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Sample records for high-power algainassb semiconductor

  1. Reduced filamentation in high power semiconductor lasers

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

    1999-01-01

    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  2. Low-confinement high-power semiconductor lasers

    Buda, M.

    1999-01-01

    This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

  3. High-power semiconductor RSD-based switch

    Bezuglov, V G; Galakhov, I V; Grusin, I A [All-Russian Scientific Research Inst. of Experimental Physics, Sarov (Russian Federation); and others

    1997-12-31

    The operating principle and test results of a high-power semiconductor RSD-based switch with the following operating parameters is described: operating voltage 25 kV, peak operating current 200 kA, maximum transferred charge 70 C. The switch is intended for use by high-power capacitor banks of state-of-the-art research facilities. The switch was evaluated for applicability in commercial pulsed systems. The possibility of increasing the peak operating current to 500 kA is demonstrated. (author). 4 figs., 2 refs.

  4. High Power Mid-IR Semiconductor Lasers for LADAR

    Lester, Luke

    2003-01-01

    The growing need for antimonide-based, room temperature, 2-5 micrometers, semiconductor lasers for trace gas spectroscopy, ultra-low loss communication, infrared countermeasures, and ladar motivated this work...

  5. High power semiconductor switching in the nanosecond regime

    Zucker, O.S.; Long, J.R.; Smith, V.L.; Page, D.J.; Roberts, J.S.

    1975-12-01

    Light activated multilayered silicon semiconductor devices have been used to switch at megawatt power levels with nanosecond turnon time. Current rate of rise of 700 kA/μs at 10 kA, with 1 kV across the load have been achieved. Recovery time of 1 millisec has been obtained. Applicability to fusion research needs is discussed

  6. Transparent ceramic photo-optical semiconductor high power switches

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  7. Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

    Minaev, V P

    2005-01-01

    High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

  8. Third harmonic generation of high power far infrared radiation in semiconductors

    Urban, M [Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)

    1996-04-01

    We investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 {mu}m and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 {mu}m laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. figs., tabs., refs.

  9. Third harmonic generation of high power far infrared radiation in semiconductors

    Urban, M.

    1996-04-01

    In this work we investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 μm and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 μm laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. (author) figs

  10. High powered pulsed plasma enhanced deposition of thin film semiconductor and optical materials

    Llewellyn, I.P.; Sheach, K.J.A.; Heinecke, R.A.

    1993-01-01

    A glow discharge deposition technique is described which allows the deposition of a large range of high quality materials without the requirement for substrate heating. The method is differentiated from conventional plasma deposition techniques in that a much higher degree of dissociation is achieved in the gases prior to deposition, such that thermally activated surface reactions are no longer required in order to produce a dense film. The necessary discharge intensity (>300Wcm -3 ) is achieved using a high power radio frequency generator which is pulsed at a low duty cycle (1%) to keep the average energy of the discharge low (100W), in order to avoid the discharge heating the substrate. In addition, by varying the gas composition between discharge pulses, layered structures of materials can be produced, with a disordered interface about 8 A thick. Various uses of the technique in semiconductor and optical filter production are described, and the properties of films deposited using these technique are presented. (orig.)

  11. High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

    Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.

    1994-01-01

    Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

  12. Transmission line pulse system for avalanche characterization of high power semiconductor devices

    Riccio, Michele; Ascione, Giovanni; De Falco, Giuseppe; Maresca, Luca; De Laurentis, Martina; Irace, Andrea; Breglio, Giovanni

    2013-05-01

    Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different

  13. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  14. Application of statistical methods (SPC) for an optimized control of the irradiation process of high-power semiconductors

    Mittendorfer, J.; Zwanziger, P.

    2000-01-01

    High-power bipolar semiconductor devices (thyristors and diodes) in a disc-type shape are key components (semiconductor switches) for high-power electronic systems. These systems are important for the economic design of energy transmission systems, i.e. high-power drive systems, static compensation and high-voltage DC transmission lines. In their factory located in Pretzfeld, Germany, the company, eupec GmbH+Co.KG (eupec), is producing disc-type devices with ceramic encapsulation in the high-end range for the world market. These elements have to fulfill special customer requirements and therefore deliver tailor-made trade-offs between their on-state voltage and dynamic switching behaviour. This task can be achieved by applying a dedicated electron irradiation on the semiconductor pellets, which tunes this trade-off. In this paper, the requirements to the irradiation company Mediscan GmbH, from the point of view of the semiconductor manufacturer, are described. The actual strategy for controlling the irradiation results to fulfill these requirements are presented, together with the choice of relevant parameters from the viewpoint of the irradiation company. The set of process parameters monitored, using statistical process control (SPC) techniques, includes beam current and energy, conveyor speed and irradiation geometry. The results are highlighted and show the successful co-operation in this business. Watching this process vice versa, an idea is presented and discussed to develop the possibilities of a highly sensitive dose detection device by using modified diodes, which could function as accurate yet cheap and easy-to-use detectors as routine dosimeters for irradiation institutes. (author)

  15. A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2018-01-01

    . This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

  16. Development of high power X-band semiconductor microwave switch for pulse compression systems of future linear colliders

    Fumihiko Tamura

    2002-06-01

    Full Text Available We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the TE_{01} mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm.

  17. Semiconductor laser engineering, reliability and diagnostics a practical approach to high power and single mode devices

    Epperlein, Peter W

    2013-01-01

    This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performa...

  18. High-order diffraction gratings for high-power semiconductor lasers

    Vasil’eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N.; Shashkin, I. S.; Tarasov, I. S.

    2012-01-01

    A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating ∼2 μm deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al 0.3 Ga 0.7 As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

  19. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Podoskin, A. A., E-mail: podoskin@mail.ioffe.ru; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  20. Blue 450nm high power semiconductor continuous wave laser bars exceeding rollover output power of 80W

    König, H.; Lell, A.; Stojetz, B.; Ali, M.; Eichler, C.; Peter, M.; Löffler, A.; Strauss, U.; Baumann, M.; Balck, A.; Malchus, J.; Krause, V.

    2018-02-01

    Industrial material processing like cutting or welding of metals is rather energy efficient using direct diode or diode pumped solid state lasers. However, many applications cannot be addressed by established infrared laser technology due to fundamental material properties of the workpiece: For example materials like copper or gold have too low absorption in the near infrared wavelength range to be processed efficiently by use of existing high power laser systems. The huge interest to enable high power kW systems with more suitable wavelengths in the blue spectral range triggered the German funded research project 'BLAULAS': Therein the feasibility and capability of CW operating high power laser bars based on the GaN material system was investigated by Osram and Laserline. High performance bars were enabled by defeating fundamental challenges like material quality as well as the chip processes, both of which differ significantly from well-known IR laser bars. The research samples were assembled on actively cooled heat sinks with hard solder technology. For the first time an output power of 98W per bar at 60A drive current was achieved. Conversion efficiency as high as 46% at 50W output power was demonstrated.

  1. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  2. Semiconductor

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  3. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    Rantamäki, Antti; Lyytikäinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G

    2011-01-01

    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  4. Final Report: High Power Semiconductor Laser Sources,

    1989-01-01

    Mittelstein, Yasuhiko Arakawa, ) Anders Larssonb) and Amnon Yariv California Institute of Technology, Pasadena, California 91 125~412 (Received 7 July...Electronics and Commu- nication Engineers of Japan. He is a member of the Institute of Electronics Yasuhiko Arakawa S󈨑-M󈨔) was born in Ai- and...Gain, Modulation Response, and Spectral Linewidth in AlGaAs Quantum Well Lasers YASUHIKO ARAKAWA. MEMBER, IEEE. AND AMNON YARIV. FELLOW. IEEE Abstract

  5. Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

    Ghosh, Kankat; Das, S.; Khiangte, K. R.; Choudhury, N.; Laha, Apurba

    2017-11-01

    We report structural and electrical properties of hexagonal Gd2O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as {{≤ft[ 0 0 0 1 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 0 0 0 1 \\right]}GaN} and {{≤ft[ 1 \\bar{1} 0 0 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 1 \\bar{1} 0 0 \\right]}GaN} . X-ray photoelectron measurements of the valence bands revealed that Gd2O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3Ga0.7N, respectively. Electrical measurements such as capacitance-voltage and leakage current characteristics further confirm that epi-Gd2O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.

  6. Automated System Tests High-Power MOSFET's

    Huston, Steven W.; Wendt, Isabel O.

    1994-01-01

    Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

  7. Driver Circuit For High-Power MOSFET's

    Letzer, Kevin A.

    1991-01-01

    Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

  8. High-power klystrons

    Siambis, John G.; True, Richard B.; Symons, R. S.

    1994-05-01

    Novel emerging applications in advanced linear collider accelerators, ionospheric and atmospheric sensing and modification and a wide spectrum of industrial processing applications, have resulted in microwave tube requirements that call for further development of high power klystrons in the range from S-band to X-band. In the present paper we review recent progress in high power klystron development and discuss some of the issues and scaling laws for successful design. We also discuss recent progress in electron guns with potential grading electrodes for high voltage with short and long pulse operation via computer simulations obtained from the code DEMEOS, as well as preliminary experimental results. We present designs for high power beam collectors.

  9. High power microwaves

    Benford, James; Schamiloglu, Edl

    2016-01-01

    Following in the footsteps of its popular predecessors, High Power Microwaves, Third Edition continues to provide a wide-angle, integrated view of the field of high power microwaves (HPMs). This third edition includes significant updates in every chapter as well as a new chapter on beamless systems that covers nonlinear transmission lines. Written by an experimentalist, a theorist, and an applied theorist, respectively, the book offers complementary perspectives on different source types. The authors address: * How HPM relates historically and technically to the conventional microwave field * The possible applications for HPM and the key criteria that HPM devices have to meet in order to be applied * How high power sources work, including their performance capabilities and limitations * The broad fundamental issues to be addressed in the future for a wide variety of source types The book is accessible to several audiences. Researchers currently in the field can widen their understanding of HPM. Present or pot...

  10. A High Power Linear Solid State Pulser

    Boris Yen; Brent Davis; Rex Booth

    1999-01-01

    Particle Accelerators require high voltage and often high power. Typically the high voltage/power generation utilizes a topology with an extra energy store and a switching means to extract that stored energy. The switches may be active or passive devices. Active switches are hard or soft vacuum tubes, or semiconductors. When required voltages exceed tens of kilovolts, numerous semiconductors are stacked to withstand that potential. Such topologies can use large numbers of critical parts that, when in series, compromise the system reliability and performance. This paper describes a modular, linear, solid state amplifier which uses a parallel array of semiconductors, coupled with transmission line transformers. Such a design can provide output signals with voltages exceeding 10kV (into 50-ohms), and with rise and fall times (10-90 % amplitude) that are less than 1--ns. This compact solid state amplifier is modular, and has both hot-swap and soft fail capabilities

  11. High-power electronics

    Kapitsa, Petr Leonidovich

    1966-01-01

    High-Power Electronics, Volume 2 presents the electronic processes in devices of the magnetron type and electromagnetic oscillations in different systems. This book explores the problems of electronic energetics.Organized into 11 chapters, this volume begins with an overview of the motion of electrons in a flat model of the magnetron, taking into account the in-phase wave and the reverse wave. This text then examines the processes of transmission of electromagnetic waves of various polarization and the wave reflection from grids made of periodically distributed infinite metal conductors. Other

  12. High Power Vanadate lasers

    Strauss

    2006-07-01

    Full Text Available stream_source_info Strauss1_2006.pdf.txt stream_content_type text/plain stream_size 3151 Content-Encoding UTF-8 stream_name Strauss1_2006.pdf.txt Content-Type text/plain; charset=UTF-8 Laser Research Institute... University of Stellenbosch www.laser-research.co.za High Power Vanadate lasers H.J.Strauss, Dr. C. Bollig, R.C. Botha, Prof. H.M. von Bergmann, Dr. J.P. Burger Aims 1) To develop new techniques to mount laser crystals, 2) compare the lasing properties...

  13. Design of the Trap Filter for the High Power Converters with Parallel Interleaved VSCs

    Gohil, Ghanshyamsinh Vijaysinh; Bede, Lorand; Teodorescu, Remus

    2014-01-01

    The power handling capability of the state-of-the-art semiconductor devices is limited. Therefore, the Voltage Source Converters (VSCs) are often connected in parallel to realize high power converter. The switching frequency semiconductor devices, used in the high power VSCs, is also limited...

  14. High power coaxial ubitron

    Balkcum, Adam J.

    In the ubitron, also known as the free electron laser, high power coherent radiation is generated from the interaction of an undulating electron beam with an electromagnetic signal and a static periodic magnetic wiggler field. These devices have experimentally produced high power spanning the microwave to x-ray regimes. Potential applications range from microwave radar to the study of solid state material properties. In this dissertation, the efficient production of high power microwaves (HPM) is investigated for a ubitron employing a coaxial circuit and wiggler. Designs for the particular applications of an advanced high gradient linear accelerator driver and a directed energy source are presented. The coaxial ubitron is inherently suited for the production of HPM. It utilizes an annular electron beam to drive the low loss, RF breakdown resistant TE01 mode of a large coaxial circuit. The device's large cross-sectional area greatly reduces RF wall heat loading and the current density loading at the cathode required to produce the moderate energy (500 keV) but high current (1-10 kA) annular electron beam. Focusing and wiggling of the beam is achieved using coaxial annular periodic permanent magnet (PPM) stacks without a solenoidal guide magnetic field. This wiggler configuration is compact, efficient and can propagate the multi-kiloampere electron beams required for many HPM applications. The coaxial PPM ubitron in a traveling wave amplifier, cavity oscillator and klystron configuration is investigated using linear theory and simulation codes. A condition for the dc electron beam stability in the coaxial wiggler is derived and verified using the 2-1/2 dimensional particle-in-cell code, MAGIC. New linear theories for the cavity start-oscillation current and gain in a klystron are derived. A self-consistent nonlinear theory for the ubitron-TWT and a new nonlinear theory for the ubitron oscillator are presented. These form the basis for simulation codes which, along

  15. Resonant High Power Combiners

    Langlois, Michel; Peillex-Delphe, Guy

    2005-01-01

    Particle accelerators need radio frequency sources. Above 300 MHz, the amplifiers mostly used high power klystrons developed for this sole purpose. As for military equipment, users are drawn to buy "off the shelf" components rather than dedicated devices. IOTs have replaced most klystrons in TV transmitters and find their way in particle accelerators. They are less bulky, easier to replace, more efficient at reduced power. They are also far less powerful. What is the benefit of very compact sources if huge 3 dB couplers are needed to combine the power? To alleviate this drawback, we investigated a resonant combiner, operating in TM010 mode, able to combine 3 to 5 IOTs. Our IOTs being able to deliver 80 kW C.W. apiece, combined power would reach 400 kW minus the minor insertion loss. Values for matching and insertion loss are given. The behavior of the system in case of IOT failure is analyzed.

  16. High Power Orbit Transfer Vehicle

    Gulczinski, Frank

    2003-01-01

    ... from Virginia Tech University and Aerophysics, Inc. to examine propulsion requirements for a high-power orbit transfer vehicle using thin-film voltaic solar array technologies under development by the Space Vehicles Directorate (dubbed PowerSail...

  17. High-power VCSELs for smart munitions

    Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

    2006-08-01

    The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

  18. High power klystrons for efficient reliable high power amplifiers

    Levin, M.

    1980-11-01

    This report covers the design of reliable high efficiency, high power klystrons which may be used in both existing and proposed troposcatter radio systems. High Power (10 kW) klystron designs were generated in C-band (4.4 GHz to 5.0 GHz), S-band (2.5 GHz to 2.7 GHz), and L-band or UHF frequencies (755 MHz to 985 MHz). The tubes were designed for power supply compatibility and use with a vapor/liquid phase heat exchanger. Four (4) S-band tubes were developed in the course of this program along with two (2) matching focusing solenoids and two (2) heat exchangers. These tubes use five (5) tuners with counters which are attached to the focusing solenoids. A reliability mathematical model of the tube and heat exchanger system was also generated.

  19. Autonomously managed high power systems

    Weeks, D.J.; Bechtel, R.T.

    1985-01-01

    The need for autonomous power management capabilities will increase as the power levels of spacecraft increase into the multi-100 kW range. The quantity of labor intensive ground and crew support consumed by the 9 kW Skylab cannot be afforded in support of a 75-300 kW Space Station or high power earth orbital and interplanetary spacecraft. Marshall Space Flight Center is managing a program to develop necessary technologies for high power system autonomous management. To date a reference electrical power system and automation approaches have been defined. A test facility for evaluation and verification of management algorithms and hardware has been designed with the first of the three power channel capability nearing completion

  20. Applications of high power microwaves

    Benford, J.; Swegle, J.

    1993-01-01

    The authors address a number of applications for HPM technology. There is a strong symbiotic relationship between a developing technology and its emerging applications. New technologies can generate new applications. Conversely, applications can demand development of new technological capability. High-power microwave generating systems come with size and weight penalties and problems associated with the x-radiation and collection of the electron beam. Acceptance of these difficulties requires the identification of a set of applications for which high-power operation is either demanded or results in significant improvements in peRFormance. The authors identify the following applications, and discuss their requirements and operational issues: (1) High-energy RF acceleration; (2) Atmospheric modification (both to produce artificial ionospheric mirrors for radio waves and to save the ozone layer); (3) Radar; (4) Electronic warfare; and (5) Laser pumping. In addition, they discuss several applications requiring high average power than border on HPM, power beaming and plasma heating

  1. Progress in semiconductor laser diodes: SPIE volume 723

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  2. High-power pulsed lasers

    Holzrichter, J.F.

    1980-01-01

    The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization

  3. High brightness semiconductor lasers with reduced filamentation

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  4. Optics assembly for high power laser tools

    Fraze, Jason D.; Faircloth, Brian O.; Zediker, Mark S.

    2016-06-07

    There is provided a high power laser rotational optical assembly for use with, or in high power laser tools for performing high power laser operations. In particular, the optical assembly finds applications in performing high power laser operations on, and in, remote and difficult to access locations. The optical assembly has rotational seals and bearing configurations to avoid contamination of the laser beam path and optics.

  5. High Power High Efficiency Diode Laser Stack for Processing

    Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

    2018-03-01

    High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

  6. High power microwave source development

    Benford, James N.; Miller, Gabriel; Potter, Seth; Ashby, Steve; Smith, Richard R.

    1995-05-01

    The requirements of this project have been to: (1) improve and expand the sources available in the facility for testing purposes and (2) perform specific tasks under direction of the Defense Nuclear Agency about the applications of high power microwaves (HPM). In this project the HPM application was power beaming. The requirements of this program were met in the following way: (1) We demonstrated that a compact linear induction accelerator can drive HPM sources at repetition rates in excess of 100 HZ at peak microwave powers of a GW. This was done for the relativistic magnetron. Since the conclusion of this contract such specifications have also been demonstrated for the relativistic klystron under Ballistic Missile Defense Organization funding. (2) We demonstrated an L band relativistic magnetron. This device has been used both on our single pulse machines, CAMEL and CAMEL X, and the repetitive system CLIA. (3) We demonstrated that phase locking of sources together in large numbers is a feasible technology and showed the generation of multigigawatt S-band radiation in an array of relativistic magnetrons.

  7. High power CW linac in PNC

    Toyama, S.; Wang, Y.L.; Emoto, T.

    1994-01-01

    Power Reactor and Nuclear Fuel Development Corporation (PNC) is developing a high power electron linac for various applications. The electron beam is accelerated in CW operation to get maximum beam current of 100 mA and energy of 10 MeV. Crucial components such as a high power L-band klystron and a high power traveling wave resonant ring (TWRR) accelerator guides were designed and manufactured and their performance were examined. These design and results from the recent high power RF tests were described in this paper. (author)

  8. Electronic DC transformer with high power density

    Pavlovský, M.

    2006-01-01

    This thesis is concerned with the possibilities of increasing the power density of high-power dc-dc converters with galvanic isolation. Three cornerstones for reaching high power densities are identified as: size reduction of passive components, reduction of losses particularly in active components

  9. Semiconductor statistics

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  10. Semiconductor physics

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  11. High Power Fiber Laser Test Bed

    Federal Laboratory Consortium — This facility, unique within DoD, power-combines numerous cutting-edge fiber-coupled laser diode modules (FCLDM) to integrate pumping of high power rare earth-doped...

  12. Switching power converters medium and high power

    Neacsu, Dorin O

    2013-01-01

    An examination of all of the multidisciplinary aspects of medium- and high-power converter systems, including basic power electronics, digital control and hardware, sensors, analog preprocessing of signals, protection devices and fault management, and pulse-width-modulation (PWM) algorithms, Switching Power Converters: Medium and High Power, Second Edition discusses the actual use of industrial technology and its related subassemblies and components, covering facets of implementation otherwise overlooked by theoretical textbooks. The updated Second Edition contains many new figures, as well as

  13. ICAN: High power neutral beam generation

    Moustaizis, S.D.; Lalousis, P.; Perrakis, K.; Auvray, P.; Larour, J.; Ducret, J.E.; Balcou, P.

    2015-01-01

    During the last few years there is an increasing interest on the development of alternative high power new negative ion source for Tokamak applications. The proposed new neutral beam device presents a number of advantages with respect to: the density current, the acceleration voltage, the relative compact dimension of the negative ion source, and the coupling of a high power laser beam for photo-neutralization of the negative ion beam. Here we numerically investigate, using a multi- fluid 1-D code, the acceleration and the extraction of high power ion beam from a Magnetically Insulated Diode (MID). The diode configuration will be coupled to a high power device capable of extracting a current up to a few kA with an accelerating voltage up to MeV. An efficiency of up to 92% of the coupling of the laser beam, is required in order to obtain a high power, up to GW, neutral beam. The new high energy, high average power, high efficiency (up to 30%) ICAN fiber laser is proposed for both the plasma generation and the photo-neutralizer configuration. (authors)

  14. High power communication satellites power systems study

    Josloff, A.T.; Peterson, J.R.

    1994-01-01

    This paper discusses a DOE-funded study to evaluate the commercial attractiveness of high power communication satellites and assesses the attributes of both conventional photovoltaic and reactor power systems. This study brings together a preeminent US Industry/Russian team to cooperate on the role of high power communication satellites in the rapidly expanding communications revolution. These high power satellites play a vital role in assuring availability of universally accessible, wide bandwidth communications, for high definition TV, super computer networks and other services. Satellites are ideally suited to provide the wide bandwidths and data rates required and are unique in the ability to provide services directly to the users. As new or relocated markets arise, satellites offer a flexibility that conventional distribution services cannot match, and it is no longer necessary to be near population centers to take advantage of the telecommunication revolution. The geopolitical implications of these substantially enhanced communications capabilities will be significant

  15. High power all solid state VUV lasers

    Zhang, Shen-jin; Cui, Da-fu; Zhang, Feng-feng; Xu, Zhi; Wang, Zhi-min; Yang, Feng; Zong, Nan; Tu, Wei; Chen, Ying; Xu, Hong-yan; Xu, Feng-liang; Peng, Qin-jun; Wang, Xiao-yang; Chen, Chuang-tian; Xu, Zu-yan

    2014-01-01

    Highlights: • Polarization and pulse repetition rate adjustable ps 177.3 nm laser was developed. • Wavelength tunable ns, ps and fs VUV lasers were developed. • High power ns 177.3 nm laser with narrow linewidth was investigated. - Abstract: We report the investigation on the high power all solid state vacuum ultra-violet (VUV) lasers by means of nonlinear frequency conversion with KBe 2 BO 3 F 2 (KBBF) nonlinear crystal. Several all solid state VUV lasers have developed in our group, including polarization and pulse repetition rate adjustable picosecond 177.3 nm VUV laser, wavelength tunable nanosecond, picosecond and femtosecond VUV lasers, high power ns 177.3 nm laser with narrow linewidth. The VUV lasers have impact, accurate and precise advantage

  16. Nitride semiconductor devices fundamentals and applications

    Morkoç, Hadis

    2013-01-01

    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  17. Optical engineering for high power laser applications

    Novaro, M.

    1993-01-01

    Laser facilities for Inertial Confinement Fusion (I.C.F.) experiments require laser and X ray optics able to withstand short pulse conditions. After a brief recall of high power laser system arrangements and of the characteristics of their optics, the authors will present some X ray optical developments

  18. Development of a high power femtosecond laser

    Neethling, PH

    2010-10-01

    Full Text Available The Laser Research Institute and the CSIR National Laser Centre are developing a high power femtosecond laser system in a joint project with a phased approach. The laser system consists of an fs oscillator and a regenerative amplifier. An OPCPA...

  19. Targets for high power neutral beams

    Kim, J.

    1980-01-01

    Stopping high-power, long-pulse beams is fast becoming an engineering challenge, particularly in neutral beam injectors for heating magnetically confined plasmas. A brief review of neutral beam target technology is presented along with heat transfer calculations for some selected target designs

  20. Semiconductor Manufacturing equipment introduction

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  1. Semiconductor spintronics

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  2. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

    Chi, Mingjun; Erbert, G.; Sumpf, B.

    2010-01-01

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

  3. New high power linacs and beam physics

    Wangler, T.P.; Gray, E.R.; Nath, S.; Crandall, K.R.; Hasegawa, K.

    1997-01-01

    New high-power proton linacs must be designed to control beam loss, which can lead to radioactivation of the accelerator. The threat of beam loss is increased significantly by the formation of beam halo. Numerical simulation studies have identified the space-charge interactions, especially those that occur in rms mismatched beams, as a major concern for halo growth. The maximum-amplitude predictions of the simulation codes must be subjected to independent tests to confirm the validity of the results. Consequently, the authors compare predictions from the particle-core halo models with computer simulations to test their understanding of the halo mechanisms that are incorporated in the computer codes. They present and discuss scaling laws that provide guidance for high-power linac design

  4. The high-power iodine laser

    Brederlow, G.; Fill, E.; Witte, K. J.

    The book provides a description of the present state of the art concerning the iodine laser, giving particular attention to the design and operation of pulsed high-power iodine lasers. The basic features of the laser are examined, taking into account aspects of spontaneous emission lifetime, hyperfine structure, line broadening and line shifts, stimulated emission cross sections, the influence of magnetic fields, sublevel relaxation, the photodissociation of alkyl iodides, flashlamp technology, excitation in a direct discharge, chemical excitation, and questions regarding the chemical kinetics of the photodissociation iodine laser. The principles of high-power operation are considered along with aspects of beam quality and losses, the design and layout of an iodine laser system, the scalability and prospects of the iodine laser, and the design of the single-beam Asterix III laser.

  5. Industrial Applications of High Power Ultrasonics

    Patist, Alex; Bates, Darren

    Since the change of the millennium, high-power ultrasound has become an alternative food processing technology applicable to large-scale commercial applications such as emulsification, homogenization, extraction, crystallization, dewatering, low-temperature pasteurization, degassing, defoaming, activation and inactivation of enzymes, particle size reduction, extrusion, and viscosity alteration. This new focus can be attributed to significant improvements in equipment design and efficiency during the late 1990 s. Like most innovative food processing technologies, high-power ultrasonics is not an off-the-shelf technology, and thus requires careful development and scale-up for each and every application. The objective of this chapter is to present examples of ultrasonic applications that have been successful at the commercialization stage, advantages, and limitations, as well as key learnings from scaling up an innovative food technology in general.

  6. High power RF oscillator with Marx generators

    Murase, Hiroshi; Hayashi, Izumi

    1980-01-01

    A method to maintain RF oscillation by using many Marx generators was proposed and studied experimentally. Many charging circuits were connected to an oscillator circuit, and successive pulsed charging was made. This successive charging amplified and maintained the RF oscillation. The use of vacuum gaps and high power silicon diodes improved the characteristics of RF current cut-off of the circuit. The efficiency of the pulsed charging from Marx generators to a condenser was theoretically investigated. The theoretical result showed the maximum efficiency of 0.98. The practical efficiency obtained by using a proposed circuit with a high power oscillator was in the range 0.50 to 0.56. The obtained effective output power of the RF pulses was 11 MW. The maximum holding time of the RF pulses was about 21 microsecond. (Kato, T.)

  7. High power communication satellites power systems study

    Josloff, Allan T.; Peterson, Jerry R.

    1995-01-01

    This paper discusses a planned study to evaluate the commercial attractiveness of high power communication satellites and assesses the attributes of both conventional photovoltaic and reactor power systems. These high power satellites can play a vital role in assuring availability of universally accessible, wide bandwidth communications, for high definition TV, super computer networks and other services. Satellites are ideally suited to provide the wide bandwidths and data rates required and are unique in the ability to provide services directly to the users. As new or relocated markets arise, satellites offer a flexibility that conventional distribution services cannot match, and it is no longer necessary to be near population centers to take advantage of the telecommunication revolution. The geopolitical implications of these substantially enhanced communications capabilities can be significant.

  8. High-power, high-efficiency FELs

    Sessler, A.M.

    1989-04-01

    High power, high efficiency FELs require tapering, as the particles loose energy, so as to maintain resonance between the electromagnetic wave and the particles. They also require focusing of the particles (usually done with curved pole faces) and focusing of the electromagnetic wave (i.e. optical guiding). In addition, one must avoid transverse beam instabilities (primarily resistive wall) and longitudinal instabilities (i.e sidebands). 18 refs., 7 figs., 3 tabs

  9. High Temperature, High Power Piezoelectric Composite Transducers

    Lee, Hyeong Jae; Zhang, Shujun; Bar-Cohen, Yoseph; Sherrit, StewarT.

    2014-01-01

    Piezoelectric composites are a class of functional materials consisting of piezoelectric active materials and non-piezoelectric passive polymers, mechanically attached together to form different connectivities. These composites have several advantages compared to conventional piezoelectric ceramics and polymers, including improved electromechanical properties, mechanical flexibility and the ability to tailor properties by using several different connectivity patterns. These advantages have led to the improvement of overall transducer performance, such as transducer sensitivity and bandwidth, resulting in rapid implementation of piezoelectric composites in medical imaging ultrasounds and other acoustic transducers. Recently, new piezoelectric composite transducers have been developed with optimized composite components that have improved thermal stability and mechanical quality factors, making them promising candidates for high temperature, high power transducer applications, such as therapeutic ultrasound, high power ultrasonic wirebonding, high temperature non-destructive testing, and downhole energy harvesting. This paper will present recent developments of piezoelectric composite technology for high temperature and high power applications. The concerns and limitations of using piezoelectric composites will also be discussed, and the expected future research directions will be outlined. PMID:25111242

  10. High Power UV LED Industrial Curing Systems

    Karlicek, Robert, F., Jr; Sargent, Robert

    2012-05-14

    UV curing is a green technology that is largely underutilized because UV radiation sources like Hg Lamps are unreliable and difficult to use. High Power UV LEDs are now efficient enough to replace Hg Lamps, and offer significantly improved performance relative to Hg Lamps. In this study, a modular, scalable high power UV LED curing system was designed and tested, performing well in industrial coating evaluations. In order to achieve mechanical form factors similar to commercial Hg Lamp systems, a new patent pending design was employed enabling high irradiance at long working distances. While high power UV LEDs are currently only available at longer UVA wavelengths, rapid progress on UVC LEDs and the development of new formulations designed specifically for use with UV LED sources will converge to drive more rapid adoption of UV curing technology. An assessment of the environmental impact of replacing Hg Lamp systems with UV LED systems was performed. Since UV curing is used in only a small portion of the industrial printing, painting and coating markets, the ease of use of UV LED systems should increase the use of UV curing technology. Even a small penetration of the significant number of industrial applications still using oven curing and drying will lead to significant reductions in energy consumption and reductions in the emission of green house gases and solvent emissions.

  11. Semiconductor spintronics

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  12. High-power LEDs for plant cultivation

    Tamulaitis, Gintautas; Duchovskis, Pavelas; Bliznikas, Zenius; Breive, Kestutis; Ulinskaite, Raimonda; Brazaityte, Ausra; Novickovas, Algirdas; Zukauskas, Arturas; Shur, Michael S.

    2004-10-01

    We report on high-power solid-state lighting facility for cultivation of greenhouse vegetables and on the results of the study of control of photosynthetic activity and growth morphology of radish and lettuce imposed by variation of the spectral composition of illumination. Experimental lighting modules (useful area of 0.22 m2) were designed based on 4 types of high-power light-emitting diodes (LEDs) with emission peaked in red at the wavelengths of 660 nm and 640 nm (predominantly absorbed by chlorophyll a and b for photosynthesis, respectively), in blue at 455 nm (phototropic function), and in far-red at 735 nm (important for photomorphology). Morphological characteristics, chlorophyll and phytohormone concentrations in radish and lettuce grown in phytotron chambers under lighting with different spectral composition of the LED-based illuminator and under illumination by high pressure sodium lamps with an equivalent photosynthetic photon flux density were compared. A well-balanced solid-state lighting was found to enhance production of green mass and to ensure healthy morphogenesis of plants compared to those grown using conventional lighting. We observed that the plant morphology and concentrations of morphologically active phytohormones is strongly affected by the spectral composition of light in the red region. Commercial application of the LED-based illumination for large-scale plant cultivation is discussed. This technology is favorable from the point of view of energy consumption, controllable growth, and food safety but is hindered by high cost of the LEDs. Large scale manufacturing of high-power red AlInGaP-based LEDs emitting at 650 nm and a further decrease of the photon price for the LEDs emitting in the vicinity of the absorption peak of chlorophylls have to be achieved to promote horticulture applications.

  13. High power VCSELs for miniature optical sensors

    Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

    2010-02-01

    Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

  14. High-power planar dielectric waveguide lasers

    Shepherd, D.P.; Hettrick, S.J.; Li, C.; Mackenzie, J.I.; Beach, R.J.; Mitchell, S.C.; Meissner, H.E.

    2001-01-01

    The advantages and potential hazards of using a planar waveguide as the host in a high-power diode-pumped laser system are described. The techniques discussed include the use of proximity-coupled diodes, double-clad waveguides, unstable resonators, tapers, and integrated passive Q switches. Laser devices are described based on Yb 3+ -, Nd 3+ -, and Tm 3+ -doped YAG, and monolithic and highly compact waveguide lasers with outputs greater than 10 W are demonstrated. The prospects for scaling to the 100 W level and for further integration of devices for added functionality in a monolithic laser system are discussed. (author)

  15. High power gyrotrons: a close perspective

    Kartikeyan, M.V.

