WorldWideScience

Sample records for high-performance thin film

  1. High Performance Thin-Film Composite Forward Osmosis Membrane

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A.; Schiffman, Jessica D.; Elimelech, Menachem

    2010-01-01

    obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed

  2. High performance thin-film composite forward osmosis membrane.

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A; Schiffman, Jessica D; Elimelech, Menachem

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 mum) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m(2-)h(-1), while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution.

  3. High Performance Thin-Film Composite Forward Osmosis Membrane

    Yip, Ngai Yin

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 μm) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m2-h-1, while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution. © 2010 American Chemical Society.

  4. Electrochemically synthesized nanocrystalline spinel thin film for high performance supercapacitor

    Gupta, Vinay [Carbon Technology Unit, Engineering Materials Division, National Physical Laboratory, New-Delhi, 110012 (India); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan); Japan Science and Technology Agency, Kawaguchi-shi, Saitama, 332-0012 (Japan); Gupta, Shubhra; Miura, Norio [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan)

    2010-06-01

    Spinels are not known for their supercapacitive nature. Here, we have explored electrochemically synthesized nanostructured NiCo{sub 2}O{sub 4} spinel thin-film electrode for electrochemical supercapacitors. The nanostructured NiCo{sub 2}O{sub 4} spinel thin film exhibited a high specific capacitance value of 580 F g{sup -1} and an energy density of 32 Wh kg{sup -1} at the power density of 4 kW kg{sup -1}, accompanying with good cyclic stability. (author)

  5. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

  6. Transparent high-performance CDSE thin-film solar cells

    Mahawela, P.; Jeedigunta, S.; Vakkalanka, S.; Ferekides, C.S.; Morel, D.L.

    2005-01-01

    Simulations indicate that 25-30% efficiency can be achieved with a four-terminal thin-film tandem structure. The bottom low band gap cell can be CuIn 1-x Ga x Se 2 , and CdSe is proposed as the top cell, as it has an ideal band gap of 1.7 eV. In addition to the efficiency requirements, the top cell must also be transparent to effectively transmit sub band gap light to the bottom cell. We have developed CdSe devices that meet many of the requirements of this tandem structure. High electronic quality CdSe has been deposited on SnO 2 and ZnO, which serve as the transparent n-type contact. The p-type transparent contact is ZnSe/Cu. Voc's of 475 mV have been achieved and can be further improved with better contacts. However, record Jsc's in excess of 17 mA/cm 2 have been achieved. This is close to the target 18 mA/cm 2 to meet the efficiency objectives. Transmission of 80% of the sub band gap radiation has been demonstrated for 2-no. muno. m-thick absorber layers. This is also close to the 85% target to achieve the overall tandem efficiency objectives. Improvement of the contact layers to achieve the Voc target is the final challenge

  7. Graphene as tunable contact for high performance thin film transistor

    Liu, Yuan

    Graphene has been one of the most extensively studied materials due to its unique band structure, the linear dispersion at the K point. It gives rise to novel phenomena, such as the anomalous quantum Hall effect, and has opened up a new category of "Fermi-Dirac" physics. Graphene has also attracted enormous attention for future electronics because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. However, graphene has zero intrinsic band gap, thus can not be used as the active channel material for logic transistors with sufficient on/off current ratio. Previous approaches to address this challenge include the induction of a transport gap in graphene nanostructures or bilayer graphene. However, these approaches have proved successful in improving the on-- off ratio of the resulting devices, but often at a severe sacrifice of the deliverable current density. Alternatively, with a finite density of states, tunable work-function and optical transparency, graphene can function as a unique tunable contact material to create a new structure of electronic devices. In this thesis, I will present my effort toward on-off ratio of graphene based vertical thin film transistor. I will include the work form four of my first author publication. I will first present my research studies on the a dramatic enhancement of the overall quantum efficiency and spectral selectivity of graphene photodetector, by coupling with plasmonic nanostructures. It is observed that metallic plasmonic nanostructures can be integrated with graphene photodetectors to greatly enhance the photocurrent and external quantum efficiency by up to 1,500%. Plasmonic nanostructures of variable resonance frequencies selectively amplify the photoresponse of graphene to light of different wavelengths, enabling highly specific detection of multicolours. Then I will show a new design of highly flexible vertical TFTs (VTFTs) with superior electrical

  8. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  9. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  10. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  11. DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

    Franklin, Aaron D

    2015-08-14

    For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices. Copyright © 2015, American Association for the Advancement of Science.

  12. High performance sandwich structured Si thin film anodes with LiPON coating

    Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

    2018-04-01

    The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solidelectrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

  13. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  14. High Performance Nano-Constituent Buffer Layer Thin Films to Enable Low Cost Integrated On-the-Move Communications Systems

    Cole, M. W; Nothwang, W. D; Hubbard, C; Ngo, E; Hirsch, S

    2004-01-01

    .... Utilizing a coplanar device design we successfully designed, fabricated, characterized, and optimized a high performance Ta2O5 thin film passive buffer layer on Si substrates, which will allow...

  15. High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

    Yang, Zhenqian

    2018-01-10

    The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.

  16. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    Hanna, Amir

    2015-12-04

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

  17. Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp.

    Seong, Kieun; Kim, Kyongjun; Park, Si Yun; Kim, Youn Sang

    2013-04-07

    Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.

  18. Wavy channel Thin Film Transistor for area efficient, high performance and low power applications

    Hanna, Amir; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2014-01-01

    We report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor

  19. High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

    Yang, Zhenqian; Deng, Yuhao; Zhang, Xiaowei; Wang, Suo; Chen, Huazhou; Yang, Sui; Khurgin, Jacob; Fang, Nicholas X.; Zhang, Xiang; Ma, Renmin

    2018-01-01

    The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial

  20. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    Yue, Weisheng

    2016-04-07

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York

  1. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    Yue, Weisheng; Wang, Zhihong; Yang, Yang; Han, Jiaguang; Li, Jingqi; Guo, Zaibing; Tan, Hua; Zhang, Xixiang

    2016-01-01

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York

  2. Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

    Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

    2017-10-01

    Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

  3. High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

    Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

    2015-11-01

    High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  5. Solvent-induced crystallization for hybrid perovskite thin-film photodetector with high-performance and low working voltage

    Hu, Wei; Yang, Shuzhen; Fan, Peng; Pan, Anlian; Wu, Runsheng; Yang, Junliang

    2017-01-01

    Organometal trihalide perovskites have emerged as a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. Using a high-quality perovskite thin film prepared by solvent-induced crystallization method and adopting a novel device configuration based on photon recycling effect, a perovskite thin-film photodetector has been constructed with the highest external quantum efficiency of 4.1  ×  10 4 % and responsivity of 219 A W −1 at a low bias of 1 V so far. The device working mechanism was further disclosed based on energy band bending model. The high-performance and low working-voltage perovskite thin-film photodetector will find potential applications in photodetection and optoelectronic integrated circuits. (paper)

  6. Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

    Yue, Wan

    2016-09-28

    Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

  7. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    Nayak, Pradipta K.

    2012-05-16

    Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

  8. Mesoporous polyaniline film on ultra-thin graphene sheets for high performance supercapacitors

    Wang, Qian; Yan, Jun; Fan, Zhuangjun; Wei, Tong; Zhang, Milin; Jing, Xiaoyan

    2014-02-01

    A facile approach has been developed to fabricate mesoporous PANI film on ultra-thin graphene nanosheet (G-mPANI) hybrid by in situ polymerization using graphene-mesoporous silica composite as template. Due to its mesoporous structure, over-all conductive network, G-mPANI electrode displays a specific capacitance of 749 F g-1 at 0.5 A g-1 with excellent rate capability (remains 73% even at 5.0 A g-1), much higher than that of pristine PANI electrode (315 F g-1 at 0.5 A g-1, 39% retention at 5.0 A g-1) in 1 mol L-1 H2SO4 aqueous solution. More interestingly, the G-mPANI hybrid can maintain 88% of its initial capacitance compared to 45% for pristine PANI after 1000 cycles, suggesting a superior electrochemical cyclic stability.

  9. An Alternating 5,5-Dimethylcyclopentadiene-based Copolymer prepared at Room Temperature for High Performance Organic Thin Film Transistors

    Fei, Zhuping; Chen, Lei; Han, Yang; Gann, Eliot; Chesman, Anthony; McNeill, Christopher R.; Anthopoulos, Thomas D.; Heeney, Martin; Pietrangelo, Agostino

    2017-01-01

    We report that the inclusion of non-aromatic 5,5-dimethylcyclopentadiene monomer into a conjugated backbone is an attractive strategy to high performance semiconducting polymers. The use of this monomer enables a room temperature Suzuki copolymerization with a diketopyrrolopyrrole comono-mer to afford a highly soluble, high molecular weight material. The resulting low band gap polymer exhibits excellent photo and thermal stability, and despite a large π-π stacking distance of 4.26 Å, it demonstrates excellent performance in thin-film transistor devices.

  10. An Alternating 5,5-Dimethylcyclopentadiene-based Copolymer prepared at Room Temperature for High Performance Organic Thin Film Transistors

    Fei, Zhuping

    2017-06-05

    We report that the inclusion of non-aromatic 5,5-dimethylcyclopentadiene monomer into a conjugated backbone is an attractive strategy to high performance semiconducting polymers. The use of this monomer enables a room temperature Suzuki copolymerization with a diketopyrrolopyrrole comono-mer to afford a highly soluble, high molecular weight material. The resulting low band gap polymer exhibits excellent photo and thermal stability, and despite a large π-π stacking distance of 4.26 Å, it demonstrates excellent performance in thin-film transistor devices.

  11. Electrodeposited Structurally Stable V2O5 Inverse Opal Networks as High Performance Thin Film Lithium Batteries.

    Armstrong, Eileen; McNulty, David; Geaney, Hugh; O'Dwyer, Colm

    2015-12-09

    High performance thin film lithium batteries using structurally stable electrodeposited V2O5 inverse opal (IO) networks as cathodes provide high capacity and outstanding cycling capability and also were demonstrated on transparent conducting oxide current collectors. The superior electrochemical performance of the inverse opal structures was evaluated through galvanostatic and potentiodynamic cycling, and the IO thin film battery offers increased capacity retention compared to micron-scale bulk particles from improved mechanical stability and electrical contact to stainless steel or transparent conducting current collectors from bottom-up electrodeposition growth. Li(+) is inserted into planar and IO structures at different potentials, and correlated to a preferential exposure of insertion sites of the IO network to the electrolyte. Additionally, potentiodynamic testing quantified the portion of the capacity stored as surface bound capacitive charge. Raman scattering and XRD characterization showed how the IO allows swelling into the pore volume rather than away from the current collector. V2O5 IO coin cells offer high initial capacities, but capacity fading can occur with limited electrolyte. Finally, we demonstrate that a V2O5 IO thin film battery prepared on a transparent conducting current collector with excess electrolyte exhibits high capacities (∼200 mAh g(-1)) and outstanding capacity retention and rate capability.

  12. Area and energy efficient high-performance ZnO wavy channel thin-film transistor

    Hanna, Amir

    2014-09-01

    Increased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in (3.5×) increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost \\\\(1.8×) enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift. © 2014 IEEE.

  13. Wavy channel thin film transistor architecture for area efficient, high performance and low power displays

    Hanna, Amir

    2013-12-23

    We demonstrate a new thin film transistor (TFT) architecture that allows expansion of the device width using continuous fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.5× increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, ~100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers an interesting opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Wavy channel Thin Film Transistor for area efficient, high performance and low power applications

    Hanna, Amir

    2014-06-01

    We report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.4x increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, similar to 100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers a pragmatic opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications without any limitation any TFT materials.

  15. Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors

    Chuan Du

    2012-06-01

    Full Text Available New approach is presented for growth of pentacene crystalline thin film with large grain size. Modification of dielectric surfaces using a monolayer of small molecule results in the formation of pentacene thin films with well ordered large crystalline domain structures. This suggests that pentacene molecules may have significantly large diffusion constant on the modified surface. An average hole mobility about 1.52 cm2/Vs of pentacene based organic thin film transistors (OTFTs is achieved with good reproducibility.

  16. Alkylated selenophene-based ladder-type monomers via a facile route for high performance thin-film transistor applications

    Fei, Zhuping

    2017-05-26

    We report the synthesis of two new selenophene containing ladder-type monomers, cyclopentadiselenophene (CDS) and indacenodiselenophene (IDSe), via a twofold and fourfold Pd catalyzed coupling with a 1,1-diborylmethane derivative. Co-polymers with benzothiadiazole (BT) were prepared in high yield by Suzuki polymerization to afford co-polymers which exhibited excellent solubility in a range of non-chlorinated solvents. The CDS co-polymer exhibited a band gap of just 1.18 eV, which is amongst the lowest reported for donor-acceptor polymers. Thin-film transistors were fabricated using environmentally benign, non-chlorinated solvents with the CDS and IDSe co-polymers exhibiting hole mobility up to 0.15 and 6.4 cm2 /Vs, respectively. This high performance was achieved without the undesirable peak in mobility often observed at low gate voltages due to parasitic contact resistance.

  17. Alkylated selenophene-based ladder-type monomers via a facile route for high performance thin-film transistor applications

    Fei, Zhuping; Han, Yang; Gann, Eliot; Hodsden, Thomas; Chesman, Anthony; McNeill, Christopher R.; Anthopoulos, Thomas D.; Heeney, Martin

    2017-01-01

    We report the synthesis of two new selenophene containing ladder-type monomers, cyclopentadiselenophene (CDS) and indacenodiselenophene (IDSe), via a twofold and fourfold Pd catalyzed coupling with a 1,1-diborylmethane derivative. Co-polymers with benzothiadiazole (BT) were prepared in high yield by Suzuki polymerization to afford co-polymers which exhibited excellent solubility in a range of non-chlorinated solvents. The CDS co-polymer exhibited a band gap of just 1.18 eV, which is amongst the lowest reported for donor-acceptor polymers. Thin-film transistors were fabricated using environmentally benign, non-chlorinated solvents with the CDS and IDSe co-polymers exhibiting hole mobility up to 0.15 and 6.4 cm2 /Vs, respectively. This high performance was achieved without the undesirable peak in mobility often observed at low gate voltages due to parasitic contact resistance.

  18. High-performance polyamide thin-film composite nanofiltration membrane: Role of thermal treatment

    Liu, Baicang; Wang, Shuai; Zhao, Pingju; Liang, Heng; Zhang, Wen; Crittenden, John

    2018-03-01

    Nanofiltration (NF) membranes have many excellent applications (e.g., removing multivalent ions and pretreating water before reverse osmosis, RO), but their relatively high cost limits their application. Especially in recent years, researchers have paid substantial attention to reducing the cost of NF membranes. In this paper, high-performance NF membranes were fabricated using interfacial polymerization (IP) methods. The polymer concentration, IP solution concentration, and thermal treatment conditions were varied. The synthesized membranes were characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), a contact angle goniometer, X-ray photoelectron spectroscopy (XPS), attenuated total reflectance fourier transform infrared (ATR-FTIR) spectroscopy, and performance tests. The results show that water flux was significantly improved using a hot-water thermal treatment method. Our fabricated thermal-treated NF membrane had an approximately 15% higher water permeability with a value of 13.6 L/(m2 h bar) than that of the commercially available GE HL membrane with a value of 11.8 L/(m2 h bar). Our membranes had the same MgSO4 rejection as that of the GE HL membrane. We found that the thermal treatment causes the NF membrane surface to be smoother and have a high crosslinking degree.

  19. Low friction slip-rolling contacts. Influences of alternative steels, high performance thin film coatings and lubricants

    Scholz, Christian

    2013-02-01

    Due to the growing environmental awareness worldwide, containment provisions for CO{sub 2} emissions in mobility systems and increasing performance requirements the demands on mechanical systems and their materials continuously rise. These high demands require the implementation of new technical approaches, for example of light-weight strategies in automotive powertrains, and directly raise questions about the suitability of the most promising technical solution. Two basic parameters, the surface hardness of the tooth flanks and the core fatigue strength of the tooth root, illustrate exemplarily increasing demands on material grades used for gear wheels in automotive powertrains. In addition to light-weight strategies, a reduction in friction and an increase of the fatigue lifetime are two other major development directions to strive the mentioned targets. It is clear that any kind of solution must show an equal application profile, preferably an improvement, compared to the state-of-the-art solutions. For tribological systems, the following paths may offer lower friction and higher load carrying capabilities: 1. Alternative base oils and additives (such as esters, polyglycols), 2. Thin film coatings (e.g. DLC) and/or 3. Novel steel metallurgies. In previous investigations on the slip-rolling resistance of thin film coatings (a-C, ta-C, Zr(C,N)) the substrates were mainly made of the bearing steels 100Cr6H and Cronidur 30. Applying contact pressures of up to P{sub 0max} = 2.9 GPa (F{sub N} = 2,000 N), the samples were tested up to 10 million load cycles in endurance tests. The aim of the present work is to broaden the research by varying the input parameters. Newly developed engine oil mixtures, high performance thin film coatings and alternative steel solutions are intensively investigated in highly stressed slip-rolling contacts at lubricant temperatures of 120 C. Specifically, in using new steel metallurgies, i.e. the high toughness and high strength steels V300

  20. High performance batch production of LREBa2Cu3Oy using novel thin film Nd-123 seed

    Muralidhar, M.; Suzuki, K.; Fukumoto, Y.; Ishihara, A.; Tomita, M.

    2011-01-01

    A batch production for fabrication of LREBa 2 Cu 3 O y (LRE: Sm, Gd, NEG) 'LRE-123' pellets are developed in air and Ar-1% O 2 using a novel thin film Nd-123 seeds grown on MgO crystals. The SEM and XRD results conformed that the quality and orientation of the seed crystals are excellent. On the other hand, new seeds can withstand temperatures >1100 deg. C, as a result, the cold seeding process was applied even to grow Sm-123 material in Air. The trapped field observed in the best 45 mm single-grain puck of Gd-123 was in the range of 1.35 T and 0.35 T at 77.3 K and 87.3 K, respectively. The average trapped field at 77.3 K in the 24 mm diameter NEG-123 samples batch lies between 0.9 and 1 T. The maximum trapped field of 1.2 T was recorded at the sample surface. Further, the maximum trapped field of 0.23 T at 77 K was recorded in a sample with 16 mm diameter of Sm-123 with 3 mol% BaO 2 addition. As a result we made more then 130 single grain pucks within a couple of months. Taking advantage of the single grain batch processed material, we constructed self-made chilled levitation disk, which was used on the open day of railway technical research Institute. More then 150 children stood on the levitation disk and revel the experience of levitation. The present results prove that a high-performance good-quality class of LREBa 2 Cu 3 O y material can be made by using a novel thin film Nd-123 seeds.

  1. High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation.

    Jung, Su Min; Kang, Han Lim; Won, Jong Kook; Kim, JaeHyun; Hwang, ChaHwan; Ahn, KyungHan; Chung, In; Ju, Byeong-Kwon; Kim, Myung-Gil; Park, Sung Kyu

    2018-01-31

    The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- , to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm 2 /(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.

  2. High-performance polyamide thin-film-nanocomposite reverse osmosis membranes containing hydrophobic zeolitic imidazolate framework-8

    Duan, Jintang; Pan, Yichang; Pacheco Oreamuno, Federico; Litwiller, Eric; Lai, Zhiping; Pinnau, Ingo

    2015-01-01

    A hydrophobic, hydrothermally stable metal-organic framework (MOF) - zeolitic imidazolate framework-8 (ZIF-8) was successfully incorporated into the selective polyamide (PA) layer of thin-film nanocomposite (TFN) membranes for water desalination

  3. High Performance Nano-Constituent Buffer Layer Thin Films to Enable Low Cost Integrated On-the-Move Communications Systems

    Cole, M. W; Nothwang, W. D; Hubbard, C; Ngo, E; Hirsch, S

    2004-01-01

    Successful integration of paraelectric Ba1-xSrxTiO3 (BST) based thin films with affordable Si substrates has a potential significant commercial impact as the demand for high-frequency tunable devices intensifies...

  4. Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

    Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

    2017-07-01

    In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

  5. Novel cellulose ester substrates for high performance flat-sheet thin-film composite (TFC) forward osmosis (FO) membranes

    Ong, Rui Chin

    2015-01-01

    A novel hydrophilic cellulose ester with a high intrinsic water permeability and a water partition coefficient was discovered to construct membrane supports for flat-sheet thin film composite (TFC) forward osmosis (FO) membranes for water reuse and seawater desalination with high performance. The performance of TFC-FO membranes prepared from the hydrophilic cellulose ester containing a high degree of OH and a moderate degree of Pr substitutions clearly surpasses those prepared from cellulose esters and other polymers with moderate hydrophilicity. Post-treatments of TFC-FO membranes using sodium dodecyl sulfate (SDS) and glycerol followed by heat treatment further enhance the water flux without compromising the selectivity. Positron annihilation lifetime analyses have confirmed that the SDS/glycerol post-treatment increases the free volume size and fractional free volume of the polyamide selective layer. The newly developed post-treated TFC-FO membranes exhibit a remarkably high water flux up to 90 LMH when the selective layer is oriented towards the draw solution (i.e., PRO mode) using 1. M NaCl as the draw solution and DI water as the feed. For seawater desalination, the membranes display a high water flux up to 35 LMH using a 2. M NaCl draw solution. These water fluxes exceeded the water fluxes achieved by other types of FO membranes reported in literatures. © 2014 Elsevier B.V.

  6. High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

    Nag, M.; Steudel, S.; Bhoolokam, A.; Chasin, A.; Rockele, M.; Myny, K.; Maas, J.; Fritz, T.; Trube, J.; Groeseneken, G.; Heremans, P.

    2014-01-01

    In this work, we report on high-performance bottom-gate top-contact (BGTC) amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with SiO2 as an etch-stop-layer (ESL) deposited by medium frequency physical vapor deposition (mf-PVD). The TFTs show field-effect mobility (μFE) of

  7. Blending crystalline/liquid crystalline small molecule semiconductors: A strategy towards high performance organic thin film transistors

    He, Chao; He, Yaowu; Li, Aiyuan; Zhang, Dongwei; Meng, Hong

    2016-10-01

    Solution processed small molecule polycrystalline thin films often suffer from the problems of inhomogeneity and discontinuity. Here, we describe a strategy to solve these problems through deposition of the active layer from a blended solution of crystalline (2-phenyl[1]benzothieno[3,2-b][1]benzothiophene, Ph-BTBT) and liquid crystalline (2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene, C12-Ph-BTBT) small molecule semiconductors with the hot spin-coating method. Organic thin film transistors with average hole mobility approaching 1 cm2/V s, much higher than that of single component devices, have been demonstrated, mainly due to the improved uniformity, continuity, crystallinity, and stronger intermolecular π-π stacking in blend thin films. Our results indicate that the crystalline/liquid crystalline semiconductor blend method is an effective way to enhance the performance of organic transistors.

  8. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

    Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

    2016-11-02

    Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

  9. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

    Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

    2017-04-25

    Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

  10. 3D nanoporous graphene films converted from liquid-crystalline holey graphene oxide for thin and high-performance supercapacitors

    Wang, Bin; Liu, Jinzhang; Zhao, Yi; Zheng, Dezhi; Li, Yan; Sha, Jiangbo

    2018-01-01

    Holey graphene oxide (HGO) is prepared and its liquid crystal (LC) formation in water is investigated. The blade-coated LC-HGO hydrogel is hydrothermally reduced to form 3D nanoporous films used as supercapacitor electrodes. Holey graphene sheets are rumpled and interconnected to form a cellular structure with pore size around 100 nm during the reduction process. Reduced HGO films with different thicknesses are integrated into solid-state symmetric supercapacitors and their electrochemical performances are studied. High specific capacitance up to 304 F g-1 and high volumetric capacitance around 400 F cm-3 are achieved from our thin and flexible devices.

  11. Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

    Yoon, Myung-Han

    Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

  12. High-Performance Spray-Deposited Indium Doped ZnO Thin Film: Structural, Morphological, Electrical, Optical, and Photoluminescence Study

    Asl, Hassan Zare; Rozati, Seyed Mohammad

    2018-03-01

    In this study, high-quality indium doped zinc oxide thin films were deposited using the spray pyrolysis technique, and the substrate temperature varied from 450°C to 550°C with steps of 25°C with the aim of investigating the effect of substrate temperature. It was found that as the temperature increased, the resistivity of the films decreased to the extent that it was as low as 5.34 × 10-3 Ω cm for the one deposited at 500°C; however, it slightly increased for the resulting film at 550°C. Although the carrier concentration mostly increased with temperature, it appeared that the carrier mobility was the parameter mainly governing the conductivity variation. In addition, the average transparency of the deposited films at 500°C, 525°C and 550°C was around 87% (400-800 nm), which makes them outstanding transparent conductive oxide films. Moreover, the crystallite size and strain of the resulting films were estimated via the Williamson-Hall method. The results revealed a considerable reduction in the crystallite size and strain up to 500°C followed by a rise at higher substrate temperature. Based on both the surface and cross-section field emission scanning electron microscope images, the film resulting at 500°C was highly compacted and crack free, which can explain the enlargement of the carrier mobility (10.9 cm2 V-1 s-1) in this film. Finally, a detailed photoluminescence study revealed several peaks in the spectrum and the variation of the two major peaks appeared to have correlation with the carrier concentration.

  13. High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

    Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

    2018-05-01

    The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

  14. High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

    Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

    2018-02-01

    The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

  15. In situ monitoring the growth of thin-film ZnS/Zn (S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

    Saez-Araoz, R.; Abou-Ras, D. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co KG Otto-Hahn-Ring 6, 81739 Munich (Germany); Neisser, A.; Wilchelmi, K. [SULFURCELL Solartechnik GmbH Barbara-McClintock-Strasse 11, 12489 Berlin (Germany); Lux-Steiner, M.Ch. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany); Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de

    2009-02-02

    This paper highlights the crucial role that the control of the chemical bath deposition (CBD) process plays for buffer production of Cu-chalcopyrite solar-cell devices. ZnS/Zn (S,O) bilayer was deposited on CuInS{sub 2} (CIS) and Cu(In,Ga)(SSe){sub 2} (CIGSSe) and monitored using turbidity measurements of the solution. The results were correlated to the X-ray photoemission spectra of the samples obtained by interruption of the process at sequential stages. Two different feature regimes were distinguished: In the first stage, a heterogeneous reaction takes place on the absorber resulting in the formation of pure ZnS. The second stage of the process is homogeneous, and the in-situ turbidity measurement shows a loss in the transmission of light through the CBD solution. The measured ZnL3M45M45 Auger-peaks, during this second stage of the process, show a shift of the kinetic energy from pure ZnS to a solid-solution ZnS/ZnO ('Zn (S,O)') with decreasing amount of sulfur. These results are supported by the observations from Energy-filtered transmission electron microscopy. This paper also demonstrates that monitoring of the CBD process combined with the basic understanding using surface and interface analysis have contributed to improve the reproducibility and to enhance the photovoltaic performance of Cu-chalcopyrite thin-film solar modules.

  16. In situ monitoring the growth of thin-film ZnS/Zn (S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

    Saez-Araoz, R.; Abou-Ras, D.; Niesen, T.P.; Neisser, A.; Wilchelmi, K.; Lux-Steiner, M.Ch.; Ennaoui, A.

    2009-01-01

    This paper highlights the crucial role that the control of the chemical bath deposition (CBD) process plays for buffer production of Cu-chalcopyrite solar-cell devices. ZnS/Zn (S,O) bilayer was deposited on CuInS 2 (CIS) and Cu(In,Ga)(SSe) 2 (CIGSSe) and monitored using turbidity measurements of the solution. The results were correlated to the X-ray photoemission spectra of the samples obtained by interruption of the process at sequential stages. Two different feature regimes were distinguished: In the first stage, a heterogeneous reaction takes place on the absorber resulting in the formation of pure ZnS. The second stage of the process is homogeneous, and the in-situ turbidity measurement shows a loss in the transmission of light through the CBD solution. The measured ZnL3M45M45 Auger-peaks, during this second stage of the process, show a shift of the kinetic energy from pure ZnS to a solid-solution ZnS/ZnO ('Zn (S,O)') with decreasing amount of sulfur. These results are supported by the observations from Energy-filtered transmission electron microscopy. This paper also demonstrates that monitoring of the CBD process combined with the basic understanding using surface and interface analysis have contributed to improve the reproducibility and to enhance the photovoltaic performance of Cu-chalcopyrite thin-film solar modules

  17. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Final Technical Report (October 2000 - December 2003)

    Jie Guan; Nguyen Minh

    2003-01-01

    This report summarizes the results of the work conducted under the program: ''Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells'' under contract number DE-AC26-00NT40711. The program goal is to advance materials and processes that can be used to produce economical, high-performance solid oxide fuel cells (SOFC) capable of achieving extraordinary high power densities at reduced temperatures. Under this program, anode-supported thin electrolyte based on lanthanum gallate (LSMGF) has been developed using tape-calendering process. The fabrication parameters such as raw materials characteristics, tape formulations and sintering conditions have been evaluated. Dense anode supported LSGMF electrolytes with thickness range of 10-50 micron have been fabricated. High performance cathode based on Sr 0.5 Sm 0.5 CoO 3 (SSC) has been developed. Polarization of ∼0.23 ohm-cm 2 has been achieved at 600 C with Sr 0.5 Sm 0.5 CoO 3 cathode. The high-performance SSC cathode and thin gallate electrolyte have been integrated into single cells and cell performance has been characterized. Tested cells to date generally showed low performance because of low cell OCVs and material interactions between NiO in the anode and lanthanum gallate electrolyte

  18. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors.

    Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae-Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang-Suk; Kim, Yun Ho

    2017-06-14

    We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al 2 O 3 ), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al 2 O 3 -deposited KPI film. After the surface treatment by ODPA/α-Al 2 O 3 , the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C 10 ), was increased. Ph-BTBT-C 10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C 10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm 2 V -1 s -1 to 1.26 ± 0.06 cm 2 V -1 s -1 , after the surface treatment. The surface treatment of α-Al 2 O 3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO 2 gate insulators.

  19. Dataset demonstrating the modeling of a high performance Cu(In,GaSe2 absorber based thin film photovoltaic cell

    Md. Asaduzzaman

    2017-04-01

    Full Text Available The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage (Voc, short circuit current density Jsc, fill factor (FF, efficiency (η, and collection efficiency ηc have been analyzed.

