fluorescent SiC based white light-emitting diodes

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

Fluorescent SiC based white light-emitting diodes(LEDs) light source, as an innovative energy-efficient light source, would even have longer lifetime, better light quality and eliminated blue-tone effect, compared to the current phosphor based white LED light source. In this paper, the yellow...

Low driving voltage blue, green, yellow, red and white organic light-emitting diodes with a simply double light-emitting structure.

Science.gov (United States)

Zhang, Zhensong; Yue, Shouzhen; Wu, Yukun; Yan, Pingrui; Wu, Qingyang; Qu, Dalong; Liu, Shiyong; Zhao, Yi

2014-01-27

Low driving voltage blue, green, yellow, red and white phosphorescent organic light-emitting diodes (OLEDs) with a common simply double emitting layer (D-EML) structure are investigated. Our OLEDs without any out-coupling schemes as well as n-doping strategies show low driving voltage, e.g. white OLED, respectively. This work demonstrates that the low driving voltages and high efficiencies can be simultaneously realized with a common simply D-EML structure.

Graphene as current spreading layer on AlGaInP light emitting diodes

Science.gov (United States)

Guo, Xia; Feng, Yajie; Liu, Qiaoli; Hu, Anqi; He, Xiaoying; Hu, Zonghai

2018-05-01

Due to high transmittance and high mobility, graphene is one of the promising candidates for a current spreading layer, which is crucial to light emitting diode (LED) performance. In this paper, improved AlGaInP LED performance was reported after graphene was applied on the GaP surface. Due to its lowered work function difference than with the GaN material, the electrical properties remain the same without additional voltage bias. The light output power is enhanced by about 40% under the current injection of 5 mA at room temperature, which was confirmed by the light emission profile analysis in this study. Such results indicate that raphene is a promising candidate as a current spreading layer under low current injection.

Color-tunable and high-efficiency organic light-emitting diode by adjusting exciton bilateral migration zone

Science.gov (United States)

Liu, Shengqiang; Wu, Ruofan; Huang, Jiang; Yu, Junsheng

2013-09-01

A voltage-controlled color-tunable and high-efficiency organic light-emitting diode (OLED) by inserting 16-nm N,N'-dicarbazolyl-3,5-benzene (mCP) interlayer between two complementary emitting layers (EMLs) was fabricated. The OLED emitted multicolor ranging from blue (77.4 cd/A @ 6 V), white (70.4 cd/A @ 7 V), to yellow (33.7 cd/A @ 9 V) with voltage variation. An equivalent model was proposed to reveal the color-tunable and high-efficiency emission of OLEDs, resulting from the swing of exciton bilateral migration zone near mCP/blue-EML interface. Also, the model was verified with a theoretical arithmetic using single-EML OLEDs to disclose the crucial role of mCP exciton adjusting layer.

Scalable Light Module for Low-Cost, High-Efficiency Light- Emitting Diode Luminaires

Energy Technology Data Exchange (ETDEWEB)

Tarsa, Eric [Cree, Inc., Goleta, CA (United States)

2015-08-31

During this two-year program Cree developed a scalable, modular optical architecture for low-cost, high-efficacy light emitting diode (LED) luminaires. Stated simply, the goal of this architecture was to efficiently and cost-effectively convey light from LEDs (point sources) to broad luminaire surfaces (area sources). By simultaneously developing warm-white LED components and low-cost, scalable optical elements, a high system optical efficiency resulted. To meet program goals, Cree evaluated novel approaches to improve LED component efficacy at high color quality while not sacrificing LED optical efficiency relative to conventional packages. Meanwhile, efficiently coupling light from LEDs into modular optical elements, followed by optimally distributing and extracting this light, were challenges that were addressed via novel optical design coupled with frequent experimental evaluations. Minimizing luminaire bill of materials and assembly costs were two guiding principles for all design work, in the effort to achieve luminaires with significantly lower normalized cost ($/klm) than existing LED fixtures. Chief project accomplishments included the achievement of >150 lm/W warm-white LEDs having primary optics compatible with low-cost modular optical elements. In addition, a prototype Light Module optical efficiency of over 90% was measured, demonstrating the potential of this scalable architecture for ultra-high-efficacy LED luminaires. Since the project ended, Cree has continued to evaluate optical element fabrication and assembly methods in an effort to rapidly transfer this scalable, cost-effective technology to Cree production development groups. The Light Module concept is likely to make a strong contribution to the development of new cost-effective, high-efficacy luminaries, thereby accelerating widespread adoption of energy-saving SSL in the U.S.

Comparison of organic light emitting diodes with different mixed layer structures

Energy Technology Data Exchange (ETDEWEB)

Kee, Y.Y.; Siew, W.O. [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia); Yap, S.S. [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia); Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Tou, T.Y., E-mail: tytou@mmu.edu.my [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia)

2014-11-03

A mixed-source thermal evaporation method was used to fabricate organic light emitting diodes (OLEDs) with uniformly mixed (UM), continuously graded mixed (CGM) and step-wise graded, mixed (SGM) light-emitting layers. N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine and Tris-(8-hydroxyquinoline)aluminum were used, respectively, as the hole- and electron-transport materials. As compared to the conventional, heterojunction OLED, the maximum brightness of UM-, CGM- and SGM-OLEDs without charge injection layers were improved by 2.2, 3.8 and 2.1 times, respectively, while the maximum power efficiencies improved by 1.5, 3.2 and 1.9 times. These improvements were discussed in terms of more distributed recombination zone and removal of interfacial barrier. - Highlights: • Fabrication of OLEDs using a mixed-source evaporation technique • Three different types of mixed-host OLEDs with better brightness • Improved electroluminescence and power efficiencies as compared to conventional OLED.

Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

International Nuclear Information System (INIS)

Hao, Long; Hao, Fang; Sheng-Li, Qi; Li-Wen, Sang; Wen-Yu, Cao; Jian, Yan; Jun-Jing, Deng; Zhi-Jian, Yang; Guo-Yi, Zhang

2010-01-01

This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

International Nuclear Information System (INIS)

Guan Yunxia; Niu Lianbin

2009-01-01

White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq 3 /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

OpenAIRE

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced t...

Further improvement in the light output power of InGaN-based light emitting diodes by reflective current blocking design

International Nuclear Information System (INIS)

Tsai, Chun-Fu; Su, Yan-Kuin; Lin, Chun-Liang

2011-01-01

In this study, the fabrication and characterization of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with further improvement by the design of a reflective current blocking layer (CBL) were described, and these are demonstrated to be an inexpensive and feasible way for improving the performance of LEDs. With the reflective CBL, not only was the injected current forced to spread outside instead of flowing directly downward under a p-pad, but the light generated from the active region could also be extracted outside of the LED by reflection under the p-pad. At 20 mA, as compared to the conventional LED, the light output power of the LEDs with the normal and reflective CBL can be increased by 15.7% and 25.8%, respectively. We found that the forward voltages of the LEDs with CBL structure were both about 3.7 V at 20 mA, which was slightly higher than that of the conventional LED (3.6 V). In our experiment, the further increase in the light output power of the reflective CBL LED could be attributed to more current injection into the light-emitting active region outside of the p-pad by the CBL and a reduction in optical absorption at the p-pad with more extraction by the reflective design

Carrier Modulation Layer-Enhanced Organic Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Jwo-Huei Jou

2015-07-01

Full Text Available Organic light-emitting diode (OLED-based display products have already emerged in the market and their efficiencies and lifetimes are sound at the comparatively low required luminance. To realize OLED for lighting application sooner, higher light quality and better power efficiency at elevated luminance are still demanded. This review reveals the advantages of incorporating a nano-scale carrier modulation layer (CML, also known as a spacer, carrier-regulating layer, or interlayer, among other terms, to tune the chromaticity and color temperature as well as to markedly improve the device efficiency and color rendering index (CRI for numerous OLED devices. The functions of the CML can be enhanced as multiple layers and blend structures are employed. At proper thickness, the employment of CML enables the device to balance the distribution of carriers in the two emissive zones and achieve high device efficiencies and long operational lifetime while maintaining very high CRI. Moreover, we have also reviewed the effect of using CML on the most significant characteristics of OLEDs, namely: efficiency, luminance, life-time, CRI, SRI, chromaticity, and the color temperature, and see how the thickness tuning and selection of proper CML are crucial to effectively control the OLED device performance.

Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

Energy Technology Data Exchange (ETDEWEB)

Arto V. Nurmikko; Jung Han

2007-03-31

We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the duration of the contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

Tuning the colour of white polymer light emitting diodes

NARCIS (Netherlands)

Kok, M.M. de; Sarfert, W.; Paetzold, R.

2010-01-01

Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

Energy Technology Data Exchange (ETDEWEB)

Guan Yunxia; Niu Lianbin [Key Laboratory of Optical Engineering, College of Physics and Information Technology, Chongqing Normal University, Chongqing 400047 (China)], E-mail: gyxybsy@126.com, E-mail: niulb03@126.com

2009-03-01

White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq{sub 3} /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

Natural substrate lift-off technique for vertical light-emitting diodes

Science.gov (United States)

Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen

2014-04-01

Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm-2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Science.gov (United States)

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

High-efficiency tris(8-hydroxyquinoline)aluminum (Alq3) complexes for organic white-light-emitting diodes and solid-state lighting.

Science.gov (United States)

Pérez-Bolívar, César; Takizawa, Shin-ya; Nishimura, Go; Montes, Victor A; Anzenbacher, Pavel

2011-08-08

Combinations of electron-withdrawing and -donating substituents on the 8-hydroxyquinoline ligand of the tris(8-hydroxyquinoline)aluminum (Alq(3)) complexes allow for control of the HOMO and LUMO energies and the HOMO-LUMO gap responsible for emission from the complexes. Here, we present a systematic study on tuning the emission and electroluminescence (EL) from Alq(3) complexes from the green to blue region. In this study, we explored the combination of electron-donating substituents on C4 and C6. Compounds 1-6 displayed the emission tuning between 478 and 526 nm, and fluorescence quantum yield between 0.15 and 0.57. The compounds 2-6 were used as emitters and hosts in organic light-emitting diodes (OLEDs). The highest OLED external quantum efficiency (EQE) observed was 4.6%, which is among the highest observed for Alq(3) complexes. Also, the compounds 3-5 were used as hosts for red phosphorescent dopants to obtain white light-emitting diodes (WOLED). The WOLEDs displayed high efficiency (EQE up to 19%) and high white color purity (color rendering index (CRI≈85). Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Performance of injection-limited polymer light-emitting diodes

NARCIS (Netherlands)

Blom, P.W.M.; Woudenberg, T.V.; Huiberts, H.; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

2002-01-01

The electro-optical characteristics of a polymer light emitting diode (PLED) with a strongly reduced hole injection have been investigated. The device consists of a poly-p-phenylene vinylene semiconductor with a Ag hole injecting contact, which has an injection barrier of about 1 eV. It is observed

Highly efficient phosphor-converted white organic light-emitting diodes with moderate microcavity and light-recycling filters.

Science.gov (United States)

Cho, Sang-Hwan; Oh, Jeong Rok; Park, Hoo Keun; Kim, Hyoung Kun; Lee, Yong-Hee; Lee, Jae-Gab; Do, Young Rag

2010-01-18

We demonstrate the combined effects of a microcavity structure and light-recycling filters (LRFs) on the forward electrical efficiency of phosphor-converted white organic light-emitting diodes (pc-WOLEDs). The introduction of a single pair of low- and high-index layers (SiO(2)/TiO(2)) improves the blue emission from blue OLED and the insertion of blue-passing and yellow-reflecting LRFs enhances the forward yellow emission from the YAG:Ce(3+) phosphors layers. The enhancement of the luminous efficacy of the forward white emission is 1.92 times that of a conventional pc-WOLED with color coordinates of (0.34, 0.34) and a correlated color temperature of about 4800 K.

Study of photophysical processes in organic light-emitting diodes based on light-emission profile reconstruction

NARCIS (Netherlands)

Carvelli, M.

2012-01-01

Organic light-emitting diodes (OLEDs) are emerging as a promising option for energy-efficient, flexible light sources. A key factor that needs to be measured and controlled is the shape of the emission profile, i.e. the spatial distribution of the emitting excitons across the active layer thickness.

Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

OpenAIRE

Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

2006-01-01

A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from lo...

Optimization of emission color and efficiency of organic light emitting diodes for lighting applications

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Schmid, Guenter; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany)

2008-07-01

In recent years the performance of organic light emitting diodes (OLEDs) has reached a level where OLED lighting presents an interesting application target. Research activities therefore focus amongst other things on the development of high efficient and stable white light emitting devices. We demonstrate how the color coordinates can be adjusted to achieve a warm white emission spectrum, whereas the OLED stack contains phosphorescent red and green dyes combined with a fluorescent blue one. Detailed results are presented with respect to a variation of layer thicknesses and dopant concentrations of the emission layers. Furthermore the influence of various dye molecules and hence different energy level alignments between host and dopants on color and efficiency will be discussed.

Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

Science.gov (United States)

Stark, Christoph J. M.; Detchprohm, Theeradetch; Zhao, Liang; Paskova, Tanya; Preble, Edward A.; Wetzel, Christian

2012-12-01

Non-planar GaInN/GaN light-emitting diodes were epitaxially grown to exhibit steps for enhanced light emission. By means of a large off-cut of the epitaxial growth plane from the c-plane (0.06° to 2.24°), surface morphologies of steps and inclined terraces that resemble fish scale patterns could controllably be achieved. These patterns penetrate the active region without deteriorating the electrical device performance. We find conditions leading to a large increase in light-output power over the virtually on-axis device and over planar sapphire references. The process is found suitable to enhance light extraction even without post-growth processing.

Top-Emitting White Organic Light-Emitting Diodes Based on Cu as Both Anode and Cathode

International Nuclear Information System (INIS)

Mu Ye; Zhang Zhen-Song; Wang Hong-Bo; Qu Da-Long; Wu Yu-Kun; Yan Ping-Rui; Li Chuan-Nan; Zhao Yi

2015-01-01

It is still challenging to obtain broadband emission covering visible light spectrum as much as possible with negligible angular dependence. In this work, we demonstrate a low driving voltage top-emitting white organic light-emitting diode (TEWOLED) based on complementary blue and yellow phosphor emitters with negligible angular dependence. The bottom copper anode with medium reflectance, which is compatible with the standard complementary metal oxide semiconductor (CMOS) technology below 0.13 μm, and the semitransparent multilayer Cs2CO3/Al/Cu cathode as a top electrode, are introduced to realize high-performance TEWOLED. Our TEWOLED achieves high efficiencies of 15.4 cd/A and 12.1 lm/W at a practical brightness of 1000 cd/m 2 at low voltage of 4 V. (paper)

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

International Nuclear Information System (INIS)

Kim, Sukwon; Kim, Tae Geun

2015-01-01

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga_2O_3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10"−"3 Ω-cm"2 with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga_2O_3 targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10"−"3 Ω-cm"2 contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

High-performance organic light-emitting diodes comprising ultrastable glass layers

Science.gov (United States)

Rodríguez-Viejo, Javier

2018-01-01

Organic light-emitting diodes (OLEDs) are one of the key solid-state light sources for various applications including small and large displays, automotive lighting, solid-state lighting, and signage. For any given commercial application, OLEDs need to perform at their best, which is judged by their device efficiency and operational stability. We present OLEDs that comprise functional layers fabricated as ultrastable glasses, which represent the thermodynamically most favorable and, thus, stable molecular conformation achievable nowadays in disordered solids. For both external quantum efficiencies and LT70 lifetimes, OLEDs with four different phosphorescent emitters show >15% enhancements over their respective reference devices. The only difference to the latter is the growth condition used for ultrastable glass layers that is optimal at about 85% of the materials’ glass transition temperature. These improvements are achieved through neither material refinements nor device architecture optimization, suggesting a general applicability of this concept to maximize the OLED performance, no matter which specific materials are used. PMID:29806029

Operation voltage behavior of organic light emitting diodes with polymeric buffer layers doped by weak electron acceptor

Energy Technology Data Exchange (ETDEWEB)

Jeon, Hyeon Soo; Cho, Sang Hee [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Seo, Jaewon; Park, Yongsup [Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Suh, Min Chul, E-mail: mcsuh@khu.ac.kr [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

2013-11-01

We present polymeric buffer materials based on poly[2,7-(9,9-dioctyl-fluorene)-co-(1,4-phenylene -((4-sec-butylphenyl)imino)-1,4-phenylene)] (TFB) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped TFB with 9,10-dicyanoanthracene, a weak electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 12.6 cd/A and 18.1 lm/W are demonstrated from phosphorescent red OLEDs with this doped polymeric anode buffer system. - Highlights: • Polymeric buffer materials for organic light emitting diodes (OLEDs). • Method to control hole conductivity of polymeric buffer layer in OLED device. • Enhanced current density of buffer layers upon 9,10-dicyanoanthracene (DCA) doping. • Comparison of OLED devices having polymeric buffer layer with or without DCA. • Effect on operating voltage by doping DCA in the buffer layer.

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

Science.gov (United States)

2013-01-01

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. PMID:23683526

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl [Inha University, Incheon (Korea, Republic of)

2014-11-15

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

International Nuclear Information System (INIS)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl

2014-01-01

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Phosphorescent Organic Light Emitting Diodes Implementing Platinum Complexes

Science.gov (United States)

Ecton, Jeremy Exton

Organic light emitting diodes (OLEDs) are a promising approach for display and solid state lighting applications. However, further work is needed in establishing the availability of efficient and stable materials for OLEDs with high external quantum efficiency's (EQE) and high operational lifetimes. Recently, significant improvements in the internal quantum efficiency or ratio of generated photons to injected electrons have been achieved with the advent of phosphorescent complexes with the ability to harvest both singlet and triplet excitons. Since then, a variety of phosphorescent complexes containing heavy metal centers including Os, Ni, Ir, Pd, and Pt have been developed. Thus far, the majority of the work in the field has focused on iridium based complexes. Platinum based complexes, however, have received considerably less attention despite demonstrating efficiency's equal to or better than their iridium analogs. In this study, a series of OLEDs implementing newly developed platinum based complexes were demonstrated with efficiency's or operational lifetimes equal to or better than their iridium analogs for select cases. In addition to demonstrating excellent device performance in OLEDs, platinum based complexes exhibit unique photophysical properties including the ability to form excimer emission capable of generating broad white light emission from a single emitter and the ability to form narrow band emission from a rigid, tetradentate molecular structure for select cases. These unique photophysical properties were exploited and their optical and electrical properties in a device setting were elucidated. Utilizing the unique properties of a tridentate Pt complex, Pt-16, a highly efficient white device employing a single emissive layer exhibited a peak EQE of over 20% and high color quality with a CRI of 80 and color coordinates CIE(x=0.33, y=0.33). Furthermore, by employing a rigid, tetradentate platinum complex, PtN1N, with a narrow band emission into a

High-quality vertical light emitting diodes fabrication by mechanical lift-off technique

Science.gov (United States)

Tu, Po-Min; Hsu, Shih-Chieh; Chang, Chun-Yen

2011-10-01

We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal Inversed Pyramid (HIP) structures for vertical light emitting diodes (V-LEDs). The HIP structures were formed at the GaN/sapphire substrate interface under high temperature during KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and found the reduction from 2×109 to 1×108 cm-2. Raman spectroscopy analysis revealed that the compressive stress of GaN epilayer was effectively relieved in the thin-GaN LED with HIP structures. Finally, the mechanical lift-off process is claimed to be successful by using the HIP structures as a sacrificial layer during wafer bonding process.

Light extraction in planar light-emitting diode with nonuniform current injection: model and simulation.

Science.gov (United States)

Khmyrova, Irina; Watanabe, Norikazu; Kholopova, Julia; Kovalchuk, Anatoly; Shapoval, Sergei

2014-07-20

We develop an analytical and numerical model for performing simulation of light extraction through the planar output interface of the light-emitting diodes (LEDs) with nonuniform current injection. Spatial nonuniformity of injected current is a peculiar feature of the LEDs in which top metal electrode is patterned as a mesh in order to enhance the output power of light extracted through the top surface. Basic features of the model are the bi-plane computation domain, related to other areas of numerical grid (NG) cells in these two planes, representation of light-generating layer by an ensemble of point light sources, numerical "collection" of light photons from the area limited by acceptance circle and adjustment of NG-cell areas in the computation procedure by the angle-tuned aperture function. The developed model and procedure are used to simulate spatial distributions of the output optical power as well as the total output power at different mesh pitches. The proposed model and simulation strategy can be very efficient in evaluation of the output optical performance of LEDs with periodical or symmetrical configuration of the electrodes.

Photoresponse of poly(para-phenylenevinylene) light-emitting diodes

International Nuclear Information System (INIS)

Wei, X.; Raikh, M.; Vardeny, Z.V.; Yang, Y.; Moses, D.