    2012-01-01

    Gyrotrons and their variants, popularly known as gyrodevices are millimetric wave sources provide very high powers ranging from long pulse to continuous wave (CW) for various technological, scientific and industrial applications. From their conception (monotron-version) in the late fifties until their successful development for various applications, these devices have come a long way technologically and made an irreversible impact on both users and developers. The possible applications of high power millimeter and sub-millimeter waves from gyrotrons and their variants (gyro-devices) span a wide range of technologies. The plasma physics community has already taken advantage of the recent advances of gyrotrons in the areas of RF plasma production, heating, non-inductive current drive, plasma stabilization and active plasma diagnostics for magnetic confinement thermonuclear fusion research, such as lower hybrid current drive (LHCD) (8 GHz), electron cyclotron resonance heating (ECRH) (28-170-220 GHz), electron cyclotron current drive (ECCD), collective Thomson scattering (CTS), heat-wave propagation experiments, and space-power grid (SPG) applications. Other important applications of gyrotrons are electron cyclotron resonance (ECR) discharges for the generation of multi- charged ions and soft X-rays, as well as industrial materials processing and plasma chemistry. Submillimeter wave gyrotrons are employed in high frequency, broadband electron paramagnetic resonance (EPR) spectroscopy. Additional future applications await the development of novel high power gyro-amplifiers and devices for high resolution radar ranging and imaging in atmospheric and planetary science as well as deep space and specialized satellite communications, RF drivers for next generation high gradient linear accelerators (supercolliders), high resolution Doppler radar, radar ranging and imaging in atmospheric and planetary science, drivers for next-generation high-gradient linear accelerators

  16. High-power converters and AC drives

    Wu, Bin

    2017-01-01

    This new edition reflects the recent technological advancements in the MV drive industry, such as advanced multilevel converters and drive configurations. It includes three new chapters, Control of Synchronous Motor Drives, Transformerless MV Drives, and Matrix Converter Fed Drives. In addition, there are extensively revised chapters on Multilevel Voltage Source Inverters and Voltage Source Inverter-Fed Drives. This book includes a systematic analysis on a variety of high-power multilevel converters, illustrates important concepts with simulations and experiments, introduces various megawatt drives produced by world leading drive manufacturers, and addresses practical problems and their mitigations methods.

  17. An 8–18 GHz broadband high power amplifier

    Wang Lifa; Yang Ruixia; Li Yanlei; Wu Jingfeng

    2011-01-01

    An 8–18 GHz broadband high power amplifier (HPA) with a hybrid integrated circuit (HIC) is designed and fabricated. This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process. In order to decrease electromagnetic interference, a multilayer AlN material with good heat dissipation is adopted as the carrier of the power amplifier. When the input power is 25 dBm, the saturated power of the continuous wave (CW) outputted by the power amplifier is more than 39 dBm within the frequency range of 8–13 GHz, while it is more than 38.6 dBm within other frequency ranges. We obtain the peak power output, 39.4 dBm, at the frequency of 11.9 GHz. In the whole frequency band, the power-added efficiency is more than 18%. When the input power is 18 dBm, the small signal gain is 15.7 ± 0.7 dB. The dimensions of the HPA are 25 × 15 × 1.5 mm 3 . (semiconductor integrated circuits)

  18. 8. High power laser and ignition facilities

    Bayramian, A.J.; Beach, R.J.; Bibeau, C.

    2002-01-01

    This document gives a review of the various high power laser projects and ignition facilities in the world: the Mercury laser system and Electra (Usa), the krypton fluoride (KrF) laser and the HALNA (high average power laser for nuclear-fusion application) project (Japan), the Shenguang series, the Xingguang facility and the TIL (technical integration line) facility (China), the Vulcan peta-watt interaction facility (UK), the Megajoule project and its feasibility phase: the LIL (laser integration line) facility (France), the Asterix IV/PALS high power laser facility (Czech Republic), and the Phelix project (Germany). In Japan the 100 TW Petawatt Module Laser, constructed in 1997, is being upgraded to the world biggest peta-watt laser. Experiments have been performed with single-pulse large aperture e-beam-pumped Garpun (Russia) and with high-current-density El-1 KrF laser installation (Russia) to investigate Al-Be foil transmittance and stability to multiple e-beam irradiations. An article is dedicated to a comparison of debris shield impacts for 2 experiments at NIF (national ignition facility). (A.C.)

  19. High power neutral beam injection in LHD

    Tsumori, K.; Takeiri, Y.; Nagaoka, K.

    2005-01-01

    The results of high power injection with a neutral beam injection (NBI) system for the large helical device (LHD) are reported. The system consists of three beam-lines, and two hydrogen negative ion (H - ion) sources are installed in each beam-line. In order to improve the injection power, the new beam accelerator with multi-slot grounded grid (MSGG) has been developed and applied to one of the beam-lines. Using the accelerator, the maximum powers of 5.7 MW were achieved in 2003 and 2004, and the energy of 189 keV reached at maximum. The power and energy exceeded the design values of the individual beam-line for LHD. The other beam-lines also increased their injection power up to about 4 MW, and the total injection power of 13.1 MW was achieved with three beam-lines in 2003. Although the accelerator had an advantage in high power beam injection, it involved a demerit in the beam focal condition. The disadvantage was resolved by modifying the aperture shapes of the steering grid. (author)

  20. Powersail High Power Propulsion System Design Study

    Gulczinski, Frank S., III

    2000-11-01

    A desire by the United States Air Force to exploit the space environment has led to a need for increased on-orbit electrical power availability. To enable this, the Air Force Research Laboratory Space Vehicles Directorate (AFRL/ VS) is developing Powersail: a two-phased program to demonstrate high power (100 kW to 1 MW) capability in space using a deployable, flexible solar array connected to the host spacecraft using a slack umbilical. The first phase will be a proof-of-concept demonstration at 50 kW, followed by the second phase, an operational system at full power. In support of this program, the AFRL propulsion Directorate's Spacecraft Propulsion Branch (AFRL/PRS ) at Edwards AFB has commissioned a design study of the Powersail High Power Propulsion System. The purpose of this study, the results of which are summarized in this paper, is to perform mission and design trades to identify potential full-power applications (both near-Earth and interplanetary) and the corresponding propulsion system requirements and design. The design study shall farther identify a suitable low power demonstration flight that maximizes risk reduction for the fully operational system. This propulsion system is expected to be threefold: (1) primary propulsion for moving the entire vehicle, (2) a propulsion unit that maintains the solar array position relative to the host spacecraft, and (3) control propulsion for maintaining proper orientation for the flexible solar array.

  1. Oxide semiconductors

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  2. Semiconductor statistics

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  3. Reactor G1: high power experiments

    Laage, F. de; Teste du Baillet, A.; Veyssiere, A.; Wanner, G.

    1957-01-01

    The experiments carried out in the starting-up programme of the reactor G1 comprised a series of tests at high power, which allowed the following points to be studied: 1- Effect of poisoning by Xenon (absolute value, evolution). 2- Temperature coefficients of the uranium and graphite for a temperature distribution corresponding to heating by fission. 3- Effect of the pressure (due to the coiling system) on the reactivity. 4- Calibration of the security rods as a function of their position in the pile (1). 5- Temperature distribution of the graphite, the sheathing, the uranium and the air leaving the canals, in a pile running normally at high power. 6- Neutron flux distribution in a pile running normally at high power. 7- Determination of the power by nuclear and thermodynamic methods. These experiments have been carried out under two very different pile conditions. From the 1. to the 15. of August 1956, a series of power increases, followed by periods of stabilisation, were induced in a pile containing uranium only, in 457 canals, amounting to about 34 tons of fuel. A knowledge of the efficiency of the control rods in such a pile has made it possible to measure with good accuracy the principal effects at high temperatures, that is, to deal with points 1, 2, 3, 5. Flux charts giving information on the variations of the material Laplacian and extrapolation lengths in the reflector have been drawn up. Finally the thermodynamic power has been measured under good conditions, in spite of some installation difficulties. On September 16, the pile had its final charge of 100 tons. All the canals were loaded, 1,234 with uranium and 53 (i.e. exactly 4 per cent of the total number) with thorium uniformly distributed in a square lattice of 100 cm side. Since technical difficulties prevented the calibration of the control rods, the measurements were limited to the determination of the thermodynamic power and the temperature distributions (points 5 and 7). This report will

  4. Semiconductor Detectors

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  5. Splitting of high power, cw proton beams

    Alberto Facco

    2007-09-01

    Full Text Available A simple method for splitting a high power, continuous wave (cw proton beam in two or more branches with low losses has been developed in the framework of the EURISOL (European Isotope Separation On-Line Radioactive Ion Beam Facility design study. The aim of the system is to deliver up to 4 MW of H^{-} beam to the main radioactive ion beam production target, and up to 100 kW of proton beams to three more targets, simultaneously. A three-step method is used, which includes magnetic neutralization of a fraction of the main H^{-} beam, magnetic splitting of H^{-} and H^{0}, and stripping of H^{0} to H^{+}. The method allows slow raising and individual fine adjustment of the beam intensity in each branch.

  6. High power switches for ion induction linacs

    Humphries, S.; Savage, M.; Saylor, W.B.

    1985-01-01

    The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystronlike interaction with the accelerating cavities, leading to enhanced momentum spread. In this paper, we describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

  7. QED studies using high-power lasers

    Mattias Marklund

    2010-01-01

    Complete text of publication follows. The event of extreme lasers, which intensities above 10 22 W/cm 2 will be reached on a routine basis, will give us opportunities to probe new aspects of quantum electrodynamics. In particular, the non-trivial properties of the quantum vacuum can be investigated as we reach previously unattainable laser intensities. Effects such as vacuum birefringence and pair production in strong fields could thus be probed. The prospects of obtaining new insights regarding the non-perturbative structure of quantum field theories shows that the next generation laser facilities can be important tool for fundamental physical studies. Here we aim at giving a brief overview of such aspects of high-power laser physics.

  8. High power switches for ion induction linacs

    Humphries, S. Jr.; Savage, M.; Saylor, W.B.

    1985-01-01

    The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystron-like interaction with the accelerating cavities leading to enhanced momentum spread. In this paper, the author describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

  9. High power, repetitive stacked Blumlein pulse generators

    Davanloo, F; Borovina, D L; Korioth, J L; Krause, R K; Collins, C B [Univ. of Texas at Dallas, Richardson, TX (United States). Center for Quantum Electronics; Agee, F J [US Air Force Phillips Lab., Kirtland AFB, NM (United States); Kingsley, L E [US Army CECOM, Ft. Monmouth, NJ (United States)

    1997-12-31

    The repetitive stacked Blumlein pulse power generators developed at the University of Texas at Dallas consist of several triaxial Blumleins stacked in series at one end. The lines are charged in parallel and synchronously commuted with a single switch at the other end. In this way, relatively low charging voltages are multiplied to give a high discharge voltage across an arbitrary load. Extensive characterization of these novel pulsers have been performed over the past few years. Results indicate that they are capable of producing high power waveforms with rise times and repetition rates in the range of 0.5-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap, or photoconductive switch. The progress in the development and use of stacked Blumlein pulse generators is reviewed. The technology and the characteristics of these novel pulsers driving flash x-ray diodes are discussed. (author). 4 figs., 5 refs.

  10. Advanced Output Coupling for High Power Gyrotrons

    Read, Michael [Calabazas Creek Research, Inc., San Mateo, CA (United States); Ives, Robert Lawrence [Calabazas Creek Research, Inc., San Mateo, CA (United States); Marsden, David [Calabazas Creek Research, Inc., San Mateo, CA (United States); Collins, George [Calabazas Creek Research, Inc., San Mateo, CA (United States); Temkin, Richard [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Guss, William [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Lohr, John [General Atomics, La Jolla, CA (United States); Neilson, Jeffrey [Lexam Research, Redwood City, CA (United States); Bui, Thuc [Calabazas Creek Research, Inc., San Mateo, CA (United States)

    2016-11-28

    The Phase II program developed an internal RF coupler that transforms the whispering gallery RF mode produced in gyrotron cavities to an HE11 waveguide mode propagating in corrugated waveguide. This power is extracted from the vacuum using a broadband, chemical vapor deposited (CVD) diamond, Brewster angle window capable of transmitting more than 1.5 MW CW of RF power over a broad range of frequencies. This coupling system eliminates the Mirror Optical Units now required to externally couple Gaussian output power into corrugated waveguide, significantly reducing system cost and increasing efficiency. The program simulated the performance using a broad range of advanced computer codes to optimize the design. Both a direct coupler and Brewster angle window were built and tested at low and high power. Test results confirmed the performance of both devices and demonstrated they are capable of achieving the required performance for scientific, defense, industrial, and medical applications.

  11. Below-bandgap photoreflection spectroscopy of semiconductor laser structures

    Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

    2004-01-01

    A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

  12. High-power light-emitting diode based facility for plant cultivation

    Tamulaitis, G [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Duchovskis, P [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Bliznikas, Z [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Breive, K [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Ulinskaite, R [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Brazaityte, A [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Novickovas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Zukauskas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania)

    2005-09-07

    Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated.

  13. High-power light-emitting diode based facility for plant cultivation

    Tamulaitis, G; Duchovskis, P; Bliznikas, Z; Breive, K; Ulinskaite, R; Brazaityte, A; Novickovas, A; Zukauskas, A

    2005-01-01

    Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated

  14. Semiconductor sensors

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  15. Semiconductor Optics

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  16. Thermal Impact Analysis of Circulating Current in High Power Modular Online Uninterruptible Power Supplies Application

    Zhang, Chi; Guerrero, Josep M.; Quintero, Juan Carlos Vasquez

    2017-01-01

    In modular uninterruptible power supplies (UPSs), several DC/AC modules are required to work in parallel. This structure allows the system to be more reliable and flexible. These DC/AC modules share the same DC bus and AC critical bus. Module differences, such as filter inductor, filter capacitor......, control parameters, and so on, will make it possible for the potential zero sequence current to flow among the modules. This undesired type of circulating current will bring extra losses to the power semiconductor devices in the system, which should be paid special attention in high power application...... scenarios. In this paper, plug’n’play modules and cycle control are discussed and validated through experimental results. Moreover, potential zero sequence circulating current impact on power semiconductor devices thermal performance is also analyzed in this paper....

  17. High power diode lasers converted to the visible

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.

    2017-01-01

    High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....

  18. Semiconductor annealing

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  19. Three-phase multilevel inverter configuration for open-winding high power application

    Sanjeevikumar, Padmanaban; Blaabjerg, Frede; Wheeler, Patrick William

    2015-01-01

    This paper work exploits a new dual open-winding three-phase multilevel inverter configuration suitable for high power medium-voltage applications. Modular structure comprised of standard three-phase voltage source inverter (VSI) along with one additional bi-directional semiconductor device (MOSFET...... for implementation purpose. Proposed dual-inverter configuration generates multilevel outputs with benefit includes reduced THD and dv/dt in comparison to other dual-inverter topologies. Complete model of the multilevel ac drive is developed with simple MSCFM modulation in Matlab/PLECs numerical software...

  20. Test of a High Power Target Design

    2002-01-01

    %IS343 :\\\\ \\\\ A high power tantalum disc-foil target (RIST) has been developed for the proposed radioactive beam facility, SIRIUS, at the Rutherford Appleton Laboratory. The yield and release characteristics of the RIST target design have been measured at ISOLDE. The results indicate that the yields are at least as good as the best ISOLDE roll-foil targets and that the release curves are significantly faster in most cases. Both targets use 20 -25 $\\mu$m thick foils, but in a different internal geometry.\\\\ \\\\Investigations have continued at ISOLDE with targets having different foil thickness and internal geometries in an attempt to understand the release mechanisms and in particular to maximise the yield of short lived isotopes. A theoretical model has been developed which fits the release curves and gives physical values of the diffusion constants.\\\\ \\\\The latest target is constructed from 2 $\\mu$m thick tantalum foils (mass only 10 mg) and shows very short release times. The yield of $^{11}$Li (half-life of ...

  1. High power diode laser remelting of metals

    Chmelickova, H; Tomastik, J; Ctvrtlik, R; Supik, J; Nemecek, S; Misek, M

    2014-01-01

    This article is focused on the laser surface remelting of the steel samples with predefined overlapping of the laser spots. The goal of our experimental work was to evaluate microstructure and hardness both in overlapped zone and single pass ones for three kinds of ferrous metals with different content of carbon, cast iron, non-alloy structural steel and tool steel. High power fibre coupled diode laser Laserline LDF 3600-100 was used with robotic guided processing head equipped by the laser beam homogenizer that creates rectangular beam shape with uniform intensity distribution. Each sample was treated with identical process parameters - laser power, beam diameter, focus position, speed of motion and 40% spot overlap. Dimensions and structures of the remelted zone, zone of the partial melting, heat affected zone and base material were detected and measured by means of laser scanning and optical microscopes. Hardness progress in the vertical axis of the overlapped zone from remelted surface layer to base material was measured and compared with the hardness of the single spots. The most hardness growth was found for cast iron, the least for structural steel. Experiment results will be used to processing parameters optimization for each tested material separately.

  2. High power accelerator for environmental application

    Han, B.; Kim, J.K.; Kim, Y.R.; Kim, S.M.

    2011-01-01

    The problems of environmental damage and degradation of natural resources are receiving increasing attention throughout the world. The increased population, higher living standards, increased urbanization and enhanced industrial activities of humankind are all leading to degradation of the environment. Increasing urbanization has been accompanied by significant environmental pollution, given the seriousness of the situation and future risk of crises, there is an urgent need to develop the efficient technologies including economical treatment methods. Therefore, cost-effective treatment of the stack gases, wastewater and sludge containing refractory pollutant with electron beam is actively studied in EB TECH Co. Electron beam treatment of such hazardous wastes is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from radiolysis. However, to have advantages over existing processes, the electron beam process should have cost-effective and reliable in operation. Therefore high power accelerators (400kW~1MW) are developed for environmental application and they show the decrease in the cost of construction and operation of electron beam plant. In other way to reduce the cost for treatment, radical reactions accompanied by the other processes are introduced, and the synergistic effect upon the use of combined methods such as electron beam treatment with catalytic system, biological treatment and physico-chemical adsorption and others also show the improvement of the effect of electron beam treatment. (author)

  3. High-power pure blue laser diodes

    Ohta, M.; Ohizumi, Y.; Hoshina, Y.; Tanaka, T.; Yabuki, Y.; Goto, S.; Ikeda, M. [Development Center, Sony Shiroishi Semiconductor Inc., Miyagi (Japan); Funato, K. [Materials Laboratories, Sony Corporation, Kanagawa (Japan); Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, Kanagawa (Japan)

    2007-06-15

    We successfully developed high-power and long-lived pure blue laser diodes (LDs) having an emission wavelength of 440-450 nm. The pure-blue LDs were grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates. The dislocation density was successfully reduced to {proportional_to}10{sup 6} cm{sup -2} by optimizing the MOCVD growth conditions and the active layer structure. The vertical layer structure was designed to have an absorption loss of 4.9 cm{sup -1} and an internal quantum efficiency of 91%. We also reduced the operating current density to 6 kA/cm{sup 2} under 750 mW continuous-wave operation at 35 C by optimizing the stripe width to 12 {mu}m and the cavity length to 2000 {mu}m. The half lifetimes in constant current mode are estimated to be longer than 10000 h. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Improved Collectors for High Power Gyrotrons

    Ives, R. Lawrence; Singh, Amarjit; Read, Michael; Borchard, Philipp; Neilson, Jeff

    2009-01-01

    High power gyrotrons are used for electron cyclotron heating, current drive and parasitic mode suppression in tokamaks for fusion energy research. These devices are crucial for successful operation of many research programs around the world, including the ITER program currently being constructed in France. Recent gyrotron failures resulted from cyclic fatigue of the copper material used to fabricated the collectors. The techniques used to collect the spent beam power is common in many gyrotrons produced around the world. There is serious concern that these tubes may also be at risk from cyclic fatigue. This program addresses the cause of the collector failure. The Phase I program successfully demonstrated feasibility of a mode of operation that eliminates the cyclic operation that caused the failure. It also demonstrated that new material can provide increased lifetime under cyclic operation that could increase the lifetime by more than on order of magnitude. The Phase II program will complete that research and develop a collector that eliminates the fatigue failures. Such a design would find application around the world.

  5. High power accelerator for environmental application

    Han, B.; Kim, J. K.; Kim, Y. R.; Kim, S. M. [EB-TECH Co., Ltd., Yuseong-gu Daejeon (Korea, Republic of)

    2011-07-01

    The problems of environmental damage and degradation of natural resources are receiving increasing attention throughout the world. The increased population, higher living standards, increased urbanization and enhanced industrial activities of humankind are all leading to degradation of the environment. Increasing urbanization has been accompanied by significant environmental pollution, given the seriousness of the situation and future risk of crises, there is an urgent need to develop the efficient technologies including economical treatment methods. Therefore, cost-effective treatment of the stack gases, wastewater and sludge containing refractory pollutant with electron beam is actively studied in EB TECH Co. Electron beam treatment of such hazardous wastes is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from radiolysis. However, to have advantages over existing processes, the electron beam process should have cost-effective and reliable in operation. Therefore high power accelerators (400kW~1MW) are developed for environmental application and they show the decrease in the cost of construction and operation of electron beam plant. In other way to reduce the cost for treatment, radical reactions accompanied by the other processes are introduced, and the synergistic effect upon the use of combined methods such as electron beam treatment with catalytic system, biological treatment and physico-chemical adsorption and others also show the improvement of the effect of electron beam treatment. (author)

  6. Visible high power fiber coupled diode lasers

    Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

    2018-02-01

    In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

  7. High power accelerators and wastewater treatment

    Han, B.; Kim, J.K.; Kim, Y.R.; Kim, S.M.; Makaov, I.E.; Ponomarev, A.V.

    2006-01-01

    The problems of environmental damage and degradation of natural resources are receiving increasing attention throughout the world. The increased population, higher living standards, increased urbanization and enhanced industrial activities of humankind are all leading to degradation of the environment. Increasing urbanization has been accompanied by significant water pollution. Given the seriousness of the situation and future risk of crises, there is an urgent need to develop the water-efficient technologies including economical treatment methods of wastewater and polluted water. Therefore, cost-effective treatment of the municipal and industrial wastewater containing refractory pollutant with electron beam is actively studied in EB TECH Co.. Electron beam treatment of wastewater is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from water radiolysis (hydrated electron, OH free radical and H atom). However, to have advantages over existing processes, the electron beam process should have cost-effective and reliable in operation. Therefore high power accelerators (400kW∼1MW) are developed for environmental application and they show the decrease in the cost of construction and operation of electron beam plant. In other way to reduce the cost for wastewater treatment, radical reactions accompanied by the other processes are introduced, and the synergistic effect upon the use of combined methods such as electron beam treatment with ozonation, biological treatment and physico-chemical adsorption and others also show the improvement of the effect of electron beam treatment for the wastewater purification. (author)

  8. Interaction of high power ultrashort laser pulses with plasmas

    Geissler, M.

    2000-12-01

    The invention of short laser-pulses has opened a vast application range from testing ultra high-speed semiconductor devices to precision material processing, from triggering and tracing chemical reactions to sophisticated surgical applications in opthalmology and neurosurgery. In physical science, ultrashort light pulses enable researchers to follow ultrafast relaxation processes in the microcosm on time scale never before accessible and study light-matter-interactions at unprecedented intensity levels. The aim of this thesis is to investigate the interaction of ultrashort high power laser pulses with plasmas for a broad intensity range. First the ionization of atoms with intense laser fields is investigated. For sufficient strong and low frequent laser pulses, electrons can be removed from the core by a tunnel process through a potential barrier formed by the electric field of the laser. This mechanism is described by a well-established theory, but the interaction of few-cycle laser pulses with atoms can lead to regimes where the tunnel theory loses its validity. This regime is investigated and a new description of the ionization is found. Although the ionization plays a major role in many high-energy laser processes, there exist no simple and complete model for the evolution of laser pulses in field-ionizing media. A new propagation equation and the polarization response for field-ionizing media are presented and the results are compared with experimental data. Further the interaction of high power laser radiation with atoms result in nonlinear response of the electrons. The spectrum of this induced nonlinear dipole moment reaches beyond visible wavelengths into the x-ray regime. This effect is known as high harmonic generation (HHG) and is a promising tool for the generation of coherent shot wavelength radiation, but the conversions are still not efficient enough for most practical applications. Phase matching schemes to overcome the limitation are discussed

  9. 14 CFR 101.25 - Operating limitations for Class 2-High Power Rockets and Class 3-Advanced High Power Rockets.

    2010-01-01

    ... Power Rockets and Class 3-Advanced High Power Rockets. 101.25 Section 101.25 Aeronautics and Space... OPERATING RULES MOORED BALLOONS, KITES, AMATEUR ROCKETS AND UNMANNED FREE BALLOONS Amateur Rockets § 101.25 Operating limitations for Class 2-High Power Rockets and Class 3-Advanced High Power Rockets. When operating...

  10. Application of high power microwave vacuum electron devices

    Ding Yaogen; Liu Pukun; Zhang Zhaochuan; Wang Yong; Shen Bin

    2011-01-01

    High power microwave vacuum electron devices can work at high frequency, high peak and average power. They have been widely used in military and civil microwave electron systems, such as radar, communication,countermeasure, TV broadcast, particle accelerators, plasma heating devices of fusion, microwave sensing and microwave heating. In scientific research, high power microwave vacuum electron devices are used mainly on high energy particle accelerator and fusion research. The devices include high peak power klystron, CW and long pulse high power klystron, multi-beam klystron,and high power gyrotron. In national economy, high power microwave vacuum electron devices are used mainly on weather and navigation radar, medical and radiation accelerator, TV broadcast and communication system. The devices include high power pulse and CW klystron, extended interaction klystron, traveling wave tube (TWT), magnetron and induced output tube (IOT). The state of art, common technology problems and trends of high power microwave vacuum electron devices are introduced in this paper. (authors)

  11. The Jefferson Lab High Power Light Source

    James R. Boyce

    2006-01-01

    Jefferson Lab has designed, built and operated two high average power free-electron lasers (FEL) using superconducting RF (SRF) technology and energy recovery techniques. Between 1999-2001 Jefferson Lab operated the IR Demo FEL. This device produced over 2 kW in the mid-infrared, in addition to producing world record average powers in the visible (50 W), ultraviolet (10 W) and terahertz range (50 W) for tunable, short-pulse (< ps) light. This FEL was the first high power demonstration of an accelerator configuration that is being exploited for a number of new accelerator-driven light source facilities that are currently under design or construction. The driver accelerator for the IR Demo FEL uses an Energy Recovered Linac (ERL) configuration that improves the energy efficiency and lowers both the capital and operating cost of such devices by recovering most of the power in the spent electron beam after optical power is extracted from the beam. The IR Demo FEL was de-commissioned in late 2001 for an upgraded FEL for extending the IR power to over 10 kW and the ultraviolet power to over 1 kW. The FEL Upgrade achieved 10 kW of average power in the mid-IR (6 microns) in July of 2004, and its IR operation currently is being extended down to 1 micron. In addition, we have demonstrated the capability of on/off cycling and recovering over a megawatt of electron beam power without diminishing machine performance. A complementary UV FEL will come on-line within the next year. This paper presents a summary of the FEL characteristics, user community accomplishments with the IR Demo, and planned user experiments.

  12. Semiconductor annealing

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  13. Review of wide band-gap semiconductors technology

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  14. High Power Flex-Propellant Arcjet Performance

    Litchford, Ron J.

    2011-01-01

    implied nearly frozen flow in the nozzle and yielded performance ranges of 800-1100 sec for hydrogen and 400-600 sec for ammonia. Inferred thrust-to-power ratios were in the range of 30-10 lbf/MWe for hydrogen and 60-20 lbf/MWe for ammonia. Successful completion of this test series represents a fundamental milestone in the progression of high power arcjet technology, and it is hoped that the results may serve as a reliable touchstone for the future development of MW-class regeneratively-cooled flex-propellant plasma rockets.

  15. High power infrared QCLs: advances and applications

    Patel, C. Kumar N.

    2012-01-01

    QCLs are becoming the most important sources of laser radiation in the midwave infrared (MWIR) and longwave infrared (LWIR) regions because of their size, weight, power and reliability advantages over other laser sources in the same spectral regions. The availability of multiwatt RT operation QCLs from 3.5 μm to >16 μm with wall plug efficiency of 10% or higher is hastening the replacement of traditional sources such as OPOs and OPSELs in many applications. QCLs can replace CO2 lasers in many low power applications. Of the two leading groups in improvements in QCL performance, Pranalytica is the commercial organization that has been supplying the highest performance QCLs to various customers for over four year. Using a new QCL design concept, the non-resonant extraction [1], we have achieved CW/RT power of >4.7 W and WPE of >17% in the 4.4 μm - 5.0 μm region. In the LWIR region, we have recently demonstrated QCLs with CW/RT power exceeding 1 W with WPE of nearly 10 % in the 7.0 μm-10.0 μm region. In general, the high power CW/RT operation requires use of TECs to maintain QCLs at appropriate operating temperatures. However, TECs consume additional electrical power, which is not desirable for handheld, battery-operated applications, where system power conversion efficiency is more important than just the QCL chip level power conversion efficiency. In high duty cycle pulsed (quasi-CW) mode, the QCLs can be operated without TECs and have produced nearly the same average power as that available in CW mode with TECs. Multiwatt average powers are obtained even in ambient T>70°C, with true efficiency of electrical power-to-optical power conversion being above 10%. Because of the availability of QCLs with multiwatt power outputs and wavelength range covering a spectral region from ~3.5 μm to >16 μm, the QCLs have found instantaneous acceptance for insertion into multitude of defense and homeland security applications, including laser sources for infrared

  16. The JLab high power ERL light source

    Neil, G.R.; Behre, C.; Benson, S.V.

    2006-01-01

    discuss some of the discoveries we have made concerning the physics performance, design optimization, and operational limitations of such a first generation high power ERL light source

  17. The JLab high power ERL light source

    G.R. Neil; C. Behre; S.V. Benson; M. Bevins; G. Biallas; J. Boyce; J. Coleman; L.A. Dillon-Townes; D. Douglas; H.F. Dylla; R. Evans; A. Grippo; D. Gruber; J. Gubeli; D. Hardy; C. Hernandez-Garcia; K. Jordan; M.J. Kelley; L. Merminga; J. Mammosser; W. Moore; N. Nishimori; E. Pozdeyev; J. Preble; R. Rimmer; Michelle D. Shinn; T. Siggins; C. Tennant; R. Walker; G.P. Williams and S. Zhang

    2005-03-19

    concerning the physics performance, design optimization, and operational limitations of such a first generation high power ERL light source.

  18. Magnetic semiconductors

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  19. Semiconductor Laser Measurements Laboratory

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  20. Welding with high power fiber lasers - A preliminary study

    Quintino, L.; Costa, A.; Miranda, R.; Yapp, D.; Kumar, V.; Kong, C.J.

    2007-01-01

    The new generation of high power fiber lasers presents several benefits for industrial purposes, namely high power with low beam divergence, flexible beam delivery, low maintenance costs, high efficiency and compact size. This paper presents a brief review of the development of high power lasers, and presents initial data on welding of API 5L: X100 pipeline steel with an 8 kW fiber laser. Weld bead geometry was evaluated and transition between conduction and deep penetration welding modes was investigated

  1. Lifetime laser damage performance of β-Ga2O3 for high power applications

    Jae-Hyuck Yoo

    2018-03-01

    Full Text Available Gallium oxide (Ga2O3 is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2. This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

  2. Lifetime laser damage performance of β -Ga2O3 for high power applications

    Yoo, Jae-Hyuck; Rafique, Subrina; Lange, Andrew; Zhao, Hongping; Elhadj, Selim

    2018-03-01

    Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

  3. Semiconductor laser shearing interferometer

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  4. In-volume heating using high-power laser diodes

    Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

    2015-01-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface

  5. High-power sputtering employed for film deposition

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  6. Improved cutting performance in high power laser cutting

    Olsen, Flemming Ove

    2003-01-01

    Recent results in high power laser cutting especially with focus on cutting of mild grade steel types for shipbuilding are described.......Recent results in high power laser cutting especially with focus on cutting of mild grade steel types for shipbuilding are described....

  7. heat flow in a finite isolated pulsed avalanche semiconductor diode

    ES Obe

    1981-03-01

    Mar 1, 1981 ... high-power high-efficiency avalanche semiconductor devices. The ... computed, and useful practical design curves for a specified operation .... iv. For spherical shells of radius, ρ(x,y,z) = √x2+y2+z2. > R, the heat source.

  8. Semiconductor nanostructures

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  9. Experiments on high power EB evaporation of niobium

    Kandaswamy, E.; Bhardwaj, R.L.; Ram Gopal; Ray, A.K.; Kulgod, S.V.

    2002-01-01

    Full text: The versatility of electron beam evaporation makes the deposition of many new and unusual materials possible. This technique offers freedom from contamination and precise control. High power electron guns are especially used for obtaining high evaporation rates for large area coatings. This paper deals with the coating experiments carried out on an indigenously developed high power strip electron gun with niobium as evaporant at 40 kW on S.S. substrate. The practical problems of conditioning the gun and venting the vacuum system after the high power operation are also discussed. The coating rate was calculated by weight difference method

  10. Design of high power feedthrough for High Power Industrial Accelerator (HPIA)

    Soni, Rakesh Kumar; Kumar, Abhay; Dwivedi, Jishnu; Kumar, Pankaj; Goswami, S.G.

    2011-01-01

    This paper reports the design, assembly and dismantling and maintenance of a feedthrough for High Power Industrial Accelerator (HPIA). It has been designed to serve three purposes. It provides electrical insulation between primary windings (at ∼ 2.5 kV) and cover flange (at ground potential) with the help of Nylon bushes. It also ensures leak tightness for SF 6 gas filled inside the vessel at 10 bar. It also provides sealing for water connectors between the primary winding and secondary winding. The key function of this feedthrough is to supply ∼ 800 A of current to the primary circuit. Technical requirement/constraint is leak tightness and electrical isolation of feedthrough. This feedthrough will be connected to the primary windings inside the vessel. Current will flow through a copper tube conductor which is at a potential of ∼ 800 V. Inside the tube water is flowing. Inlet water temperature is ∼ 30℃. Flow rate of water is 35 litres/minute at 6 kg/cm 2 pressure to remove the heat losses. (author)

  11. High-Temperature, Wirebondless, Ultra-Compact Wide Bandgap Power Semiconductor Modules for Space Power Systems, Phase I

    National Aeronautics and Space Administration — Silicon carbide (SiC) and other wide band-gap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and...

  12. Fundamentals of semiconductor devices

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  13. Overview on the high power excimer laser technology

    Liu, Jingru

    2013-05-01

    High power excimer laser has essential applications in the fields of high energy density physics, inertial fusion energy and industry owing to its advantages such as short wavelength, high gain, wide bandwidth, energy scalable and repetition operating ability. This overview is aimed at an introduction and evaluation of enormous endeavor of the international high power excimer laser community in the last 30 years. The main technologies of high power excimer laser are reviewed, which include the pumping source technology, angular multiplexing and pulse compressing, beam-smoothing and homogenous irradiation, high efficiency and repetitive operation et al. A high power XeCl laser system developed in NINT of China is described in detail.

  14. High Power Room Temperature Terahertz Local Oscillator, Phase I

    National Aeronautics and Space Administration — We propose to build a high-power, room temperature compact continuous wave terahertz local oscillator for driving heterodyne receivers in the 1-5 THz frequency...

  15. Advanced Capacitors for High-Power Applications, Phase I

    National Aeronautics and Space Administration — As the consumer and industrial requirements for compact, high-power-density, electrical power systems grow substantially over the next decade; there will be a...

  16. High Power Uplink Amplifier for Deep Space Communications, Phase II

    National Aeronautics and Space Administration — Critical to the success of delivering on the promise of deep space optical communications is the creation of a stable and reliable high power multichannel optical...