  20. High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

    Ahn, Min-Ju; Cho, Won-Ju

    2017-10-01

    In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

  1. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Joong-Won Shin

    2017-07-01

    Full Text Available In this paper, we investigate a low thermal budget post-deposition-annealing (PDA process for amorphous In-Ga-ZnO (a-IGZO oxide semiconductor thin-film-transistors (TFTs. To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA and rapid thermal annealing (RTA methods were applied, and the results were compared with those of the conventional annealing (CTA method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C and short annealing time (2 min because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  2. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Shin, Joong-Won; Cho, Won-Ju

    2017-07-01

    In this paper, we investigate a low thermal budget post-deposition-annealing (PDA) process for amorphous In-Ga-ZnO (a-IGZO) oxide semiconductor thin-film-transistors (TFTs). To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA) and rapid thermal annealing (RTA) methods were applied, and the results were compared with those of the conventional annealing (CTA) method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C) and short annealing time (2 min) because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  3. High performance inkjet-printed metal oxide thin film transistors via addition of insulating polymer with proper molecular weight

    Sun, Dawei; Chen, Cihai; Zhang, Jun; Wu, Xiaomin; Chen, Huipeng; Guo, Tailiang

    2018-01-01

    Fabrication of metal oxide thin film transistor (MOTFT) arrays using the inkjet printing process has caused tremendous interest for low-cost and large-area flexible electronic devices. However, the inkjet-printed MOTFT arrays usually exhibited a non-uniform geometry due to the coffee ring effect, which restricted their commercial application. Therefore, in this work, a strategy is reported to control the geometry and enhance device performance of inkjet-printed MOTFT arrays by the addition of an insulating polymer to the precursor solution prior to film deposition. Moreover, the impact of the polymer molecular weight (MW) on the geometry, chemical constitution, crystallization, and MOTFT properties of inkjet-printed metal oxide depositions was investigated. The results demonstrated that with an increase of MW of polystyrene (PS) from 2000 to 200 000, the coffee ring was gradually faded and the coffee ring effect was completely eliminated when MW reached 200 000, which is associated with the enhanced viscosity with the insulating polymer, providing a high resistance to the outward capillary flow, which facilitated the depinning of the contact line, leading to the elimination of the coffee ring. More importantly, the carrier mobility increased significantly from 4.2 cm2 V-1 s-1 up to 13.7 cm2 V-1 s-1 as PS MW increased from 2000 to 200 000, which was about 3 times that of the pristine In2O3 TFTs. Grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy results indicated that PS doping of In2O3 films not only frustrated crystallization but also altered chemical constitution by enhancing the formation of the M-O structure, both of which facilitated the carrier transport. These results demonstrated that the simple polymer additive process provides a promising method that can efficiently control the geometry of MO arrays during inkjet printing and maximize the device performance of MOTFT arrays, which showed great potential for the application in next

  4. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

    Jiawei Zhang

    2017-03-01

    Full Text Available Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO and p-type tin monoxide (SnO is presented. The IGZO thin-film transistor (TFT shows a linear mobility of 11.9 cm2/(V∙s and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

  5. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

    Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

    2017-03-21

    Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

  6. High-performance polyamide thin-film-nanocomposite reverse osmosis membranes containing hydrophobic zeolitic imidazolate framework-8

    Duan, Jintang

    2015-02-01

    A hydrophobic, hydrothermally stable metal-organic framework (MOF) - zeolitic imidazolate framework-8 (ZIF-8) was successfully incorporated into the selective polyamide (PA) layer of thin-film nanocomposite (TFN) membranes for water desalination. The potential advantages of ZIF-8 over classic hydrophilic zeolite used in TFNs include: i) theoretically faster water transport within the framework and ii) better compatibility with the PA matrix. The TFN membranes were characterized with SEM, TEM, AFM, XPS, water contact angle measurements and reverse osmosis tests under 15.5bar hydraulic pressure with 2000ppm NaCl solution. Lab-made, nano-sized (~200nm) ZIF-8 increased water permeance to 3.35±0.08L/m2·h·bar at 0.4% (w/v) loading, 162% higher than the pristine PA membranes; meanwhile, high NaCl rejection was maintained. The TFN surface was less crosslinked and more hydrophilic than that of the pristine PA. A filler encapsulation mechanism was proposed for the effects of filler on TFN membrane surface morphology and properties. This study experimentally verified the potential use of ZIF-8 in advanced TFN RO membranes.

  7. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

    Yeon Kwon, Jang; Kyeong Jeong, Jae

    2015-01-01

    This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed. (invited review)

  8. thin films

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  9. High-performance thermal sensitive W-doped VO{sub 2}(B) thin film and its identification by first-principles calculations

    Wan, Dongyun; Xiong, Ping; Chen, Lanli [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Shi, Siqi, E-mail: sqshi@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Ishaq, Ahmad [National Center for Physics, Quaid-I-Azam University, Islamabad 44000 (Pakistan); Luo, Hongjie [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Gao, Yanfeng, E-mail: yfgao@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China)

    2017-03-01

    Graphical abstract: VO{sub 2}(B) thin films with high TCR and suitable resistance were first achieved by W doping. The mechanism for performance improvement was studied by first-principles calculations. The two-dimensional octahedral structure of VO{sub 2}(B) favors the strain control with W-doping for achieving a large TCR, which overcomes the contradiction between the high conductivity and large TCR generated by dopants in VO{sub 2}(M). - Highlights: • High performance W-doped VO{sub 2}(B) thin films were first achieved by co-sputtering. • Mechanism for performance improvement was studied by first-principles calculations. • The two-dimensional octahedral structure of VO{sub 2} (B) favors the strain control. • Achieved VO{sub 2} films possess high thermal sensitivity (TCR: −3.9%/K & R{sub 0}: 32.7 kΩ). - Abstract: VO{sub 2}(B) is currently a preferred phase structure for the application as bolometer material, which, however, suffers from low temperature-coefficient-of-resistance (TCR) values and large resistances. Here we present the combined experimental and first-principles calculations study on both doped and undoped VO{sub 2}(B) thin films enabling us to attain high TCR (−3.9%/k) and suitable square-resistance (32.7 kΩ) by controlled W doping employing the widely used magnetron sputtering technique. The TCR value is 50% larger than reported ones at the similar resistance. The underlying microscopic mechanism for the performance improvement was studied and results indicated that the introduction of extra electrons and the variation in the band structure resulting from the incorporation of W{sup 6+} ions in the VO{sub 2}(B) crystal lattice contribute to the enhancement of the electronic conductivity. Moreover, the special two-dimensional octahedral structure of monoclinic (C2/m) B-phase VO{sub 2} favors the strain control with W-doping for achieving a large TCR, which overcomes the analogous predicament between the high conductivity and large TCR

  10. Novel cellulose ester substrates for high performance flat-sheet thin-film composite (TFC) forward osmosis (FO) membranes

    Ong, Rui Chin; Chung, Neal Tai-Shung; de Wit, Jos S.; Helmer, Bradley J.

    2015-01-01

    and seawater desalination with high performance. The performance of TFC-FO membranes prepared from the hydrophilic cellulose ester containing a high degree of OH and a moderate degree of Pr substitutions clearly surpasses those prepared from cellulose esters

  11. High-performance thin-film-transistors based on semiconducting-enriched single-walled carbon nanotubes processed by electrical-breakdown strategy

    Aïssa, B., E-mail: aissab@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada); Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1" è" r" e Avenue, Val d’Or, Québec J9P 1Y3 (Canada); Habib, M.A. [Computer Sciences and Engineering Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Abdul-Hafidh, E.H. [High Energy Physics Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Rosei, F. [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2015-02-15

    Highlights: • We selectively burn metallic single wall carbon nanotubes (SWCNT) by electrical breakdown. • We successfully achieve a semiconducting enriched-SWCNT in TFT configuration. • High performance, like On/Off of 10{sup 5} and a subthreshold swing of 165 mV/decades were obtained. • After PMMA coating, the SWCNT–TFTs were found stables for more than 4 months. - Abstract: Over the past two decades, among remarkable variety of nanomaterials, single-walled carbon nanotubes (SWCNTs) remain the most intriguing and uniquely well suited materials for applications in high-performance electronics. The most advanced technologies require the ability to form purely semiconducting SWCNTs. Here, we report on our strategy based on the well known progressive electrical breakdown process that offer this capability and serves as highly efficient means for selectively removing metallic carbon nanotubes from electronically heterogeneous random networks, deposited on silicon substrates in a thin film transistor (TFT) configuration. We demonstrate the successful achievement of semiconducting enriched-SWCNT networks in TFT scheme that reach On/Off switching ratios of ∼100,000, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades. The obtained TFT devices were then protected with thin film poly(methyl methacrylate) (PMMA) to keep the percolation level of the SWCNTs network spatially and temporally stable, while protecting it from atmosphere exchanges. TFT devices were found to be air-stable and maintained their excellent characteristics in ambient atmosphere for more than 4 months. This approach could work as a platform for future nanotube-based nanoelectronics.

  12. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2012-01-01

    decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher

  13. Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

    Ning, Honglong; Zeng, Yong; Kuang, Yudi; Zheng, Zeke; Zhou, Panpan; Yao, Rihui; Zhang, Hongke; Bao, Wenzhong; Chen, Gang; Fang, Zhiqiang; Peng, Junbiao

    2017-08-23

    Integrating biodegradable cellulose nanopaper into oxide thin-film transistors (TFTs) for next generation flexible and green flat panel displays has attracted great interest because it offers a viable solution to address the rapid increase of electronic waste that poses a growing ecological problem. However, a compromise between device performance and thermal annealing remains an obstacle for achieving high-performance nanopaper TFTs. In this study, a high-performance bottom-gate IGZO/Al 2 O 3 TFT with a dual-layer channel structure was initially fabricated on a highly transparent, clear, and ultrasmooth nanopaper substrate via conventional physical vapor deposition approaches, without further thermal annealing processing. Purified nanofibrillated cellulose with a width of approximately 3.7 nm was used to prepare nanopaper with excellent optical properties (92% transparency, 0.85% transmission haze) and superior surface roughness (Rq is 1.8 nm over a 5 × 5 μm 2 scanning area). More significantly, a bilayer channel structure (IGZO/Al 2 O 3 ) was adopted to fabricate high performance TFT on this nanopaper substrate without thermal annealing and the device exhibits a saturation mobility of 15.8 cm 2 /(Vs), an I on /I off ratio of 4.4 × 10 5 , a threshold voltage (V th ) of -0.42 V, and a subthreshold swing (SS) of 0.66 V/dec. The room-temperature fabrication of high-performance IGZO/Al 2 O 3 TFTs on such nanopaper substrate without thermal annealing treatment brings industry a step closer to realizing inexpensive, flexible, lightweight, and green paper displays.

  14. High-performance flexible thin-film transistors fabricated using print-transferrable polycrystalline silicon membranes on a plastic substrate

    Qin, Guoxuan; Yuan, Hao-Chih; Ma, Zhenqiang; Yang, Hongjun; Zhou, Weidong

    2011-01-01

    Inexpensive polycrystalline Si (poly-Si) with large grain size is highly desirable for flexible electronics applications. However, it is very challenging to directly deposit high-quality poly-Si on plastic substrates due to processing constrictions, such as temperature tolerance and residual stress. In this paper, we present our study on poly-Si membranes that are stress free and most importantly, are transferrable to any substrate including a low-temperature polyethylene terephthalate (PET) substrate. We formed poly-Si-on-insulator by first depositing small-grain size poly-Si on an oxidized Si wafer. We then performed high-temperature annealing for recrystallization to obtain larger grain size. After selective doping on the poly-Si-on-insulator, buried oxide was etched away. By properly patterning the poly-Si layer, residual stress in the released poly-Si membranes was completely relaxed. The flat membrane topology allows the membranes to be print transferred to any substrates. High-performance TFTs were demonstrated on the transferred poly-Si membranes on a PET substrate

  15. High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

    Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

    2016-09-01

    We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

  16. High-Performance Thin-Film-Nanocomposite Cation Exchange Membranes Containing Hydrophobic Zeolitic Imidazolate Framework for Monovalent Selectivity

    Jian Li

    2018-05-01

    Full Text Available Zeolitic imidazolate framework-8 (ZIF-8 offers good hydrothermal, chemical, and thermal stabilities, and is therefore of interest in membrane synthesis. In this work, an interfacial polymerization (IP method was applied by anchoring ZIF-8 to the skin layer of thin-film nanocomposite (TFN membranes in order to obtain monovalent selectivity in electrodialysis. Organic trimesoyl chloride (TMC, 0.1 wt % solutions and aqueous m-phenyl diamine (MPD, 2% w/v solutions were used during the interfacial polymerization process. A range of polyamine (PA/ZIF-8 based membranes was fabricated by varying the concentration of ZIF-8 in the organic solution. The properties of the primary and modified membrane were characterized by scanning electron microscope (SEM, energy dispersive X-ray analysis (EDAX, atomic force microscopy (AFM, water uptake, ion exchange capacity, and contact angle measurements. No significant changes of the surface structure of the PA/ZIF-8 based membranes were observed. Nevertheless, the presence of ZIF-8 under the PA layer plays a key role in the separation process. For single salt solutions that were applied in electrodialysis (ED, faster transport of Na+ and Mg2+ was obtained after introducing the ZIF-8 nanoparticles, however, the desalination efficiency remained constant. When the hybrid membranes were applied to electrodialysis for binary mixtures containing Na+ as well as Mg2+, it was demonstrated that the monovalent selectivity and Na+ flux were enhanced by a higher ZIF-8 loading.

  17. High Performance Thin-film Composite Membranes with Mesh-Reinforced Hydrophilic Sulfonated Polyphenylenesulfone (sPPSU) Substrates for Osmotically Driven Processes

    Han, Gang; Zhao, Baiwang; Fu, Fengjiang; Chung, Neal Tai-Shung; Weber, Martin; Staudt, Claudia; Maletzko, Christian

    2015-01-01

    We have for the first time combined the strength of hydrophilic sulfonated material and thin woven open-mesh via a continuous casting process to fabricate mesh-reinforced ultrafiltration (UF) membrane substrates with desirable structure and morphology for the development of high-performance thin-film composite (TFC) osmosis membranes. A new sulfonated polyphenylenesulfone (sPPSU) polymer with super-hydrophilic nature is used as the substrate material, while a hydrophilic polyester (PET) open-mesh with a small thickness of 45 μm and an open area of 44.5% is employed as the reinforcing fabric during membrane casting. The newly developed sPPSU-TFC membranes not only exhibit a fully sponge-like cross-section morphology, but also possess excellent water permeability (A=3.4–3.7 L m−2 h−1 bar−1) and selectivity toward NaCl (B=0.10–0.23 L m−2 h−1). Due to the hydrophilic nature and low membrane thickness of 53–67 μm, the PET-woven reinforced sPPSU substrates have remarkably small structural parameters (S) of less than 300 μm. The sPPSU-TFC membranes thereby display impressive water fluxes (Jw) of 69.3–76.5 L m−2 h−1 and 38.7–47.0 L m−2 h−1 against a deionized water feed using 2 M NaCl as the draw solution under pressure retarded osmosis (PRO) and forward osmosis (FO) modes, respectively. This performance surpasses the state-of-the-art commercially available FO membranes. The sPPSU-TFC membranes also show exciting performance for synthetic seawater (3.5 wt% NaCl) desalination and water reclamation from real municipal wastewater. The newly developed PET-woven sPPSU-TFC membranes may have great potential to become a new generation membrane for osmotically driven processes.

  18. High Performance Thin-film Composite Membranes with Mesh-Reinforced Hydrophilic Sulfonated Polyphenylenesulfone (sPPSU) Substrates for Osmotically Driven Processes

    Han, Gang

    2015-12-17

    We have for the first time combined the strength of hydrophilic sulfonated material and thin woven open-mesh via a continuous casting process to fabricate mesh-reinforced ultrafiltration (UF) membrane substrates with desirable structure and morphology for the development of high-performance thin-film composite (TFC) osmosis membranes. A new sulfonated polyphenylenesulfone (sPPSU) polymer with super-hydrophilic nature is used as the substrate material, while a hydrophilic polyester (PET) open-mesh with a small thickness of 45 μm and an open area of 44.5% is employed as the reinforcing fabric during membrane casting. The newly developed sPPSU-TFC membranes not only exhibit a fully sponge-like cross-section morphology, but also possess excellent water permeability (A=3.4–3.7 L m−2 h−1 bar−1) and selectivity toward NaCl (B=0.10–0.23 L m−2 h−1). Due to the hydrophilic nature and low membrane thickness of 53–67 μm, the PET-woven reinforced sPPSU substrates have remarkably small structural parameters (S) of less than 300 μm. The sPPSU-TFC membranes thereby display impressive water fluxes (Jw) of 69.3–76.5 L m−2 h−1 and 38.7–47.0 L m−2 h−1 against a deionized water feed using 2 M NaCl as the draw solution under pressure retarded osmosis (PRO) and forward osmosis (FO) modes, respectively. This performance surpasses the state-of-the-art commercially available FO membranes. The sPPSU-TFC membranes also show exciting performance for synthetic seawater (3.5 wt% NaCl) desalination and water reclamation from real municipal wastewater. The newly developed PET-woven sPPSU-TFC membranes may have great potential to become a new generation membrane for osmotically driven processes.

  19. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

    Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

    2015-08-12

    For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

  20. Facile chemical synthesis of nanoporous layered δ-MnO{sub 2} thin film for high-performance flexible electrochemical capacitors

    Hu, Yu; Wang, Jun; Jiang, Xionghua; Zheng, Yanfeng [The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Chen, Zhenxing, E-mail: chenzx65@mail.sysu.edu.cn [The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

    2013-04-15

    Layered δ-MnO{sub 2} thin films with a three-dimensional nanostructure are successfully fabricated on stainless steel foil substrates for flexible electrochemical capacitors by a facile and effective chemical bath deposition technology from ethanol and potassium permanganate solution at 15 °C. The as-prepared thin films display nanoporous morphology and a water contact angle of 20°. Energy-dispersive X-ray spectroscopy, X-ray diffraction, and Fourier transform infrared spectroscopy analyses reveal that the thin films are composed of δ-MnO{sub 2}. Electrochemical data demonstrate that the δ-MnO{sub 2} thin film electrodes can deliver a high special capacitance of 447 F/g at 2 mV/s, and provide a good capacitance retention ratio of 87% after 1000 continuous cycles at 10 mV/s in 0.5 M Na{sub 2}SO{sub 4}. Compressive and tensile bending tests show that the as-prepared electrodes can steadily work over a wide range of applied curvatures between −2.5 cm{sup −1} (tension) and 2.5 cm{sup −1} (compression). Only a small decrease in special capacitance (0.9% at a curvature of 2.5 cm{sup −1} under compressive strain, or 1.2% at a curvature of −2.5 cm{sup −1} under tensile strain) is observed even after bending for 200 cycles, indicating the excellent mechanical flexibility and electrochemical stability of the δ-MnO{sub 2} thin film electrodes.

  1. Fabrication of high-performance InGaZnOx thin film transistors based on control of oxidation using a low-temperature plasma

    Takenaka, Kosuke; Endo, Masashi; Uchida, Giichiro; Setsuhara, Yuichi

    2018-04-01

    This work demonstrated the low-temperature control of the oxidation of Amorphous InGaZnOx (a-IGZO) films using inductively coupled plasma as a means of precisely tuning the properties of thin film transistors (TFTs) and as an alternative to post-deposition annealing at high temperatures. The effects of the plasma treatment of the as-deposited a-IGZO films were investigated by assessing the electrical properties of TFTs incorporating these films. A TFT fabricated using an a-IGZO film exposed to an Ar-H2-O2 plasma at substrate temperatures as low as 300 °C exhibited the best performance, with a field effect mobility as high as 42.2 cm2 V-1 s-1, a subthreshold gate voltage swing of 1.2 V decade-1, and a threshold voltage of 2.8 V. The improved transfer characteristics of TFTs fabricated with a-IGZO thin films treated using an Ar-H2-O2 plasma are attributed to the termination of oxygen vacancies around Ga and Zn atoms by OH radicals in the gas phase.

  2. High Performance Flexible Actuator of Urchin-Like ZnO Nanostructure/Polyvinylenefluoride Hybrid Thin Film with Graphene Electrodes for Acoustic Generator and Analyzer.

    Cheong, Oug Jae; Lee, James S; Kim, Jae Hyun; Jang, Jyongsik

    2016-05-01

    A bass frequency response enhanced flexible polyvinylidene fluoride (PVDF) based thin film acoustic actuator is successfully fabricated. High concentrations of various zinc oxide (ZnO) is embedded in PVDF matrix, enhancing the β phase content and the dielectric property of the composite thin film. ZnO acts as a nucleation agent for the crystallization of PVDF. A chemical vapor deposition grown graphene is used as electrodes, enabling high electron mobility for the distortion free acoustic signals. The frequency response of the fabricated acoustic actuator is studied as a function of the film thickness and filler content. The optimized film has a thickness of 80 μm with 30 wt% filler content and shows 72% and 42% frequency response enhancement in bass and midrange compared to the commercial PVDF, respectively. Also, the total harmonic distortion decreases to 82% and 74% in the bass and midrange regions, respectively. Furthermore, the composite film shows a promising potential for microphone applications. Most of all, it is demonstrated that acoustic actuator performance is strongly influenced by degree of PVDF crystalline. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

    Ahn, Byung Du [School of Electrical and Electronic Engineering, 50, Yonsei University, Seoul 120-749 (Korea, Republic of); Park, Jin-Seong [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, K. B., E-mail: kbchung@dongguk.edu [Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2014-10-20

    Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.

  4. CRADA with United Solar Technologies and Pacific Northwest Laboratory (PNL-021): Thin film materialsfor low-cost high performance solar concentrators

    Martin, P. M.; Affinito, J. D.; Gross, M. E.; Bennett, W. D.

    1995-03-01

    The objectives of this project were to develop and evaluate promising low-cost dielectric and polymer-protected thin-film reflective metal coatings to be applied to preformed continuously-curved solar reflector panels to enhance their solar reflectance, and to demonstrate protected solar reflective coatings on preformed solar concentrator panels. The opportunity for this project arose from a search by United Solar Technologies (UST) for organizations and facilities capable of applying reflective coatings to large preformed panels. PNL was identified as being uniquely qualified to participate in this collaborative project.

  5. Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits

    Hanna, Amir; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2015-01-01

    We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.

  6. Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits

    Hanna, Amir

    2015-08-12

    We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.

  7. Interface engineering in high-performance low-voltage organic thin-film transistors based on 2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes.

    Amin, Atefeh Y; Reuter, Knud; Meyer-Friedrichsen, Timo; Halik, Marcus

    2011-12-20

    We investigated two different (2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes; C(n)-BTBT-C(n), where n = 12 or 13) semiconductors in low-voltage operating thin-film transistors. By choosing functional molecules in nanoscaled hybrid dielectric layers, we were able to tune the surface energy and improve device characteristics, such as leakage current and hysteresis. The dipolar nature of the self-assembled molecules led to a shift in the threshold voltage. All devices exhibited high charge carrier mobilities of 0.6-7.0 cm(2) V(-1) s(-1). The thin-film morphology of BTBT was studied by means of atomic force microscopy (AFM), presented a dependency upon the surface energy of the self-assembled monolayer (SAM) hybrid dielectrics but not upon the device performance. The use of C(13)-BTBT-C(13) on hybrid dielectrics of AlO(x) and a F(15)C(18)-phosphonic acid monolayer led to devices with a hole mobility of 1.9 cm(2) V(-1) s(-1) at 3 V, on/off ratio of 10(5), small device-device variation of mobility, and a threshold voltage of only -0.9 V, thus providing excellent characteristics for further integration. © 2011 American Chemical Society

  8. Vacuum-Assisted Low-Temperature Synthesis of Reduced Graphene Oxide Thin-Film Electrodes for High-Performance Transparent and Flexible All-Solid-State Supercapacitors.

    Aytug, Tolga; Rager, Matthew S; Higgins, Wesley; Brown, Forrest G; Veith, Gabriel M; Rouleau, Christopher M; Wang, Hui; Hood, Zachary D; Mahurin, Shannon M; Mayes, Richard T; Joshi, Pooran C; Kuruganti, Teja

    2018-04-04

    Simple and easily integrated design of flexible and transparent electrode materials affixed to polymer-based substrates hold great promise to have a revolutionary impact on the functionality and performance of energy storage devices for many future consumer electronics. Among these applications are touch sensors, roll-up displays, photovoltaic cells, health monitors, wireless sensors, and wearable communication devices. Here, we report an environmentally friendly, simple, and versatile approach to produce optically transparent and mechanically flexible all-solid-state supercapacitor devices. These supercapacitors were constructed on tin-doped indium oxide coated polyethylene terephthalate substrates by intercalation of a polymer-based gel electrolyte between two reduced graphene oxide (rGO) thin-film electrodes. The rGO electrodes were fabricated simply by drop-casting of graphene oxide (GO) films, followed by a novel low-temperature (≤250 °C) vacuum-assisted annealing approach for the in situ reduction of GO to rGO. A trade-off between the optical transparency and electrochemical performance is determined by the concentration of the GO in the initial dispersion, whereby the highest capacitance (∼650 μF cm -2 ) occurs at a relatively lower optical transmittance (24%). Notably, the all-solid-state supercapacitors demonstrated excellent mechanical flexibility with a capacity retention rate above 90% under various bending angles and cycles. These attributes underscore the potential of the present approach to provide a path toward the realization of thin-film-based supercapacitors as flexible and transparent energy storage devices for a variety of practical applications.

  9. Thin films

    Strongin, M.; Miller, D.L.

    1976-01-01

    This article reviews the phenomena that occur in films from the point of view of a solid state physicist. Films form the basis for many established and developing technologies. Metal layers have always been important for optical coatings and as protective coatings. In the most sophisticated cases, films and their interaction on silicon surfaces form the basis of modern electronic technology. Films of silicon, GaAs and composites of these materials promise to lead to practical photovoltaic devices

  10. High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

    Yingtao Xie

    2018-01-01

    Full Text Available A facile solution process was introduced for the preparation of IGZO thin films via a metal–organic decomposition (MOD method. The IGZO ink was synthesized by mixing the solutions of gallium acetylacetonate [Ga(C5H7O23], zinc acetylacetonate hydrate [Zn(C5H7O22·xH2O] dissolved in ethanol, and indium acetylacetonate [In(C5H7O23] dissolved in tetrahydrofuran (THF. The deposited films by spin-coating were annealed at moderate process temperature (≤500°C. The relationship between device performance and postannealing temperature was studied. The result demonstrated that mobility of IGZO TFT increased as the annealing temperature increased. Based on the analysis of O 1s statement, the annealing temperature can influence the number of oxygen vacancy to further affect the carrier centration. In addition, the IGZO TFT devices with various Ga molar ratios were compared to demonstrate the influence of the Ga addition. The result demonstrated that the saturated mobilities (μe decreased and VTH shifted to positive voltage as the Ga molar ratio was increased. It is likely that Ga can offer stronger chemical bonds between metal and oxygen that reduced the concentration of free carriers and thus help reducing VTH. As a result, the optimized performance of IGZO TFT with the mobility of 3.4 cm2V−1s−1 showed the MOD process was a promising approach.

  11. Dual-Phase CsPbBr3 -CsPb2 Br5 Perovskite Thin Films via Vapor Deposition for High-Performance Rigid and Flexible Photodetectors.

    Tong, Guoqing; Li, Huan; Li, Danting; Zhu, Zhifeng; Xu, Enze; Li, Guopeng; Yu, Linwei; Xu, Jun; Jiang, Yang

    2018-02-01

    Inorganic perovskites with special semiconducting properties and structures have attracted great attention and are regarded as next generation candidates for optoelectronic devices. Herein, using a physical vapor deposition process with a controlled excess of PbBr 2 , dual-phase all-inorganic perovskite composite CsPbBr 3 -CsPb 2 Br 5 thin films are prepared as light-harvesting layers and incorporated in a photodetector (PD). The PD has a high responsivity and detectivity of 0.375 A W -1 and 10 11 Jones, respectively, and a fast response time (from 10% to 90% of the maximum photocurrent) of ≈280 µs/640 µs. The device also shows an excellent stability in air for more than 65 d without encapsulation. Tetragonal CsPb 2 Br 5 provides satisfactory passivation to reduce the recombination of the charge carriers, and with its lower free energy, it enhances the stability of the inorganic perovskite devices. Remarkably, the same inorganic perovskite photodetector is also highly flexible and exhibits an exceptional bending performance (>1000 cycles). These results highlight the great potential of dual-phase inorganic perovskite films in the development of optoelectronic devices, especially for flexible device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Pinning in high performance MgB{sub 2} thin films and bulks: Role of Mg-B-O nano-scale inhomogeneities

    Prikhna, Tatiana, E-mail: prikhna@mail.ru [Institute for Superhard Materials of the National Academy of Sciences of Ukraine , 2, Avtozavodskaya Str. , Kiev 07074 (Ukraine); Shapovalov, Andrey [Institute for Superhard Materials of the National Academy of Sciences of Ukraine , 2, Avtozavodskaya Str. , Kiev 07074 (Ukraine); Eisterer, Michael [Atominstitut, Vienna University of Technology, Stadionallee 2, 1020 Vienna (Austria); Shaternik, Vladimir [G.V. Kurdyumov Institute for Metal Physics of the National Academy of Sciences of Ukraine, 36 Academician Vernadsky blvd., Kiev, 03680 (Ukraine); Goldacker, Wilfried [Karlsruhe Institute of Technology (KIT), 76344 Eggenstein (Germany); Weber, Harald W. [Atominstitut, Vienna University of Technology, Stadionallee 2, 1020 Vienna (Austria); Moshchil, Viktor; Kozyrev, Artem; Sverdun, Vladimir [Institute for Superhard Materials of the National Academy of Sciences of Ukraine , 2, Avtozavodskaya Str. , Kiev 07074 (Ukraine); Boutko, Viktor [Donetsk Institute for Physics and Engineering named after O.O. Galkin of the National Academy of Sciences of Ukraine, R. Luxemburg str.72, Donetsk-114, 83114 (Ukraine); Grechnev, Gennadiy [B. Verkin Institute for Low Temperature Physics of the National Academy of Sciences of Ukraine, 47, Prospekt Nauky, Kharkiv 61103 (Ukraine); Gusev, Alexandr [Donetsk Institute for Physics and Engineering named after O.O. Galkin of the National Academy of Sciences of Ukraine, R. Luxemburg str.72, Donetsk-114, 83114 (Ukraine); Kovylaev, Valeriy; Shaternik, Anton [Institute for Superhard Materials of the National Academy of Sciences of Ukraine , 2, Avtozavodskaya Str. , Kiev 07074 (Ukraine)

    2017-02-15

    Highlights: • Pinning in MgB{sub 2} depends on the Mg-B-O nano-scaled inhomogeneities. • Finer oxygen-enriched inhomogeneities is the reason of the higher J{sub c} in MgB{sub 2} thin films as compared to bulk. • The results of DOS calculations for MgB{sub 2-x}O{sub x} compounds demonstrate that they have metal-like behavior. • Ordered oxygen distribution in MgB{sub 2} (in pairs or zigzags) reduces binding energy. - Abstract: The comparison of nano-crystalline MgB{sub 2} oxygen-containing thin film (140 nm) and highly dense bulk materials showed that the critical current density, J{sub c}, depends on the distribution of Mg-B-O nano-scale inhomogeneities. It has been shown that MgB{sub 2} bulks with high J{sub c} in low (∼10{sup 6} A/cm{sup 2} in 0-1 T at 10 K) and medium magnetic fields contain MgB{sub 0.6-0.8}O{sub 0.8-0.9} nano-inclusions, where δT{sub c} or a combined δT{sub c} (dominant) / δ{sub l} pinning mechanism prevails, while in bulk MgB{sub 2} with high J{sub c} in high magnetic fields (B{sub irr}(18.5 K) = 15 T, B{sub c2}(0 K) = 42.1 T) MgB{sub 1.2-2.7}O{sub 1.8-2.5} nano-layers are present and δ{sub l} pinning prevails. The structure of oxygen-containing films with high J{sub c} in low and high magnetic fields (J{sub c} (0 T) = 1.8 × 10{sup 7} A/cm{sup 2} and J{sub c} (5 T) = 2 × 10{sup 6} A/cm{sup 2} at 10 K) contains very fine oxygen-enriched Mg-B-O inhomogeneities and δ{sub l} pinning is realized. The results of DOS calculations in MgB{sub 2-x}O{sub x} cells for x = 0, 0.125, 0.25, 0.5, 1 demonstrate that all compounds are conductors with metal-like behaviour. In the case of ordered oxygen substitution for boron the binding energy, E{sub b}, does not increase sufficiently as compared with that for MgB{sub 2}, while when oxygen atoms form zigzag chains the calculated E{sub b} is even lower (E{sub b} = −1.15712 Ry).