1994-01-01

We have studied the photoresponses of poly(para-phenylene vinylene) (PPV) light-emitting diodes (LED's) with PPV derivatives sandwiched between tin oxide (ITO) and metals including calcium, aluminum, and copper. Under illumination all diodes exhibit relatively large photoconductive I(V) responses which cross the dark I(V) curve at a forward-bias voltage V 0 that scales with the difference in work functions between the ITO and metal electrodes, the open-circuit voltage saturates at V 0 and is temperature independent, and the enhanced electroluminescence intensity of the illuminated LED's correlates with the photocurrent

Transparent organic light-emitting diodes with balanced white emission by minimizing waveguide and surface plasmonic loss.

Science.gov (United States)

Zhang, Yi-Bo; Ou, Qing-Dong; Li, Yan-Qing; Chen, Jing-De; Zhao, Xin-Dong; Wei, Jian; Xie, Zhong-Zhi; Tang, Jian-Xin

2017-07-10

It is challenging in realizing high-performance transparent organic light-emitting diodes (OLEDs) with symmetrical light emission to both sides. Herein, an efficient transparent OLED with highly balanced white emission to both sides is demonstrated by integrating quasi-periodic nanostructures into the organic emitter and the metal-dielectric composite top electrode, which can simultaneously suppressing waveguide and surface plasmonic loss. The power efficiency and external quantum efficiency are raised to 83.5 lm W -1 and 38.8%, respectively, along with a bi-directional luminance ratio of 1.26. The proposed scheme provides a facile route for extending application scope of transparent OLEDs for future transparent displays and lightings.

Safety of light emitting diodes in toys.

Science.gov (United States)

Higlett, M P; O'Hagan, J B; Khazova, M

2012-03-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

Safety of light emitting diodes in toys

International Nuclear Information System (INIS)

Higlett, M P; O'Hagan, J B; Khazova, M

2012-01-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

Science.gov (United States)

Zhang, Zhikun; Du, Jinhong; Zhang, Dingdong; Sun, Hengda; Yin, Lichang; Ma, Laipeng; Chen, Jiangshan; Ma, Dongge; Cheng, Hui-Ming; Ren, Wencai

2017-02-01

The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m-2 that can already satisfy the requirements for lighting sources and displays.

Demonstration Assessment of Light-Emitting Diode Parking Structure Lighting at U.S. Department of Labor Headquarters

Energy Technology Data Exchange (ETDEWEB)

Kinzey, Bruce R.; Myer, Michael

2013-03-01

This report documents a solid-state lighting (SSL) technology demonstration at the parking structure of the U.S. Department of Labor (DOL) Headquarters in Washington, DC, in which light-emitting diode (LED) luminaires were substituted for the incumbent high-pressure sodium (HPS) luminaires and evaluated for relative light quantity and performance. The demonstration results show energy savings of 52% from the initial conversion of HPS to the LED product. These savings were increased to 88% by using occupancy sensor controls that were ultimately set to reduce power to 10% of high state operation after a time delay of 2.5 minutes. Because of the relatively high cost of the LED luminaires at their time of purchase for this project (2010), the simple payback periods were 6.5 years and 4.9 years for retrofit and new construction scenarios, respectively. Staff at DOL Headquarters reported high satisfaction with the operation of the LED product.

Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

International Nuclear Information System (INIS)

Zhen, Aigong; Ma, Ping; Zhang, Yonghui; Guo, Enqing; Tian, Yingdong; Liu, Boting; Guo, Shikuan; Shan, Liang; Wang, Junxi; Li, Jinmin

2014-01-01

In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal could improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically

A tunable lighting system integrated by inorganic and transparent organic light-emitting diodes

Science.gov (United States)

Zhang, Jing-jing; Zhang, Tao; Jin, Ya-fang; Liu, Shi-shen; Yuan, Shi-dong; Cui, Zhao; Zhang, Li; Wang, Wei-hui

2014-05-01

A tunable surface-emitting integrated lighting system is constructed using a combination of inorganic light-emitting diodes (LEDs) and transparent organic LEDs (OLEDs). An RB two-color LED is used to supply red and blue light emission, and a green organic LED is used to supply green light emission. Currents of the LED and OLED are tuned to produce a white color, showing different Commission Internationale d'Eclairage (CIE) chromaticity coordinates and correlated color temperatures with a wide adjustable range. Such an integration can compensate for the lack of the LED's luminance uniformity and the transparent OLED's luminance intensity.

High-luminosity blue and blue-green gallium nitride light-emitting diodes.

Science.gov (United States)

Morkoç, H; Mohammad, S N

1995-01-06

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

The efficiency challenge of nitride light-emitting diodes for lighting

KAUST Repository

Weisbuch, Claude

2015-03-13

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. We discuss the challenges of light-emitting diodes in view of their application to solid-state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high intensity discharge lamps used today in the main energy consuming lighting sectors, industrial, commercial and outdoors, with more efficient and better light quality lamps. We show that both from the point of view of cost of ownership and carbon emissions reduction, the relevant metric is efficiency, more than the cost of lumens. Then, progress from present performance requires identification of the loss mechanisms in light emission from LEDs, and solutions competing with mainstream c-plane LEDS grown on sapphire need to be on par with these. Special attention is devoted to a discussion of the efficiency droop mechanisms, and of a recent direct measurement of Auger generated electrons which appear to be responsible for droop.

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Science.gov (United States)

Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

2018-06-08

Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Integrated Automotive High-Power LED-Lighting Systems in 3D-MID Technology

NARCIS (Netherlands)

Thomas, W.

2014-01-01

The growing energy consumption of lighting as well as rising luminous efficacies and -fluxes of high-power Light Emitting Diodes (LEDs) have contributed to the widespread use of LEDs in modern lighting systems. One of the most prominent users of the LED-technology is automotive (exterior) lighting.

Fabrication of high-brightness GaN-based light-emitting diodes via thermal nanoimprinting of ZnO-nanoparticle-dispersed resin

International Nuclear Information System (INIS)

Byeon, Kyeong-Jae; Cho, Joong-Yeon; Jo, Han-Byeol; Lee, Heon

2015-01-01

Highlights: • A various high-refractive-index ZnO patterns were formed on LED using imprinting. • Mechanism of light extraction enhancement was demonstrated by simulation and EL. • Light output power of patterned LED was improved up 19.6% by light waveguide effect. - Abstract: We fabricated high-brightness GaN-based light-emitting diodes (LEDs) with highly refractive patterned structures by using a thermal nanoimprint lithography (NIL). A highly refractive ZnO-nanoparticle-dispersed resin (ZNDR) was used in NIL, and a submicron hole, a submicron high-aspect-ratio pillar, and microconvex arrays were fabricated on the indium tin oxide (ITO) top electrode of GaN-based LED devices. We analyzed the light extraction mechanism for each of the three types of patterns by using a finite element method simulation, and found that the high-aspect-ratio pillar had a great ability to improve light extraction owing to its waveguide effect and prominent scattering effect. As a result, the light output power, which was measured in an integrating sphere, of the LED device was enhanced by up to 19.6% when the high-aspect-ratio pillar array was formed on the top ITO electrode of the device. Further, the electrical properties of none of the patterned LED devices fabricated using ZNDR degraded in comparison to those of bare LED devices

Recent advances in light outcoupling from white organic light-emitting diodes

Science.gov (United States)

Gather, Malte C.; Reineke, Sebastian

2015-01-01

Organic light-emitting diodes (OLEDs) have been successfully introduced to the smartphone display market and have geared up to become contenders for applications in general illumination where they promise to combine efficient generation of white light with excellent color quality, glare-free illumination, and highly attractive designs. Device efficiency is the key requirement for such white OLEDs, not only from a sustainability perspective, but also because at the high brightness required for general illumination, losses lead to heating and may, thus, cause rapid device degradation. The efficiency of white OLEDs increased tremendously over the past two decades, and internal charge-to-photon conversion can now be achieved at ˜100% yield. However, the extraction of photons remains rather inefficient (typically physics of outcoupling in white OLEDs and review recent progress toward making light extraction more efficient. We describe how structures that scatter, refract, or diffract light can be attached to the outside of white OLEDs (external outcoupling) or can be integrated close to the active layers of the device (internal outcoupling). Moreover, the prospects of using top-emitting metal-metal microcavity designs for white OLEDs and of tuning the average orientation of the emissive molecules within the OLED are discussed.

Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

KAUST Repository

Wu, Junbo

2010-01-26

Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We demonstrate organic light-emitting diodes with solution-processed graphene thin film transparent conductive anodes. The graphene electrodes were deposited on quartz substrates by spincoating of an aqueous dispersion of functionalized graphene, followed by a vacuum anneal step to reduce the sheet resistance. Small molecular weight organic materials and a metal cathode were directly deposited on the graphene anodes, resulting in devices with a performance comparable to control devices on indium-tin-oxide transparent anodes. The outcoupling efficiency of devices on graphene and indium-tin-oxide is nearly identical, in agreement with model predictions. © 2010 American Chemical Society.

Contact light-emitting diodes based on vertical ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Panin, G. N. [Dongguk University, Seoul (Korea, Republic of); Russian Academy of Sciences, Chernogolovka, Moscow district (Russian Federation); Cho, H. D.; Lee, S. W.; Kang, T. W. [Dongguk University, Seoul (Korea, Republic of)

2014-05-15

We report vertical contact light-emitting diodes (VCLEDs), that are based on heterojunctions formed by using the point contacts of n-ZnO nanorods (NRs) to the p-type semiconductor substrate and that are fabricated using a new approach to the formation of LEDs (Appl. Phys. Lett. 98, 093110 (2011)). A p-type GaN film grown on a sapphire substrate was used to form n-ZnO NRs/pGaN VCLEDs on a large area of about 4 cm{sup 2}. The VCLEDs emitted a pure blue electroluminescence with high efficiency. Electroluminescence at 470 nm, which is visible to the naked eye, started at small current of about 50 μA and is attributed to the good optical properties of the structurally perfect heterojunctions in the point contacts. The VCLED configuration allows the creation of ZnO/p-GaN nano-LEDs of high density and high-quality with a greatly reduced concentration of nonradiative defects in the active regions. The VCLEDs showed the high brightness of light required for active matrix displays and general solid-state lighting.

Production of poinsettia (Euphorbia Pulcherrima) with light emitting diodes compared with the traditional high pressure sodium lamp

OpenAIRE

Thapa, Sabir

2017-01-01

Use of chemical are commonly used as tools for the commercial pot plant producers to grow strong, dwarfed, and compact plants. Although, these growth regulators have adverse effects on human health and the environment. So, this issue has motivated researchers to search for alternative methods for growth regulation. The aim of this study was to test light emitting diodes (LEDs) with different light qualities alone or in combination with high pressure sodium lamps (HPSs), to investigate their e...

Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.

Science.gov (United States)

Tian, Pengfei; McKendry, Jonathan J D; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D; Liu, Ran

2016-01-11

Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

Non-radiative recombination losses in polymer light-emitting diodes

NARCIS (Netherlands)

Kuik, M.; Koster, L. J. A.; Dijkstra, A. G.; Wetzelaer, G. A. H.; Blom, P. W. M.

We present a quantitative analysis of the loss of electroluminescence in light-emitting diodes (LEDs) based on poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV) due to the combination of non-radiative trap-assisted recombination and exciton quenching at the metallic cathode. It is

Liquid metals as electrodes in polymer light emitting diodes

NARCIS (Netherlands)

Andersson, G.G.; Gommans, H.H.P.; Denier van der Gon, A.W.; Brongersma, H.H.

2003-01-01

We demonstrate that liquid metals can be used as cathodes in light emitting diodes (pLEDs). The main difference between the use of liquid cathodes and evaporated cathodes is the sharpness of the metal–polymer interface. Liquid metal cathodes result in significantly sharper metal–organic interfaces

Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

KAUST Repository

Wu, Junbo; Agrawal, Mukul; Becerril, Héctor A.; Bao, Zhenan; Liu, Zunfeng; Chen, Yongsheng; Peumans, Peter

2010-01-01

Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We

Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5 kA cm−2

International Nuclear Information System (INIS)

Tian, Pengfei; Liu, Ran; Althumali, Ahmad; Gu, Erdan; Watson, Ian M; Dawson, Martin D

2016-01-01

The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm −2 for emerging micro-LED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC. (paper)

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Sukwon; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

2015-09-30

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10{sup −3} Ω-cm{sup 2} with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10{sup −3} Ω-cm{sup 2} contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

The application of the light emitting diode in MR room lighting

International Nuclear Information System (INIS)

Cao Jun; Wang Chunhong

2009-01-01

Objective: To investigate the application of white light emitting diode (LED) in magnetic resonance room, in order to resolve the damageable problem of incandescent lights under the high magnetic field. Methods: The white LEDs and the incandescent lights were installed in MR room, the number of damaged lights was compared after 300 hours. Chi-square test was used for the statistical analysis. And the illuminance and 50 000 hours electricity consumption between LED and incandescent lights were calculated. Results: The number of damaged LED and incandescent lights was 2 and 32, respectively and there was a significant difference (χ 2 =48.813, P=0.000). The illuminance of the LED and incandescent lights was 155 lx and 100 lx at the 0.75 m horizontal level and the 50 000 hour's electricity consumption was 200 kW and 5000 kW, respectively. Conclusion: It is feasible and a great advantage to use the white LEDs in MR room lighting. (authors)

Quantification of lycopene in the processed tomato-based products by means of the light-emitting diode (LED) and compact photoacoustic (PA) detector

NARCIS (Netherlands)

Bicanic, D.D.; Skenderovic, H.; Markovic, K.; Doka, O.; Pichler, L.; Pichler, G.; Luterotti, S.

2010-01-01

The combined use of a high power light emitting diode (LED) and the compact photoacoustic (PA) detector offers the possibility for a rapid (no extraction needed), accurate (precision 1.5%) and inexpensive quantification of lycopene in different products derived from the thermally processed tomatoes.

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

KAUST Repository

Shervin, Shahab

2018-01-26

Deep ultraviolet (DUV) light at the wavelength range of 250‒280 nm (UVC spectrum) is essential for numerous applications such as sterilization, purification, sensing, and communication. III-nitride-based DUV light-emitting diodes (DUV LEDs), like other solid-state lighting sources, offer a great potential to replace the conventional gas-discharged lamps with short lifetimes and toxic-element-bearing nature. However, unlike visible LEDs, the DUV LEDs are still suffering from low quantum efficiencies (QEs) and low optical output powers. In this work, reported is a new route to improve QEs of AlGaN-based DUV LEDs using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency (IQE) is enhanced higher than three times, when the DUV LEDs are moderately bent to induce in-plane compressive strain in the heterostructure. Furthermore, efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

KAUST Repository

Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon Hwa; Asadirad, Mojtaba; Kim, Seung Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon-Seop; Ryou, Jae-Hyun

2018-01-01

Deep ultraviolet (DUV) light at the wavelength range of 250‒280 nm (UVC spectrum) is essential for numerous applications such as sterilization, purification, sensing, and communication. III-nitride-based DUV light-emitting diodes (DUV LEDs), like other solid-state lighting sources, offer a great potential to replace the conventional gas-discharged lamps with short lifetimes and toxic-element-bearing nature. However, unlike visible LEDs, the DUV LEDs are still suffering from low quantum efficiencies (QEs) and low optical output powers. In this work, reported is a new route to improve QEs of AlGaN-based DUV LEDs using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency (IQE) is enhanced higher than three times, when the DUV LEDs are moderately bent to induce in-plane compressive strain in the heterostructure. Furthermore, efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

Light emitting diodes as an alternative ambient illumination source in photolithography environment

DEFF Research Database (Denmark)

Corell, Dennis Dan; Ou, Haiyan; Dam-Hansen, Carsten

2009-01-01

We explored an alternative light emitting diode (LED) - based solution to replace the existing yellow fluorescent light tubes (YFT) used in photolithography rooms. A no-blue LED lamp was designed and a prototype was fabricated. For both solutions, the spectral power distribution (SPD) was measured......, the colorimetric values were calculated, and a visual comparison using Gretagmacbeth colorcharts was performed. The visual comparison showed that the LED bulb was better to render colors despite a low color rendering index (CRI). Furthermore, the LED bulb was tested in a photolithography room...... and there was no exposure to the photoresist even after 168 hours illumination....

Optical design of adjustable light emitting diode for different lighting requirements

International Nuclear Information System (INIS)

Lu Jia-Ning; Yu Jie; Tong Yu-Zhen; Zhang Guo-Yi

2012-01-01

Light emitting diode (LED) sources have been widely used for illumination. Optical design, especially freedom compact lens design is necessary to make LED sources applied in lighting industry, such as large-range interior lighting and small-range condensed lighting. For different lighting requirements, the size of target planes should be variable. In our paper we provide a method to design freedom lens according to the energy conservation law and Snell law through establishing energy mapping between the luminous flux emitted by a Lambertian LED source and a certain area of the target plane. The algorithm of our design can easily change the radius of each circular target plane, which makes the size of the target plane adjustable. Ray-tracing software Tracepro is used to validate the illuminance maps and polar-distribution maps. We design lenses for different sizes of target planes to meet specific lighting requirements. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays.

Science.gov (United States)

Kang, Ji Hye; Kim, Hyung Gu; Chandramohan, S; Kim, Hyun Kyu; Kim, Hee Yun; Ryu, Jae Hyoung; Park, Young Jae; Beak, Yun Seon; Lee, Jeong-Sik; Park, Joong Seo; Lysak, Volodymyr V; Hong, Chang-Hee

2012-01-01

The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA. © 2012 Optical Society of America

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

Science.gov (United States)

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments.

Development of a Highly Efficient Hybrid White Organic-Light-Emitting Diode with a Single Emission Layer by Solution Processing.

Science.gov (United States)

Wu, Jun-Yi; Chen, Show-An

2018-02-07

We use a mixed host, 2,6-bis[3-(carbazol-9-yl)phenyl]pyridine blended with 20 wt % tris(4-carbazoyl-9-ylphenyl)amine, to lower the hole-injection barrier, along with the bipolar and high-photoluminescence-quantum-yield (Φ p = 84%), blue thermally activated delay fluorescence (TADF) material of 9,9-dimethyl-9,10-dihydroacridine-2,4,6-triphenyl-1,3,5-triazine (DMAC-TRZ) as a blue dopant to compose the emission layer for the fabrication of a TADF blue organic-light-emitting diode (BOLED). The device is highly efficient with the following performance parameters: maximum brightness (B max ) = 57586 cd/m 2 , maximum current efficiency (CE max ) = 35.3 cd/A, maximum power efficiency (PE max ) = 21.4 lm/W, maximum external quantum efficiency (EQE max ) = 14.1%, and CIE coordinates (0.18, 0.42). This device has the best performance recorded among the reported solution-processed TADF BOLEDs and has a low efficiency roll-off: at brightness values of 1000 and 5000 cd/m 2 , its CEs are close, being 35.1 and 30.1 cd/A, respectively. Upon further doping of the red phosphor Ir(dpm)PQ 2 (emission peak λ max = 595 nm) into the blue emission layer, we obtained a TADF-phosphor hybrid white organic-light-emitting diode (T-P hybrid WOLED) with high performance: B max = 43594 cd/m 2 , CE max = 28.8 cd/A, PE max = 18.1 lm/W, and CIE coordinates (0.38, 0.44). This B max = 43594 cd/m 2 is better than that of the vacuum-deposited WOLED with a blue TADF emitter, 10000 cd/m 2 . This is also the first report on a T-P hybrid WOLED with a solution-processed emitting layer.

Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

DEFF Research Database (Denmark)

Mesta, Murat; Carvelli, Marco; de Vries, Rein J

2013-01-01

we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile......In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here...

Nano-honeycomb structured transparent electrode for enhanced light extraction from organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Shi, Xiao-Bo; Qian, Min; Wang, Zhao-Kui, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn; Liao, Liang-Sheng, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu 215123 (China)

2015-06-01

A universal nano-sphere lithography method has been developed to fabricate nano-structured transparent electrode, such as indium tin oxide (ITO), for light extraction from organic light-emitting diodes (OLEDs). Perforated SiO{sub 2} film made from a monolayer colloidal crystal of polystyrene spheres and tetraethyl orthosilicate sol-gel is used as a template. Ordered nano-honeycomb pits on the ITO electrode surface are obtained by chemical etching. The proposed method can be utilized to form large-area nano-structured ITO electrode. More than two folds' enhancement in both current efficiency and power efficiency has been achieved in a red phosphorescent OLED which was fabricated on the nano-structured ITO substrate.

White light-emitting diodes (LEDs) using (oxy)nitride phosphors

International Nuclear Information System (INIS)

Xie, R-J; Hirosaki, N; Sakuma, K; Kimura, N

2008-01-01

(Oxy)nitride phosphors have attracted great attention recently because they are promising luminescent materials for phosphor-converted white light-emitting diodes (LEDs). This paper reports the luminescent properties of (oxy)nitride phosphors in the system of M-Si-Al-O-N (M = Li, Ca or Sr), and optical properties of white LEDs using a GaN-based blue LED and (oxy)nitride phosphors. The phosphors show high conversion efficiency of blue light, suitable emission colours and small thermal quenching. The bichromatic white LEDs exhibit high luminous efficacy (∼55 lm W -1 ) and the multi-phosphor converted white LEDs show high colour rendering index (Ra 82-95). The results indicate that (oxy)nitride phosphors demonstrate their superior suitability to use as down-conversion luminescent materials in white LEDs

Efficient light harvesting from flexible perovskite solar cells under indoor white light-emitting diode illumination

NARCIS (Netherlands)

Lucarelli, G.; Di Giacomo, F.; Zardetto, V.; Creatore, M.; Brown, T.M.