  17. High Power Uplink Amplifier for Deep Space Communications, Phase I

    National Aeronautics and Space Administration — Critical to the success of delivering on the promise of deep space optical communications is the creation of a stable and reliable high power multichannel optical...

  18. High-power microwave LDMOS transistors for wireless data transmission technologies (Review)

    Kuznetsov, E. V.; Shemyakin, A. V.

    2010-01-01

    The fields of the application, structure, fabrication, and packaging technology of high-power microwave LDMOS transistors and the main advantages of these devices were analyzed. Basic physical parameters and some technology factors were matched for optimum device operation. Solid-state microwave electronics has been actively developed for the last 10-15 years. Simultaneously with improvement of old devices, new devices and structures are actively being adopted and developed and new semiconductor materials are being commercialized. Microwave LDMOS technology is in demand in such fields as avionics, civil and military radars, repeaters, base stations of cellular communication systems, television and broadcasting transmitters, and transceivers for high-speed wireless computer networks (promising Wi-Fi and Wi-Max standards).

  19. Graphene electric double layer capacitor with ultra-high-power performance

    Miller, John R.; Outlaw, R.A.; Holloway, B.C.

    2011-01-01

    We have demonstrated, for the first time, efficient 120 Hz filtering by an electric double layer capacitor (EDLC). The key to this ultra-high-power performance is electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized both electronic and ionic resistance and produced capacitors having RC time-constants of less than 200 μs. Significantly, graphene nanosheets have a preponderance of exposed edge planes that greatly increase stored charge over designs relying on basal plane surfaces. Collectively these factors make vertically oriented graphene nanosheet electrodes ideally suited for producing high-frequency EDLCs. Capacitors constructed with these electrodes are predicted to be significantly smaller than aluminum electrolyte capacitors that they could functionally replace plus be manufactured using standard semiconductor process equipment, creating interesting commercial opportunities.

  20. Atmospheric Propagation and Combining of High-Power Lasers

    2015-09-08

    Brightness-scaling potential of actively phase- locked solid state laser arrays,” IEEE J. Sel. Topics Quantum Electron., vol. 13, no. 3, pp. 460–472, May...attempting to phase- lock high-power lasers, which is not encountered when phase- locking low-power lasers, for example mW power levels. Regardless, we...technology does not currently exist. This presents a challenging problem when attempting to phase- lock high-power lasers, which is not encountered when

  1. Broadband and High power Reactive Jamming Resilient Wireless Communication

    2017-10-21

    Broadband and High -power Reactive Jamming Resilient Wireless Communication The views, opinions and/or findings contained in this report are those of... available in extremely hostile environments, where FHSS and DSSS are completely defeated by a broadband and high -power reactive jammer. b. Wireless...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6. AUTHORS

  2. High power laser downhole cutting tools and systems

    Zediker, Mark S; Rinzler, Charles C; Faircloth, Brian O; Koblick, Yeshaya; Moxley, Joel F

    2015-01-20

    Downhole cutting systems, devices and methods for utilizing 10 kW or more laser energy transmitted deep into the earth with the suppression of associated nonlinear phenomena. Systems and devices for the laser cutting operations within a borehole in the earth. These systems and devices can deliver high power laser energy down a deep borehole, while maintaining the high power to perform cutting operations in such boreholes deep within the earth.

  3. Design of measurement equipment for high power laser beam shapes

    Hansen, K. S.; Olsen, F. O.; Kristiansen, Morten

    2013-01-01

    To analyse advanced high power beam patterns, a method, which is capable of analysing the intensity distribution in 3D is needed. Further a measuring of scattered light in the same system is preferred. This requires a high signal to noise ratio. Such a system can be realised by a CCD-chip impleme...... by a commercial product has been done. The realised system might suffer from some thermal drift at high power; future work is to clarify this....

  4. Numerical simulations of novel high-power high-brightness diode laser structures

    Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

    2001-07-01

    One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

  5. Solid spectroscopy: semiconductors

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  6. Large-area high-power VCSEL pump arrays optimized for high-energy lasers

    Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

    2012-06-01

    Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

  7. Feasibility Study for High Power RF – Energy Recovery in Particle Accelerators

    Betz, Michael

    2010-01-01

    When dealing with particle accelerators, especially in systems with travelling wave structures and low beam loading, a substantial amount of RF power is dissipated in 50Ω termination loads. For the Super Proton Synchrotron (SPS) at Cern this is 69 % of the incident RF power or about 1 MW. Different ideas, making use of that otherwise dissipated power, are presented and their feasibility is reviewed. The most feasible one, utilizing an array of semiconductor based RF/DC modules, is used to create a design concept for energy recovery in the SPS. The modules are required to operate at high power, high efficiency and with low harmonic radiation. Besides the actual RF rectifier, they contain additional components to ensure a graceful degradation of the overall system. Different rectifier architectures and semiconductor devices are compared and the most suitable ones are chosen. Two prototype devices were built and operated with up to 400 W of pulsed RF power. Broadband measurements – capturing all harmonics up ...

  8. Experimental approach to high power long duration neutral beams

    Horiike, Hiroshi

    1981-12-01

    Experimental studies of ion sources and beam dumps for the development of a high power long duration neutral beam injector for JT-60 are presented. Long pulse operation of high power beams requires a high degree of reliability. To develop a reliable ion source with large extraction area, a new duoPIGatron ion source with a coaxially shaped intermediate electrode is proposed and tested. Magnetic configuration is examined numerically to obtain high current arc discharge and source plasma with small density variation. Experimental results show that primary electrons were fed widely from the cathode plasma region to the source plasma region and that dense uniform source plasma could be obtained easily. Source plasma characteristics are studied and comparison of these with other sources are also described. To develop extraction electrode of high power ion source, experimental studies were made on the cooling of the electrode. Long Pulse beams were extracted safely under the condition of high heat loading on the electrode. Finally, burnout study for the development of high power beam dumps is presented. Burnout data were obtained from subcooled forced-convective boiling of water in a copper finned tube irradiated by high power ion beams. The results yield simple burnout correlations which can be used for the prediction of burnout heat flux of the beam dump. (author)

  9. High-powered CO2 -lasers and noise control

    Honkasalo, Antero; Kuronen, Juhani

    High-power CO2 -lasers are being more and more widely used for welding, drilling and cutting in machine shops. In the near future, different kinds of surface treatments will also become routine practice with laser units. The industries benefitting most from high power lasers will be: the automotive industry, shipbuilding, the offshore industry, the aerospace industry, the nuclear and the chemical processing industries. Metal processing lasers are interesting from the point of view of noise control because the working tool is a laser beam. It is reasonable to suppose that the use of such laser beams will lead to lower noise levels than those connected with traditional metal processing methods and equipment. In the following presentation, the noise levels and possible noise-control problems attached to the use of high-powered CO2 -lasers are studied.

  10. High power pulsed sources based on fiber amplifiers

    Canat, Guillaume; Jaouën, Yves; Mollier, Jean-Claude; Bouzinac, Jean-Pierre; Cariou, Jean-Pierre

    2017-11-01

    Cladding-pumped rare-earth-doped fiber laser technologies are currently among the best sources for high power applications. Theses extremely compact and robust sources appoint them as good candidate for aeronautical and space applications. The double-clad (DC) fiber converts the poor beamquality of high-power large-area pump diodes from the 1st cladding to laser light at another wavelength guided in an active single-mode core. High-power coherent MOPA (Master Oscillator Power Amplifier) sources (several 10W CW or several 100W in pulsed regime) will soon be achieved. Unfortunately it also brings nonlinear effects which quickly impairs output signal distortions. Stimulated Brillouin scattering (SBS) and optical parametric amplification (OPA) have been shown to be strong limitations. Based on amplifier modeling and experiments we discuss the performances of these sources.

  11. Research results for the applications of high power ion beams

    Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Zhang Jiasheng; Xu Ri; Peng Jianchang; Ren Shuqing; Li Peng; Yang Li; Huang Jianjun; Zhang Guoguang; Ouyang Xiaoping; Li Hongyu

    2003-01-01

    The results obtained in the theoretical and experimental studies for the application of high power ion beams in certain areas of nuclear physics and material science are reported. The preliminary experimental results of generating 6-7 MeV quasi-monoenergetic pulsed γ-rays with high power pulsed proton beams striking 19 F target on the Flash II accelerator are presented. By placing the target far enough downstream, the quasi-monoenergetic pulsed γ-rays can be discriminated experimentally from the diode Bremsstrahlung. This article also describes the other applications of high power ion beams and the preliminary experimental and theoretical results in simulation of soft X-ray thermal-mechanical effects, generation of high intense pulsed neutrons, equation of state and shock-wave physics experiments, surface modification and so on

  12. Stretchers and compressors for ultra-high power laser systems

    Yakovlev, I V [Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)

    2014-05-30

    This review is concerned with pulse stretchers and compressors as key components of ultra-high power laser facilities that take advantage of chirped-pulse amplification. The potentialities, characteristics, configurations and methods for the matching and alignment of these devices are examined, with particular attention to the history of the optics of ultra-short, ultra-intense pulses before and after 1985, when the chirped-pulse amplification method was proposed, which drastically changed the view of the feasibility of creating ultra-high power laser sources. The review is intended primarily for young scientists and experts who begin to address the amplification and compression of chirped pulses, experts in laser optics and all who are interested in scientific achievements in the field of ultra-high power laser systems. (review)

  13. Optical design of high power excimer laser system

    Zhang Yongsheng; Zhao Jun; Ma Lianying; Yi Aiping; Liu Jingru

    2011-01-01

    Image relay and angular multiplexing,which should be considered together in the design of high power excimer laser system, is reviewed. It's important to select proper illumination setup and laser beam shaping techniques. Given the complex and special angular multiplexing scheme in high power excimer laser systems, some detailed conceptual layout schemes are given in the paper. After a brief description of lens array and reflective telescope objective, which combine the incoming beams to a common focus, a new schematic layout which uses the final targeting optics and one optical delay line array, to realize multiplexing and de-multiplexing simultaneously is first proposed in the paper. (authors)

  14. Modeling high-power RF accelerator cavities with SPICE

    Humphries, S. Jr.

    1992-01-01

    The dynamical interactions between RF accelerator cavities and high-power beams can be treated on personal computers using a lumped circuit element model and the SPICE circuit analysis code. Applications include studies of wake potentials, two-beam accelerators, microwave sources, and transverse mode damping. This report describes the construction of analogs for TM mn0 modes and the creation of SPICE input for cylindrical cavities. The models were used to study continuous generation of kA electron beam pulses from a vacuum cavity driven by a high-power RF source

  15. Nanosecond high-power dense microplasma switch for visible light

    Bataller, A., E-mail: bataller@physics.ucla.edu; Koulakis, J.; Pree, S.; Putterman, S. [Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, California 90095 (United States)

    2014-12-01

    Spark discharges in high-pressure gas are known to emit a broadband spectrum during the first 10 s of nanoseconds. We present calibrated spectra of high-pressure discharges in xenon and show that the resulting plasma is optically thick. Laser transmission data show that such a body is opaque to visible light, as expected from Kirchoff's law of thermal radiation. Nanosecond framing images of the spark absorbing high-power laser light are presented. The sparks are ideal candidates for nanosecond, high-power laser switches.

  16. Science opportunities at high power accelerators like APT

    Browne, J.C.

    1996-01-01

    This paper presents applications of high power RF proton linear accelerators to several fields. Radioisotope production is an area in which linacs have already provided new isotopes for use in medical and industrial applications. A new type of spallation neutron source, called a long-pulse spallation source (LPSS), is discussed for application to neutron scattering and to the production and use of ultra-cold neutrons (UCN). The concept of an accelerator-driven, transmutation of nuclear waste system, based on high power RF linac technology, is presented along with its impact on spent nuclear fuels

  17. High-power CO laser and its potential applications

    Sato, Shunichi; Takahashi, Kunimitsu; Shimamoto, Kojiro; Takashima, Yoichi; Matsuda, Keiichi; Kuribayashi, Shizuma; Noda, Osamu; Imatake, Shigenori; Kondo, Motoe.

    1995-01-01

    The R and D program for the development of a high-power CO laser and its application technologies is described. Based on a self-sustained discharge excitation scheme, the available laser output has been successfully scaled to over 20 kW. The CO laser cutting experiments for thick metals have been performed in association with the decommissioning technologies development. Other potential applications, which include those based on photo chemical process, are reviewed. Recently demonstrated high-power tunable operation and room-temperature operation are also reported. (author)

  18. Proceedings of wide band gap semiconductors

    Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

    1992-01-01

    This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

  19. Compound Semiconductor Radiation Detector

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  20. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  1. Measurement of high-power microwave pulse under intense ...

    Abstract. KALI-1000 pulse power system has been used to generate single pulse nanosecond duration high-power microwaves (HPM) from a virtual cathode oscillator. (VIRCATOR) device. HPM power measurements were carried out using a transmitting– receiving system in the presence of intense high frequency (a few ...

  2. High Powered Rocketry: Design, Construction, and Launching Experience and Analysis

    Paulson, Pryce; Curtis, Jarret; Bartel, Evan; Cyr, Waycen Owens; Lamsal, Chiranjivi

    2018-01-01

    In this study, the nuts and bolts of designing and building a high powered rocket have been presented. A computer simulation program called RockSim was used to design the rocket. Simulation results are consistent with time variations of altitude, velocity, and acceleration obtained in the actual flight. The actual drag coefficient was determined…

  3. High Power laser power conditioning system new discharge circuit research

    Li Yi; Peng Han Sheng; Zhou Pei Zhang; Zheng Wan Guo; Guo Lang Fu; Chen Li Hua; Chen De Hui; Lai Gui You; Luan Yong Ping

    2002-01-01

    The new discharge circuit of power conditioning system for high power laser is studied. The theoretical model of the main discharge circuit is established. The pre-ionization circuit is studied in experiment. In addition, the explosion energy of the new large xenon lamp is successfully measured. The conclusion has been applied to 4 x 2 amplifier system

  4. A high-power laser system for thermonuclear fusion experiments

    Azizov, Eh.A.; Ignat'ev, L.P.; Koval'skij, N.G.; Kolesnikov, Yu.A.; Mamzer, A.F.; Pergament, M.I.; Rudnitskij, Yu.P.; Smirnov, G.V.; Yagnov, V.A.; Nikolaevskij, V.G.

    1976-01-01

    A high-power laser system has been designed for an energy output of approximately 3X10 4 J. Neodymium glass was selected based on the level of technical progress, operating experience and the availability of components. The operating performance that has been achieved to date is described. (author)

  5. High Efficiency Power Converter for Low Voltage High Power Applications

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...

  6. Fundamentals and industrial applications of high power laser beam cladding

    Bruck, G.J.

    1988-01-01

    Laser beam cladding has been refined such that clad characteristics are precisely determined through routine process control. This paper reviews the state of the art of laser cladding optical equipment, as well as the fundamental process/clad relationships that have been developed for high power processing. Major categories of industrial laser cladding are described with examples chose to highlight particular process attributes

  7. Active Snubber Circuit for High Power Inverter Leg

    Rasmussen, Tonny Wederberg; Johansen, Morten Holst

    2009-01-01

    Abstract— High power converters in the conventional 6 pulse configuration with 6 switching elements IGBTs (Insulated Gate Bipolar Transistor) are pushed to the limit of power. Especially the switching loss is high. This reduces the switching frequency due to cooling problems. Passive snubber circ...

  8. Modelling aluminium wire bond reliability in high power OMP devices

    Kregting, R.; Yuan, C.A.; Xiao, A.; Bruijn, F. de

    2011-01-01

    In a RF power application such as the OMP, the wires are subjected to high current (because of the high power) and high temperature (because of the heat from IC and joule-heating from the wire itself). Moreover, the wire shape is essential to the RF performance. Hence, the aluminium wire is

  9. High to ultra-high power electrical energy storage.

    Sherrill, Stefanie A; Banerjee, Parag; Rubloff, Gary W; Lee, Sang Bok

    2011-12-14

    High power electrical energy storage systems are becoming critical devices for advanced energy storage technology. This is true in part due to their high rate capabilities and moderate energy densities which allow them to capture power efficiently from evanescent, renewable energy sources. High power systems include both electrochemical capacitors and electrostatic capacitors. These devices have fast charging and discharging rates, supplying energy within seconds or less. Recent research has focused on increasing power and energy density of the devices using advanced materials and novel architectural design. An increase in understanding of structure-property relationships in nanomaterials and interfaces and the ability to control nanostructures precisely has led to an immense improvement in the performance characteristics of these devices. In this review, we discuss the recent advances for both electrochemical and electrostatic capacitors as high power electrical energy storage systems, and propose directions and challenges for the future. We asses the opportunities in nanostructure-based high power electrical energy storage devices and include electrochemical and electrostatic capacitors for their potential to open the door to a new regime of power energy.

  10. Functionally graded materials produced with high power lasers

    De Hosson, J. T. M.; Ocelik, V.; Chandra, T; Torralba, JM; Sakai, T

    2003-01-01

    In this keynote paper two examples will be present of functionally graded materials produced with high power Nd:YAG lasers. In particular the conditions for a successful Laser Melt Injection (LMI) of SiC and WC particles into the melt pool of A18Si and Ti6Al4V alloys are presented. The formation of

  11. High Power Factor Hybrid Rectifier | Odeh | Nigerian Journal of ...

    This paper presents the analysis of a new single-phase hybrid rectifier with high power factor (PF) and low harmonic distortion current. The proposed rectifier structure is composed of an ordinary single-phase diode rectifier with parallel connection of a switched converter. It is outlined that the switched converter is capable of ...

  12. Los Alamos high-power proton linac designs

    Lawrence, G.P. [Los Alamos National Laboratory, NM (United States)

    1995-10-01

    Medium-energy high-power proton linear accelerators have been studied at Los Alamos as drivers for spallation neutron applications requiring large amounts of beam power. Reference designs for such accelerators are discussed, important design factors are reviewed, and issues and concern specific to this unprecedented power regime are discussed.

  13. Semiconductor Physical Electronics

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  14. Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

    Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

    2018-02-01

    The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications 96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

  15. Radiation effects in technologies of semiconductor materials and devises

    Korshunov, F.P.; Bogatyrev, Yu.V.; Lastovskij, S.B.; Marchenko, I.G.; Zhdanovich, N.E.

    2003-01-01

    In the paper were considered the physical basics and practical results of using of penetrating radiations in technologies of nuclear transmutation of semiconductor materials (Si, GaAs) as well as in production of semiconductor devices including high-power silicon diodes, thyristors and transistors. It is shown the high efficiency of radiation technology for increasing of electronic device speed, exclusion of technological operations such as gold or platinum diffusions, increase of quality, decrease of prime cost and increase of good-to-bad device ratio yield

  16. Contacts to semiconductors

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  17. Semiconductor Electrical Measurements Laboratory

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  18. High-Power Ka-Band Window and Resonant Ring

    Jay L. Hirshfield

    2006-01-01

    A stand-alone 200 MW rf test station is needed for carrying out development of accelerator structures and components for a future high-gradient multi-TeV collider, such as CLIC. A high-power rf window is needed to isolate the test station from a structure element under test. This project aimed to develop such a window for use at a frequency in the range 30-35 GHz, and to also develop a high-power resonant ring for testing the window. During Phase I, successful conceptual designs were completed for the window and the resonant ring, and cold tests of each were carried out that confirmed the designs

  19. Designing high power targets with computational fluid dynamics (CFD)

    Covrig, S. D.

    2013-01-01

    High power liquid hydrogen (LH2) targets, up to 850 W, have been widely used at Jefferson Lab for the 6 GeV physics program. The typical luminosity loss of a 20 cm long LH2 target was 20% for a beam current of 100 μA rastered on a square of side 2 mm on the target. The 35 cm long, 2500 W LH2 target for the Qweak experiment had a luminosity loss of 0.8% at 180 μA beam rastered on a square of side 4 mm at the target. The Qweak target was the highest power liquid hydrogen target in the world and with the lowest noise figure. The Qweak target was the first one designed with CFD at Jefferson Lab. A CFD facility is being established at Jefferson Lab to design, build and test a new generation of low noise high power targets

  20. Designing high power targets with computational fluid dynamics (CFD)

    Covrig, S. D. [Thomas Jefferson National Laboratory, Newport News, VA 23606 (United States)

    2013-11-07

    High power liquid hydrogen (LH2) targets, up to 850 W, have been widely used at Jefferson Lab for the 6 GeV physics program. The typical luminosity loss of a 20 cm long LH2 target was 20% for a beam current of 100 μA rastered on a square of side 2 mm on the target. The 35 cm long, 2500 W LH2 target for the Qweak experiment had a luminosity loss of 0.8% at 180 μA beam rastered on a square of side 4 mm at the target. The Qweak target was the highest power liquid hydrogen target in the world and with the lowest noise figure. The Qweak target was the first one designed with CFD at Jefferson Lab. A CFD facility is being established at Jefferson Lab to design, build and test a new generation of low noise high power targets.

  1. Modeling, fabrication and high power optical characterization of plasmonic waveguides

    Lavrinenko, Andrei; Lysenko, Oleg

    2015-01-01

    This paper describes modeling, fabrication and high power optical characterization of thin gold films embedded in silicon dioxide. The propagation vector of surface plasmon polaritons has been calculated by the effective index method for the wavelength range of 750-1700 nm and film thickness of 15......, 30 and 45 nm. The fabrication process of such plasmonic waveguides with width in the range of 1-100 μm and their quality inspection are described. The results of optical characterization of plasmonic waveguides using a high power laser with the peak power wavelength 1064 nm show significant deviation...... from the linear propagation regime of surface plasmon polaritons at the average input power of 100 mW and above. Possible reasons for this deviation are heating of the waveguides and subsequent changes in the coupling and propagation losses....

  2. CAS Accelerator Physics (High-Power Hadron Machines) in Spain

    CAS

    2011-01-01

    The CERN Accelerator School (CAS) and ESS-Bilbao jointly organised a specialised course on High-Power Hadron Machines, held at the Hotel Barceló Nervión in Bilbao, Spain, from 24 May to 2 June, 2011.   CERN Accelerator School students. After recapitulation lectures on the essentials of accelerator physics and review lectures on the different types of accelerators, the programme focussed on the challenges of designing and operating high-power facilities. The particular problems for RF systems, beam instrumentation, vacuum, cryogenics, collimators and beam dumps were examined. Activation of equipment, radioprotection and remote handling issues were also addressed. The school was very successful, with 69 participants of 22 nationalities. Feedback from the participants was extremely positive, praising the expertise and enthusiasm of the lecturers, as well as the high standard and excellent quality of their lectures. In addition to the academic programme, the participants w...

  3. Hollow-core fibers for high power pulse delivery

    Michieletto, Mattia; Lyngsø, Jens K.; Jakobsen, Christian

    2016-01-01

    We investigate hollow-core fibers for fiber delivery of high power ultrashort laser pulses. We use numerical techniques to design an anti-resonant hollow-core fiber having one layer of non-touching tubes to determine which structures offer the best optical properties for the delivery of high power...... picosecond pulses. A novel fiber with 7 tubes and a core of 30 mu m was fabricated and it is here described and characterized, showing remarkable low loss, low bend loss, and good mode quality. Its optical properties are compared to both a 10 mu m and a 18 mu m core diameter photonic band gap hollow......-core fiber. The three fibers are characterized experimentally for the delivery of 22 picosecond pulses at 1032nm. We demonstrate flexible, diffraction limited beam delivery with output average powers in excess of 70W. (C) 2016 Optical Society of America...

  4. Embedded control system for high power RF amplifiers

    Sharma, Deepak Kumar; Gupta, Alok Kumar; Jain, Akhilesh; Hannurkar, P.R.

    2011-01-01

    RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

  5. High-power microwave diplexers for advanced ECRH systems

    Kasparek, W.; Petelin, M.; Erckmann, V.; Bruschi, A.; Noke, F.; Purps, F.; Hollmann, F.; Koshurinov, Y.; Lubyako, L.; Plaum, B.; Wubie, W.

    2009-01-01

    In electron cyclotron resonance heating systems, high-power multiplexers can be employed as power combiners, adjustable power dividers, fast switches to toggle the power between two launchers, as well as frequency sensitive directional couplers to combine heating and diagnostic applications on one launcher. In the paper, various diplexer designs for quasi-optical and corrugated waveguide transmission systems are discussed. Numerical calculations, low-power tests and especially high-power experiments performed at the ECRH system of W7-X are shown, which demonstrate the capability of these devices. Near term plans for applications on ASDEX Upgrade and FTU are presented. Based on the present results, options for implementation of power combiners and fast switches in the ECRH system of ITER is discussed.

  6. High-Power ZBLAN Glass Fiber Lasers: Review and Prospect

    Xiushan Zhu

    2010-01-01

    Full Text Available ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF, considered as the most stable heavy metal fluoride glass and the excellent host for rare-earth ions, has been extensively used for efficient and compact ultraviolet, visible, and infrared fiber lasers due to its low intrinsic loss, wide transparency window, and small phonon energy. In this paper, the historical progress and the properties of fluoride glasses and the fabrication of ZBLAN fibers are briefly described. Advances of infrared, upconversion, and supercontinuum ZBLAN fiber lasers are addressed in detail. Finally, constraints on the power scaling of ZBLAN fiber lasers are analyzed and discussed. ZBLAN fiber lasers are showing promise of generating high-power emissions covering from ultraviolet to mid-infrared considering the recent advances in newly designed optical fibers, beam-shaped high-power pump diodes, beam combining techniques, and heat-dissipating technology.

  7. Gate Drive For High Speed, High Power IGBTs

    Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C.; /SLAC

    2007-06-18

    A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3{micro}S with a rate of current rise of more than 10000A/{micro}S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.

  8. Gate Drive For High Speed, High Power IGBTs

    Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C.; SLAC

    2007-01-01

    A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3(micro)S with a rate of current rise of more than 10000A/(micro)S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt

  9. Transient Plasma Photonic Crystals for High-Power Lasers.

    Lehmann, G; Spatschek, K H

    2016-06-03

    A new type of transient photonic crystals for high-power lasers is presented. The crystal is produced by counterpropagating laser beams in plasma. Trapped electrons and electrically forced ions generate a strong density grating. The lifetime of the transient photonic crystal is determined by the ballistic motion of ions. The robustness of the photonic crystal allows one to manipulate high-intensity laser pulses. The scheme of the crystal is analyzed here by 1D Vlasov simulations. Reflection or transmission of high-power laser pulses are predicted by particle-in-cell simulations. It is shown that a transient plasma photonic crystal may act as a tunable mirror for intense laser pulses. Generalizations to 2D and 3D configurations are possible.

  10. High Power Density Power Electronic Converters for Large Wind Turbines

    Senturk, Osman Selcuk

    . For these VSCs, high power density is required due to limited turbine nacelle space. Also, high reliability is required since maintenance cost of these remotely located wind turbines is quite high and these turbines operate under harsh operating conditions. In order to select a high power density and reliability......In large wind turbines (in MW and multi-MW ranges), which are extensively utilized in wind power plants, full-scale medium voltage (MV) multi-level (ML) voltage source converters (VSCs) are being more preferably employed nowadays for interfacing these wind turbines with electricity grids...... VSC solution for wind turbines, first, the VSC topology and the switch technology to be employed should be specified such that the highest possible power density and reliability are to be attained. Then, this qualitative approach should be complemented with the power density and reliability...

  11. High power electron accelerators for flue gas treatment

    Zimek, Z.

    2011-01-01

    Flue gas treatment process based on electron beam application for SO 2 and NO x removal was successfully demonstrated in number of laboratories, pilot plants and industrial demonstration facilities. The industrial scale application of an electron beam process for flue gas treatment requires accelerators modules with a beam power 100-500 kW and electron energy range 0.8-1.5 MeV. The most important accelerator parameters for successful flue gas radiation technology implementation are related to accelerator reliability/availability, electrical efficiency and accelerator price. Experience gained in high power accelerators exploitation in flue gas treatment industrial demonstration facility was described and high power accelerator constructions have been reviewed. (author)

  12. Pulsed discharges produced by high-power surface waves

    Böhle, A.; Ivanov, O.; Kolisko, A.; Kortshagen, U.; Schlüter, H.; Vikharev, A.

    1996-02-01

    The mechanisms of the ionization front advance in surface-wave-produced discharges are investigated using two experimental set-ups. The high-power surface waves are excited in a 3 cm wavelength band by a surfaguide and a novel type of launcher (an E-plane junction). The ionization front velocity of the surface wave is measured for a wide range of gas pressures, incident microwave power and initial pre-ionization. The experimental results are compared with theoretical ones based on three different models. The comparison between theory and experiment allows one to suggest a new interpretation of the ionization front's advance. The ionization front velocity is determined by a breakdown wave or an ionization wave in the electric field of a high-power surface wave in the zone near the ionization front.

  13. High power electron accelerators for flue gas treatment

    Zimek, Z. [Institute of Nuclear Chemistry and Technology, Warsaw (Poland)

    2011-07-01

    Flue gas treatment process based on electron beam application for SO{sub 2} and NO{sub x} removal was successfully demonstrated in number of laboratories, pilot plants and industrial demonstration facilities. The industrial scale application of an electron beam process for flue gas treatment requires accelerators modules with a beam power 100-500 kW and electron energy range 0.8-1.5 MeV. The most important accelerator parameters for successful flue gas radiation technology implementation are related to accelerator reliability/availability, electrical efficiency and accelerator price. Experience gained in high power accelerators exploitation in flue gas treatment industrial demonstration facility was described and high power accelerator constructions have been reviewed. (author)

  14. High-Power Electron Accelerators for Space (and other) Applications

    Nguyen, Dinh Cong [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Lewellen, John W. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-05-23

    This is a presentation on high-power electron accelerators for space and other applications. The main points covered are: electron beams for space applications, new designs of RF accelerators, high-power high-electron mobility transistors (HEMT) testing, and Li-ion battery design. In summary, the authors have considered a concept of 1-MeV electron accelerator that can operate up to several seconds. This concept can be extended to higher energy to produce higher beam power. Going to higher beam energy requires adding more cavities and solid-state HEMT RF power devices. The commercial HEMT have been tested for frequency response and RF output power (up to 420 W). Finally, the authors are testing these HEMT into a resonant load and planning for an electron beam test in FY17.

  15. High power rf component testing for the NLC

    Vlieks, A.E.; Fowkes, W.R.; Loewen, R.J.; Tantawi, S.G.

    1998-09-01

    In the Next Linear Collider (NLC), the high power rf components must be capable of handling peak rf power levels in excess of 600 MW. In the current view of the NLC, even the rectangular waveguide components must transmit at least 300 MW rf power. At this power level, peak rf fields can greatly exceed 100 MV/m. The authors present recent results of high power tests performed at the Accelerator Structure Test Area (ASTA) at SLAC. These tests are designed to investigate the rf breakdown limits of several new components potentially useful for the NLC. In particular, the authors tested a new TE 01 --TE 10 circular to rectangular wrap-around mode converter, a modified (internal fin) Magic Tee hybrid, and an upgraded flower petal mode converter

  16. Design and Characterization of High Power Targets for RIB Generation

    Zhang, Y.

    2001-01-01

    In this article, thermal modeling techniques are used to simulate ISOL targets irradiated with high power proton beams. Beam scattering effects, nuclear reactions and beam power deposition distributions in the target were computed with the Monte Carlo simulation code, GEANT4. The power density information was subsequently used as input to the finite element thermal analysis code, ANSYS, for extracting temperature distribution information for a variety of target materials. The principal objective of the studies was to evaluate techniques for more uniformly distributing beam deposited heat over the volumes of targets to levels compatible with their irradiation with the highest practical primary-beam power, and to use the preferred technique to design high power ISOL targets. The results suggest that radiation cooling, in combination, with primary beam manipulation, can be used to control temperatures in practically sized targets, to levels commensurate with irradiation with 1 GeV, 100 kW proton beams

  17. Active Photonic crystal fibers for high power applications

    Olausson, Christina Bjarnal Thulin

    The photonic crystal ber technology provides means to realize bers optimized for high power operation, due to the large single-mode cores and the unique design exibility of the microstructure. The work presented in this thesis focuses on improving the properties of active photonic crystal bers...... contributed to the compounding of new and improved material compositions. The second part is an investigation of pump absorption in photonic crystal bers, demonstrating that the microstructure in photonic crystal bers improves the pump absorption by up to a factor of two compared to step-index bers....... This plays an important role in high power lasers and ampliers with respect to efficiency, packaging, and thermal handling. The third part of the work has involved developing tools for characterizing the mode quality and stability of large core bers. Stable, single-mode bers with larger cores are essential...

  18. High-Power Microwave Transmission and Mode Conversion Program

    Vernon, Ronald J. [Univ. of Wisconsin, Madison, WI (United States)

    2015-08-14

    This is a final technical report for a long term project to develop improved designs and design tools for the microwave hardware and components associated with the DOE Plasma Fusion Program. We have developed basic theory, software, fabrication techniques, and low-power measurement techniques for the design of microwave hardware associated gyrotrons, microwave mode converters and high-power microwave transmission lines. Specifically, in this report we discuss our work on designing quasi-optical mode converters for single and multiple frequencies, a new method for the analysis of perturbed-wall waveguide mode converters, perturbed-wall launcher design for TE0n mode gyrotrons, quasi-optical traveling-wave resonator design for high-power testing of microwave components, and possible improvements to the HSX microwave transmission line.

  19. High power industrial picosecond laser from IR to UV

    Saby, Julien; Sangla, Damien; Pierrot, Simonette; Deslandes, Pierre; Salin, François

    2013-02-01

    Many industrial applications such as glass cutting, ceramic micro-machining or photovoltaic processes require high average and high peak power Picosecond pulses. The main limitation for the expansion of the picosecond market is the cost of high power picosecond laser sources, which is due to the complexity of the architecture used for picosecond pulse amplification, and the difficulty to keep an excellent beam quality at high average power. Amplification with fibers is a good technology to achieve high power in picosecond regime but, because of its tight confinement over long distances, light undergoes dramatic non linearities while propagating in fibers. One way to avoid strong non linearities is to increase fiber's mode area. Nineteen missing holes fibers offering core diameter larger than 80μm have been used over the past few years [1-3] but it has been shown that mode instabilities occur at approximately 100W average output power in these fibers [4]. Recently a new fiber design has been introduced, in which HOMs are delocalized from the core to the clad, preventing from HOMs amplification [5]. In these so-called Large Pitch Fibers, threshold for mode instabilities is increased to 294W offering robust single-mode operation below this power level [6]. We have demonstrated a high power-high efficiency industrial picosecond source using single-mode Large Pitch rod-type fibers doped with Ytterbium. Large Pitch Rod type fibers can offer a unique combination of single-mode output with a very large mode area from 40 μm up to 100μm and very high gain. This enables to directly amplify a low power-low energy Mode Locked Fiber laser with a simple amplification architecture, achieving very high power together with singlemode output independent of power level or repetition rate.

  20. A plasma microlens for ultrashort high power lasers

    Katzir, Yiftach; Eisenmann, Shmuel; Ferber, Yair; Zigler, Arie; Hubbard, Richard F.