  13. Thin film processes II

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  14. Pyrolyzed thin film carbon

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  15. High-performance electrochromic device based on nanocellulose/polyaniline and nanocellulose/poly(3,4-ethylenedioxythiophene) composite thin films

    Zhang, Sihang; Fu, Runfang; Du, Zoufei; Jiang, Mengjin; Zhou, Mi; Gu, Yingchun; Chen, Sheng

    2017-07-01

    With the development of nanotechnology, nanocomposite materials based on renewable resources are the focus of this research. Nanocellulose was prepared using sulfuric acid to swell cotton pulp, following with extensive ultrasonication. Nanocellulose/polyaniline (NC/PANI) and nanocellulose/poly(3,4-ethylenedioxythiophene) (NC/PEDOT) nanocomposites with core/shell structure were manufactured by in situ polymerization. The film-forming properties and electrochromic properties of PANI and PEDOT were significantly improved using the nanocellulose as matrix. NC/PANI and NC/PEDOT composite films were studied in single and dual electrochromic devices (ECDs). A viscous gel electrolyte (GE) was used in ECDs. The architectural design of single and dual device was ITO/NC-PANI/GE/ITO or ITO/NC-PEDOT/GE/ITO and ITO/NC-PANI/GE/NC-PEDOT/ITO, respectively. The dual ECD based on NC/PANI and NC/PEDOT composite films exhibited a higher color contrast (30.3%), shortest response time (1.5 s for bleaching and 1.9 s for coloring), largest coloration efficiency (241.6 C/cm2), and best cycling stability (over 150 cycles) compared with the single devices.

  16. Ceramic Composite Thin Films

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  17. Thin Film & Deposition Systems (Windows)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  18. Biomimetic thin film synthesis

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  19. Thin film device applications

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  20. Thin film tritium dosimetry

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  1. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  2. Thin films and nanomaterials

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  3. Thin Film Microbatteries

    Dudney, Nancy J.

    2008-01-01

    Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

  4. Optical thin film deposition

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  5. Thin Film Photovoltaics

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  6. Thin film ceramic thermocouples

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  7. High performance direct methanol fuel cell with thin electrolyte membrane

    Wan, Nianfang

    2017-06-01

    A high performance direct methanol fuel cell is achieved with thin electrolyte membrane. 320 mW cm-2 of peak power density and over 260 mW cm-2 at 0.4 V are obtained when working at 90 °C with normal pressure air supply. It is revealed that the increased anode half-cell performance with temperature contributes primarily to the enhanced performance at elevated temperature. From the comparison of iR-compensated cathode potential of methanol/air with that of H2/air fuel cell, the impact of methanol crossover on cathode performance decreases with current density and becomes negligible at high current density. Current density is found to influence fuel efficiency and methanol crossover significantly from the measurement of fuel efficiency at different current density. At high current density, high fuel efficiency can be achieved even at high temperature, indicating decreased methanol crossover.

  8. Thin film metal-oxides

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  9. High performance thin layer chromatography profile of Cassytha filiformis

    Mythili Sathiavelu; Sathiavelu Arunachalam

    2012-01-01

    Objective: To study the phenols, flavonoids, saponin profile of the medicinal plant Cassytha filiformis (C. filiformis) using high performance thin layer chromatography (HPTLC). Methods:The extracts were tested to determine the presence of various phytochmeicals like alkaloids, phenolic compounds, flavonoids, carbohydrates, glycosides, saponins, terpenoids, tannins, fixed oils, fats and protein and aminoacids (Harborne and Harborne, 1998). HPTLC studies were carried out by Harborne and Wagner et al method. Different compositions of the mobile phase for HPTLC analysis were tested in order to obtain high resolution and reproducible peaks. Results: The results of the preliminary phytochemical studies confirm the presence of phenols, alkaloids, carbohydrates, saponins, flavanoids, terpenoids and tannins in the methanolic extracts of C. filiformis. The methanolic extracts of C. filiformis displayed the presence of 13 types of phenolic substances with 13 different Rf values ranging from 0.01 to 0.96. The results illustrated the presence of 9 different types of flavonoides with 9 different Rf values ranging from 0.01 to 0.97. The results of HPTLC analysis of saponins demonstrated the presence of 11 different types of saponins with 11 different Rf values ranging from 0.04 to 0.92. Conclusions: In the present study we observed the phenols, flavonoids, saponin profile of the medicinal plant C. filiformis using high performance thin layer chromatography (HPTLC). Hence it was concluded that the phenolic compounds present in the methonolic extract could be responsible for antioxidant activities. Plant derived antioxidants, especially phenols and flavonoids, have been described to have various properties like anticancer, antiaging and prevention of cardiovascular diseases. Furthur, separation and characterization of the bioactive compound from the plant is to be evaluated and reported in near future.

  10. NMR characterization of thin films

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  11. NMR characterization of thin films

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  12. Rare Earth Oxide Thin Films

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  13. Selective inorganic thin films

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  14. Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

    Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

    2017-12-01

    This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

  15. Superconducting oxypnictide thin films

    Reisner, Andreas; Kidszun, Martin; Reich, Elke; Holzapfel, Bernhard; Schultz, Ludwig; Haindl, Silvia [IFW Dresden, Institute of Metallic Materials (Germany); Thersleff, Thomas [Uppsala University, Angstrom Laboratory (Sweden)

    2012-07-01

    We present an overview on the oxypnictide thin film preparation. So far, only LaAlO{sub 3} (001) single crystalline substrates provided a successful growth using pulsed laser deposition in combination with a post annealing process. Further experiments on the in-situ deposition will be reported. The structure of the films was investigated by X-ray diffractometry and transmission electron microscopy. Transport properties were measured with different applied fields to obtain a magnetic phase diagram for this new type of superconductor.

  16. Mechanics of Thin Films

    1992-02-06

    and the second geometry was that of squat cylinders (diameter 6.4 mm, height 6.4 mm). These two geometries were tested in thermal shock tests, and a...milder [13]. More recently, Lau, Rahman and stressa nce ntrati, tha n films of lmalla rat ve spc Delale calculated the free edge singularity for stress...thickness of 3 mm); the second geometry was that As an example of the shielding effect of thin films, we of squat cylinders (diameter 6.4 mm, height 6.4

  17. Thin film processes

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  18. Handbook of thin film technology

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  19. Aligned Carbon Nanotubes for High-Performance Films and Composites

    Zhang, Liwen

    Carbon nanotubes (CNTs) with extraordinary properties and thus many potential applications have been predicted to be the best reinforcements for the next-generation multifunctional composite materials. Difficulties exist in transferring the most use of the unprecedented properties of individual CNTs to macroscopic forms of CNT assemblies. Therefore, this thesis focuses on two main goals: 1) discussing the issues that influence the performance of bulk CNT products, and 2) fabricating high-performance dry CNT films and composite films with an understanding of the fundamental structure-property relationship in these materials. Dry CNT films were fabricated by a winding process using CNT arrays with heights of 230 mum, 300 im and 360 mum. The structures of the as-produced films, as well as their mechanical and electrical properties were examined in order to find out the effects of different CNT lengths. It was found that the shorter CNTs synthesized by shorter time in the CVD furnace exhibited less structural defects and amorphous carbon, resulting in more compact packing and better nanotube alignment when made into dry films, thus, having better mechanical and electrical performance. A novel microcombing approach was developed to mitigate the CNT waviness and alignment in the dry films, and ultrahigh mechanical properties and exceptional electrical performance were obtained. This method utilized a pair of sharp surgical blades with microsized features at the blade edges as micro-combs to, for the first time, disentangle and straighten the wavy CNTs in the dry-drawn CNT sheet at single-layer level. The as-combed CNT sheet exhibited high level of nanotube alignment and straightness, reduced structural defects, and enhanced nanotube packing density. The dry CNT films produced by microcombing had a very high Young's modulus of 172 GPa, excellent tensile strength of 3.2 GPa, and unprecedented electrical conductivity of 1.8x10 5 S/m, which were records for CNT films or

  20. Direct growth of metal-organic frameworks thin film arrays on glassy carbon electrode based on rapid conversion step mediated by copper clusters and hydroxide nanotubes for fabrication of a high performance non-enzymatic glucose sensing platform.

    Shahrokhian, Saeed; Khaki Sanati, Elnaz; Hosseini, Hadi

    2018-07-30

    The direct growth of self-supported metal-organic frameworks (MOFs) thin film can be considered as an effective strategy for fabrication of the advanced modified electrodes in sensors and biosensor applications. However, most of the fabricated MOFs-based sensors suffer from some drawbacks such as time consuming for synthesis of MOF and electrode making, need of a binder or an additive layer, need of expensive equipment and use of hazardous solvents. Here, a novel free-standing MOFs-based modified electrode was fabricated by the rapid direct growth of MOFs on the surface of the glassy carbon electrode (GCE). In this method, direct growth of MOFs was occurred by the formation of vertically aligned arrays of Cu clusters and Cu(OH) 2 nanotubes, which can act as both mediator and positioning fixing factor for the rapid formation of self-supported MOFs on GCE surface. The effect of both chemically and electrochemically formed Cu(OH) 2 nanotubes on the morphological and electrochemical performance of the prepared MOFs were investigated. Due to the unique properties of the prepared MOFs thin film electrode such as uniform and vertically aligned structure, excellent stability, high electroactive surface area, and good availability to analyte and electrolyte diffusion, it was directly used as the electrode material for non-enzymatic electrocatalytic oxidation of glucose. Moreover, the potential utility of this sensing platform for the analytical determination of glucose concentration was evaluated by the amperometry technique. The results proved that the self-supported MOFs thin film on GCE is a promising electrode material for fabricating and designing non-enzymatic glucose sensors. Copyright © 2018 Elsevier B.V. All rights reserved.

  1. Thin films for precision optics

    Araujo, J.F.; Maurici, N.; Castro, J.C. de

    1983-01-01

    The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

  2. Microstructure of Thin Films

    1990-02-07

    Proceedings, Thin film Technologies II, 652, 256-263, (1986) B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier, "In situ and air index measurements...34 SPIE Proceedings, "Optical Components and Systems", 805, 128 (1987) 11 B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier. "In situ and air index...aT , m..a, lot,, o ,,f,02,d I4 k -1-1..... autocovariance lengths, less than 0.5 um, indicate that , 514n, ob0 o p’,Ofclllc....,,o,,oy0,1- agua sblrt

  3. Host thin films incorporating nanoparticles

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  4. Thin-film photovoltaic technology

    Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-07-01

    The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

  5. Polymer Thin Film Stabilization.

    Costa, A. C.; Oslanec, R.; Composto, R. J.; Vlcek, P.

    1998-03-01

    We study the dewetting dynamics of thin polystyrene (PS) films deposited on silicon oxide surfaces using optical (OM) and atomic force (AFM) microscopes. Quantitative analysis of the hole diameter as a function of annealing time at 175^oC shows that blending poly(styrene-block-methyl-methacrylate) (PS-b-PMMA) with PS acts to dramatically slow down the dewetting rate and even stops holes growth before they impinge. AFM studies show that the hole floor is smooth for a pure PS film but contains residual polymer for the blend. At 5% vol., a PS-b-PMMA with high molar mass and low PMMA is a more effective stabilizing agent than a low molar mass/high PMMA additive. The optimum copolymer concentration is 3% vol. beyond which film stability doesn't improve. Although dewetting is slowed down relative to pure PS, PS/PS-b-PMMA bilayers dewet at a faster rate than blends having the same overall additive concentration.

  6. Thin films: Past, present, future

    Zweibel, K

    1995-04-01

    This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

  7. Thin-film solar cell

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  8. Thin-film solar cells

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  9. Characterization of organic thin films

    Ulman, Abraham; Evans, Charles A

    2009-01-01

    Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

  10. Interfaces and thin films physics

    Equer, B.

    1988-01-01

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

  11. A novel high performance, ultra thin heat sink for electronics

    Escher, W.; Michel, B.; Poulikakos, D.

    2010-01-01

    We present an ultra thin heat sink for electronics, combining optimized impinging slot-jets, micro-channels and manifolds for efficient cooling. We first introduce a three-dimensional numerical model of the heat transfer structure, to investigate its hydrodynamic and thermal performance and its sensitivity to geometric parameters. In a second step we propose a three-dimensional hydrodynamic numerical model representing the complete system. Based on this model we design a novel manifold providing uniform fluid distribution. In order to save computational time a simpler semi-empirical model is proposed and validated. The semi-empirical model allows a robust optimization of the heat sink geometric parameters. The design is optimized for a 2 x 2 cm 2 chip and provides a total thermal resistance of 0.087 cm 2 K/W for flow rates 2 for a temperature difference between fluid inlet and chip of 65 K.

  12. Thin-Film Power Transformers

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  13. Size effects in thin films

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  14. Superconducting thin films

    Hebard, A.F.; Vandenberg, J.M.

    1982-01-01

    This invention relates to granular metal and metal oxide superconducting films formed by ion beam sputter deposition. Illustratively, the films comprise irregularly shaped, randomly oriented, small lead grains interspersed in an insulating lead oxide matrix. The films are hillock-resistant when subjected to thermal cycling and exhibit unusual josephson-type switching characteristics. Depending on the oxygen content, a film may behave in a manner similar to that of a plurality of series connected josephson junctions, or the film may have a voltage difference in a direction parallel to a major surface of the film that is capable of being switched from zero voltage difference to a finite voltage difference in response to a current larger than the critical current

  15. Pressurized planar electrochromatography, high-performance thin-layer chromatography and high-performance liquid chromatography--comparison of performance.

    Płocharz, Paweł; Klimek-Turek, Anna; Dzido, Tadeusz H

    2010-07-16

    Kinetic performance, measured by plate height, of High-Performance Thin-Layer Chromatography (HPTLC), High-Performance Liquid Chromatography (HPLC) and Pressurized Planar Electrochromatography (PPEC) was compared for the systems with adsorbent of the HPTLC RP18W plate from Merck as the stationary phase and the mobile phase composed of acetonitrile and buffer solution. The HPLC column was packed with the adsorbent, which was scrapped from the chromatographic plate mentioned. An additional HPLC column was also packed with adsorbent of 5 microm particle diameter, C18 type silica based (LiChrosorb RP-18 from Merck). The dependence of plate height of both HPLC and PPEC separating systems on flow velocity of the mobile phase and on migration distance of the mobile phase in TLC system was presented applying test solute (prednisolone succinate). The highest performance, amongst systems investigated, was obtained for the PPEC system. The separation efficiency of the systems investigated in the paper was additionally confirmed by the separation of test component mixture composed of six hormones. 2010 Elsevier B.V. All rights reserved.

  16. Beryllium thin films for resistor applications

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  17. Large dielectric constant ({epsilon}/{epsilon}{sub 0}>6000) Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} thin films for high-performance microwave phase shifters

    Carlson, C. M. [Department of Physics, University of Colorado, Boulder, Colorado 80309 (United States); Rivkin, T. V. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Parilla, P. A. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Perkins, J. D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Ginley, D. S. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Kozyrev, A. B. [Electrotechnical University of St. Petersburg, St. Petersburg, Russia 197376 (Russian Federation); Oshadchy, V. N. [Electrotechnical University of St. Petersburg, St. Petersburg, Russia 197376 (Russian Federation); Pavlov, A. S. [Electrotechnical University of St. Petersburg, St. Petersburg, Russia 197376 (Russian Federation)

    2000-04-03

    We deposited epitaxial Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} (BST) films via laser ablation on MgO and LaAlO{sub 3} (LAO) substrates for tunable microwave devices. Postdeposition anneals ({approx}1100 degree sign C in O{sub 2}) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (T{sub max}) up for BST/LAO and down for BST/MgO. These substrate-dependent T{sub max} shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant ({epsilon}/{epsilon}{sub 0}{>=}6000) and tunability ({delta}{epsilon}/{epsilon}{>=}65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of {approx}45 degree sign /dB and phase shifts of {approx}400 degree sign under 500 V ({approx}13 V/{mu}m) bias, illustrating their utility for many frequency-agile microwave devices. (c) 2000 American Institute of Physics.

  18. Semiconductor-nanocrystal/conjugated polymer thin films

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  19. Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

    Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

    2013-03-01

    Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

  20. Preparation of thin vyns films

    Blanc, R.; Chedin, P.; Gizon, A.

    1965-01-01

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm 2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation [fr

  1. Nanocrystal thin film fabrication methods and apparatus

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  2. Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors

    Shujing Guo; Liqiang Li; Zhongwu Wang; Zeyang Xu; Shuguang Wang; Kunjie Wu; Shufeng Chen; Zongbo Zhang; Caihong Xu; Wenfeng Qiu

    2017-01-01

    Silica is one of the most commonly used materials for dielectric layer in organic thin-film transistors due to its excellent stability,excellent electrical properties,mature preparation process,and good compatibility with organic semiconductors.However,most of conventional preparation methods for silica film are generally performed at high temperature and/or high vacuum.In this paper,we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route,which possesses a low leakage current,high capacitance,and low surface roughness.The silica thin film can be produced in the condition of low temperature and atmospheric environment.To meet various demands,the thickness of film can be adjusted by means of preparation conditions such as the speed of spin-coating and the concentration of solution.The p-type and n-type organic field effect transistors fabricated by using this film as gate electrodes exhibit excellent electrical performance including low voltage and high performance.This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving,time-saving and easy to operate.

  3. Design, synthesis, thin film deposition and characterization of new indium tin oxide anode functionalization/hole transport organic materials and their application to high performance organic light-emitting diodes

    Huang, Qinglan

    The primary goals of this dissertation were to understand the physical and chemical aspects of organic light-emitting diode (OLED) fundamentals, develop new materials as well as device structures, and enhance OLED electroluminescent (EL) response. Accordingly, this dissertation analyzes the relative effects of indium tin oxide (ITO) anode-hole transporting layer (HTL) contact vs. the intrinsic HTL material properties on OLED EL response. Two siloxane-based HTL materials, 4,4'-bis[(4″ -trichlorosilylpropyl-1″-naphthylphenylamino)biphenyl (NPB-Si2) and 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPD-Si2) have thereby been designed, synthesized and covalently bound to ITO surface. They afford a 250% increase in luminance and ˜50% reduction in turn-on voltage vs. comparable 4,4'-bis(1-naphthylphenylamino)biphenyl (NPB) HTL-based devices. These results suggest new strategies for developing OLED HTL structures, with focus on the anode-HTL contact. Furthermore, archetypical OLED device structures have been refined by simultaneously incorporating the TPD-Si2 layer and a hole- and exciton-blocking/electron transport layer (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) in tris(8-hydroxyquinolato)aluminum(III) and tetrakis(2-methyl-8-hydroxyquinolinato)borate-based OLEDs. The refined device structures lead to high performance OLEDs such as green-emitting OLEDs with maximum luminance (Lmax) ˜ 85,000 cd/m2, power and forward external quantum efficiencies (eta p and etaext) as high as 15.2 lm/W and 4.4 +/- 0.5%, respectively, and blue-emitting OLEDs with Lmax 30,000 cd/m 2, and ˜5.0 lm/W and 1.6 +/- 0.2% etap and eta ext, respectively. The high performance is attributed to synergistically enhanced hole/electron injection and recombination efficiency. In addition, molecule-scale structure effects at ITO anode-HTL interfaces have been systematically probed via a self-assembly approach. A series of silyltriarylamine precursors differing in aryl group and

  4. Thin films of soft matter

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  5. Review of thin film superconductivity

    Kihlstrom, K.E.

    1989-01-01

    Advances in thin film superconductivity are critical to the success of many proposed applications. The authors review several of the prominent techniques currently used to produce thin films of the high temperature superconductors including electron beam co-deposition, sputtering (both multiple and composite source configurations) and laser ablation. The authors look at the relevant parameters for each and evaluate the advantages and disadvantages of each technique. In addition, promising work on in situ oxidation is discussed. Also addressed are efforts to find optimum substrate materials and substrate buffer layers for various applications. The current state of the art for T c , J c and H c2 is presented for the yttrium, bismuth, and thallium compounds

  6. Polycrystalline thin films : A review

    Valvoda, V [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  7. Magnetization in permalloy thin films

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron ... alloys of Ni and Fe) take an important place. NiFe alloy with a ... room temperature (∼298 K, without intentional heating) on Si(100) substrates. A base pressure of 1×10−6 mbar was achieved prior to the deposition. Three different ...

  8. Thin-Film Material Science and Processing | Materials Science | NREL

    Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

  9. Photoconductivity of thin organic films

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-01-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C 60 ), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C 60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10 3 Ω m and 3 x 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10 8 Ω m in dark to 3.1 x 10 6 Ω m under the light.

  10. Flexible thin film magnetoimpedance sensors

    Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-01-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  11. Flexible thin film magnetoimpedance sensors

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  12. Characterization of nanocrystalline cadmium telluride thin films ...

    Unknown

    tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

  13. A validated high performance thin layer chromatography method for determination of yohimbine hydrochloride in pharmaceutical preparations

    Jihan M Badr

    2013-01-01

    Background: Yohimbine is an indole alkaloid used as a promising therapy for erectile dysfunction. A number of methods were reported for the analysis of yohimbine in the bark or in pharmaceutical preparations. Materials and Method: In the present work, a simple and sensitive high performance thin layer chromatographic method is developed for determination of yohimbine (occurring as yohimbine hydrochloride) in pharmaceutical preparations and validated according to International Conference of Ha...

  14. Chemical Welding on Semimetallic TiS2 Nanosheets for High-Performance Flexible n-Type Thermoelectric Films.

    Zhou, Yuan; Wan, Juanyong; Li, Qi; Chen, Lei; Zhou, Jiyang; Wang, Heao; He, Dunren; Li, Xiaorui; Yang, Yaocheng; Huang, Huihui

    2017-12-13

    Solution-based processing of two-dimensional (2D) materials provides the possibility of allowing these materials to be incorporated into large-area thin films, which can translate the interesting fundamental properties of 2D materials into available devices. Here, we report for the first time a novel chemical-welding method to achieve high-performance flexible n-type thermoelectric films using 2D semimetallic TiS 2 nanosheets. We employ chemically exfoliated TiS 2 nanosheets bridged with multivalent cationic metal Al 3+ to cross-link the nearby sheets during the film deposition process. We find that such a treatment can greatly enhance the stability of the film and can improve the power factor by simultaneously increasing the Seebeck coefficient and electrical conductivity. The resulting TiS 2 nanosheet-based flexible film shows a room temperature power factor of ∼216.7 μW m -1 K -2 , which is among the highest chemically exfoliated 2D transition-metal dichalcogenide nanosheet-based films and comparable to the best flexible n-type thermoelectric films, to our knowledge, indicating its potential applications in wearable electronics.

  15. Thin films for emerging applications v.16

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  16. Analysis of Hard Thin Film Coating

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  17. Progress in thin film techniques

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  18. High temperature superconductor thin films

    Correra, L.

    1992-01-01

    Interdisciplinary research on superconducting oxides is the main focus of the contributors in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved. The papers are presented in five chapters, subsequently on properties, film growth and processing, substrates and multilayers, structural characterization, and applications

  19. Minerals deposited as thin films

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  20. Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

    Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

  1. Thin liquid films dewetting and polymer flow

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  2. High performance, transparent a-IGZO TFTs on a flexible thin glass substrate

    Lee, Gwang Jun; Jang, Jae Eun; Kim, Joonwoo; Kim, Jung-Hye; Jeong, Soon Moon; Jeong, Jaewook

    2014-01-01

    We investigated electrical properties of transparent amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with amorphous indium zinc oxide (a-IZO) transparent electrodes on a flexble thin glass substrate. The TFTs show a high field-effect mobility, a good subthreshold slope and a high on/off ratio owing to the high temperature thermal annealing process which cannot be applied to typical transparent polymer-based flexible substrates. Bias stress instability tests applying tensile stress concurrently with the bending radius of up to 40 mm indicated that mechanically and electrically stable a-IGZO TFTs can be fabricated on the transparent thin glass substrate. (paper)

  3. Low-Temperature Soft-Cover Deposition of Uniform Large-Scale Perovskite Films for High-Performance Solar Cells.

    Ye, Fei; Tang, Wentao; Xie, Fengxian; Yin, Maoshu; He, Jinjin; Wang, Yanbo; Chen, Han; Qiang, Yinghuai; Yang, Xudong; Han, Liyuan

    2017-09-01

    Large-scale high-quality perovskite thin films are crucial to produce high-performance perovskite solar cells. However, for perovskite films fabricated by solvent-rich processes, film uniformity can be prevented by convection during thermal evaporation of the solvent. Here, a scalable low-temperature soft-cover deposition (LT-SCD) method is presented, where the thermal convection-induced defects in perovskite films are eliminated through a strategy of surface tension relaxation. Compact, homogeneous, and convection-induced-defects-free perovskite films are obtained on an area of 12 cm 2 , which enables a power conversion efficiency (PCE) of 15.5% on a solar cell with an area of 5 cm 2 . This is the highest efficiency at this large cell area. A PCE of 15.3% is also obtained on a flexible perovskite solar cell deposited on the polyethylene terephthalate substrate owing to the advantage of presented low-temperature processing. Hence, the present LT-SCD technology provides a new non-spin-coating route to the deposition of large-area uniform perovskite films for both rigid and flexible perovskite devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Intrinsically conductive polymer thin film piezoresistors

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  5. Excimer Laser Deposition of PLZT Thin Films

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  6. Thin films of mixed metal compounds

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  7. Field ion microscope studies on thin films

    Cavaleru, A.; Scortaru, A.

    1976-01-01

    A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)

  8. Cellulose triacetate, thin film dielectric capacitor

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  9. Cost optimization of load carrying thin-walled precast high performance concrete sandwich panels

    Hodicky, Kamil; Hansen, Sanne; Hulin, Thomas

    2015-01-01

    and HPCSP’s geometrical parameters as well as on material cost function in the HPCSP design. Cost functions are presented for High Performance Concrete (HPC), insulation layer, reinforcement and include labour-related costs. The present study reports the economic data corresponding to specific manufacturing......The paper describes a procedure to find the structurally and thermally efficient design of load-carrying thin-walled precast High Performance Concrete Sandwich Panels (HPCSP) with an optimal economical solution. A systematic optimization approach is based on the selection of material’s performances....... The solution of the optimization problem is performed in the computer package software Matlab® with SQPlab package and integrates the processes of HPCSP design, quantity take-off and cost estimation. The proposed optimization process outcomes in complex HPCSP design proposals to achieve minimum cost of HPCSP....

  10. Nanostructured thin films and coatings functional properties

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  11. BDS thin film damage competition

    Stolz, Christopher J.; Thomas, Michael D.; Griffin, Andrew J.

    2008-10-01

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  12. Method of producing thin cellulose nitrate film

    Lupica, S.B.

    1975-01-01

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent

  13. Experimental Studies on the Fire Behaviour of High Performance Concrete Thin Plates

    Hulin, Thomas; Hodicky, Kamil; Schmidt, Jacob Wittrup

    2015-01-01

    In recent decades, the use of structural high performance concrete (HPC) sandwich panels made with thin plates has increased as a response to modern environmental challenges. Fire endurance is a requirement in structural HPC elements, as for most structural elements. This paper presents experimen......In recent decades, the use of structural high performance concrete (HPC) sandwich panels made with thin plates has increased as a response to modern environmental challenges. Fire endurance is a requirement in structural HPC elements, as for most structural elements. This paper presents....... The parametric assessment of the specimen performance included: thickness of the specimen, testing apparatus, and concrete mix (both with and without polypropylene fibres). The results verified the ability of H-TRIS to impose an equivalent thermal boundary condition to that imposed during a standard furnace test......, with good repeatability, and at comparatively low economic and temporal costs. The results demonstrated that heat induced concrete spalling occurred 1 to 5 min earlier, and in a more destructive manner, for thinner specimens. An analysis is presented combining the thermal material degradation, vapour pore...

  14. Aggregation Strength Tuning in Difluorobenzoxadiazole-Based Polymeric Semiconductors for High-Performance Thick-Film Polymer Solar Cells.