2017-01-01

This is the first report of an investigation on flexible perovskite solar cells for artificial light harvesting by using a white light-emitting diode (LED) lamp as a light source at 200 and 400 lx, values typically found in indoor environments. Flexible cells were developed using either

Atom probe tomography of a commercial light emitting diode

International Nuclear Information System (INIS)

Larson, D J; Prosa, T J; Olson, D; Lawrence, D; Clifton, P H; Kelly, T F; Lefebvre, W

2013-01-01

The atomic-scale analysis of a commercial light emitting diode device purchased at retail is demonstrated using a local electrode atom probe. Some of the features are correlated with transmission electron microscopy imaging. Subtle details of the structure that are revealed have potential significance for the design and performance of this device

Electro-optical properties of a polymer light-emitting diode with an injection-limited hole contact

NARCIS (Netherlands)

van Woudenbergh, T; Blom, PWM; Huiberts, JN

2003-01-01

The electro-optical characteristics of a polymer light-emitting diode with a strongly reduced hole injection have been investigated. A silver contact on poly-dialkoxy-p-phenylene vinylene decreases the hole injection by five orders of magnitude, resulting in both a highly reduced light output and

Color Shift Modeling of Light-Emitting Diode Lamps in Step-Loaded Stress Testing

OpenAIRE

Cai, Miao; Yang, Daoguo; Huang, J.; Zhang, Maofen; Chen, Xianping; Liang, Caihang; Koh, S.W.; Zhang, G.Q.

2017-01-01

The color coordinate shift of light-emitting diode (LED) lamps is investigated by running three stress-loaded testing methods, namely step-up stress accelerated degradation testing, step-down stress accelerated degradation testing, and constant stress accelerated degradation testing. A power model is proposed as the statistical model of the color shift (CS) process of LED products. Consequently, a CS mechanism constant is obtained for detecting the consistency of CS mechanisms among various s...

An optically stabilized fast-switching light emitting diode as a light source for functional neuroimaging.

Directory of Open Access Journals (Sweden)

Daniel A Wagenaar

Full Text Available Neuroscience research increasingly relies on optical methods for evoking neuronal activity as well as for measuring it, making bright and stable light sources critical building blocks of modern experimental setups. This paper presents a method to control the brightness of a high-power light emitting diode (LED light source to an unprecedented level of stability. By continuously monitoring the actual light output of the LED with a photodiode and feeding the result back to the LED's driver by way of a proportional-integral controller, drift was reduced to as little as 0.007% per hour over a 12-h period, and short-term fluctuations to 0.005% root-mean-square over 10 seconds. The LED can be switched on and off completely within 100 μs, a feature that is crucial when visual stimuli and light for optical recording need to be interleaved to obtain artifact-free recordings. The utility of the system is demonstrated by recording visual responses in the central nervous system of the medicinal leech Hirudo verbana using voltage-sensitive dyes.

Using interlayer step-wise triplet transfer to achieve an efficient white organic light-emitting diode with high color-stability

Energy Technology Data Exchange (ETDEWEB)

Wang, Qi [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Department of Electrical Engineering and Computer Sciences, College of Engineering, South Dakota State University, Brookings, South Dakota 57007 (United States); Ma, Dongge, E-mail: mdg1014@ciac.jl.cn; Ding, Junqiao; Wang, Lixiang [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Leo, Karl [Tech. Univ. Dresden, Inst. Angew. Photophys., D-01062 Dresden (Germany); Qiao, Qiquan [Department of Electrical Engineering and Computer Sciences, College of Engineering, South Dakota State University, Brookings, South Dakota 57007 (United States); Jia, Huiping; Gnade, Bruce E. [Department of Materials Science and Engineering and Erik Jonsson School of Engineering and Computer Science, University of Texas at Dallas, Richardson, Texas 75083 (United States)

2014-05-12

An efficient phosphorescent white organic light emitting-diode with a red-green-blue tri-emitting-layer structure is reported. The host of the red dopant possesses a lower triplet-energy than the green dye. An interlayer step-wise triplet transfer via blue dye → green dye → red host → red dye is achieved. This mechanism allows an efficient triplet harvesting by the three dopants, thus maintaining a balanced white light and reducing energy loss. Moreover, the color stability of the device is improved significantly. The white device not only achieves a peak external quantum efficiency of 21.1 ± 0.8% and power efficiency of 37.5 ± 1.4 lm/W but shows no color shift over a wide range of voltages.

III-nitride based light emitting diodes and applications

CERN Document Server

Han, Jung; Amano, Hiroshi; Morkoç, Hadis

2013-01-01

Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on th...

Degradation of phosphorescent blue organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Chiu, Chien-Shu [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Steinbacher, Frank [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Krause, Ralf; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Kowalsky, Wolfgang [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany)

2009-07-01

Development of phosphorescent materials has significantly improved the efficiency of organic light-emitting diodes (OLEDs). By using efficient red, green and blue phosphorescent emitter materials high efficient white OLEDs can be achieved. However, due to low stability of blue phosphorescent materials the lifetime of phosphorescent white OLEDs remains an issue. As a result, degradation of blue phosphorescent materials needs to be further investigated and improved. In this work, blue OLED devices based on the phosphorescent emitter FIrpic were investigated. Single-carrier hole-only as well as electron-only devices were fabricated. For investigation of degradation process the devices were stressed with electrical current and UV-light to study the impact of charge carriers as well as excitons and exciton-polaron quenching on the stability of the blue dye.

Temperature rise induced by some light emitting diode and quartz-tungsten-halogen curing units.

Science.gov (United States)

Asmussen, Erik; Peutzfeldt, Anne

2005-02-01

Because of the risk of thermal damage to the pulp, the temperature rise induced by light-curing units should not be too high. LED (light emitting diode) curing units have the main part of their irradiation in the blue range and have been reported to generate less heat than QTH (quartz-tungsten-halogen) curing units. This study had two aims: first, to measure the temperature rise induced by ten LED and three QTH curing units; and, second, to relate the measured temperature rise to the power density of the curing units. The light-induced temperature rise was measured by means of a thermocouple embedded in a small cylinder of resin composite. The power density was measured by using a dental radiometer. For LED units, the temperature rise increased with increasing power density, in a statistically significant manner. Two of the three QTH curing units investigated resulted in a higher temperature rise than LED curing units of the same power density. Previous findings, that LED curing units induce less temperature rise than QTH units, does not hold true in general.

Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

Science.gov (United States)

Chen, Chun-Yen; Chen, Wei-Cheng; Chang, Ching-Hong; Lee, Yu-Lin; Liu, Wen-Chau

2018-05-01

Textured-sidewall GaN-based light-emitting diodes (LEDs) with various sidewall angles (15-90°) and convex or concave sidewalls prepared using an inductively-coupled-plasma approach are comprehensively fabricated and studied. The device with 45° sidewalls (Device F) and that with convex sidewalls (Device B) show significant improvements in optical properties. Experiments show that, at an injection current of 350 mA, the light output power, external quantum efficiency, wall-plug efficiency, and luminous flux of Device F (Device B) are greatly improved by 18.3% (18.2%), 18.2% (18.2%), 17.3% (19.8%), and 16.6% (18.4%), respectively, compared to those of a conventional LED with flat sidewalls. In addition, negligible degradation in electrical properties is found. The enhanced optical performance is mainly attributed to increased light extraction in the horizontal direction due to a significant reduction in total internal reflection at the textured sidewalls. Therefore, the reported specific textured-sidewall structures (Devices B and F) are promising for high-power GaN-based LED applications.

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Comparison of silicone and spin-on glass packaging materials for light-emitting diode encapsulation

Energy Technology Data Exchange (ETDEWEB)

Chang, Liann-Be; Pan, Ke-Wei; Yen, Chia-Yi [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Jeng, Ming-Jer, E-mail: mjjeng@mail.cgu.edu.tw [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Wu, Chun-Te; Hu, Sung-Cheng; Kuo, Yang-Kuao [Chemical Systems Research Division, Chung-Shan Institute of Science and Technology Armaments Bureau, MND, Taoyuan, Taiwan (China)

2014-11-03

Traditional white light light-emitting diode (LED) encapsulation is performed by mixed phosphors and silicone coating on LED die. However, this encapsulation with silicone coating incurs overheated temperatures and yellowing problem. Therefore, this work attempts to replace silicone paste by using spin-on-glass (SOG) materials. Experimental results indicate that although initial brightness of SOG-based packaging is lower than that of silicone packaging, its light attenuation is significantly lower than that of silicone for a long lighting time. After the LED power is turned on for 12 h, the brightness of LED with silicone and SOG material packaging decreases from 84 to 48 lm and 73 to 59 lm, respectively. Therefore, SOG material provides an alternative packaging solution for high power LED lighting applications. - Highlights: • Spin-on-glass (SOG) material was used to replace silicone coating for LED packaging. • Initial brightness of SOG packaging is lower than that of silicone packaging. • Over time, light attenuation in SOG is much lower than that in silicone. • Color rendering index and brightness of LED packaging was optimized by Taguchi method.

Is it viable to improve light output efficiency by nano-light-emitting diodes?

Energy Technology Data Exchange (ETDEWEB)

Wang, Chao-Hung; Huang, Yu-Wen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Wu, Shang-En [Genesis Photonics Incorporation, Tainan 70101, Taiwan (China); Liu, Chuan-Pu, E-mail: cpliu@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-12-02

Nanopillar arrays with InGaN/GaN multiple-quantum-disks (MQDs) are fabricated by focused-ion-beam milling with surface damage layer removed by KOH wet etching. Nano-light-emitting diodes (Nano-LEDs) made of the InGaN/GaN MQD nanopillars are found to have 19.49% less output power than that of a conventional LED. The reasons are analyzed in detail and considering their current-voltage and electroluminescence characteristics, internal quantum efficiency, external quantum efficiency, light extraction, and wall-plug efficiency. Our results suggest that nanopillar-LED can outperform if the density can be increased to 2.81 × 10{sup 9} cm{sup −2} with the size unchanged or the size can be increased to 854.4 nm with the density unchanged.

Amber light-emitting diode comprising a group III-nitride nanowire active region

Science.gov (United States)

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Investigation of organic light emitting diodes for interferometric purposes

Science.gov (United States)

Pakula, Anna; Zimak, Marzena; Sałbut, Leszek

2011-05-01

Recently the new type of light source has been introduced to the market. Organic light emitting diode (OLED) is not only interesting because of the low applying voltage, wide light emitting areas and emission efficiency. It gives the possibility to create a light source of a various shape, various color and in the near future very likely even the one that will change shape and spectrum in time in controlled way. Those opportunities have not been in our reach until now. In the paper authors try to give an answer to the question if the new light source -OLED - is suitable for interferometric purposes. Tests cover the short and long term spectrum stability, spectrum changes due to the emission area selection. In the paper the results of two OLEDs (red and white) are shown together with the result of an attempt to use them in an interferometric setup.

Highly Efficient Light-Emitting Diodes of Colloidal Metal-Halide Perovskite Nanocrystals beyond Quantum Size.

Science.gov (United States)

Kim, Young-Hoon; Wolf, Christoph; Kim, Young-Tae; Cho, Himchan; Kwon, Woosung; Do, Sungan; Sadhanala, Aditya; Park, Chan Gyung; Rhee, Shi-Woo; Im, Sang Hyuk; Friend, Richard H; Lee, Tae-Woo

2017-07-25

Colloidal metal-halide perovskite quantum dots (QDs) with a dimension less than the exciton Bohr diameter D B (quantum size regime) emerged as promising light emitters due to their spectrally narrow light, facile color tuning, and high photoluminescence quantum efficiency (PLQE). However, their size-sensitive emission wavelength and color purity and low electroluminescence efficiency are still challenging aspects. Here, we demonstrate highly efficient light-emitting diodes (LEDs) based on the colloidal perovskite nanocrystals (NCs) in a dimension > D B (regime beyond quantum size) by using a multifunctional buffer hole injection layer (Buf-HIL). The perovskite NCs with a dimension greater than D B show a size-irrespective high color purity and PLQE by managing the recombination of excitons occurring at surface traps and inside the NCs. The Buf-HIL composed of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and perfluorinated ionomer induces uniform perovskite particle films with complete film coverage and prevents exciton quenching at the PEDOT:PSS/perovskite particle film interface. With these strategies, we achieved a very high PLQE (∼60.5%) in compact perovskite particle films without any complex post-treatments and multilayers and a high current efficiency of 15.5 cd/A in the LEDs of colloidal perovskite NCs, even in a simplified structure, which is the highest efficiency to date in green LEDs that use colloidal organic-inorganic metal-halide perovskite nanoparticles including perovskite QDs and NCs. These results can help to guide development of various light-emitting optoelectronic applications based on perovskite NCs.

Doping of nano structures for light emitting diode applications

International Nuclear Information System (INIS)

Han, S. W.; Yoo, H. J.; Jeong, E. S.; Park, S. H.

2006-04-01

Lighting Emitting Diodes (LED) have been widely studied and developed for practical applications and the LED market in the world have been dramatically expended. GaN-based LEDs are mostly used. However, for diverse application, we should first solved several problems in the GaN-based LEDs, thermal heating effects and low light emitting efficiency. The thermal heating effects reduce the life time of LEDs and the low light emitting efficiency are disadvantageous in competition with electric lights. In this project, we studied the possibility of ZnO nanomaterials as LEDs. We have developed a techniques to fabricated reproducible ZnO nanorod arrays on various substrates with 40 - 100 nm diameters. We have successfully fabricated two-dimensional ZnO film growth on one-dimensional nanorods. We have also systematically studied ZnO nanorod growth on GaN and Al 2 O 3 substrated with different proton treatments to understand the ZnO nanorod growth mechanism. These techniques will be used to develop p-ZnO/n-ZnO nanomaterials as LEDs

Microcavity-Free Broadband Light Outcoupling Enhancement in Flexible Organic Light-Emitting Diodes with Nanostructured Transparent Metal-Dielectric Composite Electrodes.

Science.gov (United States)

Xu, Lu-Hai; Ou, Qing-Dong; Li, Yan-Qing; Zhang, Yi-Bo; Zhao, Xin-Dong; Xiang, Heng-Yang; Chen, Jing-De; Zhou, Lei; Lee, Shuit-Tong; Tang, Jian-Xin

2016-01-26

Flexible organic light-emitting diodes (OLEDs) hold great promise for future bendable display and curved lighting applications. One key challenge of high-performance flexible OLEDs is to develop new flexible transparent conductive electrodes with superior mechanical, electrical, and optical properties. Herein, an effective nanostructured metal/dielectric composite electrode on a plastic substrate is reported by combining a quasi-random outcoupling structure for broadband and angle-independent light outcoupling of white emission with an ultrathin metal alloy film for optimum optical transparency, electrical conduction, and mechanical flexibility. The microcavity effect and surface plasmonic loss can be remarkably reduced in white flexible OLEDs, resulting in a substantial increase in the external quantum efficiency and power efficiency to 47.2% and 112.4 lm W(-1).

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

Science.gov (United States)

Rogers, John A.; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

2017-05-09

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

International Nuclear Information System (INIS)

Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

2002-01-01

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm

Light emitting diodes (LED): applications in forest and native plant nurseries

Science.gov (United States)

Thomas D. Landis; Jeremiah R. Pinto; R. Kasten Dumroese

2013-01-01

It was quotes like this that made us want to learn more about light emitting diodes (LED). Other than knowing that LEDs were the latest innovation in artificial lighting, we knew that we had a lot to learn. So we started by reviewing some of the basics. The following review is a brief synopsis of how light affects plants and some discussion about LED lighting. If you...

Applications of Light Emitting Diodes in Health Care.

Science.gov (United States)

Dong, Jianfei; Xiong, Daxi

2017-11-01

Light emitting diodes (LEDs) have become the main light sources for general lighting, due to their high lumen efficiency and long life time. Moreover, their high bandwidth and the availability of diverse wavelength contents ranging from ultraviolet to infrared empower them with great controllability in tuning brightness, pulse durations and spectra. These parameters are the essential ingredients of the applications in medical imaging and therapies. Despite the fast advances in both LED technologies and their applications, few reviews have been seen to link the controllable emission properties of LEDs to these applications. The objective of this paper is to bridge this gap by reviewing the main control techniques of LEDs that enable creating enhanced lighting patterns for imaging and generating effective photon doses for photobiomodulation. This paper also provides the basic mechanisms behind the effective LED therapies in treating cutaneous and neurological diseases. The emerging field of optogenetics is also discussed with a focus on the application of LEDs. The multidisciplinary topics reviewed in this paper can help the researchers in LEDs, imaging, light therapy and optogenetics better understand the basic principles in each other's field; and hence to stimulate the application of LEDs in health care.

Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

Science.gov (United States)

Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

2018-05-01

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

Enhancing the Light-Extraction Efficiency of AlGaN Nanowires Ultraviolet Light-Emitting Diode by using Nitride/Air Distributed Bragg Reflector Nanogratings

KAUST Repository

Alias, Mohd Sharizal; Janjua, Bilal; Zhao, Chao; Priante, Davide; Alhamoud, Abdullah A.; Tangi, Malleswararao; Alanazi, Lafi M.; Alatawi, Abdullah A.; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

2017-01-01

The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstrate an AlGaN nanowires light-emitting diode (NWs-LED) integrated with nitride/air Distributed Bragg Reflector (DBR) nanogratings. Compared to a control device (only mesa), the AlGaN NWs-LED with the nitride/air DBR nanogratings exhibit enhancement in the light output power and external quantum efficiency (EQE) by a factor of ∼1.67. The higher light output power and EQE are attributed mainly to the multiple reflectances laterally for the transverse magnetic (TM)-polarized light and scattering introduced by the nanogratings. To further understand the LEE enhancement, the electrical field distribution, extraction ratio and polar pattern of the AlGaN NWs-LED with and without the nitride/air DBR nanogratings were analyzed using the finite-difference-time-domain method. It was observed that the TM-field emission was confined and scattered upward whereas the polar pattern was intensified for the AlGaN NWs-LED with the nanogratings. Our approach to enhance the LEE via the nitride/air DBR nanogratings can provide a promising route for increasing the efficiency of AlGaN-based LEDs, also, to functioning as facet mirror for AlGaN-based laser diodes.

Enhancing the Light-Extraction Efficiency of AlGaN Nanowires Ultraviolet Light-Emitting Diode by using Nitride/Air Distributed Bragg Reflector Nanogratings

KAUST Repository

Alias, Mohd Sharizal

2017-09-11

The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstrate an AlGaN nanowires light-emitting diode (NWs-LED) integrated with nitride/air Distributed Bragg Reflector (DBR) nanogratings. Compared to a control device (only mesa), the AlGaN NWs-LED with the nitride/air DBR nanogratings exhibit enhancement in the light output power and external quantum efficiency (EQE) by a factor of ∼1.67. The higher light output power and EQE are attributed mainly to the multiple reflectances laterally for the transverse magnetic (TM)-polarized light and scattering introduced by the nanogratings. To further understand the LEE enhancement, the electrical field distribution, extraction ratio and polar pattern of the AlGaN NWs-LED with and without the nitride/air DBR nanogratings were analyzed using the finite-difference-time-domain method. It was observed that the TM-field emission was confined and scattered upward whereas the polar pattern was intensified for the AlGaN NWs-LED with the nanogratings. Our approach to enhance the LEE via the nitride/air DBR nanogratings can provide a promising route for increasing the efficiency of AlGaN-based LEDs, also, to functioning as facet mirror for AlGaN-based laser diodes.

Exciplex-Forming Cohost for High Efficiency and High Stability Phosphorescent Organic Light-Emitting Diodes.

Science.gov (United States)

Shih, Chun-Jen; Lee, Chih-Chien; Chen, Ying-Hao; Biring, Sajal; Kumar, Gautham; Yeh, Tzu-Hung; Sen, Somaditya; Liu, Shun-Wei; Wong, Ken-Tsung

2018-01-17

An exciplex forming cohost system is employed to achieve a highly efficient organic light-emitting diode (OLED) with good electroluminescent lifetime. The exciplex is formed at the interfacial contact of a conventional star-shaped carbazole hole-transporting material, 4,4',4″-tris(N-carbazolyl)-triphenylamine (TCTA), and a triazine electron-transporting material, 2,4,6-tris[3-(1H-pyrazol-1-yl)phenyl]-1,3,5-triazine (3P-T2T). The excellent combination of TCTA and 3P-T2T is applied as the cohost of a common green phosphorescent emitter with almost zero energy loss. When Ir(ppy) 2 (acac) is dispersed in such exciplex cohost system, OLED device with maximum external quantum efficiency of 29.6%, the ultrahigh power efficiency of 147.3 lm/W, and current efficiency of 107 cd/A were successfully achieved. More importantly, the OLED device showed a low-efficiency roll-off and an operational lifetime (τ 80 ) of ∼1020 min with the initial brightness of 2000 cd/m 2 , which is 56 times longer than the reference device. The significant difference of device stability was attributed to the degradation of exciplex system for energy transfer process, which was investigated by the photoluminescence aging measurement at room temperature and 100 K, respectively.