    2009-07-01

    We present a technique for generation of miniature plasma lens system that can be used for focusing and collimating a high intensity femtosecond laser pulse. The plasma lens was created by a nanosecond laser, which ablated a capillary entrance. The spatial configuration of the ablated plasma focused a high intensity femtosecond laser pulse. This configuration offers versatility in the plasma lens small f-number for extremely tight focusing of high power lasers with no damage threshold restrictions of regular optical components.

  1. A plasma microlens for ultrashort high power lasers

    Katzir, Yiftach; Eisenmann, Shmuel; Ferber, Yair; Zigler, Arie; Hubbard, Richard F.

    2009-01-01

    We present a technique for generation of miniature plasma lens system that can be used for focusing and collimating a high intensity femtosecond laser pulse. The plasma lens was created by a nanosecond laser, which ablated a capillary entrance. The spatial configuration of the ablated plasma focused a high intensity femtosecond laser pulse. This configuration offers versatility in the plasma lens small f-number for extremely tight focusing of high power lasers with no damage threshold restrictions of regular optical components.

  2. A condenser for very high power steam turbines

    Gardey, Robert.

    1973-01-01

    The invention relates to a condenser for very high power steam turbines under the masonry-block supporting the low-pressure stages of the turbine, that condenser comprises two horizontal aligned water-tube bundles passing through the steam-exhaust sleeves of the low-pressure stages, on both sides of a common inlet water box. The invention can be applied in particular to the 1000-2000 MW turbines of light water nuclear power stations [fr

  3. Recent results in mirror based high power laser cutting

    Olsen, Flemming Ove; Nielsen, Jakob Skov; Elvang, Mads

    2004-01-01

    In this paper, recent results in high power laser cutting, obtained in reseach and development projects are presented. Two types of mirror based focussing systems for laser cutting have been developed and applied in laser cutting studies on CO2-lasers up to 12 kW. In shipyard environment cutting...... speed increase relative to state-of-the-art cutting of over 100 % has been achieved....

  4. Development of a high-power 432 MHz DTL

    Naito, F.; Kato, T.; Takasaki, E.; Yamazaki, Y.; Kawasumi, T.; Suzuki, K.; Iino, Y.

    1992-01-01

    A high-power model of a 432 MHz Drift-Tube Linac is under construction. It will accelerate H - ions from 3 to 5.4 MeV, and is a prototype of the DTL for the Japanese Hadron Project. Several new techniques have been developed for constructing the DTL: fabricating and assembling methods of permanent quadrupole magnet and a drift tube, alignment of the drift tube, and a method of connecting the tanks. (Author) 6 refs., 5 figs

  5. A high-power compact regenerative amplifier FEL

    Nguyen, D.C.; Sheffield, R.L.; Fortgang, C.M.; Kinross-Wright, J.M.; Ebrahim, N.A.; Goldstein, J.C.

    1997-01-01

    The Regenerative Amplifier FEL (RAFEL) is a new FEL approach aimed at achieving the highest optical power from a compact rf-linac FEL. The key idea is to feed back a small fraction ( 5 in single pass) wiggler to enable the FEL to reach saturation in a few passes. This paper summarizes the design of a high-power compact regenerative amplifier FEL and describes the first experimental demonstration of the RAFEL concept

  6. Preliminary research results for the generation and diagnostics of high power ion beams on FLASH II accelerator

    Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Li Jingya; Ren Shuqing; Ouyang Xiaoping; Zhang Guoguang; Li Hongyu

    2004-01-01

    The preliminary experimental results of the generation and diagnostics of high-power ion beams on FLASH II accelerator are reported. The high-power ion beams presently are being produced in a pinched diode. The method for enhancing the ratio of ion to electron current is to increase the electron residing time by pinching the electron flow. Furthermore, electron beam pinching can be combined with electron reflexing to achieve ion beams with even higher efficiency and intensity. The anode plasma is generated by anode foil bombarded with electron and anode foil surface flashover. In recent experiments on FLASH II accelerator, ion beams have been produced with a current of 160 kA and an energy of 500 keV corresponding to an ion beam peak power of about 80 GW. The ion number and current of high power ion beams were determined by monitoring delayed radioactivity from nuclear reactions induced in a 12 C target by the proton beams. The prompt γ-rays and diode Bremsstrahlung X-rays were measured with a PIN semi-conductor detector and a plastic scintillator detector. The current density distribution of ion beam was measured with a biased ion collector array. The ion beams were also recorded with a CR-39 detector. (authors)

  7. High Power Microwave Tubes: Basics and Trends, Volume 2

    Kesari, Vishal; Basu, B. N.

    2018-01-01

    Volume 2 of the book begins with chapter 6, in which we have taken up conventional MWTs (such as TWTs, klystrons, including multi-cavity and multi-beam klystrons, klystron variants including reflex klystron, IOT, EIK, EIO and twystron, and crossed-field tubes, namely, magnetron, CFA and carcinotron). In chapter 7, we have taken up fast-wave tubes (such as gyrotron, gyro-BWO, gyro-klystron, gyro-TWT, CARM, SWCA, hybrid gyro-tubes and peniotron). In chapter 8, we discuss vacuum microelectronic tubes (such as klystrino module, THz gyrotron and clinotron BWO); plasma-assisted tubes (such as PWT, plasma-filled TWT, BWO, including PASOTRON, and gyrotron); and HPM (high power microwave) tubes (such as relativistic TWT, relativistic BWO, RELTRON (variant of relativistic klystron), relativistic magnetron, high power Cerenkov tubes including SWO, RDG or orotron, MWCG and MWDG, bremsstrahlung radiation type tube, namely, vircator, and M-type tube MILO). In Chapter 9, we provide handy information about the frequency and power ranges of common MWTs, although more such information is provided at relevant places in the rest of the book as and where necessary. Chapter 10 is an epilogue that sums up the authors' attempt to bring out the various aspects of the basics of and trends in high power MWTs.

  8. Department of Defense high power laser program guidance

    Muller, Clifford H.

    1994-06-01

    The DoD investment of nominally $200 million per year is focused on four high power laser (HPL) concepts: Space-Based Laser (SBL), a Ballistic Missile Defense Organization effort that addresses boost-phase intercept for Theater Missile Defense and National Missile Defense; Airborne Laser (ABL), an Air Force effort that addresses boost-phase intercept for Theater Missile Defense; Ground-Based Laser (GBL), an Air Force effort addressing space control; and Anti-Ship Missile Defense (ASMD), a Navy effort addressing ship-based defense. Each organization is also supporting technology development with the goal of achieving less expensive, brighter, and lighter high power laser systems. These activities represent the building blocks of the DoD program to exploit the compelling characteristics of the high power laser. Even though DoD's HPL program are focused and moderately strong, additional emphasis in a few technical areas could help reduce risk in these programs. In addition, a number of options are available for continuing to use the High-Energy Laser System Test Facility (HELSTF) at White Sands Missile Range. This report provides a brief overview and guidance for the five efforts which comprise the DoD HPL program (SBL, ABL, GBL, ASMD, HELSTF).

  9. High Energy Density Sciences with High Power Lasers at SACLA

    Kodama, Ryosuke

    2013-10-01

    One of the interesting topics on high energy density sciences with high power lasers is creation of extremely high pressures in material. The pressures of more than 0.1 TPa are the energy density corresponding to the chemical bonding energy, resulting in expectation of dramatic changes in the chemical reactions. At pressures of more than TPa, most of material would be melted on the shock Hugoniot curve. However, if the temperature is less than 1eV or lower than a melting point at pressures of more than TPa, novel solid states of matter must be created through a pressured phase transition. One of the interesting materials must be carbon. At pressures of more than TPa, the diamond structure changes to BC and cubic at more than 3TPa. To create such novel states of matter, several kinds of isentropic-like compression techniques are being developed with high power lasers. To explore the ``Tera-Pascal Science,'' now we have a new tool which is an x-ray free electron laser as well as high power lasers. The XFEL will clear the details of the HED states and also efficiently create hot dense matter. We have started a new project on high energy density sciences using an XFEL (SACLA) in Japan, which is a HERMES (High Energy density Revolution of Matter in Extreme States) project.

  10. Semiconductors data handbook

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  11. Semiconductor radiation detection systems

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  12. Spin physics in semiconductors

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  13. Compound Semiconductor Radiation Detectors

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  14. Terahertz semiconductor nonlinear optics

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  15. Organic semiconductor crystals.

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  16. Long distance high power optical laser fiber break detection and continuity monitoring systems and methods

    Rinzler, Charles C.; Gray, William C.; Faircloth, Brian O.; Zediker, Mark S.

    2016-02-23

    A monitoring and detection system for use on high power laser systems, long distance high power laser systems and tools for performing high power laser operations. In particular, the monitoring and detection systems provide break detection and continuity protection for performing high power laser operations on, and in, remote and difficult to access locations.

  17. Development of high-power dye laser chain

    Konagai, Chikara; Kimura, Hironobu; Fukasawa, Teruichiro; Seki, Eiji; Abe, Motohisa; Mori, Hideo

    2000-01-01

    Copper vapor laser (CVL) pumped dye laser (DL) system, both in a master oscillator power amplifier (MOPA) configuration, has been developed for Atomic Vapor Isotope Separation program in Japan. Dye laser output power of about 500 W has been proved in long-term operations over 200 hours. High power fiber optic delivery system is utilized in order to efficiently transport kilowatt level CVL beams to the DL MOPA. Single model CVL pumped DL oscillator has been developed and worked for 200 hours within +/- 0.1 pm wavelength stability. Phase modulator for spreading spectrum to the linewidth of hyperfine structure has been developed and demonstrated.

  18. Major projects for the use of high power linacs

    Prome, M.

    1996-01-01

    A review of the major projects for high power linacs is given. The field covers the projects aiming at the transmutation of nuclear waste or the production of tritium, as well as the production of neutrons for hybrid reactors or basic research with neutron sources. The technologies which arc common to all the projects are discussed. Comments are made on the technical difficulties encountered by all the projects, and the special problems of the pulsed linacs are mentioned. Elements for a comparison of normal conducting linacs versus superconducting ones are given. Finally the technical developments being made in various laboratories are reviewed. (author)

  19. Techniques for preventing damage to high power laser components

    Stowers, I.F.; Patton, H.G.; Jones, W.A.; Wentworth, D.E.

    1977-09-01

    Techniques for preventing damage to components of the LASL Shiva high power laser system were briefly presented. Optical element damage in the disk amplifier from the combined fluence of the primary laser beam and the Xenon flash lamps that pump the cavity was discussed. Assembly and cleaning techniques were described which have improved optical element life by minimizing particulate and optically absorbing film contamination on assembled amplifier structures. A Class-100 vertical flaw clean room used for assembly and inspection of laser components was also described. The life of a disk amplifier was extended from less than 50 shots to 500 shots through application of these assembly and cleaning techniques

  20. ELBE Center for High-Power Radiation Sources

    Peter Dr. Michel

    2016-01-01

    Full Text Available In the ELBE Center for High-Power Radiation Sources, the superconducting linear electron accelerator ELBE, serving  two free electron lasers, sources for intense coherent THz radiation, mono-energetic positrons, electrons, γ-rays, a neutron time-of-flight system as well as two synchronized ultra-short pulsed Petawatt laser systems are collocated. The characteristics of these beams make the ELBE center a unique research instrument for a variety of external users in fields ranging from material science over nuclear physics to cancer research, as well as scientists of the Helmholtz-Zentrum Dresden-Rossendorf (HZDR.

  1. High power impulse magnetron sputtering and its applications

    Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

    2018-04-01

    High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

  2. Ion energy characteristics downstream of a high power helicon

    Prager, James; Winglee, Robert; Ziemba, Tim; Roberson, B Race; Quetin, Gregory

    2008-01-01

    The High Power Helicon eXperiment operates at higher powers (37 kW) and lower background neutral pressure than other helicon experiments. The ion velocity distribution function (IVDF) has been measured at multiple locations downstream of the helicon source and a mach 3-6 flowing plasma was observed. The helicon antenna has a direct effect in accelerating the plasma downstream of the source. Also, the IVDF is affected by the cloud of neutrals from the initial gas puff, which keeps the plasma speed low at early times near the source.

  3. Ion energy characteristics downstream of a high power helicon

    Prager, James; Winglee, Robert; Ziemba, Tim; Roberson, B Race; Quetin, Gregory [University of Washington, Johnson Hall 070, Box 351310, 4000 15th Avenue NE, Seattle, WA 98195-1310 (United States)], E-mail: jprager@u.washington.edu

    2008-05-01

    The High Power Helicon eXperiment operates at higher powers (37 kW) and lower background neutral pressure than other helicon experiments. The ion velocity distribution function (IVDF) has been measured at multiple locations downstream of the helicon source and a mach 3-6 flowing plasma was observed. The helicon antenna has a direct effect in accelerating the plasma downstream of the source. Also, the IVDF is affected by the cloud of neutrals from the initial gas puff, which keeps the plasma speed low at early times near the source.

  4. The Linac4 DTL Prototype: Low and High Power Measurements

    De Michele, G; Marques-Balula, J; Ramberger, S

    2012-01-01

    The prototype of the Linac4 Drift Tube Linac (DTL) has undergone low power measurements in order to verify the RF coupling and to adjust the post-coupler lengths based on bead-pull and spectrum measurements. Following the installation at the test stand, the cavity has been subjected to high power operation at Linac4 and SPL duty cycles. Saturation effects and multipacting have been observed and linked to X-ray emission. Voltage holding is reported in the presence of magnetic fields from permanent magnet quadrupoles (PMQ) installed in the first drift tubes.

  5. Organic nonlinear crystals and high power frequency conversion

    Velsko, S.P.; Davis, L.; Wang, F.; Monaco, S.; Eimerl, D.

    1987-12-01

    We are searching for a new second- and third-harmonic generators among the salts of chiral organic acids and bases. We discuss the relevant properties of crystals from this group of compounds, including their nonlinear and phasematching characteristics, linear absorption, damage threshold and crystal growth. In addition, we summarize what is known concerning other nonlinear optical properties of these crystals, such as two-photon absorption, nonlinear refractive index, and stimulated Raman thresholds. A preliminary assessment is made of the potential of these materials for use in future high power, large aperture lasers such as those used for inertial confinement fusion experiments. 14 refs., 1 fig., 3 tabs

  6. High-power ultrashort fiber laser for solar cells micromachining

    Lecourt, J.-B.; Duterte, C.; Liegeois, F.; Lekime, D.; Hernandez, Y.; Giannone, D.

    2012-02-01

    We report on a high-power ultra-short fiber laser for thin film solar cells micromachining. The laser is based on Chirped Pulse Amplification (CPA) scheme. The pulses are stretched to hundreds of picoseconds prior to amplification and can be compressed down to picosecond at high energy. The repetition rate is adjustable from 100 kHz to 1 MHz and the optical average output power is close to 13 W (before compression). The whole setup is fully fibred, except the compressor achieved with bulk gratings, resulting on a compact and reliable solution for cold ablation.

  7. Status of the Novosibirsk high-power terahertz FEL

    Gavrilov, N.G.; Knyazev, B.A.; Kolobanov, E.I.; Kotenkov, V.V.; Kubarev, V.V.; Kulipanov, G.N.; Matveenko, A.N.; Medvedev, L.E.; Miginsky, S.V.; Mironenko, L.A.; Oreshkov, A.D.; Ovchar, V.K.; Popik, V.M.; Salikova, T.V.; Scheglov, M.A.; Serednyakov, S.S.; Shevchenko, O.A.; Skrinsky, A.N.; Tcheskidov, V.G.; Vinokurov, N.A.

    2007-01-01

    The first stage of Novosibirsk high-power free electron laser (FEL) was commissioned in 2003. It is based on the normal conducting CW energy recovery linac (ERL). Now the FEL provides electromagnetic radiation in the wavelength range 120-230 μm. The maximum average power is 400 W. The minimum measured linewidth is 0.3%, which is close to the Fourier-transform limit. Four user stations are in operation now. Manufacturing of the second stage of the FEL (based on the four-turn ERL) is in progress

  8. Applications of high power microwaves to atmospheric modification and measurement

    Benford, J.

    1993-01-01

    The current state of proposals to use high power microwaves in the atmosphere is reviewed. HPM has been proposed to aid in the conservation of stratospheric ozone by partial breakdown, facilitating chemistry to eliminate chlorine. Another proposal is over-the-horizon radar using a partial breakdown area in the ionosphere. A key to any such effort is rapid diagnosis of the state of the atmosphere before, during and after intervention. Technology requirements of these modification and measurement proposals are reviewed. The elements of an atmospheric modification program are identified and political, economic and ideological factors are discussed

  9. New sources of high-power coherent radiation

    Sprehngl, F.

    1985-01-01

    New sources of high-power coherent radiation in the wavelength range from millimeter to ultraviolet are reviewed. Physical mechanisms underlying concepts of free electrons laser, cyclotron resonance laser and other new radiation sources are described. Free electron lasers and cyclotron resonance lasers are shown to suggest excellent possibilities for solving problems of spectroscopy, plasma heating radar and accelerator technology. Results of experiments with free electron laser in the Compton mode using linear accelerators microtrons and storage rings are given. Trends in further investigations are shown

  10. Very high power THz radiation at Jefferson Lab

    Carr, G.L.; Martin, Michael C.; McKinney, Wayne R.; Jordan, K.; Neil, George R.; Williams, G.P.

    2002-01-01

    We report the production of high power (20 watts average, ∼;1 Megawatt peak) broadband THz light based on coherent emission from relativistic electrons. We describe the source, presenting theoretical calculations and their experimental verification. For clarity we compare this source with one based on ultrafast laser techniques, and in fact the radiation has qualities closely analogous to that produced by such sources, namely that it is spatially coherent, and comprises short duration pulses with transform-limited spectral content. In contrast to conventional THz radiation, however, the intensity is many orders of magnitude greater due to the relativistic enhancement

  11. High power ECCD experiments at W7-AS

    Maassberg, H.; Geiger, J.; Laqua, H.; Marushchenko, N.B.; Wendland, C.; Rome, M.

    2001-01-01

    At the W7-AS stellarator, high power electron cyclotron current drive (ECCD) experiments are analyzed. In these net-current-free discharges, the ECCD as well as the bootstrap current are feedback controlled by an inductive current. Based on measured profiles, the neoclassical predictions for the bootstrap and the inductive current densities as well as the ECCD from the linear adjoint approach with trapped particles included are calculated, and the current balance is checked. Launch-angle scans at fixed density as well as density scans at fixed launch-angle are described. (author)

  12. Stabilized High Power Laser for Advanced Gravitational Wave Detectors

    Willke, B; Danzmann, K; Fallnich, C; Frede, M; Heurs, M; King, P; Kracht, D; Kwee, P; Savage, R; Seifert, F; Wilhelm, R

    2006-01-01

    Second generation gravitational wave detectors require high power lasers with several 100W of output power and with very low temporal and spatial fluctuations. In this paper we discuss possible setups to achieve high laser power and describe a 200W prestabilized laser system (PSL). The PSL noise requirements for advanced gravitational wave detectors will be discussed in general and the stabilization scheme proposed for the Advanced LIGO PSL will be described. Special emphasis will be given to the most demanding power stabilization requirements and new results (RIN ≤ 4x10 -9 /√Hz) will be presented

  13. Static and dynamic high power, space nuclear electric generating systems

    Wetch, J.R.; Begg, L.L.; Koester, J.K.

    1985-01-01

    Space nuclear electric generating systems concepts have been assessed for their potential in satisfying future spacecraft high power (several megawatt) requirements. Conceptual designs have been prepared for reactor power systems using the most promising static (thermionic) and the most promising dynamic conversion processes. Component and system layouts, along with system mass and envelope requirements have been made. Key development problems have been identified and the impact of the conversion process selection upon thermal management and upon system and vehicle configuration is addressed. 10 references

  14. High Efficiency Power Converter for Low Voltage High Power Applications

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based......, and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often...

  15. High power testing of a 17 GHz photocathode RF gun

    Chen, S.C.; Danly, B.G.; Gonichon, J.

    1995-01-01

    The physics and technological issues involved in high gradient particle acceleration at high microwave (RF) frequencies are under study at MIT. The 17 GHz photocathode RF gun has a 1 1/2 cell (π mode) room temperature cooper cavity. High power tests have been conducted at 5-10 MW levels with 100 ns pulses. A maximum surface electric field of 250 MV/m was achieved. This corresponds to an average on-axis gradient of 150 MeV/m. The gradient was also verified by a preliminary electron beam energy measurement. Even high gradients are expected in our next cavity design

  16. Comparison of advanced high power underground cable designs

    Erb, J.; Heinz, W.; Hofmann, A.; Koefler, H.J.; Komarek, P.; Maurer, W.; Nahar, A.

    1975-09-01

    In this paper, advanced high power underground cable designs are compared in the light of available literature, of reports and information supplied by participating industries (AEG, BICC, CGE, Pirelli, Siemens), spontaneous contributions by EdF, France, BBC and Felten and Guilleaume Kabelwerke A.G., Germany, and Hitachi, Furukawa, Fujikura and Sumitomo, Japan, and earlier studies carried out at German public research centres. The study covers cables with forced cooling by oil or water, SF 6 -cables, polyethylene cables, cryoresistive and superconducting cables. (orig.) [de

  17. Gyrocon: a deflection-modulated, high-power microwave amplifier

    Tallerico, P.J.

    1977-10-01

    A large-signal, relativistic theory of the electron-field interaction in a new class of microwave amplifiers is presented and applied to the analysis of a high-power, 450-MHz amplifier for accelerator applications. The analysis indicates that electronic efficiencies in excess of 90 percent are obtainable and that overall efficiencies of 90 percent are possible. The amplifier is unique in several respects; the electron velocity is perpendicular to the circuit energy flow, the device uses a fast-wave circuit, and the electron beam is deflection modulated

  18. Organic nonlinear crystals and high power frequency conversion

    Velsko, S.P.; Davis, L.; Wang, F.; Monaco, S.; Eimerl, D.

    1987-01-01

    The authors are searching for new second and third harmonic generators among the salts of organic acids and bases. They discuss the relevant properties of crystals from this group of compounds, including their nonlinear and phasematching characteristics, linear absorption, damage threshold and crystal growth. In addition, they summarize what is known concerning other nonlinear optical properties of these crystals, such as two-photon absorption, nonlinear refractive index, and stimulated Raman thresholds. A preliminary assessment is made of the potential of these materials for use in future high power, large aperture lasers such as those used for inertial confinement fusion experiments

  19. Study on the near-field non-linearity (SMILE) of high power diode laser arrays

    Zhang, Hongyou; Jia, Yangtao; Li, Changxuan; Zah, Chung-en; Liu, Xingsheng

    2018-02-01

    High power laser diodes have been found a wide range of industrial, space, medical applications, characterized by high conversion efficiency, small size, light weight and a long lifetime. However, due to thermal induced stress, each emitter in a semiconductor laser bar or array is displaced along p-n junction, resulting of each emitter is not in a line, called Near-field Non-linearity. Near-field Non-linearity along laser bar (also known as "SMILE") determines the outcome of optical coupling and beam shaping [1]. The SMILE of a laser array is the main obstacle to obtain good optical coupling efficiency and beam shaping from a laser array. Larger SMILE value causes a larger divergence angle and a wider line after collimation and focusing, respectively. In this letter, we simulate two different package structures based on MCC (Micro Channel Cooler) with Indium and AuSn solders, including the distribution of normal stress and the SMILE value. According to the theoretical results, we found the distribution of normal stress on laser bar shows the largest in the middle and drops rapidly near both ends. At last, we did another experiment to prove that the SMILE value of a laser bar was mainly affected by the die bonding process, rather than the operating condition.

  20. Die attach dimension and material on thermal conductivity study for high power COB LED

    Sarukunaselan, K.; Ong, N. R.; Sauli, Z.; Mahmed, N.; Kirtsaeng, S.; Sakuntasathien, S.; Suppiah, S.; Alcain, J. B.; Retnasamy, V.

    2017-09-01

    High power LED began to gain popularity in the semiconductor market due to its efficiency and luminance. Nonetheless, along with the increased in efficiency, there was an increased in the junction temperature too. The alleviating junction temperature is undesirable since the performances and lifetime will be degraded over time. Therefore, it is crucial to solve this thermal problem by maximizing the heat dissipation to the ambience. Improvising the die attach (DA) layer would be the best option because this layer is sandwiched between the chip (heat source) and the substrate (channel to the ambient). In this paper, the impact of thickness and thermal conductivity onto the junction temperature and Von Mises stress is analyzed. Results obtained showed that the junction temperature is directly proportional to the thickness but the stress was inversely proportional to the thickness of the DA. The thermal conductivity of the materials did affect the junction temperature as there was not much changes once the thermal conductivity reached 20W/mK. However, no significant changes were observed on the Von Mises stress caused by the thermal conductivity. Material with the second highest thermal conductivity had the lowest stress, whereas the highest conductivity material had the highest stress value at 20 µm. Overall, silver sinter provided the best thermal dissipation compared to the other materials.

  1. High-power free-electron lasers-technology and future applications

    Socol, Yehoshua

    2013-03-01

    Free-electron laser (FEL) is an all-electric, high-power, high beam-quality source of coherent radiation, tunable - unlike other laser sources - at any wavelength within wide spectral region from hard X-rays to far-IR and beyond. After the initial push in the framework of the “Star Wars” program, the FEL technology benefited from decades of R&D and scientific applications. Currently, there are clear signs that the FEL technology reached maturity, enabling real-world applications. E.g., successful and unexpectedly smooth commissioning of the world-first X-ray FEL in 2010 increased in one blow by more than an order of magnitude (40×) wavelength region available by FEL technology and thus demonstrated that the theoretical predictions just keep true in real machines. Experience of ordering turn-key electron beamlines from commercial companies is a further demonstration of the FEL technology maturity. Moreover, successful commissioning of the world-first multi-turn energy-recovery linac demonstrated feasibility of reducing FEL size, cost and power consumption by probably an order of magnitude in respect to previous configurations, opening way to applications, previously considered as non-feasible. This review takes engineer-oriented approach to discuss the FEL technology issues, keeping in mind applications in the fields of military and aerospace, next generation semiconductor lithography, photo-chemistry and isotope separation.

  2. Defects in semiconductors

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  3. Introduction to Semiconductor Devices

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  4. Spin physics in semiconductors

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  5. Physics of semiconductor lasers

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  6. Semiconductors bonds and bands

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  7. Defects in semiconductors

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  8. Neutron and gamma irradiation effects on power semiconductor switches

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  9. Neutron and gamma irradiation effects on power semiconductor switches

    Schwarze, G.E.; Frasca, A.J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN bipolar junction transistors (BJTs), and metal-oxide-semiconductor field effect transistors (MOSFETs)

  10. High power pulsed magnetron sputtering of transparent conducting oxides

    Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

    2008-01-01

    High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

  11. Material Processing with High Power CO2-Lasers

    Bakowsky, Lothar

    1986-10-01

    After a period of research and development lasertechnique now is regarded as an important instrument for flexible, economic and fully automatic manufacturing. Especially cutting of flat metal sheets with high power C02-lasers and CNC controlled two or three axes handling systems is a wide spread. application. Three dimensional laser cutting, laser-welding and -heat treatment are just at the be ginning of industrial use in production lines. The main. advantages of laser technology. are - high. accuracy - high, processing velocity - law thermal distortion. - no tool abrasion. The market for laser material processing systems had 1985 a volume of 300 Mio S with growth rates between, 20 % and 30 %. The topic of this lecture are hiTrh. power CO2-lasers. Besides this systems two others are used as machining tools, Nd-YAG- and Eximer lasers. All applications of high. power CO2-lasers to industrial material processing show that high processing velocity and quality are only guaranteed in case of a stable intensity. profile on the workpiece. This is only achieved by laser systems without any power and mode fluctuations and by handling systems of high accuracy. Two applications in the automotive industry are described, below as examples for laser cutting and laser welding of special cylindrical motor parts.

  12. High power nickel - cadmium cells with fiber electrodes (FNC)

    Haschka, F.; Schlieck, D.

    1986-01-01

    Nickel cadmium batteries differ greatly in their mechanical design and construction of the electrodes. Using available electrode constructions, batteries are designed which meet the requirements of specific applications and offer optimum performance. Pocket- and tubular cells are basically developed with the technology of the year 1895. Since then some improvements with todays technology have been made. The sintered cells use the technology of the 1930's and they are still limited to high power application. With this knowledge and the technology of today the fiber-structured nickel electrode (FNC) was developed at DAUG laboratory, a subsidiary company of Mercedes-Benz and Volkswagen. After ten years of experience in light weight prototype batteries for electric vehicles (1-2), the system was brought into production by a new company, DAUG-HOPPECKE. Characteristics of fiber electrodes: thickness and size can be easily changed; pure active materials are used; high conductor density; high elasticity of the structure; high porosity. Since 1983 NiCd-batteries with fiber-structured nickel electrodes (FNC) have been in production. Starting with the highly demanded cell-types for low, medium and high performance called L, M and H according to IEC 623 for low, medium and high performance applications, the program was recently completed with the X-type cell for very high power, as an alternative to sintered cells

  13. High speed micromachining with high power UV laser

    Patel, Rajesh S.; Bovatsek, James M.

    2013-03-01

    Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

  14. Development of high power pulsed CO2 laser

    Nakai, Sadao; Matoba, Masafumi; Fujita, Hisanori; Daido, Hiroyuki; Inoue, Mitsuo

    1982-01-01

    The inertial nuclear fusion research using pellet implosion has rapidly progressed accompanying laser technique improvement and output increase. As the high output lasers for this purpose, Nd glass lasers or CO 2 lasers are used. The CO 2 lasers possess the characteristics required as reactor lasers, i.e., high efficiency, high frequency repetition, possibility of scale-up and economy. So, the technical development of high power CO 2 lasers assuming also as reactor drivers has been performed at a quick pace together with the research on the improvement of efficiency of pellet implosion by 10 μm laser beam. The Institute of Laser Engineering, Osaka University, stated to build a laser system LEKKO No. 8 of 8 beams and 10 kJ based on the experiences in laser systems LEKKO No. 1 and LEKKO No. 2, and the system LEKKO No. 8 was completed in March, 1981. The operation tests for one year since then has indicated as the laser characteristics that the system performance was as designed initially. This paper reviews the structure, problems and present status of the large scale CO 2 lasers. In other words, the construction of laser system, CO 2 laser proper, oscillator, booster amplifier, prevention of parasitic oscillation, non-linear pulse propagation and fairing of output pulse form, system control and beam alignment, and high power problems are described. The results obtained are to be reported in subsequent issues. (Wakatsuki, Y.)

  15. High Power RF Transmitters for ICRF Applications on EAST

    Mao Yuzhou; Yuan Shuai; Zhao Yanping; Zhang Xinjun; Chen Gen; Cheng Yan; Wang Lei; Ju Songqing; Deng Xu; Qin Chengming; Yang Lei; Kumazawa, R.

    2013-01-01

    An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4 × 1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were designed as a part of the research and development (R and D) for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter: the three staged high power amplifier, which is composed of a 5 kW wideband solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply (HVPS). Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.

  16. Hybrid simulation of electrode plasmas in high-power diodes

    Welch, Dale R.; Rose, David V.; Bruner, Nichelle; Clark, Robert E.; Oliver, Bryan V.; Hahn, Kelly D.; Johnston, Mark D.

    2009-01-01

    New numerical techniques for simulating the formation and evolution of cathode and anode plasmas have been successfully implemented in a hybrid code. The dynamics of expanding electrode plasmas has long been recognized as a limiting factor in the impedance lifetimes of high-power vacuum diodes and magnetically insulated transmission lines. Realistic modeling of such plasmas is being pursued to aid in understanding the operating characteristics of these devices as well as establishing scaling relations for reliable extrapolation to higher voltages. Here, in addition to kinetic and fluid modeling, a hybrid particle-in-cell technique is described that models high density, thermal plasmas as an inertial fluid which transitions to kinetic electron or ion macroparticles above a prescribed energy. The hybrid technique is computationally efficient and does not require resolution of the Debye length. These techniques are first tested on a simple planar diode then applied to the evolution of both cathode and anode plasmas in a high-power self-magnetic pinch diode. The impact of an intense electron flux on the anode surface leads to rapid heating of contaminant material and diode impedance loss.

  17. Perspectives of high power ultrasound in food preservation

    Evelyn; Silva, F. V. M.

    2018-04-01

    High Power ultrasound can be used to alter physicochemical properties and improve the quality of foods during processing due to a number of mechanical, chemical, and biochemical effects arising from acoustic cavitation. Cavitation creates pressure waves that inactivate microbes and de-agglomerate bacterial clusters or release ascospores from fungal asci. Bacterial and heat resistant fungal spores’ inactivation is a great challenge in food preservation due to their ability to survive after conventional food processing, causing food-borne diseases or spoilage. In this work, a showcase of application of high power ultrasound combined with heat or thermosonication, to inactivate bacterial spores i.e. Bacillus cereus spores in beef slurry and fungal spores i.e. Neosartorya fischeri ascospores in apple juice was presented and compared with thermal processing. Faster inactivation was achieved at higher TS (24 KHz, 0.33 W/g or W/mL) temperatures. Around 2 log inactivation was obtained for B. cereus spores after1 min (70 °C) and N. fischeri ascospores after 30 min (75 °C). Thermal treatments caused <1 log in B. Cereus after 2 min (70 °C) and no inactivation in N. Fischeri ascospores after 30 min (80 °C). In conclusion, temperature plays a significant role for TS spore inactivation and TS was more effective than thermal treatment alone. The mould spores were more resistant than the bacterial spores.

  18. High power RF systems for the BNL ERL project

    Zaltsman, A.; Lambiase, R.

    2011-03-28

    The Energy Recovery Linac (ERL) project, now under construction at Brookhaven National Laboratory, requires two high power RF systems. The first RF system is for the 703.75 MHz superconducting electron gun. The RF power from this system is used to drive nearly half an Ampere of beam current to 2 MeV. There is no provision to recover any of this energy so the minimum amplifier power is 1 MW. It consists of 1 MW CW klystron, transmitter and power supplies, 1 MW circulator, 1 MW dummy load and a two-way power splitter. The second RF system is for the 703.75 MHz superconducting cavity. The system accelerates the beam to 54.7 MeV and recovers this energy. It will provide up to 50 kW of CW RF power to the cavity. It consists of 50 kW transmitter, circulator, and dummy load. This paper describes the two high power RF systems and presents the test data for both.

  19. Exploring novel high power density concepts for attractive fusion systems

    Abdou, M.A. [California State Univ., Los Angeles, CA (United States). Dept. of Mechanical Engineering; APEX Team

    1999-05-01

    The advanced power extraction study is aimed at exploring innovative concepts for fusion power technology (FPT) that can tremendously enhance the potential of fusion as an attractive and competitive energy source. Specifically, the study is exploring new and `revolutionary` concepts that can provide the capability to efficiently extract heat from systems with high neutron and surface heat loads while satisfying all the FPT functional requirements and maximizing reliability, maintainability, safety, and environmental requirements. The primary criteria for measuring performance of the new concepts are: (1) high power density capability with a peak neutron wall load (NWL) of {proportional_to}10 MW m{sup -2} and surface heat flux of {proportional_to}2 MW m{sup -2}; (2) high power conversion efficiency, {proportional_to}40% net; and (3) clear potential to achieve high availability; specifically low failure rate, large design margin, and short downtime for maintenance. A requirement that MTBF{>=}43 MTTR was derived as a necessary condition to achieve the required first wall/blanket availability, where MTBF is the mean time between failures and MTTR is the mean time to recover. Highlights of innovative and promising new concepts that may satisfy these criteria are provided. (orig.) 40 refs.