    Chen, Peng; Shi, Shengbin; Wang, Hang; Qiu, Fanglong; Wang, Yuxi; Tang, Yumin; Feng, Jian-Rui; Guo, Han; Cheng, Xing; Guo, Xugang

    2018-06-27

    High-performance polymer solar cells (PSCs) with thick active layers are essential for large-scale production. Polymer semiconductors exhibiting a temperature-dependent aggregation property offer great advantages toward this purpose. In this study, three difluorobenzoxadiazole (ffBX)-based donor polymers, PffBX-T, PffBX-TT, and PffBX-DTT, were synthesized, which contain thiophene (T), thieno[3,2- b]thiophene (TT), and dithieno[3,2- b:2',3'- d]thiophene (DTT) as the π-spacers, respectively. Temperature-dependent absorption spectra reveal that the aggregation strength increases in the order of PffBX-T, PffBX-TT, and PffBX-DTT as the π-spacer becomes larger. PffBX-TT with the intermediate aggregation strength enables well-controlled disorder-order transition in the casting process of blend film, thus leading to the best film morphology and the highest performance in PSCs. Thick-film PSCs with an average power conversion efficiency (PCE) of 8.91% and the maximum value of 9.10% are achieved using PffBX-TT:PC 71 BM active layer with a thickness of 250 nm. The neat film of PffBX-TT also shows a high hole mobility of 1.09 cm 2 V -1 s -1 in organic thin-film transistors. When PffBX-DTT and PffBX-T are incorporated into PSCs utilizing PC 71 BM acceptor, the average PCE decreases to 6.54 and 1.33%, respectively. The performance drop mainly comes from reduced short-circuit current, as a result of nonoptimal blend film morphology caused by a less well-controlled film formation process. A similar trend was also observed in nonfullerene type thick-film PSCs using IT-4F as the electron acceptor. These results show the significance of polymer aggregation strength tuning toward optimal bulk heterojunction film morphology using ffBX-based polymer model system. The study demonstrates that adjusting π-spacer is an effective method, in combination with other important approaches such as alkyl chain optimization, to generate high-performance thick-film PSCs which are critical for

  15. Quantification of Quercetin and Rutin from Benincasa hispida Seeds and Carissa Congesta Roots by High-performance Thin Layer Chromatography and High-performance Liquid Chromatography.

    Doshi, Gaurav Mahesh; Une, Hemant Devidas

    2016-01-01

    In Indian Ayurvedic system, Benincasa hispida (BH) and Carissa congesta (CC) are well-known plants used for major and minor ailments. BH has been regarded as Kushmanda, whereas CC has been used in immune-related disorders of the human system. Quercetin and rutin identified from the vast plethora of plant extracts have proved to possess ethnopharmacological relevance. In present studies, we have determined quercetin and rutin in terms of percentage in BH seeds and CC roots by high-performance thin layer chromatography (HPTLC) and high-performance liquid chromatography (HPLC). After extraction and phytochemical screening, the extracts were subjected to quantification for the presence of quercetin and rutin by HPTLC and HPLC. HPTLC showed quercetin as 44.60, 27.13% and rutin as 32.00, 36.31% w/w, whereas HPLC revealed quercetin as 34.00, 35.00% and rutin as 21.99, 45.03% w/v in BH and CC extracts, respectively. The BH and CC extracts have elucidated peaks that were corresponding with standard peaks on undertaking chromatographic studies. Quercetin and rutin are isolated from BH seeds and CC roots by High Performance. Thin Layer Chromatography and High Performance Liquid Chromatography. HPTLC revealed presence of quercetin as 44.60, 27.13 % and rutin as 32.00, 36.31 % w/w. HPLC revealed presence of quercetin as 34.00, 35.00 % and rutin as 21.99, 45.03 % w/v. Abbreviation Used: HPTLC: High Performance Thin Layer Chromatography; HPLC: High Pressure Liquid Chromatography, UV: Ultraviolet, CC: Carissa congesta, BH: Benincasa hispida.

  16. Quantification of Quercetin and Rutin from Benincasa hispida Seeds and Carissa Congesta Roots by High-performance Thin Layer Chromatography and High-performance Liquid Chromatography

    Doshi, Gaurav Mahesh; Une, Hemant Devidas

    2016-01-01

    Objective: In Indian Ayurvedic system, Benincasa hispida (BH) and Carissa congesta (CC) are well-known plants used for major and minor ailments. BH has been regarded as Kushmanda, whereas CC has been used in immune-related disorders of the human system. Quercetin and rutin identified from the vast plethora of plant extracts have proved to possess ethnopharmacological relevance. Materials and Methods: In present studies, we have determined quercetin and rutin in terms of percentage in BH seeds and CC roots by high-performance thin layer chromatography (HPTLC) and high-performance liquid chromatography (HPLC). After extraction and phytochemical screening, the extracts were subjected to quantification for the presence of quercetin and rutin by HPTLC and HPLC. Results: HPTLC showed quercetin as 44.60, 27.13% and rutin as 32.00, 36.31% w/w, whereas HPLC revealed quercetin as 34.00, 35.00% and rutin as 21.99, 45.03% w/v in BH and CC extracts, respectively. Conclusion: The BH and CC extracts have elucidated peaks that were corresponding with standard peaks on undertaking chromatographic studies. SUMMARY Quercetin and rutin are isolated from BH seeds and CC roots by High Performance. Thin Layer Chromatography and High Performance Liquid Chromatography. HPTLC revealed presence of quercetin as 44.60, 27.13 % and rutin as 32.00, 36.31 % w/w. HPLC revealed presence of quercetin as 34.00, 35.00 % and rutin as 21.99, 45.03 % w/v. Abbreviation Used: HPTLC: High Performance Thin Layer Chromatography; HPLC: High Pressure Liquid Chromatography, UV: Ultraviolet, CC: Carissa congesta, BH: Benincasa hispida PMID:26941534

  17. A validated high performance thin layer chromatography method for determination of yohimbine hydrochloride in pharmaceutical preparations.

    Badr, Jihan M

    2013-01-01

    Yohimbine is an indole alkaloid used as a promising therapy for erectile dysfunction. A number of methods were reported for the analysis of yohimbine in the bark or in pharmaceutical preparations. In the present work, a simple and sensitive high performance thin layer chromatographic method is developed for determination of yohimbine (occurring as yohimbine hydrochloride) in pharmaceutical preparations and validated according to International Conference of Harmonization (ICH) guidelines. The method employed thin layer chromatography aluminum sheets precoated with silica gel as the stationary phase and the mobile phase consisted of chloroform:methanol:ammonia (97:3:0.2), which gave compact bands of yohimbine hydrochloride. Linear regression data for the calibration curves of standard yohimbine hydrochloride showed a good linear relationship over a concentration range of 80-1000 ng/spot with respect to the area and correlation coefficient (R(2)) was 0.9965. The method was evaluated regarding accuracy, precision, selectivity, and robustness. Limits of detection and quantitation were recorded as 5 and 40 ng/spot, respectively. The proposed method efficiently separated yohimbine hydrochloride from other components even in complex mixture containing powdered plants. The amount of yohimbine hydrochloride ranged from 2.3 to 5.2 mg/tablet or capsule in preparations containing the pure alkaloid, while it varied from zero (0) to 1.5-1.8 mg/capsule in dietary supplements containing powdered yohimbe bark. We concluded that this method employing high performance thin layer chromatography (HPTLC) in quantitative determination of yohimbine hydrochloride in pharmaceutical preparations is efficient, simple, accurate, and validated.

  18. Macro stress mapping on thin film buckling

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  19. High performance, freestanding and superthin carbon nanotube/epoxy nanocomposite films.

    Li, Jinzhu; Gao, Yun; Ma, Wenjun; Liu, Luqi; Zhang, Zhong; Niu, Zhiqiang; Ren, Yan; Zhang, Xiaoxian; Zeng, Qingshen; Dong, Haibo; Zhao, Duan; Cai, Le; Zhou, Weiya; Xie, Sishen

    2011-09-01

    We develop a facile, effective and filter free infiltration method to fabricate high performance, freestanding and superthin epoxy nanocomposite films with directly synthesized Sing-Walled Carbon Nanotubes (SWNTs) film as reinforcement skeleton. It is found that the thicknesses of the nanocomposite films can be easily controlled in the range of 0.5-3 μm by dripping target amount of acetone diluted epoxy through the skeleton film. The consequent measurements reveal that the mechanical and electrical properties of SWNTs/epoxy nanocomposite films could be tailored in a quite wide range. For examples, the Young's modulus of nanocomposite films can be tuned from 10 to 30 GPa, and the electrical conductivity can be ranged from 1000 S·cm(-1) to be insulated. Moreover, high load transfer efficiency in the nanocomposite films is demonstrated by the measured ultrahigh Raman bands shift rate (-30 ± 5 cm(-1)/% strain) under strain. The high effective modulus is derived as 774 ± 70 GPa for SWNTs inside this nanocomposite film.

  20. Solid thin film materials for use in thin film charge-coupled devices

    Lynch, S.J.

    1983-01-01

    Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

  1. Passivation Effects in Copper Thin Films

    Wiederhirn, G.; Nucci, J.; Richter, G.; Arzt, E.; Balk, T. J.; Dehm, G.

    2006-01-01

    We studied the influence of a 10 nm AlxOy passivation on the stress-temperature behavior of 100 nm and 1 μm thick Cu films. At low temperatures, the passivation induces a large tensile stress increase in the 100 nm film; however, its effect on the 1 μm film is negligible. At high temperatures, the opposite behavior is observed; while the passivation does not change the 100 nm film behavior, it strengthens the 1 μm film by driving it deeper into compression. These observations are explained in light of a combination of constrained diffusional creep and dislocation dynamics unique to ultra-thin films

  2. High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals.

    Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J; Zhang, Yanliang

    2016-09-12

    Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm(2) with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

  3. Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

    Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

    2018-04-01

    In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

  4. Thermal conductivity model for nanoporous thin films

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  5. High performance thin layer chromatography fingerprint analysis of guava (Psidium guajava) leaves

    Astuti, M.; Darusman, L. K.; Rafi, M.

    2017-05-01

    High-performance thin layer chromatography (HPTLC) fingerprint analysis is commonly used for quality control of medicinal plants in term of identification and authentication. In this study, we have been developed HPTLC fingerprint analysis for identification of guava (Psidium guajava) leaves raw material. A mixture of chloroform, acetone, and formic acid in the ratio 10:2:1 was used as the optimum mobile phase in HPTLC silica plate and with 13 bands were detected. As reference marker we chose gallic acid (Rf = 0.21) and catechin (Rf = 0.11). The two compound were detected as pale black bands at 366 nm after derivatization with sulfuric acid 10% v/v (in methanol) reagent. Validation of the method was met within validation criteria, so the developed method could be used for quality control of guava leaves.

  6. Experimental investigations of sandwich panels using high performance concrete thin plates exposed to fire

    Hulin, Thomas; Hodicky, Kamil; Schmidt, Jacob Wittrup

    2015-01-01

    Structural sandwich panels using thin high performance concrete (HPC) plates offer a possibility to address the modern environmental challenges faced by the construction industry. Fire resistance is a major necessity in structures using HPC. This paper presents experimental studies at elevated...... temperatures for panels with 30 mm thick plates stiffened by structural ribs, thick insulation layers, and steel shear connecting systems. Parametric variation assessing the role of each component of the sandwich structure was performed on unloaded specimens of reduced size. Full size walls were tested...... with load. Tests were performed in standard furnaces, following the conditions of REI certification tests. Unloaded specimens successfully passed tests. Loaded specimens met the R and I requirements, failing E due to sustained flaming of the insulation. They exhibited multiple cracking of their exposed...

  7. Optimization process for thin-walled high performance concrete sandwich panels

    Hodicky, Kamil; Hulin, Thomas; Schmidt, Jacob Wittrup

    2014-01-01

    with the specifications of the design constrains and variables. The tool integrates the processes of HPCSP design, quantity take-off and cost estimation into a single system that would provide different costs for different HPCSP designs. The proposed multi-objective optimisation scheme results into derivation of basic......A Nearly zero energy buildings are to become a requirement as part of the European energy policy. There are many ways of designing nearly zero energy buildings, but there is a lack of knowledge on optimization processes in the sense of structurally and thermally efficient design with an optimal...... economical solution. The present paper aims to provide multi-objective optimisation procedure addressed to structural precast thin-walled High Performance Concrete Sandwich Panels (HPCSP). The research aim is concerned with developing a tool that considers the cost of HPCSP materials along...

  8. Influence of Basalt FRP Mesh Reinforcement on High-Performance Concrete Thin Plates at High Temperatures

    Hulin, Thomas; Lauridsen, Dan H.; Hodicky, Kamil

    2015-01-01

    A basalt fiber–reinforced polymer (BFRP) mesh was introduced as reinforcement in high-performance concrete (HPC) thin plates (20–30 mm) for implementation in precast sandwich panels. An experimental program studied the BFRP mesh influence on HPC exposed to high temperature. A set of standard...... furnace tests compared performances of HPC with and without BFRP mesh, assessing material behavior; another set including polypropylene (PP) fibers to avoid spalling compared the performance of BFRP mesh reinforcement to that of regular steel reinforcement, assessing mechanical properties......, requiring the use of steel. Microscope observations highlighted degradation of the HPC-BFRP mesh interface with temperature due to the melting polymer matrix of the mesh. These observations call for caution when using fiber-reinforced polymer (FRP) reinforcement in elements exposed to fire hazard....

  9. Epitaxy, thin films and superlattices

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  10. Epitaxy, thin films and superlattices

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  11. Flush Mounting Of Thin-Film Sensors

    Moore, Thomas C., Sr.

    1992-01-01

    Technique developed for mounting thin-film sensors flush with surfaces like aerodynamic surfaces of aircraft, which often have compound curvatures. Sensor mounted in recess by use of vacuum pad and materials selected for specific application. Technique involves use of materials tailored to thermal properties of substrate in which sensor mounted. Together with customized materials, enables flush mounting of thin-film sensors in most situations in which recesses for sensors provided. Useful in both aircraft and automotive industries.

  12. Thin film description by wavelet coefficients statistics

    Boldyš, Jiří; Hrach, R.

    2005-01-01

    Roč. 55, č. 1 (2005), s. 55-64 ISSN 0011-4626 Grant - others:GA UK(CZ) 173/2003 Institutional research plan: CEZ:AV0Z10750506 Keywords : thin films * wavelet transform * descriptors * histogram model Subject RIV: BD - Theory of Information Impact factor: 0.360, year: 2005 http://library.utia.cas.cz/separaty/2009/ZOI/boldys-thin film description by wavelet coefficients statistics .pdf

  13. Photoluminescence properties of perovskite multilayer thin films

    Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

    2016-07-01

    Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

  14. Nanosphere lithography applied to magnetic thin films

    Gleason, Russell

    Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

  15. Tailoring electronic structure of polyazomethines thin films

    J. Weszka; B. Hajduk; M. Domański; M. Chwastek; J. Jurusik; B. Jarząbek; H. Bednarski; P. Jarka

    2010-01-01

    Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD) can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic ...

  16. Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

    Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

    2006-01-01

    A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

  17. Electrochemical fabrication of nanoporous polypyrrole thin films

    Li Mei; Yuan Jinying; Shi Gaoquan

    2008-01-01

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. σ rt ∼ 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90 o /s at a driving potential of 0.8 V (vs. Ag/AgCl)

  18. Polymer surfaces, interfaces and thin films

    Stamm, M [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  19. Polymer surfaces, interfaces and thin films

    Stamm, M.

    1996-01-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs

  20. Simulated Thin-Film Growth and Imaging

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  1. Restructuring in block copolymer thin films

    Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

    2017-01-01

    Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...

  2. Nanostructured thin films as functional coatings

    Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

    2010-06-15

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  3. Heat shrink formation of a corrugated thin film thermoelectric generator

    Sun, Tianlei; Peavey, Jennifer L.; David Shelby, M.; Ferguson, Scott; O’Connor, Brendan T.

    2015-01-01

    Highlights: • Demonstrate and characterize a thermoelectric generator with a corrugated geometry. • Employ a novel heat shrink fabrication approach compatible with low-cost processing. • Use thermal impedance modeling to explore design potential. • Corrugated design shown to be advantageous for low heat-flux density applications. - Abstract: A thin film thermoelectric (TE) generator with a corrugated architecture is demonstrated formed using a heat-shrink fabrication approach. Fabrication of the corrugated TE structure consists of depositing thin film thermoelectric elements onto a planar non-shrink polyimide substrate that is then sandwiched between two uniaxial stretch-oriented co-polyester (PET) films. The heat shrink PET films are adhered to the polyimide in select locations, such that when the structure is placed in a high temperature environment, the outer films shrink resulting in a corrugated core film and thermoelectric elements spanning between the outer PET films. The module has a cross-plane heat transfer architecture similar to a conventional bulk TE module, but with heat transfer in the plane of the thin film thermoelectric elements, which assists in maintaining a significant temperature difference across the thermoelectric junctions. In this demonstration, Ag and Ni films are used as the thermoelectric elements and a Seebeck coefficient of 14 μV K −1 is measured with a maximum power output of 0.22 nW per couple at a temperature difference of 7.0 K. We then theoretically consider the performance of this device architecture with high performance thermoelectric materials in the heat sink limited regime. The results show that the heat-shrink approach is a simple fabrication method that may be advantageous in large-area, low power density applications. The fabrication method is also compatible with simple geometric modification to achieve various form factors and power densities to customize the TE generator for a range of applications

  4. A flexible, high-performance magnetoelectric heterostructure of (001) oriented Pb(Zr0.52Ti0.48)O3 film grown on Ni foil

    Palneedi, Haribabu; Yeo, Hong Goo; Hwang, Geon-Tae; Annapureddy, Venkateswarlu; Kim, Jong-Woo; Choi, Jong-Jin; Trolier-McKinstry, Susan; Ryu, Jungho

    2017-09-01

    In this study, a flexible magnetoelectric (ME) heterostructure of PZT/Ni was fabricated by depositing a (001) oriented Pb(Zr0.52Ti0.48)O3 (PZT) film on a thin, flexible Ni foil buffered with LaNiO3/HfO2. Excellent ferroelectric properties and large ME voltage coefficient of 3.2 V/cmṡOe were realized from the PZT/Ni heterostructure. The PZT/Ni composite's high performance was attributed to strong texturing of the PZT film, coupled with the compressive stress in the piezoelectric film. Besides, reduced substrate clamping in the PZT film due to the film on the foil structure and strong interfacial bonding in the PZT/LaNiO3/HfO2/Ni heterostructure could also have contributed to the high ME performance of PZT/Ni.

  5. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  6. Microscopic local fatigue in PZT thin films

    Li, B S; Wu, A; Vilarinho, P M

    2007-01-01

    The reduction in switchable polarization during fatigue largely limits the application of PZT thin films in ferroelectric nonvolatile memories. So, it is very important to understand the fatigue mechanism in PZT films, especially at a nanoscale level. In this paper, nanoscale fatigue properties in PZT thin films have been studied by piezoresponse force microscopy and local piezoloops. It has been found that a piezoloop obtained on a fatigued point exhibits a much more pinched shape and a local imprint phenomenon is observed after severe fatigue. Furthermore, the domain structure evolves from a simple single-peak profile to a complex fluctuant one. However, there is only some shift of the piezoloop when a unipolar field with the same amplitude is applied on the film. The available experimental data show that there exist obvious domain wall pinning and injection of electrons into the film during fatigue. Finally, a schematic illustration is suggested to explain the possible fatigue mechanism

  7. Optical constant of thin gold films

    Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

    2017-01-01

    The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... of the device. At the same time, metal films of different thicknesses are needed for different applications and, since these films are polycrystalline, their internal properties and surface roughness can greatly vary from one thickness to another. In this work, we study, using atomic force microscopy...

  8. Thermal conductivity of nanoscale thin nickel films

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  9. Magnetostrictive thin films prepared by RF sputtering

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  10. Critical behavior of ferromagnetic Ising thin films

    Cossio, P.; Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films

  11. HPTLC-aptastaining - Innovative protein detection system for high-performance thin-layer chromatography

    Morschheuser, Lena; Wessels, Hauke; Pille, Christina; Fischer, Judith; Hünniger, Tim; Fischer, Markus; Paschke-Kratzin, Angelika; Rohn, Sascha

    2016-05-01

    Protein analysis using high-performance thin-layer chromatography (HPTLC) is not commonly used but can complement traditional electrophoretic and mass spectrometric approaches in a unique way. Due to various detection protocols and possibilities for hyphenation, HPTLC protein analysis is a promising alternative for e.g., investigating posttranslational modifications. This study exemplarily focused on the investigation of lysozyme, an enzyme which is occurring in eggs and technologically added to foods and beverages such as wine. The detection of lysozyme is mandatory, as it might trigger allergenic reactions in sensitive individuals. To underline the advantages of HPTLC in protein analysis, the development of innovative, highly specific staining protocols leads to improved sensitivity for protein detection on HPTLC plates in comparison to universal protein derivatization reagents. This study aimed at developing a detection methodology for HPTLC separated proteins using aptamers. Due to their affinity and specificity towards a wide range of targets, an aptamer based staining procedure on HPTLC (HPTLC-aptastaining) will enable manifold analytical possibilities. Besides the proof of its applicability for the very first time, (i) aptamer-based staining of proteins is applicable on different stationary phase materials and (ii) furthermore, it can be used as an approach for a semi-quantitative estimation of protein concentrations.

  12. Thin Films in the Photovoltaic Industry

    Jaeger-Waldau, A.

    2008-03-01

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  13. Lithium ion intercalation into thin film anatase

    Kundrata, I.; Froehlich, K.; Ballo, P.

    2015-01-01

    The aim of this work is to find the optimal parameters for thin film TiO 2 anatase grown by Atomic layer deposition (ALD) for use as electrode in lithium ion batteries. Two parameters, the optimal film thickness and growth conditions are aimed for. Optimal film thickness for achieving optimum between capacity gained from volume and capacity gained by changing of the intercalation constant and optimal growth conditions for film conformity on structured substrates with high aspect ratio. Here we presents first results from this ongoing research and discuss future outlooks. (authors)

  14. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  15. High-performance ferroelectric memory based on phase-separated films of polymer blends

    Khan, Yasser; Bhansali, Unnat Sampatraj; Almadhoun, Mahmoud N.; Odeh, Ihab N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. High-performance ferroelectric memory based on phase-separated films of polymer blends

    Khan, Yasser

    2013-10-29

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.

    Liang, Xuelei; Xia, Jiye; Dong, Guodong; Tian, Boyuan; Peng, Lianmao

    2016-12-01

    Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

  18. Organic thin films and surfaces directions for the nineties

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  19. Magnetic characterisation of longitudinal thin film media

    Dova, P.

    1998-09-01

    Magnetic characterisation techniques, as applied to longitudinal thin film media, have been investigated. These included the study of the differentials of the remanence curves, the delta-M plot and the examination of the critical volumes. Several thin film structures, which are currently used or are being considered for future media applications, have been examined using these techniques. Most of the films were Co-alloys with the exception of a set of Barium ferrite films. Both monolayer and multilayer structures were studied. It was found that the study of activation volumes provides a better insight into the reversal mechanisms of magnetic media, especially in the case of complex structures such as multilayer films and films with bicrystal microstructure. Furthermore, an evaluation study of different methods of determining critical volumes showed that the method using time dependence measurements and the micromagnetic approach is the most appropriate. The magnetic characteristics of the thin film media under investigation were correlated with their microstructure and, where possible, with their noise performance. Magnetic force microscopy was also used for acquiring quasi-domain images in the ac-demagnetised state. It was found that in all Co-alloy films the dominant intergranular coupling is magnetising in nature, the level of which is governed by the Cr content in the magnetic layer. In the case of laminated media it was found that when non-magnetic spacers are used, the nature of the interlayer coupling depends on the spacer thickness. In double layer structures with no spacer, the top layer replicates the crystallographic texture of the bottom layer, and the overall film properties are a combination of the two layers. In bicrystal films the coupling is determined by the Cr segregation in the grain boundaries. Furthermore, the presence of stacking faults in bicrystal films deteriorates their thermal stability, but can be prevented by improving the epitaxial

  20. Vibration welding system with thin film sensor

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  1. Solid surfaces, interfaces and thin films

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  2. Thin films for the manipulation of light

    Piegari, Angela; Sytchkova, Anna

    2015-01-01

    The manipulation of light is typically accomplished by a series of optical surfaces on which the incident beam is reflected, or through which the beam is transmitted. Thin film coatings help to modify the behavior of such surfaces for obtaining the desired result: antireflection coatings to reduce reflection losses, high-reflectance mirrors, filters to divide or combine beams of different wavelengths, and many other types. The amount of light that is transmitted or reflected depends on the optical parameters of the materials and on interference phenomena in thin-film structures. Dedicated software is available to design the proper coating for each requirement. There are several applications of optical thin films, many of them are useful in the everyday life, many others are dedicated to scientific purposes, as will be described in this paper [it

  3. Thin Film Photovoltaic/Thermal Solar Panels

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  4. Nanostructured thin films and coatings mechanical properties

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  5. Solid Surfaces, Interfaces and Thin Films

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  6. Domains in Ferroic Crystals and Thin Films

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  7. Thin film oxygen partial pressure sensor

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  8. Magnetite thin films: A simulational approach

    Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent ν=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed

  9. Feasibility Study of Thin Film Thermocouple Piles

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  10. Self-standing chitosan films as dielectrics in organic thin-film transistors

    J. Morgado

    2013-12-01

    Full Text Available Organic thin film transistors, using self-standing 50 µm thick chitosan films as dielectric, are fabricated using sublimed pentacene or two conjugated polymers deposited by spin coating as semiconductors. Field-effect mobilities are found to be similar to values obtained with other dielectrics and, in the case of pentacene, a value (0.13 cm2/(V•s comparable to high performing transistors was determined. In spite of the low On/Off ratios (a maximum value of 600 was obtained for the pentacene-based transistors, these are promising results for the area of sustainable organic electronics in general and for biocompatible electronics in particular.

  11. Novel chemical analysis for thin films

    Usui, Toshio; Kamei, Masayuki; Aoki, Yuji; Morishita, Tadataka; Tanaka, Shoji

    1991-01-01

    Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50A- and 125A-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125A-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t = 0deg-3deg, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81deg). In addition, the intensity of the AuM line emitted from the 50A-thick Au thin film was also sufficiently strong for chemical analysis. (author)

  12. Aerodynamic Characterization of a Thin, High-Performance Airfoil for Use in Ground Fluids Testing

    Broeren, Andy P.; Lee, Sam; Clark, Catherine

    2013-01-01

    The FAA has worked with Transport Canada and others to develop allowance times for aircraft operating in ice-pellet precipitation. Wind-tunnel testing has been carried out to better understand the flowoff characteristics and resulting aerodynamic effects of anti-icing fluids contaminated with ice pellets using a thin, high-performance wing section at the National Research Council of Canada Propulsion and Icing Wind Tunnel. The objective of this paper is to characterize the aerodynamic behavior of this wing section in order to better understand the adverse aerodynamic effects of anti-icing fluids and ice-pellet contamination. Aerodynamic performance data, boundary-layer surveys and flow visualization were conducted at a Reynolds number of approximately 6.0×10(exp 6) and a Mach number of 0.12. The clean, baseline model exhibited leading-edge stall characteristics including a leading-edge laminar separation bubble and minimal or no separation on the trailing edge of the main element or flap. These results were consistent with expected 2-D aerodynamics and showed no anomalies that could adversely affect the evaluation of anti-icing fluids and ice-pellet contamination on the wing. Tests conducted with roughness and leading-edge flow disturbances helped to explain the aerodynamic impact of the anti-icing fluids and contamination. The stalling characteristics of the wing section with fluid and contamination appear to be driven at least partially by the effects of a secondary wave of fluid that forms near the leading edge as the wing is rotated in the simulated takeoff profile. These results have provided a much more complete understanding of the adverse aerodynamic effects of anti-icing fluids and ice-pellet contamination on this wing section. This is important since these results are used, in part, to develop the ice-pellet allowance times that are applicable to many different airplanes.

  13. High Performance Thin Layer Chromatography method for analysis of 3,4-methylenedioxymethamphetamine in seized tablets

    Boris E. Duffau

    2015-12-01

    Full Text Available Context: Consumption of synthetic drugs had increased in recent years, used as a recreational drug by young people who presume that consumption of this drug is harmless for health; however clinical studies have shown that this stimulant and its metabolites are toxic. Due to these reasons, chemical analysis of this illicit drug is crucial from the points of view of occupational medicine, toxicology, and law enforcement with the aim of pursuit the traffic of illegal drug. Aims: Implement and fully validate a rapid and simple method for detection and quantitation of MDMA by High-Performance Thin Layer Chromatography in seized samples. Methods: With the implemented method was analyzed 12 positive samples seized by Chilean police, to found the concentration of MDMA in ecstasy tablets. Results: The method was fully validated, the linearity of the method was evaluated by the calibration curve between 51.0 – 510.0 µg/band (R2 0.9977; limit of detection was 12.1 µg per band, and limit of quantitation was 36.8 µg per band. The precision of the method (RSD was lower than 5.0%. Accuracy was evaluated by determination of the percentage of MDMA recovered by the assay (99.13%, and relative Uncertainty was 6.66%. With this method, it was analyzed real seized samples of MDMA, results showed that all samples contained MDMA and concentration was between 18.15 – 59.84 % w/w. Conclusions: The method is selective, sensitive, and specific, with possible application in forensic analysis. To the best of our knowledge, this is the first report about concentration of MDMA in ecstasy pills in Chile.

  14. Perovskite Thin Films via Atomic Layer Deposition

    Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

    2014-01-01

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  15. Perovskite Thin Films via Atomic Layer Deposition

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  16. Mechanical integrity of thin films

    Hoffman, R.W.

    1979-01-01

    Mechanical considerations starting with the initial film deposition including questions of adhesion and grading the interface are reviewed. Growth stresses, limiting thickness, stress relief, control aging, and creep are described

  17. Mesoscale simulations of confined Nafion thin films

    Vanya, P.; Sharman, J.; Elliott, J. A.

    2017-12-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

  18. Processing of thin SU-8 films

    Keller, Stephan; Blagoi, Gabriela; Lillemose, Michael; Haefliger, Daniel; Boisen, Anja

    2008-01-01

    This paper summarizes the results of the process optimization for SU-8 films with thicknesses ≤5 µm. The influence of soft-bake conditions, exposure dose and post-exposure-bake parameters on residual film stress, structural stability and lithographic resolution was investigated. Conventionally, the SU-8 is soft-baked after spin coating to remove the solvent. After the exposure, a post-exposure bake at a high temperature T PEB ≥ 90 °C is required to cross-link the resist. However, for thin SU-8 films this often results in cracking or delamination due to residual film stress. The approach of the process optimization is to keep a considerable amount of the solvent in the SU-8 before exposure to facilitate photo-acid diffusion and to increase the mobility of the monomers. The experiments demonstrate that a replacement of the soft-bake by a short solvent evaporation time at ambient temperature allows cross-linking of the thin SU-8 films even at a low T PEB = 50 °C. Fourier-transform infrared spectroscopy is used to confirm the increased cross-linking density. The low thermal stress due to the reduced T PEB and the improved structural stability result in crack-free structures and solve the issue of delamination. The knowledge of the influence of different processing parameters on the responses allows the design of optimized processes for thin SU-8 films depending on the specific application

  19. Thin films prepared from tungstate glass matrix

    Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

    2008-01-30

    Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.