High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

KAUST Repository

Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab

2011-01-01

peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010

Two stacked tandem white organic light-emitting diodes employing WO3 as a charge generation layer

Science.gov (United States)

Bin, Jong-Kwan; Lee, Na Yeon; Lee, SeungJae; Seo, Bomin; Yang, JoongHwan; Kim, Jinook; Yoon, Soo Young; Kang, InByeong

2016-09-01

Recently, many studies have been conducted to improve the electroluminescence (EL) performance of organic lightemitting diodes (OLEDs) by using appropriate organic or inorganic materials as charge generation layer (CGL) for their application such as full color displays, backlight units, and general lighting source. In a stacked tandem white organic light-emitting diodes (WOLEDs), a few emitting units are electrically interconnected by a CGL, which plays the role of generating charge carriers, and then facilitate the injection of it into adjacent emitting units. In the present study, twostacked WOLEDs were fabricated by using tungsten oxide (WO3) as inorganic charge generation layer and 1,4,5,8,9,11- hexaazatriphenylene hexacarbonitrile (HAT-CN) as organic charge generation layer (P-CGL). Organic P-CGL materials were used due to their ease of use in OLED fabrication as compared to their inorganic counterparts. To obtain high efficiency, we demonstrate two-stacked tandem WOLEDs as follows: ITO/HIL/HTL/HTL'/B-EML/ETL/N-CGL/P-CGL (WO3 or HAT-CN)/HTL″/YG-EML/ETL/LiF/Al. The tandem devices with blue- and yellow-green emitting layers were sensitive to the thickness of an adjacent layer, hole transporting layer for the YG emitting layer. The WOLEDs containing the WO3 as charge generation layer reach a higher power efficiency of 19.1 lm/W and the current efficiency of 51.2 cd/A with the white color coordinate of (0.316, 0.318) than the power efficiency of 13.9 lm/W, and the current efficiency of 43.7 cd/A for organic CGL, HAT-CN at 10 mA/cm2, respectively. This performance with inserting WO3 as CGL exhibited the highest performance with excellent CIE color coordinates in the two-stacked tandem OLEDs.

Azimuthal anisotropy of light extraction from photonic crystal light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lai, Chun-Feng; Lu, T.C.; Wang, S.C. [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Chao, C.H.; Hsueh, H.T.; Wang, J.F.T.; Yeh, W.Y.; Chi, J.Y. [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China); Kuo, H.C.

2008-07-01

Photonic crystal (PhC) light-emitting diodes (LEDs) exhibiting anisotropic light extraction have been investigated experimentally and theoretically. It is found that the anisotropic light extraction strongly depends on the lattice constant and orientation. Optical images of the anisotropy in the azimuthal direction are obtained using annular structure with triangular lattice. 6-fold symmetric light extraction patterns with varying number of petals are observed. More petals in multiple of 6 appear in the observed image with lattice constant increasing. This anisotropic behavior suggests a new means to optimize the PhC design of GaN LED for light extraction. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Enhanced Performance of Bipolar Cascade Light Emitting Diodes by Doping the Aluminum Oxide Apertures

National Research Council Canada - National Science Library

Siskaninetz, William

2004-01-01

Performance improvements in multiple-stage, single-cavity bipolar cascade light emitting diodes including reduced operating voltages, enhanced light generation, and reduced device heating are obtained...

Hybrid daylight/light-emitting diode illumination system for indoor lighting.

Science.gov (United States)

Ge, Aiming; Qiu, Peng; Cai, Jinlin; Wang, Wei; Wang, Junwei

2014-03-20

A hybrid illumination method using both daylight and light-emitting diodes (LEDs) for indoor lighting is presented in this study. The daylight can be introduced into the indoor space by a panel-integration system. The daylight part and LEDs are combined within a specific luminaire that can provide uniform illumination. The LEDs can be turned on and dimmed through closed-loop control when the daylight illuminance is inadequate. We simulated the illumination and calculated the indoor lighting efficiency of our hybrid daylight and LED lighting system, and compared this with that of LED and fluorescent lighting systems. Simulation results show that the efficiency of the hybrid daylight/LED illumination method is better than that of LED and traditional lighting systems, under the same lighting conditions and lighting time; the method has hybrid lighting average energy savings of T5 66.28%, and that of the LEDs is 41.62%.

Phosphorescence white organic light-emitting diodes with single emitting layer based on isoquinolinefluorene-carbazole containing host.

Science.gov (United States)

Koo, Ja Ryong; Lee, Seok Jae; Hyung, Gun Woo; Kim, Bo Young; Shin, Hyun Su; Lee, Kum Hee; Yoon, Seung Soo; Kim, Woo Young; Kim, Young Kwan

2013-03-01

We have demonstrated a stable phosphorescent white organic light-emitting diodes (WOLEDs) using an orange emitter, Bis(5-benzoyl-2-(4-fluorophenyl)pyridinato-C,N) iridium(III)acetylacetonate [(Bz4Fppy)2Ir(III)acac] doped into a newly synthesized blue host material, 2-(carbazol-9-yl)-7-(isoquinolin-1-yl)-9,9-diethylfluorene (CzFliq). When 1 wt.% (Bz4Fppy)2Ir(III)acac was doped into emitting layer, it was realized an improved EL performance and a pure white color in the OLED. The optimum WOLED showed maximum values as a luminous efficiency of 10.14 cd/A, a power efficiency of 10.24 Im/W, a peak external quantum efficiency 4.07%, and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39) at 8 V.

SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P

Directory of Open Access Journals (Sweden)

N. K. Zhumashev

2016-01-01

Full Text Available Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the ways of increasing the diode efficiency. Methods. The heterostructures were grown from metal-organic chemical compounds with the use of vapor-phase epitaxial technique. The spectra were recorded under pulse excitation with the use of computer-controlled installation employing MDR-23 grating monochromator and a lock-in amplifier. InSb photodiode was used as a detector. Comparative study of electroluminescence spectra of the diodes was carried out at the temperatures equal to 300 K and 77 K. We compared the obtained data with the calculation results of the band diagrams of the heterostructures. Main Results. As a result of comparative study of the electroluminescence spectra of the diodes recorded at 300 K and 77 K we have established that increasing of their efficiency is hindered by substantial influence of Auger recombination. For the first time at 77 К we have observed the effect of stimulated emission from InAsSb active layer in light-emitting structures made of InAs/InAsSb/InAsSbP. For heterostructures with quantum wells InAs/(InAs/InAsSb/InAsSbP we have found out that at 77 К the carrier recombination occurs outside quantum wells, which points out to the insufficient carrier localization in the active layer. Thus, we have shown that the efficiency of mid-infrared light-emitting diodes based on InAs(Sb,P can be increased via suppression of Auger-recombination and improvement of carrier localization in the active region. Practical Relevance. The results of the study can be used for development of heterostructures for mid-infrared light-emitting diodes.

Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films

Directory of Open Access Journals (Sweden)

Zhi Li

2013-04-01

Full Text Available Incorporating Ag nanowires with graphene resulted in improved electrical conductivity and enhanced contact properties between graphene and p-GaN. The graphene/AgNWs hybrid films exhibited high transmittance and lower sheet resistance compared to bare graphene. The specific contact resistance between graphene and p-GaN reduced nearly an order of magnitude with the introduction of AgNWs. As a result, light emitting diodes based on the hybrid films showed 44% lower forward voltage and 2-fold higher light output power. The enhanced performance was attributed to the bridging by AgNWs of cracks, grain boundaries in graphene and the reduction of Schottky barrier height at graphene/ p-GaN interface.

High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

Energy Technology Data Exchange (ETDEWEB)

Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

2011-09-16

A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

The effects of light-emitting diode lighting on greenhouse plant growth and quality

Directory of Open Access Journals (Sweden)

Margit Olle

2013-06-01

Full Text Available The aim of this study is to present the light emitting diode (LED technology for greenhouse plant lighting and to give an overview about LED light effects on photosynthetic indices, growth, yield and nutritional value in green vegetables and tomato, cucumber, sweet pepper transplants. The sole LED lighting, applied in closed growth chambers, as well as combinations of LED wavelengths with conventional light sources, fluorescent and high pressure sodium lamp light, and natural illumination in greenhouses are overviewed. Red and blue light are basal in the lighting spectra for green vegetables and tomato, cucumber, and pepper transplants; far red light, important for photomorphogenetic processes in plants also results in growth promotion. However, theoretically unprofitable spectral parts as green or yellow also have significant physiological effects on investigated plants. Presented results disclose the variability of light spectral effects on different plant species and different physiological indices.

Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

International Nuclear Information System (INIS)

Huang, H.W.; Lin, C.H.; Huang, J.K.; Lee, K.Y.; Lin, C.F.; Yu, C.C.; Tsai, J.Y.; Hsueh, R.; Kuo, H.C.; Wang, S.C.

2009-01-01

In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20 mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

Polymer Light-Emitting Diode Prepared by Floating-Off Film-Transfer Technique

KAUST Repository

Park, Jihoon; Kim, Eugene

2015-01-01

© 2015 Copyright Taylor & Francis Group, LLC. Floating-off film-transfer technique was used for the formation of semiconducting polymer multi-layers and the effect on the performance of polymer light-emitting diode (PLED) was studied. This method

Exciplex-Forming Co-Host-Based Red Phosphorescent Organic Light-Emitting Diodes with Long Operational Stability and High Efficiency.

Science.gov (United States)

Lee, Jeong-Hwan; Shin, Hyun; Kim, Jae-Min; Kim, Kwon-Hyeon; Kim, Jang-Joo

2017-02-01

The use of exciplex forming cohosts and phosphors incredibly boosts the efficiency of organic light-emitting diodes (OLEDs) by providing a barrier-free charge injection into an emitting layer and a broad recombination zone. However, most of the efficient OLEDs based on the exciplex forming cohosts has suffered from the short operational lifetime. Here, we demonstrated phosphorescent OLEDs (PhOLEDs) having both high efficiency and long lifetime by using a new exciplex forming cohost composed of N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) and (1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) (PO-T2T). The red-emitting PhOLEDs using the exciplex forming cohost achieved a maximum external quantum efficiency (EQE) of 34.1% and power efficiency of 62.2 lm W 1- with low operating voltages and low efficiency roll-offs. More importantly, the device demonstrated a long lifetime around 2249 h from 1000 cd m -2 to 900 cd m -2 (LT 90 ) under a continuous flow of constant current. The efficiencies of the devices are the highest for red OLEDs with an LT 90 > 1000 h.

Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

Science.gov (United States)

Lacroce, Nicholas; Liu, Guangyu; Tan, Chee-Keong; Arif, Ronald A.; Lee, Soo Min; Tansu, Nelson

2015-03-01

Achieving high uniformity in growths and device characteristics of InGaN-based light-emitting diodes (LEDs) is important for large scale manufacturing. Dopant activation and maintaining control of variables affecting dopant activation are critical steps in the InGaN-based light emitting diodes (LEDs) fabrication process. In the epitaxy of large scale production LEDs, in-situ post-growth annealing is used for activating the Mg acceptor dopant in the p-AlGaN and p-GaN of the LEDs. However, the annealing temperature varies with respect to position in the reactor chamber, leading to severe uniform dopant activation issue across the devices. Thus, it is important to understand how the temperature gradient and the resulting variance in Mg acceptor activation will alter the device properties. In this work, we examine the effect of varying p-type doping levels in the p-GaN layers and AlGaN electron blocking layer of the GaN LEDs on the optoelectronic properties including the band profile, carrier concentration, current density, output power and quantum efficiency. By understanding the variations and its effect, the identification of the most critical p-type doping layer strategies to address this variation will be clarified.

Determination on the Coefficient of Thermal Expansion in High-Power InGaN-based Light-emitting Diodes by Optical Coherence Tomography.

Science.gov (United States)

Lee, Ya-Ju; Chou, Chun-Yang; Huang, Chun-Ying; Yao, Yung-Chi; Haung, Yi-Kai; Tsai, Meng-Tsan

2017-10-31

The coefficient of thermal expansion (CTE) is a physical quantity that indicates the thermal expansion value of a material upon heating. For advanced thermal management, the accurate and immediate determination of the CTE of packaging materials is gaining importance because the demand for high-power lighting-emitting diodes (LEDs) is currently increasing. In this study, we used optical coherence tomography (OCT) to measure the CTE of an InGaN-based (λ = 450 nm) high-power LED encapsulated in polystyrene resin. The distances between individual interfaces of the OCT images were observed and recorded to derive the instantaneous CTE of the packaged LED under different injected currents. The LED junction temperature at different injected currents was established with the forward voltage method. Accordingly, the measured instantaneous CTE of polystyrene resin varied from 5.86 × 10 -5  °C -1 to 14.10 × 10 -5  °C -1 in the junction temperature range 25-225 °C and exhibited a uniform distribution in an OCT scanning area of 200 × 200 μm. Most importantly, this work validates the hypothesis that OCT can provide an alternative way to directly and nondestructively determine the spatially resolved CTE of the packaged LED device, which offers significant advantages over traditional CTE measurement techniques.

Arbitrary helicity control of circularly polarized light from lateral-type spin-polarized light-emitting diodes at room temperature

Science.gov (United States)

Nishizawa, Nozomi; Aoyama, Masaki; Roca, Ronel C.; Nishibayashi, Kazuhiro; Munekata, Hiro

2018-05-01

We demonstrate arbitrary helicity control of circularly polarized light (CPL) emitted at room temperature from the cleaved side facet of a lateral-type spin-polarized light-emitting diode (spin-LED) with two ferromagnetic electrodes in an antiparallel magnetization configuration. Driving alternate currents through the two electrodes results in polarization switching of CPL with frequencies up to 100 kHz. Furthermore, tuning the current density ratio in the two electrodes enables manipulation of the degree of circular polarization. These results demonstrate arbitrary electrical control of polarization with high speed, which is required for the practical use of lateral-type spin-LEDs as monolithic CPL light sources.

Transparent Heat-Resistant PMMA Copolymers for Packing Light-Emitting Diode Materials

Directory of Open Access Journals (Sweden)

Shu-Ling Yeh

2015-07-01

Full Text Available Transparent and heat-resistant poly(methyl methacrylate copolymers were synthesized by bulk polymerizing methyl methacrylate (MMA, isobornyl methacrylate (IBMA, and methacrylamide (MAA monomers. Copolymerization was performed using a chain transfer agent to investigate the molecular weight changes of these copolymers, which exhibited advantages including a low molecular weight distribution, excellent optical properties, high transparency, high glass transition temperature, low moisture absorption, and pellets that can be readily mass produced by using extrusion or jet injection for packing light-emitting diode materials.

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

International Nuclear Information System (INIS)

Wen Feng; Liu Deming; Huang Lirong

2010-01-01

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Wen Feng; Liu Deming; Huang Lirong, E-mail: hlr5649@163.co [Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2010-10-15

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Lai Wang

2017-10-01

Full Text Available Efficiency droop in GaN-based light emitting diodes (LEDs under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed.

Widely Tunable High-Power Tapered Diode Laser at 1060 nm

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Sumpf, Bernd; Erbert, Götz

2011-01-01

We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser...... operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range....

An Exciplex Host for Deep-Blue Phosphorescent Organic Light-Emitting Diodes.

Science.gov (United States)

Lim, Hyoungcheol; Shin, Hyun; Kim, Kwon-Hyeon; Yoo, Seung-Jun; Huh, Jin-Suk; Kim, Jang-Joo

2017-11-01

The use of exciplex hosts is attractive for high-performance phosphorescent organic light-emitting diodes (PhOLEDs) and thermally activated delayed fluorescence OLEDs, which have high external quantum efficiency, low driving voltage, and low efficiency roll-off. However, exciplex hosts for deep-blue OLEDs have not yet been reported because of the difficulties in identifying suitable molecules. Here, we report a deep-blue-emitting exciplex system with an exciplex energy of 3.0 eV. It is composed of a carbazole-based hole-transporting material (mCP) and a phosphine-oxide-based electron-transporting material (BM-A10). The blue PhOLEDs exhibited maximum external quantum efficiency of 24% with CIE coordinates of (0.15, 0.21) and longer lifetime than the single host devices.

Recent Advances in Conjugated Polymers for Light Emitting Devices

Science.gov (United States)

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Electroplex as a New Concept of Universal Host for Improved Efficiency and Lifetime in Red, Yellow, Green, and Blue Phosphorescent Organic Light-Emitting Diodes.

Science.gov (United States)

Song, Wook; Lee, Jun Yeob; Cho, Yong Joo; Yu, Hyeonghwa; Aziz, Hany; Lee, Kang Mun

2018-02-01

A new concept of host, electroplex host, is developed for high efficiency and long lifetime phosphorescent organic light-emitting diodes by mixing two host materials generating an electroplex under an electric field. A carbazole-type host and a triazine-type host are selected as the host materials to form the electroplex host. The electroplex host is found to induce light emission through an energy transfer process rather than charge trapping, and universally improves the lifetime of red, yellow, green, and blue phosphorescent organic light-emitting diodes by more than four times. Furthermore, the electroplex host shows much longer lifetime than a common exciplex host. This is the first demonstration of using the electroplex as the host of high efficiency and long lifetime phosphorescent organic light-emitting diodes.

White-light-emitting diode based on a single-layer polymer

Science.gov (United States)

Wang, B. Z.; Zhang, X. P.; Liu, H. M.

2013-05-01

A broad-band light-emitting diode was achieved in a single-layer device based on pure poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFB). Electromer emission was observed in the red with a center wavelength of about 620 nm in electroluminescence (EL) spectrum. This kind of emission exhibits strong dependence on the thickness of the PFB layer, so that the shape of the EL spectrum may be adjusted through changing the thickness of the active polymer layer to balance between the intrinsic PFB emission in the blue and the electromer emission in the red. Thus, white light emission may be achieved from such a single-layer single-material diode.

Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

Directory of Open Access Journals (Sweden)

O. M. Hontaruk

2015-04-01

Full Text Available Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К. Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN1 pairs.

Optimization of freeform lightpipes for light-emitting-diode projectors.

Science.gov (United States)

Fournier, Florian; Rolland, Jannick

2008-03-01

Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are compared to optimized freeform shapes in terms of transmission efficiency and spatial uniformity. We show that the simultaneous optimization of the output surface and the profile shape yields transmission efficiency within the étendue limit up to 90% and spatial uniformity higher than 95%, even for compact sizes. The optimization process involves a manual study of the trends for different shapes and the use of an optimization algorithm to further improve the performance of the freeform lightpipe.

High color rendering index white organic light-emitting diode using levofloxacin as blue emitter

International Nuclear Information System (INIS)

Miao Yan-Qin; Zhang Ai-Qin; Li Yuan-Hao; Wang Hua; Jia Hu-Sheng; Liu Xu-Guang; Gao Zhi-Xiang; Tsuboi Taijuf

2015-01-01

Levofloxacin (LOFX), which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes (OLEDs). In this paper, the fabricated white OLED contains a 452-nm blue emitting layer (thickness of 30 nm) with 1 wt% LOFX doped in CBP (4,4’-bis(carbazol-9-yl)biphenyl) host and a 584-nm orange emitting layer (thickness of 10 nm) with 0.8 wt% DCJTB (4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7, 7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran) doped in CBP, which are separated by a 20-nm-thick buffer layer of TPBi (2,2’,2”-(benzene-1,3,5-triyl)-tri(1-phenyl-1H-benzimidazole). A high color rendering index (CRI) of 84.5 and CIE chromaticity coordinates of (0.33, 0.32), which is close to ideal white emission CIE (0.333, 0.333), are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs. (paper)

Tandem white organic light-emitting diodes adopting a C60:rubrene charge generation layer

International Nuclear Information System (INIS)

Bi Wen-Tao; Wu Xiao-Ming; Hua Yu-Lin; Sun Jin-E; Xiao Zhi-Hui; Wang Li; Yin Shou-Gen

2014-01-01

Organic bulk heterojunction fullerence (C 60 ) doped 5, 6, 11, 12-tetraphenylnaphthacene (rubrene) as the high quality charge generation layer (CGL) with high transparency and superior charge generating capability for tandem organic light emitting diodes (OLEDs) is developed. This CGL shows excellent optical transparency about 90%, which can reduce the optical interference effect formed in tandem OLEDs. There is a stable white light emission including 468 nm and 500 nm peaks from the blue emitting layer and 620 nm peak from the red emitting layer in tandem white OLEDs. A high efficiency of about 17.4 cd/A and CIE coordinates of (0.40, 0.35) at 100 cd/m 2 and (0.36, 0.34) at 1000 cd/m 2 have been demonstrated by employing the developed CGL, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Paired emitter-detector light emitting diodes for the measurement of lead(II) and cadmium(II)

International Nuclear Information System (INIS)

Lau, K.-T.; McHugh, Eimear; Baldwin, Susan; Diamond, Dermot

2006-01-01

A transmittance mode optical device based on using a reverse biased light emitting diode (LED) as light detector has been developed for colorimetric analysis. This new optical device was validated with bromocresol green dye for absorbance measurements before being employed for detecting cadmium(II) and lead(II) in water. Results show that the performance of this LED-based device is comparable to much more expensive bench top UV-vis instruments, but with the advantages of being low cost, low power and simple to operate

Paired emitter-detector light emitting diodes for the measurement of lead(II) and cadmium(II)

Energy Technology Data Exchange (ETDEWEB)

Lau, K.-T. [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland)]. E-mail: kim.lau@dcu.ie; McHugh, Eimear [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland); Baldwin, Susan [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland); Diamond, Dermot [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland)]. E-mail: Dermot.diamond@dcu.ie

2006-05-31

A transmittance mode optical device based on using a reverse biased light emitting diode (LED) as light detector has been developed for colorimetric analysis. This new optical device was validated with bromocresol green dye for absorbance measurements before being employed for detecting cadmium(II) and lead(II) in water. Results show that the performance of this LED-based device is comparable to much more expensive bench top UV-vis instruments, but with the advantages of being low cost, low power and simple to operate.