  20. Trends in high power laser applications in civil engineering

    Wignarajah, Sivakumaran; Sugimoto, Kenji; Nagai, Kaori

    2005-03-01

    This paper reviews the research and development efforts made on the use of lasers for material processing in the civil engineering industry. Initial investigations regarding the possibility of using lasers in civil engineering were made in the 1960s and '70s, the target being rock excavation. At that time however, the laser powers available were too small for any practical application utilization. In the 1980's, the technology of laser surface cleaning of historically important structures was developed in Europe. In the early 1990s, techniques of laser surface modification, including glazing and coloring of concrete, roughening of granite stones, carbonization of wood were pursued, mainly in Japan. In the latter part of the decade, techniques of laser decontamination of concrete surfaces in nuclear facilities were developed in many countries, and field tests were caried out in Japan. The rapid advances in development of diode lasers and YAG lasers with high power outputs and efficiencies since the late 1990's have led to a revival of worldwide interest in the use of lasers for material processing in civil engineering. The authors believe that, in the next 10 years or so, the advent of compact high power lasers is likely to lead to increased use of lasers of material processing in the field of civil engineering.

  1. Analysis and control of high power synchronous rectifier

    Singh Tejinder.

    1993-01-01

    The description, steady state/dynamic analysis and control design of a high power synchronous rectifier is presented. The proposed rectifier system exploits selective harmonic elimination modulation techniques to minimize filtering requirements, and overcomes the dc voltage limitations of prior art equipment. A detailed derivation of the optimum pulse width modulation switching patterns, in the low frequency range for high power applications is presented. A general mathematical model of the rectifier is established which is non-linear and time-invariant. The transformation of reference frame and small signal linearization techniques are used to obtain closed form solutions from the mathematical model. The modelling procedure is verified by computer simulation. The closed loop design of the synchronous rectifier based on a phase and amplitude control strategy is investigated. The transfer functions derived from this analysis are used for the design of the regulators. The steady-state and dynamic results predicted by computer simulation are verified by PECAN. A systematic design procedure is developed and a detailed design example of a 1 MV-amp rectifer system is presented. 23 refs., 33 figs.

  2. Innovation on high-power long-pulse gyrotrons

    Litvak, Alexander; Sakamoto, Keishi; Thumm, Manfred

    2011-01-01

    Progress in the worldwide development of high-power gyrotrons for magnetic confinement fusion plasma applications is described. After technology breakthroughs in research on gyrotron components in the 1990s, significant progress has been achieved in the last decade, in particular, in the field of long-pulse and continuous wave (CW) gyrotrons for a wide range of frequencies. At present, the development of 1 MW-class CW gyrotrons has been very successful; these are applicable for self-ignition experiments on fusion plasmas and their confinement in the tokamak ITER, for long-pulse confinement experiments in the stellarator Wendelstein 7-X (W7-X) and for EC H and CD in the future tokamak JT-60SA. For this progress in the field of high-power long-pulse gyrotrons, innovations such as the realization of high-efficiency stable oscillation in very high order cavity modes, the use of single-stage depressed collectors for energy recovery, highly efficient internal quasi-optical mode converters and synthetic diamond windows have essentially contributed. The total tube efficiencies are around 50% and the purity of the fundamental Gaussian output mode is 97% and higher. In addition, activities for advanced gyrotrons, e.g. a 2 MW gyrotron using a coaxial cavity, multi-frequency 1 MW gyrotrons and power modulation technology, have made progress.

  3. Optical Fiber for High-Power Optical Communication

    Kenji Kurokawa

    2012-09-01

    Full Text Available We examined optical fibers suitable for avoiding such problems as the fiber fuse phenomenon and failures at bends with a high power input. We found that the threshold power for fiber fuse propagation in photonic crystal fiber (PCF and hole-assisted fiber (HAF can exceed 18 W, which is more than 10 times that in conventional single-mode fiber (SMF. We considered this high threshold power in PCF and HAF to be caused by a jet of high temperature fluid penetrating the air holes. We showed examples of two kinds of failures at bends in conventional SMF when the input power was 9 W. We also observed the generation of a fiber fuse under a condition that caused a bend-loss induced failure. We showed that one solution for the failures at bends is to use optical fibers with a low bending loss such as PCF and HAF. Therefore, we consider PCF and HAF to be attractive solutions to the problems of the fiber fuse phenomenon and failures at bends with a high power input.

  4. Design of high power solid-state pulsed laser resonators

    Narro, R.; Ponce, L.; Arronte, M.

    2009-01-01

    Methods and configurations for the design of high power solid-state pulsed laser resonators, operating in free running, are presented. For fundamental mode high power resonators, a method is proposed for the design of a resonator with joined stability zones. In the case of multimode resonators, two configurations are introduced for maximizing the laser overall efficiency due to the compensation of the astigmatism induced by the excitation. The first configuration consists in a triangular ring resonator. The results for this configuration are discussed theoretically, showing that it is possible to compensate the astigmatism of the thermal lens virtually in a 100%; however this is only possible for a specific pumping power. The second configuration proposes a dual-active medium resonator, rotated 90 degree one from the other around the optical axis, where each active medium acts as an astigmatic lens of the same dioptric power. The reliability of this configuration is corroborated experimentally using a Nd:YAG dual-active medium resonator. It is found that in the pumping power range where the astigmatism compensation is possible, the overall efficiency is constant, even when increasing the excitation power with the consequent increase of the thermal lens dioptric power. (Author)

  5. Nuclear based diagnostics in high-power laser applications

    Guenther, Marc; Sonnabend, Kerstin; Harres, Knut; Otten, Anke; Roth, Markus [TU Darmstadt, Institut fuer Kernphysik, Darmstadt (Germany); Vogt, Karsten; Bagnoud, Vincent [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany)

    2010-07-01

    High-power lasers allow focused intensities of >10{sup 18} W/cm{sup 2}. During the laser-solid interaction, an intense relativistic electron current is injected from the plasma into the target. One challenge is to characterize the electron dynamic close to the interaction region. Moreover, next generation high-power laser proton acceleration leads to high proton fluxes, which require novel, nuclear diagnostic techniques. We present an activation-based nuclear pyrometry for the investigation of electrons generated in relativistic laser-solid interactions. We use novel activation targets consisting of several isotopes with different photo-neutron disintegration thresholds. The electrons are decelerated inside the target via bremsstrahlung processes. The high-energy bremsstrahlung induces photo-nuclear reactions. In this energy range no disturbing low energy effects are important. Via the pyrometry the Reconstruction of the absolute yield, spectral and spatial distribution of the electrons is possible. For the characterization of proton beams we present a nuclear activation imaging spectroscopy (NAIS). The diagnostic is based on proton-neutron disintegration reactions of copper stacked in consecutive layers. An autoradiography of copper layers leads to spectrally and spatially reconstruction of the beam profile.

  6. Research on calorimeter for high-power microwave measurements

    Ye, Hu; Ning, Hui; Yang, Wensen; Tian, Yanmin; Xiong, Zhengfeng; Yang, Meng; Yan, Feng; Cui, Xinhong [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi’an, Shaanxi 710024 (China)

    2015-12-15

    Based on measurement of the volume increment of polar liquid that is a result of heating by absorbed microwave energy, two types of calorimeters with coaxial capacitive probes for measurement of high-power microwave energy are designed in this paper. The first is an “inline” calorimeter, which is placed as an absorbing load at the end of the output waveguide, and the second is an “offline” calorimeter that is placed 20 cm away from the radiation horn of the high-power microwave generator. Ethanol and high density polyethylene are used as the absorbing and housing materials, respectively. Results from both simulations and a “cold test” on a 9.3 GHz klystron show that the “inline” calorimeter has a measurement range of more than 100 J and an energy absorption coefficient of 93%, while the experimental results on a 9.3 GHz relativistic backward-wave oscillator show that the device’s power capacity is approximately 0.9 GW. The same experiments were also carried out for the “offline” calorimeter, and the results indicate that it can be used to eliminate the effects of the shock of the solenoid on the measurement curves and that the device has a higher power capacity of 2.5 GW. The results of the numerical simulations, the “cold tests,” and the experiments show good agreement.

  7. High-Power Lasers for Science and Society

    Siders, C. W. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Haefner, C. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2016-10-05

    Since the first demonstration of the laser in 1960 by Theodore Maiman at Hughes Research Laboratories, the principal defining characteristic of lasers has been their ability to focus unprecedented powers of light in space, time, and frequency. High-power lasers have, over the ensuing five and a half decades, illuminated entirely new fields of scientific endeavor as well as made a profound impact on society. While the United States pioneered lasers and their early applications, we have been eclipsed in the past decade by highly effective national and international networks in both Europe and Asia, which have effectively focused their energies, efforts, and resources to achieve greater scientific and societal impact. This white paper calls for strategic investment which, by striking an appropriate balance between distributing our precious national funds and establishing centers of excellence, will ensure a broad pipeline of people and transformative ideas connecting our world-leading universities, defining flagship facilities stewarded by our national laboratories, and driving innovation across industry, to fully exploit the potential of high-power lasers.

  8. Metallic plates lens focalizing a high power microwave beam

    Rebuffi, L.

    1987-08-01

    A metallic grating composed of thin parallel plates opportunely spaced, permits to correct the phase of an incident high power microwave beam. In this work we show how it is possible to obtain a beam focalisation (lens), a beam deflection (prisma), or a variation in the polarization (polarizer) using parallel metallic plates. The main design parameters are here presented, in order to obtain the wanted phase modification keeping low the diffraction, the reflected power, the ohmic losses and avoiding breakdowns. Following the given criteria, a metallic plate lens has been realized to focalize the 200 KW, 100 msec 60 GHz beam used in the ECRH experiment on the TFR tokamak. The experimental beam concentration followed satisfactory the design requirements. In fact, the maximum intensity increased about twice the value without lens. In correspondence of this distance a reduction of the beam size of about 50% have been measured for the -3 dB radius. The lens supported high power tests without breakdowns or increase of the reflected power

  9. Wavelength dependency in high power laser cutting and welding

    Havrilla, David; Ziermann, Stephan; Holzer, Marco

    2012-03-01

    Laser cutting and welding have been around for more than 30 years. Within those three decades there has never been a greater variety of high power laser types and wavelengths to choose from than there is today. There are many considerations when choosing the right laser for any given application - capital investment, cost of ownership, footprint, serviceability, along with a myriad of other commercial & economic considerations. However, one of the most fundamental questions that must be asked and answered is this - "what type of laser is best suited for the application?". Manufacturers and users alike are realizing what, in retrospect, may seem obvious - there is no such thing as a universal laser. In many cases there is one laser type and wavelength that clearly provides the highest quality application results. This paper will examine the application fields of high power, high brightness 10.6 & 1 micron laser welding & cutting and will provide guidelines for selecting the laser that is best suited for the application. Processing speed & edge quality serve as key criteria for cutting. Whereas speed, seam quality & spatter ejection provide the paradigm for welding.

  10. NdFeB magnets for high-power motors

    Oswald, B.; Soell, M.; Berberich, A.

    1998-01-01

    The use of REM in electric motors especially in the case of servo drives is state of the art today. Whether permanent magnet types SmCo or NdFeB are also suitable for high power main drives has to be decided regarding criteria which apply to high power machines. In this paper operation characteristics of common electric motors and especially those of drives with controlled speed are presented. In the case of electric motors with REM, increased output power and high efficiency at the same time are to be expected in comparison to classical drives. This makes them attractive for a number of applications. However their speed range is restricted for fundamental reasons as normally weakening of field is not possible. It is to be expected that due to their advantages the use of permanent magnet motors for elevated output power also will increase. Besides other forms they can be used also as special design such as e.g. round or flat linear motors. Their power density (force density) makes them attractive for numerous applications in this form. A comparison between permanent magnet motors with superconducting motors made of bulk HTS material gives insight into the wide area of future design of electrical machines. (orig.)

  11. Spallation Neutron Source High Power RF Installation and Commissioning Progress

    McCarthy, Michael P; Bradley, Joseph T; Fuja, Ray E; Gurd, Pamela; Hardek, Thomas; Kang, Yoon W; Rees, Daniel; Roybal, William; Young, Karen A

    2005-01-01

    The Spallation Neutron Source (SNS) linac will provide a 1 GeV proton beam for injection into the accumulator ring. In the normal conducting (NC) section of this linac, the Radio Frequency Quadupole (RFQ) and six drift tube linac (DTL) tanks are powered by seven 2.5 MW, 402.5 MHz klystrons and the four coupled cavity linac (CCL) cavities are powered by four 5.0 MW, 805 MHz klystrons. Eighty-one 550 kW, 805 MHz klystrons each drive a single cavity in the superconducting (SC) section of the linac. The high power radio frequency (HPRF) equipment was specified and procured by LANL and tested before delivery to ensure a smooth transition from installation to commissioning. Installation of RF equipment to support klystron operation in the 350-meter long klystron gallery started in June 2002. The final klystron was set in place in September 2004. Presently, all RF stations have been installed and high power testing has been completed. This paper reviews the progression of the installation and testing of the HPRF Sys...

  12. Research on calorimeter for high-power microwave measurements.

    Ye, Hu; Ning, Hui; Yang, Wensen; Tian, Yanmin; Xiong, Zhengfeng; Yang, Meng; Yan, Feng; Cui, Xinhong

    2015-12-01

    Based on measurement of the volume increment of polar liquid that is a result of heating by absorbed microwave energy, two types of calorimeters with coaxial capacitive probes for measurement of high-power microwave energy are designed in this paper. The first is an "inline" calorimeter, which is placed as an absorbing load at the end of the output waveguide, and the second is an "offline" calorimeter that is placed 20 cm away from the radiation horn of the high-power microwave generator. Ethanol and high density polyethylene are used as the absorbing and housing materials, respectively. Results from both simulations and a "cold test" on a 9.3 GHz klystron show that the "inline" calorimeter has a measurement range of more than 100 J and an energy absorption coefficient of 93%, while the experimental results on a 9.3 GHz relativistic backward-wave oscillator show that the device's power capacity is approximately 0.9 GW. The same experiments were also carried out for the "offline" calorimeter, and the results indicate that it can be used to eliminate the effects of the shock of the solenoid on the measurement curves and that the device has a higher power capacity of 2.5 GW. The results of the numerical simulations, the "cold tests," and the experiments show good agreement.

  13. Biggest semiconductor installed

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  14. Compact semiconductor lasers

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  15. High power ring methods and accelerator driven subcritical reactor application

    Tahar, Malek Haj [Univ. of Grenoble (France)

    2016-08-07

    High power proton accelerators allow providing, by spallation reaction, the neutron fluxes necessary in the synthesis of fissile material, starting from Uranium 238 or Thorium 232. This is the basis of the concept of sub-critical operation of a reactor, for energy production or nuclear waste transmutation, with the objective of achieving cleaner, safer and more efficient process than today’s technologies allow. Designing, building and operating a proton accelerator in the 500-1000 MeV energy range, CW regime, MW power class still remains a challenge nowadays. There is a limited number of installations at present achieving beam characteristics in that class, e.g., PSI in Villigen, 590 MeV CW beam from a cyclotron, SNS in Oakland, 1 GeV pulsed beam from a linear accelerator, in addition to projects as the ESS in Europe, a 5 MW beam from a linear accelerator. Furthermore, coupling an accelerator to a sub-critical nuclear reactor is a challenging proposition: some of the key issues/requirements are the design of a spallation target to withstand high power densities as well as ensure the safety of the installation. These two domains are the grounds of the PhD work: the focus is on the high power ring methods in the frame of the KURRI FFAG collaboration in Japan: upgrade of the installation towards high intensity is crucial to demonstrate the high beam power capability of FFAG. Thus, modeling of the beam dynamics and benchmarking of different codes was undertaken to validate the simulation results. Experimental results revealed some major losses that need to be understood and eventually overcome. By developing analytical models that account for the field defects, one identified major sources of imperfection in the design of scaling FFAG that explain the important tune variations resulting in the crossing of several betatron resonances. A new formula is derived to compute the tunes and properties established that characterize the effect of the field imperfections on the

  16. Radiation effects in semiconductors

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  17. Market survey of semiconductors

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  18. Electronic properties of semiconductor heterostructures

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  19. Latest development of high-power fiber lasers in SPI

    Norman, Stephen; Zervas, Mikhail N.; Appleyard, Andrew; Durkin, Michael K.; Horley, Ray; Varnham, Malcolm P.; Nilsson, Johan; Jeong, Yoonchan

    2004-06-01

    High Power Fiber Lasers (HPFLs) and High Power Fiber Amplifiers (HPFAs) promise a number of benefits in terms of their high optical efficiency, degree of integration, beam quality, reliability, spatial compactness and thermal management. These benefits are driving the rapid adoption of HPFLs in an increasingly wide range of applications and power levels ranging from a few Watts, in for example analytical applications, to high-power >1kW materials processing (machining and welding) applications. This paper describes SPI"s innovative technologies, HPFL products and their performance capabilities. The paper highlights key aspects of the design basis and provides an overview of the applications space in both the industrial and aerospace domains. Single-fiber CW lasers delivering 1kW output power at 1080nm have been demonstrated and are being commercialized for aerospace and industrial applications with wall-plug efficiencies in the range 20 to 25%, and with beam parameter products in the range 0.5 to 100 mm.mrad (corresponding to M2 = 1.5 to 300) tailored to application requirements. At power levels in the 1 - 200 W range, SPI"s proprietary cladding-pumping technology, GTWaveTM, has been employed to produce completely fiber-integrated systems using single-emitter broad-stripe multimode pump diodes. This modular construction enables an agile and flexible approach to the configuration of a range of fiber laser / amplifier systems for operation in the 1080nm and 1550nm wavelength ranges. Reliability modeling is applied to determine Systems martins such that performance specifications are robustly met throughout the designed product lifetime. An extensive Qualification and Reliability-proving programme is underway to qualify the technology building blocks that are utilized for the fiber laser cavity, pump modules, pump-driver systems and thermo-mechanical management. In addition to the CW products, pulsed fiber lasers with pulse energies exceeding 1mJ with peak pulse

  20. High-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser

    Zhuang, W Z; Chang, M T; Su, K W; Huang, K F; Chen, Y F

    2013-01-01

    We report on high-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser. A semiconductor saturable absorber mirror is developed to achieve synchronously mode-locked operation at two spectral bands centered at 1031.67 and 1049.42 nm with a pulse duration of 1.54 ps and a pulse repetition rate of 80.3 GHz. With a diamond heat spreader to improve the heat removal efficiency, the average output power can be up to 1.1 W at an absorbed pump power of 5.18 W. The autocorrelation traces reveal that the mode-locked pulse is modulated with a beat frequency of 4.92 THz and displays a modulation depth to be greater than 80%. (paper)

  1. System considerations for airborne, high power superconducting generators

    Southall, H.L.; Oberly, C.E.

    1979-01-01

    The design of rotating superconducting field windings in high power generators is greatly influenced by system considerations. Experience with two superconducting generators designed to produce 5 and 20 Mw resulted in a number of design restrictions. The design restrictions imposed by system considerations have not prevented low weight and high voltage power generation capability. The application of multifilament Nb;sub 3;Sn has permitted a large thermal margin to be designed into the rotating field winding. This margin permits the field winding to remain superconducting under severe system operational requirements. System considerations include: fast rotational startup, fast ramped magnetic fields, load induced transient fields and airborne cryogen logistics. Preliminary selection of a multifilament Nb;sub 3;Sn cable has resulted from these considerations. The cable will carry 864 amp at 8.5K and 6.8 Tesla. 10 refs

  2. Investigation of acoustic resonances in high-power lamps

    Kettlitz, M; Zalach, J; Rarbach, J

    2011-01-01

    High-power, medium-pressure, mercury-containing lamps are used as UV sources for many industrial applications. Lamps investigated in this paper are driven with an electronic ballast with a non-sinusoidal current waveform at a fixed frequency of 20 kHz and a maximum power output of 35 kW. Instabilities can occur if the input power is reduced below 50%. The reason is identified as acoustic resonances in the lamp. Comparison of calculated and measured resonance frequencies shows a good agreement and explains the observed lamp behaviour. This has led to the development of a new ballast prototype which is able to avoid instabilities by changing the driving frequency dependent on the applied power.

  3. Fast optical shutters for Nova, a high power fusion laser

    Bradley, L.P.; Gagnon, W.L.; Carder, B.M.

    1977-01-01

    Preliminary design and performance test results for fast optical shutters intended for use in the Nova high power fusion laser system are briefly described. Both an opening shutter to protect the pellet target from amplified spontaneous emission (ASE), and a closing shutter to protect the laser from light reflected back from the target are discussed. Faraday rotators, synchronized by a 400 Hz oscillator, provide an opening shutter mechanism with an opening time of approximately 10 μs. A plasma closing shutter, employing electrical sublimation of a foil, provide a shutter closing time of 70 ns +- 20 ns. Energy for foil sublimation is provided by discharge of a 42 J capacitor bank. Implementation of these shutter techniques in the Nova system is anticipated to improve laser output power and efficiency

  4. High power RF window deposition apparatus, method, and device

    Ives, Lawrence R.; Lucovsky, Gerald; Zeller, Daniel

    2017-07-04

    A process for forming a coating for an RF window which has improved secondary electron emission and reduced multipactor for high power RF waveguides is formed from a substrate with low loss tangent and desirable mechanical characteristics. The substrate has an RPAO deposition layer applied which oxygenates the surface of the substrate to remove carbon impurities, thereafter has an RPAN deposition layer applied to nitrogen activate the surface of the substrate, after which a TiN deposition layer is applied using Titanium tert-butoxide. The TiN deposition layer is capped with a final RPAN deposition layer of nitridation to reduce the bound oxygen in the TiN deposition layer. The resulting RF window has greatly improved titanium layer adhesion, reduced multipactor, and is able to withstand greater RF power levels than provided by the prior art.

  5. Advanced Electrodes for High Power Li-ion Batteries

    Christian M. Julien

    2013-03-01

    Full Text Available While little success has been obtained over the past few years in attempts to increase the capacity of Li-ion batteries, significant improvement in the power density has been achieved, opening the route to new applications, from hybrid electric vehicles to high-power electronics and regulation of the intermittency problem of electric energy supply on smart grids. This success has been achieved not only by decreasing the size of the active particles of the electrodes to few tens of nanometers, but also by surface modification and the synthesis of new multi-composite particles. It is the aim of this work to review the different approaches that have been successful to obtain Li-ion batteries with improved high-rate performance and to discuss how these results prefigure further improvement in the near future.

  6. High-power laser experiments to study collisionless shock generation

    Sakawa Y.

    2013-11-01

    Full Text Available A collisionless Weibel-instability mediated shock in a self-generated magnetic field is studied using two-dimensional particle-in-cell simulation [Kato and Takabe, Astophys. J. Lett. 681, L93 (2008]. It is predicted that the generation of the Weibel shock requires to use NIF-class high-power laser system. Collisionless electrostatic shocks are produced in counter-streaming plasmas using Gekko XII laser system [Kuramitsu et al., Phys. Rev. Lett. 106, 175002 (2011]. A NIF facility time proposal is approved to study the formation of the collisionless Weibel shock. OMEGA and OMEGA EP experiments have been started to study the plasma conditions of counter-streaming plasmas required for the NIF experiment using Thomson scattering and to develop proton radiography diagnostics.

  7. Reliability of high power electron accelerators for radiation processing

    Zimek, Z.

    2011-01-01

    Accelerators applied for radiation processing are installed in industrial facilities where accelerator availability coefficient should be at the level of 95% to fulfill requirements according to industry standards. Usually the exploitation of electron accelerator reviles the number of short and few long lasting failures. Some technical shortages can be overcome by practical implementation the experience gained in accelerator technology development by different accelerator manufactures. The reliability/availability of high power accelerators for application in flue gas treatment process must be dramatically improved to meet industrial standards. Support of accelerator technology dedicated for environment protection should be provided by governmental and international institutions to overcome accelerator reliability/availability problem and high risk and low direct profit in this particular application. (author)

  8. An adaptive crystal bender for high power synchrotron radiation beams

    Berman, L.E.; Hastings, J.B.

    1992-01-01

    Perfect crystal monochromators cannot diffract x-rays efficiently, nor transmit the high source brightness available at synchrotron radiation facilities, unless surface strains within the beam footprint are maintained within a few arcseconds. Insertion devices at existing synchrotron sources already produce x-ray power density levels that can induce surface slope errors of several arcseconds on silicon monochromator crystals at room temperature, no matter how well the crystal is cooled. The power density levels that will be produced by insertion devices at the third-generation sources will be as much as a factor of 100 higher still. One method of restoring ideal x-ray diffraction behavior, while coping with high power levels, involves adaptive compensation of the induced thermal strain field. The design and performance, using the X25 hybrid wiggler beam line at the National Synchrotron Light Source (NSLS), of a silicon crystal bender constructed for this purpose are described

  9. Prospects for high-power radioactive beam facilities worldwide

    Nolen, Jerry A

    2003-01-01

    Advances in accelerators, targets, ion sources, and experimental instrumentation are making possible ever more powerful facilities for basic and applied research with short-lived radioactive isotopes. There are several current generation facilities, based on a variety of technologies, operating worldwide. These include, for example, those based on the in-flight method such as the recently upgraded National Superconducting Cyclotron Laboratory at Michigan State University, the facility at RIKEN in Japan, GANIL in Caen, France, and GSI in Darmstadt, Germany. Present facilities based on the Isotope-Separator On-Line method include, for example, the ISOLDE laboratory at CERN, HRIBF at Oak Ridge, and the new high-power facility ISAC at TRIUMF in Vancouver. Next-generation facilities include the Radioactive-Ion Factory upgrade of RIKEN to higher energy and intensity and the upgrade of ISAC to a higher energy secondary beam; both of these projects are in progress. A new project, LINAG, to upgrade the capabilities at...

  10. Electron diode oscillators for high-power RF generation

    Humphries, S.

    1989-01-01

    Feedback oscillators have been used since the invention of the vacuum tube. This paper describes the extension of these familiar circuits to the regime of relativistic electron beam diodes. Such devices have potential application for the generation of high power RF radiation in the range 50-250 MHz, 1-10 GW with 20-60% conversion efficiency. This paper reviews the theory of the oscillator and the results of a design study. Calculations for the four-electrode diode with EGUN and EBQ show that good modulations of 30 kA electron beam at 600 kV can be achieved with moderate field stress on the electrodes. Conditions for oscillation have been studied with an in-house transmission line code. A design for a 7.5 GW oscillator at 200 MHz with 25% conversion efficiency is presented

  11. High Power Microwave Tubes: Basics and Trends, Volume 1

    Kesari, Vishal; Basu, B. N.

    2018-01-01

    Our aim in this book is to present a bird's-eye view of microwave tubes (MWTs) which continue to be important despite competitive incursions from solid-state devices (SSDs). We have presented a broad and introductory survey which we hope the readers would be encouraged to read rather than going through lengthier books, and subsequently explore the field of MWTs further in selected areas of relevance to their respective interests. We hope that the present book would motivate newcomers to pursue research in MWTs and apprise them as well as decision makers of the salient features and prospects of as well as the trends of progress in MWTs. The scope of ever expanding applications of MWTs in the high power and high frequency regime will sustain and intensify the research and development in MWTs in coming years.

  12. High Power Wind Generator Designs with Less or No PMs

    Boldea, Ion; Tutelea, Lucian; Blaabjerg, Frede

    2014-01-01

    synchronous generators, by doubly-fed (wound rotor) induction and cage induction generators and by introducing new topologies with pertinent costs for high power (MW range) wind energy conversion units. The present overview attempts, based on recent grid specifications, an evaluation of commercial and novel...... considering the interaction with the PWM converter in terms of power/speed range, losses, kVA, and costs) rather than on the control issues which abound in literature, will be of use for future R&D efforts in wind energy conversion, storage and use.......The recent steep increase in high energy permanent magnet (PM) price (above 130$/kg and more) triggered already strong R&D efforts to develop wind generators with less PMs (less weight in NdFeB magnets/kW or the use of ferrite PMs) or fully without PMs. All these by optimizing existing dc excited...

  13. High-power fiber lasers for photocathode electron injectors

    Zhi Zhao

    2014-05-01

    Full Text Available Many new applications for electron accelerators require high-brightness, high-average power beams, and most rely on photocathode-based electron injectors as a source of electrons. To achieve such a photoinjector, one requires both a high-power laser system to produce the high average current beam, and also a system at reduced repetition rate for electron beam diagnostics to verify high beam brightness. Here we report on two fiber laser systems designed to meet these specific needs, at 50 MHz and 1.3 GHz repetition rate, together with pulse pickers, second harmonic generation, spatiotemporal beam shaping, intensity feedback, and laser beam transport. The performance and flexibility of these laser systems have allowed us to demonstrate electron beam with both low emittance and high average current for the Cornell energy recovery linac.

  14. High power light gas helicon plasma source for VASIMR

    Squire, Jared P.; Chang-Diaz, Franklin R.; Glover, Timothy W.; Jacobson, Verlin T.; McCaskill, Greg E.; Winter, D. Scott; Baity, F. Wally; Carter, Mark D.; Goulding, Richard H.

    2006-01-01

    In the Advanced Space Propulsion Laboratory (ASPL) helicon experiment (VX-10) we have measured a plasma flux to input gas rate ratio near 100% for both helium and deuterium at power levels up to 10 kW. Recent results at Oak Ridge National Laboratory (ORNL) show enhanced efficiency operation with a high power density, over 5 kW in a 5 cm diameter tube. Our helicon is presently 9 cm in diameter and operates up to 10 kW of input power. The data here uses a Boswell double-saddle antenna design with a magnetic cusp just upstream of the antenna. Similar to ORNL, for deuterium at near 10 kW, we find an enhanced performance of operation at magnetic fields above the lower hybrid matching condition

  15. A thermosyphon heat pipe cooler for high power LEDs cooling

    Li, Ji; Tian, Wenkai; Lv, Lucang

    2016-08-01

    Light emitting diode (LED) cooling is facing the challenge of high heat flux more seriously with the increase of input power and diode density. The proposed unique thermosyphon heat pipe heat sink is particularly suitable for cooling of high power density LED chips and other electronics, which has a heat dissipation potential of up to 280 W within an area of 20 mm × 22 mm (>60 W/cm2) under natural air convection. Meanwhile, a thorough visualization investigation was carried out to explore the two phase flow characteristics in the proposed thermosyphon heat pipe. Implementing this novel thermosyphon heat pipe heat sink in the cooling of a commercial 100 W LED integrated chip, a very low apparent thermal resistance of 0.34 K/W was obtained under natural air convection with the aid of the enhanced boiling heat transfer at the evaporation side and the enhanced natural air convection at the condensation side.

  16. High power microwave emission and diagnostics of microsecond electron beams

    Gilgenbach, R; Hochman, J M; Jayness, R; Rintamaki, J I; Lau, Y Y; Luginsland, J; Lash, J S [Univ. of Michigan, Ann Arbor, MI (United States). Intense Electron Beam Interaction Lab.; Spencer, T A [Air Force Phillips Lab., Kirtland AFB, NM (United States)

    1997-12-31

    Experiments were performed to generate high power, long-pulse microwaves by the gyrotron mechanism in rectangular cross-section interaction cavities. Long-pulse electron beams are generated by MELBA (Michigan Electron Long Beam Accelerator), which operates with parameters: -0.8 MV, 1-10 kA, and 0.5-1 microsecond pulse length. Microwave power levels are in the megawatt range. Polarization control is being studied by adjustment of the solenoidal magnetic field. Initial results show polarization power ratios up to a factor of 15. Electron beam dynamics (V{sub perp}/V{sub par}) are being measured by radiation darkening on glass plates. Computer modeling utilizes the MAGIC Code for electromagnetic waves and a single electron orbit code that includes a distribution of angles. (author). 4 figs., 4 refs.

  17. Progress of compact Marx generators high power microwave source

    Liu Jinliang; Fan Xuliang; Bai Guoqiang; Cheng Xinbing

    2012-01-01

    The compact Marx generators, which can operate at a certain repetition frequency with small size, light weight, and high energy efficiency, are widely used in narrowband, wideband and ultra-wideband high power microwave (HPM) sources. This type of HPM source based on compact Marx generators is a worldwide research focus in recent years, and is important trend of development. The developments of this type of HPM source are described systemically in this paper. The output parameters and structural characteristics are reviewed, and the trends of development are discussed. This work provides reference and evidence for us to master the status of the HPM source based on compact Marx generators correctly and to explore its technical routes scientifically. (authors)

  18. Reliability of high power electron accelerators for radiation processing

    Zimek, Z. [Department of Radiation Chemistry and Technology, Institute of Nuclear Chemistry and Technology, Warsaw (Poland)

    2011-07-01

    Accelerators applied for radiation processing are installed in industrial facilities where accelerator availability coefficient should be at the level of 95% to fulfill requirements according to industry standards. Usually the exploitation of electron accelerator reviles the number of short and few long lasting failures. Some technical shortages can be overcome by practical implementation the experience gained in accelerator technology development by different accelerator manufactures. The reliability/availability of high power accelerators for application in flue gas treatment process must be dramatically improved to meet industrial standards. Support of accelerator technology dedicated for environment protection should be provided by governmental and international institutions to overcome accelerator reliability/availability problem and high risk and low direct profit in this particular application. (author)

  19. High-power CW LINAC for food irradiation

    Alimov, A.S.; Knapp, E.A.; Shvedunov, V.I.; Trower, W.P.

    2000-01-01

    The continuing high profile food poisoning incidents are beginning to attract food processors using electron and γ-ray sterilization technologies. The present method of choice uses radioactive isotopes but high-power electron particle accelerators are proving an increasingly attractive alternative. We are developing a family of compact industrial continuous wave linear accelerators which produce electrons with energies from 600 keV in increments of ∼600 keV and with beam power of 30 kW increasing in increments of 30 kW. Here, we describe the performance of our 1st section that accelerates 15 keV gun electrons to relativistic energies and then we sketch the design of the less demanding subsequent sections that we are now constructing

  20. High Power Diode Lasers with External Feedback: Overview and Prospects

    Chi, Mingjun; Petersen, Paul Michael

    2012-01-01

    In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...... with a good beam quality. Tapered diode laser systems with external-cavity feedback around 800 and 1060 nm can deliver more than 2 W output power with diffraction-limited beam quality and can be operated in single-longitudinal mode. These high-brightness, narrow linewidth, and tunable external-cavity diode...... lasers emerge as the next generation of compact lasers that have the potential of replacing conventional high power laser systems in many existing applications....

  1. Very low pressure high power impulse triggered magnetron sputtering

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  2. High power electron beam accelerators for gas laser excitation

    Kelly, J.G.; Martin, T.H.; Halbleib, J.A.