  20. Size and dimensionality effects in superconducting Mo thin films

    Fabrega, L; Gil, O; Camon, A; Parra-BorderIas, M; Fernandez-MartInez, I; Costa-Kraemer, J L; Briones, F; Sese, J; Gonzalez-Arrabal, R

    2011-01-01

    Molybdenum is a low T c , type I superconductor whose fundamental properties are poorly known. Its importance as an essential constituent of new high performance radiation detectors, the so-called transition edge sensors (TESs) calls for better characterization of this superconductor, especially in thin film form. Here we report on a study of the basic superconducting features of Mo thin films as a function of their thickness. The resistivity is found to rise and the critical temperature decreases on decreasing film thickness, as expected. More relevant, the critical fields along and perpendicular to the film plane are markedly different, thickness dependent and much larger than the thermodynamic critical field of Mo bulk. These results are consistent with a picture of type II 2D superconducting films, and allow estimates of the fundamental superconducting lengths of Mo. The role of morphology in determining the 2D and type II character of the otherwise type I molybdenum is discussed. The possible consequences of this behaviour on the performance of radiation detectors are also addressed.

  1. In situ identification of high-performance thin-layer chromatography spots by fourier transform surface-enhanced Raman scattering

    Koglin, Eckhardt; Kramer, Hella; Sawatski, Juergen; Lehner, Carolin; Hellman, Janice L.

    1994-01-01

    FT-SERS has been used to identify samples supported on high-performance thin-layer chromatography plates. The TLC plates were sprayed with colloidal silver solutions which resulted in enhancement of the FT-Raman scattering of these biologically and environmentally important compounds.

  2. Atomic Structure Control of Silica Thin Films on Pt(111)

    Crampton, Andrew S; Ridge, Claron J.; Rö tzer, Marian David; Zwaschka, Gregor; Braun, Thomas; D'Elia, Valerio; Basset, Jean-Marie; Schweinberger, Florian Frank; Gü nther, Sebastian; Heiz, Ueli

    2015-01-01

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly

  3. Optical characterization of niobium pentoxide thin films

    Pawlicka, A.

    1996-01-01

    Thin films of Nb 2 O 5 were obtained by sol-gel method using ultrasonic irradiation and deposited by dip-coating technique. After calcination at temperatures superior than 500 deg C these films (300 nm thick) were characterized by cyclic voltametry and cronoamperometry. The memory measurements, color efficiency, optical density as a function of wave number and applied potential were effectuated to determine their electrochromic properties. The study of electrochromic properties of these films shows that the insertion process of lithium is reversible and changes their coloration from transparent (T=80%) to dark blue (T=20%). (author)

  4. Electrical resistivity of ferrimagnetic magnetite thin film

    Varshney, Dinesh; Yogi, A.; Kaurav, N.; Gupta, R.P.; Phase, D.M.

    2006-01-01

    We have grown Fe 3 O 4 (III) epitaxial film on Al 2 O 3 (0001) substrate by pulsed laser deposition, with thickness of 130 nm. X-ray diffraction studies of magnetite show the spinel cubic structure of film with preferential (III) orientation. The electrical resistivity measurement demonstrates that the properties of thin film of magnetite are basically similar to those of bulk magnetite and clearly shows semiconductor-insulator transition at Verwey transition temperature (≅140 K). We have found higher Verwey transition temperature when compared with earlier reports on similar type of system. Possible causes for increase in transition temperature are discussed. (author)

  5. Surface Plasmon Waves on Thin Metal Films.

    Craig, Alan Ellsworth

    Surface-plasmon polaritons propagating on thin metal films bounded by dielectrics of nearly equal refractive indexes comprise two bound modes. Calculations indicate that, while the modes are degenerate on thick films, both the real and the imaginary components of the propagation constants for the modes split into two branches on successively thinner films. Considering these non-degenerate modes, the mode exhibiting a symmetric (antisymmetric) transverse profile of the longitudinally polarized electric field component, has propagation constant components both of which increase (decrease) with decreasing film thickness. Theoretical propagation constant eigenvalue (PCE) curves have been plotted which delineate this dependence of both propagation constant components on film thickness. By means of a retroreflecting, hemispherical glass coupler in an attenuated total reflection (ATR) configuration, light of wavelength 632.8 nm coupled to the modes of thin silver films deposited on polished glass substrates. Lorentzian lineshape dips in the plots of reflectance vs. angle of incidence indicate the presence of the plasmon modes. The real and imaginary components of the propagation constraints (i.e., the propagation constant and loss coefficient) were calculated from the angular positions and widths of the ATR resonances recorded. Films of several thicknesses were probed. Results which support the theoretically predicted curves were reported.

  6. New techniques for producing thin boron films

    Thomas, G.E.

    1988-01-01

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  7. Intelligent Processing of Ferroelectric Thin Films

    1994-05-31

    unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

  8. Tailored piezoelectric thin films for energy harvester

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and

  9. Amperometric Noise at Thin Film Band Electrodes

    Larsen, Simon T.; Heien, Michael L.; Taboryski, Rafael

    2012-01-01

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive...

  10. Stabilized thin film heterostructure for electrochemical applications

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  11. Reliability growth of thin film resistors contact

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  12. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager

    2015-01-01

    Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A/...

  13. Flexible thin-film NFC tags

    Myny, K.; Tripathi, A.K.; Steen, J.L. van der; Cobb, B.

    2015-01-01

    Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance

  14. Magnetic surfaces, thin films, and multilayers

    Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

    1992-01-01

    This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

  15. Electrical characterization of thin film ferroelectric capacitors

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  16. Internal stress control of boron thin film

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M.

    1998-01-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s -1 and substrate temperature of 300 C. (orig.)

  17. Correlated dewetting patterns in thin polystyrene films

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  18. Correlated dewetting patterns in thin polystyrene films

    Neto, Chiara; Jacobs, Karin; Seemann, Ralf; Blossey, Ralf; Becker, Juergen; Gruen, Guenther

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes

  19. Rim instability of bursting thin smectic films

    Trittel, Torsten; John, Thomas; Tsuji, Kinko; Stannarius, Ralf

    2013-05-01

    The rupture of thin smectic bubbles is studied by means of high speed video imaging. Bubbles of centimeter diameter and film thicknesses in the nanometer range are pierced, and the instabilities of the moving rim around the opening hole are described. Scaling laws describe the relation between film thickness and features of the filamentation process of the rim. A flapping motion of the retracting smectic film is assumed as the origin of the observed filamentation instability. A comparison with similar phenomena in soap bubbles is made. The present experiments extend studies on soap films [H. Lhuissier and E. Villermaux, Phys. Rev. Lett. 103, 054501 (2009), 10.1103/PhysRevLett.103.054501] to much thinner, uniform films of thermotropic liquid crystals.

  20. Internal stress control of boron thin film

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M. [Osaka Univ., Suita (Japan). Graduate Sch. of Eng.

    1998-09-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s{sup -1} and substrate temperature of 300 C. (orig.) 12 refs.

  1. Dielectric loss of strontium titanate thin films

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  2. Thin film preparation of semiconducting iron pyrite

    Smestad, Greg P.; Ennaoui, Ahmed; Fiechter, Sebastian; Hofmann, Wolfgang; Tributsch, Helmut; Kautek, Wolfgang

    1990-08-01

    Pyrite (Fe52) has been investigated as a promising new absorber material for thin film solar cell applications because of its high optical absorption coefficient of 1OL cm1, and its bandgap of 0.9 to 1.0 eV. Thin layers have been prepared by Metal Organic Chemical Vapor Deposition, MOCVD, Chemical Spray Pyrolysis, CSP, Chemical Vapor Transport, CVT, and Sulfurization of Iron Oxide films, 510. It is postulated that for the material FeS2, if x is not zero, a high point defect concentration results from replacing 2 dipoles by single S atoms. This causes the observed photovoltages and solar conversion efficiencies to be lower than expected. Using the Fe-O-S ternary phase diagram and the related activity plots, a thermodynamic understanding is formulated for the resulting composition of each of these types of films. It is found that by operating in the oxide portion of the phase diagram, the resulting oxidation state favors pyrite formation over FeS. By proper orientation of the grains relative to the film surface, and by control of pinholes and stoichiometry, an efficient thin film photovolatic solar cell material could be achieved.

  3. Separation of pigment formulations by high-performance thin-layer chromatography with automated multiple development.

    Stiefel, Constanze; Dietzel, Sylvia; Endress, Marc; Morlock, Gertrud E

    2016-09-02

    Food packaging is designed to provide sufficient protection for the respective filling, legally binding information for the consumers like nutritional facts or filling information, and an attractive appearance to promote the sale. For quality and safety of the package, a regular quality control of the used printing materials is necessary to get consistently good print results, to avoid migration of undesired ink components into the food and to identify potentially faulty ink batches. Analytical approaches, however, have hardly been considered for quality assurance so far due to the lack of robust, suitable methods for the analysis of rarely soluble pigment formulations. Thus, a simple and generic high-performance thin-layer chromatography (HPTLC) method for the separation of different colored pigment formulations was developed on HPTLC plates silica gel 60 by automated multiple development. The gradient system provided a sharp resolution for differently soluble pigment constituents like additives and coating materials. The results of multi-detection allowed a first assignment of the differently detectable bands to particular chemical substance classes (e.g., lipophilic components), enabled the comparison of different commercially available pigment batches and revealed substantial variations in the composition of the batches. Hyphenation of HPTLC with high resolution mass spectrometry and infrared spectroscopy allowed the characterization of single unknown pigment constituents, which may partly be responsible for known quality problems during printing. The newly developed, precise and selective HPTLC method can be used as part of routine quality control for both, incoming pigment batches and monitoring of internal pigment production processes, to secure a consistent pigment composition resulting in consistent ink quality, a faultless print image and safe products. Hyphenation of HPTLC with the A. fischeri bioassay gave first information on the bioactivity or rather

  4. Electrochemical fabrication of nanoporous polypyrrole thin films

    Li Mei [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China); Yuan Jinying [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: yuanjy@mail.tsinghua.edu.cn; Shi Gaoquan [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: gshi@mail.tsinghua.edu.cn

    2008-04-30

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. {sigma}{sub rt} {approx} 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90{sup o}/s at a driving potential of 0.8 V (vs. Ag/AgCl)

  5. Dynamics in thin folded polymer films

    Croll, Andrew; Rozairo, Damith

    Origami and Kirigami inspired structures depend on a complex interplay between geometry and material properties. While clearly important to the overall function, very little attention has focused on how extreme curvatures and singularities in real materials influence the overall dynamic behaviour of folded structures. In this work we use a set of three polymer thin films in order to closely examine the interaction of material and geometry. Specifically, we use polydimethylsiloxane (PDMS), polystyrene (PS) and polycarbonate (PC) thin films which we subject to loading in several model geometries of varying complexity. Depending on the material, vastly different responses are noted in our experiments; D-cones can annihilate, cut or lead to a crumpling cascade when pushed through a film. Remarkably, order can be generated with additional perturbation. Finally, the role of adhesion in complex folded structures can be addressed. AFOSR under the Young Investigator Program (FA9550-15-1-0168).

  6. High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-08-01

    High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

  7. Harnessing the Sun with Thin Film Photovoltaics: Preprint

    Birkmire, R. W.; Kazmerski, L. L.

    1999-01-01

    Photovoltaic (PV) technologies have a substantial role in meeting electric power needs in the next century, especially with an expected competitive position compared to conventional power-generation and other renewable- energy technologies. Thin-film photovoltaic modules based on CdTe, CuInSe2 or Si can potentially be produced by economical, high-volume manufacturing techniques, dramatically reducing component cost. However, the translation of laboratory thin-film technologies to first-time, large-scale manufacturing has been much more difficult than expected. This is due to the complexity of the processes involved for making large-area PV modules at high rates and with high yields, and compounded by the lack of a fundamental scientific and engineering base required to properly engineer and operate manufacturing equipment. In this paper, we discuss the need to develop diagnostics tools and associated predictive models that quantitatively assess processing conditions and pro duct properties. Incorporation of the diagnostic sensors into both laboratory reactors and manufacturing facilities will (1) underpin the development of solar cells with improved efficiency, and (2) accelerate the scale-up process through intelligent process-control schemes. ''Next-generation'' high-performance (e.g., and gt;25% conversion efficiency) thin-film PV modules will also be assessed, along with critical issues associated with their development

  8. Development and validation of high-performance liquid chromatography and high-performance thin-layer chromatography methods for the quantification of khellin in Ammi visnaga seed

    Kamal, Abid; Khan, Washim; Ahmad, Sayeed; Ahmad, F. J.; Saleem, Kishwar

    2015-01-01

    Objective: The present study was used to design simple, accurate and sensitive reversed phase-high-performance liquid chromatography RP-HPLC and high-performance thin-layer chromatography (HPTLC) methods for the development of quantification of khellin present in the seeds of Ammi visnaga. Materials and Methods: RP-HPLC analysis was performed on a C18 column with methanol: Water (75: 25, v/v) as a mobile phase. The HPTLC method involved densitometric evaluation of khellin after resolving it on silica gel plate using ethyl acetate: Toluene: Formic acid (5.5:4.0:0.5, v/v/v) as a mobile phase. Results: The developed HPLC and HPTLC methods were validated for precision (interday, intraday and intersystem), robustness and accuracy, limit of detection and limit of quantification. The relationship between the concentration of standard solutions and the peak response was linear in both HPLC and HPTLC methods with the concentration range of 10–80 μg/mL in HPLC and 25–1,000 ng/spot in HPTLC for khellin. The % relative standard deviation values for method precision was found to be 0.63–1.97%, 0.62–2.05% in HPLC and HPTLC for khellin respectively. Accuracy of the method was checked by recovery studies conducted at three different concentration levels and the average percentage recovery was found to be 100.53% in HPLC and 100.08% in HPTLC for khellin. Conclusions: The developed HPLC and HPTLC methods for the quantification of khellin were found simple, precise, specific, sensitive and accurate which can be used for routine analysis and quality control of A. visnaga and several formulations containing it as an ingredient. PMID:26681890

  9. High performance ZnO:Al films deposited on PET substrates using facing target sputtering

    Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

    2013-10-01

    ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10-3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

  10. High performance ZnO:Al films deposited on PET substrates using facing target sputtering

    Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

    2013-01-01

    ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10 −3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

  11. Magnon dispersion in thin magnetic films

    Balashov, T; Wulfhekel, W; Buczek, P; Sandratskii, L; Ernst, A

    2014-01-01

    Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu 3 Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations. (paper)

  12. Magnon dispersion in thin magnetic films.

    Balashov, T; Buczek, P; Sandratskii, L; Ernst, A; Wulfhekel, W

    2014-10-01

    Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu3Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations.

  13. Function and application of ultra thin films

    Sasabe, Hiroyuki

    1988-02-01

    A film 10-100mm thick which is strong dynamically to some extent and has possibility to manifest fuctions of high degree different from the nature extrapolated from the normal thin film is called an ultra thin film. As an example of its concrete application, there is an electro-luminescence element which is made by laminating 5 layers of LB films of poly-L-phenylalanine on a n-GaP and has vapor-deposited gold electrodes. When voltage of 5V is imposed to it, light emission of 565nm can be observed and the emission efficiency of 2% is obtained. Besides, it has an excellent stability through the lapse of time. There is also a junction element and the ion concentration injected into macromolecule films of this element has a Gaussian distribution from the surface towards the direction of depth. Accordingly, the most active domain in terms of semiconductor as the result of doping is the location in the neighborhood of the peak. Furthermore, a photo memory is also proposed. It is applied to the artificial hemoglobine which is made of LB films, suggesting the feasibility of creating the artificial protein capable of functioning in the conditions in which the natural protein is unable to function. (5 figs, 1 tab, 7 refs)

  14. Thin film diamond microstructure applications

    Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

    1991-01-01

    Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

  15. Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

    Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

    2017-08-15

    Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

  16. Thin film bismuth iron oxides useful for piezoelectric devices

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  17. Nanostructured thin film coatings with different strengthening effects

    Panfilov Yury

    2017-01-01

    Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

  18. Physical Vapor Deposition of Thin Films

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  19. Flexible magnetic thin films and devices

    Sheng, Ping; Wang, Baomin; Li, Runwei

    2018-01-01

    Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

  20. Nanocomposite thin films for triggerable drug delivery.

    Vannozzi, Lorenzo; Iacovacci, Veronica; Menciassi, Arianna; Ricotti, Leonardo

    2018-05-01

    Traditional drug release systems normally rely on a passive delivery of therapeutic compounds, which can be partially programmed, prior to injection or implantation, through variations in the material composition. With this strategy, the drug release kinetics cannot be remotely modified and thus adapted to changing therapeutic needs. To overcome this issue, drug delivery systems able to respond to external stimuli are highly desirable, as they allow a high level of temporal and spatial control over drug release kinetics, in an operator-dependent fashion. Areas covered: On-demand drug delivery systems actually represent a frontier in this field and are attracting an increasing interest at both research and industrial level. Stimuli-responsive thin films, enabled by nanofillers, hold a tremendous potential in the field of triggerable drug delivery systems. The inclusion of responsive elements in homogeneous or heterogeneous thin film-shaped polymeric matrices strengthens and/or adds intriguing properties to conventional (bare) materials in film shape. Expert opinion: This Expert Opinion review aims to discuss the approaches currently pursued to achieve an effective on-demand drug delivery, through nanocomposite thin films. Different triggering mechanisms allowing a fine control on drug delivery are described, together with current challenges and possible future applications in therapy and surgery.

  1. Optical thin films and coatings from materials to applications

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  2. Temperature dependence of LRE-HRE-TM thin films

    Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

    2003-04-01

    Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

  3. Application-related properties of giant magnetostrictive thin films

    Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

    2002-01-01

    In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

  4. In situ annealing of hydroxyapatite thin films

    Johnson, Shevon; Haluska, Michael; Narayan, Roger J.; Snyder, Robert L.

    2006-01-01

    Hydroxyapatite is a bioactive ceramic that mimics the mineral composition of natural bone. Unfortunately, problems with adhesion, poor mechanical integrity, and incomplete bone ingrowth limit the use of many conventional hydroxyapatite surfaces. In this work, we have developed a novel technique to produce crystalline hydroxyapatite thin films involving pulsed laser deposition and postdeposition annealing. Hydroxyapatite films were deposited on Ti-6Al-4V alloy and Si (100) using pulsed laser deposition, and annealed within a high temperature X-ray diffraction system. The transformation from amorphous to crystalline hydroxyapatite was observed at 340 deg. C. Mechanical and adhesive properties were examined using nanoindentation and scratch adhesion testing, respectively. Nanohardness and Young's modulus values of 3.48 and 91.24 GPa were realized in unannealed hydroxyapatite films. Unannealed and 350 deg. C annealed hydroxyapatite films exhibited excellent adhesion to Ti-6Al-4V alloy substrates. We anticipate that the adhesion and biological properties of crystalline hydroxyapatite thin films may be enhanced by further consideration of deposition and annealing parameters

  5. Thermal conductivities of thin, sputtered optical films

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  6. Electromagnetic properties of thin film lead superconductors

    Moriyama, K.

    1978-01-01

    The dependence of critical film magnetic field H/sub cf/ on temperature, thickness, and surface texture of lead superconducting films was investigated, as well as the relationship between the applied magnetic field and the applied current at the critical field. Temperature and thickness dependence data were consistent with the predictions of London, of Ginzburg, and of Bardeen, Cooper, and Schreiffer. The values of H/sub cf/ of lead films deposited on a rough surface were consistently lower than for those on a smooth surface and so were not in agreement with any currently accepted theory. The degree of lowering of H/sub cf/ by a rough surface was greater in thin films than in thick films. The expected dependence of penetration depth lambda on thickness d was not observed, and the range of lambda was somewhat greater than expected. The range of coherence length was greater than predicted. The prediction for temperature dependence of critical current by Glover and Coffey was found to involve some oversimplification, and a suggested correction is supported by the data. For applied magnetic fields perpendicular to the applied current and parallel to the film surface, the relationship between the critical values of the magnetic field and the current was as predicted for lead films by Alphonse and Bergstein

  7. Multiferroic oxide thin films and heterostructures

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  8. Domain switching of fatigued ferroelectric thin films

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-05-01

    We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  9. Domain switching of fatigued ferroelectric thin films

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  10. Highly coercive thin-film nanostructures

    Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

    2005-01-01

    The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

  11. High efficiency thin-film solar cells

    Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

    2012-11-01

    Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)

  12. Quantifying clustering in disordered carbon thin films

    Carey, J.D.

    2006-01-01

    The quantification of disorder and the effects of clustering in the sp 2 phase of amorphous carbon thin films are discussed. The sp 2 phase is described in terms of disordered nanometer-sized conductive sp 2 clusters embedded in a less conductive sp 3 matrix. Quantification of the clustering of the sp 2 phase is estimated from optical as well as from electron and nuclear magnetic resonance methods. Unlike in other disordered group IV thin film semiconductors, we show that care must be exercised in attributing a meaning to the Urbach energy extracted from absorption measurements in the disordered carbon system. The influence of structural disorder, associated with sp 2 clusters of similar size, and topological disorder due to undistorted clusters of different sizes is also discussed. Extensions of this description to other systems are also presented

  13. Thin film photovoltaic panel and method

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  14. Strain quantification in epitaxial thin films

    Cushley, M

    2008-01-01

    Strain arising in epitaxial thin films can be beneficial in some cases but devastating in others. By altering the lattice parameters, strain may give a thin film properties hitherto unseen in the bulk material. On the other hand, heavily strained systems are prone to develop lattice defects in order to relieve the strain, which can cause device failure or, at least, a decrease in functionality. Using convergent beam electron diffraction (CBED) and high-resolution transmission electron microscopy (HRTEM), it is possible to determine local strains within a material. By comparing the results from CBED and HRTEM experiments, it is possible to gain a complete view of a material, including the strain and any lattice defects present. As well as looking at how the two experimental techniques differ from each other, I will also look at how results from different image analysis algorithms compare. Strain in Si/SiGe samples and BST/SRO/MgO capacitor structures will be discussed.

  15. Method of formation of thin film component

    Wada, Chikara; Kato, Kinya

    1988-04-16

    In the production process of component which is carrying thin film device, such as thin film transistor, acid treatment is applied for etching or for preventing contamination. In case of barium borsilicate glass base, the base is affected by the acid treatment resulting the decrease of transparency. To avoid the effect, deposition of SiO/sub 2/ layer on the surface of the base is usually applied. This invention relates to the protective method of barium borosilicate surface by harnessing the effect of coexisting ion in the acid treatment bath. The method is to add 0.03-5 mol/l of phosphoric acid or its salt in the bath. By the effect of coexisting ion, barium borsilicate glass surface was protected from the damage. (2 figs)

  16. Flexible Electrode Design: Fabrication of Freestanding Polyaniline-Based Composite Films for High-Performance Supercapacitors.

    Khosrozadeh, Ali; Darabi, Mohammad Ali; Xing, Malcolm; Wang, Quan

    2016-05-11

    Polyaniline (PANI) is a promising pseudocapacitance electrode material. However, its structural instability leads to low cyclic stability and limited rate capability which hinders its practical applications. In view of the limitations, flexible PANI-based composite films are developed to improve the electrochemical performance of electrode materials. We report in the research a facile and cost-effective approach for fabrication of a high-performance supercapacitor (SC) with excellent cyclic stability and tunable energy and power densities. SC electrode containing a very high mass loading of active materials is a flexible film of PANI, tissue wiper-based cellulose, graphite-based exfoliated graphite (ExG), and silver nanoparticles with potential applications in wearable electronics. The optimum preparation weight ratios of silver nitrate/aniline and ExG/aniline used in the research are estimated to be 0.18 and 0.65 (or higher), respectively. Our results show that an ultrahigh capacitance of 3.84 F/cm(2) (240.10 F/g) at a discharge rate of 5 mA can be achieved. In addition, our study shows that the power density can be increased from 1531.3 to 3000 W/kg by selecting the weight ratio of ExG/aniline to be more than 0.65, with a sacrifice in the energy density. The obtained promising electrochemical properties are found to be mainly attributed to an effective combination of PANI, ExG, cushiony cellulose scaffold, and silver as well as the porosity of the composite.

  17. Thin film solar cell technology in Germany

    Diehl, W.; Sittinger, V.; Szyszka, B.

    2005-01-01

    Within the scope of limited nonrenewable energy resources and the limited capacity of the ecosystem for greenhouse gases and nuclear waste, sustainability is one important target in the future. Different energy scenarios showed the huge potential for photovoltaics (PV) to solve this energy problem. Nevertheless, in the last decade, PV had an average growth rate of over 20% per year. In 2002, the solar industry delivered more than 500 MWp/year of photovoltaic generators [A. Jaeger-Waldau, A European Roadmap for PV R and D, E-MRS Spring Meeting, (2003)]. More than 85% of the current production involves crystalline silicon technologies. These technologies still have a high cost reduction potential, but this will be limited by the silicon feedstock. On the other hand the so-called second generation thin film solar cells based on a-Si, Cu(In,Ga)(Se,S 2 (CIGS) or CdTe have material thicknesses of a few microns as a result of their direct band gap. Also, the possibility of circuit integration offers an additional cost reduction potential. Especially in Germany, there are a few companies who focus on thin film solar cells. Today, there are two manufacturers with production lines: the Phototronics (PST) division of RWE-Schott Solar with a-Si thin film technology and the former Antec Solar GmbH (now Antec Solar Energy GmbH) featuring the CdTe technology. A pilot line based on CIGS technology is run by Wuerth Solar GmbH. There is also a variety of research activity at other companies, namely, at Shell Solar, Sulfurcell Solartechnik GmbH, Solarion GmbH and the CIS-Solartechnik GmbH. We will give an overview on research activity on various thin film technologies, as well as different manufacturing and production processes in the companies mentioned above. (Author)

  18. Optical characterization of thin solid films

    Ohlídal, Miloslav

    2018-01-01

    This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

  19. Thin-film silicon solar cell technology

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  20. The carbonization of thin polyaniline films

    Morávková, Zuzana; Trchová, Miroslava; Exnerová, Milena; Stejskal, Jaroslav

    2012-01-01

    Roč. 520, č. 19 (2012), s. 6088-6094 ISSN 0040-6090 R&D Projects: GA AV ČR IAA400500905; GA AV ČR IAA100500902; GA ČR GAP205/12/0911 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : polyaniline * thin films * infrared spectroscopy Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.604, year: 2012

  1. Study of obliquely deposited thin cobalt films

    Szmaja, W.; Kozlowski, W.; Balcerski, J.; Kowalczyk, P.J.; Grobelny, J.; Cichomski, M.

    2010-01-01

    Research highlights: → The paper reports simultaneously on the magnetic domain structure of obliquely deposited thin cobalt films (40 nm and 100 nm thick) and their morphological structure. Such studies are in fact rare (Refs. cited in the paper). → Moreover, to our knowledge, observations of the morphological structure of these films have not yet been carried out simultaneously by transmission electron microscopy (TEM) and atomic force microscopy (AFM). → The films of both thicknesses were found to have uniaxial in-plane magnetic anisotropy. → The magnetic microstructure of the films 40 nm thick was composed of domains running and magnetized predominantly in the direction perpendicular to the incidence plane of the vapor beam. → As the film thickness was changed from 40 nm to 100 nm, the magnetic anisotropy was observed to change from the direction perpendicular to parallel with respect to the incidence plane. → Thanks to the application of TEM and AFM, complementary information on the morphological structure of the films could be obtained. → In comparison with TEM images, AFM images revealed grains larger in size and slightly elongated in the direction perpendicular rather than parallel to the incidence plane. → These experimental findings clearly show that surface diffusion plays an important role in the process of film growth. → For the films 40 nm thick, the alignment of columnar grains in the direction perpendicular to the incidence plane was observed. → This correlates well with the magnetic domain structure of these films. → For the films 100 nm thick, the perpendicular alignment of columnar grains could also be found, although in fact with larger difficulty. → TEM studies showed that the films consisted mainly of the hexagonal close-packed (HCP) crystalline structure, but no preferred crystallographic orientation of the grains could be detected for the films of both thicknesses. → For the films 100 nm thick, the alignment of

  2. P-type CuxS thin films: Integration in a thin film transistor structure

    Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

    2013-01-01

    Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

  3. Neutron reflectivity of electrodeposited thin magnetic films

    Cooper, Joshaniel F.K.; Vyas, Kunal N.; Steinke, Nina-J.; Love, David M.; Kinane, Christian J.; Barnes, Crispin H.W.

    2014-01-01

    Highlights: • Electrodeposited magnetic bi-layers were measured by polarised neutron reflectivity. • When growing a CoNiCu alloy from a single bath a Cu rich region is initially formed. • This Cu rich region is formed in the first layer but not subsequent ones. • Ni deposition is inhibited in thin film growth and Co deposits anomalously. • Alloy magnetism and neutron scattering length give a self-consistent model. - Abstract: We present a polarised neutron reflectivity (PNR) study of magnetic/non-magnetic (CoNiCu/Cu) thin films grown by single bath electrodeposition. We find that the composition is neither homogeneous with time, nor consistent with bulk values. Instead an initial, non-magnetic copper rich layer is formed, around 2 nm thick. This layer is formed by the deposition of the dilute, but rapidly diffusing, Cu 2+ ions near the electrode surface at the start of growth, before the region is depleted and the deposition becomes mass transport limited. After the region has been depleted, by growth etc., this layer does not form and thus may be prevented by growing a copper buffer layer immediately preceding the magnetic layer growth. As has been previously found, cobalt deposits anomalously compared to nickel, and even inhibits Ni deposition in thin films. The layer magnetisation and average neutron scattering length are fitted independently but both depend upon the alloy composition. Thus these parameters can be used to check for model self-consistency, increasing confidence in the derived composition

  4. Preventing Thin Film Dewetting via Graphene Capping.

    Cao, Peigen; Bai, Peter; Omrani, Arash A; Xiao, Yihan; Meaker, Kacey L; Tsai, Hsin-Zon; Yan, Aiming; Jung, Han Sae; Khajeh, Ramin; Rodgers, Griffin F; Kim, Youngkyou; Aikawa, Andrew S; Kolaczkowski, Mattew A; Liu, Yi; Zettl, Alex; Xu, Ke; Crommie, Michael F; Xu, Ting

    2017-09-01

    A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single-layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Aluminum nitride and nanodiamond thin film microstructures

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  6. Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

    Watanabe, S.

    1984-01-01

    The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

  7. Collective Behavior of Amoebae in Thin Films

    Bae, Albert

    2005-03-01

    We have discovered new aspects of social behavior in Dictyostelium discoideum by culturing high density colonies in liquid media depleted of nutrients in confined geometries by using three different preparations: I. thin (15-40um thick) and II. ultrathin (behavior of cells despite flattening that increased their areas by over an order of magnitude. We also observed that the earliest synchronized response of cells following the onset of starvation, a precursor to aggregation, was hastened by reducing the thickness of the aqueous culture layer. We were surprised to find that the threshold concentration for aggregation was raised by thin film confinement when compared to bulk behavior. Finally, both the ultra thin and microfluidic preparations reveal, with new clarity, vortex states of aggregation.