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-04-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

Inkjet printing the three organic functional layers of two-colored organic light emitting diodes

International Nuclear Information System (INIS)

Coenen, Michiel J.J.; Slaats, Thijs M.W.L.; Eggenhuisen, Tamara M.; Groen, Pim

2015-01-01

Inkjet printing allows for the roll-2-roll fabrication of organic electronic devices at an industrial scale. In this paper we demonstrate the fabrication of two-colored organic light emitting diodes (OLEDs) in which three adjacent organic device layers were inkjet printed from halogen free inks. The resulting devices demonstrate the possibilities offered by this technique for the fabrication of OLEDs for signage and personalized electronics. - Highlights: • Two-colored organic light emitting diodes with 3 inkjet printed device layers were fabricated. • All materials were printed from halogen free inks. • Inkjet printing of emissive materials is suitable for signage applications

Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Bing Xu

2014-01-01

Full Text Available We investigated the effects of pre-TMIn treatment on the optical properties of green light emitting diodes (LEDs. Although pre-TMIn treatment did not affect the epitaxial structure of quantum wells, it significantly improved the quality of the surface morphology relative to that of the untreated sample. Indium cluster can be seen by high-resolution transmission electron microscopy (HR-TEM, which is the explanation for the red-shift of photoluminescence (PL. Time-resolved photoluminescence measurements indicated that the sample prepared with pre-TMIn treatment had a shorter radiative decay time. As a result, the light output power of the treated green LED was higher than that of the conventional untreated one. Thus, pre-TMIn treatment appears to be a simple and efficient means of improving the performance of green LEDs.

Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography

Directory of Open Access Journals (Sweden)

Kui Wu

2013-09-01

Full Text Available The InGaN multiple quantum well light-emitting diodes (LEDs with different sizes of indium-tin-oxide (ITO nanobowl photonic crystal (PhC structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP of PhC LEDs (at 350 mA has been enhanced by 63.5% and the emission divergence exhibits a 28.8° reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD has also been performed for light extraction and emission characteristics, which is consistent with the experimental results.

Improving the Stability of Metal Halide Perovskite Materials and Light-Emitting Diodes.

Science.gov (United States)

Cho, Himchan; Kim, Young-Hoon; Wolf, Christoph; Lee, Hyeon-Dong; Lee, Tae-Woo

2018-01-25

Metal halide perovskites (MHPs) have numerous advantages as light emitters such as high photoluminescence quantum efficiency with a direct bandgap, very narrow emission linewidth, high charge-carrier mobility, low energetic disorder, solution processability, simple color tuning, and low material cost. Based on these advantages, MHPs have recently shown unprecedented radical progress (maximum current efficiency from 0.3 to 42.9 cd A -1 ) in the field of light-emitting diodes. However, perovskite light-emitting diodes (PeLEDs) suffer from intrinsic instability of MHP materials and instability arising from the operation of the PeLEDs. Recently, many researchers have devoted efforts to overcome these instabilities. Here, the origins of the instability in PeLEDs are reviewed by categorizing it into two types: instability of (i) the MHP materials and (ii) the constituent layers and interfaces in PeLED devices. Then, the strategies to improve the stability of MHP materials and PeLEDs are critically reviewed, such as A-site cation engineering, Ruddlesden-Popper phase, suppression of ion migration with additives and blocking layers, fabrication of uniform bulk polycrystalline MHP layers, and fabrication of stable MHP nanoparticles. Based on this review of recent advances, future research directions and an outlook of PeLEDs for display applications are suggested. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Luminescence and squeezing of a superconducting light-emitting diode

Science.gov (United States)

Hlobil, Patrik; Orth, Peter P.

2015-05-01

We investigate a semiconductor p -n junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a sharp frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence that results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. We show that the squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This reveals how the macroscopic coherence of a superconductor can be used to control the properties of light.

Organic light-emitting diodes with direct contact-printed red, green, blue, and white light-emitting layers

Science.gov (United States)

Chen, Sun-Zen; Peng, Shiang-Hau; Ting, Tzu-Yu; Wu, Po-Shien; Lin, Chun-Hao; Chang, Chin-Yeh; Shyue, Jing-Jong; Jou, Jwo-Huei

2012-10-01

We demonstrate the feasibility of using direct contact-printing in the fabrication of monochromatic and polychromatic organic light-emitting diodes (OLEDs). Bright devices with red, green, blue, and white contact-printed light-emitting layers with a respective maximum luminance of 29 000, 29 000, 4000, and 18 000 cd/m2 were obtained with sound film integrity by blending a polymeric host into a molecular host. For the red OLED as example, the maximum luminance was decreased from 29 000 to 5000 cd/m2 as only the polymeric host was used, or decreased to 7000 cd/m2 as only the molecular host was used. The markedly improved device performance achieved in the devices with blended hosts may be attributed to the employed polymeric host that contributed a good film-forming character, and the molecular host that contributed a good electroluminescence character.

Synthesis and electroluminescent properties of blue emitting materials based on arylamine-substituted diphenylvinylbiphenyl derivatives for organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lee, Kum Hee; You, Jae Nam; Won, Jiyeon; Lee, Jin Yong [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Seo, Ji Hoon [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

2011-10-31

This paper reports the synthesis and electroluminescent properties of a series of blue emitting materials with arylamine and diphenylvinylbiphenyl groups for applications to efficient blue organic light-emitting diodes (OLEDs). All devices exhibited blue electroluminescence with electroluminescent properties that were quite sensitive to the structural features of the dopants in the emitting layers. In particular, the device using dopant 4 exhibited sky-blue emission with a maximum luminance, luminance efficiency, power efficiency, external quantum efficiency and CIE coordinates of 39,000 cd/m{sup 2}, 12.3 cd/A, 7.45 lm/W, 7.71% at 20 mA/cm{sup 2} and (x = 0.17, y = 0.31) at 8 V, respectively. In addition, a blue OLED using dopant 2 with CIE coordinates (x = 0.16, y = 0.18) at 8 V exhibited a luminous efficiency, power efficiency and external quantum efficiency of 4.39 cd/A, 2.46 lm/W and 2.97% at 20 mA/cm{sup 2}, respectively.

Organic light emitting diodes on ITO-free polymer anodes

Energy Technology Data Exchange (ETDEWEB)

Fehse, Karsten; Schwartz, Gregor; Walzer, Karsten; Leo, Karl [Institut fuer Angewandte Photophysik, TU Dresden, D-01062 Dresden (Germany)

2007-07-01

The high material cost of indium, being the main component of the commonly used indium-tin-oxide anodes (ITO) in organic light emitting diodes (OLEDs), is an obstacle for the production of efficient low-cost OLEDs. Therefore, new anode materials are needed for large scale OLED production. Recently, we demonstrated that the polymer PEDOT:PSS can substitute ITO as anode. Another highly conductive polymer is polyaniline (PANI) that provides 200 S/cm with a work function of 4.8 eV. In this study, we use PANI as anode for OLEDs (without ITO layer underneath the polymer) with electrically doped hole- and electron transport layers and intrinsic materials in between. Fluorescent blue (Spiro-DPVBi) as well as phosphorescent green (Ir(ppy){sub 3}) and red emitters (Ir(MDQ){sub 2}(acac)) were used for single colour and white OLEDs. Green single and double emission OLEDs achieve device efficiencies of 34 lm/W and 40.7 lm/W, respectively. The white OLED shows a power efficiency of 8.9 lm/W at 1000 cd/m{sup 2} with CIE coordinates of (0.42/0.39).

Origin of colour stability in blue/orange/blue stacked phosphorescent white organic light-emitting diodes

International Nuclear Information System (INIS)

Kim, Sung Hyun; Jang, Jyongsik; Yook, Kyoung Soo; Lee, Jun Yeob

2009-01-01

The origin of colour stability in phosphorescent white organic light-emitting diodes (PHWOLEDs) with a blue/orange/blue stacked emitting structure was studied by monitoring the change in a recombination zone. A balanced recombination zone shift between the blue and the orange light-emitting layers was found to be responsible for the colour stability in the blue/orange/blue stacked PHWOLEDs.

Highly efficient red phosphorescent organic light-emitting diodes based on solution processed emissive layer

International Nuclear Information System (INIS)

Liu, Baiquan; Xu, Miao; Tao, Hong; Ying, Lei; Zou, Jianhua; Wu, Hongbin; Peng, Junbiao

2013-01-01

Highly efficient red phosphorescent organic polymer light-emitting diodes (PhOLEDs) were fabricated based on a solution-processed small-molecule host 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) by doping an iridium complex, tris(1-(2,6-dimethylphenoxy)-4-(4-chlorophenyl)phthalazine)iridium (III) (Ir(MPCPPZ) 3 ). A hole blocking layer 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBI) with a function of electron transport was thermally deposited onto the top of CBP layer. The diode with the structure of ITO/PEDOT:PSS (50 nm)/CBP:Ir(MPCPPZ) 3 (55 nm)/TPBI (30 nm)/Ba (4 nm)/Al (120 nm) showed an external quantum efficiency (QE ext ) of 19.3% and luminous efficiency (LE) of 18.3 cd/A at a current density of 0.16 mA/cm 2 , and Commission International de I'Eclairage (CIE) coordinates of (0.607, 0.375). It was suggested that the diodes using TPBI layer exhibited nearly 100% internal quantum efficiency and one order magnitude enhanced LE or QE ext efficiencies. -- Highlights: • Efficient red PhOLEDs based on a solution-processed small-molecule host were fabricated. • By altering volume ratio of chloroform/chlorobenzene solvent, we got best film quality of CBP. • EQE of the diode was 19.3%, indicating nearly 100% internal quantum yield was achieved

Microcontact printing of self-assembled monolayers to pattern the light-emission of polymeric light-emitting diodes

NARCIS (Netherlands)

Brondijk, J. J.; Li, X.; Akkerman, H. B.; Blom, P. W. M.; de Boer, B.

By patterning a self-assembled monolayer (SAM) of thiolated molecules with opposing dipole moments on a gold anode of a polymer light-emitting diode (PLED), the charge injection and, therefore, the light-emission of the device can be controlled with a micrometer-scale resolution. Gold surfaces were

Surface plasmon enhanced organic light emitting diodes by gold nanoparticles with different sizes

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-11-30

Highlights: • Different varieties, sizes, and shapes for nanoparticles will generate different surface plasmon resonance effects in the devices. • The red-shift phenomenon for absorption peaks is because of an increasing contribution of higher-order plasmon modes for the larger gold nanoparticles. • The mobility of electrons in the electron-transport layer of organic light-emitting diodes is a few orders of magnitude lower than that of holes in the hole-transport layer of organic light-emitting diodes. - Abstract: The influence of gold nanoparticles (GNPs) with different sizes doped into (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) (PEDOT:PSS) on the performance of organic light-emitting diodes is investigated in this study. The current efficiency of the device, at a current density of 145 mA/cm, with PEDOT:PSS doped with GNPs of 8 nm is about 1.57 times higher than that of the device with prime PEDOT:PSS because the absorption peak of GNPs is closest to the photoluminescence peak of the emission layer, resulting in maximum surface plasmon resonance effect in the device. In addition, the surface-enhanced Raman scattering spectroscopy also reveals the maximum surface plasmon resonance effect in the device when the mean particle size of GNPs is 8 nm.

Highly efficient inverted top emitting organic light emitting diodes using a transparent top electrode with color stability on viewing angle

Energy Technology Data Exchange (ETDEWEB)

Kim, Jung-Bum; Lee, Jeong-Hwan; Moon, Chang-Ki; Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

2014-02-17

We report a highly efficient phosphorescent green inverted top emitting organic light emitting diode with excellent color stability by using the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile/indium zinc oxide top electrode and bis(2-phenylpyridine)iridium(III) acetylacetonate as the emitter in an exciplex forming co-host system. The device shows a high external quantum efficiency of 23.4% at 1000 cd/m{sup 2} corresponding to a current efficiency of 110 cd/A, low efficiency roll-off with 21% at 10 000 cd/m{sup 2} and low turn on voltage of 2.4 V. Especially, the device showed very small color change with the variation of Δx = 0.02, Δy = 0.02 in the CIE 1931 coordinates as the viewing angle changes from 0° to 60°. The performance of the device is superior to that of the metal/metal cavity structured device.

A comparison of commercial light-emitting diode baited suction traps for surveillance of Culicoides in northern Europe.

Science.gov (United States)

Hope, Andrew; Gubbins, Simon; Sanders, Christopher; Denison, Eric; Barber, James; Stubbins, Francesca; Baylis, Matthew; Carpenter, Simon

2015-04-22

The response of Culicoides biting midges (Diptera: Ceratopogonidae) to artificial light sources has led to the use of light-suction traps in surveillance programmes. Recent integration of light emitting diodes (LED) in traps improves flexibility in trapping through reduced power requirements and also allows the wavelength of light used for trapping to be customized. This study investigates the responses of Culicoides to LED light-suction traps emitting different wavelengths of light to make recommendations for use in surveillance. The abundance and diversity of Culicoides collected using commercially available traps fitted with Light Emitting Diode (LED) platforms emitting ultraviolet (UV) (390 nm wavelength), blue (430 nm), green (570 nm), yellow (590 nm), red (660 nm) or white light (425 nm - 750 nm with peaks at 450 nm and 580 nm) were compared. A Centre for Disease Control (CDC) UV light-suction trap was also included within the experimental design which was fitted with a 4 watt UV tube (320-420 nm). Generalised linear models with negative binomial error structure and log-link function were used to compare trap abundance according to LED colour, meteorological conditions and seasonality. The experiment was conducted over 49 nights with 42,766 Culicoides caught in 329 collections. Culicoides obsoletus Meigen and Culicoides scoticus Downes and Kettle responded indiscriminately to all wavelengths of LED used with the exception of red which was significantly less attractive. In contrast, Culicoides dewulfi Goetghebuer and Culicoides pulicaris Linnaeus were found in significantly greater numbers in the green LED trap than in the UV LED trap. The LED traps collected significantly fewer Culicoides than the standard CDC UV light-suction trap. Catches of Culicoides were reduced in LED traps when compared to the standard CDC UV trap, however, their reduced power requirement and small size fulfils a requirement for trapping in logistically challenging areas or where many

Non-doped white organic light-emitting diodes based on aggregation-induced emission

Energy Technology Data Exchange (ETDEWEB)

Chen Shuming; Kwok, Hoi Sing [Center for Display Research, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Zhao Zujin; Tang, Ben Zhong, E-mail: eekwok@ust.h [Department of Chemistry, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2010-03-10

Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A{sup -1}, 4 lm W{sup -1} and brightness of 18 000 cd m{sup -2} have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

Non-doped white organic light-emitting diodes based on aggregation-induced emission

International Nuclear Information System (INIS)

Chen Shuming; Kwok, Hoi Sing; Zhao Zujin; Tang, Ben Zhong

2010-01-01

Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A -1 , 4 lm W -1 and brightness of 18 000 cd m -2 have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

Effect of Stepwise Doping on Lifetime and Efficiency of Blue and White Phosphorescent Organic Light Emitting Diodes.

Science.gov (United States)

Lee, Song Eun; Lee, Ho Won; Lee, Seok Jae; Koo, Ja-ryong; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Hye Jeong; Yoon, Seung Soo; Kim, Young Kwan

2015-02-01

We investigated a light emission mechanism of blue phosphorescent organic light emitting diodes (PHOLEDs), using a stepwise doping profile of 2, 8, and 14 wt.% within the emitting layer (EML). We fabricated several blue PHOLEDs with phosphorescent blue emitter iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,C2]picolinate doped in N,N'-dicarbazolyl-3,5-benzene as a p-type host material. A blue PHOLED with the highest doping concentration as part of the EML close to an electron transporting layer showed a maximum luminous efficiency of 20.74 cd/A, and a maximum external quantum efficiency of 10.52%. This can be explained by effective electron injection through a highly doped EML side. Additionally, a white OLED based on the doping profile was fabricated with two thin red EMLs within a blue EML maintaining a thickness of 30 nm for the entire EML. Keywords: Blue Phosphorescent Organic Light Emitting Diodes, Stepwise Doping Structure, Charge Trapping Effect.

Aggregation in organic light emitting diodes

Science.gov (United States)

Meyer, Abigail

Organic light emitting diode (OLED) technology has great potential for becoming a solid state lighting source. However, there are inefficiencies in OLED devices that need to be understood. Since these inefficiencies occur on a nanometer scale there is a need for structural data on this length scale in three dimensions which has been unattainable until now. Local Electron Atom Probe (LEAP), a specific implementation of Atom Probe Tomography (APT), is used in this work to acquire morphology data in three dimensions on a nanometer scale with much better chemical resolution than is previously seen. Before analyzing LEAP data, simulations were used to investigate how detector efficiency, sample size and cluster size affect data analysis which is done using radial distribution functions (RDFs). Data is reconstructed using the LEAP software which provides mass and position data. Two samples were then analyzed, 3% DCM2 in C60 and 2% DCM2 in Alq3. Analysis of both samples indicated little to no clustering was present in this system.

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

KAUST Repository

Hsiao, Yu Hsuan; Tsai, Meng Lin; He, Jr-Hau

2015-01-01

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

NARCIS (Netherlands)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-01-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the

Photovoltaic powered ultraviolet and visible light-emitting diodes for sustainable point-of-use disinfection of drinking waters.

Science.gov (United States)

Lui, Gough Yumu; Roser, David; Corkish, Richard; Ashbolt, Nicholas; Jagals, Paul; Stuetz, Richard

2014-09-15

For many decades, populations in rural and remote developing regions will be unable to access centralised piped potable water supplies, and indeed, decentralised options may be more sustainable. Accordingly, improved household point-of-use (POU) disinfection technologies are urgently needed. Compared to alternatives, ultraviolet (UV) light disinfection is very attractive because of its efficacy against all pathogen groups and minimal operational consumables. Though mercury arc lamp technology is very efficient, it requires frequent lamp replacement, involves a toxic heavy metal, and their quartz envelopes and sleeves are expensive, fragile and require regular cleaning. An emerging alternative is semiconductor-based units where UV light emitting diodes (UV-LEDs) are powered by photovoltaics (PV). Our review charts the development of these two technologies, their current status, and challenges to their integration and POU application. It explores the themes of UV-C-LEDs, non-UV-C LED technology (e.g. UV-A, visible light, Advanced Oxidation), PV power supplies, PV/LED integration and POU suitability. While UV-C LED technology should mature in the next 10 years, research is also needed to address other unresolved barriers to in situ application as well as emerging research opportunities especially UV-A, photocatalyst/photosensitiser use and pulsed emission options. Copyright © 2014 Elsevier B.V. All rights reserved.

Determination of the trap-assisted recombination strength in polymer light emitting diodes

NARCIS (Netherlands)

Kuik, Martijn; Nicolai, Herman T.; Lenes, Martijn; Wetzelaer, Gert-Jan A. H.; Lu, Mingtao; Blom, Paul W. M.

2011-01-01

The recombination processes in poly(p-phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

Determination of the trap-assisted recombination strength in polymer light emitting diodes

NARCIS (Netherlands)

Kuik, M.; Nicolai, H.T.; Lenes, M.; Wetzelaer, G.-J.A.H.; Lu, M.; Blom, P.W.M.

2011-01-01

The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

Benzoporphyrin derivative and light-emitting diode for use in photodynamic therapy: Applications of space light-emitting diode technology

International Nuclear Information System (INIS)

Whelan, Harry T.; Houle, John M.; Bajic, Dawn M.; Schmidt, Meic H.; Reichert, Kenneth W. II; Meyer, Glenn A.