    1976-06-01

    A preliminary parameter investigation has been used to determine a possible design of a high-power, relativistic electron beam, transversely excited laser. Based on considerations of present and developing pulsed power technology, broad area diode physics and projected laser requirements, an exciter is proposed consisting of a Marx generator, pulse shaping transmission lines, radially converging ring diodes and a laser chamber. The accelerator should be able to deliver approximately 20 kJ of electron energy at 1 MeV to the 10 4 cm 2 cylindrical surface of a laser chamber 1 m long and 0.3 m in diameter in 24 ns with very small azimuthal asymmetry and uniform radial deposition

  3. Coherent beam combining architectures for high power tapered laser arrays

    Schimmel, G.; Janicot, S.; Hanna, M.; Decker, J.; Crump, P.; Erbert, G.; Witte, U.; Traub, M.; Georges, P.; Lucas-Leclin, G.

    2017-02-01

    Coherent beam combining (CBC) aims at increasing the spatial brightness of lasers. It consists in maintaining a constant phase relationship between different emitters, in order to combine them constructively in one single beam. We have investigated the CBC of an array of five individually-addressable high-power tapered laser diodes at λ = 976 nm, in two architectures: the first one utilizes the self-organization of the lasers in an interferometric extended-cavity, which ensures their mutual coherence; the second one relies on the injection of the emitters by a single-frequency laser diode. In both cases, the coherent combining of the phase-locked beams is ensured on the front side of the array by a transmission diffractive grating with 98% efficiency. The passive phase-locking of the laser bar is obtained up to 5 A (per emitter). An optimization algorithm is implemented to find the proper currents in the five ridge sections that ensured the maximum combined power on the front side. Under these conditions we achieve a maximum combined power of 7.5 W. In the active MOPA configuration, we can increase the currents in the tapered sections up to 6 A and get a combined power of 11.5 W, corresponding to a combining efficiency of 76%. It is limited by the beam quality of the tapered emitters and by fast phase fluctuations between emitters. Still, these results confirm the potential of CBC approaches with tapered lasers to provide a high-power and high-brightness beam, and compare with the current state-of-the-art with laser diodes.

  4. New generation of compact high power disk lasers

    Feuchtenbeiner, Stefanie; Zaske, Sebastian; Schad, Sven-Silvius; Gottwald, Tina; Kuhn, Vincent; Kumkar, Sören; Metzger, Bernd; Killi, Alexander; Haug, Patrick; Speker, Nicolai

    2018-02-01

    New technological developments in high power disk lasers emitting at 1030 nm are presented. These include the latest generation of TRUMPF's TruDisk product line offering high power disk lasers with up to 6 kW output power and beam qualities of up to 4 mm*mrad. With these compact devices a footprint reduction of 50% compared to the previous model could be achieved while at the same time improving robustness and increasing system efficiency. In the context of Industry 4.0, the new generation of TruDisk lasers features a synchronized data recording of all sensors, offering high-quality data for virtual analyses. The lasers therefore provide optimal hardware requirements for services like Condition Monitoring and Predictive Maintenance. We will also discuss its innovative and space-saving cooling architecture. It allows operation of the laser under very critical ambient conditions. Furthermore, an outlook on extending the new disk laser platform to higher power levels will be given. We will present a disk laser with 8 kW laser power out of a single disk with a beam quality of 5 mm*mrad using a 125 μm fiber, which makes it ideally suited for cutting and welding applications. The flexibility of the disk laser platform also enables the realization of a wide variety of beam guiding setups. As an example a new scheme called BrightLine Weld will be discussed. This technology allows for an almost spatter free laser welding process, even at high feed rates.

  5. High-power ultrasonic treatment of contaminated soils and sediments

    Collings, A.F.; Gwan, P.B.; Sosa Pintos, A.P.

    2004-01-01

    Full text: The propagation of high-power ultrasound through a liquid can initiate the phenomenon of cavitation. This occurs with the collapse of gas bubbles formed during the rarefaction phase of the ultrasonic wave either from the dissolution of air or vaporisation of the liquid. Bubble collapse can generate localised temperatures up to 5,000 K and pressures up to 1,000 atmospheres. Solid particles in slurry have been shown to act as foci for the nucleation and collapse of bubbles. Theory and experiment have confirmed that the rupture of a bubble on a solid surface generates a high speed jet directed towards the surface. In this case, the extreme conditions generated by the non-linear shock wave produced by bubble collapse are localised on the solid surface. Since Persistent Organic Pollutants (POPs) are hydrophobic and are also readily absorbed on the surface of soil particles, the energy released by cavitation in a soil or sediment slurry is selectively directed towards them. The temperatures are sufficient to decompose these molecules. However, the extreme conditions are highly localised and the bulk solution temperature is essentially unaffected. Any decomposition products are immediately quenched and recombination reactions are avoided. Recent advances in ultrasound technology have produced commercial equipment capable of high power which has enabled us to remediate soils and sediments containing Organochlorine Pesticides (OCPs), Polyaromatic Hydrocarbons (PAHs) and Polychlorinated Biphenyls (PCBs). With reductions greater than 80% within minutes, this technique shows great promise with advantages of on-site treatment and reduced operating and capital costs compared with conventional methods

  6. Thermionic integrated circuit technology for high power space applications

    Yadavalli, S.R.

    1984-01-01

    Thermionic triode and integrated circuit technology is in its infancy and it is emerging. The Thermionic triode can operate at relatively high voltages (up to 2000V) and at least tens of amperes. These devices, including their use in integrated circuitry, operate at high temperatures (800 0 C) and are very tolerant to nuclear and other radiations. These properties can be very useful in large space power applications such as that represented by the SP-100 system which uses a nuclear reactor. This paper presents an assessment of the application of thermionic integrated circuitry with space nuclear power system technology. A comparison is made with conventional semiconductor circuitry considering a dissipative shunt regulator for SP-100 type nuclear power system rated at 100 kW. The particular advantages of thermionic circuitry are significant reductions in size and mass of heat dissipation and radiation shield subsystems

  7. A high power ZnO thin film piezoelectric generator

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  8. Method of doping a semiconductor

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  9. GaN-based High Power High Frequency Wide Range LLC Resonant Converter, Phase I

    National Aeronautics and Space Administration — SET Group will design, build and demonstrate a Gallium Nitride (GaN) based High Power High Frequency Wide Range LLC Resonant Converter capable of handling high power...

  10. Fundamentals of semiconductor lasers

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  11. Coherent dynamics in semiconductors

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  12. Hydrogen in semiconductors II

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  13. Photoelectronic properties of semiconductors

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  14. Analysis and Design Considerations of a High-Power Density, Dual Air Gap, Axial-Field Brushless, Permanent Magnet Motor.

    Cho, Chahee Peter

    1995-01-01

    Until recently, brush dc motors have been the dominant drive system because they provide easily controlled motor speed over a wide range, rapid acceleration and deceleration, convenient control of position, and lower product cost. Despite these capabilities, the brush dc motor configuration does not satisfy the design requirements for the U.S. Navy's underwater propulsion applications. Technical advances in rare-earth permanent magnet materials, in high-power semiconductor transistor technology, and in various rotor position-sensing devices have made using brushless permanent magnet motors a viable alternative. This research investigates brushless permanent magnet motor technology, studying the merits of dual-air gap, axial -field, brushless, permanent magnet motor configuration in terms of power density, efficiency, and noise/vibration levels. Because the design objectives for underwater motor applications include high-power density, high-performance, and low-noise/vibration, the traditional, simplified equivalent circuit analysis methods to assist in meeting these goals were inadequate. This study presents the development and verification of detailed finite element analysis (FEA) models and lumped parameter circuit models that can calculate back electromotive force waveforms, inductance, cogging torque, energized torque, and eddy current power losses. It is the first thorough quantification of dual air-gap, axial -field, brushless, permanent magnet motor parameters and performance characteristics. The new methodology introduced in this research not only facilitates the design process of an axial field, brushless, permanent magnet motor but reinforces the idea that the high-power density, high-efficiency, and low-noise/vibration motor is attainable.

  15. Chaos in high-power high-frequency gyrotrons

    Airila, M.

    2004-01-01

    Gyrotron interaction is a complex nonlinear dynamical process, which may turn chaotic in certain circumstances. The emergence of chaos renders dynamical systems unpredictable and causes bandwidth broadening of signals. Such effects would jeopardize the prospect of advanced gyrotrons in fusion. Therefore, it is important to be aware of the possibility of chaos in gyrotrons. There are three different chaos scenarios closely related to the development of high-power gyrotrons: First, the onset of chaos in electron trajectories would lead to difficulties in the design and efficient operation of depressed potential collectors, which are used for efficiency enhancement. Second, the radio-frequency signal could turn chaotic, decreasing the output power and the spectral purity of the output signal. As a result, mode conversion, transmission, and absorption efficiencies would be reduced. Third, spatio-temporal chaos in the resonator field structure can set a limit for the use of large-diameter interaction cavities and high-order TE modes (large azimuthal index) allowing higher generated power. In this thesis, the issues above are addressed with numerical modeling. It is found that chaos in electron residual energies is practically absent in the parameter region corresponding to high efficiency. Accordingly, depressed collectors are a feasible solution also in advanced high-power gyrotrons. A new method is presented for straightforward numerical solution of the one-dimensional self-consistent time-dependent gyrotron equations, and the method is generalized to two dimensions. In 1D, a chart of gyrotron oscillations is calculated. It is shown that the regions of stationary oscillations, automodulation, and chaos have a complicated topology in the plane of generalized gyrotron variables. The threshold current for chaotic oscillations exceeds typical operating currents by a factor of ten. However, reflection of the output signal may significantly lower the threshold. 2D

  16. DOE HIGH-POWER SLIM-HOLE DRILLING SYSTEM

    Dr. William C. Maurer; John H. Cohen; J. Chris Hetmaniak; Curtis Leitko

    1999-09-01

    This project used a systems approach to improve slim-hole drilling performance. A high power mud motor, having a double-length power section, and hybrid PDC/TSP drill bit were developed to deliver maximum horsepower to the rock while providing a long life down hole. This high-power slim-hole drilling system drills much faster than conventional slim-hole motor and bit combinations and holds significant potential to reduce slim-hole drilling costs. The oil and gas industries have been faced with downward price pressures since the 1980s. These pressures are not expected to be relieved in the near future. To maintain profitability, companies have had to find ways to reduce the costs of producing oil and gas. Drilling is one of the more costly operations in the production process. One method to reduce costs of drilling is to use smaller more mobile equipment. Slim holes have been drilled in the past using this principle. These wells can save money not only from the use of smaller drilling equipment, but also from reduced tubular costs. Stepping down even one casing size results in significant savings. However, slim holes have not found wide spread use for three reasons. First, until recently, the price of oil has been high so there were no forces to move the industry in this direction. Second, small roller bits and motors were not very reliable and they drilled slowly, removing much of the economic benefit. The third and final reason was the misconception that large holes were needed everywhere to deliver the desired production. Several factors have changed that will encourage the use of slim holes. The industry now favors any method of reducing the costs of producing oil and gas. In addition, the industry now understands that large holes are not always needed. Gas, in particular, can have high production rates in smaller holes. New materials now make it possible to manufacture improved bits and motors that drill for long periods at high rates. All that remains is to

  17. Advances in semiconductor lasers

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  18. Superconductivity in doped semiconductors

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  19. Semiconductor opto-electronics

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  20. Ternary chalcopyrite semiconductors

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  1. Compound semiconductor device physics

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  2. Introductory semiconductor device physics

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  3. Control system for high power laser drilling workover and completion unit

    Zediker, Mark S; Makki, Siamak; Faircloth, Brian O; DeWitt, Ronald A; Allen, Erik C; Underwood, Lance D

    2015-05-12

    A control and monitoring system controls and monitors a high power laser system for performing high power laser operations. The control and monitoring system is configured to perform high power laser operation on, and in, remote and difficult to access locations.

  4. Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2012-01-01

    knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

  5. Tunable radiation emitting semiconductor device

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  6. Low prepulse, high power density water dielectric switching

    Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

    1979-01-01

    Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

  7. Soft apertures to shape high-power laser beams

    Lukishova, S.G.; Pashinin, P.P.; Batygov, S.K.; Terentiev, B.M.

    1989-01-01

    Soft or apodized apertures with smooth decreasing from center to edges transmission profiles are used in laser physics for beam shaping. This paper gives the results of the studies of four types of these units for UV, visible and IR lasers. They are made of glasses or crystals with the use of one of the following technologies: absorption induced by ionizing radiation; photodestruction of color centers or photooxidation of impurities ions; additive coloration; frustrated total internal reflection. The special feature of such apertures is their high optical damage resistance under the irradiation of single-pulse laser radiation. They are approximately 3-50 mm in diameter by the methods of making them give the possibility to create near-Gaussian and flat-top beams with dimensions less than 1 mm and larger than 200 mm. The results of using them in high-power single-pulse lasers are presented. Damage thresholds of these apertures in such types of lasers have been defined

  8. The thermal management of high power light emitting diodes

    Hsu, Ming-Seng; Huang, Jen-Wei; Shyu, Feng-Lin

    2012-10-01

    Thermal management had an important influence not only in the life time but also in the efficiency of high power light emitting diodes (HPLEDs). 30 watts in a single package have become standard to the industrial fabricating of HPLEDs. In this study, we fabricated both of the AlN porous films, by vacuum sputtering, soldered onto the HPLEDs lamp to enhance both of the heat transfer and heat dissipation. In our model, the ceramic enables transfer the heat from electric device to the aluminum plate quickly and the porous increase the quality of the thermal dissipation between the PCB and aluminum plate, as compared to the industrial processing. The ceramic films were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray diffraction (XRD) diagram analysis reveals those ceramic phases were successfully grown onto the individual substrates. The morphology of ceramic films was investigated by the atomic force microscopy (AFM). The results show those porous films have high thermal conduction to the purpose. At the same time, they had transferred heat and limited work temperature, about 70°, of HPLEDs successfully.

  9. Plasma characteristics of a high power helicon discharge

    Ziemba, T; Euripides, P; Slough, J; Winglee, R; Giersch, L; Carscadden, J; Schnackenberg, T; Isley, S

    2006-01-01

    A new high power helicon (HPH) plasma system has been designed to provide input powers of several tens of kilowatts to produce a large area (0.5 m 2 ) of uniform high-density, of at least 5 x 10 17 m -3 , plasma downstream from the helicon coil. Axial and radial plasma characteristics show that the plasma is to a lesser extent created in and near the helicon coil and then is accelerated into the axial and equatorial regions. The bulk acceleration of the plasma is believed to be due to a coupling of the bulk of the electrons to the helicon field, which in turn transfers energy to the ions via ambipolar diffusion. The plasma beta is near unity a few centimetres away from the HPH system and Bdot measurements show ΔB perturbations in the order of the vacuum magnetic field magnitude. In the equatorial region, a magnetic separatrix is seen to develop roughly at the mid-point between the helicon and chamber wall. The magnetic perturbation develops on the time scale of the plasma flow speed and upon the plasma reaching the chamber wall decays to the vacuum magnetic field configuration within 200 μs

  10. Plasma characteristics of a high power helicon discharge

    Ziemba, T; Euripides, P; Slough, J; Winglee, R; Giersch, L; Carscadden, J; Schnackenberg, T; Isley, S [Box 351310, University of Washington, Seattle WA, 98195 (United States)

    2006-08-01

    A new high power helicon (HPH) plasma system has been designed to provide input powers of several tens of kilowatts to produce a large area (0.5 m{sup 2}) of uniform high-density, of at least 5 x 10{sup 17} m{sup -3}, plasma downstream from the helicon coil. Axial and radial plasma characteristics show that the plasma is to a lesser extent created in and near the helicon coil and then is accelerated into the axial and equatorial regions. The bulk acceleration of the plasma is believed to be due to a coupling of the bulk of the electrons to the helicon field, which in turn transfers energy to the ions via ambipolar diffusion. The plasma beta is near unity a few centimetres away from the HPH system and Bdot measurements show {delta}B perturbations in the order of the vacuum magnetic field magnitude. In the equatorial region, a magnetic separatrix is seen to develop roughly at the mid-point between the helicon and chamber wall. The magnetic perturbation develops on the time scale of the plasma flow speed and upon the plasma reaching the chamber wall decays to the vacuum magnetic field configuration within 200 {mu}s.

  11. Fusion reactor development using high power particle beams

    Ohara, Y.

    1990-01-01

    The present paper outlines major applications of the ion source/accelerator to fusion research and also addresses the present status and future plans for accelerator development. Applications of ion sources/accelerators for fusion research are discussed first, focusing on plasma heating, plasma current drive, plasma current profile control, and plasma diagnostics. The present status and future plan of ion sources/accelerators development are then described focusing on the features of existing and future tokamak equipment. Positive-ion-based NBI systems of 100 keV class have contributed to obtaining high temperature plasmas whose parameters are close to the fusion break-even condition. For the next tokamak fusion devices, a MeV class high power neutral beam injector, which will be used to obtain a steady state burning plasma, is considered to become the primary heating and current drive system. Development of such a system is a key to realize nuclear fusion reactor. It will be entirely indebted to the development of a MeV class high current negative deuterium ion source/accelerator. (N.K.)

  12. Glycol-Substitute for High Power RF Water Loads

    Ebert, Michael

    2005-01-01

    In water loads for high power rf applications, power is dissipated directly into the coolant. Loads for frequencies below approx. 1GHz are ordinarily using an ethylene glycol-water mixture as coolant. The rf systems at DESY utilize about 100 glycol water loads with powers ranging up to 600kW. Due to the increased ecological awareness, the use of glycol is now considered to be problematic. In EU it is forbidden to discharge glycol into the waste water system. In case of cooling system leakages one has to make sure that no glycol is lost. Since it is nearly impossible to avoid any glycol loss in large rf systems, a glycol-substitute was searched for and found. The found sodium-molybdate based substitute is actually a additive for corrosion protection in water systems. Sodium-molybdate is ecologically harmless; for instance, it is also used as fertilizer in agriculture. A homoeopathic dose of 0.4% mixed into deionised water gives better rf absorption characteristics than a 30% glycol mixture. The rf coolant feat...

  13. Radiological Environmental Protection for LCLS-II High Power Operation

    Liu James

    2017-01-01

    Full Text Available The LCLS-II superconducting electron accelerator at SLAC plans to operate at up to 4 GeV and 240 kW average power, which would create higher radiological impacts particularly near the beam loss points such as beam dumps and halo collimators. The main hazards to the public and environment include direct or skyshine radiation, effluent of radioactive air such as 13N, 15O and 41Ar, and activation of groundwater creating tritium. These hazards were evaluated using analytic methods and FLUKA Monte Carlo code. The controls (mainly extensive bulk shielding and local shielding around high loss points and monitoring (neutron/photon detectors with detection capabilities below natural background at site boundary, site-wide radioactive air monitors, and groundwater wells were designed to meet the U.S. DOE and EPA, as well as SLAC requirements. The radiological design and controls for the LCW systems [including concrete housing shielding for 15O and 11C circulating in LCW, 7Be and erosion/corrosion products (22Na, 54Mn, 60Co, 65Zn, etc. captured in resin and filters, leak detection and containment of LCW with 3H and its waste water discharge; explosion from H2 build-up in surge tank and release of radionuclides] associated with the high power beam dumps are also presented.

  14. High power beam profile monitor with optical transition radiation

    Denard, J.C.; Piot, P.; Capek, K.; Feldl, E.

    1997-01-01

    A simple monitor has been built to measure the profile of the high power beam (800 kW) delivered by the CEBAF accelerator at Jefferson Lab. The monitor uses the optical part of the forward transition radiation emitted from a thin carbon foil. The small beam size to be measured, about 100 μm, is challenging not only for the power density involved but also for the resolution the instrument must achieve. An important part of the beam instrumentation community believes the radiation being emitted into a cone of characteristic angle 1/γ is originated from a region of transverse dimension roughly λγ; thus the apparent size of the source of transition radiation would become very large for highly relativistic particles. This monitor measures 100 μm beam sizes that are much smaller than the 3.2 mm λγ limit; it confirms the statement of Rule and Fiorito that optical transition radiation can be used to image small beams at high energy. The present paper describes the instrument and its performance. The authors tested the foil in, up to 180 μA of CW beam without causing noticeable beam loss, even at 800 MeV, the lowest CEBAF energy

  15. A high power lithium thionyl chloride battery for space applications

    Shah, Pinakin M.

    1993-03-01

    A high power, 28 V, 330 A h, active lithium thionyl chloride battery has been developed for use as main and payload power sources on an expendable launch vehicle. Nine prismatic cells, along with the required electrical components and a built-in heater system, are efficiently packaged resulting in significant weight savings over presently used silver-zinc batteries. The high rate capability is achieved by designing the cells with a large electrochemical surface area and impregnating an electrocatalyst, polymeric phthalocyanine, into the carbon cathodes. Passivation effects are reduced with the addition of sulfur dioxide into the thionyl chloride electrolyte solution. The results of conducting a detailed thermal analysis are utilized to establish the heater design parameters and the thermal insulation requirements of the battery. An analysis of cell internal pressure and vent characteristics clearly illustrates the margins of safety under different operating conditions. Performance of fresh cells is discussed using polarization scan and discharge data at different rates and temperatures. Self-discharge rate is estimated based upon test results on cells after storage. Results of testing a complete prototype battery are described.

  16. A high power lithium thionyl chloride battery for space applications

    Shah, P.M. (Alliant Techsystems, Inc., Power Sources Center, Horsham, PA (United States))

    1993-03-15

    A high power, 28 V, 330 A h, active lithium thinoyl chloride battery has been developed for use as main and payload power sources on an expendable launch vehicle. Nine prismatic cells, along with the required electrical components and a built-in heater system, are efficiently packaged resulting in significant weight savings (>40%) over presently used silver-zinc batteries. The high rate capability is achieved by designing the cells with a large electrochemical surface area and impregnating an electrocatalyst, polymeric phthalocyanine, (CoPC)[sub n], into the carbon cathodes. Passivation effects are reduced with the addition of sulfur dioxide into the thionyl chloride electrolyte solution. The results of conducting a detailed thermal analysis are utilized to establish the heater design parameters and the thermal insulation requirements of the battery. An analysis of cell internal pressure and vent characteristics clearly illustrates the margins of safety under different operating conditions. Performance of fresh cells is discussed using polarization scan and discharge data at different rates and temperatures. Self-discharge rate is estimated based upon test results on cells after storage. Finally, the results of testing a complete prototype battery are described in detail. (orig.)

  17. A high power, tunable free electron maser for fusion

    Urbanus, W.H.; Bratman, V.L.; Bongers, W.A.; Caplan, M.; Denisov, G.G.; Geer, C.A.J. van der; Manintveld, P.; Militsyn, B.; Oomens, A.A.M.; Poelman, A.J.; Plomp, J.; Pluygers, J.; Savilov, A.V.; Smeets, P.H.M.; Sterk, A.B.; Verhoeven, A.G.A

    2001-01-01

    The Fusion-FEM experiment, a high-power, electrostatic free-electron maser being built at the FOM-Institute for Plasma Physics 'Rijnhuizen', is operated at various frequencies. So far, experiments were done without a depressed collector, and the pulse length was limited to 12 {mu}s. Nevertheless, many aspects of generation of mm-wave power have been explored, such as the dependency on the electron beam energy and beam current, and cavity settings such as the feedback coefficient. An output power of 730 kW at 206 GHz is generated with a 7.2 A, 1.77 MeV electron beam, and 360 kW at 167 GHz is generated with a 7.4 A, 1.61 MeV electron beam. It is shown experimentally and by simulations that, depending on the electron beam energy, the FEM can operate in single-frequency regime. The next step of the FEM experiment is to reach a pulse length of 100 ms. The major part of the beam line, the high voltage systems, and the collector have been completed. The undulator and mm-wave cavity are now at high voltage (2 MV). The new mm-wave transmission line, which transports the mm-wave output power from the high-voltage terminal to ground and outside the pressure tank, has been tested at low power.

  18. Radiological Environmental Protection for LCLS-II High Power Operation

    Liu, James; Blaha, Jan; Cimeno, Maranda; Mao, Stan; Nicolas, Ludovic; Rokni, Sayed; Santana, Mario; Tran, Henry

    2017-09-01

    The LCLS-II superconducting electron accelerator at SLAC plans to operate at up to 4 GeV and 240 kW average power, which would create higher radiological impacts particularly near the beam loss points such as beam dumps and halo collimators. The main hazards to the public and environment include direct or skyshine radiation, effluent of radioactive air such as 13N, 15O and 41Ar, and activation of groundwater creating tritium. These hazards were evaluated using analytic methods and FLUKA Monte Carlo code. The controls (mainly extensive bulk shielding and local shielding around high loss points) and monitoring (neutron/photon detectors with detection capabilities below natural background at site boundary, site-wide radioactive air monitors, and groundwater wells) were designed to meet the U.S. DOE and EPA, as well as SLAC requirements. The radiological design and controls for the LCW systems [including concrete housing shielding for 15O and 11C circulating in LCW, 7Be and erosion/corrosion products (22Na, 54Mn, 60Co, 65Zn, etc.) captured in resin and filters, leak detection and containment of LCW with 3H and its waste water discharge; explosion from H2 build-up in surge tank and release of radionuclides] associated with the high power beam dumps are also presented.

  19. Modeling of mode purity in high power gyrotrons

    Cai, S.Y.; Antonsen, T.M. Jr.; Saraph, G.P.

    1993-01-01

    Spurious mode generation at the same frequency of the operational mode in a high power gyrotron can significantly reduce the power handling capability and the stability of a gyrotron oscillator because these modes are usually not matched at the output window and thus have high absorption and reflection rates. To study the generation of this kind of mode, the authors developed a numerical model based on an existing multimode self-consistent time-dependent computer code. This model includes both TE and TM modes and accounts for mode transformations due to the waveguide inhomogeneity. With this new tool, they study the mode transformation in the gyrotron and the possibility of excitation of parasitic TE and TM modes in the up taper section due to the gyroklystron mechanism. Their preliminary results show moderate excitation of both TE and TM modes at the same frequency as the main operating mode at locations near their cutoff. Details of the model and further simulation results will be presented

  20. Recent progress in high-power slab lasers in Japan

    Fujii, Y.

    1988-01-01

    Recently, many solid-state lasers have been widely employed in Japanese industries, especially in the electronics industries for precise and reliable processing. To expand the use of solid-state lasers and to achieve higher processing speed, the authors are developing slab lasers of high power, high repetition rate, and high beam quality. Metal processing systems with optical fibers for large and complex 3-D work, multiwork station systems linked to only one laser with optical fibers, and compact x-ray sources for lithography are promising areas for such lasers. Surnitomo Metal Mining is growing Nd:GGG and Nd:YAG crystals 60 mm in diameter and 200 mm long. From 2 at.% Nd-doped GGG crystals without central core regions. The authors obtained two slab materials with dimensions of 35 X 9 X 192 and 55 X 15 X 213 mm/sup 3/. By using the smaller slab, they constructed a slab laser and obtained 370-W laser output power at 24-kW lamp input power and 10-pps repetition rate. Now they are constructing a 1-kW slab laser using the other larger size slab

  1. Fast SMES for generation of high power pulses

    Juengst, K.P.; Salbert, H.

    1996-01-01

    A technique for generation of high power pulses based on a fast SMES has been developed and a model of a power modulator for linear accelerators was built. The basic function of the modulator that generates 2 ms long, approximately 1 MW power pulses at a repetition rate of 10 Hz is described in this paper. A modular construction of the SMES that consists of up to six coils has been chosen to meet the demands of several applications in high energy physics and energy distribution. The rate of change of magnetic field achieved during ramping of the magnet was more than 60 T/s without a quench. The magnet was designed with respect to the high AC losses during repetitive ramping of the SMES. The suitability of mixed matrix superconductors instead of more expensive net frequency wires for this kind of AC stress was investigated. The applied mixed matrix Cu/CuNi/NbTi wire and the construction of a single coil is described

  2. LCLS-II high power RF system overview and progress

    Yeremian, Anahid Dian

    2015-10-07

    A second X-ray free electron laser facility, LCLS-II, will be constructed at SLAC. LCLS-II is based on a 1.3 GHz, 4 GeV, continuous-wave (CW) superconducting linear accelerator, to be installed in the first kilometer of the SLAC tunnel. Multiple types of high power RF (HPRF) sources will be used to power different systems on LCLS-II. The main 1.3 GHz linac will be powered by 280 1.3 GHz, 3.8 kW solid state amplifier (SSA) sources. The normal conducting buncher in the injector will use four more SSAs identical to the linac SSAs but run at 2 kW. Two 185.7 MHz, 60 kW sources will power the photocathode dual-feed RF gun. A third harmonic linac section, included for linearizing the bunch energy spread before the first bunch compressor, will require sixteen 3.9 GHz sources at about 1 kW CW. A description and an update on all the HPRF sources of LCLS-II and their implementation is the subject of this paper.

  3. Advanced, High Power, Next Scale, Wave Energy Conversion Device

    Mekhiche, Mike [Principal Investigator; Dufera, Hiz [Project Manager; Montagna, Deb [Business Point of Contact

    2012-10-29

    The project conducted under DOE contract DE‐EE0002649 is defined as the Advanced, High Power, Next Scale, Wave Energy Converter. The overall project is split into a seven‐stage, gated development program. The work conducted under the DOE contract is OPT Stage Gate III work and a portion of Stage Gate IV work of the seven stage product development process. The project effort includes Full Concept Design & Prototype Assembly Testing building on our existing PowerBuoy technology to deliver a device with much increased power delivery. Scaling‐up from 150kW to 500kW power generating capacity required changes in the PowerBuoy design that addressed cost reduction and mass manufacturing by implementing a Design for Manufacturing (DFM) approach. The design changes also focused on reducing PowerBuoy Installation, Operation and Maintenance (IO&M) costs which are essential to reducing the overall cost of energy. In this design, changes to the core PowerBuoy technology were implemented to increase capability and reduce both CAPEX and OPEX costs. OPT conceptually envisaged moving from a floating structure to a seabed structure. The design change from a floating structure to seabed structure would provide the implementation of stroke‐ unlimited Power Take‐Off (PTO) which has a potential to provide significant power delivery improvement and transform the wave energy industry if proven feasible.

  4. UNIPIC code for simulations of high power microwave devices

    Wang Jianguo; Zhang Dianhui; Wang Yue; Qiao Hailiang; Li Xiaoze; Liu Chunliang; Li Yongdong; Wang Hongguang

    2009-01-01

    In this paper, UNIPIC code, a new member in the family of fully electromagnetic particle-in-cell (PIC) codes for simulations of high power microwave (HPM) generation, is introduced. In the UNIPIC code, the electromagnetic fields are updated using the second-order, finite-difference time-domain (FDTD) method, and the particles are moved using the relativistic Newton-Lorentz force equation. The convolutional perfectly matched layer method is used to truncate the open boundaries of HPM devices. To model curved surfaces and avoid the time step reduction in the conformal-path FDTD method, CP weakly conditional-stable FDTD (WCS FDTD) method which combines the WCS FDTD and CP-FDTD methods, is implemented. UNIPIC is two-and-a-half dimensional, is written in the object-oriented C++ language, and can be run on a variety of platforms including WINDOWS, LINUX, and UNIX. Users can use the graphical user's interface to create the geometric structures of the simulated HPM devices, or input the old structures created before. Numerical experiments on some typical HPM devices by using the UNIPIC code are given. The results are compared to those obtained from some well-known PIC codes, which agree well with each other.

  5. Target experiments with high-power proton beams

    Baumung, K; Bluhm, H; Hoppe, P; Rusch, D; Singer, J; Stoltz, O [Forschungszentrum Karlsruhe (Germany); Kanel, G I; Razorenov, S V; Utkin, A V [Russian Academy of Sciences, Chernogolovka (Russian Federation). Inst. of Chemical Physics

    1997-12-31

    At the Karlsruhe Light Ion Facility KALE a pulsed high-power proton beam (50 ns, 0.15 TW/cm{sup 2}, 8 mm fwhm focus diameter, 1.7 MeV peak proton energy) is used to generate short, intense pressure pulses or to ablatively accelerate targets 10-100 {mu}m thick to velocities > 10 km/s. The velocity history of the rear target surface is recorded by line-imaging laser Doppler velocimetry with high spatial ({>=} 10 {mu}m) and temporal ({>=} 200 ps) resolution, and provides information on proton beam parameters, and on the state of the matter at high energy densities and intense loading. Utilizing the bell-shaped power density profile the authors demonstrated a new straightforward method for measuring the shock pressure that leads to material melting in the rarefaction wave. For the first time, the dynamic tensile strength was measured across a crystal grain boundary, and using targets with a 1D periodic structure, the growth rate of a Rayleigh Taylor instability could be measured for the first time in direct drive experiments with an ion beam. (author). 8 figs., 15 refs.

  6. Engineering safety features for high power experimental reactors

    Doval, A.; Villarino, E.; Vertullo, A.

    2000-01-01

    In the present analysis we will focus our attention in the way engineering safety features are designed in order to prevent fuel damage in case of abnormal or accidental situations. To prevent fuel damage two main facts must be considered, the shutdown of the reactor and the adequate core cooling capacity, it means that both, neutronic and thermohydraulic aspects must be analysed. Some neutronic safety features are common to all power ranges like negative feedback reactivity coefficients and the required number of control rods containing the proper absorber material to shutdown the reactor. From the thermohydraulic point of view common features are siphon-breaker devices and flap valves for those powers requiring cooling in the forced convection regime. For the high power reactor group, the engineering safety features specially designed for a generic reactor of 20 MW, will be presented here. From the neutronic point of view besides the common features, and to comply with our National Regulatory Authority, a Second Shutdown System was designed as a redundant shutdown system in case the control plates fail. Concerning thermohydraulic aspects besides the pump flywheels and the flap valves providing the natural convection loop, a metallic Chimney and a Chimney Water Injection System were supplied. (author)

  7. Fiber facet gratings for high power fiber lasers

    Vanek, Martin; Vanis, Jan; Baravets, Yauhen; Todorov, Filip; Ctyroky, Jiri; Honzatko, Pavel

    2017-12-01

    We numerically investigated the properties of diffraction gratings designated for fabrication on the facet of an optical fiber. The gratings are intended to be used in high-power fiber lasers as mirrors either with a low or high reflectivity. The modal reflectance of low reflectivity polarizing grating has a value close to 3% for TE mode while it is significantly suppressed for TM mode. Such a grating can be fabricated on laser output fiber facet. The polarizing grating with high modal reflectance is designed as a leaky-mode resonant diffraction grating. The grating can be etched in a thin layer of high index dielectric which is sputtered on fiber facet. We used refractive index of Ta2O5 for such a layer. We found that modal reflectance can be close to 0.95 for TE polarization and polarization extinction ratio achieves 18 dB. Rigorous coupled wave analysis was used for fast optimization of grating parameters while aperiodic rigorous coupled wave analysis, Fourier modal method and finite difference time domain method were compared and used to compute modal reflectance of designed gratings.