  8. Balancing hole and electron conduction in ambipolar split-gate thin-film Transistors

    Yoo, H.; Ghittorelli, M.; Lee, D.-K.; Smits, E.C.P.; Gelinck, G.H.; Ahn, H.; Lee, H.-K.; Torricelli, F.; Kim, J.-J.

    2017-01-01

    Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film

  9. Ion beam deposited epitaxial thin silicon films

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  10. Infrared characterization of strontium titanate thin films

    Almeida, B.G.; Pietka, A.; Mendes, J.A.

    2004-01-01

    Strontium titanate thin films have been prepared at different oxygen pressures with various post-deposition annealing treatments. The films were deposited by pulsed laser ablation at room temperature on Si(0 0 1) substrates with a silica buffer layer. Infrared reflectance measurements were performed in order to determine relevant film parameters such as layer thicknesses and chemical composition. The infrared reflectance spectra were fitted by using adequate dielectric function forms for each layer. The fitting procedure provided the extraction of the dielectric functions of the strontium titanate film, the silica layer and the substrate. The as-deposited films are found to be amorphous, and their infrared spectra present peaks corresponding to modes with high damping constants. As the annealing time and temperature increases the strontium titanate layer becomes more ordered so that it can be described by its SrTiO 3 bulk mode parameters. Also, the silica layer grows along with the ordering of the strontium titanate film, due to oxidation during annealing

  11. Superconducting properties of iron chalcogenide thin films

    Paolo Mele

    2012-01-01

    Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

  12. Thermal decomposition of titanium deuteride thin films

    Malinowski, M.E.

    1983-01-01

    The thermal desorption spectra of deuterium from essentially clean titanium deuteride thin films were measured by ramp heating the films in vacuum; the film thicknesses ranged from 20 to 220 nm and the ramp rates varied from 0.5 to about 3 0 C s - 1 . Each desorption spectrum consisted of a low nearly constant rate at low temperatures followed by a highly peaked rate at higher temperatures. The cleanliness and thinness of the films permitted a description of desorption rates in terms of a simple phenomenological model based on detailed balancing in which the low temperature pressure-composition characteristics of the two-phase (α-(α+#betta#)-#betta#) region of the Ti-D system were used as input data. At temperatures below 340 0 C the model predictions were in excellent agreement with the experimentally measured desorption spectra. Interpretations of the spectra in terms of 'decomposition trajectories'' are possible using this model, and this approach is also used to explain deviations of the spectra from the model at temperatures of 340 0 C and above. (Auth.)

  13. Electrical resistivity of thin metal films

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  14. Sulfated cellulose thin films with antithrombin affinity

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  15. Preparation and properties of antimony thin film anode materials

    SU Shufa; CAO Gaoshao; ZHAO Xinbing

    2004-01-01

    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  16. High-Performance Red-Light Photodetector Based on Lead-Free Bismuth Halide Perovskite Film.

    Tong, Xiao-Wei; Kong, Wei-Yu; Wang, You-Yi; Zhu, Jin-Miao; Luo, Lin-Bao; Wang, Zheng-Hua

    2017-06-07

    In this study, we developed a sensitive red-light photodetector (RLPD) based on CsBi 3 I 10 perovskite thin film. This inorganic, lead-free perovskite was fabricated by a simple spin-coating method. Device analysis reveals that the as-assembled RLPD was very sensitive to 650 nm light, with an on/off ratio as high as 10 5 . The responsivity and specific detectivity of the device were estimated to be 21.8 A/W and 1.93 × 10 13 Jones, respectively, which are much better than those of other lead halide perovskite devices. In addition, the device shows a fast response (rise time: 0.33 ms; fall time: 0.38 ms) and a high external quantum efficiency (4.13 × 10 3 %). It is also revealed that the RLPD has a very good device stability even after storage for 3 months under ambient conditions. In summary, we suggest that the CsBi 3 I 10 perovskite photodetector developed in this study may have potential applications in future optoelectronic systems.

  17. Structural characterization of vacuum evaporated ZnSe thin films

    The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...

  18. Scanning tunneling spectroscopy of Pb thin films

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  19. Preparation and characterization of vanadium oxide thin films

    Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

    2013-04-16

    The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

  20. Thin film structures and phase stability

    Clemens, B.M.; Johnson, W.L.

    1990-01-01

    This was a two day symposium, with invited and contributed papers as well as an evening poster session. The first day concentrated on solid state reactions with invited talks by Lindsay Greer from the University of Cambridge, King Tu from IBM Yorktown Heights, and Carl Thompson from MIT. Professor Greer observed that the diffusion of Zr is 10 6 times slower than that of Ni in amorphous NiZr, confirming that Ni is the mobile species in solid state amorphization. King Tu explained the formation of metastable phases in this film diffusion couples by the concept of maximum rate of free energy change. Carl Thompson discussed the formation of amorphous phases in metal silicon systems, and discussed a two stage nucleation and growth process. The contributed papers also generated discussion on topics such as phase segregation, amorphous silicide formation, room temperature oxidation of silicon, and nucleation during ion beam irradiation. There was a lively poster session on Monday evening with papers on a wide variety of topics covering the general area of thin film science. The second day had sessions Epitaxy and Multilayer Structure I and II, with the morning focussing on epitaxial and heteroepitaxial growth of thin films. Robin Farrow of IBM Almaden led off with an invited talk where he reported on some remarkable success he and his co-workers have had in growing single crystal epitaxial thin films and superlattices of silver, iron, cobalt and platinum on GaAs. This was followed by several talks on epitaxial growth and characterization. The afternoon focused on interfaces and structure of multilayered materials. A session on possible stress origins of the supermodulus effect was highlighted by lively interaction from the audience. Most of the papers presented at the symposium are presented in this book

  1. Self-Limited Growth in Pentacene Thin Films.

    Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

    2017-04-05

    Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

  2. Theoretical investigation of the thermodynamic properties of metallic thin films

    Hung, Vu Van; Phuong, Duong Dai; Hoa, Nguyen Thi; Hieu, Ho Khac

    2015-01-01

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks

  3. Theoretical investigation of the thermodynamic properties of metallic thin films

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2015-05-29

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  4. PZT Thin Film Piezoelectric Traveling Wave Motor

    Shen, Dexin; Zhang, Baoan; Yang, Genqing; Jiao, Jiwei; Lu, Jianguo; Wang, Weiyuan

    1995-01-01

    With the development of micro-electro-mechanical systems (MEMS), its various applications are attracting more and more attention. Among MEMS, micro motors, electrostatic and electromagnetic, are the typical and important ones. As an alternative approach, the piezoelectric traveling wave micro motor, based on thin film material and integrated circuit technologies, circumvents many of the drawbacks of the above mentioned two types of motors and displays distinct advantages. In this paper we report on a lead-zirconate-titanate (PZT) piezoelectric thin film traveling wave motor. The PZT film with a thickness of 150 micrometers and a diameter of 8 mm was first deposited onto a metal substrate as the stator material. Then, eight sections were patterned to form the stator electrodes. The rotor had an 8 kHz frequency power supply. The rotation speed of the motor is 100 rpm. The relationship of the friction between the stator and the rotor and the structure of the rotor on rotation were also studied.

  5. Solution processed pentacene thin films and their structural properties

    Tao Chunlan; Zhang Xuhui; Zhang Fujia; Liu Yiyang; Zhang Haoli

    2007-01-01

    The paper reported the solution process of pentacene thin films from organic solvent O-dichlorobenzene. The pentacene thin films obtained from different conditions were characterized by X-ray diffraction (XRD), optical microscopy, scanning electron microscopy (SEM), and UV-vis spectroscopy. The result shows that the pentacene solution was successfully obtained at a minimum temperature of 40 deg. C. The optimum temperature of forming pentacene thin films was 100 deg. C

  6. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  7. Phytochemical analysis of ethanolic extract of Dichrostachys Cinerea W and Arn leaves by a thin layer chromatography, high performance thin layer chromatography and column chromatography

    M Vijayalakshmi; K Periyanayagam; K Kavitha; K Akilandeshwari

    2013-01-01

    Background: The leaves of Dichrostachys cinerea are used as laxative, diuretic, painkiller. It is also used in the treatment of gonorrhoea, boils, oedema, gout, veneral diseases and nasopharyngeal affections, etc. Materials and Methods: The Phytochemical investigation of ethanolic extract of D. cinerea leaves were performed by standard chemical tests, thin layer chromatography (TLC) by using various solvent systems, and by high performance liquid chromatography (HPTLC). Two compounds were...

  8. Fabrication of high-performance fluorine doped-tin oxide film using flame-assisted spray deposition

    Purwanto, Agus, E-mail: Aguspur@uns.ac.id [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia); Widiyandari, Hendri [Department of Physics, Faculty of Mathematics and Natural Sciences, Diponegoro University, Jl. Prof. Dr. Soedarto, Tembalang, Semarang 50275 (Indonesia); Jumari, Arif [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia)

    2012-01-01

    A high-performance fluorine-doped tin oxide (FTO) film was fabricated by flame-assisted spray deposition method. By varying the NH{sub 4}F doping concentration, the optimal concentration was established as 8 at.%. X-ray diffractograms confirmed that the as-grown FTO film was tetragonal SnO{sub 2}. In addition, the FTO film was comprised of nano-sized grains ranging from 40 to 50 nm. The heat-treated FTO film exhibited a sheet resistance of 21.8 {Omega}/{open_square} with an average transmittance of 81.9% in the visible region ({lambda} = 400-800 nm). The figures of merit shows that the prepared FTO film can be used for highly efficient dye-sensitized solar cells electrodes.

  9. Tin oxide transparent thin-film transistors

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  10. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    Santiso, José ; Burriel, Mó nica

    2010-01-01

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

  11. Switching, storage, and erasure effects in a superconducting thin film

    Testardi, L.R.

    1976-01-01

    Thin niobium films can be switched from a superconducting to a resistive state permanently by application of a short electrical pulse. Application of a short pulse of opposite polarity returns the film to the superconducting state

  12. CO2 gas sensitivity of sputtered zinc oxide thin films

    TECS

    Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

  13. Physics of thin films advances in research and development

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  14. Sputtering materials for VLSI and thin film devices

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  15. Thin-Film Materials Synthesis and Processing Facility

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  16. Characterizations of photoconductivity of graphene oxide thin films

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  17. ZnO Thin Film Electronics for More than Displays

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  18. Atomic Structure Control of Silica Thin Films on Pt(111)

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  19. Tension Tests of Copper Thin Films

    Park, Kyung Jo; Kim, Chung Youb [Chonnam Nat’l Univ., Gwangju (Korea, Republic of)

    2017-08-15

    Tension tests for copper thin films with thickness of 12 μm were performed by using a digital image correlation method based on consecutive digital images. When calculating deformation using digital image correlation, a large deformation causes errors in the calculated result. In this study, the calculation procedure was improved to reduce the error, so that the full field deformation and the strain of the specimen could be accurately and directly measured on its surface. From the calculated result, it can be seen that the strain distribution is not uniform and its variation is severe, unlike the distribution in a common bulk specimen. This might result from the surface roughness introduced in the films during the fabrication process by electro-deposition.

  20. Seebeck effect of some thin film carbides

    Beensh-Marchwicka, G.; Prociow, E.

    2002-01-01

    Several materials have been investigated for high-temperature thin film thermocouple applications. These include silicon carbide with boron (Si-C-B), ternary composition based on Si-C-Mn, fourfold composition based on Si-C-Zr-B and tantalum carbide (TaC). All materials were deposited on quartz or glass substrates using the pulse sputter deposition technique. Electrical conduction and thermoelectric power were measured for various compositions at 300-550 K. It has been found, that the efficiency of thermoelectric power of films containing Si-C base composition was varied from 0.0015-0.034 μW/cmK 2 . However for TaC the value about 0.093 μW/cmK 2 was obtained. (author)

  1. TEM characterization of nanodiamond thin films.

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  2. Studies of tantalum nitride thin film resistors

    Langley, R.A.

    1975-01-01

    Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

  3. Combining surface enhanced Raman scattering (SERS) and high-performance thin-layer chromatography (HPTLC)

    Koglin, E.

    A new method for preparing SERS active surfaces using silver colloidal spheres deposited on HPTLC plates, used for thin-layer chromatography, is discussed in detail. The sensitivity of these activated HPTLC plates is so high that in-situ vibrational investigations of chromatogram spots are possible at the nanogram level. The HPTLC/SERS spectra of purine, benzoic acid and 1-nitro-pyrene adsorbed on silver colloidal activated silica gel plates are measured in the nanogram region. In addition we also report in this paper on the results of a feasibility study performed to evaluate the analytical potential of micro-Raman spectroscopy (triple monochromator, multichannel detection system) in SERS/HPTLC spot characterization. It permits the acquisition of Raman spectra from HPTLC spots down to 1 μm in size or other forms of microsamples approaching the picogram level in mass.

  4. Methods for producing thin film charge selective transport layers

    Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

    2018-01-02

    Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

  5. Chemical vapour deposition of thin-film dielectrics

    Vasilev, Vladislav Yu; Repinsky, Sergei M

    2005-01-01

    Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

  6. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  7. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  8. Dimensional scaling of perovskite ferroelectric thin films

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  9. Charge versus Energy Transfer Effects in High-Performance Perylene Diimide Photovoltaic Blend Films.

    Singh, Ranbir; Shivanna, Ravichandran; Iosifidis, Agathaggelos; Butt, Hans-Jürgen; Floudas, George; Narayan, K S; Keivanidis, Panagiotis E

    2015-11-11

    Perylene diimide (PDI)-based organic photovoltaic devices can potentially deliver high power conversion efficiency values provided the photon energy absorbed is utilized efficiently in charge transfer (CT) reactions instead of being consumed in nonradiative energy transfer (ET) steps. Hitherto, it remains unclear whether ET or CT primarily drives the photoluminescence (PL) quenching of the PDI excimer state in PDI-based blend films. Here, we affirm the key role of the thermally assisted PDI excimer diffusion and subsequent CT reaction in the process of PDI excimer PL deactivation. For our study we perform PL quenching experiments in the model PDI-based composite made of poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene)-2-6-diyl] (PBDTTT-CT) polymeric donor mixed with the N,N'-bis(1-ethylpropyl)-perylene-3,4,9,10-tetracarboxylic diimide (PDI) acceptor. Despite the strong spectral overlap between the PDI excimer PL emission and UV-vis absorption of PBDTTT-CT, two main observations indicate that no significant ET component operates in the overall PL quenching: the PL intensity of the PDI excimer (i) increases with decreasing temperature and (ii) remains unaffected even in the presence of 10 wt % content of the PBDTTT-CT quencher. Temperature-dependent wide-angle X-ray scattering experiments further indicate that nonradiative resonance ET is highly improbable due to the large size of PDI domains. The dominance of the CT over the ET process is verified by the high performance of devices with an optimum composition of 30:70 PBDTTT-CT:PDI. By adding 0.4 vol % of 1,8-diiodooctane we verify the plasticization of the polymer side chains that balances the charge transport properties of the PBDTTT-CT:PDI composite and results in additional improvement in the device efficiency. The temperature-dependent spectral width of the PDI excimer PL band suggests the presence of energetic disorder in the

  10. Recent progress of obliquely deposited thin films for industrial applications

    Suzuki, Motofumi; Itoh, Tadayoshi; Taga, Yasunori

    1999-06-01

    More than 10 years ago, birefringent films of metal oxides were formed by oblique vapor deposition and investigated with a view of their application to optical retardation plates. The retardation function of the films was explained in terms of the birefringence caused by the characteristic anisotropic nanostructure inside the films. These films are now classified in the genre of the so-called sculptured thin films. However, the birefringent films thus prepared are not yet industrialized even now due to the crucial lack of the durability and the yield of products. In this review paper, we describe the present status of application process of the retardation films to the information systems such as compact disc and digital versatile disc devices with a special emphasis on the uniformity of retardation properties in a large area and the stability of the optical properties of the obliquely deposited thin films. Finally, further challenges for wide application of the obliquely deposited thin films are also discussed.

  11. Graphene-based flexible and stretchable thin film transistors.

    Yan, Chao; Cho, Jeong Ho; Ahn, Jong-Hyun

    2012-08-21

    Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.

  12. Operating method of amorphous thin film semiconductor element

    Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

    1988-05-31

    The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

  13. Stable organic thin-film transistors

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

    2018-01-01

    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  14. Properties of superconducting thin-film microbridges

    Pei, S.S.

    1978-01-01

    This work reports investigations upon the dependences of critical current and current phase relation on the dimensions of a superconducting thin-film microbridge. A model has been developed upon the Volkov's hyperbolic bridges and the Zaitsev's boundary conditions to calculate the spatial variation of the order parameter for given bridge dimensions. The results indicate that the rigid boundary conditions are good approximations to narrow bridges (W much less than L) only. The critical current density of the bridge has been calculated also as a function of the bridge dimensions. It is found that the critical current density of small bridges is enhanced above its mean field critical value due to the proximity effects of the banks. Very good agreement is found between the calculated enhancement of the critical current density and the experimental results. Direct measurements have been made on the current phase relation of indium bridges with width smaller than 0.6 μm. The difficulties due to the extra phase shifts from the series thin film electrodes are overcome by a specially designed double loop configuration which has an extra low effective inductance. It is found that the current phase relation of small bridges (W,L, xi, the results agree with the predictions of rigid boundary calculations as expected by our model

  15. Interaction domains in high performance NdFeB thick films

    Woodcock, Tom; Khlopkov, Kirill; Schultz, Ludwig; Gutfleisch, Oliver [IFW Dresden, IMW, Dresden (Germany); Walther, Arno [Insitut Neel, CNRS-UJF, Grenoble (France); CEA Leti - MINATEC, Grenoble (France); Dempsey, Nora; Givord, Dominique [Insitut Neel, CNRS-UJF, Grenoble (France)

    2009-07-01

    Thick sputtered films (5-300 micron) of NdFeB have excellent hard magnetic properties which make them attractive for applications in micro-electro-mechanical systems (MEMS). A two step process consisting of triode sputtering and high temperature annealing produced films with energy densities approaching those of sintered NdFeB magnets. Magnetic force microscopy (MFM) using hard magnetic tips showed that the films deposited without substrate heating and at 300 C exhibited magnetic domains typical of low anisotropy materials. These films were amorphous in the as-deposited state. The film deposited at 500 C was crystalline and displaid hard magnetic properties. This was reflected in the magnetic microstructure which showed interaction domains typical of highly textured and high magnetic anisotropy materials with a grain size below or equal to the critical single-domain particle limit. With increasing substrate temperature, the domain patterns of the annealed films became coarser, indicating higher degrees of texture.

  16. Optical characteristics of the thin-film scintillator detector

    Muga, L.; Burnsed, D.

    1976-01-01

    A study of the thin-film detector (TFD) was made in which various light guide and scintillator film support configurations were tested for efficiency of light coupling. Masking of selected portions of the photomultiplier (PM) tube face revealed the extent to which emitted light was received at the exposed PM surfaces. By blocking off selected areas of the scintillator film surface from direct view of the PM tube faces, a measure of the light-guiding efficiency of the film and its support could be estimated. The picture that emerges is that, as the light which is initially trapped in the thin film spreads radially outward from the ion entrance/exit point, it is scattered out of the film by minute imperfections. Optimum signals were obtained by a configuration in which the thin scintillator film was supported on a thin rectangular Celluloid frame inserted within a highly polished metal cylindrical sleeve

  17. Polycystalline silicon thin films for electronic applications

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  18. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

    2012-01-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

  19. Optical constants and structural properties of thin gold films

    Yakubovsky, Dmitry I.; Arsenin, Aleksey V.; Stebunov, Yury V.

    2017-01-01

    We report a comprehensive experimental study of optical and electrical properties of thin polycrystalline gold films in a wide range of film thicknesses (from 20 to 200 nm). Our experimental results are supported by theoretical calculations based on the measured morphology of the fabricated gold...... rules for thin-film plasmonic and nanophotonic devices....... films. We demonstrate that the dielectric function of the metal is determined by its structural morphology. Although the fabrication process can be absolutely the same for different films, the dielectric function can strongly depend on the film thickness. Our studies show that the imaginary part...

  20. Toward High-Performance Coatings for Biomedical Devices: Study on Plasma-Deposited Fluorocarbon Films and Ageing in PBS

    Diego Mantovani

    2010-03-01

    Full Text Available High performance coatings tailored to medical devices represent a recognised approach to modulate surface properties. Plasma-deposited fluorocarbon films have been proposed as a potential stent coating. Previous studies have shown promising adhesion properties: the 35 nm-thick film sustained plastic deformation up to 25% such as induced during the clinical implantation. In this study, the compositional and morphological changes of plasma-deposited fluorocarbon films were examined during ageing in a pseudo-physiological medium, a phosphate buffer solution (PBS, by angle-resolved XPS, FT-IR data and AFM images. The evolution of the ageing process is discussed: defluorination and crosslinking yielded an oxidized protective top layer onto the films, which showed further degradation.

  1. Ferroelectric and piezoelectric thin films and their applications for integrated capacitors, piezoelectric ultrasound transducers and piezoelectric switches

    Klee, M; Boots, H; Kumar, B; Heesch, C van; Mauczok, R; Keur, W; Wild, M de; Esch, H van; Roest, A L; Reimann, K; Leuken, L van; Wunnicke, O; Zhao, J; Schmitz, G; Mienkina, M; Mleczko, M; Tiggelman, M

    2010-01-01

    Ferroelectric and piezoelectric thin films are gaining more and more importance for the integration of high performance devices in small modules. High-K 'Integrated Discretes' devices have been developed, which are based on thin film ferroelectric capacitors integrated together with resistors and ESD protection diodes in a small Si-based chip-scale package. Making use of ferroelectric thin films with relative permittivity of 950-1600 and stacking processes of capacitors, extremely high capacitance densities of 20-520 nF/mm 2 , high breakdown voltages up to 140 V and lifetimes of more than 10 years at operating voltages of 5 V and 85 deg. C are achieved. Thin film high-density capacitors play also an important role as tunable capacitors for applications such as tuneable matching circuits for RF sections of mobile phones. The performance of thin film tuneable capacitors at frequencies between 1 MHz and 1 GHz is investigated. Finally thin film piezoelectric ultrasound transducers, processed in Si- related processes, are attractive for medical imaging, since they enable large bandwidth (>100%), high frequency operation and have the potential to integrate electronics. With these piezoelectric thin film ultrasound transducers real time ultrasound images have been realized. Finally, piezoelectric thin films are used to manufacture galvanic MEMS switches. A model for the quasi-static mechanical behaviour is presented and compared with measurements.

  2. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.

    Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

    2018-01-09

    Atomic-layer-deposition (ALD) of In 2 O 3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2 ) as precursors. The In 2 O 3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (E g ) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In 2 O 3 , and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In 2 O 3 thin-film transistors with an Al 2 O 3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm 2 /V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 10 7 . This was ascribed to passivation of oxygen vacancies in the device channel.

  3. Thinning and rupture of a thin liquid film on a heated surface

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  4. Microbridge tests on gallium nitride thin films

    Huang, Hai-You; Li, Zhi-Ying; Lu, Jun-Yong; Wang, Zhi-Jia; Zhang, Tong-Yi; Wang, Chong-Shun; Lau, Kei-May; Chen, Kevin Jing

    2009-01-01

    In this work, we develop further the microbridge testing method by deriving a closed formula of deflection versus load, which is applied at an arbitrary position on the microbridge beam. Testing a single beam at various positions allows us to characterize simultaneouslyYoung's modulus and residual stress of the beam. The developed method was then used to characterize the mechanical properties of GaN thin films on patterned-Si (1 1 1) substrates grown by metal organic chemical vapor deposition (MOCVD). The microbridge samples were fabricated by using the microelectromechanical fabrication technique and tested with a nanoindentation system. Young's modulus and residual stress of the GaN films were determined to be 287 ± 190 GPa and 851 ± 155 MPa, respectively. In addition, alternative measurements of the residual stress, Young's modulus and hardness of the GaN films, were conducted with micro-Raman spectroscopy and the nanoindentation test, yielding the corresponding values of 847 ± 46 MPa, 269.0 ± 7.0 GPa and 17.8 ± 1.1 GPa

  5. Surface microtopography of thin silver films

    Costa, Manuel F. M.; Almeida, Jose B.

    1991-01-01

    The authors present ne applications for the recently developed nori-contact optical inicrotopographer emphasizing the results of topographic inspections of thin silver films edges. These films were produced by sputtering of silver through different masks, using a planar magnetron source. The results show the influence ot the thickness and position of the masks on the topography of the film near its edge. Topographic information is obtained from the horizontal shift incurred by the bright spot on an horizontal surface, which is displaced vertically, when this is illuminated by an oblique collimated laser beam. The laser beam is focused onto the surface into a diffraction limited spot and is made to sweep the surface to be examined.. The horizontal position of the bright spot is continuously imaged onto a light detector array and the information about individual detectors that are activated is used to compute the corresponding horizontal shift on the reference plane. Simple trignometric calculations are used to relate the horizontal shift to the distance between the surface and a reference plane at each sampling point and thus a map of the surface topography can be built.

  6. Controlled nanostructuration of polycrystalline tungsten thin films

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  7. TXRF analysis of trace metals in thin silicon nitride films

    Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

    2000-01-01

    As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

  8. Surfactant induced flows in thin liquid films : an experimental study

    Sinz, D.K.N.

    2012-01-01

    The topic of the experimental work summarized in my thesis is the flow in thin liquid films induced by non-uniformly distributed surfactants. The flow dynamics as a consequence of the deposition of a droplet of an insoluble surfactant onto a thin liquid film covering a solid substrate where

  9. Optimized grid design for thin film solar panels

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid

  10. Dynamics of a spreading thin film with gravitational counterflow ...

    film climbing up on a vertical substrate against gravity shows interesting dynamics ... For the spreading of a thin film several theoretical studies have shown quantitative agree- ..... The two critical values of this param- ... Davis J M, Fischer B J and Troian S M 2003 A general approach to the linear stability of thin spreading.

  11. Plastic response of thin films due to thermal cycling

    Nicola, L.; van der Giessen, E.; Needleman, A.; Ahzi, S; Cherkaoui, M; Khaleel, MA; Zbib, HM; Zikry, MA; Lamatina, B

    2004-01-01

    Discrete dislocation simulations of thin films on semi-infinite substrates under cyclic thermal loading are presented. The thin film is modelled as a two-dimensional single crystal under plane strain conditions. Dislocations of edge character can be generated from initially present sources and glide

  12. Cadmium sulphide thin film for application in gamma radiation ...

    Cadmium Sulphide (CdS) thin film was prepared using pyrolytic spraying technique and then irradiated at varied gamma dosage. The CdS thin film absorption before gamma irradiation was 0.6497. Absorbed doses were computed using standard equation established for an integrating dosimeter. The plot of absorbed dose ...

  13. Electrical properties of epitaxially grown VOx thin films

    Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

    2003-01-01

    High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

  14. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  15. Thin films of metal-organic compounds and metal nanoparticle

    Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications. S Philip Anthony Shatabdi Porel D ... Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which ...

  16. Fabrication and Performance Study of Uniform Thin Film Integrated ...

    The transmission line model of a uniform rectangular thin film R-C-KR structure consisting of a dielectric layer of constant per unit shunt capacitance C sandwiched between two resistive thin films of constant per unit length resistances R and KR has been analysed using the concept of matrix parameter functions. The above ...

  17. Thermal stability of gold-PS nanocomposites thin films

    Low-temperature transmission electron microscopy (TEM) studies were performed on polystyrene (PS, w = 234 K) – Au nanoparticle composite thin films that were annealed up to 350°C under reduced pressure conditions. The composite thin films were prepared by wet chemical approach and the samples were then ...

  18. Thermal properties and stabilities of polymer thin films

    Kanaya, Toshiji; Kawashima, Kazuko; Inoue, Rintaro; Miyazaki, Tsukasa

    2009-01-01

    Recent extensive studies have revealed that polymer thin films showed very interesting but unusual thermal properties and stabilities. In the article we show that X-ray reflectivity and neutron reflectivity are very powerful tools to study the anomalous properties of polymer thin films. (author)

  19. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  20. Density functional study of ferromagnetism in alkali metal thin films

    thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

  1. NbN thin films for superconducting radio frequency cavities

    Roach, W. M.; Skuza, J. R.; Beringer, D. B.; Li, Z.; Clavero, C.; Lukaszew, R. A.

    2012-12-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m-1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed.

  2. NbN thin films for superconducting radio frequency cavities

    Roach, W M; Clavero, C; Lukaszew, R A; Skuza, J R; Beringer, D B; Li, Z

    2012-01-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m −1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed. (paper)

  3. Magnetic damping phenomena in ferromagnetic thin-films and multilayers

    Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

    2017-11-01

    Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

  4. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  5. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  6. Nanocoatings and ultra-thin films technologies and applications

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  7. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  8. Room temperature ferroelectricity in continuous croconic acid thin films

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  9. Room temperature deposition of magnetite thin films on organic substrate

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  10. Thin Films for Advanced Glazing Applications

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  11. Modifying thin film diamond for electronic applications

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  12. High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

    Zawada, Tomasz; Hansen, Karsten; Lou-Moeller, Rasmus

    2010-01-01

    and are transformed by the energy harvesting micro-generator into usable electrical signal. The micro-generator comprises a silicon cantilever with integrated InSensor® TF2100 PZT thick film deposited using screen-printing. The output power versus frequency and electrical load has been investigated. Furthermore......, devices based on modified, pressure treated thick film materials have been tested and compared with the commercial InSensor® TF2100 PZT thick films. It has been found that the structures based on the pressure treated materials exhibit superior properties in terms of energy output....

  13. Evaluation of residual stress in sputtered tantalum thin-film

    Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

    2016-05-15

    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  14. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Zhouling Wang

    2014-01-01

    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  15. Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

    Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

    2008-07-01

    Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

  16. In vitro behaviour of nanocrystalline silver-sputtered thin films

    Piedade, A P; Vieira, M T; Martins, A; Silva, F

    2007-01-01

    Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications

  17. Tuning electro-optic susceptibity via strain engineering in artificial PZT multilayer films for high-performance broadband modulator

    Zhu, Minmin; Du, Zehui; Li, Hongling; Chen, Bensong; Jing, Lin; Tay, Roland Ying Jie; Lin, Jinjun; Tsang, Siu Hon; Teo, Edwin Hang Tong

    2017-12-01

    A series of Pb(Zr1-xTix)O3 multilayer films alternatively stacked by Pb(Zr0.52Ti0.48)O3 and Pb(Zr0.35Ti0.65)O3 layers have been deposited on corning glass by magnetron sputtering. The films demonstrate pure perovskite structure and good crystallinity. A large tetragonality (c/a) of ∼1.061 and a shift of ∼0.08 eV for optical bandgap were investigated at layer engineered films. In addition, these samples exhibited a wild tunable electro-optic behavior from tens to ∼250.2 pm/V, as well as fast switching time of down to a few microseconds. The giant EO coefficient was attribute the strain-polarization coupling effect and also comparable to that of epitaxial (001) single crystal PZT thin films. The combination of high transparency, large EO effect, fast switching time, and huge phase transition temperature in PZT-based thin films show the potential on electro-optics from laser to information telecommunication.