1998-01-01

Photodynamic therapy (PDT) is a cancer treatment modality that recently has been applied as adjuvant therapy for brain tumors. PDT consists of intravenously injecting a photosensitizer, which preferentially accumulates in tumor cells, into a patient and then activating the photosensitizer with a light source. This results in free radical generation followed by cell death. The development of more effective light sources for PDT of brain tumors has been facilitated by applications of space light-emitting diode array technology; thus permitting deeper tumor penetration of light and use of better photosensitizers. Currently, the most commonly used photosensitizer for brain tumor PDT is Photofrin registered . Photofrin registered is a heterogeneous mixture of compounds derived from hematoporphyrin. Photofrin registered is activated with a 630 nm laser light and does destroy tumor cells in animal models and humans. However, treatment failure does occur using this method. Most investigators attribute this failure to the limited penetration of brain tissue by a 630 nm laser light and to the fact that Photofrin registered has only a minor absorption peak at 630 nm, meaning that only a small fraction of the chemical is activated. Benzoporphyrin Derivative Monoacid Ring A (BPD) is a new, second generation photosensitizer that can potentially improve PDT for brain tumors. BPD has a major absorption peak at 690 nm, which gives it two distinct advantages over Photofrin registered . First, longer wavelengths of light penetrate brain tissue more easily so that larger tumors could be treated, and second, the major absorption peak means that a larger fraction of the drug is activated upon exposure to light. In the first part of this project we have studied the tumoricidal effects of BPD in vitro using 2A9 canine glioma and U373 human glioblastoma cell cultures. Using light emitting diodes (LED) with a peak emission of 688 nm as a light source, cell kill of up to 86 percent was

Topical methyl-aminolevulinate photodynamic therapy using red light-emitting diode light for treatment of multiple actinic keratoses: A randomized, double-blind, placebo-controlled study.

Science.gov (United States)

Pariser, David; Loss, Robert; Jarratt, Michael; Abramovits, William; Spencer, James; Geronemus, Roy; Bailin, Philip; Bruce, Suzanne

2008-10-01

The use of light-emitting diode light offers practical advantages in photodynamic therapy (PDT) with topical methyl-aminolevulinate (MAL) for management of actinic keratoses (AK). We sought to evaluate the efficacy of MAL PDT using red light-emitting diode light. We conducted a multicenter, double-blind, randomized study. A total of 49 patients with 363 AK lesions had 16.8% MAL cream applied under occlusion for 3 hours, and 47 patients with 360 AK lesions had vehicle cream similarly applied. The lesions were then illuminated (630 nm, light dose 37 J/cm2) with repeated treatment 1 week later. Complete lesion and patient (all lesions showing complete response) response rates were evaluated 3 months after last treatment. MAL PDT was superior (PAK. MAL PDT using red light-emitting diode light is an appropriate treatment alternative for multiple AK lesions.

Organic light-emitting diodes with a spacer enhanced exciplex emission

Science.gov (United States)

Yan, Fei; Chen, Rui; Sun, Handong; Wei Sun, Xiao

2014-04-01

By introducing a spacer molecule into the blended exciplex emissive layer, the performance of the bulk heterojunction exciplex organic light-emitting diodes (OLEDs) was improved dramatically; the maximum luminous efficiency was enhanced by about 22% from 7.9 cd/A to 9.7 cd/A, and the luminous efficiency drop was reduced by 28% at 400 mA/cm2. Besides the suppressed annihilation of exciton, the time-resolved photoluminescence measurements indicated that the spacer enhanced the delayed fluorescence through increasing the backward intersystem crossing rate from the triplet to singlet exciplex state. This method is useful for developing high performance exciplex OLEDs.

Water cooling of high power light emitting diode

DEFF Research Database (Denmark)

Sørensen, Henrik

2012-01-01

The development in light technologies for entertainment is moving towards LED based solutions. This progress is not without problems, when more than a single LED is used. The amount of generated heat is often in the same order as in a conventional discharge lamp, but the allowable operating...... temperature is much lower. In order to handle the higher specific power (W/m3) inside the LED based lamps cold plates were designed and manufactured. 6 different designs were analyzed through laboratory experiments and their performances were compared. 5 designs cover; traditional straight mini channel, S...

Organic light-emitting diodes using novel embedded al gird transparent electrodes

Science.gov (United States)

Peng, Cuiyun; Chen, Changbo; Guo, Kunping; Tian, Zhenghao; Zhu, Wenqing; Xu, Tao; Wei, Bin

2017-03-01

This work demonstrates a novel transparent electrode using embedded Al grids fabricated by a simple and cost-effective approach using photolithography and wet etching. The optical and electrical properties of Al grids versus grid geometry have been systematically investigated, it was found that Al grids exhibited a low sheet resistance of 70 Ω □-1 and a light transmission of 69% at 550 nm with advantages in terms of processing conditions and material cost as well as potential to large scale fabrication. Indium Tin Oxide-free green organic light-emitting diodes (OLED) based on Al grids transparent electrodes was demonstrated, yielding a power efficiency >15 lm W-1 and current efficiency >39 cd A-1 at a brightness of 2396 cd m-2. Furthermore, a reduced efficiency roll-off and higher brightness have been achieved compared with ITO-base device.

Medical Applications of Space Light-Emitting Diode Technology--Space Station and Beyond

Energy Technology Data Exchange (ETDEWEB)

Whelan, H.T.; Houle, J.M.; Donohoe, D.L.; Bajic, D.M.; Schmidt, M.H.; Reichert, K.W.; Weyenberg, G.T.; Larson, D.L.; Meyer, G.A.; Caviness, J.A.

1999-06-01

Space light-emitting diode (LED) technology has provided medicine with a new tool capable of delivering light deep into tissues of the body, at wavelengths which are biologically optimal for cancer treatment and wound healing. This LED technology has already flown on Space Shuttle missions, and shows promise for wound healing applications of benefit to Space Station astronauts.

Three-dimensional modeling of charge transport, injection and recombination in organic light-emitting diodes

NARCIS (Netherlands)

Holst, van der J.J.M.

2010-01-01

Organic light-emitting diodes (OLEDs) are ideally suited for lighting and display applications. Commercial OLED displays as well as OLED white-light sources are presently being introduced to the market. Essential electronic processes in OLEDs are the injection of electrons and holes into an organic

Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

International Nuclear Information System (INIS)

Wu, F.; Dawei, Z.; Shuzhen, S.; Yiming, Z.; Songlin, Z.; Jian, X.

2012-01-01

We have investigated the feasibility of employing quantum dot (QD) phosphor-based light-emitting diodes (LEDs) in aviation applications that request Night Vision Imaging Systems (NVIS) compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nano crystal QDs can be tailored by varying the nano crystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

Stolephorus sp Behavior in Different LED (Light Emitting Diode) Color and Light Intensities

Science.gov (United States)

Fitri Aristi, D. P.; Ramadanita, I. A.; Hapsari, T. D.; Susanto, A.

2018-02-01

This research aims to observe anchovy (Stolephorus sp) behavior under different LED light intensities that affect eye physiology (cell cone structure). The materials used were Stolephorus sp taken from the waters off Jepara and 13 and 10 watt light emitting diode (LED). The research method was an experiment conducted from March through August 2015 in the waters off Jepara. Data analysis of visual histology and fish respond was carried out at the fishing gear material laboratory, anatomy and cultivate. Cone cell structure (mosaic cone) of Stolephorus sp forms a connected regular square pattern with every single cone surrounded by four double cones, which indicate that anchovies are sensitive to light. The 13 watt LED (628 lux) has faster response than the 10 watt LED (531 lux) as it has wider and higher emitting intensity, which also attracts fish to gather quicker.

Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

Science.gov (United States)

Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

2006-01-01

A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from logic 1 (+5 V) to logic 0 (+1.7 V). The entire instrument provides an inherently digital output of light intensity measurements for a few cents. A light dependent resistor (LDR) modified with similar sensor membrane was also used as a comparison method. Both the LED sensor and the LDR sensor responded to various pH buffer solutions in a similar way to obtain sigmoidal curves expected of the dye. The pKa value obtained for the sensors was found to agree with the literature value.

Efficiency Drop in Green InGaN /GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

Science.gov (United States)

Auf der Maur, Matthias; Pecchia, Alessandro; Penazzi, Gabriele; Rodrigues, Walter; Di Carlo, Aldo

2016-01-01

White light emitting diodes (LEDs) based on III-nitride InGaN /GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light conversion efficiencies, it has been recently pointed out that the full potential of solid state lighting could be exploited only by color mixing approaches without employing phosphor-based wavelength conversion. Such an approach requires direct emitting LEDs of different colors, including, in particular, the green-yellow range of the visible spectrum. This range, however, suffers from a systematic drop in efficiency, known as the "green gap," whose physical origin has not been understood completely so far. In this work, we show by atomistic simulations that a consistent part of the green gap in c -plane InGaN /GaN -based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing indium content due to random fluctuations of the indium concentration naturally present in any InGaN alloy.

High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

CERN Document Server

Wuu, D S; Huang, S H; Chung, C R

2002-01-01

Dry etch of wafer-bonded AlGaInP/mirror/Si light-emitting diodes (LEDs) with planar electrodes was performed by high-density plasma using an inductively coupled plasma (ICP) etcher. The etching characteristics were investigated by varying process parameters such as Cl sub 2 /N sub 2 gas combination, chamber pressure, ICP power and substrate-bias power. The corresponding plasma properties (ion flux and dc bias), in situ measured by a Langmuir probe, show a strong relationship to the etch results. With a moderate etch rate of 1.3 mu m/min, a near vertical and smooth sidewall profile can be achieved under a Cl sub 2 /(Cl sub 2 +N sub 2) gas mixture of 0.5, ICP power of 800 W, substrate-bias power of 100 W, and chamber pressure of 0.67 Pa. Quantitative analysis of the plasma-induced damage was attempted to provide a means to study the mechanism of leakage current and brightness with various dc bias voltages (-110 to -328 V) and plasma duration (3-5 min) on the wafer-bonded LEDs. It is found that the reverse leaka...

Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

International Nuclear Information System (INIS)

Barillaro, G.; Diligenti, A.; Pieri, F.; Fuso, F.; Allegrini, M.

2001-01-01

A fabrication process, compatible with an industrial bipolar+complementary metal - oxide - semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n + /p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. [copyright] 2001 American Institute of Physics

Enhancing the performance of blue GaN-based light emitting diodes with carrier concentration adjusting layer

Energy Technology Data Exchange (ETDEWEB)

Guo, Yao; Huang, Yang; Wang, Junxi; Wang, Guohong [R& D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083,P. R. China (China); Liu, Zhiqiang, E-mail: lzq@semi.ac.cn, E-mail: spring@semi.ac.cn; Yi, Xiaoyan, E-mail: lzq@semi.ac.cn, E-mail: spring@semi.ac.cn; Li, Jinmin [R& D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083,P. R. China (China); State Key Laboratory of Solid State Lighting, Beijing 100083 (China); Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083 (China)

2016-03-15

In this work, a novel carrier concentration adjusting insertion layer for InGaN/GaN multiple quantum wells light-emitting diodes was proposed to mitigate the efficiency droop and improve optical output properties at high current density. The band diagrams and carrier distributions were investigated numerically and experimentally. The results indicate that due to the newly formed electron barrier and the adjusted built-in field near the active region, the hole injection has been improved and a better radiative recombination can be achieved. Compared to the conventional LED, the light output power of our new structure with the carrier concentration adjusting layers is enhanced by 127% at 350 mA , while the efficiency only droops to be 88.2% of its peak efficiency.

Efficient Flexible Organic/Inorganic Hybrid Perovskite Light-Emitting Diodes Based on Graphene Anode.

Science.gov (United States)

Seo, Hong-Kyu; Kim, Hobeom; Lee, Jaeho; Park, Min-Ho; Jeong, Su-Hun; Kim, Young-Hoon; Kwon, Sung-Joo; Han, Tae-Hee; Yoo, Seunghyup; Lee, Tae-Woo

2017-03-01

Highly efficient organic/inorganic hybrid perovskite light-emitting diodes (PeLEDs) based on graphene anode are developed for the first time. Chemically inert graphene avoids quenching of excitons by diffused metal atom species from indium tin oxide. The flexible PeLEDs with graphene anode on plastic substrate show good bending stability; they provide an alternative and reliable flexible electrode for highly efficient flexible PeLEDs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-01-01

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\bar{2}\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.

2016-01-26

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Electrical pulse burnout testing of light-emitting diodes

International Nuclear Information System (INIS)

Kalma, A.H.; Fischer, C.J.

1975-01-01

Electrical pulse burnout thresholds were measured in GaAs, GaAsP, and GaP light-emitting diodes (LEDs) by studying the degradation in light output and the change in I-V characteristics both during the pulse and in the steady state. Pulse widths ranging from a few hundred nsec to 100 μsec were used. Light output degradation was the most sensitive parameter and was used to determine the thresholds. Just above threshold, damage is caused by an increase in generation-recombination current in the space-charge retion. This current is non-radiative and the light output drops, but the damage is not catastrophic. At higher power, the junction burns through and shunt resistance paths are formed which more drastically degrade the light output. The experimental data match reasonably with the theoretical Wunsch--Bell/Tasca model if a burnout area of 1 / 10 the junction area is assumed. Both the adiabatic term (At -1 ) and the heat flow term (Bt - /sup 1 / 2 /) contribute in all devices, and the equilibrium term (C) contributes in some GaAsP devices. The scatter in the data for GaAs devices is greater than that for GaAsP devices, apparently because the former types have a significant fraction of mavericks with lower-than-normal thresholds. The use of LEDs to examine electrical pulse burnout is advantageous because the light output is quite sensitive to damage and the combined measurement of optical and electrical properties provides additional information about the mechanisms involved

Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

Science.gov (United States)

Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

2016-10-03

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

Science.gov (United States)

Kim, Sungjoon; Cho, Seongjae; Jeong, Jaedeok; Kim, Sungjun; Hwang, Sungmin; Kim, Garam; Yoon, Sukho; Park, Byung-Gook

2017-03-20

The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm2. Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

Topology optimisation of passive coolers for light-emitting diode lamps

DEFF Research Database (Denmark)

Alexandersen, Joe

2015-01-01

This work applies topology optimisation to the design of passive coolers for light-emitting diode (LED) lamps. The heat sinks are cooled by the natural convection currents arising from the temperature difference between the LED lamp and the surrounding air. A large scale parallel computational....... The optimisation results show interesting features that are currently being incorporated into industrial designs for enhanced passive cooling abilities....

High-power laser diodes with high polarization purity

Science.gov (United States)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

Plant experiments with light-emitting diode module in Svet space greenhouse

Science.gov (United States)

Ilieva, Iliyana; Ivanova, Tania; Naydenov, Yordan; Dandolov, Ivan; Stefanov, Detelin

Light is necessary for photosynthesis and shoot orientation in the space plant growth facilities. Light modules (LM) must provide sufficient photosynthetic photon flux for optimal efficiency of photosynthetic processes and also meet the constraints for power, volume and mass. A new LM for SVET Space Greenhouse using Cree R XLamp R 7090 XR light-emitting diodes (LEDs) is developed. Three types of monochromic LEDs emitting in the red, green, and blue region of the spectrum are used. The new LM contains 36 LED spots - 30 LED spots with one red, green and blue LED and 6 LED spots with three red LEDs. DMX programming device controls the LED spots and can set 231 levels of light intensity thus achieving Photosynthetic Photon Flux Density (PPFD) in the range 0-400 µmol.m-2 .s-1 and different percentages of the red, green and blue light, depending on the experimental objectives. Two one-month experiments with "salad-type" plants - lettuce and chicory were carried at 400 µmol.m-2 .s-1 PPFD (high light - HL) and 220 µmol.m-2 .s-1 PPFD (low light - LL) and composition 70% red, 20% green and 10% blue light. In vivo modulated chlorophyll fluorescence was measured by a PAM fluorometer on leaf discs and the following parameters: effective quantum yield of Photosystem II (ΦP SII ) and non-photochemical quenching (NPQ) were calculated. Both lettuce and chicory plants grown at LL express higher photochemical activity of Photosystem II (PSII) than HL grown plants, evaluated by the actual PSII quantum yield, ΦP SII . The calculated steady state NPQ values did not differ significantly in lettuce and chicory. The rapid phase of the NPQ increase was accelerated in all studied LL leaves. In conclusion low light conditions ensured more effective functioning of PSII than HL when lettuce and chicory plants were grown at 70% red, 20% green and 10% blue light composition.

Combination of carbon dot and polymer dot phosphors for white light-emitting diodes.

Science.gov (United States)

Sun, Chun; Zhang, Yu; Sun, Kai; Reckmeier, Claas; Zhang, Tieqiang; Zhang, XiaoYu; Zhao, Jun; Wu, Changfeng; Yu, William W; Rogach, Andrey L

2015-07-28

We realized white light-emitting diodes with high color rendering index (85-96) and widely variable color temperatures (2805-7786 K) by combining three phosphors based on carbon dots and polymer dots, whose solid-state photoluminescence self-quenching was efficiently suppressed within a polyvinyl pyrrolidone matrix. All three phosphors exhibited dominant absorption in the UV spectral region, which ensured the weak reabsorption and no energy transfer crosstalk. The WLEDs showed excellent color stability against the increasing current because of the similar response of the tricolor phosphors to the UV light variation.

Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York City

Energy Technology Data Exchange (ETDEWEB)

Myer, Michael; Goettel, Russell T.; Kinzey, Bruce R.

2012-09-30

A review of five post-top light-emitting diode (LED) pedestrian luminaires installed in New York City's Central Park for possible replacement to the existing metal halide post-top luminaire. This report reviews the energy savings potential and lighting delivered by the LED post-top luminaires.

Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm

NARCIS (Netherlands)

Monat, C.; Alloing, B.; Zinoni, C.; Li, L.; Fiore, A.

2006-01-01

A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temp. electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width ~ 75 micro

A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

KAUST Repository

Prabaswara, Aditya

2017-05-08

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

KAUST Repository

Prabaswara, Aditya; Ng, Tien Khee; Zhao, Chao; Janjua, Bilal; Alyamani, Ahmed; El-desouki, Munir; Ooi, Boon S.

2017-01-01

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

Origin of thermal degradation of Sr 2-xSi 5N 8 : Eu x phosphors in air for light-emitting diodes

NARCIS (Netherlands)

Yeh, C.W.; Chen, W.T.; Liu, R.S.; Hu, S.F.; Sheu, H.S.; Chen, J.M.; Hintzen, H.T.

2012-01-01

The orange-red emitting phosphors based on M 2Si 5N 8:Eu (M = Sr, Ba) are widely utilized in white light-emitting diodes (WLEDs) because of their improvement of the color rendering index (CRI), which is brilliant for warm white light emission. Nitride-based phosphors are adopted in high-performance

Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

Directory of Open Access Journals (Sweden)

Fengbing Wu

2012-01-01

Full Text Available We have investigated the feasibility of employing quantum dot (QD phosphor-based light-emitting diodes (LEDs in aviation applications that request Night Vision Imaging Systems (NVIS compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

Coherence characteristics of light-emitting diodes

International Nuclear Information System (INIS)

Mehta, Dalip Singh; Saxena, Kanchan; Dubey, Satish Kumar; Shakher, Chandra

2010-01-01

We report the measurement of coherence characteristics of light-emitting diodes (LEDs). Experiments were performed using red and green color LEDs directly illuminating the Young's double slit kept in the far-zone. Fourier transform fringe analysis technique was used for the measurement of the visibility of interference fringes from which the modulus of degree of spectral coherence was determined. Low degree of spectral coherence, typically 0.4 for red and 0.2 for green LED with double-slit separation of 400 μm was observed. A variable slit was then kept in front of the LEDs and the double slit was illuminated with the light coming out of the slit. Experiments were performed with various slit sizes and the visibility of the interference fringes was observed. It was found that visibility of the interference fringes changes drastically in presence of variable slit kept in front of LEDs and a high degree of spectral coherence, typically 0.85 for red and 0.8 for green LED with double-slit separation of 400 μm and rectangular slit opening of 500 μm was observed. The experimental results are compared with the theoretical counterparts. Coherence lengths of both the LEDs were also determined and it was obtained 5.8±2 and 24±4 μm for green and red LEDs, respectively.

Mobility balance in the light-emitting layer governs the polaron accumulation and operational stability of organic light-emitting diodes

Science.gov (United States)

Kim, Jae-Min; Lee, Chang-Heon; Kim, Jang-Joo

2017-11-01

Organic light-emitting diode (OLED) displays are lighter and more flexible, have a wider color gamut, and consume less power than conventional displays. Stable materials and the structural design of the device are important for OLED longevity. Control of charge transport and accumulation in the device is particularly important because the interaction of excitons and polarons results in material degradation. This research investigated the charge dynamics of OLEDs experimentally and by drift-diffusion modeling. Parallel capacitance-voltage measurements of devices provided knowledge of charge behavior at different driving voltages. A comparison of exciplex-forming co-host and single host structures established that the mobility balance in the emitting layers determined the amount of accumulated polarons in those layers. Consequently, an exciplex-forming co-host provides a superior structure in terms of device lifetime and efficiency because of its well-balanced mobility. Minimizing polaron accumulation is key to achieving long OLED device lifetimes. This is a crucial aspect of device physics that must be considered in the device design structure.