  8. Adaptive metal mirror for high-power CO2 lasers

    Jarosch, Uwe-Klaus

    1996-08-01

    Spherical mirrors with a variable radius of curvature are used inside laser resonators as well as in the beam path between the laser and the workpiece. Commercially-available systems use piezoelectric actuators, or the pressure of the coolant, to deform the mirror surface. In both cases, the actuator and the cooling system influence each other. This interaction is avoided through the integration of the cooling system with the flexible mirror membrane. A multi- channel design leads to an optimized cooling effect, which is necessary for high power applications. The contour of the variable metal mirror depends on the mounting between the membrane and the mirror body and on the distribution of forces. Four cases of deformation can be distinguished for a circular elastic membrane. The realization of an adaptive metal mirror requires a technical compromise to be made. A mechanical construction is presented which combines an elastic hinge with the inlet and outlet of the coolant. For the deformation of the mirror membranes two actuators with different character of deformation are used. The superposition of the two deformations results in smaller deviations from the spherical surface shape than can be achieved using a single actuator. DC proportional magnets have been introduced as cheap and rigid actuators. The use of this adaptive mirror, either in a low pressure atmosphere of a gas laser resonator, or in an extra-cavity beam path is made possible through the use of a ventilation system.

  9. High Power RF Test Facility at the SNS

    Kang, Yoon W; Campisi, Isidoro E; Champion, Mark; Crofford, Mark; Davis, Kirk; Drury, Michael A; Fuja, Ray E; Gurd, Pamela; Kasemir, Kay-Uwe; McCarthy, Michael P; Powers, Tom; Shajedul Hasan, S M; Stirbet, Mircea; Stout, Daniel; Tang, Johnny Y; Vassioutchenko, Alexandre V; Wezensky, Mark

    2005-01-01

    RF Test Facility has been completed in the SNS project at ORNL to support test and conditioning operation of RF subsystems and components. The system consists of two transmitters for two klystrons powered by a common high voltage pulsed converter modulator that can provide power to two independent RF systems. The waveguides are configured with WR2100 and WR1150 sizes for presently used frequencies: 402.5 MHz and 805 MHz. Both 402.5 MHz and 805 MHz systems have circulator protected klystrons that can be powered by the modulator capable of delivering 11 MW peak and 1 MW average power. The facility has been equipped with computer control for various RF processing and complete dual frequency operation. More than forty 805 MHz fundamental power couplers for the SNS superconducting linac (SCL) cavitites have been RF conditioned in this facility. The facility provides more than 1000 ft2 floor area for various test setups. The facility also has a shielded cave area that can support high power tests of normal conducti...

  10. Cutting and drilling studies using high power visible lasers

    Kautz, D.D.; Dragon, E.P.; Werve, M.E.; Hargrove, R.S.; Warner, B.E.

    1993-01-01

    High power and radiance laser technologies developed at Lawrence Livermore National Laboratory such as copper-vapor and dye lasers show great promise for material processing tasks. Evaluation of models suggests significant increases in welding, cutting, and drilling capabilities, as well as applications in emerging technologies such as micromachining, surface treatment, and stereolithography. Copper lasers currently operate at 1.8 kW output at approximately three times the diffraction limit and achieve mean time between failures of more than 1,000 hours. Dye lasers have near diffraction limited beam quality at greater than 1.0 kW. Results from cutting and drilling studies in titanium and stainless steel alloys show that cuts and holes with extremely fine features can be made with dye and copper-vapor lasers. High radiance beams produce low distortion and small heat-affected zones. The authors have accomplished very high aspect ratios (> 60:1) and features with micron scale (5-50 μm) sizes. The paper gives a description of the equipment; discusses cutting theory; and gives experimental results of cutting and drilling studies on Ti-6Al-4V and 304 stainless steel

  11. UNIPIC code for simulations of high power microwave devices

    Wang, Jianguo; Zhang, Dianhui; Liu, Chunliang; Li, Yongdong; Wang, Yue; Wang, Hongguang; Qiao, Hailiang; Li, Xiaoze

    2009-03-01

    In this paper, UNIPIC code, a new member in the family of fully electromagnetic particle-in-cell (PIC) codes for simulations of high power microwave (HPM) generation, is introduced. In the UNIPIC code, the electromagnetic fields are updated using the second-order, finite-difference time-domain (FDTD) method, and the particles are moved using the relativistic Newton-Lorentz force equation. The convolutional perfectly matched layer method is used to truncate the open boundaries of HPM devices. To model curved surfaces and avoid the time step reduction in the conformal-path FDTD method, CP weakly conditional-stable FDTD (WCS FDTD) method which combines the WCS FDTD and CP-FDTD methods, is implemented. UNIPIC is two-and-a-half dimensional, is written in the object-oriented C++ language, and can be run on a variety of platforms including WINDOWS, LINUX, and UNIX. Users can use the graphical user's interface to create the geometric structures of the simulated HPM devices, or input the old structures created before. Numerical experiments on some typical HPM devices by using the UNIPIC code are given. The results are compared to those obtained from some well-known PIC codes, which agree well with each other.

  12. Development of Faraday rotators for high power glass laser systems

    Yoshida, Kunio; Kato, Yoshiaki; Yamanaka, Chiyoe.

    1980-01-01

    As a new approach to nuclear fusion, laser-induced fusion has been recently highlighted. It is no exaggeration to say that the future success of this technique depends on the development of high power laser as the energy driver. Faraday rotators are used as photo-diodes to prevent amplifiers and oscillator assemblies from the possibility to be broken by reversely transmitting light. The authors were able to increase the isolation ratio by about 10 times as compared with conventional one by employing the large performance index, disc type Faraday glass, FR-5. In this paper, first, Faraday glasses which are the composing element of Faraday rotators and the optical characteristics of dielectric thin-film polarizers are described, and next, the design of a magnetic coil and its resulting coil characteristics are reported. Then the dominant causes limiting the isolation ratio of Faraday rotators are investigated, and it is clarified that the residual strain in Faraday glasses and the non-uniformity of magnetic field affect predominantly. The measured results are as follows: The magnetic flux densities required to rotate by 45 deg the polarizing plane of the light transmitted through the Faraday rotators A and B are both 27 kG; and the isolation ratios over the whole effective plane are 36 and 32 dB, respectively. (Wakatsuki, Y.)

  13. Physical principles of semiconductor detectors

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  14. Metal semiconductor contacts and devices

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  15. Handbook of luminescent semiconductor materials

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  16. Reliability test and failure analysis of high power LED packages

    Chen Zhaohui; Zhang Qin; Wang Kai; Luo Xiaobing; Liu Sheng

    2011-01-01

    A new type application specific light emitting diode (LED) package (ASLP) with freeform polycarbonate lens for street lighting is developed, whose manufacturing processes are compatible with a typical LED packaging process. The reliability test methods and failure criterions from different vendors are reviewed and compared. It is found that test methods and failure criterions are quite different. The rapid reliability assessment standards are urgently needed for the LED industry. 85 0 C/85 RH with 700 mA is used to test our LED modules with three other vendors for 1000 h, showing no visible degradation in optical performance for our modules, with two other vendors showing significant degradation. Some failure analysis methods such as C-SAM, Nano X-ray CT and optical microscope are used for LED packages. Some failure mechanisms such as delaminations and cracks are detected in the LED packages after the accelerated reliability testing. The finite element simulation method is helpful for the failure analysis and design of the reliability of the LED packaging. One example is used to show one currently used module in industry is vulnerable and may not easily pass the harsh thermal cycle testing. (semiconductor devices)

  17. Depletion field focusing in semiconductors

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  18. Nonlinear Elasticity of Doped Semiconductors

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  19. Semi-conductor rectifiers

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  20. Semiconductor detector physics

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  1. A High-power Electric Propulsion Test Platform in Space

    Petro, Andrew J.; Reed, Brian; Chavers, D. Greg; Sarmiento, Charles; Cenci, Susanna; Lemmons, Neil

    2005-01-01

    This paper will describe the results of the preliminary phase of a NASA design study for a facility to test high-power electric propulsion systems in space. The results of this design study are intended to provide a firm foundation for subsequent detailed design and development activities leading to the deployment of a valuable space facility. The NASA Exploration Systems Mission Directorate is sponsoring this design project. A team from the NASA Johnson Space Center, Glenn Research Center, the Marshall Space Flight Center and the International Space Station Program Office is conducting the project. The test facility is intended for a broad range of users including government, industry and universities. International participation is encouraged. The objectives for human and robotic exploration of space can be accomplished affordably, safely and effectively with high-power electric propulsion systems. But, as thruster power levels rise to the hundreds of kilowatts and up to megawatts, their testing will pose stringent and expensive demands on existing Earth-based vacuum facilities. These considerations and the human access to near-Earth space provided by the International Space Station (ISS) have led to a renewed interest in space testing. The ISS could provide an excellent platform for a space-based test facility with the continuous vacuum conditions of the natural space environment and no chamber walls to modify the open boundary conditions of the propulsion system exhaust. The test platform could take advantage of the continuous vacuum conditions of the natural space environment. Space testing would provide open boundary conditions without walls, micro-gravity and a realistic thermal environment. Testing on the ISS would allow for direct observation of the test unit, exhaust plume and space-plasma interactions. When necessary, intervention by on-board personnel and post-test inspection would be possible. The ISS can provide electrical power, a location for

  2. Advanced laser architectures for high power eyesafe illuminators

    Baranova, N.; Pati, B.; Stebbins, K.; Bystryak, I.; Rayno, M.; Ezzo, K.; DePriest, C.

    2018-02-01

    Q-Peak has demonstrated a novel pulsed eyesafe laser architecture operating with >50 mJ pulse energies at Pulse Repetition Frequencies (PRFs) as high as 320 Hz. The design leverages an Optical Parametric Oscillator (OPO) and Optical Parametric Amplifier (OPA) geometry, which provides the unique capability for high power in a comparatively compact package, while also offering the potential for additional eyesafe power scaling. The laser consists of a Commercial Off-the-Shelf (COTS) Q-switched front-end seed laser to produce pulse-widths around 10 ns at 1.06-μm, which is then followed by a pair of Multi-Pass Amplifier (MPA) architectures (comprised of side-pumped, multi-pass Nd:YAG slabs with a compact diode-pump-array imaging system), and finally involving two sequential nonlinear optical conversion architectures for transfer into the eyesafe regime. The initial seed beam is first amplified through the MPA, and then split into parallel optical paths. An OPO provides effective nonlinear conversion on one optical path, while a second MPA further amplifies the 1.06-μm beam for use in pumping an OPA on the second optical path. These paths are then recombined prior to seeding the OPA. Each nonlinear conversion subsystem utilizes Potassium Titanyl Arsenate (KTA) for effective nonlinear conversion with lower risk to optical damage. This laser architecture efficiently produces pulse energies of >50 mJ in the eyesafe band at PRFs as high as 320 Hz, and has been designed to fit within a volume of 4,500 in3 (0.074 m3 ). We will discuss theoretical and experimental details of the nonlinear optical system for achieving higher eyesafe powers.

  3. High-power ultrasonic processing: Recent developments and prospective advances

    Gallego-Juarez, Juan A.

    2010-01-01

    also to be mentioned. The objective of this paper is to review some recent developments in ultrasonic processing to show the present situation and the prospective progresses of high-power ultrasonics as an innovative technology in many industrial sectors.

  4. Advanced cathode materials for high-power applications

    Amine, K.; Liu, J.; Belharouak, I.; Kang, S.-H.; Bloom, I.; Vissers, D.; Henriksen, G.

    In our efforts to develop low cost high-power Li-ion batteries with excellent safety, as well as long cycle and calendar life, lithium manganese oxide spinel and layered lithium nickel cobalt manganese oxide cathode materials were investigated. Our studies with the graphite/LiPF 6/spinel cells indicated a very significant degradation of capacity with cycling at 55 °C. This degradation was caused by the reduction of manganese ions on the graphite surface which resulted in a significant increase of the charge-transfer impedance at the anode/electrolyte interface. To improve the stability of the spinel, we investigated an alternative salt that would not generate HF acid that may attack the spinel. The alternative salt we selected for this work was lithium bisoxalatoborate, LiB(C 2O 4) 2 ("LiBoB"). In this case, the graphite/LiBoB/spinel Li-ion cells exhibited much improved cycle/calendar life at 55 °C and better abuse tolerance, as well as excellent power. A second system based on LiNi 1/3Co 1/3Mn 1/3O 2 layered material was also investigated and its performance was compared to commercial LiNi 0.8Co 0.15Al 0.05O 2. Cells based on LiNi 1/3Co 1/3Mn 1/3O 2 showed lower power fade and better thermal safety than the LiNi 0.8Co 0.15Al 0.05O 2-based commercial cells under similar test conditions. Li-ion cells based on the material with excess lithium (Li 1.1Ni 1/3Co 1/3Mn 1/3O 2) exhibited excellent power performance that exceeded the FreedomCAR requirements.

  5. Thermal design and analysis of high power star sensors

    Fan Jiang

    2015-09-01

    Full Text Available The requirement for the temperature stability is very high in the star sensors as the high precision needs for the altitude information. Thermal design and analysis thus is important for the high power star sensors and their supporters. CCD, normally with Peltier thermoelectric cooler (PTC, is the most important sensor component in the star sensors, which is also the main heat source in the star sensors suite. The major objective for the thermal design in this paper is to design a radiator to optimize the heat diffusion for CCD and PTC. The structural configuration of star sensors, the heat sources and orbit parameters were firstly introduced in this paper. The influences of the geometrical parameters and coating material characteristics of radiators on the heat diffusion were investigated by heat flux analysis. Carbon–carbon composites were then chosen to improve the thermal conductivity for the sensor supporters by studying the heat transfer path. The design is validated by simulation analysis and experiments on orbit. The satellite data show that the temperatures of three star sensors are from 17.8 °C to 19.6 °C, while the simulation results are from 18.1 °C to 20.1 °C. The temperatures of radiator are from 16.1 °C to 16.8 °C and the corresponding simulation results are from 16.0 °C to 16.5 °C. The temperature variety of each star sensor is less than 2 °C, which satisfies the design objectives.

  6. Multi-focus beam shaping of high power multimode lasers

    Laskin, Alexander; Volpp, Joerg; Laskin, Vadim; Ostrun, Aleksei

    2017-08-01

    Beam shaping of powerful multimode fiber lasers, fiber-coupled solid-state and diode lasers is of great importance for improvements of industrial laser applications. Welding, cladding with millimetre scale working spots benefit from "inverseGauss" intensity profiles; performance of thick metal sheet cutting, deep penetration welding can be enhanced when distributing the laser energy along the optical axis as more efficient usage of laser energy, higher edge quality and reduction of the heat affected zone can be achieved. Building of beam shaping optics for multimode lasers encounters physical limitations due to the low beam spatial coherence of multimode fiber-coupled lasers resulting in big Beam Parameter Products (BPP) or M² values. The laser radiation emerging from a multimode fiber presents a mixture of wavefronts. The fiber end can be considered as a light source which optical properties are intermediate between a Lambertian source and a single mode laser beam. Imaging of the fiber end, using a collimator and a focusing objective, is a robust and widely used beam delivery approach. Beam shaping solutions are suggested in form of optics combining fiber end imaging and geometrical separation of focused spots either perpendicular to or along the optical axis. Thus, energy of high power lasers is distributed among multiple foci. In order to provide reliable operation with multi-kW lasers and avoid damages the optics are designed as refractive elements with smooth optical surfaces. The paper presents descriptions of multi-focus optics as well as examples of intensity profile measurements of beam caustics and application results.

  7. High-power electronics thermal management with intermittent multijet sprays

    Panão, Miguel R.O.; Correia, André M.; Moreira, António L.N.

    2012-01-01

    Thermal management plays a crucial role in the development of high-power electronics devices, e.g. in electric vehicles. The greatest energy demands occur during power peaks, implying dynamic thermal losses within the vehicle’s driving cycle. Therefore, the need for devising intelligent thermal management systems able to efficiently respond to these power peaks has become a technological challenge. Experiments have been performed with methanol in order to quantify the maximum heat flux removed by a multijet spray to keep the 4 cm 2 surface temperature stabilized and below the threshold of 125 °C. A multijet atomization strategy consists in producing a spray through the multiple and simultaneous impact of N j cylindrical jets. Moreover, the spray intermittency is expressed through the duty cycle (DC), which depends on the frequency and duration of injection. Results evidence that: i) a shorter time between consecutive injection cycles enables a better distribution of the mass flow rate, resulting in larger heat transfer coefficient values, as well as higher cooling efficiencies; ii) compared with continuous sprays, the analysis evidences that an intermittent spray allows benefiting more from phase-change convection. Moreover, the mass flux is mainly affecting heat transfer rather than differences induced in the spray structure by using different multijet configurations. - Highlights: ► Intermittent spray cooling (ISC) is advantageous for intelligent thermal management. ► Distributing the mass flow rate through ISC improves heat transfer. ► Multijet sprays with increasing number of jets have higher heat transfer rates. ► ISC with multijet sprays benefit more from phase-change than continuous sprays.

  8. Electron Acceleration by High Power Radio Waves in the Ionosphere

    Bernhardt, Paul

    2012-10-01

    At the highest ERP of the High Altitude Auroral Research Program (HAARP) facility in Alaska, high frequency (HF) electromagnetic (EM) waves in the ionosphere produce artificial aurora and electron-ion plasma layers. Using HAARP, electrons are accelerated by high power electrostatic (ES) waves to energies >100 times the thermal temperature of the ambient plasma. These ES waves are driven by decay of the pump EM wave tuned to plasma resonances. The most efficient acceleration process occurs near the harmonics of the electron cyclotron frequency in earth's magnetic field. Mode conversion plays a role in transforming the ES waves into EM signals that are recorded with ground receivers. These diagnostic waves, called stimulated EM emissions (SEE), show unique resonant signatures of the strongest electron acceleration. This SEE also provides clues about the ES waves responsible for electron acceleration. The electron gas is accelerated by high frequency modes including Langmuir (electron plasma), upper hybrid, and electron Bernstein waves. All of these waves have been identified in the scattered EM spectra as downshifted sidebands of the EM pump frequency. Parametric decay is responsible low frequency companion modes such as ion acoustic, lower hybrid, and ion Bernstein waves. The temporal evolution of the scattered EM spectrum indicates development of field aligned irregularities that aid the mode conversion process. The onset of certain spectral features is strongly correlated with glow plasma discharge structures that are both visible with the unaided eye and detectable using radio backscatter techniques at HF and UHF frequencies. The primary goals are to understand natural plasma layers, to study basic plasma physics in a unique ``laboratory with walls,'' and to create artificial plasma structures that can aid radio communications.

  9. Predicting High-Power Performance in Professional Cyclists.

    Sanders, Dajo; Heijboer, Mathieu; Akubat, Ibrahim; Meijer, Kenneth; Hesselink, Matthijs K

    2017-03-01

    To assess if short-duration (5 to ~300 s) high-power performance can accurately be predicted using the anaerobic power reserve (APR) model in professional cyclists. Data from 4 professional cyclists from a World Tour cycling team were used. Using the maximal aerobic power, sprint peak power output, and an exponential constant describing the decrement in power over time, a power-duration relationship was established for each participant. To test the predictive accuracy of the model, several all-out field trials of different durations were performed by each cyclist. The power output achieved during the all-out trials was compared with the predicted power output by the APR model. The power output predicted by the model showed very large to nearly perfect correlations to the actual power output obtained during the all-out trials for each cyclist (r = .88 ± .21, .92 ± .17, .95 ± .13, and .97 ± .09). Power output during the all-out trials remained within an average of 6.6% (53 W) of the predicted power output by the model. This preliminary pilot study presents 4 case studies on the applicability of the APR model in professional cyclists using a field-based approach. The decrement in all-out performance during high-intensity exercise seems to conform to a general relationship with a single exponential-decay model describing the decrement in power vs increasing duration. These results are in line with previous studies using the APR model to predict performance during brief all-out trials. Future research should evaluate the APR model with a larger sample size of elite cyclists.

  10. Applications of OALCLV in the high power laser systems

    Huang, Dajie; Fan, Wei; Cheng, He; Wei, Hui; Wang, Jiangfeng; An, Honghai; Wang, Chao; Cheng, Yu; Xia, Gang; Li, Xuechun; Lin, Zunqi

    2017-10-01

    This paper introduces the recent development of our integrated optical addressed spatial light modulator and its applications in the high power laser systems. It can be used to convert the incident beam into uniform beam for high energy effiency, or it can realize special distribution to meet the requirements of physical experiment. The optical addressing method can avoid the problem of the black matrix effect of the electric addressing device. Its transmittance for 1053nm light is about 85% and the aperture of our device has reached 22mm× 22mm. As a transmissive device, it can be inserted into the system without affecting the original optical path. The applications of the device in the three laser systems are introduced in detail in this paper. In the SGII-Up laser facility, this device demonstrates its ability to shape the output laser beam of the fundamental frequency when the output energy reaches about 2000J. Meanwhile, there's no change in the time waveform and far field distribution. This means that it can effectively improve the capacity of the maximum output energy. In the 1J1Hz Nd-glass laser system, this device has been used to improve the uniformity of the output beam. As a result, the PV value reduces from 1.4 to 1.2, which means the beam quality has been improved effectively. In the 9th beam of SGII laser facility, the device has been used to meet the requirements of sampling the probe light. As the transmittance distribution of the laser beam can be adjusted, the sampling spot can be realized in real time. As a result, it's easy to make the sampled spot meet the requirements of physics experiment.

  11. Beam transport optics for high-power laser systems

    Taylor, J.R.

    1995-01-01

    Beam transport optics receive output energy from the laser cavity and deliver it to the work site. Depending on the application, this may require a few simple elements or large complex systems. Collection of the laser energy depends on the spatial and temporal energy distribution as well as the wavelength and polarization of the laser cavity and output coupler. Transport optics can perform a variety of functions, including beam formatting, frequency doubling, and distribution to one or more work sites while maintaining or even improving the beam quality. The beam may be delivered to work sites as focused spots or images, projected to distant targets, or propagated through various media for sensing or photochemical processing. Design may involve optical modeling of the system, including diffraction effects and thermal management. A Gaussian beam profile is often used for convenience in modeling. When deviations from this ideal profile need to be considered, it is necessary to characterize the laser beam in detail. Design of the transport system requires understanding of the interaction of the laser energy with optical materials and components. Practical considerations include mounting the optics without stress and with the stability suitable for the intended application. Requirements for beam direction, stability, size, shape, and quality dictate the design approach for each specific situation. Attention also must be given to reliability, environmental, and commercial requirements. Damage to optics in high-power laser systems is a common concern. Environmental problems such as atmospheric turbulence, contamination by dust or vapor from the work site or other sources, or absorption of water vapor can directly degrade beam quality. Other potentially significant optical performance effects may result from instability and aging of the optics, temperature, humidity, pressure, transmitted vibration, and contamination from the work site or other sources

  12. High power test of low enriched UZrH

    West, Gordon [General Atomic Co., San Diego, CA (United States)

    1980-07-01

    TRIGA-LEU fuel is currently undergoing high power tests in the 30 MW Oak Ridge Reactor. These tests are being funded by the Department of Energy through the RERTR program [Reduced Enrichment Research and Test Reactor program administered by Argonne National Laboratory] and began in mid-December, 1979 on a 16-rod shrouded cluster. The fuel rods are 0.51 in. 0D, clad with 0.16 in. Incoloy and the fuel length is 22 in. It is planned to test the UZrH fuel with 45, 30 and 20 wt-% U (nominal 20% enriched), to burnup values of about 50% of the contained U-235 in the 45 wt-% rods and about 40% and 35% burnup in the 30 wt-%, and 20 wt-% U fuel. It will take about 2 years of irradiation to produce the desired burnup in the 45 wt-% U fuel. Currently being tested are six 45 wt-% U and five 30 wt-% U rods. The remaining 5 rods are stainless steel dummies which were necessary to meet an operational requirement of the ORR which limits the power generation in a fuel rod to a value which would not raise the coolant temperature above the saturation level. Maximum calculated fuel rod powers were 40 kW, which would produce a fuel temperature of about 650 deg. C. The measured temperatures are about 400 deg. C and 350 deg. C for the 45 and 30 wt-% U fuel, respectively. Flow and {delta}T measurements show the cluster power generation to be about 250 kW, or about 65% of the design value. Reasons for the lower than expected power are still being evaluated and a proposal has been submitted for rearrangement of the fuel rods within the cluster to raise the powers and temperatures in the TRIGA-LEU fuel rods. (author)

  13. Reactor G1: high power experiments; Experiences a forte puissance

    Laage, F de; Teste du Baillet, A; Veyssiere, A; Wanner, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires; Retel, H [Societe Rateau, D.E.A. (France)

    1957-07-01

    The experiments carried out in the starting-up programme of the reactor G1 comprised a series of tests at high power, which allowed the following points to be studied: 1- Effect of poisoning by Xenon (absolute value, evolution). 2- Temperature coefficients of the uranium and graphite for a temperature distribution corresponding to heating by fission. 3- Effect of the pressure (due to the coiling system) on the reactivity. 4- Calibration of the security rods as a function of their position in the pile (1). 5- Temperature distribution of the graphite, the sheathing, the uranium and the air leaving the canals, in a pile running normally at high power. 6- Neutron flux distribution in a pile running normally at high power. 7- Determination of the power by nuclear and thermodynamic methods. These experiments have been carried out under two very different pile conditions. From the 1. to the 15. of August 1956, a series of power increases, followed by periods of stabilisation, were induced in a pile containing uranium only, in 457 canals, amounting to about 34 tons of fuel. A knowledge of the efficiency of the control rods in such a pile has made it possible to measure with good accuracy the principal effects at high temperatures, that is, to deal with points 1, 2, 3, 5. Flux charts giving information on the variations of the material Laplacian and extrapolation lengths in the reflector have been drawn up. Finally the thermodynamic power has been measured under good conditions, in spite of some installation difficulties. On September 16, the pile had its final charge of 100 tons. All the canals were loaded, 1,234 with uranium and 53 (i.e. exactly 4 per cent of the total number) with thorium uniformly distributed in a square lattice of 100 cm side. Since technical difficulties prevented the calibration of the control rods, the measurements were limited to the determination of the thermodynamic power and the temperature distributions (points 5 and 7). This report will

  14. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    Calvez, S.; Adams, M. J.

    2012-09-01

    achievements in the June 1987 Special Issue of IEEE Journal of Quantum Electronics. The Millennium Issue of IEEE Journal of Selected Topics in Quantum Electronics presented a further set of articles on historical aspects of the subject as well as a 'snapshot' of current research in June 2000. It is not the intention here to duplicate any of this historical material that is already available, but rather to complement it with personal recollections from researchers who were involved in laser development in the USA, France, Russia and the UK. Hence, in addition to fascinating accounts of the discovery of the theoretical condition for stimulated emission from semiconductors and of the pioneering work at IBM, there are two complementary views of the laser research at the Lebedev Institute, and personal insights into the developments at STL and at Bell Laboratories. These are followed by an account of the scientific and technological connections between the early pioneering breakthroughs and the commercialisation of semiconductor laser products. Turning to the papers from today's researchers, there is coverage of many of the current 'hot' topics including quantum cascade lasers, mid-infrared lasers, high-power lasers, the exciting developments in understanding and exploiting the nonlinear dynamics of lasers, and photonic integrated circuits with extremely high communication data capacity, as well as reports of recent progress on laser materials such as dilute nitrides and bismides, photonic crystals, quantum dots and organic semiconductors. Thanks are due to Jarlath McKenna for sterling support from IOP Publishing and to Peter Blood for instigating this Special Issue and inviting us to serve as Guest Editors.

  15. High power RF systems for LEHIPA of ADS

    Pande, Manjiri; Shrotriya, Sandip; Sharma, Sonal; Rao, B.V.R.; Mishra, J.K.; Patel, Niranjan; Gupta, S.K.

    2011-01-01

    Worldwide accelerator driven sub-critical system (ADS) has generated a huge interest for various reasons. In India, as a part of accelerator driven sub-critical system (ADS) program, a normal conducting, low energy high intensity proton accelerator (LEHIPA) of energy 20 MeV and beam current of 30 mA is being developed in Bhabha Atomic Research Centre (BARC). LEHIPA comprises of Electron Cyclotron Resonance (ECR) ion source (50 KeV), Radio Frequency Quadrupole (RFQ) accelerator (3 MeV) and Drift tube Linac (DTL) 1 and 2 (10 MeV and 20 MeV respectively). As per the accelerator physics design, RFQ requires nearly 530 kW RF power while each of DTL need 900 kW. Each accelerating cavity will be driven by a one- megawatt (CW) klystron based high power RF (HPRF) system at 352.21 MHz. Three such RF systems will be developed. The RF system has been designed around five cavity klystron tube TH2089F (Thales make) capable of delivering 1 MW continuous wave power at 352.21 MHz. The klystron has a gain of 40 dB and efficiency around 62 %. Each of the RF system comprises of a low power solid state driver (∼ 100 W), klystron tube, harmonic filter, directional coupler, Y-junction circulator (AFT make), RF load and WR2300 wave guide based RF transmission line each of 1 MW capacity. It also includes other subsystems like bias supplies (high voltage (HV) and low voltage (LV)), HV interface system, interlock and protection circuits, dedicated low conductivity water-cooling, pulsing circuitry/mechanisms etc. WR 2300 based RF transmission line transmits and feeds the RE power from klystron source to respective accelerating cavity. This transmission line starts from second port of the circulator and consists of straight sections, full height to half height transition, magic Tee, termination load at the centre of magic tee, half height sections, directional couplers and RE windows. For X-ray shielding, klystron will be housed in a lead (3 mm) based shielded cage. This system set up has a

  16. Time-dependent spectrum analysis of high power gyrotrons

    Schlaich, Andreas

    2015-01-01

    In this work, an investigation of vacuum electronic oscillators capable of generating multi-megawatt continuous wave output power in the millimeter-wave range (so-called gyrotrons) through spectral measurements is presented. The centerpiece is the development of a measurement system with a high dynamic range (50-60 dB) for time-dependent spectrum analysis, covering the frequency range 100-170 GHz with instantaneous bandwidths of 6-12 GHz. Despite relying on heterodyne reception through harmonic mixers, the Pulse Spectrum Analysis (PSA) system maintains RF unambiguity in the spectrogram output through the application of a novel RF reconstruction technique. Using the new possibilities, a wide range of spectral phenomena in gyrotrons has been investigated, such as cavity mode jumps, lowfrequency modulation, frequency tuning in long pulses and the spectral behavior during the presence of an RF window arc. A dedicated investigation on parasitic RF oscillations in W7-X gyrotrons combining several analysis techniques led to the conclusion that after-cavity oscillations can be physical reality in high power gyrotrons, and are the probable cause for the undesired signals observed. Apart from systematic parameter sweeps using the PSA system, an analytical dispersion analysis in the Brillouin diagram was applied, and numerical gyrotron interaction simulations of unprecedented extent were conducted. Furthermore, the improved frequency measurement capabilities were employed to analyze the frequency tuning through thermal expansion and electrostatic neutralization caused by ionization inside the tube in long-pulse operation. By macroscopically modeling the gas dynamics and ionization processes in combination with a fitting process, the time dependences of the two processes could be investigated. In doing so, indication was found that the neutralization in W7-X gyrotrons amounts to only 60% of the electrostatic depression voltage, instead of 100% as widely believed for

  17. Time-dependent spectrum analysis of high power gyrotrons

    Schlaich, Andreas

    2015-07-01

    In this work, an investigation of vacuum electronic oscillators capable of generating multi-megawatt continuous wave output power in the millimeter-wave range (so-called gyrotrons) through spectral measurements is presented. The centerpiece is the development of a measurement system with a high dynamic range (50-60 dB) for time-dependent spectrum analysis, covering the frequency range 100-170 GHz with instantaneous bandwidths of 6-12 GHz. Despite relying on heterodyne reception through harmonic mixers, the Pulse Spectrum Analysis (PSA) system maintains RF unambiguity in the spectrogram output through the application of a novel RF reconstruction technique. Using the new possibilities, a wide range of spectral phenomena in gyrotrons has been investigated, such as cavity mode jumps, lowfrequency modulation, frequency tuning in long pulses and the spectral behavior during the presence of an RF window arc. A dedicated investigation on parasitic RF oscillations in W7-X gyrotrons combining several analysis techniques led to the conclusion that after-cavity oscillations can be physical reality in high power gyrotrons, and are the probable cause for the undesired signals observed. Apart from systematic parameter sweeps using the PSA system, an analytical dispersion analysis in the Brillouin diagram was applied, and numerical gyrotron interaction simulations of unprecedented extent were conducted. Furthermore, the improved frequency measurement capabilities were employed to analyze the frequency tuning through thermal expansion and electrostatic neutralization caused by ionization inside the tube in long-pulse operation. By macroscopically modeling the gas dynamics and ionization processes in combination with a fitting process, the time dependences of the two processes could be investigated. In doing so, indication was found that the neutralization in W7-X gyrotrons amounts to only 60% of the electrostatic depression voltage, instead of 100% as widely believed for

  18. Thermal Response to High-Power Holmium Laser Lithotripsy.

    Aldoukhi, Ali H; Ghani, Khurshid R; Hall, Timothy L; Roberts, William W

    2017-12-01

    The aim of this study was to investigate "caliceal" fluid temperature changes during holmium laser activation/lithotripsy using settings up to 40 W power output with different irrigation flow rates. The experimental system consisted of a glass test tube (diameter 10 mm/length 75 mm) filled with deionized water, to mimic a calix. Real-time temperature was recorded using a thermocouple (Physitemp, NJ) positioned 5 mm from the bottom of the tube. A 200 μm laser fiber (Flexiva; Boston Scientific, MA) was introduced through the working channel of a disposable ureteroscope (LithoVue; Boston Scientific) and the laser fiber tip was positioned 15 mm above the bottom of the test tube. Deionized water irrigation (room temperature) through the working channel of the ureteroscope was delivered at flow rates of 0, 7-8, 14-15, and 38-40 mL/minute. A 120-W holmium laser (pulse 120; Lumenis, CA) was used. The following settings were explored: 0.5 J × 10 Hz, 1.0 J × 10 Hz, 0.5 J × 20 Hz, 1.0 J × 20 Hz, 0.5 J × 40 Hz, 1.0 J × 40 Hz, and 0.5 J × 80 Hz. During each experiment, the laser was activated continuously for 60 seconds. Temperature increased with increasing laser power output and decreasing irrigation flow rate. The highest temperature, 70.3°C (standard deviation 2.7), occurred with laser setting of 1.0 J × 40 Hz and no irrigation after 60 seconds of continuous laser firing. None of the tested laser settings and irrigation parameters produced temperature exceeding 51°C when activated for only 10 seconds of continuous laser firing. High-power holmium settings fired in long bursts with low irrigation flow rates can generate high fluid temperatures in a laboratory "caliceal" model. Awareness of this risk allows urologist to implement a variety of techniques (higher irrigation flow rates, intermittent laser activation, and potentially cooled irrigation fluid) to control and mitigate thermal

  19. Single frequency semiconductor lasers

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  20. Basic semiconductor physics

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  1. Semiconductor physics an introduction

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  2. Three dimensional strained semiconductors

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  3. Compound semiconductor device modelling

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  4. Optically coupled semiconductor device

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  5. Doping of organic semiconductors

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Images through semiconductors

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  7. Muonium states in semiconductors

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  8. Nonradiative recombination in semiconductors

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  9. Doping of organic semiconductors

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Isotopically controlled semiconductors

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  11. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  12. Survey of semiconductor physics

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  13. Semiconductor Ion Implanters

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  14. The Physics of Semiconductors

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  15. High-Powered, Ultrasonically Assisted Thermal Stir Welding

    Ding, Robert

    2013-01-01

    distance equal to the thickness of the material being welded. The TSW process can be significantly improved by reducing the draw forces. This can be achieved by reducing the friction forces between the weld workpieces and the containment plates. High-power ultrasonic (HPU) vibrations of the containment plates achieve friction reduction in the TSW process. Furthermore, integration of the HPU energy into the TSW stir rod can increase tool life of the stir rod, and can reduce shear forces to which the stir rod is subjected during the welding process. TSW has been used to successfully join 0.500-in (˜13-mm) thick commercially pure (CP) titanium, titanium 6AL- 4V, and titanium 6AL-4V ELI in weld joint lengths up to 9 ft (˜2.75-m) long. In addition, the TSW process was used to fabricate a sub-scale hexagonally shaped gun turret component for the U.S. Navy. The turret is comprised of six 0.5000-in (˜13-mm) thick angled welds. Each angled weld joint was prepared by machining the mating surfaces to 120deg. The angled weld joint was then fixtured using an upper and lower containment plate of the same geometry of the angled weld joint. The weld joint was then stirred by the stir rod as it and the upper and lower containment plates traverse through the angled joint prep.