  18. Novel photon management for thin-film photovoltaics

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  19. Altering properties of cerium oxide thin films by Rh doping

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

    2015-01-01

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

  20. A flexible graphene/multiwalled carbon nanotube film as a high performance electrode material for supercapacitors

    Xiangjun, Lu [College of Material Science and Engineering, Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016, Jiangsu (China); Dou Hui, E-mail: dh_msc@nuaa.edu.cn [College of Material Science and Engineering, Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016, Jiangsu (China); Bo, Gao [College of Material Science and Engineering, Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016, Jiangsu (China); Changzhou, Yuan [School of Materials Science and Engineering, Anhui University of Technology, Maanshan 243002 (China); Yang, Sudong; Liang, Hao; Laifa, Shen [College of Material Science and Engineering, Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016, Jiangsu (China); Zhang Xiaogang, E-mail: azhangxg@nuaa.edu.cn [College of Material Science and Engineering, Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016, Jiangsu (China)

    2011-05-30

    Highlights: > A flexible graphene/multiwalled carbon nanotube (GN/MWCNT) film fabricated by flow-directed assembly and hydrazine to reduce. > The MWCNTs in the obtained composite film not only efficiently increase the basal spacing but also bridge the defects for electron transfer between GN sheets. > The freestanding GN/MWCNT film has a potential application in flexible energy storage devices. - Abstract: A flexible graphene/multiwalled carbon nanotube (GN/MWCNT) film has been fabricated by flow-directed assembly from a complex dispersion of graphite oxide (GO) and pristine MWCNTs followed by the use of gas-based hydrazine to reduce the GO into GN sheets. The GN/MWCNT (16 wt.% MWCNTs) film characterized by Fourier transformation infrared spectra, X-ray diffraction and scanning electron microscope has a layered structure with MWCNTs uniformly sandwiched between the GN sheets. The MWCNTs in the obtained composite film not only efficiently increase the basal spacing but also bridge the defects for electron transfer between GN sheets, increasing electrolyte/electrode contact area and facilitating transportation of electrolyte ion and electron into the inner region of electrode. Electrochemical data demonstrate that the GN/MWCNT film possesses a specific capacitance of 265 F g{sup -1} at 0.1 A g{sup -1} and a good rate capability (49% capacity retention at 50 A g{sup -1}), and displays an excellent specific capacitance retention of 97% after 2000 continuous charge/discharge cycles. The results of electrochemical measurements indicate that the freestanding GN/MWCNT film has a potential application in flexible energy storage devices.

  1. A flexible graphene/multiwalled carbon nanotube film as a high performance electrode material for supercapacitors

    Lu Xiangjun; Dou Hui; Gao Bo; Yuan Changzhou; Yang, Sudong; Hao Liang; Shen Laifa; Zhang Xiaogang

    2011-01-01

    Highlights: → A flexible graphene/multiwalled carbon nanotube (GN/MWCNT) film fabricated by flow-directed assembly and hydrazine to reduce. → The MWCNTs in the obtained composite film not only efficiently increase the basal spacing but also bridge the defects for electron transfer between GN sheets. → The freestanding GN/MWCNT film has a potential application in flexible energy storage devices. - Abstract: A flexible graphene/multiwalled carbon nanotube (GN/MWCNT) film has been fabricated by flow-directed assembly from a complex dispersion of graphite oxide (GO) and pristine MWCNTs followed by the use of gas-based hydrazine to reduce the GO into GN sheets. The GN/MWCNT (16 wt.% MWCNTs) film characterized by Fourier transformation infrared spectra, X-ray diffraction and scanning electron microscope has a layered structure with MWCNTs uniformly sandwiched between the GN sheets. The MWCNTs in the obtained composite film not only efficiently increase the basal spacing but also bridge the defects for electron transfer between GN sheets, increasing electrolyte/electrode contact area and facilitating transportation of electrolyte ion and electron into the inner region of electrode. Electrochemical data demonstrate that the GN/MWCNT film possesses a specific capacitance of 265 F g -1 at 0.1 A g -1 and a good rate capability (49% capacity retention at 50 A g -1 ), and displays an excellent specific capacitance retention of 97% after 2000 continuous charge/discharge cycles. The results of electrochemical measurements indicate that the freestanding GN/MWCNT film has a potential application in flexible energy storage devices.

  2. High Performances of Artificial Nacre-Like Graphene Oxide-Carrageenan Bio-Nanocomposite Films.

    Zhu, Wenkun; Chen, Tao; Li, Yi; Lei, Jia; Chen, Xin; Yao, Weitang; Duan, Tao

    2017-05-16

    This study was inspired by the unique multi-scale and multi-level 'brick-and-mortar' (B&M) structure of nacre layers. We prepared the B&M, environmentally-friendly graphene oxide-carrageenan (GO-Car) nanocomposite films using the following steps. A natural polyhydroxy polymer, carrageenan, was absorbed on the surface of monolayer GO nanosheets through hydrogen-bond interactions. Following this, a GO-Car hybridized film was produced through a natural drying process. We conducted structural characterization in addition to analyzing mechanical properties and cytotoxicity of the films. Scanning electron microscope (SEM) and X-ray diffraction (XRD) analyses showed that the nanocomposite films had a similar morphology and structure to nacre. Furthermore, the results from Fourier transform infrared spectroscopy (FT-IR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Thermogravimetric (TG/DTG) were used to explain the GO-Car interaction. Analysis from static mechanical testers showed that GO-Car had enhanced Young's modulus, maximum tensile strength and breaking elongation compared to pure GO. The GO-Car nanocomposite films, containing 5% wt. of Car, was able to reach a tensile strength of 117 MPa. The biocompatibility was demonstrated using a RAW264.7 cell test, with no significant alteration found in cellular morphology and cytotoxicity. The preparation process for GO-Car films is simple and requires little time, with GO-Car films also having favorable biocompatibility and mechanical properties. These advantages make GO-Car nanocomposite films promising materials in replacing traditional petroleum-based plastics and tissue engineering-oriented support materials.

  3. Interaction domains in high-performance NdFeB thick films

    Woodcock, T.G. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)], E-mail: t.woodcock@ifw-dresden.de; Khlopkov, K. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany); Walther, A. [Insitut Neel, CNRS-UJF, 25 avenue de Martyrs, 38042 Grenoble (France); CEA Leti - MINATEC, 17 rue des Martyrs, 38054 Grenoble (France); Dempsey, N.M.; Givord, D. [Insitut Neel, CNRS-UJF, 25 avenue de Martyrs, 38042 Grenoble (France); Schultz, L.; Gutfleisch, O. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)

    2009-05-15

    The magnetic domain structure in sputtered NdFeB thick films has been imaged by magnetic force microscopy. The local texture of the films was investigated by electron backscatter diffraction. The average misorientation of the grains was shown to decrease with increasing substrate temperature during deposition. Interaction domains were observed and are discussed with reference (i) to the sample grain size compared to the single domain particle size and (ii) to sample texture.

  4. High Performances of Artificial Nacre-Like Graphene Oxide-Carrageenan Bio-Nanocomposite Films

    Wenkun Zhu

    2017-05-01

    Full Text Available This study was inspired by the unique multi-scale and multi-level ‘brick-and-mortar’ (B&M structure of nacre layers. We prepared the B&M, environmentally-friendly graphene oxide-carrageenan (GO-Car nanocomposite films using the following steps. A natural polyhydroxy polymer, carrageenan, was absorbed on the surface of monolayer GO nanosheets through hydrogen-bond interactions. Following this, a GO-Car hybridized film was produced through a natural drying process. We conducted structural characterization in addition to analyzing mechanical properties and cytotoxicity of the films. Scanning electron microscope (SEM and X-ray diffraction (XRD analyses showed that the nanocomposite films had a similar morphology and structure to nacre. Furthermore, the results from Fourier transform infrared spectroscopy (FT-IR, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS and Thermogravimetric (TG/DTG were used to explain the GO-Car interaction. Analysis from static mechanical testers showed that GO-Car had enhanced Young’s modulus, maximum tensile strength and breaking elongation compared to pure GO. The GO-Car nanocomposite films, containing 5% wt. of Car, was able to reach a tensile strength of 117 MPa. The biocompatibility was demonstrated using a RAW264.7 cell test, with no significant alteration found in cellular morphology and cytotoxicity. The preparation process for GO-Car films is simple and requires little time, with GO-Car films also having favorable biocompatibility and mechanical properties. These advantages make GO-Car nanocomposite films promising materials in replacing traditional petroleum-based plastics and tissue engineering-oriented support materials.

  5. Free-standing 3D graphene/polyaniline composite film electrodes for high-performance supercapacitors

    Wang, Shiyong; Ma, Li; Gan, Mengyu; Fu, Shenna; Dai, Wenqin; Zhou, Tao; Sun, Xiaowu; Wang, Huihui; Wang, Huining

    2015-12-01

    The research paper describes polyaniline (PANI) nanowires array on flexible polystyrene microsphere/reduced graphene (PS/rGN) film is synthesized by dilute polymerization, and then the PS microspheres are removed to form free-standing three-dimensional (3D) rGN/PANI composite film. The chemical and structural properties of the 3D rGN/PANI film are characterized by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Brunauer-Emmett-Teller (BET), and the results confirm the 3D rGN/PANI film is synthesized successfully. When the film is used as a supercapacitor electrode, the maximum specific capacitance is as high as 740 F g-1 (or 581 F cm-3 for volumetric capacitance) at a current density of 0.5 A g-1 and the specific capacitance retains 87% of the initial after constant charge-discharge 1000 cycles at current density of 10 A g-1. It is believed that the free-standing 3D rGN/PANI film will have a great potential for application in supercapacitors.

  6. Pulsed laser deposition and characterisation of thin superconducting films

    Morone, A [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  7. Thin film coatings for space electrical power system applications

    Gulino, Daniel A.

    1988-01-01

    This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

  8. Preparation and optical characterization of DNA-riboflavin thin films

    Paulson, Bjorn; Shin, Inchul; Kong, Byungjoo; Sauer, Gregor; Dugasani, Sreekantha Reddy; Khazaeinezhad, Reza; Jung, Woohyun; Joo, Boram; Oh, Kyunghwan

    2016-09-01

    Thin films of DNA biopolymer thin film are fabricated by a drop casting process on glass and silicon substrates, as well as freestanding. The refractive index is measured by elliposmetry and in bulk DNA film the refractive index is shown to be increased in the 600 to 900 nm DNA transparency window by doping with riboflavin. Further analysis with FT-IR, Raman, and XRD are used to determine whether binding between riboflavin and DNA occurs.

  9. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  10. Simple turbulence measurements with azopolymer thin films.

    Barillé, Regis; Pérez, Darío G; Morille, Yohann; Zielińska, Sonia; Ortyl, Ewelina

    2013-04-01

    A simple method to measure the influence on the laser beam propagation by a turbid medium is proposed. This measurement is based on the inscription of a surface relief grating (SRG) on an azopolymer thin film. The grating obtained with a single laser beam after propagation into a turbulent medium is perturbed and directly analyzed by a CCD camera through its diffraction pattern. Later, by scanning the surface pattern with an atomic force microscope, the inscribed SRG is analyzed with the Radon transform. This method has the advantage of using a single beam to remotely inscribe a grating detecting perturbations during the beam path. A method to evaluate the refractive index constant structure is developed.

  11. Thin film femtosecond laser damage competition

    Stolz, Christopher J.; Ristau, Detlev; Turowski, Marcus; Blaschke, Holger

    2009-10-01

    In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

  12. PZT thin film actuated elastic fin micromotor.

    Dubois, M A; Muralt, P

    1998-01-01

    A piezoelectric elastic fin micromotor based on a PbZr(0.53 )Ti(0.47)O(3) thin film driving a micromachined silicon membrane was fabricated and studied. The stator was characterized by interferometry, and a laser set-up was used to measure the angular velocity and acceleration of the motor. The torque, the output power, and the efficiency of the device were extracted from these measurements. Values up to 1020 rpm and 0.94 microNm were observed for the velocity and the torque, respectively, which would be sufficient for a wristwatch application. The present version exhibited an efficiency of 0.17%, which could theoretically be increased to 4.8%

  13. Quantitative MFM on superconducting thin films

    Stopfel, Henry; Vock, Silvia; Shapoval, Tetyana; Neu, Volker; Wolff, Ulrike; Haindl, Silvia; Engelmann, Jan; Schaefer, Rudolf; Holzapfel, Bernhard; Schultz, Ludwig [IFW Dresden, Institute for Metallic Material (Germany); Inosov, Dmytro S. [Max Planck Institute for Solid State Research, Stuttgart (Germany)

    2012-07-01

    Quantitative interpretation of magnetic force microscopy (MFM) data is a challenge, because the measured signal is a convolution between the magnetization of the tip and the stray field emanated by the sample. It was established theoretically that the field distribution just above the surface of the superconductor can be well approximated by the stray field of a magnetic monopole. The description of the MFM tip, however, needs a second approximation. The temperature-dependent vortex-distribution images on a NbN thin film were fitted using two different tip models. Firstly, the magnetic tip was assumed to be a monopole that leads to the simple monopole-monopole model for the tip-sample interaction force. Performing a 2D fitting of the data with this model, we extracted λ, Δ and the vortex pinning force. Secondly, a geometrical model was applied to calculate the tip-transfer-function of the MFM tip using the numerical BEM method.

  14. Multiferroics and magnetoelectrics: thin films and nanostructures

    Martin, L W; Crane, S P; Chu, Y-H; Holcomb, M B; Gajek, M; Huijben, M; Yang, C-H; Balke, N; Ramesh, R [Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)], E-mail: lwmartin@lbl.gov

    2008-10-29

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities-such as electrical control of ferromagnetism at room temperature-researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  15. Multiferroics and magnetoelectrics: thin films and nanostructures

    Martin, L. W.; Crane, S. P.; Chu, Y.-H.; Holcomb, M. B.; Gajek, M.; Huijben, M.; Yang, C.-H.; Balke, N.; Ramesh, R.

    2008-10-01

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities—such as electrical control of ferromagnetism at room temperature—researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  16. Multiferroics and magnetoelectrics: thin films and nanostructures

    Martin, L W; Crane, S P; Chu, Y-H; Holcomb, M B; Gajek, M; Huijben, M; Yang, C-H; Balke, N; Ramesh, R

    2008-01-01

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities-such as electrical control of ferromagnetism at room temperature-researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  17. Fluctuation conductivity of thin superconductive vanadium films

    Dmitrenko, I.M.; Sidorenko, A.S.; Fogel, N.Y.

    1982-01-01

    Resistive transitions into the superconductive state are studied in thin [d >T/sub c/ the experimental data on the excess conductivity of the films agree qualitatively and quantitively with Aslamazov--Larkin theory. There is no Maki--Thompson contribution to fluctuation conductivity. Near T/sub c/ the excess conductivity sigma' changes exponentially with temperature in accordance with the predictions of the theory of the critical fluctuations of the order parameter. The values of the effective charge carrier mass defined from data on sigma' for the low fluctuation and critical fluctuation regions differ markedly. This difference is within the spread of effective masses for various charge carrier groups already known for vanadium. Causes of the difference in resistive behavior for the regions T >T/sub c/ are considered

  18. The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

    Harris Odum, Nicole Latrice

    Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.

  19. HIGH PERFORMANCE THIN LAYER CHROMATOGRAPHIC DETERMINATION OF CAFFEIC ACID AND ROSMARINIC ACID FROM THE LEAVES OF Orthosiphon stamineus

    M. Amzad Hossain

    2010-06-01

    Full Text Available This paper presents the studies performed on extraction of Orthosiphon stamineus, Benth by using different solvent for the identification and quantification of the caffeic acid derivatives such as caffeic acid  and rosmarinic acid which confers to the leaves of this plant with remarkable pharmaceutical properties. High performance thin-layer chromatographic (HPTLC allows the identification and the quantification of more than 20 samples in the same chromatographic run. The analysis of the samples requires 15-30 min compared with more than 2 h using a typical HPLC method. Using the techniques of the HPTLC and the UV-VIS spectra we have found that the extraction of this herb plant contain, the caffeic acid and rosmarinic acid ranging between 0.029% up to 0.506% and up to 0.24% to 2.24% respectively.     Keywords: Caffice acid derivatives, quantification, Malaysian Orthosiphon stamineus, HPTLC

  20. Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

    Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)

    2017-08-01

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.

  1. Method development for Lawsone estimation in Trichup herbal hair powder by high-performance thin layer chromatography

    Maunang M Patel

    2013-01-01

    Full Text Available A simple, specific, accurate, precise and robust high-performance thin-layer chromatographic method has been developed and validated for estimation of Lawsone in Trichup herbal hair powder (coded as a THHP, polyherbal formulation. The chromatographic development was carried out on aluminum plates pre-coated with silica gel 60F 254 and good resolution was achieved with Toluene: Ethyl acetate: Glacial acetic acid (8:1:1 v/v/v as mobile phase. Lawsone detection was carried out densitometrically at 277 nm and obtained retardation factor value was 0.46 ± 0.02. The method was validated with respect to specificity, linearity, accuracy, precision and robustness. The calibration curve was achieved to be linear over a range of 5-60 μg/ml and regression coefficient was obtained 0.998. Accuracy of chromatographic method was evaluated by standard addition method; recovery was obtained 99.25 ± 0.61% . The peak purity of Lawsone was achieved 0.999 r. Relative standard deviation for intraday and inter-day precision was 0.37-0.56% and 0.42-0.55%, respectively. The limit of detection and limit of quantification of the Lawsone were found to be 1.08 μg/m land 3.28 μg/ml, respectively. This result shows that the method was well validated. In the present study, the Lawsone content was found 0.322 ± 0.014% in THHP. This study reveals that the proposed high performance thin layer chromatography method is accurate, fast and cost- effective for routine estimation of Lawsone in polyherbal formulation.

  2. Fluorine doped vanadium dioxide thin films for smart windows

    Kiri, Pragna; Warwick, Michael E.A.; Ridley, Ian; Binions, Russell

    2011-01-01

    Thermochromic fluorine doped thin films of vanadium dioxide were deposited from the aerosol assisted chemical vapour deposition reaction of vanadyl acetylacetonate, ethanol and trifluoroacetic acid on glass substrates. The films were characterised with scanning electron microscopy, variable temperature Raman spectroscopy and variable temperature UV/Vis spectroscopy. The incorporation of fluorine in the films led to an increase in the visible transmittance of the films whilst retaining the thermochromic properties. This approach shows promise for improving the aesthetic properties of vanadium dioxide thin films.

  3. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  4. Glass transition and thermal expansivity of polystyrene thin films

    Inoue, R.; Kanaya, T.; Miyazaki, T.; Nishida, K.; Tsukushi, I.; Shibata, K.

    2006-01-01

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T g and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements

  5. Glass transition and thermal expansivity of polystyrene thin films

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  6. Thin film characterization by resonantly excited internal standing waves

    Di Fonzio, S [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  7. Thin Film Approaches to the SRF Cavity Problem: Fabrication and Characterization of Superconducting Thin Films

    Beringer, Douglas B.

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory's CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency - 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m - there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (approximately 45 MV/m for Niobium) where inevitable thermodynamic breakdown occurs. With state of the art niobium based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio-frequency applications.

  8. Thin-film growth and the shadow instability

    Karunasiri, R.P.U.; Bruinsma, R.; Rudnick, J.

    1989-01-01

    We propose a growth model for deposition of thin amorphous films by the sputtering technique. For small values of the diffusion constant, the film develops a self-similar mountain landscape. As the diffusion constant is increased a regime is reached where growth of compact flat films is possible up to a critical height. Further deposition leads to surface roughening

  9. Inhomogeneous strain states in sputter deposited tungsten thin films

    Noyan, I.C.; Shaw, T.M.; Goldsmith, C.C.

    1997-01-01

    The results of an x-ray diffraction study of dc-magnetron sputtered tungsten thin films are reported. It is shown that the phase transformation from the β to α W can cause multilayered single-phase films where the layers have very different stress states even if the films are in the 500 nm thickness range. copyright 1997 American Institute of Physics

  10. Strain-induced properties of epitaxial VOx thin films

    Rata, AD; Hibma, T

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

  11. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  12. Effect-directed analysis via hyphenated high-performance thin-layer chromatography for bioanalytical profiling of sunflower leaves.

    Móricz, Ágnes M; Ott, Péter G; Yüce, Imanuel; Darcsi, András; Béni, Szabolcs; Morlock, Gertrud E

    2018-01-19

    High-performance thin-layer chromatography (HPTLC) coupled with effect-directed analysis was used for non-targeted screening of sunflower leaf extract for components exhibiting antioxidant, antibacterial and/or cholinesterase enzyme inhibitory effects. The active compounds were characterized by HPTLC-electrospray ionization-high resolution mass spectrometry (ESI-HRMS) and HPTLC-Direct Analysis in Real Time (DART)-MS/MS. The latter ambient ionization technique (less soft than ESI) resulted in oxidation and fragmentation products and characteristic fragment ions. NMR spectroscopy after targeted isolation via preparative normal phase flash chromatography and semi-preparative reversed phase high-performance liquid chromatography supported the identification of two diterpenes to be (-)-kaur-16-en-19-oic acid and 15-α-angeloyloxy-ent-kaur-16-en-19-oic acid. Both compounds found to be multi-potent as they inhibited acetylcholinesterase and butyrylcholinesterase and showed antibacterial effects against Gram-positive Bacillus subtilis and Gram-negative Aliivibrio fischeri bacteria. Kaurenoic acid was also active against the Gram-negative pepper pathogenic Xanthomonas euvesicatoria bacteria. Copyright © 2017 Elsevier B.V. All rights reserved.

  13. Photoinduced conductivity in tin dioxide thin films

    Muraoka, Y.; Takubo, N.; Hiroi, Z.

    2009-01-01

    The effects of ultraviolet light irradiation on the conducting properties of SnO 2-x thin films grown epitaxially on TiO 2 or Al 2 O 3 single-crystal substrates are studied at room temperature. A large increase in conductivity by two to four orders of magnitude is observed with light irradiation in an inert atmosphere and remains after the light is removed. The high-conducting state reverts to the original low-conducting state by exposing it to oxygen gas. These reversible phenomena are ascribed to the desorption and adsorption of negatively charged oxygen species at the grain boundaries, which critically change the mobility of electron carriers already present inside grains by changing the potential barrier height at the grain boundary. The UV light irradiation provides us with an easy and useful route to achieve a high-conducting state even at low carrier density in transparent conducting oxides and also to draw an invisible conducting wire or a specific pattern on an insulating film.

  14. Electrodeposition of thin Pd-Ag films

    Hasler, P.; Allmendinger, T.

    1993-01-01

    Thin Pd-Ag layers were electroplated preferably on brass and on nickel substrates using a two-compartment cell separated by an anion exchange membrane. The weakly alkaline electrolyte contained glycine-glycinate as the major complexing agents. The plating experiments were usually carried out without stirring, at different potentials and temperatures and in the absence or in the presence of sodium benzaldehyde-2,4-disulphonate (BDS). The samples were characterized by scanning electron microscopy and light microscopy. Their compositions were determined analytically by the inductively coupled plasma technique. In addition, the film porosity was tested. Electrodeposition in almost limiting current conditions for both components and without simultaneous hydrogen evolution led to deposits with compositions being in good agreement with the molar metal ratio in the electrolyte (77:23). The best results were achieved between 0 and -50 mV with respect to a reversible hydrogen electrode at 0 C in the presence of BDS. These deposits were bright, had good adherence and exhibited no pores at a film thickness of 1.2 μm. At too negative potentials, the deposits became black and powdery. (orig.)

  15. Mechanics of evolving thin film structures

    Liang, Jim

    In the Stranski-Krastanov system, the lattice mismatch between the film and the substrate causes the film to break into islands. During annealing, both the surface energy and the elastic energy drive the islands to coarsen. Motivated by several related studies, we suggest that stable islands should form when a stiff ceiling is placed at a small gap above the film. We show that the role of elasticity is reversed: with the ceiling, the total elastic energy stored in the system increases as the islands coarsen laterally. Consequently, the islands select an equilibrium size to minimize the combined elastic energy and surface energy. In lithographically-induced self-assembly, when a two-phase fluid confined between parallel substrates is subjected to an electric field, one phase can self-assemble into a triangular lattice of islands in another phase. We describe a theory of the stability of the island lattice. The islands select the equilibrium diameter to minimize the combined interface energy and electrostatic energy. Furthermore, we study compressed SiGe thin film islands fabricated on a glass layer, which itself lies on a silicon wafer. Upon annealing, the glass flows, and the islands relax. A small island relaxes by in-plane expansion. A large island, however, wrinkles at the center before the in-plane relaxation arrives. The wrinkles may cause significant tensile stress in the island, leading to fracture. We model the island by the von Karman plate theory and the glass layer by the Reynolds lubrication theory. Numerical simulations evolve the in-plane expansion and the wrinkles simultaneously. We determine the critical island size, below which in-plane expansion prevails over wrinkling. Finally, in devices that integrate dissimilar materials in small dimensions, crack extension in one material often accompanies inelastic deformation in another. We analyze a channel crack advancing in an elastic film under tension, while an underlayer creeps. We use a two

  16. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  17. A high-performance, flexible and robust metal nanotrough-embedded transparent conducting film for wearable touch screen panels

    Im, Hyeon-Gyun; An, Byeong Wan; Jin, Jungho; Jang, Junho; Park, Young-Geun; Park, Jang-Ung; Bae, Byeong-Soo

    2016-02-01

    We report a high-performance, flexible and robust metal nanotrough-embedded transparent conducting hybrid film (metal nanotrough-GFRHybrimer). Using an electro-spun polymer nanofiber web as a template and vacuum-deposited gold as a conductor, a junction resistance-free continuous metal nanotrough network is formed. Subsequently, the metal nanotrough is embedded on the surface of a glass-fabric reinforced composite substrate (GFRHybrimer). The monolithic composite structure of our transparent conducting film allows simultaneously high thermal stability (24 h at 250 °C in air), a smooth surface topography (Rrms touch screen panel (TSP) is fabricated using the transparent conducting films. The flexible TSP device stably operates on the back of a human hand and on a wristband.We report a high-performance, flexible and robust metal nanotrough-embedded transparent conducting hybrid film (metal nanotrough-GFRHybrimer). Using an electro-spun polymer nanofiber web as a template and vacuum-deposited gold as a conductor, a junction resistance-free continuous metal nanotrough network is formed. Subsequently, the metal nanotrough is embedded on the surface of a glass-fabric reinforced composite substrate (GFRHybrimer). The monolithic composite structure of our transparent conducting film allows simultaneously high thermal stability (24 h at 250 °C in air), a smooth surface topography (Rrms touch screen panel (TSP) is fabricated using the transparent conducting films. The flexible TSP device stably operates on the back of a human hand and on a wristband. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07657a

  18. Synthesis of ultra-thin tellurium nanoflakes on textiles for high-performance flexible and wearable nanogenerators

    He, Wen; Van Ngoc, Huynh; Qian, Yong Teng; Hwang, Jae Seok; Yan, Ya Ping [Department of Physics and Interdisciplinary Course of Physics and Chemistry, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do (Korea, Republic of); Choi, Hongsoo [Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 711-873, Daegu (Korea, Republic of); Kang, Dae Joon, E-mail: djkang@skku.edu [Department of Physics and Interdisciplinary Course of Physics and Chemistry, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do (Korea, Republic of)

    2017-01-15

    Highlights: • Ultra-thin tellurium (Te) nanoflakes were successfully grown on textile and used as an active piezoelectric material. • Te nanoflake nanogenerator device was systematically studied by bending and compressing test. • The ultra-high output power during compressing test can light up 10 LEDs without any external power source. • The device can offer a breakthrough in applying tellurium nanoflakes into high-performance flexible and wearable piezoelectric nanogenerator. - Abstract: We report that ultra-thin tellurium (Te) nanoflakes were successfully grown on a sample of a gold-coated textile, which then was used as an active piezoelectric material. An output voltage of 4 V and a current of 300 nA were obtained from the bending test under a driving frequency of 10 Hz. To test the practical applications, Te nanoflake nanogenerator (TFNG) device was attached to the subject’s arm, and mechanical energy was converted to electrical energy by means of periodic arm-bending motions. The optimized open-circuit voltage and short-circuit current density of approximately 125 V and 17 μA/cm{sup 2}, respectively, were observed when a TFNG device underwent a compression test with a compressive force of 8 N and driving frequency of 10 Hz. This high-power generation enabled the instantaneous powering of 10 green light-emitting diodes that shone without any assistance from an external power source.

  19. High-Performance Thin-Layer Chromatographic Quantification of Rosmarinic Acid and Rutin in Abnormal Savda Munziq

    S. G. Tian

    2013-01-01

    Full Text Available A high-performance thin-layer chromatographic (HPTLC method has been established for simultaneous analysis of rosmarinic acid and rutin in Abnormal Savda Munziq (ASMq. A methanol extract of ASMq was used for quantification. The compounds were separated on silica gel H thin layer plate with ethyl acetate-formic acid-acetic acid-water 15 : 1 : 1 : 1.5 (v/v as a developer, trichloroethanol as the color reagent. The plates were scanned at 365 nm. The linear calibration data of rosmarinic acid and rutin were in the range of 0.0508 to 0.2540 μg (r=0.9964, 0.2707 to 1.35354 μg (r=0.9981, respectively. The recovery rate of rosmarinic acid was 99.17% (RSD = 2.92% and rutin was 95.24% (RSD = 2.38%. The method enables rapid screening, precise, selective, and sensitive quantification for pharmaceutical analysis.

  20. Electrochemical behavior of high performance on-chip porous carbon films for micro-supercapacitors applications in organic electrolytes

    Brousse, K.; Huang, P.; Pinaud, S.; Respaud, M.; Daffos, B.; Chaudret, B.; Lethien, C.; Taberna, P. L.; Simon, P.