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

Science.gov (United States)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative

Phosphorescent cyclometalated complexes for efficient blue organic light-emitting diodes

Science.gov (United States)

Suzuri, Yoshiyuki; Oshiyama, Tomohiro; Ito, Hiroto; Hiyama, Kunihisa; Kita, Hiroshi

2014-10-01

Phosphorescent emitters are extremely important for efficient organic light-emitting diodes (OLEDs), which attract significant attention. Phosphorescent emitters, which have a high phosphorescence quantum yield at room temperature, typically contain a heavy metal such as iridium and have been reported to emit blue, green and red light. In particular, the blue cyclometalated complexes with high efficiency and high stability are being developed. In this review, we focus on blue cyclometalated complexes. Recent progress of computational analysis necessary to design a cyclometalated complex is introduced. The prediction of the radiative transition is indispensable to get an emissive cyclometalated complex. We summarize four methods to control phosphorescence peak of the cyclometalated complex: (i) substituent effect on ligands, (ii) effects of ancillary ligands on heteroleptic complexes, (iii) design of the ligand skeleton, and (iv) selection of the central metal. It is considered that novel ligand skeletons would be important to achieve both a high efficiency and long lifetime in the blue OLEDs. Moreover, the combination of an emitter and a host is important as well as the emitter itself. According to the dependences on the combination of an emitter and a host, the control of exciton density of the triplet is necessary to achieve both a high efficiency and a long lifetime, because the annihilations of the triplet state cause exciton quenching and material deterioration.

Interference phenomenon determines the color in an organic light emitting diode

Science.gov (United States)

Granlund, Thomas; Pettersson, Leif A. A.; Anderson, Mats R.; Inganäs, Olle

1997-06-01

We report on electroluminescence from two-layer organic diodes made of poly(3-methyl-4-octylthiophene) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,2,4-oxadiazole films between electrodes of indium tin oxide and Ca/Al. The diodes emitted light in the green-blue range; the electroluminescence spectra varied between diodes with different thicknesses of the polymer and molecular layers. The optical phenomena were simulated with a model accounting for interference effects; simulated results showed that the electroluminescence from the organic diode can be due neither to luminescence of the polymer nor of the molecular layer. These model simulations, together with electrochemical measurements, can be interpreted as evidence for an indirect optical transition at the polymer/molecule interface that only occurs in a strong electric field. We label this transition an electroplex.

Powerful infrared emitting diodes

Directory of Open Access Journals (Sweden)

Kogan L. M.

2012-02-01

Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

Recycling of Gallium from End-of-Life Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Nagy S.

2017-06-01

Full Text Available Nowadays Light Emitting Diodes (LEDs are widely utilized. They are applied as backlighting in Liquid Crystal Displays (LCD and TV sets or as lighting equipments in homes, cars, instruments and street-lightning. End of life equipments are containing more and more LEDs. The recovery of valuable materials – such as Ga, Au, Cu etc. – from the LEDs is essential for the creating the circular economy. First task is the development of a proper recycling technology. Most of the researchers propose fully chemical or thermal-chemical pathway for the recycling of LEDs.

Novel Strategy for Photopatterning Emissive Polymer Brushes for Organic Light Emitting Diode Applications.

Science.gov (United States)

Page, Zachariah A; Narupai, Benjaporn; Pester, Christian W; Bou Zerdan, Raghida; Sokolov, Anatoliy; Laitar, David S; Mukhopadhyay, Sukrit; Sprague, Scott; McGrath, Alaina J; Kramer, John W; Trefonas, Peter; Hawker, Craig J

2017-06-28

A light-mediated methodology to grow patterned, emissive polymer brushes with micron feature resolution is reported and applied to organic light emitting diode (OLED) displays. Light is used for both initiator functionalization of indium tin oxide and subsequent atom transfer radical polymerization of methacrylate-based fluorescent and phosphorescent iridium monomers. The iridium centers play key roles in photocatalyzing and mediating polymer growth while also emitting light in the final OLED structure. The scope of the presented procedure enables the synthesis of a library of polymers with emissive colors spanning the visible spectrum where the dopant incorporation, position of brush growth, and brush thickness are readily controlled. The chain-ends of the polymer brushes remain intact, affording subsequent chain extension and formation of well-defined diblock architectures. This high level of structure and function control allows for the facile preparation of random ternary copolymers and red-green-blue arrays to yield white emission.

InP/ZnS nanocrystals for colour conversion in white light emitting diodes

DEFF Research Database (Denmark)

Shirazi, Roza

In this work a comprehensive study of a colloidal InP/ZnS nanocrystals (NC) as the colour conversion material for white light emitting diodes (WLED) is shown. Studied nanocrystals were synthesised by wet chemistry using one pot, hot injection method. A quantum efficiency (QE) of photoluminescence......, radiative and non-radiative recombination rates were determined and QE of 63% for the population of NCs that emit light was derived. A search for source of exciton losses in bright nanocrystals temperature resolved TRPL was studied and it revealed carrier trapping most likely at core-shell interface as well...... as at the surface and which competes with bright and dark exciton states. A presence of long-lived dark excitons and trapped charges lead to strong Auger recombination at high (relative to the trapping times) excitation. A colour conversion efficiency of the nanocrystals upon light absorption and in a process...

Effects of current crowding on light extraction efficiency of conventional GaN-based light-emitting diodes.

Science.gov (United States)

Cao, Bin; Li, Shuiming; Hu, Run; Zhou, Shengjun; Sun, Yi; Gan, Zhiying; Liu, Sheng

2013-10-21

Current crowding effects (CCEs) on light extraction efficiency (LEE) of conventional GaN-based light-emitting diodes (LEDs) are analyzed through Monte Carlo ray-tracing simulation. The non-uniform radiative power distribution of the active layer of the Monte Carlo model is obtained based on the current spreading theory and rate equation. The simulation results illustrate that CCE around n-pad (n-CCE) has little effect on LEE, while CCE around p-pad (p-CCE) results in a notable LEE droop due to the significant absorption of photons emitted under p-pad. LEE droop is alleviated by a SiO₂ current blocking layer (CBL) and reflective p-pad. Compared to the conventional LEDs without CBL, the simulated LEE of LEDs with CBL at 20 A/cm² and 70 A/cm² is enhanced by 7.7% and 19.0%, respectively. It is further enhanced by 7.6% and 11.4% after employing a reflective p-pad due to decreased absorption. These enhancements are in accordance with the experimental results. Output power of LEDs with CBL is enhanced by 8.7% and 18.2% at 20 A/cm² and 70 A/cm², respectively. And the reflective p-pad results in a further enhancement of 8.9% and 12.7%.

Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

International Nuclear Information System (INIS)

Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

2017-01-01

Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

Study of electrical fatigue by defect engineering in organic light-emitting diodes

International Nuclear Information System (INIS)

Gassmann, Andrea; Yampolskii, Sergey V.; Klein, Andreas; Albe, Karsten; Vilbrandt, Nicole; Pekkola, Oili; Genenko, Yuri A.; Rehahn, Matthias; Seggern, Heinz von

2015-01-01

Graphical abstract: - Highlights: • Electrical fatigue is investigated in PPV-based polymer light-emitting diodes. • Bromide defects remaining from Gilch synthesis limit PLED lifetime. • Electrical stress yields lower hole mobility and transition to dispersive transport. • Triplet excitons reduce lifetime and EL-emission-induced degradation observed. • Self-consistent drift-diffusion model for charge carrier injection and transport. - Abstract: In this work the current knowledge on the electrical degradation of polymer-based light-emitting diodes is reviewed focusing especially on derivatives of poly(p-phenylene-vinylene) (PPV). The electrical degradation will be referred to as electrical fatigue and is understood as mechanisms, phenomena and material properties that change during continuous operation of the device at constant current. The focus of this review lies especially on the effect of chemical synthesis on the transport properties of the organic semiconductor and the device lifetimes. In addition, the prominent transparent conductive oxide indium tin oxide as well as In 2 O 3 will be reviewed and how their properties can be altered by the processing conditions. The experiments are accompanied by theoretical modeling shining light on how the change of injection barriers, charge carrier mobility or trap density influence the current–voltage characteristics of the diodes and on how and which defects form in transparent conductive oxides used as anode

The Use of Light-Emitting Diodes (LEDs) as Green and Red/Far-Red Light Sources in Plant Physiology.

Science.gov (United States)

Jackson, David L.; And Others

1985-01-01

The use of green, red, and far-red light-emitting diodes (LEDs) as light sources for plant physiological studies is outlined and evaluated. Indicates that LED lamps have the advantage over conventional light sources in that they are lightweight, low-cost, portable, easily constructed, and do not require color filters. (Author/DH)

Cyclometalated Iridium(III) Carbene Phosphors for Highly Efficient Blue Organic Light-Emitting Diodes.

Science.gov (United States)

Chen, Zhao; Wang, Liqi; Su, Sikai; Zheng, Xingyu; Zhu, Nianyong; Ho, Cheuk-Lam; Chen, Shuming; Wong, Wai-Yeung

2017-11-22

Five deep blue carbene-based iridium(III) phosphors were synthesized and characterized. Interestingly, one of them can be fabricated into deep blue, sky blue and white organic light-emitting diodes (OLEDs) through changing the host materials and exciton blocking layers. These deep and sky blue devices exhibit Commission Internationale de l'Éclairage (CIE) coordinates of (0.145, 0.186) and (0.152, 0.277) with external quantum efficiency (EQE) of 15.2% and 9.6%, respectively. The EQE of the deep blue device can be further improved up to 19.0% by choosing a host with suitable energy level of its lowest unoccupied molecular orbital (LUMO).

Emerging Transparent Conducting Electrodes for Organic Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Tze-Bin Song

2014-03-01

Full Text Available Organic light emitting diodes (OLEDs have attracted much attention in recent years as next generation lighting and displays, due to their many advantages, including superb performance, mechanical flexibility, ease of fabrication, chemical versatility, etc. In order to fully realize the highly flexible features, reduce the cost and further improve the performance of OLED devices, replacing the conventional indium tin oxide with better alternative transparent conducting electrodes (TCEs is a crucial step. In this review, we focus on the emerging alternative TCE materials for OLED applications, including carbon nanotubes (CNTs, metallic nanowires, conductive polymers and graphene. These materials are selected, because they have been applied as transparent electrodes for OLED devices and achieved reasonably good performance or even higher device performance than that of indium tin oxide (ITO glass. Various electrode modification techniques and their effects on the device performance are presented. The effects of new TCEs on light extraction, device performance and reliability are discussed. Highly flexible, stretchable and efficient OLED devices are achieved based on these alternative TCEs. These results are summarized for each material. The advantages and current challenges of these TCE materials are also identified.

High-efficiency pyrene-based blue light emitting diodes: Aggregation suppression using a calixarene 3D-scaffold

KAUST Repository

Chan, Khaileok

2012-01-01

An efficient blue light emitting diode based on solution processable pyrene-1,3-alt-calix[4]arene is demonstrated, providing a record current efficiency of 10.5 cd A -1 in a simple non-doped OLED configuration. Complete suppression of pyrene aggregation in the solid state is achieved by controlling chromophore dispersion using the 1,3-alt-calix[4]arene scaffold. © 2012 The Royal Society of Chemistry.

Implantable wireless powered light emitting diode (LED) for near-infrared photoimmunotherapy: device development and experimental assessment in vitro and in vivo.

Science.gov (United States)

Nakajima, Kohei; Kimura, Toshihiro; Takakura, Hideo; Yoshikawa, Yasuo; Kameda, Atsushi; Shindo, Takayuki; Sato, Kazuhide; Kobayashi, Hisataka; Ogawa, Mikako

2018-04-13

The aim of this study was to develop and assess a novel implantable, wireless-powered, light-emitting diode (LED) for near-infrared photoimmunotherapy (NIR-PIT). NIR-PIT is a recently developed cancer therapy that uses NIR light and antibody-photosensitizer conjugates and is able to induce cancer-specific cell death. Due to limited light penetration depth it is currently unable to treat tumors in deep tissues. Use of implanted LED might potentially overcome this limitation. The wireless LED system was able to emit NIR light up to a distance of 20 cm from the transmitter coil by using low magnetic fields as compliant with limits for use in humans. Results indicated that the LED system was able to kill tumor cells in vitro and to suppress tumor growth in implanted tumor-bearing mice. Results indicated that the proposed implantable wireless LED system was able to suppress tumor growth in vivo . These results are encouraging as wireless LED systems such as the one here developed might be a possible solution to treat tumors in deep regions in humans. Further research in this area would be important. An implantable LED system was developed. It consisted of a LED capsule including two LED sources and a receiver coil coupled with an external coil and power source. Wireless power transmission was guaranteed by using electromagnetic induction. The system was tested in vitro by using EGFR-expressing cells and HER2-expressing cells. The system was also tested in vivo in tumor-bearing mice.

Analytic formalism for current crowding in light emitting diodes

International Nuclear Information System (INIS)

Lee, Kyu-Seok

2012-01-01

This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of 670-nm Light-Emitting Diode Light On Neuronal Cultures

Science.gov (United States)

Wong-Riley, Margaret T. T.; Whelan, Harry T.

2002-01-01

Light close to and within the near infrared range has documented benefits for promoting wound healing in human and animal studies. Our preliminary results using light-emitting diodes (LEDs) in this range have also demonstrated two-to five-fold increases in growth-phase-specific DNA synthesis in normal fibroblasts, muscle cells, osteoblasts, and mucosal epithelial cells in tissue cultures. However, the mechanisms of action of such light on cells are poorly understood. We hypothesized that the therapeutic effects of such light result from the stimulation of cellular events associated with increases in cytochrome oxidase activity. As a first step in testing our hypothesis, we subjected primary neuronal cultures to impulse blockade by tetrodotoxin (TTX), a voltage-dependent sodium channel blocker, and applied LED light at 670 nm to determine if it could partially or fully reverse the reduction of cytochrome oxidase activity by TTX. The wavelength and parameters were previously tested to be beneficial for wound healing.

Simple single-emitting layer hybrid white organic light emitting with high color stability

Science.gov (United States)

Nguyen, C.; Lu, Z. H.

2017-10-01

Simultaneously achieving a high efficiency and color quality at luminance levels required for solid-state lighting has been difficult for white organic light emitting diodes (OLEDs). Single-emitting layer (SEL) white OLEDs, in particular, exhibit a significant tradeoff between efficiency and color stability. Furthermore, despite the simplicity of SEL white OLEDs being its main advantage, the reported device structures are often complicated by the use of multiple blocking layers. In this paper, we report a highly simplified three-layered white OLED that achieves a low turn-on voltage of 2.7 V, an external quantum efficiency of 18.9% and power efficiency of 30 lm/W at 1000 cd/cm2. This simple white OLED also shows good color quality with a color rendering index of 75, CIE coordinates (0.42, 0.46), and little color shifting at high luminance. The device consists of a SEL sandwiched between a hole transport layer and an electron transport layer. The SEL comprises a thermally activated delayer fluorescent molecule having dual functions as a blue emitter and as a host for other lower energy emitters. The improved color stability and efficiency in such a simple device structure is explained as due to the elimination of significant energy barriers at various organic-organic interfaces in the traditional devices having multiple blocking layers.

Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes

Science.gov (United States)

Masui, Hisashi; Fellows, Natalie N.; Sato, Hitoshi; Asamizu, Hirokuni; Nakamura, Shuji; Denbaars, Steven P.

2007-08-01

A metal layer formed on the backside of InGaN/sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and without a reflector. A sphere package that employs no reflector is proposed and fabricated. Light extraction of the sphere design is discussed; a light source in the sphere package would not have to be either an ideal point or placed at the center of the sphere, due to a finite critical angle at the sphere/air interface.

Dr. Harry Whelan With the Light Emitting Diode Probe

Science.gov (United States)

1999-01-01

The red light from the Light Emitting Diode (LED) probe shines through the fingers of Dr. Harry Whelan, a pediatric neurologist at the Children's Hospital of Wisconsin in Milwaukee. Dr. Whelan uses the long waves of light from the LED surgical probe to activate special drugs that kill brain tumors. Laser light previously has been used for this type of surgery, but the LED light illuminates through all nearby tissues, reaching parts of tumors that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. Also, it can be used for hours at a time while still remaining cool to the touch. The probe was developed for photodynamic cancer therapy under a NASA Small Business Innovative Research Program grant. The program is part of NASA's Technology Transfer Department at the Marshall Space Flight Center.

III-nitride based light emitting diodes and applications

CERN Document Server

Han, Jung; Amano, Hiroshi; Morkoç, Hadis

2017-01-01

The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performanc...

A Simple, Small-Scale Lego Colorimeter with a Light-Emitting Diode (LED) Used as Detector

Science.gov (United States)

Asheim, Jonas; Kvittingen, Eivind V.; Kvittingen, Lise; Verley, Richard

2014-01-01

This article describes how to construct a simple, inexpensive, and robust colorimeter from a few Lego bricks, in which one light-emitting diode (LED) is used as a light source and a second LED as a light detector. The colorimeter is suited to various grades and curricula.

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

International Nuclear Information System (INIS)

Lu, Yu-Hsuan; Pilkuhn, Manfred H.; Fu, Yi-Keng; Chu, Mu-Tao; Huang, Shyh-Jer; Su, Yan-Kuin; Wang, Kang L.

2014-01-01

The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lu, Yu-Hsuan; Pilkuhn, Manfred H. [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Fu, Yi-Keng; Chu, Mu-Tao [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Huang, Shyh-Jer, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electronic Engineering, Kun-Shan University, Tainan 71003, Taiwan (China); Wang, Kang L. [Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2014-03-21

The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

2014-06-09

The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

Light emitting diode excitation emission matrix fluorescence spectroscopy.

Science.gov (United States)

Hart, Sean J; JiJi, Renée D

2002-12-01

An excitation emission matrix (EEM) fluorescence instrument has been developed using a linear array of light emitting diodes (LED). The wavelengths covered extend from the upper UV through the visible spectrum: 370-640 nm. Using an LED array to excite fluorescence emission at multiple excitation wavelengths is a low-cost alternative to an expensive high power lamp and imaging spectrograph. The LED-EEM system is a departure from other EEM spectroscopy systems in that LEDs often have broad excitation ranges which may overlap with neighboring channels. The LED array can be considered a hybrid between a spectroscopic and sensor system, as the broad LED excitation range produces a partially selective optical measurement. The instrument has been tested and characterized using fluorescent dyes: limits of detection (LOD) for 9,10-bis(phenylethynyl)-anthracene and rhodamine B were in the mid parts-per-trillion range; detection limits for the other compounds were in the low parts-per-billion range (LED-EEMs were analyzed using parallel factor analysis (PARAFAC), which allowed the mathematical resolution of the individual contributions of the mono- and dianion fluorescein tautomers a priori. Correct identification and quantitation of six fluorescent dyes in two to six component mixtures (concentrations between 12.5 and 500 ppb) has been achieved with root mean squared errors of prediction (RMSEP) of less than 4.0 ppb for all components.

Manipulating the Local Light Emission in Organic Light-Emitting Diodes by using Patterned Self-Assembled Monolayers

NARCIS (Netherlands)

Mathijssen, S.G.J.; Hal, P.A. van; Biggelaar, T.J.M. van den; Smits, E.C.P.; Boer, B. de; Kemerink, M.; Janssen, R.A.J.; Leeuw, D.M. de

2008-01-01

In organic light-emitting diodes (OLEDs), interface dipoles play an important role in the process of charge injection from the metallic electrode into the active organic layer.[1,2] An oriented dipole layer changes the effective work function of the electrode because of its internal electric field.

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

KAUST Repository

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M.; Speck, James S.; Nakamura, Shuji; Ooi, Boon S.; DenBaars, Steven P.

2017-01-01

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021

Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

Science.gov (United States)

Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

2016-06-22

An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes.

Science.gov (United States)

Kim, Byung-Jae; Mastro, Michael A; Hite, Jennifer; Eddy, Charles R; Kim, Jihyun

2010-10-25

We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.

Solid State pH Sensor Based on Light Emitting Diodes (LED As Detector Platform

Directory of Open Access Journals (Sweden)

Dermot Diamond

2006-08-01

Full Text Available A low-power, high sensitivity, very low-cost light emitting diode (LED-baseddevice developed for low-cost sensor networks was modified with bromocresol greenmembrane to work as a solid-state pH sensor. In this approach, a reverse-biased LEDfunctioning as a photodiode is coupled with a second LED configured in conventionalemission mode. A simple timer circuit measures how long (in microsecond it takes for thephotocurrent generated on the detector LED to discharge its capacitance from logic 1 ( 5 Vto logic 0 ( 1.7 V. The entire instrument provides an inherently digital output of lightintensity measurements for a few cents. A light dependent resistor (LDR modified withsimilar sensor membrane was also used as a comparison method. Both the LED sensor andthe LDR sensor responded to various pH buffer solutions in a similar way to obtainsigmoidal curves expected of the dye. The pKa value obtained for the sensors was found toagree with the literature value.