  16. Effect of high power microwaves on rats locomotion and cognition

    Seze, Rene de; Ammari, Mohamed; Sakly, Mohsen; Abdelmelek, Hafedh

    2008-01-01

    Full text: Introduction: High power microwaves (HPM) are suspected to produce some behavioural deficits in rats, however very few studies have been published on this topics. The aim of our experiment was to determine if exposure to HPM could affect behaviour in locomotor (open field) and memory (objects recognition) tasks. Materials and methods: Exposure Six-weeks male rats were exposed to a 13 cm-diameter electromagnetic beam at 10 GHz ; radiation was emitted through 10 seconds trains of 1 ns-pulses at 100 Hz. Power of the source was 350 MW and peak-intensity of the field was 50 GW/m 2 (6100 kV/m) at 5 cm from the conical emitting horn. A single exposure was applied every 5 minutes for 1 h and the behavioural test was performed in the following hour. Time-averaged SAR over that period was estimated at 0.34 W/kg. Peak-power in one pulse was 95 MW/kg and in any second, 9.5 W/kg. Groups: A group of 12 individually exposed animals was compared to a group of 12 sham-exposed animals, set at the same place and in the same ambient conditions as the exposed animals, but omitting HPM emission. Behaviour: An open-field video-track was performed during the different phases. Each phase includes 3 successive trials of 5 min, with 3 minutes in between. Phase 1 studied spontaneous locomotor activity and animal anxiety by recording its position in the arena (periphery meaning anxiety). Phase 2 looked at exploratory behaviour, adding three objects in the field. Time spent close to the objects reflects curiosity. Phase 3 looked at habituation and spatial memory, changing an object from one quadrant (Nr.3) to another one (Nr.4). Phase 4 looked at memory and attention, changing one object by a new one in quadrant Nr.3. Measured parameters were, for any central or peripheral area, containing or not a previously present or a new object: time spent in a quadrant, number of crossed quadrants and run distance. Results and discussion: No significant difference was found for the different

  17. High power density yeast catalyzed microbial fuel cells

    Ganguli, Rahul

    Microbial fuel cells leverage whole cell biocatalysis to convert the energy stored in energy-rich renewable biomolecules such as sugar, directly to electrical energy at high efficiencies. Advantages of the process include ambient temperature operation, operation in natural streams such as wastewater without the need to clean electrodes, minimal balance-of-plant requirements compared to conventional fuel cells, and environmentally friendly operation. These make the technology very attractive as portable power sources and waste-to-energy converters. The principal problem facing the technology is the low power densities compared to other conventional portable power sources such as batteries and traditional fuel cells. In this work we examined the yeast catalyzed microbial fuel cell and developed methods to increase the power density from such fuel cells. A combination of cyclic voltammetry and optical absorption measurements were used to establish significant adsorption of electron mediators by the microbes. Mediator adsorption was demonstrated to be an important limitation in achieving high power densities in yeast-catalyzed microbial fuel cells. Specifically, the power densities are low for the length of time mediator adsorption continues to occur. Once the mediator adsorption stops, the power densities increase. Rotating disk chronoamperometry was used to extract reaction rate information, and a simple kinetic expression was developed for the current observed in the anodic half-cell. Since the rate expression showed that the current was directly related to microbe concentration close to the electrode, methods to increase cell mass attached to the anode was investigated. Electrically biased electrodes were demonstrated to develop biofilm-like layers of the Baker's yeast with a high concentration of cells directly connected to the electrode. The increased cell mass did increase the power density 2 times compared to a non biofilm fuel cell, but the power density

  18. Design of EAST LHCD high power supply feedback control system based on PLC

    Hu Huaichuan; Shan Jiafang

    2009-01-01

    Design of EAST LHCD -35kV/5.6MW high power supply feedback control system based on PLC is described. Industrial computer and PLC are used to control high power supply in the system. PID arithmetic is adopted to achieve the feedback control of voltage of high power supply. Operating system is base on real-time operating system of QNX. Good controlling properties and reliable protective properties of the feedback control system are proved by the experiment results. (authors)

  19. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

    Guo, Jiquan [Stanford Univ., CA (United States)

    2008-12-01

    In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

  20. Advanced specialty fiber designs for high power fiber lasers

    Gu, Guancheng

    The output power of fiber lasers has increased rapidly over the last decade. There are two major limiting factors, namely nonlinear effects and transverse mode instability, prohibiting the power scaling capability of fiber lasers. The nonlinear effects, originating from high optical intensity, primarily limit the peak power scaling. The mode instability, on the other hand, arises from quantum-defect driven heating, causing undesired mode coupling once the power exceeds the threshold and degradation of beam quality. The mode instability has now become the bottleneck for average output power scaling of fiber lasers. Mode area scaling is the most effective way to mitigate nonlinear effects. However, the use of large mode area may increase the tendency to support multiple modes in the core, resulting in lower mode instability threshold. Therefore, it is critical to maintain single mode operation in a large mode area fiber. Sufficient higher order mode suppression can lead to effective single-transverse-mode propagation. In this dissertation, we explore the feasibility of using specialty fiber to construct high power fiber lasers with robust single-mode output. The first type of fiber discussed is the resonantly-enhanced leakage channel fiber. Coherent reflection at the fiber outer boundary can lead to additional confinement especially for highly leaky HOM, leading to lower HOM losses than what are predicted by conventional finite element mothod mode solver considering infinite cladding. In this work, we conducted careful measurements of HOM losses in two leakage channel fibers (LCF) with circular and rounded hexagonal boundary shapes respectively. Impact on HOM losses from coiling, fiber boundary shapes and coating indexes were studied in comparison to simulations. This work demonstrates the limit of the simulation method commonly used in the large-mode-area fiber designs and the need for an improved approach. More importantly, this work also demonstrates that a

  1. Electrodes for Semiconductor Gas Sensors

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  2. Development of semiconductor electronics

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  3. Layered semiconductor neutron detectors

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  4. Basic properties of semiconductors

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  5. Electrowetting on semiconductors

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  6. Semiconductor ionizino. radiation detectors

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  7. Band structure of semiconductors

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  8. High-power picosecond pulse delivery through hollow core photonic band gap fibers

    Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian

    2015-01-01

    We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers......We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers...

  9. Strong Scattering of High Power Millimeter Waves in Tokamak Plasmas with Tearing Modes

    Westerhof, E.; Nielsen, Stefan Kragh; Oosterbeek, J.W.

    2009-01-01

    In tokamak plasmas with a tearing mode, strong scattering of high power millimeter waves, as used for heating and noninductive current drive, is shown to occur. This new wave scattering phenomenon is shown to be related to the passage of the O point of a magnetic island through the high power...

  10. Overview on thermal and mechanical challenges of high power RF electronic packaging

    Yuan, C.A.; Kregting, R.; Driel, W. van; Gielen, A.W.J.; Xiao, A.; Zhang, G.Q.

    2011-01-01

    High Power RF electronics is one of the essential parts for wireless communication, including the personal communication, broadcasting, microwave radar, etc. Moreover, high efficient high power electronics has entered the ISM market, such as the power generator of microwave oven. Power electronics

  11. Quality and performance of laser cutting with a high power SM fiber laser

    Kristiansen, Morten; Selchau, Jacob; Olsen, F. O.

    2013-01-01

    The introduction of high power single mode fiber lasers allows for a beam of high power and a good beam quality factor (M2 ” 1.2), compared to the multimode fiber lasers often utilised in macro laser metal cutting. This paper describes fundamental studies of macro laser metal cutting with a singl...

  12. High-power picosecond pulse delivery through hollow core photonic band gap fibers

    Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian

    2016-01-01

    We demonstrated robust and bend insensitive fiber delivery of high power laser with diffraction limited beam quality for two different kinds of hollow core band gap fibers. The light source for this experiment consists of ytterbium-doped double clad fiber aeroGAIN-ROD-PM85 in a high power amplifier...

  13. The propagation of high power CW scanning electron beam in air

    Korenev, Sergey; Korenev, Ivan

    2002-01-01

    The question of propagation of high power electron beam in air presents the scientific and applied interests. The high power (80 kW) CW electron accelerator 'Rhodotron' with kinetic energy of electrons 5 and 10 MeV was used in the experiments. The experimental results for propagation of scanning electron beams in air are presented and discussed

  14. Design Methodology of High Power Distributed Amplifier Employing Broadband Impedance Transformer

    Narendra, Kumar; Zhurbenko, Vitaliy; Collantes, Juan Mari

    2009-01-01

    A novel topology of a high power distributed amplifier (DA) in combination with a broadband impedance transformer is presented. The advantages of the proposed topology are explored analytically and verified by a full-wave 3D simulations. Stability of the high power DA is verified with the pole...

  15. Preliminary design of high-power wave-guide/transmission system

    ... CW klystron followed by wave-guide filter, dual directional coupler, high-power circulator, three 3 dB magic TEE power dividers to split the main channel into four equal channels of 250 kW each. Each individual channel has dual directional couplers, flexible wave-guide sections and high power ceramic vacuum window.

  16. Collective Thomson scattering of a high power electron cyclotron resonance heating beam in LHD

    Kubo, S.; Nishiura, M.; Tanaka, K.

    2010-01-01

    Collective Thomson scattering (CTS) system has been constructed at LHD making use of the high power ECRH system in LHD. The necessary features for CTS, high power probing beams and receiving beams, both with well defined Gaussian profile and with the fine controllability, are endowed in the ECRH ...

  17. Characterization of a high-power/current pulsed magnetized arc discharge

    Zielinski, J. J.; van der Meiden, H. J.; Morgan, T. W.; D.C. Schram,; De Temmerman, G.

    2012-01-01

    A high-power pulsed magnetized arc discharge has been developed to allow the superimposition of a dc plasma and a high-power plasma impulse with a single plasma source. A capacitor bank (8400 mu F) is parallel-coupled to the current regulated power supply. The current is transiently increased from

  18. Characterization of a high-power/current pulsed magnetized arc discharge

    Zielinski, J.J.; Meiden, van der H.J.; Morgan, T.W.; Schram, D.C.; De Temmerman, G.C.

    2012-01-01

    A high-power pulsed magnetized arc discharge has been developed to allow the superimposition of a dc plasma and a high-power plasma impulse with a single plasma source. A capacitor bank (8400 µF) is parallel-coupled to the current regulated power supply. The current is transiently increased from its

  19. Single filament semiconductor laser

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  20. II-VI semiconductor compounds

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  1. Electronic structure of semiconductor interfaces

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  2. Quantum transport in semiconductor nanowires

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  3. Semiconductor photocatalysis principles and applications

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  4. Progress in semiconductor drift detectors

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  5. Semiconductor materials and their properties

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  6. Optical coherent control in semiconductors

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  7. Terahertz Nonlinear Optics in Semiconductors

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  8. Electronic structure of semiconductor interfaces

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  9. Organic semiconductors in a spin

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  10. Method to improve near-field nonlinearity of a high-power diode laser array on a microchannel cooler

    Zhang, Hongyou; Jia, Yangtao; Cai, Wanshao; Tao, Chunhua; Zah, Chung-en; Liu, Xingsheng

    2018-03-01

    Due to thermal stress, each emitter in a semiconductor laser bar or array is vertically displaced along the p-n junction; the result is that each emitter is not in a line, called near-field nonlinearity. Near-field nonlinearity along a laser bar (also known as "SMILE" effect) degrades the laser beam brightness, which causes an adverse effect on optical coupling and beam shaping. A large SMILE value causes a large divergence angle after collimation and a wider line after collimation and focusing. We simulate the factors affecting the SMILE value of a high-power diode laser array on a microchannel cooler (MCC). According to the simulation results, we have fabricated a series of laser bars bonded on MCCs with lower SMILE value. After simulation and experiment analysis, we found the key factor to affect SMILE is the deformation of the thin MCC because of the distribution of strain and stress in it. We also decreased the SMILE value of 1-cm-wide full bar AuSn bonded on MCCs from 12 to 1 μm by balancing force on MCC to minimize the deformation.

  11. Ion implantation for semiconductors

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  12. Semiconductor radiation detector

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  13. Semiconductor testing method

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  14. Radial semiconductor drift chambers

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  15. Energy distribution in semiconductors

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  16. Organic Semiconductor Photovoltaics

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  17. High-power circulator test results at 350 and 700 MHz

    Roybal, W.; Bradley, J.T.; Rees, D.E.

    2000-01-01

    The high-power RF systems for the Accelerator Production of Tritium (APT) program require high-power circulators at 350 MHz and 700 MHz to protect 1 MW Continuous Wave (CW) klystrons from reflected power. The 350 MHz circulator is based on the CERN, EXF, and APS designs and has performed very well. The 700 MHz circulator is a new design. Prototype 700 MHz circulators have been high-power tested at Los Alamos National Laboratory (LANL). The first of these circulators has satisfied performance requirements. The circulator requirements, results from the testing, and lessons learned from this development are presented and discussed

  18. High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

    Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

    2002-01-01

    It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

  19. Magnetic excitations in ferromagnetic semiconductors

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  20. Semiconductor Nanocrystals for Biological Imaging

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  1. Recent DIII-D high power heating and current drive experiments

    Simonen, T.C.; Jackson, G.L.; Lazarus, E.A.; Mahdavi, M.A.; Petrie, T.W.; Politzer, P.A.; Taylor, T.S.

    1995-01-01

    This paper describes recent DIII-D high power heating and current drive experiments. Described are experiments with improved wall conditioning, divertor particle pumping, radiative divertor experiments, studies of plasma shape and high poloidal β. ((orig.))

  2. High Altitude Electromagnetic Pulse (HEMP) and High Power Microwave (HPM) Devices: Threat Assessments

    Wilson, Clay

    2006-01-01

    .... This method is called High Power Microwave (HPM). Several nations, including sponsors of terrorism, may currently have a capability to use EMP as a weapon for cyberterrorism to disrupt communications and other parts of the U.S...

  3. High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase II

    National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

  4. High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase I

    National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

  5. High Altitude Electromagnetic Pulse (HEMP) and High Power Microwave (HPM) Devices: Threat Assessments

    Wilson, Clay

    2005-01-01

    .... This method is called High Power Microwave (HPM). Several nations, including reported sponsors of terrorism, may currently have a capability to use EMP as a weapon to disrupt communications and other parts of the U.S...

  6. High Power MPD Thruster Development at the NASA Glenn Research Center

    LaPointe, Michael R.; Mikellides, Pavlos G.; Reddy, Dhanireddy (Technical Monitor)

    2001-01-01

    Propulsion requirements for large platform orbit raising, cargo and piloted planetary missions, and robotic deep space exploration have rekindled interest in the development and deployment of high power electromagnetic thrusters. Magnetoplasmadynamic (MPD) thrusters can effectively process megawatts of power over a broad range of specific impulse values to meet these diverse in-space propulsion requirements. As NASA's lead center for electric propulsion, the Glenn Research Center has established an MW-class pulsed thruster test facility and is refurbishing a high-power steady-state facility to design, build, and test efficient gas-fed MPD thrusters. A complimentary numerical modeling effort based on the robust MACH2 code provides a well-balanced program of numerical analysis and experimental validation leading to improved high power MPD thruster performance. This paper reviews the current and planned experimental facilities and numerical modeling capabilities at the Glenn Research Center and outlines program plans for the development of new, efficient high power MPD thrusters.

  7. High Power (50W) WDM Space Lasercom 1.5um Fiber Laser Transmitter, Phase I

    National Aeronautics and Space Administration — Fibertek proposes to develop and demonstrate a spaceflight prototype of a wideband, high power (up to 50W), polarization maintaining (PM), 1.5-um fiber laser...

  8. High Power Ga2O3-based Schottky Diode, Phase I

    National Aeronautics and Space Administration — This SBIR Program will develop a new generation of radiation hard high-power high-voltage Ga2O3-based Schottky diode, which is suitable for applications in the space...

  9. Recent DIII-D high power heating and current drive experiments

    Simonen, T.C.; Jackson, G.L.; Mahdavi, M.A.; Petrie, T.W.; Politzer, P.A.; Taylor, T.S.; Lazarus, E.A.

    1994-02-01

    This paper describes recent DIII-D high power heating and current drive experiments. Describes are experiments with improved wall conditioning, divertor particle pumping, radiative divertor experiments, studies of plasma shape and high poloidal beta

  10. Recent DIII-D high power heating and current drive experiments

    Simonen, T.C. [General Atomics, San Diego, CA (United States); Jackson, G.L. [General Atomics, San Diego, CA (United States); Lazarus, E.A. [Oak Ridge National Lab., TN (United States); Mahdavi, M.A. [General Atomics, San Diego, CA (United States); Petrie, T.W. [General Atomics, San Diego, CA (United States); Politzer, P.A. [General Atomics, San Diego, CA (United States); Taylor, T.S. [General Atomics, San Diego, CA (United States); DIII-D Team

    1995-01-01

    This paper describes recent DIII-D high power heating and current drive experiments. Described are experiments with improved wall conditioning, divertor particle pumping, radiative divertor experiments, studies of plasma shape and high poloidal {beta}. ((orig.)).

  11. Study of In-Cylinder Reactions of High Power-Density Direct Injection Diesel Engines

    Jansons, M

    2004-01-01

    Direct-injection (DI) Diesel or compression-ignition (CI) engine combustion process is investigated when new design and operational strategies are employed in order to achieve a high power-density (HPD) engine...

  12. Diode pumped 1kHz high power Nd:YAG laser with excellent beam quality

    Godfried, Herman; Godfried, H.P; Offerhaus, Herman L.

    1997-01-01

    The design and operation of a one kilohertz diode pumped all solid-state Nd:YAG master oscillator power amplifier system with a phase conjugate mirror is presented. The setup allows high power scaling without reduction in beam quality.

  13. Efficient high power 2 micron Tm3+-Doped Fiber Laser, Phase I

    National Aeronautics and Space Administration — This proposal is for the development of new Tm3+ doped germanate glass fibers for efficient high power 2 micron fiber lasers capable of generating an output power of...

  14. Efficient, High Power Density Hydrocarbon-Fueled Solid Oxide Stack System, Phase II

    National Aeronautics and Space Administration — Precision Combustion, Inc. (PCI) proposes to develop and demonstrate an innovative high power density design for direct internal reforming of regolith off-gases...

  15. Efficient, high power density hydrocarbon-fueled solid oxide stack system, Phase I

    National Aeronautics and Space Administration — Precision Combustion, Inc. (PCI) proposes to develop and demonstrate an innovative high power density design for direct internal reforming of regolith off-gases...

  16. State of the art in semiconductor detectors

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  17. State of the art in semiconductor detectors

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  18. Semiconductor device comprising a pn-heterojunction

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  19. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  20. Controlling Stimulated Brillouin/Raman Scattering in High Power Fiber Lasers

    2017-08-09

    AFRL-RD-PS- AFRL-RD-PS- TR-2017-0043 TR-2017-0043 CONTROLLING STIMULATED BRILLOUIN/RAMAN SCATTERING IN HIGH POWER FIBER LASERS Cody Mart Ben...average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed...unlimited. 13. SUPPLEMENTARY NOTES 14. ABSTRACT This research addressed suppression of stimulated Brillouin/Raman scattering in high power fiber lasers

  1. Optical fiber cable for transmission of high power laser energy over great distances

    Zediker, Mark S.; Rinzler, Charles C.; Faircloth, Brian O.; Moxley, Joel F.; Koblick, Yeshaya

    2016-05-24

    There is provided a system and apparatus for the transmission of high power laser energy over great distances without substantial power loss and without the presence of stimulated Raman scattering. There is further provided systems and optical fiber cable configurations and optical fiber structures for the delivering high power laser energy over great distances to a tool or surface to perform an operation or work with the tool or upon the surface.

  2. High Power Combiner/Divider with Coupled Lines for Broadband Applications

    2017-03-20

    novel isolation structure will also be presented. I. INTRODUCTION Power divider/combiners are traditionally used in the development of high power ...a novel Gysel divider/combiner structure have been demonstrated. The divider/combiner are applicable to various high- power , broadband radar, EW...Gysel Power Divider With Arbitrary Power Ratios and Filtering Responses Using Coupling Structure ,” IEEE Transactions on Microwave Theory and Tech., vol

  3. Fabrication and Characterization of Li-ion Electrodes for High-Power Energy Storage Devices

    Lai, Chun-Han

    2017-01-01

    Renewable energy technologies have been a rapidly emerging option to meet future energy demand. However, their systems require stable, high-power storage devices to overcome fluctuating energy outputs for consistent distribution. Since traditional Li-ion batteries (LIB) are not considered to be capable of fast charging and discharging, we have to develop devices with new chemistry for high-power operation. This dissertation focuses on the development of supercapacitors and high-rate batteries...

  4. Novel High Power Type-I Quantum Well Cascade Diode Lasers

    2017-08-30

    Novel High Power Type-I Quantum Well Cascade Diode Lasers The views, opinions and/or findings contained in this report are those of the author(s...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6... High Power Type-I Quantum Well Cascade Diode Lasers Report Term: 0-Other Email: leon.shterengas@stonybrook.edu Distribution Statement: 1-Approved

  5. A High Power Density Integrated Charger for Electric Vehicles with Active Ripple Compensation

    Pan, Liwen; Zhang, Chengning

    2015-01-01

    This paper suggests a high power density on-board integrated charger with active ripple compensation circuit for electric vehicles. To obtain a high power density and high efficiency, silicon carbide devices are reported to meet the requirement of high-switching-frequency operation. An integrated bidirectional converter is proposed to function as AC/DC battery charger and to transfer energy between battery pack and motor drive of the traction system. In addition, the conventional H-bridge cir...

  6. Effect on antenna structure of high power rf during plasma operation

    Haste, G.R.; Thomas, C.E.; Fadnek, A.; Carter, M.D.; Beaumont, B.; Becoulet, A.; Kuus, H.; Saoutic, B.

    1993-01-01

    High-power, long-pulse operation on the Tore Supra tokamak results in considerable stress on the plasma-facing components. The ICH antennas must deliver high-power rf(up to 4 MW per antenna) in this environment. The antenna structure is therefore subjected to the power flux resulting from the interaction between rf and the edge plasma. The structure's response during operation is described, as is the condition of the antenna after prolonged use

  7. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  8. Selective, electrochemical etching of a semiconductor

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  9. Metal-insulator-semiconductor photodetectors.

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  10. Metal-Insulator-Semiconductor Photodetectors

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  11. Quantum optics with semiconductor nanostructures

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  12. Atomic layer deposition for semiconductors

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  13. Semiconductor technology program. Progress briefs

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  14. Semiconductor radiation detectors. Device physics

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  15. Self-assembling peptide semiconductors

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  16. Temperature controller of semiconductor laser

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  17. Semiconductor Nonlinear Dynamics Study by Broadband Terahertz Spectroscopy

    Ho, I.-Chen

    Semiconductor nonlinearity in the terahertz (THz) frequency range has been attracting considerable attention due to the recent development of high-power semiconductor-based nanodevices. However, the underlying physics concerning carrier dynamics in the presence of high-field THz transients is still obscure. This thesis introduces an ultrafast, time-resolved THz pump/THz probe approach to the study of semiconductor properties in the nonlinear regime. The carrier dynamics regarding two mechanisms, intervalley scattering and impact ionization, is observed for doped InAs on a sub-picosecond time scale. In addition, polaron modulation driven by intense THz pulses is experimentally and theoretically investigated. The observed polaron dynamics verifies the interaction between energetic electrons and a phonon field. In contrast to previous work which reports optical phonon responses, acoustic phonon modulations are addressed in this study. A further understanding of the intense field interacting with solid materials will accelerate the development of semiconductor devices. This thesis starts with the design and performance of a table-top THz spectrometer which has the advantages of ultra-broad bandwidth (one order higher bandwidth compared to a conventional ZnTe sensor) and high electric field strength (>100 kV/cm). Unlike the conventional THz time-domain spectroscopy, the spectrometer integrates a novel THz air-biased-coherent-detection (THz-ABCD) technique and utilizes selected gases as THz emitters and sensors. In comparison with commonly used electro-optic (EO) crystals or photoconductive (PC) dipole antennas, the gases have the benefits of no phonon absorption as existing in EO crystals and no carrier life time limitation as observed in PC dipole antennas. The newly development THz-ABCD spectrometer with a strong THz field strength capability provides a platform for various research topics especially on the nonlinear carrier dynamics of semiconductors. Two mechanisms

  18. Wake fields in semiconductor plasmas

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  19. Semiconductor research with reactor neutrons

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  20. Semiconductor crystal high resolution imager

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  1. Dissipative chaos in semiconductor superlattices

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  2. Reducing leakage current in semiconductor devices

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  3. Optical orientation in ferromagnet/semiconductor hybrids

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  4. Optical orientation in ferromagnet/semiconductor hybrids

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  5. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  6. Semiconductors for plasmonics and metamaterials

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  7. Ripening of Semiconductor Nanoplatelets.

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  8. A semiconductor laser device

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  9. Semiconductor integrated circuits

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  10. Impurity gettering in semiconductors

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  11. Semiconductor acceleration sensor

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  12. High Power High Thrust Ion Thruster (HPHTion): 50 CM Ion Thruster for Near-Earth Applications, Phase I

    National Aeronautics and Space Administration — Advances in high power, photovoltaic technology has enabled the possibility of reasonably sized, high specific power, high power, solar arrays. New thin film solar...

  13. Semiconductor Quantum Dash Broadband Emitters: Modeling and Experiments

    Khan, Mohammed Zahed Mustafa

    2013-10-01

    Broadband light emitters operation, which covers multiple wavelengths of the electromagnetic spectrum, has been established as an indispensable element to the human kind, continuously advancing the living standard by serving as sources in important multi-disciplinary field applications such as biomedical imaging and sensing, general lighting and internet and mobile phone connectivity. In general, most commercial broadband light sources relies on complex systems for broadband light generation which are bulky, and energy hungry. \\tRecent demonstration of ultra-broadband emission from semiconductor light sources in the form of superluminescent light emitting diodes (SLDs) has paved way in realization of broadband emitters on a completely novel platform, which offered compactness, cost effectiveness, and comparatively energy efficient, and are already serving as a key component in medical imaging systems. The low power-bandwidth product is inherent in SLDs operating in the amplified spontaneous emission regime. A quantum leap in the advancement of broadband emitters, in which high power and large bandwidth (in tens of nm) are in demand. Recently, the birth of a new class of broadband semiconductor laser diode (LDs) producing multiple wavelength light in stimulated emission regime was demonstrated. This very recent manifestation of a high power-bandwidth-product semiconductor broadband LDs relies on interband optical transitions via quantum confined dot/dash nanostructures and exploiting the natural inhomogeneity of the self-assembled growth technology. This concept is highly interesting and extending the broad spectrum of stimulated emission by novel device design forms the central focus of this dissertation. \\tIn this work, a simple rate equation numerical technique for modeling InAs/InP quantum dash laser incorporating the properties of inhomogeneous broadening effect on lasing spectra was developed and discussed, followed by a comprehensive experimental analysis

  14. Semiconductor lasers stability, instability and chaos

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  15. High-power random distributed feedback fiber laser: From science to application

    Du, Xueyuan [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Naval Academy of Armament, Beijing 100161 (China); Zhang, Hanwei; Xiao, Hu; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu; Liu, Zejin [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2016-10-15

    A fiber laser based on random distributed feedback has attracted increasing attention in recent years, as it has become an important photonic device and has found wide applications in fiber communications or sensing. In this article, recent advances in high-power random distributed feedback fiber laser are reviewed, including the theoretical analyses, experimental approaches, discussion on the practical applications and outlook. It is found that a random distributed feedback fiber laser can not only act as an information photonics device, but also has the feasibility for high-efficiency/high-power generation, which makes it competitive with conventional high-power laser sources. In addition, high-power random distributed feedback fiber laser has been successfully applied for midinfrared lasing, frequency doubling to the visible and high-quality imaging. It is believed that the high-power random distributed feedback fiber laser could become a promising light source with simple and economic configurations. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

    Ji, Jae-Hoon; Jo, GaeHun; Ha, Jae-Geun; Koo, Sang-Mo; Kamiko, Masao; Hong, JunHee; Koh, Jung-Hyuk

    2018-09-01

    In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

  17. Advances in high power linearly polarized fiber laser and its application

    Zhou, Pu; Huang, Long; Ma, Pengfei; Xu, Jiangming; Su, Rongtao; Wang, Xiaolin

    2017-10-01

    Fiber lasers are now attracting more and more research interest due to their advantages in efficiency, beam quality and flexible operation. Up to now, most of the high power fiber lasers have random distributed polarization state. Linearlypolarized (LP) fiber lasers, which could find wide application potential in coherent detection, coherent/spectral beam combining, nonlinear frequency conversion, have been a research focus in recent years. In this paper, we will present a general review on the achievements of various kinds of high power linear-polarized fiber laser and its application. The recent progress in our group, including power scaling by using power amplifier with different mechanism, high power linearly polarized fiber laser with diversified properties, and various applications of high power linear-polarized fiber laser, are summarized. We have achieved 100 Watt level random distributed feedback fiber laser, kilowatt level continuous-wave (CW) all-fiber polarization-maintained fiber amplifier, 600 watt level average power picosecond polarization-maintained fiber amplifier and 300 watt level average power femtosecond polarization-maintained fiber amplifier. In addition, high power linearly polarized fiber lasers have been successfully applied in 5 kilowatt level coherent beam combining, structured light field and ultrasonic generation.

  18. The IBA Rhodotron: an industrial high-voltage high-powered electron beam accelerator for polymers radiation processing

    Van Lancker, Marc; Herer, Arnold; Cleland, Marshall R.; Jongen, Yves; Abs, Michel

    1999-05-01

    The Rhodotron is a high-voltage, high-power electron beam accelerator based on a design concept first proposed in 1989 by J. Pottier of the French Atomic Agency, Commissariat à l'Energie Atomique (CEA). In December 1991, the Belgian particle accelerator manufacturer, Ion Beam Applications s.a. (IBA) entered into an exclusive agreement with the CEA to develop and industrialize the Rhodotron. Electron beams have long been used as the preferential method to cross-link a variety of polymers, either in their bulk state or in their final form. Used extensively in the wire and cable industry to toughen insulating jackets, electron beam-treated plastics can demonstrate improved tensile and impact strength, greater abrasion resistance, increased temperature resistance and dramatically improved fire retardation. Electron beams are used to selectively cross-link or degrade a wide range of polymers in resin pellets form. Electron beams are also used for rapid curing of advanced composites, for cross-linking of floor-heating and sanitary pipes and for cross-linking of formed plastic parts. Other applications include: in-house and contract medical device sterilization, food irradiation in both electron and X-ray modes, pulp processing, electron beam doping of semi-conductors, gemstone coloration and general irradiation research. IBA currently markets three models of the Rhodotron, all capable of 10 MeV and alternate beam energies from 3 MeV upwards. The Rhodotron models TT100, TT200 and TT300 are typically specified with guaranteed beam powers of 35, 80 and 150 kW, respectively. Founded in 1986, IBA, a spin-off of the Cyclotron Research Center at the University of Louvain (UCL) in Belgium, is a pioneer in accelerator design for industrial-scale production.

  19. The IBA Rhodotron: an industrial high-voltage high-powered electron beam accelerator for polymers radiation processing

    Lancker, Marc van; Herer, Arnold; Cleland, Marshall R.; Jongen, Yves; Abs, Michel

    1999-01-01

    The Rhodotron is a high-voltage, high-power electron beam accelerator based on a design concept first proposed in 1989 by J. Pottier of the French Atomic Agency, Commissariat a l'Energie Atomique (CEA). In December 1991, the Belgian particle accelerator manufacturer, Ion Beam Applications s.a. (IBA) entered into an exclusive agreement with the CEA to develop and industrialize the Rhodotron. Electron beams have long been used as the preferential method to cross-link a variety of polymers, either in their bulk state or in their final form. Used extensively in the wire and cable industry to toughen insulating jackets, electron beam-treated plastics can demonstrate improved tensile and impact strength, greater abrasion resistance, increased temperature resistance and dramatically improved fire retardation. Electron beams are used to selectively cross-link or degrade a wide range of polymers in resin pellets form. Electron beams are also used for rapid curing of advanced composites, for cross-linking of floor-heating and sanitary pipes and for cross-linking of formed plastic parts. Other applications include: in-house and contract medical device sterilization, food irradiation in both electron and X-ray modes, pulp processing, electron beam doping of semi-conductors, gemstone coloration and general irradiation research. IBA currently markets three models of the Rhodotron, all capable of 10 MeV and alternate beam energies from 3 MeV upwards. The Rhodotron models TT100, TT200 and TT300 are typically specified with guaranteed beam powers of 35, 80 and 150 kW, respectively. Founded in 1986, IBA, a spin-off of the Cyclotron Research Center at the University of Louvain (UCL) in Belgium, is a pioneer in accelerator design for industrial-scale production

  20. Summary of the 3rd workshop on high power RF-systems for accelerators

    Sigg, P.K.

    2005-01-01

    The aim of this workshop was to bring together experts from the field of CW and high average power RF systems. The focus was on operational and reliability issues of high-power amplifiers using klystrons and tubes, large power supplies; as well as cavity design and low-level RF and feedback control systems. All these devices are used in synchrotron radiation facilities, high power linacs and collider rings, and cyclotrons. Furthermore, new technologies and their applications were introduced, amongst other: high power solid state amplifiers, IOT amplifiers, and high voltage power supplies employing solid state controllers/crowbars. Numerical methods for complete rf-field modeling of complex RF structures like cyclotrons were presented, as well as integrated RF-cavity designs (electro-magnetic fields and mechanical structure), using numerical methods. (author)