    2016-10-01

    Carbide derived carbons (CDCs) are promising materials for preparing integrated micro-supercapacitors, as on-chip CDC films are prepared via a process fully compatible with current silicon-based device technology. These films show good adherence on the substrate and high capacitance thanks to their unique nanoporous structure which can be fine-tuned by adjusting the synthesis parameters during chlorination of the metallic carbide precursor. The carbon porosity is mostly related to the synthesis temperature whereas the thickness of the films depends on the chlorination duration. Increasing the pore size allows the adsorption of large solvated ions from organic electrolytes and leads to higher energy densities. Here, we investigated the electrochemical behavior and performance of on-chip TiC-CDC in ionic liquid solvent mixtures of 1-ethyl-3-methylimidazolium tetrafluoroborate (EMIBF4) diluted in either acetonitrile or propylene carbonate via cyclic voltammetry and electrochemical impedance spectroscopy. Thin CDC films exhibited typical capacitive signature and achieved 169 F cm-3 in both electrolytes; 65% of the capacitance was still delivered at 1 V s-1. While increasing the thickness of the films, EMI+ transport limitation was observed in more viscous PC-based electrolyte. Nevertheless, the energy density reached 90 μW h cm-2 in 2M EMIBF4/ACN, confirming the interest of these CDC films for micro-supercapacitors applications.

  1. Thermoelectric effects of amorphous Ga-Sn-O thin film

    Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

    2017-07-01

    The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

  2. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    Oba, Tatsuya; Vacha, Martin

    2012-01-01

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films

  3. Resistivity of thiol-modified gold thin films

    Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

    2014-01-01

    In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography

  4. Effect of solution concentration on MEH-PPV thin films

    Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

  5. Resistivity of thiol-modified gold thin films

    Correa-Puerta, Jonathan [Instituto de Física, Pontificia Universidad Católica de Valparaíso, Av. Universidad 330, Curauma, Valparaíso (Chile); Del Campo, Valeria [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Henríquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Häberle, Patricio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)

    2014-11-03

    In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography.

  6. Valence control of cobalt oxide thin films by annealing atmosphere

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  7. Ultra-thin solution-based coating of molybdenum oxide on multiwall carbon nanotubes for high-performance supercapacitor electrodes

    Shakir, Imran

    2014-02-01

    Uniform and conformal coating of ultrathin molybdenum oxide (MoO 3) thin film onto conducting MWCNTs was successfully synthesized through a facile, nontoxic and generally applicable precipitation method, followed by a simple heat treatment. The ultrathin MoO3 coating enables a fast and reversible redox reaction which improves the specific capacitance by utilizing the maximum number of active sites for the redox reaction, while the high porosity of the MWCNTs facilitates ion migration in the electrolyte and shorten the ion diffusion path. The ultrathin MoO3 coated MWCNTs electrodes show a very high specific capacitance of 1145 Fg -1 in 2 M Na2SO4 aqueous solution when 5 nm thick MoO3 was considered alone despite the low weight percentage of the MoO3 (16wt%). Furthermore, the ultrathin MoO3 coated MWCNTs supercapacitor electrodes exhibited excellent cycling performance of > 97% capacitance retention over 1000 cycles. © 2013 Elsevier Ltd.

  8. Laser nanostructuring of ZnO thin films

    Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

    2016-06-30

    Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

  9. Oxidation of ruthenium thin films using atomic oxygen

    McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

    2015-12-31

    In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

  10. Molecular simulation of freestanding amorphous nickel thin films

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  11. Multifunctional Parylene-C Microfibrous Thin Films

    Chindam, Chandraprakash

    Towards sustainable development, multifunctional products have many advantageous over single-function products: reduction in number of parts, raw material, assembly time, and cost involved in a product's life cycle. My goal for this thesis was to demonstrate the multifunctionalities of Parylene-C microfibrous thin films. To achieve this goal, I chose Parylene C, a polymer, because the fabrication of periodic mediums of Parylene C in the form of microfibrous thin films (muFTFs) was already established. A muFTFs is a parallel arrangement of identical micrometer-sized fibers of shapes cylindrical, chevronic, or helical. Furthermore, Parylene C had three existing functions: in medical-device industries as corrosion-resistive coatings, in electronic industries as electrically insulating coatings, and in biomedical research for tissue-culture substrates. As the functionalities of a material are dependent on the microstructure and physical properties, the investigation made for this thesis was two-fold: (1) Experimentally, I determined the wetting, mechanical, and dielectric properties of columnar muFTFs and examined the microstructural and molecular differences between bulk films and muFTFs. (2) Using physical properties of bulk film, I computationally determined the elastodynamic and determined the electromagnetic filtering capabilities of Parylene-C muFTFs. Several columnar muFTFs of Parylene C were fabricated by varying the monomer deposition angle. Following are the significant experimental findings: 1. Molecular and microstructural characteristics: The dependence of the microfiber inclination angle on the monomer deposition angle was classified into four regimes of two different types. X-ray diffraction experiments indicated that the columnar muFTFs contain three crystal planes not evident in bulk Parylene-C films and that the columnar muFTFs are less crystalline than bulk films. Infrared absorbance spectra revealed that the atomic bonding is the same in all

  12. Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

    Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.

  13. Development of neutron diffuse scattering analysis code by thin film and multilayer film

    Soyama, Kazuhiko

    2004-01-01

    To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

  14. Buckling of Thin Films in Nano-Scale

    Li L.A.

    2010-06-01

    Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  15. Stability of tetraphenyl butadiene thin films in liquid xenon

    Sanguino, P.; Balau, F.; Botelho do Rego, A.M.; Pereira, A.; Chepel, V.

    2016-01-01

    Tetraphenyl butadiene (TPB) is widely used in particle detectors as a wavelength shifter. In this work we studied the stability of TPB thin films when immersed in liquid xenon (LXe). The thin films were deposited on glass and quartz substrates by thermal evaporation. Morphological and chemical surface properties were monitored before and after immersion into LXe by scanning electron microscopy and X-ray photoelectron spectroscopy. No appreciable changes have been detected with these two methods. Grain size and surface chemical composition were found to be identical before and after submersion into LXe. However, the film thickness, measured via optical transmission in the ultraviolet–visible wavelength regions, decreased by 1.6 μg/cm 2 (24%) after immersion in LXe during 20 h. These results suggest the necessity of using a protective thin film over the Tetraphenyl butadiene when used as a wavelength shifter in LXe particle detectors. - Highlights: • Stability of tetraphenyl butadiene (TPB) thin films immersed in liquid xenon (LXe). • Thermally evaporated TPB thin films were immersed in LXe for 20 h. • Film morphology and chemical surface properties remained unchanged. • Surface density of the films decreased by 1.6 μg/cm 2 (24%) after immersion in LXe. • For using in LXe particle detectors, TPB films should be protected with a coating.

  16. Modification of thin film properties by ion bombardment during deposition

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  17. Electrochromic properties of nanocrystalline MoO3 thin films

    Hsu, C.-S.; Chan, C.-C.; Huang, H.-T.; Peng, C.-H.; Hsu, W.-C.

    2008-01-01

    Electrochromic MoO 3 thin films were prepared by a sol-gel spin-coating technique. The spin-coated films were initially amorphous; they were calcined, producing nanocrystalline MoO 3 thin films. The effects of annealing temperatures ranging from 100 o C to 500 o C were investigated. The electrochemical and electrochromic properties of the films were measured by cyclic voltammetry and by in-situ optical transmittance techniques in 1 M LiClO 4 /propylene carbonate electrolyte. Experimental results showed that the transmittance of MoO 3 thin films heat-treated at 350 o C varied from 80% to 35% at λ = 550 nm (ΔT = ∼ 45%) and from 86% to 21% at λ ≥ 700 nm (ΔT = ∼ 65%) after coloration. Films heat-treated at 350 deg. C exhibited the best electrochromic properties in the present study

  18. Residual stress in spin-cast polyurethane thin films

    Zhang, Hong; Zhang, Li, E-mail: lizhang@mae.cuhk.edu.hk [Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China); Chow Yuk Ho Technology Centre for Innovative Medicine, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China)

    2015-01-19

    Residual stress is inevitable during spin-casting. Herein, we report a straightforward method to evaluate the residual stress in as-cast polyurethane thin films using area shrinkage measurement of films in floating state, which shows that the residual stress is independent of radial location on the substrate and decreased with decreasing film thickness below a critical value. We demonstrate that the residual stress is developed due to the solvent evaporation after vitrification during spin-casting and the polymer chains in thin films may undergo vitrification at an increased concentration. The buildup of residual stress in spin-cast polymer films provides an insight into the size effects on the nature of polymer thin films.

  19. Copper zinc tin sulfide-based thin film solar cells

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  20. Optical modeling and simulation of thin-film photovoltaic devices

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  1. The state of the art of thin-film photovoltaics

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  2. Thin film circuits for future applications. Pt. 2. Evaporation technique

    Haug, G; Houska, K H; Schmidt, H J; Sprengel, H P; Wohak, K

    1976-06-01

    Investigations of thin film diffusion processes and reactions with encapsulation materials resulted in improved long term stability of evaporated NiCr resistors, SiO capacitors and NiCr/Au conductors for thin film circuits. Stable NiCr resistor networks can be formed on ceramic substrates, and SiO capacitors of good quality can be deposited on the new very smooth ceramic substrates. The knowledge of the influence of evaporation parameters make the production of SiO capacitors with definite properties and good reproducibility possible. The range of capacitance of tantalum thin film circuits can be extended by integration with evaporated SiO capacitors.

  3. XRay Study of Transfer Printed Pentacene Thin Films

    Shao, Y.; Solin, S. A.; Hines, D. R.; Williams, E. D.

    2007-01-01

    We investigated the structural properties and transfer properties of pentacene thin films fabricated by thermal deposition and transfer printing onto SiO2 and plastic substrates, respectively. The dependence of the crystallite size on the printing time, temperature and pressure were measured. The increases of crystalline size were observed when pentacene thin films were printed under specific conditions, e.g. 120 deg. C and 600 psi and can be correlated with the improvement of the field effect mobility of pentacene thin-film transistors

  4. Optical properties of CeO 2 thin films

    Cerium oxide (CeO2) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10-6 Torr. The thickness of CeO2 films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly ...

  5. Principles of electron backscattering by solids and thin films

    Niedrig, H.

    1977-01-01

    The parameters concerning the electron backscattering from thin films and solids (atomic scattering cross-section, atomic number, single/multiple scattering, film thickness of self-supporting films and of surface films on bulk substrates, scattering angular distribution, angle of incidence, diffraction effects) are described. Their influence on some important contrast mechanisms in scanning electron microscopy (thickness contrast, Z/material contrast, tilting/topography contrast, orientation contrast) is discussed. The main backscattering electron detection systems are briefly described. (orig.) [de

  6. Dewetting of thin polymer film on rough substrate: II. Experiment

    Volodin, Pylyp; Kondyurin, Alexey

    2008-01-01

    The theory of the dewetting process developed for a model of substrate-film interaction forces was examined by an experimental investigation of the dewetting process of thin polystyrene (PS) films on chemically etched silicon substrates. In the dependence on PS films thickness and silicon roughness, various situations of dewetting were observed as follows: (i) if the wavelength of the substrate roughness is much larger than the critical spinodal wavelength of a film, then spinodal dewetting of the film is observed; (ii) if the wavelength of the substrate roughness is smaller than the critical wavelength of the film and the substrate roughness is larger in comparison with film thickness, then the dewetting due to substrate roughness is observed and the dewetted film patterns repeat the rough substrate structure; (iii) if the wavelength of the substrate roughness is smaller than the critical wavelength of the film and the substrate roughness is small in comparison with the film thickness, then spinodal dewetting proceeds

  7. Ideal glass transitions in thin films: An energy landscape perspective

    Truskett, Thomas M.; Ganesan, Venkat

    2003-07-01

    We introduce a mean-field model for the potential energy landscape of a thin fluid film confined between parallel substrates. The model predicts how the number of accessible basins on the energy landscape and, consequently, the film's ideal glass transition temperature depend on bulk pressure, film thickness, and the strength of the fluid-fluid and fluid-substrate interactions. The predictions are in qualitative agreement with the experimental trends for the kinetic glass transition temperature of thin films, suggesting the utility of landscape-based approaches for studying the behavior of confined fluids.

  8. Strain Relaxation and Vacancy Creation in Thin Platinum Films

    Gruber, W.; Chakravarty, S.; Schmidt, H.; Baehtz, C.; Leitenberger, W.; Bruns, M.; Kobler, A.; Kuebel, C.

    2011-01-01

    Synchrotron based combined in situ x-ray diffractometry and reflectometry is used to investigate the role of vacancies for the relaxation of residual stress in thin metallic Pt films. From the experimentally determined relative changes of the lattice parameter a and of the film thickness L the modification of vacancy concentration and residual strain was derived as a function of annealing time at 130 deg. C. The results indicate that relaxation of strain resulting from compressive stress is accompanied by the creation of vacancies at the free film surface. This proves experimentally the postulated dominant role of vacancies for stress relaxation in thin metal films close to room temperature.

  9. Soft Magnetic Multilayered Thin Films for HF Applications

    Loizos, George; Giannopoulos, George; Serletis, Christos; Maity, Tuhin; Roy, Saibal; Lupu, Nicoleta; Kijima, Hanae; Yamaguchi, Masahiro; Niarchos, Dimitris

    Multilayered thin films from various soft magnetic materials were successfully prepared by magnetron sputtering in Ar atmosphere. The magnetic properties and microstructure were investigated. It is found that the films show good soft magnetic properties: magnetic coercivity of 1-10 Oe and saturation magnetization higher than 1T. The initial permeability of the films is greater than 300 and flattens up to 600 MHz. The multilayer thin film properties in combination with their easy, fast and reproducible fabrication indicate that they are potential candidates for high frequency applications.

  10. Microwave Josephson generation in thin film superconducting bridges

    Gubankov, V.N.; Koshelets, V.P.; Ovsyannikov, G.A.

    1975-01-01

    Thin-film bridges have some advantage over other types of superconducting weak links: good definition of electromagnetic parameters and of weak region geometry. Up to now Josephson properties of bridges have been investigated by using indirect methods (the effect of magnetic field on the critical current I 0 , the bridge behavior in a microwave field, etc.). Direct experimental observation of Josephson radiation from autonomous thin film bridges is reported. Microwave radiation in tin bridges of 'variable' thickness has been investigated where the thickness of the film forming the bridge is far less than the thickness of the bank films. (Auth.)

  11. Photoinduced hydrophobic surface of graphene oxide thin films

    Zhang Xiaoyan; Song Peng; Cui Xiaoli

    2012-01-01

    Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

  12. Tools to synthesize the learning of thin films

    Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.

  13. Thin Films for X-ray Optics

    Conley, Raymond

    Focusing x-rays with refraction requires an entire array of lens instead of a single element, each contributing a minute amount of focusing to the system. In contrast to their visible light counterparts, diffractive optics require a certain depth along the optical axis in order to provide sufficient phase shift. Mirrors reflect only at very shallow angles. In order to increase the angle of incidence, contribution from constructive interference within many layers needs to be collected. This requires a multilayer coating. Thin films have become a central ingredient for many x-ray optics due to the ease of which material composition and thickness can be controlled. Chapter 1 starts with a short introduction and survey of the field of x-ray optics. This begins with an explanation of reflective multilayers. Focusing optics are presented next, including mirrors, zone plates, refractive lenses, and multilayer Laue lens (MLL). The strengths and weaknesses of each "species" of optic are briefly discussed, alongside fabrication issues and the ultimate performance for each. Practical considerations on the use of thin-films for x-ray optics fabrication span a wide array of topics including material systems selection and instrumentation design. Sputter deposition is utilized exclusively for the work included herein because this method of thin-film deposition allows a wide array of deposition parameters to be controlled. This chapter also includes a short description of two deposition systems I have designed. Chapter 2 covers a small sampling of some of my work on reflective multilayers, and outlines two of the deposition systems I have designed and built at the Advanced Photon Source. A three-stripe double multilayer monochromator is presented as a case study in order to detail specifications, fabrication, and performance of this prolific breed of x-ray optics. The APS Rotary Deposition System was the first deposition system in the world designed specifically for multilayer

  14. Characterization of E 471 food emulsifiers by high-performance thin-layer chromatography-fluorescence detection.

    Oellig, Claudia; Brändle, Klara; Schwack, Wolfgang

    2018-07-13

    Mono- and diacylglycerol (MAG and DAG) emulsifiers, also known as food additive E 471, are widely used to adjust techno-functional properties in various foods. Besides MAGs and DAGs, E 471 emulsifiers additionally comprise different amounts of triacylglycerols (TAGs) and free fatty acids (FFAs). MAGs, DAGs, TAGs and FFAs are generally determined by high-performance liquid chromatography (HPLC) or gas chromatography (GC) coupled to mass selective detection, analyzing the individual representatives of the lipid classes. In this work we present a rapid and sensitive method for the determination of MAGs, DAGs, TAGs and FFAs in E 471 emulsifiers by high-performance thin-layer chromatography with fluorescence detection (HPTLC-FLD), including a response factor system for quantitation. Samples were simply dissolved and diluted with t-butyl methyl ether before a two-fold development was performed on primuline pre-impregnated LiChrospher silica gel plates with diethyl ether and n-pentane/n-hexane/diethyl ether (52:20:28, v/v/v) as the mobile phases to 18 and 75 mm, respectively. For quantitation, the plate was scanned in the fluorescence mode at UV 366/>400 nm, when the cumulative signal for each lipid class was used. Calibration was done with 1,2-distearin and amounts of lipid classes were calculated with response factors and expressed as monostearin, distearin, tristearin and stearic acid. Limits of detection and quantitation were 1 and 4 ng/zone, respectively, for 1,2-distearin. Thus, the HPTLC-FLD approach represents a simple, rapid and convenient screening alternative to HPLC and GC analysis of the individual compounds. Visual detection additionally enables an easy characterization and the direct comparison of emulsifiers through the lipid class pattern, when utilized as a fingerprint. Copyright © 2018 Elsevier B.V. All rights reserved.

  15. Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

    Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

    2010-08-15

    In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.

  16. ITO thin films deposited by advanced pulsed laser deposition

    Viespe, Cristian; Nicolae, Ionut; Sima, Cornelia; Grigoriu, Constantin; Medianu, Rares

    2007-01-01

    Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 deg. C), pressure (1-6 x 10 -2 Torr), laser fluence (1-4 J/cm 2 ) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 deg. C on a large area (5 x 5 cm 2 ). The films have electrical resistivity of 8 x 10 -4 Ω cm at RT, 5 x 10 -4 Ω cm at 180 deg. C and an optical transmission in the visible range, around 89%

  17. Broadband back grating design for thin film solar cells

    Janjua, Bilal; Jabbour, Ghassan E.

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  18. Laser-Printed Organic Thin-Film Transistors

    Diemer, Peter J.; Harper, Angela F.; Niazi, Muhammad Rizwan; Petty, Anthony J.; Anthony, John E.; Amassian, Aram; Jurchescu, Oana D.

    2017-01-01

    their incorporation in large-scale manufacturing processes. Here, the first ever organic thin-film transistor fabricated with an electrophotographic laser printing process using a standard office laser printer is reported. This completely solvent-free additive

  19. Preparation of Nb thin films with bulk transition temperatures

    Peirce, L H [Florida State Univ., Tallahassee (USA). Dept. of Physics

    1984-08-01

    Thin films (1000-2000 A) of Nb were prepared with bulk transition temperatures (9.25 K) by evaporation from an electron gun. Necessary substrate temperatures, evaporation rates and H/sub 2/O pressures were determined.

  20. A Variational approach to thin film hydrodynamics of binary mixtures

    Xu, Xinpeng; Thiele, Uwe; Qian, Tiezheng

    2015-01-01

    In order to model the dynamics of thin films of mixtures, solutions, and suspensions, a thermodynamically consistent formulation is needed such that various coexisting dissipative processes with cross couplings can be correctly described

  1. Chemical solution deposition of functional oxide thin films

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  2. Mechanism of spontaneous hole formation in thin polymeric films

    Yu, Kaijia; Rasmussen, Henrik K.; Román Marín, José Manuel

    2012-01-01

    We show computationally that (molten) thin polymeric film containing nonequilibrium configurations originating from a solvent evaporation may develop holes spontaneously in the molten state, and that they appear delayed. Polymers above the glass transition temperature are liquids where the flow...

  3. Simple gun for vapor deposition of organic thin films

    Sato, N.; Seki, K.; Inokuchi, H.

    1987-01-01

    A simple evaporation gun for preparing organic thin films was fabricated using commercially available parts of an electron gun for a TV Braun tube. The device permits sample heating to be easily controlled because of the small heat capacity

  4. Multiferroic iron oxide thin films at room temperature

    Gich, M.; Fina, I.; Morelli, Alessio; Sánchez, F.; Alexe, M.; Gazquez, J.; Fontcuberta, J.; Roig, A.

    2014-01-01

    Roč. 26, č. 27 (2014), s. 4645-4652 ISSN 0935-9648 Institutional support: RVO:68378271 Keywords : multiferroic * iron oxide * thin film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 17.493, year: 2014

  5. Bandtail characteristics in InN thin films

    Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.

    2002-01-01

    The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers

  6. A thin film hydroponic system for plant studies

    Hines, Robert; Prince, Ralph; Muller, Eldon; Schuerger, Andrew

    1990-01-01

    The Land Pavillion, EPCOT Center, houses a hydroponic, thin film growing system identical to that residing in NASA's Biomass Production Chamber at Kennedy Space Center. The system is targeted for plant disease and nutrition studies. The system is described.

  7. Phonon transport across nano-scale curved thin films

    Mansoor, Saad B.; Yilbas, Bekir S., E-mail: bsyilbas@kfupm.edu.sa

    2016-12-15

    Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

  8. Phonon transport across nano-scale curved thin films

    Mansoor, Saad B.; Yilbas, Bekir S.

    2016-01-01

    Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

  9. A monolithic functional film of nanotubes/cellulose/ionic liquid for high performance supercapacitors

    Basiricò, Lucia; Lanzara, Giulia

    2014-12-01

    A novel monolithic, pre-fabricated, fully functional film made of a nanostructured free-standing layer is presented for a new and competitive class of easy-to-assemble flexible supercapacitors whose design is in-between the all solid state and the traditional liquid electrolyte. The film is made of two vertically aligned multi-walled carbon nanotube (VANT) electrodes that store ions, embedded-in, and monolithically interspaced by a solution of microcrystalline cellulose in a room temperature ionic liquid (RTIL) electrolyte (1-ethyl-3-methylimidazolium acetate-EMIM Ac). The fine tuning of VANTs length and electrolyte/cellulose amount leads, in a sole and continuous block, to ions storage and physical separation between the electrodes without the need of the additional separator layer that is typically used in supercapacitors. Thus, physical discontinuities that can induce disturbances to ions mobility, are fully eliminated significantly reducing the equivalent series resistance and increasing the knee frequency, hence outclassing the best supercapacitors based on VANTs and non-aqueous electrolytes. The excellent electrochemical response can also be addressed to the chosen electrolyte that, not only has the advantage of leading to a significantly simpler and more affordable fabrication procedure, but has higher ionic conductivity, lower viscosity and higher ions mobility than other electrolytes capable of dissolving cellulose.

  10. Inverse bilayer magnetoelectric thin film sensor

    Yarar, E.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Chair for Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany); Salzer, S.; Höft, M.; Knöchel, R. [Microwave Laboratory, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Chair for Synthesis and Real Structure, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)

    2016-07-11

    Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.

  11. Degradation analysis of thin film photovoltaic modules

    Radue, C.; Dyk, E.E. van

    2009-01-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P MAX ) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 ∼30% and a total degradation of ∼42%. For Si-2 the initial P MAX was 7.93 W, with initial light-induced degradation of ∼10% and a total degradation of ∼17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  12. Degradation analysis of thin film photovoltaic modules

    Radue, C., E-mail: chantelle.radue@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P{sub MAX}) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 approx30% and a total degradation of approx42%. For Si-2 the initial P{sub MAX} was 7.93 W, with initial light-induced degradation of approx10% and a total degradation of approx17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  13. Product reliability and thin-film photovoltaics

    Gaston, Ryan; Feist, Rebekah; Yeung, Simon; Hus, Mike; Bernius, Mark; Langlois, Marc; Bury, Scott; Granata, Jennifer; Quintana, Michael; Carlson, Carl; Sarakakis, Georgios; Ogden, Douglas; Mettas, Adamantios

    2009-08-01

    Despite significant growth in photovoltaics (PV) over the last few years, only approximately 1.07 billion kWhr of electricity is estimated to have been generated from PV in the US during 2008, or 0.27% of total electrical generation. PV market penetration is set for a paradigm shift, as fluctuating hydrocarbon prices and an acknowledgement of the environmental impacts associated with their use, combined with breakthrough new PV technologies, such as thin-film and BIPV, are driving the cost of energy generated with PV to parity or cost advantage versus more traditional forms of energy generation. In addition to reaching cost parity with grid supplied power, a key to the long-term success of PV as a viable energy alternative is the reliability of systems in the field. New technologies may or may not have the same failure modes as previous technologies. Reliability testing and product lifetime issues continue to be one of the key bottlenecks in the rapid commercialization of PV technologies today. In this paper, we highlight the critical need for moving away from relying on traditional qualification and safety tests as a measure of reliability and focus instead on designing for reliability and its integration into the product development process. A drive towards quantitative predictive accelerated testing is emphasized and an industrial collaboration model addressing reliability challenges is proposed.

  14. Magnetostatic excitations in thin ferrite films

    Zil'berman, P.E.; Lugovskoi, A.V.

    1987-01-01

    The authors discuss the influence of the exchange interaction and dissipative processes in thin ferrite films on the eigenfrequency spectrum of magnetostatic standing waves and on the dispersion relation and attenuation of magnetostatic traveling waves. For the first time they obtain explicitly the dispersion relation for magnetostatic waves (MSWs) in a tangential saturating magnetic field H 0 to second order (inclusive) in the exchange interaction parameter λ. The authors obtain computer solutions for this equation in the complex frequency (ω) plane (for standing waves) or wave-number (q) plane (for traveling waves). The authors show that the dispersion relation constructed from the standing-wave spectrum is different from that of the traveling waves if λ≠0, even if dissipation is neglected. The traveling waves have auxiliary branches of the dispersion relation with weak damping near the spin-wave-resonance (SWR) frequencies. Dissipation has only a relatively weak effect on the frequency spectrum of the standing waves, shifting it upward. For the traveling waves, however, dissipation leads to qualitative changes in the structure of the dispersion relation, giving rise to new branches, forbidden bands, reentrant and anomalous-dispersion regions

  15. Thin film deposition using rarefied gas jet

    Pradhan, Sahadev, , Dr.

    2017-06-01

    The rarefied gas jet of aluminium is studied at Mach number Ma = (Uj /√{ kbTj / mg }) in the range .01 PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, H is the characteristic dimension, U_j and T_j are the jet velocity and temperature, n_d is the number density of the jet, m and d are the molecular mass and diameter, and kbis the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn=0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number, which allows scattering collisions to rapidly direct the atoms to the substrate.

  16. Nanopolar reorientation in ferroelectric thin films

    Hubert, C.; Levy, J.; Rivkin, T. V.; Carlson, C.; Parilla, P. A.; Perkins, J. D.; Ginley, D. S.

    2001-01-01

    The influence of varying oxygen pressure P(O 2 ) during the growth of Ba 0.4 Sr 0.6 TiO 3 thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O 2 ). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (P c =85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O 2 )=P c

  17. Trends and new applications in thin films

    1996-01-01

    The proceedings of this symposium comprise 95 communications from which 64 were selected and fall into the scope of INIS subject categories, and 1 was selected for ETDE indexing. The selected communications deal with the techniques used for thin films preparation using chemical or physical vapor deposition techniques (plasma-arc or jet spraying, cathode sputtering, reactive DC or RF magnetron sputtering, plasma-ion deposition, ion implantation, electron or ion beam spraying, ion beam assisted plasma etching, dynamic ion mixing, distributed electron cyclotron resonance plasma sputtering, laser induced plasma sputtering etc..). The effects and interactions with the substrates (ion implantation, crystal growth, crystal-phase transformations, microstructures, penetration depth, changes in lattice parameters etc..) are analysed using various techniques such as grazing incidence X-ray diffraction, X-ray reflectometry, X-ray and angle resolved electron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectroscopy, SEM, TEM, IR absorption spectroscopy, UV or visible emission spectroscopy, conversion electron Moessbauer spectroscopy, X-ray fluorescence, mass spectroscopy, optical ellipsometry etc.. Mechanical tests such as scratch, microhardness and wear tests are also performed on the coatings to analyse their mechanical properties. (J.S.)

  18. Lasing in liquid crystal thin films

    Palto, S. P. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)], E-mail: palto@online.ru

    2006-09-15

    A lasing condition is formulated in matrix form for optically anisotropic thin films. Lasing behavior of liquid-crystal slabs is analyzed. In particular, it is shown that if the spatial extent of a liquid crystal slab is much larger than its thickness, then laser emission is feasible not only along the normal to the slab, but also in the entire angular sector. The generated laser light can be observed experimentally as a spot or as concentric rings on a screen. The lowest lasing threshold corresponds to in-plane sliding modes leaking into the substrate. The feedback required for lasing is provided by reflection from the interfaces, rather than edges, of the liquid-crystal slab operating as a planar Fabry-Perot cavity. For cholesteric liquid crystals, it is shown that energy loss to the sliding modes leaking into the substrates and escaping through their edges is a key factor that limits the efficiency of band-edge emission along the normal to the slab.

  19. Silicon Thin-Film Solar Cells

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  20. Nanostructured refractory thin films for solar applications

    Ollier, E.; Dunoyer, N.; Dellea, O.; Szambolics, H.

    2014-08-01

    Selective solar absorbers are key elements of all solar thermal systems. Solar thermal panels and Concentrated Solar Power (CSP) systems aim respectively at producing heat and electricity. In both cases, a surface receives the solar radiation and is designed to have the highest optical absorption (lowest optical reflectivity) of the solar radiation in the visible wavelength range where the solar intensity is the highest. It also has a low emissivity in the infrared (IR) range in order to avoid radiative thermal losses. Current solutions in the state of the art usually consist in deposited interferential thin films or in cermets [1]. Structured surfaces have been proposed and have been simulated because they are supposed to be more efficient when the solar radiation is not normal to the receiving surface and because they could potentially be fabricated with refractory materials able to sustain high operating temperatures. This work presents a new method to fabricate micro/nanostructured surfaces on molybdenum (refractory metal with a melting temperature of 2623°C). This method now allows obtaining a refractory selective surface with an excellent optical selectivity and a very high absorption in the visible range. This high absorption performance was obtained by achieving a double structuration at micro and nano scales thanks to an innovative process flow.