Efficient perovskite light-emitting diodes featuring nanometre-sized crystallites

Science.gov (United States)

Xiao, Zhengguo; Kerner, Ross A.; Zhao, Lianfeng; Tran, Nhu L.; Lee, Kyung Min; Koh, Tae-Wook; Scholes, Gregory D.; Rand, Barry P.

2017-01-01

Organic-inorganic hybrid perovskite materials are emerging as highly attractive semiconductors for use in optoelectronics. In addition to their use in photovoltaics, perovskites are promising for realizing light-emitting diodes (LEDs) due to their high colour purity, low non-radiative recombination rates and tunable bandgap. Here, we report highly efficient perovskite LEDs enabled through the formation of self-assembled, nanometre-sized crystallites. Large-group ammonium halides added to the perovskite precursor solution act as a surfactant that dramatically constrains the growth of 3D perovskite grains during film forming, producing crystallites with dimensions as small as 10 nm and film roughness of less than 1 nm. Coating these nanometre-sized perovskite grains with longer-chain organic cations yields highly efficient emitters, resulting in LEDs that operate with external quantum efficiencies of 10.4% for the methylammonium lead iodide system and 9.3% for the methylammonium lead bromide system, with significantly improved shelf and operational stability.

Application of Surface Plasmonics for Semiconductor Light-Emitting Diodes

DEFF Research Database (Denmark)

Fadil, Ahmed

This thesis addresses the lack of an efficient semiconductor light source at green emission colours. Considering InGaN based quantum-well (QW) light-emitters and light-emitting diodes (LEDs), various ways of applying surface plasmonics and nano-patterning to improve the efficiency, are investigated....... By placing metallic thin films or nanoparticles (NPs) in the near-field of QW light-emitters, it is possible to improve their internal quantum efficiency (IQE) through the Purcell enhancement effect. It has been a general understanding that in order to achieve surface plasmon (SP) coupling with QWs......-QW coupling does not necessarily lead to emission enhancement. The findings of this work show that the scattering and absorption properties of NPs play a crucial role in determining whether the implementation will improve or degrade the optical performance. By applying these principles, a novel design...

High power AlGaN ultraviolet light emitters

Science.gov (United States)

Shatalov, Max; Sun, Wenhong; Jain, Rakesh; Lunev, Alex; Hu, Xuhong; Dobrinsky, Alex; Bilenko, Yuri; Yang, Jinwei; Garrett, Gregory A.; Rodak, Lee E.; Wraback, Michael; Shur, Michael; Gaska, Remis

2014-06-01

We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output power of DUV LEDs. Performance of the LED is related to optimization of the device structure design and improvements of the epitaxial material quality.

Quantification of lycopene in the processed tomato-based products by means of the light-emitting diode (LED) and compact photoacoustic (PA) detector

Science.gov (United States)

Bicanic, D.; Skenderović, H.; Marković, K.; Dóka, O.; Pichler, L.; Pichler, G.; Luterotti, S.

2010-03-01

The combined use of a high power light emitting diode (LED) and the compact photoacoustic (PA) detector offers the possibility for a rapid (no extraction needed), accurate (precision 1.5%) and inexpensive quantification of lycopene in different products derived from the thermally processed tomatoes. The concentration of lycopene in selected products ranges from a few mg to several tens mg per 100 g fresh weight. The HPLC was used as the well established reference method.

Quantification of lycopene in the processed tomato-based products by means of the light-emitting diode (LED) and compact photoacoustic (PA) detector

International Nuclear Information System (INIS)

Bicanic, D; Skenderovic, H; Pichler, L; Pichler, G; Markovic, K; Doka, O; Luterotti, S

2010-01-01

The combined use of a high power light emitting diode (LED) and the compact photoacoustic (PA) detector offers the possibility for a rapid (no extraction needed), accurate (precision 1.5%) and inexpensive quantification of lycopene in different products derived from the thermally processed tomatoes. The concentration of lycopene in selected products ranges from a few mg to several tens mg per 100 g fresh weight. The HPLC was used as the well established reference method.

High Output LED-Based Profile Lighting Fixture

DEFF Research Database (Denmark)

Török, Lajos; Beczkowski, Szymon; Munk-Nielsen, Stig

2011-01-01

Recent developments in power light emitting diode (LED) industry have made LEDs suitable for being efficiently used in high intensity lighting fixtures instead of the commonly used high intensity discharge (HID) lamps. A high output LEDbased profile-light fixture is presented in this paper...

Tunable light extraction efficiency of GaN light emitting diodes by ZnO nanorod arrays

International Nuclear Information System (INIS)

Chao, C H; Lin, W H; Lin, C F; Chen, C H; Changjean, C H

2009-01-01

We report the influence of ZnO nanorod arrays (NRAs) on the light extraction efficiency of GaN light emitting diodes (LEDs). Our investigation indicates that the output light intensity of the device exhibits a periodic oscillation as a function of the rod length. The variation of light extraction efficiency is caused by the Fabry–Perot resonance of the film composed of the nanorods. The theoretical analysis shows a good agreement with the measurement results. Our study reveals a method to control the output light extraction efficiency of GaN LEDs via a simple solution-based synthesized ZnO NRAs

Extracting the emitter orientation in organic light-emitting diodes from external quantum efficiency measurements

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Tobias D., E-mail: Tobias.Schmidt@physik.uni-augsburg.de; Reichardt, Lukas J.; Wehrmeister, Sebastian; Scholz, Bert J.; Mayr, Christian; Brütting, Wolfgang, E-mail: Wolfgang.Bruetting@physik.uni-augsburg.de [Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Rausch, Andreas F.; Wehlus, Thomas; Reusch, Thilo C. G. [OSRAM OLED GmbH, Wernerwerkstrasse 2, 93049 Regensburg (Germany); Ciarnáin, Rossá Mac; Danz, Norbert [Fraunhofer Institute for Applied Optics and Precision Engineering, 07745 Jena (Germany)

2014-07-28

Emitter orientation will play a major role in future applications of organic light-emitting diodes due to its strong impact on the efficiency of the devices. Up to now, determining the orientation of transition dipole moments required elaborate angular-dependent measurements of the light emission pattern. In this paper, we present a simplified and straightforward method to extract the emitter orientation from external quantum efficiency measurements. We demonstrate the validity of the method on three different dye-doped emitting systems.

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

Science.gov (United States)

Ahn, Doyeol; Park, Seoung-Hwan

2016-01-01

In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology. PMID:26880097

Flexible bottom-emitting white organic light-emitting diodes with semitransparent Ni/Ag/Ni anode.

Science.gov (United States)

Koo, Ja-Ryong; Lee, Seok Jae; Lee, Ho Won; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Woo Young; Kim, Young Kwan

2013-05-06

We fabricated a flexible bottom-emitting white organic light-emitting diode (BEWOLED) with a structure of PET/Ni/Ag/Ni (3/6/3 nm)/ NPB (50 nm)/mCP (10 nm)/7% FIrpic:mCP (10 nm)/3% Ir(pq)(2) acac:TPBi (5 nm)/7% FIrpic:TPBi (5 nm)/TPBi (10 nm)/Liq (2 nm)/ Al (100 nm). To improve the performance of the BEWOLED, a multilayered metal stack anode of Ni/Ag/Ni treated with oxygen plasma for 60 sec was introduced into the OLED devices. The Ni/Ag/Ni anode effectively enhanced the probability of hole-electron recombination due to an efficient hole injection into and charge balance in an emitting layer. By comparing with a reference WOLED using ITO on glass, it is verified that the flexible BEWOLED showed a similar or better electroluminescence (EL) performance.

A white organic light emitting diode based on anthracene-triphenylamine derivatives

Science.gov (United States)

Jiang, Quan; Qu, Jianjun; Yu, Junsheng; Tao, Silu; Gan, Yuanyuan; Jiang, Yadong

2010-10-01

White organic lighting-diode (WOLED) can be used as flat light sources, backlights for liquid crystal displays and full color displays. Recently, a research mainstream of white OLED is to develop the novel materials and optimize the structure of devices. In this work a WOLED with a structure of ITO/NPB/PAA/Alq3: x% rubrene/Alq3/Mg: Ag, was fabricated. The device has two light-emitting layers. NPB is used as a hole transport layer, PAA as a blue emitting layer, Alq3: rubrene host-guest system as a yellow emitting layer, and Alq3 close to the cathode as an electron transport layer. In the experiment, the doping concentration of rubrene was optimized. WOLED 1 with 4% rubrene achieved a maximum luminous efficiency of 1.80 lm/W, a maximum luminance of 3926 cd/m2 and CIE coordinates of (0.374, 0.341) .WOLED 2 with 2% rubrene achieved a maximum luminous efficiency of 0.65 lm/W, a maximum luminance of 7495cd/m2 and CIE coordinates of (0.365,0.365).

Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.

Science.gov (United States)

Jung, Hyunchul; Chung, Wonkeun; Lee, Chang Hun; Kim, Sung Hyun

2012-07-01

White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.

Multispectral imaging of the ocular fundus using light emitting diode illumination.

Science.gov (United States)

Everdell, N L; Styles, I B; Calcagni, A; Gibson, J; Hebden, J; Claridge, E

2010-09-01

We present an imaging system based on light emitting diode (LED) illumination that produces multispectral optical images of the human ocular fundus. It uses a conventional fundus camera equipped with a high power LED light source and a highly sensitive electron-multiplying charge coupled device camera. It is able to take pictures at a series of wavelengths in rapid succession at short exposure times, thereby eliminating the image shift introduced by natural eye movements (saccades). In contrast with snapshot systems the images retain full spatial resolution. The system is not suitable for applications where the full spectral resolution is required as it uses discrete wavebands for illumination. This is not a problem in retinal imaging where the use of selected wavelengths is common. The modular nature of the light source allows new wavelengths to be introduced easily and at low cost. The use of wavelength-specific LEDs as a source is preferable to white light illumination and subsequent filtering of the remitted light as it minimizes the total light exposure of the subject. The system is controlled via a graphical user interface that enables flexible control of intensity, duration, and sequencing of sources in synchrony with the camera. Our initial experiments indicate that the system can acquire multispectral image sequences of the human retina at exposure times of 0.05 s in the range of 500-620 nm with mean signal to noise ratio of 17 dB (min 11, std 4.5), making it suitable for quantitative analysis with application to the diagnosis and screening of eye diseases such as diabetic retinopathy and age-related macular degeneration.

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

CERN Document Server

Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

International Nuclear Information System (INIS)

Morgado, Jorge; Barbagallo, Nunzio; Charas, Ana; Matos, Manuel; Alcacer, Luis; Cacialli, Franco

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide

Bi-layer non-doped small-molecular white organic light-emitting diodes with high colour stability

International Nuclear Information System (INIS)

Chen Shuming; Kwok, Hoi-Sing; Zhao Zujin; Tang Benzhong; Wang Zhiming; Lu Ping; Gao Zhao; Ma Yuguang

2011-01-01

Bi-layer non-doped white organic light-emitting diodes (WOLEDs) with hole-transporting layer 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl)phenyl) thiophen-2yl)benzo[c][1,2,5]thiadiazole (BTPETTD) as a red emitter and electron-transporting layer 4,4'-bis(1-phenyl-1H-phenanthro[9,10-d]imidazol-2-yl)biphenyl (DDPi) as a blue emitter are demonstrated. The blue emission is due to direct recombination of excitons in DPPi, while the red emission originates not only from the direct recombination of excitons in BTPETTD but also from a colour down-conversion process by absorbing blue emission and re-emitting red photons. The combination of blue emission and red emission yields an efficient and extremely stable white colour, regardless of driving voltages. In our demonstration, a bi-layer WOLED with an efficiency of 4.2 cd A -1 at 1000 cd m -2 , 1931 Commision International de L'Eclairage coordinates of (0.31, 0.31) and a high colour rendering index of 92 over a wide range of driving voltages is obtained.

White Polymer Light-Emitting Diodes Based on Exciplex Electroluminescence from Polymer Blends and a Single Polymer.

Science.gov (United States)

Liang, Junfei; Zhao, Sen; Jiang, Xiao-Fang; Guo, Ting; Yip, Hin-Lap; Ying, Lei; Huang, Fei; Yang, Wei; Cao, Yong

2016-03-09

In this Article, we designed and synthesized a series of polyfluorene derivatives, which consist of the electron-rich 4,4'-(9-alkyl-carbazole-3,6-diyl)bis(N,N-diphenylaniline) (TPA-Cz) in the side chain and the electron-deficient dibenzothiophene-5,5-dioxide (SO) unit in the main chain. The resulting copolymer PF-T25 that did not comprise the SO unit exhibited blue light-emission with the Commission Internationale de L'Eclairage coordinates of (0.16, 0.10). However, by physically blending PF-T25 with a blue light-emitting SO-based oligomer, a novel low-energy emission correlated to exciplex emerged due to the appropriate energy level alignment of TPA-Cz and the SO-based oligomers, which showed extended exciton lifetime as confirmed by time-resolved photoluminescent spectroscopy. The low-energy emission was also identified in copolymers consisting of SO unit in the main chain, which can effectively compensate for the high-energy emission to produce binary white light-emission. Polymer light-emitting diodes based on the exciplex-type single greenish-white polymer exhibit the peak luminous efficiency of 2.34 cd A(-1) and the maximum brightness of 12 410 cd m(-2), with Commission Internationale de L'Eclairage color coordinates (0.27, 0.39). The device based on such polymer showed much better electroluminescent stability than those based on blending films. These observations indicated that developing a single polymer with the generated exciplex emission can be a novel and effective molecular design strategy toward highly stable and efficient white polymer light-emitting diodes.

Purifying Synthetic High-Strength Wastewater by Microalgae Chlorella Vulgaris Under Various Light Emitting Diode Wavelengths and Intensities

Directory of Open Access Journals (Sweden)

Zhigang Ge

2013-06-01

Full Text Available The high-strength wastewater is now well known as a threat to the natural water since it is highly possible to arouse water eutrophication or algal blooms. The effects of various light emitting diode wavelengths and intensities on the microalgae biological wastewater treatment system was studied in this research. The various nutrient removals and economic efficiencies represented similar variation trends, and these variations under both high C and N loading treatments were similar too. The order for microalgae C. vulgaris reproduction in terms of dry weight and nutrient removal efficiency both were red > white > yellow > blue, under high carbon and nitrogen loading treatments, indicating that the red light was the optimum light wavelength. Furthermore, considering the optimal light intensity in terms of nutrient removal efficiency was 2500 and 2000 μmol/m2•s, while in terms of economic efficiency was 1000, 1500 and 2000 μmol/m2•s. Therefore, the optimum light intensity was found to be 2000 μmol/m2•s. In addition, the optimal experimental illumination time was determined as 120 h. The Chlorella vulgaris microalgae biological wastewater treatment system utilized in this research was able to purify the high-strength carbon and nitrogen wastewater effectively under optimum light wavelength and intensity.

Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

Energy Technology Data Exchange (ETDEWEB)

Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

2014-09-15

In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m{sup 2}, driving voltage was 4.4 V, and current density was 2.4 mA/cm{sup 2}. A white OLED component was then manufactured by doping red dopant [Os(bpftz){sub 2}(PPh{sub 2}Me){sub 2}] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE{sub x,y} of (0.31,0.35) at a luminance of 1000 cd/m{sup 2}, with a maximum luminance of 15,600 cd/m{sup 2} at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons.

Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

International Nuclear Information System (INIS)

Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

2014-01-01

In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m 2 , driving voltage was 4.4 V, and current density was 2.4 mA/cm 2 . A white OLED component was then manufactured by doping red dopant [Os(bpftz) 2 (PPh 2 Me) 2 ] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE x,y of (0.31,0.35) at a luminance of 1000 cd/m 2 , with a maximum luminance of 15,600 cd/m 2 at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

Science.gov (United States)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5�

Light-Emitting Diode-Based Illumination System for In Vitro Photodynamic Therapy

OpenAIRE

Defu Chen; Huifen Zheng; Zhiyong Huang; Huiyun Lin; Zhidong Ke; Shusen Xie; Buhong Li

2012-01-01

The aim of this study is to develop a light-emitting diode- (LED-) based illumination system that can be used as an alternative light source for in vitro photodynamic therapy (PDT). This illumination system includes a red LED array composed of 70 LEDs centered at 643 nm, an air-cooling unit, and a specific-designed case. The irradiance as a function of the irradiation distance between the LED array and the sample, the homogeneity and stability of irradiation, and the effect of long-time irrad...

A highly luminescent dinuclear Eu(III) complex based on 4,4'-bis (4'',4'',4''-trifluoro-1'',3''-dioxobutyl)-o-terphenyl for light-emitting diodes

International Nuclear Information System (INIS)

Liu Shenggui; He Pei; Wang Huihui; Shi Jianxin; Gong Menglian

2009-01-01

A dinuclear Eu(III) complex Eu 2 (btbt) 3 .4H 2 O.CH 3 CH 2 OH.N(CH 2 CH 3 ) 3 was synthesized, where H 2 (btbt) was 4,4'-bis (4'',4'',4'',-trifluoro-1'',3''-dioxobutyl)-o-terphenyl. The composition and structure of the complex were characterized by elemental analysis, IR, UV-vis and FAB-MS spectroscopy. The complex emits the characteristic red luminescence of Eu 3+ ion due to the 5 D 0 → 7 F J (J = 0-4) transitions under ∼395 nm-light excitation with good luminescent quantum efficiency (32%) and exhibits high thermal stability (337 deg. C). Bright red light-emitting diodes (LEDs) were fabricated by coating the complex onto a ∼395 nm-emitting InGaN chip. When the mass ratio of the red phosphor to the silicone is 1:30, the efficiency of the fabricated LEDs with the europium complex is 0.98 lm w -1 . The CIE chromaticity coordinates of the LEDs are x = 0.6057 and y = 0.3137, which are close to the National Television Standard Committee (NTSC) standard values for red color. The results indicate that the complex may act as a red component in the fabrication of near UV InGaN-based white light-emitting diodes with high color-rendering index.

Red phosphorescent organic light-emitting diodes (PhOLEDs) based on a heteroleptic cyclometalated Iridium (III) complex

Energy Technology Data Exchange (ETDEWEB)

Lepeltier, Marc [Institut Lavoisier de Versailles, UMR 8180 CNRS, Université de Versailles Saint-Quentin en Yvelines, 45 avenue des Etats-Unis, 78035 Versailles Cedex (France); Dumur, Frédéric, E-mail: frederic.dumur@univ-amu.fr [Aix-Marseille Université, CNRS, ICR, UMR 7273, F-13397 Marseille (France); Wantz, Guillaume, E-mail: guillaume.wantz@ims-bordeaux.fr [University of Bordeaux, IMS, UMR 5218, F-33400 Talence (France); CNRS, IMS, UMR 5218, F-33400 Talence (France); Vila, Neus; Mbomekallé, Israel [Institut Lavoisier de Versailles, UMR 8180 CNRS, Université de Versailles Saint-Quentin en Yvelines, 45 avenue des Etats-Unis, 78035 Versailles Cedex (France); Bertin, Denis; Gigmes, Didier [Aix-Marseille Université, CNRS, ICR, UMR 7273, F-13397 Marseille (France); Mayer, Cédric R., E-mail: cmayer@lisv.uvsq.fr [Laboratoire d’Ingénierie des Systèmes de Versailles LISV – EA 4048, Université de Versailles Saint Quentin en Yvelines, 10/12 avenue de l’Europe, 78140 Vélizy (France)

2013-11-15

Highly efficient red-emitting Phosphorescent Organic Light-Emitting Diodes (PhOLEDs) based on a neutral vacuum-sublimatable heteroleptic iridium (III) complex have been designed and studied. Heteroleptic complex Ir(piq){sub 2}(acac) was prepared in one step with acetylacetone (acac) as the ancillary ligand. Electronic and spectroscopic properties of Ir(piq){sub 2}(acac) were investigated by UV–visible absorption, fluorescence spectroscopy and cyclic voltammetry. Electrophosphorescent devices comprising Ir(piq){sub 2}(acac) as dopant of TCTA exhibited outstanding electroluminescence performance with a current efficiency of 10.0 cd A{sup −1}, a maximum power efficiency of 7.2 lm W{sup −1} and a maximal brightness of 3540 cd m{sup −2} was reached at 8.0 V. CIE coordinates close to the standard red of the national television system committee were obtained (0.67, 0.33). -- Highlights: • A saturated red OLED has been prepared. • High power efficiency and brightness were obtained. • Thickness of the device was determined as a parameter determining the overall performance. • CIE coordinates close to the standard red of the national television system committee were obtained.

A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

International Nuclear Information System (INIS)

Chen Ping; Zhao De-Gang; Feng Mei-Xin; Jiang De-Sheng; Liu Zong-Shun; Yang Hui; Zhang Li-Qun; Li De-Yao; Liu Jian-Ping; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun

2013-01-01

An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A